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Sample records for cmos current sources

  1. A tunable CMOS constant current source

    NASA Technical Reports Server (NTRS)

    Thelen, D.

    1991-01-01

    A constant current source has been designed which makes use of on chip electrically erasable memory to adjust the magnitude and temperature coefficient of the output current. The current source includes a voltage reference based on the difference between enhancement and depletion transistor threshold voltages. Accuracy is +/- 3% over the full range of power supply, process variations, and temperature using eight bits for tuning.

  2. Current-mode CMOS hybrid image sensor

    NASA Astrophysics Data System (ADS)

    Benyhesan, Mohammad Kassim

    Digital imaging is growing rapidly making Complimentary Metal-Oxide-Semi conductor (CMOS) image sensor-based cameras indispensable in many modern life devices like cell phones, surveillance devices, personal computers, and tablets. For various purposes wireless portable image systems are widely deployed in many indoor and outdoor places such as hospitals, urban areas, streets, highways, forests, mountains, and towers. However, the increased demand on high-resolution image sensors and improved processing features is expected to increase the power consumption of the CMOS sensor-based camera systems. Increased power consumption translates into a reduced battery life-time. The increased power consumption might not be a problem if there is access to a nearby charging station. On the other hand, the problem arises if the image sensor is located in widely spread areas, unfavorable to human intervention, and difficult to reach. Given the limitation of energy sources available for wireless CMOS image sensor, an energy harvesting technique presents a viable solution to extend the sensor life-time. Energy can be harvested from the sun light or the artificial light surrounding the sensor itself. In this thesis, we propose a current-mode CMOS hybrid image sensor capable of energy harvesting and image capture. The proposed sensor is based on a hybrid pixel that can be programmed to perform the task of an image sensor and the task of a solar cell to harvest energy. The basic idea is to design a pixel that can be configured to exploit its internal photodiode to perform two functions: image sensing and energy harvesting. As a proof of concept a 40 x 40 array of hybrid pixels has been designed and fabricated in a standard 0.5 microm CMOS process. Measurement results show that up to 39 microW of power can be harvested from the array under 130 Klux condition with an energy efficiency of 220 nJ /pixel /frame. The proposed image sensor is a current-mode image sensor which has several

  3. Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

    2008-01-01

    Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

  4. Noise sources and noise suppression in CMOS imagers

    NASA Astrophysics Data System (ADS)

    Pain, Bedabrata; Cunningham, Thomas J.; Hancock, Bruce R.

    2004-01-01

    Mechanisms for noise coupling in CMOS imagers are complex, since unlike a CCD, a CMOS imager has to be considered as a full digital-system-on-a-chip, with a highly sensitive front-end. In this paper, we analyze the noise sources in a photodiode CMOS imager, and model their propagation through the signal chain to determine the nature and magnitude of noise coupling. We present methods for reduction of noise, and present measured data to show their viability. For temporal read noise reduction, we present pixel signal chain design techniques to achieve near 2 electrons read noise. We model the front-end reset noise both for conventional photodiode and CTIA type of pixels. For the suppression of reset noise, we present a column feedback-reset method to reduce reset noise below 6 electrons. For spatial noise reduction, we present the design of column signal chain that suppresses both spatial noise and power supply coupling noise. We conclude by identifying problems in low-noise design caused by dark current spatial distribution.

  5. A new architecture of current-mode CMOS TDI Sensor

    NASA Astrophysics Data System (ADS)

    Ji, Cheng; Chen, Yongping

    2015-10-01

    Nowadays, CMOS sensors still suffer from the problem of low SNR, especially in the stage of low illumination and high relative scanning velocity. Lots of methods have been develop to overcome this problem. Among these researches, TDI (Time Delay Integration) architecture is a more natural choice, which is natively supported by CCD sensors. In this paper a new kind of proposed current-mode sensor is used to achieve TDI operation in analog domain. The circuit is composed of three main parts. At first, a current-type pixel is proposed, in which the active MOSFET is operated in the triode region to ensure the output current is linearly dependent on the gate voltage and avoid the reduction of threshold voltage in the traditional voltage mode pixels, such as 3T, 4T which use the source followers as its active part. Then a discrete double sampling (DDS) unit, which is operated in the form of currents is used to efficiently reduce the fixed pattern noise (FPN) and make the output is independent of reset voltage of pixels. For accumulation, an improved current mirror adder under controlled of timing circuits is proposed to overcome the problem of saturation suffered in voltage domain. Some main noise sources, especially come from analog sample and holds capacitors and switches is analyzed. Finally, simulation results with CSMC 0.5um technology and Cadence IC show that the proposed method is reasonable and efficient to improve the SNR.

  6. A 3.2-GHz fully integrated low-phase noise CMOS VCO with self-biasing current source for the IEEE 802.11a/hiperLAN WLAN standard

    NASA Astrophysics Data System (ADS)

    Quemada, C.; Adin, I.; Bistue, G.; Berenguer, R.; Mendizabal, J.

    2005-06-01

    A 3.3V, fully integrated 3.2-GHz voltage-controlled oscillator (VCO) is designed in a 0.18μm CMOS technology for the IEE 802.11a/HiperLAN WLAN standard for the UNII band from 5.15 to 5.35 GHz. The VCO is tunable between 2.85 GHz and 3.31 GHz. NMOS architecture with self-biasing current of the tank source is chosen. A startup circuit has been employed to avoid zero initial current. Current variation is lower than 1% for voltage supply variations of 10%. The use of a self-biasing current source in the tank provides a greater safety in the transconductance value and allows running along more extreme point operation The designed VCO displays a phase noise and output power of -98dBc/Hz (at 100 KHz offset frequency) and 0dBm respectively. This phase noise has been obtained with inductors of 2.2nH and quality factor of 12 at 3.2 GHz, and P-N junction varactors whose quality factor is estimated to exceed 40 at 3.2 GHz. These passive components have been fabricated, measured and modeled previously. The core of the VCO consumes 33mW DC power.

  7. A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies

    NASA Astrophysics Data System (ADS)

    Schmitz, A.; Tielert, R.

    2005-05-01

    Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate. To maintain the high switching performance, the threshold voltage must be scaled according with the supply voltage. However, this leads to an increased subthreshold current of the transistors in standby mode (VGS=0). Another source of leakage is gate current, which becomes significant for gate oxides of 3nm and below. We propose a Self-Biasing Virtual Rails (SBVR) - CMOS technique which acts like an adaptive local supply voltage in case of standby mode. Most important sources of leakage currents are reduced by this technique. Moreover, SBVR-CMOS is capable of conserving stored information in sleep mode, which is vital for memory circuits. Memories are exposed to radiation causing soft errors. This well-known problem becomes even worse in standby mode of typical SRAMs, that have low driving performance to withstand alpha particle hits. In this paper, a 16-transistor SRAM cell is proposed, which combines the advantage of extremely low leakage currents with a very high soft error stability.

  8. A compact picosecond pulsed laser source using a fully integrated CMOS driver circuit

    NASA Astrophysics Data System (ADS)

    He, Yuting; Li, Yuhua; Yadid-Pecht, Orly

    2016-03-01

    Picosecond pulsed laser source have applications in areas such as optical communications, biomedical imaging and supercontinuum generation. Direct modulation of a laser diode with ultrashort current pulses offers a compact and efficient approach to generate picosecond laser pulses. A fully integrated complementary metaloxide- semiconductor (CMOS) driver circuit is designed and applied to operate a 4 GHz distributed feedback laser (DFB). The CMOS driver circuit combines sub-circuits including a voltage-controlled ring oscillator, a voltagecontrolled delay line, an exclusive-or (XOR) circuit and a current source circuit. Ultrashort current pulses are generated by the XOR circuit when the delayed square wave is XOR'ed with the original square wave from the on-chip oscillator. Circuit post-layout simulation shows that output current pulses injected into an equivalent circuit load of the laser have a pulse full width at half maximum (FWHM) of 200 ps, a peak current of 80 mA and a repetition rate of 5.8 MHz. This driver circuit is designed in a 0.13 μm CMOS process and taped out on a 0.3 mm2 chip area. This CMOS chip is packaged and interconnected with the laser diode on a printed circuit board (PCB). The optical output waveform from the laser source is captured by a 5 GHz bandwidth photodiode and an 8 GHz bandwidth oscilloscope. Measured results show that the proposed laser source can output light pulses with a pulse FWHM of 151 ps, a peak power of 6.4 mW (55 mA laser peak forward current) and a repetition rate of 5.3 MHz.

  9. Novel source follower transistor structure without lightly doped drain for high performance CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Song, Hyeong-Sub; Kwon, Sung-Kyu; Jeon, So-Ra; Oh, Dong-Jun; Lee, Ga-Won; Lee, Hi-Deok

    2016-08-01

    To realize high-resolution pixels in the CMOS image sensor, it is necessary to reduce low-frequency noise, particularly random telegraph signal (RTS) noise of the source-follower transistor (SFT). To achieve less relative variation of drain noise current, ΔI D/I D, a metal-oxide-semiconductor field-effect transistor structure without the lightly doped drain (LDD) for the SFT transistor is proposed. Then, a comparison of RTS noise characteristics between the proposed SFT structure without LDD and the conventional SFT structure with LDD was conducted. Although the RTS noise occurrence probability of the proposed SFT structure without LDD is somewhat greater than that of the conventional SFT structure with LDD, the amplitude of relative variation of drain noise current of the proposed SFT structure is significantly less than that of the conventional SFT. Despite changes in several factors in the proposed SFT, such as effective channel length, trap depth profile in gate oxide, and random dopant fluctuation (RDF), it is believed that the change of trap depth profile is a primary factor for the improved RTS characteristic. Therefore, the proposed SFT is highly desirable for the high-resolution CMOS image sensor.

  10. Novel source follower transistor structure without lightly doped drain for high performance CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Song, Hyeong-Sub; Kwon, Sung-Kyu; Jeon, So-Ra; Oh, Dong-Jun; Lee, Ga-Won; Lee, Hi-Deok

    2016-08-01

    To realize high-resolution pixels in the CMOS image sensor, it is necessary to reduce low-frequency noise, particularly random telegraph signal (RTS) noise of the source-follower transistor (SFT). To achieve less relative variation of drain noise current, ΔI D/I D, a metal–oxide–semiconductor field-effect transistor structure without the lightly doped drain (LDD) for the SFT transistor is proposed. Then, a comparison of RTS noise characteristics between the proposed SFT structure without LDD and the conventional SFT structure with LDD was conducted. Although the RTS noise occurrence probability of the proposed SFT structure without LDD is somewhat greater than that of the conventional SFT structure with LDD, the amplitude of relative variation of drain noise current of the proposed SFT structure is significantly less than that of the conventional SFT. Despite changes in several factors in the proposed SFT, such as effective channel length, trap depth profile in gate oxide, and random dopant fluctuation (RDF), it is believed that the change of trap depth profile is a primary factor for the improved RTS characteristic. Therefore, the proposed SFT is highly desirable for the high-resolution CMOS image sensor.

  11. A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

    NASA Astrophysics Data System (ADS)

    Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

    2013-03-01

    Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

  12. CMOS current-mode neural associative memory design with on-chip learning.

    PubMed

    Wu, C Y; Lan, J F

    1996-01-01

    Based on the Grossberg mathematical model called the outstar, a modular neural net with on-chip learning and memory is designed and analyzed. The outstar is the minimal anatomy that can interpret the classical conditioning or associative memory. It can also be served as a general-purpose pattern learning device. To realize the outstar, CMOS (complimentary metal-oxide semiconductor) current-mode analog dividers are developed to implement the special memory called the ratio-type memory. Furthermore, a CMOS current-mode analog multiplier is used to implement the correlation. The implemented CMOS outstar can on-chip store the relative ratio values of the trained weights for a long time. It can also be modularized to construct general neural nets. HSPICE (a circuit simulator of Meta Software, Inc.) simulation results of the CMOS outstar circuits as associative memory and pattern learner have successfully verified their functions. The measured results of the fabricated CMOS outstar circuits have also successfully confirmed the ratio memory and on-chip learning capability of the circuits. Furthermore, it has been shown that the storage time of the ratio memory can be as long as five minutes without refreshment. Also the outstar can enhance the contrast of the stored pattern within a long period. This makes the outstar circuits quite feasible in many applications.

  13. Voltage controlled current source

    DOEpatents

    Casne, Gregory M.

    1992-01-01

    A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

  14. A current-assisted CMOS photonic sampler with two taps for fluorescence lifetime sensing

    NASA Astrophysics Data System (ADS)

    Ingelberts, H.; Kuijk, M.

    2016-04-01

    Imaging based on fluorescence lifetime is becoming increasingly important in medical and biological applications. State-of- the-art fluorescence lifetime microscopes either use bulky and expensive gated image intensifiers coupled to a CCD or single-photon detectors in a slow scanning setup. Numerous attempts are being made to create compact, cost-effective all- CMOS imagers for fluorescence lifetime sensing. Single-photon avalanche diode (SPAD) imagers can have very good timing resolution and noise characteristics but have low detection efficiency. Another approach is to use CMOS imagers based on demodulation detectors. These imagers can be either very fast or very efficient but it remains a challenge to combine both characteristics. Recently we developed the current-assisted photonic sampler (CAPS) to tackle these problems and in this work, we present a new CAPS with two detection taps that can sample a fluorescence decay in two time windows. In the case of mono-exponential decays, two windows provide enough information to resolve the lifetime. We built an electro-optical setup to characterize the detector and use it for fluorescence lifetime measurements. It consists of a supercontinuum pulsed laser source, an optical system to focus light into the detector and picosecond timing electronics. We describe the structure and operation of the two-tap CAPS and provide basic characterization of the speed performance at multiple wavelengths in the visible and near-infrared spectrum. We also record fluorescence decays of different visible and NIR fluorescent dyes and provide different methods to resolve the fluorescence lifetime.

  15. 10-bit segmented current steering DAC in 90nm CMOS technology

    NASA Astrophysics Data System (ADS)

    Bringas, R., Jr.; Dy, F.; Gerasta, O. J.

    2015-06-01

    This special project presents a 10-Bit 1Gs/s 1.2V/3.3V Digital-to-Analog Converter using1 Poly 9 Metal SAED 90-nm CMOS Technology intended for mixed-signal and power IC applications. To achieve maximum performance with minimum area, the DAC has been implemented in 6+4 Segmentation. The simulation results show a static performance of ±0.56 LSB INL and ±0.79 LSB DNL with a total layout chip area of 0.683 mm2.The segmented architecture is implemented using two sub DAC's, which are the LSB and MSB section with certain number bits. The DAC is designed using 4-BitBinary Weighted DAC for the LSB section and 6-BitThermometer-coded DAC for the MSB section. The thermometer-coded architecture provides the most optimized results in terms of linearity through reducing the clock feed-through effect especially in hot switching between multiple transistors. The binary- weighted architecture gives better linearity output in higher frequencies with better saturation in current sources.

  16. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    PubMed

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-01

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications. PMID:22273883

  17. CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

    NASA Astrophysics Data System (ADS)

    Sawadsaringkarn, Y.; Kimura, H.; Maezawa, Y.; Nakajima, A.; Kobayashi, T.; Sasagawa, K.; Noda, T.; Tokuda, T.; Ohta, J.

    2012-03-01

    A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

  18. A High Performance CMOS Current Mirror Circuit with Neuron MOSFETs and a Transimpedance Amplifier

    NASA Astrophysics Data System (ADS)

    Shimizu, Akio; Ishikawa, Yohei; Fukai, Sumio; Aikawa, Masayoshi

    In this paper, we propose a high accuracy current mirror circuit suitable for a low-voltage operation. The proposed circuit has a novel negative feedback that is composed of neuron MOSFETs and a transimpedance amplifier. As a result, the proposed circuit achieves a high accuracy current mirror circuit. At the same time, the proposed circuit monitors an error current by a low voltage because the negative feedback operates in a current-mode. The performance of the proposed circuit is evaluated using HSPICE simulation with On-Semiconductor 1.48μm CMOS device parameters. Simulation results show that the output resistance of the proposed circuit is 5.79[GΩ] and minimum operating range is 0.3[V].

  19. High-power CMOS current driver with accurate transconductance for electrical impedance tomography.

    PubMed

    Constantinou, Loucas; Triantis, Iasonas F; Bayford, Richard; Demosthenous, Andreas

    2014-08-01

    Current drivers are fundamental circuits in bioimpedance measurements including electrical impedance tomography (EIT). In the case of EIT, the current driver is required to have a large output impedance to guarantee high current accuracy over a wide range of load impedance values. This paper presents an integrated current driver which meets these requirements and is capable of delivering large sinusoidal currents to the load. The current driver employs a differential architecture and negative feedback, the latter allowing the output current to be accurately set by the ratio of the input voltage to a resistor value. The circuit was fabricated in a 0.6- μm high-voltage CMOS process technology and its core occupies a silicon area of 0.64 mm (2) . It operates from a ± 9 V power supply and can deliver output currents up to 5 mA p-p. The accuracy of the maximum output current is within 0.41% up to 500 kHz, reducing to 0.47% at 1 MHz with a total harmonic distortion of 0.69%. The output impedance is 665 k Ω at 100 kHz and 372 k Ω at 500 kHz.

  20. Investigations on CMOS photodiodes using scanning electron microscopy with electron beam induced current measurements

    NASA Astrophysics Data System (ADS)

    Kraxner, A.; Roger, F.; Loeffler, B.; Faccinelli, M.; Kirnstoetter, S.; Minixhofer, R.; Hadley, P.

    2014-09-01

    In this work the characterization of CMOS diodes with Electron Beam Induced Current (EBIC) measurements in a Scanning Electron Microscope (SEM) are presented. Three-dimensional Technology Computer Aided Design (TCAD) simulations of the EBIC measurement were performed for the first time to help interpret the experimental results. The TCAD simulations provide direct access to the spatial distribution of physical quantities (like mobility, lifetime etc.) which are very difficult to obtain experimentally. For the calibration of the simulation to the experiments, special designs of vertical p-n diodes were fabricated. These structures were investigated with respect to doping concentration, beam energy, and biasing. A strong influence of the surface preparation on the measurements and the extracted diffusion lengths are shown.

  1. Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems

    DOEpatents

    Welch, James D.

    2003-09-23

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at substantially equal doping levels, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at different doping levels, and containing a single metallurgical doping type, and functional combinations thereof. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents utilizing material(s) which form rectifying junctions with both N and P-type semiconductor whether metallurigically or field induced.

  2. Self-amplified CMOS image sensor using a current-mode readout circuit

    NASA Astrophysics Data System (ADS)

    Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

    2014-05-01

    The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

  3. A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver

    NASA Astrophysics Data System (ADS)

    Jian, Xu; Zheng, Zhou; Yiqiang, Wu; Zhigong, Wang; Jianping, Chen

    2015-05-01

    A passive current switch mixer was designed for the second IF down-conversion in a DRM/DAB receiver. The circuit consists of an input transconductance stage, a passive current switching stage, and a current amplifier stage. The input transconductance stage employs a self-biasing current reusing technique, with a resistor shunt feedback to increase the gain and output impedance. A dynamic bias technique is used in the switching stage to ensure the stability of the overdrive voltage versus the PVT variations. A current shunt feedback is introduced to the conventional low-voltage second-generation fully balanced multi-output current converter (FBMOCCII), which provides very low input impedance and high output impedance. With the circuit working in current mode, the linearity is effectively improved with low supply voltages. Especially, the transimpedance stage can be removed, which simplifies the design considerably. The design is verified with a SMIC 0.18 μm RF CMOS process. The measurement results show that the voltage conversation gain is 1.407 dB, the NF is 16.22 dB, and the IIP3 is 4.5 dBm, respectively. The current consumption is 9.30 mA with a supply voltage of 1.8 V. This exhibits a good compromise among the gain, noise, and linearity for the second IF mixer in DRM/DAB receivers. Project supported by the National Natural Science Foundation of China (No. 61306069), and the National High Technology Research and Development Program of China (No. 2011AA010301).

  4. Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation.

    PubMed

    Tan, Gim Heng; Sidek, Roslina Mohd; Ramiah, Harikrishnan; Chong, Wei Keat; Lioe, De Xing

    2014-01-01

    This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2). PMID:25197694

  5. Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation

    PubMed Central

    Tan, Gim Heng; Sidek, Roslina Mohd; Chong, Wei Keat; Lioe, De Xing

    2014-01-01

    This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2. PMID:25197694

  6. Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS

    NASA Astrophysics Data System (ADS)

    Daoxun, Wu; Lingli, Jiang; Hang, Fan; Jian, Fang; Bo, Zhang

    2013-02-01

    Contrary to general understanding, a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process. Such a phenomenon in a gate-grounded NMOSFET (GGNMOS) was investigated, and the current spreading effect was verified as the predominant factor. Due to transmission line pulse (TLP) measurements and Sentaurus technology computer aided design (TCAD) 2-D numerical simulations, parameters such as current gain, on-resistance and power density were discussed in detail.

  7. A BiCMOS time interval digitizer based on fully-differential, current-steering circuits

    SciTech Connect

    Loinaz, M.J.; Wooley, B.A. . Center for Integrated Systems)

    1994-06-01

    A time interval digitizer cell with a 0--16 ns input range and a nominal LSB width of 1.0 ns has been integrated in a 2-[mu]m BiCMOS technology. The circuit exhibits both integral and differential nonlinearity below 0.15 LSB and a timing error of 0.32 ns RMS. Logic gate propagation delays are used as time measurement units, and the nominal value of the delays is set by an on-chip phase-locked loop (PLL). Fully-differential, current-steering circuits with low voltage swings are used to implement the time interval digitizer so as to generate minimal switching noise. The cell is to be used in the monolithic, multi-channel realization of a high-sensitivity, mixed-signal data acquisition front-end. By virtue of the time digitization architecture used, the average power dissipation of the cell is only 19.8 mW, despite the use of circuits that dissipate static power, and the layout area is a compact 448 [mu]m x 634 [mu]m.

  8. Direct current planar excimer source

    NASA Astrophysics Data System (ADS)

    Zhu, W.; Takano, N.; Schoenbach, K. H.; Guru, D.; McLaren, J.; Heberlein, J.; May, R.; Cooper, J. R.

    2007-07-01

    Excimer emission at 172 nm was observed from xenon discharges generated between a perforated anode, with opening dimensions in the sub-millimetre range, and a planar cathode. A thin dielectric layer 100-250 µm in thickness, with the same size opening as the anode, is aligned with the anode opening and used to separate the electrodes. Devices with this structure are referred to as cathode boundary layer (CBL) discharge or micro-hollow cathode discharge devices, depending on the surface structure of the cathode. The emission intensity and efficiency of these devices are pressure- and current-dependent. Typical power densities and internal efficiencies (ratio of excimer radiant power to electrical input power) are 0.5-1.5 W cm-2 and 3-5%, respectively. In the current range between normal and abnormal mode operation, the CBL discharge shows regularly arranged filaments (self-organization). Optimum emission of the excimer radiation is observed at the transition from the normal glow mode to self-organization. The resistive current-voltage characteristic in the self-organization region allows the operation of multiple CBL devices in parallel without individual ballast, but with an excimer emission slightly off the maximum value. The measured decrease of the excimer emission to about 10% of its initial value after approximately 250 h of continuous operation seems to be caused by the increasing contamination of xenon, through minor leaks in the discharge chamber and/or the outgassing of chamber components. Refilling the chamber with fresh gas after such an extended operation resulted in full recovery of the discharge with respect to excimer emission. The results suggest the possibility of generating extended lifetime, intense, large area, planar excimer sources using CBL discharges in sealed discharge chambers including getters.

  9. Integrated on-chip 0.35 μm BiCMOS current-mode DC-DC buck converter

    NASA Astrophysics Data System (ADS)

    Lee, Chan-Soo; Kim, Nam-Soo; Gendensuren, Munkhsuld; Choi, Jae-Ho; Choi, Joong-Ho

    2012-12-01

    A current-mode DC-DC buck converter with a fully integrated power module is presented in this article. The converter is implemented using BiCMOS technology in amplifier and power MOSFET in a current sensor. The current sensor is realised by the power lateral double-diffused MOSFET with the aspect ratio much larger than that of a matched p-MOSFET. In addition, BiCMOS technology is applied in the error amplifier for an accurate current sensing and a fast transient response. The DC-DC converter is fabricated with 0.35 µm BiCMOS process. Experimental results show that the fully integrated converter operates at 1.3 MHz switching frequency with a supply voltage of 5 V. The output DC voltage is obtained as expected and the output ripple is controlled to be within 2% with a 30 µH off-chip inductor and 100 µF off-chip capacitor.

  10. Regenerative switching CMOS system

    DOEpatents

    Welch, James D.

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  11. Regenerative switching CMOS system

    DOEpatents

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  12. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

    PubMed

    Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

    2016-02-22

    The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.

  13. Inverse source problems for eddy current equations

    NASA Astrophysics Data System (ADS)

    Alonso Rodríguez, Ana; Camaño, Jessika; Valli, Alberto

    2012-01-01

    We study the inverse source problem for the eddy current approximation of Maxwell equations. As for the full system of Maxwell equations, we show that a volume current source cannot be uniquely identified by knowledge of the tangential components of the electromagnetic fields on the boundary, and we characterize the space of non-radiating sources. On the other hand, we prove that the inverse source problem has a unique solution if the source is supported on the boundary of a subdomain or if it is the sum of a finite number of dipoles. We address the applicability of this result for the localization of brain activity from electroencephalography and magnetoencephalography measurements.

  14. Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Kwon, Sung-Kyu; Kwon, Hyuk-Min; Choi, Woon-Il; Song, Hyeong-Sub; Lee, Hi-Deok

    2016-05-01

    The effects of the shallow trench isolation (STI) edge on low frequency noise characteristics of source-follower (SF) transistors in CMOS image sensors (CIS) were investigated. Random telegraph signal (RTS) noise and 1/f noise were measured in a CIS operating voltage region for a realistic assessment. SF transistor with STI edge in contact with channel shows a lower probability of generating RTS noise but greater RTS amplitude due to the enhanced trap density induced by STI-induced damage. SF MOSFETs without STI exhibit a much lower 1/f noise power spectral density in spite of the greater RTS generation probability, which is due to the decreased trap density. Therefore, SF transistors without STI edge in contact with channel are promising candidates for low noise CIS applications.

  15. Centroid Position as a Function of Total Counts in a Windowed CMOS Image of a Point Source

    SciTech Connect

    Wurtz, R E; Olivier, S; Riot, V; Hanold, B J; Figer, D F

    2010-05-27

    We obtained 960,200 22-by-22-pixel windowed images of a pinhole spot using the Teledyne H2RG CMOS detector with un-cooled SIDECAR readout. We performed an analysis to determine the precision we might expect in the position error signals to a telescope's guider system. We find that, under non-optimized operating conditions, the error in the computed centroid is strongly dependent on the total counts in the point image only below a certain threshold, approximately 50,000 photo-electrons. The LSST guider camera specification currently requires a 0.04 arcsecond error at 10 Hertz. Given the performance measured here, this specification can be delivered with a single star at 14th to 18th magnitude, depending on the passband.

  16. Programmable, very low noise current source

    NASA Astrophysics Data System (ADS)

    Scandurra, G.; Cannatà, G.; Giusi, G.; Ciofi, C.

    2014-12-01

    We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.

  17. A compact rail-to-rail CMOS buffer amplifier with very low quiescent current

    NASA Astrophysics Data System (ADS)

    Arslan, Emre; Yıldız, Merih; Minaei, Shahram

    2015-06-01

    In this work, a very compact, rail-to-rail, high-speed buffer amplifier for liquid crystal display (LCD) applications is proposed. Compared to other buffer amplifiers, the proposed circuit has a very simple architecture, occupies a small number of transistors and also has a large driving capacity with very low quiescent current. It is composed of two complementary differential input stages to provide rail-to-rail driving capacity. The push-pull transistors are directly connected to the differential input stage, and the output is taken from an inverter. The proposed buffer circuit is laid out using Mentor Graphics IC Station layout editor using AMS 0.35 μm process parameters. It is shown by post-layout simulations that the proposed buffer can drive a 1 nF capacitive load within a small settling time under a full voltage swing, while drawing only 1.6 μA quiescent current from a 3.3 V power supply.

  18. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  19. Programmable, very low noise current source.

    PubMed

    Scandurra, G; Cannatà, G; Giusi, G; Ciofi, C

    2014-12-01

    We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA. PMID:25554328

  20. CMOS correlated-double-sampling and hold structure based on novel dynamic source-follower for large format infrared focal-plane-array

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Yuan, Xianghui; Huang, Youshu

    2003-07-01

    In this paper, a CMOS correlated double sampling and hold (CDSH) structure based on novel dynamic source follower for large format infrared focal-plane array (IRFPA) is proposed. The primary noise (fixed-pattern noise (FPN) and KTC reset noise, etc) of the CMOS image sensor is reduced, through the improved CDSH structure based on the novel dynamic source follower, and all pixels in the selected row can start integrating simultaneously; the readout process happens in the next row selection time, which can increase the frame frequency, and the output waveform is boxcar, which is easy-to-realize analog/digital conversion. SPICE simulation results have shown that the proposed improved CDSH structure can achieve the advantages of simple driving signal, large dynamic range in large format IRFPA with low power consumption.

  1. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter.

    PubMed

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-01-01

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) deletedCMOS terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz. PMID:26950131

  2. An On-Chip Multi-Voltage Power Converter With Leakage Current Prevention Using 0.18 μm High-Voltage CMOS Process.

    PubMed

    Lo, Yi-Kai; Chen, Kuanfu; Gad, Parag; Liu, Wentai

    2016-02-01

    In this paper, we present an on-chip multi-voltage power converter incorporating of a quad-voltage timing-control rectifier and regulators to produce ±12 V and ±1.8 V simultaneously through inductive powering. The power converter achieves a PCE of 77.3% with the delivery of more than 100 mW to the implant. The proposed rectifier adopts a two-phase start-up scheme and mixed-voltage gate controller to avoid substrate leakage current. This current cannot be prevented by the conventional dynamic substrate biasing technique when using the high-voltage CMOS process with transistor threshold voltage higher than the turn-on voltage of parasitic diodes. High power conversion efficiency is achieved by 1) substrate leakage current prevention, 2) operating all rectifying transistors as switches with boosted gate control voltages, and 3) compensating the delayed turn-on and preventing reverse leakage current of rectifying switches with the proposed look-ahead comparator. This chip occupies an area of 970 μm × 4500 μm in a 0.18 μ m 32 V HV CMOS process. The quad-voltage timing-control rectifier alone is able to output a high DC voltage at the range of [2.5 V, 25 V]. With this power converter, both bench-top experiment and in-vivo power link test using a rat model were validated.

  3. HIGH CURRENT RADIO FREQUENCY ION SOURCE

    DOEpatents

    Abdelaziz, M.E.

    1963-04-01

    This patent relates to a high current radio frequency ion source. A cylindrical plasma container has a coil disposed around the exterior surface thereof along the longitudinal axis. Means are provided for the injection of an unionized gas into the container and for applying a radio frequency signal to the coil whereby a radio frequency field is generated within the container parallel to the longitudinal axis thereof to ionize the injected gas. Cathode and anode means are provided for extracting transverse to the radio frequency field from an area midway between the ends of the container along the longitudinal axis thereof the ions created by said radio frequency field. (AEC)

  4. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    NASA Technical Reports Server (NTRS)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  5. On noise in time-delay integration CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Levski, Deyan; Choubey, Bhaskar

    2016-05-01

    Time delay integration sensors are of increasing interest in CMOS processes owing to their low cost, power and ability to integrate with other circuit readout blocks. This paper presents an analysis of the noise contributors in current day CMOS Time-Delay-Integration image sensors with various readout architectures. An analysis of charge versus voltage domain readout modes is presented, followed by a noise classification of the existing Analog Accumulator Readout (AAR) and Digital Accumulator Readout (DAR) schemes for TDI imaging. The analysis and classification of existing readout schemes include, pipelined charge transfer, buffered direct injection, voltage as well as current-mode analog accumulators and all-digital accumulator techniques. Time-Delay-Integration imaging modes in CMOS processes typically use an N-number of readout steps, equivalent to the number of TDI pixel stages. In CMOS TDI sensors, where voltage domain readout is used, the requirements over speed and noise of the ADC readout chain are increased due to accumulation of the dominant voltage readout and ADC noise with every stage N. Until this day, the latter is the primary reason for a leap-back of CMOS TDI sensors as compared to their CCD counterparts. Moreover, most commercial CMOS TDI implementations are still based on a charge-domain readout, mimicking a CCD-like operation mode. Thus, having a good understanding of each noise contributor in the signal chain, as well as its magnitude in different readout architectures, is vital for the design of future generation low-noise CMOS TDI image sensors based on a voltage domain readout. This paper gives a quantitative classification of all major noise sources for all popular implementations in the literature.

  6. On noise in time-delay integration CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Levski, Deyan; Choubey, Bhaskar

    2016-05-01

    Time delay integration sensors are of increasing interest in CMOS processes owing to their low cost, power and ability to integrate with other circuit readout blocks. This paper presents an analysis of the noise contributors in current day CMOS Time-Delay-Integration image sensors with various readout architectures. An analysis of charge versus voltage domain readout modes is presented, followed by a noise classification of the existing Analog Accumulator Readout (AAR) and Digital Accumulator Readout (DAR) schemes for TDI imaging. The analysis and classification of existing readout schemes include, pipelined charge transfer, buffered direct injection, voltage as well as current-mode analog accumulators and all-digital accumulator techniques. Time-Delay-Integration imaging modes in CMOS processes typically use an N-number of readout steps, equivalent to the number of TDI pixel stages. In CMOS TDI sensors, where voltage domain readout is used, the requirements over speed and noise of the ADC readout chain are increased due to accumulation of the dominant voltage readout and ADC noise with every stage N. Until this day, the latter is the primary reason for a leap-back of CMOS TDI sensors as compared to their CCD counterparts. Moreover, most commercial CMOS TDI implementations are still based on a charge-domain readout, mimicking a CCD-like operation mode. Thus, having a good understanding of each noise contributor in the signal chain, as well as its magnitude in different readout architectures, is vital for the design of future generation low-noise CMOS TDI image sensors based on a voltage domain readout. This paper gives a quantitative classification of all major noise sources for all popular implementations in the literature.

  7. Comparative analyses of phase noise in 28 nm CMOS LC oscillator circuit topologies: Hartley, Colpitts, and common-source cross-coupled differential pair.

    PubMed

    Chlis, Ilias; Pepe, Domenico; Zito, Domenico

    2014-01-01

    This paper reports comparative analyses of phase noise in Hartley, Colpitts, and common-source cross-coupled differential pair LC oscillator topologies in 28 nm CMOS technology. The impulse sensitivity function is used to carry out both qualitative and quantitative analyses of the phase noise exhibited by each circuit component in each circuit topology with oscillation frequency ranging from 1 to 100 GHz. The comparative analyses show the existence of four distinct frequency regions in which the three oscillator topologies rank unevenly in terms of best phase noise performance, due to the combined effects of device noise and circuit node sensitivity.

  8. Extracted current saturation in negative ion sources

    SciTech Connect

    Mochalskyy, S.; Lifschitz, A. F.; Minea, T.

    2012-06-01

    The extraction of negatively charged particles from a negative ion source is one of the crucial issues in the development of the neutral beam injector system for future experimental reactor ITER. Full 3D electrostatic particle-in-cell Monte Carlo collision code - ONIX [S. Mochalskyy et al., Nucl. Fusion 50, 105011 (2010)] - is used to simulate the hydrogen plasma behaviour and the extracted particle features in the vicinity of the plasma grid, both sides of the aperture. It is found that the contribution to the extracted negative ion current of ions born in the volume is small compared with that of ions created at the plasma grid walls. The parametric study with respect to the rate of negative ions released from the walls shows an optimum rate. Beyond this optimum, a double layer builds-up by the negative ion charge density close to the grid aperture surface reducing thus extraction probability, and therefore the extracted current. The effect of the extraction potential and magnetic field magnitudes on the extraction is also discussed. Results are in good agreement with available experimental data.

  9. Ferroelectric, stacked gate FETs: A prospective for planar CMOS with reduced leakage current and Sub-kT/q subthreshold swing

    NASA Astrophysics Data System (ADS)

    Kumar, Mirgender; Park, Si-Hyun

    2016-07-01

    The planar silicon-on-insulator (SOI) based metal-oxide semiconductor (MOS) structure has been at the center of attention of researchers who are attempting to extend its scalability. This study presents an analysis of ferroelectric MOS field effect transis-tors (Fe-MOSFETs) based on the surface potential, threshold voltage, subthreshold swing, leakage current, ON current and electron temperature. In addition, the electro-static integrity ( EI) factor and the threshold-voltage-to-swing ratio for Fe-MOSFETs were estimated and compared with those of conventional, high-k and double-gate (DG) MOSFETs. The analysis shows that the Fe-MOSFET is able to enhance the scalability and fulfil the expectation of researchers studying planar complementary MOS (CMOS) devices.

  10. Phase Transition Experimental and Theoretical Study of Micro Power Generator Supplying Source for CMOS Chip Based on Ferroelectric Ceramic Nano-Porous Material.

    PubMed

    Zhang, Zhenhai; Yu, Wei; Shi, Zhiguo; Shen, Yajing; Zhang, Donghong; Li, Kejie; Yang, Zhan

    2015-04-01

    We demonstrated both experimentally and in theory analysis and calculation that the tin-modified lead zirconate titanate nanoporous ferroelectric generator system can perform as a micro-power supplying source for CMOS chip. The ferroelectric ceramic phase transition under transverse shock wave compression can charge external storage capacitor. The nanoporous microstructure ferro-electric ceramic micro-pulsed-power system is capable of generating low output voltage pulses and supplying CMOS chip with micro power sources. We developed the methodology for theory analysis and experimental operation of the ferroelectric generator. Analysis of the porous ferroelectric ceramic material was carried out by X-ray diffractometry and X-ray photoelectron spectroscopy. Microstructures and surface morphology of porous ferroelectric ceramics samples were examined by using scanning electron microscopy. The planar shock wave experiments were conducted on a compressed-gas gun. The experimental results were in good agreement with the theory analysis. Keywords: PSZT Ferroelectric Ceramic, Shock Wave, Phase Transition, Depolarization, Micro-Power-Generator.

  11. Phase Transition Experimental and Theoretical Study of Micro Power Generator Supplying Source for CMOS Chip Based on Ferroelectric Ceramic Nano-Porous Material.

    PubMed

    Zhang, Zhenhai; Yu, Wei; Shi, Zhiguo; Shen, Yajing; Zhang, Donghong; Li, Kejie; Yang, Zhan

    2015-04-01

    We demonstrated both experimentally and in theory analysis and calculation that the tin-modified lead zirconate titanate nanoporous ferroelectric generator system can perform as a micro-power supplying source for CMOS chip. The ferroelectric ceramic phase transition under transverse shock wave compression can charge external storage capacitor. The nanoporous microstructure ferro-electric ceramic micro-pulsed-power system is capable of generating low output voltage pulses and supplying CMOS chip with micro power sources. We developed the methodology for theory analysis and experimental operation of the ferroelectric generator. Analysis of the porous ferroelectric ceramic material was carried out by X-ray diffractometry and X-ray photoelectron spectroscopy. Microstructures and surface morphology of porous ferroelectric ceramics samples were examined by using scanning electron microscopy. The planar shock wave experiments were conducted on a compressed-gas gun. The experimental results were in good agreement with the theory analysis. Keywords: PSZT Ferroelectric Ceramic, Shock Wave, Phase Transition, Depolarization, Micro-Power-Generator. PMID:26353542

  12. A zero-voltage switching technique for minimizing the current-source power of implanted stimulators.

    PubMed

    Çilingiroğlu, Uğur; İpek, Sercan

    2013-08-01

    The current-source power of an implanted stimulator is reduced almost to the theoretical minimum by driving the electrodes directly from the secondary port of the inductive link with a dedicated zero-voltage switching power supply. A feedback loop confined to the secondary of the inductive link adjusts the timing and conduction angle of switching to provide just the right amount of supply voltage needed for keeping the current-source voltage constant at or slightly above the compliance limit. Since drive is based on current rather than voltage, and supply-voltage update is near real-time, the quality of the current pulses is high regardless of how the electrode impedance evolves during stimulation. By scaling the switching frequency according to power demand, the technique further improves overall power consumption of the stimulator. The technique is implemented with a very simple control circuitry comprising a comparator, a Schmitt trigger and a logic gate of seven devices in addition to an on-chip switch and an off-chip capacitor. The power consumed by the proposed supply circuit itself is no larger than what the linear regulator of a conventional supply typically consumes for the same stimulation current. Still, the sum of supply and current-source power is typically between 20% and 75% of the conventional source power alone. Functionality of the proposed driver is verified experimentally on a proof-of-concept prototype built with 3.3 V devices in a 0.18 μm CMOS technology. PMID:23893206

  13. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

    PubMed Central

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-01-01

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31×31 focal plane array has been fully integrated in a 0.13μm standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0.2μV RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0.6 nW at 270 GHz and 0.8 nW at 600 GHz. PMID:26950131

  14. Sources and Losses of Ring Current Ions

    NASA Technical Reports Server (NTRS)

    Chen, Sheng-Hsien; Fok, Mei-Ching H.; Angeloupoulos, Vassilis

    2010-01-01

    During geomagnetic quiet times, in-situ measurements of ring current energetic ions (few to few tens of keVs) from THEMIS spacecraft often exhibit multiple ion populations at discrete energies that extend from the inner magnetosphere to the magnetopause at dayside or plasma sheet at nightside. During geomagnetic storm times, the levels of fluxes as well as the mean energies of these ions elevated dramatically and the more smooth distributions in energies and distances during quiet times are disrupted into clusters of ion populations with more confined spatial extends. This reveals local plasma heating processes that might have come into play. Several processes have been proposed. Magnetotail dipolarization, sudden enhancement of field-aligned current, local current disruptions, and plasma waves are possible mechanisms to heat the ions locally as well as strong convections of energetic ions directly from the magnetotail due to reconnections. We will examine two geomagnetic storms on October 11, 2008 and July 22, 2009 to reveal possible heating mechanisms. We will analyze in-situ plasma and magnetic field measurements from THEMIS, GOES, and DMSP for the events to study the ion pitch angle distributions and magnetic field perturbations in the auroral ionosphere and inner magnetosphere where the plasma heating processes occur.

  15. Current status and future plans for NBS radiometric source standards

    NASA Technical Reports Server (NTRS)

    Kostkowski, H. J.

    1975-01-01

    The accuracy and long-term stability of currently available NBS radiometric source standards are described. Current research efforts and expected results in this area are outlined. There are over ten NBS radiometric source standards currently available or under development that are of interest for solar measurements or for remote sensing of the earth. The standards and sources are classified and described in terms of the radiometric quantities they represent -- spectral radiance, spectral irradiance and irradiance.

  16. High Current Ion Sources and Injectors for Heavy Ion Fusion

    SciTech Connect

    Kwan, Joe W.

    2005-02-15

    Heavy ion beam driven inertial fusion requires short ion beam pulses with high current and high brightness. Depending on the beam current and the number of beams in the driver system, the injector can use a large diameter surface ionization source or merge an array of small beamlets from a plasma source. In this paper, we review the scaling laws that govern the injector design and the various ion source options including the contact ionizer, the aluminosilicate source, the multicusp plasma source, and the MEVVA source.

  17. SEMICONDUCTOR INTEGRATED CIRCUITS: A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

    NASA Astrophysics Data System (ADS)

    Krit, Salahddine; Qjidaa, Hassan; El Affar, Imad; Khadija, Yafrah; Messghati, Ziani; El-Ghzizal, Yassir

    2010-04-01

    This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-μm CMOS technology and operates with a 2.7 to 3.6 V supply voltage. It has an area of 0.4 mm2; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption.

  18. Future of nano CMOS technology

    NASA Astrophysics Data System (ADS)

    Iwai, Hiroshi

    2015-10-01

    Although Si MOS devices have dominated the integrated circuit applications over the four decades, it has been anticipated that the development of CMOS would reach its limits after the next decade because of the difficulties in the technologies for further downscaling and also because of some fundamental limits of MOSFETs. However, there have been no promising candidates yet, which can replace Si MOSFETs with better performance with low cost. Thus, for the moment, it seems that we have to stick to the Si MOSFET devices until their end. The downsizing is limited by the increase of off-leakage current between source and drain. In order to suppress the off-leakage current, multi-gate structures (FinFET, Tri-gate, and Si-nanowire MOSFETs) are replacing conventional planar MOSFETs, and continuous innovation of high-k/metal gate technologies has enabled EOT scaling down to 0.9 nm in production. However, it was found that the multi-gate structures have a future big problem of significant conduction reduction with decrease in fin width. Also it is not easy to further decrease EOT because of the mobility and reliability degradation. Furthermore, the development of EUV (Extremely Ultra-Violet) lithography, which is supposed to be essential for sub-10 nm lithography, delays significantly because of insufficient illumination intensity for production. Thus, it is now expected that the reduction rate of the gate length, which has a strong influence on the off-leakage current, will become slower in near future.

  19. [Research on Constant-current Characteristics of Howland Current Source Used in Bioelectrical Impedance Detection].

    PubMed

    Lin, Xingjian; Zhao, Weijie; Liu, Xiaojuan; Li, Lihua

    2015-04-01

    This study aims to analyze and improve Howland current source circuit and to study the constant current source of alternating current with high output impedance and high stability. A simulation study was carried out on the constant-current characteristics of Howland current source from two aspects of resistance match value and the selection of Op amp parameters, and then the output impedance was analyzed. The simulation experiment showed that when it was with the best matched resistance, the constant-current characteristics of Howland current source was better. Op amp parameters could affect the constant-current characteristics of Howland current source. In Howland current source circuit, the current source after parameter optimization had better output impedance and load capacity. The results showed that there was the best matched resistance in the selection by Howland current source. The Op amp with large broadband, high slew rate and open loop gain, and wide range of power supply voltage is more suitable for the bioelectrical impedance detection circuit.

  20. An equivalent current source model and laplacian weighted minimum norm current estimates of brain electrical activity.

    PubMed

    He, Bin; Yao, D; Lian, Jie; Wu, D

    2002-04-01

    We have developed a method for estimating the three-dimensional distribution of equivalent current sources inside the brain from scalp potentials. Laplacian weighted minimum norm algorithm has been used in the present study to estimate the inverse solutions. A three-concentric-sphere inhomogeneous head model was used to represent the head volume conductor. A closed-form solution of the electrical potential over the scalp and inside the brain due to a point current source was developed for the three-concentric-sphere inhomogeneous head model. Computer simulation studies were conducted to validate the proposed equivalent current source imaging. Assuming source configurations as either multiple dipoles or point current sources/sinks, in computer simulations we used our method to reconstruct these sources, and compared with the equivalent dipole source imaging. Human experimental studies were also conducted and the equivalent current source imaging was performed on the visual evoked potential data. These results highlight the advantages of the equivalent current source imaging and suggest that it may become an alternative approach to imaging spatially distributed current sources-sinks in the brain and other organ systems.

  1. CMOS Detector Technology

    NASA Astrophysics Data System (ADS)

    Hoffman, Alan; Loose, Markus; Suntharalingam, Vyshnavi

    2005-01-01

    An entry level overview of state-of-the-art CMOS detector technology is presented. Operating principles and system architecture are explained in comparison to the well-established CCD technology, followed by a discussion of important benefits of modern CMOS-based detector arrays. A number of unique CMOS features including different shutter modes and scanning concepts are described. In addition, sub-field stitching is presented as a technique for producing very large imagers. After a brief introduction to the concept of monolithic CMOS sensors, hybrid detectors technology is introduced. A comparison of noise reduction methods for CMOS hybrids is presented. The final sections review CMOS fabrication processes for monolithic and vertically integrated image sensors.

  2. MEG-based imaging of focal neuronal current sources

    SciTech Connect

    Phillips, J.W.; Leahy, R.M.; Mosher, J.C.

    1996-07-01

    We describe a new approach to imaging neuronal current sources from measurements of the magnetoencephalogram (MEG) associated with sensory, motor, or cognitive brain activation. Previous approaches to this problem have concentrated on the use of weighted minimum norm inverse methods. While these methods ensure a unique solution, they do not introduce information specific to the MEG inverse problem, often producing overly smoothed solutions and exhibiting severe sensitivity to noise. We describe a Bayesian formulation of the inverse problem in which a Gibbs prior is constructed to reflect the sparse focal nature of neuronal current sources associated with evoked response data. The prior involves a binary process indicating active sources and a continuous Gaussian process designating associated amplitudes. An estimate of the primary current source distribution for a specific data set is formed by maximizing over the posterior probability with respect to the binary and continuous variables.

  3. Development of a high current H(-) ion source for cyclotrons.

    PubMed

    Etoh, H; Aoki, Y; Mitsubori, H; Arakawa, Y; Mitsumoto, T; Yajima, S; Sakuraba, J; Kato, T; Okumura, Y

    2014-02-01

    A multi-cusp DC H(-) ion source has been designed and fabricated for medical applications of cyclotrons. Optimization of the ion source is in progress, such as the improvement of the filament configuration, magnetic filter strength, extraction electrode's shape, configuration of electron suppression magnets, and plasma electrode material. A small quantity of Cs has been introduced into the ion source to enhance the negative ion beam current. The ion source produced 16 mA of DC H(-) ion beam with the Cs-seeded operation at a low arc discharge power of 2.8 kW.

  4. Design of a 10-bit segmented current-steering digital-to-analog converter in CMOS 65 nm technology for the bias of new generation readout chips in high radiation environment

    NASA Astrophysics Data System (ADS)

    De Robertis, G.; Loddo, F.; Mattiazzo, S.; Pacher, L.; Pantano, D.; Tamma, C.

    2016-01-01

    A new pixel front end chip for HL-LHC experiments in CMOS 65nm technology is under development by the CERN RD53 collaboration together with the Chipix65 INFN project. This work describes the design of a 10-bit segmented current-steering Digital-to-Analog Converter (DAC) to provide a programmable bias current to the analog blocks of the circuit. The main requirements are monotonicity, good linearity, limited area consumption and radiation hardness up to 10 MGy. The DAC was prototyped and electrically tested, while irradiation tests will be performed in Autumn 2015.

  5. Stationary Yang-Mills fields with current sources

    SciTech Connect

    Mathelitsch, L.; Mitter, H.; Widder, F.

    1982-02-15

    Classical, time-independent solutions of the Yang-Mills equations are studied for spherically symmetric situations. In the presence of charge and current distributions the same types of solutions are found as for purely electric sources: Besides the Abelian (Coulomb-Biot-Savart) solution there are two non-Abelian types, one of which requires minimal source strengths and comes in two branches. The solution pattern is investigated by rough numerical calculations for a simple source model corresponding to spherical shell distributions. In the absence of charge distributions an additional type is found, which has zero electric field and a magnetic field corresponding to a monopole of fixed strength. This type of solution exists for a large class of reasonable source currents. Some analytical examples are given in addition to numerical results for the shell model. Stability problems are not touched.

  6. Fabrication of CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Malinovich, Yacov; Koltin, Ephie; Choen, David; Shkuri, Moshe; Ben-Simon, Meir

    1999-04-01

    In order to provide its customers with sub-micron CMOS fabrication solutions for imaging applications, Tower Semiconductor initiated a project to characterize the optical parameters of Tower's 0.5-micron process. A special characterization test chip was processed using the TS50 process. The results confirmed a high quality process for optical applications. Perhaps the most important result is the process' very low dark current, of 30-50 pA/cm2, using the entire window of process. This very low dark current characteristic was confirmed for a variety of pixel architectures. Additionally, we have succeeded to reduce and virtually eliminate the white spots on large sensor arrays. As a foundry Tower needs to support fabrication of many different imaging products. Therefore we have developed a fabrication methodology that is adjusted to the special needs of optical applications. In order to establish in-line process monitoring of the optical parameters, Tower places a scribe line optical test chip that enables wafer level measurements of the most important parameters, ensuring the optical quality and repeatability of the process. We have developed complementary capabilities like in house deposition of color filter and fabrication of very large are dice using sub-micron CMOS technologies. Shellcase and Tower are currently developing a new CMOS image sensor optical package.

  7. Transversal-readout CMOS active pixel image sensor

    NASA Astrophysics Data System (ADS)

    Miyatake, Shigehiro; Ishida, Kouichi; Morimoto, Takashi; Masaki, Yasuo; Tanabe, Hideki

    2001-05-01

    This paper presents a CMOS active pixel image sensor (APS) with a transversal readout architecture that eliminates the vertically striped fixed pattern noise (FPN). There are two kinds of FPNs for CMOS APSs. One originates form the pixel- to-pixel variation in dark current and source-follower threshold voltage, and the other from the column-to-column variation in column readout structures. The former may become invisible in the future due to process improvements. However, the latter, which result sin a vertically striped FPN, is and will be conspicuous without some subtraction because of the correlation in the vertical direction. The pixel consists of a photodiode, a row- and a column-reset transistor, a source follower input transistor, and a column-select transistor instead of the row-select transistor in conventional CMOS APSs. The column-select transistor is connected to a signal line, which runs horizontally instead of vertically. Every horizontal signal line is merged into a single vertical signal line via a row- select transistor, which can be made large enough to make its on-resistence variation negligible because of its low driving frequency. Therefore, the sensor has neither a vertical nor horizontal stripe FPN.

  8. CAOS-CMOS camera.

    PubMed

    Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

    2016-06-13

    Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

  9. CAOS-CMOS camera.

    PubMed

    Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

    2016-06-13

    Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems. PMID:27410361

  10. Effective shielding to measure beam current from an ion source

    SciTech Connect

    Bayle, H.; Delferrière, O.; Gobin, R.; Harrault, F.; Marroncle, J.; Senée, F.; Simon, C.; Tuske, O.

    2014-02-15

    To avoid saturation, beam current transformers must be shielded from solenoid, quad, and RFQ high stray fields. Good understanding of field distribution, shielding materials, and techniques is required. Space availability imposes compact shields along the beam pipe. This paper describes compact effective concatenated magnetic shields for IFMIF-EVEDA LIPAc LEBT and MEBT and for FAIR Proton Linac injector. They protect the ACCT Current Transformers beyond 37 mT radial external fields. Measurements made at Saclay on the SILHI source are presented.

  11. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

    NASA Astrophysics Data System (ADS)

    Wang, G. L.; Moeen, M.; Abedin, A.; Kolahdouz, M.; Luo, J.; Qin, C. L.; Zhu, H. L.; Yan, J.; Yin, H. Z.; Li, J. F.; Zhao, C.; Radamson, H. H.

    2013-09-01

    SiGe has been widely used for source/drain (S/D) engineering in pMOSFETs to enhance channel mobility. In this study, selective Si1-xGex growth (0.25 ≤ x ≤ 0.35) with boron concentration of 1-3 × 1020 cm-3 in the process for 22 nm node complementary metal-oxide semiconductor (CMOS) has been investigated and optimized. The growth parameters were carefully tuned to achieve deposition of high quality and highly strained material. The thermal budget was decreased to 800 °C to suppress dopant diffusion, to minimize Si loss in S/D recesses, and to preserve the S/D recess shape. Two layers of Si1-xGex were deposited: a bottom layer with high Ge content (x = 0.35) which filled the recess and a cap layer with low Ge content (x = 0.25) which was elevated in the S/D regions. The elevated SiGe cap layer was intended to be consumed during the Ni-silicidation process in order to avoid strain reduction in the channel region arising from strain relaxation in SiGe S/D. In this study, a kinetic gas model was also applied to predict the pattern dependency of the growth and to determine the epi-profile in different transistor arrays. The input parameters include growth temperature, partial pressures of reactant gases, and chip layout. By using this model, the number of test wafers for epitaxy experiments can be decreased significantly. When the epitaxy process parameters can be readily predicted by the model for epi-profile control in an advanced chip design, fast and cost-effective process development can be achieved.

  12. Brazilian Synchrotron Light Source: current results and future perspectives

    NASA Astrophysics Data System (ADS)

    Roque da Silva, Antonio Jose

    2013-03-01

    The application of synchrotron radiation in a great variety of fields in general, and condensed matter in particular, has increased steadily worldwide. This, to a large extent, is a result of the availability of the much brighter third-generation light sources, which opened up new experimental techniques. Brazil gave an important contribution to science in Latin America through the development of the necessary technology and the construction of the first synchrotron in the southern hemisphere, still the only one in Latin America. The Laboratório Nacional de Luz Síncrotron - LNLS, operates this installation as an open facility since 1997, having today more than 1300 users yearly. Despite all this success, the current Brazilian light source is a second-generation machine, with relatively low electron energy, high emittance and few straight sections for insertion devices. LNLS is currently engaged in the design and construction of a new, third-generation synchrotron light source. It is being planned to be a state of the art machine, providing tools for cutting edge research that are non existent today in Brazil. In this talk an overview of the status of the current Brazilian light source will be provided, illustrated with some experimental results from users, as well as the future perspectives of the new synchrotron source.

  13. Auroral electron beams - Electric currents and energy sources

    NASA Astrophysics Data System (ADS)

    Kaufmann, R. L.

    1981-09-01

    The energy sources, electric equipotentials and electric currents associated with auroral electron acceleration observed during rocket flight 18:152 are discussed. Steep flow gradients at the interface between the convection boundary layer and the plasma sheet are considered as the probable source of energy for dayside and dawn and dusk auroras, while it is suggested that the cross tail potential drop may provide an energy source for some midnight auroras. Birkeland currents that flow along distorted field lines are shown possibly to be important in the mechanism that produces U-shaped equipotentials in the ionosphere, as well as unexpected jumps in ionospheric or magnetotail currents and unusual electric fields and plasma drift in the magnetotail. The production of equipotential structures under oppositely directed higher-altitude electric fields is discussed, and it is pointed out that cold ionospheric plasma can enter the structure in a cusp-shaped region where fields are weak. The rocket data reveals that the sudden change in conductivity at the edge of the bright arc and the constancy of the electric field produce sudden changes in the Hall and Pedersen currents. It is concluded that current continuity is satisfied primarily by east-west changes in the electric field or conductivity.

  14. Radiation characteristics of scintillator coupled CMOS APS for radiography conditions

    NASA Astrophysics Data System (ADS)

    Kim, Kwang Hyun; Kim, Soongpyung; Kang, Dong-Won; Kim, Dong-Kie

    2006-11-01

    Under industrial radiography conditions, we analyzed short-term radiation characteristics of scintillator coupled CMOS APS (hereinafter SC CMOS APS). By means of experimentation, the contribution of the transmitted X-ray through the scintillator to the properties of the CMOS APS and the afterimage, generated in the acquired image even at low dose condition, were investigated. To see the transmitted X-ray effects on the CMOS APS, Fein focus™ X-ray machine, two scintillators of Lanex™ Fine and Regular, and two CMOS APS array of RadEye™ were used under the conditions of 50 kV p/1 mAs and 100 kV p/1 mAs. By measuring the transmitted X-ray on signal and Noise Power Spectrum, we analytically examined the generation mechanism of the afterimage, based on dark signal or dark current increase in the sensor, and explained the afterimage in the SC CMOS APS.

  15. Failures of CMOS Circuits Irradiated At Low Rates

    NASA Technical Reports Server (NTRS)

    Goben, Charles A.; Price, William E.

    1990-01-01

    Report describes experiments on irradiation of SGS 4007 complementary metal oxide/semiconductor (CMOS) integrated inverter circuits by 60Co and 137Cs radioactive sources. Purpose of experiments to supplement previous observations that minimum radiation doses at which failure occurred in more-complicated CMOS parts were lower at lower dose rates.

  16. Current status of the Taiwan Photon Source project

    SciTech Connect

    Chang, Shih-Lin

    2014-03-05

    The progress of establishment of a high brightness and low emittance mid-energy storage ring is reported. The status of the 3 GeV Taiwan Photon Source (TPS) currently under construction will be presented. The progress on the civil construction, manufacturing of machine components, as well as the opportunity of using low emittace synchrotron source and phase I beamlines at TPS will be mentioned. The future planning of phase II beamlines and related research will be sketched. Future developments will be also briefly outlined.

  17. Optimization of precision localization microscopy using CMOS camera technology

    NASA Astrophysics Data System (ADS)

    Fullerton, Stephanie; Bennett, Keith; Toda, Eiji; Takahashi, Teruo

    2012-02-01

    Light microscopy imaging is being transformed by the application of computational methods that permit the detection of spatial features below the optical diffraction limit. Successful localization microscopy (STORM, dSTORM, PALM, PhILM, etc.) relies on the precise position detection of fluorescence emitted by single molecules using highly sensitive cameras with rapid acquisition speeds. Electron multiplying CCD (EM-CCD) cameras are the current standard detector for these applications. Here, we challenge the notion that EM-CCD cameras are the best choice for precision localization microscopy and demonstrate, through simulated and experimental data, that certain CMOS detector technology achieves better localization precision of single molecule fluorophores. It is well-established that localization precision is limited by system noise. Our findings show that the two overlooked noise sources relevant for precision localization microscopy are the shot noise of the background light in the sample and the excess noise from electron multiplication in EM-CCD cameras. At low light conditions (< 200 photons/fluorophore) with no optical background, EM-CCD cameras are the preferred detector. However, in practical applications, optical background noise is significant, creating conditions where CMOS performs better than EM-CCD. Furthermore, the excess noise of EM-CCD is equivalent to reducing the information content of each photon detected which, in localization microscopy, reduces the precision of the localization. Thus, new CMOS technology with 100fps, <1.3 e- read noise and high QE is the best detector choice for super resolution precision localization microscopy.

  18. MEG-based imaging of focal neuronal current sources.

    PubMed

    Phillips, J W; Leahy, R M; Mosher, J C

    1997-06-01

    We describe a new approach to imaging neural current sources from measurements of the magnetoencephalogram (MEG) associated with sensory, motor, or cognitive brain activation. Many previous approaches to this problem have concentrated on the use of weighted minimum norm (WMN) inverse methods. While these methods ensure a unique solution, they do not introduce information specific to the MEG inverse problem, often producing overly smoothed solutions and exhibiting severe sensitivity to noise. We describe a Bayesian formulation of the inverse problem in which a Gibbs prior is constructed to reflect the sparse focal nature of neural current sources associated with evoked response data. We demonstrate the method with simulated and experimental phantom data, comparing its performance with several WMN methods.

  19. ULTRA-LOW-ENERGY HIGH-CURRENT ION SOURCE

    SciTech Connect

    Anders, Andre; Yushkov, Georgy Yu.; Baldwin, David A.

    2009-11-20

    The technical objective of the project was to develop an ultra-low-energy, high-intensity ion source (ULEHIIS) for materials processing in high-technology fields including semiconductors, micro-magnetics and optics/opto-electronics. In its primary application, this ion source can be incorporated into the 4Wave thin-film deposition technique called biased target ion-beam deposition (BTIBD), which is a deposition technique based on sputtering (without magnetic field, i.e., not the typical magnetron sputtering). It is a technological challenge because the laws of space charge limited current (Child-Langmuir) set strict limits of how much current can be extracted from a reservoir of ions, such as a suitable discharge plasma. The solution to the problem was an innovative dual-discharge system without the use of extraction grids.

  20. MEG-based imaging of focal neuronal current sources

    SciTech Connect

    Phillips, J.W.; Leahy, R.M.; Mosher, J.C.

    1997-06-01

    The authors describe a new approach to imaging neural current sources from measurements of the magnetoencephalogram (MEG) associated with sensory, motor, or cognitive brain activation. Many previous approaches to this problem have concentrated on the use of weighted minimum norm (WMN) inverse methods. While these methods ensure a unique solution, they do not introduce information specific to the MEG inverse problem, often producing overly smoothed solutions and exhibiting severe sensitivity to noise. The authors describe a Bayesian formulation of the inverse problem in which a Gibbs prior is constructed to reflect the sparse focal nature of neural current sources associated with evoked response data. They demonstrate the method with simulated and experimental phantom data, comparing its performance with several WMN methods.

  1. SEMICONDUCTOR DEVICES: A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors

    NASA Astrophysics Data System (ADS)

    Miin-Horng, Juang; Chia-Wei, Chang; Der-Chih, Shye; Chuan-Chou, Hwang; Jih-Liang, Wang; Sheng-Liang, Jang

    2010-06-01

    A process simplification scheme for fabricating CMOS poly-Si thin-film transistors (TFTs) has been proposed, which employs large-angle-tilt-implantation of dopant through a gate sidewall spacer (LATITS). By this LATITS scheme, a lightly doped drain region under the oxide spacer is formed by low-dose tilt implantation of phosphorus (or boron) dopant through the spacer, and then the n+-source/drain (n+-S/D) (or p+-S/D) region is formed via using the same photo-mask layer during CMOS integration. For both n-TFT and p-TFT devices, as compared to the sample with conventional single n+-S/D (or p+-S/D) structure, the LATITS scheme can cause an obviously smaller leakage current, due to more gradual dopant distribution and thus smaller electric field. In addition, the resultant on-state currents only show slight degradation for the LATITS scheme. As a result, by the LATITS scheme, CMOS poly-Si TFT devices with an on/off current ratio well above 8 orders may be achieved without needing extra photo-mask layers during CMOS integration.

  2. OFF-SITE SOURCE RECOVERY PROJECT HISTORY AND CURRENT STATUSS

    SciTech Connect

    M. W. PERASON; C. O. GRIGSBY; ET AL

    2000-09-01

    Beginning in the 1950's the federal government, through the Atomic Energy Commission, began providing limited quantities of special nuclear material to industry and research institutions to stimulate advances in nuclear science and technology. By the early 1960s the identified beneficial uses of radioactive material had added Am-241, Cs- 137, CO-60, and Sr-90 to the list of common isotopes which were distributed in significant numbers as high-energy sealed sources for industry, medicine and research. By the mid 1980s many of these sealed radioactive sources were thirty years old and the changing priorities of research and industry had rendered many of them excess. Unfortunately, many of these sources exceeded activity limits established for Low-Level Waste (LLW) disposal and the owners were left with no viable options to rid themselves of unwanted material. In 1985, Congress attempted to address this concern by assigning responsibility for disposal of radioactive material which exceeded the Class-C LLW limits to the US Department of Energy (DOE) in the Low-Level Waste Policy Amendments Act of 1985 (PL 99-240). As with other attempts for disposal facility development however, the years passed and the facilities were not forthcoming. This paper briefly describes the history of government efforts to effect retrieval of these sources and provides projections on availability of retrieval services by Los Alamos National Laboratory (LANL). A summary of eligible materials, points of contact at LANL, and recommended actions by current source owners are included.

  3. Improved current control makes inverters the power sources of choice

    SciTech Connect

    Yamamoto, H.; Harada, S.; Ueyama, T.

    1997-02-01

    It is now generally understood that by increasing the operating or switching frequency of a power source the size of the main transformer and main reactor can be shrunk. Thus, a 300-A DC welding power source weighing well under 100 lb can be produced. This makes the inverter power source an ideal choice for applications requiring equipment maneuverability. It is also generally understood that due to higher switching frequencies, a smoother output is obtained from inverter power sources. In the late 1980s, the company developed a new double-inverter power source by which inverted DC weld output is inverted back to AC weld output. This product was the first of its kind in the world. Again, the small compact size of this product was of great interest. Utilizing current waveform control, it was realized that fast response switching from electrode negative to electrode positive could be accurately controlled, offering benefits such as AC GTA welding with high-frequency start only, even at a low welding current. The primary benefit is the ability to limit the electrode positive half cycle to less than 5%. The electrode positive half cycle is responsible for tungsten erosion, which also creates the balling effect of a tungsten electrode. By limiting the electrode positive portion of the AC cycle to a very low level, a rather sharp point can be maintained on the tungsten, which creates a very concentrated, focused arc column. This ability provides excellent joint penetration in fillet welding of aluminum alloys, especially on thick plate. It also reduces the heat-affected zone in AC GTA welding of aluminum.

  4. Fundamental study on identification of CMOS cameras

    NASA Astrophysics Data System (ADS)

    Kurosawa, Kenji; Saitoh, Naoki

    2003-08-01

    In this study, we discussed individual camera identification of CMOS cameras, because CMOS (complementary-metal-oxide-semiconductor) imaging detectors have begun to make their move into the CCD (charge-coupled-device) fields for recent years. It can be identified whether or not the given images have been taken with the given CMOS camera by detecting the imager's intrinsic unique fixed pattern noise (FPN) just like the individual CCD camera identification method proposed by the authors. Both dark and bright pictures taken with the CMOS cameras can be identified by the method, because not only dark current in the photo detectors but also MOS-FET amplifiers incorporated in each pixel may produce pixel-to-pixel nonuniformity in sensitivity. Each pixel in CMOS detectors has the amplifier, which degrades image quality of bright images due to the nonuniformity of the amplifier gain. Two CMOS cameras were evaluated in our experiments. They were WebCamGoPlus (Creative), and EOS D30 (Canon). WebCamGoPlus is a low-priced web camera, whereas EOS D30 is for professional use. Image of a white plate were recorded with the cameras under the plate's luminance condition of 0cd/m2 and 150cd/m2. The recorded images were multiply integrated to reduce the random noise component. From the images of both cameras, characteristic dots patterns were observed. Some bright dots were observed in the dark images, whereas some dark dots were in the bright images. The results show that the camera identification method is also effective for CMOS cameras.

  5. Series operation of direct current xenon chloride excimer sources

    NASA Astrophysics Data System (ADS)

    El-Habachi, Ahmed; Shi, Wenhui; Moselhy, Mohamed; Stark, Robert H.; Schoenbach, Karl H.

    2000-09-01

    Stable, direct current microhollow cathode discharges in mixtures of hydrochloric acid, hydrogen, xenon, and neon have been generated in a pressure range of 200-1150 Torr. The cathode hole diameter was 250 μm. Sustaining voltages range from 180 to 250 V at current levels of up to 5 mA. The discharges are strong sources of xenon chloride excimer emission at a wavelength of 308 nm. Internal efficiencies of approximately 3% have been reached at a pressure of 1050 Torr. The spectral radiant power at this pressure was measured as 5 mW/nm at 308 nm for a 3 mA discharge. By using a sandwich electrode configuration, consisting of five perforated, alternate layers of metal and dielectric, a tandem discharge—two discharges in series—could be generated. For an anode-cathode-anode configuration the excimer irradiance, recorded on the axis of the discharge, was twice as large as that of a single discharge. The extension of this basic tandem electrode structure to a multiple electrode configuration allows the generation of high irradiance excimer sources. Placing such a structure with a string of microhollow cathode discharge into an optical resonator promises to lead to a direct current microexcimer laser.

  6. III-V/Ge channel MOS device technologies in nano CMOS era

    NASA Astrophysics Data System (ADS)

    Takagi, Shinichi; Zhang, Rui; Suh, Junkyo; Kim, Sang-Hyeon; Yokoyama, Masafumi; Nishi, Koichi; Takenaka, Mitsuru

    2015-06-01

    CMOS utilizing high-mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high-performance and low power advanced LSIs in the future, because of its enhanced carrier transport properties. However, there are many critical issues and difficult challenges for realizing III-V/Ge-based CMOS on the Si platform such as (1) the formation of high-crystal-quality Ge/III-V films on Si substrates, (2) gate stack technologies to realize superior MOS/MIS interface quality, (3) the formation of a source/drain (S/D) with low resistivity and low leakage current, (4) process integration to realize ultrashort channel devices, and (5) total CMOS integration including Si CMOS. In this paper, we review the recent progress in III-V/Ge MOS devices and process technologies as viable approaches to solve the above critical problems on the basis of our recent research activities. The technologies include MOS gate stack formation, high-quality channel formation, low-resistance S/D formation, and CMOS integration. For the Ge device technologies, we focus on the gate stack technology and Ge channel formation on Si. Also, for the III-V MOS device technologies, we mainly address the gate stack technology, III-V channel formation on Si, the metal S/D technology, and implementation of these technologies into short-channel III-V-OI MOSFETs on Si substrates. On the basis of the present status of the achievements, we finally discuss the possibility of various CMOS structures using III-V/Ge channels.

  7. Electric machine and current source inverter drive system

    DOEpatents

    Hsu, John S

    2014-06-24

    A drive system includes an electric machine and a current source inverter (CSI). This integration of an electric machine and an inverter uses the machine's field excitation coil for not only flux generation in the machine but also for the CSI inductor. This integration of the two technologies, namely the U machine motor and the CSI, opens a new chapter for the component function integration instead of the traditional integration by simply placing separate machine and inverter components in the same housing. Elimination of the CSI inductor adds to the CSI volumetric reduction of the capacitors and the elimination of PMs for the motor further improve the drive system cost, weight, and volume.

  8. High current DC negative ion source for cyclotron.

    PubMed

    Etoh, H; Onai, M; Aoki, Y; Mitsubori, H; Arakawa, Y; Sakuraba, J; Kato, T; Mitsumoto, T; Hiasa, T; Yajima, S; Shibata, T; Hatayama, A; Okumura, Y

    2016-02-01

    A filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In Cs-free operation, continuous H(-) beam of 10 mA and D(-) beam of 3.3 mA were obtained stably at an arc-discharge power of 3 kW and 2.4 kW, respectively. In Cs-seeded operation, H(-) beam current reached 22 mA at a lower arc power of 2.6 kW with less co-extracted electron current. The optimum gas flow rate, which gives the highest H(-) current, was 15 sccm in the Cs-free operation, while it decreased to 4 sccm in the Cs-seeded operation. The relationship between H(-) production and the design/operating parameters has been also investigated by a numerical study with KEIO-MARC code, which gives a reasonable explanation to the experimental results of the H(-) current dependence on the arc power. PMID:26932017

  9. Optical addressing technique for a CMOS RAM

    NASA Technical Reports Server (NTRS)

    Wu, W. H.; Bergman, L. A.; Allen, R. A.; Johnston, A. R.

    1988-01-01

    Progress on optically addressing a CMOS RAM for a feasibility demonstration of free space optical interconnection is reported in this paper. The optical RAM chip has been fabricated and functional testing is in progress. Initial results seem promising. New design and SPICE simulation of optical gate cell (OGC) circuits have been carried out to correct the slow fall time of the 'weak pull down' OGC, which has been characterized experimentally. Methods of reducing the response times of the photodiodes and the associated circuits are discussed. Even with the current photodiode, it appears that an OGC can be designed with a performance that is compatible with a CMOS circuit such as the RAM.

  10. Nanopore-CMOS Interfaces for DNA Sequencing.

    PubMed

    Magierowski, Sebastian; Huang, Yiyun; Wang, Chengjie; Ghafar-Zadeh, Ebrahim

    2016-01-01

    DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews existing and emerging means of interfacing nanopores to CMOS technology with an emphasis on massively-arrayed structures. It presents this in the context of incumbent DNA sequencing techniques, reviews and quantifies nanopore characteristics and models and presents CMOS circuit methods for the amplification of low-current nanopore signals in such interfaces. PMID:27509529

  11. Nanopore-CMOS Interfaces for DNA Sequencing

    PubMed Central

    Magierowski, Sebastian; Huang, Yiyun; Wang, Chengjie; Ghafar-Zadeh, Ebrahim

    2016-01-01

    DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews existing and emerging means of interfacing nanopores to CMOS technology with an emphasis on massively-arrayed structures. It presents this in the context of incumbent DNA sequencing techniques, reviews and quantifies nanopore characteristics and models and presents CMOS circuit methods for the amplification of low-current nanopore signals in such interfaces. PMID:27509529

  12. New progress of high current gasdynamic ion source (invited).

    PubMed

    Skalyga, V; Izotov, I; Golubev, S; Sidorov, A; Razin, S; Vodopyanov, A; Tarvainen, O; Koivisto, H; Kalvas, T

    2016-02-01

    The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)-the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 10(13) cm(-3)) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10(-4)-10(-3) mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments. PMID:26931934

  13. New progress of high current gasdynamic ion source (invited)

    NASA Astrophysics Data System (ADS)

    Skalyga, V.; Izotov, I.; Golubev, S.; Sidorov, A.; Razin, S.; Vodopyanov, A.; Tarvainen, O.; Koivisto, H.; Kalvas, T.

    2016-02-01

    The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)—the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 1013 cm-3) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10-4-10-3 mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ṡ mm ṡ mrad have been demonstrated in recent experiments.

  14. Small-area and compact CMOS emulator circuit for CMOS/nanoscale memristor co-design.

    PubMed

    Shin, Sanghak; Choi, Jun-Myung; Cho, Seongik; Min, Kyeong-Sik

    2013-01-01

    In this paper, a CMOS emulator circuit that can reproduce nanoscale memristive behavior is proposed. The proposed emulator circuit can mimic the pinched hysteresis loops of nanoscale memristor memory's current-voltage relationship without using any resistor array, complicated circuit blocks, etc. that may occupy very large layout area. Instead of using a resistor array, other complicated circuit blocks, etc., the proposed emulator circuit can describe the nanoscale memristor's current-voltage relationship using a simple voltage-controlled resistor, where its resistance can be programmed by the stored voltage at the state variable capacitor. Comparing the layout area between the previous emulator circuit and the proposed one, the layout area of the proposed emulator circuit is estimated to be 32 times smaller than the previous emulator circuit. The proposed CMOS emulator circuit of nanoscale memristor memory will be very useful in developing hybrid circuits of CMOS/nanoscale memristor memory. PMID:24180626

  15. Small-area and compact CMOS emulator circuit for CMOS/nanoscale memristor co-design.

    PubMed

    Shin, Sanghak; Choi, Jun-Myung; Cho, Seongik; Min, Kyeong-Sik

    2013-11-01

    In this paper, a CMOS emulator circuit that can reproduce nanoscale memristive behavior is proposed. The proposed emulator circuit can mimic the pinched hysteresis loops of nanoscale memristor memory's current-voltage relationship without using any resistor array, complicated circuit blocks, etc. that may occupy very large layout area. Instead of using a resistor array, other complicated circuit blocks, etc., the proposed emulator circuit can describe the nanoscale memristor's current-voltage relationship using a simple voltage-controlled resistor, where its resistance can be programmed by the stored voltage at the state variable capacitor. Comparing the layout area between the previous emulator circuit and the proposed one, the layout area of the proposed emulator circuit is estimated to be 32 times smaller than the previous emulator circuit. The proposed CMOS emulator circuit of nanoscale memristor memory will be very useful in developing hybrid circuits of CMOS/nanoscale memristor memory.

  16. Distinct development patterns of c-mos protooncogene expression in female and male mouse germ cells

    SciTech Connect

    Mutter, G.L.; Wolgemuth, D.J.

    1987-08-01

    The protooncogene c-mos is expressed in murine reproductive tissues, producing transcripts of 1.7 and 1.4 kilobases in testis and ovary, respectively. In situ hybridization analysis of c-mos expression in histological sections of mouse ovaries revealed that oocytes are the predominant if not exclusive source of c-mos transcripts. /sup 35/S- or /sup 32/P-labelled RNA probes were transcribed. c-mos transcripts accumulate in growing oocytes, increasing 40- to 90-fold during oocyte and follicular development. c-mos transcripts were also detected in male germ cells and are most abundant after the cells have entered the haploid stage of spermatogenesis. This developmentally regulated pattern of c-mos expression in oocytes and spermatogenic cells suggest that the c-mos gene product may have a function in normal germ-cell differentiation or early embryogenesis.

  17. A high current, short pulse electron source for wakefield accelerators

    SciTech Connect

    Ho, Ching-Hung

    1992-12-31

    Design studies for the generation of a high current, short pulse electron source for the Argonne Wakefield Accelerator are presented. An L-band laser photocathode rf gun cavity is designed using the computer code URMEL to maximize the electric field on the cathode surface for fixed frequency and rf input power. A new technique using a curved incoming laser wavefront to minimize the space charge effect near the photocathode is studied. A preaccelerator with large iris to minimize wakefield effects is used to boost the drive beam to a useful energy of around 20 MeV for wakefield acceleration experiments. Focusing in the photocathode gun and the preaccelerator is accomplished with solenoids. Beam dynamics simulations throughout the preaccelerator are performed using particle simulation codes TBCI-SF and PARMELA. An example providing a useful set of operation parameters for the Argonne Wakefield Accelerator is given. The effects of the sagitta of the curved beam and laser amplitude and timing jitter effects are discussed. Measurement results of low rf power level bench tests and a high power test for the gun cavity are presented and discussed.

  18. A high current, short pulse electron source for wakefield accelerators

    SciTech Connect

    Ho, Ching-Hung.

    1992-01-01

    Design studies for the generation of a high current, short pulse electron source for the Argonne Wakefield Accelerator are presented. An L-band laser photocathode rf gun cavity is designed using the computer code URMEL to maximize the electric field on the cathode surface for fixed frequency and rf input power. A new technique using a curved incoming laser wavefront to minimize the space charge effect near the photocathode is studied. A preaccelerator with large iris to minimize wakefield effects is used to boost the drive beam to a useful energy of around 20 MeV for wakefield acceleration experiments. Focusing in the photocathode gun and the preaccelerator is accomplished with solenoids. Beam dynamics simulations throughout the preaccelerator are performed using particle simulation codes TBCI-SF and PARMELA. An example providing a useful set of operation parameters for the Argonne Wakefield Accelerator is given. The effects of the sagitta of the curved beam and laser amplitude and timing jitter effects are discussed. Measurement results of low rf power level bench tests and a high power test for the gun cavity are presented and discussed.

  19. CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

    NASA Astrophysics Data System (ADS)

    Davidson, Bradley Darren

    WALD fabrication technologies two generations of 2-terminal WALD NEMS switches have been developed. These devices have functional gap heights of 30-50 nm, and actuation voltages typically ranging from 3--5 Volts. Via the extension of a two terminal WALD technology novel 3-terminal WALD NEMS devices were developed. These devices have actuation voltages ranging from 1.5--3 Volts, reliabilities in excess of 2 million cycles, and have been designed to be the fundamental building blocks for WALD NEMS complementary inverters. Through the development of these devices several advancements in the modeling and design of thin-film NEMS devices were achieved. A new model was developed to better characterize pre-actuation currents commonly measured for NEMS switches with nano-scale gate-to-source gap heights. The developed model is an extension of the standard field-emission model and considers the electromechanical response, and electric field effects specific to thin-film NEMS switches. Finally, a multi-physics FEM/FD based model was developed to simulate the dynamic behavior of 2 or 3-terminal electrostatically actuated devices whose electrostatic domains have an aspect ratio on the order of 10-3. The model uses a faux-Lagrangian finite difference method to solve Laplaces equation in a quasi-statatically deforming domain. This model allows for the numerical characterization and design of thin-film NEMS devices not feasible using typical non-specialized BEM/FEM based software. Using this model several novel and feasible designs for fixed-fixed 3-terminal WALD NEMS switches capable for the construction of complementary inverters were discovered.

  20. Low energy CMOS for space applications

    NASA Technical Reports Server (NTRS)

    Panwar, Ramesh; Alkalaj, Leon

    1992-01-01

    The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

  1. Current views on the source of the autophagosome membrane.

    PubMed

    Tooze, Sharon A

    2013-01-01

    Autophagy was discovered in the late 1950s when scientists using the first electron microscopes saw membrane-bound structures in cells that contained cytoplasmic organelles, including mitochondria. Pursuant to further morphological characterization it was recognized that these vesicles, now called autophagosomes, are found in all eukaryotic cells and undergo changes in morphology from a double-membraned vesicle with recognizable content, i.e. sequestered organelles, to a uniformly dense core autolysosome. Genetic screens in the yeast Saccharomyces cerevisiae in the 1990s provided a molecule framework for the next era of discovery during which the interest in, and research into, autophagy has rapidly expanded into many areas of human biology and disease. A relatively small cohort of approximately 36 proteins, called Atgs (autophagy-related proteins), orchestrate the formation of the autophagosome, and these are now being studied and functionally characterized. Although the function of these proteins is being elucidated, the underlying molecular mechanisms of how autophagosomes form are still not completely understood. Recent advances have, however, provided a significant advance in both our understanding of the molecular control of the Atg proteins and the source of the membranes. A consensus view is emerging from these advances that the endoplasmic reticulum is the nucleation site for the autophagosome, and that contributions from other compartments (Golgi, endosomes and plasma membrane) are required. In the present chapter, I review the data from the pre-molecular decades, and discuss the most recent publications to give an overview of the current view of where, and how, autophagosomes form in mammalian cells. PMID:24070469

  2. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    PubMed

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  3. Ion source metal-arc fault current protection circuit

    SciTech Connect

    deVries, G.J.; Lietzke, A.F.; van Os, C.F.A.; Stearns, J.W. )

    1991-12-01

    Ion sources can be damaged by arcs between metallic components of the source if these arcs are permitted to last. The negative-biased low-work-function converter in a surface conversion negative ion source is especially susceptible to metal-arc breakdown damage. Here an electronic circuit for minimizing the damage caused by such an arc is described. The circuit uses a transistor switch and an inductor in series with the converter bias power supply to limit the damage during the metal-arc breakdown.

  4. Improvement to the signaling interface for CMOS pixel sensors

    NASA Astrophysics Data System (ADS)

    Shi, Zhan; Tang, Zhenan; Feng, Chong; Cai, Hong

    2016-10-01

    The development of the readout speed of CMOS pixel sensors (CPS) is motivated by the demanding requirements of future high energy physics (HEP) experiments. As the interface between CPS and the data acquisition (DAQ) system, which inputs clock from the DAQ system and outputs data from CPS, the signaling interface should also be improved in terms of data rates. Meanwhile, the power consumption of the signaling interface should be maintained as low as possible. Consequently, a reduced swing differential signaling (RSDS) driver was adopted instead of a low-voltage differential signaling (LVDS) driver to transmit data from CPS to the DAQ system. In order to increase the capability of data rates, a serial source termination technique was employed. A LVDS/RSDS receiver was employed for transmitting clock from the DAQ system to CPS. A new method of generating hysteresis and a special current comparator were used to achieve a higher speed with lower power consumption. The signaling interface was designed and submitted for fabrication in a 0.18 μm CMOS image sensor (CIS) process. Measurement results indicate that the RSDS driver and the LVDS receiver can operate correctly at a data rate of 2 Gb/s with a power consumption of 19.1 mW.

  5. Single photon detection and localization accuracy with an ebCMOS camera

    NASA Astrophysics Data System (ADS)

    Cajgfinger, T.; Dominjon, A.; Barbier, R.

    2015-07-01

    The CMOS sensor technologies evolve very fast and offer today very promising solutions to existing issues facing by imaging camera systems. CMOS sensors are very attractive for fast and sensitive imaging thanks to their low pixel noise (1e-) and their possibility of backside illumination. The ebCMOS group of IPNL has produced a camera system dedicated to Low Light Level detection and based on a 640 kPixels ebCMOS with its acquisition system. After reminding the principle of detection of an ebCMOS and the characteristics of our prototype, we confront our camera to other imaging systems. We compare the identification efficiency and the localization accuracy of a point source by four different photo-detection devices: the scientific CMOS (sCMOS), the Charge Coupled Device (CDD), the Electron Multiplying CCD (emCCD) and the Electron Bombarded CMOS (ebCMOS). Our ebCMOS camera is able to identify a single photon source in less than 10 ms with a localization accuracy better than 1 μm. We report as well efficiency measurement and the false positive identification of the ebCMOS camera by identifying more than hundreds of single photon sources in parallel. About 700 spots are identified with a detection efficiency higher than 90% and a false positive percentage lower than 5. With these measurements, we show that our target tracking algorithm can be implemented in real time at 500 frames per second under a photon flux of the order of 8000 photons per frame. These results demonstrate that the ebCMOS camera concept with its single photon detection and target tracking algorithm is one of the best devices for low light and fast applications such as bioluminescence imaging, quantum dots tracking or adaptive optics.

  6. The Speedster-EXD - A New Event-Triggered Hybrid CMOS X-ray Detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher; Falcone, Abe; Prieskorn, Zach; Burrows, David

    2015-04-01

    We present the characterization of a new event driven x-ray hybrid CMOS detector developed by Penn State University in collaboration with Teledyne Imaging Sensors. Hybrid CMOS detectors currently have many advantages over CCDs including lower susceptibility to radiation damage, lower power consumption, and faster read-out time to avoid pile-up. The Speedster-EXD hybrid CMOS detector has many new features that improve upon the previous generation of detectors including two new in-pixel features that reduce noise from known noise sources: (1) a low-noise, high-gain CTIA amplifier to eliminate interpixel capacitance crosstalk and (2) in-pixel CDS subtraction to reduce kTC noise. The most exciting new feature of the Speedster-EXD is an in-pixel comparator that enables read out of only the pixels which contain signal from an x-ray event. The comparator threshold can be set by the user so that only pixels with signal above the set threshold are read out. This comparator feature can increase effective frame rate by orders of magnitude. We present the read noise, dark current, interpixel capacitance, energy resolution, and gain variation measurements of two Speedster-EXD detectors.

  7. Prospective energy sources and their comparison with current supplies

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, B. V.

    1980-10-01

    The comparative physical-technical and economic characteristics of renewable energy sources are analyzed. The significant advantages of wind energy for future use over oil, gas, and coal are demonstrated. Costs of wind electrical energy are compared in the U.S., Denmark, and the U.S.S.R.

  8. The source of O+ in the storm time ring current

    NASA Astrophysics Data System (ADS)

    Kistler, L. M.; Mouikis, C. G.; Spence, H. E.; Menz, A. M.; Skoug, R. M.; Funsten, H. O.; Larsen, B. A.; Mitchell, D. G.; Gkioulidou, M.; Wygant, J. R.; Lanzerotti, L. J.

    2016-06-01

    A stretched and compressed geomagnetic field occurred during the main phase of a geomagnetic storm on 1 June 2013. During the storm the Van Allen Probes spacecraft made measurements of the plasma sheet boundary layer and observed large fluxes of O+ ions streaming up the field line from the nightside auroral region. Prior to the storm main phase there was an increase in the hot (>1 keV) and more isotropic O+ ions in the plasma sheet. In the spacecraft inbound pass through the ring current region during the storm main phase, the H+ and O+ ions were significantly enhanced. We show that this enhanced inner magnetosphere ring current population is due to the inward adiabatic convection of the plasma sheet ion population. The energy range of the O+ ion plasma sheet that impacts the ring current most is found to be from ~5 to 60 keV. This is in the energy range of the hot population that increased prior to the start of the storm main phase, and the ion fluxes in this energy range only increase slightly during the extended outflow time interval. Thus, the auroral outflow does not have a significant impact on the ring current during the main phase. The auroral outflow is transported to the inner magnetosphere but does not reach high enough energies to affect the energy density. We conclude that the more energetic O+ that entered the plasma sheet prior to the main phase and that dominates the ring current is likely from the cusp.

  9. An improved equivalent simulation model for CMOS integrated Hall plates.

    PubMed

    Xu, Yue; Pan, Hong-Bin

    2011-01-01

    An improved equivalent simulation model for a CMOS-integrated Hall plate is described in this paper. Compared with existing models, this model covers voltage dependent non-linear effects, geometrical effects, temperature effects and packaging stress influences, and only includes a small number of physical and technological parameters. In addition, the structure of this model is relatively simple, consisting of a passive network with eight non-linear resistances, four current-controlled voltage sources and four parasitic capacitances. The model has been written in Verilog-A hardware description language and it performed successfully in a Cadence Spectre simulator. The model's simulation results are in good agreement with the classic experimental results reported in the literature.

  10. An Improved Equivalent Simulation Model for CMOS Integrated Hall Plates

    PubMed Central

    Xu, Yue; Pan, Hong-Bin

    2011-01-01

    An improved equivalent simulation model for a CMOS-integrated Hall plate is described in this paper. Compared with existing models, this model covers voltage dependent non-linear effects, geometrical effects, temperature effects and packaging stress influences, and only includes a small number of physical and technological parameters. In addition, the structure of this model is relatively simple, consisting of a passive network with eight non-linear resistances, four current-controlled voltage sources and four parasitic capacitances. The model has been written in Verilog-A hardware description language and it performed successfully in a Cadence Spectre simulator. The model’s simulation results are in good agreement with the classic experimental results reported in the literature. PMID:22163955

  11. An efficient current-based logic cell model for crosstalk delay analysis

    NASA Astrophysics Data System (ADS)

    Nazarian, Shahin; Das, Debasish

    2013-04-01

    Logic cell modelling is an important component in the analysis and design of CMOS integrated circuits, mostly due to nonlinear behaviour of CMOS cells with respect to the voltage signal at their input and output pins. A current-based model for CMOS logic cells is presented, which can be used for effective crosstalk noise and delta delay analysis in CMOS VLSI circuits. Existing current source models are expensive and need a new set of Spice-based characterisation, which is not compatible with typical EDA tools. In this article we present Imodel, a simple nonlinear logic cell model that can be derived from the typical cell libraries such as NLDM, with accuracy much higher than NLDM-based cell delay models. In fact, our experiments show an average error of 3% compared to Spice. This level of accuracy comes with a maximum runtime penalty of 19% compared to NLDM-based cell delay models on medium-sized industrial designs.

  12. Low Temperature Heat Source Utilization Current and Advanced Technology

    SciTech Connect

    Anderson, James H. Jr.; Dambly, Benjamin W.

    1992-06-01

    Once a geothermal heat source has been identified as having the potential for development, and its thermal, physical, and chemical characteristics have been determined, a method of utilization must be decided upon. This compendium will touch upon some of these concerns, and hopefully will provide the reader with a better understanding of technologies being developed that will be applicable to geothermal development in East Africa, as well as other parts of the world. The appendices contain detailed reports on Down-the-Well Turbo Pump, The Vapor-Turbine Cycle for Geothermal Power Generation, Heat Exchanger Design for Geothermal Power Plants, and a Feasibility Study of Combined Power and Water Desalting Plant Using Hot Geothermal Water. [DJE-2005

  13. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

    PubMed

    Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

    2014-07-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  14. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    NASA Astrophysics Data System (ADS)

    Esposito, M.; Anaxagoras, T.; Konstantinidis, A. C.; Zheng, Y.; Speller, R. D.; Evans, P. M.; Allinson, N. M.; Wells, K.

    2014-07-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  15. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    NASA Astrophysics Data System (ADS)

    Bronuzzi, J.; Mapelli, A.; Moll, M.; Sallese, J. M.

    2016-08-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set in full depletion. In a first step, Synopsys Sentaurus TCAD is used to evaluate the soundness of this technique for interface traps characterization such as it may happen in bonded interfaces. Next, an analytical model is developed in details to give a better insight into the physics behind the TCT for interface layers. Further, this can be used as a simple tool to evidence what are the relevant parameters influencing the TCT signal and to set the basis for preliminary characterizations.

  16. A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices

    NASA Astrophysics Data System (ADS)

    Haiyun, Huang; Dejun, Wang; Wenbo, Li; Yue, Xu; Huibin, Qin; Yongcai, Hu

    2012-08-01

    A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure, only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources. It completely considers the following effects: non-linear conductivity, geometry dependence of sensitivity, temperature drift, lateral diffusion, and junction field effect. The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator. The simulation results are in good accordance with the classic experimental results reported in the literature.

  17. Solar quiet day ionospheric source current in the West African region

    NASA Astrophysics Data System (ADS)

    Obiekezie, Theresa N.; Okeke, Francisca N.

    2013-05-01

    The Solar Quiet (Sq) day source current were calculated using the magnetic data obtained from a chain of 10 magnetotelluric stations installed in the African sector during the French participation in the International Equatorial Electrojet Year (IEEY) experiment in Africa. The components of geomagnetic field recorded at the stations from January-December in 1993 during the experiment were separated into the source and (induced) components of Sq using Spherical Harmonics Analysis (SHA) method. The range of the source current was calculated and this enabled the viewing of a full year's change in the source current system of Sq.

  18. Solar quiet day ionospheric source current in the West African region.

    PubMed

    Obiekezie, Theresa N; Okeke, Francisca N

    2013-05-01

    The Solar Quiet (Sq) day source current were calculated using the magnetic data obtained from a chain of 10 magnetotelluric stations installed in the African sector during the French participation in the International Equatorial Electrojet Year (IEEY) experiment in Africa. The components of geomagnetic field recorded at the stations from January-December in 1993 during the experiment were separated into the source and (induced) components of Sq using Spherical Harmonics Analysis (SHA) method. The range of the source current was calculated and this enabled the viewing of a full year's change in the source current system of Sq. PMID:25685434

  19. Improved Signal Chains for Readout of CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

    2009-01-01

    An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

  20. A Novel Current Angle Control Scheme in a Current Source Inverter Fed Permanent Magnet Synchronous Motor Drive for Automotive Applications

    SciTech Connect

    Tang, Lixin; Su, Gui-Jia

    2011-01-01

    This paper describes a novel speed control scheme to operate a current source inverter (CSI) driven surface-mounted permanent magnet synchronous machine (SPMSM) for hybrid electric vehicles (HEVs) applications. The idea is to use the angle of the current vector to regulate the rotor speed while keeping the two dc-dc converter power switches on all the time to boost system efficiency. The effectiveness of the proposed scheme was verified with a 3 kW CSI-SPMSM drive prototype.

  1. Reconfigurable RF CMOS Circuit for Cognitive Radio

    NASA Astrophysics Data System (ADS)

    Masu, Kazuya; Okada, Kenichi

    Cognitive radio and/or SDR (Software Defined Radio) inherently requires multi-band and multi standard wireless circuit. The circuit is implemented based on Si CMOS technology. In this article, the recent progress of Si RF CMOS is described and the reconfigurable RF CMOS circuit which was proposed by the authors is introduced. At the present and in the future, several kind of Si CMOS technology can be used for RF CMOS circuit implementation. The realistic RF CMOS circuit implementation toward cognitive and/or SDR is discussed.

  2. CMOS-compatible photonic devices for single-photon generation

    NASA Astrophysics Data System (ADS)

    Xiong, Chunle; Bell, Bryn; Eggleton, Benjamin J.

    2016-09-01

    Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal-oxide-semiconductor (CMOS)-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon) and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  3. Discontinuity interaction and anomalous source models in through transmission eddy current testing

    SciTech Connect

    Mergelas, B.J.; Atherton, D.L.

    1996-01-01

    Growing interest in the detection of external, axially aligned stress corrosion cracks in ferromagnetic oil and gas transmission pipelines, has prompted a detailed investigation of discontinuity interactions in remote field eddy current (RFEC) testing. Experimental measurements and numerical modeling were undertaken to study discontinuity interactions in a single through-wall transmission geometry for ferromagnetic and nonferromagnetic pipes. Anomalous source models have been introduced in order to explain the responses of axial discontinuities to circumferential eddy currents or circumferential AC magnetic fields. In nonferromagnetic material, discontinuity responses may be modeled by two types of anomalous eddy current sources. In ferromagnetic materials, an anomalous magnetization source is useful for explaining discontinuity response.

  4. Large area CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Turchetta, R.; Guerrini, N.; Sedgwick, I.

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  5. High gain CMOS image sensor design and fabrication on SOI and bulk technology

    NASA Astrophysics Data System (ADS)

    Zhang, Weiquan

    2000-12-01

    The CMOS imager is now competing with the CCD imager, which still dominates the electronic imaging market. By taking advantage of the mature CMOS technology, the CMOS imager can integrate AID converters, digital signal processing (DSP) and timing control circuits on the same chip. This low cost and high-density integration solution to the image capture is the strong driving force in industry. Silicon on insulator (SOI) is considered as the coming mainstream technology. It challenges the current bulk CMOS technology because of its reduced power consumption, high speed, radiation hardness etc. Moving the CMOS imager from the bulk to the SOI substrate will benefit from these intrinsic advantages. In addition, the blooming and the cross-talk between the pixels of the sensor array can be ideally eliminated, unlike those on the bulk technology. Though there are many advantages to integrate CMOS imager on SOI, the problem is that the top silicon film is very thin, such as 2000Å. Many photons can just pass through this layer without being absorbed. A good photo-detector on SOI is critical to integrate SOI CMOS imagers. In this thesis, several methods to make photo-detectors on SOI substrate are investigated. A floating gate MOSFET on SOI substrate, operating in its lateral bipolar mode, is photon sensitive. One step further, the SOI MOSFET gate and body can be tied together. The positive feedback between the body and gate enables this device have a high responsivity. A similar device can be found on the bulk CMOS technology: the gate-well tied PMOSFET. A 32 x 32 CMOS imager is designed and characterized using such a device as the light-sensing element. I also proposed the idea of building hybrid active pixels on SOI substrate. Such devices are fabricated and characterized. The work here represents my contribution on the CMOS imager, especially moving the CMOS imager onto the SOI substrate.

  6. Design and characterization of avalanche photodiodes in submicron CMOS technologies

    NASA Astrophysics Data System (ADS)

    Pancheri, L.; Bendib, T.; Dalla Betta, G.-F.; Stoppa, D.

    2014-03-01

    The fabrication of Avalanche Photodiodes (APDs) in CMOS processes can be exploited in several application domains, including telecommunications, time-resolved optical detection and scintillation detection. CMOS integration allows the realization of systems with a high degree of parallelization which are competitive with hybrid solutions in terms of cost and complexity. In this work, we present a linear-mode APD fabricated in a 0.15μm process, and report its gain and noise characterization. The experimental observations can be accurately predicted using Hayat dead-space noise model. Device simulations based on dead-space model are then used to discuss the current status and the perspectives for the integration of high-performance low-noise devices in standard CMOS processes.

  7. High-speed polysilicon CMOS photodetector for telecom and datacom

    NASA Astrophysics Data System (ADS)

    Atabaki, Amir H.; Meng, Huaiyu; Alloatti, Luca; Mehta, Karan K.; Ram, Rajeev J.

    2016-09-01

    Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow ("zero-change" CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysilicon is demonstrated with a strong electric field to enable efficient photo-carrier extraction and high-speed operation. This photodetector has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.

  8. Operation and biasing for single device equivalent to CMOS

    DOEpatents

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  9. Simulation of dark current and dark current-induced background photons in the Thomson scattering X-ray source

    NASA Astrophysics Data System (ADS)

    Zheng, Lianmin; Du, Yingchao; Huang, Wenhui; Tang, Chuanxiang

    2015-11-01

    A model of dark current generation in the photocathode radio-frequency (RF) gun is established in the Thomson scattering X-ray source, and dark current transport and losses along the beamline are simulated. A velocity bunching cavity is added between the RF gun and the first linac to achieve the longitudinal compression of the photoelectron bunches. Given the longitudinal acceleration and the transverse focusing of the bunching cavity, the dark current electrons with bunching are approximately three times more than those without bunching, and this condition aggravates the harm to the operation of the photoinjector. Numerous dark current electrons around the electron-laser interaction section hit against the pipe inner wall and two laser focusing mirrors, producing a large number of background photons. A simulation of the bremsstrahlung process using an MCNP code is presented, showing that the background photon yield is less than 2.1% of the scattering photon yield, which is acceptable for our application.

  10. Four-dimensional ultrasound current source density imaging of a dipole field

    NASA Astrophysics Data System (ADS)

    Wang, Z. H.; Olafsson, R.; Ingram, P.; Li, Q.; Qin, Y.; Witte, R. S.

    2011-09-01

    Ultrasound current source density imaging (UCSDI) potentially transforms conventional electrical mapping of excitable organs, such as the brain and heart. For this study, we demonstrate volume imaging of a time-varying current field by scanning a focused ultrasound beam and detecting the acoustoelectric (AE) interaction signal. A pair of electrodes produced an alternating current distribution in a special imaging chamber filled with a 0.9% NaCl solution. A pulsed 1 MHz ultrasound beam was scanned near the source and sink, while the AE signal was detected on remote recording electrodes, resulting in time-lapsed volume movies of the alternating current distribution.

  11. Letter Report on 500 nA Pulsed Current from Field Ionization Source

    SciTech Connect

    Ellsworth, Jennifer L.

    2013-12-12

    We recently produced a milestone 500 nA of pulsed current using 40 Ir field ionizer electrodes in our ion source. In conclusion, we have produced the milestone pulsed current of 500 nA using 40 electrochemically etched iridium tips in a field ionization source. The pulsed current output is repeatable and scales as expected with gas fill pressure and bias voltage. We expect these current will be sufficient to produce neutral yields of 1∙107 DT n/s.

  12. Measurements of Si hybrid CMOS x-ray detector characteristics

    NASA Astrophysics Data System (ADS)

    Bongiorno, Stephen D.; Falcone, Abe D.; Burrows, David N.; Cook, Robert; Bai, Yibin; Farris, Mark

    2009-08-01

    The development of Hybrid CMOS Detectors (HCDs) for X-Ray telescope focal planes will place them in contention with CCDs on future satellite missions due to their faster frame rates, flexible readout scenarios, lower power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However their bucket-brigade readout architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels with low power, on-chip multiplexer electronics in a random access fashion. Faster frame rates achieved with multi-output readout design will allow the next generation's larger effective area telescopes to observe bright sources free of pileup. Radiation damaged lattice sites effect a single pixel instead of an entire row. Random access, multi-output readout will allow for novel readout modes such as simultaneous bright-source-fast/whole-chip-slow readout. In order for HCDs to be useful as X-Ray detectors, they must show noise and energy resolution performance similar to CCDs while retaining advantages inherent to HCDs. We will report on readnoise, conversion gain, and energy resolution measurements of an X-Ray enhanced Teledyne HAWAII-1RG (H1RG) HCD and describe techniques of H1RG data reduction.

  13. CMOS Integrated Carbon Nanotube Sensor

    SciTech Connect

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-05-23

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  14. Monolithic CMOS imaging x-ray spectrometers

    NASA Astrophysics Data System (ADS)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  15. A BiCMOS integrated charge to amplitude converter

    SciTech Connect

    Gallin-Martel, L.; Pouxe, J.; Rossetto, O.

    1996-12-31

    This paper describes a fast two channel gated charge to amplitude converter (QAC) which has been designed with the 1.2 {mu}m BiCMOS technology from AMS (Austria Mikro Systeme). It can integrate fast negative impulse currents up to 100 mA. Associated with an audio 18 bit low cost ADC, it can easily be used to make a 12 to 13 bit QDC. The problems of current to current conversion, pedestal and offset stability are discussed.

  16. A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

    NASA Technical Reports Server (NTRS)

    Tripp, John S.; Daniels, Taumi S.

    1990-01-01

    The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

  17. Spin current source based on a quantum point contact with local spin-orbit interaction

    SciTech Connect

    Nowak, M. P.; Szafran, B.

    2013-11-11

    Proposal for construction of a source of spin-polarized current based on quantum point contact (QPC) with local spin-orbit interaction is presented. We show that spin-orbit interaction present within the narrowing acts like a spin filter. The spin polarization of the current is discussed as a function of the Fermi energy and the width of the QPC.

  18. Current Source Based on H-Bridge Inverter with Output LCL Filter

    NASA Astrophysics Data System (ADS)

    Blahnik, Vojtech; Talla, Jakub; Peroutka, Zdenek

    2015-09-01

    The paper deals with a control of current source with an LCL output filter. The controlled current source is realized as a single-phase inverter and output LCL filter provides low ripple of output current. However, systems incorporating LCL filters require more complex control strategies and there are several interesting approaches to the control of this type of converter. This paper presents the inverter control algorithm, which combines model based control with a direct current control based on resonant controllers and single-phase vector control. The primary goal is to reduce the current ripple and distortion under required limits and provides fast and precise control of output current. The proposed control technique is verified by measurements on the laboratory model.

  19. Precision current control for quantum cascade lasers as flight calibration sources

    NASA Astrophysics Data System (ADS)

    Hansen, Stewart M.

    A space-grade-equivalent precision current controller for quantum cascade lasers (QCLs) is presented. This current controller design will enable constant wave (CW) or pulsed mode operation of QCL devices as calibration sources in a space environment. One major source of sensitivity in current controllers is temperature variation across the electronics board. This design integrates some methods used by Pacific Northwest National Laboratory (PNNL) to compensate for these sensitivites. An uncertainty analysis of the key components of the space-grade-equivialent current controller was performed to estimate changes in QCL output power due to a change of 1°C. The performed uncertainty analysis shows that the design has the capability to control the current to within the 0.1% output power stability goal with a change of +/-10°C in the precision current controller electronics.

  20. Progress and future developments of high current ion source for neutral beam injector in the ASIPP

    SciTech Connect

    Hu, Chundong; Xie, Yahong Xie, Yuanlai; Liu, Sheng; Liu, Zhimin; Xu, Yongjian; Liang, Lizhen; Sheng, Peng; Jiang, Caichao

    2015-04-08

    A high current hot cathode bucket ion source, which based on the US long pulse ion source is developed in Institute of Plasma Physics, Chinese Academy of Sciences. The ion source consists of a bucket plasma generator with multi-pole cusp fields and a set of tetrode accelerator with slit apertures. So far, four ion sources are developed and conditioned on the ion source test bed. 4 MW hydrogen beam with beam energy of 80 keV is extracted. In Aug. 2013, EAST NBI 1 with two ion source installed on the EAST, and achieved H-mode plasma with NBI injection for the first time. In order to achieve stable long pulse operation of high current ion source and negative ion source research, the RF ion source with 200 mm diameter and 120 mm depth driver is designed and developed. The first RF plasma generated with 2 kW power of 1 MHz frequency. More of the RF plasma tests and negative source relative research need to do in the future.

  1. A Fast Greedy Sparse Method of Current Sources Reconstruction for Ventricular Torsion Detection

    NASA Astrophysics Data System (ADS)

    Bing, Lu; Jiang, Shiqin; Chen, Mengpei; Zhao, Chen; Grönemeyer, D.; Hailer, B.; Van Leeuwen, P.

    2015-09-01

    A fast greedy sparse (FGS) method of cardiac equivalent current sources reconstruction is developed for non-invasive detection and quantitative analysis of individual left ventricular torsion. The cardiac magnetic field inverse problem is solved based on a distributed source model. The analysis of real 61-channel magnetocardiogram (MCG) data demonstrates that one or two dominant current source with larger strength can be identified efficiently by the FGS algorithm. Then, the left ventricle torsion during systole is examined on the basis of x, y and z coordination curves and angle change of reconstructed dominant current sources. The advantages of this method are non-invasive, visible, with higher sensitivity and resolution. It may enable the clinical detection of cardiac systolic and ejection dysfunction.

  2. Current Situation for Management of Disused Sealed Radioactive Sources in Japan - 13025

    SciTech Connect

    Kusama, Keiji; Miyamoto, Yoichi

    2013-07-01

    As for the Sealed Radioactive Source currently used in Japan, many of them are imported from overseas. The U.S., Canada, Germany, the Netherlands, Belgium and Czech Republic are the main exporting States. Many of disused sealed radioactive sources are being returned to exporting States. The sealed radioactive sources which cannot be returned to exporting States are appropriately kept in the domestic storage facility. So, there are not main problem on the long term management of disused sealed radioactive sources in Japan. However, there are some difficulties on repatriate. One is reservation of a means of transport. The sea mail which conveys radioactive sources owing to reduction of movement of international cargo is decreasing in number. And there is a denial of shipment. Other one is that the manufacturer has already resigned from the work and cannot return disused sealed radioactive sources, or a manufacturer cannot specify and disused sources cannot be returned. The disused sealed radioactive source which cannot be repatriated is a little in term of radioactivity. As for the establishment of national measure of final disposal facility for disused sealed radioactive sources, in Japan, it is not yet installed with difficulty. Since there are many countries for which installation of a final disposal facility for disused sealed radioactive sources is difficult, the source manufacture country should respond positively to return the source which was manufactured and sold in the past. (authors)

  3. Development of CMOS integrated circuits

    NASA Technical Reports Server (NTRS)

    Bertino, F.; Feller, A.; Greenhouse, J.; Lombardi, T.; Merriam, A.; Noto, R.; Ozga, S.; Pryor, R.; Ramondetta, P.; Smith, A.

    1979-01-01

    Report documents life cycles of two custom CMOS integrated circuits: (1) 4-bit multiplexed register with shift left and shift right capabilities, and (2) dual 4-bit registers. Cycles described include conception as logic diagrams through design, fabrication, testing, and delivery.

  4. RAMPING UP THE SNS BEAM CURRENT WITH THE LBNL BASELINE H- SOURCE

    SciTech Connect

    Stockli, Martin P; Han, Baoxi; Murray Jr, S N; Newland, Denny J; Pennisi, Terry R; Santana, Manuel; Welton, Robert F

    2009-01-01

    Over the last two years the Spallation Neutron Source (SNS) has ramped up the repetition rate, pulse length, and the beam current to reach 540 kW, which has challenged many subsystems including the H- source designed and built by Lawrence Berkeley National Laboratory (LBNL). This paper discusses the major modifications of the H- source implemented to consistently and routinely output the beam current required by the SNS beam power ramp up plan. At this time, 32 mA LINAC beam current are routinely produced, which meets the requirement for 690 kW planned for end of 2008. In June 2008, a 14-day production run used 37 mA, which is close to the 38 mA required for 1.44 MW. A medium energy beam transport (MEBT) beam current of 46 mA was demonstrated on September 2, 2008.

  5. Repetitive Adjustment to Estimate the Electric Current Sources in a Nerve Fiber with Magnetic Field Measurement

    NASA Astrophysics Data System (ADS)

    Hayami, Takehito; Mishima, Yukuo; Hiwaki, Osamu

    Magnetic field measuring equipment provides us the way to examine the active position of a peripheral nerve without contact or invasion. To develop a process to estimate the position precisely, simulation study of the magnetic field induced by a myelinated nerve fiber was executed. The electric current sources around the active position of a nerve fiber can be approximated as a pair of electric current dipoles, which represent depolarization and repolarization respectively. Therefore the current sources to estimate from the detected pattern of the magnetic field were modeled as a pair of electric current dipoles. A repetitive adjustment process was proposed as an effective method to find the appropriate positions of the dipoles as the sources of the magnetic fields.

  6. Simulation of Series Active and Passive Power Filter Combination System to Mitigate Current Source Harmonics

    NASA Astrophysics Data System (ADS)

    Yusof, Yushaizad; Rahim, Nasrudin Abd.

    2009-08-01

    This paper discusses a combination three phase system of series active power filter and passive power filter used to mitigate current source harmonics produced by a three phase diode rectifier with capacitive loads. A control method based on synchronous reference frame (SRF) is implemented to compensate for the current harmonics. Computer simulation and modelling of the combined filter system is carried out using Matlab/Simulink Power System Blockset (PSB) software. The single tuned passive power filters suppress 5th and 7th order current harmonics, while the series active power filter acts as a harmonic isolator between the source and load. Hence, the proposed system performs very well in mitigating source current harmonics to the level that comply the harmonic standard such as IEEE 519-1992.

  7. The differential Howland current source with high signal to noise ratio for bioimpedance measurement system

    SciTech Connect

    Liu, Jinzhen; Li, Gang; Lin, Ling; Qiao, Xiaoyan; Wang, Mengjun; Zhang, Weibo

    2014-05-15

    The stability and signal to noise ratio (SNR) of the current source circuit are the important factors contributing to enhance the accuracy and sensitivity in bioimpedance measurement system. In this paper we propose a new differential Howland topology current source and evaluate its output characters by simulation and actual measurement. The results include (1) the output current and impedance in high frequencies are stabilized after compensation methods. And the stability of output current in the differential current source circuit (DCSC) is 0.2%. (2) The output impedance of two current circuits below the frequency of 200 KHz is above 1 MΩ, and below 1 MHz the output impedance can arrive to 200 KΩ. Then in total the output impedance of the DCSC is higher than that of the Howland current source circuit (HCSC). (3) The SNR of the DCSC are 85.64 dB and 65 dB in the simulation and actual measurement with 10 KHz, which illustrates that the DCSC effectively eliminates the common mode interference. (4) The maximum load in the DCSC is twice as much as that of the HCSC. Lastly a two-dimensional phantom electrical impedance tomography is well reconstructed with the proposed HCSC. Therefore, the measured performance shows that the DCSC can significantly improve the output impedance, the stability, the maximum load, and the SNR of the measurement system.

  8. Representation of bioelectric current sources using Whitney elements in the finite element method

    NASA Astrophysics Data System (ADS)

    Oguz Tanzer, I.; Järvenpää, Seppo; Nenonen, Jukka; Somersalo, Erkki

    2005-07-01

    Bioelectric current sources of magneto- and electroencephalograms (MEG, EEG) are usually modelled with discrete delta-function type current dipoles, despite the fact that the currents in the brain are naturally continuous throughout the neuronal tissue. In this study, we represent bioelectric current sources in terms of Whitney-type elements in the finite element method (FEM) using a tetrahedral mesh. The aim is to study how well the Whitney elements can reproduce the potential and magnetic field patterns generated by a point current dipole in a homogeneous conducting sphere. The electric potential is solved for a unit sphere model with isotropic conductivity and magnetic fields are calculated for points located on a cap outside the sphere. The computed potential and magnetic field are compared with analytical solutions for a current dipole. Relative difference measures between the FEM and analytical solutions are less than 1%, suggesting that Whitney elements as bioelectric current sources are able to produce the same potential and magnetic field patterns as the point dipole sources.

  9. The differential Howland current source with high signal to noise ratio for bioimpedance measurement system.

    PubMed

    Liu, Jinzhen; Qiao, Xiaoyan; Wang, Mengjun; Zhang, Weibo; Li, Gang; Lin, Ling

    2014-05-01

    The stability and signal to noise ratio (SNR) of the current source circuit are the important factors contributing to enhance the accuracy and sensitivity in bioimpedance measurement system. In this paper we propose a new differential Howland topology current source and evaluate its output characters by simulation and actual measurement. The results include (1) the output current and impedance in high frequencies are stabilized after compensation methods. And the stability of output current in the differential current source circuit (DCSC) is 0.2%. (2) The output impedance of two current circuits below the frequency of 200 KHz is above 1 MΩ, and below 1 MHz the output impedance can arrive to 200 KΩ. Then in total the output impedance of the DCSC is higher than that of the Howland current source circuit (HCSC). (3) The SNR of the DCSC are 85.64 dB and 65 dB in the simulation and actual measurement with 10 KHz, which illustrates that the DCSC effectively eliminates the common mode interference. (4) The maximum load in the DCSC is twice as much as that of the HCSC. Lastly a two-dimensional phantom electrical impedance tomography is well reconstructed with the proposed HCSC. Therefore, the measured performance shows that the DCSC can significantly improve the output impedance, the stability, the maximum load, and the SNR of the measurement system.

  10. Modulated CMOS camera for fluorescence lifetime microscopy.

    PubMed

    Chen, Hongtao; Holst, Gerhard; Gratton, Enrico

    2015-12-01

    Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) is a fast and accurate method to measure the fluorescence lifetime of entire images. However, the complexity and high costs involved in construction of such a system limit the extensive use of this technique. PCO AG recently released the first luminescence lifetime imaging camera based on a high frequency modulated CMOS image sensor, QMFLIM2. Here we tested and provide operational procedures to calibrate the camera and to improve the accuracy using corrections necessary for image analysis. With its flexible input/output options, we are able to use a modulated laser diode or a 20 MHz pulsed white supercontinuum laser as the light source. The output of the camera consists of a stack of modulated images that can be analyzed by the SimFCS software using the phasor approach. The nonuniform system response across the image sensor must be calibrated at the pixel level. This pixel calibration is crucial and needed for every camera settings, e.g. modulation frequency and exposure time. A significant dependency of the modulation signal on the intensity was also observed and hence an additional calibration is needed for each pixel depending on the pixel intensity level. These corrections are important not only for the fundamental frequency, but also for the higher harmonics when using the pulsed supercontinuum laser. With these post data acquisition corrections, the PCO CMOS-FLIM camera can be used for various biomedical applications requiring a large frame and high speed acquisition. PMID:26500051

  11. Challenges of nickel silicidation in CMOS technologies

    SciTech Connect

    Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet; Baumann, Frieder; Klymko, Nancy; Nummy, Karen; Sun, Bing; Jordan-Sweet, Jean; Yu, Jian; Zhu, Frank; Narasimha, Shreesh; Chudzik, Michael

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  12. Modulated CMOS camera for fluorescence lifetime microscopy.

    PubMed

    Chen, Hongtao; Holst, Gerhard; Gratton, Enrico

    2015-12-01

    Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) is a fast and accurate method to measure the fluorescence lifetime of entire images. However, the complexity and high costs involved in construction of such a system limit the extensive use of this technique. PCO AG recently released the first luminescence lifetime imaging camera based on a high frequency modulated CMOS image sensor, QMFLIM2. Here we tested and provide operational procedures to calibrate the camera and to improve the accuracy using corrections necessary for image analysis. With its flexible input/output options, we are able to use a modulated laser diode or a 20 MHz pulsed white supercontinuum laser as the light source. The output of the camera consists of a stack of modulated images that can be analyzed by the SimFCS software using the phasor approach. The nonuniform system response across the image sensor must be calibrated at the pixel level. This pixel calibration is crucial and needed for every camera settings, e.g. modulation frequency and exposure time. A significant dependency of the modulation signal on the intensity was also observed and hence an additional calibration is needed for each pixel depending on the pixel intensity level. These corrections are important not only for the fundamental frequency, but also for the higher harmonics when using the pulsed supercontinuum laser. With these post data acquisition corrections, the PCO CMOS-FLIM camera can be used for various biomedical applications requiring a large frame and high speed acquisition.

  13. Damage effect on CMOS detector irradiated by single-pulse laser

    NASA Astrophysics Data System (ADS)

    Guo, Feng; Zhu, Rongzhen; Wang, Ang; Cheng, Xiang'ai

    2013-09-01

    Imaging systems are widespread observation tools used to fulfill various functions such as recognition, detection and identification. These devices such as CMOS and CCD can be damaged by laser. It is very important to study the damage mechanism of CMOS and CCD. Previous studies focused on the interference and damage of CCD. There were only a few researches on the interaction of CMOS and the laser. In this paper, using a 60ns, 1064 nm single-pulse laser to radiate the front illuminated CMOS detector, the typical experiment phenomena were observed and the corresponding energy density thresholds were measured. According to the experiment phenomena, hard damage process of CMOS can be divided into 3 stages. Based on the structure and working principle of CMOS, studying the damage mechanism of 3 stages by theoretical analysis, point damage was caused by the increase in leakage current due to structural defects resulting from thermal effects, half black line damage and black lines cross damage were caused by signal interruption due to that the device circuit fuses were cut. Enhancing the laser energy density, the damaged area expanded. Even if the laser energy density reached 1.95 J/cm2, black lines has covered most of the detector pixels, the detector still not completely lapsed, the undamaged area can imaging due to that pixels of CMOS were separated with each other. Experiments on CMOS by laser pulses at the wavelength of 1064 nm and the pulse duration in 25ps was carried out, then the thresholds with different pulse durations were measured and compared. Experiments on CMOS by fs pulsed laser at the frequency of 1 Hz, 10 Hz and 1000 Hz were carried out, respectively, the results showed that a high-repetition-rate laser was easier to damage CMOS compared to single-shot laser.

  14. Dynamical changes of ion current distribution for a Penning discharge source using a Langmuir probe array.

    PubMed

    Li, M; Xiang, W; Xiao, K X; Chen, L

    2012-02-01

    A paralleled plate electrode and a 9-tip Langmuir probe array located 1 mm behind the extraction exit of a cold cathode Penning ion source are employed to measure the total current and the dynamical changes of the ion current in the 2D profile, respectively. Operation of the ion source by 500 V DC power supply, the paralleled plate electrode and the Langmuir probe array are driven by a bias voltage ranging from -200 V to 200 V. The dependence of the total current and the dynamical changes of the ion current in the 2D profile are presented at the different bias voltage. The experimental results show that the distribution of ion current is axial symmetry and approximate a unimodal distribution.

  15. Conical Current Sheets in a Source-Surface Model of the Heliosphere

    NASA Astrophysics Data System (ADS)

    Schulz, M.

    2007-12-01

    Different methods of modeling the coronal and heliospheric magnetic field are conveniently visualized and intercompared by applying them to ideally axisymmetric field models. Thus, for example, a dipolar B field with its moment parallel to the Sun's rotation axis leads to a flat heliospheric current sheet. More general solar B fields (still axisymmetric about the solar rotation axis for simplicity) typically lead to cone-shaped current sheets beyond the source surface (and presumably also in MHD models). As in the dipolar case [Schulz et al., Solar Phys., 60, 83-104, 1978], such conical current sheets can be made realistically thin by taking the source surface to be non-spherical in a way that reflects the underlying structure of the Sun's main B field. A source surface that seems to work well in this respect [Schulz, Ann. Geophysicae, 15, 1379-1387, 1997] is a surface of constant F = (1/r)kB, where B is the scalar strength of the Sun's main magnetic field and k (~ 1.4) is a shape parameter. This construction tends to flatten the source surface in regions where B is relatively weak. Thus, for example, the source surface for a dipolar B field is shaped somewhat like a Rugby football, whereas the source surface for an axisymmetric quadrupolar B field is similarly elongated but somewhat flattened (as if stuffed into a cone) at mid-latitudes. A linear combination of co-axial dipolar and quadrupolar B fields generates a somewhat pear-shaped (but still convex) source surface. If the region surrounded by the source surface is regarded as current-free, then the source surface itself should be (as nearly as possible) an equipotential surface for the corresponding magnetic scalar potential (expanded, for example, in spherical harmonics). The solar wind should then flow not quite radially, but rather in a straight line along the outward normal to the source surface, and the heliospheric B field should follow a corresponding generalization of Parker's spiral [Levine et al

  16. A HIGH CURRENT DENSITY LI+ ALUMINO-SILICATE ION SOURCE FOR TARGET HEATING EXPERIMENTS

    SciTech Connect

    Roy, Prabir K.; Greenway, Wayne G.; Kwan, Joe W.; Seidl, Peter A.; Waldron, William L.

    2011-03-23

    The NDCX-II accelerator for target heating experiments has been designed to use a large diameter ({approx_equal} 10.9 cm) Li{sup +} doped alumino-silicate source with a pulse duration of 0.5 {micro}s, and beam current of {approx_equal} 93 mA. Characterization of a prototype lithium alumino-silicate sources is presented. Using 6.35mm diameter prototype emitters (coated on a {approx_equal} 75% porous tungsten substrate), at a temperature of {approx_equal} 1275 C, a space-charge limited Li{sup +} beam current density of {approx_equal} 1 mA/cm{sup 2} was measured. At higher extraction voltage, the source is emission limited at around {approx_equal} 1.5 mA/cm{sup 2}, weakly dependent on the applied voltage. The lifetime of the ion source is {approx_equal} 50 hours while pulsing the extraction voltage at 2 to 3 times per minute. Measurements show that the life time of the ion source does not depend only on beam current extraction, and lithium loss may be dominated by neutral loss or by evaporation. The life time of a source is around {ge} 10 hours in a DC mode extraction, and the extracted charge is {approx_equal} 75% of the available Li in the sample. It is inferred that pulsed heating may increase the life time of a source.

  17. Design and Implementation of A CMOS Light Pulse Receiver Cell Array for Spatial Optical Communications

    PubMed Central

    Sarker, Md. Shakowat Zaman; Itoh, Shinya; Hamai, Moeta; Takai, Isamu; Andoh, Michinori; Yasutomi, Keita; Kawahito, Shoji

    2011-01-01

    A CMOS light pulse receiver (LPR) cell for spatial optical communications is designed and evaluated by device simulations and a prototype chip implementation. The LPR cell consists of a pinned photodiode and four transistors. It works under sub-threshold region of a MOS transistor and the source terminal voltage which responds to the logarithm of the photo current are read out with a source follower circuit. For finding the position of the light spot on the focal plane, an image pixel array is embedded on the same plane of the LPR cell array. A prototype chip with 640 × 240 image pixels and 640 × 240 LPR cells is implemented with 0.18 μm CMOS technology. A proposed model of the transient response of the LPR cell agrees with the result of the device simulations and measurements. Both imaging at 60 fps and optical communication at the carrier frequency of 1 MHz are successfully performed. The measured signal amplitude and the calculation results of photocurrents show that the spatial optical communication up to 100 m is feasible using a 10 × 10 LED array. PMID:22319398

  18. Design and implementation of a CMOS light pulse receiver cell array for spatial optical communications.

    PubMed

    Sarker, Md Shakowat Zaman; Itoh, Shinya; Hamai, Moeta; Takai, Isamu; Andoh, Michinori; Yasutomi, Keita; Kawahito, Shoji

    2011-01-01

    A CMOS light pulse receiver (LPR) cell for spatial optical communications is designed and evaluated by device simulations and a prototype chip implementation. The LPR cell consists of a pinned photodiode and four transistors. It works under sub-threshold region of a MOS transistor and the source terminal voltage which responds to the logarithm of the photo current are read out with a source follower circuit. For finding the position of the light spot on the focal plane, an image pixel array is embedded on the same plane of the LPR cell array. A prototype chip with 640 × 240 image pixels and 640 × 240 LPR cells is implemented with 0.18 μm CMOS technology. A proposed model of the transient response of the LPR cell agrees with the result of the device simulations and measurements. Both imaging at 60 fps and optical communication at the carrier frequency of 1 MHz are successfully performed. The measured signal amplitude and the calculation results of photocurrents show that the spatial optical communication up to 100 m is feasible using a 10 × 10 LED array.

  19. A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

    NASA Astrophysics Data System (ADS)

    Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

    2016-05-01

    A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate-source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base-emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from -40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is -31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

  20. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    PubMed

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

  1. Beam extraction and high stability operation of high current electron cyclotron resonance proton ion source

    NASA Astrophysics Data System (ADS)

    Roychowdhury, P.; Mishra, L.; Kewlani, H.; Patil, D. S.; Mittal, K. C.

    2014-03-01

    A high current electron cyclotron resonance proton ion source is designed and developed for the low energy high intensity proton accelerator at Bhabha Atomic Research Centre. The plasma discharge in the ion source is stabilized by minimizing the reflected microwave power using four stub auto tuner and magnetic field. The optimization of extraction geometry is performed using PBGUNS code by varying the aperture, shape, accelerating gap, and the potential on the electrodes. While operating the source, it was found that the two layered microwave window (6 mm quartz plate and 2 mm boron nitride plate) was damaged (a fine hole was drilled) by the back-streaming electrons after continuous operation of the source for 3 h at beam current of 20-40 mA. The microwave window was then shifted from the line of sight of the back-streaming electrons and located after the water-cooled H-plane bend. In this configuration the stable operation of the high current ion source for several hours is achieved. The ion beam is extracted from the source by biasing plasma electrode, puller electrode, and ground electrode to +10 to +50 kV, -2 to -4 kV, and 0 kV, respectively. The total ion beam current of 30-40 mA is recorded on Faraday cup at 40 keV of beam energy at 600-1000 W of microwave power, 800-1000 G axial magnetic field and (1.2-3.9) × 10-3 mbar of neutral hydrogen gas pressure in the plasma chamber. The dependence of beam current on extraction voltage, microwave power, and gas pressure is investigated in the range of operation of the ion source.

  2. Beam extraction and high stability operation of high current electron cyclotron resonance proton ion source

    SciTech Connect

    Roychowdhury, P. Mishra, L.; Kewlani, H.; Mittal, K. C.; Patil, D. S.

    2014-03-15

    A high current electron cyclotron resonance proton ion source is designed and developed for the low energy high intensity proton accelerator at Bhabha Atomic Research Centre. The plasma discharge in the ion source is stabilized by minimizing the reflected microwave power using four stub auto tuner and magnetic field. The optimization of extraction geometry is performed using PBGUNS code by varying the aperture, shape, accelerating gap, and the potential on the electrodes. While operating the source, it was found that the two layered microwave window (6 mm quartz plate and 2 mm boron nitride plate) was damaged (a fine hole was drilled) by the back-streaming electrons after continuous operation of the source for 3 h at beam current of 20–40 mA. The microwave window was then shifted from the line of sight of the back-streaming electrons and located after the water-cooled H-plane bend. In this configuration the stable operation of the high current ion source for several hours is achieved. The ion beam is extracted from the source by biasing plasma electrode, puller electrode, and ground electrode to +10 to +50 kV, −2 to −4 kV, and 0 kV, respectively. The total ion beam current of 30–40 mA is recorded on Faraday cup at 40 keV of beam energy at 600–1000 W of microwave power, 800–1000 G axial magnetic field and (1.2–3.9) × 10{sup −3} mbar of neutral hydrogen gas pressure in the plasma chamber. The dependence of beam current on extraction voltage, microwave power, and gas pressure is investigated in the range of operation of the ion source.

  3. A Differential CMOS Common-Gate LNA Linearized by Cross-Coupled Post Distortion Technique

    NASA Astrophysics Data System (ADS)

    Guo, Benqing; Yang, Guomin; Bin, Xiexian

    2014-05-01

    A linearized differential common-gate CMOS low noise amplifier is proposed. The linearity is improved by a cross-coupled post distortion technique, employing auxiliary PMOS transistors in weak inversion region to cancel the third-order nonlinear currents of common-gate LNA and impair the second-order nonlinear currents of that. The negative conductance characteristic of cross-coupled auxiliary PMOS transistors improves the gain while the resulted NF is little affected. Furthermore, noise contribution and linearity deterioration from the cascode stage is eliminated by an inductor resonating with the parasitic capacitance observed at the source net of the cascode transistor. The LNA implemented in a 0.18 μm CMOS technology demonstrates that IIP3 and gain have about 8.2 dB and 1.4 dB improvements in the designed frequency band, respectively. The noise figure of 3.4 dB is obtained with a power dissipation of 6.8 mW under a 1.8 V power supply.

  4. Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

    PubMed Central

    Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

    2010-01-01

    This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

  5. On the calculation of magnetic fields based on multipole modeling of focal biological current sources.

    PubMed Central

    Nolte, G; Curio, G

    1997-01-01

    Spatially restricted biological current distributions, like the primary neuronal response in the human somatosensory cortex evoked by electric nerve stimulation, can be described adequately by a current multipole expansion. Here analytic formulas are derived for computing magnetic fields induced by current multipoles in terms of an nth-order derivative of the dipole field. The required differential operators are given in closed form for arbitrary order. The concept is realized in different forms for an expansion of the scalar as well as the dyadic Green's function, the latter allowing for separation of those multipolar source components that are electrically silent but magnetically detectable. The resulting formulas are generally applicable for current sources embedded in arbitrarily shaped volume conductors. By using neurophysiologically relevant source parameters, examples are provided for a spherical volume conductor with an analytically given dipole field. An analysis of the signal-to-noise ratio for multipole coefficients up to the octapolar term indicates that the lateral extent of cortical current sources can be detected by magnetoencephalographic recordings. PMID:9284293

  6. Current Tracking Control of Voltage Source PWM Inverters Using Adaptive Digital Signal Processing

    NASA Astrophysics Data System (ADS)

    Fukuda, Shoji; Furukawa, Yuya

    An active filter (AF) is required to have a high control capability of tracking a time-varying current reference. However, a steady-state current error always exists if a conventional proportional and integral (PI) regulator is used because the current reference varies in time. This paper proposes the application of adaptive digital signal processing (ADSP) to the current control of voltage source PWM inverters. ADSP does not require any additional hardware. It can automatically minimize the mean square-error. Since the processing time available by a computer is limited, ADSP cannot eliminate higher order harmonics but can eliminate lower order harmonics such as 5th to 17th. Experimental results demonstrate that ADSP is useful for improving the reference tracking performance of voltage source inverters.

  7. The R and D progress of 4 MW EAST-NBI high current ion source

    SciTech Connect

    Xie, Yahong Hu, Chundong; Liu, Sheng; Xu, Yongjian; Liang, Lizhen; Xie, Yuanlai; Sheng, Peng; Jiang, Caichao; Liu, Zhimin

    2014-02-15

    A high current ion source, which consists of the multi-cusp bucket plasma generator and tetrode accelerator with multi-slot apertures, is developed and tested for the Experimental Advanced Superconducting Tokamak neutral beam injector. Three ion sources are tested on the test bed with arc power of 80 kW, beam voltage of 80 keV, and beam power of 4 MW. The arc regulation technology with Langmuir probes is employed for the long pulse operation of ion source, and the long pulse beam of 50 keV @ 15.5 A @ 100 s and 80 keV @ 52A @ 1s are extracted, respectively.

  8. The magnetospheric disturbance ring current as a source for probing the deep earth electrical conductivity

    USGS Publications Warehouse

    Campbell, W.H.

    1990-01-01

    Two current rings have been observed in the equatorial plane of the earth at times of high geomagnetic activity. An eastward current exists between about 2 and 3.5 earth radii (Re) distant, and a larger, more variable companion current exists between about 4 and 9 Re. These current regions are loaded during geomagnetic substorms. They decay, almost exponentially, after the cessation of the particle influx that attends the solar wind disturbance. This review focuses upon characteristics needed for intelligent use of the ring current as a source for induction probing of the earth's mantle. Considerable difficulties are found with the assumption that Dst is a ring-current index. ?? 1990 Birkha??user Verlag.

  9. Influence of the electron source distribution on field-aligned currents

    NASA Technical Reports Server (NTRS)

    Bruening, K.; Goertz, C. K.

    1985-01-01

    The field-aligned current density above a discrete auroral arc has been deduced from the downward electron flux and magnetic field measurements onboard the rocket Porcupine flight 4. Both measurements show that the field-aligned current density is, in spite of decreasing peak energies towards the edge of the arc, about 4 times higher there than in the center of the arc. This can be explained by using the single particle description for an anisotropic electron source distribution.

  10. A Current Source Method For t(sub q) Measurement of Fast Switching Thyristors

    NASA Technical Reports Server (NTRS)

    Niedra, Janis M.

    2006-01-01

    A current source driven circuit has been constructed to measure the turn-off time (t(sub q)) of fast-switching SiC thyristors. This circuit operates from a single power supply and a dual channel pulse generator to provide adjustment of forward current, magnitude and duration of reverse applied voltage, and rate of rise of reapplied forward voltage. Values of t(sub q) down to 100 ns can be resolved.

  11. Fast pulsed operation of a small non-radioactive electron source with continuous emission current control.

    PubMed

    Cochems, P; Kirk, A T; Bunert, E; Runge, M; Goncalves, P; Zimmermann, S

    2015-06-01

    Non-radioactive electron sources are of great interest in any application requiring the emission of electrons at atmospheric pressure, as they offer better control over emission parameters than radioactive electron sources and are not subject to legal restrictions. Recently, we published a simple electron source consisting only of a vacuum housing, a filament, and a single control grid. In this paper, we present improved control electronics that utilize this control grid in order to focus and defocus the electron beam, thus pulsing the electron emission at atmospheric pressure. This allows short emission pulses and excellent stability of the emitted electron current due to continuous control, both during pulsed and continuous operations. As an application example, this electron source is coupled to an ion mobility spectrometer. Here, the pulsed electron source allows experiments on gas phase ion chemistry (e.g., ion generation and recombination kinetics) and can even remove the need for a traditional ion shutter.

  12. Fast pulsed operation of a small non-radioactive electron source with continuous emission current control

    SciTech Connect

    Cochems, P.; Kirk, A. T.; Bunert, E.; Runge, M.; Goncalves, P.; Zimmermann, S.

    2015-06-15

    Non-radioactive electron sources are of great interest in any application requiring the emission of electrons at atmospheric pressure, as they offer better control over emission parameters than radioactive electron sources and are not subject to legal restrictions. Recently, we published a simple electron source consisting only of a vacuum housing, a filament, and a single control grid. In this paper, we present improved control electronics that utilize this control grid in order to focus and defocus the electron beam, thus pulsing the electron emission at atmospheric pressure. This allows short emission pulses and excellent stability of the emitted electron current due to continuous control, both during pulsed and continuous operations. As an application example, this electron source is coupled to an ion mobility spectrometer. Here, the pulsed electron source allows experiments on gas phase ion chemistry (e.g., ion generation and recombination kinetics) and can even remove the need for a traditional ion shutter.

  13. Recent advances in high current vacuum arc ion sources for heavy ion fusion

    NASA Astrophysics Data System (ADS)

    Qi, Niansheng; Schein, Jochen; Prasad, Rahul R.; Krishnan, Mahadevan; Anders, Andre; Kwan, Joe; Brown, Ian

    2001-05-01

    For a heavy ion fusion induction linac driver, a source of heavy ions with charge states 1+-3+, ≈0.5 A current beams, ≈20 μs pulse widths and ˜10 Hz repetition rates is required. Thermionic sources have been the workhorse for the Heavy Ion Fusion (HIF) program to date, but suffer from heating problems for large areas and contamination. They are limited to low (contact) ionization potential elements and offer relatively low ion fluxes with a charge state limited to 1+. Gas injection sources suffer from partial ionization and deleterious neutral gas effects. The above shortcomings of the thermionic ion sources can be overcome by a vacuum arc ion source. The vacuum arc ion source is a good candidate for HIF applications. It is capable of providing ions of various elements and different charge states in short and long pulse bursts and high beam current density. Under a Phase-I STTR from DOE, the feasibility of the vacuum arc ion source for the HIF applications was investigated. We have modified an existing vacuum arc ion source at LBNL to produce a gadolinium ( A≈158) ion beam with >0.5 A beam current, 120 keV beam energy, ≈6 cm diameter extraction aperture and ≈20 μs pulse width. The average beam current density at the extraction grids was ≈17 mA/cm 2. We have measured that >85% Gd ions were in the 3+ charge state, the beam current fluctuation level (rms) was ≈3%, pulse-to-pulse variation of the beam (rms) was about 3%, the uniformity of the beam density over its 6 cm diameter was ⩾98% and the ion longitudinal energy spread was ⩽1%. Additional measurements were made to improve charge state purity by using other materials and employing an axial magnetic field close to the cathode. Yttrium ( A≈89), lead ( A≈207), and Ba ( A≈137) were tested at similar current parameters with Ba delivering nearly a pure charge state with >95% being in 2+ state. The results of the experiments indicate that the vacuum arc ion source is a good candidate for HIF

  14. Studies in High Current Density Ion Sources for Heavy Ion FusionApplications

    SciTech Connect

    Chacon-Golcher, E.

    2002-06-01

    This dissertation develops diverse research on small (diameter {approx} few mm), high current density (J {approx} several tens of mA/cm{sup 2}) heavy ion sources. The research has been developed in the context of a programmatic interest within the Heavy Ion Fusion (HIF) Program to explore alternative architectures in the beam injection systems that use the merging of small, bright beams. An ion gun was designed and built for these experiments. Results of average current density yield () at different operating conditions are presented for K{sup +} and Cs{sup +} contact ionization sources and potassium aluminum silicate sources. Maximum values for a K{sup +} beam of {approx}90 mA/cm{sup 2} were observed in 2.3 {micro}s pulses. Measurements of beam intensity profiles and emittances are included. Measurements of neutral particle desorption are presented at different operating conditions which lead to a better understanding of the underlying atomic diffusion processes that determine the lifetime of the emitter. Estimates of diffusion times consistent with measurements are presented, as well as estimates of maximum repetition rates achievable. Diverse studies performed on the composition and preparation of alkali aluminosilicate ion sources are also presented. In addition, this work includes preliminary work carried out exploring the viability of an argon plasma ion source and a bismuth metal vapor vacuum arc (MEVVA) ion source. For the former ion source, fast rise-times ({approx} 1 {micro}s), high current densities ({approx} 100 mA/cm{sup 2}) and low operating pressures (< 2 mtorr) were verified. For the latter, high but acceptable levels of beam emittance were measured ({var_epsilon}{sub n} {le} 0.006 {pi} mm {center_dot} mrad) although measured currents differed from the desired ones (I {approx} 5mA) by about a factor of 10.

  15. High-voltage CMOS detectors

    NASA Astrophysics Data System (ADS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-07-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented.

  16. Performance of CMOS ternary full adder at liquid nitrogen temperature

    NASA Astrophysics Data System (ADS)

    Srivastava, A.; Venkatapathy, K.

    We have designed, implemented and studied the performance at liquid nitrogen temperature (77 K) of a CMOS ternary full adder and its building blocks, the simple ternary inverter (STI), positive ternary inverter (PTI) and negative ternary inverter (NTI), and compared the corresponding performance at room temperature (300 K). The ternary full adder has been fabricated in 2 μm, n-well CMOS through MOSIS. In a ternary full adder, the basic building blocks, the PTI and NTI, have been developed using combinations of a CMOS inverter and transmission gate(s). There is close agreement between the simulated and measured voltage transfer characteristics and noise margins of ternary-valued devices. The measured transient times for the NTI, PTI and ternary full adder at 77 K show an improvement by a factor of ≈1.5-2.5 over the corresponding values at 300 K. The present design does not use linear resistors and depletion-mode MOSFETs to implement the ternary full adder and its building blocks, and is fully compatible with current CMOS technology.

  17. TID Simulation of Advanced CMOS Devices for Space Applications

    NASA Astrophysics Data System (ADS)

    Sajid, Muhammad

    2016-07-01

    This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

  18. CMOS output buffer wave shaper

    NASA Technical Reports Server (NTRS)

    Albertson, L.; Whitaker, S.; Merrell, R.

    1990-01-01

    As the switching speeds and densities of Digital CMOS integrated circuits continue to increase, output switching noise becomes more of a problem. A design technique which aids in the reduction of switching noise is reported. The output driver stage is analyzed through the use of an equivalent RLC circuit. The results of the analysis are used in the design of an output driver stage. A test circuit based on these techniques is being submitted to MOSIS for fabrication.

  19. Using CMOS image sensors to detect photons

    NASA Astrophysics Data System (ADS)

    Xu, Chenzhi; Tong, Xiaobo; Zhou, Xiang; Zheng, Xiaodong; Xu, Yunfei

    2010-05-01

    A research is carried out on the characteristics of CMOS (Complementary Metal-Oxide Semiconductor) image sensors. A CMOS image sensor is used to probe the fluorescence intensity of atoms or absorbed photons in order to measure the shape and atomicity density of Rb (Rubidium) cold-atom-cloud. A series of RGB data of images is obtained and the spectrum response curve of CMOS image sensor is deduced. After filtering out the noise of the pixel signals of CMOS image sensor, the number of photons received by every pixel of the CMOS image sensor is obtained. Compared with CCD camera, the CMOS image sensor has some advantages in measuring the properties of cold-atom-cloud,such as quick response, large sensory area, low cost, and so on.

  20. CMOS Imaging Device for Optical Imaging of Biological Activities

    NASA Astrophysics Data System (ADS)

    Shishido, Sanshiro; Oguro, Yasuhiro; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    In this paper, we propose a CMOS image sensor device placed on the brain surface or cerebral sulcus (Fig. 1). The device has a photo detector array where a single optical detector is usually used. The proposed imaging device enables the analysis which reflects a surface blood pattern in the observed area. It is also possible to improve effective sensitivity by image processing and to simplify the measurement system by the CMOS sensor device with on-chip light source. We describe the design details and characterization of proposed device. We also demonstrate detection of hemoglobin oxygenation level with external light source, imaging capability of biological activities, and image processing for sensitivity improvement is also realized.

  1. Langmuir probe diagnostics of plasma in high current electron cyclotron resonance proton ion source

    NASA Astrophysics Data System (ADS)

    Roychowdhury, P.; Kewlani, H.; Mishra, L.; Patil, D. S.; Mittal, K. C.

    2013-07-01

    A high current Electron Cyclotron Resonance (ECR) proton ion source has been developed for low energy high intensity proton accelerator at Bhabha Atomic Research Centre. Langmuir probe diagnostics of the plasma generated in this proton ion source is performed using Langmuir probe. The diagnostics of plasma in the ion source is important as it determines beam parameters of the ion source, i.e., beam current, emittance, and available species. The plasma parameter measurement in the ion source is performed in continuously working and pulsed mode using hydrogen as plasma generation gas. The measurement is performed in the ECR zone for operating pressure and microwave power range of 10-4-10-3 mbar and 400-1000 W. An automated Langmuir probe diagnostics unit with data acquisition system is developed to measure these parameters. The diagnostics studies indicate that the plasma density and plasma electron temperature measured are in the range 5.6 × 1010 cm-3 to 3.8 × 1011 cm-3 and 4-14 eV, respectively. Using this plasma, ion beam current of tens of mA is extracted. The variations of plasma parameters with microwave power, gas pressure, and radial location of the probe have been studied.

  2. Langmuir probe diagnostics of plasma in high current electron cyclotron resonance proton ion source

    SciTech Connect

    Roychowdhury, P.; Kewlani, H.; Mishra, L.; Mittal, K. C.; Patil, D. S.

    2013-07-15

    A high current Electron Cyclotron Resonance (ECR) proton ion source has been developed for low energy high intensity proton accelerator at Bhabha Atomic Research Centre. Langmuir probe diagnostics of the plasma generated in this proton ion source is performed using Langmuir probe. The diagnostics of plasma in the ion source is important as it determines beam parameters of the ion source, i.e., beam current, emittance, and available species. The plasma parameter measurement in the ion source is performed in continuously working and pulsed mode using hydrogen as plasma generation gas. The measurement is performed in the ECR zone for operating pressure and microwave power range of 10{sup −4}–10{sup −3} mbar and 400–1000 W. An automated Langmuir probe diagnostics unit with data acquisition system is developed to measure these parameters. The diagnostics studies indicate that the plasma density and plasma electron temperature measured are in the range 5.6 × 10{sup 10} cm{sup −3} to 3.8 × 10{sup 11} cm{sup −3} and 4–14 eV, respectively. Using this plasma, ion beam current of tens of mA is extracted. The variations of plasma parameters with microwave power, gas pressure, and radial location of the probe have been studied.

  3. Langmuir probe diagnostics of plasma in high current electron cyclotron resonance proton ion source.

    PubMed

    Roychowdhury, P; Kewlani, H; Mishra, L; Patil, D S; Mittal, K C

    2013-07-01

    A high current Electron Cyclotron Resonance (ECR) proton ion source has been developed for low energy high intensity proton accelerator at Bhabha Atomic Research Centre. Langmuir probe diagnostics of the plasma generated in this proton ion source is performed using Langmuir probe. The diagnostics of plasma in the ion source is important as it determines beam parameters of the ion source, i.e., beam current, emittance, and available species. The plasma parameter measurement in the ion source is performed in continuously working and pulsed mode using hydrogen as plasma generation gas. The measurement is performed in the ECR zone for operating pressure and microwave power range of 10(-4)-10(-3) mbar and 400-1000 W. An automated Langmuir probe diagnostics unit with data acquisition system is developed to measure these parameters. The diagnostics studies indicate that the plasma density and plasma electron temperature measured are in the range 5.6 × 10(10) cm(-3) to 3.8 × 10(11) cm(-3) and 4-14 eV, respectively. Using this plasma, ion beam current of tens of mA is extracted. The variations of plasma parameters with microwave power, gas pressure, and radial location of the probe have been studied.

  4. Nodal Analysis Optimization Based on the Use of Virtual Current Sources: A Powerful New Pedagogical Method

    ERIC Educational Resources Information Center

    Chatzarakis, G. E.

    2009-01-01

    This paper presents a new pedagogical method for nodal analysis optimization based on the use of virtual current sources, applicable to any linear electric circuit (LEC), regardless of its complexity. The proposed method leads to straightforward solutions, mostly arrived at by inspection. Furthermore, the method is easily adapted to computer…

  5. Unexpected Sources of Information in Industrial Relations: A Current Awareness Approach.

    ERIC Educational Resources Information Center

    Bagin, Katherine I.; Barry, Kevin P.

    1984-01-01

    Offers practical approach to locating and understanding sources of current information in industrial relations from four groups: non-profit, policy research associations; professional and trade associations; advocacy and lobby organizations; and private, profit-making agencies. A method for enriching library collection development and a new…

  6. A cookbook for building a high-current dimpled H– magnetron source for accelerators

    DOE PAGES

    Bollinger, Daniel S.; Karns, Patrick R.; Tan, Cheng -Yang

    2015-10-30

    A high-current (>50 mA) dimpled H– magnetron source has been built at Fermilab for supplying H– beam to the entire accelerator complex. Despite many decades of expertise with slit H– magnetron sources at Fermilab, we were faced with many challenges from the dimpled H– magnetron source, which needed to be overcome in order to make it operational. Dimpled H– sources for high-energy physics are not new: Brookhaven National Laboratory has operated a dimpled H- source for more than two decades. However, the transference of that experience to Fermilab took about two years because a cookbook for building this type ofmore » source did not exist and seemingly innocuous or undocumented choices had a huge impact on the success or failure for this type of source. Moreover, it is the goal of this paper to document the reasons for these choices and to present a cookbook for building and operating dimpled H– magnetron sources.« less

  7. Impairment of source memory in patients with obsessive-compulsive disorder: equivalent current dipole analysis.

    PubMed

    Kim, Young Youn; Roh, Ah Young; Yoo, So Young; Kang, Do-Hyung; Kwon, Jun Soo

    2009-01-30

    We examined memory performance and cortical source localization of old/new effects in a source memory task in obsessive-compulsive disorder (OCD) patients by employing an equivalent current dipole (ECD) model using EEG and a realistic head model. Event-related potentials (ERPs) were recorded while 14 OCD patients and 14 age-, sex-, handedness-, and educational level-matched healthy control subjects performed recognition tasks for spoken words (items) or for the voice of the speaker of spoken words (sources). In the item memory task, both groups showed ERP old/new effects at 300-700 ms. In the source memory task, the controls showed ERP old/new effects at 400-700 ms, whereas the OCD patients did not. Compared with the controls, the OCD patients showed significantly lower source accuracy and prolonged reaction times to the old words with accurate voice judgments. There were no differences between the OCD and control groups with regard to the locations of the ERP generators elicited by source correct and correct rejection conditions. The OCD patients showed significantly altered hemispheric asymmetry of ECD power in the frontal lobe during source memory retrieval, compared with the controls. These results indicate that OCD patients have preserved item memory about content, but impaired source memory about context.

  8. RF Sources for the ITER Ion Cyclotron Heating and Current Drive System

    SciTech Connect

    Hosea, J.; Brunkhorst, C.; Fredd, E.; Goulding, R. H.; Goulding, R. H.; Greenough, N.; Kung, C.; Rasmussen, D. A.; Swain, D. W.; Wilson, J. R.

    2005-10-04

    The RF source requirements for the ITER ion cyclotron (IC) heating and current drive system are very challenging ? 20 MW CW power into an antenna load with a VSWR of up to 2 over the frequency range of 35-65 MHz. For the two present antenna designs under consideration, 8 sources providing 2.5 MW each are to be employed. For these sources, the outputs of two final power amplifiers (FPAs), using the high power CPI 4CM2500KG tube, are combined with a 180? hybrid combiner to easily meet the ITER IC source requirements ? 2.5 MW is supplied at a VSWR of 2 at ? 70% of the maximum tube power available in class B operation. The cylindrical cavity configuration for the FPAs is quite compact so that the 8 combined sources fit into the space allocated at the ITER site with room to spare. The source configuration is described in detail and its projected operating power curves are presented. Although the CPI tube has been shown to be stable under high power operating conditions on many facilities, a test of the combined FPA source arrangement is in preparation using existing high power 30 MHz amplifiers to assure that this configuration can be made robustly stable for all phases at a VSWR up to 2. The possibility of using 12 sources to feed a suitably modified antenna design is also discussed in the context of providing flexibility for specifying the final IC antenna design.

  9. The source altitude, electric current, and intrinsic brightness of terrestrial gamma ray flashes

    NASA Astrophysics Data System (ADS)

    Cummer, Steven A.; Briggs, Michael S.; Dwyer, Joseph R.; Xiong, Shaolin; Connaughton, Valerie; Fishman, Gerald J.; Lu, Gaopeng; Lyu, Fanchao; Solanki, Rahulkumar

    2014-12-01

    Many details of how thunderstorms generate terrestrial gamma ray flashes (TGFs) and other forms of high-energy radiation remain uncertain, including the basic question of where they are produced. We exploit the association of distinct low-frequency radio emissions with generation of terrestrial gamma ray flashes (TGFs) to directly measure for the first time the TGF source altitude. Analysis of two events reveals source altitudes of 11.8 ± 0.4 km and 11.9 ± 0.9 km. This places the source region in the interior of the thunderstorm between the two main charge layers and implies an intrinsic TGF brightness of approximately 1018 runaway electrons. The electric current in this nontraditional lightning process is found to be strong enough to drive nonlinear effects in the ionosphere, and in one case is comparable to the highest peak current lightning processes on the planet.

  10. Self-testable CMOS thermopile-based infrared imager

    NASA Astrophysics Data System (ADS)

    Charlot, Benoit; Parrain, F.; Mir, Salvador; Courtois, Bernard

    2001-04-01

    This paper describes a CMOS-compatible self-testable uncooled InfraRed (IR) imager that can be used in multiple applications such as overheating detection, night vision, and earth tracking for satellite positioning. The imager consists of an array of thermal pixels that sense an infrared radiation. Each pixel is implemented as a front-side bulk micromachined membrane suspended by four arms, each arm containing a thermopile made of Poly/Al thermocouples. The imager has a pixel self-test function that can be activated off-line in the field for validation and maintenance purposes, with an on-chip test signal generation that requires only slight modifications in the pixel design. The self-test of a pixel takes about 15 ms. The area overhead required by the test electronics does not imply any reduction of the pixel fill factor, since the electronics fits in the pixel silicon boundary. However, the additional self-test circuitry contributes to a small increase in the thermal conductance of a pixel due to the wiring of a heating resistor over the suspended arms. The self-test capability of the imager allows for a production test with a standard test equipment, without the need of special infrared sources and the associated optical equipment. A prototype with 8 X 8 pixels is currently in fabrication for validation of the self-test approach. In this prototype, each pixel occupies an area of 200 X 200 micrometer2, with a membrane size of 90 X 90 micrometer2 (fill factor of 0.2). Simulation results indicate a pixel thermal conductance of 22.6 (mu) W/K, giving a responsivity of 138 V/W, with a thermocouple Seebeck coefficient that has been measured at 248 (mu) V/K for the 0.6 micrometer CMOS technology used. The noise equivalent power (considering only Johnson noise in the thermopile) is calculated as 0.18 nW.H-1/2 with a detectivity of 5.03 X 107 cm.Hz1/2.W-1, in line with current state-of-the-art. Since the imager may need to measure irradiation intensities below 1(mu) W

  11. Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

    NASA Astrophysics Data System (ADS)

    Turchetta, R.; French, M.; Manolopoulos, S.; Tyndel, M.; Allport, P.; Bates, R.; O'Shea, V.; Hall, G.; Raymond, M.

    2003-03-01

    Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to tape. Because of the large number of pixels, data reduction is needed on the sensor itself or just outside. This brings in stringent requirements on the temporal noise as well as to the sensor uniformity, expressed as a Fixed Pattern Noise (FPN). A pixel architecture with an additional transistor is proposed. This architecture, coupled to correlated double sampling of the signal will allow cancellation of the two dominant noise sources, namely the reset or kTC noise and the FPN. A prototype has been designed in a standard 0.25 μm CMOS technology. It has also a structure for electrical calibration of the sensor. The prototype is functional and detailed tests are under way.

  12. Summary of current state nonpoint source control practices for forestry. Final report

    SciTech Connect

    Craig, J.; Parcher, M.A.; Wright, J.; Townsend, G.; Cannell, J.

    1993-08-01

    Forestry practices have been implicated by many states as a contributor to nonpoint source (NPS) pollution of streams, rivers, lakes, and other waterbodies. Many states, recognizing the forestry contribution to water pollution, have developed programs to address forestry NPS. The recent development of the Management Measures Guidance, as required by section 6217 of the Coastal Zone Reauthorization Amendments (CZARA), provided the motivation to develop a summary of the current state forestry NPS programs. The document provides a synopsis of the BMPs currently used by states to address the nonpoint source (NPS) impacts on water quality caused by forestry activities. Summaries of over 41 existing state BMP manuals or regulations that include BMPs are presented. The information presented in the document is intended to provide an increased understanding of the types of forestry activities commonly addressed in existing state NPS programs and to serve as a reference for the type and nature of BMPs included in current state BMP manuals.

  13. Passive radiation detection using optically active CMOS sensors

    NASA Astrophysics Data System (ADS)

    Dosiek, Luke; Schalk, Patrick D.

    2013-05-01

    Recently, there have been a number of small-scale and hobbyist successes in employing commodity CMOS-based camera sensors for radiation detection. For example, several smartphone applications initially developed for use in areas near the Fukushima nuclear disaster are capable of detecting radiation using a cell phone camera, provided opaque tape is placed over the lens. In all current useful implementations, it is required that the sensor not be exposed to visible light. We seek to build a system that does not have this restriction. While building such a system would require sophisticated signal processing, it would nevertheless provide great benefits. In addition to fulfilling their primary function of image capture, cameras would also be able to detect unknown radiation sources even when the danger is considered to be low or non-existent. By experimentally profiling the image artifacts generated by gamma ray and β particle impacts, algorithms are developed to identify the unique features of radiation exposure, while discarding optical interaction and thermal noise effects. Preliminary results focus on achieving this goal in a laboratory setting, without regard to integration time or computational complexity. However, future work will seek to address these additional issues.

  14. Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

    2009-01-01

    In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

  15. Hybrid CMOS SiPIN detectors as astronomical imagers

    NASA Astrophysics Data System (ADS)

    Simms, Lance Michael

    Charge Coupled Devices (CCDs) have dominated optical and x-ray astronomy since their inception in 1969. Only recently, through improvements in design and fabrication methods, have imagers that use Complimentary Metal Oxide Semiconductor (CMOS) technology gained ground on CCDs in scientific imaging. We are now in the midst of an era where astronomers might begin to design optical telescope cameras that employ CMOS imagers. The first three chapters of this dissertation are primarily composed of introductory material. In them, we discuss the potential advantages that CMOS imagers offer over CCDs in astronomical applications. We compare the two technologies in terms of the standard metrics used to evaluate and compare scientific imagers: dark current, read noise, linearity, etc. We also discuss novel features of CMOS devices and the benefits they offer to astronomy. In particular, we focus on a specific kind of hybrid CMOS sensor that uses Silicon PIN photodiodes to detect optical light in order to overcome deficiencies of commercial CMOS sensors. The remaining four chapters focus on a specific type of hybrid CMOS Silicon PIN sensor: the Teledyne Hybrid Visible Silicon PIN Imager (HyViSI). In chapters four and five, results from testing HyViSI detectors in the laboratory and at the Kitt Peak 2.1m telescope are presented. We present our laboratory measurements of the standard detector metrics for a number of HyViSI devices, ranging from 1k×1k to 4k×4k format. We also include a description of the SIDECAR readout circuit that was used to control the detectors. We then show how they performed at the telescope in terms of photometry, astrometry, variability measurement, and telescope focusing and guiding. Lastly, in the final two chapters we present results on detector artifacts such as pixel crosstalk, electronic crosstalk, and image persistence. One form of pixel crosstalk that has not been discussed elsewhere in the literature, which we refer to as Interpixel Charge

  16. Contact CMOS imaging of gaseous oxygen sensor array.

    PubMed

    Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

    2011-10-01

    We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3](2+)) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

  17. Contact CMOS imaging of gaseous oxygen sensor array

    PubMed Central

    Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

    2014-01-01

    We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

  18. Bipolar square-wave current source for transient electromagnetic systems based on constant shutdown time

    NASA Astrophysics Data System (ADS)

    Wang, Shilong; Yin, Changchun; Lin, Jun; Yang, Yu; Hu, Xueyan

    2016-03-01

    Cooperative work of multiple magnetic transmitting sources is a new trend in the development of transient electromagnetic system. The key is the bipolar current waves shutdown, concurrently in the inductive load. In the past, it was difficult to use the constant clamping voltage technique to realize the synchronized shutdown of currents with different peak values. Based on clamping voltage technique, we introduce a new controlling method with constant shutdown time. We use the rising time to control shutdown time and use low voltage power source to control peak current. From the viewpoint of the circuit energy loss, by taking the high-voltage capacitor bypass resistance and the capacitor of the passive snubber circuit into account, we establish the relationship between the rising time and the shutdown time. Since the switch is not ideal, we propose a new method to test the shutdown time by the low voltage, the high voltage and the peak current. Experimental results show that adjustment of the current rising time can precisely control the value of the clamp voltage. When the rising time is fixed, the shutdown time is unchanged. The error for shutdown time deduced from the energy consumption is less than 6%. The new controlling method on current shutdown proposed in this paper can be used in the cooperative work of borehole and ground transmitting system.

  19. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

    PubMed

    Yu, Cui; Liu, Hongmei; Ni, Wenbin; Gao, Nengyue; Zhao, Jianwei; Zhang, Haoli

    2011-02-28

    We designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify the connection position of the thiol group at one side, forming different electron transport routes. The electron transport routes besides the shortest one are defined as the cross channels. The simulation results indicate that electron transport through the cross channels is as efficient as that through the shortest one, since the conductance is weakly dependent on the distance. Thus, it is possible to connect the graphene with multiple leads, leading the graphene as a channel utilized in the graphene-based FETs in the mesoscopic system. When the conjugation of the cross channel is blocked, the junction conductance decreases dramatically. The differential conductance of the BA-1 is nearly 7 (54.57 μS) times as large as that of the BA-4 (7.35 μS) at zero bias. Therefore, the blocked graphene can be employed as the gate dielectric material in the top-gated graphene FET device, since the leakage current is small. The graphene-based field-effect transistors fabricated with a single layer of graphene as the channel and the blocked graphene as the gate dielectric material represent one way to overcome the problem of miniaturization which faces the new generation of transistors.

  20. Current source density correlates of cerebellar Golgi and Purkinje cell responses to tactile input

    PubMed Central

    Tahon, Koen; Wijnants, Mike; De Schutter, Erik

    2011-01-01

    The overall circuitry of the cerebellar cortex has been known for over a century, but the function of many synaptic connections remains poorly characterized in vivo. We used a one-dimensional multielectrode probe to estimate the current source density (CSD) of Crus IIa in response to perioral tactile stimuli in anesthetized rats and to correlate current sinks and sources to changes in the spike rate of corecorded Golgi and Purkinje cells. The punctate stimuli evoked two distinct early waves of excitation (at <10 and ∼20 ms) associated with current sinks in the granular layer. The second wave was putatively of corticopontine origin, and its associated sink was located higher in the granular layer than the first trigeminal sink. The distinctive patterns of granular-layer sinks correlated with the spike responses of corecorded Golgi cells. In general, Golgi cell spike responses could be linearly reconstructed from the CSD profile. A dip in simple-spike activity of coregistered Purkinje cells correlated with a current source deep in the molecular layer, probably generated by basket cell synapses, interspersed between sparse early sinks presumably generated by synapses from granule cells. The late (>30 ms) enhancement of simple-spike activity in Purkinje cells was characterized by the absence of simultaneous sinks in the granular layer and by the suppression of corecorded Golgi cell activity, pointing at inhibition of Golgi cells by Purkinje axon collaterals as a likely mechanism of late Purkinje cell excitation. PMID:21228303

  1. Neutron generator for BNCT based on high current ECR ion source with gyrotron plasma heating.

    PubMed

    Skalyga, V; Izotov, I; Golubev, S; Razin, S; Sidorov, A; Maslennikova, A; Volovecky, A; Kalvas, T; Koivisto, H; Tarvainen, O

    2015-12-01

    BNCT development nowadays is constrained by a progress in neutron sources design. Creation of a cheap and compact intense neutron source would significantly simplify trial treatments avoiding use of expensive and complicated nuclear reactors and accelerators. D-D or D-T neutron generator is one of alternative types of such sources for. A so-called high current quasi-gasdynamic ECR ion source with plasma heating by millimeter wave gyrotron radiation is suggested to be used in a scheme of D-D neutron generator in the present work. Ion source of that type was developed in the Institute of Applied Physics of Russian Academy of Sciences (Nizhny Novgorod, Russia). It can produce deuteron ion beams with current density up to 700-800 mA/cm(2). Generation of the neutron flux with density at the level of 7-8·10(10) s(-1) cm(-2) at the target surface could be obtained in case of TiD2 target bombardment with deuteron beam accelerated to 100 keV. Estimations show that it is enough for formation of epithermal neutron flux with density higher than 10(9) s(-1) cm(-2) suitable for BNCT. Important advantage of described approach is absence of Tritium in the scheme. First experiments performed in pulsed regime with 300 mA, 45 kV deuteron beam directed to D2O target demonstrated 10(9) s(-1) neutron flux. This value corresponds to theoretical estimations and proofs prospects of neutron generator development based on high current quasi-gasdynamic ECR ion source. PMID:26302662

  2. Neutron generator for BNCT based on high current ECR ion source with gyrotron plasma heating.

    PubMed

    Skalyga, V; Izotov, I; Golubev, S; Razin, S; Sidorov, A; Maslennikova, A; Volovecky, A; Kalvas, T; Koivisto, H; Tarvainen, O

    2015-12-01

    BNCT development nowadays is constrained by a progress in neutron sources design. Creation of a cheap and compact intense neutron source would significantly simplify trial treatments avoiding use of expensive and complicated nuclear reactors and accelerators. D-D or D-T neutron generator is one of alternative types of such sources for. A so-called high current quasi-gasdynamic ECR ion source with plasma heating by millimeter wave gyrotron radiation is suggested to be used in a scheme of D-D neutron generator in the present work. Ion source of that type was developed in the Institute of Applied Physics of Russian Academy of Sciences (Nizhny Novgorod, Russia). It can produce deuteron ion beams with current density up to 700-800 mA/cm(2). Generation of the neutron flux with density at the level of 7-8·10(10) s(-1) cm(-2) at the target surface could be obtained in case of TiD2 target bombardment with deuteron beam accelerated to 100 keV. Estimations show that it is enough for formation of epithermal neutron flux with density higher than 10(9) s(-1) cm(-2) suitable for BNCT. Important advantage of described approach is absence of Tritium in the scheme. First experiments performed in pulsed regime with 300 mA, 45 kV deuteron beam directed to D2O target demonstrated 10(9) s(-1) neutron flux. This value corresponds to theoretical estimations and proofs prospects of neutron generator development based on high current quasi-gasdynamic ECR ion source.

  3. A high speed, low power consumption LVDS interface for CMOS pixel sensors

    NASA Astrophysics Data System (ADS)

    Shi, Zhan; Tang, Zhenan; Tian, Yong; Pham, Hung; Valin, Isabelle; Jaaskelainen, Kimmo

    2015-01-01

    The use of CMOS Pixel Sensors (CPSs) offers a promising approach to the design of vertex detectors in High Energy Physics (HEP) experiments. As the CPS equipping the upgraded Solenoidal Tracker at RHIC (STAR) pixel detector, ULTIMATE perfectly illustrates the potential of CPSs for HEP applications. However, further development of CPSs with respect to readout speed is required to fulfill the readout time requirement of the next generation HEP detectors, such as the upgrade of A Large Ion Collider Experiment (ALICE) Inner Tracking System (ITS), the International Linear Collider (ILC), and the Compressed Baryonic Matter (CBM) vertex detectors. One actual limitation of CPSs is related to the speed of the Low-Voltage Differential Signaling (LVDS) circuitry implementing the interface between the sensor and the Data Acquisition (DAQ) system. To improve the transmission rate while keeping the power consumption at a low level, a source termination technique and a special current comparator were adopted for the LVDS driver and receiver, respectively. Moreover, hardening techniques are used. The circuitry was designed and submitted for fabrication in a 0.18-μm CMOS Image Sensor (CIS) process at the end of 2011. The test results indicated that the LVDS driver and receiver can operate properly at the data rate of 1.2 Gb/s with power consumption of 19.6 mW.

  4. CMOS preamplifier with high linearity and ultra low noise for x-ray spectroscopy

    SciTech Connect

    O`Connor, P.O.; Rehak, P.; Gramegna, G.; Corsi, F.; Marzocca, C.

    1996-12-31

    We present an ultra low noise charge preamplifier suitable for small capacitance (200M), low leakage current solid state detectors. A self adaptive bias circuit for the MOS feedback device establishes the static feedback resistance in the G{Omega} range while tracking the threshold variations and power supply and temperature fluctuations. The linearity of the gain versus input charge has been improved by means of a voltage divider between the output of the charge-sensitive amplifier and the source of the feedback transistor. With the preamplifier alone, we measure a room-temperature equivalent noise charge (ENC) of 9 e{sup -} rms at 12 usec shaping time. When coupled to a cooled detector a FWHM of 130 eV is obtained at 2.4 usec shaping, corresponding to an ENC of 16 e{sup -} rms. This is the best reported resolution obtained with a CMOS preamplifier. The circuit has good linearity (< 0.2%) up to 1.8 W. Since the preamplifier`s ENC is limited by flicker noise, we fabricated the circuit in two 1.2um CMOS technologies. Device measurements allow us to compare the 1/f noise behavior of each foundry. In addition to the preamplifiers, a 1 us shaper and a 50{Omega} output driver are included on the die.

  5. CMOS Hybrid Pixel Detectors for Scientific, Industrial and Medical Applications

    NASA Astrophysics Data System (ADS)

    Broennimann, Christian

    2009-03-01

    Crystallography is the principal technique for determining macromolecular structures at atomic resolution and uses advantageously the high intensity of 3rd generation synchrotron X-ray sources . Macromolecular crystallography experiments benefit from excellent beamline equipment, recent software advances and modern X-ray detectors. However, the latter do not take full advantage of the brightness of modern synchrotron sources. CMOS Hybrid pixel array detectors, originally developed for high energy physics experiments, meet these requirements. X-rays are recorded in single photon counting mode and data thus are stored digitally at the earliest possible stage. This architecture leads to several advantages over current detectors: No detector noise is added to the signal. Readout time is reduced to a few milliseconds. The counting rates are matched to beam intensities at protein crystallography beamlines at 3rd generation synchrotrons. The detector is not sensitive to X-rays during readout; therefore no mechanical shutter is required. The detector has a very sharp point spread function (PSF) of one pixel, which allows better resolution of adjacent reflections. Low energy X-rays can be suppressed by the comparator At the Paul Scherrer Institute (PSI) in Switzerland the first and largest array based on this technology was constructed: The Pilatus 6M detector. The detector covers an area of 43.1 x 44.8 cm2 , has 6 million pixels and is read out noise free in 3.7 ms. Since June 2007 the detector is in routine operation at the beamline 6S of the Swiss Light Source (SLS). The company DETCRIS Ltd, has licensed the technology from PSI and is commercially offering the PILATUS detectors. Examples of the wide application range of the detectors will be shown.

  6. CMOS Integrated Single Electron Transistor Electrometry (CMOS-SET) circuit design for nanosecond quantum-bit read-out.

    SciTech Connect

    Gurrieri, Thomas M.; Lilly, Michael Patrick; Carroll, Malcolm S.; Levy, James E.

    2008-08-01

    Novel single electron transistor (SET) read-out circuit designs are described. The circuits use a silicon SET interfaced to a CMOS voltage mode or current mode comparator to obtain a digital read-out of the state of the qubit. The design assumes standard submicron (0.35 um) CMOS SOI technology using room temperature SPICE models. Implications and uncertainties related to the temperature scaling of these models to 100mK operation are discussed. Using this technology, the simulations predict a read-out operation speed of approximately Ins and a power dissipation per cell as low as 2nW for single-shot read-out, which is a significant advantage over currently used radio frequency SET (RF-SET) approaches.

  7. TRIASSIC: the Time-Resolved Industrial Alpha-Source Scanning Induced Current microscope

    NASA Astrophysics Data System (ADS)

    Pallone, Arthur

    Time-resolved ion beam induced current (TRIBIC) microscopy yields useful information such as carrier mobility and lifetimes in semiconductors and defect locations in devices; however, traditional TRIBIC uses large, expensive particle accelerators that require specialized training to operate and maintain. The time-resolved industrial alpha-source scanning induced current (TRIASSIC) microscope transforms TRIBIC by replacing the particle accelerator facility with an affordable, tabletop instrument suitable for use in research and education at smaller colleges and universities. I will discuss the development of, successes with, setbacks to and future directions for TRIASSIC.

  8. Characterization and development of an event-driven hybrid CMOS x-ray detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher

    2015-06-01

    Hybrid CMOS detectors (HCD) have provided great benefit to the infrared and optical fields of astronomy, and they are poised to do the same for X-ray astronomy. Infrared HCDs have already flown on the Hubble Space Telescope and the Wide-Field Infrared Survey Explorer (WISE) mission and are slated to fly on the James Webb Space Telescope (JWST). Hybrid CMOS X-ray detectors offer low susceptibility to radiation damage, low power consumption, and fast readout time to avoid pile-up. The fast readout time is necessary for future high throughput X-ray missions. The Speedster-EXD X-ray HCD presented in this dissertation offers new in-pixel features and reduces known noise sources seen on previous generation HCDs. The Speedster-EXD detector makes a great step forward in the development of these detectors for future space missions. This dissertation begins with an overview of future X-ray space mission concepts and their detector requirements. The background on the physics of semiconductor devices and an explanation of the detection of X-rays with these devices will be discussed followed by a discussion on CCDs and CMOS detectors. Next, hybrid CMOS X-ray detectors will be explained including their advantages and disadvantages. The Speedster-EXD detector and its new features will be outlined including its ability to only read out pixels which contain X-ray events. Test stand design and construction for the Speedster-EXD detector is outlined and the characterization of each parameter on two Speedster-EXD detectors is detailed including read noise, dark current, interpixel capacitance crosstalk (IPC), and energy resolution. Gain variation is also characterized, and a Monte Carlo simulation of its impact on energy resolution is described. This analysis shows that its effect can be successfully nullified with proper calibration, which would be important for a flight mission. Appendix B contains a study of the extreme tidal disruption event, Swift J1644+57, to search for

  9. Fiber-optic current sensor with self-compensation of source wavelength changes.

    PubMed

    Müller, G M; Quan, W; Lenner, M; Yang, L; Frank, A; Bohnert, K

    2016-06-15

    We demonstrate a method for self-compensation of scale factor changes of an interferometric fiber-optic current sensor caused by source wavelength shifts, e.g., due to changes in source temperature or drive current. An adequately tailored fiber-optic retarder in the optical circuit introduces wavelength-dependent mixing of the orthogonal polarization modes of the sensor. The resulting change in scale factor balances the variation of the Faraday effect with wavelength. The wavelength dependence of the sensor is suppressed by more than an order of magnitude to <0.2% over wavelength spans of at least 10 nm around 1305 nm. The retarder is designed as an athermal device for operation between -40°C and 80°C. PMID:27304309

  10. Current progress and future prospects of the VITA based neutron source.

    PubMed

    Aleynik, V; Bashkirtsev, A; Kanygin, V; Kasatov, D; Kuznetsov, A; Makarov, A; Schudlo, I; Sorokin, I; Taskaev, S; Tiunov, M

    2014-06-01

    At the BINP, a pilot accelerator based epithermal neutron source is now in use. Most recent investigations on the facility are related with studying the dark current, X-ray radiation measuring, optimization of H(-)-beam injection and new gas stripping target calibrating. The results of these studies, ways of providing stability to the accelerator are presented and discussed, as well as the ways of creating the therapeutic beam and strategies of applying the facility for clinical use. PMID:24369890

  11. Measurements of beam current density and proton fraction of a permanent-magnet microwave ion source

    SciTech Connect

    Waldmann, Ole; Ludewigt, Bernhard

    2011-11-15

    A permanent-magnet microwave ion source has been built for use in a high-yield, compact neutron generator. The source has been designed to produce up to 100 mA of deuterium and tritium ions. The electron-cyclotron resonance condition is met at a microwave frequency of 2.45 GHz and a magnetic field strength of 87.5 mT. The source operates at a low hydrogen gas pressure of about 0.15 Pa. Hydrogen beams with a current density of 40 mA/cm{sup 2} have been extracted at a microwave power of 450 W. The dependence of the extracted proton beam fraction on wall materials and operating parameters was measured and found to vary from 45% for steel to 95% for boron nitride as a wall liner material.

  12. Obtaining evidence beyond the current "special arrangement sources." Interim final rule with request for comments.

    PubMed

    2014-06-12

    We are amending our regulations to state that we will obtain evidence from any appropriate source. Our current regulations provide that we will obtain information from "special arrangement sources'' for those infrequent situations when we are in a better position than our State agency partners to obtain evidence. Due to improved evidence collection through our increased use of health information technology (health IT), we are obtaining evidence electronically with increasing frequency. We expect that, over time, the electronic exchange of medical records will become our primary means for obtaining medical evidence. As we increase our use of health IT, the designation of "special arrangement sources'' will no longer adequately describe from whom we collect evidence.

  13. Nanosecond monolithic CMOS readout cell

    DOEpatents

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  14. CMOS foveal image sensor chip

    NASA Technical Reports Server (NTRS)

    Bandera, Cesar (Inventor); Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Xia, Shu (Inventor)

    2002-01-01

    A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

  15. Improved PHIP polarization using a precision, low noise, voltage controlled current source.

    PubMed

    Agraz, Jose; Grunfeld, Alexander; Cunningham, Karl; Li, Debiao; Wagner, Shawn

    2013-10-01

    Existing para-hydrogen induced polarization (PHIP) instrumentation relies on magnetic fields to hyperpolarize substances. These hyperpolarized substances have enhanced magnetic resonance imaging (MRI) signals over 10,000 fold, allowing for MRI at the molecular level. Required magnetic fields are generated by energizing a solenoid coil with current produced by a voltage controlled voltage source (VCVS), also known as a power supply. A VCVS lacks the current regulation necessary to keep magnetic field fluctuations to a minimum, which results in low PHIP polarization. A voltage controlled current source (VCCS) is an electric circuit that generates a steady flow of electrons proportional to an input voltage. A low noise VCCS provides the solenoid current flow regulation necessary to generate a stable static magnetic field (Bo). We discuss the design and implementation of a low noise, high stability, VCCS for magnetic field generation with minimum variations. We show that a precision, low noise, voltage reference driving a metal oxide semiconductor field effect transistor (MOSFET) based current sink, results in the current flow control necessary for generating a low noise and high stability Bo. In addition, this work: (1) compares current stability for ideal VCVS and VCCS models using transfer functions (TF), (2) develops our VCCS design's TF, (3) measures our VCCS design's thermal & 1/f noise, and (4) measures and compares hydroxyethyl-propionate (HEP) polarization obtained using a VCVS and our VCCS. The hyperpolarization of HEP was done using a PHIP instrument developed in our lab. Using our VCCS design, HEP polarization magnitude data show a statistically significant increase in polarization over using a VCVS. Circuit schematic, bill of materials, board layout, TF derivation, and Matlab simulations code are included as supplemental files.

  16. Improved PHIP polarization using a precision, low noise, voltage controlled current source

    NASA Astrophysics Data System (ADS)

    Agraz, Jose; Grunfeld, Alexander; Cunningham, Karl; Li, Debiao; Wagner, Shawn

    2013-10-01

    Existing para-hydrogen induced polarization (PHIP) instrumentation relies on magnetic fields to hyperpolarize substances. These hyperpolarized substances have enhanced magnetic resonance imaging (MRI) signals over 10,000 fold, allowing for MRI at the molecular level. Required magnetic fields are generated by energizing a solenoid coil with current produced by a voltage controlled voltage source (VCVS), also known as a power supply. A VCVS lacks the current regulation necessary to keep magnetic field fluctuations to a minimum, which results in low PHIP polarization. A voltage controlled current source (VCCS) is an electric circuit that generates a steady flow of electrons proportional to an input voltage. A low noise VCCS provides the solenoid current flow regulation necessary to generate a stable static magnetic field (Bo). We discuss the design and implementation of a low noise, high stability, VCCS for magnetic field generation with minimum variations. We show that a precision, low noise, voltage reference driving a metal oxide semiconductor field effect transistor (MOSFET) based current sink, results in the current flow control necessary for generating a low noise and high stability Bo. In addition, this work: (1) compares current stability for ideal VCVS and VCCS models using transfer functions (TF), (2) develops our VCCS design's TF, (3) measures our VCCS design's thermal & 1/f noise, and (4) measures and compares hydroxyethyl-propionate (HEP) polarization obtained using a VCVS and our VCCS. The hyperpolarization of HEP was done using a PHIP instrument developed in our lab. Using our VCCS design, HEP polarization magnitude data show a statistically significant increase in polarization over using a VCVS. Circuit schematic, bill of materials, board layout, TF derivation, and Matlab simulations code are included as supplemental files.

  17. Improved PHIP polarization using a precision, low noise, voltage controlled current source.

    PubMed

    Agraz, Jose; Grunfeld, Alexander; Cunningham, Karl; Li, Debiao; Wagner, Shawn

    2013-10-01

    Existing para-hydrogen induced polarization (PHIP) instrumentation relies on magnetic fields to hyperpolarize substances. These hyperpolarized substances have enhanced magnetic resonance imaging (MRI) signals over 10,000 fold, allowing for MRI at the molecular level. Required magnetic fields are generated by energizing a solenoid coil with current produced by a voltage controlled voltage source (VCVS), also known as a power supply. A VCVS lacks the current regulation necessary to keep magnetic field fluctuations to a minimum, which results in low PHIP polarization. A voltage controlled current source (VCCS) is an electric circuit that generates a steady flow of electrons proportional to an input voltage. A low noise VCCS provides the solenoid current flow regulation necessary to generate a stable static magnetic field (Bo). We discuss the design and implementation of a low noise, high stability, VCCS for magnetic field generation with minimum variations. We show that a precision, low noise, voltage reference driving a metal oxide semiconductor field effect transistor (MOSFET) based current sink, results in the current flow control necessary for generating a low noise and high stability Bo. In addition, this work: (1) compares current stability for ideal VCVS and VCCS models using transfer functions (TF), (2) develops our VCCS design's TF, (3) measures our VCCS design's thermal & 1/f noise, and (4) measures and compares hydroxyethyl-propionate (HEP) polarization obtained using a VCVS and our VCCS. The hyperpolarization of HEP was done using a PHIP instrument developed in our lab. Using our VCCS design, HEP polarization magnitude data show a statistically significant increase in polarization over using a VCVS. Circuit schematic, bill of materials, board layout, TF derivation, and Matlab simulations code are included as supplemental files. PMID:23988431

  18. A test of source-surface model predictions of heliospheric current sheet inclination

    NASA Technical Reports Server (NTRS)

    Burton, M. E.; Crooker, N. U.; Siscoe, G. L.; Smith, E. J.

    1994-01-01

    The orientation of the heliospheric current sheet predicted from a source surface model is compared with the orientation determined from minimum-variance analysis of International Sun-Earth Explorer (ISEE) 3 magnetic field data at 1 AU near solar maximum. Of the 37 cases analyzed, 28 have minimum variance normals that lie orthogonal to the predicted Parker spiral direction. For these cases, the correlation coefficient between the predicted and measured inclinations is 0.6. However, for the subset of 14 cases for which transient signatures (either interplanetary shocks or bidirectional electrons) are absent, the agreement in inclinations improves dramatically, with a correlation coefficient of 0.96. These results validate not only the use of the source surface model as a predictor but also the previously questioned usefulness of minimum variance analysis across complex sector boundaries. In addition, the results imply that interplanetary dynamics have little effect on current sheet inclination at 1 AU. The dependence of the correlation on transient occurrence suggests that the leading edge of a coronal mass ejection (CME), where transient signatures are detected, disrupts the heliospheric current sheet but that the sheet re-forms between the trailing legs of the CME. In this way the global structure of the heliosphere, reflected both in the source surface maps and in the interplanetary sector structure, can be maintained even when the CME occurrence rate is high.

  19. Enhancement of ion current from the TRIPS source by means of different electron donors

    NASA Astrophysics Data System (ADS)

    Gammino, S.; Ciavola, G.; Celona, L.; Torrisi, L.; Mascali, D.; Passarello, S.; Galatà, A.

    2006-03-01

    A series of measurements were carried out with the TRasco Intense Proton Source (TRIPS) to determine the effectiveness of different materials as electron donors. It is well known that the use of boron nitride (BN) disks inside the plasma chamber increases the current extracted from microwave discharge ion sources, generating additional electrons. In the past, one of the two disks was replaced by a 40μm Al2O3 coating over the extraction electrode, which gave some increase of current, but after less than 200h was heavily damaged. The tests here reported concern three different options: (a) thicker Al2O3 layer (100μm) deposited over the extraction electrode; a 1-mm-thick aluminium foil over which an alumina layer is deposited, inserted in the plasma chamber; a 5-mm-thick Al2O3 tube embedded in the plasma chamber of the TRIPS source (the outer diameter of the tube being slightly smaller than the inner diameter of the chamber). The tests were carried out in the same conditions as for magnetic field topology and only rf power and gas input were variable. Special attention was paid to the proton fraction. In fact, a higher proton fraction can be considered as a signature of the higher availability of electrons in the plasma. With the thick alumina tube not only was a better current and proton fraction observed but also a lower beam ripple and better stability.

  20. Design and characterization of the annular cathode high current pulsed electron beam source for circular components

    NASA Astrophysics Data System (ADS)

    Jiang, Wei; Wang, Langping; Wang, Xiaofeng

    2016-08-01

    In order to irradiate circular components with high current pulsed electron beam (HCPEB), an annular cathode based on carbon fiber bunches was designed and fabricated. Using an acceleration voltage of 25 kV, the maximum pulsed irradiation current and energy of this annular cathode can reach 7.9 kA and 300 J, respectively. The irradiation current density distribution of the annular cathode HCPEB source measured along the circumferential direction shows that the annular cathode has good emission uniformity. In addition, four 9310 steel substrates fixed uniformly along the circumferential direction of a metal ring substrate were irradiated by this annular cathode HCPEB source. The surface and cross-section morphologies of the irradiated samples were characterized by scanning electron microscopy (SEM). SEM images of the surface reveal that crater and surface undulation have been formed, which hints that the irradiation energy of the HCPEB process is large enough for surface modification of 9310 steel. Meanwhile, SEM cross-section images exhibit that remelted layers with a thickness of about 5.4 μm have been obtained in all samples, which proves that a good practical irradiation uniformity can be achieved by this annular cathode HCPEB source.

  1. A back-illuminated megapixel CMOS image sensor

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

    2005-01-01

    In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

  2. High-Voltage-Input Level Translator Using Standard CMOS

    NASA Technical Reports Server (NTRS)

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  3. Numerical Simulation of a Multi-Cusp Ion Source for High Current H- Cyclotron at RISP

    NASA Astrophysics Data System (ADS)

    Kim, J. H.

    The rare isotope science project (RISP) has been launched in 2011 to support a wide range science program in nuclear, material, and bio-medical sciences as well as interdisciplinary programs. The production of rare isotope beams at RISP is currently configured to include facilities for both an In-flight Fragmentation (IF) system and an Isotope Separator On-Line (ISOL) system, which will utilize a 70 MeV H- cyclotron. The cyclotron will deliver 70 kW proton beam power to ISOL targets, where rare isotopes are generated and re-accelerated by a linear accelerator. A multi-cusp ion source used widely in H- cyclotrons is designed to have cusp geometries of magnetic field inside the ion source chamber, where ions are confined and enhanced plasma densities. Therefore the magnetic confinement fields produced by a number of permanent magnetic poles help to increase H- beam currents. In this work a numerical simulation is performed to understand the effect of multi-cusp magnetic fields when the number of magnetic poles is varied from 6 to 14. It is found that the larger number of magnetic poles provides a stronger ion confinement yielding higher extracted H- ion currents while the extracted electron current becomes lower.

  4. Development of a high average current polarized electron source with long cathode operational lifetime

    SciTech Connect

    C. K. Sinclair; P. A. Adderley; B. M. Dunham; J. C. Hansknecht; P. Hartmann; M. Poelker; J. S. Price; P. M. Rutt; W. J. Schneider; M. Steigerwald

    2007-02-01

    Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and have often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2?105???C/cm2 and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.

  5. Eight channel transmit array volume coil using on-coil radiofrequency current sources

    PubMed Central

    Kurpad, Krishna N.; Boskamp, Eddy B.

    2014-01-01

    Background At imaging frequencies associated with high-field MRI, the combined effects of increased load-coil interaction and shortened wavelength results in degradation of circular polarization and B1 field homogeneity in the imaging volume. Radio frequency (RF) shimming is known to mitigate the problem of B1 field inhomogeneity. Transmit arrays with well decoupled transmitting elements enable accurate B1 field pattern control using simple, non-iterative algorithms. Methods An eight channel transmit array was constructed. Each channel consisted of a transmitting element driven by a dedicated on-coil RF current source. The coil current distributions of characteristic transverse electromagnetic (TEM) coil resonant modes were non-iteratively set up on each transmitting element and 3T MRI images of a mineral oil phantom were obtained. Results B1 field patterns of several linear and quadrature TEM coil resonant modes that typically occur at different resonant frequencies were replicated at 128 MHz without having to retune the transmit array. The generated B1 field patterns agreed well with simulation in most cases. Conclusions Independent control of current amplitude and phase on each transmitting element was demonstrated. The transmit array with on-coil RF current sources enables B1 field shimming in a simple and predictable manner. PMID:24834418

  6. Validation of a quantized-current source with 0.2 ppm uncertainty

    SciTech Connect

    Stein, Friederike; Fricke, Lukas Scherer, Hansjörg; Hohls, Frank Leicht, Christoph; Götz, Martin; Krause, Christian; Behr, Ralf; Pesel, Eckart; Pierz, Klaus; Siegner, Uwe; Ahlers, Franz J.; Schumacher, Hans W.; Drung, Dietmar

    2015-09-07

    We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies f up to 1 GHz. The measurements were performed with an ultrastable picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to I = ef with e being the elementary charge was confirmed at f = 545 MHz with a total relative uncertainty of 0.2 ppm, improving the state of the art by about a factor of 5. The accuracy of a possible future quantum current standard based on single-electron transport was experimentally validated to be better than the best (indirect) realization of the ampere within the present SI.

  7. Fundamental performance differences between CMOS and CCD imagers: Part II

    NASA Astrophysics Data System (ADS)

    Janesick, James; Andrews, James; Tower, John; Grygon, Mark; Elliott, Tom; Cheng, John; Lesser, Michael; Pinter, Jeff

    2007-09-01

    A new class of CMOS imagers that compete with scientific CCDs is presented. The sensors are based on deep depletion backside illuminated technology to achieve high near infrared quantum efficiency and low pixel cross-talk. The imagers deliver very low read noise suitable for single photon counting - Fano-noise limited soft x-ray applications. Digital correlated double sampling signal processing necessary to achieve low read noise performance is analyzed and demonstrated for CMOS use. Detailed experimental data products generated by different pixel architectures (notably 3TPPD, 5TPPD and 6TPG designs) are presented including read noise, charge capacity, dynamic range, quantum efficiency, charge collection and transfer efficiency and dark current generation. Radiation damage data taken for the imagers is also reported.

  8. A CMOS image sensor dedicated to medical gamma camera application

    NASA Astrophysics Data System (ADS)

    Salahuddin, Nur S.; Paindavoine, Michel; Ginhac, Dominique; Parmentier, Michel; Tamda, Najia

    2005-03-01

    Generally, medical Gamma Camera are based on the Anger principle. These cameras use a scintillator block coupled to a bulky array of photomultiplier tube (PMT). To simplify this, we designed a new integrated CMOS image sensor in order to replace bulky PMT photodetetors. We studied several photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Mikro Systeme (AMS). Each sensor pixel in the array occupies respectively, 1mm x 1mm area, 0.5mm x 0.5mm area and 0.2mm 0.2mm area with fill factor 98 % and total chip area is 2 square millimeters. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low green light emitting diode (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept.

  9. Accelerated life testing effects on CMOS microcircuit characteristics

    NASA Technical Reports Server (NTRS)

    1977-01-01

    Accelerated life tests were performed on CMOS microcircuits to predict their long term reliability. The consistency of the CMOS microcircuit activation energy between the range of 125 C to 200 C and the range 200 C to 250 C was determined. Results indicate CMOS complexity and the amount of moisture detected inside the devices after testing influences time to failure of tested CMOS devices.

  10. Direct evidence for local oscillatory current sources and intracortical phase gradients in turtle visual cortex.

    PubMed

    Prechtl, J C; Bullock, T H; Kleinfeld, D

    2000-01-18

    Visual stimuli induce oscillations in the membrane potential of neurons in cortices of several species. In turtle, these oscillations take the form of linear and circular traveling waves. Such waves may be a consequence of a pacemaker that emits periodic pulses of excitation that propagate across a network of excitable neuronal tissue or may result from continuous and possibly reconfigurable phase shifts along a network with multiple weakly coupled neuronal oscillators. As a means to resolve the origin of wave propagation in turtle visual cortex, we performed simultaneous measurements of the local field potential at a series of depths throughout this cortex. Measurements along a single radial penetration revealed the presence of broadband current sources, with a center frequency near 20 Hz (gamma band), that were activated by visual stimulation. The spectral coherence between sources at two well-separated loci along a rostral-caudal axis revealed the presence of systematic timing differences between localized cortical oscillators. These multiple oscillating current sources and their timing differences in a tangential plane are interpreted as the neuronal activity that underlies the wave motion revealed in previous imaging studies. The present data provide direct evidence for the inference from imaging of bidirectional wave motion that the stimulus-induced electrical waves in turtle visual cortex correspond to phase shifts in a network of coupled neuronal oscillators.

  11. Inverse current source density method in two dimensions: inferring neural activation from multielectrode recordings.

    PubMed

    Łęski, Szymon; Pettersen, Klas H; Tunstall, Beth; Einevoll, Gaute T; Gigg, John; Wójcik, Daniel K

    2011-12-01

    The recent development of large multielectrode recording arrays has made it affordable for an increasing number of laboratories to record from multiple brain regions simultaneously. The development of analytical tools for array data, however, lags behind these technological advances in hardware. In this paper, we present a method based on forward modeling for estimating current source density from electrophysiological signals recorded on a two-dimensional grid using multi-electrode rectangular arrays. This new method, which we call two-dimensional inverse Current Source Density (iCSD 2D), is based upon and extends our previous one- and three-dimensional techniques. We test several variants of our method, both on surrogate data generated from a collection of Gaussian sources, and on model data from a population of layer 5 neocortical pyramidal neurons. We also apply the method to experimental data from the rat subiculum. The main advantages of the proposed method are the explicit specification of its assumptions, the possibility to include system-specific information as it becomes available, the ability to estimate CSD at the grid boundaries, and lower reconstruction errors when compared to the traditional approach. These features make iCSD 2D a substantial improvement over the approaches used so far and a powerful new tool for the analysis of multielectrode array data. We also provide a free GUI-based MATLAB toolbox to analyze and visualize our test data as well as user datasets.

  12. Simulation of a distributed current source in a linear format CFA

    NASA Astrophysics Data System (ADS)

    Pearlman, Marcus; Browning, Jim

    2015-11-01

    A fundamental limit on Crossed-Field Amplifiers (CFA) gain is beam to RF power ratio. With too much beam power, the RF signal on the slow wave circuit is ``swamped.'' It is proposed here that a controllable, distributed cathode source can be used to tailor current injection and optimize gain. In this work a linear format CFA with a meander line slow wave circuit is tested experimentally and numerically using Vsim. Simulations of the original design, which operates at 900 MHz, shows < 1dB gain at beam currents >100 mA. This beam current is higher than the capabilities of the Field Emitter Array cathodes available to the group; therefore no experimental gain was observed. To be able to compare simulation to experiment, the CFA model under study was changed to the experiment used at Northeastern University in 1991, which also uses a meander line circuit and an injected beam configuration. Direct comparisons between the simulation and this experiment are performed to validate the model. Additional simulations study the effect of different current distributions on gain, bandwidth, and efficiency. Practical considerations such as how to control the energy of the beam separately from the sole potential in order to minimize lost current to sole are also examined. This research was supported by the Air Force Office of Scientific Research and the department of Electrical and Computer Engineering at Boise State University.

  13. Analog circuits for auditory sound source localization using current mode techniques

    NASA Astrophysics Data System (ADS)

    Karl, Christian

    This dissertation focuses on the analog VLSI implementation of auditory nerve models using current mode circuit design techniques. The target application of these chips is sound source localization, a task difficult to accomplish using standard digital signaling processing methods, especially in a reverberant environment. The models and the resulting circuitry have not been previously used commercially. In general, the usage of such models requires a dramatic rethinking of hove to process sound signals. The approach itself is called "biomimetic"; that is to say, mimicking nature's biological systems, in this case the mammalian auditory system. The usage of a biomimetic scheme for sound processing is new and little or no circuitry has been developed to date to support such processing. This dissertation shows how appropriate circuits can be built, highlighting the importance of accuracy using analog VLSI. A 64 analog channel system design composed of 512 very low frequency current mode integrators and 128 current mode multipliers is presented. The design is constrained by the available power budget and layout area. Under these constraints a system is presented that is suitable for sound source localization with sensor spacing of eight inches and above. The main building blocks of a current mode auditory channel have been designed, fabricated and tested. The measured results from the test chips agree with the theoretical predictions as well as with the results from circuit and Monte Carlo simulations. The dissertation highlights the importance of matching constraints in current mode circuitry when designing massively-parallel, non-linear structures. Using Monte Carlo methods as well as a Design Of Experiment (DOE) approach, an analysis has been done, which reveals how to limit mismatch-induced timing jitter. The non-linear circuit behavior was characterized and methods have been elaborated, which will theoretically produce near 100% design yield under reasonable

  14. The neutral current sheet and its radiation pairs of side sources in coronal mass ejections

    NASA Astrophysics Data System (ADS)

    Ji, Shu-Chen

    Using the data observed with the soft X-ray telescope, hard X-ray telescope aboard on Yohkoh and the Nobeyama Radioheliograph on 1998 April 23, a comprehensive study on soft X-ray coronal mass ejection (SXRCME) and radio Type IV burst is carried out and some significant results are obtained as follows: A magnetic capacity belt (MCB) between two magnetic dipole sources (MDSs) was found and there were only a few activitation sources (ASs). During the MCB changed into a magnetic energy belt (MEB) by the ASs, activating energy and shining material both concentrated to the neutral current sheet (NCS) in the course of its formation. When two MDSs were put through by the MEB, the NCS formed and the SXRCME occurred. The matter ejected not only from the NCS, but also from the whole MEB. The expanding loop of the SXRCME had two foot points, both were just two MDSs. The head of the expanding loop always tended to the foot point of the weak source, because it was equilibrium point of magnetic pressures coming from two foot points. For this reason, its locus was neutral line. From this, the neutral line can also determine the position of NCS. Finally, the radiation pairs of side sources of NCS on the MEB are found.

  15. Development of a compact high current low emittance RF ion source

    NASA Astrophysics Data System (ADS)

    Menon, Ranjini; Nabhiraj, P. Y.

    2013-12-01

    A 13.56 MHz inductively coupled plasma based RF ion source is developed for production of high brightness focused ion beams of heavy gaseous elements for high speed milling and light ions for high speed imaging. In order to obtain ion beams with low emittance, no magnetic field of any kind is used in the ion source. However, to achieve the high plasma density, the plasma chamber volume is reduced to couple RF power as high as 8-12 W/cm3 to the plasma. Measurements show that the normalized rms emittance of 0.6 mA Ar1+ beam to be as low as 0.0075 mm-mrad while it is 0.004 mm-mrad for 1.2 mA of ion beam from hydrogen plasma. With a simple parallel plate extraction system with an aperture of 2 mm diameter, 80 mA/cm2 of ion beam from hydrogen plasma could be extracted at 3.5 kV extraction potential and 300 W of RF power. The ion source has been operated with other heavy gases and results show that more than 1 mA of xenon and krypton ion beam could easily be extracted at 5 kV extraction potential and 200 W of RF power. In this article, the capability of the ion source to produce high current, low emittance heavy as well as light ion beams is presented.

  16. Emittance and proton fraction measurement in High current electron cyclotron resonance proton ion source

    NASA Astrophysics Data System (ADS)

    Roychowdhury, P.; Kewlani, H.; Mishra, L.; Gharat, S.; Rajawat, R. K.

    2015-09-01

    The beam characterization studies in terms of emittance and proton fraction have been carried out in the high current Electron Cyclotron Resonance (ECR) proton ion source developed for Low Energy High Intensity Proton Accelerator (LEHIPA). The beam emittance was measured using two slit emittance measurement units (EMU). The emittance was measured at three locations (1) after beam extraction at ion source end, (2) after focusing the beam using solenoid magnet and (3) after focusing and separating H+ using solenoid magnet and analyzing magnet. The beam emittance measured in all three cases was found to be less than 0.2π mm-mrad (rms-normalized). The proton fraction in the beam measured using analyzing magnet was found to be more than 90%. The variations of beam emittance and proton fraction have been studied as a function of microwave power and neutral gas pressure.

  17. PIG Ion Source with Permanent Magnets: Model Based Anode Current Return Circuit

    NASA Astrophysics Data System (ADS)

    Babapour Ghadikolaee, Mohammad Reza

    2012-12-01

    Ion sources are widely used in fusion technologies. A new high voltage pulsed power supply for use in penning ion gauge ion sources is proposed in this paper. To use discharge current, a diode-capacitor bank is included. The power supply is composed of 3 stages. A fast switching transistor is used as a single switch which is trigged by a pulse generator. A transformer is used to level up the voltage up to 2 kV without power loss. It is also used to isolate input and high voltage output. Also; the proposed high voltage power supply implementation uses a diode-capacitor bank whose capacitors are charged during plasma discharge. This system structure gives compactness and easiness to implement the total system which in combination with inexpensive commercially available components, makes the unit versatile and inexpensive.

  18. Measurement of Turbulence with Acoustic Doppler Current Profilers - Sources of Error and Laboratory Results

    USGS Publications Warehouse

    Nystrom, E.A.; Oberg, K.A.; Rehmann, C.R.; ,

    2002-01-01

    Acoustic Doppler current profilers (ADCPs) provide a promising method for measuring surface-water turbulence because they can provide data from a large spatial range in a relatively short time with relative ease. Some potential sources of errors in turbulence measurements made with ADCPs include inaccuracy of Doppler-shift measurements, poor temporal and spatial measurement resolution, and inaccuracy of multi-dimensional velocities resolved from one-dimensional velocities measured at separate locations. Results from laboratory measurements of mean velocity and turbulence statistics made with two pulse-coherent ADCPs in 0.87 meters of water are used to illustrate several of inherent sources of error in ADCP turbulence measurements. Results show that processing algorithms and beam configurations have important effects on turbulence measurements. ADCPs can provide reasonable estimates of many turbulence parameters; however, the accuracy of turbulence measurements made with commercially available ADCPs is often poor in comparison to standard measurement techniques.

  19. Enhancement of ion current from the TRIPS source by means of different electron donors

    SciTech Connect

    Gammino, S.; Ciavola, G.; Celona, L.; Torrisi, L.; Mascali, D.; Passarello, S.; Galata, A.

    2006-03-15

    A series of measurements were carried out with the TRasco Intense Proton Source (TRIPS) to determine the effectiveness of different materials as electron donors. It is well known that the use of boron nitride (BN) disks inside the plasma chamber increases the current extracted from microwave discharge ion sources, generating additional electrons. In the past, one of the two disks was replaced by a 40 {mu}m Al{sub 2}O{sub 3} coating over the extraction electrode, which gave some increase of current, but after less than 200 h was heavily damaged. The tests here reported concern three different options: (a) thicker Al{sub 2}O{sub 3} layer (100 {mu}m) deposited over the extraction electrode; a 1-mm-thick aluminium foil over which an alumina layer is deposited, inserted in the plasma chamber; a 5-mm-thick Al{sub 2}O{sub 3} tube embedded in the plasma chamber of the TRIPS source (the outer diameter of the tube being slightly smaller than the inner diameter of the chamber). The tests were carried out in the same conditions as for magnetic field topology and only rf power and gas input were variable. Special attention was paid to the proton fraction. In fact, a higher proton fraction can be considered as a signature of the higher availability of electrons in the plasma. With the thick alumina tube not only was a better current and proton fraction observed but also a lower beam ripple and better stability.

  20. Reduction of Beam Current Noise in the FNAL Magnetron Ion Source

    SciTech Connect

    Bollinger, D. S.; Karns, P. R.; Tan, C. Y.

    2014-01-01

    The new FNAL Injector Line with a circular dimple magnetron ion source has been operational since December of 2013. Since the new injector came on line there have been variations in the H- beam current flattop observed near the downstream end of the linac. Several different cathode geometries including a hollow cathode suggested by Dudnikov [1] were tried. We expanded on those studies by trying mixtures ranging from 0.25%N, 99.75%H to 3%N, 97%H. The results of these studies in our test stand will be presented in this paper.

  1. High-current quasi-square-wave millisecond light source for high-speed photography

    NASA Astrophysics Data System (ADS)

    Lin, Wenzheng; Jiang, Aibao; Zhuo, Meizhen

    1993-01-01

    A novel powerful strobe for high-speed photography is described which can replace the high power cw light source, to save energy and synchroflash with the camera. In this strobe, three- phase transformerless direct rectifier, high current SCR switch and pre-ionization technique are used so that the energy consumption goes down greatly, and its total weight is less than 25 Kg. Its principal parameters are as follows: average power, 50 KW; light emitting pulse width, 1 - 100 ms; pulse rise time, less than 0.05 ms; pulse fall time, less than 0.1 ms.

  2. Spectrometry with consumer-quality CMOS cameras.

    PubMed

    Scheeline, Alexander

    2015-01-01

    Many modern spectrometric instruments use diode arrays, charge-coupled arrays, or CMOS cameras for detection and measurement. As portable or point-of-use instruments are desirable, one would expect that instruments using the cameras in cellular telephones and tablet computers would be the basis of numerous instruments. However, no mass market for such devices has yet developed. The difficulties in using megapixel CMOS cameras for scientific measurements are discussed, and promising avenues for instrument development reviewed. Inexpensive alternatives to use of the built-in camera are also mentioned, as the long-term question is whether it is better to overcome the constraints of CMOS cameras or to bypass them.

  3. Reduction of beam current noise in the FNAL magnetron ion source

    SciTech Connect

    Bollinger, D. S. Karns, P. R. Tan, C. Y.

    2015-04-08

    The new FNAL Injector Line with a circular dimple magnetron ion source has been operational since December of 2012. Since the new injector came on line there have been variations in the H- beam current flattop observed near the downstream end of the Linac. Several different cathode geometries including a hollow cathode suggested by Dudnikov [1] were tried. Previous studies also showed that different mixtures of hydrogen and nitrogen had an effect on beam current noise [2]. We expanded on those studies by trying mixtures ranging from (0.25% nitrogen, 99.75% hydrogen) to (3% nitrogen, 97% hydrogen). The results of these studies in our test stand will be presented in this paper.

  4. PHYSICS OF THE HIGH CURRENT DENSITY ELECTRON BEAM ION SOURCE (EBIS).

    SciTech Connect

    Vella, M.C.

    1980-02-01

    Interest in upgrading present heavy particle accelerators has led to study of EBIS as a possible source of high Z ions, e.g,, Ar{sup +18}. The present work has been motivated primarily by the results reported by CRYEBIS, which indicate that a space charge neutralized, external electron gun can achieve current densities of 10{sup 5} A/cm{sup 2}. Scaling relationships are developed as a basis for understanding CRYEBIS operation. The relevance of collective effects to beam equilibrium and stability is pointed out, Single electron impact ionization scaling and beam neutralization scaling indicate that higher beam voltage may be the easiest way of increasing both ionization rate and particle intensity. Consideration of radial ion confinement suggests that beam collapse to high current density may be related to the highest charge state which is energetically accessible.

  5. Simulation-based validation for four- dimensional multi-channel ultrasound current source density imaging.

    PubMed

    Wang, Zhaohui; Witte, Russell S

    2014-03-01

    Ultrasound current source density imaging (UCSDI), which has application to the heart and brain, exploits the acoustoelectric (AE) effect and Ohm's law to detect and map an electrical current distribution. In this study, we describe 4-D UCSDI simulations of a dipole field for comparison and validation with bench-top experiments. The simulations consider the properties of the ultrasound pulse as it passes through a conductive medium, the electric field of the injected dipole, and the lead field of the detectors. In the simulation, the lead fields of detectors and electric field of the dipole were calculated by the finite element (FE) method, and the convolution and correlation in the computation of the detected AE voltage signal were accelerated using 3-D fast Fourier transforms. In the bench-top experiment, an electric dipole was produced in a bath of 0.9% NaCl solution containing two electrodes, which injected an ac pulse (200 Hz, 3 cycles) ranging from 0 to 140 mA. Stimulating and recording electrodes were placed in a custom electrode chamber made on a rapid prototype printer. Each electrode could be positioned anywhere on an x-y grid (5 mm spacing) and individually adjusted in the depth direction for precise control of the geometry of the current sources and detecting electrodes. A 1-MHz ultrasound beam was pulsed and focused through a plastic film to modulate the current distribution inside the saline-filled tank. AE signals were simultaneously detected at a sampling frequency of 15 MHz on multiple recording electrodes. A single recording electrode is sufficient to form volume images of the current flow and electric potentials. The AE potential is sensitive to the distance from the dipole, but is less sensitive to the angle between the detector and the dipole. Multi-channel UCSDI potentially improves 4-D mapping of bioelectric sources in the body at high spatial resolution, which is especially important for diagnosing and guiding treatment of cardiac and

  6. Simulation-Based Validation for Four-Dimensional Multi-Channel Ultrasound Current Source Density Imaging

    PubMed Central

    Wang, Zhaohui; Witte, Russell S.

    2015-01-01

    Ultrasound current source density imaging (UCSDI), which has application to the heart and brain, exploits the acoustoelectric (AE) effect and Ohm's law to detect and map an electrical current distribution. In this study, we describe 4-D UCSDI simulations of a dipole field for comparison and validation with bench-top experiments. The simulations consider the properties of the ultrasound pulse as it passes through a conductive medium, the electric field of the injected dipole, and the lead field of the detectors. In the simulation, the lead fields of detectors and electric field of the dipole were calculated by the finite element (FE) method, and the convolution and correlation in the computation of the detected AE voltage signal were accelerated using 3-D fast Fourier transforms. In the bench-top experiment, an electric dipole was produced in a bath of 0.9% NaCl solution containing two electrodes, which injected an ac pulse (200 Hz, 3 cycles) ranging from 0 to 140 mA. Stimulating and recording electrodes were placed in a custom electrode chamber made on a rapid prototype printer. Each electrode could be positioned anywhere on an x-y grid (5 mm spacing) and individually adjusted in the depth direction for precise control of the geometry of the current sources and detecting electrodes. A 1-MHz ultrasound beam was pulsed and focused through a plastic film to modulate the current distribution inside the saline-filled tank. AE signals were simultaneously detected at a sampling frequency of 15 MHz on multiple recording electrodes. A single recording electrode is sufficient to form volume images of the current flow and electric potentials. The AE potential is sensitive to the distance from the dipole, but is less sensitive to the angle between the detector and the dipole. Multi-channel UCSDI potentially improves 4-D mapping of bioelectric sources in the body at high spatial resolution, which is especially important for diagnosing and guiding treatment of cardiac and

  7. Investigation of helium ion production in constricted direct current plasma ion source with layered-glows

    SciTech Connect

    Lee, Yuna; Chung, Kyoung-Jae; Park, Yeong-Shin; Hwang, Y. S.

    2014-02-15

    Generation of helium ions is experimentally investigated with a constricted direct current (DC) plasma ion source operated at layered-glow mode, in which electrons could be accelerated through multiple potential structures so as to generate helium ions including He{sup 2+} by successive ionization collisions in front of an extraction aperture. The helium discharge is sustained with the formation of a couple of stable layers and the plasma ball with high density is created near the extraction aperture at the operational pressure down to 0.6 Torr with concave cathodes. The ion beam current extracted with an extraction voltage of 5 kV is observed to be proportional to the discharge current and inversely proportional to the operating pressure, showing high current density of 130 mA/cm{sup 2} and power density of 0.52 mA/cm{sup 2}/W. He{sup 2+} ions, which were predicted to be able to exist due to multiple-layer potential structure, are not observed. Simple calculation on production of He{sup 2+} ions inside the plasma ball reveals that reduced operating pressure and increased cathode area will help to generate He{sup 2+} ions with the layered-glow DC discharge.

  8. On the problems of stability and durability of field-emission current sources for electrovacuum devices

    NASA Astrophysics Data System (ADS)

    Yakunin, Alexander N.; Aban'shin, Nikolay P.; Akchurin, Garif G.; Akchurin, Georgy G.; Avetisyan, Yuri A.

    2016-03-01

    The results of the practical implementation of the concept of field-emission current source with high average current density of 0.1-0.3 A-cm-2 are shown. The durability of cathode samples at a level of 6000 hours is achieved under conditions of technical vacuum. A phenomenological model is suggested that describes the tunneling of both equilibrium and nonequilibrium electrons in a vacuum from the zone of concentration of electrostatic field. Conditions are discussed as the resulting increase in the emission current due to the connection mechanism of the photoelectric effect is thermodynamically favorable, that is not accompanied by an undesirable increase in the temperature of the local emission zone. It is shown that to ensure stability and durability of the cathode is also important to limit the concentration of equilibrium carriers using composite structures «DLC film on Mo substrate." This helps to reduce the criticality of the CVC. A possible alternative is to use a restrictive resistance in the cathode. However, this increases the heat losses and thus decreases assembly efficiency. The results of experimental studies of the structure showing the saturation of photoemission current component with an increase in operating voltage. This fact suggests the existence of an effective mechanism for control of emission at constant operating voltage. This is fundamentally important for the stabilization of field emission cathode, providing a reliability and durability. The single-photon processes and the small thickness DLC films (15-20 nm) provide high-speed process of control.

  9. Density currents in the Chicago River: Characterization, effects on water quality, and potential sources

    USGS Publications Warehouse

    Jackson, P. Ryan; Garcia, Carlos M.; Oberg, Kevin A.; Johnson, Kevin K.; Garcia, Marcelo H.

    2008-01-01

    Bidirectional flows in a river system can occur under stratified flow conditions and in addition to creating significant errors in discharge estimates, the upstream propagating currents are capable of transporting contaminants and affecting water quality. Detailed field observations of bidirectional flows were made in the Chicago River in Chicago, Illinois in the winter of 2005-06. Using multiple acoustic Doppler current profilers simultaneously with a water-quality profiler, the formation of upstream propagating density currents within the Chicago River both as an underflow and an overflow was observed on three occasions. Density differences driving the flow primarily arise from salinity differences between intersecting branches of the Chicago River, whereas water temperature is secondary in the creation of these currents. Deicing salts appear to be the primary source of salinity in the North Branch of the Chicago River, entering the waterway through direct runoff and effluent from a wastewater-treatment plant in a large metropolitan area primarily served by combined sewers. Water-quality assessments of the Chicago River may underestimate (or overestimate) the impairment of the river because standard water-quality monitoring practices do not account for density-driven underflows (or overflows). Chloride concentrations near the riverbed can significantly exceed concentrations at the river surface during underflows indicating that full-depth parameter profiles are necessary for accurate water-quality assessments in urban environments where application of deicing salt is common.

  10. Role of Plasma Sheet Source Population in Ring Current Dynamics (Invited)

    NASA Astrophysics Data System (ADS)

    Jordanova, V.; Yu, Y.; Reeves, G. D.; Kletzing, C.; Spence, H.; Sazykin, S. Y.

    2013-12-01

    Understanding the dynamics of ring current particles during disturbed conditions remains a long-standing challenge, moreover these particles represent a seed population for the hazardous radiation belts. The formation of the storm-time ring current depends on two main factors: 1) the plasma sheet as a reservoir supplying particles that are transported earthward, and 2) the electric field as a mechanism that energizes them. To investigate ring current development on a global scale, we use our four-dimensional (4-D) ring current-atmosphere interactions model (RAM-SCB) [Jordanova et al., 2010; Zaharia et al., 2010] which solves the kinetic equation for H+, O+, and He+ ions and electrons using a self-consistently calculated magnetic field in force balance with the anisotropic ring current plasma pressure. The model boundary was recently expanded from geosynchronous orbit to 9 RE, where the plasma boundary conditions are specified from the empirical plasma sheet model TM03 [Tsyganenko and Mukai, 2003] based on Geotail data. We simulate the transport, acceleration, and loss of energetic particles from the magnetotail to the inner magnetosphere during several geomagnetic storms that occurred since the launch of the Van Allen Probes in August 2012. We compare our results with simultaneous plasma and field observations from the Energetic particle, Composition, and Thermal plasma (ECT) [Spence et al., 2013] and the Electric and Magnetic Field Instrument Suite and Integrated Science (EMFISIS) [Kletzing et al., 2013] investigations on the Van Allen Probes. We investigate the role of the plasma sheet source population in global ring current simulations considering various boundary conditions and electric field formulations. An improved understanding of the highly coupled inner magnetosphere system is provided.

  11. The solar wind pressure pulse as a ring current source in the disturbed magnetosphere

    NASA Astrophysics Data System (ADS)

    Kalegaev, Vladimir; Vlasova, Natalia; Nazarkov, Ilya

    2016-07-01

    The solar wind pressure and IMF are the most important factors of interplanetary medium disturbing the Earth's magnetosphere. They determine the momentum/energy transfer inside the magnetopause. The relative dynamics of solar wind pressure and IMF controls the development of the different storm-time magnetospheric currents during disturbances. While the southward turning of IMF is well-known magnetic storm source, the role of the strong pressure pulse under northward IMF is not enough studied. We present the results of studying the solar wind pressure influence on the magnetospheric structure during events on 21-22 January 2005 and 22-23 June 2015 when the main phase of geomagnetic storms developed under IMF Bz>0. Joint analysis of experimental and modeling data was carried out. Equatorial ion fluxes of 30-80 keV protons of the storm time equatorial belt (STEB) measured by low-altitude polar sun-synchronous NOAA POES satellites were used to estimate the ring current evolution. The magnetic field of the large-scale magnetospheric currents was calculated in terms of the paraboloid model of the magnetospheric geomagnetic field A2000. It was found that ring current development during the early main phase of the magnetic storms was provided not only large-scale magnetospheric convection but also by extremely strong solar wind dynamical impact. Interplanetary shock caused intensive trapped particle non-adiabatic radial motion to the lover L-shells during SSC and subsequent ring current enhancement similar to that taking place due to particle injection from the tail. The extreme solar wind pressure pulse can produce the ring current enhancement even under the northward orientation of the interplanetary magnetic field.

  12. A Glucose Biosensor Using CMOS Potentiostat and Vertically Aligned Carbon Nanofibers.

    PubMed

    Al Mamun, Khandaker A; Islam, Syed K; Hensley, Dale K; McFarlane, Nicole

    2016-08-01

    This paper reports a linear, low power, and compact CMOS based potentiostat for vertically aligned carbon nanofibers (VACNF) based amperometric glucose sensors. The CMOS based potentiostat consists of a single-ended potential control unit, a low noise common gate difference-differential pair transimpedance amplifier and a low power VCO. The potentiostat current measuring unit can detect electrochemical current ranging from 500 nA to 7 [Formula: see text] from the VACNF working electrodes with high degree of linearity. This current corresponds to a range of glucose, which depends on the fiber forest density. The potentiostat consumes 71.7 [Formula: see text] of power from a 1.8 V supply and occupies 0.017 [Formula: see text] of chip area realized in a 0.18 [Formula: see text] standard CMOS process. PMID:27337723

  13. Drift velocity of charged particles in magnetic fields and its relation to the direction of the source current

    NASA Astrophysics Data System (ADS)

    Essén, Hanno; Nordmark, Arne B.

    2016-10-01

    Integrable motion of charged particles in magnetic fields produced by stationary current distributions is investigated. We treat motion in the magnetic field from an infinite flat current sheet, a Harris current sheath, an infinite rectilinear current, and a dipole in its equatorial plane. We find that positively charged particles as a rule will drift in the same direction as the current that is the source of the magnetic field in question. The conclusion is that charged particles moving under the influence of current distributions tend to enhance the current and that this indicates current self-amplification.

  14. Localization of single-cell current sources based on extracellular potential patterns: the spike CSD method.

    PubMed

    Somogyvári, Zoltán; Cserpán, Dorottya; Ulbert, István; Erdi, Péter

    2012-11-01

    Traditional current source density (tCSD) calculation method calculates neural current source distribution of extracellular (EC) potential patterns, thus providing important neurophysiological information. While the tCSD method is based on physical principles, it adopts some assumptions, which can not hold for single-cell activity. Consequently, tCSD method gives false results for single-cell activity. A new, spike CSD (sCSD) method has been developed, specifically designed to reveal CSD distribution of single cells during action potential generation. This method is based on the inverse solution of the Poisson-equation. The efficiency of the method is tested and demonstrated with simulations, and showed, that the sCSD method reconstructed the original CSD more precisely than the tCSD. The sCSD method is applied to EC spatial potential patterns of spikes, measured in cat primary auditory cortex with a 16-channel chronically implanted linear probe in vivo. Using our method, the cell-electrode distances were estimated and the spatio-temporal CSD distributions were reconstructed. The results suggested, that the new method is potentially useful in determining fine details of the spatio-temporal dynamics of spikes.

  15. Municipal solid waste (MSW) as a renewable source of energy: current and future practices in China.

    PubMed

    Cheng, Hefa; Hu, Yuanan

    2010-06-01

    With rapid economic growth and massive urbanization, China faces the problem of municipal solid waste (MSW) disposal and the pressing need for development of alternative energy. Waste-to-energy (WTE) incineration, which recovers energy from discarded MSW and produces electricity and/or steam for heating, is recognized as a renewable source of energy and is playing an increasingly important role in MSW management in China. This article provides an overview of the WTE industry, discusses the major challenges in expanding WTE incineration in China, namely, high capital and operational costs, equipment corrosion, air pollutant emissions, and fly ash disposal. A perspective on MSW as a renewable energy source in China is also presented. Currently, only approximately 13% of MSW generated in China is disposed in WTE facilities. With the significant benefits of environmental quality, the reduction of greenhouse gas (GHG) emissions, and government policies and financial incentives as a renewable energy source, WTE incineration industry is expected to experience significant growth in the coming decade and make greater contribution to supplying renewable energy in China.

  16. Integrated CMOS amplifier for ENG signal recording.

    PubMed

    Uranga, A; Navarro, X; Barniol, N

    2004-12-01

    The development and in vivo test of a fully integrated differential CMOS amplifier, implemented with standard 0.7-microm CMOS technology (one poly, two metals, self aligned twin-well CMOS process) intended to record extracellular neural signals is described. In order to minimize the flicker noise generated by the CMOS circuitry, a chopper technique has been chosen. The fabricated amplifier has a gain of 74 dB, a bandwidth of 3 kHz, an input noise of 6.6 nV/(Hz)0.5, a power dissipation of 1.3 mW, and the active area is 2.7 mm2. An ac coupling has been used to adapt the electrode to the amplifier circuitry for the in vivo testing. Compound muscle action potentials, motor unit action potentials, and compound nerve action potentials have been recorded in acute experiments with rats, in order to validate the amplifier. PMID:15605867

  17. Field Emission Properties of Carbon Nanotube Fibers and Sheets for a High Current Electron Source

    NASA Astrophysics Data System (ADS)

    Christy, Larry

    Field emission (FE) properties of carbon nanotube (CNT) fibers from Rice University and the University of Cambridge have been studied for use within a high current electron source for a directed energy weapon. Upon reviewing the performance of these two prevalent CNT fibers, cathodes were designed with CNT fibers from the University of Cincinnati Nanoworld Laboratory. Cathodes composed of a single CNT fiber, an array of three CNT fibers, and a nonwoven CNT sheet were investigated for FE properties; the goal was to design a cathode with emission current in excess of 10 mA. Once the design phase was complete, the cathode samples were fabricated, characterized, and then analyzed to determine FE properties. Electrical conductivity of the CNT fibers was characterized with a 4-probe technique. FE characteristics were measured in an ultra-high vacuum chamber at Wright-Patterson Air Force Base. The arrayed CNT fiber and the enhanced nonwoven CNT sheet emitter design demonstrated the most promising FE properties. Future work will include further analysis and cathode design using this nonwoven CNT sheet material to increase peak current performance during electron emission.

  18. High yield neutron generator based on a high-current gasdynamic electron cyclotron resonance ion source

    SciTech Connect

    Skalyga, V.; Sidorov, A.; Izotov, I.; Golubev, S.; Razin, S.; Strelkov, A.; Tarvainen, O.; Koivisto, H.; Kalvas, T.

    2015-09-07

    In present paper, an approach for high yield compact D-D neutron generator based on a high current gasdynamic electron cyclotron resonance ion source is suggested. Results on dense pulsed deuteron beam production with current up to 500 mA and current density up to 750 mA/cm{sup 2} are demonstrated. Neutron yield from D{sub 2}O and TiD{sub 2} targets was measured in case of its bombardment by pulsed 300 mA D{sup +} beam with 45 keV energy. Neutron yield density at target surface of 10{sup 9} s{sup −1} cm{sup −2} was detected with a system of two {sup 3}He proportional counters. Estimations based on obtained experimental results show that neutron yield from a high quality TiD{sub 2} target bombarded by D{sup +} beam demonstrated in present work accelerated to 100 keV could reach 6 × 10{sup 10} s{sup −1} cm{sup −2}. It is discussed that compact neutron generator with such characteristics could be perspective for a number of applications like boron neutron capture therapy, security systems based on neutron scanning, and neutronography.

  19. Novel current collapse mode induced by source leakage current in AlGaN/GaN high-electron-mobility transistors and its impact

    NASA Astrophysics Data System (ADS)

    Tsubomi, Kunihiro; Muraguchi, Masakazu; Endoh, Tetsuo

    2016-08-01

    The suppression of the current collapse phenomenon is required for reducing on-resistance in AlGaN/GaN high-electron-mobility transistors. Current collapse is caused by electron trapping at the surface and in the buffer layer. In previous works, electron injection to traps has been mainly regarded as being due to gate leakage current; however, other factors have not been discussed. In this study, a novel current collapse mode induced by source leakage current is examined with a 2D device simulator. In addition to gate leakage current, electron trapping is induced by source leakage current that flows under the gate electrode during the off-state. The electron trapping increases on-resistance and decreases pinch-off voltage. The increase in on-resistance is clarified under several trap and voltage conditions. In the simulated range, it is revealed that the on-resistance increases over 1.31 times by the source current collapse mode only, when the stress drain voltage of 500 V is applied during the off-state.

  20. Laminar Distribution of Phase-Amplitude Coupling of Spontaneous Current Sources and Sinks

    PubMed Central

    Sotero, Roberto C.; Bortel, Aleksandra; Naaman, Shmuel; Mocanu, Victor M.; Kropf, Pascal; Villeneuve, Martin Y.; Shmuel, Amir

    2015-01-01

    Although resting-state functional connectivity is a commonly used neuroimaging paradigm, the underlying mechanisms remain unknown. Thalamo-cortical and cortico-cortical circuits generate oscillations at different frequencies during spontaneous activity. However, it remains unclear how the various rhythms interact and whether their interactions are lamina-specific. Here we investigated intra- and inter-laminar spontaneous phase-amplitude coupling (PAC). We recorded local-field potentials using laminar probes inserted in the forelimb representation of rat area S1. We then computed time-series of frequency-band- and lamina-specific current source density (CSD), and PACs of CSD for all possible pairs of the classical frequency bands in the range of 1–150 Hz. We observed both intra- and inter-laminar spontaneous PAC. Of 18 possible combinations, 12 showed PAC, with the highest measures of interaction obtained for the pairs of the theta/gamma and delta/gamma bands. Intra- and inter-laminar PACs involving layers 2/3–5a were higher than those involving layer 6. Current sinks (sources) in the delta band were associated with increased (decreased) amplitudes of high-frequency signals in the beta to fast gamma bands throughout layers 2/3–6. Spontaneous sinks (sources) of the theta and alpha bands in layers 2/3–4 were on average linked to dipoles completed by sources (sinks) in layer 6, associated with high (low) amplitudes of the beta to fast-gamma bands in the entire cortical column. Our findings show that during spontaneous activity, delta, theta, and alpha oscillations are associated with periodic excitability, which for the theta and alpha bands is lamina-dependent. They further emphasize the differences between the function of layer 6 and that of the superficial layers, and the role of layer 6 in controlling activity in those layers. Our study links theories on the involvement of PAC in resting-state functional connectivity with previous work that revealed lamina

  1. Multiband CMOS sensor simplify FPA design

    NASA Astrophysics Data System (ADS)

    Wang, Weng Lyang B.; Ling, Jer

    2015-10-01

    Push broom multi-band Focal Plane Array (FPA) design needs to consider optics, image sensor, electronic, mechanic as well as thermal. Conventional FPA use two or several CCD device as an image sensor. The CCD image sensor requires several high speed, high voltage and high current clock drivers as well as analog video processors to support their operation. Signal needs to digitize using external sample / hold and digitized circuit. These support circuits are bulky, consume a lot of power, must be shielded and placed in close to the CCD to minimize the introduction of unwanted noise. The CCD also needs to consider how to dissipate power. The end result is a very complicated FPA and hard to make due to more weighs and draws more power requiring complex heat transfer mechanisms. In this paper, we integrate microelectronic technology and multi-layer soft / hard Printed Circuit Board (PCB) technology to design electronic portion. Since its simplicity and integration, the optics, mechanic, structure and thermal design will become very simple. The whole FPA assembly and dis-assembly reduced to a few days. A multi-band CMOS Sensor (dedicated as C468) was used for this design. The CMOS Sensor, allow for the incorporation of clock drivers, timing generators, signal processing and digitization onto the same Integrated Circuit (IC) as the image sensor arrays. This keeps noise to a minimum while providing high functionality at reasonable power levels. The C468 is a first Multiple System-On-Chip (MSOC) IC. This device used our proprietary wafer butting technology and MSOC technology to combine five long sensor arrays into a size of 120 mm x 23.2 mm and 155 mm x 60 mm for chip and package, respectively. The device composed of one Panchromatic (PAN) and four different Multi- Spectral (MS) sensors. Due to its integration on the electronic design, a lot of room is clear for the thermal design. The optical and mechanical design is become very straight forward. The flight model FPA

  2. Status Epilepticus Induced Spontaneous Dentate Gyrus Spikes: In Vivo Current Source Density Analysis

    PubMed Central

    Flynn, Sean P.; Barrier, Sylvain; Scott, Rod C.; Lenck- Santini, Pierre-Pascal; Holmes, Gregory L.

    2015-01-01

    The dentate gyrus is considered to function as an inhibitory gate limiting excitatory input to the hippocampus. Following status epilepticus (SE), this gating function is reduced and granule cells become hyper-excitable. Dentate spikes (DS) are large amplitude potentials observed in the dentate gyrus (DG) of normal animals. DS are associated with membrane depolarization of granule cells, increased activity of hilar interneurons and suppression of CA3 and CA1 pyramidal cell firing. Therefore, DS could act as an anti-excitatory mechanism. Because of the altered gating function of the dentate gyrus following SE, we sought to investigate how DS are affected following pilocarpine-induced SE. Two weeks following lithium-pilocarpine SE induction, hippocampal EEG was recorded in male Sprague-Dawley rats with 16-channel silicon probes under urethane anesthesia. Probes were placed dorso-ventrally to encompass either CA1-CA3 or CA1-DG layers. Large amplitude spikes were detected from EEG recordings and subject to current source density analysis. Probe placement was verified histologically to evaluate the anatomical localization of current sinks and the origin of DS. In 9 of 11 pilocarpine-treated animals and two controls, DS were confirmed with large current sinks in the molecular layer of the dentate gyrus. DS frequency was significantly increased in pilocarpine-treated animals compared to controls. Additionally, in pilocarpine-treated animals, DS displayed current sinks in the outer, middle and/or inner molecular layers. However, there was no difference in the frequency of events when comparing between layers. This suggests that following SE, DS can be generated by input from medial and lateral entorhinal cortex, or within the dentate gyrus. DS were associated with an increase in multiunit activity in the granule cell layer, but no change in CA1. These results suggest that following SE there is an increase in DS activity, potentially arising from hyperexcitability along the

  3. Sources and fate of freshwater exported in the East Greenland Current

    NASA Astrophysics Data System (ADS)

    Dodd, Paul A.; Heywood, Karen J.; Meredith, Michael P.; Naveira-Garabato, Alberto C.; Marca, Alina D.; Falkner, Kelly K.

    2009-10-01

    Monitoring the sources and fate of freshwater in the East Greenland Current (EGC) is important, as this water has the potential to suppress deep convection in the Nordic and Labrador Seas if the outflow of freshwater from the Arctic Ocean increases in response to climate change. Here, hydrographic, oxygen isotope ratio and dissolved barium concentration sections across Denmark Strait collected in 1998 and 1999 are used to determine the freshwater composition of the EGC at these times. Comparison of meltwater fluxes at Denmark Strait and Fram Strait indicates a net melting of sea ice into the EGC between these two locations, with a significant proportion of sea ice drifting into the Nordic Seas or on to the East Greenland Shelf. We conclude that the phase of freshwater exiting the Arctic Ocean through Fram Strait is important in determining its possible impact on deep water formation in the Nordic and Labrador Seas.

  4. High-current-density field emission display fabricated from single-walled carbon nanotube electron sources

    NASA Astrophysics Data System (ADS)

    Zhao, P.; Shang, X. F.; Ma, Y. P.; Zhou, J. J.; Gu, Z. Q.; Li, Z. H.; Xu, Y. B.; Wang, M.

    2008-06-01

    Single-walled carbon nanotubes can be used as electron sources in the process of field emission, and have great potential for practical application of the field emission display (FED) panels with large screen size. We fabricated a FED using the single-walled carbon nanotubes (SWNTs) as the cathode by the screen-printing process. Test showed that the SWNTs emitters exhibit excellent macroscopic emission properties. It has low turn-on voltage (2.7 V/μ m) and high brightness, with a high current density of good uniformity and stability. It was observed that the field emission qualitatively follows the conventional Fowler Nordheim (F N) theory, and aging treatment played an important role in improving the image uniformity and stability. Compared to other complicated processes, the simple fabrication using screen-printing process seems to be advantageous for practical application.

  5. A high-current microwave ion source with permanent magnet and its beam emittance measurement

    SciTech Connect

    Yao Zeen; Tan Xinjian; Du Hongxin; Luo Ben; Liu Zhanwen

    2008-07-15

    The progress of a 2.45 GHz high-current microwave ion source with permanent magnet for T(d,n){sup 4}He reaction neutron generator is reported in this paper. At 600 W microwave power and 22 kV extraction voltage, 90 mA peak hydrogen ion beam is extracted from a single aperture of 6 mm diameter. The beam emittance is measured using a simplified pepper-pot method. The (x,x{sup '}) emittance and the (y,y{sup '}) emittance for 14 keV hydrogen ion beam are 55.3{pi} and 58.2{pi} mm mrad, respectively. The normalized emittances are 0.302{pi} and 0.317{pi} mm mrad, respectively.

  6. Stem cell sources for tooth regeneration: current status and future prospects.

    PubMed

    Otsu, Keishi; Kumakami-Sakano, Mika; Fujiwara, Naoki; Kikuchi, Kazuko; Keller, Laetitia; Lesot, Hervé; Harada, Hidemitsu

    2014-01-01

    Stem cells are capable of renewing themselves through cell division and have the remarkable ability to differentiate into many different types of cells. They therefore have the potential to become a central tool in regenerative medicine. During the last decade, advances in tissue engineering and stem cell-based tooth regeneration have provided realistic and attractive means of replacing lost or damaged teeth. Investigation of embryonic and adult (tissue) stem cells as potential cell sources for tooth regeneration has led to many promising results. However, technical and ethical issues have hindered the availability of these cells for clinical application. The recent discovery of induced pluripotent stem (iPS) cells has provided the possibility to revolutionize the field of regenerative medicine (dentistry) by offering the option of autologous transplantation. In this article, we review the current progress in the field of stem cell-based tooth regeneration and discuss the possibility of using iPS cells for this purpose.

  7. Wavefront velocity oscillations of carbon-nanotube-guided thermopower waves: nanoscale alternating current sources.

    PubMed

    Abrahamson, Joel T; Choi, Wonjoon; Schonenbach, Nicole S; Park, Jungsik; Han, Jae-Hee; Walsh, Michael P; Kalantar-Zadeh, Kourosh; Strano, Michael S

    2011-01-25

    The nonlinear coupling between exothermic chemical reactions and a nanowire or nanotube with large axial heat conduction results in a self-propagating thermal wave guided along the nanoconduit. The resulting reaction wave induces a concomitant thermopower wave of high power density (>7 kW/kg), resulting in an electrical current along the same direction. We develop the theory of such waves and analyze them experimentally, showing that for certain values of the chemical reaction kinetics and thermal parameters, oscillating wavefront velocities are possible. We demonstrate such oscillations experimentally using a cyclotrimethylene-trinitramine/multiwalled carbon nanotube system, which produces frequencies in the range of 400 to 5000 Hz. The propagation velocity oscillations and the frequency dispersion are well-described by Fourier's law with an Arrhenius source term accounting for reaction and a linear heat exchange with the nanotube scaffold. The frequencies are in agreement with oscillations in the voltage generated by the reaction. These thermopower oscillations may enable new types of nanoscale power and signal processing sources.

  8. High-current diode with ferroelectric plasma source-assisted hollow anode

    SciTech Connect

    Vekselman, V.; Gleizer, J. Z.; Yatom, S.; Gurovich, V. Tz.; Krasik, Ya. E.

    2010-11-15

    The operation of a ferroelectric plasma source-assisted hollow anode (HA) electron source in a vacuum diode powered by an {approx}200 kV and {approx}400 ns pulsed generator was studied using time- and space-resolved laser induced fluorescence diagnostics. It was found that the plasma ion ''temperature'' in the vicinity of the HA output grid increases up to {approx}15 eV during the accelerating pulse, which is consistent with a model of the potential screening of the grid by the randomly moving ions [Phys. Plasmas 13, 073506 (2006)]. Also it was shown that the increase in the HA plasma potential up to several kilovolts because of the appearance of a noncompensated ion charge in the HA bulk plasma due to electrons fast extraction, leads to explosive emission centers being generated at the HA grid and to nonuniformity in the cross-sectional electron beam current density. Finally, the plasma prefilled mode of diode operation was studied using a simple one-dimensional model of the plasma erosion and the HA plasma electron heating by energetic ions was considered.

  9. The adequacy of current import and export controls on sealed radioactive sources.

    SciTech Connect

    Longley, Susan W.; Cochran, John Russell; Price, Laura L.; Lipinski, Kendra J.

    2003-10-01

    Millions of sealed radioactive sources (SRSs) are being used for a wide variety of beneficial purposes throughout the world. Security experts are now concerned that these beneficial SRSs could be used in a radiological dispersion device to terrorize and disrupt society. The greatest safety and security threat is from those highly radioactive Category 1 and 2 SRSs. Without adequate controls, it may be relatively easy to legally purchase a Category 1 or 2 SRS on the international market under false pretenses. Additionally, during transfer, SRSs are particularly susceptible to theft since the sources are in a shielded and mobile configuration, transportation routes are predictable, and shipments may not be adequately guarded. To determine if government controls on SRS are adequate, this study was commissioned to review the current SRS import and export controls of six countries. Canada, the Russian Federation, and South Africa were selected as the exporting countries, and Egypt, the Philippines, and the United States were selected as importing countries. A detailed review of the controls in each country is presented. The authors found that Canada and Russia are major exporters, and are exporting highly radioactive SRSs without first determining if the recipient is authorized by the receiving country to own and use the SRSs. Available evidence was used to estimate that on average there are tens to possibly hundreds of intercountry transfers of highly radioactive SRSs each day. Based on these and other findings, this reports recommends stronger controls on the export and import of highly radioactive SRSs.

  10. Modeling left and right atrial contributions to the ECG: A dipole-current source approach.

    PubMed

    Jacquemet, Vincent

    2015-10-01

    This paper presents the mathematical formulation, the numerical validation and several illustrations of a forward-modeling approach based on dipole-current sources to compute the contribution of a part of the heart to the electrocardiogram (ECG). Clinically relevant applications include identifying in the ECG the contributions from the right and the left atrium. In a Courtemanche-based monodomain computer model of the atria and torso, 1000 dipoles distributed throughout the atrial mid-myocardium are found to be sufficient to reproduce body surface potential maps with a relative error <1% during both sinus rhythm and atrial fibrillation. When the boundary element method is applied to solve the forward problem, this approach enables fast offline computation of the ECG contribution of any anatomical part of the atria by applying the principle of superposition to the dipole sources. In the presence of a right-left activation delay (sinus rhythm), pulmonary vein isolation (sinus rhythm) or left-right differences in refractory period (atrial fibrillation), the decomposition of the ECG is shown to help interpret ECG morphology in relation to the atrial substrate. These tools provide a theoretical basis for a deeper understanding of the genesis of the P wave or fibrillatory waves in normal and pathological cases.

  11. Measuring the acoustoelectric interaction constant using ultrasound current source density imaging

    NASA Astrophysics Data System (ADS)

    Li, Qian; Olafsson, Ragnar; Ingram, Pier; Wang, Zhaohui; Witte, Russell

    2012-10-01

    Ultrasound current source density imaging (UCSDI) exploits the acoustoelectric (AE) effect, an interaction between ultrasound pressure and electrical resistivity, to map electrical conduction in the heart. The conversion efficiency for UCSDI is determined by the AE interaction constant K, a fundamental property of all materials; K directly affects the magnitude of the detected voltage signal in UCSDI. This paper describes a technique for measuring K in biological tissue, and reports its value for the first time in cadaver hearts. A custom chamber was designed and fabricated to control the geometry for estimating K, which was measured in different ionic salt solutions and seven cadaver rabbit hearts. We found K to be strongly dependent on concentration for the divalent salt CuSO4, but not for the monovalent salt NaCl, consistent with their different chemical properties. In the rabbit heart, K was determined to be 0.041±0.012%/MPa, similar to the measurement of K in physiological saline (0.034±0.003%/MPa). This study provides a baseline estimate of K for modeling and experimental studies that involve UCSDI to map cardiac conduction and reentry currents associated with arrhythmias.

  12. First test of BNL electron beam ion source with high current density electron beam

    SciTech Connect

    Pikin, Alexander Alessi, James G. Beebe, Edward N.; Shornikov, Andrey; Mertzig, Robert; Wenander, Fredrik; Scrivens, Richard

    2015-01-09

    A new electron gun with electrostatic compression has been installed at the Electron Beam Ion Source (EBIS) Test Stand at BNL. This is a collaborative effort by BNL and CERN teams with a common goal to study an EBIS with electron beam current up to 10 A, current density up to 10,000 A/cm{sup 2} and energy more than 50 keV. Intensive and pure beams of heavy highly charged ions with mass-to-charge ratio < 4.5 are requested by many heavy ion research facilities including NASA Space Radiation Laboratory (NSRL) at BNL and HIE-ISOLDE at CERN. With a multiampere electron gun, the EBIS should be capable of delivering highly charged ions for both RHIC facility applications at BNL and for ISOLDE experiments at CERN. Details of the electron gun simulations and design, and the Test EBIS electrostatic and magnetostatic structures with the new electron gun are presented. The experimental results of the electron beam transmission are given.

  13. Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

    DOEpatents

    Turner, Steven Richard

    2006-12-26

    A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

  14. An interpretation of induced electric currents in long pipelines caused by natural geomagnetic sources of the upper atmosphere

    USGS Publications Warehouse

    Campbell, W.H.

    1986-01-01

    Electric currents in long pipelines can contribute to corrosion effects that limit the pipe's lifetime. One cause of such electric currents is the geomagnetic field variations that have sources in the Earth's upper atmosphere. Knowledge of the general behavior of the sources allows a prediction of the occurrence times, favorable locations for the pipeline effects, and long-term projections of corrosion contributions. The source spectral characteristics, the Earth's conductivity profile, and a corrosion-frequency dependence limit the period range of the natural field changes that affect the pipe. The corrosion contribution by induced currents from geomagnetic sources should be evaluated for pipelines that are located at high and at equatorial latitudes. At midlatitude locations, the times of these natural current maxima should be avoided for the necessary accurate monitoring of the pipe-to-soil potential. ?? 1986 D. Reidel Publishing Company.

  15. New package for CMOS sensors

    NASA Astrophysics Data System (ADS)

    Diot, Jean-Luc; Loo, Kum Weng; Moscicki, Jean-Pierre; Ng, Hun Shen; Tee, Tong Yan; Teysseyre, Jerome; Yap, Daniel

    2004-02-01

    Cost is the main drawback of existing packages for C-MOS sensors (mainly CLCC family). Alternative packages are thus developed world-wide. And in particular, S.T.Microelectronics has studied a low cost alternative packages based on QFN structure, still with a cavity. Intensive work was done to optimize the over-molding operation forming the cavity onto a metallic lead-frame (metallic lead-frame is a low cost substrate allowing very good mechanical definition of the final package). Material selection (thermo-set resin and glue for glass sealing) was done through standard reliability tests for cavity packages (Moisture Sensitivity Level 3 followed by temperature cycling, humidity storage and high temperature storage). As this package concept is new (without leads protruding the molded cavity), the effect of variation of package dimensions, as well as board lay-out design, are simulated on package life time (during temperature cycling, thermal mismatch between board and package leads to thermal fatigue of solder joints). These simulations are correlated with an experimental temperature cycling test with daisy-chain packages.

  16. 180 Degree Hybrid (Rat-Race) Junction on CMOS Grade Silicon with a Polyimide Interface Layer

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Papapolymerou, John

    2003-01-01

    180-degree hybrid junctions can be used to equally divide power between two output ports with either a 0 or 180-degree phase difference. Alternatively, they can be used to combine signals from two sources and output a sum and difference signal. The main limitation of implementing; these on CMOS grade silicon is the high loss associated with the substrate. In this paper, we present a low loss 180-degree hybrid junction on CMOS grade (15 omega-cm) silicon with a polyimide interface layer for the first time. The divider utilizes Finite Ground Coplanar (FGC) line technology, and operates at a center frequency of 15 GIIz.

  17. A CMOS smart temperature and humidity sensor with combined readout.

    PubMed

    Eder, Clemens; Valente, Virgilio; Donaldson, Nick; Demosthenous, Andreas

    2014-01-01

    A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm2 or 1.2 mm2 were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 µA. PMID:25230305

  18. A CMOS Smart Temperature and Humidity Sensor with Combined Readout

    PubMed Central

    Eder, Clemens; Valente, Virgilio; Donaldson, Nick; Demosthenous, Andreas

    2014-01-01

    A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm2 or 1.2 mm2 were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 μA. PMID:25230305

  19. A CMOS smart temperature and humidity sensor with combined readout.

    PubMed

    Eder, Clemens; Valente, Virgilio; Donaldson, Nick; Demosthenous, Andreas

    2014-09-16

    A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm2 or 1.2 mm2 were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 µA.

  20. Development of low read noise high conversion gain CMOS image sensor for photon counting level imaging

    NASA Astrophysics Data System (ADS)

    Seo, Min-Woong; Kawahito, Shoji; Kagawa, Keiichiro; Yasutomi, Keita

    2016-05-01

    A CMOS image sensor with deep sub-electron read noise and high pixel conversion gain has been developed. Its performance is recognized through image outputs from an area image sensor, confirming the capability of photoelectroncounting- level imaging. To achieve high conversion gain, the proposed pixel has special structures to reduce the parasitic capacitances around FD node. As a result, the pixel conversion gain is increased due to the optimized FD node capacitance, and the noise performance is also improved by removing two noise sources from power supply. For the first time, high contrast images from the reset-gate-less CMOS image sensor, with less than 0.3e- rms noise level, have been generated at an extremely low light level of a few electrons per pixel. In addition, the photon-counting capability of the developed CMOS imager is demonstrated by a measurement, photoelectron-counting histogram (PCH).

  1. The DUV Stability of Superlattice-Doped CMOS Detector Arrays

    NASA Technical Reports Server (NTRS)

    Hoenk, M. E.; Carver, A. G.; Jones, T.; Dickie, M.; Cheng, P.; Greer, H. F.; Nikzad, S.; Sgro, J.; Tsur, S.

    2013-01-01

    JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Supperlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263 nm pulsed, solid state and 193 nm pulsed excimer laser, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming and no image memory at 1000 fps.

  2. DESIGN OF 2.4 GHZ CMOS DIRECT CONVERSION LNA AND MIXER COMBINATION FOR WIRLESS DATA LINK TRANSCEIVER.

    SciTech Connect

    ZHAO, D.; OCONNOR, P.

    2002-04-10

    Three LNA and mixer combinations in 0.6{micro}m and 0.4{micro}m standard CMOS processes for direct-conversion receiver of 2.4GHz ISM band short-range wireless data-link applications are described in this paper. Taking low power dissipation as first consideration, these designs, employing differential common-source LNA and double balanced mixer architectures, achieve total conversion gain as high as 42.4dB, DSB noise figure as low as 9.5dB, output-referred IP3 as high as of 21.3dBm at about 4mA DC current consumption. This proves it is possible to apply standard CMOS process to implement receiver front-end with low power dissipation for this kind of application, but gain changeable LNA is needed to combat the dominant flicker noise of the mixer in order to achieve acceptable sensitivity and dynamic range at the same time.

  3. Recent progress and development of a speedster-EXD: a new event-triggered hybrid CMOS x-ray detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher V.; Falcone, Abraham D.; Prieskorn, Zachary R.; Burrows, David N.

    2015-08-01

    We present the characterization of a new event-driven X-ray hybrid CMOS detector developed by Penn State University in collaboration with Teledyne Imaging Sensors. Along with its low susceptibility to radiation damage, low power consumption, and fast readout time to avoid pile-up, the Speedster-EXD has been designed with the capability to limit its readout to only those pixels containing charge, thus enabling even faster effective frame rates. The threshold for the comparator in each pixel can be set by the user so that only pixels with signal above the set threshold are read out. The Speedster-EXD hybrid CMOS detector also has two new in-pixel features that reduce noise from known noise sources: (1) a low-noise, high-gain CTIA amplifier to eliminate crosstalk from interpixel capacitance (IPC) and (2) in-pixel CDS subtraction to reduce kTC noise. We present the read noise, dark current, IPC, energy resolution, and gain variation measurements of one Speedster-EXD detector.

  4. Novel MSVPWM to reduce the inductor current ripple for Z-source inverter in electric vehicle applications.

    PubMed

    Zhang, Qianfan; Dong, Shuai; Xue, Ping; Zhou, Chaowei; Cheng, ShuKang

    2014-01-01

    A novel modified space vector pulse width modulation (MSVPWM) strategy for Z-Source inverter is presented. By rearranging the position of shoot-through states, the frequency of inductor current ripple is kept constant. Compared with existing MSVPWM strategies, the proposed approach can reduce the maximum inductor current ripple. So the volume of Z-source network inductor can be designed smaller, which brings the beneficial effect on the miniaturization of the electric vehicle controller. Theoretical findings in the novel MSVPWM for Z-Source inverter have been verified by experiment results. PMID:24883412

  5. Novel MSVPWM to Reduce the Inductor Current Ripple for Z-Source Inverter in Electric Vehicle Applications

    PubMed Central

    Zhang, Qianfan; Dong, Shuai; Xue, Ping; Zhou, Chaowei; Cheng, ShuKang

    2014-01-01

    A novel modified space vector pulse width modulation (MSVPWM) strategy for Z-Source inverter is presented. By rearranging the position of shoot-through states, the frequency of inductor current ripple is kept constant. Compared with existing MSVPWM strategies, the proposed approach can reduce the maximum inductor current ripple. So the volume of Z-source network inductor can be designed smaller, which brings the beneficial effect on the miniaturization of the electric vehicle controller. Theoretical findings in the novel MSVPWM for Z-Source inverter have been verified by experiment results. PMID:24883412

  6. Fast signal transfer in a large-area X-ray CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Kim, M. S.; Kang, D. U.; Lee, D. H.; Kim, H.; Cho, G.; Jae, M.

    2014-08-01

    For 2-d X-ray imaging, such as mammography and non-destructive test, a sensor should have a large-area because the sensor for typical X-ray beams cannot use optical lens system. To make a large-area 2-d X-ray image sensor using crystal Si, a technique of tiling unit CMOS image sensors into 2 × 2 or 2 × 3 array can be used. In a unit CMOS image sensor made of most common 8-inch Si wafers, the signal line can be up to ~ 180 mm long. Then its parasitic capacitance is up to ~ 25 pF and its resistance is up to ~ 51 kΩ (0.18 μm, 1P3M process). This long signal line may enlarge the row time up to ~ 50 μsec in case of the signal from the top row pixels to the readout amplifiers located at the bottom of the sensor chip. The output signal pulse is typically characterized by three components in sequence; a charging time (a rising part), a reading time and a discharging time (a falling part). Among these, the discharging time is the longest, and it limits the speed or the frame rate of the X-ray imager. We proposed a forced discharging method which uses a bypass transistor in parallel with the current source of the column signal line. A chip for testing the idea was fabricated by a 0.18 μm process. A active pixel sensor with three transistors and a 3-π RC model of the long line were simulated together. The test results showed that the turning on-and-off of the proposed bypass transistor only during the discharging time could dramatically reduce the discharging time from ~ 50 μsec to ~ 2 μsec, which is the physically minimum time determined by the long metal line capacitance.

  7. Sources or sinks? The responses of tropical forests to current and future climate and atmospheric composition.

    PubMed Central

    Clark, Deborah A

    2004-01-01

    How tropical rainforests are responding to the ongoing global changes in atmospheric composition and climate is little studied and poorly understood. Although rising atmospheric carbon dioxide (CO2) could enhance forest productivity, increased temperatures and drought are likely to diminish it. The limited field data have produced conflicting views of the net impacts of these changes so far. One set of studies has seemed to point to enhanced carbon uptake; however, questions have arisen about these findings, and recent experiments with tropical forest trees indicate carbon saturation of canopy leaves and no biomass increase under enhanced CO2. Other field observations indicate decreased forest productivity and increased tree mortality in recent years of peak temperatures and drought (strong El Niño episodes). To determine current climatic responses of forests around the world tropics will require careful annual monitoring of ecosystem performance in representative forests. To develop the necessary process-level understanding of these responses will require intensified experimentation at the whole-tree and stand levels. Finally, a more complete understanding of tropical rainforest carbon cycling is needed for determining whether these ecosystems are carbon sinks or sources now, and how this status might change during the next century. PMID:15212097

  8. Characterization and reliability of CMOS microstructures

    NASA Astrophysics Data System (ADS)

    Fedder, Gary K.; Blanton, Ronald D. S.

    1999-08-01

    This paper provides an overview of high-aspect-ratio CMOS micromachining, focusing on materials characterization, reliability, and fault analysis. Composite microstrutural beam widths and gaps down to 1.2 micrometers are etched out of conventional CMOS dielectric, aluminum, and gate-polysilicon thin films using post-CMOS dry etching for both structural sidewall definition and for release from the substrate. Differences in stress between the multiple metal and dielectric layers cause vertical stress gradients and curl, while misalignment between layers causes lateral stress gradients and curl. Cracking is induced in a resonant fatigue structures at 620 MPa of repetitive stress after over 50 million cycles. Beams have withstood over 1.3 billion cycles at 124 MPa stress levels induced by electrostatic actuation. Failures due to process defects are classified according to the geometrical features of the defective structures. Relative probability of occurrence of each defect type is extracted from the process simulation results.

  9. Ion traps fabricated in a CMOS foundry

    SciTech Connect

    Mehta, K. K.; Ram, R. J.; Eltony, A. M.; Chuang, I. L.; Bruzewicz, C. D.; Sage, J. M. Chiaverini, J.

    2014-07-28

    We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

  10. Simulation of a current source with a Cole-Cole load for multi-frequency electrical impedance tomography.

    PubMed

    Aguiar Santos, Susana; Schlebusch, Thomas; Leonhardt, Steffen

    2013-01-01

    An accurate current source is one of the keys in the hardware of Electrical impedance Tomography systems. Limitations appear mainly at higher frequencies and for non-simple resistive loads. In this paper, we simulate an improved Howland current source with a Cole-Cole load. Simulations comparing two different op-amps (THS4021 and OPA843) were performed at 1 kHz to 1 MHz. Results show that the THS4021 performed better than the OPA843. The current source with THS4021 reaches an output impedance of 20 MΩ at 1 kHz and above 320 kΩ at 1 MHz, it provides a constant and stable output current up to 4 mA, in the complete range of frequencies, and for Cole-Cole (resistive and capacitive) load.

  11. High-temperature Complementary Metal Oxide Semiconductors (CMOS)

    NASA Technical Reports Server (NTRS)

    Mcbrayer, J. D.

    1981-01-01

    The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.

  12. Low power, CMOS digital autocorrelator spectrometer for spaceborne applications

    NASA Technical Reports Server (NTRS)

    Chandra, Kumar; Wilson, William J.

    1992-01-01

    A 128-channel digital autocorrelator spectrometer using four 32 channel low power CMOS correlator chips was built and tested. The CMOS correlator chip uses a 2-bit multiplication algorithm and a full-custom CMOS VLSI design to achieve low DC power consumption. The digital autocorrelator spectrometer has a 20 MHz band width, and the total DC power requirement is 6 Watts.

  13. Design of Low Power CMOS Read-Out with TDI Function for Infrared Linear Photodiode Array Detectors

    NASA Technical Reports Server (NTRS)

    Vizcaino, Paul; Ramirez-Angulo, Jaime; Patel, Umesh D.

    2007-01-01

    A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of 1uA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiode in a cell if detected as faulty. Simulations are shown that verify the circuit that is currently in fabrication in 0.5ym CMOS technology.

  14. Characterizing Materials Sources and Sinks; Current Approaches: Part II. Chemical and Physical Characterization

    EPA Science Inventory

    The paper discusses methods for characterizing chemical emissions from material sources, including laboratory, dynamic chamber, and full-scale studies. Indoor sources and their interaction with sinks play a major role in determining indoor air quality (IAQ). Techniques for evalua...

  15. End-of-fabrication CMOS process monitor

    NASA Technical Reports Server (NTRS)

    Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hannaman, D. J.; Lieneweg, U.; Lin, Y.-S.; Sayah, H. R.

    1990-01-01

    A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's).

  16. REVIEW AND EVALUATION OF CURRENT METHODS AND USER NEEDS FOR OTHER STATIONARY COMBUSTION SOURCES

    EPA Science Inventory

    The report gives results of Phase 1 of an effort to develop improved methodologies for estimating area source emissions of air pollutants from stationary combustion sources. The report (1) evaluates Area and Mobile Source (AMS) subsystem methodologies; (2) compares AMS results w...

  17. Open Access, Open Source and Digital Libraries: A Current Trend in University Libraries around the World

    ERIC Educational Resources Information Center

    Krishnamurthy, M.

    2008-01-01

    Purpose: The purpose of this paper is to describe the open access and open source movement in the digital library world. Design/methodology/approach: A review of key developments in the open access and open source movement is provided. Findings: Open source software and open access to research findings are of great use to scholars in developing…

  18. Ultrasound Current Source Density Imaging in live rabbit hearts using clinical intracardiac catheter

    NASA Astrophysics Data System (ADS)

    Li, Qian

    Ultrasound Current Source Density Imaging (UCSDI) is a noninvasive modality for mapping electrical activities in the body (brain and heart) in 4-dimensions (space + time). Conventional cardiac mapping technologies for guiding the radiofrequency ablation procedure for treatment of cardiac arrhythmias have certain limitations. UCSDI can potentially overcome these limitations and enhance the electrophysiology mapping of the heart. UCSDI exploits the acoustoelectric (AE) effect, an interaction between ultrasound pressure and electrical resistivity. When an ultrasound beam intersects a current path in a material, the local resistivity of the material is modulated by the ultrasonic pressure, and a change in voltage signal can be detected based on Ohm's Law. The degree of modulation is determined by the AE interaction constant K. K is a fundamental property of any type of material, and directly affects the amplitude of the AE signal detected in UCSDI. UCSDI requires detecting a small AE signal associated with electrocardiogram. So sensitivity becomes a major challenge for transferring UCSDI to the clinic. This dissertation will determine the limits of sensitivity and resolution for UCSDI, balancing the tradeoff between them by finding the optimal parameters for electrical cardiac mapping, and finally test the optimized system in a realistic setting. This work begins by describing a technique for measuring K, the AE interaction constant, in ionic solution and biological tissue, and reporting the value of K in excised rabbit cardiac tissue for the first time. K was found to be strongly dependent on concentration for the divalent salt CuSO4, but not for the monovalent salt NaCl, consistent with their different chemical properties. In the rabbit heart tissue, K was determined to be 0.041 +/- 0.012 %/MPa, similar to the measurement of K in physiologic saline: 0.034 +/- 0.003 %/MPa. Next, this dissertation investigates the sensitivity limit of UCSDI by quantifying the relation

  19. High-Q CMOS-integrated photonic crystal microcavity devices.

    PubMed

    Mehta, Karan K; Orcutt, Jason S; Tehar-Zahav, Ofer; Sternberg, Zvi; Bafrali, Reha; Meade, Roy; Ram, Rajeev J

    2014-01-01

    Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300-9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems.

  20. High-Q CMOS-integrated photonic crystal microcavity devices

    NASA Astrophysics Data System (ADS)

    Mehta, Karan K.; Orcutt, Jason S.; Tehar-Zahav, Ofer; Sternberg, Zvi; Bafrali, Reha; Meade, Roy; Ram, Rajeev J.

    2014-02-01

    Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300-9,300 one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems.

  1. Current state, sources, and potential risk of heavy metals in sediments of Three Gorges Reservoir, China.

    PubMed

    Bing, Haijian; Zhou, Jun; Wu, Yanhong; Wang, Xiaoxiao; Sun, Hongyang; Li, Rui

    2016-07-01

    Heavy metal (HM) contamination in sediments of Three Gorges Reservoir (TGR) is a particularly important issue for the safety of water quality due to the potential threats of metal toxicity to local and downstream human health. Surface sediments from riparian and submerged areas in the entire TGR mainstream were collected in 2014 to investigate the spatial distribution of HMs (Cd, Cu, Pb, and Zn), identify their possible sources, and assess their potential risk by multiple indices and metal fraction. Results showed that the concentrations of HMs in the sediments increased after the TGR operation, but were lower than those in other Chinese rivers of developed areas. The acid-soluble Cd accounted for more than 50% of total Cd in the sediments, whereas that of other HMs was very low. The Cd concentrations in the riparian sediments increased towards the dam; however, other metals in the riparian sediments and all HMs in the submerged sediments did not show any regular variation trend spatially. The stocks of HMs were significantly higher in the submerged sediments than in the riparian sediments. The high accumulation of HMs in the riparian sediments emerged between Fuling and Fengjie, and those in the submerged sediments existed in the near dam areas. Grain size and Fe/Mn oxides controlled the mobility and transfer of HMs in the sediments. Human activity in the catchment including industrial and agricultural production, shipping industry, mining, etc., increased inputs of HMs in the sediments, and altered their spatial distribution patterns. The sediments were moderately to highly contaminated by Cd, and slightly contaminated by other HMs. The results indicate the current priority of Cd contamination in the TGR, and will conduce to ecological protection in the TGR region. PMID:27131806

  2. Current state, sources, and potential risk of heavy metals in sediments of Three Gorges Reservoir, China.

    PubMed

    Bing, Haijian; Zhou, Jun; Wu, Yanhong; Wang, Xiaoxiao; Sun, Hongyang; Li, Rui

    2016-07-01

    Heavy metal (HM) contamination in sediments of Three Gorges Reservoir (TGR) is a particularly important issue for the safety of water quality due to the potential threats of metal toxicity to local and downstream human health. Surface sediments from riparian and submerged areas in the entire TGR mainstream were collected in 2014 to investigate the spatial distribution of HMs (Cd, Cu, Pb, and Zn), identify their possible sources, and assess their potential risk by multiple indices and metal fraction. Results showed that the concentrations of HMs in the sediments increased after the TGR operation, but were lower than those in other Chinese rivers of developed areas. The acid-soluble Cd accounted for more than 50% of total Cd in the sediments, whereas that of other HMs was very low. The Cd concentrations in the riparian sediments increased towards the dam; however, other metals in the riparian sediments and all HMs in the submerged sediments did not show any regular variation trend spatially. The stocks of HMs were significantly higher in the submerged sediments than in the riparian sediments. The high accumulation of HMs in the riparian sediments emerged between Fuling and Fengjie, and those in the submerged sediments existed in the near dam areas. Grain size and Fe/Mn oxides controlled the mobility and transfer of HMs in the sediments. Human activity in the catchment including industrial and agricultural production, shipping industry, mining, etc., increased inputs of HMs in the sediments, and altered their spatial distribution patterns. The sediments were moderately to highly contaminated by Cd, and slightly contaminated by other HMs. The results indicate the current priority of Cd contamination in the TGR, and will conduce to ecological protection in the TGR region.

  3. High performance rf front end circuits using SiGe:C BiCMOS+copper technologies

    NASA Astrophysics Data System (ADS)

    Watanabe, Glenn; Ortiz, Jeff; Holbrook, Rick

    2004-03-01

    Using a first generation standard silicon germanium (SiGe):C HBT BiCMOS process, a personal digital cellular (PDC) LNA noice factor (NF) of 1.0 dB at 850 MHz and 1.2 dB at 1.5 GHz has been achieved. The LNA NF can be further reduced by using the second generation enhanced SiGe:C HBT BiCMOS process. The mixer performance is equally impressive. The NF of the downconversion mixer at 1.5 GHz is just 6.2 dB with a conversion gain of 12 dB. The mixer IIP3 is +9.9 dBm at a current drain of 5.6 mA. Design techniques are given on how to achieve high linearity with minimal current drain resulting in a 881 MHz LNA with an IIP3 of +12.4 dBm with just 6 mA of current and a NF of 1.4 dB using the first generation SiGe:C HBT BiCMOS process. The second generation enhanced SiGe:C HBT BiCMOS process should further reduce the noise figure.

  4. Extracted ion current density in close-coupling multi-antenna type radio frequency driven ion source: CC-MATIS

    SciTech Connect

    Oka, Y. E-mail: oka@LHD.nifs.ac.jp; Shoji, T.

    2014-02-15

    Positive ions are extracted by using a small extractor from the Close-Coupling Multi-Antenna Type radio frequency driven Ion Source. Two types of RF antenna are used. The maximum extracted ion current density reaches 0.106 A/cm{sup 2}. The RF net power efficiency of the extracted ion current density under standard condition is 11.6 mA/cm{sup 2}/kW. The efficiency corresponds to the level of previous beam experiments on elementary designs of multi-antenna sources, and also to the efficiency level of a plasma driven by a filament in the same chamber. The multi-antenna type RF plasma source is promising for all metal high density ion sources in a large volume chamber.

  5. Integration of solid-state nanopores in a 0.5 μm cmos foundry process

    PubMed Central

    Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

    2013-01-01

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor’s 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the N+ polysilicon/SiO2/N+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3 which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3. PMID:23519330

  6. Integration of solid-state nanopores in a 0.5 μm CMOS foundry process.

    PubMed

    Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

    2013-04-19

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA-base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide-semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor's 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the n+ polysilicon/SiO2/n+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3, which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3. PMID:23519330

  7. Radiation Tolerance of 65nm CMOS Transistors

    DOE PAGES

    Krohn, M.; Bentele, B.; Christian, D. C.; Cumalat, J. P.; Deptuch, G.; Fahim, F.; Hoff, J.; Shenai, A.; Wagner, S. R.

    2015-12-11

    We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

  8. SEU hardening of CMOS memory circuit

    NASA Technical Reports Server (NTRS)

    Whitaker, S.; Canaris, J.; Liu, K.

    1990-01-01

    This paper reports a design technique to harden CMOS memory circuits against Single Event Upset (SEU) in the space environment. A RAM cell and Flip Flop design are presented to demonstrate the method. The Flip Flop was used in the control circuitry for a Reed Solomon encoder designed for the Space Station.

  9. Design and realization of CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Xiao, Zexin

    2008-02-01

    A project was presented that instrumental design of an economical CMOS microscope image sensor. A high performance, low price, black-white camera chip OV5116P was used as the core of the sensor circuit; Designing and realizing peripheral control circuit of sensor; Through the control on dial switch to realize different functions of the sensor chip in the system. For example: auto brightness level descending function on or off; gamma correction function on or off; auto and manual backlight compensation mode conversion and so on. The optical interface of sensor is designed for commercialization and standardization. The images of sample were respectively gathered with CCD and CMOS. Result of the experiment indicates that both performances were identical in several aspects as follows: image definition, contrast control, heating degree and the function can be adjusted according to the demand of user etc. The imperfection was that the CMOS with smaller field and higher noise than CCD; nevertheless, the maximal advantage of choosing the CMOS chip is its low cost. And its imaging quality conformed to requirement of the economical microscope image sensor.

  10. Fully CMOS-compatible titanium nitride nanoantennas

    NASA Astrophysics Data System (ADS)

    Briggs, Justin A.; Naik, Gururaj V.; Petach, Trevor A.; Baum, Brian K.; Goldhaber-Gordon, David; Dionne, Jennifer A.

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  11. CMOS preamplifiers for detectors large and small

    SciTech Connect

    O`Connor, P.

    1997-12-31

    We describe four CMOS preamplifiers developed for multiwire proportional chambers (MWPC) and silicon drift detectors (SDD) covering a capacitance range from 150 pF to 0.15 pF. Circuit techniques to optimize noise performance, particularly in the low-capacitance regime, are discussed.

  12. Improving CMOS-compatible Germanium photodetectors.

    PubMed

    Li, Guoliang; Luo, Ying; Zheng, Xuezhe; Masini, Gianlorenzo; Mekis, Attila; Sahni, Subal; Thacker, Hiren; Yao, Jin; Shubin, Ivan; Raj, Kannan; Cunningham, John E; Krishnamoorthy, Ashok V

    2012-11-19

    We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 μm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.

  13. A fail-safe CMOS logic gate

    NASA Technical Reports Server (NTRS)

    Bobin, V.; Whitaker, S.

    1990-01-01

    This paper reports a design technique to make Complex CMOS Gates fail-safe for a class of faults. Two classes of faults are defined. The fail-safe design presented has limited fault-tolerance capability. Multiple faults are also covered.

  14. The Research of Static Var Compensator's Time Characteristics and System-level Model of Controlled Current Source

    NASA Astrophysics Data System (ADS)

    Zhang, Chao; Jiang, Qi-rong; Sun, Shou-xin

    In the status of lacking research on response time of static var compensator (SVC), this paper established the controlled current source model which can achieve the same effect in response time and reactive compensation with the physical model of SVC by analyzing of characteristics in reactive power compensation and the response of the static var compensator (SVC) physical model. Through the time module in control signal of controlled current source, it can accurately calculate the response time of SVC. It tested the consistency of two models through the simulation of a rolling mill start experiment in PSCAD.

  15. Low-Power SOI CMOS Transceiver

    NASA Technical Reports Server (NTRS)

    Fujikawa, Gene (Technical Monitor); Cheruiyot, K.; Cothern, J.; Huang, D.; Singh, S.; Zencir, E.; Dogan, N.

    2003-01-01

    The work aims at developing a low-power Silicon on Insulator Complementary Metal Oxide Semiconductor (SOI CMOS) Transceiver for deep-space communications. RF Receiver must accomplish the following tasks: (a) Select the desired radio channel and reject other radio signals, (b) Amplify the desired radio signal and translate them back to baseband, and (c) Detect and decode the information with Low BER. In order to minimize cost and achieve high level of integration, receiver architecture should use least number of external filters and passive components. It should also consume least amount of power to minimize battery cost, size, and weight. One of the most stringent requirements for deep-space communication is the low-power operation. Our study identified that two candidate architectures listed in the following meet these requirements: (1) Low-IF receiver, (2) Sub-sampling receiver. The low-IF receiver uses minimum number of external components. Compared to Zero-IF (Direct conversion) architecture, it has less severe offset and flicker noise problems. The Sub-sampling receiver amplifies the RF signal and samples it using track-and-hold Subsampling mixer. These architectures provide low-power solution for the short- range communications missions on Mars. Accomplishments to date include: (1) System-level design and simulation of a Double-Differential PSK receiver, (2) Implementation of Honeywell SOI CMOS process design kit (PDK) in Cadence design tools, (3) Design of test circuits to investigate relationships between layout techniques, geometry, and low-frequency noise in SOI CMOS, (4) Model development and verification of on-chip spiral inductors in SOI CMOS process, (5) Design/implementation of low-power low-noise amplifier (LNA) and mixer for low-IF receiver, and (6) Design/implementation of high-gain LNA for sub-sampling receiver. Our initial results show that substantial improvement in power consumption is achieved using SOI CMOS as compared to standard CMOS

  16. Subthreshold Current and Swing Modeling of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

    NASA Astrophysics Data System (ADS)

    Singh, Kunal; Kumar, Sanjay; Goel, Ekta; Singh, Balraj; Kumar, Mirgender; Dubey, Sarvesh; Jit, Satyabrata

    2016-09-01

    This paper proposes a new model for the subthreshold current and swing of the short-channel symmetric underlap ultrathin double gate metal oxide field effect transistors with a source/drain lateral Gaussian doping profile. The channel potential model already reported earlier has been utilized to formulate the closed form expression for the subthreshold current and swing of the device. The effects of the lateral straggle and geometrical parameters such as the channel length, channel thickness, and oxide thickness on the off current and subthreshold slope have been demonstrated. The devices with source/drain lateral Gaussian doping profiles in the underlap structure are observed to be highly resistant to short channel effects while improving the current drive. The proposed model is validated by comparing the results with the numerical simulation data obtained by using the commercially available ATLAS™, a two-dimensional (2-D) device simulator from SILVACO.

  17. Management of agricultural nonpoint source pollution in China: current status and challenges.

    PubMed

    Wang, Xiaoyan

    2006-01-01

    Water quality in China shows an overall trend of deterioration in recent years. Nonpoint source pollution from agricultural and rural regions is the leading source of water pollution. The agricultural nonpoint source pollutants are mainly from fertilization of cropland, excessive livestock and poultry breeding and undefined disposal of daily living wastes in rural areas. Agricultural nonpoint sources contribute the main source of pollution to most watersheds in China, but they are ignored in management strategy and policy. Due to the lack of full understanding of water pollution control and management and the lack of perfect water quality standard systems and practical legislative regulations, agricultural nonpoint source pollution will become one of the biggest challenges to the sustainable development of rural areas and to society as a whole. The system for agricultural nonpoint source pollution control in China should include an appropriate legislation and policy framework, financing mechanisms, monitoring system, and technical guidelines and standards. The management of agricultural nonpoint source pollution requires multidisciplinary approaches that will involve a range of government departments, institutions and the public.

  18. Management of agricultural nonpoint source pollution in China: current status and challenges.

    PubMed

    Wang, Xiaoyan

    2006-01-01

    Water quality in China shows an overall trend of deterioration in recent years. Nonpoint source pollution from agricultural and rural regions is the leading source of water pollution. The agricultural nonpoint source pollutants are mainly from fertilization of cropland, excessive livestock and poultry breeding and undefined disposal of daily living wastes in rural areas. Agricultural nonpoint sources contribute the main source of pollution to most watersheds in China, but they are ignored in management strategy and policy. Due to the lack of full understanding of water pollution control and management and the lack of perfect water quality standard systems and practical legislative regulations, agricultural nonpoint source pollution will become one of the biggest challenges to the sustainable development of rural areas and to society as a whole. The system for agricultural nonpoint source pollution control in China should include an appropriate legislation and policy framework, financing mechanisms, monitoring system, and technical guidelines and standards. The management of agricultural nonpoint source pollution requires multidisciplinary approaches that will involve a range of government departments, institutions and the public. PMID:16594318

  19. CMOS MEMS capacitive absolute pressure sensor

    NASA Astrophysics Data System (ADS)

    Narducci, M.; Yu-Chia, L.; Fang, W.; Tsai, J.

    2013-05-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal-oxide-semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa-1 in the pressure range of 0-300 kPa.

  20. A CMOS-MEMS arrayed resonant-gate field effect transistor (RGFET) oscillator

    NASA Astrophysics Data System (ADS)

    Chin, Chi-Hang; Li, Ming-Huang; Chen, Chao-Yu; Wang, Yu-Lin; Li, Sheng-Shian

    2015-11-01

    A high-frequency CMOS-MEMS arrayed resonant-gate field effect transistor (RGFET) fabricated by a standard 0.35 μm 2-poly-4-metal CMOS-MEMS platform is implemented to enable a Pierce-type oscillator. The proposed arrayed RGFET exhibits low motional impedance of only 5 kΩ under a purely capacitive transduction and decent power handling capability. With such features, the implemented oscillator shows impressive phase noise of  -117 dBc Hz-1 at the far-from-carrier offset (1 MHz). In this work, we design a clamped-clamped beam (CCB) arrayed resonator utilizing a high-velocity mechanical coupling scheme to serve as the resonant-gate array. To achieve a functional arrayed RGFET, a corresponding FET array is directly placed underneath the resonant gate array to convert the motional current on the resonant-gate array into a voltage output with a tunable transconductance gain. To understand the behavior of the proposed device, an equivalent circuit model consisting of the resonant unit and FET is also provided. To verify the effects of the post-CMOS process on device performance, a conventional MOS I D current measurement is carried out. Finally, a CMOS-MEMS arrayed RGFET oscillator is realized by utilizing a Pierce oscillator architecture, showing decent phase noise performance that benefits from the array design to alleviate the nonlinear effect of the resonant gate.

  1. Overview of CMOS process and design options for image sensor dedicated to space applications

    NASA Astrophysics Data System (ADS)

    Martin-Gonthier, P.; Magnan, P.; Corbiere, F.

    2005-10-01

    With the growth of huge volume markets (mobile phones, digital cameras...) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain. Space applications can of course benefit from these improvements. To illustrate this evolution, this paper reports results from three technologies that have been evaluated with test vehicles composed of several sub arrays designed with some space applications as target. These three technologies are CMOS standard, improved and sensor optimized process in 0.35μm generation. Measurements are focussed on quantum efficiency, dark current, conversion gain and noise. Other measurements such as Modulation Transfer Function (MTF) and crosstalk are depicted in [1]. A comparison between results has been done and three categories of CMOS process for image sensors have been listed. Radiation tolerance has been also studied for the CMOS improved process in the way of hardening the imager by design. Results at 4, 15, 25 and 50 krad prove a good ionizing dose radiation tolerance applying specific techniques.

  2. Gas field ion source current stability for trimer and single atom terminated W(111) tips

    SciTech Connect

    Urban, Radovan; Wolkow, Robert A.; Pitters, Jason L.

    2012-06-25

    Tungsten W(111) oriented trimer-terminated tips as well as single atom tips, fabricated by a gas and field assisted etching and evaporation process, were investigated with a view to scanning ion microscopy and ion beam writing applications. In particular, ion current stability was studied for helium and neon imaging gases. Large ion current fluctuations from individual atomic sites were observed when a trimer-terminated tip was used for the creation of neon ion beam. However, neon ion current was stable when a single atom tip was employed. No such current oscillations were observed for either a trimer or a single atom tip when imaged with helium.

  3. A low voltage CMOS low drop-out voltage regulator

    NASA Astrophysics Data System (ADS)

    Bakr, Salma Ali; Abbasi, Tanvir Ahmad; Abbasi, Mohammas Suhaib; Aldessouky, Mohamed Samir; Abbasi, Mohammad Usaid

    2009-05-01

    A low voltage implementation of a CMOS Low Drop-Out voltage regulator (LDO) is presented. The requirement of low voltage devices is crucial for portable devices that require extensive computations in a low power environment. The LDO is implemented in 90nm generic CMOS technology. It generates a fixed 0.8V from a 2.5V supply which on discharging goes to 1V. The buffer stage used is unity gain configured unbuffered OpAmp with rail-to-rail swing input stage. The simulation result shows that the implemented circuit provides load regulation of 0.004%/mA and line regulation of -11.09mV/V. The LDO provides full load transient response with a settling time of 5.2μs. Further, the dropout voltage is 200mV and the quiescent current through the pass transistor (Iload=0) is 20μA. The total power consumption of this LDO (excluding bandgap reference) is only 80μW.

  4. Single donor electronics and quantum functionalities with advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Jehl, Xavier; Niquet, Yann-Michel; Sanquer, Marc

    2016-03-01

    Recent progresses in quantum dots technology allow fundamental studies of single donors in various semiconductor nanostructures. For the prospect of applications figures of merits such as scalability, tunability, and operation at relatively large temperature are of prime importance. Beyond the case of actual dopant atoms in a host crystal, similar arguments hold for small enough quantum dots which behave as artificial atoms, for instance for single spin control and manipulation. In this context, this experimental review focuses on the silicon-on-insulator devices produced within microelectronics facilities with only very minor modifications to the current industrial CMOS process and tools. This is required for scalability and enabled by shallow trench or mesa isolation. It also paves the way for real integration with conventional circuits, as illustrated by a nanoscale device coupled to a CMOS circuit producing a radio-frequency drive on-chip. At the device level we emphasize the central role of electrostatics in etched silicon nanowire transistors, which allows to understand the characteristics in the full range from zero to room temperature.

  5. CMOS-TDI detector technology for reconnaissance application

    NASA Astrophysics Data System (ADS)

    Eckardt, Andreas; Reulke, Ralf; Jung, Melanie; Sengebusch, Karsten

    2014-10-01

    The Institute of Optical Sensor Systems (OS) at the Robotics and Mechatronics Center of the German Aerospace Center (DLR) has more than 30 years of experience with high-resolution imaging technology. This paper shows the institute's scientific results of the leading-edge detector design CMOS in a TDI (Time Delay and Integration) architecture. This project includes the technological design of future high or multi-spectral resolution spaceborne instruments and the possibility of higher integration. DLR OS and the Fraunhofer Institute for Microelectronic Circuits and Systems (IMS) in Duisburg were driving the technology of new detectors and the FPA design for future projects, new manufacturing accuracy and on-chip processing capability in order to keep pace with the ambitious scientific and user requirements. In combination with the engineering research, the current generation of space borne sensor systems is focusing on VIS/NIR high spectral resolution to meet the requirements on earth and planetary observation systems. The combination of large-swath and high-spectral resolution with intelligent synchronization control, fast-readout ADC (analog digital converter) chains and new focal-plane concepts opens the door to new remote-sensing and smart deep-space instruments. The paper gives an overview of the detector development status and verification program at DLR, as well as of new control possibilities for CMOS-TDI detectors in synchronization control mode.

  6. Single phase dynamic CMOS PLA using charge sharing technique

    NASA Technical Reports Server (NTRS)

    Dhong, Y. B.; Tsang, C. P.

    1991-01-01

    A single phase dynamic CMOS NOR-NOR programmable logic array (PLA) using triggered decoders and charge sharing techniques for high speed and low power is presented. By using the triggered decoder technique, the ground switches are eliminated, thereby, making this new design much faster and lower power dissipation than conventional PLA's. By using the charge-sharing technique in a dynamic CMOS NOR structure, a cascading AND gate can be implemented. The proposed PLA's are presented with a delay-time of 15.95 and 18.05 nsec, respectively, which compare with a conventional single phase PLA with 35.5 nsec delay-time. For a typical example of PLA like the Signetics 82S100 with 16 inputs, 48 input minterms (m) and 8 output minterms (n), the 2-SOP PLA using the triggered 2-bit decoder is 2.23 times faster and has 2.1 times less power dissipation than the conventional PLA. These results are simulated using maximum drain current of 600 micro-A, gate length of 2.0 micron, V sub DD of 5 V, the capacitance of an input miniterm of 1600 fF, and the capacitance of an output minterm of 1500 fF.

  7. Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

    PubMed Central

    Boukhayma, Assim; Peizerat, Arnaud; Enz, Christian

    2016-01-01

    This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level optimizations, device choices and circuit techniques at the pixel and column level of the readout chain are derived and discussed. The noise reduction techniques that can be implemented at the column and pixel level are verified by transient noise simulations, measurement and results from recently-published low noise CIS. We show how recently-reported process refinement, leading to the reduction of the sense node capacitance, can be combined with an optimal in-pixel source follower design to reach a sub-0.3erms- read noise at room temperature. This paper also discusses the impact of technology scaling on the CIS read noise. It shows how designers can take advantage of scaling and how the Metal-Oxide-Semiconductor (MOS) transistor gate leakage tunneling current appears as a challenging limitation. For this purpose, both simulation results of the gate leakage current and 1/f noise data reported from different foundries and technology nodes are used.

  8. Current understanding in source control management in septic shock patients: a review

    PubMed Central

    Encina, Belen; Ramirez-Estrada, Sergio

    2016-01-01

    Sepsis and septic shock is one of the leading causes of death worldwide. Antibiotics, fluid resuscitation support of vital organ function and source control are the cornerstones for the treatment of these patients. Source control measures include all those actions taken in the process of care to control the foci of infection and to restore optimal function of the site of infection. Source control represents the multidisciplinary team required in order to optimize critical care for septic shock patients. In the last decade an increase interest on fluids, vasopressors, antibiotics, and organ support techniques in all aspects whether time, dose and type of any of those have been described. However information of source control measures involving minimal invasion and new techniques, time of action and outcome without it, is scarce. In this review the authors resumes new information, recommendations and future directions on this matter when facing the more common types of infections. PMID:27713888

  9. Ion current detector for high pressure ion sources for monitoring separations

    DOEpatents

    Smith, Richard D.; Wahl, Jon H.; Hofstadler, Steven A.

    1996-01-01

    The present invention relates generally to any application involving the monitoring of signal arising from ions produced by electrospray or other high pressure (>100 torr) ion sources. The present invention relates specifically to an apparatus and method for the detection of ions emitted from a capillary electrophoresis (CE) system, liquid chromatography, or other small-scale separation methods. And further, the invention provides a very simple diagnostic as to the quality of the separation and the operation of an electrospray source.

  10. Ion current detector for high pressure ion sources for monitoring separations

    DOEpatents

    Smith, R.D.; Wahl, J.H.; Hofstadler, S.A.

    1996-08-13

    The present invention relates generally to any application involving the monitoring of signal arising from ions produced by electrospray or other high pressure (>100 torr) ion sources. The present invention relates specifically to an apparatus and method for the detection of ions emitted from a capillary electrophoresis (CE) system, liquid chromatography, or other small-scale separation methods. And further, the invention provides a very simple diagnostic as to the quality of the separation and the operation of an electrospray source. 7 figs.

  11. A cookbook for building a high-current dimpled H magnetron source for accelerators

    SciTech Connect

    Bollinger, Daniel S.; Karns, Patrick R.; Tan, Cheng -Yang

    2015-10-30

    A high-current (>50 mA) dimpled H magnetron source has been built at Fermilab for supplying H beam to the entire accelerator complex. Despite many decades of expertise with slit H magnetron sources at Fermilab, we were faced with many challenges from the dimpled H magnetron source, which needed to be overcome in order to make it operational. Dimpled H sources for high-energy physics are not new: Brookhaven National Laboratory has operated a dimpled H- source for more than two decades. However, the transference of that experience to Fermilab took about two years because a cookbook for building this type of source did not exist and seemingly innocuous or undocumented choices had a huge impact on the success or failure for this type of source. Moreover, it is the goal of this paper to document the reasons for these choices and to present a cookbook for building and operating dimpled H magnetron sources.

  12. Resting State Functional Connectivity MRI among Spectral MEG Current Sources in Children on the Autism Spectrum

    PubMed Central

    Datko, Michael; Gougelet, Robert; Huang, Ming-Xiong; Pineda, Jaime A.

    2016-01-01

    Social and communicative impairments are among the core symptoms of autism spectrum disorders (ASD), and a great deal of evidence supports the notion that these impairments are associated with aberrant functioning and connectivity of various cortical networks. The present study explored the links between sources of MEG amplitude in various frequency bands and functional connectivity MRI in the resting state. The goal of combining these modalities was to use sources of neural oscillatory activity, measured with MEG, as functionally relevant seed regions for a more traditional pairwise fMRI connectivity analysis. We performed a seed-based connectivity analysis on resting state fMRI data, using seed regions derived from frequency-specific amplitude sources in resting state MEG data in the same nine subjects with ASD (10–17 years of age). We then compared fMRI connectivity among these MEG-source-derived regions between participants with autism and typically developing, age-matched controls. We used a source modeling technique designed for MEG data to detect significant amplitude sources in six frequency bands: delta (2–4 Hz), theta (4–8 Hz), alpha (8–12 Hz), beta (12–30 Hz), low gamma (30–60 Hz), and high gamma (60–120 Hz). MEG-derived source maps for each participant were co-registered in standard MNI space, and group-level source maps were obtained for each frequency. For each frequency band, the 10 largest clusters resulting from these t-tests were used as regions of interest (ROIs) for the fMRI functional connectivity analysis. Pairwise BOLD signal correlations were obtained between each pair of these ROIs for each frequency band. Each pairwise correlation was compared between the ASD and TD groups using t-tests. We also constrained these pairwise correlations to known network structures, resulting in a follow-up set of correlation matrices specific to each network we considered. Frequency-specific MEG sources had distinct patterns of fMRI resting

  13. Resting State Functional Connectivity MRI among Spectral MEG Current Sources in Children on the Autism Spectrum.

    PubMed

    Datko, Michael; Gougelet, Robert; Huang, Ming-Xiong; Pineda, Jaime A

    2016-01-01

    Social and communicative impairments are among the core symptoms of autism spectrum disorders (ASD), and a great deal of evidence supports the notion that these impairments are associated with aberrant functioning and connectivity of various cortical networks. The present study explored the links between sources of MEG amplitude in various frequency bands and functional connectivity MRI in the resting state. The goal of combining these modalities was to use sources of neural oscillatory activity, measured with MEG, as functionally relevant seed regions for a more traditional pairwise fMRI connectivity analysis. We performed a seed-based connectivity analysis on resting state fMRI data, using seed regions derived from frequency-specific amplitude sources in resting state MEG data in the same nine subjects with ASD (10-17 years of age). We then compared fMRI connectivity among these MEG-source-derived regions between participants with autism and typically developing, age-matched controls. We used a source modeling technique designed for MEG data to detect significant amplitude sources in six frequency bands: delta (2-4 Hz), theta (4-8 Hz), alpha (8-12 Hz), beta (12-30 Hz), low gamma (30-60 Hz), and high gamma (60-120 Hz). MEG-derived source maps for each participant were co-registered in standard MNI space, and group-level source maps were obtained for each frequency. For each frequency band, the 10 largest clusters resulting from these t-tests were used as regions of interest (ROIs) for the fMRI functional connectivity analysis. Pairwise BOLD signal correlations were obtained between each pair of these ROIs for each frequency band. Each pairwise correlation was compared between the ASD and TD groups using t-tests. We also constrained these pairwise correlations to known network structures, resulting in a follow-up set of correlation matrices specific to each network we considered. Frequency-specific MEG sources had distinct patterns of fMRI resting state functional

  14. A comparison of two-dimensional techniques for converting magnetocardiogram maps into effective current source distributions

    NASA Astrophysics Data System (ADS)

    Ogata, K.; Kandori, A.; Miyashita, T.; Sekihara, K.; Tsukada, K.

    2011-01-01

    The aim of this study was to develop a method for converting the pseudo two-dimensional current given by a current-arrow map (CAM) into the physical current. The physical current distribution is obtained by the optimal solution in a least mean square sense with Tikhonov regularization (LMSTR). In the current dipole simulation, the current pattern differences (ΔJ) between the results of the CAM and the LMSTR with several regularization parameters (α = 10-1-10-15) are calculated. In magnetocardiographic (MCG) analysis, the depth (zd) of a reconstruction plane is chosen by using the coordinates of the sinus node, which is estimated from MCG signals at the early p-wave. The ΔJs at p-wave peaks, QRS-complex peaks, and T-wave peaks of MCG signals for healthy subjects are calculated. Furthermore, correlation coefficients and regression lines are also calculated from the current values of the CAM and the LMSTR during p-waves, QRS-complex, and T-waves of MCG signals. In the simulation, the ΔJs (α ≈ 10-10) had a minimal value. The ΔJs (α = 10-10) at p-wave peaks, QRS-complex peaks, and T-wave peaks of MCG signals for healthy subjects also had minimal value. The correlation coefficients of the current values given by the CAM and the LMSTR (α = 10-10) were greater than 0.9. Furthermore, slopes (y) of the regression lines are correlated with the depth (zd) (r = -0.93). Consequently, the CAM value can be transformed into the LMSTR current value by multiplying it by the slope (y) obtained from the depth (zd). In conclusion, the result given by the CAM can be converted into an effective physical current distribution by using the depth (zd).

  15. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

    DOE PAGES

    Black, Dolores Archuleta; Robinson, William H.; Wilcox, Ian Zachary; Limbrick, Daniel B.; Black, Jeffrey D.

    2015-08-07

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. Likewise, an accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventionalmore » model based on one double-exponential source can be incomplete. Furthermore, a small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. As a result, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.« less

  16. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

    SciTech Connect

    Black, Dolores Archuleta; Robinson, William H.; Wilcox, Ian Zachary; Limbrick, Daniel B.; Black, Jeffrey D.

    2015-08-07

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. Likewise, an accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. Furthermore, a small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. As a result, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

  17. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

    SciTech Connect

    Black, Dolores A.; Robinson, William H.; Limbrick, Daniel B.; Black, Jeffrey D.; Wilcox, Ian Z.

    2015-08-07

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. Furthermore, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

  18. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

    DOE PAGES

    Black, Dolores A.; Robinson, William H.; Limbrick, Daniel B.; Black, Jeffrey D.; Wilcox, Ian Z.

    2015-08-07

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional modelmore » based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. Furthermore, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.« less

  19. Novelty P3 reductions in depression: characterization using principal components analysis (PCA) of current source density (CSD) waveforms.

    PubMed

    Tenke, Craig E; Kayser, Jürgen; Stewart, Jonathan W; Bruder, Gerard E

    2010-01-01

    We previously reported a novelty P3 reduction in depressed patients compared to healthy controls (n=20 per group) in a novelty oddball task using a 31-channel montage. In an independent replication and extension using a 67-channel montage (n=49 per group), reference-free current source density (CSD) waveforms were simplified and quantified by a temporal, covariance-based principal components analysis (PCA) (unrestricted Varimax rotation), yielding factor solutions consistent with other oddball tasks. A factor with a loadings peak at 343 ms summarized the target P3b source as well as a secondary midline frontocentral source for novels and targets. An earlier novelty vertex source (NVS) at 241 ms was present for novels, but not targets, and was reduced in patients. Compatible CSD-PCA findings were also confirmed for the original low-density sample. Results are consistent with a reduced novelty response in clinical depression, involving the early phase of the frontocentral novelty P3.

  20. Microbial Source Tracking: Current and Future Molecular Tools in Microbial Water Quality Forensics

    EPA Science Inventory

    Current regulations in the United States stipulate that the microbial quality of waters used for consumption and recreational activities should be determined regularly by measuring microbial indicators of fecal pollution. Hence, the microbial risk associated with these waters is...

  1. Review on high current 2.45 GHz electron cyclotron resonance sources (invited).

    PubMed

    Gammino, S; Celona, L; Ciavola, G; Maimone, F; Mascali, D

    2010-02-01

    The suitable source for the production of intense beams for high power accelerators must obey to the request of high brightness, stability, and reliability. The 2.45 GHz off-resonance microwave discharge sources are the ideal device to generate the requested beams, as they produce multimilliampere beams of protons, deuterons, and monocharged ions, remaining stable for several weeks without maintenance. A description of different technical designs will be given, analyzing their strength, and weakness, with regard to the extraction system and low energy beam transport line, as the presence of beam halo is detrimental for the accelerator.

  2. Coulomb collisions of ring current particles: Indirect source of heat for the ionosphere

    NASA Technical Reports Server (NTRS)

    Cole, K. D.

    1975-01-01

    The additional energy requirements of the topside ionosphere during a magnetic storm are less than one quarter of the ring current energy. This energy is supplied largely by Coulomb collisions of ring current protons of energy less than about 20 keV with background thermal electrons which conduct the heat to the ionosphere. Past criticisms are discussed of this mechanism for the supply of energy to the SAR-arc and neighboring regions of the ionosphere.

  3. 40- to 60-day oscillation in the source region of the Somali Current during 1976

    SciTech Connect

    Mysak, L.A.; Mertz, G.J.

    1984-01-20

    Evidence is presented for a 40- and 60-day oscillation in the longshore current and temperature fluctuations that were measured during 1976 in the Somali Current regime off Kenya by Dueing and Schott (1978). It is suggested that this equatorial oceanic oscillations is excited by long-period local wind fluctuations which are associated with the global tropical 40- to 50-day day oscillation first detected by Madden and Julian (1971,1972).

  4. A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping

    NASA Astrophysics Data System (ADS)

    Dash, Sidhartha; Jena, Biswajit; Mishra, Guru Prasad

    2016-09-01

    A new δ-doped cylindrical gate silicon tunnel FET (DCG-TFET) analytical model is developed and investigated extensively, with the aim of addressing the challenges of the conventional CG-TFET. The improvement in tunneling probability of charge carriers has been achieved by inserting a δ-doping sheet in the source region which leads to high drain current as compared to CG-TFET. The effect of distance between the δ-doping sheet and source/channel interface on the current performance, sub-threshold swing (SS) and threshold voltage (Vth) has been examined. The instantaneous position of δ-doping region from the tunneling junction is optimized based on the trade-off between current ratio and SS. The present model exhibit maximum switching current ratio (ION/IOFF ≅1012) for an optimum distance of 2 nm without degrading SS (SS˜55 mV/decade) and Vth performance. The electrostatic behavior of the present model is obtained using the solution of Poisson's equation in the cylindrical coordinate system. However the impact of scaling of the gate oxide thickness and cylindrical pillar diameter on drain current performance has been discussed. In future, DCG-TFET can be one of the potential successors for ultra-low-power applications because of its improved drain current and switching ratio.

  5. A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping

    NASA Astrophysics Data System (ADS)

    Dash, Sidhartha; Jena, Biswajit; Mishra, Guru Prasad

    2016-09-01

    A new δ-doped cylindrical gate silicon tunnel FET (DCG-TFET) analytical model is developed and investigated extensively, with the aim of addressing the challenges of the conventional CG-TFET. The improvement in tunneling probability of charge carriers has been achieved by inserting a δ-doping sheet in the source region which leads to high drain current as compared to CG-TFET. The effect of distance between the δ-doping sheet and source/channel interface on the current performance, sub-threshold swing (SS) and threshold voltage (Vth) has been examined. The instantaneous position of δ-doping region from the tunneling junction is optimized based on the trade-off between current ratio and SS. The present model exhibit maximum switching current ratio (ION/IOFF ≅1012) for an optimum distance of 2 nm without degrading SS (SS∼55 mV/decade) and Vth performance. The electrostatic behavior of the present model is obtained using the solution of Poisson's equation in the cylindrical coordinate system. However the impact of scaling of the gate oxide thickness and cylindrical pillar diameter on drain current performance has been discussed. In future, DCG-TFET can be one of the potential successors for ultra-low-power applications because of its improved drain current and switching ratio.

  6. Programmed Instruction in Business and Industry, Current Information Sources, No. 28.

    ERIC Educational Resources Information Center

    Syracuse Univ., NY. ERIC Clearinghouse on Adult Education.

    Covering the period since 1960, this annotated bibliography contains 97 items (most with abstracts) relevant to programed instruction in business and industry. The following appear: (1) 12 bibliographies, directories, and information sources, both foreign and domestic; (2) general considerations of programed instruction as a training technique (26…

  7. Cmos spdt switch for wlan applications

    NASA Astrophysics Data System (ADS)

    Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

    2015-04-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

  8. Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker

    NASA Astrophysics Data System (ADS)

    Rizzo, G.; Comott, D.; Manghisoni, M.; Re, V.; Traversi, G.; Fabbri, L.; Gabrielli, A.; Giorgi, F.; Pellegrini, G.; Sbarra, C.; Semprini-Cesari, N.; Valentinetti, S.; Villa, M.; Zoccoli, A.; Berra, A.; Lietti, D.; Prest, M.; Bevan, A.; Wilson, F.; Beck, G.; Morris, J.; Gannaway, F.; Cenci, R.; Bombelli, L.; Citterio, M.; Coelli, S.; Fiorini, C.; Liberali, V.; Monti, M.; Nasri, B.; Neri, N.; Palombo, F.; Stabile, A.; Balestri, G.; Batignani, G.; Bernardelli, A.; Bettarini, S.; Bosi, F.; Casarosa, G.; Ceccanti, M.; Forti, F.; Giorgi, M. A.; Lusiani, A.; Mammini, P.; Morsani, F.; Oberhof, B.; Paoloni, E.; Perez, A.; Petragnani, G.; Profeti, A.; Soldani, A.; Walsh, J.; Chrzaszcz, M.; Gaioni, L.; Manazza, A.; Quartieri, E.; Ratti, L.; Zucca, S.; Alampi, G.; Cotto, G.; Gamba, D.; Zambito, S.; Dalla Betta, G.-F.; Fontana, G.; Pancheri, L.; Povoli, M.; Verzellesi, G.; Bomben, M.; Bosisio, L.; Cristaudo, P.; Lanceri, L.; Liberti, B.; Rashevskaya, I.; Stella, C.; Vitale, L.

    2013-08-01

    In the design of the Silicon Vertex Tracker for the high luminosity SuperB collider, very challenging requirements are set by physics and background conditions on its innermost Layer0: small radius (about 1.5 cm), resolution of 10 - 15 μm in both coordinates, low material budget < 1 %X0, and the ability to withstand a background hit rate of several tens of MHz /cm2. Thanks to an intense R&D program the development of Deep NWell CMOS MAPS (with the ST Microelectronics 130 nm process) has reached a good level of maturity and allowed for the first time the implementation of thin CMOS sensors with similar functionalities as in hybrid pixels, such as pixel-level sparsification and fast time stamping. Further MAPS performance improvements are currently under investigation with two different approaches: the INMAPS CMOS process, featuring a quadruple well and a high resistivity substrate, and 3D CMOS MAPS, realized with vertical integration technology. In both cases specific features of the processes chosen can improve charge collection efficiency, with respect to a standard DNW MAPS design, and allow to implement a more complex in-pixel logic in order to develop a faster readout architecture. Prototypes of MAPS matrix, suitable for application in the SuperB Layer0, have been realized with the INMAPS 180 nm process and the 130 nm Chartered/Tezzaron 3D process and results of their characterization will be presented in this paper.

  9. Front-end receiver electronics for high-frequency monolithic CMUT-on-CMOS imaging arrays.

    PubMed

    Gurun, Gokce; Hasler, Paul; Degertekin, F

    2011-08-01

    This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for highfrequency intravascular ultrasound imaging. A custom 8-inch (20-cm) wafer is fabricated in a 0.35-μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range, and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input-referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulseecho measurement. Transducer-noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 to 20 MHz.

  10. CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

    PubMed

    Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

    2011-04-01

    In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

  11. CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

    PubMed

    Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

    2011-04-01

    In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply. PMID:23851206

  12. A CMOS detection chip for amperometric sensors with chopper stabilized incremental ΔΣ ADC

    NASA Astrophysics Data System (ADS)

    Min, Chen; Yuntao, Liu; Jingbo, Xiao; Jie, Chen

    2016-06-01

    This paper presents a low noise complimentary metal-oxide-semiconductor (CMOS) detection chip for amperometric electrochemical sensors. In order to effectively remove the input offset of the cascaded integrators and the low frequency noise in the modulator, a novel offset cancellation chopping scheme was proposed in the Incremental ΔΣ analog to digital converter (IADC). A novel low power potentiostat was employed in this chip to provide the biasing voltage for the sensor while mirroring the sensor current out for detection. The chip communicates with FPGA through standard built in I2C interface and SPI bus. Fabricated in 0.18-μm CMOS process, this chip detects current signal with high accuracy and high linearity. A prototype microsystem was produced to verify the detection chip performance with current input as well as micro-sensors. Project supported by the State Key Development Program for Basic Research of China (No. 2015CB352100).

  13. A CMOS detection chip for amperometric sensors with chopper stabilized incremental ΔΣ ADC

    NASA Astrophysics Data System (ADS)

    Min, Chen; Yuntao, Liu; Jingbo, Xiao; Jie, Chen

    2016-06-01

    This paper presents a low noise complimentary metal–oxide-semiconductor (CMOS) detection chip for amperometric electrochemical sensors. In order to effectively remove the input offset of the cascaded integrators and the low frequency noise in the modulator, a novel offset cancellation chopping scheme was proposed in the Incremental ΔΣ analog to digital converter (IADC). A novel low power potentiostat was employed in this chip to provide the biasing voltage for the sensor while mirroring the sensor current out for detection. The chip communicates with FPGA through standard built in I2C interface and SPI bus. Fabricated in 0.18-μm CMOS process, this chip detects current signal with high accuracy and high linearity. A prototype microsystem was produced to verify the detection chip performance with current input as well as micro-sensors. Project supported by the State Key Development Program for Basic Research of China (No. 2015CB352100).

  14. The Spatial Variation of Membrane Potential Near a Small Source of Current in a Spherical Cell

    PubMed Central

    Eisenberg, R. S.; Engel, E.

    1970-01-01

    A theoretical analysis is presented of the change in membrane potential produced by current supplied by a microelectrode inserted just under the membrane of a spherical cell. The results of the analysis are presented in tabular and graphic form for three wave forms of current: steady, step function, and sinusoidal. As expected from physical reasoning, we find that the membrane potential is nonuniform, that there is a steep rise in membrane potential near the current microelectrode, and that this rise is of particular importance when the membrane resistance is low, or the membrane potential is changing rapidly. The effect of this steep rise in potential on the interpretation of voltage measurements from spherical cells is discussed and practical suggestions for minimizing these effects are made: in particular, it is pointed out that if the current and voltage electrodes are separated by 60°, the change in membrane potential produced by application of current is close to that which would occur if there were no spatial variation of potential. We thus suggest that investigations of the electrical properties of spherical cells using two microelectrodes can best be made when the electrodes are separated by 60°. PMID:5424376

  15. Collisionless current generation in the center of the tokamak plasma by an isotropic source of {alpha}-particles

    SciTech Connect

    Ilgisonis, V. I.; Sorokina, E. A.; Yurchenko, E. I.

    2010-01-15

    The density of the noninductive current generated due to collisionless motion of {alpha}-particles in the tokamak magnetic field is calculated. The analysis is based on fully three-dimensional calculations of charged particle trajectories without simplifying assumptions typical for drift and neoclassical approaches. The current is calculated over the entire cross section of the plasma column, including the magnetic axis. It is shown that the current density is not a function of a magnetic surface and is strongly polarized over the poloidal angle. The current density distribution in the tokamak poloidal cross section is obtained, and the current density as a function of the safety factor, the tokamak aspect ratio, and the ratio of the particle Larmor radius on the axis to the tokamak minor radius is determined. It is shown that, when the source of {alpha}-particles is spatially nonuniform, the current density in the center of the tokamak is nonzero due to asymmetry of the phase-space boundary between trapped and passing particles. The current density scaling in the tokamak center differs from the known approximations for the bootstrap current and is sensitive to the spatial distribution of {alpha}-particles.

  16. Advanced CMOS Radiation Effects Testing Analysis

    NASA Technical Reports Server (NTRS)

    Pellish, Jonathan Allen; Marshall, Paul W.; Rodbell, Kenneth P.; Gordon, Michael S.; LaBel, Kenneth A.; Schwank, James R.; Dodds, Nathaniel A.; Castaneda, Carlos M.; Berg, Melanie D.; Kim, Hak S.; Phan, Anthony M.; Seidleck, Christina M.

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  17. Advanced CMOS Radiation Effects Testing and Analysis

    NASA Technical Reports Server (NTRS)

    Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.; Phan, A. M.; Seidleck, C. M.

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  18. CMOS Camera Array With Onboard Memory

    NASA Technical Reports Server (NTRS)

    Gat, Nahum

    2009-01-01

    A compact CMOS (complementary metal oxide semiconductor) camera system has been developed with high resolution (1.3 Megapixels), a USB (universal serial bus) 2.0 interface, and an onboard memory. Exposure times, and other operating parameters, are sent from a control PC via the USB port. Data from the camera can be received via the USB port and the interface allows for simple control and data capture through a laptop computer.

  19. Radiation effects on scientific CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Yuanfu, Zhao; Liyan, Liu; Xiaohui, Liu; Xiaofeng, Jin; Xiang, Li

    2015-11-01

    A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic before and after the experiments have been comprehensively analyzed. The performance of the CMOS image sensor with the radiation hardened design technique realized total-dose resilience up to 300 krad(Si) and resilience to single-event latch up for LET up to 110 MeV·cm2/mg.

  20. CMOS-array design-automation techniques

    NASA Technical Reports Server (NTRS)

    Feller, A.; Lombardt, T.

    1979-01-01

    Thirty four page report discusses design of 4,096-bit complementary metal oxide semiconductor (CMOS) read-only memory (ROM). CMOSROM is either mask or laser programable. Report is divided into six sections; section one describes background of ROM chips; section two presents design goals for chip; section three discusses chip implementation and chip statistics; conclusions and recommendations are given in sections four thru six.

  1. High ion charge states in a high-current, short-pulse, vacuum ARC ion sources

    SciTech Connect

    Anders, A.; Brown, I.; MacGill, R.; Dickinson, M.

    1996-08-01

    Ions of the cathode material are formed at vacuum arc cathode spots and extracted by a grid system. The ion charge states (typically 1-4) depend on the cathode material and only little on the discharge current as long as the current is low. Here the authors report on experiments with short pulses (several {mu}s) and high currents (several kA); this regime of operation is thus approaching a more vacuum spark-like regime. Mean ion charge states of up to 6.2 for tungsten and 3.7 for titanium have been measured, with the corresponding maximum charge states of up to 8+ and 6+, respectively. The results are discussed in terms of Saha calculations and freezing of the charge state distribution.

  2. Microbial pigments as natural color sources: current trends and future perspectives.

    PubMed

    Tuli, Hardeep S; Chaudhary, Prachi; Beniwal, Vikas; Sharma, Anil K

    2015-08-01

    Synthetic colors have been widely used in various industries including food, textile, cosmetic and pharmaceuticals. However toxicity problems caused by synthetic pigments have triggered intense research in natural colors and dyes. Among the natural Sources, pigment producing microorganisms hold a promising potential to meet present day challenges. Furthermore natural colors not only improve the marketability of the product but also add extra features like anti oxidant, anti cancer properties etc. In this review, we present various sources of microbial pigments and to explore their biological and clinical properties like antimicrobial, antioxidant, anticancer and anti inflammatory. The study also emphasizes upon key parameters to improve the bioactivity and production of microbial pigments for their commercial use in pharmacological and medical fields. PMID:26243889

  3. Microbial pigments as natural color sources: current trends and future perspectives.

    PubMed

    Tuli, Hardeep S; Chaudhary, Prachi; Beniwal, Vikas; Sharma, Anil K

    2015-08-01

    Synthetic colors have been widely used in various industries including food, textile, cosmetic and pharmaceuticals. However toxicity problems caused by synthetic pigments have triggered intense research in natural colors and dyes. Among the natural Sources, pigment producing microorganisms hold a promising potential to meet present day challenges. Furthermore natural colors not only improve the marketability of the product but also add extra features like anti oxidant, anti cancer properties etc. In this review, we present various sources of microbial pigments and to explore their biological and clinical properties like antimicrobial, antioxidant, anticancer and anti inflammatory. The study also emphasizes upon key parameters to improve the bioactivity and production of microbial pigments for their commercial use in pharmacological and medical fields.

  4. Development of microwave ion source and low energy beam transport system for high current cyclotron

    NASA Astrophysics Data System (ADS)

    Pandit, V. S.; Sing Babu, P.; Goswami, A.; Srivastava, S.; Misra, A.; Chatterjee, Mou; Nabhiraj, P. Y.; Yadav, R. C.; Bhattacharya, S.; Roy, S.; Nandi, C.; Pal, G.; Thakur, S. K.

    2013-12-01

    A 2.45 GHz microwave ion source and a low energy beam transport system have been developed to study the high intensity proton beam injection into a 10 MeV, 5 mA compact cyclotron. We have extracted proton beam more than 10 mA at 80 kV as measured by the DCCT after the extraction and a well collimated beam of 7 mA (through 1 cm × 1 cm slit) at the faraday cup 1.5 m away from the source. The transport of protons from the ion source in the presence of H2+, H3+ species has been studied using PIC simulations through our transport line which consists of two solenoids. We have also installed a small dipole magnet with similar field as that of the cyclotron along with vacuum chamber, spiral inflector and few diagnostic elements at the end of the beam line. In the preliminary testing of inflection, we achieved 1 mA beam on the faraday cup at the exit of inflector with ∼60% transmission efficiency.

  5. Three-dimensional ventricular activation imaging by means of equivalent current source modeling and estimation.

    PubMed

    Liu, Z; Liu, C; He, B

    2006-01-01

    This paper presents a novel electrocardiographic inverse approach for imaging the 3-D ventricular activation sequence based on the modeling and estimation of the equivalent current density throughout the entire myocardial volume. The spatio-temporal coherence of the ventricular excitation process is utilized to derive the activation time from the estimated time course of the equivalent current density. At each time instant during the period of ventricular activation, the distributed equivalent current density is noninvasively estimated from body surface potential maps (BSPM) using a weighted minimum norm approach with a spatio-temporal regularization strategy based on the singular value decomposition of the BSPMs. The activation time at any given location within the ventricular myocardium is determined as the time point with the maximum local current density estimate. Computer simulation has been performed to evaluate the capability of this approach to image the 3-D ventricular activation sequence initiated from a single pacing site in a physiologically realistic cellular automaton heart model. The simulation results demonstrate that the simulated "true" activation sequence can be accurately reconstructed with an average correlation coefficient of 0.90, relative error of 0.19, and the origin of ventricular excitation can be localized with an average localization error of 5.5 mm for 12 different pacing sites distributed throughout the ventricles.

  6. DE 1 observations of theta aurora plasma source regions and Birkeland current charge carriers

    SciTech Connect

    Menietti, J.D.; Burch, J.L. )

    1987-07-01

    The authors have performed detailed analyses of the DE 1 high-altitude plasma instrument (HAPI) electron and ion data for four passes during which theta auroras were observed. The data indicate that the theta auroras occur on what appear to be closed field lines with particle signatures and plasma parameters that are quite similar to those of the magnetospheric boundary plasma sheet. The field-aligned currents computed from particle fluxes in the energy range 18 eV < E < 13 keV above the theta auroras are observed to be generally downward on the dawnside of the arcs with a narrower region of larger (higher density) upward currents on the duskside of the arcs. These currents are carried predominantly by field-aligned beams of accelerated cold electrons. Of particular interest in regions of upward field-aligned current are downward electron beams at energies less than the inferred potential drop above the spacecraft. These beams may be due to atmospheric secondaries or to ionospheric electrons that have convected into a region of field-aligned electric field.

  7. A Novel Method of Suppressing the Inrush Current of Transformers Using a Series-Connected Voltage-Source PWM Converter

    NASA Astrophysics Data System (ADS)

    Yamada, Hiroaki; Tanaka, Toshihiko; Funabiki, Shigeyuki

    This paper proposes a novel method of suppressing the inrush current of transformers. A small-rated voltage-source PWM converter is connected in series to the transformers through a matching transformer. As the connected PWM converter performs a resistor for the source current, no inrush phenomena occurs. The required-ratings of the PWM converter, which performs the damping resistor for the inrush phenomena, is one-four-hundredth as compared to that of the main transformers in single-phase circuits. In three-phase circuits, it is one-nine-hundredth. The basic principle of the proposed method is discussed. Digital computer simulation is implemented to confirm the validity and excellent practicability of the proposed method using the PSCAD/EMTDC. A prototype experimental-model is constructed and tested. The experimental results demonstrate that the proposed method can perfectly suppress the inrush phenomena.

  8. Tests on the extracted current density of negative hydrogen ions from a single element of the matrix source

    SciTech Connect

    Lishev, St.; Yordanov, D. Shivarova, A.

    2015-04-08

    Concepts for the extraction of volume-produced negative hydrogen ions from a rf matrix source (a matrix of small-radius discharges with a planar-coil inductive driving) are presented and discussed based on experimental results for the current densities of the extracted ions and the co-extracted electrons. The experiment has been carried out in a single discharge of the source: a rf discharge with a radius of 2.25 cm inductively driven by a 3.5-turn planar coil. The length of the discharge tube, the area of the reference electrode inserted in the discharge volume, the discharge modes, the magnetic filter and its position along the discharge length, the position of the permanent magnets for the separation of the co-extracted electrons from the extracted ions in the extraction device and the bias applied to its first electrode are considered as factors influencing the extracted currents of negative ions.

  9. Historical deposition behaviors of PAHs in the Yangtze River Estuary: role of the sources and water currents.

    PubMed

    Wang, Dongxin; Feng, Chenghong; Huang, Luxia; Niu, Junfeng; Shen, Zhenyao

    2013-02-01

    Historical profiles and sources of PAHs at two typical sediment cores (i.e., the shipping route site and the shoal site) were fully compared to probe the controlling factors, specifically the water currents, for the PAHs deposition processes in the Yangtze River Estuary. Compared with ocean water currents, river runoff affected by the water impoundment of the Three Gorges Dam greatly affected the PAHs levels and percent contribution of PAHs sources in the two cores. River runoff hindered the PAHs deposition in shoal site, while a contrary phenomenon was observed for the shipping route site. Though the PAHs in the estuary were mainly from river catchment, only low ring PAHs in the shipping route site were mainly from the upper reach of the river. Coarse sediments with higher organic carbon content also accounted for the higher deposition levels of PAHs in the shipping route site. PMID:23200571

  10. An Approach for Self-Timed Synchronous CMOS Circuit Design

    NASA Technical Reports Server (NTRS)

    Walker, Alvernon; Lala, Parag K.

    2001-01-01

    In this letter we present a timing and control strategy that can be used to realize synchronous systems with a level of performance that approaches that of asynchronous circuits or systems. This approach is based upon a single-phase synchronous circuit/system architecture with a variable period clock. The handshaking signals required for asynchronous self-timed circuits are not needed. Dynamic power supply current monitoring is used to generate the timing information, that is comparable to the completion signal found in self-timed circuits; this timing information is used to modi@ the circuit clock period. This letter is concluded with an example of the proposed approach applied to a static CMOS ripple-carry adder.

  11. Rapid Bacterial Detection via an All-Electronic CMOS Biosensor

    PubMed Central

    Nikkhoo, Nasim; Cumby, Nichole; Gulak, P. Glenn; Maxwell, Karen L.

    2016-01-01

    The timely and accurate diagnosis of infectious diseases is one of the greatest challenges currently facing modern medicine. The development of innovative techniques for the rapid and accurate identification of bacterial pathogens in point-of-care facilities using low-cost, portable instruments is essential. We have developed a novel all-electronic biosensor that is able to identify bacteria in less than ten minutes. This technology exploits bacteriocins, protein toxins naturally produced by bacteria, as the selective biological detection element. The bacteriocins are integrated with an array of potassium-selective sensors in Complementary Metal Oxide Semiconductor technology to provide an inexpensive bacterial biosensor. An electronic platform connects the CMOS sensor to a computer for processing and real-time visualization. We have used this technology to successfully identify both Gram-positive and Gram-negative bacteria commonly found in human infections. PMID:27618185

  12. Rapid Bacterial Detection via an All-Electronic CMOS Biosensor.

    PubMed

    Nikkhoo, Nasim; Cumby, Nichole; Gulak, P Glenn; Maxwell, Karen L

    2016-01-01

    The timely and accurate diagnosis of infectious diseases is one of the greatest challenges currently facing modern medicine. The development of innovative techniques for the rapid and accurate identification of bacterial pathogens in point-of-care facilities using low-cost, portable instruments is essential. We have developed a novel all-electronic biosensor that is able to identify bacteria in less than ten minutes. This technology exploits bacteriocins, protein toxins naturally produced by bacteria, as the selective biological detection element. The bacteriocins are integrated with an array of potassium-selective sensors in Complementary Metal Oxide Semiconductor technology to provide an inexpensive bacterial biosensor. An electronic platform connects the CMOS sensor to a computer for processing and real-time visualization. We have used this technology to successfully identify both Gram-positive and Gram-negative bacteria commonly found in human infections. PMID:27618185

  13. Effect of high energy electrons on H⁻ production and destruction in a high current DC negative ion source for cyclotron.

    PubMed

    Onai, M; Etoh, H; Aoki, Y; Shibata, T; Mattei, S; Fujita, S; Hatayama, A; Lettry, J

    2016-02-01

    Recently, a filament driven multi-cusp negative ion source has been developed for proton cyclotrons in medical applications. In this study, numerical modeling of the filament arc-discharge source plasma has been done with kinetic modeling of electrons in the ion source plasmas by the multi-cusp arc-discharge code and zero dimensional rate equations for hydrogen molecules and negative ions. In this paper, main focus is placed on the effects of the arc-discharge power on the electron energy distribution function and the resultant H(-) production. The modelling results reasonably explains the dependence of the H(-) extraction current on the arc-discharge power in the experiments. PMID:26932009

  14. Design and characterization of CMOS multichannel front-end electronics for silicon photomultipliers

    NASA Astrophysics Data System (ADS)

    Argentieri, A.; Corsi, F.; Foresta, M.; Marzocca, C.; Del Guerra, A.

    2011-10-01

    CMOS multichannel front-end electronics suitable for Silicon Photomultiplier detectors has been developed, mainly intended for medical imaging applications. The architecture of the analog channel, DC coupled to the detector, is based on a full current-mode approach, which allows to achieve a wide input dynamic range of about 70 pC while retaining very fast self-triggering capabilities. An 8-channel ASIC with on-chip ADC and a 32-channel prototype have been designed and manufactured, both featuring serial and sparse readout capabilities and a fast-OR circuit, able to generate a high-speed trigger signal from the discriminator outputs of the analog channels. Measurements obtained by coupling the 8-channel prototypes to an injection capacitance have been carried out for characterization purposes. The circuit has been also used to read-out SiPMs coupled to different kinds of light sources, such as a blue LED and a small LYSO scintillation crystal excited by gamma photons with different energies. The results obtained from these tests are presented and discussed, confirming the effectiveness of the proposed front-end architecture.

  15. High mobility CMOS technologies using III-V/Ge channels on Si platform

    NASA Astrophysics Data System (ADS)

    Takagi, S.; Kim, S.-H.; Yokoyama, M.; Zhang, R.; Taoka, N.; Urabe, Y.; Yasuda, T.; Yamada, H.; Ichikawa, O.; Fukuhara, N.; Hata, M.; Takenaka, M.

    2013-10-01

    MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been paid to Ge and III-V channels. In this paper, possible solutions for realizing III-V/Ge MOSFETs on the Si platform are presented. The high quality III-V channel formation on Si substrates can be realized through direct wafer bonding. The gate stack formation is constructed on a basis of atomic layer deposition (ALD) Al2O3 gate insulators for both InGaAs and Ge MOSFETs. As the source/drain (S/D) formation, Ni-based metal S/D is implemented for both InGaAs and Ge MOSFETs. By combining these technologies, we demonstrate successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on a same wafer and their superior device performance.

  16. An Autonomous Wireless Sensor Node With Asynchronous ECG Monitoring in 0.18 μ m CMOS.

    PubMed

    Mansano, Andre L; Li, Yongjia; Bagga, Sumit; Serdijn, Wouter A

    2016-06-01

    The design of a 13.56 MHz/402 MHz autonomous wireless sensor node with asynchronous ECG monitoring for near field communication is presented. The sensor node consists of an RF energy harvester (RFEH), a power management unit, an ECG readout, a data encoder and an RF backscattering transmitter. The energy harvester supplies the system with 1.25 V and offers a power conversion efficiency of 19% from a -13 dBm RF source at 13.56 MHz. The power management unit regulates the output voltage of the RFEH to supply the ECG readout with VECG = 0.95 V and the data encoder with VDE = 0.65 V . The ECG readout comprises an analog front-end (low noise amplifier and programmable voltage to current converter) and an asynchronous level crossing ADC with 8 bits resolution. The ADC output is encoded by a pulse generator that drives a backscattering transmitter at 402 MHz. The total power consumption of the sensor node circuitry is 9.7 μ W for a data rate of 90 kb/s and a heart rate of 70 bpm. The chip has been designed in a 0.18 μm CMOS process and shows superior RF input power sensitivity and lower power consumption when compared to previous works. PMID:26812734

  17. Generator localization by current source density (CSD): implications of volume conduction and field closure at intracranial and scalp resolutions.

    PubMed

    Tenke, Craig E; Kayser, Jürgen

    2012-12-01

    The topographic ambiguity and reference-dependency that has plagued EEG/ERP research throughout its history are largely attributable to volume conduction, which may be concisely described by a vector form of Ohm's Law. This biophysical relationship is common to popular algorithms that infer neuronal generators via inverse solutions. It may be further simplified as Poisson's source equation, which identifies underlying current generators from estimates of the second spatial derivative of the field potential (Laplacian transformation). Intracranial current source density (CSD) studies have dissected the "cortical dipole" into intracortical sources and sinks, corresponding to physiologically-meaningful patterns of neuronal activity at a sublaminar resolution, much of which is locally cancelled (i.e., closed field). By virtue of the macroscopic scale of the scalp-recorded EEG, a surface Laplacian reflects the radial projections of these underlying currents, representing a unique, unambiguous measure of neuronal activity at scalp. Although the surface Laplacian requires minimal assumptions compared to complex, model-sensitive inverses, the resulting waveform topographies faithfully summarize and simplify essential constraints that must be placed on putative generators of a scalp potential topography, even if they arise from deep or partially-closed fields. CSD methods thereby provide a global empirical and biophysical context for generator localization, spanning scales from intracortical to scalp recordings.

  18. Generator localization by current source density (CSD): implications of volume conduction and field closure at intracranial and scalp resolutions.

    PubMed

    Tenke, Craig E; Kayser, Jürgen

    2012-12-01

    The topographic ambiguity and reference-dependency that has plagued EEG/ERP research throughout its history are largely attributable to volume conduction, which may be concisely described by a vector form of Ohm's Law. This biophysical relationship is common to popular algorithms that infer neuronal generators via inverse solutions. It may be further simplified as Poisson's source equation, which identifies underlying current generators from estimates of the second spatial derivative of the field potential (Laplacian transformation). Intracranial current source density (CSD) studies have dissected the "cortical dipole" into intracortical sources and sinks, corresponding to physiologically-meaningful patterns of neuronal activity at a sublaminar resolution, much of which is locally cancelled (i.e., closed field). By virtue of the macroscopic scale of the scalp-recorded EEG, a surface Laplacian reflects the radial projections of these underlying currents, representing a unique, unambiguous measure of neuronal activity at scalp. Although the surface Laplacian requires minimal assumptions compared to complex, model-sensitive inverses, the resulting waveform topographies faithfully summarize and simplify essential constraints that must be placed on putative generators of a scalp potential topography, even if they arise from deep or partially-closed fields. CSD methods thereby provide a global empirical and biophysical context for generator localization, spanning scales from intracortical to scalp recordings. PMID:22796039

  19. A CMOS Neural Interface for a Multichannel Vestibular Prosthesis

    PubMed Central

    Hageman, Kristin N.; Kalayjian, Zaven K.; Tejada, Francisco; Chiang, Bryce; Rahman, Mehdi A.; Fridman, Gene Y.; Dai, Chenkai; Pouliquen, Philippe O.; Georgiou, Julio; Della Santina, Charles C.; Andreou, Andreas G.

    2015-01-01

    We present a high-voltage CMOS neural-interface chip for a multichannel vestibular prosthesis (MVP) that measures head motion and modulates vestibular nerve activity to restore vision- and posture-stabilizing reflexes. This application specific integrated circuit neural interface (ASIC-NI) chip was designed to work with a commercially available microcontroller, which controls the ASIC-NI via a fast parallel interface to deliver biphasic stimulation pulses with 9-bit programmable current amplitude via 16 stimulation channels. The chip was fabricated in the ONSemi C5 0.5 micron, high-voltage CMOS process and can accommodate compliance voltages up to 12 V, stimulating vestibular nerve branches using biphasic current pulses up to 1.45 ± 0.06 mA with durations as short as 10 µs/phase. The ASIC-NI includes a dedicated digital-to-analog converter for each channel, enabling it to perform complex multipolar stimulation. The ASIC-NI replaces discrete components that cover nearly half of the 2nd generation MVP (MVP2) printed circuit board, reducing the MVP system size by 48% and power consumption by 17%. Physiological tests of the ASIC-based MVP system (MVP2A) in a rhesus monkey produced reflexive eye movement responses to prosthetic stimulation similar to those observed when using the MVP2. Sinusoidal modulation of stimulus pulse rate from 68–130 pulses per second at frequencies from 0.1 to 5 Hz elicited appropriately-directed slow phase eye velocities ranging in amplitude from 1.9–16.7°/s for the MVP2 and 2.0–14.2°/s for the MVP2A. The eye velocities evoked by MVP2 and MVP2A showed no significant difference (t-test, p = 0.034), suggesting that the MVP2A achieves performance at least as good as the larger MVP2. PMID:25974945

  20. High-Q CMOS-integrated photonic crystal microcavity devices

    PubMed Central

    Mehta, Karan K.; Orcutt, Jason S.; Tehar-Zahav, Ofer; Sternberg, Zvi; Bafrali, Reha; Meade, Roy; Ram, Rajeev J.

    2014-01-01

    Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems. PMID:24518161

  1. Spatially resolved charge-state and current-density distributions at the extraction of an electron cyclotron resonance ion source

    SciTech Connect

    Panitzsch, Lauri; Peleikis, Thies; Stalder, Michael; Wimmer-Schweingruber, Robert F.

    2011-09-15

    In this paper we present our measurements of charge-state and current-density distributions performed in very close vicinity (15 mm) of the extraction of our hexapole geometry electron cyclotron resonance ion source. We achieved a relatively high spatial resolution reducing the aperture of our 3D-movable extraction (puller) electrode to a diameter of only 0.5 mm. Thus, we are able to limit the source of the extracted ion beam to a very small region of the plasma electrode's hole (O = 4 mm) and therefore to a very small region of the neutral plasma sheath. The information about the charge-state distribution and the current density in the plane of the plasma electrode at each particular position is conserved in the ion beam. We determined the total current density distribution at a fixed coaxial distance of only 15 mm to the plasma electrode by remotely moving the small-aperture puller electrode which contained a dedicated Faraday cup (FC) across the aperture of the plasma electrode. In a second measurement we removed the FC and recorded m/q-spectra for the different positions using a sector magnet. From our results we can deduce that different ion charge-states can be grouped into bloated triangles of different sizes and same orientation at the extraction with the current density peaking at centre. This confirms observations from other groups based on simulations and emittance measurements. We present our measurements in detail and discuss possible systematic errors.

  2. Association between equivalent current dipole source localization and focal cortical dysplasia in epilepsy patients.

    PubMed

    Blenkmann, Alejandro; Seifer, Gustavo; Princich, Juan Pablo; Consalvo, Damian; Kochen, Silvia; Muravchik, Carlos

    2012-02-01

    We analysed the association between focal cortical dysplasia (FCD) visible in MRI and the location of equivalent current dipole (ECD) of single interictal scalp EEG spikes (IIS) in 11 epilepsy patients. We calculated several indicators of distance of ECDs to the FCD border. The results confirm some previous studies suggesting that the epileptogenic zone associated to the location of ECDs extends beyond the FCD visible in MRI. The analysis suggests the ECDs to be in a shell parallel to part of the FCD surface.

  3. A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

    NASA Astrophysics Data System (ADS)

    Changliang, Yu; Luhong, Mao; Xindong, Xiao; Sheng, Xie; Shilin, Zhang

    2009-10-01

    This paper presents a realization of a silicon-based standard CMOS, fully differential optoelectronic integrated receiver based on a metal-semiconductor-metal light detector (MSM photodetector). In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photogenerated currents. The optoelectronic integrated receiver was designed and implemented in a chartered 0.35 μm, 3.3 V standard CMOS process. For 850 nm wavelength, it achieves a 1 GHz 3 dB bandwidth due to the MSM photodetector's low capacitance and high intrinsic bandwidth. In addition, it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to -3 dB frequency.

  4. Break-before-Make CMOS Inverter for Power-Efficient Delay Implementation

    PubMed Central

    Raič, Dušan

    2014-01-01

    A modified static CMOS inverter with two inputs and two outputs is proposed to reduce short-circuit current in order to increment delay and reduce power overhead where slow operation is required. The circuit is based on bidirectional delay element connected in series with the PMOS and NMOS switching transistors. It provides differences in the dynamic response so that the direct-path current in the next stage is reduced. The switching transistors are never ON at the same time. Characteristics of various delay element implementations are presented and verified by circuit simulations. Global optimization procedure is used to obtain the most power-efficient transistor sizing. The performance of the modified CMOS inverter chain is compared to standard implementation for various delays. The energy (charge) per delay is reduced up to 40%. The use of the proposed delay element is demonstrated by implementing a low-power delay line and a leading-edge detector cell. PMID:25538951

  5. Ambient and cryogenic temperature testing of a 32-channel CMOS multiplexer

    NASA Technical Reports Server (NTRS)

    Lee, J. H.

    1983-01-01

    A 32 channel CMOS multiplexer was tested at room temperature and at liquid helium temperature (4.9 K). Voltage gain of the FET input stage, leakage current, electrical crosstalk, and noise as a function of clock frequency were measured. The voltage gain measured at 4.9 K was slightly higher than that measured at 300 K and was independent of clock frequency at both operating temperatures. The off channel leakage current was 0.23 pA/channel at 4.9 K. Electrical crosstalk between adjacent channels (one on, one off) was quite low. The spot noise at 10 Hz, of the CMOS multiplexer operating in the static mode did not vary significantly with operating temperature. In the dynamic mode (3.2 kHz clock) at room temperature, the spot noise at 10 Hz was substantially higher than that measured in the static mode.

  6. Current regulatory and licensing status for byproduct sources, facilities and applications

    NASA Astrophysics Data System (ADS)

    Tingey, G. L.; Jensen, G. A.; Hazelton, R. F.

    1985-02-01

    Public use of nuclear byproducts, especially radioactive isotopes, will require approval by various regulatory agencies. Use of cesium-137 as an irradiation source for sterilizing medical products will require US Nuclear Regulatory Commission (NRC) approval. Two applications have been filed with NRC, and approval is expected soon. Widespread use of irradiation for food products depends on a favorable ruling by the Food and Drug Administration (FDA). A ruling is pending that would permit irradiation of fruits and vegetables up to 100 krad. NRC also controls the use of isotopes in remote power generators, but little regulatory action has been required in recent years. Recent development of radioluminescent (RL) lighting for runway lights has led to interest by commercial manufacturers. At the present time, a license has been issued to at least one manufacturer for sale of tritium-powered runway lights.

  7. Current regulatory and licensing status for byproduct sources, facilities and applications

    SciTech Connect

    Tingey, G.L.; Jensen, G.A.; Hazelton, R.F.

    1985-02-01

    Public use of nuclear byproducts, especially radioactive isotopes, will require approval by various regulatory agencies. Use of cesium-137 as an irradiation source for sterilizing medical products will require US Nuclear Regulatory Commission (NRC) approval. Two applications have been filed with NRC, and approval is expected soon. Widespread use of irradiation for food products depends on a favorable ruling by the Food and Drug Administration (FDA). A ruling is pending that would permit irradiation of fruits and vegetables up to 100 krad. NRC also controls the use of isotopes in remote power generators, but little regulatory action has been required in recent years. Recent development of radioluminescent (RL) lighting for runway lights has led to interest by commercial manufacturers. At the present time, a license has been issued to at least one manufacturer for sale of tritium-powered runway lights. 28 refs., 1 fig.

  8. Single element of the matrix source of negative hydrogen ions: Measurements of the extracted currents combined with diagnostics.

    PubMed

    Yordanov, D; Lishev, St; Shivarova, A

    2016-02-01

    Combining measurements of the extracted currents with probe and laser-photodetachment diagnostics, the study is an extension of recent tests of factors and gas-discharge conditions stimulating the extraction of volume produced negative ions. The experiment is in a single element of a rf source with the design of a matrix of small-radius inductively driven discharges. The results are for the electron and negative-ion densities, for the plasma potential and for the electronegativity in the vicinity of the plasma electrode as well as for the currents of the extracted negative ions and electrons. The plasma-electrode bias and the rf power have been varied. Necessity of a high bias to the plasma electrode and stable linear increase of the extracted currents with the rf power are the main conclusions.

  9. Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors

    NASA Astrophysics Data System (ADS)

    Nagata, Hirohisa; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi

    2009-12-01

    We measured the static characteristics and noise spectra of FD-SOI-CMOS at liquid helium temperature where many bulk-CMOS transistors suffer from anomalous behaviors on the current-voltage curves such as kink phenomena. The test results showed that the static characteristics depend on the layouts of the FD-SOI-CMOS transistor. While a body floating FD-SOI-CMOS transistor showed strong anomalous effects on the I-V curves, body-tied and ST ones showed much better static characteristics than the body floating one. Using the characteristics derived from the FET measurements, we show that a low power and high gain preamplifier suitable for far-infrared detectors can be designed.

  10. The current source of human Alu retroposons is a conserved gene shared with Old World monkey

    SciTech Connect

    Britten, R.J.; Stout, D.B.; Davidson, E.H. )

    1989-05-01

    A significant fraction of human Alu repeated sequences are members of the precise, recently inserted class. A cloned member of this class has been used as a probe for interspecies hybridization and thermal stability determination. The probe was reassociated with human, mandrill, and spider monkey DNA under conditions such that only almost perfectly matching duplexes could form. Equally precise hybrids were formed with human and mandrill DNA (Old World monkey) but not with spider monkey DNA (New World). These measurements as well as reassociation kinetics show the presence in mandrill DNA of many precise class Alu sequences that are very similar or identical in quantity and sequence to those in human DNA. Human and mandrill are moderately distant species with a single-copy DNA divergence of about 6%. Nevertheless, their recently inserted Alu sequences arise by retroposition of transcripts of source genes with nearly identical sequences. Apparently a gene present in our common ancestor at the time of branching was inherited and highly conserved in sequence in both the lineage of Old World monkeys and the lineage of apes and man.

  11. A Real-time Auto-detection Method for Random Telegraph Signal (RTS) Noise Detection in CMOS Active pixel sensors

    NASA Astrophysics Data System (ADS)

    Zheng, R.; Zhao, R.; Ma, Y.; Li, B.; Wei, X.; Wang, J.; Gao, W.; Wei, T.; Gao, D.; Hu, Y.

    2015-07-01

    CMOS Active pixel sensors (CMOS APS) are attractive for use in the innermost layers of charged particle trackers, due to their good tradeoffs among the key performances. However, CMOS APS can be greatly influenced by random telegraph signal (RTS) noise, which can cause particle tracking or energy calculation failures. In-depth research of pixels' RTS behavior stimulates the interest of the methods for RTS noise detection, reconstruction and parameters extraction. In this paper, a real-time auto-detection method is proposed, using real-time Gaussian noise standard deviation as the detection threshold. Experimental results show that, compared with current methods using signal standard deviation as the thresholds, the proposed method is more sensitive in multi-level RTS detection and more effective in the case of RTS noise degradation.

  12. Efficient calculation of current densities in the human body induced by arbitrarily shaped, low-frequency magnetic field sources

    NASA Astrophysics Data System (ADS)

    Barchanski, Andreas; Clemens, Markus; De Gersem, Herbert; Weiland, Thomas

    2006-05-01

    In this paper, we extend the scalar-potential finite-difference (SPFD) approach in order to consider arbitrarily shaped time-harmonic field sources. The SPFD approach is commonly used to compute the currents induced by an externally applied magnetic field in regions with weak, heterogeneous conductivities such as, e.g., the human body. We present the extended scalar-potential finite-difference (Ex-SPFD) approach as a two step algorithm. In the first step, the excitation is computed by solving the magnetoquasistatic curl-curl equation on a coarse grid that is well adapted for the field sources. In the second step, the magnetic vector potential is prolongated onto a finer grid and a divergence correction inside the conductor is applied. Using the Maxwell-grid-equations (MGEs) of the finite integration technique, a geometric discretization scheme for Maxwell's equations, this new approach has been implemented in a parallel environment in order to account for the memory-demanding high-resolution anatomy models used for the calculation of induced currents inside the human body. We demonstrate the validity and the improved numerical performance of the new approach for a test case. Finally, an application example of a human exposed to a realistic electromagnetic field source is presented.

  13. Dietary sources, current intakes, and nutritional role of omega-3 docosapentaenoic acid

    PubMed Central

    Byelashov, Oleksandr A; Sinclair, Andrew J; Kaur, Gunveen

    2015-01-01

    Fish oils and long-chain omega-3 fatty acids are well recognized for their critical role in human diets. Docosapentaenoic acid (DPA, 22 : 5n-3) has always been a part of healthy nutrition, since infants obtain almost as much DPA as DHA from human milk. Fish oil supplements and ingredients, oily fish, and grass-fed beef can serve as the primary DPA sources for the general population. Although the DPA levels in fish oils are substantially lower than those of EPA and DHA, concentrated DPA products are now becoming commercially available, and DPA-based drugs are under development. Epidemiological studies show that similar to eicosapentaenoic (EPA, 20 : 5n-3) and docosahexaenoic (DHA, 22 : 6n-3) acids, DPA is linked to various improvements in human health, perhaps owing to its structural similarity to the other two molecules. Studies in mammals, platelets, and cell cultures have demonstrated that DPA reduces platelet aggregation, and improves lipid metabolism, endothelial cell migration, and resolution of chronic inflammation. Further, other in vivo and in vitro studies have shown that DPA can improve neural health. A human supplementation trial with 99.8% pure DPA suggested that it serves as a storage depot for EPA and DHA in the human body. Future randomized controlled human trials with purified DPA will help clarify its effects on human health. They may confirm the available evidence pointing to its nutritional and biological functions, unique or overlapping with those of EPA and DHA. PMID:26097290

  14. High Current Density, Long Life Cathodes for High Power RF Sources

    SciTech Connect

    Ives, Robert Lawrence; Collins, George; Falce, Lou; Schwartzkopf, Steve; Busbaher, Daniel

    2014-01-22

    This program was tasked with improving the quality and expanding applications for Controlled Porosity Reservoir (CPR) cathodes. Calabazas Creek Research, Inc. (CCR) initially developed CPR cathodes on a DOE-funded SBIR program to improve cathodes for magnetron injection guns. Subsequent funding was received from the Defense Advanced Research Projects Agency. The program developed design requirements for implementation of the technology into high current density cathodes for high frequency applications. During Phase I of this program, CCR was awarded the prestigious 2011 R&D100 award for this technology. Subsequently, the technology was presented at numerous technical conferences. A patent was issued for the technology in 2009. These cathodes are now marketed by Semicon Associates, Inc. in Lexington, KY. They are the world’s largest producer of cathodes for vacuum electron devices. During this program, CCR teamed with Semicon Associates, Inc. and Ron Witherspoon, Inc. to improve the fabrication processes and expand applications for the cathodes. Specific fabrications issues included the quality of the wire winding that provides the basic structure and the sintering to bond the wires into a robust, cohesive structure. The program also developed improved techniques for integrating the resulting material into cathodes for electron guns.

  15. High responsivity CMOS imager pixel implemented in SOI technology

    NASA Technical Reports Server (NTRS)

    Zheng, X.; Wrigley, C.; Yang, G.; Pain, B.

    2000-01-01

    Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

  16. Development of functional thalamocortical synapses studied with current source-density analysis in whole forebrain slices in the rat.

    PubMed

    Molnár, Zoltán; Kurotani, Tohru; Higashi, Shuji; Yamamoto, Nobuhiko; Toyama, Keisuke

    2003-05-30

    We analysed the laminar distribution of transmembrane currents from embryonic (E) day 17 until adulthood after selective thalamic stimulation in slices of rat forebrain to study the development of functional thalamocortical and cortico-cortical connections. At E18 to birth a short-latency current sink was observed in the subplate and layer 6, which was decreased, but not fully abolished in a cobalt containing solution or after the application of glutamate receptor blockers (APV and DNQX). This indicated that embryonic thalamic axons were capable of conducting action potentials to the cortex and some of them had already formed functional synapses there. Between birth and P3, when thalamic axons were completing their upward growth, a sink gradually appeared more superficially in the dense cortical plate and synchronously, a current source aroused in layer 5. Both sinks and sources completely disappeared after blocking synaptic transmission. The adult-like distribution of CSDs became apparent after P7. The component in layer 6 cannot be blocked completely after this age suggesting antidromic activation. This study demonstrated that cells of the lowest layers of the cortex received functional thalamic input before birth and that thalamocortical axons formed synapses with more superficial cells as they grew into the cortical plate.

  17. Vertical Isolation for Photodiodes in CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata

    2008-01-01

    In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

  18. Novelty P3 reductions in depression: Characterization using principal components analysis (PCA) of current source density (CSD) waveforms

    PubMed Central

    TENKE, CRAIG E.; KAYSER, JÜRGEN; STEWART, JONATHAN W.; BRUDER, GERARD E.

    2012-01-01

    We previously reported a novelty P3 reduction in depressed patients compared to healthy controls (n = 20 per group) in a novelty oddball task using a 31-channel montage. In an independent replication and extension using a 67-channel montage (n = 49 per group), reference-free current source density (CSD) waveforms were simplified and quantified by a temporal, covariance-based principal components analysis (PCA) (unrestricted Varimax rotation), yielding factor solutions consistent with other oddball tasks. A factor with a loadings peak at 343 ms summarized the target P3b source as well as a secondary midline frontocentral source for novels and targets. An earlier novelty vertex source (NVS) at 241 ms was present for novels, but not targets, and was reduced in patients. Compatible CSD-PCA findings were also confirmed for the original low-density sample. Results are consistent with a reduced novelty response in clinical depression, involving the early phase of the frontocentral novelty P3. PMID:19761526

  19. The development of a realistic source term for sodium-cooled fast reactors : assessment of current status and future needs.

    SciTech Connect

    LaChance, Jeffrey L.; Phillips, Jesse; Parma, Edward J., Jr.; Olivier, Tara Jean; Middleton, Bobby D.

    2011-06-01

    Sodium-cooled fast reactors (SFRs) continue to be proposed and designed throughout the United States and the world. Although the number of SFRs actually operating has declined substantially since the 1980s, a significant interest in advancing these types of reactor systems remains. Of the many issues associated with the development and deployment of SFRs, one of high regulatory importance is the source term to be used in the siting of the reactor. A substantial amount of modeling and experimental work has been performed over the past four decades on accident analysis, sodium coolant behavior, and radionuclide release for SFRs. The objective of this report is to aid in determining the gaps and issues related to the development of a realistic, mechanistically derived source term for SFRs. This report will allow the reader to become familiar with the severe accident source term concept and gain a broad understanding of the current status of the models and experimental work. Further, this report will allow insight into future work, in terms of both model development and experimental validation, which is necessary in order to develop a realistic source term for SFRs.

  20. Smart CMOS sensor for wideband laser threat detection

    NASA Astrophysics Data System (ADS)

    Schwarze, Craig R.; Sonkusale, Sameer

    2015-09-01

    The proliferation of lasers has led to their widespread use in applications ranging from short range standoff chemical detection to long range Lidar sensing and target designation operating across the UV to LWIR spectrum. Recent advances in high energy lasers have renewed the development of laser weapons systems. The ability to measure and assess laser source information is important to both identify a potential threat as well as determine safety and nominal hazard zone (NHZ). Laser detection sensors are required that provide high dynamic range, wide spectral coverage, pulsed and continuous wave detection, and large field of view. OPTRA, Inc. and Tufts have developed a custom ROIC smart pixel imaging sensor architecture and wavelength encoding optics for measurement of source wavelength, pulse length, pulse repetition frequency (PRF), irradiance, and angle of arrival. The smart architecture provides dual linear and logarithmic operating modes to provide 8+ orders of signal dynamic range and nanosecond pulse measurement capability that can be hybridized with the appropriate detector array to provide UV through LWIR laser sensing. Recent advances in sputtering techniques provide the capability for post-processing CMOS dies from the foundry and patterning PbS and PbSe photoconductors directly on the chip to create a single monolithic sensor array architecture for measuring sources operating from 0.26 - 5.0 microns, 1 mW/cm2 - 2 kW/cm2.

  1. Intrinsic signal imaging of brain function using a small implantable CMOS imaging device

    NASA Astrophysics Data System (ADS)

    Haruta, Makito; Sunaga, Yoshinori; Yamaguchi, Takahiro; Takehara, Hironari; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2015-04-01

    A brain functional imaging technique over a long period is important to understand brain functions related to animal behavior. We have developed a small implantable CMOS imaging device for measuring brain activity in freely moving animals. This device is composed of a CMOS image sensor chip and LEDs for illumination. In this study, we demonstrated intrinsic signal imaging of blood flow using the device with a green LED light source at a peak wavelength of 535 nm, which corresponds to one of the absorption spectral peaks of blood cells. Brain activity increases regional blood flow. The device light weight of about 0.02 g makes it possible to stably measure brain activity through blood flow over a long period. The device has successfully measured the intrinsic signal related to sensory stimulation on the primary somatosensory cortex.

  2. Design of high speed camera based on CMOS technology

    NASA Astrophysics Data System (ADS)

    Park, Sei-Hun; An, Jun-Sick; Oh, Tae-Seok; Kim, Il-Hwan

    2007-12-01

    The capacity of a high speed camera in taking high speed images has been evaluated using CMOS image sensors. There are 2 types of image sensors, namely, CCD and CMOS sensors. CMOS sensor consumes less power than CCD sensor and can take images more rapidly. High speed camera with built-in CMOS sensor is widely used in vehicle crash tests and airbag controls, golf training aids, and in bullet direction measurement in the military. The High Speed Camera System made in this study has the following components: CMOS image sensor that can take about 500 frames per second at a resolution of 1280*1024; FPGA and DDR2 memory that control the image sensor and save images; Camera Link Module that transmits saved data to PC; and RS-422 communication function that enables control of the camera from a PC.

  3. Organic Field-Effect Transistors for CMOS Devices

    NASA Astrophysics Data System (ADS)

    Melzer, Christian; von Seggern, Heinz

    Organic field-effect transistors (OFETs) are the key elements of future low cost electronics such as radio frequency identification tags. In order to take full advantage of organic electronics, low power consumption is mandatory, requiring the use of a complementary metal oxide semiconductor (CMOS) like technique. To realize CMOS-devices p-type and n-type organic field-effect transistors on one substrate have to be provided. Here, the latest concepts to produce in a straightforward way complementary acting OFETs for CMOS-like elements are illustrated on basis of the inverter. Starting from a simple description of thin-film transistors, the basic design rules for the development of complementary OFETs are given and some realizations of CMOS-like inverters are discussed. A CMOS-like inverter based on two identical field-effect transistors disclosing almost unipolar p-type and n-type behavior is presented.

  4. sLORETA current source density analysis of evoked potentials for spatial updating in a virtual navigation task.

    PubMed

    Nguyen, Hai M; Matsumoto, Jumpei; Tran, Anh H; Ono, Taketoshi; Nishijo, Hisao

    2014-01-01

    Previous studies have reported that multiple brain regions are activated during spatial navigation. However, it is unclear whether these activated brain regions are specifically associated with spatial updating or whether some regions are recruited for parallel cognitive processes. The present study aimed to localize current sources of event related potentials (ERPs) associated with spatial updating specifically. In the control phase of the experiment, electroencephalograms (EEGs) were recorded while subjects sequentially traced 10 blue checkpoints on the streets of a virtual town, which were sequentially connected by a green line, by manipulating a joystick. In the test phase of the experiment, the checkpoints and green line were not indicated. Instead, a tone was presented when the subjects entered the reference points where they were then required to trace the 10 invisible spatial reference points corresponding to the checkpoints. The vertex-positive ERPs with latencies of approximately 340 ms from the moment when the subjects entered the unmarked reference points were significantly larger in the test than in the control phases. Current source density analysis of the ERPs by standardized low-resolution brain electromagnetic tomography (sLORETA) indicated activation of brain regions in the test phase that are associated with place and landmark recognition (entorhinal cortex/hippocampus, parahippocampal and retrosplenial cortices, fusiform, and lingual gyri), detecting self-motion (posterior cingulate and posterior insular cortices), motor planning (superior frontal gyrus, including the medial frontal cortex), and regions that process spatial attention (inferior parietal lobule). The present results provide the first identification of the current sources of ERPs associated with spatial updating, and suggest that multiple systems are active in parallel during spatial updating.

  5. sLORETA current source density analysis of evoked potentials for spatial updating in a virtual navigation task

    PubMed Central

    Nguyen, Hai M.; Matsumoto, Jumpei; Tran, Anh H.; Ono, Taketoshi; Nishijo, Hisao

    2014-01-01

    Previous studies have reported that multiple brain regions are activated during spatial navigation. However, it is unclear whether these activated brain regions are specifically associated with spatial updating or whether some regions are recruited for parallel cognitive processes. The present study aimed to localize current sources of event related potentials (ERPs) associated with spatial updating specifically. In the control phase of the experiment, electroencephalograms (EEGs) were recorded while subjects sequentially traced 10 blue checkpoints on the streets of a virtual town, which were sequentially connected by a green line, by manipulating a joystick. In the test phase of the experiment, the checkpoints and green line were not indicated. Instead, a tone was presented when the subjects entered the reference points where they were then required to trace the 10 invisible spatial reference points corresponding to the checkpoints. The vertex-positive ERPs with latencies of approximately 340 ms from the moment when the subjects entered the unmarked reference points were significantly larger in the test than in the control phases. Current source density analysis of the ERPs by standardized low-resolution brain electromagnetic tomography (sLORETA) indicated activation of brain regions in the test phase that are associated with place and landmark recognition (entorhinal cortex/hippocampus, parahippocampal and retrosplenial cortices, fusiform, and lingual gyri), detecting self-motion (posterior cingulate and posterior insular cortices), motor planning (superior frontal gyrus, including the medial frontal cortex), and regions that process spatial attention (inferior parietal lobule). The present results provide the first identification of the current sources of ERPs associated with spatial updating, and suggest that multiple systems are active in parallel during spatial updating. PMID:24624067

  6. A CMOS high speed imaging system design based on FPGA

    NASA Astrophysics Data System (ADS)

    Tang, Hong; Wang, Huawei; Cao, Jianzhong; Qiao, Mingrui

    2015-10-01

    CMOS sensors have more advantages than traditional CCD sensors. The imaging system based on CMOS has become a hot spot in research and development. In order to achieve the real-time data acquisition and high-speed transmission, we design a high-speed CMOS imaging system on account of FPGA. The core control chip of this system is XC6SL75T and we take advantages of CameraLink interface and AM41V4 CMOS image sensors to transmit and acquire image data. AM41V4 is a 4 Megapixel High speed 500 frames per second CMOS image sensor with global shutter and 4/3" optical format. The sensor uses column parallel A/D converters to digitize the images. The CameraLink interface adopts DS90CR287 and it can convert 28 bits of LVCMOS/LVTTL data into four LVDS data stream. The reflected light of objects is photographed by the CMOS detectors. CMOS sensors convert the light to electronic signals and then send them to FPGA. FPGA processes data it received and transmits them to upper computer which has acquisition cards through CameraLink interface configured as full models. Then PC will store, visualize and process images later. The structure and principle of the system are both explained in this paper and this paper introduces the hardware and software design of the system. FPGA introduces the driven clock of CMOS. The data in CMOS is converted to LVDS signals and then transmitted to the data acquisition cards. After simulation, the paper presents a row transfer timing sequence of CMOS. The system realized real-time image acquisition and external controls.

  7. Load insensitive electrical device. [power converters for supplying direct current at one voltage from a source at another voltage

    NASA Technical Reports Server (NTRS)

    Schwarz, F. C. (Inventor)

    1974-01-01

    A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

  8. Design and Development of High Voltage Direct Current (DC) Sources for the Solar Array Module Plasma Interaction Experiment

    NASA Technical Reports Server (NTRS)

    Bibyk, Irene K.; Wald, Lawrence W.

    1995-01-01

    Two programmable, high voltage DC power supplies were developed as part of the flight electronics for the Solar Array Module Plasma Interaction Experiment (SAMPIE). SAMPIE's primary objectives were to study and characterize the high voltage arcing and parasitic current losses of various solar cells and metal samples within the space plasma of low earth orbit (LEO). High voltage arcing can cause large discontinuous changes in spacecraft potential which lead to damage of the power system materials and significant Electromagnetic Interference (EMI). Parasitic currents cause a change in floating potential which lead to reduced power efficiency. These primary SAMPIE objectives were accomplished by applying artificial biases across test samples over a voltage range from -600 VDC to +300 VDC. This paper chronicles the design, final development, and test of the two programmable high voltage sources for SAMPIE. The technical challenges to the design for these power supplies included vacuum, space plasma effects, thermal protection, Shuttle vibrations and accelerations.

  9. Comprehensive procedural approach for transferring or comparative analysis of analogue IP building blocks towards different CMOS technologies

    NASA Astrophysics Data System (ADS)

    Gevaert, Dorine M.

    2009-05-01

    The challenges for the next generation of integrated circuit design of analogue and mixed-signal building blocks in standard CMOS technologies for signal conversion demand research progress in the emerging scientific fields of device physics and modelling, converter architectures, design automation, quality assurance and cost factor analysis. Estimation of mismatch for analogue building blocks at the conceptual level and the impact on active area is not a straightforward calculation. The proposed design concepts reduce the over-sizing of transistors, compared with the existing methods, with 15 to 20% for the same quality specification. Besides the reduction of the silicon cost also the design time cost for new topologies is reduced considerably. Comparison has been done for current mode converters (ADC and DAC) and focussing on downscaling technologies. The developed method offers an integrated approach on the estimation of architecture performances, yield and IP-reuse. Matching energy remains constant over process generations and will be the limiting factor for current signal processing. The comprehensive understanding of all sources of mismatches and the use of physical based mismatch modelling in the prediction of mismatch errors, more adequate and realistic sizing of all transistors will result in an overall area reduction of analogue IP blocks. For each technology the following design curves are automatically developed: noise curves for a specified signal bandwidth, choice of overdrive voltage versus lambda and output resistance, physical mismatch error modelling on target current levels. The procedural approach shares knowledge of several design curves and speeds up the design time.

  10. Controlling Influence of Magnetic Field on Solar Wind Outflow: An Investigation using Current Sheet Source Surface Model

    NASA Astrophysics Data System (ADS)

    Poduval, Bala

    2016-05-01

    The Wang and Sheeley empirical relationship between magnetic flux tube expansion (FTE) in the inner corona and the solar wind speed (SWS) observed near the Earth's orbit forms the basis of current solar wind prediction techniques such as WSA/ENLIL. Based on this concept, the Current Sheet Source Surface (CSSS) model, built on a corona in magnetostatic equilibrium incorporating electric currents, has recently been validated for solar wind prediction. We present the initial results of an investigation of the influence of solar magnetic field in determining the solar wind outflow using the CSSS model. We found that there is significant temporal variation in the functional form of FTE--SWS relation and that the accuracy of CSSS predictions are nearly twice better than the PFSS predcitions. We attribute the greater accuracy of CSSS predictions to the model's capability to trace the solar wind sources better than the PFSS model and, perhaps, the treatment of electric currents in the inner corona in the CSSS model.Synoptic maps of coronal magnetic field, similar to the photospheric ones, are still a long way away, though techniques are under development, especially using the Coronal Multi-Channel Polarimeter data. And the near--Sun regions below 0.3 AU remain unexplored until Solar Probe Plus and Solar Orbiter are launched. A well-validated model of the corona capable of providing reliable solar wind conditions in the near-Sun region will be of great use in interpreting the data collected by these spacecraft. The magnetohydrodynamic models such as ENLIL for space weather prediction, require ambient plasma and magnetic field information at their inner boundaries, usually provided by magnetostatic models, such as PFSS, in the absence of sufficient observational data. Our present work is an attempt to provide methods to generate reliable solar wind conditions in the near-Sun region.

  11. Non-invasive probe diagnostic method for electron temperature and ion current density in atmospheric pressure plasma jet source

    SciTech Connect

    Kim, Young-Cheol; Kim, Yu-Sin; Lee, Hyo-Chang; Moon, Jun-Hyeon; Chung, Chin-Wook; Kim, Yunjung; Cho, Guangsup

    2015-08-15

    The electrical probe diagnostics are very hard to be applied to atmospheric plasmas due to severe perturbation by the electrical probes. To overcome this, the probe for measuring electron temperature and ion current density is indirectly contacted with an atmospheric jet source. The plasma parameters are obtained by using floating harmonic analysis. The probe is mounted on the quartz tube that surrounds plasma. When a sinusoidal voltage is applied to a probe contacting on a quartz tube, the electrons near the sheath at dielectric tube are collected and the probe current has harmonic components due to probe sheath nonlinearity. From the relation of the harmonic currents and amplitude of the sheath voltage, the electron temperature near the wall can be obtained with collisional sheath model. The electron temperatures and ion current densities measured at the discharge region are in the ranges of 2.7–3.4 eV and 1.7–5.2 mA/cm{sup 2} at various flow rates and input powers.

  12. Real-time reconfigurable subthreshold CMOS perceptron.

    PubMed

    Aunet, S; Oelmann, B; Norseng, P A; Berg, Y

    2008-04-01

    In this paper, a new, real-time reconfigurable perceptron circuit element is presented. A six-transistor version used as a threshold gate, having a fan-in of three, producing adequate outputs for threshold of T =1, 2 and 3 is demonstrated by chip measurements. Subthreshold operation for supply voltages in the range of 100-350 mV is shown. The circuit performs competitively with a standard static complimentary metal-oxide-semiconductor (CMOS) implementation when maximum speed and energy delay product are taken into account, when used in a ring oscillator. Functionality per transistor is, to our knowledge, the highest reported for a variety of comparable circuits not based on floating gate techniques. Statistical simulations predict probabilities for making working circuits under mismatch and process variations. The simulations, in 120-nm CMOS, also support discussions regarding lower limits to supply voltage and redundancy. A brief discussion on how the circuit may be exploited as a basic building block for future defect tolerant mixed signal circuits, as well as neural networks, exploiting redundancy, is included.

  13. The 1.2 micron CMOS technology

    NASA Technical Reports Server (NTRS)

    Pina, C. A.

    1985-01-01

    A set of test structures was designed using the Jet Propulsion Laboratory (JPL) test chip assembler and was used to evaluate the first CMOS-bulk foundry runs with feature sizes of 1.2 microns. In addition to the problems associated with the physical scaling of the structures, this geometry provided an additional set of problems, since the design files had to be generated in such a way as to be capable of being processed through p-well, n-well, and twin-well processing lines. This requirement meant that the files containing the geometric design rules as well as the structure design files had to produce process-insensitive designs, a requirement that does not apply to the more mature 3.0-micron CMOS feature size technology. Because of the photolithographic steps required with this feature size, the maximum allowable chip size was 10 x 10 mm, and this chip was divided into 24 project areas, with each area being 1.6 x 1.6 mm in size. The JPL-designed structures occupied 13 out of the 21 allowable project sizes and provided the only test information obtained from these three preliminary runs. The structures were used to successfully evaluate three different manufacturing runs through two separate foundries.

  14. A highly sensitive CMOS digital Hall sensor for low magnetic field applications.

    PubMed

    Xu, Yue; Pan, Hong-Bin; He, Shu-Zhuan; Li, Li

    2012-01-01

    Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.

  15. A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications

    PubMed Central

    Xu, Yue; Pan, Hong-Bin; He, Shu-Zhuan; Li, Li

    2012-01-01

    Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ±2 mT magnetic field and output a digital Hall signal in a wide temperature range from −40 °C to 120 °C. PMID:22438758

  16. A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

    PubMed Central

    Feruglio, Sylvain; Lu, Guo-Neng; Garda, Patrick; Vasilescu, Gabriel

    2008-01-01

    A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.

  17. The Speedster-EXD - A New Event-Triggered Hybrid CMOS X-ray Detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher; Falcone, A.; Prieskorn, Z.; Burrows, D. N.

    2014-01-01

    We report on the development of a new Teledyne Imaging Systems hybrid CMOS x-ray detector called the Speedster-EXD which is capable of event-triggered read-out. Hybrid CMOS detectors currently have many advantages over CCDs including lower susceptibility to radiation damage, lower power consumption, and faster read out time to avoid pile-up. In addition to these advantages, the Speedster-EXD has new in-pixel circuitry which includes CDS subtraction to reduce read noise and a CTIA amplifier to eliminate interpixel capacitance crosstalk. The new circuitry also includes an in-pixel comparator that triggers on x-ray events. The comparator feature allows the detector to only read pixels in which an x-ray is detected. This feature increases the detector array effective frame rate by orders of magnitude. The current advantages of hybrid CMOS x-ray detectors combined with the new in-pixel circuitry makes the Speedster-EXD an ideal candidate for future high throughput x-ray missions requiring large-format silicon imagers.

  18. The Speedster-EXD - A New Event-Triggered Hybrid CMOS X-ray Detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher; Falcone, Abraham; Prieskorn, Zachary; Burrows, David N.

    2014-08-01

    We present the characterization of a new event driven x-ray hybrid CMOS detector developed by Teledyne imaging Sensors in collaboration with Penn State University. Hybrid CMOS detectors currently have many advantages over CCD’s including lower susceptibility to radiation damage, lower power consumption, and faster read-out time to avoid pile-up. The Speedster-EXD includes an in-pixel comparator that enables read out of only the pixels with signal from an x-ray event. The comparator threshold can be set by the user and only pixels with signal above this threshold are read out. This event-driven readout feature can increase effective frame rates by orders of magnitude, enabling future x-ray missions. The Speedster-EXD hybrid CMOS detector also has additional features that improve upon our previous generation of detectors including: (1) a low-noise, high-gain CTIA amplifier to eliminate interpixel capacitance crosstalk, (2) four different gain modes to optimize either full well capacity or energy resolution, and (3) in-pixel CDS subtraction to reduce read noise. We present the read noise, dark current, interpixel capacitance, energy resolution, and gain variation measurements of the Speedster-EXD detector.

  19. Controlling Influence of Magnetic Field on Solar Wind Outflow: An Investigation using Current Sheet Source Surface Model

    NASA Astrophysics Data System (ADS)

    Poduval, B.

    2016-08-01

    This Letter presents the results of an investigation into the controlling influence of large-scale magnetic field of the Sun in determining the solar wind outflow using two magnetostatic coronal models: current sheet source surface (CSSS) and potential field source surface. For this, we made use of the Wang and Sheeley inverse correlation between magnetic flux expansion rate (FTE) and observed solar wind speed (SWS) at 1 au. During the period of study, extended over solar cycle 23 and beginning of solar cycle 24, we found that the coefficients of the fitted quadratic equation representing the FTE-SWS inverse relation exhibited significant temporal variation, implying the changing pattern of the influence of FTE on SWS over time. A particularly noteworthy feature is an anomaly in the behavior of the fitted coefficients during the extended minimum, 2008-2010 (CRs 2073-2092), which is considered due to the particularly complex nature of the solar magnetic field during this period. However, this variation was significant only for the CSSS model, though not a systematic dependence on the phase of the solar cycle. Further, we noticed that the CSSS model demonstrated better solar wind prediction during the period of study, which we attribute to the treatment of volume and sheet currents throughout the corona and the more accurate tracing of footpoint locations resulting from the geometry of the model.

  20. Controlling Influence of Magnetic Field on Solar Wind Outflow: An Investigation using Current Sheet Source Surface Model

    NASA Astrophysics Data System (ADS)

    Poduval, B.

    2016-08-01

    This Letter presents the results of an investigation into the controlling influence of large-scale magnetic field of the Sun in determining the solar wind outflow using two magnetostatic coronal models: current sheet source surface (CSSS) and potential field source surface. For this, we made use of the Wang and Sheeley inverse correlation between magnetic flux expansion rate (FTE) and observed solar wind speed (SWS) at 1 au. During the period of study, extended over solar cycle 23 and beginning of solar cycle 24, we found that the coefficients of the fitted quadratic equation representing the FTE–SWS inverse relation exhibited significant temporal variation, implying the changing pattern of the influence of FTE on SWS over time. A particularly noteworthy feature is an anomaly in the behavior of the fitted coefficients during the extended minimum, 2008–2010 (CRs 2073–2092), which is considered due to the particularly complex nature of the solar magnetic field during this period. However, this variation was significant only for the CSSS model, though not a systematic dependence on the phase of the solar cycle. Further, we noticed that the CSSS model demonstrated better solar wind prediction during the period of study, which we attribute to the treatment of volume and sheet currents throughout the corona and the more accurate tracing of footpoint locations resulting from the geometry of the model.

  1. Design of a CMOS Potentiostat Circuit for Electrochemical Detector Arrays

    PubMed Central

    Ayers, Sunitha; Gillis, Kevin D.; Lindau, Manfred; Minch, Bradley A.

    2010-01-01

    High-throughput electrode arrays are required for advancing devices for testing the effect of drugs on cellular function. In this paper, we present design criteria for a potentiostat circuit that is capable of measuring transient amperometric oxidation currents at the surface of an electrode with submillisecond time resolution and picoampere current resolution. The potentiostat is a regulated cascode stage in which a high-gain amplifier maintains the electrode voltage through a negative feedback loop. The potentiostat uses a new shared amplifier structure in which all of the amplifiers in a given row of detectors share a common half circuit permitting us to use fewer transistors per detector. We also present measurements from a test chip that was fabricated in a 0.5-μm, 5-V CMOS process through MOSIS. Each detector occupied a layout area of 35μm × 15μm and contained eight transistors and a 50-fF integrating capacitor. The rms current noise at 2kHz bandwidth is ≈ 110fA. The maximum charge storage capacity at 2kHz is 1.26 × 106 electrons. PMID:20514150

  2. Ion sources for ion implantation technology (invited)

    SciTech Connect

    Sakai, Shigeki Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  3. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    PubMed

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure. PMID:26726356

  4. Dynamic positive feedback source-coupled logic (D-PFSCL)

    NASA Astrophysics Data System (ADS)

    Gupta, Kirti; Pandey, Neeta; Gupta, Maneesha

    2016-10-01

    This paper presents dynamic positive feedback source-coupled logic (D-PFSCL) style which is derived from positive feedback source-coupled logic (PFSCL). The proposed logic style uses dynamic current source in contrast to constant current source of PFSCL to attain lower power consumption. Two techniques for D-PFSCL style-based multistage applications are suggested. Several D-PFSCL gates are simulated and compared with the respective PFSCL counterparts through SPICE simulations by using Taiwan semiconductor manufacturing company 0.18 µm CMOS technology parameters. A maximum power reduction of 84% is achieved for D-PFSCL gates. The effect of process variation on the power consumption of the D-PFSCL gates shows a maximum variation factor of 1.5 between the best and the worst cases.

  5. Monolithic CMUT on CMOS Integration for Intravascular Ultrasound Applications

    PubMed Central

    Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F. Levent

    2012-01-01

    One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter based volumetric imaging arrays where the elements need to be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom designed CMOS receiver electronics from a commercial IC foundry. The CMUT on CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT to CMOS interconnection. This CMUT to CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire bonding method. Characterization experiments indicate that the CMUT on CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Experiments on a 1.6 mm diameter dual-ring CMUT array with a 15 MHz center frequency show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging CTOs located 1 cm away from the CMUT array. PMID:23443701

  6. All-CMOS night vision viewer with integrated microdisplay

    NASA Astrophysics Data System (ADS)

    Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

    2014-02-01

    The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

  7. Topography, Power and Current Source Density of Theta Oscillations during Reward Processing as Markers for Alcohol Dependence

    PubMed Central

    Kamarajan, Chella; Rangaswamy, Madhavi; Manz, Niklas; Chorlian, David B.; Pandey, Ashwini K.; Roopesh, Bangalore N.; Porjesz, Bernice

    2013-01-01

    Recent studies have linked alcoholism with a dysfunctional neural reward system. Although several electrophysiological studies have explored reward processing in healthy individuals, such studies in alcohol dependent individuals are quite rare. The present study examines theta oscillations during reward processing in abstinent alcoholics. The electroencephalogram (EEG) was recorded in 38 abstinent alcoholics and 38 healthy controls as they performed a single outcome gambling task which involved outcomes of either loss or gain of an amount (10¢ or 50¢) that was bet. Event-related theta band (3.0–7.0 Hz) power following each outcome stimulus was computed using the S-transform method. Theta power at the time window of the outcome-related negativity (ORN) and positivity (ORP) (200–500 ms) was compared across groups and outcome conditions. Additionally, behavioral data of impulsivity and task performance were analyzed. The alcoholic group showed significantly decreased theta power during reward processing compared to controls. Current Source Density (CSD) maps of alcoholics revealed weaker and diffuse source activity for all conditions and weaker bilateral prefrontal sources during the Loss 50 condition as compared to controls who manifested stronger and focused midline sources. Further, alcoholics exhibited increased impulsivity and risk-taking on the behavioral measures. A strong association between reduced anterior theta power and impulsive task-performance was observed. It is suggested that decreased power and weaker and diffuse CSD in alcoholics may be due to dysfunctional neural reward circuitry. The relationship among alcoholism, theta oscillations, reward processing and impulsivity could offer clues to understand brain circuitries that mediate reward processing and inhibitory control. PMID:21520344

  8. Topography, power, and current source density of θ oscillations during reward processing as markers for alcohol dependence.

    PubMed

    Kamarajan, Chella; Rangaswamy, Madhavi; Manz, Niklas; Chorlian, David B; Pandey, Ashwini K; Roopesh, Bangalore N; Porjesz, Bernice

    2012-05-01

    Recent studies have linked alcoholism with a dysfunctional neural reward system. Although several electrophysiological studies have explored reward processing in healthy individuals, such studies in alcohol-dependent individuals are quite rare. The present study examines theta oscillations during reward processing in abstinent alcoholics. The electroencephalogram (EEG) was recorded in 38 abstinent alcoholics and 38 healthy controls as they performed a single outcome gambling task, which involved outcomes of either loss or gain of an amount (10 or 50¢) that was bet. Event-related theta band (3.0-7.0 Hz) power following each outcome stimulus was computed using the S-transform method. Theta power at the time window of the outcome-related negativity (ORN) and positivity (ORP) (200-500 ms) was compared across groups and outcome conditions. Additionally, behavioral data of impulsivity and task performance were analyzed. The alcoholic group showed significantly decreased theta power during reward processing compared to controls. Current source density (CSD) maps of alcoholics revealed weaker and diffuse source activity for all conditions and weaker bilateral prefrontal sources during the Loss 50 condition when compared with controls who manifested stronger and focused midline sources. Furthermore, alcoholics exhibited increased impulsivity and risk-taking on the behavioral measures. A strong association between reduced anterior theta power and impulsive task-performance was observed. It is suggested that decreased power and weaker and diffuse CSD in alcoholics may be due to dysfunctional neural reward circuitry. The relationship among alcoholism, theta oscillations, reward processing, and impulsivity could offer clues to understand brain circuitries that mediate reward processing and inhibitory control.

  9. Low-dose performance of wafer-scale CMOS-based X-ray detectors

    NASA Astrophysics Data System (ADS)

    Maes, Willem H.; Peters, Inge M.; Smit, Chiel; Kessener, Yves; Bosiers, Jan

    2015-03-01

    Compared to published amorphous-silicon (TFT) based X-ray detectors, crystalline silicon CMOS-based active-pixel detectors exploit the benefits of low noise, high speed, on-chip integration and featuring offered by CMOS technology. This presentation focuses on the specific advantage of high image quality at very low dose levels. The measurement of very low dose performance parameters like Detective Quantum Efficiency (DQE) and Noise Equivalent Dose (NED) is a challenge by itself. Second-order effects like defect pixel behavior, temporal and quantization noise effects, dose measurement accuracy and limitation of the x-ray source settings will influence the measurements at very low dose conditions. Using an analytical model to predict the low dose behavior of a detector from parameters extracted from shot-noise limited dose levels is presented. These models can also provide input for a simulation environment for optimizing the performance of future detectors. In this paper, models for predicting NED and the DQE at very low dose are compared to measurements on different CMOS detectors. Their validity for different sensor and optical stack combinations as well as for different x-ray beam conditions was validated.

  10. Column-Parallel Correlated Multiple Sampling Circuits for CMOS Image Sensors and Their Noise Reduction Effects

    PubMed Central

    Suh, Sungho; Itoh, Shinya; Aoyama, Satoshi; Kawahito, Shoji

    2010-01-01

    For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e− for the simple integration CMS and 75 dB and 2.2 e− for the folding integration CMS, respectively, are obtained. PMID:22163400

  11. Gun muzzle flash detection using a CMOS single photon avalanche diode

    NASA Astrophysics Data System (ADS)

    Merhav, Tomer; Savuskan, Vitali; Nemirovsky, Yael

    2013-10-01

    Si based sensors, in particular CMOS Image sensors, have revolutionized low cost imaging systems but to date have hardly been considered as possible candidates for gun muzzle flash detection, due to performance limitations, and low SNR in the visible spectrum. In this study, a CMOS Single Photon Avalanche Diode (SPAD) module is used to record and sample muzzle flash events in the visible spectrum, from representative weapons, common on the modern battlefield. SPADs possess two crucial properties for muzzle flash imaging - Namely, very high photon detection sensitivity, coupled with a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. This enables high sampling frequencies in the kilohertz range without SNR degradation, in contrast to regular CMOS image sensors. To date, the SPAD has not been utilized for flash detection in an uncontrolled environment, such as gun muzzle flash detection. Gun propellant manufacturers use alkali salts to suppress secondary flashes ignited during the muzzle flash event. Common alkali salts are compounds based on Potassium or Sodium, with spectral emission lines around 769nm and 589nm, respectively. A narrow band filter around the Potassium emission doublet is used in this study to favor the muzzle flash signal over solar radiation. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength under the specified imaging conditions. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics.

  12. A monolithically integrated torsional CMOS-MEMS relay

    NASA Astrophysics Data System (ADS)

    Riverola, M.; Sobreviela, G.; Torres, F.; Uranga, A.; Barniol, N.

    2016-11-01

    We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the fabrication costs and batch production. In particular, the relay is monolithically integrated in the back end of line of a commercial standard CMOS technology (AMS 0.35 μm) and released by means of a simple one-step mask-less wet etching. The fabricated torsional relay exhibits an extremely steep switching behaviour symmetrical about both contact sides with an on-state contact resistance in the k Ω -range throughout the on-off cycling test.

  13. Real time M2 and beam parameter product measurement using GigE CMOS sensors

    NASA Astrophysics Data System (ADS)

    Scaggs, Michael; Haas, Gil

    2016-03-01

    The ISO 11146-1 standard for measurement of a laser's M-square requires the minimum measurement of five (5) spatial profiles within the first Rayleigh range and an addition five (5) outside the second Rayleigh range. The first five spatial profiles within the first Rayleigh range establish the beam waist and its location; the second five beyond the second Rayleigh range establish the divergence or convergence from the focusing lens for the M-square computation. The majority of methods used to date are all time averaged and as such are incapable of a real time M-square measurement. We present an ISO 11146-1 compliant method for measuring single shot M-square or beam parameter product values or the measurement of continuous wave sources at rates greater than five frames per second utilizing a pair of GigE based CMOS sensors. One GigE CMOS sensor is setup to measure the minimum of five spots within the first Rayleigh range for the establishment of the beam waist and its location. A second GigE CMOS sensor is setup to measure the five spatial profiles beyond the second Rayleigh range for the determination of the beam divergence from the focusing lens. Both GigE cameras utilize optics that passively create multiple spatial time slices of the beam and superimpose these time slices on the CMOS sensor in real time resulting in the ability to make single pulse measurements or continuous wave measurements at speeds of greater than five frames per second with full ISO 11146-1 compliance.

  14. 1984 Joint Congress: CGU and CMOS

    NASA Astrophysics Data System (ADS)

    Camfield, P. A.

    The Canadian Geophysical Union (CGU) had a very successful joint meeting with the Canadian Meteorological and Oceanographic Society (CMOS) at Dalhousie University in Halifax, Nova Scotia, May 29 to June 1, 1984. Thirty-five scientific sessions were held in the 4-day meeting period.The invited speaker for CGU at the plenary session, David Simpson of Lamont-Doherty Geological Observatory, spoke about the Halifax Explosion of 1917 in terms of a seismic event. The 2.6-kt explosion was the largest man-made explosion prior to the detonation of the first atomic bombs. The effective seismic magnitude of the event may have been m, = 2.5-3.0.

  15. Log polar image sensor in CMOS technology

    NASA Astrophysics Data System (ADS)

    Scheffer, Danny; Dierickx, Bart; Pardo, Fernando; Vlummens, Jan; Meynants, Guy; Hermans, Lou

    1996-08-01

    We report on the design, design issues, fabrication and performance of a log-polar CMOS image sensor. The sensor is developed for the use in a videophone system for deaf and hearing impaired people, who are not capable of communicating through a 'normal' telephone. The system allows 15 detailed images per second to be transmitted over existing telephone lines. This framerate is sufficient for conversations by means of sign language or lip reading. The pixel array of the sensor consists of 76 concentric circles with (up to) 128 pixels per circle, in total 8013 pixels. The interior pixels have a pitch of 14 micrometers, up to 250 micrometers at the border. The 8013-pixels image is mapped (log-polar transformation) in a X-Y addressable 76 by 128 array.

  16. CMOS imager for pointing and tracking applications

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

    2006-01-01

    Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

  17. Latchup in CMOS devices from heavy ions

    NASA Technical Reports Server (NTRS)

    Soliman, K.; Nichols, D. K.

    1983-01-01

    It is noted that complementary metal oxide semiconductor (CMOS) microcircuits are inherently latchup prone. The four-layer n-p-n-p structures formed from the parasitic pnp and npn transistors make up a silicon controlled rectifier. If properly biased, this rectifier may be triggered 'ON' by electrical transients, ionizing radiation, or a single heavy ion. This latchup phenomenon might lead to a loss of functionality or device burnout. Results are presented from tests on 19 different device types from six manufacturers which investigate their latchup sensitivity with argon and krypton beams. The parasitic npnp paths are identified in general, and a qualitative rationale is given for latchup susceptibility, along with a latchup cross section for each type of device. Also presented is the correlation between bit-flip sensitivity and latchup susceptibility.

  18. CMOS digital pixel sensors: technology and applications

    NASA Astrophysics Data System (ADS)

    Skorka, Orit; Joseph, Dileepan

    2014-04-01

    CMOS active pixel sensor technology, which is widely used these days for digital imaging, is based on analog pixels. Transition to digital pixel sensors can boost signal-to-noise ratios and enhance image quality, but can increase pixel area to dimensions that are impractical for the high-volume market of consumer electronic devices. There are two main approaches to digital pixel design. The first uses digitization methods that largely rely on photodetector properties and so are unique to imaging. The second is based on adaptation of a classical analog-to-digital converter (ADC) for in-pixel data conversion. Imaging systems for medical, industrial, and security applications are emerging lower-volume markets that can benefit from these in-pixel ADCs. With these applications, larger pixels are typically acceptable, and imaging may be done in invisible spectral bands.

  19. Impact of the Diamond Light Source on research in Earth and environmental sciences: current work and future perspectives.

    PubMed

    Burke, Ian T; Mosselmans, J Frederick W; Shaw, Samuel; Peacock, Caroline L; Benning, Liane G; Coker, Victoria S

    2015-03-01

    Diamond Light Source Ltd celebrated its 10th anniversary as a company in December 2012 and has now accepted user experiments for over 5 years. This paper describes the current facilities available at Diamond and future developments that enhance its capacities with respect to the Earth and environmental sciences. A review of relevant research conducted at Diamond thus far is provided. This highlights how synchrotron-based studies have brought about important advances in our understanding of the fundamental parameters controlling highly complex mineral-fluid-microbe interface reactions in the natural environment. This new knowledge not only enhances our understanding of global biogeochemical processes, but also provides the opportunity for interventions to be designed for environmental remediation and beneficial use.

  20. Impact of the Diamond Light Source on research in Earth and environmental sciences: current work and future perspectives

    PubMed Central

    Burke, Ian T.; Mosselmans, J. Frederick W.; Shaw, Samuel; Peacock, Caroline L.; Benning, Liane G.; Coker, Victoria S.

    2015-01-01

    Diamond Light Source Ltd celebrated its 10th anniversary as a company in December 2012 and has now accepted user experiments for over 5 years. This paper describes the current facilities available at Diamond and future developments that enhance its capacities with respect to the Earth and environmental sciences. A review of relevant research conducted at Diamond thus far is provided. This highlights how synchrotron-based studies have brought about important advances in our understanding of the fundamental parameters controlling highly complex mineral–fluid–microbe interface reactions in the natural environment. This new knowledge not only enhances our understanding of global biogeochemical processes, but also provides the opportunity for interventions to be designed for environmental remediation and beneficial use. PMID:25624516

  1. Impact of the Diamond Light Source on research in Earth and environmental sciences: current work and future perspectives.

    PubMed

    Burke, Ian T; Mosselmans, J Frederick W; Shaw, Samuel; Peacock, Caroline L; Benning, Liane G; Coker, Victoria S

    2015-03-01

    Diamond Light Source Ltd celebrated its 10th anniversary as a company in December 2012 and has now accepted user experiments for over 5 years. This paper describes the current facilities available at Diamond and future developments that enhance its capacities with respect to the Earth and environmental sciences. A review of relevant research conducted at Diamond thus far is provided. This highlights how synchrotron-based studies have brought about important advances in our understanding of the fundamental parameters controlling highly complex mineral-fluid-microbe interface reactions in the natural environment. This new knowledge not only enhances our understanding of global biogeochemical processes, but also provides the opportunity for interventions to be designed for environmental remediation and beneficial use. PMID:25624516

  2. Integrated pressure-sensing microsystem by CMOS IC technology for barometal applications

    NASA Astrophysics Data System (ADS)

    Zhou, Minxin; Huang, Qing-An

    2001-10-01

    Most currently integrated silicon microsystems available for pressure sensing are based on preprocessing before CMOS IC technology. These microsystems are generally very sensitive to parasitism effect and not available for IC-compatible process. This limits the accuracy of the microsystem and batch-fabrication. Calibration cost is also increased. To overcome these problems, a new generation of pressure microsystems without preprocessing CMOS IC technology has been proposed. This pressure-sensing system consists of a miniature silicon capacitive sensor, fabricated with silicon-silicon bonding technique, and a detection integrated circuit. Only the standard layers of CMOS process are used to build the system and only several photolithography steps are necessary to achieve the micromachined structure in postprocessing, so a high long-term stability could be assured. The entire system converts absolute pressure changes, in the pressure range useful for barometal applications, to frequency changes. A reference capacitor is used in the system and a (delta) C model is applied to cancel out temperature dependence and to compensate non-linearity. The pressure range of the sensor is from 0.5 bar to 1.5bar and the temperature varies between -25 degree(s)C and -60 degree(s)C. A sensitivity of 50Hz/Torr could be achieved.

  3. a CMOS Millimeter-Wave Transceiver Embedded in a Semi-Confocal Fabry-Perot Cavity

    NASA Astrophysics Data System (ADS)

    Drouin, Brian; Tang, Adrian; Schlecht, Erich T.; Brageot, Emily; Daly, Adam M.; Gu, Qun Jane; Ye, Yu; Shu, Ran; Chang, M.-C. Frank; Kim, Rod M.

    2016-06-01

    The extension of radio-frequency CMOS circuitry into millimeter wavelengths promises the extension of spectroscopic techniques in compact, power efficient systems. We are now exploring the use of CMOS millimeter devices for low-mass, low-power instrumentation capable of remote or in-situ detection of gas composition during space missions. We have chosen to develop a Flygare-Balle type spectrometer, with a semi-confocal Fabry-Perot cavity to amplify the pump power of a mm-wavelength CMOS transmitter that is directly coupled to the planar mirror of the cavity. Since the initial report last year describing the designs, we have built a pulsed transceiver system at 89-104 GHz inside a 5 cm base length cavity and demonstrated cavity finesse up to 3000, allowing for modes with 30 MHz bandwidth and a sufficient cavity amplification factor for mW class transmitters. System and component testing revealed that the power-amplifier design (embedded in the chip) was faulty and the transceiver peak power is only 10 microwatts, which is insufficient for molecular excitation on the timescale of the gas residence time within the beam. An improved power amplifier circuit has been designed and is currently under fabrication, meanwhile, we have also developed a tunable synthesizer (embedded in the same chip) that allows for tuning over the full bandwidth at increments of 10 MHz. The presentation will cover these capabilities, describing the system and component tests, as well as any new developments.

  4. Spin blockade in a triple silicon quantum dot in CMOS technology

    NASA Astrophysics Data System (ADS)

    Prati, E.; Petretto, G.; Belli, M.; Mazzeo, G.; Cocco, S.; de Michielis, M.; Fanciulli, M.; Guagliardo, F.; Vinet, M.; Wacquez, R.

    2012-02-01

    We study the spin blockade (SB) phenomenon by quantum transport in a triple quantum dot made of two single electron transistors (SET) on a CMOS platform separated by an implanted multiple donor quantum dot [1]. Spin blockade condition [2] has been used in the past to realize single spin localization and manipulation in GaAs quantum dots [3]. Here, we reproduce the same physics in a CMOS preindustrial silicon quantum device. Single electron quantum dots are connected via an implanted quantum dot and exhibit SB in one current direction. We break the spin blockade by applying a magnetic field of few tesla. Our experimental results are explained by a theoretical microscopic scheme supported by simulations in which only some of the possible processes through the triple quantum dot are spin blocked, according to the asymmetry of the coupling capacitances with the control gates and the central dot. Depending on the spin state, the SB may be both lifted and induced. Spin control in CMOS quantum dots is a necessary condition to realize large fabrication of spin qubits in some solid state silicon quantum device architectures.[0pt] [1] Pierre et al., Appl. Phys. Lett., 95, 24, 242107 (2009); [2] Liu et al., Phys. Rev. B 77, 073310 (2008); [3] Koppens et al., Nature 442, 766-771 (2006)

  5. Rapid and reliable seismic source characterization in earthquake early warning systems: current methodologies, results, and new perspectives

    NASA Astrophysics Data System (ADS)

    Colombelli, Simona; Zollo, Aldo

    2016-04-01

    In the present paper, we provided a review of the main principles and methodologies on which the current earthquake early warning systems are grounded and will also provide a perspective view for next future developments and improvements. First, we introduce the standard methodologies for the source characterization in earthquake early warning, with a special focus on the real-time earthquake magnitude determination. We discuss the suitability of existent methodologies and empirical regression laws for very large events. We then present the different approaches for the rapid prediction of the ground shaking and of the potential damaged zone, both based on traditional seismic data and on the use of continuous GPS data. Finally, the last part of the paper provides the perspective view toward a next generation of early warning systems, linking new research achievements about the earthquake rupture nucleation and the development of new methods/technologies aimed at a fast and high-resolution, real-time modeling of the ongoing source process and accurate prediction of the quake shaking at the regional and local scale.

  6. Seasonal characteristics and current sources of OCPs and PCBs and enantiomeric signatures of chiral OCPs in the atmosphere of Vietnam.

    PubMed

    Wang, Weitao; Wang, Yinghui; Zhang, Ruijie; Wang, Shaopeng; Wei, Chaoshuai; Chaemfa, Chakra; Li, Jun; Zhang, Gan; Yu, Kefu

    2016-01-15

    Passive air samplers (PAS) were deployed concurrently at 15 locations (nine urban sites and six rural sites) in Vietnam and exposed for approximately 6 weeks from June 26, 2012 to August 26, 2012 and from December 8, 2012 to February 8, 2013. The concentration, composition and enantiomeric signatures of the target compound and Air Mass Backward Trajectories of the 15 sampling sites are presented and discussed in this study. Relatively clean air mass from ocean and similar concentrations and composition of POPs between the south and north of Vietnam indicate that local emissions is most likely the major source of POPs in Vietnam. Technical DDT and technical HCH were widely used in Vietnam and corresponding quantitative data suggests the sporadic use. The preferential degradation of (+)-α-HCH was found in all sampling sites, which could be a regional characteristic of Vietnam. High trans-/cis-chlordane (TC/CC) ratios indicate the current use of technical chlordane for termite control. PCA estimated that main source of PCBs present in the atmosphere of Vietnam was uncontrolled discarded e-waste.

  7. System-in Package of Integrated Humidity Sensor Using CMOS-MEMS Technology.

    PubMed

    Lee, Sung Pil

    2015-10-01

    Temperature/humidity microchips with micropump were fabricated using a CMOS-MEMS process and combined with ZigBee modules to implement a sensor system in package (SIP) for a ubiquitous sensor network (USN) and/or a wireless communication system. The current of a diode temperature sensor to temperature and a normalized current of FET humidity sensor to relative humidity showed linear characteristics, respectively, and the use of the micropump has enabled a faster response. A wireless reception module using the same protocol as that in transmission systems processed the received data within 10 m and showed temperature and humidity values in the display.

  8. Development of an all-permanent-magnet microwave ion source equipped with multicusp magnetic fields for high current proton beam production.

    PubMed

    Tanaka, M; Hara, S; Seki, T; Iga, T

    2008-02-01

    An all-permanent-magnet (APM) microwave hydrogen ion source was developed to reduce the size and to simplify structure of a conventional solenoid coil microwave ion source developed for reliability improvement of high current proton linac application systems. The difficulty in developing the APM source was sensitive dependence of the source performance on axial magnetic field in the microwave discharge chamber. It was difficult to produce high current proton beam stably without precise tuning of the magnetic field using solenoid coils. We lowered the sensitivity using multicusp magnetic fields for plasma confinement at the discharge chamber sidewall of the source. This enabled stable high current proton beam production with the APM microwave ion source with no tuning coil. The water cooling and the power supply for the coils are not necessary for the APM source, which leads to better reliability and system simplification. The outer diameter of the APM source was around 300 mm, which was 20% lower than the coil source. The APM source produced a maximum hydrogen ion beam current of 65 mA (high current density of 330 mA/cm(2), proton ratio of 87%, and beam energy of 30 keV) with a 5 mm diameter extraction aperture, pulse width of 400 micros, and 20 Hz repetition rate at 1.3 kW microwave power. This performance is almost the same as the best performances of the conventional coil sources. The extracted ion beams were focused with electrostatic five-grid lens to match beam to acceptance of radio-frequency quadrupole linacs. The maximum focused beam current through the orifice (5 mm radius) and the lens was 36 mA and the 90% focused beam half-width was 1-2 mm.

  9. Sources, fate, and pathways of Leeuwin Current water in the Indian Ocean and Great Australian Bight: A Lagrangian study in an eddy-resolving ocean model

    NASA Astrophysics Data System (ADS)

    Yit Sen Bull, Christopher; van Sebille, Erik

    2016-03-01

    The Leeuwin Current is the dominant circulation feature in the eastern Indian Ocean, transporting tropical and subtropical water southward. While it is known that the Leeuwin Current draws its water from a multitude of sources, existing Indian Ocean circulation schematics have never quantified the fluxes of tropical and subtropical source water flowing into the Leeuwin Current. This paper uses virtual Lagrangian particles to quantify the transport of these sources along the Leeuwin Current's mean pathway. Here the pathways and exchange of Leeuwin Current source waters across six coastally bound sectors on the south-west Australian coast are analyzed. This constitutes the first quantitative assessment of Leeuwin Current pathways within an offline, 50 year integration time, eddy-resolving global ocean model simulation. Along the Leeuwin Current's pathway, we find a mean poleward transport of 3.7 Sv in which the tropical sources account for 60-78% of the transport. While the net transport is small, we see large transports flowing in and out of all the offshore boundaries of the Leeuwin Current sectors. Along the Leeuwin Current's pathway, we find that water from the Indonesian Throughflow contributes 50-66% of the seasonal signal. By applying conditions on the routes particles take entering the Leeuwin Current, we find particles are more likely to travel offshore north of 30°S, while south of 30°S, particles are more likely to continue downstream. We find a 0.2 Sv pathway of water from the Leeuwin Current's source regions, flowing through the entire Leeuwin Current pathway into the Great Australian Bight.

  10. Design of a New Acceleration System for High-Current Pulsed Proton Beams from an ECR Source

    NASA Astrophysics Data System (ADS)

    Cooper, Andrew L.; Pogrebnyak, Ivan; Surbrook, Jason T.; Kelly, Keegan J.; Carlin, Bret P.; Champagne, Arthur E.; Clegg, Thomas B.

    2014-03-01

    A primary objective for accelerators at TUNL's Laboratory for Experimental Nuclear Astrophysics (LENA) is to maximize target beam intensity to ensure a high rate of nuclear events during each experiment. Average proton target currents of several mA are needed from LENA's electron cyclotron resonance (ECR) ion source because nuclear cross sections decrease substantially at energies of interest <200 keV. We seek to suppress undesired continuous environmental background by pulsing the beam and detecting events only during beam pulses. To improve beam intensity and transport, we installed a more powerful, stable microwave system for the ECR plasma, and will install a new acceleration system. This system will: reduce defocusing effects of the beam's internal space charge; provide better vacuum with a high gas conductance accelerating column; suppress bremsstrahlung X-rays produced when backstreaming electrons strike internal acceleration tube structures; and provide better heat dissipation by using deionized water to provide the current drain needed to establish the accelerating tube's voltage gradient. Details of beam optical modeling calculations, proposed accelerating tube design, and initial beam pulsing tests will be described. Work supported in part by USDOE Office of HE and Nuclear Physics.

  11. Depleted CMOS pixels for LHC proton-proton experiments

    NASA Astrophysics Data System (ADS)

    Wermes, N.

    2016-07-01

    While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

  12. Implementation of CMOS Millimeter-Wave Devices for Rotational Spectroscopy

    NASA Astrophysics Data System (ADS)

    Drouin, Brian; Tang, Adrian; Schlecht, Erich T.; Daly, Adam M.; Brageot, Emily; Gu, Qun Jane; Ye, Yu; Shu, Ran; Chang, M.-C. Frank; Kim, Rod M.

    2015-06-01

    The extension of radio-frequency CMOS circuitry into millimeter wavelengths promises the extension of spectroscopic techniques in compact, power efficient systems. We are now exploring the use of CMOS millimeter devices for low-mass, low-power instrumentation capable of remote or in-situ detection of gas composition during space missions. This effort focuses on the development of a semi-confocal Fabry-Perot cavity with mm-wavelength CMOS transmitter and receiver attached directly to a cavity coupler. Placement of the devices within the cavity structure bypasses problems encountered with signal injection and extraction in traditional cavity designs and simultaneously takes full advantage of the miniaturized form of the CMOS hardware. The presentation will provide an overview of the project and details of the accomplishments thus far, including the development and testing of a pulse modulated 83-98 GHz transmitter.

  13. Tests of commercial colour CMOS cameras for astronomical applications

    NASA Astrophysics Data System (ADS)

    Pokhvala, S. M.; Reshetnyk, V. M.; Zhilyaev, B. E.

    2013-12-01

    We present some results of testing commercial colour CMOS cameras for astronomical applications. Colour CMOS sensors allow to perform photometry in three filters simultaneously that gives a great advantage compared with monochrome CCD detectors. The Bayer BGR colour system realized in colour CMOS sensors is close to the astronomical Johnson BVR system. The basic camera characteristics: read noise (e^{-}/pix), thermal noise (e^{-}/pix/sec) and electronic gain (e^{-}/ADU) for the commercial digital camera Canon 5D MarkIII are presented. We give the same characteristics for the scientific high performance cooled CCD camera system ALTA E47. Comparing results for tests of Canon 5D MarkIII and CCD ALTA E47 show that present-day commercial colour CMOS cameras can seriously compete with the scientific CCD cameras in deep astronomical imaging.

  14. CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

    NASA Technical Reports Server (NTRS)

    Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

    2006-01-01

    This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

  15. A safety monitoring system for taxi based on CMOS imager

    NASA Astrophysics Data System (ADS)

    Liu, Zhi

    2005-01-01

    CMOS image sensors now become increasingly competitive with respect to their CCD counterparts, while adding advantages such as no blooming, simpler driving requirements and the potential of on-chip integration of sensor, analogue circuitry, and digital processing functions. A safety monitoring system for taxi based on cmos imager that can record field situation when unusual circumstance happened is described in this paper. The monitoring system is based on a CMOS imager (OV7120), which can output digital image data through parallel pixel data port. The system consists of a CMOS image sensor, a large capacity NAND FLASH ROM, a USB interface chip and a micro controller (AT90S8515). The structure of whole system and the test data is discussed and analyzed in detail.

  16. Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

    NASA Astrophysics Data System (ADS)

    Cha, B. K.; Kim, J. Y.; Kim, Y. J.; Yun, S.; Cho, G.; Kim, H. K.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2012-04-01

    In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

  17. Sustained attention in skilled and novice martial arts athletes: a study of event-related potentials and current sources.

    PubMed

    Sanchez-Lopez, Javier; Silva-Pereyra, Juan; Fernandez, Thalia

    2016-01-01

    Background. Research on sports has revealed that behavioral responses and event-related brain potentials (ERP) are better in expert than in novice athletes for sport-related tasks. Focused attention is essential for optimal athletic performance across different sports but mainly in combat disciplines. During combat, long periods of focused attention (i.e., sustained attention) are required for a good performance. Few investigations have reported effects of expertise on brain electrical activity and its neural generators during sport-unrelated attention tasks. The aim of the present study was to assess the effect of expertise (i.e., skilled and novice martial arts athletes) analyzing the ERP during a sustained attention task (Continuous Performance Task; CPT) and the cortical three-dimensional distribution of current density, using the sLORETA technique. Methods. CPT consisted in an oddball-type paradigm presentation of five stimuli (different pointing arrows) where only one of them (an arrow pointing up right) required a motor response (i.e., target). CPT was administered to skilled and novice martial arts athletes while EEG were recorded. Amplitude ERP data from target and non-target stimuli were compared between groups. Subsequently, current source analysis for each ERP component was performed on each subject. sLORETA images were compared by condition and group using Statistical Non-Parametric Mapping analysis. Results. Skilled athletes showed significant amplitude differences between target and non-target conditions in early ERP components (P100 and P200) as opposed to the novice group; however, skilled athletes showed no significant effect of condition in N200 but novices did show a significant effect. Current source analysis showed greater differences in activations in skilled compared with novice athletes between conditions in the frontal (mainly in the Superior Frontal Gyrus and Medial Frontal Gyrus) and limbic (mainly in the Anterior Cingulate Gyrus) lobes

  18. Sustained attention in skilled and novice martial arts athletes: a study of event-related potentials and current sources

    PubMed Central

    Sanchez-Lopez, Javier; Silva-Pereyra, Juan

    2016-01-01

    Background. Research on sports has revealed that behavioral responses and event-related brain potentials (ERP) are better in expert than in novice athletes for sport-related tasks. Focused attention is essential for optimal athletic performance across different sports but mainly in combat disciplines. During combat, long periods of focused attention (i.e., sustained attention) are required for a good performance. Few investigations have reported effects of expertise on brain electrical activity and its neural generators during sport-unrelated attention tasks. The aim of the present study was to assess the effect of expertise (i.e., skilled and novice martial arts athletes) analyzing the ERP during a sustained attention task (Continuous Performance Task; CPT) and the cortical three-dimensional distribution of current density, using the sLORETA technique. Methods. CPT consisted in an oddball-type paradigm presentation of five stimuli (different pointing arrows) where only one of them (an arrow pointing up right) required a motor response (i.e., target). CPT was administered to skilled and novice martial arts athletes while EEG were recorded. Amplitude ERP data from target and non-target stimuli were compared between groups. Subsequently, current source analysis for each ERP component was performed on each subject. sLORETA images were compared by condition and group using Statistical Non-Parametric Mapping analysis. Results. Skilled athletes showed significant amplitude differences between target and non-target conditions in early ERP components (P100 and P200) as opposed to the novice group; however, skilled athletes showed no significant effect of condition in N200 but novices did show a significant effect. Current source analysis showed greater differences in activations in skilled compared with novice athletes between conditions in the frontal (mainly in the Superior Frontal Gyrus and Medial Frontal Gyrus) and limbic (mainly in the Anterior Cingulate Gyrus) lobes

  19. Sustained attention in skilled and novice martial arts athletes: a study of event-related potentials and current sources.

    PubMed

    Sanchez-Lopez, Javier; Silva-Pereyra, Juan; Fernandez, Thalia

    2016-01-01

    Background. Research on sports has revealed that behavioral responses and event-related brain potentials (ERP) are better in expert than in novice athletes for sport-related tasks. Focused attention is essential for optimal athletic performance across different sports but mainly in combat disciplines. During combat, long periods of focused attention (i.e., sustained attention) are required for a good performance. Few investigations have reported effects of expertise on brain electrical activity and its neural generators during sport-unrelated attention tasks. The aim of the present study was to assess the effect of expertise (i.e., skilled and novice martial arts athletes) analyzing the ERP during a sustained attention task (Continuous Performance Task; CPT) and the cortical three-dimensional distribution of current density, using the sLORETA technique. Methods. CPT consisted in an oddball-type paradigm presentation of five stimuli (different pointing arrows) where only one of them (an arrow pointing up right) required a motor response (i.e., target). CPT was administered to skilled and novice martial arts athletes while EEG were recorded. Amplitude ERP data from target and non-target stimuli were compared between groups. Subsequently, current source analysis for each ERP component was performed on each subject. sLORETA images were compared by condition and group using Statistical Non-Parametric Mapping analysis. Results. Skilled athletes showed significant amplitude differences between target and non-target conditions in early ERP components (P100 and P200) as opposed to the novice group; however, skilled athletes showed no significant effect of condition in N200 but novices did show a significant effect. Current source analysis showed greater differences in activations in skilled compared with novice athletes between conditions in the frontal (mainly in the Superior Frontal Gyrus and Medial Frontal Gyrus) and limbic (mainly in the Anterior Cingulate Gyrus) lobes

  20. Current Background Noise Sources and Levels in the NASA Ames 40- by 80-Foot Wind Tunnel: A Status Report

    NASA Technical Reports Server (NTRS)

    Allen, Christopher S.; Jaeger, Stephen; Soderman, Paul; Koga, Dennis (Technical Monitor)

    1999-01-01

    Background noise measurements were made of the acoustic environment in the National Full-Scale Aerodynamics Complex 40- by 80-Foot Wind Tunnel (40x80) at NASA Ames Research Center. The measurements were acquired subsequent to the 40x80 Aeroacoustic Modernization Project, which was undertaken to improve the anechoic characteristics of the 40x80's closed test section as well as reduce the levels of background noise in the facility. The resulting 40x80 anechoic environment was described by Soderman et. al., and the current paper describes the resulting 40x80 background noise, discusses the sources of the noise, and draws comparisons to previous 40x80 background noise levels measurements. At low wind speeds or low frequencies, the 40x80 background noise is dominated by the fan drive system. To obtain the lowest fan drive noise for a given tunnel condition, it is possible in the 40x80 to reduce the fans' rotational speed and adjust the fans' blade pitch, as described by Schmidtz et. al. This idea is not new, but has now been operationally implemented with modifications for increased power at low rotational speeds. At low to mid-frequencies and at higher wind speeds, the dominant noise mechanism was thought to be caused by the surface interface of the previous test section floor acoustic lining. In order to reduce this noise mechanism, the new test section floor lining was designed to resist the pumping of flow in and out of the space between the grating slats required to support heavy equipment. In addition, the lining/flow interface over the entire test section was designed to be smoother and quieter than the previous design. At high wind speeds or high frequencies, the dominant source of background noise in the 40x80 is believed to be caused by the response of the in-flow microphone probes (required by the nature of the closed test section) to the fluctuations in the freestream flow. The resulting background noise levels are also different for probes of various

  1. Improved CMOS field isolation using Germaniun/Boron implantation

    SciTech Connect

    Pfiester, J.R.; Alvis, J.R. )

    1988-08-01

    A novel germanium/boron implantation technique for improving the electrical field isolation for high-density CMOS circuits is demonstrated. Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage by as much as 40 percent with no significant degradation to junction or device performance. Selective germanium implantation with a blanket boron field implant can also improve the electrical field isolation behavior for CMOS circuits.

  2. CMOS front end electronics for the ATLAS muon detector

    SciTech Connect

    Huth, J.; Oliver, J.; Hazen, E.; Shank, J.

    1997-12-31

    An all-CMOS design for an integrated ASD (Amplifier-Shaper-Discriminator) chip for readout of the ATLAS Monitored Drift Tubes (MDTs) is presented. Eight channels of charge-sensitive preamp, two-stage pole/zero shaper, Wilkinson ADC and discriminator with programmable hysteresis are integrated on a single IC. Key elements have been prototyped in 1.2 and 0.5 micron CMOS operating at 5V and 3.3V respectively.

  3. Charge collection studies in irradiated HV-CMOS particle detectors

    NASA Astrophysics Data System (ADS)

    Affolder, A.; Andelković, M.; Arndt, K.; Bates, R.; Blue, A.; Bortoletto, D.; Buttar, C.; Caragiulo, P.; Cindro, V.; Das, D.; Dopke, J.; Dragone, A.; Ehrler, F.; Fadeyev, V.; Galloway, Z.; Gorišek, A.; Grabas, H.; Gregor, I. M.; Grenier, P.; Grillo, A.; Hommels, L. B. A.; Huffman, T.; John, J.; Kanisauskas, K.; Kenney, C.; Kramberger, G.; Liang, Z.; Mandić, I.; Maneuski, D.; McMahon, S.; Mikuž, M.; Muenstermann, D.; Nickerson, R.; Perić, I.; Phillips, P.; Plackett, R.; Rubbo, F.; Segal, J.; Seiden, A.; Shipsey, I.; Song, W.; Stanitzki, M.; Su, D.; Tamma, C.; Turchetta, R.; Vigani, L.; Volk, J.; Wang, R.; Warren, M.; Wilson, F.; Worm, S.; Xiu, Q.; Zavrtanik, M.; Zhang, J.; Zhu, H.

    2016-04-01

    Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.

  4. Advancement of CMOS Doping Technology in an External Development Framework

    NASA Astrophysics Data System (ADS)

    Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

    2011-01-01

    The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

  5. Surface enhanced biodetection on a CMOS biosensor chip

    NASA Astrophysics Data System (ADS)

    Belloni, Federico; Sandeau, Laure; Contié, Sylvain; Vicaire, Florence; Owens, Roisin; Rigneault, Hervé

    2012-03-01

    We present a rigorous electromagnetic theory of the electromagnetic power emitted by a dipole located in the vicinity of a multilayer stack. We applied this formalism to a luminescent molecule attached to a CMOS photodiode surface and report light collection efficiency larger than 80% toward the CMOS silicon substrate. We applied this result to the development of a low-cost, simple, portable device based on CMOS photodiodes technology for the detection and quantification of biological targets through light detection, presenting high sensitivity, multiplex ability, and fast data processing. The key feature of our approach is to perform the analytical test directly on the CMOS sensor surface, improving dramatically the optical detection of the molecule emitted light into the high refractive index semiconductor CMOS material. Based on adequate surface chemistry modifications, probe spotting and micro-fluidics, we performed proof-of-concept bio-assays directed against typical immuno-markers (TNF-α and IFN-γ). We compared the developed CMOS chip with a commercial micro-plate reader and found similar intrinsic sensitivities in the pg/ml range.

  6. Estimation of hyper-parameters for a hierarchical model of combined cortical and extra-brain current sources in the MEG inverse problem.

    PubMed

    Morishige, Ken-ichi; Yoshioka, Taku; Kawawaki, Dai; Hiroe, Nobuo; Sato, Masa-aki; Kawato, Mitsuo

    2014-11-01

    One of the major obstacles in estimating cortical currents from MEG signals is the disturbance caused by magnetic artifacts derived from extra-cortical current sources such as heartbeats and eye movements. To remove the effect of such extra-brain sources, we improved the hybrid hierarchical variational Bayesian method (hyVBED) proposed by Fujiwara et al. (NeuroImage, 2009). hyVBED simultaneously estimates cortical and extra-brain source currents by placing dipoles on cortical surfaces as well as extra-brain sources. This method requires EOG data for an EOG forward model that describes the relationship between eye dipoles and electric potentials. In contrast, our improved approach requires no EOG and less a priori knowledge about the current variance of extra-brain sources. We propose a new method, "extra-dipole," that optimally selects hyper-parameter values regarding current variances of the cortical surface and extra-brain source dipoles. With the selected parameter values, the cortical and extra-brain dipole currents were accurately estimated from the simulated MEG data. The performance of this method was demonstrated to be better than conventional approaches, such as principal component analysis and independent component analysis, which use only statistical properties of MEG signals. Furthermore, we applied our proposed method to measured MEG data during covert pursuit of a smoothly moving target and confirmed its effectiveness. PMID:25034620

  7. New interpretation of photonic yield processes (450-750nm) in multi-junction Si CMOS LEDs: simulation and analyses

    NASA Astrophysics Data System (ADS)

    Snyman, Lukas W.; Bellotti, Enrico

    2010-02-01

    Emission levels in the 450-750nm range of about 80-100 fold higher than that emitted by single junction avalanche LEDs, has been obtained. CMOS Si LED p+-i-np+ structures were modeled in order to investigate the effect of various depletion layer profiles and defect engineering on the photonic transitions in the 1.4 to 2.8 eV, 450-750nnm regime. Modeling and device simulation results showed that by utilizing a short lowly doped layer in between a highly doped p+ layer and n layer can enhance the photonic yields by orders of magnitude through an increase in the dynamic carrier densities in the device and favoring enhanced lateral multiplication processes. The electric field profile should be of the order of 5 x 105 V.cm-1 and about 0.5 micron long. Injecting of carriers of opposite charge type from an opposing forward bias junction further enhance the photonic yield. These models and interpretations is confirmed by analyses of device designs as realized in 1.2 μm and 0.35 CMOS technology. The device design involved normal CMOS design and processing procedures with no excessive micro-dimensioning. The current devices operated in the 8-10V, 1uA - 2mA regime and yield emission intensities of up to 100 nW.μm-2. The current emission levels are about three orders higher than the low frequency detectability limit of Si CMOS p-n detectors of corresponding area. The particular design favors higher emission levels towards the 750nm wavelength region. This makes diverse electro-optical applications possible such as optical communication on chip, diverse optical signal processing and wave-guiding. It also enables realization of on chip Micro-Optical-Electro-Mechanical Sensors (MOEMS), which could lead to the development of so-called "smart chips" utilizing standard CMOS integrated circuitry.

  8. Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

    NASA Technical Reports Server (NTRS)

    Bolton, Eric K.; Sayler, Gary S.; Nivens, David E.; Rochelle, James M.; Ripp, Steven; Simpson, Michael L.

    2002-01-01

    We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

  9. CMOS Image Sensor with a Built-in Lane Detector.

    PubMed

    Hsiao, Pei-Yung; Cheng, Hsien-Chein; Huang, Shih-Shinh; Fu, Li-Chen

    2009-01-01

    This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%. PMID:22573983

  10. CMOS Image Sensor with a Built-in Lane Detector.

    PubMed

    Hsiao, Pei-Yung; Cheng, Hsien-Chein; Huang, Shih-Shinh; Fu, Li-Chen

    2009-01-01

    This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%.

  11. A Radiation Hardened by Design CMOS ASIC for Thermopile Readouts

    NASA Technical Reports Server (NTRS)

    Quilligan, G.; Aslam, S.; DuMonthier, J.

    2012-01-01

    A radiation hardened by design (RHBD) mixed-signal application specific integrated circuit (ASIC) has been designed for a thermopile readout for operation in the harsh Jovian orbital environment. The multi-channel digitizer (MCD) ASIC includes 18 low noise amplifier channels which have tunable gain/filtering coefficients, a 16-bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The 18 channels, SDADC and controller were designed to operate with immunity to single event latchup (SEL) and to at least 10 Mrad total ionizing dose (TID). The ASIC also contains a radiation tolerant 16-bit 20 MHz Nyquist ADC for general purpose instrumentation digitizer needs. The ASIC is currently undergoing fabrication in a commercial 180 nm CMOS process. Although this ASIC was designed specifically for the harsh radiation environment of the NASA led JEO mission it is suitable for integration into instrumentation payloads 011 the ESA JUICE mission where the radiation hardness requirements are slightly less stringent.

  12. A global shutter CMOS image sensor for hyperspectral imaging

    NASA Astrophysics Data System (ADS)

    Stefanov, Konstantin D.; Dryer, Ben J.; Hall, David J.; Holland, Andrew D.; Pratlong, Jérôme; Fryer, Martin; Pike, Andrew

    2015-09-01

    Hyperspectral imaging has been providing vital information on the Earth landscape in response to the changing environment, land use and natural phenomena. While conventional hyperspectral imaging instruments have typically used rows of linescan CCDs, CMOS image sensors (CIS) have been slowly penetrating space instrumentation for the past decade, and Earth observation (EO) is no exception. CIS provide distinct advantages over CCDs that are relevant to EO hyperspectral imaging. The lack of charge transfer through the array allows the reduction of cross talk usually present in CCDs due to imperfect charge transfer efficiency, and random pixel addressing makes variable integration time possible, and thus improves the camera sensitivity and dynamic range. We have developed a 10T pixel design that integrates a pinned photodiode with global shutter and in-pixel correlated double sampling (CDS) to increase the signal to noise ratio in less intense spectral regimes, allowing for both high resolution and low noise hyperspectral imaging for EO. This paper details the characterization of a test device, providing baseline performance measurements of the array such as noise, responsivity, dark current and global shutter efficiency, and also discussing benchmark hyperspectral imaging requirements such as dynamic range, pixel crosstalk, and image lag.

  13. CMOS Image Sensor with a Built-in Lane Detector

    PubMed Central

    Hsiao, Pei-Yung; Cheng, Hsien-Chein; Huang, Shih-Shinh; Fu, Li-Chen

    2009-01-01

    This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%. PMID:22573983

  14. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Inverse computation for cardiac sources using single current dipole and current multipole models

    NASA Astrophysics Data System (ADS)

    Wang, Qian; Ma, Ping; Lu, Hong; Tang, Xue-Zheng; Hua, Ning; Tang, Fa-Kuan

    2009-12-01

    Two cardiac functional models are constructed in this paper. One is a single current model and the other is a current multipole model. Parameters denoting the properties of these two models are calculated by a least-square fit to the measurements using a simulated annealing algorithm. The measured signals are detected at 36 observation nodes by a superconducting quantum interference device (SQUID). By studying the trends of position, orientation and magnitude of the single current dipole model and the current multipole model in the QRS complex during one time span and comparing the reconstructed magnetocardiography (MCG) of these two cardiac models, we find that the current multipole model is a more appropriate model to represent cardiac electrophysiological activity.

  15. Particle detection and classification using commercial off the shelf CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Pérez, Martín; Lipovetzky, Jose; Sofo Haro, Miguel; Sidelnik, Iván; Blostein, Juan Jerónimo; Alcalde Bessia, Fabricio; Berisso, Mariano Gómez

    2016-08-01

    In this paper we analyse the response of two different Commercial Off The shelf CMOS image sensors as particle detectors. Sensors were irradiated using X-ray photons, gamma photons, beta particles and alpha particles from diverse sources. The amount of charge produced by different particles, and the size of the spot registered on the sensor are compared, and analysed by an algorithm to classify them. For a known incident energy spectrum, the employed sensors provide a dose resolution lower than microGray, showing their potentials in radioprotection, area monitoring, or medical applications.

  16. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

    PubMed Central

    Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

    2009-01-01

    We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed. PMID:22389592

  17. Reduction of CMOS Image Sensor Read Noise to Enable Photon Counting

    PubMed Central

    Guidash, Michael; Ma, Jiaju; Vogelsang, Thomas; Endsley, Jay

    2016-01-01

    Recent activity in photon counting CMOS image sensors (CIS) has been directed to reduction of read noise. Many approaches and methods have been reported. This work is focused on providing sub 1 e− read noise by design and operation of the binary and small signal readout of photon counting CIS. Compensation of transfer gate feed-through was used to provide substantially reduced CDS time and source follower (SF) bandwidth. SF read noise was reduced by a factor of 3 with this method. This method can be applied broadly to CIS devices to reduce the read noise for small signals to enable use as a photon counting sensor. PMID:27070625

  18. Distinguishing mechanisms of gamma frequency oscillations in human current source signals using a computational model of a laminar neocortical network

    PubMed Central

    Lee, Shane; Jones, Stephanie R.

    2013-01-01

    Gamma frequency rhythms have been implicated in numerous studies for their role in healthy and abnormal brain function. The frequency band has been described to encompass as broad a range as 30–150 Hz. Crucial to understanding the role of gamma in brain function is an identification of the underlying neural mechanisms, which is particularly difficult in the absence of invasive recordings in macroscopic human signals such as those from magnetoencephalography (MEG) and electroencephalography (EEG). Here, we studied features of current dipole (CD) signals from two distinct mechanisms of gamma generation, using a computational model of a laminar cortical circuit designed specifically to simulate CDs in a biophysically principled manner (Jones et al., 2007, 2009). We simulated spiking pyramidal interneuronal gamma (PING) whose period is regulated by the decay time constant of GABAA-mediated synaptic inhibition and also subthreshold gamma driven by gamma-periodic exogenous excitatory synaptic drive. Our model predicts distinguishable CD features created by spiking PING compared to subthreshold driven gamma that can help to disambiguate mechanisms of gamma oscillations in human signals. We found that gamma rhythms in neocortical layer 5 can obscure a simultaneous, independent gamma in layer 2/3. Further, we arrived at a novel interpretation of the origin of high gamma frequency rhythms (100–150 Hz), showing that they emerged from a specific temporal feature of CDs associated with single cycles of PING activity and did not reflect a separate rhythmic process. Last we show that the emergence of observable subthreshold gamma required highly coherent exogenous drive. Our results are the first to demonstrate features of gamma oscillations in human current source signals that distinguish cellular and circuit level mechanisms of these rhythms and may help to guide understanding of their functional role. PMID:24385958

  19. An Ultra-Low Voltage Analog Front End for Strain Gauge Sensory System Application in 0.18µm CMOS

    NASA Astrophysics Data System (ADS)

    Edward, Alexander; Chan, Pak Kwong

    This paper presents analysis and design of a new ultra-low voltage analog front end (AFE) dedicated to strain sensor applications. The AFE, designed in 0.18µm CMOS process, features a chopper-stabilized instrumentation amplifier (IA), a balanced active MOSFET-C 2nd order low pass filter (LPF), a clock generator and a voltage booster which operate at supply voltage (Vdd) of 0.6V. The designed IA achieves 30dB of closed-loop gain, 101dB of common-mode rejection ratio (CMRR) at 50Hz, 80dB of power-supply rejection ratio (PSRR) at 50Hz, thermal noise floor of 53.4 nV/√Hz, current consumption of 14µA, and noise efficiency factor (NEF) of 9.7. The high CMRR and rail-to-rail output swing capability is attributed to a new low voltage realization of the active-bootstrapped technique using a pseudo-differential gain-boosting operational transconductance amplifier (OTA) and proposed current-driven bulk (CDB) biasing technique. An output capacitor-less low-dropout regulator (LDO), with a new fast start-up LPF technique, is used to regulate this 0.6V supply from a 0.8-1.0V energy harvesting power source. It achieves power supply rejection (PSR) of 42dB at frequency of 1MHz. A cascode compensated pseudo differential amplifier is used as the filter's building block for low power design. The filter's single-ended-to-balanced converter is implemented using a new low voltage amplifier with two-stage common-mode cancellation. The overall AFE was simulated to have 65.6dB of signal-to-noise ratio (SNR), total harmonic distortion (THD) of less than 0.9% for a 100Hz sinusoidal maximum input signal, bandwidth of 2kHz, and power consumption of 51.2µW. Spectre RF simulations were performed to validate the design using BSIM3V3 transistor models provided by GLOBALFOUNDRIES 0.18µm CMOS process.

  20. Relationship Between Latchup And Transistor Current Gain

    NASA Technical Reports Server (NTRS)

    Edmonds, Larry D.

    1989-01-01

    Theoretical study takes new look at current-vs.-voltage behavior of silicon controlled rectifiers (SCR's), four-layer complementary metal oxide/semiconductor (CMOS) devices, and similar devices susceptible to latchup. For purposes of analysis, "latchup" denotes transition of such device from lower-current-conducting steady state to distinct higher-current-conducting steady state. Focuses upon conventional two-couple-transistor model of one-dimensional SCR. Although model gives oversimplified view of latchup in CMOS circuits, useful for qualitative predictions of electrical characteristics.

  1. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    NASA Astrophysics Data System (ADS)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  2. Development of a 750×750 pixels CMOS imager sensor for tracking applications

    NASA Astrophysics Data System (ADS)

    Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

    2004-06-01

    Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750×750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750×750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest... A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750×750 image sensor such as low power CMOS design (3.3V, power consumption <100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on

  3. On numerical simulation of high-speed CCD/CMOS-based wavefront sensors in adaptive optics

    NASA Astrophysics Data System (ADS)

    Konnik, Mikhail V.; Welsh, James Stuart

    2011-10-01

    Wavefront sensors, which use solid-state CCD or CMOS photosensors, are sources of errors in adaptive optic systems. Inaccuracy in the detection of wavefront distortions introduces considerable errors into wavefront reconstruction and leads to overall performance degradation of the adaptive optics system. The accuracy of wavefront sensors is significantly affected by photosensor noise. Thus, it is crucial to formulate high-level photosensor models that enable adaptive optic engineers to simulate realistic effects of noise from wavefront sensors. However, the complexity of solid-state photosensors and multiple noise sources makes it difficult to formulate an adequate model of the photosensor. Moreover, the characterisation of the simulated sensor and comparison with real hardware is often incomplete due to lack of comprehensive standards and guidelines. Owe to these difficulties, engineers work with oversimplified models of the wavefront sensors and consequently have imprecise numerical simulation results. The paper presents an approach for the modelling of noise sources for CCD and CMOS sensors that are used for wavefront sensing in adaptive optics. Both dark and light noise such as fixed pattern noise, photon shot noise, and read noises, as well as, charge-to-voltage noises are described. Procedures for characterisation of both light and dark noises of the simulated photosensors are provided. Numerical simulation results of a photosensor for a high-frame rate Shack-Hartmann wavefront sensor are presented.

  4. Simulation of SEU transients in CMOS ICs

    SciTech Connect

    Kaul, N.; Bhuva, B.L.; Kerns, S.E. )

    1991-12-01

    This paper reports that available analytical models of the number of single-event-induced errors (SEU) in combinational logic systems are not easily applicable to real integrated circuits (ICs). An efficient computer simulation algorithm set, SITA, predicts the vulnerability of data stored in and processed by complex combinational logic circuits to SEU. SITA is described in detail to allow researchers to incorporate it into their error analysis packages. Required simulation algorithms are based on approximate closed-form equations modeling individual device behavior in CMOS logic units. Device-level simulation is used to estimate the probability that ion-device interactions produce erroneous signals capable of propagating to a latch (or n output node), and logic-level simulation to predict the spread of such erroneous, latched information through the IC. Simulation results are compared to those from SPICE for several circuit and logic configurations. SITA results are comparable to this established circuit-level code, and SITA can analyze circuits with state-of-the-art device densities (which SPICE cannot). At all IC complexity levels, SITAS offers several factors of 10 savings in simulation time over SPICE.

  5. NSC 800, 8-bit CMOS microprocessor

    NASA Technical Reports Server (NTRS)

    Suszko, S. F.

    1984-01-01

    The NSC 800 is an 8-bit CMOS microprocessor manufactured by National Semiconductor Corp., Santa Clara, California. The 8-bit microprocessor chip with 40-pad pin-terminals has eight address buffers (A8-A15), eight data address -- I/O buffers (AD(sub 0)-AD(sub 7)), six interrupt controls and sixteen timing controls with a chip clock generator and an 8-bit dynamic RAM refresh circuit. The 22 internal registers have the capability of addressing 64K bytes of memory and 256 I/O devices. The chip is fabricated on N-type (100) silicon using self-aligned polysilicon gates and local oxidation process technology. The chip interconnect consists of four levels: Aluminum, Polysi 2, Polysi 1, and P(+) and N(+) diffusions. The four levels, except for contact interface, are isolated by interlevel oxide. The chip is packaged in a 40-pin dual-in-line (DIP), side brazed, hermetically sealed, ceramic package with a metal lid. The operating voltage for the device is 5 V. It is available in three operating temperature ranges: 0 to +70 C, -40 to +85 C, and -55 to +125 C. Two devices were submitted for product evaluation by F. Stott, MTS, JPL Microprocessor Specialist. The devices were pencil-marked and photographed for identification.

  6. Fully differential optoelectronic integrated receiver implemented by 0.35 μm standard CMOS process

    NASA Astrophysics Data System (ADS)

    Yu, Chang-Liang; Mao, Lu-Hong; Xiao, Xin-Dong; Xie, Sheng; Zhang, Shi-Lin

    2008-11-01

    A high-bandwidth, high-sensitivity fully differential optoelectronic integrated receiver is implemented in a chartered 3.3 V standard 0.35 μm analog CMOS process. To convert the incident light into a pair of fully differential photo-currents, a novel fully differential photodetector is proposed, which is composed of two completely identical photodiodes. The measurement results show that the receiver achieves a 1.11 GHz 3 dB bandwidth and a -13 dBm sensitivity for a 10-12 bit error at 1.5 Gb/s data rate under illumination by 850 nm incident lights.

  7. Sub-bandgap polysilicon photodetector in zero-change CMOS process for telecommunication wavelength.

    PubMed

    Meng, Huaiyu; Atabaki, Amir; Orcutt, Jason S; Ram, Rajeev J

    2015-12-14

    We report a defect state based guided-wave photoconductive detector at 1360-1630 nm telecommunication wavelength directly in standard microelectronics CMOS processes, with zero in-foundry process modification. The defect states in the polysilicon used to define a transistor gate assists light absorption. The body crystalline silicon helps form an inverse ridge waveguide to confine optical mode. The measured responsivity and dark current at 25 V forward bias are 0.34 A/W and 1.4 μA, respectively. The 3 dB bandwidth of the device is 1 GHz.

  8. Upset and latchup thresholds in CD-4000 series CMOS devices. IRT 4337-007

    SciTech Connect

    Harrity, J. W.; Gammill, P. E.

    1980-01-01

    A test program designed to verify that neutron irradiation and subsequent anneal is an effective method for suppressing ionization-induced latchup yielded as a byproduct a large body of data covering the upset and latchup thresholds of non-neutron-irradiated bulk CMOS devices. Sixty-six part types in the hardened RCA CD-4000 series and four National Semiconductor part types were tested. Upset levels ranged from 2-200 rad(Si). Latchup was observed in forty of the seventy part types tested. Latchup thresholds ranged from 9 to 708 rad(Si). Latchup currents ranged from 15 mA to 1.9 A.

  9. Characterization of plasma ion source utilizing anode spot with positively biased electrode for stable and high-current ion beam extraction

    SciTech Connect

    Park, Yeong-Shin; Lee, Yuna; Chung, Kyoung-Jae; Hwang, Y. S.

    2011-12-15

    The operating conditions of a rf plasma ion source utilizing a positively biased electrode have been investigated to develop a stably operating, high-current ion source. Ion beam characteristics such as currents and energies are measured and compared with bias currents by varying the bias voltages on the electrode immersed in the ambient rf plasma. Current-voltage curves of the bias electrode and photographs confirm that a small and dense plasma, so-called anode spot, is formed near an extraction aperture and plays a key role to enhance the performance of the plasma ion source. The ion beam currents from the anode spot are observed to be maximized at the optimum bias voltage near the knee of the characteristic current-voltage curve of the anode spot. Increased potential barrier to obstruct beam extraction is the reason for the reduction of the ion beam current in spite of the increased bias current indicating the density of the anode spot. The optimum bias voltage is measured to be lower at higher operating pressure, which is favorable for stable operation without severe sputtering damage on the electrode. The ion beam current can be further enhanced by increasing the power for the ambient plasma without increasing the bias voltage. In the same manner, noble gases with higher atomic number as a feedstock gas are preferable for extracting higher beam current more stably. Therefore, performance of the plasma ion source with a positively biased electrode can be enhanced by controlling the operating conditions of the anode spot in various manners.

  10. CMOS Imaging Sensor Technology for Aerial Mapping Cameras

    NASA Astrophysics Data System (ADS)

    Neumann, Klaus; Welzenbach, Martin; Timm, Martin

    2016-06-01

    In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

  11. Design and Fabrication of Vertically-Integrated CMOS Image Sensors

    PubMed Central

    Skorka, Orit; Joseph, Dileepan

    2011-01-01

    Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

  12. Development and characterization of CMOS avalanche photodiode arrays

    NASA Astrophysics Data System (ADS)

    Lawrence, William G.; Christian, James F.; Augustine, Frank L.; Squillante, Michael R.; Entine, Gerald

    2005-04-01

    Avalanche photodiode (APD) arrays fabricated by using complementary metal-oxide-semiconductor (CMOS) fabrication technology offer the possibility of combining these high sensitivity detectors with cost effective, on-board, complementary circuitry. Using CMOS techniques, Radiation Monitoring Devices has developed prototype pixels with active diameters ranging from 5 to 60 microns and with measured quantum efficiencies of up to 65%. The prototype CMOS APD pixel designs support both proportional and Geiger modes of photo-detection. When operating in Geiger mode, these APD"s act as single-optical-photon-counting detectors that can be used for time-resolved measurements under signal-starved conditions. We have also designed and fabricated CMOS chips that contain not only the APD pixels, but also associated circuitry for both actively and passively quenching the self-propagating Geiger avalanche. This report presents the noise and timing performance for the prototype CMOS APD pixels in both the proportional and Geiger modes of operation. It compares the quantum efficiency and dark-count rate of different pixel designs as a function of the applied bias and presents a discussion of the maximum count rates that is obtained with each of the two types of quenching circuits for operating the pixel in Geiger mode. Preliminary data on the application of the APD pixels to laser ranging and fluorescent lifetime measurement is also presented.

  13. Improved Space Object Observation Techniques Using CMOS Detectors

    NASA Astrophysics Data System (ADS)

    Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

    2013-08-01

    CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

  14. Radiation tolerant back biased CMOS VLSI

    NASA Technical Reports Server (NTRS)

    Maki, Gary K. (Inventor); Gambles, Jody W. (Inventor); Hass, Kenneth J. (Inventor)

    2003-01-01

    A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power.

  15. Radiofrequency current source (RFCS) drive and decoupling technique for parallel transmit arrays using a high-power metal oxide semiconductor field-effect transistor (MOSFET).

    PubMed

    Lee, Wonje; Boskamp, Eddy; Grist, Thomas; Kurpad, Krishna

    2009-07-01

    A radiofrequency current source (RFCS) design using a high-power metal oxide semiconductor field effect transistor (MOSFET) that enables independent current control for parallel transmit applications is presented. The design of an RFCS integrated with a series tuned transmitting loop and its associated control circuitry is described. The current source is operated in a gated class AB push-pull configuration for linear operation at high efficiency. The pulsed RF current amplitude driven into the low impedance transmitting loop was found to be relatively insensitive to the various loaded loop impedances ranging from 0.4 to 10.3 ohms, confirming current mode operation. The suppression of current induced by a neighboring loop was quantified as a function of center-to-center loop distance, and was measured to be 17 dB for nonoverlapping, adjacent loops. Deterministic manipulation of the B(1) field pattern was demonstrated by the independent control of RF phase and amplitude in a head-sized two-channel volume transmit array. It was found that a high-voltage rated RF power MOSFET with a minimum load resistance, exhibits current source behavior, which aids in transmit array design.

  16. Radiofrequency current source (RFCS) drive and decoupling technique for parallel transmit arrays using a high-power metal oxide semiconductor field-effect transistor (MOSFET).

    PubMed

    Lee, Wonje; Boskamp, Eddy; Grist, Thomas; Kurpad, Krishna

    2009-07-01

    A radiofrequency current source (RFCS) design using a high-power metal oxide semiconductor field effect transistor (MOSFET) that enables independent current control for parallel transmit applications is presented. The design of an RFCS integrated with a series tuned transmitting loop and its associated control circuitry is described. The current source is operated in a gated class AB push-pull configuration for linear operation at high efficiency. The pulsed RF current amplitude driven into the low impedance transmitting loop was found to be relatively insensitive to the various loaded loop impedances ranging from 0.4 to 10.3 ohms, confirming current mode operation. The suppression of current induced by a neighboring loop was quantified as a function of center-to-center loop distance, and was measured to be 17 dB for nonoverlapping, adjacent loops. Deterministic manipulation of the B(1) field pattern was demonstrated by the independent control of RF phase and amplitude in a head-sized two-channel volume transmit array. It was found that a high-voltage rated RF power MOSFET with a minimum load resistance, exhibits current source behavior, which aids in transmit array design. PMID:19353658

  17. CMOS BDJ photodiode for trichromatic sensing

    NASA Astrophysics Data System (ADS)

    Tu, Lien; Setlur Nagesh, S. V.; Fu, ZhenHong; Titus, Albert H.

    2012-03-01

    A novel method for achieving trichromatic color detection using a single photodetector with less than three p-n junctions is presented. This new method removes the constraints of color sensing in buried-double-junction (BDJ) photodiode, eliminates the need for a priori light source knowledge or for changing color intensity. After using a single visible light optical filter to block irradiance external of visible spectrum, the color detection is achieved by taking the difference in depletion region photocurrent generated by different reverse bias voltages. This "difference output" effectively forms the "third" optical wavelength specific depletion region required for trichromatic color sensing. This method is based on exploiting the relationship between photon absorption and photon penetration depth of silicon, and the basic property of p-n junction photodiode which states that only photons absorbed within depletion region generate current. The theory is validated experimentally using BDJ photodiodes fabricated through MOSIS Inc. in the AMI-ABN 1.5um technology and ON-SEMI 0.5um technology. A commercial p-i-n photodiode is also being investigated for contrast and comparison.

  18. A CMOS humidity sensor for passive RFID sensing applications.

    PubMed

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-01-01

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

  19. Fabrication of the planar angular rotator using the CMOS process

    NASA Astrophysics Data System (ADS)

    Dai, Ching-Liang; Chang, Chien-Liu; Chen, Hung-Lin; Chang, Pei-Zen

    2002-05-01

    In this investigation we propose a novel planar angular rotator fabricated by the conventional complementary metal-oxide semiconductor (CMOS) process. Following the 0.6 μm single poly triple metal (SPTM) CMOS process, the device is completed by a simple maskless, post-process etching step. The rotor of the planar angular rotator rotates around its geometric center with electrostatic actuation. The proposed design adopts an intelligent mechanism including the slider-crank system to permit simultaneous motion. The CMOS planar angular rotator could be driven with driving voltages of around 40 V. The design proposed here has a shorter response time and longer life, without problems of friction and wear, compared to the more common planar angular micromotor.

  20. Scaling CMOS photonics transceivers beyond 100 Gb/s

    NASA Astrophysics Data System (ADS)

    Mekis, Attila; Abdalla, Sherif; De Dobbelaere, Peter M.; Foltz, Dennis; Gloeckner, Steffen; Hovey, Steven; Jackson, Steven; Liang, Yi; Mack, Michael; Masini, Gianlorenzo; Novais, Rafaela; Peterson, Mark; Pinguet, Thierry; Sahni, Subal; Schramm, Jeff; Sharp, Michael; Song, Daniel; Welch, Brian P.; Yokoyama, Kosei; Yu, Shuhuan

    2012-01-01

    We report on the performance of an integrated four-channel parallel optical transceiver built in a CMOS photonics process, operating at 28 Gb/s per channel. The optical engine of the transceiver comprises a single silicon die and a hybrid integrated DFB laser. The silicon die contains the all functionalities needed for an optical transceiver: transmitter and receiver optics, electrical driver, receiver and control circuits. We also describe the CMOS photonics platform used to build such transceiver device, which consists of: an optically enabled CMOS process, a photonic device library, and a design infrastructure that is modeled after standard circuit design tools. We discuss how this platform can scale to higher speeds and channel counts.