Design and Test of a 65nm CMOS Front-End with Zero Dead Time for Next Generation Pixel Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaioni, L.; Braga, D.; Christian, D.

This work is concerned with the experimental characterization of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier with detector leakage compensation circuit, and a compact, single ended comparator able to correctly process hits belonging to two consecutive bunch crossing periods. A 2-bit Flash ADC is exploited for digital conversion immediately after the preamplifier. A description of the circuits integrated in the front-end processor and the initial characterization results are provided

Front-end receiver electronics for high-frequency monolithic CMUT-on-CMOS imaging arrays.

PubMed

Gurun, Gokce; Hasler, Paul; Degertekin, F

2011-08-01

This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for highfrequency intravascular ultrasound imaging. A custom 8-inch (20-cm) wafer is fabricated in a 0.35-μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range, and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input-referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulseecho measurement. Transducer-noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 to 20 MHz.

A 0.18 μm biosensor front-end based on 1/f noise, distortion cancelation and chopper stabilization techniques.

PubMed

Balasubramanian, Viswanathan; Ruedi, Pierre-Francois; Temiz, Yuksel; Ferretti, Anna; Guiducci, Carlotta; Enz

2013-10-01

This paper presents a novel sensor front-end circuit that addresses the issues of 1/f noise and distortion in a unique way by using canceling techniques. The proposed front-end is a fully differential transimpedance amplifier (TIA) targeted for current mode electrochemical biosensing applications. In this paper, we discuss the architecture of this canceling based front-end and the optimization methods followed for achieving low noise, low distortion performance at minimum current consumption are presented. To validate the employed canceling based front-end, it has been realized in a 0.18 μm CMOS process and the characterization results are presented. The front-end has also been tested as part of a complete wireless sensing system and the cyclic voltammetry (CV) test results from electrochemical sensors are provided. Overall current consumption in the front-end is 50 μA while operating on a 1.8 V supply.

Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

NASA Technical Reports Server (NTRS)

Bolton, Eric K.; Sayler, Gary S.; Nivens, David E.; Rochelle, James M.; Ripp, Steven; Simpson, Michael L.

2002-01-01

We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

A Low-Power CMOS Front-End for Photoplethysmographic Signal Acquisition With Robust DC Photocurrent Rejection.

PubMed

Wong, A K Y; Kong-Pang Pun; Yuan-Ting Zhang; Ka Nang Leung

2008-12-01

A micro-power CMOS front-end, consisting of a transimpedance amplifier (TIA) and an ultralow cutoff frequency lowpass filter for the acquisition of photoplethysmographic signal (PPG) is presented. Robust DC photocurrent rejection for the pulsed signal source is achieved through a sample-and-hold stage in the feed-forward signal path and an error amplifier in the feedback path. Ultra-low cutoff frequency of the filter is achieved with a proposed technique that incorporates a pair of current-steering transistors that increases the effective filter capacitance. The design was realized in a 0.35-mum CMOS technology. It consumes 600 muW at 2.5 V, rejects DC photocurrent ranged from 100 nA to 53.6 muA, and achieves lower-band and upper-band - 3-dB cutoff frequencies of 0.46 and 2.8 Hz, respectively.

MEDUSA-32: A low noise, low power silicon strip detector front-end electronics, for space applications

NASA Astrophysics Data System (ADS)

Cicuttin, Andres; Colavita, Alberto; Cerdeira, Alberto; Fratnik, Fabio; Vacchi, Andrea

1997-02-01

In this report we describe a mixed analog-digital integrated circuit (IC) designed as the front-end electronics for silicon strip-detectors for space applications. In space power consumption, compactness and robustness become critical constraints for a pre-amplifier design. The IC is a prototype with 32 complete channels, and it is intended for a large area particle tracker of a new generation of gamma ray telescopes. Each channel contains a charge sensitive amplifier, a pulse shaper, a discriminator and two digital buffers. The reference trip point of the discriminator is adjustable. This chip also has a custom PMOSFET transistor per channel, included in order to provide the high dynamic resistance needed to reverse-bias the strip diode. The digital part of the chip is used to store and serially shift out the state of the channels. There is also a storage buffer that allows the disabling of non-functioning channels if it is required by the data acquisition system. An input capacitance of 30 pF introduced at the input of the front-end produces less than 1000 electrons of RMS equivalent noise charge (ENC), for a total power dissipation of only 60 μW per channel. The chip was made using Orbit's 1.2 μm double poly, double metal n-well low noise CMOS process. The dimensions of the IC are 2400 μm × 8840 μm.

A SAR-ADC using unit bridge capacitor and with calibration for the front-end electronics of PET imaging

NASA Astrophysics Data System (ADS)

Liu, Wei; Wei, Tingcun; Li, Bo; Yang, Lifeng; Xue, Feifei; Hu, Yongcai

2016-05-01

This paper presents a 12-bit 1 MS/s successive approximation register-analog to digital converter (SAR-ADC) for the 32-channel front-end electronics of CZT-based PET imaging system. To reduce the capacitance mismatch, instead of the fractional capacitor, the unit capacitor is used as the bridge capacitor in the split-capacitor digital to analog converter (DAC) circuit. In addition, in order to eliminate the periodical DNL errors of -1 LSB which often exists in the SAR-ADC using the charge-redistributed DAC, a calibration algorithm is proposed and verified by the experiments. The proposed 12-bit 1 MS/s SAR-ADC is designed and implemented using a 0.35 μm CMOS technology, it occupies only an active area of 986×956 μm2. The measurement results show that, at the power supply of 3.3/5.0 V and the sampling rate of 1 MS/s, the ADC with calibration has a signal-to-noise-and-distortion ratio (SINAD) of 67.98 dB, the power dissipation of 5 mW, and a figure of merit (FOM) of 2.44 pJ/conv.-step. This ADC is with the features of high accuracy, low power and small layout area, it is especially suitable to the one-chip integration of the front-end readout electronics.

Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade

NASA Astrophysics Data System (ADS)

Kim, D.; Aglieri Rinella, G.; Cavicchioli, C.; Chanlek, N.; Collu, A.; Degerli, Y.; Dorokhov, A.; Flouzat, C.; Gajanana, D.; Gao, C.; Guilloux, F.; Hillemanns, H.; Hristozkov, S.; Junique, A.; Keil, M.; Kofarago, M.; Kugathasan, T.; Kwon, Y.; Lattuca, A.; Mager, M.; Sielewicz, K. M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Pham, T. H.; Puggioni, C.; Reidt, F.; Riedler, P.; Rousset, J.; Siddhanta, S.; Snoeys, W.; Song, M.; Usai, G.; Van Hoorne, J. W.; Yang, P.

2016-02-01

ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m2 tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. First full-scale prototypes have been fabricated and tested. Radiation tolerance has also been verified. In this paper the development of the charge sensitive front end and in particular its optimization for uniformity of charge threshold and time response will be presented.

Performance evaluation of the analogue front-end and ADC prototypes for the Gotthard-II development

NASA Astrophysics Data System (ADS)

Zhang, J.; Andrä, M.; Barten, R.; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Redford, S.; Ruat, M.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Turcato, M.; Vetter, S.

2017-12-01

Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a silicon microstrip sensor with a pitch of 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to readout chips (ROCs). In the ROC, an adaptive gain switching pre-amplifier (PRE), a fully differential Correlated-Double-Sampling (CDS) stage, an Analog-to-Digital Converter (ADC) as well as a Static Random-Access Memory (SRAM) capable of storing all the 2700 images in an XFEL.EU bunch train will be implemented. Several prototypes with different designs of the analogue front-end (PRE and CDS) and ADC test structures have been fabricated in UMC-110 nm CMOS technology and their performance has been evaluated. In this paper, the performance of the analogue front-end and ADC will be summarized.

Low-power analog integrated circuits for wireless ECG acquisition systems.

PubMed

Tsai, Tsung-Heng; Hong, Jia-Hua; Wang, Liang-Hung; Lee, Shuenn-Yuh

2012-09-01

This paper presents low-power analog ICs for wireless ECG acquisition systems. Considering the power-efficient communication in the body sensor network, the required low-power analog ICs are developed for a healthcare system through miniaturization and system integration. To acquire the ECG signal, a low-power analog front-end system, including an ECG signal acquisition board, an on-chip low-pass filter, and an on-chip successive-approximation analog-to-digital converter for portable ECG detection devices is presented. A quadrature CMOS voltage-controlled oscillator and a 2.4 GHz direct-conversion transmitter with a power amplifier and upconversion mixer are also developed to transmit the ECG signal through wireless communication. In the receiver, a 2.4 GHz fully integrated CMOS RF front end with a low-noise amplifier, differential power splitter, and quadrature mixer based on current-reused folded architecture is proposed. The circuits have been implemented to meet the specifications of the IEEE 802.15.4 2.4 GHz standard. The low-power ICs of the wireless ECG acquisition systems have been fabricated using a 0.18 μm Taiwan Semiconductor Manufacturing Company (TSMC) CMOS standard process. The measured results on the human body reveal that ECG signals can be acquired effectively by the proposed low-power analog front-end ICs.

A CMOS Low-Power Optical Front-End for 5 Gbps Applications

NASA Astrophysics Data System (ADS)

Zohoori, Soorena; Dolatshahi, Mehdi

2018-01-01

In this paper, a new low-power optical receiver front-end is proposed in 90 nm CMOS technology for 5 Gb/s AApplications. However, to improve the gain-bandwidth trade-off, the proposed Trans-Impedance Amplifier (TIA) uses an active modified inverter-based topology followed by a common-source amplifier, which uses active inductive peaking technique to enhance the frequency bandwidth in an increased gain level for a reasonable power consumption value. The proposed TIA is analyzed and simulated in HSPICE using 90 nm CMOS technology parameters. Simulation results show a 53.5dBΩ trans-impedance gain, 3.5 GHz frequency bandwidth, 16.8pA/√Hz input referred noise, and 1.28 mW of power consumption at 1V supply voltage. The Optical receiver is completed using three stages of differential limiting amplifiers (LAs), which provide 27 dB voltage gain while consume 3.1 mW of power. Finally, the whole optical receiver front-end consumes only 5.6 mW of power at 1 V supply and amplifies the input signal by 80 dB, while providing 3.7 GHz of frequency bandwidth. Finally, the simulation results indicate that the proposed optical receiver is a proper candidate to be used in a low-power 5 Gbps optical communication system.

Towards on-chip integration of brain imaging photodetectors using standard CMOS process.

PubMed

Kamrani, Ehsan; Lesage, Frederic; Sawan, Mohamad

2013-01-01

The main effects of on-chip integration on the performance and efficiency of silicon avalanche photodiode (SiAPD) and photodetector front-end is addressed in this paper based on the simulation and fabrication experiments. Two different silicon APDs are fabricated separately and also integrated with a transimpedance amplifier (TIA) front-end using standard CMOS technology. SiAPDs are designed in p+/n-well structure with guard rings realized in different shapes. The TIA front-end has been designed using distributed-gain concept combined with resistive-feedback and common-gate topology to reach low-noise and high gain-bandwidth product (GBW) characteristics. The integrated SiAPDs show higher signal-to-noise ratio (SNR), sensitivity and detection efficiency comparing to the separate SiAPDs. The integration does not show a significant effect on the gain and preserves the low power consumption. Using APDs with p-well guard-ring is preferred due to the higher observed efficiency after integration.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demaria, N.

This paper is a review of recent progress of RD53 Collaboration. Results obtained on the study of the radiation effects on 65 nm CMOS have matured enough to define first strategies to adopt in the design of analog and digital circuits. Critical building blocks and analog very front end chains have been designed, tested before and after 5–800 Mrad. Small prototypes of 64×64 pixels with complex digital architectures have been produced, and point to address the main issues of dealing with extremely high pixel rates, while operating at very small in-time thresholds in the analog front end. Lastly, the collaborationmore » is now proceeding at full speed towards the design of a large scale prototype, called RD53A, in 65 nm CMOS technology.« less

Programming time-multiplexed reconfigurable hardware using a scalable neuromorphic compiler.

PubMed

Minkovich, Kirill; Srinivasa, Narayan; Cruz-Albrecht, Jose M; Cho, Youngkwan; Nogin, Aleksey

2012-06-01

Scalability and connectivity are two key challenges in designing neuromorphic hardware that can match biological levels. In this paper, we describe a neuromorphic system architecture design that addresses an approach to meet these challenges using traditional complementary metal-oxide-semiconductor (CMOS) hardware. A key requirement in realizing such neural architectures in hardware is the ability to automatically configure the hardware to emulate any neural architecture or model. The focus for this paper is to describe the details of such a programmable front-end. This programmable front-end is composed of a neuromorphic compiler and a digital memory, and is designed based on the concept of synaptic time-multiplexing (STM). The neuromorphic compiler automatically translates any given neural architecture to hardware switch states and these states are stored in digital memory to enable desired neural architectures. STM enables our proposed architecture to address scalability and connectivity using traditional CMOS hardware. We describe the details of the proposed design and the programmable front-end, and provide examples to illustrate its capabilities. We also provide perspectives for future extensions and potential applications.

Front-end receiver electronics for a matrix transducer for 3-D transesophageal echocardiography.

PubMed

Yu, Zili; Blaak, Sandra; Chang, Zu-yao; Yao, Jiajian; Bosch, Johan G; Prins, Christian; Lancée, Charles T; de Jong, Nico; Pertijs, Michiel A P; Meijer, Gerard C M

2012-07-01

There is a clear clinical need for creating 3-D images of the heart. One promising technique is the use of transesophageal echocardiography (TEE). To enable 3-D TEE, we are developing a miniature ultrasound probe containing a matrix piezoelectric transducer with more than 2000 elements. Because a gastroscopic tube cannot accommodate the cables needed to connect all transducer elements directly to an imaging system, a major challenge is to locally reduce the number of channels, while maintaining a sufficient signal-to-noise ratio. This can be achieved by using front-end receiver electronics bonded to the transducers to provide appropriate signal conditioning in the tip of the probe. This paper presents the design of such electronics, realizing time-gain compensation (TGC) and micro-beamforming using simple, low-power circuits. Prototypes of TGC amplifiers and micro-beamforming cells have been fabricated in 0.35-μm CMOS technology. These prototype chips have been combined on a printed circuit board (PCB) to form an ultrasound-receiver system capable of reading and combining the signals of three transducer elements. Experimental results show that this design is a suitable candidate for 3-D TEE.

Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application

NASA Astrophysics Data System (ADS)

Suganthi, K.; Malarvizhi, S.

2018-03-01

A high gain, low power, low Noise figure (NF) and wide band of milli-meter Wave (mmW) circuits design at 50 GHz are used for Radio Frequency (RF) front end. The fundamental necessity of a receiver front-end includes perfect output and input impedance matching and port-to-port isolation with high gain and low noise over the entire band of interest. In this paper, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed. The design of Low noise amplifier at 50 GHz using Agilent ADS tool with microstrip lines which provides simplicity in fabrication and less chip area. The low off-leakage current Ioff can be maintained with high K-dielectrics CMOS structure. Nano-scale electronics can be achieved with increased robustness. The design has overall gain of 11.091 dB and noise figure of 2.673 dB for the Q-band of 48.3 GHz to 51.3 GHz. Impedance matching is done by T matching network and the obtained input and output reflection coefficients are S11 = <-10 dB and S22 = <-10 dB. Compared to Silicon (Si) material, Wide Band Gap semiconductor materials used attains higher junction temperatures which is well matched to ceramics used in packaging technology, the protection and reliability also can be achieved with the electronic packaging. The reverse transmission coefficient S21 is less than -21 dB has shown that LNA has better isolation between input and output, Stability factor greater than 1 and Power is also optimized in this design. Layout is designed, power gain of 4.6 dB is achieved and area is optimized which is nearly equal to 502 740 μm2. The observed results show that the proposed Cascade-Cascode LNA design can find its suitability in future milli-meter Wave Radar application.

A reconfigurable medically cohesive biomedical front-end with ΣΔ ADC in 0.18µm CMOS.

PubMed

Jha, Pankaj; Patra, Pravanjan; Naik, Jairaj; Acharya, Amit; Rajalakshmi, P; Singh, Shiv Govind; Dutta, Ashudeb

2015-08-01

This paper presents a generic programmable analog front-end (AFE) for acquisition and digitization of various biopotential signals. This includes a lead-off detection circuit, an ultra-low current capacitively coupled signal conditioning stage with programmable gain and bandwidth, a new mixed signal automatic gain control (AGC) mechanism and a medically cohesive reconfigurable ΣΔ ADC. The full system is designed in UMC 0.18μm CMOS. The AFE achieves an overall linearity of more 10 bits with 0.47μW power consumption. The ADC provides 2(nd) order noise-shaping while using single integrator and an ENOB of ~11 bits with 5μW power consumption. The system was successfully verified for various ECG signals from PTB database. This system is intended for portable batteryless u-Healthcare devices.

Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC

DOE PAGES

Demaria, N.

2016-12-21

This paper is a review of recent progress of RD53 Collaboration. Results obtained on the study of the radiation effects on 65 nm CMOS have matured enough to define first strategies to adopt in the design of analog and digital circuits. Critical building blocks and analog very front end chains have been designed, tested before and after 5–800 Mrad. Small prototypes of 64×64 pixels with complex digital architectures have been produced, and point to address the main issues of dealing with extremely high pixel rates, while operating at very small in-time thresholds in the analog front end. Lastly, the collaborationmore » is now proceeding at full speed towards the design of a large scale prototype, called RD53A, in 65 nm CMOS technology.« less

The design of CMOS general-purpose analog front-end circuit with tunable gain and bandwidth for biopotential signal recording systems.

PubMed

Chen, Wei-Ming; Yang, Wen-Chia; Tsai, Tzung-Yun; Chiueh, Herming; Wu, Chung-Yu

2011-01-01

In this paper an 8-channel CMOS general-purpose analog front-end (AFE) circuit with tunable gain and bandwidth for biopotential signal recording systems is presented. The proposed AFE consists of eight chopper stabilized pre-amplifiers, an 8-to-1 analog multiplexer, and a programmable gain amplifier. It can be used to sense and amplify different kinds of biopotential signals, such as electrocorticogram (ECoG), electrocardiogram (ECG) and electromyogram (EMG). The AFE chip is designed and fabricated in 0.18-μm CMOS technology. The measured maximum gain of AFE is 60.8 dB. The low cutoff frequency can achieve as low as 0.8 Hz and high cutoff frequency can be adjusted from 200 Hz to 10 kHz to suit for different kinds of biopotential signals. The measured input-referred noise is 0.9 μV(rms), with the power consumption of 18μW per channel at 1.8-V power supply. And the noise efficiency factor (NEF) is only 1.3 for pre-amplifier.

An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS

NASA Astrophysics Data System (ADS)

Yanbin, Luo; Chengyan, Ma; Yebing, Gan; Min, Qian; Tianchun, Ye

2015-10-01

An inductorless multi-mode RF front end for a global navigation satellite system (GNSS) receiver is presented. Unlike the traditional topology of a low noise amplifier (LNA), the inductorless current-mode noise-canceling LNA is applied in this design. The high-impedance-input radio frequency amplifier (RFA) further amplifies the GNSS signals and changes the single-end signal path into fully differential. The passive mixer down-converts the signals to the intermediate frequency (IF) band and conveys the signals to the analogue blocks. The local oscillator (LO) buffer divides the output frequency of the voltage controlled oscillator (VCO) and generates 25%-duty-cycle quadrature square waves to drive the mixer. Our measurement results display that the implemented RF front end achieves good overall performance while consuming only 6.7 mA from 1.2 V supply. The input return loss is better than -26 dB and the ultra low noise figure of 1.43 dB leads to high sensitivity of the GNSS receiver. The input 1 dB compression point is -43 dBm at the high gain of 48 dB. The designed circuit is fabricated in 55 nm CMOS technology and the die area, which is much smaller than traditional circuit, is around 220 × 280 μm2.

Dedicated multichannel readout ASIC coupled with single crystal diamond for dosimeter application

NASA Astrophysics Data System (ADS)

Fabbri, A.; Falco, M. D.; De Notaristefani, F.; Galasso, M.; Marinelli, M.; Orsolini Cencelli, V.; Tortora, L.; Verona, C.; Verona Rinati, G.

2013-02-01

This paper reports on the tests of a low-noise, multi-channel readout integrated circuit used as a readout electronic front-end for a diamond multi-pixel dosimeter. The system is developed for dose distribution measurement in radiotherapy applications. The first 10-channel prototype chip was designed and fabricated in a 0.18 um CMOS process. Every channel includes a charge integrator with a 10 pF capacitor and a double slope A/D converter. The diamond multi-pixel detector, based on CVD synthetic single crystal diamond Schottky diodes, is made by a 3 × 3 sensor matrix. The overall device has been tested under irradiation with 6 MeV radio therapeutic photon beams at the Policlinico ``Tor Vergata'' (PTV) hospital. Measurements show a 20 fA RMS leakage current from the front-end input stage and a negligible dark current from the diamond detector, a stable temporal response and a good linear behaviour as a function of both dose and dose rate. These characteristics were common to each tested channel.

A low power low noise analog front end for portable healthcare system

NASA Astrophysics Data System (ADS)

Yanchao, Wang; Keren, Ke; Wenhui, Qin; Yajie, Qin; Ting, Yi; Zhiliang, Hong

2015-10-01

The presented analog front end (AFE) used to process human bio-signals consists of chopping instrument amplifier (IA), chopping spikes filter and programmable gain and bandwidth amplifier. The capacitor-coupling input of AFE can reject the DC electrode offset. The power consumption of current-feedback based IA is reduced by adopting capacitor divider in the input and feedback network. Besides, IA's input thermal noise is decreased by utilizing complementary CMOS input pairs which can offer higher transconductance. Fabricated in Global Foundry 0.35 μm CMOS technology, the chip consumes 3.96 μA from 3.3 V supply. The measured input noise is 0.85 μVrms (0.5-100 Hz) and the achieved noise efficient factor is 6.48. Project supported by the Science and Technology Commission of Shanghai Municipality (No. 13511501100), the State Key Laboratory Project of China (No. 11MS002), and the State Key Laboratory of ASIC & System, Fudan University.

Characteristics of a multichannel low-noise front-end ASIC for CZT-based small animal PET imaging

NASA Astrophysics Data System (ADS)

Gao, W.; Liu, H.; Gan, B.; Hu, Y.

2014-05-01

In this paper, we present the design and characteristics of a novel low-noise front-end readout application-specific integrated circuit dedicated to CdZnTe (CZT) detectors for a small animal PET imaging system. A low-noise readout method based on the charge integration and the delayed peak detection is proposed. An eight-channel front-end readout prototype chip is designed and implemented in a 0.35 μm CMOS process. The die size is 2.3 mm ×2.3 mm. The prototype chip is tested in different methods including electronic test, energy spectrum test and irradiation test. The input range of the ASIC is from 2000e- to 180,000e-, reflecting the energy of the gamma ray from 11.2 keV to 1 MeV. The gain of the readout channel is 65 mV/fC at the shaping time of 1 μs. The best test result of the equivalent noise charge (ENC) is 58.9 e- at zero farad plus 5.4 e- per picofarad. The nonlinearity and the crosstalk are less than 3% and less than 2%, respectively, at the room temperature. The static power dissipation is about 3 mW/channel.

Architecture of a general purpose embedded Slow-Control Adapter ASIC for future high-energy physics experiments

NASA Astrophysics Data System (ADS)

Gabrielli, Alessandro; Loddo, Flavio; Ranieri, Antonio; De Robertis, Giuseppe

2008-10-01

This work is aimed at defining the architecture of a new digital ASIC, namely Slow-Control Adapter (SCA), which will be designed in a commercial 130-nm CMOS technology. This chip will be embedded within a high-speed data acquisition optical link (GBT) to control and monitor the front-end electronics in future high-energy physics experiments. The GBT link provides a transparent transport layer between the SCA and control electronics in the counting room. The proposed SCA supports a variety of common bus protocols to interface with end-user general-purpose electronics. Between the GBT and the SCA a standard 100 Mb/s IEEE-802.3 compatible protocol will be implemented. This standard protocol allows off-line tests of the prototypes using commercial components that support the same standard. The project is justified because embedded applications in modern large HEP experiments require particular care to assure the lowest possible power consumption, still offering the highest reliability demanded by very large particle detectors.

A Wireless Fiber Photometry System Based on a High-Precision CMOS Biosensor With Embedded Continuous-Time Modulation.

PubMed

Khiarak, Mehdi Noormohammadi; Martianova, Ekaterina; Bories, Cyril; Martel, Sylvain; Proulx, Christophe D; De Koninck, Yves; Gosselin, Benoit

2018-06-01

Fluorescence biophotometry measurements require wide dynamic range (DR) and high-sensitivity laboratory apparatus. Indeed, it is often very challenging to accurately resolve the small fluorescence variations in presence of noise and high-background tissue autofluorescence. There is a great need for smaller detectors combining high linearity, high sensitivity, and high-energy efficiency. This paper presents a new biophotometry sensor merging two individual building blocks, namely a low-noise sensing front-end and a order continuous-time modulator (CTSDM), into a single module for enabling high-sensitivity and high energy-efficiency photo-sensing. In particular, a differential CMOS photodetector associated with a differential capacitive transimpedance amplifier-based sensing front-end is merged with an incremental order 1-bit CTSDM to achieve a large DR, low hardware complexity, and high-energy efficiency. The sensor leverages a hardware sharing strategy to simplify the implementation and reduce power consumption. The proposed CMOS biosensor is integrated within a miniature wireless head mountable prototype for enabling biophotometry with a single implantable fiber in the brain of live mice. The proposed biophotometry sensor is implemented in a 0.18- CMOS technology, consuming from a 1.8- supply voltage, while achieving a peak dynamic range of over a 50- input bandwidth, a sensitivity of 24 mV/nW, and a minimum detectable current of 2.46- at a 20- sampling rate.

The use of low resistivity substrates for optimal noise reduction, ground referencing, and current conduction in mixed signal ASICs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zimmerman, T.

1997-12-01

This paper is distilled from a talk given at the 3rd International Meeting on Front End Electronics in Taos, N.M. on Nov. 7,1997. It is based on experience gained by designing and testing the SVX3 128 channel silicon strip detector readout chip. The SVX3 chip organization is shown in Fig. 1. The Front End section consists of an integrator and analog pipeline designed at Fermilab, and the Back End section is an ADC plus sparsification and readout logic designed at LBL. SVX3 is a deadtimeless readout chip, which means that the front end is acquiring low level analog signals whilemore » the back end is digitizing and reading out digital signals. It is thus a true mixed signal chip, and demands close attention to avoid disastrous coupling from the digital to the analog sections. SVX3 is designed in a bulk CMOS process (i.e., the circuits sit in a silicon substrate). In such a process, the substrate becomes a potential coupling path. This paper discusses the effect of the substrate resistivity on coupling, and also goes into a more general discussion of grounding and referencing in mixed signal designs and how low resistivity substrates can be used to advantage. Finally, an alternative power supply current conduction method for ASICs is presented as an additional advantage which can be obtained with low resistivity substrates. 1 ref., 13 figs., 1 tab.« less

RF Design of a Wideband CMOS Integrated Receiver for Phased Array Applications

NASA Astrophysics Data System (ADS)

Jackson, Suzy A.

2004-06-01

New silicon CMOS processes developed primarily for the burgeoning wireless networking market offer significant promise as a vehicle for the implementation of highly integrated receivers, especially at the lower end of the frequency range proposed for the Square Kilometre Array (SKA). An RF-CMOS ‘Receiver-on-a-Chip’ is being developed as part of an Australia Telescope program looking at technologies associated with the SKA. The receiver covers the frequency range 500 1700 MHz, with instantaneous IF bandwidth of 500 MHz and, on simulation, yields an input noise temperature of < 50 K at mid-band. The receiver will contain all active circuitry (LNA, bandpass filter, quadrature mixer, anti-aliasing filter, digitiser and serialiser) on one 0.18 μm RF-CMOS integrated circuit. This paper outlines receiver front-end development work undertaken to date, including design and simulation of an LNA using noise cancelling techniques to achieve a wideband input-power-match with little noise penalty.

Satellite-On-A-Chip Feasibility for Distributed Space Missions

DTIC Science & Technology

2006-07-10

S.pdf Satellite Systems Conference and Exhibit, Monterey, [33] H . Helvajian and S. W. Janson, "The Fabrication of a CA, 2004, Paper AIAA-2004-3152. 100...pp. 12-15. 700. [52]0. Yadid-Pecht and R. Etienne-Cummings, CMOS [64]S. W. Janson, H . Helvajian , S. Amimoto, G. Smit, D. Imagers: From...Janson, H . Helvajian , and K. Breuer "MEMS, Hasler, "A 80 p W/frame 104x128 CMOS Imager Microengineering and Aerospace Systems," in Proc. Front End for

Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

NASA Astrophysics Data System (ADS)

Giese, Malte; Vehring, Sönke; Böck, Georg; Jacob, Arne F.

2017-09-01

This paper presents requirements and front-end solutions for low-cost communication systems with data rates of 100 Gbit/s. Link budget analyses in different mass-market applications are conducted for that purpose. It proposes an implementation of the front-end as an active antenna array with support for beam steering and polarization multiplexing over the full W-band. The critical system components are investigated and presented. This applies to a transformer coupled power amplifier (PA) in 40 nm bulk CMOS. It shows saturated output power of more than 10 dBm and power-added-efficiency of more than 10 % over the full W-band. Furthermore, the performance of microstrip-to-waveguide transitions is shown exemplarily as an important part of the active antenna as it interfaces active circuitry and antenna in a polymer-and-metal process. The transition test design shows less than 0.9 dB insertion loss and more than 12 dB return loss for the differential transition over the full W-band.

The GBT-SCA, a radiation tolerant ASIC for detector control and monitoring applications in HEP experiments

NASA Astrophysics Data System (ADS)

Caratelli, A.; Bonacini, S.; Kloukinas, K.; Marchioro, A.; Moreira, P.; De Oliveira, R.; Paillard, C.

2015-03-01

The future upgrades of the LHC experiments will increase the beam luminosity leading to a corresponding growth of the amounts of data to be treated by the data acquisition systems. To address these needs, the GBT (Giga-Bit Transceiver optical link [1,2]) architecture was developed to provide the simultaneous transfer of readout data, timing and trigger signals as well as slow control and monitoring data. The GBT-SCA ASIC, part of the GBT chip-set, has the purpose to distribute control and monitoring signals to the on-detector front-end electronics and perform monitoring operations of detector environmental parameters. In order to meet the requirements of different front-end ASICs used in the experiments, it provides various user-configurable interfaces capable to perform simultaneous operations. It is designed employing radiation tolerant design techniques to ensure robustness against SEUs and TID radiation effects and is implemented in a commercial 130 nm CMOS technology. This work presents the GBT-SCA architecture, the ASIC interfaces, the data transfer protocol, and its integration with the GBT optical link.

Online readout and control unit for high-speed/high resolution readout of silicon tracking detectors

NASA Astrophysics Data System (ADS)

Bürger, J.; Hansen, K.; Lange, W.; Nowak, T.; Prell, S.; Zimmermann, W.

1997-02-01

We are describing a high speed VME readout and control module developed and presently working at the H1 experiment at DESY in Hamburg. It has the capability to read out 4 × 2048 analogue data channels at sampling rates up to 10 MHz with a dynamic input range of 1 V. The nominal resolution of the A/D converters can be adjusted between 8 and 12 bit. At the latter resolution we obtain signal-to-noise ratio better than 61.4 dB at a conversion rate of 5 MSps. At this data rate all 8192 detector channels can be read out to the internal raw data memory and VME interface within about 410 μs and 510 μs, respectively. The pedestal subtracted signals can be analyzed on-line. At a raw data hit occupation of 10%, the VME readout time is 50 μs per module. Each module provides four complementary CMOS signals to control the front-end electronics and four independent sets of power supplies for analogue and digital voltages (10 V, 100 mA) to drive the front-end electronics and for the bias voltage (100 V, 1.2 mA) to assure the full functionality of the detectors and the readout.

A High Input Impedance Low Noise Integrated Front-End Amplifier for Neural Monitoring.

PubMed

Zhou, Zhijun; Warr, Paul A

2016-12-01

Within neural monitoring systems, the front-end amplifier forms the critical element for signal detection and pre-processing, which determines not only the fidelity of the biosignal, but also impacts power consumption and detector size. In this paper, a novel combined feedback loop-controlled approach is proposed to compensate for input leakage currents generated by low noise amplifiers when in integrated circuit form alongside signal leakage into the input bias network. This loop topology ensures the Front-End Amplifier (FEA) maintains a high input impedance across all manufacturing and operational variations. Measured results from a prototype manufactured on the AMS 0.35 [Formula: see text] CMOS technology is provided. This FEA consumes 3.1 [Formula: see text] in 0.042 [Formula: see text], achieves input impedance of 42 [Formula: see text], and 18.2 [Formula: see text] input-referred noise.

A 4 μW/Ch analog front-end module with moderate inversion and power-scalable sampling operation for 3-D neural microsystems.

PubMed

Al-Ashmouny, Khaled M; Chang, Sun-Il; Yoon, Euisik

2012-10-01

We report an analog front-end prototype designed in 0.25 μm CMOS process for hybrid integration into 3-D neural recording microsystems. For scaling towards massive parallel neural recording, the prototype has investigated some critical circuit challenges in power, area, interface, and modularity. We achieved extremely low power consumption of 4 μW/channel, optimized energy efficiency using moderate inversion in low-noise amplifiers (K of 5.98 × 10⁸ or NEF of 2.9), and minimized asynchronous interface (only 2 per 16 channels) for command and data capturing. We also implemented adaptable operations including programmable-gain amplification, power-scalable sampling (up to 50 kS/s/channel), wide configuration range (9-bit) for programmable gain and bandwidth, and 5-bit site selection capability (selecting 16 out of 128 sites). The implemented front-end module has achieved a reduction in noise-energy-area product by a factor of 5-25 times as compared to the state-of-the-art analog front-end approaches reported to date.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, W.; Yin, J.; Li, C.

This paper presents a novel front-end electronics based on a front-end ASIC with post digital filtering and calibration dedicated to CZT detectors for PET imaging. A cascade amplifier based on split-leg topology is selected to realize the charge-sensitive amplifier (CSA) for the sake of low noise performances and the simple scheme of the power supplies. The output of the CSA is connected to a variable-gain amplifier to generate the compatible signals for the A/D conversion. A multi-channel single-slope ADC is designed to sample multiple points for the digital filtering and shaping. The digital signal processing algorithms are implemented by amore » FPGA. To verify the proposed scheme, a front-end readout prototype ASIC is designed and implemented in 0.35 μm CMOS process. In a single readout channel, a CSA, a VGA, a 10-bit ADC and registers are integrated. Two dummy channels, bias circuits, and time controller are also integrated. The die size is 2.0 mm x 2.1 mm. The input range of the ASIC is from 2000 e{sup -} to 100000 e{sup -}, which is suitable for the detection of the X-and gamma ray from 11.2 keV to 550 keV. The linearity of the output voltage is less than 1 %. The gain of the readout channel is 40.2 V/pC. The static power dissipation is about 10 mW/channel. The above tested results show that the electrical performances of the ASIC can well satisfy PET imaging applications. (authors)« less

CMOS integrated avalanche photodiodes and frequency-mixing optical sensor front end for portable NIR spectroscopy instruments.

PubMed

Yun, Ruida; Sthalekar, Chirag; Joyner, Valencia M

2011-01-01

This paper presents the design and measurement results of two avalanche photodiode structures (APDs) and a novel frequency-mixing transimpedance amplifier (TIA), which are key building blocks towards a monolithically integrated optical sensor front end for near-infrared (NIR) spectroscopy applications. Two different APD structures are fabricated in an unmodified 0.18 \\im CMOS process, one with a shallow trench isolation (STI) guard ring and the other with a P-well guard ring. The APDs are characterized in linear mode. The STI bounded APD demonstrates better performance and exhibits 3.78 A/W responsivity at a wavelength of 690 nm and bias voltage of 10.55 V. The frequency-mixing TIA (FM-TIA) employs a T-feedback network incorporating gate-controlled transistors for resistance modulation, enabling the simultaneous down-conversion and amplification of the high frequency modulated photodiode (PD) current. The TIA achieves 92 dS Ω conversion gain with 0.5 V modulating voltage. The measured IIP(3) is 10.6/M. The amplifier together with the 50 Ω output buffer draws 23 mA from a1.8 V power supply.

Dynamic Compression of the Signal in a Charge Sensitive Amplifier: From Concept to Design

NASA Astrophysics Data System (ADS)

Manghisoni, Massimo; Comotti, Daniele; Gaioni, Luigi; Ratti, Lodovico; Re, Valerio

2015-10-01

This work is concerned with the design of a low-noise Charge Sensitive Amplifier featuring a dynamic signal compression based on the non-linear features of an inversion-mode MOS capacitor. These features make the device suitable for applications where a non-linear characteristic of the front-end is required, such as in imaging instrumentation for free electron laser experiments. The aim of the paper is to discuss a methodology for the proper design of the feedback network enabling the dynamic signal compression. Starting from this compression solution, the design of a low-noise Charge Sensitive Amplifier is also discussed. The study has been carried out by referring to a 65 nm CMOS technology.

An integrated interface for peripheral neural system recording and stimulation: system design, electrical tests and in-vivo results.

PubMed

Carboni, Caterina; Bisoni, Lorenzo; Carta, Nicola; Puddu, Roberto; Raspopovic, Stanisa; Navarro, Xavier; Raffo, Luigi; Barbaro, Massimo

2016-04-01

The prototype of an electronic bi-directional interface between the Peripheral Nervous System (PNS) and a neuro-controlled hand prosthesis is presented. The system is composed of 2 integrated circuits: a standard CMOS device for neural recording and a HVCMOS device for neural stimulation. The integrated circuits have been realized in 2 different 0.35μ m CMOS processes available from ams. The complete system incorporates 8 channels each including the analog front-end, the A/D conversion, based on a sigma delta architecture and a programmable stimulation module implemented as a 5-bit current DAC; two voltage boosters supply the output stimulation stage with a programmable voltage scalable up to 17V. Successful in-vivo experiments with rats having a TIME electrode implanted in the sciatic nerve were carried out, showing the capability of recording neural signals in the tens of microvolts, with a global noise of 7μ V r m s , and to selectively elicit the tibial and plantar muscles using different active sites of the electrode.

Photodetectors and front-end electronics for the LHCb RICH upgrade

NASA Astrophysics Data System (ADS)

Cassina, L.; LHCb RICH

2017-12-01

The RICH detectors of the LHCb experiment provide identification of hadrons produced in high energy proton-proton collisions in the LHC at CERN over a wide momentum range (2-100 GeV/c). Cherenkov light is collected on photon detector planes sensitive to single photons. The RICH will be upgraded (in 2019) to read out every bunch crossing, at a rate of 40 MHz. The current hybrid photon detectors (HPD) will be replaced with multi-anode photomultiplier tubes (customisations of the Hamamatsu R11265 and the H12699 MaPMTs). These 8×8 pixel devices meet the experimental requirements thanks to their small pixel size, high gain, negligible dark count rate (∼50 Hz/cm2) and moderate cross-talk. The measured performance of several tubes is reported, together with their long-term stability. A new 8-channel front-end chip, named CLARO, has been designed in 0.35 μm CMOS AMS technology for the MaPMT readout. The CLARO chip operates in binary mode and combines low power consumption (∼1 mW/Ch), wide bandwidth (baseline restored in ⩽ 25 ns) and radiation hardness. A 12-bit digital register permits the optimisation of the dynamic range and the threshold level for each channel and provides tools for the on-site calibration. The design choices and the characterization of the electronics are presented.

Scaled CMOS Reliability and Considerations for Spacecraft Systems: Bottom-Up and Top-Down Perspective

NASA Technical Reports Server (NTRS)

White, Mark

2012-01-01

New space missions will increasingly rely on more advanced technologies because of system requirements for higher performance, particularly in instruments and high-speed processing. Component-level reliability challenges with scaled CMOS in spacecraft systems from a bottom-up perspective have been presented. Fundamental Front-end and Back-end processing reliability issues with more aggressively scaled parts have been discussed. Effective thermal management from system-level to the componentlevel (top-down) is a key element in overall design of reliable systems. Thermal management in space systems must consider a wide range of issues, including thermal loading of many different components, and frequent temperature cycling of some systems. Both perspectives (top-down and bottom-up) play a large role in robust, reliable spacecraft system design.

CMOS technology: a critical enabler for free-form electronics-based killer applications

NASA Astrophysics Data System (ADS)

Hussain, Muhammad M.; Hussain, Aftab M.; Hanna, Amir

2016-05-01

Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today their focus has been on rigid and bulky thin film based materials. Their applications have been limited to computation, communication, display and vehicular electronics. With the upcoming surge of Internet of Everything, we have critical opportunity to expand the world of electronics by bridging between CMOS technology and free form electronics which can be used as wearable, implantable and embedded form. The asymmetry of shape and softness of surface (skins) in natural living objects including human, other species, plants make them incompatible with the presently available uniformly shaped and rigidly structured today's CMOS electronics. But if we can break this barrier then we can use the physically free form electronics for applications like plant monitoring for expansion of agricultural productivity and quality, we can find monitoring and treatment focused consumer healthcare electronics - and many more creative applications. In our view, the fundamental challenge is to engage the mass users to materialize their creative ideas. Present form of electronics are too complex to understand, to work with and to use. By deploying game changing additive manufacturing, low-cost raw materials, transfer printing along with CMOS technology, we can potentially stick high quality CMOS electronics on any existing objects and embed such electronics into any future objects that will be made. The end goal is to make them smart to augment the quality of our life. We use a particular example on implantable electronics (brain machine interface) and its integration strategy enabled by CMOS device design and technology run path.

A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

NASA Astrophysics Data System (ADS)

Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

2014-06-01

A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

Readout electronics for LGAD sensors

NASA Astrophysics Data System (ADS)

Alonso, O.; Franch, N.; Canals, J.; Palacio, F.; López, M.; Vilà, A.; Diéguez, A.; Carulla, M.; Flores, D.; Hidalgo, S.; Merlos, A.; Pellegrini, G.; Quirion, D.

2017-02-01

In this paper, an ASIC fabricated in 180 nm CMOS technology from AMS with the very front-end electronics used to readout LGAD sensors is presented as well as its experimental results. The front-end has the typical architecture for Si-strip readout, i.e., preamplification stage with a Charge Sensitive Amplifier (CSA) followed by a CR-RC shaper. Both amplifiers are based on a folded cascode structure with a PMOS input transistor and the shaper only uses passive elements for the feedback stage. The CSA has programmable gain and a configurable input stage in order to adapt to the different input capacitance of the LGAD sensors (pixelated, short and long strips) and to the different input signal (depending on the gain of the LGAD). The fabricated prototype has an area of 0.865 mm × 0.965 mm and includes the biasing circuit for the CSA and the shaper, 4 analog channels (CSA+shaper) and programmable charge injection circuits included for testing purposes. Noise and power analysis performed during simulation fixed the size of the input transistor to W/L = 860 μm/0.2 μm. The shaping time is fixed by design at 1 us and, in this ASIC version, the feedback elements of the shaper are passive, which means that the area of the shaper can be reduced using active elements in future versions. Finally, the different gains of the CSA have been selected to maintain an ENC below 400 electrons for a detector capacitor of 20 pF, with a power consumption of 150 μ W per channel.

A high-frequency transimpedance amplifier for CMOS integrated 2D CMUT array towards 3D ultrasound imaging.

PubMed

Huang, Xiwei; Cheong, Jia Hao; Cha, Hyouk-Kyu; Yu, Hongbin; Je, Minkyu; Yu, Hao

2013-01-01

One transimpedance amplifier based CMOS analog front-end (AFE) receiver is integrated with capacitive micromachined ultrasound transducers (CMUTs) towards high frequency 3D ultrasound imaging. Considering device specifications from CMUTs, the TIA is designed to amplify received signals from 17.5MHz to 52.5MHz with center frequency at 35MHz; and is fabricated in Global Foundry 0.18-µm 30-V high-voltage (HV) Bipolar/CMOS/DMOS (BCD) process. The measurement results show that the TIA with power-supply 6V can reach transimpedance gain of 61dBΩ and operating frequency from 17.5MHz to 100MHz. The measured input referred noise is 27.5pA/√Hz. Acoustic pulse-echo testing is conducted to demonstrate the receiving functionality of the designed 3D ultrasound imaging system.

2.5 Gbit/s Optical Receiver Front-End Circuit with High Sensitivity and Wide Dynamic Range

NASA Astrophysics Data System (ADS)

Zhu, Tiezhu; Mo, Taishan; Ye, Tianchun

2017-12-01

An optical receiver front-end circuit is designed for passive optical network and fabricated in a 0.18 um CMOS technology. The whole circuit consists of a transimpedance amplifier (TIA), a single-ended to differential amplifier and an output driver. The TIA employs a cascode stage as the input stage and auxiliary amplifier to reduce the miller effect. Current injecting technique is employed to enlarge the input transistor's transconductance, optimize the noise performance and overcome the lack of voltage headroom. To achieve a wide dynamic range, an automatic gain control circuit with self-adaptive function is proposed. Experiment results show an optical sensitivity of -28 dBm for a bit error rate of 10-10 at 2.5 Gbit/s and a maxim input optical power of 2 dBm using an external photodiode. The chip occupies an area of 1×0.9 mm2 and consumes around 30 mW from single 1.8 V supply. The front-end circuit can be used in various optical receivers.

Continuous-time ΣΔ ADC with implicit variable gain amplifier for CMOS image sensor.

PubMed

Tang, Fang; Bermak, Amine; Abbes, Amira; Benammar, Mohieddine Amor

2014-01-01

This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency.

Design of an integrated sensor system for the detection of traces of different molecules in the air

NASA Astrophysics Data System (ADS)

Strle, D.; Muševič, I.

2015-04-01

This article presents the design of a miniature detection system and its associated signal processing electronics, which can detect and selectively recognize vapor traces of different materials in the air - including explosives. It is based on the array of surface-functionalized COMB capacitive sensors and extremely low noise, analog, integrated electronic circuit, hardwired digital signal processing hardware and additional software running on a PC. The instrument is sensitive and selective, consumes a minimum amount of energy, is very small (few mm3) and cheap to produce in large quantities, and is insensitive to mechanical influences. Using an electronic detection system built of low noise analog front-end and hard-wired digital signal processing, it is possible to detect less than 0.3ppt of TNT molecules in the atmosphere (3 TNT molecules in 1013 molecules of the air) at 25°C on a 1 Hz bandwidth using very small volume and approx. 10 mA current from a 5V supply voltage. The sensors are implemented in a modified MEMS process and analog electronics in 0.18 um CMOS technology.

Front-end electronics development for TPC detector in the MPD/NICA project

NASA Astrophysics Data System (ADS)

Cheremukhina, G.; Movchan, S.; Vereschagin, S.; Zaporozhets, S.

2017-06-01

The article is aimed at describing the development status, measuring results and design changes of the TPC front-end electronics. The TPC is placed in the middle of Multi-Purpose Detector (MPD) and provides tracing and identifying of charged particles in the pseudorapidity range |η| < 1.2. The readout system is one of the most complex parts of the TPC. The electronics of each readout chamber is an independent system. The whole system contains 95232 channels, 1488 64-channel—front-end cards (FEC), 24 readout control units (RCU). The front-end electronics (FEE) is based on ASICs, FPGAs and high-speed serial links. The concept of the TPC front-end electronics has been motivated from one side—by the requirements concerning the NICA accelerator complex which will operate at the luminosity up to 1027 cm-2 s-1 for Au79+ ions over the energy range of 4 < √SNN < 11 GeV with the trigger rate up to 7 kHz and from the other side—by the requirements of the 4-π geometry to minimize the substance on the end-caps of the TPC.

Design of a Multi-Channel Front-End Readout ASIC With Low Noise and Large Dynamic Input Range for APD-Based PET Imaging

NASA Astrophysics Data System (ADS)

Fang, X. C.; Hu-Guo, Ch.; Ollivier-Henry, N.; Brasse, D.; Hu, Y.

2010-06-01

This paper represents the design of a low-noise, wide band multi-channel readout integrated circuit (IC) used as front end readout electronics of avalanche photo diodes (APD) dedicated to a small animal positron emission tomography (PET) system. The first ten-channel prototype chip (APD-Chip) of the analog parts has been designed and fabricated in a 0.35 μm CMOS process. Every channel of the APD_Chip includes a charge-sensitive preamplifier (CSA), a CR-(RC)2 shaper, and an analog buffer. In a channel, the CSA reads charge signals (10 bits dynamic range) from an APD array having 10 pF of capacitance per pixel. A linearized degenerated differential pair which ensures high linearity in all dynamical range is used as the high feedback resistor for preventing pile up of signals. The designed CSA has the capability of compensating automatically up to 200 nA leakage current from the detector. The CR-(RC)2 shaper filters and shapes the output signal of the CSA. An equivalent input noise charge obtained from test is 275 e -+ 10 e-/pF. In this paper the prototype is presented for both its theoretical analysis and its test results.

A 1.2 Gb/s Data Transmission Unit in CMOS 0.18 μm technology for the ALICE Inner Tracking System front-end ASIC

NASA Astrophysics Data System (ADS)

Mazza, G.; Aglieri Rinella, G.; Benotto, F.; Corrales Morales, Y.; Kugathasan, T.; Lattuca, A.; Lupi, M.; Ravasenga, I.

2017-02-01

The upgrade of the ALICE Inner Tracking System is based on a Monolithic Active Pixel Sensor and ASIC designed in a CMOS 0.18 μ m process. In order to provide the required output bandwidth (1.2 Gb/s for the inner layers and 400 Mb/s for the outer ones) on a single high speed serial link, a custom Data Transmission Unit (DTU) has been developed in the same process. The DTU includes a clock multiplier PLL, a double data rate serializer and a pseudo-LVDS driver with pre-emphasis and is designed to be SEU tolerant.

An RFID tag system-on-chip with wireless ECG monitoring for intelligent healthcare systems.

PubMed

Wang, Cheng-Pin; Lee, Shuenn-Yuh; Lai, Wei-Chih

2013-01-01

This paper presents a low-power wireless ECG acquisition system-on-chip (SoC), including an RF front-end circuit, a power unit, an analog front-end circuit, and a digital circuitry. The proposed RF front-end circuit can provide the amplitude shift keying demodulation and distance to digital conversion to accurately receive the data from the reader. The received data will wake up the power unit to provide the required supply voltages of analog front-end (AFE) and digital circuitry. The AFE, including a pre-amplifier, an analog filter, a post-amplifier, and an analog-to-digital converter, is used for the ECG acquisition. Moreover, the EPC Class I Gen 2 UHF standard is employed in the digital circuitry for the handshaking of communication and the control of the system. The proposed SoC has been implemented in 0.18-µm standard CMOS process and the measured results reveal the communication is compatible to the RFID protocol. The average power consumption for the operating chip is 12 µW. Using a Sony PR44 battery to the supply power (605mAh@1.4V), the RFID tag SoC operates continuously for about 50,000 hours (>5 years), which is appropriate for wireless wearable ECG monitoring systems.

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

NASA Astrophysics Data System (ADS)

Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

2018-01-01

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

Wideband Fully-Programmable Dual-Mode CMOS Analogue Front-End for Electrical Impedance Spectroscopy

PubMed Central

Valente, Virgilio; Demosthenous, Andreas

2016-01-01

This paper presents a multi-channel dual-mode CMOS analogue front-end (AFE) for electrochemical and bioimpedance analysis. Current-mode and voltage-mode readouts, integrated on the same chip, can provide an adaptable platform to correlate single-cell biosensor studies with large-scale tissue or organ analysis for real-time cancer detection, imaging and characterization. The chip, implemented in a 180-nm CMOS technology, combines two current-readout (CR) channels and four voltage-readout (VR) channels suitable for both bipolar and tetrapolar electrical impedance spectroscopy (EIS) analysis. Each VR channel occupies an area of 0.48 mm2, is capable of an operational bandwidth of 8 MHz and a linear gain in the range between −6 dB and 42 dB. The gain of the CR channel can be set to 10 kΩ, 50 kΩ or 100 kΩ and is capable of 80-dB dynamic range, with a very linear response for input currents between 10 nA and 100 μA. Each CR channel occupies an area of 0.21 mm2. The chip consumes between 530 μA and 690 μA per channel and operates from a 1.8-V supply. The chip was used to measure the impedance of capacitive interdigitated electrodes in saline solution. Measurements show close matching with results obtained using a commercial impedance analyser. The chip will be part of a fully flexible and configurable fully-integrated dual-mode EIS system for impedance sensors and bioimpedance analysis. PMID:27463721

A front-end readout mixed chip for high-efficiency small animal PET imaging

NASA Astrophysics Data System (ADS)

Ollivier-Henry, N.; Berst, J. D.; Colledani, C.; Hu-Guo, Ch.; Mbow, N. A.; Staub, D.; Guyonnet, J. L.; Hu, Y.

2007-02-01

Today, the main challenge of Positron Emission Tomography (PET) systems dedicated to small animal imaging is to obtain high detection efficiency and a highly accurate localization of radioisotopes. If we focus only on the PET characteristics such as the spatial resolution, its accuracy depends on the design of detector and on the electronics readout system as well. In this paper, we present a new design of such readout system with full custom submicrometer CMOS implementation. The front end chip consists of two main blocks from which the energy information and the time stamp with subnanosecond resolution can be obtained. In our A Multi-Modality Imaging System for Small Animal (AMISSA) PET system design, a matrix of LYSO crystals has to be read at each end by a 64 channels multianode photomultiplier tube. A specific readout electronic has been developed at the Hubert Curien Multidisciplinary Institute (IPHC, France). The architecture of this readout for the energy information detection is composed of a low-noise preamplifier, a CR-RC shaper and an analogue memory. In order to obtain the required dynamic range from 15 to 650 photoelectrons with good linearity, a current mode approach has been chosen for the preamplifier. To detect the signal with a temporal resolution of 1 ns, a comparator with a very low threshold (˜0.3 photoelectron) has been implemented. It gives the time reference of arrival signal coming from the detector. In order to obtain the time coincidence with a temporal resolution of 1 ns, a Time-to-Digital Converter (TDC) based on a Delay-Locked-Loop (DLL) has been designed. The chip is fabricated with AMS 0.35 μm process. The ASIC architecture and some simulation results will be presented in the paper.

A 0.09 μW low power front-end biopotential amplifier for biosignal recording.

PubMed

Tseng, Yuhwai; Ho, Yingchieh; Kao, Shuoting; Su, Chauchin

2012-10-01

This work presents a biopotential front-end amplifier in which the MOS transistors are biased in subthreshold region with a supply voltage and current of 0.4-0.8 V and 0.23-1.86 μA, respectively, to reduce the system power. Flicker noise is then removed using a chopping technique, and differential interference produced by electrode impedance imbalance is suppressed using a Gm-C filter. Additionally, the circuit is fabricated using TSMC 0.18 μm CMOS technology with a core area of 0.77 × 0.36 mm². With a minimum supply voltage of 0.4 V, the measured SNR and power consumption of the proposed IC chip are 54.1 dB and 0.09μW, respectively.

The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments

NASA Astrophysics Data System (ADS)

Li, Ying; Niu, Guofu; Cressler, John D.; Patel, Jagdish; Liu, S. T.; Reed, Robert A.; Mojarradi, Mohammad M.; Blalock, Benjamin J.

2003-06-01

We evaluate the usefulness of partially depleted SOI CMOS devices fabricated in a 0.35 μm technology on UNIBOND material for electronics applications requiring robust operation under extreme environment conditions consisting of low and/or high temperature, and under substantial radiation exposure. The threshold voltage, effective mobility, and the impact ionization parameters were determined across temperature for both the nFETs and the pFETs. The radiation response was characterized using threshold voltage shifts of both the front-gate and back-gate transistors. These results suggest that this 0.35 μm partially depleted SOI CMOS technology is suitable for operation across a wide range of extreme environment conditions consisting of: cryogenic temperatures down to 86 K, elevated temperatures up to 573 K, and under radiation exposure to 1.3 Mrad(Si) total dose.

Conceptual design of front ends for the advanced photon source multi-bend achromats upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaski, Y., E-mail: jaskiy@aps.anl.gov; Westferro, F., E-mail: westferr@aps.anl.gov; Lee, S. H., E-mail: shlee@aps.anl.gov

2016-07-27

The proposed Advanced Photon Source (APS) upgrade from a double-bend achromats (DBA) to multi-bend achromats (MBA) lattice with ring energy change from 7 GeV to 6 GeV and beam current from 100 mA to 200 mA poses new challenges for front ends. All front ends must be upgraded to fulfill the following requirements: 1) handle the high heat load from two insertion devices in either inline or canted configuration, 2) include a clearing magnet in the front end to deflect and dump any electrons in case the electrons escape from the storage ring during swap-out injection with the safety shuttersmore » open, 3) incorporate the next generation x-ray beam position monitors (XBPMs) into the front end to meet the new stringent beam stability requirements. This paper presents the evaluation of the existing APS front ends and standardizes the insertion device (ID) front ends into two types: one for the single beam and one for the canted beams. The conceptual design of high heat load front end (HHLFE) and canted undulator front end (CUFE) for APS MBA upgrade is presented.« less

Conceptual Design of Front Ends for the Advanced Photon Source Multi-bend Achromats Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaski, Y.; Westferro, F.; Lee, S. H.

2016-07-27

The proposed Advanced Photon Source (APS) upgrade from a double-bend achromats (DBA) to multi-bend achromats (MBA) lattice with ring energy change from 7 GeV to 6 GeV and beam current from 100 mA to 200 mA poses new challenges for front ends. All front ends must be upgraded to fulfill the following requirements: 1) handle the high heat load from two insertion devices in either inline or canted configuration, 2) include a clearing magnet in the front end to deflect and dump any electrons in case the electrons escape from the storage ring during swap-out injection with the safety shuttersmore » open, 3) incorporate the next generation x-ray beam position monitors (XBPMs) into the front end to meet the new stringent beam stability requirements. This paper presents the evaluation of the existing APS front ends and standardizes the insertion device (ID) front ends into two types: one for the single beam and one for the canted beams. The conceptual design of high heat load front end (HHLFE) and canted undulator front end (CUFE) for APS MBA upgrade is presented.« less

SAMPA Chip: the New 32 Channels ASIC for the ALICE TPC and MCH Upgrades

NASA Astrophysics Data System (ADS)

Adolfsson, J.; Ayala Pabon, A.; Bregant, M.; Britton, C.; Brulin, G.; Carvalho, D.; Chambert, V.; Chinellato, D.; Espagnon, B.; Hernandez Herrera, H. D.; Ljubicic, T.; Mahmood, S. M.; Mjörnmark, U.; Moraes, D.; Munhoz, M. G.; Noël, G.; Oskarsson, A.; Osterman, L.; Pilyar, A.; Read, K.; Ruette, A.; Russo, P.; Sanches, B. C. S.; Severo, L.; Silvermyr, D.; Suire, C.; Tambave, G. J.; Tun-Lanoë, K. M. M.; van Noije, W.; Velure, A.; Vereschagin, S.; Wanlin, E.; Weber, T. O.; Zaporozhets, S.

2017-04-01

This paper presents the test results of the second prototype of SAMPA, the ASIC designed for the upgrade of read-out front end electronics of the ALICE Time Projection Chamber (TPC) and Muon Chamber (MCH). SAMPA is made in a 130 nm CMOS technology with 1.25 V nominal voltage supply and provides 32 channels, with selectable input polarity, and three possible combinations of shaping time and sensitivity. Each channel consists of a Charge Sensitive Amplifier, a semi-Gaussian shaper and a 10-bit ADC; a Digital Signal Processor provides digital filtering and compression capability. In the second prototype run both full chip and single test blocks were fabricated, allowing block characterization and full system behaviour studies. Experimental results are here presented showing agreement with requirements for both the blocks and the full chip.

A Complete Readout Chain of the ATLAS Tile Calorimeter for the HL-LHC: from FATALIC Front-End Electronics to Signal Reconstruction

NASA Astrophysics Data System (ADS)

Senkin, Sergey

2018-01-01

The ATLAS Collaboration has started a vast programme of upgrades in the context of high-luminosity LHC (HL-LHC) foreseen in 2024. We present here one of the frontend readout options, an ASIC called FATALIC, proposed for the high-luminosity phase LHC upgrade of the ATLAS Tile Calorimeter. Based on a 130 nm CMOS technology, FATALIC performs the complete signal processing, including amplification, shaping and digitisation. We describe the full characterisation of FATALIC and also the Optimal Filtering signal reconstruction method adapted to fully exploit the FATALIC three-range layout. Additionally we present the resolution performance of the whole chain measured using the charge injection system designed for calibration. Finally we discuss the results of the signal reconstruction used on real data collected during a preliminary beam test at CERN.

Design of a 2.4-GHz CMOS monolithic fractional-N frequency synthesizer

NASA Astrophysics Data System (ADS)

Shu, Keliu

The wireless communication technology and market have been growing rapidly since a decade ago. The high demand market is a driving need for higher integration in the wireless transceivers. The trend is to achieve low-cost, small form factor and low power consumption. With the ever-reducing feature size, it is becoming feasible to integrate the RF front-end together with the baseband in the low-cost CMOS technology. The frequency synthesizer is a key building block in the RF front-end of the transceivers. It is used as a local oscillator for frequency translation and channel selection. The design of a 2.4-GHz low-power frequency synthesizer in 0.35mum CMOS is a challenging task mainly due to the high-speed prescaler. In this dissertation, a brief review of conventional PLL and frequency synthesizers is provided. Design techniques of a 2.4-GHz monolithic SigmaDelta fractional-N frequency synthesizer are investigated. Novel techniques are proposed to tackle the speed and integration bottlenecks of high-frequency PLL. A low-power and inherently glitch-free phase-switching prescaler and an on-chip loop filter with capacitance multiplier are developed. Compared with the existing and popular dual-path topology, the proposed loop filter reduces circuit complexity and its power consumption and noise are negligible. Furthermore, a third-order three-level digital SigmaDelta modulator topology is employed to reduce the phase noise generated by the modulator. Suitable PFD and charge-pump designs are employed to reduce their nonlinearity effects and thus minimize the folding of the SigmaDelta modulator-shaped phase noise. A prototype of the fractional-N synthesizer together with some standalone building blocks is designed and fabricated in TSMC 0.35mum CMOS through MOSIS. The prototype frequency synthesizer and standalone prescaler and loop filter are characterized. The feasibility and practicality of the proposed prescaler and loop filter are experimentally verified.

Toward Realization of 2.4 GHz Balunless Narrowband Receiver Front-End for Short Range Wireless Applications.

PubMed

El-Desouki, Munir M; Qasim, Syed Manzoor; BenSaleh, Mohammed S; Deen, M Jamal

2015-05-07

The demand for radio frequency (RF) transceivers operating at 2.4 GHz band has attracted considerable research interest due to the advancement in short range wireless technologies. The performance of RF transceivers depends heavily on the transmitter and receiver front-ends. The receiver front-end is comprised of a low-noise amplifier (LNA) and a downconversion mixer. There are very few designs that focus on connecting the single-ended output LNA to a double-balanced mixer without the use of on-chip transformer, also known as a balun. The objective of designing such a receiver front-end is to achieve high integration and low power consumption. To meet these requirements, we present the design of fully-integrated 2.4 GHz receiver front-end, consisting of a narrow-band LNA and a double balanced mixer without using a balun. Here, the single-ended RF output signal of the LNA is translated into differential signal using an NMOS-PMOS (n-channel metal-oxide-semiconductor, p-channel metal-oxide-semiconductor) transistor differential pair instead of the conventional NMOS-NMOS transistor configuration, for the RF amplification stage of the double-balanced mixer. The proposed receiver circuit fabricated using TSMC 0.18 µm CMOS technology operates at 2.4 GHz and produces an output signal at 300 MHz. The fabricated receiver achieves a gain of 16.3 dB and consumes only 6.74 mW operating at 1.5 V, while utilizing 2.08 mm2 of chip area. Measurement results demonstrate the effectiveness and suitability of the proposed receiver for short-range wireless applications, such as in wireless sensor network (WSN).

On-chip copper-dielectric interference filters for manufacturing of ambient light and proximity CMOS sensors.

PubMed

Frey, Laurent; Masarotto, Lilian; D'Aillon, Patrick Gros; Pellé, Catherine; Armand, Marilyn; Marty, Michel; Jamin-Mornet, Clémence; Lhostis, Sandrine; Le Briz, Olivier

2014-07-10

Filter technologies implemented on CMOS image sensors for spectrally selective applications often use a combination of on-chip organic resists and an external substrate with multilayer dielectric coatings. The photopic-like and near-infrared bandpass filtering functions respectively required by ambient light sensing and user proximity detection through time-of-flight can be fully integrated on chip with multilayer metal-dielectric filters. Copper, silicon nitride, and silicon oxide are the materials selected for a technological proof-of-concept on functional wafers, due to their immediate availability in front-end semiconductor fabs. Filter optical designs are optimized with respect to specific performance criteria, and the robustness of the designs regarding process errors are evaluated for industrialization purposes.

A Monolithic Multisensor Microchip with Complete On-Chip RF Front-End

PubMed Central

Felini, Corrado; Della Corte, Francesco G.

2018-01-01

In this paper, a new wireless sensor, designed for a 0.35 µm CMOS technology, is presented. The microchip was designed to be placed on an object for the continuous remote monitoring of its temperature and illumination state. The temperature sensor is based on the temperature dependence of the I-V characteristics of bipolar transistors available in CMOS technology, while the illumination sensor is an integrated p-n junction photodiode. An on-chip 2.5 GHz transmitter, coupled to a mm-sized dipole radiating element fabricated on the same microchip and made in the top metal layer of the same die, sends the collected data wirelessly to a radio receiver using an On-Off Keying (OOK) modulation pattern. PMID:29301297

Front-end electronics of the Belle II drift chamber

NASA Astrophysics Data System (ADS)

Shimazaki, Shoichi; Taniguchi, Takashi; Uchida, Tomohisa; Ikeno, Masahiro; Taniguchi, Nanae; Tanaka, Manobu M.

2014-01-01

This paper describes the performance of the Belle II central drift chamber (CDC) front-end electronics. The front-end electronics consists of a current sensitive preamplifier, a 1/t cancellation circuit, baseline restorers, a comparator for timing measurement and an analog buffer for the dE/dx measurement on a CDC readout card. The CDC readout card is located on the endplate of the CDC. Mass production will be completed after the performance of the chip is verified. The electrical performance and results of a neutron/gamma-ray irradiation test are reported here.

Noise propagation effects in power supply distribution systems for high-energy physics experiments

NASA Astrophysics Data System (ADS)

Arteche, F.; Rivetta, C.; Iglesias, M.; Echeverria, I.; Pradas, A.; Arcega, F. J.

2017-12-01

High-energy physics experiments are supplied by thousands of power supply units placed in distant areas from the front-end electronics. The power supply units and the front-end electronics are connected through long power cables that propagate the output noise from the power supplies to the detector. This paper addresses the effect of long cables on the noise propagation and the impact that those cables have on the conducted emission levels required for the power supplies and the selection of EMI filters for the front-end electronic low-voltage input. This analysis is part of the electromagnetic compatibility based design focused on functional safety to define the type of cable, shield connections, EMI filters and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.

Noise propagation effects in power supply distribution systems for high-energy physics experiments

DOE PAGES

Arteche, F.; Rivetta, C.; Iglesias, M.; ...

2017-12-05

High-energy physics experiments are supplied by thousands of power supply units placed in distant areas from the front-end electronics. The power supply units and the front-end electronics are connected through long power cables that propagate the output noise from the power supplies to the detector. Here, this paper addresses the effect of long cables on the noise propagation and the impact that those cables have on the conducted emission levels required for the power supplies and the selection of EMI filters for the front-end electronic low-voltage input. Lastly, this analysis is part of the electromagnetic compatibility based design focused onmore » functional safety to define the type of cable, shield connections, EMI filters and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.« less

Noise propagation effects in power supply distribution systems for high-energy physics experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arteche, F.; Rivetta, C.; Iglesias, M.

High-energy physics experiments are supplied by thousands of power supply units placed in distant areas from the front-end electronics. The power supply units and the front-end electronics are connected through long power cables that propagate the output noise from the power supplies to the detector. Here, this paper addresses the effect of long cables on the noise propagation and the impact that those cables have on the conducted emission levels required for the power supplies and the selection of EMI filters for the front-end electronic low-voltage input. Lastly, this analysis is part of the electromagnetic compatibility based design focused onmore » functional safety to define the type of cable, shield connections, EMI filters and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.« less

Commercial Buck Converters and Custom Coil Development for the ATLAS Inner Detector Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhawan, S.; Lanni, F.; Baker, O.

2010-04-01

A new generation of higher gain commercial buck converters built using advanced short channel CMOS processes has the potential to operate in the Atlas Inner Detector at the Super Large Hadron Collider (sLHC). This approach would inherently be more efficient than the existing practice of locating the power conversion external to the detector. The converters must operate in a large magnetic field and be able to survive both high doses of ionizing radiation and large neutron fluences. The presence of a large magnetic field necessitates the use of an air core inductor which is developed and discussed here. Noise measurementsmore » will be made to investigate the effect of the high frequency switching of the buck converter on the sensitive front end electronics. Radiation hardness of selected buck converters and mosfets will also be reported.« less

An asynchronous data-driven readout prototype for CEPC vertex detector

NASA Astrophysics Data System (ADS)

Yang, Ping; Sun, Xiangming; Huang, Guangming; Xiao, Le; Gao, Chaosong; Huang, Xing; Zhou, Wei; Ren, Weiping; Li, Yashu; Liu, Jianchao; You, Bihui; Zhang, Li

2017-12-01

The Circular Electron Positron Collider (CEPC) is proposed as a Higgs boson and/or Z boson factory for high-precision measurements on the Higgs boson. The precision of secondary vertex impact parameter plays an important role in such measurements which typically rely on flavor-tagging. Thus silicon CMOS Pixel Sensors (CPS) are the most promising technology candidate for a CEPC vertex detector, which can most likely feature a high position resolution, a low power consumption and a fast readout simultaneously. For the R&D of the CEPC vertex detector, we have developed a prototype MIC4 in the Towerjazz 180 nm CMOS Image Sensor (CIS) process. We have proposed and implemented a new architecture of asynchronous zero-suppression data-driven readout inside the matrix combined with a binary front-end inside the pixel. The matrix contains 128 rows and 64 columns with a small pixel pitch of 25 μm. The readout architecture has implemented the traditional OR-gate chain inside a super pixel combined with a priority arbiter tree between the super pixels, only reading out relevant pixels. The MIC4 architecture will be introduced in more detail in this paper. It will be taped out in May and will be characterized when the chip comes back.

Evaluation of electron beam stabilization for ion implant processing

NASA Astrophysics Data System (ADS)

Buffat, Stephen J.; Kickel, Bee; Philipps, B.; Adams, J.; Ross, Matthew F.; Minter, Jason P.; Marlowe, Trey; Wong, Selmer S.

1999-06-01

With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zujun, E-mail: wangzujun@nint.ac.cn; Ma, Wuying; Huang, Shaoyan

The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a {sup 60}Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo responsemore » non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.« less

Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H.; Benoit, M.; Chen, H.

High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardware. CaRIBOu has been used in themore » testbeam of the HV-CMOS sensor AMS180v4 at CERN. Preliminary results have shown that the test system is very versatile. In conclusion, further development is ongoing to adapt to different sensors, and to make it available to various lab test stands.« less

Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade

DOE PAGES

Liu, H.; Benoit, M.; Chen, H.; ...

2017-01-11

High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardware. CaRIBOu has been used in themore » testbeam of the HV-CMOS sensor AMS180v4 at CERN. Preliminary results have shown that the test system is very versatile. In conclusion, further development is ongoing to adapt to different sensors, and to make it available to various lab test stands.« less

Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

NASA Astrophysics Data System (ADS)

Wang, Zujun; Ma, Wuying; Huang, Shaoyan; Yao, Zhibin; Liu, Minbo; He, Baoping; Liu, Jing; Sheng, Jiangkun; Xue, Yuan

2016-03-01

The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

Prospects for charge sensitive amplifiers in scaled CMOS

NASA Astrophysics Data System (ADS)

O'Connor, Paul; De Geronimo, Gianluigi

2002-03-01

Due to its low cost and flexibility for custom design, monolithic CMOS technology is being increasingly employed in charge preamplifiers across a broad range of applications, including both scientific research and commercial products. The associated detectors have capacitances ranging from a few tens of fF to several hundred pF. Applications call for pulse shaping from tens of ns to tens of μs, and constrain the available power per channel from tens of μW to tens of mW. At the same time a new technology generation, with changed device parameters, appears every 2 years or so. The optimum design of the front-end circuitry is examined taking into account submicron device characteristics, weak inversion operation, the reset system, and power supply scaling. Experimental results from recent prototypes will be presented. We will also discuss the evolution of preamplifier topologies and anticipated performance limits as CMOS technology scales down to the 0.1 μm/1.0 V generation in 2006.

The PixFEL project: Progress towards a fine pitch X-ray imaging camera for next generation FEL facilities

NASA Astrophysics Data System (ADS)

Rizzo, G.; Batignani, G.; Benkechkache, M. A.; Bettarini, S.; Casarosa, G.; Comotti, D.; Dalla Betta, G.-F.; Fabris, L.; Forti, F.; Grassi, M.; Lodola, L.; Malcovati, P.; Manghisoni, M.; Mendicino, R.; Morsani, F.; Paladino, A.; Pancheri, L.; Paoloni, E.; Ratti, L.; Re, V.; Traversi, G.; Vacchi, C.; Verzellesi, G.; Xu, H.

2016-07-01

The INFN PixFEL project is developing the fundamental building blocks for a large area X-ray imaging camera to be deployed at next generation free electron laser (FEL) facilities with unprecedented intensity. Improvement in performance beyond the state of art in imaging instrumentation will be explored adopting advanced technologies like active edge sensors, a 65 nm node CMOS process and vertical integration. These are the key ingredients of the PixFEL project to realize a seamless large area focal plane instrument composed by a matrix of multilayer four-side buttable tiles. In order to minimize the dead area and reduce ambiguities in image reconstruction, a fine pitch active edge thick sensor is being optimized to cope with very high intensity photon flux, up to 104 photons per pixel, in the range from 1 to 10 keV. A low noise analog front-end channel with this wide dynamic range and a novel dynamic compression feature, together with a low power 10 bit analog to digital conversion up to 5 MHz, has been realized in a 110 μm pitch with a 65 nm CMOS process. Vertical interconnection of two CMOS tiers will be also explored in the future to build a four-side buttable readout chip with high density memories. In the long run the objective of the PixFEL project is to build a flexible X-ray imaging camera for operation both in burst mode, like at the European X-FEL, or in continuous mode with the high frame rates anticipated for future FEL facilities.

An ultra low-power front-end IC for wearable health monitoring system.

PubMed

Yu-Pin Hsu; Zemin Liu; Hella, Mona M

2016-08-01

This paper presents a low-power front-end IC for wearable health monitoring systems. The IC, designed in a standard 0.13μm CMOS technology, fully integrates a low-noise analog front-end (AFE) to process the weak bio-signals, followed by an analog-to-digital converter (ADC) to digitize the extracted signals. An AC-coupled driving buffer, that interfaces between the AFE and the ADC is introduced to scale down the power supply of the ADC. The power consumption decreases by 50% compared to the case without power supply scaling. The AFE passes signals from 0.5Hz to 280Hz and from 0.7Hz to 160Hz with a simulated input referred noise of 1.6μVrms and achieves a maximum gain of 35dB/41dB respectively, with a noise-efficiency factor (NEF) of the AFE is 1. The 8-bit ADC achieves a simulated 7.96-bit resolution at 10KS/s sampling rate under 0.5V supply voltage. The overall system consumes only 0.86μW at dual supply voltages of 1V (AFE) and 0.5 V (ADC).

A CMOS 0.18 μm 600 MHz clock multiplier PLL and a pseudo-LVDS driver for the high speed data transmission for the ALICE Inner Tracking System front-end chip

NASA Astrophysics Data System (ADS)

Lattuca, A.; Mazza, G.; Aglieri Rinella, G.; Cavicchioli, C.; Chanlek, N.; Collu, A.; Degerli, Y.; Dorokhov, A.; Flouzat, C.; Gajanana, D.; Gao, C.; Guilloux, F.; Hillemanns, H.; Hristozkov, S.; Junique, A.; Keil, M.; Kim, D.; Kofarago, M.; Kugathasan, T.; Kwon, Y.; Mager, M.; Sielewicz, K. Marek; Marin Tobon, C. Augusto; Marras, D.; Martinengo, P.; Mugnier, H.; Musa, L.; Pham, T. Hung; Puggioni, C.; Reidt, F.; Riedler, P.; Rousset, J.; Siddhanta, S.; Snoeys, W.; Song, M.; Usai, G.; Van Hoorne, J. Willem; Yang, P.

2016-01-01

This work presents the 600 MHz clock multiplier PLL and the pseudo-LVDS driver which are two essential components of the Data Transmission Unit (DTU), a fast serial link for the 1.2 Gb/s data transmission of the ALICE inner detector front-end chip (ALPIDE). The PLL multiplies the 40 MHz input clock in order to obtain the 600 MHz and the 200 MHz clock for a fast serializer which works in Double Data Rate mode. The outputs of the serializer feed the pseudo-LVDS driver inputs which transmits the data from the pixel chip to the patch panel with a limited number of signal lines. The driver drives a 5.3 m-6.5 m long differential transmission line by steering a maximum of 5 mA of current at the target speed. To overcome bandwidth limitations coming from the long cables the pre-emphasis can be applied to the output. Currents for the main and pre-emphasis driver can individually be adjusted using on-chip digital-to-analog converters. The circuits will be integrated in the pixel chip and are designed in the same 0.18 μm CMOS technology and will operate from the same 1.8 V supply. Design and test results of both circuits are presented.

Design of a wideband CMOS impedance spectroscopy ASIC analog front-end for multichannel biosensor interfaces.

PubMed

Valente, Virgilio; Dai Jiang; Demosthenous, Andreas

2015-08-01

This paper presents the preliminary design and simulation of a flexible and programmable analog front-end (AFE) circuit with current and voltage readout capabilities for electric impedance spectroscopy (EIS). The AFE is part of a fully integrated multifrequency EIS platform. The current readout comprises of a transimpedance stage and an automatic gain control (AGC) unit designed to accommodate impedance changes larger than 3 order of magnitude. The AGC is based on a dynamic peak detector that tracks changes in the input current over time and regulates the gain of a programmable gain amplifier in order to optimise the signal-to-noise ratio. The system works up to 1 MHz. The voltage readout consists of a 2 stages of fully differential current-feedback instrumentation amplifier which provide 100 dB of CMRR and a programmable gain up to 20 V/V per stage with a bandwidth in excess of 10MHz.

SALT, a dedicated readout chip for high precision tracking silicon strip detectors at the LHCb Upgrade

NASA Astrophysics Data System (ADS)

Bugiel, Sz.; Dasgupta, R.; Firlej, M.; Fiutowski, T.; Idzik, M.; Kuczynska, M.; Moron, J.; Swientek, K.; Szumlak, T.

2016-02-01

The Upstream Tracker (UT) silicon strip detector, one of the central parts of the tracker system of the modernised LHCb experiment, will use a new 128-channel readout ASIC called SALT. It will extract and digitise analogue signals from the UT sensors, perform digital signal processing and transmit a serial output data. The SALT is being designed in CMOS 130 nm process and uses a novel architecture comprising of analog front-end and fast (40 MSps) ultra-low power (<0.5 mW) 6-bit ADC in each channel. The prototype ASICs of important functional blocks, like analogue front-end, 6-bit SAR ADC, PLL, and DLL, were designed, fabricated and tested. A prototype of an 8-channel version of the SALT chip, comprising all important functionalities was also designed and fabricated. The architecture and design of the SALT, together with the selected preliminary tests results, are presented.

Low-noise front-end electronics for detection of intermediate-frequency weak light signals

NASA Astrophysics Data System (ADS)

Lin, Cunbao; Yan, Shuhua; Du, Zhiguang; Wei, Chunhua; Wang, Guochao

2015-02-01

A novel low-noise front-end electronics was proposed for detection of light signals with intensity about 10 μW and frequency above 2.7 MHz. The direct current (DC) power supply, pre-amplifier and main-amplifier were first designed, simulated and then realized. Small-size components were used to make the power supply small, and the pre-amplifier and main-amplifier were the least capacitors to avoid the phase shift of the signals. The performance of the developed front-end electronics was verified in cross-grating diffraction experiments. The results indicated that the output peak-topeak noise of the +/-5 V DC power supply was about 2 mV, and the total output current was 1.25 A. The signal-to-noise ratio (SNR) of the output signal of the pre-amplifier was about 50 dB, and it increased to nearly 60 dB after the mainamplifier, which means this front-end electronics was especially suitable for using in the phase-sensitive and integrated precision measurement systems.

Back-end and interface implementation of the STS-XYTER2 prototype ASIC for the CBM experiment

NASA Astrophysics Data System (ADS)

Kasinski, K.; Szczygiel, R.; Zabolotny, W.

2016-11-01

Each front-end readout ASIC for the High-Energy Physics experiments requires robust and effective hit data streaming and control mechanism. A new STS-XYTER2 full-size prototype chip for the Silicon Tracking System and Muon Chamber detectors in the Compressed Baryonic Matter experiment at Facility for Antiproton and Ion Research (FAIR, Germany) is a 128-channel time and amplitude measuring solution for silicon microstrip and gas detectors. It operates at 250 kHit/s/channel hit rate, each hit producing 27 bits of information (5-bit amplitude, 14-bit timestamp, position and diagnostics data). The chip back-end implements fast front-end channel read-out, timestamp-wise hit sorting, and data streaming via a scalable interface implementing the dedicated protocol (STS-HCTSP) for chip control and hit transfer with data bandwidth from 9.7 MHit/s up to 47 MHit/s. It also includes multiple options for link diagnostics, failure detection, and throttling features. The back-end is designed to operate with the data acquisition architecture based on the CERN GBTx transceivers. This paper presents the details of the back-end and interface design and its implementation in the UMC 180 nm CMOS process.

Front-end Electronics for Unattended Measurement (FEUM). Prototype Test Plan

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conrad, Ryan C.; Morris, Scott J.; Smith, Leon E.

2015-09-16

The IAEA has requested that PNNL perform an initial set of tests on front-end electronics for unattended measurement (FEUM) prototypes. The FEUM prototype test plan details the tests to be performed, the criteria for evaluation, and the procedures used to execute the tests.

HYBRID SILICON-ON-SAPPHIRE/SCALED CMOS INTERFERENCE MITIGATION FRONT END BASED ON SIMULTANEOUS NOISE CANCELLATION, ACTIVE-INTERFERENCE CANCELLATION AND N-PATH-MIXER FILTERING

DTIC Science & Technology

2017-04-01

INTERFERENCE-CANCELLATION AND N-PATH-MIXER FILTERING Harish Krishnaswamy, Negar Reiskarimian, and Linxiao Zhang Columbia University APRIL 2017 Final...INTERFERENCE-CANCELLATION AND N- PATH-MIXER FILTERING 5a. CONTRACT NUMBER FA8650-14-1-7414 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 61101E/62716E 6...techniques for developing interference mitigation technology (IMT) enabling frequency-agile, reconfigurable filter -less receivers. Wideband noise

Holographic Waveguide Array Rollable Display.

DTIC Science & Technology

1997-04-01

scale lithography for fabrication. Projection systems offer large images, in the range of 40 - 60 inches diagonal, and both front-view and rear-view...Boulder, CO, and a l-D array of digital micromirrors ( DMD ) from Texas Instruments. The linear format permits simple driving electronics and high...TI’s DMD , or a CMOS-SLM. A collimated laser beaming (combine three colors) or a collimated white light beam from a high intensity halogen lamp can be

CNES developments of key detection technologies to prepare next generation focal planes for high resolution Earth observation

NASA Astrophysics Data System (ADS)

Materne, A.; Virmontois, C.; Bardoux, A.; Gimenez, T.; Biffi, J. M.; Laubier, D.; Delvit, J. M.

2014-10-01

This paper describes the activities managed by CNES (French National Space Agency) for the development of focal planes for next generation of optical high resolution Earth observation satellites, in low sun-synchronous orbit. CNES has launched a new programme named OTOS, to increase the level of readiness (TRL) of several key technologies for high resolution Earth observation satellites. The OTOS programme includes several actions in the field of detection and focal planes: a new generation of CCD and CMOS image sensors, updated analog front-end electronics and analog-to-digital converters. The main features that must be achieved on focal planes for high resolution Earth Observation, are: readout speed, signal to noise ratio at low light level, anti-blooming efficiency, geometric stability, MTF and line of sight stability. The next steps targeted are presented in comparison to the in-flight measured performance of the PLEIADES satellites launched in 2011 and 2012. The high resolution panchromatic channel is still based upon Backside illuminated (BSI) CCDs operated in Time Delay Integration (TDI). For the multispectral channel, the main evolution consists in moving to TDI mode and the competition is open with the concurrent development of a CCD solution versus a CMOS solution. New CCDs will be based upon several process blocks under evaluation on the e2v 6 inches BSI wafer manufacturing line. The OTOS strategy for CMOS image sensors investigates on one hand custom TDI solutions within a similar approach to CCDs, and, on the other hand, investigates ways to take advantage of existing performance of off-the-shelf 2D arrays CMOS image sensors. We present the characterization results obtained from test vehicles designed for custom TDI operation on several CIS technologies and results obtained before and after radiation on snapshot 2D arrays from the CMOSIS CMV family.

Subwavelength InSb-based Slot wavguides for THz transport: concept and practical implementations.

PubMed

Ma, Youqiao; Zhou, Jun; Pištora, Jaromír; Eldlio, Mohamed; Nguyen-Huu, Nghia; Maeda, Hiroshi; Wu, Qiang; Cada, Michael

2016-12-07

Seeking better surface plasmon polariton (SPP) waveguides is of critical importance to construct the frequency-agile terahertz (THz) front-end circuits. We propose and investigate here a new class of semiconductor-based slot plasmonic waveguides for subwavelength THz transport. Optimizations of the key geometrical parameters demonstrate its better guiding properties for simultaneous realization of long propagation lengths (up to several millimeters) and ultra-tight mode confinement (~λ 2 /530) in the THz spectral range. The feasibility of the waveguide for compact THz components is also studied to lay the foundations for its practical implementations. Importantly, the waveguide is compatible with the current complementary metal-oxide-semiconductor (CMOS) fabrication technique. We believe the proposed waveguide configuration could offer a potential for developing a CMOS plasmonic platform and can be designed into various components for future integrated THz circuits (ITCs).

Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line

NASA Astrophysics Data System (ADS)

León Pérez, Edgar A. A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader

2018-05-01

We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications. He is currently a Postdoctoral Researcher in the Institute of Nanotechnologies of Lyon (INL), INSA de Lyon, France, in the Electronics Department. His current research include indium oxide nanoparticles for non-volatile memory applications, and the integrations of these devices in CMOS BEOL.

Design of ultra-low power biopotential amplifiers for biosignal acquisition applications.

PubMed

Zhang, Fan; Holleman, Jeremy; Otis, Brian P

2012-08-01

Rapid development in miniature implantable electronics are expediting advances in neuroscience by allowing observation and control of neural activities. The first stage of an implantable biosignal recording system, a low-noise biopotential amplifier (BPA), is critical to the overall power and noise performance of the system. In order to integrate a large number of front-end amplifiers in multichannel implantable systems, the power consumption of each amplifier must be minimized. This paper introduces a closed-loop complementary-input amplifier, which has a bandwidth of 0.05 Hz to 10.5 kHz, an input-referred noise of 2.2 μ Vrms, and a power dissipation of 12 μW. As a point of comparison, a standard telescopic-cascode closed-loop amplifier with a 0.4 Hz to 8.5 kHz bandwidth, input-referred noise of 3.2 μ Vrms, and power dissipation of 12.5 μW is presented. Also for comparison, we show results from an open-loop complementary-input amplifier that exhibits an input-referred noise of 3.6 μ Vrms while consuming 800 nW of power. The two closed-loop amplifiers are fabricated in a 0.13 μ m CMOS process. The open-loop amplifier is fabricated in a 0.5 μm SOI-BiCMOS process. All three amplifiers operate with a 1 V supply.

Low-Power Analog Processing for Sensing Applications: Low-Frequency Harmonic Signal Classification

PubMed Central

White, Daniel J.; William, Peter E.; Hoffman, Michael W.; Balkir, Sina

2013-01-01

A low-power analog sensor front-end is described that reduces the energy required to extract environmental sensing spectral features without using Fast Fouriér Transform (FFT) or wavelet transforms. An Analog Harmonic Transform (AHT) allows selection of only the features needed by the back-end, in contrast to the FFT, where all coefficients must be calculated simultaneously. We also show that the FFT coefficients can be easily calculated from the AHT results by a simple back-substitution. The scheme is tailored for low-power, parallel analog implementation in an integrated circuit (IC). Two different applications are tested with an ideal front-end model and compared to existing studies with the same data sets. Results from the military vehicle classification and identification of machine-bearing fault applications shows that the front-end suits a wide range of harmonic signal sources. Analog-related errors are modeled to evaluate the feasibility of and to set design parameters for an IC implementation to maintain good system-level performance. Design of a preliminary transistor-level integrator circuit in a 0.13 μm complementary metal-oxide-silicon (CMOS) integrated circuit process showed the ability to use online self-calibration to reduce fabrication errors to a sufficiently low level. Estimated power dissipation is about three orders of magnitude less than similar vehicle classification systems that use commercially available FFT spectral extraction. PMID:23892765

An Ultra-Low Voltage Analog Front End for Strain Gauge Sensory System Application in 0.18µm CMOS

NASA Astrophysics Data System (ADS)

Edward, Alexander; Chan, Pak Kwong

This paper presents analysis and design of a new ultra-low voltage analog front end (AFE) dedicated to strain sensor applications. The AFE, designed in 0.18µm CMOS process, features a chopper-stabilized instrumentation amplifier (IA), a balanced active MOSFET-C 2nd order low pass filter (LPF), a clock generator and a voltage booster which operate at supply voltage (Vdd) of 0.6V. The designed IA achieves 30dB of closed-loop gain, 101dB of common-mode rejection ratio (CMRR) at 50Hz, 80dB of power-supply rejection ratio (PSRR) at 50Hz, thermal noise floor of 53.4 nV/√Hz, current consumption of 14µA, and noise efficiency factor (NEF) of 9.7. The high CMRR and rail-to-rail output swing capability is attributed to a new low voltage realization of the active-bootstrapped technique using a pseudo-differential gain-boosting operational transconductance amplifier (OTA) and proposed current-driven bulk (CDB) biasing technique. An output capacitor-less low-dropout regulator (LDO), with a new fast start-up LPF technique, is used to regulate this 0.6V supply from a 0.8-1.0V energy harvesting power source. It achieves power supply rejection (PSR) of 42dB at frequency of 1MHz. A cascode compensated pseudo differential amplifier is used as the filter's building block for low power design. The filter's single-ended-to-balanced converter is implemented using a new low voltage amplifier with two-stage common-mode cancellation. The overall AFE was simulated to have 65.6dB of signal-to-noise ratio (SNR), total harmonic distortion (THD) of less than 0.9% for a 100Hz sinusoidal maximum input signal, bandwidth of 2kHz, and power consumption of 51.2µW. Spectre RF simulations were performed to validate the design using BSIM3V3 transistor models provided by GLOBALFOUNDRIES 0.18µm CMOS process.

A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

PubMed

Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

2013-04-01

In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats.

Design and characterization of the PREC (Prototype Readout Electronics for Counting particles)

NASA Astrophysics Data System (ADS)

Assis, P.; Brogueira, P.; Ferreira, M.; Luz, R.; Mendes, L.

2016-08-01

The design, tests and performance of a novel, low noise, acquisition system—the PREC (Prototype Readout Electronics for Counting particles) is presented in this article. PREC is a system developed using discrete electronics for particle counting applications using RPCs (Resistive Plate Chamber) detectors. PREC can, however, be used with other kind of detectors that present fast pulses, e.g. Silicon Photomultipliers. The PREC system consists in several Front-End boards that transmit data to a purely digital Motherboard. The amplification and discrimination of the signal is performed in the Front-End boards, making them the critical component of the system. In this paper, the Front-End was tested extensively by measuring the gain, noise level, crosstalk, trigger efficiency, propagation time and power consumption. The gain shows a decrease with the working temperature and an increase with the power supply voltage. The Front-End board shows a low noise level (<= 1.6 mV at 3σ level) and no crosstalk is detected above this level. The s-curve of the trigger efficiency is characterized by a 3 mV gap from the region where most of the signals are triggered to almost no signal is triggered. The signal transit time between the Front-End input and the digital Motherboard is estimated to be 5.82 ns. The maximum power consumption is 3.372 W for the Motherboard and 3.576 W and 1.443 W for each Front-End analogue circuitry and digital part, respectively.

Test of ATLAS RPCs Front-End electronics

NASA Astrophysics Data System (ADS)

Aielli, G.; Camarri, P.; Cardarelli, R.; Di Ciaccio, A.; Di Stante, L.; Liberti, B.; Paoloni, A.; Pastori, E.; Santonico, R.

2003-08-01

The Front-End Electronics performing the ATLAS RPCs readout is a full custom 8 channels GaAs circuit, which integrates in a single die both the analog and digital signal processing. The die is bonded on the Front-End board which is completely closed inside the detector Faraday cage. About 50 000 FE boards are foreseen for the experiment. The complete functionality of the FE boards will be certificated before the detector assembly. We describe here the systematic test devoted to check the dynamic functionality of each single channel and the selection criteria applied. It measures and registers all relevant electronics parameters to build up a complete database for the experiment. The statistical results from more than 1100 channels are presented.

FELIX: a PCIe based high-throughput approach for interfacing front-end and trigger electronics in the ATLAS Upgrade framework

NASA Astrophysics Data System (ADS)

Anderson, J.; Bauer, K.; Borga, A.; Boterenbrood, H.; Chen, H.; Chen, K.; Drake, G.; Dönszelmann, M.; Francis, D.; Guest, D.; Gorini, B.; Joos, M.; Lanni, F.; Lehmann Miotto, G.; Levinson, L.; Narevicius, J.; Panduro Vazquez, W.; Roich, A.; Ryu, S.; Schreuder, F.; Schumacher, J.; Vandelli, W.; Vermeulen, J.; Whiteson, D.; Wu, W.; Zhang, J.

2016-12-01

The ATLAS Phase-I upgrade (2019) requires a Trigger and Data Acquisition (TDAQ) system able to trigger and record data from up to three times the nominal LHC instantaneous luminosity. The Front-End LInk eXchange (FELIX) system provides an infrastructure to achieve this in a scalable, detector agnostic and easily upgradeable way. It is a PC-based gateway, interfacing custom radiation tolerant optical links from front-end electronics, via PCIe Gen3 cards, to a commodity switched Ethernet or InfiniBand network. FELIX enables reducing custom electronics in favour of software running on commercial servers. The FELIX system, the design of the PCIe prototype card and the integration test results are presented in this paper.

Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors

NASA Astrophysics Data System (ADS)

Brooke, Martin A.; Lee, Myunghee; Jokerst, Nan Marie; Camperi-Ginestet, C.

1995-04-01

While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the circuit designer will soon conclude that a high speed analog-oriented fabrication process provides superior performance advantages to a digital CMOS process. However, for applications where there are overwhelming reasons to integrate the receivers on the same IC as large amounts of conventional digital circuitry, the low yield and high cost of the exotic analog-oriented fabrication is no longer an option. The issues that result from a requirement to use a digital CMOS IC process cut across all aspects of receiver design, and result in significant differences in circuit design philosophy and topology. Digital ICs are primarily designed to yield small, fast CMOS devices for digital logic gates, thus no effort is put into providing accurate or high speed resistances, or capacitors. This lack of any reliable resistance or capacitance has a significant impact on receiver design. Since resistance optimization is not a prerogative of the digital IC process engineer, the wisest option is thus to not use these elements, opting instead for active circuitry to replace the functions normally ascribed to resistance and capacitance. Depending on the application receiver noise may be a dominant design constraint. The noise performance of CMOS amplifiers is different than bipolar or GaAs MESFET circuits, shot noise is generally insignificant when compared to channel thermal noise. As a result the optimal input stage topology is significantly different for the different technologies. It is found that, at speeds of operation approaching the limits of the digital CMOS process, open loop designs have noise-power-gain-bandwidth tradeoff performance superior to feedback designs. Furthermore, the lack of good resisters and capacitors complicates the use of feedback circuits. Thus feedback is generally not used in the front-end of our digital process CMOS receivers.

Linearity enhancement design of a 16-channel low-noise front-end readout ASIC for CdZnTe detectors

NASA Astrophysics Data System (ADS)

Zeng, Huiming; Wei, Tingcun; Wang, Jia

2017-03-01

A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only a metal-oxide-semiconductor (MOS) transistor, thus the shaping time of the slow shaper can be kept constant for different amounts of input energies. As a result, the linearity of conversion gain is improved significantly. The ASIC was designed and fabricated in a 0.35 μm CMOS process with a die size of 2.60 mm×3.53 mm. The tested results show that a typical channel provides an equivalent noise charge (ENC) of 109.7e-+16.3e-/pF with a power consumption of 4 mW and achieves a conversion gain of 87 mV/fC with a nonlinearity of <0.4%. The linearity of conversion gain is improved by at least 86.6% as compared with the traditional approaches using the same front-end readout architecture and manufacture process. Moreover, the inconsistency among channels is <0.3%. An energy resolution of 2.975 keV (FWHM) for gamma rays of 59.5 keV was measured by connecting the ASIC to a 5 mm×5 mm ×2 mm CdZnTe detector at room temperature. The front-end readout ASIC presented in this paper achieves an outstanding linearity performance without compromising the noise, power consumption, and chip size performances.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, K.; Chen, H.; Wu, W.

We present that in the upgrade of ATLAS experiment, the front-end electronics components are subjected to a large radiation background. Meanwhile high speed optical links are required for the data transmission between the on-detector and off-detector electronics. The GBT architecture and the Versatile Link (VL) project are designed by CERN to support the 4.8 Gbps line rate bidirectional high-speed data transmission which is called GBT link. In the ATLAS upgrade, besides the link with on-detector, the GBT link is also used between different off-detector systems. The GBTX ASIC is designed for the on-detector front-end, correspondingly for the off-detector electronics, themore » GBT architecture is implemented in Field Programmable Gate Arrays (FPGA). CERN launches the GBT-FPGA project to provide examples in different types of FPGA. In the ATLAS upgrade framework, the Front-End LInk eXchange (FELIX) system is used to interface the front end electronics of several ATLAS subsystems. The GBT link is used between them, to transfer the detector data and the timing, trigger, control and monitoring information. The trigger signal distributed in the down-link from FELIX to the front-end requires a fixed and low latency. In this paper, several optimizations on the GBT-FPGA IP core are introduced, to achieve a lower fixed latency. For FELIX, a common firmware will be used to interface different front-ends with support of both GBT modes: the forward error correction mode and the wide mode. The modified GBT-FPGA core has the ability to switch between the GBT modes without FPGA reprogramming. Finally, the system clock distribution of the multi-channel FELIX firmware is also discussed in this paper.« less

Optimization on fixed low latency implementation of the GBT core in FPGA

DOE PAGES

Chen, K.; Chen, H.; Wu, W.; ...

2017-07-11

We present that in the upgrade of ATLAS experiment, the front-end electronics components are subjected to a large radiation background. Meanwhile high speed optical links are required for the data transmission between the on-detector and off-detector electronics. The GBT architecture and the Versatile Link (VL) project are designed by CERN to support the 4.8 Gbps line rate bidirectional high-speed data transmission which is called GBT link. In the ATLAS upgrade, besides the link with on-detector, the GBT link is also used between different off-detector systems. The GBTX ASIC is designed for the on-detector front-end, correspondingly for the off-detector electronics, themore » GBT architecture is implemented in Field Programmable Gate Arrays (FPGA). CERN launches the GBT-FPGA project to provide examples in different types of FPGA. In the ATLAS upgrade framework, the Front-End LInk eXchange (FELIX) system is used to interface the front end electronics of several ATLAS subsystems. The GBT link is used between them, to transfer the detector data and the timing, trigger, control and monitoring information. The trigger signal distributed in the down-link from FELIX to the front-end requires a fixed and low latency. In this paper, several optimizations on the GBT-FPGA IP core are introduced, to achieve a lower fixed latency. For FELIX, a common firmware will be used to interface different front-ends with support of both GBT modes: the forward error correction mode and the wide mode. The modified GBT-FPGA core has the ability to switch between the GBT modes without FPGA reprogramming. Finally, the system clock distribution of the multi-channel FELIX firmware is also discussed in this paper.« less

Optimization on fixed low latency implementation of the GBT core in FPGA

NASA Astrophysics Data System (ADS)

Chen, K.; Chen, H.; Wu, W.; Xu, H.; Yao, L.

2017-07-01

In the upgrade of ATLAS experiment [1], the front-end electronics components are subjected to a large radiation background. Meanwhile high speed optical links are required for the data transmission between the on-detector and off-detector electronics. The GBT architecture and the Versatile Link (VL) project are designed by CERN to support the 4.8 Gbps line rate bidirectional high-speed data transmission which is called GBT link [2]. In the ATLAS upgrade, besides the link with on-detector, the GBT link is also used between different off-detector systems. The GBTX ASIC is designed for the on-detector front-end, correspondingly for the off-detector electronics, the GBT architecture is implemented in Field Programmable Gate Arrays (FPGA). CERN launches the GBT-FPGA project to provide examples in different types of FPGA [3]. In the ATLAS upgrade framework, the Front-End LInk eXchange (FELIX) system [4, 5] is used to interface the front-end electronics of several ATLAS subsystems. The GBT link is used between them, to transfer the detector data and the timing, trigger, control and monitoring information. The trigger signal distributed in the down-link from FELIX to the front-end requires a fixed and low latency. In this paper, several optimizations on the GBT-FPGA IP core are introduced, to achieve a lower fixed latency. For FELIX, a common firmware will be used to interface different front-ends with support of both GBT modes: the forward error correction mode and the wide mode. The modified GBT-FPGA core has the ability to switch between the GBT modes without FPGA reprogramming. The system clock distribution of the multi-channel FELIX firmware is also discussed in this paper.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

NASA Astrophysics Data System (ADS)

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-09-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

Novel active signal compression in low-noise analog readout at future X-ray FEL facilities

NASA Astrophysics Data System (ADS)

Manghisoni, M.; Comotti, D.; Gaioni, L.; Lodola, L.; Ratti, L.; Re, V.; Traversi, G.; Vacchi, C.

2015-04-01

This work presents the design of a low-noise front-end implementing a novel active signal compression technique. This feature can be exploited in the design of analog readout channels for application to the next generation free electron laser (FEL) experiments. The readout architecture includes the low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time variant shaper used to process the signal at the preamplifier output and a 10-bit successive approximation register (SAR) analog-to-digital converter (ADC). The channel will be operated in such a way to cope with the high frame rate (exceeding 1 MHz) foreseen for future XFEL machines. The choice of a 65 nm CMOS technology has been made in order to include all the building blocks in the target pixel pitch of 100 μm. This work has been carried out in the frame of the PixFEL Project funded by the Istituto Nazionale di Fisica Nucleare (INFN), Italy.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

PubMed Central

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-01-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. PMID:27659796

An integrated multichannel neural recording analog front-end ASIC with area-efficient driven right leg circuit.

PubMed

Tao Tang; Wang Ling Goh; Lei Yao; Jia Hao Cheong; Yuan Gao

2017-07-01

This paper describes an integrated multichannel neural recording analog front end (AFE) with a novel area-efficient driven right leg (DRL) circuit to improve the system common mode rejection ratio (CMRR). The proposed AFE consists of an AC-coupled low-noise programmable-gain amplifier, an area-efficient DRL block and a 10-bit SAR ADC. Compared to conventional DRL circuit, the proposed capacitor-less DRL design achieves 90% chip area reduction with enhanced CMRR performance, making it ideal for multichannel biomedical recording applications. The AFE circuit has been designed in a standard 0.18-μm CMOS process. Post-layout simulation results show that the AFE provides two gain settings of 54dB/60dB while consuming 1 μA per channel under a supply voltage of 1 V. The input-referred noise of the AFE integrated from 1 Hz to 10k Hz is only 4 μVrms and the CMRR is 110 dB.

Injection Locking Techniques for Spectrum Analysis

NASA Astrophysics Data System (ADS)

Gathma, Timothy D.; Buckwalter, James F.

2011-04-01

Wideband spectrum analysis supports future communication systems that reconfigure and adapt to the capacity of the spectral environment. While test equipment manufacturers offer wideband spectrum analyzers with excellent sensitivity and resolution, these spectrum analyzers typically cannot offer acceptable size, weight, and power (SWAP). CMOS integrated circuits offer the potential to fully integrate spectrum analysis capability with analog front-end circuitry and digital signal processing on a single chip. Unfortunately, CMOS lacks high-Q passives and wideband resonator tunability that is necessary for heterodyne implementations of spectrum analyzers. As an alternative to the heterodyne receiver architectures, two nonlinear methods for performing wideband, low-power spectrum analysis are presented. The first method involves injecting the spectrum of interest into an array of injection-locked oscillators. The second method employs the closed loop dynamics of both injection locking and phase locking to independently estimate the injected frequency and power.

A 256 pixel magnetoresistive biosensor microarray in 0.18μm CMOS

PubMed Central

Hall, Drew A.; Gaster, Richard S.; Makinwa, Kofi; Wang, Shan X.; Murmann, Boris

2014-01-01

Magnetic nanotechnologies have shown significant potential in several areas of nanomedicine such as imaging, therapeutics, and early disease detection. Giant magnetoresistive spin-valve (GMR SV) sensors coupled with magnetic nanotags (MNTs) possess great promise as ultra-sensitive biosensors for diagnostics. We report an integrated sensor interface for an array of 256 GMR SV biosensors designed in 0.18 μm CMOS. Arranged like an imager, each of the 16 column level readout channels contains an analog front- end and a compact ΣΔ modulator (0.054 mm2) with 84 dB of dynamic range and an input referred noise of 49 nT/√Hz. Performance is demonstrated through detection of an ovarian cancer biomarker, secretory leukocyte peptidase inhibitor (SLPI), spiked at concentrations as low as 10 fM. This system is designed as a replacement for optical protein microarrays while also providing real-time kinetics monitoring. PMID:24761029

A fully integrated direct-conversion digital satellite tuner in 0.18 μm CMOS

NASA Astrophysics Data System (ADS)

Si, Chen; Zengwang, Yang; Mingliang, Gu

2011-04-01

A fully integrated direct-conversion digital satellite tuner for DVB-S/S2 and ABS-S applications is presented. A broadband noise-canceling Balun-LNA and passive quadrature mixers provided a high-linearity low noise RF front-end, while the synthesizer integrated the loop filter to reduce the solution cost and system debug time. Fabricated in 0.18 μm CMOS, the chip achieves a less than 7.6 dB noise figure over a 900-2150 MHz L-band, while the measured sensitivity for 4.42 MS/s QPSK-3/4 mode is -91 dBm at the PCB connector. The fully integrated integer-N synthesizer operating from 2150 to 4350 MHz achieves less than 1 °C integrated phase error. The chip consumes about 145 mA at a 3.3 V supply with internal integrated LDOs.

Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Hu-Guo, C.; Husson, D.

2011-07-01

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial pointsmore » of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)« less

A Fully Implantable, NFC Enabled, Continuous Interstitial Glucose Monitor

PubMed Central

Anabtawi, Nijad; Freeman, Sabrina; Ferzli, Rony

2017-01-01

This work presents an integrated system-on-chip (SoC) that forms the core of a long-term, fully implantable, battery assisted, passive continuous glucose monitor. It integrates an amperometric glucose sensor interface, a near field communication (NFC) wireless front-end and a fully digital switched mode power management unit for supply regulation and on board battery charging. It uses 13.56 MHz (ISM) band to harvest energy and backscatter data to an NFC reader. System was implemented in 14nm CMOS technology and validated with post layout simulations. PMID:28702512

A Fully Implantable, NFC Enabled, Continuous Interstitial Glucose Monitor.

PubMed

Anabtawi, Nijad; Freeman, Sabrina; Ferzli, Rony

2016-02-01

This work presents an integrated system-on-chip (SoC) that forms the core of a long-term, fully implantable, battery assisted, passive continuous glucose monitor. It integrates an amperometric glucose sensor interface, a near field communication (NFC) wireless front-end and a fully digital switched mode power management unit for supply regulation and on board battery charging. It uses 13.56 MHz (ISM) band to harvest energy and backscatter data to an NFC reader. System was implemented in 14nm CMOS technology and validated with post layout simulations.

Electro-optical detector for use in a wide mass range mass spectrometer

NASA Technical Reports Server (NTRS)

Giffin, Charles E. (Inventor)

1976-01-01

An electro-optical detector is disclosed for use in a wide mass range mass spectrometer (MS), in the latter the focal plane is at or very near the exit end of the magnetic analyzer, so that a strong magnetic field of the order of 1000G or more is present at the focal plane location. The novel detector includes a microchannel electron multiplier array (MCA) which is positioned at the focal plane to convert ion beams which are focused by the MS at the focal plane into corresponding electron beams which are then accelerated to form visual images on a conductive phosphored surface. These visual images are then converted into images on the target of a vidicon camera or the like for electronic processing. Due to the strong magnetic field at the focal plane, in one embodiment of the invention, the MCA with front and back parallel ends is placed so that its front end forms an angle of not less than several degrees, preferably on the order of 10.degree.-20.degree., with respect to the focal plane, with the center line of the front end preferably located in the focal plane. In another embodiment the MCA is wedge-shaped, with its back end at an angle of about 10.degree.-20.degree. with respect to the front end. In this embodiment the MCA is placed so that its front end is located at the focal plane.

FELIX: a PCIe based high-throughput approach for interfacing front-end and trigger electronics in the ATLAS Upgrade framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, J.; Bauer, K.; Borga, A.

The ATLAS Phase-I upgrade (2019) requires a Trigger and Data Acquisition (TDAQ) system able to trigger and record data from up to three times the nominal LHC instantaneous luminosity. Furthermore, the Front-End LInk eXchange (FELIX) system provides an infrastructure to achieve this in a scalable, detector agnostic and easily upgradeable way. It is a PC-based gateway, interfacing custom radiation tolerant optical links from front-end electronics, via PCIe Gen3 cards, to a commodity switched Ethernet or InfiniBand network. FELIX enables reducing custom electronics in favour of software running on commercial servers. Here, the FELIX system, the design of the PCIe prototypemore » card and the integration test results are presented.« less

FELIX: a PCIe based high-throughput approach for interfacing front-end and trigger electronics in the ATLAS Upgrade framework

DOE PAGES

Anderson, J.; Bauer, K.; Borga, A.; ...

2016-12-13

The ATLAS Phase-I upgrade (2019) requires a Trigger and Data Acquisition (TDAQ) system able to trigger and record data from up to three times the nominal LHC instantaneous luminosity. Furthermore, the Front-End LInk eXchange (FELIX) system provides an infrastructure to achieve this in a scalable, detector agnostic and easily upgradeable way. It is a PC-based gateway, interfacing custom radiation tolerant optical links from front-end electronics, via PCIe Gen3 cards, to a commodity switched Ethernet or InfiniBand network. FELIX enables reducing custom electronics in favour of software running on commercial servers. Here, the FELIX system, the design of the PCIe prototypemore » card and the integration test results are presented.« less

Readout ASICs and Electronics for the 144-channel HAPDs for the Aerogel RICH at Belle II

NASA Astrophysics Data System (ADS)

Nishida, S.; Adachi, I.; Ikeda, H.; Hara, K.; Iijima, T.; Iwata, S.; Korpar, S.; Križan, P.; Kuroda, E.; Pestotnik, R.; Seljak, A.; Sumiyoshi, T.; Takagaki, H.

The particle identification (PID) device in the endcap of the Belle detector will be upgraded to a ring imaging Cherenkov counter (RICH) using aerogel as a radiator at the Belle II experiment. We develop the electronics to read out the 70,000 channels of hit information from the 144-channel hybrid avalanche photodetectors (HAPD), of the aerogel RICH detector. A readout ASIC is developed to digitize the HAPD signals, and was used in a beam test with the prototype detector. The performance and plan of the ASIC is reported in this study. We have also designed the readout electronics for the aerogel RICH, which consist of front-end boards with the ASICs merger boards to collect data from the front-end boards. A front-end board that fits in the actual available space for the aerogel RICH electronics was produced.

Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Mattiazzo, S.; Aimo, I.; Baudot, J.; Bedda, C.; La Rocca, P.; Perez, A.; Riggi, F.; Spiriti, E.

2015-10-01

The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018-2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

Ultra-fast high-resolution hybrid and monolithic CMOS imagers in multi-frame radiography

NASA Astrophysics Data System (ADS)

Kwiatkowski, Kris; Douence, Vincent; Bai, Yibin; Nedrow, Paul; Mariam, Fesseha; Merrill, Frank; Morris, Christopher L.; Saunders, Andy

2014-09-01

A new burst-mode, 10-frame, hybrid Si-sensor/CMOS-ROIC FPA chip has been recently fabricated at Teledyne Imaging Sensors. The intended primary use of the sensor is in the multi-frame 800 MeV proton radiography at LANL. The basic part of the hybrid is a large (48×49 mm2) stitched CMOS chip of 1100×1100 pixel count, with a minimum shutter speed of 50 ns. The performance parameters of this chip are compared to the first generation 3-frame 0.5-Mpixel custom hybrid imager. The 3-frame cameras have been in continuous use for many years, in a variety of static and dynamic experiments at LANSCE. The cameras can operate with a per-frame adjustable integration time of ~ 120ns-to- 1s, and inter-frame time of 250ns to 2s. Given the 80 ms total readout time, the original and the new imagers can be externally synchronized to 0.1-to-5 Hz, 50-ns wide proton beam pulses, and record up to ~1000-frame radiographic movies typ. of 3-to-30 minute duration. The performance of the global electronic shutter is discussed and compared to that of a high-resolution commercial front-illuminated monolithic CMOS imager.

A Low Cost Bluetooth Low Energy Transceiver for Wireless Sensor Network Applications with a Front-end Receiver-Matching Network-Reusing Power Amplifier Load Inductor.

PubMed

Liang, Zhen; Li, Bin; Huang, Mo; Zheng, Yanqi; Ye, Hui; Xu, Ken; Deng, Fangming

2017-04-19

In this work, a low cost Bluetooth Low Energy (BLE) transceiver for wireless sensor network (WSN) applications, with a receiver (RX)-matching network-reusing power amplifier (PA) load inductor, is presented. In order to decrease the die area, only two inductors were used in this work. Besides the one used in the voltage control oscillator (VCO), the PA load inductor was reused as the RX impedance matching component in the front-end. Proper controls have been applied to achieve high transmitter (TX) input impedance when the transceiver is in the receiving mode, and vice versa. This allows the TRX-switch/matching network integration without significant performance degradation. The RX adopted a low-IF structure and integrated a single-ended low noise amplifier (LNA), a current bleeding mixer, a 4th complex filter and a delta-sigma continuous time (CT) analog-to-digital converter (ADC). The TX employed a two-point PLL-based architecture with a non-linear PA. The RX achieved a sensitivity of -93 dBm and consumes 9.7 mW, while the TX achieved a 2.97% error vector magnitude (EVM) with 9.4 mW at 0 dBm output power. This design was fabricated in a 0.11 μm complementary metal oxide semiconductor (CMOS) technology and the front-end circuit only occupies 0.24 mm². The measurement results verify the effectiveness and applicability of the proposed BLE transceiver for WSN applications.

A Comparative Analysis of CMUT Receiving Architectures for the Design Optimization of Integrated Transceiver Front Ends.

PubMed

Sautto, Marco; Savoia, Alessandro Stuart; Quaglia, Fabio; Caliano, Giosue; Mazzanti, Andrea

2017-05-01

A formal comparison between fundamental RX amplifier configurations for capacitive micromachined ultrasonic transducers (CMUTs) is proposed in this paper. The impact on both RX and the pulse-echo frequency response and on the output SNR is thoroughly analyzed and discussed. It is shown that the resistive-feedback amplifier yields a bandpass RX frequency response, while both open-loop voltage and capacitive-feedback amplifiers exhibit a low-pass frequency response. For a given power dissipation, it is formally proved that a capacitive-feedback amplifier provides a remarkable SNR improvement against the commonly adopted resistive feedback stage, achieved at the expense of a reduced pulse-echo center frequency, making its use convenient in low-frequency and midfrequency ultrasound imaging applications. The advantage mostly comes from a much lower noise contributed by the active devices, especially with low- Q , broadband transducers. The results of the analysis are applied to the design of a CMUT front end in BIPOLAR-CMOS-DMOS Silicon-on-Insulator technology operating at 10-MHz center frequency. It comprises a low-power RX amplifier, a high-voltage Transmission/Reception switch, and a 100-V TX driver. Extensive electrical characterization, pulse-echo measurements, and imaging results are shown. Compared with previously reported CMUT front ends, this transceiver demonstrates the highest dynamic range and state-of-the-art noise performance with an RX amplifier power dissipation of 1 mW.

The new front-end electronics for the ATLAS Tile Calorimeter Phase 2 Upgrade

NASA Astrophysics Data System (ADS)

Gomes, A.

2016-02-01

We present the plans, design, and performance results to date for the new front-end electronics being developed for the Phase 2 Upgrade of the ATLAS Tile Calorimeter. The front-end electronics will be replaced to address the increased luminosity at the HL-LHC around 2025, as well as to upgrade to faster, more modern components with higher radiation tolerance. The new electronics will operate dead-timelessly, pushing full data sets from each beam crossing to the data acquisition system that resides off-detector. The new on-detector electronics contains five main parts: the front-end boards that connect directly to the photomultiplier tubes; the Main Boards that digitize the data; the Daughter Boards that collect the data streams and contain the high speed optical communication links for writing data to the data acquisition system; a programmable high voltage control system; and a new low voltage power supply. There are different options for implementing these subcomponents, which will be described. The new system contains new features that in the current version include power system redundancy, data collection redundancy, data transmission redundancy with 2 QSFP optical transceivers and Kintex-7 FPGAs with firmware enhanced scheme for single event upset mitigation. To date, we have built a Demonstrator—a fully functional prototype of the new system. Performance results and plans are presented.

I-line stepper based overlay evaluation method for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2018-03-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules additionally require to process the backside of the wafer; thus require an accurate alignment between the front and backside of the wafer. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 µm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8-9]. In this work, the non-contact infrared alignment system of the Nikon® i-line Stepper NSR-SF150 for both alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the offsets between all different FIA's into account, after correcting the wafer rotation induced FIA position errors, hence an overlay for the stacked wafers can be determined. The developed approach has been validated by a standard front side resist in resist experiment. After the successful validation of the developed technique, special wafer stacks with FIA alignment marks in the bonding interface are fabricated and exposed. Following overlay calculation shows an overlay of less than 200 nm, which enables very accurate process condition for highly scaled TSV integration and advanced substrate integration into IHP's 0.25/0.13 µm SiGe:C BiCMOS technology. The developed technique also allows using significantly smaller alignment marks (i.e. standard FIA alignment marks). Furthermore, the presented method is used, in case of wafer bow related overlay tool problems, for the overlay evaluation of the last two metal layers from production wafers prepared in IHP's standard 0.25/0.13 µm SiGe:C BiCMOS technology. In conclusion, the exposure and measurement job can be done with the same tool, minimizing the back to front side/interface top layer misalignment which leads to a significant device performance improvement of backside/TSV integrated components and technologies.

New overlay measurement technique with an i-line stepper using embedded standard field image alignment marks for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2017-06-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules require addition backside processing of the wafer; thus an accurate alignment between the front and backside of the wafer is mandatory. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 μm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8]. Therefore, the available overlay measurement techniques are not suitable if overlay and alignment marks are realized at the bonding interface of a wafer stack which consists of both a silicon device and a silicon carrier wafer. The former used EVG 40NT automated overlay measurement system, which use two opposite positioned microscopes inspecting simultaneous the wafer back and front side, is not capable measuring embedded overlay marks. In this work, the non-contact infrared alignment system of the Nikon i-line Stepper NSR-SF150 for both the alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the offsets between all different FIA's into account, after correcting the wafer rotation induced FIA position errors, hence an overlay for the stacked wafers can be determined. The developed approach has been validated by a standard back to front side application. The overlay was measured and determined using both, the EVG NT40 automated measurement system with special overlay marks and the measurement of the FIA marks of the front and back side layer. A comparison of both results shows mismatches in x and y translations smaller than 200 nm, which is relatively small compared to the overlay tolerances of +/-500 nm for the back to front side process. After the successful validation of the developed technique, special wafer stacks with FIA alignment marks in the bonding interface are fabricated. Due to the super IR light transparency of both doubled side polished wafers, the embedded FIA marks generate a stable and clear signal for accurate x and y wafer coordinate positioning. The FIA marks of the device wafer top layer were measured under standard condition in a developed photoresist mask without IR illumination. Following overlay calculation shows an overlay of less than 200 nm, which enables very accurate process condition for highly scaled TSV integration and advanced substrate integration into IHP's 0.25/0.13 μm SiGe:C BiCMOS technology. The presented method can be applied for both the standard back to front side process technologies and also new temporary and permanent wafer bonding applications.

Passive front-ends for wideband millimeter wave electronic warfare

NASA Astrophysics Data System (ADS)

Jastram, Nathan Joseph

This thesis presents the analysis, design and measurements of novel passive front ends of interest to millimeter wave electronic warfare systems. However, emerging threats in the millimeter waves (18 GHz and above) has led to a push for new systems capable of addressing these threats. At these frequencies, traditional techniques of design and fabrication are challenging due to small size, limited bandwidth and losses. The use of surface micromachining technology for wideband direction finding with multiple element antenna arrays for electronic support is demonstrated. A wideband tapered slot antenna is first designed and measured as an array element for the subsequent arrays. Both 18--36 GHz and 75--110 GHz amplitude only and amplitude/phase two element direction finding front ends are designed and measured. The design of arrays using Butler matrix and Rotman lens beamformers for greater than two element direction finding over W band and beyond using is also presented. The design of a dual polarized high power capable front end for electronic attack over an 18--45 GHz band is presented. To combine two polarizations into the same radiating aperture, an orthomode transducer (OMT) based upon a new double ridge waveguide cross section is developed. To provide greater flexibility in needed performance characteristics, several different turnstile junction matching sections are tested. A modular horn section is proposed to address flexible and ever changing operational requirements, and is designed for performance criteria such as constant gain, beamwidth, etc. A multi-section branch guide coupler and low loss Rotman lens based upon the proposed cross section are also developed. Prototyping methods for the herein designed millimeter wave electronic warfare front ends are investigated. Specifically, both printed circuit board (PCB) prototyping of micromachined systems and 3D printing of conventionally machined horns are presented. A 4--8 GHz two element array with integrated beamformer fabricated using the stacking of PCB boards is shown, and measured results compare favorably with the micromachined front ends. A 3D printed small aperture horn is compared with a conventionally machined horn, and measured results show similar performance with a ten-fold reduction in cost and weight.

Piezoelectric micromachined ultrasonic transducers for fingerprint sensing

NASA Astrophysics Data System (ADS)

Lu, Yipeng

Fingerprint identification is the most prevalent biometric technology due to its uniqueness, universality and convenience. Over the past two decades, a variety of physical mechanisms have been exploited to capture an electronic image of a human fingerprint. Among these, capacitive fingerprint sensors are the ones most widely used in consumer electronics because they are fabricated using conventional complementary metal oxide semiconductor (CMOS) integrated circuit technology. However, capacitive fingerprint sensors are extremely sensitive to finger contamination and moisture. This thesis will introduce an ultrasonic fingerprint sensor using a PMUT array, which offers a potential solution to this problem. In addition, it has the potential to increase security, as it allows images to be collected at various depths beneath the epidermis, providing images of the sub-surface dermis layer and blood vessels. Firstly, PMUT sensitivity is maximized by optimizing the layer stack and electrode design, and the coupling coefficient is doubled via series transduction. Moreover, a broadband PMUT with 97% fractional bandwidth is achieved by utilizing a thinner structure excited at two adjacent mechanical vibration modes with overlapping bandwidth. In addition, we proposed waveguide PMUTs, which function to direct acoustic waves, confine acoustic energy, and provide mechanical protection for the PMUT array. Furthermore, PMUT arrays were fabricated with different processes to form the membrane, including front-side etching with a patterned sacrificial layer, front-side etching with additional anchor, cavity SOI wafers and eutectic bonding. Additionally, eutectic bonding allows the PMUT to be integrated with CMOS circuits. PMUTs were characterized in the mechanical, electrical and acoustic domains. Using transmit beamforming, a narrow acoustic beam was achieved, and high-resolution (sub-100 microm) and short-range (~1 mm) pulse-echo ultrasonic imaging was demonstrated using a steel phantom. Finally, a novel ultrasonic fingerprint sensor was demonstrated using a 24x8 array of 22 MHz PMUTs with 100 microm pitch, fully integrated with 180 nm CMOS circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20x8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D PDMS fingerprint phantom (10 mm by 8 mm) at a 1.2 mm distance from the array.

Design of analog pixels front-end active feedback

NASA Astrophysics Data System (ADS)

Kmon, P.; Kadlubowski, L. A.; Kaczmarczyk, P.

2018-01-01

The paper presents the design of the active feedback used in a charge-sensitive amplifier. The predominant advantages of the presented circuit are its ability for setting wide range of pulse-time widths, small silicon area occupation and low power consumption. The feedback also allows sensor leakage current compensation and, thanks to an additional DC amplifier, it minimizes the output DC voltage variations, which is especially important in the DC coupled recording chain and for processes with limited supply voltage. The paper provides feedback description and its operation principle. The proposed circuit was designed in the CMOS 130nm technology.

The DIRC front-end electronics chain for BaBar

NASA Astrophysics Data System (ADS)

Bailly, P.; Beigbeder, C.; Bernier, R.; Breton, D.; Bonneaud, G.; Caceres, T.; Chase, R.; Chauveau, J.; Del Buono, L.; Dohou, F.; Ducorps, A.; Gastaldi, F.; Genat, J. F.; Hrisoho, A.; Imbert, P.; Lebbolo, H.; Matricon, P.; Oxoby, G.; Renard, C.; Roos, L.; Sen, S.; Thiebaux, C.; Truong, K.; Tocut, V.; Vasileiadis, G.; Va'Vra, J.; Verderi, M.; Warner, D.; Wilson, R. J.; Wormser, G.; Zhang, B.; Zomer, F.

2000-12-01

Recent results from the Front-End electronics of the Detector of Internally Reflected Cerenkov light (DIRC) for the BaBar experiment at SLAC (Stanford, USA) are presented. It measures to better than 1 ns the arrival time of Cerenkov photoelectrons detected in a 11000 phototubes array and their amplitude spectra. It mainly comprises 64-channel DIRC Front-End Boards (DFB) equipped with eight full-custom analog chips performing zero-cross discrimination with 2 mV threshold and pulse shaping, four full-custom digital time to digital chips (TDC) for timing measurements with 500 ps binning and a readout logic selecting hits in the trigger window, and DIRC Crate Controller cards (DCC) serializing the data collected front up to 16 DFBs onto a 1.2 Gb/s optical link. Extensive test results of the pre-production chips are presented, as well as system tests.

All-Dielectric Photonic-Assisted Radio Front-End Technology

NASA Astrophysics Data System (ADS)

Ayazi, Hossein Ali

The threats to civil society posed by high-power electromagnetic weapons are viewed as a grim but real possibility in the world after 11 September 2001. These weapons produce a power surge capable of destroying or damaging sensitive circuitry in electronic systems. Unfortunately, the trend towards circuits with smaller sizes and voltages renders modern electronics highly susceptible to such damage. Radiofrequency communication systems are particularly vulnerable, because the antenna provides a direct port of entry for electromagnetic radiation. In this work, we present a novel type of radiofrequency receiver front end featuring a complete absence of electronic circuitry and metal interconnects, the traditional 'soft spots' of a conventional radiofrequency receiver. The device exploits a dielectric resonator antenna to capture and deliver the radiofrequency signal onto a whispering-gallery mode electro-optic field sensor. The dielectric approach has an added benefit in that it reduces the physical size of the front end, an important benefit in mobile applications.

Improved Space Object Orbit Determination Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

2014-09-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario a sensor in a sun-synchronous LEO orbit, always pointing in the anti-sun direction to achieve optimum illumination conditions for small LEO debris, was simulated. For the space-based scenario the simulations showed a 20 130 % improvement of the accuracy of all orbital parameters when varying the frame rate from 1/3 fps, which is the fastest rate for a typical CCD detector, to 50 fps, which represents the highest rate of scientific CMOS cameras. Changing the epoch registration accuracy from a typical 20.0 ms for a mechanical shutter to 0.025 ms, the theoretical value for the electronic shutter of a CMOS camera, improved the orbit accuracy by 4 to 190 %. The ground-based scenario also benefit from the specific CMOS characteristics, but to a lesser extent.

A 32-channel front-end ASIC for GEM detectors used in beam monitoring applications

NASA Astrophysics Data System (ADS)

Ciciriello, F.; Altieri, P. R.; Corsi, F.; De Robertis, G.; Felici, G.; Loddo, F.; Lorusso, L.; Marzocca, C.; Matarrese, G.; Ranieri, A.; Stamerra, A.

2017-11-01

A multichannel, mixed-signal, front-end ASIC for GEM detectors, intended for beam monitoring in hadron therapy applications, has been designed and prototyped in a standard 0.35 μm CMOS technology. The analog channels are based on the classic CSA + shaper processing chain, followed by a peak detector which can work as an analog memory, to simplifiy the analog-to-digital conversion of the peak voltage of the output pulse, proportional to the energy of the detected event. The available hardware resources include an 8-bit A/D converter and a standard-cell digital part, which manages the read-out procedure, in sparse or serial mode. The ASIC is self-triggered and transfers energy and address data to the external DAQ via a fast 100 MHz LVDS link. Preliminary characterization results show that the non-linearity error is limited to 5% for a maximum input charge of about 70 fC, the measured ENC is about 1400e- and the time jitter of the trigger signal generated in response to an injected charge of 60 fC is close to 200 ps.

A low-power high-sensitivity analog front-end for PPG sensor.

PubMed

Binghui Lin; Atef, Mohamed; Guoxing Wang

2017-07-01

This paper presents a low-power analog front-end (AFE) photoplethysmography (PPG) sensor fabricated in 0.35 μm CMOS process. The AFE amplifies the weak photocurrent from the photodiode (PD) and converts it to a strong voltage at the output. In order to decrease the power consumption, the circuits are designed in subthreshold region; so the total biasing current of the AFE is 10 μ A. Since the large input DC photocurrent is a big issue for the PPG sensing circuit, we apply a DC photocurrent rejection technique by adding a DC current-cancellation loop to reject the large DC photocurrent up to 10 μA. In addition, a pseudo resistor is used to reduce the high-pass corner frequency below 0.5 Hz and Gm-C filter is adapted to reject the out-of-band noise higher than 16 Hz. For the whole sensor, the amplifier chain can achieve a total gain of 140 dBμ and an input integrated noise current of 68.87 pA rms up to 16 Hz.

Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications

NASA Astrophysics Data System (ADS)

Chung, Wen-Yaw; Yang, Chung-Huang; Peng, Kang-Chu; Yeh, M. H.

2003-04-01

This paper presents a modular-based low-voltage analog-front-end processor design in a 0.5mm double-poly double-metal CMOS technology for Ion Sensitive Field Effect Transistor (ISFET)-based sensor and H+ sensing applications. To meet the potentiometric response of the ISFET that is proportional to various H+ concentrations, the constant-voltage and constant current (CVCS) testing configuration has been used. Low-voltage design skills such as bulk-driven input pair, folded-cascode amplifier, bootstrap switch control circuits have been designed and integrated for 1.5V supply and nearly rail-to-rail analog to digital signal processing. Core modules consist of an 8-bit two-step analog-digital converter and bulk-driven pre-amplifiers have been developed in this research. The experimental results show that the proposed circuitry has an acceptable linearity to 0.1 pH-H+ sensing conversions with the buffer solution in the range of pH2 to pH12. The processor has a potential usage in battery-operated and portable healthcare devices and environmental monitoring applications.

Design and evaluation of wide-range and low-power analog front-end enabling body-implanted devices to monitor charge injection properties

NASA Astrophysics Data System (ADS)

Ito, Keita; Uno, Shoma; Goto, Tatsuya; Takezawa, Yoshiki; Harashima, Takuya; Morikawa, Takumi; Nishino, Satoru; Kino, Hisashi; Kiyoyama, Koji; Tanaka, Tetsu

2017-04-01

For safe electrical stimulation with body-implanted devices, the degradation of stimulus electrodes must be considered because it causes the unexpected electrolysis of water and the destruction of tissues. To monitor the charge injection property (CIP) of stimulus electrodes while these devices are implanted, we have proposed a charge injection monitoring system (CIMS). CIMS can safely read out voltages produced by a biphasic current pulse to a stimulus electrode and CIP is calculated from waveforms of the acquired voltages. In this paper, we describe a wide-range and low-power analog front-end (AFE) for CIMS that has variable gain-frequency characteristics and low-power analog-to-digital (A/D) conversion to adjust to the degradation of stimulus electrodes. The designed AFE was fabricated with 0.18 µm CMOS technology and achieved a valuable gain of 20-60 dB, an upper cutoff frequency of 0.2-10 kHz, and low-power interleaving A/D conversion. In addition, we successfully measured the CIP of stimulus electrodes for body-implanted devices using CIMS.

Implementation of a wireless ECG acquisition SoC for IEEE 802.15.4 (ZigBee) applications.

PubMed

Wang, Liang-Hung; Chen, Tsung-Yen; Lin, Kuang-Hao; Fang, Qiang; Lee, Shuenn-Yuh

2015-01-01

This paper presents a wireless biosignal acquisition system-on-a-chip (WBSA-SoC) specialized for electrocardiogram (ECG) monitoring. The proposed system consists of three subsystems, namely, 1) the ECG acquisition node, 2) the protocol for standard IEEE 802.15.4 ZigBee system, and 3) the RF transmitter circuits. The ZigBee protocol is adopted for wireless communication to achieve high integration, applicability, and portability. A fully integrated CMOS RF front end containing a quadrature voltage-controlled oscillator and a 2.4-GHz low-IF (i.e., zero-IF) transmitter is employed to transmit ECG signals through wireless communication. The low-power WBSA-SoC is implemented by the TSMC 0.18-μm standard CMOS process. An ARM-based displayer with FPGA demodulation and an RF receiver with analog-to-digital mixed-mode circuits are constructed as verification platform to demonstrate the wireless ECG acquisition system. Measurement results on the human body show that the proposed SoC can effectively acquire ECG signals.

Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configurations

NASA Astrophysics Data System (ADS)

Ratti, Lodovico; Manghisoni, Massimo; Re, Valerio; Speziali, Valeria

2001-12-01

This study is concerned with the simulation and design of low-noise front-end electronics monolithically integrated on the same high-resistivity substrate as multielectrode silicon detectors, in a process made available by the Istituto per la Ricerca Scientifica e Tecnologica (ITC-IRST) of Trento, Italy. The integrated front-end solutions described in this paper use N-channel JFETs as basic elements. The first one is based upon an all-NJFET charge preamplifier designed to match detector capacitances of a few picofarads and available in both a resistive and a non resistive feedback configuration. In the second solution, a single NJFET in the source-follower configuration is connected to the detector, while its source is wired to an external readout channel through an integrated capacitor.

Architecture of PAU survey camera readout electronics

NASA Astrophysics Data System (ADS)

Castilla, Javier; Cardiel-Sas, Laia; De Vicente, Juan; Illa, Joseph; Jimenez, Jorge; Maiorino, Marino; Martinez, Gustavo

2012-07-01

PAUCam is a new camera for studying the physics of the accelerating universe. The camera will consist of eighteen 2Kx4K HPK CCDs: sixteen for science and two for guiding. The camera will be installed at the prime focus of the WHT (William Herschel Telescope). In this contribution, the architecture of the readout electronics system is presented. Back- End and Front-End electronics are described. Back-End consists of clock, bias and video processing boards, mounted on Monsoon crates. The Front-End is based on patch panel boards. These boards are plugged outside the camera feed-through panel for signal distribution. Inside the camera, individual preamplifier boards plus kapton cable completes the path to connect to each CCD. The overall signal distribution and grounding scheme is shown in this paper.

ALPIDE, the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Mager, M.; ALICE Collaboration

2016-07-01

A new 10 m2 inner tracking system based on seven concentric layers of Monolithic Active Pixel Sensors will be installed in the ALICE experiment during the second long shutdown of LHC in 2019-2020. The monolithic pixel sensors will be fabricated in the 180 nm CMOS Imaging Sensor process of TowerJazz. The ALPIDE design takes full advantage of a particular process feature, the deep p-well, which allows for full CMOS circuitry within the pixel matrix, while at the same time retaining the full charge collection efficiency. Together with the small feature size and the availability of six metal layers, this allowed a continuously active low-power front-end to be placed into each pixel and an in-matrix sparsification circuit to be used that sends only the addresses of hit pixels to the periphery. This approach led to a power consumption of less than 40 mWcm-2, a spatial resolution of around 5 μm, a peaking time of around 2 μs, while being radiation hard to some 1013 1 MeVneq /cm2, fulfilling or exceeding the ALICE requirements. Over the last years of R & D, several prototype circuits have been used to verify radiation hardness, and to optimize pixel geometry and in-pixel front-end circuitry. The positive results led to a submission of full-scale (3 cm×1.5 cm) sensor prototypes in 2014. They are being characterized in a comprehensive campaign that also involves several irradiation and beam tests. A summary of the results obtained and prospects towards the final sensor to instrument the ALICE Inner Tracking System are given.

Toward a fully integrated neurostimulator with inductive power recovery front-end.

PubMed

Mounaïm, Fayçal; Sawan, Mohamad

2012-08-01

In order to investigate new neurostimulation strategies for micturition recovery in spinal cord injured patients, custom implantable stimulators are required to carry-on chronic animal experiments. However, higher integration of the neurostimulator becomes increasingly necessary for miniaturization purposes, power consumption reduction, and for increasing the number of stimulation channels. As a first step towards total integration, we present in this paper the design of a highly-integrated neurostimulator that can be assembled on a 21-mm diameter printed circuit board. The prototype is based on three custom integrated circuits fabricated in High-Voltage (HV) CMOS technology, and a low-power small-scale commercially available FPGA. Using a step-down approach where the inductive voltage is left free up to 20 V, the inductive power and data recovery front-end is fully integrated. In particular, the front-end includes a bridge rectifier, a 20-V voltage limiter, an adjustable series regulator (5 to 12 V), a switched-capacitor step-down DC/DC converter (1:3, 1:2, or 2:3 ratio), as well as data recovery. Measurements show that the DC/DC converter achieves more than 86% power efficiency while providing around 3.9-V from a 12-V input at 1-mA load, 1:3 conversion ratio, and 50-kHz switching frequency. With such efficiency, the proposed step-down inductive power recovery topology is more advantageous than its conventional step-up counterpart. Experimental results confirm good overall functionality of the system.

A CMOS wireless biomolecular sensing system-on-chip based on polysilicon nanowire technology.

PubMed

Huang, C-W; Huang, Y-J; Yen, P-W; Tsai, H-H; Liao, H-H; Juang, Y-Z; Lu, S-S; Lin, C-T

2013-11-21

As developments of modern societies, an on-field and personalized diagnosis has become important for disease prevention and proper treatment. To address this need, in this work, a polysilicon nanowire (poly-Si NW) based biosensor system-on-chip (bio-SSoC) is designed and fabricated by a 0.35 μm 2-Poly-4-Metal (2P4M) complementary metal-oxide-semiconductor (CMOS) process provided by a commercialized semiconductor foundry. Because of the advantages of CMOS system-on-chip (SoC) technologies, the poly-Si NW biosensor is integrated with a chopper differential-difference amplifier (DDA) based analog-front-end (AFE), a successive approximation analog-to-digital converter (SAR ADC), and a microcontroller to have better sensing capabilities than a traditional Si NW discrete measuring system. In addition, an on-off key (OOK) wireless transceiver is also integrated to form a wireless bio-SSoC technology. This is pioneering work to harness the momentum of CMOS integrated technology into emerging bio-diagnosis technologies. This integrated technology is experimentally examined to have a label-free and low-concentration biomolecular detection for both Hepatitis B Virus DNA (10 fM) and cardiac troponin I protein (3.2 pM). Based on this work, the implemented wireless bio-SSoC has demonstrated a good biomolecular sensing characteristic and a potential for low-cost and mobile applications. As a consequence, this developed technology can be a promising candidate for on-field and personalized applications in biomedical diagnosis.

A 14-bit 40-MHz analog front end for CCD application

NASA Astrophysics Data System (ADS)

Jingyu, Wang; Zhangming, Zhu; Shubin, Liu

2016-06-01

A 14-bit, 40-MHz analog front end (AFE) for CCD scanners is analyzed and designed. The proposed system incorporates a digitally controlled wideband variable gain amplifier (VGA) with nearly 42 dB gain range, a correlated double sampler (CDS) with programmable gain functionality, a 14-bit analog-to-digital converter and a programmable timing core. To achieve the maximum dynamic range, the VGA proposed here can linearly amplify the input signal in a gain range from -1.08 to 41.06 dB in 6.02 dB step with a constant bandwidth. A novel CDS takes image information out of noise, and further amplifies the signal accurately in a gain range from 0 to 18 dB in 0.035 dB step. A 14-bit ADC is adopted to quantify the analog signal with optimization in power and linearity. An internal timing core can provide flexible timing for CCD arrays, CDS and ADC. The proposed AFE was fabricated in SMIC 0.18 μm CMOS process. The whole circuit occupied an active area of 2.8 × 4.8 mm2 and consumed 360 mW. When the frequency of input signal is 6.069 MHz, and the sampling frequency is 40 MHz, the signal to noise and distortion (SNDR) is 70.3 dB, the effective number of bits is 11.39 bit. Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044, 61376033), the National High-Tech Program of China (No. 2013AA014103), and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No. ZHD201302).

Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation

NASA Astrophysics Data System (ADS)

Matsukawa, Takashi; Liu, Yongxun; Mori, Takahiro; Morita, Yukinori; Otsuka, Shintaro; O'uchi, Shin-ichi; Fuketa, Hiroshi; Migita, Shinji; Masahara, Meishoku

2017-06-01

The influence of extension doping on parasitic resistance and its variability has been investigated for FinFETs. Electrical characterization of FinFETs and crystallinity evaluation of the doped fin structure are carried out for different fin thicknesses and different donor species for ion implantation, i.e., As and P. Reducing the fin thickness and the use of donor species with a larger mass cause serious degradation in the variability and median value of the parasitic resistance. Crystallinity evaluation by transmission electron microscope reveals that significant crystal defects remain after dopant activation annealing for the cases of smaller fin thickness and the implanted dopant with a larger mass. The unrecovered defects cause serious degradation in the parasitic resistance and its variability. In 1998, he joined the Electrotechnical Laboratory, which is former organization of National Institute of Advanced Industrial Science and Technology (AIST). He has been working on development of front-end process technology, variability issues of the FinFETs and technologies for suppressing the variability. He is now a group leader of the AIST and leads the research on the silicon-based CMOS devices. He is a member of the IEEE Electron Devices Society, and the Japan Society of Applied Physics.

Web-based DAQ systems: connecting the user and electronics front-ends

NASA Astrophysics Data System (ADS)

Lenzi, Thomas

2016-12-01

Web technologies are quickly evolving and are gaining in computational power and flexibility, allowing for a paradigm shift in the field of Data Acquisition (DAQ) systems design. Modern web browsers offer the possibility to create intricate user interfaces and are able to process and render complex data. Furthermore, new web standards such as WebSockets allow for fast real-time communication between the server and the user with minimal overhead. Those improvements make it possible to move the control and monitoring operations from the back-end servers directly to the user and to the front-end electronics, thus reducing the complexity of the data acquisition chain. Moreover, web-based DAQ systems offer greater flexibility, accessibility, and maintainability on the user side than traditional applications which often lack portability and ease of use. As proof of concept, we implemented a simplified DAQ system on a mid-range Spartan6 Field Programmable Gate Array (FPGA) development board coupled to a digital front-end readout chip. The system is connected to the Internet and can be accessed from any web browser. It is composed of custom code to control the front-end readout and of a dual soft-core Microblaze processor to communicate with the client.

A front-end electronic system for large arrays of bolometers

NASA Astrophysics Data System (ADS)

Arnaboldi, C.; Carniti, P.; Cassina, L.; Gotti, C.; Liu, X.; Maino, M.; Pessina, G.; Rosenfeld, C.; Zhu, B. X.

2018-02-01

CUORE is an array of thermal calorimeters composed of 988 crystals held at about 10 mK, whose absorbed energy is read out with semiconductor thermistors. The composition of the crystal is TeO2, and the aim is the study of the double beta decay of 130Te on very long and stable runs. CUPID-0 is an array of 26 Zn82Se crystals with double thermistor readout to study the double beta decay of 82Se. In the present paper, we present an overview of the entire front-end electronic readout chain, from the preamplifier to the anti-aliasing filter. This overview includes motivations, design strategies, circuit implementation and performance results of the electronic system, including other auxiliary yet important elements like power supplies and the slow control communication system. The stringent requirements of stability on the very long experimental runs that are foreseen during CUORE and CUPID-0 operation, are achieved thanks to novel solutions of the front-end preamplifier and of the detector bias circuit setup.

The OPERA muon spectrometer tracking electronics

NASA Astrophysics Data System (ADS)

Ambrosio, M.; Barichello, G.; Brugnera, R.; Carrara, E.; Consiglio, L.; Corradi, A.; Dal Corso, F.; Dusini, S.; Felici, G.; Garfagnini, A.; Manea, C.; Masone, V.; Paoloni, A.; Paoluzzi, G.; Papalino, G.; Parascandolo, P.; Sorrentino, G.; Spinetti, M.; Stanco, L.; Terranova, F.; Votano, L.

2004-11-01

The document describes the front-end electronics that instrument the spectrometer of the OPERA experiment. The spectrometer is made of two separate modules. Each module consists of 22 RPC planes equipped with horizontal and vertical strips readout for a total amount of about 25,000 digital channels. The front end electronics is self-triggered and has single plane readout capability. It is made of three different stages: the Front End Boards (FEBs) system, the Controller Boards (CBs) system and the Timing Boards (TBs) system. The FEB system provides discrimination of the strip incoming signals; a FAST OR output of the input signals is also available for trigger plane signal generation. FEBs discriminated signals are acquired by the CBs system that manages also the communication to the experiment DAQ and Slow Control interface. A Trigger Board allows to operate in both self-trigger (the FEB FAST OR signal starts the plane acquisition) or external-trigger (different conditions can be set on the OR signals generated from different planes) modes.

Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long.more » A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.« less

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

PubMed Central

Kazior, Thomas E.

2014-01-01

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

PubMed

Kazior, Thomas E

2014-03-28

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

Millimeter-wave silicon-based ultra-wideband automotive radar transceivers

NASA Astrophysics Data System (ADS)

Jain, Vipul

Since the invention of the integrated circuit, the semiconductor industry has revolutionized the world in ways no one had ever anticipated. With the advent of silicon technologies, consumer electronics became light-weight and affordable and paved the way for an Information-Communication-Entertainment age. While silicon almost completely replaced compound semiconductors from these markets, it has been unable to compete in areas with more stringent requirements due to technology limitations. One of these areas is automotive radar sensors, which will enable next-generation collision-warning systems in automobiles. A low-cost implementation is absolutely essential for widespread use of these systems, which leads us to the subject of this dissertation---silicon-based solutions for automotive radars. This dissertation presents architectures and design techniques for mm-wave automotive radar transceivers. Several fully-integrated transceivers and receivers operating at 22-29 GHz and 77-81 GHz are demonstrated in both CMOS and SiGe BiCMOS technologies. Excellent performance is achieved indicating the suitability of silicon technologies for automotive radar sensors. The first CMOS 22-29-GHz pulse-radar receiver front-end for ultra-wideband radars is presented. The chip includes a low noise amplifier, I/Q mixers, quadrature voltage-controlled oscillators, pulse formers and variable-gain amplifiers. Fabricated in 0.18-mum CMOS, the receiver achieves a conversion gain of 35-38.1 dB and a noise figure of 5.5-7.4 dB. Integration of multi-mode multi-band transceivers on a single chip will enable next-generation low-cost automotive radar sensors. Two highly-integrated silicon ICs are designed in a 0.18-mum BiCMOS technology. These designs are also the first reported demonstrations of mm-wave circuits with high-speed digital circuits on the same chip. The first mm-wave dual-band frequency synthesizer and transceiver, operating in the 24-GHz and 77-GHz bands, are demonstrated. All circuits except the oscillators are shared between the two bands. A multi-functional injection-locked circuit is used after the oscillators to reconfigure the division ratio inside the phase-locked loop. The synthesizer is suitable for integration in automotive radar transceivers and heterodyne receivers for 94-GHz imaging applications. The transceiver chip includes a dual-band low noise amplifier, a shared downconversion chain, dual-band pulse formers, power amplifiers, a dual-band frequency synthesizer and a high-speed programmable baseband pulse generator. Radar functionality is demonstrated using loopback measurements.

Optical, analog and digital domain architectural considerations for visual communications

NASA Astrophysics Data System (ADS)

Metz, W. A.

2008-01-01

The end of the performance entitlement historically achieved by classic scaling of CMOS devices is within sight, driven ultimately by fundamental limits. Performance entitlements predicted by classic CMOS scaling have progressively failed to be realized in recent process generations due to excessive leakage, increasing interconnect delays and scaling of gate dielectrics. Prior to reaching fundamental limits, trends in technology, architecture and economics will pressure the industry to adopt new paradigms. A likely response is to repartition system functions away from digital implementations and into new architectures. Future architectures for visual communications will require extending the implementation into the optical and analog processing domains. The fundamental properties of these domains will in turn give rise to new architectural concepts. The limits of CMOS scaling and impact on architectures will be briefly reviewed. Alternative approaches in the optical, electronic and analog domains will then be examined for advantages, architectural impact and drawbacks.

Development of a front end controller/heap manager for PHENIX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ericson, M.N.; Allen, M.D.; Musrock, M.S.

1996-12-31

A controller/heap manager has been designed for applicability to all detector subsystem types of PHENIX. the heap manager performs all functions associated with front end electronics control including ADC and analog memory control, data collection, command interpretation and execution, and data packet forming and communication. Interfaces to the unit consist of a timing and control bus, a serial bus, a parallel data bus, and a trigger interface. The topology developed is modular so that many functional blocks are identical for a number of subsystem types. Programmability is maximized through the use of flexible modular functions and implementation using field programmablemore » gate arrays (FPGAs). Details of unit design and functionality will be discussed with particular detail given to subsystems having analog memory-based front end electronics. In addition, mode control, serial functions, and FPGA implementation details will be presented.« less

Facile fabrication of efficient organic CMOS circuits.

PubMed

Dzwilewski, Andrzej; Matyba, Piotr; Edman, Ludvig

2010-01-14

Organic electronic circuits based on a combination of n- and p-type transistors (so-called CMOS circuits) are attractive, since they promise the realization of a manifold of versatile and low-cost electronic devices. Here, we report a novel photoinduced transformation method, which allows for a particularly straightforward fabrication of highly functional organic CMOS circuits. A solution-deposited single-layer film, comprising a mixture of the n-type semiconductor [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) and the p-type semiconductor poly-3-hexylthiophene (P3HT) in a 3:1 mass ratio, was utilized as the common active material in an array of transistors. Selected film areas were exposed to laser light, with the result that the irradiated PCBM monomers were photochemically transformed into a low-solubility and high-mobility dimeric state. Thereafter, the entire film was developed via immersion into a developer solution, which selectively removed the nonexposed, and monomeric, PCBM component. The end result was that the transistors in the exposed film areas are n-type, as dimeric PCBM is the majority component in the active material, while the transistors in the nonexposed film areas are p-type, as P3HT is the sole remaining material. We demonstrate the merit of the method by utilizing the resulting combination of n-type and p-type transistors for the realization of CMOS inverters with a high gain of approximately 35.

Development of a dedicated readout ASIC for TPC based X-ray polarimeter

NASA Astrophysics Data System (ADS)

Zhang, Hongyan; Deng, Zhi; Li, Hong; Liu, Yinong; Feng, Hua

2016-07-01

X-ray polarimetry with time projection chambers was firstly proposed by JK Black in 2007 and has been greatly developed since then. It measured two dimensional photoelectron tracks with one dimensional strip and the other dimension was estimated by the drift time from the signal waveforms. A readout ASIC, APV25, originally developed for CMS silicon trackers was used and has shown some limitations such as waveform sampling depth. A dedicated ASIC was developed for TPC based X-ray polarimeters in this paper. It integrated 32 channel circuits and each channel consisted of an analog front-end and a waveform sampler based on switched capacitor array. The analog front-end has a charge sensitive preamplifier with a gain of 25 mV/fC, a CR-RC shaper with a peaking time of 25 ns, a baseline holder and a discriminator for self-triggering. The SCA has a buffer latency of 3.2 μs with 64 cells operating at 20 MSPS. The ASIC was fabricated in a 0.18 μm CMOS process. The equivalent noise charge (ENC) of the analog front-end was measured to be 274.8 e+34.6 e/pF. The effective resolution of the SCA was 8.8 bits at sampling rate up to 50 MSPS. The total power consumption was 2.8 mW per channel. The ASIC was also tested with real TPC detectors and two dimensional photoelectron tracks have been successfully acquired. More tests and analysis on the sensitivity to the polarimetry are undergoing and will be presented in this paper.

Design of a Multichannel Low-Noise Front-End Readout ASIC Dedicated to CZT Detectors for PET Imaging

NASA Astrophysics Data System (ADS)

Gao, W.; Liu, H.; Gan, B.; Wei, T.; Gao, D.; Hu, Y.

2014-10-01

In this paper, we present the design and preliminary results of a novel low-noise front-end readout application-specific integrated circuit (ASIC) for a PET imaging system whose objective is to achieve the following performances: the spatial resolution of 1 mm3, the detection efficiency of 15% and the time resolution of 1 ns. A cascode amplifier based on the PMOS input transistor is selected to realize the charge-sensitive amplifier (CSA) for the sake of good noise performances. The output of the CSA is split into two branches. One is connected to a slow shaper for energy measurements. The other is connected to a fast shaper for time acquisition. A novel monostable circuits is designed to adjust the time delay of the trigger signals so that the peak value of the shaped voltages can be sampled and stored. An eight-channel front-end readout prototype chip is designed and implemented in 0.35 μm CMOS process. The die size is 2.286 mm ×2.282 mm. The input range of the ASIC is from 2000 e- to 180000 e-, reflecting to the energy level of the gamma ray from 11.2 keV to 1 MeV. The gain of the readout channel is 65 mV/fC. The tested result of ENC is 86.5 e- at zero farad plus 9.3 e- per picofarad. The nonlinearity is less than 3%. The crosstalk is less than 2%. The power dissipation is about 3 mW/channel.

A novel pseudo resistor structure for biomedical front-end amplifiers.

PubMed

Yu-Chieh Huang; Tzu-Sen Yang; Shun-Hsi Hsu; Xin-Zhuang Chen; Jin-Chern Chiou

2015-08-01

This study proposes a novel pseudo resistor structure with a tunable DC bias voltage for biomedical front-end amplifiers (FEAs). In the proposed FEA, the high-pass filter composed of differential difference amplifier and a pseudo resistor is implemented. The FEA is manufactured by using a standard TSMC 0.35 μm CMOS process. In this study, three types FEAs included three different pseudo resistor are simulated, fabricated and measured for comparison and electrocorticography (ECoG) measurement, and all the results show the proposed pseudo resistor is superior to other two types in bandwidth. In chip implementation, the lower and upper cutoff frequencies of the high-pass filter with the proposed pseudo resistor are 0.15 Hz and 4.98 KHz, respectively. It also demonstrates lower total harmonic distortion performance of -58 dB at 1 kHz and higher stability with wide supply range (1.8 V and 3.3 V) and control voltage range (0.9 V and 1.65 V) than others. Moreover, the FEA with the proposed pseudo successfully recorded spike-and-wave discharges of ECoG signal in in vivo experiment on rat with pentylenetetrazol-induced seizures.

A dual slope charge sampling analog front-end for a wireless neural recording system.

PubMed

Lee, Seung Bae; Lee, Byunghun; Gosselin, Benoit; Ghovanloo, Maysam

2014-01-01

This paper presents a novel dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which amplifies neural signals by taking advantage of the charge sampling concept for analog signal conditioning, such as amplification and filtering. The presented DSCS-AFE achieves amplification, filtering, and sampling in a simultaneous fashion, while consuming very small amount of power. The output of the DSCS-AFE produces a pulse width modulated (PWM) signal that is proportional to the input voltage amplitude. A circular shift register (CSR) utilizes time division multiplexing (TDM) of the PWM pulses to create a pseudo-digital TDM-PWM signal that can feed a wireless transmitter. The 8-channel system-on-a-chip was fabricated in a 0.35-μm CMOS process, occupying 2.4 × 2.1 mm(2) and consuming 255 μW from a 1.8V supply. Measured input-referred noise for the entire system, including the FPGA in order to recover PWM signal is 6.50 μV(rms) in the 288 Hz~10 kHz range. For each channel, sampling rate is 31.25 kHz, and power consumption is 31.8 μW.

Geostationary payload concepts for personal satellite communications

NASA Technical Reports Server (NTRS)

Benedicto, J.; Rinous, P.; Roberts, I.; Roederer, A.; Stojkovic, I.

1993-01-01

This paper reviews candidate satellite payload architectures for systems providing world-wide communication services to mobile users equipped with hand-held terminals based on large geostationary satellites. There are a number of problems related to the payload architecture, on-board routing and beamforming, and the design of the S-band Tx and L-band Rx antenna and front ends. A number of solutions are outlined, based on trade-offs with respect to the most significant performance parameters such as capacity, G/T, flexibility of routing traffic to beams and re-configuration of the spot-beam coverage, and payload mass and power. Candidate antenna and front-end configurations were studied, in particular direct radiating arrays, arrays magnified by a reflector and active focused reflectors with overlapping feed clusters for both transmit (multimax) and receive (beam synthesis). Regarding the on-board routing and beamforming sub-systems, analog techniques based on banks of SAW filters, FET or CMOS switches and cross-bar fixed and variable beamforming are compared with a hybrid analog/digital approach based on Chirp Fourier Transform (CFT) demultiplexer combined with digital beamforming or a fully digital processor implementation, also based on CFT demultiplexing.

Picosecond Resolution Time-to-Digital Converter Using Gm-C Integrator and SAR-ADC

NASA Astrophysics Data System (ADS)

Xu, Zule; Miyahara, Masaya; Matsuzawa, Akira

2014-04-01

A picosecond resolution time-to-digital converter (TDC) is presented. The resolution of a conventional delay chain TDC is limited by the delay of a logic buffer. Various types of recent TDCs are successful in breaking this limitation, but they require a significant calibration effort to achieve picosecond resolution with a sufficient linear range. To address these issues, we propose a simple method to break the resolution limitation without any calibration: a Gm-C integrator followed by a successive approximation register analog-to-digital converter (SAR-ADC). This translates the time interval into charge, and then the charge is quantized. A prototype chip was fabricated in 90 nm CMOS. The measurement results reveal a 1 ps resolution, a -0.6/0.7 LSB differential nonlinearity (DNL), a -1.1/2.3 LSB integral nonlinearity (INL), and a 9-bit range. The measured 11.74 ps single-shot precision is caused by the noise of the integrator. We analyze the noise of the integrator and propose an improved front-end circuit to reduce this noise. The proposal is verified by simulations showing the maximum single-shot precision is less than 1 ps. The proposed front-end circuit can also diminish the mismatch effects.

A Dual Slope Charge Sampling Analog Front-End for a Wireless Neural Recording System

PubMed Central

Lee, Seung Bae; Lee, Byunghun; Gosselin, Benoit

2015-01-01

This paper presents a novel dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which amplifies neural signals by taking advantage of the charge sampling concept for analog signal conditioning, such as amplification and filtering. The presented DSCS-AFE achieves amplification, filtering, and sampling in a simultaneous fashion, while consuming very small amount of power. The output of the DSCS-AFE produces a pulse width modulated (PWM) signal that is proportional to the input voltage amplitude. A circular shift register (CSR) utilizes time division multiplexing (TDM) of the PWM pulses to create a pseudo-digital TDM-PWM signal that can feed a wireless transmitter. The 8-channel system-on-a-chip was fabricated in a 0.35-µm CMOS process, occupying 2.4 × 2.1 mm2 and consuming 255 µW from a 1.8V supply. Measured input-referred noise for the entire system, including the FPGA in order to recover PWM signal is 6.50 µVrms in the 288 Hz~10 kHz range. For each channel, sampling rate is 31.25 kHz, and power consumption is 31.8 µW. PMID:25570655

CMOS sensors for atmospheric imaging

NASA Astrophysics Data System (ADS)

Pratlong, Jérôme; Burt, David; Jerram, Paul; Mayer, Frédéric; Walker, Andrew; Simpson, Robert; Johnson, Steven; Hubbard, Wendy

2017-09-01

Recent European atmospheric imaging missions have seen a move towards the use of CMOS sensors for the visible and NIR parts of the spectrum. These applications have particular challenges that are completely different to those that have driven the development of commercial sensors for applications such as cell-phone or SLR cameras. This paper will cover the design and performance of general-purpose image sensors that are to be used in the MTG (Meteosat Third Generation) and MetImage satellites and the technology challenges that they have presented. We will discuss how CMOS imagers have been designed with 4T pixel sizes of up to 250 μm square achieving good charge transfer efficiency, or low lag, with signal levels up to 2M electrons and with high line rates. In both devices a low noise analogue read-out chain is used with correlated double sampling to suppress the readout noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. Radiation hardness is a particular challenge for CMOS detectors and both of these sensors have been designed to be fully radiation hard with high latch-up and single-event-upset tolerances, which is now silicon proven on MTG. We will also cover the impact of ionising radiation on these devices. Because with such large pixels the photodiodes have a large open area, front illumination technology is sufficient to meet the detection efficiency requirements but with thicker than standard epitaxial silicon to give improved IR response (note that this makes latch up protection even more important). However with narrow band illumination reflections from the front and back of the dielectric stack on the top of the sensor produce Fabry-Perot étalon effects, which have been minimised with process modifications. We will also cover the addition of precision narrow band filters inside the MTG package to provide a complete imaging subsystem. Control of reflected light is also critical in obtaining the required optical performance and this has driven the development of a black coating layer that can be applied between the active silicon regions.

Front-end electronics and DAQ for the EURITRACK tagged neutron inspection system

NASA Astrophysics Data System (ADS)

Lunardon, M.; Bottosso, C.; Fabris, D.; Moretto, S.; Nebbia, G.; Pesente, S.; Viesti, G.; Bigongiari, A.; Colonna, A.; Tintori, C.; Valkovic, V.; Sudac, D.; Peerani, P.; Sequeira, V.; Salvato, M.

2007-08-01

The EURopean Illicit TRAfficing Countermeasures Kit (EURITRACK) Front-End and Data Acquisition System is a compact set of VME boards interfaced with a standard PC. The system is part of a cargo container inspection portal based on the tagged neutrons technique. The front-end processes all detector signals and checks coincidences between any of the 64 pixels of the alpha particle detector and any gamma-ray signals in 22 NaI(Tl) scintillators. The system is capable of handling the data flow at neutron flux up to the portal limiting value of 108 neutrons/second. Some typical applications are presented.

The Argonne CDF Group

Science.gov Websites

calorimeter, Shower Max., Preshower, Crack Chambers (1979-present) Run II Upgrade: Front end electronics (QIE , Preshower electronics and DAQ Support for Level-2 electron and photon triggers (RECES and ISO) Deputy Head

Front-end Electronics for Unattended Measurement (FEUM). Results of Prototype Evaluation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conrad, Ryan C.; Keller, Daniel T.; Morris, Scott J.

2015-07-01

The International Atomic Energy Agency (IAEA) deploys unattended monitoring systems to provide continuous monitoring of nuclear material within safeguarded facilities around the world. As the number of unattended monitoring instruments increases, the IAEA is challenged to become more efficient in the implementation of those systems. In 2010, the IAEA initiated the Front-End Electronics for Unattended Measurement (FEUM) project with the goals of greater flexibility in the interfaces to various sensors and data acquisition systems, and improved capabilities for remotely located sensors (e.g., where sensor and front-end electronics might be separated by tens of meters). In consultation with the IAEA, amore » technical evaluation of a candidate FEUM device produced by a commercial vendor has been performed. This evaluation assessed the device against the IAEA’s original technical specifications and a broad range of important parameters that include sensor types, cable lengths and types, industrial electromagnetic noise that can degrade signals from remotely located detectors, and high radiation fields. Testing data, interpretation, findings and recommendations are provided.« less

A SPAD-based 3D imager with in-pixel TDC for 145ps-accuracy ToF measurement

NASA Astrophysics Data System (ADS)

Vornicu, I.; Carmona-Galán, R.; Rodríguez-Vázquez, Á.

2015-03-01

The design and measurements of a CMOS 64 × 64 Single-Photon Avalanche-Diode (SPAD) array with in-pixel Time-to-Digital Converter (TDC) are presented. This paper thoroughly describes the imager at architectural and circuit level with particular emphasis on the characterization of the SPAD-detector ensemble. It is aimed to 2D imaging and 3D image reconstruction in low light environments. It has been fabricated in a standard 0.18μm CMOS process, i. e. without high voltage or low noise features. In these circumstances, we are facing a high number of dark counts and low photon detection efficiency. Several techniques have been applied to ensure proper functionality, namely: i) time-gated SPAD front-end with fast active-quenching/recharge circuit featuring tunable dead-time, ii) reverse start-stop scheme, iii) programmable time resolution of the TDC based on a novel pseudo-differential voltage controlled ring oscillator with fast start-up, iv) a global calibration scheme against temperature and process variation. Measurements results of individual SPAD-TDC ensemble jitter, array uniformity and time resolution programmability are also provided.

An NFC-Enabled CMOS IC for a Wireless Fully Implantable Glucose Sensor.

PubMed

DeHennis, Andrew; Getzlaff, Stefan; Grice, David; Mailand, Marko

2016-01-01

This paper presents an integrated circuit (IC) that merges integrated optical and temperature transducers, optical interface circuitry, and a near-field communication (NFC)-enabled digital, wireless readout for a fully passive implantable sensor platform to measure glucose in people with diabetes. A flip-chip mounted LED and monolithically integrated photodiodes serve as the transduction front-end to enable fluorescence readout. A wide-range programmable transimpedance amplifier adapts the sensor signals to the input of an 11-bit analog-to-digital converter digitizing the measurements. Measurement readout is enabled by means of wireless backscatter modulation to a remote NFC reader. The system is able to resolve current levels of less than 10 pA with a single fluorescent measurement energy consumption of less than 1 μJ. The wireless IC is fabricated in a 0.6-μm-CMOS process and utilizes a 13.56-MHz-based ISO15693 for passive wireless readout through a NFC interface. The IC is utilized as the core interface to a fluorescent, glucose transducer to enable a fully implantable sensor-based continuous glucose monitoring system.

Design and performance of a custom ASIC digitizer for wire chamber readout in 65 nm CMOS technology

NASA Astrophysics Data System (ADS)

Lee, M. J.; Brown, D. N.; Chang, J. K.; Ding, D.; Gnani, D.; Grace, C. R.; Jones, J. A.; Kolomensky, Y. G.; von der Lippe, H.; Mcvittie, P. J.; Stettler, M. W.; Walder, J.-P.

2015-06-01

We present the design and performance of a prototype ASIC digitizer for integrated wire chamber readout, implemented in 65 nm commercial CMOS technology. Each channel of the 4-channel prototype is composed of two 16-bit Time-to-Digital Converters (TDCs), one 8-bit Analog-to-Digital Converter (ADC), a front-end preamplifier and shaper, plus digital and analog buffers that support a variety of digitization chains. The prototype has a multiplexed digital backend that executes a state machine, distributes control and timing signals, and buffers data for serial output. Laboratory bench tests measure the absolute TDC resolution between 74 ps and 480 ps, growing with the absolute delay, and a relative time resolution of 19 ps. Resolution outliers due to cross-talk between clock signals and supply or reference voltages are seen. After calibration, the ADC displays good linearity and noise performance, with an effective number of bits of 6.9. Under normal operating conditions the circuit consumes 32 mW per channel. Potential design improvements to address the resolution drift and tails are discussed.

Precision tracking with a single gaseous pixel detector

NASA Astrophysics Data System (ADS)

Tsigaridas, S.; van Bakel, N.; Bilevych, Y.; Gromov, V.; Hartjes, F.; Hessey, N. P.; de Jong, P.; Kluit, R.

2015-09-01

The importance of micro-pattern gaseous detectors has grown over the past few years after successful usage in a large number of applications in physics experiments and medicine. We develop gaseous pixel detectors using micromegas-based amplification structures on top of CMOS pixel readout chips. Using wafer post-processing we add a spark-protection layer and a grid to create an amplification region above the chip, allowing individual electrons released above the grid by the passage of ionising radiation to be recorded. The electron creation point is measured in 3D, using the pixel position for (x, y) and the drift time for z. The track can be reconstructed by fitting a straight line to these points. In this work we have used a pixel-readout-chip which is a small-scale prototype of Timepix3 chip (designed for both silicon and gaseous detection media). This prototype chip has several advantages over the existing Timepix chip, including a faster front-end (pre-amplifier and discriminator) and a faster TDC which reduce timewalk's contribution to the z position error. Although the chip is very small (sensitive area of 0.88 × 0.88mm2), we have built it into a detector with a short drift gap (1.3 mm), and measured its tracking performance in an electron beam at DESY. We present the results obtained, which lead to a significant improvement for the resolutions with respect to Timepix-based detectors.

Monolithic CMUT on CMOS Integration for Intravascular Ultrasound Applications

PubMed Central

Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F. Levent

2012-01-01

One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter based volumetric imaging arrays where the elements need to be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom designed CMOS receiver electronics from a commercial IC foundry. The CMUT on CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT to CMOS interconnection. This CMUT to CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire bonding method. Characterization experiments indicate that the CMUT on CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Experiments on a 1.6 mm diameter dual-ring CMUT array with a 15 MHz center frequency show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging CTOs located 1 cm away from the CMUT array. PMID:23443701

Recent advancements towards green optical networks

NASA Astrophysics Data System (ADS)

Davidson, Alan; Glesk, Ivan; Buis, Adrianus; Wang, Junjia; Chen, Lawrence

2014-12-01

Recent years have seen a rapid growth in demand for ultra high speed data transmission with end users expecting fast, high bandwidth network access. With this rapid growth in demand, data centres are under pressure to provide ever increasing data rates through their networks and at the same time improve the quality of data handling in terms of reduced latency, increased scalability and improved channel speed for users. However as data rates increase, present technology based on well-established CMOS technology is becoming increasingly difficult to scale and consequently data networks are struggling to satisfy current network demand. In this paper the interrelated issues of electronic scalability, power consumption, limited copper interconnect bandwidth and the limited speed of CMOS electronics will be explored alongside the tremendous bandwidth potential of optical fibre based photonic networks. Some applications of photonics to help alleviate the speed and latency in data networks will be discussed.

Efficient storage, computation, and exposure of computer-generated holograms by electron-beam lithography.

PubMed

Newman, D M; Hawley, R W; Goeckel, D L; Crawford, R D; Abraham, S; Gallagher, N C

1993-05-10

An efficient storage format was developed for computer-generated holograms for use in electron-beam lithography. This method employs run-length encoding and Lempel-Ziv-Welch compression and succeeds in exposing holograms that were previously infeasible owing to the hologram's tremendous pattern-data file size. These holograms also require significant computation; thus the algorithm was implemented on a parallel computer, which improved performance by 2 orders of magnitude. The decompression algorithm was integrated into the Cambridge electron-beam machine's front-end processor.Although this provides much-needed ability, some hardware enhancements will be required in the future to overcome inadequacies in the current front-end processor that result in a lengthy exposure time.

Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

NASA Astrophysics Data System (ADS)

Becerra-Alvarez, Edwin C.; Sandoval-Ibarra, Federico; de la Rosa, José M.

2009-05-01

This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF<2.8dB, S21>13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.

System-level considerations for the front-end readout ASIC in the CBM experiment from the power supply perspective

NASA Astrophysics Data System (ADS)

Kasinski, K.; Koczon, P.; Ayet, S.; Löchner, S.; Schmidt, C. J.

2017-03-01

New fixed target experiments using high intensity beams with energy up to 10 AGeV from the SIS100 synchrotron presently being constructed at FAIR/GSI are under preparation. Most of the readout electronics and power supplies are expected to be exposed to a very high flux of nuclear reaction products and have to be radiation tolerant up to 3 MRad (TID) and sustain up to 1014/cm2 of 1 MeV neutron equivalent in their life time. Moreover, the mostly minimum ionising particles under investigation leave very little signal in the sensors. Therefore very low noise level amplitude measurements are required by the front-end electronics for effective tracking. Sensor and interconnecting micro-cable capacitance and series resistance in conjunction with intrinsic noise of the charge sensitive amplifier are dominant noise sources in the system. However, the single-ended architecture of the amplifiers employed for the charge processing channels implies a potential problem with noise contributions from power supply sources. Strict system-level constraints leave very little freedom in selecting a power supply structure optimal with respect to: power efficiency, cooling capabilities and power density on modules, but also noise injection to the front-end via the power supply lines. Design of the power supply and distribution system of the Silicon Tracking System in the CBM experiment together with details on the front-end ASICs (STS -XYTER2) and measurement results of power supply and conditioning electronics (selected DC/DC converter and LDO regulators) are presented.

Front-end electronics for the LZ experiment

NASA Astrophysics Data System (ADS)

Morad, James; LZ Collaboration

2016-03-01

LZ is a second generation direct dark matter detection experiment with 5.6 tonnes of liquid xenon active target, which will be instrumented as a two-phase time projection chamber (TPC). The peripheral xenon outside the active TPC (``skin'') will also be instrumented. In addition, there will be a liquid scintillator based outer veto surrounding the main cryostat. All of these systems will be read out using photomultiplier tubes. I will present the designs for front-end electronics for all these systems, which have been optimized for shaping times, gains, and low noise. Preliminary results from prototype boards will also be presented.

A Charge Sensitive Pre-Amplifier for Smart Point-of-Care Devices Employing Polymer Based Lab-on-a-Chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hanfeng; Britton, Charles; Quaiyum, Farhan

With increasing emphasis on implantable and portable medical devices, low-power, small-chip-area sensor readout system realized in lab-on-a-chip (LOC) platform is gaining more and more importance these days. The main building blocks of the LOC system include a front-end transducer that generates an electrical signal in response to the presence of an analyte of interest, signal processing electronics to process the signal to comply with a specific transmission protocol and a low-power transmitter, all realized in a single integrated circuit platform. Low power consumption and compactness of the components are essential requirements of the LOC system. This paper presents a novelmore » charge sensitive pre-amplifier developed in a standard 180-nm CMOS process suitable for implementing in an LOC platform. The pre-amplifier converts the charge generated by a pyroelectric transducer into a voltage signal, which provides a measurement of the temperature variation in biological fluids. The proposed design is capable of providing 0.8-mV/pC gain while consuming only 2.1 μW of power. Finally, the pre-amplifier composed of integrated components occupies an area of 0.038 mm 2.« less

A Charge Sensitive Pre-Amplifier for Smart Point-of-Care Devices Employing Polymer Based Lab-on-a-Chip

DOE PAGES

Wang, Hanfeng; Britton, Charles; Quaiyum, Farhan; ...

2018-01-01

With increasing emphasis on implantable and portable medical devices, low-power, small-chip-area sensor readout system realized in lab-on-a-chip (LOC) platform is gaining more and more importance these days. The main building blocks of the LOC system include a front-end transducer that generates an electrical signal in response to the presence of an analyte of interest, signal processing electronics to process the signal to comply with a specific transmission protocol and a low-power transmitter, all realized in a single integrated circuit platform. Low power consumption and compactness of the components are essential requirements of the LOC system. This paper presents a novelmore » charge sensitive pre-amplifier developed in a standard 180-nm CMOS process suitable for implementing in an LOC platform. The pre-amplifier converts the charge generated by a pyroelectric transducer into a voltage signal, which provides a measurement of the temperature variation in biological fluids. The proposed design is capable of providing 0.8-mV/pC gain while consuming only 2.1 μW of power. Finally, the pre-amplifier composed of integrated components occupies an area of 0.038 mm 2.« less

Upgraded Readout Electronics for the ATLAS Liquid Argon Calorimeters at the High Luminosity LHC

NASA Astrophysics Data System (ADS)

Andeen, Timothy R.; ATLAS Liquid Argon Calorimeter Group

2012-12-01

The ATLAS liquid-argon calorimeters produce a total of 182,486 signals which are digitized and processed by the front-end and back-end electronics at every triggered event. In addition, the front-end electronics sum analog signals to provide coarsely grained energy sums, called trigger towers, to the first-level trigger system, which is optimized for nominal LHC luminosities. However, the pile-up background expected during the high luminosity phases of the LHC will be increased by factors of 3 to 7. An improved spatial granularity of the trigger primitives is therefore proposed in order to improve the identification performance for trigger signatures, like electrons or photons, at high background rejection rates. For the first upgrade phase in 2018, new Liquid Argon Trigger Digitizer Boards are being designed to receive higher granularity signals, digitize them on detector and send them via fast optical links to a new, off-detector digital processing system. The digital processing system applies digital filtering and identifies significant energy depositions. The refined trigger primitives are then transmitted to the first level trigger system to extract improved trigger signatures. The general concept of the upgraded liquid-argon calorimeter readout together with the various electronics components to be developed for such a complex system is presented. The research activities and architectural studies undertaken by the ATLAS Liquid Argon Calorimeter Group are described, particularly details of the on-going design of mixed-signal front-end electronics, of radiation tolerant optical-links, and of the high-speed off-detector digital processing system.

Low-power low-noise mixed-mode VLSI ASIC for infinite dynamic range imaging applications

NASA Astrophysics Data System (ADS)

Turchetta, Renato; Hu, Y.; Zinzius, Y.; Colledani, C.; Loge, A.

1998-11-01

Solid state solutions for imaging are mainly represented by CCDs and, more recently, by CMOS imagers. Both devices are based on the integration of the total charge generated by the impinging radiation, with no processing of the single photon information. The dynamic range of these devices is intrinsically limited by the finite value of noise. Here we present the design of an architecture which allows efficient, in-pixel, noise reduction to a practically zero level, thus allowing infinite dynamic range imaging. A detailed calculation of the dynamic range is worked out, showing that noise is efficiently suppressed. This architecture is based on the concept of single-photon counting. In each pixel, we integrate both the front-end, low-noise, low-power analog part and the digital part. The former consists of a charge preamplifier, an active filter for optimal noise bandwidth reduction, a buffer and a threshold comparator, and the latter is simply a counter, which can be programmed to act as a normal shift register for the readout of the counters' contents. Two different ASIC's based on this concept have been designed for different applications. The first one has been optimized for silicon edge-on microstrips detectors, used in a digital mammography R and D project. It is a 32-channel circuit, with a 16-bit binary static counter.It has been optimized for a relatively large detector capacitance of 5 pF. Noise has been measured to be equal to 100 + 7*Cd (pF) electron rms with the digital part, showing no degradation of the noise performances with respect to the design values. The power consumption is 3.8mW/channel for a peaking time of about 1 microsecond(s) . The second circuit is a prototype for pixel imaging. The total active area is about (250 micrometers )**2. The main differences of the electronic architecture with respect to the first prototype are: i) different optimization of the analog front-end part for low-capacitance detectors, ii) in- pixel 4-bit comparator-offset compensation, iii) 15-bit pseudo-random counter. The power consumption is 255 (mu) W/channel for a peaking time of 300 ns and an equivalent noise charge of 185 + 97*Cd electrons rms. Simulation and experimental result as well as imaging results will be presented.

A Test Apparatus for the MAJORANA DEMONSTRATOR Front-end Electronics

NASA Astrophysics Data System (ADS)

Singh, Harjit; Loach, James; Poon, Alan

2012-10-01

One of the most important experimental programs in neutrino physics is the search for neutrinoless double-beta decay. The MAJORANA collaboration is searching for this rare nuclear process in the Ge-76 isotope using HPGe detectors. Each detector is instrumented with high-performance electronics to read out and amplify the signals. The part of the electronics close to the detectors, consisting of a novel front-end circuit, cables and connectors, is made of radio-pure materials and is exceedingly delicate. In this work a dedicated test apparatus was created to benchmark the performance of the electronics before installation in the experiment. The apparatus was designed for cleanroom use, with fixtures to hold the components without contaminating them, and included the electronics necessary for power and readout. In addition to testing, the station will find longer term use in development of future versions of the electronics.

Monolithic CMUT-on-CMOS integration for intravascular ultrasound applications.

PubMed

Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F Levent

2011-12-01

One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter-based volumetric imaging arrays, for which the elements must be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom-designed CMOS receiver electronics from a commercial IC foundry. The CMUT-on-CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low-temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT-to-CMOS interconnection. This CMUT-to-CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire-bonding method. Characterization experiments indicate that the CMUT-on-CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Ex- periments on a 1.6-mm-diameter dual-ring CMUT array with a center frequency of 15 MHz show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging chronic total occlusions located 1 cm from the CMUT array.

Fundamental performance differences of CMOS and CCD imagers: part V

NASA Astrophysics Data System (ADS)

Janesick, James R.; Elliott, Tom; Andrews, James; Tower, John; Pinter, Jeff

2013-02-01

Previous papers delivered over the last decade have documented developmental progress made on large pixel scientific CMOS imagers that match or surpass CCD performance. New data and discussions presented in this paper include: 1) a new buried channel CCD fabricated on a CMOS process line, 2) new data products generated by high performance custom scientific CMOS 4T/5T/6T PPD pixel imagers, 3) ultimate CTE and speed limits for large pixel CMOS imagers, 4) fabrication and test results of a flight 4k x 4k CMOS imager for NRL's SoloHi Solar Orbiter Mission, 5) a progress report on ultra large stitched Mk x Nk CMOS imager, 6) data generated by on-chip sub-electron CDS signal chain circuitry used in our imagers, 7) CMOS and CMOSCCD proton and electron radiation damage data for dose levels up to 10 Mrd, 8) discussions and data for a new class of PMOS pixel CMOS imagers and 9) future CMOS development work planned.

3-D readout-electronics packaging for high-bandwidth massively paralleled imager

DOEpatents

Kwiatkowski, Kris; Lyke, James

2007-12-18

Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure (a "mirror cube"). An array of photo-sensitive cells are disposed on a stacked CMOS chip's surface at a 45.degree. angle from light reflecting mirror surfaces formed on a neighboring CMOS chip surface. Image processing electronics are held within the stacked CMOS chip layers. Electrical connections couple each of said stacked CMOS chip layers and a distribution grid, the connections for distributing power and signals to components associated with each stacked CSMO chip layer.

PMF: The front end electronic of the ALFA detector

NASA Astrophysics Data System (ADS)

Barrillon, P.; Blin, S.; Cheikali, C.; Cuisy, D.; Gaspard, M.; Fournier, D.; Heller, M.; Iwanski, W.; Lavigne, B.; De la Taille, C.; Puzo, P.; Socha, J.-L.

2010-11-01

The front end electronic (PMF) of the future ATLAS luminometer is described here. It is composed of a MAPMT and a compact stack of three PCBs, which deliver high voltage, route and read out of the output signals. The third board contains an FPGA and MAROC, a 64-channel ASIC, which can correct the non-uniformity of the MAPMT channels gain, thanks to a variable gain preamplifier. Its main role is to shape and discriminate the input signals at 1/3 photo-electron and produce 64 trigger outputs. Laboratory tests performed on prototype and pre-series PMFs have showed performances in good agreement with the requirements and have fulfilled the approval criteria for the final production of all elements.

The HADES-RICH upgrade using Hamamatsu H12700 MAPMTs with DiRICH FEE + Readout

NASA Astrophysics Data System (ADS)

Patel, V.; Traxler, M.

2018-03-01

The High Acceptance Di-Electron Spectrometer (HADES) is operational since the year 2000 and uses a hadron blind RICH detector for electron identification. The RICH photon detector is currently replaced by Hamamatsu H12700 MAPMTs with a readout system based on the DiRICH front-end module. The electronic readout chain is being developed as a joint effort of the HADES-, CBM- and PANDA collaborations and will also be used in the photon detectors for the upcoming Compressed Baryonic Matter (CBM) and PANDA experiments at FAIR . This article gives a brief overview on the photomultipliers and their quality assurance test measurements, as well as first measurements of the new DiRICH front-end module in final configurations.

Micropower CMOS Integrated Low-Noise Amplification, Filtering, and Digitization of Multimodal Neuropotentials

PubMed Central

Mollazadeh, Mohsen; Murari, Kartikeya; Cauwenberghs, Gert; Thakor, Nitish

2009-01-01

Electrical activity in the brain spans a wide range of spatial and temporal scales, requiring simultaneous recording of multiple modalities of neurophysiological signals in order to capture various aspects of brain state dynamics. Here, we present a 16-channel neural interface integrated circuit fabricated in a 0.5 μm 3M2P CMOS process for selective digital acquisition of biopotentials across the spectrum of neural signal modalities in the brain, ranging from single spike action potentials to local field potentials (LFP), electrocorticograms (ECoG), and electroencephalograms (EEG). Each channel is composed of a tunable bandwidth, fixed gain front-end amplifier and a programmable gain/resolution continuous-time incremental ΔΣ analog-to-digital converter (ADC). A two-stage topology for the front-end voltage amplifier with capacitive feedback offers independent tuning of the amplifier bandpass frequency corners, and attains a noise efficiency factor (NEF) of 2.9 at 8.2 kHz bandwidth for spike recording, and a NEF of 3.2 at 140 Hz bandwidth for EEG recording. The amplifier has a measured midband gain of 39.6 dB, frequency response from 0.2 Hz to 8.2 kHz, and an input-referred noise of 1.94 μVrms while drawing 12.2 μA of current from a 3.3 V supply. The lower and higher cutoff frequencies of the bandpass filter are adjustable from 0.2 to 94 Hz and 140 Hz to 8.2 kHz, respectively. At 10-bit resolution, the ADC has an SNDR of 56 dB while consuming 76 μW power. Time-modulation feedback in the ADC offers programmable digital gain (1–4096) for auto-ranging, further improving the dynamic range and linearity of the ADC. Experimental recordings with the system show spike signals in rat somatosensory cortex as well as alpha EEG activity in a human subject. PMID:20046962

Drop casting of stiffness gradients for chip integration into stretchable substrates

NASA Astrophysics Data System (ADS)

Naserifar, Naser; LeDuc, Philip R.; Fedder, Gary K.

2017-04-01

Stretchable electronics have demonstrated promise within unobtrusive wearable systems in areas such as health monitoring and medical therapy. One significant question is whether it is more advantageous to develop holistic stretchable electronics or to integrate mature CMOS into stretchable electronic substrates where the CMOS process is separated from the mechanical processing steps. A major limitation with integrating CMOS is the dissimilar interface between the soft stretchable and hard CMOS materials. To address this, we developed an approach to pattern an elastomeric polymer layer with spatially varying mechanical properties around CMOS electronics to create a controllable material stiffness gradient. Our experimental approach reveals that modifying the interfaces can increase the strain failure threshold up to 30% and subsequently decreases delamination. The stiffness gradient in the polymer layer provides a safe region for electronic chips to function under a substrate tensile strain up to 150%. These results will have impacts in diverse applications including skin sensors and wearable health monitoring systems.

The Majorana Low-noise Low-background Front-end Electronics

NASA Astrophysics Data System (ADS)

Abgrall, N.; Aguayo, E.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Combs, D. C.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu.; Egorov, V.; Ejiri, H.; Elliott, S. R.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guiseppe, V. E.; Gusev, K.; Hallin, A. L.; Hazama, R.; Hegai, A.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; MacMullin, J.; MacMullin, S.; Martin, R. D.; Meijer, S.; Mertens, S.; Nomachi, M.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Phillips, D. G.; Poon, A. W. P.; Pushkin, K.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Ronquest, M. C.; Schubert, A. G.; Shanks, B.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Suriano, A. M.; Thompson, J.; Timkin, V.; Tornow, W.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Young, A. R.; Yu, C.-H.; Yumatov, V.

The MAJORANA DEMONSTRATOR will search for the neutrinoless double beta decay (ββ(0ν)) of the isotope 76Ge with a mixed array of enriched and natural germanium detectors. In view of the next generation of tonne-scale germanium-based ββ(0ν)-decay searches, a major goal of the MAJORANA DEMONSTRATOR is to demonstrate a path forward to achieving a background rate at or below 1 cnt/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039-keV Q-value of the 76Ge ββ(0ν)-decay. Such a requirement on the background level significantly constrains the design of the readout electronics, which is further driven by noise and energy resolution performances. We present here the low-noise low- background front-end electronics developed for the low-capacitance p-type point contact (P-PC) germanium detectors of the MAJORANA DEMONSTRATOR. This resistive-feedback front-end, specifically designed to have low mass, is fabricated on a radioassayed fused-silica substrate where the feedback resistor consists of a sputtered thin film of high purity amorphous germanium and the feedback capacitor is based on the capacitance between gold conductive traces.

The Majorana low-noise low-background front-end electronics

DOE PAGES

Abgrall, N.; Aguayo, E.; Avignone, III, F. T.; ...

2015-03-24

The Majorana Demonstrator will search for the neutrinoless double beta decay (ββ(0ν)) of the isotope ⁷⁶Ge with a mixed array of enriched and natural germanium detectors. In view of the next generation of tonne-scale germanium-based ββ(0ν)-decay searches, a major goal of the Majorana Demonstrator is to demonstrate a path forward to achieving a background rate at or below 1 cnt/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039-keV Q-value of the ⁷⁶Ge ββ(0ν)-decay. Such a requirement on the background level significantly constrains the design of the readout electronics, which is further driven by noise and energy resolutionmore » performances. We present here the low-noise low-background front-end electronics developed for the low-capacitance p-type point contact (P-PC) germanium detectors of the Majorana Demonstrator. This resistive-feedback front-end, specifically designed to have low mass, is fabricated on a radioassayed fused-silica substrate where the feedback resistor consists of a sputtered thin film of high purity amorphous germanium and the feedback capacitor is based on the capacitance between gold conductive traces.« less

Technology and design of an active-matrix OLED on crystalline silicon direct-view display for a wristwatch computer

NASA Astrophysics Data System (ADS)

Sanford, James L.; Schlig, Eugene S.; Prache, Olivier; Dove, Derek B.; Ali, Tariq A.; Howard, Webster E.

2002-02-01

The IBM Research Division and eMagin Corp. jointly have developed a low-power VGA direct view active matrix OLED display, fabricated on a crystalline silicon CMOS chip. The display is incorporated in IBM prototype wristwatch computers running the Linus operating system. IBM designed the silicon chip and eMagin developed the organic stack and performed the back-end-of line processing and packaging. Each pixel is driven by a constant current source controlled by a CMOS RAM cell, and the display receives its data from the processor memory bus. This paper describes the OLED technology and packaging, and outlines the design of the pixel and display electronics and the processor interface. Experimental results are presented.

A Front-End electronics board for single photo-electron timing and charge from MaPMT

NASA Astrophysics Data System (ADS)

Giordano, F.; Breton, D.; Beigbeder, C.; De Robertis, G.; Fusco, P.; Gargano, F.; Liuzzi, R.; Loparco, F.; Mazziotta, M. N.; Rizzi, V.; Tocut, V.

2013-08-01

A Front-End (FE) design based on commercial operational amplifiers has been developed to read-out signals from a Multianode PhotoMultiplier Tube (MaPMT). The overall design has been optimised for single photo-electron signal from the Hamamatsu H8500. The signal is collected by a current sensitive preamplifier and then it is fed into both a ECL fast discriminator and a shaper for analog output readout in differential mode. The analog signal and the digital gates are then registered on VME ADC and TDC modules respectively. Performances in terms of linearity, gain and timing resolution will be discussed, presenting results obtained on a test bench with differentiated step voltage inputs and also with a prototype electronic board plugged into the H8500 PMT illuminated by a picosecond laser.

Front End Spectroscopy ASIC for Germanium Detectors

NASA Astrophysics Data System (ADS)

Wulf, Eric

Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at the anode and cathode of the device to allow the depth of the interaction within the crystal to be determined. Dr. De Geronimo has developed similar timing circuits for CZT detector ASICs. Furthermore, the timing circuitry of the ASIC is at the very end of the analog section, simplifying and mitigating risks in the redesign. In the first year, we propose to tweak the gain settings and to add timing to the silicon ASIC to match the requirements of a germanium detector. The design specifications of the ASIC will include advice from our collaborators Dr. Boggs from COSI and Dr. Shih from GRIPS. By using a master ASIC designer to integrate his proven front-end and back-end with only minor modifications, we are maximizing the probability of success. NRL has a commercial cross-strip germanium detector with 30 pF of capacitance per strip, including the flex circuit from the detector to the outside of the cryostat. The COSI and GRIPS detectors have a similar capacitance per strip on the outside of their mechanically cooled cryostat. The second year of the program will be devoted to testing the newly fabricated germanium cross-strip ASIC with the NRL germanium detector. At the end of the second year, NASA will have a TRL 5 ASIC for germanium detectors, allowing future missions, including COSI, GRX, and GRIPS, to operate within their thermal and electrical envelopes. At the end of the third year, a detector on COSI will be instrumented with the new ASIC allowing for a TRL 6 demonstration during the following COSI balloon flight.

Development of a compact radiation-hardened low-noise front-end readout ASIC for CZT-based hard X-ray imager

NASA Astrophysics Data System (ADS)

Gao, W.; Gan, B.; Li, X.; Wei, T.; Gao, D.; Hu, Y.

2015-04-01

In this paper, we present the development and performances of a radiation-hardened front-end readout application-specific integrated circuit (ASIC) dedicated to CZT detectors for a hard X-ray imager in space applications. The readout channel consists of a charge sensitive amplifier (CSA), a CR-RC shaper, a fast shaper, a discriminator and a driving buffer. With the additional digital filtering, the readout channel can achieve very low noise performances and low power dissipation. An eight-channel prototype ASIC is designed and fabricated in 0.35 μm CMOS process. The energy range of the detected X-rays is evaluated as 1.45 keV to 281 keV. The gain is larger than 100 mV/fC. The equivalent noise charge (ENC) of the ASIC is 53 e- at zero farad plus 10 e- per picofarad. The power dissipation is less than 4.4 mW/channel. Through the measurement with a CZT detector, the energy resolution is less than 3.45 keV (FWHM) under the irradiation of the radioactive source 241Am. The radiation effect experiments indicate that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad (Si).

A low power, low noise Programmable Analog Front End (PAFE) for biopotential measurements.

PubMed

Adimulam, Mahesh Kumar; Divya, A; Tejaswi, K; Srinivas, M B

2017-07-01

A low power Programmable Analog Front End (PAFE) for biopotential measurements is presented in this paper. The PAFE circuit processes electrocardiogram (ECG), electromyography (EMG) and electroencephalogram (EEG) signals with higher accuracy. It consists mainly of improved transconductance programmable gain instrumentational amplifier (PGIA), programmable high pass filter (PHPF), and second order low pass filter (SLPF). A 15-bit programmable 5-stage successive approximation analog-to-digital converter (SAR-ADC) is implemented for improving the performance, whose power consumption is reduced due to multiple stages and by OTA/Comparator sharing technique between the stages. The power consumption is further reduced by operating the analog portion of PAFE on 0.5V supply voltage and digital portion on 0.3V supply voltage generated internally through a voltage regulator. The proposed low power PAFE has been fabricated in 180nm standard CMOS process. The performance parameters of PAFE in 15-bit mode are found to be, gain of 31-70 dB, input referred noise of 1.15 μVrms, CMRR of 110 dB, PSRR of 104 dB, and signal-to-noise distortion ratio (SNDR) of 83.5dB. The power consumption of the design is 1.1 μW @ 0.5 V supply voltage and it occupies a core silicon area of 1.2 mm 2 .

8-channel prototype of SALT readout ASIC for Upstream Tracker in the upgraded LHCb experiment

NASA Astrophysics Data System (ADS)

Abellan Beteta, C.; Bugiel, S.; Dasgupta, R.; Firlej, M.; Fiutowski, T.; Idzik, M.; Kane, C.; Moron, J.; Swientek, K.; Wang, J.

2017-02-01

SALT is a new 128-channel readout ASIC for silicon strip detectors in the upgraded Upstream Tracker of the LHCb experiment. It will extract and digitise analogue signals from the sensor, perform digital processing and transmit serial output data. SALT is designed in CMOS 130 nm process and uses a novel architecture comprising of an analogue front-end and an ultra-low power (<0.5 mW) fast (40 MSps) sampling 6-bit ADC in each channel. An 8-channel prototype (SALT8), comprising all important functionalities was designed, fabricated and tested. A full 128-channel version was also submitted. The design and test results of the SALT8 prototype are presented showing its full functionality.

First results of the front-end ASIC for the strip detector of the PANDA MVD

NASA Astrophysics Data System (ADS)

Quagli, T.; Brinkmann, K.-T.; Calvo, D.; Di Pietro, V.; Lai, A.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Wheadon, R.; Zambanini, A.

2017-03-01

PANDA is a key experiment of the future FAIR facility and the Micro Vertex Detector (MVD) is the innermost part of its tracking system. PASTA (PAnda STrip ASIC) is the readout chip for the strip part of the MVD. The chip is designed to provide high resolution timestamp and charge information with the Time over Threshold (ToT) technique. Its architecture is based on Time to Digital Converters with analog interpolators, with a time bin width of 50 ps. The chip implements Single Event Upset (SEU) protection techniques for its digital parts. A first full-size prototype with 64 channels was produced in a commercial 110 nm CMOS technology and the first characterizations of the prototype were performed.

Radiation testing campaign results for understanding the suitability of FPGAs in detector electronics

DOE PAGES

Citterio, M.; Camplani, A.; Cannon, M.; ...

2015-11-19

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments ismore » only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.« less

A 10 GS/s time-interleaved ADC in 0.25 micrometer CMOS technology

NASA Astrophysics Data System (ADS)

Aytar, Oktay; Tangel, Ali; Afacan, Engin

2017-11-01

This paper presents design and simulation of a 4-bit 10 GS/s time interleaved ADC in 0.25 micrometer CMOS technology. The designed TI-ADC has 4 channels including 4-bit flash ADC in each channel, in which area and power efficiency are targeted. Therefore, basic standard cell logic gates are preferred. Meanwhile, the aspect ratios in the gate designs are kept as small as possible considering the speed performance. In the literature, design details of the timing control circuits have not been provided, whereas the proposed timing control process is comprehensively explained and design details of the proposed timing control process are clearly presented in this study. The proposed circuits producing consecutive pulses for timing control of the input S/H switches (ie the analog demultiplexer front-end circuitry) and the very fast digital multiplexer unit at the output are the main contributions of this study. The simulation results include +0.26/-0.22 LSB of DNL and +0.01/-0.44 LSB of INL, layout area of 0.27 mm2, and power consumption of 270 mW. The provided power consumption, DNL and INL measures are observed at 100 MHz input with 10 GS/s sampling rate.

Monolithic active pixel sensor development for the upgrade of the ALICE inner tracking system

NASA Astrophysics Data System (ADS)

Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Giubilato, P.; Hillemanns, H.; Junique, A.; Keil, M.; Kim, D.; Kim, J.; Kugathasan, T.; Lattuca, A.; Mager, M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mattiazzo, S.; Mazza, G.; Mugnier, H.; Musa, L.; Pantano, D.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Siddhanta, S.; Snoeys, W.; Usai, G.; van Hoorne, J. W.; Yang, P.; Yi, J.

2013-12-01

ALICE plans an upgrade of its Inner Tracking System for 2018. The development of a monolithic active pixel sensor for this upgrade is described. The TowerJazz 180 nm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel due to the offering of a deep pwell and also to use different starting materials. The ALPIDE development is an alternative to approaches based on a rolling shutter architecture, and aims to reduce power consumption and integration time by an order of magnitude below the ALICE specifications, which would be quite beneficial in terms of material budget and background. The approach is based on an in-pixel binary front-end combined with a hit-driven architecture. Several prototypes have already been designed, submitted for fabrication and some of them tested with X-ray sources and particles in a beam. Analog power consumption has been limited by optimizing the Q/C of the sensor using Explorer chips. Promising but preliminary first results have also been obtained with a prototype ALPIDE. Radiation tolerance up to the ALICE requirements has also been verified.

ALDO: A radiation-tolerant, low-noise, adjustable low drop-out linear regulator in 0.35 μm CMOS technology

NASA Astrophysics Data System (ADS)

Carniti, P.; Cassina, L.; Gotti, C.; Maino, M.; Pessina, G.

2016-07-01

In this work we present ALDO, an adjustable low drop-out linear regulator designed in AMS 0.35 μm CMOS technology. It is specifically tailored for use in the upgraded LHCb RICH detector in order to improve the power supply noise for the front end readout chip (CLARO). ALDO is designed with radiation-tolerant solutions such as an all-MOS band-gap voltage reference and layout techniques aiming to make it able to operate in harsh environments like High Energy Physics accelerators. It is capable of driving up to 200 mA while keeping an adequate power supply filtering capability in a very wide frequency range from 10 Hz up to 100 MHz. This property allows us to suppress the noise and high frequency spikes that could be generated by a DC/DC regulator, for example. ALDO also shows a very low noise of 11.6 μV RMS in the same frequency range. Its output is protected with over-current and short detection circuits for a safe integration in tightly packed environments. Design solutions and measurements of the first prototype are presented.

Performance of the Fully Digital FPGA-Based Front-End Electronics for the GALILEO Array

NASA Astrophysics Data System (ADS)

Barrientos, D.; Bellato, M.; Bazzacco, D.; Bortolato, D.; Cocconi, P.; Gadea, A.; González, V.; Gulmini, M.; Isocrate, R.; Mengoni, D.; Pullia, A.; Recchia, F.; Rosso, D.; Sanchis, E.; Toniolo, N.; Ur, C. A.; Valiente-Dobón, J. J.

2015-12-01

In this work we present the architecture and results of a fully digital Front End Electronics (FEE) read out system developed for the GALILEO array. The FEE system, developed in collaboration with the Advanced Gamma Tracking Array (AGATA) collaboration, is composed of three main blocks: preamplifiers, digitizers and preprocessing electronics. The slow control system contains a custom Linux driver, a dynamic library and a server implementing network services. This work presents the first results of the digital FEE system coupled with a GALILEO germanium detector, which has demonstrated the capability to achieve an energy resolution of 1.530/00 at an energy of 1.33 MeV, similar to the one obtained with a conventional analog system. While keeping a good performance in terms of energy resolution, digital electronics will allow to instrument the full GALILEO array with a versatile system with high integration and low power consumption and costs.

CMOS Image Sensors: Electronic Camera On A Chip

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

Gravitational Reference Sensor Front-End Electronics Simulator for LISA

NASA Astrophysics Data System (ADS)

Meshksar, Neda; Ferraioli, Luigi; Mance, Davor; ten Pierick, Jan; Zweifel, Peter; Giardini, Domenico; ">LISA Pathfinder colaboration,

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, M.

Configuration and calibration of the front-end electronics typical of many silicon detector configurations were investigated in a lab activity based on a pair of strip sensors interfaced with FSSR2 read-out chips and an FPGA. This simple hardware configuration, originally developed for a telescope at the Fermilab Test Beam Facility, was used to measure thresholds and noise on individual readout channels and to study the influence that different configurations of the front-end electronics had on the observed levels of noise in the system. An understanding of the calibration and operation of this small detector system provided an opportunity to explore themore » architecture of larger systems such as those currently in use at LHC experiments.« less

Multiple-target tracking implementation in the ebCMOS camera system: the LUSIPHER prototype

NASA Astrophysics Data System (ADS)

Doan, Quang Tuyen; Barbier, Remi; Dominjon, Agnes; Cajgfinger, Thomas; Guerin, Cyrille

2012-06-01

The domain of the low light imaging systems progresses very fast, thanks to detection and electronic multiplication technology evolution, such as the emCCD (electron multiplying CCD) or the ebCMOS (electron bombarded CMOS). We present an ebCMOS camera system that is able to track every 2 ms more than 2000 targets with a mean number of photons per target lower than two. The point light sources (targets) are spots generated by a microlens array (Shack-Hartmann) used in adaptive optics. The Multiple-Target-Tracking designed and implemented on a rugged workstation is described. The results and the performances of the system on the identification and tracking are presented and discussed.

Analysis and Quantification of Coupling Mechanisms of External Signal Perturbations on Silicon Detectors for Particle Physics Experiments

NASA Astrophysics Data System (ADS)

Arteche, F.; Rivetta, C.; Iglesias, M.; Echeverria, I.

2016-05-01

Silicon detectors have been used in astrophysics satellites and particle detectors for high energy physics (HEP) experiments. For HEP applications, EMC studies have been conducted in silicon detectors to characterize the impact of external noise on the system. They have shown that problems associated with the new generation of silicon detectors are related with interferences generated by the power supplies and auxiliary equipment connected to the device. Characterization of these interferences along with the coupling and their propagation into the susceptible front-end circuits is required for a successful integration of these systems. This paper presents the analysis of the sensitivity curves and coupling mechanisms between the noise and the front-end electronics that have been observed during the characterization of two silicon detector prototypes: the CMS-Silicon tracker detector (CMS-ST) and Silicon Vertex Detector (Belle II-SVD). As a result of these studies, it is possible to identify critical elements in prototypes to take corrective actions in the design and improve the front-end electronics performance.

Integration of solid-state nanopores in a 0.5 μm cmos foundry process

PubMed Central

Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

2013-01-01

High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor’s 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the N+ polysilicon/SiO2/N+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3 which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3. PMID:23519330

Status of the design of the ITER ECE diagnostic

DOE PAGES

Taylor, G.; Austin, M. E.; Beno, J. H.; ...

2015-03-12

In this study, the baseline design for the ITER electron cyclotron emission (ECE) diagnostic has entered the detailed preliminary design phase. Two plasma views are planned, a radial view and an oblique view that is sensitive to distortions in the electron momentum distribution near the average thermal momentum. Both views provide high spatial resolution electron temperature profiles when the momentum distribution remains Maxwellian. The ECE diagnostic system consists of the front-end optics, including two 1000 K calibration sources, in equatorial port plug EP9, the 70-1000 GHz transmission system from the front-end to the diagnostics hall, and the ECE instrumentation inmore » the diagnostics hall. The baseline ECE instrumentation will include two Michelson interferometers that can simultaneously measure ordinary and extraordinary mode ECE from 70 to 1000 GHz, and two heterodyne radiometer systems, covering 122-230 GHz and 244-355 GHz. Significant design challenges include 1) developing highly-reliable 1000 K calibration sources and the associated shutters/mirrors, 2) providing compliant couplings between the front-end optics and the polarization splitter box that accommodate displacements of the vacuum vessel during plasma operations and bake out, 3) protecting components from damage due to stray ECH radiation and other intense millimeter wave emission and 4) providing the low-loss broadband transmission system.« less

End-of-fabrication CMOS process monitor

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hannaman, D. J.; Lieneweg, U.; Lin, Y.-S.; Sayah, H. R.

1990-01-01

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's).

A front end readout electronics ASIC chip for position sensitive solid state detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kravis, S.D.; Tuemer, T.O.; Visser, G.J.

1998-12-31

A mixed signal Application Specific Integrated Circuit (ASIC) chip for front end readout electronics of position sensitive solid state detectors has been manufactured. It is called RENA (Readout Electronics for Nuclear Applications). This chip can be used for both medical and industrial imaging of X-rays and gamma rays. The RENA chip is a monolithic integrated circuit and has 32 channels with low noise high input impedance charge sensitive amplifiers. It works in pulse counting mode with good energy resolution. It also has a self triggering output which is essential for nuclear applications when the incident radiation arrives at random. Different,more » externally selectable, operational modes that includes a sparse readout mode is available to increase data throughput. It also has externally selectable shaping (peaking) times.« less

The electronics and data acquisition system for the DarkSide-50 veto detectors

NASA Astrophysics Data System (ADS)

Agnes, P.; Agostino, L.; Albuquerque, I. F. M.; Alexander, T.; Alton, A. K.; Arisaka, K.; Back, H. O.; Baldin, B.; Biery, K.; Bonfini, G.; Bossa, M.; Bottino, B.; Brigatti, A.; Brodsky, J.; Budano, F.; Bussino, S.; Cadeddu, M.; Cadoni, M.; Calaprice, F.; Canci, N.; Candela, A.; Cao, H.; Cariello, M.; Carlini, M.; Catalanotti, S.; Cavalcante, P.; Chepurnov, A.; Cocco, A. G.; Covone, G.; Crippa, L.; D'Angelo, D.; D'Incecco, M.; Davini, S.; De Cecco, S.; De Deo, M.; De Vincenzi, M.; Derbin, A.; Devoto, A.; Di Eusanio, F.; Di Pietro, G.; Edkins, E.; Empl, A.; Fan, A.; Fiorillo, G.; Fomenko, K.; Foster, G.; Franco, D.; Gabriele, F.; Galbiati, C.; Giganti, C.; Goretti, A. M.; Granato, F.; Grandi, L.; Gromov, M.; Guan, M.; Guardincerri, Y.; Hackett, B. R.; Herner, K. R.; Hungerford, E. V.; Ianni, Aldo; Ianni, Andrea; James, I.; Jollet, C.; Keeter, K.; Kendziora, C. L.; Kobychev, V.; Koh, G.; Korablev, D.; Korga, G.; Kubankin, A.; Li, X.; Lissia, M.; Lombardi, P.; Luitz, S.; Ma, Y.; Machulin, I. N.; Mandarano, A.; Mari, S. M.; Maricic, J.; Marini, L.; Martoff, C. J.; Meregaglia, A.; Meyers, P. D.; Miletic, T.; Milincic, R.; Montanari, D.; Monte, A.; Montuschi, M.; Monzani, M. E.; Mosteiro, P.; Mount, B. J.; Muratova, V. N.; Musico, P.; Napolitano, J.; Nelson, A.; Odrowski, S.; Orsini, M.; Ortica, F.; Pagani, L.; Pallavicini, M.; Pantic, E.; Parmeggiano, S.; Pelczar, K.; Pelliccia, N.; Pocar, A.; Pordes, S.; Pugachev, D. A.; Qian, H.; Randle, K.; Ranucci, G.; Razeto, A.; Reinhold, B.; Renshaw, A. L.; Riffard, Q.; Romani, A.; Rossi, B.; Rossi, N.; Rountree, S. D.; Sablone, D.; Saggese, P.; Saldanha, R.; Sands, W.; Sangiorgio, S.; Savarese, C.; Segreto, E.; Semenov, D. A.; Shields, E.; Singh, P. N.; Skorokhvatov, M. D.; Smirnov, O.; Sotnikov, A.; Stanford, C.; Suvorov, Y.; Tartaglia, R.; Tatarowicz, J.; Testera, G.; Tonazzo, A.; Trinchese, P.; Unzhakov, E. V.; Vishneva, A.; Vogelaar, R. B.; Wada, M.; Walker, S.; Wang, H.; Wang, Y.; Watson, A. W.; Westerdale, S.; Wilhelmi, J.; Wojcik, M. M.; Xiang, X.; Xu, J.; Yang, C.; Yoo, J.; Zavatarelli, S.; Zec, A.; Zhong, W.; Zhu, C.; Zuzel, G.

2016-12-01

DarkSide-50 is a detector for dark matter candidates in the form of weakly interacting massive particles. It utilizes a liquid argon time projection chamber for the inner main detector, surrounded by a liquid scintillator veto (LSV) and a water Cherenkov veto detector (WCV). The LSV and WCV act as the neutron and cosmogenic muon veto detectors for DarkSide-50. This paper describes the electronics and data acquisition system used for these two detectors. The system is made of a custom built front end electronics and commercial National Instruments high speed digitizers. The front end electronics, the DAQ, and the trigger system have been used to acquire data in the form of zero-suppressed waveform samples from the 110 PMTs of the LSV and the 80 PMTs of the WCV. The veto DAQ system has proven its performance and reliability. This electronics and DAQ system can be scaled and used as it is for the veto of the next generation DarkSide-20k detector.

Reviewed approach to defining the Active Interlock Envelope for Front End ray tracing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seletskiy, S.; Shaftan, T.

To protect the NSLS-II Storage Ring (SR) components from damage from synchrotron radiation produced by insertion devices (IDs) the Active Interlock (AI) keeps electron beam within some safe envelope (a.k.a Active Interlock Envelope or AIE) in the transverse phase space. The beamline Front Ends (FEs) are designed under assumption that above certain beam current (typically 2 mA) the ID synchrotron radiation (IDSR) fan is produced by the interlocked e-beam. These assumptions also define how the ray tracing for FE is done. To simplify the FE ray tracing for typical uncanted ID it was decided to provide the Mechanical Engineering groupmore » with a single set of numbers (x,x’,y,y’) for the AIE at the center of the long (or short) ID straight section. Such unified approach to the design of the beamline Front Ends will accelerate the design process and save valuable human resources. In this paper we describe our new approach to defining the AI envelope and provide the resulting numbers required for design of the typical Front End.« less

Design and fabrication of a CMOS-compatible MHP gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ying; Yu, Jun, E-mail: junyu@dlut.edu.cn; Wu, Hao

2014-03-15

A novel micro-hotplate (MHP) gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO{sub 2} film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperaturemore » in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3%) in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.« less

A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem

PubMed Central

Podhraški, Matija; Trontelj, Janez

2016-01-01

An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm. PMID:26999146

A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem.

PubMed

Podhraški, Matija; Trontelj, Janez

2016-03-17

An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm.

Characteristics of Various Photodiode Structures in CMOS Technology with Monolithic Signal Processing Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhopadhyay, Sourav; Chandratre, V. B.; Sukhwani, Menka

2011-10-20

Monolithic optical sensor with readout electronics are needed in optical communication, medical imaging and scintillator based gamma spectroscopy system. This paper presents the design of three different CMOS photodiode test structures and two readout channels in a commercial CMOS technology catering to the need of nuclear instrumentation. The three photodiode structures each of 1 mm{sup 2} with readout electronics are fabricated in 0.35 um, 4 metal, double poly, N-well CMOS process. These photodiode structures are based on available P-N junction of standard CMOS process i.e. N-well/P-substrate, P+/N-well/P-substrate and inter-digitized P+/N-well/P-substrate. The comparisons of typical characteristics among three fabricated photo sensorsmore » are reported in terms of spectral sensitivity, dark current and junction capacitance. Among the three photodiode structures N-well/P-substrate photodiode shows higher spectral sensitivity compared to the other two photodiode structures. The inter-digitized P+/N-well/P-substrate structure has enhanced blue response compared to N-well/P-substrate and P+/N-well/P-substrate photodiode. Design and test results of monolithic readout electronics, for three different CMOS photodiode structures for application related to nuclear instrumentation, are also reported.« less

CMOS Ultra Low Power Radiation Tolerant (CULPRiT) Microelectronics

NASA Technical Reports Server (NTRS)

Yeh, Penshu; Maki, Gary

2007-01-01

Space Electronics needs Radiation Tolerance or hardness to withstand the harsh space environment: high-energy particles can change the state of the electronics or puncture transistors making them disfunctional. This viewgraph document reviews the use of CMOS Ultra Low Power Radiation Tolerant circuits for NASA's electronic requirements.

A 0.5 cm(3) four-channel 1.1 mW wireless biosignal interface with 20 m range.

PubMed

Morrison, Tim; Nagaraju, Manohar; Winslow, Brent; Bernard, Amy; Otis, Brian P

2014-02-01

This paper presents a self-contained, single-chip biosignal monitoring system with wireless programmability and telemetry interface suitable for mainstream healthcare applications. The system consists of low-noise front end amplifiers, ADC, MICS/ISM transmitter and infrared programming capability to configure the state of the chip. An on-chip packetizer ensures easy pairing with standard off-the-shelf receivers. The chip is realized in the IBM 130 nm CMOS process with an area of 2×2 mm(2). The entire system consumes 1.07 mW from a 1.2 V supply. It weighs 0.6 g including a zinc-air battery. The system has been extensively tested in in vivo biological experiments and requires minimal human interaction or calibration.

A low power wearable transceiver for human body communication.

PubMed

Huang, Jin; Chen, Lian-Kang; Zhang, Yuan-Ting

2009-01-01

This paper reports a low power transceiver designed for wearable medical healthcare system. Based on a novel energy-efficient wideband wireless communication scheme that uses human body as a transmission medium, the transceiver can achieve a maximum 15 Mbps data rate with total receiver sensitivity of -30 dBm. The chip measures only 0.56 mm(2) and was fabricated in the SMIC 0.18um 1P6M RF CMOS process. The RX consumes 5mW and TX dissipates 1mW with delivering power up to 10uW, which is suitable for the body area network short range application. Real-time medical information collecting through the human body is fully simulated. Architecture of the chip together with the detail characterizes from its wireless analog front-end are presented.

VLSI 'smart' I/O module development

NASA Astrophysics Data System (ADS)

Kirk, Dan

The developmental history, design, and operation of the MIL-STD-1553A/B discrete and serial module (DSM) for the U.S. Navy AN/AYK-14(V) avionics computer are described and illustrated with diagrams. The ongoing preplanned product improvement for the AN/AYK-14(V) includes five dual-redundant MIL-STD-1553 channels based on DSMs. The DSM is a front-end processor for transferring data to and from a common memory, sharing memory with a host processor to provide improved 'smart' input/output performance. Each DSM comprises three hardware sections: three VLSI-6000 semicustomized CMOS arrays, memory units to support the arrays, and buffers and resynchronization circuits. The DSM hardware module design, VLSI-6000 design tools, controlware and test software, and checkout procedures (using a hardware simulator) are characterized in detail.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Citterio, M.; Camplani, A.; Cannon, M.

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments ismore » only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.« less

The upgrade of the CMS hadron calorimeter with silicon photomultipliers

DOE PAGES

Strobbe, N.

2017-01-26

The upgrade of the hadron calorimeter of the CMS experiment at the CERN Large Hadron Collider is currently underway. The endcap sections will be upgraded in the winter of 2016–2017 and the barrel sections during the second LHC long shutdown in 2019. The existing photosensors will be replaced with about 16 000 new silicon photomultipliers (SiPMs), resulting in the first large installation of SiPMs in a radiation environment. All associated front-end electronics will also be upgraded. Here, this paper discusses the motivation for the upgrade and provides a description 17 of the new system, including the SiPMs with associated controlmore » electronics and the front-end readout cards.« less

A custom readout electronics for the BESIII CGEM detector

NASA Astrophysics Data System (ADS)

Da Rocha Rolo, M.; Alexeev, M.; Amoroso, A.; Baldini Ferroli, R.; Bertani, M.; Bettoni, D.; Bianchi, F.; Bugalho, R.; Calcaterra, A.; Canale, N.; Capodiferro, M.; Carassiti, V.; Cerioni, S.; Chai, J. Y.; Chiozzi, S.; Cibinetto, G.; Cossio, F.; Cotta Ramusino, A.; De Mori, F.; Destefanis, M.; Di Francesco, A.; Dong, J.; Evangelisti, F.; Farinelli, R.; Fava, L.; Felici, G.; Fioravanti, E.; Garzia, I.; Gatta, M.; Greco, M.; Lavezzi, L.; Leng, C. Y.; Li, H.; Maggiora, M.; Malaguti, R.; Marcello, S.; Marciniewski, P.; Melchiorri, M.; Mezzadri, G.; Mignone, M.; Morello, G.; Pacetti, S.; Patteri, P.; Pellegrino, J.; Pelosi, A.; Rivetti, A.; Savrié, M.; Scodeggio, M.; Soldani, E.; Sosio, S.; Spataro, S.; Tskhadadze, E.; Varela, J.; Verma, S.; Wheadon, R.; Yan, L.

2017-07-01

For the upgrade of the inner tracker of the BESIII spectrometer, planned for 2018, a lightweight tracker based on an innovative Cylindrical Gas Electron Multiplier (CGEM) detector is now under development. The analogue readout of the CGEM enables the use of a charge centroid algorithm to improve the spatial resolution to better than 130 μm while loosening the pitch strip to 650 μm, which allows to reduce the total number of channels to about 10 000. The channels are readout by 160 dedicated integrated 64-channel front-end ASICs, providing a time and charge measurement and featuring a fully-digital output. The energy measurement is extracted either from the time-over-threshold (ToT) or the 10-bit digitisation of the peak amplitude of the signal. The time of the event is generated by quad-buffered low-power TDCs, allowing for rates in excess of 60 kHz per channel. The TDCs are based on analogue interpolation techniques and produce a time stamp (or two, if working in ToT mode) of the event with a time resolution better than 50 ps. The front-end noise, based on a CSA and a two-stage complex conjugated pole shapers, dominate the channel intrinsic time jitter, which is less than 5 ns r.m.s. The time information of the hit can be used to reconstruct the track path, operating the detector as a small TPC and hence improving the position resolution when the distribution of the cloud, due to large incident angle or magnetic field, is very broad. Event data is collected by an off-detector motherboard, where each GEM-ROC readout card handles 4 ASIC carrier FEBs (512 channels). Configuration upload and data readout between the off-detector electronics and the VME-based data collector cards are managed by bi-directional fibre optical links. This paper covers the design of a custom front-end electronics for the readout of the new inner tracker of the BESIII experiment, addressing the relevant design aspects of the detector electronics and the front-end ASIC for the CGEM readout, and reviewing the first silicon results of the chip prototype.

A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics

NASA Astrophysics Data System (ADS)

Zhao, Qing-Yuan; McCaughan, Adam N.; Dane, Andrew E.; Berggren, Karl K.; Ortlepp, Thomas

2017-04-01

Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.

Optimizing read-out of the NECTAr front-end electronics

NASA Astrophysics Data System (ADS)

Vorobiov, S.; Feinstein, F.; Bolmont, J.; Corona, P.; Delagnes, E.; Falvard, A.; Gascón, D.; Glicenstein, J.-F.; Naumann, C. L.; Nayman, P.; Ribo, M.; Sanuy, A.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.

2012-12-01

We describe the optimization of the read-out specifications of the NECTAr front-end electronics for the Cherenkov Telescope Array (CTA). The NECTAr project aims at building and testing a demonstrator module of a new front-end electronics design, which takes an advantage of the know-how acquired while building the cameras of the CAT, H.E.S.S.-I and H.E.S.S.-II experiments. The goal of the optimization work is to define the specifications of the digitizing electronics of a CTA camera, in particular integration time window, sampling rate, analog bandwidth using physics simulations. We employed for this work real photomultiplier pulses, sampled at 100 ps with a 600 MHz bandwidth oscilloscope. The individual pulses are drawn randomly at the times at which the photo-electrons, originating from atmospheric showers, arrive at the focal planes of imaging atmospheric Cherenkov telescopes. The timing information is extracted from the existing CTA simulations on the GRID and organized in a local database, together with all the relevant physical parameters (energy, primary particle type, zenith angle, distance from the shower axis, pixel offset from the optical axis, night-sky background level, etc.), and detector configurations (telescope types, camera/mirror configurations, etc.). While investigating the parameter space, an optimal pixel charge integration time window, which minimizes relative error in the measured charge, has been determined. This will allow to gain in sensitivity and to lower the energy threshold of CTA telescopes. We present results of our optimizations and first measurements obtained using the NECTAr demonstrator module.

7 CFR 1717.852 - Financing purposes.

Code of Federal Regulations, 2014 CFR

2014-01-01

... the borrower: water and waste disposal systems, solid waste disposal systems, telecommunication and other electronic communications systems, and natural gas distribution systems; (4) Front-end costs, when...

Experiments with synchronized sCMOS cameras

NASA Astrophysics Data System (ADS)

Steele, Iain A.; Jermak, Helen; Copperwheat, Chris M.; Smith, Robert J.; Poshyachinda, Saran; Soonthorntham, Boonrucksar

2016-07-01

Scientific-CMOS (sCMOS) cameras can combine low noise with high readout speeds and do not suffer the charge multiplication noise that effectively reduces the quantum efficiency of electron multiplying CCDs by a factor 2. As such they have strong potential in fast photometry and polarimetry instrumentation. In this paper we describe the results of laboratory experiments using a pair of commercial off the shelf sCMOS cameras based around a 4 transistor per pixel architecture. In particular using a both stable and a pulsed light sources we evaluate the timing precision that may be obtained when the cameras readouts are synchronized either in software or electronically. We find that software synchronization can introduce an error of 200-msec. With electronic synchronization any error is below the limit ( 50-msec) of our simple measurement technique.

High Rate Digital Demodulator ASIC

NASA Technical Reports Server (NTRS)

Ghuman, Parminder; Sheikh, Salman; Koubek, Steve; Hoy, Scott; Gray, Andrew

1998-01-01

The architecture of High Rate (600 Mega-bits per second) Digital Demodulator (HRDD) ASIC capable of demodulating BPSK and QPSK modulated data is presented in this paper. The advantages of all-digital processing include increased flexibility and reliability with reduced reproduction costs. Conventional serial digital processing would require high processing rates necessitating a hardware implementation in other than CMOS technology such as Gallium Arsenide (GaAs) which has high cost and power requirements. It is more desirable to use CMOS technology with its lower power requirements and higher gate density. However, digital demodulation of high data rates in CMOS requires parallel algorithms to process the sampled data at a rate lower than the data rate. The parallel processing algorithms described here were developed jointly by NASA's Goddard Space Flight Center (GSFC) and the Jet Propulsion Laboratory (JPL). The resulting all-digital receiver has the capability to demodulate BPSK, QPSK, OQPSK, and DQPSK at data rates in excess of 300 Mega-bits per second (Mbps) per channel. This paper will provide an overview of the parallel architecture and features of the HRDR ASIC. In addition, this paper will provide an over-view of the implementation of the hardware architectures used to create flexibility over conventional high rate analog or hybrid receivers. This flexibility includes a wide range of data rates, modulation schemes, and operating environments. In conclusion it will be shown how this high rate digital demodulator can be used with an off-the-shelf A/D and a flexible analog front end, both of which are numerically computer controlled, to produce a very flexible, low cost high rate digital receiver.

The Front-End System For MARE In Milano

NASA Astrophysics Data System (ADS)

Arnaboldi, Claudio; Pessina, Gianluigi

2009-12-01

The first phase of MARE consists of 72 μ-bolometers composed each of a crystal of AgReO4 readout by Si thermistors. The spread in the thermistor characteristics and bolometer thermal coupling leads to different energy conversion gains and optimum operating points of the detectors. Detector biasing levels and voltage gains are completely remote-adjustable by the front end system developed, the subject of this paper, achieving the same signal range at the input of the DAQ system. The front end consists of a cold buffer stage, a second pseudo differential stage followed by a gain stage, an antialiasing filter, and a battery powered detector biasing set up. The DAQ system can be used to set all necessary parameters of the electronics remotely, by writing to a μ-controller located on each board. Fiber optics are used for the serial communication between the DAQ and the front end. To suppress interference noise during normal operation, the clocked devices of the front end are maintained in sleep-mode, except during the set-up phase of the experiment. An automatic DC detector characterization procedure is used to establish the optimum operating point of every detector of the array. A very low noise level has been achieved: about 3nV/□Hz at 1 Hz and 1 nV/□Hz for the white component, high frequencies.

Evaluation of stabilization techniques for ion implant processing

NASA Astrophysics Data System (ADS)

Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Narcy, Mark E.; Livesay, William R.

1999-06-01

With the integration of high current ion implant processing into volume CMOS manufacturing, the need for photoresist stabilization to achieve a stable ion implant process is critical. This study compares electron beam stabilization, a non-thermal process, with more traditional thermal stabilization techniques such as hot plate baking and vacuum oven processing. The electron beam processing is carried out in a flood exposure system with no active heating of the wafer. These stabilization techniques are applied to typical ion implant processes that might be found in a CMOS production process flow. The stabilization processes are applied to a 1.1 micrometers thick PFI-38A i-line photoresist film prior to ion implant processing. Post stabilization CD variation is detailed with respect to wall slope and feature integrity. SEM photographs detail the effects of the stabilization technique on photoresist features. The thermal stability of the photoresist is shown for different levels of stabilization and post stabilization thermal cycling. Thermal flow stability of the photoresist is detailed via SEM photographs. A significant improvement in thermal stability is achieved with the electron beam process, such that photoresist features are stable to temperatures in excess of 200 degrees C. Ion implant processing parameters are evaluated and compared for the different stabilization methods. Ion implant system end-station chamber pressure is detailed as a function of ion implant process and stabilization condition. The ion implant process conditions are detailed for varying factors such as ion current, energy, and total dose. A reduction in the ion implant systems end-station chamber pressure is achieved with the electron beam stabilization process over the other techniques considered. This reduction in end-station chamber pressure is shown to provide a reduction in total process time for a given ion implant dose. Improvements in the ion implant process are detailed across several combinations of current and energy.

The Comfort Measures Order Set at a Tertiary Care Academic Hospital: Is There a Comparable Difference in End-of-Life Care Between Patients Dying in Acute Care When CMOS Is Utilized?

PubMed

Lau, Christine; Stilos, Kalli; Nowell, Allyson; Lau, Fanchea; Moore, Jennifer; Wynnychuk, Lesia

2018-04-01

Standardized protocols have been previously shown to be helpful in managing end-of-life (EOL) care in hospital. The comfort measures order set (CMOS), a standardized framework for assessing imminently dying patients' symptoms and needs, was implemented at a tertiary academic hospital. We assessed whether there were comparable differences in the care of a dying patient when the CMOS was utilized and when it was not. A retrospective chart review was completed on patients admitted under oncology and general internal medicine, who were referred to the inpatient palliative care team for "EOL care" between February 2015 and March 2016. Of 83 patients, 56 (67%) received intiation of the CMOS and 27 (33%) did not for EOL care. There was significant involvement of spiritual care with the CMOS (66%), as compared to the group without CMOS (19%), P < .05. The use of CMOS resulted in 1.7 adjustments to symptom management per patient by palliative care, which was significantly less than the number of symptom management adjustments per patient when CMOS was not used (3.3), P < .05. However, initiating CMOS did not result in a signficant difference in patient distress around the time of death ( P = .11). Dyspnea was the most frequently identified symptom causing distress in actively dying patients. Implementation of the CMOS is helpful in providing a foundation to a comfort approach in imminently dying patients. However, more education on its utility as a framework for EOL care and assessment across the organization is still required.

FELIX: The new detector readout system for the ATLAS experiment

NASA Astrophysics Data System (ADS)

Ryu, Soo; ATLAS TDAQ Collaboration

2017-10-01

After the Phase-I upgrades (2019) of the ATLAS experiment, the Front-End Link eXchange (FELIX) system will be the interface between the data acquisition system and the detector front-end and trigger electronics. FELIX will function as a router between custom serial links and a commodity switch network using standard technologies (Ethernet or Infiniband) to communicate with commercial data collecting and processing components. The system architecture of FELIX will be described and the status of the firmware implementation and hardware development currently in progress will be presented.

Non-Electronic Radio Front-End (NERF)

DTIC Science & Technology

2007-04-01

electro - optic field sensor. The absence of metallic interconnects and the charge isolation provided by the optics removes the soft spots in a traditional receiver. In the proof-of concept experiment, detection of C band electromagnetic signals at 7.38 GHz with a sensitivity of 4.3x10 -3 V/m.Hz(exp 1/2) is demonstrated. The dielectric approach has an added benefit: it reduces physical size of the front end an important benefit in mobile applications. DIELECTRIC RESONATOR ANTENNA, PHOTONICALLY ISOLATED ANTENNA RECEIVER, ELECTRO - OPTIC DIELECTRIC ANTENNA,

A back-illuminated megapixel CMOS image sensor

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

2005-01-01

In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

Integration of solid-state nanopores in a 0.5 μm CMOS foundry process.

PubMed

Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

2013-04-19

High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA-base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide-semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor's 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the n+ polysilicon/SiO2/n+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3, which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3.

CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications.

PubMed

Hussain, Aftab M; Hussain, Muhammad M

2016-06-01

Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agnes, P.; Agostino, L.; Albuquerque, I. F. M.

DarkSide-50 is a detector for dark matter candidates in the form of weakly interacting massive particles. It utilizes a liquid argon time projection chamber for the inner main detector, surrounded by a liquid scintillator veto (LSV) and a water Cherenkov veto detector (WCV). The LSV and WCV act as the neutron and cosmogenic muon veto detectors for DarkSide-50. This paper describes the electronics and data acquisition system used for these two detectors. The system is made of a custom built front end electronics and commercial National Instruments high speed digitizers. The front end electronics, the DAQ, and the trigger systemmore » have been used to acquire data in the form of zero-suppressed waveform samples from the 110 PMTs of the LSV and the 80 PMTs of the WCV. The veto DAQ system has proven its performance and reliability. This electronics and DAQ system can be scaled and used as it is for the veto of the next generation DarkSide-20k detector. Abstract (arXiv)« less

Digital front end electronics design for the EUSO photon detector

NASA Astrophysics Data System (ADS)

Musico, P.; Pallavicini, M.; Petrolini, A.; Pratolongo, F.

2003-09-01

In this paper we will present the design status of the Digital Front End Electronic system (DFEE), that will be used for the EUSO photon detector. The DFEE is able to count the single photoelectrons coming form the detector for a given time period, store the numbers in a memory buffer and read them out after a trigger, using a serial communication line. Because of space, mass and power consumption constraints, the system will be implemented in an ASIC using a deep submicron technology. The actual design follows the original ideas of the system, though adding several new functionalities. A fully functional prototype chip has been submitted for fabrication in fall 2002. Extensive tests will be performed on it both with bench instrumentations and with the real sensor (the multi anode photomultiplier Hamamatsu R7600-M64), expecting significant results by early Summer 2003. Future work is needed to convert the design into a more robust RAD-hard technology, suitable for space applications and to include in the final die an additional circuit used to optimize the performances at high photons rates: the Analog Front End Electronics (AFEE). Moreover the base board used to house the multi anode photomultipliers is presented: it is the back-bone of the microcell and will be the basic block used to build up the EUSO focal surface.

Proton irradiation of the CIS115 for the JUICE mission

NASA Astrophysics Data System (ADS)

Soman, M. R.; Allanwood, E. A. H.; Holland, A. D.; Winstone, G. P.; Gow, J. P. D.; Stefanov, K.; Leese, M.

2015-09-01

The CIS115 is one of the latest CMOS Imaging Sensors designed by e2v technologies, with 1504x2000 pixels on a 7 μm pitch. Each pixel in the array is a pinned photodiode with a 4T architecture, achieving an average dark current of 22 electrons pixel-1 s-1 at 21°C measured in a front-faced device. The sensor aims for high optical sensitivity by utilising e2v's back-thinning and processing capabilities, providing a sensitive silicon thickness approximately 9 μm to 12 μm thick with a tuned anti-reflective coating. The sensor operates in a rolling shutter mode incorporating reset level subtraction resulting in a mean pixel readout noise of 4.25 electrons rms. The full well has been measured to be 34000 electrons in a previous study, resulting in a dynamic range of up to 8000. These performance characteristics have led to the CIS115 being chosen for JANUS, the high-resolution and wide-angle optical camera on the JUpiter ICy moon Explorer (JUICE). The three year science phase of JUICE is in the harsh radiation environment of the Jovian magnetosphere, primarily studying Jupiter and its icy moons. Analysis of the expected radiation environment and shielding levels from the spacecraft and instrument design predict the End Of Life (EOL) displacement and ionising damage for the CIS115 to be equivalent to 1010 10 MeV protons cm-2 and 100 krad(Si) respectively. Dark current and image lag characterisation results following initial proton irradiations are presented, detailing the initial phase of space qualification of the CIS115. Results are compared to the pre-irradiation performance and the instrument specifications and further qualification plans are outlined.

IMOTEPAD: A mixed-signal 64-channel front-end ASIC for small-animal PET imaging

NASA Astrophysics Data System (ADS)

Fang, Xiaochao; Ollivier-Henry, Nicolas; Gao, Wu; Hu-Guo, Christine; Colledani, Claude; Humbert, Bernard; Brasse, David; Hu, Yann

2011-04-01

This paper presents the design and characteristics of a mixed-signal 64-channel front-end readout ASIC called IMOTEPAD dedicated to multi-channel plate (MCP) photodetector coupled to LYSO scintillating crystals for small-animal PET imaging. In our configuration, the crystals are oriented in the axial direction readout on both sides by individual photodetector channels allowing the spatial resolution and the detection efficiency to be independent of each other. As a result, both energy signals and timing triggers from the photodetectors are required to be read out by the front-end ASIC. This dedicated ASIC IMOTEPAD comprises two parts: the analog part IMOTEPA and the digital part IMOTEPD. The IMOTEPA is dedicated to energy measurement. And the timing information is digitized by the IMOTEPD in which the key principal element is a time-to-digital converter (TDC) based on a delay-locked loop (DLL) with 32 delay cells. The chip is designed and fabricated in 0.35 μm CMOS process. The measurements show that for the analog part IMOTEPA, the energy gain is 13.1 mV/pC while the peak time of a CR-RC pulse shaper is 280 ns. The SNR is 39 dB and the RMS noise is 300 μV. The nonlinearity is less than 3%. The crosstalk is less than 0.2%. For the IMOTEPD, the bin size of the TDC is 625 ps with a reference clock of 50 MHz. The RMS jitter of the DLL is less than 42 ps. The DNL of the TDC is equal to about 0.17 LSB and the INL is equal to 0.31 LSB. The power dissipation of each channel is less than 16.8 mW. The design of the ASIC, especially for TDC and the measurement results of the IMOTEPAD will be presented and discussed in this paper.

An Autonomous Wireless Sensor Node With Asynchronous ECG Monitoring in 0.18 μ m CMOS.

PubMed

Mansano, Andre L; Li, Yongjia; Bagga, Sumit; Serdijn, Wouter A

2016-06-01

The design of a 13.56 MHz/402 MHz autonomous wireless sensor node with asynchronous ECG monitoring for near field communication is presented. The sensor node consists of an RF energy harvester (RFEH), a power management unit, an ECG readout, a data encoder and an RF backscattering transmitter. The energy harvester supplies the system with 1.25 V and offers a power conversion efficiency of 19% from a -13 dBm RF source at 13.56 MHz. The power management unit regulates the output voltage of the RFEH to supply the ECG readout with VECG = 0.95 V and the data encoder with VDE = 0.65 V . The ECG readout comprises an analog front-end (low noise amplifier and programmable voltage to current converter) and an asynchronous level crossing ADC with 8 bits resolution. The ADC output is encoded by a pulse generator that drives a backscattering transmitter at 402 MHz. The total power consumption of the sensor node circuitry is 9.7 μ W for a data rate of 90 kb/s and a heart rate of 70 bpm. The chip has been designed in a 0.18 μm CMOS process and shows superior RF input power sensitivity and lower power consumption when compared to previous works.

A front-end read out chip for the OPERA scintillator tracker

NASA Astrophysics Data System (ADS)

Lucotte, A.; Bondil, S.; Borer, K.; Campagne, J. E.; Cazes, A.; Hess, M.; de La Taille, C.; Martin-Chassard, G.; Raux, L.; Repellin, J. P.

2004-04-01

Multi-anode photomultipliers H7546 are used to readout signal from the OPERA Scintillator Tracker (CERN/SPSC 2000-028, SPSC/P318, LNGSP 25/2000; CERN/SPSC 2001-025, SPSC/M668, LNGS-EXP30/2001). A 32-channel front-end Read Out Chip prototype accommodating the H7546 has been designed at LAL. This device features a low-noise, variable gain preamplifier to correct for multi-anode non-uniformity, an auto-trigger capability 100% efficient at a 0.3 photo-electron, and a charge measurement extending over a large dynamic range [0-100] photo-electrons. In this article we describe the ASIC architecture that is being implemented for the Target Tracker in OPERA, with a special emphasis put on the designs and the measured performance.

Monolithic integration of a plasmonic sensor with CMOS technology

NASA Astrophysics Data System (ADS)

Shakoor, Abdul; Cheah, Boon C.; Hao, Danni; Al-Rawhani, Mohammed; Nagy, Bence; Grant, James; Dale, Carl; Keegan, Neil; McNeil, Calum; Cumming, David R. S.

2017-02-01

Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. Doing so eliminates the need of expensive and bulky laboratory based optical spectrum analyzers used currently for measurements of nanophotonic sensor chips. The experimental optical sensitivity of the gold nanodiscs is measured to be 275 nm/RIU which translates to an electrical sensitivity of 5.4 V/RIU. This integration of nanophotonic sensors with the CMOS electronics has the potential to revolutionize personalized medical diagnostics similar to the way in which the CMOS technology has revolutionized the electronics industry.

Autonomous pedestrian localization technique using CMOS camera sensors

NASA Astrophysics Data System (ADS)

Chun, Chanwoo

2014-09-01

We present a pedestrian localization technique that does not need infrastructure. The proposed angle-only measurement method needs specially manufactured shoes. Each shoe has two CMOS cameras and two markers such as LEDs attached on the inward side. The line of sight (LOS) angles towards the two markers on the forward shoe are measured using the two cameras on the other rear shoe. Our simulation results shows that a pedestrian walking down in a shopping mall wearing this device can be accurately guided to the front of a destination store located 100m away, if the floor plan of the mall is available.

Radiation hard programmable delay line for LHCb calorimeter upgrade

NASA Astrophysics Data System (ADS)

Mauricio, J.; Gascón, D.; Vilasís, X.; Picatoste, E.; Machefert, F.; Lefrancois, J.; Duarte, O.; Beigbeder, C.

2014-01-01

This paper describes the implementation of a SPI-programmable clock delay chip based on a Delay Locked Loop (DLL) in order to shift the phase of the LHC clock (25 ns) in steps of 1ns, with less than 5 ps jitter and 23 ps of DNL. The delay lines will be integrated into ICECAL, the LHCb calorimeter front-end analog signal processing ASIC in the near future. The stringent noise requirements on the ASIC imply minimizing the noise contribution of digital components. This is accomplished by implementing the DLL in differential mode. To achieve the required radiation tolerance several techniques are applied: double guard rings between PMOS and NMOS transistors as well as glitch suppressors and TMR Registers. This 5.7 mm2 chip has been implemented in CMOS 0.35 μm technology.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

PubMed

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Algorithm for fast event parameters estimation on GEM acquired data

NASA Astrophysics Data System (ADS)

Linczuk, Paweł; Krawczyk, Rafał D.; Poźniak, Krzysztof T.; Kasprowicz, Grzegorz; Wojeński, Andrzej; Chernyshova, Maryna; Czarski, Tomasz

2016-09-01

We present study of a software-hardware environment for developing fast computation with high throughput and low latency methods, which can be used as back-end in High Energy Physics (HEP) and other High Performance Computing (HPC) systems, based on high amount of input from electronic sensor based front-end. There is a parallelization possibilities discussion and testing on Intel HPC solutions with consideration of applications with Gas Electron Multiplier (GEM) measurement systems presented in this paper.

Reconfigurable radio receiver with fractional sample rate converter and multi-rate ADC based on LO-derived sampling clock

NASA Astrophysics Data System (ADS)

Park, Sungkyung; Park, Chester Sungchung

2018-03-01

A composite radio receiver back-end and digital front-end, made up of a delta-sigma analogue-to-digital converter (ADC) with a high-speed low-noise sampling clock generator, and a fractional sample rate converter (FSRC), is proposed and designed for a multi-mode reconfigurable radio. The proposed radio receiver architecture contributes to saving the chip area and thus lowering the design cost. To enable inter-radio access technology handover and ultimately software-defined radio reception, a reconfigurable radio receiver consisting of a multi-rate ADC with its sampling clock derived from a local oscillator, followed by a rate-adjustable FSRC for decimation, is designed. Clock phase noise and timing jitter are examined to support the effectiveness of the proposed radio receiver. A FSRC is modelled and simulated with a cubic polynomial interpolator based on Lagrange method, and its spectral-domain view is examined in order to verify its effect on aliasing, nonlinearity and signal-to-noise ratio, giving insight into the design of the decimation chain. The sampling clock path and the radio receiver back-end data path are designed in a 90-nm CMOS process technology with 1.2V supply.

Electronic drive and acquisition system for mass spectrometry

NASA Technical Reports Server (NTRS)

Schaefer, Rembrandt Thomas (Inventor); Chutjian, Ara (Inventor); Tran, Tuan (Inventor); Madzunkov, Stojan M. (Inventor); Thomas, John L. (Inventor); Mojarradi, Mohammad (Inventor); MacAskill, John (Inventor); Blaes, Brent R. (Inventor); Darrach, Murray R. (Inventor); Burke, Gary R. (Inventor)

2010-01-01

The present invention discloses a mixed signal RF drive electronics board that offers small, low power, reliable, and customizable method for driving and generating mass spectra from a mass spectrometer, and for control of other functions such as electron ionizer, ion focusing, single-ion detection, multi-channel data accumulation and, if desired, front-end interfaces such as pumps, valves, heaters, and columns.

Electronics and triggering challenges for the CMS High Granularity Calorimeter

NASA Astrophysics Data System (ADS)

Lobanov, A.

2018-02-01

The High Granularity Calorimeter (HGCAL), presently being designed by the CMS collaboration to replace the CMS endcap calorimeters for the High Luminosity phase of LHC, will feature six million channels distributed over 52 longitudinal layers. The requirements for the front-end electronics are extremely challenging, including high dynamic range (0.2 fC-10 pC), low noise (~2000 e- to be able to calibrate on single minimum ionising particles throughout the detector lifetime) and low power consumption (~20 mW/channel), as well as the need to select and transmit trigger information with a high granularity. Exploiting the intrinsic precision-timing capabilities of silicon sensors also requires careful design of the front-end electronics as well as the whole system, particularly clock distribution. The harsh radiation environment and requirement to keep the whole detector as dense as possible will require novel solutions to the on-detector electronics layout. Processing the data from the HGCAL imposes equally large challenges on the off-detector electronics, both for the hardware and incorporated algorithms. We present an overview of the complete electronics architecture, as well as the performance of prototype components and algorithms.

Systematic analysis of CMOS-micromachined inductors with application to mixer matching circuits

NASA Astrophysics Data System (ADS)

Wu, Jerry Chun-Li

The growing demand for consumer voice and data communication systems and military communication applications has created a need for low-power, low-cost, high-performance radio-frequency (RF) front-end. To achieve this goal, bringing passive components, especially inductors, to silicon is imperative. On-chip passive components such as inductors and capacitors generally enhance the reliability and efficiency of silicon-integrated RF cells. They can provide circuit solutions with superior performance and contribute to a higher level of integration. With passive components on chip, there is a great opportunity to have transformers, filters, and matching networks on chip. However, inductors on silicon have a low quality factor (Q) due to both substrate and metal loss. This dissertation demonstrates the systematic analysis of inductors fabricated using standard complementary metal-oxide-semiconductor (CMOS) and micro-electro-mechanical (MEMS) system technologies. We report system-on-chip inductor modeling, simulation, and measurements of effective inductance and quality factors. In this analysis methodology, a number of systematic simulations are performed on regular and micromachined inductors with different parameters such as spiral topology, number of turns, outer diameter, thickness, and percentage of substrate removed by using micromachining technologies. Three different novel support structures of the micromachined spiral inductor are proposed, analyzed, and implemented for larger size suspended inductors. The sensitivity of the structure support and different degree of substrate etching by post-processing is illustrated. The results provide guidelines for the selection of inductor parameters, post-processing methodologies, and its spiral supports to meet the RF design specifications and the stability requirements for mobile communication. The proposed CMOS-micromachined inductor is used in a low cost-effective double-balanced Gilbert mixer with on-chip matching network. The integrated mixer inductor was implemented and tested to prove the concept.

Actuation stability test of the LISA pathfinder inertial sensor front-end electronics

NASA Astrophysics Data System (ADS)

Mance, Davor; Gan, Li; Weber, Bill; Weber, Franz; Zweifel, Peter

In order to limit the residual stray forces on the inertial sensor test mass in LISA pathfinder, √ it is required that the fluctuation of the test mass actuation voltage is within 2ppm/ Hz. The actuation voltage stability test on the flight hardware of the inertial sensor front-end electronics (IS FEE) is presented in this paper. This test is completed during the inertial sensor integration at EADS Astrium Friedrichshafen, Germany. The standard measurement method using voltmeter is not sufficient for verification, since the instrument low frequency √ fluctuation is higher than the 2ppm/ Hz requirement. In this test, by using the differential measurement method and the lock-in amplifier, the actuation stability performance is verified and the quality of the IS FEE hardware is confirmed by the test results.

A scalable neural chip with synaptic electronics using CMOS integrated memristors.

PubMed

Cruz-Albrecht, Jose M; Derosier, Timothy; Srinivasa, Narayan

2013-09-27

The design and simulation of a scalable neural chip with synaptic electronics using nanoscale memristors fully integrated with complementary metal-oxide-semiconductor (CMOS) is presented. The circuit consists of integrate-and-fire neurons and synapses with spike-timing dependent plasticity (STDP). The synaptic conductance values can be stored in memristors with eight levels, and the topology of connections between neurons is reconfigurable. The circuit has been designed using a 90 nm CMOS process with via connections to on-chip post-processed memristor arrays. The design has about 16 million CMOS transistors and 73 728 integrated memristors. We provide circuit level simulations of the entire chip performing neuronal and synaptic computations that result in biologically realistic functional behavior.

Simple BiCMOS CCCTA design and resistorless analog function realization.

PubMed

Tangsrirat, Worapong

2014-01-01

The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA) in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (R x) and current transfer (i o/i z), are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

Development and evaluation of a comprehensive clinical decision support taxonomy: comparison of front-end tools in commercial and internally developed electronic health record systems

PubMed Central

Sittig, Dean F; Ash, Joan S; Feblowitz, Joshua; Meltzer, Seth; McMullen, Carmit; Guappone, Ken; Carpenter, Jim; Richardson, Joshua; Simonaitis, Linas; Evans, R Scott; Nichol, W Paul; Middleton, Blackford

2011-01-01

Background Clinical decision support (CDS) is a valuable tool for improving healthcare quality and lowering costs. However, there is no comprehensive taxonomy of types of CDS and there has been limited research on the availability of various CDS tools across current electronic health record (EHR) systems. Objective To develop and validate a taxonomy of front-end CDS tools and to assess support for these tools in major commercial and internally developed EHRs. Study design and methods We used a modified Delphi approach with a panel of 11 decision support experts to develop a taxonomy of 53 front-end CDS tools. Based on this taxonomy, a survey on CDS tools was sent to a purposive sample of commercial EHR vendors (n=9) and leading healthcare institutions with internally developed state-of-the-art EHRs (n=4). Results Responses were received from all healthcare institutions and 7 of 9 EHR vendors (response rate: 85%). All 53 types of CDS tools identified in the taxonomy were found in at least one surveyed EHR system, but only 8 functions were present in all EHRs. Medication dosing support and order facilitators were the most commonly available classes of decision support, while expert systems (eg, diagnostic decision support, ventilator management suggestions) were the least common. Conclusion We developed and validated a comprehensive taxonomy of front-end CDS tools. A subsequent survey of commercial EHR vendors and leading healthcare institutions revealed a small core set of common CDS tools, but identified significant variability in the remainder of clinical decision support content. PMID:21415065

MATLAB/Simulink Pulse-Echo Ultrasound System Simulator Based on Experimentally Validated Models.

PubMed

Kim, Taehoon; Shin, Sangmin; Lee, Hyongmin; Lee, Hyunsook; Kim, Heewon; Shin, Eunhee; Kim, Suhwan

2016-02-01

A flexible clinical ultrasound system must operate with different transducers, which have characteristic impulse responses and widely varying impedances. The impulse response determines the shape of the high-voltage pulse that is transmitted and the specifications of the front-end electronics that receive the echo; the impedance determines the specification of the matching network through which the transducer is connected. System-level optimization of these subsystems requires accurate modeling of pulse-echo (two-way) response, which in turn demands a unified simulation of the ultrasonics and electronics. In this paper, this is realized by combining MATLAB/Simulink models of the high-voltage transmitter, the transmission interface, the acoustic subsystem which includes wave propagation and reflection, the receiving interface, and the front-end receiver. To demonstrate the effectiveness of our simulator, the models are experimentally validated by comparing the simulation results with the measured data from a commercial ultrasound system. This simulator could be used to quickly provide system-level feedback for an optimized tuning of electronic design parameters.

The New APD Based Readout for the Crystal Barrel Calorimeter

NASA Astrophysics Data System (ADS)

Urban, M.; Honisch, Ch; Steinacher, M.; CBELSA/TAPS Collaboration

2015-02-01

The CBELSA/TAPS experiment at ELSA measures double polarization observables in meson photoproduction off protons and neutrons. To be able to measure purely neutral reactions off polarized neutrons with high efficiency, the main calorimeter has to be integrated into the first level trigger. This requires to exchange the existing PIN photo diode by a new avalanche photo diode (APD) readout. The newly developed readout electronics will provide an energy resolution compatible to the previous set-up and a fast trigger signal down to 10 MeV energy deposit per crystal. After the successful final tests with a 3x3 CsI crystal matrix in Bonn at ELSA and in Mainz at MAMI all front-end electronics were produced in fall 2013. Automated test routines for the front-end electronics were developed and the characterization measurements of all APDs were successfully accomplished in Bonn. The project is supported by the Deutsche Forschungsgemeinschaft (SFB/TR16) and Schweizerischer Nationalfonds.

NECTAR: New electronics for the Cherenkov Telescope Array

NASA Astrophysics Data System (ADS)

Naumann, Christopher Lindsay; Bolmont, J.; Corona, P.; Delagnes, E.; Dzahini, D.; Feinstein, F.; Gascon, D.; Glicenstein, J.-F.; Nayman, P.; Rarbi, F.; Ribo, M.; Sanuy, A.; Siero, X.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.; Vorobiov, S.

2012-12-01

The international CTA consortium is currently in the preparatory phase for the development of the next-generation Cherenkov Telescope Array (CTA [1]), based on the return of experience from the three major current-generation arrays H.E.S.S., MAGIC and VERITAS. To achieve an unprecedented sensitivity and energy range for TeV gamma rays, a new kind of flexible and powerful yet inexpensive front-end hardware will be required for the order of 105 channels of photodetectors in up to 100 telescopes. One possible solution is the NECTAr (New Electronics for the Cherenkov Telescope Array) system, based on the integration of as much as possible of the front-end electronics (amplifiers, fast analogue samplers, memory and ADCs) into a single ASIC for very fast readout performance and a significant reduction of the cost and the lower consumption per channel, while offering a high degree of flexibility both for the triggering and the readout of the telescope. The current status of its development is presented, along with newest results from measurements and simulation studies.

Development of a 32-channel ASIC for an X-ray APD detector onboard the ISS

NASA Astrophysics Data System (ADS)

Arimoto, Makoto; Harita, Shohei; Sugita, Satoshi; Yatsu, Yoichi; Kawai, Nobuyuki; Ikeda, Hirokazu; Tomida, Hiroshi; Isobe, Naoki; Ueno, Shiro; Mihara, Tatehiro; Serino, Motoko; Kohmura, Takayoshi; Sakamoto, Takanori; Yoshida, Atsumasa; Tsunemi, Hiroshi; Hatori, Satoshi; Kume, Kyo; Hasegawa, Takashi

2018-02-01

We report on the design and performance of a mixed-signal application specific integrated circuit (ASIC) dedicated to avalanche photodiodes (APDs) in order to detect hard X-ray emissions in a wide energy band onboard the International Space Station. To realize wide-band detection from 20 keV to 1 MeV, we use Ce:GAGG scintillators, each coupled to an APD, with low-noise front-end electronics capable of achieving a minimum energy detection threshold of 20 keV. The developed ASIC has the ability to read out 32-channel APD signals using 0.35 μm CMOS technology, and an analog amplifier at the input stage is designed to suppress the capacitive noise primarily arising from the large detector capacitance of the APDs. The ASIC achieves a performance of 2099 e- + 1.5 e-/pF at root mean square (RMS) with a wide 300 fC dynamic range. Coupling a reverse-type APD with a Ce:GAGG scintillator, we obtain an energy resolution of 6.7% (FWHM) at 662 keV and a minimum detectable energy of 20 keV at room temperature (20 °C). Furthermore, we examine the radiation tolerance for space applications by using a 90 MeV proton beam, confirming that the ASIC is free of single-event effects and can operate properly without serious degradation in analog and digital processing.

X-ray performance of 0.18 µm CMOS APS test arrays for solar observation

NASA Astrophysics Data System (ADS)

Dryer, B. J.; Holland, A. D.; Jerram, P.; Sakao, Taro

2012-07-01

Solar-C is the third generation solar observatory led by JAXA. The accepted ‘Plan-B’ payload calls for a radiation-hard solar-staring photon-counting x-ray spectrometer. CMOS APS technology offers advantages over CCDs for such an application such as increased radiation hardness and high frame rate (instrument target of 1000 fps). Looking towards the solution of a bespoke CMOS APS, this paper reports the x-ray spectroscopy performance, concentrating on charge collection efficiency and split event analysis, of two baseline e2v CMOS APSs not designed for x-ray performance, the EV76C454 and the Ocean Colour Imager (OCI) test array. The EV76C454 is an industrial 5T APS designed for machine vision, available back and front illuminated. The OCI test arrays have varying pixel design across the chips, but are 4T, back illuminated and have thin low-resistivity and thick high-resistivity variants. The OCI test arrays’ pixel variants allow understanding of how pixel design can affect x-ray performance.

Developing Electronic Performance Support Systems for Professionals.

ERIC Educational Resources Information Center

Law, Michael P.; And Others

This paper discusses a variety of development strategies and issues involved in the development of electronic performance support systems (EPSS) for professionals. The topics of front-end analysis, development, and evaluation are explored in the context of a case study involving the development of an EPSS to support teachers in the use of…

AN INTERNET RACK MONITOR-CONTROLLER FOR APS LINAC RF ELECTRONICS UPGRADE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Hengjie; Smith, Terry; Nassiri, Alireza

To support the research and development in APS LINAC area, the existing LINAC rf control performance needs to be much improved, and thus an upgrade of the legacy LINAC rf electronics becomes necessary. The proposed upgrade plan centers on the concept of using a modern, network-attached, rackmount digital electronics platform –Internet Rack Monitor-Controller (or IRMC) to achieve the goal of modernizing the rf electronics at a lower cost. The system model of the envisioned IRMC is basically a 3-tier stack with a high-performance DSP in the mid-layer to perform the core tasks of real-time rf data processing and controls. Themore » Digital Front-End (DFE) attachment layer at bottom bridges the applicationspecific rf front-ends to the DSP. A network communication gateway, together with an embedded event receiver (EVR) in the top layer merges the Internet Rack MonitorController node into the networks of the accelerator controls infrastructure. Although the concept is very much in trend with today’s Internet-of-Things (IoT), this implementation has actually been used in the accelerators for over two decades.« less

The Phase-2 electronics upgrade of the ATLAS liquid argon calorimeter system

NASA Astrophysics Data System (ADS)

Vachon, B.

2018-03-01

The LHC high-luminosity upgrade in 2024-2026 requires the associated detectors to operate at luminosities about 5-7 times larger than assumed in their original design. The pile-up is expected to increase to up to 200 events per proton bunch-crossing. The current readout of the ATLAS liquid argon calorimeters does not provide sufficient buffering and bandwidth capabilities to accommodate the hardware triggers requirements imposed by these harsh conditions. Furthermore, the expected total radiation doses are beyond the qualification range of the current front-end electronics. For these reasons an almost complete replacement of the front-end and off-detector readout system is foreseen for the 182,468 readout channels. The new readout system will be based on a free-running architecture, where calorimeter signals are amplified, shaped and digitized by on-detector electronics, then sent at 40 MHz to the off-detector electronics for further processing. Results from the design studies on the performance of the components of the readout system are presented, as well as the results of the tests of the first prototypes.

An Inductively-Powered Wireless Neural Recording System with a Charge Sampling Analog Front-End

PubMed Central

Lee, Seung Bae; Lee, Byunghun; Kiani, Mehdi; Mahmoudi, Babak; Gross, Robert; Ghovanloo, Maysam

2015-01-01

An inductively-powered wireless integrated neural recording system (WINeR-7) is presented for wireless and battery less neural recording from freely-behaving animal subjects inside a wirelessly-powered standard homecage. The WINeR-7 system employs a novel wide-swing dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which performs amplification, filtering, sampling, and analog-to-time conversion (ATC) with minimal interference and small amount of power. The output of the DSCS-AFE produces a pseudo-digital pulse width modulated (PWM) signal. A circular shift register (CSR) time division multiplexes (TDM) the PWM pulses to create a TDM-PWM signal, which is fed into an on-chip 915 MHz transmitter (Tx). The AFE and Tx are supplied at 1.8 V and 4.2 V, respectively, by a power management block, which includes a high efficiency active rectifier and automatic resonance tuning (ART), operating at 13.56 MHz. The 8-ch system-on-a-chip (SoC) was fabricated in a 0.35-μm CMOS process, occupying 5.0 × 2.5 mm2 and consumed 51.4 mW. For each channel, the sampling rate is 21.48 kHz and the power consumption is 19.3 μW. In vivo experiments were conducted on freely behaving rats in an energized homecage by continuously delivering 51.4 mW to the WINeR-7 system in a closed-loop fashion and recording local field potentials (LFP). PMID:27069422

An Inductively-Powered Wireless Neural Recording System with a Charge Sampling Analog Front-End.

PubMed

Lee, Seung Bae; Lee, Byunghun; Kiani, Mehdi; Mahmoudi, Babak; Gross, Robert; Ghovanloo, Maysam

2016-01-15

An inductively-powered wireless integrated neural recording system (WINeR-7) is presented for wireless and battery less neural recording from freely-behaving animal subjects inside a wirelessly-powered standard homecage. The WINeR-7 system employs a novel wide-swing dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which performs amplification, filtering, sampling, and analog-to-time conversion (ATC) with minimal interference and small amount of power. The output of the DSCS-AFE produces a pseudo-digital pulse width modulated (PWM) signal. A circular shift register (CSR) time division multiplexes (TDM) the PWM pulses to create a TDM-PWM signal, which is fed into an on-chip 915 MHz transmitter (Tx). The AFE and Tx are supplied at 1.8 V and 4.2 V, respectively, by a power management block, which includes a high efficiency active rectifier and automatic resonance tuning (ART), operating at 13.56 MHz. The 8-ch system-on-a-chip (SoC) was fabricated in a 0.35-μm CMOS process, occupying 5.0 × 2.5 mm 2 and consumed 51.4 mW. For each channel, the sampling rate is 21.48 kHz and the power consumption is 19.3 μW. In vivo experiments were conducted on freely behaving rats in an energized homecage by continuously delivering 51.4 mW to the WINeR-7 system in a closed-loop fashion and recording local field potentials (LFP).

Onboard calibration circuit for the DAMPE BGO calorimeter front-end electronics

NASA Astrophysics Data System (ADS)

Zhang, De-Liang; Feng, Chang-Qing; Zhang, Jun-Bin; Wang, Qi; Ma, Si-Yuan; Shen, Zhong-Tao; Jiang, Di; Gao, Shan-Shan; Zhang, Yun-Long; Guo, Jian-Hua; Liu, Shu-Bin; An, Qi

2016-05-01

DAMPE (DArk Matter Particle Explorer) is a scientific satellite which is mainly aimed at indirectly searching for dark matter in space. One critical sub-detector of the DAMPE payload is the BGO (bismuth germanium oxide) calorimeter, which contains 1848 PMT (photomultiplier tube) dynodes and 16 FEE (Front-End Electronics) boards. VA160 and VATA160, two 32-channel low power ASICs (Application Specific Integrated Circuits), are adopted as the key components on the FEEs to perform charge measurement for the PMT signals. In order to monitor the parameter drift which may be caused by temperature variation, aging, or other environmental factors, an onboard calibration circuit is designed for the VA160 and VATA160 ASICs. It is mainly composed of a 12-bit DAC (Digital to Analog Converter), an operational amplifier and an analog switch. Test results showed that a dynamic range of 0-30 pC with a precision of 5 fC (Root Meam Square, RMS) was achieved, which covers the VA160’s input range. It can be used to compensate for the temperature drift and test the trigger function of the FEEs. The calibration circuit has been implemented for the front-end electronics of the BGO Calorimeter and verified by all the environmental tests for both Qualification Model and Flight Model of DAMPE. The DAMPE satellite was launched at the end of 2015 and the calibration circuit will operate periodically in space. Supported by Strategic Priority Research Program on Space Science of Chinese Academy of Sciences (XDA04040202-4), and National Basic Research Program (973 Program) of China (2010CB833002) and National Natural Science Foundation of China (11273070)

Development of a 3D CZT detector prototype for Laue Lens telescope

NASA Astrophysics Data System (ADS)

Caroli, Ezio; Auricchio, Natalia; Del Sordo, Stefano; Abbene, Leonardo; Budtz-Jørgensen, Carl; Casini, Fabio; Curado da Silva, Rui M.; Kuvvetlli, Irfan; Milano, Luciano; Natalucci, Lorenzo; Quadrini, Egidio M.; Stephen, John B.; Ubertini, Pietro; Zanichelli, Massimiliano; Zappettini, Andrea

2010-07-01

We report on the development of a 3D position sensitive prototype suitable as focal plane detector for Laue lens telescope. The basic sensitive unit is a drift strip detector based on a CZT crystal, (~19×8 mm2 area, 2.4 mm thick), irradiated transversally to the electric field direction. The anode side is segmented in 64 strips, that divide the crystal in 8 independent sensor (pixel), each composed by one collecting strip and 7 (one in common) adjacent drift strips. The drift strips are biased by a voltage divider, whereas the anode strips are held at ground. Furthermore, the cathode is divided in 4 horizontal strips for the reconstruction of the third interaction position coordinate. The 3D prototype will be made by packing 8 linear modules, each composed by one basic sensitive unit, bonded on a ceramic layer. The linear modules readout is provided by a custom front end electronics implementing a set of three RENA-3 for a total of 128 channels. The front-end electronics and the operating logics (in particular coincidence logics for polarisation measurements) are handled by a versatile and modular multi-parametric back end electronics developed using FPGA technology.

Analog front-end design of the STS/MUCH-XYTER2—full size prototype ASIC for the CBM experiment

NASA Astrophysics Data System (ADS)

Kleczek, Rafal

2017-01-01

The design of the analog front-end of the STS/MUCH-XYTER2 ASIC, a full-size prototype chip for the Silicon Tracking System (STS, based on double-sided silicon strip sensors) and Muon Chamber (MUCH, based on gas sensors) detectors is presented. The ASIC contains 128 charge processing channels, each built of a charge sensitive amplifier, a polarity selection circuit and two pulse shaping amplifiers forming two parallel signal paths. The first path is used for timing measurement with a fast discriminator. The second path allows low-noise amplitude measurement with a 5-bit continuous-time flash ADC. Different operating conditions and constraints posed by two target detectors' applications require front-end electronics flexibility to meet extended system-wise requirements. The presented circuit implements switchable shaper peaking time, gain switching and trimming, input amplifier pulsed reset circuit, fail-safe measures. The power consumption is scalable (for the STS and the MUCH modes), but limited to 10 mW/channel.

Front-end circuit for position sensitive silicon and vacuum tube photomultipliers with gain control and depth of interaction measurement

NASA Astrophysics Data System (ADS)

Herrero, Vicente; Colom, Ricardo; Gadea, Rafael; Lerche, Christoph W.; Cerdá, Joaquín; Sebastiá, Ángel; Benlloch, José M.

2007-06-01

Silicon Photomultipliers, though still under development for mass production, may be an alternative to traditional Vacuum Photomultipliers Tubes (VPMT). As a consequence, electronic front-ends initially designed for VPMT will need to be modified. In this simulation, an improved architecture is presented which is able to obtain impact position and depth of interaction of a gamma ray within a continuous scintillation crystal, using either kind of PM. A current sensitive preamplifier stage with individual gain adjustment interfaces the multi-anode PM outputs with a current division resistor network. The preamplifier stage allows to improve front-end processing delay and temporal resolution behavior as well as to increase impact position calculation resolution. Depth of interaction (DOI) is calculated from the width of the scintillation light distribution, which is related to the sum of voltages in resistor network input nodes. This operation is done by means of a high-speed current mode scheme.

A new data acquisition system for the CMS Phase 1 pixel detector

NASA Astrophysics Data System (ADS)

Kornmayer, A.

2016-12-01

A new pixel detector will be installed in the CMS experiment during the extended technical stop of the LHC at the beginning of 2017. The new pixel detector, built from four layers in the barrel region and three layers on each end of the forward region, is equipped with upgraded front-end readout electronics, specifically designed to handle the high particle hit rates created in the LHC environment. The DAQ back-end was entirely redesigned to handle the increased number of readout channels, the higher data rates per channel and the new digital data format. Based entirely on the microTCA standard, new front-end controller (FEC) and front-end driver (FED) cards have been developed, prototyped and produced with custom optical link mezzanines mounted on the FC7 AMC and custom firmware. At the same time as the new detector is being assembled, the DAQ system is set up and its integration into the CMS central DAQ system tested by running the pilot blade detector already installed in CMS. This work describes the DAQ system, integration tests and gives an outline for the activities up to commissioning the final system at CMS in 2017.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

PubMed

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

PubMed Central

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-01-01

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

THE POSSIBLE ROLE OF CORONAL STREAMERS AS MAGNETICALLY CLOSED STRUCTURES IN SHOCK-INDUCED ENERGETIC ELECTRONS AND METRIC TYPE II RADIO BURSTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kong, Xiangliang; Chen, Yao; Feng, Shiwei

2015-01-10

Two solar type II radio bursts, separated by ∼24 hr in time, are examined together. Both events are associated with coronal mass ejections (CMEs) erupting from the same active region (NOAA 11176) beneath a well-observed helmet streamer. We find that the type II emissions in both events ended once the CME/shock fronts passed the white-light streamer tip, which is presumably the magnetic cusp of the streamer. This leads us to conjecture that the closed magnetic arcades of the streamer may play a role in electron acceleration and type II excitation at coronal shocks. To examine such a conjecture, we conduct a test-particle simulationmore » for electron dynamics within a large-scale partially closed streamer magnetic configuration swept by a coronal shock. We find that the closed field lines play the role of an electron trap via which the electrons are sent back to the shock front multiple times and therefore accelerated to high energies by the shock. Electrons with an initial energy of 300 eV can be accelerated to tens of keV concentrating at the loop apex close to the shock front with a counter-streaming distribution at most locations. These electrons are energetic enough to excite Langmuir waves and radio bursts. Considering the fact that most solar eruptions originate from closed field regions, we suggest that the scenario may be important for the generation of more metric type IIs. This study also provides an explanation of the general ending frequencies of metric type IIs at or above 20-30 MHz and the disconnection issue between metric and interplanetary type IIs.« less

Complete Imageless solution for overlay front-end manufacturing

NASA Astrophysics Data System (ADS)

Herisson, David; LeCacheux, Virginie; Touchet, Mathieu; Vachellerie, Vincent; Lecarpentier, Laurent; Felten, Franck; Polli, Marco

2005-09-01

Imageless option of KLA-Tencor RDM system (Recipe Data Management) is a new method of recipe creation, using only the mask design to define alignment target and measurement parameters. This technique is potentially the easiest tool to improve recipe management of a large amount of products in logic fab. Overlay recipes are created without wafer, by using a synthetic image (copy of gds mask file) for alignment pattern and target design like shape (frame in frame) and size for the measurement. A complete gauge study on critical CMOS 90nm Gate level has been conducted to evaluate reliability and robustness of the imageless recipe. We show that Imageless limits drastically the number of templates used for recipe creation, and improves or maintains measurement capability compare to manual recipe creation (operator dependant). Imageless appears to be a suitable solution for high volume manufacturing, as shown by the results obtained on production lots.

The FE-I4 Pixel Readout Chip and the IBL Module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbero, Marlon; Arutinov, David; Backhaus, Malte

2012-05-01

FE-I4 is the new ATLAS pixel readout chip for the upgraded ATLAS pixel detector. Designed in a CMOS 130 nm feature size process, the IC is able to withstand higher radiation levels compared to the present generation of ATLAS pixel Front-End FE-I3, and can also cope with higher hit rate. It is thus suitable for intermediate radii pixel detector layers in the High Luminosity LHC environment, but also for the inserted layer at 3.3 cm known as the 'Insertable B-Layer' project (IBL), at a shorter timescale. In this paper, an introduction to the FE-I4 will be given, focusing on testmore » results from the first full size FE-I4A prototype which has been available since fall 2010. The IBL project will be introduced, with particular emphasis on the FE-I4-based module concept.« less

MuTRiG: a mixed signal Silicon Photomultiplier readout ASIC with high timing resolution and gigabit data link

NASA Astrophysics Data System (ADS)

Chen, H.; Briggl, K.; Eckert, P.; Harion, T.; Munwes, Y.; Shen, W.; Stankova, V.; Schultz-Coulon, H. C.

2017-01-01

MuTRiG is a mixed signal Silicon Photomultiplier readout ASIC designed in UMC 180 nm CMOS technology for precise timing and high event rate applications in high energy physics experiments and medical imaging. It is dedicated to the readout of the scintillating fiber detector and the scintillating tile detector of the Mu3e experiment. The MuTRiG chip extends the excellent timing performance of the STiCv3 chip with a fast digital readout for high rate applications. The high timing performance of the fully differential SiPM readout channels and 50 ps time binning TDCs are complemented by an upgraded digital readout logic and a 1.28 Gbps LVDS serial data link. The design of the chip and the characterization results of the analog front-end, TDC and the LVDS data link are presented.

A 155-dB Dynamic Range Current Measurement Front End for Electrochemical Biosensing.

PubMed

Dai, Shanshan; Perera, Rukshan T; Yang, Zi; Rosenstein, Jacob K

2016-10-01

An integrated current measurement system with ultra wide dynamic range is presented and fabricated in a 180-nm CMOS technology. Its dual-mode design provides concurrent voltage and frequency outputs, without requiring an external clock source. An integrator-differentiator core provides a voltage output with a noise floor of 11.6 fA/ [Formula: see text] and a -3 dB cutoff frequency of 1.4 MHz. It is merged with an asynchronous current-to-frequency converter, which generates an output frequency linearly proportional to the input current. Together, the voltage and frequency outputs yield a current measurement range of 155 dB, spanning from 204 fA (100 Hz) or 1.25 pA (10 kHz) to 11.6 μA. The proposed architecture's low noise, wide bandwidth, and wide dynamic range make it ideal for measurements of highly nonlinear electrochemical and electrophysiological systems.

A Three-Step Resolution-Reconfigurable Hazardous Multi-Gas Sensor Interface for Wireless Air-Quality Monitoring Applications.

PubMed

Choi, Subin; Park, Kyeonghwan; Lee, Seungwook; Lim, Yeongjin; Oh, Byungjoo; Chae, Hee Young; Park, Chan Sam; Shin, Heugjoo; Kim, Jae Joon

2018-03-02

This paper presents a resolution-reconfigurable wide-range resistive sensor readout interface for wireless multi-gas monitoring applications that displays results on a smartphone. Three types of sensing resolutions were selected to minimize processing power consumption, and a dual-mode front-end structure was proposed to support the detection of a variety of hazardous gases with wide range of characteristic resistance. The readout integrated circuit (ROIC) was fabricated in a 0.18 μm CMOS process to provide three reconfigurable data conversions that correspond to a low-power resistance-to-digital converter (RDC), a 12-bit successive approximation register (SAR) analog-to-digital converter (ADC), and a 16-bit delta-sigma modulator. For functional feasibility, a wireless sensor system prototype that included in-house microelectromechanical (MEMS) sensing devices and commercial device products was manufactured and experimentally verified to detect a variety of hazardous gases.

Epoxy Chip-in-Carrier Integration and Screen-Printed Metalization for Multichannel Microfluidic Lab-on-CMOS Microsystems.

PubMed

Li, Lin; Yin, Heyu; Mason, Andrew J

2018-04-01

The integration of biosensors, microfluidics, and CMOS instrumentation provides a compact lab-on-CMOS microsystem well suited for high throughput measurement. This paper describes a new epoxy chip-in-carrier integration process and two planar metalization techniques for lab-on-CMOS that enable on-CMOS electrochemical measurement with multichannel microfluidics. Several design approaches with different fabrication steps and materials were experimentally analyzed to identify an ideal process that can achieve desired capability with high yield and low material and tool cost. On-chip electrochemical measurements of the integrated assembly were performed to verify the functionality of the chip-in-carrier packaging and its capability for microfluidic integration. The newly developed CMOS-compatible epoxy chip-in-carrier process paves the way for full implementation of many lab-on-CMOS applications with CMOS ICs as core electronic instruments.

Noise propagation issues in Belle II pixel detector power cable

NASA Astrophysics Data System (ADS)

Iglesias, M.; Arteche, F.; Echeverria, I.; Pradas, A.; Rivetta, C.; Moser, H.-G.; Kiesling, C.; Rummel, S.; Arcega, F. J.

2018-04-01

The vertex detector used in the upgrade of High-Energy physics experiment Belle II includes DEPFET pixel detector (PXD) technology. In this complex topology the power supply units and the front-end electronics are connected through a PXD power cable bundle which may propagate the output noise from the power supplies to the vertex area. This paper presents a study of the propagation of noise caused by power converters in the PXD cable bundle based on Multi-conductor Transmission Line (MTL) theory. The work exposes the effect of the complex cable topology and shield connections on the noise propagation, which has an impact on the requirements of the power supplies. This analysis is part of the electromagnetic compatibility based design focused on functional safety to define the shield connections and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.

ICFA Instrumentation Bulletin, Volume 20, Spring 2000 Issue (SLAC-J-ICFA-020)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Va'Vra, J.

2003-10-20

Recent years have seen much dedicated work on front end electronics for hadron colliders, with a strong emphasis on radiation hardness and low cost. This has been challenging for a number of reasons, some of which are discussed further. The developments also suggest opportunities and constraints for the development of such electronics in the future.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Towards a Reduced-Wire Interface for CMUT-Based Intravascular Ultrasound Imaging Systems

PubMed Central

Lim, Jaemyung; Tekes, Coskun; Degertekin, F. Levent; Ghovanloo, Maysam

2016-01-01

Having intravascular ultrasound (IVUS) imaging capability on guide wires used in cardiovascular interventions may eliminate the need for separate IVUS catheters and expand the use of IVUS in a larger portion of the vasculature. High frequency capacitive micro machined ultrasonic transducer (CMUT) arrays should be integrated with interface electronics and placed on the guide wire for this purpose. Besides small size, this system-on-a-chip (SoC) front-end should connect to the back-end imaging system with a minimum number of wires to preserve the critical mechanical properties of the guide wire. We present a 40 MHz CMUT array interface SoC, which will eventually use only two wires for power delivery and transmits image data using a combination of analog-to-time conversion (ATC) and an impulse radio ultra-wideband (IR-UWB) wireless link. The proof-of-concept prototype ASIC consumes only 52.8 mW and occupies 4.07 mm2 in a 0.35-μm standard CMOS process. A rectifier and regulator power the rest of the SoC at 3.3 V from a 10 MHz power carrier that is supplied through a 2.4 m micro-coax cable with an overall efficiency of 49.1%. Echo signals from an 8-element CMUT array are amplified by a transimpedance amplifier (TIA) array and down-converted to baseband by quadrature sampling using a 40 MHz clock, derived from the power carrier. The ATC generates pulse-width-modulated (PWM) samples at 2 × 10 MS/s with 6 bit resolution, while the entire system achieved 5.1 ENOB. Preliminary images from the prototype system are presented, and alternative data transmission and possible future directions towards practical implementation are discussed. PMID:27662686

Towards a Reduced-Wire Interface for CMUT-Based Intravascular Ultrasound Imaging Systems.

PubMed

Lim, Jaemyung; Tekes, Coskun; Degertekin, F Levent; Ghovanloo, Maysam

2017-04-01

Having intravascular ultrasound (IVUS) imaging capability on guide wires used in cardiovascular interventions may eliminate the need for separate IVUS catheters and expand the use of IVUS in a larger portion of the vasculature. High frequency capacitive micro machined ultrasonic transducer (CMUT) arrays should be integrated with interface electronics and placed on the guide wire for this purpose. Besides small size, this system-on-a-chip (SoC) front-end should connect to the back-end imaging system with a minimum number of wires to preserve the critical mechanical properties of the guide wire. We present a 40 MHz CMUT array interface SoC, which will eventually use only two wires for power delivery and transmits image data using a combination of analog-to-time conversion (ATC) and an impulse radio ultra-wideband (IR-UWB) wireless link. The proof-of-concept prototype ASIC consumes only 52.8 mW and occupies 4.07 [Formula: see text] in a 0.35- [Formula: see text] standard CMOS process. A rectifier and regulator power the rest of the SoC at 3.3 V from a 10 MHz power carrier that is supplied through a 2.4 m micro-coax cable with an overall efficiency of 49.1%. Echo signals from an 8-element CMUT array are amplified by a transimpedance amplifier (TIA) array and down-converted to baseband by quadrature sampling using a 40 MHz clock, derived from the power carrier. The ATC generates pulse-width-modulated (PWM) samples at 2 × 10 MS/s with 6 bit resolution, while the entire system achieved 5.1 ENOB. Preliminary images from the prototype system are presented, and alternative data transmission and possible future directions towards practical implementation are discussed.

Design and Measurement of a Low-Noise 64-Channels Front-End Readout ASIC for CdZnTe Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gan, Bo; Wei, Tingcun; Gao, Wu

Cadmium zinc telluride (CdZnTe) detectors, as one of the principal detectors for the next-generation X-ray and γ-ray imagers, have high energy resolution and supporting electrode patterning in the radiation environment at room-temperature. In the present, a number of internationally renowned research institutions and universities are actively using these detector systems to carry out researches of energy spectrum analysis, medical imaging, materials characterization, high-energy physics, nuclear plant monitoring, and astrophysics. As the most important part of the readout system for the CdZnTe detector, the front-end readout application specific integrated circuit (ASIC) would have an important impact on the performances of themore » whole detector system. In order to ensure the small signal to noise ratio (SNR) and sufficient range of the output signal, it is necessary to design a front-end readout ASIC with very low noise and very high dynamic range. In addition, radiation hardness should be considered when the detectors are utilized in the space applications and high energy physics experiments. In this paper, we present measurements and performances of a novel multi-channel radiation-hardness low-noise front-end readout ASIC for CdZnTe detectors. The readout circuits in each channel consist of charge sensitive amplifier, leakage current compensation circuit (LCC), CR-RC shaper, S-K filter, inverse proportional amplifier, peak detect and hold circuit (PDH), discriminator and trigger logic, time sequence control circuit and driving buffer. All of 64 readout channels' outputs enter corresponding inputs of a 64 channel multiplexer. The output of the mux goes directly out of the chip via the output buffer. The 64-channel readout ASIC is implemented using the TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 2.7 mm x 8 mm. At room temperature, the equivalent noise level of a typical channel reaches 66 e{sup -} (rms) at zero farad for a power consumption of 8 mW per channel. The linearity error is lower than 1% and the overall gain of the readout channel is 165 V/pC. The crosstalk between the channels is less than 3%. By connecting the readout ASIC to a CdZnTe detector, we obtained a γ-ray spectrum, the energy resolution is 5.1% at the 59.5-keV line of {sup 241}Am source. (authors)« less

Characterisation results of the CMOS VISNIR spectral band detector for the METimage instrument

NASA Astrophysics Data System (ADS)

Pratlong, Jérôme; Schmuelling, Frank; Benitez, Victor; Breart De Boisanger, Michel; Skegg, Michael; Simpson, Robert; Bowring, Steve; Krzizok, Natalie

2017-09-01

The METimage instrument is part of the EPS-SG (EUMETSAT Polar System Second Generation) program. It will be situated on the MetOp-SG platform which in operation has an objective of collecting data for meteorology and climate monitoring as well as their forecasting. Teledyne e2v has developed and characterised the CMOS VISNIR detector flight module part of the METimage instrument. This paper will focus on the silicon results obtained from the CMOS VISNIR detector flight model. The detector is a large multi-linear device composed of 7 spectral bands covering a wavelength range from 428 nm to 923 nm (some bands are placed twice and added together to enhance the signal-to-noise performance). This detector uses a 4T pixel, with a size of 250μm square, presenting challenges to achieve good charge transfer efficiency with high conversion factor and good linearity for signal levels up to 2M electrons and with high line rates. Low noise has been achieved using correlated double sampling to suppress the read-out noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. The photodiode occupies a significant fraction of the large pixel area. This makes it possible to meet the detection efficiency when front illuminated. A thicker than standard epitaxial silicon is used to improve NIR response. However, the dielectric stack on top of the sensor produces Fabry-Perot étalon effects, which are problematic for narrow band illumination as this causes the detection efficiency to vary significantly over a small wavelength range. In order to reduce this effect and to meet the specification, the silicon manufacturing process has been modified. The flight model will have black coating deposited between each spectral channel, onto the active silicon regions.

A low-cost CMOS-MEMS piezoresistive accelerometer with large proof mass.

PubMed

Khir, Mohd Haris Md; Qu, Peng; Qu, Hongwei

2011-01-01

This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology. The device fabrication process consisted of a standard CMOS process for sensor configuration, and a deep reactive ion etching (DRIE) based post-CMOS microfabrication for MEMS structure release. A bulk single-crystal silicon (SCS) substrate is included in the proof mass to increase sensor sensitivity. In device design and analysis, the self heating of the polysilicon piezoresistors and its effect to the sensor performance is also discussed. With a low operating power of 1.5 mW, the accelerometer demonstrates a sensitivity of 0.077 mV/g prior to any amplification. Dynamic tests have been conducted with a high-end commercial calibrating accelerometer as reference.

Monolithic optical phased-array transceiver in a standard SOI CMOS process.

PubMed

Abediasl, Hooman; Hashemi, Hossein

2015-03-09

Monolithic microwave phased arrays are turning mainstream in automotive radars and high-speed wireless communications fulfilling Gordon Moores 1965 prophecy to this effect. Optical phased arrays enable imaging, lidar, display, sensing, and holography. Advancements in fabrication technology has led to monolithic nanophotonic phased arrays, albeit without independent phase and amplitude control ability, integration with electronic circuitry, or including receive and transmit functions. We report the first monolithic optical phased array transceiver with independent control of amplitude and phase for each element using electronic circuitry that is tightly integrated with the nanophotonic components on one substrate using a commercial foundry CMOS SOI process. The 8 × 8 phased array chip includes thermo-optical tunable phase shifters and attenuators, nano-photonic antennas, and dedicated control electronics realized using CMOS transistors. The complex chip includes over 300 distinct optical components and over 74,000 distinct electrical components achieving the highest level of integration for any electronic-photonic system.

A Front-End Electronics Prototype Based on Gigabit Ethernet for the ATLAS Small-Strip Thin Gap Chamber

NASA Astrophysics Data System (ADS)

Hu, Kun; Lu, Houbing; Wang, Xu; Li, Feng; Wang, Xinxin; Geng, Tianru; Yang, Hang; Liu, Shengquan; Han, Liang; Jin, Ge

2017-06-01

A front-end electronics prototype for the ATLAS small-strip Thin Gap Chamber (sTGC) based on gigabit Ethernet has been developed. The prototype is designed to read out signals of pads, wires, and strips of the sTGC detector. The prototype includes two VMM2 chips developed to read out the signals of the sTGC, a Xilinx Kintex-7 field-programmable gate array (FPGA) used for the VMM2 configuration and the events storage, and a gigabit Ethernet transceiver PHY chip for interfacing with a computer. The VMM2 chip is designed for the readout of the Micromegas detector and sTGC detector, which is composed of 64 linear front-end channels. Each channel integrates a charge-sensitive amplifier, a shaper, several analog-to-digital converters, and other digital functions. For a bunch-crossing interval of 25 ns, events are continuously read out by the FPGA and forwarded to the computer. The interface between the computer and the prototype has been measured to reach an error-free rate of 900 Mb/s, therefore making a very effective use of the available bandwidth. Additionally, the computer can control several prototypes of this kind simultaneously via the Ethernet interface. At present, the prototype will be used for the sTGC performance test. The features of the prototype are described in detail.

Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

NASA Astrophysics Data System (ADS)

Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

Tests with beam setup of the TileCal phase-II upgrade electronics

NASA Astrophysics Data System (ADS)

Reward Hlaluku, Dingane

2017-09-01

The LHC has planned a series of upgrades culminating in the High Luminosity LHC which will have an average luminosity 5-7 times larger than the nominal Run-2 value. The ATLAS Tile calorimeter plans to introduce a new readout architecture by completely replacing the back-end and front-end electronics for the High Luminosity LHC. The photomultiplier signals will be fully digitized and transferred for every bunch crossing to the off-detector Tile PreProcessor. The Tile PreProcessor will further provide preprocessed digital data to the first level of trigger with improved spatial granularity and energy resolution in contrast to the current analog trigger signals. A single super-drawer module commissioned with the phase-II upgrade electronics is to be inserted into the real detector to evaluate and qualify the new readout and trigger concepts in the overall ATLAS data acquisition system. This new super-drawer, so-called hybrid Demonstrator, must provide analog trigger signals for backward compatibility with the current system. This Demonstrator drawer has been inserted into a Tile calorimeter module prototype to evaluate the performance in the lab. In parallel, one more module has been instrumented with two other front-end electronics options based on custom ASICs (QIE and FATALIC) which are under evaluation. These two modules together with three other modules composed of the current system electronics were exposed to different particles and energies in three test-beam campaigns during 2015 and 2016.

Efficient demodulation scheme for rolling-shutter-patterning of CMOS image sensor based visible light communications.

PubMed

Chen, Chia-Wei; Chow, Chi-Wai; Liu, Yang; Yeh, Chien-Hung

2017-10-02

Recently even the low-end mobile-phones are equipped with a high-resolution complementary-metal-oxide-semiconductor (CMOS) image sensor. This motivates using a CMOS image sensor for visible light communication (VLC). Here we propose and demonstrate an efficient demodulation scheme to synchronize and demodulate the rolling shutter pattern in image sensor based VLC. The implementation algorithm is discussed. The bit-error-rate (BER) performance and processing latency are evaluated and compared with other thresholding schemes.

An undulator based soft x-ray source for microscopy on the Duke electron storage ring

NASA Astrophysics Data System (ADS)

Johnson, Lewis Elgin

1998-09-01

This dissertation describes the design, development, and installation of an undulator-based soft x-ray source on the Duke Free Electron Laser laboratory electron storage ring. Insertion device and soft x-ray beamline physics and technology are all discussed in detail. The Duke/NIST undulator is a 3.64-m long hybrid design constructed by the Brobeck Division of Maxwell Laboratories. Originally built for an FEL project at the National Institute of Standards and Technology, the undulator was acquired by Duke in 1992 for use as a soft x-ray source for the FEL laboratory. Initial Hall probe measurements on the magnetic field distribution of the undulator revealed field errors of more than 0.80%. Initial phase errors for the device were more than 11 degrees. Through a series of in situ and off-line measurements and modifications we have re-tuned the magnet field structure of the device to produce strong spectral characteristics through the 5th harmonic. A low operating K has served to reduce the effects of magnetic field errors on the harmonic spectral content. Although rms field errors remained at 0.75%, we succeeded in reducing phase errors to less than 5 degrees. Using trajectory simulations from magnetic field data, we have computed the spectral output given the interaction of the Duke storage ring electron beam and the NIST undulator. Driven by a series of concerns and constraints over maximum utility, personnel safety and funding, we have also constructed a unique front end beamline for the undulator. The front end has been designed for maximum throughput of the 1st harmonic around 40A in its standard mode of operation. The front end has an alternative mode of operation which transmits the 3rd and 5th harmonics. This compact system also allows for the extraction of some of the bend magnet produced synchrotron and transition radiation from the storage ring. As with any well designed front end system, it also provides excellent protection to personnel and to the storage ring. A diagnostic beamline consisting of a transmission grating spectrometer and scanning wire beam profile monitor was constructed to measure the spatial and spectral characteristics of the undulator radiation. Test of the system with a circulating electron beam has confirmed the magnetic and focusing properties of the undulator, and verified that it can be used without perturbing the orbit of the beam.

High-voltage pixel sensors for ATLAS upgrade

NASA Astrophysics Data System (ADS)

Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

2014-11-01

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

Perspective: 2D for beyond CMOS

NASA Astrophysics Data System (ADS)

Robinson, Joshua A.

2018-05-01

Two-Dimensional (2D) materials have been a "beyond CMOS" focus for more than a decade now, and we are on the verge of a variety of breakthroughs in the science to enable their incorporation into next generation electronics. This perspective discusses some of the challenges that must be overcome, as well as various opportunities that await us in the world of 2D for beyond CMOS.

Electronics design of the RPC system for the OPERA muon spectrometer

NASA Astrophysics Data System (ADS)

Acquafredda, R.; Ambrosio, M.; Balsamo, E.; Barichello, G.; Bergnoli, A.; Consiglio, L.; Corradi, G.; dal Corso, F.; Felici, G.; Manea, C.; Masone, V.; Parascandolo, P.; Sorrentino, G.

2004-09-01

The present document describes the front-end electronics of the RPC system that instruments the magnet muon spectrometer of the OPERA experiment. The main task of the OPERA spectrometer is to provide particle tracking information for muon identification and simplify the matching between the Precision Trackers. As no trigger has been foreseen for the experiment, the spectrometer electronics must be self-triggered with single-plane readout capability. Moreover, precision time information must be added within each event frame for off-line reconstruction. The read-out electronics is made of three different stages: the Front-End Boards (FEBs) system, the Controller Boards (CBs) system and the Trigger Boards (TBs) system. The FEB system provides discrimination of the strip incoming signals; a FAST-OR output of the input signals is also available for trigger plane signal generation. FEB signals are acquired by the CB system that provides the zero suppression and manages the communication to the DAQ and Slow Control. A Trigger Board allows to operate in both self-trigger mode (the FEB's FAST-OR signal starts the plane acquisition) or in external-trigger mode (different conditions can be set on the FAST-OR signals generated from different planes).

Testing of Front End Electronics for 10ps Time of Flight Detectors

NASA Astrophysics Data System (ADS)

Kimball, Matthew; EIC PID Consortium Collaboration

2016-09-01

To fully achieve the physics goals of the future Electron Ion Collider (EIC), continued development of the detectors involved is needed. One area of research involves improving the timing resolution of Time of Flight (ToF) detectors from 100ps to 10ps. When the timing resolution of these ToF detectors is improved, better particle identification can be achieved. In addition, as ToF detectors are being constructed with ever improving timing resolution, the need to improve the high speed performance of the fast electronics used in their front-end electronics (FEE) increases. A series of careful measurements has been performed to investigate the performance and efficiency of each element in the FEE chain. The focus of these tests lies on the amplitude transmission efficiency of the high speed signals as a function of frequency, also known as the bandwidth. The components tested include balanced to unbalanced (balun) boards, signal pre-amps, and waveform digitizers. These tests were performed on individual components and with all elements connected over a frequency range of 1MHz to 1GHz. The results of these tests will be presented. This research was supported by US DOE MENP Grant DE-FG02-03ER41243.

The phase 1 upgrade of the CMS Pixel Front-End Driver

NASA Astrophysics Data System (ADS)

Friedl, M.; Pernicka, M.; Steininger, H.

2010-12-01

The pixel detector of the CMS experiment at the LHC is read out by analog optical links, sending the data to 9U VME Front-End Driver (FED) boards located in the electronics cavern. There are plans for the phase 1 upgrade of the pixel detector (2016) to add one more layer, while significantly cutting down the overall material budget. At the same time, the optical data transmission will be replaced by a serialized digital scheme. A plug-in board solution with a high-speed digital optical receiver has been developed for the Pixel-FED readout boards and will be presented along with first tests of the future optical link.

Flexible implementation of front-end bioelectric signal amplifier using FPAA for telemedicine system.

PubMed

Chan, U Fai; Chan, Wai Wong; Pun, Sio Hang; Vai, Mang I; Mak, Peng Un

2007-01-01

Traditional/Current electronic circuits for Telemedicine have significant performance on certain bioelectric signal detection. However, it is rarely seen that can handle multiple signals without changing of hardware. This paper introduces a general front-end amplifier for various bioelectric signals based on Field Programmable Analogy Array (FPAA) Technology. Employing FPAA technology, the implemented amplifier can be adapted for various bioelectric signals without alternating the circuitry while its compact size (core parts < 2 cm2) provides an alternative solution for miniaturized Telemedicine system and Wearable Devices. The proposed design implementation has demonstrated, through successfully ECG and EMG signal extractions, a quick way to miniaturize analog biomedical circuit in a convenient and cost effective way.

Monolithic CMOS imaging x-ray spectrometers

NASA Astrophysics Data System (ADS)

Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

2014-07-01

The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and spectrally resolved without saturation. We present details of our camera design and device performance with particular emphasis on those aspects of interest to single photon counting x-ray astronomy. These features include read noise, x-ray spectral response and quantum efficiency. Funding for this work has been provided in large part by NASA Grant NNX09AE86G and a grant from the Betty and Gordon Moore Foundation.

Advanced CMOS Radiation Effects Testing and Analysis

NASA Technical Reports Server (NTRS)

Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.;

Single-photon sensitive fast ebCMOS camera system for multiple-target tracking of single fluorophores: application to nano-biophotonics

NASA Astrophysics Data System (ADS)

Cajgfinger, Thomas; Chabanat, Eric; Dominjon, Agnes; Doan, Quang T.; Guerin, Cyrille; Houles, Julien; Barbier, Remi

2011-03-01

Nano-biophotonics applications will benefit from new fluorescent microscopy methods based essentially on super-resolution techniques (beyond the diffraction limit) on large biological structures (membranes) with fast frame rate (1000 Hz). This trend tends to push the photon detectors to the single-photon counting regime and the camera acquisition system to real time dynamic multiple-target tracing. The LUSIPHER prototype presented in this paper aims to give a different approach than those of Electron Multiplied CCD (EMCCD) technology and try to answer to the stringent demands of the new nano-biophotonics imaging techniques. The electron bombarded CMOS (ebCMOS) device has the potential to respond to this challenge, thanks to the linear gain of the accelerating high voltage of the photo-cathode, to the possible ultra fast frame rate of CMOS sensors and to the single-photon sensitivity. We produced a camera system based on a 640 kPixels ebCMOS with its acquisition system. The proof of concept for single-photon based tracking for multiple single-emitters is the main result of this paper.

Beam dynamics performances and applications of a low-energy electron-beam magnetic bunch compressor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokop, C. R.; Piot, P.; Carlsten, B. E.

2013-08-01

Many front-end applications of electron linear accelerators rely on the production of temporally compressed bunches. The shortening of electron bunches is often realized with magnetic bunch compressors located in high-energy sections of accelerators. Magnetic compression is subject to collective effects including space charge and self interaction via coherent synchrotron radiation. In this paper we explore the application of magnetic compression to low-energy (~40MeV), high-charge (nC) electron bunches with low normalized transverse emittances (<5@mm).

Performance optimization of detector electronics for millimeter laser ranging

NASA Technical Reports Server (NTRS)

Cova, Sergio; Lacaita, A.; Ripamonti, Giancarlo

1993-01-01

The front-end electronic circuitry plays a fundamental role in determining the performance actually obtained from ultrafast and highly sensitive photodetectors. We deal here with electronic problems met working with microchannel plate photomultipliers (MCP-PMTs) and single photon avalanche diodes (SPADs) for detecting single optical photons and measuring their arrival time with picosecond resolution. The performance of available fast circuits is critically analyzed. Criteria for selecting the most suitable electronics are derived and solutions for exploiting the detector performance are presented and discussed.

1 mm3-sized optical neural stimulator based on CMOS integrated photovoltaic power receiver

NASA Astrophysics Data System (ADS)

Tokuda, Takashi; Ishizu, Takaaki; Nattakarn, Wuthibenjaphonchai; Haruta, Makito; Noda, Toshihiko; Sasagawa, Kiyotaka; Sawan, Mohamad; Ohta, Jun

2018-04-01

In this work, we present a simple complementary metal-oxide semiconductor (CMOS)-controlled photovoltaic power-transfer platform that is suitable for very small (less than or equal to 1-2 mm) electronic devices such as implantable health-care devices or distributed nodes for the Internet of Things. We designed a 1.25 mm × 1.25 mm CMOS power receiver chip that contains integrated photovoltaic cells. We characterized the CMOS-integrated power receiver and successfully demonstrated blue light-emitting diode (LED) operation powered by infrared light. Then, we integrated the CMOS chip and a few off-chip components into a 1-mm3 implantable optogenetic stimulator, and demonstrated the operation of the device.

The effects of the geosynchronous energetic particle radiation environment on spacecraft charging phenomena

NASA Technical Reports Server (NTRS)

Reagan, J. B.; Imhof, W. L.; Gaines, E. E.

1977-01-01

The energetic electron environment at the geosynchronous orbit is responsible for a variety of adverse charging effects on spacecraft components. The most serious of these is the degradation and failure of a complementary-metal-oxide-semiconductor (CMOS) electronic components as a result of internal charge-buildup induced by the energetic electrons. Efforts to accurately determine the expected lifetime of these components in this orbit are hampered by the lack of detailed knowledge of the electron spectrum and intensity, particularly of the more penetrating energies greater than 1.5 MeV. This problem is illustrated through the calculation of the dose received by a CMOS device from the energetic electrons and associated bremsstrahlung as a function of aluminum shielding thickness using the NASA AE-6 and the Aerospace measured electron environments. Two computational codes which were found to be in good agreement were used to perform the calculations. For a given shielding thickness the dose received with the two radiation environments differ by as much as a factor of seven with a corresponding variation in lifetime of the CMOS.

Development of BPM Electronics at the JLAB FEL

NASA Astrophysics Data System (ADS)

Sexton, D.; Evtushenko, P.; Jordan, K.; Yan, J.; Dutton, S.; Moore, W.; Evans, R.; Coleman, J.

2006-11-01

A new version of BPM electronics based on the AD8362 RMS detector, which is a direct RF to DC converter, is under development at the JLAB FEL. Each of these new BPM electronics utilizes an embedded ColdFire Microprocessor for data processing and communication with the EPICS control system via TCP/IP. The ColdFire runs RTEMS, which is an open source real-time operating system. The JLAB FEL is a SRF Energy Recovery LINAC capable of running up to 10 mA CW beam with a 74.85 MHz micropulse frequency. For diagnostic reasons and for machine tune up, the micropulse frequency can be reduced to 1.17 MHz, which corresponds to about 160 μA of beam current. It is required that the BPM system would be functional for all micropulse frequencies. By taking into account the headroom for the beam steering and current variations the dynamic range of the RF front end is required to be about 60 dB. A BPM resolution of at least 100 μm is required, whereas better resolution is very desirable to make it possible for more accurate measurements of the electron beam optics. Some results of the RF front end development are presented as well as the first measurements made with an electron beam.

Development of BPM Electronics at the JLAB FEL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sexton, D.; Evtushenko, P.; Jordan, K.

2006-11-20

A new version of BPM electronics based on the AD8362 RMS detector, which is a direct RF to DC converter, is under development at the JLAB FEL. Each of these new BPM electronics utilizes an embedded ColdFire Microprocessor for data processing and communication with the EPICS control system via TCP/IP. The ColdFire runs RTEMS, which is an open source real-time operating system. The JLAB FEL is a SRF Energy Recovery LINAC capable of running up to 10 mA CW beam with a 74.85 MHz micropulse frequency. For diagnostic reasons and for machine tune up, the micropulse frequency can be reducedmore » to 1.17 MHz, which corresponds to about 160 {mu}A of beam current. It is required that the BPM system would be functional for all micropulse frequencies. By taking into account the headroom for the beam steering and current variations the dynamic range of the RF front end is required to be about 60 dB. A BPM resolution of at least 100 {mu}m is required, whereas better resolution is very desirable to make it possible for more accurate measurements of the electron beam optics. Some results of the RF front end development are presented as well as the first measurements made with an electron beam.« less

Development of BPM Electronics at the JLAB FEL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daniel Sexton; Pavel Evtushenko; Kevin Jordan

2006-05-01

A new version of BPM electronics based on the AD8362 RMS detector, which is a direct RF to DC converter, is under development at the JLAB FEL. Each of these new BPM electronics utilizes an embedded ColdFire Microprocessor for data processing and communication with the EPICS control system via TCP/IP. The ColdFire runs RTEMS, which is an open source real-time operating system. The JLAB FEL is a SRF Energy Recovery LINAC capable of running up to 10 mA CW beam with the micropulse up to 74.85 MHz. For diagnostic reasons and for the machine tune up, the micropulse frequency canmore » be reduced to 1.17 MHz, which corresponds to about 160 ?A of beam current. It is required that the BPM system would be functional for all micropulse frequencies. By taking into account the headroom for the beam steering and current variations the dynamic range of the RF front end is required to be about 60 dB. A BPM resolution of at least 100 ?m is required, whereas better resolution is very desirable to make it possible for more accurate measurements of the electron beam optics. Some results of the RF front end development are presented as well as the first measurements made with an electron beam.« less

Fully Integrated Biopotential Acquisition Analog Front-End IC

PubMed Central

Song, Haryong; Park, Yunjong; Kim, Hyungseup; Ko, Hyoungho

2015-01-01

A biopotential acquisition analog front-end (AFE) integrated circuit (IC) is presented. The biopotential AFE includes a capacitively coupled chopper instrumentation amplifier (CCIA) to achieve low input referred noise (IRN) and to block unwanted DC potential signals. A DC servo loop (DSL) is designed to minimize the offset voltage in the chopper amplifier and low frequency respiration artifacts. An AC coupled ripple rejection loop (RRL) is employed to reduce ripple due to chopper stabilization. A capacitive impedance boosting loop (CIBL) is designed to enhance the input impedance and common mode rejection ratio (CMRR) without additional power consumption, even under an external electrode mismatch. The AFE IC consists of two-stage CCIA that include three compensation loops (DSL, RRL, and CIBL) at each CCIA stage. The biopotential AFE is fabricated using a 0.18 µm one polysilicon and six metal layers (1P6M) complementary metal oxide semiconductor (CMOS) process. The core chip size of the AFE without input/output (I/O) pads is 10.5 mm2. A fourth-order band-pass filter (BPF) with a pass-band in the band-width from 1 Hz to 100 Hz was integrated to attenuate unwanted signal and noise. The overall gain and band-width are reconfigurable by using programmable capacitors. The IRN is measured to be 0.94 µVRMS in the pass band. The maximum amplifying gain of the pass-band was measured as 71.9 dB. The CIBL enhances the CMRR from 57.9 dB to 67 dB at 60 Hz under electrode mismatch conditions. PMID:26437404

An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras.

PubMed

Bolotnikov, A E; Ackley, K; Camarda, G S; Cherches, C; Cui, Y; De Geronimo, G; Fried, J; Hodges, D; Hossain, A; Lee, W; Mahler, G; Maritato, M; Petryk, M; Roy, U; Salwen, C; Vernon, E; Yang, G; James, R B

2015-07-01

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm(3) detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays' performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

REACH: a high-performance wireless base station front end

NASA Astrophysics Data System (ADS)

Nettleton, Ray W.

1996-01-01

The link budget determines the relationships between range, capacity and transmitted power for any wireless technology. In every case it is a key determinant of the system's performance from both an engineering and an economic point of view. Unfortunately, the new 1.9 GHz PCS systems will begin life with an inherent 7 dB disadvantage over the 800 MHz cellular due to propagation differences. Additionally, system wiring and electronics often degrade performance by a further 5 to 10 dB due to long coaxial runs and noisy front end amplification, both of which are harder issues to deal with at 1.9 GHz than at 800 MHz. SCT's REACHTM products address these shortcomings by packaging critical components--front end amplification, filtering, etc.--in a compact cryoelectronic package intended for mounting near the antennas of the base station. In a recent trial with Qualcomm in San Diego, this package improved the CDMA uplink budget by 6 dB--enough to halve the number of base stations that are needed in most areas. This paper examines the technical and economic ramifications of the REACHTM product.

FERMI: a digital Front End and Readout MIcrosystem for high resolution calorimetry

NASA Astrophysics Data System (ADS)

Alexanian, H.; Appelquist, G.; Bailly, P.; Benetta, R.; Berglund, S.; Bezamat, J.; Blouzon, F.; Bohm, C.; Breveglieri, L.; Brigati, S.; Cattaneo, P. W.; Dadda, L.; David, J.; Engström, M.; Genat, J. F.; Givoletti, M.; Goggi, V. G.; Gong, S.; Grieco, G. M.; Hansen, M.; Hentzell, H.; Holmberg, T.; Höglund, I.; Inkinen, S. J.; Kerek, A.; Landi, C.; Ledortz, O.; Lippi, M.; Lofstedt, B.; Lund-Jensen, B.; Maloberti, F.; Mutz, S.; Nayman, P.; Piuri, V.; Polesello, G.; Sami, M.; Savoy-Navarro, A.; Schwemling, P.; Stefanelli, R.; Sundblad, R.; Svensson, C.; Torelli, G.; Vanuxem, J. P.; Yamdagni, N.; Yuan, J.; Ödmark, A.; Fermi Collaboration

1995-02-01

We present a digital solution for the front-end electronics of high resolution calorimeters at future colliders. It is based on analogue signal compression, high speed {A}/{D} converters, a fully programmable pipeline and a digital signal processing (DSP) chain with local intelligence and system supervision. This digital solution is aimed at providing maximal front-end processing power by performing waveform analysis using DSP methods. For the system integration of the multichannel device a multi-chip, silicon-on-silicon multi-chip module (MCM) has been adopted. This solution allows a high level of integration of complex analogue and digital functions, with excellent flexibility in mixing technologies for the different functional blocks. This type of multichip integration provides a high degree of reliability and programmability at both the function and the system level, with the additional possibility of customising the microsystem to detector-specific requirements. For enhanced reliability in high radiation environments, fault tolerance strategies, i.e. redundancy, reconfigurability, majority voting and coding for error detection and correction, are integrated into the design.

An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

DOE PAGES

Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.; ...

2015-07-28

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm 3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readoutmore » electronics. The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

Quantitative evaluation of the accuracy and variance of individual pixels in a scientific CMOS (sCMOS) camera for computational imaging

NASA Astrophysics Data System (ADS)

Watanabe, Shigeo; Takahashi, Teruo; Bennett, Keith

2017-02-01

The"scientific" CMOS (sCMOS) camera architecture fundamentally differs from CCD and EMCCD cameras. In digital CCD and EMCCD cameras, conversion from charge to the digital output is generally through a single electronic chain, and the read noise and the conversion factor from photoelectrons to digital outputs are highly uniform for all pixels, although quantum efficiency may spatially vary. In CMOS cameras, the charge to voltage conversion is separate for each pixel and each column has independent amplifiers and analog-to-digital converters, in addition to possible pixel-to-pixel variation in quantum efficiency. The "raw" output from the CMOS image sensor includes pixel-to-pixel variability in the read noise, electronic gain, offset and dark current. Scientific camera manufacturers digitally compensate the raw signal from the CMOS image sensors to provide usable images. Statistical noise in images, unless properly modeled, can introduce errors in methods such as fluctuation correlation spectroscopy or computational imaging, for example, localization microscopy using maximum likelihood estimation. We measured the distributions and spatial maps of individual pixel offset, dark current, read noise, linearity, photoresponse non-uniformity and variance distributions of individual pixels for standard, off-the-shelf Hamamatsu ORCA-Flash4.0 V3 sCMOS cameras using highly uniform and controlled illumination conditions, from dark conditions to multiple low light levels between 20 to 1,000 photons / pixel per frame to higher light conditions. We further show that using pixel variance for flat field correction leads to errors in cameras with good factory calibration.

Registration of Large Motion Blurred Images

DTIC Science & Technology

2016-05-09

in handling the dynamics of the capturing system, for example, a drone. CMOS sensors , used in recent times, when employed in these cameras produce...handling the dynamics of the capturing system, for example, a drone. CMOS sensors , used in recent times, when employed in these cameras produce two types...blur in the captured image when there is camera motion during exposure. However, contemporary CMOS sensors employ an electronic rolling shutter (RS

Design and fabrication of vertically-integrated CMOS image sensors.

PubMed

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

PubMed Central

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

NASA Astrophysics Data System (ADS)

Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

2018-05-01

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass

PubMed Central

Khir, Mohd Haris Md; Qu, Peng; Qu, Hongwei

2011-01-01

This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology. The device fabrication process consisted of a standard CMOS process for sensor configuration, and a deep reactive ion etching (DRIE) based post-CMOS microfabrication for MEMS structure release. A bulk single-crystal silicon (SCS) substrate is included in the proof mass to increase sensor sensitivity. In device design and analysis, the self heating of the polysilicon piezoresistors and its effect to the sensor performance is also discussed. With a low operating power of 1.5 mW, the accelerometer demonstrates a sensitivity of 0.077 mV/g prior to any amplification. Dynamic tests have been conducted with a high-end commercial calibrating accelerometer as reference. PMID:22164052

A silicon-on-insulator complementary-metal-oxide-semiconductor compatible flexible electronics technology

NASA Astrophysics Data System (ADS)

Tu, Hongen; Xu, Yong

2012-07-01

This paper reports a simple flexible electronics technology that is compatible with silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) processes. Compared with existing technologies such as direct fabrication on flexible substrates and transfer printing, the main advantage of this technology is its post-SOI-CMOS compatibility. Consequently, high-performance and high-density CMOS circuits can be first fabricated on SOI wafers using commercial foundry and then be integrated into flexible substrates. The yield is also improved by eliminating the transfer printing step. Furthermore, this technology allows the integration of various sensors and microfluidic devices. To prove the concept of this technology, flexible MOSFETs have been demonstrated.

Progress on the upgrade of the CMS Hadron Calorimeter Front-End electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Jake; Whitmore, Juliana; /Fermilab

2011-11-01

We present a scheme to upgrade the CMS HCAL front-end electronics in the second long shutdown to upgrade the LHC (LS2), which is expected to occur around 2018. The HCAL electronics upgrade is required to handle the major instantaneous luminosity increase (up to 5 * 10{sup 34} cm{sup -2} s{sup -1}) and an expected integrated luminosity of {approx}3000 fb{sup -1}. A key aspect of the HCAL upgrade is to read out longitudinal segmentation information to improve background rejection, energy resolution, and electron isolation at the L1 trigger. This paper focuses on the requirements for the new electronics and on themore » proposed solutions. The requirements include increased channel count, additional timing capabilities, and additional redundancy. The electronics are required to operate in a harsh environment and are constrained by the existing infrastructure. The proposed solutions span from chip level to system level. They include the development of a new ASIC ADC, the design and testing of higher speed transmitters to handle the increased data volume, the evaluation and use of circuits from other developments, evaluation of commercial FPGAs, better thermal design, and improvements in the overall readout architecture. We will report on the progress of the designs for these upgraded systems, along with performance requirements and initial design studies.« less

A front-end readout Detector Board for the OpenPET electronics system

NASA Astrophysics Data System (ADS)

Choong, W.-S.; Abu-Nimeh, F.; Moses, W. W.; Peng, Q.; Vu, C. Q.; Wu, J.-Y.

2015-08-01

We present a 16-channel front-end readout board for the OpenPET electronics system. A major task in developing a nuclear medical imaging system, such as a positron emission computed tomograph (PET) or a single-photon emission computed tomograph (SPECT), is the electronics system. While there are a wide variety of detector and camera design concepts, the relatively simple nature of the acquired data allows for a common set of electronics requirements that can be met by a flexible, scalable, and high-performance OpenPET electronics system. The analog signals from the different types of detectors used in medical imaging share similar characteristics, which allows for a common analog signal processing. The OpenPET electronics processes the analog signals with Detector Boards. Here we report on the development of a 16-channel Detector Board. Each signal is digitized by a continuously sampled analog-to-digital converter (ADC), which is processed by a field programmable gate array (FPGA) to extract pulse height information. A leading edge discriminator creates a timing edge that is ``time stamped'' by a time-to-digital converter (TDC) implemented inside the FPGA . This digital information from each channel is sent to an FPGA that services 16 analog channels, and then information from multiple channels is processed by this FPGA to perform logic for crystal lookup, DOI calculation, calibration, etc.

A front-end readout Detector Board for the OpenPET electronics system

DOE PAGES

Choong, W. -S.; Abu-Nimeh, F.; Moses, W. W.; ...

2015-08-12

Here, we present a 16-channel front-end readout board for the OpenPET electronics system. A major task in developing a nuclear medical imaging system, such as a positron emission computed tomograph (PET) or a single-photon emission computed tomograph (SPECT), is the electronics system. While there are a wide variety of detector and camera design concepts, the relatively simple nature of the acquired data allows for a common set of electronics requirements that can be met by a flexible, scalable, and high-performance OpenPET electronics system. The analog signals from the different types of detectors used in medical imaging share similar characteristics, whichmore » allows for a common analog signal processing. The OpenPET electronics processes the analog signals with Detector Boards. Here we report on the development of a 16-channel Detector Board. Each signal is digitized by a continuously sampled analog-to-digital converter (ADC), which is processed by a field programmable gate array (FPGA) to extract pulse height information. A leading edge discriminator creates a timing edge that is "time stamped" by a time-to-digital converter (TDC) implemented inside the FPGA. In conclusion, this digital information from each channel is sent to an FPGA that services 16 analog channels, and then information from multiple channels is processed by this FPGA to perform logic for crystal lookup, DOI calculation, calibration, etc.« less

Vortex Generators to Control Boundary Layer Interactions

NASA Technical Reports Server (NTRS)

Babinsky, Holger (Inventor); Loth, Eric (Inventor); Lee, Sang (Inventor)

2014-01-01

Devices for generating streamwise vorticity in a boundary includes various forms of vortex generators. One form of a split-ramp vortex generator includes a first ramp element and a second ramp element with front ends and back ends, ramp surfaces extending between the front ends and the back ends, and vertical surfaces extending between the front ends and the back ends adjacent the ramp surfaces. A flow channel is between the first ramp element and the second ramp element. The back ends of the ramp elements have a height greater than a height of the front ends, and the front ends of the ramp elements have a width greater than a width of the back ends.

Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

NASA Astrophysics Data System (ADS)

Weber, Walter M.; Mikolajick, Thomas

2017-06-01

Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

DE GERONIMO,G.; FRIED, J.; FROST, E.

We describe a front-end application specific integrated circuit (ASIC) developed for a silicon Compton telescope. Composed of 32 channels, it reads out signals in both polarities from each side of a Silicon strip sensor, 2 mm thick 27 cm long, characterized by a strip capacitance of 30 pF. Each front-end channel provides low-noise charge amplification, shaping with a stabilized baseline, discrimination, and peak detection with an analog memory. The channels can process events simultaneously, and the read out is sparsified. The charge amplifier makes uses a dual-cascode configuration and dual-polarity adaptive reset, The low-hysteresis discriminator and the multi-phase peak detectormore » process signals with a dynamic range in excess of four hundred. An equivalent noise charge (ENC) below 200 electrons was measured at 30 pF, with a slope of about 4.5 electrons/pF at a peaking time of 4 {micro}s. With a total dissipated power of 5 mW the channel covers an energy range up to 3.2 MeV.« less

Noise propagation issues in Belle II pixel detector power cable

DOE PAGES

Iglesias, M.; Arteche, F.; Echeverria, I.; ...

2018-04-26

The vertex detector used in the upgrade of High-Energy physics experiment Belle II includes DEPFET pixel detector (PXD) technology. In this complex topology the power supply units and the front-end electronics are connected through a PXD power cable bundle which may propagate the output noise from the power supplies to the vertex area. This article presents a study of the propagation of noise caused by power converters in the PXD cable bundle based on Multi-conductor Transmission Line (MTL) theory. The work exposes the effect of the complex cable topology and shield connections on the noise propagation, which has an impactmore » on the requirements of the power supplies. This analysis is part of the electromagnetic compatibility based design focused on functional safety to define the shield connections and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.« less

Noise propagation issues in Belle II pixel detector power cable

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iglesias, M.; Arteche, F.; Echeverria, I.

The vertex detector used in the upgrade of High-Energy physics experiment Belle II includes DEPFET pixel detector (PXD) technology. In this complex topology the power supply units and the front-end electronics are connected through a PXD power cable bundle which may propagate the output noise from the power supplies to the vertex area. This article presents a study of the propagation of noise caused by power converters in the PXD cable bundle based on Multi-conductor Transmission Line (MTL) theory. The work exposes the effect of the complex cable topology and shield connections on the noise propagation, which has an impactmore » on the requirements of the power supplies. This analysis is part of the electromagnetic compatibility based design focused on functional safety to define the shield connections and power supply specifications required to ensure the successful integration of the detector and, specifically, to achieve the designed performance of the front-end electronics.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.

Experiments at storage ring light sources as well as at next-generation light sources increasingly require detectors capable of high dynamic range operation, combining low-noise detection of single photons with large pixel well depth. XFEL sources in particular provide pulse intensities sufficiently high that a purely photon-counting approach is impractical. The High Dynamic Range Pixel Array Detector (HDR-PAD) project aims to provide a dynamic range extending from single-photon sensitivity to 10{sup 6} photons/pixel in a single XFEL pulse while maintaining the ability to tolerate a sustained flux of 10{sup 11} ph/s/pixel at a storage ring source. Achieving these goals involves themore » development of fast pixel front-end electronics as well as, in the XFEL case, leveraging the delayed charge collection due to plasma effects in the sensor. A first prototype of essential electronic components of the HDR-PAD readout ASIC, exploring different options for the pixel front-end, has been fabricated. Here, the HDR-PAD concept and preliminary design will be described.« less

Front-end electronics for the Muon Portal project

NASA Astrophysics Data System (ADS)

Garozzo, S.; Marano, D.; Bonanno, G.; Grillo, A.; Romeo, G.; Timpanaro, M. C.; Lo Presti, D.; Riggi, F.; Russo, V.; Bonanno, D.; La Rocca, P.; Longhitano, F.; Bongiovanni, D. G.; Fallica, G.; Valvo, G.

2016-10-01

The Muon Portal Project was born as a joint initiative between Italian research and industrial partners, aimed at the construction of a real-size working detector prototype to inspect the content of traveling containers by means of secondary cosmic-ray muon radiation and recognize potentially dangerous hidden materials. The tomographic image is obtained by reconstructing the incoming and outgoing muon trajectories when crossing the inspected volume, employing two tracker planes located above and below the container under inspection. In this paper, the design and development of the front-end electronics of the Muon Portal detector is presented, with particular emphasis being devoted to the photo-sensor devices detecting the scintillation light and to the read-out circuitry which is in charge of processing and digitizing the analog pulse signals. In addition, the remote control system, mechanical housing, and thermal cooling system of all structural blocks of the Muon Portal tracker are also discussed, demonstrating the effectiveness and functionality of the adopted design.

Development of 3He LPSDs and read-out system for the SANS spectrometer at CPHS

NASA Astrophysics Data System (ADS)

Huang, T. C.; Gong, H.; Shao, B. B.; Wang, X. W.; Zhang, Y.; Pang, B. B.

2014-01-01

The Compact Pulsed Hadron Source (CPHS) is a 13-MeV proton-linac-driven neutron source under construction in Tsinghua University. Time-of-flight (TOF) small-angle neutron scattering (SANS) spectrometer is one of the first instruments to be built. It is designed to use linear position-sensitive detectors (LPSDs) of 3He gas proportional counters to cover a 1 m×1 m area. Prototypical LPSDs (Φ = 12 mm, L=1 m) have been made and read-out system is developed based on charge division. This work describes the in-house fabrication of the prototypical LPSDs and design of the read-out system including front-end electronics and data acquisition (DAQ) system. Key factors of the front-end electronics are studied and optimized with PSPICE simulation. DAQ system is designed based on VME bus architecture and FPGA Mezzanine Card (FMC) standard with high flexibility and extendibility. Preliminary experiments are carried out and the results are present and discussed.

Users Guide on Scaled CMOS Reliability: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

NASA Technical Reports Server (NTRS)

White, Mark; Cooper, Mark; Johnston, Allan

2011-01-01

Reliability of advanced CMOS technology is a complex problem that is usually addressed from the standpoint of specific failure mechanisms rather than overall reliability of a finished microcircuit. A detailed treatment of CMOS reliability in scaled devices can be found in Ref. 1; it should be consulted for a more thorough discussion. The present document provides a more concise treatment of the scaled CMOS reliability problem, emphasizing differences in the recommended approach for these advanced devices compared to that of less aggressively scaled devices. It includes specific recommendations that can be used by flight projects that use advanced CMOS. The primary emphasis is on conventional memories, microprocessors, and related devices.

MEMS-Electronic-Photonic Heterogeneous Integrated FMCW Ladar Source

DTIC Science & Technology

2015-12-18

CMOS  ICs  in  a  seamless  manner,  and...the   heterogeneous   integration   is   to   leverage   on   the   available   foundry   capabilities   ( CMOS   and...dies”   or   “known  good  wafers”).  We  have  adopted  a  three-­‐dimensional  (3D)  integration  strategy:  The   CMOS

A digital front-end and readout microsystem for calorimetry at LHC

NASA Astrophysics Data System (ADS)

Alippi, C.; Appelquist, G.; Berglund, S.; Bohm, C.; Breveglieri, L.; Brigati, S.; Carlson, P.; Cattaneo, P.; Dadda, L.; David, J.; Del Buono, L.; Dell'Acqua, A.; Engström, M.; Fumagalli, G.; Gatti, U.; Genat, J. F.; Goggi, G.; Hansen, M.; Hentzell, H.; Höglund, I.; Inkinen, S.; Kerek, A.; Lebbolo, H.; LeDortz, O.; Lofstedt, B.; Maloberti, F.; Nayman, P.; Persson, S.-T.; Piuri, V.; Salice, F.; Sami, M.; Savoy-Navarro, A.; Stefanelli, R.; Sundblad, R.; Svensson, C.; Torelli, G.; Vanuxem, J. P.; Yamdagni, N.; Yuan, J.; Zitoun, R.

1994-04-01

A digital solution to the front-end electronics for calorimetric detectors at future supercolliders is presented. The solution is based on high speed {A}/{D} converters, a fully programmable pipeline/digital filter chain and local intelligence. Questions of error correction, fault-tolerance and system redundancy are also being considered. A system integration of a multichannel device in a multichip, Silicon-on-Silicon Microsystem hybrid, is used. This solution allows a new level of integration of complex analogue and digital functions, with an excellent flexibility in mixing technologies for the different functional blocks. It also allows a high degree of programmability at both the function and the system level, and offers the possibility of customising the microsystem with detector-specific functions.

Combined PET/MRI scanner

DOEpatents

Schlyer, David; Woody, Craig L.; Rooney, William; Vaska, Paul; Stoll, Sean; Pratte, Jean-Francois; O'Connor, Paul

2007-10-23

A combined PET/MRI scanner generally includes a magnet for producing a magnetic field suitable for magnetic resonance imaging, a radiofrequency (RF) coil disposed within the magnetic field produced by the magnet and a ring tomograph disposed within the magnetic field produced by the magnet. The ring tomograph includes a scintillator layer for outputting at least one photon in response to an annihilation event, a detection array coupled to the scintillator layer for detecting the at least one photon outputted by the scintillator layer and for outputting a detection signal in response to the detected photon and a front-end electronic array coupled to the detection array for receiving the detection signal, wherein the front-end array has a preamplifier and a shaper network for conditioning the detection signal.

Ionization Readout Electronics for SuperCDMS SNOLAB Employing a HEMT Front-End

NASA Astrophysics Data System (ADS)

Partridge, R.

2014-09-01

The SuperCDMS SNOLAB experiment seeks to deploy 200 kg of cryogenic Ge detectors employing phonon and ionization readout to identify dark matter interactions. One of the design challenges for the experiment is to provide amplification of the high impedance ionization signal while minimizing power dissipation and noise. This paper describes the design and expected performance of the ionization readout being developed for an engineering model of the SuperCDMS SNOLAB Ge Tower System. The readout features the use of a low-noise HEMT front end transistor operating at 4 K to achieve a power dissipation of 100 W per channel, local grounding to minimize noise injection, and biasing circuitry that allows precise control of the HEMT operating point.

75 FR 70703 - Humana Insurance Company a Division of Carenetwork, Inc. Front End Operations and Account...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-11-18

... Division of CareNetwork, Inc., Front End Operations and Account Installation-Product Testing Groups, De... a Division of Carenetwork, Inc. Front End Operations and Account Installation-Product Testing Groups..., a Division of CareNetwork, Inc., Front End Operations and Account Installation- Product Testing...

Characterization of the Photon Counting CHASE Jr., Chip Built in a 40-nm CMOS Process With a Charge Sharing Correction Algorithm Using a Collimated X-Ray Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krzyżanowska, A.; Deptuch, G. W.; Maj, P.

This paper presents the detailed characterization of a single photon counting chip, named CHASE Jr., built in a CMOS 40-nm process, operating with synchrotron radiation. The chip utilizes an on-chip implementation of the C8P1 algorithm. The algorithm eliminates the charge sharing related uncertainties, namely, the dependence of the number of registered photons on the discriminator’s threshold, set for monochromatic irradiation, and errors in the assignment of an event to a certain pixel. The article presents a short description of the algorithm as well as the architecture of the CHASE Jr., chip. The analog and digital functionalities, allowing for proper operationmore » of the C8P1 algorithm are described, namely, an offset correction for two discriminators independently, two-stage gain correction, and different operation modes of the digital blocks. The results of tests of the C8P1 operation are presented for the chip bump bonded to a silicon sensor and exposed to the 3.5- μm -wide pencil beam of 8-keV photons of synchrotron radiation. It was studied how sensitive the algorithm performance is to the chip settings, as well as the uniformity of parameters of the analog front-end blocks. Presented results prove that the C8P1 algorithm enables counting all photons hitting the detector in between readout channels and retrieving the actual photon energy.« less

Dielectrophoretic lab-on-CMOS platform for trapping and manipulation of cells.

PubMed

Park, Kyoungchul; Kabiri, Shideh; Sonkusale, Sameer

2016-02-01

Trapping and manipulation of cells are essential operations in numerous studies in biology and life sciences. We discuss the realization of a Lab-on-a-Chip platform for dielectrophoretic trapping and repositioning of cells and microorganisms on a complementary metal oxide semiconductor (CMOS) technology, which we define here as Lab-on-CMOS (LoC). The LoC platform is based on dielectrophoresis (DEP) which is the force experienced by any dielectric particle including biological entities in non-uniform AC electrical field. DEP force depends on the permittivity of the cells, its size and shape and also on the permittivity of the medium and therefore it enables selective targeting of cells based on their phenotype. In this paper, we address an important matter that of electrode design for DEP for which we propose a three-dimensional (3D) octapole geometry to create highly confined electric fields for trapping and manipulation of cells. Conventional DEP-based platforms are implemented stand-alone on glass, silicon or polymers connected to external infrastructure for electronics and optics, making it bulky and expensive. In this paper, the use of CMOS as a platform provides a pathway to truly miniaturized lab-on-CMOS or LoC platform, where DEP electrodes are designed using built-in multiple metal layers of the CMOS process for effective trapping of cells, with built-in electronics for in-situ impedance monitoring of the cell position. We present electromagnetic simulation results of DEP force for this unique 3D octapole geometry on CMOS. Experimental results with yeast cells validate the design. These preliminary results indicate the promise of using CMOS technology for truly compact miniaturized lab-on-chip platform for cell biotechnology applications.

CMOS serial link for fully duplexed data communication

NASA Astrophysics Data System (ADS)

Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

1995-04-01

This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

Analysis of Preoperative Airway Examination with the CMOS Video Rhino-laryngoscope.

PubMed

Tsukamoto, Masanori; Hitosugi, Takashi; Yokoyama, Takeshi

2017-05-01

Endoscopy is one of the most useful clinical techniques in difficult airway management Comparing with the fibroptic endoscope, this compact device is easy to operate and can provide the clear image. In this study, we investigated its usefulness in the preoperative examination of endoscopy. Patients undergoing oral maxillofacial surgery were enrolled in this study. We performed preoperative airway examination by electronic endoscope (The CMOS video rhino-laryngoscope, KARL STORZ Endoscopy Japan, Tokyo). The system is composed of a videoendoscope, a compact video processor and a video recorder. In addition, the endoscope has a small color charge coupled device (CMOS) chip built into the tip of the endoscope. The outer diameter of the tip of this scope is 3.7 mm. In this study, electronic endoscope was used for preoperative airway examination in 7 patients. The preoperative airway examination with electronic endoscope was performed successfully in all the patients except one patient The patient had the symptoms such as nausea and vomiting at the examination. We could perform preoperative airway examination with excellent visualization and convenient recording of video sequence images with the CMOS video rhino-laryngoscope. It might be a especially useful device for the patients of difficult airways.

Low-temperature crack-free Si3N4 nonlinear photonic circuits for CMOS-compatible optoelectronic co-integration

NASA Astrophysics Data System (ADS)

Casale, Marco; Kerdiles, Sebastien; Brianceau, Pierre; Hugues, Vincent; El Dirani, Houssein; Sciancalepore, Corrado

2017-02-01

In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing ( 1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs).

Germanium CMOS potential from material and process perspectives: Be more positive about germanium

NASA Astrophysics Data System (ADS)

Toriumi, Akira; Nishimura, Tomonori

2018-01-01

CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is expected. This size scaling will end sooner or later, however, because the typical size is approaching the atomic distance level in crystalline Si. In addition, it is said that electron transport in FETs is ballistic or nearly ballistic, which means that the injection velocity at the virtual source is a physical parameter relevant for estimating the driving current. Channel-materials with higher carrier mobility than Si are nonetheless needed, and the carrier mobility in the channels is a parameter important with regard to increasing the injection velocity. Although the density of states in the channel has not been discussed often, it too is relevant for estimating the channel current. Both the mobility and the density of states are in principle related to the effective mass of the carrier. From this device physics viewpoint, we expect germanium (Ge) CMOS to be promising for scaling beyond the Si CMOS limit because the bulk mobility values of electrons and holes in Ge are much higher than those of electrons and holes in Si, and the electron effective mass in Ge is not much less than that in III-V compounds. There is a debate that Ge should be used for p-MOSFETs and III-V compounds for n-MOSFETs, but considering that the variability or nonuniformity of the FET performance in today’s CMOS LSIs is a big challenge, it seems that much more attention should be paid to the simplicity of the material design and of the processing steps. Nevertheless, Ge faces a number of challenges even in case that only the FET level is concerned. One of the big problems with Ge CMOS technology has been its poor performance in n-MOSFETs. While the hole mobility in p-FETs has been improved, the electron mobility in the inversion layer of Ge FETs remains a serious concern. If this is due to the inherent properties of Ge, only p-MOSFETs might be used for device applications. To make Ge CMOS devices practically viable, we need to understand why electron mobility is severely degraded in the inversion layer in Ge n-channel MOSFETs and to find out how it can be increased. In the Si CMOS technology, the SiO2/Si interface has long been investigated and cannot be ignored even after the introduction of high-k gate stack technology. In that sense, the GeO2/Ge interface should be intensively studied to make the best of Ge’s advantages. Therefore we first discuss the GeO2/Ge interface with regard to its physical and electrical characteristics. When we regard Ge as a channel material beyond Si for high performance ULSIs, we also have to seriously consider the gate stack scalability and reliability. The source/drain engineering, as well as the gate stack formation, is another challenge in Ge MOSFET design. Both the higher metal/Ge contact resistance and the larger p/n junction leakage current may be the consequences of Ge’s intrinsic properties because they are derived from the strong Fermi-level pinning and the narrow energy band gap, respectively. Even if the carrier transport in the channel may be ideally ballistic, these properties should degrade FET properties. The narrower energy band gap of Ge is often addressed, but the higher dielectric constant of Ge is rarely discussed. This is also the case for most of the other high-mobility materials. The dielectric constant is directly and negatively related to short-channel effects, and we have not been able to provide a substantial solution to overcome this hardship. We have to keep this in mind for the short-channel FET operation. Although a number of problems remain to be solved, in this paper, we view the current status of Ge FET technology positively. A number of (but not all) Ge-related challenges have been overcome in the past 10 years, which seems to be a good time to summarize the status of Ge technology, particularly materials engineering aspects rather than device integration issues. Since we cannot cover all of the results published to date, we mainly discuss fundamental aspects based on our experimental results. Remaining challenges are also addressed but not comprehensively. Integration issues are not discussed in this review. Finally, new types of electron devices utilizing Ge’s advantages are briefly introduced on the basis of our experimental results.

Recent Advances in Fluorescence Lifetime Analytical Microsystems: Contact Optics and CMOS Time-Resolved Electronics.

PubMed

Wei, Liping; Yan, Wenrong; Ho, Derek

2017-12-04

Fluorescence spectroscopy has become a prominent research tool with wide applications in medical diagnostics and bio-imaging. However, the realization of combined high-performance, portable, and low-cost spectroscopic sensors still remains a challenge, which has limited the technique to the laboratories. A fluorescence lifetime measurement seeks to obtain the characteristic lifetime from the fluorescence decay profile. Time-correlated single photon counting (TCSPC) and time-gated techniques are two key variations of time-resolved measurements. However, commercial time-resolved analysis systems typically contain complex optics and discrete electronic components, which lead to bulkiness and a high cost. These two limitations can be significantly mitigated using contact sensing and complementary metal-oxide-semiconductor (CMOS) implementation. Contact sensing simplifies the optics, whereas CMOS technology enables on-chip, arrayed detection and signal processing, significantly reducing size and power consumption. This paper examines recent advances in contact sensing and CMOS time-resolved circuits for the realization of fully integrated fluorescence lifetime measurement microsystems. The high level of performance from recently reported prototypes suggests that the CMOS-based contact sensing microsystems are emerging as sound technologies for application-specific, low-cost, and portable time-resolved diagnostic devices.

Recent Advances in Fluorescence Lifetime Analytical Microsystems: Contact Optics and CMOS Time-Resolved Electronics

PubMed Central

Yan, Wenrong; Ho, Derek

2017-01-01

Fluorescence spectroscopy has become a prominent research tool with wide applications in medical diagnostics and bio-imaging. However, the realization of combined high-performance, portable, and low-cost spectroscopic sensors still remains a challenge, which has limited the technique to the laboratories. A fluorescence lifetime measurement seeks to obtain the characteristic lifetime from the fluorescence decay profile. Time-correlated single photon counting (TCSPC) and time-gated techniques are two key variations of time-resolved measurements. However, commercial time-resolved analysis systems typically contain complex optics and discrete electronic components, which lead to bulkiness and a high cost. These two limitations can be significantly mitigated using contact sensing and complementary metal-oxide-semiconductor (CMOS) implementation. Contact sensing simplifies the optics, whereas CMOS technology enables on-chip, arrayed detection and signal processing, significantly reducing size and power consumption. This paper examines recent advances in contact sensing and CMOS time-resolved circuits for the realization of fully integrated fluorescence lifetime measurement microsystems. The high level of performance from recently reported prototypes suggests that the CMOS-based contact sensing microsystems are emerging as sound technologies for application-specific, low-cost, and portable time-resolved diagnostic devices. PMID:29207568

A wideband CMOS single-ended low noise amplifier employing negative resistance technique

NASA Astrophysics Data System (ADS)

Guo, Benqing; Chen, Hongpeng; Wang, Xuebing; Chen, Jun; Li, Yueyue; Jin, Haiyan; Yang, Yongjun

2018-02-01

A wideband common-gate CMOS low noise amplifier with negative resistance technique is proposed. A novel single-ended negative resistance structure is employed to improve gain and noise of the LNA. The inductor resonating is adopted at the input stage and load stage to meet wideband matching and compensate gain roll-off at higher frequencies. Implemented in a 0.18 μm CMOS technology, the proposed LNA demonstrates in simulations a maximal gain of 16.4 dB across the 3 dB bandwidth of 0.2-3 GHz. The in-band noise figure of 3.4-4.7 dB is obtained while the IIP3 of 5.3-6.8 dBm and IIP2 of 12.5-17.2 dBm are post-simulated in the designed frequency band. The LNA core consumes a power dissipation of 3.8 mW under a 1.5 V power supply.

40 CFR 63.487 - Batch front-end process vents-reference control technology.

Code of Federal Regulations, 2010 CFR

2010-07-01

... § 63.487 Batch front-end process vents—reference control technology. (a) Batch front-end process vents... 40 Protection of Environment 9 2010-07-01 2010-07-01 false Batch front-end process vents-reference control technology. 63.487 Section 63.487 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY...

Improved Space Object Observation Techniques Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

2013-08-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

A configurable electronics system for the ESS-Bilbao beam position monitors

NASA Astrophysics Data System (ADS)

Muguira, L.; Belver, D.; Etxebarria, V.; Varnasseri, S.; Arredondo, I.; del Campo, M.; Echevarria, P.; Garmendia, N.; Feuchtwanger, J.; Jugo, J.; Portilla, J.

2013-09-01

A versatile and configurable system has been developed in order to monitorize the beam position and to meet all the requirements of the future ESS-Bilbao Linac. At the same time the design has been conceived to be open and configurable so that it could eventually be used in different kinds of accelerators, independent of the charged particle, with minimal change. The design of the Beam Position Monitors (BPMs) system includes a test bench both for button-type pick-ups (PU) and striplines (SL), the electronic units and the control system. The electronic units consist of two main parts. The first part is an Analog Front-End (AFE) unit where the RF signals are filtered, conditioned and converted to base-band. The second part is a Digital Front-End (DFE) unit which is based on an FPGA board where the base-band signals are sampled in order to calculate the beam position, the amplitude and the phase. To manage the system a Multipurpose Controller (MC) developed at ESSB has been used. It includes the FPGA management, the EPICS integration and Archiver Instances. A description of the system and a comparison between the performance of both PU and SL BPM designs measured with this electronics system are fully described and discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lombigit, L., E-mail: lojius@nm.gov.my; Rahman, Nur Aira Abd; Mohamad, Glam Hadzir Patai

A radioisotope identifier device based on large volume Co-planar grid CZT detector is current under development at Malaysian Nuclear Agency. This device is planned to be used for in-situ identification of radioisotopes based on their unique energies. This work reports on electronics testing performed on the front-end electronics (FEE) analog section comprising charge sensitive preamplifier-pulse shaping amplifier chain. This test involves measurement of charge sensitivity, pulse parameters and electronics noise. This report also present some preliminary results on the spectral measurement obtained from gamma emitting radioisotopes.

Electronic hardware design of electrical capacitance tomography systems.

PubMed

Saied, I; Meribout, M

2016-06-28

Electrical tomography techniques for process imaging are very prominent for industrial applications, such as the oil and gas industry and chemical refineries, owing to their ability to provide the flow regime of a flowing fluid within a relatively high throughput. Among the various techniques, electrical capacitance tomography (ECT) is gaining popularity due to its non-invasive nature and its capability to differentiate between different phases based on their permittivity distribution. In recent years, several hardware designs have been provided for ECT systems that have improved its resolution of measurements to be around attofarads (aF, 10(-18) F), or the number of channels, that is required to be large for some applications that require a significant amount of data. In terms of image acquisition time, some recent systems could achieve a throughput of a few hundred frames per second, while data processing time could be achieved in only a few milliseconds per frame. This paper outlines the concept and main features of the most recent front-end and back-end electronic circuits dedicated for ECT systems. In this paper, multiple-excitation capacitance polling, a front-end electronic technique, shows promising results for ECT systems to acquire fast data acquisition speeds. A highly parallel field-programmable gate array (FPGA) based architecture for a fast reconstruction algorithm is also described. This article is part of the themed issue 'Supersensing through industrial process tomography'. © 2016 The Author(s).

Co-integrating plasmonics with Si3N4 photonics towards a generic CMOS compatible PIC platform for high-sensitivity multi-channel biosensors: the H2020 PlasmoFab approach (Conference Presentation)

NASA Astrophysics Data System (ADS)

Tsiokos, Dimitris M.; Dabos, George; Ketzaki, Dimitra; Weeber, Jean-Claude; Markey, Laurent; Dereux, Alain; Giesecke, Anna Lena; Porschatis, Caroline; Chmielak, Bartos; Wahlbrink, Thorsten; Rochracher, Karl; Pleros, Nikos

2017-05-01

Silicon photonics meet most fabrication requirements of standard CMOS process lines encompassing the photonics-electronics consolidation vision. Despite this remarkable progress, further miniaturization of PICs for common integration with electronics and for increasing PIC functional density is bounded by the inherent diffraction limit of light imposed by optical waveguides. Instead, Surface Plasmon Polariton (SPP) waveguides can guide light at sub-wavelength scales at the metal surface providing unique light-matter interaction properties, exploiting at the same time their metallic nature to naturally integrate with electronics in high-performance ASPICs. In this article, we demonstrate the main goals of the recently introduced H2020 project PlasmoFab towards addressing the ever increasing needs for low energy, small size and high performance mass manufactured PICs by developing a revolutionary yet CMOS-compatible fabrication platform for seamless co-integration of plasmonics with photonic and supporting electronic. We demonstrate recent advances on the hosting SiN photonic hosting platform reporting on low-loss passive SiN waveguide and Grating Coupler circuits for both the TM and TE polarization states. We also present experimental results of plasmonic gold thin-film and hybrid slot waveguide configurations that can allow for high-sensitivity sensing, providing also the ongoing activities towards replacing gold with Cu, Al or TiN metal in order to yield the same functionality over a CMOS metallic structure. Finally, the first experimental results on the co-integrated SiN+plasmonic platform are demonstrated, concluding to an initial theoretical performance analysis of the CMOS plasmo-photonic biosensor that has the potential to allow for sensitivities beyond 150000nm/RIU.

Tests of commercial colour CMOS cameras for astronomical applications

NASA Astrophysics Data System (ADS)

Pokhvala, S. M.; Reshetnyk, V. M.; Zhilyaev, B. E.

2013-12-01

We present some results of testing commercial colour CMOS cameras for astronomical applications. Colour CMOS sensors allow to perform photometry in three filters simultaneously that gives a great advantage compared with monochrome CCD detectors. The Bayer BGR colour system realized in colour CMOS sensors is close to the astronomical Johnson BVR system. The basic camera characteristics: read noise (e^{-}/pix), thermal noise (e^{-}/pix/sec) and electronic gain (e^{-}/ADU) for the commercial digital camera Canon 5D MarkIII are presented. We give the same characteristics for the scientific high performance cooled CCD camera system ALTA E47. Comparing results for tests of Canon 5D MarkIII and CCD ALTA E47 show that present-day commercial colour CMOS cameras can seriously compete with the scientific CCD cameras in deep astronomical imaging.

FPGA-Based Front-End Electronics for Positron Emission Tomography

PubMed Central

Haselman, Michael; DeWitt, Don; McDougald, Wendy; Lewellen, Thomas K.; Miyaoka, Robert; Hauck, Scott

2010-01-01

Modern Field Programmable Gate Arrays (FPGAs) are capable of performing complex discrete signal processing algorithms with clock rates above 100MHz. This combined with FPGA’s low expense, ease of use, and selected dedicated hardware make them an ideal technology for a data acquisition system for positron emission tomography (PET) scanners. Our laboratory is producing a high-resolution, small-animal PET scanner that utilizes FPGAs as the core of the front-end electronics. For this next generation scanner, functions that are typically performed in dedicated circuits, or offline, are being migrated to the FPGA. This will not only simplify the electronics, but the features of modern FPGAs can be utilizes to add significant signal processing power to produce higher resolution images. In this paper two such processes, sub-clock rate pulse timing and event localization, will be discussed in detail. We show that timing performed in the FPGA can achieve a resolution that is suitable for small-animal scanners, and will outperform the analog version given a low enough sampling period for the ADC. We will also show that the position of events in the scanner can be determined in real time using a statistical positioning based algorithm. PMID:21961085

NECTAr: New electronics for the Cherenkov Telescope Array

NASA Astrophysics Data System (ADS)

Vorobiov, S.; Bolmont, J.; Corona, P.; Delagnes, E.; Feinstein, F.; Gascón, D.; Glicenstein, J.-F.; Naumann, C. L.; Nayman, P.; Sanuy, A.; Toussenel, F.; Vincent, P.

2011-05-01

The European astroparticle physics community aims to design and build the next generation array of Imaging Atmospheric Cherenkov Telescopes (IACTs), that will benefit from the experience of the existing H.E.S.S. and MAGIC detectors, and further expand the very-high energy astronomy domain. In order to gain an order of magnitude in sensitivity in the 10 GeV to >100TeV range, the Cherenkov Telescope Array (CTA) will employ 50-100 mirrors of various sizes equipped with 1000-4000 channels per camera, to be compared with the 6000 channels of the final H.E.S.S. array. A 3-year program, started in 2009, aims to build and test a demonstrator module of a generic CTA camera. We present here the NECTAr design of front-end electronics for the CTA, adapted to the trigger and data acquisition of a large IACTs array, with simple production and maintenance. Cost and camera performances are optimized by maximizing integration of the front-end electronics (amplifiers, fast analog samplers, ADCs) in an ASIC, achieving several GS/s and a few μs readout dead-time. We present preliminary results and extrapolated performances from Monte Carlo simulations.

Position sensitive and energy dispersive x-ray detector based on silicon strip detector technology

NASA Astrophysics Data System (ADS)

Wiącek, P.; Dąbrowski, W.; Fink, J.; Fiutowski, T.; Krane, H.-G.; Loyer, F.; Schwamberger, A.; Świentek, K.; Venanzi, C.

2015-04-01

A new position sensitive detector with a global energy resolution for the entire detector of about 380 eV FWHM for 8.04 keV line at ambient temperature is presented. The measured global energy resolution is defined by the energy spectra summed over all strips of the detector, and thus it includes electronic noise of the front-end electronics, charge sharing effects, matching of parameters across the channels and other system noise sources. The target energy resolution has been achieved by segmentation of the strips to reduce their capacitance and by careful optimization of the front-end electronics. The key design aspects and parameters of the detector are discussed briefly in the paper. Excellent noise and matching performance of the readout ASIC and negligible system noise allow us to operate the detector with a discrimination threshold as low as 1 keV and to measure fluorescence radiation lines of light elements, down to Al Kα of 1.49 keV, simultaneously with measurements of the diffraction patterns. The measurement results that demonstrate the spectrometric and count rate performance of the developed detector are presented and discussed in the paper.

Performance of the Low-Jitter High-Gain/Bandwidth Front-End Electronics of the HADES tRPC Wall

NASA Astrophysics Data System (ADS)

Belver, Daniel; Cabanelas, P.; Castro, E.; Garzon, J. A.; Gil, A.; Gonzalez-Diaz, D.; Koenig, W.; Traxler, M.

2010-10-01

A front-end electronics (FEE) chain for accurate time measurements has been developed for the new Resistive Plate Chamber (RPC)-based Time-of-Flight (TOF) wall of the High Acceptance Di-Electron Spectrometer (HADES). The wall covers an area of around 8 m2, divided in 6 sectors. In total, 1122 4-gap timing RPC cells are read-out by 2244 time and charge sensitive channels. The FEE chain consists of 2 custom-made boards: a 4-channel DaughterBOard (DBO) and a 32-channel MotherBOard (MBO). The DBO uses a fast 2 GHz amplifier feeding a dual high-speed discriminator. The time and charge information are encoded, respectively, in the leading edge and the width of an LVDS signal. Each MBO houses up to 8 DBOs providing them regulated voltage supply, threshold values via DACs, test signals and, additionally, routing out a signal proportional to the channel multiplicity needed for a 1st level trigger decision. The MBO delivers LVDS signals to a multi-purpose Trigger Readout Board (TRB) for data acquisition. The FEE allows achieving a system resolution around 75 ps fulfilling comfortably the requirements of the HADES upgrade .

Construction and first beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

NASA Astrophysics Data System (ADS)

Jain, S.

2017-03-01

The High Granularity Calorimeter (HGCAL) is the technology choice of the CMS collaboration for the endcap calorimetry upgrade planned to cope with the harsh radiation and pileup environment at the High Luminosity-LHC . The HGCAL is realized as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5-01. cm2 interspersed with absorbers made from tungsten and copper to form a highly compact and granular device. Prototype modules, based on hexagonal silicon pad sensors, with 128 channels, have been constructed and tested in beams at FNAL and at CERN. The modules include many of the features required for this challenging detector, including a PCB glued directly to the sensor, using through-hole wire-bonding for signal readout and 5 mm spacing between layers—including the front-end electronics and all services. Tests in 2016 have used an existing front-end chip —Skiroc2 (designed for the CALICE experiment for ILC). We present results from first tests of these modules both in the laboratory and with beams of electrons, pions and protons, including noise performance, calibration with mips and electron signals.

Embedded electronics for a 64-channel wireless brain implant

NASA Astrophysics Data System (ADS)

Burgert, Johann D.; Malasek, Jan; Martel, Sylvain M.; Wiseman, Colette; Fofonoff, Timothy; Dyer, Robert; Hunter, Ian W.; Hatsopoulos, Nicholas; Donoghue, John

2001-10-01

The Telemetric Electrode Array System (TEAS) is a surgically implantable device for the study of neural activity in the brain. An 8x8 array of electrodes collects intra-cortical neural signals and connects them to an analog front end. The front end amplifies and digitizes these microvolt-level signals with 12 bits of resolution and at 31KHz per channel. Peak detection is used to extract the information carrying features of these signals, which are transmitted over a Bluetooth-based radio link at 725 Kbit/sec. The electrode array is made up of 1mm tall, 60-micron square electrodes spaced 500 microns tip-to-tip. A flex circuit connector provides mechanical isolation between the brain and the electronics, which are mounted to the cranium. Power consumption and management is a critical aspect of the design. The entire system must operate off a surgically implantable battery. With this power source, the system must provide the functionality of a wireless, 64-channel oscilloscope for several hours. The system also provides a low-power sleep mode during which the battery can be inductively charged. Power dissipation and biocompatibility issues also affect the design of the electronics for the probe. The electronics system must fit between the skull and the skin of the test subject. Thus, circuit miniaturization and microassembly techniques are essential to construct the probe's electronics.

UHF front-end feeding RFID-based body sensor networks by exploiting the reader signal

NASA Astrophysics Data System (ADS)

Pasca, M.; Colella, R.; Catarinucci, L.; Tarricone, L.; D'Amico, S.; Baschirotto, A.

2016-05-01

This paper presents an integrated, high-sensitivity UHF radio frequency identification (RFID) power management circuit for body sensor network applications. The circuit consists of a two-stage RF-DC Dickson's rectifier followed by an integrated five-stage DC-DC Pelliconi's charge pump driven by an ultralow start-up voltage LC oscillator. The DC-DC charge pump interposed between the RF-DC rectifier and the output load provides the RF to load isolation avoiding losses due to the diodes reverse saturation current. The RF-DC rectifier has been realized on FR4 substrate, while the charge pump and the oscillator have been realized in 180 nm complementary metal oxide semiconductor (CMOS) technology. Outdoor measurements demonstrate the ability of the power management circuit to provide 400 mV output voltage at 14 m distance from the UHF reader, in correspondence of -25 dBm input signal power. As demonstrated in the literature, such output voltage level is suitable to supply body sensor network nodes.

Wireless biopotential acquisition system for portable healthcare monitoring.

PubMed

Wang, W-S; Huang, H-Y; Wu, Z-C; Chen, S-C; Wang, W-F; Wu, C-F; Luo, C-H

2011-07-01

A complete biopotential acquisition system with an analogue front-end (AFE) chip is proposed for portable healthcare monitoring. A graphical user interface (GUI) is also implemented to display the extracted biopotential signals in real-time on a computer for patients or in a hospital via the internet for doctors. The AFE circuit defines the quality of the acquired biosignals. Thus, an AFE chip with low power consumption and a high common-mode rejection ratio (CMRR) was implemented in the TSMC 0.18-μm CMOS process. The measurement results show that the proposed AFE, with a core area of 0.1 mm(2), has a CMRR of 90 dB, and power consumption of 21.6 μW. Biopotential signals of electroencephalogram (EEG), electrocardiogram (ECG) and electromyogram (EMG) were measured to verify the proposed system. The board size of the proposed system is 6 cm × 2.5 cm and the weight is 30 g. The total power consumption of the proposed system is 66 mW. Copyright © 2011 Informa UK, Ltd.

The Panda Strip Asic: Pasta

NASA Astrophysics Data System (ADS)

Lai, A.

2018-01-01

PASTA is the 64 channel front-end chip, designed in a 110 nm CMOS technology to read out the strip sensors of the Micro Vertex Detector (MVD) of the PANDA experiment. This chip provides high resolution timestamp and deposited charge information by means of the time-over-threshold technique. Its working principle is based on a predecessor, the TOFPET ASIC, that was designed for medical applications. A general restructuring of the architecture was needed, in order to meet the specific requirements imposed by the physics programme of PANDA, especially in terms of radiation tolerance, spatial constraints, and readout in absence of a first level hardware trigger. The first revision of PASTA is currently under evaluation at the Forschungszentrum Jülich, where a data acquisition system dedicated to the MVD prototypes has been developed. This paper describes the main aspect of the chip design, gives an overview of the data acquisition system used for the verification, and shows the first results regarding the performance of PASTA.

Design of high-linear CMOS circuit using a constant transconductance method for gamma-ray spectroscopy system

NASA Astrophysics Data System (ADS)

Jung, I. I.; Lee, J. H.; Lee, C. S.; Choi, Y.-W.

2011-02-01

We propose a novel circuit to be applied to the front-end integrated circuits of gamma-ray spectroscopy systems. Our circuit is designed as a type of current conveyor (ICON) employing a constant- gm (transconductance) method which can significantly improve the linearity in the amplified signals by using a large time constant and the time-invariant characteristics of an amplifier. The constant- gm method is obtained by a feedback control which keeps the transconductance of the input transistor constant. To verify the performance of the propose circuit, the time constant variations for the channel resistances are simulated with the TSMC 0.18 μm transistor parameters using HSPICE, and then compared with those of a conventional ICON. As a result, the proposed ICON shows only 0.02% output linearity variation and 0.19% time constant variation for the input amplitude up to 100 mV. These are significantly small values compared to a conventional ICON's 1.39% and 19.43%, respectively, for the same conditions.

Systems Librarian and Automation Review.

ERIC Educational Resources Information Center

Schuyler, Michael

1992-01-01

Discusses software sharing on computer networks and the need for proper bandwidth; and describes the technology behind FidoNet, a computer network made up of electronic bulletin boards. Network features highlighted include front-end mailers, Zone Mail Hour, Nodelist, NetMail, EchoMail, computer conferences, tosser and scanner programs, and host…

End-Users, Front Ends and Librarians.

ERIC Educational Resources Information Center

Bourne, Donna E.

1989-01-01

The increase in end-user searching, the advantages and limitations of front ends, and the role of the librarian in end-user searching are discussed. It is argued that librarians need to recognize that front ends can be of benefit to themselves and patrons, and to assume the role of advisors and educators for end-users. (37 references) (CLB)

A semi-implantable multichannel telemetry system for continuous electrical, mechanical and hemodynamical recordings in animal cardiac research.

PubMed

Kong, Wei; Huang, Jian; Rollins, Dennis L; Ideker, Raymond E; Smith, William M

2007-03-01

We have developed an eight-channel telemetry system for studying experimental models of chronic cardiovascular disease. The system is an extension of a previous device that has been miniaturized, reduced in power consumption and provided with increased functionality. We added sensors for ventricular dimension, and coronary artery blood flow and arterial blood pressure that are suitable for use with the system. The telemetry system consists of a front end, a backpack and a host PC. The front end is a watertight stainless steel case with all sensor electronics sealed inside; it acquires dimension, flow, pressure and five cardiac electrograms from selected locations on the heart. The backpack includes a control unit, Bluetooth radio, and batteries. The control unit digitizes eight channels of data from the front end and forwards them to the host PC via Bluetooth link. The host PC has a receiving Bluetooth radio and Labview programs to store and display data. The whole system was successfully tested on the bench and in an animal model. This telemetry system will greatly enhance the ability to study events leading to spontaneous sudden cardiac arrest.

A Glucose Biosensor Using CMOS Potentiostat and Vertically Aligned Carbon Nanofibers.

PubMed

Al Mamun, Khandaker A; Islam, Syed K; Hensley, Dale K; McFarlane, Nicole

2016-08-01

This paper reports a linear, low power, and compact CMOS based potentiostat for vertically aligned carbon nanofibers (VACNF) based amperometric glucose sensors. The CMOS based potentiostat consists of a single-ended potential control unit, a low noise common gate difference-differential pair transimpedance amplifier and a low power VCO. The potentiostat current measuring unit can detect electrochemical current ranging from 500 nA to 7 [Formula: see text] from the VACNF working electrodes with high degree of linearity. This current corresponds to a range of glucose, which depends on the fiber forest density. The potentiostat consumes 71.7 [Formula: see text] of power from a 1.8 V supply and occupies 0.017 [Formula: see text] of chip area realized in a 0.18 [Formula: see text] standard CMOS process.

A 16-Channel CMOS Chopper-Stabilized Analog Front-End ECoG Acquisition Circuit for a Closed-Loop Epileptic Seizure Control System.

PubMed

Wu, Chung-Yu; Cheng, Cheng-Hsiang; Chen, Zhi-Xin

2018-06-01

In this paper, a 16-channel analog front-end (AFE) electrocorticography signal acquisition circuit for a closed-loop seizure control system is presented. It is composed of 16 input protection circuits, 16 auto-reset chopper-stabilized capacitive-coupled instrumentation amplifiers (AR-CSCCIA) with bandpass filters, 16 programmable transconductance gain amplifiers, a multiplexer, a transimpedance amplifier, and a 128-kS/s 10-bit delta-modulated successive-approximation-register analog-to-digital converter (SAR ADC). In closed-loop seizure control system applications, the stimulator shares the same electrode with the AFE amplifier for effective suppression of epileptic seizures. To prevent from overstress in MOS devices caused by high stimulation voltage, an input protection circuit with a high-voltage-tolerant switch is proposed for the AFE amplifier. Moreover, low input-referred noise is achieved by using the chopper modulation technique in the AR-CSCCIA. To reduce the undesired effects of chopper modulation, an improved offset reduction loop is proposed to reduce the output offset generated by input chopper mismatches. The digital ripple reduction loop is also used to reduce the chopper ripple. The fabricated AFE amplifier has 49.1-/59.4-/67.9-dB programmable gain and 2.02-μVrms input referred noise in a bandwidth of 0.59-117 Hz. The measured power consumption of the AFE amplifier is 3.26 μW per channel, and the noise efficiency factor is 3.36. The in vivo animal test has been successfully performed to verify the functions. It is shown that the proposed AFE acquisition circuit is suitable for implantable closed-loop seizure control systems.

The DIRC front-end electronics chain for BaBar

NASA Astrophysics Data System (ADS)

Bailly, P.; Chauveau, J.; Del Buono, L.; Genat, J. F.; Lebbolo, H.; Roos, L.; Zhang, B.; Beigbeder, C.; Bernier, R.; Breton, D.; Caceres, T.; Chase, R.; Ducorps, A.; Hrisoho, A.; Imbert, P.; Sen, S.; Tocut, V.; Truong, K.; Wormser, G.; Zomer, F.; Bonneaud, G.; Dohou, F.; Gastaldi, F.; Matricon, P.; Renard, C.; Thiebaux, C.; Vasileiadis, G.; Verderi, M.; Oxoby, G.; Va'Vra, J.; Warner, D.; Wilson, R. J.

1999-08-01

The detector of Internally Reflected Cherenkov light (DIRC) of the BaBar detector (SLAC Stanford, USA) measures better than 1 ns the arrival time of Cherenkov photoelectrons, detected in a 11 000 phototubes array and their amplitude spectra. It mainly comprises of 64-channel DIRC Front-End Boards (DFB) equipped with eight full-custom Analog chips performing zero-cross discrimination with 2 mV threshold and pulse shaping, four full-custom Digital TDC chips for timing measurements with 500 ps binning and a readout logic selecting hits in the trigger window, and DIRC Crate Controller cards (DCC) serializing the data collected from up to 16 DFBs onto a 1.2 Gb/s optical link. Extensive test of the pre-production chips have been performed as well as system tests.

Performances of the Front-End Electronics for the HADES RPC TOF wall on a 12C beam

NASA Astrophysics Data System (ADS)

Belver, D.; Cabanelas, P.; Castro, E.; Díaz, J.; Garzón, J. A.; Gil, A.; Gonzalez-Diaz, D.; Koenig, W.; Traxler, M.; Zapata, M.

2009-05-01

A Front-End Electronics (FEE) chain for timing accurate measurements has been developed for the RPC wall upgrade of the High-Acceptance DiElectron Spectrometer (HADES). The wall will cover an area of around 8 m with 1122 RPC cells (2244 electronic channels). The FEE chain consists of two boards: a four-channel DaughterBOard (DBO) and a 32-channel MotherBOard (MBO). The DBO uses a fast 2 GHz amplifier feeding a discriminator. The time and the charge information are encoded in the leading and the trailing edge (by a charge to width method) of an LVDS signal. Each MBO houses up to eight DBOs providing them regulated voltage supply, threshold values via DACs, test signals and collection of their trigger outputs. The MBO delivers LVDS signals to a time-to-digital converter readout board (TRB) based on HPTDC for data acquisition. In this work, we present the performance of the FEE measured using: (a) narrow electronic test pulses and (b) real signals read out in a fully instrumented RPC sextant installed in its final position at the HADES. The detector was exposed to particles coming from reactions of a 12C beam on Be and Nb targets at 2 GeV/A kinetic energy. Results for the whole electronic chain (DBO+MBO+TRB) show a timing jitter of around 40 ps/channel for pulses above 100 fC and 80 ps/channel for beam data taken with the RPC.

Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

DOEpatents

Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

2013-01-15

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

Status of the photomultiplier-based FlashCam camera for the Cherenkov Telescope Array

NASA Astrophysics Data System (ADS)

Pühlhofer, G.; Bauer, C.; Eisenkolb, F.; Florin, D.; Föhr, C.; Gadola, A.; Garrecht, F.; Hermann, G.; Jung, I.; Kalekin, O.; Kalkuhl, C.; Kasperek, J.; Kihm, T.; Koziol, J.; Lahmann, R.; Manalaysay, A.; Marszalek, A.; Rajda, P. J.; Reimer, O.; Romaszkan, W.; Rupinski, M.; Schanz, T.; Schwab, T.; Steiner, S.; Straumann, U.; Tenzer, C.; Vollhardt, A.; Weitzel, Q.; Winiarski, K.; Zietara, K.

2014-07-01

The FlashCam project is preparing a camera prototype around a fully digital FADC-based readout system, for the medium sized telescopes (MST) of the Cherenkov Telescope Array (CTA). The FlashCam design is the first fully digital readout system for Cherenkov cameras, based on commercial FADCs and FPGAs as key components for digitization and triggering, and a high performance camera server as back end. It provides the option to easily implement different types of trigger algorithms as well as digitization and readout scenarios using identical hardware, by simply changing the firmware on the FPGAs. The readout of the front end modules into the camera server is Ethernet-based using standard Ethernet switches and a custom, raw Ethernet protocol. In the current implementation of the system, data transfer and back end processing rates of 3.8 GB/s and 2.4 GB/s have been achieved, respectively. Together with the dead-time-free front end event buffering on the FPGAs, this permits the cameras to operate at trigger rates of up to several ten kHz. In the horizontal architecture of FlashCam, the photon detector plane (PDP), consisting of photon detectors, preamplifiers, high voltage-, control-, and monitoring systems, is a self-contained unit, mechanically detached from the front end modules. It interfaces to the digital readout system via analogue signal transmission. The horizontal integration of FlashCam is expected not only to be more cost efficient, it also allows PDPs with different types of photon detectors to be adapted to the FlashCam readout system. By now, a 144-pixel mini-camera" setup, fully equipped with photomultipliers, PDP electronics, and digitization/ trigger electronics, has been realized and extensively tested. Preparations for a full-scale, 1764 pixel camera mechanics and a cooling system are ongoing. The paper describes the status of the project.

Making a Back-Illuminated Imager with Back-Side Contact and Alignment Markers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2008-01-01

A design modification and a fabrication process that implements the modification have been conceived to solve two problems encountered in the development of back-illuminated, back-sidethinned complementary metal oxide/ semiconductor (CMOS) image-detector integrated circuits. The two problems are (1) how to form metal electrical-contact pads on the back side that are electrically connected through the thickness in proper alignment with electrical contact points on the front side and (2) how to provide alignment keys on the back side to ensure proper registration of backside optical components (e.g., microlenses and/or color filters) with the front-side pixel pattern. The essence of the design modification is to add metal plugs that extend from the desired front-side locations through the thickness and protrude from the back side of the substrate. The plugs afford the required front-to-back electrical conduction, and the protrusions of the plugs serve as both the alignment keys and the bases upon which the back-side electrical-contact pads can be formed.

Choice and maintenance of equipment for electron crystallography.

PubMed

Mills, Deryck J; Vonck, Janet

2013-01-01

The choice of equipment for an electron crystallography laboratory will ultimately be determined by the available budget; nevertheless, the ideal lab will have two electron microscopes: a dedicated 300 kV cryo-EM with a field emission gun and a smaller LaB(6) machine for screening. The high-end machine should be equipped with photographic film or a very large CCD or CMOS camera for 2D crystal data collection; the screening microscope needs a mid-size CCD for rapid evaluation of crystal samples. The microscope room installations should provide adequate space and a special environment that puts no restrictions on the collection of high-resolution data. Equipment for specimen preparation includes a carbon coater, glow discharge unit, light microscope, plunge freezer, and liquid nitrogen containers and storage dewars. When photographic film is to be used, additional requirements are a film desiccator, dark room, optical diffractometer, and a film scanner. Having the electron microscopes and ancillary equipment well maintained and always in optimum condition facilitates the production of high-quality data.

Frontend Receiver Electronics for High Frequency Monolithic CMUT-on-CMOS Imaging Arrays

PubMed Central

Gurun, Gokce; Hasler, Paul; Degertekin, F. Levent

2012-01-01

This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for high-frequency intravascular ultrasound imaging. A custom 8-inch wafer is fabricated in a 0.35 μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulse-echo measurement. Transducer noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 MHz to 20 MHz. PMID:21859585

Fundamental performance differences between CMOS and CCD imagers, part IV

NASA Astrophysics Data System (ADS)

Janesick, James; Pinter, Jeff; Potter, Robert; Elliott, Tom; Andrews, James; Tower, John; Grygon, Mark; Keller, Dave

2010-07-01

This paper is a continuation of past papers written on fundamental performance differences of scientific CMOS and CCD imagers. New characterization results presented below include: 1). a new 1536 × 1536 × 8μm 5TPPD pixel CMOS imager, 2). buried channel MOSFETs for random telegraph noise (RTN) and threshold reduction, 3) sub-electron noise pixels, 4) 'MIM pixel' for pixel sensitivity (V/e-) control, 5) '5TPPD RING pixel' for large pixel, high-speed charge transfer applications, 6) pixel-to-pixel blooming control, 7) buried channel photo gate pixels and CMOSCCDs, 8) substrate bias for deep depletion CMOS imagers, 9) CMOS dark spikes and dark current issues and 10) high energy radiation damage test data. Discussions are also given to a 1024 × 1024 × 16 um 5TPPD pixel imager currently in fabrication and new stitched CMOS imagers that are in the design phase including 4k × 4k × 10 μm and 10k × 10k × 10 um imager formats.

Image Capture and Display Based on Embedded Linux

NASA Astrophysics Data System (ADS)

Weigong, Zhang; Suran, Di; Yongxiang, Zhang; Liming, Li

For the requirement of building a highly reliable communication system, SpaceWire was selected in the integrated electronic system. There was a need to test the performance of SpaceWire. As part of the testing work, the goal of this paper is to transmit image data from CMOS camera through SpaceWire and display real-time images on the graphical user interface with Qt in the embedded development platform of Linux & ARM. A point-to-point mode of transmission was chosen; the running result showed the two communication ends basically reach a consensus picture in succession. It suggests that the SpaceWire can transmit the data reliably.

The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems

NASA Astrophysics Data System (ADS)

Mikolajick, T.; Heinzig, A.; Trommer, J.; Baldauf, T.; Weber, W. M.

2017-04-01

With CMOS scaling reaching physical limits in the next decade, new approaches are required to enhance the functionality of electronic systems. Reconfigurability on the device level promises to realize more complex systems with a lower device count. In the last five years a number of interesting concepts have been proposed to realize such a device level reconfiguration. Among these the reconfigurable field effect transistor (RFET), a device that can be configured between an n-channel and p-channel behavior by applying an electrical signal, can be considered as an end-of-roadmap extension of current technology with only small modifications and even simplifications to the process flow. This article gives a review on the RFET basics and current status. In the first sections state-of-the-art of reconfigurable devices will be summarized and the RFET will be introduced together with related devices based on silicon nanowire technology. The device optimization with respect to device symmetry and performance will be discussed next. The potential of the RFET device technology will then be shown by discussing selected circuit implementations making use of the unique advantages of this device concept. The basic device concept was also extended towards applications in flexible devices and sensors, also extending the capabilities towards so-called More-than-Moore applications where new functionalities are implemented in CMOS-based processes. Finally, the prospects of RFET device technology will be discussed.

A compact, low-loss, tunable phase shifter on defect mitigated dielectrics up to 40 GHz

NASA Astrophysics Data System (ADS)

Orloff, Nathan; Long, Christian; Lu, Xifeng; Nair, Hari; Dawley, Natalie; Schlom, Darrell; Booth, James

With the emergence of the internet-of-things and increased connectivity of modern commerce, consumers have driven demand for wireless spectrum beyond current capacity and infrastructure capabilities. One way the telecommunications industry is addressing this problem is by pushing front-end electronics to higher frequencies, introducing carrier aggregation schemes, and developing spectrum-sharing techniques. Some of these solutions require frequency agile components that are vastly different from what is in today's marketplace. Perhaps the most basic and ubiquitous component in front-end electronics is the phase shifter. Phase shifters are particularly important for compact beam-forming antennas that may soon appear in commercial technology. Here, we demonstrate a compact, tunable phase shifter with very low insertion loss up to 40 GHz on a defect mitigated tunable dielectric. We demonstrate performance compared to barium-doped strontium titanate phase shifters. Such phase shifters could potentially meet the stringent size and performance characteristics demanded by telecommunications industry, readily facilitating massive multiple-input multiple-output antennas in the next-generation of mobile handsets.

Gauss-Seidel Iterative Method as a Real-Time Pile-Up Solver of Scintillation Pulses

NASA Astrophysics Data System (ADS)

Novak, Roman; Vencelj, Matja¿

2009-12-01

The pile-up rejection in nuclear spectroscopy has been confronted recently by several pile-up correction schemes that compensate for distortions of the signal and subsequent energy spectra artifacts as the counting rate increases. We study here a real-time capability of the event-by-event correction method, which at the core translates to solving many sets of linear equations. Tight time limits and constrained front-end electronics resources make well-known direct solvers inappropriate. We propose a novel approach based on the Gauss-Seidel iterative method, which turns out to be a stable and cost-efficient solution to improve spectroscopic resolution in the front-end electronics. We show the method convergence properties for a class of matrices that emerge in calorimetric processing of scintillation detector signals and demonstrate the ability of the method to support the relevant resolutions. The sole iteration-based error component can be brought below the sliding window induced errors in a reasonable number of iteration steps, thus allowing real-time operation. An area-efficient hardware implementation is proposed that fully utilizes the method's inherent parallelism.

Front End Software for Online Database Searching. Part 2: The Marketplace.

ERIC Educational Resources Information Center

Levy, Louise R.; Hawkins, Donald T.

1986-01-01

This article analyzes the front end software marketplace and discusses some of the complex forces influencing it. Discussion covers intermediary market; end users (library customers, scientific and technical professionals, corporate business specialists, consumers); marketing strategies; a British front end development firm; competitive pressures;…

Space Electronics: A Challenging World for Designers

NASA Technical Reports Server (NTRS)

Poivey, Christian; LaBel, Kenneth A.

2004-01-01

This viewgraph presentation provides an overview of: 1) The Space Radiation Environment; 2) The Effects on Electronics; 3) The Environment in Action; 4) Hardening Approaches to Commercial CMOS Electronics (including device vulnerabilities).

Full analogue electronic realisation of the Hodgkin-Huxley neuronal dynamics in weak-inversion CMOS.

PubMed

Lazaridis, E; Drakakis, E M; Barahona, M

2007-01-01

This paper presents a non-linear analog synthesis path towards the modeling and full implementation of the Hodgkin-Huxley neuronal dynamics in silicon. The proposed circuits have been realized in weak-inversion CMOS technology and take advantage of both log-domain and translinear transistor-level techniques.

A CMOS VLSI IC for Real-Time Opto-Electronic Two-Dimensional Histogram Generation

DTIC Science & Technology

1993-12-01

large scale integration) design; MAGIC ; CMOS; optics; image processing; 93 16. PRICE CODE 17. SECURITY CLASSIFICATION 18. SECURITY CLASSIFICATiON 19...1. Sun SPARCstation ............. .............. 6 2. Magic .................. ................... 6 a. Peg ................. .................. 7 b...38 v APPENDIX B. MAGIC CELL LAYOUTS .... ............ .. 39 APPENDIX C: SIMULATION DATA ....... ............. .. 56 A. FINITE STATE MACHINE

EARS: Electronic Access to Reference Service.

PubMed Central

Weise, F O; Borgendale, M

1986-01-01

Electronic Access to Reference Service (EARS) is a front end to the Health Sciences Library's electronic mail system, with links to the online public catalog. EARS, which became operational in September 1984, is accessed by users at remote sites with either a terminal or microcomputer. It is menu-driven, allowing users to request: a computerized literature search, reference information, a photocopy of a journal article, or a book. This paper traces the history of EARS and discusses its use, its impact on library staff and services, and factors that influence the diffusion of new technology. PMID:3779167

EARS: Electronic Access to Reference Service.

PubMed

Weise, F O; Borgendale, M

1986-10-01

Electronic Access to Reference Service (EARS) is a front end to the Health Sciences Library's electronic mail system, with links to the online public catalog. EARS, which became operational in September 1984, is accessed by users at remote sites with either a terminal or microcomputer. It is menu-driven, allowing users to request: a computerized literature search, reference information, a photocopy of a journal article, or a book. This paper traces the history of EARS and discusses its use, its impact on library staff and services, and factors that influence the diffusion of new technology.

CMOS sensor as charged particles and ionizing radiation detector

NASA Astrophysics Data System (ADS)

Cruz-Zaragoza, E.; Piña López, I.

2015-01-01

This paper reports results of CMOS sensor suitable for use as charged particles and ionizing radiation detector. The CMOS sensor with 640 × 480 pixels area has been integrated into an electronic circuit for detection of ionizing radiation and it was exposed to alpha particle (Am-241, Unat), beta (Sr-90), and gamma photons (Cs-137). Results show after long period of time (168 h) irradiation the sensor had not loss of functionality and also the energy of the charge particles and photons were very well obtained.

Internal monitoring of GBTx emulator using IPbus for CBM experiment

NASA Astrophysics Data System (ADS)

Mandal, Swagata; Zabolotny, Wojciech; Sau, Suman; Chkrabarti, Amlan; Saini, Jogender; Chattopadhyay, Subhasis; Pal, Sushanta Kumar

2015-09-01

The Compressed Baryonic Matter (CBM) experiment is a part of the Facility for Antiproton and Ion Research (FAIR) in Darmstadt at GSI. In CBM experiment a precisely time synchronized fault tolerant self-triggered electronics is required for Data Acquisition (DAQ) system in CBM experiments which can support high data rate (up to several TB/s). As a part of the implementation of the DAQ system of Muon Chamber (MUCH) which is one of the important detectors in CBM experiment, a FPGA based Gigabit Transceiver (GBTx) emulator is implemented. Readout chain for MUCH consists of XYTER chips (Front end electronics) which will be directly connected to detector, GBTx emulator, Data Processing Board (DPB) and First level event selector board (FLIB) with backend software interface. GBTx emulator will be connected with the XYTER emulator through LVDS (Low Voltage Differential Signalling) line in the front end and in the back end it is connected with DPB through 4.8 Gbps optical link. IPBus over Ethernet is used for internal monitoring of the registers within the GBTx. In IPbus implementation User Datagram Protocol (UDP) stack is used in transport layer of OSI model so that GBTx can be controlled remotely. A Python script is used at computer side to drive IPbus controller.

The Mobile Internet -The Next Big Thing. Electrons & Photons: You Need Both! (BRIEFING CHARTS)

DTIC Science & Technology

2007-03-05

Links Network Centric Warfighting Comms Wired & Wireless Links 20th Century 21th Century The Military Comms Problem Network Centric Operationst t i ti...Small Unit Operations TEL Underwater Vehicles & Towed Arrays RC-135V Rivet Joint Tier II+ UAV Global Hawk E-2C Hawkeye Networked Manned and Unmanned...RF Front-End Solutions ● >20 DARPA/MTO RF Programs across the spectrum - RF & Mixed Signal Electronics - Analog & Digital Photonics Enables Network

All-digital full waveform recording photon counting flash lidar

NASA Astrophysics Data System (ADS)

Grund, Christian J.; Harwit, Alex

2010-08-01

Current generation analog and photon counting flash lidar approaches suffer from limitation in waveform depth, dynamic range, sensitivity, false alarm rates, optical acceptance angle (f/#), optical and electronic cross talk, and pixel density. To address these issues Ball Aerospace is developing a new approach to flash lidar that employs direct coupling of a photocathode and microchannel plate front end to a high-speed, pipelined, all-digital Read Out Integrated Circuit (ROIC) to achieve photon-counting temporal waveform capture in each pixel on each laser return pulse. A unique characteristic is the absence of performance-limiting analog or mixed signal components. When implemented in 65nm CMOS technology, the Ball Intensified Imaging Photon Counting (I2PC) flash lidar FPA technology can record up to 300 photon arrivals in each pixel with 100 ps resolution on each photon return, with up to 6000 range bins in each pixel. The architecture supports near 100% fill factor and fast optical system designs (f/#<1), and array sizes to 3000×3000 pixels. Compared to existing technologies, >60 dB ultimate dynamic range improvement, and >104 reductions in false alarm rates are anticipated, while achieving single photon range precision better than 1cm. I2PC significantly extends long-range and low-power hard target imaging capabilities useful for autonomous hazard avoidance (ALHAT), navigation, imaging vibrometry, and inspection applications, and enables scannerless 3D imaging for distributed target applications such as range-resolved atmospheric remote sensing, vegetation canopies, and camouflage penetration from terrestrial, airborne, GEO, and LEO platforms. We discuss the I2PC architecture, development status, anticipated performance advantages, and limitations.

Fully CMOS-compatible titanium nitride nanoantennas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Briggs, Justin A., E-mail: jabriggs@stanford.edu; Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305; Naik, Gururaj V.

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements onmore » plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.« less

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

PubMed Central

Pavunny, Shojan P.; Scott, James F.; Katiyar, Ram S.

2014-01-01

A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article. PMID:28788589

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

PubMed

Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

2008-11-01

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Observational evidence for thermal wave fronts in solar flares

NASA Technical Reports Server (NTRS)

Rust, D. M.; Simnett, G. M.; Smith, D. F.

1985-01-01

Images in 3.5-30 keV X-rays obtained during the first few minutes of seven solar flares show rapid motions. In each case X-ray emission first appeared at one end of a magnetic field structure, and then propagated along the field at a velocity between 800 and 1700 km/s. The observed X-ray structures were 45,000-230,000 km long. Simultaneous H-alpha images were available in three cases; they showed brightenings when the fast-moving fronts arrived at the chromosphere. The fast-moving fronts are interpreted as electron thermal conduction fronts since their velocities are consistent with conduction at the observed temperatures of 1-3 x 10 to the 7th K. The inferred conductive heat flux of up to 10-billion ergs/s sq cm accounts for most of the energy released in the flares, implying that the flares were primarily thermal phenomena.

DNA decorated carbon nanotube sensors on CMOS circuitry for environmental monitoring

NASA Astrophysics Data System (ADS)

Liu, Yu; Chen, Chia-Ling; Agarwal, V.; Li, Xinghui; Sonkusale, S.; Dokmeci, Mehmet R.; Wang, Ming L.

2010-04-01

Single-walled carbon nanotubes (SWNTs) with their large surface area, high aspect ratio are one of the novel materials which have numerous attractive features amenable for high sensitivity sensors. Several nanotube based sensors including, gas, chemical and biosensors have been demonstrated. Moreover, most of these sensors require off chip components to detect the variations in the signals making them complicated and hard to commercialize. Here we present a novel complementary metal oxide semiconductor (CMOS) integrated carbon nanotube sensors for portable high sensitivity chemical sensing applications. Multiple zincation steps have been developed to ascertain proper electrical connectivity between the carbon nanotubes and the foundry made CMOS circuitry. The SWNTs have been integrated onto (CMOS) circuitry as the feedback resistor of a Miller compensated operational amplifier utilizing low temperature Dielectrophoretic (DEP) assembly process which has been tailored to be compatible with the post-CMOS integration at the die level. Building nanotube sensors directly on commercial CMOS circuitry allows single chip solutions eliminating the need for long parasitic lines and numerous wire bonds. The carbon nanotube sensors realized on CMOS circuitry show strong response to various vapors including Dimethyl methylphosphonate and Dinitrotoluene. The remarkable set of attributes of the SWNTs realized on CMOS electronic chips provides an attractive platform for high sensitivity portable nanotube based bio and chemical sensors.

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

2009-01-01

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

Recent advances in the front-end sources of the LMJ fusion laser

NASA Astrophysics Data System (ADS)

Gleyze, Jean-François; Hares, Jonathan; Vidal, Sebastien; Beck, Nicolas; Dubertrand, Jerome; Perrin, Arnaud

2011-03-01

LMJ is typical of lasers used for inertial confinement fusion and requires a laser of programmable parameters for injection into the main amplifier. For several years, the CEA has developed front end fiber sources, based on telecommunications fiber optics technologies. These sources meet the needs but as the technology evolves we can expect improved efficiency and reductions in size and cost. We give an up-to-date description of some present development issues, particularly in the field of temporal shaping with the use of digital system. The synchronization of such electronics has been challenging however we now obtain system jitter of less then 7ps rms. Secondly, we will present recent advance in the use of fiber based pre-comp system to avoid parasitic amplitude modulation from phase modulation used for spectral broadening.

Performance of a resistive plate chamber equipped with a new prototype of amplified front-end electronics in the ALICE detector

NASA Astrophysics Data System (ADS)

Marchisone, Massimiliano

2017-09-01

ALICE is the LHC experiment dedicated to the study of heavy-ion collisions. At forward rapidity a muon spectrometer detects muons from low mass mesons, quarkonia (c\\bar{c} and b\\bar{b} mesons), open heavy-flavor hadrons (D and B mesons) as well as from weak bosons. A muon selection based on transverse momentum is made by a trigger system composed of 72 Resistive Plate Chambers (RPCs). For the LHC Run 1 and the ongoing Run 2 the RPCs have been equipped with a non-amplified Front-End Electronics (FEE) called ADULT. However, in view of an increase in luminosity expected for Run 3 (foreseen to start in 2021) the possibility to use an amplified FEE has been explored in order to improve the counting rate limitation and to prevent the aging of the detector by reducing the charge per hit. A prototype of this new electronics (FEERIC) has been developed and tested first with cosmic rays before equipping one RPC in the ALICE cavern with it. In this proceeding the most important performance indicators (such as efficiency, dark current, dark rate, cluster size, total charge and charge per hit) of the RPC equipped with this new FEE will be reviewed and compared to the others read out with ADULT.

Charge-sensitive front-end electronics with operational amplifiers for CdZnTe detectors

NASA Astrophysics Data System (ADS)

Födisch, P.; Berthel, M.; Lange, B.; Kirschke, T.; Enghardt, W.; Kaever, P.

2016-09-01

Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, the present study develops the analog front-end electronics with operational amplifiers for an 8×8 pixelated CZT detector. For this purpose, we modeled an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Based on a detailed network analysis, the circuit design is completed by numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, and noise level. A verification of the performance is carried out by synthetic detector signals and a pixel detector. The experimental results with the pixel detector assembly and a 22Na radioactive source emphasize the depth dependence of the measured energy. After pulse processing with depth correction based on the fit of the weighting potential, the energy resolution is 2.2% (FWHM) for the 511 keV photopeak.

Further applications for mosaic pixel FPA technology

NASA Astrophysics Data System (ADS)

Liddiard, Kevin C.

2011-06-01

In previous papers to this SPIE forum the development of novel technology for next generation PIR security sensors has been described. This technology combines the mosaic pixel FPA concept with low cost optics and purpose-designed readout electronics to provide a higher performance and affordable alternative to current PIR sensor technology, including an imaging capability. Progressive development has resulted in increased performance and transition from conventional microbolometer fabrication to manufacture on 8 or 12 inch CMOS/MEMS fabrication lines. A number of spin-off applications have been identified. In this paper two specific applications are highlighted: high performance imaging IRFPA design and forest fire detection. The former involves optional design for small pixel high performance imaging. The latter involves cheap expendable sensors which can detect approaching fire fronts and send alarms with positional data via mobile phone or satellite link. We also introduce to this SPIE forum the application of microbolometer IR sensor technology to IoT, the Internet of Things.

Loran digital phase-locked loop and RF front-end system error analysis

NASA Technical Reports Server (NTRS)

Mccall, D. L.

1979-01-01

An analysis of the system performance of the digital phase locked loops (DPLL) and RF front end that are implemented in the MINI-L4 Loran receiver is presented. Three of the four experiments deal with the performance of the digital phase locked loops. The other experiment deals with the RF front end and DPLL system error which arise in the front end due to poor signal to noise ratios. The ability of the DPLLs to track the offsets is studied.

Navigating the Information Ocean: Charting the Course. Abstracts from the Academic Library Association of Ohio Annual Conference (Columbus, Ohio, November 4, 1994).

ERIC Educational Resources Information Center

Academic Library Association of Ohio.

Abstracts of 14 papers presented at the conference are provided here. Titles are: "Electronic Information Terraforming: Designing and Implementing a Front-end System Using World-Wide Web Technology" (Abbie Basile; And Others); "Characteristics of Generation X and Implications for Reference and Instructional Services" (Catherine…

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Fast wire per wire X-ray data acquisition system for time-resolved small angle scattering experiments

NASA Astrophysics Data System (ADS)

Epstein, A.; Briquet-Laugier, F.; Sheldon, S.; Boulin, C.

2000-04-01

Most of the X-ray multi-wire gas detectors used at the EMBL Hamburg outstation for time-resolved studies of biological samples are readout, using the delay line method. The main disadvantage of such readout systems is their event rate limitation introduced by the delay line and the required time to digital conversion step. They also lack the possibility to deal with multiple events. To overcome these limitations, a new approach for the complete readout system was introduced. The new linear detection system is based on the wire per wire approach where each individual wire is associated to preamplifier/discriminator/counter electronics channel. High-density, front-end electronics were designed around a fast current sensitive preamplifier. An eight-channel board was designed to include the preamplifiers-discriminators and the differential ECL drivers output stages. The detector front-end consists of 25 boards directly mounted inside the detector assembly. To achieve a time framing resolution as short as 10 /spl mu/s, very fast histogramming is required. The only way to implement this for a high number of channels (200 in our case) is by using a distributed system. The digital part of the system consists of a crate controller, up to 16 acquisition boards (capable of handling fast histogramming for up to 32-channels each) and an optical-link board (based on the Cypress "Hot-Link" chip set). Both the crate controller and the acquisition boards are based on a standard RISC microcontroller (IDT R3081) plug-in board. At present, a dedicated CAMAC module which we developed is used to interface the digital front-end acquisition crate to the host via the optical link.

A CMOS high speed imaging system design based on FPGA

NASA Astrophysics Data System (ADS)

Tang, Hong; Wang, Huawei; Cao, Jianzhong; Qiao, Mingrui

2015-10-01

CMOS sensors have more advantages than traditional CCD sensors. The imaging system based on CMOS has become a hot spot in research and development. In order to achieve the real-time data acquisition and high-speed transmission, we design a high-speed CMOS imaging system on account of FPGA. The core control chip of this system is XC6SL75T and we take advantages of CameraLink interface and AM41V4 CMOS image sensors to transmit and acquire image data. AM41V4 is a 4 Megapixel High speed 500 frames per second CMOS image sensor with global shutter and 4/3" optical format. The sensor uses column parallel A/D converters to digitize the images. The CameraLink interface adopts DS90CR287 and it can convert 28 bits of LVCMOS/LVTTL data into four LVDS data stream. The reflected light of objects is photographed by the CMOS detectors. CMOS sensors convert the light to electronic signals and then send them to FPGA. FPGA processes data it received and transmits them to upper computer which has acquisition cards through CameraLink interface configured as full models. Then PC will store, visualize and process images later. The structure and principle of the system are both explained in this paper and this paper introduces the hardware and software design of the system. FPGA introduces the driven clock of CMOS. The data in CMOS is converted to LVDS signals and then transmitted to the data acquisition cards. After simulation, the paper presents a row transfer timing sequence of CMOS. The system realized real-time image acquisition and external controls.

Research on application of several tracking detectors in APT system

NASA Astrophysics Data System (ADS)

Liu, Zhi

2005-01-01

APT system is the key technology in free space optical communication system, and acquisition and tracking detector is the key component in PAT system. There are several candidate detectors that can be used in PAT system, such as CCD, QAPD and CMOS Imager etc. The characteristics of these detectors are quite different, i.e., the structures and the working schemes. This paper gives thoroughly compare of the usage and working principle of CCD and CMOS imager, and discusses the key parameters like tracking error, noise analyses, power analyses etc. Conclusion is given at the end of this paper that CMOS imager is a good candidate detector for PAT system in free space optical communication system.

A scalable silicon photonic chip-scale optical switch for high performance computing systems.

PubMed

Yu, Runxiang; Cheung, Stanley; Li, Yuliang; Okamoto, Katsunari; Proietti, Roberto; Yin, Yawei; Yoo, S J B

2013-12-30

This paper discusses the architecture and provides performance studies of a silicon photonic chip-scale optical switch for scalable interconnect network in high performance computing systems. The proposed switch exploits optical wavelength parallelism and wavelength routing characteristics of an Arrayed Waveguide Grating Router (AWGR) to allow contention resolution in the wavelength domain. Simulation results from a cycle-accurate network simulator indicate that, even with only two transmitter/receiver pairs per node, the switch exhibits lower end-to-end latency and higher throughput at high (>90%) input loads compared with electronic switches. On the device integration level, we propose to integrate all the components (ring modulators, photodetectors and AWGR) on a CMOS-compatible silicon photonic platform to ensure a compact, energy efficient and cost-effective device. We successfully demonstrate proof-of-concept routing functions on an 8 × 8 prototype fabricated using foundry services provided by OpSIS-IME.

Integrated circuits for volumetric ultrasound imaging with 2-D CMUT arrays.

PubMed

Bhuyan, Anshuman; Choe, Jung Woo; Lee, Byung Chul; Wygant, Ira O; Nikoozadeh, Amin; Oralkan, Ömer; Khuri-Yakub, Butrus T

2013-12-01

Real-time volumetric ultrasound imaging systems require transmit and receive circuitry to generate ultrasound beams and process received echo signals. The complexity of building such a system is high due to requirement of the front-end electronics needing to be very close to the transducer. A large number of elements also need to be interfaced to the back-end system and image processing of a large dataset could affect the imaging volume rate. In this work, we present a 3-D imaging system using capacitive micromachined ultrasonic transducer (CMUT) technology that addresses many of the challenges in building such a system. We demonstrate two approaches in integrating the transducer and the front-end electronics. The transducer is a 5-MHz CMUT array with an 8 mm × 8 mm aperture size. The aperture consists of 1024 elements (32 × 32) with an element pitch of 250 μm. An integrated circuit (IC) consists of a transmit beamformer and receive circuitry to improve the noise performance of the overall system. The assembly was interfaced with an FPGA and a back-end system (comprising of a data acquisition system and PC). The FPGA provided the digital I/O signals for the IC and the back-end system was used to process the received RF echo data (from the IC) and reconstruct the volume image using a phased array imaging approach. Imaging experiments were performed using wire and spring targets, a ventricle model and a human prostrate. Real-time volumetric images were captured at 5 volumes per second and are presented in this paper.

Development of cryogenic CMOS Readout ASICs for the Point-Contact HPGe Detectors for Dark Matter Search and Neutrino Experiments

NASA Astrophysics Data System (ADS)

Deng, Zhi; He, Li; Liu, Feng; Liu, Yinong; Xue, Tao; Li, Yulan; Yue, Qian

2017-05-01

The paper presents the developments of two cryogenic readout ASICs for the point-contact HPGe detectors for dark matter search and neutrino experiments. Extremely low noise readout electronics were demanded and the capability of working at cryogenic temperatures may bring great advantages. The first ASIC was a monolithic CMOS charge sensitive preamplifier with its noise optimized for ∼1 pF input capacitance. The second ASIC was a waveform recorder based on switched capacitor array. These two ASICs were fabricated in CMOS 350 nm and 180 nm processes respectively. The prototype chips were tested and showed promising results. Both ASICs worked well at low temperature. The preamplifier had achieved ENC of 10.3 electrons with 0.7 pF input capacitance and the SCA chip could run at 9 bit effective resolution and 25 MSPS sampling rate.

Fully Integrated Optical Spectrometer in Visible and Near-IR in CMOS.

PubMed

Hong, Lingyu; Sengupta, Kaushik

2017-12-01

Optical spectrometry in the visible and near-infrared range has a wide range of applications in healthcare, sensing, imaging, and diagnostics. This paper presents the first fully integrated optical spectrometer in standard bulk CMOS process without custom fabrication, postprocessing, or any external optical passive structure such as lenses, gratings, collimators, or mirrors. The architecture exploits metal interconnect layers available in CMOS processes with subwavelength feature sizes to guide, manipulate, control, diffract light, integrated photodetector, and read-out circuitry to detect dispersed light, and then back-end signal processing for robust spectral estimation. The chip, realized in bulk 65-nm low power-CMOS process, measures 0.64 mm 0.56 mm in active area, and achieves 1.4 nm in peak detection accuracy for continuous wave excitations between 500 and 830 nm. This paper demonstrates the ability to use these metal-optic nanostructures to miniaturize complex optical instrumentation into a new class of optics-free CMOS-based systems-on-chip in the visible and near-IR for various sensing and imaging applications.

A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

PubMed Central

Rae, Bruce R.; Muir, Keith R.; Gong, Zheng; McKendry, Jonathan; Girkin, John M.; Gu, Erdan; Renshaw, David; Dawson, Martin D.; Henderson, Robert K.

2009-01-01

We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented. PMID:22291564

Design and performance of the readout electronics chain of the Delphi Forward Ring Imaging Cherenkov Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dam, P.; Nielsen, B.S.; Formenti, F.

1992-10-01

In this paper the Front End Readout electronics chain of the Forward Ring Imaging CHerenkov (FRICH) Detector used at the Delphi experiment of the Large Electron Positron (LEP) collider is presented. The system incorporates a wide band low noise preamplifier, mounted in the proximity of the MultiWire Proportional Chamber, an Amplifying-Discriminating-Multiple-xing FASTBUS unit for further signal amplification, discrimination and channel reduction and a LEP Time Digitizer FASTBUS unit for time digitization. The paper gives a general view of the detector and its electronics with particular emphasis on the novel characteristics and capabilities of the system.

Readout Electronics for the ATLAS LAr Calorimeter at HL-LHC

NASA Astrophysics Data System (ADS)

Chen, Hucheng; ATLAS Liquid Argon Calorimeter Group

The ATLAS Liquid Argon (LAr) calorimeters are high precision, high sensitivity and high granularity detectors designed to provide precision measurements of electrons, photons, jets and missing transverse energy. ATLAS and its LAr calorimeters have been operating and collecting proton-proton collisions at LHC since 2009. The current front-end electronics of the LAr calorimeters need to be upgraded to sustain the higher radiation levels and data rates expected at the upgraded high luminosity LHC machine (HL-LHC), which will have 5 times more luminosity than the LHC in its ultimate configuration. The complexity of the present electronics and the obsolescence of some of components of which it is made, will not allow a partial replacement of the system. A completely new readout architecture scheme is under study and many components are being developed in various R&D programs of the LAr Calorimeter Group.The new front-end readout electronics will send data continuously at each bunch crossing through high speed radiation resistant optical links. The data will be processed real-time with the possibility of implementing trigger algorithms for clusters and electron/photon identification at a higher granularity than that which is currently implemented. The new architecture will eliminate the intrinsic limitation presently existing on Level-1 trigger acceptance. This article is an overview of the R&D activities which covers architectural design aspects of the new electronics as well as some detailed progress on the development of several ASICs needed, and preliminary studies with FPGAs to cover the backend functions including part of the Level-1 trigger requirements. A recently proposed staged upgrade with hybrid Tower Builder Board (TBB) is also described.

Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

DEAL annual report.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Misra, Shashank

2017-11-01

The digital electronics at the atomic limit (DEAL) project seeks to leverage Sandia's atomic-precision fabrication capability to realize the theorized orders-of-magnitude improvement in operating voltage for tunnel field effect transistors (TFETs) compared to CMOS. Not only are low-power digital circuits a critical element of many national security systems (e.g. satellites), TFETs can perform circuit functions inaccessible to CMOS (e.g. polymorphism).

Towards a Chemiresistive Sensor-Integrated Electronic Nose: A Review

PubMed Central

Chiu, Shih-Wen; Tang, Kea-Tiong

2013-01-01

Electronic noses have potential applications in daily life, but are restricted by their bulky size and high price. This review focuses on the use of chemiresistive gas sensors, metal-oxide semiconductor gas sensors and conductive polymer gas sensors in an electronic nose for system integration to reduce size and cost. The review covers the system design considerations and the complementary metal-oxide-semiconductor integrated technology for a chemiresistive gas sensor electronic nose, including the integrated sensor array, its readout interface, and pattern recognition hardware. In addition, the state-of-the-art technology integrated in the electronic nose is also presented, such as the sensing front-end chip, electronic nose signal processing chip, and the electronic nose system-on-chip. PMID:24152879

40 CFR 63.487 - Batch front-end process vents-reference control technology.

Code of Federal Regulations, 2012 CFR

2012-07-01

...-reference control technology. 63.487 Section 63.487 Protection of Environment ENVIRONMENTAL PROTECTION... SOURCE CATEGORIES National Emission Standards for Hazardous Air Pollutant Emissions: Group I Polymers and Resins § 63.487 Batch front-end process vents—reference control technology. (a) Batch front-end process...

40 CFR 63.491 - Batch front-end process vents-recordkeeping requirements.

Code of Federal Regulations, 2014 CFR

2014-07-01

... CATEGORIES National Emission Standards for Hazardous Air Pollutant Emissions: Group I Polymers and Resins § 63.491 Batch front-end process vents—recordkeeping requirements. (a) Group determination records for...) through (a)(6) of this section for each batch front-end process vent subject to the group determination...

40 CFR 63.487 - Batch front-end process vents-reference control technology.

Code of Federal Regulations, 2011 CFR

2011-07-01

... control technology. 63.487 Section 63.487 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... CATEGORIES National Emission Standards for Hazardous Air Pollutant Emissions: Group I Polymers and Resins § 63.487 Batch front-end process vents—reference control technology. (a) Batch front-end process vents...

40 CFR 63.491 - Batch front-end process vents-recordkeeping requirements.

Code of Federal Regulations, 2013 CFR

2013-07-01

... CATEGORIES National Emission Standards for Hazardous Air Pollutant Emissions: Group I Polymers and Resins § 63.491 Batch front-end process vents—recordkeeping requirements. (a) Group determination records for...) through (a)(6) of this section for each batch front-end process vent subject to the group determination...

40 CFR 63.487 - Batch front-end process vents-reference control technology.

Code of Federal Regulations, 2013 CFR

2013-07-01

...-reference control technology. 63.487 Section 63.487 Protection of Environment ENVIRONMENTAL PROTECTION... SOURCE CATEGORIES National Emission Standards for Hazardous Air Pollutant Emissions: Group I Polymers and Resins § 63.487 Batch front-end process vents—reference control technology. (a) Batch front-end process...

40 CFR 63.487 - Batch front-end process vents-reference control technology.

Code of Federal Regulations, 2014 CFR

2014-07-01

...-reference control technology. 63.487 Section 63.487 Protection of Environment ENVIRONMENTAL PROTECTION... SOURCE CATEGORIES National Emission Standards for Hazardous Air Pollutant Emissions: Group I Polymers and Resins § 63.487 Batch front-end process vents—reference control technology. (a) Batch front-end process...

40 CFR 63.491 - Batch front-end process vents-recordkeeping requirements.

Code of Federal Regulations, 2012 CFR

2012-07-01

... CATEGORIES National Emission Standards for Hazardous Air Pollutant Emissions: Group I Polymers and Resins § 63.491 Batch front-end process vents—recordkeeping requirements. (a) Group determination records for...) through (a)(6) of this section for each batch front-end process vent subject to the group determination...

40 CFR 63.491 - Batch front-end process vents-recordkeeping requirements.

Code of Federal Regulations, 2011 CFR

2011-07-01

... CATEGORIES National Emission Standards for Hazardous Air Pollutant Emissions: Group I Polymers and Resins § 63.491 Batch front-end process vents—recordkeeping requirements. (a) Group determination records for...) through (a)(6) of this section for each batch front-end process vent subject to the group determination...

The Parkes front-end controller and noise-adding radiometer

NASA Technical Reports Server (NTRS)

Brunzie, T. J.

1990-01-01

A new front-end controller (FEC) was installed on the 64-m antenna in Parkes, Australia, to support the 1989 Voyager 2 Neptune encounter. The FEC was added to automate operation of the front-end microwave hardware as part of the Deep Space Network's Parkes-Canberra Telemetry Array. Much of the front-end hardware was refurbished and reimplemented from a front-end system installed in 1985 by the European Space Agency for the Uranus encounter; however, the FEC and its associated noise-adding radiometer (NAR) were new Jet Propulsion Laboratory (JPL) designs. Project requirements and other factors led to the development of capabilities not found in standard Deep Space Network (DSN) controllers and radiometers. The Parkes FEC/NAR performed satisfactorily throughout the Neptune encounter and was removed in October 1989.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov, A. E., E-mail: bolotnik@bnl.gov; Ackley, K.; Camarda, G. S.

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm{sup 3} detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We presentmore » the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm 3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readoutmore » electronics. The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

Proof of concept of an imaging system demonstrator for PET applications with SiPM

NASA Astrophysics Data System (ADS)

Morrocchi, Matteo; Marcatili, Sara; Belcari, Nicola; Giuseppina Bisogni, Maria; Collazuol, Gianmaria; Ambrosi, Giovanni; Santoni, Cristiano; Corsi, Francesco; Foresta, Maurizio; Marzocca, Cristoforo; Matarrese, Gianvito; Sportelli, Giancarlo; Guerra, Pedro; Santos, Andres; Del Guerra, Alberto

2013-08-01

A PET imaging system demonstrator based on LYSO crystal arrays coupled to SiPM matrices is under construction at the University and INFN of Pisa. Two SiPM matrices, composed of 8×8 SiPM pixels, and 1,5 mm pitch, have been coupled one to one to a LYSO crystals array and read out by a custom electronics system. front-end ASICs were used to read 8 channels of each matrix. Data from each front-end were multiplexed and sent to a DAQ board for the digital conversion; a motherboard collects the data and communicates with a host computer through a USB port for the storage and off-line data processing. In this paper we show the first preliminary tomographic image of a point-like radioactive source acquired with part of the two detection heads in time coincidence.

Development of FEB Test Platform for ATLAS New Small Wheel Upgrade

NASA Astrophysics Data System (ADS)

Lu, Houbing; Hu, Kun; Wang, Xu; Li, Feng; Han, Liang; Jin, Ge

2016-10-01

This concept of test platform is based on the test requirements of the front-end board (FEB) which is developed for the phase I upgrade of the small Thin Gap Chamber(sTGC) detector on New Small Wheel(NSW) of ATLAS. The front-end electronics system of sTGC consists of 1,536 FEBs with about 322,000 readout of strips, wires and pads in total. A test platform for FEB with up to 256 channels has been designed to keep the testing efficiency at a controllable level. We present the circuit model architecture of the platform, and its functions and implementation as well. The firmware based on Field Programmable Gate Array (FPGA) and the software based on PC have been developed, and basic test methods have been established. FEB readout measurements have been performed in analog injection from the test platform, which will provide a fast and efficient test method for the production of FEB.

George E. Pake Prize Lecture: CMOS Technology Roadmap: Is Scaling Ending?

NASA Astrophysics Data System (ADS)

Chen, Tze-Chiang (T. C.)

The development of silicon technology has been based on the principle of physics and driven by the system needs. Traditionally, the system needs have been satisfied by the increase in transistor density and performance, as suggested by Moore's Law and guided by ''Dennard CMOS scaling theory''. As the silicon industry moves towards the 14nm node and beyond, three of the most important challenges facing Moore's Law and continued CMOS scaling are the growing standby power dissipation, the increasing variability in device characteristics and the ever increasing manufacturing cost. Actually, the first two factors are the embodiments of CMOS approaching atomistic and quantum-mechanical physics boundaries. Industry directions for addressing these challenges are also developing along three primary approaches: Extending silicon scaling through innovations in materials and device structure, expanding the level of integration through three-dimensional structures comprised of through-silicon-vias holes and chip stacking in order to enhance functionality and parallelism and exploring post-silicon CMOS innovation with new nano-devices based on distinctly different principles of physics, new materials and new processes such as spintronics, carbon nanotubes and nanowires. Hence, the infusion of new materials, innovative integration and novel device structures will continue to extend CMOS technology scaling for at least another decade.

A comprehensive model on field-effect pnpn devices (Z2-FET)

NASA Astrophysics Data System (ADS)

Taur, Yuan; Lacord, Joris; Parihar, Mukta Singh; Wan, Jing; Martinie, Sebastien; Lee, Kyunghwa; Bawedin, Maryline; Barbe, Jean-Charles; Cristoloveanu, Sorin

2017-08-01

A comprehensive model for field-effect pnpn devices (Z2-FET) is presented. It is based on three current continuity equations coupled to two MOS equations. The model reproduces the characteristic S-shaped I-V curve when the device is driven by a current source. The negative resistance region at intermediate currents occurs as the center junction undergoes a steep transition from reverse to forward bias. Also playing a vital role are the mix and match of the minority carrier diffusion current and the generation recombination current. Physical insights to the key mechanisms at work are gained by regional approximations of the model, from which analytical expressions for the maximum and minimum voltages at the switching points are derived. From 1981 to 2001, he was with the Silicon Technology Department of IBM Thomas J. Watson Research Center, Yorktown Heights, New York, where he was Manager of Exploratory Devices and Processes. Areas in which he has worked and published include latchup-free 1-um CMOS, self-aligned TiSi2, 0.5-um CMOS and BiCMOS, shallow trench isolation, 0.25-um CMOS with n+/p + poly gates, SOI, low-temperature CMOS, and 0.1-um CMOS. Since October 2001, he has been a professor in the Department of Electrical and Computer Engineering, University of California, San Diego. Dr. Yuan Taur was elected a Fellow of the IEEE in 1998. He has served as Editor-in-Chief of the IEEE Electron Device Letters from 1999 to 2011. He authored or co-authored over 200 technical papers and holds 14 U.S. patents. He co-authored a book, ;Fundamentals of Modern VLSI Devices,; published by Cambridge University Press in 1998. The 2nd edition was published in 2009. Dr. Yuan Taur received IEEE Electron Devices Society's J. J. Ebers Award in 2012 ;for contributions to the advancement of several generations of CMOS process technologies.;

CMOS-APS Detectors for Solar Physics: Lessons Learned during the SWAP Preflight Calibration

NASA Astrophysics Data System (ADS)

de Groof, A.; Berghmans, D.; Nicula, B.; Halain, J.-P.; Defise, J.-M.; Thibert, T.; Schühle, U.

2008-05-01

CMOS-APS imaging detectors open new opportunities for remote sensing in solar physics beyond what classical CCDs can provide, offering far less power consumption, simpler electronics, better radiation hardness, and the possibility of avoiding a mechanical shutter. The SWAP telescope onboard the PROBA2 technology demonstration satellite of the European Space Agency will be the first actual implementation of a CMOS-APS detector for solar physics in orbit. One of the goals of the SWAP project is precisely to acquire experience with the CMOS-APS technology in a real-live space science context. Such a precursor mission is essential in the preparation of missions such as Solar Orbiter where the extra CMOS-APS functionalities will be hard requirements. The current paper concentrates on specific CMOS-APS issues that were identified during the SWAP preflight calibration measurements. We will discuss the different readout possibilities that the CMOS-APS detector of SWAP provides and their associated pros and cons. In particular we describe the “image lag” effect, which results in a contamination of each image with a remnant of the previous image. We have characterised this effect for the specific SWAP implementation and we conclude with a strategy on how to successfully circumvent the problem and actually take benefit of it for solar monitoring.

On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Man Fung, King; Gaier, Todd; Huang, Daquan; Larocca, Tim; Chang, M. F.; Campbell, Richard; Andrews, Michael

2008-01-01

The world s first silicon-based complementary metal oxide/semiconductor (CMOS) integrated-circuit voltage-controlled oscillator (VCO) operating in a frequency range around 324 GHz has been built and tested. Concomitantly, equipment for measuring the performance of this oscillator has been built and tested. These accomplishments are intermediate steps in a continuing effort to develop low-power-consumption, low-phase-noise, electronically tunable signal generators as local oscillators for heterodyne receivers in submillimeter-wavelength (frequency > 300 GHz) scientific instruments and imaging systems. Submillimeter-wavelength imaging systems are of special interest for military and law-enforcement use because they could, potentially, be used to detect weapons hidden behind clothing and other opaque dielectric materials. In comparison with prior submillimeter- wavelength signal generators, CMOS VCOs offer significant potential advantages, including great reductions in power consumption, mass, size, and complexity. In addition, there is potential for on-chip integration of CMOS VCOs with other CMOS integrated circuitry, including phase-lock loops, analog- to-digital converters, and advanced microprocessors.

How small can MOSFETs get?

NASA Astrophysics Data System (ADS)

Risch, Lothar

2001-10-01

Scaling of CMOS technology made possible the key appliances of our information technology society, like the PC, mobile communication, and the internet. Reduction of feature sizes for semiconductor devices continued according to Moore's law for the last 25 years in order to achieve higher integration densities, higher speed, lower power consumption, and lower costs. But now, as we approach the sub 100 nm regime, several roadblocks have been predicted for the next generations down to 35 nm. The latest ITRS roadmap 99 describes in detail the challenges which have to be addressed for the future CMOS technology nodes, regarding lithography, metallization, power dissipation, and circuit design. Also for the MOSFET, performance degradation is a big issue. Because this is not a limitation from basic physical laws, novel architectures for MOSFETs will be needed to improve again the electrical characteristics and thus pave the way to much smaller transistors than expected in the past. 25 nm CMOS seems to be feasible using very thin silicon substrates on insulator. Further improvements down to 10 nm are very likely with two gates for the control of the charge carriers. So, it is very likely that CMOS will not end with today's roadmap at 35 nm or even before, but may continue with non bulk devices and fully depleted channels. Finally, tunnelling from source to drain will set an end to the reduction of channel length, which is estimated to be below 5 nm.

An Implantable RFID Sensor Tag toward Continuous Glucose Monitoring.

PubMed

Xiao, Zhibin; Tan, Xi; Chen, Xianliang; Chen, Sizheng; Zhang, Zijian; Zhang, Hualei; Wang, Junyu; Huang, Yue; Zhang, Peng; Zheng, Lirong; Min, Hao

2015-05-01

This paper presents a wirelessly powered implantable electrochemical sensor tag for continuous blood glucose monitoring. The system is remotely powered by a 13.56-MHz inductive link and utilizes an ISO 15693 radio frequency identification (RFID) standard for communication. This paper provides reliable and accurate measurement for changing glucose level. The sensor tag employs a long-term glucose sensor, a winding ferrite antenna, an RFID front-end, a potentiostat, a 10-bit sigma-delta analog to digital converter, an on-chip temperature sensor, and a digital baseband for protocol processing and control. A high-frequency external reader is used to power, command, and configure the sensor tag. The only off-chip support circuitry required is a tuned antenna and a glucose microsensor. The integrated chip fabricated in SMIC 0.13-μm CMOS process occupies an area of 1.2 mm ×2 mm and consumes 50 μW. The power sensitivity of the whole system is -4 dBm. The sensor tag achieves a measured glucose range of 0-30 mM with a sensitivity of 0.75 nA/mM.

Toward a reduced-wire readout system for ultrasound imaging.

PubMed

Lim, Jaemyung; Arkan, Evren F; Degertekin, F Levent; Ghovanloo, Maysam

2014-01-01

We present a system-on-a-chip (SoC) for use in high-frequency capacitive micromachined ultrasonic transducer (CMUT) imaging systems. This SoC consists of trans-impedance amplifiers (TIA), delay locked loop (DLL) based clock multiplier, quadrature sampler, and pulse width modulator (PWM). The SoC down converts RF echo signal to baseband by quadrature sampling which facilitates modulation. To send data through a 1.6 m wire in the catheter which has limited bandwidth and is vulnerable to noise, the SoC creates a pseudo-digital PWM signal which can be used for back telemetry or wireless readout of the RF data. In this implementation, using a 0.35-μm std. CMOS process, the TIA and single-to-differential (STD) converter had 45 MHz bandwidth, the quadrature sampler had 10.1 dB conversion gain, and the PWM had 5-bit ENoB. Preliminary results verified front-end functionality, and the power consumption of a TIA, STD, quadrature sampler, PWM, and clock multiplier was 26 mW from a 3 V supply.

A high SFDR 6-bit 20-MS/s SAR ADC based on time-domain comparator

NASA Astrophysics Data System (ADS)

Xue, Han; Hua, Fan; Qi, Wei; Huazhong, Yang

2013-08-01

This paper presents a 6-bit 20-MS/s high spurious-free dynamic range (SFDR) and low power successive approximation register analog to digital converter (SAR ADC) for the radio-frequency (RF) transceiver front-end, especially for wireless sensor network (WSN) applications. This ADC adopts the modified common-centroid symmetry layout and the successive approximation register reset circuit to improve the linearity and dynamic range. Prototyped in a 0.18-μm 1P6M CMOS technology, the ADC performs a peak SFDR of 55.32 dB and effective number of bits (ENOB) of 5.1 bit for 10 MS/s. At the sample rate of 20 MS/s and the Nyquist input frequency, the 47.39-dB SFDR and 4.6-ENOB are achieved. The differential nonlinearity (DNL) is less than 0.83 LSB and the integral nonlinearity (INL) is less than 0.82 LSB. The experimental results indicate that this SAR ADC consumes a total of 522 μW power and occupies 0.98 mm2.

Planar MEMS bio-chip for recording ion-channel currents in biological cells

NASA Astrophysics Data System (ADS)

Pandey, Santosh; Ferdous, Zannatul; White, Marvin H.

2003-10-01

We describe a planar MEMS silicon structure to record ion-channel currents in biological cells. The conventional method of performing an electrophysiological experiment, 'patch-clamping,' employs a glass micropipette. Despite careful treatments of the micropipette tip, such as fire polishing and surface coating, the latter is a source of thermal noise because of its inherent, tapered, conical structure, which gives rise to a large pipette resistance. This pipette resistance, when coupled with the self-capacitance of the biological cell, limits the available bandwidth and processing of fast transient, ion channel current pulses. In this work, we reduce considerably the pipette resistance with a planar micropipette on a silicon chip to permit the resolution of sub-millisecond, ion-channel pulses. We discuss the design topology of the device, describe the fabrication sequence, and highlight important critical issues. The design of an integrated on-chip CMOS instrumentation amplifier is described, which has a low-noise front-end, input-offset cancellation, correlated double sampling (CDS), and an ultra-high gain in the order of 1012V/A.

Toward a Reduced-Wire Readout System for Ultrasound Imaging

PubMed Central

Lim, Jaemyung; Arkan, Evren F.; Degertekin, F. Levent; Ghovanloo, Maysam

2015-01-01

We present a system-on-a-chip (SoC) for use in high-frequency capacitive micromachined ultrasonic transducer (CMUT) imaging systems. This SoC consists of trans-impedance amplifiers (TIA), delay locked loop (DLL) based clock multiplier, quadrature sampler, and pulse width modulator (PWM). The SoC down converts RF echo signal to baseband by quadrature sampling which facilitates modulation. To send data through a 1.6 m wire in the catheter which has limited bandwidth and is vulnerable to noise, the SoC creates a pseudo-digital PWM signal which can be used for back telemetry or wireless readout of the RF data. In this implementation, using a 0.35-μm std. CMOS process, the TIA and single-to-differential (STD) converter had 45 MHz bandwidth, the quadrature sampler had 10.1 dB conversion gain, and the PWM had 5-bit ENoB. Preliminary results verified front-end functionality, and the power consumption of a TIA, STD, quadrature sampler, PWM, and clock multiplier was 26 mW from a 3 V supply. PMID:25571135

Towards an implantable bio-sensor platform for continuous real-time monitoring of anti-epileptic drugs.

PubMed

Hammoud, Abbas; Chamseddine, Ahmad; Nguyen, Dang K; Sawan, Mohamad

2016-08-01

The need of continuous real-time monitoring device for in-vivo drug level detection has been widely articulated lately. Such monitoring could guide drug posology and timing of intake, detect low or high drug levels, in order to take adequate measures, and give clinicians a valuable window into patients' health and their response to therapeutics. This paper presents a novel implantable bio-sensor based on impedance measurement capable of continuously monitoring various antiepileptic drug levels. This portable point-of-care microsystem replaces large and stationary conventional macrosystems, and is a one of a kind system designed with an array of electrodes to monitor various anti-epileptic drugs rather than one drug. The micro-system consists of (i) the front-end circuit including an inductive coil to receive energy from an external base station, and to exchange data with the latter; (ii) the power management block; (iii) the readout and control block; and (iv) the biosensor array. The electrical circuitry was designed using the 0.18-um CMOS process technology intended to be miniature and consume ultra-low power.

Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

NASA Astrophysics Data System (ADS)

Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

2017-02-01

In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

Towards Gotthard-II: development of a silicon microstrip detector for the European X-ray Free-Electron Laser

NASA Astrophysics Data System (ADS)

Zhang, J.; Andrä, M.; Barten, R.; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Redford, S.; Ruat, M.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Turcato, M.; Vetter, S.

2018-01-01

Gotthard-II is a 1-D microstrip detector specifically developed for the European X-ray Free-Electron Laser. It will not only be used in energy dispersive experiments but also as a beam diagnostic tool with additional logic to generate veto signals for the other 2-D detectors. Gotthard-II makes use of a silicon microstrip sensor with a pitch of either 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to adaptive gain switching readout chips. Built-in analog-to-digital converters and digital memories will be implemented in the readout chip for a continuous conversion and storage of frames for all bunches in the bunch train. The performance of analogue front-end prototypes of Gotthard has been investigated in this work. The results in terms of noise, conversion gain, dynamic range, obtained by means of infrared laser and X-rays, will be shown. In particular, the effects of the strip-to-strip coupling are studied in detail and it is found that the reduction of the coupling effects is one of the key factors for the development of the analogue front-end of Gotthard-II.

A non-contact capacitance based electrocardiograph and associated heart-rate detection using enhanced Fourier interpolation method.

PubMed

Kumar Thakur, Rupak; Anoop, C S

2015-08-01

Cardio-vascular health monitoring has gained considerable attention in the recent years. Principle of non-contact capacitive electrocardiograph (ECG) and its applicability as a valuable, low-cost, easy-to-use scheme for cardio-vascular health monitoring has been demonstrated in some recent research papers. In this paper, we develop a complete non-contact ECG system using a suitable front-end electronic circuit and a heart-rate (HR) measurement unit using enhanced Fourier interpolation technique. The front-end electronic circuit is realized using low-cost, readily available components and the proposed HR measurement unit is designed to achieve fairly accurate results. The entire system has been extensively tested to verify its efficacy and test results show that the developed system can estimate HR with an accuracy of ±2 beats. Detailed tests have been conducted to validate the performance of the system for different cloth thicknesses of the subject. Some basic tests which illustrate the application of the proposed system for heart-rate variability estimation has been conducted and results reported. The developed system can be used as a portable, reliable, long-term cardiac health monitoring device and can be extended to human drowsiness detection.

Parameter Extraction Method for the Electrical Model of a Silicon Photomultiplier

NASA Astrophysics Data System (ADS)

Licciulli, Francesco; Marzocca, Cristoforo

2016-10-01

The availability of an effective electrical model, able to accurately reproduce the signals generated by a Silicon Photo-Multiplier coupled to the front-end electronics, is mandatory when the performance of a detection system based on this kind of detector has to be evaluated by means of reliable simulations. We propose a complete extraction procedure able to provide the whole set of the parameters involved in a well-known model of the detector, which includes the substrate ohmic resistance. The technique allows achieving very good quality of the fit between simulation results provided by the model and experimental data, thanks to accurate discrimination between the quenching and substrate resistances, which results in a realistic set of extracted parameters. The extraction procedure has been applied to a commercial device considering a wide range of different conditions in terms of input resistance of the front-end electronics and interconnection parasitics. In all the considered situations, very good correspondence has been found between simulations and measurements, especially for what concerns the leading edge of the current pulses generated by the detector, which strongly affects the timing performance of the detection system, thus confirming the effectiveness of the model and the associated parameter extraction technique.

Verification of the Sentinel-4 focal plane subsystem

NASA Astrophysics Data System (ADS)

Williges, Christian; Uhlig, Mathias; Hilbert, Stefan; Rossmann, Hannes; Buchwinkler, Kevin; Babben, Steffen; Sebastian, Ilse; Hohn, Rüdiger; Reulke, Ralf

2017-09-01

The Sentinel-4 payload is a multi-spectral camera system, designed to monitor atmospheric conditions over Europe from a geostationary orbit. The German Aerospace Center, DLR Berlin, conducted the verification campaign of the Focal Plane Subsystem (FPS) during the second half of 2016. The FPS consists, of two Focal Plane Assemblies (FPAs), two Front End Electronics (FEEs), one Front End Support Electronic (FSE) and one Instrument Control Unit (ICU). The FPAs are designed for two spectral ranges: UV-VIS (305 nm - 500 nm) and NIR (750 nm - 775 nm). In this publication, we will present in detail the set-up of the verification campaign of the Sentinel-4 Qualification Model (QM). This set up will also be used for the upcoming Flight Model (FM) verification, planned for early 2018. The FPAs have to be operated at 215 K +/- 5 K, making it necessary to exploit a thermal vacuum chamber (TVC) for the test accomplishment. The test campaign consists mainly of radiometric tests. This publication focuses on the challenge to remotely illuminate both Sentinel-4 detectors as well as a reference detector homogeneously over a distance of approximately 1 m from outside the TVC. Selected test analyses and results will be presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Aguayo, Estanislao; Avignone, F. T.

The MAJORANA DEMONSTRATOR will search for the neutrinoless double beta decay (ββ(0ʋ) of the isotope 76Ge with a mixed array of enriched and natural Germanium detectors. In view of the next generation of tonne-scale germanium-based (ββ(0ʋ)-decay searches, a major goal of the MAJORANA DEMONSTRATOR is to demonstrate a path forward to achieving a background rate at or below 1 cnt/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039-keV Q-value of the 76Ge (ββ(0ʋ)-decay. Such a requirement on the background level significantly constrains the design of the readout electronics, which is further driven by noise and energy resolutionmore » performances. We present here the low-noise low background front-end electronics developed for the low-capacitance p-type point contact (P-PC) germanium detectors of the MAJORANA DEMONSTRATOR. This resistive-feedback front-end, specifically designed to have low mass, is fabricated on a radioassayed fused-silica substrate where the feedback resistor consists of a sputtered thin film of high purity amorphous germanium and the feedback capacitor is based on the capacitance between gold conductive traces.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Leon E.; Conrad, Ryan C.; Keller, Daniel T.

The International Atomic Energy Agency (IAEA) deploys unattended monitoring systems to provide continuous monitoring of nuclear material within safeguarded facilities around the world. As the number of unattended monitoring instruments increases, the IAEA is challenged to become more efficient in the implementation of those systems. In 2010, the IAEA initiated the Front-End Electronics for Unattended Measurement (FEUM) project with the goals of greater flexibility in the interfaces to various sensors and data acquisition systems, and improved capabilities for remotely located sensors (e.g., where sensor and front-end electronics might be separated by tens of meters). In consultation with the IAEA, amore » technical evaluation of a candidate FEUM device produced by a commercial vendor is being performed. This evaluation is assessing the device against the IAEA’s original technical specifications and a broad range of important parameters that included sensor types, cable types, and industrial electromagnetic noise that can degrade signals from remotely located detectors. Testing has been performed in a laboratory and also in environments representative of IAEA deployments. The results are expected to inform the IAEA about where and how FEUM devices might be implemented in the field. Data and preliminary findings from the testing performed to date are presented.« less

Trace-transform invariants of tracks of high-velocity jets from the surface of tungsten droplets in the plasma flow

NASA Astrophysics Data System (ADS)

Gulyaev, P.; Jordan, V.; Gulyaev, I.; Dolmatov, A.

2017-05-01

The paper presents the analysis of the recorded tracks of high-velocity emission in the air-argon plasma flow during breaking up of tungsten microdroplets. This new physical effect of optical emission involves two stages. The first one includes thermionic emission of electrons from the surface of the melted tungsten droplet of 100-200 μm size and formation of the charged sphere of 3-5 mm diameter. After it reaches the breakdown electric potential, it collapses and produces a spherical shock wave and luminous radiation. The second stage includes previously unknown physical phenomenon of narrowly directed energy jet with velocity exceeding 4000 m/s from the surface of the tungsten droplet. The luminous spherical collapse and high-velocity jets were recorded using CMOS photo-array operating in a global shutter charge storage mode. Special features of the CMOS array scanning algorithm affect formation of distinctive signs of the recorded tracks, which stay invariant to trace transform (TT) with specific functional. The series of concentric circles were adopted as primitive object models (patterns) used in TT at the spherical collapse stage and linear segment of fixed thickness - at the high-velocity emission stage. The two invariants of the physical object, motion velocity and optical brightness distribution in the motion front, were adopted as desired identification features of tracks. The analytical expressions of the relation of 2D TT parameters and physical object motion invariants were obtained. The equations for spherical collapse stage correspond to Radon-Nikodym transform.

Commissioning of the CMS Hadron Forward Calorimeters Phase I Upgrade

NASA Astrophysics Data System (ADS)

Bilki, B.; Onel, Y.

2018-03-01

The final phase of the CMS Hadron Forward Calorimeters Phase I Upgrade was performed during the Extended Year End Technical Stop of 2016-2017. In the framework of the upgrade, the PMT boxes were reworked to implement two channel readout in order to exploit the benefits of the multi-anode PMTs in background tagging and signal recovery. The front-end electronics were also upgraded to QIE10-based electronics which implement larger dynamic range and a 6-bit TDC. Following this major upgrade, the Hadron Forward Calorimeters were commissioned for operation readiness in 2017. Here we describe the details and the components of the upgrade, and discuss the operational experience and results obtained during the upgrade and commissioning.

Tevatron beam position monitor upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolbers, Stephen; Banerjee, B.; Barker, B.

2005-05-01

The Tevatron Beam Position Monitor (BPM) readout electronics and software have been upgraded to improve measurement precision, functionality and reliability. The original system, designed and built in the early 1980's, became inadequate for current and future operations of the Tevatron. The upgraded system consists of 960 channels of new electronics to process analog signals from 240 BPMs, new front-end software, new online and controls software, and modified applications to take advantage of the improved measurements and support the new functionality. The new system reads signals from both ends of the existing directional stripline pickups to provide simultaneous proton and antiprotonmore » position measurements. Measurements using the new system are presented that demonstrate its improved resolution and overall performance.« less

Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping.

PubMed

Lim, June Yeong; Pezeshki, Atiye; Oh, Sehoon; Kim, Jin Sung; Lee, Young Tack; Yu, Sanghyuck; Hwang, Do Kyung; Lee, Gwan-Hyoung; Choi, Hyoung Joon; Im, Seongil

2017-08-01

Recently, α-MoTe 2 , a 2D transition-metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α-MoTe 2 a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α-MoTe 2 appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge-carrier polarity of MoTe 2 , functional devices such as p-n junction or complementary metal-oxide-semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p-n junction diode in a single α-MoTe 2 nanosheet by a straightforward selective doping technique. In a single α-MoTe 2 flake, an initially p-doped channel is selectively converted to an n-doped region with high electron mobility of 18 cm 2 V -1 s -1 by atomic-layer-deposition-induced H-doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α-MoTe 2 for future electronic devices based on 2D semiconducting materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

PubMed

Heo, Jae Sang; Kim, Taehoon; Ban, Seok-Gyu; Kim, Daesik; Lee, Jun Ho; Jur, Jesse S; Kim, Myung-Gil; Kim, Yong-Hoon; Hong, Yongtaek; Park, Sung Kyu

2017-08-01

The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm 2 V -1 s -1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

NASA Technical Reports Server (NTRS)

Buchner, S.; McMorrow, D.; Sibley, M.; Eaton, P.; Mavis, D.; Dusseau, L.; Roche, N. J-H.; Bernard, M.

2009-01-01

This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

A CMOS enhanced solid-state nanopore based single molecule detection platform.

PubMed

Chen, Chinhsuan; Yemenicioglu, Sukru; Uddin, Ashfaque; Corgliano, Ellie; Theogarajan, Luke

2013-01-01

Solid-state nanopores have emerged as a single molecule label-free electronic detection platform. Existing transimpedance stages used to measure ionic current nanopores suffer from dynamic range limitations resulting from steady-state baseline currents. We propose a digitally-assisted baseline cancellation CMOS platform that circumvents this issue. Since baseline cancellation is a form of auto-zeroing, the 1/f noise of the system is also reduced. Our proposed design can tolerate a steady state baseline current of 10µA and has a usable bandwidth of 750kHz. Quantitative DNA translocation experiments on 5kbp DNA was performed using a 5nm silicon nitride pore using both the CMOS platform and a commercial system. Comparison of event-count histograms show that the CMOS platform clearly outperforms the commercial system, allowing for unambiguous interpretation of the data.

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

NASA Astrophysics Data System (ADS)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

Embedded CMOS basecalling for nanopore DNA sequencing.

PubMed

Chengjie Wang; Junli Zheng; Magierowski, Sebastian; Ghafar-Zadeh, Ebrahim

2016-08-01

DNA sequencing based on nanopore sensors is now entering the marketplace. The ability to interface this technology to established CMOS microelectronics promises significant improvements in functionality and miniaturization. Among the key functions to benefit from this interface will be basecalling, the conversion of raw electronic molecular signatures to nucleotide sequence predictions. This paper presents the design and performance potential of custom CMOS base-callers embedded alongside nanopore sensors. A basecalliing architecture implemented in 32-nm technology is discussed with the ability to process the equivalent of 20 human genomes per day in real-time at a power density of 5 W/cm2 assuming a 3-mer nanopore sensor.

CMOS-compatible photonic devices for single-photon generation

NASA Astrophysics Data System (ADS)

Xiong, Chunle; Bell, Bryn; Eggleton, Benjamin J.

2016-09-01

Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal-oxide-semiconductor (CMOS)-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon) and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

Spectrally tunable, temporally shaped parametric front end to seed high-energy Nd:glass laser systems

DOE PAGES

Dorrer, C.; Consentino, A.; Cuffney, R.; ...

2017-10-18

Here, we describe a parametric-amplification–based front end for seeding high-energy Nd:glass laser systems. The front end delivers up to 200 mJ by parametric amplification in 2.5-ns flat-in-time pulses tunable over more than 15 nm. Spectral tunability over a range larger than what is typically achieved by laser media at similar energy levels is implemented to investigate cross-beam energy transfer in multibeam target experiments. The front-end operation is simulated to explain the amplified signal’s sensitivity to the input pump and signal. A large variety of amplified waveforms are generated by closed-loop pulse shaping. Various properties and limitations of this front endmore » are discussed.« less

Spectrally tunable, temporally shaped parametric front end to seed high-energy Nd:glass laser systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dorrer, C.; Consentino, A.; Cuffney, R.

Here, we describe a parametric-amplification–based front end for seeding high-energy Nd:glass laser systems. The front end delivers up to 200 mJ by parametric amplification in 2.5-ns flat-in-time pulses tunable over more than 15 nm. Spectral tunability over a range larger than what is typically achieved by laser media at similar energy levels is implemented to investigate cross-beam energy transfer in multibeam target experiments. The front-end operation is simulated to explain the amplified signal’s sensitivity to the input pump and signal. A large variety of amplified waveforms are generated by closed-loop pulse shaping. Various properties and limitations of this front endmore » are discussed.« less

Electronics for a prototype variable field of view PET camera using the PMT-quadrant-sharing detector array

NASA Astrophysics Data System (ADS)

Li, H.; Wong, Wai-Hoi; Zhang, N.; Wang, J.; Uribe, J.; Baghaei, H.; Yokoyama, S.

1999-06-01

Electronics for a prototype high-resolution PET camera with eight position-sensitive detector modules has been developed. Each module has 16 BGO (Bi/sub 4/Ge/sub 3/O/sub 12/) blocks (each block is composed of 49 crystals). The design goals are component and space reduction. The electronics is composed of five parts: front-end analog processing, digital position decoding, fast timing, coincidence processing and master data acquisition. The front-end analog circuit is a zone-based structure (each zone has 3/spl times/3 PMTs). Nine ADCs digitize integration signals of an active zone identified by eight trigger clusters; each cluster is composed of six photomultiplier tubes (PMTs). A trigger corresponding to a gamma ray is sent to a fast timing board to obtain a time-mark, and the nine digitized signals are passed to the position decoding board, where a real block (four PMTs) can be picked out from the zone for position decoding. Lookup tables are used for energy discrimination and to identify the gamma-hit crystal location. The coincidence board opens a 70-ns initial timing window, followed by two 20-ns true/accidental time-mark lookup table windows. The data output from the coincidence board can be acquired either in sinogram mode or in list mode with a Motorola/IRONICS VME-based system.

Performance Analysis of Visible Light Communication Using CMOS Sensors.

PubMed

Do, Trong-Hop; Yoo, Myungsik

2016-02-29

This paper elucidates the fundamentals of visible light communication systems that use the rolling shutter mechanism of CMOS sensors. All related information involving different subjects, such as photometry, camera operation, photography and image processing, are studied in tandem to explain the system. Then, the system performance is analyzed with respect to signal quality and data rate. To this end, a measure of signal quality, the signal to interference plus noise ratio (SINR), is formulated. Finally, a simulation is conducted to verify the analysis.

Performance Analysis of Visible Light Communication Using CMOS Sensors

PubMed Central

Do, Trong-Hop; Yoo, Myungsik

2016-01-01

This paper elucidates the fundamentals of visible light communication systems that use the rolling shutter mechanism of CMOS sensors. All related information involving different subjects, such as photometry, camera operation, photography and image processing, are studied in tandem to explain the system. Then, the system performance is analyzed with respect to signal quality and data rate. To this end, a measure of signal quality, the signal to interference plus noise ratio (SINR), is formulated. Finally, a simulation is conducted to verify the analysis. PMID:26938535

Front End Software for Online Database Searching Part 1: Definitions, System Features, and Evaluation.

ERIC Educational Resources Information Center

Hawkins, Donald T.; Levy, Louise R.

1985-01-01

This initial article in series of three discusses barriers inhibiting use of current online retrieval systems by novice users and notes reasons for front end and gateway online retrieval systems. Definitions, front end features, user interface, location (personal computer, host mainframe), evaluation, and strengths and weaknesses are covered. (16…

Single event effect hardness for the front-end ASICs in the DAMPE satellite BGO calorimeter

NASA Astrophysics Data System (ADS)

Gao, Shan-Shan; Jiang, Di; Feng, Chang-Qing; Xi, Kai; Liu, Shu-Bin; An, Qi

2016-01-01

The Dark Matter Particle Explorer (DAMPE) is a Chinese scientific satellite designed for cosmic ray studies with a primary scientific goal of indirect detection of dark matter particles. As a crucial sub-detector, the BGO calorimeter measures the energy spectrum of cosmic rays in the energy range from 5 GeV to 10 TeV. In order to implement high-density front-end electronics (FEE) with the ability to measure 1848 signals from 616 photomultiplier tubes on the strictly constrained satellite platform, two kinds of 32-channel front-end ASICs, VA160 and VATA160, are customized. However, a space mission period of more than 3 years makes single event effects (SEEs) become threats to reliability. In order to evaluate SEE sensitivities of these chips and verify the effectiveness of mitigation methods, a series of laser-induced and heavy ion-induced SEE tests were performed. Benefiting from the single event latch-up (SEL) protection circuit for power supply, the triple module redundancy (TMR) technology for the configuration registers and the optimized sequential design for the data acquisition process, 52 VA160 chips and 32 VATA160 chips have been applied in the flight model of the BGO calorimeter with radiation hardness assurance. Supported by Strategic Priority Research Program on Space Science of the Chinese Academy of Sciences (XDA04040202-4) and Fundamental Research Funds for the Central Universities (WK2030040048)

A research on radiation calibration of high dynamic range based on the dual channel CMOS

NASA Astrophysics Data System (ADS)

Ma, Kai; Shi, Zhan; Pan, Xiaodong; Wang, Yongsheng; Wang, Jianghua

2017-10-01

The dual channel complementary metal-oxide semiconductor (CMOS) can get high dynamic range (HDR) image through extending the gray level of the image by using image fusion with high gain channel image and low gain channel image in a same frame. In the process of image fusion with dual channel, it adopts the coefficients of radiation response of a pixel from dual channel in a same frame, and then calculates the gray level of the pixel in the HDR image. For the coefficients of radiation response play a crucial role in image fusion, it has to find an effective method to acquire these parameters. In this article, it makes a research on radiation calibration of high dynamic range based on the dual channel CMOS, and designs an experiment to calibrate the coefficients of radiation response for the sensor it used. In the end, it applies these response parameters in the dual channel CMOS which calibrates, and verifies the correctness and feasibility of the method mentioned in this paper.

Multiphysical FE-analysis of a front-end bending phenomenon in a hot strip mill

NASA Astrophysics Data System (ADS)

Ilmola, Joonas; Seppälä, Oskari; Leinonen, Olli; Pohjonen, Aarne; Larkiola, Jari; Jokisaari, Juha; Putaansuu, Eero

2018-05-01

In hot steel rolling processes, a slab is generally rolled to a transfer bar in a roughing process and to a strip in a hot strip rolling process. Over several rolling passes the front-end may bend upward or downward due to asymmetrical rolling conditions causing entry problems in the next rolling pass. Many different factors may affect the front-end bending phenomenon and are very challenging to measure. Thus, a customized finite element model is designed and built to simulate the front-end bending phenomenon in a hot strip rolling process. To simulate the functioning of the hot strip mill precisely, automated controlling logic of the mill must be considered. In this paper we studied the effect of roll bite friction conditions and amount of reduction on the front-end bending phenomenon in a hot strip rolling process.

Electronic readout system for the Belle II imaging Time-Of-Propagation detector

NASA Astrophysics Data System (ADS)

Kotchetkov, Dmitri

2017-07-01

The imaging Time-Of-Propagation (iTOP) detector, constructed for the Belle II experiment at the SuperKEKB e+e- collider, is an 8192-channel high precision Cherenkov particle identification detector with timing resolution below 50 ps. To acquire data from the iTOP, a novel front-end electronic readout system was designed, built, and integrated. Switched-capacitor array application-specific integrated circuits are used to sample analog signals. Triggering, digitization, readout, and data transfer are controlled by Xilinx Zynq-7000 system on a chip devices.

Gain drift compensation with no-feedback-loop developed for the X-IFU/ATHENA readout chain

NASA Astrophysics Data System (ADS)

Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Goldwurm, A.

2016-07-01

The focal plane of the X-ray Integral Field Unit (X-IFU) instrument of the Athena observatory is composed of about 4000 micro-calorimeters. These sensors, based on superconducting Transition Edge Sensors, are read out through a frequency multiplexer and a base-band feedback to linearize SQUIDs. However, the loop gain of this feedback is lower than 10 in the modulated TES signal bandwidth, which is not enough to fix the gain of the full readout chain. Calibration of the instrument is planned to be done at a time scale larger than a dozen minutes and the challenging energy resolution goal of 2.5 eV at 6 keV will probably require a gain stability larger than 10-4 over a long duration. A large part of this gain is provided by a Low-Noise Amplifier (LNA) in the Warm Front-End Electronics (WFEE). To reach such gain stability over more than a dozen minutes, this non-cooled amplifier has to cope with the temperature and supply voltage variations. Moreover, mainly for noise reasons, common large loop gain with feedback can not be used. We propose a new amplifier topology using diodes as loads of a differential amplifier to provide a fixed voltage gain, independent of the temperature and of the bias fluctuations. This amplifier is designed using a 350 nm SiGe BiCMOS technology and is part of an integrated circuit developed for the WFEE. Our simulations provide the expected gain drift and noise performances of such structure. Comparison with standard resistive loaded differential pair clearly shows the advantages of the proposed amplifier topology with a gain drift decreasing by more than an order of magnitude. Performances of this diode loaded amplifier are discussed in the context of the X-IFU requirements.

NASA Tech Briefs, July 2012

NASA Technical Reports Server (NTRS)

2012-01-01

Topics covered include: Instrument Suite for Vertical Characterization of the Ionosphere-Thermosphere System; Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure; Pattern Recognition Algorithm for High-Sensitivity Odorant Detection in Unknown Environments; Determining Performance Acceptability of Electrochemical Oxygen Sensors; Versatile Controller for Infrared Lamp and Heater Arrays; High-Speed Scanning Interferometer Using CMOS Image Sensor and FPGA Based on Multifrequency Phase-Tracking Detection; Ultra-Low-Power MEMS Selective Gas Sensors; Compact Receiver Front Ends for Submillimeter-Wave Applications; Dynamically Reconfigurable Systolic Array Accelerator; Blocking Losses With a Photon Counter; Motion-Capture-Enabled Software for Gestural Control of 3D Mod; Orbit Software Suite; CoNNeCT Baseband Processor Module Boot Code SoftWare (BCSW); Trajectory Software With Upper Atmosphere Model; ALSSAT Version 6.0; Employing a Grinding Technology to Assess the Microbial Density for Encapsulated Organisms; Demonstration of Minimally Machined Honeycomb Silicon Carbide Mirrors; Polyimide Aerogel Thin Films; Nanoengineered Thermal Materials Based on Carbon Nanotube Array Composites; Composite Laminate With Coefficient of Thermal Expansion Matching D263 Glass; Robust Tensioned Kevlar Suspension Design; Focal Plane Alignment Utilizing Optical CMM; Purifying, Separating, and Concentrating Cells From a Sample Low in Biomass; Virtual Ultrasound Guidance for Inexperienced Operators; Beat-to-Beat Blood Pressure Monitor; Non-Contact Conductivity Measurement for Automated Sample Processing Systems; An MSK Radar Waveform; Telescope Alignment From Sparsely Sampled Wavefront Measurements Over Pupil Subapertures; Method to Remove Particulate Matter from Dusty Gases at Low Pressures; Terahertz Quantum Cascade Laser With Efficient Coupling and Beam Profile; Measurement Via Optical Near-Nulling and Subaperture Stitching; 885-nm Pumped Ceramic Nd:YAG Master Oscillator Power Amplifier Laser System; Airborne Hyperspectral Imaging System; Heat Shield Employing Cured Thermal Protection Material Blocks Bonded in a Large-Cell Honeycomb Matrix; and Asymmetric Supercapacitor for Long-Duration Power Storage.

A MAPS Based Micro-Vertex Detector for the STAR Experiment

DOE PAGES

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; ...

2015-06-18

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

VLBI2010 Receiver Back End Comparison

NASA Technical Reports Server (NTRS)

Petrachenko, Bill

2013-01-01

VLBI2010 requires a receiver back-end to convert analog RF signals from the receiver front end into channelized digital data streams to be recorded or transmitted electronically. The back end functions are typically performed in two steps: conversion of analog RF inputs into IF bands (see Table 2), and conversion of IF bands into channelized digital data streams (see Tables 1a, 1b and 1c). The latter IF systems are now completely digital and generically referred to as digital back ends (DBEs). In Table 2 two RF conversion systems are compared, and in Tables 1a, 1b, and 1c nine DBE systems are compared. Since DBE designs are advancing rapidly, the data in these tables are only guaranteed to be current near the update date of this document.

Capacitance pressure sensor

DOEpatents

Eaton, William P.; Staple, Bevan D.; Smith, James H.

2000-01-01

A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).

Design and fabrication of reflective spatial light modulator for high-dynamic-range wavefront control

NASA Astrophysics Data System (ADS)

Zhu, Hao; Bierden, Paul; Cornelissen, Steven; Bifano, Thomas; Kim, Jin-Hong

2004-10-01

This paper describes design and fabrication of a microelectromechanical metal spatial light modulator (SLM) integrated with complementary metal-oxide semiconductor (CMOS) electronics, for high-dynamic-range wavefront control. The metal SLM consists of a large array of piston-motion MEMS mirror segments (pixels) which can deflect up to 0.78 µm each. Both 32x32 and 150x150 arrays of the actuators (1024 and 22500 elements respectively) were fabricated onto the CMOS driver electronics and individual pixels were addressed. A new process has been developed to reduce the topography during the metal MEMS processing to fabricate mirror pixels with improved optical quality.

Ultra Low Energy Binary Decision Diagram Circuits Using Few Electron Transistors

NASA Astrophysics Data System (ADS)

Saripalli, Vinay; Narayanan, Vijay; Datta, Suman

Novel medical applications involving embedded sensors, require ultra low energy dissipation with low-to-moderate performance (10kHz-100MHz) driving the conventional MOSFETs into sub-threshold operation regime. In this paper, we present an alternate ultra-low power computing architecture using Binary Decision Diagram based logic circuits implemented using Single Electron Transistors (SETs) operating in the Coulomb blockade regime with very low supply voltages. We evaluate the energy - performance tradeoff metrics of such BDD circuits using time domain Monte Carlo simulations and compare them with the energy-optimized CMOS logic circuits. Simulation results show that the proposed approach achieves better energy-delay characteristics than CMOS realizations.

An easily accessible carbon material derived from carbonization of polyacrylonitrile ultrathin films: ambipolar transport properties and application in a CMOS-like inverter.

PubMed

Jiao, Fei; Zhang, Fengjiao; Zang, Yaping; Zou, Ye; Di, Chong'an; Xu, Wei; Zhu, Daoben

2014-03-04

Ultrathin carbon films were prepared by carbonization of a solution processed polyacrylonitrile (PAN) film in a moderate temperature range (500-700 °C). The films displayed balanced hole (0.50 cm(2) V(-1) s(-1)) and electron mobilities (0.20 cm(2) V(-1) s(-1)) under ambient conditions. Spectral characterization revealed that the electrical transport is due to the formation of sp(2) hybridized carbon during the carbonization process. A CMOS-like inverter demonstrated the potential application of this material in the area of carbon electronics, considering its processability and low-cost.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing

NASA Astrophysics Data System (ADS)

De Matteis, M.; De Blasi, M.; Vallicelli, E. A.; Zannoni, M.; Gervasi, M.; Bau, A.; Passerini, A.; Baschirotto, A.

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μ m technology (12 mm2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing.

PubMed

De Matteis, M; De Blasi, M; Vallicelli, E A; Zannoni, M; Gervasi, M; Bau, A; Passerini, A; Baschirotto, A

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μm technology (12 mm 2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

Qualification and Reliability for MEMS and IC Packages

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2004-01-01

Advanced IC electronic packages are moving toward miniaturization from two key different approaches, front and back-end processes, each with their own challenges. Successful use of more of the back-end process front-end, e.g. microelectromechanical systems (MEMS) Wafer Level Package (WLP), enable reducing size and cost. Use of direct flip chip die is the most efficient approach if and when the issues of know good die and board/assembly are resolved. Wafer level package solve the issue of known good die by enabling package test, but it has its own limitation, e.g., the I/O limitation, additional cost, and reliability. From the back-end approach, system-in-a-package (SIAP/SIP) development is a response to an increasing demand for package and die integration of different functions into one unit to reduce size and cost and improve functionality. MEMS add another challenging dimension to electronic packaging since they include moving mechanical elements. Conventional qualification and reliability need to be modified and expanded in most cases in order to detect new unknown failures. This paper will review four standards that already released or being developed that specifically address the issues on qualification and reliability of assembled packages. Exposures to thermal cycles, monotonic bend test, mechanical shock and drop are covered in these specifications. Finally, mechanical and thermal cycle qualification data generated for MEMS accelerometer will be presented. The MEMS was an element of an inertial measurement unit (IMU) qualified for NASA Mars Exploration Rovers (MERs), Spirit and Opportunity that successfully is currently roaring the Martian surface

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

PubMed Central

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-01-01

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively. PMID:27792131

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose.

PubMed

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-10-25

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal-oxide-semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm². The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

An 8.4-GHz dual-maser front-end system for Parkes reimplementation

NASA Technical Reports Server (NTRS)

Trowbridge, D. L.; Loreman, J. R.; Brunzie, T. J.; Quinn, R.

1990-01-01

An 8.4-GHz front-end system consisting of a feedhorn, a waveguide feed assembly, dual masers, and downconverters was reimplemented at Parkes as part of the Parkes Canberra Telemetry Array for the Voyager Neptune encounter. The front-end system was originally assembled by the European Space Agency and installed on the Parkes antenna for the Giotto project. It was also used on a time-sharing basis by the Deep Space Network as part of the Parkes Canberra Telemetry Array to enhance the data return from the Voyager Uranus encounter. At the conclusion of these projects in 1986, part of the system was then shipped to JPL on loan for reimplementation at Parkes for the Voyager Neptune encounter. New design and implementation required to make the system operable at Parkes included new microwave front-end control cabinets, closed-cycle refrigeration monitor system, noise-adding radiometer system, front-end controller assembly, X81 local oscillator multiplier, and refurbishment of the original dual 8.4-GHz traveling-wave masers and waveguide feed system. The front-end system met all requirements during the encounter and was disassembled in October 1989 and returned to JPL.

Electron lithography STAR design guidelines. Part 3: The mosaic transistor array applied to custom microprocessors. Part 4: Stores logic arrays, SLAs implemented with clocked CMOS

NASA Technical Reports Server (NTRS)

Trotter, J. D.

1982-01-01

The Mosaic Transistor Array is an extension of the STAR system developed by NASA which has dedicated field cells designed to be specifically used in semicustom microprocessor applications. The Sandia radiation hard bulk CMOS process is utilized in order to satisfy the requirements of space flights. A design philosophy is developed which utilizes the strengths and recognizes the weaknesses of the Sandia process. A style of circuitry is developed which incorporates the low power and high drive capability of CMOS. In addition the density achieved is better than that for classic CMOS, although not as good as for NMOS. The basic logic functions for a data path are designed with compatible interface to the STAR grid system. In this manner either random logic or PLA type structures can be utilized for the control logic.