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Sample records for cmos low-noise amplifier

  1. A CMOS Sub-GHz Wideband Low-Noise Amplifier for Digital TV Tuner Applications

    NASA Astrophysics Data System (ADS)

    Cha, Hyouk-Kyu

    A high performance highly integrated sub-GHz wideband differential low-noise amplifier (LNA) for terrestrial and cable digital TV tuner applications is realized in 0.18µm CMOS technology. A noise-canceling topology using a feed-forward current reuse common-source stage is presented to obtain low noise characteristics and high gain while achieving good wideband input matching within 48-860MHz. In addition, linearization methods are appropriately utilized to improve the linearity. The implemented LNA achieves a power gain of 20.9dB, a minimum noise figure of 2.8dB, and an OIP3 of 24.2dBm. The chip consumes 32mA of current at 1.8V power supply and the core die size is 0.21mm2.

  2. Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

    NASA Astrophysics Data System (ADS)

    Becerra-Alvarez, Edwin C.; Sandoval-Ibarra, Federico; de la Rosa, José M.

    2009-05-01

    This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF<2.8dB, S21>13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.

  3. A 0.5V Area-Efficient Transformer Folded-Cascode CMOS Low-Noise Amplifier

    NASA Astrophysics Data System (ADS)

    Kihara, Takao; Park, Hae-Ju; Takobe, Isao; Yamashita, Fumiaki; Matsuoka, Toshimasa; Taniguchi, Kenji

    A 0.5V transformer folded-cascode CMOS low-noise amplifier (LNA) is presented. The chip area of the LNA was reduced by coupling the internal inductor with the load inductor, and the effects of the magnetic coupling between these inductors were analyzed. The magnetic coupling reduces the resonance frequency of the input matching network, the peak frequency and magnitude of the gain, and the noise contributions from the common-gate stage to the LNA. A partially-coupled transformer with low magnetic coupling has a small effect on the LNA performance. The LNA with this transformer, fabricated in a 90nm digital CMOS process, achieved an S11 of -14dB, NF of 3.9dB, and voltage gain of 16.8dB at 4.7GHz with a power consumption of 1.0mW at a 0.5V supply. The chip area of the proposed LNA was 25% smaller than that of the conventional folded-cascode LNA.

  4. Low-noise amplifiers for satellite communications

    NASA Astrophysics Data System (ADS)

    Whelehan, J.

    1984-02-01

    It is pointed out that over the past several years significant advances have been made in the overall capability of both microwave and mm-wave receivers. This is particularly apparent in the telecom market. Integral parts of advanced receiver technology are low-noise receivers. The advances currently being achieved in low-noise technology are partly based on developments in GaAs semiconductor technology. The development of high-cutoff-frequency beam lead mixer diodes has led to the development of mm-wave low-noise mixers with excellent low-noise capability. The advanced techniques are now being employed in field-deployable systems. Low noise is an important factor in satellite communications applications. Attention is given to C-band fixed satellite service, C-band parametric amplifiers, C-band FET, and X band, the Ku band, and the 30/20 GHz band.

  5. Ku band low noise parametric amplifier

    NASA Technical Reports Server (NTRS)

    1976-01-01

    A low noise, K sub u-band, parametric amplifier (paramp) was developed. The unit is a spacecraft-qualifiable, prototype, parametric amplifier for eventual application in the shuttle orbiter. The amplifier was required to have a noise temperature of less than 150 K. A noise temperature of less than 120 K at a gain level of 17 db was achieved. A 3-db bandwidth in excess of 350 MHz was attained, while deviation from phase linearity of about + or - 1 degree over 50 MHz was achieved. The paramp operates within specification over an ambient temperature range of -5 C to +50 C. The performance requirements and the operation of the K sub u-band parametric amplifier system are described. The final test results are also given.

  6. A Low-Noise Semiconductor Optical Amplifier

    SciTech Connect

    Ratowsky, R.P.; Dijaili, S.; Kallman, J.S.; Feit, M.D.; Walker, J.

    1999-03-23

    Optical amplifiers are essential devices for optical networks, optical systems, and computer communications. These amplifiers compensate for the inevitable optical loss in long-distance propagation (>50 km) or splitting (>10x). Fiber amplifiers such as the erbium-doped fiber amplifier have revolutionized the fiber-optics industry and are enjoying widespread use. Semiconductor optical amplifiers (SOAs) are an alternative technology that complements the fiber amplifiers in cost and performance. One obstacle to the widespread use of SOAs is the severity of the inevitable noise output resulting from amplified spontaneous emission (ASE). Spectral filtering is often used to reduce ASE noise, but this constrains the source spectrally, and improvement is typically limited to about 10 dB. The extra components also add cost and complexity to the final assembly. The goal of this project was to analyze, design, and take significant steps toward the realization of an innovative, low-noise SOA based on the concept of ''distributed spatial filtering'' (DSF). In DSF, we alternate active SOA segments with passive free-space diffraction regions. Since spontaneous emission radiates equally in all directions, the free-space region lengthens the amplifier for a given length of gain region, narrowing the solid angle into which the spontaneous emission is amplified [1,2]. Our innovation is to use spatial filtering in a differential manner across many segments, thereby enhancing the effect when wave-optical effects are included [3]. The structure quickly and effectively strips the ASE into the higher-order modes, quenching the ASE gain relative to the signal.

  7. Low noise amplifiers above 18 GHz

    NASA Astrophysics Data System (ADS)

    Kennan, W.; Chye, P.

    Noise reduction in ground stations operating above 18 GHz are explored in terms of current limitations in device, measurement and circuit technology and progress on a low noise amplifier. GaAs FETs have, as of 1982, reached a level of 1.55 dB noise and 12.3 dB gain. The devices include a 75 micron gate width and sub-quarter micron gate length. The noise figures are thus far determined in the 20-22 GHz range. A balanced microstrip circuit 0.65 x 0.51 cm in size featuring Lange couplers, input and output matching circuits, quarter wavelength bias chokes and TaN resistor bias networks has been developed for VSWR and cascading stages applications. The amplifier, in a two-stage configuration, has furnished a bandwidth of 12-22 GHz.

  8. Architectures for Low-noise CMOS Electronic Imaging

    NASA Astrophysics Data System (ADS)

    Kawahito, Shoji

    This chapter discusses various types of signal readout architectures for CMOS image sensors, implementing ultra-low-noise conversion of photo-generated charge packets into digital output values. It is based on a detailed analysis of the different noise sources in a CMOS imager, the noise responses of column noise cancelling circuits using correlated double sampling (CDS) and correlated multiple sampling (CMS) techniques and a noiseless signal readout technique using a precise digitizer. Finally, a practical example for the design of a CMOS image sensor with single-photon resolution is presented, and the technological requirements for meeting the condition for room-temperature readout noise of significantly less than 1 electron are discussed.

  9. Matched wideband low-noise amplifiers for radio astronomy.

    PubMed

    Weinreb, S; Bardin, J; Mani, H; Jones, G

    2009-04-01

    Two packaged low noise amplifiers for the 0.3-4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300-4 K and achieve noise temperatures in the 5 K range (<0.1 dB noise figure) at 15 K physical temperature. One amplifier utilizes commercially available, plastic-packaged SiGe transistors for first and second stages; the second amplifier is identical except it utilizes an experimental chip transistor as the first stage. Both amplifiers use resistive feedback to provide input reflection coefficient S11<-10 dB over a decade bandwidth with gain over 30 dB. The amplifiers can be used as rf amplifiers in very low noise radio astronomy systems or as i.f. amplifiers following superconducting mixers operating in the millimeter and submillimeter frequency range.

  10. A Low Noise Amplifier for Neural Spike Recording Interfaces

    PubMed Central

    Ruiz-Amaya, Jesus; Rodriguez-Perez, Alberto; Delgado-Restituto, Manuel

    2015-01-01

    This paper presents a Low Noise Amplifier (LNA) for neural spike recording applications. The proposed topology, based on a capacitive feedback network using a two-stage OTA, efficiently solves the triple trade-off between power, area and noise. Additionally, this work introduces a novel transistor-level synthesis methodology for LNAs tailored for the minimization of their noise efficiency factor under area and noise constraints. The proposed LNA has been implemented in a 130 nm CMOS technology and occupies 0.053 mm-sq. Experimental results show that the LNA offers a noise efficiency factor of 2.16 and an input referred noise of 3.8 μVrms for 1.2 V power supply. It provides a gain of 46 dB over a nominal bandwidth of 192 Hz–7.4 kHz and consumes 1.92 μW. The performance of the proposed LNA has been validated through in vivo experiments with animal models. PMID:26437411

  11. External Peltier Cooler For Low-Noise Amplifier

    NASA Technical Reports Server (NTRS)

    Soper, Terry A.

    1990-01-01

    Inexpensive Peltier-effect cooling module made of few commercially available parts used to reduce thermal noise in microwave amplifier. Retrofitted to almost any microwave low-noise amplifier or receiver preamplifier used in communication, telemetry, or radar. Includes copper or aluminum cold plate held tightly against unit to be cooled by strap-type worm-gear clamps.

  12. Cryogenic ultra-low-noise SiGe transistor amplifier.

    PubMed

    Ivanov, B I; Trgala, M; Grajcar, M; Il'ichev, E; Meyer, H-G

    2011-10-01

    An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.

  13. A low noise CMOS RF front-end for UWB 6-9 GHz applications

    NASA Astrophysics Data System (ADS)

    Feng, Zhou; Ting, Gao; Fei, Lan; Wei, Li; Ning, Li; Junyan, Ren

    2010-11-01

    An integrated fully differential ultra-wideband CMOS RF front-end for 6-9 GHz is presented. A resistive feedback low noise amplifier and a gain controllable IQ merged folded quadrature mixer are integrated as the RF front-end. The ESD protected chip is fabricated in a TSMC 0.13 μm RF CMOS process and achieves a maximum voltage gain of 23-26 dB and a minimum voltage gain of 16-19 dB, an averaged total noise figure of 3.3-4.6 dB while operating in the high gain mode and an in-band IIP3 of -12.6 dBm while in the low gain mode. This RF front-end consumes 17 mA from a 1.2 V supply voltage.

  14. X-Band Ultra-Low Noise Maser Amplifier Performance

    NASA Technical Reports Server (NTRS)

    Glass, G.; Johnson, D.; Ortiz, G.

    1993-01-01

    Noise temperature measurements of an 8440 MHz ultra-low noise maser amplifier (ULNA) have been performed at sub-atmospheric, liquid helium temperatures. The traveling wave maser operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.23 plus or minus 0.16 K at a physical temperature of 1.60 kelvin. At this physical temperature the observed gain per unit length of ruby was 4.6 dB/cm, and the amplifier had a 3 dB-bandwidth of 76 MHz.

  15. Cross-talk free, low-noise optical amplifier

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Deri, Robert J.

    1995-01-01

    A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier.

  16. Cross-talk free, low-noise optical amplifier

    DOEpatents

    Dijaili, S.P.; Patterson, F.G.; Deri, R.J.

    1995-07-25

    A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier. 11 figs.

  17. A Low-Noise Transimpedance Amplifier for BLM-Based Ion Channel Recording

    PubMed Central

    Crescentini, Marco; Bennati, Marco; Saha, Shimul Chandra; Ivica, Josip; de Planque, Maurits; Morgan, Hywel; Tartagni, Marco

    2016-01-01

    High-throughput screening (HTS) using ion channel recording is a powerful drug discovery technique in pharmacology. Ion channel recording with planar bilayer lipid membranes (BLM) is scalable and has very high sensitivity. A HTS system based on BLM ion channel recording faces three main challenges: (i) design of scalable microfluidic devices; (ii) design of compact ultra-low-noise transimpedance amplifiers able to detect currents in the pA range with bandwidth >10 kHz; (iii) design of compact, robust and scalable systems that integrate these two elements. This paper presents a low-noise transimpedance amplifier with integrated A/D conversion realized in CMOS 0.35 μm technology. The CMOS amplifier acquires currents in the range ±200 pA and ±20 nA, with 100 kHz bandwidth while dissipating 41 mW. An integrated digital offset compensation loop balances any voltage offsets from Ag/AgCl electrodes. The measured open-input input-referred noise current is as low as 4 fA/√Hz at ±200 pA range. The current amplifier is embedded in an integrated platform, together with a microfluidic device, for current recording from ion channels. Gramicidin-A, α-haemolysin and KcsA potassium channels have been used to prove both the platform and the current-to-digital converter. PMID:27213382

  18. A Low-Noise Transimpedance Amplifier for BLM-Based Ion Channel Recording.

    PubMed

    Crescentini, Marco; Bennati, Marco; Saha, Shimul Chandra; Ivica, Josip; de Planque, Maurits; Morgan, Hywel; Tartagni, Marco

    2016-05-19

    High-throughput screening (HTS) using ion channel recording is a powerful drug discovery technique in pharmacology. Ion channel recording with planar bilayer lipid membranes (BLM) is scalable and has very high sensitivity. A HTS system based on BLM ion channel recording faces three main challenges: (i) design of scalable microfluidic devices; (ii) design of compact ultra-low-noise transimpedance amplifiers able to detect currents in the pA range with bandwidth >10 kHz; (iii) design of compact, robust and scalable systems that integrate these two elements. This paper presents a low-noise transimpedance amplifier with integrated A/D conversion realized in CMOS 0.35 μm technology. The CMOS amplifier acquires currents in the range ±200 pA and ±20 nA, with 100 kHz bandwidth while dissipating 41 mW. An integrated digital offset compensation loop balances any voltage offsets from Ag/AgCl electrodes. The measured open-input input-referred noise current is as low as 4 fA/√Hz at ±200 pA range. The current amplifier is embedded in an integrated platform, together with a microfluidic device, for current recording from ion channels. Gramicidin-A, α-haemolysin and KcsA potassium channels have been used to prove both the platform and the current-to-digital converter.

  19. Low Noise Amplifiers and Receivers for Remote Sensing

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Lim, Boon; Gaier, Todd; Tanner, Alan; Varonen, Mikko; Samoska, Lorene; Brown, Shannon; Lambrigtsen, Bjorn; Reising, Steven; Tanabe, Jordan; Montes, Oliver; Dawson, Douglas; Parashare, Chaitali

    2011-01-01

    The study of atmospheric dynamics and climatology depend on accurate and frequent measurements of temperature and humidity profiles of the atmosphere. These measurements furthermore enable highly accurate measurements of ocean topography by providing total column water vapour data for radar path delay correction. The atmospheric temperature profile is characterised at the oxygen molecule absorption frequencies (60 and 118 GHz) and the humidity profile at the water molecule absorption frequencies (23 and 183 GHz). Total column measurements can be achieved by comparing measured radiometric temperatures at atmospheric window channels, such as 90, 130 and 166 GHz. The standard receiver technology for these frequencies was diode mixers with MMIC LNAs being applied at the lower frequencies. The sensitivity of millimetre wave receivers improved significantly with the introduction of the low noise 35 nm gate length InP MMIC amplifiers. We currently achieve 3 dB noise figure at 180 GHz and 2 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.

  20. Low Noise Amplifiers and Receivers for Remote Sensing

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Lim, Boon; Gaier, Todd; Tanner, Alan; Varonen, Mikko; Samoska, Lorene; Brown, Shannon; Lambrigsten, Bjorn; Reising, Steven; Tanabe, Jordan; Montes, Oliver; Dawson, Douglas; Parashare, Chaitali

    2012-01-01

    The study of atmospheric dynamics and climatology depend on accurate and frequent measurements of temperature and humidity profiles of the atmosphere. These measurements furthermore enable highly accurate measurements of ocean topography by providing total column water vapour data for radar path delay correction. The atmospheric temperature profile is characterized at the oxygen molecule absorption frequencies (60 and 118 GHz) and the humidity profile at the water molecule absorption frequencies (23 and 183 GHz). Total column measurements can be achieved by comparing measured radiometric temperatures at atmospheric window channels, such as 90, 130, and 166 GHz. The standard receiver technology for these frequencies was diode mixers with MMIC LNAs being applied at the lower frequencies. The sensitivity of millimeter wave receivers improved significantly with the introduction of the low noise 35 nm gate length InP MMIC amplifiers. We currently achieve 3 dB noise figure at 180 GHz and 2 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurements campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography alitmetery.

  1. Low Noise Amplifiers and Receivers for Remote Sensing

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Lim, Boon; Gaier, Todd; Tanner, Alan; Varonen, Mikko; Samoska, Lorene; Brown, Shannon; Lambrigtsen, Bjorn; Reising, Steven; Tanabe, Jordan; hide

    2011-01-01

    The study of atmospheric dynamics and climatology depend on accurate and frequent measurements of temperature and humidity profiles of the atmosphere. These measurements furthermore enable highly accurate measurements of ocean topography by providing total column water vapour data for radar path delay correction. The atmospheric temperature profile is characterised at the oxygen molecule absorption frequencies (60 and 118 GHz) and the humidity profile at the water molecule absorption frequencies (23 and 183 GHz). Total column measurements can be achieved by comparing measured radiometric temperatures at atmospheric window channels, such as 90, 130 and 166 GHz. The standard receiver technology for these frequencies was diode mixers with MMIC LNAs being applied at the lower frequencies. The sensitivity of millimetre wave receivers improved significantly with the introduction of the low noise 35 nm gate length InP MMIC amplifiers. We currently achieve 3 dB noise figure at 180 GHz and 2 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.

  2. A Dynamic Instrumentation Amplifier for Low-Power and Low-Noise Biopotential Acquisition

    PubMed Central

    Kim, Jongpal; Ko, Hyoungho

    2016-01-01

    A low-power and low-noise dynamic instrumentation amplifier (IA) for biopotential acquisition is presented. A dynamic IA that can reduce power consumption with a timely piecewise power-gating method, and noise level with an alternating input and chopper stabilization technique is fabricated with a 0.13-μm CMOS. Using the reconfigurable architecture of the IA, various combinations of the low-noise schemes are investigated. The combination of power gating and chopper stabilization shows a lower noise performance than the combination of power gating and alternating input switching scheme. This dynamic IA achieved a power reduction level of 50% from 10 µA to 5 µA and a noise reduction of 90% from 9.1 µVrms to 0.92 µVrms with the combination of the power gating and chopper stabilization scheme.

  3. Low Noise Amplifier Receivers from Millimeter Wave Atmospheric Remote Sensing

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Lim, Boon; Gaier, Todd; Tanner, Alan; Varonen, Mikko; Samoska, Lorene; Brown, Shannon; Lambrigsten, Bjorn; Reising, Steven; Tanabe, Jordan; Montes, Oliver; Dawson, Douglas; Parashare, Chaitali

    2012-01-01

    We currently achieve 3.4 dB noise figure at 183GHz and 2.1 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.

  4. Low Noise Amplifier Receivers from Millimeter Wave Atmospheric Remote Sensing

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Lim, Boon; Gaier, Todd; Tanner, Alan; Varonen, Mikko; Samoska, Lorene; Brown, Shannon; Lambrigsten, Bjorn; Reising, Steven; Tanabe, Jordan; hide

    2012-01-01

    We currently achieve 3.4 dB noise figure at 183GHz and 2.1 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.

  5. Low-Noise Amplifier for 100 to 180 GHz

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Pukala, David; Fung, King Man; Gaier, Todd; Mei, Xiaobing; Lai, Richard; Deal, William

    2009-01-01

    A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.

  6. Low-Noise MMIC Amplifiers for 120 to 180 GHz

    NASA Technical Reports Server (NTRS)

    Pukala, David; Samoska, Lorene; Peralta, Alejandro; Bayuk, Brian; Grundbacher, Ron; Oliver, Patricia; Cavus, Abdullah; Liu, Po-Hsin

    2009-01-01

    Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).

  7. Linearity improvement of cascode low-noise amplifiers using double DS method with a tuned inductor

    NASA Astrophysics Data System (ADS)

    Park, Chi Wan; Ahn, Youngbin; Lee, Jaehoon; Jeong, Jichai

    2010-07-01

    We propose a highly linear low-noise amplifier (LNA) using the double derivative superposition method with a tuned inductor. This topology has an auxiliary common gate stage of the cascode amplifier to cancel each third-order intermodulation distortion (IMD3) component and can provide a high third-order input intercept point (IIP3) for the 5.25 GHz frequency band. From the simulation results using the TSMC 0.18 μm RF CMOS process, the IIP3 in the proposed cascode LNAs can be improved by 9 dB, compared with the conventional derivative superposition method. The proposed LNA achieves an IIP3 of + 15 dBm with a gain of 10.5 dB, a noise figure of 2.4 dB, and a power consumption of 6 mA at 1.5 V.

  8. Ultra-low noise miniaturized neural amplifier with hardware averaging.

    PubMed

    Dweiri, Yazan M; Eggers, Thomas; McCallum, Grant; Durand, Dominique M

    2015-08-01

    associated with the miniaturized contacts and the high channel count in electrode arrays. This technique can be adopted for other applications where miniaturized and implantable multichannel acquisition systems with ultra-low noise and low power are required.

  9. Ultra-low noise miniaturized neural amplifier with hardware averaging

    NASA Astrophysics Data System (ADS)

    Dweiri, Yazan M.; Eggers, Thomas; McCallum, Grant; Durand, Dominique M.

    2015-08-01

    presence of high source impedances that are associated with the miniaturized contacts and the high channel count in electrode arrays. This technique can be adopted for other applications where miniaturized and implantable multichannel acquisition systems with ultra-low noise and low power are required.

  10. Cooling a low noise amplifier with a micromachined cryogenic cooler

    NASA Astrophysics Data System (ADS)

    Cao, H. S.; Witvers, R. H.; Vanapalli, S.; Holland, H. J.; ter Brake, H. J. M.

    2013-10-01

    The sensitivity of antenna systems increases with increasing active area, but decreases at higher noise figure of the low-noise amplifier (LNA). Cooling the LNA locally results in significant improvement in the gain and in lowering the noise figure of the LNA. Micromachined Joule-Thomson (JT) coolers can provide a cryogenic environment to the LNA. They are attractive because they have no cold moving parts and can be scaled down to match the size and the power consumption of LNAs. The performance of a LNA mounted on a JT microcooler with dimensions of 60.0 × 9.5 × 0.72 mm3 is reported in this paper. The microcooler is operated with nitrogen gas and the cold-end temperature is controlled at 115 K. The measured net cooling power of the microcooler is about 43 mW when the LNA is not operating. The power dissipation of the LNA is 26 mW, with a supply voltage of 2 V. At room temperature the noise figure of the LNA is 0.83 dB and the gain lies between 17.9 and 13.1 dB, in the frequency range of 0.65 and 1.05 GHz. Upon cooling to 115 K, the noise figure drops to 0.50 dB and the increase in gain varies in the range of 0.6-1.5 dB.

  11. Cryogenic ultra-low noise HEMT amplifiers board

    NASA Astrophysics Data System (ADS)

    de la Broïse, Xavier; Bounab, Ayoub

    2015-07-01

    High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at a very low temperature, have demonstrated their capacity to be used in place of Si JFETs, when very high input impedance and working temperatures below 100 K are required. We have developed and tested simple amplifiers based only on this transistor technology, in order to work at a temperature as low as 1 K or less. They demonstrate at 4.2 K a typical noise of 1.6 nV/√{ Hz } at 100 Hz, 0.42 nV/√{ Hz } at 1 kHz and 0.32 nV/√{ Hz } at 10 kHz, with a gain of 50 and a power consumption of 1.4 mW per channel. Two boards have been designed for two different research applications: one for the readout of GMR magnetometers for medical and space applications, the other for search of weakly interacting massive particles (WIMPs) in Edelweiss experiment (HARD project).

  12. Noise and linearity optimization methods for a 1.9GHz low noise amplifier.

    PubMed

    Guo, Wei; Huang, Da-Quan

    2003-01-01

    Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade-offs. The 1.9GHz Complementary Metal-Oxide-Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.

  13. W-band InP based HEMT MMIC low noise amplifiers

    NASA Technical Reports Server (NTRS)

    Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

    2002-01-01

    This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

  14. Hybrid cryogenic low noise amplifier for the MeetKAT array

    NASA Astrophysics Data System (ADS)

    Jiang, Frank; Claude, Stephan; Garcia, Dominic

    2014-07-01

    Hybrid microwave integrated circuit technology is used to design and develop an L-band (900-2100 MHz) ultra-low noise amplifier for the MeerKAT array. This low noise amplifier achieved 2 K noise temperature, more than 40 dB gain, S11 & S22 better than -11 & -15 dB at 15 K ambient. Linearity and gain compression is verified. The noise performance is explored as the cooling temperature changes from 15 to 85 K.

  15. Matching technique yields optimum LNA performance. [Low Noise Amplifiers

    NASA Technical Reports Server (NTRS)

    Sifri, J. D.

    1986-01-01

    The present article is concerned with a case in which an optimum noise figure and unconditional stability have been designed into a 2.385-GHz low-noise preamplifier via an unusual method for matching the input with a suspended line. The results obtained with several conventional line-matching techniques were not satisfactory. Attention is given to the minimization of thermal noise, the design procedure, requirements for a high-impedance line, a sampling of four matching networks, the noise figure of the single-line matching network as a function of frequency, and the approaches used to achieve unconditional stability.

  16. Two-Stage, 90-GHz, Low-Noise Amplifier

    NASA Technical Reports Server (NTRS)

    Samoska, Lorene A.; Gaier, Todd C.; Xenos, Stephanie; Soria, Mary M.; Kangaslahti, Pekka P.; Cleary, Kieran A.; Ferreira, Linda; Lai, Richard; Mei, Xiaobing

    2010-01-01

    A device has been developed for coherent detection of the polarization of the cosmic microwave background (CMB). A two-stage amplifier has been designed that covers 75-110 GHz. The device uses the emerging 35-nm InP HEMT technology recently developed at Northrop Grumman Corporation primarily for use at higher frequencies. The amplifier has more than 18 dB gain and less than 35 K noise figure across the band. These devices have noise less than 30 K at 100 GHz. The development started with design activities at JPL, as well as characterization of multichip modules using existing InP. Following processing, a test campaign was carried out using single-chip modules at 100 GHz. Successful development of the chips will lead to development of multichip modules, with simultaneous Q and U Stokes parameter detection. This MMIC (monolithic microwave integrated circuit) amplifier takes advantage of performance improvements intended for higher frequencies, but in this innovation are applied at 90 GHz. The large amount of available gain ultimately leads to lower possible noise performance at 90 GHz.

  17. Low Noise and Highly Linear Wideband CMOS RF Front-End for DVB-H Direct-Conversion Receiver

    NASA Astrophysics Data System (ADS)

    Nam, Ilku; Moon, Hyunwon; Woo, Doo Hyung

    In this paper, a wideband CMOS radio frequency (RF) front-end for digital video broadcasting-handheld (DVB-H) receiver is proposed. The RF front-end circuit is composed of a single-ended resistive feedback low noise amplifier (LNA), a single-to-differential amplifier, an I/Q down-conversion mixer with linearized transconductors employing third order intermodulation distortion cancellation, and a divide-by-two circuit with LO buffers. By employing a third order intermodulation (IMD3) cancellation technique and vertical NPN bipolar junction transistor (BJT) switching pair for an I/Q down-conversion mixer, the proposed RF front-end circuit has high linearity and low low-frequency noise performance. It is fabricated in a 0.18µm deep n-well CMOS technology and draws 12mA from a 1.8V supply voltage. It shows a voltage gain of 31dB, a noise figure (NF) lower than 2.6dB, and an IIP3 of -8dBm from 470MHz to 862MHz.

  18. Ultra low noise cryogenic amplifiers for radio astronomy

    NASA Astrophysics Data System (ADS)

    Bryerton, E. W.; Morgan, Matthew Alexander; Pospieszalski, Marian W.

    2013-01-01

    Cryogenic cooling of receivers to reduce their noise temperature is especially important in radio astronomy, as the antenna noise temperature is determined by the cosmic microwave background radiation (2.725 K) modified by the presence of atmosphere. For frequencies up to 120 GHz direct amplification at cryogenic temperatures is typically employed using InP heterostructure field-effect transistors (HFETs) or, more recently, SiGe heterostructure bipolar transistors (HBTs). This article reviews developments in this field and presents the current state-of-the-art. Examples of noise performance of amplifiers using InP HFETs and SiGe HBTs are compared with the model predications. Some gaps in our current understanding of experimental results are emphasized, and some comments on possible future developments are offered.

  19. Extremely low noise UHF-band amplifiers for square kilometer array

    NASA Astrophysics Data System (ADS)

    Jiang, Nianhua; Garcia, Dominic; Niranjanan, Pat; Halman, Mark; Wevers, Ivan

    2016-07-01

    This paper demonstrates two designs of extremely low noise amplifiers in the low frequency range of 350 MHz to 1070 MHz. Hybrid microwave integrated circuit is adapted for a low noise design at this low frequency range. Discrete passive components with high-Q and large values are selected to integrate with the best low noise transistors to optimize the LNA performance. The first UHF band cryogenic LNA was designed with InP HEMTs in all three stages for Square Kilometer Array - mid telescope band-1 receiver. This LNA extended the low end frequency to 350 MHz, and achieved averaging 1.4 Kelvin of a record low noise temperature, more than 47 dB gain, and good input and output return losses < -10 dB over the broad bandwidth from 350 to 1050 MHz at 15 K. The second UHF band cryogenic LNA was developed for MeerKAT Array, a precursor of Square Kilometer Array. This LNA was designed with InP HEMT transistor at first stage to achieve best low noise performance and GaAs HEMTs for second and third stages to replace InP HEMTs and realize high gain and good amplitude stability at cryogenic temperature. The second LNA achieved a record low noise temperature of averaging 0.6 Kelvin, more than 45 dB gain, and good input and output return losses ≤ -12 dB over the wide bandwidth from 580 to 1070 MHz at 15 K.

  20. Cryogenic, low-noise high electron mobility transistor amplifiers for the Deep Space Network

    NASA Technical Reports Server (NTRS)

    Bautista, J. J.

    1993-01-01

    The rapid advances recently achieved by cryogenically cooled high electron mobility transistor (HEMT) low-noise amplifiers (LNA's) in the 1- to 10-GHz range are making them extremely competitive with maser amplifiers. In order to address future spacecraft navigation, telemetry, radar, and radio science needs, the Deep Space Network is investing both maser and HEMT amplifiers for its Ka-band (32-GHz) downlink capability. This article describes the current state cryogenic HEMT LNA development at Ka-band for the DSN. Noise performance results at S-band (2.3 GHz) and X-band (8.5 GHz) for HEMT's and masers are included for completeness.

  1. Temperature-stabilized differential amplifier for low-noise DC measurements

    NASA Astrophysics Data System (ADS)

    Märki, P.; Braem, B. A.; Ihn, T.

    2017-08-01

    A tabletop low-noise differential amplifier with a bandwidth of 100 kHz is presented. Low voltage drifts of the order of 100 nV/day are reached by thermally stabilizing relevant amplifier components. The input leakage current is below 100 fA. Input-stage errors are reduced by extensive circuitry. Voltage noise, current noise, input capacitance, and input current are extraordinarily low. The input resistance is larger than 1 T Ω . The amplifiers were tested with and deployed for electrical transport measurements of quantum devices at cryogenic temperatures.

  2. A low-noise CMOS pixel direct charge sensor, Topmetal-II-

    NASA Astrophysics Data System (ADS)

    An, Mangmang; Chen, Chufeng; Gao, Chaosong; Han, Mikyung; Ji, Rong; Li, Xiaoting; Mei, Yuan; Sun, Quan; Sun, Xiangming; Wang, Kai; Xiao, Le; Yang, Ping; Zhou, Wei

    2016-02-01

    We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a < 15e- analog noise and a 200e- minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. These characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.

  3. A low-noise CMOS pixel direct charge sensor, Topmetal-II-

    DOE PAGES

    An, Mangmang; Chen, Chufeng; Gao, Chaosong; ...

    2015-12-12

    In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e- analog noise andmore » a 200e- minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

  4. A low-noise CMOS pixel direct charge sensor, Topmetal-II-

    SciTech Connect

    An, Mangmang; Chen, Chufeng; Gao, Chaosong; Han, Mikyung; Ji, Rong; Li, Xiaoting; Mei, Yuan; Sun, Quan; Sun, Xiangming; Wang, Kai; Xiao, Le; Yang, Ping; Zhou, Wei

    2015-12-12

    In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e- analog noise and a 200e- minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.

  5. Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

    NASA Technical Reports Server (NTRS)

    Larkoski, Patricia V.; Kangaslahti, Pekka; Samoska, Lorene; Lai, Richard; Sarkozy, Stephen

    2013-01-01

    We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

  6. Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement.

    PubMed

    Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

    2017-02-01

    Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 10(11) V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

  7. Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement

    NASA Astrophysics Data System (ADS)

    Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

    2017-02-01

    Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 1011 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

  8. A Cryogenic SiGe Low-noise Amplifier Optimized for Phased-array Feeds

    NASA Astrophysics Data System (ADS)

    Groves, Wavley M., III; Morgan, Matthew A.

    2017-08-01

    The growing number of phased-array feeds (PAF) being built for radio astronomy demonstrates an increasing need for low-noise amplifiers (LNA), which are designed for repeatability, low noise, and ease of manufacture. Specific design features that help to achieve these goals include the use of unpackaged transistors (for cryogenic operation); single-polarity biasing; straight plug-in radio frequency (RF) interfaces to facilitate installation and re-work; and the use of off-the-shelf components. The focal L-band array for the Green Bank Telescope (FLAG) is a cooperative effort by Brigham Young University and the National Radio Astronomy Observatory using warm dipole antennae and cryogenic Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) LNAs. These LNAs have an in band gain average of 38 dB and 4.85 Kelvin average noise temperature. Although the FLAG instrument was the driving instrument behind this development, most of the key features of the design and the advantages they offer apply broadly to other array feeds, including independent-beam and phased, and for many antenna types such as horn, dipole, Vivaldi, connected-bowtie, etc. This paper focuses on the unique requirements array feeds have for low-noise amplifiers and how amplifier manufacturing can accommodate these needs.

  9. Low noise buffer amplifiers and buffered phase comparators for precise time and frequency measurement and distribution

    NASA Technical Reports Server (NTRS)

    Eichinger, R. A.; Dachel, P.; Miller, W. H.; Ingold, J. S.

    1982-01-01

    Extremely low noise, high performance, wideband buffer amplifiers and buffered phase comparators were developed. These buffer amplifiers are designed to distribute reference frequencies from 30 KHz to 45 MHz from a hydrogen maser without degrading the hydrogen maser's performance. The buffered phase comparators are designed to intercompare the phase of state of the art hydrogen masers without adding any significant measurement system noise. These devices have a 27 femtosecond phase stability floor and are stable to better than one picosecond for long periods of time. Their temperature coefficient is less than one picosecond per degree C, and they have shown virtually no voltage coefficients.

  10. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter.

    PubMed

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-03-03

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) deletedCMOS terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz.

  11. A 24dB Gain 51-68GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors

    NASA Astrophysics Data System (ADS)

    Li, Ning; Bunsen, Keigo; Takayama, Naoki; Bu, Qinghong; Suzuki, Toshihide; Sato, Masaru; Kawano, Yoichi; Hirose, Tatsuya; Okada, Kenichi; Matsuzawa, Akira

    At mm-wave frequency, the layout of CMOS transistors has a larger effect on the device performance than ever before in low frequency. In this work, the distance between the gate and drain contact (Dgd) has been enlarged to obtain a better maximum available gain (MAG). By using the asymmetric-layout transistor, a 0.6dB MAG improvement is realized when Dgd changes from 60nm to 200nm. A four-stage common-source low noise amplifier is implemented in a 65nm CMOS process. A measured peak power gain of 24dB is achieved with a power dissipation of 30mW from a 1.2-V power supply. An 18dB variable gain is also realized by adjusting the bias voltage. The measured 3-dB bandwidth is about 17GHz from 51GHz to 68GHz, and noise figure (NF) is from 4.0dB to 7.6dB.

  12. A microwave cryogenic low-noise amplifier based on sige heterostructures

    NASA Astrophysics Data System (ADS)

    Ivanov, B. I.; Grajcar, M.; Novikov, I. L.; Vostretsov, A. G.; Il'ichev, E.

    2016-04-01

    A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude-frequency response of the "supercon-ducting qubit-coplanar cavity" structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.

  13. Design of a wideband low noise amplifier for radio-astronomy applications

    NASA Astrophysics Data System (ADS)

    Hamaizia, Z.; Sengouga, N.; Missous, M.; Yagoub, M. C. E.

    2010-04-01

    In this work, we discuss the design of two low noise amplifiers (LNA) based on 1μm gate-length pHEMT InP transistors using two topologies. Designed for radio-astronomy applications, the first is a cascode circuit with a maximum gain of 15dB and noise figure of 0.6dB, while the second is a 2-stage cascaded amplifier with 27 dB gain and 0.63dB noise figure. The two amplifiers exhibit an input 1-dB compression point of -22dBm and -26dBm respectively, and a third order input intercept point of -10dBm and -5dBm, respectively.

  14. Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz

    NASA Technical Reports Server (NTRS)

    Gaier, Todd; Samoska, Lorene; Fung, King Man; Deal, William; Mei, Xiaobing; Lai, Richard

    2009-01-01

    A document presents data from tests of a low-noise amplifier module operating in the frequency range from 290 to 340 GHz said to be the highest-frequency low-noise, solid-state amplifier ever developed. The module comprised a three-stage monolithic microwave integrated circuit (MMIC) amplifier integrated with radial probe MMIC/waveguide transitions and contained in a compact waveguide package, all according to the concepts described in the immediately preceding article and in the referenced prior article, "Integrated Radial Probe Transition From MMIC to Waveguide" (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. The tests included measurements by the Y-factor method, in which noise figures are measured repeatedly with an input noise source alternating between an "on" (hot-load) condition and an "off" (cold-load) condition. (The Y factor is defined as the ratio between the "on" and "off" noise power levels.) The test results showed that, among other things, the module exhibited a minimum noise figure of about 8.7 dB at 325 GHz and that the gain at that frequency under the bias conditions that produced the minimum noise figure was between about 9 and 10 dB.

  15. Low Noise Optically Pre-amplified Lightwave Receivers and Other Applications of Fiber Optic Parametric Amplifiers

    DTIC Science & Technology

    2010-07-27

    noise performance, optical gain bandwidth, and power efficiency. An interesting alternative to the mature Erbium-doped fiber amplifier ( EDFA ) is the...fibers (HNLF) and high power booster EDFAs . The FOPA can provide a very wide gain bandwidth [2], very high gain (70 dB was demonstrated in [3]), and...amplified spontaneous emission (ASE) noise in EDFAs is also generated. It is sometimes referred to as amplified quantum noise. Maximum gain (at the gain

  16. Development of a cryogenic DC-low noise amplifier for SQuID-based readout electronics

    NASA Astrophysics Data System (ADS)

    Macculi, C.; Torrioli, G.; Di Giorgio, A.; Spinoglio, L.; Piro, Luigi

    2014-07-01

    We present the preliminary results of the design and test activities for a DC cryogenic low noise amplifier for the SAFARI imaging spectrometer, planned to be onboard the SPICA mission, necessary not only to drive, as usual, the voltage signal produced by the SQuID but also to boost such signals over about 7 meter of path towards the warm feedback electronics. This development has been done in the framework of the mission preparation studies, within the European Consortium for the development of the SAFARI instrument. The actual configuration of the SAFARI focal plane assembly (FPA), indeed, foresees a long distance to the warm back end electronics. It is therefore mandatory to boost the faint electric signal coming from the SQuID device by keeping under control both power dissipation and noise: this is the main role of the designed Cryogenic Low Noise Amplifier (LNA). Working at 136K, it has a differential input gain-stage, and a differential balanced voltage buffer output stage, running at few mW target overall power. At present the design is based on the use of Heterojunction Si:Ge transistors, the required bandwidth is DC-4MHz and the required noise lower than 1 nV/rtHz.

  17. Updated design for a low-noise, wideband transimpedance photodiode amplifier

    SciTech Connect

    Paul, S. F.; Marsala, R.

    2006-10-15

    The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e{sub Na}=1.2 nV/{radical}Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >{approx}2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise.

  18. Electro-Static Discharge Protection Design for V-Band Low-Noise Amplifier Using Radio Frequency Junction Varactor

    NASA Astrophysics Data System (ADS)

    Tsai, Ming-Hsien; Huang, Sing-Kai; Hsu, Shawn S. H.

    2013-04-01

    The RF junction varactors are employed as electro-static discharge (ESD) protection devices and co-designed with 60 GHz low-noise amplifier (LNA) fabricated in a 65-nm CMOS technology. The junction varactor acts as an ESD diode to bypass ESD current during ESD zapping, and also utilized as a capacitor to be a part of input matching network of the LNA in normal RF operation. By transmission line pulse (TLP) measurement, the ESD protection capabilities of RF junction varactors are characterized with different device parameters. The experimental results demonstrate excellent second breakdown currents (It2) and high ratios of the ESD levels to parasitic capacitances (VESD/CESD). With ESD/matching co-design methodology, the ESD-protected LNA demonstrates a second breakdown current It2 of 1.4 A, corresponding to a 2-kV human-body-model (HBM) ESD protection level with a noise figure (NF) of 6.6 dB and a peak gain of 16.5 dB at 60 GHz under a power consumption of only 28 mW.

  19. Shunted Josephson tunnel junctions: High-frequency, self-pumped low noise amplifiers

    NASA Astrophysics Data System (ADS)

    Calander, N.; Claeson, T.; Rudner, S.

    1982-07-01

    The high-frequency amplification properties of transformer coupled, resistively shunted Josephson tunnel junctions have been investigated. The importance of the shunt loop inductance is stressed. It allows a high cutoff frequency, of significance for good high-frequency performance. The self-pumped parametric amplifier showed none of the excessive noise rise, which has hitherto plagued the development of externally pumped Josephson junction amplifiers. Around 10 GHz, we estimated a noise temperature less than 30 K for an amplifier pumped by a Josephson oscillation with a frequency well above twice the signal frequency. The corresponding gain of 5 dB may be increased in a better impedance matched circuit. The gain was very stable against variations in the bias conditions. A gain-bandwidth product as high as 0.3 was registered. The experimental results agreed well with the established theory for self-pumped parametric Josephson amplifiers. It should be possible to extend the low noise amplification by this device to mm wave frequencies. A relaxation oscillation occurred at a subharmonic of the Josephson frequency when the shunt loop inductance became large. The amplification in this mode followed closely the predictions of a simple model, where the signal modulated the switching of the sawtooth-like (relatively low frequency) relaxation current. Gains of about 15 dB were measured around 10 GHz, but the amplification was sensitive to bias conditions and noisy in this case where the relaxation frequency fell well below the signal frequency. Much improved properties were registered when the inductance was decreased so that the relaxation frequency approached the Josephson frequency and exceeded twice the signal frequency. The behavior then resembled that of a Josephson mode parametric amplifier, but the high content of harmonics of a relaxation oscillation meant that the amplifier became noisier due to converted noise from the many idler frequencies.

  20. A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

    PubMed Central

    Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

    2016-01-01

    An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively. PMID:27792131

  1. A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose.

    PubMed

    Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

    2016-10-25

    An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal-oxide-semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm². The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

  2. A sub-0.5 V operating RF low noise amplifier using tunneling-FET

    NASA Astrophysics Data System (ADS)

    Jhon, Hee-Sauk; Jeon, Jongwook; Kang, Myunggon; Choi, Woo Young

    2017-02-01

    60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4 GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET’s unique property of high subthreshold swing, it shows that substantial increase of gain performance was confirmed compared to that of conventional LNA using 60 nm bulk MOSFET at ultra-low voltage (ULV) condition. From the simulation study, TFET LNA at 0.4 V operating voltage has the gain of 15.1 dB and noise figure 50 of 3.5 dB while dissipating DC power consumption of 0.41 mW.

  3. 94-GHz MMIC CPW low-noise amplifier on InP

    NASA Astrophysics Data System (ADS)

    Dambrine, Gilles; Hoel, Virginie; Boret, Samuel; Grimbert, Bertrand; Bollaert, Sylvain; Wallart, Xavier; Lepilliet, Sylvie; Cappy, Alain

    1999-12-01

    High performances have been achieved at W-band with a 2- stage, 0.1 micrometers gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T- gate profile, we use silicon nitride SixNy technology, which leads to naturally passivated devices. For a drain-to-source current Ids equals 350 mA/mm the devices demonstrate a maximum intrinsic transconductance Gm of 1600 mS/mm and an intrinsic current gain cutoff frequency Fc equals 220 GHz. The extrinsic current gain cut-off frequency Ft is 175 GHz. The LNA shows a minimum noise figure of 3.3 dB with an associated gain of 11.5 dB at 94 GHz.

  4. Design of low noise class D amplifiers using an integrated filter

    NASA Astrophysics Data System (ADS)

    Haishi, Wang; Bo, Zhang

    2012-11-01

    This paper investigates the noise sources in a single-ended class D amplifier (SECDA) and suggests corresponding ways to lower the noise. The total output noise could be expressed as a function of the gain and noises from different sources. According to the function, the bias voltage (VB) is a primary noise source, especially for a SECDA with a large gain. A low noise SECDA is obtained by integrating a filter into the SECDA to lower the noise of the VB. The filter utilizes an active resister and an 80 pF capacitance to get a 3 Hz pole. A noise test and fast Fourier transform analysis show that the noise performance of this SECDA is the same as that of a SECDA with an external filter.

  5. A single-to-differential low-noise amplifier with low differential output imbalance

    NASA Astrophysics Data System (ADS)

    Lian, Duan; Wei, Huang; Chengyan, Ma; Xiaofeng, He; Yuhua, Jin; Tianchun, Ye

    2012-03-01

    This paper presents a single-ended input differential output low-noise amplifier intended for GPS applications. We propose a method to reduce the gain/amplitude and phase imbalance of a differential output exploiting the inductive coupling of a transformer or center-tapped differential inductor. A detailed analysis of the theory of imbalance reduction, as well as a discussion on the principle of choosing the dimensions of a transformer, are given. An LNA has been implemented using TSMC 0.18 μm technology with ESD-protected. Measurement on board shows a voltage gain of 24.6 dB at 1.575 GHz and a noise figure of 3.2 dB. The gain imbalance is below 0.2 dB and phase imbalance is less than 2 degrees. The LNA consumes 5.2 mA from a 1.8 V supply.

  6. Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

    NASA Astrophysics Data System (ADS)

    McCulloch, Mark A.; Grahn, Jan; Melhuish, Simon J.; Nilsson, Per-Ake; Piccirillo, Lucio; Schleeh, Joel; Wadefalk, Niklas

    2017-01-01

    We present the results of noise-temperature measurements for four radio astronomy MMIC low-noise amplifiers (LNAs) at physical temperatures from 2 to 160 K. We observe and confirm recent reports that the noise temperature of an LNA exhibits a quadratic dependence with respect to the physical temperature. We are also able to confirm the prediction by Pospieszalski that below a certain physical temperature there is no further significant reduction in noise temperature. We then discuss these results in the context of both the Pospieszalski noise model and some recent Monte-Carlo simulations, which have implied that at very low temperatures, heating of the electron channel above ambient temperature may help to explain the behavior of the drain temperature parameter.

  7. Simple nonlinearity evaluation and modeling of low-noise amplifiers with application to radio astronomy receivers.

    PubMed

    Casas, F J; Pascual, J P; de la Fuente, M L; Artal, E; Portilla, J

    2010-07-01

    This paper describes a comparative nonlinear analysis of low-noise amplifiers (LNAs) under different stimuli for use in astronomical applications. Wide-band Gaussian-noise input signals, together with the high values of gain required, make that figures of merit, such as the 1 dB compression (1 dBc) point of amplifiers, become crucial in the design process of radiometric receivers in order to guarantee the linearity in their nominal operation. The typical method to obtain the 1 dBc point is by using single-tone excitation signals to get the nonlinear amplitude to amplitude (AM-AM) characteristic but, as will be shown in the paper, in radiometers, the nature of the wide-band Gaussian-noise excitation signals makes the amplifiers present higher nonlinearity than when using single tone excitation signals. Therefore, in order to analyze the suitability of the LNA's nominal operation, the 1 dBc point has to be obtained, but using realistic excitation signals. In this work, an analytical study of compression effects in amplifiers due to excitation signals composed of several tones is reported. Moreover, LNA nonlinear characteristics, as AM-AM, total distortion, and power to distortion ratio, have been obtained by simulation and measurement with wide-band Gaussian-noise excitation signals. This kind of signal can be considered as a limit case of a multitone signal, when the number of tones is very high. The work is illustrated by means of the extraction of realistic nonlinear characteristics, through simulation and measurement, of a 31 GHz back-end module LNA used in the radiometer of the QUIJOTE (Q U I JOint TEnerife) CMB experiment.

  8. CMOS SiPM with integrated amplifier

    NASA Astrophysics Data System (ADS)

    Schwinger, Alexander; Brockherde, Werner; Hosticka, Bedrich J.; Vogt, Holger

    2017-02-01

    The integration of silicon photomultiplier (SiPM) and frontend electronics in a suitable optoelectronic CMOS process is a promising approach to increase the versatility of single-photon avalanche diode (SPAD)-based singlephoton detectors. By integrating readout amplifiers, the device output capacitance can be reduced to minimize the waveform tail, which is especially important for large area detectors (>10 × 10mm2). Possible architectures include a single readout amplifier for the whole detector, which reduces the output capacitance to 1:1 pF at minimal reduction in detector active area. On the other hand, including a readout amplifier in every SiPM cell would greatly improve the total output capacitance by minimizing the influence of metal routing parasitic capacitance, but requiring a prohibitive amount of detector area. As tradeoff, the proposed detector features one readout amplifier for each column of the detector matrix to allow for a moderate reduction in output capacitance while allowing the electronics to be placed in the periphery of the active detector area. The presented detector with a total size of 1.7 ♢ 1.0mm2 features 400 cells with a 50 μm pitch, where the signal of each column of 20 SiPM cells is summed in a readout channel. The 20 readout channels are subsequently summed into one output channel, to allow the device to be used as a drop-in replacement for commonly used analog SiPMs.

  9. Low input reflection cryogenic low noise amplifier for Radio Astronomy multipixel receivers

    NASA Astrophysics Data System (ADS)

    Amils, R. I.; Gallego, J. D.; Diez, C.; López Fernández, I.; Barcia, A.; Muñoz, S.; Sebastián, J. L.; Malo, I.

    2016-10-01

    The advancement of Radio Astronomy instruments pushes innovation in several fronts. Sensitivity aside, one way in which cryogenic receivers can be upgraded is by increasing the number of beams in single dish antennas, building what is commonly known as a Focal Plane Array (FPA). In this paper we present a novel reduced input reflection 4-12 GHz cryogenic Low Noise Amplifier (LNA) for the Intermediate Frequency (IF) of millimeter wave superheterodyne multipixel receivers with Superconductor-Insulator-Superconductor (SIS) mixers. The aim of this development is to reduce the input reflection of the amplifier to a level at which the bulky cryogenic isolators traditionally used in this type of receivers are no longer necessary and can be avoided. Ultimately this simplification would allow complying with the tight mass and volume restrictions imposed over FPAs. However, the improvement of the input reflection has a cost in terms of noise and gain performance. This effect is critically evaluated by comparing it with other alternative options built with devices of the same technology. The results show that this approach may have advantages in terms of sensitivity of the complete receiver.

  10. Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

    SciTech Connect

    Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P.

    2016-01-04

    We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

  11. Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

    NASA Astrophysics Data System (ADS)

    Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P.

    2016-01-01

    We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

  12. Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

    PubMed Central

    Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G.; Pappas, D. P.

    2016-01-01

    We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone we are able to generate parametric amplification using three-wave mixing. The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. Compared to similarly constructed four-wave mixing amplifiers, these devices operate with the RF pump at ~20 dB lower power and at frequencies far from the signal. This will permit easier integration into large scale qubit and detector applications. PMID:27114615

  13. Low-noise low-power readout electronics circuit development in standard CMOS technology for 4 K applications

    NASA Astrophysics Data System (ADS)

    Merken, Patrick; Souverijns, Tim; Putzeys, Jan; Creten, Ybe; Van Hoof, Chris

    2006-06-01

    In the framework of the Photodetector Array Camera and Spectrometer (PACS) project IMEC designed the Cold Readout Electronics (CRE) for the Ge:Ga far-infrared detector array. Key specifications for this circuit were high linearity, low power consumption and low noise at an operating temperature of 4.2K. We have implemented this circuit in a standard CMOS technology which guarantees high yield and uniformity, and design portability. A drawback of this approach is the anomalous behavior of CMOS transistors at temperatures below 30-40K. These cryogenic phenomena disturb the normal functionality of commonly used circuits. We were able to overcome these problems and developed a library of digital and analog building blocks based on the modeling of cryogenic behavior, and on adapted design and layout techniques. We will present the design of the 18 channel CRE circuit, its interface with the Ge:Ga sensor, and its electrical performance. We will show how the library that was developed for PACS served as a baseline for the designs used in the Darwin-far-infrared detector array, where a cryogenic 180 channel, 30μm pitch, Readout Integrated Circuit (ROIC) for flip-chip integration was developed. Other designs and topologies for low noise and low power applications will be equally presented.

  14. Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors

    PubMed Central

    Kawahito, Shoji; Seo, Min-Woong

    2016-01-01

    This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e−rms) when compared with the CMS gain of two (2.4 e−rms), or 16 (1.1 e−rms). PMID:27827972

  15. Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors.

    PubMed

    Kawahito, Shoji; Seo, Min-Woong

    2016-11-06

    This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e(-)rms) when compared with the CMS gain of two (2.4 e(-)rms), or 16 (1.1 e(-)rms).

  16. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

    PubMed Central

    Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

    2016-01-01

    This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31×31 focal plane array has been fully integrated in a 0.13μm standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0.2μV RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0.6 nW at 270 GHz and 0.8 nW at 600 GHz. PMID:26950131

  17. Design of a 24-40 GHz balanced low noise amplifier using Lange couplers

    NASA Astrophysics Data System (ADS)

    Zongnan, Zhang; Qinghua, Huang; Mingli, Hao; Hao, Yang; Haiying, Zhang

    2009-04-01

    A wide band (24-40 GHz) fully integrated balanced low noise amplifier (LNA) using Lange couplers was designed and fabricated with a 0.15 μm pseudomorphic HEMT (pHEMT) technology. A new method to design a low-loss and high-coupling Lange coupler for wide band application in microwave frequency was also presented. This Lange coupler has a minimum loss of 0.09 dB and a maximum loss of 0.2 dB over the bandwidth from 20 to 45 GHz. The measured results show that the realized four-stage balanced LNA using this Lange coupler exhibites a noise figure (NF) of less than 2.7 dB and the maximum gain of 30 dB; moreover, a noticeably improved reflection performance is achieved. The input VSWR and the output VSWR are respectively less than 1.45 and 1.35 dB across the 24-40 GHz frequency range.

  18. A low-noise low-power readout electronics circuit at 4 K in standard CMOS technology for PACS/Herschel

    NASA Astrophysics Data System (ADS)

    Merken, Patrick; Creten, Ybe; Putzeys, Jan; Souverijns, Tim; Van Hoof, Chris

    2004-10-01

    IMEC has designed, in the framework of the PACS project (for the European Herschel Space Observatory) the Cold Readout Electronics (CRE) for the Ge:Ga far-infrared detector array. Key specifications for the CRE were high linearity (3 %), low power consumption (80 μW for an 18 channel array), and very low noise (200 e-) at an operating temperature of 4.2 K (LHT - Liquid Helium Temperature). IMEC has implemented this circuit in a standard CMOS technology (AMIS 0.7 μm), which guarantees high production yield and uniformity, relatively easy availability of the technology and portability of the design. However, the drawback of this approach is the anomalous behavior of CMOS transistors at temperatures below 30-40K, known as kink and hysteresis effects and under certain conditions the presence of excess noise. These cryogenic phenomena disturb the normal functionality of commonly used circuits or building blocks like buffer amplifiers and opamps. We were able to overcome these problems and developed a library of digital and analog building blocks based on the modeling of cryogenic behavior, and on adapted design and layout techniques. These techniques have been validated in an automated cryogenic test set-ups developed at IMEC. We will present here in detail the full design of the 18 channel CRE circuit, its interface with the Ge:Ga sensor, and its electrical performance and demonstrate that all major specifications at 4.2 K were met. Future designs and implementations will be equally presented.

  19. Fixed-gain CMOS differential amplifiers with no external feedback for a wide temperature range

    NASA Astrophysics Data System (ADS)

    Michal, Vratislav; Klisnick, Geoffroy; Sou, Gérard; Redon, Michel; Kreisler, Alain J.; Dégardin, Annick F.

    2009-11-01

    We present original CMOS amplifiers designed for the DC to 10 MHz frequency range and operating in the 70-380 K temperature range. Aimed applications concern readout circuitry to be associated with THz bolometric pixels (either high- Tc superconducting or uncooled semiconducting), which require accuracy, low noise and low power consumption. Two designs are described that both exhibit high fixed-gain (40 dB) in a feedback-free architecture, which is based on a new low-transconductance composite transistor for an accurate control of this gain. Both amplifiers have been realized in a regular 0.35 μm CMOS process and tested in the 4.2-380 K temperature range, exhibiting good agreement between designed and measured characteristics.

  20. A Fast Multiple Sampling Method for Low-Noise CMOS Image Sensors With Column-Parallel 12-bit SAR ADCs.

    PubMed

    Kim, Min-Kyu; Hong, Seong-Kwan; Kwon, Oh-Kyong

    2015-12-26

    This paper presents a fast multiple sampling method for low-noise CMOS image sensor (CIS) applications with column-parallel successive approximation register analog-to-digital converters (SAR ADCs). The 12-bit SAR ADC using the proposed multiple sampling method decreases the A/D conversion time by repeatedly converting a pixel output to 4-bit after the first 12-bit A/D conversion, reducing noise of the CIS by one over the square root of the number of samplings. The area of the 12-bit SAR ADC is reduced by using a 10-bit capacitor digital-to-analog converter (DAC) with four scaled reference voltages. In addition, a simple up/down counter-based digital processing logic is proposed to perform complex calculations for multiple sampling and digital correlated double sampling. To verify the proposed multiple sampling method, a 256 × 128 pixel array CIS with 12-bit SAR ADCs was fabricated using 0.18 μm CMOS process. The measurement results shows that the proposed multiple sampling method reduces each A/D conversion time from 1.2 μs to 0.45 μs and random noise from 848.3 μV to 270.4 μV, achieving a dynamic range of 68.1 dB and an SNR of 39.2 dB.

  1. A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction

    PubMed Central

    Chang, Sheng-Ren; Chen, Hsin

    2009-01-01

    Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the ISFET is compatible with the standard CMOS technology. All materials above the gate-oxide are removed by simple, die-level post-CMOS process, allowing ions to modulate the lateral-bipolar current directly. By varying the gate-to-bulk voltage, the operation mode of the ISFET is controlled effectively, so is the noise performance measured and compared. Finally, the biasing conditions preferable for different low-noise applications are identified. Under the identified biasing condition, the signal-to-noise ratio of the ISFET as a pH sensor is proved to be improved by more than five times. PMID:22408508

  2. Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers

    DOEpatents

    DeGeronimo, Gianluigi

    2006-02-14

    A charge amplifier includes an amplifier, feedback circuit, and cancellation circuit. The feedback circuit includes a capacitor, inverter, and current mirror. The capacitor is coupled across the signal amplifier, the inverter is coupled to the output of the signal amplifier, and the current mirror is coupled to the input of the signal amplifier. The cancellation circuit is coupled to the output of the signal amplifier. A method of charge amplification includes providing a signal amplifier; coupling a first capacitor across the signal amplifier; coupling an inverter to the output of the signal amplifier; coupling a current mirror to the input of the signal amplifier; and coupling a cancellation circuit to the output of the signal amplifier. A front-end system for use with radiation sensors includes a charge amplifier and a current amplifier, shaping amplifier, baseline stabilizer, discriminator, peak detector, timing detector, and logic circuit coupled to the charge amplifier.

  3. Performance of a Y-Ba-Cu-O superconducting filter/GaAs low noise amplifier hybrid circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Toncich, S. S.; Chorey, C. M.; Bonetti, R. R.; Williams, A. E.

    1992-01-01

    A superconducting 7.3 GHz two-pole microstrip bandpass filter and a GaAs low noise amplifier (LNA) were combined into a hybrid circuit and characterized at liquid nitrogen temperatures. This superconducting/seismology circuit's performance was compared to a gold filter/GaAs LNA hybrid circuit. The superconducting filter/GaAs LNA hybrid circuit showed higher gain and lower noise figure than its gold counterpart.

  4. Performance of a Y-Ba-Cu-O superconducting filter/GaAs low noise amplifier hybrid circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Toncich, S. S.; Chorey, C. M.; Bonetti, R. R.; Williams, A. E.

    1992-01-01

    A superconducting 7.3 GHz two-pole microstrip bandpass filter and a GaAs low noise amplifier (LNA) were combined into an active circuit and characterized at liquid nitrogen temperatures. This superconducting/semiconducting circuit's performance was compared to a gold filter/GaAs LNA hybrid circuit. The superconducting filter/GaAs LNA hybrid circuit showed higher gain and lower noise figure than its gold counterpart.

  5. Low-noise correlation measurements based on software-defined-radio receivers and cooled microwave amplifiers.

    PubMed

    Nieminen, Teemu; Lähteenmäki, Pasi; Tan, Zhenbing; Cox, Daniel; Hakonen, Pertti J

    2016-11-01

    We present a microwave correlation measurement system based on two low-cost USB-connected software defined radio dongles modified to operate as coherent receivers by using a common local oscillator. Existing software is used to obtain I/Q samples from both dongles simultaneously at a software tunable frequency. To achieve low noise, we introduce an easy low-noise solution for cryogenic amplification at 600-900 MHz based on single discrete HEMT with 21 dB gain and 7 K noise temperature. In addition, we discuss the quantization effects in a digital correlation measurement and determination of optimal integration time by applying Allan deviation analysis.

  6. Low-noise correlation measurements based on software-defined-radio receivers and cooled microwave amplifiers

    NASA Astrophysics Data System (ADS)

    Nieminen, Teemu; Lähteenmäki, Pasi; Tan, Zhenbing; Cox, Daniel; Hakonen, Pertti J.

    2016-11-01

    We present a microwave correlation measurement system based on two low-cost USB-connected software defined radio dongles modified to operate as coherent receivers by using a common local oscillator. Existing software is used to obtain I/Q samples from both dongles simultaneously at a software tunable frequency. To achieve low noise, we introduce an easy low-noise solution for cryogenic amplification at 600-900 MHz based on single discrete HEMT with 21 dB gain and 7 K noise temperature. In addition, we discuss the quantization effects in a digital correlation measurement and determination of optimal integration time by applying Allan deviation analysis.

  7. A 3.5-4.5 GHz Complementary Metal-Oxide-Semiconductor Ultrawideband Receiver Frontend Low-Noise Amplifier with On-Chip Integrated Antenna for Interchip Communication

    NASA Astrophysics Data System (ADS)

    Azhari, Afreen; Kimoto, Kentaro; Sasaki, Nobuo; Kikkawa, Takamaro

    2010-04-01

    Chip-to-chip ultrawideband (UWB) wireless interconnections are essential for reducing resistance capacitance (RC) delay in wired interconnections and three-dimensional (3D) highly integrated packaging. In this study, we demonstrated a wireless interchip signal transmission between two on-chip meander antennas on printed circuit board (PCB) for 1 to 20 mm transmission distances where the low power gain of each antenna due to a lossy Si substrate has been amplified by a low-noise amplifier (LNA). The measured result shows that the LNA produces 26 dB of improvement in antenna power gain at 4.5 GHz on a lossy Si substrate. Moreover, a Gaussian monocycle pulse with a center frequency of 2.75 GHz was also received by an on-chip antenna and amplified by the LNA. The LNA was integrated with an on-chip antenna on a Si substrate with a resistivity of 10 Ω·cm using 180 nm complementary metal-oxide-semiconductor (CMOS) technology. The investigated system is required for future single chip transceiver front ends, integrated with an on-chip antenna for 3D mounting on a printed circuit (PC) board.

  8. Radio astronomy ultra-low-noise amplifier for operation at 91 cm wavelength in high RFI environment

    NASA Astrophysics Data System (ADS)

    Korolev, A. M.; Zakharenko, V. V.; Ulyanov, O. M.

    2016-02-01

    An ultra-low-noise input amplifier intended for a use in a radio telescope operating at 91 cm wavelength is presented. The amplifier noise temperatures are 12.8 ± 1.5 and 10.0 ± 1.5 K at ambient temperatures of 293 and 263 K respectively. The amplifier does not require cryogenic cooling. It can be quickly put in operation thus shortening losses in the telescope observation time. High linearity of the amplifier (output power at 1 dB gain compression P1dB ≥ 22 dBm, output third order intercept point OIP3 ≥ 37 dBm) enables the telescope operation in highly urbanized and industrialized regions. To obtain low noise characteristics along with high linearity, high-electron-mobility field-effect transistors were used in parallel in the circuit developed. The transistors used in the amplifier are cost-effective and commercially available. The circuit solution is recommended for similar devices working in ultra-high frequency band.

  9. Recent Advances In Cryogenic Monolithic Millimeter-wave Integrated Circuit (MMIC) Low Noise Amplifiers For Astrophysical Observations

    NASA Astrophysics Data System (ADS)

    Samoska, Lorene; Church, S.; Cleary, K.; Gaier, T.; Gawande, R.; Kangaslahti, P.; Lawrence, C.; Readhead, A.; Reeves, R.; Seiffert, M.; Sieth, M.; Varonen, M.; Voll, P.

    2012-05-01

    In this work, we discuss advances in high electron mobility transistor (HEMT) low noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) for use as front end amplifiers in ultra-low noise receivers. Applications include focal plane arrays for studying the polarization of the cosmic microwave background radiation and foreground separation, receiver arrays for molecular spectroscopy, and high redshift CO surveys for probing the epoch of reionization. Recent results and a summary of best indium phosphide (InP) low noise amplifier data will be presented. Cryogenic MMIC LNAs using state-of-the-art InP technology have achieved record performance, and have advantages over other detectors in the 30-300 GHz range. InP MMIC LNAs operate at room temperature and may achieve near-optimum performance at 20K, a temperature readily achieved with modern cryo-coolers. In addition, wide-bandwidth LNAs are suitable for heterodyne applications as well as direct detector applications. Recent results include Ka-band MMICs with 15K noise temperature performance, and Q-Band MMICs with on-wafer measured cryogenic noise of 12K at 38 GHz. In addition, W-Band amplifiers with 25K noise temperature at 95 GHz will be presented, as well as wide-band LNAs with noise temperature below 45K up to 116 GHz. At higher frequencies, we will discuss progress on MMIC LNAs and receiver modules in G-Band (140-220 GHz), where our group has achieved less than 60K receiver noise temperature at 166 GHz. We will address extending the high performance of these MMIC LNAs to even higher frequencies for spectroscopic surveys, and make projections on future performance given current trends. These MMIC amplifiers can play a key role in future ground-based and space-based instruments for astrophysical observations.

  10. Cryogenically cooled low-noise amplifier for radio-astronomical observations and centimeter-wave deep-space communications systems

    NASA Astrophysics Data System (ADS)

    Vdovin, V. F.; Grachev, V. G.; Dryagin, S. Yu.; Eliseev, A. I.; Kamaletdinov, R. K.; Korotaev, D. V.; Lesnov, I. V.; Mansfeld, M. A.; Pevzner, E. L.; Perminov, V. G.; Pilipenko, A. M.; Sapozhnikov, B. D.; Saurin, V. P.

    2016-01-01

    We report a design solution for a highly reliable, low-noise and extremely efficient cryogenically cooled transmit/receive unit for a large antenna system meant for radio-astronomical observations and deep-space communications in the X band. We describe our design solution and the results of a series of laboratory and antenna tests carried out in order to investigate the properties of the cryogenically cooled low-noise amplifier developed. The transmit/receive unit designed for deep-space communications (Mars missions, radio observatories located at Lagrangian point L2, etc.) was used in practice for communication with live satellites including "Radioastron" observatory, which moves in a highly elliptical orbit.

  11. A two-step A/D conversion and column self-calibration technique for low noise CMOS image sensors.

    PubMed

    Bae, Jaeyoung; Kim, Daeyun; Ham, Seokheon; Chae, Youngcheol; Song, Minkyu

    2014-07-04

    In this paper, a 120 frames per second (fps) low noise CMOS Image Sensor (CIS) based on a Two-Step Single Slope ADC (TS SS ADC) and column self-calibration technique is proposed. The TS SS ADC is suitable for high speed video systems because its conversion speed is much faster (by more than 10 times) than that of the Single Slope ADC (SS ADC). However, there exist some mismatching errors between the coarse block and the fine block due to the 2-step operation of the TS SS ADC. In general, this makes it difficult to implement the TS SS ADC beyond a 10-bit resolution. In order to improve such errors, a new 4-input comparator is discussed and a high resolution TS SS ADC is proposed. Further, a feedback circuit that enables column self-calibration to reduce the Fixed Pattern Noise (FPN) is also described. The proposed chip has been fabricated with 0.13 μm Samsung CIS technology and the chip satisfies the VGA resolution. The pixel is based on the 4-TR Active Pixel Sensor (APS). The high frame rate of 120 fps is achieved at the VGA resolution. The measured FPN is 0.38 LSB, and measured dynamic range is about 64.6 dB.

  12. A Two-Step A/D Conversion and Column Self-Calibration Technique for Low Noise CMOS Image Sensors

    PubMed Central

    Bae, Jaeyoung; Kim, Daeyun; Ham, Seokheon; Chae, Youngcheol; Song, Minkyu

    2014-01-01

    In this paper, a 120 frames per second (fps) low noise CMOS Image Sensor (CIS) based on a Two-Step Single Slope ADC (TS SS ADC) and column self-calibration technique is proposed. The TS SS ADC is suitable for high speed video systems because its conversion speed is much faster (by more than 10 times) than that of the Single Slope ADC (SS ADC). However, there exist some mismatching errors between the coarse block and the fine block due to the 2-step operation of the TS SS ADC. In general, this makes it difficult to implement the TS SS ADC beyond a 10-bit resolution. In order to improve such errors, a new 4-input comparator is discussed and a high resolution TS SS ADC is proposed. Further, a feedback circuit that enables column self-calibration to reduce the Fixed Pattern Noise (FPN) is also described. The proposed chip has been fabricated with 0.13 μm Samsung CIS technology and the chip satisfies the VGA resolution. The pixel is based on the 4-TR Active Pixel Sensor (APS). The high frame rate of 120 fps is achieved at the VGA resolution. The measured FPN is 0.38 LSB, and measured dynamic range is about 64.6 dB. PMID:24999716

  13. Low noise parametric amplifiers for radio astronomy observations at 18-21 cm wavelength

    NASA Technical Reports Server (NTRS)

    Kanevskiy, B. Z.; Veselov, V. M.; Strukov, I. A.; Etkin, V. S.

    1974-01-01

    The principle characteristics and use of SHF parametric amplifiers for radiometer input devices are explored. Balanced parametric amplifiers (BPA) are considered as the SHF signal amplifiers allowing production of the amplifier circuit without a special filter to achieve decoupling. Formulas to calculate the basic parameters of a BPA are given. A modulator based on coaxial lines is discussed as the input element of the SHF. Results of laboratory tests of the receiver section and long-term stability studies of the SHF sector are presented.

  14. Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

    NASA Astrophysics Data System (ADS)

    Durini, Daniel; Spickermann, Andreas; Mahdi, Rana; Brockherde, Werner; Vogt, Holger; Grabmaier, Anton; Hosticka, Bedrich J.

    2010-12-01

    In this work a theoretical concept and simulations are presented for a novel lateral drift-field photodetector pixel to be fabricated in a 0.35 μm CMOS process. The proposed pixel consists of a specially designed n-well with a non-uniform lateral doping profile that follows a square-root spatial dependence. "Buried" MOS capacitor-based collection-gate, a transfer-gate, and an n-type MOSFET source/drain n + floating-diffusion serve to realize a non-destructive readout. The pixel readout is performed using an in-pixel source-follower pixel buffer configuration followed by an output amplifier featuring correlated double-sampling. The concentration gradient formed in the n-well employs a single extra implantation step in the 0.35 μm CMOS process mentioned and requires only a single extra mask. It generates an electrostatic potential gradient, i.e. a lateral drift-field, in the photoactive area of the pixel which enables high charge transfer speed and low image-lag. According to the simulation results presented, charge transfer times of less than 3 ns are to be expected.

  15. Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

    SciTech Connect

    Drung, D.; Krause, C.; Becker, U.; Scherer, H.; Ahlers, F. J.

    2015-02-15

    An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA’s transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

  16. OLA, A low-noise bipolar amplifier for the readout of Silicon Drift Detectors

    NASA Astrophysics Data System (ADS)

    Dabrowski, W.; Białas, W.; Bonazzola, G.; Bonvicini, V.; Ceretto, F.; Giubellino, P.; Idzik, M.; Prest, M.; Riccati, L.; Zampa, N.

    1995-11-01

    A very low noise, 32-channel preamplifier/shaper chip has been designed for the analogue readout of silicon detectors. The circuit has been optimised in view of the operation of Silicon Drift Detectors, which have very low capacitance and produce gaussian signals of σ up to ˜ 100 ns. The chip (OLA) has been designed and manufactured using the SHPi full-custom bipolar process by Tektronix. Each channel is composed by a preamplifier, a shaper and a symmetrical line driver, which allows to drive either a positive and a negative single ended output separately on 50 Ω impedance or a differential twisted pair. The intrinsic peaking time of the circuit is ˜ 60 ns, and the noise is below 250 electrons at zero input load capacitance. The power consumption is 2 mW/channel, mostly due to the output driver.

  17. Evaluation of biasing and protection circuitry components for cryogenic MMIC low-noise amplifiers

    NASA Astrophysics Data System (ADS)

    Lamb, James W.

    2014-05-01

    Millimeter-wave integrated circuits with gate lengths as short as 35 nm are demonstrating extremely low-noise performance, especially when cooled to cryogenic temperatures. These operate at low voltages and are susceptible to damage from electrostatic discharge and improper biasing, as well as being sensitive to low-level interference. Designing a protection circuit for low voltages and temperatures is challenging because there is very little data available on components that may be suitable. Extensive testing at low temperatures yielded a set of components and a circuit topology that demonstrates the required level of protection for critical MMICs and similar devices. We present a circuit that provides robust protection for low voltage devices from room temperature down to 4 K.

  18. Energy efficient low-noise neural recording amplifier with enhanced noise efficiency factor.

    PubMed

    Majidzadeh, V; Schmid, A; Leblebici, Y

    2011-06-01

    This paper presents a neural recording amplifier array suitable for large-scale integration with multielectrode arrays in very low-power microelectronic cortical implants. The proposed amplifier is one of the most energy-efficient structures reported to date, which theoretically achieves an effective noise efficiency factor (NEF) smaller than the limit that can be achieved by any existing amplifier topology, which utilizes a differential pair input stage. The proposed architecture, which is referred to as a partial operational transconductance amplifier sharing architecture, results in a significant reduction of power dissipation as well as silicon area, in addition to the very low NEF. The effect of mismatch on crosstalk between channels and the tradeoff between noise and crosstalk are theoretically analyzed. Moreover, a mathematical model of the nonlinearity of the amplifier is derived, and its accuracy is confirmed by simulations and measurements. For an array of four neural amplifiers, measurement results show a midband gain of 39.4 dB and a -3-dB bandwidth ranging from 10 Hz to 7.2 kHz. The input-referred noise integrated from 10 Hz to 100 kHz is measured at 3.5 μVrms and the power consumption is 7.92 μW from a 1.8-V supply, which corresponds to NEF = 3.35. The worst-case crosstalk and common-mode rejection ratio within the desired bandwidth are - 43.5 dB and 70.1 dB, respectively, and the active silicon area of each amplifier is 256 μm × 256 μm in 0.18-μm complementary metal-oxide semiconductor technology.

  19. Low-noise wide-band amplifiers for stochastic beam cooling experiments

    NASA Astrophysics Data System (ADS)

    Leskovar, B.; Lo, C. C.

    1982-09-01

    Noise characteristics of the continuous wave broadband amplifier systems for stochastic beam cooling experiments are presented. The noise performance, bandwidth capability and gain stability of components used in these amplifiers are summarized and compared in the 100 MHz to 40 GHz frequency range. This includes bipolar and field effect transistors, parametric amplifier, Schottky diode mixer and maser. Measurements of the noise characteristics and scattering parameters of variety GaAs FETs as a function of ambient temperature are also given. Performance data and design information are presented on a broadband 150-500 MHz preamplifier with noise temperature of approximately 350 K at ambient temperature of 200 K. Preamplifier stability based on scattering parameters concept is analyzed.

  20. Low-noise Raman fiber amplifier pumped by semiconductor disk laser.

    PubMed

    Chamorovskiy, A; Rautiainen, J; Rantamäki, A; Okhotnikov, O G

    2011-03-28

    A 1.3 µm Raman fiber amplifier pumped by 1.22 µm semiconductor disk laser in co-propagation geometry is demonstrated. Measured relative intensity noise of -148 dB/Hz over frequency range up to 3.5 GHz was measured at 900 mW of pump power. 9 dB gain was achieved with co-propagating pumping geometry with less than 2 dB additional noise induced by amplifier to the signal. Nearly shot-noise-limited operation of semiconductor disk laser combined with the diffraction-limited beam allows for efficient core-pumping of the single-mode fiber Raman amplifiers and represents a highly practical approach which takes full advantage of co-propagating pumping.

  1. Low noise, tunable Ho:fiber soliton oscillator for Ho:YLF amplifier seeding

    NASA Astrophysics Data System (ADS)

    Li, Peng; Ruehl, Axel; Bransley, Colleen; Hartl, Ingmar

    2016-06-01

    We present a passively mode-locked, tunable soliton Ho:fiber ring oscillator, optimized for seeding of holmium-doped yttrium lithium flouride (Ho:YLF) amplifiers. The oscillator is independently tunable in central wavelength and spectral width from 2040 to 2070 nm and from 5 to 10 nm, respectively. At all settings the pulse energy within the soliton is around 800 pJ. The soliton oscillator was optimized to fully meet the spectral requirements for seeding Ho:YLF amplifiers. Its Kelly sidebands are located outside the amplifier gain spectrum, resulting in a train of about 1 ps long pedestal-free pulses with relative intensity noise of only 0.13% RMS when integrated from 1 Hz to Nyquist frequency.

  2. A low-noise and fast pre-amplifier and readout system for SiPMs

    NASA Astrophysics Data System (ADS)

    Biroth, M.; Achenbach, P.; Downie, E.; Thomas, A.

    2015-07-01

    To operate silicon photomultipliers (SiPMs) in a demanding environment with large temperature gradients, different amplifier concepts were characterized by analyzing SiPM pulse-shapes and charge distributions. A fully differential 4-wire SiPM pre-amplifier with separated tracks for the bias voltage and with good common-mode noise suppression was developed and successfully tested. To achieve highest single-pixel resolutions an online after-pulse and pile-up suppression was realized with fast readout electronics based on digital filters.

  3. Low-noise two-wired buffer electrodes for bioelectric amplifiers.

    PubMed

    Degen, Thomas; Torrent, Simon; Jäckel, Heinz

    2007-07-01

    Active buffer electrodes are known to improve the immunity of bioelectric recordings against power line interferences. A survey of published work reveals that buffer electrodes are almost exclusively designed using operational amplifiers (opamps). In this paper, we discuss the advantage of utilizing a single transistor instead. This allows for a simple electrode, which is small and requires only two wires. In addition, a single transistor adds considerably less noise when compared to an opamp with the same power consumption. We then discuss output resistance and gain as well as their respective effect on the common mode rejection ratio (CMRR). Finally, we demonstrate the use of two-wired buffer electrodes for a bioelectric amplifier.

  4. FM notch filter in front - and - behind the low noise amplifier of a Callisto Radio Spectrometer in Gauribidanur, India

    NASA Astrophysics Data System (ADS)

    Monstein, C.

    2014-03-01

    In the framework of IHY2007 a Callisto spectrometer [Benz(2004)] was installed and set into operation at the location of the solar heliograph in Gauribidanur, India. At that time the level of radio frequency interference (RFI) was amazingly low. In recent years more and more FM broadcast transmitters were installed with high power compared to the requirements of radio astronomical observations. So, the spectral observations with Callisto experienced more and more interference by these FM transmitters. Recently an FM-notch filter was installed between the low noise amplifier and Callisto, but it did not work out. The notch filter was then moved to the input of the LNA and the result was much better, as expected from theoretical concepts.

  5. Comparison of cryogenic W band low noise amplifier based on different III-V HEMT foundry process and technologies

    NASA Astrophysics Data System (ADS)

    Valenziano, L.; Zannoni, M.; Mariotti, S.; Cremonini, A.; De Rosa, A.; Banfi, S.; Baó, A.; Gervasi, M.; Limiti, E.; Passerini, A.; Schiavone, F.

    2014-07-01

    We present the results of a development activity for cryogenic Low Noise Amplifiers based on HEMT technology for ground based and space-borne application. We have developed and realized two LNA design in W band, based on m-HEMT technology. MMIC chips have been manufactured by European laboratories and companies and assembled in test modules by our team. We compare performances with other technologies and manufacturers. LNA RF properties (noise figures, S-parameters) have been measured at room and cryogenic temperature and test results are reported in this paper. Performance are compared with those of state-of-the-art devices, as available in the literature. Strengths and improvements of this project are also discussed.

  6. A fast, low power and low noise charge sensitive amplifier ASIC for a UV imaging single photon detector

    NASA Astrophysics Data System (ADS)

    Seljak, A.; Cumming, H. S.; Varner, G.; Vallerga, J.; Raffanti, R.; Virta, V.

    2017-04-01

    NASA has funded, through their Strategic Astrophysics Technology (SAT) program, the development of a cross strip (XS) microchannel plate (MCP) detector with the intention to increase its technology readiness level (TRL), enabling prototyping for future NASA missions. One aspect of the development is to convert the large and high powered laboratory Parallel Cross Strip (PXS) readout electronics into application specific integrated circuits (ASICs) to decrease their mass, volume, and power consumption (all limited resources in space) and to make them more robust to the environments of rocket launch and space. The redesign also foresees to increase the overall readout event rate, and decrease the noise contribution of the readout system. This work presents the design and verification of the first stage for the new readout system, the 16 channel charge sensitive amplifier ASIC, called the CSAv3. The single channel amplifier is composed of a charge sensitive amplifier (pre-amplifier), a pole zero cancellation circuit and a shaping amplifier. An additional output stage buffer allows polarity selection of the output analog signal. The operation of the amplifier is programmable via serial bus. It provides an equivalent noise charge (ENC) of around 600 e^- and a baseline gain of 10 mV/fC. The full scale pulse shaped output signal is confined within 100 ns, without long recovery tails, enabling up to 10 MHz periodic event rates without signal pile up. This ASIC was designed and fabricated in 130 nm, TSMC CMOS 1.2 V technology. In addition, we briefly discuss the construction of the readout system and plans for the future work.

  7. Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade

    NASA Astrophysics Data System (ADS)

    Liang, Z.; Affolder, A.; Arndt, K.; Bates, R.; Benoit, M.; Di Bello, F.; Blue, A.; Bortoletto, D.; Buckland, M.; Buttar, C.; Caragiulo, P.; Das, D.; Dopke, J.; Dragone, A.; Ehrler, F.; Fadeyev, V.; Galloway, Z.; Grabas, H.; Gregor, I. M.; Grenier, P.; Grillo, A.; Hoeferkamp, M.; Hommels, L. B. A.; Huffman, B. T.; John, J.; Kanisauskas, K.; Kenney, C.; Kramberger, J.; Mandić, I.; Maneuski, D.; Martinez-Mckinney, F.; McMahon, S.; Meng, L.; Mikuž, M.; Muenstermann, D.; Nickerson, R.; Peric, I.; Phillips, P.; Plackett, R.; Rubbo, F.; Segal, J.; Seidel, S.; Seiden, A.; Shipsey, I.; Song, W.; Stanitzki, M.; Su, D.; Tamma, C.; Turchetta, R.; Vigani, L.; Volk, J.; Wang, R.; Warren, M.; Wilson, F.; Worm, S.; Xiu, Q.; Zhang, J.; Zhu, H.

    2016-09-01

    This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for the CMOS sensor is 10 times lower than for a conventional planar sensor, it is crucial to integrate a low noise built-in amplifier on the sensor chip to improve the signal to noise ratio of the system. As part of the investigation for the ATLAS strip detector upgrade, a test chip that comprises several pixel arrays with different geometries, as well as standalone built-in amplifiers and built-in amplifiers in pixel arrays has been fabricated in a 0.35 μm high-voltage CMOS process. Measurements of the gain and the noise of both the standalone amplifiers and built-in amplifiers in pixel arrays were performed before and after gamma radiation of up to 60 Mrad. Of special interest is the variation of the noise as a function of the sensor capacitance. We optimized the configuration of the amplifier for a fast rise time to adapt to the LHC bunch crossing period of 25 ns, and measured the timing characteristics including jitter. Our results indicate an adequate amplifier performance for monolithic structures used in HV-CMOS technology. The results have been incorporated in the next submission of a large-structure chip.

  8. Low Noise Optical Amplifiers

    DTIC Science & Technology

    2010-05-01

    Boggio , J. R. Windmiller, M. Knutzen, R.Jiang, C. Bres, N. Alic, B. Stossel, K. Rottwitt and S. Radic, “730 nm optical parametric conversion from near...to short wave infrared band,” Optics Express, vol. 16, No. 8, p 5435, Apr. 2008 J.M. Chavez Boggio , M. Knutzen, R.Jiang, C. Bres, N. Alic, J. R...Lightwave Technol. 24, 3471–3479 (2006). 10. J. M. Chávez Boggio , P. Dainese, F. Karlsson, and H. L. Fragnito, “Broad-band 88% efficient two-pump fiber

  9. Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier

    PubMed Central

    Han, Seong-Tae; Baek, Donghyun

    2017-01-01

    We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m2 input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB. PMID:28891927

  10. About the choice of initial voltages in the synchronous sense amplifier for CMOS memory

    NASA Astrophysics Data System (ADS)

    Gerasimov, Y. M.; Grigoryev, N. G.; Kobylyatskiy, A. V.

    2016-10-01

    It was shown that the choice of initial voltage sat the nodes of CMOS memory synchronous sense amplifiers has a significant effect on the amplifier data sensitivity. The research of the sense amplifier sensitivity with various initial conditions was performed. According to the results we gave some recommendations about the choice of initial voltages in synchronous sense amplifiers.

  11. Design of Low-Noise Output Amplifiers for P-channel Charge-Coupled Devices Fabricated on High-Resistivity Silicon

    SciTech Connect

    Haque, S; Frost, F Dion R.; Groulx, R; Holland, S E; Karcher, A; Kolbe, W F; Roe, N A; Wang, G; Yu, Y

    2011-12-22

    We describe the design and optimization of low-noise, single-stage output amplifiers for p-channel charge-coupled devices (CCDs) used for scientific applications in astronomy and other fields. The CCDs are fabricated on high-resistivity, 4000–5000 -cm, n-type silicon substrates. Single-stage amplifiers with different output structure designs and technologies have been characterized. The standard output amplifier is designed with an n{sup +} polysilicon gate that has a metal connection to the sense node. In an effort to lower the output amplifier readout noise by minimizing the capacitance seen at the sense node, buried-contact technology has been investigated. In this case, the output transistor has a p{sup +} polysilicon gate that connects directly to the p{sup +} sense node. Output structures with buried-contact areas as small as 2 μm × 2 μm are characterized. In addition, the geometry of the source-follower transistor was varied, and we report test results on the conversion gain and noise of the various amplifier structures. By use of buried-contact technology, better amplifier geometry, optimization of the amplifier biases and improvements in the test electronics design, we obtain a 45% reduction in noise, corresponding to 1.7 e{sup -} rms at 70 kpixels/sec.

  12. ALDO: A radiation-tolerant, low-noise, adjustable low drop-out linear regulator in 0.35 μm CMOS technology

    NASA Astrophysics Data System (ADS)

    Carniti, P.; Cassina, L.; Gotti, C.; Maino, M.; Pessina, G.

    2016-07-01

    In this work we present ALDO, an adjustable low drop-out linear regulator designed in AMS 0.35 μm CMOS technology. It is specifically tailored for use in the upgraded LHCb RICH detector in order to improve the power supply noise for the front end readout chip (CLARO). ALDO is designed with radiation-tolerant solutions such as an all-MOS band-gap voltage reference and layout techniques aiming to make it able to operate in harsh environments like High Energy Physics accelerators. It is capable of driving up to 200 mA while keeping an adequate power supply filtering capability in a very wide frequency range from 10 Hz up to 100 MHz. This property allows us to suppress the noise and high frequency spikes that could be generated by a DC/DC regulator, for example. ALDO also shows a very low noise of 11.6 μV RMS in the same frequency range. Its output is protected with over-current and short detection circuits for a safe integration in tightly packed environments. Design solutions and measurements of the first prototype are presented.

  13. A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

    NASA Astrophysics Data System (ADS)

    Lockerbie, N. A.; Tokmakov, K. V.

    2014-11-01

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m-1(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

  14. A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in Advanced Laser Interferometer Gravitational wave Observatory suspensions.

    PubMed

    Lockerbie, N A; Tokmakov, K V

    2014-11-01

    This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations-this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m(-1)(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

  15. Extension of non-invasive EEG into the kHz range for evoked thalamocortical activity by means of very low noise amplifiers.

    PubMed

    Scheer, H J; Fedele, T; Curio, G; Burghoff, M

    2011-12-01

    Ultrafast electroencephalographic signals, having frequencies above 500 Hz, can be observed in somatosensory evoked potential measurements. Usually, these recordings have a poor signal-to-noise ratio (SNR) because weak signals are overlaid by intrinsic noise of much higher amplitude like that generated by biological sources and the amplifier. As an example, recordings at the scalp taken during electrical stimulation of the median nerve show a 600 Hz burst with submicro-volt amplitudes which can be extracted from noise by the use of massive averaging and digital signal processing only. We have investigated this signal by means of a very low noise amplifier made in-house (minimal voltage noise 2.7 nV Hz(-1/2), FET inputs). We examined how the SNR of the data is altered by the bandwidth and the use of amplifiers with different intrinsic amplifier noise levels of 12 and 4.8 nV Hz(-1/2), respectively. By analyzing different frequency contributions of the signal, we found an extremely weak 1 kHz component superimposed onto the well-known 600 Hz burst. Previously such high-frequency electroencephalogram responses around 1 kHz have only been observed by deep brain electrodes implanted for tremor therapy of Parkinson patients. For the non-invasive measurement of such signals, we recommend that amplifier noise should not exceed 4 nV Hz(-1/2).

  16. Development of a Low-Noise High Common-Mode-Rejection Instrumentation Amplifier. M.S. Thesis

    NASA Technical Reports Server (NTRS)

    Rush, Kenneth; Blalock, T. V.; Kennedy, E. J.

    1975-01-01

    Several previously used instrumentation amplifier circuits were examined to find limitations and possibilities for improvement. One general configuration is analyzed in detail, and methods for improvement are enumerated. An improved amplifier circuit is described and analyzed with respect to common mode rejection and noise. Experimental data are presented showing good agreement between calculated and measured common mode rejection ratio and equivalent noise resistance. The amplifier is shown to be capable of common mode rejection in excess of 140 db for a trimmed circuit at frequencies below 100 Hz and equivalent white noise below 3.0 nv/square root of Hz above 1000 Hz.

  17. A novel low-noise linear-in-dB intermediate frequency variable-gain amplifier for DRM/DAB tuners

    NASA Astrophysics Data System (ADS)

    Keping, Wang; Zhigong, Wang; Jianzheng, Zhou; Xuemei, Lei; Mingzhu, Zhou

    2009-03-01

    A broadband CMOS intermediate frequency (IF) variable-gain amplifier (VGA) for DRM/DAB tuners is presented. The VGA comprises two cascaded stages: one is for noise-canceling and another is for signal-summing. The chip is fabricated in a standard 0.18 μm 1P6M RF CMOS process of SMIC. Measured results show a good linear-in-dB gain characteristic in 28 dB dynamic gain range of -10 to 18 dB. It can operate in the frequency range of 30-700 MHz and consumes 27 mW at 1.8 V supply with the on-chip test buffer. The minimum noise figure is only 3.1 dB at maximum gain and the input-referred 1 dB gain compression point at the minimum gain is -3.9 dBm.

  18. Low-noise detector and amplifier design for 100 ns direct detection CO{sub 2} LIDAR receiver

    SciTech Connect

    Cafferty, M.M.; Cooke, B.J.; Laubscher, B.E.; Olivas, N.L.; Fuller, K.

    1997-06-01

    The development and test results of a prototype detector/amplifier design for a background limited, pulsed 100 ns, 10--100 kHz repetition rate LIDAR/DIAL receiver system are presented. Design objectives include near-matched filter detection of received pulse amplitude and round trip time-of-flight, and the elimination of excess correlated detector/amplifier noise for optimal pulse averaging. A novel pole-zero cancellation amplifier, coupled with a state-of-the-art SBRC (Santa Barbara Research Center) infrared detector was implemented to meet design objectives. The pole-zero cancellation amplifier utilizes a tunable, pseudo-matched filter technique to match the width of the laser pulse to the shaping time of the filter for optimal SNR performance. Low frequency correlated noise, (l/f and drift noise) is rejected through a second order high gain feedback loop. The amplifier also employs an active detector bias stage minimizing detector drift. Experimental results will be provided that demonstrate near-background limited, 100 ns pulse detection performance given a 8.5--11.5 {micro}m (300 K B.B.) radiant background, with the total noise floor spectrally white for optimal pulse averaging efficiency.

  19. Manufacturable Tri-Stack AlSb/InAs HEMT Low-Noise Amplifiers Using Wafer-Level-Packaging Technology for Light-Weight and Ultralow-Power Applications

    DTIC Science & Technology

    2009-05-01

    operation , low knee voltage (VK), low on-resistance (RON) and high transconductance (gm), which are important for ultralow-power and high-frequency...In0.4Al0.6As barrier and gate metallization is critical for high device yield. MANUFACTURABLE TRI-STACK ALSB/INAS HEMT LOW-NOISE AMPLIFIERS USING WAFER-LEVEL...nrl.navy.mil Abstract—A wafer-level-packaging technology was used to integrate the 0.1 m AlSb/InAs HEMT low-noise amplifiers with power amplifiers

  20. Single-polarization optical low-noise pre-amplified receiver for heavily coded optical communications links

    NASA Astrophysics Data System (ADS)

    Roth, Jeffrey M.; Masurkar, Amrita; Scalesse, Vincent; Minch, Jeffrey R.; Walther, Frederick G.; Savage, Shelby J.; Ulmer, Todd G.

    2015-03-01

    We report a single-polarization, optical low-noise pre-amplfier (SP-OLNA) that enhances the receiver sensitivity of heavily-coded 1.55-μm optical communication links. At channel bit-error ratios of approximately 10%, the erbium-doped SP-OLNA provides an approximately 1.0-dB receiver sensitivity enhancement over a conventional two-polarization pre-amplfier. The SP-OLNA includes three gain stages, each followed by narrow-band athermal fiber Bragg gratings. This cascaded fiter is matched to a return-to-zero, 2.88-Gb/s, variable burst-mode, differential phase shift keying (DPSK) waveform. The SP-OLNA enhancement of approximately 1.0 dB is demonstrated over a range of data rates, from the full 2.88-Gb/s (non-burst) data rate, down to a 1/40th burst rate (72 Mb/s). The SP-OLNA'sfirst stage of ampli_cation is a single-polarization gain block constructed from polarization-maintaining (PM) fiber components, PM erbium gain fiber, and a PM integrated pump coupler and polarizer. This first stage sets the SP-OLNA's noise figure, measured at 3.4 dB. Two subsequent non-PM gain stages allow the SP-OLNA to provide an overall gain of 78 dB to drive a DPSK demodulator receiver. This receiver is comprised of a delay-line interferometer and balanced photo-receiver. The SP-OLNA is packaged into a compact, 5"x7"x1.6" volume, which includes an electronic digital interface to control and monitor pump lasers, optical switches, and power monitors.

  1. Low noise gain-clamped L-band erbium-doped fiber amplifier by utilizing fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Wang, Tianshu; Guo, Yubin; Yan, Hongwei; Wang, Yuhang; Wang, Ke

    2006-11-01

    A novel gain-clamped long wavelength band (L-band) erbium-doped fiber amplifier (EDFA) is proposed and experimented by using a fiber Bragg grating (FBG) at the input end of the amplifier. This design provides a good gain clamping and decreases noise effectively. It uses two sections of erbium-doped fiber (EDF) pumped by a 1480-nm laser diode (LD) for higher efficiency and lower noise figure (NF). The gain is clamped at 23 dB with a variation of 0.5 dB from input signal power of -30 to -8 dBm for 1589 nm and NF below 5 dB is obtained. At the longer wavelength in L-band higher gain is also obtained and the gain is clamped at 16 dB for 1614 nm effectively. Because the FBG injects a portion of backward amplified spontaneous emission (ASE) back into the system, the gain enhances 5 dB with inputting small signal.

  2. Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Seongjae Cho,; Hee-Sauk Jhon,; Jung Hoon Lee,; Se Hwan Park,; Hyungcheol Shin,; Byung-Gook Park,

    2010-04-01

    In this study, a full-range approach from device level to circuit level design is performed for RF application of silicon nanowire (SNW) metal-oxide-semiconductor field effect transistors (MOSFETs). Both DC and AC analyses have been conducted to confirm the advantages of an SNW MOSFET over the conventional planar (CPL) MOSFET device having dimensional equivalence. Besides the intrinsic characteristic parameters, the extrinsic resistance and capacitance caused by wiring components are extracted from each device. On the basis of these intrinsic and extrinsic parameters, a multi-fingered 5.8 GHz low-noise amplifier (LNA) design adopting SNW MOSFETs has been achieved, which shows an improved gain of 17.5 dB and a noise figure of 3.1 dB over a CPL MOSFET LNA.

  3. Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor

    NASA Astrophysics Data System (ADS)

    McCulloch, Mark A.; Melhuish, Simon J.; Piccirillo, Lucio

    2015-01-01

    An approach to enhancing the noise performance of an InP monolithic microwave integrated circuit (MMIC)-based low noise amplifiers (LNA) through the use of a discrete 100-nm gate length InP high electron mobility transistor is outlined. This LNA, known as a transistor in front of MMIC (T + MMIC) LNA, possesses a gain in excess of 40 dB and an average noise temperature of 9.4 K across the band 27 to 33 GHz at a physical temperature of 8 K. This compares favorably with 14.5 K for an LNA containing an equivalent MMIC. A simple advanced design system model offering further insights into the operation of the LNA is also presented and the LNA is compared with the current state-of-the-art Planck LFI LNAs.

  4. Advances In Cryogenic Monolithic Millimeter-wave Integrated Circuit (MMIC) Low Noise Amplifiers For CO Intensity Mapping and ALMA Band 2

    NASA Astrophysics Data System (ADS)

    Samoska, Lorene; Cleary, Kieran; Church, Sarah E.; Cuadrado-Calle, David; Fung, Andy; gaier, todd; gawande, rohit; Kangaslahti, Pekka; Lai, Richard; Lawrence, Charles R.; Readhead, Anthony C. S.; Sarkozy, Stephen; Seiffert, Michael D.; Sieth, Matthew

    2016-01-01

    We will present results of the latest InP HEMT MMIC low noise amplifiers in the 30-300 GHz range, with emphasis on LNAs and mixers developed for CO intensity mapping in the 40-80 GHz range, as well as MMIC LNAs suitable for ALMA Band 2 (67-90 GHz). The LNAs have been developed together with NGC in a 35 nm InP HEMT MMIC process. Recent results and a summary of best InP low noise amplifier data will be presented. This work describes technologies related to the detection and study of highly redshifted spectral lines from the CO molecule, a key tracer for molecular hydrogen. One of the most promising techniques for observing the Cosmic Dawn is intensity mapping of spectral-spatial fluctuations of line emission from neutral hydrogen (H I), CO, and [C II]. The essential idea is that instead of trying to detect line emission from individual galaxies, one measures the total line emission from a number of galaxies within the volume defined by a spectral-spatial pixel. Fluctuations from pixel to pixel trace large scale structure, and the evolution with redshift is revealed as a function of receiver frequency. A special feature of CO is the existence of multiple lines with a well-defined frequency relationship from the rotational ladder, which allows the possibility of cleanly separating the signal from other lines or foreground structure at other redshifts. Making use of this feature (not available to either HI or [C II] measurements) requires observing multiple frequencies, including the range 40-80 GHz, much of which is inaccessible from the ground or balloons.Specifically, the J=1->0 transition frequency is 115 GHz; J=2->1 is 230 GHz; J=3->2 is 345 GHz, etc. At redshift 7, these lines would appear at 14.4, 28.8, and 43.2 GHz, accessible from the ground. Over a wider range of redshifts, from 3 to 7, these lines would appear at frequencies from 14 to 86 GHz. A ground-based CO Intensity mapping experiment, COMAP, will utilize InP-based HEMT MMIC amplifier front ends in the

  5. Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers

    NASA Astrophysics Data System (ADS)

    Gupta, Neha; Chaujar, Rishu

    2016-08-01

    In this paper, we have investigated the small-signal behaviour and RF noise performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET, and the results so obtained are simultaneously compared with SiNW and conventional MOSFET at THz frequency range. This work examines reflection and transmission coefficients, noise conductance, minimum noise figure and cross-correlation factor. Results reveal significant reduction in input/output reflection coefficient and an increase in forward/reverse transmission coefficient owing to improved transconductance in GEWE-SiNW in comparison with conventional counterparts. It is also observed that minimum noise figure and noise conductance of GEWE-SiNW is reduced by 17.4 and 31.2 %, respectively, in comparison with SiNW, thus fortifying its potential application for low-noise amplifiers (LNAs) at radio frequencies. Moreover, the efficacy of gate metal workfunction engineering is also studied and the results validate that tuning of workfunction difference results further improvement in device small-signal behaviour and noise performance.

  6. Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

    SciTech Connect

    Takano, H.; Hosogi, K.; Kato, T.

    1995-05-01

    A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs.

  7. CMOS Optoelectronic Lock-In Amplifier With Integrated Phototransistor Array.

    PubMed

    An Hu; Chodavarapu, Vamsy P

    2010-10-01

    We describe the design and development of an optoelectronic lock-in amplifier (LIA) for optical sensing and spectroscopy applications. The prototype amplifier is fabricated using Taiwan Semiconductor Manufacturing Co. complementary metal-oxide semiconductor 0.35-μm technology and uses a phototransistor array (total active area is 400 μm × 640μm) to convert the incident optical signals into electrical currents. The photocurrents are then converted into voltage signals using a transimpedance amplifier for subsequent convenient signal processing by the LIA circuitry. The LIA is optimized to be operational at 20-kHz modulation frequency but is operational in the frequency range from 13 kHz to 25 kHz. The system is tested with a light-emitting diode (LED) as the light source. The noise and signal distortions are suppressed with filters and a phase-locked loop (PLL) implemented in the LIA. The output dc voltage of the LIA is proportional to the incident optical power. The minimum measured dynamic reserve and sensitivity are 1.31 dB and 34 mV/μW, respectively. The output versus input relationship has shown good linearity. The LIA consumes an average power of 12.79 mW with a 3.3-V dc power supply.

  8. 2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain

    PubMed Central

    2014-01-01

    We propose a mode-locking method optimized for the cascode structure of an RF CMOS power amplifier. To maximize the advantage of the typical mode-locking method in the cascode structure, the input of the cross-coupled transistor is modified from that of a typical mode-locking structure. To prove the feasibility of the proposed structure, we designed a 2.4 GHz CMOS power amplifier with a 0.18 μm RFCMOS process for polar transmitter applications. The measured power added efficiency is 34.9%, while the saturated output power is 23.32 dBm. The designed chip size is 1.4 × 0.6 mm2. PMID:25045755

  9. Analysis of CMOS Transconductance Amplifiers for Sampling Mixers

    NASA Astrophysics Data System (ADS)

    Li, Ning; Chaivipas, Win; Okada, Kenichi; Matsuzawa, Akira

    In this paper the transfer function of a system with windowed current integration is discussed. This kind of integration is usually used in a sampling mixer and the current is generated by a transconductance amplifier (TA). The parasitic capacitance (Cp) and the output resistance of the TA (Ro,TA) before the sampling mixer heavily affect the performance. Calculations based on a model including the parasitic capacitance and the output resistance of the TA is carried out. Calculation results show that due to the parasitic capacitance, a notch at the sampling frequency appears, which is very harmful because it causes the gain near the sampling frequency to decrease greatly. The output resistance of the TA makes the depth of the notches shallow and decreases the gain near the sampling frequency. To suppress the effect of Cp and Ro,TA, an operational amplifier is introduced in parallel with the sampling capacitance (Cs). Simulation results show that there is a 17dB gain increase while Cs is 1pF, gm is 9mS, N is 8 with a clock rate of 800MHz.

  10. Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

    SciTech Connect

    Scarcella, Carmelo; Tosi, Alberto Villa, Federica; Tisa, Simone; Zappa, Franco

    2013-12-15

    We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 μm active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

  11. Scalable, Low-Noise Architecture for Integrated Terahertz Imagers

    NASA Astrophysics Data System (ADS)

    Gergelyi, Domonkos; Földesy, Péter; Zarándy, Ákos

    2015-06-01

    We propose a scalable, low-noise imager architecture for terahertz recordings that helps to build large-scale integrated arrays from any field-effect transistor (FET)- or HEMT-based terahertz detector. It enhances the signal-to-noise ratio (SNR) by inherently enabling complex sampling schemes. The distinguishing feature of the architecture is the serially connected detectors with electronically controllable photoresponse. We show that this architecture facilitate room temperature imaging by decreasing the low-noise amplifier (LNA) noise to one-sixteenth of a non-serial sensor while also reducing the number of multiplexed signals in the same proportion. The serially coupled architecture can be combined with the existing read-out circuit organizations to create high-resolution, coarse-grain sensor arrays. Besides, it adds the capability to suppress overall noise with increasing array size. The theoretical considerations are proven on a 4 by 4 detector array manufactured on 180 nm feature sized standard CMOS technology. The detector array is integrated with a low-noise AC-coupled amplifier of 40 dB gain and has a resonant peak at 460 GHz with 200 kV/W overall sensitivity.

  12. Charge pump design in 130 nm SiGe BiCMOS technology for low-noise fractional-N PLLs

    NASA Astrophysics Data System (ADS)

    Kucharski, M.; Herzel, F.

    2015-11-01

    This paper presents a numerical comparison of charge pumps (CP) designed for a high linearity and a low noise to be used in a fractional-N phase-locked loop (PLL). We consider a PLL architecture, where two parallel CPs with DC offset are used. The CP for VCO fine tuning is biased at the output to keep the VCO gain constant. For this specific architecture, only one transistor per CP is relevant for phase detector linearity. This can be an nMOSFET, a pMOSFET or a SiGe HBT, depending on the design. The HBT-based CP shows the highest linearity, whereas all charge pumps show similar device noise. An internal supply regulator with low intrinsic device noise is included in the design optimization.

  13. High-gain cryogenic amplifier assembly employing a commercial CMOS operational amplifier.

    PubMed

    Proctor, J E; Smith, A W; Jung, T M; Woods, S I

    2015-07-01

    We have developed a cryogenic amplifier for the measurement of small current signals (10 fA-100 nA) from cryogenic optical detectors. Typically operated with gain near 10(7) V/A, the amplifier performs well from DC to greater than 30 kHz and exhibits noise level near the Johnson limit. Care has been taken in the design and materials to control heat flow and temperatures throughout the entire detector-amplifier assembly. A simple one-board version of the amplifier assembly dissipates 8 mW to our detector cryostat cold stage, and a two-board version can dissipate as little as 17 μW to the detector cold stage. With current noise baseline of about 10 fA/(Hz)(1/2), the cryogenic amplifier is generally useful for cooled infrared detectors, and using blocked impurity band detectors operated at 10 K, the amplifier enables noise power levels of 2.5 fW/(Hz)(1/2) for detection of optical wavelengths near 10 μm.

  14. An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors

    NASA Astrophysics Data System (ADS)

    Gao, Zhiqiang; Luan, Bo; Zhao, Jincai; Liu, Xiaowei

    2017-03-01

    In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz1/2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz1/2(@2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA.

  15. Continuous-Time ΣΔ ADC with Implicit Variable Gain Amplifier for CMOS Image Sensor

    PubMed Central

    Bermak, Amine; Abbes, Amira; Amor Benammar, Mohieddine

    2014-01-01

    This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency. PMID:24772012

  16. Continuous-time ΣΔ ADC with implicit variable gain amplifier for CMOS image sensor.

    PubMed

    Tang, Fang; Bermak, Amine; Abbes, Amira; Benammar, Mohieddine Amor

    2014-01-01

    This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency.

  17. Low-noise cryogenic transmission line

    NASA Technical Reports Server (NTRS)

    Norris, D.

    1987-01-01

    New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.

  18. A low-power CMOS operational amplifier IC for a heterogeneous paper-based potentiostat

    NASA Astrophysics Data System (ADS)

    Bezuidenhout, P.; Land, K.; Joubert, T.-H.

    2016-02-01

    Electrochemical biosensing is used to detect specific analytes in fluids, such as bacterial and chemical contaminants. A common implementation of an electrochemical readout is a potentiostat, which usually includes potentiometric, amperometric, and impedimetric detection. Recently several researchers have developed small, low-cost, single-chip silicon-based potentiostats. With the advances in heterogeneous integration technology, low-power potentiostats can be implemented on paper and similar low cost substrates. This paper deals with the design of a low-power paper-based amperometric front-end for a low-cost and rapid detection environment. In amperometric detection a voltage signal is provided to a sensor system, while a small current value generated by an electrochemical redox reaction in the system is measured. In order to measure low current values, the noise of the circuit must be minimized, which is accomplished with a pre-amplification front-end stage, typically designed around an operational amplifier core. An appropriate circuit design for a low-power and low-cost amperometric front-end is identified, taking the heterogeneous integration of various components into account. The operational amplifier core is on a bare custom CMOS chip, which will be integrated onto the paper substrate alongside commercial off-the-shelf electronic components. A general-purpose low-power two-stage CMOS amplifier circuit is designed and simulated for the ams 350 nm 5 V process. After the layout design and verification, the IC was submitted for a multi-project wafer manufacturing run. The simulated results are a bandwidth of 2.4 MHz, a common-mode rejection ratio of 70.04 dB, and power dissipation of 0.154 mW, which are comparable with the analytical values.

  19. Transmission of wireless neural signals through a 0.18 µm CMOS low-power amplifier.

    PubMed

    Gazziro, M; Braga, C F R; Moreira, D A; Carvalho, A C P L F; Rodrigues, J F; Navarro, J S; Ardila, J C M; Mioni, D P; Pessatti, M; Fabbro, P; Freewin, C; Saddow, S E

    2015-01-01

    In the field of Brain Machine Interfaces (BMI) researchers still are not able to produce clinically viable solutions that meet the requirements of long-term operation without the use of wires or batteries. Another problem is neural compatibility with the electrode probes. One of the possible ways of approaching these problems is the use of semiconductor biocompatible materials (silicon carbide) combined with an integrated circuit designed to operate with low power consumption. This paper describes a low-power neural signal amplifier chip, named Cortex, fabricated using 0.18 μm CMOS process technology with all electronics integrated in an area of 0.40 mm(2). The chip has 4 channels, total power consumption of only 144 μW, and is impedance matched to silicon carbide biocompatible electrodes.

  20. A High Performance CMOS Current Mirror Circuit with Neuron MOSFETs and a Transimpedance Amplifier

    NASA Astrophysics Data System (ADS)

    Shimizu, Akio; Ishikawa, Yohei; Fukai, Sumio; Aikawa, Masayoshi

    In this paper, we propose a high accuracy current mirror circuit suitable for a low-voltage operation. The proposed circuit has a novel negative feedback that is composed of neuron MOSFETs and a transimpedance amplifier. As a result, the proposed circuit achieves a high accuracy current mirror circuit. At the same time, the proposed circuit monitors an error current by a low voltage because the negative feedback operates in a current-mode. The performance of the proposed circuit is evaluated using HSPICE simulation with On-Semiconductor 1.48μm CMOS device parameters. Simulation results show that the output resistance of the proposed circuit is 5.79[GΩ] and minimum operating range is 0.3[V].

  1. A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer

    NASA Astrophysics Data System (ADS)

    Sitnikov, A.; Kalabukhova, E.; Oliynyk, V.; Kolisnichenko, M.

    2017-05-01

    We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.

  2. A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer.

    PubMed

    Sitnikov, A; Kalabukhova, E; Oliynyk, V; Kolisnichenko, M

    2017-05-01

    We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.

  3. Advanced design and characterization methodologies for memory-aware CMOS power-amplifier implementation

    NASA Astrophysics Data System (ADS)

    Schleyer, Martin; Maurath, Dominic; Klar, Heinrich; Gerfers, Friedel

    2017-09-01

    This paper reports on an effective root-cause analysis method of memory effects in power amplifiers, as well as introduces compensation techniques on a circuit design level. Despite conventional memory-effect approaches, the discussed method uses a two-tone scan over a wide operation and modulation range. This enables an in-depth study of physical causes and helps to implement compensation techniques at design stage. On the one hand, this circuit investigation is optimized using an automated SystemC model parametrized with real device and measurement values. Hence, computation time is widely reduced which shortens design cycles. On the other hand, the implementation of the derived circuit compensation means will reduce the complexity of digital pre-distortion due to a reduced memory-effect induced AM/AM and AM/PM hysteresis. The approach is demonstrated on a 65 nm CMOS power amplifier with an OIP1 of 27 dBm and a PAE of over 30 % using WCDMA and LTE signals. In fact, mismatch could be reduced by more than 8 %.

  4. A low-power CMOS trans-impedance amplifier for FM/cw ladar imaging system

    NASA Astrophysics Data System (ADS)

    Hu, Kai; Zhao, Yi-qiang; Sheng, Yun; Zhao, Hong-liang; Yu, Hai-xia

    2013-09-01

    A scannerless ladar imaging system based on a unique frequency modulation/continuous wave (FM/cw) technique is able to entirely capture the target environment, using a focal plane array to construct a 3D picture of the target. This paper presents a low power trans-impedance amplifier (TIA) designed and implemented by 0.18 μm CMOS technology, which is used in the FM/cw imaging ladar with a 64×64 metal-semiconductor-metal(MSM) self-mixing detector array. The input stage of the operational amplifier (op amp) in TIA is realized with folded cascade structure to achieve large open loop gain and low offset. The simulation and test results of TIA with MSM detectors indicate that the single-end trans-impedance gain is beyond 100 kΩ, and the -3 dB bandwidth of Op Amp is beyond 60 MHz. The input common mode voltage ranges from 0.2 V to 1.5 V, and the power dissipation is reduced to 1.8 mW with a supply voltage of 3.3 V. The performance test results show that the TIA is a candidate for preamplifier of the read-out integrated circuit (ROIC) in the FM/cw scannerless ladar imaging system.

  5. Self-amplified CMOS image sensor using a current-mode readout circuit

    NASA Astrophysics Data System (ADS)

    Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

    2014-05-01

    The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

  6. A 180-Vpp Integrated Linear Amplifier for Ultrasonic Imaging Applications in a High-Voltage CMOS SOI Technology.

    PubMed

    Sun, Kexu; Gao, Zheng; Gui, Ping; Wang, Rui; Oguzman, Ismail; Xu, Xiaochen; Vasanth, Karthik; Zhou, Qifa; Shung, K Kirk

    2015-02-01

    This brief presents a monolithically integrated fully differential linear HV amplifier as the driver of an ultrasonic transducer. The linear amplifier is capable of transmitting HV arbitrary signals with a very low harmonic distortion, which is suitable for tissue harmonic imaging and other ultrasonic modes for enhanced imaging quality. The amplifier is designed and implemented using the 0.7-μm CMOS silicon-on-insulator process with 120-V devices. The amplifier, when driving a load of 300 pF in parallel with 100 Ω, is capable of transmitting a sine-wave signal with a frequency of up to 4.4 MHz, a maximum signal swing of 180 Vpp, and a second-order harmonic distortion (HD2) of -56 dBc but only dissipating an average power of 62 mW with a 0.1% duty cycle.

  7. A 180-Vpp Integrated Linear Amplifier for Ultrasonic Imaging Applications in a High-Voltage CMOS SOI Technology

    PubMed Central

    Sun, Kexu; Gao, Zheng; Gui, Ping; Wang, Rui; Oguzman, Ismail; Xu, Xiaochen; Vasanth, Karthik; Zhou, Qifa; Shung, K. Kirk

    2015-01-01

    This brief presents a monolithically integrated fully differential linear HV amplifier as the driver of an ultrasonic transducer. The linear amplifier is capable of transmitting HV arbitrary signals with a very low harmonic distortion, which is suitable for tissue harmonic imaging and other ultrasonic modes for enhanced imaging quality. The amplifier is designed and implemented using the 0.7-μm CMOS silicon-on-insulator process with 120-V devices. The amplifier, when driving a load of 300 pF in parallel with 100 Ω, is capable of transmitting a sine-wave signal with a frequency of up to 4.4 MHz, a maximum signal swing of 180 Vpp, and a second-order harmonic distortion (HD2) of −56 dBc but only dissipating an average power of 62 mW with a 0.1% duty cycle. PMID:25914609

  8. Digital Switching CMOS Power Amplifier for Multiband and Multimode Handset Applications

    NASA Astrophysics Data System (ADS)

    Nakatani, Toshifumi

    This thesis is directed towards the development of a digitally-assisted radio frequency power amplifier (RF PA) which is one of the potential solutions to realize a multiband and multimode transmitter with high efficiency for handset applications. To improve efficiency and linearity in multiple conditions, PA circuits and digital signal processing (DSP) algorithms are co-designed. In the dissertation, a proposed architecture employs a current-mode class-D (CMCD) configuration for high efficiency, and a polar modulation scheme driven by digital inputs. Detail design, fabrication and experimental results are given for circuit implementation and DSP of this architecture. First, a multiband watt-class complementary metal-oxide-semiconductor (CMOS) PA is demonstrated using 0.15 um CMOS integrated circuits (ICs), off-chip inductor and balun. To obtain high breakdown voltage, stacked field effect transistors (FETs) are used. The CMCD PA is tuned by band-switching capacitors, operating in the 0.7-1.8 GHz frequency band. The overall efficiencies of 27.1 / 25.6 % are achieved at 30.2 / 28.9 dBm CW output powers and 0.85 / 1.75 GHz carrier frequencies, respectively. Next, to achieve wide output power dynamic range, an architecture consisting of small segmented unti-cells is introduced into the PA, where multiple three-state unit-cells are used and the state of each unit-cell is controlled to provide a specific output power. The overall dynamic ranges are expanded to approximately 90 dB and 85 dB at and 0.85 / 1.75 GHz, respectively. The dissertation then presents digital modulation algorithms. The digital compensation techniques are developed to maintain linearity of an envelope modulator of the polar transmitter. A new digital pulse width modulation algorithm is also shown to partially suppress spurious signals associated with the digital input envelope signal. When wideband code-division multiple access (WCDMA) modulation is implemented, spur suppression of 9-10 dB is

  9. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

    DTIC Science & Technology

    2014-01-01

    discovering techniques to build wide temperature range electronics for millimeter wave imaging applications. Realization of this plan has resulted in a...State Circuits. 41.12 (December 2006): 2992-2997. 8. De Vida , G., and G. Iannaccone. “An Ultra-Low Power, Temperature Compensated Voltage

  10. Ultra-low-noise microwave amplifiers

    NASA Technical Reports Server (NTRS)

    Clauss, R. C.; Trowbridge, D.

    1980-01-01

    The highlights of 20 years of maser use and development are presented. Masers discussed include cavity, traveling wave, K band, and S band. Noise temperatures measured since 1960 are summarized. Use of masers in the Deep Space Network is presented. Costs associated with the construction of masers systems are given.

  11. EHF low-noise FET receiver

    NASA Technical Reports Server (NTRS)

    Schellenberg, J. M.; Watkins, E. T.

    1983-01-01

    Extremely high frequency (EHF) receivers for military and NASA programs must be small, lightweight, and highly reliable. In connection with recent advances in the development of mm-wave FET devices and circuits, a basis has been obtained for the eventual replacement of diode mixer front-ends by FET preamplifiers in receivers up to 94 GHz. By placing a low noise amplifier in front of the mixer it is possible to achieve a lower system noise figure than that found in conventional mm-wave receivers. A broader bandwidth can also be provided. Attention is given to the receiver configuration, a low noise FET amplifier, an image rejection filter, a dual-gate FET mixer, a FET local oscillator, and a FET receiver.

  12. A New Common-Mode Stabilization Method for a CMOS Cascode Class-E Power Amplifier with Driver Stage

    NASA Astrophysics Data System (ADS)

    Li, Zhisheng; Bauwelinck, Johan; Torfs, Guy; Yin, Xin; Vandewege, Jan

    This paper presents a new common-mode stabilization method for a CMOS differential cascode Class-E power amplifier with LC-tank based driver stage. The stabilization method is based on the identification of the poles and zeros of the closed-loop transfer function at a critical node. By adding a series resistor at the common-gate node of the cascode transistor, the right-half-plane poles are moved to the left half plane, improving the common-mode stability. The simulation results show that the new method is an effective way to stabilize the PA.

  13. Area-Efficient 60 GHz +18.9 dBm Power Amplifier with On-Chip Four-Way Parallel Power Combiner in 65-nm CMOS

    NASA Astrophysics Data System (ADS)

    Farahabadi, Payam Masoumi; Basaligheh, Ali; Saffari, Parvaneh; Moez, Kambiz

    2017-02-01

    This paper presents a compact 60-GHz power amplifier utilizing a four-way on-chip parallel power combiner and splitter. The proposed topology provides the capability of combining the output power of four individual power amplifier cores in a compact die area. Each power amplifier core consists of a three-stage common-source amplifier with transformer-coupled impedance matching networks. Fabricated in 65-nm CMOS process, the measured gain of the 0.19-mm2 power amplifier at 60 GHz is 18.8 and 15 dB utilizing 1.4 and 1.0 V supply. Three-decibel band width of 4 GHz and P1dB of 16.9 dBm is measured while consuming 424 mW from a 1.4-V supply. A maximum saturated output power of 18.3 dBm is measured with the 15.9% peak power added efficiency at 60 GHz. The measured insertion loss is 1.9 dB at 60 GHz. The proposed power amplifier achieves the highest power density (power/area) compared to the reported 60-GHz CMOS power amplifiers in 65 nm or older CMOS technologies.

  14. Area-Efficient 60 GHz +18.9 dBm Power Amplifier with On-Chip Four-Way Parallel Power Combiner in 65-nm CMOS

    NASA Astrophysics Data System (ADS)

    Farahabadi, Payam Masoumi; Basaligheh, Ali; Saffari, Parvaneh; Moez, Kambiz

    2017-06-01

    This paper presents a compact 60-GHz power amplifier utilizing a four-way on-chip parallel power combiner and splitter. The proposed topology provides the capability of combining the output power of four individual power amplifier cores in a compact die area. Each power amplifier core consists of a three-stage common-source amplifier with transformer-coupled impedance matching networks. Fabricated in 65-nm CMOS process, the measured gain of the 0.19-mm2 power amplifier at 60 GHz is 18.8 and 15 dB utilizing 1.4 and 1.0 V supply. Three-decibel band width of 4 GHz and P1dB of 16.9 dBm is measured while consuming 424 mW from a 1.4-V supply. A maximum saturated output power of 18.3 dBm is measured with the 15.9% peak power added efficiency at 60 GHz. The measured insertion loss is 1.9 dB at 60 GHz. The proposed power amplifier achieves the highest power density (power/area) compared to the reported 60-GHz CMOS power amplifiers in 65 nm or older CMOS technologies.

  15. High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.

    PubMed

    Pan, Huapu; Assefa, Solomon; Green, William M J; Kuchta, Daniel M; Schow, Clint L; Rylyakov, Alexander V; Lee, Benjamin G; Baks, Christian W; Shank, Steven M; Vlasov, Yurii A

    2012-07-30

    The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.

  16. Concentric Parallel Combining Balun for Millimeter-Wave Power Amplifier in Low-Power CMOS with High-Power Density

    NASA Astrophysics Data System (ADS)

    Han, Jiang-An; Kong, Zhi-Hui; Ma, Kaixue; Yeo, Kiat Seng; Lim, Wei Meng

    2016-11-01

    This paper presents a novel balun for a millimeter-wave power amplifier (PA) design to achieve high-power density in a 65-nm low-power (LP) CMOS process. By using a concentric winding technique, the proposed parallel combining balun with compact size accomplishes power combining and unbalance-balance conversion concurrently. For calculating its power combination efficiency in the condition of various amplitude and phase wave components, a method basing on S-parameters is derived. Based on the proposed parallel combining balun, a fabricated 60-GHz industrial, scientific, and medical (ISM) band PA with single-ended I/O achieves an 18.9-dB gain and an 8.8-dBm output power at 1-dB compression and 14.3-dBm saturated output power ( P sat) at 62 GHz. This PA occupying only a 0.10-mm2 core area has demonstrated a high-power density of 269.15 mW/mm2 in 65 nm LP CMOS.

  17. Studies of the LBL CMOS integrated amplifier/discriminator for randomly timed inputs from fixed target experiments

    SciTech Connect

    Russ, J.S.; Yarema, R.J.; Zimmerman, T.

    1988-12-01

    A group at Lawrence Berkeley Laboratory has reported an elegant CMOS VLSI circuit for amplifying, discriminating, and encoding the signals from highly-segmented charge output devices, e.g., silicon strip detectors or pad readout structures in gaseous detectors. The design exploits switched capacitor circuits and the well-known time structure of data acquisition in colliding beam accelerators to cancel leakage effects and switching noise. For random inputs, these methods are not directly applicable. However, the high speed of the reset switches makes possible a mode of operation for fixed target experiments that uses fast resets to erase unwanted data from random triggers. Data acquisition in this mode has been performed. Details of operation and measurements of noise and rate capability will be presented. 8 refs., 6 figs.

  18. A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier

    PubMed Central

    Lioe, De Xing; Mars, Kamel; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru

    2016-01-01

    A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is very small and needs to be extracted from an extremely large offset due to a probing laser signal. In order to suppress the offset components while amplifying high-frequency modulated small SRS signal components, the lock-in pixel uses a high-speed LEFM for demodulating the SRS signal, resistor-capacitor low-pass filter (RC-LPF) and switched-capacitor (SC) integrator with a fully CMOS differential amplifier. AC (modulated) components remained in the RC-LPF outputs are eliminated by the phase-adjusted sampling with the SC integrator and the demodulated DC (unmodulated) components due to the SRS signal are integrated over many samples in the SC integrator. In order to suppress further the residual offset and the low frequency noise (1/f noise) components, a double modulation technique is introduced in the SRS signal measurements, where the phase of high-frequency modulated laser beam before irradiation of a specimen is modulated at an intermediate frequency and the demodulation is done at the lock-in pixel output. A prototype chip for characterizing the SRS lock-in pixel is implemented and a successful operation is demonstrated. The reduction effects of residual offset and 1/f noise components are confirmed by the measurements. A ratio of the detected small SRS to offset a signal of less than 10−5 is experimentally demonstrated, and the SRS spectrum of a Benzonitrile sample is successfully observed. PMID:27089339

  19. A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier.

    PubMed

    Lioe, De Xing; Mars, Kamel; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru

    2016-04-13

    A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is very small and needs to be extracted from an extremely large offset due to a probing laser signal. In order to suppress the offset components while amplifying high-frequency modulated small SRS signal components, the lock-in pixel uses a high-speed LEFM for demodulating the SRS signal, resistor-capacitor low-pass filter (RC-LPF) and switched-capacitor (SC) integrator with a fully CMOS differential amplifier. AC (modulated) components remained in the RC-LPF outputs are eliminated by the phase-adjusted sampling with the SC integrator and the demodulated DC (unmodulated) components due to the SRS signal are integrated over many samples in the SC integrator. In order to suppress further the residual offset and the low frequency noise (1/f noise) components, a double modulation technique is introduced in the SRS signal measurements, where the phase of high-frequency modulated laser beam before irradiation of a specimen is modulated at an intermediate frequency and the demodulation is done at the lock-in pixel output. A prototype chip for characterizing the SRS lock-in pixel is implemented and a successful operation is demonstrated. The reduction effects of residual offset and 1/f noise components are confirmed by the measurements. A ratio of the detected small SRS to offset a signal of less than 10(-)⁵ is experimentally demonstrated, and the SRS spectrum of a Benzonitrile sample is successfully observed.

  20. Digital standard cells and operational amplifiers for operation up to 250 degrees C using low-cost CMOS technology

    NASA Astrophysics Data System (ADS)

    Stemmer, Jens; Ackermann, Joerg; Uffmann, Dirk; Aderhold, Jochen

    1996-09-01

    There is an increasing demand from automotive, aircraft and space industry for reliable high temperature resistant electronics. Circuits with reliable functionality up to temperatures of 250 degree(s)C would be sufficient for most of these applications. Digital standard cells and operational amplifiers are the basic building blocks of these circuits. Commercially available digital standard cell libraries and operational amplifiers are normally specified for operation up to a maximum temperature of 125 degree(s)C. Hence, the purpose of this work was the design and characterization of digital standard cells and operational amplifiers for operation up to 250 degree(s)C using a low-cost 1.0 micrometers epi-CMOS process. Several design measures were applied to the cells in order to further improve latch-up resistivity and to limit leakage currents, respectively. The transfer curves of all digital cells for all input signal combinations have been recorded in the temperature range from 30 to 250 degree(s)C. Significant results are very low temperature shifts of the noise margins and of the switching point, respectively. Furthermore, the low (0 V) and high (5 V) levels are reached exactly over the entire temperature range. Outstanding characteristics of the operational amplifier comprise low open-loop gain temperature drift as well as low offset and offset temperature drift, respectively. The open-loop gain was greater than 83 dB at room temperature with a drift of less than 0.02 dB/ degree(s)C. The offset voltage amounted to -1 mV at room temperature and 1 mV at 250 degree(s)C, respectively. The long-term behavior of these cells is currently under investigation.

  1. A novel noise optimization technique for inductively degenerated CMOS LNA

    NASA Astrophysics Data System (ADS)

    Zhiqing, Geng; Haiyong, Wang; Nanjian, Wu

    2009-10-01

    This paper proposes a novel noise optimization technique. The technique gives analytical formulae for the noise performance of inductively degenerated CMOS low noise amplifier (LNA) circuits with an ideal gate inductor for a fixed bias voltage and nonideal gate inductor for a fixed power dissipation, respectively, by mathematical analysis and reasonable approximation methods. LNA circuits with required noise figure can be designed effectively and rapidly just by using hand calculations of the proposed formulae. We design a 1.8 GHz LNA in a TSMC 0.25 μm CMOS process. The measured results show a noise figure of 1.6 dB with a forward gain of 14.4 dB at a power consumption of 5 mW, demonstrating that the designed LNA circuits can achieve low noise figure levels at low power dissipation.

  2. Optimization of the Close-to-Carrier Phase Noise in a CMOS-MEMS Oscillator Using a Phase Tunable Sustaining-Amplifier.

    PubMed

    Sobreviela, Guillermo; Riverola, Martin; Torres, Francesc; Uranga, Arantxa; Barniol, Nuria

    2017-05-01

    In this paper, the phase noise of a 24-MHz complimentary metal-oxide-semiconductor microelectromechanical systems (CMOS-MEMS) oscillator with zero-level vacuum package is studied. We characterize and analyze the nonlinear regime of each one of the modules that compose the oscillator (CMOS sustaining-amplifier and MEMS resonator). As we show, the presented resonator exhibits a high nonlinear behavior. Such a fact is exploited as a mechanism to stabilize the oscillation amplitude, allowing us to maintain the sustaining-amplifier working in the linear regime. Consequently, the nonlinear resonator becomes the main close-to-carrier phase noise source. The sustaining amplifier, which functions as a phase shifter, was developed such that MEMS operation point optimization could be achieved without an increase in circuitry modules. Therefore, the system saves on area and power, and is able to improve the phase noise 26 dBc/Hz (at 1-kHz carrier frequency offset).

  3. An inductorless CMOS programmable-gain amplifier with a > 3 GHz bandwidth for 60 GHz wireless transceivers

    NASA Astrophysics Data System (ADS)

    Wei, Zhu; Baoyong, Chi; Lixue, Kuang; Wen, Jia; Zhihua, Wang

    2014-10-01

    An inductorless wideband programmable-gain amplifier (PGA) for 60 GHz wireless transceivers is presented. To attain wideband characteristics, a modified Cherry—Hooper amplifier with a negative capacitive neutralization technique is employed as the gain cell while a novel circuit technique for gain adjustment is adopted; this technique can be universally applicable in wideband PGA design and greatly simplifying the design of wideband PGA. By cascading two gain cells and an output buffer stage, the PGA achieves the highest gain of 30 dB with the bandwidth much wider than 3 GHz. The PGA has been integrated into one whole 60 GHz wireless transceiver and implemented in the TSMC 65 nm CMOS process. The measurements on the receiver front-end show that the receiver front-end achieves an 18 dB variable gain range with a > 3 GHz bandwidth, which proves the proposed PGA achieves an 18 dB variable gain range with a bandwidth much wider than 3 GHz. The PGA consumes 10.7 mW of power from a 1.2-V supply voltage with a core area of only 0.025 mm2.

  4. Design, experimental verification, and analysis of a 1.8-V-input-range voltage-to-current converter using source degeneration for low-noise multimodal CMOS biosensor array

    NASA Astrophysics Data System (ADS)

    Niitsu, Kiichi; Ikeda, Kei; Muto, Keita; Nakazato, Kazuo

    2017-01-01

    A multimodal complementary metal-oxide semiconductor (CMOS) biosensor array manufactured using measurement methods such as potentiometry, amperometry, and impedimetry improves its cost competitiveness and measurement accuracy. In addition, it provides a wider range of application because it can obtain signals from multiple aspects. To develop high-signal-to-noise ratio (SNR) multimodal biosensor arrays, time-domain current integration was proposed in the literature and found to be effective. In addition to amperometry and impedimetry, it is possible to perform current integration using the potentiometry output by employing a voltage-to-current converter (VCC). However, a conventional VCC with a fixed transconductance mode does not provide a sufficient input range (<0.6 V) and its noise property has not been investigated. In this work, we investigate the design and noise property of a newly proposed VCC with source degeneration that enhances the input range. For evaluating the proposed method, a test chip was fabricated in a 0.6 µm CMOS. The measured results successfully demonstrate that the input range was enhanced from 0.6 to 1.8 V. Autonomous current limitation was also confirmed. The measured total input-referred noise was 0.445 mV (from 10 Hz to 10 kHz, assuming current integration at every 1 ms).

  5. Toward Fast, Low-noise, Low-power, Small Pixel Digital CCDs for X-ray Astronomy

    NASA Astrophysics Data System (ADS)

    Bautz, Mark W.; Burke, Barry; Cooper, Michael; Foster, Richard; Grant, Catherine E.; LaMarr, Beverly; Malonis, Andrew; Miller, Eric D.; Prigozhin, Gregory; Schuette, Daniel

    2017-08-01

    Future X-ray missions such as Lynx will require large-format imaging detectors with spectroscopic performance at least as good as the best current-generation devices but with much higher readout rates. We have been investigating a detector architecture under development at MIT Lincoln Laboratory, called the Digital CCD, for use in such missions. The Digital CCD is envisioned as a CMOS-compatible detector integrated with parallel CMOS signal processing chains. The combination of fast, low noise CCD amplifiers with highly parallel signal processing offers the high frame-rate required. The CMOS-compatibility of the CCD provides low-power charge transfer.Here we report on the X-ray spectral response of a CMOS-compatible test CCD read at 2.5 MHz (about 25 times faster than the CCDs operating on Chandra ACIS), using transfer clock levels of only +-1 V (power per unit area less than 25 times that of ACIS CCDs). The 8-micron pixels of this device are one third the size of those on Chandra ACIS. We compare charge splitting in this detector with that observed in larger-pixel detectors, and we briefly discuss the implications of the small-pixel, deep-depletion detector configurations required by Lynx.

  6. Low-noise nozzle valve

    NASA Astrophysics Data System (ADS)

    Gwin, Hal S.; Aaron, James

    1990-09-01

    A low noise, variable discharage area, valve is constructed having opposed recesses within which a pair of gates are slidably disposed. Each of the gates is provided with upstream edges having a radius thereon, the radius enabling smooth, accelerated, low noise flow therebetween. The gates are further provided with tracks along each side, which in turn slide along splines set in the side walls of the valve. A threaded rod which rotates in a threaded insert in a rear wall of each of the gates, serves to move the gates within their respective recesses.

  7. A low noise readout integrated circuit for Nb5N6 microbolometer array detector

    NASA Astrophysics Data System (ADS)

    Jiang, Zhou; Wan, Chao; Xiao, Peng; Jiang, Chengtao; Tu, Xuecou; Jia, Xiaoqing; Kang, Lin; Chen, Jian; Wu, Peiheng

    2017-02-01

    We present a readout circuit for 1 × 64 Nb5N6 microbolometer array detector. The intrinsic average responsivity of the detectors in the array is 650 V/W, and the corresponding noise equivalent power (NEP) is 17 pW/√Hz. Due to the low noise of the detector, we design a low noise readout circuit with 64 channels. The readout integrated circuit (ROIC) is fabricated under CMOS process with 0.18μm design rule, which has built-in bias and adjustable numerical-controlled output current. Differential structure is used for each pixel to boost capacity of resisting disturbance. A multiplexer and the second stage amplifier is followed after the ROIC. It is shown that the ROIC achieves an average gain of 47dB and a voltage noise spectral density of 9.34nV/√Hz at 10KHz. The performance of this readout circuit nearly fulfills the requirements for THz array detector. This readout circuit is fit for the detector, which indicates a good way to develop efficient and low-cost THz detector system.

  8. Bandwidth tunable amplifier for recording biopotential signals.

    PubMed

    Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

    2010-01-01

    This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

  9. Ultra low-noise charge coupled device

    NASA Technical Reports Server (NTRS)

    Janesick, James R. (Inventor)

    1993-01-01

    Special purpose CCD designed for ultra low-noise imaging and spectroscopy applications that require subelectron read noise floors, wherein a non-destructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are possible in this manner. In a preferred embodiment of the invention, a three-phase CCD horizontal register is used to bring a pixel charge packet to an input gate adjacent a floating gate amplifier. The charge is then repeatedly clocked back and forth between the input gate and the floating gate. Each time the charge is injected into the potential well of the floating gate, it is sensed non-destructively. The floating gate amplifier is provided with a reference voltage of a fixed value and a pre-charge gate for resetting the amplifier between charge samples to a constant gain. After the charge is repeatedly sampled a selected number of times, it is transferred by means of output gates, back into the horizontal register, where it is clocked in a conventional manner to a diffusion MOSFET amplifier. It can then be either sampled (destructively) one more time or otherwise discarded.

  10. Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

    NASA Astrophysics Data System (ADS)

    Giese, Malte; Vehring, Sönke; Böck, Georg; Jacob, Arne F.

    2017-08-01

    This paper presents requirements and front-end solutions for low-cost communication systems with data rates of 100 Gbit/s. Link budget analyses in different mass-market applications are conducted for that purpose. It proposes an implementation of the front-end as an active antenna array with support for beam steering and polarization multiplexing over the full W-band. The critical system components are investigated and presented. This applies to a transformer coupled power amplifier (PA) in 40 nm bulk CMOS. It shows saturated output power of more than 10 dBm and power-added-efficiency of more than 10 % over the full W-band. Furthermore, the performance of microstrip-to-waveguide transitions is shown exemplarily as an important part of the active antenna as it interfaces active circuitry and antenna in a polymer-and-metal process. The transition test design shows less than 0.9 dB insertion loss and more than 12 dB return loss for the differential transition over the full W-band.

  11. A high speed CMOS image sensor with a novel digital correlated double sampling and a differential difference amplifier.

    PubMed

    Kim, Daehyeok; Bae, Jaeyoung; Song, Minkyu

    2015-03-02

    In order to increase the operating speed of a CMOS image sensor (CIS), a new technique of digital correlated double sampling (CDS) is described. In general, the fixed pattern noise (FPN) of a CIS has been reduced with the subtraction algorithm between the reset signal and pixel signal. This is because a single-slope analog-to-digital converter (ADC) has been normally adopted in the conventional digital CDS with the reset ramp and signal ramp. Thus, the operating speed of a digital CDS is much slower than that of an analog CDS. In order to improve the operating speed, we propose a novel digital CDS based on a differential difference amplifier (DDA) that compares the reset signal and the pixel signal using only one ramp. The prototype CIS has been fabricated with 0.13 µm CIS technology and it has the VGA resolution of 640 × 480. The measured conversion time is 16 µs, and a high frame rate of 131 fps is achieved at the VGA resolution.

  12. An approximate HSPICE model for orbit low noise analog bipolar NPN transistors

    SciTech Connect

    Zimmerman, T.

    1991-07-01

    Vertical bipolar NPN transistors can be fabricated cheaply through MOSIS by using the Orbit 2 um Low Noise Analog CMOS process. The collector is formed from an N-well, the base from a p-base diffusion, and the emitter from an N-diffusion. However, since this is a CMOS process there is no buried layer in the collector. Therefore the collector resistance is quite large. Also, the minimum emitter size is 8 um {times} 8 um, which is substantially larger than many fast bipolar processes. For certain applications, though, such as common base or emitter follower amplifiers, the performance of this transistor may be quite acceptable. However, no AC SPICE model is published for this device. This paper describes a simple approximate measurement method that was used at Fermilab to formulate an HSPICE model for these transistor. This method requires only a fast pulse generator and a good digitizing oscilloscope with an active FET probe for the AC measurements. Model parameters for two transistors of different size are then given. 1 ref., 1 fig.

  13. High-gain, high-bandwidth, rail-to-rail, constant-gm CMOS operational amplifier

    NASA Astrophysics Data System (ADS)

    Huang, Hong-Yi; Wang, Bo-Ruei

    2013-01-01

    This study presents a high-gain, high-bandwidth, constant-gm , rail-to-rail operational amplifier (op-amp). The constant transconductance is improved with a source-to-bulk bias control of an input pair. A source degeneration scheme is also adapted to the output stage for receiving wide input range without degradation of the gain. Additionally, several compensation schemes are employed to enhance the stability. A test chip is fabricated in a 0.18 µm complementary metal-oxide semiconductor process. The active area of the op-amp is 181 × 173 µm2 and it consumes a power of 2.41 mW at a supply voltage of 1.8 V. The op-amp achieves a dc gain of 94.3 dB and a bandwidth of 45 MHz when the output capacitive load is connected to an effective load of 42.5 pF. A class-AB output stage combining a slew rate (SR) boost circuit provides a sinking current of 6 mA and an SR of 17 V/µs.

  14. A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier

    NASA Astrophysics Data System (ADS)

    Wu, L.; San Segundo Bello, D.; Coppejans, P.; Craninckx, J.; Wambacq, P.; Borremans, J.

    2017-02-01

    This paper presents a 20 Mfps 32 × 84 pixels CMOS burst-mode imager featuring high frame depth with a passive in-pixel amplifier. Compared to the CCD alternatives, CMOS burst-mode imagers are attractive for their low power consumption and integration of circuitry such as ADCs. Due to storage capacitor size and its noise limitations, CMOS burst-mode imagers usually suffer from a lower frame depth than CCD implementations. In order to capture fast transitions over a longer time span, an in-pixel CDS technique has been adopted to reduce the required memory cells for each frame by half. Moreover, integrated with in-pixel CDS, an in-pixel NMOS-only passive amplifier alleviates the kTC noise requirements of the memory bank allowing the usage of smaller capacitors. Specifically, a dense 108-cell MOS memory bank (10fF/cell) has been implemented inside a 30μm pitch pixel, with an area of 25 × 30μm2 occupied by the memory bank. There is an improvement of about 4x in terms of frame depth per pixel area by applying in-pixel CDS and amplification. With the amplifier's gain of 3.3, an FD input-referred RMS noise of 1mV is achieved at 20 Mfps operation. While the amplification is done without burning DC current, including the pixel source follower biasing, the full pixel consumes 10μA at 3.3V supply voltage at full speed. The chip has been fabricated in imec's 130nm CMOS CIS technology.

  15. Analog CMOS design for optical coherence tomography signal detection and processing.

    PubMed

    Xu, Wei; Mathine, David L; Barton, Jennifer K

    2008-02-01

    A CMOS circuit was designed and fabricated for optical coherence tomography (OCT) signal detection and processing. The circuit includes a photoreceiver, differential gain stage and lock-in amplifier based demodulator. The photoreceiver consists of a CMOS photodetector and low noise differential transimpedance amplifier which converts the optical interference signal into a voltage. The differential gain stage further amplifies the signal. The in-phase and quadrature channels of the lock-in amplifier each include an analog mixer and switched-capacitor low-pass filter with an external mixer reference signal. The interferogram envelope and phase can be extracted with this configuration, enabling Doppler OCT measurements. A sensitivity of -80 dB is achieved with faithful reproduction of the interferometric signal envelope. A sample image of finger tip is presented.

  16. Low noise lead screw positioner

    NASA Technical Reports Server (NTRS)

    Perkins, Gerald S. (Inventor)

    1986-01-01

    A very precise and low noise lead screw positioner, for positioning a retroreflector in an interferometer is described. A gas source supplies inert pressurized gas, that flows through narrow holes into the clearance space between a nut and the lead screw. The pressurized gas keeps the nut out of contact with the screw. The gas flows axially along the clearance space, into the environment. The small amount of inert gas flowing into the environment minimizes pollution. By allowing such flow into the environment, no seals are required between the end of the nut and the screw.

  17. Low-noise pulse conditioner

    DOEpatents

    Bird, David A.

    1983-01-01

    A low-noise pulse conditioner is provided for driving electronic digital processing circuitry directly from differentially induced input pulses. The circuit uses a unique differential-to-peak detector circuit to generate a dynamic reference signal proportional to the input peak voltage. The input pulses are compared with the reference signal in an input network which operates in full differential mode with only a passive input filter. This reduces the introduction of circuit-induced noise, or jitter, generated in ground referenced input elements normally used in pulse conditioning circuits, especially speed transducer processing circuits.

  18. The 30 GHz communications satellite low noise receiver

    NASA Technical Reports Server (NTRS)

    Steffek, L. J.; Smith, D. W.

    1983-01-01

    A Ka-band low noise front end in proof of concept (POC) model form for ultimate spaceborne communications receiver deployment was developed. The low noise receiver consists of a 27.5 to 30.0 GHz image enhanced mixer integrated with a 3.7 to 6.2 GHz FET low noise IF amplifier and driven by a self contained 23.8 GHz phase locked local oscillator source. The measured level of receiver performance over the 27.3 to 30.0 GHz RF/3.7 to 6.2 GHz IF band includes 5.5 to 6.5 dB (typ) SSB noise figure, 20.5 + or - 1.5 dB conversion gain and +23 dBm minimum third order two tone intermodulation output intercept point.

  19. The 30 GHz communications satellite low noise receiver

    NASA Astrophysics Data System (ADS)

    Steffek, L. J.; Smith, D. W.

    1983-10-01

    A Ka-band low noise front end in proof of concept (POC) model form for ultimate spaceborne communications receiver deployment was developed. The low noise receiver consists of a 27.5 to 30.0 GHz image enhanced mixer integrated with a 3.7 to 6.2 GHz FET low noise IF amplifier and driven by a self contained 23.8 GHz phase locked local oscillator source. The measured level of receiver performance over the 27.3 to 30.0 GHz RF/3.7 to 6.2 GHz IF band includes 5.5 to 6.5 dB (typ) SSB noise figure, 20.5 + or - 1.5 dB conversion gain and +23 dBm minimum third order two tone intermodulation output intercept point.

  20. Low noise charge ramp electrometer

    DOEpatents

    Morgan, John P.; Piper, Thomas C.

    1992-01-01

    An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit.

  1. Low noise charge ramp electrometer

    DOEpatents

    Morgan, J.P.; Piper, T.C.

    1992-10-06

    An electrometer capable of measuring small currents without the use of a feedback resistor which tends to contribute a large noise factor to the measured data. The electrometer eliminates the feedback resistor through the use of a feedback capacitor located across the electrometer amplifier. The signal from the electrometer amplifier is transferred to a electrometer buffer amplifier which serves to transfer the signal to several receptors. If the electrometer amplifier is approaching saturation, the buffer amplifier signals a reset discriminator which energizes a coil whose magnetic field closes a magnetic relay switch which in turn resets or zeros the feedback capacitor. In turn, a reset complete discriminator restarts the measurement process when the electrometer amplifier approaches its initial condition. The buffer amplifier also transmits the voltage signal from the electrometer amplifier to a voltage-to-frequency converter. The signals from the voltage-to-frequency converter are counted over a fixed period of time and the information is relayed to a data processor. The timing and sequencing of the small current measuring system is under the control of a sequence control logic unit. 2 figs.

  2. Low-noise pulse conditioner

    DOEpatents

    Bird, D.A.

    1981-06-16

    A low-noise pulse conditioner is provided for driving electronic digital processing circuitry directly from differentially induced input pulses. The circuit uses a unique differential-to-peak detector circuit to generate a dynamic reference signal proportional to the input peak voltage. The input pulses are compared with the reference signal in an input network which operates in full differential mode with only a passive input filter. This reduces the introduction of circuit-induced noise, or jitter, generated in ground referenced input elements normally used in pulse conditioning circuits, especially speed transducer processing circuits. This circuit may be used for conditioning the sensor signal from the Fidler coil in a gas centrifuge for separation of isotopic gaseous mixtures.

  3. A High-Efficiency CMOS Class-B Push-Pull Power Amplifier for Code-Division-Multiple-Access Cellular System

    NASA Astrophysics Data System (ADS)

    Yokoyama, Michio; Saito, Tetsuya; Tachibana, Ryoichi; Morimoto, Akihiro; Masu, Kazuya; Tsubouchi, Kazuo

    2000-04-01

    A silicon Class-B complementary push-pull power amplifier for a code-division-multiple-access IS-95 cellular system has been proposed for the first time. 0.8-μm complementary metal-oxide-semiconductor (CMOS) devices are fabricated and evaluated using RF measurement and simulation. The RF-CMOS balanced design between n- and p-MOS devices has been investigated. From RF simulation, a power-added efficiency (PAE) of over 60% at an input power of 5 dBm and an adjacent-channel-power-ratio of {-}42 dBc are obtained. It is found that both high efficiency and high linearity are obtained using the RF-CMOS balanced design with optimized channel length and width. Furthermore, drain voltage control for IS-95 criteria has been proposed in addition to the balanced design. The overall PAE, which is defined as the PAE multiplied by the probability distribution function of the used power-level and integrated over the entire used power range, has been improved up to 49%.

  4. Analysis and Design of a Linear Digital Programmable Gain Amplifier in a 0.13 µm SiGe BiCMOS technology

    NASA Astrophysics Data System (ADS)

    Du, Xuan-Quang; Knobloch, Anselm; Grözing, Markus; Buck, Matthias; Berroth, Manfred

    2017-03-01

    This paper presents the analysis and the design of a fully-differential digital programmable gain amplifier (PGA) in a 0.13 µm BiCMOS technology. The PGA has a gain control range of 31 dB with 1 dB gain step size and consumes 284 mW from a 3.6 V power supply. At a maximum gain of 25 dB, the PGA exhibits a 3-dB bandwidth of 10.1 GHz. The measured gain error for all 32 possible gain settings is between -0.19/+0.46 dB at 1 GHz. Up to 13 GHz the third harmonic distortion H{D3} stays below -34 dB for all 32 gain settings at a differential output peak-to-peak voltage of 1 V after the last amplifier stage.

  5. Novel active signal compression in low-noise analog readout at future X-ray FEL facilities

    NASA Astrophysics Data System (ADS)

    Manghisoni, M.; Comotti, D.; Gaioni, L.; Lodola, L.; Ratti, L.; Re, V.; Traversi, G.; Vacchi, C.

    2015-04-01

    This work presents the design of a low-noise front-end implementing a novel active signal compression technique. This feature can be exploited in the design of analog readout channels for application to the next generation free electron laser (FEL) experiments. The readout architecture includes the low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time variant shaper used to process the signal at the preamplifier output and a 10-bit successive approximation register (SAR) analog-to-digital converter (ADC). The channel will be operated in such a way to cope with the high frame rate (exceeding 1 MHz) foreseen for future XFEL machines. The choice of a 65 nm CMOS technology has been made in order to include all the building blocks in the target pixel pitch of 100 μm. This work has been carried out in the frame of the PixFEL Project funded by the Istituto Nazionale di Fisica Nucleare (INFN), Italy.

  6. Low-Power SOI CMOS Transceiver

    NASA Technical Reports Server (NTRS)

    Fujikawa, Gene (Technical Monitor); Cheruiyot, K.; Cothern, J.; Huang, D.; Singh, S.; Zencir, E.; Dogan, N.

    2003-01-01

    The work aims at developing a low-power Silicon on Insulator Complementary Metal Oxide Semiconductor (SOI CMOS) Transceiver for deep-space communications. RF Receiver must accomplish the following tasks: (a) Select the desired radio channel and reject other radio signals, (b) Amplify the desired radio signal and translate them back to baseband, and (c) Detect and decode the information with Low BER. In order to minimize cost and achieve high level of integration, receiver architecture should use least number of external filters and passive components. It should also consume least amount of power to minimize battery cost, size, and weight. One of the most stringent requirements for deep-space communication is the low-power operation. Our study identified that two candidate architectures listed in the following meet these requirements: (1) Low-IF receiver, (2) Sub-sampling receiver. The low-IF receiver uses minimum number of external components. Compared to Zero-IF (Direct conversion) architecture, it has less severe offset and flicker noise problems. The Sub-sampling receiver amplifies the RF signal and samples it using track-and-hold Subsampling mixer. These architectures provide low-power solution for the short- range communications missions on Mars. Accomplishments to date include: (1) System-level design and simulation of a Double-Differential PSK receiver, (2) Implementation of Honeywell SOI CMOS process design kit (PDK) in Cadence design tools, (3) Design of test circuits to investigate relationships between layout techniques, geometry, and low-frequency noise in SOI CMOS, (4) Model development and verification of on-chip spiral inductors in SOI CMOS process, (5) Design/implementation of low-power low-noise amplifier (LNA) and mixer for low-IF receiver, and (6) Design/implementation of high-gain LNA for sub-sampling receiver. Our initial results show that substantial improvement in power consumption is achieved using SOI CMOS as compared to standard CMOS

  7. A design on low noise imaging circuit for SWIR sensor

    NASA Astrophysics Data System (ADS)

    Fan, Ben; Han, Zhixue; Ma, Fei; Dong, Shuli

    2016-11-01

    SWIR (Short Wave Infrared) imaging is an important imaging technology in space remote sensing. According to the characteristics of SWIR detector, the whole scheme of low noise imaging circuit is presented in this paper. For certain key circuit which noise is sensitive in the design, such as bias generation circuit, analysis of noise sources and calculation of theoretical noise value of actual circuit which is usually ignored in previous researches are proposed in order to estimate the level of circuit noise and optimize the circuit to reduce noise. The structure of analog filter amplifier circuit is also analyzed by introducing noise-factor analytic approach, based on the analysis result some design principles of the circuit are proposed. The noise suppression methods in the design are separately analyzed in both time suppression and space suppression; some specific methods for these two kinds of measures are listed in this paper. The final experiment results indicate that the low noise imaging circuit design based on above methods is reasonable and effective, the circuit has a higher SNR and can work normally at room temperature, and the whole design meets the original requirement of low noise. This low noise circuit for SWIR detector and its methods to analyze and calculate noise value are valuable examples for future similar designs.

  8. Column-Parallel Correlated Multiple Sampling Circuits for CMOS Image Sensors and Their Noise Reduction Effects

    PubMed Central

    Suh, Sungho; Itoh, Shinya; Aoyama, Satoshi; Kawahito, Shoji

    2010-01-01

    For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e− for the simple integration CMS and 75 dB and 2.2 e− for the folding integration CMS, respectively, are obtained. PMID:22163400

  9. Column-parallel correlated multiple sampling circuits for CMOS image sensors and their noise reduction effects.

    PubMed

    Suh, Sungho; Itoh, Shinya; Aoyama, Satoshi; Kawahito, Shoji

    2010-01-01

    For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e(-) for the simple integration CMS and 75 dB and 2.2 e(-) for the folding integration CMS, respectively, are obtained.

  10. A Glucose Biosensor Using CMOS Potentiostat and Vertically Aligned Carbon Nanofibers.

    PubMed

    Al Mamun, Khandaker A; Islam, Syed K; Hensley, Dale K; McFarlane, Nicole

    2016-08-01

    This paper reports a linear, low power, and compact CMOS based potentiostat for vertically aligned carbon nanofibers (VACNF) based amperometric glucose sensors. The CMOS based potentiostat consists of a single-ended potential control unit, a low noise common gate difference-differential pair transimpedance amplifier and a low power VCO. The potentiostat current measuring unit can detect electrochemical current ranging from 500 nA to 7 [Formula: see text] from the VACNF working electrodes with high degree of linearity. This current corresponds to a range of glucose, which depends on the fiber forest density. The potentiostat consumes 71.7 [Formula: see text] of power from a 1.8 V supply and occupies 0.017 [Formula: see text] of chip area realized in a 0.18 [Formula: see text] standard CMOS process.

  11. On-Chip Integrated Distributed Amplifier and Antenna Systems in SiGe BiCMOS for Transceivers with Ultra-Large Bandwidth

    NASA Astrophysics Data System (ADS)

    Valerio Testa, Paolo; Klein, Bernhard; Hahnel, Ronny; Plettemeier, Dirk; Carta, Corrado; Ellinger, Frank

    2017-08-01

    This paper presents an overview of the research work currently being performed within the frame of project DAAB and its successor DAAB-TX towards the integration of ultra-wideband transceivers operating at mm-wave frequencies and capable of data rates up to 100 Gbits ^{-1}. Two basic system architectures are being considered: integrating a broadband antenna with a distributed amplifier and integrate antennas centered at adjacent frequencies with broadband active combiners or dividers. The paper discusses in detail the design of such systems and their components, from the distributed amplifiers and combiners, to the broadband silicon antennas and their single-chip integration. All components are designed for fabrication in a commercially available SiGe:C BiCMOS technology. The presented results represent the state of the art in their respective areas: 170 GHz is the highest reported bandwidth for distributed amplifiers integrated in Silicon; 89 GHz is the widest reported bandwidth for integrated-system antennas; the simulated performance of the two antenna integrated receiver spans 105 GHz centered at 148GHz, which would improve the state of the art by a factor in excess of 4 even against III-V implementations, if confirmed by measurements.

  12. A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35 μm CMOS

    NASA Astrophysics Data System (ADS)

    Hui, Xu; Jun, Feng; Quan, Liu; Wei, Li

    2011-10-01

    A 3.125-Gb/s transimpedance amplifier (TIA) for an optical communication system is realized in 0.35 μm CMOS technology. The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-cancellation techniques to stabilize the DC operating point. In addition, noise optimization is processed. The on-wafer measurement results show the transimpedance gain of 54.2 dBΩ and -3 dB bandwidth of 2.31 GHz. The measured average input referred noise current spectral density is about . The measured eye diagram is clear and symmetrical for 2.5-Gb/s and 3.125-Gb/s PRBS. Under a single 3.3-V supply voltage, the TIA consumes only 58.08 mW, including 20 mW from the output buffer. The whole die area is 465 × 435 μm2.

  13. A novel input-parasitic compensation technique for a nanopore-based CMOS DNA detection sensor

    NASA Astrophysics Data System (ADS)

    Kim, Jungsuk

    2016-12-01

    This paper presents a novel input-parasitic compensation (IPC) technique for a nanopore-based complementary metal-oxide-semiconductor (CMOS) DNA detection sensor. A resistive-feedback transimpedance amplifier is typically adopted as the headstage of a DNA detection sensor to amplify the minute ionic currents generated from a nanopore and convert them to a readable voltage range for digitization. But, parasitic capacitances arising from the headstage input and the nanopore often cause headstage saturation during nanopore sensing, thereby resulting in significant DNA data loss. To compensate for the unwanted saturation, in this work, we propose an area-efficient and automated IPC technique, customized for a low-noise DNA detection sensor, fabricated using a 0.35- μm CMOS process; we demonstrated this prototype in a benchtop test using an α-hemolysin ( α-HL) protein nanopore.

  14. Low-noise 6-8 GHz receiver

    NASA Astrophysics Data System (ADS)

    Pandian, J. D.; Baker, L.; Cortes, G.; Goldsmith, P. F.; Deshpande, A. A.; Ganesan, R.; Hagen, J.; Locke, L.; Wadefalk, N.; Weinreb, S.

    2006-12-01

    The combination of the traveling wave OMT device and the ultra-low-noise MMIC amplifiers has allowed us to develop a broadband 6-8 GHz receiver with a noise temperature of around 10 K. The combination of receiver noise and the additional noise contributions by the telescope optics gives an overall receiver temperature of around 28 K and 34 K in the two polarizations. The large collecting area of the telescope gives rise to a system equivalent flux density of around 4.5 Jy at 7 GHz.

  15. Cryogenically Cooled Field Effect Transistors for Low-Noise Systems

    NASA Technical Reports Server (NTRS)

    Wollack, Edward J.

    2002-01-01

    Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

  16. Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

    NASA Technical Reports Server (NTRS)

    Wollack, Edward J.; Rabin, Douglas M. (Technical Monitor)

    2002-01-01

    Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

  17. Low Noise Amplifiers Based on Lattice Engineered Substrates

    DTIC Science & Technology

    2007-11-02

    34 Improvement of the interface quality during thermal oxidation of -3.5 -3 -2.5 -2 -1.5 .1 -0.5 0 0.5 Al/sub 0.98/Ga/sub 0.02/As layers due to the...Partially oxidized pHEMTs showed improved power added efficiencies (PAEs) in comparison to fully oxidized or unoxidized devices and negligible charge...lattice- matched material system. The current aperture in the devices presented in this paper were produced by the partial oxidation of a high

  18. Superconducting Quantum Arrays for Wideband Antennas and Low Noise Amplifiers

    NASA Technical Reports Server (NTRS)

    Mukhanov, O.; Prokopemko, G.; Romanofsky, Robert R.

    2014-01-01

    Superconducting Quantum Iinetference Filters (SQIF) consist of a two-dimensional array of niobium Josephson Junctions formed into N loops of incommensurate area. This structure forms a magnetic field (B) to voltage transducer with an impulse like response at B0. In principle, the signal-to-noise ratio scales as the square root of N and the noise can be made arbitrarily small (i.e. The SQIF chips are expected to exhibit quantum limited noise performance). A gain of about 20 dB was recently demonstrated at 10 GHz.

  19. Miniaturized FDDA and CMOS Based Potentiostat for Bio-Applications

    PubMed Central

    Ghodsevali, Elnaz; Morneau-Gamache, Samuel; Mathault, Jessy; Landari, Hamza; Boisselier, Élodie; Boukadoum, Mounir; Gosselin, Benoit; Miled, Amine

    2017-01-01

    A novel fully differential difference CMOS potentiostat suitable for neurotransmitter sensing is presented. The described architecture relies on a fully differential difference amplifier (FDDA) circuit to detect a wide range of reduction-oxidation currents, while exhibiting low-power consumption and low-noise operation. This is made possible thanks to the fully differential feature of the FDDA, which allows to increase the source voltage swing without the need for additional dedicated circuitry. The FDDA also reduces the number of amplifiers and passive elements in the potentiostat design, which lowers the overall power consumption and noise. The proposed potentiostat was fabricated in 0.18 µm CMOS, with 1.8 V supply voltage. The device achieved 5 µA sensitivity and 0.99 linearity. The input-referred noise was 6.9 µVrms and the flicker noise was negligible. The total power consumption was under 55 µW. The complete system was assembled on a 20 mm × 20 mm platform that includes the potentiostat chip, the electrode terminals and an instrumentation amplifier for redox current buffering, once converted to a voltage by a series resistor. the chip dimensions were 1 mm × 0.5 mm and the other PCB components were off-chip resistors, capacitors and amplifiers for data acquisition. The system was successfully tested with ferricyanide, a stable electroactive compound, and validated with dopamine, a popular neurotransmitter. PMID:28394289

  20. Design of ultra-low power biopotential amplifiers for biosignal acquisition applications.

    PubMed

    Zhang, Fan; Holleman, Jeremy; Otis, Brian P

    2012-08-01

    Rapid development in miniature implantable electronics are expediting advances in neuroscience by allowing observation and control of neural activities. The first stage of an implantable biosignal recording system, a low-noise biopotential amplifier (BPA), is critical to the overall power and noise performance of the system. In order to integrate a large number of front-end amplifiers in multichannel implantable systems, the power consumption of each amplifier must be minimized. This paper introduces a closed-loop complementary-input amplifier, which has a bandwidth of 0.05 Hz to 10.5 kHz, an input-referred noise of 2.2 μ Vrms, and a power dissipation of 12 μW. As a point of comparison, a standard telescopic-cascode closed-loop amplifier with a 0.4 Hz to 8.5 kHz bandwidth, input-referred noise of 3.2 μ Vrms, and power dissipation of 12.5 μW is presented. Also for comparison, we show results from an open-loop complementary-input amplifier that exhibits an input-referred noise of 3.6 μ Vrms while consuming 800 nW of power. The two closed-loop amplifiers are fabricated in a 0.13 μ m CMOS process. The open-loop amplifier is fabricated in a 0.5 μm SOI-BiCMOS process. All three amplifiers operate with a 1 V supply.

  1. Low-Noise Spiral Bevel Gears

    NASA Technical Reports Server (NTRS)

    Lewicki, David G.; Handschuh, Robert F.; Coy, John J.; Henry, Zachary; Thomas, John; Litvin, Faydor L.

    1994-01-01

    Modified spiral bevel gears that generate relatively little noise and vibration designed and fabricated for use in U.S. Army OH-58D helicopter. Noise reduced by 12 to 19 dB. Similar low-noise, low-vibration spiral bevel gears used in other helicopters, with consequent benefits in comfort and health of pilots and passengers, enhancement of pilots' performance and safety through reduction of audible distraction, and reduction in cost and weight of helicopters through reduction in amount of sound-proofing material. Low-noise, low-vibration spiral bevel gears also used in drive axles of cars and trucks for smoother, quieter rides.

  2. Nonlinearly stacked low noise turbofan stator

    NASA Technical Reports Server (NTRS)

    Schuster, William B. (Inventor); Kontos, Karen B. (Inventor); Weir, Donald S. (Inventor); Nolcheff, Nick A. (Inventor); Gunaraj, John A. (Inventor)

    2009-01-01

    A nonlinearly stacked low noise turbofan stator vane having a characteristic curve that is characterized by a nonlinear sweep and a nonlinear lean is provided. The stator is in an axial fan or compressor turbomachinery stage that is comprised of a collection of vanes whose highly three-dimensional shape is selected to reduce rotor-stator and rotor-strut interaction noise while maintaining the aerodynamic and mechanical performance of the vane. The nonlinearly stacked low noise turbofan stator vane reduces noise associated with the fan stage of turbomachinery to improve environmental compatibility.

  3. A novel design of ultra-broadband, high-gain and high-linearity variable gain distributed amplifier in 0.13 μm CMOS technology

    NASA Astrophysics Data System (ADS)

    Baharvand, Zainab; Hakimi, Ahmad; Rashedi, Esmat

    2016-12-01

    A high-gain, high-linearity and ultra-broadband variable gain distributed amplifier (VGDA) based on employing multiple techniques is presented to substantially increase the gain. The complete design is composed of two major parts including a VGDA part followed by a single stage distributed amplifier (SSDA) part. The VGDA part makes it possible to achieve different gain settings. For high gain considerations, the SSDA part cascades with the VGDA part that takes the benefits of the multiplicative gain mechanism. A theory is presented to enhance the linearity without imposing further DC power consumption. This idea has been validated by simulation results as expected. The design is analysed and simulated in the standard 0.13 μm CMOS technology. It presents the large gain tuning range of 35 dB, from -5 dB attenuation gain up to +30 dB maximum amplification gain, in relation to the control voltage (Vctr) that varies between 0.42 and 1.1 V. At the maximum amplification gain setting, it presents a DC up to 16 GHz 3 dB bandwidth, an average noise figure of 3.2 dB and an IIP3 of -2 dB m. Furthermore, it dissipates 46.42 mW from 0.7 and 0.9 V power supplies of the drain lines of VGDA and SSDA parts, respectively. Additionally, the Monte Carlo (MC) simulation has been performed to predict an estimate of the accuracy of performance of the proposed design under various conditions.

  4. CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

    NASA Astrophysics Data System (ADS)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Hao, Yi-Fan; Shi, Jian-Liang; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    A high-linearity CMOS temperature sensor with pulse output is presented. The temperature core is a resistively degenerated common-source amplifier which gate is biased by a proportional-to-absolute-temperature (PTAT) voltage generator. The source resistor is made of polysilicon which resistance has a PTAT characteristic. The current flowing through the resistor exhibits a PTAT characteristic with high linearity of 99.99% at least for a temperature range from 0 to 125 °C. The PTAT voltage generator can be adjusted by a bias voltage Vb and hence the PTAT current can also be adjusted by the Vb. The PTAT current is mirrored to an added current controlled oscillator which output pulse frequencies also exhibit a PTAT characteristic. For the chip using the 0.35 µm process, the plots of measured pulse frequencies against temperature exhibit the sensitivity of 2.30 to 2.24 kHz/°C with linearity of more than 99.99% at the Vb of 1 to 1.2 V.

  5. On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS

    NASA Astrophysics Data System (ADS)

    Zhixiong, Ren; Kefeng, Zhang; Lanqi, Liu; Cong, Li; Xiaofei, Chen; Dongsheng, Liu; Zhenglin, Liu; Xuecheng, Zou

    2015-09-01

    Three linear CMOS power amplifiers (PAs) with high output power (more than watt-level output power) for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz PAs using an on-chip parallel combining transformer (PCT) and one 1.95 GHz PA using an on-chip series combining transformer (SCT) to combine output signals of multiple power stages. Furthermore, some linearization techniques including adaptive bias, diode linearizer, multi-gated transistors (MGTR) and the second harmonic control are applied in these PAs. Using the proposed power combiner, these three PAs are designed and fabricated in TSMC 0.18 μm RFCMOS process. According to the measurement results, the proposed two linear 2.4 GHz PAs achieve a gain of 33.2 dB and 34.3 dB, a maximum output power of 30.7 dBm and 29.4 dBm, with 29% and 31.3% of peak PAE, respectively. According to the simulation results, the presented linear 1.95 GHz PA achieves a gain of 37.5 dB, a maximum output power of 34.3 dBm with 36.3% of peak PAE. Project supported by the National Natural Science Foundation of China (No. 61076030).

  6. Development of a low noise readout ASIC for CZT detectors for gamma-ray spectroscopy applications

    NASA Astrophysics Data System (ADS)

    Luo, J.; Deng, Z.; Wang, G.; Li, H.; Liu, Y.

    2012-08-01

    A multi-channel readout ASIC for pixelated CZT detectors has been developed for gamma-ray spectroscopy applications. Each channel consists of a low noise dual-stage charge sensitive amplifier (CSA), a CR-(RC)4 semi-Gaussian shaper and a class-AB output buffer. The equivalent noise charge (ENC) of input PMOS transistor is optimized for 5 pF input capacitance and 1 μs peaking time using gm/ID design methodology. The gain can be adjusted from 100 mV/fC to 400 mV/fC and the peaking time can be adjusted from 1 μs to 4 μs. A 16-channel chip has been designed and fabricated in 0.35 μm 2P4M CMOS technology. The test results show that the chip works well and fully satisfies the design specifications. The ENC was measured to be 72 e + 26 e/pF at 1 μs peaking time and 86 e + 20 e/pF at 4 μs peaking time. The non-uniformity of the channel gain and ENC was less than ±12% and ±11% respectively for 16 channels in one chip. The chip was also tested with a pixelated CZT detector at room temperature. The measured energy resolution at 59.5 keV photopeak of 241Am and 122 keV photopeak of 57Co were 4.5% FWHM and 2.8% FWHM for the central area pixels, respectively.

  7. Frontend Receiver Electronics for High Frequency Monolithic CMUT-on-CMOS Imaging Arrays

    PubMed Central

    Gurun, Gokce; Hasler, Paul; Degertekin, F. Levent

    2012-01-01

    This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for high-frequency intravascular ultrasound imaging. A custom 8-inch wafer is fabricated in a 0.35 μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulse-echo measurement. Transducer noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 MHz to 20 MHz. PMID:21859585

  8. Front-end receiver electronics for high-frequency monolithic CMUT-on-CMOS imaging arrays.

    PubMed

    Gurun, Gokce; Hasler, Paul; Degertekin, F

    2011-08-01

    This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for highfrequency intravascular ultrasound imaging. A custom 8-inch (20-cm) wafer is fabricated in a 0.35-μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range, and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input-referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulseecho measurement. Transducer-noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 to 20 MHz.

  9. Low-noise superheterodyne receiver array for ECEI and MIR

    NASA Astrophysics Data System (ADS)

    Wang, Yan; Yu, Jo-Han; Pham, Anh-Vu; Domier, Calvin; Tobias, Benjamin; Luhmann, Neville

    2016-10-01

    Superheterodyne receiver array has been widely used in ECEI and MIR to extract the temperature and plasma density fluctuation, respectively. The system downconverts RF signals to a much lower IF for easy filtering and processing. The current system employs Schottky diode as the mixing element, which is mounted directly on the antenna. The LO and RF signals illuminate the antenna simultaneously to produce desired IF signals. One big drawback is that the system generates large amount of noise due to the lack of low-noise amplifier (LNA) before the mixer. It also requires complicated lens system in order to facilitate simultaneous RF and LO illumination. Additionally, it's difficult to shield the circuits from stray heating power and interfering signals. New receivers are developed for improving the signal quality as well as the ease of measurement. The new circuit consists of compact GaAs MMICs integrated on low-loss liquid crystal polymer substrate. Low noise and high gain GaAs LNAs, mixers and even complete receivers are available as off-the-shelf chips for V and W band applications. Employing MMICs in plasma diagnostics not only dramatically improves signal integrity, the on-board LO signal supply also eliminates the lenses for simultaneous RF and LO illumination. Additionally, the new receiver employs horn antennas, which produces directive radiation and strong interference attenuation.

  10. The low noise limit in gene expression

    SciTech Connect

    Dar, Roy D.; Weinberger, Leor S.; Cox, Chris D.; Simpson, Michael L.; Razooky, Brandon S.

    2015-10-21

    Protein noise measurements are increasingly used to elucidate biophysical parameters. Unfortunately noise analyses are often at odds with directly measured parameters. Here we show that these inconsistencies arise from two problematic analytical choices: (i) the assumption that protein translation rate is invariant for different proteins of different abundances, which has inadvertently led to (ii) the assumption that a large constitutive extrinsic noise sets the low noise limit in gene expression. While growing evidence suggests that transcriptional bursting may set the low noise limit, variability in translational bursting has been largely ignored. We show that genome-wide systematic variation in translational efficiency can-and in the case of E. coli does-control the low noise limit in gene expression. Therefore constitutive extrinsic noise is small and only plays a role in the absence of a systematic variation in translational efficiency. Lastly, these results show the existence of two distinct expression noise patterns: (1) a global noise floor uniformly imposed on all genes by expression bursting; and (2) high noise distributed to only a select group of genes.

  11. The low noise limit in gene expression

    DOE PAGES

    Dar, Roy D.; Weinberger, Leor S.; Cox, Chris D.; ...

    2015-10-21

    Protein noise measurements are increasingly used to elucidate biophysical parameters. Unfortunately noise analyses are often at odds with directly measured parameters. Here we show that these inconsistencies arise from two problematic analytical choices: (i) the assumption that protein translation rate is invariant for different proteins of different abundances, which has inadvertently led to (ii) the assumption that a large constitutive extrinsic noise sets the low noise limit in gene expression. While growing evidence suggests that transcriptional bursting may set the low noise limit, variability in translational bursting has been largely ignored. We show that genome-wide systematic variation in translational efficiencymore » can-and in the case of E. coli does-control the low noise limit in gene expression. Therefore constitutive extrinsic noise is small and only plays a role in the absence of a systematic variation in translational efficiency. Lastly, these results show the existence of two distinct expression noise patterns: (1) a global noise floor uniformly imposed on all genes by expression bursting; and (2) high noise distributed to only a select group of genes.« less

  12. The Low Noise Limit in Gene Expression

    PubMed Central

    Dar, Roy D.; Razooky, Brandon S.; Weinberger, Leor S.; Cox, Chris D.; Simpson, Michael L.

    2015-01-01

    Protein noise measurements are increasingly used to elucidate biophysical parameters. Unfortunately noise analyses are often at odds with directly measured parameters. Here we show that these inconsistencies arise from two problematic analytical choices: (i) the assumption that protein translation rate is invariant for different proteins of different abundances, which has inadvertently led to (ii) the assumption that a large constitutive extrinsic noise sets the low noise limit in gene expression. While growing evidence suggests that transcriptional bursting may set the low noise limit, variability in translational bursting has been largely ignored. We show that genome-wide systematic variation in translational efficiency can–and in the case of E. coli does–control the low noise limit in gene expression. Therefore constitutive extrinsic noise is small and only plays a role in the absence of a systematic variation in translational efficiency. These results show the existence of two distinct expression noise patterns: (1) a global noise floor uniformly imposed on all genes by expression bursting; and (2) high noise distributed to only a select group of genes. PMID:26488303

  13. A battery-based, low-noise voltage source

    NASA Astrophysics Data System (ADS)

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of ±15 and ±5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7×10-7 over 6.5 h and a noise level equal or smaller than 30 nV/√Hz is achieved.

  14. A battery-based, low-noise voltage source.

    PubMed

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of +/-15 and +/-5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7 x 10(-7) over 6.5 h and a noise level equal or smaller than 30 nV/square root(Hz) is achieved.

  15. CAOS-CMOS camera.

    PubMed

    Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

    2016-06-13

    Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

  16. An integrated CMOS detection system for optical short-pulse

    NASA Astrophysics Data System (ADS)

    Kim, Chang-Gun; Hong, Nam-Pyo; Choi, Young-Wan

    2014-03-01

    We present design of a front-end readout system consisting of charge sensitive amplifier (CSA) and pulse shaper for detection of stochastic and ultra-small semiconductor scintillator signal. The semiconductor scintillator is double sided silicon detector (DSSD) or avalanche photo detector (APD) for high resolution and peak signal reliability of γ-ray or X-ray spectroscopy. Such system commonly uses low noise multichannel CSA. Each CSA in multichannel includes continuous reset system based on tens of MΩ and charge-integrating capacitor in feedback loop. The high value feedback resistor requires large area and huge power consumption for integrated circuits. In this paper, we analyze these problems and propose a CMOS short pulse detection system with a novel CSA. The novel CSA is composed of continuous reset system with combination of diode connected PMOS and 100 fF. This structure has linearity with increased input charge quantity from tens of femto-coulomb to pico-coulomb. Also, the front-end readout system includes both slow and fast shapers for detecting CSA output and preventing pile-up distortion. Shaping times of fast and slow shapers are 150 ns and 1.4 μs, respectively. Simulation results of the CMOS detection system for optical short-pulse implemented in 0.18 μm CMOS technology are presented.

  17. A CMOS wideband front-end chip using direct RF sampling mixer with embedded discrete-time filtering

    NASA Astrophysics Data System (ADS)

    Jiangtao, Xu; Saavedra, Carlos E.; Guican, Chen

    2011-08-01

    A CMOS wideband front-end IC is demonstrated in this paper. It consists of a low noise transconductance amplifier (LNTA) and a direct RF sampling mixer (DSM) with embedded programmable discrete-time filtering. The LNTA has the features of 0.5-6 GHz wideband, wideband input matching and low noise. The embedded filter following the DSM operates in discrete-time charge domain, filtering the aliasing signals and interferences while controlling the IF bandwidth according to the clock frequency. The measured NF of the front-end was below 7 dB throughout the whole band from 0.5 to 6 GHz. It shows a conversion gain of 12.6 dB and IP1dB of -7.5 dBm at 2.4 GHz. It occupies a chip area of 0.23 mm2 and consumes 14 mA DC current.

  18. High responsivity CMOS imager pixel implemented in SOI technology

    NASA Technical Reports Server (NTRS)

    Zheng, X.; Wrigley, C.; Yang, G.; Pain, B.

    2000-01-01

    Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

  19. Hybrid matrix amplifier

    DOEpatents

    Martens, Jon S.; Hietala, Vincent M.; Plut, Thomas A.

    1995-01-01

    The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N.times.M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise.

  20. Hybrid matrix amplifier

    DOEpatents

    Martens, J.S.; Hietala, V.M.; Plut, T.A.

    1995-01-03

    The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N[times]M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise. 6 figures.

  1. Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Bo, Gan; Tingcun, Wei; Wu, Gao; Yongcai, Hu

    2016-06-01

    In this paper, we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit (ASIC) dedicated to CdZnTe detectors for a hard X-ray imager in space applications. The readout channel is comprised of a charge sensitive amplifier, a CR-RC shaping amplifier, an analog output buffer, a fast shaper, and a discriminator. An 8-channel prototype ASIC is designed and fabricated in TSMC 0.35-μm mixed-signal CMOS technology, the die size of the prototype chip is 2.2 × 2.2 mm2. The input energy range is from 5 to 350 keV. For this 8-channel prototype ASIC, the measured electrical characteristics are as follows: the overall gain of the readout channel is 210 V/pC, the linearity error is less than 2%, the crosstalk is less than 0.36%, The equivalent noise charge of a typical channel is 52.9 e- at zero farad plus 8.2 e- per picofarad, and the power consumption is less than 2.4 mW/channel. Through the measurement together with a CdZnTe detector, the energy resolution is 5.9% at the 59.5-keV line under the irradiation of the radioactive source 241Am. The radiation effect experiments show that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad(Si). Project supported by the National Key Scientific Instrument and Equipment Development Project (No. 2011YQ040082), the National Natural Science Foundation of China (Nos. 11475136, 11575144, 61176094), and the Shaanxi Natural Science Foundation of China (No. 2015JM1016).

  2. European low-noise MMIC technologies for cryogenic millimetre wave radio astronomical applications

    NASA Astrophysics Data System (ADS)

    Cremonini, Andrea; Mariotti, Sergio; Valenziano, Luca

    2012-09-01

    The Low Noise technology has a paramount relevance on radiotelescopes and radiometers performances. Its influence on sensitivity and temporal stability has a deep impact on obtainable scientific results. As well known, front end active part of scientific instruments are cryocooled in order to drastically reduce the intrinsic thermal noise generated by its electronic parts and consequently increase the sensitivity. In this paper we will describe the obtained results by an Italian Space Agency funded activity. The aim is to validate European MMIC Low Noise technologies and designs for cryogenic environments in the range of millimetre wave. As active device, HEMT (High Electron Mobility Transistor) are considered the best device for high frequency and low noise cryo applications. But not all the semiconductor foundry process are suitable for applications in such environment. Two European Foundries has been selected and two different HEMT based Low Noise Amplifiers have been designed and produced. The main goal of this activity is identify an European technology basement for space and ground based low noise cryogenic applications. Designs, layout, architectures, foundry processes and results will be compared.

  3. A low-noise 64-channel front-end readout ASIC for CdZnTe detectors aimed to hard X-ray imaging systems

    NASA Astrophysics Data System (ADS)

    Gan, B.; Wei, T.; Gao, W.; Liu, H.; Hu, Y.

    2016-04-01

    In this paper, we report on the recent development of a 64-channel low-noise front-end readout ASIC for CdZnTe detectors aimed to hard X-ray imaging systems. The readout channel is comprised of a charge sensitive amplifier, a leakage current compensation circuit, a CR-RC shaper, two S-K filters, an inverse proportional amplifier, a peak-detect-and-hold circuit, a discriminator and trigger logic, a time sequence control circuit and a driving buffer. The readout ASIC is implemented in TSMC 0.35 μm mixed-signal CMOS technology, the die size of the prototype chip is 2.7 mm×8.0 mm. The overall gain of the readout channel is 200 mV/fC, the power consumption is less than 8 mW/channel, the linearity error is less than 1%, the inconsistency among the channels is less than 2.86%, and the equivalent noise charge of a typical channel is 66 e- at zero farad plus 14 e- per picofarad. By connecting this readout ASIC to an 8×8 pixel CdZnTe detector, we obtained an energy spectrum, the energy resolution of which is 4.5% at the 59.5 keV line of 241Am source.

  4. A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging

    NASA Astrophysics Data System (ADS)

    Shrestha, Sumeet; Kamehama, Hiroki; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

    2015-08-01

    This paper presents a low-noise wide-dynamic-range pixel design for a high-energy particle detector in astronomical applications. A silicon on insulator (SOI) based detector is used for the detection of wide energy range of high energy particles (mainly for X-ray). The sensor has a thin layer of SOI CMOS readout circuitry and a thick layer of high-resistivity detector vertically stacked in a single chip. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. The event detection circuit consisting of a comparator and logic circuits which detect the incidence of high energy particle categorizes the incident photon it into two energy groups using an appropriate energy threshold and generate a two-bit code for an event and energy level. The code for energy level is then used for selection of the gain of the in-pixel amplifier for the detected signal, providing a function of high-dynamic-range signal measurement. The two-bit code for the event and energy level is scanned in the event scanning block and the signals from the hit pixels only are read out. The variable-gain in-pixel amplifier uses a continuous integrator and integration-time control for the variable gain. The proposed design allows the small signal detection and wide dynamic range due to the adaptive gain technique and capability of correlated double sampling (CDS) technique of kTC noise canceling of the charge detector.

  5. A novel CMOS digital pixel sensor for 1D barcode scanning

    NASA Astrophysics Data System (ADS)

    Yan, Mei; DeGeronimo, Gianluigi; O'Connor, Paul; Carlson, Bradley S.

    2004-06-01

    A 1-D CMOS digital pixel image sensor system architecture is presented. Each pixel contains a photodiode, a low-power charge-sensitive amplifier, low noise sample/hold circuit, an 8-bit single-slope ADC, a 12-bit shift register and timing & control logic. The pixel is laid out on a 4μm pitch to enable a cost efficient implementation of high-resolution pixel arrays. Fixed pattern noise (FPN) is reduced by a charge-sensitive feedback amplifier, and the reset noise is cancelled by correlated double sampling read out. A prototype chip containing 512 pixels has been fabricated in the TSMC .25um logic process. A 40μV/e- conversion gain is measured with 100 e- rms read noise.

  6. Integration of solid-state nanopores in a 0.5 μm CMOS foundry process.

    PubMed

    Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

    2013-04-19

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA-base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide-semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor's 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the n+ polysilicon/SiO2/n+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3, which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3.

  7. Integration of solid-state nanopores in a 0.5 μm cmos foundry process

    PubMed Central

    Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

    2013-01-01

    High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor’s 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the N+ polysilicon/SiO2/N+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3 which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3. PMID:23519330

  8. 0.18 um 3.1-10.6 GHz CMOS UWB LNA with 25±1dB gain

    NASA Astrophysics Data System (ADS)

    Shamsadini, Shila; Kashani, Farokh Hojat; Bathaei, Neda

    2011-05-01

    A 3.1-10.6 GHz ultra-wideband low noise-amplifier (UWB LNA) using standard 0.18 um CMOS technology which is applicable in telecommunication has been reported. A two-stage, common-gate in cascade with cascode, UWB LNA has been proposed to achieve more than 10 dB input and output return loss, maximum gain of 26 dB, and NF of 2.9 dB over the full frequency band. The proposed LNA consumes 10 mW from 1.8 V supply. The designed LNA has an excellent high gain in comparison with previous works.

  9. Low noise and conductively cooled microchannel plates

    NASA Technical Reports Server (NTRS)

    Feller, W. B.

    1990-01-01

    Microchannel plate (MCP) dynamic range has recently been enhanced for both very low and very high input flux conditions. Improvements in MCP manufacturing technology reported earlier have led to MCPs with substantially reduced radioisotope levels, giving dramatically lower internal background-counting rates. An update is given on the Galileo low noise MCP. Also, new results in increasing the MCP linear counting range for high input flux densities are presented. By bonding the active face of a very low resistance MCP (less than 1 megaohm) to a substrate providing a conductive path for heat transport, the bias current limit (hence, MCP output count rate limit) can be increased up to two orders of magnitude. Normal pulse-counting MCP operation was observed at bias currents of several mA when a curved-channel MCP (80:1) was bonded to a ceramic multianode substrate; the MCP temperature rise above ambient was less than 40 C.

  10. Low-noise fan exit guide vanes

    NASA Technical Reports Server (NTRS)

    Jones, Michael G. (Inventor); Parrott, Tony L. (Inventor); Heidelberg, Laurence J. (Inventor); Envia, Edmane (Inventor)

    2008-01-01

    Low-noise fan exit guide vanes are disclosed. According to the present invention a fan exit guide vane has an outer shell substantially shaped as an airfoil and defining an interior cavity. A porous portion of the outer shell allows communication between the fluctuations in the air passing over the guide vane and the interior cavity. At least one acoustically resonant chamber is located within the interior cavity. The resonant chamber is in communication with the porous portion of the outer perimeter. The resonant chamber is configured to reduce the noise generated at a predetermined frequency. In various preferred embodiments, there is a plurality of acoustically resonant chambers located within the interior cavity. The resonant chambers can be separated by one or more partitions within the interior cavity. In these embodiments, the resonant chambers can be configured to reduce the noise generated over a range of predetermined frequencies.

  11. Forward sweep, low noise rotor blade

    NASA Technical Reports Server (NTRS)

    Brooks, Thomas F. (Inventor)

    1994-01-01

    A forward-swept, low-noise rotor blade includes an inboard section, an aft-swept section, and a forward-swept outboard section. The rotor blade reduces the noise of rotorcraft, including both standard helicopters and advanced systems such as tiltrotors. The primary noise reduction feature is the forward sweep of the planform over a large portion of the outer blade radius. The rotor blade also includes an aft-swept section. The purpose of the aft-swept region is to provide a partial balance to pitching moments produced by the outboard forward-swept portion of the blade. The noise source showing maximum noise reduction is blade-vortex interaction (BVI) noise. Also reduced are thickness, noise, high speed impulsive noise, cabin vibration, and loading noise.

  12. Low noise and conductively cooled microchannel plates

    NASA Technical Reports Server (NTRS)

    Feller, W. B.

    1990-01-01

    Microchannel plate (MCP) dynamic range has recently been enhanced for both very low and very high input flux conditions. Improvements in MCP manufacturing technology reported earlier have led to MCPs with substantially reduced radioisotope levels, giving dramatically lower internal background-counting rates. An update is given on the Galileo low noise MCP. Also, new results in increasing the MCP linear counting range for high input flux densities are presented. By bonding the active face of a very low resistance MCP (less than 1 megaohm) to a substrate providing a conductive path for heat transport, the bias current limit (hence, MCP output count rate limit) can be increased up to two orders of magnitude. Normal pulse-counting MCP operation was observed at bias currents of several mA when a curved-channel MCP (80:1) was bonded to a ceramic multianode substrate; the MCP temperature rise above ambient was less than 40 C.

  13. Low noise and conductively cooled microchannel plates

    NASA Astrophysics Data System (ADS)

    Feller, W. B.

    1990-07-01

    Microchannel plate (MCP) dynamic range has recently been enhanced for both very low and very high input flux conditions. Improvements in MCP manufacturing technology reported earlier have led to MCPs with substantially reduced radioisotope levels, giving dramatically lower internal background-counting rates. An update is given on the Galileo low noise MCP. Also, new results in increasing the MCP linear counting range for high input flux densities are presented. By bonding the active face of a very low resistance MCP (less than 1 megaohm) to a substrate providing a conductive path for heat transport, the bias current limit (hence, MCP output count rate limit) can be increased up to two orders of magnitude. Normal pulse-counting MCP operation was observed at bias currents of several mA when a curved-channel MCP (80:1) was bonded to a ceramic multianode substrate; the MCP temperature rise above ambient was less than 40 C.

  14. Low Noise Borehole Triaxial Seismometer Phase II

    SciTech Connect

    Kerr, James D; McClung, David W

    2006-11-06

    This report describes the preliminary design and the effort to date of Phase II of a Low Noise Borehole Triaxial Seismometer for use in networks of seismic stations for monitoring underground nuclear explosions. The design uses the latest technology of broadband seismic instrumentation. Each parameter of the seismometer is defined in terms of the known physical limits of the parameter. These limits are defined by the commercially available components, and the physical size constraints. A theoretical design is proposed, and a preliminary prototype model of the proposed instrument has been built. This prototype used the sensor module of the KS2000. The installation equipment (hole locks, etc.) has been designed and one unit has been installed in a borehole. The final design of the sensors and electronics and leveling mechanism is in process. Noise testing is scheduled for the last quarter of 2006.

  15. An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS

    NASA Astrophysics Data System (ADS)

    Yanbin, Luo; Chengyan, Ma; Yebing, Gan; Min, Qian; Tianchun, Ye

    2015-10-01

    An inductorless multi-mode RF front end for a global navigation satellite system (GNSS) receiver is presented. Unlike the traditional topology of a low noise amplifier (LNA), the inductorless current-mode noise-canceling LNA is applied in this design. The high-impedance-input radio frequency amplifier (RFA) further amplifies the GNSS signals and changes the single-end signal path into fully differential. The passive mixer down-converts the signals to the intermediate frequency (IF) band and conveys the signals to the analogue blocks. The local oscillator (LO) buffer divides the output frequency of the voltage controlled oscillator (VCO) and generates 25%-duty-cycle quadrature square waves to drive the mixer. Our measurement results display that the implemented RF front end achieves good overall performance while consuming only 6.7 mA from 1.2 V supply. The input return loss is better than -26 dB and the ultra low noise figure of 1.43 dB leads to high sensitivity of the GNSS receiver. The input 1 dB compression point is -43 dBm at the high gain of 48 dB. The designed circuit is fabricated in 55 nm CMOS technology and the die area, which is much smaller than traditional circuit, is around 220 × 280 μm2.

  16. Development of an ultra low noise, miniature signal conditioning device for vestibular evoked response recordings

    PubMed Central

    2014-01-01

    Background Inner ear evoked potentials are small amplitude (<1 μVpk) signals that require a low noise signal acquisition protocol for successful extraction; an existing such technique is Electrocochleography (ECOG). A novel variant of ECOG called Electrovestibulography (EVestG) is currently investigated by our group, which captures vestibular responses to a whole body tilt. The objective is to design and implement a bio-signal amplifier optimized for ECOG and EVestG, which will be superior in noise performance compared to low noise, general purpose devices available commercially. Method A high gain configuration is required (>85 dB) for such small signal recordings; thus, background power line interference (PLI) can have adverse effects. Active electrode shielding and driven-right-leg circuitry optimized for EVestG/ECOG recordings were investigated for PLI suppression. A parallel pre-amplifier design approach was investigated to realize low voltage, and current noise figures for the bio-signal amplifier. Results In comparison to the currently used device, PLI is significantly suppressed by the designed prototype (by >20 dB in specific test scenarios), and the prototype amplifier generated noise was measured to be 4.8 nV/Hz @ 1 kHz (0.45 μVRMS with bandwidth 10 Hz-10 kHz), which is lower than the currently used device generated noise of 7.8 nV/Hz @ 1 kHz (0.76 μVRMS). A low noise (<1 nV/Hz) radio frequency interference filter was realized to minimize noise contribution from the pre-amplifier, while maintaining the required bandwidth in high impedance measurements. Validation of the prototype device was conducted for actual ECOG recordings on humans that showed an increase (p < 0.05) of ~5 dB in Signal-to-Noise ratio (SNR), and for EVestG recordings using a synthetic ear model that showed a ~4% improvement (p < 0.01) over the currently used amplifier. Conclusion This paper presents the design and evaluation of an ultra-low noise and miniaturized bio

  17. Low Noise Exhaust Nozzle Technology Development

    NASA Technical Reports Server (NTRS)

    Majjigi, R. K.; Balan, C.; Mengle, V.; Brausch, J. F.; Shin, H.; Askew, J. W.

    2005-01-01

    NASA and the U.S. aerospace industry have been assessing the economic viability and environmental acceptability of a second-generation supersonic civil transport, or High Speed Civil Transport (HSCT). Development of a propulsion system that satisfies strict airport noise regulations and provides high levels of cruise and transonic performance with adequate takeoff performance, at an acceptable weight, is critical to the success of any HSCT program. The principal objectives were to: 1. Develop a preliminary design of an innovative 2-D exhaust nozzle with the goal of meeting FAR36 Stage III noise levels and providing high levels of cruise performance with a high specific thrust for Mach 2.4 HSCT with a range of 5000 nmi and a payload of 51,900 lbm, 2. Employ advanced acoustic and aerodynamic codes during preliminary design, 3. Develop a comprehensive acoustic and aerodynamic database through scale-model testing of low-noise, high-performance, 2-D nozzle configurations, based on the preliminary design, and 4. Verify acoustic and aerodynamic predictions by means of scale-model testing. The results were: 1. The preliminary design of a 2-D, convergent/divergent suppressor ejector nozzle for a variable-cycle engine powered, Mach 2.4 HSCT was evolved, 2. Noise goals were predicted to be achievable for three takeoff scenarios, and 3. Impact of noise suppression, nozzle aerodynamic performance, and nozzle weight on HSCT takeoff gross weight were assessed.

  18. Forward sweep, low noise rotor blade

    NASA Technical Reports Server (NTRS)

    Brooks, Thomas F. (Inventor)

    1996-01-01

    A forward-swept, low-noise rotor blade includes an inboard section, an aft-swept section and a forward-swept outboard section. The rotor blade reduces the noise of rotorcraft, including both standard helicopters and advanced systems such as tiltrotors. The primary noise reduction feature is the forward sweep of the planform over a large portion of the outer blade radius. The rotor blade also includes an aft-swept section. The purpose of the aft-swept region is to provide a partial balance to pitching moments produced by the outboard forward-swept portion of the blade. The rotor blade has a constant chord width; or has a chord width which decreases linearly along the entire blade span; or combines constant and decreasing chord widths, wherein the blade is of constant chord width from the blade root to a certain location on the rotor blade, then decreases linearly to the blade tip thereafter. The noise source showing maximum noise reduction is blade-vortex interaction (BVI) noise. Also reduced are thickness, noise, high speed impulsive noise, cabin vibration and loading noise.

  19. Low Noise Camera for Suborbital Science Applications

    NASA Technical Reports Server (NTRS)

    Hyde, David; Robertson, Bryan; Holloway, Todd

    2015-01-01

    Low-cost, commercial-off-the-shelf- (COTS-) based science cameras are intended for lab use only and are not suitable for flight deployment as they are difficult to ruggedize and repackage into instruments. Also, COTS implementation may not be suitable since mission science objectives are tied to specific measurement requirements, and often require performance beyond that required by the commercial market. Custom camera development for each application is cost prohibitive for the International Space Station (ISS) or midrange science payloads due to nonrecurring expenses ($2,000 K) for ground-up camera electronics design. While each new science mission has a different suite of requirements for camera performance (detector noise, speed of image acquisition, charge-coupled device (CCD) size, operation temperature, packaging, etc.), the analog-to-digital conversion, power supply, and communications can be standardized to accommodate many different applications. The low noise camera for suborbital applications is a rugged standard camera platform that can accommodate a range of detector types and science requirements for use in inexpensive to mid range payloads supporting Earth science, solar physics, robotic vision, or astronomy experiments. Cameras developed on this platform have demonstrated the performance found in custom flight cameras at a price per camera more than an order of magnitude lower.

  20. A low-noise beta-radiometer

    SciTech Connect

    Antonenko, G.I.; Savina, V.I.

    1995-12-01

    The two-channel detector for a low-noise (down to 0.06 sec{sup -1}) beta-radiometer for measuring the mass concentration of {sup 90}Sr in the environment after the chemical extraction of strontium by the oxalate-nitrate method was certified at the D.I. Mendeleev Institute of Metrology (certificate No. 137/93). A detector unit using two end-window self-quenching counters with thin input windows (8 {mu}m thick and 60 mm in diameter) operating as a Geiger-Mueller counter and filled with a mixture of 90% helium (atomic gas) and 10% ethanol (organic molecules) can measure the beta-activity of two substrates concurrently. It is often used to detect the beta-radiation of {sup 90}Sr. This isotope produces particles with energies ranging from 180 to 1000 keV, and the detection efficiency is 50% at a level of 0.1 Bq after measuring for 20 min with an uncertainty of 25%.

  1. 16 channel GHz low noise SWIR photoreceivers

    NASA Astrophysics Data System (ADS)

    Bai, Xiaogang; Yuan, Ping; McDonald, Paul; Boisvert, Joseph; Chang, James; Woo, Robyn; Labios, Eduaro; Sudharsanan, Rengarajan; Krainak, Michael; Yang, Guangning; Sun, Xiaoli; Lu, Wei; McIntosh, Dion; Zhou, Qiugui; Campbell, Joe

    2012-06-01

    Future NASA light detection and ranging (LIDAR) mapping systems require multi-channel receivers with high sensitivity and bandwidth operating at 1-1.5 μm wavelengths. One of the ways to improve the system performance is to improve the sensitivity of photoreceiver. InGaAs avalanche photodiode (APD) sensor technology is considered for this wavelength region because of high reliability. However, commercially available InGaAs APDs have low sensitivity due to the high excess-noise of InP material. Spectrolab has been developing low excess noise InGaAs avalanche photodiodes (APDs) with impact ionization engineering (I2E) structures and recently, APDs with excess noise factor of 0.15 have been demonstrated using an I2E design. Single channel photoreceivers built using low noise I2E APDs show a noise equivalent power (NEP) of 150 fW/rt(Hz) over a bandwidth of 1 GHz, a record for InGaAs based APDs. A 16 channel GHz SWIR photoreceiver was designed and built at Spectrolab. The photoreceiver was designed to work with a custom fiber bundle which couples the light from telescope to detectors. The photoreceiver shows a system level NEP less than 300 fW/rt(Hz) with 1 GHz bandwidth.

  2. A gimbaled low noise momentum wheel

    NASA Astrophysics Data System (ADS)

    Bichler, U.; Eckardt, T.

    1993-05-01

    The bus actuators are the heart and at the same time the Achilles' heel of accurate spacecraft stabilization systems, because both their performance and their perturbations can have a deciding influence on the achievable pointing accuracy of the mission. The main task of the attitude actuators, which are mostly wheels, is the generation of useful torques with sufficiently high bandwidth, resolution and accuracy. This is because the bandwidth of the whole attitude control loop and its disturbance rejection capability is dependent upon these factors. These useful torques shall be provided, without - as far as possible - parasitic noise like unbalance forces and torques and harmonics. This is because such variable frequency perturbations excite structural resonances which in turn disturb the operation of sensors and scientific instruments. High accuracy spacecraft will further require bus actuators for the three linear degrees of freedom (DOF) to damp structural oscillations excited by various sources. These actuators have to cover the dynamic range of these disturbances. Another interesting feature, which is not necessarily related to low noise performance, is a gimballing capability which enables, in a certain angular range, a three axis attitude control with only one wheel. The herein presented Teldix MWX, a five degree of freedom Magnetic Bearing Momentum Wheel, incorporates all the above required features. It is ideally suited to support, as a gyroscopic actuator in the attitude control system, all High Pointing Accuracy and Vibration Sensitive space missions.

  3. A gimbaled low noise momentum wheel

    NASA Technical Reports Server (NTRS)

    Bichler, U.; Eckardt, T.

    1993-01-01

    The bus actuators are the heart and at the same time the Achilles' heel of accurate spacecraft stabilization systems, because both their performance and their perturbations can have a deciding influence on the achievable pointing accuracy of the mission. The main task of the attitude actuators, which are mostly wheels, is the generation of useful torques with sufficiently high bandwidth, resolution and accuracy. This is because the bandwidth of the whole attitude control loop and its disturbance rejection capability is dependent upon these factors. These useful torques shall be provided, without - as far as possible - parasitic noise like unbalance forces and torques and harmonics. This is because such variable frequency perturbations excite structural resonances which in turn disturb the operation of sensors and scientific instruments. High accuracy spacecraft will further require bus actuators for the three linear degrees of freedom (DOF) to damp structural oscillations excited by various sources. These actuators have to cover the dynamic range of these disturbances. Another interesting feature, which is not necessarily related to low noise performance, is a gimballing capability which enables, in a certain angular range, a three axis attitude control with only one wheel. The herein presented Teldix MWX, a five degree of freedom Magnetic Bearing Momentum Wheel, incorporates all the above required features. It is ideally suited to support, as a gyroscopic actuator in the attitude control system, all High Pointing Accuracy and Vibration Sensitive space missions.

  4. GHz low noise short wavelength infrared (SWIR) photoreceivers

    NASA Astrophysics Data System (ADS)

    Bai, Xiaogang; Yuan, Ping; McDonald, Paul; Boisvert, Joseph; Chang, James; Woo, Robyn; Labios, Eduardo; Sudharsanan, Rengarajan; Krainak, Michael; Yang, Guangning; Sun, Xiaoli; Lu, Wei; McIntosh, Dion; Zhou, Qiugui; Campbell, Joe

    2011-06-01

    Next generation LIDAR mapping systems require multiple channels of sensitive photoreceivers that operate in the wavelength region of 1.06 to 1.55 microns, with GHz bandwidth and sensitivity less than 300 fW/√Hz. Spectrolab has been developing high sensitivity photoreceivers using InAlAs impact ionization engineering (I2E) avalanche photodiodes (APDs) structures for this application. APD structures were grown using metal organic vapor epitaxy (MOVPE) and mesa devices were fabricated using these structures. We have achieved low excess noise at high gain in these APD devices; an impact ionization parameter, k, of about 0.15 has been achieved at gains >20 using InAlAs/InGaAlAs as a multiplier layer. Electrical characterization data of these devices show dark current less than 2 nA at a gain of 20 at room temperature; and capacitance of 0.4 pF for a typical 75 micron diameter APD. Photoreceivers were built by integrating I2E APDs with a low noise GHz transimpedance amplifier (TIA). The photoreceivers showed a bandwidth of 1 GHz and a noise equivalent power (NEP) of 150 fW/rt(Hz) at room temperature.

  5. Design of a CMOS integrated on-chip oscilloscope for spin wave characterization

    NASA Astrophysics Data System (ADS)

    Egel, Eugen; Meier, Christian; Csaba, György; Breitkreutz-von Gamm, Stephan

    2017-05-01

    Spin waves can perform some optically-inspired computing algorithms, e.g. the Fourier transform, directly than it is done with the CMOS logic. This article describes a new approach for on-chip characterization of spin wave based devices. The readout circuitry for the spin waves is simulated with 65-nm CMOS technology models. Commonly used circuits for Radio Frequency (RF) receivers are implemented to detect a sinusoidal ultra-wideband (5-50 GHz) signal with an amplitude of at least 15 μV picked up by a loop antenna. First, the RF signal is amplified by a Low Noise Amplifier (LNA). Then, it is down-converted by a mixer to Intermediate Frequency (IF). Finally, an Operational Amplifier (OpAmp) brings the IF signal to higher voltages (50-300 mV). The estimated power consumption and the required area of the readout circuit is approximately 55.5 mW and 0.168 mm2, respectively. The proposed On-Chip Oscilloscope (OCO) is highly suitable for on-chip spin wave characterization regarding the frequency, amplitude change and phase information. It offers an integrated low power alternative to current spin wave detecting systems.

  6. A Low-Noise, Wideband Preamplifier for a Fourier-Transform Ion Cyclotron Resonance Mass Spectrometer

    PubMed Central

    Mathur, Raman; Knepper, Ronald W.; O'Connor, Peter B.

    2009-01-01

    FTMS performance parameters such as limits of detection, dynamic range, sensitivity, and even mass accuracy and resolution can be greatly improved by enhancing its detection circuit. An extended investigation of significant design considerations for optimal signal-to-noise ratio in an FTMS detection circuit are presented. A low noise amplifier for an FTMS is developed based on the discussed design rules. The amplifier has a gain of ≈ 3500 and a bandwidth of 10 kHz - 1 MHz corresponding to m/z range of 100 Da to 10 kDa (at 7 Tesla). The performance of the amplifier was tested on a MALDI-FTMS, and has demonstrated a 25-fold reduction in noise in a mass spectrum of C60 compared to that of a commercial amplifier. PMID:18029195

  7. e2v CCD and CMOS sensors and systems designed for astronomical applications

    NASA Astrophysics Data System (ADS)

    Jorden, Paul; Jerram, Paul; Jordan, Douglas; Pratlong, Jérôme; Robbins, Mark

    2016-08-01

    e2v continues to evolve its product range of sensors and systems, with CCD and CMOS sensors. We describe recent developments of high performance image sensors and precision system components. Several low noise backthinned CMOS sensors have been developed for scientific applications. CCDs have become larger whilst retaining very low noise and high quantum efficiency. Examples of sensors and sub-systems are presented including the recently completed 1.2 GigaPixel J-PAS cryogenic camera.

  8. Ultra-Low Noise HEMT Device Models: Application of On-Wafer Cryogenic Noise Analysis and Improved Parameter Extraction Techniques

    NASA Technical Reports Server (NTRS)

    Bautista, J. J.; Hamai, M.; Nishimoto, M.; Laskar, J.; Szydlik, P.; Lai, R.

    1995-01-01

    Significant advances in the development of HEMT technology have resulted in high performance cryogenic low noise amplifiers whose noise temperatures are within an order of magnitude of the quantum noise limit. Key to the identification of optimum HEMT structures at cryogenic temperatures is the development of on-wafer noise and device parameter extraction techniques. Techniques and results are described.

  9. Low Noise Research Fan Stage Design

    NASA Technical Reports Server (NTRS)

    Hobbs, David E.; Neubert, Robert J.; Malmborg, Eric W.; Philbrick, Daniel H.; Spear, David A.

    1995-01-01

    This report describes the design of a Low Noise ADP Research Fan stage. The fan is a variable pitch design which is designed at the cruise pitch condition. Relative to the cruise setting, the blade is closed at takeoff and opened for reverse thrust operation. The fan stage is a split flow design with fan exit guide vanes and core stators. This fan stage design was combined with a nacelle and engine core duct to form a powered fan/nacelle, subscale model. This model is intended for use in aerodynamic performance, acoustic and structural testing in a wind tunnel. The model has a 22-inch outer fan diameter and a hub-to-top ratio of 0.426 which permits the use of existing NASA fan and cowl force balance designs and rig drive system. The design parameters were selected to permit valid acoustic and aerodynamic comparisons with the PW 17-inch rig previously tested under NASA contract. The fan stage design is described in detail. The results of the design axisymmetric analysis at aerodynamic design condition are included. The structural analysis of the fan rotor and attachment is described including the material selections and stress analysis. The blade and attachment are predicted to have adequate low cycle fatigue life, and an acceptable operating range without resonant stress or flutter. The stage was acoustically designed with airfoil counts in the fan exit guide vane and core stator to minimize noise. A fan-FEGV tone analysis developed separately under NASA contract was used to determine these airfoil counts. The fan stage design was matched to a nacelle design to form a fan/nacelle model for wind tunnel testing. The nacelle design was developed under a separate NASA contract. The nacelle was designed with an axisymmetric inlet, cowl and nozzle for convenience in testing and fabrication. Aerodynamic analysis of the nacelle confirmed the required performance at various aircraft operating conditions.

  10. A very low noise monolithic Horizontal accelerometer.

    NASA Astrophysics Data System (ADS)

    Bertolini, Alessandro; Takamori, Akiteru; Cella, Giancarlo; Fidecaro, Francesco; Francesconi, Mario; Desalvo, Riccardo; Sannibale, Virginio

    2000-04-01

    We present a new low noise, low frequency, horizontal accelerometer. The mechanical design and the machining process aim to improve the sensitivity in the frequency region between 0.01 and 1 Hz, where metal internal friction and thermal elastic effects become critical. The accelerometer mechanics is shaped as a small folded pendulum in order to obtain a very low resonant frequency and low mechanical losses. A folded pendulum is essentially a mass suspended on one side by a simple pendulum and on the other by an inverted pendulum working antagonistically. The straight pendulum positive gravitational spring constant is balanced by the inverted pendulum’s negative one; by changing the center of mass position one can lower arbitrarily the resonant frequency. The only dissipation is in the anelasticity of the mechanical flex joint and in the readout/actuation system. If the spring constant is minimised, the mechanical losses are minimal. The monolithic design of the accelerometer eliminates the stick-and-slip friction localised in the flexure clamps. Low stiffness, 10 micron thick flex joints are achieved by EDM and electropolishing. The instrument is equipped with a low capacitance position sensor; the signal from the sensor is filtered by a PID controller and fed back to the mass through capacitive force actuator for feedback closed-loop operation. The sensor noise matches the expected thermal noise performances, 10-12 m/√Hz , with measuring range of a few microns. The expected sensitivity, less than 10-11 m/ s^2 / √Hz around 150 mHz, is a factor 30 below the state of the art limit. This accelerometer was designed to be integrated in the active control of the LIGO II mirror seismic isolators.

  11. CMOS VLSI Active-Pixel Sensor for Tracking

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

    2004-01-01

    An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

  12. Development of a compact radiation-hardened low-noise front-end readout ASIC for CZT-based hard X-ray imager

    NASA Astrophysics Data System (ADS)

    Gao, W.; Gan, B.; Li, X.; Wei, T.; Gao, D.; Hu, Y.

    2015-04-01

    In this paper, we present the development and performances of a radiation-hardened front-end readout application-specific integrated circuit (ASIC) dedicated to CZT detectors for a hard X-ray imager in space applications. The readout channel consists of a charge sensitive amplifier (CSA), a CR-RC shaper, a fast shaper, a discriminator and a driving buffer. With the additional digital filtering, the readout channel can achieve very low noise performances and low power dissipation. An eight-channel prototype ASIC is designed and fabricated in 0.35 μm CMOS process. The energy range of the detected X-rays is evaluated as 1.45 keV to 281 keV. The gain is larger than 100 mV/fC. The equivalent noise charge (ENC) of the ASIC is 53 e- at zero farad plus 10 e- per picofarad. The power dissipation is less than 4.4 mW/channel. Through the measurement with a CZT detector, the energy resolution is less than 3.45 keV (FWHM) under the irradiation of the radioactive source 241Am. The radiation effect experiments indicate that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad (Si).

  13. Large area CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Turchetta, R.; Guerrini, N.; Sedgwick, I.

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  14. Low-Noise Thz Niobium SIS Mixers

    NASA Astrophysics Data System (ADS)

    Bin, Mei

    1997-09-01

    This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the microstrip lines, we calculated the surface impedance of the Al films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which are among the best reported to date for broadband heterodyne

  15. CMOS Integrated Carbon Nanotube Sensor

    SciTech Connect

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-05-23

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  16. A CMOS image sensor with draining only modulation pixels for fluorescence lifetime imaging

    NASA Astrophysics Data System (ADS)

    Li, Zhuo; Yasutomi, Keita; Takasawa, Taishi; Itoh, Shinya; Kawahito, Shoji

    2011-03-01

    Fluorescence lifetime imaging is becoming a powerful tool in biology. A charge-domain CMOS Fluorescence Lifetime Imaging Microscopy (FLIM) chip using a pinned photo diode (PPD) and the pinned storage diode (PSD) with different depth of potential wells has been previously developed by the authors. However, a transfer gate between PPD and PSD causes charge transfer noise due to traps at the channel surface. This paper presents a time-resolved CMOS image sensor with draining only modulation pixels for fluorescence lifetime imaging, which removes the transfer gate between PPD and PSD. The time windowing is done by draining with a draining gate only, which is attached along the carrier path from PPD to PSD. This allows us to realize a trapping less charge transfer between PPD and PSD, leading to a very low-noise time-resolved signal detection. A video-rate CMOS FLIM chip has been fabricated using 0.18μm standard CMOS pinned diode image sensor process. The pixel consists of a PPD, a PSD, a charge draining gate (TD), a readout transfer gate (TX) between the PSD and the floating diffusion (FD), a reset transistor and a source follower amplifier transistor. The pixel array has 200(Row) x 256(Column) pixels and the pixel pitch is 7.5μm. Fundamental characteristics of the implemented CMOS FLIM chip are measured. The signal intensity of the PSD as a function of the TD gate voltage is also measured. The ratio of the signal for the TD off to the signal for the TD on is 212 : 1.

  17. Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application

    NASA Astrophysics Data System (ADS)

    Zhiqun, Li; Liang, Chen; Hao, Zhang

    2011-10-01

    A new optimization method of a source inductive degenerated low noise amplifier (LNA) with electrostatic discharge protection is proposed. It can achieve power-constrained simultaneous noise and input matching. An analysis of the input impedance and the noise parameters is also given. Based on the developed method, a 2.4 GHz LNA for wireless sensor network application is designed and optimized using 0.18-μm RF CMOS technology. The measured results show that the LNA achieves a noise figure of 1.59 dB, a power gain of 14.12 dB, an input 1 dB compression point of -8 dBm and an input third-order intercept point of 1 dBm. The DC current is 4 mA under a supply of 1.8 V.

  18. Design of a Low Voltage CMOS LNA at 2 GHz with Substrate-Bias

    NASA Astrophysics Data System (ADS)

    Wan Muhamad Hatta, S. F.; Soin, N.

    2008-11-01

    A low-voltage (1.5V), 2 GHz cascode CMOS low noise amplifier (LNA) has been designed and simulated using Silvaco's SMARTSPICE RF. The proposed design employs substrate bias of 0.5V and utilizes inductive source degeneration. This paper further presents an analysis on the effect of substrate bias on the MOSFET's threshold voltage as well as the transconductance. The simulated power gain (S21) is of 5.2 dB and a noise figure (NF) of 2.2975 dB is achieved at the operating frequency of 2 GHz. The Input Referred 1dB Compression Point (P1dB) and the third-order intercept point (IP3) are -12.891 dB and -1.6844 dB respectively.

  19. Low Noise Results From IMS Site Surveys: A Preliminary New High-Frequency Low Noise Model

    NASA Astrophysics Data System (ADS)

    Ebeling, C.; Astiz, L.; Starovoit, Y.; Tavener, N.; Perez, G.; Given, H. K.; Barrientos, S.; Yamamoto, M.; Hfaiedh, M.; Stewart, R.; Estabrook, C.

    2002-12-01

    Since the establishment of the Provisional Technical Secretariat (PTS) of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) Organization, a vigorous seismic site survey program has been carried out to identify locations as necessary for International Monitoring System (IMS) primary and auxiliary seismic stations listed in Annex 1 to the Protocol to the CTBT. The IMS Seismic Section maintains for this purpose a small pool of seismic equipment comprised of Guralp CMG-3T and CMG-3ESP and Streckeisen STS-2 broadband seismometers, and Reftek and Guralp acquisition systems. Seismic site surveys are carried out by conducting continuous measurements of ground motion at temporary installations for approximately five to seven days. Seismometer installation methods, which depend on instrument type and on local conditions, range from placement within small cement-floored subsurface vaults to near-surface burial. Data are sampled at 40 Hz. Seismic noise levels are evaluated through the analysis of power spectral density distributions. Eleven 10.5-minute-long representative de-trended and mean-removed segments each of daytime and night-time data are chosen randomly, but reviewed to avoid event contamination. Fast Fourier Transforms are calculated for the five windows in each of these segments generated using a 50% overlap for Hanning-tapered sections ~200 s long. Instrument responses are removed. To date, 20 site surveys for primary and auxiliary stations have been carried out by the IMS. The sites surveyed represent a variety of physical and geological environments on most continents. The lowest high frequency (>1.4 Hz) noise levels at five sites with igneous or metamorphic geologies were as much as 6 dB below the USGS New Low Noise Model (NLNM) developed by Peterson (1993). These sites were in Oman (local geology consisting of Ordovician metasediments), Egypt (Precambrian granite), Niger (early Proterozoic tonalite and granodiorite), Saudi Arabia (Precambian metasediments), and

  20. Low-noise readout circuit for SWIR focal plane arrays

    NASA Astrophysics Data System (ADS)

    Altun, Oguz; Tasdemir, Ferhat; Nuzumlali, Omer Lutfi; Kepenek, Reha; Inceturkmen, Ercihan; Akyurek, Fatih; Tunca, Can; Akbulut, Mehmet

    2017-02-01

    This paper reports a 640x512 SWIR ROIC with 15um pixel pitch that is designed and fabricated using 0.18um CMOS process. Main challenge of SWIR ROIC design is related to input circuit due to pixel area and noise limitations. In this design, CTIA with single stage amplifier is utilized as input stage. The pixel design has three pixel gain options; High Gain (HG), Medium Gain (MG), and Low Gain (LG) with corresponding Full-Well-Capacities of 18.7ké, 190ké and 1.56Mé, respectively. According to extracted simulation results, 5.9é noise is achieved at HG mode and 200é is achieved at LG mode of operation. The ROIC can be programmed through an SPI interface. It supports 1, 2 and 4 output modes which enables the user to configure the detector to work at 30, 60 and 120fps frame rates. In the 4 output mode, the total power consumption of the ROIC is less than 120mW. The ROIC is powered from a 3.3V analog supply and allows for an output swing range in excess of 2V. Anti-blooming feature is added to prevent any unwanted blooming effect during readout.

  1. Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

    PubMed Central

    Ooi, K. J. A.; Ng, D. K. T.; Wang, T.; Chee, A. K. L.; Ng, S. K.; Wang, Q.; Ang, L. K.; Agarwal, A. M.; Kimerling, L. C.; Tan, D. T. H.

    2017-01-01

    CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a high Kerr nonlinearity (2.8 × 10−13 cm2 W−1), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform. PMID:28051064

  2. Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

    NASA Astrophysics Data System (ADS)

    Ooi, K. J. A.; Ng, D. K. T.; Wang, T.; Chee, A. K. L.; Ng, S. K.; Wang, Q.; Ang, L. K.; Agarwal, A. M.; Kimerling, L. C.; Tan, D. T. H.

    2017-01-01

    CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a high Kerr nonlinearity (2.8 × 10-13 cm2 W-1), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform.

  3. NASA HSR phase 1 low noise nozzle technology program overview

    NASA Technical Reports Server (NTRS)

    Blaha, Bernard J.

    1992-01-01

    The topics covered include the following: supersonic cruise, the High Speed Research (HSR) Program, the High Speed Civil Transport (HSCT) noise challenge, low-noise nozzle technology elements, the HSR Source Noise Reduction Program, and NASA HSR plan propulsion elements.

  4. Design and Measurement of a Low-Noise 64-Channels Front-End Readout ASIC for CdZnTe Detectors

    SciTech Connect

    Gan, Bo; Wei, Tingcun; Gao, Wu; Liu, Hui; Hu, Yann

    2015-07-01

    Cadmium zinc telluride (CdZnTe) detectors, as one of the principal detectors for the next-generation X-ray and γ-ray imagers, have high energy resolution and supporting electrode patterning in the radiation environment at room-temperature. In the present, a number of internationally renowned research institutions and universities are actively using these detector systems to carry out researches of energy spectrum analysis, medical imaging, materials characterization, high-energy physics, nuclear plant monitoring, and astrophysics. As the most important part of the readout system for the CdZnTe detector, the front-end readout application specific integrated circuit (ASIC) would have an important impact on the performances of the whole detector system. In order to ensure the small signal to noise ratio (SNR) and sufficient range of the output signal, it is necessary to design a front-end readout ASIC with very low noise and very high dynamic range. In addition, radiation hardness should be considered when the detectors are utilized in the space applications and high energy physics experiments. In this paper, we present measurements and performances of a novel multi-channel radiation-hardness low-noise front-end readout ASIC for CdZnTe detectors. The readout circuits in each channel consist of charge sensitive amplifier, leakage current compensation circuit (LCC), CR-RC shaper, S-K filter, inverse proportional amplifier, peak detect and hold circuit (PDH), discriminator and trigger logic, time sequence control circuit and driving buffer. All of 64 readout channels' outputs enter corresponding inputs of a 64 channel multiplexer. The output of the mux goes directly out of the chip via the output buffer. The 64-channel readout ASIC is implemented using the TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 2.7 mm x 8 mm. At room temperature, the equivalent noise level of a typical channel reaches 66 e{sup -} (rms) at zero farad for a power

  5. A Low-Noise Delta-Sigma Phase Modulator for Polar Transmitters

    PubMed Central

    Zhou, Bo

    2014-01-01

    A low-noise phase modulator, using finite-impulse-response (FIR) filtering embedded delta-sigma (ΔΣ) fractional-N phase-locked loop (PLL), is fabricated in 0.18 μm CMOS for GSM/EDGE polar transmitters. A simplified digital compensation filter with inverse-FIR and -PLL features is proposed to trade off the transmitter noise and linearity. Experimental results show that the presented architecture performs RF phase modulation well with 20 mW power dissipation from 1.6 V supply and achieves the root-mean-square (rms) and peak phase errors of 4° and 8.5°, respectively. The measured and simulated phase noises of −104 dBc/Hz and −120 dBc/Hz at 400-kHz offset from 1.8-GHz carrier frequency are observed, respectively. PMID:24719578

  6. A low-noise delta-sigma phase modulator for polar transmitters.

    PubMed

    Zhou, Bo

    2014-01-01

    A low-noise phase modulator, using finite-impulse-response (FIR) filtering embedded delta-sigma (ΔΣ) fractional-N phase-locked loop (PLL), is fabricated in 0.18 μ m CMOS for GSM/EDGE polar transmitters. A simplified digital compensation filter with inverse-FIR and -PLL features is proposed to trade off the transmitter noise and linearity. Experimental results show that the presented architecture performs RF phase modulation well with 20 mW power dissipation from 1.6 V supply and achieves the root-mean-square (rms) and peak phase errors of 4° and 8.5°, respectively. The measured and simulated phase noises of -104 dBc/Hz and -120 dBc/Hz at 400-kHz offset from 1.8-GHz carrier frequency are observed, respectively.

  7. A low noise multichannel integrated circuit for recording neuronal signals using microelectrode arrays.

    PubMed

    Dabrowski, W; Grybos, P; Litke, A M

    2004-02-15

    This paper reports on the development of a fully integrated 32-channel integrated circuit (IC) for recording neuronal signals in neurophysiological experiments using microelectrode arrays. The IC consists of 32 channels of low-noise preamplifiers and bandpass filters, and an output analog multiplexer. The continuous-time RC active filters have a typical passband of 20-2000 Hz; the low and the high cut-off frequencies can be separately controlled by external reference currents. This chip provides a satisfactory signal-to-noise ratio for neuronal signals with amplitudes greater than 50 microV. For the nominal passband setting, an equivalent input noise of 3 microV rms has been achieved. A single channel occupies 0.35 mm(2) of silicon area and dissipates 1.7 mW of power. The chip was fabricated in a 0.7 microm CMOS process.

  8. High-performance VGA-resolution digital color CMOS imager

    NASA Astrophysics Data System (ADS)

    Agwani, Suhail; Domer, Steve; Rubacha, Ray; Stanley, Scott

    1999-04-01

    This paper discusses the performance of a new VGA resolution color CMOS imager developed by Motorola on a 0.5micrometers /3.3V CMOS process. This fully integrated, high performance imager has on chip timing, control, and analog signal processing chain for digital imaging applications. The picture elements are based on 7.8micrometers active CMOS pixels that use pinned photodiodes for higher quantum efficiency and low noise performance. The image processing engine includes a bank of programmable gain amplifiers, line rate clamping for dark offset removal, real time auto white balancing, per column gain and offset calibration, and a 10 bit pipelined RSD analog to digital converter with a programmable input range. Post ADC signal processing includes features such as bad pixel replacement based on user defined thresholds levels, 10 to 8 bit companding and 5 tap FIR filtering. The sensor can be programmed via a standard I2C interface that runs on 3.3V clocks. Programmable features include variable frame rates using a constant frequency master clock, electronic exposure control, continuous or single frame capture, progressive or interlace scanning modes. Each pixel is individually addressable allowing region of interest imaging and image subsampling. The sensor operates with master clock frequencies of up to 13.5MHz resulting in 30FPS. A total programmable gain of 27dB is available. The sensor power dissipation is 400mW at full speed of operation. The low noise design yields a measured 'system on a chip' dynamic range of 50dB thus giving over 8 true bits of resolution. Extremely high conversion gain result in an excellent peak sensitivity of 22V/(mu) J/cm2 or 3.3V/lux-sec. This monolithic image capture and processing engine represent a compete imaging solution making it a true 'camera on a chip'. Yet in its operation it remains extremely easy to use requiring only one clock and a 3.3V power supply. Given the available features and performance levels, this sensor will be

  9. Prediction of seizure outcome improved by fast ripples detected in low-noise intraoperative corticogram.

    PubMed

    Fedele, Tommaso; Ramantani, Georgia; Burnos, Sergey; Hilfiker, Peter; Curio, Gabriel; Grunwald, Thomas; Krayenbühl, Niklaus; Sarnthein, Johannes

    2017-07-01

    Fast ripples (FR, 250-500Hz) in the intraoperative corticogram have recently been proposed as specific predictors of surgical outcome in epilepsy patients. However, online FR detection is restricted by their low signal-to-noise ratio. Here we propose the integration of low-noise EEG with unsupervised FR detection. Pre- and post-resection ECoG (N=9 patients) was simultaneously recorded by a commercial device (CD) and by a custom-made low-noise amplifier (LNA). FR were analyzed by an automated detector previously validated on visual markings in a different dataset. Across all recordings, in the FR band the background noise was lower in LNA than in CD (p<0.001). FR rates were higher in LNA than CD recordings (0.9±1.4 vs 0.4±0.9, p<0.001). Comparison between FR rates in post-resection ECoG and surgery outcome resulted in positive predictive value PPV=100% in CD and LNA, and negative predictive value NPV=38% in CD and NPV=50% for LNA. Prediction accuracy was 44% for CD and 67% for LNA. Prediction of seizure outcome was improved by the optimal integration of low-noise EEG and unsupervised FR detection. Accurate, automated and fast FR rating is essential for consideration of FR in the intraoperative setting. Copyright © 2017. Published by Elsevier B.V.

  10. A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

    NASA Technical Reports Server (NTRS)

    Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

    1993-01-01

    A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

  11. Noise calculation model and analysis of high-gain readout circuits for CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Kawahito, Shoji; Itoh, Shinya

    2008-02-01

    A thermal noise calculation model of high-gain switched-capacitor column noise cancellers for CMOS image sensors is presented. In the high-gain noise canceller with a single noise cancelling stage, the reset noise of the readout circuits dominates the noise at high gain. Using the double-stage architecture using a switched-capacitor gain stage and a sample-and-hold stage using two sampling capacitors, the reset noise of the gain stage can be cancelled. The resulting input referred thermal noise power of high-gain double-stage switched-capacitor noise canceller is revealed to be proportional to (g_a/g_s)/GC_L where g_a, G and C_L are the transconductance, gain and output capacitance of the amplifier, respectively, and g_s is the output conductance of an in-pixel source follower. An important contribution of the proposed noise calculation formula is the inclusion of the influence of the transconductance ratio of the amplifier to that of the source follower. For low-noise design, it is important that the transconductance of the amplifier used in the noise canceller is minimized under the condition of meeting the required response time of the switched capacitor amplifier which is inversely proportional to the cutoff angular frequency.

  12. Low noise 4-channel front end ASIC with on-chip DLL for the upgrade of the LHCb Calorimeter

    NASA Astrophysics Data System (ADS)

    Picatoste, E.; Bigbeder-Beau, C.; Duarte, O.; Garrido, L.; Gascon, D.; Grauges, E.; Lefrançois, J.; Machefert, F.; Mauricio, J.; Vilasis, X.

    2015-04-01

    An integrated circuit for the Upgrade of the LHCb Calorimeter front end electronics is presented. It includes four analog channels, a Delay Locked Loop (DLL) for signal phase synchronization for all channels and an SPI communication protocol based interface. The analog circuit is based on two fully differential interleaved channels with a switched integrator to avoid dead time and it incorporates dedicated solutions to achieve low noise, linearity and spill-over specifications. The included DLL is capable of shifting the phase of the LHC clock (25 ns) in steps of 1 ns. The selected technology is AMS SiGe BiCMOS 0.35 um.

  13. Development of a low-noise readout ASIC for Silicon Drift Detectors in high energy resolution X-ray spectrometry

    NASA Astrophysics Data System (ADS)

    Atkin, E.; Levin, V.; Malankin, E.; Shumikhin, V.

    2017-03-01

    ASIC with a low-noise readout channel for Silicon Drift Detectors in high energy resolution X-ray spectrometry was designed and prototyped in the AMS 350 nm CMOS process via Europractice as a miniASIC. For the analog readout channel tests there was used the detector module SDD-10-130-PTW LTplus-ic (PNDetector GmbH). The measured energy resolution of this module with the designed readout channel: 200 eV (FWHM) at 55Fe, -16 °C, 1 kcps and a peaking time of 8 μs.

  14. 10 to 40 GHz Superheterodyne Receiver Frontend in 0.13 µm SiGe BiCMOS Technology

    NASA Astrophysics Data System (ADS)

    Abdeen, Hebat-Allah Yehia; Yuan, Shuai; Schumacher, Hermann; Ziegler, Volker; Meusling, Askold; Feldle, Peter

    2017-03-01

    A fully integrated 10-40 GHz superheterodyne receiver frontend using a 40-46 GHz IF is presented. The frontend consists of a differential low noise amplifier, a fully differential mixer, a single-ended frequency quadrupler and a transformer-based balun followed by an amplifier to convert the quadrupler's single-ended output to a differential signal to drive the LO port of the mixer. The circuit is designed and fabricated in a 250 GHz fT SiGe BiCMOS technology. The chip was characterized on-wafer single-endedly. The frontend achieves a differential conversion gain of 17-20 dB and an input-referred 1 dB compression point of -16 to -20 dBm across the desired IF bandwidth.

  15. Design of a LNA in the frequency band 1.8-2.2GHz in 0.13μm CMOS Technology

    NASA Astrophysics Data System (ADS)

    di Gioia, E.; Hermann, C.; Klar, H.

    2005-05-01

    The subject of this work is a low noise amplifier (LNA), operating in the frequency range 1.8-2.1GHz. The CMOS 0.13μm technology is used in respect to the low cost of the final device. Among the specifications, a variable gain and an adjustable working frequency are required. In particular, four different working modes are provided: 1.8, 1.9 and 2.1GHz high gain and 2.1GHz low gain. The amplifier is designed to be used as first stage of a receiver for mobile telephony. For this reason low power consumption is taken into consideration (low supply voltage and low drain currents). A simple digital circuit, integrated on-chip, is used to select the operating mode of the LNA by means of two input pins. A Noise figure of 1dB is obtained with a supply voltage of 0.8V.

  16. Design and Fabrication of Millimeter Wave Hexagonal Nano-Ferrite Circulator on Silicon CMOS Substrate

    NASA Astrophysics Data System (ADS)

    Oukacha, Hassan

    The rapid advancement of Complementary Metal Oxide Semiconductor (CMOS) technology has formed the backbone of the modern computing revolution enabling the development of computationally intensive electronic devices that are smaller, faster, less expensive, and consume less power. This well-established technology has transformed the mobile computing and communications industries by providing high levels of system integration on a single substrate, high reliability and low manufacturing cost. The driving force behind this computing revolution is the scaling of semiconductor devices to smaller geometries which has resulted in faster switching speeds and the promise of replacing traditional, bulky radio frequency (RF) components with miniaturized devices. Such devices play an important role in our society enabling ubiquitous computing and on-demand data access. This thesis presents the design and development of a magnetic circulator component in a standard 180 nm CMOS process. The design approach involves integration of nanoscale ferrite materials on a CMOS chip to avoid using bulky magnetic materials employed in conventional circulators. This device constitutes the next generation broadband millimeter-wave circulator integrated in CMOS using ferrite materials operating in the 60GHz frequency band. The unlicensed ultra-high frequency spectrum around 60GHz offers many benefits: very high immunity to interference, high security, and frequency re-use. Results of both simulations and measurements are presented in this thesis. The presented results show the benefits of this technique and the potential that it has in incorporating a complete system-on-chip (SoC) that includes low noise amplifier, power amplier, and antenna. This system-on-chip can be used in the same applications where the conventional circulator has been employed, including communication systems, radar systems, navigation and air traffic control, and military equipment. This set of applications of

  17. Low-noise cryogenically cooled broad-band microwave preamplifiers

    NASA Astrophysics Data System (ADS)

    Leskovar, B.

    1987-04-01

    The present noise performance, bandwidth capability and gain stability of low-noise cryogenically cooled broad-band preamplifiers are summarized and reviewed in the 150 MHz to 4 GHz frequency range. Stability factor of Gallium Arsenide Field-Effect transistors as a function of frequency and ambient temperature is presented and discussed. Also, other performance data, such as gain nonuniformity, phase shift as a function of frequency, and voltage standing-wave ratio, of several low-noise wide-band preamplifiers of interest for research instrumentation systems are presented.

  18. A programmable ultra-low noise X-band exciter.

    PubMed

    MacMullen, A; Hoover, L R; Justice, R D; Callahan, B S

    2001-07-01

    A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.

  19. Cross Linked Metal Particles for Low Noise Bolometer Materials

    DTIC Science & Technology

    2016-12-12

    CLMPs) for Low-noise Bolometer Materials " funded by the US Army Research Office under Contract # W911NF-15-1-0117. We have successfully carried out the...2016 Final Report: Cross-linked Metal Particles for Low-noise Bolometer Materials The views, opinions and/or findings contained in this report are... Materials Report Title This final report summarizes WSU’s progress from 4/2/2015 to 09/30/2016 on the project, "Cross-linked Metal Particles (CLMPs

  20. Experiments with synchronized sCMOS cameras

    NASA Astrophysics Data System (ADS)

    Steele, Iain A.; Jermak, Helen; Copperwheat, Chris M.; Smith, Robert J.; Poshyachinda, Saran; Soonthorntham, Boonrucksar

    2016-07-01

    Scientific-CMOS (sCMOS) cameras can combine low noise with high readout speeds and do not suffer the charge multiplication noise that effectively reduces the quantum efficiency of electron multiplying CCDs by a factor 2. As such they have strong potential in fast photometry and polarimetry instrumentation. In this paper we describe the results of laboratory experiments using a pair of commercial off the shelf sCMOS cameras based around a 4 transistor per pixel architecture. In particular using a both stable and a pulsed light sources we evaluate the timing precision that may be obtained when the cameras readouts are synchronized either in software or electronically. We find that software synchronization can introduce an error of 200-msec. With electronic synchronization any error is below the limit ( 50-msec) of our simple measurement technique.

  1. Enhanced performance CCD output amplifier

    DOEpatents

    Dunham, Mark E.; Morley, David W.

    1996-01-01

    A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.

  2. A low-noise 492 GHz SIS waveguide receiver

    NASA Technical Reports Server (NTRS)

    Walker, C. K.; Kooi, J. W.; Chan, M.; Leduc, Henry G.; Schaffer, P. L.; Carlstrom, J. E.; Phillips, T. G.

    1992-01-01

    We discuss the design and performance of an SIS waveguide receiver which provides low noise performance from 375 to 510 GHz. At its design frequency of 492 GHz, the receiver has a double sideband noise temperature of approx. 172 K. By using embedded magnetic field concentrators, we are able to effectively suppress Josephson pair tunneling. Techniques for improving receiver performance are discussed.

  3. Radiation Response of Emerging High Gain, Low Noise Detectors

    NASA Technical Reports Server (NTRS)

    Becker, Heidi N.; Farr, William H; Zhu, David Q.

    2007-01-01

    Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.

  4. Radiation Response of Emerging High Gain, Low Noise Detectors

    NASA Technical Reports Server (NTRS)

    Becker, Heidi N.; Farr, William H; Zhu, David Q.

    2007-01-01

    Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.

  5. A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver

    NASA Astrophysics Data System (ADS)

    Riyan, Wang; Jiwei, Huang; Zhengping, Li; Weifeng, Zhang; Longyue, Zeng

    2012-03-01

    A CMOS RF front-end for the long-term evolution (LTE) direct conversion receiver is presented. With a low noise transconductance amplifier (LNA), current commutating passive mixer and transimpedance operational amplifier (TIA), the RF front-end structure enables high-integration, high linearity and simple frequency planning for LTE multi-band applications. Large variable gain is achieved using current-steering transconductance stages. A current commutating passive mixer with 25% duty-cycle LO improves gain, noise and linearity. A direct coupled current-input filter (DCF) is employed to suppress the out-of-band interferer. Fabricated in a 0.13-μm CMOS process, the RF front-end achieves a 45 dB conversion voltage gain, 2.7 dB NF, -7 dBm IIP3, and +60 dBm IIP2 with calibration from 2.3 to 2.7 GHz. The total RF front end with divider draws 40 mA from a single 1.2-V supply.

  6. A 65 nm CMOS analog processor with zero dead time for future pixel detectors

    NASA Astrophysics Data System (ADS)

    Gaioni, L.; Braga, D.; Christian, D. C.; Deptuch, G.; Fahim, F.; Nodari, B.; Ratti, L.; Re, V.; Zimmerman, T.

    2017-02-01

    Next generation pixel chips at the High-Luminosity (HL) LHC will be exposed to extremely high levels of radiation and particle rates. In the so-called Phase II upgrade, ATLAS and CMS will need a completely new tracker detector, complying with the very demanding operating conditions and the delivered luminosity (up to 5×1034 cm-2 s-1 in the next decade). This work is concerned with the design of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier featuring a detector leakage compensation circuit, and a compact, single ended comparator that guarantees very good performance in terms of channel-to-channel dispersion of threshold without needing any pixel-level trimming. A flash ADC is exploited for digital conversion immediately after the charge amplifier. A thorough discussion on the design of the charge amplifier and the comparator is provided along with an exhaustive set of simulation results.

  7. 40 CFR 203.4 - Low-noise-emission product determination.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 24 2010-07-01 2010-07-01 false Low-noise-emission product... ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.4 Low-noise-emission product determination. (a) The..., determine whether such product is a low-noise-emission product. In doing so, he will determine if...

  8. 40 CFR 203.6 - Contracts for low-noise-emission products.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 24 2010-07-01 2010-07-01 false Contracts for low-noise-emission... ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.6 Contracts for low-noise-emission products. (a) Data relied upon by the Administrator in determining that a product is a certified low-noise-emission...

  9. A Radiation Hardened by Design CMOS ASIC for Thermopile Readouts

    NASA Technical Reports Server (NTRS)

    Quilligan, G.; Aslam, S.; DuMonthier, J.

    2012-01-01

    A radiation hardened by design (RHBD) mixed-signal application specific integrated circuit (ASIC) has been designed for a thermopile readout for operation in the harsh Jovian orbital environment. The multi-channel digitizer (MCD) ASIC includes 18 low noise amplifier channels which have tunable gain/filtering coefficients, a 16-bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The 18 channels, SDADC and controller were designed to operate with immunity to single event latchup (SEL) and to at least 10 Mrad total ionizing dose (TID). The ASIC also contains a radiation tolerant 16-bit 20 MHz Nyquist ADC for general purpose instrumentation digitizer needs. The ASIC is currently undergoing fabrication in a commercial 180 nm CMOS process. Although this ASIC was designed specifically for the harsh radiation environment of the NASA led JEO mission it is suitable for integration into instrumentation payloads 011 the ESA JUICE mission where the radiation hardness requirements are slightly less stringent.

  10. A saw-less direct conversion long term evolution receiver with 25% duty-cycle LO in 130 nm CMOS technology

    NASA Astrophysics Data System (ADS)

    Siyuan, He; Changhong, Zhang; Liang, Tao; Weifeng, Zhang; Longyue, Zeng; Wei, Lü; Haijun, Wu

    2013-03-01

    A CMOS long-term evolution (LTE) direct convert receiver that eliminates the interstage SAW filter is presented. The receiver consists of a low noise variable gain transconductance amplifier (TCA), a quadrature passive current commutating mixer with a 25% duty-cycle LO, a trans-impedance amplifier (TIA), a 7th-order Chebyshev filter and programmable gain amplifiers (PGAs). A wide dynamic gain range is allocated in the RF and analog parts. A current commutating passive mixer with a 25% duty-cycle LO improves gain, noise, and linearity. An LPF based on a Tow-Thomas biquad suppresses out-of-band interference. Fabricated in a 0.13 μm CMOS process, the receiver chain achieves a 107 dB maximum voltage gain, 2.7 dB DSB NF (from PAD port), -11 dBm IIP3, and > +65 dBm IIP2 after calibration, 96 dB dynamic control range with 1 dB steps, less than 2% error vector magnitude (EVM) from 2.3 to 2.7 GHz. The total receiver (total I Q path) draws 89 mA from a 1.2-V LDO on chip supply.

  11. A 3.1-4.8 GHz CMOS receiver for MB-OFDM UWB

    NASA Astrophysics Data System (ADS)

    Guang, Yang; Wang, Yao; Jiangwei, Yin; Renliang, Zheng; Wei, Li; Ning, Li; Junyan, Ren

    2009-01-01

    An integrated fully differential ultra-wideband CMOS receiver for 3.1-4.8 GHz MB-OFDM systems is presented. A gain controllable low noise amplifier and a merged quadrature mixer are integrated as the RF front-end. Five order Gm-C type low pass filters and VGAs are also integrated for both I and Q IF paths in the receiver. The ESD protected chip is fabricated in a Jazz 0.18 μm RF CMOS process and achieves a maximum total voltage gain of 65 dB, an AGC range of 45 dB with about 6 dB/step, an averaged total noise figure of 6.4 to 8.8 dB over 3 bands and an in-band IIP3 of -5.1 dBm. The receiver occupies 2.3 mm2 and consumes 110 mA from a 1.8 V supply including test buffers and a digital module.

  12. A Differential CMOS Common-Gate LNA Linearized by Cross-Coupled Post Distortion Technique

    NASA Astrophysics Data System (ADS)

    Guo, Benqing; Yang, Guomin; Bin, Xiexian

    2014-05-01

    A linearized differential common-gate CMOS low noise amplifier is proposed. The linearity is improved by a cross-coupled post distortion technique, employing auxiliary PMOS transistors in weak inversion region to cancel the third-order nonlinear currents of common-gate LNA and impair the second-order nonlinear currents of that. The negative conductance characteristic of cross-coupled auxiliary PMOS transistors improves the gain while the resulted NF is little affected. Furthermore, noise contribution and linearity deterioration from the cascode stage is eliminated by an inductor resonating with the parasitic capacitance observed at the source net of the cascode transistor. The LNA implemented in a 0.18 μm CMOS technology demonstrates that IIP3 and gain have about 8.2 dB and 1.4 dB improvements in the designed frequency band, respectively. The noise figure of 3.4 dB is obtained with a power dissipation of 6.8 mW under a 1.8 V power supply.

  13. Low Noise Performance Perspectives Of Wideband Aperture Phased Arrays

    NASA Astrophysics Data System (ADS)

    Woestenburg, E. E. M.; Kuenen, J. C.

    2004-06-01

    A general analysis of phased array noise properties and measurements, applied to one square meter tiles of the Thousand Element Array (THEA), has resulted in a procedure to define the noise budget for a THEA-tile (Woestenburg and Dijkstra, 2003). The THEA system temperature includes LNA and receiver noise, antenna connecting loss, noise coupling between antenna elements and other possible contributions. This paper discusses the various noise contributions to the THEA system temperature and identifies the areas where improvement can be realized. We will present better understanding of the individual noise contributions using measurements and analysis of single antenna/receiver elements. An improved design for a 1-m2 Low Noise Tile (LNT) will be discussed and optimized low noise performance for the LNT is presented. We will also give future perspectives of the noise performance for such tiles, in relation to the requirements for SKA in the 1 GHz frequency range.

  14. Design and Testing of a Low Noise Flight Guidance Concept

    NASA Technical Reports Server (NTRS)

    Williams, David H.; Oseguera-Lohr, Rosa M.; Lewis, Elliot T.

    2004-01-01

    A flight guidance concept was developed to assist in flying continuous descent approach (CDA) procedures designed to lower the noise under the flight path of jet transport aircraft during arrival operations at an airport. The guidance consists of a trajectory prediction algorithm that was tuned to produce a high-efficiency, low noise flight profile with accompanying autopilot and flight display elements needed by the flight control system and pilot to fly the approach. A key component of the flight guidance was a real-time display of energy error relative to the predicted flight path. The guidance was integrated with the conventional Flight Management System (FMS) guidance of a modern jet transport airplane and tested in a high fidelity flight simulation. A charted arrival procedure, which allowed flying conventional arrivals, CDA arrivals with standard guidance, and CDA arrivals with the new low noise guidance, was developed to assist in the testing and evaluation of the low noise guidance concept. Results of the simulation testing showed the low noise guidance was easy to use by airline pilot test subjects and effective in achieving the desired noise reduction. Noise under the flight path was reduced by at least 2 decibels in Sound Exposure Level (SEL) at distances from about 3 nautical miles out to about 17.5 nautical miles from the runway, with a peak reduction of 8.5 decibels at about 10.5 nautical miles. Fuel consumption was also reduced by about 17% for the LNG conditions compared to baseline runs for the same flight distance. Pilot acceptance and understanding of the guidance was quite high with favorable comments and ratings received from all test subjects.

  15. Low-noise preamplifier for multistage photorefractive image amplification

    NASA Astrophysics Data System (ADS)

    Breugnot, S.; Rajbenbach, H.; Defour, M.; Huignard, J.-P.

    1995-07-01

    We present a two-beam coupling configuration in photorefractive BaTiO3 that provides a low-noise amplification of the signal to be detected. A two-wave mixing gain of 100 is reached, in conjunction with very low beam fanning background in the signal direction. The extensions of this configuration to photorefractive heterodyne detection and to multistage image amplification are theoretically and experimentally studied.

  16. 52 W kHz-linewidth low-noise linearly-polarized all-fiber single-frequency MOPA laser

    NASA Astrophysics Data System (ADS)

    Yang, Changsheng; Xu, Shanhui; Chen, Dan; Zhang, Yuanfei; Zhao, Qilai; Li, Can; Zhou, Kaijun; Feng, Zhouming; Gan, Jiulin; Yang, Zhongmin

    2016-05-01

    An all-fiber Yb-doped kHz-linewidth low-noise linearly polarized single-frequency master-oscillator power-amplifier (MOPA) laser with a stable CW output power of >52 W is demonstrated. By suppressing the intensity noise of the DBR phosphate fiber oscillator, the linewidth of MOPA laser is not noticeably broadened, and an ultra-narrow linewidth of <3 kHz is obtained. Furthermore, the low-noise behavior of MOPA lasers is investigated. A measured relative intensity noise of < -130 dB Hz-1 at frequencies of over 2 MHz, a phase noise above 1 kHz of <5 μrad/Hz1/2, and a signal-to-noise ratio of >63 dB are achieved.

  17. Low noise, 0.4-3 GHz cryogenic receiver for radio astronomy

    NASA Astrophysics Data System (ADS)

    Gawande, R.; Bradley, R.; Langston, G.

    2014-10-01

    We present the design and measurement of a radio telescope receiver front end cooled to 100 K physical temperature, and working over 400 MHz to 3 GHz frequency band. The system uses a frequency independent feed developed for operation as a feed for parabola using sinuous elements and integrated with an ultra-wideband low noise amplifier. The ambient temperature system is tested on the 43 m radio telescope in Green Bank, WV and the system verification results on the sky are presented. The cryogenic receiver is developed using a Stirling cycle, one stage cryocooler. The measured far field patterns and the system noise less than 80 K over a 5:1 bandwidth are presented.

  18. Low noise, 0.4-3 GHz cryogenic receiver for radio astronomy.

    PubMed

    Gawande, R; Bradley, R; Langston, G

    2014-10-01

    We present the design and measurement of a radio telescope receiver front end cooled to 100 K physical temperature, and working over 400 MHz to 3 GHz frequency band. The system uses a frequency independent feed developed for operation as a feed for parabola using sinuous elements and integrated with an ultra-wideband low noise amplifier. The ambient temperature system is tested on the 43 m radio telescope in Green Bank, WV and the system verification results on the sky are presented. The cryogenic receiver is developed using a Stirling cycle, one stage cryocooler. The measured far field patterns and the system noise less than 80 K over a 5:1 bandwidth are presented.

  19. On-wafer, cryogenic characterization of ultra-low noise HEMT devices

    NASA Technical Reports Server (NTRS)

    Bautista, J. J.; Laskar, J.; Szydlik, P.

    1995-01-01

    Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

  20. A low power low noise analog front end for portable healthcare system

    NASA Astrophysics Data System (ADS)

    Yanchao, Wang; Keren, Ke; Wenhui, Qin; Yajie, Qin; Ting, Yi; Zhiliang, Hong

    2015-10-01

    The presented analog front end (AFE) used to process human bio-signals consists of chopping instrument amplifier (IA), chopping spikes filter and programmable gain and bandwidth amplifier. The capacitor-coupling input of AFE can reject the DC electrode offset. The power consumption of current-feedback based IA is reduced by adopting capacitor divider in the input and feedback network. Besides, IA's input thermal noise is decreased by utilizing complementary CMOS input pairs which can offer higher transconductance. Fabricated in Global Foundry 0.35 μm CMOS technology, the chip consumes 3.96 μA from 3.3 V supply. The measured input noise is 0.85 μVrms (0.5-100 Hz) and the achieved noise efficient factor is 6.48. Project supported by the Science and Technology Commission of Shanghai Municipality (No. 13511501100), the State Key Laboratory Project of China (No. 11MS002), and the State Key Laboratory of ASIC & System, Fudan University.

  1. CMOS sensor for face tracking and recognition

    NASA Astrophysics Data System (ADS)

    Ginhac, Dominique; Prasetyo, Eri; Paindavoine, Michel

    2005-03-01

    This paper describes the main principles of a vision sensor dedicated to the detecting and tracking faces in video sequences. For this purpose, a current mode CMOS active sensor has been designed using an array of pixels that are amplified by using current mirrors of column amplifier. This circuit is simulated using Mentor Graphics software with parameters of a 0.6 μm CMOS process. The circuit design is added with a sequential control unit which purpose is to realise capture of subwindows at any location and any size in the whole image.

  2. Fully integrated low-noise readout circuit with automatic offset cancellation loop for capacitive microsensors.

    PubMed

    Song, Haryong; Park, Yunjong; Kim, Hyungseup; Cho, Dong-Il Dan; Ko, Hyoungho

    2015-10-14

    Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR) logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with an active area of 1.76 mm². The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of -250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms.

  3. A low-noise widely tunable Gm-C filter with frequency calibration

    NASA Astrophysics Data System (ADS)

    Yu, Wang; Jing, Liu; Na, Yan; Hao, Min

    2016-09-01

    A fourth-order Gm-C Chebyshev low-pass filter is presented as channel selection filter for reconfigurable multi-mode wireless receivers. Low-noise technologies are proposed in optimizing the noise characteristics of both the Gm cells and the filter topology. A frequency tuning strategy is used by tuning both the transconductance of the Gm cells and the capacitance of the capacitor banks. To achieve accurate cut-off frequencies, an on-chip calibration circuit is presented to compensate for the frequency inaccuracy introduced by process variation. The filter is fabricated in a 0.13 μm CMOS process. It exhibits a wide programmable bandwidth from 322.5 kHz to 20 MHz. Measured results show that the filter has low input referred noise of 5.9 \\text{nV}/\\sqrt {\\text{Hz}} and high out-of-band IIP3 of 16.2 dBm. It consumes 4.2 and 9.5 mW from a 1 V power supply at its lowest and highest cut-off frequencies respectively. Project supported by the National Natural Science Foundation of China (No. 61574045).

  4. A low noise interface circuit design of micro-machined gyroscope

    NASA Astrophysics Data System (ADS)

    Fu, Qiang; Di, Xipeng; Yin, Liang; Liu, Xiaowei

    2017-07-01

    The analyses of MEMS gyroscope interface circuit on thermal noise, 1/f noise and phase noise are made in this paper. A closed-loop differential driving circuit and a low-noise differential detecting circuit based on the high frequency modulation are designed to limit the noise. The interface chip is implemented in a standard 0.5 μm CMOS process. The test results show that the resolution of sensitive capacity can reach to 6.47 × 10-20 F at the bandwidth of 60 Hz. The measuring range is ± 200°/s and the nonlinearity is 310 ppm. The output noise density is 5.8^\\circ/({{h}}\\cdot \\sqrt{{Hz}}). The angular random walk (allen-variance) is 0.092^\\circ/\\sqrt{{{h}}} and the bias instability is 2.63°/h. Project supported by the National Natural Science Foundation of China (No. 61204121), the National Hi-Tech Research and Development Program of China (No. 2013AA041107), and the Fundamental Research Funds for the Central Universities (No. HIT.NSRIF.2013040).

  5. Fully Integrated Low-Noise Readout Circuit with Automatic Offset Cancellation Loop for Capacitive Microsensors

    PubMed Central

    Song, Haryong; Park, Yunjong; Kim, Hyungseup; Cho, Dong-il Dan; Ko, Hyoungho

    2015-01-01

    Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR) logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with an active area of 1.76 mm2. The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of −250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms. PMID:26473877

  6. Ultra Low Noise Infrared Detector Amplifier for Next Generation Standoff Detector

    DTIC Science & Technology

    2016-02-18

    than -10 dB. The measured noise figure at room temperature is 1.1 dB at 700 MHz and 1.2 dB at 1.5 GHz. The measured P1dB and Psat at room temperature...are about 7 dBm and 10 dBm, respectively. At room temperature, the LNA draws 37 mA at 3 V voltage. We further characterized the LNA at cryogenic...Description (e): Sub Contract Award Date (f-1): Sub Contract Est Completion Date(f-2): 1 b.Illinois Institute of Technology Room 301, Main Building 3300 South

  7. Microwave Characterization of the GaAs MESFET and Development of a Low Noise Microwave Amplifier.

    DTIC Science & Technology

    1979-12-01

    CALCATERA ALAN R. MERTZ, Capt,.USAF Project Engineer Chief, Microwave Tech & Appl Gp Microwave Technology Branch FOR THE COXNANDER DONALD S. REES...given by Pucel (IEEE Trans ED). The element values ore entered into data lines 10 thru 24 as follows: Ls,LgLd,Rg ,Rd,Rc ,lto, f,rCdg,Cgc ,Co, gmo 10

  8. Fabrication and characterization of ultra-low noise narrow and wide band Josephson parametric amplifiers

    NASA Astrophysics Data System (ADS)

    Huang, Keqiang; Guo, Qiujiang; Song, Chao; Zheng, Yarui; Deng, Hui; Wu, Yulin; Jin, Yirong; Zhu, Xiaobo; Zheng, Dongning

    2017-08-01

    Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 91321208, 11374344, 11404386, 11574380, and 11674376), the Ministry of Science and Technology of China (Grant Nos. 2014CB921401 and 2016YFA0300601), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07010300).

  9. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  10. Graphene/Si CMOS hybrid hall integrated circuits.

    PubMed

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-07

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  11. Reliability Investigation of Low Noise GaAs FETs.

    DTIC Science & Technology

    1981-07-01

    a) Overall view, 162X. Device has no glass as received. (b) Gate connector, showing very deep recess. 29 2-18 FET P-4. (a) End of channel, 4200X. (b...depth of channel etching is perhaps nearly twice the thickness of the gate metallization, which is very deep for a low noise device. Scans of the...as received. (b) Gate connector, showing very deep recess. Note beveled mesa edge. 29 E2764 () Figure 2-18 FET P-4. (a) End of channel, 4200X. Note

  12. Low Noise 1.2 THz SIS Receiver

    NASA Technical Reports Server (NTRS)

    Karpov, A.; Miller, D.; Rice, F.; Zmuidzinas, J.; Stern, J. A.; Bumble, B.; LeDuc, H. G.

    2001-01-01

    We present the development of a low noise superconductor insulator superconductor (SIS) mixer for the 1.1 - 1.25 THz heterodyne receiver of FIRST space radiotelescope. The quasi-optical SIS mixer has two NbTiN/AlN/Nb junctions with critical current density 30 kA/sq cm. The individual junction area is close to 0.65 square micrometers. The SIS junctions are coupled to the optical input beam through a planar double slot antenna and a Si hyperhemispherical lens. The minimum DSB receiver noise temperature is 650 K, about 12 hv/k.

  13. Hybrid EDFA/Raman Amplifiers

    NASA Astrophysics Data System (ADS)

    Masuda, Hiroji

    This chapter describes the technologies needed for cascading an erbium-doped fiber amplifier (EDFA) and a fiber Raman amplifier (FRA or RA) to create a hybrid amplifier (HA), the EDFA/Raman HA. Two kinds of HA are defined in this chapter: the narrowband HA (NB-HA) and the seamless and wideband HA (SWB-HA). The NB-HA employs distributed Raman amplification in the transmission fiber together with an EDFA and provides low noise transmission in the C- or L-band. The noise figure of the transmission line is lower than it would be if only an EDFA were used. The SWB-HA, on the other hand, employs distributed or discrete Raman amplification together with an EDFA, and provides a low-noise and wideband transmission line or a low-noise and wideband discrete amplifier for the C- and L-bands. The typical gain bandwidth (Δλ) of the NB-HA is ~30 to 40 nm, whereas that of the SWB-HA is ~70 to 80 nm.

  14. A Low-Power Low-Noise Clock Signal Generator for Next-Generation Mobile Wireless Terminals

    NASA Astrophysics Data System (ADS)

    Sai, Akihide; Kurose, Daisuke; Yamaji, Takafumi; Itakura, Tetsuro

    Sampling clock jitter degrades the dynamic range of an analog-to-digital converter (ADC). In this letter, a low-power low-noise clock signal generator for ADCs is described. As a clock signal generator, a ring-VCO-based charge pump PLL is used to reduce power dissipation within a given jitter specification. The clock signal generator is fabricated on a CMOS chip with 200-MSPS 10-bit ADC. The measured results show that the ADC keeps a 60-MHz input bandwidth and 53-dB dynamic range and a next-generation mobile wireless terminal can be realized with the ADCs and the on-chip low-power clock generator.

  15. 40 CFR 203.4 - Low-noise-emission product determination.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 25 2011-07-01 2011-07-01 false Low-noise-emission product determination. 203.4 Section 203.4 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) NOISE ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.4 Low-noise-emission product determination. (a) The...

  16. 40 CFR 203.6 - Contracts for low-noise-emission products.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 26 2013-07-01 2013-07-01 false Contracts for low-noise-emission products. 203.6 Section 203.6 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) NOISE ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.6 Contracts for low-noise-emission products. (a) Data...

  17. 40 CFR 203.4 - Low-noise-emission product determination.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 25 2014-07-01 2014-07-01 false Low-noise-emission product determination. 203.4 Section 203.4 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) NOISE ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.4 Low-noise-emission product determination. (a) The...

  18. 40 CFR 203.6 - Contracts for low-noise-emission products.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 25 2014-07-01 2014-07-01 false Contracts for low-noise-emission products. 203.6 Section 203.6 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) NOISE ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.6 Contracts for low-noise-emission products. (a) Data...

  19. 40 CFR 203.4 - Low-noise-emission product determination.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 26 2012-07-01 2011-07-01 true Low-noise-emission product determination. 203.4 Section 203.4 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) NOISE ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.4 Low-noise-emission product determination. (a) The...

  20. 40 CFR 203.6 - Contracts for low-noise-emission products.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 26 2012-07-01 2011-07-01 true Contracts for low-noise-emission products. 203.6 Section 203.6 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) NOISE ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.6 Contracts for low-noise-emission products. (a) Data...

  1. 40 CFR 203.4 - Low-noise-emission product determination.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 26 2013-07-01 2013-07-01 false Low-noise-emission product determination. 203.4 Section 203.4 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) NOISE ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.4 Low-noise-emission product determination. (a) The...

  2. 40 CFR 203.6 - Contracts for low-noise-emission products.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 25 2011-07-01 2011-07-01 false Contracts for low-noise-emission products. 203.6 Section 203.6 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) NOISE ABATEMENT PROGRAMS LOW-NOISE-EMISSION PRODUCTS § 203.6 Contracts for low-noise-emission products. (a) Data...

  3. Design and Evaluation of a Low-Noise Helicopter Blade

    NASA Astrophysics Data System (ADS)

    Kondo, Natsuki; Tsujiuchi, Tomoka; Murashige, Atsushi; Nishimura, Hiroki; Aoki, Makoto; Tsuchihashi, Akihiko; Yamakawa, Eiichi; Aoyama, Takashi; Saito, Shigeru

    A low-noise helicopter blade, AT1, was designed with the concept of reducing noise without the drop of rotor performance. In the concept, High-Speed Impulsive (HSI) noise is reduced by applying a thin airfoil in the tip region and a dog-tooth like extension in the leading-edge of the tip region. Blade-Vortex Interaction (BVI) noise is reduced by applying the extension and a strong taper near the tip end. The stall angle of the blade is increased by the effect of the vortex generated from the leading-edge extension. As a result, the drop of rotor performance caused by the thin airfoil and the reduction of rotor rotational speed is recovered. The low-noise characteristics and the performance of AT1 were evaluated by a model rotor test conducted at Deutsch Niederländischer Windkanal (DNW). It is shown that AT1 reduces HSI noise and BVI noise and has good performance in forward flight conditions. However, the improvement of performance in high-lift conditions still remains as a future problem.

  4. Intraoperative subdural low-noise EEG recording of the high frequency oscillation in the somatosensory evoked potential.

    PubMed

    Fedele, Tommaso; Schönenberger, Claudio; Curio, Gabriel; Serra, Carlo; Krayenbühl, Niklaus; Sarnthein, Johannes

    2017-10-01

    The detectability of high frequency oscillations (HFO, >200Hz) in the intraoperative ECoG is restricted by their low signal-to-noise ratio (SNR). Using the somatosensory evoked HFO, we quantify how HFO detectability can benefit from a custom-made low-noise amplifier (LNA). In 9 patients undergoing tumor surgery in the central region, subdural strip electrodes were placed for intraoperative neurophysiological monitoring. We recorded the somatosensory evoked potential (SEP) simultaneously by custom-made LNA and by a commercial device (CD). We varied the stimulation rate between 1.3 and 12.7Hz to tune the SNR of the N20 component and the evoked HFO and quantified HFO detectability at the single trial level. In three patients we compared Propofol® and Sevoflurane® anesthesia. In the average, amplitude decreased in both in N20 and evoked HFO amplitude with increasing stimulation rate (p<0.05). We detected a higher percentage of single trial evoked HFO with the LNA (p<0.001) for recordings with low impedance (<5kΩ). Average amplitudes were indistinguishable between anesthesia compounds. Low-noise amplification improves the detection of the evoked HFO in recordings with subdural electrodes with low impedance. Low-noise EEG might critically improve the detectability of interictal spontaneous HFO in subdural and possibly in scalp recordings. Copyright © 2017 International Federation of Clinical Neurophysiology. Published by Elsevier B.V. All rights reserved.

  5. Characteristics of a multichannel low-noise front-end ASIC for CZT-based small animal PET imaging

    NASA Astrophysics Data System (ADS)

    Gao, W.; Liu, H.; Gan, B.; Hu, Y.

    2014-05-01

    In this paper, we present the design and characteristics of a novel low-noise front-end readout application-specific integrated circuit dedicated to CdZnTe (CZT) detectors for a small animal PET imaging system. A low-noise readout method based on the charge integration and the delayed peak detection is proposed. An eight-channel front-end readout prototype chip is designed and implemented in a 0.35 μm CMOS process. The die size is 2.3 mm ×2.3 mm. The prototype chip is tested in different methods including electronic test, energy spectrum test and irradiation test. The input range of the ASIC is from 2000e- to 180,000e-, reflecting the energy of the gamma ray from 11.2 keV to 1 MeV. The gain of the readout channel is 65 mV/fC at the shaping time of 1 μs. The best test result of the equivalent noise charge (ENC) is 58.9 e- at zero farad plus 5.4 e- per picofarad. The nonlinearity and the crosstalk are less than 3% and less than 2%, respectively, at the room temperature. The static power dissipation is about 3 mW/channel.

  6. A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing

    NASA Astrophysics Data System (ADS)

    De Matteis, M.; De Blasi, M.; Vallicelli, E. A.; Zannoni, M.; Gervasi, M.; Bau, A.; Passerini, A.; Baschirotto, A.

    2017-02-01

    This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μ m technology (12 mm2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

  7. A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing.

    PubMed

    De Matteis, M; De Blasi, M; Vallicelli, E A; Zannoni, M; Gervasi, M; Bau, A; Passerini, A; Baschirotto, A

    2017-02-01

    This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μm technology (12 mm(2) area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

  8. Recent progress and development of a speedster-EXD: a new event-triggered hybrid CMOS x-ray detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher V.; Falcone, Abraham D.; Prieskorn, Zachary R.; Burrows, David N.

    2015-08-01

    We present the characterization of a new event-driven X-ray hybrid CMOS detector developed by Penn State University in collaboration with Teledyne Imaging Sensors. Along with its low susceptibility to radiation damage, low power consumption, and fast readout time to avoid pile-up, the Speedster-EXD has been designed with the capability to limit its readout to only those pixels containing charge, thus enabling even faster effective frame rates. The threshold for the comparator in each pixel can be set by the user so that only pixels with signal above the set threshold are read out. The Speedster-EXD hybrid CMOS detector also has two new in-pixel features that reduce noise from known noise sources: (1) a low-noise, high-gain CTIA amplifier to eliminate crosstalk from interpixel capacitance (IPC) and (2) in-pixel CDS subtraction to reduce kTC noise. We present the read noise, dark current, IPC, energy resolution, and gain variation measurements of one Speedster-EXD detector.

  9. Low noise patch-clamp current amplification by nanoparticles plasmonic-photonic coupling (analysis and modelling).

    PubMed

    Haberal, E O; SalmanOgli, A; Nasseri, B

    2016-10-01

    In this article, a patch-clamp low noise current amplification based on nanoparticles plasmonic radiation is analyzed. It is well-known, a very small current is flowing from different membrane channels and so, for extra processing the current amplification is necessary. It is notable that there are some problems in traditional electronic amplifier due to its noise and bandwidth problem. Because of the important role of the patch-clamp current in cancer research and especially its small amplitude, it is vital to intensify it without adding any noises. In this study, the current amplification is performed firstly: from the excitement of nanoparticles by the patch-clamp pico-ampere current and then, the effect of nanoparticles plasmonic far-field radiation on conductor's carriers, which will cause the current amplification. This relates to the plasmonic-photonic coupling and their effect on conductor carriers as the current perturbation agent. In the steady state, the current amplification can reach to 1000 times of initial level. Furthermore, we investigated the nanoparticles morphology changing effect such as size, nanoparticles inter-distance, and nanoparticles distance from the conductor on the amplifier parameters. Finally, it should note that the original aim is to use nanoparticles plasmonic engineering and their coupling to photonics for output current manipulating.

  10. A very low noise preamplifier for extremely low frequency magnetic antenna

    NASA Astrophysics Data System (ADS)

    Shimin, Feng; Suihua, Zhou; Zhiyi, Chen

    2013-07-01

    Besides the electrode-pair antenna, the magnetic antenna is also used for the extremely low frequency (ELF) submarine communication. To receive the weak ELF signals, the structure of a small sized magnetic antenna determines its specific electrical characteristics. The ELF magnetic antenna shows high internal resistance, alternating-current impedance, and a resonance frequency near the operating bandwidth. In accordance with the electrical characteristics of ELF magnetic antenna, a low noise preamplifier and frequency compensation circuit were designed and realized. The preamplifier is a three-stage negative feedback circuit, which is composed of parallel JFET, common-emitter amplifier with a Darlington structure and a common-collector amplifier in push-pull connection. And a frequency compensation circuit is cascaded to compensate the characteristic in low frequency range. In the operating bandwidth f = 30-200 Hz, the circuit has a gain of 39.4 dB. The equivalent input noise is 1.97 nV/√Hz and the frequency response keeps flat in operating bandwidth. The proposed preamplifier of the ELF magnetic antenna performs well in receiving ELF signals.

  11. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, James H.; Lavietes, Anthony D.

    1998-05-29

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radio nuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components.

  12. Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

    DOEpatents

    McQuaid, J.H.; Lavietes, A.D.

    1998-05-26

    A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs.

  13. Fundamental study on identification of CMOS cameras

    NASA Astrophysics Data System (ADS)

    Kurosawa, Kenji; Saitoh, Naoki

    2003-08-01

    In this study, we discussed individual camera identification of CMOS cameras, because CMOS (complementary-metal-oxide-semiconductor) imaging detectors have begun to make their move into the CCD (charge-coupled-device) fields for recent years. It can be identified whether or not the given images have been taken with the given CMOS camera by detecting the imager's intrinsic unique fixed pattern noise (FPN) just like the individual CCD camera identification method proposed by the authors. Both dark and bright pictures taken with the CMOS cameras can be identified by the method, because not only dark current in the photo detectors but also MOS-FET amplifiers incorporated in each pixel may produce pixel-to-pixel nonuniformity in sensitivity. Each pixel in CMOS detectors has the amplifier, which degrades image quality of bright images due to the nonuniformity of the amplifier gain. Two CMOS cameras were evaluated in our experiments. They were WebCamGoPlus (Creative), and EOS D30 (Canon). WebCamGoPlus is a low-priced web camera, whereas EOS D30 is for professional use. Image of a white plate were recorded with the cameras under the plate's luminance condition of 0cd/m2 and 150cd/m2. The recorded images were multiply integrated to reduce the random noise component. From the images of both cameras, characteristic dots patterns were observed. Some bright dots were observed in the dark images, whereas some dark dots were in the bright images. The results show that the camera identification method is also effective for CMOS cameras.

  14. XV-15 Low-Noise Terminal Area Operations Testing

    NASA Technical Reports Server (NTRS)

    Edwards, B. D.

    1998-01-01

    Test procedures related to XV-15 noise tests conducted by NASA-Langley and Bell Helicopter Textron, Inc. are discussed. The tests. which took place during October and November 1995, near Waxahachie, Texas, documented the noise signature of the XV-15 tilt-rotor aircraft at a wide variety of flight conditions. The stated objectives were to: -provide a comprehensive acoustic database for NASA and U.S. Industry -validate noise prediction methodologies, and -develop and demonstrate low-noise flight profiles. The test consisted of two distinct phases. Phase 1 provided an acoustic database for validating analytical noise prediction techniques; Phase 2 directly measured noise contour information at a broad range of operating profiles, with emphasis on minimizing 'approach' noise. This report is limited to a documentation of the test procedures, flight conditions, microphone locations, meteorological conditions, and test personnel used in the test. The acoustic results are not included.

  15. Ultra-Low-Noise W-Band MMIC Detector Modules

    NASA Technical Reports Server (NTRS)

    Gaier, Todd C.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Van Vinkle, Dan; Tantawi, Sami; Fox, John; Church, Sarah E.; Lau, Jusy M.; Sieth, Matthew M.; Voll, Patricia E.; hide

    2010-01-01

    A monolithic microwave integrated circuit (MMIC) receiver can be used as a building block for next-generation radio astronomy instruments that are scalable to hundreds or thousands of pixels. W-band (75-110 GHz) low-noise receivers are needed for radio astronomy interferometers and spectrometers, and can be used in missile radar and security imagers. These receivers need to be designed to be mass-producible to increase the sensitivity of the instrument. This innovation is a prototyped single-sideband MMIC receiver that has all the receiver front-end functionality in one small and planar module. The planar module is easy to assemble in volume and does not require tuning of individual receivers. This makes this design low-cost in large volumes.

  16. A Low noise, Non-contact Capacitive Cardiac Sensor*

    PubMed Central

    Peng, GuoChen; Bocko, Mark F.

    2014-01-01

    The development of sensitive, non-contact electric field sensors to measure weak bioelectric signals will be useful for the development of a number of unobtrusive health sensors. In this paper we summarize our recent work on a number of specific challenges in the development of non-contact ECG sensors. First, we considered the design of a low noise sensor preamplifier. We have adapted circuit designs that incorporate a double feedback loop to cancel the input transistor leakage current while providing stable operation, fast settling time and good low frequency response without the need for ultrahigh value resistors. The measured input referred noise of the preamplifier in the frequency band 0.05–100 Hz is 0.76 μVrms, which is several times lower than existing ECG preamplifiers. PMID:23367049

  17. Advanced Low-Noise Research Fan Stage Design

    NASA Technical Reports Server (NTRS)

    Neubert, Robert; Bock, Larry; Malmborg, Eric; Owen-Peer, William

    1997-01-01

    This report describes the design of the Advanced Low-Noise Research Fan stage. The fan is a variable pitch design, which is designed at the cruise pitch condition. Relative to the cruise setting, the blade is closed at takeoff and opened for reverse thrust operation. The fan stage is a split flow design with fan exit guide vanes (FEGVs) and core stators. The fan stage design is combined with a nacelle and engine core duct to form a powered fan/nacelle subscale model. This model is intended for use in combined aerodynamic, acoustic, and structural testing in a wind tunnel. The fan has an outer diameter of 22 in. and a hub-to-tip of 0.426 in., which allows the use of existing NASA fan and cowl force balance and rig drive systems. The design parameters were selected to permit valid acoustic and aerodynamic comparisons with the Pratt & Whitney (P&W) 17- and 22-in. rigs previously tested under NASA contract. The fan stage design is described in detail. The results of the design axisymmetric and Navier-Stokes aerodynamic analysis are presented at the critical design conditions. The structural analysis of the fan rotor and attachment is included. The blade and attachment are predicted to have adequate low-cycle fatigue life and an acceptable operating range without resonant stress or flutter. The stage was acoustically designed with airfoil counts in the FEGV and core stator to minimize noise. A fan/FEGV tone analysis developed separately under NASA contract was used to determine the optimum airfoil counts. The fan stage was matched to the existing nacelle, designed under the previous P&W low-noise contract, to form a fan/nacelle model for wind tunnel testing. It is an axisymmetric nacelle for convenience in testing and analysis. Previous testing confirmed that the nacelle performed as required at various aircraft operating conditions.

  18. Ultra-low noise optical phase-locked loop

    NASA Astrophysics Data System (ADS)

    Ayotte, Simon; Babin, André; Costin, François

    2014-03-01

    The relative phase between two fiber lasers is controlled via a high performance optical phase-locked loop (OPLL). Two parameters are of particular importance for the design: the intrinsic phase noise of the laser (i.e. its linewidth) and a high-gain, low-noise electronic locking loop. In this work, one of the lowest phase noise fiber lasers commercially available was selected (i.e. NP Photonics Rock fiber laser module), with sub-kHz linewidth at 1550.12 nm. However, the fast tuning mechanism of such lasers is through stretching its cavity length with a piezoelectric transducer which has a few 10s kHz bandwidth. To further increase the locking loop bandwidth to several MHz, a second tuning mechanism is used by adding a Lithium Niobate phase modulator in the laser signal path. The OPLL is thus divided into two locking loops, a slow loop acting on the laser piezoelectric transducer and a fast loop acting on the phase modulator. The beat signal between the two phase-locked lasers yields a highly pure sine wave with an integrated phase error of 0.0012 rad. This is orders of magnitude lower than similar existing systems such as the Laser Synthesizer used for distribution of photonic local oscillator (LO) for the Atacama Large Millimeter Array radio telescope in Chile. Other applications for ultra-low noise OPLL include coherent power combining, Brillouin sensing, light detection and ranging (LIDAR), fiber optic gyroscopes, phased array antenna and beam steering, generation of LOs for next generation coherent communication systems, coherent analog optical links, terahertz generation and coherent spectroscopy.

  19. Ultra-low noise mechanically cooled germanium detector

    NASA Astrophysics Data System (ADS)

    Barton, P.; Amman, M.; Martin, R.; Vetter, K.

    2016-03-01

    Low capacitance, large volume, high purity germanium (HPGe) radiation detectors have been successfully employed in low-background physics experiments. However, some physical processes may not be detectable with existing detectors whose energy thresholds are limited by electronic noise. In this paper, methods are presented which can lower the electronic noise of these detectors. Through ultra-low vibration mechanical cooling and wire bonding of a CMOS charge sensitive preamplifier to a sub-pF p-type point contact HPGe detector, we demonstrate electronic noise levels below 40 eV-FWHM.

  20. Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

    PubMed

    Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

    2016-12-30

    In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

  1. Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

    PubMed Central

    Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

    2016-01-01

    In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/Hz at 50 kHz, which corresponds to 100 μg/Hz. PMID:28042830

  2. Design considerations for neural amplifiers.

    PubMed

    Holleman, Jeremy

    2016-08-01

    The initial amplification stage is a critical element of a neural signal acquisition system, and the design of low-noise, low-power amplifiers has received a great deal of attention in recent publications. In this paper we discuss practical considerations for the design of amplifiers intended for neural interfaces. Noise is a major issue due to the low amplitude of neural signals. Practical system deployments also require adequate rejection of common-mode interference, such as that due to line power noise or muscle artifacts, and supply noise. This paper attempts to provide some guideance for system and circuit designers and point out opportunities for potential future exploration.

  3. A low-noise 15-μm pixel-pitch 640×512 hybrid InGaAs image sensor for night vision

    NASA Astrophysics Data System (ADS)

    Guellec, Fabrice; Dubois, Sébastien; de Borniol, Eric; Castelein, Pierre; Martin, Sébastien; Guiguet, Romain; Tchagaspanian, Micha"l.; Rouvié, Anne; Bois, Philippe

    2012-03-01

    Hybrid InGaAs focal plane arrays are very interesting for night vision because they can benefit from the nightglow emission in the Short Wave Infrared band. Through a collaboration between III-V Lab and CEA-Léti, a 640x512 InGaAs image sensor with 15μm pixel pitch has been developed. The good crystalline quality of the InGaAs detectors opens the door to low dark current (around 20nA/cm2 at room temperature and -0.1V bias) as required for low light level imaging. In addition, the InP substrate can be removed to extend the detection range towards the visible spectrum. A custom readout IC (ROIC) has been designed in a standard CMOS 0.18μm technology. The pixel circuit is based on a capacitive transimpedance amplifier (CTIA) with two selectable charge-to-voltage conversion gains. Relying on a thorough noise analysis, this input stage has been optimized to deliver low-noise performance in high-gain mode with a reasonable concession on dynamic range. The exposure time can be maximized up to the frame period thanks to a rolling shutter approach. The frame rate can be up to 120fps or 60fps if the Correlated Double Sampling (CDS) capability of the circuit is enabled. The first results show that the CDS is effective at removing the very low frequency noise present on the reference voltage in our test setup. In this way, the measured total dark noise is around 90 electrons in high-gain mode for 8.3ms exposure time. It is mainly dominated by the dark shot noise for a detector temperature settling around 30°C when not cooled. The readout noise measured with shorter exposure time is around 30 electrons for a dynamic range of 71dB in high-gain mode and 108 electrons for 79dB in low-gain mode.

  4. Low noise omnidirectional optical receiver for the mobile FSO networks

    NASA Astrophysics Data System (ADS)

    Witas, Karel; Hejduk, Stanislav; Vasinek, Vladimir; Vitasek, Jan; Latal, Jan

    2013-05-01

    A high sensitive optical receiver design for the mobile free space optical (FSO) networks is presented. There is an array of photo-detectors and preamplifiers working into same load. It is the second stage sum amplifier getting all signals together. This topology creates a parallel amplifier with an excellent signal to noise ratio (SNR). An automatic gain control (AGC) feature is included also. As a result, the effective noise suppression at the receiver side increases optical signal coverage even with the transmitter power being constant. The design has been verified on the model car which was able to respond beyond the line of sight (LOS).

  5. Nanosecond monolithic CMOS readout cell

    DOEpatents

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  6. A compact, multichannel, and low noise arbitrary waveform generator

    NASA Astrophysics Data System (ADS)

    Govorkov, S.; Ivanov, B. I.; Il'ichev, E.; Meyer, H.-G.

    2014-05-01

    A new type of high functionality, fast, compact, and easy programmable arbitrary waveform generator for low noise physical measurements is presented. The generator provides 7 fast differential waveform channels with a maximum bandwidth up to 200 MHz frequency. There are 6 fast pulse generators on the generator board with 78 ps time resolution in both duration and delay, 3 of them with amplitude control. The arbitrary waveform generator is additionally equipped with two auxiliary slow 16 bit analog-to-digital converters and four 16 bit digital-to-analog converters for low frequency applications. Electromagnetic shields are introduced to the power supply, digital, and analog compartments and with a proper filter design perform more than 110 dB digital noise isolation to the output signals. All the output channels of the board have 50 Ω SubMiniature version A termination. The generator board is suitable for use as a part of a high sensitive physical equipment, e.g., fast read out and manipulation of nuclear magnetic resonance or superconducting quantum systems and any other application, which requires electromagnetic interference free fast pulse and arbitrary waveform generation.

  7. A compact, multichannel, and low noise arbitrary waveform generator.

    PubMed

    Govorkov, S; Ivanov, B I; Il'ichev, E; Meyer, H-G

    2014-05-01

    A new type of high functionality, fast, compact, and easy programmable arbitrary waveform generator for low noise physical measurements is presented. The generator provides 7 fast differential waveform channels with a maximum bandwidth up to 200 MHz frequency. There are 6 fast pulse generators on the generator board with 78 ps time resolution in both duration and delay, 3 of them with amplitude control. The arbitrary waveform generator is additionally equipped with two auxiliary slow 16 bit analog-to-digital converters and four 16 bit digital-to-analog converters for low frequency applications. Electromagnetic shields are introduced to the power supply, digital, and analog compartments and with a proper filter design perform more than 110 dB digital noise isolation to the output signals. All the output channels of the board have 50 Ω SubMiniature version A termination. The generator board is suitable for use as a part of a high sensitive physical equipment, e.g., fast read out and manipulation of nuclear magnetic resonance or superconducting quantum systems and any other application, which requires electromagnetic interference free fast pulse and arbitrary waveform generation.

  8. A compact, multichannel, and low noise arbitrary waveform generator

    SciTech Connect

    Govorkov, S.; Ivanov, B. I.; Il'ichev, E.; Meyer, H.-G.

    2014-05-15

    A new type of high functionality, fast, compact, and easy programmable arbitrary waveform generator for low noise physical measurements is presented. The generator provides 7 fast differential waveform channels with a maximum bandwidth up to 200 MHz frequency. There are 6 fast pulse generators on the generator board with 78 ps time resolution in both duration and delay, 3 of them with amplitude control. The arbitrary waveform generator is additionally equipped with two auxiliary slow 16 bit analog-to-digital converters and four 16 bit digital-to-analog converters for low frequency applications. Electromagnetic shields are introduced to the power supply, digital, and analog compartments and with a proper filter design perform more than 110 dB digital noise isolation to the output signals. All the output channels of the board have 50 Ω SubMiniature version A termination. The generator board is suitable for use as a part of a high sensitive physical equipment, e.g., fast read out and manipulation of nuclear magnetic resonance or superconducting quantum systems and any other application, which requires electromagnetic interference free fast pulse and arbitrary waveform generation.

  9. Compound semiconductors for low-noise microwave MESFET applications

    NASA Astrophysics Data System (ADS)

    Golio, J. M.; Trew, R. J.

    1980-07-01

    The paper discusses a one-dimensional field-effect transistor (FET) model in order to determine the low-noise potential of microwave MESFET's fabricated from material other than GaAs. The model makes possible the calculation of a small-signal equivalent circuit from which performance information is acquired from material parameters and device geometry. Material parameters, predicted from Monte Carlo calculations are used to simulate 1-micron devices fabricated from GaAs, InP, Ga(0.47)In(0.53)As(0.2), and Ga(0.5)In(0.5)As(0.96)Sb(0.04). Results from simulations comparing a Ga(0.5)In(0.5)As(0.96)Sb(0.04) device to an equivalent GaAs instrument indicate that a factor of two is possible in the minimum noise figure; considerable improvement in noise performance over GaAs equipment is predicted of devices fabricated from Ga(0.47)In(0.53)As and Ga(0.27)In(0.73)P(0.04)As(0.6) materials.

  10. Low-noise THz MgB2 Josephson mixer

    NASA Astrophysics Data System (ADS)

    Cunnane, Daniel; Kawamura, Jonathan H.; Acharya, Narendra; Wolak, Matthäus A.; Xi, X. X.; Karasik, Boris S.

    2016-09-01

    The potential applications for high frequency operation of the Josephson effect in MgB2 include THz mixers, direct detectors, and digital circuits. Here we report on MgB2 weak links which exhibit the Josephson behavior up to almost 2 THz and using them for low-noise heterodyne detection of THz radiation. The devices are made from epitaxial film grown in the c-axis direction by the hybrid physical-chemical vapor deposition method. The current in the junctions travels parallel to the surface of the film, thus making possible a large contribution of the quasi-two-dimensional σ-gap in transport across the weak link. These devices are connected to a planar spiral antenna with a dielectric substrate lens to facilitate coupling to free-space radiation for use as a detector. The IcRn product of the junction is 5.25 mV, giving confirmation of a large gap parameter. The sensitivity of the mixer was measured from 0.6 THz to 1.9 THz. At a bath temperature of over 20 K, a mixer noise temperature less than 2000 K (DSB) was measured near 0.6 THz.

  11. Ultra-low noise atomically patterned nanostructures in Si

    NASA Astrophysics Data System (ADS)

    Shamim, Saquib; Weber, Bent; Simmons, Michelle Y.; Ghosh, Arindam

    2015-03-01

    Advancement in scanning tunnelling microscopy (STM) based lithography has made it possible to achieve low resistivity atomic scale wires and single donor quantum dot devices in silicon. Due to extreme sensitivity of these devices to any disorder or charge traps, it is of paramount importance to explore the noise magnitude in these systems. Here we investigate low frequency noise measurements in two STM patterned atomic scale wires of phosphorous dopants in Si of diameters 4 . 5 nm and 1 . 5 nm. The variation of noise with gate voltage indicates that the noise arises due to trapping-detrapping of electrons between the wire and charged traps. The Hooge parameter for these wires is 10-4 to 10-6 (for different gate voltages), which is one of the lowest reported for any one-dimensional system. The reason for such low noise magnitude can be two-fold. First, a complete monolithic fabrication procedure avoids any direct metallic contact to the one-dimensional system and hence prevents any Schottky barrier. Second possibility is that the Coulomb repulsion between the charges on traps doesn't allow many traps to be activated simultaneously. Aimed at being the backbone of silicon quantum computation scheme, a reduced noise in these devices is technologically crucial.

  12. Follow-on Low Noise Fan Aerodynamic Study

    NASA Technical Reports Server (NTRS)

    Heidegger, Nathan J.; Hall, Edward J.; Delaney, Robert A.

    1999-01-01

    The focus of the project was to investigate the effects of turbulence models on the prediction of rotor wake structures. The Advanced Ducted Propfan Analysis (ADPAC) code was modified through the incorporation of the Spalart-Allmaras one-equation turbulence model. Suitable test cases were solved numerically using ADPAC employing the Spalart-Allmaras turbulence model and another prediction code for comparison. A near-wall spacing study was also completed to determine the adequate spacing of the first computational cell off the wall. Solutions were also collected using two versions of the algebraic Baldwin-Lomax turbulence model in ADPAC. The effects of the turbulence model on the rotor wake definition was examined by obtaining ADPAC solutions for the Low Noise Fan rotor-only steady-flow case using the standard algebraic Baldwin-Lomax turbulence model, a modified version of the Baldwin-Lomax turbulence model and the one-equation Spalart-Allmaras turbulence model. The results from the three different turbulence modeling techniques were compared with each other and the available experimental data. These results include overall rotor performance, spanwise exit profiles, and contours of axial velocity taken along constant axial locations and along blade-to-blade surfaces. Wake characterizations were also performed on the experimental and ADPAC predicted results including the definition of a wake correlation function. Correlations were evaluated for wake width and wake depth. Similarity profiles of the wake shape were also compared between all numerical solutions and experimental data.

  13. The Speedster-EXD- A New Event-Driven Hybrid CMOS X-ray Detector

    NASA Astrophysics Data System (ADS)

    Griffith, Christopher V.; Falcone, Abraham D.; Prieskorn, Zachary R.; Burrows, David N.

    2016-01-01

    The Speedster-EXD is a new 64×64 pixel, 40-μm pixel pitch, 100-μm depletion depth hybrid CMOS x-ray detector with the capability of reading out only those pixels containing event charge, thus enabling fast effective frame rates. A global charge threshold can be specified, and pixels containing charge above this threshold are flagged and read out. The Speedster detector has also been designed with other advanced in-pixel features to improve performance, including a low-noise, high-gain capacitive transimpedance amplifier that eliminates interpixel capacitance crosstalk (IPC), and in-pixel correlated double sampling subtraction to reduce reset noise. We measure the best energy resolution on the Speedster-EXD detector to be 206 eV (3.5%) at 5.89 keV and 172 eV (10.0%) at 1.49 keV. The average IPC to the four adjacent pixels is measured to be 0.25%±0.2% (i.e., consistent with zero). The pixel-to-pixel gain variation is measured to be 0.80%±0.03%, and a Monte Carlo simulation is applied to better characterize the contributions to the energy resolution.

  14. High-dynamic-range 4-Mpixel CMOS image sensor for scientific applications

    NASA Astrophysics Data System (ADS)

    Vu, Paul; Fowler, Boyd; Liu, Chiao; Mims, Steve; Bartkovjak, Peter; Do, Hung; Li, Wang; Appelbaum, Jeff; Lopez, Angel

    2012-03-01

    As bio-technology transitions from research and development to high volume production, dramatic improvements in image sensor performance will be required to support the throughput and cost requirements of this market. This includes higher resolution, higher frame rates, higher quantum efficiencies, increased system integration, lower read-noise, and lower device costs. We present the performance of a recently developed low noise 2048(H) x 2048(V) CMOS image sensor optimized for scientific applications such as life science imaging, microscopy, as well as industrial inspection applications. The sensor architecture consists of two identical halves which can be operated independently and the imaging array consists of 4T pixels with pinned photodiodes on a 6.5μm pitch with integrated micro-lens. The operation of the sensor is programmable through a SPI interface. The measured peak quantum efficiency of the sensor is 73% at 600nm, and the read noise is about 1.1e- RMS at 100 fps data rate. The sensor features dual gain column parallel ouput amplifiers with 11-bit single slope ADCs. The full well capacity is greater than 36ke-, the dark current is less than 7pA/cm2 at 20°C. The sensor achieves an intra-scene linear dynamic range of greater than 91dB (36000:1) at room temperature.

  15. Compact, Low-Force, Low-Noise Linear Actuator

    NASA Technical Reports Server (NTRS)

    Badescu, Mircea; Sherrit, Stewart; Bar-Cohen, Yoseph

    2012-01-01

    Actuators are critical to all the robotic and manipulation mechanisms that are used in current and future NASA missions, and are also needed for many other industrial, aeronautical, and space activities. There are many types of actuators that were designed to operate as linear or rotary motors, but there is still a need for low-force, low-noise linear actuators for specialized applications, and the disclosed mechanism addresses this need. A simpler implementation of a rotary actuator was developed where the end effector controls the motion of a brush for cleaning a thermal sensor. The mechanism uses a SMA (shape-memory alloy) wire for low force, and low noise. The linear implementation of the actuator incorporates a set of springs and mechanical hard-stops for resetting and fault tolerance to mechanical resistance. The actuator can be designed to work in a pull or push mode, or both. Depending on the volume envelope criteria, the actuator can be configured for scaling its volume down to 4 2 1 cm3. The actuator design has an inherent fault tolerance to mechanical resistance. The actuator has the flexibility of being designed for both linear and rotary motion. A specific configuration was designed and analyzed where fault-tolerant features have been implemented. In this configuration, an externally applied force larger than the design force does not damage the active components of the actuator. The actuator housing can be configured and produced using cost-effective methods such as injection molding, or alternatively, its components can be mounted directly on a small circuit board. The actuator is driven by a SMA -NiTi as a primary active element, and it requires energy on the order of 20 Ws(J) per cycle. Electrical connections to points A and B are used to apply electrical power in the resistive NiTi wire, causing a phase change that contracts the wire on the order of 5%. The actuation period is of the order of a second for generating the stroke, and 4 to 10 seconds

  16. Compact, Low-Force, Low-Noise Linear Actuator

    NASA Technical Reports Server (NTRS)

    Badescu, Mircea; Sherrit, Stewart; Bar-Cohen, Yoseph

    2012-01-01

    Actuators are critical to all the robotic and manipulation mechanisms that are used in current and future NASA missions, and are also needed for many other industrial, aeronautical, and space activities. There are many types of actuators that were designed to operate as linear or rotary motors, but there is still a need for low-force, low-noise linear actuators for specialized applications, and the disclosed mechanism addresses this need. A simpler implementation of a rotary actuator was developed where the end effector controls the motion of a brush for cleaning a thermal sensor. The mechanism uses a SMA (shape-memory alloy) wire for low force, and low noise. The linear implementation of the actuator incorporates a set of springs and mechanical hard-stops for resetting and fault tolerance to mechanical resistance. The actuator can be designed to work in a pull or push mode, or both. Depending on the volume envelope criteria, the actuator can be configured for scaling its volume down to 4x2x1 cu cm. The actuator design has an inherent fault tolerance to mechanical resistance. The actuator has the flexibility of being designed for both linear and rotary motion. A specific configuration was designed and analyzed where fault-tolerant features have been implemented. In this configuration, an externally applied force larger than the design force does not damage the active components of the actuator. The actuator housing can be configured and produced using cost-effective methods such as injection molding, or alternatively, its components can be mounted directly on a small circuit board. The actuator is driven by a SMA -NiTi as a primary active element, and it requires energy on the order of 20 Ws(J) per cycle. Electrical connections to points A and B are used to apply electrical power in the resistive NiTi wire, causing a phase change that contracts the wire on the order of 5%. The actuation period is of the order of a second for generating the stroke, and 4 to 10

  17. Development of Ultra-Low-Noise TES Bolometer Arrays

    NASA Astrophysics Data System (ADS)

    Suzuki, T.; Khosropanah, P.; Ridder, M. L.; Hijmering, R. A.; Gao, J. R.; Akamatsu, H.; Gottardi, L.; van der Kuur, J.; Jackson, B. D.

    2016-07-01

    SRON is developing ultra-low-noise transition edge sensors (TESs) based on a superconducting Ti/Au bilayer on a suspended SiN island with SiN legs for SAFARI aboard SPICA. We have two major concerns about realizing TESs with an ultra-low NEP of 2× 10^{-19} hbox {W}/√{{ {Hz}}}: achieving lower thermal conductance and no excess noise with respect to the phonon noise. To realize TESs with phonon-noise-limited NEPs, we need to make thinner ({<}0.25 \\upmu hbox {m}) and narrower ({<}1 \\upmu hbox {m}) SiN legs. With deep reactive-ion etching, three types of TESs were fabricated in combination with different SiN island sizes and the presence or absence of an optical absorber. Those TESs have a thin (0.20 \\upmu hbox {m}), narrow (0.5-0.7 \\upmu hbox {m}), and long (340-460 \\upmu hbox {m}) SiN legs and show Tc of {˜ }93 hbox {mK} and Rn of {˜ }158 hbox {m}{Ω }. These TESs were characterized under AC bias using our frequency-division multiplexing readout (1-3 MHz) system. TESs without the absorber show NEPs as low as 1.1 × 10^{-19} hbox {W}/√{{ {Hz}}} with a reasonable response speed ({<}1 hbox {ms}), which achieved the phonon noise limit. For TESs with the absorber, we confirmed a higher hbox {NEP}_{el} ({˜ }5 × 10^{-19} hbox {W}/√{{ {Hz}}}) than that of TESs without the absorber likely due to stray light. The lowest NEP can make the new version of SAFARI with a grating spectrometer feasible.

  18. Low noise Raman lasers for yellow-orange spectrum coverage

    NASA Astrophysics Data System (ADS)

    Landru, Nicolas; Rouvillain, Julien; Le Bail, Guy; Georges, Thierry

    2011-02-01

    Diode lasers have been demonstrated to operate over a great part of the visible spectrum: InGaN diodes cover the violet-blue- green part (<530 nm) and InGaAlP diodes cover the red part (>635 nm). Some fluorophorus in biotechnology applications are excited by intermediate wavelengths, from 540 to 630 nm. Optically pumped InGaAs lasers were demonstrated from 460 nm up to 580 nm. Standard frequency doubled diode pumped solid state (DPSS) lasers lack of suitable transition to cover the 565-650nm region. It is possible to modify the semiconductor composition to extend the frequency range or to frequency mix DPSS laser wavelengths, but it comes either with a significant R&D effort or with a complexity in the design. Raman scattering can red-shift the strong transitions of Nd or Yb lasers so that many wavelengths lying in the 1080-1300 nm range can be achieved. Recently several CW diode pumped Raman lasers were demonstrated, some of them including intra-cavity frequency doubling or mixing. The problems with these Raman lasers are the high pump threshold and the high noise. Based on monolithic cavities, we have built several visible Raman lasers with a reduced loss presenting a low pump threshold (<1W) and a high slope efficiency. Output powers in excess of 100 mW were achieved at 588 nm with a 2.5W 808 nm pump. Laser emissions from 556 nm up to more than 610 nm were demonstrated. Noise of these lasers was analyzed and means to reach low noise operation will be discussed at the conference.

  19. Low Noise, High Detectivity Photodetectors based on Organic Materials

    NASA Astrophysics Data System (ADS)

    Guo, Fawen

    Organic photodetectors (OPDs) are potentially useful in many applications because of their light weight, flexibility and good form factors. Despite the high detectivities that have been frequently reported for OPDs recently, the application of these OPDs for weak light detection has been rarely demonstrated. In this thesis, low noise, high gain photodetectors based on organic and ZnO nanoparticles were proposed and demonstrated for highly sensitive UV light detection. The nanocomposite photodetector works in a hybrid mode of photodiode and photoconductor with the transition controlled by the UV light illumination. The nanocomposite detector shows two orders of magnitude higher sensitivity than silicon detectors in the UV range, which is the first time an organic, solution-processed detector has been shown to significantly outperform the inorganic photonic devices. In the fullerene-based photodetector, the dark-current has been successfully reduced by a cross-linked TPD (C-TPD) buffer layer. The high detectivity of 3.6 x 1011 cm Hz½ W-1 (Jones) at 370 nm and the wide Linear dynamic range (LDR) of 90 dB, along with a response speed faster than 20 kHz, suggests that the fullerene-based organic photodetectors proposed here can open the way for many potential applications. The ZnO nanoparticles have been introduced into the C-TPD buffer layer of the fullerene-based photodetector to increase the photoconductive gain and reduce the noise current. The peak external quantum efficiency (EQE) value of approximately 400% and the peak specific detectivity of 6.5 x 10 12 Jones at the wavelength of 390 nm, along with the record high LDR of 120 dB, enable the photodetector to be used in wide range of applications such as imaging, communication, and defense. The extremely high sensitivity of the photodetector also makes it particularly attractive for very weak light detection.

  20. Evaluation of a Low-Noise Formate Spiral-Bevel Gear Set

    NASA Technical Reports Server (NTRS)

    Lewicki, David g.; Woods, Ron L.; Litvin, Faydor L.; Fuentes, Alfonso

    2007-01-01

    Studies to evaluate low-noise Formate spiral-bevel gears were performed. Experimental tests were performed on the OH-58D helicopter main-rotor transmission in the NASA Glenn 500-hp Helicopter Transmission Test Stand. Low-noise Formate spiral-bevel gears were compared to the baseline OH-58D spiral-bevel gear design, a high-strength design, and previously tested low-noise designs (including an original low-noise design and an improved-bearing-contact low-noise design). Noise, vibration, and tooth strain tests were performed. The Formate design showed a decrease in noise and vibration compared to the baseline OH-58D design, and was similar to that of the previously tested improved-bearing contact low-noise design. The pinion tooth stresses for the Formate design significantly decreased in comparison to the baseline OH-58D design. Also similar to that of the improved bearing-contact low-noise design, the maximum stresses of the Formate design shifted toward the heel, compared to the center of the face width for the baseline, high-strength, and previously tested low-noise designs.

  1. Flutter Stability of the Efficient Low Noise Fan Calculated

    NASA Technical Reports Server (NTRS)

    Bakhle, Milind A.; Srivastava, Rakesh

    2004-01-01

    The TURBO-AE aeroelastic code has been used to verify the flutter stability of the Efficient Low Noise Fan (ELNF), which is also referred to as the trailing-edge blowing fan. The ELNF is a unique technology demonstrator being designed and fabricated at the NASA Glenn Research Center for testing in Glenn's 9-by-15-Foot Low-Speed Wind Tunnel. In the ELNF, air can be blown out of slots near the trailing edges of the fan blades to fill in the wakes downstream of the rotating blades. This filling of the wakes leads to a reduction of the rotor-stator interaction (tone) noise that results from the interaction of wakes with the downstream stators. The ELNF will demonstrate a 1.6-EPNdB1 reduction in tone noise through wake filling, without increasing the broadband noise. Furthermore, the reduced blade row interaction will decrease the possibility of forced response and enable closer spacing of blade rows, thus reducing engine length and weight. During the design of the ELNF, the rotor blades were checked for flutter stability using the detailed aeroelastic analysis capability of the three-dimensional Navier-Stokes TURBOAE code. The aeroelastic calculations were preceded by steady calculations in which the blades were not allowed to vibrate. For each rotational speed, as the back-pressure was increased, the mass flow rate decreased, and the operating point moved along the constant speed characteristic (speed-line) from choke to stall as shown on the fan map. The TURBO-AE aeroelastic analyses were performed separately for the first two vibration modes (bending and torsion) and covered the complete range of interblade phase angles or nodal diameters at which flutter can occur. The results indicated that the ELNF blades would not encounter flutter at takeoff conditions. The calculations were then repeated for a part-speed condition (70-percent rotational speed), and the results again showed no flutter in the operating region. On the fan map (shown), the predicted flutter point

  2. CMOS front end electronics for the ATLAS muon detector

    SciTech Connect

    Huth, J.; Oliver, J.; Hazen, E.; Shank, J.

    1997-12-31

    An all-CMOS design for an integrated ASD (Amplifier-Shaper-Discriminator) chip for readout of the ATLAS Monitored Drift Tubes (MDTs) is presented. Eight channels of charge-sensitive preamp, two-stage pole/zero shaper, Wilkinson ADC and discriminator with programmable hysteresis are integrated on a single IC. Key elements have been prototyped in 1.2 and 0.5 micron CMOS operating at 5V and 3.3V respectively.

  3. Low-noise gallium-arsenide field-effect transistor preamplifiers for stochastic beam-cooling systems

    NASA Astrophysics Data System (ADS)

    Leskovar, B.; Lo, C. C.

    1983-03-01

    The present noise performance, bandwidth capability and gain stability of bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser are summarized and compared in the 100 MHz to 40 CHz frequency range for stochastic beam cooling systems. Stability factor of GaAs FET's as a function of ambient temperature is presented and discussed. Performance data of several low-noise wide-band cryogenically cooled preamplifiers are presented including one with a noise figure of 0.35 dB over a bandwidth range of 150 to 500 MHz operating at ambient temperature of 200K. Also, data are given on a broadband 1 to 2 GHz preamplifier having a noise figure of approximately 0.2 dB. The gain, operating noise temperature, stability, gain nonuniformity and phase-shift as function of frequency of interest for beam cooling systems are discussed.

  4. A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

    NASA Astrophysics Data System (ADS)

    Kahle, Duncan; Aslam, Shahid; Herrero, Federico A.; Waczynski, Augustyn

    2016-09-01

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  5. Integrated low noise low power interface for neural bio-potentials recording and conditioning

    NASA Astrophysics Data System (ADS)

    Bottino, Emanuele; Martinoia, Sergio; Valle, Maurizio

    2005-06-01

    The recent progress in both neurobiology and microelectronics suggests the creation of new, powerful tools to investigate the basic mechanisms of brain functionality. In particular, a lot of efforts are spent by scientific community to define new frameworks devoted to the analysis of in-vitro cultured neurons. One possible approach is recording their spiking activity to monitor the coordinated cellular behaviour and get insights about neural plasticity. Due to the nature of neurons action-potentials, when considering the design of an integrated microelectronic-based recording system, a number of problems arise. First, one would desire to have a high number of recording sites (i.e. several hundreds): this poses constraints on silicon area and power consumption. In this regard, our aim is to integrate-through on-chip post-processing techniques-hundreds of bio-compatible microsensors together with CMOS standard-process low-power (i.e. some tenths of uW per channel) conditioning electronics. Each recording channel is provided with sampling electronics to insure synchronous recording so that, for example, cross-correlation between signals coming from different sites can be performed. Extra-cellular potentials are in the range of [50-150] uV, so a comparison in terms of noise-efficiency was carried out among different architectures and very low-noise pre-amplification electronics (i.e. less than 5 uVrms) was designed. As spikes measurements are made with respect to the voltage of a reference electrode, we opted for an AC-coupled differential-input preamplifier provided with band-pass filtering capability. To achieve this, we implemented large time-constant (up to seconds) integrated components in the preamp feedback path. Thus, we got rid also of random slow-drifting DC-offsets and common mode signals. The paper will present our achievements in the design and implementation of a fully integrated bio-abio interface to record neural spiking activity. In particular

  6. Low flicker-noise amplifier for 50 Ω sources

    NASA Astrophysics Data System (ADS)

    Rubiola, Enrico; Lardet-Vieudrin, Franck

    2004-05-01

    This article analyzes the design of a low-noise amplifier intended as the input front-end for the measurement of the low-frequency components (below 10 Hz) of a 50 Ω source. Low residual flicker is the main desired performance. This feature can only be appreciated if white noise is sufficiently low, and if an appropriate design ensures dc stability. An optimal solution is proposed, in which the low-noise and dc-stability features are achieved at a reasonable complexity. Gain is accurate to more than 100 kHz, which makes the amplifier an appealing external front-end for fast Fourier transform (FFT) analyzers.

  7. Ambient and Cryogenic, Decade Bandwidth, Low Noise Receiving System for Radio Astronomy Using Sinuous Antenna

    NASA Astrophysics Data System (ADS)

    Gawande, Rohit Sudhir

    Traditionally, radio astronomy receivers have been limited to bandwidths less than an octave, and as a result multiple feeds and receivers are necessary to observe over a wide bandwidth. Next generation of instruments for radio astronomy will benefit greatly from reflector antenna feeds that demonstrate very wide instantaneous bandwidth, and exhibit low noise behavior. There is an increasing interest in wideband systems from both the cost and science point of view. A wideband feed will allow simultaneous observations or sweeps over a decade or more bandwidth. Instantaneous wide bandwidth is necessary for detection of short duration pulses. Future telescopes like square kilometer array (SKA), consisting of 2000 to 3000 coherently connected antennas and covering a frequency range of 70 MHz to 30 GHz, will need decade bandwidth single pixel feeds (SPFs) along with integrated LNAs to achieve the scientific objectives in a cost effective way. This dissertation focuses on the design and measurement of a novel decade bandwidth sinuous-type, dual linear polarized, fixed phase center, low loss feed with an integrated LNA. A decade bandwidth, low noise amplifier is specially designed for noise match to the higher terminal impedance encountered by this antenna yielding an improved sensitivity over what is possible with conventional 50 O amplifiers. The self-complementary, frequency independent nature of the planar sinuous geometry results in a nearly constant beam pattern and fixed phase center over more than a 10:1 operating frequency range. In order to eliminate the back-lobe response over such a wide frequency range, we have projected the sinuous pattern onto a cone, and a ground plane is placed directly behind the cone's apex. This inverted, conical geometry assures wide bandwidth operation by locating each sinuous resonator a quarter wavelength above the ground plane. The presence of a ground plane near a self complementary antenna destroys the self complementary nature

  8. MEMS-based redundancy ring for low-noise millimeter-wave front-end

    NASA Astrophysics Data System (ADS)

    Pons, Patrick; Dubuc, David; Flourens, Federic; Saddaoui, Mohammad; Melle, Samuel; Tackacs, Alex; Tao, Junwu; Aubert, Herve; Boukabache, Ali; Paillot, T.; Blondy, Pierre; Vendier, Olivier; Grenier, Katia M.; Plana, Robert

    2004-08-01

    This paper reports on the investigation of the potentialities of the MEMS technologies to develop innovative microsystem for millimetre wave communication essentially for space applications. One main issue deals with the robustness and the reliability of the equipment as it may difficult to replace or to repair them when a satellite has been launched. One solution deals with the development of redundancy rings that are making the front end more robust. Usually, the architecture of such system involves waveguide or diode technologies, which present severe limitations in term of weight, volume and insertion loss. The concept considered in this paper is to replace some key elements of such system by MEMS based devices (Micromachined transmission lines, switches) in order to optimize both the weight and the microwave performance of the module. A specific technological process has been developed consisting in the fabrication of the devices on a dielectric membrane on air suspended in order to improve the insertion loss and the isolation. To prove the concept, building blocks have been already fabricated and measured (i.e micromachined transmission and filter featuring very low insertion loss, single pole double through circuits to address the appropriate path of the redundancy ring). We have to outline that MEMS technology have allowed a simplification of the architecture and a different system partitioning which gives more degree of freedom for the system designer. Furthermore, it has been conducted an exhaustive reliability study in order to identify the failure mechanisms. Again, from the results obtained, we have proposed an original topology for the SPDT circuit that takes into account the reliability behaviour of the MEMS devices and that allow to prevent most of the failure mechanisms reported so far (mainly related to the dielectric charging effect). Finally, the active device (millimetre wave low noise amplifier) will be reported on the MEMS based chip using

  9. PULSE AMPLIFIER

    DOEpatents

    Johnstone, C.W.

    1958-06-17

    The improvement of pulse amplifiers used with scintillation detectors is described. The pulse amplifier circuit has the advantage of reducing the harmful effects of overloading cause by large signal inputs. In general the pulse amplifier circuit comprises two amplifier tubes with the input pulses applied to one amplifier grid and coupled to the second amplifier tube through a common cathode load. The output of the second amplifier is coupled from the plate circuit to a cathode follower tube grid and a diode tube in connected from grid to cathode of the cathode follower tube. Degenerative feedback is provided in the second amplifier by coupling a signal from the cathode follower cathode to the second amplifier grid. The circuit proqides moderate gain stability, and overload protection for subsequent pulse circuits.

  10. Electronic amplifiers: A compilation

    NASA Technical Reports Server (NTRS)

    1971-01-01

    Several types of amplifiers and amplifier systems are considered. These include preamplifiers, high power amplifiers, buffer and isolation amplifiers, amplifier circuits, and general purpose amplifiers.

  11. A full on-chip, low noise, low power consumption reference generator in monolithic active pixel sensors

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Gao, Deyuan; Valin, Isabelle; Dorokhov, Andrei; Hu, Yann

    2011-12-01

    The monolithic active pixel sensor (MAPS) is a promising choice to track charged particles in high energy physics experiments, such as the solenoidal tracker at RHIC (STAR). In order to achieve a clean reference voltage and simplify the cable placement, a full on-chip reference generator is presented in this paper. By utilizing a buffer and a series RC network, the proposed circuit can achieve good stability, low power and low noise, without any external components. The output voltage is adjustable to compensate the influence of the fabrication process. The generator has been implemented and fabricated in a standard 0.35 μm CMOS process. Its silicon area is 327 μm×119 μm. The total power dissipation is 677 μW at a supply voltage of 3.3 V. The measured results show that only 5.84% of the total noise in MAPS is induced by the proposed reference generator. The comparison with the other optional circuit based on a current buffer is also presented.

  12. On noise in time-delay integration CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Levski, Deyan; Choubey, Bhaskar

    2016-05-01

    Time delay integration sensors are of increasing interest in CMOS processes owing to their low cost, power and ability to integrate with other circuit readout blocks. This paper presents an analysis of the noise contributors in current day CMOS Time-Delay-Integration image sensors with various readout architectures. An analysis of charge versus voltage domain readout modes is presented, followed by a noise classification of the existing Analog Accumulator Readout (AAR) and Digital Accumulator Readout (DAR) schemes for TDI imaging. The analysis and classification of existing readout schemes include, pipelined charge transfer, buffered direct injection, voltage as well as current-mode analog accumulators and all-digital accumulator techniques. Time-Delay-Integration imaging modes in CMOS processes typically use an N-number of readout steps, equivalent to the number of TDI pixel stages. In CMOS TDI sensors, where voltage domain readout is used, the requirements over speed and noise of the ADC readout chain are increased due to accumulation of the dominant voltage readout and ADC noise with every stage N. Until this day, the latter is the primary reason for a leap-back of CMOS TDI sensors as compared to their CCD counterparts. Moreover, most commercial CMOS TDI implementations are still based on a charge-domain readout, mimicking a CCD-like operation mode. Thus, having a good understanding of each noise contributor in the signal chain, as well as its magnitude in different readout architectures, is vital for the design of future generation low-noise CMOS TDI image sensors based on a voltage domain readout. This paper gives a quantitative classification of all major noise sources for all popular implementations in the literature.

  13. Design and optimization of BCCD in CMOS technology

    NASA Astrophysics Data System (ADS)

    Gao, Jing; Li, Yi; Gao, Zhi-yuan; Luo, Tao

    2016-09-01

    This paper optimizes the buried channel charge-coupled device (BCCD) structure fabricated by complementary metal oxide semiconductor (CMOS) technology. The optimized BCCD has advantages of low noise, high integration and high image quality. The charge transfer process shows that interface traps, weak fringing fields and potential well between adjacent gates all cause the decrease of charge transfer efficiency ( CTE). CTE and well capacity are simulated with different operating voltages and gap sizes. CTE can achieve 99.999% and the well capacity reaches up to 25 000 electrons for the gap size of 130 nm and the maximum operating voltage of 3 V.

  14. The 8.4-GHz low-noise maser pump source assembly

    NASA Technical Reports Server (NTRS)

    Cardenas, R.

    1987-01-01

    Improved pump source assemblies and new 8.4-GHz low noise traveling-wave masers (TWMs) were installed at the same time at Deep Space Stations 14 and 43 as part of the Mark IVA DSCC Antenna Microwave Subsystems upgrade. The pump source assemblies are part of the new 8.4-GHz TWMs, which are identified as Block IIA Low-Noise TWMs. Improved reliability of the pump source assemblies was required to meet stress analysis criteria.

  15. Integrated Spectral Low Noise Image Sensor with Nanowire Polarization Filters for Low Contrast Imaging

    DTIC Science & Technology

    2015-11-05

    AFRL-AFOSR-VA-TR-2015-0359 Integrated Spectral Low Noise Image Sensor with Nanowire Polarization Filters for Low Contrast Imaging Viktor Gruev...To) 02/15/2011 - 08/15/2015 4. TITLE AND SUBTITLE Integrated Spectral Low Noise Image Sensor with Nanowire Polarization Filters for Low Contrast...investigate alternative spectral imaging architectures based on my previous experience in this research area. I will develop nanowire polarization

  16. Low-noise collision operators for particle-in-cell simulations

    SciTech Connect

    Lewandowski, J.L.V.

    2005-05-15

    A new method to implement low-noise collision operators in particle-in-cell simulations is presented. The method is based on the fact that relevant collision operators can be included naturally in the Lagrangian formulation that exemplifies the particle-in-cell simulation method. Numerical simulations show that the momentum and energy conservation properties of the simulated plasma associated with the low-noise collision operator are improved as compared with standard collision algorithms based on random numbers.

  17. Low-noise Collision Operators for Particle-in-cell Simulations

    SciTech Connect

    J.L.V. Lewandowski

    2005-03-08

    A new method to implement low-noise collision operators in particle-in-cell simulations is presented. The method is based on the fact that relevant collision operators can be included naturally in the Lagrangian formulation that exemplifies the particle-in-cell simulation method. Numerical simulations show that the momentum and energy conservation properties of the simulated plasma associated with the low-noise collision operator are improved as compared with standard collision algorithms based on random numbers.

  18. Development of a low-noise, 4th-order readout ASIC for CdZnTe detectors in gamma spectrometer applications

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Su, Lin; Wei, Xiaomin; Zheng, Ran; Hu, Yann

    2016-09-01

    This paper presents an ASIC readout circuit development, which aims to achieve low noise. In order to compensate the leakage current and improve gain, a dual-stage CSA has been utilized. A 4th-order high-linearity shaper is proposed to obtain a Semi-Gaussian wave and further decrease the noise induced by the leakage current. The ASIC has been designed and fabricated in a standard commercial 2P4M 0.35 μm CMOS process. Die area of one channel is about 1190 μm×147 μm. The input charge range is 1.8 fC. The peaking time can be adjusted from 1 μs to 3 μs. Measured ENC is about 55e- (rms) at input capacitor of 0 F. The gain is 271 mV/fC at the peaking time of 1 μs.

  19. Calculations of superconducting parametric amplifiers performances

    NASA Astrophysics Data System (ADS)

    Goto, T.; Takeda, M.; Saito, S.; Shimakage, H.

    2017-07-01

    A superconducting parametric amplifier is an electromagnetic wave amplifier with high-quality characteristics such as a wide bandwidth, an extremely low noise, and a high dynamic range. In this paper, we report on the estimations of a YBCO superconducting parametric amplifier characteristic. The YBCO thin films were deposited on an MgO substrate by a pulsed laser deposition method. Based on the measured YBCO thin film parameters, theoretical calculations were implemented for evaluations of kinetic inductance nonlinearities and parametric gains. The nonlinearity of the YBCO thin film was estimated to be stronger than a single crystal NbTiN thin film. It is indicated that the YBCO parametric amplifier has a potential to be realized the amplifier with the high parametric gain. It is also expected that it could be operated in the range of the high frequency band, at the high temperature, and low applied current.

  20. Monolithic CMOS-MEMS integration for high-g accelerometers

    NASA Astrophysics Data System (ADS)

    Narasimhan, Vinayak; Li, Holden; Tan, Chuan Seng

    2014-10-01

    This paper highlights work-in-progress towards the conceptualization, simulation, fabrication and initial testing of a silicon-germanium (SiGe) integrated CMOS-MEMS high-g accelerometer for military, munition, fuze and shock measurement applications. Developed on IMEC's SiGe MEMS platform, the MEMS offers a dynamic range of 5,000 g and a bandwidth of 12 kHz. The low noise readout circuit adopts a chopper-stabilization technique implementing the CMOS through the TSMC 0.18 µm process. The device structure employs a fully differential split comb-drive set up with two sets of stators and a rotor all driven separately. Dummy structures acting as protective over-range stops were designed to protect the active components when under impacts well above the designed dynamic range.

  1. Inertia Wheel on Low-Noise Active Magnetic Suspension

    NASA Astrophysics Data System (ADS)

    Carabelli, S.; Genta, G.; Silvagni, M.; Tonoli, A.

    2002-01-01

    Magnetic bearings are particularly suited for space applications for a number of reasons: - they are ideally suited for vacuum applications; - the lack of lubrication and wear enhances the reliability and guaranties a long maintenance-free operation - the low drag torque decreases power consumption and reduces the torque exerted on the stator of the machine. - the possibility of insulating actively the spacecraft from the excitation due to unbalance of the rotating system In the case of reaction wheels, a well designed magnetic suspension allows high speed operation with a very low power consumption and vibration level. Conversely, microgravity (and possibly vacuum) operation is an advantage for magnetic bearings. The absence of static forces allows to operate with low current levels, thus reducing electrical noise and allowing to reach even lower vibration levels than in Earth applications of magnetic bearings. Active magnetic bearings (AMB) allow to adapt the working characteristics of the system to the operating needs: it is possible to use the actuators to lock the system during launch (absence of grabbers) and to stiffen the suspension when the spacecraft is accelerated (impulsive phases), while working in conditions optimised for microgravity when this is needed. Magnetic suspension systems designed for microgravity environment cannot be correctly tested on the ground. Testing in ground conditions results in the need of grossly overdesigning the levitation device; furthermore, in some cases ground testing is completely impossible, if not by introducing devices which compensate for the Earth gravitational field. If the compensation for the gravitational force is supplied by the same actuators used for microgravity operation, the actuators and the power amplifiers must be overdesigned and in some cases the suspension can be altogether impossible. They work in conditions which are much different from nominal ones and, above all, it is impossible to reach the

  2. LOGARITHMIC AMPLIFIER

    DOEpatents

    De Shong, J.A. Jr.

    1957-12-31

    A logarithmic current amplifier circuit having a high sensitivity and fast response is described. The inventor discovered the time constant of the input circuit of a system utilizing a feedback amplifier, ionization chamber, and a diode, is inversely proportional to the input current, and that the amplifier becomes unstable in amplifying signals in the upper frequency range when the amplifier's forward gain time constant equals the input circuit time constant. The described device incorporates impedance networks having low frequency response characteristic at various points in the circuit to change the forward gain of the amplifler at a rate of 0.7 of the gain magnitude for every two times increased in frequency. As a result of this improvement, the time constant of the input circuit is greatly reduced at high frequencies, and the amplifier response is increased.

  3. Versatile quantitative phase imaging system applied to high-speed, low noise and multimodal imaging (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Federici, Antoine; Aknoun, Sherazade; Savatier, Julien; Wattellier, Benoit F.

    2017-02-01

    Quadriwave lateral shearing interferometry (QWLSI) is a well-established quantitative phase imaging (QPI) technique based on the analysis of interference patterns of four diffraction orders by an optical grating set in front of an array detector [1]. As a QPI modality, this is a non-invasive imaging technique which allow to measure the optical path difference (OPD) of semi-transparent samples. We present a system enabling QWLSI with high-performance sCMOS cameras [2] and apply it to perform high-speed imaging, low noise as well as multimodal imaging. This modified QWLSI system contains a versatile optomechanical device which images the optical grating near the detector plane. Such a device is coupled with any kind of camera by varying its magnification. In this paper, we study the use of a sCMOS Zyla5.5 camera from Andor along with our modified QWLSI system. We will present high-speed live cell imaging, up to 200Hz frame rate, in order to follow intracellular fast motions while measuring the quantitative phase information. The structural and density information extracted from the OPD signal is complementary to the specific and localized fluorescence signal [2]. In addition, QPI detects cells even when the fluorophore is not expressed. This is very useful to follow a protein expression with time. The 10 µm spatial pixel resolution of our modified QWLSI associated to the high sensitivity of the Zyla5.5 enabling to perform high quality fluorescence imaging, we have carried out multimodal imaging revealing fine structures cells, like actin filaments, merged with the morphological information of the phase. References [1]. P. Bon, G. Maucort, B. Wattellier, and S. Monneret, "Quadriwave lateral shearing interferometry for quantitative phase microscopy of living cells," Opt. Express, vol. 17, pp. 13080-13094, 2009. [2] P. Bon, S. Lécart, E. Fort and S. Lévêque-Fort, "Fast label-free cytoskeletal network imaging in living mammalian cells," Biophysical journal, 106

  4. Design of low noise wind turbine blades using Betz and Joukowski concepts

    NASA Astrophysics Data System (ADS)

    Shen, W. Z.; Hrgovan, I.; Okulov, V.; Zhu, W. J.; Madsen, J.

    2014-06-01

    This paper presents the aerodynamic design of low noise wind turbine blades using Betz and Joukowski concepts. The aerodynamic model is based on Blade Element Momentum theory whereas the aeroacoustic prediction model is based on the BPM model. The investigation is started with a 3MW baseline/reference turbine rotor with a diameter of 80 m. To reduce the noise emission from the baseline rotor, the rotor is reconstructed with the low noise CQU-DTU-LN1 series of airfoils which has been tested in the acoustic wind tunnel located at Virginia Tech. Finally, 3MW low noise turbine rotors are designed using the concepts of Betz and Joukowski, and the CQU-DTU-LN1 series of airfoils. Performance analysis shows that the newly designed turbine rotors can achieve an overall noise reduction of 6 dB and 1.5 dB(A) with a similar power output as compared to the reference rotor.

  5. Operational Amplifiers.

    ERIC Educational Resources Information Center

    Foxcroft, G. E.

    1986-01-01

    Addresses the introduction of low cost equipment into high school and college physical science classes. Examines the properties of an "ideal" operational amplifier and discusses how it might be used under saturated and non-saturated conditions. Notes the action of a "real" operational amplifier. (TW)

  6. Operational Amplifiers.

    ERIC Educational Resources Information Center

    Foxcroft, G. E.

    1986-01-01

    Addresses the introduction of low cost equipment into high school and college physical science classes. Examines the properties of an "ideal" operational amplifier and discusses how it might be used under saturated and non-saturated conditions. Notes the action of a "real" operational amplifier. (TW)

  7. Amplifier Distortion

    NASA Astrophysics Data System (ADS)

    Keeports, David

    2006-12-01

    By definition, a high fidelity amplifier's instantaneous output voltage is directly proportional to its instantaneous input voltage. While high fidelity is generally valued in the amplification of recorded music, nonlinearity, also known as distortion, is desirable in the amplification of some musical instruments. In particular, guitar amplifiers exploit nonlinearity to increase both the harmonic content and sustain of a guitar's sound. I will discuss how both modifications in sound result from saturation of triode tubes and transistors. Additionally, I will describe the difference in the symmetry of saturation curves for transistors and tubes and the reason why tube guitar amplifiers are generally considered to be superior to solid-state amplifiers. Finally, I will discuss attempts to use solid-state electronics to replicate the sound of tube amplifiers.

  8. Reducing Printed Circuit Board Emissions with Low-Noise Design Practices

    NASA Technical Reports Server (NTRS)

    Bradley, Arthur T.; Fowler, Jennifer; Yavoich, Brian J.; Jennings, Stephen A.

    2012-01-01

    This paper presents the results of an experiment designed to determine the effectiveness of adopting several low-noise printed circuit board (PCB) design practices. Two boards were designed and fabricated, each consisting of identical mixed signal circuitry. Several important differences were introduced between the board layouts: one board was constructed using recommended low-noise practices and the other constructed without such attention. The emissions from the two boards were then measured and compared, demonstrating an improvement in radiated emissions of up to 22 dB.

  9. A RF receiver frontend for SC-UWB in a 0.18-μm CMOS process

    NASA Astrophysics Data System (ADS)

    Rui, Guo; Haiying, Zhang

    2012-12-01

    A radio frequency (RF) receiver frontend for single-carrier ultra-wideband (SC-UWB) is presented. The front end employs direct-conversion architecture, and consists of a differential low noise amplifier (LNA), a quadrature mixer, and two intermediate frequency (IF) amplifiers. The proposed LNA employs source inductively degenerated topology. First, the expression of input impedance matching bandwidth in terms of gate-source capacitance, resonant frequency and target S11 is given. Then, a noise figure optimization strategy under gain and power constraints is proposed, with consideration of the integrated gate inductor, the bond-wire inductance, and its variation. The LNA utilizes two stages with different resonant frequencies to acquire flat gain over the 7.1-8.1 GHz frequency band, and has two gain modes to obtain a higher receiver dynamic range. The mixer uses a double balanced Gilbert structure. The front end is fabricated in a TSMC 0.18-μm RF CMOS process and occupies an area of 1.43 mm2. In high and low gain modes, the measured maximum conversion gain are 42 dB and 22 dB, input 1 dB compression points are -40 dBm and -20 dBm, and S11 is better than -18 dB and -14.5 dB. The 3 dB IF bandwidth is more than 500 MHz. The double sideband noise figure is 4.7 dB in high gain mode. The total power consumption is 65 mW from a 1.8 V supply.

  10. Monolithic CMOS imaging x-ray spectrometers

    NASA Astrophysics Data System (ADS)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  11. Development of a transimpedance amplifier for cryotemperatures, study

    NASA Astrophysics Data System (ADS)

    Brunsmann, U.; Frenzl, O.; Zimmer, G.; Wrede, M.

    1984-06-01

    Design, construction and measured data of three versions of a monolithic transimpedance amplifier for cryotemperatures are described. The amplifier is implemented in Si-gate-CMOS technology and provided with a MOSFET, a process-compatible JFET and an open input. The implemented versions of the amplifier do not reach the simulated operating points because of the shift of the characteristics at cryotemperatures. With respect to power dissipation and noise, it is necessary to redesign the amplifier, in order to fabricate amplifiers suitable for the German infrared observatory GIRL on Spacelab.

  12. Construction and Testing of Compact Low-Noise Hydrophones with Extended Frequency Response

    DTIC Science & Technology

    2004-06-01

    preamplifier performance was tested and documented herein. 15. NUMBER OF PAGES 77 14. SUBJECT TERMS Hydrophone, Sound Receiver, Transducer , Low Noise...During the last half century, the development of electroacoustic transducers in underwater acoustics, has been based on the well-known piezoelectric...their chemical composition. This results in three properties that are extremely useful in a transducer operation: linearity, passivity and

  13. Single-Chip CMUT-on-CMOS Front-End System for Real-Time Volumetric IVUS and ICE Imaging

    PubMed Central

    Gurun, Gokce; Tekes, Coskun; Zahorian, Jaime; Xu, Toby; Satir, Sarp; Karaman, Mustafa; Hasler, Jennifer; Degertekin, F. Levent

    2014-01-01

    Intravascular ultrasound (IVUS) and intracardiac echography (ICE) catheters with real-time volumetric ultrasound imaging capability can provide unique benefits to many interventional procedures used in the diagnosis and treatment of coronary and structural heart diseases. Integration of CMUT arrays with front-end electronics in single-chip configuration allows for implementation of such catheter probes with reduced interconnect complexity, miniaturization, and high mechanical flexibility. We implemented a single-chip forward-looking (FL) ultrasound imaging system by fabricating a 1.4-mm-diameter dual-ring CMUT array using CMUT-on-CMOS technology on a front-end IC implemented in 0.35-µm CMOS process. The dual-ring array has 56 transmit elements and 48 receive elements on two separate concentric annular rings. The IC incorporates a 25-V pulser for each transmitter and a low-noise capacitive transimpedance amplifier (TIA) for each receiver, along with digital control and smart power management. The final shape of the silicon chip is a 1.5-mm-diameter donut with a 430-µm center hole for a guide wire. The overall front-end system requires only 13 external connections and provides 4 parallel RF outputs while consuming an average power of 20 mW. We measured RF A-scans from the integrated single-chip array which show full functionality at 20.1 MHz with 43% fractional bandwidth. We also tested and demonstrated the image quality of the system on a wire phantom and an ex-vivo chicken heart sample. The measured axial and lateral point resolutions are 92 µm and 251 µm, respectively. We successfully acquired volumetric imaging data from the ex-vivo chicken heart with 60 frames per second without any signal averaging. These demonstrative results indicate that single-chip CMUT-on-CMOS systems have the potential to produce real-time volumetric images with image quality and speed suitable for catheter based clinical applications. PMID:24474131

  14. Single-chip CMUT-on-CMOS front-end system for real-time volumetric IVUS and ICE imaging.

    PubMed

    Gurun, Gokce; Tekes, Coskun; Zahorian, Jaime; Xu, Toby; Satir, Sarp; Karaman, Mustafa; Hasler, Jennifer; Degertekin, F Levent

    2014-02-01

    Intravascular ultrasound (IVUS) and intracardiac echography (ICE) catheters with real-time volumetric ultrasound imaging capability can provide unique benefits to many interventional procedures used in the diagnosis and treatment of coronary and structural heart diseases. Integration of capacitive micromachined ultrasonic transducer (CMUT) arrays with front-end electronics in single-chip configuration allows for implementation of such catheter probes with reduced interconnect complexity, miniaturization, and high mechanical flexibility. We implemented a single-chip forward-looking (FL) ultrasound imaging system by fabricating a 1.4-mm-diameter dual-ring CMUT array using CMUT-on-CMOS technology on a front-end IC implemented in 0.35-μm CMOS process. The dual-ring array has 56 transmit elements and 48 receive elements on two separate concentric annular rings. The IC incorporates a 25-V pulser for each transmitter and a low-noise capacitive transimpedance amplifier (TIA) for each receiver, along with digital control and smart power management. The final shape of the silicon chip is a 1.5-mm-diameter donut with a 430-μm center hole for a guide wire. The overall front-end system requires only 13 external connections and provides 4 parallel RF outputs while consuming an average power of 20 mW. We measured RF A-scans from the integrated single- chip array which show full functionality at 20.1 MHz with 43% fractional bandwidth. We also tested and demonstrated the image quality of the system on a wire phantom and an ex vivo chicken heart sample. The measured axial and lateral point resolutions are 92 μm and 251 μm, respectively. We successfully acquired volumetric imaging data from the ex vivo chicken heart at 60 frames per second without any signal averaging. These demonstrative results indicate that single-chip CMUT-on-CMOS systems have the potential to produce realtime volumetric images with image quality and speed suitable for catheter-based clinical applications.

  15. Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

    2009-01-01

    In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

  16. Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

    2009-01-01

    In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

  17. Broadband Characterization of a 100 to 180 GHz Amplifier

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka; Deal, W. R.; Mei, X. B.; Lai, R.

    2007-01-01

    Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).

  18. A simplified poly(dimethylsiloxane) capillary electrophoresis microchip integrated with a low-noise contactless conductivity detector.

    PubMed

    Liu, Benyan; Zhang, Yi; Mayer, Dirk; Krause, Hans-Joachim; Jin, Qinghui; Zhao, Jianlong; Offenhäusser, Andreas

    2011-03-01

    A contactless conductivity detector integrated into a poly(dimethylsiloxane) microchip for electrophoresis is presented. It adopted the simplest configuration of electrodes commonly used in this detection mode for capillary electrophoresis microchips. Although the chip is based on a simple and effective design, it is able to obtain low detection levels due to the low noise of the detection circuit. A circuit based on a lock-in amplifier was designed on printed circuit boards to read out the signal. The property of the detection cell was studied by applying excitation signals of different frequencies and different amplitudes. It was found that the best detection limit could be achieved with a frequency of 50 kHz and amplitude of 20 V. The performance of the detector was demonstrated by successfully separating and detecting several inorganic ions and also a mixture of heavy metal ions. An average detection limit of 0.4 μM was obtained for inorganic cations. This value is significantly improved compared to similar microchip-based detectors. The presented detector could be promising for mass production due to its properties, such as simple construction, high degree of integration, high performance and low cost.

  19. Development of a low noise induction magnetic sensor using magnetic flux negative feedback in the time domain.

    PubMed

    Wang, X G; Shang, X L; Lin, J

    2016-05-01

    Time-domain electromagnetic system can implement great depth detection. As for the electromagnetic system, the receiver utilized an air coil sensor, and the matching mode of the sensor employed the resistance matching method. By using the resistance matching method, the vibration of the coil in the time domain can be effectively controlled. However, the noise of the sensor, especially the noise at the resonance frequency, will be increased as well. In this paper, a novel design of a low noise induction coil sensor is proposed, and the experimental data and noise characteristics are provided. The sensor is designed based on the principle that the amplified voltage will be converted to current under the influence of the feedback resistance of the coil. The feedback loop around the induction coil exerts a magnetic field and sends the negative feedback signal to the sensor. The paper analyses the influence of the closed magnetic feedback loop on both the bandwidth and the noise of the sensor. The signal-to-noise ratio is improved dramatically.

  20. CMOS-sensors for energy-resolved X-ray imaging

    NASA Astrophysics Data System (ADS)

    Doering, D.; Amar-Youcef, S.; Baudot, J.; Deveaux, M.; Dulinski, W.; Kachel, M.; Linnik, B.; Müntz, C.; Stroth, Joachim

    2016-01-01

    Due to their low noise, CMOS Monolithic Active Pixel Sensors are suited to sense X-rays with a few keV quantum energy, which is of interest for high resolution X-ray imaging. Moreover, the good energy resolution of the silicon sensors might be used to measure this quantum energy. Combining both features with the good spatial resolution of CMOS sensors opens the potential to build ``color sensitive" X-ray cameras. Taking such colored images is hampered by the need to operate the CMOS sensors in a single photon counting mode, which restricts the photon flux capability of the sensors. More importantly, the charge sharing between the pixels smears the potentially good energy resolution of the sensors. Based on our experience with CMOS sensors for charged particle tracking, we studied techniques to overcome the latter by means of an offline processing of the data obtained from a CMOS sensor prototype. We found that the energy resolution of the pixels can be recovered at the expense of reduced quantum efficiency. We will introduce the results of our study and discuss the feasibility of taking colored X-ray pictures with CMOS sensors.

  1. 434 W all-fiber linear-polarization dual-frequency Yb-doped fiber laser carrying low-noise radio frequency signal.

    PubMed

    Huang, Long; Li, Lei; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu

    2016-11-14

    We demonstrate a high power dual-frequency linear-polarization fiber laser that carries radio frequency signal. Such fiber laser is based on an all-fiber master oscillator power amplifier configuration that consists of a dual-frequency seed laser and three-stage amplifiers. The dual-frequency seed laser is constructed by recombining two beams that are split from a single-frequency linearly-polarized laser. One beam has initial frequency and the other beam is modulated by an acoustic-optical modulator to have a frequency shift of 150 MHz. Then the radio frequency signal of 150 MHz is carried on the laser due to the beat frequency of these two beams. In the main amplifier, a piece of polarization maintaining large-mode-area fiber with short length is used to combine the SBS suppression with high power amplification. As a result, the dual-frequency laser is amplified to 434 W without the occurrence of SBS. The slope efficiency is 81.3%. The polarization degree of the laser and the modulation depth of the optically carried radio frequency signal are both well maintained during the amplification process. Besides, a high signal-noise-ratio of above 75 dB is realized, which demonstrates the low-noise property of the optically carried radio frequency signal. To the best of our knowledge, this is the highest reported output power of the optically carried radio frequency signal.

  2. Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

    NASA Astrophysics Data System (ADS)

    Sokolov, V.; Geddes, J.; Contolatis, A.

    A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

  3. A Multipurpose CMOS Platform for Nanosensing

    PubMed Central

    Bonanno, Alberto; Sanginario, Alessandro; Marasso, Simone L.; Miccoli, Beatrice; Bejtka, Katarzyna; Benetto, Simone; Demarchi, Danilo

    2016-01-01

    This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μm × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus. PMID:27916911

  4. A Multipurpose CMOS Platform for Nanosensing.

    PubMed

    Bonanno, Alberto; Sanginario, Alessandro; Marasso, Simone L; Miccoli, Beatrice; Bejtka, Katarzyna; Benetto, Simone; Demarchi, Danilo

    2016-11-30

    This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW-229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  5. Multi-target electrochemical biosensing enabled by integrated CMOS electronics

    NASA Astrophysics Data System (ADS)

    Rothe, J.; Lewandowska, M. K.; Heer, F.; Frey, O.; Hierlemann, A.

    2011-05-01

    An integrated electrochemical measurement system, based on CMOS technology, is presented, which allows the detection of several analytes in parallel (multi-analyte) and enables simultaneous monitoring at different locations (multi-site). The system comprises a 576-electrode CMOS sensor chip, an FPGA module for chip control and data processing, and the measurement laptop. The advantages of the highly versatile system are demonstrated by two applications. First, a label-free, hybridization-based DNA sensor is enabled by the possibility of large-scale integration in CMOS technology. Second, the detection of the neurotransmitter choline is presented by assembling the chip with biosensor microprobe arrays. The low noise level enables a limit of detection of, e.g., 0.3 µM choline. The fully integrated system is self-contained: it features cleaning, functionalization and measurement functions without the need for additional electrical equipment. With the power supplied by the laptop, the system is very suitable for on-site measurements.

  6. Implantable CMOS Biomedical Devices

    PubMed Central

    Ohta, Jun; Tokuda, Takashi; Sasagawa, Kiyotaka; Noda, Toshihiko

    2009-01-01

    The results of recent research on our implantable CMOS biomedical devices are reviewed. Topics include retinal prosthesis devices and deep-brain implantation devices for small animals. Fundamental device structures and characteristics as well as in vivo experiments are presented. PMID:22291554

  7. LOGARITHMIC AMPLIFIER

    DOEpatents

    Wade, E.J.; Stone, R.S.

    1959-03-10

    Electronic,amplifier circuits, especially a logai-ithmic amplifier characterizxed by its greatly improved strability are discussed. According to the in ention, means are provided to feed bach the output valtagee to a diode in the amplifier input circuit, the diode being utilized to produce the logarithmic characteristics. The diode is tics, The diode isition therewith and having its filament operated from thc same source s the filament of the logarithmic diode. A bias current of relatively large value compareii with the signal current is continuously passed through the compiting dioie to render the diode insensitivy to variations in the signal current. by this odes kdu to variaelled, so that the stability of the amlifier will be unimpaired.

  8. Resonant isolator for maser amplifier

    NASA Technical Reports Server (NTRS)

    Clauss, R. C.; Quinn, R. B. (Inventor)

    1983-01-01

    An isolator is described for use in a low noise maser amplifier, which provides low loss across a wide bandwidth and which can be constructed at moderate cost. The isolator includes a train of garnet or ferrite elements extending along the length of a microwave channel parallel to the slow wave structure, with the elements being of staggered height, so that the thin elements which are resonant to the microwaves are separated by much thicker elements. The thick garnet or ferrite elements reduce the magnetic flux passing through the thin elements to permit altering of the shape of the thin elements so as to facilitate their fabrication and to provide better isolation with reduced loss, by increasing the thickness of the thin elements and decreasing their length and width.

  9. Bidirectional amplifier

    DOEpatents

    Wright, James T.

    1986-01-01

    A bilateral circuit is operable for transmitting signals in two directions without generation of ringing due to feedback caused by the insertion of the circuit. The circuit may include gain for each of the signals to provide a bidirectional amplifier. The signals are passed through two separate paths, with a unidirectional amplifier in each path. A controlled sampling device is provided in each path for sampling the two signals. Any feedback loop between the two signals is disrupted by providing a phase displacement between the control signals for the two sampling devices.

  10. Bidirectional amplifier

    DOEpatents

    Wright, J.T.

    1984-02-02

    A bilateral circuit is operable for transmitting signals in two directions without generation of ringing due to feedback caused by the insertion of the circuit. The circuit may include gain for each of the signals to provide a bidirectional amplifier. The signals are passed through two separate paths, with a unidirectional amplifier in each path. A controlled sampling device is provided in each path for sampling the two signals. Any feedback loop between the two signals is disrupted by providing a phase displacement between the control signals for the two sampling devices.

  11. Development of low noise cantilever deflection sensor for multienvironment frequency-modulation atomic force microscopy

    SciTech Connect

    Fukuma, Takeshi; Kimura, Masayuki; Kobayashi, Kei; Matsushige, Kazumi; Yamada, Hirofumi

    2005-05-15

    We have developed a low noise cantilever deflection sensor with a deflection noise density of 17 fm/{radical}(Hz) by optimizing the parameters used in optical beam deflection (OBD) method. Using this sensor, we have developed a multienvironment frequency-modulation atomic force microscope (FM-AFM) that can achieve true molecular resolution in various environments such as in moderate vacuum, air, and liquid. The low noise characteristic of the deflection sensor makes it possible to obtain a maximum frequency sensitivity limited by the thermal Brownian motion of the cantilever in every environment. In this paper, the major noise sources in OBD method are discussed in both theoretical and experimental aspects. The excellent noise performance of the deflection sensor is demonstrated in deflection and frequency measurements. True molecular-resolution FM-AFM images of a polydiacetylene single crystal taken in vacuum, air, and water are presented.

  12. A low-noise differential microphone inspired by the ears of the parasitoid fly Ormia ochracea.

    PubMed

    Miles, R N; Su, Q; Cui, W; Shetye, M; Degertekin, F L; Bicen, B; Garcia, C; Jones, S; Hall, N

    2009-04-01

    A miniature differential microphone is described having a low-noise floor. The sensitivity of a differential microphone suffers as the distance between the two pressure sensing locations decreases, resulting in an increase in the input sound pressure-referred noise floor. In the microphone described here, both the diaphragm thermal noise and the electronic noise are minimized by a combination of novel diaphragm design and the use of low-noise optical sensing that has been integrated into the microphone package. The differential microphone diaphragm measures 1 x 2 mm(2) and is fabricated out of polycrystalline silicon. The diaphragm design is based on the coupled directionally sensitive ears of the fly Ormia ochracea. The sound pressure input-referred noise floor of this miniature differential microphone has been measured to be less than 36 dBA.

  13. Energy-filtered Electron Transport Structures for Low-power Low-noise 2-D Electronics.

    PubMed

    Pan, Xuan; Qiu, Wanzhi; Skafidas, Efstratios

    2016-10-31

    In addition to cryogenic techniques, energy filtering has the potential to achieve high-performance low-noise 2-D electronic systems. Assemblies based on graphene quantum dots (GQDs) have been demonstrated to exhibit interesting transport properties, including resonant tunnelling. In this paper, we investigate GQDs based structures with the goal of producing energy filters for next generation lower-power lower-noise 2-D electronic systems. We evaluate the electron transport properties of the proposed GQD device structures to demonstrate electron energy filtering and the ability to control the position and magnitude of the energy passband by appropriate device dimensioning. We also show that the signal-to-thermal noise ratio performance of the proposed nanoscale device can be modified according to device geometry. The tunability of two-dimensional GQD structures indicates a promising route for the design of electron energy filters to produce low-power and low-noise electronics.

  14. Miniature Low-Noise G-Band I-Q Receiver

    NASA Technical Reports Server (NTRS)

    Kangaslahti, Pekka P.; Pukala, David M.; Gaier, Todd C.; Tanner, Alan B.; O'Dwyer, Ian J.; Lambrigtsen, Bjom H.; Soria, Mary M.; Owen, Heather R.; Lai, Richard; Mei, Xiaobing

    2010-01-01

    Weather forecasting, hurricane tracking, and atmospheric science applications depend on humidity sounding of atmosphere. Current instruments provide these measurements from groundbased, airborne, and low Earth orbit (LEO) satellites by measuring radiometric temperature on the flanks of the 183-GHz water vapor line. Miniature, low-noise receivers have been designed that will enable these measurements from a geostationary, thinned array sounder, which is based on hundreds of low-noise receivers that convert the 180-GHz signal directly to baseband in-phase and in-quadrature signals for digitization and correlation. The developed receivers provide a noise temperature of 450 K from 165 to 183 GHz (NF = 4.1 dB), and have a mass of 3 g while consuming 24 mW of power. These are the most sensitive broadband I-Q receivers at this frequency range that operate at room temperature, and are significantly lower in mass and power consumption than previously reported receivers.

  15. Energy-filtered Electron Transport Structures for Low-power Low-noise 2-D Electronics

    PubMed Central

    Pan, Xuan; Qiu, Wanzhi; Skafidas, Efstratios

    2016-01-01

    In addition to cryogenic techniques, energy filtering has the potential to achieve high-performance low-noise 2-D electronic systems. Assemblies based on graphene quantum dots (GQDs) have been demonstrated to exhibit interesting transport properties, including resonant tunnelling. In this paper, we investigate GQDs based structures with the goal of producing energy filters for next generation lower-power lower-noise 2-D electronic systems. We evaluate the electron transport properties of the proposed GQD device structures to demonstrate electron energy filtering and the ability to control the position and magnitude of the energy passband by appropriate device dimensioning. We also show that the signal-to-thermal noise ratio performance of the proposed nanoscale device can be modified according to device geometry. The tunability of two-dimensional GQD structures indicates a promising route for the design of electron energy filters to produce low-power and low-noise electronics. PMID:27796343

  16. Fluids and Combustion Facility Acoustic Emissions Controlled by Aggressive Low-Noise Design Process

    NASA Technical Reports Server (NTRS)

    Cooper, Beth A.; Young, Judith A.

    2004-01-01

    The Fluids and Combustion Facility (FCF) is a dual-rack microgravity research facility that is being developed by Northrop Grumman Information Technology (NGIT) for the International Space Station (ISS) at the NASA Glenn Research Center. As an on-orbit test bed, FCF will host a succession of experiments in fluid and combustion physics. The Fluids Integrated Rack (FIR) and the Combustion Integrated Rack (CIR) must meet ISS acoustic emission requirements (ref. 1), which support speech communication and hearing-loss-prevention goals for ISS crew. To meet these requirements, the NGIT acoustics team implemented an aggressive low-noise design effort that incorporated frequent acoustic emission testing for all internal noise sources, larger-scale systems, and fully integrated racks (ref. 2). Glenn's Acoustical Testing Laboratory (ref. 3) provided acoustical testing services (see the following photograph) as well as specialized acoustical engineering support as part of the low-noise design process (ref. 4).

  17. Countermeasure against blinding attacks on low-noise detectors with a background-noise-cancellation scheme

    NASA Astrophysics Data System (ADS)

    Lee, Min Soo; Park, Byung Kwon; Woo, Min Ki; Park, Chang Hoon; Kim, Yong-Su; Han, Sang-Wook; Moon, Sung

    2016-12-01

    We developed a countermeasure against blinding attacks on low-noise detectors with a background-noise-cancellation scheme in quantum key distribution (QKD) systems. Background-noise cancellation includes self-differencing and balanced avalanche photon diode (APD) schemes and is considered a promising solution for low-noise APDs, which are critical components in high-performance QKD systems. However, its vulnerability to blinding attacks has been recently reported. In this work, we propose a countermeasure that prevents this potential security loophole from being used in detector blinding attacks. An experimental QKD setup is implemented and various tests are conducted to verify the feasibility and performance of the proposed method. The obtained measurement results show that the proposed scheme successfully detects occurring blinding-attack-based hacking attempts.

  18. Development of low noise cantilever deflection sensor for multienvironment frequency-modulation atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Fukuma, Takeshi; Kimura, Masayuki; Kobayashi, Kei; Matsushige, Kazumi; Yamada, Hirofumi

    2005-05-01

    We have developed a low noise cantilever deflection sensor with a deflection noise density of 17fm/√Hz by optimizing the parameters used in optical beam deflection (OBD) method. Using this sensor, we have developed a multienvironment frequency-modulation atomic force microscope (FM-AFM) that can achieve true molecular resolution in various environments such as in moderate vacuum, air, and liquid. The low noise characteristic of the deflection sensor makes it possible to obtain a maximum frequency sensitivity limited by the thermal Brownian motion of the cantilever in every environment. In this paper, the major noise sources in OBD method are discussed in both theoretical and experimental aspects. The excellent noise performance of the deflection sensor is demonstrated in deflection and frequency measurements. True molecular-resolution FM-AFM images of a polydiacetylene single crystal taken in vacuum, air, and water are presented.

  19. Energy-filtered Electron Transport Structures for Low-power Low-noise 2-D Electronics

    NASA Astrophysics Data System (ADS)

    Pan, Xuan; Qiu, Wanzhi; Skafidas, Efstratios

    2016-10-01

    In addition to cryogenic techniques, energy filtering has the potential to achieve high-performance low-noise 2-D electronic systems. Assemblies based on graphene quantum dots (GQDs) have been demonstrated to exhibit interesting transport properties, including resonant tunnelling. In this paper, we investigate GQDs based structures with the goal of producing energy filters for next generation lower-power lower-noise 2-D electronic systems. We evaluate the electron transport properties of the proposed GQD device structures to demonstrate electron energy filtering and the ability to control the position and magnitude of the energy passband by appropriate device dimensioning. We also show that the signal-to-thermal noise ratio performance of the proposed nanoscale device can be modified according to device geometry. The tunability of two-dimensional GQD structures indicates a promising route for the design of electron energy filters to produce low-power and low-noise electronics.

  20. Low Noise Double-Sided Silicon Strip Detector for Multiple-Compton Gamma-ray Telescope

    SciTech Connect

    Tajima, Hiroyasu

    2002-12-03

    A Semiconductor Multiple-Compton Telescope (SMCT) is being developed to explore the gamma-ray universe in an energy band 0.1-20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of the SMCT is the high energy resolution that is crucial for high angular resolution and high background rejection capability. We have developed prototype modules for a low noise Double-sided Silicon Strip Detector (DSSD) system which is an essential element of the SMCT. The geometry of the DSSD is optimized to achieve the lowest noise possible. A new front-end VLSI device optimized for low noise operation is also developed. We report on the design and test results of the prototype system. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at 0 C.

  1. ZnCdSe/ZnSe quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Al-Mossawi, Muwaffaq Abdullah

    2017-02-01

    Gain of CdZnSe quantum dot (QD) semiconductor optical amplifiers (SOAs) is studied theoretically using non-Markovian gain model including many-body effects. The calculations are done at three mole fractions. Spontaneous emission and noise figure of the amplifier are studied. The effect of shot noise is included. High gain, polarization independence, and low noise figure are characterize these QD-SOAs. A multi-mode gain appears for Zn0.69Cd0.31Se structure while the structure Zn0.6Cd0.4Se give a low noise.

  2. Versatile, dynamically balanced low-noise optical-field manipulator using a coherently prepared atomic medium.

    PubMed

    Li, Yan; Zhu, Chengjie; Deng, L; Hagley, E W; Garrett, W R

    2015-11-15

    We propose a versatile dynamic optical-field manipulator using a coherently prepared atomic medium. We show that by locking the pump power change with the two-photon detuning, a π-phase shifting can be realized with unit probe fidelity in a broad two-photon detuning range. The two-photon-insensitive π-phase-shift mode with significantly reduced fluctuation makes this scheme an attractive system for low-noise phase-gate operations.

  3. Improved PHIP polarization using a precision, low noise, voltage controlled current source.

    PubMed

    Agraz, Jose; Grunfeld, Alexander; Cunningham, Karl; Li, Debiao; Wagner, Shawn

    2013-10-01

    Existing para-hydrogen induced polarization (PHIP) instrumentation relies on magnetic fields to hyperpolarize substances. These hyperpolarized substances have enhanced magnetic resonance imaging (MRI) signals over 10,000 fold, allowing for MRI at the molecular level. Required magnetic fields are generated by energizing a solenoid coil with current produced by a voltage controlled voltage source (VCVS), also known as a power supply. A VCVS lacks the current regulation necessary to keep magnetic field fluctuations to a minimum, which results in low PHIP polarization. A voltage controlled current source (VCCS) is an electric circuit that generates a steady flow of electrons proportional to an input voltage. A low noise VCCS provides the solenoid current flow regulation necessary to generate a stable static magnetic field (Bo). We discuss the design and implementation of a low noise, high stability, VCCS for magnetic field generation with minimum variations. We show that a precision, low noise, voltage reference driving a metal oxide semiconductor field effect transistor (MOSFET) based current sink, results in the current flow control necessary for generating a low noise and high stability Bo. In addition, this work: (1) compares current stability for ideal VCVS and VCCS models using transfer functions (TF), (2) develops our VCCS design's TF, (3) measures our VCCS design's thermal & 1/f noise, and (4) measures and compares hydroxyethyl-propionate (HEP) polarization obtained using a VCVS and our VCCS. The hyperpolarization of HEP was done using a PHIP instrument developed in our lab. Using our VCCS design, HEP polarization magnitude data show a statistically significant increase in polarization over using a VCVS. Circuit schematic, bill of materials, board layout, TF derivation, and Matlab simulations code are included as supplemental files.

  4. Amplified Policymaking

    ERIC Educational Resources Information Center

    Prince, Katherine; Woempner, Carolyn

    2010-01-01

    This brief examines the policy implications of two drivers of change presented in the "2020 Forecast: Creating the Future of Learning"-- Pattern Recognition and Amplified Organization. These drivers point toward a series of cultural shifts and illuminate how we are developing new ways of organizing, constructing, and managing knowledge.…

  5. An Extremely Wide Bandwidth, Low Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

    NASA Technical Reports Server (NTRS)

    Zmuidzinas, J.

    2004-01-01

    Our group has designed a heterodyne submillimeter receiver that offers a very wide IF bandwidth of 12 GHz, while still maintaining a low noise temperature. The 180-300 GHz double-sideband design uses a single SI5 device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz. providing an instantaneous RF bandwidth of 24 GHz (double-sideband). Intensive simulations predict that the junction will achieve a conversion loss better than 1-2 dB and a mixer noise temperature of less than 20 K across the band (twice the quantum limit). The single sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical and environmental observations beyond the capabilities of current instruments. Lab testing of the receiver will begin this summer, and first light on the CSO should be in the Spring of 2003. At the CSO, we plan to use receiver with WASP2, a wideband spectrometer, to search for spectral lines from SCUBA sources. This approach should allow us to rapidly develop a catalog of redshifts for these objects.

  6. Low noise optical multi-carrier generation using optical-FIR filter for ASE noise suppression in re-circulating frequency shifter loop.

    PubMed

    Lin, Jiachuan; Xi, Lixia; Li, Jianrui; Zhang, Xiaoguang; Zhang, Xia; Niazi, Shahab Ahmad

    2014-04-07

    In this paper, an improved multi-carrier generation scheme based on single-side-band recirculating frequency shifter with optical finite impulse response (FIR) filter for amplified spontaneous emission (ASE) noise suppression is proposed and experimentally demonstrated. The carrier-to-noise-ratio (CNR) instead of tone-to-noise-ratio (TNR) is introduced to more reasonably and exactly evaluate the signal-to-noise-ratio of a multi-carrier source with non-flat noise floor. We have experimentally attain the worst case CNR of 22.5dB and 19.1dB for generated 50 and 69 flat low noise carriers, which has shown significant improvement than the previous cited works based on recirculating frequency shifter.

  7. Wide modulation bandwidth terahertz detection in 130 nm CMOS technology

    NASA Astrophysics Data System (ADS)

    Nahar, Shamsun; Shafee, Marwah; Blin, Stéphane; Pénarier, Annick; Nouvel, Philippe; Coquillat, Dominique; Safwa, Amr M. E.; Knap, Wojciech; Hella, Mona M.

    2016-11-01

    Design, manufacturing and measurements results for silicon plasma wave transistors based wireless communication wideband receivers operating at 300 GHz carrier frequency are presented. We show the possibility of Si-CMOS based integrated circuits, in which by: (i) specific physics based plasma wave transistor design allowing impedance matching to the antenna and the amplifier, (ii) engineering the shape of the patch antenna through a stacked resonator approach and (iii) applying bandwidth enhancement strategies to the design of integrated broadband amplifier, we achieve an integrated circuit of the 300 GHz carrier frequency receiver for wireless wideband operation up to/over 10 GHz. This is, to the best of our knowledge, the first demonstration of low cost 130 nm Si-CMOS technology, plasma wave transistors based fast/wideband integrated receiver operating at 300 GHz atmospheric window. These results pave the way towards future large scale (cost effective) silicon technology based terahertz wireless communication receivers.

  8. Improved Space Object Observation Techniques Using CMOS Detectors

    NASA Astrophysics Data System (ADS)

    Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

    2013-08-01

    CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

  9. A low noise single-transistor transimpedance preamplifier for Fourier-transform mass spectrometry using a T feedback network

    PubMed Central

    Lin, Tzu-Yung; Green, Roger J.; O’Connor, Peter B.

    2012-01-01

    A novel single-transistor transimpedance preamplifier has been introduced for improving performance in Fourier-transform ion cyclotron resonance (FT-ICR) mass spectrometry. A low noise junction field-effect transistor (JFET), BF862, is used as the main amplification stage of this trans-impedance preamplifier, and a T-shaped feedback network is introduced as both the feedback and the gate biasing solutions. The T feedback network has been studied using an operational amplifier (Op Amp), AD8099. Such a feedback system allows ∼100-fold less feedback resistance at a given transimpedance, hence preserving bandwidth, which is beneficial to applications demanding high gain. The single-transistor preamplifier yields a tested transimpedance of ∼104 Ω (80 dBΩ) in the frequency range between 1 kHz and 1 MHz (mass-to-charge ratio, m/z, of around 180-180k for a 12-T FT-ICR system), with a low power consumption of ∼6 mW, which implies that this preamplifier is well suited to a 12-T FT-ICR mass spectrometer. In trading noise performance for higher trans-impedance, an alternative preamplifier design, an AD8099 preamplifier with the T feedback network, has also been studied with a capability of ∼106 Ω (120 dBΩ) transimpedance in the same frequency range. The resistive components in the T feedback network reported here can be replaced by complex impedances, which allows adaptation of this feedback system to other frequency, transimpedance, and noise characteristics for applications not only in other mass spectrometers, such as Orbitrap, time-of-flight (TOF), and ion trap systems, but also in other charge/current detecting systems such as spectroscopy systems, microscopy systems, optical communication systems, or charge-coupled devices (CCDs). PMID:23020394

  10. Building strong partnerships with CMOs.

    PubMed

    Dye, Carson F

    2014-07-01

    CFOs and chief medical officers (CMOs) can build on common traits to form productive partnerships in guiding healthcare organizations through the changes affecting the industry. CFOs can strengthen bonds with CMOs by taking steps to engage physicians on their own turf--by visiting clinical locations and attending medical-executive committee meetings, for example. Steps CFOs can take to help CMOs become more acquainted with the financial operations of health systems include demonstrating the impact of clinical decisions on costs and inviting CMOs to attend finance-related meetings.

  11. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    PubMed

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e(-) RMS at room temperature.

  12. Low-noise reset technique of an asynchronous charge-pulse-detecting pixel for single-photon X-ray imaging

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Sik; Han, Kwan-Young

    2016-02-01

    This paper presents a low-noise reset technique of an asynchronous charge-pulse-detecting pixel for single-photon X-ray imaging. The proposed slow-slope ramp (S2R) reset scheme provides a reset-noise-discharging loop circuit and effectively eliminates the residual noise charge stored on the sampling capacitor by extending the falling transition time of the reset signal. In addition, the presented S2R reset signal generation circuit accurately and effectively controls the optimum switching voltage and the falling transition time of the reset signal. The prototype detector chip was implemented by using a 130-nm complementary metal-oxide semiconductor (CMOS) process. With the quantitative analysis and the measurement results, we were able to verify that the reset noise was reduced exponentially, corresponding to the falling transition time of the reset signal. Based on the chip measurement results, the reset-noise level could be decreased by more than seven-fold by virtue of the proposed reset technique.

  13. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-01-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event’s time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e− RMS at room temperature. PMID:24187382

  14. A broadband 47-67 GHz LNA with 17.3 dB gain in 65-nm CMOS

    NASA Astrophysics Data System (ADS)

    Chong, Wang; Zhiqun, Li; Qin, Li; Yang, Liu; Zhigong, Wang

    2015-10-01

    A broadband 47-67 GHz low noise amplifier (LNA) with 17.3 dB gain in 65-nm CMOS technology is proposed. The features of millimeter wave circuits are illustrated first and design methodologies are discussed. The wideband input matching of the LNA was achieved by source inductive degeneration, which is narrowband in the low-GHz range but wideband at millimeter-wave frequencies due to the existence of gate-drain capacitance, Cgd. In order to minimize the noise figure (NF), the LNA used a common-source (CS) structure rather than cascode in the first stage, and the noise matching principle is explored. The last two stages of the LNA used a cascode structure to increase the power gain. Analysis of the gain boost effect of the gate inductor at the common-gate (CG) transistor is also performed. T-shape matching networks between stages are intended to enlarge the bandwidth. All on-chip inductors and transmission lines are modeled and simulated with a 3-dimensional electromagnetic (EM) simulation tool to guarantee the success of the design. Measurement results show that the LNA achieves a maximum gain of 17.3 dB at 60 GHz, while the 3-dB bandwidth is 20 GHz (47-67 GHz), including the interested band of 59-64 GHz, and the minimum noise figure is 4.9 dB at 62 GHz. The LNA absorbs a current of 19 mA from a 1.2 V supply and the chip occupies an area of 900 × 550 μm2 including pads. Project supported by the National High Technology Research and Development Program of China (No. 2011AA010202).

  15. Multi-channel amplifier system for computerized topographic EEG analysis.

    PubMed

    Coppola, R; Morgan, N T

    1987-08-01

    Topographic analysis of EEG and evoked potentials requires the computer processing of data from multi-lead recording. The use of 20 or more channels is now quite common, straining the resources of the usual EEG machine. We present a design for a high gain, low noise, 32-channel amplifier matched to computer data acquisition requirements. Low cost and small size are additional benefits to the design.

  16. Quasi-optical constrained lens amplifiers

    NASA Astrophysics Data System (ADS)

    Schoenberg, Jon S.

    1995-09-01

    A major goal in the field of quasi-optics is to increase the power available from solid state sources by combining the power of individual devices in free space, as demonstrated with grid oscillators and grid amplifiers. Grid amplifiers and most amplifier arrays require a plane wave feed, provided by a far field source or at the beam waist of a dielectric lens pair. These feed approaches add considerable loss and size, which is usually greater than the quasi-optical amplifier gain. In addition, grid amplifiers require external polarizers for stability, further increasing size and complexity. This thesis describes using constrained lens theory in the design of quasi optical amplifier arrays with a focal point feed, improving the power coupling between the feed and the amplifier for increased gain. Feed and aperture arrays of elements, input/output isolation and stability, amplifier circuitry, delay lines and bias distribution are all contained on a single planar substrate, making monolithic circuit integration possible. Measured results of X band transmission lenses and a low noise receive lens are presented, including absolute power gain up to 13 dB, noise figure as low as 1.7 dB, beam scanning to +/-30 deg, beam forming and beam switching of multiple sources, and multiple level quasi-optical power combining. The design and performance of millimeter wave power combining amplifier arrays is described, including a Ka Band hybrid array with 1 watt output power, and a V Band 36 element monolithic array with a 5 dB on/off ratio.

  17. Test results of a 20 GHz, low noise downconverter for USAT applications

    NASA Technical Reports Server (NTRS)

    Fujikawa, Gene; Svoboda, James S.

    1995-01-01

    A key component in the development of the Advanced Communications Technology Satellite (ACTS) ultra small aperture terminal (USAT) earth station is the low noise downconverter (NLD). NASA Lewis Research Center (LeRC) has tested a version of an LND designed by Electrodyne Systems Corporation. A number of tests were conducted to characterize the radio frequency performance of the LND over temperature. The test results presented in this paper are frequency response, noise figure, gain, group delay, power transfer characteristics, image rejection, and spurious product suppression. The LND was one of several critical microwave subsystems developed and tested for the ACTS USAT earth stations.

  18. Air backed mandrel type fiber optic hydrophone with low noise floor

    NASA Astrophysics Data System (ADS)

    Rajesh, R.; V, Sreehari C.; N, Praveen Kumar; Awasthi, R. L.; K, Vivek; B, Vishnu M.; Santhanakrishnan, T.; Moosad, K. P. B.; Mathew, Basil

    2014-10-01

    Low noise fiber optic hydrophone based on optical fiber coil wound on air-backed mandrel was developed. The sensor can be effectively used for underwater acoustic sensing. The design and characterization of the hydrophone is illustrated in this paper. A fiber Mach-Zehnder Interferometer (MZI) was developed and coupled with a Distributed Feedback (DFB) fiber laser source and an optical phase demodulation system, with an active modulation in one of the arms. The sensor head design was optimized to achieve noise spectral density <10 μrad/√Hz, for yielding sufficient sensitivity to sense acoustic pressure close to Deep Sea Sate Zero (DSS0).

  19. Design and Calibration of a Compact Low-Noise Magnetic Gradiometer

    NASA Astrophysics Data System (ADS)

    Griffin, D. K.; Masseglia, O.; Hall, M.; Trougnou, L.; Hewitson, M.; Howe, C.; Olly Pountz-Wright, M.; Leopoldi, L. Ding.; Turner, S.; Harmon, S.

    2012-05-01

    The paper describes the design, test and calibration of a compact, low-noise magnetic gradiometer developed under contract to ESA (Contract reference: AO/1- 6085/09/NL/AF) by the Science and Technology Facility Council, Rutherford Appleton Laboratory (RAL Space), Bartington Instruments and the National Physical Laboratory (NPL). The gradiometer is being developed as a technology pathfinder for a diagnostics payload to characterize magnetic disturbances around space instruments susceptible to magnetic fields and gradients such as the candidate Cosmic Vision mission LISA/NGO. The gradiometer is also to be used in the verification of the magnetic cleanliness of spacecraft and spacecraft subsystems.

  20. Low noise wing slat system with rigid cove-filled slat

    NASA Technical Reports Server (NTRS)

    Shmilovich, Arvin (Inventor); Yadlin, Yoram (Inventor)

    2013-01-01

    Concepts and technologies described herein provide for a low noise aircraft wing slat system. According to one aspect of the disclosure provided herein, a cove-filled wing slat is used in conjunction with a moveable panel rotatably attached to the wing slat to provide a high lift system. The moveable panel rotates upward against the rear surface of the slat during deployment of the slat, and rotates downward to bridge a gap width between the stowed slat and the lower wing surface, completing the continuous outer mold line shape of the wing, when the cove-filled slat is retracted to the stowed position.

  1. Low noise Kα-band hopping reflectometer based on yttrium iron garnet sources at TEXTOR

    NASA Astrophysics Data System (ADS)

    Soldatov, S.; Krämer-Flecken, A.; Zorenko, O.

    2011-03-01

    The heterodyne hopping reflectometer system based on wide-tuned low noise yttrium iron garnet sources was developed for TEXTOR experiment. Being installed in 1998 it successfully operates more than 10 years providing the measurements of plasma density fluctuations. Owing to the advance multihorn antennae systems installed at three different positions around the tokamak, the correlation properties as well as the propagation measurements of plasma density fluctuations are realized. The reflectometer operates in ordinary polarization mode providing the access mostly to plasma gradient and pedestal region. The capabilities of the diagnostic are illustrated with the examples of measured fluctuation characteristics in the variety of TEXTOR plasmas.

  2. A 20 GHz low noise, low cost receiver for digital satellite communication system, ground terminal applications

    NASA Technical Reports Server (NTRS)

    Allen, Glen

    1988-01-01

    A 45 month effort for the development of a 20 GHz, low-noise, low-cost receiver for digital, satellite communication system, ground terminal applications is discussed. Six proof-of-concept receivers were built in two lots of three each. Performance was generally consistent between the two lots. Except for overall noise figure, parameters were within or very close to specification. While noise figure was specified as 3.5 dB, typical performance was measured at 3.0 to 5.5 dB, over the full temperature range of minus 30 C to plus 75 C.

  3. 10×10-pixel 606kS/s multi-point fluorescence correlation spectroscopy CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Kagawa, Keiichiro; Takasawa, Taishi; Bo, Zhang; Seo, Min-Woong; Imai, Kaita; Yamamoto, Jotaro; Kinjo, Masataka; Terakawa, Susumu; Yasutomi, Keita; Kawahito, Shoji

    2014-03-01

    To observe molecular transport in a living cell, a high-speed CMOS image sensor for multi-point fluorescence correlation spectroscopy is developed. To achieve low-noise and high-speed simultaneously, a prototype CMOS image sensor is designed based on a complete pixel-parallel architecture and multi-channel pipelined pixel readout. The prototype chip with 10×10 effective pixels is fabricated in 0.18-μm CMOS image sensor technology. The pixel pitch and the photosensitive area are 56μm and 10μm in diameter without a microlens, respectively. In the experiment, the total sampling rate of 606kS/s is achieved. The measured average random noise is 24.9LSB, which is equivalent to about 2.5 electrons in average.

  4. DEVELOPMENT OF S-BAND LOW-NOISE PERIODIC PERMANENT MAGNETIC TRAVELING-WAVE TUBE

    DTIC Science & Technology

    MICROWAVE AMPLIFIERS, *TRAVELING WAVE TUBES, ANODES, DESIGN, ELECTRON BEAMS, ELECTRON GUNS, FOCUSING , HELIXES, IMPEDANCE MATCHING, MAGNETIC FIELDS, MAGNETS, NOISE (RADIO), REDUCTION, S BAND, STANDING WAVE RATIOS

  5. The microstrip SQUID amplifier

    NASA Astrophysics Data System (ADS)

    Therrien, Roy

    A Superconducting Quantum Interference Devices (SQUIDS) can operate at frequencies up to several GHz and can be cooled to less than 100 mK. Such characteristics make the SQUID---a flux-to-voltage transducer---an excellent candidate for use as a low-noise rf amplifier. Coupling of input signals of frequencies larger than 200 MHz, however, has been limited by the parasitic capacitance between the input coil and SQUID body. We present experimental observations of a do SQUID-based rf amplifier which circumvents this problem by incorporating the input coil as a microstrip resonator. The microstrip input configuration uses the capacitance and inductance of the input coil to form a resonant cavity capable of operating up to several GHz. The input signal is applied between the SQUID body and one end of the input coil, while the other end of the coil is left open. We present data from microstrip SQUID amplifiers with gains of up to 22 dB at 900 MHz. In order to understand the gain and input impedance of the microstrip SQUID in greater detail, we made and studied a 1:190 scale analog patterned on a double-sided printed circuit board consisting of copper deposited on a kapton sheet. The measured input impedance of the analog SQUID is successfully modeled by describing the microstrip input as a low-loss transmission line. When operated with the slit in the copper washer ground plane shorted, the input coil behaves exactly like a linear resonator with the resonant frequency given by f = 1/2ℓ(L 0C0)1/2, where L0 and C0 are the inductance and capacitance per unit length and ℓ is the coil length. With the slit in the washer left open, the inductance of the input coil is significantly altered in a manner partially consistent with the Ketchen-Jaycox model in which the reflected inductance of the input coil is Li = n2L, where L is the inductance of the washer loop and n is the number of turns in the coil. We present input impedance measurements on microstrip SQUIDs cooled to 4

  6. Wide-Temperature-Range Integrated Operational Amplifier

    NASA Technical Reports Server (NTRS)

    Mojarradi, Mohammad; Levanas, Greg; Chen, Yuan; Kolawa, Elizabeth; Cozy, Raymond; Blalock, Benjamin; Greenwell, Robert; Terry, Stephen

    2007-01-01

    A document discusses a silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) integrated- circuit operational amplifier to be replicated and incorporated into sensor and actuator systems of Mars-explorer robots. This amplifier is designed to function at a supply potential less than or equal to 5.5 V, at any temperature from -180 to +120 C. The design is implemented on a commercial radiation-hard SOI CMOS process rated for a supply potential of less than or equal to 3.6 V and temperatures from -55 to +110 C. The design incorporates several innovations to achieve this, the main ones being the following: NMOS transistor channel lengths below 1 m are generally not used because research showed that this change could reduce the adverse effect of hot carrier injection on the lifetimes of transistors at low temperatures. To enable the amplifier to withstand the 5.5-V supply potential, a circuit topology including cascade devices, clamping devices, and dynamic voltage biasing was adopted so that no individual transistor would be exposed to more than 3.6 V. To minimize undesired variations in performance over the temperature range, the transistors in the amplifier are biased by circuitry that maintains a constant inversion coefficient over the temperature range.

  7. An Extremely Wide Bandwidth, Low-Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

    NASA Technical Reports Server (NTRS)

    Sumner, Matthew; Blain, Andrew; Harris, Andrew; Hu, Robert; Rice, Frank; LeDuc, H. G.; Weinreb, Sander; Zmuidzinas, Jonas

    2002-01-01

    Millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We present the design for a broadband, sensitive, heterodyne spectrometer under development for the Caltech Submillimeter Observatory (CSO). The 180-300 GHz double-sideband design uses a single SIS device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss should be no more than 1-2 dB with mixer noise temperatures across the band within 10 K of the quantum limit. The single-sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and the first use on the CSO should occur in the spring of 2003.

  8. Non-destructive single-pass low-noise detection of ions in a beamline

    SciTech Connect

    Schmidt, Stefan; Murböck, Tobias; Birkl, Gerhard; Andelkovic, Zoran; Vogel, Manuel; Nörtershäuser, Wilfried; Stahl, Stefan

    2015-11-15

    We have conceived, built, and operated a device for the non-destructive single-pass detection of charged particles in a beamline. The detector is based on the non-resonant pick-up and subsequent low-noise amplification of the image charges induced in a cylindrical electrode surrounding the particles’ beam path. The first stage of the amplification electronics is designed to be operated from room temperature down to liquid helium temperature. The device represents a non-destructive charge counter as well as a sensitive timing circuit. We present the concept and design details of the device. We have characterized its performance and show measurements with low-energy highly charged ions (such as Ar{sup 13+}) passing through one of the electrodes of a cylindrical Penning trap. This work demonstrates a novel approach of non-destructive, low noise detection of charged particles which is, depending on the bunch structure, suitable, e.g., for ion traps, low-energy beamlines or accelerator transfer sections.

  9. Microfabricated Teflon Membranes for Low-Noise Recordings of Ion Channels in Planar Lipid Bilayers

    PubMed Central

    Mayer, Michael; Kriebel, Jennah K.; Tosteson, Magdalena T.; Whitesides, George M.

    2003-01-01

    We present a straightforward, accessible method for the fabrication of micropores with diameters from 2 to 800 μm in films of amorphous Teflon (Teflon AF). Pores with diameters ≤40 μm made it possible to record ion fluxes through ion channels in planar bilayers with excellent signal characteristics. These pores afforded: i), stable measurements at transmembrane voltages up to 460 mV; ii), recordings at low noise levels (0.4 pA rms at 4.3 kHz bandwidth); iii), recordings at high effective bandwidth (10.7 kHz); and iv), formation of multiple planar lipid bilayers in parallel. Microfabricated pores in films of Teflon AF made it possible to examine, experimentally and theoretically, the influence of the pore diameter on the current noise in planar bilayer recordings. Reducing the pore diameter below 40 μm mainly increased the stability of the planar bilayers, but had only a small effect on the level of the current noise. The low-noise properties of bilayer recordings on micropores in Teflon AF films were exploited to record the smallest conductance state of alamethicin (24 pS) at an unprecedentedly high bandwidth of 10.7 kHz. PMID:14507731

  10. A Low Noise, High QE, Large Format CCD Camera System for the NASA MIGHTI Instrument

    NASA Astrophysics Data System (ADS)

    Hancock, J. J.; Cardon, J.; Watson, M.; Cook, J.; Whiteley, M.; Beukers, J.; Englert, C. R.; Brown, C. M.; Harlander, J.

    2015-12-01

    The Michelson Interferometer for Global High-resolution Thermospheric Imaging (MIGHTI) instrument is part of the NASA Ionspheric Connection Explorer (ICON) mission designed to uncover the mysteries of the extreme variability of the Earth's ionosphere. MIGHTI consists of two identical units positioned to observe the Earth's low latitude thermosphere from perpendicular viewing directions. The MIGHTI instrument is a spatial heterodyne spectrometer and requires a low noise, high QE, large format camera system to detect slight phase changes in the fringe patterns which reveal the neutral wind velocity. The MIGHTI camera system uses a single control electronics box to operate two identical CCD camera heads and communicate with the ICON payload electronics. The control electronics are carefully designed for a low noise implementation of CCD biases, clocking, and CCD output digitization. The camera heads consist of a 2k by 2K, back-illuminated, frame transfer CCD provided by e2v. The CCD's are both TEC cooled and have butcher-block filters mounted in close proximity of the active area. The CCDs are nominally operated in binned mode, the control electronics register settings provide flexibility for binning and gain control. An engineering model of the camera system has been assembled and tested. The EM camera system characterization meets all performance requirements. Performance highlights include a measured read noise of 5.7 electrons and dark current of 0.01 electronics/pixel/second. The camera system design and characterization results will be presented.

  11. Low Noise Cruise Efficient Short Take-Off and Landing Transport Vehicle Study

    NASA Technical Reports Server (NTRS)

    Kim, Hyun D.; Berton, Jeffrey J.; Jones, Scott M.

    2007-01-01

    The saturation of the airspace around current airports combined with increasingly stringent community noise limits represents a serious impediment to growth in world aviation travel. Breakthrough concepts that both increase throughput and reduce noise impacts are required to enable growth in aviation markets. Concepts with a 25 year horizon must facilitate a 4x increase in air travel while simultaneously meeting community noise constraints. Attacking these horizon issues holistically is the concept study of a Cruise Efficient Short Take-Off and Landing (CESTOL) high subsonic transport under the NASA's Revolutionary Systems Concepts for Aeronautics (RSCA) project. The concept is a high-lift capable airframe with a partially embedded distributed propulsion system that takes a synergistic approach in propulsion-airframe-integration (PAI) by fully integrating the airframe and propulsion systems to achieve the benefits of both low-noise short take-off and landing (STOL) operations and efficient high speed cruise. This paper presents a summary of the recent study of a distributed propulsion/airframe configuration that provides low-noise STOL operation to enable 24-hour use of the untapped regional and city center airports to increase the capacity of the overall airspace while still maintaining efficient high subsonic cruise flight capability.

  12. A Wide-Bandwidth, Low-Noise SIS Receiver Design for Millimeter and Submillimeter Wavelengths

    NASA Technical Reports Server (NTRS)

    Sumner, Matthew; Blain, Andrew; Harris, Andrew; Hu, Robert; LeDuc, Henry G.; Miller, David; Rice, Frank; Weinreb, Sander; Zmuidzinas, Jonas

    2004-01-01

    In principle, millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We are applying modem design tools, such as 3D electromagnetic simulators and Caltech's SuperMix SIS analysis package, to develop a new generation of waveguide SIS mixers with very broad RF and IF bandwidths. Our initial design consists of a double-sideband mixer targeted for the 180- 300 GHz band that uses a single SIS junction excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output band, limited by the MMIC low-noise IF preamplifier, is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss is predicted to be no more than 1-2 dB (single-sideband) with mixer noise temperatures across the band within 10 Kelvin of the quantum limit. The single-sideband receiver noise temperature goal is 70 Kelvin. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and a demonstration on the CSO should occur in the spring of 2003.

  13. A Wide-Bandwidth, Low-Noise SIS Receiver Design for Millimeter and Submillimeter Wavelengths

    NASA Technical Reports Server (NTRS)

    Sumner, Matthew; Blain, Andrew; Harris, Andrew; Hu, Robert; LeDuc, Henry G.; Miller, David; Rice, Frank; Weinreb, Sander; Zmuidzinas, Jonas

    2004-01-01

    In principle, millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We are applying modem design tools, such as 3D electromagnetic simulators and Caltech's SuperMix SIS analysis package, to develop a new generation of waveguide SIS mixers with very broad RF and IF bandwidths. Our initial design consists of a double-sideband mixer targeted for the 180- 300 GHz band that uses a single SIS junction excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output band, limited by the MMIC low-noise IF preamplifier, is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss is predicted to be no more than 1-2 dB (single-sideband) with mixer noise temperatures across the band within 10 Kelvin of the quantum limit. The single-sideband receiver noise temperature goal is 70 Kelvin. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and a demonstration on the CSO should occur in the spring of 2003.

  14. Non-destructive single-pass low-noise detection of ions in a beamline.

    PubMed

    Schmidt, Stefan; Murböck, Tobias; Andelkovic, Zoran; Birkl, Gerhard; Nörtershäuser, Wilfried; Stahl, Stefan; Vogel, Manuel

    2015-11-01

    We have conceived, built, and operated a device for the non-destructive single-pass detection of charged particles in a beamline. The detector is based on the non-resonant pick-up and subsequent low-noise amplification of the image charges induced in a cylindrical electrode surrounding the particles' beam path. The first stage of the amplification electronics is designed to be operated from room temperature down to liquid helium temperature. The device represents a non-destructive charge counter as well as a sensitive timing circuit. We present the concept and design details of the device. We have characterized its performance and show measurements with low-energy highly charged ions (such as Ar(13+)) passing through one of the electrodes of a cylindrical Penning trap. This work demonstrates a novel approach of non-destructive, low noise detection of charged particles which is, depending on the bunch structure, suitable, e.g., for ion traps, low-energy beamlines or accelerator transfer sections.

  15. A general approach to low noise readout of terahertz imaging arrays

    NASA Astrophysics Data System (ADS)

    Chisum, Jonathan D.; Grossman, Erich N.; Popović, Zoya

    2011-06-01

    This article describes the theory and design of an ultra-low noise electronic readout circuit for use with room temperature video-rate terahertz imaging arrays. First, the noise characteristics of various imaging detectors, including low resistance bolometers and high resistance diodes are discussed. Theoretical approaches to white and 1/f noise mitigation are examined, and a corresponding low-noise readout circuit is designed, built, and tested. It is shown that the circuit is capable of achieving detector limited noise performance for use in room temperature terahertz imaging systems. A thorough noise analysis of the circuit provides the necessary information for applying the readout circuit to any type of imaging detector, and more generally, any measurement of small signals from various source impedances in the presence of white and 1/f noise. W-band measurements of an 8-element, high-resistance detector array, and a 32-element, low-resistance detector array demonstrate the usefulness of the readout circuit. Finally, recommended circuit configurations for various detectors in the literature are provided, with theoretical performance metrics summarized.

  16. Scalp EEG acquisition in a low-noise environment: a quantitative assessment.

    PubMed

    Zandi, Ali Shahidi; Dumont, Guy A; Yedlin, Matthew J; Lapeyrie, Philippe; Sudre, Christophe; Gaffet, Stéphane

    2011-08-01

    This pilot study investigates effects of an ultra shielded capsule at the low-noise underground laboratory (LSBB), Rustrel, France, when used to acquire scalp electroencephalogram (EEG). Analysis of EEG recordings from three volunteers confirms that clean EEG signals can be acquired in the LSBB capsule without the need for notch filtering. In addition, using different setups for acquiring EEG in the capsule, statistical analysis of power spectral densities based on a geodesic distance measure reveals that the laptop computer and patient module do not introduce any noise on recorded signals. Moreover, the current study shows that the backward counting task as a mental activity can be better detected using the EEG acquired in the capsule due to the higher level of â-band activities. The counting-relaxed â-band energy ratio is calculated using the S transform and compared between the hospital and capsule, revealing significantly higher values in the capsule (p < 0.05). Exploring the relative â-band energy (ratio of â-band energy to that of 0-12 Hz in counting state) reveals that the average of this measure is higher in the capsule for all subjects. Those results demonstrate the potential of the LSBB capsule for novel EEG studies, including establishing novel low-noise EEG benchmarks.

  17. Amplifiers of free-space terahertz radiation

    DOE PAGES

    Kao, Tsung -Yu; Reno, John L.; Hu, Qing

    2017-07-20

    Here, amplifiers of free-space radiation are quite useful, especially in spectral ranges where the radiation is weak and sensitive detectors are hard to come by. A preamplification of the said weak radiation signal will significantly boost the S/N ratio in remote sensing and imaging applications. This is especially true in the terahertz (THz) range where the radiation signal is often weak and sensitive detectors require the cooling of liquid helium. Although quantum cascade structures are promising for providing amplification in the terahertz band from 2 to 5 THz, a THz amplifier has been demonstrated in an integrated form, in whichmore » the source is in close proximity to the amplifier, which will not be suitable for the aforementioned applications. Here we demonstrate what we believe is a novel approach to achieve significant amplification of free-space THz radiation using an array of short-cavity, surface-emitting THz quantum cascade lasers operating marginally below the lasing threshold as a Fabry–Perot amplifier. This free-space “slow light” amplifier provides 7.5 dB(×5.6) overall gain at ~3.1 THz. The proposed devices are suitable for low-noise pre-amplifiers in heterodyne detection systems and for THz imaging systems. With the sub-wavelength pixel size of the array, the reflective amplifier can also be categorized as active metasurface, with the ability to amplify or absorb specific frequency components of the input THz signal.« less

  18. A CMOS detection chip for amperometric sensors with chopper stabilized incremental ΔΣ ADC

    NASA Astrophysics Data System (ADS)

    Min, Chen; Yuntao, Liu; Jingbo, Xiao; Jie, Chen

    2016-06-01

    This paper presents a low noise complimentary metal-oxide-semiconductor (CMOS) detection chip for amperometric electrochemical sensors. In order to effectively remove the input offset of the cascaded integrators and the low frequency noise in the modulator, a novel offset cancellation chopping scheme was proposed in the Incremental ΔΣ analog to digital converter (IADC). A novel low power potentiostat was employed in this chip to provide the biasing voltage for the sensor while mirroring the sensor current out for detection. The chip communicates with FPGA through standard built in I2C interface and SPI bus. Fabricated in 0.18-μm CMOS process, this chip detects current signal with high accuracy and high linearity. A prototype microsystem was produced to verify the detection chip performance with current input as well as micro-sensors. Project supported by the State Key Development Program for Basic Research of China (No. 2015CB352100).

  19. Regenerative switching CMOS system

    DOEpatents

    Welch, James D.

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  20. Regenerative switching CMOS system

    DOEpatents

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  1. IR CMOS: near infrared enhanced digital imaging (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Pralle, Martin U.; Carey, James E.; Joy, Thomas; Vineis, Chris J.; Palsule, Chintamani

    2015-08-01

    SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx's proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon's native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed. Demonstrated performance characteristics: Pixel size : 5.6 and 10 um Array size: 720P/1.3Mpix Frame rate: 60 Hz Read noise: 2 ele/pixel Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm) Daytime imaging: color (Bayer pattern) Nighttime imaging: moonless starlight conditions 1064nm laser imaging: daytime imaging out to 2Km

  2. CMOS image sensor with contour enhancement

    NASA Astrophysics Data System (ADS)

    Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

    2010-10-01

    Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

  3. Fully depleted CMOS pixel sensor development and potential applications

    SciTech Connect

    Baudot, J.; Kachel, M.

    2015-07-01

    low noise figure. Especially, an energy resolution of about 400 eV for 5 keV X-rays was obtained for single pixels. The prototypes have then been exposed to gradually increased fluences of neutrons, from 10{sup 13} to 5x10{sup 14} neq/cm{sup 2}. Again laboratory tests allowed to evaluate the signal over noise persistence on the different pixels implemented. Currently our development mostly targets the detection of soft X-rays, with the ambition to develop a pixel sensor matching counting rates as affordable with hybrid pixel sensors, but with an extended sensitivity to low energy and finer pixel about 25 x 25 μm{sup 2}. The original readout architecture proposed relies on a two tiers chip. The first tier consists of a sensor with a modest dynamic in order to insure low noise performances required by sensitivity. The interconnected second tier chip enhances the read-out speed by introducing massive parallelization. Performances reachable with this strategy combining counting and integration will be detailed. (authors)

  4. Analysis of a dc SQUID readout scheme with voltage feedback circuit and low-noise preamplifier

    NASA Astrophysics Data System (ADS)

    Zeng, Jia; Zhang, Yi; Schmelz, Matthias; Mück, Michael; Krause, Hans-Joachim; Braginski, Alex I.; Lee, Yong-Ho; Stolz, Ronny; Kong, Xiangyan; Xie, Xiaoming; Meyer, Hans-Georg; Offenhäusser, Andreas; Jiang, Mianheng

    2014-08-01

    We analyzed the dc SQUID with voltage feedback circuit (VFC) and a low-noise room-temperature preamplifier to evaluate the feasibility of a low-noise SQUID direct-coupled readout scheme (DRS), possibly eliminating the need for a two-stage scheme employing a SQUID preamplifier. The passive VFC, connected in parallel to the SQUID, consists of a resistor Rs in series with an inductor L s. This inductor is coupled to the SQUID by a mutual inductance Ms. The purpose of the VFC is to increase the SQUID’s flux-to-voltage transfer coefficient ∂V/∂Φ, thus reducing the preamplifier noise contribution δΦpreamp. However, at the same time, VFC introduces the thermal noise of Rs, δΦR, which may not be negligible. Generally, the noise of the readout scheme, δΦreadout, may thus include both δΦpreamp and δΦR, i.e., δΦreadout2 = δΦpreamp2 + δΦR2. To characterize the SQUID operation with VFC we introduced two dimensionless parameters, r = Rs/Rd and Δ = (M s/Mdyn) - (Rs/R d), where Rd and Mdyn = 1/(∂i/∂Φ) are dynamic properties of the SQUID itself. For assumed intrinsic SQUID parameters, we then numerically analyzed the dependence of δΦreadout noise components on r and Δ to determine their suitable ranges and the minimum of δΦreadout. To verify our analysis, we experimentally characterized, in liquid helium, three niobium SQUIDs with VFC, having suitably chosen r and Δ. The measured SQUID system flux noise was on the order of 1 μΦ0/√Hz, comparable to the intrinsic noise of the SQUID itself. The deduced equivalent voltage noise was comparable to that of a SQUID preamplifier in the two-stage readout. Simple single-stage ultra-low-noise SQUID DRS readout was thus demonstrated.

  5. Novel Ferroelectric CMOS Circuits as a Nonvolatile Logic

    NASA Astrophysics Data System (ADS)

    Takahashi, M.; Horiuchi, T.; Li, Q.-H.; Wang, S.; Yun, K. Y.; Sakai, S.

    2008-03-01

    We propose a novel and promising nonvolatile-logic circuit constructed by p channel type (Pch) and n channel type (Nch) ferroelectric gate field effect transistors (FeFETs), which we named a ferroelectric CMOS (FeCMOS) circuit. The circuit works as both logic and memory. We fabricated a NOT logic FeCMOS device which have Pt metal gates and gate oxides of ferroelectric SrBi2Ta2O9 (SBT) and high-k HfAlO on Si. Key technology was adjusting threshold voltages of the FeFETs as well as preparing those of high quality. We demonstrate basic operations of the NOT-logic response, memory writing, holding and non-destructive reading. The memory writing is done by amplifying the input node voltage to a higher level when the node was logically high and to a lower one when it was logically low just before the writing operation. The data retention was also measured. The retained high and low voltages were almost unchanged for 1.2 days. The idea of this FeCMOS will enhance flexibility of circuit designing by merging logic and memory functions. This work was partially supported by NEDO.

  6. Analysis of pixel circuits in CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Mei, Zou; Chen, Nan; Yao, Li-bin

    2015-04-01

    CMOS image sensors (CIS) have lower power consumption, lower cost and smaller size than CCD image sensors. However, generally CCDs have higher performance than CIS mainly due to lower noise. The pixel circuit used in CIS is the first part of the signal processing circuit and connected to photodiode directly, so its performance will greatly affect the CIS or even the whole imaging system. To achieve high performance, CMOS image sensors need advanced pixel circuits. There are many pixel circuits used in CIS, such as passive pixel sensor (PPS), 3T and 4T active pixel sensor (APS), capacitive transimpedance amplifier (CTIA), and passive pixel sensor (PPS). At first, the main performance parameters of each pixel structure including the noise, injection efficiency, sensitivity, power consumption, and stability of bias voltage are analyzed. Through the theoretical analysis of those pixel circuits, it is concluded that CTIA pixel circuit has good noise performance, high injection efficiency, stable photodiode bias, and high sensitivity with small integrator capacitor. Furthermore, the APS and CTIA pixel circuits are simulated in a standard 0.18-μm CMOS process and using a n-well/p-sub photodiode by SPICE and the simulation result confirms the theoretical analysis result. It shows the possibility that CMOS image sensors can be extended to a wide range of applications requiring high performance.

  7. NV-CMOS HD camera for day/night imaging

    NASA Astrophysics Data System (ADS)

    Vogelsong, T.; Tower, J.; Sudol, Thomas; Senko, T.; Chodelka, D.

    2014-06-01

    SRI International (SRI) has developed a new multi-purpose day/night video camera with low-light imaging performance comparable to an image intensifier, while offering the size, weight, ruggedness, and cost advantages enabled by the use of SRI's NV-CMOS HD digital image sensor chip. The digital video output is ideal for image enhancement, sharing with others through networking, video capture for data analysis, or fusion with thermal cameras. The camera provides Camera Link output with HD/WUXGA resolution of 1920 x 1200 pixels operating at 60 Hz. Windowing to smaller sizes enables operation at higher frame rates. High sensitivity is achieved through use of backside illumination, providing high Quantum Efficiency (QE) across the visible and near infrared (NIR) bands (peak QE <90%), as well as projected low noise (<2h+) readout. Power consumption is minimized in the camera, which operates from a single 5V supply. The NVCMOS HD camera provides a substantial reduction in size, weight, and power (SWaP) , ideal for SWaP-constrained day/night imaging platforms such as UAVs, ground vehicles, fixed mount surveillance, and may be reconfigured for mobile soldier operations such as night vision goggles and weapon sights. In addition the camera with the NV-CMOS HD imager is suitable for high performance digital cinematography/broadcast systems, biofluorescence/microscopy imaging, day/night security and surveillance, and other high-end applications which require HD video imaging with high sensitivity and wide dynamic range. The camera comes with an array of lens mounts including C-mount and F-mount. The latest test data from the NV-CMOS HD camera will be presented.

  8. Low-Noise High-Performance Current Controllers for Quantum Cascade Lasers

    SciTech Connect

    Taubman, Matthew S.

    2011-06-01

    Quantum cascade lasers have ushered in a new era of enhanced capability for chemical sensing. The higher current and voltage demands of these devices over their laser diode counterparts has also ushered in the demand for more capable drive electronics. The current-sensitivity and high frequency response of these devices has continued the desire for low noise, stability and agility enjoyed by the laser diode community for many years. This article addresses the issue of maintaining these characteristics at the currents and voltages required, and presents example performance of current controllers developed by the author at Pacific Northwest National Laboratory, achieving output currents up to two amperes and compliance voltages of 15 volts, with noise levels close to the Johnson noise of the internal resistors, typically a few nA/rt-Hz. Full current depth rapid modulation up to 100 kHz is also demonstrated.

  9. Low-Noise Submillimeter-Wave NbTiN Superconducting Tunnel Junction Mixers

    NASA Technical Reports Server (NTRS)

    Kawamura, J.; Chen, J.; Miller, D.; Kooi, J.; Zmuidzinas, J.; Bumble, B.; LeDuc, H. G.; Stern, J. A.

    1999-01-01

    We have developed a low-noise 850 GHz superconductor-insulator-superconductor (SIS) quasi-particle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of T(sub RX) = 260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2(delta)/h is approximately 1.2THz.

  10. Ultra-low noise TES bolometer arrays for SAFARI instrument on SPICA

    NASA Astrophysics Data System (ADS)

    Khosropanah, P.; Suzuki, T.; Ridder, M. L.; Hijmering, R. A.; Akamatsu, H.; Gottardi, L.; van der Kuur, J.; Gao, J. R.; Jackson, B. D.

    2016-07-01

    SRON is developing ultra-low noise Transition Edge Sensors (TESs) based on a superconducting Ti/Au bilayer on a suspended SiN island with SiN legs for the SAFARI instrument aboard the SPICA mission. We successfully fabricated TESs with very narrow (0.5-0.7 μm) and thin (0.25 μm) SiN legs on different sizes of SiN islands using deep reactiveion etching process. The pixel size is 840x840 μm2 and there are variety of designs with and without optical absorbers. For TESs without absorbers, we measured electrical NEPs as low as <1x10-19 W/√Hz with response time of 0.3 ms and reached the phonon noise limit. Using TESs with absorbers, we quantified the darkness of our setup and confirmed a photon noise level of 2x10-19 W/√Hz.

  11. Fabrication of Low-Noise TES Arrays for the SAFARI Instrument on SPICA

    NASA Astrophysics Data System (ADS)

    Ridder, M. L.; Khosropanah, P.; Hijmering, R. A.; Suzuki, T.; Bruijn, M. P.; Hoevers, H. F. C.; Gao, J. R.; Zuiddam, M. R.

    2016-07-01

    Ultra-low-noise transition edge sensors (TES) with noise equivalent power lower than 2 × 10^{-19} W/Hz^{1/2 } have been fabricated by SRON, which meet the sensitivity requirements for the far-infrared SAFARI instrument on space infrared telescope for cosmology and astrophysics. Our TES detector is based on a titanium/gold (Ti/Au) thermistor on a silicon nitride (SiN) island. The island is thermally linked with SiN legs to a silicon support structure at the bath temperature. The SiN legs are very thin (250 nm), narrow (500 nm), and long (above 300 {\\upmu } m); these dimensions are needed in leg-isolated bolometers to achieve the required level of sensitivity. In this paper, we describe the latest fabrication process for our TES bolometers with improved sensitivity.

  12. A bootstrapped, low-noise, and high-gain photodetector for shot noise measurement

    SciTech Connect

    Zhou, Haijun; Yang, Wenhai; Li, Zhixiu; Li, Xuefeng; Zheng, Yaohui

    2014-01-15

    We presented a low-noise, high-gain photodetector based on the bootstrap structure and the L-C (inductance and capacitance) combination. Electronic characteristics of the photodetector, including electronic noise, gain and frequency response, and dynamic range, were verified through a single-frequency Nd:YVO{sub 4} laser at 1064 nm with coherent output. The measured shot noise of 50 μW laser was 13 dB above the electronic noise at the analysis frequency of 2 MHz, and 10 dB at 3 MHz. And a maximum clearance of 28 dB at 2 MHz was achieved when 1.52 mW laser was illuminated. In addition, the photodetector showed excellent linearities for both DC and AC amplifications in the laser power range between 12.5 μW and 1.52 mW.

  13. Design and Stress Analysis of Low-Noise Adjusted Bearing Contact Spiral Bevel Gears

    NASA Technical Reports Server (NTRS)

    Litvin, Faydor L.; Fuentes, Alfonso; Mullins, Baxter R.; Woods, Ron

    2002-01-01

    An integrated computerized approach for design and stress analysis of low-noise spiral bevel gear drives with adjusted bearing contact has been developed. The computation procedure is an iterative process, requiring four separate steps that provide: (a) a parabolic function of transmission errors that is able to reduce the effect of errors of alignment, and (b) reduction of the shift of bearing contact caused by misalignment. Application of finite element analysis permits the contact and bending stresses to be determined and investigate the formation of the bearing contact. The design of finite element models and boundary conditions is automated and does not require an intermediate CAD computer program. A commercially available finite element analysis computer program with contact capability was used to conduct the stress analysis. The theory developed is illustrated with numerical examples.

  14. A low-noise large dynamic-range readout suitable for laser spectroscopy with photodiodes

    NASA Astrophysics Data System (ADS)

    Pullia, A.; Sanvito, T.; Potenza, M. A.; Zocca, F.

    2012-10-01

    An original low-noise large dynamic-range readout system for optical light spectroscopy with PIN diodes is presented. The front-end circuit is equipped with a smart device for automatic cancellation of the large dc offset brought about by the photodiode current. This device sinks away the exact amount of dc current from the preamplifier input, yielding auto zeroing of the output-voltage offset, while introducing the minimum electronic noise possible. As a result the measurement dynamic-range is maximized. Moreover, an auxiliary inspection point is provided which precisely tracks the dc component of the photodiode current. This output allows for precise beam alignment and may also be used for diagnostic purposes. The excellent gain stability and linearity make the circuit perfectly suited for optical-light pulse spectroscopy. Applications include particle sizing in the 100 nm range, two-dimensional characterization of semiconductor detectors, ultra-precise characterization of laser beam stability, confocal microscopy.

  15. Low-dimensional phononic structures for ultra-low-noise transition edge sensors

    NASA Astrophysics Data System (ADS)

    Withington, S.; Goldie, D. J.

    2012-09-01

    Understanding the thermal behaviour of low-dimensional dielectric support structures patterned in <500 nm dielectric membranes is an essential part of developing ultra-low-noise Transition Edge Sensors for space science. To advance the technology further, we wish to produce phononic components that minimize low-temperature (< 500 mK) thermal conductance, heat capacity, and thermal fluctuation noise, and thereby maximize sensitivity, saturation power, and optical packing. We describe a technique for simulating the low-temperature thermal behaviour of mesoscopic structures. Ballistic, elastic diffusive, localized and inelastic diffusive transport are included, and the respective scattering lengths can be comparable with the scale sizes of the patterned features. The technique computes the average fluxes of components having statistically characterized microstructure, the spread in behaviour of notionally identical devices, and the RMS thermal fluctuation noise.

  16. Low-noise humidity controller for imaging water mediated processes in atomic force microscopy

    SciTech Connect

    Gaponenko, I. Gamperle, L.; Herberg, K.; Muller, S. C.; Paruch, P.

    2016-06-15

    We demonstrate the construction of a novel low-noise continuous flow humidity controller and its integration with a commercial variable-temperature atomic force microscope fluid cell, allowing precise control of humidity and temperature at the sample during nanoscale measurements. Based on wet and dry gas mixing, the design allows a high mechanical stability to be achieved by means of an ultrasonic atomiser for the generation of water-saturated gas, improving upon previous bubbler-based architectures. Water content in the flow is measured both at the inflow and outflow of the fluid cell, enabling the monitoring of water condensation and icing, and allowing controlled variation of the sample temperature independently of the humidity. To benchmark the performance of the controller, the results of detailed noise studies and time-based imaging of the formation of ice layers on highly oriented pyrolytic graphite are shown.

  17. Quantum witness of high-speed low-noise single-photon detection.

    PubMed

    Zhao, Lin; Huang, Kun; Liang, Yan; Chen, Jie; Shi, Xueshun; Wu, E; Zeng, Heping

    2015-12-14

    We demonstrate high-speed and low-noise near-infrared single-photon detection by using a capacitance balancing circuit to achieve a high spike noise suppression for an InGaAs/InP avalanche photodiode. The single-photon detector could operate at a tunable gate repetition rate from 10 to 60 MHz. A peak detection efficiency of 34% has been achieved with a dark count rate of 9 × 10⁻³ per gate when the detection window was set to 1 ns. Additionally, quantum detector tomography has also been performed at 60 MHz of repetition rate and for the detection window of 1 ns, enabling to witness the quantum features of the detector with the help of a negative Wigner function. By varying the bias voltage of the detector, we further demonstrated a transition from the full-quantum to semi-classical regime.

  18. Computerized design and generation of low-noise helical gears with modified surface topology

    NASA Astrophysics Data System (ADS)

    Litvin, F. L.; Chen, N. X.; Lu, J.; Handschuh, R. F.

    1994-08-01

    An approach for design and generation of low-noise helical gears with localized bearing contact is proposed. The approach is applied to double circular arc helical gears and modified involute helical gears. The reduction of noise and vibration is achieved by application of a predesigned parabolic function of transmission errors that is able to absorb a discontinuous linear function of transmission errors caused by misalignment. The localization of the bearing contact is achieved by the mismatch of pinion-gear tooth surfaces. Computerized simulation of meshing and contact of the designed gears demonstrated that the proposed approach will produce a pair of gears that has a parabolic transmission error function even when misalignment is present. Numerical examples for illustration of the developed approach are given.

  19. Using the Moon As A Low-Noise Seismic Detector For Strange Quark Nuggets

    NASA Technical Reports Server (NTRS)

    Banerdt, W. Bruce; Chui, Talso; Griggs, Cornelius E.; Herrin, Eugene T.; Nakamura, Yosio; Paik, Ho Jung; Penanen, Konstantin; Rosenbaum, Doris; Teplitz, Vigdor L.; Young, Joseph

    2006-01-01

    Strange quark matter made of up, down and strange quarks has been postulated by Witten [1]. Strange quark matter would be nearly charge neutral and would have density of nuclear matter (10(exp 14) gm/cu cm). Witten also suggested that nuggets of strange quark matter, or strange quark nuggets (SQNs), could have formed shortly after the Big Bang, and that they would be viable candidates for cold dark matter. As suggested by de Rujula and Glashow [2], an SQN may pass through a celestial body releasing detectable seismic energy along a straight line. The Moon, being much quieter seismically than the Earth, would be a favorable place to search for such events. We review previous searches for SQNs to illustrate the parameter space explored by using the Moon as a low-noise detector of SQNs. We also discuss possible detection schemes using a single seismometer, and using an International Lunar Seismic Network.

  20. An extremely low-noise heralded single-photon source: A breakthrough for quantum technologies

    NASA Astrophysics Data System (ADS)

    Brida, G.; Degiovanni, I. P.; Genovese, M.; Piacentini, F.; Traina, P.; Della Frera, A.; Tosi, A.; Bahgat Shehata, A.; Scarcella, C.; Gulinatti, A.; Ghioni, M.; Polyakov, S. V.; Migdall, A.; Giudice, A.

    2012-11-01

    Low noise single-photon sources are a critical element for quantum technologies. We present a heralded single-photon source with an extremely low level of residual background photons, by implementing low-jitter detectors and electronics and a fast custom-made pulse generator controlling an optical shutter (a LiNbO3 waveguide optical switch) on the output of the source. This source has a second-order autocorrelation g(2)(0)=0.005(7), and an output noise factor (defined as the ratio of the number of noise photons to total photons at the source output channel) of 0.25(1)%. These are the best performance characteristics reported to date.

  1. An ultra-low noise, high-voltage piezo-driver

    NASA Astrophysics Data System (ADS)

    Pisenti, N. C.; Restelli, A.; Reschovsky, B. J.; Barker, D. S.; Campbell, G. K.

    2016-12-01

    We present an ultra-low noise, high-voltage driver suited for use with piezoelectric actuators and other low-current applications. The architecture uses a flyback switching regulator to generate up to 250 V in our current design, with an output of 1 kV or more possible with small modifications. A high slew-rate op-amp suppresses the residual switching noise, yielding a total root-mean-square noise of ≈100 μV (1 Hz-100 kHz). A low-voltage (±10 V), high bandwidth signal can be summed with unity gain directly onto the output, making the driver well-suited for closed-loop feedback applications. Digital control enables both repeatable setpoints and sophisticated control logic, and the circuit consumes less than 150 mA at ±15 V.

  2. Low-noise integrated balanced SIS mixer for 787-950 GHz

    NASA Astrophysics Data System (ADS)

    Fujii, Yasunori; Kojima, Takafumi; Gonzalez, Alvaro; Asayama, Shin'ichiro; Kroug, Matthias; Kaneko, Keiko; Ogawa, Hideo; Uzawa, Yoshinori

    2017-02-01

    We developed a low-noise, compact, balanced superconductor-insulator-superconductor (SIS) mixer, operating in the 787-950 GHz radio frequency range. A waveguide mixer block was designed to integrate all the key components, such as a radio frequency (RF) 90° hybrid coupler, two identical SIS mixer chips, bias-tees, and an intermediate frequency power-combiner. The RF waveguide 90° hybrid coupler consists of branch lines with wide slots optimized by numerical simulation, for ease of fabrication. The balanced mixer was installed into a cartridge type receiver, originally developed for the Atacama Large Millimeter/submillimeter Array Band 10 (787-950 GHz). The receiver demonstrated double sideband noise temperatures of approximately 200 K for most of the band, without any correction for loss in front of the receiver. The local oscillator noise rejection ratio was estimated to be more than 15 dB within the measured frequency range.

  3. Low-noise humidity controller for imaging water mediated processes in atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Gaponenko, I.; Gamperle, L.; Herberg, K.; Muller, S. C.; Paruch, P.

    2016-06-01

    We demonstrate the construction of a novel low-noise continuous flow humidity controller and its integration with a commercial variable-temperature atomic force microscope fluid cell, allowing precise control of humidity and temperature at the sample during nanoscale measurements. Based on wet and dry gas mixing, the design allows a high mechanical stability to be achieved by means of an ultrasonic atomiser for the generation of water-saturated gas, improving upon previous bubbler-based architectures. Water content in the flow is measured both at the inflow and outflow of the fluid cell, enabling the monitoring of water condensation and icing, and allowing controlled variation of the sample temperature independently of the humidity. To benchmark the performance of the controller, the results of detailed noise studies and time-based imaging of the formation of ice layers on highly oriented pyrolytic graphite are shown.

  4. Computerized Design and Generation of Low-noise Helical Gears with Modified Surface Topology

    NASA Technical Reports Server (NTRS)

    Litvin, F. L.; Chen, N. X.; Lu, J.; Handschuh, R. F.

    1994-01-01

    An approach for design and generation of low-noise helical gears with localized bearing contact is proposed. The approach is applied to double circular arc helical gears and modified involute helical gears. The reduction of noise and vibration is achieved by application of a predesigned parabolic function of transmission errors that is able to absorb a discontinuous linear function of transmission errors caused by misalignment. The localization of the bearing contact is achieved by the mismatch of pinion-gear tooth surfaces. Computerized simulation of meshing and contact of the designed gears demonstrated that the proposed approach will produce a pair of gears that has a parabolic transmission error function even when misalignment is present. Numerical examples for illustration of the developed approach are given.

  5. Low-noise monolithic bipolar front-end for silicon drift detectors

    NASA Astrophysics Data System (ADS)

    Dabrowski, W.; Bialas, W.; Bonazzola, G.; Bonvicini, W.; Casati, L.; Ceretto, F.; Giubellino, P.; Prest, M.; Riccati, L.; Zampa, N.

    1999-01-01

    A very low noise, 32-channel preamplifier/shaper chip has been designed for the analogue readout of silicon detectors. The circuit has been optimized in view of the operation of silicon drift detectors, which have very low capacitance and produce gaussian signals of σ of few tens of ns. The chip (OLA) has been designed and manufactured using the SHPi full-custom bipolar process by Tektronix. Each channel is composed by a preamplifier, a shaper and a symmetrical line driver, which allows to drive either a positive and a negative single ended output separately on 50 Ω impedance or a differential twisted pair. The intrinsic peaking time of the circuit is ˜60 ns, and the noise is below 250 electrons at zero input load capacitance. The power consumption is 2 mW/channel, mostly due to the output driver.

  6. A bootstrapped, low-noise, and high-gain photodetector for shot noise measurement

    NASA Astrophysics Data System (ADS)

    Zhou, Haijun; Yang, Wenhai; Li, Zhixiu; Li, Xuefeng; Zheng, Yaohui

    2014-01-01

    We presented a low-noise, high-gain photodetector based on the bootstrap structure and the L-C (inductance and capacitance) combination. Electronic characteristics of the photodetector, including electronic noise, gain and frequency response, and dynamic range, were verified through a single-frequency Nd:YVO4 laser at 1064 nm with coherent output. The measured shot noise of 50 μW laser was 13 dB above the electronic noise at the analysis frequency of 2 MHz, and 10 dB at 3 MHz. And a maximum clearance of 28 dB at 2 MHz was achieved when 1.52 mW laser was illuminated. In addition, the photodetector showed excellent linearities for both DC and AC amplifications in the laser power range between 12.5 μW and 1.52 mW.

  7. A 1014 nm linearly polarized low noise narrow-linewidth single-frequency fiber laser.

    PubMed

    Mo, Shupei; Xu, Shanhui; Huang, Xiang; Zhang, Weinan; Feng, Zhouming; Chen, Dongdan; Yang, Tong; Yang, Zhongming

    2013-05-20

    We present the demonstration of a compact linearly polarized low noise narrow-linewidth single-frequency fiber laser at 1014 nm. The compact fiber laser is based on a 5-mm-long homemade Yb(3+)-doped phosphate fiber. Over 164 mW stable continuous-wave single transverse and longitudinal mode lasing at 1014 nm has been achieved. The measured relative intensity noise is less than -135 dB/Hz at frequencies of over 2.5 MHz. The signal-to-noise ratio of the laser is larger than 70 dB, and the linewidth is less than 7 kHz, while the obtained linear polarization extinction ratio is higher than 30 dB.

  8. Using the Moon As A Low-Noise Seismic Detector For Strange Quark Nuggets

    NASA Technical Reports Server (NTRS)

    Banerdt, W. Bruce; Chui, Talso; Griggs, Cornelius E.; Herrin, Eugene T.; Nakamura, Yosio; Paik, Ho Jung; Penanen, Konstantin; Rosenbaum, Doris; Teplitz, Vigdor L.; Young, Joseph

    2006-01-01

    Strange quark matter made of up, down and strange quarks has been postulated by Witten [1]. Strange quark matter would be nearly charge neutral and would have density of nuclear matter (10(exp 14) gm/cu cm). Witten also suggested that nuggets of strange quark matter, or strange quark nuggets (SQNs), could have formed shortly after the Big Bang, and that they would be viable candidates for cold dark matter. As suggested by de Rujula and Glashow [2], an SQN may pass through a celestial body releasing detectable seismic energy along a straight line. The Moon, being much quieter seismically than the Earth, would be a favorable place to search for such events. We review previous searches for SQNs to illustrate the parameter space explored by using the Moon as a low-noise detector of SQNs. We also discuss possible detection schemes using a single seismometer, and using an International Lunar Seismic Network.

  9. Rapid single-flux-quantum circuits for low noise mK operation

    NASA Astrophysics Data System (ADS)

    Intiso, Samuel; Pekola, Jukka; Savin, Alexander; Devyatov, Ygor; Kidiyarova-Shevchenko, Anna

    2006-05-01

    Rapid single-flux-quantum (RSFQ) technology has been proposed as control electronics for superconducting quantum bits because of the material and working temperature compatibility. In this work, we consider practical aspects of RSFQ circuit design for low noise low power operation. At the working temperature of 20 mK and operational frequency of 2 GHz, dissipated power per junction is reduced to 25 pW by using 6 µA critical current junctions available at the Hypres and VTT low Jc fabrication process. To limit phonon temperature to 30 mK, a maximum of 40 junctions can be placed on a 5 mm × 5 mm chip. Electron temperature in resistive shunts of Josephson junctions is minimized by use of cooling fins, giving minimum electron temperatures of about 150 mK for the Hypres process and 70 mK for the VTT process.

  10. Low-Noise Operation of All-Fiber Femtosecond Cherenkov Laser

    PubMed Central

    Liu, Xiaomin; Villanueva, Guillermo E.; Lægsgaard, Jesper; Møller, Uffe; Tu, Haohua; Boppart, Stephen A.; Turchinovich, Dmitry

    2013-01-01

    We investigate the noise properties of a femtosecond all-fiber Cherenkov radiation source with emission wavelength 600 nm, based on an Yb-fiber laser and a highly nonlinear photonic crystal fiber. A relative intensity noise as low as 103 dBc/Hz, corresponding to 2.48% pulse-to-pulse fluctuation in energy, is observed at the Cherenkov radiation output power of 4.3 mW, or 150 pJ-pulse energy. This pulse-to-pulse fluctuation is at least 10.6-dB lower compared to spectrally sliced supercontinuum sources traditionally used for ultrafast fiber-based generation at visible wavelengths. Low noise makes all-fiber Cherenkov sources promising for biophotonics applications such as multiphoton microscopy, where minimum pulse-to-pulse energy fluctuation is required. We present the dependency of the noise figure on both the Cherenkov radiation output power and its spectrum. PMID:24532961

  11. Low-noise multiple watermarks technology based on complex double random phase encoding method

    NASA Astrophysics Data System (ADS)

    Zheng, Jihong; Lu, Rongwen; Sun, Liujie; Zhuang, Songlin

    2010-11-01

    Based on double random phase encoding method (DRPE), watermarking technology may provide a stable and robust method to protect the copyright of the printing. However, due to its linear character, DRPE exist the serious safety risk when it is attacked. In this paper, a complex coding method, which means adding the chaotic encryption based on logistic mapping before the DRPE coding, is provided and simulated. The results testify the complex method will provide better security protection for the watermarking. Furthermore, a low-noise multiple watermarking is studied, which means embedding multiple watermarks into one host printing and decrypt them with corresponding phase keys individually. The Digital simulation and mathematic analysis show that with the same total embedding weight factor, multiply watermarking will improve signal noise ratio (SNR) of the output printing image significantly. The complex multiply watermark method may provide a robust, stability, reliability copyright protection with higher quality printing image.

  12. Design and Stress Analysis of Low-Noise Adjusted Bearing Contact Spiral Bevel Gears

    NASA Technical Reports Server (NTRS)

    Fuentes, A.; Litvin, F. L.; Mullins, B. R.; Woods, R.; Handschuh, R. F.; Lewicki, David G.

    2002-01-01

    An integrated computerized approach for design and stress analysis of low-noise spiral bevel gear drives with adjusted bearing contact is proposed. The procedure of computations is an iterative process that requires four separate procedures and provide: (a) a parabolic function of transmission errors that is able to reduce the effect of errors of alignment on noise and vibration, and (b) reduction of the shift of bearing contact caused by misalignment. Application of finite element analysis enables us to determine the contact and bending stresses and investigate the formation of the bearing contact. The design of finite element models and boundary conditions is automated and does not require intermediate CAD computer programs for application of general purpose computer program for finite element analysis.

  13. Low noise control and wavelength shift of high-power DFB laser

    NASA Astrophysics Data System (ADS)

    Tian, Yuan; Yang, Junjie; Lai, Xui; Zhang, Shu; Chen, Jiaqi; Li, Jingxuan; Sui, Guorong

    2014-12-01

    This letter reports the low noise control and wavelength shift of a commercial fixed-wavelength high-power DFB laser emitting at 785 nm. In this control system, a novel current driving module integrated with PID temperature controller is designed to provide precise injection current and stable operating temperature. The start- up and stop characteristic of this system is improved as well, to optimize output response and extend service life of the DFB laser. Experimental results show that the optical output power can be accurately controlled in the range of 0 to 600 mW, with the stability better than 2 ‰. In addition, we could effectively control the center wavelength from 785 nm to 793 nm maintaining the linewidth less than 0.9 nm. The research will enhance the performance and extend the use of present commercial DFB laser.

  14. A high-speed and low-noise intelligent test system for infrared detectors

    NASA Astrophysics Data System (ADS)

    Jia, Tianshi; Xue, Yulong; Cui, Kun; Kong, Fansheng

    2016-11-01

    With the development of infrared focal plane technology, the scale of the detector becomes larger and larger, and the pixel noise level is lower and lower. We designed and implemented a set of infrared high-speed low noise intelligent test system based on OPENVPX standard, which is used to test the index, long term monitoring and life test of infrared detector. The system is mainly composed of main control board, image acquisition board, temperature acquisition board and the high speed back board, which has high speed image acquisition, processing, temperature monitoring and alarm function. Through testing and simulation, the results show that the system noise is less than 100uV, the dynamic range reaches 100dB, and the data throughput rate reaches 4Gbps, which can meet the requirements of the infrared detector test currently.

  15. A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

    NASA Astrophysics Data System (ADS)

    Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

    2016-07-01

    We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

  16. CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

    PubMed

    Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

    2011-04-01

    In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

  17. A low noise and high precision linear power supply with thermal foldback protection

    NASA Astrophysics Data System (ADS)

    Carniti, P.; Cassina, L.; Gotti, C.; Maino, M.; Pessina, G.

    2016-05-01

    A low noise and high precision linear power supply was designed for use in rare event search experiments with macrobolometers. The circuit accepts at the input a "noisy" dual supply voltage up to ±15 V and gives at the output precise, low noise, and stable voltages that can be set between ±3.75 V and ±12.5 V in eight 1.25 V steps. Particular care in circuit design, component selection, and proper filtering results in a noise spectral density of 50 nV / √{ Hz } at 1 Hz and 20 nV / √{ Hz } white when the output is set to ±5 V. This corresponds to 125 nV RMS (0.8 μV peak to peak) between 0.1 Hz and 10 Hz, and 240 nV RMS (1.6 μV peak to peak) between 0.1 Hz and 100 Hz. The power supply rejection ratio (PSRR) of the circuit is 100 dB at low frequency, and larger than 40 dB up to high frequency, thanks to a proper compensation design. Calibration allows to reach a precision in the absolute value of the output voltage of ±70 ppm, or ±350 μV at ±5 V, and to reduce thermal drifts below ±1 ppm/∘C in the expected operating range. The maximum peak output current is about 6 A from each output. An original foldback protection scheme was developed that dynamically limits the maximum output current to keep the temperature of the output transistors within their safe operating range. An add-on card based on an ARM Cortex-M3 microcontroller is devoted to the monitoring and control of all circuit functionalities and provides remote communication via CAN bus.

  18. The high speed low noise multi-data processing signal process circuit research of remote sensing

    NASA Astrophysics Data System (ADS)

    Su, Lei; Jiang, Haibin; Dong, Wang

    2013-08-01

    The high speed, low noise and integration characteristic are the main technology and the main development directions on the signal process circuit of the image sensor, especially in high resolution remote sensing. With these developments, the high noise limiting circuits, high speed data transfer system and the integrated design of the signal process circuit become more and more important. Therefore the requirement of the circuit system simulation is more and more important during the system design and PCB board design process. A CCD signal process circuit system which has the high speed, low noise and several selectable operate modes function was designed and certificated in this paper, during the CCD signal process circuit system design, simulation was made which include the signal integrity and the power integrity. The important devices such as FPGA and the DDR2 device were simulated, using the power integrity simulation the sensitive power planes of the FPGA on the PCB was modified to make the circuit operate more stabilize on a higher frequency. The main clock path and the high speed data path of the PCB board were simulated with the signal integrity. All the simulation works make the signal process circuit system's image's SNR value get higher and make the circuit system could operate well on higher frequency. In the board testing process, the PCB time diagrams were listed on the testing chapter and the wave's parameter meets the request. The real time diagram and the simulated result of the PCB board was listed respectively. The CCD signal process circuit system's images' SNR (Signal Noise Ratio) value, the 14bit AFE slew rate and the data transfer frequency is listed in the paper respective.

  19. Low-noise nano superconducting quantum interference device operating in Tesla magnetic fields.

    PubMed

    Schwarz, Tobias; Nagel, Joachim; Wölbing, Roman; Kemmler, Matthias; Kleiner, Reinhold; Koelle, Dieter

    2013-01-22

    Superconductivity in the cuprate YBa(2)Cu(3)O(7) (YBCO) persists up to huge magnetic fields (B) up to several tens of Teslas, and sensitive direct current (dc) superconducting quantum interference devices (SQUIDs) can be realized in epitaxially grown YBCO films by using grain boundary Josephson junctions (GBJs). Here we present the realization of high-quality YBCO nanoSQUIDs, patterned by focused ion beam milling. We demonstrate low-noise performance of such a SQUID up to B = 1 T applied parallel to the plane of the SQUID loop at the temperature T = 4.2 K. The GBJs are shunted by a thin Au layer to provide nonhysteretic current voltage characteristics, and the SQUID incorporates a 90 nm wide constriction which is used for on-chip modulation of the magnetic flux through the SQUID loop. The white flux noise of the device increases only slightly from 1.3 μΦ(0)/(Hz)(1/2) at B = 0 to 2.3 μΦ(0)/(Hz))(1/2) at 1 T. Assuming that a point-like magnetic particle with magnetization in the plane of the SQUID loop is placed directly on top of the constriction and taking into account the geometry of the SQUID, we calculate a spin sensitivity S(μ)(1/2) = 62 μ(B)/(Hz))(1/2) at B = 0 and 110 μ(B)/(Hz))(1/2) at 1 T. The demonstration of low noise of such a SQUID in Tesla fields is a decisive step toward utilizing the full potential of ultrasensitive nanoSQUIDs for direct measurements of magnetic hysteresis curves of magnetic nanoparticles and molecular magnets.

  20. The use of quartz patch pipettes for low noise single channel recording.

    PubMed Central

    Levis, R A; Rae, J L

    1993-01-01

    Quartz has a dissipation factor of approximately 10(-4), which is an order of magnitude less than that of the best glasses previously used to fabricate patch pipettes; it's dielectric constant of 3.8 is also lower than that of other glasses. On the basis of these electrical characteristics it is expected that patch pipettes pulled from quartz tubing will produce significantly less noise than pipettes made from other glasses. Our work confirms these expectations and we describe theoretical and practical aspects of the use of quartz pipettes for single channel patch voltage clamp measurements. Methods for pulling quartz pipettes with a laser-based puller and coating them with low-loss elastomers are discussed, as are precautions that are necessary to achieve low noise recordings. We have shown that quartz pipettes can be pulled from tubing with outer diameter to inner diameter ratios as large as 3 and a method of applying heavy elastomer coatings all the way to the tip of pipettes is presented. Noise sources arising from the pipette and its holder are described theoretically, and it is shown that measured noise is in good agreement with such predictions. With low noise capacitive feedback electronics, small geometry holders, and thick-walled quartz pipettes coated with low-loss elastomers we have been routinely able to achieve noise of 100 fA rms or less in a 5-kHz bandwidth with real cell patches and a pipette immersion depth of approximately 2 mm. On occasion we have achieved noise as low as 60 fA rms in this bandwidth. Images FIGURE 1 FIGURE 2 PMID:7506069