Low-power analog integrated circuits for wireless ECG acquisition systems.

PubMed

Tsai, Tsung-Heng; Hong, Jia-Hua; Wang, Liang-Hung; Lee, Shuenn-Yuh

2012-09-01

This paper presents low-power analog ICs for wireless ECG acquisition systems. Considering the power-efficient communication in the body sensor network, the required low-power analog ICs are developed for a healthcare system through miniaturization and system integration. To acquire the ECG signal, a low-power analog front-end system, including an ECG signal acquisition board, an on-chip low-pass filter, and an on-chip successive-approximation analog-to-digital converter for portable ECG detection devices is presented. A quadrature CMOS voltage-controlled oscillator and a 2.4 GHz direct-conversion transmitter with a power amplifier and upconversion mixer are also developed to transmit the ECG signal through wireless communication. In the receiver, a 2.4 GHz fully integrated CMOS RF front end with a low-noise amplifier, differential power splitter, and quadrature mixer based on current-reused folded architecture is proposed. The circuits have been implemented to meet the specifications of the IEEE 802.15.4 2.4 GHz standard. The low-power ICs of the wireless ECG acquisition systems have been fabricated using a 0.18 μm Taiwan Semiconductor Manufacturing Company (TSMC) CMOS standard process. The measured results on the human body reveal that ECG signals can be acquired effectively by the proposed low-power analog front-end ICs.

A Wireless Capsule Endoscope System With Low-Power Controlling and Processing ASIC.

PubMed

Xinkai Chen; Xiaoyu Zhang; Linwei Zhang; Xiaowen Li; Nan Qi; Hanjun Jiang; Zhihua Wang

2009-02-01

This paper presents the design of a wireless capsule endoscope system. The proposed system is mainly composed of a CMOS image sensor, a RF transceiver and a low-power controlling and processing application specific integrated circuit (ASIC). Several design challenges involving system power reduction, system miniaturization and wireless wake-up method are resolved by employing optimized system architecture, integration of an area and power efficient image compression module, a power management unit (PMU) and a novel wireless wake-up subsystem with zero standby current in the ASIC design. The ASIC has been fabricated in 0.18-mum CMOS technology with a die area of 3.4 mm * 3.3 mm. The digital baseband can work under a power supply down to 0.95 V with a power dissipation of 1.3 mW. The prototype capsule based on the ASIC and a data recorder has been developed. Test result shows that proposed system architecture with local image compression lead to an average of 45% energy reduction for transmitting an image frame.

A Low-Power All-Digital on-Chip CMOS Oscillator for a Wireless Sensor Node

PubMed Central

Sheng, Duo; Hong, Min-Rong

2016-01-01

This paper presents an all-digital low-power oscillator for reference clocks in wireless body area network (WBAN) applications. The proposed on-chip complementary metal-oxide-semiconductor (CMOS) oscillator provides low-frequency clock signals with low power consumption, high delay resolution, and low circuit complexity. The cascade-stage structure of the proposed design simultaneously achieves high resolution and a wide frequency range. The proposed hysteresis delay cell further reduces the power consumption and hardware costs by 92.4% and 70.4%, respectively, relative to conventional designs. The proposed design is implemented in a standard performance 0.18 μm CMOS process. The measured operational frequency ranged from 7 to 155 MHz, and the power consumption was improved to 79.6 μW (@7 MHz) with a 4.6 ps resolution. The proposed design can be implemented in an all-digital manner, which is highly desirable for system-level integration. PMID:27754439

A Low-Power All-Digital on-Chip CMOS Oscillator for a Wireless Sensor Node.

PubMed

Sheng, Duo; Hong, Min-Rong

2016-10-14

This paper presents an all-digital low-power oscillator for reference clocks in wireless body area network (WBAN) applications. The proposed on-chip complementary metal-oxide-semiconductor (CMOS) oscillator provides low-frequency clock signals with low power consumption, high delay resolution, and low circuit complexity. The cascade-stage structure of the proposed design simultaneously achieves high resolution and a wide frequency range. The proposed hysteresis delay cell further reduces the power consumption and hardware costs by 92.4% and 70.4%, respectively, relative to conventional designs. The proposed design is implemented in a standard performance 0.18 μm CMOS process. The measured operational frequency ranged from 7 to 155 MHz, and the power consumption was improved to 79.6 μW (@7 MHz) with a 4.6 ps resolution. The proposed design can be implemented in an all-digital manner, which is highly desirable for system-level integration.

Wireless Low-Power Integrated Basal-Body-Temperature Detection Systems Using Teeth Antennas in the MedRadio Band.

PubMed

Yang, Chin-Lung; Zheng, Gou-Tsun

2015-11-20

This study proposes using wireless low power thermal sensors for basal-body-temperature detection using frequency modulated telemetry devices. A long-term monitoring sensor requires low-power circuits including a sampling circuit and oscillator. Moreover, temperature compensated technologies are necessary because the modulated frequency might have additional frequency deviations caused by the varying temperature. The temperature compensated oscillator is composed of a ring oscillator and a controlled-steering current source with temperature compensation, so the output frequency of the oscillator does not drift with temperature variations. The chip is fabricated in a standard Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm complementary metal oxide semiconductor (CMOS) process, and the chip area is 0.9 mm². The power consumption of the sampling amplifier is 128 µW. The power consumption of the voltage controlled oscillator (VCO) core is less than 40 µW, and the output is -3.04 dBm with a buffer stage. The output voltage of the bandgap reference circuit is 1 V. For temperature measurements, the maximum error is 0.18 °C with a standard deviation of ±0.061 °C, which is superior to the required specification of 0.1 °C.

A wireless narrowband imaging chip for capsule endoscope.

PubMed

Lan-Rong Dung; Yin-Yi Wu

2010-12-01

This paper presents a dual-mode capsule gastrointestinal endoscope device. An endoscope combined with a narrowband image (NBI), has been shown to be a superior diagnostic tool for early stage tissue neoplasms detection. Nevertheless, a wireless capsule endoscope with the narrowband imaging technology has not been presented in the market up to now. The narrowband image acquisition and power dissipation reduction are the main challenges of NBI capsule endoscope. In this paper, we present the first narrowband imaging capsule endoscope that can assist clinical doctors to effectively diagnose early gastrointestinal cancers, profited from our dedicated dual-mode complementary metal-oxide semiconductor (CMOS) sensor. The dedicated dual-mode CMOS sensor can offer white-light and narrowband images. Implementation results show that the proposed 512 × 512 CMOS sensor consumes only 2 mA at a 3-V power supply. The average current of the NBI capsule with an 8-Mb/s RF transmitter is nearly 7 ~ 8 mA that can continuously work for 6 ~ 8 h with two 1.5-V 80-mAh button batteries while the frame rate is 2 fps. Experimental results on backside mucosa of a human tongue and pig's small intestine showed that the wireless NBI capsule endoscope can significantly improve the image quality, compared with a commercial-of-the-shelf capsule endoscope for gastrointestinal tract diagnosis.

A Two-Stage Reconstruction Processor for Human Detection in Compressive Sensing CMOS Radar.

PubMed

Tsao, Kuei-Chi; Lee, Ling; Chu, Ta-Shun; Huang, Yuan-Hao

2018-04-05

Complementary metal-oxide-semiconductor (CMOS) radar has recently gained much research attraction because small and low-power CMOS devices are very suitable for deploying sensing nodes in a low-power wireless sensing system. This study focuses on the signal processing of a wireless CMOS impulse radar system that can detect humans and objects in the home-care internet-of-things sensing system. The challenges of low-power CMOS radar systems are the weakness of human signals and the high computational complexity of the target detection algorithm. The compressive sensing-based detection algorithm can relax the computational costs by avoiding the utilization of matched filters and reducing the analog-to-digital converter bandwidth requirement. The orthogonal matching pursuit (OMP) is one of the popular signal reconstruction algorithms for compressive sensing radar; however, the complexity is still very high because the high resolution of human respiration leads to high-dimension signal reconstruction. Thus, this paper proposes a two-stage reconstruction algorithm for compressive sensing radar. The proposed algorithm not only has lower complexity than the OMP algorithm by 75% but also achieves better positioning performance than the OMP algorithm especially in noisy environments. This study also designed and implemented the algorithm by using Vertex-7 FPGA chip (Xilinx, San Jose, CA, USA). The proposed reconstruction processor can support the 256 × 13 real-time radar image display with a throughput of 28.2 frames per second.

ZnO on nickel RF micromechanical resonators for monolithic wireless communication applications

NASA Astrophysics Data System (ADS)

Wei, Mian; Avila, Adrian; Rivera, Ivan; Baghelani, Masoud; Wang, Jing

2017-05-01

On-chip integrability of high-Q RF passives alongside CMOS transistors is crucial for the implementation of monolithic radio transceivers. One of the most significant bottlenecks in back-end-of-line (BEoL) integration of MEMS devices on CMOS processed wafers is their relatively low thermal budget, which is less than that required for typical MEMS material deposition processes. This paper investigates electroplated nickel as a structural material for piezoelectrically-transduced resonators to demonstrate ZnO-on-nickel resonators with a CMOS-compatible low temperature process for the first time. Aside from the obvious manufacturing cost benefit, electroplated nickel is a reasonable substitute for polycrystalline or single crystal silicon and thin-film microcrystalline diamond device layers, while realizing decent acoustic velocity and moderate Q. Electroplated nickel has been already adopted by MEMSCAP, a multi-user MEMS process foundry, in its MetalMUMPs process. Furthermore, it is observed that a localized annealing process through Joule heating can be exploited to significantly improve the effective mechanical quality factor for the ZnO-on-nickel resonators, which is still lower than the reported AlN resonators. This work demonstrates ZnO-on-nickel piezoelectrically-actuated MEMS resonators and resonator arrays by using an IC compatible low temperature process. There is room for performance improvement by lowering the acoustic energy losses in the ZnO and nickel layers.

A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

PubMed Central

Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

2015-01-01

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of −20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation. PMID:25806868

A CMOS pressure sensor tag chip for passive wireless applications.

PubMed

Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

2015-03-23

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of -20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

Impulse radio ultra wideband wireless transmission of dopamine concentration levels recorded by fast-scan cyclic voltammetry.

PubMed

Ebrazeh, Ali; Bozorgzadeh, Bardia; Mohseni, Pedram

2015-01-01

This paper demonstrates the feasibility of utilizing impulse radio ultra wideband (IR-UWB) signaling technique for reliable, wireless transmission of dopamine concentration levels recorded by fast-scan cyclic voltammetry (FSCV) at a carbon-fiber microelectrode (CFM) to address the problem of elevated data rates in high-channel-count neurochemical monitoring. Utilizing an FSCV-sensing chip fabricated in AMS 0.35μm 2P/4M CMOS, a 3-5-GHz, IR-UWB transceiver (TRX) chip fabricated in TSMC 90nm 1P/9M RF CMOS, and two off-chip, miniature, UWB antennae, wireless transfer of pseudo-random binary sequence (PRBS) data at 50Mbps over a distance of <;1m is first shown with bit-error rates (BER) <; 10(-3). Further, IR-UWB wireless transmission of dopamine concentration levels prerecorded with FSCV at a CFM during flow injection analysis (FIA) is also demonstrated with transmitter (TX) power dissipation of only ~4.4μW from 1.2V, representing two orders of magnitude reduction in TX power consumption compared to that of a conventional frequency-shift-keyed (FSK) link operating at ~433MHz.

A Two-Stage Reconstruction Processor for Human Detection in Compressive Sensing CMOS Radar

PubMed Central

Tsao, Kuei-Chi; Lee, Ling; Chu, Ta-Shun

2018-01-01

Complementary metal-oxide-semiconductor (CMOS) radar has recently gained much research attraction because small and low-power CMOS devices are very suitable for deploying sensing nodes in a low-power wireless sensing system. This study focuses on the signal processing of a wireless CMOS impulse radar system that can detect humans and objects in the home-care internet-of-things sensing system. The challenges of low-power CMOS radar systems are the weakness of human signals and the high computational complexity of the target detection algorithm. The compressive sensing-based detection algorithm can relax the computational costs by avoiding the utilization of matched filters and reducing the analog-to-digital converter bandwidth requirement. The orthogonal matching pursuit (OMP) is one of the popular signal reconstruction algorithms for compressive sensing radar; however, the complexity is still very high because the high resolution of human respiration leads to high-dimension signal reconstruction. Thus, this paper proposes a two-stage reconstruction algorithm for compressive sensing radar. The proposed algorithm not only has lower complexity than the OMP algorithm by 75% but also achieves better positioning performance than the OMP algorithm especially in noisy environments. This study also designed and implemented the algorithm by using Vertex-7 FPGA chip (Xilinx, San Jose, CA, USA). The proposed reconstruction processor can support the 256×13 real-time radar image display with a throughput of 28.2 frames per second. PMID:29621170

Wireless Interconnects for Intra-chip & Inter-chip Transmission

NASA Astrophysics Data System (ADS)

Narde, Rounak Singh

With the emergence of Internet of Things and information revolution, the demand of high performance computing systems is increasing. The copper interconnects inside the computing chips have evolved into a sophisticated network of interconnects known as Network on Chip (NoC) comprising of routers, switches, repeaters, just like computer networks. When network on chip is implemented on a large scale like in Multicore Multichip (MCMC) systems for High Performance Computing (HPC) systems, length of interconnects increases and so are the problems like power dissipation, interconnect delays, clock synchronization and electrical noise. In this thesis, wireless interconnects are chosen as the substitute for wired copper interconnects. Wireless interconnects offer easy integration with CMOS fabrication and chip packaging. Using wireless interconnects working at unlicensed mm-wave band (57-64GHz), high data rate of Gbps can be achieved. This thesis presents study of transmission between zigzag antennas as wireless interconnects for Multichip multicores (MCMC) systems and 3D IC. For MCMC systems, a four-chips 16-cores model is analyzed with only four wireless interconnects in three configurations with different antenna orientations and locations. Return loss and transmission coefficients are simulated in ANSYS HFSS. Moreover, wireless interconnects are designed, fabricated and tested on a 6'' silicon wafer with resistivity of 55O-cm using a basic standard CMOS process. Wireless interconnect are designed to work at 30GHz using ANSYS HFSS. The fabricated antennas are resonating around 20GHz with a return loss of less than -10dB. The transmission coefficients between antenna pair within a 20mm x 20mm silicon die is found to be varying between -45dB to -55dB. Furthermore, wireless interconnect approach is extended for 3D IC. Wireless interconnects are implemented as zigzag antenna. This thesis extends the work of analyzing the wireless interconnects in 3D IC with different configurations of antenna orientations and coolants. The return loss and transmission coefficients are simulated using ANSYS HFSS.

A sub-nJ CMOS ECG classifier for wireless smart sensor.

PubMed

Chollet, Paul; Pallas, Remi; Lahuec, Cyril; Arzel, Matthieu; Seguin, Fabrice

2017-07-01

Body area sensor networks hold the promise of more efficient and cheaper medical care services through the constant monitoring of physiological markers such as heart beats. Continuously transmitting the electrocardiogram (ECG) signal requires most of the wireless ECG sensor energy budget. This paper presents the analog implantation of a classifier for ECG signals that can be embedded onto a sensor. The classifier is a sparse neural associative memory. It is implemented using the ST 65 nm CMOS technology and requires only 234 pJ per classification while achieving a 93.6% classification accuracy. The energy requirement is 6 orders of magnitude lower than a digital accelerator that performs a similar task. The lifespan of the resulting sensor is 191 times as large as that of a sensor sending all the data.

A wireless capsule system with ASIC for monitoring the physiological signals of the human gastrointestinal tract.

PubMed

Xu, Fei; Yan, Guozheng; Zhao, Kai; Lu, Li; Gao, Jinyang; Liu, Gang

2014-12-01

This paper presents the design of a wireless capsule system for monitoring the physiological signals of the human gastrointestinal (GI) tract. The primary components of the system include a wireless capsule, a portable data recorder, and a workstation. Temperature, pH, and pressure sensors; an RF transceiver; a controlling and processing application specific integrated circuit (ASIC); and batteries were applied in a wireless capsule. Decreasing capsule size, improving sensor precision, and reducing power needs were the primary challenges; these were resolved by employing micro sensors, optimized architecture, and an ASIC design that include power management, clock management, a programmable gain amplifier (PGA), an A/D converter (ADC), and a serial peripheral interface (SPI) communication unit. The ASIC has been fabricated in 0.18- μm CMOS technology with a die area of 5.0 mm × 5.0 mm. The wireless capsule integrating the ASIC controller measures Φ 11 mm × 26 mm. A data recorder and a workstation were developed, and 20 cases of human experiments were conducted in hospitals. Preprocessing in the workstation can significantly improve the quality of the data, and 76 original features were determined by mathematical statistics. Based on the 13 optimal features achieved in the evaluation of the features, the clustering algorithm can identify the patients who lack GI motility with a recognition rate reaching 83.3%.

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

PubMed Central

Shokrani, Mohammad Reza; Hamidon, Mohd Nizar B.; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

PubMed

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

A Wireless Fiber Photometry System Based on a High-Precision CMOS Biosensor With Embedded Continuous-Time Modulation.

PubMed

Khiarak, Mehdi Noormohammadi; Martianova, Ekaterina; Bories, Cyril; Martel, Sylvain; Proulx, Christophe D; De Koninck, Yves; Gosselin, Benoit

2018-06-01

Fluorescence biophotometry measurements require wide dynamic range (DR) and high-sensitivity laboratory apparatus. Indeed, it is often very challenging to accurately resolve the small fluorescence variations in presence of noise and high-background tissue autofluorescence. There is a great need for smaller detectors combining high linearity, high sensitivity, and high-energy efficiency. This paper presents a new biophotometry sensor merging two individual building blocks, namely a low-noise sensing front-end and a order continuous-time modulator (CTSDM), into a single module for enabling high-sensitivity and high energy-efficiency photo-sensing. In particular, a differential CMOS photodetector associated with a differential capacitive transimpedance amplifier-based sensing front-end is merged with an incremental order 1-bit CTSDM to achieve a large DR, low hardware complexity, and high-energy efficiency. The sensor leverages a hardware sharing strategy to simplify the implementation and reduce power consumption. The proposed CMOS biosensor is integrated within a miniature wireless head mountable prototype for enabling biophotometry with a single implantable fiber in the brain of live mice. The proposed biophotometry sensor is implemented in a 0.18- CMOS technology, consuming from a 1.8- supply voltage, while achieving a peak dynamic range of over a 50- input bandwidth, a sensitivity of 24 mV/nW, and a minimum detectable current of 2.46- at a 20- sampling rate.

A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process

NASA Astrophysics Data System (ADS)

Wang, Jiafeng; Fan, Xiangning; Shi, Xiaoyang; Wang, Zhigong

2017-12-01

With the rapid evolution of wireless communication technology, integrating various communication modes in a mobile terminal has become the popular trend. Because of this, multi-standard wireless technology is one of the hot spots in current research. This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications. High-speed divider-by-2 with traditional source-coupled-logic is designed for very wide band usage. Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step. The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider. Δ-Σ modulator is achieved by an improved MASH 1-1-1 structure. This structure has excellent performance in many ways, such as noise, spur and input dynamic range. Fabricated in TSMC 0.18μm CMOS process, the fractional-N frequency divider occupies a chip area of 1130 × 510 μm2 and it can correctly divide within the frequency range of 0.8-9 GHz. With 1.8 V supply voltage, its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.

Review of Millimeter-Wave Integrated Circuits With Low Power Consumption for High Speed Wireless Communications

NASA Astrophysics Data System (ADS)

Ellinger, Frank; Fritsche, David; Tretter, Gregor; Leufker, Jan Dirk; Yodprasit, Uroschanit; Carta, C.

2017-01-01

In this paper we review high-speed radio-frequency integrated circuits operating up to 210 GHz and present selected state-of-the-art circuits with leading-edge performance, which we have designed at our chair. The following components are discussed employing bipolar complementary metal oxide semiconductors (BiCMOS) technologies: a 200 GHz amplifier with 17 dB gain and around 9 dB noise figure consuming only 18 mW, a 200 GHz down mixer with 5.5 dB conversion gain and 40 mW power consumption, a 190 GHz receiver with 47 dB conversion gain and 11 dB noise figure and a 60 GHz power amplifier with 24.5 dBm output power and 12.9 % power added efficiency (PAE). Moreover, we report on a single-core flash CMOS analogue-to-digital converter (ADC) with 3 bit resolution and a speed of 24 GS/s. Finally, we discuss a 60 GHz on-off keying (OOK) BiCMOS transceiver chip set. The wireless transmission of data with 5 Gb/s at 42 cm distance between transmitter and receiver was verified by experiments. The complete transceiver consumes 396 mW.

A power management system for energy harvesting and wireless sensor networks application based on a novel charge pump circuit

NASA Astrophysics Data System (ADS)

Aloulou, R.; De Peslouan, P.-O. Lucas; Mnif, H.; Alicalapa, F.; Luk, J. D. Lan Sun; Loulou, M.

2016-05-01

Energy Harvesting circuits are developed as an alternative solution to supply energy to autonomous sensor nodes in Wireless Sensor Networks. In this context, this paper presents a micro-power management system for multi energy sources based on a novel design of charge pump circuit to allow the total autonomy of self-powered sensors. This work proposes a low-voltage and high performance charge pump (CP) suitable for implementation in standard complementary metal oxide semiconductor (CMOS) technologies. The CP design was implemented using Cadence Virtuoso with AMS 0.35μm CMOS technology parameters. Its active area is 0.112 mm2. Consistent results were obtained between the measured findings of the chip testing and the simulation results. The circuit can operate with an 800 mV supply and generate a boosted output voltage of 2.835 V with 1 MHz as frequency.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

PubMed

Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

2008-11-01

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Wireless neural recording with single low-power integrated circuit.

PubMed

Harrison, Reid R; Kier, Ryan J; Chestek, Cynthia A; Gilja, Vikash; Nuyujukian, Paul; Ryu, Stephen; Greger, Bradley; Solzbacher, Florian; Shenoy, Krishna V

2009-08-01

We present benchtop and in vivo experimental results from an integrated circuit designed for wireless implantable neural recording applications. The chip, which was fabricated in a commercially available 0.6- mum 2P3M BiCMOS process, contains 100 amplifiers, a 10-bit analog-to-digital converter (ADC), 100 threshold-based spike detectors, and a 902-928 MHz frequency-shift-keying (FSK) transmitter. Neural signals from a selected amplifier are sampled by the ADC at 15.7 kSps and telemetered over the FSK wireless data link. Power, clock, and command signals are sent to the chip wirelessly over a 2.765-MHz inductive (coil-to-coil) link. The chip is capable of operating with only two off-chip components: a power/command receiving coil and a 100-nF capacitor.

Optical wireless link between a nanoscale antenna and a transducing rectenna.

PubMed

Dasgupta, Arindam; Mennemanteuil, Marie-Maxime; Buret, Mickaël; Cazier, Nicolas; Colas-des-Francs, Gérard; Bouhelier, Alexandre

2018-05-18

Initiated as a cable-replacement solution, short-range wireless power transfer has rapidly become ubiquitous in the development of modern high-data throughput networking in centimeter to meter accessibility range. Wireless technology is now penetrating a higher level of system integration for chip-to-chip and on-chip radiofrequency interconnects. However, standard CMOS integrated millimeter-wave antennas have typical size commensurable with the operating wavelength, and are thus an unrealistic solution for downsizing transmitters and receivers to the micrometer and nanometer scale. Herein, we demonstrate a light-in and electrical signal-out, on-chip wireless near-infrared link between a 220 nm optical antenna and a sub-nanometer rectifying antenna converting the transmitted optical energy into direct electrical current. The co-integration of subwavelength optical functional devices with electronic transduction offers a disruptive solution to interface photons and electrons at the nanoscale for on-chip wireless optical interconnects.

Graphene/Si CMOS Hybrid Hall Integrated Circuits

PubMed Central

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-01-01

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

Graphene/Si CMOS hybrid hall integrated circuits.

PubMed

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-07-07

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

A novel wireless power and data transmission AC to DC converter for an implantable device.

PubMed

Liu, Jhao-Yan; Tang, Kea-Tiong

2013-01-01

This article presents a novel AC to DC converter implemented by standard CMOS technology, applied for wireless power transmission. This circuit combines the functions of the rectifier and DC to DC converter, rather than using the rectifier to convert AC to DC and then supplying the required voltage with regulator as in the transitional method. This modification can reduce the power consumption and the area of the circuit. This circuit also transfers the loading condition back to the external circuit by the load shift keying(LSK), determining if the input power is not enough or excessive, which increases the efficiency of the total system. The AC to DC converter is fabricated with the TSMC 90nm CMOS process. The circuit area is 0.071mm(2). The circuit can produce a 1V DC voltage with maximum output current of 10mA from an AC input ranging from 1.5V to 2V, at 1MHz to 10MHz.

Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems.

PubMed

Okabe, Kenji; Jeewan, Horagodage Prabhath; Yamagiwa, Shota; Kawano, Takeshi; Ishida, Makoto; Akita, Ippei

2015-12-16

In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI) chip on the very thin parylene film (5 μm) enables the integration of the rectifier circuits and the flexible antenna (rectenna). In the demonstration of wireless power transmission (WPT), the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems

PubMed Central

Okabe, Kenji; Jeewan, Horagodage Prabhath; Yamagiwa, Shota; Kawano, Takeshi; Ishida, Makoto; Akita, Ippei

2015-01-01

In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI) chip on the very thin parylene film (5 μm) enables the integration of the rectifier circuits and the flexible antenna (rectenna). In the demonstration of wireless power transmission (WPT), the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction. PMID:26694407

Wireless Neural Recording With Single Low-Power Integrated Circuit

PubMed Central

Harrison, Reid R.; Kier, Ryan J.; Chestek, Cynthia A.; Gilja, Vikash; Nuyujukian, Paul; Ryu, Stephen; Greger, Bradley; Solzbacher, Florian; Shenoy, Krishna V.

2010-01-01

We present benchtop and in vivo experimental results from an integrated circuit designed for wireless implantable neural recording applications. The chip, which was fabricated in a commercially available 0.6-μm 2P3M BiCMOS process, contains 100 amplifiers, a 10-bit analog-to-digital converter (ADC), 100 threshold-based spike detectors, and a 902–928 MHz frequency-shift-keying (FSK) transmitter. Neural signals from a selected amplifier are sampled by the ADC at 15.7 kSps and telemetered over the FSK wireless data link. Power, clock, and command signals are sent to the chip wirelessly over a 2.765-MHz inductive (coil-to-coil) link. The chip is capable of operating with only two off-chip components: a power/command receiving coil and a 100-nF capacitor. PMID:19497825

A Wireless Implantable Switched-Capacitor Based Optogenetic Stimulating System

PubMed Central

Lee, Hyung-Min; Kwon, Ki-Yong; Li, Wen

2015-01-01

This paper presents a power-efficient implantable optogenetic interface using a wireless switched-capacitor based stimulating (SCS) system. The SCS efficiently charges storage capacitors directly from an inductive link and periodically discharges them into an array of micro-LEDs, providing high instantaneous power without affecting wireless link and system supply voltage. A custom-designed computer interface in LabVIEW environment wirelessly controls stimulation parameters through the inductive link, and an optrode array enables simultaneous neural recording along with optical stimulation. The 4-channel SCS system prototype has been implemented in a 0.35-μm CMOS process and combined with the optrode array. In vivo experiments involving light-induced local field potentials verified the efficacy of the SCS system. An implantable version of the SCS system with flexible hermetic sealing is under development for chronic experiments. PMID:25570099

A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

PubMed

Yan Lu; Wing-Hung Ki

2014-06-01

A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

NASA Astrophysics Data System (ADS)

Becerra-Alvarez, Edwin C.; Sandoval-Ibarra, Federico; de la Rosa, José M.

2009-05-01

This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF<2.8dB, S21>13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.

Integrated Inductors for RF Transmitters in CMOS/MEMS Smart Microsensor Systems

PubMed Central

Kim, Jong-Wan; Takao, Hidekuni; Sawada, Kazuaki; Ishida, Makoto

2007-01-01

This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensor systems that have been developed to monitor the motion and vital signs of humans in various environments. Integration of radio frequency transmitter (RF) technology with complementary metal-oxide-semiconductor/micro electro mechanical systems (CMOS/MEMS) microsensors is required to realize the wireless smart microsensors system. The essential RF components such as a voltage controlled RF-CMOS oscillator (VCO), spiral inductors for an LC resonator and an integrated antenna have been fabricated and evaluated experimentally. The fabricated RF transmitter and integrated antenna were packaged with subminiature series A (SMA) connectors, respectively. For the impedance (50 Ω) matching, a bonding wire type inductor was developed. In this paper, the design and fabrication of the bonding wire inductor for impedance matching is described. Integrated techniques for the RF transmitter by CMOS compatible processes have been successfully developed. After matching by inserting the bonding wire inductor between the on-chip integrated antenna and the VCO output, the measured emission power at distance of 5 m from RF transmitter was -37 dBm (0.2 μW).

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE PAGES

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun; ...

2017-03-27

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

Lifting Scheme DWT Implementation in a Wireless Vision Sensor Network

NASA Astrophysics Data System (ADS)

Ong, Jia Jan; Ang, L.-M.; Seng, K. P.

This paper presents the practical implementation of a Wireless Visual Sensor Network (WVSN) with DWT processing on the visual nodes. WVSN consists of visual nodes that capture video and transmit to the base-station without processing. Limitation of network bandwidth restrains the implementation of real time video streaming from remote visual nodes through wireless communication. Three layers of DWT filters are implemented to process the captured image from the camera. With having all the wavelet coefficients produced, it is possible just to transmit the low frequency band coefficients and obtain an approximate image at the base-station. This will reduce the amount of power required in transmission. When necessary, transmitting all the wavelet coefficients will produce the full detail of image, which is similar to the image captured at the visual nodes. The visual node combines the CMOS camera, Xilinx Spartan-3L FPGA and wireless ZigBee® network that uses the Ember EM250 chip.

324GHz CMOS VCO Using Linear Superimposition Technique

NASA Technical Reports Server (NTRS)

Daquan, Huang; LaRocca, Tim R.; Samoska, Lorene A; Fung, Andy; Chang, Frank

2007-01-01

Terahertz (frequencies ranged from 300GHz to 3THz) imaging and spectroscopic systems have drawn increasing attention recently due to their unique capabilities in detecting and possibly analyzing concealed objects. The generation of terahertz signals is nonetheless nontrivial and traditionally accomplished by using either free-electron radiation, optical lasers, Gunn diodes or fundamental oscillation by using III-V based HBT/HEMT technology[1-3]... We have substantially extended the operation range of deep-scaled CMOS by using a linear superimposition method, in which we have realized a 324GHz VCO in 90nm digital CMOS with 4GHz tuning range under 1V supply voltage. This may also pave the way for ultra-high data rate wireless communications beyond that of IEEE 802.15.3c and reach data rates comparable to that of fiber optical communications, such as OC768 (40Gbps) and beyond.

Monolithic optical phased-array transceiver in a standard SOI CMOS process.

PubMed

Abediasl, Hooman; Hashemi, Hossein

2015-03-09

Monolithic microwave phased arrays are turning mainstream in automotive radars and high-speed wireless communications fulfilling Gordon Moores 1965 prophecy to this effect. Optical phased arrays enable imaging, lidar, display, sensing, and holography. Advancements in fabrication technology has led to monolithic nanophotonic phased arrays, albeit without independent phase and amplitude control ability, integration with electronic circuitry, or including receive and transmit functions. We report the first monolithic optical phased array transceiver with independent control of amplitude and phase for each element using electronic circuitry that is tightly integrated with the nanophotonic components on one substrate using a commercial foundry CMOS SOI process. The 8 × 8 phased array chip includes thermo-optical tunable phase shifters and attenuators, nano-photonic antennas, and dedicated control electronics realized using CMOS transistors. The complex chip includes over 300 distinct optical components and over 74,000 distinct electrical components achieving the highest level of integration for any electronic-photonic system.

Decoding mobile-phone image sensor rolling shutter effect for visible light communications

NASA Astrophysics Data System (ADS)

Liu, Yang

2016-01-01

Optical wireless communication (OWC) using visible lights, also known as visible light communication (VLC), has attracted significant attention recently. As the traditional OWC and VLC receivers (Rxs) are based on PIN photo-diode or avalanche photo-diode, deploying the complementary metal-oxide-semiconductor (CMOS) image sensor as the VLC Rx is attractive since nowadays nearly every person has a smart phone with embedded CMOS image sensor. However, deploying the CMOS image sensor as the VLC Rx is challenging. In this work, we propose and demonstrate two simple contrast ratio (CR) enhancement schemes to improve the contrast of the rolling shutter pattern. Then we describe their processing algorithms one by one. The experimental results show that both the proposed CR enhancement schemes can significantly mitigate the high-intensity fluctuations of the rolling shutter pattern and improve the bit-error-rate performance.

A digital output piezoelectric accelerometer using a Pb(Zr, Ti)O3 thin film array electrically connected in series

NASA Astrophysics Data System (ADS)

Kobayashi, T.; Okada, H.; Masuda, T.; Maeda, R.; Itoh, T.

2010-10-01

A digital output piezoelectric accelerometer is proposed to realize an ultra-low power consumption wireless sensor node. The accelerometer has patterned piezoelectric thin films (piezoelectric plates) electrically connected in series accompanied by CMOS switches at the end of some of the piezoelectric plates. The connected piezoelectric plates amplify the output voltage without the use of amplifiers. The CMOS switches turn on when the output voltage of the piezoelectric plates is higher than the CMOS threshold voltage. The piezoelectric accelerometer converts the acceleration into a number of on-state CMOS switches, which can be called the digital output. The proposed digital output piezoelectric accelerometer, using Pb(Zr, Ti)O3 (PZT) thin films as the piezoelectric material, was fabricated through a microelectromechanical system (MEMS) microfabrication process. The output voltage was found to be amplified by the number of connected piezoelectric plates. The DC output voltage obtained by using an AC to DC conversion circuit is proportional to the number of connections. The results show the potential for realizing the proposed digital output piezoelectric accelerometer.

1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.

PubMed

Zuo, Chengjie; Van der Spiegel, Jan; Piazza, Gianluca

2010-01-01

This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of -146 dBc/Hz, which satisfies the global system for mobile communications (GSM) requirements for ultra-high frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMI semiconductor (AMIS) 0.5-microm complementary metaloxide- semiconductor (CMOS) process, with the oscillator core consuming only 3.5 mW DC power. The device overall performance has the best figure-of-merit (FoM) when compared with other gigahertz oscillators that are based on film bulk acoustic resonator (FBAR), surface acoustic wave (SAW), and CMOS on-chip inductor and capacitor (CMOS LC) technologies. A simple 2-mask process was used to fabricate the LFE AlN resonators operating between 843 MHz and 1.64 GHz with simultaneously high Q (up to 2,200) and kt 2 (up to 1.2%). This process further relaxes manufacturing tolerances and improves yield. All these advantages make these devices suitable for post-CMOS integrated on-chip direct gigahertz frequency synthesis in reconfigurable multiband wireless communications.

Dense, Efficient Chip-to-Chip Communication at the Extremes of Computing

ERIC Educational Resources Information Center

Loh, Matthew

2013-01-01

The scalability of CMOS technology has driven computation into a diverse range of applications across the power consumption, performance and size spectra. Communication is a necessary adjunct to computation, and whether this is to push data from node-to-node in a high-performance computing cluster or from the receiver of wireless link to a neural…

Autonomous vision networking: miniature wireless sensor networks with imaging technology

NASA Astrophysics Data System (ADS)

Messinger, Gioia; Goldberg, Giora

2006-09-01

The recent emergence of integrated PicoRadio technology, the rise of low power, low cost, System-On-Chip (SOC) CMOS imagers, coupled with the fast evolution of networking protocols and digital signal processing (DSP), created a unique opportunity to achieve the goal of deploying large-scale, low cost, intelligent, ultra-low power distributed wireless sensor networks for the visualization of the environment. Of all sensors, vision is the most desired, but its applications in distributed sensor networks have been elusive so far. Not any more. The practicality and viability of ultra-low power vision networking has been proven and its applications are countless, from security, and chemical analysis to industrial monitoring, asset tracking and visual recognition, vision networking represents a truly disruptive technology applicable to many industries. The presentation discusses some of the critical components and technologies necessary to make these networks and products affordable and ubiquitous - specifically PicoRadios, CMOS imagers, imaging DSP, networking and overall wireless sensor network (WSN) system concepts. The paradigm shift, from large, centralized and expensive sensor platforms, to small, low cost, distributed, sensor networks, is possible due to the emergence and convergence of a few innovative technologies. Avaak has developed a vision network that is aided by other sensors such as motion, acoustic and magnetic, and plans to deploy it for use in military and commercial applications. In comparison to other sensors, imagers produce large data files that require pre-processing and a certain level of compression before these are transmitted to a network server, in order to minimize the load on the network. Some of the most innovative chemical detectors currently in development are based on sensors that change color or pattern in the presence of the desired analytes. These changes are easily recorded and analyzed by a CMOS imager and an on-board DSP processor. Image processing at the sensor node level may also be required for applications in security, asset management and process control. Due to the data bandwidth requirements posed on the network by video sensors, new networking protocols or video extensions to existing standards (e.g. Zigbee) are required. To this end, Avaak has designed and implemented an ultra-low power networking protocol designed to carry large volumes of data through the network. The low power wireless sensor nodes that will be discussed include a chemical sensor integrated with a CMOS digital camera, a controller, a DSP processor and a radio communication transceiver, which enables relaying of an alarm or image message, to a central station. In addition to the communications, identification is very desirable; hence location awareness will be later incorporated to the system in the form of Time-Of-Arrival triangulation, via wide band signaling. While the wireless imaging kernel already exists specific applications for surveillance and chemical detection are under development by Avaak, as part of a co-founded program from ONR and DARPA. Avaak is also designing vision networks for commercial applications - some of which are undergoing initial field tests.

Development of a handheld smart dental instrument for root canal imaging

NASA Astrophysics Data System (ADS)

Okoro, Chukwuemeka; Vartanian, Albert; Toussaint, , Kimani C., Jr.

2016-11-01

Ergonomics and ease of visualization play a major role in the effectiveness of endodontic therapy. Using only commercial off-the-shelf components, we present the pulpascope-a prototype of a compact, handheld, wireless dental instrument for pulp cavity imaging. This instrument addresses the current limitations of occupational injuries, size, and cost that exist with current endodontic microscopes used for root canal procedures. Utilizing a 15,000 coherent, imaging fiber bundle along with an integrated illumination source and wireless CMOS sensor, we demonstrate images of various teeth with resolution of ˜48 μm and angular field-of-view of 70 deg.

Low Power Transmitter for Wireless Capsule Endoscope

NASA Astrophysics Data System (ADS)

Lioe, D. X.; Shafie, S.; Ramiah, H.; Sulaiman, N.; Halin, I. A.

2013-04-01

This paper presents the transmitter circuit designed for the application of wireless capsule endoscope to overcome the limitation of conventional endoscope. The design is performed using CMOS 0.13 μm technology. The transmitter is designed to operate at centre frequency of 433.92 MHz, which is one of the ISM band. Active mixer and ring oscillator made up the transmitter and it consumes 1.57 mA of current using a supply voltage of 1.2 V, brings the dc power consumption of the transmitter to be 1.88 mW. Data rate of 3.5 Mbps ensure it can transmit high quality medical imaging.

Low-Power Direct-Sequence Spread-Spectrum Modem Architecture for Distributed Wireless Sensor Networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chien, C; Elgorriaga, I; McConaghy, C

2001-07-03

Emerging CMOS and MEMS technologies enable the implementation of a large number of wireless distributed microsensors that can be easily and rapidly deployed to form highly redundant, self-configuring, and ad hoc sensor networks. To facilitate ease of deployment, these sensors should operate on battery for extended periods of time. A particular challenge in maintaining extended battery lifetime lies in achieving communications with low power. This paper presents a direct-sequence spread-spectrum modem architecture that provides robust communications for wireless sensor networks while dissipating very low power. The modem architecture has been verified in an FPGA implementation that dissipates only 33 mWmore » for both transmission and reception. The implementation can be easily mapped to an ASIC technology, with an estimated power performance of less than 1 mW.« less

Design of a 2.4-GHz CMOS monolithic fractional-N frequency synthesizer

NASA Astrophysics Data System (ADS)

Shu, Keliu

The wireless communication technology and market have been growing rapidly since a decade ago. The high demand market is a driving need for higher integration in the wireless transceivers. The trend is to achieve low-cost, small form factor and low power consumption. With the ever-reducing feature size, it is becoming feasible to integrate the RF front-end together with the baseband in the low-cost CMOS technology. The frequency synthesizer is a key building block in the RF front-end of the transceivers. It is used as a local oscillator for frequency translation and channel selection. The design of a 2.4-GHz low-power frequency synthesizer in 0.35mum CMOS is a challenging task mainly due to the high-speed prescaler. In this dissertation, a brief review of conventional PLL and frequency synthesizers is provided. Design techniques of a 2.4-GHz monolithic SigmaDelta fractional-N frequency synthesizer are investigated. Novel techniques are proposed to tackle the speed and integration bottlenecks of high-frequency PLL. A low-power and inherently glitch-free phase-switching prescaler and an on-chip loop filter with capacitance multiplier are developed. Compared with the existing and popular dual-path topology, the proposed loop filter reduces circuit complexity and its power consumption and noise are negligible. Furthermore, a third-order three-level digital SigmaDelta modulator topology is employed to reduce the phase noise generated by the modulator. Suitable PFD and charge-pump designs are employed to reduce their nonlinearity effects and thus minimize the folding of the SigmaDelta modulator-shaped phase noise. A prototype of the fractional-N synthesizer together with some standalone building blocks is designed and fabricated in TSMC 0.35mum CMOS through MOSIS. The prototype frequency synthesizer and standalone prescaler and loop filter are characterized. The feasibility and practicality of the proposed prescaler and loop filter are experimentally verified.

CMOS: Efficient Clustered Data Monitoring in Sensor Networks

PubMed Central

2013-01-01

Tiny and smart sensors enable applications that access a network of hundreds or thousands of sensors. Thus, recently, many researchers have paid attention to wireless sensor networks (WSNs). The limitation of energy is critical since most sensors are battery-powered and it is very difficult to replace batteries in cases that sensor networks are utilized outdoors. Data transmission between sensor nodes needs more energy than computation in a sensor node. In order to reduce the energy consumption of sensors, we present an approximate data gathering technique, called CMOS, based on the Kalman filter. The goal of CMOS is to efficiently obtain the sensor readings within a certain error bound. In our approach, spatially close sensors are grouped as a cluster. Since a cluster header generates approximate readings of member nodes, a user query can be answered efficiently using the cluster headers. In addition, we suggest an energy efficient clustering method to distribute the energy consumption of cluster headers. Our simulation results with synthetic data demonstrate the efficiency and accuracy of our proposed technique. PMID:24459444

CMOS: efficient clustered data monitoring in sensor networks.

PubMed

Min, Jun-Ki

2013-01-01

Tiny and smart sensors enable applications that access a network of hundreds or thousands of sensors. Thus, recently, many researchers have paid attention to wireless sensor networks (WSNs). The limitation of energy is critical since most sensors are battery-powered and it is very difficult to replace batteries in cases that sensor networks are utilized outdoors. Data transmission between sensor nodes needs more energy than computation in a sensor node. In order to reduce the energy consumption of sensors, we present an approximate data gathering technique, called CMOS, based on the Kalman filter. The goal of CMOS is to efficiently obtain the sensor readings within a certain error bound. In our approach, spatially close sensors are grouped as a cluster. Since a cluster header generates approximate readings of member nodes, a user query can be answered efficiently using the cluster headers. In addition, we suggest an energy efficient clustering method to distribute the energy consumption of cluster headers. Our simulation results with synthetic data demonstrate the efficiency and accuracy of our proposed technique.

An ultra low-power CMOS automatic action potential detector.

PubMed

Gosselin, Benoit; Sawan, Mohamad

2009-08-01

We present a low-power complementary metal-oxide semiconductor (CMOS) analog integrated biopotential detector intended for neural recording in wireless multichannel implants. The proposed detector can achieve accurate automatic discrimination of action potential (APs) from the background activity by means of an energy-based preprocessor and a linear delay element. This strategy improves detected waveforms integrity and prompts for better performance in neural prostheses. The delay element is implemented with a low-power continuous-time filter using a ninth-order equiripple allpass transfer function. All circuit building blocks use subthreshold OTAs employing dedicated circuit techniques for achieving ultra low-power and high dynamic range. The proposed circuit function in the submicrowatt range as the implemented CMOS 0.18- microm chip dissipates 780 nW, and it features a size of 0.07 mm(2). So it is suitable for massive integration in a multichannel device with modest overhead. The fabricated detector succeeds to automatically detect APs from underlying background activity. Testbench validation results obtained with synthetic neural waveforms are presented.

A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

PubMed

Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

2012-08-01

We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

Design of a 0.13-μm CMOS cascade expandable ΣΔ modulator for multi-standard RF telecom systems

NASA Astrophysics Data System (ADS)

Morgado, Alonso; del Río, Rocío; de la Rosa, José M.

2007-05-01

This paper reports a 130-nm CMOS programmable cascade ΣΔ modulator for multi-standard wireless terminals, capable of operating on three standards: GSM, Bluetooth and UMTS. The modulator is reconfigured at both architecture- and circuit- level in order to adapt its performance to the different standards specifications with optimized power consumption. The design of the building blocks is based upon a top-down CAD methodology that combines simulation and statistical optimization at different levels of the system hierarchy. Transistor-level simulations show correct operation for all standards, featuring 13-bit, 11.3-bit and 9-bit effective resolution within 200-kHz, 1-MHz and 4-MHz bandwidth, respectively.

A Three-Step Resolution-Reconfigurable Hazardous Multi-Gas Sensor Interface for Wireless Air-Quality Monitoring Applications.

PubMed

Choi, Subin; Park, Kyeonghwan; Lee, Seungwook; Lim, Yeongjin; Oh, Byungjoo; Chae, Hee Young; Park, Chan Sam; Shin, Heugjoo; Kim, Jae Joon

2018-03-02

This paper presents a resolution-reconfigurable wide-range resistive sensor readout interface for wireless multi-gas monitoring applications that displays results on a smartphone. Three types of sensing resolutions were selected to minimize processing power consumption, and a dual-mode front-end structure was proposed to support the detection of a variety of hazardous gases with wide range of characteristic resistance. The readout integrated circuit (ROIC) was fabricated in a 0.18 μm CMOS process to provide three reconfigurable data conversions that correspond to a low-power resistance-to-digital converter (RDC), a 12-bit successive approximation register (SAR) analog-to-digital converter (ADC), and a 16-bit delta-sigma modulator. For functional feasibility, a wireless sensor system prototype that included in-house microelectromechanical (MEMS) sensing devices and commercial device products was manufactured and experimentally verified to detect a variety of hazardous gases.

Wireless Multimedia Sensor Networks: Current Trends and Future Directions

PubMed Central

Almalkawi, Islam T.; Zapata, Manel Guerrero; Al-Karaki, Jamal N.; Morillo-Pozo, Julian

2010-01-01

Wireless Multimedia Sensor Networks (WMSNs) have emerged and shifted the focus from the typical scalar wireless sensor networks to networks with multimedia devices that are capable to retrieve video, audio, images, as well as scalar sensor data. WMSNs are able to deliver multimedia content due to the availability of inexpensive CMOS cameras and microphones coupled with the significant progress in distributed signal processing and multimedia source coding techniques. In this paper, we outline the design challenges of WMSNs, give a comprehensive discussion of the proposed architectures, algorithms and protocols for the different layers of the communication protocol stack for WMSNs, and evaluate the existing WMSN hardware and testbeds. The paper will give the reader a clear view of the state of the art at all aspects of this research area, and shed the light on its main current challenges and future trends. We also hope it will foster discussions and new research ideas among its researchers. PMID:22163571

An Energy-Efficient and High-Quality Video Transmission Architecture in Wireless Video-Based Sensor Networks.

PubMed

Aghdasi, Hadi S; Abbaspour, Maghsoud; Moghadam, Mohsen Ebrahimi; Samei, Yasaman

2008-08-04

Technological progress in the fields of Micro Electro-Mechanical Systems (MEMS) and wireless communications and also the availability of CMOS cameras, microphones and small-scale array sensors, which may ubiquitously capture multimedia content from the field, have fostered the development of low-cost limited resources Wireless Video-based Sensor Networks (WVSN). With regards to the constraints of videobased sensor nodes and wireless sensor networks, a supporting video stream is not easy to implement with the present sensor network protocols. In this paper, a thorough architecture is presented for video transmission over WVSN called Energy-efficient and high-Quality Video transmission Architecture (EQV-Architecture). This architecture influences three layers of communication protocol stack and considers wireless video sensor nodes constraints like limited process and energy resources while video quality is preserved in the receiver side. Application, transport, and network layers are the layers in which the compression protocol, transport protocol, and routing protocol are proposed respectively, also a dropping scheme is presented in network layer. Simulation results over various environments with dissimilar conditions revealed the effectiveness of the architecture in improving the lifetime of the network as well as preserving the video quality.

Using Pulse Width Modulation for Wireless Transmission of Neural Signals in Multichannel Neural Recording Systems

PubMed Central

Yin, Ming; Ghovanloo, Maysam

2013-01-01

We have used a well-known technique in wireless communication, pulse width modulation (PWM) of time division multiplexed (TDM) signals, within the architecture of a novel wireless integrated neural recording (WINeR) system. We have evaluated the performance of the PWM-based architecture and indicated its accuracy and potential sources of error through detailed theoretical analysis, simulations, and measurements on a setup consisting of a 15-channel WINeR prototype as the transmitter and two types of receivers; an Agilent 89600 vector signal analyzer and a custom wideband receiver, with 36 and 75 MHz of maximum bandwidth, respectively. Furthermore, we present simulation results from a realistic MATLAB-Simulink model of the entire WINeR system to observe the system behavior in response to changes in various parameters. We have concluded that the 15-ch WINeR prototype, which is fabricated in a 0.5-μm standard CMOS process and consumes 4.5 mW from ±1.5 V supplies, can acquire and wirelessly transmit up to 320 k-samples/s to a 75-MHz receiver with 8.4 bits of resolution, which is equivalent to a wireless data rate of ~ 2.26 Mb/s. PMID:19497823

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

NASA Technical Reports Server (NTRS)

Akturk, Akin; Potbhare, Siddharth; Goldsman, Neil; Holloway, Michael

2012-01-01

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

A Low-Cost CMOS Programmable Temperature Switch

PubMed Central

Li, Yunlong; Wu, Nanjian

2008-01-01

A novel uncalibrated CMOS programmable temperature switch with high temperature accuracy is presented. Its threshold temperature Tth can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. A floating gate neural MOS circuit is designed to compensate automatically the threshold temperature Tth variation that results form the process tolerance. The switch circuit is implemented in a standard 0.35 μm CMOS process. The temperature switch can be programmed to perform the switch operation at 16 different threshold temperature Tths from 45—120°C with a 5°C increment. The measurement shows a good consistency in the threshold temperatures. The chip core area is 0.04 mm2 and power consumption is 3.1 μA at 3.3V power supply. The advantages of the temperature switch are low power consumption, the programmable threshold temperature and the controllable hysteresis. PMID:27879871

Wireless hydrotherapy smart suit for monitoring handicapped people

NASA Astrophysics Data System (ADS)

Correia, Jose H.; Mendes, Paulo M.

2005-02-01

This paper presents a smart suit, water impermeable, containing sensors and electronics for monitoring handicapped people at hydrotherapy sessions in swimming-pools. For integration into textiles, electronic components should be designed in a functional, robust and inexpensive way. Therefore, small-size electronics microsystems are a promising approach. The smart suit allows the monitoring of individual biometric data, such as heart rate, temperature and movement of the body. Two solutions for transmitting the data wirelessly are presented: through a low-voltage (3.0 V), low-power, CMOS RF IC (1.6 mm x 1.5 mm size dimensions) operating at 433 MHz, with ASK modulation and a patch antenna built on lossy substrates compatible with integrated circuits fabrication. Two different substrates were used for antenna implementation: high-resistivity silicon (HRS) and Corning Pyrex #7740 glass. The antenna prototypes were built to operate close to the 5 GHz ISM band. They operate at a center frequency of 5.705 GHz (HRS) and 5.995 GHz (Pyrex). The studied parameters were: substrate thickness, substrate losses, oxide thickness, metal conductivity and thickness. The antenna on HRS uses an area of 8 mm2, providing a 90 MHz bandwidth and ~0.3 dBi of gain. On a glass substrate, the antenna uses 12 mm2, provides 100 MHz bandwidth and ~3 dBi of gain.

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology.

PubMed

Malits, Maria; Nemirovsky, Yael

2017-07-29

This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip area, have low power consumption, and exhibit linearity and high sensitivity over the entire temperature range. However, the diode's sensitivity to temperature variations in CMOS-SOI technology is highly dependent on the diode's perimeter; hence, a careful calibration for each fabrication process is needed. In contrast, the short thermal time constant of the electrons in the transistor's channel enables measuring the instantaneous heating of the channel and to determine the local true temperature of the transistor. This allows accurate "on-line" temperature sensing while no additional calibration is needed. In addition, the noise measurements indicate that the diode's small area and perimeter causes a high 1/ f noise in all measured bias currents. This is a severe drawback for the sensor accuracy when using the sensor as a thermal sensor; hence, CMOS-SOI transistors are a better choice for temperature sensing.

Transmission of wireless neural signals through a 0.18 µm CMOS low-power amplifier.

PubMed

Gazziro, M; Braga, C F R; Moreira, D A; Carvalho, A C P L F; Rodrigues, J F; Navarro, J S; Ardila, J C M; Mioni, D P; Pessatti, M; Fabbro, P; Freewin, C; Saddow, S E

2015-01-01

In the field of Brain Machine Interfaces (BMI) researchers still are not able to produce clinically viable solutions that meet the requirements of long-term operation without the use of wires or batteries. Another problem is neural compatibility with the electrode probes. One of the possible ways of approaching these problems is the use of semiconductor biocompatible materials (silicon carbide) combined with an integrated circuit designed to operate with low power consumption. This paper describes a low-power neural signal amplifier chip, named Cortex, fabricated using 0.18 μm CMOS process technology with all electronics integrated in an area of 0.40 mm(2). The chip has 4 channels, total power consumption of only 144 μW, and is impedance matched to silicon carbide biocompatible electrodes.

Design and implementation of a low-power SOI CMOS receiver

NASA Astrophysics Data System (ADS)

Zencir, Ertan

There is a strong demand for wireless communications in civilian and military applications, and space explorations. This work attempts to implement a low-power, high-performance fully-integrated receiver for deep space communications using Silicon on Insulator (SOI) CMOS technology. Design and implementation of a UHF low-IF receiver front-end in a 0.35-mum SOI CMOS technology are presented. Problems and challenges in implementing a highly integrated receiver at UHF are identified. Low-IF architecture, suitable for low-power design, has been adopted to mitigate the noise at the baseband. Design issues of the receiver building blocks including single-ended and differential LNA's, passive and active mixers, and variable gain/bandwidth complex filters are discussed. The receiver is designed to have a variable conversion gain of more than 100 dB with a 70 dB image rejection and a power dissipation of 45 mW from a 2.5-V supply. Design and measured performance of the LNA's, and the mixer are presented. Measurement results of RF front-end blocks including a single-ended LNA, a differential LNA, and a double-balanced mixer demonstrate the low power realizability of RF front-end circuits in SOI CMOS technology. We also report on the design and simulation of the image-rejecting complex IF filter and the full receiver circuit. Gain, noise, and linearity performance of the receiver components prove the viability of fully integrated low-power receivers in SOI CMOS technology.

High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and InGaZnO complementary circuits with a temperature sensor.

PubMed

Honda, Wataru; Harada, Shingo; Ishida, Shohei; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-08-26

A vertically integrated inorganic-based flexible complementary metal-oxide-semiconductor (CMOS) inverter with a temperature sensor with a high inverter gain of ≈50 and a low power consumption of <7 nW mm(-1) is demonstrated using a layer-by-layer assembly process. In addition, the negligible influence of the mechanical flexibility on the performance of the CMOS inverter and the temperature dependence of the CMOS inverter characteristics are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An Autonomous Wireless Sensor Node With Asynchronous ECG Monitoring in 0.18 μ m CMOS.

PubMed

Mansano, Andre L; Li, Yongjia; Bagga, Sumit; Serdijn, Wouter A

2016-06-01

The design of a 13.56 MHz/402 MHz autonomous wireless sensor node with asynchronous ECG monitoring for near field communication is presented. The sensor node consists of an RF energy harvester (RFEH), a power management unit, an ECG readout, a data encoder and an RF backscattering transmitter. The energy harvester supplies the system with 1.25 V and offers a power conversion efficiency of 19% from a -13 dBm RF source at 13.56 MHz. The power management unit regulates the output voltage of the RFEH to supply the ECG readout with VECG = 0.95 V and the data encoder with VDE = 0.65 V . The ECG readout comprises an analog front-end (low noise amplifier and programmable voltage to current converter) and an asynchronous level crossing ADC with 8 bits resolution. The ADC output is encoded by a pulse generator that drives a backscattering transmitter at 402 MHz. The total power consumption of the sensor node circuitry is 9.7 μ W for a data rate of 90 kb/s and a heart rate of 70 bpm. The chip has been designed in a 0.18 μm CMOS process and shows superior RF input power sensitivity and lower power consumption when compared to previous works.

Development of CMOS MEMS inductive type tactile sensor with the integration of chrome steel ball force interface

NASA Astrophysics Data System (ADS)

Yeh, Sheng-Kai; Chang, Heng-Chung; Fang, Weileun

2018-04-01

This study presents an inductive tactile sensor with a chrome steel ball sensing interface based on the commercially available standard complementary metal-oxide-semiconductor (CMOS) process (the TSMC 0.18 µm 1P6M CMOS process). The tactile senor has a deformable polymer layer as the spring of the device and no fragile suspended thin film structures are required. As a tactile force is applied on the chrome steel ball, the polymer would deform. The distance between the chrome steel ball and the sensing coil would changed. Thus, the tactile force can be detected by the inductance change of the sensing coil. In short, the chrome steel ball acts as a tactile bump as well as the sensing interface. Experimental results show that the proposed inductive tactile sensor has a sensing range of 0-1.4 N with a sensitivity of 9.22(%/N) and nonlinearity of 2%. Preliminary wireless sensing test is also demonstrated. Moreover, the influence of the process and material issues on the sensor performances have also been investigated.

Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

NASA Astrophysics Data System (ADS)

Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

2016-02-01

Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal radiation sensing and cryogenic terahertz radiation sensing.

Design and fabrication of a CMOS-compatible MHP gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ying; Yu, Jun, E-mail: junyu@dlut.edu.cn; Wu, Hao

2014-03-15

A novel micro-hotplate (MHP) gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO{sub 2} film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperaturemore » in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3%) in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.« less

Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

NASA Astrophysics Data System (ADS)

Schatz, A.; Pantel, D.; Hanemann, T.

2017-09-01

Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology

PubMed Central

Malits, Maria; Nemirovsky, Yael

2017-01-01

This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip area, have low power consumption, and exhibit linearity and high sensitivity over the entire temperature range. However, the diode’s sensitivity to temperature variations in CMOS-SOI technology is highly dependent on the diode’s perimeter; hence, a careful calibration for each fabrication process is needed. In contrast, the short thermal time constant of the electrons in the transistor’s channel enables measuring the instantaneous heating of the channel and to determine the local true temperature of the transistor. This allows accurate “on-line” temperature sensing while no additional calibration is needed. In addition, the noise measurements indicate that the diode’s small area and perimeter causes a high 1/f noise in all measured bias currents. This is a severe drawback for the sensor accuracy when using the sensor as a thermal sensor; hence, CMOS-SOI transistors are a better choice for temperature sensing. PMID:28758932

A Power-Efficient Wireless System With Adaptive Supply Control for Deep Brain Stimulation.

PubMed

Lee, Hyung-Min; Park, Hangue; Ghovanloo, Maysam

2013-09-01

A power-efficient wireless stimulating system for a head-mounted deep brain stimulator (DBS) is presented. A new adaptive rectifier generates a variable DC supply voltage from a constant AC power carrier utilizing phase control feedback, while achieving high AC-DC power conversion efficiency (PCE) through active synchronous switching. A current-controlled stimulator adopts closed-loop supply control to automatically adjust the stimulation compliance voltage by detecting stimulation site potentials through a voltage readout channel, and improve the stimulation efficiency. The stimulator also utilizes closed-loop active charge balancing to maintain the residual charge at each site within a safe limit, while receiving the stimulation parameters wirelessly from the amplitude-shift-keyed power carrier. A 4-ch wireless stimulating system prototype was fabricated in a 0.5-μm 3M2P standard CMOS process, occupying 2.25 mm². With 5 V peak AC input at 2 MHz, the adaptive rectifier provides an adjustable DC output between 2.5 V and 4.6 V at 2.8 mA loading, resulting in measured PCE of 72 ~ 87%. The adaptive supply control increases the stimulation efficiency up to 30% higher than a fixed supply voltage to 58 ~ 68%. The prototype wireless stimulating system was verified in vitro .

A Power-Efficient Wireless System With Adaptive Supply Control for Deep Brain Stimulation

PubMed Central

Lee, Hyung-Min; Park, Hangue; Ghovanloo, Maysam

2014-01-01

A power-efficient wireless stimulating system for a head-mounted deep brain stimulator (DBS) is presented. A new adaptive rectifier generates a variable DC supply voltage from a constant AC power carrier utilizing phase control feedback, while achieving high AC-DC power conversion efficiency (PCE) through active synchronous switching. A current-controlled stimulator adopts closed-loop supply control to automatically adjust the stimulation compliance voltage by detecting stimulation site potentials through a voltage readout channel, and improve the stimulation efficiency. The stimulator also utilizes closed-loop active charge balancing to maintain the residual charge at each site within a safe limit, while receiving the stimulation parameters wirelessly from the amplitude-shift-keyed power carrier. A 4-ch wireless stimulating system prototype was fabricated in a 0.5-μm 3M2P standard CMOS process, occupying 2.25 mm². With 5 V peak AC input at 2 MHz, the adaptive rectifier provides an adjustable DC output between 2.5 V and 4.6 V at 2.8 mA loading, resulting in measured PCE of 72 ~ 87%. The adaptive supply control increases the stimulation efficiency up to 30% higher than a fixed supply voltage to 58 ~ 68%. The prototype wireless stimulating system was verified in vitro. PMID:24678126

Measuring the Temperature of the Ithaca College MOT Cloud using a CMOS Camera

NASA Astrophysics Data System (ADS)

Smucker, Jonathan; Thompson, Bruce

2015-03-01

We present our work on measuring the temperature of Rubidium atoms cooled using a magneto-optical trap (MOT). The MOT uses laser trapping methods and Doppler cooling to trap and cool Rubidium atoms to form a cloud that is visible to a CMOS Camera. The Rubidium atoms are cooled further using optical molasses cooling after they are released from the trap (by removing the magnetic field). In order to measure the temperature of the MOT we take pictures of the cloud using a CMOS camera as it expands and calculate the temperature based on the free expansion of the cloud. Results from the experiment will be presented along with a summary of the method used.

Fully CMOS-compatible titanium nitride nanoantennas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Briggs, Justin A., E-mail: jabriggs@stanford.edu; Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305; Naik, Gururaj V.

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements onmore » plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.« less

A 380pW Dual Mode Optical Wake-up Receiver with Ambient Noise Cancellation.

PubMed

Lim, Wootaek; Jang, Taekwang; Lee, Inhee; Kim, Hun-Seok; Sylvester, Dennis; Blaauw, David

2016-06-01

We present a sub-nW optical wake-up receiver for wireless sensor nodes. The wake-up receiver supports dual mode operation for both ultra-low standby power and high data rates, while canceling ambient in-band noise. In 0.18µm CMOS the receiver consumes 380pW in always-on wake-up mode and 28.1µW in fast RX mode at 250kbps.

A 380pW Dual Mode Optical Wake-up Receiver with Ambient Noise Cancellation

PubMed Central

Lim, Wootaek; Jang, Taekwang; Lee, Inhee; Kim, Hun-Seok; Sylvester, Dennis; Blaauw, David

2016-01-01

We present a sub-nW optical wake-up receiver for wireless sensor nodes. The wake-up receiver supports dual mode operation for both ultra-low standby power and high data rates, while canceling ambient in-band noise. In 0.18µm CMOS the receiver consumes 380pW in always-on wake-up mode and 28.1µW in fast RX mode at 250kbps. PMID:28392978

A Fully Integrated Wireless Compressed Sensing Neural Signal Acquisition System for Chronic Recording and Brain Machine Interface.

PubMed

Liu, Xilin; Zhang, Milin; Xiong, Tao; Richardson, Andrew G; Lucas, Timothy H; Chin, Peter S; Etienne-Cummings, Ralph; Tran, Trac D; Van der Spiegel, Jan

2016-07-18

Reliable, multi-channel neural recording is critical to the neuroscience research and clinical treatment. However, most hardware development of fully integrated, multi-channel wireless neural recorders to-date, is still in the proof-of-concept stage. To be ready for practical use, the trade-offs between performance, power consumption, device size, robustness, and compatibility need to be carefully taken into account. This paper presents an optimized wireless compressed sensing neural signal recording system. The system takes advantages of both custom integrated circuits and universal compatible wireless solutions. The proposed system includes an implantable wireless system-on-chip (SoC) and an external wireless relay. The SoC integrates 16-channel low-noise neural amplifiers, programmable filters and gain stages, a SAR ADC, a real-time compressed sensing module, and a near field wireless power and data transmission link. The external relay integrates a 32 bit low-power microcontroller with Bluetooth 4.0 wireless module, a programming interface, and an inductive charging unit. The SoC achieves high signal recording quality with minimized power consumption, while reducing the risk of infection from through-skin connectors. The external relay maximizes the compatibility and programmability. The proposed compressed sensing module is highly configurable, featuring a SNDR of 9.78 dB with a compression ratio of 8×. The SoC has been fabricated in a 180 nm standard CMOS technology, occupying 2.1 mm × 0.6 mm silicon area. A pre-implantable system has been assembled to demonstrate the proposed paradigm. The developed system has been successfully used for long-term wireless neural recording in freely behaving rhesus monkey.

Wireless Amperometric Neurochemical Monitoring Using an Integrated Telemetry Circuit

PubMed Central

Roham, Masoud; Halpern, Jeffrey M.; Martin, Heidi B.; Chiel, Hillel J.

2015-01-01

An integrated circuit for wireless real-time monitoring of neurochemical activity in the nervous system is described. The chip is capable of conducting high-resolution amperometric measurements in four settings of the input current. The chip architecture includes a first-order ΔΣ modulator (ΔΣM) and a frequency-shift-keyed (FSK) voltage-controlled oscillator (VCO) operating near 433 MHz. It is fabricated using the AMI 0.5 μm double-poly triple-metal n-well CMOS process, and requires only one off-chip component for operation. Measured dc current resolutions of ~250 fA, ~1.5 pA, ~4.5 pA, and ~17 pA were achieved for input currents in the range of ±5, ±37, ±150, and ±600 nA, respectively. The chip has been interfaced with a diamond-coated, quartz-insulated, microneedle, tungsten electrode, and successfully recorded dopamine concentration levels as low as 0.5 μM wirelessly over a transmission distance of ~0.5 m in flow injection analysis experiments. PMID:18990633

Wireless amperometric neurochemical monitoring using an integrated telemetry circuit.

PubMed

Roham, Masoud; Halpern, Jeffrey M; Martin, Heidi B; Chiel, Hillel J; Mohseni, Pedram

2008-11-01

An integrated circuit for wireless real-time monitoring of neurochemical activity in the nervous system is described. The chip is capable of conducting high-resolution amperometric measurements in four settings of the input current. The chip architecture includes a first-order Delta Sigma modulator (Delta Sigma M) and a frequency-shift-keyed (FSK) voltage-controlled oscillator (VCO) operating near 433 MHz. It is fabricated using the AMI 0.5 microm double-poly triple-metal n-well CMOS process, and requires only one off-chip component for operation. Measured dc current resolutions of approximately 250 fA, approximately 1.5 pA, approximately 4.5 pA, and approximately 17 pA were achieved for input currents in the range of +/-5, +/-37, +/-150, and +/-600 nA, respectively. The chip has been interfaced with a diamond-coated, quartz-insulated, microneedle, tungsten electrode, and successfully recorded dopamine concentration levels as low as 0.5 microM wirelessly over a transmission distance of approximately 0.5 m in flow injection analysis experiments.

A 0.9-V 12-bit 40-MSPS Pipeline ADC for Wireless Receivers

NASA Astrophysics Data System (ADS)

Ito, Tomohiko; Itakura, Tetsuro

A 0.9-V 12-bit 40-MSPS pipeline ADC with I/Q amplifier sharing technique is presented for wireless receivers. To achieve high linearity even at 0.9-V supply, the clock signals to sampling switches are boosted over 0.9V in conversion stages. The clock-boosting circuit for lifting these clocks is shared between I-ch ADC and Q-ch ADC, reducing the area penalty. Low supply voltage narrows the available output range of the operational amplifier. A pseudo-differential (PD) amplifier with two-gain-stage common-mode feedback (CMFB) is proposed in views of its wide output range and power efficiency. This ADC is fabricated in 90-nm CMOS technology. At 40MS/s, the measured SNDR is 59.3dB and the corresponding effective number of bits (ENOB) is 9.6. Until Nyquist frequency, the ENOB is kept over 9.3. The ADC dissipates 17.3mW/ch, whose performances are suitable for ADCs for mobile wireless systems such as WLAN/WiMAX.

A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

DTIC Science & Technology

2014-01-01

ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

Differential wide temperature range CMOS interface circuit for capacitive MEMS pressure sensors.

PubMed

Wang, Yucai; Chodavarapu, Vamsy P

2015-02-12

We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between -55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology with 2.5 V power supply. A constant-gm biasing technique is used to mitigate performance degradation at high temperatures. The circuit offers the flexibility to interface with MEMS sensors with a wide range of the steady-state capacitance values from 0.5 pF to 10 pF. Simulation results show that the circuitry has excellent linearity and stability over the wide temperature range. Experimental results confirm that the temperature effects on the circuitry are small, with an overall linearity error around 2%.

Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors

PubMed Central

Wang, Yucai; Chodavarapu, Vamsy P.

2015-01-01

We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology with 2.5 V power supply. A constant-gm biasing technique is used to mitigate performance degradation at high temperatures. The circuit offers the flexibility to interface with MEMS sensors with a wide range of the steady-state capacitance values from 0.5 pF to 10 pF. Simulation results show that the circuitry has excellent linearity and stability over the wide temperature range. Experimental results confirm that the temperature effects on the circuitry are small, with an overall linearity error around 2%. PMID:25686312

Accelerated life testing effects on CMOS microcircuit characteristics

NASA Technical Reports Server (NTRS)

1979-01-01

Modifications and additions to the present process of making CMOS microcircuits which are designed to provide protective layers on the chip to guard against moisture and contaminants were investigated. High and low temperature Si3N4 protective layers were tested on the CMOS microcircuits and no conclusive improvements in device reliability characteristics were evidenced.

Design and realization of temperature measurement system based on optical fiber temperature sensor for wireless power transfer

NASA Astrophysics Data System (ADS)

Chen, Xi; Zeng, Shuang; Liu, Xiulan; Jin, Yuan; Li, Xianglong; Wang, Xiaochen

2018-02-01

The electric vehicles (EV) have become accepted by increasing numbers of people for the environmental-friendly advantages. A novel way to charge the electric vehicles is through wireless power transfer (WPT). The wireless power transfer is a high power transfer system. The high currents flowing through the transmitter and receiver coils increasing temperature affects the safety of person and charging equipment. As a result, temperature measurement for wireless power transfer is needed. In this paper, a temperature measurement system based on optical fiber temperature sensors for electric vehicle wireless power transfer is proposed. Initially, the thermal characteristics of the wireless power transfer system are studied and the advantages of optical fiber sensors are analyzed. Then the temperature measurement system based on optical fiber temperature sensor is designed. The system consists of optical subsystem, data acquisition subsystem and data processing subsystem. Finally, the system is tested and the experiment result shows that the system can realize 1°C precision and can acquire real-time temperature distribution of the coils, which can meet the requirement of the temperature measuring for wireless power transfer.

A Fully Integrated Quartz MEMS VHF TCXO.

PubMed

Kubena, Randall L; Stratton, Frederic P; Nguyen, Hung D; Kirby, Deborah J; Chang, David T; Joyce, Richard J; Yong, Yook-Kong; Garstecki, Jeffrey F; Cross, Matthew D; Seman, S E

2018-06-01

We report on a 32-MHz quartz temperature compensated crystal oscillator (TCXO) fully integrated with commercial CMOS electronics and vacuum packaged at wafer level using a low-temperature MEMS-after quartz process. The novel quartz resonator design provides for stress isolation from the CMOS substrate, thereby yielding classical AT-cut f/T profiles and low hysteresis which can be compensated to < ±0.2 parts per million over temperature using on-chip third-order compensation circuitry. The TCXO operates at low power of 2.5 mW and can be thinned to as part of the wafer-level eutectic encapsulation. Full integration with large state-of-the-art CMOS wafers is possible using carrier wafer techniques.

Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

PubMed

Malits, Maria; Brouk, Igor; Nemirovsky, Yael

2018-05-19

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

Embedded neural recording with TinyOS-based wireless-enabled processor modules.

PubMed

Farshchi, Shahin; Pesterev, Aleksey; Nuyujukian, Paul; Guenterberg, Eric; Mody, Istvan; Judy, Jack W

2010-04-01

To create a wireless neural recording system that can benefit from the continuous advancements being made in embedded microcontroller and communications technologies, an embedded-system-based architecture for wireless neural recording has been designed, fabricated, and tested. The system consists of commercial-off-the-shelf wireless-enabled processor modules (motes) for communicating the neural signals, and a back-end database server and client application for archiving and browsing the neural signals. A neural-signal-acquisition application has been developed to enable the mote to either acquire neural signals at a rate of 4000 12-bit samples per second, or detect and transmit spike heights and widths sampled at a rate of 16670 12-bit samples per second on a single channel. The motes acquire neural signals via a custom low-noise neural-signal amplifier with adjustable gain and high-pass corner frequency that has been designed, and fabricated in a 1.5-microm CMOS process. In addition to browsing acquired neural data, the client application enables the user to remotely toggle modes of operation (real-time or spike-only), as well as amplifier gain and high-pass corner frequency.

The rectenna design on contact lens for wireless powering of the active intraocular pressure monitoring system.

PubMed

Cheng, H W; Jeng, B M; Chen, C Y; Huang, H Y; Chiou, J C; Luo, C H

2013-01-01

This paper proposed a wireless power harvesting system with micro-electro-mechanical-systems (MEMS) fabrication for noninvasive intraocular pressure (IOP) measurement on soft contact lens substructure. The power harvesting IC consists of a loop antenna, an impedance matching network and a rectifier. The proposed IC has been designed and fabricated by CMOS 0.18 um process that operates at the ISM band of 5.8 GHz. The antenna and the power harvesting IC would be bonded together by using flip chip bonding technologies without extra wire interference. The circuit utilized an impedance transformation circuit to boost the input RF signal that improves the circuit performance. The proposed design achieves an RF-to-DC conversion efficiency of 35% at 5.8 GHz.

A 0.5 cm(3) four-channel 1.1 mW wireless biosignal interface with 20 m range.

PubMed

Morrison, Tim; Nagaraju, Manohar; Winslow, Brent; Bernard, Amy; Otis, Brian P

2014-02-01

This paper presents a self-contained, single-chip biosignal monitoring system with wireless programmability and telemetry interface suitable for mainstream healthcare applications. The system consists of low-noise front end amplifiers, ADC, MICS/ISM transmitter and infrared programming capability to configure the state of the chip. An on-chip packetizer ensures easy pairing with standard off-the-shelf receivers. The chip is realized in the IBM 130 nm CMOS process with an area of 2×2 mm(2). The entire system consumes 1.07 mW from a 1.2 V supply. It weighs 0.6 g including a zinc-air battery. The system has been extensively tested in in vivo biological experiments and requires minimal human interaction or calibration.

A low power wearable transceiver for human body communication.

PubMed

Huang, Jin; Chen, Lian-Kang; Zhang, Yuan-Ting

2009-01-01

This paper reports a low power transceiver designed for wearable medical healthcare system. Based on a novel energy-efficient wideband wireless communication scheme that uses human body as a transmission medium, the transceiver can achieve a maximum 15 Mbps data rate with total receiver sensitivity of -30 dBm. The chip measures only 0.56 mm(2) and was fabricated in the SMIC 0.18um 1P6M RF CMOS process. The RX consumes 5mW and TX dissipates 1mW with delivering power up to 10uW, which is suitable for the body area network short range application. Real-time medical information collecting through the human body is fully simulated. Architecture of the chip together with the detail characterizes from its wireless analog front-end are presented.

Radiation Tolerance of 65nm CMOS Transistors

DOE PAGES

Krohn, M.; Bentele, B.; Christian, D. C.; ...

2015-12-11

We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks.

PubMed

Hou, Bing; Chen, Hua; Wang, Zhiyu; Mo, Jiongjiong; Chen, Junli; Yu, Faxin; Wang, Wenbo

2017-01-24

In this paper, a low power transceiver for wireless sensor networks (WSN) is proposed. The system is designed with fully functional blocks including a receiver, a fractional-N frequency synthesizer, and a class-E transmitter, and it is optimized with a good balance among output power, sensitivity, power consumption, and silicon area. A transmitter and receiver (TX-RX) shared input-output matching network is used so that only one off-chip inductor is needed in the system. The power and area efficiency-oriented, fully-integrated frequency synthesizer is able to provide programmable output frequencies in the 2.4 GHz range while occupying a small silicon area. Implemented in a standard 0.18 μm RF Complementary Metal Oxide Semiconductor (CMOS) technology, the whole transceiver occupies a chip area of 0.5 mm² (1.2 mm² including bonding pads for a QFN package). Measurement results suggest that the design is able to work at amplitude shift keying (ASK)/on-off-keying (OOK) and FSK modes with up to 500 kbps data rate. With an input sensitivity of -60 dBm and an output power of 3 dBm, the receiver, transmitter and frequency synthesizer consumes 2.3 mW, 4.8 mW, and 3.9 mW from a 1.8 V supply voltage, respectively.

Single-chip fully integrated direct-modulation CMOS RF transmitters for short-range wireless applications.

PubMed

El-Desouki, Munir M; Qasim, Syed Manzoor; BenSaleh, Mohammed; Deen, M Jamal

2013-08-02

Ultra-low power radio frequency (RF) transceivers used in short-range application such as wireless sensor networks (WSNs) require efficient, reliable and fully integrated transmitter architectures with minimal building blocks. This paper presents the design, implementation and performance evaluation of single-chip, fully integrated 2.4 GHz and 433 MHz RF transmitters using direct-modulation power voltage-controlled oscillators (PVCOs) in addition to a 2.0 GHz phase-locked loop (PLL) based transmitter. All three RF transmitters have been fabricated in a standard mixed-signal CMOS 0.18 µm technology. Measurement results of the 2.4 GHz transmitter show an improvement in drain efficiency from 27% to 36%. The 2.4 GHz and 433 MHz transmitters deliver an output power of 8 dBm with a phase noise of -122 dBc/Hz at 1 MHz offset, while drawing 15.4 mA of current and an output power of 6.5 dBm with a phase noise of -120 dBc/Hz at 1 MHz offset, while drawing 20.8 mA of current from 1.5 V power supplies, respectively. The PLL transmitter delivers an output power of 9 mW with a locking range of 128 MHz and consumes 26 mA from 1.8 V power supply. The experimental results demonstrate that the RF transmitters can be efficiently used in low power WSN applications.

Design of 5.8 GHz Integrated Antenna on 180nm Complementary Metal Oxide Semiconductor (CMOS) Technology

NASA Astrophysics Data System (ADS)

Razak, A. H. A.; Shamsuddin, M. I. A.; Idros, M. F. M.; Halim, A. K.; Ahmad, A.; Junid, S. A. M. Al

2018-03-01

This project discusses the design and simulation performances of integrated loop antenna. Antenna is one of the main parts in any wireless radio frequency integrated circuit (RFIC). Naturally, antenna is the bulk in any RFIC design. Thus, this project aims to implement an integrated antenna on a single chip making the end product more compact. This project targets 5.8 GHz as the operating frequency of the integrated antenna for a transceiver module based on Silterra CMOS 180nm technology. The simulation of the antenna was done by using High Frequency Structure Simulator (HFSS). This software is industrial standard software that been used to simulate all electromagnetic effect including antenna simulation. This software has ability to simulate frequency at range of 100 MHz to 4 THz. The simulation set up in 3 dimension structure with driven terminal. The designed antenna has 1400um of diameter and placed on top metal layer. Loop configuration of the antenna has been chosen as the antenna design. From the configuration, it is able to make the chip more compact. The simulation shows that the antenna has single frequency band at center frequency 5.8 GHz with -48.93dB. The antenna radiation patterns shows, the antenna radiate at omnidirectional. From the simulation result, it could be concluded that the antenna have a good radiation pattern and propagation for wireless communication.

Large-area low-temperature ultrananocrystaline diamond (UNCD) films and integration with CMOS devices for monolithically integrated diamond MEMD/NEMS-CMOS systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sumant, A.V.; Auciello, O.; Yuan, H.-C

2009-05-01

Because of exceptional mechanical, chemical, and tribological properties, diamond has a great potential to be used as a material for the development of high-performance MEMS and NEMS such as resonators and switches compatible with harsh environments, which involve mechanical motion and intermittent contact. Integration of such MEMS/NEMS devices with complementary metal oxide semiconductor (CMOS) microelectronics will provide a unique platform for CMOS-driven commercial MEMS/NEMS. The main hurdle to achieve diamond-CMOS integration is the relatively high substrate temperatures (600-800 C) required for depositing conventional diamond thin films, which are well above the CMOS operating thermal budget (400 C). Additionally, a materialsmore » integration strategy has to be developed to enable diamond-CMOS integration. Ultrananocrystalline diamond (UNCD), a novel material developed in thin film form at Argonne, is currently the only microwave plasma chemical vapor deposition (MPCVD) grown diamond film that can be grown at 400 C, and still retain exceptional mechanical, chemical, and tribological properties comparable to that of single crystal diamond. We have developed a process based on MPCVD to synthesize UNCD films on up to 200 mm in diameter CMOS wafers, which will open new avenues for the fabrication of monolithically integrated CMOS-driven MEMS/NEMS based on UNCD. UNCD films were grown successfully on individual Si-based CMOS chips and on 200 mm CMOS wafers at 400 C in a MPCVD system, using Ar-rich/CH4 gas mixture. The CMOS devices on the wafers were characterized before and after UNCD deposition. All devices were performing to specifications with very small degradation after UNCD deposition and processing. A threshold voltage degradation in the range of 0.08-0.44V and transconductance degradation in the range of 1.5-9% were observed.« less

A multi-channel low-power system-on-chip for single-unit recording and narrowband wireless transmission of neural signal.

PubMed

Bonfanti, A; Ceravolo, M; Zambra, G; Gusmeroli, R; Spinelli, A S; Lacaita, A L; Angotzi, G N; Baranauskas, G; Fadiga, L

2010-01-01

This paper reports a multi-channel neural recording system-on-chip (SoC) with digital data compression and wireless telemetry. The circuit consists of a 16 amplifiers, an analog time division multiplexer, an 8-bit SAR AD converter, a digital signal processor (DSP) and a wireless narrowband 400-MHz binary FSK transmitter. Even though only 16 amplifiers are present in our current die version, the whole system is designed to work with 64 channels demonstrating the feasibility of a digital processing and narrowband wireless transmission of 64 neural recording channels. A digital data compression, based on the detection of action potentials and storage of correspondent waveforms, allows the use of a 1.25-Mbit/s binary FSK wireless transmission. This moderate bit-rate and a low frequency deviation, Manchester-coded modulation are crucial for exploiting a narrowband wireless link and an efficient embeddable antenna. The chip is realized in a 0.35- εm CMOS process with a power consumption of 105 εW per channel (269 εW per channel with an extended transmission range of 4 m) and an area of 3.1 × 2.7 mm(2). The transmitted signal is captured by a digital TV tuner and demodulated by a wideband phase-locked loop (PLL), and then sent to a PC via an FPGA module. The system has been tested for electrical specifications and its functionality verified in in-vivo neural recording experiments.

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

NASA Astrophysics Data System (ADS)

Dickson, T. O.; Lacroix, M.-A.; Boret, S.; Gloria, D.; Beerkens, R.; Voinigescu, S. P.

2005-01-01

Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S21 of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 μm × 30 μm) than planar transformers or microstrip couplers. A compact inductor model is described, along with a methodology for extracting model parameters from simulated or measured y-parameters. Millimeter-wave SiGe BiCMOS mixer and voltage-controlled-oscillator circuits employing spiral inductors are presented with better or comparable performance to previously reported transmission-line-based circuits.

The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments

NASA Astrophysics Data System (ADS)

Li, Ying; Niu, Guofu; Cressler, John D.; Patel, Jagdish; Liu, S. T.; Reed, Robert A.; Mojarradi, Mohammad M.; Blalock, Benjamin J.

2003-06-01

We evaluate the usefulness of partially depleted SOI CMOS devices fabricated in a 0.35 μm technology on UNIBOND material for electronics applications requiring robust operation under extreme environment conditions consisting of low and/or high temperature, and under substantial radiation exposure. The threshold voltage, effective mobility, and the impact ionization parameters were determined across temperature for both the nFETs and the pFETs. The radiation response was characterized using threshold voltage shifts of both the front-gate and back-gate transistors. These results suggest that this 0.35 μm partially depleted SOI CMOS technology is suitable for operation across a wide range of extreme environment conditions consisting of: cryogenic temperatures down to 86 K, elevated temperatures up to 573 K, and under radiation exposure to 1.3 Mrad(Si) total dose.

Power-rate-distortion analysis for wireless video communication under energy constraint

NASA Astrophysics Data System (ADS)

He, Zhihai; Liang, Yongfang; Ahmad, Ishfaq

2004-01-01

In video coding and streaming over wireless communication network, the power-demanding video encoding operates on the mobile devices with limited energy supply. To analyze, control, and optimize the rate-distortion (R-D) behavior of the wireless video communication system under the energy constraint, we need to develop a power-rate-distortion (P-R-D) analysis framework, which extends the traditional R-D analysis by including another dimension, the power consumption. Specifically, in this paper, we analyze the encoding mechanism of typical video encoding systems and develop a parametric video encoding architecture which is fully scalable in computational complexity. Using dynamic voltage scaling (DVS), a hardware technology recently developed in CMOS circuits design, the complexity scalability can be translated into the power consumption scalability of the video encoder. We investigate the rate-distortion behaviors of the complexity control parameters and establish an analytic framework to explore the P-R-D behavior of the video encoding system. Both theoretically and experimentally, we show that, using this P-R-D model, the encoding system is able to automatically adjust its complexity control parameters to match the available energy supply of the mobile device while maximizing the picture quality. The P-R-D model provides a theoretical guideline for system design and performance optimization in wireless video communication under energy constraint, especially over the wireless video sensor network.

Automated alignment system for optical wireless communication systems using image recognition.

PubMed

Brandl, Paul; Weiss, Alexander; Zimmermann, Horst

2014-07-01

In this Letter, we describe the realization of a tracked line-of-sight optical wireless communication system for indoor data distribution. We built a laser-based transmitter with adaptive focus and ray steering by a microelectromechanical systems mirror. To execute the alignment procedure, we used a CMOS image sensor at the transmitter side and developed an algorithm for image recognition to localize the receiver's position. The receiver is based on a self-developed optoelectronic integrated chip with low requirements on the receiver optics to make the system economically attractive. With this system, we were able to set up the communication link automatically without any back channel and to perform error-free (bit error rate <10⁻⁹) data transmission over a distance of 3.5 m with a data rate of 3 Gbit/s.

55-mW, 1.2-V, 12-bit, 100-MSPS Pipeline ADCs for Wireless Receivers

NASA Astrophysics Data System (ADS)

Ito, Tomohiko; Kurose, Daisuke; Ueno, Takeshi; Yamaji, Takafumi; Itakura, Tetsuro

For wireless receivers, low-power 1.2-V 12-bit 100-MSPS pipeline ADCs are fabricated in 90-nm CMOS technology. To achieve low-power dissipation at 1.2V without the degradation of SNR, the configuration of 2.5bit/stage is employed with an I/Q amplifier sharing technique. Furthermore, single-stage pseudo-differential amplifiers are used in a Sample-and-Hold (S/H) circuit and a 1st Multiplying Digital-to-Analog Converter (MDAC). The pseudo-differential amplifier with two-gain-stage transimpedance gain-boosting amplifiers realizes high DC gain of more than 90dB with low power. The measured SNR of the 100-MSPS ADC is 66.7dB at 1.2-V supply. Under that condition, each ADC dissipates only 55mW.

Wearable system-on-a-chip UWB radar for health care and its application to the safety improvement of emergency operators.

PubMed

Zito, Domenico; Pepe, Domenico; Neri, Bruno; De Rossi, Danilo; Lanatà, Antonio; Tognetti, Alessandro; Scilingo, Enzo Pasquale

2007-01-01

A new wearable system-on-a-chip UWB radar for health care systems is presented. The idea and its applications to the safety improvement of emergency operators are discussed. The system consists of a wearable wireless interface including a fully integrated UWB radar for the detection of the heart beat and breath rates, and a IEEE 802.15.4 ZigBee radio interface. The principle of operation of the UWB radar for the monitoring of the heart wall is explained hereinafter. The results obtained by the feasibility study regarding its implementation on a modern standard silicon technology (CMOS 90 nm) are reported, demonstrating (at simulation level) the effectiveness of such an approach and enabling the standard silicon technology for new generations of wireless sensors for heath care and safeguard wearable systems.

Demonstration of a wireless driven MEMS pond skater that uses EWOD technology

NASA Astrophysics Data System (ADS)

Mita, Y.; Li, Y.; Kubota, M.; Morishita, S.; Parkes, W.; Haworth, L. I.; Flynn, B. W.; Terry, J. G.; Tang, T.-B.; Ruthven, A. D.; Smith, S.; Walton, A. J.

2009-07-01

A silicon swimming robot or pond skating device has been demonstrated. It floats on liquid surfaces using surface tension and is capable of movement using electrowetting on dielectric (EWOD) based propulsion. Its dimensions are 6 × 9 mm and the driving mechanism involves first trapping air bubbles within the liquid onto the hydrophobic surface of the device. The air bubbles are then moved using EWOD, which provides the propulsion. The device employs a recently reported TaO EWOD technology enabling a driving voltage of ≈15 V, which is low enough for RF power transmission, thus facilitating wire-free movement. A wired version has been measured to move 1.35 mm in 168 ms (a speed of 8 mm s -1). This low voltage-EWOD (<15 V) device, fabricated using a CMOS compatible process, is believed to be the world's smallest swimming MEMS device that has no mechanical moving parts. The paper also reports results of EWOD droplet operation driven by wireless power transmission and demonstrates that such a wireless design can be successfully mounted on a floating EWOD device to produce movement.

A wireless integrated circuit for 100-channel charge-balanced neural stimulation.

PubMed

Thurgood, B K; Warren, D J; Ledbetter, N M; Clark, G A; Harrison, R R

2009-12-01

The authors present the design of an integrated circuit for wireless neural stimulation, along with benchtop and in - vivo experimental results. The chip has the ability to drive 100 individual stimulation electrodes with constant-current pulses of varying amplitude, duration, interphasic delay, and repetition rate. The stimulation is performed by using a biphasic (cathodic and anodic) current source, injecting and retracting charge from the nervous system. Wireless communication and power are delivered over a 2.765-MHz inductive link. Only three off-chip components are needed to operate the stimulator: a 10-nF capacitor to aid in power-supply regulation, a small capacitor (< 100 pF) for tuning the coil to resonance, and a coil for power and command reception. The chip was fabricated in a commercially available 0.6- mum 2P3M BiCMOS process. The chip was able to activate motor fibers to produce muscle twitches via a Utah Slanted Electrode Array implanted in cat sciatic nerve, and to activate sensory fibers to recruit evoked potentials in somatosensory cortex.

A Silicon Carbide Wireless Temperature Sensing System for High Temperature Applications

PubMed Central

Yang, Jie

2013-01-01

In this article, an extreme environment-capable temperature sensing system based on state-of-art silicon carbide (SiC) wireless electronics is presented. In conjunction with a Pt-Pb thermocouple, the SiC wireless sensor suite is operable at 450 °C while under centrifugal load greater than 1,000 g. This SiC wireless temperature sensing system is designed to be non-intrusively embedded inside the gas turbine generators, acquiring the temperature information of critical components such as turbine blades, and wirelessly transmitting the information to the receiver located outside the turbine engine. A prototype system was developed and verified up to 450 °C through high temperature lab testing. The combination of the extreme temperature SiC wireless telemetry technology and integrated harsh environment sensors will allow for condition-based in-situ maintenance of power generators and aircraft turbines in field operation, and can be applied in many other industries requiring extreme environment monitoring and maintenance. PMID:23377189

Low-power circuits design for the wireless force measurement system of the total knee arthroplasty.

PubMed

Chen, Hong; Liu, Ming; Wan, Weiyi; Jia, Chen; Zhang, Chun; Wang, Zihua

2010-01-01

This paper proposes a novel wireless force measurement system for the Total Knee Arthroplasty (TKA) to improve the ligament balancing procedure during TKA. The force measurement system is comprised of a Wireless Force Measurement Spacer (WFMS) and the display part. They communicate with each other by the Radio Frequency (RF) signal. The WFMS is designed to measure the force between the WFMS and the femoral component of the artificial implants and to transmit the force data wirelessly by a low power transceiver. The display part demonstrates the force data in 3D images in real time. The WFMS composes of a sensors array, a Universal Transducer Interfaces (UTIs) array, a low-power sub-threshold microprocessor and a transceiver. The sub-threshold 8-bit microprocessor is taped out with 0.18 microm CMOS technology. The testing results of the microprocessor show that the leakage power of 46nW and the dynamic power of 385nW@165kHz are achieved with the operating voltage of 350 mV. The test results of the system are given and the errors of the system are analyzed. The results verified the reliability of the system. The future work is to design the microprocessor and a lower power transceiver within a single chip.

Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

PubMed Central

Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

2010-01-01

This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process

NASA Astrophysics Data System (ADS)

Saleem, Amin M.; Andersson, Rickard; Desmaris, Vincent; Enoksson, Peter

2018-01-01

Complete miniaturized on-chip integrated solid-state capacitors have been fabricated based on conformal coating of vertically aligned carbon nanofibers (VACNFs), using a CMOS temperature compatible microfabrication processes. The 5 μm long VACNFs, operating as electrode, are grown on a silicon substrate and conformally coated by aluminum oxide dielectric using atomic layer deposition (ALD) technique. The areal (footprint) capacitance density value of 11-15 nF/mm2 is realized with high reproducibility. The CMOS temperature compatible microfabrication, ultra-low profile (less than 7 μm thickness) and high capacitance density would enables direct integration of micro energy storage devices on the active CMOS chip, multi-chip package and passives on silicon or glass interposer. A model is developed to calculate the surface area of VACNFs and the effective capacitance from the devices. It is thereby shown that 71% of surface area of the VACNFs has contributed to the measured capacitance, and by using the entire area the capacitance can potentially be increased.

Accelerated life testing effects on CMOS microcircuit characteristics, phase 1

NASA Technical Reports Server (NTRS)

Maximow, B.

1976-01-01

An accelerated life test of sufficient duration to generate a minimum of 50% cumulative failures in lots of CMOS devices was conducted to provide a basis for determining the consistency of activation energy at 250 C. An investigation was made to determine whether any thresholds were exceeded during the high temperature testing, which could trigger failure mechanisms unique to that temperature. The usefulness of the 250 C temperature test as a predictor of long term reliability was evaluated.

Behavioral study and design of a digital interpolator filter for wireless reconfigurable transmitters

NASA Astrophysics Data System (ADS)

Ferragina, V.; Frassone, A.; Ghittori, N.; Malcovati, P.; Vigna, A.

2005-06-01

The behavioral analysis and the design in a 0.13 μm CMOS technology of a digital interpolator filter for wireless applications are presented. The proposed block is designed to be embedded in the baseband part of a reconfigurable transmitter (WLAN 802.11a, UMTS) to operate as a sampling frequency boost between the digital signal processor (DSP) and the digital-to-analog converter (DAC). In recent trends the DAC of such transmitters usually operates at high conversion frequencies (to allow a relaxed implementation of the following analog reconstruction filter), while the DSP output flows at low frequencies (typically Nyquist rate). Thus a block able to increase the digital data rate, like the one proposed, is needed before the DAC. For example, in the WLAN case, an interpolation factor of 4 has been used, allowing the digital data frequency to raise from 20 MHz to 80 MHz. Using a time-domain model of the TX chain, a behavioral analysis has been performed to determine the impact of the filter performance on the quality of the signal at the antenna. This study has led to the evaluation of the z-domain filter transfer function, together with the specifications concerning a finite precision implementation. A VHDL description has allowed an automatic synthesis of the circuit in a 0.13 μm CMOS technology (with a supply voltage of 1.2 V). Post-synthesis simulations have confirmed the effectiveness of the proposed study.

Carbon Nanotube Integration with a CMOS Process

PubMed Central

Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

2010-01-01

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

Respiration detection chip with integrated temperature-insensitive MEMS sensors and CMOS signal processing circuits.

PubMed

Wei, Chia-Ling; Lin, Yu-Chen; Chen, Tse-An; Lin, Ren-Yi; Liu, Tin-Hao

2015-02-01

An airflow sensing chip, which integrates MEMS sensors with their CMOS signal processing circuits into a single chip, is proposed for respiration detection. Three micro-cantilever-based airflow sensors were designed and fabricated using a 0.35 μm CMOS/MEMS 2P4M mixed-signal polycide process. Two main differences were present among these three designs: they were either metal-covered or metal-free structures, and had either bridge-type or fixed-type reference resistors. The performances of these sensors were measured and compared, including temperature sensitivity and airflow sensitivity. Based on the measured results, the metal-free structure with fixed-type reference resistors is recommended for use, because it has the highest airflow sensitivity and also can effectively reduce the output voltage drift caused by temperature change.

Large-Scale Wireless Temperature Monitoring System for Liquefied Petroleum Gas Storage Tanks.

PubMed

Fan, Guangwen; Shen, Yu; Hao, Xiaowei; Yuan, Zongming; Zhou, Zhi

2015-09-18

Temperature distribution is a critical indicator of the health condition for Liquefied Petroleum Gas (LPG) storage tanks. In this paper, we present a large-scale wireless temperature monitoring system to evaluate the safety of LPG storage tanks. The system includes wireless sensors networks, high temperature fiber-optic sensors, and monitoring software. Finally, a case study on real-world LPG storage tanks proves the feasibility of the system. The unique features of wireless transmission, automatic data acquisition and management, local and remote access make the developed system a good alternative for temperature monitoring of LPG storage tanks in practical applications.

Minimally-Invasive Neural Interface for Distributed Wireless Electrocorticogram Recording Systems

PubMed Central

Chang, Sun-Il

2018-01-01

This paper presents a minimally-invasive neural interface for distributed wireless electrocorticogram (ECoG) recording systems. The proposed interface equips all necessary components for ECoG recording, such as the high performance front-end integrated circuits, a fabricated flexible microelectrode array, and wireless communication inside a miniaturized custom-made platform. The multiple units of the interface systems can be deployed to cover a broad range of the target brain region and transmit signals via a built-in intra-skin communication (ISCOM) module. The core integrated circuit (IC) consists of 16-channel, low-power push-pull double-gated preamplifiers, in-channel successive approximation register analog-to-digital converters (SAR ADC) with a single-clocked bootstrapping switch and a time-delayed control unit, an ISCOM module for wireless data transfer through the skin instead of a power-hungry RF wireless transmitter, and a monolithic voltage/current reference generator to support the aforementioned analog and mixed-signal circuit blocks. The IC was fabricated using 250 nm CMOS processes in an area of 3.2 × 0.9 mm2 and achieved the low-power operation of 2.5 µW per channel. Input-referred noise was measured as 5.62 µVrms for 10 Hz to 10 kHz and ENOB of 7.21 at 31.25 kS/s. The implemented system successfully recorded multi-channel neural activities in vivo from a primate and demonstrated modular expandability using the ISCOM with power consumption of 160 µW. PMID:29342103

Minimally-Invasive Neural Interface for Distributed Wireless Electrocorticogram Recording Systems.

PubMed

Chang, Sun-Il; Park, Sung-Yun; Yoon, Euisik

2018-01-17

This paper presents a minimally-invasive neural interface for distributed wireless electrocorticogram (ECoG) recording systems. The proposed interface equips all necessary components for ECoG recording, such as the high performance front-end integrated circuits, a fabricated flexible microelectrode array, and wireless communication inside a miniaturized custom-made platform. The multiple units of the interface systems can be deployed to cover a broad range of the target brain region and transmit signals via a built-in intra-skin communication (ISCOM) module. The core integrated circuit (IC) consists of 16-channel, low-power push-pull double-gated preamplifiers, in-channel successive approximation register analog-to-digital converters (SAR ADC) with a single-clocked bootstrapping switch and a time-delayed control unit, an ISCOM module for wireless data transfer through the skin instead of a power-hungry RF wireless transmitter, and a monolithic voltage/current reference generator to support the aforementioned analog and mixed-signal circuit blocks. The IC was fabricated using 250 nm CMOS processes in an area of 3.2 × 0.9 mm² and achieved the low-power operation of 2.5 µW per channel. Input-referred noise was measured as 5.62 µV rms for 10 Hz to 10 kHz and ENOB of 7.21 at 31.25 kS/s. The implemented system successfully recorded multi-channel neural activities in vivo from a primate and demonstrated modular expandability using the ISCOM with power consumption of 160 µW.

65 nm LP/GP mix low cost platform for multi-media wireless and consumer applications

NASA Astrophysics Data System (ADS)

Tavel, B.; Duriez, B.; Gwoziecki, R.; Basso, M. T.; Julien, C.; Ortolland, C.; Laplanche, Y.; Fox, R.; Sabouret, E.; Detcheverry, C.; Boeuf, F.; Morin, P.; Barge, D.; Bidaud, M.; Biénacel, J.; Garnier, P.; Cooper, K.; Chapon, J. D.; Trouiller, Y.; Belledent, J.; Broekaart, M.; Gouraud, P.; Denais, M.; Huard, V.; Rochereau, K.; Difrenza, R.; Planes, N.; Marin, M.; Boret, S.; Gloria, D.; Vanbergue, S.; Abramowitz, P.; Vishnubhotla, L.; Reber, D.; Stolk, P.; Woo, M.; Arnaud, F.

2006-04-01

A complete 65 nm CMOS platform, called LP/GP Mix, has been developed employing thick oxide transistor (IO), Low Power (LP) and General Purpose (GP) devices on the same chip. Dedicated to wireless multi-media and consumer applications, this new triple gate oxide platform is low cost (+1mask only) and saves over 35% of dynamic power with the use of the low operating voltage GP. The LP/GP mix shows competitive digital performance with a ring oscillator (FO = 1) speed equal to 7 ps per stage (GP) and 6T-SRAM static power lower than 10 pA/cell (LP). Compatible with mixed-signal design requirements, transistors show high voltage gain, low mismatch factor and low flicker noise. Moreover, to address mobile phone demands, excellent RF performance has been achieved with FT = 160 GHz for LP and 280 GHz for GP nMOS transistors.

CMOS chip planarization by chemical mechanical polishing for a vertically stacked metal MEMS integration

NASA Astrophysics Data System (ADS)

Lee, Hocheol; Miller, Michele H.; Bifano, Thomas G.

2004-01-01

In this paper we present the planarization process of a CMOS chip for the integration of a microelectromechanical systems (MEMS) metal mirror array. The CMOS chip, which comes from a commercial foundry, has a bumpy passivation layer due to an underlying aluminum interconnect pattern (1.8 µm high), which is used for addressing individual micromirror array elements. To overcome the tendency for tilt error in the CMOS chip planarization, the approach is to sputter a thick layer of silicon nitride at low temperature and to surround the CMOS chip with dummy silicon pieces that define a polishing plane. The dummy pieces are first lapped down to the height of the CMOS chip, and then all pieces are polished. This process produced a chip surface with a root-mean-square flatness error of less than 100 nm, including tilt and curvature errors.

CMOS-compatible plenoptic detector for LED lighting applications.

PubMed

Neumann, Alexander; Ghasemi, Javad; Nezhadbadeh, Shima; Nie, Xiangyu; Zarkesh-Ha, Payman; Brueck, S R J

2015-09-07

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

A Fully Implantable, NFC Enabled, Continuous Interstitial Glucose Monitor

PubMed Central

Anabtawi, Nijad; Freeman, Sabrina; Ferzli, Rony

2017-01-01

This work presents an integrated system-on-chip (SoC) that forms the core of a long-term, fully implantable, battery assisted, passive continuous glucose monitor. It integrates an amperometric glucose sensor interface, a near field communication (NFC) wireless front-end and a fully digital switched mode power management unit for supply regulation and on board battery charging. It uses 13.56 MHz (ISM) band to harvest energy and backscatter data to an NFC reader. System was implemented in 14nm CMOS technology and validated with post layout simulations. PMID:28702512

A Fully Implantable, NFC Enabled, Continuous Interstitial Glucose Monitor.

PubMed

Anabtawi, Nijad; Freeman, Sabrina; Ferzli, Rony

2016-02-01

This work presents an integrated system-on-chip (SoC) that forms the core of a long-term, fully implantable, battery assisted, passive continuous glucose monitor. It integrates an amperometric glucose sensor interface, a near field communication (NFC) wireless front-end and a fully digital switched mode power management unit for supply regulation and on board battery charging. It uses 13.56 MHz (ISM) band to harvest energy and backscatter data to an NFC reader. System was implemented in 14nm CMOS technology and validated with post layout simulations.

A multi-channel instrumentation system for biosignal recording.

PubMed

Yu, Hong; Li, Pengfei; Xiao, Zhiming; Peng, Chung-Ching; Bashirullah, Rizwan

2008-01-01

This paper reports a highly integrated battery operated multi-channel instrumentation system intended for physiological signal recording. The mixed signal IC has been fabricated in standard 0.5microm 5V 3M-2P CMOS process and features 32 instrumentation amplifiers, four 8b SAR ADCs, a wireless power interface with Li-ion battery charger, low power bidirectional telemetry and FSM controller with power gating control for improved energy efficiency. The chip measures 3.2mm by 4.8mm and dissipates approximately 2.1mW when fully operational.

Large-Scale Wireless Temperature Monitoring System for Liquefied Petroleum Gas Storage Tanks

PubMed Central

Fan, Guangwen; Shen, Yu; Hao, Xiaowei; Yuan, Zongming; Zhou, Zhi

2015-01-01

Temperature distribution is a critical indicator of the health condition for Liquefied Petroleum Gas (LPG) storage tanks. In this paper, we present a large-scale wireless temperature monitoring system to evaluate the safety of LPG storage tanks. The system includes wireless sensors networks, high temperature fiber-optic sensors, and monitoring software. Finally, a case study on real-world LPG storage tanks proves the feasibility of the system. The unique features of wireless transmission, automatic data acquisition and management, local and remote access make the developed system a good alternative for temperature monitoring of LPG storage tanks in practical applications. PMID:26393596

Low-Cost Wireless Temperature Measurement: Design, Manufacture, and Testing of a PCB-Based Wireless Passive Temperature Sensor.

PubMed

Yan, Dan; Yang, Yong; Hong, Yingping; Liang, Ting; Yao, Zong; Chen, Xiaoyong; Xiong, Jijun

2018-02-10

Low-cost wireless temperature measurement has significant value in the food industry, logistics, agriculture, portable medical equipment, intelligent wireless health monitoring, and many areas in everyday life. A wireless passive temperature sensor based on PCB (Printed Circuit Board) materials is reported in this paper. The advantages of the sensor include simple mechanical structure, convenient processing, low-cost, and easiness in integration. The temperature-sensitive structure of the sensor is a dielectric-loaded resonant cavity, consisting of the PCB substrate. The sensitive structure also integrates a patch antenna for the transmission of temperature signals. The temperature sensing mechanism of the sensor is the dielectric constant of the PCB substrate changes with temperature, which causes the resonant frequency variation of the resonator. Then the temperature can be measured by detecting the changes in the sensor's working frequency. The PCB-based wireless passive temperature sensor prototype is prepared through theoretical design, parameter analysis, software simulation, and experimental testing. The high- and low-temperature sensing performance of the sensor is tested, respectively. The resonant frequency decreases from 2.434 GHz to 2.379 GHz as the temperature increases from -40 °C to 125 °C. The fitting curve proves that the experimental data have good linearity. Three repetitive tests proved that the sensor possess well repeatability. The average sensitivity is 347.45 KHz / ℃ from repetitive measurements conducted three times. This study demonstrates the feasibility of the PCB-based wireless passive sensor, which provides a low-cost temperature sensing solution for everyday life, modern agriculture, thriving intelligent health devices, and so on, and also enriches PCB product lines and applications.

Low-Cost Wireless Temperature Measurement: Design, Manufacture, and Testing of a PCB-Based Wireless Passive Temperature Sensor

PubMed Central

Yan, Dan; Yang, Yong; Hong, Yingping; Liang, Ting; Yao, Zong; Chen, Xiaoyong; Xiong, Jijun

2018-01-01

Low-cost wireless temperature measurement has significant value in the food industry, logistics, agriculture, portable medical equipment, intelligent wireless health monitoring, and many areas in everyday life. A wireless passive temperature sensor based on PCB (Printed Circuit Board) materials is reported in this paper. The advantages of the sensor include simple mechanical structure, convenient processing, low-cost, and easiness in integration. The temperature-sensitive structure of the sensor is a dielectric-loaded resonant cavity, consisting of the PCB substrate. The sensitive structure also integrates a patch antenna for the transmission of temperature signals. The temperature sensing mechanism of the sensor is the dielectric constant of the PCB substrate changes with temperature, which causes the resonant frequency variation of the resonator. Then the temperature can be measured by detecting the changes in the sensor’s working frequency. The PCB-based wireless passive temperature sensor prototype is prepared through theoretical design, parameter analysis, software simulation, and experimental testing. The high- and low-temperature sensing performance of the sensor is tested, respectively. The resonant frequency decreases from 2.434 GHz to 2.379 GHz as the temperature increases from −40 °C to 125 °C. The fitting curve proves that the experimental data have good linearity. Three repetitive tests proved that the sensor possess well repeatability. The average sensitivity is 347.45 KHz/°C℃ from repetitive measurements conducted three times. This study demonstrates the feasibility of the PCB-based wireless passive sensor, which provides a low-cost temperature sensing solution for everyday life, modern agriculture, thriving intelligent health devices, and so on, and also enriches PCB product lines and applications. PMID:29439393

A CMOS One-chip Wireless Camera with Digital Image Transmission Function for Capsule Endoscopes

NASA Astrophysics Data System (ADS)

Itoh, Shinya; Kawahito, Shoji; Terakawa, Susumu

This paper presents the design and implementation of a one-chip camera device for capsule endoscopes. This experimental chip integrates functional circuits required for capsule endoscopes and digital image transmission function. The integrated functional blocks include an image array, a timing generator, a clock generator, a voltage regulator, a 10b cyclic A/D converter, and a BPSK modulator. It can be operated autonomously with 3 pins (VDD, GND, and DATAOUT). A prototype image sensor chip which has 320x240 effective pixels was fabricated using 0.25μm CMOS image sensor process and the autonomous imaging was demonstrated. The chip size is 4.84mmx4.34mm. With a 2.0 V power supply, the analog part consumes 950μW and the total power consumption at 2 frames per second (fps) is 2.6mW. Error-free image transmission over a distance of 48cm at 2.5Mbps corresponding to 2fps has been succeeded with inductive coupling.

Novel wireless health monitor with acupuncture bio-potentials obtained by using a replaceable salt-water-wetted foam-rubber cushions on RFID-tag.

PubMed

Lin, Jium-Ming; Lu, Hung-Han; Lin, Cheng-Hung

2014-01-01

This paper proposes a bio-potential measurement apparatus including a wireless device for transmitting acupuncture bio-potential information to a remote control station for health conditions analysis and monitor. The key technology of this system is to make replaceable foam-rubber cushions, double-side conducting tapes, chip and antenna on the radio frequency identification (RFID) tag. The foam-rubber cushions can be wetted with salt-water and contact with the acupuncture points to reduce contact resistance. Besides, the double-side conducting tapes are applied to fix foam-rubber cushions. Thus, one can peel the used cushions or tapes away and supply new ones quickly. Since the tag is a flexible plastic substrate, it is easy to deploy on the skin. Besides, the amplifier made by CMOS technology on RFID chip could amplify the signals to improve S/N ratio and impedance matching. Thus, cloud server can wirelessly monitor the health conditions. An example shows that the proposed system can be used as a wireless health condition monitor, the numerical method and the criteria are given to analyze eleven bio-potentials for the important acupunctures of eleven meridians on a person's hands and legs. Then a professional doctor can know the performance of an individual and the cross-linking effects of the organs.

A 0.7-V 17.4- μ W 3-lead wireless ECG SoC.

PubMed

Khayatzadeh, Mahmood; Zhang, Xiaoyang; Tan, Jun; Liew, Wen-Sin; Lian, Yong

2013-10-01

This paper presents a fully integrated sub-1 V 3-lead wireless ECG System-on-Chip (SoC) for wireless body sensor network applications. The SoC includes a two-channel ECG front-end with a driven-right-leg circuit, an 8-bit SAR ADC, a custom-designed 16-bit microcontroller, two banks of 16 kb SRAM, and a MICS band transceiver. The microcontroller and SRAM blocks are able to operate at sub-/near-threshold regime for the best energy consumption. The proposed SoC has been implemented in a standard 0.13- μ m CMOS process. Measurement results show the microcontroller consumes only 2.62 pJ per instruction at 0.35 V . Both microcontroller and memory blocks are functional down to 0.25 V. The entire SoC is capable of working at single 0.7-V supply. At the best case, it consumes 17.4 μ W in heart rate detection mode and 74.8 μW in raw data acquisition mode under sampling rate of 500 Hz. This makes it one of the best ECG SoCs among state-of-the-art biomedical chips.

Integrated digital printing of flexible circuits for wireless sensing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mei, Ping; Whiting, Gregory L.; Schwartz, David E.; Ng, Tse Nga; Krusor, Brent S.; Ready, Steve E.; Daniel, George; Veres, Janos; Street, Bob

2016-09-01

Wireless sensing has broad applications in a wide variety of fields such as infrastructure monitoring, chemistry, environmental engineering and cold supply chain management. Further development of sensing systems will focus on achieving light weight, flexibility, low power consumption and low cost. Fully printed electronics provide excellent flexibility and customizability, as well as the potential for low cost and large area applications, but lack solutions for high-density, high-performance circuitry. Conventional electronics mounted on flexible printed circuit boards provide high performance but are not digitally fabricated or readily customizable. Incorporation of small silicon dies or packaged chips into a printed platform enables high performance without compromising flexibility or cost. At PARC, we combine high functionality c-Si CMOS and digitally printed components and interconnects to create an integrated platform that can read and process multiple discrete sensors. Our approach facilitates customization to a wide variety of sensors and user interfaces suitable for a broad range of applications including remote monitoring of health, structures and environment. This talk will describe several examples of printed wireless sensing systems. The technologies required for these sensor systems are a mix of novel sensors, printing processes, conventional microchips, flexible substrates and energy harvesting power solutions.

A Sub-millimeter, Inductively Powered Neural Stimulator

PubMed Central

Freeman, Daniel K.; O'Brien, Jonathan M.; Kumar, Parshant; Daniels, Brian; Irion, Reed A.; Shraytah, Louis; Ingersoll, Brett K.; Magyar, Andrew P.; Czarnecki, Andrew; Wheeler, Jesse; Coppeta, Jonathan R.; Abban, Michael P.; Gatzke, Ronald; Fried, Shelley I.; Lee, Seung Woo; Duwel, Amy E.; Bernstein, Jonathan J.; Widge, Alik S.; Hernandez-Reynoso, Ana; Kanneganti, Aswini; Romero-Ortega, Mario I.; Cogan, Stuart F.

2017-01-01

Wireless neural stimulators are being developed to address problems associated with traditional lead-based implants. However, designing wireless stimulators on the sub-millimeter scale (<1 mm3) is challenging. As device size shrinks, it becomes difficult to deliver sufficient wireless power to operate the device. Here, we present a sub-millimeter, inductively powered neural stimulator consisting only of a coil to receive power, a capacitor to tune the resonant frequency of the receiver, and a diode to rectify the radio-frequency signal to produce neural excitation. By replacing any complex receiver circuitry with a simple rectifier, we have reduced the required voltage levels that are needed to operate the device from 0.5 to 1 V (e.g., for CMOS) to ~0.25–0.5 V. This reduced voltage allows the use of smaller receive antennas for power, resulting in a device volume of 0.3–0.5 mm3. The device was encapsulated in epoxy, and successfully passed accelerated lifetime tests in 80°C saline for 2 weeks. We demonstrate a basic proof-of-concept using stimulation with tens of microamps of current delivered to the sciatic nerve in rat to produce a motor response. PMID:29230164

Calibration and tests of commercial wireless infrared thermometers

USDA-ARS?s Scientific Manuscript database

Applications of infrared thermometers (IRTs) in large agricultural fields require wireless data transmission, and IRT target temperature should have minimal sensitivity to internal detector temperature. To meet these objectives, a prototype wireless IRT system was developed at USDA Agricultural Rese...

An Implantable RFID Sensor Tag toward Continuous Glucose Monitoring.

PubMed

Xiao, Zhibin; Tan, Xi; Chen, Xianliang; Chen, Sizheng; Zhang, Zijian; Zhang, Hualei; Wang, Junyu; Huang, Yue; Zhang, Peng; Zheng, Lirong; Min, Hao

2015-05-01

This paper presents a wirelessly powered implantable electrochemical sensor tag for continuous blood glucose monitoring. The system is remotely powered by a 13.56-MHz inductive link and utilizes an ISO 15693 radio frequency identification (RFID) standard for communication. This paper provides reliable and accurate measurement for changing glucose level. The sensor tag employs a long-term glucose sensor, a winding ferrite antenna, an RFID front-end, a potentiostat, a 10-bit sigma-delta analog to digital converter, an on-chip temperature sensor, and a digital baseband for protocol processing and control. A high-frequency external reader is used to power, command, and configure the sensor tag. The only off-chip support circuitry required is a tuned antenna and a glucose microsensor. The integrated chip fabricated in SMIC 0.13-μm CMOS process occupies an area of 1.2 mm ×2 mm and consumes 50 μW. The power sensitivity of the whole system is -4 dBm. The sensor tag achieves a measured glucose range of 0-30 mM with a sensitivity of 0.75 nA/mM.

30 pJ/b, 67 Mbps, Centimeter-to-Meter Range Data Telemetry With an IR-UWB Wireless Link.

PubMed

Ebrazeh, Ali; Mohseni, Pedram

2015-06-01

This paper reports an energy-efficient, impulse radio ultra wideband (IR-UWB) wireless link operating in 3-5 GHz for data telemetry over centimeter-to-meter range distances at rates extended to tens of Mbps. The link comprises an all-digital, integrated transmitter (TX) fabricated in 90 nm 1P/9M CMOS that incorporates a waveform-synthesis pulse generator and a timing generator for on-off-keying (OOK) pulse modulation and phase scrambling. The link also incorporates an energy-detection receiver (RX) realized with commercial off-the-shelf (COTS) components that performs radio-frequency (RF) filtering, amplification, logarithmic power detection for data demodulation and automatic level control for robust operation in the presence of distance variations. Employing a miniaturized, UWB, chip antenna for the TX and RX, wireless transmission of pseudo-random binary sequence (PRBS) data at rates up to 50 Mbps over 10 cm-1 m is shown. Further, employing a high-gain horn antenna for the RX, wireless transmission of PRBS data at rates up to 67 Mbps over 50 cm-4 m is shown with a TX energy consumption of 30 pJ/b (i.e., power consumption of 2 mW) from 1.2 V. The measured bit error rate (BER) in both cases is < 10(-7) . Results from wireless recording of the background current of a carbon-fiber microelectrode (CFM) in one fast-scan cyclic voltammetry (FSCV) scan using the IR-UWB link are also included, exhibiting excellent match with those obtained from a conventional frequency-shift-keyed (FSK) link at ~433 MHz.

A wirelessly powered electro-acupuncture based on adaptive pulsewidth monophase stimulation.

PubMed

Kiseok Song; Long Yan; Seulki Lee; Yoo, Jerald; Hoi-Jun Yoo

2011-04-01

A wirelessly powered electro-acupuncture (EA) system with adaptive-pulsewidth (APW) monophase stimulation is presented for convenient invasive medicine. The proposed system removes cumbersome wires connected between EA nodes and an EA controller in order to realize both patients' convenience and remedial values simultaneously. An ultra-low-power stimulator integrated circuit (IC) that is integrated on the flexible-printed-circuit board (F-PCB) is attached to the tip of a needle electrode. Combined with a conductive yarn helical antenna wound around the needle electrode, the EA node receives wireless power from the EA controller using 433 MHz with the maximum loss of 6 dB. A zero-Vth nMOS rectifier harvests a supply voltage of 1.0 V from a -16-dBm incoming power signal with 32% efficiency. To deal with a body impedance variation (BIV) in the range of 100-200 kΩ , the proposed APW stimulator IC, fabricated in a 0.18-μm 1P6M complementary metal-oxide semiconductor CMOS process and occupying 1.56 mm(2), enables constant charge injection of 80-nC/stimulation. To ensure the patients' safety, the EA node (a pair of EAs) shares ground and clock wires to operate in alternate monophase (AMP) fashion for neutralizing the injected charge. The proposed wirelessly powered EA node was verified by applying it to a chunk of pork as a body model with the wireless power supplied from an RF signal generator (output power of 10 dBm and located 30 cm away).

A CMOS smart temperature and humidity sensor with combined readout.

PubMed

Eder, Clemens; Valente, Virgilio; Donaldson, Nick; Demosthenous, Andreas

2014-09-16

A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm2 or 1.2 mm2 were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 µA.

A Wind Energy Powered Wireless Temperature Sensor Node

PubMed Central

Zhang, Chuang; He, Xue-Feng; Li, Si-Yu; Cheng, Yao-Qing; Rao, Yang

2015-01-01

A wireless temperature sensor node composed of a piezoelectric wind energy harvester, a temperature sensor, a microcontroller, a power management circuit and a wireless transmitting module was developed. The wind-induced vibration energy harvester with a cuboid chamber of 62 mm × 19.6 mm × 10 mm converts ambient wind energy into electrical energy to power the sensor node. A TMP102 temperature sensor and the MSP430 microcontroller are used to measure the temperature. The power management module consists of LTC3588-1 and LT3009 units. The measured temperature is transmitted by the nRF24l01 transceiver. Experimental results show that the critical wind speed of the harvester was about 5.4 m/s and the output power of the harvester was about 1.59 mW for the electrical load of 20 kΩ at wind speed of 11.2 m/s, which was sufficient to power the wireless sensor node to measure and transmit the temperature every 13 s. When the wind speed increased from 6 m/s to 11.5 m/s, the self-powered wireless sensor node worked normally. PMID:25734649

A wind energy powered wireless temperature sensor node.

PubMed

Zhang, Chuang; He, Xue-Feng; Li, Si-Yu; Cheng, Yao-Qing; Rao, Yang

2015-02-27

A wireless temperature sensor node composed of a piezoelectric wind energy harvester, a temperature sensor, a microcontroller, a power management circuit and a wireless transmitting module was developed. The wind-induced vibration energy harvester with a cuboid chamber of 62 mm × 19.6 mm × 10 mm converts ambient wind energy into electrical energy to power the sensor node. A TMP102 temperature sensor and the MSP430 microcontroller are used to measure the temperature. The power management module consists of LTC3588-1 and LT3009 units. The measured temperature is transmitted by the nRF24l01 transceiver. Experimental results show that the critical wind speed of the harvester was about 5.4 m/s and the output power of the harvester was about 1.59 mW for the electrical load of 20 kΩ at wind speed of 11.2 m/s, which was sufficient to power the wireless sensor node to measure and transmit the temperature every 13 s. When the wind speed increased from 6 m/s to 11.5 m/s, the self-powered wireless sensor node worked normally.

Performance of CMOS imager as sensing element for a Real-time Active Pixel Dosimeter for Interventional Radiology procedures

NASA Astrophysics Data System (ADS)

Magalotti, D.; Bissi, L.; Conti, E.; Paolucci, M.; Placidi, P.; Scorzoni, A.; Servoli, L.

2014-01-01

Staff members applying Interventional Radiology procedures are exposed to ionizing radiation, which can induce detrimental effects to the human body, and requires an improvement of radiation protection. This paper is focused on the study of the sensor element for a wireless real-time dosimeter to be worn by the medical staff during the interventional radiology procedures, in the framework of the Real-Time Active PIxel Dosimetry (RAPID) INFN project. We characterize a CMOS imager to be used as detection element for the photons scattered by the patient body. The CMOS imager has been first characterized in laboratory using fluorescence X-ray sources, then a PMMA phantom has been used to diffuse the X-ray photons from an angiography system. Different operating conditions have been used to test the detector response in realistic situations, by varying the X-ray tube parameters (continuous/pulsed mode, tube voltage and current, pulse parameters), the sensor parameters (gain, integration time) and the relative distance between sensor and phantom. The sensor response has been compared with measurements performed using passive dosimeters (TLD) and also with a certified beam, in an accredited calibration centre, in order to obtain an absolute calibration. The results are very encouraging, with dose and dose rate measurement uncertainties below the 10% level even for the most demanding Interventional Radiology protocols.

Design of a Programmable Gain, Temperature Compensated Current-Input Current-Output CMOS Logarithmic Amplifier.

PubMed

Ming Gu; Chakrabartty, Shantanu

2014-06-01

This paper presents the design of a programmable gain, temperature compensated, current-mode CMOS logarithmic amplifier that can be used for biomedical signal processing. Unlike conventional logarithmic amplifiers that use a transimpedance technique to generate a voltage signal as a logarithmic function of the input current, the proposed approach directly produces a current output as a logarithmic function of the input current. Also, unlike a conventional transimpedance amplifier the gain of the proposed logarithmic amplifier can be programmed using floating-gate trimming circuits. The synthesis of the proposed circuit is based on the Hart's extended translinear principle which involves embedding a floating-voltage source and a linear resistive element within a translinear loop. Temperature compensation is then achieved using a translinear-based resistive cancelation technique. Measured results from prototypes fabricated in a 0.5 μm CMOS process show that the amplifier has an input dynamic range of 120 dB and a temperature sensitivity of 230 ppm/°C (27 °C- 57°C), while consuming less than 100 nW of power.

A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

NASA Astrophysics Data System (ADS)

Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

2016-05-01

A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate-source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base-emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from -40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is -31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

DNA decorated carbon nanotube sensors on CMOS circuitry for environmental monitoring

NASA Astrophysics Data System (ADS)

Liu, Yu; Chen, Chia-Ling; Agarwal, V.; Li, Xinghui; Sonkusale, S.; Dokmeci, Mehmet R.; Wang, Ming L.

2010-04-01

Single-walled carbon nanotubes (SWNTs) with their large surface area, high aspect ratio are one of the novel materials which have numerous attractive features amenable for high sensitivity sensors. Several nanotube based sensors including, gas, chemical and biosensors have been demonstrated. Moreover, most of these sensors require off chip components to detect the variations in the signals making them complicated and hard to commercialize. Here we present a novel complementary metal oxide semiconductor (CMOS) integrated carbon nanotube sensors for portable high sensitivity chemical sensing applications. Multiple zincation steps have been developed to ascertain proper electrical connectivity between the carbon nanotubes and the foundry made CMOS circuitry. The SWNTs have been integrated onto (CMOS) circuitry as the feedback resistor of a Miller compensated operational amplifier utilizing low temperature Dielectrophoretic (DEP) assembly process which has been tailored to be compatible with the post-CMOS integration at the die level. Building nanotube sensors directly on commercial CMOS circuitry allows single chip solutions eliminating the need for long parasitic lines and numerous wire bonds. The carbon nanotube sensors realized on CMOS circuitry show strong response to various vapors including Dimethyl methylphosphonate and Dinitrotoluene. The remarkable set of attributes of the SWNTs realized on CMOS electronic chips provides an attractive platform for high sensitivity portable nanotube based bio and chemical sensors.

The heterogeneous integration of single-walled carbon nanotubes onto complementary metal oxide semiconductor circuitry for sensing applications.

PubMed

Chen, Chia-Ling; Agarwal, Vinay; Sonkusale, Sameer; Dokmeci, Mehmet R

2009-06-03

A simple methodology for integrating single-walled carbon nanotubes (SWNTs) onto complementary metal oxide semiconductor (CMOS) circuitry is presented. The SWNTs were incorporated onto the CMOS chip as the feedback resistor of a two-stage Miller compensated operational amplifier utilizing dielectrophoretic assembly. The measured electrical properties from the integrated SWNTs yield ohmic behavior with a two-terminal resistance of approximately 37.5 kOmega and the measured small signal ac gain (-2) from the inverting amplifier confirmed successful integration of carbon nanotubes onto the CMOS circuitry. Furthermore, the temperature response of the SWNTs integrated onto CMOS circuitry has been measured and had a thermal coefficient of resistance (TCR) of -0.4% degrees C(-1). This methodology, demonstrated for the integration of SWNTs onto CMOS technology, is versatile, high yield and paves the way for the realization of novel miniature carbon-nanotube-based sensor systems.

A 2.87 ppm/°C 65 nm CMOS bandgap reference with nonlinearity compensation

NASA Astrophysics Data System (ADS)

Xingyuan, Tong; Zhangming, Zhu; Yintang, Yang

2011-09-01

Based on the review and analysis of two recently reported low temperature coefficient (TC) bandgap voltage references (BGRs), a new temperature compensation technique is presented. With the double-end piecewise nonlinearity correction method, the logarithm cancellation technique and the mixed-mode output topology, a BGR with high-temperature stability is realised based on 65 nm CMOS low-leakage process. The post-simulation results using Spectre show that this BGR produces an output voltage of about 953 mV with 2.5 V supply voltage, and the output voltage varies by only 0.16 mV from -40°C to 125°C. This low TC BGR has been used in a 65 nm CMOS touch screen controller, and the measurement shows that the output voltage of this BGR is about 949 mV varying by 0.44 mV from -40°C to 125°C. The TC of this BGR is about 2.87 ppm/°C, meeting the requirement of high-precision SoC application.

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

PubMed

Yuryev, Vladimir A; Arapkina, Larisa V

2011-09-05

Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

NASA Technical Reports Server (NTRS)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Effect of deep cryogenic temperature on silicon-on-insulator CMOS mismatch: A circuit designer’s perspective

NASA Astrophysics Data System (ADS)

Das, Kushal; Lehmann, Torsten

2014-07-01

The effect of ultra low operating temperature on mismatch among identically designed Silicon-on-Sapphire CMOS devices is investigated in detail from a circuit design view point. The evolution of transistor matching properties for different operating conditions at both room and 4.2 K temperature are presented. The statistical analysis reveals that mismatch at low temperature is effectively unrelated to that at room temperature, which disagrees with previously published literature. The measurement data was used to extract key transistor parameters and the consequence of temperature lowering on their respective variance is estimated. We find that standard deviation of the threshold-voltage mismatch deteriorates by a factor ∼2 at 4.2 K temperature. Similar to room temperature operation, mismatch at 4.2 K is bias point dependent and the degradation of matching at very low temperature depends to some extent on how the bias point shifts upon cooling.

Issues of nanoelectronics: a possible roadmap.

PubMed

Wang, Kang L

2002-01-01

In this review, we will discuss a possible roadmap in scaling a nanoelectronic device from today's CMOS technology to the ultimate limit when the device fails. In other words, at the limit, CMOS will have a severe short channel effect, significant power dissipation in its quiescent (standby) state, and problems related to other essential characteristics. Efforts to use structures such as the double gate, vertical surround gate, and SOI to improve the gate control have continually been made. Other types of structures using SiGe source/drain, asymmetric Schottky source/drain, and the like will be investigated as viable structures to achieve ultimate CMOS. In reaching its scaling limit, tunneling will be an issue for CMOS. The tunneling current through the gate oxide and between the source and drain will limit the device operation. When tunneling becomes significant, circuits may incorporate tunneling devices with CMOS to further increase the functionality per device count. We will discuss both the top-down and bottom-up approaches in attaining the nanometer scale and eventually the atomic scale. Self-assembly is used as a bottom-up approach. The state of the art is reviewed, and the challenges of the multiple-step processing in using the self-assembly approach are outlined. Another facet of the scaling trend is to decrease the number of electrons in devices, ultimately leading to single electrons. If the size of a single-electron device is scaled in such a way that the Coulomb self-energy is higher than the thermal energy (at room temperature), a single-electron device will be able to operate at room temperature. In principle, the speed of the device will be fast as long as the capacitance of the load is also scaled accordingly. The single-electron device will have a small drive current, and thus the load capacitance, including those of interconnects and fanouts, must be small to achieve a reasonable speed. However, because the increase in the density (and/or functionality) of integrated circuits is the principal driver, the wiring or interconnects will increase and become the bottleneck for the design of future high-density and high-functionality circuits, particularly for single-electron devices. Furthermore, the massive interconnects needed in the architecture used today will result in an increase in load capacitance. Thus for single-electron device circuits, it is critical to have minimal interconnect loads. And new types of architectures with minimal numbers of global interconnects will be needed. Cellular automata, which need only nearest-neighbor interconnects, are discussed as a plausible example. Other architectures such as neural networks are also possible. Examples of signal processing using cellular automata are discussed. Quantum computing and information processing are based on quantum mechanical descriptions of individual particles correlated among each other. A quantum bit or qubit is described as a linear superposition of the wave functions of a two-state system, for example, the spin of a particle. With the interaction of two qubits, they are connected in a "wireless fashion" using wave functions via quantum mechanical interaction, referred to as entanglement. The interconnection by the nonlocality of wave functions affords a massive parallel nature for computing or so-called quantum parallelism. We will describe the potential and solid-state implementations of quantum computing and information, using electron spin and/or nuclear spin in Si and Ge. Group IV elements have a long coherent time and other advantages. The example of using SiGe for g factor engineering will be described.

A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

NASA Astrophysics Data System (ADS)

Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

2016-07-01

We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

Reliability evaluation of CMOS RAMs

NASA Astrophysics Data System (ADS)

Salvo, C. J.; Sasaki, A. T.

The results of an evaluation of the reliability of a 1K x 1 bit CMOS RAM and a 4K x 1 bit CMOS RAM for the USAF are reported. The tests consisted of temperature cycling, thermal shock, electrical overstress-static discharge and accelerated life test cells. The study indicates that the devices have high reliability potential for military applications. Use-temperature failure rates at 100 C were 0.54 x 10 to the -5th failures/hour for the 1K RAM and 0.21 x 10 to the -5th failures/hour for the 4K RAM. Only minimal electrostatic discharge damage was noted in the devices when they were subjected to multiple pulses at 1000 Vdc, and redesign of the 7 Vdc quiescent parameter of the 4K RAM is expected to raise its field threshold voltage.

A 0.13µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation

NASA Astrophysics Data System (ADS)

Agawa, Kenichi; Ishizuka, Shinichiro; Majima, Hideaki; Kobayashi, Hiroyuki; Koizumi, Masayuki; Nagano, Takeshi; Arai, Makoto; Shimizu, Yutaka; Maki, Asuka; Urakawa, Go; Terada, Tadashi; Itoh, Nobuyuki; Hamada, Mototsugu; Fujii, Fumie; Kato, Tadamasa; Yoshitomi, Sadayuki; Otsuka, Nobuaki

A 2.4GHz 0.13µm CMOS transceiver LSI, supporting Bluetooth V2.1 + enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between -40°C and +90°C. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of -90dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13µm CMOS and operation at a low supply voltage of 1.5V result in small area and low power consumption.

Design of a Humidity Sensor Tag for Passive Wireless Applications.

PubMed

Wu, Xiang; Deng, Fangming; Hao, Yong; Fu, Zhihui; Zhang, Lihua

2015-10-07

This paper presents a wireless humidity sensor tag for low-cost and low-power applications. The proposed humidity sensor tag, based on radio frequency identification (RFID) technology, was fabricated in a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process. The top metal layer was deposited to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture, resulting in a flat power conversion efficiency curve. The capacitive sensor interface, based on phase-locked loop (PLL) theory, employs a simple architecture and can work with 0.5 V supply voltage. The measurement results show that humidity sensor tag achieves excellent linearity, hysteresis and stability performance. The total power-dissipation of the sensor tag is 2.5 μW, resulting in a maximum operating distance of 23 m under 4 W of radiation power of the RFID reader.

A Power-Efficient Wireless Capacitor Charging System Through an Inductive Link

PubMed Central

Lee, Hyung-Min; Ghovanloo, Maysam

2014-01-01

A power-efficient wireless capacitor charging system for inductively powered applications has been presented. A bank of capacitors can be directly charged from an ac source by generating a current through a series charge injection capacitor and a capacitor charger circuit. The fixed charging current reduces energy loss in switches, while maximizing the charging efficiency. An adaptive capacitor tuner compensates for the resonant capacitance variations during charging to keep the amplitude of the ac input voltage at its peak. We have fabricated the capacitor charging system prototype in a 0.35-μm 4-metal 2-poly standard CMOS process in 2.1 mm2 of chip area. It can charge four pairs of capacitors sequentially. While receiving 2.7-V peak ac input through a 2-MHz inductive link, the capacitor charging system can charge each pair of 1 μF capacitors up to ±2 V in 420 μs, achieving a high measured charging efficiency of 82%. PMID:24678284

Design of a Humidity Sensor Tag for Passive Wireless Applications

PubMed Central

Wu, Xiang; Deng, Fangming; Hao, Yong; Fu, Zhihui; Zhang, Lihua

2015-01-01

This paper presents a wireless humidity sensor tag for low-cost and low-power applications. The proposed humidity sensor tag, based on radio frequency identification (RFID) technology, was fabricated in a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process. The top metal layer was deposited to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture, resulting in a flat power conversion efficiency curve. The capacitive sensor interface, based on phase-locked loop (PLL) theory, employs a simple architecture and can work with 0.5 V supply voltage. The measurement results show that humidity sensor tag achieves excellent linearity, hysteresis and stability performance. The total power-dissipation of the sensor tag is 2.5 μW, resulting in a maximum operating distance of 23 m under 4 W of radiation power of the RFID reader. PMID:26457707

A Constant Energy-Per-Cycle Ring Oscillator Over a Wide Frequency Range for Wireless Sensor Nodes

PubMed Central

Lee, Inhee; Sylvester, Dennis; Blaauw, David

2016-01-01

This paper presents an energy-efficient oscillator for wireless sensor nodes (WSNs). It avoids short-circuit current by minimizing the time spent in the input voltage range from Vthn to [Vdd − |Vthp|]. A current-feeding scheme with gate voltage control enables the oscillator to operate over a wide frequency range. A test chip is fabricated in a 0.18 μm CMOS process. The measurements show that the proposed oscillator achieves a constant energy-per-cycle (EpC) of 0.8 pJ/cycle over the 21–60 MHz frequency range and is more efficient than a conventional current-starved ring oscillator (CSRO) below 300 kHz at 1.8 V supply voltage. As an application example, the proposed oscillator is implemented in a switched-capacitor DC–DC converter. The converter is 11%–56% more efficient for load power values ranging from 583 pW to 2.9 nW than a converter using a conventional CSRO. PMID:27546899

A Constant Energy-Per-Cycle Ring Oscillator Over a Wide Frequency Range for Wireless Sensor Nodes.

PubMed

Lee, Inhee; Sylvester, Dennis; Blaauw, David

2016-03-01

This paper presents an energy-efficient oscillator for wireless sensor nodes (WSNs). It avoids short-circuit current by minimizing the time spent in the input voltage range from V thn to [ V dd - | V thp |]. A current-feeding scheme with gate voltage control enables the oscillator to operate over a wide frequency range. A test chip is fabricated in a 0.18 μm CMOS process. The measurements show that the proposed oscillator achieves a constant energy-per-cycle (EpC) of 0.8 pJ/cycle over the 21-60 MHz frequency range and is more efficient than a conventional current-starved ring oscillator (CSRO) below 300 kHz at 1.8 V supply voltage. As an application example, the proposed oscillator is implemented in a switched-capacitor DC-DC converter. The converter is 11%-56% more efficient for load power values ranging from 583 pW to 2.9 nW than a converter using a conventional CSRO.

A Power-Efficient Wireless Capacitor Charging System Through an Inductive Link.

PubMed

Lee, Hyung-Min; Ghovanloo, Maysam

2013-10-01

A power-efficient wireless capacitor charging system for inductively powered applications has been presented. A bank of capacitors can be directly charged from an ac source by generating a current through a series charge injection capacitor and a capacitor charger circuit. The fixed charging current reduces energy loss in switches, while maximizing the charging efficiency. An adaptive capacitor tuner compensates for the resonant capacitance variations during charging to keep the amplitude of the ac input voltage at its peak. We have fabricated the capacitor charging system prototype in a 0.35- μ m 4-metal 2-poly standard CMOS process in 2.1 mm 2 of chip area. It can charge four pairs of capacitors sequentially. While receiving 2.7-V peak ac input through a 2-MHz inductive link, the capacitor charging system can charge each pair of 1 μ F capacitors up to ±2 V in 420 μ s, achieving a high measured charging efficiency of 82%.

An Inductively-Powered Wireless Neural Recording System with a Charge Sampling Analog Front-End

PubMed Central

Lee, Seung Bae; Lee, Byunghun; Kiani, Mehdi; Mahmoudi, Babak; Gross, Robert; Ghovanloo, Maysam

2015-01-01

An inductively-powered wireless integrated neural recording system (WINeR-7) is presented for wireless and battery less neural recording from freely-behaving animal subjects inside a wirelessly-powered standard homecage. The WINeR-7 system employs a novel wide-swing dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which performs amplification, filtering, sampling, and analog-to-time conversion (ATC) with minimal interference and small amount of power. The output of the DSCS-AFE produces a pseudo-digital pulse width modulated (PWM) signal. A circular shift register (CSR) time division multiplexes (TDM) the PWM pulses to create a TDM-PWM signal, which is fed into an on-chip 915 MHz transmitter (Tx). The AFE and Tx are supplied at 1.8 V and 4.2 V, respectively, by a power management block, which includes a high efficiency active rectifier and automatic resonance tuning (ART), operating at 13.56 MHz. The 8-ch system-on-a-chip (SoC) was fabricated in a 0.35-μm CMOS process, occupying 5.0 × 2.5 mm2 and consumed 51.4 mW. For each channel, the sampling rate is 21.48 kHz and the power consumption is 19.3 μW. In vivo experiments were conducted on freely behaving rats in an energized homecage by continuously delivering 51.4 mW to the WINeR-7 system in a closed-loop fashion and recording local field potentials (LFP). PMID:27069422

A Smart Wirelessly Powered Homecage for Long-Term High-Throughput Behavioral Experiments

PubMed Central

Lee, Byunghun; Kiani, Mehdi

2015-01-01

A wirelessly powered homecage system, called the EnerCage-HC, that is equipped with multicoil wireless power transfer, closed-loop power control, optical behavioral tracking, and a graphic user interface is presented for longitudinal electrophysiology and behavioral neuroscience experiments. The EnerCage-HC system can wirelessly power a mobile unit attached to a small animal subject and also track its behavior in real-time as it is housed inside a standard homecage. The EnerCage-HC system is equipped with one central and four overlapping slanted wire-wound coils with optimal geometries to form three- and four-coil power transmission links while operating at 13.56 MHz. Utilizing multicoil links increases the power transfer efficiency (PTE) compared with conventional two-coil links and also reduces the number of power amplifiers to only one, which significantly reduces the system complexity, cost, and heat dissipation. A Microsoft Kinect installed 90 cm above the homecage localizes the animal position and orientation with 1.6-cm accuracy. Moreover, a power management ASIC, including a high efficiency active rectifier and automatic coil resonance tuning, was fabricated in a 0.35-μm 4M2P standard CMOS process for the mobile unit. The EnerCage-HC achieves a max/min PTE of 36.3%/16.1% at the nominal height of 7 cm. In vivo experiments were conducted on freely behaving rats by continuously delivering 24 mW to the mobile unit for >7 h inside a standard homecage. PMID:26257586

An Inductively-Powered Wireless Neural Recording System with a Charge Sampling Analog Front-End.

PubMed

Lee, Seung Bae; Lee, Byunghun; Kiani, Mehdi; Mahmoudi, Babak; Gross, Robert; Ghovanloo, Maysam

2016-01-15

An inductively-powered wireless integrated neural recording system (WINeR-7) is presented for wireless and battery less neural recording from freely-behaving animal subjects inside a wirelessly-powered standard homecage. The WINeR-7 system employs a novel wide-swing dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which performs amplification, filtering, sampling, and analog-to-time conversion (ATC) with minimal interference and small amount of power. The output of the DSCS-AFE produces a pseudo-digital pulse width modulated (PWM) signal. A circular shift register (CSR) time division multiplexes (TDM) the PWM pulses to create a TDM-PWM signal, which is fed into an on-chip 915 MHz transmitter (Tx). The AFE and Tx are supplied at 1.8 V and 4.2 V, respectively, by a power management block, which includes a high efficiency active rectifier and automatic resonance tuning (ART), operating at 13.56 MHz. The 8-ch system-on-a-chip (SoC) was fabricated in a 0.35-μm CMOS process, occupying 5.0 × 2.5 mm 2 and consumed 51.4 mW. For each channel, the sampling rate is 21.48 kHz and the power consumption is 19.3 μW. In vivo experiments were conducted on freely behaving rats in an energized homecage by continuously delivering 51.4 mW to the WINeR-7 system in a closed-loop fashion and recording local field potentials (LFP).

An Overview of the Development of High Temperature Wireless Smart Sensor Technology

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2014-01-01

The harsh environment inherent in propulsion systems is especially challenging for Smart Sensor Systems; this paper addresses technology development for such applications. A basic sensing system for high temperature wireless pressure monitoring composed of a sensor, electronics, and wireless communication with scavenged power developed for health monitoring of aircraft engines and other high temperature applications has been demonstrated at 475 C. Other efforts will be discussed including a brief overview of the status of high temperature electronics and sensors, as well as their use and applications.

A 0.18 μm CMOS low-power radiation sensor for asynchronous event-driven UWB wireless transmission

NASA Astrophysics Data System (ADS)

Bastianini, S.; Crepaldi, M.; Demarchi, D.; Gabrielli, A.; Lolli, M.; Margotti, A.; Villani, G.; Zhang, Z.; Zoccoli, G.

2013-12-01

The paper describes the design of a readout element, proposed as a radiation monitor, which implements an embedded sensor based on a floating-gate transistor. The paper shows the design of a microelectronic circuit composed of a sensor, an oscillator, a modulator, a transmitter and an integrated antenna. A prototype chip has recently been fabricated and tested exploiting a commercial 180 nm, four metal CMOS technology. Simulation results of the entire behavior of the circuit before submission are presented along with some measurements of the actual chip response. In addition, preliminary tests of the performance of the Ultra-Wide Band transmission via the integrated antenna are summarized. As the complete chip prototype area is less than 1 mm2, the chip fits a large variety of applications, from spot radiation monitoring systems in medicine to punctual measurements of radiation level in High-Energy Physics experiments. A sensitivity of 1 mV/rad was estimated within an absorbed dose range up to 10 krad and a total power consumption of about 165 μW.

Real-Time QoS Routing Protocols in Wireless Multimedia Sensor Networks: Study and Analysis.

PubMed

Alanazi, Adwan; Elleithy, Khaled

2015-09-02

Many routing protocols have been proposed for wireless sensor networks. These routing protocols are almost always based on energy efficiency. However, recent advances in complementary metal-oxide semiconductor (CMOS) cameras and small microphones have led to the development of Wireless Multimedia Sensor Networks (WMSN) as a class of wireless sensor networks which pose additional challenges. The transmission of imaging and video data needs routing protocols with both energy efficiency and Quality of Service (QoS) characteristics in order to guarantee the efficient use of the sensor nodes and effective access to the collected data. Also, with integration of real time applications in Wireless Senor Networks (WSNs), the use of QoS routing protocols is not only becoming a significant topic, but is also gaining the attention of researchers. In designing an efficient QoS routing protocol, the reliability and guarantee of end-to-end delay are critical events while conserving energy. Thus, considerable research has been focused on designing energy efficient and robust QoS routing protocols. In this paper, we present a state of the art research work based on real-time QoS routing protocols for WMSNs that have already been proposed. This paper categorizes the real-time QoS routing protocols into probabilistic and deterministic protocols. In addition, both categories are classified into soft and hard real time protocols by highlighting the QoS issues including the limitations and features of each protocol. Furthermore, we have compared the performance of mobility-aware query based real-time QoS routing protocols from each category using Network Simulator-2 (NS2). This paper also focuses on the design challenges and future research directions as well as highlights the characteristics of each QoS routing protocol.

Real-Time QoS Routing Protocols in Wireless Multimedia Sensor Networks: Study and Analysis

PubMed Central

Alanazi, Adwan; Elleithy, Khaled

2015-01-01

Many routing protocols have been proposed for wireless sensor networks. These routing protocols are almost always based on energy efficiency. However, recent advances in complementary metal-oxide semiconductor (CMOS) cameras and small microphones have led to the development of Wireless Multimedia Sensor Networks (WMSN) as a class of wireless sensor networks which pose additional challenges. The transmission of imaging and video data needs routing protocols with both energy efficiency and Quality of Service (QoS) characteristics in order to guarantee the efficient use of the sensor nodes and effective access to the collected data. Also, with integration of real time applications in Wireless Senor Networks (WSNs), the use of QoS routing protocols is not only becoming a significant topic, but is also gaining the attention of researchers. In designing an efficient QoS routing protocol, the reliability and guarantee of end-to-end delay are critical events while conserving energy. Thus, considerable research has been focused on designing energy efficient and robust QoS routing protocols. In this paper, we present a state of the art research work based on real-time QoS routing protocols for WMSNs that have already been proposed. This paper categorizes the real-time QoS routing protocols into probabilistic and deterministic protocols. In addition, both categories are classified into soft and hard real time protocols by highlighting the QoS issues including the limitations and features of each protocol. Furthermore, we have compared the performance of mobility-aware query based real-time QoS routing protocols from each category using Network Simulator-2 (NS2). This paper also focuses on the design challenges and future research directions as well as highlights the characteristics of each QoS routing protocol. PMID:26364639

An RFID tag system-on-chip with wireless ECG monitoring for intelligent healthcare systems.

PubMed

Wang, Cheng-Pin; Lee, Shuenn-Yuh; Lai, Wei-Chih

2013-01-01

This paper presents a low-power wireless ECG acquisition system-on-chip (SoC), including an RF front-end circuit, a power unit, an analog front-end circuit, and a digital circuitry. The proposed RF front-end circuit can provide the amplitude shift keying demodulation and distance to digital conversion to accurately receive the data from the reader. The received data will wake up the power unit to provide the required supply voltages of analog front-end (AFE) and digital circuitry. The AFE, including a pre-amplifier, an analog filter, a post-amplifier, and an analog-to-digital converter, is used for the ECG acquisition. Moreover, the EPC Class I Gen 2 UHF standard is employed in the digital circuitry for the handshaking of communication and the control of the system. The proposed SoC has been implemented in 0.18-µm standard CMOS process and the measured results reveal the communication is compatible to the RFID protocol. The average power consumption for the operating chip is 12 µW. Using a Sony PR44 battery to the supply power (605mAh@1.4V), the RFID tag SoC operates continuously for about 50,000 hours (>5 years), which is appropriate for wireless wearable ECG monitoring systems.

A 400 MHz Wireless Neural Signal Processing IC With 625 $\\times$ On-Chip Data Reduction and Reconfigurable BFSK/QPSK Transmitter Based on Sequential Injection Locking.

PubMed

Teng, Kok-Hin; Wu, Tong; Liu, Xiayun; Yang, Zhi; Heng, Chun-Huat

2017-06-01

An 8-channel wireless neural signal processing IC, which can perform real-time spike detection, alignment, and feature extraction, and wireless data transmission is proposed. A reconfigurable BFSK/QPSK transmitter (TX) at MICS/MedRadio band is incorporated to support different data rate requirement. By using an Exponential Component-Polynomial Component (EC-PC) spike processing unit with an incremental principal component analysis (IPCA) engine, the detection of neural spikes with poor SNR is possible while achieving 625× data reduction. For the TX, a dual-channel at 401 MHz and 403.8 MHz are supported by applying sequential injection locked techniques while attaining phase noise of -102 dBc/Hz at 100 kHz offset. From the measurement, error vector magnitude (EVM) of 4.60%/9.55% with power amplifier (PA) output power of -15 dBm is achieved for the QPSK at 8 Mbps and the BFSK at 12.5 kbps. Fabricated in 65 nm CMOS with an active area of 1 mm 2 , the design consumes a total current of 5  ∼ 5.6 mA with a maximum energy efficiency of 0.7 nJ/b.

Design of an Embedded CMOS Temperature Sensor for Passive RFID Tag Chips.

PubMed

Deng, Fangming; He, Yigang; Li, Bing; Zhang, Lihua; Wu, Xiang; Fu, Zhihui; Zuo, Lei

2015-05-18

This paper presents an ultra-low embedded power temperature sensor for passive RFID tags. The temperature sensor converts the temperature variation to a PTAT current, which is then transformed into a temperature-controlled frequency. A phase locked loop (PLL)-based sensor interface is employed to directly convert this temperature-controlled frequency into a corresponding digital output without an external reference clock. The fabricated sensor occupies an area of 0.021 mm2 using the TSMC 0.18 1P6M mixed-signal CMOS process. Measurement results of the embedded sensor within the tag system shows a 92 nW power dissipation under 1.0 V supply voltage at room temperature, with a sensing resolution of 0.15 °C/LSB and a sensing accuracy of -0.7/0.6 °C from -30 °C to 70 °C after 1-point calibration at 30 °C.

Design of an Embedded CMOS Temperature Sensor for Passive RFID Tag Chips

PubMed Central

Deng, Fangming; He, Yigang; Li, Bing; Zhang, Lihua; Wu, Xiang; Fu, Zhihui; Zuo, Lei

2015-01-01

This paper presents an ultra-low embedded power temperature sensor for passive RFID tags. The temperature sensor converts the temperature variation to a PTAT current, which is then transformed into a temperature-controlled frequency. A phase locked loop (PLL)-based sensor interface is employed to directly convert this temperature-controlled frequency into a corresponding digital output without an external reference clock. The fabricated sensor occupies an area of 0.021 mm2 using the TSMC 0.18 1P6M mixed-signal CMOS process. Measurement results of the embedded sensor within the tag system shows a 92 nW power dissipation under 1.0 V supply voltage at room temperature, with a sensing resolution of 0.15 °C/LSB and a sensing accuracy of −0.7/0.6 °C from −30 °C to 70 °C after 1-point calibration at 30 °C. PMID:25993518

A CMOS current-mode log(x) and log(1/x) functions generator

NASA Astrophysics Data System (ADS)

Al-Absi, Munir A.; Al-Tamimi, Karama M.

2014-08-01

A novel Complementary Metal Oxide Semiconductor (CMOS) current-mode low-voltage and low-power controllable logarithmic function circuit is presented. The proposed design utilises one Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The proposed design provides high dynamic range, controllable amplitude, high accuracy and is insensitive to temperature variations. The circuit operates on a ±0.6 V power supply and consumes 0.3 μW. The functionality of the proposed circuit was verified using HSPICE with 0.35 μm 2P4M CMOS process technology.

Development of cryogenic CMOS Readout ASICs for the Point-Contact HPGe Detectors for Dark Matter Search and Neutrino Experiments

NASA Astrophysics Data System (ADS)

Deng, Zhi; He, Li; Liu, Feng; Liu, Yinong; Xue, Tao; Li, Yulan; Yue, Qian

2017-05-01

The paper presents the developments of two cryogenic readout ASICs for the point-contact HPGe detectors for dark matter search and neutrino experiments. Extremely low noise readout electronics were demanded and the capability of working at cryogenic temperatures may bring great advantages. The first ASIC was a monolithic CMOS charge sensitive preamplifier with its noise optimized for ∼1 pF input capacitance. The second ASIC was a waveform recorder based on switched capacitor array. These two ASICs were fabricated in CMOS 350 nm and 180 nm processes respectively. The prototype chips were tested and showed promising results. Both ASICs worked well at low temperature. The preamplifier had achieved ENC of 10.3 electrons with 0.7 pF input capacitance and the SCA chip could run at 9 bit effective resolution and 25 MSPS sampling rate.

A linearization time-domain CMOS smart temperature sensor using a curvature compensation oscillator.

PubMed

Chen, Chun-Chi; Chen, Hao-Wen

2013-08-28

This paper presents an area-efficient time-domain CMOS smart temperature sensor using a curvature compensation oscillator for linearity enhancement with a -40 to 120 °C temperature range operability. The inverter-based smart temperature sensors can substantially reduce the cost and circuit complexity of integrated temperature sensors. However, a large curvature exists on the temperature-to-time transfer curve of the inverter-based delay line and results in poor linearity of the sensor output. For cost reduction and error improvement, a temperature-to-pulse generator composed of a ring oscillator and a time amplifier was used to generate a thermal sensing pulse with a sufficient width proportional to the absolute temperature (PTAT). Then, a simple but effective on-chip curvature compensation oscillator is proposed to simultaneously count and compensate the PTAT pulse with curvature for linearization. With such a simple structure, the proposed sensor possesses an extremely small area of 0.07 mm2 in a TSMC 0.35-mm CMOS 2P4M digital process. By using an oscillator-based scheme design, the proposed sensor achieves a fine resolution of 0.045 °C without significantly increasing the circuit area. With the curvature compensation, the inaccuracy of -1.2 to 0.2 °C is achieved in an operation range of -40 to 120 °C after two-point calibration for 14 packaged chips. The power consumption is measured as 23 mW at a sample rate of 10 samples/s.

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

PubMed Central

2011-01-01

Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature. PMID:21892938

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

2009-01-01

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics

NASA Astrophysics Data System (ADS)

Najafizadeh, Laleh; Bellini, Marco; Prakash, A. P. Gnana; Espinel, Gustavo A.; Cressler, John D.; Marshall, Paul W.; Marshall, Cheryl J.

2006-12-01

A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme environment operational conditions is presented. The voltage reference circuits were designed in two distinct SiGe BiCMOS technology platforms (first generation (50 GHz) and third generation (200 GHz)) in order to investigate the effect of technology scaling. The circuits were irradiated at both room temperature and at 77 K. Measurement results from the experiments indicate that the proton-induced changes in the SiGe bandgap references are minor, even down to cryogenic temperatures, clearly good news for the potential application of SiGe mixed-signal circuits in emerging extreme environments

Development of self-powered wireless high temperature electrochemical sensor for in situ corrosion monitoring of coal-fired power plant.

PubMed

Aung, Naing Naing; Crowe, Edward; Liu, Xingbo

2015-03-01

Reliable wireless high temperature electrochemical sensor technology is needed to provide in situ corrosion information for optimal predictive maintenance to ensure a high level of operational effectiveness under the harsh conditions present in coal-fired power generation systems. This research highlights the effectiveness of our novel high temperature electrochemical sensor for in situ coal ash hot corrosion monitoring in combination with the application of wireless communication and an energy harvesting thermoelectric generator (TEG). This self-powered sensor demonstrates the successful wireless transmission of both corrosion potential and corrosion current signals to a simulated control room environment. Copyright © 2014 ISA. All rights reserved.

Solar XUV Imaging and Non-dispersive Spectroscopy for Solar-C Enabled by Scientific CMOS APS Arrays

NASA Astrophysics Data System (ADS)

Stern, Robert A.; Lemen, J. R.; Shing, L.; Janesick, J.; Tower, J.

2009-05-01

Monolithic CMOS Advanced Pixel Sensor (APS) arrays are showing great promise as eventual replacements for the current workhorse of solar physics focal planes, the scientific CCD. CMOS APS devices have individually addressable pixels, increased radiation tolerance compared to CCDs, and require lower clock voltages, and thus lower power. However, commercially available CMOS chips, while suitable for use with intensifiers or fluorescent coatings, are generally not optimized for direct detection of EUV and X-ray photons. A high performance scientific CMOS array designed for these wavelengths will have significant new capabilities compared to CCDs, including the ability to read out small regions of the solar disk at high (sub sec) cadence, count single X-ray photons with Fano-limited energy resolution, and even operate at room temperature with good noise performance. Such capabilities will be crucial for future solar X-ray and EUV missions such as Solar-C. Sarnoff Corporation has developed scientific grade, monolithic CMOS arrays for X-ray imaging and photon counting. One prototype device, the "minimal" array, has 8 um pixels, is 15 to 25 um thick, is fabricated on high-resistivity ( 10 to 20 kohm-cm) Si wafers, and can be back-illuminated. These characteristics yield high quantum efficiency and high spatial resolution with minimal charge sharing among pixels, making it ideal for the detection of keV X-rays. When used with digital correlated double sampling, the array has demonstrated noise performance as low as 2 e, allowing single photon counting of X-rays over a range of temperatures. We report test results for this device in X-rays, and discuss the implications for future solar space missions.

Monolithic CMUT on CMOS Integration for Intravascular Ultrasound Applications

PubMed Central

Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F. Levent

2012-01-01

One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter based volumetric imaging arrays where the elements need to be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom designed CMOS receiver electronics from a commercial IC foundry. The CMUT on CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT to CMOS interconnection. This CMUT to CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire bonding method. Characterization experiments indicate that the CMUT on CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Experiments on a 1.6 mm diameter dual-ring CMUT array with a 15 MHz center frequency show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging CTOs located 1 cm away from the CMUT array. PMID:23443701

CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

PubMed

Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

2011-04-01

In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

A Compact and Low Power RO PUF with High Resilience to the EM Side-Channel Attack and the SVM Modelling Attack of Wireless Sensor Networks

PubMed Central

Cao, Yuan; Ye, Wenbin; Han, Qingbang; Pan, Xiaofang

2018-01-01

Authentication is a crucial security service for the wireless sensor networks (WSNs) in versatile domains. The deployment of WSN devices in the untrusted open environment and the resource-constrained nature make the on-chip authentication an open challenge. The strong physical unclonable function (PUF) came in handy as light-weight authentication security primitive. In this paper, we present the first ring oscillator (RO) based strong physical unclonable function (PUF) with high resilience to both the electromagnetic (EM) side-channel attack and the support vector machine (SVM) modelling attack. By employing an RO based PUF architecture with the current starved inverter as the delay cell, the oscillation power is significantly reduced to minimize the emitted EM signal, leading to greatly enhanced immunity to the EM side-channel analysis attack. In addition, featuring superior reconfigurability due to the conspicuously simplified circuitries, the proposed implementation is capable of withstanding the SVM modelling attack by generating and comparing a large number of RO frequency pairs. The reported experimental results validate the prototype of a 9-stage RO PUF fabricated using standard 65 nm complementary-metal-oxide-semiconductor (CMOS) process. Operating at the supply voltage of 1.2 V and the frequency of 100 KHz, the fabricated RO PUF occupies a compact silicon area of 250 μm2 and consumes a power as low as 5.16 μW per challenge-response pair (CRP). Furthermore, the uniqueness and the worst-case reliability are measured to be 50.17% and 98.30% for the working temperature range of −40∼120 ∘C and the supply voltage variation of ±2%, respectively. Thus, the proposed PUF is applicable for the low power, low cost and secure WSN communications. PMID:29360790

A Compact and Low Power RO PUF with High Resilience to the EM Side-Channel Attack and the SVM Modelling Attack of Wireless Sensor Networks.

PubMed

Cao, Yuan; Zhao, Xiaojin; Ye, Wenbin; Han, Qingbang; Pan, Xiaofang

2018-01-23

Authentication is a crucial security service for the wireless sensor networks (WSNs) in versatile domains. The deployment of WSN devices in the untrusted open environment and the resource-constrained nature make the on-chip authentication an open challenge. The strong physical unclonable function (PUF) came in handy as light-weight authentication security primitive. In this paper, we present the first ring oscillator (RO) based strong physical unclonable function (PUF) with high resilience to both the electromagnetic (EM) side-channel attack and the support vector machine (SVM) modelling attack. By employing an RO based PUF architecture with the current starved inverter as the delay cell, the oscillation power is significantly reduced to minimize the emitted EM signal, leading to greatly enhanced immunity to the EM side-channel analysis attack. In addition, featuring superior reconfigurability due to the conspicuously simplified circuitries, the proposed implementation is capable of withstanding the SVM modelling attack by generating and comparing a large number of RO frequency pairs. The reported experimental results validate the prototype of a 9-stage RO PUF fabricated using standard 65 nm complementary-metal-oxide-semiconductor (CMOS) process. Operating at the supply voltage of 1.2 V and the frequency of 100 KHz, the fabricated RO PUF occupies a compact silicon area of 250 μ m 2 and consumes a power as low as 5.16 μ W per challenge-response pair (CRP). Furthermore, the uniqueness and the worst-case reliability are measured to be 50.17% and 98.30% for the working temperature range of -40∼120 ∘ C and the supply voltage variation of ±2%, respectively. Thus, the proposed PUF is applicable for the low power, low cost and secure WSN communications.

Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

NASA Astrophysics Data System (ADS)

Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2017-05-01

A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

NASA Astrophysics Data System (ADS)

Davidson, Bradley Darren

This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different WALD fabrication technologies two generations of 2-terminal WALD NEMS switches have been developed. These devices have functional gap heights of 30-50 nm, and actuation voltages typically ranging from 3--5 Volts. Via the extension of a two terminal WALD technology novel 3-terminal WALD NEMS devices were developed. These devices have actuation voltages ranging from 1.5--3 Volts, reliabilities in excess of 2 million cycles, and have been designed to be the fundamental building blocks for WALD NEMS complementary inverters. Through the development of these devices several advancements in the modeling and design of thin-film NEMS devices were achieved. A new model was developed to better characterize pre-actuation currents commonly measured for NEMS switches with nano-scale gate-to-source gap heights. The developed model is an extension of the standard field-emission model and considers the electromechanical response, and electric field effects specific to thin-film NEMS switches. Finally, a multi-physics FEM/FD based model was developed to simulate the dynamic behavior of 2 or 3-terminal electrostatically actuated devices whose electrostatic domains have an aspect ratio on the order of 10-3. The model uses a faux-Lagrangian finite difference method to solve Laplaces equation in a quasi-statatically deforming domain. This model allows for the numerical characterization and design of thin-film NEMS devices not feasible using typical non-specialized BEM/FEM based software. Using this model several novel and feasible designs for fixed-fixed 3-terminal WALD NEMS switches capable for the construction of complementary inverters were discovered.

High Temperature, Wireless Seismometer Sensor for Venus

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Scardelletti, Maximilian C.; Taylor, Brandt; Beard, Steve; Meredith, Roger D.; Beheim, Glenn M.; Hunter Gary W.; Kiefer, Walter S.

2012-01-01

Space agency mission plans state the need to measure the seismic activity on Venus. Because of the high temperature on Venus (462? C average surface temperature) and the difficulty in placing and wiring multiple sensors using robots, a high temperature, wireless sensor using a wide bandgap semiconductor is an attractive option. This paper presents the description and proof of concept measurements of a high temperature, wireless seismometer sensor for Venus. A variation in inductance of a coil caused by the movement of an aluminum probe held in the coil and attached to a balanced leaf-spring seismometer causes a variation of 700 Hz in the transmitted signal from the oscillator/sensor system at 426? C. This result indicates that the concept may be used on Venus.

CMOS-Compatible Room-Temperature Rectifier Toward Terahertz Radiation Detection

NASA Astrophysics Data System (ADS)

Varlamava, Volha; De Amicis, Giovanni; Del Monte, Andrea; Perticaroli, Stefano; Rao, Rosario; Palma, Fabrizio

2016-08-01

In this paper, we present a new rectifying device, compatible with the technology of CMOS image sensors, suitable for implementing a direct-conversion detector operating at room temperature for operation at up to terahertz frequencies. The rectifying device can be obtained by introducing some simple modifications of the charge-storage well in conventional CMOS integrated circuits, making the proposed solution easy to integrate with the existing imaging systems. The rectifying device is combined with the different elements of the detector, composed of a 3D high-performance antenna and a charge-storage well. In particular, its position just below the edge of the 3D antenna takes maximum advantage of the high electric field concentrated by the antenna itself. In addition, the proposed structure ensures the integrity of the charge-storage well of the detector. In the structure, it is not necessary to use very scaled and costly technological nodes, since the CMOS transistor only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed junction are reported and discussed. The overall performances of the entire detector in terms of noise equivalent power (NEP) are evaluated by combining low-frequency measurements of the rectifier with numerical simulations of the 3D antenna and the semiconductor structure at 1 THz, allowing prediction of the achievable NEP.

Monolithic CMUT-on-CMOS integration for intravascular ultrasound applications.

PubMed

Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F Levent

2011-12-01

One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter-based volumetric imaging arrays, for which the elements must be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom-designed CMOS receiver electronics from a commercial IC foundry. The CMUT-on-CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low-temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT-to-CMOS interconnection. This CMUT-to-CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire-bonding method. Characterization experiments indicate that the CMUT-on-CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Ex- periments on a 1.6-mm-diameter dual-ring CMUT array with a center frequency of 15 MHz show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging chronic total occlusions located 1 cm from the CMUT array.

Miniature atomic scalar magnetometer for space based on the rubidium isotope 87Rb.

PubMed

Korth, Haje; Strohbehn, Kim; Tejada, Francisco; Andreou, Andreas G; Kitching, John; Knappe, Svenja; Lehtonen, S John; London, Shaughn M; Kafel, Matiwos

2016-08-01

A miniature atomic scalar magnetometer based on the rubidium isotope 87 Rb was developed for operation in space. The instrument design implements both M x and M z mode operation and leverages a novel microelectromechanical system (MEMS) fabricated vapor cell and a custom silicon-on-sapphire (SOS) complementary metal-oxide-semiconductor (CMOS) integrated circuit. The vapor cell has a volume of only 1 mm 3 so that it can be efficiently heated to its operating temperature by a specially designed, low-magnetic-field-generating resistive heater implemented in multiple metal layers of the transparent sapphire substrate of the SOS-CMOS chips. The SOS-CMOS chip also hosts the Helmholtz coil and associated circuitry to stimulate the magnetically sensitive atomic resonance and temperature sensors. The prototype instrument has a total mass of fewer than 500 g and uses less than 1 W of power, while maintaining a sensitivity of 15 pT/√Hz at 1 Hz, comparable to present state-of-the-art absolute magnetometers.

NASA Tech Briefs, February 2011

NASA Technical Reports Server (NTRS)

2011-01-01

Topics covered include: Multi-Segment Radius Measurement Using an Absolute Distance Meter Through a Null Assembly; Fiber-Optic Magnetic-Field-Strength Measurement System for Lightning Detection; Photocatalytic Active Radiation Measurements and Use; Computer Generated Hologram System for Wavefront Measurement System Calibration; Non-Contact Thermal Properties Measurement with Low-Power Laser and IR Camera System; SpaceCube 2.0: An Advanced Hybrid Onboard Data Processor; CMOS Imager Has Better Cross-Talk and Full-Well Performance; High-Performance Wireless Telemetry; Telemetry-Based Ranging; JWST Wavefront Control Toolbox; Java Image I/O for VICAR, PDS, and ISIS; X-Band Acquisition Aid Software; Antimicrobial-Coated Granules for Disinfecting Water; Range 7 Scanner Integration with PaR Robot Scanning System; Methods of Antimicrobial Coating of Diverse Materials; High-Operating-Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength; A Model of Reduced Kinetics for Alkane Oxidation Using Constituents and Species for N-Heptane; Thermally Conductive Tape Based on Carbon Nanotube Arrays; Two Catalysts for Selective Oxidation of Contaminant Gases; Nanoscale Metal Oxide Semiconductors for Gas Sensing; Lightweight, Ultra-High-Temperature, CMC-Lined Carbon/Carbon Structures; Sample Acquisition and Handling System from a Remote Platform; Improved Rare-Earth Emitter Hollow Cathode; High-Temperature Smart Structures for Engine Noise Reduction and Performance Enhancement; Cryogenic Scan Mechanism for Fourier Transform Spectrometer; Piezoelectric Rotary Tube Motor; Thermoelectric Energy Conversion Technology for High-Altitude Airships; Combustor Computations for CO2-Neutral Aviation; Use of Dynamic Distortion to Predict and Alleviate Loss of Control; Cycle Time Reduction in Trapped Mercury Ion Atomic Frequency Standards; and A (201)Hg+ Comagnetometer for (199)Hg+ Trapped Ion Space Atomic Clocks.

A 0.8-4.2 GHz monolithic all-digital PLL based frequency synthesizer for wireless communications

NASA Astrophysics Data System (ADS)

Yuanxin, Zhao; Yuanpei, Gao; Wei, Li; Ning, Li; Junyan, Ren

2015-01-01

A 0.8-4.2 GHz monolithic all-digital PLL based frequency synthesizer for wireless communications is successfully realized by the 130 nm CMOS process. A series of novel methods are proposed in this paper. Two band DCOs with high frequency resolution are utilized to cover the frequency band of interest, which is as wide as 2.5 to 5 GHz. An overflow counter is proposed to prevent the “pulse-swallowing” phenomenon so as to significantly reduce the locking time. A NTW-clamp digital module is also proposed to prevent the overflow of the loop control word. A modified programmable divider is presented to prevent the failure operation at the boundary. The measurement results show that the output frequency range of this frequency synthesizer is 0.8-4.2 GHz. The locking time achieves a reduction of 84% at 2.68 GHz. The best in-band and out-band phase noise performances have reached -100 dBc/Hz, and -125 dBc/Hz respectively. The lowest reference spur is -58 dBc.

0.5 V and 0.43 pJ/bit Capacitive Sensor Interface for Passive Wireless Sensor Systems

PubMed Central

Beriain, Andoni; Gutierrez, Iñigo; Solar, Hector; Berenguer, Roc

2015-01-01

This paper presents an ultra low-power and low-voltage pulse-width modulation based ratiometric capacitive sensor interface. The interface was designed and fabricated in a standard 90 nm CMOS 1P9M technology. The measurements show an effective resolution of 10 bits using 0.5 V of supply voltage. The active occupied area is only 0.0045 mm2 and the Figure of Merit (FOM), which takes into account the energy required per conversion bit, is 0.43 pJ/bit. Furthermore, the results show low sensitivity to PVT variations due to the proposed ratiometric architecture. In addition, the sensor interface was connected to a commercial pressure transducer and the measurements of the resulting complete pressure sensor show a FOM of 0.226 pJ/bit with an effective linear resolution of 7.64 bits. The results validate the use of the proposed interface as part of a pressure sensor, and its low-power and low-voltage characteristics make it suitable for wireless sensor networks and low power consumer electronics. PMID:26343681

0.5 V and 0.43 pJ/bit Capacitive Sensor Interface for Passive Wireless Sensor Systems.

PubMed

Beriain, Andoni; Gutierrez, Iñigo; Solar, Hector; Berenguer, Roc

2015-08-28

This paper presents an ultra low-power and low-voltage pulse-width modulation based ratiometric capacitive sensor interface. The interface was designed and fabricated in a standard 90 nm CMOS 1P9M technology. The measurements show an effective resolution of 10 bits using 0.5 V of supply voltage. The active occupied area is only 0.0045 mm2 and the Figure of Merit (FOM), which takes into account the energy required per conversion bit, is 0.43 pJ/bit. Furthermore, the results show low sensitivity to PVT variations due to the proposed ratiometric architecture. In addition, the sensor interface was connected to a commercial pressure transducer and the measurements of the resulting complete pressure sensor show a FOM of 0.226 pJ/bit with an effective linear resolution of 7.64 bits. The results validate the use of the proposed interface as part of a pressure sensor, and its low-power and low-voltage characteristics make it suitable for wireless sensor networks and low power consumer electronics.

Low-power wireless ECG acquisition and classification system for body sensor networks.

PubMed

Lee, Shuenn-Yuh; Hong, Jia-Hua; Hsieh, Cheng-Han; Liang, Ming-Chun; Chang Chien, Shih-Yu; Lin, Kuang-Hao

2015-01-01

A low-power biosignal acquisition and classification system for body sensor networks is proposed. The proposed system consists of three main parts: 1) a high-pass sigma delta modulator-based biosignal processor (BSP) for signal acquisition and digitization, 2) a low-power, super-regenerative on-off keying transceiver for short-range wireless transmission, and 3) a digital signal processor (DSP) for electrocardiogram (ECG) classification. The BSP and transmitter circuits, which are the body-end circuits, can be operated for over 80 days using two 605 mAH zinc-air batteries as the power supply; the power consumption is 586.5 μW. As for the radio frequency receiver and DSP, which are the receiving-end circuits that can be integrated in smartphones or personal computers, power consumption is less than 1 mW. With a wavelet transform-based digital signal processing circuit and a diagnosis control by cardiologists, the accuracy of beat detection and ECG classification are close to 99.44% and 97.25%, respectively. All chips are fabricated in TSMC 0.18-μm standard CMOS process.

Reconfigurable Resonant Regulating Rectifier With Primary Equalization for Extended Coupling- and Loading-Range in Bio-Implant Wireless Power Transfer.

PubMed

Li, Xing; Meng, Xiaodong; Tsui, Chi-Ying; Ki, Wing-Hung

2015-12-01

Wireless power transfer using reconfigurable resonant regulating (R(3)) rectification suffers from limited range in accommodating varying coupling and loading conditions. A primary-assisted regulation principle is proposed to mitigate these limitations, of which the amplitude of the rectifier input voltage on the secondary side is regulated by accordingly adjusting the voltage amplitude Veq on the primary side. A novel current-sensing method and calibration scheme track Veq on the primary side. A ramp generator simultaneously provides three clock signals for different modules. Both the primary equalizer and the R(3) rectifier are implemented as custom integrated circuits fabricated in a 0.35 μm CMOS process, with the global control implemented in FPGA. Measurements show that with the primary equalizer, the workable coupling and loading ranges are extended by 250% at 120 mW load and 300% at 1.2 cm coil distance compared to the same system without the primary equalizer. A maximum rectifier efficiency of 92.5% and a total system efficiency of 62.4% are demonstrated.

An RF energy harvesting power management circuit for appropriate duty-cycled operation

NASA Astrophysics Data System (ADS)

Shirane, Atsushi; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

2015-04-01

In this study, we present an RF energy harvesting power management unit (PMU) for battery-less wireless sensor devices (WSDs). The proposed PMU realizes a duty-cycled operation that is divided into the energy charging time and discharging time. The proposed PMU detects two types of timing, thus, the appropriate timing for the activation can be recognized. The activation of WSDs at the proper timing leads to energy efficient operation and stable wireless communication. The proposed PMU includes a hysteresis comparator (H-CMP) and an RF signal detector (RF-SD) to detect the timings. The proposed RF-SD can operate without the degradation of charge efficiency by reusing the RF energy harvester (RF-EH) and H-CMP. The PMU fabricated in a 180 nm Si CMOS demonstrated the charge operation using the RF signal at 915 MHz and the two types of timing detection with less than 124 nW in the charge phase. Furthermore, in the active phase, the PMU generates a 0.5 V regulated power supply from the charged energy.

Toward a distributed free-floating wireless implantable neural recording system.

PubMed

Pyungwoo Yeon; Xingyuan Tong; Byunghun Lee; Mirbozorgi, Abdollah; Ash, Bruce; Eckhardt, Helmut; Ghovanloo, Maysam

2016-08-01

To understand the complex correlations between neural networks across different regions in the brain and their functions at high spatiotemporal resolution, a tool is needed for obtaining long-term single unit activity (SUA) across the entire brain area. The concept and preliminary design of a distributed free-floating wireless implantable neural recording (FF-WINeR) system are presented, which can enabling SUA acquisition by dispersedly implanting tens to hundreds of untethered 1 mm3 neural recording probes, floating with the brain and operating wirelessly across the cortical surface. For powering FF-WINeR probes, a 3-coil link with an intermediate high-Q resonator provides a minimum S21 of -22.22 dB (in the body medium) and -21.23 dB (in air) at 2.8 cm coil separation, which translates to 0.76%/759 μW and 0.6%/604 μW of power transfer efficiency (PTE) / power delivered to a 9 kΩ load (PDL), in body and air, respectively. A mock-up FF-WINeR is implemented to explore microassembly method of the 1×1 mm2 micromachined silicon die with a bonding wire-wound coil and a tungsten micro-wire electrode. Circuit design methods to fit the active circuitry in only 0.96 mm2 of die area in a 130 nm standard CMOS process, and satisfy the strict power and performance requirements (in simulations) are discussed.

Alumina ceramic based high-temperature performance of wireless passive pressure sensor

NASA Astrophysics Data System (ADS)

Wang, Bo; Wu, Guozhu; Guo, Tao; Tan, Qiulin

2016-12-01

A wireless passive pressure sensor equivalent to inductive-capacitive (LC) resonance circuit and based on alumina ceramic is fabricated by using high temperature sintering ceramic and post-fire metallization processes. Cylindrical copper spiral reader antenna and insulation layer are designed to realize the wireless measurement for the sensor in high temperature environment. The high temperature performance of the sensor is analyzed and discussed by studying the phase-frequency and amplitude-frequency characteristics of reader antenna. The average frequency change of sensor is 0.68 kHz/°C when the temperature changes from 27°C to 700°C and the relative change of twice measurements is 2.12%, with high characteristic of repeatability. The study of temperature-drift characteristic of pressure sensor in high temperature environment lays a good basis for the temperature compensation methods and insures the pressure signal readout accurately.

High-Temperature Dielectric Properties of Aluminum Nitride Ceramic for Wireless Passive Sensing Applications

PubMed Central

Liu, Jun; Yuan, Yukun; Ren, Zhong; Tan, Qiulin; Xiong, Jijun

2015-01-01

The accurate characterization of the temperature-dependent permittivity of aluminum nitride (AlN) ceramic is quite critical to the application of wireless passive sensors for harsh environments. Since the change of the temperature-dependent permittivity will vary the ceramic-based capacitance, which can be converted into the change of the resonant frequency, an LC resonator, based on AlN ceramic, is prepared by the thick film technology. The dielectric properties of AlN ceramic are measured by the wireless coupling method, and discussed within the temperature range of 12 °C (room temperature) to 600 °C. The results show that the extracted relative permittivity of ceramic at room temperature is 2.3% higher than the nominal value of 9, and increases from 9.21 to 10.79, and the quality factor Q is decreased from 29.77 at room temperature to 3.61 at 600 °C within the temperature range. PMID:26370999

Pyroelectric Ceramics as Temperature Sensors for Energy System Applications

NASA Astrophysics Data System (ADS)

Silva, Jorge Luis

Temperature is continuously monitored in energy systems to ensure safe operation temperatures, increase efficiency and avoid high emissions. Most of energy systems operate at high temperature and harsh environments to achieve higher efficiencies, therefore temperature sensing devices that can operate under these conditions are highly desired. The interest has increased in temperature sensors capable to operate and in harsh environments and temperature sensors capable to transmit thermal information wirelessly. One of the solutions for developing harsh environment sensors is to use ceramic materials, especially functional ceramics such as pyroelectrics. Pyroelectric ceramics could be used to develop active sensors for both temperature and pressure due to their capabilities in coupling energy among mechanical, thermal, and electrical domains. In this study, two different pyroelectric materials were used to develop two different temperature sensors systems. First, a high temperature sensor was developed using a lithium niobate (LiNbO3) pyroelectric ceramic. With its Curie temperature of 1210 °C, lithium niobate is capable to maintain its pyroelectric properties at high temperature making it ideal for temperature sensing at high temperature applications. Lithium niobate has been studied previously in the attempt to use its pyroelectric current as the sensing mechanism to measure temperatures up to 500 °C. Pyroelectric coefficient of lithium niobate is a function of temperature as reported in a previous study, therefore a dynamic technique is utilized to measure the pyroelectric coefficient of the lithium niobate used in this study. The pyroelectric coefficient was successfully measured up to 500 °C with coefficients ranging from -8.5 x 10 -5 C/m2 °C at room temperature to -23.70 x 10 -5 C/m2 °C at 500 °C. The lithium niobate sensor was then tested at higher temperatures: 220 °C, 280 °C, 410 °C and 500 °C with 4.31 %, 2.1 %, 0.4 % and 0.6 % deviation respectively when compared with thermocouple measurements. The second phase of this study focused on developing a wireless temperature sensor with lead zirconate titanate (PZT) as the pyroelectric material. This wireless temperature sensor consists of generating current by the PZT when exposed to a rate of temperature change with time, which was conducted to a built electromagnet to produce a magnetic field. The magnetic field was captured wirelessly with a milligaussmeter at a certain distance. Pyroelectric property of PZT (-40x10-5 C/m2 °C at 25 °C) is higher than that of the lithium niobate (-8.5x10-5 C/m2 °C at 25 °C), which was necessary to be able to generate the necessary pyroelectric current to make magnetic field detectable by the milligaussmeter. The electromagnet body was 3D printed with ABS material and surrounded with winding wire material. Before attempting a wireless temperature measurement, several attempts to measure the magnetic field at different distances away from the electromagnet were done. At the applied heating rates, the milligaussmeter was able to measure magnetic field up to 1.27 cm away from the electromagnet edge. A PZT sensor with a thickness of 0.1 cm was tested for use in the wireless temperature measurement configuration. For more accurate wireless temperature measurements, a similar pyroelectric coefficient measurement technique as used in phase one was done. The pyroelectric coefficient was found to increase from -40x10 -5 C/m2 °C to -71.84x10-5 C/m 2 °C from 25 °C to 122 °C, respectively. The PZT sensor was then tested for wireless temperature measurement at a distance of 1.27 cm at set temperatures of 100 °C, 150 °C, and 200 °C, and showed a maximum 10.47 % deviation when compared to thermocouple reading. In order to increase the distance that the wireless temperature sensor can read, a ferromagnetic material was placed inside the electromagnet. The sensor was tested for wireless temperature measurement at 1.27 cm, 2.54 cm and 3.81 cm with a maximum deviation of 13.4 %.

Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scarcella, Carmelo; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Villa, Federica

2013-12-15

We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 μm active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

Low power wireless sensor networks for infrastructure monitoring

NASA Astrophysics Data System (ADS)

Ghaed, Mohammad Hassan; Ghahramani, Mohammad Mahdi; Chen, Gregory; Fojtik, Matthew; Blaauw, David; Flynn, Michael P.; Sylvester, Dennis

2012-04-01

Sensors with long lifetimes are ideal for infrastructure monitoring. Miniaturized sensor systems are only capable of storing small amounts of energy. Prior work has increased sensor lifetime through the reduction of supply voltage , necessitating voltage conversion from storage elements such as batteries. Sensor lifetime can be further extended by harvesting from solar, vibrational, or thermal energy. Since harvested energy is sporadic, it must be detected and stored. Harvesting sources do not provide voltage levels suitable for secondary power sources, necessitating DC-DC upconversion. We demonstrate a 8.75mm3 sensor system with a near-threshold ARM microcontroller, custom 3.3fW/bit SRAM, two 1mm2 solar cells, a thin-film Li-ion battery, and integrated power management unit. The 7.7μW system enters a 550pW data-retentive sleep state between measurements and harvests solar energy to enable energy autonomy. Our receiver and transmitter architectures benefit from a design strategy that employs mixed signal and digital circuit schemes that perform well in advanced CMOS integrated circuit technologies. A prototype transmitter implemented in 0.13μm CMOS satisfies the requirements for Zigbee, but consumes far less power consumption than state-of-the-art commercial devices.

A monolithic 640 × 512 CMOS imager with high-NIR sensitivity

NASA Astrophysics Data System (ADS)

Lauxtermann, Stefan; Fisher, John; McDougal, Michael

2014-06-01

In this paper we present first results from a backside illuminated CMOS image sensor that we fabricated on high resistivity silicon. Compared to conventional CMOS imagers, a thicker photosensitive membrane can be depleted when using silicon with low background doping concentration while maintaining low dark current and good MTF performance. The benefits of such a fully depleted silicon sensor are high quantum efficiency over a wide spectral range and a fast photo detector response. Combining these characteristics with the circuit complexity and manufacturing maturity available from a modern, mixed signal CMOS technology leads to a new type of sensor, with an unprecedented performance spectrum in a monolithic device. Our fully depleted, backside illuminated CMOS sensor was designed to operate at integration times down to 100nsec and frame rates up to 1000Hz. Noise in Integrate While Read (IWR) snapshot shutter operation for these conditions was simulated to be below 10e- at room temperature. 2×2 binning with a 4× increase in sensitivity and a maximum frame rate of 4000 Hz is supported. For application in hyperspectral imaging systems the full well capacity in each row can individually be programmed between 10ke-, 60ke- and 500ke-. On test structures we measured a room temperature dark current of 360pA/cm2 at a reverse bias of 3.3V. A peak quantum efficiency of 80% was measured with a single layer AR coating on the backside. Test images captured with the 50μm thick VGA imager between 30Hz and 90Hz frame rate show a strong response at NIR wavelengths.

Cryogenic temperature dependence of the voltage transfer characteristics of CMOS inverters

NASA Astrophysics Data System (ADS)

Deen, M. J.

1988-08-01

The voltage transfer characteristics of CMOS inverters have been studied in detail as a function of temperature between 77 and 300 K and supply voltages between 2 and 20 V. The logic levels, maximum gain, unity gain points, noise margins and other parameters, such as ( VH - VL), all showed a marked improvement as the temperature was lowered. In particular, for one inverter with a supply of 5 V, the maximum gain increased from 57 to 105, ( VIH - VIL) decreased from 0.50 to 0.28 V and ( VH - VL) increased from 4.46 to 4.75 V on decreasing the temperature from 300 to 77 K. For all the inverters, these and other parameters showed a smooth monotonic improvement as the temperature was lowered. These and the other results obtained can be qualitatively explained as due to an increase in the absolute values in the threshold voltages of the PMOS and NMOS transistors and to an increase in the carrier mobility as the temperature was lowered.

A Brief Review of the Need for Robust Smart Wireless Sensor Systems for Future Propulsion Systems, Distributed Engine Controls, and Propulsion Health Management

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Behbahani, Alireza

2012-01-01

Smart Sensor Systems with wireless capability operational in high temperature, harsh environments are a significant component in enabling future propulsion systems to meet a range of increasingly demanding requirements. These propulsion systems must incorporate technology that will monitor engine component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This paper discusses the motivation towards the development of high temperature, smart wireless sensor systems that include sensors, electronics, wireless communication, and power. The challenges associated with the use of traditional wired sensor systems will be reviewed and potential advantages of Smart Sensor Systems will be discussed. A brief review of potential applications for wireless smart sensor networks and their potential impact on propulsion system operation, with emphasis on Distributed Engine Control and Propulsion Health Management, will be given. A specific example related to the development of high temperature Smart Sensor Systems based on silicon carbide electronics will be discussed. It is concluded that the development of a range of robust smart wireless sensor systems are a foundation for future development of intelligent propulsion systems with enhanced capabilities.

Self-Powered Wireless Smart Sensor Node Enabled by an Ultrastable, Highly Efficient, and Superhydrophobic-Surface-Based Triboelectric Nanogenerator.

PubMed

Zhao, Kun; Wang, Zhong Lin; Yang, Ya

2016-09-27

Wireless sensor networks will be responsible for a majority of the fast growth in intelligent systems in the next decade. However, most of the wireless smart sensor nodes require an external power source such as a Li-ion battery, where the labor cost and environmental waste issues of replacing batteries have largely limited the practical applications. Instead of using a Li-ion battery, we report an ultrastable, highly efficient, and superhydrophobic-surface-based triboelectric nanogenerator (TENG) to scavenge wind energy for sustainably powering a wireless smart temperature sensor node. There is no decrease in the output voltage and current of the TENG after continuous working for about 14 h at a wind speed of 12 m/s. Through a power management circuit, the TENG can deliver a constant output voltage of 3.3 V and a pulsed output current of about 100 mA to achieve highly efficient energy storage in a capacitor. A wireless smart temperature sensor node can be sustainably powered by the TENG for sending the real-time temperature data to an iPhone under a working distance of 26 m, demonstrating the feasibility of the self-powered wireless smart sensor networks.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

PubMed

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-11-04

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(V excit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min) -0.1 in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications †

PubMed Central

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-01-01

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries. PMID:27827904

Wireless and passive temperature indicator utilizing the large hysteresis of magnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Bergmair, Bernhard; Liu, Jian; Huber, Thomas; Gutfleisch, Oliver; Suess, Dieter

2012-07-01

An ultra-low cost, wireless magnetoelastic temperature indicator is presented. It comprises a magnetostrictive amorphous ribbon, a Ni-Mn-Sn-Co magnetic shape memory alloy with a highly tunable transformation temperature, and a bias magnet. It allows to remotely detect irreversible changes due to transgressions of upper or lower temperature thresholds. Therefore, the proposed temperature indicator is particularly suitable for monitoring the temperature-controlled supply chain of, e.g., deep frozen and chilled food or pharmaceuticals.

A highly linear baseband Gm—C filter for WLAN application

NASA Astrophysics Data System (ADS)

Lijun, Yang; Zheng, Gong; Yin, Shi; Zhiming, Chen

2011-09-01

A low voltage, highly linear transconductan—C (Gm—C) low-pass filter for wireless local area network (WLAN) transceiver application is proposed. This transmitter (Tx) filter adopts a 9.8 MHz 3rd-order Chebyshev low pass prototype and achieves 35 dB stop-band attenuation at 30 MHz frequency. By utilizing pseudo-differential linear-region MOS transconductors, the filter IIP3 is measured to be as high as 9.5 dBm. Fabricated in a 0.35 μm standard CMOS technology, the proposed filter chip occupies a 0.41 × 0.17 mm2 die area and consumes 3.36 mA from a 3.3-V power supply.

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

DOE PAGES

Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; ...

2015-06-04

We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiO x and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstratesmore » an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.« less

Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

PubMed

Wang, Zhenwei; Al-Jawhari, Hala A; Nayak, Pradipta K; Caraveo-Frescas, J A; Wei, Nini; Hedhili, M N; Alshareef, H N

2015-04-20

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

PubMed Central

Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

2015-01-01

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

Wireless energizing system for an automated implantable sensor.

PubMed

Swain, Biswaranjan; Nayak, Praveen P; Kar, Durga P; Bhuyan, Satyanarayan; Mishra, Laxmi P

2016-07-01

The wireless drive of an automated implantable electronic sensor has been explored for health monitoring applications. The proposed system comprises of an automated biomedical sensing system which is energized through resonant inductive coupling. The implantable sensor unit is able to monitor the body temperature parameter and sends back the corresponding telemetry data wirelessly to the data recoding unit. It has been observed that the wireless power delivery system is capable of energizing the automated biomedical implantable electronic sensor placed over a distance of 3 cm from the power transmitter with an energy transfer efficiency of 26% at the operating resonant frequency of 562 kHz. This proposed method ensures real-time monitoring of different human body temperatures around the clock. The monitored temperature data have been compared with a calibrated temperature measurement system to ascertain the accuracy of the proposed system. The investigated technique can also be useful for monitoring other body parameters such as blood pressure, bladder pressure, and physiological signals of the patient in vivo using various implantable sensors.

Simultaneous wireless assessment of intra-oral pH and temperature.

PubMed

Farella, M; Loke, C; Sander, S; Songini, A; Allen, M; Mei, L; Cannon, R D

2016-08-01

Intra-oral pH plays an important role in the pathogenesis of tooth erosion and decay, but there is limited information about its variation in real life settings. The aims of this research were to: 1) develop a wireless device, which can be used to continuously monitor intra-oral pH and temperature in real-time; 2) test and validate the device under controlled laboratory conditions; and 3) collect data in a natural environment in a sample of healthy volunteers. A wireless device for measuring pH and temperature simultaneously was developed, calibrated and validated against the gold standard glass electrode pH meter. A smart phone was used as data logger. The wireless device was embedded in an oral appliance and worn by eleven participants (mean age 31.1±6.9years) for 24h, while conducting standardised drinking tasks and regular daily activities. The wireless device could accurately measure pH and temperature both in vitro and in vivo. The recovery time following the swallow of a standard acidic drink varied markedly among individuals (mean=1.3±0.9min). The intra-oral pH and temperature recorded in the natural environment also showed a large inter- and intra-individual variability. The average intra-oral pH when asleep (6.7±0.5) was lower (p<0.001) than when awake (7.2±0.5). The average intra-oral temperature during sleep (35.6±0.5°C) was higher (p<0.001) than when awake (34.5±0.7°C). Intra-oral pH and temperature can be continuously and wirelessly assessed in real-life settings, and show individual-specific patterns with circadian variations. Intra-oral pH becomes slightly acidic during sleep while intra-oral temperature increases and fluctuates less. We propose a wireless device that is capable of measuring intra-oral pH over a 24-h period. We found marked inter-individual variation after acidic stimuli, and day to sleep time variation of both intra-oral temperature and pH. Our approach may provide new insight into the relationship between oral pH, tooth wear and decay. Copyright © 2016 Elsevier Ltd. All rights reserved.

American River Hydrologic Observatory

NASA Astrophysics Data System (ADS)

Glaser, S. D.; Bales, R. C.; Conklin, M. H.

2016-12-01

We have set up fourteen large wireless sensor networks to measure hydrologic parameters over physiographical representative regions of the snow-dominated portion of the river basin. This is perhaps the largest wireless sensor network in the world. Each network covers about a 1 km2 area and consists of about 45 elements. We measure snow depth, temperature humidity soil moisture and temperature, and solar radiation in real time at ten locations per site, as opposed to the traditional once-a-month snow course. As part of the multi-PI SSCZO, we have installed a 62-node wireless sensor network to measure snow depth, temperature humidity soil moisture and temperature, and solar radiation in real time. This network has been operating for approximately six years. We are now installing four large wireless sensor networks to measure snow depth, temperature humidity soil moisture and temperature, and solar radiation in East Branch of the North Fork of the Feather River, CA. The presentation will discuss the planning and operation of the networks as well as some unique results. It will also present information about the networking hardware designed for these installations, which has resulted in a start-up, Metronome Systems.

Design and Experimental Verification of a 0.19 V 53 μW 65 nm CMOS Integrated Supply-Sensing Sensor With a Supply-Insensitive Temperature Sensor and an Inductive-Coupling Transmitter for a Self-Powered Bio-sensing System Using a Biofuel Cell.

PubMed

Kobayashi, Atsuki; Ikeda, Kei; Ogawa, Yudai; Kai, Hiroyuki; Nishizawa, Matsuhiko; Nakazato, Kazuo; Niitsu, Kiichi

2017-12-01

In this paper, we present a self-powered bio-sensing system with the capability of proximity inductive-coupling communication for supply sensing and temperature monitoring. The proposed bio-sensing system includes a biofuel cell as a power source and a sensing frontend that is associated with the CMOS integrated supply-sensing sensor. The sensor consists of a digital-based gate leakage timer, a supply-insensitive time-domain temperature sensor, and a current-driven inductive-coupling transmitter and achieves low-voltage operation. The timer converts the output voltage from a biofuel cell to frequency. The temperature sensor provides a pulse width modulation (PWM) output that is not dependent on the supply voltage, and the associated inductive-coupling transmitter enables proximity communication. A test chip was fabricated in 65 nm CMOS technology and consumed 53 μW with a supply voltage of 190 mV. The low-voltage-friendly design satisfied the performance targets of each integrated sensor without any trimming. The chips allowed us to successfully demonstrate proximity communication with an asynchronous receiver, and the measurement results show the potential for self-powered operation using biofuel cells. The analysis and experimental verification of the system confirmed their robustness.

A wireless passive pressure microsensor fabricated in HTCC MEMS technology for harsh environments.

PubMed

Tan, Qiulin; Kang, Hao; Xiong, Jijun; Qin, Li; Zhang, Wendong; Li, Chen; Ding, Liqiong; Zhang, Xiansheng; Yang, Mingliang

2013-08-02

A wireless passive high-temperature pressure sensor without evacuation channel fabricated in high-temperature co-fired ceramics (HTCC) technology is proposed. The properties of the HTCC material ensure the sensor can be applied in harsh environments. The sensor without evacuation channel can be completely gastight. The wireless data is obtained with a reader antenna by mutual inductance coupling. Experimental systems are designed to obtain the frequency-pressure characteristic, frequency-temperature characteristic and coupling distance. Experimental results show that the sensor can be coupled with an antenna at 600 °C and max distance of 2.8 cm at room temperature. The senor sensitivity is about 860 Hz/bar and hysteresis error and repeatability error are quite low.

Wireless Sensor Applications in Extreme Aeronautical Environments

NASA Technical Reports Server (NTRS)

Wilson, William C.; Atkinson, Gary M.

2013-01-01

NASA aeronautical programs require rigorous ground and flight testing. Many of the testing environments can be extremely harsh. These environments include cryogenic temperatures and high temperatures (greater than 1500 C). Temperature, pressure, vibration, ionizing radiation, and chemical exposure may all be part of the harsh environment found in testing. This paper presents a survey of research opportunities for universities and industry to develop new wireless sensors that address anticipated structural health monitoring (SHM) and testing needs for aeronautical vehicles. Potential applications of passive wireless sensors for ground testing and high altitude aircraft operations are presented. Some of the challenges and issues of the technology are also presented.

Toward Realization of 2.4 GHz Balunless Narrowband Receiver Front-End for Short Range Wireless Applications.

PubMed

El-Desouki, Munir M; Qasim, Syed Manzoor; BenSaleh, Mohammed S; Deen, M Jamal

2015-05-07

The demand for radio frequency (RF) transceivers operating at 2.4 GHz band has attracted considerable research interest due to the advancement in short range wireless technologies. The performance of RF transceivers depends heavily on the transmitter and receiver front-ends. The receiver front-end is comprised of a low-noise amplifier (LNA) and a downconversion mixer. There are very few designs that focus on connecting the single-ended output LNA to a double-balanced mixer without the use of on-chip transformer, also known as a balun. The objective of designing such a receiver front-end is to achieve high integration and low power consumption. To meet these requirements, we present the design of fully-integrated 2.4 GHz receiver front-end, consisting of a narrow-band LNA and a double balanced mixer without using a balun. Here, the single-ended RF output signal of the LNA is translated into differential signal using an NMOS-PMOS (n-channel metal-oxide-semiconductor, p-channel metal-oxide-semiconductor) transistor differential pair instead of the conventional NMOS-NMOS transistor configuration, for the RF amplification stage of the double-balanced mixer. The proposed receiver circuit fabricated using TSMC 0.18 µm CMOS technology operates at 2.4 GHz and produces an output signal at 300 MHz. The fabricated receiver achieves a gain of 16.3 dB and consumes only 6.74 mW operating at 1.5 V, while utilizing 2.08 mm2 of chip area. Measurement results demonstrate the effectiveness and suitability of the proposed receiver for short-range wireless applications, such as in wireless sensor network (WSN).

An efficient micro control unit with a reconfigurable filter design for wireless body sensor networks (WBSNs).

PubMed

Chen, Chiung-An; Chen, Shih-Lun; Huang, Hong-Yi; Luo, Ching-Hsing

2012-11-22

In this paper, a low-cost, low-power and high performance micro control unit (MCU) core is proposed for wireless body sensor networks (WBSNs). It consists of an asynchronous interface, a register bank, a reconfigurable filter, a slop-feature forecast, a lossless data encoder, an error correct coding (ECC) encoder, a UART interface, a power management (PWM), and a multi-sensor controller. To improve the system performance and expansion abilities, the asynchronous interface is added for handling signal exchanges between different clock domains. To eliminate the noise of various bio-signals, the reconfigurable filter is created to provide the functions of average, binomial and sharpen filters. The slop-feature forecast and the lossless data encoder is proposed to reduce the data of various biomedical signals for transmission. Furthermore, the ECC encoder is added to improve the reliability for the wireless transmission and the UART interface is employed the proposed design to be compatible with wireless devices. For long-term healthcare monitoring application, a power management technique is developed for reducing the power consumption of the WBSN system. In addition, the proposed design can be operated with four different bio-sensors simultaneously. The proposed design was successfully tested with a FPGA verification board. The VLSI architecture of this work contains 7.67-K gate counts and consumes the power of 5.8 mW or 1.9 mW at 100 MHz or 133 MHz processing rate using a TSMC 0.18 μm or 0.13 μm CMOS process. Compared with previous techniques, this design achieves higher performance, more functions, more flexibility and higher compatibility than other micro controller designs.

A Self-Sustained Wireless Multi-Sensor Platform Integrated with Printable Organic Sensors for Indoor Environmental Monitoring

PubMed Central

Wu, Chun-Chang; Chuang, Wen-Yu; Wu, Ching-Da; Su, Yu-Cheng; Huang, Yung-Yang; Huang, Yang-Jing; Peng, Sheng-Yu; Yu, Shih-An; Lin, Chih-Ting; Lu, Shey-Shi

2017-01-01

A self-sustained multi-sensor platform for indoor environmental monitoring is proposed in this paper. To reduce the cost and power consumption of the sensing platform, in the developed platform, organic materials of PEDOT:PSS and PEDOT:PSS/EB-PANI are used as the sensing films for humidity and CO2 detection, respectively. Different from traditional gas sensors, these organic sensing films can operate at room temperature without heating processes or infrared transceivers so that the power consumption of the developed humidity and the CO2 sensors can be as low as 10 μW and 5 μW, respectively. To cooperate with these low-power sensors, a Complementary Metal-Oxide-Semiconductor (CMOS) system-on-chip (SoC) is designed to amplify and to read out multiple sensor signals with low power consumption. The developed SoC includes an analog-front-end interface circuit (AFE), an analog-to-digital convertor (ADC), a digital controller and a power management unit (PMU). Scheduled by the digital controller, the sensing circuits are power gated with a small duty-cycle to reduce the average power consumption to 3.2 μW. The designed PMU converts the power scavenged from a dye sensitized solar cell (DSSC) module into required supply voltages for SoC circuits operation under typical indoor illuminance conditions. To our knowledge, this is the first multiple environmental parameters (Temperature/CO2/Humidity) sensing platform that demonstrates a true self-powering functionality for long-term operations. PMID:28353680

A Self-Sustained Wireless Multi-Sensor Platform Integrated with Printable Organic Sensors for Indoor Environmental Monitoring.

PubMed

Wu, Chun-Chang; Chuang, Wen-Yu; Wu, Ching-Da; Su, Yu-Cheng; Huang, Yung-Yang; Huang, Yang-Jing; Peng, Sheng-Yu; Yu, Shih-An; Lin, Chih-Ting; Lu, Shey-Shi

2017-03-29

A self-sustained multi-sensor platform for indoor environmental monitoring is proposed in this paper. To reduce the cost and power consumption of the sensing platform, in the developed platform, organic materials of PEDOT:PSS and PEDOT:PSS/EB-PANI are used as the sensing films for humidity and CO₂ detection, respectively. Different from traditional gas sensors, these organic sensing films can operate at room temperature without heating processes or infrared transceivers so that the power consumption of the developed humidity and the CO₂ sensors can be as low as 10 μW and 5 μW, respectively. To cooperate with these low-power sensors, a Complementary Metal-Oxide-Semiconductor (CMOS) system-on-chip (SoC) is designed to amplify and to read out multiple sensor signals with low power consumption. The developed SoC includes an analog-front-end interface circuit (AFE), an analog-to-digital convertor (ADC), a digital controller and a power management unit (PMU). Scheduled by the digital controller, the sensing circuits are power gated with a small duty-cycle to reduce the average power consumption to 3.2 μW. The designed PMU converts the power scavenged from a dye sensitized solar cell (DSSC) module into required supply voltages for SoC circuits operation under typical indoor illuminance conditions. To our knowledge, this is the first multiple environmental parameters (Temperature/CO₂/Humidity) sensing platform that demonstrates a true self-powering functionality for long-term operations.

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

PubMed Central

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wang, Zhenwei; Hedhili, M. N.; Wang, Q. X.; Alshareef, H. N.

2014-01-01

We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350°C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications. PMID:24728223

Monolithic integration of GMR sensors for standard CMOS-IC current sensing

NASA Astrophysics Data System (ADS)

De Marcellis, A.; Reig, C.; Cubells-Beltrán, M.-D.; Madrenas, J.; Santos, J. D.; Cardoso, S.; Freitas, P. P.

2017-09-01

In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 μA.

A review on high-resolution CMOS delay lines: towards sub-picosecond jitter performance.

PubMed

Abdulrazzaq, Bilal I; Abdul Halin, Izhal; Kawahito, Shoji; Sidek, Roslina M; Shafie, Suhaidi; Yunus, Nurul Amziah Md

2016-01-01

A review on CMOS delay lines with a focus on the most frequently used techniques for high-resolution delay step is presented. The primary types, specifications, delay circuits, and operating principles are presented. The delay circuits reported in this paper are used for delaying digital inputs and clock signals. The most common analog and digitally-controlled delay elements topologies are presented, focusing on the main delay-tuning strategies. IC variables, namely, process, supply voltage, temperature, and noise sources that affect delay resolution through timing jitter are discussed. The design specifications of these delay elements are also discussed and compared for the common delay line circuits. As a result, the main findings of this paper are highlighting and discussing the followings: the most efficient high-resolution delay line techniques, the trade-off challenge found between CMOS delay lines designed using either analog or digitally-controlled delay elements, the trade-off challenge between delay resolution and delay range and the proposed solutions for this challenge, and how CMOS technology scaling can affect the performance of CMOS delay lines. Moreover, the current trends and efforts used in order to generate output delayed signal with low jitter in the sub-picosecond range are presented.

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy.more » Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.« less

Accurate Behavioral Simulator of All-Digital Time-Domain Smart Temperature Sensors by Using SIMULINK

PubMed Central

Chen, Chun-Chi; Chen, Chao-Lieh; Lin, You-Ting

2016-01-01

This study proposes a new behavioral simulator that uses SIMULINK for all-digital CMOS time-domain smart temperature sensors (TDSTSs) for performing rapid and accurate simulations. Inverter-based TDSTSs offer the benefits of low cost and simple structure for temperature-to-digital conversion and have been developed. Typically, electronic design automation tools, such as HSPICE, are used to simulate TDSTSs for performance evaluations. However, such tools require extremely long simulation time and complex procedures to analyze the results and generate figures. In this paper, we organize simple but accurate equations into a temperature-dependent model (TDM) by which the TDSTSs evaluate temperature behavior. Furthermore, temperature-sensing models of a single CMOS NOT gate were devised using HSPICE simulations. Using the TDM and these temperature-sensing models, a novel simulator in SIMULINK environment was developed to substantially accelerate the simulation and simplify the evaluation procedures. Experiments demonstrated that the simulation results of the proposed simulator have favorable agreement with those obtained from HSPICE simulations, showing that the proposed simulator functions successfully. This is the first behavioral simulator addressing the rapid simulation of TDSTSs. PMID:27509507

Interferometry-based free space communication and information processing

NASA Astrophysics Data System (ADS)

Arain, Muzammil Arshad

This dissertation studies, analyzes, and experimentally demonstrates the innovative use of interference phenomenon in the field of opto-electronic information processing and optical communications. A number of optical systems using interferometric techniques both in the optical and the electronic domains has been demonstrated in the filed of signal transmission and processing, optical metrology, defense, and physical sensors. Specifically it has been shown that the interference of waves in the form of holography can be exploited to realize a novel optical scanner called Code Multiplexed Optical Scanner (C-MOS). The C-MOS features large aperture, wide scan angles, 3-D beam control, no moving parts, and high beam scanning resolution. A C-MOS based free space optical transceiver for bi-directional communication has also been experimentally demonstrated. For high speed, large bandwidth, and high frequency operation, an optically implemented reconfigurable RF transversal filter design is presented that implements wide range of filtering algorithms. A number of techniques using heterodyne interferometry via acousto-optic device for optical path length measurements have been described. Finally, a whole new class of interferometric sensors for optical metrology and sensing applications is presented. A non-traditional interferometric output signal processing scheme has been developed. Applications include, for example, temperature sensors for harsh environments for a wide temperature range from room temperature to 1000°C.

Role of the wireless thermologger system in the management of the autoclave unequipped with sensor ports.

PubMed

Uetera, Yushi; Shigematsu, Hiroshi; Baba, Zenzou; Kumada, Naohito; Kawamura, Kunio

2003-01-01

Recently, the wireless thermologger system was developed. It consists of a wireless logger and the attached computer system. The wireless logger has a wireless structure and can be placed anywhere in the sterilizer chamber for thermometry. In the present study, thermal evaluations were performed twice using the wireless thermologger system in the sterilizer chamber of the prevacuum autoclave unequipped with sensor ports when it failed to pass the Bowie-Dick test and underwent mechanical repairs. Thermometry was performed when the Bowie-Dick test cycle was operated. The heat up time was measured in the range of 120.0-134.0 degrees C. The F0 value was calculated with the reference temperature at 121.0 degrees C and Z value at 10 degrees C when the sterilization temperature was over 120.0 degrees C. The first thermal evaluation was performed after three air-leaking points were repaired along with the replacement of the vacuum pump and the thermosensor. It revealed that the heat-up time was 4 min and 42 s and the F0 value was 137.5. After the temperature control systems were adjusted using the process calibrator in the prevacuum autoclave, the second thermal evaluation revealed that the heat up time was 2 mins 1 s and the F0 value was 102.7. The present study suggests that the wireless thermologger system is useful in the management of the autoclave unequipped with sensor ports when it undergoes mechanical repairs.

Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solder

NASA Astrophysics Data System (ADS)

Sparks, D.; Queen, G.; Weston, R.; Woodward, G.; Putty, M.; Jordan, L.; Zarabadi, S.; Jayakar, K.

2001-11-01

The fabrication and reliability of a solder wafer-to-wafer bonding process is discussed. Using a solder reflow process allows vacuum packaging to be accomplished with unplanarized complementary metal-oxide semiconductor (CMOS) surface topography. This capability enables standard CMOS processes, and integrated microelectromechanical systems devices to be packaged at the chip-level. Alloy variations give this process the ability to bond at lower temperatures than most alternatives. Factors affecting hermeticity, shorts, Q values, shifting cavity pressure, wafer saw cleanliness and corrosion resistance will be covered.

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

NASA Technical Reports Server (NTRS)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Miniaturized camera system for an endoscopic capsule for examination of the colonic mucosa

NASA Astrophysics Data System (ADS)

Wippermann, Frank; Müller, Martin; Wäny, Martin; Voltz, Stephan

2014-09-01

Todaýs standard procedure for the examination of the colon uses a digital endoscope located at the tip of a tube encasing wires for camera read out, fibers for illumination, and mechanical structures for steering and navigation. On the other hand, there are swallowable capsules incorporating a miniaturized camera which are more cost effective, disposable, and less unpleasant for the patient during examination but cannot be navigated along the path through the colon. We report on the development of a miniaturized endoscopic camera as part of a completely wireless capsule which can be safely and accurately navigated and controlled from the outside using an electromagnet. The endoscope is based on a global shutter CMOS-imager with 640x640 pixels and a pixel size of 3.6μm featuring through silicon vias. Hence, the required electronic connectivity is done at its back side using a ball grid array enabling smallest lateral dimensions. The layout of the f/5-objective with 100° diagonal field of view aims for low production cost and employs polymeric lenses produced by injection molding. Due to the need of at least one-time autoclaving, high temperature resistant polymers were selected. Optical and mechanical design considerations are given along with experimental data obtained from realized demonstrators.

Vision communications based on LED array and imaging sensor

NASA Astrophysics Data System (ADS)

Yoo, Jong-Ho; Jung, Sung-Yoon

2012-11-01

In this paper, we propose a brand new communication concept, called as "vision communication" based on LED array and image sensor. This system consists of LED array as a transmitter and digital device which include image sensor such as CCD and CMOS as receiver. In order to transmit data, the proposed communication scheme simultaneously uses the digital image processing and optical wireless communication scheme. Therefore, the cognitive communication scheme is possible with the help of recognition techniques used in vision system. By increasing data rate, our scheme can use LED array consisting of several multi-spectral LEDs. Because arranged each LED can emit multi-spectral optical signal such as visible, infrared and ultraviolet light, the increase of data rate is possible similar to WDM and MIMO skills used in traditional optical and wireless communications. In addition, this multi-spectral capability also makes it possible to avoid the optical noises in communication environment. In our vision communication scheme, the data packet is composed of Sync. data and information data. Sync. data is used to detect the transmitter area and calibrate the distorted image snapshots obtained by image sensor. By making the optical rate of LED array be same with the frame rate (frames per second) of image sensor, we can decode the information data included in each image snapshot based on image processing and optical wireless communication techniques. Through experiment based on practical test bed system, we confirm the feasibility of the proposed vision communications based on LED array and image sensor.

A Wireless FSCV Monitoring IC With Analog Background Subtraction and UWB Telemetry.

PubMed

Dorta-Quiñones, Carlos I; Wang, Xiao Y; Dokania, Rajeev K; Gailey, Alycia; Lindau, Manfred; Apsel, Alyssa B

2016-04-01

A 30-μW wireless fast-scan cyclic voltammetry monitoring integrated circuit for ultra-wideband (UWB) transmission of dopamine release events in freely-behaving small animals is presented. On-chip integration of analog background subtraction and UWB telemetry yields a 32-fold increase in resolution versus standard Nyquist-rate conversion alone, near a four-fold decrease in the volume of uplink data versus single-bit, third-order, delta-sigma modulation, and more than a 20-fold reduction in transmit power versus narrowband transmission for low data rates. The 1.5- mm(2) chip, which was fabricated in 65-nm CMOS technology, consists of a low-noise potentiostat frontend, a two-step analog-to-digital converter (ADC), and an impulse-radio UWB transmitter (TX). The duty-cycled frontend and ADC/UWB-TX blocks draw 4 μA and 15 μA from 3-V and 1.2-V supplies, respectively. The chip achieves an input-referred current noise of 92 pA(rms) and an input current range of ±430 nA at a conversion rate of 10 kHz. The packaged device operates from a 3-V coin-cell battery, measures 4.7 × 1.9 cm(2), weighs 4.3 g (including the battery and antenna), and can be carried by small animals. The system was validated by wirelessly recording flow-injection of dopamine with concentrations in the range of 250 nM to 1 μM with a carbon-fiber microelectrode (CFM) using 300-V/s FSCV.

A Wireless FSCV Monitoring IC with Analog Background Subtraction and UWB Telemetry

PubMed Central

Dorta-Quiñones, Carlos I.; Wang, Xiao Y.; Dokania, Rajeev K.; Gailey, Alycia; Lindau, Manfred; Apsel, Alyssa B.

2015-01-01

A 30-μW wireless fast-scan cyclic voltammetry monitoring integrated circuit for ultra-wideband (UWB) transmission of dopamine release events in freely-behaving small animals is presented. On-chip integration of analog background subtraction and UWB telemetry yields a 32-fold increase in resolution versus standard Nyquist-rate conversion alone, near a four-fold decrease in the volume of uplink data versus single-bit, third-order, delta-sigma modulation, and more than a 20-fold reduction in transmit power versus narrowband transmission for low data rates. The 1.5-mm2 chip, which was fabricated in 65-nm CMOS technology, consists of a low-noise potentiostat frontend, a two-step analog-to-digital converter (ADC), and an impulse-radio UWB transmitter (TX). The duty-cycled frontend and ADC/UWB-TX blocks draw 4 μA and 15 μA from 3-V and 1.2-V supplies, respectively. The chip achieves an input-referred current noise of 92 pArms and an input current range of ±430 nA at a conversion rate of 10 kHz. The packaged device operates from a 3-V coin-cell battery, measures 4.7 × 1.9 cm2, weighs 4.3 g (including the battery and antenna), and can be carried by small animals. The system was validated by wirelessly recording flow-injection of dopamine with concentrations in the range of 250 nM to 1 μM with a carbon-fiber microelectrode (CFM) using 300-V/s FSCV. PMID:26057983

Wireless energizing system for an automated implantable sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swain, Biswaranjan; Nayak, Praveen P.; Kar, Durga P.

The wireless drive of an automated implantable electronic sensor has been explored for health monitoring applications. The proposed system comprises of an automated biomedical sensing system which is energized through resonant inductive coupling. The implantable sensor unit is able to monitor the body temperature parameter and sends back the corresponding telemetry data wirelessly to the data recoding unit. It has been observed that the wireless power delivery system is capable of energizing the automated biomedical implantable electronic sensor placed over a distance of 3 cm from the power transmitter with an energy transfer efficiency of 26% at the operating resonantmore » frequency of 562 kHz. This proposed method ensures real-time monitoring of different human body temperatures around the clock. The monitored temperature data have been compared with a calibrated temperature measurement system to ascertain the accuracy of the proposed system. The investigated technique can also be useful for monitoring other body parameters such as blood pressure, bladder pressure, and physiological signals of the patient in vivo using various implantable sensors.« less

An RFID-based on-lens sensor system for long-term IOP monitoring.

PubMed

Hsu, Shun-Hsi; Chiou, Jin-Chern; Liao, Yu-Te; Yang, Tzu-Sen; Kuei, Cheng-Kai; Wu, Tsung-Wei; Huang, Yu-Chieh

2015-01-01

In this paper, an RFID-based on-lens sensor system is proposed for noninvasive long-term intraocular pressure monitoring. The proposed sensor IC, fabricated in a 0.18um CMOS process, consists of capacitive sensor readout circuitry, RFID communication circuits, and digital processing units. The sensor IC is integrated with electroplating capacitive sensors and a receiving antenna on the contact lens. The sensor IC can be wirelessly powered, communicate with RFID compatible equipment, and perform IOP measurement using on-lens capacitive sensor continuously from a 2cm distance while the incident power from an RFID reader is 20 dBm. The proposed system is compatible to Gen2 RFID protocol, extending the flexibility and reducing the self-developed firmware efforts.

A physically transient form of silicon electronics.

PubMed

Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Song, Young Min; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L; Zakin, Mitchell R; Slepian, Marvin J; Huang, Yonggang; Omenetto, Fiorenzo G; Rogers, John A

2012-09-28

A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.

High Speed Surface Thermocouples Interface to Wireless Transmitters

DTIC Science & Technology

2017-03-15

Government and/or Private Sector Use Being able to measure high-speed surface temperatures in hostile environments where wireless transmission of the data...09/16/2016 See Item 16 Draft Reg Repro 16. REMARKS Eric Gingrich, COR I Item 0: High Speed Surface Thermocouples Interface to Wireless ...Speed Surface Thermocouples Interface to Wireless Transmitters W56HZV-16-C-0149 Sb. GRANT NUMBER Sc. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Sd. PROJECT

A dual slope charge sampling analog front-end for a wireless neural recording system.

PubMed

Lee, Seung Bae; Lee, Byunghun; Gosselin, Benoit; Ghovanloo, Maysam

2014-01-01

This paper presents a novel dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which amplifies neural signals by taking advantage of the charge sampling concept for analog signal conditioning, such as amplification and filtering. The presented DSCS-AFE achieves amplification, filtering, and sampling in a simultaneous fashion, while consuming very small amount of power. The output of the DSCS-AFE produces a pulse width modulated (PWM) signal that is proportional to the input voltage amplitude. A circular shift register (CSR) utilizes time division multiplexing (TDM) of the PWM pulses to create a pseudo-digital TDM-PWM signal that can feed a wireless transmitter. The 8-channel system-on-a-chip was fabricated in a 0.35-μm CMOS process, occupying 2.4 × 2.1 mm(2) and consuming 255 μW from a 1.8V supply. Measured input-referred noise for the entire system, including the FPGA in order to recover PWM signal is 6.50 μV(rms) in the 288 Hz~10 kHz range. For each channel, sampling rate is 31.25 kHz, and power consumption is 31.8 μW.

A triple-mode hexa-standard reconfigurable TI cross-coupled ΣΔ modulator

NASA Astrophysics Data System (ADS)

Prakash A. V, Jos; Jose, Babita R.; Mathew, Jimson; Jose, Bijoy A.

2017-07-01

Hardware reconfigurability is an attractive solution for modern multi-standard wireless systems. This paper analyses the performance and implementation of an efficient triple-mode hexa-standard reconfigurable sigma-delta (∑Δ) modulator designed for six different wireless communication standards. Enhanced noise-shaping characteristics and increased digitisation rate, obtained by time-interleaved cross-coupling of ∑Δ paths, have been utilised for the modulator design. Power/hardware efficiency and the capability to acclimate the requirements of wide hexa-standard specifications are achieved by introducing an advanced noise-shaping structure, the dual-extended architecture. Simulation results of the proposed architecture using Hspice shows that the proposed modulator obtains a peak signal-to-noise ratio of 83.4/80.2/67.8/61.5/60.8/51.03 dB for hexa-standards, i.e. GSM/Bluetooth/GPS/WCDMA/WLAN/WiMAX standards with significantly less hardware and low operating frequency. The proposed architecture is implemented in 45 nm CMOS process using a 1 V supply and 0.7 V input range with a power consumption of 1.93 mW. Both architectural- and transistor-level simulation results prove the effectiveness and feasibility of this architecture to accomplish multi-standard cellular communication characteristics.

Micropower circuits for bidirectional wireless telemetry in neural recording applications.

PubMed

Neihart, Nathan M; Harrison, Reid R

2005-11-01

State-of-the art neural recording systems require electronics allowing for transcutaneous, bidirectional data transfer. As these circuits will be implanted near the brain, they must be small and low power. We have developed micropower integrated circuits for recovering clock and data signals over a transcutaneous power link. The data recovery circuit produces a digital data signal from an ac power waveform that has been amplitude modulated. We have also developed an FM transmitter with the lowest power dissipation reported for biosignal telemetry. The FM transmitter consists of a low-noise biopotential amplifier and a voltage controlled oscillator used to transmit amplified neural signals at a frequency near 433 MHz. All circuits were fabricated in a standard 0.5-microm CMOS VLSI process. The resulting chip is powered through a wireless inductive link. The power consumption of the clock and data recovery circuits is measured to be 129 microW; the power consumption of the transmitter is measured to be 465 microW when using an external surface mount inductor. Using a parasitic antenna less than 2 mm long, a received power level was measured to be -59.73 dBm at a distance of one meter.

A Dual Slope Charge Sampling Analog Front-End for a Wireless Neural Recording System

PubMed Central

Lee, Seung Bae; Lee, Byunghun; Gosselin, Benoit

2015-01-01

This paper presents a novel dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which amplifies neural signals by taking advantage of the charge sampling concept for analog signal conditioning, such as amplification and filtering. The presented DSCS-AFE achieves amplification, filtering, and sampling in a simultaneous fashion, while consuming very small amount of power. The output of the DSCS-AFE produces a pulse width modulated (PWM) signal that is proportional to the input voltage amplitude. A circular shift register (CSR) utilizes time division multiplexing (TDM) of the PWM pulses to create a pseudo-digital TDM-PWM signal that can feed a wireless transmitter. The 8-channel system-on-a-chip was fabricated in a 0.35-µm CMOS process, occupying 2.4 × 2.1 mm2 and consuming 255 µW from a 1.8V supply. Measured input-referred noise for the entire system, including the FPGA in order to recover PWM signal is 6.50 µVrms in the 288 Hz~10 kHz range. For each channel, sampling rate is 31.25 kHz, and power consumption is 31.8 µW. PMID:25570655

Accelerated life testing effects on CMOS microcircuit characteristics

NASA Technical Reports Server (NTRS)

1980-01-01

The 250 C, 200C and 125C accelerated tests are described. The wear-out distributions from the 250 and 200 C tests were used to estimate the activation energy between the two test temperatures. The duration of the 125 C test was not sufficient to bring the test devices into the wear-out region. It was estimated that, for the most complex of the three devices types, the activation energy between 200 C and 125 C should be at least as high as that between 250 C and 200 C. The practicality of the use of high temperature for the accelerated life tests from the point of view of durability of equipment is assessed. Guidlines for the development of accelerated life-test conditions are proposed. The use of the silicon nitride overcoat to improve the high temperature accelerated life-test characteristics of CMOS microcircuits is described.

Developing wireless sensor networks for monitoring crop canopy temperature using a moving sprinkler system as a platform

USDA-ARS?s Scientific Manuscript database

The objectives of this study were to characterize wireless sensor nodes that we developed in terms of power consumption and functionality, and compare the performance of mesh and non-mesh wireless sensor networks (WSNs) comprised mainly of infrared thermometer thermocouples located on a center pivot...

A 1.1nW Energy Harvesting System with 544pW Quiescent Power for Next Generation Implants

PubMed Central

Mercier, Patrick P.; Lysaght, Andrew C.; Stankovic, Konstantina M.; Chandrakasan, Anantha P.

2015-01-01

This paper presents a nW power management unit (PMU) for an autonomous wireless sensor that sustains itself by harvesting energy from the endocochlear potential (EP), the 70–100 mV electrochemical bio-potential inside the mammalian ear. Due to the anatomical constraints inside the inner ear, the total extractable power from the EP is limited to 1.1–6.25 nW. A nW boost converter is used to increase the input voltage (30–55 mV) to a higher voltage (0.8 to 1.1 V) usable by CMOS circuits in the sensor. A pW Charge Pump circuit is used to minimize the leakage in the boost converter. Further, ultra-low-power control circuits consisting of digital implementations of input impedance adjustment circuits and Zero Current Switching circuits along with Timer and Reference circuits keep the quiescent power of the PMU down to 544 pW. The designed boost converter achieves a peak power conversion efficiency of 56%. The PMU can sustain itself and a duty-cyled ultra-low power load while extracting power from the EP of a live guinea pig. The PMU circuits have been implemented on a 0.18µm CMOS process. PMID:25983340

A 1.1nW Energy Harvesting System with 544pW Quiescent Power for Next Generation Implants.

PubMed

Bandyopadhyay, Saurav; Mercier, Patrick P; Lysaght, Andrew C; Stankovic, Konstantina M; Chandrakasan, Anantha P

2014-12-01

This paper presents a nW power management unit (PMU) for an autonomous wireless sensor that sustains itself by harvesting energy from the endocochlear potential (EP), the 70-100 mV electrochemical bio-potential inside the mammalian ear. Due to the anatomical constraints inside the inner ear, the total extractable power from the EP is limited to 1.1-6.25 nW. A nW boost converter is used to increase the input voltage (30-55 mV) to a higher voltage (0.8 to 1.1 V) usable by CMOS circuits in the sensor. A pW Charge Pump circuit is used to minimize the leakage in the boost converter. Further, ultra-low-power control circuits consisting of digital implementations of input impedance adjustment circuits and Zero Current Switching circuits along with Timer and Reference circuits keep the quiescent power of the PMU down to 544 pW. The designed boost converter achieves a peak power conversion efficiency of 56%. The PMU can sustain itself and a duty-cyled ultra-low power load while extracting power from the EP of a live guinea pig. The PMU circuits have been implemented on a 0.18µm CMOS process.

A 65nm CMOS low-power MedRadio-band integer-N cascaded phase-locked loop for implantable medical systems.

PubMed

Wang, Yi-Xiao; Chen, Wei-Ming; Wu, Chung-Yu

2014-01-01

This paper presents a low-power MedRadio-band integer-N phase-locked Loop (PLL) system which is composed of two charge-pump PLLs cascade connected. The PLL provides the operation clock and local carrier signals for an implantable medical electronic system. In addition, to avoid the off-chip crystal oscillator, the 13.56 MHz Industrial, Scientific and Medical (ISM) band signal from the wireless power transmission system is adopted as the input reference signal for the PLL. Ring-based voltage controlled oscillators (VCOs) with current control units are adopted to reduce chip area and power dissipation. The proposed cascaded PLL system is designed and implemented in TSMC 65-nm CMOS technology. The measured jitter for 216.96 MHz signal is 12.23 ps and the phase noise is -65.9 dBc/Hz at 100 kHz frequency offset under 402.926 MHz carrier frequency. The measured power dissipations are 66 μW in the first PLL and 195 μW in the whole system under 1-V supply voltage. The chip area is 0.1088 mm(2) and no off-chip component is required which is suitable for the integration of the implantable medical electronic system.

A robust low quiescent current power receiver for inductive power transmission in bio implants

NASA Astrophysics Data System (ADS)

Helalian, Hamid; Pasandi, Ghasem; Jafarabadi Ashtiani, Shahin

2017-05-01

In this paper, a robust low quiescent current complementary metal-oxide semiconductor (CMOS) power receiver for wireless power transmission is presented. This power receiver consists of three main parts including rectifier, switch capacitor DC-DC converter and low-dropout regulator (LDO) without output capacitor. The switch capacitor DC-DC converter has variable conversion ratios and synchronous controller that lets the DC-DC converter to switch among five different conversion ratios to prevent output voltage drop and LDO regulator efficiency reduction. For all ranges of output current (0-10 mA), the voltage regulator is compensated and is stable. Voltage regulator stabilisation does not need the off-chip capacitor. In addition, a novel adaptive biasing frequency compensation method for low dropout voltage regulator is proposed in this paper. This method provides essential minimum current for compensation and reduces the quiescent current more effectively. The power receiver was designed in a 180-nm industrial CMOS technology, and the voltage range of the input is from 0.8 to 2 V, while the voltage range of the output is from 1.2 to 1.75 V, with a maximum load current of 10 mA, the unregulated efficiency of 79.2%, and the regulated efficiency of 64.4%.

Low Temperature Testing of a Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital (A/D) Converter

NASA Technical Reports Server (NTRS)

Gerber, Scott S.; Hammond, Ahmad; Elbuluk, Malik E.; Patterson, Richard L.; Overton, Eric; Ghaffarian, Reza; Ramesham, Rajeshuni; Agarwal, Shri G.

2001-01-01

Power processing electronic systems, data acquiring probes, and signal conditioning circuits are required to operate reliably under harsh environments in many of NASA:s missions. The environment of the space mission as well as the operational requirements of some of the electronic systems, such as infrared-based satellite or telescopic observation stations where cryogenics are involved, dictate the utilization of electronics that can operate efficiently and reliably at low temperatures. In this work, radiation-hard CMOS 8-bit flash A/D converters were characterized in terms of voltage conversion and offset in the temperature range of +25 to -190 C. Static and dynamic supply currents, ladder resistance, and gain and offset errors were also obtained in the temperature range of +125 to -190 C. The effect of thermal cycling on these properties for a total of ten cycles between +80 and - 150 C was also determined. The experimental procedure along with the data obtained are reported and discussed in this paper.

Development of an autonomous, wireless pH and temperature sensing system for monitoring pig meat quality.

PubMed

Frisby, June; Raftery, Declan; Kerry, Joe P; Diamond, Dermot

2005-06-01

This paper focuses on the development of a unique wireless pH and temperature monitoring system to assess pig meat quality. Pale, soft and exudative (PSE) pig meat continues to be a major problem in the pig meat industry today. The PSE condition in pork is related to a number of factors including genetics, pre-slaughter stress and insufficient chilling of pig carcasses, which cause a rapid rate of glycolysis post-mortem (<1h). As a result the pH drops to low levels while the muscle temperature is still high. A wireless dual channel system that monitors pH and temperature simultaneously has been developed to provide pH and temperature data of the carcass during the first 24h after slaughter. We have demonstrated that this approach can distinguish in real time, pH and temperature profiles that are 'non-normal', and identify carcasses that are PSE positive quickly and easily.

Pick-and-place process for sensitivity improvement of the capacitive type CMOS MEMS 2-axis tilt sensor

NASA Astrophysics Data System (ADS)

Chang, Chun-I.; Tsai, Ming-Han; Liu, Yu-Chia; Sun, Chih-Ming; Fang, Weileun

2013-09-01

This study exploits the foundry available complimentary metal-oxide-semiconductor (CMOS) process and the packaging house available pick-and-place technology to implement a capacitive type micromachined 2-axis tilt sensor. The suspended micro mechanical structures such as the spring, stage and sensing electrodes are fabricated using the CMOS microelectromechanical systems (MEMS) processes. A bulk block is assembled onto the suspended stage by pick-and-place technology to increase the proof-mass of the tilt sensor. The low temperature UV-glue dispensing and curing processes are employed to bond the block onto the stage. Thus, the sensitivity of the CMOS MEMS capacitive type 2-axis tilt sensor is significantly improved. In application, this study successfully demonstrates the bonding of a bulk solder ball of 100 µm in diameter with a 2-axis tilt sensor fabricated using the standard TSMC 0.35 µm 2P4M CMOS process. Measurements show the sensitivities of the 2-axis tilt sensor are increased for 2.06-fold (x-axis) and 1.78-fold (y-axis) after adding the solder ball. Note that the sensitivity can be further improved by reducing the parasitic capacitance and the mismatch of sensing electrodes caused by the solder ball.

A study of charged particles/radiation damage to VLSI device materials

NASA Technical Reports Server (NTRS)

Okyere, John G.

1987-01-01

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Wireless Capacitive Pressure Sensor With Directional RF Chip Antenna for High Temperature Environments

NASA Technical Reports Server (NTRS)

Scardelletti, M. C.; Jordan, J. L.; Ponchak, G. E.; Zorman, C. A.

2015-01-01

This paper presents the design, fabrication and characterization of a wireless capacitive pressure sensor with directional RF chip antenna that is envisioned for the health monitoring of aircraft engines operating in harsh environments. The sensing system is characterized from room temperature (25 C) to 300 C for a pressure range from 0 to 100 psi. The wireless pressure system consists of a Clapp-type oscillator design with a capacitive MEMS pressure sensor located in the LC-tank circuit of the oscillator. Therefore, as the pressure of the aircraft engine changes, so does the output resonant frequency of the sensing system. A chip antenna is integrated to transmit the system output to a receive antenna 10 m away.The design frequency of the wireless pressure sensor is 127 MHz and a 2 increase in resonant frequency over the temperature range of 25 to 300 C from 0 to 100 psi is observed. The phase noise is less than minus 30 dBcHz at the 1 kHz offset and decreases to less than minus 80 dBcHz at 10 kHz over the entire temperature range. The RF radiation patterns for two cuts of the wireless system have been measured and show that the system is highly directional and the MEMS pressure sensor is extremely linear from 0 to 100 psi.

CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

NASA Astrophysics Data System (ADS)

Huynh, Duc H.; Nguyen, Phuong D.; Nguyen, Thanh C.; Skafidas, Stan; Evans, Robin

2015-12-01

Frequency reference and timing control devices are ubiquitous in electronic applications. There is at least one resonator required for each of this device. Currently electromechanical resonators such as crystal resonator, ceramic resonator are the ultimate choices. This tendency will probably keep going for many more years. However, current market demands for small size, low power consumption, cheap and reliable products, has divulged many limitations of this type of resonators. They cannot be integrated into standard CMOS (Complement metaloxide- semiconductor) IC (Integrated Circuit) due to material and fabrication process incompatibility. Currently, these devices are off-chip and they require external circuitries to interface with the ICs. This configuration significantly increases the overall size and cost of the entire electronic system. In addition, extra external connection, especially at high frequency, will potentially create negative impacts on the performance of the entire system due to signal degradation and parasitic effects. Furthermore, due to off-chip packaging nature, these devices are quite expensive, particularly for high frequency and high quality factor devices. To address these issues, researchers have been intensively studying on an alternative for type of resonator by utilizing the new emerging MEMS (Micro-electro-mechanical systems) technology. Recent progress in this field has demonstrated a MEMS resonator with resonant frequency of 2.97 GHz and quality factor (measured in vacuum) of 42900. Despite this great achievement, this prototype is still far from being fully integrated into CMOS system due to incompatibility in fabrication process and its high series motional impedance. On the other hand, fully integrated MEMS resonator had been demonstrated but at lower frequency and quality factor. We propose a design and fabrication process for a low cost, high frequency and a high quality MEMS resonator, which can be integrated into a standard CMOS IC. This device is expected to operate in hundreds of Mhz frequency range; quality factor surpasses 10000 and series motional impedance low enough that could be matching into conventional system without enormous effort. This MEMS resonator can be used in the design of many blocks in wireless and RF (Radio Frequency) systems such as low phase noise oscillator, band pass filter, power amplifier and in many sensing application.

Polycrystalline Terfenol-D thin films grown at CMOS compatible temperature

NASA Astrophysics Data System (ADS)

Panduranga, Mohanchandra K.; Lee, Taehwan; Chavez, Andres; Prikhodko, Sergey V.; Carman, Gregory P.

2018-05-01

Terfenol-D thin films have the largest magnetoelastic coefficient at room temperature of any material system and thus are ideal for voltage induced strain multiferroics. However, Terfenol-D requires 500 0C processing temperature which prohibits its use in CMOS devices where processing temperatures must be below 450 0C. In this paper, we describe a deposition process that produces quality Terfenol-D film with processing temperature below 450 0C. These films have extremely smooth surfaces (Ra˜1nm) with excellent magnetoelastic properties (λs=880 microstrain) similar to its bulk polycrystalline counterpart. The films are produced by DC magnetron sputtering and deposited on heated substrates at 250 0C and post annealed at either 250 0C, 400 0C or 450 0C. Among these films only the film annealed at 450 0C produces crystalline Terfenol-D with a face centered cubic crystal structure and saturation magnetization of ˜700 emu/cc. MOKE Magnetic hysteresis loops measured with four point bending fixture show compressive strain dramatically alter the coercive field from 2300 Oe to 1600 Oe.

Single photon detection using Geiger mode CMOS avalanche photodiodes

NASA Astrophysics Data System (ADS)

Lawrence, William G.; Stapels, Christopher; Augustine, Frank L.; Christian, James F.

2005-10-01

Geiger mode Avalanche Photodiodes fabricated using complementary metal-oxide-semiconductor (CMOS) fabrication technology combine high sensitivity detectors with pixel-level auxiliary circuitry. Radiation Monitoring Devices has successfully implemented CMOS manufacturing techniques to develop prototype detectors with active diameters ranging from 5 to 60 microns and measured detection efficiencies of up to 60%. CMOS active quenching circuits are included in the pixel layout. The actively quenched pixels have a quenching time less than 30 ns and a maximum count rate greater than 10 MHz. The actively quenched Geiger mode avalanche photodiode (GPD) has linear response at room temperature over six orders of magnitude. When operating in Geiger mode, these GPDs act as single photon-counting detectors that produce a digital output pulse for each photon with no associated read noise. Thermoelectrically cooled detectors have less than 1 Hz dark counts. The detection efficiency, dark count rate, and after-pulsing of two different pixel designs are measured and demonstrate the differences in the device operation. Additional applications for these devices include nuclear imaging and replacement of photomultiplier tubes in dosimeters.

An ultra-compact and low-power oven-controlled crystal oscillator design for precision timing applications.

PubMed

Lim, Jaehyun; Kim, Hyunsoo; Jackson, Thomas; Choi, Kyusun; Kenny, David

2010-09-01

A novel design for a chip-scale miniature oven-controlled crystal oscillator (OCXO) is presented. In this design, all the main components of an OCXO--consisting of an oscillator, a temperature sensor, a heater, and temperature-control circuitry--are integrated on a single CMOS chip. The OCXO package size can be reduced significantly with this design, because the resonator does not require a separate package and most of the circuitry is integrated on a single CMOS chip. Other characteristics such as power consumption and warm-up time are also improved. Two different types of quartz resonators, an AT-cut tab mesa-type quartz crystal and a frame enclosed resonator, allow miniaturization of the OCXO structure. Neither of these quartz resonator types requires a separate package inside the oven structure; therefore, they can each be directly integrated with the custom-designed CMOS chip. The miniature OCXO achieves a frequency stability of +/- 0.35 ppm with an AT-cut tab mesa-type quartz crystal in the temperature range of 0 °C to 60 °C. The maximum power consumption of this miniature OCXO is 1.2 W at start-up and 303 mW at steady state. The warm-up time to reach the steady state is 190 s. These results using the proposed design are better than or the same as high-frequency commercial OCXOs.

A Harsh Environment Wireless Pressure Sensing Solution Utilizing High Temperature Electronics

PubMed Central

Yang, Jie

2013-01-01

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines. PMID:23447006

A harsh environment wireless pressure sensing solution utilizing high temperature electronics.

PubMed

Yang, Jie

2013-02-27

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines.

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

Curvature-correction-based time-domain CMOS smart temperature sensor with an inaccuracy of -0.8 °C-1.2 °C after one-point calibration from -40 °C to 120 °C

NASA Astrophysics Data System (ADS)

Chen, Chun-Chi; Lin, Shih-Hao; Lin, Yi

2014-06-01

This paper proposes a time-domain CMOS smart temperature sensor featuring on-chip curvature correction and one-point calibration support for thermal management systems. Time-domain inverter-based temperature sensors, which exhibit the advantages of low power and low cost, have been proposed for on-chip thermal monitoring. However, the curvature is large for the thermal transfer curve, which substantially affects the accuracy as the temperature range increases. Another problem is that the inverter is sensitive to process variations, resulting in difficulty for the sensors to achieve an acceptable accuracy for one-point calibration. To overcome these two problems, a temperature-dependent oscillator with curvature correction is proposed to increase the linearity of the oscillatory width, thereby resolving the drawback caused by a costly off-chip second-order master curve fitting. For one-point calibration support, an adjustable-gain time amplifier was adopted to eliminate the effect of process variations, with the assistance of a calibration circuit. The proposed circuit occupied a small area of 0.073 mm2 and was fabricated in a TSMC CMOS 0.35-μm 2P4M digital process. The linearization of the oscillator and the effect cancellation of process variations enabled the sensor, which featured a fixed resolution of 0.049 °C/LSB, to achieve an optimal inaccuracy of -0.8 °C to 1.2 °C after one-point calibration of 12 test chips from -40 °C to 120 °C. The power consumption was 35 μW at a sample rate of 10 samples/s.

Full temperature single event upset characterization of two microprocessor technologies

NASA Technical Reports Server (NTRS)

Nichols, Donald K.; Coss, James R.; Smith, L. S.; Rax, Bernard; Huebner, Mark

1988-01-01

Data for the 9450 I3L bipolar microprocessor and the 80C86 CMOS/epi (vintage 1985) microprocessor are presented, showing single-event soft errors for the full MIL-SPEC temperature range of -55 to 125 C. These data show for the first time that the soft-error cross sections continue to decrease with decreasing temperature at subzero temperatures. The temperature dependence of the two parts, however, is very different.

Wireless sensing system for non-invasive monitoring of attributes of contents in a container

NASA Technical Reports Server (NTRS)

Woodard, Stanley E. (Inventor)

2010-01-01

A wireless sensing system monitors the level, temperature, magnetic permeability and electrical dielectric constant of a non-gaseous material in a container. An open-circuit electrical conductor is shaped to form a two-dimensional geometric pattern that can store and transfer electrical and magnetic energy. The conductor resonates in the presence of a time-varying magnetic field to generate a harmonic response. The conductor is mounted in an environmentally-sealed housing. A magnetic field response recorder wirelessly transmits the time-varying magnetic field to power the conductor, and wirelessly detects the harmonic response that is an indication of at least one of level of the material in the container, temperature of the material in the container, magnetic permeability of the material in the container, and dielectric constant of the material in the container.

Wide-Temperature-Range Integrated Operational Amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Levanas, Greg; Chen, Yuan; Kolawa, Elizabeth; Cozy, Raymond; Blalock, Benjamin; Greenwell, Robert; Terry, Stephen

2007-01-01

A document discusses a silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) integrated- circuit operational amplifier to be replicated and incorporated into sensor and actuator systems of Mars-explorer robots. This amplifier is designed to function at a supply potential less than or equal to 5.5 V, at any temperature from -180 to +120 C. The design is implemented on a commercial radiation-hard SOI CMOS process rated for a supply potential of less than or equal to 3.6 V and temperatures from -55 to +110 C. The design incorporates several innovations to achieve this, the main ones being the following: NMOS transistor channel lengths below 1 m are generally not used because research showed that this change could reduce the adverse effect of hot carrier injection on the lifetimes of transistors at low temperatures. To enable the amplifier to withstand the 5.5-V supply potential, a circuit topology including cascade devices, clamping devices, and dynamic voltage biasing was adopted so that no individual transistor would be exposed to more than 3.6 V. To minimize undesired variations in performance over the temperature range, the transistors in the amplifier are biased by circuitry that maintains a constant inversion coefficient over the temperature range.

Development of an Internal Real-Time Wireless Diagnostic Tool for a Proton Exchange Membrane Fuel Cell

PubMed Central

Lee, Chi-Yuan; Chen, Chia-Hung; Tsai, Chao-Hsuan; Wang, Yu-Syuan

2018-01-01

To prolong the operating time of unmanned aerial vehicles which use proton exchange membrane fuel cells (PEMFC), the performance of PEMFC is the key. However, a long-term operation can make the Pt particles of the catalyst layer and the pollutants in the feedstock gas bond together (e.g., CO), so that the catalyst loses reaction activity. The performance decay and aging of PEMFC will be influenced by operating conditions, temperature, flow and CO concentration. Therefore, this study proposes the development of an internal real-time wireless diagnostic tool for PEMFC, and uses micro-electro-mechanical systems (MEMS) technology to develop a wireless and thin (<50 μm) flexible integrated (temperature, flow and CO) microsensor. The technical advantages are (1) compactness and three wireless measurement functions; (2) elastic measurement position and accurate embedding; (3) high accuracy and sensitivity and quick response; (4) real-time wireless monitoring of dynamic performance of PEMFC; (5) customized design and development. The flexible integrated microsensor is embedded in the PEMFC, three important physical quantities in the PEMFC, which are the temperature, flow and CO, can be measured simultaneously and instantly, so as to obtain the authentic and complete reaction in the PEMFC to enhance the performance of PEMFC and to prolong the service life. PMID:29342832

Development of an Internal Real-Time Wireless Diagnostic Tool for a Proton Exchange Membrane Fuel Cell.

PubMed

Lee, Chi-Yuan; Chen, Chia-Hung; Tsai, Chao-Hsuan; Wang, Yu-Syuan

2018-01-13

To prolong the operating time of unmanned aerial vehicles which use proton exchange membrane fuel cells (PEMFC), the performance of PEMFC is the key. However, a long-term operation can make the Pt particles of the catalyst layer and the pollutants in the feedstock gas bond together (e.g., CO), so that the catalyst loses reaction activity. The performance decay and aging of PEMFC will be influenced by operating conditions, temperature, flow and CO concentration. Therefore, this study proposes the development of an internal real-time wireless diagnostic tool for PEMFC, and uses micro-electro-mechanical systems (MEMS) technology to develop a wireless and thin (<50 μm) flexible integrated (temperature, flow and CO) microsensor. The technical advantages are (1) compactness and three wireless measurement functions; (2) elastic measurement position and accurate embedding; (3) high accuracy and sensitivity and quick response; (4) real-time wireless monitoring of dynamic performance of PEMFC; (5) customized design and development. The flexible integrated microsensor is embedded in the PEMFC, three important physical quantities in the PEMFC, which are the temperature, flow and CO, can be measured simultaneously and instantly, so as to obtain the authentic and complete reaction in the PEMFC to enhance the performance of PEMFC and to prolong the service life.

[Wireless Passive Body Sensor for Temperature Monitoring Using Near Field Communication Technology].

PubMed

Shi, Bo; Zhang, Li; Zhang, Genxuan; Tsau, Young; Zhang, Sai; Li, Lei

2017-01-01

In this study, we designed a wireless body temperature sensor (WBTS) based on near field communication (NFC) technology. Just attaching the WBTS to a mobile phone with NFC function, the real-time body temperature of human subjects can be acquired by an application program without seperate power supply. The WBTS is mainly composed of a digital body temperature probe (d-BTP), a NFC unit and an antenna. The d-BTP acquires and processes body temperature data through a micro control er, and the NFC unit and antenna are used for wireless energy transmission and data communication between the mobile phone and WBTS. UART communication protocol is used in the communication between the d-BTP and NFC unit, and data compression technique is adopted for improving transmission efficiency and decreasing power loss. In tests, the error of WBTS is ±0.1 oC, in range of 32 oC to 42 oC. The WBTS has advantages of high accuracy, low power loss, strong anti-interference ability, dispensation with independent power supply etc., and it can be integrated into wearable apparatuses for temperature monitoring and health management.

Online, In-Situ Monitoring Combustion Turbines Using Wireless Passive Ceramic Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Xun; An, Linan; Xu, Chengying

2013-06-30

The overall objective of this project is to develop high-temperature wireless passive ceramic sensors for online, real-time monitoring combustion turbines. During this project period, we have successfully demonstrated temperature sensors up to 1300°C and pressure sensors up to 800°C. The temperature sensor is based on a high-Q-factor dielectric resonator and the pressure sensor utilizes the evanescent-mode cavity to realize a pressure-sensitive high-Q-factor resonator. Both sensors are efficiently integrated with a compact antenna. These sensors are wirelessly interrogated. The resonant frequency change corresponding to either temperature or pressure can be identified using a time-domain gating technique. The sensors realized in thismore » project can survive harsh environments characterized by high temperatures (>1000°C) and corrosive gases, owing to the excellent material properties of polymer-derived ceramics (PDCs) developed at University of Central Florida. It is anticipated that this work will significantly advance the capability of high-temperature sensor technologies and be of a great benefit to turbine industry and their customers.« less

MMW/THz imaging using upconversion to visible, based on glow discharge detector array and CCD camera

NASA Astrophysics Data System (ADS)

Aharon, Avihai; Rozban, Daniel; Abramovich, Amir; Yitzhaky, Yitzhak; Kopeika, Natan S.

2017-10-01

An inexpensive upconverting MMW/THz imaging method is suggested here. The method is based on glow discharge detector (GDD) and silicon photodiode or simple CCD/CMOS camera. The GDD was previously found to be an excellent room-temperature MMW radiation detector by measuring its electrical current. The GDD is very inexpensive and it is advantageous due to its wide dynamic range, broad spectral range, room temperature operation, immunity to high power radiation, and more. An upconversion method is demonstrated here, which is based on measuring the visual light emitting from the GDD rather than its electrical current. The experimental setup simulates a setup that composed of a GDD array, MMW source, and a basic CCD/CMOS camera. The visual light emitting from the GDD array is directed to the CCD/CMOS camera and the change in the GDD light is measured using image processing algorithms. The combination of CMOS camera and GDD focal plane arrays can yield a faster, more sensitive, and very inexpensive MMW/THz camera, eliminating the complexity of the electronic circuits and the internal electronic noise of the GDD. Furthermore, three dimensional imaging systems based on scanning prohibited real time operation of such imaging systems. This is easily solved and is economically feasible using a GDD array. This array will enable us to acquire information on distance and magnitude from all the GDD pixels in the array simultaneously. The 3D image can be obtained using methods like frequency modulation continuous wave (FMCW) direct chirp modulation, and measuring the time of flight (TOF).

1.2V, 24mW/ch, 10bit, 80MSample/s Pipelined A/D Converters

NASA Astrophysics Data System (ADS)

Ueno, Takeshi; Ito, Tomohiko; Kurose, Daisuke; Yamaji, Takafumi; Itakura, Tetsuro

This paper describes 10-bit, 80-MSample/s pipelined A/D converters for wireless-communication terminals. To reduce power consumption, we employed the I/Q amplifier sharing technique [1] in which an amplifier is used for both I and Q channels. In addition, common-source, pseudo-differential (PD) amplifiers are used in all the conversion stages for further power reduction. Common-mode disturbances are removed by the proposed common-mode feedforward (CMFF) technique without using fully differential (FD) amplifiers. The converter was implemented in a 90-nm CMOS technology, and it consumes only 24mW/ch from a 1.2V power supply. The measured SNR and SNDR are 58.6dB and 52.2dB, respectively.

Novel wireless sensor system for dynamic characterization of borehole heat exchangers.

PubMed

Martos, Julio; Montero, Álvaro; Torres, José; Soret, Jesús; Martínez, Guillermo; García-Olcina, Raimundo

2011-01-01

The design and field test of a novel sensor system based in autonomous wireless sensors to measure the temperature of the heat transfer fluid along a borehole heat exchanger (BHE) is presented. The system, by means of two special valves, inserts and extracts miniaturized wireless sensors inside the pipes of the borehole, which are carried by the thermal fluid. Each sensor is embedded in a small sphere of just 25 mm diameter and 8 gr weight, containing a transceiver, a microcontroller, a temperature sensor and a power supply. A wireless data processing unit transmits to the sensors the acquisition configuration before the measurements, and also downloads the temperature data measured by the sensor along its way through the BHE U-tube. This sensor system is intended to improve the conventional thermal response test (TRT) and it allows the collection of information about the thermal characteristics of the geological structure of subsurface and its influence in borehole thermal behaviour, which in turn, facilitates the implementation of TRTs in a more cost-effective and reliable way.

Novel Wireless Sensor System for Dynamic Characterization of Borehole Heat Exchangers

PubMed Central

Martos, Julio; Montero, Álvaro; Torres, José; Soret, Jesús; Martínez, Guillermo; García-Olcina, Raimundo

2011-01-01

The design and field test of a novel sensor system based in autonomous wireless sensors to measure the temperature of the heat transfer fluid along a borehole heat exchanger (BHE) is presented. The system, by means of two specials valves, inserts and extracts miniaturized wireless sensors inside the pipes of the borehole, which are carried by the thermal fluid. Each sensor is embedded in a small sphere of just 25 mm diameter and 8 gr weight, containing a transceiver, a microcontroller, a temperature sensor and a power supply. A wireless data processing unit transmits to the sensors the acquisition configuration before the measurements, and also downloads the temperature data measured by the sensor along its way through the BHE U-tube. This sensor system is intended to improve the conventional thermal response test (TRT) and it allows the collection of information about the thermal characteristics of the geological structure of subsurface and its influence in borehole thermal behaviour, which in turn, facilitates the implementation of TRTs in a more cost-effective and reliable way. PMID:22164005

Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

NASA Astrophysics Data System (ADS)

Tu, Hongen

This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high-performance MEMS devices and electronics can be integrated into flexible substrates. The potential of our technology is enormous. Many wearable and implantable devices can be developed based on this technology.

Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

NASA Technical Reports Server (NTRS)

Bolton, Eric K.; Sayler, Gary S.; Nivens, David E.; Rochelle, James M.; Ripp, Steven; Simpson, Michael L.

2002-01-01

We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

A CMOS silicon spin qubit

PubMed Central

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; De Franceschi, S.

2016-01-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform. PMID:27882926

A highly sensitive CMOS digital Hall sensor for low magnetic field applications.

PubMed

Xu, Yue; Pan, Hong-Bin; He, Shu-Zhuan; Li, Li

2012-01-01

Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique.

PubMed

Fong, Chien-Fu; Dai, Ching-Liang; Wu, Chyan-Chyi

2015-10-23

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm.

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique

PubMed Central

Fong, Chien-Fu; Dai, Ching-Liang; Wu, Chyan-Chyi

2015-01-01

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm. PMID:26512671

Innovative monolithic detector for tri-spectral (THz, IR, Vis) imaging

NASA Astrophysics Data System (ADS)

Pocas, S.; Perenzoni, M.; Massari, N.; Simoens, F.; Meilhan, J.; Rabaud, W.; Martin, S.; Delplanque, B.; Imperinetti, P.; Goudon, V.; Vialle, C.; Arnaud, A.

2012-10-01

Fusion of multispectral images has been explored for many years for security and used in a number of commercial products. CEA-Leti and FBK have developed an innovative sensor technology that gathers monolithically on a unique focal plane arrays, pixels sensitive to radiation in three spectral ranges that are terahertz (THz), infrared (IR) and visible. This technology benefits of many assets for volume market: compactness, full CMOS compatibility on 200mm wafers, advanced functions of the CMOS read-out integrated circuit (ROIC), and operation at room temperature. The ROIC houses visible APS diodes while IR and THz detections are carried out by microbolometers collectively processed above the CMOS substrate. Standard IR bolometric microbridges (160x160 pixels) are surrounding antenna-coupled bolometers (32X32 pixels) built on a resonant cavity customized to THz sensing. This paper presents the different technological challenges achieved in this development and first electrical and sensitivity experimental tests.

A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System.

PubMed

Pérez-Bailón, Jorge; Márquez, Alejandro; Calvo, Belén; Medrano, Nicolás

2018-05-02

This paper presents a fully integrated 0.18 μm CMOS Low-Dropout (LDO) Voltage Regulator specifically designed to meet the stringent requirements of a battery-operated impedance spectrometry multichannel CMOS micro-instrument. The proposed LDO provides a regulated 1.8 V voltage from a 3.6 V to 1.94 V battery voltage over a −40 °C to 100 °C temperature range, with a compact topology (<0.10 mm² area) and a constant quiescent current of only 7.45 μA with 99.985% current efficiency, achieving remarkable state-of-art Figures of Merit (FoMs) for the regulating⁻transient performance. Experimental measurements validate its suitability for the target application, paving the way towards the future achievement of a truly portable System on Chip (SoC) platform for impedance sensors.

A CMOS silicon spin qubit

NASA Astrophysics Data System (ADS)

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

2016-11-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

A CMOS silicon spin qubit.

PubMed

Maurand, R; Jehl, X; Kotekar-Patil, D; Corna, A; Bohuslavskyi, H; Laviéville, R; Hutin, L; Barraud, S; Vinet, M; Sanquer, M; De Franceschi, S

2016-11-24

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

Pixel-based characterisation of CMOS high-speed camera systems

NASA Astrophysics Data System (ADS)

Weber, V.; Brübach, J.; Gordon, R. L.; Dreizler, A.

2011-05-01

Quantifying high-repetition rate laser diagnostic techniques for measuring scalars in turbulent combustion relies on a complete description of the relationship between detected photons and the signal produced by the detector. CMOS-chip based cameras are becoming an accepted tool for capturing high frame rate cinematographic sequences for laser-based techniques such as Particle Image Velocimetry (PIV) and Planar Laser Induced Fluorescence (PLIF) and can be used with thermographic phosphors to determine surface temperatures. At low repetition rates, imaging techniques have benefitted from significant developments in the quality of CCD-based camera systems, particularly with the uniformity of pixel response and minimal non-linearities in the photon-to-signal conversion. The state of the art in CMOS technology displays a significant number of technical aspects that must be accounted for before these detectors can be used for quantitative diagnostics. This paper addresses these issues.

Precision Voltage Referencing Techniques in MOS Technology.

NASA Astrophysics Data System (ADS)

Song, Bang-Sup

With the increasing complexity of functions on a single MOS chip, precision analog cicuits implemented in the same technology are in great demand so as to be integrated together with digital circuits. The future development of MOS data acquisition systems will require precision on-chip MOS voltage references. This dissertation will probe two most promising configurations of on-chip voltage references both in NMOS and CMOS technologies. In NMOS, an ion-implantation effect on the temperature behavior of MOS devices is investigated to identify the fundamental limiting factors of a threshold voltage difference as an NMOS voltage source. For this kind of voltage reference, the temperature stability on the order of 20ppm/(DEGREES)C is achievable with a shallow single-threshold implant and a low-current, high-body bias operation. In CMOS, a monolithic prototype bandgap reference is designed, fabricated and tested which embodies a curvature compensation and exhibits a minimized sensitivity to the process parameter variation. Experimental results imply that an average temperature stability on the order of 10ppm/(DEGREES)C with a production spread of less than 10ppm/(DEGREES)C feasible over the commercial temperature range.

Radiation from wireless technology elevates blood glucose and body temperature in 40-year-old type 1 diabetic male.

PubMed

Kleiber, Catherine E

2017-01-01

A type 1 diabetic male reports multiple instances when his blood glucose was dramatically elevated by the presence of microwave radiation from wireless technology and plummeted when the radiation exposure ended. In one instance, his body temperature elevated in addition to his blood glucose. Both remained elevated for nearly 48 h after exposure with the effect gradually decreasing. Possible mechanisms for microwave radiation elevating blood glucose include effects on glucose transport proteins and ion channels, insulin conformational changes and oxidative stress. Temperature elevation may be caused by microwave radiation-triggered Ca 2+ efflux, a mechanism similar to malignant hyperthermia. The potential for radiation from wireless technology to cause serious biological effects has important implications and necessitates a reevaluation of its near-ubiquitous presence, especially in hospitals and medical facilities.

Measurement and Control System Based on Wireless Senor Network for Granary

NASA Astrophysics Data System (ADS)

Song, Jian

A wireless measurement and control system for granary is developed for the sake of overcoming the shortcoming of the wired measurement and control system such as complex wiring and low anti-interference capacity. In this system, Zigbee technology is applied with Zigbee protocol stack development platform by TI, and wireless senor network is used to collect and control the temperature and the humidity. It is composed of the upper PC, central control node based on CC2530, sensor nodes, sensor modules and the executive device. The wireless sensor node is programmed by C language in IAR Embedded Workbench for MCS-51 Evaluation environment. The upper PC control system software is developed based on Visual C++ 6.0 platform. It is shown by experiments that data transmission in the system is accurate and reliable and the error of the temperature and humidity is below 2%, meeting the functional requirements for the granary measurement and control system.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Integration of Low-Power ASIC and MEMS Sensors for Monitoring Gastrointestinal Tract Using a Wireless Capsule System.

PubMed

Arefin, Md Shamsul; Redoute, Jean-Michel; Yuce, Mehmet Rasit

2018-01-01

This paper presents a wireless capsule microsystem to detect and monitor the pH, pressure, and temperature of the gastrointestinal tract in real time. This research contributes to the integration of sensors (microfabricated capacitive pH, capacitive pressure, and resistive temperature sensors), frequency modulation and pulse width modulation based interface IC circuits, microcontroller, and transceiver with meandered conformal antenna for the development of a capsule system. The challenges associated with the system miniaturization, higher sensitivity and resolution of sensors, and lower power consumption of interface circuits are addressed. The layout, PCB design, and packaging of a miniaturized wireless capsule, having diameter of 13 mm and length of 28 mm, have successfully been implemented. A data receiver and recorder system is also designed to receive physiological data from the wireless capsule and to send it to a computer for real-time display and recording. Experiments are performed in vitro using a stomach model and minced pork as tissue simulating material. The real-time measurements also validate the suitability of sensors, interface circuits, and meandered antenna for wireless capsule applications.

A comprehensive model on field-effect pnpn devices (Z2-FET)

NASA Astrophysics Data System (ADS)

Taur, Yuan; Lacord, Joris; Parihar, Mukta Singh; Wan, Jing; Martinie, Sebastien; Lee, Kyunghwa; Bawedin, Maryline; Barbe, Jean-Charles; Cristoloveanu, Sorin

2017-08-01

A comprehensive model for field-effect pnpn devices (Z2-FET) is presented. It is based on three current continuity equations coupled to two MOS equations. The model reproduces the characteristic S-shaped I-V curve when the device is driven by a current source. The negative resistance region at intermediate currents occurs as the center junction undergoes a steep transition from reverse to forward bias. Also playing a vital role are the mix and match of the minority carrier diffusion current and the generation recombination current. Physical insights to the key mechanisms at work are gained by regional approximations of the model, from which analytical expressions for the maximum and minimum voltages at the switching points are derived. From 1981 to 2001, he was with the Silicon Technology Department of IBM Thomas J. Watson Research Center, Yorktown Heights, New York, where he was Manager of Exploratory Devices and Processes. Areas in which he has worked and published include latchup-free 1-um CMOS, self-aligned TiSi2, 0.5-um CMOS and BiCMOS, shallow trench isolation, 0.25-um CMOS with n+/p + poly gates, SOI, low-temperature CMOS, and 0.1-um CMOS. Since October 2001, he has been a professor in the Department of Electrical and Computer Engineering, University of California, San Diego. Dr. Yuan Taur was elected a Fellow of the IEEE in 1998. He has served as Editor-in-Chief of the IEEE Electron Device Letters from 1999 to 2011. He authored or co-authored over 200 technical papers and holds 14 U.S. patents. He co-authored a book, ;Fundamentals of Modern VLSI Devices,; published by Cambridge University Press in 1998. The 2nd edition was published in 2009. Dr. Yuan Taur received IEEE Electron Devices Society's J. J. Ebers Award in 2012 ;for contributions to the advancement of several generations of CMOS process technologies.;

3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer.

PubMed

Asano, Sho; Muroyama, Masanori; Nakayama, Takahiro; Hata, Yoshiyuki; Nonomura, Yutaka; Tanaka, Shuji

2017-10-25

This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature cofired ceramic (LTCC) interposer with Au through vias by Au-Au thermo-compression bonding. The CMOS circuit and bonding pads on the sensor backside were electrically connected through Au bumps and the LTCC interposer, and the differential capacitive gap was formed by an Au sealing frame. A diaphragm for sensing 3-axis force was formed in the CMOS substrate. The dimensions of the completed sensor are 2.5 mm in width, 2.5 mm in length, and 0.66 mm in thickness. The fabricated sensor output coded 3-axis capacitive sensing data according to applied 3-axis force by three-dimensional (3D)-printed pins. The measured sensitivity was as high as over 34 Count/mN for normal force and 14 to 15 Count/mN for shear force with small noise, which corresponds to less than 1 mN. The hysteresis and the average cross-sensitivity were also found to be less than 2% full scale and 11%, respectively.

3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer †

PubMed Central

Asano, Sho; Nakayama, Takahiro; Hata, Yoshiyuki; Tanaka, Shuji

2017-01-01

This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature cofired ceramic (LTCC) interposer with Au through vias by Au-Au thermo-compression bonding. The CMOS circuit and bonding pads on the sensor backside were electrically connected through Au bumps and the LTCC interposer, and the differential capacitive gap was formed by an Au sealing frame. A diaphragm for sensing 3-axis force was formed in the CMOS substrate. The dimensions of the completed sensor are 2.5 mm in width, 2.5 mm in length, and 0.66 mm in thickness. The fabricated sensor output coded 3-axis capacitive sensing data according to applied 3-axis force by three-dimensional (3D)-printed pins. The measured sensitivity was as high as over 34 Count/mN for normal force and 14 to 15 Count/mN for shear force with small noise, which corresponds to less than 1 mN. The hysteresis and the average cross-sensitivity were also found to be less than 2% full scale and 11%, respectively. PMID:29068429

A low-power CMOS readout IC design for bolometer applications

NASA Astrophysics Data System (ADS)

Galioglu, Arman; Abbasi, Shahbaz; Shafique, Atia; Ceylan, Ömer; Yazici, Melik; Kaynak, Mehmet; Durmaz, Emre C.; Arsoy, Elif Gul; Gurbuz, Yasar

2017-02-01

A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (>= 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm2 pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process.

Novel Battery Management System with Distributed Wireless and Fiber Optic Sensors for Early Detection and Suppression of Thermal Runaway in Large Battery Packs, FY13 Q4 Report, ARPA-E Program: Advanced Management Protection of Energy Storage Devices (AMPE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farmer, J.; Chang, J.; Zumstein, J.

Technology has been developed that enables monitoring of individual cells in highcapacity lithium-ion battery packs, with a distributed array of wireless Bluetooth 4.0 tags and sensors, and without proliferation of extensive wiring harnesses. Given the safety challenges facing lithium-ion batteries in electric vehicle, civilian aviation and defense applications, these wireless sensors may be particularly important to these emerging markets. These wireless sensors will enhance the performance, reliability and safety of such energy storage systems. Specific accomplishments to date include, but are not limited to: (1) the development of wireless tags using Bluetooth 4.0 standard to monitor a large array ofmore » sensors in battery pack; (2) sensor suites enabling the simultaneous monitoring of cell voltage, cell current, cell temperature, and package strain, indicative of swelling and increased internal pressure, (3) small receivers compatible with USB ports on portable computers; (4) software drivers and logging software; (5) a 7S2P battery simulator, enabling the safe development of wireless BMS hardware in the laboratory; (6) demonstrated data transmission out of metal enclosures, including battery box, with small variable aperture opening; (7) test data demonstrating the accurate and reliable operation of sensors, with transmission of terminal voltage, cell temperature and package strain at distances up to 110 feet; (8) quantification of the data transmission error as a function of distance, in both indoor and outdoor operation; (9) electromagnetic interference testing during operation with live, high-capacity battery management system at Yardney Technical Products; (10) demonstrated operation with live high-capacity lithium-ion battery pack during charge-discharge cycling; (11) development of special polymer-gel lithium-ion batteries with embedded temperature sensors, capable of measuring the core temperature of individual of the cells during charge-discharge cycling at various temperatures, thereby enabling earlier warning of thermal runaway than possible with external sensors. Ultimately, the team plans to extend this work to include: (12) flexible wireless controllers, also using Bluetooth 4.0 standard, essential for balancing large-scale battery packs. LLNL received $925K for this project, and has $191K remaining after accomplishing these objectives.« less

An ultra-low-power RF transceiver for WBANs in medical applications

NASA Astrophysics Data System (ADS)

Qi, Zhang; Xiaofei, Kuang; Nanjian, Wu

2011-06-01

A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 μm CMOS process. Its core area is 1.6 mm2. The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 μA current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%.

CMOS analog baseband circuitry for an IEEE 802.11 b/g/n WLAN transceiver

NASA Astrophysics Data System (ADS)

Zheng, Gong; Xiaojie, Chu; Qianqian, Lei; Min, Lin; Yin, Shi

2012-11-01

An analog baseband circuit for a direct conversion wireless local area network (WLAN) transceiver in a standard 0.13-μm CMOS occupying 1.26 mm2 is presented. The circuit consists of active-RC receiver (RX) 4th order elliptic lowpass filters(LPFs), transmit (PGAs) with DC offset cancellation (DCOC) servo loops, and on-chip output buffers. The RX baseband gain can be programmed in the range of -11 to 49 dB in 2 dB steps with 50-30.2 nV/√Hz input referred noise (IRN) and a 21 to -41 dBm in-band 3rd order interception point (IIP3). The RX/TX LPF cutoff frequencies can be switched between 5 MHz, 10 MHz, and 20 MHz to fulfill the multimode 802.11b/g/n requirements. The TX baseband gain of the I/Q paths are tuned separately from -1.6 to 0.9 dB in 0.1 dB steps to calibrate TX I/Q gain mismatches. By using an identical integrator based elliptic filter synthesis method together with global compensation applied to the LPF capacitor array, the power consumption of the RX LPF is considerably reduced and the proposed chip draws 26.8 mA/8 mA by the RX/TX baseband paths from a 1.2 V supply.

System of launchable mesoscale robots for distributed sensing

NASA Astrophysics Data System (ADS)

Yesin, Kemal B.; Nelson, Bradley J.; Papanikolopoulos, Nikolaos P.; Voyles, Richard M.; Krantz, Donald G.

1999-08-01

A system of launchable miniature mobile robots with various sensors as payload is used for distributed sensing. The robots are projected to areas of interest either by a robot launcher or by a human operator using standard equipment. A wireless communication network is used to exchange information with the robots. Payloads such as a MEMS sensor for vibration detection, a microphone and an active video module are used mainly to detect humans. The video camera provides live images through a wireless video transmitter and a pan-tilt mechanism expands the effective field of view. There are strict restrictions on total volume and power consumption of the payloads due to the small size of the robot. Emerging technologies are used to address these restrictions. In this paper, we describe the use of microrobotic technologies to develop active vision modules for the mesoscale robot. A single chip CMOS video sensor is used along with a miniature lens that is approximately the size of a sugar cube. The device consumes 100 mW; about 5 times less than the power consumption of a comparable CCD camera. Miniature gearmotors 3 mm in diameter are used to drive the pan-tilt mechanism. A miniature video transmitter is used to transmit analog video signals from the camera.

Gbps wireless transceivers for high bandwidth interconnections in distributed cyber physical systems

NASA Astrophysics Data System (ADS)

Saponara, Sergio; Neri, Bruno

2015-05-01

In Cyber Physical Systems there is a growing use of high speed sensors like photo and video camera, radio and light detection and ranging (Radar/Lidar) sensors. Hence Cyber Physical Systems can benefit from the high communication data rate, several Gbps, that can be provided by mm-wave wireless transceivers. At such high frequency the wavelength is few mm and hence the whole transceiver including the antenna can be integrated in a single chip. To this aim this paper presents the design of 60 GHz transceiver architecture to ensure connection distances up to 10 m and data rate up to 4 Gbps. At 60 GHz there are more than 7 GHz of unlicensed bandwidth (available for free for development of new services). By using a CMOS SOI technology RF, analog and digital baseband circuitry can be integrated in the same chip minimizing noise coupling. Even the antenna is integrated on chip reducing cost and size vs. classic off-chip antenna solutions. Therefore the proposed transceiver can enable at physical layer the implementation of low cost nodes for a Cyber Physical System with data rates of several Gbps and with a communication distance suitable for home/office scenarios, or on-board vehicles such as cars, trains, ships, airplanes

A battery-free multichannel digital neural/EMG telemetry system for flying insects.

PubMed

Thomas, Stewart J; Harrison, Reid R; Leonardo, Anthony; Reynolds, Matthew S

2012-10-01

This paper presents a digital neural/EMG telemetry system small enough and lightweight enough to permit recording from insects in flight. It has a measured flight package mass of only 38 mg. This system includes a single-chip telemetry integrated circuit (IC) employing RF power harvesting for battery-free operation, with communication via modulated backscatter in the UHF (902-928 MHz) band. An on-chip 11-bit ADC digitizes 10 neural channels with a sampling rate of 26.1 kSps and 4 EMG channels at 1.63 kSps, and telemeters this data wirelessly to a base station. The companion base station transceiver includes an RF transmitter of +36 dBm (4 W) output power to wirelessly power the telemetry IC, and a digital receiver with a sensitivity of -70 dBm for 10⁻⁵ BER at 5.0 Mbps to receive the data stream from the telemetry IC. The telemetry chip was fabricated in a commercial 0.35 μ m 4M1P (4 metal, 1 poly) CMOS process. The die measures 2.36 × 1.88 mm, is 250 μm thick, and is wire bonded into a flex circuit assembly measuring 4.6 × 6.8 mm.

Wireless Multiplexed Surface Acoustic Wave Sensors Project

NASA Technical Reports Server (NTRS)

Youngquist, Robert C.

2014-01-01

Wireless Surface Acoustic Wave (SAW) Sensor is a new technology for obtaining multiple, real-time measurements under extreme environmental conditions. This project plans to develop a wireless multiplexed sensor system that uses SAW sensors, with no batteries or semiconductors, that are passive and rugged, can operate down to cryogenic temperatures and up to hundreds of degrees C, and can be used to sense a wide variety of parameters over reasonable distances (meters).

Design and Characterization of a Built-In CMOS TID Smart Sensor

NASA Astrophysics Data System (ADS)

Agustin, Javier; Gil, Carlos; Lopez-Vallejo, Marisa; Ituero, Pablo

2015-04-01

This paper describes a total ionization dose (TID) sensor that presents the following advantages: it is a digital sensor able to be integrated in CMOS circuits; it has a configurable sensitivity that allows radiation doses ranging from very low to high levels; its interface helps to integrate this design in a multidisciplinary sensor network; and it is self-timed, hence it does not need a clock signal. We designed, implemented and manufactured the sensor in a 0.35 μm CMOS commercial technology. It was irradiated with a 60Co source. This test was used to characterize the sensor in terms of the radiation response up to 575 krad. After irradiation, we monitored the sensor to control charge redistribution and annealing effects for 80 hours. We also exposed our design to meticulous temperature analysis from 0 to 50°C and we studied the acceleration on the annealing phenomena due to high temperatures. Sensor calibration takes into account the results of all tests. Finally we propose to use this sensor in a self-recovery system. The sensor manufactured in this work has an area of 0.047 mm 2, of which 22% is dedicated to measuring radiation. Its energy per conversion is 463 pJ.

Wireless Temperature Sensor Having No Electrical Connections and Sensing Method for Use Therewith

NASA Technical Reports Server (NTRS)

Woodard, Marie (Inventor)

2014-01-01

A wireless temperature sensor includes an electrical conductor and a dielectric material on the conductor. The conductor is electrically unconnected and is shaped for storage of an electric field and a magnetic field. In the presence of a time-varying magnetic field, the conductor resonates to generate harmonic electric and magnetic field responses, each of which has a frequency associated therewith. The material is selected such that it experiences changes in either dielectric or magnetic permeability attributes in the presence of a temperature change. Shifts from the sensor's baseline frequency response indicate that the material has experienced a temperature change.

ARPA-E Program: Advanced Management Protection of Energy Storage Devices (AMPED) - Fifth Quarterly Project Report - FY14 Q1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farmer, Joseph

Technology has been developed that enables monitoring of individual cells in high - capacity lithium-ion battery packs, with a distributed array of wireless Bluetooth 4.0 tags and sensors, and without proliferation of extensive wiring harnesses. Given the safety challenges facing lithium-ion batteries in electric vehicle, civilian aviation and defense applications, these wireless sensors may be particularly important to these emerging markets. These wireless sensors will enhance the performance, reliability and safety of such energy storage systems. Specific accomplishments to date include, but are not limited to: (1) the development of wireless tags using Bluetooth 4.0 standard to monitor a largemore » array of sensors in battery pack; (2) sensor suites enabling the simultaneous monitoring of cell voltage, cell current, cell temperature, and package strain, indicative of swelling and increased internal pressure, (3) small receivers compatible with USB ports on portable computers; (4) software drivers and logging software; (5) a 7S2P battery simulator, enabling the safe development of wireless BMS hardware in the laboratory; (6) demonstrated data transmission out of metal enclosures, including battery box, with small variable aperture opening; (7) test data demonstrating the accurate and reliable operation of sensors, with transmission of terminal voltage, cell temperature and package strain at distances up to 110 feet; (8) quantification of the data transmission error as a function of distance, in both indoor and outdoor operation; (9) electromagnetic interference testing during operation with live, high -capacity battery management system at Yardney Technical Products; (10) demonstrat ed operation with live high-capacity lithium-ion battery pack during charge-discharge cycling; (11) development of special polymer-gel lithium-ion batteries with embedded temperature sensors, capable of measuring the core temperature of individual of the cells during charge-discharge cycling at various temperatures, thereby enabling earlier warning of thermal runaway than possible with external sensors. Ultimately, the team plans to extend this work to include: (12) flexible wireless controllers, also using Bluetooth 4.0 standard, essential for balancing large-scale battery packs. LLNL received $925K for this project, and has $191K remaining after accomplishing these objectives.« less

ARPA-E Program: Advanced Management Protection of Energy Storage Devices (AMPED) - Monthly Report - November 2013

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farmer, J.

Technology has been developed that enables monitoring of individual cells in high - capacity lithium-ion battery packs, with a distributed array of wireless Bluetooth 4.0 tags and sensors, and without proliferation of extensive wiring harnesses. Given the safety challenges facing lithium-ion batteries in electric vehicle, civilian aviation and defense applications, these wireless sensors may be particularly important to these emerging markets. These wireless sensors will enhance the performance, reliability and safety of such energy storage systems. Specific accomplishments to date include, but are not limited to: (1) the development of wireless tags using Bluetooth 4.0 standard to monitor a largemore » array of sensors in battery pack; (2) sensor suites enabling the simultaneous monitoring of cell voltage, cell current, cell temperature, and package strain, indicative of swelling and increased internal pressure, (3) small receivers compatible with USB ports on portable computers; (4) software drivers and logging software; (5) a 7S2P battery simulator, enabling the safe development of wireless BMS hardware in the laboratory; (6) demonstrated data transmission out of metal enclosures, including battery box, with small variable aperture opening; (7) test data demonstrating the accurate and reliable operation of sensors, with transmission of terminal voltage, cell temperature and package strain at distances up to 110 feet; (8) quantification of the data transmission error as a function of distance, in both indoor and outdoor operation; (9) electromagnetic interference testing during operation with live, high -capacity battery management system at Yardney Technical Products; (10) demonstrat ed operation with live high-capacity lithium-ion battery pack during charge-discharge cycling; (11) development of special polymer-gel lithium-ion batteries with embedded temperature sensors, capable of measuring the core temperature of individual of the cells during charge-discharge cycling at various temperatures, thereby enabling earlier warning of thermal runaway than possible with external sensors. Ultimately, the team plans to extend this work to include: (12) flexible wireless controllers, also using Bluetooth 4.0 standard, essential for balancing large-scale battery packs. LLNL received $925K for this project, and has $191K remaining after accomplishing these objectives.« less

Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors.

PubMed

Zhang, Xiang; Zhao, Jianwen; Dou, Junyan; Tange, Masayoshi; Xu, Weiwei; Mo, Lixin; Xie, Jianjun; Xu, Wenya; Ma, Changqi; Okazaki, Toshiya; Cui, Zheng

2016-09-01

P-type and n-type top-gate carbon nanotube thin-film transistors (TFTs) can be selectively and simultaneously fabricated on the same polyethylene terephthalate (PET) substrate by tuning the types of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) inks, along with low temperature growth of HfO 2 thin films as shared dielectric layers. Both the p-type and n-type TFTs show good electrical properties with on/off ratio of ≈10 5 , mobility of ≈15 cm 2 V -1 s -1 , and small hysteresis. Complementary metal oxide semiconductor (CMOS)-like logic gates and circuits based on as-prepared p-type and n-type TFTs have been achieved. Flexible CMOS-like inverters exhibit large noise margin of 84% at low voltage (1/2 V dd = 1.5 V) and maximum voltage gain of 30 at V dd of 1.5 V and low power consumption of 0.1 μW. Both of the noise margin and voltage gain are one of the best values reported for flexible CMOS-like inverters at V dd less than 2 V. The printed CMOS-like inverters work well at 10 kHz with 2% voltage loss and delay time of ≈15 μs. A 3-stage ring oscillator has also been demonstrated on PET substrates and the oscillation frequency of 3.3 kHz at V dd of 1 V is achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wireless microwave acoustic sensor system for condition monitoring in power plant environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pereira da Cunha, Mauricio

This project successfully demonstrated novel wireless microwave acoustic temperature and pressure sensors that can be embedded into equipment and structures located in fossil fuel power plant environments to monitor the condition of components such as steam headers, re-heat lines, water walls, burner tubes, and power turbines. The wireless microwave acoustic sensor technology researched and developed through a collaborative partnership between the University of Maine and Environetix Technologies Corporation can provide a revolutionary impact in the power industry since it is anticipated that the wireless sensors will deliver reliable real-time sensing information in harsh power plant conditions that involve temperatures upmore » to 1100oC and pressures up to 750 psi. The work involved the research and development of novel high temperature harsh environment thin film electrodes, piezoelectric smart microwave acoustic sensing elements, sensor encapsulation materials that were engineered to function over long times up to 1100oC, and a radio-frequency (RF) wireless interrogation electronics unit that are located both inside and outside the high temperature harsh environment. The UMaine / Environetix team have interacted with diverse power plant facilities, and identified as a testbed a local power generation facility, which burns municipal solid waste (MSW), the Penobscot Energy Recovery Company (PERC), Orrington, Maine. In this facility Environetix / UMaine successfully implemented and tested multiple wireless temperature sensor systems within the harsh-environment of the economizer chamber and at the boiler tubes, transferring the developed technology to the power plant environment to perform real-time sensor monitoring experiments under typical operating conditions, as initially targeted in the project. The wireless microwave acoustic sensor technology developed under this project for power plant applications offers several significant advantages including wireless, battery-free, maintenance-free operation, and operation in the harsh-environment of power plant equipment up to about 1100 oC. Their small size and configuration allows flexible sensor placement and embedding of multiple sensor arrays into a variety of components within power systems that can be interrogated by a single RF unit. The outcomes of this project and technological transfer respond to a DOE analysis need, which indicated that if one percent efficiency in coal burning is achieved, an additional 2 gigawatt-hours of energy per year is generated and the resulting coal cost savings is $300 million per year, also accompanied by a reduction of more than 10 million metric tons of CO2 per year emitted into the atmosphere. Therefore, the developed harsh environment wireless microwave acoustic sensor technology and the technological transfer achievements that resulted from the execution of this project have significant impact for power plant equipment and systems and are well-positioned to contribute to the cost reduction in power generation, the increase in power plant efficiency, the improvement in maintenance, the reduction in down-time, and the decrease in environmental pollution. The technology is also in a position to be extended to address other types of high-temperature harsh-environment power plant and energy sector sensing needs.« less

AOI [3]: Smart Refractory Sensor Systems for Wireless Monitoring of Temperature, Health, and Degradation of Slagging Gasifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sabolsky, Edward M.; Bhattacharyya, Debangsu; Graham, David

The objective of the work was to develop refractory “smart bricks”, which would contain embedded temperature, strain/stress, and spallation sensors throughout the volume of high-chromia (-Cr2O3) refractory brick. The proposed work included work to interconnect the sensors to the reactor exterior, where the sensor signals may be processed by low-power electronics and transmitted wirelessly to a central processing hub. The data processing and wireless transmitter hardware was specifically designed to be isolated (with low power consumption) and to be adaptable to future implementation of energy-harvesting strategies for extended life. Finally, the collected data was incorporated into a model to estimatemore » refractory degradation, a technique that could help monitor the health of the refractory in real-time. The long-term goal of this program was to demonstrate high-temperature, wireless sensor arrays for in situ three-dimensional (3-D) refractory monitoring or mapping for slagging gasification systems. The research was in collaboration with HarbisonWalker International (HWI) Technology Center in West Mifflin, PA. HWI is a leading developer and manufacturer of ceramic refractory products for high-temperature applications. The work completed focused on the following areas: 1) Investigation of the chemical stability, microstructural evolution, grain growth kinetics, degree of homogeneity (quantitative image analysis), and electrical properties of refractory oxide-silicide composites at temperatures between 750-1450ºC; 2) Fabrication of silicide-alumina composite and oxide thermocouples and thermistor preforms and the development of techniques to embed them into high-chromia refractory bricks to form “smart bricks”; 3) Utilization of commercial off-the-shelf discrete components to prototype circuits for interfacing between smart brick sensors and the wireless sensor network. The prototypes were then used to design an integrated circuit for thermistor, thermocouple, and capacitive-based smart brick sensor interfacing; 4) Interfacing of the smart bricks with embedded sensors with wireless motes thus yielding a complete signal chain. This end-to-end data collection system was tested on a furnace heated to 1350 °C; 5) Development of a slag penetration model and a nonlinear unknown input filter for the data from the embedded sensors for estimating temperature and extent of slag penetration.« less

Ethanol Microsensors with a Readout Circuit Manufactured Using the CMOS-MEMS Technique

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-01

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro-mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm. PMID:25594598

Ethanol microsensors with a readout circuit manufactured using the CMOS-MEMS technique.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-14

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro -mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Design of online monitoring and forecasting system for electrical equipment temperature of prefabricated substation based on WSN

NASA Astrophysics Data System (ADS)

Qi, Weiran; Miao, Hongxia; Miao, Xuejiao; Xiao, Xuanxuan; Yan, Kuo

2016-10-01

In order to ensure the safe and stable operation of the prefabricated substations, temperature sensing subsystem, temperature remote monitoring and management subsystem, forecast subsystem are designed in the paper. Wireless temperature sensing subsystem which consists of temperature sensor and MCU sends the electrical equipment temperature to the remote monitoring center by wireless sensor network. Remote monitoring center can realize the remote monitoring and prediction by monitoring and management subsystem and forecast subsystem. Real-time monitoring of power equipment temperature, history inquiry database, user management, password settings, etc., were achieved by monitoring and management subsystem. In temperature forecast subsystem, firstly, the chaos of the temperature data was verified and phase space is reconstructed. Then Support Vector Machine - Particle Swarm Optimization (SVM-PSO) was used to predict the temperature of the power equipment in prefabricated substations. The simulation results found that compared with the traditional methods SVM-PSO has higher prediction accuracy.

The design of remote temperature monitoring system

NASA Astrophysics Data System (ADS)

Li, Biqing; Li, Zhao; Wei, Liuren

2017-08-01

This design is made on the basis of the single-chip microcomputer remote temperature monitoring system. STC89C51RC is the main core part, this design use the sensor DHT11 of temperature or humidity and wireless transceiver NRF24L01 the temperature of the test site for long-range wireless measurement and monitoring. The design contains the main system and the small system, of which the main system can show the actual test site temperature and humidity values, voice broadcast, out of control and receive data alarm function; The small system has the function of temperature and humidity, temperature monitoring and sending data. After debugging, the user customizable alarm upper and lower temperature, when the temperature exceeds limit value, the main system of buzzer alarm immediately. The system has simple structure, complete functions and can alarm in time, it can be widely used remote temperature acquisition and monitoring of the site.

Wireless Seismometer for Venus

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Scardelletti, Maximilian C.; Taylor, Brandt; Beard, Steve; Clougherty, Brian; Meredith, Roger D.; Beheim, Glenn M.; Kiefer, Walter S.; Hunter, Gary W.

2014-01-01

Measuring the seismic activity of Venus is critical to understanding its composition and interior dynamics. Because Venus has an average surface temperature of 462 C and the challenge of providing cooling to multiple seismometers, a high temperature, wireless sensor using a wide bandgap semiconductor is an attractive option. This paper presents progress towards a seismometer sensor with wireless capabilities for Venus applications. A variation in inductance of a coil caused by a 1 cm movement of a ferrite probe held in the coil and attached to a balanced leaf-spring seismometer causes a variation of 80 MHz in the transmitted signal from the oscillator sensor system at 420 C, which correlates to a 10 kHz mm sensitivity when the ferrite probe is located at the optimum location in the coil.

A method for compression of intra-cortically-recorded neural signals dedicated to implantable brain-machine interfaces.

PubMed

Shaeri, Mohammad Ali; Sodagar, Amir M

2015-05-01

This paper proposes an efficient data compression technique dedicated to implantable intra-cortical neural recording devices. The proposed technique benefits from processing neural signals in the Discrete Haar Wavelet Transform space, a new spike extraction approach, and a novel data framing scheme to telemeter the recorded neural information to the outside world. Based on the proposed technique, a 64-channel neural signal processor was designed and prototyped as a part of a wireless implantable extra-cellular neural recording microsystem. Designed in a 0.13- μ m standard CMOS process, the 64-channel neural signal processor reported in this paper occupies ∼ 0.206 mm(2) of silicon area, and consumes 94.18 μW when operating under a 1.2-V supply voltage at a master clock frequency of 1.28 MHz.

Design of a delay-locked-loop-based time-to-digital converter

NASA Astrophysics Data System (ADS)

Zhaoxin, Ma; Xuefei, Bai; Lu, Huang

2013-09-01

A time-to-digital converter (TDC) based on a reset-free and anti-harmonic delay-locked loop (DLL) circuit for wireless positioning systems is discussed and described. The DLL that generates 32-phase clocks and a cycle period detector is employed to avoid “false locking". Driven by multiphase clocks, an encoder detects pulses and outputs the phase of the clock when the pulse arrives. The proposed TDC was implemented in SMIC 0.18 μm CMOS technology, and its core area occupies 0.7 × 0.55 mm2. The reference frequency ranges from 20 to 150 MHz. An LSB resolution of 521 ps can be achieved by using a reference clock of 60 MHz and the DNL is less than ±0.75 LSB. It dissipates 31.5 mW at 1.8 V supply voltage.

Development of a mini-mobile digital radiography system by using wireless smart devices.

PubMed

Jeong, Chang-Won; Joo, Su-Chong; Ryu, Jong-Hyun; Lee, Jinseok; Kim, Kyong-Woo; Yoon, Kwon-Ha

2014-08-01

The current technologies that trend in digital radiology (DR) are toward systems using portable smart mobile as patient-centered care. We aimed to develop a mini-mobile DR system by using smart devices for wireless connection into medical information systems. We developed a mini-mobile DR system consisting of an X-ray source and a Complementary Metal-Oxide Semiconductor (CMOS) sensor based on a flat panel detector for small-field diagnostics in patients. It is used instead of the systems that are difficult to perform with a fixed traditional device. We also designed a method for embedded systems in the development of portable DR systems. The external interface used the fast and stable IEEE 802.11n wireless protocol, and we adapted the device for connections with Picture Archiving and Communication System (PACS) and smart devices. The smart device could display images on an external monitor other than the monitor in the DR system. The communication modules, main control board, and external interface supporting smart devices were implemented. Further, a smart viewer based on the external interface was developed to display image files on various smart devices. In addition, the advantage of operators is to reduce radiation dose when using remote smart devices. It is integrated with smart devices that can provide X-ray imaging services anywhere. With this technology, it can permit image observation on a smart device from a remote location by connecting to the external interface. We evaluated the response time of the mini-mobile DR system to compare to mobile PACS. The experimental results show that our system outperforms conventional mobile PACS in this regard.

Wireless capsule endoscopy: a comparison with push enteroscopy in patients with gastroscopy and colonoscopy negative gastrointestinal bleeding

PubMed Central

Mylonaki, M; Fritscher-Ravens, A; Swain, P

2003-01-01

Background: The development of wireless capsule endoscopy allows painless imaging of the small intestine. Its clinical use is not yet defined. The aim of this study was to compare the clinical efficacy and technical performance of capsule endoscopy and push enteroscopy in a series of 50 patients with colonoscopy and gastroscopy negative gastrointestinal bleeding. Methods: A wireless capsule endoscope was used containing a CMOS colour video imager, transmitter, and batteries. Approximately 50 000 transmitted images are received by eight abdominal aerials and stored on a portable solid state recorder, which is carried on a belt. Push enteroscopy was performed using a 240 cm Olympus video enteroscope. Results: Studies in 14 healthy volunteers gave information on normal anatomical appearances and preparation. In 50 patients with gastrointestinal bleeding and negative colonoscopy and gastroscopy, push enteroscopy was compared with capsule endoscopy. A bleeding source was discovered in the small intestine in 34 of 50 patients (68%). These included angiodysplasia (16), focal fresh bleeding (eight), apthous ulceration suggestive of Crohn’s disease (three), tumour (two), Meckel’s diverticulum (two), ileal ulcer (one), jejunitis (one), and ulcer due to intussusception (one). One additional intestinal diagnosis was made by enteroscopy. The yield of push enteroscopy in evaluating obscure bleeding was 32% (16/50). The capsule identified significantly more small intestinal bleeding sources than push enteroscopy (p<0.05). Patients preferred capsule endoscopy to push enteroscopy (p<0.001). Conclusions: In this study capsule endoscopy was superior to push enteroscopy in the diagnosis of recurrent bleeding in patients who had a negative gastroscopy and colonoscopy. It was safe and well tolerated. PMID:12865269

BCB Bonding Technology of Back-Side Illuminated COMS Device

NASA Astrophysics Data System (ADS)

Wu, Y.; Jiang, G. Q.; Jia, S. X.; Shi, Y. M.

2018-03-01

Back-side illuminated CMOS(BSI) sensor is a key device in spaceborne hyperspectral imaging technology. Compared with traditional devices, the path of incident light is simplified and the spectral response is planarized by BSI sensors, which meets the requirements of quantitative hyperspectral imaging applications. Wafer bonding is the basic technology and key process of the fabrication of BSI sensors. 6 inch bonding of CMOS wafer and glass wafer was fabricated based on the low bonding temperature and high stability of BCB. The influence of different thickness of BCB on bonding strength was studied. Wafer bonding with high strength, high stability and no bubbles was fabricated by changing bonding conditions.

Multi-purpose CMOS sensor interface for low-power applications

NASA Astrophysics Data System (ADS)

Wouters, P.; de Cooman, M.; Puers, R.

1994-08-01

A dedicated low-power CMOS transponder microchip is presented as part of a novel telemetry implant for biomedical applications. This mixed analog-digital circuit contains an identification code and collects information on physiological parameters, i.e., body temperature and physical activity, and on the status of the battery. To minimize the amount of data to be transmitted, a dedicated signal processing algorithm is embedded within its circuitry. All telemetry functions (encoding, modulation, generation of the carrier) are implemented on the integrated circuit. Emphasis is on a high degree of flexibility towards sensor inputs and internal data management, extreme miniaturization, and low-power consumption to allow a long implantation lifetime.

An easily accessible carbon material derived from carbonization of polyacrylonitrile ultrathin films: ambipolar transport properties and application in a CMOS-like inverter.

PubMed

Jiao, Fei; Zhang, Fengjiao; Zang, Yaping; Zou, Ye; Di, Chong'an; Xu, Wei; Zhu, Daoben

2014-03-04

Ultrathin carbon films were prepared by carbonization of a solution processed polyacrylonitrile (PAN) film in a moderate temperature range (500-700 °C). The films displayed balanced hole (0.50 cm(2) V(-1) s(-1)) and electron mobilities (0.20 cm(2) V(-1) s(-1)) under ambient conditions. Spectral characterization revealed that the electrical transport is due to the formation of sp(2) hybridized carbon during the carbonization process. A CMOS-like inverter demonstrated the potential application of this material in the area of carbon electronics, considering its processability and low-cost.

2.45 GHz Rectenna Designed for Wireless Sensors Operating at 500 C

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Jordan, Jennifer L.; Downey, Alan N.; Neudeck, Philip G.

2004-01-01

High temperature wireless sensors that operate at 500 C are required for aircraft engine monitoring and performance improvement These sensors would replace currently used hard-wired sensors and lead to a substantial reduction in mass. However, even if the sensor output data is transmitted wirelessly to a receiver in the cooler part of the engine, and the associated cables are eliminated, DC power cables are still required to operate the sensors and power the wireless circuits. To solve this problem, NASA is developing a rectenna, a circuit that receives RF power and converts it to DC power. The rectenna would be integrated with the wireless sensor, and the RF transmitter that powers the rectenna would be located in the cooler part of the engine. In this way, no cables to or from the sensors are required. Rectennas haw been demonstrated at ambient room temperature, but to date, no high temperature rectennas haw been reported. In this paper, we report the first rectenna designed for 2.45 GHz operation at 500 C. The circuit consists of a microstrip dipole antenna, a stripline impedance matching circuit, and a stripline low pass filter to prevent transmission of higher harmonics created by the rectifying diode fabricated on an Alumina substrate. The rectifying diode is the gate to source junction of a 6H Sic MESFET and the capacitor and load resistor are chip elements that are each bonded to the Alumina substrate. Each element and the hybrid, rectenna circuit haw been characterized through 500 C.

Development of Self-Powered Wireless-Ready High Temperature Electrochemical Sensors for In-Situ Corrosion Monitoring for Boiler Tubes in Next Generation Coal-based Power Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xingbo

The key innovation of this project is the synergy of the high temperature sensor technology based on the science of electrochemical measurement and state-of-the-art wireless communication technology. A novel self-powered wireless high temperature electrochemical sensor system has been developed for coal-fired boilers used for power generation. An initial prototype of the in-situ sensor demonstrated the capability of the wireless communication system in the laboratory and in a pilot plant (Industrial USC Boiler Setting) environment to acquire electrochemical potential and current signals during the corrosion process. Uniform and localized under-coal ash deposit corrosion behavior of Inconel 740 superalloy has been studiedmore » at different simulated coal ash hot corrosion environments using the developed sensor. Two typical potential noise patterns were found to correlate with the oxidation and sulfidation stages in the hot coal ash corrosion process. Two characteristic current noise patterns indicate the extent of the corrosion. There was a good correlation between the responses of electrochemical test data and the results from corroded surface analysis. Wireless electrochemical potential and current noise signals from a simulated coal ash hot corrosion process were concurrently transmitted and recorded. The results from the performance evaluation of the sensor confirm a high accuracy in the thermodynamic and kinetic response represented by the electrochemical noise and impedance test data.« less

A 10.6mm3 Fully-Integrated, Wireless Sensor Node with 8GHz UWB Transmitter.

PubMed

Kim, Hyeongseok; Kim, Gyouho; Lee, Yoonmyung; Foo, Zhiyoong; Sylvester, Dennis; Blaauw, David; Wentzloff, David

2015-06-01

This paper presents a complete, autonomous, wireless temperature sensor, fully encapsulated in a 10.6mm 3 volume. The sensor includes solar energy harvesting with an integrated 2 μAh battery, optical receiver for programming, microcontroller and memory, 8GHz UWB transmitter, and miniaturized custom antennas with a wireless range of 7 meters. Full, stand-alone operation was demonstrated for the first time for a system of this size and functionality.

Wireless Infrared Data Link

NASA Technical Reports Server (NTRS)

Roth, Timothy E.

1995-01-01

Infrared transmitter and receiver designed for wireless transmission of information on measured physical quantity (for example, temperature) from transducer device to remote-acquisition system. In transmitter, output of transducer amplified and shifted with respect to bias or reference level, then fed to voltage-to-frequency converter to control frequency of repetition of current pulses applied to infrared-light-emitting diode. In receiver, frequency of repetition of pulses converted back into voltage indicative of temperature or other measured quantity. Potential applications include logging data while drilling for oil, transmitting measurements from rotors in machines without using slip rings, remote monitoring of temperatures and pressures in hazardous locations, and remote continuous monitoring of temperatures and blood pressures in medical patients, who thus remain mobile.

(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, X.; Mamaluy, D.; Cyr, E. C.

As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. In orderTo facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. Moreover, the model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device ismore » determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.« less

(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

DOE PAGES

Gao, X.; Mamaluy, D.; Cyr, E. C.; ...

2016-05-10

As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. In orderTo facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. Moreover, the model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device ismore » determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.« less

CMOS Rad-Hard Front-End Electronics for Precise Sensors Measurements

NASA Astrophysics Data System (ADS)

Sordo-Ibáñez, Samuel; Piñero-García, Blanca; Muñoz-Díaz, Manuel; Ragel-Morales, Antonio; Ceballos-Cáceres, Joaquín; Carranza-González, Luis; Espejo-Meana, Servando; Arias-Drake, Alberto; Ramos-Martos, Juan; Mora-Gutiérrez, José Miguel; Lagos-Florido, Miguel Angel

2016-08-01

This paper reports a single-chip solution for the implementation of radiation-tolerant CMOS front-end electronics (FEE) for applications requiring the acquisition of base-band sensor signals. The FEE has been designed in a 0.35μm CMOS process, and implements a set of parallel conversion channels with high levels of configurability to adapt the resolution, conversion rate, as well as the dynamic input range for the required application. Each conversion channel has been designed with a fully-differential implementation of a configurable-gain instrumentation amplifier, followed by an also configurable dual-slope ADC (DS ADC) up to 16 bits. The ASIC also incorporates precise thermal monitoring, sensor conditioning and error detection functionalities to ensure proper operation in extreme environments. Experimental results confirm that the proposed topologies, in conjunction with the applied radiation-hardening techniques, are reliable enough to be used without loss in the performance in environments with an extended temperature range (between -25 and 125 °C) and a total dose beyond 300 krad.

Battery-free Wireless Sensor Network For Advanced Fossil-Fuel Based Power Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yi Jia

2011-02-28

This report summarizes technical progress achieved during the project supported by the Department of Energy under Award Number DE-FG26-07NT4306. The aim of the project was to conduct basic research into battery-free wireless sensing mechanism in order to develop novel wireless sensors and sensor network for physical and chemical parameter monitoring in a harsh environment. Passive wireless sensing platform and five wireless sensors including temperature sensor, pressure sensor, humidity sensor, crack sensor and networked sensors developed and demonstrated in our laboratory setup have achieved the objective for the monitoring of various physical and chemical parameters in a harsh environment through remotemore » power and wireless sensor communication, which is critical to intelligent control of advanced power generation system. This report is organized by the sensors developed as detailed in each progress report.« less

Micromechanical Signal Processors

NASA Astrophysics Data System (ADS)

Nguyen, Clark Tu-Cuong

Completely monolithic high-Q micromechanical signal processors constructed of polycrystalline silicon and integrated with CMOS electronics are described. The signal processors implemented include an oscillator, a bandpass filter, and a mixer + filter--all of which are components commonly required for up- and down-conversion in communication transmitters and receivers, and all of which take full advantage of the high Q of micromechanical resonators. Each signal processor is designed, fabricated, then studied with particular attention to the performance consequences associated with miniaturization of the high-Q element. The fabrication technology which realizes these components merges planar integrated circuit CMOS technologies with those of polysilicon surface micromachining. The technologies are merged in a modular fashion, where the CMOS is processed in the first module, the microstructures in a following separate module, and at no point in the process sequence are steps from each module intermixed. Although the advantages of such modularity include flexibility in accommodating new module technologies, the developed process constrained the CMOS metallization to a high temperature refractory metal (tungsten metallization with TiSi _2 contact barriers) and constrained the micromachining process to long-term temperatures below 835^circC. Rapid-thermal annealing (RTA) was used to relieve residual stress in the mechanical structures. To reduce the complexity involved with developing this merged process, capacitively transduced resonators are utilized. High-Q single resonator and spring-coupled micromechanical resonator filters are also investigated, with particular attention to noise performance, bandwidth control, and termination design. The noise in micromechanical filters is found to be fairly high due to poor electromechanical coupling on the micro-scale with present-day technologies. Solutions to this high series resistance problem are suggested, including smaller electrode-to-resonator gaps to increase the coupling capacitance. Active Q-control techniques are demonstrated which control the bandwidth of micromechanical filters and simulate filter terminations with little passband distortion. Noise analysis shows that these active techniques are relatively quiet when compared with other resistive techniques. Modulation techniques are investigated whereby a single resonator or a filter constructed from several such resonators can provide both a mixing and a filtering function, or a filtering and amplitude modulation function. These techniques center around the placement of a carrier signal on the micromechanical resonator. Finally, micro oven stabilization is investigated in an attempt to null the temperature coefficient of a polysilicon micromechanical resonator. Here, surface micromachining procedures are utilized to fabricate a polysilicon resonator on a microplatform--two levels of suspension--equipped with heater and temperature sensing resistors, which are then imbedded in a feedback loop to control the platform (and resonator) temperature. (Abstract shortened by UMI.).

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

NASA Astrophysics Data System (ADS)

Hande, Vinayak; Shojaei Baghini, Maryam

2015-08-01

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over -25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2

Soil moisture and plant canopy temperature sensing for irrigation application in cotton

USDA-ARS?s Scientific Manuscript database

A wireless sensor network was deployed in a cotton field to monitor soil water status for irrigation. The network included two systems, a Decagon system and a microcontroller-based system. The Decagon system consists of soil volumetric water-content sensors, wireless data loggers, and a central data...

Design of a multi-axis implantable MEMS sensor for intraosseous bone stress monitoring

NASA Astrophysics Data System (ADS)

Alfaro, Fernando; Weiss, Lee; Campbell, Phil; Miller, Mark; Fedder, Gary K.

2009-08-01

The capability to assess the biomechanical properties of living bone is important for basic research as well as the clinical management of skeletal trauma and disease. Even though radiodensitometric imaging is commonly used to infer bone quality, bone strength does not necessarily correlate well with these non-invasive measurements. This paper reports on the design, fabrication and initial testing of an implantable ultra-miniature multi-axis sensor for directly measuring bone stresses at a micro-scale. The device, which is fabricated with CMOS-MEMS processes, is intended to be permanently implanted within open fractures, or embedded in bone grafts, or placed on implants at the interfaces between bone and prosthetics. The stress sensor comprises an array of piezoresistive pixels to detect a stress tensor at the interfacial area between the MEMS chip and bone, with a resolution to 100 Pa, in 1 s averaging. The sensor system design and manufacture is also compatible with the integration of wireless RF telemetry, for power and data retrieval, all within a 3 mm × 3 mm × 0.3 mm footprint. The piezoresistive elements are integrated within a textured surface to enhance sensor integration with bone. Finite element analysis led to a sensor design for normal and shear stress detection. A wired sensor was fabricated in the Jazz 0.35 µm BiCMOS process and then embedded in mock bone material to characterize its response to tensile and bending loads up to 250 kPa.

Energy-autonomous wireless sensor nodes for automotive applications, powered by thermoelectric energy harvesting

NASA Astrophysics Data System (ADS)

Mehne, P.; Lickert, F.; Bäumker, E.; Kroener, M.; Woias, P.

2016-11-01

In this paper we will first present the measurement of temperatures on different positions at a diesel-powered car. As a result, several locations are identified as suitable to implement a wireless sensor node powered by thermal energy harvesting. Based on the data gained a thermoelectric generator (TEG) has been selected, and measurements of energy generation have been performed. Further, a complete energy-autonomous wireless sensor node was designed, including the TEG with its mounting bracket, an electronic power management, and a Bluetooth Low Energy (BLE) sensor node. Based on temperature differences from -10 K up to 75.3 K occurring in test drives, a low power set up was chosen to achieve a system startup time below 10 minutes and to ensure service even under difficult ambient conditions, like high ambient temperatures or a slow movement of the car in stocking traffic. 2 minutes after starting the engine a power about of 10 mW is available from the chosen TEG, and in peak the power exceeds 1 W. In a 50 minute test drive it was possible to generate 650 J of energy. This information was used to develop the complete system, demonstrating the opportunity to deploy energy-autonomous wireless sensor nodes in a car, e.g. for exhaust gas monitoring. The system is used to gather sensor data, like temperature and humidity, and transmits data successfully via BLE to a prepared main node based on a Raspberry Pi.

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 μm process with a high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Senyukov, S.; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

2013-12-01

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 1013neq /cm2 was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz 0.18 μm CMOS process for the ALICE ITS upgrade.

Development of a 750x750 pixels CMOS imager sensor for tracking applications

NASA Astrophysics Data System (ADS)

Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

2017-11-01

Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750x750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750x750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest… A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750x750 image sensor such as low power CMOS design (3.3V, power consumption<100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on-chip control and timing function) enabling a high flexibility architecture, make this imager a good candidate for high performance tracking applications.

An electrostatic CMOS/BiCMOS Lithium ion vibration-based harvester-charger IC

NASA Astrophysics Data System (ADS)

Torres, Erick Omar

Self-powered microsystems, such as wireless transceiver microsensors, appeal to an expanding application space in monitoring, control, and diagnosis for commercial, industrial, military, space, and biomedical products. As these devices continue to shrink, their microscale dimensions allow them to be unobtrusive and economical, with the potential to operate from typically unreachable environments and, in wireless network applications, deploy numerous distributed sensing nodes simultaneously. Extended operational life, however, is difficult to achieve since their limited volume space constrains the stored energy available, even with state-of-the-art technologies, such as thin-film lithium-ion batteries (Li Ion) and micro-fuel cells. Harvesting ambient energy overcomes this deficit by continually replenishing the energy reservoir and, as a result, indefinitely extending system lifetime. In this work, an electrostatic harvester that harnesses ambient kinetic energy from vibrations to charge an energy-storage device (e.g., a battery) is investigated, developed, and evaluated. The proposed harvester charges and holds the voltage across a vibration-sensitive variable capacitor so that vibrations can induce it to generate current into the battery when capacitance decreases (as its plates separate). The challenge is that energy is harnessed at relatively slow rates, producing low output power, and the electronics required to transfer it to charge a battery can easily demand more than the power produced. To this end, the system reduces losses by time-managing and biasing its circuits to operate only when needed and with just enough energy while charging the capacitor through an efficient quasi-lossless inductor-based precharger. As result, the proposed energy harvester stores a net energy gain in the battery during every vibration cycle. Two energy-harvesting integrated circuits (IC) were analyzed, designed, developed, and validated using a 0.7-im BiCMOS process and a 30-Hz mechanical variable capacitor. The precharger, harvester, monitoring, and control microelectronics of the first prototype draw sufficient power to operate and at the same time produce experimentally 1.27, 2.14, and 2.87 nJ per vibration cycle for battery voltages at 2.7, 3.5, and 4.2 V, which with 30-Hz vibrations produce 38.1, 64.2, and 86.1 nW. By incorporating into the system a self-tuning loop that adapts optimally the inductor-based precharger to varying battery voltages, the second prototype harnessed and gained 1.93, 2.43, and 3.89 nJ per vibration cycle at battery voltages 2.7, 3.5, and 4.2 V, generating 57.89, 73.02, and 116.55 nW at 30 Hz. The harvester ultimately charges from 2.7 to 4.2 V a 1-muF capacitor (which emulates a small thin-film Li Ion) in approximately 69 s, harnessing in the same length of time 47.9% more energy than with a non-adapting harvester.

A 2.4 GHz ULP reconfigurable asymmetric transceiver for single-chip wireless neural recording IC.

PubMed

Tan, Jun; Liew, Wen-Sin; Heng, Chun-Huat; Lian, Yong

2014-08-01

This paper presents a 2.4 GHz ultra-low-power (ULP) reconfigurable asymmetric transceiver and demonstrates its application in wireless neural recording. Fabricated in 0.13 μm CMOS technology, the transceiver is optimized for sensor-gateway communications within a star-shaped network, and supports both the sensor and gateway operation modes. Binary phase-shift keying (BPSK) modulation with high data rate (DR) of 1 to 8 Mbps is used in the uplink from sensor to gateway, while on-off keying (OOK) modulation with low DR of 100 kbps is adopted in the downlink. A fully integrated Class-E PA with moderate output power has also been proposed and achieves power efficiency of 53%. To minimize area usage, inductor reuse is adopted between PA and LNA, and eliminates the need of lossy T/R switch in the RF signal path. When used as sensor, the transceiver with frequency locked phase-locked loop (PLL) achieves TX (BPSK) power efficiency of 28% @ 0 dBm output power, and RX (OOK) sensitivity of -80 dBm @ 100 kbps while consuming only 780 μW . When configured as gateway, the transceiver achieves sensitivity levels of -92, -84.5, and -77 dBm for 1, 5, and 8 Mbps BPSK, respectively. The transceiver is integrated with an 8-channel neural recording front-end, and neural signals from a rat are captured to verify the system functionality.

Floating Gate CMOS Dosimeter With Frequency Output

NASA Astrophysics Data System (ADS)

Garcia-Moreno, E.; Isern, E.; Roca, M.; Picos, R.; Font, J.; Cesari, J.; Pineda, A.

2012-04-01

This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.

An integrated CMOS bio-potential amplifier with a feed-forward DC cancellation topology.

PubMed

Parthasarathy, Jayant; Erdman, Arthur G; Redish, Aaron D; Ziaie, Babak

2006-01-01

This paper describes a novel technique to realize an integrated CMOS bio-potential amplifier with a feedforward DC cancellation topology. The amplifier is designed to provide substantial DC cancellation even while amplifying very low frequency signals. More than 80 dB offset rejection ratio is achieved without any external capacitors. The cancellation scheme is robust against process and temperature variations. The amplifier is fabricated through MOSIS AMI 1.5 microm technology (0.05 mm2 area). Measurement results show a gain of 43.5 dB in the pass band (<1 mHz-5 KHz), an input referred noise of 3.66 microVrms, and a current consumption of 22 microA.

A High Sensitivity Bio Photosensor for Detecting a Luciferase Bioluminescence

NASA Astrophysics Data System (ADS)

Kameda, Seiji; Moriyama, Yusuke; Noda, Kenichi; Iwata, Atsushi

A high sensitivity CMOS bio photosensor applicable to a bioluminescent assay was developed with a 0.18µm CMOS image sensor (CIS) process. The bio photosensor consisting of a photosensor and a PWM 20bit A/D converter achieved high sensitivity for detecting a extremely low bioluminescence due to a large photodiode area, a long exposure time and the other noise reduction techniques. The bio photosensor chip has a 2×4 sensor array on a 2.45×2.45mm2 die. Experimental results with the bioluminescence showed the chip can detect below 10-5lux luminescence at room temperature and the power consumption is 32µW.

A Small-Area and Low-Power SoC for Less-Invasive Pressure Sensing Capsules in Ambulatory Urodynamic Monitoring

NASA Astrophysics Data System (ADS)

Iwato, Hirofumi; Sakanushi, Keishi; Takeuchi, Yoshinori; Imai, Masaharu

To measure the detrusor pressure for diagnosing lower urinary tract symptoms, we designed a small-area and low-power System on a Chip (SoC). The SoC should be small and low power because it is encapsulated in tiny air-tight capsules which are simultaneously inserted in the urinary bladder and rectum for several days. Since the SoC is also required to be programmable, we designed an Application Specific Instruction set Processor (ASIP) for pressure measurement and wireless communication, and implemented almost required functions on the ASIP. The SoC was fabricated using a 0.18µm CMOS mixed-signal process and the chip size is 2.5×2.5mm2. Evaluation results show that the power consumption of the SoC is 93.5µW, and that it can operate the capsule for seven days with a tiny battery.

A Fully Integrated Humidity Sensor System-on-Chip Fabricated by Micro-Stamping Technology

PubMed Central

Huang, Che-Wei; Huang, Yu-Jie; Lu, Shey-Shi; Lin, Chih-Ting

2012-01-01

A fully integrated humidity sensor chip was designed, implemented, and tested. Utilizing the micro-stamping technology, the pseudo-3D sensor system-on-chip (SSoC) architecture can be implemented by stacking sensing materials directly on the top of a CMOS-fabricated chip. The fabricated sensor system-on-chip (2.28 mm × 2.48 mm) integrated a humidity sensor, an interface circuit, a digital controller, and an On-Off Keying (OOK) wireless transceiver. With low power consumption, i.e., 750 μW without RF operation, the sensitivity of developed sensor chip was experimentally verified in the relative humidity (RH) range from 32% to 60%. The response time of the chip was also experimentally verified to be within 5 seconds from RH 36% to RH 64%. As a consequence, the implemented humidity SSoC paves the way toward the an ultra-small sensor system for various applications.

A 0.18 μm biosensor front-end based on 1/f noise, distortion cancelation and chopper stabilization techniques.

PubMed

Balasubramanian, Viswanathan; Ruedi, Pierre-Francois; Temiz, Yuksel; Ferretti, Anna; Guiducci, Carlotta; Enz

2013-10-01

This paper presents a novel sensor front-end circuit that addresses the issues of 1/f noise and distortion in a unique way by using canceling techniques. The proposed front-end is a fully differential transimpedance amplifier (TIA) targeted for current mode electrochemical biosensing applications. In this paper, we discuss the architecture of this canceling based front-end and the optimization methods followed for achieving low noise, low distortion performance at minimum current consumption are presented. To validate the employed canceling based front-end, it has been realized in a 0.18 μm CMOS process and the characterization results are presented. The front-end has also been tested as part of a complete wireless sensing system and the cyclic voltammetry (CV) test results from electrochemical sensors are provided. Overall current consumption in the front-end is 50 μA while operating on a 1.8 V supply.

A 300-mV 220-nW event-driven ADC with real-time QRS detection for wearable ECG sensors.

PubMed

Zhang, Xiaoyang; Lian, Yong

2014-12-01

This paper presents an ultra-low-power event-driven analog-to-digital converter (ADC) with real-time QRS detection for wearable electrocardiogram (ECG) sensors in wireless body sensor network (WBSN) applications. Two QRS detection algorithms, pulse-triggered (PUT) and time-assisted PUT (t-PUT), are proposed based on the level-crossing events generated from the ADC. The PUT detector achieves 97.63% sensitivity and 97.33% positive prediction in simulation on the MIT-BIH Arrhythmia Database. The t-PUT improves the sensitivity and positive prediction to 97.76% and 98.59% respectively. Fabricated in 0.13 μm CMOS technology, the ADC with QRS detector consumes only 220 nW measured under 300 mV power supply, making it the first nanoWatt compact analog-to-information (A2I) converter with embedded QRS detector.

A wireless sensor enabled by wireless power.

PubMed

Lee, Da-Sheng; Liu, Yu-Hong; Lin, Chii-Ruey

2012-11-22

Through harvesting energy by wireless charging and delivering data by wireless communication, this study proposes the concept of a wireless sensor enabled by wireless power (WPWS) and reports the fabrication of a prototype for functional tests. One WPWS node consists of wireless power module and sensor module with different chip-type sensors. Its main feature is the dual antenna structure. Following RFID system architecture, a power harvesting antenna was designed to gather power from a standard reader working in the 915 MHz band. Referring to the Modbus protocol, the other wireless communication antenna was integrated on a node to send sensor data in parallel. The dual antenna structure integrates both the advantages of an RFID system and a wireless sensor. Using a standard UHF RFID reader, WPWS can be enabled in a distributed area with a diameter up to 4 m. Working status is similar to that of a passive tag, except that a tag can only be queried statically, while the WPWS can send dynamic data from the sensors. The function is the same as a wireless sensor node. Different WPWSs equipped with temperature and humidity, optical and airflow velocity sensors are tested in this study. All sensors can send back detection data within 8 s. The accuracy is within 8% deviation compared with laboratory equipment. A wireless sensor network enabled by wireless power should be a totally wireless sensor network using WPWS. However, distributed WPWSs only can form a star topology, the simplest topology for constructing a sensor network. Because of shielding effects, it is difficult to apply other complex topologies. Despite this limitation, WPWS still can be used to extend sensor network applications in hazardous environments. Further research is needed to improve WPWS to realize a totally wireless sensor network.

A Wireless Sensor Enabled by Wireless Power

PubMed Central

Lee, Da-Sheng; Liu, Yu-Hong; Lin, Chii-Ruey

2012-01-01

Through harvesting energy by wireless charging and delivering data by wireless communication, this study proposes the concept of a wireless sensor enabled by wireless power (WPWS) and reports the fabrication of a prototype for functional tests. One WPWS node consists of wireless power module and sensor module with different chip-type sensors. Its main feature is the dual antenna structure. Following RFID system architecture, a power harvesting antenna was designed to gather power from a standard reader working in the 915 MHz band. Referring to the Modbus protocol, the other wireless communication antenna was integrated on a node to send sensor data in parallel. The dual antenna structure integrates both the advantages of an RFID system and a wireless sensor. Using a standard UHF RFID reader, WPWS can be enabled in a distributed area with a diameter up to 4 m. Working status is similar to that of a passive tag, except that a tag can only be queried statically, while the WPWS can send dynamic data from the sensors. The function is the same as a wireless sensor node. Different WPWSs equipped with temperature and humidity, optical and airflow velocity sensors are tested in this study. All sensors can send back detection data within 8 s. The accuracy is within 8% deviation compared with laboratory equipment. A wireless sensor network enabled by wireless power should be a totally wireless sensor network using WPWS. However, distributed WPWSs only can form a star topology, the simplest topology for constructing a sensor network. Because of shielding effects, it is difficult to apply other complex topologies. Despite this limitation, WPWS still can be used to extend sensor network applications in hazardous environments. Further research is needed to improve WPWS to realize a totally wireless sensor network. PMID:23443370

Insights into mountain precipitation and snowpack from a basin-scale wireless-sensor network

USDA-ARS?s Scientific Manuscript database

A spatially distributed wireless-sensor network, installed across the 2154 km2 portion of the 5311 km2 American River basin above 1500 m elevation, provided spatial measurements of temperature, relative humidity and snow depth. The network consisted of 10 sensor clusters, each with 10 measurement no...

Mask-less deposition of Au-SnO2 nanocomposites on CMOS MEMS platform for ethanol detection.

PubMed

Santra, S; Sinha, A K; De Luca, A; Ali, S Z; Udrea, F; Guha, P K; Ray, S K; Gardner, J W

2016-03-29

Here we report on the mask-less deposition of Au-SnO2 nanocomposites with a silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) micro electro mechanical system (MEMS) platform through the use of dip pen nanolithography (DPN) to create a low-cost ethanol sensor. MEMS technology is used in order to achieve low power consumption, by the employment of a membrane structure formed using deep reactive ion etching technique. The device consists of an embedded tungsten micro-heater with gold interdigitated electrodes on top of the SOI membrane. The tungsten micro-heater is used to raise the membrane temperature up to its operating temperature and the electrodes are used to measure the resistance of the nanocomposite sensing layer. The CMOS MEMS devices have high electro-thermal efficiency, with 8.2 °C temperature increase per mW power of consumption. The sensing material (Au-SnO2 nanocomposite) was synthesised starting from SnO nanoplates, then Au nanoparticles were attached chemically to the surface of SnO nanoplates, finally the mixture was heated at 700 °C in an oven in air for 4 h. This composite material was sonicated for 2 h in terpineol to make a viscous homogeneous slurry and then 'written' directly across the electrode area using the DPN technique without any mask. The devices were characterised by exposure to ethanol vapour in humid air in the concentration range of 100-1000 ppm. The sensitivity varied from 1.2 to 0.27 ppm(-1) for 100-1000 ppm of ethanol at 10% relative humid air. Selectivity measurements showed that the sensors were selective towards ethanol when they were exposed to acetone and toluene.

Mask-less deposition of Au-SnO2 nanocomposites on CMOS MEMS platform for ethanol detection

NASA Astrophysics Data System (ADS)

Santra, S.; Sinha, A. K.; De Luca, A.; Ali, S. Z.; Udrea, F.; Guha, P. K.; Ray, S. K.; Gardner, J. W.

2016-03-01

Here we report on the mask-less deposition of Au-SnO2 nanocomposites with a silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) micro electro mechanical system (MEMS) platform through the use of dip pen nanolithography (DPN) to create a low-cost ethanol sensor. MEMS technology is used in order to achieve low power consumption, by the employment of a membrane structure formed using deep reactive ion etching technique. The device consists of an embedded tungsten micro-heater with gold interdigitated electrodes on top of the SOI membrane. The tungsten micro-heater is used to raise the membrane temperature up to its operating temperature and the electrodes are used to measure the resistance of the nanocomposite sensing layer. The CMOS MEMS devices have high electro-thermal efficiency, with 8.2 °C temperature increase per mW power of consumption. The sensing material (Au-SnO2 nanocomposite) was synthesised starting from SnO nanoplates, then Au nanoparticles were attached chemically to the surface of SnO nanoplates, finally the mixture was heated at 700 °C in an oven in air for 4 h. This composite material was sonicated for 2 h in terpineol to make a viscous homogeneous slurry and then ‘written’ directly across the electrode area using the DPN technique without any mask. The devices were characterised by exposure to ethanol vapour in humid air in the concentration range of 100-1000 ppm. The sensitivity varied from 1.2 to 0.27 ppm-1 for 100-1000 ppm of ethanol at 10% relative humid air. Selectivity measurements showed that the sensors were selective towards ethanol when they were exposed to acetone and toluene.

Wireless ZigBee home automation system

NASA Astrophysics Data System (ADS)

Craciunescu, Razvan; Halunga, Simona; Fratu, Octavian

2015-02-01

The home automation system concept existed for many years but in the last decade, due to the rapid development of sensors and wireless technologies, a large number of various such "intelligent homes" have been developed. The purpose of the present paper is to demonstrate the flexibility, reliability and affordability of home automation projects, based on a simple and affordable implementation. A wireless sensing and control system have been developed and tested, having a number of basic functionalities such as switching on/off the light according to ambient lighting and turning on/off the central heating. The system has been built around low power microcontrollers and ZigBee modems for wireless communication, using a set of Vishay 640 thermistor sensors for temperature measurements and Vishay LDR07 photo-resistor for humidity measurements. A trigger is activated when the temperature or light measurements are above/below a given threshold and a command is transmitted to the central unit through the ZigBee radio module. All the data processing is performed by a low power microcontroller both at the sensing device and at the control unit.

Battery-free, wireless sensors for full-body pressure and temperature mapping

PubMed Central

Han, Seungyong; Kim, Jeonghyun; Won, Sang Min; Ma, Yinji; Kang, Daeshik; Xie, Zhaoqian; Lee, Kyu-Tae; Chung, Ha Uk; Banks, Anthony; Min, Seunghwan; Heo, Seung Yun; Davies, Charles R.; Lee, Jung Woo; Lee, Chi-Hwan; Kim, Bong Hoon; Li, Kan; Zhou, Yadong; Wei, Chen; Feng, Xue; Huang, Yonggang; Rogers, John A.

2018-01-01

Thin, soft, skin-like sensors capable of precise, continuous measurements of physiological health have broad potential relevance to clinical health care. Use of sensors distributed over a wide area for full-body, spatiotemporal mapping of physiological processes would be a considerable advance for this field. We introduce materials, device designs, wireless power delivery and communication strategies, and overall system architectures for skin-like, battery-free sensors of temperature and pressure that can be used across the entire body. Combined experimental and theoretical investigations of the sensor operation and the modes for wireless addressing define the key features of these systems. Studies with human subjects in clinical sleep laboratories and in adjustable hospital beds demonstrate functionality of the sensors, with potential implications for monitoring of circadian cycles and mitigating risks for pressure-induced skin ulcers. PMID:29618561

Integrated CMOS dew point sensors for relative humidity measurement

NASA Astrophysics Data System (ADS)

Savalli, Nicolo; Baglio, Salvatore; Castorina, Salvatore; Sacco, Vincenzo; Tringali, Cristina

2004-07-01

This work deals with the development of integrated relative humidity dew point sensors realized by adopting standard CMOS technology for applications in various fields. The proposed system is composed by a suspended plate that is cooled by exploiting integrated Peltier cells. The cold junctions of the cells have been spread over the plate surface to improve the homogeneity of the temperature distribution over its surface, where cooling will cause the water condensation. The temperature at which water drops occur, named dew point temperature, is a function of the air humidity. Measurement of such dew point temperature and the ambient temperature allows to know the relative humidity. The detection of water drops is achieved by adopting a capacitive sensing strategy realized by interdigited fixed combs, composed by the upper layer of the adopted process. Such a capacitive sensor, together with its conditioning circuit, drives a trigger that stops the cooling of the plate and enables the reading of the dew point temperature. Temperature measurements are achieved by means of suitably integrated thermocouples. The analytical model of the proposed system has been developed and has been used to design a prototype device and to estimate its performances. In such a prototype, the thermoelectric cooler is composed by 56 Peltier cells, made by metal 1/poly 1 junctions. The plate has a square shape with 200 μm side, and it is realized by exploiting the oxide layers. Starting from the ambient temperature a temperature variation of ΔT = 15 K can be reached in 10 ms thus allowing to measure a relative humidity greater than 40%.

[Microstrip antenna design and system research of radio frequency identification temperature sensor].

PubMed

Yang, Hao; Yang, Xiaohe; Chen, Yuquan; Pan, Min

2008-12-01

Radio frequency identification sensor network, which is a product of integrating radio frequency identification (RFID) with wireless sensor network (WSN), is introduced in this paper. The principle of radio frequency identification sensor is analyzed, and the importance of the antenna is emphasized. Then three kinds of common antennae, namely coil antenna, dipole antenna and microstrip antenna, are discussed. Subsequently, according to requirement, we have designed a microstrip antenna in a wireless temperature-monitoring and controlling system. The measurement of factual effect showed the requirement was fulfilled.

[Development of wireless monitoring system based on Zigbee technology in blood and bacterin cold chain].

PubMed

Zhao, Peng; Sun, Jian-Jun; Wu, Tai-Hu

2008-11-01

Real-time monitoring for temperature is required in cold chain for the medical products that are sensible with temperature, such as blood and bacterin, to guarantee the quality and reduce their wastage. This wireless monitoring system in cold chain is developed with Zigbee technology. Functions such as real-time monitoring, analyzing, alarming are realized. The system boasts such characteristics as low power consumption, low cost, big capacity and high reliability, and could improve the capability of real-time monitoring and management in cold chain effectively.

Low-cost compact thermal imaging sensors for body temperature measurement

NASA Astrophysics Data System (ADS)

Han, Myung-Soo; Han, Seok Man; Kim, Hyo Jin; Shin, Jae Chul; Ahn, Mi Sook; Kim, Hyung Won; Han, Yong Hee

2013-06-01

This paper presents a 32x32 microbolometer thermal imaging sensor for human body temperature measurement. Waferlevel vacuum packaging technology allows us to get a low cost and compact imaging sensor chip. The microbolometer uses V-W-O film as sensing material and ROIC has been designed 0.35-um CMOS process in UMC. A thermal image of a human face and a hand using f/1 lens convinces that it has a potential of human body temperature for commercial use.

Smart Multi-Level Tool for Remote Patient Monitoring Based on a Wireless Sensor Network and Mobile Augmented Reality

PubMed Central

González, Fernando Cornelio Jimènez; Villegas, Osslan Osiris Vergara; Ramírez, Dulce Esperanza Torres; Sánchez, Vianey Guadalupe Cruz; Domínguez, Humberto Ochoa

2014-01-01

Technological innovations in the field of disease prevention and maintenance of patient health have enabled the evolution of fields such as monitoring systems. One of the main advances is the development of real-time monitors that use intelligent and wireless communication technology. In this paper, a system is presented for the remote monitoring of the body temperature and heart rate of a patient by means of a wireless sensor network (WSN) and mobile augmented reality (MAR). The combination of a WSN and MAR provides a novel alternative to remotely measure body temperature and heart rate in real time during patient care. The system is composed of (1) hardware such as Arduino microcontrollers (in the patient nodes), personal computers (for the nurse server), smartphones (for the mobile nurse monitor and the virtual patient file) and sensors (to measure body temperature and heart rate), (2) a network layer using WiFly technology, and (3) software such as LabView, Android SDK, and DroidAR. The results obtained from tests show that the system can perform effectively within a range of 20 m and requires ten minutes to stabilize the temperature sensor to detect hyperthermia, hypothermia or normal body temperature conditions. Additionally, the heart rate sensor can detect conditions of tachycardia and bradycardia. PMID:25230306

Smart multi-level tool for remote patient monitoring based on a wireless sensor network and mobile augmented reality.

PubMed

González, Fernando Cornelio Jiménez; Villegas, Osslan Osiris Vergara; Ramírez, Dulce Esperanza Torres; Sánchez, Vianey Guadalupe Cruz; Domínguez, Humberto Ochoa

2014-09-16

Technological innovations in the field of disease prevention and maintenance of patient health have enabled the evolution of fields such as monitoring systems. One of the main advances is the development of real-time monitors that use intelligent and wireless communication technology. In this paper, a system is presented for the remote monitoring of the body temperature and heart rate of a patient by means of a wireless sensor network (WSN) and mobile augmented reality (MAR). The combination of a WSN and MAR provides a novel alternative to remotely measure body temperature and heart rate in real time during patient care. The system is composed of (1) hardware such as Arduino microcontrollers (in the patient nodes), personal computers (for the nurse server), smartphones (for the mobile nurse monitor and the virtual patient file) and sensors (to measure body temperature and heart rate), (2) a network layer using WiFly technology, and (3) software such as LabView, Android SDK, and DroidAR. The results obtained from tests show that the system can perform effectively within a range of 20 m and requires ten minutes to stabilize the temperature sensor to detect hyperthermia, hypothermia or normal body temperature conditions. Additionally, the heart rate sensor can detect conditions of tachycardia and bradycardia.

Low-temperature crack-free Si3N4 nonlinear photonic circuits for CMOS-compatible optoelectronic co-integration

NASA Astrophysics Data System (ADS)

Casale, Marco; Kerdiles, Sebastien; Brianceau, Pierre; Hugues, Vincent; El Dirani, Houssein; Sciancalepore, Corrado

2017-02-01

In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing ( 1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs).

An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

2017-06-01

Solid source diffusions of phosphorus (P) and boron (B) into the half-inch (12.5 mm) minimal silicon (Si) wafers by spin on dopants (SOD) have been systematically investigated and the physical-vapor-deposited (PVD) titanium nitride (TiN) metal gate minimal silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have successfully been fabricated using the developed SOD thermal diffusion technique. It was experimentally confirmed that a low temperature oxidation (LTO) process which depresses a boron silicide layer formation is effective way to remove boron-glass in a diluted hydrofluoric acid (DHF) solution. It was also found that top Si layer thickness of SOI wafers is reduced in the SOD thermal diffusion process because of its consumption by thermal oxidation owing to the oxygen atoms included in SOD films, which should be carefully considered in the ultrathin SOI device fabrication. Moreover, normal operations of the fabricated minimal PVD-TiN metal gate SOI-CMOS inverters, static random access memory (SRAM) cells and ring oscillators have been demonstrated. These circuit level results indicate that no remarkable particles and interface traps were introduced onto the minimal wafers during the device fabrication, and the developed solid source diffusion by SOD is useful for the fabrication of functional logic gate minimal SOI-CMOS integrated circuits.

Design, development, fabrication and delivery of register and multiplexer units. [CMOS monolithic chip development

NASA Technical Reports Server (NTRS)

Feller, A.; Lombardi, T.

1978-01-01

Several approaches for implementing the register and multiplexer unit into two CMOS monolithic chip types were evaluated. The CMOS standard cell array technique was selected and implemented. Using this design automation technology, two LSI CMOS arrays were designed, fabricated, packaged, and tested for proper static, functional, and dynamic operation. One of the chip types, multiplexer register type 1, is fabricated on a 0.143 x 0.123 inch chip. It uses nine standard cell types for a total of 54 standard cells. This involves more than 350 transistors and has the functional equivalent of 111 gates. The second chip, multiplexer register type 2, is housed on a 0.12 x 0.12 inch die. It uses 13 standard cell types, for a total of 42 standard cells. It contains more than 300 transistors, the functional equivalent of 112 gates. All of the hermetically sealed units were initially screened for proper functional operation. The static leakage and the dynamic leakage were measured. Dynamic measurements were made and recorded. At 10 V, 14 megabit shifting rates were measured on multiplexer register type 1. At 5 V these units shifted data at a 6.6 MHz rate. The units were designed to operate over the 3 to 15 V operating range and over a temperature range of -55 to 125 C.

Energy Neutral Wireless Bolt for Safety Critical Fastening

PubMed Central

Seyoum, Biruk B.

2017-01-01

Thermoelectric generators (TEGs) are now capable of powering the abundant low power electronics from very small (just a few degrees Celsius) temperature gradients. This factor along with the continuously lowering cost and size of TEGs, has contributed to the growing number of miniaturized battery-free sensor modules powered by TEGs. In this article, we present the design of an ambient-powered wireless bolt for high-end electro-mechanical systems. The bolt is equipped with a temperature sensor and a low power RF chip powered from a TEG. A DC-DC converter interfacing the TEG with the RF chip is used to step-up the low TEG voltage. The work includes the characterizations of different TEGs and DC-DC converters to determine the optimal design based on the amount of power that can be generated from a TEG under different loads and at temperature gradients typical of industrial environments. A prototype system was implemented and the power consumption of this system under different conditions was also measured. Results demonstrate that the power generated by the TEG at very low temperature gradients is sufficient to guarantee continuous wireless monitoring of the critical fasteners in critical systems such as avionics, motorsport and aerospace. PMID:28954432

Energy Neutral Wireless Bolt for Safety Critical Fastening.

PubMed

Seyoum, Biruk B; Rossi, Maurizio; Brunelli, Davide

2017-09-26

Thermoelectric generators (TEGs) are now capable of powering the abundant low power electronics from very small (just a few degrees Celsius) temperature gradients. This factor along with the continuously lowering cost and size of TEGs, has contributed to the growing number of miniaturized battery-free sensor modules powered by TEGs. In this article, we present the design of an ambient-powered wireless bolt for high-end electro-mechanical systems. The bolt is equipped with a temperature sensor and a low power RF chip powered from a TEG. A DC-DC converter interfacing the TEG with the RF chip is used to step-up the low TEG voltage. The work includes the characterizations of different TEGs and DC-DC converters to determine the optimal design based on the amount of power that can be generated from a TEG under different loads and at temperature gradients typical of industrial environments. A prototype system was implemented and the power consumption of this system under different conditions was also measured. Results demonstrate that the power generated by the TEG at very low temperature gradients is sufficient to guarantee continuous wireless monitoring of the critical fasteners in critical systems such as avionics, motorsport and aerospace.

Maximum Temperature Detection System for Integrated Circuits

NASA Astrophysics Data System (ADS)

Frankiewicz, Maciej; Kos, Andrzej

2015-03-01

The paper describes structure and measurement results of the system detecting present maximum temperature on the surface of an integrated circuit. The system consists of the set of proportional to absolute temperature sensors, temperature processing path and a digital part designed in VHDL. Analogue parts of the circuit where designed with full-custom technique. The system is a part of temperature-controlled oscillator circuit - a power management system based on dynamic frequency scaling method. The oscillator cooperates with microprocessor dedicated for thermal experiments. The whole system is implemented in UMC CMOS 0.18 μm (1.8 V) technology.

Wireless sensor platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Pooran C.; Killough, Stephen M.; Kuruganti, Phani Teja

A wireless sensor platform and methods of manufacture are provided. The platform involves providing a plurality of wireless sensors, where each of the sensors is fabricated on flexible substrates using printing techniques and low temperature curing. Each of the sensors can include planar sensor elements and planar antennas defined using the printing and curing. Further, each of the sensors can include a communications system configured to encode the data from the sensors into a spread spectrum code sequence that is transmitted to a central computer(s) for use in monitoring an area associated with the sensors.

The Application of Wireless Sensor Networks in Management of Orchard

NASA Astrophysics Data System (ADS)

Zhu, Guizhi

A monitoring system based on wireless sensor network is established, aiming at the difficulty of information acquisition in the orchard on the hill at present. The temperature and humidity sensors are deployed around fruit trees to gather the real-time environmental parameters, and the wireless communication modules with self-organized form, which transmit the data to a remote central server, can realize the function of monitoring. By setting the parameters of data intelligent analysis judgment, the information on remote diagnosis and decision support can be timely and effectively feed back to users.

Controlling the spectrum of photons generated on a silicon nanophotonic chip

PubMed Central

Kumar, Ranjeet; Ong, Jun Rong; Savanier, Marc; Mookherjea, Shayan

2014-01-01

Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range. PMID:25410792

Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters.

PubMed

Xu, Qiqi; Zhao, Jianwen; Pecunia, Vincenzo; Xu, Wenya; Zhou, Chunshan; Dou, Junyan; Gu, Weibing; Lin, Jian; Mo, Lixin; Zhao, Yanfei; Cui, Zheng

2017-04-12

The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 10 6 , effective mobility up to 30 cm 2 V -1 s -1 , small hysteresis, and small subthreshold swing (90-140 mV dec -1 ), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 V dd = 1 V) and a voltage gain as high as 30 (at V dd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 μW at V dd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.

High Temperature Wireless Communication And Electronics For Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Beheim, G. M.; Ponchak, G. E.; Chen, L.-Y

2007-01-01

In order for future aerospace propulsion systems to meet the increasing requirements for decreased maintenance, improved capability, and increased safety, the inclusion of intelligence into the propulsion system design and operation becomes necessary. These propulsion systems will have to incorporate technology that will monitor propulsion component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This implies the development of sensors, actuators, and electronics, with associated packaging, that will be able to operate under the harsh environments present in an engine. However, given the harsh environments inherent in propulsion systems, the development of engine-compatible electronics and sensors is not straightforward. The ability of a sensor system to operate in a given environment often depends as much on the technologies supporting the sensor element as the element itself. If the supporting technology cannot handle the application, then no matter how good the sensor is itself, the sensor system will fail. An example is high temperature environments where supporting technologies are often not capable of operation in engine conditions. Further, for every sensor going into an engine environment, i.e., for every new piece of hardware that improves the in-situ intelligence of the components, communication wires almost always must follow. The communication wires may be within or between parts, or from the engine to the controller. As more hardware is added, more wires, weight, complexity, and potential for unreliability is also introduced. Thus, wireless communication combined with in-situ processing of data would significantly improve the ability to include sensors into high temperature systems and thus lead toward more intelligent engine systems. NASA Glenn Research Center (GRC) is presently leading the development of electronics, communication systems, and sensors capable of prolonged stable operation in harsh 500C environments. This has included world record operation of SiC-based transistor technology (including packaging) that has demonstrated continuous electrical operation at 500C for over 2000 hours. Based on SiC electronics, development of high temperature wireless communication has been on-going. This work has concentrated on maturing the SiC electronic devices for communication purposes as well as the passive components such as resistors and capacitors needed to enable a high temperature wireless system. The objective is to eliminate wires associated with high temperature sensors which add weight to a vehicle and can be a cause of sensor unreliability. This paper discusses the development of SiC based electronics and wireless communications technology for harsh environment applications such as propulsion health management systems and in Venus missions. A brief overview of the future directions in sensor technology is given including maturing of near-room temperature "Lick and Stick" leak sensor technology for possible implementation in the Crew Launch Vehicle program. Then an overview of high temperature electronics and the development of high temperature communication systems is presented. The maturity of related technologies such as sensor and packaging will also be discussed. It is concluded that a significant component of efforts to improve the intelligence of harsh environment operating systems is the development and implementation of high temperature wireless technology

Annual Conference on Nuclear and Space Radiation Effects, 14th, College of William and Mary, Williamsburg, Va., July 12-15, 1977, Proceedings

NASA Technical Reports Server (NTRS)

Stahl, R. H.

1977-01-01

Topics related to processing and hardness assurance are considered, taking into account the radiation hardening of CMOS technologies, technological advances in the manufacture of radiation-hardened CMOS integrated circuits, CMOS hardness assurance through process controls and optimized design procedures, the application of operational amplifiers to hardened systems, a hard off-the-shelf SG1524 pulse width modulator, and the gamma-induced voltage breakdown anomaly in a Schottky diode. Basic mechanisms are examined, giving attention to chemical and structural aspects of the irradiation behavior of SiO2 films on silicon, experimental observations of the chemistry of the SiO2/Si interface, leakage current phenomena in irradiated SOS devices, the avalanche injection of holes into SiO2, the low-temperature radiation response of Al2O3 gate insulators, and neutron damage mechanisms in silicon at 10 K. Other subjects discussed are related to radiation effects in devices and circuits, space radiation effects, and aspects of simulation, energy deposition, and dosimetry.

Fabrication and Characterization of a CMOS-MEMS Humidity Sensor.

PubMed

Dennis, John-Ojur; Ahmed, Abdelaziz-Yousif; Khir, Mohd-Haris

2015-07-10

This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the purpose of relative humidity measurement. The sensing principle is based on the change in amplitude of the device due to adsorption or desorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changes in the mass of the device. The sensor has been designed and fabricated through a standard 0.35 µm CMOS process technology and post-CMOS micromachining technique has been successfully implemented to release the MEMS structures. The sensor is operated in the dynamic mode using electrothermal actuation and the output signal measured using a piezoresistive (PZR) sensor connected in a Wheatstone bridge circuit. The output voltage of the humidity sensor increases from 0.585 mV to 30.580 mV as the humidity increases from 35% RH to 95% RH. The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH. On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%. The sensitivity is also frequency dependent, increasing from 0.500 mV/% RH at 2 Hz to reach a maximum value of 1.634 mV/% RH at a frequency of 12 Hz, then decreasing to 1.110 mV/% RH at a frequency of 20 Hz. Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.

Fabrication and Characterization of a CMOS-MEMS Humidity Sensor

PubMed Central

Dennis, John-Ojur; Ahmed, Abdelaziz-Yousif; Khir, Mohd-Haris

2015-01-01

This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the purpose of relative humidity measurement. The sensing principle is based on the change in amplitude of the device due to adsorption or desorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changes in the mass of the device. The sensor has been designed and fabricated through a standard 0.35 µm CMOS process technology and post-CMOS micromachining technique has been successfully implemented to release the MEMS structures. The sensor is operated in the dynamic mode using electrothermal actuation and the output signal measured using a piezoresistive (PZR) sensor connected in a Wheatstone bridge circuit. The output voltage of the humidity sensor increases from 0.585 mV to 30.580 mV as the humidity increases from 35% RH to 95% RH. The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH. On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%. The sensitivity is also frequency dependent, increasing from 0.500 mV/% RH at 2 Hz to reach a maximum value of 1.634 mV/% RH at a frequency of 12 Hz, then decreasing to 1.110 mV/% RH at a frequency of 20 Hz. Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH. PMID:26184204

Millimeter Wave Spectroscopy in a Semi-Confocal Fabry-Perot Cavity

NASA Astrophysics Data System (ADS)

Drouin, Brian; Tang, Adrian; Reck, Theodore J.; Nemchick, Deacon J.; Cich, Matthew J.; Crawford, Timothy J.; Raymond, Alexander W.; Chang, M.-C. Frank; Kim, Rod M.

2017-06-01

A new generation of CMOS circuits operating at 89-104 GHz with improved output power and pulse switch isolation have enhanced the performance of the miniaturized pulsed-echo Fourier transform spectrometer under development for planetary exploration at the Jet Propulsion laboratory. Additional progress has been made by creating a waveguide-fed structure for the novel planar coupler design. This structure has enabled characterization of each component in the system and enabled spectroscopy to be done with conventional millimeter hardware that enables (1) direct comparisons to the CMOS components, (2) enhanced bandwidth of 74-109 GHz, and (3) amplification of the transmitter prior to cavity injection. We have now demonstrated the technique with room temperature detections on multiple species including N_2O, OCS, CH_3CN, CH_3OH, CH_3NH_2, CH_3CHO, CH_3Cl, HDO, D_2O, CH_3CH_2CN and CH_3CH_2OH. Of particular interest to spectroscopic work in the millimeter range is the ongoing incorporation of a ΔΣ radio-frequency source into the millimeter-wave lock-loop - this has improved the phase-noise of the tunable CMOS transceiver to better than the room-temperature Doppler limit and provides a promising source for general use that may replace the high end microwave synthesizers. We are in the process of building a functional interface to the various subsystems. We will present a trade-space study to determine the optimal operating conditions of the pulse-echo system.

On the relevance of using open wireless sensor networks in environment monitoring.

PubMed

Bagula, Antoine B; Inggs, Gordon; Scott, Simon; Zennaro, Marco

2009-01-01

This paper revisits the problem of the readiness for field deployments of wireless sensor networks by assessing the relevance of using Open Hardware and Software motes for environment monitoring. We propose a new prototype wireless sensor network that fine-tunes SquidBee motes to improve the life-time and sensing performance of an environment monitoring system that measures temperature, humidity and luminosity. Building upon two outdoor sensing scenarios, we evaluate the performance of the newly proposed energy-aware prototype solution in terms of link quality when expressed by the Received Signal Strength, Packet Loss and the battery lifetime. The experimental results reveal the relevance of using the Open Hardware and Software motes when setting up outdoor wireless sensor networks.

Remote multi-function fire alarm system based on internet of things

NASA Astrophysics Data System (ADS)

Wang, Lihui; Zhao, Shuai; Huang, Jianqing; Ji, Jianyu

2018-05-01

This project uses MCU STC15W408AS (stable, energy saving, high speed), temperature sensor DS18B20 (cheap, high efficiency, stable), MQ2 resistance type semiconductor smog sensor (high stability, fast response and economy) and NRF24L01 wireless transmitting and receiving module (energy saving, small volume, reliable) as the main body to achieve concentration temperature data presentation, intelligent voice alarming and short distance wireless transmission. The whole system is safe, reliable, cheap, quick reaction and good performance. This project uses the MCU STM32F103RCT6 as the main control chip, and use WIFI module ESP8266, wireless module NRF24L01 to make the gateway. Users can remotely check and control the related devices in real-time on smartphones or computers. We can also realize the functions of intelligent fire monitoring, remote fire extinguishing, cloud data storage through the third party server Big IOT.

Measurement of agricultural parameters using wireless sensor network (WSN)

NASA Astrophysics Data System (ADS)

Guaña-Moya, Javier; Sánchez-Almeida, Tarquino; Salgado-Reyes, Nelson

2018-04-01

The technological advances have allowed to create new applications in telecommunications, applying low power and reduced costs in their equipment, thus achieving the evolution of new wireless networks or also denominated Wireless Sensor Network. These technologies allow the generation of measurements and analysis of environmental parameter data and soil. Precision agriculture requires parameters for the improvement of production, obtained through WSN technologies. This research analyzes the climatic requirements and soil parameters in a rose plantation in a greenhouse at an altitude of 3,100 meters above sea level. In the present investigation, maximum parameters were obtained in the production of roses, which are in the optimum range of production, whereas the minimum parameters of temperature, humidity and luminosity, evidenced that these parameters can damage the plants, since temperatures less than 10 °C slow down the growth of the plant and allow the proliferation of diseases and fungi.

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Autonomous chemical and biological miniature wireless-sensor

NASA Astrophysics Data System (ADS)

Goldberg, Bar-Giora

2005-05-01

The presentation discusses a new concept and a paradigm shift in biological, chemical and explosive sensor system design and deployment. From large, heavy, centralized and expensive systems to distributed wireless sensor networks utilizing miniature platforms (nodes) that are lightweight, low cost and wirelessly connected. These new systems are possible due to the emergence and convergence of new innovative radio, imaging, networking and sensor technologies. Miniature integrated radio-sensor networks, is a technology whose time has come. These network systems are based on large numbers of distributed low cost and short-range wireless platforms that sense and process their environment and communicate data thru a network to a command center. The recent emergence of chemical and explosive sensor technology based on silicon nanostructures, coupled with the fast evolution of low-cost CMOS imagers, low power DSP engines and integrated radio chips, has created an opportunity to realize the vision of autonomous wireless networks. These threat detection networks will perform sophisticated analysis at the sensor node and convey alarm information up the command chain. Sensor networks of this type are expected to revolutionize the ability to detect and locate biological, chemical, or explosive threats. The ability to distribute large numbers of low-cost sensors over large areas enables these devices to be close to the targeted threats and therefore improve detection efficiencies and enable rapid counter responses. These sensor networks will be used for homeland security, shipping container monitoring, and other applications such as laboratory medical analysis, drug discovery, automotive, environmental and/or in-vivo monitoring. Avaak"s system concept is to image a chromatic biological, chemical and/or explosive sensor utilizing a digital imager, analyze the images and distribute alarm or image data wirelessly through the network. All the imaging, processing and communications would take place within the miniature, low cost distributed sensor platforms. This concept however presents a significant challenge due to a combination and convergence of required new technologies, as mentioned above. Passive biological and chemical sensors with very high sensitivity and which require no assaying are in development using a technique to optically and chemically encode silicon wafers with tailored nanostructures. The silicon wafer is patterned with nano-structures designed to change colors ad patterns when exposed to the target analytes (TICs, TIMs, VOC). A small video camera detects the color and pattern changes on the sensor. To determine if an alarm condition is present, an on board DSP processor, using specialized image processing algorithms and statistical analysis, determines if color gradient changes occurred on the sensor array. These sensors can detect several agents simultaneously. This system is currently under development by Avaak, with funding from DARPA through an SBIR grant.

Wireless sensor networks for canopy temperature sensing and irrigation management

USDA-ARS?s Scientific Manuscript database

For researchers, canopy temperature measurements have proven useful in characterizing crop water stress and developing protocols for irrigation management. Today, there is heightened interest in using remote canopy temperature measurements for real-time irrigation scheduling. However, without the us...

Variable self-powered light detection CMOS chip with real-time adaptive tracking digital output based on a novel on-chip sensor.

PubMed

Wang, HongYi; Fan, Youyou; Lu, Zhijian; Luo, Tao; Fu, Houqiang; Song, Hongjiang; Zhao, Yuji; Christen, Jennifer Blain

2017-10-02

This paper provides a solution for a self-powered light direction detection with digitized output. Light direction sensors, energy harvesting photodiodes, real-time adaptive tracking digital output unit and other necessary circuits are integrated on a single chip based on a standard 0.18 µm CMOS process. Light direction sensors proposed have an accuracy of 1.8 degree over a 120 degree range. In order to improve the accuracy, a compensation circuit is presented for photodiodes' forward currents. The actual measurement precision of output is approximately 7 ENOB. Besides that, an adaptive under voltage protection circuit is designed for variable supply power which may undulate with temperature and process.

SEE Sensitivity Analysis of 180 nm NAND CMOS Logic Cell for Space Applications

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

2016-07-01

This paper focus on Single Event Effects caused by energetic particle strike on sensitive locations in CMOS NAND logic cell designed in 180nm technology node to be operated in space radiation environment. The generation of SE transients as well as upsets as function of LET of incident particle has been determined for logic devices onboard LEO and GEO satellites. The minimum magnitude pulse and pulse-width for threshold LET was determined to estimate the vulnerability /susceptibility of device for heavy ion strike. The impact of temperature, strike location and logic state of NAND circuit on total SEU/SET rate was estimated with physical mechanism simulations using Visual TCAD, Genius, runSEU program and Crad computer codes.

Prediction and measurement results of radiation damage to CMOS devices on board spacecraft

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Danchenko, V.; Cliff, R. A.; Sing, M.; Brucker, G. J.; Ohanian, R. S.

1977-01-01

Final results from the CMOS Radiation Effects Measurement (CREM) experiment flown on Explorer 55 are presented and discussed, based on about 15 months of observations and measurements. Conclusions are given relating to long-range annealing, effects of operating temperature on semiconductor performance in space, biased and unbiased P-MOS device degradation, unbiased n-channel device performance, changes in device transconductance, and the difference in ionization efficiency between Co-60 gamma rays and 1-Mev Van de Graaff electrons. The performance of devices in a heavily shielded electronic subsystem box within the spacecraft is evaluated and compared. Environment models and computational methods and their impact on device-degradation estimates are being reviewed to determine whether they permit cost-effective design of spacecraft.

Wireless remote weather monitoring system based on MEMS technologies.

PubMed

Ma, Rong-Hua; Wang, Yu-Hsiang; Lee, Chia-Yen

2011-01-01

This study proposes a wireless remote weather monitoring system based on Micro-Electro-Mechanical Systems (MEMS) and wireless sensor network (WSN) technologies comprising sensors for the measurement of temperature, humidity, pressure, wind speed and direction, integrated on a single chip. The sensing signals are transmitted between the Octopus II-A sensor nodes using WSN technology, following amplification and analog/digital conversion (ADC). Experimental results show that the resistance of the micro temperature sensor increases linearly with input temperature, with an average TCR (temperature coefficient of resistance) value of 8.2 × 10(-4) (°C(-1)). The resistance of the pressure sensor also increases linearly with air pressure, with an average sensitivity value of 3.5 × 10(-2) (Ω/kPa). The sensitivity to humidity increases with ambient temperature due to the effect of temperature on the dielectric constant, which was determined to be 16.9, 21.4, 27.0, and 38.2 (pF/%RH) at 27 °C, 30 °C, 40 °C, and 50 °C, respectively. The velocity of airflow is obtained by summing the variations in resistor response as airflow passed over the sensors providing sensitivity of 4.2 × 10(-2), 9.2 × 10(-2), 9.7 × 10(-2) (Ω/ms(-1)) with power consumption by the heating resistor of 0.2, 0.3, and 0.5 W, respectively. The passage of air across the surface of the flow sensors prompts variations in temperature among each of the sensing resistors. Evaluating these variations in resistance caused by the temperature change enables the measurement of wind direction.

Phase Interrogation Used for a Wireless Passive Pressure Sensor in an 800 °C High-Temperature Environment

PubMed Central

Zhang, Huixin; Hong, Yingping; Liang, Ting; Zhang, Hairui; Tan, Qiulin; Xue, Chenyang; Liu, Jun; Zhang, Wendong; Xiong, Jijun

2015-01-01

A wireless passive pressure measurement system for an 800 °C high-temperature environment is proposed and the impedance variation caused by the mutual coupling between a read antenna and a LC resonant sensor is analyzed. The system consists of a ceramic-based LC resonant sensor, a readout device for impedance phase interrogation, heat insulating material, and a composite temperature-pressure test platform. Performances of the pressure sensor are measured by the measurement system sufficiently, including pressure sensitivity at room temperature, zero drift from room temperature to 800 °C, and the pressure sensitivity under the 800 °C high temperature environment. The results show that the linearity of sensor is 0.93%, the repeatability is 6.6%, the hysteretic error is 1.67%, and the sensor sensitivity is 374 KHz/bar. The proposed measurement system, with high engineering value, demonstrates good pressure sensing performance in a high temperature environment. PMID:25690546

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

NASA Astrophysics Data System (ADS)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

Fundamental performance differences of CMOS and CCD imagers: part V

NASA Astrophysics Data System (ADS)

Janesick, James R.; Elliott, Tom; Andrews, James; Tower, John; Pinter, Jeff

2013-02-01

Previous papers delivered over the last decade have documented developmental progress made on large pixel scientific CMOS imagers that match or surpass CCD performance. New data and discussions presented in this paper include: 1) a new buried channel CCD fabricated on a CMOS process line, 2) new data products generated by high performance custom scientific CMOS 4T/5T/6T PPD pixel imagers, 3) ultimate CTE and speed limits for large pixel CMOS imagers, 4) fabrication and test results of a flight 4k x 4k CMOS imager for NRL's SoloHi Solar Orbiter Mission, 5) a progress report on ultra large stitched Mk x Nk CMOS imager, 6) data generated by on-chip sub-electron CDS signal chain circuitry used in our imagers, 7) CMOS and CMOSCCD proton and electron radiation damage data for dose levels up to 10 Mrd, 8) discussions and data for a new class of PMOS pixel CMOS imagers and 9) future CMOS development work planned.

Link-quality measurement and reporting in wireless sensor networks.

PubMed

Chehri, Abdellah; Jeon, Gwanggil; Choi, Byoungjo

2013-03-04

Wireless Sensor networks (WSNs) are created by small hardware devices that possess the necessary functionalities to measure and exchange a variety of environmental data in their deployment setting. In this paper, we discuss the experiments in deploying a testbed as a first step towards creating a fully functional heterogeneous wireless network-based underground monitoring system. The system is mainly composed of mobile and static ZigBee nodes, which are deployed on the underground mine galleries for measuring ambient temperature. In addition, we describe the measured results of link characteristics such as received signal strength, latency and throughput for different scenarios.

Link-Quality Measurement and Reporting in Wireless Sensor Networks

PubMed Central

Chehri, Abdellah; Jeon, Gwanggil; Choi, Byoungjo

2013-01-01

Wireless Sensor networks (WSNs) are created by small hardware devices that possess the necessary functionalities to measure and exchange a variety of environmental data in their deployment setting. In this paper, we discuss the experiments in deploying a testbed as a first step towards creating a fully functional heterogeneous wireless network-based underground monitoring system. The system is mainly composed of mobile and static ZigBee nodes, which are deployed on the underground mine galleries for measuring ambient temperature. In addition, we describe the measured results of link characteristics such as received signal strength, latency and throughput for different scenarios. PMID:23459389

High temperature energy harvesters utilizing ALN/3C-SiC composite diaphragms

NASA Astrophysics Data System (ADS)

Lai, Yun-Ju; Li, Wei-Chang; Felmetsger, Valery V.; Senesky, Debbie G.; Pisano, Albert P.

2014-06-01

Microelectromechanical systems (MEMS) energy harvesting devices aiming at powering wireless sensor systems for structural health monitoring in harsh environments are presented. For harsh environment wireless sensor systems, sensor modules are required to operate at elevated temperatures (> 250°C) with capabilities to resist harsh chemical conditions, thereby the use of battery-based power sources becomes challenging and not economically efficient if considering the required maintenance efforts. To address this issue, energy harvesting technology is proposed to replace batteries and provide a sustainable power source for the sensor systems towards autonomous harsh environment wireless sensor networks. In particular, this work demonstrates a micromachined aluminum nitride/cubic silicon carbide (AlN/3C-SiC) composite diaphragm energy harvester, which enables high temperature energy harvesting from ambient pulsed pressure sources. The fabricated device yields an output power density of 87 μW/cm2 under 1.48-psi pressure pulses at 1 kHz while connected to a 14.6-kΩ load resistor. The effects of pulse profile on output voltage have been studied, showing that the output voltage can be maximized by optimizing the diaphragm resonance frequency based on specific pulse characteristics. In addition, temperature dependence of the diaphragm resonance frequency over the range of 20°C to 600°C has been investigated and the device operation at temperatures as high as 600°C has been verified.

Description of a Portable Wireless Device for High-Frequency Body Temperature Acquisition and Analysis

PubMed Central

Cuesta-Frau, David; Varela, Manuel; Aboy, Mateo; Miró-Martínez, Pau

2009-01-01

We describe a device for dual channel body temperature monitoring. The device can operate as a real time monitor or as a data logger, and has Bluetooth capabilities to enable for wireless data download to the computer used for data analysis. The proposed device is capable of sampling temperature at a rate of 1 sample per minute with a resolution of 0.01 °C . The internal memory allows for stand-alone data logging of up to 10 days. The device has a battery life of 50 hours in continuous real-time mode. In addition to describing the proposed device in detail, we report the results of a statistical analysis conducted to assess its accuracy and reproducibility. PMID:22408473

Description of a portable wireless device for high-frequency body temperature acquisition and analysis.

PubMed

Cuesta-Frau, David; Varela, Manuel; Aboy, Mateo; Miró-Martínez, Pau

2009-01-01

We describe a device for dual channel body temperature monitoring. The device can operate as a real time monitor or as a data logger, and has Bluetooth capabilities to enable for wireless data download to the computer used for data analysis. The proposed device is capable of sampling temperature at a rate of 1 sample per minute with a resolution of 0.01 °C . The internal memory allows for stand-alone data logging of up to 10 days. The device has a battery life of 50 hours in continuous real-time mode. In addition to describing the proposed device in detail, we report the results of a statistical analysis conducted to assess its accuracy and reproducibility.

Wireless sensor for temperature and humidity measurement

NASA Astrophysics Data System (ADS)

Drumea, Andrei; Svasta, Paul

2010-11-01

Temperature and humidity sensors have a broad range of applications, from heating and ventilation of houses to controlled drying of fruits, vegetables or meat in food industry. Modern sensors are integrated devices, usually MEMS, factory-calibrated and with digital output of measured parameters. They can have power down modes for reduced energy consumption. Such an integrated device allows the implementation of a battery powered wireless sensor when coupled with a low power microcontroller and a radio subsystem. A radio sensor can work independently or together with others in a radio network. Presented paper focuses mainly on measurement and construction aspects of sensors for temperature and humidity designed and implemented by authors; network aspects (communication between two or more sensors) are not analyzed.

iCalm: wearable sensor and network architecture for wirelessly communicating and logging autonomic activity.

PubMed

Fletcher, Richard Ribon; Dobson, Kelly; Goodwin, Matthew S; Eydgahi, Hoda; Wilder-Smith, Oliver; Fernholz, David; Kuboyama, Yuta; Hedman, Elliott Bruce; Poh, Ming-Zher; Picard, Rosalind W

2010-03-01

Widespread use of affective sensing in healthcare applications has been limited due to several practical factors, such as lack of comfortable wearable sensors, lack of wireless standards, and lack of low-power affordable hardware. In this paper, we present a new low-cost, low-power wireless sensor platform implemented using the IEEE 802.15.4 wireless standard, and describe the design of compact wearable sensors for long-term measurement of electrodermal activity, temperature, motor activity, and photoplethysmography. We also illustrate the use of this new technology for continuous long-term monitoring of autonomic nervous system and motion data from active infants, children, and adults. We describe several new applications enabled by this system, discuss two specific wearable designs for the wrist and foot, and present sample data.

Novel Si-Ge-C Superlattices for More than Moore CMOS

DTIC Science & Technology

2016-03-31

diodes can be entirely formed by epitaxial growth, CMOS Active Pixel Sensors can be made with Fully-Depleted SOI CMOS . One important advantage of...a NMOS Transfer Gate (TG), which could be part of a 4T pixel APS. PPDs are preferred in CMOS image sensors for the ability of the pinning layer to...than Moore” with the creation of active photonic devices monolithically integrated with CMOS . Applications include Multispectral CMOS Image Sensors

CAOS-CMOS camera.

PubMed

Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

2016-06-13

Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

NASA Astrophysics Data System (ADS)

Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

2018-05-01

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

A novel CMOS image sensor system for quantitative loop-mediated isothermal amplification assays to detect food-borne pathogens.

PubMed

Wang, Tiantian; Kim, Sanghyo; An, Jeong Ho

2017-02-01

Loop-mediated isothermal amplification (LAMP) is considered as one of the alternatives to the conventional PCR and it is an inexpensive portable diagnostic system with minimal power consumption. The present work describes the application of LAMP in real-time photon detection and quantitative analysis of nucleic acids integrated with a disposable complementary-metal-oxide semiconductor (CMOS) image sensor. This novel system works as an amplification-coupled detection platform, relying on a CMOS image sensor, with the aid of a computerized circuitry controller for the temperature and light sources. The CMOS image sensor captures the light which is passing through the sensor surface and converts into digital units using an analog-to-digital converter (ADC). This new system monitors the real-time photon variation, caused by the color changes during amplification. Escherichia coli O157 was used as a proof-of-concept target for quantitative analysis, and compared with the results for Staphylococcus aureus and Salmonella enterica to confirm the efficiency of the system. The system detected various DNA concentrations of E. coli O157 in a short time (45min), with a detection limit of 10fg/μL. The low-cost, simple, and compact design, with low power consumption, represents a significant advance in the development of a portable, sensitive, user-friendly, real-time, and quantitative analytic tools for point-of-care diagnosis. Copyright © 2016 Elsevier B.V. All rights reserved.

Design architecture for multi-zone HVAC control systems from existing single-zone systems using wireless sensor networks

NASA Astrophysics Data System (ADS)

Redfern, Andrew; Koplow, Michael; Wright, Paul

2007-01-01

Most residential heating, ventilating, and air-conditioning (HVAC) systems utilize a single zone for conditioning air throughout the entire house. While inexpensive, these systems lead to wide temperature distributions and inefficient cooling due to the difference in thermal loads in different rooms. The end result is additional cost to the end user because the house is over conditioned. To reduce the total amount of energy used in a home and to increase occupant comfort there is a need for a better control system using multiple temperature zones. Typical multi-zone systems are costly and require extensive infrastructure to function. Recent advances in wireless sensor networks (WSNs) have enabled a low cost drop-in wireless vent register control system. The register control system is controlled by a master controller unit, which collects sensor data from a distributed wireless sensor network. Each sensor node samples local settings (occupancy, light, humidity and temperature) and reports the data back to the master control unit. The master control unit compiles the incoming data and then actuates the vent resisters to control the airflow throughout the house. The control system also utilizes a smart thermostat with a movable set point to enable the user to define their given comfort levels. The new system can reduce the run time of the HVAC system and thus decreasing the amount of energy used and increasing the comfort of the home occupations.

Prospective motion correction using inductively coupled wireless RF coils.

PubMed

Ooi, Melvyn B; Aksoy, Murat; Maclaren, Julian; Watkins, Ronald D; Bammer, Roland

2013-09-01

A novel prospective motion correction technique for brain MRI is presented that uses miniature wireless radio-frequency coils, or "wireless markers," for position tracking. Each marker is free of traditional cable connections to the scanner. Instead, its signal is wirelessly linked to the MR receiver via inductive coupling with the head coil. Real-time tracking of rigid head motion is performed using a pair of glasses integrated with three wireless markers. A tracking pulse-sequence, combined with knowledge of the markers' unique geometrical arrangement, is used to measure their positions. Tracking data from the glasses is then used to prospectively update the orientation and position of the image-volume so that it follows the motion of the head. Wireless-marker position measurements were comparable to measurements using traditional wired radio-frequency tracking coils, with the standard deviation of the difference < 0.01 mm over the range of positions measured inside the head coil. Wireless-marker safety was verified with B1 maps and temperature measurements. Prospective motion correction was demonstrated in a 2D spin-echo scan while the subject performed a series of deliberate head rotations. Prospective motion correction using wireless markers enables high quality images to be acquired even during bulk motions. Wireless markers are small, avoid radio-frequency safety risks from electrical cables, are not hampered by mechanical connections to the scanner, and require minimal setup times. These advantages may help to facilitate adoption in the clinic. Copyright © 2013 Wiley Periodicals, Inc.

Toward an Ultralow-Power Onboard Processor for Tongue Drive System

PubMed Central

Viseh, Sina; Ghovanloo, Maysam; Mohsenin, Tinoosh

2015-01-01

The Tongue Drive System (TDS) is a new unobtrusive, wireless, and wearable assistive device that allows for real-time tracking of the voluntary tongue motion in the oral space for communication, control, and navigation applications. The latest TDS prototype appears as a wireless headphone and has been tested in human subject trials. However, the robustness of the external TDS (eTDS) in real-life outdoor conditions may not meet safety regulations because of the limited mechanical stability of the headset. The intraoral TDS (iTDS), which is in the shape of a dental retainer, firmly clasps to the upper teeth and resists sensor misplacement. However, the iTDS has more restrictions on its dimensions, limiting the battery size and consequently requiring a considerable reduction in its power consumption to operate over an extended period of two days on a single charge. In this brief, we propose an ultralow-power local processor for the TDS that performs all signal processing on the transmitter side, following the sensors. Assuming the TDS user on average issuing one command/s, implementing the computational engine reduces the data volume that needs to be wirelessly transmitted to a PC or smartphone by a factor of 1500×, from 12 kb/s to ~8 b/s. The proposed design is implemented on an ultralow-power IGLOO nano field-programmable gate array (FPGA) and is tested on AGLN250 prototype board. According to our post-place-and-route results, implementing the engine on the FPGA significantly drops the required data transmission, while an application-specific integrated circuit (ASIC) implementation in a 65-nm CMOS results in a 15× power saving compared to the FPGA solution and occupies a 0.02-mm2 footprint. As a result, the power consumption and size of the iTDS will be significantly reduced through the use of a much smaller rechargeable battery. Moreover, the system can operate longer following every recharge, improving the iTDS usability. PMID:26185489

Toward an Ultralow-Power Onboard Processor for Tongue Drive System.

PubMed

Viseh, Sina; Ghovanloo, Maysam; Mohsenin, Tinoosh

2015-02-01

The Tongue Drive System (TDS) is a new unobtrusive, wireless, and wearable assistive device that allows for real-time tracking of the voluntary tongue motion in the oral space for communication, control, and navigation applications. The latest TDS prototype appears as a wireless headphone and has been tested in human subject trials. However, the robustness of the external TDS (eTDS) in real-life outdoor conditions may not meet safety regulations because of the limited mechanical stability of the headset. The intraoral TDS (iTDS), which is in the shape of a dental retainer, firmly clasps to the upper teeth and resists sensor misplacement. However, the iTDS has more restrictions on its dimensions, limiting the battery size and consequently requiring a considerable reduction in its power consumption to operate over an extended period of two days on a single charge. In this brief, we propose an ultralow-power local processor for the TDS that performs all signal processing on the transmitter side, following the sensors. Assuming the TDS user on average issuing one command/s, implementing the computational engine reduces the data volume that needs to be wirelessly transmitted to a PC or smartphone by a factor of 1500×, from 12 kb/s to ~8 b/s. The proposed design is implemented on an ultralow-power IGLOO nano field-programmable gate array (FPGA) and is tested on AGLN250 prototype board. According to our post-place-and-route results, implementing the engine on the FPGA significantly drops the required data transmission, while an application-specific integrated circuit (ASIC) implementation in a 65-nm CMOS results in a 15× power saving compared to the FPGA solution and occupies a 0.02-mm 2 footprint. As a result, the power consumption and size of the iTDS will be significantly reduced through the use of a much smaller rechargeable battery. Moreover, the system can operate longer following every recharge, improving the iTDS usability.

A Low Cost Bluetooth Low Energy Transceiver for Wireless Sensor Network Applications with a Front-end Receiver-Matching Network-Reusing Power Amplifier Load Inductor.

PubMed

Liang, Zhen; Li, Bin; Huang, Mo; Zheng, Yanqi; Ye, Hui; Xu, Ken; Deng, Fangming

2017-04-19

In this work, a low cost Bluetooth Low Energy (BLE) transceiver for wireless sensor network (WSN) applications, with a receiver (RX)-matching network-reusing power amplifier (PA) load inductor, is presented. In order to decrease the die area, only two inductors were used in this work. Besides the one used in the voltage control oscillator (VCO), the PA load inductor was reused as the RX impedance matching component in the front-end. Proper controls have been applied to achieve high transmitter (TX) input impedance when the transceiver is in the receiving mode, and vice versa. This allows the TRX-switch/matching network integration without significant performance degradation. The RX adopted a low-IF structure and integrated a single-ended low noise amplifier (LNA), a current bleeding mixer, a 4th complex filter and a delta-sigma continuous time (CT) analog-to-digital converter (ADC). The TX employed a two-point PLL-based architecture with a non-linear PA. The RX achieved a sensitivity of -93 dBm and consumes 9.7 mW, while the TX achieved a 2.97% error vector magnitude (EVM) with 9.4 mW at 0 dBm output power. This design was fabricated in a 0.11 μm complementary metal oxide semiconductor (CMOS) technology and the front-end circuit only occupies 0.24 mm². The measurement results verify the effectiveness and applicability of the proposed BLE transceiver for WSN applications.

All-Digital Time-Domain CMOS Smart Temperature Sensor with On-Chip Linearity Enhancement.

PubMed

Chen, Chun-Chi; Chen, Chao-Lieh; Lin, Yi

2016-01-30

This paper proposes the first all-digital on-chip linearity enhancement technique for improving the accuracy of the time-domain complementary metal-oxide semiconductor (CMOS) smart temperature sensor. To facilitate on-chip application and intellectual property reuse, an all-digital time-domain smart temperature sensor was implemented using 90 nm Field Programmable Gate Arrays (FPGAs). Although the inverter-based temperature sensor has a smaller circuit area and lower complexity, two-point calibration must be used to achieve an acceptable inaccuracy. With the help of a calibration circuit, the influence of process variations was reduced greatly for one-point calibration support, reducing the test costs and time. However, the sensor response still exhibited a large curvature, which substantially affected the accuracy of the sensor. Thus, an on-chip linearity-enhanced circuit is proposed to linearize the curve and achieve a new linearity-enhanced output. The sensor was implemented on eight different Xilinx FPGA using 118 slices per sensor in each FPGA to demonstrate the benefits of the linearization. Compared with the unlinearized version, the maximal inaccuracy of the linearized version decreased from 5 °C to 2.5 °C after one-point calibration in a range of -20 °C to 100 °C. The sensor consumed 95 μW using 1 kSa/s. The proposed linearity enhancement technique significantly improves temperature sensing accuracy, avoiding costly curvature compensation while it is fully synthesizable for future Very Large Scale Integration (VLSI) system.

All-Digital Time-Domain CMOS Smart Temperature Sensor with On-Chip Linearity Enhancement

PubMed Central

Chen, Chun-Chi; Chen, Chao-Lieh; Lin, Yi

2016-01-01

This paper proposes the first all-digital on-chip linearity enhancement technique for improving the accuracy of the time-domain complementary metal-oxide semiconductor (CMOS) smart temperature sensor. To facilitate on-chip application and intellectual property reuse, an all-digital time-domain smart temperature sensor was implemented using 90 nm Field Programmable Gate Arrays (FPGAs). Although the inverter-based temperature sensor has a smaller circuit area and lower complexity, two-point calibration must be used to achieve an acceptable inaccuracy. With the help of a calibration circuit, the influence of process variations was reduced greatly for one-point calibration support, reducing the test costs and time. However, the sensor response still exhibited a large curvature, which substantially affected the accuracy of the sensor. Thus, an on-chip linearity-enhanced circuit is proposed to linearize the curve and achieve a new linearity-enhanced output. The sensor was implemented on eight different Xilinx FPGA using 118 slices per sensor in each FPGA to demonstrate the benefits of the linearization. Compared with the unlinearized version, the maximal inaccuracy of the linearized version decreased from 5 °C to 2.5 °C after one-point calibration in a range of −20 °C to 100 °C. The sensor consumed 95 μW using 1 kSa/s. The proposed linearity enhancement technique significantly improves temperature sensing accuracy, avoiding costly curvature compensation while it is fully synthesizable for future Very Large Scale Integration (VLSI) system. PMID:26840316

A fully integrated oven controlled microelectromechanical oscillator -- Part I. Design and fabrication

DOE PAGES

Wojciechowski, Kenneth E.; Baker, Michael S.; Clews, Peggy J.; ...

2015-06-24

Our paper reports the design and fabrication of a fully integrated oven controlled microelectromechanical oscillator (OCMO). This paper begins by describing the limits on oscillator frequency stability imposed by the thermal drift and electronic properties (Q, resistance) of both the resonant tank circuit and feedback electronics required to form an electronic oscillator. An OCMO is presented that takes advantage of high thermal isolation and monolithic integration of both micromechanical resonators and electronic circuitry to thermally stabilize or ovenize all the components that comprise an oscillator. This was achieved by developing a processing technique where both silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) circuitrymore » and piezoelectric aluminum nitride, AlN, micromechanical resonators are placed on a suspended platform within a standard CMOS integrated circuit. Operation at microscale sizes achieves high thermal resistances (~10 °C/mW), and hence thermal stabilization of the oscillators at very low-power levels when compared with the state-of-the-art ovenized crystal oscillators, OCXO. This constant resistance feedback circuit is presented that incorporates on platform resistive heaters and temperature sensors to both measure and stabilize the platform temperature. Moreover, the limits on temperature stability of the OCMO platform and oscillator frequency imposed by the gain of the constant resistance feedback loop, placement of the heater and temperature sensing resistors, as well as platform radiative and convective heat losses are investigated.« less

Low-power low-voltage superior-order curvature corrected voltage reference

NASA Astrophysics Data System (ADS)

Popa, Cosmin

2010-06-01

A complementary metal oxide semiconductor (CMOS) voltage reference with a logarithmic curvature-correction will be presented. The first-order compensation is realised using an original offset voltage follower (OVF) block as a proportional to absolute temperature (PTAT) voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. The new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier (ADA) block for compensating the logarithmic temperature dependent term from the first-order compensated voltage reference. In order to increase the circuit accuracy, an original temperature-dependent current generator will be designed for computing the exact type of the implemented curvature-correction. The relatively small complexity of the current squarer allows an important increasing of the circuit accuracy that could be achieved by increasing the current generator complexity. As a result of operating most of the MOS transistors in weak inversion, the original proposed voltage reference could be valuable for low-power applications. The circuit is implemented in 0.35 μm CMOS technology and consumes only 60μA for t = 25°C, being supplied at the minimal supply voltage V DD = 1.75V. The temperature coefficient of the reference voltage is 8.7 ppm/°C, while the line sensitivity is 0.75 mV/V for a supply voltage between 1.75 V and 7 V.

Microactuateur electrothermique bistable: Etude d'implementation avec une technologie standard CMOS

NASA Astrophysics Data System (ADS)

Ressejac, Isabelle

The general objective of this Ph.D. thesis was to study the implementation of a new type of eletrothermal microactuator. This actuator presents the advantages to be bistable and fabricated in a standard CMOS process, allowing the integration of a microelectronics addressing circuit on the same substrate. Experimental research work, presented in this thesis, relate to the different steps carried out in order to implement this CMOS MEMS device: its theoretical conception, its fabrication with a standard CMOS technology, its micromachining as a post-process, its characterization and its electro-thermo-mechanical modeling. The device was designed and fabricated by using Mitel 1,5 mum CMOS technology and the Can-MEMS service which are both available via the Canadian Microelectronics Corporation. Fabricated monolithically within a standard CMOS process, our microactuator is suitable for large-scale integration due to its small dimensions (length ˜1000 mum and width ˜150 mum). It constitutes the basic component of a N by N matrix controlled by a microelectronic addressing system built on the same substrate. Initially, only one micromachining technique (involving TMAH) was used, and long etching times (>9 h) were requires} in order to release the microstructures. However, the passivation layer from the CMOS process could protect the underlying metal from the TMAH for a sufficient time (only ˜1--2 h). Consequently, we had to develop a micromachining strategy with shorter etching times to allow the complete release of the microstructures without damaging them. Post-processing begins with deposition (by sputtering) of a platinum layer intended to protect the abutment from subsequent etching. Our micromachining strategy is mainly based on the use of a hybrid etching process starting with a first anisotropic TMAH etching followed by a XeF2 isotropic etching. After micromachining, the released microactuator has a significant initial deflection with its tip reaching a height up to a hundred times higher than its thickness. This natural deflection results from the relaxation of internal stresses inside the thin films which are part of the microactuator. These internal stresses are intrinsics to the host CMOS process. We have developed a model of the microactuator's initial deflection using mechanical properties of thin films and dimensions of the structure. Actuation experiments were performed in order to characterize the deflection of the microactuator with respect to the heating of the bilayers (separately and together). We have developed a thermal actuation analytical model for an n-layers multimorph structure, which takes into account the initial deflection resulting from the relaxation of stresses as well as the deflection due to the temperature increase during the electrothermal activation of the bilayers. (Abstract shortened by UMI.)

Research on a power management system for thermoelectric generators to drive wireless sensors on a spindle unit.

PubMed

Li, Sheng; Yao, Xinhua; Fu, Jianzhong

2014-07-16

Thermoelectric energy harvesting is emerging as a promising alternative energy source to drive wireless sensors in mechanical systems. Typically, the waste heat from spindle units in machine tools creates potential for thermoelectric generation. However, the problem of low and fluctuant ambient temperature differences in spindle units limits the application of thermoelectric generation to drive a wireless sensor. This study is devoted to presenting a transformer-based power management system and its associated control strategy to make the wireless sensor work stably at different speeds of the spindle. The charging/discharging time of capacitors is optimized through this energy-harvesting strategy. A rotating spindle platform is set up to test the performance of the power management system at different speeds. The experimental results show that a longer sampling cycle time will increase the stability of the wireless sensor. The experiments also prove that utilizing the optimal time can make the power management system work more effectively compared with other systems using the same sample cycle.

Wireless Actuation of Micromechanical Resonators

NASA Astrophysics Data System (ADS)

Mateen, Farrukh; Maedler, Carsten; Erramilli, Shyamsunder; Mohanty, Pritiraj

Wireless transfer of power is of fundamental and technical interest with applications ranging from remote operation of electronics, biomedical implants, and device actuation where hard-wired power sources are neither desirable nor practical. In particular, biomedical implants in the body or the brain need small footprint power receiving elements for wireless charging, which can be accomplished by micromechanical resonators. In contrast for fundamental experiments, ultra low-power wireless operation of micromechanical resonators in the microwave range makes low-temperature studies of mechanical systems in the quantum regime possible, where heat carried by the electrical wires in standard actuation techniques is detrimental to maintaining the resonator in a quantum state. We demonstrate successful actuation of micron-sized silicon-based piezoelectric resonators with resonance frequencies from 36 MHz to 120 MHz, at power levels of nanowatts and distances of about 3 feet, including polarization, distance and power dependence measurements. Our demonstration of wireless actuation of micromechanical resonators via electric-field coupling down to nanowatt levels enables a multitude of applications based on micromechanical resonators, inaccessible until now.

Analysis and experimental study of wireless power transfer with HTS coil and copper coil as the intermediate resonators system

NASA Astrophysics Data System (ADS)

Wang, Xiufang; Nie, Xinyi; Liang, Yilang; Lu, Falong; Yan, Zhongming; Wang, Yu

2017-01-01

Intermediate resonator (repeater) between transmitter and receiver can significantly increase the distance of wireless power transfer (WPT) and the efficiency of wireless power transfer. The wireless power transfer via strongly coupled magnetic resonances with an high temperature superconducting (HTS) coil and copper coil as intermediate resonators was presented in this paper. The electromagnetic experiment system under different conditions with different repeating coils were simulated by finite element software. The spatial distribution patterns of magnetic induction intensity at different distances were plotted. In this paper, we examined transfer characteristics with HTS repeating coil and copper repeating coil at 77 K and 300 K, respectively. Simulation and experimental results show that HTS and copper repeating coil can effectively enhance the space magnetic induction intensity, which has significant effect on improving the transmission efficiency and lengthening transmission distance. We found that the efficiency and the distance of wireless power transfer system with an HTS coil as repeater is much higher by using of copper coil as repeater.

Research on a Power Management System for Thermoelectric Generators to Drive Wireless Sensors on a Spindle Unit

PubMed Central

Li, Sheng; Yao, Xinhua; Fu, Jianzhong

2014-01-01

Thermoelectric energy harvesting is emerging as a promising alternative energy source to drive wireless sensors in mechanical systems. Typically, the waste heat from spindle units in machine tools creates potential for thermoelectric generation. However, the problem of low and fluctuant ambient temperature differences in spindle units limits the application of thermoelectric generation to drive a wireless sensor. This study is devoted to presenting a transformer-based power management system and its associated control strategy to make the wireless sensor work stably at different speeds of the spindle. The charging/discharging time of capacitors is optimized through this energy-harvesting strategy. A rotating spindle platform is set up to test the performance of the power management system at different speeds. The experimental results show that a longer sampling cycle time will increase the stability of the wireless sensor. The experiments also prove that utilizing the optimal time can make the power management system work more effectively compared with other systems using the same sample cycle. PMID:25033189

a Low-Power Wireless Sensor Network for Monitoring the Microcrack Initiations in Aerospace Composites

NASA Astrophysics Data System (ADS)

Li, Jian; Plotnikov, Yuri; Lin, Wendy W.

2008-02-01

A low power wireless sensor network was developed to monitor the microcrack events in aerospace composites. The microcracks in the composites mostly result from a stress loading or temperature and/or humidity cycles. Generally, a single microcrack is too small to be detected by conventional techniques such as X-ray or ultrasonic C-scan. The whole developed sensor network is aimed to capture the released acoustic signals by the microcracking events in real time. It comprises of a receiving station as well as a series of sensor nodes. Each sensor node includes two acoustic emission transducers as well as two signal amplification and data acquisition channels. Much of our development effort has been focused on reducing the power consumption of each node and improving the detection reliability for each event. Each sensor node is battery-powered and works in a sleep mode most of time. Once a microcrack is initiated in the composite, the acoustic signal triggers the node and wakes it up. The node will then react in several microseconds and digitize the signal. The digitized data is sent to the station wirelessly. The developed wireless sensor network system has been validated with microscopy of microcracked samples after temperature and humidity cycling and has proved to be an effective tool for microcracking detection. Furthermore, our low power consumption design and sophisticated wireless transmission mechanism enables a system with great potential for field structural health monitoring applications.

Scaled CMOS Reliability and Considerations for Spacecraft Systems: Bottom-Up and Top-Down Perspective

NASA Technical Reports Server (NTRS)

White, Mark

2012-01-01

New space missions will increasingly rely on more advanced technologies because of system requirements for higher performance, particularly in instruments and high-speed processing. Component-level reliability challenges with scaled CMOS in spacecraft systems from a bottom-up perspective have been presented. Fundamental Front-end and Back-end processing reliability issues with more aggressively scaled parts have been discussed. Effective thermal management from system-level to the componentlevel (top-down) is a key element in overall design of reliable systems. Thermal management in space systems must consider a wide range of issues, including thermal loading of many different components, and frequent temperature cycling of some systems. Both perspectives (top-down and bottom-up) play a large role in robust, reliable spacecraft system design.

Integrating Metal-Oxide-Decorated CNT Networks with a CMOS Readout in a Gas Sensor

PubMed Central

Lee, Hyunjoong; Lee, Sanghoon; Kim, Dai-Hong; Perello, David; Park, Young June; Hong, Seong-Hyeon; Yun, Minhee; Kim, Suhwan

2012-01-01

We have implemented a tin-oxide-decorated carbon nanotube (CNT) network gas sensor system on a single die. We have also demonstrated the deposition of metallic tin on the CNT network, its subsequent oxidation in air, and the improvement of the lifetime of the sensors. The fabricated array of CNT sensors contains 128 sensor cells for added redundancy and increased accuracy. The read-out integrated circuit (ROIC) was combined with coarse and fine time-to-digital converters to extend its resolution in a power-efficient way. The ROIC is fabricated using a 0.35 μm CMOS process, and the whole sensor system consumes 30 mA at 5 V. The sensor system was successfully tested in the detection of ammonia gas at elevated temperatures. PMID:22736966

Lab-on-CMOS Integration of Microfluidics and Electrochemical Sensors

PubMed Central

Huang, Yue; Mason, Andrew J.

2013-01-01

This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms. PMID:23939616

Lab-on-CMOS integration of microfluidics and electrochemical sensors.

PubMed

Huang, Yue; Mason, Andrew J

2013-10-07

This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms.

Vaginal temperature measurement by a wireless sensor for predicting the onset of calving in Japanese Black cows.

PubMed

Sakatani, Miki; Sugano, Takaaki; Higo, Aiki; Naotsuka, Koji; Hojo, Takuo; Gessei, Satoru; Uehara, Hiroshi; Takenouchi, Naoki

2018-04-15

We evaluated the utility of the continuous measurement of vaginal temperature by a wireless sensor and wireless connection for predicting the onset of calving and for clarifying the relationships among dystocia, calf conditions, and temperature changes at a commercial beef cattle farm in Japan. A total of 625 effective delivery data was collected. The temperature sensor inserted to the vagina on 7 days before the expected due date and collected the vaginal temperature every 5 min. The sensor detected two alerts according to the temperature change, one was the vaginal temperature of 4 h moving average compared to the same time temperature of last two days decreased more than 0.4 °C (Alert 1) and the other was the rupture of the allantoic sac and the dropped sensor temperature reached to the ambient temperature (Alert 2). The detection rates of Alert 1 and Alert 2 were 88.3% and 99.4%, respectively. The average time between Alert 1 and Alert 2 (Time 1) was 22 h, and that between Alert 2 and delivery (Time 2) was 2 h. These results indicated that the continuous measurement of vaginal temperature is effective for predicting the calving time. The necessity of assistance was correlated with dystocia, calf birth weight (BW), sex, and gestation periods. Interestingly, the durations of Times 1 and 2 were also associated with dystocia. The calf BW, sex, and gestation periods affected the length of Time 2. Our findings indicate that the BW of the calf is the most important factor for dystocia risk, and that the continuous measurement of vaginal temperature could become a good indicator for predicting not only the onset of calving, but also the necessity of assistance. Copyright © 2018 Elsevier Inc. All rights reserved.

Wireless sensor and data transmission needs and technologies for patient monitoring in the operating room and intensive care unit.

PubMed

Paksuniemi, M; Sorvoja, H; Alasaarela, E; Myllyla, R

2005-01-01

In the intensive care unit, or during anesthesia, patients are attached to monitors by cables. These cables obstruct nursing staff and hinder the patients from moving freely in the hospital. However, rapidly developing wireless technologies are expected to solve these problems. To this end, this study revealed problem areas in current patient monitoring and established the most important medical parameters to monitor. In addition, usable wireless techniques for short-range data transmission were explored and currently employed wireless applications in the hospital environment were studied. The most important parameters measured of the patient include blood pressures, electrocardiography, respiration rate, heart rate and temperature. Currently used wireless techniques in hospitals are based on the WMTS and WLAN standards. There are no viable solutions for short-range data transmission from patient sensors to patient monitors, but potentially usable techniques in the future are based on the WPAN standards. These techniques include Bluetooth, ZigBee and UWB. Other suitable techniques might be based on capacitive or inductive coupling. The establishing of wireless techniques depends on ensuring the reliability of data transmission, eliminating disturbance by other wireless devices, ensuring patient data security and patient safety, and lowering the power consumption and price.

Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates

NASA Astrophysics Data System (ADS)

Sakaike, Kohei; Akazawa, Muneki; Nakagawa, Akitoshi; Higashi, Seiichiro

2015-04-01

A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by meniscus force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal-oxide-semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a “blocking” layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V-1 s-1, respectively.

A new single-photon avalanche diode in 90nm standard CMOS technology.

PubMed

Karami, Mohammad Azim; Gersbach, Marek; Yoon, Hyung-June; Charbon, Edoardo

2010-10-11

We report on the first implementation of a single-photon avalanche diode (SPAD) in 90nm complementary metal oxide semiconductor (CMOS) technology. The detector features an octagonal multiplication region and a guard ring to prevent premature edge breakdown using a standard mask set exclusively. The proposed structure emerged from a systematic study aimed at miniaturization, while optimizing overall performance. The guard ring design is the result of an extensive modeling effort aimed at constraining the multiplication region within a well-defined area where the electric field exceeds the critical value for impact ionization. The device exhibits a dark count rate of 8.1 kHz, a maximum photon detection probability of 9% and the jitter of 398ps at a wavelength of 637nm, all of them measured at room temperature and 0.13V of excess bias voltage. An afterpulsing probability of 32% is achieved at the nominal dead time. Applications include time-of-flight 3D vision, fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy, and time-resolved gamma/X-ray imaging. Standard characterization of the SPAD was performed in different bias voltages and temperatures.

Radiation hard analog circuits for ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

2016-03-01

The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm = 4.5 cm2) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage.

Using a Novel Wireless-Networked Decentralized Control Scheme under Unpredictable Environmental Conditions

PubMed Central

Chang, Chung-Liang; Huang, Yi-Ming; Hong, Guo-Fong

2015-01-01

The direction of sunshine or the installation sites of environmental control facilities in the greenhouse result in different temperature and humidity levels in the various zones of the greenhouse, and thus, the production quality of crop is inconsistent. This study proposed a wireless-networked decentralized fuzzy control scheme to regulate the environmental parameters of various culture zones within a greenhouse. The proposed scheme can create different environmental conditions for cultivating different crops in various zones and achieve diversification or standardization of crop production. A star-type wireless sensor network is utilized to communicate with each sensing node, actuator node, and control node in various zones within the greenhouse. The fuzzy rule-based inference system is used to regulate the environmental parameters for temperature and humidity based on real-time data of plant growth response provided by a growth stage selector. The growth stage selector defines the control ranges of temperature and humidity of the various culture zones according to the leaf area of the plant, the number of leaves, and the cumulative amount of light. The experimental results show that the proposed scheme is stable and robust and provides basis for future greenhouse applications. PMID:26569264

A Time-Domain CMOS Oscillator-Based Thermostat with Digital Set-Point Programming

PubMed Central

Chen, Chun-Chi; Lin, Shih-Hao

2013-01-01

This paper presents a time-domain CMOS oscillator-based thermostat with digital set-point programming [without a digital-to-analog converter (DAC) or external resistor] to achieve on-chip thermal management of modern VLSI systems. A time-domain delay-line-based thermostat with multiplexers (MUXs) was used to substantially reduce the power consumption and chip size, and can benefit from the performance enhancement due to the scaling down of fabrication processes. For further cost reduction and accuracy enhancement, this paper proposes a thermostat using two oscillators that are suitable for time-domain curvature compensation instead of longer linear delay lines. The final time comparison was achieved using a time comparator with a built-in custom hysteresis to generate the corresponding temperature alarm and control. The chip size of the circuit was reduced to 0.12 mm2 in a 0.35-μm TSMC CMOS process. The thermostat operates from 0 to 90 °C, and achieved a fine resolution better than 0.05 °C and an improved inaccuracy of ± 0.6 °C after two-point calibration for eight packaged chips. The power consumption was 30 μW at a sample rate of 10 samples/s. PMID:23385403

Fabrication and characterization of SU-8-based capacitive micromachined ultrasonic transducer for airborne applications

NASA Astrophysics Data System (ADS)

Joseph, Jose; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

2018-01-01

We present a successful fabrication and characterization of a capacitive micromachined ultrasonic transducer (CMUT) with SU-8 as the membrane material. The goal of this research is to develop a post-CMOS compatible CMUT that can be monolithically integrated with the CMOS circuitry. The fabrication is based on a simple, three mask process, with all wet etching steps involved so that the device can be realized with minimal laboratory conditions. The maximum temperature involved in the whole process flow was 140°C, and hence, it is post-CMOS compatible. The fabricated device exhibited a resonant frequency of 835 kHz with bandwidth 62 kHz, when characterized in air. The pull-in and snapback characteristics of the device were analyzed. The influence of membrane radius on the center frequency and bandwidth was also experimentally evaluated by fabricating CMUTs with membrane radius varying from 30 to 54 μm with an interval of 4 μm. These devices were vibrating at frequencies from 5.2 to 1.8 MHz with an average Q-factor of 23.41. Acoustic characterization of the fabricated devices was performed in air, demonstrating the applicability of SU-8 CMUTs in airborne applications.

An efficient transmission power control scheme for temperature variation in wireless sensor networks.

PubMed

Lee, Jungwook; Chung, Kwangsue

2011-01-01

Wireless sensor networks collect data from several nodes dispersed at remote sites. Sensor nodes can be installed in harsh environments such as deserts, cities, and indoors, where the link quality changes considerably over time. Particularly, changes in transmission power may be caused by temperature, humidity, and other factors. In order to compensate for link quality changes, existing schemes detect the link quality changes between nodes and control transmission power through a series of feedback processes, but these approaches can cause heavy overhead with the additional control packets needed. In this paper, the change of the link quality according to temperature is examined through empirical experimentation. A new power control scheme combining both temperature-aware link quality compensation and a closed-loop feedback process to adapt to link quality changes is proposed. We prove that the proposed scheme effectively adapts the transmission power to the changing link quality with less control overhead and energy consumption.

Passive Wireless SAW Sensors for IVHM

NASA Technical Reports Server (NTRS)

Wilson, William C.; Perey, Daniel F.; Atkinson, Gary M.; Barclay, Rebecca O.

2008-01-01

NASA aeronautical programs require integrated vehicle health monitoring (IVHM) to ensure the safety of the crew and the vehicles. Future IVHM sensors need to be small, light weight, inexpensive, and wireless. Surface acoustic wave (SAW) technology meets all of these constraints. In addition it operates in harsh environments and over wide temperature ranges, and it is inherently radiation hardened. This paper presents a survey of research opportunities for universities and industry to develop new sensors that address anticipated IVHM needs for aerospace vehicles. Potential applications of passive wireless SAW sensors from ground testing to high altitude aircraft operations are presented, along with some of the challenges and issues of the technology.

An equivalent circuit model of supercapacitors for applications in wireless sensor networks

NASA Astrophysics Data System (ADS)

Yang, Hengzhao; Zhang, Ying

2011-04-01

Energy harvesting technologies have been extensively researched to develop long-lived wireless sensor networks. To better utilize the harvested energy, various energy storage systems are proposed. A simple circuit model is developed to describe supercapacitor behavior, which uses two resistor-capacitor branches with different time constants to characterize the charging and redistribution processes, and a variable leakage resistance (VLR) to characterize the self-discharge process. The voltage and temperature dependence of the VLR values is also discussed. Results show that the VLR model is more accurate than the energy recursive equation (ERE) models for short term wireless sensor network applications.

Preliminary Thermal Characterization of a Fully-Passive Wireless Backscattering Neuro-Recording Microsystem

NASA Technical Reports Server (NTRS)

Schwerdt, H. N.; Xu, W.; Shekhar, S.; Chae, J.; Miranda, F. A.

2011-01-01

We present analytical and experimental thermal characteristics of a battery-less, fully-passive wireless backscattering microsystem for recording of neuropotentials. A major challenge for cortically implantable microsystems involves minimizing the heat dissipated by on-chip circuitry, which can lead to permanent brain damage. Therefore, knowledge of temperature changes induced by implantable microsystems while in operation is of utmost importance. In this work, a discrete diode appended to the neuro-recording microsystem has been used to indirectly monitor the aforesaid temperature changes. Using this technique, the maximum temperature rise measured for the microsystem while in operation was 0.15 +/- 0.1 C, which is significantly less than current safety guidelines. Specific absorption ratio (SAR) due to the microsystem was also computed to further demonstrate fully-passive functionality of the neuro-recording microsystem.

A Wireless Monitoring System for Cracks on the Surface of Reactor Containment Buildings.

PubMed

Zhou, Jianguo; Xu, Yaming; Zhang, Tao

2016-06-14

Structural health monitoring with wireless sensor networks has been increasingly popular in recent years because of the convenience. In this paper, a real-time monitoring system for cracks on the surface of reactor containment buildings is presented. Customized wireless sensor networks platforms are designed and implemented with sensors especially for crack monitoring, which include crackmeters and temperature detectors. Software protocols like route discovery, time synchronization and data transfer are developed to satisfy the requirements of the monitoring system and stay simple at the same time. Simulation tests have been made to evaluate the performance of the system before full scale deployment. The real-life deployment of the crack monitoring system is carried out on the surface of reactor containment building in Daya Bay Nuclear Power Station during the in-service pressure test with 30 wireless sensor nodes.

Wireless Monitoring of the Height of Condensed Water in Steam Pipes

NASA Technical Reports Server (NTRS)

Lee, Hyeong Jae; Bar-Cohen, Yoseph; Lih, Shyh-Shiuh; Badescu, Mircea; Dingizian, Arsham; Takano, Nobuyuki; Blosiu, Julian O.

2014-01-01

A wireless health monitoring system has been developed for determining the height of water condensation in the steam pipes and the data acquisition is done remotely using a wireless network system. The developed system is designed to operate in the harsh environment encountered at manholes and the pipe high temperature of over 200 °C. The test method is an ultrasonic pulse-echo and the hardware includes a pulser, receiver and wireless modem for communication. Data acquisition and signal processing software were developed to determine the water height using adaptive signal processing and data communication that can be controlled while the hardware is installed in a manhole. A statistical decision-making tool is being developed based on the field test data to determine the height of in the condensed water under high noise conditions and other environmental factors.

CMOS Image Sensors for High Speed Applications.

PubMed

El-Desouki, Munir; Deen, M Jamal; Fang, Qiyin; Liu, Louis; Tse, Frances; Armstrong, David

2009-01-01

Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).

Battery-free, wireless sensors for full-body pressure and temperature mapping.

PubMed

Han, Seungyong; Kim, Jeonghyun; Won, Sang Min; Ma, Yinji; Kang, Daeshik; Xie, Zhaoqian; Lee, Kyu-Tae; Chung, Ha Uk; Banks, Anthony; Min, Seunghwan; Heo, Seung Yun; Davies, Charles R; Lee, Jung Woo; Lee, Chi-Hwan; Kim, Bong Hoon; Li, Kan; Zhou, Yadong; Wei, Chen; Feng, Xue; Huang, Yonggang; Rogers, John A

2018-04-04

Thin, soft, skin-like sensors capable of precise, continuous measurements of physiological health have broad potential relevance to clinical health care. Use of sensors distributed over a wide area for full-body, spatiotemporal mapping of physiological processes would be a considerable advance for this field. We introduce materials, device designs, wireless power delivery and communication strategies, and overall system architectures for skin-like, battery-free sensors of temperature and pressure that can be used across the entire body. Combined experimental and theoretical investigations of the sensor operation and the modes for wireless addressing define the key features of these systems. Studies with human subjects in clinical sleep laboratories and in adjustable hospital beds demonstrate functionality of the sensors, with potential implications for monitoring of circadian cycles and mitigating risks for pressure-induced skin ulcers. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Real-time indoor monitoring system based on wireless sensor networks

NASA Astrophysics Data System (ADS)

Wu, Zhengzhong; Liu, Zilin; Huang, Xiaowei; Liu, Jun

2008-10-01

Wireless sensor networks (WSN) greatly extend our ability to monitor and control the physical world. It can collaborate and aggregate a huge amount of sensed data to provide continuous and spatially dense observation of environment. The control and monitoring of indoor atmosphere conditions represents an important task with the aim of ensuring suitable working and living spaces to people. However, the comprehensive air quality, which includes monitoring of humidity, temperature, gas concentrations, etc., is not so easy to be monitored and controlled. In this paper an indoor WSN monitoring system was developed. In the system several sensors such as temperature sensor, humidity sensor, gases sensor, were built in a RF transceiver board for monitoring indoor environment conditions. The indoor environmental monitoring parameters can be transmitted by wireless to database server and then viewed throw PC or PDA accessed to the local area networks by administrators. The system, which was also field-tested and showed a reliable and robust characteristic, is significant and valuable to people.

Epoxy Chip-in-Carrier Integration and Screen-Printed Metalization for Multichannel Microfluidic Lab-on-CMOS Microsystems.

PubMed

Li, Lin; Yin, Heyu; Mason, Andrew J

2018-04-01

The integration of biosensors, microfluidics, and CMOS instrumentation provides a compact lab-on-CMOS microsystem well suited for high throughput measurement. This paper describes a new epoxy chip-in-carrier integration process and two planar metalization techniques for lab-on-CMOS that enable on-CMOS electrochemical measurement with multichannel microfluidics. Several design approaches with different fabrication steps and materials were experimentally analyzed to identify an ideal process that can achieve desired capability with high yield and low material and tool cost. On-chip electrochemical measurements of the integrated assembly were performed to verify the functionality of the chip-in-carrier packaging and its capability for microfluidic integration. The newly developed CMOS-compatible epoxy chip-in-carrier process paves the way for full implementation of many lab-on-CMOS applications with CMOS ICs as core electronic instruments.

Accelerated life testing effects on CMOS microcircuit characteristics

NASA Technical Reports Server (NTRS)

1977-01-01

Accelerated life tests were performed on CMOS microcircuits to predict their long term reliability. The consistency of the CMOS microcircuit activation energy between the range of 125 C to 200 C and the range 200 C to 250 C was determined. Results indicate CMOS complexity and the amount of moisture detected inside the devices after testing influences time to failure of tested CMOS devices.

Wireless Technology Use Case Requirement Analysis for Future Space Applications

NASA Technical Reports Server (NTRS)

Abedi, Ali; Wilkerson, DeLisa

2016-01-01

This report presents various use case scenarios for wireless technology -including radio frequency (RF), optical, and acoustic- and studies requirements and boundary conditions in each scenario. The results of this study can be used to prioritize technology evaluation and development and in the long run help in development of a roadmap for future use of wireless technology. The presented scenarios cover the following application areas: (i) Space Vehicles (manned/unmanned), (ii) Satellites and Payloads, (iii) Surface Explorations, (iv) Ground Systems, and (v) Habitats. The requirement analysis covers two parallel set of conditions. The first set includes the environmental conditions such as temperature, radiation, noise/interference, wireless channel characteristics and accessibility. The second set of requirements are dictated by the application and may include parameters such as latency, throughput (effective data rate), error tolerance, and reliability. This report provides a comprehensive overview of all requirements from both perspectives and details their effects on wireless system reliability and network design. Application area examples are based on 2015 NASA Technology roadmap with specific focus on technology areas: TA 2.4, 3.3, 5.2, 5.5, 6.4, 7.4, and 10.4 sections that might benefit from wireless technology.

Multifunctional Logic Gate Controlled by Temperature

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo

2005-01-01

A complementary metal oxide/semiconductor (CMOS) electronic circuit has been designed to function as a NAND gate at a temperature between 0 and 80 deg C and as a NOR gate at temperatures from 120 to 200 C. In the intermediate temperature range of 80 to 120 C, this circuit is expected to perform a function intermediate between NAND and NOR with degraded noise margin. The process of designing the circuit and the planned fabrication and testing of the circuit are parts of demonstration of polymorphic electronics a technological discipline that emphasizes designing the same circuit to perform different analog and/or digital functions under different conditions. In this case, the different conditions are different temperatures.

Microwave Backscatter-Based Wireless Temperature Sensor Fabricated by an Alumina-Backed Au Slot Radiation Patch.

PubMed

Lu, Fei; Wang, Haixing; Guo, Yanjie; Tan, Qiulin; Zhang, Wendong; Xiong, Jijun

2018-01-16

A wireless and passive temperature sensor operating up to 800 °C is proposed. The sensor is based on microwave backscatter RFID (radio frequency identification) technology. A thin-film planar structure and simple working principle make the sensor easy to operate under high temperature. In this paper, the proposed high temperature sensor was designed, fabricated, and characterized. Here the 99% alumina ceramic with a dimension of 40 mm × 40 mm × 1 mm was prepared in micromechanics for fabrication of the sensor substrate. The metallization of the Au slot patch was realized in magnetron sputtering with a slot width of 2 mm and a slot length of 32 mm. The measured resonant frequency of the sensor at 25 °C is 2.31 GHz. It was concluded that the resonant frequency decreases with the increase in the temperature in range of 25-800 °C. It was shown that the average sensor sensitivity is 101.94 kHz/°C.

Pyroelectric Energy Scavenging Techniques for Self-Powered Nuclear Reactor Wireless Sensor Networks

DOE PAGES

Hunter, Scott Robert; Lavrik, Nickolay V; Datskos, Panos G; ...

2014-11-01

Recent advances in technologies for harvesting waste thermal energy from ambient environments present an opportunity to implement truly wireless sensor nodes in nuclear power plants. These sensors could continue to operate during extended station blackouts and during periods when operation of the plant s internal power distribution system has been disrupted. The energy required to power the wireless sensors must be generated using energy harvesting techniques from locally available energy sources, and the energy consumption within the sensor circuitry must therefore be low to minimize power and hence the size requirements of the energy harvester. Harvesting electrical energy from thermalmore » energy sources can be achieved using pyroelectric or thermoelectric conversion techniques. Recent modeling and experimental studies have shown that pyroelectric techniques can be cost competitive with thermoelectrics in self powered wireless sensor applications and, using new temperature cycling techniques, has the potential to be several times as efficient as thermoelectrics under comparable operating conditions. The development of a new thermal energy harvester concept, based on temperature cycled pyroelectric thermal-to-electrical energy conversion, is outlined. This paper outlines the modeling of cantilever and pyroelectric structures and single element devices that demonstrate the potential of this technology for the development of high efficiency thermal-to-electrical energy conversion devices.« less

Pyroelectric Energy Scavenging Techniques for Self-Powered Nuclear Reactor Wireless Sensor Networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hunter, Scott Robert; Lavrik, Nickolay V; Datskos, Panos G

Recent advances in technologies for harvesting waste thermal energy from ambient environments present an opportunity to implement truly wireless sensor nodes in nuclear power plants. These sensors could continue to operate during extended station blackouts and during periods when operation of the plant s internal power distribution system has been disrupted. The energy required to power the wireless sensors must be generated using energy harvesting techniques from locally available energy sources, and the energy consumption within the sensor circuitry must therefore be low to minimize power and hence the size requirements of the energy harvester. Harvesting electrical energy from thermalmore » energy sources can be achieved using pyroelectric or thermoelectric conversion techniques. Recent modeling and experimental studies have shown that pyroelectric techniques can be cost competitive with thermoelectrics in self powered wireless sensor applications and, using new temperature cycling techniques, has the potential to be several times as efficient as thermoelectrics under comparable operating conditions. The development of a new thermal energy harvester concept, based on temperature cycled pyroelectric thermal-to-electrical energy conversion, is outlined. This paper outlines the modeling of cantilever and pyroelectric structures and single element devices that demonstrate the potential of this technology for the development of high efficiency thermal-to-electrical energy conversion devices.« less

A sub-nW 2.4 GHz Transmitter for Low Data-Rate Sensing Applications

PubMed Central

Mercier, Patrick P.; Bandyopadhyay, Saurav; Lysaght, Andrew C.; Stankovic, Konstantina M.; Chandrakasan, Anantha P.

2015-01-01

This paper presents the design of a narrowband transmitter and antenna system that achieves an average power consumption of 78 pW when operating at a duty-cycled data rate of 1 bps. Fabricated in a 0.18 µm CMOS process, the transmitter employs a direct-RF power oscillator topology where a loop antenna acts as a both a radiative and resonant element. The low-complexity single-stage architecture, in combination with aggressive power gating techniques and sizing optimizations, limited the standby power of the transmitter to only 39.7 pW at 0.8 V. Supporting both OOK and FSK modulations at 2.4 GHz, the transmitter consumed as low as 38 pJ/bit at an active-mode data rate of 5 Mbps. The loop antenna and integrated diodes were also used as part of a wireless power transfer receiver in order to kick-start the system power supply during energy harvesting operation. PMID:26246641

Transformational electronics are now reconfiguring

NASA Astrophysics Data System (ADS)

Rojas, Jhonathan P.; Hussain, Aftab M.; Arevalo, A.; Foulds, I. G.; Torres Sevilla, Galo A.; Nassar, Joanna M.; Hussain, Muhammad M.

2015-05-01

Current developments on enhancing our smart living experience are leveraging the increased interest for novel systems that can be compatible with foldable, wrinkled, wavy and complex geometries and surfaces, and thus become truly ubiquitous and easy to deploy. Therefore, relying on innovative structural designs we have been able to reconfigure the physical form of various materials, to achieve remarkable mechanical flexibility and stretchability, which provides us with the perfect platform to develop enhanced electronic systems for application in entertainment, healthcare, fitness and wellness, military and manufacturing industry. Based on these novel structural designs we have developed a siliconbased network of hexagonal islands connected through double-spiral springs, forming an ultra-stretchable (~1000%) array for full compliance to highly asymmetric shapes and surfaces, as well as a serpentine design used to show an ultrastretchable (~800%) and flexible, spatially reconfigurable, mobile, metallic thin film copper (Cu)-based, body-integrated and non-invasive thermal heater with wireless controlling capability, reusability, heating-adaptability and affordability due to low-cost complementary metal oxide semiconductor (CMOS)-compatible integration.

A Physically Transient Form of Silicon Electronics, With Integrated Sensors, Actuators and Power Supply

PubMed Central

Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A.; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L.; Zakin, Mitchell R.; Slepian, Marvin J.; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.

2013-01-01

A remarkable feature of modern silicon electronics is its ability to remain functionally and physically invariant, almost indefinitely for many practical purposes. Here, we introduce a silicon-based technology that offers the opposite behavior: it gradually vanishes over time, in a well-controlled, programmed manner. Devices that are ‘transient’ in this sense create application possibilities that cannot be addressed with conventional electronics, such as active implants that exist for medically useful timeframes, but then completely dissolve and disappear via resorption by the body. We report a comprehensive set of materials, manufacturing schemes, device components and theoretical design tools for a complementary metal oxide semiconductor (CMOS) electronics of this type, together with four different classes of sensors and actuators in addressable arrays, two options for power supply and a wireless control strategy. A transient silicon device capable of delivering thermal therapy in an implantable mode and its demonstration in animal models illustrate a system-level example of this technology. PMID:23019646

A Streaming PCA VLSI Chip for Neural Data Compression.

PubMed

Wu, Tong; Zhao, Wenfeng; Guo, Hongsun; Lim, Hubert H; Yang, Zhi

2017-12-01

Neural recording system miniaturization and integration with low-power wireless technologies require compressing neural data before transmission. Feature extraction is a procedure to represent data in a low-dimensional space; its integration into a recording chip can be an efficient approach to compress neural data. In this paper, we propose a streaming principal component analysis algorithm and its microchip implementation to compress multichannel local field potential (LFP) and spike data. The circuits have been designed in a 65-nm CMOS technology and occupy a silicon area of 0.06 mm. Throughout the experiments, the chip compresses LFPs by 10 at the expense of as low as 1% reconstruction errors and 144-nW/channel power consumption; for spikes, the achieved compression ratio is 25 with 8% reconstruction errors and 3.05-W/channel power consumption. In addition, the algorithm and its hardware architecture can swiftly adapt to nonstationary spiking activities, which enables efficient hardware sharing among multiple channels to support a high-channel count recorder.

An All-Digital Fast Tracking Switching Converter with a Programmable Order Loop Controller for Envelope Tracking RF Power Amplifiers

PubMed Central

Anabtawi, Nijad; Ferzli, Rony; Harmanani, Haidar M.

2017-01-01

This paper presents a step down, switched mode power converter for use in multi-standard envelope tracking radio frequency power amplifiers (RFPA). The converter is based on a programmable order sigma delta modulator that can be configured to operate with either 1st, 2nd, 3rd or 4th order loop filters, eliminating the need for a bulky passive output filter. Output ripple, sideband noise and spectral emission requirements of different wireless standards can be met by configuring the modulator’s filter order and converter’s sampling frequency. The proposed converter is entirely digital and is implemented in 14nm bulk CMOS process for post layout verification. For an input voltage of 3.3V, the converter’s output can be regulated to any voltage level from 0.5V to 2.5V, at a nominal switching frequency of 150MHz. It achieves a maximum efficiency of 94% at 1.5 W output power. PMID:28919657

Wireless biopotential acquisition system for portable healthcare monitoring.

PubMed

Wang, W-S; Huang, H-Y; Wu, Z-C; Chen, S-C; Wang, W-F; Wu, C-F; Luo, C-H

2011-07-01

A complete biopotential acquisition system with an analogue front-end (AFE) chip is proposed for portable healthcare monitoring. A graphical user interface (GUI) is also implemented to display the extracted biopotential signals in real-time on a computer for patients or in a hospital via the internet for doctors. The AFE circuit defines the quality of the acquired biosignals. Thus, an AFE chip with low power consumption and a high common-mode rejection ratio (CMRR) was implemented in the TSMC 0.18-μm CMOS process. The measurement results show that the proposed AFE, with a core area of 0.1 mm(2), has a CMRR of 90 dB, and power consumption of 21.6 μW. Biopotential signals of electroencephalogram (EEG), electrocardiogram (ECG) and electromyogram (EMG) were measured to verify the proposed system. The board size of the proposed system is 6 cm × 2.5 cm and the weight is 30 g. The total power consumption of the proposed system is 66 mW. Copyright © 2011 Informa UK, Ltd.

Low power and high accuracy spike sorting microprocessor with on-line interpolation and re-alignment in 90 nm CMOS process.

PubMed

Chen, Tung-Chien; Ma, Tsung-Chuan; Chen, Yun-Yu; Chen, Liang-Gee

2012-01-01

Accurate spike sorting is an important issue for neuroscientific and neuroprosthetic applications. The sorting of spikes depends on the features extracted from the neural waveforms, and a better sorting performance usually comes with a higher sampling rate (SR). However for the long duration experiments on free-moving subjects, the miniaturized and wireless neural recording ICs are the current trend, and the compromise on sorting accuracy is usually made by a lower SR for the lower power consumption. In this paper, we implement an on-chip spike sorting processor with integrated interpolation hardware in order to improve the performance in terms of power versus accuracy. According to the fabrication results in 90nm process, if the interpolation is appropriately performed during the spike sorting, the system operated at the SR of 12.5 k samples per second (sps) can outperform the one not having interpolation at 25 ksps on both accuracy and power.

Wearable system-on-a-chip UWB radar for contact-less cardiopulmonary monitoring: present status.

PubMed

Zito, D; Pepe, D; Mincica, M; Zito, F; De Rossi, D; Lanata, A; Scilingo, E P; Tognetti, A

2008-01-01

The present status of the project aimed at the realization of an innovative wearable system-on-chip UWB radar for the cardiopulmonary monitoring is presented. The overall system consists of a wearable wireless interface including a fully integrated UWB radar for the detection of the heart beat and breath rates, and a IEEE 802.15.4 ZigBee low-power radio interface. The principle of operation of the UWB radar for the monitoring of the heart wall is summarized. With respect to the prior art, this paper reports the results of the experimental characterization of the intra-body channel loss, which has been carried out successfully in order to validate the theoretical model employed for the radar system analysis. Moreover, the main building blocks of the radar have been manufactured in 90 nm CMOS technology by ST-Microelectronics and the relevant performance are resulted in excellent agreement with those expected by post-layout simulations.

Passive wireless surface acoustic wave sensors for monitoring sequestration sites CO 2 emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yizhong; Chyu, Minking; Wang, Qing-Ming

2013-02-14

University of Pittsburgh’s Transducer lab has teamed with the U.S. Department of Energy’s National Energy Technology Laboratory (DOE NETL) to conduct a comprehensive study to develop/evaluate low-cost, efficient CO 2 measuring technologies for geological sequestration sites leakage monitoring. A passive wireless CO 2 sensing system based on surface acoustic wave technology and carbon nanotube nanocomposite was developed. Surface acoustic wave device was studied to determine the optimum parameters. Delay line structure was adopted as basic sensor structure. CNT polymer nanocomposite was fabricated and tested under different temperature and strain condition for natural environment impact evaluation. Nanocomposite resistance increased for 5more » times under pure strain, while the temperature dependence of resistance for CNT solely was -1375ppm/°C. The overall effect of temperature on nanocomposite resistance was -1000ppm/°C. The gas response of the nanocomposite was about 10% resistance increase under pure CO 2 . The sensor frequency change was around 300ppm for pure CO 2 . With paralyne packaging, the sensor frequency change from relative humidity of 0% to 100% at room temperature decreased from over 1000ppm to less than 100ppm. The lowest detection limit of the sensor is 1% gas concentration, with 36ppm frequency change. Wireless module was tested and showed over one foot transmission distance at preferred parallel orientation.« less

Fabrication and characterization of a germanium nanowire light emitting diode

NASA Astrophysics Data System (ADS)

Greil, Johannes; Bertagnolli, Emmerich; Salem, Bassem; Baron, Thierry; Gentile, Pascal; Lugstein, Alois

2017-12-01

In this letter, we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach for downscaling of CMOS compatible light sources. We show room-temperature direct bandgap electroluminescence from axial p-n junction nanowire devices. The electron population in the Γ valley, necessary for direct bandgap emission, is achieved by high injection current densities. Carrier temperature is consistently found to be higher than the lattice temperature, indicating inhibited carrier cooling in small diameter wires. Strong polarization of the emission parallel to the nanowire axis is observed and attributed to dielectric contrast phenomena.

Scientific CMOS Pixels

NASA Astrophysics Data System (ADS)

Janesick, James; Gunawan, Ferry; Dosluoglu, Taner; Tower, John; McCaffrey, Niel

2002-08-01

High performance CMOS pixels are introduced; and their development is discussed. 3T (3-transistor) photodiode, 5T pinned diode, 6T photogate and 6T photogate back illuminated CMOS pixels are examined in detail, and the latter three are considered as scientific pixels. The advantages and disadvantagesof these options for scientific CMOS pixels are examined.Pixel characterization, which is used to gain a better understanding of CMOS pixels themselves, is also discussed.

Scientific CMOS Pixels

NASA Astrophysics Data System (ADS)

Janesick, J.; Gunawan, F.; Dosluoglu, T.; Tower, J.; McCaffrey, N.

High performance CMOS pixels are introduced and their development is discussed. 3T (3-transistor) photodiode, 5T pinned diode, 6T photogate and 6T photogate back illuminated CMOS pixels are examined in detail, and the latter three are considered as scientific pixels. The advantages and disadvantages of these options for scientific CMOS pixels are examined. Pixel characterization, which is used to gain a better understanding of CMOS pixels themselves, is also discussed.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Optical design of microlens array for CMOS image sensors

NASA Astrophysics Data System (ADS)

Zhang, Rongzhu; Lai, Liping

2016-10-01

The optical crosstalk between the pixel units can influence the image quality of CMOS image sensor. In the meantime, the duty ratio of CMOS is low because of its pixel structure. These two factors cause the low detection sensitivity of CMOS. In order to reduce the optical crosstalk and improve the fill factor of CMOS image sensor, a microlens array has been designed and integrated with CMOS. The initial parameters of the microlens array have been calculated according to the structure of a CMOS. Then the parameters have been optimized by using ZEMAX and the microlens arrays with different substrate thicknesses have been compared. The results show that in order to obtain the best imaging quality, when the effect of optical crosstalk for CMOS is the minimum, the best distance between microlens array and CMOS is about 19.3 μm. When incident light successively passes through microlens array and the distance, obtaining the minimum facula is around 0.347 um in the active area. In addition, when the incident angle of the light is 0o 22o, the microlens array has obvious inhibitory effect on the optical crosstalk. And the anti-crosstalk distance between microlens array and CMOS is 0 μm 162 μm.

Prospective Motion Correction using Inductively-Coupled Wireless RF Coils

PubMed Central

Ooi, Melvyn B.; Aksoy, Murat; Maclaren, Julian; Watkins, Ronald D.; Bammer, Roland

2013-01-01

Purpose A novel prospective motion correction technique for brain MRI is presented that uses miniature wireless radio-frequency (RF) coils, or “wireless markers”, for position tracking. Methods Each marker is free of traditional cable connections to the scanner. Instead, its signal is wirelessly linked to the MR receiver via inductive coupling with the head coil. Real-time tracking of rigid head motion is performed using a pair of glasses integrated with three wireless markers. A tracking pulse-sequence, combined with knowledge of the markers’ unique geometrical arrangement, is used to measure their positions. Tracking data from the glasses is then used to prospectively update the orientation and position of the image-volume so that it follows the motion of the head. Results Wireless-marker position measurements were comparable to measurements using traditional wired RF tracking coils, with the standard deviation of the difference < 0.01 mm over the range of positions measured inside the head coil. RF safety was verified with B1 maps and temperature measurements. Prospective motion correction was demonstrated in a 2D spin-echo scan while the subject performed a series of deliberate head rotations. Conclusion Prospective motion correction using wireless markers enables high quality images to be acquired even during bulk motions. Wireless markers are small, avoid RF safety risks from electrical cables, are not hampered by mechanical connections to the scanner, and require minimal setup times. These advantages may help to facilitate adoption in the clinic. PMID:23813444

The prototype cameras for trans-Neptunian automatic occultation survey

NASA Astrophysics Data System (ADS)

Wang, Shiang-Yu; Ling, Hung-Hsu; Hu, Yen-Sang; Geary, John C.; Chang, Yin-Chang; Chen, Hsin-Yo; Amato, Stephen M.; Huang, Pin-Jie; Pratlong, Jerome; Szentgyorgyi, Andrew; Lehner, Matthew; Norton, Timothy; Jorden, Paul

2016-08-01

The Transneptunian Automated Occultation Survey (TAOS II) is a three robotic telescope project to detect the stellar occultation events generated by TransNeptunian Objects (TNOs). TAOS II project aims to monitor about 10000 stars simultaneously at 20Hz to enable statistically significant event rate. The TAOS II camera is designed to cover the 1.7 degrees diameter field of view of the 1.3m telescope with 10 mosaic 4.5k×2k CMOS sensors. The new CMOS sensor (CIS 113) has a back illumination thinned structure and high sensitivity to provide similar performance to that of the back-illumination thinned CCDs. Due to the requirements of high performance and high speed, the development of the new CMOS sensor is still in progress. Before the science arrays are delivered, a prototype camera is developed to help on the commissioning of the robotic telescope system. The prototype camera uses the small format e2v CIS 107 device but with the same dewar and also the similar control electronics as the TAOS II science camera. The sensors, mounted on a single Invar plate, are cooled to the operation temperature of about 200K as the science array by a cryogenic cooler. The Invar plate is connected to the dewar body through a supporting ring with three G10 bipods. The control electronics consists of analog part and a Xilinx FPGA based digital circuit. One FPGA is needed to control and process the signal from a CMOS sensor for 20Hz region of interests (ROI) readout.

Development of a Wireless Network of Temperature Sensors for Yellowstone National Park (USA)

NASA Astrophysics Data System (ADS)

Munday, D. A.; Hutter, T.; Minolli, M.; Obraczka, K.; Manduchi, R.; Petersen, S.; Lowenstern, J. B.; Heasler, H.

2007-12-01

Temperature sensors deployed at Yellowstone clearly document that thermal features can vary in temperature on a variety of timescales and show regional correlations unrelated to meteorological variables such as air temperature. Yellowstone National Park (YNP) staff currently measures temperatures at over 40 thermal features and streams within the park, utilizing USGS stream gaging stations and portable data loggers deployed in geyser basins. The latter measure temperature every 1 to 15 minutes, and the data are physically downloaded after about 30 days. Installation of a wireless sensor network would: 1) save considerable time and effort in data retrieval, 2) minimize lost data due to equipment failure, and 3) provide a means to monitor thermal perturbations in near-real time. To meet this need, we developed a wireless sensor network capable of in-situ monitoring of air and water temperature. Temperature sensors are dispersed as nodes that communicate among themselves and through relays to a single base-station linked to the Internet. The small, weatherproof sensors operate unattended for over six months at temperatures as low as -40°C. Each uses an ultra-low-power Texas Instruments' MSP430 microcontroller and an SD card as mass storage. They are powered by 15Ah, 3.6 v, inert Li-ion batteries and transmit data via 900MHz radio modules with a 1-km range. The initial prototype consists of 4 nodes, and is designed to scale with additional nodes for finer spatial resolution and broader coverage. Temperature measurements are asynchronous from node to node, with intervals as frequent as 30 seconds. Data are stored internally to withstand temporary communication failures; underlying intelligent software is capable of re-routing data through alternative nodes to the base station and a MySQL data archiving system. We also developed a Google-Maps-based, front-end that displays the data, recent trends and sensor locations. The system was tested in the Santa Cruz Mountains and will be used at Yellowstone National Park during Fall 2007.

A Wireless Monitoring System for Cracks on the Surface of Reactor Containment Buildings

PubMed Central

Zhou, Jianguo; Xu, Yaming; Zhang, Tao

2016-01-01

Structural health monitoring with wireless sensor networks has been increasingly popular in recent years because of the convenience. In this paper, a real-time monitoring system for cracks on the surface of reactor containment buildings is presented. Customized wireless sensor networks platforms are designed and implemented with sensors especially for crack monitoring, which include crackmeters and temperature detectors. Software protocols like route discovery, time synchronization and data transfer are developed to satisfy the requirements of the monitoring system and stay simple at the same time. Simulation tests have been made to evaluate the performance of the system before full scale deployment. The real-life deployment of the crack monitoring system is carried out on the surface of reactor containment building in Daya Bay Nuclear Power Station during the in-service pressure test with 30 wireless sensor nodes. PMID:27314357

An Enhanced PSO-Based Clustering Energy Optimization Algorithm for Wireless Sensor Network.

PubMed

Vimalarani, C; Subramanian, R; Sivanandam, S N

2016-01-01

Wireless Sensor Network (WSN) is a network which formed with a maximum number of sensor nodes which are positioned in an application environment to monitor the physical entities in a target area, for example, temperature monitoring environment, water level, monitoring pressure, and health care, and various military applications. Mostly sensor nodes are equipped with self-supported battery power through which they can perform adequate operations and communication among neighboring nodes. Maximizing the lifetime of the Wireless Sensor networks, energy conservation measures are essential for improving the performance of WSNs. This paper proposes an Enhanced PSO-Based Clustering Energy Optimization (EPSO-CEO) algorithm for Wireless Sensor Network in which clustering and clustering head selection are done by using Particle Swarm Optimization (PSO) algorithm with respect to minimizing the power consumption in WSN. The performance metrics are evaluated and results are compared with competitive clustering algorithm to validate the reduction in energy consumption.

High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

PubMed

Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

2010-12-15

A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging. Copyright © 2010 Elsevier B.V. All rights reserved.

Wireless SAW passive tag temperature measurement in the collision case

NASA Astrophysics Data System (ADS)

Sorokin, A.; Shepeta, A.; Wattimena, M.

2018-04-01

This paper describes temperature measurement in the multisensor systems based on the radio-frequency identification SAW passive tags which are currently applied in the electric power systems and the switchgears. Different approaches of temperature measurement in the collision case are shown here. The study is based on the tag model with specific topology, which allows us to determine temperature through the response signal with time-frequency information. This research considers the collision case for several passive tags as the temperature sensors which are placed in the switchgear. This research proposal is to analyze the possibility of using several SAW passive sensors in the collision case. We consider the using of the different typical elements for passive surface acoustic wave tag which applies as an anticollision passive sensor. These wireless sensors based on the surface acoustic waves tags contain specifically coded structures. This topology makes possible the reliability of increasing tag identification and the temperature measurement in the collision case. As the results for this case we illustrate simultaneous measurement of at least six sensors.

Active Wireless Temperature Sensors for Aerospace Thermal Protection Systems

NASA Technical Reports Server (NTRS)

Milos, Frank S.; Karunaratne, K.; Arnold, Jim (Technical Monitor)

2002-01-01

Health diagnostics is an area where major improvements have been identified for potential implementation into the design of new reusable launch vehicles in order to reduce life-cycle costs, to increase safety margins, and to improve mission reliability. NASA Ames is leading the effort to advance inspection and health management technologies for thermal protection systems. This paper summarizes a joint project between NASA Ames and Korteks to develop active wireless sensors that can be embedded in the thermal protection system to monitor sub-surface temperature histories. These devices are thermocouples integrated with radio-frequency identification circuitry to enable acquisition and non-contact communication of temperature data through aerospace thermal protection materials. Two generations of prototype sensors are discussed. The advanced prototype collects data from three type-k thermocouples attached to a 2.54-cm square integrated circuit.

Efficient security mechanisms for mHealth applications using wireless body sensor networks.

PubMed

Sahoo, Prasan Kumar

2012-01-01

Recent technological advances in wireless communications and physiological sensing allow miniature, lightweight, ultra-low power, intelligent monitoring devices, which can be integrated into a Wireless Body Sensor Network (WBSN) for health monitoring. Physiological signals of humans such as heartbeats, temperature and pulse can be monitored from a distant location using tiny biomedical wireless sensors. Hence, it is highly essential to combine the ubiquitous computing with mobile health technology using wireless sensors and smart phones to monitor the well-being of chronic patients such as cardiac, Parkinson and epilepsy patients. Since physiological data of a patient are highly sensitive, maintaining its confidentiality is highly essential. Hence, security is a vital research issue in mobile health (mHealth) applications, especially if a patient has an embarrassing disease. In this paper a three tier security architecture for the mHealth application is proposed, in which light weight data confidentiality and authentication protocols are proposed to maintain the privacy of a patient. Moreover, considering the energy and hardware constraints of the wireless body sensors, low complexity data confidential and authentication schemes are designed. Performance evaluation of the proposed architecture shows that they can satisfy the energy and hardware limitations of the sensors and still can maintain the secure fabrics of the wireless body sensor networks. Besides, the proposed schemes can outperform in terms of energy consumption, memory usage and computation time over standard key establishment security scheme.

Efficient Security Mechanisms for mHealth Applications Using Wireless Body Sensor Networks

PubMed Central

Sahoo, Prasan Kumar

2012-01-01

Recent technological advances in wireless communications and physiological sensing allow miniature, lightweight, ultra-low power, intelligent monitoring devices, which can be integrated into a Wireless Body Sensor Network (WBSN) for health monitoring. Physiological signals of humans such as heartbeats, temperature and pulse can be monitored from a distant location using tiny biomedical wireless sensors. Hence, it is highly essential to combine the ubiquitous computing with mobile health technology using wireless sensors and smart phones to monitor the well-being of chronic patients such as cardiac, Parkinson and epilepsy patients. Since physiological data of a patient are highly sensitive, maintaining its confidentiality is highly essential. Hence, security is a vital research issue in mobile health (mHealth) applications, especially if a patient has an embarrassing disease. In this paper a three tier security architecture for the mHealth application is proposed, in which light weight data confidentiality and authentication protocols are proposed to maintain the privacy of a patient. Moreover, considering the energy and hardware constraints of the wireless body sensors, low complexity data confidential and authentication schemes are designed. Performance evaluation of the proposed architecture shows that they can satisfy the energy and hardware limitations of the sensors and still can maintain the secure fabrics of the wireless body sensor networks. Besides, the proposed schemes can outperform in terms of energy consumption, memory usage and computation time over standard key establishment security scheme. PMID:23112734

High accuracy digital aging monitor based on PLL-VCO circuit

NASA Astrophysics Data System (ADS)

Yuejun, Zhang; Zhidi, Jiang; Pengjun, Wang; Xuelong, Zhang

2015-01-01

As the manufacturing process is scaled down to the nanoscale, the aging phenomenon significantly affects the reliability and lifetime of integrated circuits. Consequently, the precise measurement of digital CMOS aging is a key aspect of nanoscale aging tolerant circuit design. This paper proposes a high accuracy digital aging monitor using phase-locked loop and voltage-controlled oscillator (PLL-VCO) circuit. The proposed monitor eliminates the circuit self-aging effect for the characteristic of PLL, whose frequency has no relationship with circuit aging phenomenon. The PLL-VCO monitor is implemented in TSMC low power 65 nm CMOS technology, and its area occupies 303.28 × 298.94 μm2. After accelerating aging tests, the experimental results show that PLL-VCO monitor improves accuracy about high temperature by 2.4% and high voltage by 18.7%.

Development of a radiation-hard CMOS process

NASA Technical Reports Server (NTRS)

Power, W. L.

1983-01-01

It is recommended that various techniques be investigated which appear to have the potential for improving the radiation hardness of CMOS devices for prolonged space flight mission. The three key recommended processing techniques are: (1) making the gate oxide thin. It has been shown that radiation degradation is proportional to the cube of oxide thickness so that a relatively small reduction in thickness can greatly improve radiation resistance; (2) cleanliness and contamination control; and (3) to investigate different oxide growth (low temperature dry, TCE and HCL). All three produce high quality clean oxides, which are more radiation tolerant. Technique 2 addresses the reduction of metallic contamination. Technique 3 will produce a higher quality oxide by using slow growth rate conditions, and will minimize the effects of any residual sodium contamination through the introduction of hydrogen and chlorine into the oxide during growth.

Review of Research Status and Development Trends of Wireless Passive LC Resonant Sensors for Harsh Environments.

PubMed

Li, Chen; Tan, Qiulin; Jia, Pinggang; Zhang, Wendong; Liu, Jun; Xue, Chenyang; Xiong, Jijun

2015-06-04

Measurement technology for various key parameters in harsh environments (e.g., high-temperature and biomedical applications) continues to be limited. Wireless passive LC resonant sensors offer long service life and can be suitable for harsh environments because they can transmit signals without battery power or wired connections. Consequently, these devices have become the focus of many current research studies. This paper addresses recent research, key technologies, and practical applications relative to passive LC sensors used to monitor temperature, pressure, humidity, and harmful gases in harsh environments. The advantages and disadvantages of various sensor types are discussed, and prospects and challenges for future development of these sensors are presented.

Review of Research Status and Development Trends of Wireless Passive LC Resonant Sensors for Harsh Environments

PubMed Central

Li, Chen; Tan, Qiulin; Jia, Pinggang; Zhang, Wendong; Liu, Jun; Xue, Chenyang; Xiong, Jijun

2015-01-01

Measurement technology for various key parameters in harsh environments (e.g., high-temperature and biomedical applications) continues to be limited. Wireless passive LC resonant sensors offer long service life and can be suitable for harsh environments because they can transmit signals without battery power or wired connections. Consequently, these devices have become the focus of many current research studies. This paper addresses recent research, key technologies, and practical applications relative to passive LC sensors used to monitor temperature, pressure, humidity, and harmful gases in harsh environments. The advantages and disadvantages of various sensor types are discussed, and prospects and challenges for future development of these sensors are presented. PMID:26053753

Substrate Integrated Waveguide (SIW)-Based Wireless Temperature Sensor for Harsh Environments.

PubMed

Tan, Qiulin; Guo, Yanjie; Zhang, Lei; Lu, Fei; Dong, Helei; Xiong, Jijun

2018-05-03

This paper presents a new wireless sensor structure based on a substrate integrated circular waveguide (SICW) for the temperature test in harsh environments. The sensor substrate material is 99% alumina ceramic, and the SICW structure is composed of upper and lower metal plates and a series of metal cylindrical sidewall vias. A rectangular aperture antenna integrated on the surface of the SICW resonator is used for electromagnetic wave transmission between the sensor and the external antenna. The resonant frequency of the temperature sensor decreases when the temperature increases, because the relative permittivity of the alumina ceramic increases with temperature. The temperature sensor presented in this paper was tested four times at a range of 30⁻1200 °C, and a broad band coplanar waveguide (CPW)-fed antenna was used as an interrogation antenna during the test process. The resonant frequency changed from 2.371 to 2.141 GHz as the temperature varied from 30 to 1200 °C, leading to a sensitivity of 0.197 MHz/°C. The quality factor of the sensor changed from 3444.6 to 35.028 when the temperature varied from 30 to 1000 °C.

Multiplane and Spectrally-Resolved Single Molecule Localization Microscopy with Industrial Grade CMOS cameras.

PubMed

Babcock, Hazen P

2018-01-29

This work explores the use of industrial grade CMOS cameras for single molecule localization microscopy (SMLM). We show that industrial grade CMOS cameras approach the performance of scientific grade CMOS cameras at a fraction of the cost. This makes it more economically feasible to construct high-performance imaging systems with multiple cameras that are capable of a diversity of applications. In particular we demonstrate the use of industrial CMOS cameras for biplane, multiplane and spectrally resolved SMLM. We also provide open-source software for simultaneous control of multiple CMOS cameras and for the reduction of the movies that are acquired to super-resolution images.

An 80x80 microbolometer type thermal imaging sensor using the LWIR-band CMOS infrared (CIR) technology

NASA Astrophysics Data System (ADS)

Tankut, Firat; Cologlu, Mustafa H.; Askar, Hidir; Ozturk, Hande; Dumanli, Hilal K.; Oruc, Feyza; Tilkioglu, Bilge; Ugur, Beril; Akar, Orhan Sevket; Tepegoz, Murat; Akin, Tayfun

2017-02-01

This paper introduces an 80x80 microbolometer array with a 35 μm pixel pitch operating in the 8-12 μm wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a novel microbolometer implementation technique developed to reduce the detector cost in order to enable the use of microbolometer type sensors in high volume markets, such as the consumer market and IoT. Unlike the widely used conventional surface micromachined microbolometer approaches, MikroSens' CIR detector technology does not require the use of special high TCR materials like VOx or a-Si, instead, it allows to implement microbolometers with standard CMOS layers, where the suspended bulk micromachined structure is obtained by only few consecutive selective MEMS etching steps while protecting the wirebond pads with a simple lithograpy step. This approach not only reduces the fabrication cost but also increases the production yield. In addition, needing simple subtractive post-CMOS fabrication steps allows the CIR technology to be carried out in any CMOS and MEMS foundry in a truly fabless fashion, where industrially mature and Au-free wafer level vacuum packaging technologies can also be carried out, leading to cost advantage, simplicity, scalability, and flexibility. The CIR approach is used to implement an 80x80 FPA with 35 μm pixel pitch, namely MS0835A, using a 0.18 μm CMOS process. The fabricated sensor is measured to provide NETD (Noise Equivalent Temperature Difference) value of 163 mK at 17 fps (frames per second) and 71 mK at 4 fps with F/1.0 optics in a dewar environment. The measurement results of the wafer level vacuum packaged sensors with one side AR coating shows an NETD values of 112 mK at 4 fps with F/1.1 optics, i.e., demonstrates a good performance for high volume low-cost applications like advanced presence detection and human counting applications. The CIR approach of MikroSens is scalable and can be used to reduce the pixel pitch even further while increasing the array size if necessary for various other low-cost, high volume applications.

Portable design rules for bulk CMOS

NASA Technical Reports Server (NTRS)

Griswold, T. W.

1982-01-01

It is pointed out that for the past several years, one school of IC designers has used a simplified set of nMOS geometric design rules (GDR) which is 'portable', in that it can be used by many different nMOS manufacturers. The present investigation is concerned with a preliminary set of design rules for bulk CMOS which has been verified for simple test structures. The GDR are defined in terms of Caltech Intermediate Form (CIF), which is a geometry-description language that defines simple geometrical objects in layers. The layers are abstractions of physical mask layers. The design rules do not presume the existence of any particular design methodology. Attention is given to p-well and n-well CMOS processes, bulk CMOS and CMOS-SOS, CMOS geometric rules, and a description of the advantages of CMOS technology.

Development of Individually Addressable Micro-Mirror-Arrays for Space Applications

NASA Technical Reports Server (NTRS)

Dutta, Sanghamitra B.; Ewin, Audrey J.; Jhabvala, Murzy; Kotecki, Carl A.; Kuhn, Jonathan L.; Mott, D. Brent

2000-01-01

We have been developing a 32 x 32 prototype array of individually addressable Micro-Mirrors capable of operating at cryogenic temperature for Earth and Space Science applications. Micro-Mirror-Array technology has the potential to revolutionize imaging and spectroscopy systems for NASA's missions of the 21st century. They can be used as programmable slits for the Next Generation Space Telescope, as smart sensors for a steerable spectrometer, as neutral density filters for bright scene attenuation etc. The, entire fabrication process is carried out in the Detector Development Laboratory at NASA, GSFC. The fabrication process is low temperature compatible and involves integration of conventional CMOS technology and surface micro-machining used in MEMS. Aluminum is used as the mirror material and is built on a silicon substrate containing the CMOS address circuit. The mirrors are 100 microns x l00 microns in area and deflect by +/- 10 deg induced by electrostatic actuation between two parallel plate capacitors. A pair of thin aluminum torsion straps allow the mirrors to tilt. Finite-element-analysis and closed form solutions using electrostatic and mechanical torque for mirror operation were developed and the results were compared with laboratory performance. The results agree well both at room temperature and at cryogenic temperature. The development demonstrates the first cryogenic operation of two-dimensional Micro-Mirrors with bi-state operation. Larger arrays will be developed meeting requirements for different science applications. Theoretical analysis, fabrication process, laboratory test results and different science applications will be described in detail.

Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

PubMed Central

Khan, Z. N.; Ahmed, S.; Ali, M.

2016-01-01

Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application. PMID:27571412

77 FR 26787 - Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-07

... INTERNATIONAL TRADE COMMISSION [Docket No. 2895] Certain CMOS Image Sensors and Products.... International Trade Commission has received a complaint entitled Certain CMOS Image Sensors and Products... importation, and the sale within the United States after importation of certain CMOS image sensors and...

Expansion of CMOS array design techniques

NASA Technical Reports Server (NTRS)

Feller, A.; Ramondetta, P.

1977-01-01

The important features of the multiport (double entry) automatic placement and routing programs for standard cells are described. Measured performance and predicted performance were compared for seven CMOS/SOS array types and hybrids designed with the high speed CMOS/SOS cell family. The CMOS/SOS standard cell data sheets are listed and described.

Hybrid CMOS/Molecular Integrated Circuits

NASA Astrophysics Data System (ADS)

Stan, M. R.; Rose, G. S.; Ziegler, M. M.

CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

Two-layer wireless distributed sensor/control network based on RF

NASA Astrophysics Data System (ADS)

Feng, Li; Lin, Yuchi; Zhou, Jingjing; Dong, Guimei; Xia, Guisuo

2006-11-01

A project of embedded Wireless Distributed Sensor/Control Network (WDSCN) based on RF is presented after analyzing the disadvantages of traditional measure and control system. Because of high-cost and complexity, such wireless techniques as Bluetooth and WiFi can't meet the needs of WDSCN. The two-layer WDSCN is designed based on RF technique, which operates in the ISM free frequency channel with low power and high transmission speed. Also the network is low cost, portable and moveable, integrated with the technologies of computer network, sensor, microprocessor and wireless communications. The two-layer network topology is selected in the system; a simple but efficient self-organization net protocol is designed to fit the periodic data collection, event-driven and store-and-forward. Furthermore, adaptive frequency hopping technique is adopted for anti-jamming apparently. The problems about power reduction and synchronization of data in wireless system are solved efficiently. Based on the discussion above, a measure and control network is set up to control such typical instruments and sensors as temperature sensor and signal converter, collect data, and monitor environmental parameters around. This system works well in different rooms. Experiment results show that the system provides an efficient solution to WDSCN through wireless links, with high efficiency, low power, high stability, flexibility and wide working range.

12 CFR 703.16 - Prohibited investments.

Code of Federal Regulations, 2013 CFR

2013-01-01

... CMOs) representing beneficial ownership interests in one or more interest-only classes of a CMO (IO CMOs) or principal-only classes of a CMO (PO CMOs), but only if: (i) At the time of purchase, the ratio... underlying non-IO CMOs, and that the principal on each underlying PO CMO should decline at the same rate as...

12 CFR 703.16 - Prohibited investments.

Code of Federal Regulations, 2014 CFR

2014-01-01

... CMOs) representing beneficial ownership interests in one or more interest-only classes of a CMO (IO CMOs) or principal-only classes of a CMO (PO CMOs), but only if: (i) At the time of purchase, the ratio... underlying non-IO CMOs, and that the principal on each underlying PO CMO should decline at the same rate as...

All-CMOS night vision viewer with integrated microdisplay

NASA Astrophysics Data System (ADS)

Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

2014-02-01

The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

A reliable ground bounce noise reduction technique for nanoscale CMOS circuits

NASA Astrophysics Data System (ADS)

Sharma, Vijay Kumar; Pattanaik, Manisha

2015-11-01

Power gating is the most effective method to reduce the standby leakage power by adding header/footer high-VTH sleep transistors between actual and virtual power/ground rails. When a power gating circuit transitions from sleep mode to active mode, a large instantaneous charge current flows through the sleep transistors. Ground bounce noise (GBN) is the high voltage fluctuation on real ground rail during sleep mode to active mode transitions of power gating circuits. GBN disturbs the logic states of internal nodes of circuits. A novel and reliable power gating structure is proposed in this article to reduce the problem of GBN. The proposed structure contains low-VTH transistors in place of high-VTH footer. The proposed power gating structure not only reduces the GBN but also improves other performance metrics. A large mitigation of leakage power in both modes eliminates the need of high-VTH transistors. A comprehensive and comparative evaluation of proposed technique is presented in this article for a chain of 5-CMOS inverters. The simulation results are compared to other well-known GBN reduction circuit techniques at 22 nm predictive technology model (PTM) bulk CMOS model using HSPICE tool. Robustness against process, voltage and temperature (PVT) variations is estimated through Monte-Carlo simulations.

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Dutta, Shibesh; Ramesh, Sivaramakrishnan; Prathapan, Ragesh; Sreehari G., S.

2017-07-01

As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field.