Efficient dynamic coherence transfer relying on offset locking using optical phase-locked loop

NASA Astrophysics Data System (ADS)

Xie, Weilin; Dong, Yi; Bretenaker, Fabien; Shi, Hongxiao; Zhou, Qian; Xia, Zongyang; Qin, Jie; Zhang, Lin; Lin, Xi; Hu, Weisheng

2018-01-01

We design and experimentally demonstrate a highly efficient coherence transfer based on composite optical phaselocked loop comprising multiple feedback servo loops. The heterodyne offset-locking is achieved by conducting an acousto-optic frequency shifter in combination with the current tuning and the temperature controlling of the semiconductor laser. The adaptation of the composite optical phase-locked loop enables the tight coherence transfer from a frequency comb to a semiconductor laser in a fully dynamic manner.

Coherent response of a semiconductor microcavity in the strong coupling regime

NASA Astrophysics Data System (ADS)

Cassabois, G.; Triques, A. L. C.; Ferreira, R.; Delalande, C.; Roussignol, Ph; Bogani, F.

2000-05-01

We have studied the coherent dynamics of a semiconductor microcavity by means of interferometric correlation measurements with subpicosecond time resolution in a backscattering geometry. Evidence is brought of the resolution of a homogeneous polariton line in an inhomogeneously broadened exciton system. Surprisingly, photon-like polaritons exhibit an inhomogeneous dephasing. Moreover, we observe an unexpected stationary coherence up to 8 ps for the lower polariton branch close to resonance. All these experimental results are well reproduced within the framework of a linear dispersion theory assuming a coherent superposition of the reflectivity and resonant Rayleigh scattering signals with a well-defined relative phase.

Coherent acoustic phonons in nanostructures

NASA Astrophysics Data System (ADS)

Dekorsy, T.; Taubert, R.; Hudert, F.; Bartels, A.; Habenicht, A.; Merkt, F.; Leiderer, P.; Köhler, K.; Schmitz, J.; Wagner, J.

2008-02-01

Phonons are considered as a most important origin of scattering and dissipation for electronic coherence in nanostructures. The generation of coherent acoustic phonons with femtosecond laser pulses opens the possibility to control phonon dynamics in amplitude and phase. We demonstrate a new experimental technique based on two synchronized femtosecond lasers with GHz repetition rate to study the dynamics of coherently generated acoustic phonons in semiconductor heterostructures with high sensitivity. High-speed synchronous optical sampling (ASOPS) enables to scan a time-delay of 1 ns with 100 fs time resolution with a frequency in the kHz range without a moving part in the set-up. We investigate the dynamics of coherent zone-folded acoustic phonons in semiconductor superlattices (GaAs/AlAs and GaSb/InAs) and of coherent vibration of metallic nanostructures of non-spherical shape using ASOPS.

Coherence switching of a vertical-cavity semiconductor-laser for multimode biomedical imaging (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cao, Hui; Knitter, Sebastian; Liu, Changgeng; Redding, Brandon; Khokha, Mustafa Kezar; Choma, Michael Andrew

2017-02-01

Speckle formation is a limiting factor when using coherent sources for imaging and sensing, but can provide useful information about the motion of an object. Illumination sources with tunable spatial coherence are therefore desirable as they can offer both speckled and speckle-free images. Efficient methods of coherence switching have been achieved with a solid-state degenerate laser, and here we demonstrate a semiconductor-based degenerate laser system that can be switched between a large number of mutually incoherent spatial modes and few-mode operation. Our system is designed around a semiconductor gain element, and overcomes barriers presented by previous low spatial coherence lasers. The gain medium is an electrically-pumped vertical external cavity surface emitting laser (VECSEL) with a large active area. The use of a degenerate external cavity enables either distributing the laser emission over a large ( 1000) number of mutually incoherent spatial modes or concentrating emission to few modes by using a pinhole in the Fourier plane of the self-imaging cavity. To demonstrate the unique potential of spatial coherence switching for multimodal biomedical imaging, we use both low and high spatial coherence light generated by our VECSEL-based degenerate laser for imaging embryo heart function in Xenopus, an important animal model of heart disease. The low-coherence illumination is used for high-speed (100 frames per second) speckle-free imaging of dynamic heart structure, while the high-coherence emission is used for laser speckle contrast imaging of the blood flow.

Coherent diffractive imaging methods for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

2017-12-01

The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

DOE PAGES

Kim, Dohun; Ward, D. R.; Simmons, C. B.; ...

2015-02-16

An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less

Julius Edgar Lilienfeld Prize Talk: Quantum spintronics: abandoning perfection for new technologies

NASA Astrophysics Data System (ADS)

Awschalom, David D.

2015-03-01

There is a growing interest in exploiting the quantum properties of electronic and nuclear spins for the manipulation and storage of information in the solid state. Such schemes offer qualitatively new scientific and technological opportunities by leveraging elements of standard electronics to precisely control coherent interactions between electrons, nuclei, and electromagnetic fields. We provide an overview of the field, including a discussion of temporally- and spatially-resolved magneto-optical measurements designed for probing local moment dynamics in electrically and magnetically doped semiconductor nanostructures. These early studies provided a surprising proof-of-concept that quantum spin states can be created and controlled with high-speed optoelectronic techniques. However, as electronic structures approach the atomic scale, small amounts of disorder begin to have outsized negative effects. An intriguing solution to this conundrum is emerging from recent efforts to embrace semiconductor defects themselves as a route towards quantum machines. Individual defects in carbon-based materials possess an electronic spin state that can be employed as a solid state quantum bit at and above room temperature. Developments at the frontier of this field include gigahertz coherent control, nanofabricated spin arrays, nuclear spin quantum memories, and nanometer-scale sensing. We will describe advances towards quantum information processing driven by both physics and materials science to explore electronic, photonic, and magnetic control of spin. Work supported by the AFOSR, ARO, DARPA, NSF, and ONR.

Nuclear-driven electron spin rotations in a coupled silicon quantum dot and single donor system

NASA Astrophysics Data System (ADS)

Harvey-Collard, Patrick; Jacobson, Noah Tobias; Rudolph, Martin; Ten Eyck, Gregory A.; Wendt, Joel R.; Pluym, Tammy; Lilly, Michael P.; Pioro-Ladrière, Michel; Carroll, Malcolm S.

Single donors in silicon are very good qubits. However, a central challenge is to couple them to one another. To achieve this, many proposals rely on using a nearby quantum dot (QD) to mediate an interaction. In this work, we demonstrate the coherent coupling of electron spins between a single 31P donor and an enriched 28Si metal-oxide-semiconductor few-electron QD. We show that the electron-nuclear spin interaction can drive coherent rotations between singlet and triplet electron spin states. Moreover, we are able to tune electrically the exchange interaction between the QD and donor electrons. The combination of single-nucleus-driven rotations and voltage-tunable exchange provides all elements for future all-electrical control of a spin qubit, and requires only a single dot and no additional magnetic field gradients. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Charge and spin dynamics driven by ultrashort extreme broadband pulses: A theory perspective

NASA Astrophysics Data System (ADS)

Moskalenko, Andrey S.; Zhu, Zhen-Gang; Berakdar, Jamal

2017-02-01

This article gives an overview on recent theoretical progress in controlling the charge and spin dynamics in low-dimensional electronic systems by means of ultrashort and ultrabroadband electromagnetic pulses. A particular focus is put on sub-cycle and single-cycle pulses and their utilization for coherent control. The discussion is mostly limited to cases where the pulse duration is shorter than the characteristic time scales associated with the involved spectral features of the excitations. The relevant current theoretical knowledge is presented in a coherent, pedagogic manner. We work out that the pulse action amounts in essence to a quantum map between the quantum states of the system at an appropriately chosen time moment during the pulse. The influence of a particular pulse shape on the post-pulse dynamics is reduced to several integral parameters entering the expression for the quantum map. The validity range of this reduction scheme for different strengths of the driving fields is established and discussed for particular nanostructures. Acting with a periodic pulse sequence, it is shown how the system can be steered to and largely maintained in predefined states. The conditions for this nonequilibrium sustainability are worked out by means of geometric phases, which are identified as the appropriate quantities to indicate quasistationarity of periodically driven quantum systems. Demonstrations are presented for the control of the charge, spin, and valley degrees of freedom in nanostructures on picosecond and subpicosecond time scales. The theory is illustrated with several applications to one-dimensional semiconductor quantum wires and superlattices, double quantum dots, semiconductor and graphene quantum rings. In the case of a periodic pulsed driving the influence of the relaxation and decoherence processes is included by utilizing the density matrix approach. The integrated and time-dependent spectra of the light emitted from the driven system deliver information on its spin-dependent dynamics. We review examples of such spectra of photons emitted from pulse-driven nanostructures as well as a possibility to characterize and control the light polarization on an ultrafast time scale. Furthermore, we consider the response of strongly correlated systems to short broadband pulses and show that this case bears a great potential to unveil high order correlations while they build up upon excitations.

A high-power fiber-coupled semiconductor light source with low spatio-temporal coherence

NASA Astrophysics Data System (ADS)

Schittko, Robert; Mazurenko, Anton; Tai, M. Eric; Lukin, Alexander; Rispoli, Matthew; Menke, Tim; Kaufman, Adam M.; Greiner, Markus

2017-04-01

Interference-induced distortions pose a significant challenge to a variety of experimental techniques, ranging from full-field imaging applications in biological research to the creation of optical potentials in quantum gas microscopy. Here, we present a design of a high-power, fiber-coupled semiconductor light source with low spatio-temporal coherence that bears the potential to reduce the impact of such distortions. The device is based on an array of non-lasing semiconductor emitters mounted on a single chip whose optical output is coupled into a multi-mode fiber. By populating a large number of fiber modes, the low spatial coherence of the input light is further reduced due to the differing optical path lengths amongst the modes and the short coherence length of the light. In addition to theoretical calculations showcasing the feasibility of this approach, we present experimental measurements verifying the low degree of spatial coherence achievable with such a source, including a detailed analysis of the speckle contrast at the fiber end. We acknowledge support from the National Science Foundation, the Gordon and Betty Moore Foundation's EPiQS Initiative, an Air Force Office of Scientific Research MURI program and an Army Research Office MURI program.

Coherent and incoherent phase stabilities of thermoelectric rocksalt IV-VI semiconductor alloys

NASA Astrophysics Data System (ADS)

Doak, Jeff W.; Wolverton, C.

2012-10-01

Nanostructures formed by phase separation improve the thermoelectric figure of merit in lead chalcogenide semiconductor alloys, with coherent nanostructures giving larger improvements than incoherent nanostructures. However, large coherency strains in these alloys drastically alter the thermodynamics of phase stability. Incoherent phase stability can be easily inferred from an equilibrium phase diagram, but coherent phase stability is more difficult to assess experimentally. Therefore, we use density functional theory calculations to investigate the coherent and incoherent phase stability of the IV-VI rocksalt semiconductor alloy systems Pb(S,Te), Pb(Te,Se), Pb(Se,S), (Pb,Sn)Te, (Sn,Ge)Te, and (Ge,Pb)Te. Here we use the term coherent to indicate that there is a common and unbroken lattice between the phases under consideration, and we use the term incoherent to indicate that the lattices of coexisting phases are unconstrained and allowed to take on equilibrium volumes. We find that the thermodynamic ground state of all of the IV-VI pseudobinary systems studied is incoherent phase separation. We also find that the coherency strain energy, previously neglected in studies of these IV-VI alloys, is lowest along [111] (in contrast to most fcc metals) and is a large fraction of the thermodynamic driving force for incoherent phase separation in all systems. The driving force for coherent phase separation is significantly reduced, and we find that coherent nanostructures can only form at low temperatures where kinetics may prohibit their precipitation. Furthermore, by calculating the energies of ordered structures for these systems we find that the coherent phase stability of most IV-VI systems favors ordering over spinodal decomposition. Our results suggest that experimental reports of spinodal decomposition in the IV-VI rocksalt alloys should be re-examined.

Charge carrier coherence and Hall effect in organic semiconductors.

PubMed

Yi, H T; Gartstein, Y N; Podzorov, V

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

Topological order and thermal equilibrium in polariton condensates

NASA Astrophysics Data System (ADS)

Caputo, Davide; Ballarini, Dario; Dagvadorj, Galbadrakh; Sánchez Muñoz, Carlos; de Giorgi, Milena; Dominici, Lorenzo; West, Kenneth; Pfeiffer, Loren N.; Gigli, Giuseppe; Laussy, Fabrice P.; Szymańska, Marzena H.; Sanvitto, Daniele

2018-02-01

The Berezinskii-Kosterlitz-Thouless phase transition from a disordered to a quasi-ordered state, mediated by the proliferation of topological defects in two dimensions, governs seemingly remote physical systems ranging from liquid helium, ultracold atoms and superconducting thin films to ensembles of spins. Here we observe such a transition in a short-lived gas of exciton-polaritons, bosonic light-matter particles in semiconductor microcavities. The observed quasi-ordered phase, characteristic for an equilibrium two-dimensional bosonic gas, with a decay of coherence in both spatial and temporal domains with the same algebraic exponent, is reproduced with numerical solutions of stochastic dynamics, proving that the mechanism of pairing of the topological defects (vortices) is responsible for the transition to the algebraic order. This is made possible thanks to long polariton lifetimes in high-quality samples and in a reservoir-free region. Our results show that the joint measurement of coherence both in space and time is required to characterize driven-dissipative phase transitions and enable the investigation of topological ordering in open systems.

Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2.

PubMed

Cui, Qiannan; Zhao, Hui

2015-04-28

Transition metal dichalcogenides are predicted to outperform traditional semiconductors in ballistic devices with nanoscale channel lengths. So far, experimental studies on charge transport in transition metal dichalcogenides are limited to the diffusive regime. Here we show, using ReS2 as an example, all-optical injection, detection, and coherent control of ballistic currents. By utilizing quantum interference between one-photon and two-photon interband transition pathways, ballistic currents are injected in ReS2 thin film samples by a pair of femtosecond laser pulses. We find that the current decays on an ultrafast time scale, resulting in an electron transport of only a fraction of one nanometer. Following the relaxation of the initially injected momentum, backward motion of the electrons for about 1 ps is observed, driven by the Coulomb force from the oppositely moved holes. We also show that the injected current can be controlled by the phase of the laser pulses. These results demonstrate a new platform to study ballistic transport of nonequilibrium carriers in transition metal dichalcogenides.

Power combining of semiconductor lasers: A review

NASA Technical Reports Server (NTRS)

Katz, J.

1982-01-01

Several methods of coherent power combining are described and compared. A comparison is also made between coherent and incoherent power combining, and important operational characteristics are considered. It is found that in communication links with demanding requirements coherent power combining is necessary.

Strongly exchange-coupled triplet pairs in an organic semiconductor

NASA Astrophysics Data System (ADS)

Weiss, Leah R.; Bayliss, Sam L.; Kraffert, Felix; Thorley, Karl J.; Anthony, John E.; Bittl, Robert; Friend, Richard H.; Rao, Akshay; Greenham, Neil C.; Behrends, Jan

2017-02-01

From biological complexes to devices based on organic semiconductors, spin interactions play a key role in the function of molecular systems. For instance, triplet-pair reactions impact operation of organic light-emitting diodes as well as photovoltaic devices. Conventional models for triplet pairs assume they interact only weakly. Here, using electron spin resonance, we observe long-lived, strongly interacting triplet pairs in an organic semiconductor, generated via singlet fission. Using coherent spin manipulation of these two-triplet states, we identify exchange-coupled (spin-2) quintet complexes coexisting with weakly coupled (spin-1) triplets. We measure strongly coupled pairs with a lifetime approaching 3 μs and a spin coherence time approaching 1 μs, at 10 K. Our results pave the way for the utilization of high-spin systems in organic semiconductors.

Applications of Optical Coherent Transient Technology to Pulse Shaping, Spectral Filtering, Arbitrary Waveform Generation and RF Beamforming

DTIC Science & Technology

2006-04-15

was amplified by injection locking of a high power diode laser and further amplified to -300 mW with a semiconductor optical amplifier. This light...amplifiers at 793nm, cascaded injection locked amplifiers at 793nm, and frequency chirped lasers at 793nm. 15. SUBJECT TERMS Optical Coherent Transients...injection- locking for broadband optical signal amplification ................. 34 2.10. Tapered semiconductor optical amplifier

Dynamics of charge-transfer excitons in type-II semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Stein, M.; Lammers, C.; Richter, P.-H.; Fuchs, C.; Stolz, W.; Koch, M.; Vänskä, O.; Weseloh, M. J.; Kira, M.; Koch, S. W.

2018-03-01

The formation, decay, and coherence properties of charge-transfer excitons in semiconductor heterostructures are investigated by applying four-wave-mixing and terahertz spectroscopy in combination with a predictive microscopic theory. A charge-transfer process is identified where the optically induced coherences decay directly into a charge-transfer electron-hole plasma and exciton states. It is shown that charge-transfer excitons are more sensitive to the fermionic electron-hole substructure than regular excitons.

Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

DOE PAGES

Tilka, J. A.; Park, J.; Ahn, Y.; ...

2016-07-06

Here, the highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent xray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patternsmore » of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.« less

Cavity-Mediated Coherent Coupling between Distant Quantum Dots

NASA Astrophysics Data System (ADS)

Nicolí, Giorgio; Ferguson, Michael Sven; Rössler, Clemens; Wolfertz, Alexander; Blatter, Gianni; Ihn, Thomas; Ensslin, Klaus; Reichl, Christian; Wegscheider, Werner; Zilberberg, Oded

2018-06-01

Scalable architectures for quantum information technologies require one to selectively couple long-distance qubits while suppressing environmental noise and cross talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated, long-distance coupling effectively minimizes undesirable direct cross talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.

Customer-Driven Reliability Models for Multistate Coherent Systems

DTIC Science & Technology

1992-01-01

AENCYUSEONLY(Leae bank)2. RPO- COVERED 1 11992DISSERTATION 4. TITLE AND SUBTITLE 5. FUNDING NUMBERS Customer -Driven Reliability Models For Multistate Coherent...UNIVERSITY OF OKLAHOMA GRADUATE COLLEGE CUSTOMER -DRIVEN RELIABILITY MODELS FOR MULTISTATE COHERENT SYSTEMS A DISSERTATION SUBMITTED TO THE GRADUATE FACULTY...BOEDIGHEIMER I Norman, Oklahoma Distribution/ Av~ilability Codes 1992 A vil andior Dist Special CUSTOMER -DRIVEN RELIABILITY MODELS FOR MULTISTATE

Adaptive Quantum Control of Charge Motion in Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Reitze, David

1998-05-01

Quantum control of electronic wavepacket motion and interactions using ultrafast lasers has moved from the conceptual stage to reality, in large part driven by advances in quantum control theory (R. J. Gordon and S. A. Rice, Ann. Rev. Phys. Chem. (1997), in press.) (M. Shapiro and P. Brumer, J. Chem. Soc. Faraday Trans. V93, 1263 (1997).) (D. Neuhauser and H. Rabitz, Acc. Chem. Res. V26, 496 (1993).) and experimental pulse shaping methods (A. M. Weiner, D. E. Leaird, G. P. Wiederrecht, and K. A. Nelson, Science V247, 412 (1990).) (A. Efimov, C. Schaffer, and D. H. Reitze, J. Opt. Soc. Am VB12, 1968 (1995).). Here, we apply these methods to controlling charge motion in semiconductor heterostructures. Control of coherent charge dynamics in heterostructures enjoys an advantage in that spatial potential profiles can be adjusted almost arbitrarily. Thus, control of charge motion can be exerted by tailoring both the temporal and spatial interactions of the charges with the controlling optical and static fields. In this talk, we demonstrate an experimental feedback loop which adaptively shapes fs pulses in a quantum contol pump-probe experiment, apply it to the control of coherent wavepacket motion in DC-biased asymmetric double quantum well(ADQW) structures, and compare to theoretical predictions of quantum control in ADQWs (N. M. Beach, D. H. Reitze, and J. L. Krause, submitted to Opt. Exp.) (J. L. Krause, D. H. Reitze, G. D. Sanders, A. Kuznetsov, and C. J. Stanton, to appear in Phys. Rev. B).

Charge carrier coherence and Hall effect in organic semiconductors

DOE PAGES

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

Charge carrier coherence and Hall effect in organic semiconductors

PubMed Central

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-01-01

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

Light-field-driven currents in graphene

NASA Astrophysics Data System (ADS)

Higuchi, Takuya; Heide, Christian; Ullmann, Konrad; Weber, Heiko B.; Hommelhoff, Peter

2017-10-01

The ability to steer electrons using the strong electromagnetic field of light has opened up the possibility of controlling electron dynamics on the sub-femtosecond (less than 10-15 seconds) timescale. In dielectrics and semiconductors, various light-field-driven effects have been explored, including high-harmonic generation, sub-optical-cycle interband population transfer and the non-perturbative change of the transient polarizability. In contrast, much less is known about light-field-driven electron dynamics in narrow-bandgap systems or in conductors, in which screening due to free carriers or light absorption hinders the application of strong optical fields. Graphene is a promising platform with which to achieve light-field-driven control of electrons in a conducting material, because of its broadband and ultrafast optical response, weak screening and high damage threshold. Here we show that a current induced in monolayer graphene by two-cycle laser pulses is sensitive to the electric-field waveform, that is, to the exact shape of the optical carrier field of the pulse, which is controlled by the carrier-envelope phase, with a precision on the attosecond (10-18 seconds) timescale. Such a current, dependent on the carrier-envelope phase, shows a striking reversal of the direction of the current as a function of the driving field amplitude at about two volts per nanometre. This reversal indicates a transition of light-matter interaction from the weak-field (photon-driven) regime to the strong-field (light-field-driven) regime, where the intraband dynamics influence interband transitions. We show that in this strong-field regime the electron dynamics are governed by sub-optical-cycle Landau-Zener-Stückelberg interference, composed of coherent repeated Landau-Zener transitions on the femtosecond timescale. Furthermore, the influence of this sub-optical-cycle interference can be controlled with the laser polarization state. These coherent electron dynamics in graphene take place on a hitherto unexplored timescale, faster than electron-electron scattering (tens of femtoseconds) and electron-phonon scattering (hundreds of femtoseconds). We expect these results to have direct ramifications for band-structure tomography and light-field-driven petahertz electronics.

Light-field-driven currents in graphene.

PubMed

Higuchi, Takuya; Heide, Christian; Ullmann, Konrad; Weber, Heiko B; Hommelhoff, Peter

2017-10-12

The ability to steer electrons using the strong electromagnetic field of light has opened up the possibility of controlling electron dynamics on the sub-femtosecond (less than 10 -15 seconds) timescale. In dielectrics and semiconductors, various light-field-driven effects have been explored, including high-harmonic generation, sub-optical-cycle interband population transfer and the non-perturbative change of the transient polarizability. In contrast, much less is known about light-field-driven electron dynamics in narrow-bandgap systems or in conductors, in which screening due to free carriers or light absorption hinders the application of strong optical fields. Graphene is a promising platform with which to achieve light-field-driven control of electrons in a conducting material, because of its broadband and ultrafast optical response, weak screening and high damage threshold. Here we show that a current induced in monolayer graphene by two-cycle laser pulses is sensitive to the electric-field waveform, that is, to the exact shape of the optical carrier field of the pulse, which is controlled by the carrier-envelope phase, with a precision on the attosecond (10 -18 seconds) timescale. Such a current, dependent on the carrier-envelope phase, shows a striking reversal of the direction of the current as a function of the driving field amplitude at about two volts per nanometre. This reversal indicates a transition of light-matter interaction from the weak-field (photon-driven) regime to the strong-field (light-field-driven) regime, where the intraband dynamics influence interband transitions. We show that in this strong-field regime the electron dynamics are governed by sub-optical-cycle Landau-Zener-Stückelberg interference, composed of coherent repeated Landau-Zener transitions on the femtosecond timescale. Furthermore, the influence of this sub-optical-cycle interference can be controlled with the laser polarization state. These coherent electron dynamics in graphene take place on a hitherto unexplored timescale, faster than electron-electron scattering (tens of femtoseconds) and electron-phonon scattering (hundreds of femtoseconds). We expect these results to have direct ramifications for band-structure tomography and light-field-driven petahertz electronics.

External Cavity Coherent Transmitter Modules

DTIC Science & Technology

1990-11-01

Lasers 141 Tunability Aspects of DFB External Cavity Semiconductor Lasers Harish R. D. Sunak & Clark P. Engert Fiber Optical Communications Laboratory...Linewidth Considerations for DFB External Cavity Semiconductor Lasers Harish R. D. Sunak & Clark P. Engert Fiber Optical Communications Laboratory

Carrier States in Ferromagnetic Semiconductors and Diluted Magnetic Semiconductors—Coherent Potential Approach—

PubMed Central

Takahashi, Masao

2010-01-01

The theoretical study of magnetic semiconductors using the dynamical coherent potential approximation (dynamical CPA) is briefly reviewed. First, we give the results for ferromagnetic semiconductors (FMSs) such as EuO and EuS by applying the dynamical CPA to the s-f model. Next, applying the dynamical CPA to a simple model for A1−xMnxB-type diluted magnetic semiconductors (DMSs), we show the results for three typical cases to clarify the nature and properties of the carrier states in DMSs. On the basis of this model, we discuss the difference in the optical band edges between II-V DMSs and III-V-based DMSs, and show that two types of ferromagnetism can occur in DMSs when carriers are introduced. The carrier-induced ferromagnetism of Ga1−xMnxAs is ascribed to a double-exchange (DE)-like mechanism realized in the magnetic impurity band/or in the band tail.

Multi-dimensional coherent optical spectroscopy of semiconductor nanostructures: Collinear and non-collinear approaches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nardin, Gaël; Li, Hebin; Autry, Travis M.

2015-03-21

We review our recent work on multi-dimensional coherent optical spectroscopy (MDCS) of semiconductor nanostructures. Two approaches, appropriate for the study of semiconductor materials, are presented and compared. A first method is based on a non-collinear geometry, where the Four-Wave-Mixing (FWM) signal is detected in the form of a radiated optical field. This approach works for samples with translational symmetry, such as Quantum Wells (QWs) or large and dense ensembles of Quantum Dots (QDs). A second method detects the FWM in the form of a photocurrent in a collinear geometry. This second approach extends the horizon of MDCS to sub-diffraction nanostructures,more » such as single QDs, nanowires, or nanotubes, and small ensembles thereof. Examples of experimental results obtained on semiconductor QW structures are given for each method. In particular, it is shown how MDCS can assess coupling between excitons confined in separated QWs.« less

Semiconductor Nonlinear Dynamics Study by Broadband Terahertz Spectroscopy

NASA Astrophysics Data System (ADS)

Ho, I.-Chen

Semiconductor nonlinearity in the terahertz (THz) frequency range has been attracting considerable attention due to the recent development of high-power semiconductor-based nanodevices. However, the underlying physics concerning carrier dynamics in the presence of high-field THz transients is still obscure. This thesis introduces an ultrafast, time-resolved THz pump/THz probe approach to the study of semiconductor properties in the nonlinear regime. The carrier dynamics regarding two mechanisms, intervalley scattering and impact ionization, is observed for doped InAs on a sub-picosecond time scale. In addition, polaron modulation driven by intense THz pulses is experimentally and theoretically investigated. The observed polaron dynamics verifies the interaction between energetic electrons and a phonon field. In contrast to previous work which reports optical phonon responses, acoustic phonon modulations are addressed in this study. A further understanding of the intense field interacting with solid materials will accelerate the development of semiconductor devices. This thesis starts with the design and performance of a table-top THz spectrometer which has the advantages of ultra-broad bandwidth (one order higher bandwidth compared to a conventional ZnTe sensor) and high electric field strength (>100 kV/cm). Unlike the conventional THz time-domain spectroscopy, the spectrometer integrates a novel THz air-biased-coherent-detection (THz-ABCD) technique and utilizes selected gases as THz emitters and sensors. In comparison with commonly used electro-optic (EO) crystals or photoconductive (PC) dipole antennas, the gases have the benefits of no phonon absorption as existing in EO crystals and no carrier life time limitation as observed in PC dipole antennas. The newly development THz-ABCD spectrometer with a strong THz field strength capability provides a platform for various research topics especially on the nonlinear carrier dynamics of semiconductors. Two mechanisms, electron intervalley scattering and impact ionization of InAs crystals, are observed under the excitation of intense THz field on a sub-picosecond time scale. These two competing mechanisms are demonstrated by changing the impurity doping type of the semiconductors and varying the strength of the THz field. Another investigation of nonlinear carrier dynamics is the observation of coherent polaron oscillation in n-doped semiconductors excited by intense THz pulses. Through modulations of surface reflection with a THz pump/THz probe technique, this work experimentally verifies the interaction between energetic electrons and a phonon field, which has been theoretically predicted by previous publications, and shows that this interaction applies for the acoustic phonon modes. Usually, two transverse acoustic (2TA) phonon responses are inactive in infrared measurement, while they are detectable in second-order Raman spectroscopy. The study of polaron dynamics, with nonlinear THz spectroscopy (in the far-infrared range), provides a unique method to diagnose the overtones of 2TA phonon responses of semiconductors, and therefore incorporates the abilities of both infrared and Raman spectroscopy. This work presents a new milestone in wave-matter interaction and seeks to benefit the industrial applications in high power, small scale devices.

Coherent manipulation of spontaneous emission spectra in coupled semiconductor quantum well structures.

PubMed

Chen, Aixi

2014-11-03

In triple coupled semiconductor quantum well structures (SQWs) interacting with a coherent driving filed, a coherent coupling field and a weak probe field, spontaneous emission spectra are investigated. Our studies show emission spectra can easily be manipulated through changing the intensity of the driving and coupling field, detuning of the driving field. Some interesting physical phenomena such as spectral-line enhancement/suppression, spectral-line narrowing and spontaneous emission quenching may be obtained in our system. The theoretical studies of spontaneous emission spectra in SQWS have potential application in high-precision spectroscopy. Our studies are based on the real physical system [Appl. Phys. Lett.86(20), 201112 (2005)], and this scheme might be realizable with presently available techniques.

Gatemon Benchmarking and Two-Qubit Operation

NASA Astrophysics Data System (ADS)

Casparis, Lucas; Larsen, Thorvald; Olsen, Michael; Petersson, Karl; Kuemmeth, Ferdinand; Krogstrup, Peter; Nygard, Jesper; Marcus, Charles

Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability singular to semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemon circuit. We characterize qubit coherence and stability and use randomized benchmarking to demonstrate single-qubit gate errors of ~0.5 % for all gates, including voltage-controlled Z rotations. We show coherent capacitive coupling between two gatemons and coherent SWAP operations. Finally, we perform a two-qubit controlled-phase gate with an estimated fidelity of ~91 %, demonstrating the potential of gatemon qubits for building scalable quantum processors. We acknowledge financial support from Microsoft Project Q and the Danish National Research Foundation.

Light sources based on semiconductor current filaments

DOEpatents

Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

2003-01-01

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, M.W.

1990-06-19

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, Mark W.

1990-01-01

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.

PubMed

Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K

2017-08-02

Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

Electric field-induced coherent control in GaAs: polarization dependence and electrical measurement [Invited].

PubMed

Wahlstrand, J K; Zhang, H; Choi, S B; Sipe, J E; Cundiff, S T

2011-11-07

A static electric field enables coherent control of the photoexcited carrier density in a semiconductor through the interference of one- and two-photon absorption. An experiment using optical detection is described. The polarization dependence of the signal is consistent with a calculation using a 14-band k · p model for GaAs. We also describe an electrical measurement. A strong enhancement of the phase-dependent photocurrent through a metal-semiconductor-metal structure is observed when a bias of a few volts is applied. The dependence of the signal on bias and laser spot position is studied. The field-induced enhancement of the signal could increase the sensitivity of semiconductor-based carrier-envelope phase detectors, useful in stabilizing mode-locked lasers for use in frequency combs.

Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

NASA Astrophysics Data System (ADS)

Persano Adorno, Dominique; Pizzolato, Nicola; Fazio, Claudio

2015-09-01

Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model and moving up to reasoned inquiries about the observed characteristics of electron dynamics. Our inquiry-driven learning path, based on numerical simulations, represents a viable example of how to integrate a traditional lecture-based teaching approach with effective learning strategies, providing science or engineering undergraduates with practical opportunities to enhance their comprehension of the physics governing the electron dynamics in semiconductors. Finally, we present a general discussion about the advantages and disadvantages of using an inquiry-based teaching approach within a learning environment based on semiconductor simulations.

One-dimensional polaritons with size-tunable and enhanced coupling strengths in semiconductor nanowires.

PubMed

van Vugt, Lambert K; Piccione, Brian; Cho, Chang-Hee; Nukala, Pavan; Agarwal, Ritesh

2011-06-21

Strong coupling of light with excitons in direct bandgap semiconductors leads to the formation of composite photonic-electronic quasi-particles (polaritons), in which energy oscillates coherently between the photonic and excitonic states with the vacuum Rabi frequency. The light-matter coherence is maintained until the oscillator dephases or the photon escapes. Exciton-polariton formation has enabled the observation of Bose-Einstein condensation in the solid-state, low-threshold polariton lasing and is also useful for terahertz and slow-light applications. However, maintaining coherence for higher carrier concentration and temperature applications still requires increased coupling strengths. Here, we report on size-tunable, exceptionally high exciton-polariton coupling strengths characterized by a vacuum Rabi splitting of up to 200 meV as well as a reduction in group velocity, in surface-passivated, self-assembled semiconductor nanowire cavities. These experiments represent systematic investigations on light-matter coupling in one-dimensional optical nanocavities, demonstrating the ability to engineer light-matter coupling strengths at the nanoscale, even in non-quantum-confined systems, to values much higher than in bulk.

One-dimensional polaritons with size-tunable and enhanced coupling strengths in semiconductor nanowires

PubMed Central

van Vugt, Lambert K.; Piccione, Brian; Cho, Chang-Hee; Nukala, Pavan; Agarwal, Ritesh

2011-01-01

Strong coupling of light with excitons in direct bandgap semiconductors leads to the formation of composite photonic-electronic quasi-particles (polaritons), in which energy oscillates coherently between the photonic and excitonic states with the vacuum Rabi frequency. The light-matter coherence is maintained until the oscillator dephases or the photon escapes. Exciton-polariton formation has enabled the observation of Bose-Einstein condensation in the solid-state, low-threshold polariton lasing and is also useful for terahertz and slow-light applications. However, maintaining coherence for higher carrier concentration and temperature applications still requires increased coupling strengths. Here, we report on size-tunable, exceptionally high exciton-polariton coupling strengths characterized by a vacuum Rabi splitting of up to 200 meV as well as a reduction in group velocity, in surface-passivated, self-assembled semiconductor nanowire cavities. These experiments represent systematic investigations on light-matter coupling in one-dimensional optical nanocavities, demonstrating the ability to engineer light-matter coupling strengths at the nanoscale, even in non-quantum-confined systems, to values much higher than in bulk. PMID:21628582

Programmable and coherent crystallization of semiconductors

PubMed Central

Yu, Liyang; Niazi, Muhammad R.; Ngongang Ndjawa, Guy O.; Li, Ruipeng; Kirmani, Ahmad R.; Munir, Rahim; Balawi, Ahmed H.; Laquai, Frédéric; Amassian, Aram

2017-01-01

The functional properties and technological utility of polycrystalline materials are largely determined by the structure, geometry, and spatial distribution of their multitude of crystals. However, crystallization is seeded through stochastic and incoherent nucleation events, limiting the ability to control or pattern the microstructure, texture, and functional properties of polycrystalline materials. We present a universal approach that can program the microstructure of materials through the coherent seeding of otherwise stochastic homogeneous nucleation events. The method relies on creating topographic variations to seed nucleation and growth at designated locations while delaying nucleation elsewhere. Each seed can thus produce a coherent growth front of crystallization with a geometry designated by the shape and arrangement of seeds. Periodic and aperiodic crystalline arrays of functional materials, such as semiconductors, can thus be created on demand and with unprecedented sophistication and ease by patterning the location and shape of the seeds. This approach is used to demonstrate printed arrays of organic thin-film transistors with remarkable performance and reproducibility owing to their demonstrated spatial control over the microstructure of organic and inorganic polycrystalline semiconductors. PMID:28275737

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V

Synthesis of semiconductor nanomaterials by low-cost, solution-based methods is shown to lead to new classes of thin film light emitting materials. These materials have been integrated to demonstrative compact laser device testbeds to illustrate their potential for coherent emitters across the visible spectrum to disrupt established photonics technologies, particularly semiconductor lasers?

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

PubMed Central

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A. Douglas; Choma, Michael A.; Cao, Hui

2015-01-01

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging.

PubMed

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A Douglas; Choma, Michael A; Cao, Hui

2015-02-03

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.

Semiconductor technology program: Progress briefs

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Scace, R. I.; Walters, E. J.

1981-01-01

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

To what extent is coherence lost in tissue?

NASA Astrophysics Data System (ADS)

Hode, Tomas; Jenkins, Peter; Jordison, Stefan; Hode, Lars

2011-03-01

In a series of experiments we investigated the extent to which coherence is preserved in tissue. We investigated whether the decrease in coherence length is dependent upon the coherence length of the illuminating light and possibly also if the light is polarized. We compared highly coherent light from a HeNe laser, and less coherent light from a semiconductor laser, in scattering media such as raw ground beef. We studied the laser speckle contrast after passing through 1 - 2 cm of meat. The conclusion is that the laser light is still coherent enough to form laser speckles after passing through a 2 cm thickness of meat.

Controlled Quantum Operations of a Semiconductor Three-Qubit System

NASA Astrophysics Data System (ADS)

Li, Hai-Ou; Cao, Gang; Yu, Guo-Dong; Xiao, Ming; Guo, Guang-Can; Jiang, Hong-Wen; Guo, Guo-Ping

2018-02-01

In a specially designed semiconductor device consisting of three capacitively coupled double quantum dots, we achieve strong and tunable coupling between a target qubit and two control qubits. We demonstrate how to completely switch on and off the target qubit's coherent rotations by presetting two control qubits' states. A Toffoli gate is, therefore, possible based on these control effects. This research paves a way for realizing full quantum-logic operations in semiconductor multiqubit systems.

Confocal shift interferometry of coherent emission from trapped dipolar excitons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repp, J.; Nanosystems Initiative Munich; Center for NanoScience and Fakultät für Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539 München

2014-12-15

We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic emission coincides with the point spread function of the confocal setup. The results are consistent with a temporal coherence of the excitonic emission down to temperatures of 250 mK.

Coherent tools for physics-based simulation and characterization of noise in semiconductor devices oriented to nonlinear microwave circuit CAD

NASA Astrophysics Data System (ADS)

Riah, Zoheir; Sommet, Raphael; Nallatamby, Jean C.; Prigent, Michel; Obregon, Juan

2004-05-01

We present in this paper a set of coherent tools for noise characterization and physics-based analysis of noise in semiconductor devices. This noise toolbox relies on a low frequency noise measurement setup with special high current capabilities thanks to an accurate and original calibration. It relies also on a simulation tool based on the drift diffusion equations and the linear perturbation theory, associated with the Green's function technique. This physics-based noise simulator has been implemented successfully in the Scilab environment and is specifically dedicated to HBTs. Some results are given and compared to those existing in the literature.

Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

Coexistence of ultra-long spin relaxation time and coherent charge transport in organic single-crystal semiconductors

NASA Astrophysics Data System (ADS)

Tsurumi, Junto; Matsui, Hiroyuki; Kubo, Takayoshi; Häusermann, Roger; Mitsui, Chikahiko; Okamoto, Toshihiro; Watanabe, Shun; Takeya, Jun

2017-10-01

Coherent charge transport can occur in organic semiconductor crystals thanks to the highly periodic electrostatic potential--despite the weak van der Waals bonds. And as spin-orbit coupling is usually weak in organic materials, robust spin transport is expected, which is essential if they are to be exploited for spintronic applications. In such systems, momentum relaxation occurs via scattering events, which enables an intrinsic mobility to be defined for band-like charge transport, which is >10 cm2 V-1 s-1. In contrast, there are relatively few experimental studies of the intrinsic spin relaxation for organic band-transport systems. Here, we demonstrate that the intrinsic spin relaxation in organic semiconductors is also caused by scattering events, with much less frequency than the momentum relaxation. Magnetotransport measurements and electron spin resonance spectroscopy consistently show a linear relationship between the two relaxation times over a wide temperature range, clearly manifesting the Elliott-Yafet type of spin relaxation mechanism. The coexistence of an ultra-long spin lifetime of milliseconds and the coherent band-like transport, resulting in a micrometre-scale spin diffusion length, constitutes a key step towards realizing spintronic devices based on organic single crystals.

Weak Localization of Light in a Disordered Microcavity

NASA Astrophysics Data System (ADS)

Gurioli, M.; Bogani, F.; Cavigli, L.; Gibbs, H.; Khitrova, G.; Wiersma, D. S.

2005-05-01

We report the observation of weak localization of light in a semiconductor microcavity. The intrinsic disorder in a microcavity leads to multiple scattering and hence to static speckle. We show that averaging over realizations of the disorder reveals a coherent backscattering cone that has a coherent enhancement factor ≥2, as required by reciprocity. The coherent backscattering cone is observed along a ring-shaped pattern due to confinement by the microcavity.

Topological solitons as addressable phase bits in a driven laser

NASA Astrophysics Data System (ADS)

Garbin, Bruno; Javaloyes, Julien; Tissoni, Giovanna; Barland, Stéphane

2015-01-01

Optical localized states are usually defined as self-localized bistable packets of light, which exist as independently controllable optical intensity pulses either in the longitudinal or transverse dimension of nonlinear optical systems. Here we demonstrate experimentally and analytically the existence of longitudinal localized states that exist fundamentally in the phase of laser light. These robust and versatile phase bits can be individually nucleated and canceled in an injection-locked semiconductor laser operated in a neuron-like excitable regime and submitted to delayed feedback. The demonstration of their control opens the way to their use as phase information units in next-generation coherent communication systems. We analyse our observations in terms of a generic model, which confirms the topological nature of the phase bits and discloses their formal but profound analogy with Sine-Gordon solitons.

Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits

NASA Astrophysics Data System (ADS)

Crippa, Alessandro; Maurand, Romain; Bourdet, Léo; Kotekar-Patil, Dharmraj; Amisse, Anthony; Jehl, Xavier; Sanquer, Marc; Laviéville, Romain; Bohuslavskyi, Heorhii; Hutin, Louis; Barraud, Sylvain; Vinet, Maud; Niquet, Yann-Michel; De Franceschi, Silvano

2018-03-01

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g -matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.

Opto-valleytronic imaging of atomically thin semiconductors

DOE PAGES

Neumann, Andre; Lindlau, Jessica; Colombier, Léo; ...

2017-01-16

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular motion and associated valley polarization and valley coherence as key elements of opto-valleytronic functionality. Here, we introduce two-dimensional polarimetry as means of direct imaging of the valley pseudospin degree of freedom in monolayer transition metal dichalcogenides. Using MoS 2 as a representative material with valley-selective optical transitions, we establish quantitative image analysis for polarimetric maps of extended crystals, and identify valley polarization and valley coherence as sensitive probes of crystalline disorder. Moreover, we findmore » site-dependent thermal and non-thermal regimes of valley-polarized excitons in perpendicular magnetic fields. Finally, we demonstrate the potential of widefield polarimetry for rapid inspection of opto-valleytronic devices based on atomically thin semiconductors and heterostructures.« less

Opto-valleytronic imaging of atomically thin semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neumann, Andre; Lindlau, Jessica; Colombier, Léo

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular motion and associated valley polarization and valley coherence as key elements of opto-valleytronic functionality. Here, we introduce two-dimensional polarimetry as means of direct imaging of the valley pseudospin degree of freedom in monolayer transition metal dichalcogenides. Using MoS 2 as a representative material with valley-selective optical transitions, we establish quantitative image analysis for polarimetric maps of extended crystals, and identify valley polarization and valley coherence as sensitive probes of crystalline disorder. Moreover, we findmore » site-dependent thermal and non-thermal regimes of valley-polarized excitons in perpendicular magnetic fields. Finally, we demonstrate the potential of widefield polarimetry for rapid inspection of opto-valleytronic devices based on atomically thin semiconductors and heterostructures.« less

GHz Yb:KYW oscillators in time-resolved spectroscopy

NASA Astrophysics Data System (ADS)

Li, Changxiu; Krauß, Nico; Schäfer, Gerhard; Ebner, Lukas; Kliebisch, Oliver; Schmidt, Johannes; Winnerl, Stephan; Hettich, Mike; Dekorsy, Thomas

2018-02-01

A high-speed asynchronous optical sampling system (ASOPS) based on Yb:KYW oscillators with 1-GHz repetition rate is reported. Two frequency-offset-stabilized diode-pumped Yb:KYW oscillators are employed as pump and probe source, respectively. The temporal resolution of this system within 1-ns time window is limited to 500 fs and the noise floor around 10-6 (ΔR/R) close to the shot-noise level is obtained within an acquisition time of a few seconds. Coherent acoustic phonons are investigated by measuring multilayer semiconductor structures with multiple quantum wells and aluminum/silicon membranes in this ASOPS system. A wavepacket-like phonon sequence at 360 GHz range is detected in the semiconductor structures and a decaying sequence of acoustic oscillations up to 200 GHz is obtained in the aluminum/silicon membranes. Coherent acoustic phonons generated from semiconductor structures are further manipulated by a double pump scheme through pump time delay control.

High-energy side-peak emission of exciton-polariton condensates in high density regime

PubMed Central

Horikiri, Tomoyuki; Yamaguchi, Makoto; Kamide, Kenji; Matsuo, Yasuhiro; Byrnes, Tim; Ishida, Natsuko; Löffler, Andreas; Höfling, Sven; Shikano, Yutaka; Ogawa, Tetsuo; Forchel, Alfred; Yamamoto, Yoshihisa

2016-01-01

In a standard semiconductor laser, electrons and holes recombine via stimulated emission to emit coherent light, in a process that is far from thermal equilibrium. Exciton-polariton condensates–sharing the same basic device structure as a semiconductor laser, consisting of quantum wells coupled to a microcavity–have been investigated primarily at densities far below the Mott density for signatures of Bose-Einstein condensation. At high densities approaching the Mott density, exciton-polariton condensates are generally thought to revert to a standard semiconductor laser, with the loss of strong coupling. Here, we report the observation of a photoluminescence sideband at high densities that cannot be accounted for by conventional semiconductor lasing. This also differs from an upper-polariton peak by the observation of the excitation power dependence in the peak-energy separation. Our interpretation as a persistent coherent electron-hole-photon coupling captures several features of this sideband, although a complete understanding of the experimental data is lacking. A full understanding of the observations should lead to a development in non-equilibrium many-body physics. PMID:27193700

Polarization-induced transport in organic field-effect transistors: the role of ferroelectric dielectrics

NASA Astrophysics Data System (ADS)

Guha, Suchismita; Laudari, Amrit

2017-08-01

The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) - along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.

A Semiconductor Microlaser for Intracavity Flow Cytometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhil, O.; Copeland, G.C.; Dunne, J.L.

1999-01-20

Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

Coherent Optical Control of Electronic Excitations in Wide-Band-Gap Semiconductor Structures

DTIC Science & Technology

2015-05-01

ABSTRACT The main objective of this research is to study coherent quantum effects, such as Rabi oscillations in optical spectra of wide- band-gap...field corresponds to the rotation of the B vector about the pseudo field vector, Ω, with components determined by the effective Rabi frequency ( )e...to examine coherent quantum effects, such as Rabi oscillations and quantum entanglement in optical spectra of wide-band-gap materials, and to

Coherent vs Incoherent Emission from Semiconductor Structures after Resonant Femtosecond Excitation

NASA Astrophysics Data System (ADS)

Gurioli, Massimo; Bogani, Franco; Ceccherini, Simone; Colocci, Marcello

1997-04-01

We show that an interferometric correlation measurement with fs time resolution provides an unambiguous discrimination between coherent and incoherent emission after resonant femtosecond excitation. The experiment directly probes the most important difference between the two emissions, that is, the phase correlation with the excitation pulse. The comparison with cw frequency resolved measurements demonstrates that the relationship between coherent and incoherent emission is similar under femtosecond and steady-state excitation.

Terahertz-bandwidth coherence measurements of a quantum dash laser in passive and active mode-locking operation.

PubMed

Martin, Eamonn; Watts, Regan; Bramerie, Laurent; Shen, Alexandre; Gariah, Harry; Blache, Fabrice; Lelarge, Francois; Barry, Liam

2012-12-01

This research carries out coherence measurements of a 42.7 GHz quantum dash (QDash) semiconductor laser when passively, electrically, and optically mode-locked. Coherence of the spectral lines from the mode-locked laser is determined by examining the radio frequency beat-tone linewidth as the mode spacing is increased up to 1.1 THz. Electric-field measurements of the QDash laser are also presented, from which a comparison between experimental results and accepted theory for coherence in passively mode-locked lasers has been performed.

Storing quantum information for 30 seconds in a nanoelectronic device.

PubMed

Muhonen, Juha T; Dehollain, Juan P; Laucht, Arne; Hudson, Fay E; Kalra, Rachpon; Sekiguchi, Takeharu; Itoh, Kohei M; Jamieson, David N; McCallum, Jeffrey C; Dzurak, Andrew S; Morello, Andrea

2014-12-01

The spin of an electron or a nucleus in a semiconductor naturally implements the unit of quantum information--the qubit. In addition, because semiconductors are currently used in the electronics industry, developing qubits in semiconductors would be a promising route to realize scalable quantum information devices. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms, or charge and spin fluctuations arising from defects in oxides and interfaces. For materials such as silicon, enrichment of the spin-zero (28)Si isotope drastically reduces spin-bath decoherence. Experiments on bulk spin ensembles in (28)Si crystals have indeed demonstrated extraordinary coherence times. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here, we present the coherent operation of individual (31)P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered (28)Si substrate. The (31)P nuclear spin sets the new benchmark coherence time (>30 s with Carr-Purcell-Meiboom-Gill (CPMG) sequence) of any single qubit in the solid state and reaches >99.99% control fidelity. The electron spin CPMG coherence time exceeds 0.5 s, and detailed noise spectroscopy indicates that--contrary to widespread belief--it is not limited by the proximity to an interface. Instead, decoherence is probably dominated by thermal and magnetic noise external to the device, and is thus amenable to further improvement.

Coherent photoluminescence excitation spectroscopy of semicrystalline polymeric semiconductors

NASA Astrophysics Data System (ADS)

Silva, Carlos; Grégoire, Pascal; Thouin, Félix

In polymeric semiconductors, the competition between through-bond (intrachain) and through-space (interchain) electronic coupling determines two-dimensional spatial coherence of excitons. The balance of intra- and interchain excitonic coupling depends very sensitively on solid-state microstructure of the polymer film (polycrystalline, semicrystalline with amorphous domains, etc.). Regioregular poly(3-hexylthiophene) has emerged as a model material because its photoluminescence (PL) spectral lineshape reveals intricate information on the magnitude of excitonic coupling, the extent of energetic disorder, and on the extent to which the disordered energy landscape is correlated. I discuss implementation of coherent two-dimensional electronic spectroscopy. We identify cross peaks between 0-0 and 0-1 excitation peaks, and we measure their time evolution, which we interpret within the context of a hybrid HJ aggregate model. By measurement of the homogeneous linewidth in diverse polymer microstructures, we address the nature of optical transitions within such hynbrid aggregate model. These depend strongly on sample processing, and I discuss the relationship between microstructure, steady-state absorption and PL spectral lineshape, and 2D coherent PL excitation spectral lineshapes.

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

DOE PAGES

Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; ...

2015-02-09

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr xTi 1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x.more » We present structural and electrical characterization of SrZr xTi 1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

Lasers, their development, and applications at M.I.T. Lincoln Laboratory

NASA Technical Reports Server (NTRS)

Rediker, R. H.; Melngailis, I.; Mooradian, A.

1984-01-01

A historical account of the work on lasers at MIT Lincoln Laboratory is presented. Highlighted are the efforts that led to the coinvention of the semiconductor laser and the Laboratory's later role in establishing the feasibility of GaInAsP/InP semiconductor lasers for use in fiber telecommunications at 1.3-1.5 micron wavelengths. Descriptions of other important developments include tunable lead-salt semiconductor and solid-state lasers for spectroscopy and LIDAR applications, respectively, as well as ultrastable CO2 lasers for coherent infrared radar.

Access to long-term optical memories using photon echoes retrieved from electron spins in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Poltavtsev, S. V.; Langer, L.; Yugova, I. A.; Salewski, M.; Kapitonov, Y. V.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

2016-10-01

We use spontaneous (two-pulse) and stimulated (three-pulse) photon echoes for studying the coherent evolution of optically excited ensemble of trions which are localized in semiconductor CdTe/CdMgTe quantum well. Application of transverse magnetic field leads to the Larmor precession of the resident electron spins, which shuffles optically induced polarization between optically accessible and inaccessible states. This results in several spectacular phenomena. First, magnetic field induces oscillations of spontaneous photon echo amplitude. Second, in three-pulse excitation scheme, the photon echo decay is extended by several orders of magnitude. In this study, short-lived optical excitation which is created by the first pulse is coherently transferred into a long-lived electron spin state using the second optical pulse. This coherent spin state of electron ensemble persists much longer than any optical excitation in the system, preserving information on initial optical field, which can be retrieved as a photon echo by means of third optical pulse.

Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum

PubMed Central

Seghilani, Mohamed S.; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

2016-01-01

The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here “orbital birefringence”, based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create “orbital gain dichroism” allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (<1°) diffraction limited beam, emitting 49 mW output power in the near-IR at λ ≃ 1 μm, a charge l = ±1, … ±4 (>50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications. PMID:27917885

Coherently-enabled environmental control of optics and energy transfer pathways of hybrid quantum dot-metallic nanoparticle systems.

PubMed

Hatef, Ali; Sadeghi, Seyed M; Fortin-Deschênes, Simon; Boulais, Etienne; Meunier, Michel

2013-03-11

It is well-known that optical properties of semiconductor quantum dots can be controlled using optical cavities or near fields of localized surface plasmon resonances (LSPRs) of metallic nanoparticles. In this paper we study the optics, energy transfer pathways, and exciton states of quantum dots when they are influenced by the near fields associated with plasmonic meta-resonances. Such resonances are formed via coherent coupling of excitons and LSPRs when the quantum dots are close to metallic nanorods and driven by a laser beam. Our results suggest an unprecedented sensitivity to the refractive index of the environment, causing significant spectral changes in the Förster resonance energy transfer from the quantum dots to the nanorods and in exciton transition energies. We demonstrate that when a quantum dot-metallic nanorod system is close to its plasmonic meta-resonance, we can adjust the refractive index to: (i) control the frequency range where the energy transfer from the quantum dot to the metallic nanorod is inhibited, (ii) manipulate the exciton transition energy shift of the quantum dot, and (iii) disengage the quantum dot from the metallic nanoparticle and laser field. Our results show that near meta-resonances the spectral forms of energy transfer and exciton energy shifts are strongly correlated to each other.

Image routing via atomic spin coherence

PubMed Central

Wang, Lei; Sun, Jia-Xiang; Luo, Meng-Xi; Sun, Yuan-Hang; Wang, Xiao-Xiao; Chen, Yi; Kang, Zhi-Hui; Wang, Hai-Hua; Wu, Jin-Hui; Gao, Jin-Yue

2015-01-01

Coherent storage of optical image in a coherently-driven medium is a promising method with possible applications in many fields. In this work, we experimentally report a controllable spatial-frequency routing of image via atomic spin coherence in a solid-state medium driven by electromagnetically induced transparency (EIT). Under the EIT-based light-storage regime, a transverse spatial image carried by the probe field is stored into atomic spin coherence. By manipulating the frequency and spatial propagation direction of the read control field, the stored image is transferred into a new spatial-frequency channel. When two read control fields are used to retrieve the stored information, the image information is converted into a superposition of two spatial-frequency modes. Through this technique, the image is manipulated coherently and all-optically in a controlled fashion. PMID:26658846

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors.

PubMed

Fluegel, Brian; Mialitsin, Aleksej V; Beaton, Daniel A; Reno, John L; Mascarenhas, Angelo

2015-05-28

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10(-4). Comparing our strain sensitivity and signal strength in Al(x)Ga(1-x)As with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10(3), thus obviating key constraints in semiconductor strain metrology.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

PubMed Central

Fluegel, Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; Reno, John L.; Mascarenhas, Angelo

2015-01-01

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10−4. Comparing our strain sensitivity and signal strength in AlxGa1−xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 103, thus obviating key constraints in semiconductor strain metrology. PMID:26017853

Cross-plane thermal conductivity of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices

NASA Astrophysics Data System (ADS)

Saha, Bivas; Koh, Yee Rui; Comparan, Jonathan; Sadasivam, Sridhar; Schroeder, Jeremy L.; Garbrecht, Magnus; Mohammed, Amr; Birch, Jens; Fisher, Timothy; Shakouri, Ali; Sands, Timothy D.

2016-01-01

Reduction of cross-plane thermal conductivity and understanding of the mechanisms of heat transport in nanostructured metal/semiconductor superlattices are crucial for their potential applications in thermoelectric and thermionic energy conversion devices, thermal management systems, and thermal barrier coatings. We have developed epitaxial (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices with periodicity ranging from 1 nm to 240 nm that show significantly lower thermal conductivity compared to the parent TiN/(Al,Sc)N superlattice system. The (Ti,W)N/(Al,Sc)N superlattices grow with [001] orientation on the MgO(001) substrates with well-defined coherent layers and are nominally single crystalline with low densities of extended defects. Cross-plane thermal conductivity (measured by time-domain thermoreflectance) decreases with an increase in the superlattice interface density in a manner that is consistent with incoherent phonon boundary scattering. Thermal conductivity values saturate at 1.7 W m-1K-1 for short superlattice periods possibly due to a delicate balance between long-wavelength coherent phonon modes and incoherent phonon scattering from heavy tungsten atomic sites and superlattice interfaces. First-principles density functional perturbation theory based calculations are performed to model the vibrational spectrum of the individual component materials, and transport models are used to explain the interface thermal conductance across the (Ti,W)N/(Al,Sc)N interfaces as a function of periodicity. The long-wavelength coherent phonon modes are expected to play a dominant role in the thermal transport properties of the short-period superlattices. Our analysis of the thermal transport properties of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices addresses fundamental questions about heat transport in multilayer materials.

The partial coherence modulation transfer function in testing lithography lens

NASA Astrophysics Data System (ADS)

Huang, Jiun-Woei

2018-03-01

Due to the lithography demanding high performance in projection of semiconductor mask to wafer, the lens has to be almost free in spherical and coma aberration, thus, in situ optical testing for diagnosis of lens performance has to be established to verify the performance and to provide the suggesting for further improvement of the lens, before the lens has been build and integrated with light source. The measurement of modulation transfer function of critical dimension (CD) is main performance parameter to evaluate the line width of semiconductor platform fabricating ability for the smallest line width of producing tiny integrated circuits. Although the modulation transfer function (MTF) has been popularly used to evaluation the optical system, but in lithography, the contrast of each line-pair is in one dimension or two dimensions, analytically, while the lens stand along in the test bench integrated with the light source coherent or near coherent for the small dimension near the optical diffraction limit, the MTF is not only contributed by the lens, also by illumination of platform. In the study, the partial coherence modulation transfer function (PCMTF) for testing a lithography lens is suggested by measuring MTF in the high spatial frequency of in situ lithography lens, blended with the illumination of partial and in coherent light source. PCMTF can be one of measurement to evaluate the imperfect lens of lithography lens for further improvement in lens performance.

Methods, systems, and apparatus for storage, transfer and/or control of information via matter wave dynamics

NASA Technical Reports Server (NTRS)

Vestergaard Hau, Lene (Inventor)

2012-01-01

Methods, systems and apparatus for generating atomic traps, and for storing, controlling and transferring information between first and second spatially separated phase-coherent objects, or using a single phase-coherent object. For plural objects, both phase-coherent objects have a macroscopic occupation of a particular quantum state by identical bosons or identical BCS-paired fermions. The information may be optical information, and the phase-coherent object(s) may be Bose-Einstein condensates, superfluids, or superconductors. The information is stored in the first phase-coherent object at a first storage time and recovered from the second phase-coherent object, or the same first phase-coherent object, at a second revival time. In one example, an integrated silicon wafer-based optical buffer includes an electrolytic atom source to provide the phase-coherent object(s), a nanoscale atomic trap for the phase-coherent object(s), and semiconductor-based optical sources to cool the phase-coherent object(s) and provide coupling fields for storage and transfer of optical information.

Review on the dynamics of semiconductor nanowire lasers

NASA Astrophysics Data System (ADS)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Nonequilibrium Langevin approach to quantum optics in semiconductor microcavities

NASA Astrophysics Data System (ADS)

Portolan, S.; di Stefano, O.; Savasta, S.; Rossi, F.; Girlanda, R.

2008-01-01

Recently, the possibility of generating nonclassical polariton states by means of parametric scattering has been demonstrated. Excitonic polaritons propagate in a complex interacting environment and contain real electronic excitations subject to scattering events and noise affecting quantum coherence and entanglement. Here, we present a general theoretical framework for the realistic investigation of polariton quantum correlations in the presence of coherent and incoherent interaction processes. The proposed theoretical approach is based on the nonequilibrium quantum Langevin approach for open systems applied to interacting-electron complexes described within the dynamics controlled truncation scheme. It provides an easy recipe to calculate multitime correlation functions which are key quantities in quantum optics. As a first application, we analyze the buildup of polariton parametric emission in semiconductor microcavities including the influence of noise originating from phonon-induced scattering.

Nuclear spin cooling by electric dipole spin resonance and coherent population trapping

NASA Astrophysics Data System (ADS)

Li, Ai-Xian; Duan, Su-Qing; Zhang, Wei

2017-09-01

Nuclear spin fluctuation suppression is a key issue in preserving electron coherence for quantum information/computation. We propose an efficient way of nuclear spin cooling in semiconductor quantum dots (QDs) by the coherent population trapping (CPT) and the electric dipole spin resonance (EDSR) induced by optical fields and ac electric fields. The EDSR can enhance the spin flip-flop rate and may bring out bistability under certain conditions. By tuning the optical fields, we can avoid the EDSR induced bistability and obtain highly polarized nuclear spin state, which results in long electron coherence time. With the help of CPT and EDSR, an enhancement of 1500 times of the electron coherence time can been obtained after a 500 ns preparation time.

The gatemon: a transmon with a voltage-variable superconductor-semiconductor junction

NASA Astrophysics Data System (ADS)

Petersson, Karl

We have developed a superconducting transmon qubit with a semiconductor-based Josephson junction element. The junction is made from an InAs nanowire with in situ molecular beam epitaxy-grown superconducting Al contacts. This gate-controlled transmon, or gatemon, allows simple tuning of the qubit transition frequency using a gate voltage to vary the density of carriers in the semiconductor region. In the first generations of devices we have measured coherence times up to ~10 μs. These coherence times, combined with stable qubit operation, permit single qubit rotations with fidelities of ~99.5 % for all gates including voltage-controlled Z rotations. Towards multi-qubit operation we have also implemented a two qubit voltage-controlled cPhase gate. In contrast to flux-tuned transmons, voltage-tunable gatemons may simplify the task of scaling to multi-qubit circuits and enable new means of control for many qubit architectures. In collaboration with T.W. Larsen, L. Casparis, M.S. Olsen, F. Kuemmeth, T.S. Jespersen, P. Krogstrup, J. Nygard and C.M. Marcus. Research was supported by Microsoft Project Q, Danish National Research Foundation and a Marie Curie Fellowship.

Measuring finite-range phase coherence in an optical lattice using Talbot interferometry

PubMed Central

Santra, Bodhaditya; Baals, Christian; Labouvie, Ralf; Bhattacherjee, Aranya B.; Pelster, Axel; Ott, Herwig

2017-01-01

One of the important goals of present research is to control and manipulate coherence in a broad variety of systems, such as semiconductor spintronics, biological photosynthetic systems, superconducting qubits and complex atomic networks. Over the past decades, interferometry of atoms and molecules has proven to be a powerful tool to explore coherence. Here we demonstrate a near-field interferometer based on the Talbot effect, which allows us to measure finite-range phase coherence of ultracold atoms in an optical lattice. We apply this interferometer to study the build-up of phase coherence after a quantum quench of a Bose–Einstein condensate residing in a one-dimensional optical lattice. Our technique of measuring finite-range phase coherence is generic, easy to adopt and can be applied in practically all lattice experiments without further modifications. PMID:28580941

22 W coherent GaAlAs amplifier array with 400 emitters

NASA Technical Reports Server (NTRS)

Krebs, D.; Herrick, R.; No, K.; Harting, W.; Struemph, F.

1991-01-01

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

Coherent Electron Transfer at the Ag / Graphite Heterojunction Interface

NASA Astrophysics Data System (ADS)

Tan, Shijing; Dai, Yanan; Zhang, Shengmin; Liu, Liming; Zhao, Jin; Petek, Hrvoje

2018-03-01

Charge transfer in transduction of light to electrical or chemical energy at heterojunctions of metals with semiconductors or semimetals is believed to occur by photogenerated hot electrons in metal undergoing incoherent internal photoemission through the heterojunction interface. Charge transfer, however, can also occur coherently by dipole coupling of electronic bands at the heterojunction interface. Microscopic physical insights into how transfer occurs can be elucidated by following the coherent polarization of the donor and acceptor states on the time scale of electronic dephasing. By time-resolved multiphoton photoemission spectroscopy (MPP), we investigate the coherent electron transfer from an interface state that forms upon chemisorption of Ag nanoclusters onto graphite to a σ symmetry interlayer band of graphite. Multidimensional MPP spectroscopy reveals a resonant two-photon transition, which dephases within 10 fs completing the coherent transfer.

Simulations of defect spin qubits in piezoelectric semiconductors

NASA Astrophysics Data System (ADS)

Seo, Hosung

In recent years, remarkable advances have been reported in the development of defect spin qubits in semiconductors for solid-state quantum information science and quantum metrology. Promising spin qubits include the nitrogen-vacancy center in diamond, dopants in silicon, and the silicon vacancy and divacancy spins in silicon carbide. In this talk, I will highlight some of our recent efforts devoted to defect spin qubits in piezoelectric wide-gap semiconductors for potential applications in mechanical hybrid quantum systems. In particular, I will describe our recent combined theoretical and experimental study on remarkably robust quantum coherence found in the divancancy qubits in silicon carbide. We used a quantum bath model combined with a cluster expansion method to identify the microscopic mechanisms behind the unusually long coherence times of the divacancy spins in SiC. Our study indicates that developing spin qubits in complex crystals with multiple types of atom is a promising route to realize strongly coherent hybrid quantum systems. I will also discuss progress and challenges in computational design of new spin defects for use as qubits in piezoelectric crystals such as AlN and SiC, including a new defect design concept using large metal ion - vacancy complexes. Our first principles calculations include DFT computations using recently developed self-consistent hybrid density functional theory and large-scale many-body GW theory. This work was supported by the National Science Foundation (NSF) through the University of Chicago MRSEC under Award Number DMR-1420709.

High-mobility strained organic semiconductors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Takeya, Jun; Matsui, H.; Kubo, T.; Hausermann, Roger

2016-11-01

Small molecular organic semiconductor crystals form interesting electronic systems of periodically arranged "charge clouds" whose mutual electronic coupling determines whether or not electronic states can be coherent over fluctuating molecules. This presentation focuses on two methods to reduce molecular fluctuation, which strongly restricts mobility of highly mobile charge in single-crystal organic transistors. The first example is to apply external hydrostatic pressure. Using Hall-effect measurement for pentacene FETs, which tells us the extent of the electronic coherence, we found a crossover from hopping-like transport of nearly localized charge to band transport of delocalized charge with full coherence. As the result of temperature dependence measurement, it turned out that reduced molecular fluctuation is mainly responsible for the crossover. The second is to apply uniaxial strain to single-crystal organic FETs. We applied stain by bending thin films of newly synthesized decyldinaphthobenzodithiophene (C10-DNBDT) on plastic substrate so that 3% strain is uniaxially applied. As the result, the room-temperature mobility increased by the factor of 1.7. In-depth analysis using X-ray diffraction (XRD) measurements and density functional theory (DFT) calculations reveal the origin to be the suppression of the thermal fluctuation of the individual molecules, which is confirmed by temperature dependent measurements. Our findings show that compressing the crystal structure directly restricts the vibration of the molecules, thus suppressing dynamic disorder, a unique mechanism in organic semiconductors. Since strain can easily be induced during the fabrication process, these findings can directly be exploited to build high performance organic devices.

Holographic optical coherence imaging of tumor spheroids

NASA Astrophysics Data System (ADS)

Yu, P.; Mustata, M.; Turek, J. J.; French, P. M. W.; Melloch, M. R.; Nolte, D. D.

2003-07-01

We present depth-resolved coherence-domain images of living tissue using a dynamic holographic semiconductor film. An AlGaAs photorefractive quantum-well device is used in an adaptive interferometer that records coherent backscattered (image-bearing) light from inside rat osteogenic sarcoma tumor spheroids up to 1 mm in diameter in vitro. The data consist of sequential holographic image frames at successive depths through the tumor represented as a visual video "fly-through." The images from the tumor spheroids reveal heterogeneous structures presumably caused by necrosis and microcalcifications characteristic of human tumors in their early avascular growth.

Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, K.; Camp, J.

2011-01-01

So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

NASA Astrophysics Data System (ADS)

Khadzhi, P. I.; Lyakhomskaya, K. D.

1999-10-01

The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

Antenna Development for Multifunctional Armor Applications Using Embedded Spin-Torque Nano-Oscillator (STNO) as a Microwave Detector

DTIC Science & Technology

2011-08-09

Tsoi, A. G. M. Jansen, J. Bass, W. C. Chiang, V. Tsoi, and P. Wyder, “Generation and detection of phase-coherent current-driven magnons in magnetic...multilayers”, Nature, vol. 406, pp. 46–48 (2000). [5] M. Tsoi, “Phase-coherent current-driven magnons in magnetic multilayers”, J. Magn. Magn. Mater

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

DOE PAGES

Fluegel., Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; ...

2015-05-28

In this study, the semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10 –4. Comparing our strain sensitivity andmore » signal strength in Al xGa 1–xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10 3, thus obviating key constraints in semiconductor strain metrology.« less

Dynamics of a vertical cavity quantum cascade phonon laser structure

PubMed Central

Maryam, W.; Akimov, A. V.; Campion, R. P.; Kent, A. J.

2013-01-01

Driven primarily by scientific curiosity, but also by the potential applications of intense sources of coherent sound, researchers have targeted the phonon laser (saser) since the invention of the optical laser over 50 years ago. Here we fabricate a vertical cavity structure designed to operate as a saser oscillator device at a frequency of 325 GHz. It is based on a semiconductor superlattice gain medium, inside a multimode cavity between two acoustic Bragg reflectors. We measure the acoustic output of the device as a function of time after applying electrical pumping. The emission builds in intensity reaching a steady state on a timescale of order 0.1 μs. We show that the results are consistent with a model of the dynamics of a saser cavity exactly analogous to the models used for describing laser dynamics. We also obtain estimates for the gain coefficient, steady-state acoustic power output and efficiency of the device. PMID:23884078

Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator

DTIC Science & Technology

2008-03-01

then used to fit theoretical models describing radiative and non-radiative relaxation processes. 3.2 Experimental Setup This thesis uses a mode...Russian Efforts. Master’s thesis, Naval Postgraduate School, 2005. 5. Chirsto, Farid C. “Thermochemistry and Kinetics Models for MagnesiumTe- flon/Viton...Coherent Mira Model 900-F Laser. 7. Cooley, William T. Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material

An Optical Fiber Communication System Based on Coherent Modulation. Part 1.

DTIC Science & Technology

1985-06-01

the’ local oscillator signal. In the receiver the two signals are recombined optically using a single mode fiber coupler or a beam splitter , and the...Fig. 2. Design of practical systems may imply the use of non - ideal laser diodes. In a cooperation with British Telecom Research Labora- tories we...frequency stabilisation *the transmission fiber - *injection locking of semiconductor lasers *the coherent receiver Our next target is complete design

Protection of inorganic semiconductors for sustained, efficient photoelectrochemical water oxidation

DOE PAGES

Lichterman, Michael F.; Sun, Ke; Hu, Shu; ...

2015-10-25

Small-band-gap (E g < 2 eV) semiconductors must be stabilized for use in integrated devices that convert solar energy into the bonding energy of a reduced fuel, specifically H 2 (g) or a reduced-carbon species such as CH 3 OH or CH 4 . To sustainably and scalably complete the fuel cycle, electrons must be liberated through the oxidation of water to O 2 (g). Strongly acidic or strongly alkaline electrolytes are needed to enable efficient and intrinsically safe operation of a full solar-driven water-splitting system. But, under water-oxidation conditions, the small-band-gap semiconductors required for efficient cell operation aremore » unstable, either dissolving or forming insulating surface oxides. Here, we describe herein recent progress in the protection of semiconductor photoanodes under such operational conditions. We specifically describe the properties of two protective overlayers, TiO 2 /Ni and NiO x , both of which have demonstrated the ability to protect otherwise unstable semiconductors for > 100 h of continuous solar-driven water oxidation when in contact with a highly alkaline aqueous electrolyte (1.0 M KOH(aq)). Furthermore, the stabilization of various semiconductor photoanodes is reviewed in the context of the electronic characteristics and a mechanistic analysis of the TiO 2 films, along with a discussion of the optical, catalytic, and electronic nature of NiO x films for stabilization of semiconductor photoanodes for water oxidation.« less

Electron transport in ferromagnetic nanostructures

NASA Astrophysics Data System (ADS)

Lee, Sungbae

As the size of a physical system decreases toward the nanoscale, quantum mechanical effects such as the discretization of energy levels and the interactions of the electronic spins become readily observable. To understand what happens within submicrometer scale samples is one of the goals of modern condensed matter physics. Electron transport phenomena drew a lot of attention over the past two decades or so, not only because quantum corrections to the classical transport theory, but also they allow us to probe deeply into the microscopic nature of the system put to test. Although a significant amount of research was done in the past and thus extended our understanding in this field, most of these works were concentrated on simpler examples. Electron transport in strongly correlated systems is still a field that needs to be explored more thoroughly. In fact, experimental works that have been done so far to characterize coherence physics in correlated systems such as ferromagnetic metals are far from conclusive. One reason ferromagnetic samples draw such attention is that there exist correlations that lead to excitations (e.g. spin waves, domain wall motions) not present in normal metals, and these new environmental degrees of freedom can have profound effects on decoherence processes. In this thesis, three different types of magnetic samples were examined: a band ferromagnetism based metallic ferromagnet, permalloy, a III-V diluted ferromagnetic semiconductor with ferromagnetism from a hole-mediated exchange interaction, and magnetite nanocrystals and films. The first observation of time-dependent universal conductance fluctuations (TD-UCF) in permalloy is presented and our observations lead to three major conclusions. First, the cooperon contribution to the conductance is suppressed in this material. This is consistent with some theoretical expectations, and implies that weak localization will be suppressed as well. Second, we see evidence that domain wall motion leads to enhanced conductance fluctuations, demonstrating experimentally that domain walls can act as coherent scatterers of electrons. Third, the temperature dependence of the fluctuations is surprisingly strong, suggesting that the dominant decoherence mechanism in these wires is different than that in similar normal metal nanostructures. The first observation of TD-UCF in diluted magnetic semiconductors (DMS) is also presented. In contrast to analogous measurements on permalloy samples, we find a surprising suppression of TD-UCF noise in this material at low temperatures, independent of field orientation. We believe this implies that the suppression is not due to an orbital effect, and therefore some of the fluctuations originate with time-varying magnetic disorder. The temperature dependence of the TD-UCF implies either an unusual fluctuator spectrum or a nonstandard dephasing mechanism. Measurements of UCF as a function of magnetic field allow an order of magnitude estimate of the coherence length at 2 K of approximately 50 nm in this material. The last samples examined were magnetite nanocrystals and films. Magnetite has been used in technologies for millennia, from compasses to magnetoelectronic devices, although its electronic structure has remained controversial for seven decades, with a low temperature insulator and a high temperature "bad metal" separated by the Verwey transition at 120 K. A new electrically driven insulator-metal transition below the Verwey temperature in both magnetite films and nanocrystals was observed. The possibility that this was a thermal effect was tested through various methods, and we have shown that the transition is in fact truly electrically driven. This electrically driven transition also showed a great deal of rigidity against external magnetic field and high gate voltages.

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS 2 and WS 2

DOE PAGES

Yang, Luyi; Sinitsyn, Nikolai A.; Chen, Weibing; ...

2015-08-03

The recently discovered monolayer transition metal dichalcogenides (TMDCs) provide a fertile playground to explore new coupled spin–valley physics. Although robust spin and valley degrees of freedom are inferred from polarized photoluminescence (PL) experiments PL timescales are necessarily constrained by short-lived (3–100 ps) electron–hole recombination9, 10. Direct probes of spin/valley polarization dynamics of resident carriers in electron (or hole)-doped TMDCs, which may persist long after recombination ceases, are at an early stage. Here we directly measure the coupled spin–valley dynamics in electron-doped MoS 2 and WS 2 monolayers using optical Kerr spectroscopy, and reveal very long electron spin lifetimes, exceeding 3more » ns at 5 K (2-3 orders of magnitude longer than typical exciton recombination times). In contrast with conventional III–V or II–VI semiconductors, spin relaxation accelerates rapidly in small transverse magnetic fields. Supported by a model of coupled spin–valley dynamics, these results indicate a novel mechanism of itinerant electron spin dephasing in the rapidly fluctuating internal spin–orbit field in TMDCs, driven by fast inter-valley scattering. Additionally, a long-lived spin coherence is observed at lower energies, commensurate with localized states. These studies provide insight into the physics underpinning spin and valley dynamics of resident electrons in atomically thin TMDCs.« less

Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

NASA Astrophysics Data System (ADS)

Craco, L.; Laad, M. S.; Müller-Hartmann, E.

2003-12-01

Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

Role of initial coherence in the generation of harmonics and sidebands from a strongly driven two-level atom

NASA Astrophysics Data System (ADS)

Gauthey, F. I.; Keitel, C. H.; Knight, P. L.; Maquet, A.

1995-07-01

We investigate the coherent and incoherent contributions of the scattering spectrum of strongly driven two-level atoms as a function of the initial preparation of the atomic system. The initial ``phasing'' of the coherent superposition of the excited and ground states is shown to influence strongly the generation of both harmonics and hyper-Raman lines. In particular, we point out conditions under which harmonic generation can be inhibited at the expense of the hyper-Raman lines. Our numerical findings are supported by approximate analytical evaluation in the dressed state picture.

Dynamics of plasmonic field polarization induced by quantum coherence in quantum dot-metallic nanoshell structures.

PubMed

Sadeghi, S M

2014-09-01

When a hybrid system consisting of a semiconductor quantum dot and a metallic nanoparticle interacts with a laser field, the plasmonic field of the metallic nanoparticle can be normalized by the quantum coherence generated in the quantum dot. In this Letter, we study the states of polarization of such a coherent-plasmonic field and demonstrate how these states can reveal unique aspects of the collective molecular properties of the hybrid system formed via coherent exciton-plasmon coupling. We show that transition between the molecular states of this system can lead to ultrafast polarization dynamics, including sudden reversal of the sense of variations of the plasmonic field and formation of circular and elliptical polarization.

Time-resolved lateral spin-caloric transport of optically generated spin packets in n-GaAs

NASA Astrophysics Data System (ADS)

Göbbels, Stefan; Güntherodt, Gernot; Beschoten, Bernd

2018-05-01

We report on lateral spin-caloric transport (LSCT) of electron spin packets which are optically generated by ps laser pulses in the non-magnetic semiconductor n-GaAs at K. LSCT is driven by a local temperature gradient induced by an additional cw heating laser. The spatio-temporal evolution of the spin packets is probed using time-resolved Faraday rotation. We demonstrate that the local temperature-gradient induced spin diffusion is solely driven by a non-equilibrium hot spin distribution, i.e. without involvement of phonon drag effects. Additional electric field-driven spin drift experiments are used to verify directly the validity of the non-classical Einstein relation for moderately doped semiconductors at low temperatures for near band-gap excitation.

All-semiconductor high-speed akinetic swept-source for OCT

NASA Astrophysics Data System (ADS)

Minneman, Michael P.; Ensher, Jason; Crawford, Michael; Derickson, Dennis

2011-12-01

A novel swept-wavelength laser for optical coherence tomography (OCT) using a monolithic semiconductor device with no moving parts is presented. The laser is a Vernier-Tuned Distributed Bragg Reflector (VT-DBR) structure exhibiting a single longitudinal mode. All-electronic wavelength tuning is achieved at a 200 kHz sweep repetition rate, 20 mW output power, over 100 nm sweep width and coherence length longer than 40 mm. OCT point-spread functions with 45- 55 dB dynamic range are demonstrated; lasers at 1550 nm, and now 1310 nm, have been developed. Because the laser's long-term tuning stability allows for electronic sample trigger generation at equal k-space intervals (electronic k-clock), the laser does not need an external optical k-clock for measurement interferometer sampling. The non-resonant, allelectronic tuning allows for continuously adjustable sweep repetition rates from mHz to 100s of kHz. Repetition rate duty cycles are continuously adjustable from single-trigger sweeps to over 99% duty cycle. The source includes a monolithically integrated power leveling feature allowing flat or Gaussian power vs. wavelength profiles. Laser fabrication is based on reliable semiconductor wafer-scale processes, leading to low and rapidly decreasing cost of manufacture.

Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

NASA Astrophysics Data System (ADS)

Mkhitaryan, V. V.; Dobrovitski, V. V.

2017-06-01

We investigate the role of the nuclear-spin quantum dynamics in hyperfine-induced spin relaxation of hopping carriers in organic semiconductors. The fast-hopping regime, when the carrier spin does not rotate much between subsequent hops, is typical for organic semiconductors possessing long spin coherence times. We consider this regime and focus on a carrier random-walk diffusion in one dimension, where the effect of the nuclear-spin dynamics is expected to be the strongest. Exact numerical simulations of spin systems with up to 25 nuclear spins are performed using the Suzuki-Trotter decomposition of the evolution operator. Larger nuclear-spin systems are modeled utilizing the spin-coherent state P -representation approach developed earlier. We find that the nuclear-spin dynamics strongly influences the carrier spin relaxation at long times. If the random walk is restricted to a small area, it leads to the quenching of carrier spin polarization at a nonzero value at long times. If the random walk is unrestricted, the carrier spin polarization acquires a long-time tail, decaying as 1 /√{t } . Based on the numerical results, we devise a simple formula describing the effect quantitatively.

Monte Carlo simulation based on dynamic disorder model in organic semiconductors: From coherent to incoherent transport

NASA Astrophysics Data System (ADS)

Yao, Yao; Si, Wei; Hou, Xiaoyuan; Wu, Chang-Qin

2012-06-01

The dynamic disorder model for charge carrier transport in organic semiconductors has been extensively studied in recent years. Although it is successful on determining the value of bandlike mobility in the organic crystalline materials, the incoherent hopping, the typical transport characteristic in amorphous molecular semiconductors, cannot be described. In this work, the decoherence process is taken into account via a phenomenological parameter, say, decoherence time, and the projective and Monte Carlo method are applied for this model to determine the waiting time and thus the diffusion coefficient. It is obtained that the type of transport is changed from coherent to incoherent with a sufficiently short decoherence time, which indicates the essential role of decoherence time in determining the type of transport in organics. We have also discussed the spatial extent of carriers for different decoherence time, and the transition from delocalization (carrier resides in about 10 molecules) to localization is observed. Based on the experimental results of spatial extent, we estimate that the decoherence time in pentacene has the order of 1 ps. Furthermore, the dependence of diffusion coefficient on decoherence time is also investigated, and corresponding experiments are discussed.

Monte Carlo simulation based on dynamic disorder model in organic semiconductors: from coherent to incoherent transport.

PubMed

Yao, Yao; Si, Wei; Hou, Xiaoyuan; Wu, Chang-Qin

2012-06-21

The dynamic disorder model for charge carrier transport in organic semiconductors has been extensively studied in recent years. Although it is successful on determining the value of bandlike mobility in the organic crystalline materials, the incoherent hopping, the typical transport characteristic in amorphous molecular semiconductors, cannot be described. In this work, the decoherence process is taken into account via a phenomenological parameter, say, decoherence time, and the projective and Monte Carlo method are applied for this model to determine the waiting time and thus the diffusion coefficient. It is obtained that the type of transport is changed from coherent to incoherent with a sufficiently short decoherence time, which indicates the essential role of decoherence time in determining the type of transport in organics. We have also discussed the spatial extent of carriers for different decoherence time, and the transition from delocalization (carrier resides in about 10 molecules) to localization is observed. Based on the experimental results of spatial extent, we estimate that the decoherence time in pentacene has the order of 1 ps. Furthermore, the dependence of diffusion coefficient on decoherence time is also investigated, and corresponding experiments are discussed.

Lasing from lead halide perovskite semiconductor microcavity system.

PubMed

Wang, Jun; Da, Peimei; Zhang, Zhe; Luo, Song; Liao, Liming; Sun, Zeyuan; Shen, Xuechu; Wu, Shiwei; Zheng, Gengfeng; Chen, Zhanghai

2018-06-07

Organic-inorganic halide perovskite semiconductors are ideal gain media for fabricating laser and photonic devices due to high absorption, photoluminescence (PL) efficiency and low nonradiative recombination losses. Herein, organic-inorganic halide perovskite CH3NH3PbI3 is embedded in the Fabry-Perot (FP) microcavity, and a wavelength-tunable excitonic lasing with a threshold of 12.9 μJ cm-2 and the spectral coherence of 0.76 nm are realized. The lasing threshold decreases and the spectral coherence enhances as the temperature decreases; these results are ascribed to the suppression of exciton irradiative recombination caused by thermal fluctuation. Moreover, both lasing and light emission below threshold from the perovskite microcavity (PM) system demonstrate a redshift with the decreasing temperature. These results provide a feasible platform based on the PM system for the study of light-matter interaction for quantum optics and the development of optoelectronic devices such as polariton lasers.

Spatial Distortion of Vibration Modes via Magnetic Correlation of Impurities

NASA Astrophysics Data System (ADS)

Krasniqi, F. S.; Zhong, Y.; Epp, S. W.; Foucar, L.; Trigo, M.; Chen, J.; Reis, D. A.; Wang, H. L.; Zhao, J. H.; Lemke, H. T.; Zhu, D.; Chollet, M.; Fritz, D. M.; Hartmann, R.; Englert, L.; Strüder, L.; Schlichting, I.; Ullrich, J.

2018-03-01

Long wavelength vibrational modes in the ferromagnetic semiconductor Ga0.91 Mn0.09 As are investigated using time resolved x-ray diffraction. At room temperature, we measure oscillations in the x-ray diffraction intensity corresponding to coherent vibrational modes with well-defined wavelengths. When the correlation of magnetic impurities sets in, we observe the transition of the lattice into a disordered state that does not support coherent modes at large wavelengths. Our measurements point toward a magnetically induced broadening of long wavelength vibrational modes in momentum space and their quasilocalization in the real space. More specifically, long wavelength vibrational modes cannot be assigned to a single wavelength but rather should be represented as a superposition of plane waves with different wavelengths. Our findings have strong implications for the phonon-related processes, especially carrier-phonon and phonon-phonon scattering, which govern the electrical conductivity and thermal management of semiconductor-based devices.

Ultracoherent operation of spin qubits with superexchange coupling

NASA Astrophysics Data System (ADS)

Rančić, Marko J.; Burkard, Guido

2017-11-01

With the use of nuclear-spin-free materials such as silicon and germanium, spin-based quantum bits (qubits) have evolved to become among the most coherent systems for quantum information processing. The new frontier for spin qubits has therefore shifted to the ubiquitous charge noise and spin-orbit interaction, which are limiting the coherence times and gate fidelities of solid-state qubits. In this paper we investigate superexchange, as a means of indirect exchange interaction between two single electron spin qubits, each embedded in a single semiconductor quantum dot (QD), mediated by an intermediate, empty QD. Our results suggest the existence of "supersweet spots", in which the qubit operations implemented by superexchange interaction are simultaneously first-order-insensitive to charge noise and to errors due to spin-orbit interaction. The proposed spin-qubit architecture is scalable and within the manufacturing capabilities of semiconductor industry.

Controlling ferromagnetism of (In,Fe)As semiconductors by electron doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dang Vu, Nguyen; Fukushima, Tetsuya; Katayama-Yoshida, Hiroshi

2014-02-21

Based on experimental results, using the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) method and Monte Carlo simulation, we study the mechanism of ferromagnetic behavior of (In,Fe)As. We show that with doped Be atoms occupying in interstitial sites, chemical pair interactions between atoms and magnetic exchange interactions between Fe atoms change due to electron concentration. Therefore, by controlling the doping process, magnetic behavior of (In,Fe)As is controlled and ferromagnetism is observed in this semiconductor.

Entanglement between collective fields via atomic coherence effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Xiu; Department of Physics, Xiaogan University, Xiaogan 432000; Hu Xiangming

2010-01-15

We explore the quantum entanglement between two collective fields via atomic coherence effects. For three-level atoms in V configuration driven by two applied fields on two-photon resonance, one coherent superposition of the excited states is not excited, which is the counterpart of coherent population trapping. The coherence-induced depopulation makes two cavity fields in each collection combine into a quantum-beat, i.e., equivalently, the difference mode of the two components decouples from the driven atoms. The two sum modes, when they are arranged in the four-wave mixinglike interactions, can be prepared in Einstein-Podolsky-Rosen entangled state. Correspondingly, any two individual fields from differentmore » collective modes are entangled with each other. Furthermore, the effects of thermal reservoir and laser linewidths are discussed, and a generalization is given to the case in which each quantum beat involves more than two modes.« less

Probing the strongly driven spin-boson model in a superconducting quantum circuit.

PubMed

Magazzù, L; Forn-Díaz, P; Belyansky, R; Orgiazzi, J-L; Yurtalan, M A; Otto, M R; Lupascu, A; Wilson, C M; Grifoni, M

2018-04-11

Quantum two-level systems interacting with the surroundings are ubiquitous in nature. The interaction suppresses quantum coherence and forces the system towards a steady state. Such dissipative processes are captured by the paradigmatic spin-boson model, describing a two-state particle, the "spin", interacting with an environment formed by harmonic oscillators. A fundamental question to date is to what extent intense coherent driving impacts a strongly dissipative system. Here we investigate experimentally and theoretically a superconducting qubit strongly coupled to an electromagnetic environment and subjected to a coherent drive. This setup realizes the driven Ohmic spin-boson model. We show that the drive reinforces environmental suppression of quantum coherence, and that a coherent-to-incoherent transition can be achieved by tuning the drive amplitude. An out-of-equilibrium detailed balance relation is demonstrated. These results advance fundamental understanding of open quantum systems and bear potential for the design of entangled light-matter states.

Ultra-broad band, low power, highly efficient coherent wavelength conversion in quantum dot SOA.

PubMed

Contestabile, G; Yoshida, Y; Maruta, A; Kitayama, K

2012-12-03

We report broadband, all-optical wavelength conversion over 100 nm span, in full S- and C-band, with positive conversion efficiency with low optical input power exploiting dual pump Four-Wave-Mixing in a Quantum Dot Semiconductor Optical Amplifier (QD-SOA). We also demonstrate by Error Vector Magnitude analysis the full transparency of the conversion scheme for coherent modulation formats (QPSK, 8-PSK, 16-QAM, OFDM-16QAM) in the whole C-band.

Coherent versus incoherent resonant emission: an experimental method for easy discrimination and measurement

NASA Astrophysics Data System (ADS)

Ceccherini, S.; Colocci, M.; Gurioli, M.; Bogani, F.

1998-11-01

The distinction between the coherent and the incoherent component of the radiation emitted from resonantly excited material systems is difficult experimentally, particularly when ultra-short optical pulses are used for excitation. We propose an experimental procedure allowing an easy measurement of the two components. The method is completely general and applicable to any kind of physical system; its feasibility is demonstrated on the resonant emission from excitons in a semiconductor quantum well.

New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

NASA Astrophysics Data System (ADS)

Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

2002-05-01

The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

Passively Driven Probe Based on Miniaturized Propeller for Intravascular Optical Coherence Tomography.

PubMed

Lu, Yu; Li, Zhongliang; Nan, Nan; Bu, Yang; Liu, Xuebo; Xu, Xiangdong; Wang, Xuan; Sasaki, Osami; Wang, Xiangzhao

2018-03-26

Optical coherent tomography (OCT) has enabled clinical applications ranging from ophthalmology to cardiology that revolutionized in vivo medical diagnostics in the last few decades, and a variety of endoscopic probes have been developed in order to meet the needs of various endoscopic OCT imaging. We propose a passive driven intravascular optical coherent tomography (IV-OCT) probe in this paper. Instead of using any electrically driven scanning device, the probe makes use of the kinetic energy of the fluid that flushes away the blood during the intravascular optical coherence tomography imaging. The probe converts it into the rotational kinetic energy of the propeller, and the rotation of the rectangular prism mounted on the propeller shaft enables the scanning of the beam. The probe is low cost, and enables unobstructed stable circumferential scanning over 360 deg. The experimental results show that the probe scanning speed can exceed 100 rotations per second (rps). Spectral-domain OCT imaging of a phantom and porcine cardiac artery are demonstrated with axial resolution of 13.6 μm, lateral resolution of 22 μm, and sensitivity of 101.7 dB. We present technically the passively driven IV-OCT probe in full detail and discuss how to optimize the probe in further.

Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuwahara, Makoto, E-mail: kuwahara@esi.nagoya-u.ac.jp; Saitoh, Koh; Tanaka, Nobuo

2014-11-10

The brightness and interference fringes of a spin-polarized electron beam extracted from a semiconductor photocathode excited by laser irradiation are directly measured via its use in a transmission electron microscope. The brightness was 3.8 × 10{sup 7 }A cm{sup −2 }sr{sup −1} for a 30-keV beam energy with the polarization of 82%, which corresponds to 3.1 × 10{sup 8 }A cm{sup −2 }sr{sup −1} for a 200-keV beam energy. The resulting electron beam exhibited a long coherence length at the specimen position due to the high parallelism of (1.7 ± 0.3) × 10{sup −5 }rad, which generated interference fringes representative of a first-order correlation using an electron biprism. The beam also had amore » high degeneracy of electron wavepacket of 4 × 10{sup −6}. Due to the high polarization, the high degeneracy and the long coherence length, the spin-polarized electron beam can enhance the antibunching effect.« less

Start-to-end simulation of the shot-noise driven microbunching instability experiment at the Linac Coherent Light Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiang, J.; Ding, Y.; Emma, P.

The shot-noise driven microbunching instability can significantly degrade electron beam quality in x-ray free electron laser light sources. Experiments were carried out at the Linac Coherent Light Source (LCLS) to study this instability. Here in this paper, we present start-to-end simulations of the shot-noise driven microbunching instability experiment at the LCLS using the real number of electrons. The simulation results reproduce the measurements quite well. A microbunching self-heating mechanism is also illustrated in the simulation, which helps explain the experimental observation.

Start-to-end simulation of the shot-noise driven microbunching instability experiment at the Linac Coherent Light Source

DOE PAGES

Qiang, J.; Ding, Y.; Emma, P.; ...

2017-05-23

The shot-noise driven microbunching instability can significantly degrade electron beam quality in x-ray free electron laser light sources. Experiments were carried out at the Linac Coherent Light Source (LCLS) to study this instability. Here in this paper, we present start-to-end simulations of the shot-noise driven microbunching instability experiment at the LCLS using the real number of electrons. The simulation results reproduce the measurements quite well. A microbunching self-heating mechanism is also illustrated in the simulation, which helps explain the experimental observation.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

NASA Astrophysics Data System (ADS)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present new insight into the physics of nonlinear coherent pulse propagation phenomena in active (semiconductor) gain media. Our numerical full time-domain simulations are shown to generally agree well with analytical predictions, while in the case of optical pulses with large pulse areas or few-cycle pulses they reveal the limits of analytic approaches. Finally, it is demonstrated that coherent ultrafast nonlinear propagation effects become less distinctive if we apply a realistic model of the quantum well semiconductor gain material, consider characteristic loss channels and take into account de-phasing processes and homogeneous broadening.

Proposed Laser-driven, Dielectric Microstructure Few-cm Long Undulator for Attosecond Coherent X-rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Plettner, T; Byer, R.L.; /Stanford U., Ginzton Lab.

This article presents the concept of an all-dielectric laser-driven undulator for the generation of coherent X-rays. The proposed laser-driven undulator is expected to produce internal deflection forces equivalent to a several-Tesla magnetic field acting on a speed-of-light particle. The key idea for this laser-driven undulator is its ability to provide phase synchronicity between the deflection force and the electron beam for a distance that is much greater than the laser wavelength. The potential advantage of this undulator is illustrated with a possible design example that assumes a small laser accelerator which delivers a 2 GeV, 1 pC, 1 kHz electronmore » bunch train to a 10 cm long, 1/2 mm period laser-driven undulator. Such an undulator could produce coherent X-ray pulses with {approx}10{sup 9} photons of 64 keV energy. The numerical modeling for the expected X-ray pulse shape was performed with GENESIS, which predicts X-ray pulse durations in the few-attosecond range. Possible applications for nonlinear electromagnetic effects from these X-ray pulses are briefly discussed.« less

White-light parametric instabilities in plasmas.

PubMed

Santos, J E; Silva, L O; Bingham, R

2007-06-08

Parametric instabilities driven by partially coherent radiation in plasmas are described by a generalized statistical Wigner-Moyal set of equations, formally equivalent to the full wave equation, coupled to the plasma fluid equations. A generalized dispersion relation for stimulated Raman scattering driven by a partially coherent pump field is derived, revealing a growth rate dependence, with the coherence width sigma of the radiation field, scaling with 1/sigma for backscattering (three-wave process), and with 1/sigma1/2 for direct forward scattering (four-wave process). Our results demonstrate the possibility to control the growth rates of these instabilities by properly using broadband pump radiation fields.

Applications of Optical Coherent Transient Technology to Pulse Shaping, Spectral Filtering Arbitrary Waveform Generation and RF Beamforming

DTIC Science & Technology

2006-04-14

the EOPM (~1 mW) was amplified by injection locking of a high power diode laser and further amplified to ~300 mW with a semiconductor optical ...The spectra of 8 GHz CW phase modulated signals in cascaded injection locking system from (a) master laser ; (b) the first slave, and (c) the second...cascaded injection locked amplifiers at 793nm, and frequency chirped lasers at 793nm. 15. SUBJECT TERMS Optical Coherent Transients, Spatial

Doubled full shot noise in quantum coherent superconductor-semiconductor junctions.

PubMed

Lefloch, F; Hoffmann, C; Sanquer, M; Quirion, D

2003-02-14

We performed low temperature shot noise measurements in superconductor (TiN) strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple Andreev reflections at low energy and that the shot noise is then twice the Poisson noise (S = 4eI). When the subgap conductance reaches its minimum at finite voltage the shot noise changes to the normal value (S = 2eI) due to a large quasiparticle contribution.

Dissipative transport in superlattices within the Wigner function formalism

DOE PAGES

Jonasson, O.; Knezevic, I.

2015-07-30

Here, we employ the Wigner function formalism to simulate partially coherent, dissipative electron transport in biased semiconductor superlattices. We introduce a model collision integral with terms that describe energy dissipation, momentum relaxation, and the decay of spatial coherences (localization). Based on a particle-based solution to the Wigner transport equation with the model collision integral, we simulate quantum electronic transport at 10 K in a GaAs/AlGaAs superlattice and accurately reproduce its current density vs field characteristics obtained in experiment.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lichterman, Michael F.; Sun, Ke; Hu, Shu

Small-band-gap (E g < 2 eV) semiconductors must be stabilized for use in integrated devices that convert solar energy into the bonding energy of a reduced fuel, specifically H 2 (g) or a reduced-carbon species such as CH 3 OH or CH 4 . To sustainably and scalably complete the fuel cycle, electrons must be liberated through the oxidation of water to O 2 (g). Strongly acidic or strongly alkaline electrolytes are needed to enable efficient and intrinsically safe operation of a full solar-driven water-splitting system. But, under water-oxidation conditions, the small-band-gap semiconductors required for efficient cell operation aremore » unstable, either dissolving or forming insulating surface oxides. Here, we describe herein recent progress in the protection of semiconductor photoanodes under such operational conditions. We specifically describe the properties of two protective overlayers, TiO 2 /Ni and NiO x , both of which have demonstrated the ability to protect otherwise unstable semiconductors for > 100 h of continuous solar-driven water oxidation when in contact with a highly alkaline aqueous electrolyte (1.0 M KOH(aq)). Furthermore, the stabilization of various semiconductor photoanodes is reviewed in the context of the electronic characteristics and a mechanistic analysis of the TiO 2 films, along with a discussion of the optical, catalytic, and electronic nature of NiO x films for stabilization of semiconductor photoanodes for water oxidation.« less

Coherent phonon optics in a chip with an electrically controlled active device.

PubMed

Poyser, Caroline L; Akimov, Andrey V; Campion, Richard P; Kent, Anthony J

2015-02-05

Phonon optics concerns operations with high-frequency acoustic waves in solid media in a similar way to how traditional optics operates with the light beams (i.e. photons). Phonon optics experiments with coherent terahertz and sub-terahertz phonons promise a revolution in various technical applications related to high-frequency acoustics, imaging, and heat transport. Previously, phonon optics used passive methods for manipulations with propagating phonon beams that did not enable their external control. Here we fabricate a phononic chip, which includes a generator of coherent monochromatic phonons with frequency 378 GHz, a sensitive coherent phonon detector, and an active layer: a doped semiconductor superlattice, with electrical contacts, inserted into the phonon propagation path. In the experiments, we demonstrate the modulation of the coherent phonon flux by an external electrical bias applied to the active layer. Phonon optics using external control broadens the spectrum of prospective applications of phononics on the nanometer scale.

Coherent quantum depletion of an interacting atom condensate

PubMed Central

Kira, M.

2015-01-01

Sufficiently strong interactions promote coherent quantum transitions in spite of thermalization and losses, which are the adversaries of delicate effects such as reversibility and correlations. In atomic Bose–Einstein condensates (BECs), strong atom–atom interactions can eject atoms from the BEC to the normal component, yielding quantum depletion instead of temperature depletion. A recent experiment has already been verified to overcome losses. Here I show that it also achieves coherent quantum-depletion dynamics in a BEC swept fast enough from weak to strong atom–atom interactions. The elementary coherent process first excites the normal component into a liquid state that evolves into a spherical shell state, where the atom occupation peaks at a finite momentum to shield 50% of the BEC atoms from annihilation. The identified coherent processes resemble ultrafast semiconductor excitations expanding the scope of BEC explorations to many-body non-equilibrium studies. PMID:25767044

A Brief History of ... Semiconductors

ERIC Educational Resources Information Center

Jenkins, Tudor

2005-01-01

The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

Nanometals for Solar-to-Chemical Energy Conversion: From Semiconductor-Based Photocatalysis to Plasmon-Mediated Photocatalysis and Photo-Thermocatalysis.

PubMed

Meng, Xianguang; Liu, Lequan; Ouyang, Shuxin; Xu, Hua; Wang, Defa; Zhao, Naiqin; Ye, Jinhua

2016-08-01

Nanometal materials play very important roles in solar-to-chemical energy conversion due to their unique catalytic and optical characteristics. They have found wide applications from semiconductor photocatalysis to rapidly growing surface plasmon-mediated heterogeneous catalysis. The recent research achievements of nanometals are reviewed here, with regard to applications in semiconductor photocatalysis, plasmonic photocatalysis, and plasmonic photo-thermocatalysis. As the first important topic discussed here, the latest progress in the design of nanometal cocatalysts and their applications in semiconductor photocatalysis are introduced. Then, plasmonic photocatalysis and plasmonic photo-thermocatalysis are discussed. A better understanding of electron-driven and temperature-driven catalytic behaviors over plasmonic nanometals is helpful to bridge the present gap between the communities of photocatalysis and conventional catalysis controlled by temperature. The objective here is to provide instructive information on how to take the advantages of the unique functions of nanometals in different types of catalytic processes to improve the efficiency of solar-energy utilization for more practical artificial photosynthesis. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Superconductivity driven by pairing of the coherent parts of the physical electrons

NASA Astrophysics Data System (ADS)

Su, Yuehua; Zhang, Chao

2018-03-01

How the superconductivity in unconventional superconductors emerges from the diverse mother normal states is still a big puzzle. Whatever the mother normal states are the superconductivity is normal with BCS-like behaviours of the paired quasiparticles in condensation. To reconcile the diverse mother normal states and the normal superconductivity in unconventional superconductors, we revisit a proposal that the emergence of the low-energy coherent parts of the physical electrons, which survive from the interaction correlations, is an essential prerequisite for superconductivity. The superconductivity is driven by the pair condensation of these coherent parts of the physical electrons. Moreover the incoherent parts of the physical electrons can enhance the superconducting transition temperature Tc although they are not in driving role in the emergence of the superconductivity. Some experimental responses of the coherent parts of the physical electrons are predicted.

Ultrafast magnetization modulation induced by the electric field component of a terahertz pulse in a ferromagnetic-semiconductor thin film.

PubMed

Ishii, Tomoaki; Yamakawa, Hiromichi; Kanaki, Toshiki; Miyamoto, Tatsuya; Kida, Noriaki; Okamoto, Hiroshi; Tanaka, Masaaki; Ohya, Shinobu

2018-05-02

High-speed magnetization control of ferromagnetic films using light pulses is attracting considerable attention and is increasingly important for the development of spintronic devices. Irradiation with a nearly monocyclic terahertz pulse, which can induce strong electromagnetic fields in ferromagnetic films within an extremely short time of less than ~1 ps, is promising for damping-free high-speed coherent control of the magnetization. Here, we successfully observe a terahertz response in a ferromagnetic-semiconductor thin film. In addition, we find that a similar terahertz response is observed even in a non-magnetic semiconductor and reveal that the electric-field component of the terahertz pulse plays a crucial role in the magnetization response through the spin-carrier interactions in a ferromagnetic-semiconductor thin film. Our findings will provide new guidelines for designing materials suitable for ultrafast magnetization reversal.

Power- or frequency-driven hysteresis for continuous-wave optically injected distributed-feedback semiconductor lasers.

PubMed

Blin, Stéphane; Vaudel, Olivier; Besnard, Pascal; Gabet, Renaud

2009-05-25

Bistabilities between a steady (or pulsating, chaotic) and different pulsating regimes are investigated for an optically injected semi-conductor laser. Both numerical and experimental studies are reported for continuous-wave single-mode semiconductor distributed-feedback lasers emitting at 1.55 microm. Hysteresis are driven by either changing the optically injected power or the frequency difference between both lasers. The effect of the injected laser pumping rate is also examined. Systematic mappings of the possible laser outputs (injection locking, bimodal, wave mixing, chaos or relaxation oscillations) are carried out. At small pumping rates (1.2 times threshold), only locking and bimodal regimes are observed. The extent of the bistable area is either 11 dB or 35 GHz, depending on the varying parameters. At high pumping rates (4 times threshold), numerous injection regimes are observed. Injection locking and its bistabilities are also reported for secondary longitudinal modes.

Colossal change in thermopower with temperature-driven p-n-type conduction switching in La x Sr2-x TiFeO6 double perovskites

NASA Astrophysics Data System (ADS)

Roy, Pinku; Maiti, Tanmoy

2018-02-01

Double perovskite materials have been studied in detail by many researchers, as their magnetic and electronic properties can be controlled by the substitution of alkaline earth metals or lanthanides in the A site and transition metals in the B site. Here we report the temperature-driven, p-n-type conduction switching assisted, large change in thermopower in La3+-doped Sr2TiFeO6-based double perovskites. Stoichiometric compositions of La x Sr2-x TiFeO6 (LSTF) with 0  ⩽  x  ⩽  0.25 were synthesized by the solid-state reaction method. Rietveld refinement of room-temperature XRD data confirmed a single-phase solid solution with cubic crystal structure and Pm\\bar{3}m space group. From temperature-dependent electrical conductivity and Seebeck coefficient (S) studies it is evident that all the compositions underwent an intermediate semiconductor-to-metal transition before the semiconductor phase reappeared at higher temperature. In the process of semiconductor-metal-semiconductor transition, LSTF compositions demonstrated temperature-driven p-n-type conduction switching behavior. The electronic restructuring which occurs due to the intermediate metallic phase between semiconductor phases leads to the colossal change in S for LSTF oxides. The maximum drop in thermopower (ΔS ~ 2516 µV K-1) was observed for LSTF with x  =  0.1 composition. Owing to their enormous change in thermopower of the order of millivolts per kelvin, integrated with p-n-type resistance switching, these double perovskites can be used for various high-temperature multifunctional device applications such as diodes, sensors, switches, thermistors, thyristors, thermal runaway monitors etc. Furthermore, the conduction mechanisms of these oxides were explained by the small polaron hopping model.

Mirror-assisted coherent backscattering from the Mollow sidebands

NASA Astrophysics Data System (ADS)

Piovella, N.; Teixeira, R. Celistrino; Kaiser, R.; Courteille, Ph. W.; Bachelard, R.

2017-11-01

In front of a mirror, the radiation of weakly driven large disordered clouds presents an interference fringe in the backward direction, on top of an incoherent background. Although strongly driven atoms usually present little coherent scattering, we show here that the mirror-assisted version can produce high contrast fringes, for arbitrarily high saturation parameters. The contrast of the fringes oscillates with the Rabi frequency of the atomic transition and the distance between the mirror and the atoms, due to the coherent interference between the carrier and the Mollow sidebands of the saturated resonant fluorescence spectrum emitted by the atoms. The setup thus represents a powerful platform to study the spectral properties of ensembles of correlated scatterers.

Controlling Spin Coherence with Semiconductor Nanostructures

NASA Astrophysics Data System (ADS)

Awschalom, David D.

We present two emerging opportunities for manipulating and communicating coherent spin states in semiconductors. First, we show that semiconductor microcavities offer unique means of controlling light-matter interactions in confined geometries, resulting in a wide range of applications in optical communications and inspiring proposals for quantum information processing and computational schemes. Studies of spin dynamics in microcavities — a new and promising research field — have revealed novel effects such as polarization beats, stimulated spin scattering, and giant Faraday rotation. Here, we study the electron spin dynamics in optically-pumped GaAs microdisk lasers with quantum wells and interface-fluctuation quantum dots in the active region. In particular, we examine how the electron spin dynamics are modified by the stimulated emission in the disks, and observe an enhancement of the spin coherence time when the optical excitation is in resonance with a high quality (Q ~ 5000) lasing mode.1 This resonant enhancement, contrary to expectations from the observed trend in the carrier recombination time, is then manipulated by altering the cavity design and dimensions. In analogy to devices based on excitonic coherence, this ability to engineer coherent interactions between electron spins and photons may provide novel pathways towards spin dependent quantum optoelectronics. In a second example, the nitrogen-vacancy (N-V) center in diamond has garnered interest as a room-temperature solid-state system not only for exploring electronic and nuclear spin phenomena but also as a candidate for spin-based quantum information processing. Spin coherence times of up to 50 microseconds have been reported for ensembles of N-V centers and a two-qubit gate utilizing the electron spin of a N-V center and the nuclear spin of a nearby C-13 atom has been demonstrated. Here, we present experiments using angle-resolved magneto-photoluminescence microscopy to investigate anisotropic spin interactions of single N-V centers in diamond at room temperature.2 Negative peaks in the photoluminescence intensity are observed as a function of both magnetic field magnitude and angle, and can be explained by coherent spin precession and anisotropic relaxation at spin-level anticrossings. Additionally, precise field alignment with the symmetry axis of a single N-V center reveals the resonant magnetic dipolar coupling of a single "bright" electron spin of an N-V center to small numbers of "dark" spins of nitrogen defects in its immediate vicinity, which are otherwise undetected by photoluminescence. Most recently, we are exploring the possibility of utilizing this magnetic dipole coupling between bright and dark spins to couple two spatially separated single N-V center spins by means of intermediate nitrogen spins. Note from Publisher: This article contains the abstract only.

Biaxial stress driven tetragonal symmetry breaking and high-temperature ferromagnetic semiconductor from half-metallic CrO2

NASA Astrophysics Data System (ADS)

Xiao, Xiang-Bo; Liu, Bang-Gui

2018-03-01

It is highly desirable to combine the full spin polarization of carriers with modern semiconductor technology for spintronic applications. For this purpose, one needs good crystalline ferromagnetic (or ferrimagnetic) semiconductors with high Curie temperatures. Rutile CrO2 is a half-metallic spintronic material with Curie temperature 394 K and can have nearly full spin polarization at room temperature. Here, we find through first-principles investigation that when a biaxial compressive stress is applied on rutile CrO2, the density of states at the Fermi level decreases with the in-plane compressive strain, there is a structural phase transition to an orthorhombic phase at the strain of -5.6 % , and then appears an electronic phase transition to a semiconductor phase at -6.1 % . Further analysis shows that this structural transition, accompanying the tetragonal symmetry breaking, is induced by the stress-driven distortion and rotation of the oxygen octahedron of Cr, and the half-metal-semiconductor transition originates from the enhancement of the crystal field splitting due to the structural change. Importantly, our systematic total-energy comparison indicates the ferromagnetic Curie temperature remains almost independent of the strain, near 400 K. This biaxial stress can be realized by applying biaxial pressure or growing the CrO2 epitaxially on appropriate substrates. These results should be useful for realizing full (100%) spin polarization of controllable carriers as one uses in modern semiconductor technology.

Coherent Control of Scattering Processes in Semiconductors

NASA Astrophysics Data System (ADS)

Wehner, M. U.

1998-03-01

On a timescale which compares to the duration of single scattering events, the relaxation of optical excitations in semiconductors has to be described by the quantum kinetic theory. Instead of simple scattering rates this theory delivers a non-Markovian dephasing. Related memory effects have so far been observed for the case of electron-LO-phonon scattering in four-wave-mixing experiments on GaAs at T = 77 K using 15 fs pulses (L. Bányai, D.B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M.U. Wehner, T. Marschner, M. Wegener and W. Stolz, Phys. Rev. Lett. 75), 2188 (1995). It is crucial for the quantum kinetic time regime that scattering processes must not be considered as completed and irreversibel. The reversibility of the scattering shortly after optical excitation is demonstrated in four-wave-mixing experiments using coherent control. By adjusting the relative phase of two phase-locked pulses, the non-Markovian phonon oscillations observed in Ref.1 can be either suppressed or amplified (M. U. Wehner, M. H. Ulm, D. S. Chemla and M. Wegener, Phys. Rev. Lett. submitted). The behavior of the coherently controlled scattering amplitude is discussed using a simple model Hamiltonian, which describes the variation of the phonon oscillations in amplitude and phase very well.

Spin-orbit qubit in a semiconductor nanowire.

PubMed

Nadj-Perge, S; Frolov, S M; Bakkers, E P A M; Kouwenhoven, L P

2010-12-23

Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to control spins electrically and thus lies at the foundation of spintronics. Even at the level of single electrons, the spin-orbit interaction has proven promising for coherent spin rotations. Here we implement a spin-orbit quantum bit (qubit) in an indium arsenide nanowire, where the spin-orbit interaction is so strong that spin and motion can no longer be separated. In this regime, we realize fast qubit rotations and universal single-qubit control using only electric fields; the qubits are hosted in single-electron quantum dots that are individually addressable. We enhance coherence by dynamically decoupling the qubits from the environment. Nanowires offer various advantages for quantum computing: they can serve as one-dimensional templates for scalable qubit registers, and it is possible to vary the material even during wire growth. Such flexibility can be used to design wires with suppressed decoherence and to push semiconductor qubit fidelities towards error correction levels. Furthermore, electrical dots can be integrated with optical dots in p-n junction nanowires. The coherence times achieved here are sufficient for the conversion of an electronic qubit into a photon, which can serve as a flying qubit for long-distance quantum communication.

Disorder induced spin coherence in polyfluorene thin film semiconductors

NASA Astrophysics Data System (ADS)

Miller, Richard G.; van Schooten, Kipp; Malissa, Hans; Waters, David P.; Lupton, John M.; Boehme, Christoph

2014-03-01

Charge carrier spins in polymeric organic semiconductors significantly influence magneto-optoelectronic properties of these materials. In particular, spin relaxation times influence magnetoresistance and electroluminescence. We have studied the role of structural and electronic disorder in polaron spin-relaxation times. As a model polymer, we used polyfluorene, which can exist in two distinct morphologies: an amorphous (glassy) and an ordered (beta) phase. The phases can be controlled in thin films by preparation parameters and verified by photoluminescence spectroscopy. We conducted pulsed electrically detected magnetic resonance (pEDMR) measurements to determine spin-dephasing times by transient current measurements under bipolar charge carrier injection conditions and a forward bias. The measurements showed that, contrary to intuition, spin-dephasing times increase with material disorder. We attribute this behavior to a reduction in hyperfine field strength for carriers in the glassy phase due to increased structural disorder in the hydrogenated side chains, leading to longer spin coherence times. We acknowledge support by the Department of Energy, Office of Basic Energy Sciences under Award #DE-SC0000909.

Spatial Distortion of Vibration Modes via Magnetic Correlation of Impurities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krasniqi, Faton S.; Zhong, Yinpeng; Epp, S. W.

Long wavelength vibrational modes in the ferromagnetic semiconductor Ga 0.91M n0.09As are investigated using time resolved x-ray diffraction. At room temperature, we measure oscillations in the x-ray diffraction intensity corresponding to coherent vibrational modes with well-defined wavelengths. When the correlation of magnetic impurities sets in, we observe the transition of the lattice into a disordered state that does not support coherent modes at large wavelengths. Our measurements point toward a magnetically induced broadening of long wavelength vibrational modes in momentum space and their quasilocalization in the real space. More specifically, long wavelength vibrational modes cannot be assigned to a singlemore » wavelength but rather should be represented as a superposition of plane waves with different wavelengths. Lastly, our findings have strong implications for the phonon-related processes, especially carrier-phonon and phonon-phonon scattering, which govern the electrical conductivity and thermal management of semiconductor-based devices.« less

Multiclustered chimeras in large semiconductor laser arrays with nonlocal interactions

NASA Astrophysics Data System (ADS)

Shena, J.; Hizanidis, J.; Hövel, P.; Tsironis, G. P.

2017-09-01

The dynamics of a large array of coupled semiconductor lasers is studied numerically for a nonlocal coupling scheme. Our focus is on chimera states, a self-organized spatiotemporal pattern of coexisting coherence and incoherence. In laser systems, such states have been previously found for global and nearest-neighbor coupling, mainly in small networks. The technological advantage of large arrays has motivated us to study a system of 200 nonlocally coupled lasers with respect to the emerging collective dynamics. Moreover, the nonlocal nature of the coupling allows us to obtain robust chimera states with multiple (in)coherent domains. The crucial parameters are the coupling strength, the coupling phase and the range of the nonlocal interaction. We find that multiclustered chimera states exist in a wide region of the parameter space and we provide quantitative characterization for the obtained spatiotemporal patterns. By proposing two different experimental setups for the realization of the nonlocal coupling scheme, we are confident that our results can be confirmed in the laboratory.

Spatial Distortion of Vibration Modes via Magnetic Correlation of Impurities

DOE PAGES

Krasniqi, Faton S.; Zhong, Yinpeng; Epp, S. W.; ...

2018-03-08

Long wavelength vibrational modes in the ferromagnetic semiconductor Ga 0.91M n0.09As are investigated using time resolved x-ray diffraction. At room temperature, we measure oscillations in the x-ray diffraction intensity corresponding to coherent vibrational modes with well-defined wavelengths. When the correlation of magnetic impurities sets in, we observe the transition of the lattice into a disordered state that does not support coherent modes at large wavelengths. Our measurements point toward a magnetically induced broadening of long wavelength vibrational modes in momentum space and their quasilocalization in the real space. More specifically, long wavelength vibrational modes cannot be assigned to a singlemore » wavelength but rather should be represented as a superposition of plane waves with different wavelengths. Lastly, our findings have strong implications for the phonon-related processes, especially carrier-phonon and phonon-phonon scattering, which govern the electrical conductivity and thermal management of semiconductor-based devices.« less

Data-driven sensor placement from coherent fluid structures

NASA Astrophysics Data System (ADS)

Manohar, Krithika; Kaiser, Eurika; Brunton, Bingni W.; Kutz, J. Nathan; Brunton, Steven L.

2017-11-01

Optimal sensor placement is a central challenge in the prediction, estimation and control of fluid flows. We reinterpret sensor placement as optimizing discrete samples of coherent fluid structures for full state reconstruction. This permits a drastic reduction in the number of sensors required for faithful reconstruction, since complex fluid interactions can often be described by a small number of coherent structures. Our work optimizes point sensors using the pivoted matrix QR factorization to sample coherent structures directly computed from flow data. We apply this sampling technique in conjunction with various data-driven modal identification methods, including the proper orthogonal decomposition (POD) and dynamic mode decomposition (DMD). In contrast to POD-based sensors, DMD demonstrably enables the optimization of sensors for prediction in systems exhibiting multiple scales of dynamics. Finally, reconstruction accuracy from pivot sensors is shown to be competitive with sensors obtained using traditional computationally prohibitive optimization methods.

Development of Room Temperature Excitonic Lasing From ZnO and MgZnO Thin Film Based Metal-Semiconductor-Metal Devices

NASA Astrophysics Data System (ADS)

Suja, Mohammad Zahir Uddin

Room temperature excitonic lasing is demonstrated and developed by utilizing metal-semiconductor-metal devices based on ZnO and MgZnO materials. At first, Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films and the best conductivity is achieved with a high hole concentration of 1.54x1018 cm-3, a low resistivity of 0.6 O cm and a moderate mobility of 6.65 cm2 V -1 s-1 at room temperature. Metal oxide semiconductor (MOS) capacitor devices have been fabricated on the Cu-doped ZnO films and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as XRD, XPS, Raman and absorption are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. To overcome the stability issue of p-type ZnO film, alternate devices other than p-n junction has been developed. Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing. Our results suggest that plasmon-enhanced ZnO MSM random lasers can become a competitive candidate of efficient ultraviolet light sources. Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this thesis, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29 33 A/cm2 are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.

Exchange interaction and the tunneling induced transparency in coupled quantum dots

NASA Astrophysics Data System (ADS)

Borges, Halyne; Alcalde, Augusto; Ulloa, Sergio

2014-03-01

Stacked semiconductor quantum dots coupled by tunneling are unique ``quantum molecule'' where it is possible to create a multilevel structure of excitonic states. This structure allows the investigation of quantum interference processes and their control via electric external fields. In this work, we investigate the optical response of a quantum molecule coherently driven by a polarized laser, considering the splitting in excitonic levels caused by isotropic and anisotropic exchange interactions. In our model we consider interdot transitions mediated by the the hole tunneling between states with the same total spin and, between bright and dark exciton states. Using realistic experimental parameters, we demonstrate that the excitonic states coupled by tunneling exhibit an enriched and controllable optical response. Our results show that through the appropriate control of the external electric field and light polarization, the tunneling coupling establishes an efficient destructive quantum interference path that creates a transparency window in the absorption spectra, whenever states of appropriate symmetry are mixed by the hole tunneling. We explore the relevant parameters space that would allows with the experiments. CAPES, INCT-IQ and MWN/CIAM-NSF.

Impurity-assisted electric control of spin-valley qubits in monolayer MoS2

NASA Astrophysics Data System (ADS)

Széchenyi, G.; Chirolli, L.; Pályi, A.

2018-07-01

We theoretically study a single-electron spin-valley qubit in an electrostatically defined quantum dot in a transition metal dichalcogenide monolayer, focusing on the example of MoS2. Coupling of the qubit basis states for coherent control is challenging, as it requires a simultaneous flip of spin and valley. Here, we show that a tilted magnetic field together with a short-range impurity, such as a vacancy, a substitutional defect, or an adatom, can give rise to a coupling between the qubit basis states. This mechanism renders the in-plane g-factor nonzero, and allows to control the qubit with an in-plane ac electric field, akin to electrically driven spin resonance. We evaluate the dependence of the in-plane g-factor and the electrically induced qubit Rabi frequency on the type and position of the impurity. We reveal highly unconventional features of the coupling mechanism, arising from symmetry-forbidden intervalley scattering, in the case when the impurity is located at a S site. Our results provide design guidelines for electrically controllable qubits in two-dimensional semiconductors.

Probing Electron-Phonon Interaction through Two-Photon Interference in Resonantly Driven Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Reigue, Antoine; Iles-Smith, Jake; Lux, Fabian; Monniello, Léonard; Bernard, Mathieu; Margaillan, Florent; Lemaitre, Aristide; Martinez, Anthony; McCutcheon, Dara P. S.; Mørk, Jesper; Hostein, Richard; Voliotis, Valia

2017-06-01

We investigate the temperature dependence of photon coherence properties through two-photon interference (TPI) measurements from a single quantum dot (QD) under resonant excitation. We show that the loss of indistinguishability is related only to the electron-phonon coupling and is not affected by spectral diffusion. Through these measurements and a complementary microscopic theory, we identify two independent separate decoherence processes, both of which are associated with phonons. Below 10 K, we find that the relaxation of the vibrational lattice is the dominant contribution to the loss of TPI visibility. This process is non-Markovian in nature and corresponds to real phonon transitions resulting in a broad phonon sideband in the QD emission spectra. Above 10 K, virtual phonon transitions to higher lying excited states in the QD become the dominant dephasing mechanism, this leads to a broadening of the zero phonon line, and a corresponding rapid decay in the visibility. The microscopic theory we develop provides analytic expressions for the dephasing rates for both virtual phonon scattering and non-Markovian lattice relaxation.

Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors

NASA Astrophysics Data System (ADS)

Mascarenhas, Angelo; Fluegel, Brian; Beaton, Dan

Semiconductor strain engineering has become a critical feature of high-performance electronics due to the significant device performance enhancements it enables. These improvements that emerge from strain induced modifications to the electronic band structure necessitate new ultra-sensitive tools for probing strain in semiconductors. Using electronic Raman scattering, we recently showed that it is possible to measure minute amounts of strain in thin semiconductor epilayers. We applied this strain measurement technique to two different semiconductor alloy systems, using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10-4. Comparing our strain sensitivity and signal strength in AlxGa1-xAs with those obtained using the industry-standard technique of phonon Raman scattering we found a sensitivity improvement of ×200, and a signal enhancement of 4 ×103 thus obviating key constraints in semiconductor strain metrology. The sensitivity of this approach rivals that of contemporary techniques and opens up a new realm for optically probing strain effects on electronic band structure. We acknowledge the financial support of the DOE Office of Science, BES under DE-AC36-80GO28308.

Observation of Multi-bunch Interference with Coherent Synchrotron Radiation

NASA Astrophysics Data System (ADS)

Billinghurst, B. E.; May, T.; Bergstrom, J.; DeJong, M.; Dallin, L.

2010-02-01

The observation of Multi-bunch interference with coherent synchrotron radiation at the Canadian Light Source is discussed along with the possibility that some of the spectral features are driven by the radiation impedance of the vacuum chamber.

Quantifying stochasticity in the dynamics of delay-coupled semiconductor lasers via forbidden patterns.

PubMed

Tiana-Alsina, Jordi; Buldú, Javier M; Torrent, M C; García-Ojalvo, Jordi

2010-01-28

We quantify the level of stochasticity in the dynamics of two mutually coupled semiconductor lasers. Specifically, we concentrate on a regime in which the lasers synchronize their dynamics with a non-zero lag time, and the leader and laggard roles alternate irregularly between the lasers. We analyse this switching dynamics in terms of the number of forbidden patterns of the alternate time series. The results reveal that the system operates in a stochastic regime, with the level of stochasticity decreasing as the lasers are pumped further away from their lasing threshold. This behaviour is similar to that exhibited by a single semiconductor laser subject to external optical feedback, as its dynamics shifts from the regime of low-frequency fluctuations to coherence collapse. This journal is © 2010 The Royal Society

SEMICONDUCTOR PHYSICS Dose-rate dependence of optically stimulated luminescence signal

NASA Astrophysics Data System (ADS)

Pingqiang, Wei; Zhaoyang, Chen; Yanwei, Fan; Yurun, Sun; Yun, Zhao

2010-10-01

Optically stimulated luminescence (OSL) is the luminescence emitted from a semiconductor during its exposure to light. The OSL intensity is a function of the total dose absorbed by the sample. The dose-rate dependence of the OSL signal of the semiconductor CaS doped Ce and Sm was studied by numerical simulation and experiments. Based on a one-trap/one-center model, the whole OSL process was represented by a series of differential equations. The dose-rate properties of the materials were acquired theoretically by solving the equations. Good coherence was achieved between numerical simulation and experiments, both of which showed that the OSL signal was independent of dose rate. This result validates that when using OSL as a dosimetry technique, the dose-rate effect can be neglected.

A semiconductor photon-sorter

NASA Astrophysics Data System (ADS)

Bennett, A. J.; Lee, J. P.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

2016-10-01

Obtaining substantial nonlinear effects at the single-photon level is a considerable challenge that holds great potential for quantum optical measurements and information processing. Of the progress that has been made in recent years one of the most promising methods is to scatter coherent light from quantum emitters, imprinting quantum correlations onto the photons. We report effective interactions between photons, controlled by a single semiconductor quantum dot that is weakly coupled to a monolithic cavity. We show that the nonlinearity of a transition modifies the counting statistics of a Poissonian beam, sorting the photons in number. This is used to create strong correlations between detection events and to create polarization-correlated photons from an uncorrelated stream using a single spin. These results pave the way for semiconductor optical switches operated by single quanta of light.

Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

NASA Astrophysics Data System (ADS)

Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

2018-04-01

The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

Intensity noise limit in a phase-sensitive optical time-domain reflectometer with a semiconductor laser source

NASA Astrophysics Data System (ADS)

E Alekseev, A.; Tezadov, Ya A.; Potapov, V. T.

2017-05-01

In the present paper we perform, for the first time, the analysis of the average intensity noise power level at the output of a coherent phase-sensitive optical time-domain reflectometer (phase-OTDR) with a semiconductor laser source. The origin of the considered intensity noise lies in random phase fluctuations of a semiconductor laser source field. These phase fluctuations are converted to intensity noise in the process of interference of backscattered light. This intensity noise inevitably emerges in every phase-OTDR spatial channel and limits its sensitivity to external phase actions. The analysis of intensity noise in a phase-OTDR was based on the study of a fiber scattered-light interferometer (FSLI) which is treated as the constituent part of OTDR. When considered independently, FSLI has a broad intensity noise spectrum at its output; when FSLI is treated as a part of a phase-OTDR, due to aliasing effect, the wide FSLI noise spectrum is folded within the spectral band, determined by the probe pulse repetition frequency. In the analysis one of the conventional phase-OTDR schemes with rectangular dual-pulse probe signal was considered, the FSLI, which corresponds to this OTDR scheme, has two scattering fiber segments with additional time delay introduced between backscattered fields. The average intensity noise power and resulting noise spectrum at the output of this FSLI are determined by the degree of coherence of the semiconductor laser source, the length of the scattering fiber segments and by the additional time delay between the scattering segments. The average intensity noise characteristics at the output of the corresponding phase-OTDR are determined by the analogous parameters: the source coherence, the lengths of the parts constituting the dual-pulse and the time interval which separates the parts of the dual-pulse. In the paper the expression for the average noise power spectral density (NPSD) at the output of FSLI was theoretically derived and experimentally verified. Based on the found average NPSD of FSLI, a simple relation connecting the phase-OTDR parameters and the limiting level of full average intensity noise power at its output was derived. This relation was verified by experimental measurement of the average noise power at the output of phase-OTDR. The limiting noise level, considered in the paper, determines the fundamental noise floor for the phase-OTDR with given parameters of the source coherence, probe pulse length and time delay between two pulses constituting the dual-pulse.

Holographic Optical Coherence Imaging of Rat Osteogenic Sarcoma Tumor Spheroids

NASA Astrophysics Data System (ADS)

Yu, Ping; Mustata, Mirela; Peng, Leilei; Turek, John J.; Melloch, Michael R.; French, Paul M. W.; Nolte, David D.

2004-09-01

Holographic optical coherence imaging is a full-frame variant of coherence-domain imaging. An optoelectronic semiconductor holographic film functions as a coherence filter placed before a conventional digital video camera that passes coherent (structure-bearing) light to the camera during holographic readout while preferentially rejecting scattered light. The data are acquired as a succession of en face images at increasing depth inside the sample in a fly-through acquisition. The samples of living tissue were rat osteogenic sarcoma multicellular tumor spheroids that were grown from a single osteoblast cell line in a bioreactor. Tumor spheroids are nearly spherical and have radial symmetry, presenting a simple geometry for analysis. The tumors investigated ranged in diameter from several hundred micrometers to over 1 mm. Holographic features from the tumors were observed in reflection to depths of 500-600 µm with a total tissue path length of approximately 14 mean free paths. The volumetric data from the tumor spheroids reveal heterogeneous structure, presumably caused by necrosis and microcalcifications characteristic of some human avascular tumors.

Temperature effect on the coupling between coherent longitudinal phonons and plasmons in n -type and p -type GaAs

NASA Astrophysics Data System (ADS)

Hu, Jianbo; Zhang, Hang; Sun, Yi; Misochko, Oleg V.; Nakamura, Kazutaka G.

2018-04-01

The coupling between longitudinal optical (LO) phonons and plasmons plays a fundamental role in determining the performance of doped semiconductor devices. In this work, we report a comparative investigation into the dependence of the coupling on temperature and doping in n - and p -type GaAs by using ultrafast coherent phonon spectroscopy. A suppression of coherent oscillations has been observed in p -type GaAs at lower temperature, strikingly different from n -type GaAs and other materials in which coherent oscillations are strongly enhanced by cooling. We attribute this unexpected observation to a cooling-induced elongation of the depth of the depletion layer which effectively increases the screening time of the surface field due to a slow diffusion of photoexcited carriers in p -type GaAs. Such an increase breaks the requirement for the generation of coherent LO phonons and, in turn, LO phonon-plasmon coupled modes because of their delayed formation in time.

Nanometer-scale characterization of laser-driven plasmas, compression, shocks and phase transitions, by coherent small angle x-ray scattering

NASA Astrophysics Data System (ADS)

Kluge, Thomas

2015-11-01

Combining ultra-intense short-pulse and high-energy long-pulse lasers, with brilliant coherent hard X-ray FELs, such as the Helmholtz International Beamline for Extreme Fields (HIBEF) under construction at the HED Instrument of European XFEL, or MEC at LCLS, holds the promise to revolutionize our understanding of many High Energy Density Physics phenomena. Examples include the relativistic electron generation, transport, and bulk plasma response, and ionization dynamics and heating in relativistic laser-matter interactions, or the dynamics of laser-driven shocks, quasi-isentropic compression, and the kinetics of phase transitions at high pressure. A particularly promising new technique is the use of coherent X-ray diffraction to characterize electron density correlations, and by resonant scattering to characterize the distribution of specific charge-state ions, either on the ultrafast time scale of the laser interaction, or associated with hydrodynamic motion. As well one can image slight density changes arising from phase transitions inside of shock-compressed high pressure matter. The feasibility of coherent diffraction techniques in laser-driven matter will be discussed. including recent results from demonstration experiments at MEC. Among other things, very sharp density changes from laser-driven compression are observed, having an effective step width of 10 nm or smaller. This compares to a resolution of several hundred nm achievedpreviously with phase contrast imaging. and on behalf of HIBEF User Consortium, for the Helmholtz International Beamline for Extreme Fields at the European XFEL.

Coherent transfer of orbital angular momentum to excitons by optical four-wave mixing.

PubMed

Ueno, Y; Toda, Y; Adachi, S; Morita, R; Tawara, T

2009-10-26

We demonstrate the coherent transfer of optical orbital angular momentum (OAM) to the center of mass momentum of excitons in semiconductor GaN using a four-wave mixing (FWM) process. When we apply the optical vortex (OV) as an excitation pulse, the diffracted FWM signal exhibits phase singularities that satisfy the OAM conservation law, which remain clear within the exciton dephasing time (approximately 1ps). We also demonstrate the arbitrary control of the topological charge in the output signal by changing the OAM of the input pulse. The results provide a way of controlling the optical OAM through carriers in solids. Moreover, the time evolution of the FWM with OAM leads to the study of the closed-loop carrier coherence in materials.

Signatures of Förster and Dexter transfer processes in coupled nanostructures for linear and two-dimensional coherent optical spectroscopy

NASA Astrophysics Data System (ADS)

Specht, Judith F.; Richter, Marten

2015-03-01

In this manuscript, we study the impact of the two Coulomb induced resonance energy transfer processes, Förster and Dexter coupling, on the spectral signatures obtained by double quantum coherence spectroscopy. We show that the specific coupling characteristics allow us to identify the underlying excitation transfer mechanism by means of specific signatures in coherent spectroscopy. Therefore, we control the microscopic calculated coupling strength of spin preserving and spin flipping Förster transfer processes by varying the mutual orientation of the two quantum emitters. The calculated spectra reveal the optical selection rules altered by Förster and Dexter coupling between two semiconductor quantum dots. We show that Dexter coupling between bright and dark two-exciton states occurs.

Boron doping a semiconductor particle

DOEpatents

Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

1998-06-09

A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

Boron doping a semiconductor particle

DOEpatents

Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

1998-06-09

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Quantum Information Processing with Large Nuclear Spins in GaAs Semiconductors

NASA Astrophysics Data System (ADS)

Leuenberger, Michael N.; Loss, Daniel; Poggio, M.; Awschalom, D. D.

2002-10-01

We propose an implementation for quantum information processing based on coherent manipulations of nuclear spins I=3/2 in GaAs semiconductors. We describe theoretically an NMR method which involves multiphoton transitions and which exploits the nonequidistance of nuclear spin levels due to quadrupolar splittings. Starting from known spin anisotropies we derive effective Hamiltonians in a generalized rotating frame, valid for arbitrary I, which allow us to describe the nonperturbative time evolution of spin states generated by magnetic rf fields. We identify an experimentally observable regime for multiphoton Rabi oscillations. In the nonlinear regime, we find Berry phase interference.

Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy.

PubMed

Ohya, Shinobu; Muneta, Iriya; Hai, Pham Nam; Tanaka, Masaaki

2010-04-23

The valence-band structure and the Fermi level (E(F)) position of ferromagnetic-semiconductor GaMnAs are quantitatively investigated by electrically detecting the resonant tunneling levels of a GaMnAs quantum well (QW) in double-barrier heterostructures. The resonant level from the heavy-hole first state is clearly observed in the metallic GaMnAs QW, indicating that holes have a high coherency and that E(F) exists in the band gap. Clear enhancement of tunnel magnetoresistance induced by resonant tunneling is demonstrated in these double-barrier heterostructures.

Theoretical Investigation of Optical Detection and Recognition of Single Biological Molecules Using Coherent Dynamics of Exciton-Plasmon Coupling

PubMed Central

Sadeghi, S. M.; Hood, B.; Patty, K. D.; Mao, C.-B.

2013-01-01

We use quantum coherence in a system consisting of one metallic nanorod and one semi-conductor quantum dot to investigate a plasmonic nanosensor capable of digital optical detection and recognition of single biological molecules. In such a sensor the adsorption of a specific molecule to the nanorod turns off the emission of the system when it interacts with an optical pulse having a certain intensity and temporal width. The proposed quantum sensors can count the number of molecules of the same type or differentiate between molecule types with digital optical signals that can be measured with high certainty. We show that these sensors are based on the ultrafast upheaval of coherent dynamics of the system and the removal of coherent blockage of energy transfer from the quantum dot to the nanorod once the adsorption process has occurred. PMID:24040424

Ultrafast switching of valence and generation of coherent acoustic phonons in semiconducting rare-earth monosulfides

NASA Astrophysics Data System (ADS)

Punpongjareorn, Napat; He, Xing; Tang, Zhongjia; Guloy, Arnold M.; Yang, Ding-Shyue

2017-08-01

We report on the ultrafast carrier dynamics and generation of coherent acoustic phonons in YbS, a semiconducting rare-earth monochalcogenide, using two-color pump-probe reflectivity. Compared to the carrier relaxation processes and lifetimes of conventional semiconductors, recombination of photoexcited electrons with holes in localized f orbitals is found to take place rapidly with a density-independent time constant of <500 fs in YbS. Such carrier annihilation signifies the unique and ultrafast nature of valence restoration of ytterbium ions after femtosecond photoexcitation switching. Following transfer of the absorbed energy to the lattice, coherent acoustic phonons emerge on the picosecond timescale as a result of the thermal strain in the photoexcited region. By analyzing the electronic and structural dynamics, we obtain the physical properties of YbS including its two-photon absorption and thermooptic coefficients, the period and decay time of the coherent oscillation, and the sound velocity.

Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides

DOE PAGES

Selig, Malte; Berghäuser, Gunnar; Raja, Archana; ...

2016-11-07

Atomically thin transition metal dichalcogenides are direct-gap semiconductors with strong light–matter and Coulomb interactions. The latter accounts for tightly bound excitons, which dominate their optical properties. Besides the optically accessible bright excitons, these systems exhibit a variety of dark excitonic states. They are not visible in the optical spectra, but can strongly influence the coherence lifetime and the linewidth of the emission from bright exciton states. We investigate the microscopic origin of the excitonic coherence lifetime in two representative materials (WS 2 and MoSe 2) through a study combining microscopic theory with spectroscopic measurements. We also show that the excitonicmore » coherence lifetime is determined by phonon-induced intravalley scattering and intervalley scattering into dark excitonic states. Particularly, we identify exciton relaxation processes involving phonon emission into lower-lying dark states that are operative at all temperatures, in WS 2.« less

A Study of Electron and Phonon Dynamics by Broadband Two-Dimensional THz Time-Domain Spectroscopy

NASA Astrophysics Data System (ADS)

Fu, Zhengping

Terahertz (THz) wave interacts with semiconductors in many ways, such as resonant excitation of lattice vibration, intraband transition and polaron formation. Different from the optical waves, THz wave has lower photon energy (1 THz = 4.14 meV) and is suitable for studying dynamics of low-energy excitations. Recently the studies of the interaction of THz wave and semiconductors have been extending from the linear regime to the nonlinear regime, owing to the advance of the high-intensity THz generation and detection methods. Two-dimensional (2D) spectroscopy, as a useful tool to unravel the nonlinearity of materials, has been well developed in nuclear magnetic resonance and infrared region. However, the counterpart in THz region has not been well developed and was only demonstrated at frequency around 20 THz due to the lack of intense broadband THz sources. Using laser-induced plasma as the THz source, we developed collinear broadband 2D THz time-domain spectroscopy covering from 0.5 THz to 20 THz. Broadband intense THz pulses emitted from laser-induced plasma provide access to a variety of nonlinear properties of materials. Ultrafast optical and THz pulses make it possible to resolve the transient change of the material properties with temporal resolution of tens of femtoseconds. This thesis focuses on the linear and nonlinear interaction of the THz wave with semiconductors. Since a great many physical processes, including vibrational motion of lattice and plasma oscillation, has resonant frequency in the THz range, rich physics can be studies in our experiment. The thesis starts from the linear interaction of the THz wave with semiconductors. In the narrow band gap semiconductor InSb, the plasma absorption edge, Restrahlen band and dispersion of polaritons are observed. The nonlinear response of InSb in high THz field is verified in the frequency-resolved THz Z-scan experiment. The third harmonic generations due to the anharmonicity of plasma oscillation and the second order signal due to the plasma-phonon interaction are observed in 2D THz transmission spectra. In this thesis, the coherent phonons excited by THz pulses are experimentally demonstrated for the first time in both GaAs and InSb. The resonant excitation using THz pulses enables the coherent control of the lattice motion via direct interaction of atoms and electromagnetic wave, without inducing electronic transition as reported in the optical excitation of coherent phonons. The classic model is used to explain both excitation and detection mechanisms. An increase of the damping rate of the coherent lattice motion due to higher carrier density is observed in our experiment. Transient reflectivity change of GaAs induced by THz pulses is studied in 2D THz-pump/optical-probe configuration. Using the perturbative analysis of nonlinear electrooptic effect, we conclude that the nonlinear response of GaAs to two phase-locked THz pulses is mainly caused by the nonlinearity of the electronic response.

Integrated InAs/InP quantum-dot coherence comb lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lu, Zhenguo; Liu, Jiaren; Poole, Philip J.; Song, Chun-Ying; Webber, John; Mao, Linda; Chang, Shoude; Ding, Heping; Barrios, Pedro J.; Poitras, Daniel; Janz, Siegfried

2017-02-01

Current communication networks needs to keep up with the exponential growth of today's internet traffic, and telecommunications industry is looking for radically new integrated photonics components for new generation optical networks. We at National Research Council (NRC) Canada have successfully developed nanostructure InAs/InP quantum dot (QD) coherence comb lasers (CCLs) around 1.55 μm. Unlike uniform semiconductor layers in most telecommunication lasers, in these QD CCLs light is emitted and amplified by millions of semiconductor QDs less than 60 nm in diameter. Each QD acts like an isolated light source acting independently of its neighbours, and each QD emits light at its own unique wavelength. The end result is a QD CCL is more stable and has ultra-low timing jitter. But most importantly, a single QD CCL can simultaneously produce 50 or more separate laser beams at distinct wavelengths over the telecommunications C-band. Utilizing those unique properties we have put considerable effort well to design, grow and fabricate InAs/InP QD gain materials. After our integrated packaging and using electrical feedback-loop control systems, we have successfully demonstrated ultra-low intensity and phase noise, frequency-stabilized integrated QD CCLs with the repetition rates from 10 GHz to 100 GHz and the total output power up to 60 mW at room temperature. We have investigated their relative intensity noises, phase noises, RF beating signals and other performance of both filtered individual channel and the whole CCLs. Those highly phase-coherence comb lasers are the promising candidates for flexible bandwidth terabit coherent optical networks and signal processing applications.

Coherent noise reduction in digital holographic microscopy by averaging multiple holograms recorded with a multimode laser.

PubMed

Pan, Feng; Yang, Lizhi; Xiao, Wen

2017-09-04

In digital holographic microscopy (DHM), it is undesirable to observe coherent noise in the reconstructed images. The sources of the noise are mainly the parasitic interference fringes caused by multiple reflections and the speckle pattern caused by the optical scattering on the object surface. Here we propose a noise reduction approach in DHM by averaging multiple holograms recorded with a multimode laser. Based on the periodicity of the temporal coherence of a multimode semiconductor laser, we acquire a series of holograms by changing the optical path length difference between the reference beam and object beam. Because of the use of low coherence light, we can remove the parasitic interference fringes caused by multiple reflections in the holograms. In addition, the coherent noise patterns change in this process due to the different optical paths. Therefore, the coherent noise can be reduced by averaging the multiple reconstructions with uncorrelated noise patterns. Several experiments have been carried out to validate the effectiveness of the proposed approach for coherent noise reduction in DHM. It is shown a remarkable improvement both in amplitude imaging quality and phase measurement accuracy.

Simplified Modeling of Steady-State and Transient Brillouin Gain in Magnetoactive Non-Centrosymmetric Semiconductors

NASA Astrophysics Data System (ADS)

Singh, M.; Aghamkar, P.; Sen, P. K.

With the aid of a hydrodynamic model of semiconductor-plasmas, a detailed analytical investigation is made to study both the steady-state and the transient Brillouin gain in magnetized non-centrosymmetric III-V semiconductors arising from the nonlinear interaction of an intense pump beam with the internally-generated acoustic wave, due to piezoelectric and electrostrictive properties of the crystal. Using the fact that the origin of coherent Brillouin scattering (CBS) lies in the third-order (Brillouin) susceptibility of the medium, we obtained an expression of the gain coefficient of backward Stokes mode in steady-state and transient regimes and studied the dependence of piezoelectricity, magnetic field and pump pulse duration on its growth rate. The threshold-pump intensity and optimum pulse duration for the onset of transient CBS are estimated. The piezoelectricity and externally-applied magnetic field substantially enhances the transient CBS gain coefficient in III-V semiconductors which can be of great use in the compression of scattered pulses.

Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

PubMed Central

Averyanov, Dmitry V.; Karateeva, Christina G.; Karateev, Igor A.; Tokmachev, Andrey M.; Vasiliev, Alexander L.; Zolotarev, Sergey I.; Likhachev, Igor A.; Storchak, Vyacheslav G.

2016-01-01

Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics. PMID:26957146

Optical Properties of A GaInNAs Multi-Quantum Well Semiconductor

NASA Astrophysics Data System (ADS)

Hughes, Timothy S.; Ren, Shang-Fen; Jiang, De-Sheng; Xiaogan, Liang

2002-03-01

Optoelectronic devices used today depend on lasers that have wavelengths in the optical fiber transmission window of 1.3 to 1.55 micrometers. When using GaAs substrate semiconductor lasers, we typically see this range of light emission. Quaternary materials, such as GaInNAs grown on this substrate, not only allow us to control the output wavelength, but it also allows us to manipulate the lattice constant. Further research has potential to produce low-costing highly efficient Vertical Cavity Surface Emitting Lasers (VCSEL). Using a Fourier-Transform Spectrometer, a method of using a Michelson Interferometer to measure the interference between two coherent beams, we measured and analyzed the photoluminescence spectra of a GaInNAs multi-quantum well semiconductor, grown using the Molecular Beam Epitaxy (MBE) growth technique. The experiments of this research were carried out in an undergraduate international research experience at the Chinese Semiconductor Institute supported by the Division of International Programs of NSF.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Youngduck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Kim, Hyungsik; Nemilentsau, Andrei M.; Low, Tony; Taniguchi, Takashi; Watanabe, Kenji; Bae, Myung-Ho; Heinz, Tony F.; Englund, Dirk R.; Hone, James

2017-02-01

Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.

Dynamics of a coherently driven micromaser by the Monte Carlo wavefunction approach

NASA Astrophysics Data System (ADS)

Bonacina, L.; Casagrande, F.; Lulli, A.

2000-08-01

Using a Monte Carlo wavefunction approach we investigate the dynamics of a micromaser driven by a resonant coherent field. At steady state, for increasing interaction times, the system exhibits driven Rabi oscillations, followed by collapse as the range of micromaser trapping states is approached. The system operates in regimes ranging from a strong to a weak amplifier. In the strong-amplifier regime the cavity mode shows a preferred phase and can exhibit quadrature squeezing and sub-Poissonian photon statistics. In the weak-amplifier regime the cavity mode has no preferred phase, is super-Poissonian and is influenced by trapping effects; no revival of Rabi oscillations occurs. The main predictions can be compared with experimental measurements on the populations of atoms leaving the cavity.

Frequency offset locking of AlGaAs semiconductor lasers

NASA Astrophysics Data System (ADS)

Kuboki, Katsuhiko; Ohtsu, Motoichi

1987-04-01

Frequency offset locking is proposed as a technique for tracking and sweeping of a semiconductor laser frequency to improve temporal coherence in semiconductor lasers. Experiments were carried out in which a frequency stabilized laser (of residual frequency fluctuation value of 140 Hz at the integration time between 100 ms and 100 s) was used as a master laser, using a digital phase comparator of a large dynamic range (2 pi x 10 to the 11th rad) in the feedback loop to reduce the phase fluctuations of the beat signal between the master laser and the slave laser. As a result, residual frequency fluctuations of the beat signal were as low as 11 Hz at the integration time of 100 s (i.e., the residual frequency fluctuations of the slave laser were almost equal to those of the master laser).

Coherent electron{endash}hole correlations in quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joensson, L.; Steiner, M.M.; Wilkins, J.W.

1997-03-01

Using numerical time propagation of the electron{endash}hole wave function, we demonstrate how various coherent correlation effects can be observed by laser excitation of a nanoscale semiconductor quantum dot. The lowest-lying states of an electron{endash}hole pair, when appropriately excited by a laser pulse, give rise to charge oscillations that are manifested by beatings in the optical or intraband polarizations. A GaAs 5{times}25{times}25 nm{sup 3} dot in the effective-mass approximation, including the screened Coulomb interaction between the electron and a heavy or light hole, is simulated. {copyright} {ital 1997 American Institute of Physics.}

High frequency optical communications; Proceedings of the Meeting, Cambridge, MA, Sept. 23, 24, 1986

NASA Astrophysics Data System (ADS)

Ramer, O. Glenn; Sierak, Paul

Topics discussed in this volume include systems and applications, detectors, sources, and coherent communications. Papers are presented on RF fiber optic links for avionics applications, fiber optics and optoelectronics for radar and electronic warfare applications, symmetric coplanar electrodes for high-speed Ti:LiNbO3 devices, and surface wave electrooptic modulator. Attention is given to X-band RF fiber-optic links, fiber-optic links for microwave signal transmission, GaAs monolithic receiver and laser driver for GHz transmission rates, and monolithically integrable high-speed photodetectors. Additional papers are on irregular and chaotic behavior of semiconductor lasers under modulation, high-frequency laser package for microwave optical communications, receiver modeling for coherent light wave communications, and polarization sensors and controllers for coherent optical communication systems.

Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices

NASA Astrophysics Data System (ADS)

Suja, Mohammad; Debnath, Bishwajit; Bashar, Sunayna B.; Su, Longxing; Lake, Roger; Liu, Jianlin

2018-05-01

Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing.

78 FR 5776 - University of Colorado Boulder, et al.; Notice of Consolidated Decision on Applications for Duty...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-01-28

... capabilities of this instrument are expanded spectral reach, x-ray beams with controllable polarization, and... optical antennas, plasmonics in metals and semiconductors (including graphene), photonic crystals, and... the Linac Coherent Light Source II project's ray probe pulses with controllable inter-pulse time delay...

Spectral and Spatial Coherent Emission of Thermal Radiation from Metal-Semiconductor Nanostructures

DTIC Science & Technology

2012-03-01

Coupled Wave Analysis (RCWA) numerical technique and Computer Simulation Technology (CST) electromagnetic modeling software, two structures were...Stephanie Gray, IR-VASE and modeling  Dr. Kevin Gross, FTIR  Mr. Richard Johnston, Cleanroom and Photolithography  Ms. Abbey Juhl, Nanoscribe...Appendix B. Supplemental IR-VASE Measurements and Modeling .............................114 Bibliography

Electrical control of single hole spins in nanowire quantum dots.

PubMed

Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

2013-03-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

NASA Astrophysics Data System (ADS)

Vandersypen, L. M. K.; Bluhm, H.; Clarke, J. S.; Dzurak, A. S.; Ishihara, R.; Morello, A.; Reilly, D. J.; Schreiber, L. R.; Veldhorst, M.

2017-09-01

Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual direct current, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here, we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long-spin coherence times, and the rich options for integration with classical electronics based on the same technology.

2D coherent charge transport in highly ordered conducting polymers doped by solid state diffusion

NASA Astrophysics Data System (ADS)

Kang, Keehoon; Watanabe, Shun; Broch, Katharina; Sepe, Alessandro; Brown, Adam; Nasrallah, Iyad; Nikolka, Mark; Fei, Zhuping; Heeney, Martin; Matsumoto, Daisuke; Marumoto, Kazuhiro; Tanaka, Hisaaki; Kuroda, Shin-Ichi; Sirringhaus, Henning

2016-08-01

Doping is one of the most important methods to control charge carrier concentration in semiconductors. Ideally, the introduction of dopants should not perturb the ordered microstructure of the semiconducting host. In some systems, such as modulation-doped inorganic semiconductors or molecular charge transfer crystals, this can be achieved by spatially separating the dopants from the charge transport pathways. However, in conducting polymers, dopants tend to be randomly distributed within the conjugated polymer, and as a result the transport properties are strongly affected by the resulting structural and electronic disorder. Here, we show that in the highly ordered lamellar microstructure of a regioregular thiophene-based conjugated polymer, a small-molecule p-type dopant can be incorporated by solid state diffusion into the layers of solubilizing side chains without disrupting the conjugated layers. In contrast to more disordered systems, this allows us to observe coherent, free-electron-like charge transport properties, including a nearly ideal Hall effect in a wide temperature range, a positive magnetoconductance due to weak localization and the Pauli paramagnetic spin susceptibility.

Quantum Information Processing with Large Nuclear Spins in GaAs Semiconductors

NASA Astrophysics Data System (ADS)

Leuenberger, Michael N.; Loss, Daniel; Poggio, M.; Awschalom, D. D.

2003-03-01

We propose an implementation for quantum information processing based on coherent manipulations of nuclear spins I=3/2 in GaAs semiconductors. We describe theoretically an NMR method which involves multiphoton transitions and which exploits the nonequidistance of nuclear spin levels due to quadrupolar splittings. Starting from known spin anisotropies we derive effective Hamiltonians in a generalized rotating frame, valid for arbitrary I, which allow us to describe the nonperturbative time evolution of spin states generated by magnetic rf fields. We identify an experimentally observable regime for multiphoton Rabi oscillations. In the nonlinear regime, we find Berry phase interference. Ref: PRL 89, 207601 (2002).

Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

S Kim; M Jang; H Yang

2011-12-31

Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less

Charge regulation at semiconductor-electrolyte interfaces.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Coherent destruction of tunneling in two-level system driven across avoided crossing via photon statistics

PubMed Central

Miao, Qiang; Zheng, Yujun

2016-01-01

In this paper, the nature of the multi-order resonance and coherent destruction of tunneling (CDT) for two-level system driven cross avoided crossing is investigated by employing the emitted photons 〈N〉 and the Mandel’s Q parameter based on the photon counting statistics. An asymmetric feature of CDT is shown in the spectrum of Mandel’s Q parameter. Also, the CDT can be employed to suppress the spontaneous decay and prolong waiting time noticeably. The photon emission pattern is of monotonicity in strong relaxation, and homogeneity in pure dephasing regime, respectively. PMID:27353375

Simultaneous Bistability of a Qubit and Resonator in Circuit Quantum Electrodynamics

NASA Astrophysics Data System (ADS)

Mavrogordatos, Th. K.; Tancredi, G.; Elliott, M.; Peterer, M. J.; Patterson, A.; Rahamim, J.; Leek, P. J.; Ginossar, E.; Szymańska, M. H.

2017-01-01

We explore the joint activated dynamics exhibited by two quantum degrees of freedom: a cavity mode oscillator which is strongly coupled to a superconducting qubit in the strongly coherently driven dispersive regime. Dynamical simulations and complementary measurements show a range of parameters where both the cavity and the qubit exhibit sudden simultaneous switching between two metastable states. This manifests in ensemble averaged amplitudes of both the cavity and qubit exhibiting a partial coherent cancellation. Transmission measurements of driven microwave cavities coupled to transmon qubits show detailed features which agree with the theory in the regime of simultaneous switching.

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Multidimensional Coherent Spectroscopy of GaAs Excitons and Quantum Microcavity Polaritons

NASA Astrophysics Data System (ADS)

Wilmer, Brian L.

Light-matter interactions associated with excitons and exciton related complexes are explored in bulk GaAs and semiconductor microcavities using multidimensional coherent spectroscopy (MDCS). This approach provides rich spectra determining quantum excitation pathways, structural influences on the excitons, and coherence times. Polarization, excitation density, and temperature-dependent MDCS is performed on excitons in strained bulk GaAs layers, probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy of heavy-hole and light-hole valence states, leading to an observed splitting of the associated excitons at low temperature. Increasing the strain increases the magnitude of the heavy-/light- hole exciton peak splitting, induces an asymmetry in the off-diagonal interaction coherences, increases the difference in the heavy- and light- hole exciton homogenous linewidths, and increases the inhomogeneous broadening of both exciton species. All results arise from strain-induced variations in the local electronic environment, which is not uniform along the growth direction of the thin layers. For cross-linear polarized excitation, wherein excitonic signals give way to biexcitonic signals, the high-strain sample shows evidence of bound light-, heavy- and mixed- hole biexcitons. 2DCS maps the anticrossing associated with normal mode splitting in a semiconductor microcavity. For a detuning range near zero, it is observed that there are two diagonal features related to the intra-action of exciton-polariton branches and two off-diagonal features related to coherent interaction between the polaritons. At negative detuning, the line shape properties of the diagonal intra-action features are distinguishable and can be associated with cavity-like and exciton-like modes. A biexcitonic companion feature is observed, shifted from the exciton feature by the biexciton binding energy. Closer to zero detuning, all features are enhanced and the diagonal intra-action features become nearly equal in amplitude and linewidth. At positive detuning the exciton-like and cavity-like characteristics return to the diagonal intra-action features. Off-diagonal interaction features exhibit asymmetry in their amplitudes throughout the detuning range. The amplitudes are strongly modulated as the lower polariton branch crosses the bound biexciton energy determined from negatively detuned spectra.

Scanning the "Fringe" of consciousness: what is felt and what is not felt in intuitions about semantic coherence.

PubMed

Topolinski, Sascha; Strack, Fritz

2009-09-01

In intuitions concerning semantic coherence participants are able to discriminate above chance whether a word triad has a common remote associate (coherent triad) or not (incoherent triad). These intuitions are driven by increased fluency in processing coherent triads compared to incoherent triads, which in turn triggers a brief and short positive affect. The present work investigates which of these internal cues, fluency or positive affect, is the actual cue underlying coherence intuitions. In Experiment 1, participants liked coherent word triads more than incoherent triads, but did not rate them as being more fluent in processing. In Experiment 2, participants could intuitively detect coherence when they misattributed fluency to an external source, but lost this intuitive ability when they misattributed affect. It is concluded that the coherence-induced fluency by itself is not consciously experienced and not used in the coherence intuitions, but the fluency-triggered affective consequences.

Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

PubMed Central

Branny, Artur; Kumar, Santosh; Proux, Raphaël; Gerardot, Brian D

2017-01-01

An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions. PMID:28530219

Improved semi-conductor laser device, operating, at room temperature, with an array of three lasers in the spatially coherent, free running mode

NASA Technical Reports Server (NTRS)

Rutz, E. M.

1975-01-01

The peak pulse power was increased by operating an array of three homostructure Ga As lasers in the laser device. A spatial filter in the laser device selects the spatially coherent, free running, mode. The optical peak power is 5 watts, which is three times the peak power of a single laser in the array. The far-field distribution of the three laser array is a single Gaussian beam of spatial coherence without sidelobes or grating lobes. The length of the optical pulses of spatial coherence was increased to 200 ns by improved heat transfer from the p-n junctions of the lasers to the metal housing of the pulse transformer, and by doubling the core area and increasing the turns of the primary windings of the pulse transformer. The mechanical stability of the laser device was improved and the transition from mechanical alignment to electro-mechanical alignment control, was facilitated.

Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baart, T. A.; Jovanovic, N.; Vandersypen, L. M. K.

2016-07-25

The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here, we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called hot spot, we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in, e.g., silicon based quantum dots.more » This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.« less

Zero-lag synchronization and bubbling in delay-coupled lasers.

PubMed

Tiana-Alsina, J; Hicke, K; Porte, X; Soriano, M C; Torrent, M C; Garcia-Ojalvo, J; Fischer, I

2012-02-01

We show experimentally that two semiconductor lasers mutually coupled via a passive relay fiber loop exhibit chaos synchronization at zero lag, and study how this synchronized regime is lost as the lasers' pump currents are increased. We characterize the synchronization properties of the system with high temporal resolution in two different chaotic regimes, namely, low-frequency fluctuations and coherence collapse, identifying significant differences between them. In particular, a marked decrease in synchronization quality develops as the lasers enter the coherence collapse regime. Our high-resolution measurements allow us to establish that synchronization loss is associated with bubbling events, the frequency of which increases with increasing pump current.

Quantum Coherent Dynamics Enhanced by Synchronization with Nonequilibrium Environments

NASA Astrophysics Data System (ADS)

Ishikawa, Akira; Okada, Ryo; Uchiyama, Kazuharu; Hori, Hirokazu; Kobayashi, Kiyoshi

2018-05-01

We report the discovery of the anomalous enhancement of quantum coherent dynamics (CD) due to a non-Markovian mechanism originating from not thermal-equilibrium phonon baths but nonequilibrium coherent phonons. CD is an elementary process for quantum phenomena in nanosystems, such as excitation transfer (ET) in semiconductor nanostructures and light-harvesting systems. CD occurs in homogeneous nanosystems because system inhomogeneity typically destroys coherence. In real systems, however, nanosystems behave as open systems surrounded by environments such as phonon systems. Typically, CD in inhomogeneous nanosystems is enhanced by the absorption and emission of thermal-equilibrium phonons, and the enhancement is described by the conventional master equation. On the other hand, CD is also enhanced by synchronization between population dynamics in nanosystems and coherent phonons; namely, coherent phonons, which are self-consistently induced by phase matching with Rabi oscillation, are fed back to enhance CD. This anomalous enhancement of CD essentially originates from the nonequilibrium and dynamical non-Markovian nature of coherent phonon environments, and the enhancement is firstly predicted by applying time-dependent projection operators to nonequilibrium and dynamical environments. Moreover, CD is discussed by considering ET from a donor to an acceptor. It is found that the enhancement of ET by synchronization with coherent phonons depends on the competition between the output time from a system to an acceptor and the formation time of coherent phonons. These findings in this study will stimulate the design and manipulation of CD via structured environments from the viewpoint of application to nano-photoelectronic devices.

Coherent control in simple quantum systems

NASA Technical Reports Server (NTRS)

Prants, Sergey V.

1995-01-01

Coherent dynamics of two, three, and four-level quantum systems, simultaneously driven by concurrent laser pulses of arbitrary and different forms, is treated by using a nonperturbative, group-theoretical approach. The respective evolution matrices are calculated in an explicit form. General aspects of controllability of few-level atoms by using laser fields are treated analytically.

Generation of Werner states via collective decay of coherently driven atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Girish S.; Kapale, Kishore T.

2006-02-15

We show deterministic generation of Werner states as a steady state of the collective decay dynamics of a pair of neutral atoms coupled to a leaky cavity and strong coherent drive. We also show how the scheme can be extended to generate a 2N-particle analogue of the bipartite Werner states.

Edge transport and mode structure of a QCM-like fluctuation driven by the Shoelace antenna

NASA Astrophysics Data System (ADS)

Golfinopoulos, T.; LaBombard, B.; Brunner, D.; Terry, J. L.; Baek, S. G.; Ennever, P.; Edlund, E.; Han, W.; Burke, W. M.; Wolfe, S. M.; Irby, J. H.; Hughes, J. W.; Fitzgerald, E. W.; Granetz, R. S.; Greenwald, M. J.; Leccacorvi, R.; Marmar, E. S.; Pierson, S. Z.; Porkolab, M.; Vieira, R. F.; Wukitch, S. J.; The Alcator C-Mod Team

2018-05-01

The Shoelace antenna was built to drive edge fluctuations in the Alcator C-Mod tokamak, matching the wavenumber (k\\perp≈1.5 cm‑1) and frequency (30≲ f ≲ 200 kHz) of the quasi-coherent mode (QCM), which is responsible for regulating transport across the plasma boundary in the steady-state, ELM-free Enhanced D α (EDA) H-mode. Initial experiments in 2012 demonstrated that the antenna drove a resonant response in the edge plasma in steady-state EDA and transient, non-ELMy H-modes, but transport measurements were unavailable. In 2016, the Shoelace antenna was relocated to enable direct measurements of driven transport by a reciprocating Mirror Langmuir Probe, while also making available gas puff imaging and reflectometer data to provide additional radial localization of the driven fluctuation. This new data suggests a  ∼4 mm-wide mode layer centered on or just outside the separatrix. Fluctuations coherent with the antenna produced a radial electron flux with {Γ_e}/{n_e}∼4 m s‑1 in EDA H-mode, smaller than but comparable to the QCM level. But in transient ELM-free H-mode, {Γ_e}/{n_e} was an order of magnitude smaller, and driven fluctuations reduced by a factor of ≳ 3. The driven mode is quantitatively similar to the intrinsic QCM across measured spectral quantities, except that it is more coherent and weaker. This work informs the prospect of achieving control of edge transport by direct coupling to edge modes, as well as the use of such active coupling for diagnostic purposes.

Physical mechanism of coherent acoustic phonons generation and detection in GaAs semiconductor

NASA Astrophysics Data System (ADS)

Babilotte, P.; Morozov, E.; Ruello, P.; Mounier, D.; Edely, M.; Breteau, J.-M.; Bulou, A.; Gusev, V.

2007-12-01

We first describe the picosecond acoustic interferometry study of GaAs with two-colors pump-probe laser pulses. The dependence of the generation process on the pump wavelength and the detection process on the probe wavelength both can cause the shift in the phase of the Brillouin signal. Secondly, in order to distinguish the short high frequency wideband acoustic pulse from low frequency Brillouin contribution, we accomplished experiments with (100)GaAs semiconductor coated by a transparent and photoelastically inactive thin film, serving a delay line for the acoustic pulse. Even with highly penetrating pump light (approx 680nm), short acoustic disturbances of approx 7ps of duration have been registered.

Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

2018-06-01

We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

Carrier-envelope offset frequency stabilization of an ultrafast semiconductor laser

NASA Astrophysics Data System (ADS)

Jornod, Nayara; Gürel, Kutan; Wittwer, Valentin J.; Brochard, Pierre; Hakobyan, Sargis; Schilt, Stéphane; Waldburger, Dominik; Keller, Ursula; Südmeyer, Thomas

2018-02-01

We present the self-referenced stabilization of the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser is a SESAM-modelocked VECSEL emitting at a wavelength of 1034 nm with a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs for the generation of a coherent octavespanning supercontinuum spectrum. A quasi-common-path f-to-2f interferometer enables the detection of the CEO beat with a signal-to-noise ratio of 30 dB sufficient for its frequency stabilization. The CEO frequency is phase-locked to an external reference with a feedback signal applied to the pump current.

Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors.

PubMed

Campbell, Philip M; Tarasov, Alexey; Joiner, Corey A; Ready, William J; Vogel, Eric M

2015-05-26

Tunneling transistors with negative differential resistance have widespread appeal for both digital and analog electronics. However, most attempts to demonstrate resonant tunneling devices, including graphene-insulator-graphene structures, have resulted in low peak-to-valley ratios, limiting their application. We theoretically demonstrate that vertical heterostructures consisting of two identical monolayer 2D transition-metal dichalcogenide semiconductor electrodes and a hexagonal boron nitride barrier result in a peak-to-valley ratio several orders of magnitude higher than the best that can be achieved using graphene electrodes. The peak-to-valley ratio is large even at coherence lengths on the order of a few nanometers, making these devices appealing for nanoscale electronics.

Ultradispersive adaptive prism based on a coherently prepared atomic medium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sautenkov, Vladimir A.; P. N. Lebedev Institute of Physics, Moscow 119991; Li Hebin

2010-06-15

We have experimentally demonstrated an ultra-dispersive optical prism made from a coherently driven Rb atomic vapor. The prism possesses spectral angular dispersion that is 6 orders of magnitude higher than that of a prism made of optical glass; such angular dispersion allows one to spatially resolve light beams with different frequencies separated by a few kilohertz. The prism operates near the resonant frequency of atomic vapor and its dispersion is optically controlled by a coherent driving field.

High mobility emissive organic semiconductor

PubMed Central

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Entanglement distribution schemes employing coherent photon-to-spin conversion in semiconductor quantum dot circuits

NASA Astrophysics Data System (ADS)

Gaudreau, Louis; Bogan, Alex; Korkusinski, Marek; Studenikin, Sergei; Austing, D. Guy; Sachrajda, Andrew S.

2017-09-01

Long distance entanglement distribution is an important problem for quantum information technologies to solve. Current optical schemes are known to have fundamental limitations. A coherent photon-to-spin interface built with quantum dots (QDs) in a direct bandgap semiconductor can provide a solution for efficient entanglement distribution. QD circuits offer integrated spin processing for full Bell state measurement (BSM) analysis and spin quantum memory. Crucially the photo-generated spins can be heralded by non-destructive charge detection techniques. We review current schemes to transfer a polarization-encoded state or a time-bin-encoded state of a photon to the state of a spin in a QD. The spin may be that of an electron or that of a hole. We describe adaptations of the original schemes to employ heavy holes which have a number of attractive properties including a g-factor that is tunable to zero for QDs in an appropriately oriented external magnetic field. We also introduce simple throughput scaling models to demonstrate the potential performance advantage of full BSM capability in a QD scheme, even when the quantum memory is imperfect, over optical schemes relying on linear optical elements and ensemble quantum memories.

Experimental characterization of the transition to coherence collapse in a semiconductor laser with optical feedback

NASA Astrophysics Data System (ADS)

Panozzo, M.; Quintero-Quiroz, C.; Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.

2017-11-01

Semiconductor lasers with time-delayed optical feedback display a wide range of dynamical regimes, which have found various practical applications. They also provide excellent testbeds for data analysis tools for characterizing complex signals. Recently, several of us have analyzed experimental intensity time-traces and quantitatively identified the onset of different dynamical regimes, as the laser current increases. Specifically, we identified the onset of low-frequency fluctuations (LFFs), where the laser intensity displays abrupt dropouts, and the onset of coherence collapse (CC), where the intensity fluctuations are highly irregular. Here we map these regimes when both, the laser current and the feedback strength vary. We show that the shape of the distribution of intensity fluctuations (characterized by the standard deviation, the skewness, and the kurtosis) allows to distinguish among noise, LFFs and CC, and to quantitatively determine (in spite of the gradual nature of the transitions) the boundaries of the three regimes. Ordinal analysis of the inter-dropout time intervals consistently identifies the three regimes occurring in the same parameter regions as the analysis of the intensity distribution. Simulations of the well-known time-delayed Lang-Kobayashi model are in good qualitative agreement with the observations.

Developments in optical modeling methods for metrology

NASA Astrophysics Data System (ADS)

Davidson, Mark P.

1999-06-01

Despite the fact that in recent years the scanning electron microscope has come to dominate the linewidth measurement application for wafer manufacturing, there are still many applications for optical metrology and alignment. These include mask metrology, stepper alignment, and overlay metrology. Most advanced non-optical lithographic technologies are also considering using topics for alignment. In addition, there have been a number of in-situ technologies proposed which use optical measurements to control one aspect or another of the semiconductor process. So optics is definitely not dying out in the semiconductor industry. In this paper a description of recent advances in optical metrology and alignment modeling is presented. The theory of high numerical aperture image simulation for partially coherent illumination is discussed. The implications of telecentric optics on the image simulation is also presented. Reciprocity tests are proposed as an important measure of numerical accuracy. Diffraction efficiencies for chrome gratings on reticles are one good way to test Kirchoff's approximation as compared to rigorous calculations. We find significant differences between the predictions of Kirchoff's approximation and rigorous methods. The methods for simulating brightfield, confocal, and coherence probe microscope imags are outlined, as are methods for describing aberrations such as coma, spherical aberration, and illumination aperture decentering.

Tracking the coherent generation of polaron pairs in conjugated polymers

NASA Astrophysics Data System (ADS)

de Sio, Antonietta; Troiani, Filippo; Maiuri, Margherita; Réhault, Julien; Sommer, Ephraim; Lim, James; Huelga, Susana F.; Plenio, Martin B.; Rozzi, Carlo Andrea; Cerullo, Giulio; Molinari, Elisa; Lienau, Christoph

2016-12-01

The optical excitation of organic semiconductors not only generates charge-neutral electron-hole pairs (excitons), but also charge-separated polaron pairs with high yield. The microscopic mechanisms underlying this charge separation have been debated for many years. Here we use ultrafast two-dimensional electronic spectroscopy to study the dynamics of polaron pair formation in a prototypical polymer thin film on a sub-20-fs time scale. We observe multi-period peak oscillations persisting for up to about 1 ps as distinct signatures of vibronic quantum coherence at room temperature. The measured two-dimensional spectra show pronounced peak splittings revealing that the elementary optical excitations of this polymer are hybridized exciton-polaron-pairs, strongly coupled to a dominant underdamped vibrational mode. Coherent vibronic coupling induces ultrafast polaron pair formation, accelerates the charge separation dynamics and makes it insensitive to disorder. These findings open up new perspectives for tailoring light-to-current conversion in organic materials.

DLP technolgy: applications in optical networking

NASA Astrophysics Data System (ADS)

Yoder, Lars A.; Duncan, Walter M.; Koontz, Elisabeth M.; So, John; Bartlett, Terry A.; Lee, Benjamin L.; Sawyers, Bryce D.; Powell, Donald; Rancuret, Paul

2001-11-01

For the past five years, Digital Light Processing (DLP) technology from Texas Instruments has made significant inroads in the projection display market. With products encompassing the world's smallest data & video projectors, HDTVs, and digital cinema, DLP is an extremely flexible technology. At the heart of these display solutions is Texas Instruments Digital Micromirror Device (DMD), a semiconductor-based light switch array of thousands of individually addressable, tiltable, mirror-pixels. With success of the DMD as a spatial light modulator in the visible regime, the use of DLP technology under the constraints of coherent, infrared light for optical networking applications is being explored. As a coherent light modulator, the DMD device can be used in Dense Wavelength Division Multiplexed (DWDM) optical networks to dynamically manipulate and shape optical signals. This paper will present the fundamentals of using DLP with coherent wavefronts, discuss inherent advantages of the technology, and present several applications for DLP in dynamic optical networks.

Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics

NASA Astrophysics Data System (ADS)

Lejman, Mariusz; Vaudel, Gwenaelle; Infante, Ingrid C.; Chaban, Ievgeniia; Pezeril, Thomas; Edely, Mathieu; Nataf, Guillaume F.; Guennou, Mael; Kreisel, Jens; Gusev, Vitalyi E.; Dkhil, Brahim; Ruello, Pascal

2016-08-01

The ability to generate efficient giga-terahertz coherent acoustic phonons with femtosecond laser makes acousto-optics a promising candidate for ultrafast light processing, which faces electronic device limits intrinsic to complementary metal oxide semiconductor technology. Modern acousto-optic devices, including optical mode conversion process between ordinary and extraordinary light waves (and vice versa), remain limited to the megahertz range. Here, using coherent acoustic waves generated at tens of gigahertz frequency by a femtosecond laser pulse, we reveal the mode conversion process and show its efficiency in ferroelectric materials such as BiFeO3 and LiNbO3. Further to the experimental evidence, we provide a complete theoretical support to this all-optical ultrafast mechanism mediated by acousto-optic interaction. By allowing the manipulation of light polarization with gigahertz coherent acoustic phonons, our results provide a novel route for the development of next-generation photonic-based devices and highlight new capabilities in using ferroelectrics in modern photonics.

Spatiotemporal Patterns of Noise-Driven Confined Actin Waves in Living Cells.

PubMed

Bernitt, Erik; Döbereiner, Hans-Günther

2017-01-27

Cells utilize waves of polymerizing actin to reshape their morphologies, which is central to physiological and pathological processes alike. Here, we force dorsal actin waves to propagate on one-dimensional domains with periodic boundary conditions, which results in striking spatiotemporal patterns with a clear signature of noise-driven dynamics. We show that these patterns can be very closely reproduced with a noise-driven active medium at coherence resonance.

Experimental verification of isotropic radiation from a coherent dipole source via electric-field-driven LC resonator metamaterials.

PubMed

Tichit, Paul-Henri; Burokur, Shah Nawaz; Qiu, Cheng-Wei; de Lustrac, André

2013-09-27

It has long been conjectured that isotropic radiation by a simple coherent source is impossible due to changes in polarization. Though hypothetical, the isotropic source is usually taken as the reference for determining a radiator's gain and directivity. Here, we demonstrate both theoretically and experimentally that an isotropic radiator can be made of a simple and finite source surrounded by electric-field-driven LC resonator metamaterials designed by space manipulation. As a proof-of-concept demonstration, we show the first isotropic source with omnidirectional radiation from a dipole source (applicable to all distributed sources), which can open up several possibilities in axion electrodynamics, optical illusion, novel transformation-optic devices, wireless communication, and antenna engineering. Owing to the electric- field-driven LC resonator realization scheme, this principle can be readily applied to higher frequency regimes where magnetism is usually not present.

Enhancing Hole Mobility in III-V Semiconductors

DTIC Science & Technology

2012-05-21

acteristics of the digital superlattice (n¼1,0, andþ 1) that was used in the metamorphic buffer. The GaSb channel peak gets buried in the n¼ 0...materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other...hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as germanium. In this paper, we explore the use

Optical manipulation of valley pseduospin in 2D semiconductors

NASA Astrophysics Data System (ADS)

Ye, Ziliang

Valley polarization associated with the occupancy in the energy degenerate but quantum mechanically distinct valleys in the momentum space closely resembles spin polarization and has been proposed as a pseudospin carrier for future quantum information technologies. Monolayers of transition metal dichalcogenide (TMDC) crystals, with broken inversion symmetry and large spin-orbital coupling, support robust valley polarization and therefore provide an important platform for studying valley-dependent physics. Besides optical excitation and photoluminescence detection, valley polarization has been electrically measured through the valley Hall effect and created through spin injection from ferromagnetic semiconductor contacts. Moreover, the energy degeneracy of the valley degree of freedom has been lifted by the optical Stark effect. Recently, we have demonstrated optical manipulation of valley coherence, i.e., of the valley pseudospin, by the optical Stark effect in monolayer WSe2. Using below-bandgap circularly polarized light, we rotated the valley pseudospin on the femtosecond time scale. Both the direction and speed of the rotation can be optically controlled by tuning the dynamic phase of excitons in opposite valleys. The pseudospin rotation was identified by changes in the polarization of the photoluminescence. In addition, by varying the time delay between the excitation and control pulses, we directly probed the lifetime of the intervalley coherence. Similar rotation levels have also been observed in static magneto-optic experiments. Our work presents an important step towards the full control of the valley degree of freedom in 2D semiconductors. The work was done in collaboration with Dr. Dezheng Sun and Prof. Tony F. Heinz.

Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

PubMed Central

Lee, Sooheyong; Williams, G. Jackson; Campana, Maria I.; Walko, Donald A.; Landahl, Eric C.

2016-01-01

Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acoustic oscillations at frequencies of several GHz. PMID:26751616

Solubility- and temperature-driven thin film structures of polymeric thiophene derivatives for high performance OFET applications

NASA Astrophysics Data System (ADS)

LeFevre, Scott W.; Bao, Zhenan; Ryu, Chang Y.; Siegel, Richard W.; Yang, Hoichang

2007-09-01

It has been shown that high charge mobility in solution-processible organic semiconductor-based field effect transistors is due in part to a highly parallel π-π stacking plane orientation of the semiconductors with respect to gate-dielectric. Fast solvent evaporation methods, generally, exacerbate kinetically random crystal orientations in the films deposited, specifically, from good solvents. We have investigated solubility-driven thin film structures of thiophene derivative polymers via spin- and drop-casting with volatile solvents of a low boiling point. Among volatile solvents examined, marginal solvents, which have temperature-dependent solubility for the semiconductors (e.g. methylene chloride for regioregular poly(3-alkylthiophene)s), can be used to direct the favorable crystal orientation regardless of solvent drying time, when the temperature of gate-dielectrics is held to relatively cooler than the warm solution. Grazing-incidence X-ray diffraction and atomic force microscopy strongly support that significant control of crystal orientation and mesoscale morphology using a "cold" substrate holds true for both drop and spin casting. The effects of physiochemical post-modificaiton on film crystal structures and morphologies of poly(9,9-dioctylfluorene-co-bithiophene) have also been investigated.

Design of Ceramic Springs for Use in Semiconductor Crystal Growth in Microgravity

NASA Technical Reports Server (NTRS)

Kaforey, M. F.; Deeb, C. W.; Matthiesen, D. H.

1999-01-01

Segregation studies can be done in microgravity to reduce buoyancy driven convection and investigate diffusion-controlled growth during the growth of semiconductor crystals. During these experiments, it is necessary to prevent free surface formation in order to avoid surface tension driven convection (Marangoni convection). Semiconductor materials such as gallium arsenide and germanium shrink upon melting, so a spring is necessary to reduce the volume of the growth chamber and prevent the formation of a free surface when the sample melts. A spring used in this application must be able to withstand both the high temperature and the processing atmosphere. During the growth of gallium arsenide crystals during the GTE Labs/USAF/NASA GaAs GAS Program and during the CWRU GaAs programs aboard the First and Second United States microgravity Laboratories, springs made of pyrolytic boron nitride (PBN) leaves were used. The mechanical properties of these PBN springs have been investigated and springs having spring constants ranging from 0.25 N/mm to 25 N/mm were measured. With this improved understanding comes the ability to design springs for more general applications, and guidelines are given for optimizing the design of PBN springs for crystal growth applications.

High-dimensional atom localization via spontaneously generated coherence in a microwave-driven atomic system.

PubMed

Wang, Zhiping; Chen, Jinyu; Yu, Benli

2017-02-20

We investigate the two-dimensional (2D) and three-dimensional (3D) atom localization behaviors via spontaneously generated coherence in a microwave-driven four-level atomic system. Owing to the space-dependent atom-field interaction, it is found that the detecting probability and precision of 2D and 3D atom localization behaviors can be significantly improved via adjusting the system parameters, the phase, amplitude, and initial population distribution. Interestingly, the atom can be localized in volumes that are substantially smaller than a cubic optical wavelength. Our scheme opens a promising way to achieve high-precision and high-efficiency atom localization, which provides some potential applications in high-dimensional atom nanolithography.

Inverse energy cascade and emergence of large coherent vortices in turbulence driven by Faraday waves.

PubMed

Francois, N; Xia, H; Punzmann, H; Shats, M

2013-05-10

We report the generation of large coherent vortices via inverse energy cascade in Faraday wave driven turbulence. The motion of floaters in the Faraday waves is three dimensional, but its horizontal velocity fluctuations show unexpected similarity with two-dimensional turbulence. The inverse cascade is detected by measuring frequency spectra of the Lagrangian velocity, and it is confirmed by computing the third moment of the horizontal velocity fluctuations. This is observed in deep water in a broad range of wavelengths and vertical accelerations. The results broaden the scope of recent findings on Faraday waves in thin layers [A. von Kameke et al., Phys. Rev. Lett. 107, 074502 (2011)].

Band structure engineering of semiconductors for enhanced photoelectrochemical water splitting: The case of TiO2

NASA Astrophysics Data System (ADS)

Yin, Wan-Jian; Tang, Houwen; Wei, Su-Huai; Al-Jassim, Mowafak M.; Turner, John; Yan, Yanfa

2010-07-01

Here, we propose general strategies for the rational design of semiconductors to simultaneously meet all of the requirements for a high-efficiency, solar-driven photoelectrochemical (PEC) water-splitting device. As a case study, we apply our strategies for engineering the popular semiconductor, anatase TiO2 . Previous attempts to modify known semiconductors such as TiO2 have often focused on a particular individual criterion such as band gap, neglecting the possible detrimental consequence to other important criteria. Density-functional theory calculations reveal that with appropriate donor-acceptor coincorporation alloys with anatase TiO2 hold great potential to satisfy all of the criteria for a viable PEC device. We predict that (Mo, 2N) and (W, 2N) are the best donor-acceptor combinations in the low-alloy concentration regime whereas (Nb, N) and (Ta, N) are the best choice of donor-acceptor pairs in the high-alloy concentration regime.

Impact of environment on dynamics of exciton complexes in a WS2 monolayer

NASA Astrophysics Data System (ADS)

Jakubczyk, Tomasz; Nogajewski, Karol; Molas, Maciej R.; Bartos, Miroslav; Langbein, Wolfgang; Potemski, Marek; Kasprzak, Jacek

2018-07-01

Scientific curiosity to uncover original optical properties and functionalities of atomically thin semiconductors, stemming from unusual Coulomb interactions in the two-dimensional geometry and multi-valley band structure, drives the research on monolayers of transition metal dichalcogenides (TMDs). While recent works ascertained the exotic energetic schemes of exciton complexes in TMDs, we here infer their unusual coherent dynamics occurring on subpicosecond time scale. The dynamics is largely affected by the disorder landscape on the submicron scale, thus can be uncovered using four-wave mixing in the frequency domain, which enables microscopic investigations and imaging. Focusing on a WS2 monolayer, we observe that exciton coherence is lost primarily due to interaction with phonons and relaxation processes towards optically dark excitonic states. Notably, when temperature is low and disorder weak, excitons large coherence volume results in enhanced oscillator strength, allowing to reach the regime of radiatively limited dephasing. Additionally, we observe long valley coherence for the negatively charged exciton complex. We therefore elucidate the crucial role of exciton environment in the TMDs on its dynamics and show that revealed mechanisms are ubiquitous within this family.

Vacuum-induced coherence in quantum dot systems

NASA Astrophysics Data System (ADS)

Sitek, Anna; Machnikowski, Paweł

2012-11-01

We present a theoretical study of vacuum-induced coherence in a pair of vertically stacked semiconductor quantum dots. The process consists in a coherent excitation transfer from a single-exciton state localized in one dot to a delocalized state in which the exciton occupation gets trapped. We study the influence of the factors characteristic of quantum dot systems (as opposed to natural atoms): energy mismatch, coupling between the single-exciton states localized in different dots, and different and nonparallel dipoles due to sub-band mixing, as well as coupling to phonons. We show that the destructive effect of the energy mismatch can be overcome by an appropriate interplay of the dipole moments and coupling between the dots which allows one to observe the trapping effect even in a structure with technologically realistic energy splitting of the order of milli-electron volts. We also analyze the impact of phonon dynamics on the occupation trapping and show that phonon effects are suppressed in a certain range of system parameters. This analysis shows that the vacuum-induced coherence effect and the associated long-living trapped excitonic population can be achieved in quantum dots.

Evaluating an Expectation-Driven Question-under-Discussion Model of Discourse Interpretation

ERIC Educational Resources Information Center

Kehler, Andrew; Rohde, Hannah

2017-01-01

According to Question-Under-Discussion (QUD) models of discourse interpretation, clauses cohere with the preceding context by virtue of providing answers to (usually implicit) questions that are situated within a speaker's goal-driven strategy of inquiry. In this article we present four experiments that examine the predictions of a QUD model of…

Spin cat state generation for quadrupolar nuclei in semiconductor quantum dots or defect centers

NASA Astrophysics Data System (ADS)

Bulutay, Ceyhun

Implementing spin-based quantum information encoding schemes in semiconductors has a high priority. The so-called cat codes offer a paradigm that enables hardware-efficient error correction. Their inauguration to semiconductor-based nuclear magnetic resonance framework hinges upon the realization of coherent spin states (CSS). In this work, we show how the crucial superpositions of CSS can be generated for the nuclear spins. This is through the intrinsic electric quadrupole interaction involving a critical role by the biaxiality term that is readily available, as in strained heterostructures of semiconductors, or defect centers having nearby quadrupolar spins. The persistence of the cat states is achieved using a rotation pulse so as to harness the underlying fixed points of the classical Hamiltonian. We classify the two distinct types as polar- and equator-bound over the Bloch sphere with respect to principal axes. Their optimal performance as well as sensitivity under numerous parameter deviations are analyzed. Finally, we present how these modulo-2 cat states can be extended to modulo-4 by a three-pulse scheme. This work was supported by TUBITAK, The Scientific and Technological Research Council of Turkey through the project No. 114F409.

Controlling the light propagation in one-dimensional photonic crystal via incoherent pump and interdot tunneling

NASA Astrophysics Data System (ADS)

Abbasabadi, Majid; Sahrai, Mostafa

2018-01-01

We investigated the propagation of an electromagnetic pulse through a one-dimensional photonic crystal doped with quantum-dot (QD) molecules in a defect layer. The QD molecules behave as a three-level quantum system and are driven by a coherent probe laser field and an incoherent pump field. No coherent coupling laser fields were introduced, and the coherence was created by the interdot tunnel effect. Further studied was the effect of tunneling and incoherent pumping on the group velocity of the transmitted and reflected probe pulse.

Technology Development of Miniaturized Far-Infrared Sources for Biomolecular Spectroscopy

NASA Technical Reports Server (NTRS)

Kono, Junichiro

2003-01-01

The objective of this project was to develop a purely solid-state based, thus miniaturized, far-infrared (FIR) (also known as terahertz (THz)) wave source using III-V semiconductor nanostructures for biomolecular detection and sensing. Many biomolecules, such as DNA and proteins, have distinct spectroscopic features in the FIR wavelength range as a result of vibration-rotation-tunneling motions and various inter- and intra-molecule collective motions. Spectroscopic characterization of such molecules requires narrow linewidth, sufficiently high power, tunable (in wavelength), and coherent FIR sources. Unfortunately, the FIR frequency is one of the least technologically developed ranges in the electromagnetic spectrum. Currently available FIR sources based on non-solid state technology are bulky, inefficient, and very often incoherent. In this project we investigated antimonide based compound semiconductor (ABCS) nanostructures as the active medium to generate FIR radiation. The final goal of this project was to demonstrate a semiconductor THz source integrated with a pumping diode laser module to achieve a compact system for biomolecular applications.

QM/QM approach to model energy disorder in amorphous organic semiconductors.

PubMed

Friederich, Pascal; Meded, Velimir; Symalla, Franz; Elstner, Marcus; Wenzel, Wolfgang

2015-02-10

It is an outstanding challenge to model the electronic properties of organic amorphous materials utilized in organic electronics. Computation of the charge carrier mobility is a challenging problem as it requires integration of morphological and electronic degrees of freedom in a coherent methodology and depends strongly on the distribution of polaron energies in the system. Here we represent a QM/QM model to compute the polaron energies combining density functional methods for molecules in the vicinity of the polaron with computationally efficient density functional based tight binding methods in the rest of the environment. For seven widely used amorphous organic semiconductor materials, we show that the calculations are accelerated up to 1 order of magnitude without any loss in accuracy. Considering that the quantum chemical step is the efficiency bottleneck of a workflow to model the carrier mobility, these results are an important step toward accurate and efficient disordered organic semiconductors simulations, a prerequisite for accelerated materials screening and consequent component optimization in the organic electronics industry.

A Study on the Applications of Quantum Optical Coherence to Nano-Optics

NASA Astrophysics Data System (ADS)

Hakami, Jabir Wali

Optically controlled dipole-dipole interaction at submicrometers and subwavelength scales leads to many interesting phenomenon and remarkable potential applications in quantum optics, condensed matter physics, and today's micro-devices. In this dissertation, we study the applications of quantum optical coherence to nano-optics in the following systems and aspects. On the one hand, chiral metamaterials has been previously reported as excellent candidates to realize both attractive and repulsive Casimir forces, where the existence of a repulsive Casimir force depends upon the strength of the chirality. On the other hand, nanoscale integration of metal nanoparticles and semiconductors is particularly interesting because the strengths of both materials are combined in such a hybrid system. In the first part of this work, we proposed a technical scheme to coherently control of the Casimir interaction energy with two identical chirality mediums. We took explicit caution regarding the requirements of passivity and causal response of the materials, since these requirements are essential for the application of the Lifshitz formula. The rare-earth metals' atomic species, for instance, dysprosium, is proposed as an applicable medium for the forthcoming studies of possible experimental implementation of our technique. Secondly, we fully investigated the coherent control of the quantum optical properties of spontaneous emission spectra of a semiconductor quantum dot coupled to a metallic nanoparticle. The properties of the spontaneous emission spectra of such a system are studied in detail with and without involving the coherent field. The Rabi splitting effect in the spectrum emitted by the quantum dot under particular conditions is predicted for different sizes of the metal nanoparticles. We show that the spontaneous emission spectra of the transition coupled to surface plasmons may be further modified by adjusting the external coherent control on the adjacent transitions. In the third part, we propose a robust protocol to study the entanglement generation in a hybrid structure consisting of two quantum dots in the proximity of a metallic nanoshell. The entanglement arises impulsively due to common coupling to the plasmonic nanostructure, without demanding postselective measurement or mediating the dissipative environment. The long-lived entangled states can be created deterministically by optimizing the shell thickness as well as the ratio of the distances between the quantum dots and the surface of the shell. The loss of the system is greatly reduced even when the quantum dots are ultraclose to the shell, which signifies a slow decay rate of the coherence information and longtime entanglement preservation.

Floquet topological polaritons in semiconductor microcavities

NASA Astrophysics Data System (ADS)

Ge, R.; Broer, W.; Liew, T. C. H.

2018-05-01

We propose and model Floquet topological polaritons in semiconductor microcavities, using the interference of frequency-detuned coherent fields to provide a time-periodic potential. For arbitrarily weak field strength, where the Floquet frequency is larger than the relevant bandwidth of the system, a Chern insulator is obtained. As the field strength is increased, a topological phase transition is observed with an unpaired Dirac cone proclaiming the anomalous Floquet topological insulator. As the relevant bandwidth increases even further, an exotic Chern insulator with flatband is observed with unpaired Dirac cone at the second critical point. Considering the polariton spin degree of freedom, we find that the choice of field polarization allows oppositely polarized polaritons to either copropagate or counterpropagate in chiral edge states.

Periodic Landau-Zener problem in long-range migration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oksengendler, B. L.; Turaeva, N. N.

From studies of radiation effects in semiconductors at low temperatures, it is known that an interstitial atom migrates over a distance of up to 1000 A (Watkins effect). The interpretation of this effect is based on the inversion of potential energy curves of an interstitial atom in semiconductors when it changes its charge. At low temperatures, a cascade of radiationless transitions can occur between the ground and excited states of a relocalized electron, which leads to the coherent tunneling of the interstitial atom through the lattice. The description of this effect using the scattering matrix S leads to the dispersionmore » law and to an equation for the effective mass of such a quasiparticle called an inversion.« less

Quasi-phase-matching and second-harmonic generation enhancement in a semiconductor microresonator array using slow-light effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumeige, Yannick

We theoretically analyze the second-harmonic generation process in a sequence of unidirectionnaly coupled doubly resonant whispering gallery mode semiconductor resonators. By using a convenient design, it is possible to coherently sum the second-harmonic fields generated inside each resonator. We show that resonator coupling allows the bandwidth of the phase-matching curve to be increased with respect to single-resonator configurations simultaneously taking advantage of the resonant feature of the resonators. This quasi-phase-matching technique could be applied to obtain small-footprint nonlinear devices with large bandwidth and limited nonlinear losses. The results are discussed in the framework of the slow-light-effect enhancement of second-order opticalmore » nonlinearities.« less

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

NASA Astrophysics Data System (ADS)

Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.

2017-11-01

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

Interference effect in the resonant emission of a semiconductor microcavity

NASA Astrophysics Data System (ADS)

Cassabois, G.; Bogani, F.; Triques, A. L.; Delalande, C.; Roussignol, Ph.

2001-07-01

We present a phenomenological description of the coherent emission from a semiconductor microcavity in the strong-coupling regime. We consider two main contributions which are calculated in the framework of the semiclassical approach of the linear dispersion theory: reflectivity corresponds to the response of a uniform microcavity while resonant Rayleigh scattering (RRS) arises from disorder. Our simulations are compared to experimental results obtained at normal incidence in a backscattering geometry by means of cw spectroscopy and interferometric correlation with subpicosecond resolution. In this geometry, a fair agreement is reached assuming interferences between the two aforementioned contributions. This interference effect gives evidence of the drastic modification of the RRS emission pattern of the embedded quantum well induced by the Fabry-Pérot cavity.

Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

DTIC Science & Technology

2016-09-01

TECHNICAL REPORT 3046 September 2016 GENERATION OF QUALITY PULSES FOR CONTROL OF QUBIT/QUANTUM MEMORY SPIN STATES: EXPERIMENTAL AND SIMULATION...control circuitry for control of electron/ nuclear spin states of qubits/quantum memory applicable to semiconductor, superconductor, ionic, and...coherence time of the qubit/ memory , we present as an example the integration of cryogenic superconductor components, including filters and

Nanoscale Measurements of Magnetism & Spin Coherence in Semiconductors

DTIC Science & Technology

2015-12-17

superconductor created by magnetic defects. These energy-resolved studies are distinct from typical spin-selective measurements performed previously using...MacDonald, B. A. Bernevig, A. Yazdani. Observation of Majorana fermions in ferromagnetic atomic chains on a superconductor , Science, (10 2014): 602... superconductor , Physical Review B, (07 2013): 0. doi: 10.1103/PhysRevB.88.020407 TOTAL: 4 Number of Papers published in peer-reviewed journals

Spin Coherence in Semiconductor Nanostructures

DTIC Science & Technology

2006-12-10

to the collector under the operating conditions of the unipolar spin transistor. This work has appeared in Journal of Applied Physics. (Left...Original proposal of the homojunction unipolar spin transistor, showing the dropping of the barrier for carriers to leak from base to collector ...Right) new proposal of the heterostructure unipolar spin transistor, showing that the barrier for majority carriers to leak from base to collector is

MURI Center for Photonic Quantum Information Systems

DTIC Science & Technology

2009-10-16

conversion; solid- state quantum gates based on quantum dots in semiconductors and on NV centers in diamond; quantum memories using optical storage...of our high-speed quantum cryptography systems, and also by continuing to work on quantum information encoding into transverse spatial modes. 14...make use of cavity QED effects for quantum information processing, the quantum dot needs to be addressed coherently . We have probed the QD-cavity

Coherent nonhelical shear dynamos driven by magnetic fluctuations at low Reynolds numbers

DOE PAGES

Squire, J.; Bhattacharjee, A.

2015-10-28

Nonhelical shear dynamos are studied with a particular focus on the possibility of coherent dynamo action. The primary results—serving as a follow up to the results of Squire & Bhattacharjee—pertain to the "magnetic shear-current effect" as a viable mechanism to drive large-scale magnetic field generation. This effect raises the interesting possibility that the saturated state of the small-scale dynamo could drive large-scale dynamo action, and is likely to be important in the unstratified regions of accretion disk turbulence. In this paper, the effect is studied at low Reynolds numbers, removing the complications of small-scale dynamo excitation and aiding analysis bymore » enabling the use of quasi-linear statistical simulation methods. In addition to the magnetically driven dynamo, new results on the kinematic nonhelical shear dynamo are presented. Furthermore, these illustrate the relationship between coherent and incoherent driving in such dynamos, demonstrating the importance of rotation in determining the relative dominance of each mechanism.« less

COHERENT NONHELICAL SHEAR DYNAMOS DRIVEN BY MAGNETIC FLUCTUATIONS AT LOW REYNOLDS NUMBERS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Squire, J.; Bhattacharjee, A., E-mail: jsquire@caltech.edu

2015-11-01

Nonhelical shear dynamos are studied with a particular focus on the possibility of coherent dynamo action. The primary results—serving as a follow up to the results of Squire and Bhattacharjee—pertain to the “magnetic shear-current effect” as a viable mechanism to drive large-scale magnetic field generation. This effect raises the interesting possibility that the saturated state of the small-scale dynamo could drive large-scale dynamo action, and is likely to be important in the unstratified regions of accretion disk turbulence. In this paper, the effect is studied at low Reynolds numbers, removing the complications of small-scale dynamo excitation and aiding analysis bymore » enabling the use of quasi-linear statistical simulation methods. In addition to the magnetically driven dynamo, new results on the kinematic nonhelical shear dynamo are presented. These illustrate the relationship between coherent and incoherent driving in such dynamos, demonstrating the importance of rotation in determining the relative dominance of each mechanism.« less

Coherent coupling between radio frequency, optical, and acoustic waves in piezo-optomechanical circuits

PubMed Central

Balram, Krishna C.; Davanço, Marcelo I.; Song, Jin Dong; Srinivasan, Kartik

2016-01-01

Optomechanical cavities have been studied for applications ranging from sensing to quantum information science. Here, we develop a platform for nanoscale cavity optomechanical circuits in which optomechanical cavities supporting co-localized 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipulation of the localized mechanical mode either with a radio frequency (RF) field through the piezo-electric effect, which produces acoustic waves that are routed and coupled to the optomechanical cavity by phononic crystal waveguides, or optically through the strong photoelastic effect. Along with mechanical state preparation and sensitive readout, we use this to demonstrate an acoustic wave interference effect, similar to atomic coherent population trapping, in which RF-driven coherent mechanical motion is cancelled by optically-driven motion. Manipulating cavity optomechanical systems with equal facility through both photonic and phononic channels enables new architectures for signal transduction between the optical, electrical, and mechanical domains. PMID:27446234

Electron-ion coupling in semiconductors beyond Fermi's Golden Rule [On the electron-ion coupling in semiconductors beyond Fermi's Golden Rule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Medvedev, Nikita; Li, Zheng; Tkachenko, Victor

2017-01-31

In the present study, a theoretical study of electron-phonon (electron-ion) coupling rates in semiconductors driven out of equilibrium is performed. Transient change of optical coefficients reflects the band gap shrinkage in covalently bonded materials, and thus, the heating of atomic lattice. Utilizing this dependence, we test various models of electron-ion coupling. The simulation technique is based on tight-binding molecular dynamics. Our simulations with the dedicated hybrid approach (XTANT) indicate that the widely used Fermi's golden rule can break down describing material excitation on femtosecond time scales. In contrast, dynamical coupling proposed in this work yields a reasonably good agreement ofmore » simulation results with available experimental data.« less

Electromagnetic pulse-driven spin-dependent currents in semiconductor quantum rings.

PubMed

Zhu, Zhen-Gang; Berakdar, Jamal

2009-04-08

We investigate the non-equilibrium charge and spin-dependent currents in a quantum ring with a Rashba spin-orbit interaction (SOI) driven by two asymmetric picosecond electromagnetic pulses. The equilibrium persistent charge and persistent spin-dependent currents are investigated as well. It is shown that the dynamical charge and the dynamical spin-dependent currents vary smoothly with a static external magnetic flux and the SOI provides a SU(2) effective flux that changes the phases of the dynamic charge and the dynamic spin-dependent currents. The period of the oscillation of the total charge current with the delay time between the pulses is larger in a quantum ring with a larger radius. The parameters of the pulse fields control to a certain extent the total charge and the total spin-dependent currents. The calculations are applicable to nanometre rings fabricated in heterojunctions of III-V and II-VI semiconductors containing several hundreds of electrons.

Directional charge separation in isolated organic semiconductor crystalline nanowires

DOE PAGES

Labastide, J. A.; Thompson, H. B.; Marques, S. R.; ...

2016-02-25

One of the fundamental design paradigms in organic photovoltaic device engineering is based on the idea that charge separation is an extrinsically driven process requiring an interface for exciton fission. This idea has driven an enormous materials science engineering effort focused on construction of domain sizes commensurate with a nominal exciton diffusion length of order 10 nm. Here, we show that polarized optical excitation of isolated pristine crystalline nanowires of a small molecule n-type organic semiconductor, 7,8,15,16-tetraazaterrylene, generates a significant population of charge-separated polaron pairs along the π-stacking direction. Charge separation was signalled by pronounced power-law photoluminescence decay polarized alongmore » the same axis. In the transverse direction, we observed exponential decay associated with excitons localized on individual monomers. We propose that this effect derives from an intrinsic directional charge-transfer interaction that can ultimately be programmed by molecular packing geometry.« less

Construction of vesicle CdSe nano-semiconductors photocatalysts with improved photocatalytic activity: Enhanced photo induced carriers separation efficiency and mechanism insight.

PubMed

Wen, Jiangsu; Ma, Changchang; Huo, Pengwei; Liu, Xinlin; Wei, Maobin; Liu, Yang; Yao, Xin; Ma, Zhongfei; Yan, Yongsheng

2017-10-01

Visible-light-driven photocatalysis as a green technology has attracted a lot of attention due to its potential applications in environmental remediation. Vesicle CdSe nano-semiconductor photocatalyst are successfully prepared by a gas template method and characterized by a variety of methods. The vesicle CdSe nano-semiconductors display enhanced photocatalytic performance for the degradation of tetracycline hydrochloride, the photodegradation rate of 78.824% was achieved by vesicle CdSe, which exhibited an increase of 31.779% compared to granular CdSe. Such an exceptional photocatalytic capability can be attributed to the unique structure of the vesicle CdSe nano-semiconductor with enhanced light absorption ability and excellent carrier transport capability. Meanwhile, the large surface area of the vesicle CdSe nano-semiconductor can increase the contact probability between catalyst and target and provide more surface-active centers. The photocatalytic mechanisms are analyzed by active species quenching. It indicates that h + and O 2 - are the main active species which play a major role in catalyzing environmental toxic pollutants. Simultaneously, the vesicle CdSe nano-semiconductor had high efficiency and stability. Copyright © 2017. Published by Elsevier B.V.

Sensitivity of a phase-sensitive optical time-domain reflectometer with a semiconductor laser source

NASA Astrophysics Data System (ADS)

Alekseev, A. E.; Tezadov, Ya A.; Potapov, V. T.

2018-06-01

In the present paper we perform, for the first time, an analysis of the average sensitivity of a coherent phase-sensitive optical time-domain reflectometer (phase-OTDR) with a semiconductor laser source to external actions. The sensitivity of this OTDR can be defined in a conventional manner via average SNR at its output, which in turn is defined by the average useful signal power and the average intensity noise power in the OTDR spatial channels in the bandwidth defined by the OTDR sampling frequency. The average intensity noise power is considered in detail in a previous paper. In the current paper we examine the average useful signal power at the output of a phase-OTDR. The analysis of the average useful signal power of a phase-OTDR is based on the study of a fiber scattered-light interferometer (FSLI) which is treated as a constituent part of a phase- OTDR. In the analysis, one of the conventional phase-OTDR schemes with a rectangular dual-pulse probe signal is considered. The FSLI which corresponds to this OTDR scheme has two scattering fiber segments with additional time delay, introduced between backscattered fields. The average useful signal power and the resulting average SNR at the output of this FSLI are determined by the degree of coherence of the semiconductor laser source, the length of the scattering fiber segments, and by the additional time delay between the scattering fiber segments. The average useful signal power characteristic of the corresponding phase-OTDR is determined by analogous parameters: the source coherence, the time durations of the parts constituting the dual-pulse, and the time interval which separates these parts. In the paper an expression for the average useful signal power of a phase-OTDR is theoretically derived and experimentally verified. Based on the found average useful signal power of a phase-OTDR and the average intensity noise power, derived in the previous paper, the average SNR of a phase-OTDR is defined. Setting the average signal SNR to 1, at a defined spectral band the minimum detectable external action amplitude for our particular phase-OTDR setup is determined. We also derive a simple relation for the average useful signal power and the average SNR which results when making the assumption that the laser source coherence is high. The results of the paper can serve as the basis for further development of the concept of phase-OTDR sensitivity.

Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction.

PubMed

Winget, Paul; Schirra, Laura K; Cornil, David; Li, Hong; Coropceanu, Veaceslav; Ndione, Paul F; Sigdel, Ajaya K; Ginley, David S; Berry, Joseph J; Shim, Jaewon; Kim, Hyungchui; Kippelen, Bernard; Brédas, Jean-Luc; Monti, Oliver L A

2014-07-16

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Production of solar chemicals: gaining selectivity with hybrid molecule/semiconductor assemblies.

PubMed

Hennessey, Seán; Farràs, Pau

2018-05-29

Research on the production of solar fuels and chemicals has rocketed over the past decade, with a wide variety of systems proposed to harvest solar energy and drive chemical reactions. In this Feature Article we have focused on hybrid molecule/semiconductor assemblies in both powder and supported materials, summarising recent systems and highlighting the enormous possibilities offered by such assemblies to carry out highly demanding chemical reactions with industrial impact. Of relevance is the higher selectivity obtained in visible light-driven organic transformations when using molecular catalysts compared to photocatalytic materials.

Trends in solid state electronics, part 2

NASA Technical Reports Server (NTRS)

Gassaway, J. D.

1972-01-01

Developments in the fields of semiconductors and magnetics are surveyed. Materials, devices, theory, and fabrication technology are discussed. Important events up until the present time are reported, and events are interpreted through historical perspective. A brief analysis of forces which have driven the development of today's electronic technology and some projections of present trends are given. More detailed discussions are presented for four areas of contemporary interest: amorphous semiconductors, bubble domain devices, charge-coupled devices, and electron and ion beam techniques. Beam addressed magnetic memories are reviewed to a lesser extent.

Data-driven identification of intensity normalization region based on longitudinal coherency of 18F-FDG metabolism in the healthy brain.

PubMed

Zhang, Huiwei; Wu, Ping; Ziegler, Sibylle I; Guan, Yihui; Wang, Yuetao; Ge, Jingjie; Schwaiger, Markus; Huang, Sung-Cheng; Zuo, Chuantao; Förster, Stefan; Shi, Kuangyu

2017-02-01

In brain 18 F-FDG PET data intensity normalization is usually applied to control for unwanted factors confounding brain metabolism. However, it can be difficult to determine a proper intensity normalization region as a reference for the identification of abnormal metabolism in diseased brains. In neurodegenerative disorders, differentiating disease-related changes in brain metabolism from age-associated natural changes remains challenging. This study proposes a new data-driven method to identify proper intensity normalization regions in order to improve separation of age-associated natural changes from disease related changes in brain metabolism. 127 female and 128 male healthy subjects (age: 20 to 79) with brain 18 F-FDG PET/CT in the course of a whole body cancer screening were included. Brain PET images were processed using SPM8 and were parcellated into 116 anatomical regions according to the AAL template. It is assumed that normal brain 18 F-FDG metabolism has longitudinal coherency and this coherency leads to better model fitting. The coefficient of determination R 2 was proposed as the coherence coefficient, and the total coherence coefficient (overall fitting quality) was employed as an index to assess proper intensity normalization strategies on single subjects and age-cohort averaged data. Age-associated longitudinal changes of normal subjects were derived using the identified intensity normalization method correspondingly. In addition, 15 subjects with clinically diagnosed Parkinson's disease were assessed to evaluate the clinical potential of the proposed new method. Intensity normalizations by paracentral lobule and cerebellar tonsil, both regions derived from the new data-driven coherency method, showed significantly better coherence coefficients than other intensity normalization regions, and especially better than the most widely used global mean normalization. Intensity normalization by paracentral lobule was the most consistent method within both analysis strategies (subject-based and age-cohort averaging). In addition, the proposed new intensity normalization method using the paracentral lobule generates significantly higher differentiation from the age-associated changes than other intensity normalization methods. Proper intensity normalization can enhance the longitudinal coherency of normal brain glucose metabolism. The paracentral lobule followed by the cerebellar tonsil are shown to be the two most stable intensity normalization regions concerning age-dependent brain metabolism. This may provide the potential to better differentiate disease-related changes from age-related changes in brain metabolism, which is of relevance in the diagnosis of neurodegenerative disorders. Copyright © 2016 Elsevier Inc. All rights reserved.

Nanometer resolution optical coherence tomography using broad bandwidth XUV and soft x-ray radiation

DOE PAGES

Fuchs, Silvio; Rödel, Christian; Blinne, Alexander; ...

2016-02-10

Optical coherence tomography (OCT) is a non-invasive technique for cross-sectional imaging. It is particularly advantageous for applications where conventional microscopy is not able to image deeper layers of samples in a reasonable time, e.g. in fast moving, deeper lying structures. However, at infrared and optical wavelengths, which are commonly used, the axial resolution of OCT is limited to about 1 μm, even if the bandwidth of the light covers a wide spectral range. Here, we present extreme ultraviolet coherence tomography (XCT) and thus introduce a new technique for non-invasive cross-sectional imaging of nanometer structures. XCT exploits the nanometerscale coherence lengthsmore » corresponding to the spectral transmission windows of, e.g., silicon samples. The axial resolution of coherence tomography is thus improved from micrometers to a few nanometers. Tomographic imaging with an axial resolution better than 18 nm is demonstrated for layer-type nanostructures buried in a silicon substrate. Using wavelengths in the water transmission window, nanometer-scale layers of platinum are retrieved with a resolution better than 8 nm. As a result, XCT as a nondestructive method for sub-surface tomographic imaging holds promise for several applications in semiconductor metrology and imaging in the water window.« less

Topological Quantum Buses: Coherent Quantum Information Transfer between Topological and Conventional Qubits

NASA Astrophysics Data System (ADS)

Bonderson, Parsa; Lutchyn, Roman M.

2011-04-01

We propose computing bus devices that enable quantum information to be coherently transferred between topological and conventional qubits. We describe a concrete realization of such a topological quantum bus acting between a topological qubit in a Majorana wire network and a conventional semiconductor double quantum dot qubit. Specifically, this device measures the joint (fermion) parity of these two different qubits by using the Aharonov-Casher effect in conjunction with an ancilliary superconducting flux qubit that facilitates the measurement. Such a parity measurement, together with the ability to apply Hadamard gates to the two qubits, allows one to produce states in which the topological and conventional qubits are maximally entangled and to teleport quantum states between the topological and conventional quantum systems.

Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sooheyong; Williams, G. Jackson; Campana, Maria I.

Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Finally, using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acousticmore » oscillations at frequencies of several GHz.« less

Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

DOE PAGES

Lee, Sooheyong; Williams, G. Jackson; Campana, Maria I.; ...

2016-01-11

Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Finally, using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acousticmore » oscillations at frequencies of several GHz.« less

Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

DTIC Science & Technology

2016-09-01

TECHNICAL REPORT 3046 September 2016 GENERATION OF QUALITY PULSES FOR CONTROL OF QUBIT/QUANTUM MEMORY SPIN STATES: EXPERIMENTAL AND SIMULATION...nuclear spin states of qubits/quantum memory applicable to semiconductor, superconductor, ionic, and superconductor-ionic hybrid technologies. As the...pulse quality and need for development of single pulses with very high quality will impact directly the coherence time of the qubit/ memory , we present

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

PubMed Central

Webber, Daniel; de Boer, Tristan; Yildirim, Murat; March, Sam; Mathew, Reuble; Gamouras, Angela; Liu, Xinyu; Dobrowolska, Margaret; Furdyna, Jacek; Hall, Kimberley

2013-01-01

The application of femtosecond four-wave mixing to the study of fundamental properties of diluted magnetic semiconductors ((s,p)-d hybridization, spin-flip scattering) is described, using experiments on GaMnAs as a prototype III-Mn-V system.  Spectrally-resolved and time-resolved experimental configurations are described, including the use of zero-background autocorrelation techniques for pulse optimization.  The etching process used to prepare GaMnAs samples for four-wave mixing experiments is also highlighted.  The high temporal resolution of this technique, afforded by the use of short (20 fsec) optical pulses, permits the rapid spin-flip scattering process in this system to be studied directly in the time domain, providing new insight into the strong exchange coupling responsible for carrier-mediated ferromagnetism.  We also show that spectral resolution of the four-wave mixing signal allows one to extract clear signatures of (s,p)-d hybridization in this system, unlike linear spectroscopy techniques.   This increased sensitivity is due to the nonlinearity of the technique, which suppresses defect-related contributions to the optical response. This method may be used to measure the time scale for coherence decay (tied to the fastest scattering processes) in a wide variety of semiconductor systems of interest for next generation electronics and optoelectronics. PMID:24326982

Coherence explored between emotion components: evidence from event-related potentials and facial electromyography.

PubMed

Gentsch, Kornelia; Grandjean, Didier; Scherer, Klaus R

2014-04-01

Componential theories assume that emotion episodes consist of emergent and dynamic response changes to relevant events in different components, such as appraisal, physiology, motivation, expression, and subjective feeling. In particular, Scherer's Component Process Model hypothesizes that subjective feeling emerges when the synchronization (or coherence) of appraisal-driven changes between emotion components has reached a critical threshold. We examined the prerequisite of this synchronization hypothesis for appraisal-driven response changes in facial expression. The appraisal process was manipulated by using feedback stimuli, presented in a gambling task. Participants' responses to the feedback were investigated in concurrently recorded brain activity related to appraisal (event-related potentials, ERP) and facial muscle activity (electromyography, EMG). Using principal component analysis, the prediction of appraisal-driven response changes in facial EMG was examined. Results support this prediction: early cognitive processes (related to the feedback-related negativity) seem to primarily affect the upper face, whereas processes that modulate P300 amplitudes tend to predominantly drive cheek region responses. Copyright © 2013 Elsevier B.V. All rights reserved.

Surface Plasmon-Assisted Solar Energy Conversion.

PubMed

Dodekatos, Georgios; Schünemann, Stefan; Tüysüz, Harun

2016-01-01

The utilization of localized surface plasmon resonance (LSPR) from plasmonic noble metals in combination with semiconductors promises great improvements for visible light-driven photocatalysis, in particular for energy conversion. This review summarizes the basic principles of plasmonic photocatalysis, giving a comprehensive overview about the proposed mechanisms for enhancing the performance of photocatalytically active semiconductors with plasmonic devices and their applications for surface plasmon-assisted solar energy conversion. The main focus is on gold and, to a lesser extent, silver nanoparticles in combination with titania as semiconductor and their usage as active plasmonic photocatalysts. Recent advances in water splitting, hydrogen generation with sacrificial organic compounds, and CO2 reduction to hydrocarbons for solar fuel production are highlighted. Finally, further improvements for plasmonic photocatalysts, regarding performance, stability, and economic feasibility, are discussed for surface plasmon-assisted solar energy conversion.

Metasurface Mirrors for External Control of Mie Resonances.

PubMed

van de Groep, Jorik; Brongersma, Mark L

2018-06-13

The ability to control and structurally tune the optical resonances of semiconductor nanostructures has far-reaching implications for a wide range of optical applications, including photodetectors, (bio)sensors, and photovoltaics. Such control is commonly obtained by tailoring the nanostructure's geometry, material, or dielectric environment. Here, we combine insights from the field of coherent optics and metasurface mirrors to effectively turn Mie resonances on and off with high spatial control and in a polarization-dependent fashion. We illustrate this in an integrated device by manipulating the photocurrent spectra of a single-nanowire photodetector placed on a metasurface mirror. This approach can be generalized to control spectral, angle-dependent, absorption, and scattering properties of semiconductor nanostructures with an engineered metasurface and without a need to alter their geometric or materials properties.

Turbulent chimeras in large semiconductor laser arrays

PubMed Central

Shena, J.; Hizanidis, J.; Kovanis, V.; Tsironis, G. P.

2017-01-01

Semiconductor laser arrays have been investigated experimentally and theoretically from the viewpoint of temporal and spatial coherence for the past forty years. In this work, we are focusing on a rather novel complex collective behavior, namely chimera states, where synchronized clusters of emitters coexist with unsynchronized ones. For the first time, we find such states exist in large diode arrays based on quantum well gain media with nearest-neighbor interactions. The crucial parameters are the evanescent coupling strength and the relative optical frequency detuning between the emitters of the array. By employing a recently proposed figure of merit for classifying chimera states, we provide quantitative and qualitative evidence for the observed dynamics. The corresponding chimeras are identified as turbulent according to the irregular temporal behavior of the classification measure. PMID:28165053

Turbulent chimeras in large semiconductor laser arrays

NASA Astrophysics Data System (ADS)

Shena, J.; Hizanidis, J.; Kovanis, V.; Tsironis, G. P.

2017-02-01

Semiconductor laser arrays have been investigated experimentally and theoretically from the viewpoint of temporal and spatial coherence for the past forty years. In this work, we are focusing on a rather novel complex collective behavior, namely chimera states, where synchronized clusters of emitters coexist with unsynchronized ones. For the first time, we find such states exist in large diode arrays based on quantum well gain media with nearest-neighbor interactions. The crucial parameters are the evanescent coupling strength and the relative optical frequency detuning between the emitters of the array. By employing a recently proposed figure of merit for classifying chimera states, we provide quantitative and qualitative evidence for the observed dynamics. The corresponding chimeras are identified as turbulent according to the irregular temporal behavior of the classification measure.

Direct photonic coupling of a semiconductor quantum dot and a trapped ion.

PubMed

Meyer, H M; Stockill, R; Steiner, M; Le Gall, C; Matthiesen, C; Clarke, E; Ludwig, A; Reichel, J; Atatüre, M; Köhl, M

2015-03-27

Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of a Yb^{+} ion. We ameliorate the effect of the 60-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the σ_{z} projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum-state transfer in a hybrid photonic network.

Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

DOE PAGES

Kowarik, S.; Hinderhofer, A.; Wang, C.; ...

2015-11-30

Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ~ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findingsmore » are important for the development of novel organic quantum optoelectronic devices.« less

Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics

PubMed Central

Lejman, Mariusz; Vaudel, Gwenaelle; Infante, Ingrid C.; Chaban, Ievgeniia; Pezeril, Thomas; Edely, Mathieu; Nataf, Guillaume F.; Guennou, Mael; Kreisel, Jens; Gusev, Vitalyi E.; Dkhil, Brahim; Ruello, Pascal

2016-01-01

The ability to generate efficient giga–terahertz coherent acoustic phonons with femtosecond laser makes acousto-optics a promising candidate for ultrafast light processing, which faces electronic device limits intrinsic to complementary metal oxide semiconductor technology. Modern acousto-optic devices, including optical mode conversion process between ordinary and extraordinary light waves (and vice versa), remain limited to the megahertz range. Here, using coherent acoustic waves generated at tens of gigahertz frequency by a femtosecond laser pulse, we reveal the mode conversion process and show its efficiency in ferroelectric materials such as BiFeO3 and LiNbO3. Further to the experimental evidence, we provide a complete theoretical support to this all-optical ultrafast mechanism mediated by acousto-optic interaction. By allowing the manipulation of light polarization with gigahertz coherent acoustic phonons, our results provide a novel route for the development of next-generation photonic-based devices and highlight new capabilities in using ferroelectrics in modern photonics. PMID:27492493

Nonlinear optical spectra having characteristics of Fano interferences in coherently coupled lowest exciton biexciton states in semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gotoh, Hideki, E-mail: gotoh.hideki@lab.ntt.co.jp; Sanada, Haruki; Yamaguchi, Hiroshi

2014-10-15

Optical nonlinear effects are examined using a two-color micro-photoluminescence (micro-PL) method in a coherently coupled exciton-biexciton system in a single quantum dot (QD). PL and photoluminescence excitation spectroscopy (PLE) are employed to measure the absorption spectra of the exciton and biexciton states. PLE for Stokes and anti-Stokes PL enables us to clarify the nonlinear optical absorption properties in the lowest exciton and biexciton states. The nonlinear absorption spectra for excitons exhibit asymmetric shapes with peak and dip structures, and provide a distinct contrast to the symmetric dip structures of conventional nonlinear spectra. Theoretical analyses with a density matrix method indicatemore » that the nonlinear spectra are caused not by a simple coherent interaction between the exciton and biexciton states but by coupling effects among exciton, biexciton and continuum states. These results indicate that Fano quantum interference effects appear in exciton-biexciton systems at QDs and offer important insights into their physics.« less

Coherent coupling between a quantum dot and a donor in silicon

DOE PAGES

Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin; ...

2017-10-18

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a 31P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show thatmore » the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.« less

Ultrafast terahertz snapshots of excitonic Rydberg states and electronic coherence in an organometal halide perovskite

DOE PAGES

Luo, Liang; Men, Long; Liu, Zhaoyu; ...

2017-06-01

How photoexcitations evolve into Coulomb-bound electron and hole pairs, called excitons, and unbound charge carriers is a key cross-cutting issue in photovoltaics and optoelectronics. Until now, the initial quantum dynamics following photoexcitation remains elusive in the hybrid perovskite system. Furthermore we reveal excitonic Rydberg states with distinct formation pathways by observing the multiple resonant, internal quantum transitions using ultrafast terahertz quasi-particle transport. Nonequilibrium emergent states evolve with a complex co-existence of excitons, carriers and phonons, where a delayed buildup of excitons under on- and off-resonant pumping conditions allows us to distinguish between the loss of electronic coherence and hot statemore » cooling processes. The nearly ~1 ps dephasing time, efficient electron scattering with discrete terahertz phonons and intermediate binding energy of ~13.5 meV in perovskites are distinct from conventional photovoltaic semiconductors. In addition to providing implications for coherent energy conversion, these are potentially relevant to the development of light-harvesting and electron-transport devices.« less

Ultrafast terahertz snapshots of excitonic Rydberg states and electronic coherence in an organometal halide perovskite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Liang; Men, Long; Liu, Zhaoyu

How photoexcitations evolve into Coulomb-bound electron and hole pairs, called excitons, and unbound charge carriers is a key cross-cutting issue in photovoltaics and optoelectronics. Until now, the initial quantum dynamics following photoexcitation remains elusive in the hybrid perovskite system. Furthermore we reveal excitonic Rydberg states with distinct formation pathways by observing the multiple resonant, internal quantum transitions using ultrafast terahertz quasi-particle transport. Nonequilibrium emergent states evolve with a complex co-existence of excitons, carriers and phonons, where a delayed buildup of excitons under on- and off-resonant pumping conditions allows us to distinguish between the loss of electronic coherence and hot statemore » cooling processes. The nearly ~1 ps dephasing time, efficient electron scattering with discrete terahertz phonons and intermediate binding energy of ~13.5 meV in perovskites are distinct from conventional photovoltaic semiconductors. In addition to providing implications for coherent energy conversion, these are potentially relevant to the development of light-harvesting and electron-transport devices.« less

Butterfly Floquet Spectrum in Driven SU(2) Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Jiao; Department of Physics, Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen 361005; Gong Jiangbin

2009-06-19

The Floquet spectrum of a class of driven SU(2) systems is shown to display a butterfly pattern with multifractal properties. The level crossing between Floquet states of the same parity or different parities is studied. The results are relevant to studies of fractal statistics, quantum chaos, coherent destruction of tunneling, and the validity of mean-field descriptions of Bose-Einstein condensates.

Synthesis of visible-light responsive graphene oxide/TiO(2) composites with p/n heterojunction.

PubMed

Chen, Chao; Cai, Weimin; Long, Mingce; Zhou, Baoxue; Wu, Yahui; Wu, Deyong; Feng, Yujie

2010-11-23

Graphene oxide/TiO(2) composites were prepared by using TiCl(3) and graphene oxide as reactants. The concentration of graphene oxide in starting solution played an important role in photoelectronic and photocatalytic performance of graphene oxide/TiO(2) composites. Either a p-type or n-type semiconductor was formed by graphene oxide in graphene oxide/TiO(2) composites. These semiconductors could be excited by visible light with wavelengths longer than 510 nm and acted as sensitizer in graphene oxide/TiO(2) composites. Visible-light driven photocatalytic performance of graphene oxide/TiO(2) composites in degradation of methyl orange was also studied. Crystalline quality and chemical states of carbon elements from graphene oxide in graphene oxide/TiO(2) composites depended on the concentration of graphene oxide in the starting solution. This study shows a possible way to fabricate graphene oxide/semiconductor composites with different properties by using a tunable semiconductor conductivity type of graphene oxide.

Epitaxy of advanced nanowire quantum devices

NASA Astrophysics Data System (ADS)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Coherent Doppler lidar for automated space vehicle, rendezvous, station-keeping and capture

NASA Technical Reports Server (NTRS)

Dunkin, James A.

1991-01-01

Recent advances in eye-safe, short wavelength solid-state lasers offer real potential for the development of compact, reliable, light-weight, efficient coherent lidar. Laser diode pumping of these devices has been demonstrated, thereby eliminating the need for flash lamp pumping, which has been a major drawback to the use of these lasers in space based applications. Also these lasers now have the frequency stability required to make them useful in coherent lidar, which offers all of the advantages of non-coherent lidar, but with the additional advantage that direct determination of target velocity is possible by measurement of the Doppler shift. By combining the Doppler velocity measurement capability with the inherent high angular resolution and range accuracy of lidar it is possible to construct Doppler images of targets for target motion assessment. A coherent lidar based on a Tm,Ho:YAG 2-micrometer wavelength laser was constructed and successfully field tested on atmospheric targets in 1990. This lidar incorporated an all solid state (laser diode pumped) master oscillator, in conjunction with a flash lamp pumped slave oscillator. Solid-state laser technology is rapidly advancing, and with the advent of high efficiency, high power, semiconductor laser diodes as pump sources, all-solid-state, coherent lidars are a real possibility in the near future. MSFC currently has a feasibility demonstration effort under way which will involve component testing, and preliminary design of an all-solid-state, coherent lidar for automatic rendezvous, and capture. This two year effort, funded by the Director's Discretionary Fund is due for completion in 1992.

Quantitative optical coherence tomography imaging of intermediate flow defect phenotypes in ciliary physiology and pathophysiology

NASA Astrophysics Data System (ADS)

Huang, Brendan K.; Gamm, Ute A.; Jonas, Stephan; Khokha, Mustafa K.; Choma, Michael A.

2015-03-01

Cilia-driven fluid flow is a critical yet poorly understood aspect of pulmonary physiology. Here, we demonstrate that optical coherence tomography-based particle tracking velocimetry can be used to quantify subtle variability in cilia-driven flow performance in Xenopus, an important animal model of ciliary biology. Changes in flow performance were quantified in the setting of normal development, as well as in response to three types of perturbations: mechanical (increased fluid viscosity), pharmacological (disrupted serotonin signaling), and genetic (diminished ciliary motor protein expression). Of note, we demonstrate decreased flow secondary to gene knockdown of kif3a, a protein involved in ciliogenesis, as well as a dose-response decrease in flow secondary to knockdown of dnah9, an important ciliary motor protein.

Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR

NASA Astrophysics Data System (ADS)

Lecocq, Vincent; Chomet, Baptiste; Ferrières, Laurence; Myara, Mikhaël.; Beaudoin, Grégoire; Sagnes, Isabelle; Cerutti, Laurent; Denet, Stéphane; Garnache, Arnaud

2017-02-01

Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8-1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency laser micro-chip, intracavity element free, based on a patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high temporal coherence together with a low divergence diffraction limited TEM00 beam. They exhibit a class-A dynamics with a Relative Intensity Noise as low as -140dB/Hz and at shot noise level reached above 200MHz RF frequency (up to 160GHz), a free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), a linear polarization (>50dB suppression ratio), and broadband continuous tunability greater than 400GHz (< 30V piezo voltage, 6kHz cut off frequency) with total tunability up to 3THz. Those performances can all be reached thanks to the high finesse cavity of VECSEL technology, associated to ideal homogeneous QW gain behaviour [3]. In addition, the compact design without any movable intracavity elements offers a robust single frequency regime with a long term wavelength stability better than few GHz/h (ambient thermal drift limited). Those devices surpass the state of the art commercial technologies thanks to a combination of power-coherence-wavelength tunability performances and integration.

Seebeck coefficient of one electron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Durrani, Zahid A. K., E-mail: z.durrani@imperial.ac.uk

2014-03-07

The Seebeck coefficient of one electron, driven thermally into a semiconductor single-electron box, is investigated theoretically. With a finite temperature difference ΔT between the source and charging island, a single electron can charge the island in equilibrium, directly generating a Seebeck effect. Seebeck coefficients for small and finite ΔT are calculated and a thermally driven Coulomb staircase is predicted. Single-electron Seebeck oscillations occur with increasing ΔT, as one electron at a time charges the box. A method is proposed for experimental verification of these effects.

Optimal quantum operations at zero energy cost

NASA Astrophysics Data System (ADS)

Chiribella, Giulio; Yang, Yuxiang

2017-08-01

Quantum technologies are developing powerful tools to generate and manipulate coherent superpositions of different energy levels. Envisaging a new generation of energy-efficient quantum devices, here we explore how coherence can be manipulated without exchanging energy with the surrounding environment. We start from the task of converting a coherent superposition of energy eigenstates into another. We identify the optimal energy-preserving operations, both in the deterministic and in the probabilistic scenario. We then design a recursive protocol, wherein a branching sequence of energy-preserving filters increases the probability of success while reaching maximum fidelity at each iteration. Building on the recursive protocol, we construct efficient approximations of the optimal fidelity-probability trade-off, by taking coherent superpositions of the different branches generated by probabilistic filtering. The benefits of this construction are illustrated in applications to quantum metrology, quantum cloning, coherent state amplification, and ancilla-driven computation. Finally, we extend our results to transitions where the input state is generally mixed and we apply our findings to the task of purifying quantum coherence.

Spatially indirect excitons in coupled quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Chih-Wei Eddy

2004-03-01

Microscopic quantum phenomena such as interference or phase coherence between different quantum states are rarely manifest in macroscopic systems due to a lack of significant correlation between different states. An exciton system is one candidate for observation of possible quantum collective effects. In the dilute limit, excitons in semiconductors behave as bosons and are expected to undergo Bose-Einstein condensation (BEC) at a temperature several orders of magnitude higher than for atomic BEC because of their light mass. Furthermore, well-developed modern semiconductor technologies offer flexible manipulations of an exciton system. Realization of BEC in solid-state systems can thus provide new opportunitiesmore » for macroscopic quantum coherence research. In semiconductor coupled quantum wells (CQW) under across-well static electric field, excitons exist as separately confined electron-hole pairs. These spatially indirect excitons exhibit a radiative recombination time much longer than their thermal relaxation time a unique feature in direct band gap semiconductor based structures. Their mutual repulsive dipole interaction further stabilizes the exciton system at low temperature and screens in-plane disorder more effectively. All these features make indirect excitons in CQW a promising system to search for quantum collective effects. Properties of indirect excitons in CQW have been analyzed and investigated extensively. The experimental results based on time-integrated or time-resolved spatially-resolved photoluminescence (PL) spectroscopy and imaging are reported in two categories. (i) Generic indirect exciton systems: general properties of indirect excitons such as the dependence of exciton energy and lifetime on electric fields and densities were examined. (ii) Quasi-two-dimensional confined exciton systems: highly statistically degenerate exciton systems containing more than tens of thousands of excitons within areas as small as (10 micrometer) 2 were observed. The spatial and energy distributions of optically active excitons were used as thermodynamic quantities to construct a phase diagram of the exciton system, demonstrating the existence of distinct phases. Optical and electrical properties of the CQW sample were examined thoroughly to provide deeper understanding of the formation mechanisms of these cold exciton systems. These insights offer new strategies for producing cold exciton systems, which may lead to opportunities for the realization of BEC in solid-state systems.« less

A dressed spin qubit in silicon

DOE PAGES

Laucht, Arne; Kalra, Rachpon; Simmons, Stephanie; ...

2016-10-17

Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties—a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of T* 2p = 2.4 ms andmore » T Hahn 2p = 9 ms, one order of magnitude longer than those of the undressed spin. Moreover, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.« less

Analysis of Technology for Compact Coherent Lidar

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin

1997-01-01

In view of the recent advances in the area of solid state and semiconductor lasers has created new possibilities for the development of compact and reliable coherent lidars for a wide range of applications. These applications include: Automated Rendezvous and Capture, wind shear and clear air turbulence detection, aircraft wake vortex detection, and automobile collision avoidance. The work performed by the UAH personnel under this Delivery Order, concentrated on design and analyses of a compact coherent lidar system capable of measuring range and velocity of hard targets, and providing air mass velocity data. The following is the scope of this work. a. Investigate various laser sources and optical signal detection configurations in support of a compact and lightweight coherent laser radar to be developed for precision range and velocity measurements of hard and fuzzy targets. Through interaction with MSFC engineers, the most suitable laser source and signal detection technique that can provide a reliable compact and lightweight laser radar design will be selected. b. Analyze and specify the coherent laser radar system configuration and assist with its optical and electronic design efforts. Develop a system design including its optical layout design. Specify all optical components and provide the general requirements of the electronic subsystems including laser beam modulator and demodulator drivers, detector electronic interface, and the signal processor. c. Perform a thorough performance analysis to predict the system measurement range and accuracy. This analysis will utilize various coherent laser radar sensitivity formulations and different target models.

Ultrafast Three-Dimensional Integrated Imaging of Strain in Core/Shell Semiconductor/Metal Nanostructures

DOE PAGES

Cherukara, Mathew J.; Sasikumar, Kiran; DiChiara, Anthony; ...

2017-11-07

Visualizing the dynamical response of material heterointerfaces is increasingly important for the design of hybrid materials and structures with tailored properties for use in functional devices. In situ characterization of nanoscale heterointerfaces such as metal-semiconductor interfaces, which exhibit a complex interplay between lattice strain, electric potential, and heat transport at subnanosecond time scales, is particularly challenging. Here in this work, we use a laser pump/X-ray probe form of Bragg coherent diffraction imaging (BCDI) to visualize in three-dimension the deformation of the core of a model core/shell semiconductor-metal (ZnO/Ni) nanorod following laser heating of the shell. We observe a rich interplaymore » of radial, axial, and shear deformation modes acting at different time scales that are induced by the strain from the Ni shell. We construct experimentally informed models by directly importing the reconstructed crystal from the ultrafast experiment into a thermo-electromechanical continuum model. The model elucidates the origin of the deformation modes observed experimentally. Our integrated imaging approach represents an invaluable tool to probe strain dynamics across mixed interfaces under operando conditions.« less

Ultrafast Three-Dimensional Integrated Imaging of Strain in Core/Shell Semiconductor/Metal Nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherukara, Mathew J.; Sasikumar, Kiran; DiChiara, Anthony

Visualizing the dynamical response of material heterointerfaces is increasingly important for the design of hybrid materials and structures with tailored properties for use in functional devices. In situ characterization of nanoscale heterointerfaces such as metal-semiconductor interfaces, which exhibit a complex interplay between lattice strain, electric potential, and heat transport at subnanosecond time scales, is particularly challenging. Here in this work, we use a laser pump/X-ray probe form of Bragg coherent diffraction imaging (BCDI) to visualize in three-dimension the deformation of the core of a model core/shell semiconductor-metal (ZnO/Ni) nanorod following laser heating of the shell. We observe a rich interplaymore » of radial, axial, and shear deformation modes acting at different time scales that are induced by the strain from the Ni shell. We construct experimentally informed models by directly importing the reconstructed crystal from the ultrafast experiment into a thermo-electromechanical continuum model. The model elucidates the origin of the deformation modes observed experimentally. Our integrated imaging approach represents an invaluable tool to probe strain dynamics across mixed interfaces under operando conditions.« less

Experimental study of disorder in a semiconductor microcavity

NASA Astrophysics Data System (ADS)

Gurioli, M.; Bogani, F.; Wiersma, D. S.; Roussignol, Ph.; Cassabois, G.; Khitrova, G.; Gibbs, H.

2001-10-01

A detailed study of the structural disorder in wedge semiconductor microcavities (MC's) is presented. We demonstrate that images of the coherent emission from the MC surface can be used for a careful characterization of both intrinsic and extrinsic optical properties of semiconductor MC's. The polariton broadening can be measured directly, avoiding the well-known problem of inhomogeneous broadening due to the MC wedge. A statistical analysis of the spatial line shape of the images of the MC surface shows the presence of static disorder associated with dielectric fluctuations in the Bragg reflector. Moreover, the presence of local fluctuations of the effective cavity length can be detected with subnanometer resolution. The analysis of the resonant Rayleigh scattering (RRS) gives additional information on the origin of the disorder. We find that the RRS is dominated by the scattering of the photonic component of the MC polariton by disorder in the Bragg reflector. Also the RRS is strongly enhanced along the [110] and [11¯0] directions. This peculiar scattering pattern is attributed to misfit dislocations induced by the large thickness of the mismatched AlGaAs alloy in the Bragg mirrors.

Ultrafast Three-Dimensional Integrated Imaging of Strain in Core/Shell Semiconductor/Metal Nanostructures.

PubMed

Cherukara, Mathew J; Sasikumar, Kiran; DiChiara, Anthony; Leake, Steven J; Cha, Wonsuk; Dufresne, Eric M; Peterka, Tom; McNulty, Ian; Walko, Donald A; Wen, Haidan; Sankaranarayanan, Subramanian K R S; Harder, Ross J

2017-12-13

Visualizing the dynamical response of material heterointerfaces is increasingly important for the design of hybrid materials and structures with tailored properties for use in functional devices. In situ characterization of nanoscale heterointerfaces such as metal-semiconductor interfaces, which exhibit a complex interplay between lattice strain, electric potential, and heat transport at subnanosecond time scales, is particularly challenging. In this work, we use a laser pump/X-ray probe form of Bragg coherent diffraction imaging (BCDI) to visualize in three-dimension the deformation of the core of a model core/shell semiconductor-metal (ZnO/Ni) nanorod following laser heating of the shell. We observe a rich interplay of radial, axial, and shear deformation modes acting at different time scales that are induced by the strain from the Ni shell. We construct experimentally informed models by directly importing the reconstructed crystal from the ultrafast experiment into a thermo-electromechanical continuum model. The model elucidates the origin of the deformation modes observed experimentally. Our integrated imaging approach represents an invaluable tool to probe strain dynamics across mixed interfaces under operando conditions.

Influence of the nuclear Zeeman effect on mode locking in pulsed semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Beugeling, Wouter; Uhrig, Götz S.; Anders, Frithjof B.

2017-09-01

The coherence of the electron spin in a semiconductor quantum dot is strongly enhanced by mode locking through nuclear focusing, where the synchronization of the electron spin to periodic pulsing is slowly transferred to the nuclear spins of the semiconductor material, mediated by the hyperfine interaction between these. The external magnetic field that drives the Larmor oscillations of the electron spin also subjects the nuclear spins to a Zeeman-like coupling, albeit a much weaker one. For typical magnetic fields used in experiments, the energy scale of the nuclear Zeeman effect is comparable to that of the hyperfine interaction, so that it is not negligible. In this work, we analyze the influence of the nuclear Zeeman effect on mode locking quantitatively. Within a perturbative framework, we calculate the Overhauser-field distribution after a prolonged period of pulsing. We find that the nuclear Zeeman effect can exchange resonant and nonresonant frequencies. We distinguish between models with a single type and with multiple types of nuclei. For the latter case, the positions of the resonances depend on the individual g factors, rather than on the average value.

Optical arbitrary waveform generation based on multi-wavelength semiconductor fiber ring laser

NASA Astrophysics Data System (ADS)

Li, Peili; Ma, Xiaolu; Shi, Weihua; Xu, Enming

2017-09-01

A new scheme of generating optical arbitrary waveforms based on multi-wavelength semiconductor fiber ring laser (SFRL) is proposed. In this novel scheme, a wide and flat optical frequency comb (OFC) is provided directly by multi-wavelength SFRL, whose central frequency and comb spacing are tunable. OFC generation, de-multiplexing, amplitude and phase modulation, and multiplexing are implementing in an intensity and phase tunable comb filter, as induces the merits of high spectral coherence, satisfactory waveform control and low system loss. By using the mode couple theory and the transfer matrix method, the theoretical model of the scheme is established. The impacts of amplitude control, phase control, number of spectral line, and injection current of semiconductor optical amplifier (SOA) on the waveform similarity are studied using the theoretical model. The results show that, amplitude control and phase control error should be smaller than 1% and 0.64% respectively to achieve high similarity. The similarity of the waveform is improved with the increase of the number of spectral line. When the injection current of SOA is in a certain range, the optical arbitrary waveform reaches a high similarity.

Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2014-02-01

The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

Topological quantum buses: coherent quantum information transfer between topological and conventional qubits.

PubMed

Bonderson, Parsa; Lutchyn, Roman M

2011-04-01

We propose computing bus devices that enable quantum information to be coherently transferred between topological and conventional qubits. We describe a concrete realization of such a topological quantum bus acting between a topological qubit in a Majorana wire network and a conventional semiconductor double quantum dot qubit. Specifically, this device measures the joint (fermion) parity of these two different qubits by using the Aharonov-Casher effect in conjunction with an ancilliary superconducting flux qubit that facilitates the measurement. Such a parity measurement, together with the ability to apply Hadamard gates to the two qubits, allows one to produce states in which the topological and conventional qubits are maximally entangled and to teleport quantum states between the topological and conventional quantum systems. © 2011 American Physical Society

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

NASA Astrophysics Data System (ADS)

Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian-Mao

2017-06-01

Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies

DOE PAGES

Seo, Hosung; Govoni, Marco; Galli, Giulia

2016-02-15

Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states maymore » be harnessed for the realization of qubits. As a result, the strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.« less

Entropy-driven loss of gas-phase Group 5 species from GOLD/3-5 compound semiconductor systems

NASA Astrophysics Data System (ADS)

Pugh, J. H.; Williams, R. S.

1986-02-01

Temperature dependent chemical interactions between Au and nine 3-5 compound semiconductors (3=A1, Ga, In and V=P, As, Sb) have been calculated using bulk thermodynamic properties. Enthalpic considerations alone are insufficient to predict metal/compound-semiconductor reactivities. The entropy of vaporization of the group 5 elements is shown to be an extremely important driving force for chemical reactions involving the 3-5's, since it enables several endothermic reactions to occur spontaneously under certain temperature and pressure conditions. Plots of either Gibb's free energies of reaction or equilibrium vapor pressure of the group 5 element versus temperature are used to predict critical reaction temperatures for each of the systems studied. These plots agree extremely well with previous experimental observations of thin film reactions of Au on GaAs.

Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

NASA Astrophysics Data System (ADS)

Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

2016-05-01

It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

Spin Coherence at the Nanoscale: Polymer Surfaces and Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Epstein, Arthur J.

2013-09-10

Breakthrough results were achieved during the reporting period in the areas of organic spintronics. (A) For the first time the giant magnetic resistance (GMR) was observed in spin valve with an organic spacer. Thus we demonstrated the ability of organic semiconductors to transport spin in GMR devices using rubrene as a prototype for organic semiconductors. (B) We discovered the electrical bistability and spin valve effect in a ferromagnet /organic semiconductor/ ferromagnet heterojunction. The mechanism of switching between conducting phases and its potential applications were suggested. (C) The ability of V(TCNE)x to inject spin into organic semiconductors such as rubrene wasmore » demonstrated for the first time. The mechanisms of spin injection and transport from and into organic magnets as well through organic semiconductors were elucidated. (D) In collaboration with the group of OSU Prof. Johnston-Halperin we reported the successful extraction of spin polarized current from a thin film of the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). Thus all basic steps for fabrication of room temperature, light weight, flexible all organic spintronic devices were successfully performed. (E) A new synthesis/processing route for preparation of V(TCNE)x enabling control of interface and film thicknesses at the nanoscale was developed at OSU. Preliminary results show these films are higher quality and what is extremely important they are substantially more air stable than earlier prepared V(TCNE)x. In sum the breakthrough results we achieved in the past two years form the basis of a promising new technology, Multifunctional Flexible Organic-based Spintronics (MFOBS). MFOBS technology enables us fabrication of full function flexible spintronic devices that operate at room temperature.« less

Slow Light Using Electromagnetically Induced Transparency from Spin Coherence in [110] Strained Quantum Wells

NASA Astrophysics Data System (ADS)

Chang, Shu-Wei; Chang-Hasnain, Connie J.; Wang, Hailin

2005-03-01

The electromagnetically induced transparency from spin coherence has been proposed in [001] quantum wells recently. [1] The spin coherence is a potential candidate to demonstrate semiconductor-based slow light at room temperature. However, the spin coherence time is not long enough to demonstrate a significant slowdown factor in [001] quantum wells. Further, the required transition of light-hole excitons lies in the absorption of heavy-hole continuum states. The extra dephasing and absorption from these continuum states are drawbacks for slow light. Here, we propose to use [110] strained quantum wells instead of [001] quantum wells. The long spin relaxation time in [110] quantum wells at room temperature, and thus more robust spin coherence, [2] as well as the strain-induced separation [3, 4] of the light-hole exciton transition from the heavy-hole continuum absorption can help to slow down light in quantum wells. [1] T. Li, H. Wang, N. H. Kwong, and R. Binder, Opt. Express 11, 3298 (2003). [2] Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, Phys. Rev. Lett. 83, 4196 (1999). [3] C. Y. P. Chao and S. L. Chuang, Phys. Rev. B 46, 4110 (1992). [4] C. Jagannath, E. S. Koteles, J. Lee, Y. J. Chen, B. S. Elman, and J. Y. Chi, Phys. Rev. B 34, 7027 (1986).

Assembly of mesoscale helices with near-unity enantiomeric excess and light-matter interactions for chiral semiconductors.

PubMed

Feng, Wenchun; Kim, Ji-Young; Wang, Xinzhi; Calcaterra, Heather A; Qu, Zhibei; Meshi, Louisa; Kotov, Nicholas A

2017-03-01

Semiconductors with chiral geometries at the nanoscale and mesoscale provide a rich materials platform for polarization optics, photocatalysis, and biomimetics. Unlike metallic and organic optical materials, the relationship between the geometry of chiral semiconductors and their chiroptical properties remains, however, vague. Homochiral ensembles of semiconductor helices with defined geometries open the road to understanding complex relationships between geometrical parameters and chiroptical properties of semiconductor materials. We show that semiconductor helices can be prepared with an absolute yield of ca 0.1% and an enantiomeric excess (e.e.) of 98% or above from cysteine-stabilized cadmium telluride nanoparticles (CdTe NPs) dispersed in methanol. This high e.e. for a spontaneously occurring chemical process is attributed to chiral self-sorting based on the thermodynamic preference of NPs to assemble with those of the same handedness. The dispersions of homochiral self-assembled helices display broadband visible and near-infrared (Vis-NIR) polarization rotation with anisotropy ( g ) factors approaching 0.01. Calculated circular dichroism (CD) spectra accurately reproduced experimental CD spectra and gave experimentally validated spectral predictions for different geometrical parameters enabling de novo design of chiroptical semiconductor materials. Unlike metallic, ceramic, and polymeric helices that serve predominantly as scatterers, chiroptical properties of semiconductor helices have nearly equal contribution of light absorption and scattering, which is essential for device-oriented, field-driven light modulation. Deconstruction of a helix into a series of nanorods provides a simple model for the light-matter interaction and chiroptical activity of helices. This study creates a framework for further development of polarization-based optics toward biomedical applications, telecommunications, and hyperspectral imaging.

Radio-frequency measurement in semiconductor quantum computation

NASA Astrophysics Data System (ADS)

Han, TianYi; Chen, MingBo; Cao, Gang; Li, HaiOu; Xiao, Ming; Guo, GuoPing

2017-05-01

Semiconductor quantum dots have attracted wide interest for the potential realization of quantum computation. To realize efficient quantum computation, fast manipulation and the corresponding readout are necessary. In the past few decades, considerable progress of quantum manipulation has been achieved experimentally. To meet the requirements of high-speed readout, radio-frequency (RF) measurement has been developed in recent years, such as RF-QPC (radio-frequency quantum point contact) and RF-DGS (radio-frequency dispersive gate sensor). Here we specifically demonstrate the principle of the radio-frequency reflectometry, then review the development and applications of RF measurement, which provides a feasible way to achieve high-bandwidth readout in quantum coherent control and also enriches the methods to study these artificial mesoscopic quantum systems. Finally, we prospect the future usage of radio-frequency reflectometry in scaling-up of the quantum computing models.

Progressive Design of Plasmonic Metal-Semiconductor Ensemble toward Regulated Charge Flow and Improved Vis-NIR-Driven Solar-to-Chemical Conversion.

PubMed

Han, Chuang; Quan, Quan; Chen, Hao Ming; Sun, Yugang; Xu, Yi-Jun

2017-04-01

Surface plasmon resonance (SPR)-mediated photocatalysis without the bandgap limitations of traditional semiconductor has aroused significant attention in solar-to-chemical energy conversion. However, the photocatalytic efficiency barely initiated by the SPR effects is still challenged by the low concentration and ineffective extraction of energetic hot electrons, slow charge migration rates, random charge diffusion directions, and the lack of highly active sites for redox reactions. Here, the tunable, progressive harvesting of visible-to-near infrared light (vis-NIR, λ > 570 nm) by designing plasmonic Au nanorods and metal (Au, Ag, or Pt) nanoparticle codecorated 1D CdS nanowire (1D CdS NW) ensemble is reported. The intimate integration of these metal nanostructures with 1D CdS NWs promotes the extraction and manipulated directional separation and migration of hot charge carriers in a more effective manner. Such cooperative synergy with tunable control of interfacial interaction, morphology optimization, and cocatalyst strategy results in the distinctly boosted performance for vis-NIR-driven plasmonic photocatalysis. This work highlights the significance of rationally progressive design of plasmonic metal-semiconductor-based composite system for boosting the regulated directional flow of hot charge carrier and thus the more efficient use of broad-spectrum solar energy conversion. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantum 1/F Noise in Solid State Double Devices, in Particular Hg(1-x) CdxTe Diodes.

DTIC Science & Technology

1986-05-22

1 / f noise , diffusion noise , recombination noise , Hooge formula, Hooge parameter, coherent and...The data will be discussed and interpreted in subsequent sections. f 1 . The Hooge equation and quantum 1 / f noise (A. van der Ziel) According to Hooge [ 1 ...the relative current 1 / f noise of a semiconductor resistor may be written as SI( f ) uH 12 N where uH is the Hooge

Methods for making thin layers of crystalline materials

DOEpatents

Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

2013-07-23

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Study of correlation between overlay and displacement measured by Coherent Gradient Sensing (CGS) interferometry

NASA Astrophysics Data System (ADS)

Mileham, Jeffrey; Tanaka, Yasushi; Anberg, Doug; Owen, David M.; Lee, Byoung-Ho; Bouche, Eric

2016-03-01

Within the semiconductor lithographic process, alignment control is one of the most critical considerations. In order to realize high device performance, semiconductor technology is approaching the 10 nm design rule, which requires progressively smaller overlay budgets. Simultaneously, structures are expanding in the 3rd dimension, thereby increasing the potential for inter-layer distortion. For these reasons, device patterning is becoming increasingly difficult as the portion of the overlay budget attributed to process-induced variation increases. After lithography, overlay gives valuable feedback to the lithography tool; however overlay measurements typically have limited density, especially at the wafer edge, due to throughput considerations. Moreover, since overlay is measured after lithography, it can only react to, but not predict the process-induced overlay. This study is a joint investigation in a high-volume manufacturing environment of the portion of overlay associated with displacement induced by a single process across many chambers. Displacement measurements are measured by Coherent Gradient Sensing (CGS) interferometry, which generates high-density displacement maps (>3 million points on a 300 mm wafer) such that the stresses induced die-by-die and process-by-process can be tracked in detail. The results indicate the relationship between displacement and overlay shows the ability to forecast overlay values before the lithographic process. Details of the correlation including overlay/displacement range, and lot-to-lot displacement variability are considered.

Pixel-based OPC optimization based on conjugate gradients.

PubMed

Ma, Xu; Arce, Gonzalo R

2011-01-31

Optical proximity correction (OPC) methods are resolution enhancement techniques (RET) used extensively in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. In pixel-based OPC (PBOPC), the mask is divided into small pixels, each of which is modified during the optimization process. Two critical issues in PBOPC are the required computational complexity of the optimization process, and the manufacturability of the optimized mask. Most current OPC optimization methods apply the steepest descent (SD) algorithm to improve image fidelity augmented by regularization penalties to reduce the complexity of the mask. Although simple to implement, the SD algorithm converges slowly. The existing regularization penalties, however, fall short in meeting the mask rule check (MRC) requirements often used in semiconductor manufacturing. This paper focuses on developing OPC optimization algorithms based on the conjugate gradient (CG) method which exhibits much faster convergence than the SD algorithm. The imaging formation process is represented by the Fourier series expansion model which approximates the partially coherent system as a sum of coherent systems. In order to obtain more desirable manufacturability properties of the mask pattern, a MRC penalty is proposed to enlarge the linear size of the sub-resolution assistant features (SRAFs), as well as the distances between the SRAFs and the main body of the mask. Finally, a projection method is developed to further reduce the complexity of the optimized mask pattern.

Incoherent population mixing contributions to phase-modulation two-dimensional coherent excitation spectra

NASA Astrophysics Data System (ADS)

Grégoire, Pascal; Srimath Kandada, Ajay Ram; Vella, Eleonora; Tao, Chen; Leonelli, Richard; Silva, Carlos

2017-09-01

We present theoretical and experimental results showing the effects of incoherent population mixing on two-dimensional (2D) coherent excitation spectra that are measured via a time-integrated population and phase-sensitive detection. The technique uses four collinear ultrashort pulses and phase modulation to acquire two-dimensional spectra by isolating specific nonlinear contributions to the photoluminescence or photocurrent excitation signal. We demonstrate that an incoherent contribution to the measured line shape, arising from nonlinear population dynamics over the entire photoexcitation lifetime, generates a similar line shape to the expected 2D coherent spectra in condensed-phase systems. In those systems, photoexcitations are mobile such that inter-particle interactions are important on any time scale, including those long compared with the 2D coherent experiment. Measurements on a semicrystalline polymeric semiconductor film at low temperatures show that, in some conditions in which multi-exciton interactions are suppressed, the technique predominantly detects coherent signals and can be used, in our example, to extract homogeneous line widths. The same method used on a lead-halide perovskite photovoltaic cell shows that incoherent population mixing of mobile photocarriers can dominate the measured signal since carrier-carrier bimolecular scattering is active even at low excitation densities, which hides the coherent contribution to the spectral line shape. In this example, the intensity dependence of the signal matches the theoretical predictions over more than two orders of magnitude, confirming the incoherent nature of the signal. While these effects are typically not significant in dilute solution environments, we demonstrate the necessity to characterize, in condensed-phase materials systems, the extent of nonlinear population dynamics of photoexcitations (excitons, charge carriers, etc.) in the execution of this powerful population-detected coherent spectroscopy technique.

Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics

NASA Astrophysics Data System (ADS)

Tisdale, William A., III

Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots. A TR-SHG study of these electronically-coupled quantum-dot films reveals temperature-activated cooling of hot charge carriers and coherent excitation of a previously-unidentified surface optical phonon. Finally, I report the first experimental observation of ultrafast electron transfer from the higher excited states of a colloidal quantum dot (PbSe) to delocalized conduction band states of a widely-used electron acceptor (TiO2). The electric field resulting from ultrafast (<50fs) separation of charge carriers across the PbSe/TiO2(110) interface excites coherent vibration of the TiO2 surface atoms, whose collective motions can be followed in real time.

Design considerations of 10 kW-scale extreme ultraviolet SASE FEL for lithography

NASA Astrophysics Data System (ADS)

Pagani, C.; Saldin, E. L.; Schneidmiller, E. A.; Yurkov, M. V.

2001-05-01

The semiconductor industry growth is driven to a large extent by steady advancements in microlithography. According to the newly updated industry roadmap, the 70 nm generation is anticipated to be available in the year 2008. However, the path to get there is not obvious. The problem of construction of Extreme Ultraviolet (EUV) quantum laser for lithography is still unsolved: progress in this field is rather moderate and we cannot expect a significant break through in the near future. Nevertheless, there is clear path for optical lithography to take us to sub- 100 nm dimensions. Theoretical and experimental work in free electron laser (FEL) and accelerator physics and technology over the last 10 years has pointed to the possibility of generation of high-power optical beams with laser-like characteristics in the EUV spectral range. Recently, there have been important advances in demonstrating a high-gain self-amplified spontaneous emission (SASE) FEL at 100 nm wavelength (Andruszkov et al., Phys. Rev. Lett. 85 (2000), 3825). In the SASE FEL powerful, coherent radiation is produced by the electron beam during single-pass of the undulator, thus there are no apparent limitations which would prevent operation at very short wavelength range and to increase the average output power of this device up to 10 kW level. The use of superconducting energy-recovery linac could produce a major, cost-effective facility with wall plug power to output optical power efficiency of about 1%. A 10-kW-scale transversely coherent radiation source with narrow bandwidth (0.5%) and variable wavelength could be an excellent tool for manufacturing computer chips with the minimum feature size below 100 nm. All components of the proposed SASE FEL equipment (injector, driver accelerator structure, energy-recovery system, undulator, etc.) have been demonstrated in practice. This is guaranteed success in the time schedule requirement.

Tritium-field betacells

NASA Astrophysics Data System (ADS)

Walko, R. J.; Lincoln, R. C.; Baca, W. E.; Goods, S. H.; Negley, G. H.

Betavoltaic power sources operate by converting the nuclear decay energy of beta-emitting radioisotopes into electricity. Since they are not chemically driven, they could operate at temperatures which would either be too hot or too cold for typical chemical batteries. Further, for long lived isotopes, they offer the possibility of multi-decade active lifetimes. Two approaches are being investigated: direct and indirect conversion. Direct conversion cells consist of semiconductor diodes similar to photovoltaic cells. Beta particle directly bombard these cells, generating electron-hole pairs in the semiconductor which are converted to useful power. When using low power flux beta emitters, wide bandgap semiconductors are required to achieve useful conversion efficiencies. The combination of tritium, as the beta emitter, and gallium phosphide (GaP), as the semiconductor converter, was evaluated. Indirect conversion betacells first convert the beta energy to light with a phosphor, and then to electricity with photovoltaic cells. An indirect conversion power source using a tritium radioluminescent (RL) light is being investigated. Our analysis indicates that this approach has the potential for significant volume and cost savings over the direct conversion method.

An integrated semiconductor device enabling non-optical genome sequencing.

PubMed

Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

2011-07-20

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

Strain-engineered growth of two-dimensional materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Geun Ho; Amani, Matin; Rasool, Haider

The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here in this paper, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe 2 as a model system, we demonstrate stable built-in strains ranging from 1%more » tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe 2, respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.« less

Strain-engineered growth of two-dimensional materials

DOE PAGES

Ahn, Geun Ho; Amani, Matin; Rasool, Haider; ...

2017-09-20

The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here in this paper, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe 2 as a model system, we demonstrate stable built-in strains ranging from 1%more » tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe 2, respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.« less

Optically controlled locking of the nuclear field via coherent dark-state spectroscopy.

PubMed

Xu, Xiaodong; Yao, Wang; Sun, Bo; Steel, Duncan G; Bracker, Allan S; Gammon, Daniel; Sham, L J

2009-06-25

A single electron or hole spin trapped inside a semiconductor quantum dot forms the foundation for many proposed quantum logic devices. In group III-V materials, the resonance and coherence between two ground states of the single spin are inevitably affected by the lattice nuclear spins through the hyperfine interaction, while the dynamics of the single spin also influence the nuclear environment. Recent efforts have been made to protect the coherence of spins in quantum dots by suppressing the nuclear spin fluctuations. However, coherent control of a single spin in a single dot with simultaneous suppression of the nuclear fluctuations has yet to be achieved. Here we report the suppression of nuclear field fluctuations in a singly charged quantum dot to well below the thermal value, as shown by an enhancement of the single electron spin dephasing time T(2)*, which we measure using coherent dark-state spectroscopy. The suppression of nuclear fluctuations is found to result from a hole-spin assisted dynamic nuclear spin polarization feedback process, where the stable value of the nuclear field is determined only by the laser frequencies at fixed laser powers. This nuclear field locking is further demonstrated in a three-laser measurement, indicating a possible enhancement of the electron spin T(2)* by a factor of several hundred. This is a simple and powerful method of enhancing the electron spin coherence time without use of 'spin echo'-type techniques. We expect that our results will enable the reproducible preparation of the nuclear spin environment for repetitive control and measurement of a single spin with minimal statistical broadening.

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

PubMed Central

2014-01-01

We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

(2+1) -dimensional stable spatial Raman solitons

NASA Astrophysics Data System (ADS)

Shverdin, M. Y.; Yavuz, D. D.; Walker, D. R.

2004-03-01

We analyze the formation, propagation, and interaction of stable two-frequency (2+1) -dimensional solitons, formed in a Raman media driven near maximum molecular coherence. The propagating light is trapped in the two transverse dimensions.

Heterogeneous semiconductor photocatalysts for hydrogen production from aqueous solutions of electron donors

NASA Astrophysics Data System (ADS)

Kozlova, E. A.; Parmon, V. N.

2017-09-01

Current views on heterogeneous photocatalysts for visible- and near-UV-light-driven production of molecular hydrogen from water and aqueous solutions of inorganic and organic electron donors are analyzed and summarized. Main types of such photocatalysts and methods for their preparation are considered. Particular attention is paid to semiconductor photocatalysts based on sulfides that are known to be sensitive to visible light. The known methods for increasing the quantum efficiency of the target process are discussed, including design of the structure, composition and texture of semiconductor photocatalysts and variation of the medium pH and the substrate and photocatalyst concentrations. Some important aspects of the activation and deactivation of sulfide photocatalysts and the evolution of their properties in the course of hydrogen production processes in the presence of various types of electron donors are analyzed. The bibliography includes 276 references.

Modeling the target acquisition performance of active imaging systems

NASA Astrophysics Data System (ADS)

Espinola, Richard L.; Jacobs, Eddie L.; Halford, Carl E.; Vollmerhausen, Richard; Tofsted, David H.

2007-04-01

Recent development of active imaging system technology in the defense and security community have driven the need for a theoretical understanding of its operation and performance in military applications such as target acquisition. In this paper, the modeling of active imaging systems, developed at the U.S. Army RDECOM CERDEC Night Vision & Electronic Sensors Directorate, is presented with particular emphasis on the impact of coherent effects such as speckle and atmospheric scintillation. Experimental results from human perception tests are in good agreement with the model results, validating the modeling of coherent effects as additional noise sources. Example trade studies on the design of a conceptual active imaging system to mitigate deleterious coherent effects are shown.

Modeling the target acquisition performance of active imaging systems.

PubMed

Espinola, Richard L; Jacobs, Eddie L; Halford, Carl E; Vollmerhausen, Richard; Tofsted, David H

2007-04-02

Recent development of active imaging system technology in the defense and security community have driven the need for a theoretical understanding of its operation and performance in military applications such as target acquisition. In this paper, the modeling of active imaging systems, developed at the U.S. Army RDECOM CERDEC Night Vision & Electronic Sensors Directorate, is presented with particular emphasis on the impact of coherent effects such as speckle and atmospheric scintillation. Experimental results from human perception tests are in good agreement with the model results, validating the modeling of coherent effects as additional noise sources. Example trade studies on the design of a conceptual active imaging system to mitigate deleterious coherent effects are shown.

Coherent Raman Studies of Shocked Liquids

NASA Astrophysics Data System (ADS)

McGrane, Shawn; Brown, Kathryn; Dang, Nhan; Bolme, Cynthia; Moore, David

2013-06-01

Transient vibrational spectroscopies offer the potential to directly observe time dependent shock induced chemical reaction kinetics. We report recent experiments that couple a hybrid picosecond/femtosecond coherent anti-Stokes Raman spectroscopy (CARS) diagnostic with our tabletop ultrafast laser driven shock platform. Initial results on liquids shocked to 20 GPa suggest that sub-picosecond dephasing at high pressure and temperature may limit the application of this nonresonant background free version of CARS. Initial results using interferometric CARS to increase sensitivity and overcome these limitations will be presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demidov, V. E.; Dzyapko, O.; Demokritov, S. O.

The room-temperature dynamics of a magnon gas driven by short microwave pumping pulses is studied. An overpopulation of the lowest energy level of the system following the pumping is observed. Using the sensitivity of the Brillouin light scattering technique to the coherence degree of the scattering magnons we demonstrate the spontaneous emergence of coherence of the magnons at the lowest level, if their density exceeds a critical value. This finding is clear proof of the quantum nature of the observed phenomenon and direct evidence of Bose-Einstein condensation of magnons at room temperature.

Superradiance-Driven Phonon Laser

NASA Astrophysics Data System (ADS)

Jiang, Ya-Jing; Lü, Hao; Jing, Hui

2018-04-01

We propose to enhance the generation of a phonon laser by exploiting optical superradiance. In our scheme, the optomechanical cavity contains a movable membrane, which supports a mechanical mode, and the superradiance cavity can generate the coherent collective light emissions by applying a transverse pump to an ultracold intracavity atomic gas. The superradiant emission turns out to be capable of enhancing the phonon laser performance. This indicates a new way to operate a phonon laser with the assistance of coherent atomic gases trapped in a cavity or lattice potentials.

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

NASA Astrophysics Data System (ADS)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-05-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

Research Update: Photoelectrochemical water splitting and photocatalytic hydrogen production using ferrites (MFe2O4) under visible light irradiation

NASA Astrophysics Data System (ADS)

Dillert, Ralf; Taffa, Dereje H.; Wark, Michael; Bredow, Thomas; Bahnemann, Detlef W.

2015-10-01

The utilization of solar light for the photoelectrochemical and photocatalytic production of molecular hydrogen from water is a scientific and technical challenge. Semiconductors with suitable properties to promote solar-driven water splitting are a desideratum. A hitherto rarely investigated group of semiconductors are ferrites with the empirical formula MFe2O4 and related compounds. This contribution summarizes the published results of the experimental investigations on the photoelectrochemical and photocatalytic properties of these compounds. It will be shown that the potential of this group of compounds in regard to the production of solar hydrogen has not been fully explored yet.

Efficient semiconductor multicycle terahertz pulse source

NASA Astrophysics Data System (ADS)

Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

2018-05-01

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

A novel semiconductor-based, fully incoherent amplified spontaneous emission light source for ghost imaging

PubMed Central

Hartmann, Sébastien; Elsäßer, Wolfgang

2017-01-01

Initially, ghost imaging (GI) was demonstrated with entangled light from parametric down conversion. Later, classical light sources were introduced with the development of thermal light GI concepts. State-of-the-art classical GI light sources rely either on complex combinations of coherent light with spatially randomizing optical elements or on incoherent lamps with monochromating optics, however suffering strong losses of efficiency and directionality. Here, a broad-area superluminescent diode is proposed as a new light source for classical ghost imaging. The coherence behavior of this spectrally broadband emitting opto-electronic light source is investigated in detail. An interferometric two-photon detection technique is exploited in order to resolve the ultra-short correlation timescales. We thereby quantify the coherence time, the photon statistics as well as the number of spatial modes unveiling a complete incoherent light behavior. With a one-dimensional proof-of-principle GI experiment, we introduce these compact emitters to the field which could be beneficial for high-speed GI systems as well as for long range GI sensing in future applications. PMID:28150737

The Coherent Interlayer Resistance of a Single, Misoriented Interface between Two Graphite Stacks

NASA Astrophysics Data System (ADS)

Lake, Roger K.; Habib, K. M. Masum; Sylvia, Somaia; Ge, Supeng; Neupane, Mahesh

2014-03-01

The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles ranging from 0° to 27 .29° . The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m Ωμm2 depending on the Fermi energy. For small rotation angles <= 7 .34° , the coherent interlayer resistance exponentially approaches the ideal quantum resistance at energies away from the charge neutrality point. Over a range of intermediate angles, the resistance increases exponentially with primitive cell size for minimum size cells. A change of misorientation angle by one degree can increase the primitive cell size by three orders of magnitude. These large cell sizes may not follow the exponential trend of the minimal cells especially at energies a few hundred meV away from the charge neutrality point. At such energies, their coherent interlayer resistance is likely to coincide with that of a nearby rotation angle with a much smaller primitive cell. The energy dependence of the interlayer transmission is described and analyzed. This work was supported in part by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.

Coherent destruction of tunnelling in laser-graphene interactions

NASA Astrophysics Data System (ADS)

Gagnon, Denis; Fillion-Gourdeau, François; Dumont, Joey; Lefebvre, Catherine; Maclean, Steve

Coherent destruction of tunnelling (CDT) is defined as a critical slow-down of the dynamics of a quantum system that occurs when its adiabatic eigenstates exhibit a close avoided crossing. CDT has been observed in several quantum systems such as semiconductor superlattices, superconducting qubits and molecules in laser fields. In this work, CDT in low-dimensional Dirac materials is described using the viewpoint of Floquet theory. More specifically, the case of photo-excited graphene is considered. Conduction band populations are computed for various combinations of incident laser pulse shapes and polarizations. It is shown that these laser parameters provide control knobs over the phenomenon of CDT in graphene. Specifically, multiphoton peaks in momentum space can be selectively suppressed or enhanced. The potential of experimental techniques such as ARPES for the future observation of CDT in graphene is also discussed.

Simultaneous wavelength and format conversion in SDN/NFV for flexible optical network based on FWM in SOA

NASA Astrophysics Data System (ADS)

Zhan, Yueying; Wang, Danshi; Zhang, Min

2018-04-01

We propose an all-optical wavelength and format conversion model (CM) for a dynamic data center interconnect node and coherent passive optical network (PON) optical network unit (ONU) in software-defined networking and network function virtualization system based on four-wave mixing in a semiconductor optical amplifier. Five wavelength converted DQPSK signals and two format converted DPSK signals are generated; the performances of the generated signals for two strategies of setting CM in the data center interconnect node and coherent PON ONU, which are over 10 km fiber transmission, have been verified. All of the converted signals are with a power penalty less than 2.2 dB at FEC threshold of 3.8 × 10 - 3, and the optimum bias current of SOA is 300 mA.

Real-time and sub-wavelength ultrafast coherent diffraction imaging in the extreme ultraviolet.

PubMed

Zürch, M; Rothhardt, J; Hädrich, S; Demmler, S; Krebs, M; Limpert, J; Tünnermann, A; Guggenmos, A; Kleineberg, U; Spielmann, C

2014-12-08

Coherent Diffraction Imaging is a technique to study matter with nanometer-scale spatial resolution based on coherent illumination of the sample with hard X-ray, soft X-ray or extreme ultraviolet light delivered from synchrotrons or more recently X-ray Free-Electron Lasers. This robust technique simultaneously allows quantitative amplitude and phase contrast imaging. Laser-driven high harmonic generation XUV-sources allow table-top realizations. However, the low conversion efficiency of lab-based sources imposes either a large scale laser system or long exposure times, preventing many applications. Here we present a lensless imaging experiment combining a high numerical aperture (NA = 0.8) setup with a high average power fibre laser driven high harmonic source. The high flux and narrow-band harmonic line at 33.2 nm enables either sub-wavelength spatial resolution close to the Abbe limit (Δr = 0.8λ) for long exposure time, or sub-70 nm imaging in less than one second. The unprecedented high spatial resolution, compactness of the setup together with the real-time capability paves the way for a plethora of applications in fundamental and life sciences.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Layton, E.; Huang, Y.; Chu, S.

We show that cyclic quantum evolution can be realized and the Aharonov-Anandan (AA) geometric phase can be determined for any spin-{ital j} system driven by periodic fields. Two methods are extended for the study of this problem: the generalized spin-coherent-state technique and the Floquet quasienergy approach. Using the former approach, we have developed a {ital generalized} Bloch-sphere model and presented a SU(2) Lie-group formulation of the AA geometric phase in the spin-coherent state. We show that the AA phase is equal to {ital j} times the solid angle enclosed by the trajectory traced out by the tip of a generalizedmore » Bloch vector. General analytic formulas are obtained for the Bloch vector trajectory and the AA geometric phase in terms of external physical parameters. In addition to these findings, we have also approached the same problem from an alternative but complementary point of view without recourse to the concept of coherent-state terminology. Here we first determine the Floquet quasienergy eigenvalues and eigenvectors for the spin-{ital j} system driven by periodic fields. This in turn allows the construction of the time-evolution propagator, the total wave function, and the AA geometric phase in a more general fashion.« less

Assembly of mesoscale helices with near-unity enantiomeric excess and light-matter interactions for chiral semiconductors

PubMed Central

Feng, Wenchun; Kim, Ji-Young; Wang, Xinzhi; Calcaterra, Heather A.; Qu, Zhibei; Meshi, Louisa; Kotov, Nicholas A.

2017-01-01

Semiconductors with chiral geometries at the nanoscale and mesoscale provide a rich materials platform for polarization optics, photocatalysis, and biomimetics. Unlike metallic and organic optical materials, the relationship between the geometry of chiral semiconductors and their chiroptical properties remains, however, vague. Homochiral ensembles of semiconductor helices with defined geometries open the road to understanding complex relationships between geometrical parameters and chiroptical properties of semiconductor materials. We show that semiconductor helices can be prepared with an absolute yield of ca 0.1% and an enantiomeric excess (e.e.) of 98% or above from cysteine-stabilized cadmium telluride nanoparticles (CdTe NPs) dispersed in methanol. This high e.e. for a spontaneously occurring chemical process is attributed to chiral self-sorting based on the thermodynamic preference of NPs to assemble with those of the same handedness. The dispersions of homochiral self-assembled helices display broadband visible and near-infrared (Vis-NIR) polarization rotation with anisotropy (g) factors approaching 0.01. Calculated circular dichroism (CD) spectra accurately reproduced experimental CD spectra and gave experimentally validated spectral predictions for different geometrical parameters enabling de novo design of chiroptical semiconductor materials. Unlike metallic, ceramic, and polymeric helices that serve predominantly as scatterers, chiroptical properties of semiconductor helices have nearly equal contribution of light absorption and scattering, which is essential for device-oriented, field-driven light modulation. Deconstruction of a helix into a series of nanorods provides a simple model for the light-matter interaction and chiroptical activity of helices. This study creates a framework for further development of polarization-based optics toward biomedical applications, telecommunications, and hyperspectral imaging. PMID:28275728

Transverse Coherence Limited Coherent Diffraction Imaging using a Molybdenum Soft X-ray Laser Pumped at Moderate Pump Energies.

PubMed

Zürch, M; Jung, R; Späth, C; Tümmler, J; Guggenmos, A; Attwood, D; Kleineberg, U; Stiel, H; Spielmann, C

2017-07-13

Coherent diffraction imaging (CDI) in the extreme ultraviolet has become an important tool for nanoscale investigations. Laser-driven high harmonic generation (HHG) sources allow for lab scale applications such as cancer cell classification and phase-resolved surface studies. HHG sources exhibit excellent coherence but limited photon flux due poor conversion efficiency. In contrast, table-top soft X-ray lasers (SXRL) feature excellent temporal coherence and extraordinary high flux at limited transverse coherence. Here, the performance of a SXRL pumped at moderate pump energies is evaluated for CDI and compared to a HHG source. For CDI, a lower bound for the required mutual coherence factor of |μ 12 | ≥ 0.75 is found by comparing a reconstruction with fixed support to a conventional characterization using double slits. A comparison of the captured diffraction signals suggests that SXRLs have the potential for imaging micron scale objects with sub-20 nm resolution in orders of magnitude shorter integration time compared to a conventional HHG source. Here, the low transverse coherence diameter limits the resolution to approximately 180 nm. The extraordinary high photon flux per laser shot, scalability towards higher repetition rate and capability of seeding with a high harmonic source opens a route for higher performance nanoscale imaging systems based on SXRLs.

Heterodyne photomixer spectrometer with receiver photomixer driven at different frequency than source photomixer

DOEpatents

Wanke, Michael C; Fortier, Kevin; Shaner, Eric A; Barrick, Todd A

2013-07-09

A heterodyne photomixer spectrometer comprises a receiver photomixer that is driven at a different frequency than the source photomixer, thereby maintaining the coherent nature of the detection, eliminating etalon effects, and providing not only the amplitude but also the phase of the received signal. The heterodyne technique can be applied where the source and receiver elements are components of a waveguide thereby forming an on-chip heterodyne spectrometer.

Exploring synchrotron radiation capabilities: The ALS-Intel CRADA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gozzo, F.; Cossy-Favre, A; Trippleet, B.

1997-04-01

Synchrotron radiation spectroscopy and spectromicroscopy were applied, at the Advanced Light Source, to the analysis of materials and problems of interest to the commercial semiconductor industry. The authors discuss some of the results obtained at the ALS using existing capabilities, in particular the small spot ultra-ESCA instrument on beamline 7.0 and the AMS (Applied Material Science) endstation on beamline 9.3.2. The continuing trend towards smaller feature size and increased performance for semiconductor components has driven the semiconductor industry to invest in the development of sophisticated and complex instrumentation for the characterization of microstructures. Among the crucial milestones established by themore » Semiconductor Industry Association are the needs for high quality, defect free and extremely clean silicon wafers, very thin gate oxides, lithographies near 0.1 micron and advanced material interconnect structures. The requirements of future generations cannot be met with current industrial technologies. The purpose of the ALS-Intel CRADA (Cooperative Research And Development Agreement) is to explore, compare and improve the utility of synchrotron-based techniques for practical analysis of substrates of interest to semiconductor chip manufacturing. The first phase of the CRADA project consisted in exploring existing ALS capabilities and techniques on some problems of interest. Some of the preliminary results obtained on Intel samples are discussed here.« less

Effect of transverse nonuniformity of the rf field on the efficiency of microwave sources driven by linear electron beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nusinovich, G.S.; Sinitsyn, O.V.

This paper contains a simple analytical theory that allows one to evaluate the effect of transverse nonuniformity of the rf field on the interaction efficiency in various microwave sources driven by linear electron beams. The theory is, first, applied to the systems where the beams of cylindrical symmetry interact with rf fields of microwave circuits having Cartesian geometry. Also, various kinds of microwave devices driven by sheet electron beams (orotrons, clinotrons) are considered. The theory can be used for evaluating the efficiency of novel sources of coherent terahertz radiation.

Twist of generalized skyrmions and spin vortices in a polariton superfluid

PubMed Central

Donati, Stefano; Dominici, Lorenzo; Dagvadorj, Galbadrakh; Ballarini, Dario; De Giorgi, Milena; Bramati, Alberto; Gigli, Giuseppe; Rubo, Yuri G.; Szymańska, Marzena Hanna; Sanvitto, Daniele

2016-01-01

We study the spin vortices and skyrmions coherently imprinted into an exciton–polariton condensate on a planar semiconductor microcavity. We demonstrate that the presence of a polarization anisotropy can induce a complex dynamics of these structured topologies, leading to the twist of their circuitation on the Poincaré sphere of polarizations. The theoretical description of the results carries the concept of generalized quantum vortices in two-component superfluids, which are conformal with polarization loops around an arbitrary axis in the pseudospin space. PMID:27965393

Proceedings of the Conference on Emerging Technologies in Optical Sciences (ETOS 2004) held at University College Cork, Ireland on July 26-29, 2004

DTIC Science & Technology

2004-07-29

coherent coupling in large element arrays . 16 Characterisation of Picosecond Pulses Propagating through a Semiconductor Optical Amplifier...Effect is used. QSCE is widely used in optical intensity and phase modula- Oiz et • to tors [i]. The speed of reverse-biased devices is po- tentially...such devices generally have poor beam quality . The out-of- phase mode is In fact typically favoured in these devices because of the better

Bright solitons in non-equilibrium coherent quantum matter

PubMed Central

Pinsker, F.; Flayac, H.

2016-01-01

We theoretically demonstrate a mechanism for bright soliton generation in spinor non-equilibrium Bose–Einstein condensates made of atoms or quasi-particles such as polaritons in semiconductor microcavities. We give analytical expressions for bright (half) solitons as minimizing functions of a generalized non-conservative Lagrangian elucidating the unique features of inter and intra-competition in non-equilibrium systems. The analytical results are supported by a detailed numerical analysis that further shows the rich soliton dynamics inferred by their instability and mutual cross-interactions. PMID:26997892

Twist of generalized skyrmions and spin vortices in a polariton superfluid.

PubMed

Donati, Stefano; Dominici, Lorenzo; Dagvadorj, Galbadrakh; Ballarini, Dario; De Giorgi, Milena; Bramati, Alberto; Gigli, Giuseppe; Rubo, Yuri G; Szymańska, Marzena Hanna; Sanvitto, Daniele

2016-12-27

We study the spin vortices and skyrmions coherently imprinted into an exciton-polariton condensate on a planar semiconductor microcavity. We demonstrate that the presence of a polarization anisotropy can induce a complex dynamics of these structured topologies, leading to the twist of their circuitation on the Poincaré sphere of polarizations. The theoretical description of the results carries the concept of generalized quantum vortices in two-component superfluids, which are conformal with polarization loops around an arbitrary axis in the pseudospin space.

Resonant features of the terahertz generation in semiconductor nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trukhin, V. N., E-mail: valera.truchin@mail.ioffe.ru; Bouravleuv, A. D.; Mustafin, I. A.

2016-12-15

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

Speckle Free, Low Coherency, High Brightness, and High Pulse Speed Infrared Collimated Light Sources for Mid-IR Target Designator and Hyperspectral Imaging

DTIC Science & Technology

2007-10-31

designator and hyperspectral imaging 6. AUfHOR(S) Yee-LoyLam 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION DenseLight...DenseLight Semiconductors CONTENTS 1. Introduction 3 1.1 Overview of Project 3 1.2 Organization of Project 4 1.3 Target...Performance 4 2. SLED Chip Design and Fabrication Development 5 2.1 Organization of Design Stages 5 2.2 SLED Chip Design 6 2.3

A new coupling mechanism between two graphene electron waveguides for ultrafast switching

NASA Astrophysics Data System (ADS)

Huang, Wei; Liang, Shi-Jun; Kyoseva, Elica; Ang, Lay Kee

2018-03-01

In this paper, we report a novel coupling between two graphene electron waveguides, in analogy the optical waveguides. The design is based on the coherent quantum mechanical tunneling of Rabi oscillation between the two graphene electron waveguides. Based on this coupling mechanism, we propose that it can be used as an ultrafast electronic switching device. Based on a modified coupled mode theory, we construct a theoretical model to analyze the device characteristics, and predict that the switching speed is faster than 1 ps and the on-off ratio exceeds 106. Due to the long mean free path of electrons in graphene at room temperature, the proposed design avoids the limitation of low temperature operation required in the traditional design by using semiconductor quantum-well structure. The layout of our design is similar to that of a standard complementary metal-oxide-semiconductor transistor that should be readily fabricated with current state-of-art nanotechnology.

Injection Locking of a Semiconductor Double Quantum Dot Micromaser

PubMed Central

Liu, Y.-Y.; Stehlik, J.; Gullans, M. J.; Taylor, J. M.; Petta, J. R.

2016-01-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models. PMID:28127226

Injection Locking of a Semiconductor Double Quantum Dot Micromaser.

PubMed

Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R

2015-11-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.

Mapping carrier diffusion in single silicon core-shell nanowires with ultrafast optical microscopy.

PubMed

Seo, M A; Yoo, J; Dayeh, S A; Picraux, S T; Taylor, A J; Prasankumar, R P

2012-12-12

Recent success in the fabrication of axial and radial core-shell heterostructures, composed of one or more layers with different properties, on semiconductor nanowires (NWs) has enabled greater control of NW-based device operation for various applications. (1-3) However, further progress toward significant performance enhancements in a given application is hindered by the limited knowledge of carrier dynamics in these structures. In particular, the strong influence of interfaces between different layers in NWs on transport makes it especially important to understand carrier dynamics in these quasi-one-dimensional systems. Here, we use ultrafast optical microscopy (4) to directly examine carrier relaxation and diffusion in single silicon core-only and Si/SiO(2) core-shell NWs with high temporal and spatial resolution in a noncontact manner. This enables us to reveal strong coherent phonon oscillations and experimentally map electron and hole diffusion currents in individual semiconductor NWs for the first time.

Electrical transport engineering of semiconductor superlattice structures

NASA Astrophysics Data System (ADS)

Shokri, Aliasghar

2014-04-01

We investigate the influence of doping concentration on band structures of electrons and electrical transmission in a typical aperiodic semiconductor superlattice consisting of quantum well and barrier layers, theoretically. For this purpose, we assume that each unit cell of the superlattice contains alternately two types of material GaAs (as a well) and GaAlAs (as a barrier) with six sublayers of two materials. Our calculations are based on the generalized Kronig-Penny (KP) model and the transfer matrix method within the framework of the parabolic conductance band effective mass approximation in the coherent regime. This model reduces the numerical calculation time and enables us to use the transfer matrix method to investigate transport in the superlattices. We show that by varying the doping concentration and geometrical parameters, one can easily block the transmission of the electrons. The numerical results may be useful in designing of nanoenergy filter devices.

Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device

PubMed Central

Heywood, Sarah L.; Glavin, Boris A.; Beardsley, Ryan P.; Akimov, Andrey V.; Carr, Michael W.; Norman, James; Norton, Philip C.; Prime, Brian; Priestley, Nigel; Kent, Anthony J.

2016-01-01

We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1–12 GHz range. The mixing process preserves all the spectral content in the acoustic signal that falls within the intermediate frequency bandwidth. Therefore this technique may find application in high-frequency acoustic spectroscopy measurements, exploiting the nanometre wavelength of sub-THz sound. The result also points the way to exploiting acoustoelectric effects in photonic devices working at sub-THz and THz frequencies, which could provide functionalities at these frequencies, e.g. acoustic wave filtering, that are currently in widespread use at lower (GHz) frequencies. PMID:27477841

Optically pumped coherent mechanical oscillators: the laser rate equation theory and experimental verification

NASA Astrophysics Data System (ADS)

Khurgin, J. B.; Pruessner, M. W.; Stievater, T. H.; Rabinovich, W. S.

2012-10-01

We develop a theory describing the operation of an opto-mechanical oscillator as a phonon laser using a set of coupled equations that is analogous to the standard set of laser rate equations. We show that laser-like parameters that characterize gain, stored energy, threshold, efficiency, oscillation frequency linewidth, and saturation power can be introduced for an opto-mechanical oscillator driven by photo-thermal or radiation pressure forces. We then apply the theoretical model to the experimental results for photo-thermally driven oscillations in a Si waveguide opto-mechanical resonator and show good agreement between the theory and experiments. We also consider the microscopic mechanism that transforms the energy of incoherent thermal phonons into coherent oscillations of a single phonon mode and show remarkable parallels with the three-wave parametric interactions in optics and also with opto-electronic oscillators used in microwave photonics.

Compensating effect of the coherent synchrotron radiation in bunch compressors

NASA Astrophysics Data System (ADS)

Jing, Yichao; Hao, Yue; Litvinenko, Vladimir N.

2013-06-01

Typical bunch compression for a high-gain free-electron laser (FEL) requires a large compression ratio. Frequently, this compression is distributed in multiple stages along the beam transport line. However, for a high-gain FEL driven by an energy recovery linac (ERL), compression must be accomplished in a single strong compressor located at the beam line’s end; otherwise the electron beam would be affected severely by coherent synchrotron radiation (CSR) in the ERL’s arcs. In such a scheme, the CSR originating from the strong compressors could greatly degrade the quality of the electron beam. In this paper, we present our design for a bunch compressor that will limit the effect of CSR on the e-beam’s quality. We discuss our findings from a study of such a compressor, and detail its potential for an FEL driven by a multipass ERL developed for the electron-Relativistic Heavy Ion Collider.

Coherent perfect absorption in a quantum nonlinear regime of cavity quantum electrodynamics

NASA Astrophysics Data System (ADS)

Wei, Yang-hua; Gu, Wen-ju; Yang, Guoqing; Zhu, Yifu; Li, Gao-xiang

2018-05-01

Coherent perfect absorption (CPA) is investigated in the quantum nonlinear regime of cavity quantum electrodynamics (CQED), in which a single two-level atom couples to a single-mode cavity weakly driven by two identical laser fields. In the strong-coupling regime and due to the photon blockade effect, the weakly driven CQED system can be described as a quantum system with three polariton states. CPA is achieved at a critical input field strength when the frequency of the input fields matches the polariton transition frequency. In the quantum nonlinear regime, the incoherent dissipation processes such as atomic and photon decays place a lower bound for the purity of the intracavity quantum field. Our results show that under the CPA condition, the intracavity field always exhibits the quadrature squeezing property manifested by the quantum nonlinearity, and the outgoing photon flux displays the super-Poissonian distribution.

Self-Organized Dynamic Flocking Behavior from a Simple Deterministic Map

NASA Astrophysics Data System (ADS)

Krueger, Wesley

2007-10-01

Coherent motion exhibiting large-scale order, such as flocking, swarming, and schooling behavior in animals, can arise from simple rules applied to an initial random array of self-driven particles. We present a completely deterministic dynamic map that exhibits emergent, collective, complex motion for a group of particles. Each individual particle is driven with a constant speed in two dimensions adopting the average direction of a fixed set of non-spatially related partners. In addition, the particle changes direction by π as it reaches a circular boundary. The dynamical patterns arising from these rules range from simple circular-type convective motion to highly sophisticated, complex, collective behavior which can be easily interpreted as flocking, schooling, or swarming depending on the chosen parameters. We present the results as a series of short movies and we also explore possible order parameters and correlation functions capable of quantifying the resulting coherence.

Ultrafast transmission electron microscopy using a laser-driven field emitter: Femtosecond resolution with a high coherence electron beam.

PubMed

Feist, Armin; Bach, Nora; Rubiano da Silva, Nara; Danz, Thomas; Möller, Marcel; Priebe, Katharina E; Domröse, Till; Gatzmann, J Gregor; Rost, Stefan; Schauss, Jakob; Strauch, Stefanie; Bormann, Reiner; Sivis, Murat; Schäfer, Sascha; Ropers, Claus

2017-05-01

We present the development of the first ultrafast transmission electron microscope (UTEM) driven by localized photoemission from a field emitter cathode. We describe the implementation of the instrument, the photoemitter concept and the quantitative electron beam parameters achieved. Establishing a new source for ultrafast TEM, the Göttingen UTEM employs nano-localized linear photoemission from a Schottky emitter, which enables operation with freely tunable temporal structure, from continuous wave to femtosecond pulsed mode. Using this emission mechanism, we achieve record pulse properties in ultrafast electron microscopy of 9Å focused beam diameter, 200fs pulse duration and 0.6eV energy width. We illustrate the possibility to conduct ultrafast imaging, diffraction, holography and spectroscopy with this instrument and also discuss opportunities to harness quantum coherent interactions between intense laser fields and free-electron beams. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Phonon-Mediated Exciton Stark Effect Enhanced by a Static Electric Field

NASA Astrophysics Data System (ADS)

Ivanov, A. L.

1997-03-01

The optical properties of semiconductor QW's change in the presence of coherent pump light. The exciton (phonon-mediated, biexciton-mediated, etc.) optical Stark effect is an effective shift of the exciton level that follow dynamically the intensity I0 ~= 0.1 div 1 GW/cm^2 of the pump light. In the present work we develop a theory of a low-intensity electric-field enhanced phonon-mediated optical Stark effect in polar semiconductors and semiconductor microstructures. The main point is that the exciton - LO-phonon Fröhlich interaction can be strongly enhanced by a (quasi-) static electric field F which polarizes the exciton in the geometry F | k | p, where k and p are the wavevectors of the pump and probe light, respectively. The electric field enhancement of spontaneous Raman scattering has been already analyzed (E. Burstein et al., 1971). Even a moderate electric field F ~= 10^3 V/cm reduces the intensity of the pump light to I0 ~= 1 div 10 MW/cm^2. Moreover, the phonon-mediated Stark effect enhanced by a static electric field F allow us to realize the both red and blue dynamical shifts of the exciton level.

Phase mismatched optical parametric generation in semiconductor magnetoplasma

NASA Astrophysics Data System (ADS)

Dubey, Swati; Ghosh, S.; Jain, Kamal

2017-05-01

Optical parametric generation involves the interaction of pump, signal, and idler waves satisfying law of conservation of energy. Phase mismatch parameter plays important role for the spatial distribution of the field along the medium. In this paper instead of exactly matching wave vector, a small mismatch is admitted with a degree of phase velocity mismatch between these waves. Hence the medium must possess certain finite coherence length. This wave mixing process is well explained by coupled mode theory and one dimensional hydrodynamic model. Based on this scheme, expressions for threshold pump field and transmitted intensity have been derived. It is observed that the threshold pump intensity and transmitted intensity can be manipulated by varying doping concentration and magnetic field under phase mismatched condition. A compound semiconductor crystal of n-InSb is assumed to be shined at 77 K by a 10.6μm CO2 laser with photon energy well below band gap energy of the crystal, so that only free charge carrier influence the optical properties of the medium for the I.R. parametric generation in a semiconductor plasma medium. Favorable parameters were explored to incite the said process keeping in mind the cost effectiveness and conversion efficiency of the process.

Intrinsic errors in transporting a single-spin qubit through a double quantum dot

NASA Astrophysics Data System (ADS)

Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.

2017-07-01

Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.

Modeling of Optoelectronic Devices

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Woo, Alex C. (Technical Monitor)

2000-01-01

Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

Quantum cascade lasers (QCL) for active hyperspectral imaging

NASA Astrophysics Data System (ADS)

Yang, Quankui; Fuchs, Frank; Wagner, Joachim

2014-04-01

There is an increasing demand for wavelength agile laser sources covering the mid-infrared (MIR, 3.5-12 µm) wavelength range, among others in active imaging. The MIR range comprises a particularly interesting part of the electromagnetic spectrum for active hyperspectral imaging applications, due to the fact that the characteristic `fingerprint' absorption spectra of many chemical compounds lie in that range. Conventional semiconductor diode laser technology runs out of steam at such long wavelengths. For many applications, MIR coherent light sources based on solid state lasers in combination with optical parametric oscillators are too complex and thus bulky and expensive. In contrast, quantum cascade lasers (QCLs) constitute a class of very compact and robust semiconductor-based lasers, which are able to cover the mentioned wavelength range using the same semiconductor material system. In this tutorial, a brief review will be given on the state-of-the-art of QCL technology. Special emphasis will be addressed on QCL variants with well-defined spectral properties and spectral tunability. As an example for the use of wavelength agile QCL for active hyperspectral imaging, stand-off detection of explosives based on imaging backscattering laser spectroscopy will be discussed.

Investigating molecule-semiconductor interfaces with nonlinear spectroscopies

NASA Astrophysics Data System (ADS)

Giokas, Paul George

Knowledge of electronic structures and transport mechanisms at molecule-semiconductor interfaces is motivated by their ubiquity in photoelectrochemical cells. In this dissertation, optical spectroscopies are used uncover the influence of electronic coupling, coherent vibrational motion, and molecular geometry, and other factors on dynamics initiated by light absorption at such interfaces. These are explored for a family of ruthenium bipyridyl chromophores bound to titanium dioxide. Transient absorption measurements show molecular singlet state electron injection in 100 fs or less. Resonance Raman intensity analysis suggests the electronic excitations possess very little charge transfer character. The connections drawn in this work between molecular structure and photophysical behavior contribute to the general understanding of photoelectrochemical cells. Knowledge of binding geometry in nanocrystalline films is challenged by heterogeneity of semiconductor surfaces. Polarized resonance Raman spectroscopy is used to characterize the ruthenium chromophore family on single crystal titanium dioxide . Chromophores display a broad distribution of molecular geometries at the interface, with increased variation in binding angle due to the presence of a methylene bridge, as well as additional phosphonate anchors. This result implies multiple binding configurations for chromophores which incorporate multiple phosphonate ligands, and indicates the need for careful consideration when developing surface-assembled chromophore-catalyst cells. Electron transfer transitions occurring on the 100 fs time scale challenge conventional second-order approximations made when modeling these reactions. A fourth-order perturbative model which includes the relationship between coincident electron transfer and nuclear relaxation processes is presented. Insights provided by the model are illustrated for a two-level donor molecule. The presented fourth-order rate formula constitutes a rigorous and intuitive framework for understanding sub-picosecond photoinduced electron transfer dynamics. Charge transfer systems fit by this model include catechol-sensitized titanium dioxide nanoparticles and a closely-related molecular complex. These systems exhibit vibrational coherence coincident with back-electron transfer in the first picosecond after excitation, which suggests that intramolecular nuclear motion strongly influences the electronic transfer process and plays an important role in the dynamics of interfacial systems following light absorption.

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Woo, Alex C. (Technical Monitor)

1999-01-01

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

Nonlinear pulse propagation in InAs/InP quantum dot optical amplifiers: Rabi oscillations in the presence of nonresonant nonlinearities

NASA Astrophysics Data System (ADS)

Karni, O.; Mishra, A. K.; Eisenstein, G.; Reithmaier, J. P.

2015-03-01

We study the interplay between coherent light-matter interactions and nonresonant pulse propagation effects when ultrashort pulses propagate in room-temperature quantum dot (QD) semiconductor optical amplifiers (SOAs). The signatures observed on a pulse envelope after propagating in a transparent SOA, when coherent Rabi oscillations are absent, highlight the contribution of two-photon absorption (TPA), and its accompanying Kerr-like effect, as well as of linear dispersion, to the modification of the pulse complex electric field profile. These effects are incorporated into our previously developed finite-difference time-domain comprehensive model that describes the interaction between the pulses and the QD SOA. The present generalized model is used to investigate the combined effect of coherent and nonresonant phenomena in the gain and absorption regimes of the QD SOA. It confirms that in the QD SOA we examined, linear dispersion in the presence of the Kerr-like effect causes pulse compression, which counteracts the pulse peak suppression due to TPA, and also modifies the patterns which the coherent Rabi oscillations imprint on the pulse envelope under both gain and absorption conditions. The inclusion of these effects leads to a better fit with experiments and to a better understanding of the interplay among the various mechanisms so as to be able to better analyze more complex future experiments of coherent light-matter interaction induced by short pulses propagating along an SOA.

Design and Operational Characteristics of the Shuttle Coherent Wind Lidar

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Spiers, Gary D.; Peters, Bruce R.; Li, Ye; Blackwell, Timothy S.; Geary, Joseph M.

1998-01-01

NOAA has identified the measurement of atmospheric wind velocities as one of the key unmet data sets for its next generation of sensing platforms. The merits of coherent lidars for the measurement of atmospheric winds from space platforms have been widely recognized; however, it is only recently that several key technologies have advanced to a point where a compact, high fidelity system could be created. Advances have been made in the areas of the diode-pumped, eye-safe, solid state lasers and room temperature, wide bandwidth, semiconductor detectors operating in the near-infrared region. These new lasers can be integrated into efficient and compact optical systems creating new possibilities for the development of low-cost, reliable, and compact coherent lidar systems for wind measurements. Over the past five years, the University of Alabama in Huntsville (UAH) has been working toward further advancing the solid state coherent lidar technology for the measurement of atmospheric winds from space. As part of this effort, UAH had established the design characteristics and defined the expected performance for three different proposed space-based instruments: a technology demonstrator, an operational prototype, and a 7-year lifetime operational instrument. SPARCLE is an ambitious project that is intended to evaluate the suitability of coherent lidar for wind measurements, demonstrate the maturity of the technology for space application, and provide a useable data set for model development and validation. This paper describes the SPARCLE instrument's major physical and environmental design constraints, optical and mechanical designs, and its operational characteristics.

From Computational Photobiology to the Design of Vibrationally Coherent Molecular Devices and Motors

NASA Astrophysics Data System (ADS)

Olivucci, Massimo

2014-03-01

In the past multi-configurational quantum chemical computations coupled with molecular mechanics force fields have been employed to investigate spectroscopic, thermal and photochemical properties of visual pigments. Here we show how the same computational technology can nowadays be used to design, characterize and ultimately, prepare light-driven molecular switches which mimics the photophysics of the visual pigment bovine rhodopsin (Rh). When embedded in the protein cavity the chromophore of Rh undergoes an ultrafast and coherent photoisomerization. In order to design a synthetic chromophore displaying similar properties in common solvents, we recently focused on indanylidene-pyrroline (NAIP) systems. We found that these systems display light-induced ground state coherent vibrational motion similar to the one detected in Rh. Semi-classical trajectories provide a mechanistic description of the structural changes associated to the observed coherent motion which is shown to be ultimately due to periodic changes in the π-conjugation.

Coherent Control to Prepare an InAs Quantum Dot for Spin-Photon Entanglement

NASA Astrophysics Data System (ADS)

Webster, L. A.; Truex, K.; Duan, L.-M.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

2014-03-01

We optically generated an electronic state in a single InAs /GaAs self-assembled quantum dot that is a precursor to the deterministic entanglement of the spin of the electron with an emitted photon in the proposal of W. Yao, R.-B. Liu, and L. J. Sham [Phys. Rev. Lett. 95, 030504 (2005).]. A superposition state is prepared by optical pumping to a pure state followed by an initial pulse. By modulating the subsequent pulse arrival times and precisely controlling them using interferometric measurement of path length differences, we are able to implement a coherent control technique to selectively drive exactly one of the two components of the superposition to the ground state. This optical transition contingent on spin was driven with the same broadband pulses that created the superposition through the use of a two pulse coherent control sequence. A final pulse affords measurement of the coherence of this "preentangled" state.

Multiple Spatial Coherence Resonances and Spatial Patterns in a Noise-Driven Heterogeneous Neuronal Network

NASA Astrophysics Data System (ADS)

Li, Yu-Ye; Ding, Xue-Li

2014-12-01

Heterogeneity of the neurons and noise are inevitable in the real neuronal network. In this paper, Gaussian white noise induced spatial patterns including spiral waves and multiple spatial coherence resonances are studied in a network composed of Morris—Lecar neurons with heterogeneity characterized by parameter diversity. The relationship between the resonances and the transitions between ordered spiral waves and disordered spatial patterns are achieved. When parameter diversity is introduced, the maxima of multiple resonances increases first, and then decreases as diversity strength increases, which implies that the coherence degrees induced by noise are enhanced at an intermediate diversity strength. The synchronization degree of spatial patterns including ordered spiral waves and disordered patterns is identified to be a very low level. The results suggest that the nervous system can profit from both heterogeneity and noise, and the multiple spatial coherence resonances are achieved via the emergency of spiral waves instead of synchronization patterns.

Route to Coherent Electronics

NASA Astrophysics Data System (ADS)

Goulielmakis, Eleftherios

2017-04-01

Laser-driven generation of coherent radiation in bulk solids extending up to the extreme ultraviolet part of the spectrum has recently open up completely new possibilities for study of electronic phenomena which lie beyond the scope of standard condensed phase physics spectroscopies. I will present how previous and new tools of attosecond metrology can now allow us to gain detailed insight into the fundamental microscopic processes responsible for the EUV emission in solids. We will show that this emission is in reality a macroscopic probe of nanoscale intraband coherent electric currents the frequency of which is extending into multiPetahertz range. On the basis of these findings, I will try to persuade you that we are now entering the realm of coherent electronics. A regime in which electronic circuitry can be conceived on the atomic level and where electronic properties of materials can be accessed and controlled on attosecond time scales.

Coherent control of plasma dynamics by feedback-optimized wavefront manipulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Z.-H.; Hou, B.; Gao, G.

2015-05-15

Plasmas generated by an intense laser pulse can support coherent structures such as large amplitude wakefield that can affect the outcome of an experiment. We investigate the coherent control of plasma dynamics by feedback-optimized wavefront manipulation using a deformable mirror. The experimental outcome is directly used as feedback in an evolutionary algorithm for optimization of the phase front of the driving laser pulse. In this paper, we applied this method to two different experiments: (i) acceleration of electrons in laser driven plasma waves and (ii) self-compression of optical pulses induced by ionization nonlinearity. The manipulation of the laser wavefront leadsmore » to orders of magnitude improvement to electron beam properties such as the peak charge, beam divergence, and transverse emittance. The demonstration of coherent control for plasmas opens new possibilities for future laser-based accelerators and their applications.« less

Band Gap Distortion in Semiconductors Strongly Driven by Intense Mid-Infrared Laser Fields

NASA Astrophysics Data System (ADS)

Kono, J.; Chin, A. H.

2000-03-01

Crystalline solids non-resonantly driven by intense time-periodic electric fields are predicted to exhibit unusual band-gap distortion.(e.g., Y. Yacoby, Phys. Rev. 169, 610 (1968); L.C.M. Miranda, Solid State Commun. 45, 783 (1983); J.Z. Kaminski, Acta Physica Polonica A 83, 495(1993).) Such non-perturbative effects have not been observed to date because of the unavoidable sample damage due to the very high intensity required using conventional lasers ( 1 eV photon energy). Here, we report the first clear evidence of laser-induced bandgap shrinkage in semiconductors under intense mid-infrared (MIR) laser fields. The use of long-wavelength light reduces the required intensity and prohibits strong interband absorption, thereby avoiding the damage problem. The significant sub-bandgap absorption persists only during the existence of the MIR laser pulse, indicating the virtual nature of the effect. We show that this particular example of non-perturbative behavior, known as the dynamical Franz-Keldysh effect, occurs when the effective ponderomotive potential energy is comparable to the photon energy of the applied field. This work was supported by ONR, NSF, JST and NEDO.

Hybrid quantum-classical modeling of quantum dot devices

NASA Astrophysics Data System (ADS)

Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

2017-11-01

The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

DOE PAGES

El-Atwani, O.; Norris, S. A.; Ludwig, K.; ...

2015-12-16

In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends onmore » several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.« less

Light-driven water oxidation for solar fuels

PubMed Central

Young, Karin J.; Martini, Lauren A.; Milot, Rebecca L.; III, Robert C. Snoeberger; Batista, Victor S.; Schmuttenmaer, Charles A.; Crabtree, Robert H.; Brudvig, Gary W.

2014-01-01

Light-driven water oxidation is an essential step for conversion of sunlight into storable chemical fuels. Fujishima and Honda reported the first example of photoelectrochemical water oxidation in 1972. In their system, TiO2 was irradiated with ultraviolet light, producing oxygen at the anode and hydrogen at a platinum cathode. Inspired by this system, more recent work has focused on functionalizing nanoporous TiO2 or other semiconductor surfaces with molecular adsorbates, including chromophores and catalysts that absorb visible light and generate electricity (i.e., dye-sensitized solar cells) or trigger water oxidation at low overpotentials (i.e., photocatalytic cells). The physics involved in harnessing multiple photochemical events for multielectron reactions, as required in the four-electron water oxidation process, has been the subject of much experimental and computational study. In spite of significant advances with regard to individual components, the development of highly efficient photocatalytic cells for solar water splitting remains an outstanding challenge. This article reviews recent progress in the field with emphasis on water-oxidation photoanodes inspired by the design of functionalized thin film semiconductors of typical dye-sensitized solar cells. PMID:25364029

2 Gbit/s 0.5 μm complementary metal-oxide semiconductor optical transceiver with event-driven dynamic power-on capability

NASA Astrophysics Data System (ADS)

Wang, Xingle; Kiamilev, Fouad; Gui, Ping; Wang, Xiaoqing; Ekman, Jeremy; Zuo, Yongrong; Blankenberg, Jason; Haney, Michael

2006-06-01

A 2 Gb/s0.5 μm complementary metal-oxide semiconductor optical transceiver designed for board- or backplane level power-efficient interconnections is presented. The transceiver supports optical wake-on-link (OWL), an event-driven dynamic power-on technique. Depending on external events, the transceiver resides in either the active mode or the sleep mode and switches accordingly. The active-to-sleep transition shuts off the normal, gigabit link and turns on dedicated circuits to establish a low-power (~1.8 mW), low data rate (less than 100 Mbits/s) link. In contrast the normal, gigabit link consumes over 100 mW. Similarly the sleep-to-active transition shuts off the low-power link and turns on the normal, gigabit link. The low-power link, sharing the same optical channel with the normal, gigabit link, is used to achieve transmitter/receiver pair power-on synchronization and greatly reduces the power consumption of the transceiver. A free-space optical platform was built to evaluate the transceiver performance. The experiment successfully demonstrated the event-driven dynamic power-on operation. To our knowledge, this is the first time a dynamic power-on scheme has been implemented for optical interconnects. The areas of the circuits that implement the low-power link are approximately one-tenth of the areas of the gigabit link circuits.

Effects of Initial Correlation and Quantum Coherence on the Energy Transfer, Purity and Entanglement

NASA Astrophysics Data System (ADS)

Meng, Xiangjia; Chen, Longxi

2018-04-01

We investigate the influences of the initial correlation and quantum coherence on a bipartite dissipative system which is modeled by two two-level quantum emitters driven by an external laser field. It is shown that the initial correlation can enhance or suppress the dynamical evolution of the energy transfer quantified by the excited-state population and the information flow between the two emitters characterized by the purity. We also present the degree of the influence of the initial correlation that is determined by the quantum coherence induced by a relative phase. By introducing Bloch sphere, we illustrate the relation between the energy transfer and the purity. In addition, a scheme for generating maximally entangled steady state is proposed.

Observation of coherent Smith-Purcell and transition radiation driven by single bunch and micro-bunched electron beams

NASA Astrophysics Data System (ADS)

Liang, Yifan; Du, Yingchao; Su, Xiaolu; Wang, Dan; Yan, Lixin; Tian, Qili; Zhou, Zheng; Wang, Dong; Huang, Wenhui; Gai, Wei; Tang, Chuanxiang; Konoplev, I. V.; Zhang, H.; Doucas, G.

2018-01-01

Generation of coherent Smith-Purcell (cSPr) and transition/diffraction radiation using a single bunch or a pre-modulated relativistic electron beam is one of the growing research areas aiming at the development of radiation sources and beam diagnostics for accelerators. We report the results of comparative experimental studies of terahertz radiation generation by an electron bunch and micro-bunched electron beams and the spectral properties of the coherent transition and SP radiation. The properties of cSPr spectra are investigated and discussed, and excitations of the fundamental and second harmonics of cSPr and their dependence on the beam-grating separation are shown. The experimental and theoretical results are compared, and good agreement is demonstrated.

Coherent control in bulk and nanostructure semiconductors

NASA Astrophysics Data System (ADS)

Sipe, John E.; van Driel, Henry M.

1998-04-01

Laser light has been used as a probe of atoms, molecules, and solids since the invention of the laser. The use of laser light in a more active role, to modify and process surfaces, and initiate chemical reactions, followed shortly thereafter. But usually it is the intensity and the directionality of the laser light that is employed, not necessarily its coherence, and not particularly the fact that it has a well-defined phase. 'Coherence control' can be broadly understood as the set of processes whereby light modifies matter in a way that is critically dependent on the incident light beams possessing well-defined phases. While in a laser matter is manipulated to produce light of the desired properties, in coherent control light is manipulated -- in particular, its phase and intensity is adjusted -- to produce a material response of the desired type. Of the various coherent control processes that are currently being investigated, some involve a transition in the material medium from an initial state to a final state by two or more possible processes. With each of these is associated a quantum mechanical amplitude, and hence the probability for the transition can show interference effects between the two amplitudes, just as in the familiar two-slit interference experiment the probability for the electron to be observed at a given position involves a probability that is the square of the sum of two amplitudes. In quantum interference control (QUIC), the relative phase of the two amplitudes is adjusted by adjusting the relative phase of two polarizations of a single beam, or the relative phase of two beams at different frequencies. It is this particular type of coherent control that is of interest in this communication.

Semiconductor quantum well irradiated by a two-mode electromagnetic field as a terahertz emitter

NASA Astrophysics Data System (ADS)

Mandal, S.; Liew, T. C. H.; Kibis, O. V.

2018-04-01

We study theoretically the nonlinear optical properties of a semiconductor quantum well (QW) irradiated by a two-mode electromagnetic wave consisting of a strong resonant dressing field and a weak off-resonant driving field. In the considered strongly coupled electron-field system, the dressing field opens dynamic Stark gaps in the electron energy spectrum of the QW, whereas the driving field induces electron oscillations in the QW plane. Since the gapped electron spectrum restricts the amplitude of the oscillations, the emission of a frequency comb from the QW appears. Therefore, the doubly driven QW operates as a nonlinear optical element which can be used, particularly, for optically controlled generation of terahertz radiation.

Nanoengineering of strong field processes in solids

NASA Astrophysics Data System (ADS)

Almalki, S.; Parks, A. M.; Brabec, T.; McDonald, C. R.

2018-04-01

We present a theoretical investigation of the effect of quantum confinement on high harmonic generation in semiconductor materials by systematically varying the confinement width along one or two directions transverse to the laser polarization. Our analysis shows a growth in high harmonic efficiency concurrent with a reduction of ionization. This decrease in ionization comes as a consequence of an increased band gap resulting from the confinement. The increase in harmonic efficiency results from a restriction of wave packet spreading, leading to greater recollision probability. Consequently, nanoengineering of one and two-dimensional nanosystems may prove to be a viable means to increase harmonic yield and photon energy in semiconductor materials driven by intense laser fields.

Excitons and the lifetime of organic semiconductor devices.

PubMed

Forrest, Stephen R

2015-06-28

While excitons are responsible for the many beneficial optical properties of organic semiconductors, their non-radiative recombination within the material can result in material degradation due to the dumping of energy onto localized molecular bonds. This presents a challenge in developing strategies to exploit the benefits of excitons without negatively impacting the device operational stability. Here, we will briefly review the fundamental mechanisms leading to excitonic energy-driven device ageing in two example devices: blue emitting electrophosphorescent organic light emitting devices (PHOLEDs) and organic photovoltaic (OPV) cells. We describe strategies used to minimize or even eliminate this fundamental device degradation pathway. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

Research Update: Photoelectrochemical water splitting and photocatalytic hydrogen production using ferrites (MFe{sub 2}O{sub 4}) under visible light irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dillert, Ralf; Laboratorium für Nano- und Quantenengineering, Gottfried Wilhelm Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover; Taffa, Dereje H.

2015-10-01

The utilization of solar light for the photoelectrochemical and photocatalytic production of molecular hydrogen from water is a scientific and technical challenge. Semiconductors with suitable properties to promote solar-driven water splitting are a desideratum. A hitherto rarely investigated group of semiconductors are ferrites with the empirical formula MFe{sub 2}O{sub 4} and related compounds. This contribution summarizes the published results of the experimental investigations on the photoelectrochemical and photocatalytic properties of these compounds. It will be shown that the potential of this group of compounds in regard to the production of solar hydrogen has not been fully explored yet.

An exciton-polariton laser based on biologically produced fluorescent protein

PubMed Central

Dietrich, Christof P.; Steude, Anja; Tropf, Laura; Schubert, Marcel; Kronenberg, Nils M.; Ostermann, Kai; Höfling, Sven; Gather, Malte C.

2016-01-01

Under adequate conditions, cavity polaritons form a macroscopic coherent quantum state, known as polariton condensate. Compared to Wannier-Mott excitons in inorganic semiconductors, the localized Frenkel excitons in organic emitter materials show weaker interaction with each other but stronger coupling to light, which recently enabled the first realization of a polariton condensate at room temperature. However, this required ultrafast optical pumping, which limits the applications of organic polariton condensates. We demonstrate room temperature polariton condensates of cavity polaritons in simple laminated microcavities filled with biologically produced enhanced green fluorescent protein (eGFP). The unique molecular structure of eGFP prevents exciton annihilation even at high excitation densities, thus facilitating polariton condensation under conventional nanosecond pumping. Condensation is clearly evidenced by a distinct threshold, an interaction-induced blueshift of the condensate, long-range coherence, and the presence of a second threshold at higher excitation density that is associated with the onset of photon lasing. PMID:27551686

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pereyra, Pedro, E-mail: pereyrapedro@gmail.com; Mendoza-Figueroa, M. G.

Transport properties of electrons through biased double barrier semiconductor structures with finite transverse width w{sub y}, in the presence of a channel-mixing transverse electric field E{sub T} (along the y-axis), were studied. We solve the multichannel Schrödinger equation using the transfer matrix method and transport properties, like the conductance G and the transmission coefficients T{sub ij} have been evaluated as functions of the electrons' energy E and the transverse and longitudinal (bias) electric forces, f{sub T} and f{sub b}. We show that peak-suppression effects appear, due to the applied bias. Similarly, coherent interference of wave-guide states induced by the transversemore » field is obtained. We show also that the coherent interference of resonant wave-guide states gives rise to resonant conductance, which can be tuned to produce broad resonant peaks, implying operation frequencies of the order of 10 THz or larger.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a 31P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show thatmore » the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.« less

Protocol for generating multiphoton entangled states from quantum dots in the presence of nuclear spin fluctuations

NASA Astrophysics Data System (ADS)

Denning, Emil V.; Iles-Smith, Jake; McCutcheon, Dara P. S.; Mork, Jesper

2017-12-01

Multiphoton entangled states are a crucial resource for many applications in quantum information science. Semiconductor quantum dots offer a promising route to generate such states by mediating photon-photon correlations via a confined electron spin, but dephasing caused by the host nuclear spin environment typically limits coherence (and hence entanglement) between photons to the spin T2* time of a few nanoseconds. We propose a protocol for the deterministic generation of multiphoton entangled states that is inherently robust against the dominating slow nuclear spin environment fluctuations, meaning that coherence and entanglement is instead limited only by the much longer spin T2 time of microseconds. Unlike previous protocols, the present scheme allows for the generation of very low error probability polarization encoded three-photon GHZ states and larger entangled states, without the need for spin echo or nuclear spin calming techniques.

Coherent communication link using diode-pumped lasers

NASA Technical Reports Server (NTRS)

Kane, Thomas J.; Wallace, Richard W.

1989-01-01

Work toward developing a diffraction limited, single frequency, modulated transmitter suitable for coherent optical communication or direct detection communication is discussed. Diode pumped, monolithic Nd:YAG nonplanar ring oscillators were used as the carrier beam. An external modulation technique which can handle high optical powers, has moderate modulation voltage, and which can reach modulation rates of 1 GHz was invented. Semiconductor laser pumped solid-state lasers which have high output power (0.5 Watt) and which oscillate at a single frequency, in a diffraction limited beam, at the wavelength of 1.06 microns were built. A technique for phase modulating the laser output by 180 degrees with a 40-volt peak to peak driving voltage is demonstrated. This technique can be adapted for amplitude modulation of 100 percent with the same voltage. This technique makes use of a resonant bulk modulator, so it does not have the power handling limitations of guided wave modulators.

Coherent dynamics of a telecom-wavelength entangled photon source.

PubMed

Ward, M B; Dean, M C; Stevenson, R M; Bennett, A J; Ellis, D J P; Cooper, K; Farrer, I; Nicoll, C A; Ritchie, D A; Shields, A J

2014-01-01

Quantum networks can interconnect remote quantum information processors, allowing interaction between different architectures and increasing net computational power. Fibre-optic telecommunications technology offers a practical platform for routing weakly interacting photonic qubits, allowing quantum correlations and entanglement to be established between distant nodes. Although entangled photons have been produced at telecommunications wavelengths using spontaneous parametric downconversion in nonlinear media, as system complexity increases their inherent excess photon generation will become limiting. Here we demonstrate entangled photon pair generation from a semiconductor quantum dot at a telecommunications wavelength. Emitted photons are intrinsically anti-bunched and violate Bell's inequality by 17 standard deviations High-visibility oscillations of the biphoton polarization reveal the time evolution of the emitted state with exceptional clarity, exposing long coherence times. Furthermore, we introduce a method to evaluate the fidelity to a time-evolving Bell state, revealing entanglement between photons emitted up to 5 ns apart, exceeding the exciton lifetime.

Phase seeding of a terahertz quantum cascade laser

PubMed Central

Oustinov, Dimitri; Jukam, Nathan; Rungsawang, Rakchanok; Madéo, Julien; Barbieri, Stefano; Filloux, Pascal; Sirtori, Carlo; Marcadet, Xavier; Tignon, Jérôme; Dhillon, Sukhdeep

2010-01-01

The amplification of spontaneous emission is used to initiate laser action. As the phase of spontaneous emission is random, the phase of the coherent laser emission (the carrier phase) will also be random each time laser action begins. This prevents phase-resolved detection of the laser field. Here, we demonstrate how the carrier phase can be fixed in a semiconductor laser: a quantum cascade laser (QCL). This is performed by injection seeding a QCL with coherent terahertz pulses, which forces laser action to start on a fixed phase. This permits the emitted laser field to be synchronously sampled with a femtosecond laser beam, and measured in the time domain. We observe the phase-resolved buildup of the laser field, which can give insights into the laser dynamics. In addition, as the electric field oscillations are directly measured in the time domain, QCLs can now be used as sources for time-domain spectroscopy. PMID:20842195

Coherent X-Ray Diffraction Imaging and Characterization of Strain in Silicon-on-Insulator Nanostructures

PubMed Central

Xiong, Gang; Moutanabbir, Oussama; Reiche, Manfred; Harder, Ross; Robinson, Ian

2014-01-01

Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. We will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices. PMID:24955950

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Brebrick, R. F.; Burger, A.; Dudley, M.; Ramachandran, N.

2003-01-01

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions.

Laser-driven shock experiments on precompressed water: Implications for "icy" giant planets.

PubMed

Lee, Kanani K M; Benedetti, L Robin; Jeanloz, Raymond; Celliers, Peter M; Eggert, Jon H; Hicks, Damien G; Moon, Stephen J; Mackinnon, Andrew; Da Silva, Luis B; Bradley, David K; Unites, Walter; Collins, Gilbert W; Henry, Emeric; Koenig, Michel; Benuzzi-Mounaix, Alessandra; Pasley, John; Neely, David

2006-07-07

Laser-driven shock compression of samples precompressed to 1 GPa produces high-pressure-temperature conditions inducing two significant changes in the optical properties of water: the onset of opacity followed by enhanced reflectivity in the initially transparent water. The onset of reflectivity at infrared wavelengths can be interpreted as a semiconductor<-->electronic conductor transition in water, and is found at pressures above approximately 130 GPa for single-shocked samples precompressed to 1 GPa. Our results indicate that conductivity in the deep interior of "icy" giant planets is greater than realized previously because of an additional contribution from electrons.

A Two Micron Coherent Differential Absorption Lidar Development

NASA Technical Reports Server (NTRS)

Yu, Jirong; Petros, Mulugeta; Chen, Songsheng; Bai, Yingxin; Petzar, Paul J.; Trieu, Bo C.; Koch, Grady J.; Beyon, Jeffrey Y.; VanValkenburg, Randal L.; Kavaya, Michael J.;

Coherent Active-Sterile Neutrino Flavor Transformation in the Early Universe

NASA Astrophysics Data System (ADS)

Kishimoto, Chad T.; Fuller, George M.; Smith, Christel J.

2006-10-01

We solve the problem of coherent Mikheyev-Smirnov-Wolfenstein resonant active-to-sterile neutrino flavor conversion driven by an initial lepton number in the early Universe. We find incomplete destruction of the lepton number in this process and a sterile neutrino energy distribution with a distinctive cusp and high energy tail. These features imply alteration of the nonzero lepton number primordial nucleosynthesis paradigm when there exist sterile neutrinos with rest masses ms˜1eV. This could result in better light element probes of (constraints on) these particles.

Coherent active-sterile neutrino flavor transformation in the early universe.

PubMed

Kishimoto, Chad T; Fuller, George M; Smith, Christel J

2006-10-06

We solve the problem of coherent Mikheyev-Smirnov-Wolfenstein resonant active-to-sterile neutrino flavor conversion driven by an initial lepton number in the early Universe. We find incomplete destruction of the lepton number in this process and a sterile neutrino energy distribution with a distinctive cusp and high energy tail. These features imply alteration of the nonzero lepton number primordial nucleosynthesis paradigm when there exist sterile neutrinos with rest masses m(s) approximately 1 eV. This could result in better light element probes of (constraints on) these particles.

Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

PubMed

Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

2012-09-01

In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

Entanglement and Metrology with Singlet-Triplet Qubits

NASA Astrophysics Data System (ADS)

Shulman, Michael Dean

Electron spins confined in semiconductor quantum dots are emerging as a promising system to study quantum information science and to perform sensitive metrology. Their weak interaction with the environment leads to long coherence times and robust storage for quantum information, and the intrinsic tunability of semiconductors allows for controllable operations, initialization, and readout of their quantum state. These spin qubits are also promising candidates for the building block for a scalable quantum information processor due to their prospects for scalability and miniaturization. However, several obstacles limit the performance of quantum information experiments in these systems. For example, the weak coupling to the environment makes inter-qubit operations challenging, and a fluctuating nuclear magnetic field limits the performance of single-qubit operations. The focus of this thesis will be several experiments which address some of the outstanding problems in semiconductor spin qubits, in particular, singlet-triplet (S-T0) qubits. We use these qubits to probe both the electric field and magnetic field noise that limit the performance of these qubits. The magnetic noise bath is probed with high bandwidth and precision using novel techniques borrowed from the field of Hamiltonian learning, which are effective due to the rapid control and readout available in S-T 0 qubits. These findings allow us to effectively undo the undesired effects of the fluctuating nuclear magnetic field by tracking them in real-time, and we demonstrate a 30-fold improvement in the coherence time T2*. We probe the voltage noise environment of the qubit using coherent qubit oscillations, which is partially enabled by control of the nuclear magnetic field. We find that the voltage noise bath is frequency-dependent, even at frequencies as high as 1MHz, and it shows surprising and, as of yet, unexplained temperature dependence. We leverage this knowledge of the voltage noise environment, the nuclear magnetic field control, as well as new techniques for calibrated measurement of the density matrix in a singlet-triplet qubit to entangle two adjacent single-triplet qubits. We fully characterize the generated entangled states and prove that they are, indeed, entangled. This work opens new opportunities to use qubits as sensors for improved metrological capabilities, as well as for improved quantum information processing. The singlet-triplet qubit is unique in that it can be used to probe two fundamentally different noise baths, which are important for a large variety of solid state qubits. More specifically, this work establishes the singlet-triplet qubit as a viable candidate for the building block of a scalable quantum information processor.

Patterning roadmap: 2017 prospects

NASA Astrophysics Data System (ADS)

Neisser, Mark

2017-06-01

Road mapping of semiconductor chips has been underway for over 20 years, first with the International Technology Roadmap for Semiconductors (ITRS) roadmap and now with the International Roadmap for Devices and Systems (IRDS) roadmap. The original roadmap was mostly driven bottom up and was developed to ensure that the large numbers of semiconductor producers and suppliers had good information to base their research and development on. The current roadmap is generated more top-down, where the customers of semiconductor chips anticipate what will be needed in the future and the roadmap projects what will be needed to fulfill that demand. The More Moore section of the roadmap projects that advanced logic will drive higher-resolution patterning, rather than memory chips. Potential solutions for patterning future logic nodes can be derived as extensions of `next-generation' patterning technologies currently under development. Advanced patterning has made great progress, and two `next-generation' patterning technologies, EUV and nanoimprint lithography, have potential to be in production as early as 2018. The potential adoption of two different next-generation patterning technologies suggests that patterning technology is becoming more specialized. This is good for the industry in that it lowers overall costs, but may lead to slower progress in extending any one patterning technology in the future.

Single photon sources with single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

3D Band Diagram and Photoexcitation of 2D-3D Semiconductor Heterojunctions.

PubMed

Li, Bo; Shi, Gang; Lei, Sidong; He, Yongmin; Gao, Weilu; Gong, Yongji; Ye, Gonglan; Zhou, Wu; Keyshar, Kunttal; Hao, Ji; Dong, Pei; Ge, Liehui; Lou, Jun; Kono, Junichiro; Vajtai, Robert; Ajayan, Pulickel M

2015-09-09

The emergence of a rich variety of two-dimensional (2D) layered semiconductor materials has enabled the creation of atomically thin heterojunction devices. Junctions between atomically thin 2D layers and 3D bulk semiconductors can lead to junctions that are fundamentally electronically different from the covalently bonded conventional semiconductor junctions. Here we propose a new 3D band diagram for the heterojunction formed between n-type monolayer MoS2 and p-type Si, in which the conduction and valence band-edges of the MoS2 monolayer are drawn for both stacked and in-plane directions. This new band diagram helps visualize the flow of charge carriers inside the device in a 3D manner. Our detailed wavelength-dependent photocurrent measurements fully support the diagrams and unambiguously show that the band alignment is type I for this 2D-3D heterojunction. Photogenerated electron-hole pairs in the atomically thin monolayer are separated and driven by an external bias and control the "on/off" states of the junction photodetector device. Two photoresponse regimes with fast and slow relaxation are also revealed in time-resolved photocurrent measurements, suggesting the important role played by charge trap states.

Depth dependence of wind-driven, broadband ambient noise in the Philippine Sea.

PubMed

Barclay, David R; Buckingham, Michael J

2013-01-01

In 2009, as part of PhilSea09, the instrument platform known as Deep Sound was deployed in the Philippine Sea, descending under gravity to a depth of 6000 m, where it released a drop weight, allowing buoyancy to return it to the surface. On the descent and ascent, at a speed of 0.6 m/s, Deep Sound continuously recorded broadband ambient noise on two vertically aligned hydrophones separated by 0.5 m. For frequencies between 1 and 10 kHz, essentially all the noise was found to be downward traveling, exhibiting a depth-independent directional density function having the simple form cos θ, where θ ≤ 90° is the polar angle measured from the zenith. The spatial coherence and cross-spectral density of the noise show no change in character in the vicinity of the critical depth, consistent with a local, wind-driven surface-source distribution. The coherence function accurately matches that predicted by a simple model of deep-water, wind-generated noise, provided that the theoretical coherence is evaluated using the local sound speed. A straightforward inversion procedure is introduced for recovering the sound speed profile from the cross-correlation function of the noise, returning sound speeds with a root-mean-square error relative to an independently measured profile of 8.2 m/s.

Long axial imaging range using conventional swept source lasers in optical coherence tomography via re-circulation loops

NASA Astrophysics Data System (ADS)

Bradu, Adrian; Jackson, David A.; Podoleanu, Adrian

2018-03-01

Typically, swept source optical coherence tomography (SS-OCT) imaging instruments are capable of a longer axial range than their camera based (CB) counterpart. However, there are still various applications that would take advantage for an extended axial range. In this paper, we propose an interferometer configuration that can be used to extend the axial range of the OCT instruments equipped with conventional swept-source lasers up to a few cm. In this configuration, the two arms of the interferometer are equipped with adjustable optical path length rings. The use of semiconductor optical amplifiers in the two rings allows for compensating optical losses hence, multiple paths depth reflectivity profiles (Ascans) can be combined axially. In this way, extremely long overall axial ranges are possible. The use of the recirculation loops produces an effect equivalent to that of extending the coherence length of the swept source laser. Using this approach, the achievable axial imaging range in SS-OCT can reach values well beyond the limit imposed by the coherence length of the laser, to exceed in principle many centimeters. In the present work, we demonstrate axial ranges exceeding 4 cm using a commercial swept source laser and reaching 6 cm using an "in-house" swept source laser. When used in a conventional set-up alone, both these lasers can provide less than a few mm axial range.

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

PubMed

Guan, Hang; Novack, Ari; Galfsky, Tal; Ma, Yangjin; Fathololoumi, Saeed; Horth, Alexandre; Huynh, Tam N; Roman, Jose; Shi, Ruizhi; Caverley, Michael; Liu, Yang; Baehr-Jones, Thomas; Bergman, Keren; Hochberg, Michael

2018-04-02

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si 3 N 4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

Nonuniform Liouville transformers for quasi-homogeneous optical fields. Final technical report, September 25, 1989--January 22, 1993

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jannson, T.

1993-03-01

During the last two decades, there have been dramatic improvements in the development of optical sources. Examples of this development range from semiconductor laser diodes to free electron beam lasers and synchrotron radiation. Before these developments, standards for the measurement of basic optical parameters (quantities) were less demanding. Now, however, there is a fundamental need for new, reliable methods for providing fast quantitative results for a very broad variety of optical systems and sources. This is particularly true for partially coherent optical beams, since all optical sources are either fully or partially spatially coherent (including Lambertian sources). Until now, theremore » has been no satisfactory solution to this problem. During the last two decades, however, the foundations of physical radiometry have been developed by Walther, Wolf and co-workers. By integrating physical optics, statistical optics and conventional radiometry, this body of work provides necessary tools for the evaluation of radiometric quantities for partially coherent optical beams propagating through optical systems. In this program, Physical Optics Corporation (POC) demonstrated the viability of such a radiometric approach for the specific case of generalized energy concentrators called Liouville transformers. We believe that this radiometric approach is necessary to fully characterize any type of optical system since it takes into account the partial coherence of radiation. 90 refs., 57 figs., 4 tabs.« less

FAST TRACK COMMUNICATION: Quantum anomalies and linear response theory

NASA Astrophysics Data System (ADS)

Sela, Itamar; Aisenberg, James; Kottos, Tsampikos; Cohen, Doron

2010-08-01

The analysis of diffusive energy spreading in quantized chaotic driven systems leads to a universal paradigm for the emergence of a quantum anomaly. In the classical approximation, a driven chaotic system exhibits stochastic-like diffusion in energy space with a coefficient D that is proportional to the intensity ɛ2 of the driving. In the corresponding quantized problem the coherent transitions are characterized by a generalized Wigner time tɛ, and a self-generated (intrinsic) dephasing process leads to nonlinear dependence of D on ɛ2.

Short-scale turbulent fluctuations driven by the electron-temperature gradient in the national spherical torus experiment.

PubMed

Mazzucato, E; Smith, D R; Bell, R E; Kaye, S M; Hosea, J C; LeBlanc, B P; Wilson, J R; Ryan, P M; Domier, C W; Luhmann, N C; Yuh, H; Lee, W; Park, H

2008-08-15

Measurements with coherent scattering of electromagnetic waves in plasmas of the National Spherical Torus Experiment indicate the existence of turbulent fluctuations in the range of wave numbers k perpendicular rho(e)=0.1-0.4, corresponding to a turbulence scale length nearly equal to the collisionless skin depth. Experimental observations and agreement with numerical results from a linear gyrokinetic stability code support the conjecture that the observed turbulence is driven by the electron-temperature gradient.

Control of ultrafast pulses in a hydrogen-filled hollow-core photonic-crystal fiber by Raman coherence

NASA Astrophysics Data System (ADS)

Belli, F.; Abdolvand, A.; Travers, J. C.; Russell, P. St. J.

2018-01-01

We present the results of an experimental and numerical investigation into temporally nonlocal coherent interactions between ultrashort pulses, mediated by Raman coherence, in a gas-filled kagome-style hollow-core photonic-crystal fiber. A pump pulse first sets up the Raman coherence, creating a refractive index spatiotemporal grating in the gas that travels at the group velocity of the pump pulse. Varying the arrival time of a second, probe, pulse allows a high degree of control over its evolution as it propagates along the fiber through the grating. Of particular interest are soliton-driven effects such as self-compression and dispersive wave (DW) emission. In the experiments reported, a DW is emitted at ˜300 nm and exhibits a wiggling effect, with its central frequency oscillating periodically with pump-probe delay. The results demonstrate that a strong Raman coherence, created in a broadband guiding gas-filled kagome photonic-crystal fiber, can be used to control the nonlinear dynamics of ultrashort probe pulses, even in difficult-to-access spectral regions such as the deep and vacuum ultraviolet.

Quantum Dots

NASA Astrophysics Data System (ADS)

Tartakovskii, Alexander

2012-07-01

Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by Lithographic Techniques: III-V Semiconductors and Carbon: 15. Electrically controlling single spin coherence in semiconductor nanostructures Y. Dovzhenko, K. Wang, M. D. Schroer and J. R. Petta; 16. Theory of electron and nuclear spins in III-V semiconductor and carbon-based dots H. Ribeiro and G. Burkard; 17. Graphene quantum dots: transport experiments and local imaging S. Schnez, J. Guettinger, F. Molitor, C. Stampfer, M. Huefner, T. Ihn and K. Ensslin; Part VI. Single Dots for Future Telecommunications Applications: 18. Electrically operated entangled light sources based on quantum dots R. M. Stevenson, A. J. Bennett and A. J. Shields; 19. Deterministic single quantum dot cavities at telecommunication wavelengths D. Dalacu, K. Mnaymneh, J. Lapointe, G. C. Aers, P. J. Poole, R. L. Williams and S. Hughes; Index.

Preface: Special issue featuring papers from the International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

NASA Astrophysics Data System (ADS)

Reggiani, L.; Bordone, P.; Brunetti, R.

2004-02-01

The International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) celebrates 30 years since it first took place in Modena. Nonequilibrium dynamics of charge carriers, pioneered by the hot-electron concept, is an important issue for understanding electro-optic transport properties in semiconductor materials and structures. In these 30 years several topics have matured, and new ones have emerged thus fertilizing the field with a variety of physical problems and new ideas. The history of the conference is summarized in the opening paper `30 years of HCIS'. The future of the conference seems secure considering the continued lively interest of the participants. The conference addressed eleven major topics which constitute the backbone of the proceedings and are summarized as follows: carrier transport in low dimensional and nanostructure systems, nonequilibrium carriers in superlattices and devices, small devices and related phenomena, carrier dynamics and fluctuations, carrier quantum dynamics, coherent/incoherent carrier dynamics of optical excitations and ultra-fast optical phenomena, nonlinear optical effects, transport in organic matter, semiconductor-based spintronics, coherent dynamics in solid state systems for quantum processing and communication, novel materials and devices. Nanometric space scale and femtosecond time scale represent the ultimate domains of theoretical, experimental and practical interest. Traditional fields such as bulk properties, quantum transport, fluctuations and chaotic phenomena, etc, have received thorough and continuous attention. Emerging fields from previous conferences, such as quantum processing and communication, have been better assessed. New fields, such as spintronics and electron transport in organic matter, have appeared for the first time. One plenary talk, 11 invited talks, 230 submitted abstracts covering all these topics constituted a single-session conference. Following scientific selection through the Advisory and Program Committees and peer review, 162 papers were selected for publication by the Institute of Physics Publishing in this special issue of Semiconductor Science and Technology. The financial support that allowed conference organization and helped researchers with budget difficulties to attend came from the following institutions which are gratefully acknowledged: Office of Naval Research (ONR), Defense Advanced Research Project Agency (DARPA), Office of Naval Research International Field Office (ONRIFO), International Union of Pure and Applied Physics (IUPAP), Italian Ministry of Education University and Research (MIUR), National Institute for the Physics of Matter (INFM), University of Modena and Reggio Emilia, Dipartimento di Ingegneria dell’ Innovazione of the Lecce University. Finally, sincere thanks are addressed to the technical staff who provided assistance during the conference: G Angelone, M Benassi, F Grossi, M Leuzzi, A Magnani, S Montanto, L Zagni and D Zanfi. The staff of the University Press Office together with F Goggi and N Minto are acknowledged for their excellent job in printing the conference documents.

Evolution of biofunctional semiconductor nanocrystals: a calorimetric investigation.

PubMed

Ghosh, Debasmita; Mondal, Somrita; Roy, Chandra Nath; Saha, Abhijit

2013-12-14

Semiconductor nanomaterials have found numerous applications in optoelectronic device fabrication and in platforms for drug delivery and hyperthermia cancer treatment, and in various other biomedical fields because of their high photochemical stability and size-tunable photoluminescence (PL). However, little attention has been paid to exploring the energetics of formation of these semiconductor nanoparticles. We demonstrate that formation of nanocrystals with biofunctionalization supported by widely used groups, BSA and cysteine, is an exothermic spontaneous process driven by enthalpy. The whole energetics of the reaction shows that formation of smaller particles is favored with lower synthesis temperature. Further, it is shown that the thermodynamics of nanoparticle formation is strongly influenced by the conformation of the protein matrix. We also demonstrate that protein supported formation of nanocrystals is thermodynamically more favorable compared to that involving smaller organic thiol groups. The favorable enthalpy of formation compensates unfavorable entropy, resulting in favorable Gibbs free energy. Thus, this study can open up new avenues for establishing a thermodynamic basis for the design of nanosystems with new and tunable properties.

Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5

PubMed Central

Lu, Y. F.; Kono, H.; Larkin, T. I.; Rost, A. W.; Takayama, T.; Boris, A. V.; Keimer, B.; Takagi, H.

2017-01-01

The excitonic insulator is a long conjectured correlated electron phase of narrow-gap semiconductors and semimetals, driven by weakly screened electron–hole interactions. Having been proposed more than 50 years ago, conclusive experimental evidence for its existence remains elusive. Ta2NiSe5 is a narrow-gap semiconductor with a small one-electron bandgap EG of <50 meV. Below TC=326 K, a putative excitonic insulator is stabilized. Here we report an optical excitation gap Eop ∼0.16 eV below TC comparable to the estimated exciton binding energy EB. Specific heat measurements show the entropy associated with the transition being consistent with a primarily electronic origin. To further explore this physics, we map the TC–EG phase diagram tuning EG via chemical and physical pressure. The dome-like behaviour around EG∼0 combined with our transport, thermodynamic and optical results are fully consistent with an excitonic insulator phase in Ta2NiSe5. PMID:28205553

Tunable Quantum Dot Solids: Impact of Interparticle Interactions on Bulk Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinclair, Michael B.; Fan, Hongyou; Brener, Igal

2015-09-01

QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. Duringmore » the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.« less

Biomolecule/nanomaterial hybrid systems for nanobiotechnology.

PubMed

Tel-Vered, Ran; Yehezkeli, Omer; Willner, Itamar

2012-01-01

The integration of biomolecules with metallic or semiconductor nanoparticles or carbon nanotubes yields new hybrid nanostructures of unique features that combine the properties of the biomolecules and of the nano-elements. These unique features of the hybrid biomolecule/nanoparticle systems provide the basis for the rapid development of the area of nanobiotechnology. Recent advances in the implementation of hybrid materials consisting of biomolecules and metallic nanoparticles or semiconductor quantum dots will be discussed. The following topics will be exemplified: (i) The electrical wiring of redox enzymes with electrodes by means of metallic nanoparticles or carbon nanotubes, and the application of the modified electrodes as amperometric biosensors or for the construction of biofuel cells. (ii) The biocatalytic growth of metallic nanoparticles as a means to construct optical or electrical sensors. (iii) The functionalization of semiconductor quantum dots with biomolecules and the application of the hybrid nanostructures for developing different optical sensors, including intracellular sensor systems. (iv) The use of biomolecule-metallic nanoparticle nanostructures as templates for growing metallic nanowires, and the construction of fuel-driven nano-transporters.

Silicon quantum processor with robust long-distance qubit couplings.

PubMed

Tosi, Guilherme; Mohiyaddin, Fahd A; Schmitt, Vivien; Tenberg, Stefanie; Rahman, Rajib; Klimeck, Gerhard; Morello, Andrea

2017-09-06

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.Quantum computers will require a large network of coherent qubits, connected in a noise-resilient way. Tosi et al. present a design for a quantum processor based on electron-nuclear spins in silicon, with electrical control and coupling schemes that simplify qubit fabrication and operation.

New trend in electron holography

NASA Astrophysics Data System (ADS)

Tanigaki, Toshiaki; Harada, Ken; Murakami, Yasukazu; Niitsu, Kodai; Akashi, Tetsuya; Takahashi, Yoshio; Sugawara, Akira; Shindo, Daisuke

2016-06-01

Electron holography using a coherent electron wave is a promising technique for high-resolution visualization of electromagnetic fields in and around objects. The capability of electron holography has been enhanced by the development of new technologies and has thus become an even more powerful tool for exploring scientific frontiers. This review introduces these technologies including split-illumination electron holography and vector-field electron tomography. Split-illumination electron holography, which uses separated coherent waves, overcomes the limits imposed by the lateral coherence requirement for electron waves in electron holography. Areas that are difficult to observe using conventional electron holography are now observable. Exemplified applications include observing a singular magnetic domain wall in electrical steel sheets, local magnetizations at anti-phase boundaries, and electrostatic potentials in metal-oxide-semiconductor field-effect transistors. Vector-field electron tomography can be used to visualize magnetic vectors in three dimensions. Two components of the vectors are reconstructed using dual-axis tomography, and the remaining one is calculated using div B   =  0. A high-voltage electron microscope can be used to achieve precise magnetic reconstruction. For example, magnetic vortices have been visualized using a 1 MV holography electron microscope.

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

NASA Astrophysics Data System (ADS)

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; Lagally, Max G.; Foote, Ryan H.; Friesen, Mark; Coppersmith, Susan N.; Eriksson, Mark A.

2016-10-01

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of double quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau-Zener-Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.

Solid-state lasers for coherent communication and remote sensing

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1992-01-01

Semiconductor-diode laser-pumped solid-state lasers have properties that are superior to other lasers for the applications of coherent communication and remote sensing. These properties include efficiency, reliability, stability, and capability to be scaled to higher powers. We have demonstrated that an optical phase-locked loop can be used to lock the frequency of two diode-pumped 1.06 micron Nd:YAG lasers to levels required for coherent communication. Monolithic nonplanar ring oscillators constructed from solid pieces of the laser material provide better than 10 kHz frequency stability over 0.1 sec intervals. We have used active feedback stabilization of the cavity length of these lasers to demonstrate 0.3 Hz frequency stabilization relative to a reference cavity. We have performed experiments and analysis to show that optical parametric oscillators (OPO's) reproduce the frequency stability of the pump laser in outputs that can be tuned to arbitrary wavelengths. Another measurement performed in this program has demonstrated the sub-shot-noise character of correlations of the fluctuations in the twin output of OPO's. Measurements of nonlinear optical coefficients by phase-matched second harmonic generation are helping to resolve inconsistency in these important parameters.

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less

CMOS detector arrays in a virtual 10-kilopixel camera for coherent terahertz real-time imaging.

PubMed

Boppel, Sebastian; Lisauskas, Alvydas; Max, Alexander; Krozer, Viktor; Roskos, Hartmut G

2012-02-15

We demonstrate the principle applicability of antenna-coupled complementary metal oxide semiconductor (CMOS) field-effect transistor arrays as cameras for real-time coherent imaging at 591.4 GHz. By scanning a few detectors across the image plane, we synthesize a focal-plane array of 100×100 pixels with an active area of 20×20 mm2, which is applied to imaging in transmission and reflection geometries. Individual detector pixels exhibit a voltage conversion loss of 24 dB and a noise figure of 41 dB for 16 μW of the local oscillator (LO) drive. For object illumination, we use a radio-frequency (RF) source with 432 μW at 590 GHz. Coherent detection is realized by quasioptical superposition of the image and the LO beam with 247 μW. At an effective frame rate of 17 Hz, we achieve a maximum dynamic range of 30 dB in the center of the image and more than 20 dB within a disk of 18 mm diameter. The system has been used for surface reconstruction resolving a height difference in the μm range.

Radiation-induced melting in coherent X-ray diffractive imaging at the nanoscale

PubMed Central

Ponomarenko, O.; Nikulin, A. Y.; Moser, H. O.; Yang, P.; Sakata, O.

2011-01-01

Coherent X-ray diffraction techniques play an increasingly significant role in the imaging of nanoscale structures, ranging from metallic and semiconductor to biological objects. In material science, X-rays are usually considered to be of a low-destructive nature, but under certain conditions they can cause significant radiation damage and heat loading on the samples. The qualitative literature data concerning the tolerance of nanostructured samples to synchrotron radiation in coherent diffraction imaging experiments are scarce. In this work the experimental evidence of a complete destruction of polymer and gold nanosamples by the synchrotron beam is reported in the case of imaging at 1–10 nm spatial resolution. Numerical simulations based on a heat-transfer model demonstrate the high sensitivity of temperature distribution in samples to macroscopic experimental parameters such as the conduction properties of materials, radiation heat transfer and convection. However, for realistic experimental conditions the calculated rates of temperature rise alone cannot explain the melting transitions observed in the nanosamples. Comparison of these results with the literature data allows a specific scenario of the sample destruction in each particular case to be presented, and a strategy for damage reduction to be proposed. PMID:21685675

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

DOE PAGES

Ward, Daniel R.; Kim, Dohun; Savage, Donald E.; ...

2016-10-18

Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of doublemore » quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. Finally, we further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.« less

Tunnel magnetoresistance for coherent spin-flip processes on an interacting quantum dot.

PubMed

Rudziński, W

2009-01-28

Spin-polarized electronic tunneling through a quantum dot coupled to ferromagnetic electrodes is investigated within a nonequilibrium Green function approach. An interplay between coherent intradot spin-flip transitions, tunneling processes and Coulomb correlations on the dot is studied for current-voltage characteristics of the tunneling junction in parallel and antiparallel magnetic configurations of the leads. It is found that due to the spin-flip processes electric current in the antiparallel configuration tends to the current characteristics in the parallel configuration, thus giving rise to suppression of the tunnel magnetoresistance (TMR) between the threshold bias voltages at which the dot energy level becomes active in tunneling. Also, the effect of a negative differential conductance in symmetrical junctions, splitting of the conductance peaks, significant modulation of TMR peaks around the threshold bias voltages as well as suppression of the diode-like behavior in asymmetrical junctions is discussed in the context of coherent intradot spin-flip transitions. It is also shown that TMR may be inverted at selected gate voltages, which qualitatively reproduces the TMR behavior predicted recently for temperatures in the Kondo regime, and observed experimentally beyond the Kondo regime for a semiconductor InAs quantum dot coupled to nickel electrodes.

High-Dimensional Disorder-Driven Phenomena in Weyl Semimetals, Semiconductors, and Related Systems

NASA Astrophysics Data System (ADS)

Syzranov, Sergey V.; Radzihovsky, Leo

2018-03-01

It is commonly believed that a noninteracting disordered electronic system can undergo only the Anderson metal-insulator transition. It has been suggested, however, that a broad class of systems can display disorder-driven transitions distinct from Anderson localization that have manifestations in the disorder-averaged density of states, conductivity, and other observables. Such transitions have received particular attention in the context of recently discovered 3D Weyl and Dirac materials but have also been predicted in cold-atom systems with long-range interactions, quantum kicked rotors, and all sufficiently high-dimensional systems. Moreover, such systems exhibit unconventional behavior of Lifshitz tails, energy-level statistics, and ballistic-transport properties. Here, we review recent progress and the status of results on non-Anderson disorder-driven transitions and related phenomena.

Stability of Buoyancy-Driven Gas Flow: Visualization of Coherent and Incoherent Gas Flow Patterns and Capillary Trapping

NASA Astrophysics Data System (ADS)

Geistlinger, H. W.; Samani, S.; Pohlert, M.; Jia, R.; Lazik, D.

2009-12-01

There are several mechanisms by which the CO2 can be stored: (1) In hydrodynamic trapping, the buoyant CO2 remains as a mobile fluid but is prevented from flowing back to the surface by an impermeable cap rock. (2) In solution trapping, CO2 dissolves into the brine, possibly enhanced by gravity instabilities due to the larger density of the brine-CO2 liquid mixture. (3) In mineral trapping, geochemical binding to the rock due to mineral precipitation. (4) In capillary trapping, the CO2 phase is disconnected into a coherent, mobile phase and an incoherent, immobile (trapped) phase. Recent analytical and numerical investigations [Juanes et al., 2006, 2009; Hesse et al., 2007 ] of buoyant-driven CO2-plume along a sloped aquifer are based on the following conceptual process model: (1) During the injection period, the less wetting CO2 displaces the more wetting brine in a drainage-like process. It is assumed that no capillary trapping occurs and that the CO2-network is coherent and driven both by the injection pressure and the buoyant pressure. Because of this coherence assumption a generalized Darcy-law can be used for the dynamics of the mobile, gaseous CO2-phase. (2) After injection the buoyant CO2 migrates laterally and upward, and water displaces CO2 at the trailing edge of the plume in an imbibition-like process. During this process, there are several physical mechanisms by which the water can displace the CO2 [Lenormand et al., 1983]. In addition to piston-type displacement, core-annular flow (also called: cooperative pore-body filling) may occur, i.e. the wetting phase moves along the walls and under certain conditions the CO2-core flow becomes unstable (snap-off). For water wet rocks, snap-off is the dominant mechanism [Al-Futaisi and Patzek, 2003; Valvatne and Blunt, 2004]. There seems to be consensus that the capillary trapping mechanism has a huge impact on the migration and distribution of CO2 which, in turn, affects the effectiveness of the other sequestration mechanisms. In order to investigate the stability of buoyancy-driven gas flow and the transition between coherent flow, incoherent flow, and their correlation to capillary trapping, we conducted high-resolution optical bench scale experiments. We observed a grain-size (dk) - and flow-rate (Q) dependent transition from incoherent to coherent flow. Based on core-annular flow (= cooperative pore-body filling), we propose a dynamic stability criterion that could describe our experimental results. Our experimental results for vertical gas flow support the experimental results by Lenormand et al. [1983] obtained for horizontal flow, if one takes into account that gravity leads to more unstable flow conditions. Our main results, which are in strong contradiction to the accepted conceptual model of the sloped aquifer, are: (1) Capillary Trapping can already occur during injection and at the front of the plume [Lazik et al., 2008] (2) Gas clusters or bubbles can be mobile (incoherent gas flow) and immobile (capillary trapping), and (3) Incoherent gas flow can not be described by a generalized Darcy law [Geistlinger et al., 2006, 2009].

Robust Population Inversion by Polarization Selective Pulsed Excitation

PubMed Central

Mantei, D.; Förstner, J.; Gordon, S.; Leier, Y. A.; Rai, A. K.; Reuter, D.; Wieck, A. D.; Zrenner, A.

2015-01-01

The coherent state preparation and control of single quantum systems is an important prerequisite for the implementation of functional quantum devices. Prominent examples for such systems are semiconductor quantum dots, which exhibit a fine structure split single exciton state and a V-type three level structure, given by a common ground state and two distinguishable and separately excitable transitions. In this work we introduce a novel concept for the preparation of a robust inversion by the sequential excitation in a V-type system via distinguishable paths. PMID:26000910

Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, M.; Iverson, E. W.; Wang, C. Y.

2015-11-02

For a direct-gap semiconductor (e.g., a p-n junction), photon-assisted tunneling is known to exhibit a high nonlinear absorption. In a transistor laser, as discussed here, the coherent photons generated at the quantum well interact with the collector junction field and “assist” electron tunneling from base to collector, thus resulting in the nonlinear modulation of the laser and the realization of optical pulse generation. 1 and 2 GHz optical pulses are demonstrated in the transistor laser using collector voltage control.

Superconductor Semiconductor Research for NASA's Submillimeter Wavelength Missions

NASA Technical Reports Server (NTRS)

Crowe, Thomas W.

1997-01-01

Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.

Monolithic device for modelocking and stabilization of frequency combs.

PubMed

Lee, C-C; Hayashi, Y; Silverman, K L; Feldman, A; Harvey, T; Mirin, R P; Schibli, T R

2015-12-28

We demonstrate a device that integrates a III-V semiconductor saturable absorber mirror with a graphene electro-optic modulator, which provides a monolithic solution to modelocking and noise suppression in a frequency comb. The device offers a pure loss modulation bandwidth exceeding 5 MHz and only requires a low voltage driver. This hybrid device provides not only compactness and simplicity in laser cavity design, but also small insertion loss, compared to the previous metallic-mirror-based modulators. We believe this work paves the way to portable and fieldable phase-coherent frequency combs.

Fast and slow light property improvement in erbium-doped amplifier

NASA Astrophysics Data System (ADS)

Peng, P. C.; Wu, F. K.; Kao, W. C.; Chen, J.; Lin, C. T.; Chi, S.

2013-01-01

This work experimentally demonstrates improvement of the fast light property in erbium-doped amplifiers at room temperature. The difference between the signal power and the pump power associated with bending loss is used to control the signal power at the different positions of the erbium-doped fiber (EDF) to improve the fast light property. Periodic bending of the EDF increases the time advance of the probe signal by over 288%. Additionally, this concept also could improve the fast light property using coherent population oscillations in semiconductor optical amplifiers.

Investigation of direct integrated optics modulators. [applicable to data preprocessors

NASA Technical Reports Server (NTRS)

Batchman, T. E.

1980-01-01

Direct modulation techniques applicable to integrated optics data preprocessors were investigated. Several methods of modulating a coherent optical beam by interaction with an incoherent beam were studied. It was decided to investigate photon induced conductivity changes in thin semiconductor cladding layers on optical waveguides. Preliminary calculations indicate significant changes can be produced in the phase shift in a propagating wave when the conductivity is changed by ten percent or more. Experimental devices to verify these predicted phase changes and experiments designed to prove the concept are described.

Suppressing relaxation in superconducting qubits by quasiparticle pumping.

PubMed

Gustavsson, Simon; Yan, Fei; Catelani, Gianluigi; Bylander, Jonas; Kamal, Archana; Birenbaum, Jeffrey; Hover, David; Rosenberg, Danna; Samach, Gabriel; Sears, Adam P; Weber, Steven J; Yoder, Jonilyn L; Clarke, John; Kerman, Andrew J; Yoshihara, Fumiki; Nakamura, Yasunobu; Orlando, Terry P; Oliver, William D

2016-12-23

Dynamical error suppression techniques are commonly used to improve coherence in quantum systems. They reduce dephasing errors by applying control pulses designed to reverse erroneous coherent evolution driven by environmental noise. However, such methods cannot correct for irreversible processes such as energy relaxation. We investigate a complementary, stochastic approach to reducing errors: Instead of deterministically reversing the unwanted qubit evolution, we use control pulses to shape the noise environment dynamically. In the context of superconducting qubits, we implement a pumping sequence to reduce the number of unpaired electrons (quasiparticles) in close proximity to the device. A 70% reduction in the quasiparticle density results in a threefold enhancement in qubit relaxation times and a comparable reduction in coherence variability. Copyright © 2016, American Association for the Advancement of Science.

Generating a fractal butterfly Floquet spectrum in a class of driven SU(2) systems

NASA Astrophysics Data System (ADS)

Wang, Jiao; Gong, Jiangbin

2010-02-01

A scheme for generating a fractal butterfly Floquet spectrum, first proposed by Wang and Gong [Phys. Rev. A 77, 031405(R) (2008)], is extended to driven SU(2) systems such as a driven two-mode Bose-Einstein condensate. A class of driven systems without a link with the Harper-model context is shown to have an intriguing butterfly Floquet spectrum. The found butterfly spectrum shows remarkable deviations from the known Hofstadter’s butterfly. In addition, the level crossings between Floquet states of the same parity and between Floquet states of different parities are studied and highlighted. The results are relevant to studies of fractal statistics, quantum chaos, and coherent destruction of tunneling, as well as the validity of mean-field descriptions of Bose-Einstein condensates.

Generating a fractal butterfly Floquet spectrum in a class of driven SU(2) systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Jiao; Temasek Laboratories, National University of Singapore, Singapore 117542; Gong Jiangbin

2010-02-15

A scheme for generating a fractal butterfly Floquet spectrum, first proposed by Wang and Gong [Phys. Rev. A 77, 031405(R) (2008)], is extended to driven SU(2) systems such as a driven two-mode Bose-Einstein condensate. A class of driven systems without a link with the Harper-model context is shown to have an intriguing butterfly Floquet spectrum. The found butterfly spectrum shows remarkable deviations from the known Hofstadter's butterfly. In addition, the level crossings between Floquet states of the same parity and between Floquet states of different parities are studied and highlighted. The results are relevant to studies of fractal statistics, quantummore » chaos, and coherent destruction of tunneling, as well as the validity of mean-field descriptions of Bose-Einstein condensates.« less

Photon-Electron Interactions in Dirac Quantum Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaodong

The objective of this proposal was to explore the fundamental light-matter interactions in a new class of Dirac quantum materials, atomically thin transition metal dichalcogenides (TMDs). Monolayer TMDs are newly discovered two-dimensional semiconductors with direct bandgap. Due to their hexagonal lattice structure, the band edge localizes at corner of Brillouin zone, i.e. “Dirac valleys”. This gives the corresponding electron states a “valley index” (or pseudospin) in addition to the real spin. Remarkably, the valley pseudospins have circularly polarized optical selection rules, providing the first solid state system for dynamic control of the valley degree of freedom. During this award, wemore » have developed a suite of advanced nano-optical spectroscopy tools in the investigation and manipulation of charge, spin, and valley degrees of freedom in monolayer semiconductors. Emerging physical phenomena, such as quantum coherence between valley pseudospins, have been demonstrated for the first time in solids. In addition to monolayers, we have developed a framework in engineering, formulating, and understanding valley pseudospin physics in 2D heterostructures formed by different monolayer semiconductors. We demonstrated long-lived valley-polarized interlayer excitons with valley-dependent many-body interaction effects. These works push the research frontier in understanding the light-matter interactions in atomically-thin quantum materials for protentional transformative energy technologies.« less

Persistent photocurrent (PPC) in solution-processed organic thin film transistors: Mechanisms of gate voltage control

NASA Astrophysics Data System (ADS)

Singh, Subhash; Mohapatra, Y. N.

2016-07-01

There is a growing need to understand mechanisms of photoresponse in devices based on organic semiconductor thin films and interfaces. The phenomenon of persistent photocurrent (PPC) has been systematically investigated in solution processed TIPS-Pentacene based organic thin film transistors (OTFTs) as an important example of an organic semiconductor material system. With increasing light intensity from dark to 385 mW/cm2, there is a significant shift in threshold voltage (VTh) while the filed-effect mobility remains unchanged. The OTFT shows large photoresponse under white light illumination due to exponential tail states with characteristic energy parameter of 86 meV. The photo-induced current is observed to persist even for several hours after turning the light off. To investigate the origin of PPC, its quenching mechanism is investigated by a variety of methods involving a combination of gate bias, illumination and temperature. We show that a coherent model of trap-charge induced carrier concentration is able to account for the quenching behavior. Analysis of isothermal transients using time-analyzed transient spectroscopy shows that the emission rates are activated and are also field enhanced due to Poole-Frankel effect. The results shed light on the nature, origin, and energetic distribution of the traps controlling PPC in solution processed organic semiconductors and their interfaces.

In-vivo gingival sulcus imaging using full-range, complex-conjugate-free, endoscopic spectral domain optical coherence tomography

NASA Astrophysics Data System (ADS)

Huang, Yong; Zhang, Kang; Yi, WonJin; Kang, Jin U.

2012-01-01

Frequent monitoring of gingival sulcus will provide valuable information for judging the presence and severity of periodontal disease. Optical coherence tomography, as a 3D high resolution high speed imaging modality is able to provide information for pocket depth, gum contour, gum texture, gum recession simultaneously. A handheld forward-viewing miniature resonant fiber-scanning probe was developed for in-vivo gingival sulcus imaging. The fiber cantilever driven by magnetic force vibrates at resonant frequency. A synchronized linear phase-modulation was applied in the reference arm by the galvanometer-driven reference mirror. Full-range, complex-conjugate-free, real-time endoscopic SD-OCT was achieved by accelerating the data process using graphics processing unit. Preliminary results showed a real-time in-vivo imaging at 33 fps with an imaging range of lateral 2 mm by depth 3 mm. Gap between the tooth and gum area was clearly visualized. Further quantification analysis of the gingival sulcus will be performed on the image acquired.

Bose-Einstein condensation of spin wave quanta at room temperature.

PubMed

Dzyapko, O; Demidov, V E; Melkov, G A; Demokritov, S O

2011-09-28

Spin waves are delocalized excitations of magnetic media that mainly determine their magnetic dynamics and thermodynamics at temperatures far below the critical one. The quantum-mechanical counterparts of spin waves are magnons, which can be considered as a gas of weakly interacting bosonic quasi-particles. Here, we discuss the room-temperature kinetics and thermodynamics of the magnon gas in yttrium iron garnet films driven by parametric microwave pumping. We show that for high enough pumping powers, the thermalization of the driven gas results in a quasi-equilibrium state described by Bose-Einstein statistics with a non-zero chemical potential. Further increases of the pumping power cause a Bose-Einstein condensation documented by an observation of the magnon accumulation at the lowest energy level. Using the sensitivity of the Brillouin light scattering spectroscopy to the degree of coherence of the scattering magnons, we confirm the spontaneous emergence of coherence of the magnons accumulated at the bottom of the spectrum, occurring if their density exceeds a critical value.

Laser damage mechanisms in conductive widegap semiconductor films

DOE PAGES

Yoo, Jae-Hyuck; Menor, Marlon G.; Adams, John J.; ...

2016-07-25

Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN,more » carbon complexes were proposed as potential damage precursors or markers.« less

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

PubMed

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Multiple Quantum Phase Transitions in a two-dimensional superconductor

NASA Astrophysics Data System (ADS)

Bergeal, Nicolas; Biscaras, J.; Hurand, S.; Feuillet-Palma, C.; Lesueur, J.; Budhani, R. C.; Rastogi, A.; Caprara, S.; Grilli, M.

2013-03-01

We studied the magnetic field driven Quantum Phase Transition (QPT) in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through finite size scaling analysis, we showed that it belongs to the (2 +1)D XY model universality class. The system can be described as a disordered array of superconducting islands coupled by a two dimensional electron gas (2DEG). Depending on the 2DEG conductance tuned by the gate voltage, the QPT is single (corresponding to the long range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). By retrieving the coherence length critical exponent ν, we showed that the QPT can be ``clean'' or ``dirty'' according to the Harris criteria, depending on whether the phase coherence length is smaller or larger than the island size. The overall behaviour is well described by a model of coupled superconducting puddles in the framework of the fermionic scenario of 2D superconducting QPT.

Quantum imaging with incoherently scattered light from a free-electron laser

NASA Astrophysics Data System (ADS)

Schneider, Raimund; Mehringer, Thomas; Mercurio, Giuseppe; Wenthaus, Lukas; Classen, Anton; Brenner, Günter; Gorobtsov, Oleg; Benz, Adrian; Bhatti, Daniel; Bocklage, Lars; Fischer, Birgit; Lazarev, Sergey; Obukhov, Yuri; Schlage, Kai; Skopintsev, Petr; Wagner, Jochen; Waldmann, Felix; Willing, Svenja; Zaluzhnyy, Ivan; Wurth, Wilfried; Vartanyants, Ivan A.; Röhlsberger, Ralf; von Zanthier, Joachim

2018-02-01

The advent of accelerator-driven free-electron lasers (FEL) has opened new avenues for high-resolution structure determination via diffraction methods that go far beyond conventional X-ray crystallography methods. These techniques rely on coherent scattering processes that require the maintenance of first-order coherence of the radiation field throughout the imaging procedure. Here we show that higher-order degrees of coherence, displayed in the intensity correlations of incoherently scattered X-rays from an FEL, can be used to image two-dimensional objects with a spatial resolution close to or even below the Abbe limit. This constitutes a new approach towards structure determination based on incoherent processes, including fluorescence emission or wavefront distortions, generally considered detrimental for imaging applications. Our method is an extension of the landmark intensity correlation measurements of Hanbury Brown and Twiss to higher than second order, paving the way towards determination of structure and dynamics of matter in regimes where coherent imaging methods have intrinsic limitations.

Control of Spin Wave Dynamics in Spatially Twisted Magnetic Structures

DTIC Science & Technology

2017-06-27

realize high-performance spintronic and magnetic storage devices. 15. SUBJECT TERMS nano- electronics , spin, wave, magnetic, multi-functional, device 16... electronics has required us to develop high-performance and multi-functional electronic devices driven with extremely low power consumption...Spintronics”, simultaneously utilizing the charge and the spin of electrons , provides us with solutions to essential problems for semiconductor-based

Nanoscale-driven crystal growth of hexaferrite heterostructures for magnetoelectric tuning of microwave semiconductor integrated devices.

PubMed

Hu, Bolin; Chen, Zhaohui; Su, Zhijuan; Wang, Xian; Daigle, Andrew; Andalib, Parisa; Wolf, Jason; McHenry, Michael E; Chen, Yajie; Harris, Vincent G

2014-11-25

A nanoscale-driven crystal growth of magnetic hexaferrites was successfully demonstrated at low growth temperatures (25-40% lower than the temperatures required often for crystal growth). This outcome exhibits thermodynamic processes of crystal growth, allowing ease in fabrication of advanced multifunctional materials. Most importantly, the crystal growth technique is considered theoretically and experimentally to be universal and suitable for the growth of a wide range of diverse crystals. In the present experiment, the conical spin structure of Co2Y ferrite crystals was found to give rise to an intrinsic magnetoelectric effect. Our experiment reveals a remarkable increase in the conical phase transition temperature by ∼150 K for Co2Y ferrite, compared to 5-10 K of Zn2Y ferrites recently reported. The high quality Co2Y ferrite crystals, having low microwave loss and magnetoelectricity, were successfully grown on a wide bandgap semiconductor GaN. The demonstration of the nanostructure materials-based "system on a wafer" architecture is a critical milestone to next generation microwave integrated systems. It is also practical that future microwave integrated systems and their magnetic performances could be tuned by an electric field because of the magnetoelectricity of hexaferrites.

Superior Valley Polarization and Coherence of 2s Excitons in Monolayer WSe_{2}.

PubMed

Chen, Shao-Yu; Goldstein, Thomas; Tong, Jiayue; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jun

2018-01-26

We report the experimental observation of 2s exciton radiative emission from monolayer tungsten diselenide, enabled by hexagonal boron nitride protected high-quality samples. The 2s luminescence is highly robust and persists up to 150 K, offering a new quantum entity for manipulating the valley degree of freedom. Remarkably, the 2s exciton displays superior valley polarization and coherence than 1s under similar experimental conditions. This observation provides evidence that the Coulomb-exchange-interaction-driven valley-depolarization process, the Maialle-Silva-Sham mechanism, plays an important role in valley excitons of monolayer transition metal dichalcogenides.

Two-Color Coherent Control of Femtosecond Above-Threshold Photoemission from a Tungsten Nanotip.

PubMed

Förster, Michael; Paschen, Timo; Krüger, Michael; Lemell, Christoph; Wachter, Georg; Libisch, Florian; Madlener, Thomas; Burgdörfer, Joachim; Hommelhoff, Peter

2016-11-18

We demonstrate coherent control of multiphoton and above-threshold photoemission from a single solid-state nanoemitter driven by a fundamental and a weak second harmonic laser pulse. Depending on the relative phase of the two pulses, electron emission is modulated with a contrast of the oscillating current signal of up to 94%. Electron spectra reveal that all observed photon orders are affected simultaneously and similarly. We confirm that photoemission takes place within 10 fs. Accompanying simulations indicate that the current modulation with its large contrast results from two interfering quantum pathways leading to electron emission.

Superior Valley Polarization and Coherence of 2 s Excitons in Monolayer WSe2

NASA Astrophysics Data System (ADS)

Chen, Shao-Yu; Goldstein, Thomas; Tong, Jiayue; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jun

2018-01-01

We report the experimental observation of 2 s exciton radiative emission from monolayer tungsten diselenide, enabled by hexagonal boron nitride protected high-quality samples. The 2 s luminescence is highly robust and persists up to 150 K, offering a new quantum entity for manipulating the valley degree of freedom. Remarkably, the 2 s exciton displays superior valley polarization and coherence than 1 s under similar experimental conditions. This observation provides evidence that the Coulomb-exchange-interaction-driven valley-depolarization process, the Maialle-Silva-Sham mechanism, plays an important role in valley excitons of monolayer transition metal dichalcogenides.

Highly anisotropic mobility in solution processed TIPS-pentacene film studied by independently driven four GaIn probes

NASA Astrophysics Data System (ADS)

Yoshimoto, Shinya; Takahashi, Kohtaro; Suzuki, Mitsuharu; Yamada, Hiroko; Miyahara, Ryosuke; Mukai, Kozo; Yoshinobu, Jun

2017-08-01

We have studied in-plane anisotropy in the field-effect mobility of solution-processed organic semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene by using independently driven four gallium indium (Ga-In) probes. Liquid-metal Ga-In probes are highly effective for reproducible conductivity measurements of organic thin films. We demonstrated that a high mobility anisotropy of 44 was obtained by using a square four-probe method and a feedback circuit to keep the channel potential constant. The present method minimized the influences of the contact resistance and the insensitivity of anisotropy in a linear arrangement in two-dimensional field-effect transistors.

Interscale energy transfer in the merger of wakes of a multiscale array of rectangular cylinders

NASA Astrophysics Data System (ADS)

Baj, Pawel; Buxton, Oliver R. H.

2017-11-01

The near wake of a flow past a multiscale array of bars is studied by means of particle image velocimetry (PIV). The aim of this research is to understand the nature of multiscale flows, where multiple coherent motions of nonuniform sizes and characteristic frequencies (i.e., sheddings of particular bars in our considered case) interact with each other. The velocity fields acquired from the experiments are triple decomposed into their mean, a number of coherent fluctuations, and their stochastic part according to a triple decomposition technique introduced recently by Baj et al., Phys. Fluids 27, 075104 (2015), 10.1063/1.4923744. This nonstandard approach allows us to monitor the interactions between different coherent fluctuations representative of sheddings of the particular bars. Further, additional equations governing the kinetic energy of the recognized velocity components are derived to provide better insight into the dynamics of these interactions. Interestingly, apart from the coherent fluctuations associated with sheddings, some additional, secondary coherent fluctuations are also recognized. These seem to appear as a result of nonlinear triadic interactions between the primary shedding modes when the two shedding structures of different characteristic frequencies are in close proximity to one another. The secondary coherent motions are almost exclusively supplied with energy by the primary coherent motions, whereas the latter are driven by the mean flow. It is also found that the coherent fluctuations play an important role in exciting the stochastic fluctuations, as the energy is not fed to the stochastic fluctuations directly from the mean flow but rather through the coherent modes.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

NASA Astrophysics Data System (ADS)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Shell Filling and Magnetic Anisotropy In A Few Hole Silicon Metal-Oxide-Semiconductor Quantum Dot

NASA Astrophysics Data System (ADS)

Hamilton, Alex; Li., R.; Liles, S. D.; Yang, C. H.; Hudson, F. E.; Veldhorst, M. E.; Dzurak, A. S.

There is growing interest in hole spin states in group IV materials for quantum information applications. The near-absence of nuclear spins in group IV crystals promises long spin coherence times, while the strong spin-orbit interaction of the hole states provides fast electrical spin manipulation methods. However, the level-mixing and magnetic field dependence of the p-orbital hole states is non-trivial in nanostructures, and is not as well understood as for electron systems. In this work, we study the hole states in a gate-defined silicon metal-oxide-semiconductor quantum dot. Using an adjacent charge sensor, we monitor quantum dot orbital level spacing down to the very last hole, and find the standard two-dimensional (2D) circular dot shell filling structure. We can change the shell filling sequence by applying an out-of-plane magnetic field. However, when the field is applied in-plane, the shell filling is not changed. This magnetic field anisotropy suggests that the confined hole states are Ising-like.

Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers.

PubMed

Eigenwillig, Christoph M; Wieser, Wolfgang; Todor, Sebastian; Biedermann, Benjamin R; Klein, Thomas; Jirauschek, Christian; Huber, Robert

2013-01-01

Ultrafast lasers have a crucial function in many fields of science; however, up to now, high-energy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of ~60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers

NASA Astrophysics Data System (ADS)

Eigenwillig, Christoph M.; Wieser, Wolfgang; Todor, Sebastian; Biedermann, Benjamin R.; Klein, Thomas; Jirauschek, Christian; Huber, Robert

2013-05-01

Ultrafast lasers have a crucial function in many fields of science; however, up to now, high-energy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of ~60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

Magneto-ballistic transport in GaN nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry

2016-09-05

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuationsmore » and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.« less

Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides

DOE PAGES

Moody, Galan; Dass, Chandriker Kavir; Hao, Kai; ...

2015-09-18

In this paper, the band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions and determines the timescale during which excitons can be coherently manipulated. Here we use optical two-dimensional Fourier transform spectroscopy to measure the exciton homogeneous linewidth in monolayer tungsten diselenide (WSe 2). The homogeneous linewidthmore » is found to be nearly two orders of magnitude narrower than the inhomogeneous width at low temperatures. We evaluate quantitatively the role of exciton–exciton and exciton–phonon interactions and population relaxation as linewidth broadening mechanisms. The key insights reported here—strong many-body effects and intrinsically rapid radiative recombination—are expected to be ubiquitous in atomically thin semiconductors.« less

Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides

PubMed Central

Moody, Galan; Kavir Dass, Chandriker; Hao, Kai; Chen, Chang-Hsiao; Li, Lain-Jong; Singh, Akshay; Tran, Kha; Clark, Genevieve; Xu, Xiaodong; Berghäuser, Gunnar; Malic, Ermin; Knorr, Andreas; Li, Xiaoqin

2015-01-01

The band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions and determines the timescale during which excitons can be coherently manipulated. Here we use optical two-dimensional Fourier transform spectroscopy to measure the exciton homogeneous linewidth in monolayer tungsten diselenide (WSe2). The homogeneous linewidth is found to be nearly two orders of magnitude narrower than the inhomogeneous width at low temperatures. We evaluate quantitatively the role of exciton–exciton and exciton–phonon interactions and population relaxation as linewidth broadening mechanisms. The key insights reported here—strong many-body effects and intrinsically rapid radiative recombination—are expected to be ubiquitous in atomically thin semiconductors. PMID:26382305

High-Performance Computing in Neuroscience for Data-Driven Discovery, Integration, and Dissemination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bouchard, Kristofer E.; Aimone, James B.; Chun, Miyoung

A lack of coherent plans to analyze, manage, and understand data threatens the various opportunities offered by new neuro-technologies. High-performance computing will allow exploratory analysis of massive datasets stored in standardized formats, hosted in open repositories, and integrated with simulations.

High-Performance Computing in Neuroscience for Data-Driven Discovery, Integration, and Dissemination

DOE PAGES

Bouchard, Kristofer E.; Aimone, James B.; Chun, Miyoung; ...

2016-11-01

A lack of coherent plans to analyze, manage, and understand data threatens the various opportunities offered by new neuro-technologies. High-performance computing will allow exploratory analysis of massive datasets stored in standardized formats, hosted in open repositories, and integrated with simulations.

All solid state mid-infrared dual-comb spectroscopy platform based on QCL technology

NASA Astrophysics Data System (ADS)

Hugi, Andreas; Geiser, Markus; Villares, Gustavo; Cappelli, Francesco; Blaser, Stephane; Faist, Jérôme

2015-01-01

We develop a spectroscopy platform for industrial applications based on semiconductor quantum cascade laser (QCL) frequency combs. The platform's key features will be an unmatched combination of bandwidth of 100 cm-1, resolution of 100 kHz, speed of ten to hundreds of μs as well as size and robustness, opening doors to beforehand unreachable markets. The sensor can be built extremely compact and robust since the laser source is an all-electrically pumped semiconductor optical frequency comb and no mechanical elements are required. However, the parallel acquisition of dual-comb spectrometers comes at the price of enormous data-rates. For system scalability, robustness and optical simplicity we use free-running QCL combs. Therefore no complicated optical locking mechanisms are required. To reach high signal-to-noise ratios, we develop an algorithm, which is based on combination of coherent and non-coherent averaging. This algorithm is specifically optimized for free-running and small footprint, therefore high-repetition rate, comb sources. As a consequence, our system generates data-rates of up to 3.2 GB/sec. These data-rates need to be reduced by several orders of magnitude in real-time in order to be useful for spectral fitting algorithms. We present the development of a data-treatment solution, which reaches a single-channel throughput of 22% using a standard laptop-computer. Using a state-of-the art desktop computer, the throughput is increased to 43%. This is combined with a data-acquisition board to a stand-alone data processing unit, allowing real-time industrial process observation and continuous averaging to achieve highest signal fidelity.

Control of electromagnetically induced transparency via a hybrid semiconductor quantum dot-vanadium dioxide nanoparticle system

NASA Astrophysics Data System (ADS)

Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

2017-07-01

We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton-polariton and exciton-plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.

Improving the photocatalytic performance of graphene-TiO2 nanocomposites via a combined strategy of decreasing defects of graphene and increasing interfacial contact.

PubMed

Zhang, Yanhui; Zhang, Nan; Tang, Zi-Rong; Xu, Yi-Jun

2012-07-07

Incessant interest has been shown in the synthesis of graphene (GR)-semiconductor nanocomposites as photocatalysts aiming to utilize the excellent electron conductivity of GR to lengthen the lifetime of photoexcited charge carriers in the semiconductor and, hence, improve the photoactivity. However, research works focused on investigating how to make sufficient use of the unique electron conductivity of GR to design a more efficient GR-semiconductor photocatalyst have been quite lacking. Here, we show a proof-of-concept study on improving the photocatalytic performance of GR-TiO(2) nanocomposites via a combined strategy of decreasing defects of GR and improving the interfacial contact between GR and the semiconductor TiO(2). The GR-TiO(2) nanocomposite fabricated by this approach is able to make more sufficient use of the electron conductivity of GR, by which the lifetime and transfer of photoexcited charge carriers of GR-TiO(2) upon visible light irradiation will be improved more efficiently. This in turn leads to the enhancement of visible-light-driven photoactivity of GR-TiO(2) toward selective transformation of alcohols to corresponding aldehydes using molecular oxygen as a benign oxidant under ambient conditions. It is anticipated that our current work would inform ongoing efforts to exploit the rational design of smart, more efficient GR-semiconductor photocatalysts for conversion of solar to chemical energy by heterogeneous photocatalysis.

Tunable ring laser with internal injection seeding and an optically-driven photonic crystal reflector.

PubMed

Zheng, Jie; Ge, Chun; Wagner, Clark J; Lu, Meng; Cunningham, Brian T; Hewitt, J Darby; Eden, J Gary

2012-06-18

Continuous tuning over a 1.6 THz region in the near-infrared (842.5-848.6 nm) has been achieved with a hybrid ring/external cavity laser having a single, optically-driven grating reflector and gain provided by an injection-seeded semiconductor amplifier. Driven at 532 nm and incorporating a photonic crystal with an azobenzene overlayer, the reflector has a peak reflectivity of ~80% and tunes at the rate of 0.024 nm per mW of incident green power. In a departure from conventional ring or external cavity lasers, the frequency selectivity for this system is provided by the passband of the tunable photonic crystal reflector and line narrowing in a high gain amplifier. Sub - 0.1 nm linewidths and amplifier extraction efficiencies above 97% are observed with the reflector tuned to 842.5 nm.

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

PubMed

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

3D Band Diagram and Photoexcitation of 2D–3D Semiconductor Heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Bo; Shi, Gang; Lei, Sidong

2015-08-17

The emergence of a rich variety of two-dimensional (2D) layered semiconductor materials has enabled the creation of atomically thin heterojunction devices. Junctions between atomically thin 2D layers and 3D bulk semiconductors can lead to junctions that are fundamentally electronically different from the covalently bonded conventional semiconductor junctions. In this paper, we propose a new 3D band diagram for the heterojunction formed between n-type monolayer MoS 2 and p-type Si, in which the conduction and valence band-edges of the MoS 2 monolayer are drawn for both stacked and in-plane directions. This new band diagram helps visualize the flow of charge carriersmore » inside the device in a 3D manner. Our detailed wavelength-dependent photocurrent measurements fully support the diagrams and unambiguously show that the band alignment is type I for this 2D-3D heterojunction. Photogenerated electron–hole pairs in the atomically thin monolayer are separated and driven by an external bias and control the “on/off” states of the junction photodetector device. Finally, two photoresponse regimes with fast and slow relaxation are also revealed in time-resolved photocurrent measurements, suggesting the important role played by charge trap states.« less

Edge simulations in ELMy H-mode discharges of EAST tokamak

NASA Astrophysics Data System (ADS)

Xia, T. Y.; Huang, Y. Q.; Xu, X. Q.; Wu, Y. B.; Wang, L.; Zheng, Z.; Liu, J. B.; Zang, Q.; Li, Y. Y.; Zhao, D.

2017-10-01

Simulations of ELM crash followed by a coherent mode, leading to transient divertor heat flux on EAST are achieved by the six-field two-fluid model in BOUT + + . Three EAST ELMy H-mode discharges with different pedestal structure, geometry and plasma current Ip are studied. The ELM-driven crash of the profiles in pedestal is reproduced, and the footprints of ELM filaments on targets are comparable with the measurements from divertor probes. A coherent mode is also found in the edge region in all the simulations after the ELM crash. The frequency and poloidal wave number are in the range of the edge coherent mode (ECM) on EAST. The magnetic fluctuations of the mode are smaller than the electric field fluctuations. The detailed comparisons between simulated mode structures with measurements will be reported. Statistical analysis on the simulated turbulent fluctuations shows that both the turbulent and blobby electron anomalous transport can pump the pedestal energy out into SOL, and then flow to divertors. The similar trend of the heat flux width with Ip is obtained in the simulations. The effects of the SOL current driven by LHW on ELMs will be discussed in this paper. This work was performed under the auspices of the US DOE by LLNL under contract DE-AC52-07NA27344. It was supported by the China NSF 11405215 and 11675217.

Low-dimensional representation of near-wall dynamics in shear flows, with implications to wall-models.

PubMed

Schmid, P J; Sayadi, T

2017-03-13

The dynamics of coherent structures near the wall of a turbulent boundary layer is investigated with the aim of a low-dimensional representation of its essential features. Based on a triple decomposition into mean, coherent and incoherent motion and a dynamic mode decomposition to recover statistical information about the incoherent part of the flow field, a driven linear system coupling first- and second-order moments of the coherent structures is derived and analysed. The transfer function for this system, evaluated for a wall-parallel plane, confirms a strong bias towards streamwise elongated structures, and is proposed as an 'impedance' boundary condition which replaces the bulk of the transport between the coherent velocity field and the coherent Reynolds stresses, thus acting as a wall model for large-eddy simulations (LES). It is interesting to note that the boundary condition is non-local in space and time. The extracted model is capable of reproducing the principal Reynolds stress components for the pretransitional, transitional and fully turbulent boundary layer.This article is part of the themed issue 'Toward the development of high-fidelity models of wall turbulence at large Reynolds number'. © 2017 The Author(s).

Foundations of metabolic organization: coherence as a basis of computational properties in metabolic networks.

PubMed

Igamberdiev, A U

1999-04-01

Biological organization is based on the coherent energy transfer allowing for macromolecules to operate with high efficiency and realize computation. Computation is executed with virtually 100% efficiency via the coherent operation of molecular machines in which low-energy recognitions trigger energy-driven non-equilibrium dynamic processes. The recognition process is of quantum mechanical nature being a non-demolition measurement. It underlies the enzymatic conversion of a substrate into the product (an elementary metabolic phenomenon); the switching via separation of the direct and reverse routes in futile cycles provides the generation and complication of metabolic networks (coherence within cycles is maintained by the supramolecular organization of enzymes); the genetic level corresponding to the appearance of digital information is based on reflective arrows (catalysts realize their own self-reproduction) and operation of hypercycles. Every metabolic cycle via reciprocal regulation of both its halves can generate rhythms and spatial structures (resulting from the temporally organized depositions from the cycles). Via coherent events which percolate from the elementary submolecular level to organismic entities, self-assembly based on the molecular complementarity is realized and the dynamic informational field operating within the metabolic network is generated.

Hot Electrons Regain Coherence in Semiconducting Nanowires

NASA Astrophysics Data System (ADS)

Reiner, Jonathan; Nayak, Abhay Kumar; Avraham, Nurit; Norris, Andrew; Yan, Binghai; Fulga, Ion Cosma; Kang, Jung-Hyun; Karzig, Toesten; Shtrikman, Hadas; Beidenkopf, Haim

2017-04-01

The higher the energy of a particle is above equilibrium, the faster it relaxes because of the growing phase space of available electronic states it can interact with. In the relaxation process, phase coherence is lost, thus limiting high-energy quantum control and manipulation. In one-dimensional systems, high relaxation rates are expected to destabilize electronic quasiparticles. Here, we show that the decoherence induced by relaxation of hot electrons in one-dimensional semiconducting nanowires evolves nonmonotonically with energy such that above a certain threshold hot electrons regain stability with increasing energy. We directly observe this phenomenon by visualizing, for the first time, the interference patterns of the quasi-one-dimensional electrons using scanning tunneling microscopy. We visualize the phase coherence length of the one-dimensional electrons, as well as their phase coherence time, captured by crystallographic Fabry-Pèrot resonators. A remarkable agreement with a theoretical model reveals that the nonmonotonic behavior is driven by the unique manner in which one-dimensional hot electrons interact with the cold electrons occupying the Fermi sea. This newly discovered relaxation profile suggests a high-energy regime for operating quantum applications that necessitate extended coherence or long thermalization times, and may stabilize electronic quasiparticles in one dimension.

Methodological comparison of active- and passive-driven oscillations in blood pressure; implications for the assessment of cerebral pressure-flow relationships.

PubMed

Smirl, Jonathan D; Hoffman, Keegan; Tzeng, Yu-Chieh; Hansen, Alex; Ainslie, Philip N

2015-09-01

We examined the between-day reproducibility of active (squat-stand maneuvers)- and passive [oscillatory lower-body negative pressure (OLBNP) maneuvers]-driven oscillations in blood pressure. These relationships were examined in both younger (n = 10; 25 ± 3 yr) and older (n = 9; 66 ± 4 yr) adults. Each testing protocol incorporated rest (5 min), followed by driven maneuvers at 0.05 (5 min) and 0.10 (5 min) Hz to increase blood-pressure variability and improve assessment of the pressure-flow dynamics using linear transfer function analysis. Beat-to-beat blood pressure, middle cerebral artery velocity, and end-tidal partial pressure of CO2 were monitored. The pressure-flow relationship was quantified in the very low (0.02-0.07 Hz) and low (0.07-0.20 Hz) frequencies (LF; spontaneous data) and at 0.05 and 0.10 Hz (driven maneuvers point estimates). Although there were no between-age differences, very few spontaneous and OLBNP transfer function metrics met the criteria for acceptable reproducibility, as reflected in a between-day, within-subject coefficient of variation (CoV) of <20%. Combined CoV data consist of LF coherence (15.1 ± 12.2%), LF gain (15.1 ± 12.2%), and LF normalized gain (18.5 ± 10.9%); OLBNP data consist of 0.05 (12.1 ± 15.%) and 0.10 (4.7 ± 7.8%) Hz coherence. In contrast, the squat-stand maneuvers revealed that all metrics (coherence: 0.6 ± 0.5 and 0.3 ± 0.5%; gain: 17.4 ± 12.3 and 12.7 ± 11.0%; normalized gain: 16.7 ± 10.9 and 15.7 ± 11.0%; and phase: 11.6 ± 10.2 and 17.3 ± 10.8%) at 0.05 and 0.10 Hz, respectively, were considered biologically acceptable for reproducibility. These findings have important implications for the reliable assessment and interpretation of cerebral pressure-flow dynamics in humans. Copyright © 2015 the American Physiological Society.

Methodological comparison of active- and passive-driven oscillations in blood pressure; implications for the assessment of cerebral pressure-flow relationships

PubMed Central

Hoffman, Keegan; Tzeng, Yu-Chieh; Hansen, Alex; Ainslie, Philip N.

2015-01-01

We examined the between-day reproducibility of active (squat-stand maneuvers)- and passive [oscillatory lower-body negative pressure (OLBNP) maneuvers]-driven oscillations in blood pressure. These relationships were examined in both younger (n = 10; 25 ± 3 yr) and older (n = 9; 66 ± 4 yr) adults. Each testing protocol incorporated rest (5 min), followed by driven maneuvers at 0.05 (5 min) and 0.10 (5 min) Hz to increase blood-pressure variability and improve assessment of the pressure-flow dynamics using linear transfer function analysis. Beat-to-beat blood pressure, middle cerebral artery velocity, and end-tidal partial pressure of CO2 were monitored. The pressure-flow relationship was quantified in the very low (0.02-0.07 Hz) and low (0.07–0.20 Hz) frequencies (LF; spontaneous data) and at 0.05 and 0.10 Hz (driven maneuvers point estimates). Although there were no between-age differences, very few spontaneous and OLBNP transfer function metrics met the criteria for acceptable reproducibility, as reflected in a between-day, within-subject coefficient of variation (CoV) of <20%. Combined CoV data consist of LF coherence (15.1 ± 12.2%), LF gain (15.1 ± 12.2%), and LF normalized gain (18.5 ± 10.9%); OLBNP data consist of 0.05 (12.1 ± 15.%) and 0.10 (4.7 ± 7.8%) Hz coherence. In contrast, the squat-stand maneuvers revealed that all metrics (coherence: 0.6 ± 0.5 and 0.3 ± 0.5%; gain: 17.4 ± 12.3 and 12.7 ± 11.0%; normalized gain: 16.7 ± 10.9 and 15.7 ± 11.0%; and phase: 11.6 ± 10.2 and 17.3 ± 10.8%) at 0.05 and 0.10 Hz, respectively, were considered biologically acceptable for reproducibility. These findings have important implications for the reliable assessment and interpretation of cerebral pressure-flow dynamics in humans. PMID:26183476

Electron-rich driven electrochemical solid-state amorphization in Li-Si alloys.

PubMed

Wang, Zhiguo; Gu, Meng; Zhou, Yungang; Zu, Xiaotao; Connell, Justin G; Xiao, Jie; Perea, Daniel; Lauhon, Lincoln J; Bang, Junhyeok; Zhang, Shengbai; Wang, Chongmin; Gao, Fei

2013-09-11

The physical and chemical behaviors of materials used in energy storage devices, such as lithium-ion batteries (LIBs), are mainly controlled by an electrochemical process, which normally involves insertion/extraction of ions into/from a host lattice with a concurrent flow of electrons to compensate charge balance. The fundamental physics and chemistry governing the behavior of materials in response to the ions insertion/extraction is not known. Herein, a combination of in situ lithiation experiments and large-scale ab initio molecular dynamics simulations are performed to explore the mechanisms of the electrochemically driven solid-state amorphization in Li-Si systems. We find that local electron-rich condition governs the electrochemically driven solid-state amorphization of Li-Si alloys. This discovery provides the fundamental explanation of why lithium insertion in semiconductor and insulators leads to amorphization, whereas in metals, it leads to a crystalline alloy. The present work correlates electrochemically driven reactions with ion insertion, electron transfer, lattice stability, and phase equilibrium.

Electron-Rich Driven Electrochemical Solid-State Amorphization in Li-Si Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhiguo; Gu, Meng; Zhou, Yungang

2013-08-14

The physical and chemical behaviors of materials used in energy storage devices, such as lithium-ion batteries (LIBs), are mainly controlled by an electrochemical process, which normally involves insertion/extraction of ions into/from a host lattice with a concurrent flow of electrons to compensate charge balance. The fundamental physics and chemistry governing the behavior of materials in response to the ions insertion/extraction is not known. Herein, a combination of in situ lithiation experiments and large-scale ab initio molecular dynamics simulations are performed to explore the mechanisms of the electrochemically driven solid-state amorphization in Li-Si systems. We find that local electron-rich condition governsmore » the electrochemically driven solid-state amorphization of Li-Si alloys. This discovery provides the fundamental explanation of why lithium insertion in semiconductor and insulators leads to amorphization, whereas in metals, it leads to a crystalline alloy. The present work correlates electrochemically driven reactions with ion insertion, electron transfer, lattice stability and phase equilibrium.« less

South Asia: A Strategic Assessment

DTIC Science & Technology

1998-01-01

deal with India and Pakistan m a comprehensive and coherent matter, especially m recent years In the post-Cold War context, our interest m “ global ... issues ,” especially non-prohferatlon, has driven U S r@atlons with both Palustan and India At present, our ablhty to conduct normal secunty relations

Volume-scalable high-brightness three-dimensional visible light source

DOEpatents

Subramania, Ganapathi; Fischer, Arthur J; Wang, George T; Li, Qiming

2014-02-18

A volume-scalable, high-brightness, electrically driven visible light source comprises a three-dimensional photonic crystal (3DPC) comprising one or more direct bandgap semiconductors. The improved light emission performance of the invention is achieved based on the enhancement of radiative emission of light emitters placed inside a 3DPC due to the strong modification of the photonic density-of-states engendered by the 3DPC.

Loss of coherence and memory effects in quantum dynamics Loss of coherence and memory effects in quantum dynamics

NASA Astrophysics Data System (ADS)

Benatti, Fabio; Floreanini, Roberto; Scholes, Greg

2012-08-01

The last years have witnessed fast growing developments in the use of quantum mechanics in technology-oriented and information-related fields, especially in metrology, in the developments of nano-devices and in understanding highly efficient transport processes. The consequent theoretical and experimental outcomes are now driving new experimental tests of quantum mechanical effects with unprecedented accuracies that carry with themselves the concrete possibility of novel technological spin-offs. Indeed, the manifold advances in quantum optics, atom and ion manipulations, spintronics and nano-technologies are allowing direct experimental verifications of new ideas and their applications to a large variety of fields. All of these activities have revitalized interest in quantum mechanics and created a unique framework in which theoretical and experimental physics have become fruitfully tangled with information theory, computer, material and life sciences. This special issue aims to provide an overview of what is currently being pursued in the field and of what kind of theoretical reference frame is being developed together with the experimental and theoretical results. It consists of three sections: 1. Memory effects in quantum dynamics and quantum channels 2. Driven open quantum systems 3. Experiments concerning quantum coherence and/or decoherence The first two sections are theoretical and concerned with open quantum systems. In all of the above mentioned topics, the presence of an external environment needs to be taken into account, possibly in the presence of external controls and/or forcing, leading to driven open quantum systems. The open system paradigm has proven to be central in the analysis and understanding of many basic issues of quantum mechanics, such as the measurement problem, quantum communication and coherence, as well as for an ever growing number of applications. The theory is, however, well-settled only when the so-called Markovian or memoryless, approximation applies. When strong coupling or long environmental relaxation times make memory effects important for a realistic description of the dynamics, new strategies are asked for and the assessment of the general structure of non-Markovian dynamical equations for realistic systems is a crucial issue. The impact of quantum phenomena such as coherence and entanglement in biology has recently started to be considered as a possible source of the high efficiency of certain biological mechanisms, including e.g. light harvesting in photosynthesis and enzyme catalysis. In this effort, the relatively unknown territory of driven open quantum systems is being explored from various directions, with special attention to the creation and stability of coherent structures away from thermal equilibrium. These investigations are likely to advance our understanding of the scope and role of quantum mechanics in living systems; at the same time they provide new ideas for the developments of next generations of devices implementing highly efficient energy harvesting and conversion. The third section concerns experimental studies that are currently being pursued. Multidimensional nonlinear spectroscopy, in particular, has played an important role in enabling experimental detection of the signatures of coherence. Recent remarkable results suggest that coherence—both electronic and vibrational—survive for substantial timescales even in complex biological systems. The papers reported in this issue describe work at the forefront of this field, where researchers are seeking a detailed understanding of the experimental signatures of coherence and its implications for light-induced processes in biology and chemistry.

Sub-cycle control of terahertz high-harmonic generation by dynamical Bloch oscillations

NASA Astrophysics Data System (ADS)

Schubert, O.; Hohenleutner, M.; Langer, F.; Urbanek, B.; Lange, C.; Huttner, U.; Golde, D.; Meier, T.; Kira, M.; Koch, S. W.; Huber, R.

2014-02-01

Ultrafast charge transport in strongly biased semiconductors is at the heart of high-speed electronics, electro-optics and fundamental solid-state physics. Intense light pulses in the terahertz spectral range have opened fascinating vistas. Because terahertz photon energies are far below typical electronic interband resonances, a stable electromagnetic waveform may serve as a precisely adjustable bias. Novel quantum phenomena have been anticipated for terahertz amplitudes, reaching atomic field strengths. We exploit controlled (multi-)terahertz waveforms with peak fields of 72 MV cm-1 to drive coherent interband polarization combined with dynamical Bloch oscillations in semiconducting gallium selenide. These dynamics entail the emission of phase-stable high-harmonic transients, covering the entire terahertz-to-visible spectral domain between 0.1 and 675 THz. Quantum interference of different ionization paths of accelerated charge carriers is controlled via the waveform of the driving field and explained by a quantum theory of inter- and intraband dynamics. Our results pave the way towards all-coherent terahertz-rate electronics.

Creation and Manipulation of Stable Dark Solitons and Vortices in Microcavity Polariton Condensates.

PubMed

Ma, Xuekai; Egorov, Oleg A; Schumacher, Stefan

2017-04-14

Solitons and vortices obtain widespread attention in different physical systems as they offer potential use in information storage, processing, and communication. In exciton-polariton condensates in semiconductor microcavities, solitons and vortices can be created optically. However, dark solitons are unstable and vortices cannot be spatially controlled. In the present work we demonstrate the existence of stable dark solitons and vortices under nonresonant incoherent excitation of a polariton condensate with a simple spatially periodic pump. In one dimension, we show that an additional coherent light pulse can be used to create or destroy a dark soliton in a controlled manner. In two dimensions we demonstrate that a coherent light beam can be used to move a vortex to a specific position on the lattice or be set into motion by simply switching the periodic pump structure from two-dimensional (lattice) to one-dimensional (stripes). Our theoretical results open up exciting possibilities for optical on-demand generation and control of dark solitons and vortices in polariton condensates.

Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures

DOE PAGES

Xiong, Gang; Moutanabbir, Oussama; Reiche, Manfred; ...

2014-12-06

Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensionsmore » is highly novel. In this study, we will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.« less

Cross-plane coherent acoustic phonons in two-dimensional organic-inorganic hybrid perovskites.

PubMed

Guo, Peijun; Stoumpos, Constantinos C; Mao, Lingling; Sadasivam, Sridhar; Ketterson, John B; Darancet, Pierre; Kanatzidis, Mercouri G; Schaller, Richard D

2018-05-22

Two-dimensional Ruddlesden-Popper organic-inorganic hybrid layered perovskites (2D RPs) are solution-grown semiconductors with prospective applications in next-generation optoelectronics. The heat-carrying, low-energy acoustic phonons, which are important for heat management of 2D RP-based devices, have remained unexplored. Here we report on the generation and propagation of coherent longitudinal acoustic phonons along the cross-plane direction of 2D RPs, following separate characterizations of below-bandgap refractive indices. Through experiments on single crystals of systematically varied perovskite layer thickness, we demonstrate significant reduction in both group velocity and propagation length of acoustic phonons in 2D RPs as compared to the three-dimensional methylammonium lead iodide counterpart. As borne out by a minimal coarse-grained model, these vibrational properties arise from a large acoustic impedance mismatch between the alternating layers of perovskite sheets and bulky organic cations. Our results inform on thermal transport in highly impedance-mismatched crystal sub-lattices and provide insights towards design of materials that exhibit highly anisotropic thermal dissipation properties.

Signatures of four-particle correlations associated with exciton-carrier interactions in coherent spectroscopy on bulk GaAs

NASA Astrophysics Data System (ADS)

Webber, D.; Wilmer, B. L.; Liu, X.; Dobrowolska, M.; Furdyna, J. K.; Bristow, A. D.; Hall, K. C.

2016-10-01

Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission energy that varies with the absorption energy, ranging from dispersive on the diagonal through absorptive for low-energy interband transitions to dispersive with the opposite sign for interband transitions high above band gap. Simulations using a multilevel model augmented by many-body effects provide excellent agreement with the 2DFTS experiments and indicate that excitation-induced dephasing (EID) and excitation-induced shift (EIS) affect degenerate and nondegenerate interactions equivalently, with stronger exciton-carrier coupling relative to exciton-exciton coupling by approximately an order of magnitude. These simulations also indicate that EID effects are three times stronger than EIS in contributing to the coherent response of the semiconductor.

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

NASA Astrophysics Data System (ADS)

Zhang, Z. Y.; Oehler, A. E. H.; Resan, B.; Kurmulis, S.; Zhou, K. J.; Wang, Q.; Mangold, M.; Süedmeyer, T.; Keller, U.; Weingarten, K. J.; Hogg, R. A.

2012-06-01

High pulse repetition rate (>=10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ~2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.

Coherent electron-spin-resonance manipulation of three individual spins in a triple quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noiri, A.; Yoneda, J.; Nakajima, T.

2016-04-11

Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressable manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micro-magnet makes the local Zeeman field difference between neighboring spins much larger than the nuclear field fluctuation, which ensures the addressable driving of electron-spin-resonance by shifting the resonance condition for each spin. We observe distinct coherent Rabi oscillations for three spins in a semiconductor triple quantummore » dot with up to 25 MHz spin rotation frequencies. This individual manipulation over three spins enables us to arbitrarily change the magnetic spin quantum number of the three spin system, and thus to operate a triple-dot device as a three-qubit system in combination with the existing technique of exchange operations among three spins.« less

The optical pumping of alkali atoms using coherent radiation from semi-conductor injection lasers and incoherent radiation from resonance lamps

NASA Technical Reports Server (NTRS)

Singh, G.

1973-01-01

An experimental study for creating population differences in the ground states of alkali atoms (Cesium 133) is presented. Studies made on GaAs-junction lasers and the achievement of population inversions among the hyperfine levels in the ground state of Cs 133 by optically pumping it with radiation from a GaAs diode laser. Laser output was used to monitor the populations in the ground state hyperfine levels as well as to perform the hyperfine pumping. A GaAs laser operated at about 77 K was used to scan the 8521 A line of Cs 133. Experiments were performed both with neon-filled and with paraflint-coated cells containing the cesium vapor. Investigations were also made for the development of the triple resonance coherent pulse technique and for the detection of microwave induced hyperfine trasistions by destroying the phase relationships produced by a radio frequency pulse. A pulsed cesium resonance lamp developed, and the lamp showed clean and reproducible switching characteristics.

Silicon quantum processor with robust long-distance qubit couplings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tosi, Guilherme; Mohiyaddin, Fahd A.; Schmitt, Vivien

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowingmore » selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.« less

Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures.

PubMed

Xiong, Gang; Moutanabbir, Oussama; Reiche, Manfred; Harder, Ross; Robinson, Ian

2014-12-10

Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. We will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices. © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

NASA Astrophysics Data System (ADS)

Zhao, R.; Rossi, A.; Giblin, S. P.; Fletcher, J. D.; Hudson, F. E.; Möttönen, M.; Kataoka, M.; Dzurak, A. S.

2017-10-01

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of e f within a measurement uncertainty as low as 0.27 ppm.

Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

NASA Astrophysics Data System (ADS)

Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

2018-04-01

Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

Torque Transient of Magnetically Drive Flow for Viscosity Measurement

NASA Technical Reports Server (NTRS)

Ban, Heng; Li, Chao; Su, Ching-Hua; Lin, Bochuan; Scripa, Rosalia N.; Lehoczky, Sandor L.

2004-01-01

Viscosity is a good indicator of structural changes for complex liquids, such as semiconductor melts with chain or ring structures. This paper discusses the theoretical and experimental results of the transient torque technique for non-intrusive viscosity measurement. Such a technique is essential for the high temperature viscosity measurement of high pressure and toxic semiconductor melts. In this paper, our previous work on oscillating cup technique was expanded to the transient process of a magnetically driven melt flow in a damped oscillation system. Based on the analytical solution for the fluid flow and cup oscillation, a semi-empirical model was established to extract the fluid viscosity. The analytical and experimental results indicated that such a technique has the advantage of short measurement time and straight forward data analysis procedures

Mn-based ferromagnetic semiconductors

NASA Astrophysics Data System (ADS)

Dietl, Tomasz; Sawicki, Maciej

2003-07-01

The present status of research and prospects for device applications of ferromagnetic (diluted magnetic) semiconductors (DMS) is presented. We review the nature of the electronic states and the mechanisms of the carrier-mediated exchange interactions (mean-field Zener model) in p-type Mn-based III-V and II-VI compounds, highlighting a good correspondence of experimental findings and theoretical predictions. An account of the latest progress on the road of increasing the Currie point to above the room temperature is given for both families of compounds. We comment on a possibility of obtaining ferromagnetism in n-type materials, taking (Zn,Mn)O:Al as the example. Concerning technologically important issue of easy axis and domain engineering, we present theoretical predictions and experimental results on the temperature and carrier concentration driven change of magnetic anisotropy in (Ga,Mn)As.