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Sample records for collimated magnetron sputter

  1. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  2. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  3. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  4. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  5. Magnetron-Sputtered Amorphous Metallic Coatings

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Mehra, M.; Khanna, S. K.

    1985-01-01

    Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

  6. High power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Brenning, N.; Lundin, D.; Helmersson, U.

    2012-05-15

    The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

  7. Pulsed dc self-sustained magnetron sputtering

    SciTech Connect

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-09-15

    The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of {approx}0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of {approx}560 W/cm{sup 2}. The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range

  8. Particle contamination formation in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Sequeda, F.; Huang, C.

    1997-07-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique which provides real-time, {ital in situ} imaging of particles {gt}0.3 {mu}m on the target, substrate, or in the plasma. Using this technique, we demonstrate that the mechanisms for particle generation, transport, and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes, due to the inherent spatial nonuniformity of magnetically enhanced plasmas. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. There, film redeposition induces filament or nodule growth. Sputter removal of these features is inhibited by the dependence of sputter yield on angle of incidence. These features enhance trapping of plasma particles, which then increases filament growth. Eventually the growths effectively {open_quotes}short-circuit{close_quotes} the sheath, causing high currents to flow through these features. This, in turn, causes mechanical failure of the growth resulting in fracture and ejection of the target contaminants into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests it may be universal to many sputter processes. {copyright} {ital 1997 American Vacuum Society.}

  9. Simulation of sputter deposition in dc magnetrons

    NASA Astrophysics Data System (ADS)

    Evstatiev, Evstati; Cluggish, Brian

    2010-11-01

    Material sputter deposition has a multitude of industrial applications. Our goal at FAR-TECH, Inc., is a complete numerical simulation of a dc magnetron device. We intend to modify existing FAR-TECH, Inc. code to include flexible geometry manipulation, the most current atomic physics data, add transport of neutral atoms across the device, and model deposition on the substrate. Currently, dc magnetron simulation codes have limited geometry manipulation capabilities; however, this is important if design optimization is intended. Another uncommon feature in dc magnetron simulation codes is parallel performance. Since PIC simulations may take extremely long times (weeks), we are parallelizing our codes to achieve shorter run times. (Codes based on hybrid models perform faster, but have the disadvantage of having to know accurately the diffusion coefficients of electrons across the magnetic field lines.) We report preliminary results of this effort.

  10. Reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gudmundsson, J. T.; Magnus, F.; Tryggvason, T. K.; Sveinsson, O. B.; Olafsson, S.

    2012-10-01

    Here we discuss reactive high power impulse magnetron sputtering sputtering (HiPIMS) [1] of Ti target in an Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage. The discharge current increases with decreasing frequency or voltage. This we attribute to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as nitride [2] or oxide [3] forms on the target. We also discuss the growth of TiN films on SiO2 at temperatures of 22-600 ^oC. The HiPIMS process produces denser films at lower growth temperature and the surface is much smoother and have a significantly lower resistivity than dc magnetron sputtered films on SiO2 at all growth temperatures due to reduced grain boundary scattering [4].[4pt] [1] J. T. Gudmundsson, N. Brenning, D. Lundin and U. Helmersson, J. Vac. Sci. Technol. A, 30 030801 (2012)[0pt] [2] F. Magnus, O. B. Sveinsson, S. Olafsson and J. T. Gudmundsson, J. Appl. Phys., 110 083306 (2011)[0pt] [3] F. Magnus, T. K. Tryggvason, S. Olafsson and J. T. Gudmundsson, J. Vac. Sci. Technol., submitted 2012[0pt] [4] F. Magnus, A. S. Ingason, S. Olafsson and J. T. Gudmundsson, IEEE Elec. Dev. Lett., accepted 2012

  11. Fuzzy tungsten in a magnetron sputtering device

    NASA Astrophysics Data System (ADS)

    Petty, T. J.; Khan, A.; Heil, T.; Bradley, J. W.

    2016-11-01

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 1023-3.0 × 1024 m-2, the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 1024 m-2, and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ1/2 relation as opposed to the incubation fluence fit.

  12. On the target surface cleanness during magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Schelfhout, R.; Strijckmans, K.; Boydens, F.; Depla, D.

    2015-11-01

    The thickness of the chemisorbed oxide layer on a tantalum target surface was determined from sputter cleaning experiments. These measurements show a clear logarithmic growth behaviour as a function of the oxygen exposure. By extrapolating this result towards other sputter conditions, the target cleanness during magnetron sputter deposition can be estimated.

  13. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  14. Evolution of film temperature during magnetron sputtering

    SciTech Connect

    Shaginyan, L.R.; Han, J.G.; Shaginyan, V.R.; Musil, J.

    2006-07-15

    We report on the results of measurements of the temperature T{sup F}{sub surf} which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T{sup F}{sub surf} and substrate temperature (T{sub s}) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T{sup F}{sub surf} steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T{sub s} after stopping the deposition. At the same time, the T{sub s} either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T{sub s} remains several times lower than the T{sup F}{sub surf}. The T{sup F}{sub surf} is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of deg. C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature T{sup F}{sub surf} of HTSL is several times higher than the T{sub s}. Variations in the T{sup F}{sub surf} fairly correlate with structure changes of Cr films along thickness investigated in detail previously.

  15. Direct observation of spoke evolution in magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Anders, André; Yang, Yuchen

    2017-08-01

    Ionization zones, also known as spokes, are plasma instabilities manifested as locations of intensified excitation and ionization over a sputtering magnetron's racetrack. Using a linear magnetron and a streak camera, we were able to observe and quantify spoke dynamics. The technique allows us to image the onset and changes for both direct current magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). Spokes in dcMS exhibit substructures. Spokes in HiPIMS are not stable as they shift along the racetrack; rather, they tend to grow or diminish, and they may split and merge. Their evolution can be interpreted in the context of localized electric fields and associated electron heating.

  16. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  17. Multi-cathode unbalanced magnetron sputtering systems

    NASA Technical Reports Server (NTRS)

    Sproul, William D.

    1991-01-01

    Ion bombardment of a growing film during deposition is necessary in many instances to ensure a fully dense coating, particularly for hard coatings. Until the recent advent of unbalanced magnetron (UBM) cathodes, reactive sputtering had not been able to achieve the same degree of ion bombardment as other physical vapor deposition processes. The amount of ion bombardment of the substrate depends on the plasma density at the substrate, and in a UBM system the amount of bombardment will depend on the degree of unbalance of the cathode. In multi-cathode systems, the magnetic fields between the cathodes must be linked to confine the fast electrons that collide with the gas atoms. Any break in this linkage results in electrons being lost and a low plasma density. Modeling of the magnetic fields in a UBM cathode using a finite element analysis program has provided great insight into the interaction between the magnetic fields in multi-cathode systems. Large multi-cathode systems will require very strong magnets or many cathodes in order to maintain the magnetic field strength needed to achieve a high plasma density. Electromagnets offer the possibility of independent control of the plasma density. Such a system would be a large-scale version of an ion beam enhanced deposition (IBED) system, but, for the UBM system where the plasma would completely surround the substrate, the acronym IBED might now stand for Ion Blanket Enhanced Deposition.

  18. Thick beryllium coatings by magnetron sputtering

    SciTech Connect

    Wu, H; Nikroo, A; Youngblood, K; Moreno, K; Wu, D; Fuller, T; Alford, C; Hayes, J; Detor, A; Wong, M; Hamza, A; van Buuren, T; Chason, E

    2011-04-14

    Thick (>150 {micro}m) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility (NIF). As an added complication, the coatings are deposited on mm-scale spherical substrates, as opposed to flats. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. We used ultra small angle x-ray spectroscopy (USAXS) to characterize the void fraction and distribution along the spherical surface. We investigated the void structure using a combination focused ion beam (FIB) and scanning electron microscope (SEM), along with transmission electron microscopy (TEM). Our results show a few volume percent of voids and a typical void diameter of less than two hundred nanometers. Understanding how the stresses in the deposited material develop with thickness is important so that we can minimize film cracking and delamination. To that end, an in-situ multiple optical beam stress sensor (MOSS) was used to measure the stress behavior of thick Beryllium coatings on flat substrates as the material was being deposited. We will show how the film stress saturates with thickness and changes with pressure.

  19. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  20. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  1. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  2. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  3. Formation of dielectric silicon compounds by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Veselov, D. S.; Voronov, Yu A.

    2016-09-01

    The paper is devoted to the study of reactive magnetron sputtering of the silicon target in the ambient of inert argon gas with reactive gas, nitrogen or oxygen. The magnetron was powered by two mid-frequency generators of a rectangular pulse of opposite polarity. The negative polarity pulse provides the sputtering of the target. The positive polarity pulse provides removal of accumulated charge from the surface of the target. This method does not require any special devices of resistances matching and provides continuous sputtering of the target.

  4. Magnetron sputtering for the production of EUV mask blanks

    NASA Astrophysics Data System (ADS)

    Kearney, Patrick; Ngai, Tat; Karumuri, Anil; Yum, Jung; Lee, Hojune; Gilmer, David; Vo, Tuan; Goodwin, Frank

    2015-03-01

    Ion Beam Deposition (IBD) has been the primary technique used to deposit EUV mask blanks since 1995 when it was discovered it could produce multilayers with few defects. Since that time the IBD technique has been extensively studied and improved and is finally approaching usable defectivities. But in the intervening years, the defectivity of magnetron sputtering has been greatly improved. This paper evaluates the suitability of a modern magnetron tool to produce EUV mask blanks and the ability to support HVM production. In particular we show that the reflectivity and uniformity of these tools are superior to current generation IBD tools, and that the magnetron tools can produce EUV films with defect densities comparable to recent best IBD tool performance. Magnetron tools also offer many advantages in manufacturability and tool throughput; however, challenges remain, including transitioning the magnetron tools from the wafer to mask formats. While work continues on quantifying the capability of magnetron sputtering to meet the mask blank demands of the industry, for the most part the remaining challenges do not require any fundamental improvements to existing technology. Based on the recent results and the data presented in this paper there is a clear indication that magnetron deposition should be considered for the future of EUV mask blank production.

  5. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  6. A Plasma Lens for Magnetron Sputtering

    SciTech Connect

    Anders, Andre; Brown, Jeff

    2010-11-30

    A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

  7. Very low pressure high power impulse triggered magnetron sputtering

    DOEpatents

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  8. Development of magnetron sputtering simulator with GPU parallel computing

    NASA Astrophysics Data System (ADS)

    Sohn, Ilyoup; Kim, Jihun; Bae, Junkyeong; Lee, Jinpil

    2014-12-01

    Sputtering devices are widely used in the semiconductor and display panel manufacturing process. Currently, a number of surface treatment applications using magnetron sputtering techniques are being used to improve the efficiency of the sputtering process, through the installation of magnets outside the vacuum chamber. Within the internal space of the low pressure chamber, plasma generated from the combination of a rarefied gas and an electric field is influenced interactively. Since the quality of the sputtering and deposition rate on the substrate is strongly dependent on the multi-physical phenomena of the plasma regime, numerical simulations using PIC-MCC (Particle In Cell, Monte Carlo Collision) should be employed to develop an efficient sputtering device. In this paper, the development of a magnetron sputtering simulator based on the PIC-MCC method and the associated numerical techniques are discussed. To solve the electric field equations in the 2-D Cartesian domain, a Poisson equation solver based on the FDM (Finite Differencing Method) is developed and coupled with the Monte Carlo Collision method to simulate the motion of gas particles influenced by an electric field. The magnetic field created from the permanent magnet installed outside the vacuum chamber is also numerically calculated using Biot-Savart's Law. All numerical methods employed in the present PIC code are validated by comparison with analytical and well-known commercial engineering software results, with all of the results showing good agreement. Finally, the developed PIC-MCC code is parallelized to be suitable for general purpose computing on graphics processing unit (GPGPU) acceleration, so as to reduce the large computation time which is generally required for particle simulations. The efficiency and accuracy of the GPGPU parallelized magnetron sputtering simulator are examined by comparison with the calculated results and computation times from the original serial code. It is found that

  9. Reactive high power impulse magnetron sputtering: combining simulation and experiment

    NASA Astrophysics Data System (ADS)

    Kozak, Tomas; Vlcek, Jaroslav

    2016-09-01

    Reactive high-power impulse magnetron sputtering (HiPIMS) has recently been used for preparation of various oxide films with high application potential, such as TiO2, ZrO2, Ta2O5, HfO2, VO2. Using our patented method of pulsed reactive gas flow control with an optimized reactive gas inlet, we achieved significantly higher deposition rates compared to typical continuous dc magnetron depositions. We have developed a time-dependent model of the reactive HiPIMS. The model includes a depth-resolved description of the sputtered target (featuring sputtering, implantation and knock-on implantation processes) and a parametric description of the discharge plasma (dissociation of reactive gas, ionization and return of sputtered atoms and gas rarefaction). The model uses a combination of experimental and simulation data as input. We have calculated the composition of the target and substrate for several deposition conditions. The simulations predict a reduced compound coverage of the target in HiPIMS compared to the continuous dc sputtering regime which explains the increased deposition rate. The simulations show that an increased dissociation of oxygen in a HiPIMS discharge is beneficial to achieve stoichiometric films on the substrate at high deposition rates.

  10. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  11. Lateral variation of target poisoning during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Güttler, D.; Grötzschel, R.; Möller, W.

    2007-06-01

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar /N2 atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  12. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  13. Discharge current modes of high power impulse magnetron sputtering

    SciTech Connect

    Wu, Zhongzhen Xiao, Shu; Ma, Zhengyong; Cui, Suihan; Ji, Shunping; Pan, Feng; Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2015-09-15

    Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  14. Comprehensive computer model for magnetron sputtering. II. Charged particle transport

    SciTech Connect

    Jimenez, Francisco J. Dew, Steven K.; Field, David J.

    2014-11-01

    Discharges for magnetron sputter thin film deposition systems involve complex plasmas that are sensitively dependent on magnetic field configuration and strength, working gas species and pressure, chamber geometry, and discharge power. The authors present a numerical formulation for the general solution of these plasmas as a component of a comprehensive simulation capability for planar magnetron sputtering. This is an extensible, fully three-dimensional model supporting realistic magnetic fields and is self-consistently solvable on a desktop computer. The plasma model features a hybrid approach involving a Monte Carlo treatment of energetic electrons and ions, along with a coupled fluid model for thermalized particles. Validation against a well-known one-dimensional system is presented. Various strategies for improving numerical stability are investigated as is the sensitivity of the solution to various model and process parameters. In particular, the effect of magnetic field, argon gas pressure, and discharge power are studied.

  15. Magnetron sputtering in rigid optical solar reflectors production

    NASA Astrophysics Data System (ADS)

    Asainov, O. Kh; Bainov, D. D.; Krivobokov, V. P.; Sidelev, D. V.

    2016-07-01

    Magnetron sputtering was applied to meet the growing need for glass optical solar reflectors. This plasma method provided more uniform deposition of the silver based coating on glass substrates resulted in decrease of defective reflectors fraction down to 5%. For instance, such parameter of resistive evaporation was of 30%. Silver film adhesion to glass substrate was enhanced with indium tin oxide sublayer. Sunlight absorption coefficient of these rigid reflectors was 0.081-0.083.

  16. Hollow target magnetron-sputter-type solid material ion source.

    PubMed

    Sasaki, D; Ieki, S; Kasuya, T; Wada, M

    2012-02-01

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al(+) and Ar(+) ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 μA, with the Al(+) ion beam occupying 30% of the total beam current.

  17. Characterisation of Mg biodegradable stents produced by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Elmrabet, N.; Botterill, N.; Grant, D. M.; Brown, P. D.

    2015-10-01

    Novel Mg-minitubes for biodegradable stent applications have been produced using PVD magnetron sputtering. The minitubes were characterised, as a function of annealing temperature, using a combination of SEM/EDS, XRD and hardness testing. The as-deposited minitubes exhibited columnar grain structures with high levels of porosity. Slight alteration to the crystal structure from columnar to equiaxed grain growth was demonstrated at elevated temperature, along with increased material densification, hardness and corrosion resistance.

  18. Discharge Physics of High Power Impulse Magnetron Sputtering

    SciTech Connect

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  19. Particle contamination formation and detection in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Weiss, C.A.; Sequeda, F.; Huang, C.

    1996-10-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination can cause electrical shorting, pin holes, problems with photolithography, adhesion failure, as well as visual and cosmetic defects. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique that provides real-time, {ital in-situ} imaging of particles > 0.3 {mu}m in diameter. Using this technique, the causes, sources and influences on particles in plasma and non-plasma and non-plasma processes may be independently evaluated and corrected. Several studies employing laser light scattering have demonstrated both homogeneous and heterogeneous causes of particle contamination. In this paper, we demonstrate that the mechanisms for particle generation, transport and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. In this region, film redeposition is followed by filament or nodule growth and enhanced trapping which increases filament growth. Eventually the filaments effectively ``short circuit`` the sheath, causing high currents to flow through these features. This, in turn, causes heating failure of the filament fracturing and ejecting the filaments into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor (IC) fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests that this mechanism may be universal to many sputtering processes.

  20. Plasma properties of RF magnetron sputtering system using Zn target

    SciTech Connect

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A.

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  1. Preparation and characterization of RF magnetron sputtered calcium pyrophosphate coatings.

    PubMed

    Yonggang, Yan; Wolke, J G C; Yubao, Li; Jansen, J A

    2006-03-15

    CaP ceramic has been widely used as coating on metals in orthopedics and oral dentistry. Variations in CaP composition can lead to different dissolution/precipitation behavior and may also affect the bone response. In the present study calcium pyrophosphate and hydroxylapatite coatings were successfully prepared by RF magnetron sputtering deposition. The phase composition, morphological properties, and the dissolution in SBF were characterized by using XRD, FTIR, EDS, SEM, and spectrophotometry. The results showed that all the sputtered coatings were amorphous and changed into a crystal structure after IR-radiation. The temperature for the crystallization of the amorphous coatings is lower for the hydroxylapatite coating (550 degrees C), compared to the calcium pyrophosphate coating (650 degrees C). All sputtered amorphous coatings were instable in SBF and dissolved partially within 4 wks of incubation. The heat-treated coatings appeared to be stable after incubation. These results showed that magnetron sputtering of calcium pyrophosphate coating is a promising method for forming a biocompatible ceramic coating.

  2. Elementary surface processes during reactive magnetron sputtering of chromium

    SciTech Connect

    Monje, Sascha; Corbella, Carles Keudell, Achim von

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  3. Elementary surface processes during reactive magnetron sputtering of chromium

    NASA Astrophysics Data System (ADS)

    Monje, Sascha; Corbella, Carles; von Keudell, Achim

    2015-10-01

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400-800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O2 of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  4. Optical Properties of Magnetron sputtered Nickel Thin Films

    NASA Astrophysics Data System (ADS)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  5. Plasma regimes in high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    de Los Arcos, Teresa

    2013-09-01

    High Power Pulsed Magnetron Sputtering (HPPMS) is a relatively recent variation of magnetron sputtering where high power is applied to the magnetron in short pulses. The result is the formation of dense transient plasmas with a high fraction of ionized species, ideally leading to better control of film growth through substrate bias. However, the broad range of experimental conditions accessible in pulsed discharges results in bewildering variations in current and voltage pulse shapes, pulse power densities, etc, which represent different discharge behaviors, making it difficult to identify relevant deposition conditions. The complexity of the plasma dynamics is evident. Within each pulse, plasma characteristics such as plasma composition, density, gas rarefaction, spatial distribution, degree of self-sputtering, etc. vary with time. A recent development has been the discovery that the plasma emission can self-organize into well-defined regions of high and low plasma emissivity above the racetrack (spokes), which rotate in the direction given by the E ×B drift and that significantly influence the transport mechanisms in HPPMS. One seemingly universal characteristic of HPPMS plasmas is the existence of well defined plasma regimes for different power ranges. These regimes are clearly differentiated in terms of plasma conductivity, plasma composition and spatial plasma self-organization. We will discuss the global characteristics of these regimes in terms of current-voltage characteristics, energy-resolved QMS and OES analysis, and fast imaging. In particular we will discuss how the reorganization of the plasma emission into spokes is associated only to specific regimes of high plasma conductivity. We will also briefly discuss the role of the target in shaping the characteristics of the HPPMS plasma, since sputtering is a surface-driven process. This work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the framework of the SFB-TR87.

  6. Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

    NASA Astrophysics Data System (ADS)

    Anders, André

    2017-05-01

    High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. By applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films. Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become "poisoned," i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.

  7. Ionized Magnetron Sputtering with a Coupled DC and Microwave Plasma

    NASA Astrophysics Data System (ADS)

    Hayden, D. B.; Green, K. M.; Juliano, D. R.; Ruzic, D. N.; Weiss, C. A.; Lantsman, A.; Ishii, J.

    1996-10-01

    A DC magnetron sputtering system is enhanced via an antenna microwave source. The ability of the microwaves to ionize the metal atoms from the aluminum target though electron impact and Penning ionization is studied as a function of microwave power, magnetron power, and pressure. A bias in the tens of volts (negative) is applied to the substrate and sample. This creates an electric field between the plasma and the substrate which is designed to draw the metal ions into the sample orthogonally for filling increased aspect ratio trenches. A quartz crystal oscillator is placed behind a gridded energy analyzer and embedded in the substrate. It determines the ion-to-neutral ratio and the deposition rate, and the gridded energy analyzer determines the energy spectrum of the ions, the ion current density, and the uniformity. These quantities are compared to the results of a computer simulation.

  8. Magnetron co-sputtering system for coating ICF targets

    SciTech Connect

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-12-09

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres. The preliminary data on the properties of a Au-Cu binary alloy system by SEM and STEM analysis is presented.

  9. Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

    SciTech Connect

    Jhanwar, Prachi; Kumar, Arvind; Rangra, K. J.; Verma, Seema

    2016-04-13

    Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO{sub 2} surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm{sup 2}/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

  10. Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jhanwar, Prachi; Kumar, Arvind; Verma, Seema; Rangra, K. J.

    2016-04-01

    Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm2/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

  11. Nanostructure evolution of magnetron sputtered hydrogenated silicon thin films

    NASA Astrophysics Data System (ADS)

    Adhikari, Dipendra; Junda, Maxwell M.; Marsillac, Sylvain X.; Collins, Robert W.; Podraza, Nikolas J.

    2017-08-01

    Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline, and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure, and RF power) variations on the deposition rate have been qualified. Virtual interface analysis of RTSE data provides nanocrystalline volume fraction depth profiles in the mixed-phase growth regime. GIXRD measurements show the presence of (111) and (220) oriented crystallites. Vibrational mode absorption features from Si-Hn bonding configurations at 590, 640, 2000, and 2090 cm-1 are obtained by ex-situ infrared spectroscopic ellipsometry. Hydrogen incorporation decreases as films transition from amorphous to nanocrystalline phases with increasing hydrogen gas concentration during sputtering.

  12. Magnetron Sputtered Molybdenum Oxide for Application in Polymers Solar Cells

    NASA Astrophysics Data System (ADS)

    Sendova-Vassileva, M.; Dikov, Hr; Vitanov, P.; Popkirov, G.; Gergova, R.; Grancharov, G.; Gancheva, V.

    2016-10-01

    Thin films of molybdenum oxide were deposited by radio frequency (RF) magnetron sputtering in Ar from a MoO3 target at different deposition power on glass and silicon substrates. The thickness of the films was determined by profilometer measurements and by ellipsometry. The films were annealed in air at temperatures between 200 and 400°C in air. The optical transmission and reflection spectra were measured. The conductivity of the as deposited and annealed films was determined. The crystal structure was probed by Raman spectroscopy. The oxidation state of the surface was studied by X-ray photoelectron spectroscopy (XPS) spectroscopy. The deposition technique described above was used to experiment with MoOx as a hole transport layer (HTL) in polymer solar cells with bulk hetrojunction active layer, deposited by spin coating. The performance of these layers was compared with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), which is the standard material used in this role. The measured current-voltage characteristics of solar cells with the structure glass/ITO/HTL/Poly(3-hexyl)thiophene (P3HT):[6,6]-phenyl-C61- butyric acid methyl ester (PCBM)/Al demonstrate that the studied MoOx layer is a good HTL and leads to comparable characteristics to those with PEDOT:PSS. On the other hand the deposition by magnetron sputtering guarantees reliable and repeatable HTLs.

  13. Double circular erosion patterns on dielectric target in magnetron sputtering.

    PubMed

    Suzaki, Yoshifumi; Miyagawa, Hayato; Ejima, Seiki

    2009-10-01

    In rf magnetron sputtering, a circular erosion pattern forms on the surface of a circular metal conductor target with permanent magnets on its back. In this case, the theory behind the erosion pattern has been established. However, in the case of a dielectric target, a double circular erosion pattern is formed. So far, this pattern has been phenomenologically recognized by experimenters; however, it has not yet been investigated. In this study, we performed a magnetron sputtering experiment with a SiO2 dielectric target, and confirmed the formation of a double circular erosion pattern. The dimensions of the double circular erosion pattern varied depending on the insulation resistance or the thickness of the SiO2 target. Furthermore, we found that the dimensions of a double circular erosion pattern changed by making a gap between the SiO2 target and guard ring. Based on the experimental results, we have proposed a qualitative model to explain the formation mechanism of double circular erosion patterns.

  14. Double circular erosion patterns on dielectric target in magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Suzaki, Yoshifumi; Miyagawa, Hayato; Ejima, Seiki

    2009-10-01

    In rf magnetron sputtering, a circular erosion pattern forms on the surface of a circular metal conductor target with permanent magnets on its back. In this case, the theory behind the erosion pattern has been established. However, in the case of a dielectric target, a double circular erosion pattern is formed. So far, this pattern has been phenomenologically recognized by experimenters; however, it has not yet been investigated. In this study, we performed a magnetron sputtering experiment with a SiO2 dielectric target, and confirmed the formation of a double circular erosion pattern. The dimensions of the double circular erosion pattern varied depending on the insulation resistance or the thickness of the SiO2 target. Furthermore, we found that the dimensions of a double circular erosion pattern changed by making a gap between the SiO2 target and guard ring. Based on the experimental results, we have proposed a qualitative model to explain the formation mechanism of double circular erosion patterns.

  15. Gas-phase clusterization of zinc during magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Abduev, A. Kh.; Akhmedov, A. K.; Asvarov, A. Sh.; Alikhanov, N. M.-R.; Emirov, R. M.; Muslimov, A. E.; Belyaev, V. V.

    2017-01-01

    The processes of gas-phase clusterization of zinc during dc magnetron sputtering of a zinc target in an argon atmosphere have been investigated. The influence of the working gas pressure and magnetron discharge current on the morphology and structure of the precipitates formed on substrates previously cooled to-50°C is studied. It is shown that dense textured (002)Zn layers with a columnar structure are formed at relatively low argon pressures in the chamber ( P = 0.5 Pa) and low discharge currents (100 mA). X-ray amorphous deposits with a fractal coral-like structure arise on substrates at an extremely high argon pressure in the chamber ( P = 5 Pa). An increase in the magnetron discharge current at an operating gas pressure of 5 Pa leads to the formation of polycrystalline layers on substrates; the intensity of the XRD peaks related to crystalline zinc increases with an increase in the discharge current. Possible mechanisms of the structural transformation of Zn deposits are considered.

  16. Ionized magnetron sputtering of aluminum(,2)oxygen(,3)

    NASA Astrophysics Data System (ADS)

    Gonzalez, Patrick Fernando

    2000-10-01

    This dissertation shows a detailed study of the conditions necessary for sputtering alumina using a novel variant of ionized magnetron sputtering (IMS) first demonstrated by Yamashita et. al. The study presented herein leverages concurrent research at our laboratory on high density plasmas, plasma characterization and charged particle beams research to demonstrate a new source capable of sputtering hydrated alumina films at high rates. High quality ceramics such as Al2O3 find uses in a variety of applications, and in particular, for mass storage applications. Consequently, there exists an ever-growing need to provide and improve the capability of growing thick insulating films. Ideally, the insulating film should be stoichiometric and able to be grown at rates high enough to be easily manufacturable. Alumina is a particularly attractive due to its high density, Na barrier properties, and stability and radiation resistance. However, high quality films are often difficult to achieve with conventional RF plasma due to extremely slow deposition rates and difficulties associated with system cooling. The preferred method is to reactively sputter Al from a solid target in an O2 ambient. Nevertheless, this process is inherently unstable and leads to arcing and uneven target wear when magnetrons are used. In this study, we build the sputtering source, evaluate, and maximize the deposition characteristics of alumina films sputtered from a solid target in an Ar/O2 ambient. Semi-crystalline (kappa + theta) alumina has been reported using a similar technique at temperatures as low 370 C. The difference in the system used herein is that RF power is used for both, the inductive and capacitive components. Additionally, we use a solid target made of sintered alumina throughout the experiment. A model is developed using regression analysis and compared to results obtained. Because plasma parameters can interact with each other, we explore ICP/CCP power interactions and gas influence

  17. Large area precision optical coatings by pulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Frach, Peter; Gloess, Daniel; Goschurny, Thomas; Drescher, Andy; Hartung, Ullrich; Bartzsch, Hagen; Heisig, Andreas; Grune, Harald; Leischnig, Lothar; Leischnig, Steffen; Bundesmann, Carsten

    2017-05-01

    Pulse magnetron sputtering is very well suited for the deposition of optical coatings. Due to energetic activation during film growth, sputtered films are dense, smooth and show an excellent environmental stability. Films of materials like SiO2, Al2O3, Nb2O5 or Ta2O5 can be produced with very little absorption and scattering losses and are well suited for precision optics. FEP's coating plant PreSensLine, a deposition machine dedicated for the development and deposition of precision optical layer systems will be presented. The coating machine (VON ARDENNE) is equipped with dual magnetron systems (type RM by FEP). Concepts regarding machine design, process technology and process control as well as in situ monitoring are presented to realize the high demands on uniformity, accuracy and reproducibility. Results of gradient and multilayer type precision optical coatings are presented. Application examples are edge filters and special antireflective coatings for the backlight of 3D displays with substrate size up to 300 x 400mm. The machine allows deposition of rugate type gradient layers by rotating a rotary table with substrates between two sources of the dual magnetron system. By combination of the precision drive (by LSA) for the substrate movement and a special pulse parameter variation during the deposition process (available with the pulse unit UBS-C2 of FEP), it is possible to adjust the deposition rate as a function of the substrate position exactly. The aim of a current development is a technology for the uniform coating of 3D-substrates and freeform components as well as laterally graded layers.

  18. Deposition and characterization of magnetron sputtered bcc tantalum

    NASA Astrophysics Data System (ADS)

    Patel, Anamika

    The goal of this thesis was to provide scientific and technical research results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited by DC magnetron sputtering. Deposition of tantalum on steel is of special interest for the protection it offers to surfaces, e.g. the surfaces of gun barrels against the erosive wear of hot propellant gases and the mechanical damage caused by the motion of launching projectiles. Electro-plated chromium is presently most commonly used for this purpose; however, it is considered to be carcinogenic in its hexavalent form. Tantalum is being investigated as non-toxic alternative to chromium and also because of its superior protective properties in these extreme environments. DC magnetron sputtering was chosen for this investigation of tantalum coatings on steel substrates because it is a versatile industrial proven process for deposition of metals. Sputter deposited Ta films can have two crystallographic structures: (1) body center cubic (bcc) phase, characterized by high toughness and high ductility and (2) a tetragonal beta phase characterized by brittleness and a tendency to fail under stress. It was found in this work that the bcc Ta coatings on steel can be obtained reliably by either of two methods: (1) depositing Ta on a submicron, stoichiometric TaN seed layer reactively sputtered on unheated steel and (2) depositing Ta directly on steel heated above a critical temperature. For argon sputtering gas this critical temperature was found to be 400°C at a pressure of 5 mtorr. With the heavier krypton gas, this critical temperature is reduced to 350°C. X-ray diffraction (XRD) was used to investigate the structure of tantalum and nitride films, and the composition of the nitride films was measured by nuclear reaction analyses (NRA), which were used to study in detail the enhancement of the bcc phase of Ta on steel. The scratch adhesion tests performed with a diamond hemispherical tip of radius 200 mum

  19. Reactive pulsed magnetron-sputtered tantalum oxide thin films

    NASA Astrophysics Data System (ADS)

    Nielsen, Matthew Christian

    Current high speed, advanced packaging applications require the use of integrated capacitors. Tantalum oxide is one material currently being considered for use in the capacitors; however, the deposition technique used to make the thin film dielectric can alter its performance. Pulsed magnetron reactive sputtering was investigated in this thesis as it offers a robust, clean, and low temperature deposition alternative. This is a new deposition technique created to control the negative effects of target poisoning; however, to understand the relationships between the deposition variables and the resultant film properties a thorough investigation is needed. The instantaneous voltage at the target was captured using a high speed digital oscilloscope. Three target oxidation states were imaged and identified to be that of the metallic and oxidized states with an abrupt transition region separating the two. Using high resolution X-ray photoelectron spectroscopy the bonding present in the deposited films was correlated to the oxidation state of the target. While operating the target in the metallic mode, a mix of oxidized, sub-oxide and metallic states were discovered. Alternatively, the bonding present in the films deposited when the target was in the oxidized state were that of fully oxidized tantalum pentoxide. The films deposited above the critical partial pressure demonstrated excellent leakage current densities. The exact magnitude of the leakage current density inversely scaled to the relative amount of oxygen included into the sputtering atmosphere. Detailed plot analysis showed that there were two different conduction mechanisms controlling the current flow in the capacitors. High frequency test vehicles were measured up to 10 GHz in order to determine the frequency response of the dielectric material. A circuit equivalent model describing the testing system and samples was created and utilized to fit the collected data. Overall, the technique of pulsed magnetron

  20. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-08-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  1. Anisotropies in magnetron sputtered carbon nitride thin films

    NASA Astrophysics Data System (ADS)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    2001-04-01

    Carbon nitride CNx (0⩽x⩽0.35) thin films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges have been studied with respect to microstructure using electron microscopy, and elastic modulus using nanoindentation and surface acoustic wave analyses. For growth temperature of 100 °C, the films were amorphous, and with an isotropic Young's modulus of ˜170-200 GPa essentially unaffected by the nitrogen fraction. The films grown at elevated temperatures (350-550 °C) show anisotropic mechanical properties due to a textured microstructure with standing basal planes, as observed from measuring the Young's modulus in different directions. The modulus measured in the plane of the film was ˜60-80 GPa, while in the vertical direction the modulus increased considerably from ˜25 to ˜200 GPa as the nitrogen content was increased above ˜15 at. %.

  2. Influence of RF power on magnetron sputtered AZO films

    SciTech Connect

    Agarwal, Mohit; Modi, Pankaj; Dusane, R. O.

    2013-02-05

    Al-doped Zinc Oxide (AZO) transparent conducting films are prepared on glass substrate by RF magnetron sputtering under different RF power with a 3 inch diameter target of 2 wt%Al{sub 2}O{sub 3} in zinc oxide. The effect of RF power on the structural, optical and electrical properties of AZO films was investigated by X-ray Diffraction (XRD), Hall measurement and UV-Visible spectrophotometry. The XRD data indicates a preferential c-axis orientation for all the films. All films exhibit high transmittance (<90%) in visible region. Films deposited at 60 W power exhibit lowest resistivity of 5.7 Multiplication-Sign 10{sup -4}{omega}cm. Such low-resistivity and high-transmittance AZO films when prepared using low RF power at room temperature could find important applications in flexible electronics.

  3. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    SciTech Connect

    Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.; Adámek, J.

    2014-10-15

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  4. Characterization on RF magnetron sputtered niobium pentoxide thin films

    SciTech Connect

    Usha, N.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Niobium pentoxide (Nb{sub 2}O{sub 5}) thin films with amorphous nature were deposited on microscopic glass substrates at 100°C by rf magnetron sputtering technique. The effect of rf power on the structural, morphological, optical, and vibrational properties of Nb{sub 2}O{sub 5} films have been investigated. Optical study shows the maximum average transmittance of about 87% and the optical energy band gap (indirect allowed) changes between 3.70 eV and 3.47 eV. AFM result indicates the smooth surface nature of the samples. Photoluminescence measurement showed the better optical quality of the deposited films. Raman spectra show the LO-TO splitting of Nb-O stretching of Nb{sub 2}O{sub 5} films.

  5. Inverted cylindrical magnetron sputtering for HTSC thin film growth

    NASA Astrophysics Data System (ADS)

    Geerk, Jochen; Linker, G.; Meyer, O.; Ratzel, F.; Reiner, J.; Remmel, J.; Kroener, T.; Henn, R.; Massing, S.; Brecht, E.

    1992-03-01

    The conditions and quality of '1-2-3' films manufactured by inverted cylindrical magnetron sputtering (ICMS) are studied with attention given to a-axis films. The geometry of the ICMS technique eliminates ion bombardment of the substrate, and the technique is reproducible allowing systematic studies of film growth as functions of film thickness, substrate materials, and buffer layers. Film-growth direction and quality are studied with X-ray diffraction, ion-beam backscattering, and channeling. Substrate temperature is shown to be the most significant experimental parameter in the manufacture of the 1-2-3 system. Low substrate temperatures insure the growth of the a-axis configuration, and the yttrium-stabilized zirconia buffer layer is found to be of use in developing 1-2-3 films. Also reported in this paper is the growth of thin films of Bi-related HTSC compounds and the conditions for such growth.

  6. RF magnetron sputtering of thick platinum coatings on glass microspheres

    SciTech Connect

    Meyer, S.F.; Hsieh, E.J.; Burt, R.J.

    1980-05-28

    Thick platinum coatings on glass microspheres are needed for proposed Laser Fusion targets. The spherical nature of these substrates coupled with the small dimensions (approx. 100 ..mu..m OD) make it difficult to achieve a smooth and uniform coating. Coating problems encountered include a rough surface and porous microstructure from the oblique incidence and lack of temperature and bias control, clumping of the microspheres causing non-uniformities, and particle accumulation causing cone defects. Sputtering parameters significantly affecting the coatings include total pressure, DC substrate bias, and the addition of doping gases. Using an ultrasonic vibrating screened cage and RF magnetron Sputtergun, we have successfully batch coated microspheres with up to 6 ..mu..m of Pt, with a surface roughness of 200 nm, thickness non-concentricity of 300 nm, and density greater than 98% of bulk Pt.

  7. Pd-catalysts for DFAFC prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Bieloshapka, I.; Jiricek, P.; Vorokhta, M.; Tomsik, E.; Rednyk, A.; Perekrestov, R.; Jurek, K.; Ukraintsev, E.; Hruska, K.; Romanyuk, O.; Lesiak, B.

    2017-10-01

    Samples of a palladium catalyst for direct formic acid fuel cell (DFAFC) applications were prepared on the Elat® carbon cloth by magnetron sputtering. The quantity of Pd was equal to 3.6, 120 and 720 μg/cm2. The samples were tested in a fuel cell for electro-oxidation of formic acid, and were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The XPS measurements revealed a high contribution of PdCx phase formed at the Pd/Elat® surface interface, with carbon concentration in PdCx from x = 9.9-14.6 at.%, resulting from the C substrate and CO residual gases. Oxygen groups, e.g. hydroxyl (-OH), carbonyl (Cdbnd O) and carboxyl (COOH), resulted from the synthesis conditions due to the presence of residual gases, electro-oxidation during the reaction and oxidation in the atmosphere. Because of the formation of CO and CO2 on the catalysts during the reaction, or because of poisoning by impurities containing the -CH3 group, together with the risk of Pd losses due to dissolution in formic acid, there was a negative effect of catalyst degradation on the active area surface. The effect of different loadings of Pd layers led to increasing catalyst efficiency. Current-voltage curves showed that different amounts of catalyst did not increase the DFAFC power to a great extent. One reason for this was the catalyst structure formed on the carbon cloth. AFM and SEM measurements showed a layer-by-layer growth with no significant variations in morphology. The results for electric power recalculated for the Pd loading per 1 mg of catalyst layers in comparison to carbon substrates decorated by Pd nanoparticles showed that there is potential for applying anodes for formic acid fuel cells prepared by magnetron sputtering.

  8. Magnetron sputtered nanostructured cadmium oxide films for ammonia sensing

    SciTech Connect

    Dhivya, P.; Prasad, A.K.; Sridharan, M.

    2014-06-01

    Nanostructured cadmium oxide (CdO) films were deposited on to glass substrates by reactive dc magnetron sputtering technique. The depositions were carried out for different deposition times in order to obtain films with varying thicknesses. The CdO films were polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction as observed by X-ray diffraction (XRD). Field-emission scanning electron microscope (FE-SEM) micrographs showed uniform distribution of grains of 30–35 nm size and change in morphology from spherical to elliptical structures upon increasing the film thickness. The optical band gap value of the CdO films decreased from 2.67 to 2.36 eV with increase in the thickness. CdO films were deposited on to interdigitated electrodes to be employed as ammonia (NH{sub 3}) gas sensor. The fabricated CdO sensor with thickness of 294 nm has a capacity to detect NH{sub 3} as low as 50 ppm at a relatively low operating temperature of 150 °C with quick response and recovery time. - Highlights: • Nanostructured CdO films were deposited on to glass substrates using magnetron sputtering. • Deposition time was varied in order to obtain films with different thicknesses. • The CdO films were polycrystalline in nature with preferred orientation along (1 1 1) direction. • The optical bandgap values of the films decreased on increasing the thickness of the films. • CdO films with different thickness such as 122, 204, 294 nm was capable to detect NH{sub 3} down to 50 ppm at operating temperature of 150 °C.

  9. Plasma potential mapping of high power impulse magnetron sputtering discharges

    SciTech Connect

    Rauch, Albert; Mendelsberg, Rueben J.; Sanders, Jason M.; Anders, Andre

    2011-12-20

    Pulsed emissive probe techniques have been used to determine the plasma potential distribution of high power impulse magnetron sputtering (HiPIMS) discharges. An unbalanced magnetron with a niobium target in argon was investigated for pulse length of 100 μs at a pulse repetition rate of 100 Hz, giving a peak current of 170 A. The probe data were taken with a time resolution of 20 ns and a spatial resolution of 1 mm. It is shown that the local plasma potential varies greatly in space and time. The lowest potential was found over the target’s racetrack, gradually reaching anode potential (ground) several centimeters away from the target. The magnetic pre-sheath exhibits a funnel-shaped plasma potential resulting in an electric field which accelerates ions toward the racetrack. In certain regions and times, the potential exhibits weak local maxima which allow for ion acceleration to the substrate. Knowledge of the local E and static B fields lets us derive the electrons’ E×B drift velocity, which is about 105 m/s and shows structures in space and time.

  10. Asymmetric particle fluxes from drifting ionization zones in sputtering magnetrons

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Franz, Robert; Anders, André

    2014-04-01

    Electron and ion fluxes from direct current and high-power impulse magnetron sputtering (dcMS and HiPIMS) plasmas were measured in the plane of the target surface. Biased collector probes and a particle energy and mass analyzer showed asymmetric emission of electrons and of singly and doubly charged ions. For both HiPIMS and dcMS discharges, higher fluxes of all types of particles were observed in the direction of the electrons' E × B drift. These results are put in the context with ionization zones that drift over the magnetron's racetrack. The measured currents of time-resolving collector probes suggest that a large fraction of the ion flux originates from drifting ionization zones, while energy-resolving mass spectrometry indicates that a large fraction of the ion energy is due to acceleration by an electric field. This supports the recently proposed hypothesis that each ionization zone is associated with a negative-positive-negative space charge structure, thereby producing an electric field that accelerates ions from the location where they were formed.

  11. Plasma potential mapping of high power impulse magnetron sputtering discharges

    SciTech Connect

    Rauch, Albert; Mendelsberg, Rueben J.; Sanders, Jason M.; Anders, Andre

    2012-04-15

    Pulsed emissive probe techniques have been used to determine the plasma potential distribution of high power impulse magnetron sputtering (HiPIMS) discharges. An unbalanced magnetron with a niobium target in argon was investigated for a pulse length of 100 {mu}s at a pulse repetition rate of 100 Hz, giving a peak current of 170 A. The probe data were recorded with a time resolution of 20 ns and a spatial resolution of 1 mm. It is shown that the local plasma potential varies greatly in space and time. The lowest potential was found over the target's racetrack, gradually reaching anode potential (ground) several centimeters away from the target. The magnetic presheath exhibits a funnel-shaped plasma potential resulting in an electric field which accelerates ions toward the racetrack. In certain regions and times, the potential exhibits weak local maxima which allow for ion acceleration to the substrate. Knowledge of the local E and static B fields lets us derive the electrons'ExB drift velocity, which is about 10{sup 5} m/s and shows structures in space and time.

  12. Magnetron sputtered WS2; optical and structural analysis

    NASA Astrophysics Data System (ADS)

    Koçak, Y.; Akaltun, Y.; Gür, Emre

    2016-04-01

    Remarkable properties of graphene have renewed interest in inorganic, Transition Metal Dichalgogenits (TMDC) due to unique electronic and optical properties. TMDCs such as MoS2, MoSe2, WS2 and WSe2 have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as solar cells, transistors, photodetectors and electroluminescent devices in which the graphene is not actively used. So, fabrication and analysis of these films are important for new generation devices. In this work, polycrystalline WS2 films were grown by radio frequency magnetron sputtering (RFMS) on different substrates like n-Si(100), n-Si(111), p-Si(100), glass and fused silica. Structural, morphological, optical and electrical properties were investigated as a function of film thickness and RF power. From XRD analysis, signals from planes of (002), (100), (101), (110), (008) belong to the hegzagonal WS2 were obtained. Raman spectra of the WS2 show that there are two dominant peaks at ~351 cm-1 (in-plane phonon mode) and ~417 cm-1 (out-of-plane phonon mode). XPS analysis of the films has shown that binding energy and the intensity of tungsten 4f shells shifts by depending on the depth of the films which might be due to the wellknown preferential sputtering.

  13. Chromium-nanodiamond coatings obtained by magnetron sputtering and their tribological properties

    NASA Astrophysics Data System (ADS)

    Atamanov, M. V.; Khrushchov, M. M.; Marchenko, E. A.; Shevchenko, N. V.; Levin, I. S.; Petrzhik, M. I.; Miroshnichenko, V. I.; Relianu, M. D.

    2017-07-01

    Peculiarities of structure, chemical and phase composition, micromechanical and tribological properties of chromium-based coatings obtained by magnetron-sputtering of composite and/or compacted chromium-nanodiamond targets have been investigated.

  14. Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

    DOE PAGES

    Anders, André

    2017-03-21

    High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron

  15. BN coatings deposition by magnetron sputtering of B and BN targets in electron beam generated plasma

    NASA Astrophysics Data System (ADS)

    Kamenetskikh, A. S.; Gavrilov, N. V.; Koryakova, O. V.; Cholakh, S. O.

    2017-05-01

    Boron nitride coatings were deposited by reactive pulsed magnetron sputtering of B and BN targets (50 kHz, 10 µs for B; 13.56 MHz for BN) at 2-20 mA/cm2 ion current density on the substrate. The effect of electron beam generated plasma on characteristics of magnetron discharge and phase composition of coatings was studied.

  16. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Yuan, Xiaohong; Xu, Wenzheng; Huang, Fenglin; Chen, Dongsheng; Wei, Qufu

    2016-12-01

    Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag2O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  17. Particle-balance models for pulsed sputtering magnetrons

    NASA Astrophysics Data System (ADS)

    Huo, Chunqing; Lundin, D.; Gudmundsson, J. T.; Raadu, M. A.; Bradley, J. W.; Brenning, N.

    2017-09-01

    The time-dependent plasma discharge ionization region model (IRM) has been under continuous development during the past decade and used in several studies of the ionization region of high-power impulse magnetron sputtering (HiPIMS) discharges. In the present work, a complete description of the most recent version of the IRM is given, which includes improvements, such as allowing for returning of the working gas atoms from the target, a separate treatment of hot secondary electrons, addition of doubly charged metal ions, etc. To show the general applicability of the IRM, two different HiPIMS discharges are investigated. The first set concerns 400 μs long discharge pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The second set focuses on 100 μs long discharge pulses applied to a Ti target in an Ar atmosphere at 0.54 Pa, and explores the effects of varying the magnetic field strength. The model results show that Al2+ -ions contribute negligibly to the production of secondary electrons, while Ti2+ -ions effectively contribute to the production of secondary electrons. Similarly, the model results show that for an argon discharge with Al target the contribution of Al+-ions to the discharge current at the target surface is over 90% at 800 V. However, at 400 V the Al+-ions and Ar+-ions contribute roughly equally to the discharge current in the initial peak, while in the plateau region Ar+-ions contribute to roughly \\frac{2}{3} of the current. For high currents the discharge with Al target develops almost pure self-sputter recycling, while the discharge with Ti target exhibits close to a 50/50 combination of self-sputter recycling and working gas-recycling. For a Ti target, a self-sputter yield significantly below unity makes working gas-recycling necessary at high currents. For the discharge with Ti target, a decrease in the B-field strength, resulted in a corresponding stepwise increase in the discharge resistivity.

  18. The bioactivity mechanism of magnetron sputtered bioglass thin films

    NASA Astrophysics Data System (ADS)

    Berbecaru, C.; Stan, G. E.; Pina, S.; Tulyaganov, D. U.; Ferreira, J. M. F.

    2012-10-01

    Smooth and adherent bioactive coatings with ∼0.5 μm thickness were deposited onto Si substrates by the radiofrequency-magnetron sputtering method at 150 °C under 0.4 Pa of Ar atmosphere using a bioglass powder as target with a composition in the SiO2-CaO-MgO-P2O5-CaF2-B2O3-Na2O system. The bioactivity of the as-prepared bioglass samples was assessed by immersion in simulated body fluid for different periods of time up to 30 days. Grazing incidence X-ray diffraction, Fourier transform infra-red spectrometry and energy dispersive spectroscopy revealed that important structural and compositional changes took place upon immersing the samples in SBF. Whilst the excellent biomineralisation capability of the BG thin films was demonstrated by the in vitro induction of extensive and homogenous crystalline hydroxyapatite in-growths on their surfaces, a series of bioactivity process kinetics peculiarities (derogations from the classical model) were emphasised and thoroughly discussed.

  19. Magnetron-sputtered Be coatings as reflectors for ultracold neutrons

    NASA Astrophysics Data System (ADS)

    Bryś, T.; Daum, M.; Fierlinger, P.; Fomin, A.; Geltenbort, P.; Henneck, R.; Kirch, K.; Kharitonov, A.; Krasnoshekova, I.; Kuźniak, M.; Lasakov, M.; Pichlmaier, A.; Raimondi, F.; Schelldorfer, R.; Serebrov, A.; Siber, E.; Tal'daev, R.; Varlamov, V.; Vasiliev, A.; Wambach, J.; Zherebtsov, O.

    2005-10-01

    We describe the production, characterization and performance of magnetron-sputtered Be coatings on aluminum, copper and stainless steel substrates. The coating thickness is typically 300 nm. Small samples were characterized by means of Optical Microscopy (OM), Atomic Force Microscopy (AFM) and X-ray induced Photoelectron Spectroscopy (XPS) and Elastic Recoil Detection Analysis (ERDA). The coating quality and adhesion following thermal cycling and neutron irradiation were tested with respect to future applications as storage containers in Ultracold Neutron (UCN) sources. The fractional uncoated area was determined to be 10 -4 to 10 -5 by OM and XPS. These results were confirmed by foil transmission measurements with UCN in the energy range 180 to 230 neV. The storage time of a 250 l Be-coated Cu container was determined for UCN energies up to 60 neV at room temperature and around 90 K and the wall loss factor η extracted. We obtained η (90 K)=2.7×10 -5 and η(300 K)=1.1×10 -4 in good agreement with previously published results.

  20. Synthesis of Alumina Thin Films Using Reactive Magnetron Sputtering Method

    NASA Astrophysics Data System (ADS)

    Angarita, G.; Palacio, C.; Trujillo, M.; Arroyave, M.

    2017-06-01

    Alumina (Al2O3) thin films were deposited on Si (100) by Magnetron Sputtering in reactive conditions between an aluminium target and oxygen 99.99% pure. The plasma was formed employing Argon with an R.F power of 100 W, the dwelling time was 3 hours. 4 samples were produced with temperatures between 350 and 400 ºC in the substrate by using an oxygen flow of 2 and 8 sccm, the remaining parameters of the process were fixed. The coatings and substrates were characterized using Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and Energy Dispersive Spectroscopy (EDS) in order to compare their properties before and after deposition. The films thicknesses were between 47 and 70 nm. The results show that at high oxygen flow the alumina structure prevails in the coatings while at lower oxygen flow only aluminum is deposited in the coatings. It was shown that the temperature increases grain size and roughness while decreasing the thicknesses of the coatings.

  1. Fabrication of oriented hydroxyapatite film by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hirata, Keishiro; Kubota, Takafumi; Koyama, Daisuke; Takayanagi, Shinji; Matsukawa, Mami

    2017-08-01

    Hydroxyapatite (HAp) is compatible with bone tissue and is used mainly as a bone prosthetic material, especially as the coating of implants. Oriented HAp film is expected to be a high-quality epitaxial scaffold of the neonatal bone. To fabricate highly oriented HAp thin films via the conventional plasma process, we deposited the HAp film on a Ti coated silica glass substrate using RF magnetron sputtering in low substrate temperature conditions. The X-ray diffraction pattern of the film sample consisted of an intense (002) peak, corresponding to the highly oriented HAp. The (002) peak in XRD diagrams can be attributed either to the monoclinic phase or the hexagonal phase. Pole figure analysis showed that the (002) plane grew parallel to the surface of the substrate, without inclination. Transmission Electron Microscope analysis also showed the fabrication of aligned HAp crystallites. The selected area diffraction patterns indicated the existence of monoclinic phase. The existence of hexagonal phase could not be judged. These results indicate the uniaxial films fabricated by this technique enable to be the epitaxial scaffold of the neonatal bone. This scaffold can be expected to promote connection with the surrounding bone tissue and recovery of the dynamic characteristics of the bone.

  2. Fabrication of multilayered Ge nanocrystals by magnetron sputtering and annealing.

    PubMed

    Gao, Fei; Green, Martin A; Conibeer, Gavin; Cho, Eun-Chel; Huang, Yidan; Pere-Wurfl, Ivan; Flynn, Chris

    2008-11-12

    Multilayered Ge nanocrystals embedded in Si and Ge oxide films have been fabricated on Si substrate by a (SiO(2)+Ge)/(SiO(2)+GeO(2)) superlattice approach, using an rf magnetron sputtering technique with a Ge+SiO(2) composite target and subsequent thermal annealing in N(2) ambient at 750 °C for 5 min. X-ray diffraction (XRD) measurements indicated the formation of Ge nanocrystals with an average size estimated to be 9.8 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode shifted downwards to 298.8 cm(-1), which was caused by quantum confinement of phonons in the Ge nanocrystals. X-ray photoemission spectroscopy (XPS) analysis demonstrated that the Ge chemical state is mainly Ge(0) in the (SiO(2)+Ge) layer and Ge(4+) in the (SiO(2)+GeO(2)) layer in the superlattice structure. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (SiO(2)+Ge) layers, and had good crystallinity. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction compared with the conventional Ge-ncs fabrication method using a single and thick SiO(2) matrix film.

  3. Photoluminescence observation from zinc oxide formed by magnetron sputtering at room temperature

    NASA Astrophysics Data System (ADS)

    Kudryashov, D.; Babichev, A.; Nikitina, E.; Gudovskikh, A.; Kladko, P.

    2015-11-01

    The photoluminescence (PL) of ZnO thin films grown by magnetron sputtering at room temperature has been observed. The PL spectra were measured using an instrument from Accent Optical Technologies with a solid state UV laser (λ = 266 nm) as the pumping source and at the temperature of 300 K. Samples grown at sputtering power of 100-200 W show a strong photoluminescence (PL) at wavelength of 377 nm and its intensity shows non-linear dependence with magnetron power. At values of sputtering power less then 100 W PL signal was not observed. A correlation between PL, XRD intensity and ZnO grain size was shown.

  4. Post Magnetron Sputter And Reactive Sputter Coating Of Contoured Glass, Acrylic And Polycarbonate Substrates

    NASA Astrophysics Data System (ADS)

    Wright, Michael P.

    1985-12-01

    A Post Magnetron Sputter concept employing a cylindrical internally cooled target (cathode) is described. The use of an internal, rotating, permanent magnetic field resulting in 360° utilisation of the target material is outlined. Computer controlled horizontal and vertical movement of the cathode assembly facilitates the coating of contoured substrates which may be glass, acrylic or polycarbonate. Deposition of different metals is easily achieved by changing the cathode or covering it with a suitable sheath material. The design of the cathode results in economic utilisation of the target material, which is particularly important when sputtering expensive metals such as gold. In addition to the deposition of metallic films, such as stainless steel or chrome, reactive sputtering may be undertaken by the introduction of a reactive gas into the vacuum chamber. In this way metal oxide, sulphide or nitride layers may be deposited according to the requirements of the layer structure. Specific optically-active oxides such as indium tin oxide are easily deposited in a uniform film and the formation of multilayer coatings for sun protective and heat rejecting applications is practicable. Indeed, a complete process may be undertaken without removing the substrate from the chamber; merely by adding or changing the reactive gas present.

  5. Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kubart, T.; Aijaz, A.

    2017-05-01

    The interaction between pulsed plasmas and surfaces undergoing chemical changes complicates physics of reactive High Power Impulse Magnetron Sputtering (HiPIMS). In this study, we determine the dynamics of formation and removal of a compound on a titanium surface from the evolution of discharge characteristics in an argon atmosphere with nitrogen and oxygen. We show that the time response of a reactive process is dominated by surface processes. The thickness of the compound layer is several nm and its removal by sputtering requires ion fluence in the order of 1016 cm-2, much larger than the ion fluence in a single HiPIMS pulse. Formation of the nitride or oxide layer is significantly slower in HiPIMS than in dc sputtering under identical conditions. Further, we explain very high discharge currents in HiPIMS by the formation of a truly stoichiometric compound during the discharge off-time. The compound has a very high secondary electron emission coefficient and leads to a large increase in the discharge current upon target poisoning.

  6. Characterization of high power impulse magnetron sputtering discharges

    NASA Astrophysics Data System (ADS)

    Hala, Matej

    Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

  7. [Spectrum diagnostics for optimization of experimental parameters in thin films deposited by magnetron sputtering].

    PubMed

    Guo, Qing-Lin; Cui, Yong-Liang; Chen, Jian-Hui; Zhang, Jin-Ping; Huai, Su-Fang; Liu, Bao-Ting; Chen, Jin-Zhong

    2010-12-01

    The plasma emission spectra generated during the deposition process of Si-based thin films by radio frequency (RF) magnetron sputtering using Cu and Al targets in an argon atmosphere were acquired by the plasma analysis system, which consists of a magnetron sputtering apparatus, an Omni-lambda300 series grating spectrometer, a CCD data acquisition system and an optical fiber transmission system. The variation in Cu and Al plasma emission spectra intensity depending on sputtering conditions, such as sputtering time, sputtering power, the target-to-substrate distance and deposition pressure, was studied by using the analysis lines Cu I 324. 754 nm, Cu I 327. 396 nm, Cu I 333. 784 nm, Cu I 353. 039 nm, Al I 394. 403 nm and Al I 396. 153 nm. Compared with the option of experimental parameters of thin films deposited by RF magnetron sputtering, it was shown that emission spectra analysis methods play a guiding role in optimizing the deposition conditions of thin films in RF magnetron sputtering.

  8. Modeling of the Reactive High Power Impulse Magnetron Sputtering (HiPIMS) process

    NASA Astrophysics Data System (ADS)

    Gudmundsson, Jon Tomas; Lundin, Daniel; Raadu, Michael; Brenning, Nils; Minea, Tiberiu

    2015-09-01

    Reactive high power impulse magnetron sputtering (HiPIMS) provides both a high ionization fraction of the sputtered material and a high dissociation fraction of the molecular gas. We demonstrate this through an ionization region model (IRM) of the reactive Ar/O2 HiPIMS discharge with a titanium target. We explore the influence of oxygen dilution on the discharge properties such as electron density, the ionization fraction of the sputtered vapor and the oxygen dissociation fraction. We discuss the important processes and challenges for more detailed modeling of the reactive HiPIMS discharge. Furthermore, we discuss experimental observations during reactive high power impulse magnetron sputtering sputtering (HiPIMS) of Ti target in Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on the reactive gas flow rate, pulse repetition frequency and discharge voltage. The discharge current increases with decreasing repetition frequency and increasing flowrate of the reactive gas.

  9. Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

    SciTech Connect

    Anders, Andre

    2008-05-19

    Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases {approx}Q{sup 1/2}, whereas the rate normalized to the average power decreases {approx}Q{sup -1/2}, with Q being the mean ion charge state number.

  10. Studies of aluminium coatings deposited by vacuum evaporation and magnetron sputtering.

    PubMed

    Garbacz, H; Wieciński, P; Adamczyk-Cieślak, B; Mizera, J; Kurzydłowski, K J

    2010-03-01

    The paper presents the results of investigations of the microstructures and properties of the aluminium coatings deposited by vacuum evaporation and magnetron sputtering. These coatings generally have a very refined microstructure with elongated nano-grains. However, the surface topography of the aluminium coating deposited by vacuum evaporation is more developed, its microstructure is less homogeneous and more porous. The residual tensile stresses in the aluminium coating deposited by magnetron sputtering are close to 130 MPa, and the texture is relatively pronounced. Vacuum evaporation does not induce residual stresses in the coatings and the texture is very weak. The results obtained indicate that the aluminium coatings produced by magnetron sputtering are more suitable for the diffusive Ti-Al intermetallic layers.

  11. On the electron energy in the high power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Sigurjonsson, P.; Larsson, P.; Lundin, D.; Helmersson, U.

    2009-06-15

    The temporal variation of the electron energy distribution function (EEDF) was measured with a Langmuir probe in a high power impulse magnetron sputtering (HiPIMS) discharge at 3 and 20 mTorr pressures. In the HiPIMS discharge a high power pulse is applied to a planar magnetron giving a high electron density and highly ionized sputtered vapor. The measured EEDF is Maxwellian-like during the pulse; it is broader for lower discharge pressure and it becomes narrower as the pulse progresses. This indicates that the plasma cools as the pulse progresses, probably due to high metal content of the discharge.

  12. Facility for combined in situ magnetron sputtering and soft x-ray magnetic circular dichroism

    SciTech Connect

    Telling, N. D.; Laan, G. van der; Georgieva, M. T.; Farley, N. R. S.

    2006-07-15

    An ultrahigh vacuum chamber that enables the in situ growth of thin films and multilayers by magnetron sputtering techniques is described. Following film preparation, x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements are performed by utilizing an in vacuum electromagnet. XMCD measurements on sputtered thin films of Fe and Co yield spin and orbital moments that are consistent with those obtained previously on films measured in transmission geometry and grown in situ by evaporation methods. Thin films of FeN prepared by reactive sputtering are also examined and reveal an apparent enhancement in the orbital moment for low N content samples. The advantages of producing samples for in situ XAS and XMCD studies by magnetron sputtering are discussed.

  13. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    SciTech Connect

    Gudmundsson, J. T.; Lundin, D.; Minea, T. M.; Stancu, G. D.; Brenning, N.

    2015-11-15

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.

  14. Modular deposition chamber for in situ X-ray experiments during RF and DC magnetron sputtering.

    PubMed

    Krause, Bärbel; Darma, Susan; Kaufholz, Marthe; Gräfe, Hans Hellmuth; Ulrich, Sven; Mantilla, Miguel; Weigel, Ralf; Rembold, Steffen; Baumbach, Tilo

    2012-03-01

    A new sputtering system for in situ X-ray experiments during DC and RF magnetron sputtering is described. The outstanding features of the system are the modular design of the vacuum chamber, the adjustable deposition angle, the option for plasma diagnostics, and the UHV sample transfer in order to access complementary surface analysis methods. First in situ diffraction and reflectivity measurements during RF and DC deposition of vanadium carbide demonstrate the performance of the set-up.

  15. Comprehensive computer model for magnetron sputtering. I. Gas heating and rarefaction

    SciTech Connect

    Jimenez, Francisco J.; Dew, Steven K.

    2012-07-15

    The complex interaction between several variables in magnetron sputtering discharges is a challenge in developing engineering design tools for industrial applications. For instance, at high pressures, rarefaction and gas heating should no longer be neglected for determining several parameters of the process. In this article, we use a comprehensive 3D reactor-scale simulator that incorporates most phenomena of interest in a self-consistent manner to simulate the transport of sputtered particles over a wide range of pressures and powers. Calculations of aluminum deposition rates and metal vapor densities are in reasonable agreement with experiments over a wide range of pressures and powers. Of the elements investigated (Al, Ti, and Cu), copper showed the greatest rarefaction (30%) due to its higher sputtering yield. Titanium, despite a slightly lower sputtering yield than Al, shows a greater rarefaction than aluminum as more particles are reflected from the target as high energy neutrals. In this case, a more efficient energy transfer process is responsible for the higher rarefaction observed in Ti sputtering when compared to Al. The authors also observed that by sputtering at a higher pressure, the probability of electron impact ionization of sputtered particles is increased and speculate about the role of this process in contrast to penning ionization, which is believed to be the dominant ionization mechanism in magnetron sputtering.

  16. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    SciTech Connect

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  17. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    SciTech Connect

    Anders, Andre

    2010-07-15

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  18. Effect of Sputtering Temperature on Structure and Optical Properties of NiO Films Fabricated by Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Hui; Zhao, Yang; Li, Xinzhong; Zhen, Zhiqiang; Li, Hehe; Wang, Jingge; Tang, Miaomiao

    2017-07-01

    NiO thin films were deposited on sapphire and Corning 1737 glass substrates using the radio frequency magnetron sputtering system. The structures, optical and electrical properties of NiO films grown under different sputtering temperatures were thoroughly studied. The NiO films were composed of different-size NiO nano-grains with a strong (111) preferred orientation. The NiO grain size increased with the sputtering temperature increase. The band gap values decreased from 3.69 eV to 3.38 eV on the sputtering temperature increase from 30°C to 450°C. Moreover, the electrical property variations of the NiO samples were studied by the Hall effect in detail.

  19. Effect of Sputtering Temperature on Structure and Optical Properties of NiO Films Fabricated by Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Hui; Zhao, Yang; Li, Xinzhong; Zhen, Zhiqiang; Li, Hehe; Wang, Jingge; Tang, Miaomiao

    2017-03-01

    NiO thin films were deposited on sapphire and Corning 1737 glass substrates using the radio frequency magnetron sputtering system. The structures, optical and electrical properties of NiO films grown under different sputtering temperatures were thoroughly studied. The NiO films were composed of different-size NiO nano-grains with a strong (111) preferred orientation. The NiO grain size increased with the sputtering temperature increase. The band gap values decreased from 3.69 eV to 3.38 eV on the sputtering temperature increase from 30°C to 450°C. Moreover, the electrical property variations of the NiO samples were studied by the Hall effect in detail.

  20. A high power impulse magnetron sputtering model to explain high deposition rate magnetic field configurations

    NASA Astrophysics Data System (ADS)

    Raman, Priya; Weberski, Justin; Cheng, Matthew; Shchelkanov, Ivan; Ruzic, David N.

    2016-10-01

    High Power Impulse Magnetron Sputtering (HiPIMS) is one of the recent developments in the field of magnetron sputtering technology that is capable of producing high performance, high quality thin films. Commercial implementation of HiPIMS technology has been a huge challenge due to its lower deposition rates compared to direct current Magnetron Sputtering. The cylindrically symmetric "TriPack" magnet pack for a 10 cm sputter magnetron that was developed at the Center for Plasma Material Interactions was able to produce higher deposition rates in HiPIMS compared to conventional pack HiPIMS for the same average power. The "TriPack" magnet pack in HiPIMS produces superior substrate uniformity without the need of substrate rotation in addition to producing higher metal ion fraction to the substrate when compared to the conventional pack HiPIMS [Raman et al., Surf. Coat. Technol. 293, 10 (2016)]. The films that are deposited using the "TriPack" magnet pack have much smaller grains compared to conventional pack DC and HiPIMS films. In this paper, the reasons behind the observed increase in HiPIMS deposition rates from the TriPack magnet pack along with a modified particle flux model is discussed.

  1. Decoration of ZnO nanorod arrays by Cu nanocrystals via magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Liu, Yangsi; Gao, Wei

    2017-07-01

    ZnO nanorods were decorated by Cu nanocrystals via magnetron sputtering to form Cu/ZnO nanocomposite arrays. The crystal structure and morphology of Cu/ZnO nanocomposite arrays were characterized by XRD and SEM. The optical absorbance of Cu/ZnO nanocomposite arrays was measured using a UV-vis spectrophotometer and their potential applications were discussed.

  2. DEPOSITION OF NIOBIUM AND OTHER SUPERCONDUCTING MATERIALS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING: CONCEPT AND FIRST RESULTS

    SciTech Connect

    High Current Electronics Institute, Tomsk, Russia; Anders, Andre; Mendelsberg, Rueben J.; Lim, Sunnie; Mentink, Matthijs; Slack, Jonathan L.; Wallig, Joseph G.; Nollau, Alexander V.; Yushkov, Georgy Yu.

    2011-07-24

    Niobium coatings on copper cavities have been considered as a cost-efficient replacement of bulk niobium RF cavities, however, coatings made by magnetron sputtering have not quite lived up to high expectations due to Q-slope and other issues. High power impulse magnetron sputtering (HIPIMS) is a promising emerging coatings technology which combines magnetron sputtering with a pulsed power approach. The magnetron is turned into a metal plasma source by using very high peak power density of ~ 1 kW/cm{sup 2}. In this contribution, the cavity coatings concept with HIPIMS is explained. A system with two cylindrical, movable magnetrons was set up with custom magnetrons small enough to be inserted into 1.3 GHz cavities. Preliminary data on niobium HIPIMS plasma and the resulting coatings are presented. The HIPIMS approach has the potential to be extended to film systems beyond niobium, including other superconducting materials and/or multilayer systems.

  3. Magnetron sputtering of copper on thermosensitive polymer materials of the gas centrifuge rotors

    NASA Astrophysics Data System (ADS)

    Borisevich, V.; Senchenkov, S.; Titov, D.

    2016-09-01

    Magnetron sputtering is the well-known and widely-used deposition technique for coating versatile high-quality and well-adhered films. However, the technology has some limitations, caused by high temperatures on the coating surface. The paper is devoted to the experimental development of a process of magnetron sputtering of copper on a surface coated with a thermosensitive polymer made of carbon fiber with epoxide binder. This process is applied for balancing a rotor of a gas centrifuge for isotope separation. The optimum operating parameters of the process are found and discussed. They were in quantitative agreement with data obtained by means of non-stationary modeling based on a global description of plasma in the typical geometry of the magnetron discharges obtained in independent research. The structure of the resulting layer is investigated.

  4. Thin-film TiPbO3 varistors obtained by two-source magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Lewandowski, M.

    2016-02-01

    The paper presents the method of obtaining thin films of TiPbO3 by two-source magnetron sputtering DC-M. The films were obtained in a reactive process of sputtering metallic targets of titanium (Ti) and lead (Pb). The research involved the impact of the time of sputtering of the respective targets on voltage-dependent resistance of the obtained films for different power conditions, pressures of process gases and the powers provided on the targets. The obtained nonlinearity coefficients and the current-voltage I(U) characteristics were within the following range.

  5. Full System Model of Magnetron Sputter Chamber - Proof-of-Principle Study

    SciTech Connect

    Walton, C; Gilmer, G; Zepeda-Ruiz, L; Wemhoff, A; Barbee, T

    2007-05-04

    The lack of detailed knowledge of internal process conditions remains a key challenge in magnetron sputtering, both for chamber design and for process development. Fundamental information such as the pressure and temperature distribution of the sputter gas, and the energies and arrival angles of the sputtered atoms and other energetic species is often missing, or is only estimated from general formulas. However, open-source or low-cost tools are available for modeling most steps of the sputter process, which can give more accurate and complete data than textbook estimates, using only desktop computations. To get a better understanding of magnetron sputtering, we have collected existing models for the 5 major process steps: the input and distribution of the neutral background gas using Direct Simulation Monte Carlo (DSMC), dynamics of the plasma using Particle In Cell-Monte Carlo Collision (PIC-MCC), impact of ions on the target using molecular dynamics (MD), transport of sputtered atoms to the substrate using DSMC, and growth of the film using hybrid Kinetic Monte Carlo (KMC) and MD methods. Models have been tested against experimental measurements. For example, gas rarefaction as observed by Rossnagel and others has been reproduced, and it is associated with a local pressure increase of {approx}50% which may strongly influence film properties such as stress. Results on energies and arrival angles of sputtered atoms and reflected gas neutrals are applied to the Kinetic Monte Carlo simulation of film growth. Model results and applications to growth of dense Cu and Be films are presented.

  6. Hysteresis behavior during reactive magnetron sputtering of Al{sub 2}O{sub 3} using a rotating cylindrical magnetron

    SciTech Connect

    Depla, D.; Haemers, J.; Buyle, G.; Gryse, R. de

    2006-07-15

    Rotating cylindrical magnetrons are used intensively on industrial scale. A rotating cylindrical magnetron on laboratory scale makes it possible to study this deposition technique in detail and under well controlled conditions. Therefore, a small scale rotating cylindrical magnetron was designed and used to study the influence of the rotation speed on the hysteresis behavior during reactive magnetron sputtering of aluminum in Ar/O{sub 2} in dc mode. This study reveals that the hysteresis shifts towards lower oxygen flows when the rotation speed of the target is increased, i.e., target poisoning occurs more readily when the rotation speed is increased. The shift is more pronounced for the lower branch of the hysteresis loop than for the upper branch of the hysteresis. This behavior can be understood qualitatively. The results also show that the oxidation mechanism inside the race track is different from the oxidation mechanism outside the race track. Indeed, outside the race track the oxidation mechanism is only defined by chemisorption while inside the race track reactive ion implantation will also influence the oxidation mechanism.

  7. A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

    DOE PAGES

    Anders, André

    2014-09-02

    In this study, high power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in thismore » review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.« less

  8. Structural formation and photocatalytic activity of magnetron sputtered titania and doped-titania coatings.

    PubMed

    Kelly, Peter J; West, Glen T; Ratova, Marina; Fisher, Leanne; Ostovarpour, Soheyla; Verran, Joanna

    2014-10-13

    Titania and doped-titania coatings can be deposited by a wide range of techniques; this paper will concentrate on magnetron sputtering techniques, including "conventional" reactive co-sputtering from multiple metal targets and the recently introduced high power impulse magnetron sputtering (HiPIMS). The latter has been shown to deliver a relatively low thermal flux to the substrate, whilst still allowing the direct deposition of crystalline titania coatings and, therefore, offers the potential to deposit photocatalytically active titania coatings directly onto thermally sensitive substrates. The deposition of coatings via these techniques will be discussed, as will the characterisation of the coatings by XRD, SEM, EDX, optical spectroscopy, etc. The assessment of photocatalytic activity and photoactivity through the decomposition of an organic dye (methylene blue), the inactivation of E. coli microorganisms and the measurement of water contact angles will be described. The impact of different deposition technologies, doping and co-doping strategies on coating structure and activity will be also considered.

  9. Magnetron sputtered boron films for increasing hardness of a metal surface

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    2003-05-27

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  10. Laser-Aided Diagnostics of Atoms and Particulates in Magnetron Sputtering Plasmas

    SciTech Connect

    Nafarizal, N.; Takada, N.; Sasaki, K.

    2009-07-07

    Laser-aided diagnostic technique is introduced as an advanced and valuable technique to evaluate the properties of plasma. This technique is an expensive and sophisticated technique which requires researchers to have a basic knowledge in optical spectroscopy. In the present paper, we will generally introduce the experimental work using laser-induced fluorescence (LIF) and laser light scattering (LLS) techniques. The LIF was used to evaluate the spatial distribution of Cu atoms in magnetron sputtering plasma. The change in the spatial distribution was studied as a function of discharge power. On the other hand, the LLS was used to evaluate the generation of Cu particulates in high-pressure magnetron sputtering plasma. The temporal evolution of Cu particulates in the gas phase of sputtering plasma was visualized successfully.

  11. A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

    SciTech Connect

    Anders, André

    2014-09-02

    In this study, high power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in this review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.

  12. Research on the optical and electrical properties of ITO thin film using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Cai, Changlong; Zhai, Yujia; Huang, Jing; Yang, Xu; Liu, Weiguo; Gao, Aihua

    2009-12-01

    Due to excellent photoelectrical properties, ITO thin films become the indispensable flat transparent electrode for their practical applications in the flat-panel displays, touch screens, solar cells and electrochromic devices. Therefore, it's very necessary to study photoelectrical properties of ITO films. In this paper, ITO thin films were prepared on the glass substrates by DC magnetron sputtering technology, and measured the transmittance of ITO thin films in the visible region using the spectrophotometer; the resistivities were measured with the four-probe instrument. The effects of sputtering pressure, oxygen-argon flow ratio and sputtering power was researched on photoelectrical performance of ITO thin films. The results show that, the optimum parameters of ITO films prepared are: sputtering pressure 0.6Pa, oxygen-argon flow ratio 1:40, sputtering power 108W. The average transmittance in the visible area is 81.18%, resistivity is 8.9197 × 10-3Ω.cm.

  13. Research on the optical and electrical properties of ITO thin film using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Cai, Changlong; Zhai, Yujia; Huang, Jing; Yang, Xu; Liu, Weiguo; Gao, Aihua

    2010-03-01

    Due to excellent photoelectrical properties, ITO thin films become the indispensable flat transparent electrode for their practical applications in the flat-panel displays, touch screens, solar cells and electrochromic devices. Therefore, it's very necessary to study photoelectrical properties of ITO films. In this paper, ITO thin films were prepared on the glass substrates by DC magnetron sputtering technology, and measured the transmittance of ITO thin films in the visible region using the spectrophotometer; the resistivities were measured with the four-probe instrument. The effects of sputtering pressure, oxygen-argon flow ratio and sputtering power was researched on photoelectrical performance of ITO thin films. The results show that, the optimum parameters of ITO films prepared are: sputtering pressure 0.6Pa, oxygen-argon flow ratio 1:40, sputtering power 108W. The average transmittance in the visible area is 81.18%, resistivity is 8.9197 × 10-3Ω.cm.

  14. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

    SciTech Connect

    Weichsel, T. Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Silze, A.

    2014-05-15

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10{sup 10} cm{sup −3} to 1 × 10{sup 11} cm{sup −3}, when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10{sup 18} atoms/s for aluminum, which meets the demand for the production of a milliampere Al{sup +} ion beam.

  15. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Silze, A

    2014-05-01

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10(10) cm(-3) to 1 × 10(11) cm(-3), when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10(18) atoms/s for aluminum, which meets the demand for the production of a milliampere Al(+) ion beam.

  16. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

    NASA Astrophysics Data System (ADS)

    Weichsel, T.; Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Silze, A.

    2014-05-01

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 1010 cm-3 to 1 × 1011 cm-3, when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 1018 atoms/s for aluminum, which meets the demand for the production of a milliampere Al+ ion beam.

  17. RF magnetron sputter deposition and analysis of strontium-doped lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Sriram, Sharath; Bhaskaran, Madhu; Holland, Anthony S.; Fardin, Ernest; Kandasamy, Sasikaran

    2006-01-01

    The paper investigates conditions for depositing perovskite-oriented strontium-doped lead zirconate titanate (PSZT) thin films using RF magnetron sputtering. PSZT is a material that can exhibit high piezoelectric and ferroelectric properties. The deposition was conducted using an 8/65/35 PSZT sputtering target. The effects of sputtering conditions and the deposition rates for films sputtered onto several surfaces (including gold and platinum coated substrates) were studied. Combinations of in-situ heating during sputtering and post-deposition Rapid Thermal Annealing (RTA) were performed and resulting phases determined. RTA was carried out in argon to observe their effects. The sputtered films were analyzed by Scanning Electron Microscopy (SEM), X-ray Diffractometry (XRD), and X-Ray Photoelectron Spectroscopy (XPS). Results show dramatic differences in the grain structure of the deposited films on the different surfaces. The stoichiometry of the sputtered films is demonstrated using XPS. In the case of gold and platinum coated substrates, sputtering was also carried out for different durations, to establish the growth rate of the film, and to observe the variation in grain size with sputtering duration. The deposited thin films were resistant to most chemical wet etchants and were Ion Beam Etched (IBE) at 19 nm/min.

  18. Highly adherent bioactive glass thin films synthetized by magnetron sputtering at low temperature.

    PubMed

    Stan, G E; Pasuk, I; Husanu, M A; Enculescu, I; Pina, S; Lemos, A F; Tulyaganov, D U; El Mabrouk, K; Ferreira, J M F

    2011-12-01

    Thin (380-510 nm) films of a low silica content bioglass with MgO, B(2)O(3), and CaF(2) as additives were deposited at low-temperature (150°C) by radio-frequency magnetron sputtering onto titanium substrates. The influence of sputtering conditions on morphology, structure, composition, bonding strength and in vitro bioactivity of sputtered bioglass films was investigated. Excellent pull-out adherence (~73 MPa) was obtained when using a 0.3 Pa argon sputtering pressure (BG-a). The adherence declined (~46 MPa) upon increasing the working pressure to 0.4 Pa (BG-b) or when using a reactive gas mixture (~50 MPa). The SBF tests clearly demonstrated strong biomineralization features for all bioglass sputtered films. The biomineralization rate increased from BG-a to BG-b, and yet more for BG-c. A well-crystallized calcium hydrogen phosphate-like phase was observed after 3 and 15 days of immersion in SBF in all bioglass layers, which transformed monotonously into hydroxyapatite under prolonged SBF immersion. Alkali and alkali-earth salts (NaCl, KCl and CaCO(3)) were also found at the surface of samples soaked in SBF for 30 days. The study indicated that features such as composition, structure, adherence and bioactivity of bioglass films can be tailored simply by altering the magnetron sputtering working conditions, proving that this less explored technique is a promising alternative for preparing implant-type coatings.

  19. Fabrication and characterization of flaky core-shell particles by magnetron sputtering silver onto diatomite

    NASA Astrophysics Data System (ADS)

    Wang, Yuanyuan; Zhang, Deyuan; Cai, Jun

    2016-02-01

    Diatomite has delicate porous structures and various shapes, making them ideal templates for microscopic core-shell particles fabrication. In this study, a new process of magnetron sputtering assisted with photoresist positioning was proposed to fabricate lightweight silver coated porous diatomite with superior coating quality and performance. The diatomite has been treated with different sputtering time to investigate the silver film growing process on the surface. The morphologies, constituents, phase structures and surface roughness of the silver coated diatomite were analyzed with SEM, EDS, XRD and AFM respectively. The results showed that the optimized magnetron sputtering time was 8-16 min, under which the diatomite templates were successfully coated with uniform silver film, which exhibits face centered cubic (fcc) structure, and the initial porous structures were kept. Moreover, this silver coating has lower surface roughness (RMS 4.513 ± 0.2 nm) than that obtained by electroless plating (RMS 15.692 ± 0.5 nm). And the infrared emissivity of coatings made with magnetron sputtering and electroless plating silver coated diatomite can reach to the lowest value of 0.528 and 0.716 respectively.

  20. High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization

    SciTech Connect

    Ehiasarian, A. P.; New, R.; Hecimovic, A.; Arcos, T. de los; Schulz-von der Gathen, V.; Boeke, M.; Winter, J.

    2012-03-12

    We report on instabilities in high power impulse magnetron sputtering plasmas which are likely to be of the generalized drift wave type. They are characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron and cause periodic shifts in floating potential. The azimuthal mode number m depends on plasma current, plasma density, and gas pressure. The structures rotate in E-vectorxB-vector direction at velocities of {approx}10 km s{sup -1} and frequencies up to 200 kHz. Collisions with residual gas atoms slow down the rotating wave, whereas increasing ionization degree of the gas and plasma conductivity speeds it up.

  1. The role of Ohmic heating in dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Brenning, N.; Gudmundsson, J. T.; Lundin, D.; Minea, T.; Raadu, M. A.; Helmersson, U.

    2016-12-01

    Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The secondary electron emission yield {γ\\text{SE}} is identified as the key parameter determining the relative importance of the two processes. For a conventional 5 cm diameter planar dc magnetron, Ohmic heating is found to be more important than sheath energization for secondary electron emission yields below around 0.1.

  2. Investigation of Optical and Electrochromic Properties of Tungsten Oxide Deposited with Horizontal DC and DC Pulse Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han

    2012-04-01

    The proposal of this research was to compare the optical and electrochromic properties of tungsten oxide (WO3) thin films deposited with a horizontal direct current (DC) and DC pulse magnetron sputtering. These WO3 thin films were deposited onto indium tin oxide (ITO) glass and p-type silicon substrate at different gas ratios of oxygen and argon. The variation in the transmittance between the coloring and bleaching was important for the smart window. WO3 thin films have good electrochromic properties at gas ratios of oxygen/argon (O2/Ar) of 0.7 and 0.6 for DC and DC pulse magnetron sputtering, respectively. However, WO3 thin films deposited by DC pulse magnetron sputtering have better optical and electrochromic properties than the films deposited by DC magnetron sputtering.

  3. Deposition of Tungsten Thin Films on Flexible Polymer Substrates by Direct-Current Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Huo, Zhenxuan; Jiao, Xiangquan; Zhong, Hui; Shi, Yu

    2015-11-01

    We have investigated thin tungsten films deposited on polymer substrates by direct-current magnetron sputtering under different conditions. Unlike tungsten films deposited on rigid substrates, films on polymer substrates grew at appropriate sputtering power, low sputtering pressure, and low substrate temperature. High sputtering power results in tungsten films with good crystal orientation, compact microstructure, and low electrical resistivity. However, high-power sputtering damages the polymer substrates. Enhancing sputtering pressure substantially degrades tungsten orientation and increases electrical resistivity. Furthermore, a slight increase in substrate temperature results in tungsten films with good crystal orientation, a dense microstructure, and low electrical resistivity. Nonetheless, a high substrate temperature results in soft and deformed polymer substrates; this degrades tungsten crystal orientation and substantially roughens tungsten films. On the basis of this study, compact and flat tungsten films with low electrical resistivity can be obtained at a sputtering power of 69 W, a sputtering pressure of 1 Pa, a substrate temperature of 100°C, and a distance between target and substrate of 60 mm.

  4. Coating multilayer material with improved tribological properties obtained by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mateescu, A. O.; Mateescu, G.; Balasoiu, M.; Pompilian, G. O.; Lungu, M.

    2017-02-01

    This work is based on the Patent no. RO 128094 B1, granted by the Romanian State Office for Inventions and Trademarks. The goal of the work is to obtain for investigations tribological coatings with multilayer structure with improved tribological properties, deposited by magnetron sputtering process from three materials (sputtering targets). Starting from compound chemical materials (TiC, TiB2 and WC), as sputtering targets, by deposition in argon atmosphere on polished stainless steel, we have obtained, based on the claims of the above patent, thin films of multilayer design with promising results regarding their hardness, elastic modulus, adherence, coefficient of friction and wear resistance. The sputtering process took place in a special sequence in order to ensure better tribological properties to the coating, comparing to those of the individual component materials. The tribological properties, such as the coefficient of friction, are evaluated using the tribometer test.

  5. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G. H.

    2015-09-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C) temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

  6. Fabrication of size-selected Pd nanoclusters using a magnetron plasma sputtering source

    SciTech Connect

    Ayesh, A. I.; Qamhieh, N.; Ghamlouche, H.; Thaker, S.; El-Shaer, M.

    2010-02-15

    We report on the fabrication of palladium (Pd) nanoclusters using a dc magnetron sputtering source. Plasma sputtering vaporizes the target's material forming nanoclusters by inert gas condensation. The sputtering source produces ionized nanoclusters that enable the study of the nanoclusters' size distribution using a quadrupole mass filter. In this work, the dependence of Pd nanoclusters' size distribution on various source parameters, such as the sputtering discharge power, inert gas flow rate, and aggregation length have been investigated. This work demonstrates the ability of tuning the palladium nanoclusters' size by proper optimization of the source operation conditions. The experimental nanocluster sizes are compared with a theoretical model that reveals the growth of large nanoclusters from 'embryos' by a two-body collision. The model is valid for a specific range of deposition parameters (low inert gas flow rates and aggregation lengths equal or below 70 mm).

  7. Magnetron sputtering of metallic coatings onto elastomeric substrates for a decrease in fuel permeation rate

    NASA Astrophysics Data System (ADS)

    Myntti, Matthew F.

    The purpose of this research was to investigate the application of a metallic coating by magnetron sputtering onto elastomeric substrates, as an inhibiting layer to permeation transport. The metallic coatings which were deposited were aluminum, titanium, and copper. The substrates used were NBR, FVMQ, and FKM elastomers. The permeating fluids were ASTM Fuel C, isooctane, and toluene. The magnetron sputtering properties of these metallic elements were unique to each material, with the titanium sputtering rate being very low. The sputtering rates of these materials correlated well with their sublimation temperature. It was found that some of the metallic particles which were sputtered onto the substrates, implanted into the surface of the elastomeric membranes, with the total amount and distance of implantation being related to the density of the substrate material. The permeation of these solvents through the composite materials was reduced by the presence of these coatings with the reduction in permeation rate ranging from 12 to 25% for Fuel C. The pervaporation properties of these substrates were also evaluated. It was found from this analysis that for the FVMQ and NBR substrates, the permeation rate of the permeating solute molecules was proportional to the size of the permeation molecule. The substrate materials were not significantly stiffened by the addition of the thin metallic coatings. The coated materials were cohesive and well adhered, as determined by stretching of the substrate materials with the metallic layer in place. Upon stretching, there was no evidence of damage to the metallic coating.

  8. In situ stress evolution during magnetron sputtering of transition metal nitride thin films

    SciTech Connect

    Abadias, G.; Guerin, Ph.

    2008-09-15

    Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence of stress gradients is revealed, as the result of two kinetically competing stress generation mechanisms: atomic peening effect, inducing compressive stress, and void formation, leading to a tensile stress regime predominant at higher film thickness. No stress relaxation is detected during growth interrupt in both regimes. A change from compressive to tensile stress is evidenced with increasing film thickness, Ti content, sputtering pressure, and decreasing bias voltage.

  9. Velocity distribution of neutral species during magnetron sputtering by Fabry-Perot interferometry

    SciTech Connect

    Britun, N.; Han, J. G.; Oh, S.-G.

    2008-04-07

    The velocity distribution of a metallic neutral species sputtered in a dc magnetron discharge was measured using a planar Fabry-Perot interferometer and a hollow cathode lamp as a reference source. The measurement was performed under different angles of view relative to the target surface. The velocity distribution function in the direction perpendicular to the target becomes asymmetrical as the Ar pressure decreases, whereas it remains nearly symmetrical when the line of sight is parallel to the target surface. The average velocity of the sputtered Ti atoms was measured to be about 2 km/s.

  10. Magnetron sputtering system for fabrication of X-ray multilayer optics

    SciTech Connect

    Nayak, M.; Rao, P. N.; Lodha, G. S.

    2012-06-25

    A specially designed DC/RF magnetron sputtering system has been installed for the development of large area x-ray multilayer (ML) optics at Indus synchrotron radiation facility. A brief description of the system configuration, automation and operating conditions are presented. The system has the capability of fabricating large area (300 Multiplication-Sign 100-mm{sup 2}) X-ray MLs with required accuracy, uniformity and reproducibility. Thin film growth suitable for fabrication of X-ray ML optics has achieved by optimizing the sputtering process parameters. The representative results are presented.

  11. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  12. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    SciTech Connect

    Crăciunescu, Corneliu M. Mitelea, Ion Budău, Victor; Ercuţa, Aurel

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  13. Resistive switching behavior of RF magnetron sputtered ZnO thin films

    SciTech Connect

    Rajalakshmi, R.; Angappane, S.

    2015-06-24

    The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO{sub 2}/SiO{sub x}/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ∼200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.

  14. Characterization thin films TiO2 obtained in the magnetron sputtering process

    NASA Astrophysics Data System (ADS)

    Kamiński, Maciej; Firek, Piotr; Caban, Piotr

    2016-12-01

    The aim of the study was to elucidate influence parameters of magnetron sputtering process on growth rate and quality of titanium dioxide thin films. TiO2 films were produced on two inch silicon wafers by means of magnetron sputtering method. Characterization of samples was performed using ellipsometer and atomic force microscope (AFM). Currentvoltage (I-V) and capacitance-voltage (C-V) measurements were also carried out. The results enable to determine impact of pressure, power, gases flow and process duration on the physical parameters obtained layers such as electrical permittivity, flat band voltage and surface topography. Experiments were designed according to orthogonal array Taguchi method. Respective trends impact were plotted.

  15. The microstructure and properties of titanium dioxide films synthesized by unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Leng, Y. X.; Chen, J. Y.; Yang, P.; Sun, H.; Huang, N.

    2007-04-01

    In this work, titanium oxide films were deposited on Ti6Al4V and Si (1 0 0) by DC unbalanced magnetron sputtering method at different oxygen pressure. X-ray diffraction (XRD), microhardness tests, pin-on-disk wear experiments, surface contact angle tests and platelet adhesion investigation were conducted to evaluate the properties of the films. The corrosion behavior of titanium dioxide films was characterized by potentiodynamic polarization. The results showed that titanium oxide films deposited by unbalance magnetron sputtering were compact and could obviously enhance microhardness, wear resistance of titanium alloy substrate. Potentiodynamic polarization curves showed that Ti-6Al-4V deposited with titanium dioxide films had lower dissolution currents than that of the uncoated one. The results of in vitro hemocompatibility analyses indicated that the blood compatibility of the titanium dioxide films with bandgap 3.2 eV have better blood compatibility.

  16. High power impulse magnetron sputtering: Current-voltage-time characteristics indicate the onset of sustained self-sputtering

    NASA Astrophysics Data System (ADS)

    Anders, André; Andersson, Joakim; Ehiasarian, Arutiun

    2007-12-01

    The commonly used current-voltage characteristics are found inadequate for describing the pulsed nature of the high power impulse magnetron sputtering (HIPIMS) discharge; rather, the description needs to be expanded to current-voltage-time characteristics for each initial gas pressure. Using different target materials (Cu, Ti, Nb, C, W, Al, and Cr) and a pulsed constant-voltage supply, it is shown that the HIPIMS discharges typically exhibit an initial pressure dependent current peak followed by a second phase that is power and material dependent. This suggests that the initial phase of a HIPIMS discharge pulse is dominated by gas ions, whereas the later phase has a strong contribution from self-sputtering. For some materials, the discharge switches into a mode of sustained self-sputtering. The very large differences between materials cannot be ascribed to the different sputter yields but they indicate that generation and trapping of secondary electrons play a major role for current-voltage-time characteristics. In particular, it is argued that the sustained self-sputtering phase is associated with the generation of multiply charged ions because only they can cause potential emission of secondary electrons, whereas the yield caused by singly charged metal ions is negligibly small.

  17. Experimental investigation of quasiperiodic-chaotic-quasiperiodic-chaotic transition in a direct current magnetron sputtering plasma

    SciTech Connect

    Sabavath, Gopi Kishan; Banerjee, I.; Mahapatra, S. K.; Shaw, Pankaj Kumar; Sekar Iyengar, A. N.

    2015-08-15

    Floating potential fluctuations from a direct current magnetron sputtering plasma have been analysed using time series analysis techniques like phase space plots, power spectra, frequency bifurcation plot, etc. The system exhibits quasiperiodic-chaotic-quasiperiodic-chaotic transitions as the discharge voltage was increased. The transitions of the fluctuations, quantified using the largest Lyapunov exponent, have been corroborated by Hurst exponent and the Shannon entropy. The Shannon entropy is high for quasiperiodic and low for chaotic oscillations.

  18. Comparison of DC and RF magnetron sputtering systems for Electrochromic W/Ti Thin Film Deposition

    NASA Astrophysics Data System (ADS)

    Teke, Erdogan; Kiristi, Melek; Uygun Oksuz, Aysegul; Bozduman, Ferhat; Gulec, Ali; Oksuz, Lutfi; Hala, Ahmed M.

    2013-10-01

    In this study electrochromic tungsten-titanium thin films were deposited on ITO (indium thin oxide) glasses by using both DC and RF magnetron sputtering techniques. The discharges have been operated in same discharge power, geometry and argon/oxygen mixture pressure for comparison. The voltage and current characteristics and optical emission spectrums of both plasma systems will be given. The plasma parameters are determined by a double probe. ITO thin films coating electrical, optical and morphological characteristics will be compared.

  19. Composition control of PZT thin films by varying technological parameters of RF magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Pronin, V. P.; Dolgintsev, D. M.; Pronin, I. P.; Senkevich, S. V.; Kaptelov, E. Yu; Sergienko, A. Yu

    2017-07-01

    The article presents the effect of technological parameters of RF magnetron sputtering on the concentration of components of thin-film ferroelectric structures based on lead zirconate titanate PZT in the region of the morphotropic phase boundary. It is shown that by changing the distance from the target to the substrate and the pressure of the working gas mixture Ar + O2, it is possible to vary the composition of the deposited thin layers.

  20. Magnetic properties of thin films of samarium-cobalt alloy prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Panchal, Gyanendra; Gupta, Mukul; Choudhary, R. J.; Phase, D. M.

    2016-10-01

    We examine the magnetic properties of samarium-cobalt thin films on quartz and Si(111) substrates grown by dc magnetron sputtering. Both films are deposited on Cr buffer layer and subsequently a capping layer of Cr was also deposited. Secondary ion mass spectroscopy results reveal that Cr diffused in to Sm-Co layer.This lead to local change in magnetocrystalline anisotropy. As the result of this we observed the two coercive behaviors in magnetization of thin film.

  1. Measuring the energy flux at the substrate position during magnetron sputter deposition processes

    SciTech Connect

    Cormier, P.-A.; Thomann, A.-L.; Dussart, R.; Semmar, N.; Mathias, J.; Balhamri, A.; Snyders, R.; Konstantinidis, S.

    2013-01-07

    In this work, the energetic conditions at the substrate were investigated in dc magnetron sputtering (DCMS), pulsed dc magnetron sputtering (pDCMS), and high power impulse magnetron sputtering (HiPIMS) discharges by means of an energy flux diagnostic based on a thermopile sensor, the probe being set at the substrate position. Measurements were performed in front of a titanium target for a highly unbalanced magnetic field configuration. The average power was always kept to 400 W and the probe was at the floating potential. Variation of the energy flux against the pulse peak power in HiPIMS was first investigated. It was demonstrated that the energy per deposited titanium atom is the highest for short pulses (5 {mu}s) high pulse peak power (39 kW), as in this case, the ion production is efficient and the deposition rate is reduced by self-sputtering. As the argon pressure is increased, the energy deposition is reduced as the probability of scattering in the gas phase is increased. In the case of the HiPIMS discharge run at moderate peak power density (10 kW), the energy per deposited atom was found to be lower than the one measured for DCMS and pDCMS discharges. In these conditions, the HiPIMS discharge could be characterized as soft and close to a pulsed DCMS discharge run at very low duty cycle. For the sake of comparison, measurements were also carried out in DCMS mode with a balanced magnetron cathode, in the same working conditions of pressure and power. The energy flux at the substrate is significantly increased as the discharge is generated in an unbalanced field.

  2. Comparative analysis of Cr-B coatings deposited by magnetron sputtering in DC and HIPIMS modes

    NASA Astrophysics Data System (ADS)

    Kiryukhantsev-Korneev, Ph. V.; Horwat, D.; Pierson, J. F.; Levashov, E. A.

    2014-07-01

    Surface coatings of the Cr-B system have been obtained by magnetron sputtering in the DC and high-power impulse (HIPIMS) regimes. It is established that the passage from the DC regime to HIPIMS leads to suppression of the columnar grain growth and a twofold increase in the resistance of coatings to plastic deformation, while the plasticity index and hardness of coatings increase by 29 and 18%, respectively.

  3. Evaluation of thin amorphous calcium phosphate coatings on titanium dental implants deposited using magnetron sputtering.

    PubMed

    Yokota, Sou; Nishiwaki, Naruhiko; Ueda, Kyosuke; Narushima, Takayuki; Kawamura, Hiroshi; Takahashi, Tetsu

    2014-06-01

    Calcium phosphate is used for dental material because of its biocompatibility and osteoconductivity. Amorphous calcium phosphate (ACP) coatings deposited by magnetron sputtering can control their thickness and absorbability. This study aimed to evaluate and characterize ACP coatings deposited via magnetron sputtering. It was hypothesized that ACP coatings would enhance bone formation and be absorbed rapidly in vivo. ACP coatings that are 0.5 μm in thickness were deposited via magnetron sputtering on dental implants. Uncoated implants served as controls. The effect of the ACP coatings in vivo was investigated in New Zealand white rabbit. To evaluate the effect of the ACP coatings on the bone response of the implants, the removal torque, implant stability quotient, and histomorphometric analysis were performed on the implants at 1, 2, and 4 weeks after implantation. Results of the x-ray diffraction analyses confirmed the deposition of ACP coatings. Images from the scanning electron microscopy revealed that the coatings were dense, uniform, and 0.5 μm in thickness and that they were absorbed completely. Mechanical stability and bone formation in the case of the ACP-coated implants were higher than those of control. These results suggest that implants coated with thin ACP layers improve implant fixation and accelerate bone response.

  4. Effect of buffer layer on thermochromic performances of VO2 films fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Benqin; Tao, Haizheng; Zhao, Xiujian

    2016-03-01

    As a well-developed industrial fabricating method, magnetron sputtering technique has its distinct advantages for the large-scale production. In order to investigate the effect of buffer layer on the formation and thermochromic performances of VO2 films, using RF magnetron sputtering method, we fabricated three kinds of buffer layers SiO2, TiO2 and SnO2 on soda lime float-glass. Then according to the reactive DC magnetron sputtering method, VO2 films were deposited. Due to the restriction of heat treatment temperature when using soda lime float-glass as substrates, dense rutile phase TiO2 cannot be formed, leading to the formation of vanadium oxide compounds containing Na ions. When using SnO2 as buffer layer, we found that relatively high pure VO2 can be deposited more easily. In addition, compared with the effect of SiO2 buffer layer, we observed an enhanced visible transparency, a decreased infrared emissivity, which should be mainly originated from the modified morphology and/or the hetero-structured VO2/SnO2 interface.

  5. Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan; Krueger, Dennis; Schmidt, Frederik; Brinkmann, Ralf Peter; Mussenbrock, Thomas

    2016-09-01

    Magnetron sputtering typically operated at low pressures below 1 Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter, giving rise to low, mid, and high energy groups of ions observed at the substrate. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified. This work is supported by the German Research Foundation (DFG) in the frame of the transregional collaborative research centre TRR 87.

  6. Plasma"anti-assistance" and"self-assistance" to high power impulse magnetron sputtering

    SciTech Connect

    Anders, Andre; Yushkov, Georgy Yu.

    2009-01-30

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contra-productive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

  7. Fabrication of Optical Multilayer Devices from Porous Silicon Coatings with Closed Porosity by Magnetron Sputtering.

    PubMed

    Caballero-Hernández, Jaime; Godinho, Vanda; Lacroix, Bertrand; Jiménez de Haro, Maria C; Jamon, Damien; Fernández, Asunción

    2015-07-01

    The fabrication of single-material photonic-multilayer devices is explored using a new methodology to produce porous silicon layers by magnetron sputtering. Our bottom-up methodology produces highly stable amorphous porous silicon films with a controlled refractive index using magnetron sputtering and incorporating a large amount of deposition gas inside the closed pores. The influence of the substrate bias on the formation of the closed porosity was explored here for the first time when He was used as the deposition gas. We successfully simulated, designed, and characterized Bragg reflectors and an optical microcavity that integrates these porous layers. The sharp interfaces between the dense and porous layers combined with the adequate control of the refractive index and thickness allowed for excellent agreement between the simulation and the experiments. The versatility of the magnetron sputtering technique allowed for the preparation of these structures for a wide range of substrates such as polymers while also taking advantage of the oblique angle deposition to prepare Bragg reflectors with a controlled lateral gradient in the stop band wavelengths.

  8. Origin of particles during reactive sputtering of oxides using planar and cylindrical magnetrons.

    PubMed

    Rademacher, Daniel; Fritz, Benjamin; Vergöhl, Michael

    2012-03-01

    Particles generated during reactive magnetron sputtering cause defects in optical thin films, which may lead to losses in optical performance, pinholes, loss of adhesion, decreased laser-induced damage thresholds and many more negative effects. Therefore, it is important to reduce the particle contamination during the manufacturing process. In the present paper, the origin of particles during the deposition of various oxide films by midfrequency pulsed reactive magnetron sputtering was investigated. Several steps have been undertaken to decrease the particle contamination during the complete substrate handling procedure. It was found that conditioning of the vacuum chamber can help to decrease the defect level significantly. This level remains low for several hours of sputtering and increases after 100 hours of process time. Particle densities of SiO(2) films deposited with cylindrical and planar dual magnetrons at different process parameters as well as different positions underneath the target were compared. It was observed that the process power influences the particle density significantly in case of planar targets while cylindrical targets have no such strong dependence. In addition, the particle contamination caused by different cylindrical target materials was analyzed. No major differences in particle contamination of different cylindrical target types and materials were found.

  9. Tailoring of antibacterial Ag nanostructures on TiO2 nanotube layers by magnetron sputtering.

    PubMed

    Uhm, Soo-Hyuk; Song, Doo-Hoon; Kwon, Jae-Sung; Lee, Sang-Bae; Han, Jeon-Geon; Kim, Kyoung-Nam

    2014-04-01

    To reduce the incidence of postsurgical bacterial infection that may cause implantation failure at the implant-bone interface, surface treatment of titanium implants with antibiotic materials such as silver (Ag) has been proposed. The purpose of this work was to create TiO2 nanotubes using plasma electrolytic oxidation (PEO), followed by formation of an antibacterial Ag nanostructure coating on the TiO2 nanotube layer using a magnetron sputtering system. PEO was performed on commercially pure Ti sheets. The Ag nanostructure was added onto the resulting TiO2 nanotube using magnetron sputtering at varying deposition rates. Field emission scanning electron microscopy and transmission electron microscopy were used to characterize the surface, and Ag content on the TiO2 nanotube layer was analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Scanning probe microscopy for surface roughness and contact angle measurement were used to indirectly confirm enhanced TiO2 nanotube hydrophilicity. Antibacterial activity of Ag ions in solution was determined by inductively coupled plasma mass spectrometry and antibacterial testing against Staphylococcus aureus (S. aureus). In vitro, TiO2 nanotubes coated with sputtered Ag resulted in significantly reduced S. aureus. Cell viability assays showed no toxicity for the lowest sputtering time group in the osteoblastic cell line MC3T3-E1. These results suggest that a multinanostructured layer with a biocompatible TiO2 nanotube and antimicrobial Ag coating is a promising biomaterial that can be tailored with magnetron sputtering for optimal performance.

  10. The temperature dependence of the electrical conductivity in Cu2O thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kudryashov, D.; Gudovskikh, A.; Zelentsov, K.; Mozharov, A.; Babichev, A.; Filimonov, A.

    2016-08-01

    The temperature dependence of the electrical conductivity in Cu2O thin films grown by magnetron sputtering at room temperature under different rf-power was investigated. Calculated activation energy of the conductivity for copper oxide (I) films linearly increases with increase in sputtering power reflecting an increasing in concentration of gap states.

  11. Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

    SciTech Connect

    Gupta, Rachana; Pandey, Nidhi; Behera, Layanta; Gupta, Mukul

    2016-05-23

    In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films. In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.

  12. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    SciTech Connect

    Kumar, G. Anil Reddy, M. V. Ramana; Reddy, Katta Narasimha

    2014-04-24

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10{sup −2} mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  13. Viable route towards large-area 2D MoS2 using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Samassekou, Hassana; Alkabsh, Asma; Wasala, Milinda; Eaton, Miller; Walber, Aaron; Walker, Andrew; Pitkänen, Olli; Kordas, Krisztian; Talapatra, Saikat; Jayasekera, Thushari; Mazumdar, Dipanjan

    2017-06-01

    Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using x-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants show very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.

  14. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-12-01

    Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  15. [Spectrum diagnostics for the time of pre-sputtering in thin films deposited by magnetron puttering].

    PubMed

    Guo, Qing-Lin; Fan, Qing; Cui, Yong-Liang; Dong, Kai-Hu; Zhang, Lei; Li, Xu; Zhang, Jin-Ping; Chen, Jin-Zhong

    2013-03-01

    Abstract A plasma analysis system comprised of Omni-X300 series grating spectrometer, CCD data acquisition system and optical fiber transmission system was utilized in the present paper to realize the real-time acquisition of plasma emission spectra during the process of radio frequency (RF) magnetron sputtering. The plasma emission spectra produced by NiTa, TiAl ceramic targets and NiA1, TiA1 alloy targets were monitored respectively, in addition, the behavior of analysis lines of Ta I 333.991 nm, Ni I 362.473 nm, Al I 396.153 nm and Ti I 398.176 nm with time was obtained, according to which the time of pre-sputtering of the four kinds of target materials was fixed. At the same time, for the TiAl alloy target as the research object, the influence of different powers and pressures on the time of pre-sputtering was studied.

  16. Non-uniform plasma distribution in dc magnetron sputtering: origin, shape and structuring of spokes

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Loquai, Simon; Ewa Klemberg-Sapieha, Jolanta; Martinu, Ludvik

    2015-12-01

    Non-homogeneous plasma distribution in the form of organized patterns called spokes was first observed in high power impulse magnetron sputtering (HiPIMS). In the present work we investigate the spoke phenomenon in non-pulsed low-current dc magnetron sputtering (DCMS). Using a high-speed camera the spokes were systematically studied with respect to discharge current, pressure, target material and magnetic field strength. Increase in the discharge current and/or gas pressure resulted in the sequential formation of two, then three and more spokes. The observed patterns were reproducible for the same discharge conditions. Spokes at low currents and pressures formed an elongated arrowhead-like shape and were commonly arranged in symmetrical patterns. Similar spoke patterns were observed for different target materials. When using a magnetron with a weaker magnetic field, spokes had an indistinct and diffuse shape, whereas in stronger magnetic fields spokes exhibited an arrowhead-like shape. The properties of spokes are discussed in relation to the azimuthally dependent electron-argon interactions. It is suggested that a single spoke is formed due to local gas breakdown and subsequent electron drift in the azimuthal direction. The spoke is self-sustained by electrons drifting in complex electric and magnetic fields that cause and govern azimuthally dependent processes: ionization, sputtering, and secondary electron emission. In this view plasma evolves from a single spoke into different patterns when discharge conditions are changed either by the discharge current, pressure or magnetic field strength. The azimuthal length of the spoke is associated with the electron-Ar collision frequency which increases with pressure and results in shortening of spoke until an additional spoke forms at a particular threshold pressure. It is proposed that the formation of additional spokes at higher pressures and discharge currents is, in part, related to the increased transport of

  17. In vivo dissolution behavior of various RF magnetron sputtered Ca-P coatings.

    PubMed

    Wolke, J G; de Groot, K; Jansen, J A

    1998-03-15

    Radiofrequency magnetron sputter deposition was used to deposit Ca-P sputter coatings on titanium discs, and these coatings were implanted subcutaneously into the backs of rabbits. Half of the as-sputtered coatings were subjected to additional heat treatment for 2 h at 500 degrees C. X-ray diffraction (XRD) demonstrated that annealing at 500 degrees C changed the amorphous sputtered coating into an amorphous-crystalline apatite structure. Scanning electron microscopic (SEM) examination of the sputtered coatings showed excellent coverage of the substrate surface. Annealing of the 4-microm-thick coatings resulted in the appearance of small cracks. SEM demonstrated that until 4 weeks of implantation, all heat-treated coatings were present and all amorphous coatings were completely or mostly dissolved. Fourier transform infrared spectroscopy showed the formation of carbonate apatite (CO3-AP) on these specimens. Furthermore, XRD analysis showed that these CO3-AP precipitated coatings disappeared after 8 weeks of implantation. On the other hand, SEM inspection of these specimens revealed that the 4-microm heat-treated coating was still partially maintained and that small Ca-P crystals were present on the titanium substrate. On the basis of these results, we conclude that apparently 0.1 microm heat-treated Ca-P sputter coating is of sufficient thicknesses to stimulate carbonate apatite deposition under in vivo conditions.

  18. Closed field unbalanced magnetron sputtering ion plating of Ni/Al thin films: influence of the magnetron power.

    PubMed

    Said, R; Ahmed, W; Gracio, J

    2010-04-01

    In this study NiAl thin films have been deposited using closed field unbalanced magnetron sputtering Ion plating (CFUBMSIP). The influence of magnetron power has been investigated using dense and humongous NiAl compound targets onto stainless steel and glass substrates. Potential applications include tribological, electronic media and bond coatings in thermal barrier coatings system. Several techniques has been used to characterise the films including surface stylus profilometry, energy dispersive spectroscopy (EDAX), X-Ray diffraction (XRD) Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) and Atomic force microscopy (AFM). Scratch tester (CSM) combined with acoustic emission singles during loading in order to compare the coating adhesion. The acoustic emission signals emitted during the indentation process were used to determine the critical load, under which the film begins to crack and/or break off the substrate. The average thickness of the films was approximately 1 um. EDAX results of NiAl thin films coating with various magnetron power exhibited the near equal atomic% Ni:Al. The best result being obtained using 300 W and 400 W DC power for Ni and Al targets respectively. XRD revealed the presence of beta NiAl phase for all the films coatings. AFM analysis of the films deposited on glass substrates exhibited quite a smooth surface with surface roughness values in the nanometre range. CSM results indicate that best adhesion was achieved at 300 W for Ni, and 400 W for Al targets compared to sample other power values. SIMS depth profile showed a uniform distribution of the Ni and Al component from the surface of the film to the interface.

  19. Spatial and temporal evolution of ion energies in high power impulse magnetron sputtering plasma discharge

    NASA Astrophysics Data System (ADS)

    Hecimovic, A.; Ehiasarian, A. P.

    2010-09-01

    High power impulse magnetron sputtering (HIPIMS) is a novel deposition technology successfully implemented on full scale industrial machines. HIPIMS utilizes short pulses of high power delivered to the target in order to generate high amount of metal ions. The life-span of ions between the pulses and their energy distribution could strongly influence the properties and characteristics of the deposited coating. In modern industrial coating machines the sample rotates on a substrate holder and changes its position and distance with regard to the magnetron. Time resolved measurements of the ion energy distribution function (IEDF) at different distances from the magnetron have been performed to investigate the temporal evolution of ions at various distances from target. The measurements were performed using two pressures, 1 and 3 Pa to investigate the influence of working gas pressure on IEDF. Plasma sampling energy-resolved mass spectroscopy was used to measure the IEDF of Ti1+, Ti2+, Ar1+, and Ar2+ ions in HIPIMS plasma discharge with titanium (Ti) target in Ar atmosphere. The measurements were done over a full pulse period and the distance between the magnetron and the orifice of the mass spectrometer was changed from 25 to 215 mm.

  20. Thin film transistor based on TiOx prepared by DC magnetron sputtering.

    PubMed

    Chung, Sung Mook; Shin, Jae-Heon; Hong, Chan-Hwa; Cheong, Woo-Seok

    2012-07-01

    This paper reports on the thin film transistor (TFT) based on TiOx prepared by direct current (DC) magnetron sputtering for the application of n-type channel transparent TFTs. A ceramic TiOx target was prepared for the sputtering of the TiO2 films. The structural, optical, and electrical properties of the TiO2 films were investigated after their heat treatment. It is observed from XRD measurement that the TiO2 films show anatase structure having (101), (004), and (105) planes after heat treatment. The anatase-structure TiO2 films show a band-gap energy of approximately 3.20 eV and a transmittance of approximately 91% (@550 nm). The bottom-gate TFTs fabricated with the TiO2 film as an n-type channel layer. These devices exhibit the on-off ratio, the field-effect mobility, and the threshold voltage of about 10(4), 0.002 cm2/Vs, and 6 V, respectively. These results indicate the possibility of applying TiO2 films depositied by DC magnetron sputtering to TiO2-based opto-electronic devices.

  1. Perspective: Is there a hysteresis during reactive High Power Impulse Magnetron Sputtering (R-HiPIMS)?

    NASA Astrophysics Data System (ADS)

    Strijckmans, K.; Moens, F.; Depla, D.

    2017-02-01

    This paper discusses a few mechanisms that can assist to answer the title question. The initial approach is to use an established model for DC magnetron sputter deposition, i.e., RSD2013. Based on this model, the impact on the hysteresis behaviour of some typical HiPIMS conditions is investigated. From this first study, it becomes clear that the probability to observe hysteresis is much lower as compared to DC magnetron sputtering. The high current pulses cannot explain the hysteresis reduction. Total pressure and material choice make the abrupt changes less pronounced, but the implantation of ionized metal atoms that return to the target seems to be the major cause. To further substantiate these results, the analytical reactive sputtering model is coupled with a published global plasma model. The effect of metal ion implantation is confirmed. Another suggested mechanism, i.e., gas rarefaction, can be ruled out to explain the hysteresis reduction. But perhaps the major conclusion is that at present, there are too little experimental data available to make fully sound conclusions.

  2. Structural and electronic characterization of antimonide films made by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Giulian, R.; Manzo, D. J.; Salazar, J. B.; Just, W.; de Andrade, A. M. H.; Schoffen, J. R.; Niekraszewicz, L. A. B.; Dias, J. F.; Bernardi, F.

    2017-02-01

    AlSb, GaSb and InSb films were deposited by magnetron sputtering on Si and SiO2/Si substrates and their electronic and structural properties were investigated as a function of film thickness and deposition temperature. Elemental composition and thickness were investigated by Rutherford backscattering spectrometry and particle induced x-ray emission analysis, while x-ray diffraction provided information about phase and structure. Surface chemical composition was investigated by x-ray photoelectron spectroscopy. Here we demonstrate that polycrystalline AlSb films can be produced by magnetron sputtering, where films deposited at 550 °C attain a zincblende phase and exhibit the smallest amount of oxygen (compared to other deposition temperatures). GaSb grown by this technique at room temperature holds an amorphous structure, with excess Sb, but for films deposited at 400 °C the structure is polycrystalline, stoichiometric with a zincblende phase. InSb films with a thickness of 75 nm and thinner, deposited at room temperature, are amorphous and for increasing thickness the films attain a zincblende phase with polycrystalline structure. Sputtering performed at elevated temperatures yields films with improved crystalline quality.

  3. Self-lubricating Ti-C-N nanocomposite coatings prepared by double magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Martínez-Martínez, D.; López-Cartes, C.; Justo, A.; Fernández, A.; Sánchez-López, J. C.

    2009-03-01

    This paper is devoted to the development of Ti(C,N)-based nanocomposite protective coatings consisting of nanocrystals of a hard phase (TiN or TiC xN y) embedded in an amorphous carbon-based matrix (a-C or a-CN x). The objective here is the achievement of a good compromise between the mechanical and tribological properties by the appropriate control of the hard/soft phase ratio and the microstructural characteristics of the film. To achieve this purpose, dual magnetron sputtering technique was employed following two different strategies. In the first one, we use Ti and graphite targets and Ar/N 2 gas mixtures, while in the second case, TiN and graphite targets are sputtered in an Ar atmosphere. By changing the sputtering power applied to each magnetron, different sets of samples are prepared for each route. The effect of the bias voltage applied to the substrate is also studied in some selected cases. The mechanical and tribological properties of the films are characterized and correlated with the microstructure, crystallinity and phase composition. The establishment of correlations enables the development of advanced coatings with tailored mechanical and tribological properties for desired applications.

  4. Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

    2016-03-01

    Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

  5. A Proven, Industrial Magnetron Sputtering System With Excellent Expansion And Scale-Up Capabilities

    NASA Astrophysics Data System (ADS)

    Griffin, D.

    1987-11-01

    Airco Solar Products began as a business unit of Airco Temescal in the early 1970's. The first large area magnetron sputtering deposition occurred in 1974, and the first large area magnetron sputtering system was built and operated under contract to Guardian Industries in Carleton, Michigan in 1977, and was later sold to Guardian. This system continues in three-shift production today. A smaller development system, designed for use in the architectural glass coating industry, was introduced in parallel with the large area coaters. There are now over seventeen of these systems, called the ILS-1600, in use or on order throughout the world. This is a proven, industrial-style development sputter deposition system and has an excellent field record in the areas of versatility and low maintenance requirements. Airco Solar Products has recently begun to market this system into other applications such as the photovoltaics industry, the flat panel display industry and other specialty industries. The features of this system such as overall design, expandability, process scale-up and available options will be discussed. Expanded versions of this system currently in the field will be reviewed, and future applications will be discussed.

  6. Control of growth and structure of Ag films by the driving frequency of magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Peifang, YANG; Chao, YE; Xiangying, WANG; Jiamin, GUO; Su, ZHANG

    2017-08-01

    The growth and structural properties of Ag films prepared by radio-frequency (2, 13.56 and 27.12 MHz) and very-high-frequency (40.68 and 60 MHz) magnetron sputtering were investigated. Using 2 MHz sputtering, the Ag film has a high deposition rate, a uniform and smooth surface and a good fcc structure. Using 13.56 and 27.12 MHz sputtering, the Ag films still have a high deposition rate and a good fcc structure, but a non-uniform and coarse surface. Using 40.68 MHz sputtering, the Ag film has a moderate deposition rate and a good fcc structure, but a less smooth surface. Using 60 MHz sputtering, the Ag film has a uniform and smooth surface, but a low deposition rate and a poor fcc structure. The growth and structural properties of Ag films are related to the ions’ energy and flux density. Therefore, changing the driving frequency is a good way to control the growth and structure of the Ag films.

  7. AZO films prepared by r.f. magnetron sputtering: structural, electrical, and optical properties

    NASA Astrophysics Data System (ADS)

    Grilli, Maria Luisa; Krasilnikova Sytchkova, Anna; Boycheva, Sylvia; Piegari, Angela

    2008-09-01

    Aluminium-doped zinc oxide films with 91% transmittance in the visible range and electrical resistivity of the order of 10-3 Ωcm were fabricated by radio frequency magnetron sputtering in Ar atmosphere starting from a target of ZnO mixed with 2% wt Al2O3. A systematic study of the deposition conditions such as substrate temperature, working gas pressure, radio frequency power, magnetron strength, target to substrate distance, etc., was performed when searching for improved electrical and optical performances of the films. Several deposition conditions govern the film characteristics, so that films with same good optical and electrical properties can be obtained by opportunely combining different deposition parameters.

  8. Colored and transparent oxide thin films prepared by magnetron sputtering: the glass blower approach.

    PubMed

    Gil-Rostra, Jorge; Chaboy, Jesús; Yubero, Francisco; Vilajoana, Antoni; González-Elipe, Agustín R

    2013-03-01

    This work describes the reactive magnetron sputtering processing at room temperature of several mixed oxide MxSiyOz thin films (M: Fe, Ni, Co, Mo, W, Cu) intended for optical, coloring, and aesthetic applications. Specific colors can be selected by adjusting the plasma gas composition and the Si-M ratio in the magnetron target. The microstructure and chemistry of the films are characterized by a large variety of techniques including X-ray photoemission spectroscopy, X-ray absorption spectroscopy (XAS), and infrared spectroscopy, while their optical properties are characterized by UV-vis transmission and reflection analysis. Particularly, XAS analysis of the M cations in the amorphous thin films has provided valuable information about their chemical state and local structure. It is concluded that the M cations are randomly distributed within the SiO2 matrix and that both the M concentration and its chemical state are the key parameters to control the final color of the films.

  9. High power pulsed magnetron sputtering: A method to increase deposition rate

    SciTech Connect

    Raman, Priya McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-05-15

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed.

  10. Plasma potential of a moving ionization zone in DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Anders, André

    2017-02-01

    Using movable emissive and floating probes, we determined the plasma and floating potentials of an ionization zone (spoke) in a direct current magnetron sputtering discharge. Measurements were recorded in a space and time resolved manner, which allowed us to make a three-dimensional representation of the plasma potential. From this information we could derive the related electric field, space charge, and the related spatial distribution of electron heating. The data reveal the existence of strong electric fields parallel and perpendicular to the target surface. The largest E-fields result from a double layer structure at the leading edge of the ionization zone. We suggest that the double layer plays a crucial role in the energization of electrons since electrons can gain several 10 eV of energy when crossing the double layer. We find sustained coupling between the potential structure, electron heating, and excitation and ionization processes as electrons drift over the magnetron target. The brightest region of an ionization zone is present right after the potential jump, where drifting electrons arrive and where most local electron heating occurs. The ionization zone intensity decays as electrons continue to drift in the Ez × B direction, losing energy by inelastic collisions; electrons become energized again as they cross the potential jump. This results in the elongated, arrowhead-like shape of the ionization zone. The ionization zone moves in the -Ez × B direction from which the to-be-heated electrons arrive and into which the heating region expands; the zone motion is dictated by the force of the local electric field on the ions at the leading edge of the ionization zone. We hypothesize that electron heating caused by the potential jump and physical processes associated with the double layer also apply to magnetrons at higher discharge power, including high power impulse magnetron sputtering.

  11. Investigation of plasma spokes in reactive high power impulse magnetron sputtering discharge

    NASA Astrophysics Data System (ADS)

    Hecimovic, A.; Corbella, C.; Maszl, C.; Breilmann, W.; von Keudell, A.

    2017-05-01

    Spokes, localised ionisation zones, are commonly observed in magnetron sputtering plasmas, appearing either with a triangular shape or with a diffuse shape, exhibiting self-organisation patterns. In this paper, we investigate the spoke properties (shape and emission) in a high power impulse magnetron sputtering (HiPIMS) discharge when reactive gas (N2 or O2) is added to the Ar gas, for three target materials; Al, Cr, and Ti. Peak discharge current and total pressure were kept constant, and the discharge voltage and mass flow ratios of Ar and the reactive gas were adjusted. The variation of the discharge voltage is used as an indication of a change of the secondary electron yield. The optical emission spectroscopy data demonstrate that by addition of reactive gas, the HiPIMS plasma exhibits a transition from a metal dominated plasma to the plasma dominated by Ar ions and, at high reactive gas partial pressures, to the plasma dominated by reactive gas ions. For all investigated materials, the spoke shape changed to the diffuse spoke shape in the poisoned mode. The change from the metal to the reactive gas dominated plasma and increase in the secondary electron production observed as the decrease of the discharge voltage corroborate our model of the spoke, where the diffuse spoke appears when the plasma is dominated by species capable of generating secondary electrons from the target. Behaviour of the discharge voltage and maximum plasma emission is strongly dependant on the target/reactive gas combination and does not fully match the behaviour observed in DC magnetron sputtering.

  12. Texture evolution in nanocrystalline iron films deposited using biased magnetron sputtering

    SciTech Connect

    Vetterick, G.; Taheri, M. L.; Baldwin, J. K.; Misra, A.

    2014-12-21

    Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.

  13. Development of high-vacuum planar magnetron sputtering using an advanced magnetic field geometry

    SciTech Connect

    Ohno, Takahiro; Yagyu, Daisuke; Saito, Shigeru Ohno, Yasunori; Itoh, Masatoshi; Uhara, Yoshio; Miura, Tsutomu; Nakano, Hirofumi

    2015-11-15

    A permanent magnet in a new magnetic field geometry (namely, with the magnetization in the radial direction) was fabricated and used for high-vacuum planar magnetron sputtering using Penning discharge. Because of the development of this magnet, the discharge current and deposition rate were increased two to three times in comparison with the values attainable with a magnet in the conventional geometry. This improvement was because the available space for effective discharge of the energetic electrons for the ionization increased because the magnetic field distribution increased in both the axial and radial directions of discharge.

  14. ZnO thin film synthesis by reactive radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Aydoğmuş, Tuna; Elmas, Saliha; Özen, Soner; Ekem, Naci; Balbağ, M. Zafer

    2014-11-01

    In this study, ZnO thin films were deposited on glass substrates by reactive RF magnetron sputtering method at argon-oxygen gas mixing (1:1) atmosphere. Some properties of the synthesized films were investigated by interferometry, UV-vis spectrophotometer, atomic force microscopy, and tensiometer. Tauc method was adopted to estimate the optical band gaps. The band gaps of the deposited films were affected by film thickness. We concluded that the surface composition plays a substantial role in the values of the band gaps. Nanocrystalline structures were detected in all produced samples.

  15. Structural, electrical, and optical properties of diamondlike carbon films deposited by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Broitman, E.; Lindquist, O. P. A.; Hellgren, N.; Hultman, L.; Holloway, B. C.

    2003-11-01

    The electrical and optical properties of diamondlike carbon films deposited by direct current magnetron sputtering on Si substrates at room temperature have been measured as a function of the ion energy (Eion) and ion-to-carbon flux (Jion/JC). The results show that, in the ranges of 5 eV<=Eion<=85 eV and 1.1<=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms, voids, and the surface roughness, are the dominant influences on the resistivity and optical absorption.

  16. Drifting potential humps in ionization zones: The ``propeller blades'' of high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Anders, André; Panjan, Matjaž; Franz, Robert; Andersson, Joakim; Ni, Pavel

    2013-09-01

    Ion energy distribution functions measured for high power impulse magnetron sputtering show features, such as a broad peak at several 10 eV with an extended tail, as well as asymmetry with respect to E ×B, where E and B are the local electric and magnetic field vectors, respectively. Here it is proposed that those features are due to the formation of a potential hump of several 10 V in each of the traveling ionization zones. Potential hump formation is associated with a negative-positive-negative space charge that naturally forms in ionization zones driven by energetic drifting electrons.

  17. Crystallization Kinetics Study on Magnetron-Sputtered Amorphous TiAl Alloy Thin Films

    NASA Astrophysics Data System (ADS)

    Shui, Lu-Yu; Yan, Biao

    2014-04-01

    Crystallization kinetics of magnetron-sputtered amorphous TiAl alloy thin films is investigated by differential scanning calorimetry through isothermal analysis and non-isothermal analysis. In non-isothermal analysis, the Kissinger method and the Ozawa method are used to calculate the apparent activation energy and local activation energy, respectively, in the crystallization processes of amorphous TiAl thin films. Furthermore, the crystallization mechanism is discussed from the investigation of the Avrami exponent by isothermal analysis. In addition, x-ray diffraction is utilized to reveal the grain orientation and evolution during the crystallization of TiAl thin films.

  18. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  19. Study on mixed vanadium oxide thin film deposited by RF magnetron sputtering and its application

    NASA Astrophysics Data System (ADS)

    Ling, Zhang; Jianhui, Tu; Hao, Feng; Jingzhong, Cui

    Vanadium oxide (VOx) thin films were deposited on fused quartz using a pure metal vanadium target by RF reactive magnetron sputtering technique. Film microstructure, valence state, optical transmittance properties were studied. The mixed valence VOx thin films deposited with different thickness were found to be amorphous. And the optical transmittance curves are flatness in certain wavelength region. These films can be used to control the relative light intensity of the rubidium light beam between the rubidium lamp and the vapor cell, in order to optimize the working parameters of the rubidium frequency standard (RAFS).

  20. Ion energies in high power impulse magnetron sputtering with and without localized ionization zones

    SciTech Connect

    Yang, Yuchen; Tanaka, Koichi; Liu, Jason; Anders, André

    2015-03-23

    High speed imaging of high power impulse magnetron sputtering discharges has revealed that ionization is localized in moving ionization zones but localization disappears at high currents for high yield targets. This offers an opportunity to study the effect ionization zones have on ion energies. We measure that ions have generally higher energies when ionization zones are present, supporting the concept that these zones are associated with moving potential humps. We propose that the disappearance of ionization zones is caused by an increased supply of atoms from the target which cools electrons and reduces depletion of atoms to be ionized.

  1. Ground state atomic oxygen in high-power impulse magnetron sputtering: a quantitative study

    NASA Astrophysics Data System (ADS)

    Britun, Nikolay; Belosludtsev, Alexandr; Silva, Tiago; Snyders, Rony

    2017-02-01

    The ground state density of oxygen atoms in reactive high-power impulse magnetron sputtering discharges has been studied quantitatively. Both time-resolved and space-resolved measurements were conducted. The measurements were performed using two-photon absorption laser-induced fluorescence (TALIF), and calibrated by optical emission actinometry with multiple Ar emission lines. The results clarify the dynamics of the O ground state atoms in the discharge afterglow significantly, including their propagation and fast decay after the plasma pulse, as well as the influence of gas pressure, O2 admixture, etc.

  2. Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Sato, Hirotoshi; Nanto, Hidehito; Takata, Shinzo

    1985-10-01

    The detailed study of electrical properties in group III impurity doped ZnO thin films prepared by rf magnetron sputtering is described. The resistivity is lowered by doping of B, Al, Ga and In into ZnO films. The characteristic features of ZnO films doped with group III elements except for B are their high carrier concentration and low mobility. Variation of the mobility with the impurity content is roughly governed by the ionized impurity scattering. It is shown that the doped ZnO films exhibit the resistivity dependence on film thickness below 300 nm.

  3. Studies of PMMA sintering foils with and without coating by magnetron sputtering Pd

    NASA Astrophysics Data System (ADS)

    Cutroneo, M.; Mackova, A.; Torrisi, L.; Vad, K.; Csik, A.; Ando', L.; Svecova, B.

    2017-09-01

    Polymethylmethacrylate thin foils were prepared by using physical and chemical processes aimed at changing certain properties. The density and the optical properties were changed obtaining clear and opaque foils. DC magnetron sputtering method was used to cover the foils with thin metallic palladium layers. The high optical absorbent foils were obtained producing microstructured PMMA microbeads with and without thin metallic coatings. Rutherford Backscattering Spectroscopy, optical investigation and microscopy were employed to characterize the prepared foils useful in the field study of laser-matter interaction.

  4. Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

    SciTech Connect

    Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore, Singapore; Andersson, Joakim; Ni, Pavel; Anders, Andre

    2013-07-17

    Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

  5. Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

    SciTech Connect

    Vitelaru, Catalin; Lundin, Daniel; Brenning, Nils; Minea, Tiberiu

    2013-09-02

    The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

  6. Friction characteristics of r. f. magnetron sputtered C and C:N thin films.

    NASA Astrophysics Data System (ADS)

    Sobota, Jaroslav

    Carbon and C:N layers were prepared using the commercially available Leybold-Heraeus Z 550 radio frequency magnetron sputtering plant. A graphite target of high purity (99.999 % C) was used. The tribological testing was performed with a reciprocating ball-on-disc tribometer. The sliding distance on the coating was defined as the time at which a scoring occurs, and the friction coefficient exhibits an abrupt increase. From this, and from the known amplitude of the reciprocating ball, the sliding distance was evaluated.

  7. Surface functionalization of nanostructured LaB6-coated Poly Trilobal fabric by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wu, Yan; Zhang, Lin; Min, Guanghui; Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao

    2016-10-01

    Nanostructured LaB6 films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV-vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB6 film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  8. In situ preparation of Y-Ba-Cu-O superconducting thin films by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Li, H. C.; Linker, G.; Ratzel, F.; Smithey, R.; Geerk, J.

    1988-03-01

    Thin superconducting films of YBa2Cu3O7 have been prepared by magnetron sputtering from targets of sintered material in an oxygen-argon atmosphere. The compositional and structural properties were studied by Rutherford backscattering and X-ray diffraction. The films were deposited at substrate temperatures between 580 and 800 C. It was found that the material grows in the oxygen-deficient tetragonal phase. In situ heat treatment at 430 C in pure O2 atmosphere generates the orthorhombic structure, and the films on sapphire and SrTiO3-coated sapphire substrates show the full superconducting transition at 83 K.

  9. Anomalous transmission of Ag/ZnO nanocomposites prepared by a magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Machnev, Andrey A.; Shuliatjev, Alexei S.; Mironov, Andrey E.; Gromov, Dmitry G.; Mitrokhin, Vladimir; Mel'nikov, Igor V.; Haus, Joseph W.

    2014-03-01

    Single layer and double layer thin ZnO films with Ag nano-clusters on top and between them are fabricated by magnetron sputtering with subsequent annealing procedures. Transmission spectra measurements of the Ag/ZnO nanocomposite shows that a disordering (yet controllable) annealing modification, leads to a high transmission in the near- to the mid-IR spectral regimes. The spectra also show oscillations in the visible wavelength regime due to the excitation of surface plasmons that propagate along the surface of the nano-cluster. The behavior reported here is of interest for future implementation of new sub-wavelength, nanoplasmonic devices.

  10. Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate.

    PubMed

    Quah, Hock Jin; Cheong, Kuan Yew

    2013-08-14

    An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms contributing to leakage current of the investigated sample were discussed and correlated with metal-oxide-semiconductor characteristics of this sample.

  11. Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

    SciTech Connect

    Yang, Yuchen; Zhou, Xue; Liu, Jason X.; Anders, André

    2016-01-18

    We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed.

  12. Venting temperature determines surface chemistry of magnetron sputtered TiN films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Mráz, S.; Hultman, L.; Schneider, J. M.

    2016-01-01

    Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors, including exposure to residual process gases following the growth and the venting temperature Tv, each affecting the surface chemistry, are addressed. It is demonstrated for the TiN model materials system that Tv has a substantial effect on the composition and thickness-evolution of the reacted surface layer and should therefore be reported. The phenomena are also shown to have impact on the reliable surface characterization by x-ray photoelectron spectroscopy.

  13. Venting temperature determines surface chemistry of magnetron sputtered TiN films

    SciTech Connect

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2016-01-25

    Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors, including exposure to residual process gases following the growth and the venting temperature T{sub v}, each affecting the surface chemistry, are addressed. It is demonstrated for the TiN model materials system that T{sub v} has a substantial effect on the composition and thickness-evolution of the reacted surface layer and should therefore be reported. The phenomena are also shown to have impact on the reliable surface characterization by x-ray photoelectron spectroscopy.

  14. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  15. Microstructure and residual stress of magnetron sputtered nanocrystalline palladium and palladium gold films on polymer substrates

    SciTech Connect

    Castrup, Anna; Kuebel, Christian; Scherer, Torsten; Hahn, Horst

    2011-03-15

    The authors report the structural properties and residual stresses of 500-nm-thick nanocrystalline Pd and PdAu films on compliant substrates prepared by magnetron sputtering as a function of the pressure of the Ar-sputtering gas. Films were analyzed by x-ray diffraction, cross-sectional transmission electron microscopy, and x-ray photoelectron spectroscopy. At low pressures the metal films exhibit strong compressive stresses, which rapidly change to highly tensile with increasing pressure, and then gradually decrease. Along with this effect a change in microstructure is observed from a dense equiaxed structure at low pressures to distinctive columns with reduced atomic density at the column walls at higher pressures. The preparation of nearly stress-free dense nanocrystalline films is demonstrated.

  16. Cleaning of HT-7 Tokamak Exposed First Mirrors by Radio Frequency Magnetron Sputtering Plasma

    NASA Astrophysics Data System (ADS)

    Yan, Rong; Chen, Junling; Chen, Longwei; Ding, Rui; Zhu, Dahuan

    2014-12-01

    The stainless steel (SS) first mirror pre-exposed in the deposition-dominated environment of the HT-7 tokamak was cleaned in the newly built radio frequency (RF) magnetron sputtering plasma device. The deposition layer on the FM surface formed during the exposure was successfully removed by argon plasma with a RF power of about 80 W and a gas pressure of 0.087 Pa for 30 min. The total reflectivity of the mirrors was recovered up to 90% in the wavelength range of 300-800 nm, while the diffuse reflectivity showed a little increase, which was attributed to the increase of surface roughness in sputtering, and residual contaminants. The FMs made from single crystal materials could help to achieve a desired recovery of specular reflectivity in the future.

  17. Particle visualization in high-power impulse magnetron sputtering. I. 2D density mapping

    SciTech Connect

    Britun, Nikolay Palmucci, Maria; Konstantinidis, Stephanos; Snyders, Rony

    2015-04-28

    Time-resolved characterization of an Ar-Ti high-power impulse magnetron sputtering discharge has been performed. This paper deals with two-dimensional density mapping in the discharge volume obtained by laser-induced fluorescence imaging. The time-resolved density evolution of Ti neutrals, singly ionized Ti atoms (Ti{sup +}), and Ar metastable atoms (Ar{sup met}) in the area above the sputtered cathode is mapped for the first time in this type of discharges. The energetic characteristics of the discharge species are additionally studied by Doppler-shift laser-induced fluorescence imaging. The questions related to the propagation of both the neutral and ionized discharge particles, as well as to their spatial density distributions, are discussed.

  18. Hydroxyapatite coatings on nanotubular titanium dioxide thin films prepared by radio frequency magnetron sputtering.

    PubMed

    Shin, Jinho; Lee, Kwangmin; Koh, Jeongtae; Son, Hyeju; Kim, Hyunseung; Lim, Hyun-Pil; Yun, Kwidug; Oh, Gyejeong; Lee, Seokwoo; Oh, Heekyun; Lee, Kyungku; Hwang, Gabwoon; Park, Sang-Won

    2013-08-01

    In this study, hydroxyapatite (HA) was coated on anodized titanium (Ti) surfaces through radio frequency magnetron sputtering in order to improve biological response of the titanium surface. All the samples were blasted with resorbable blasting media (RBM). RBM-blasted Ti surface, anodized Ti surface, as-sputtered HA coating on the anodized Ti surface, and heat-treated HA coating on the anodized Ti surface were prepared. The samples were characterized using scanning electron microscopy and X-ray photoemission spectroscopy, and biologic responses were evaluated. The top of the TiO2 nanotubes was not closed by HA particles when the coating time is less than 15 minutes. It was demonstrated that the heat-treated HA was well-crystallized and this enhanced the cell attachment of the anodized Ti surface.

  19. Metal negative ion production by a planar magnetron sputter type radio frequency ion source

    NASA Astrophysics Data System (ADS)

    Yoshioka, K.; Kanda, S.; Kasuya, T.; Wada, M.

    2017-08-01

    A planar magnetron sputter type ion source has been operated to investigate metal negative ion production. Radio frequency power at 13.56 MHz was directly supplied to the planar target made of 2 mm thick Cu disk to maintain plasma discharge and induce DC self-bias to the target for sputtering. Beam profile was obtained and the peak of negative ion beam profile was shifted to 6 mm as the beam traversed the 32 mT magnetic field in the region of the plasma grid. Extraction of Cu- beam was performed and the Cu- beam current was found consisted of two components: Cu-(surface) and Cu-(volume). Negative ion spectra were observed to measure the ratio of the surface component to the volume component. The surface component of Cu- occupied 67% of the total beam at the maximum, while it decreased the fraction down to about 50% as the source pressure was increased.

  20. Effect of surface treatment on adhesion strength between magnetron sputtered copper thin films and alumina substrate

    NASA Astrophysics Data System (ADS)

    Lim, Ju Dy; Lee, Pui Mun; Rhee, Daniel Min Woo; Leong, Kam Chew; Chen, Zhong

    2015-11-01

    A number of surface pre-treatments have been studied for their effectiveness on the adhesion strength between magnetron sputtered copper (Cu) thin film and polycrystalline alumina (Al2O3) substrate. The treatments include organic solvent cleaning, acid washing, heat treatment, plasma cleaning, and they were organized into different sequences in order to evaluate their individual contribution to the film adhesion. Adhesion strength was measured mechanically using a pull test. By proper pre-treatment, the adhesive strength of at least 34 MPa can be achieved with direct sputtering of Cu thin film onto the Al2O3 substrate. With the help of XPS, SEM, XRD, TGA and contact angle measurement, the effect of the different substrate surface treatment techniques has been elucidated.

  1. Biomineralization capability of adherent bio-glass films prepared by magnetron sputtering.

    PubMed

    Stan, G E; Pina, S; Tulyaganov, D U; Ferreira, J M F; Pasuk, I; Morosanu, C O

    2010-04-01

    Radiofrequency magnetron sputtering deposition at low temperature (150 degrees C) was used to deposit bioactive glass coatings onto titanium substrates. Three different working atmospheres were used: Ar 100%, Ar + 7%O(2), and Ar + 20%O(2). The preliminary adhesion tests (pull-out) produced excellent adhesion values (approximately 75 MPa) for the as-deposited bio-glass films. Bioactivity tests in simulated body fluid were carried out for 30 days. SEM-EDS, XRD and FTIR measurements were performed. The tests clearly showed strong bioactive features for all the prepared films. The best biomineralization capability, expressed by the thickest chemically grown carbonated hydroxyapatite layer, was obtained for the bio-glass coating sputtered in a reactive atmosphere with 7% O(2).

  2. Integration of in situ RHEED with magnetron sputter deposition for atomic layer controlled growth

    NASA Astrophysics Data System (ADS)

    Podkaminer, Jacob P.

    Epitaxial thin films continue to be one of the most promising topics within electronic materials research. Sputter deposition is one process by which these films can be formed and is a widely used growth technique for a large range of technologically important material systems. Epitaxial films of carbides, nitrides, metals, oxides and more can all be formed during the sputter process which offers the ability to deposit smooth and uniform films from the research level up to an industrial scale. This tunable kinematic deposition process excels in easily adapting for a large range of environments and growth procedures. Despite the vast advantages associated with sputter deposition, there is a significant lack of in situ analysis options during sputtering. In particular, the area of real time atomic layer control is severely deficient. Atomic layer controlled growth of epitaxial thin films and artificially layered superlattices is critical for both understanding their emergent phenomena and engineering novel material systems and devices. Reflection high-energy electron diffraction (RHEED) is one of the most common in situ analysis techniques during thin film deposition that is rarely used during sputtering due to the strong permanent magnets in magnetron sputter sources and their effect on the RHEED electron beam. In this work we have solved this problem and designed a novel way to deter the effect of the magnets for a wide range of growth geometries and demonstrate the ability for the first time to have layer by layer control during sputter deposition by in situ RHEED. A novel growth chamber that can seamlessly change between pulsed laser deposition and sputtering with RHEED for the growth of complex heterostructures has been designed and implemented. Epitaxial thin films of LaAlO3, La1-xSrxMnO3, and SrRuO3 have all been deposited by sputtering and shown to exhibit clear and extended RHEED oscillations. To solve the magnet issue, a finite element model has been

  3. Natural fiber composites with EMI shielding function fabricated using VARTM and Cu film magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Xia, Changlei; Ren, Han; Shi, Sheldon Q.; Zhang, Hualiang; Cheng, Jiangtao; Cai, Liping; Chen, Kathleen; Tan, Hwa-Shen

    2016-01-01

    To fabricate kenaf fiber composites with electromagnetic interference (EMI) shielding function, the technique of vacuum-assisted resin transfer molding (VARTM) and Cu film magnetron sputtering were employed. The EMI shielding effectiveness (SE) and composite surface characteristics were examined with PNA Network Analyzer, Quanta 200 environmental scanning electron microscope and OCA20 contact angle meter. After being Cu-sputter coated for 0.5 h, 1 h, 2 h, and 3 h, the EMI SE values were increased to be 23.8 dB, 32.5 dB, 43.3 dB, and 48.3 dB, which denoted 99.5799%, 99.9437%, 99.9953%, or 99.9985% incident signal was blocked, respectively. The SEM observations revealed that the smoother surface of the composites was obtained by longer time sputtering, resulting in the SE improvement. The contact angle increased from 49.6° to 129.5° after 0.5 h sputtering, which indicated that the coated Cu film dramatically improved the hydrophobic property of composite. When the coating time increased to 3 h, the contact angle decreased to 51.0° because the composite surface roughness decreased with the increase in coating time.

  4. Distance-dependent plasma composition and ion energy in high power impulse magnetron sputtering

    SciTech Connect

    Ehiasarian, Arutiun P; Andersson, Joakim; Anders, André

    2010-04-18

    The plasma composition of high power impulse magnetron sputtering (HIPIMS) has been studied for titanium and chromium targets using a combined energy analyser and quadrupole mass spectrometer. Measurements were done at distances from 50 to 300 mm from the sputtering target. Ti and Cr are similar in atomic mass but have significantly different sputter yields, which gives interesting clues on the effect of the target on plasma generation and transport of atoms. The Ti and Cr HIPIMS plasmas operated at a peak target current density of ~;;0.5 A cm-2. The measurements of the argon and metal ion content as well as the ion energy distribution functions showed that (1) singly and doubly charged ions were found for argon as well as for the target metal, (2) the majority of ions were singly charged argon for both metals at all distances investigated, (3) the Cr ion density was maintained to distances further from the target than Ti. Gas rarefaction was identified as a main factor promoting transport of metal ions, with the stronger effect observed for Cr, the material with higher sputter yield. Cr ions were found to displace a significant portion of the gas ions, whereas this was less evident in the Ti case. The observations indicate that the presence of metal vapour promotes charge exchange and reduces the electron temperature and thereby practically prevents the production of Ar2+ ions near the target. The content of higher charge states of metal ions depends on the probability of charge exchange with argon.

  5. Duty cycle control in reactive high-power impulse magnetron sputtering of hafnium and niobium

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Treverrow, B.; Murdoch, B.; Xie, D.; Ross, A. E.; Partridge, J. G.; Falconer, I. S.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-06-01

    Instabilities in reactive sputtering have technological consequences and have been attributed to the formation of a compound layer on the target surface (‘poisoning’). Here we demonstrate how the duty cycle of high power impulse magnetron sputtering (HiPIMS) can be used to control the surface conditions of Hf and Nb targets. Variations in the time resolved target current characteristics as a function of duty cycle were attributed to gas rarefaction and to the degree of poisoning of the target surface. As the operation transitions from Ar driven sputtering to metal driven sputtering, the secondary electron emission changes and reduces the target current. The target surface transitions smoothly from a poisoned state at low duty cycles to a quasi-metallic state at high duty cycles. Appropriate selection of duty cycle increases the deposition rate, eliminates the need for active regulation of oxygen flow and enables stable reactive deposition of stoichiometric metal oxide films. A model is presented for the reactive HIPIMS process in which the target operates in a partially poisoned mode with different degrees of oxide layer distribution on its surface that depends on the duty cycle. Finally, we show that by tuning the pulse characteristics, the refractive indices of the metal oxides can be controlled without increasing the absorption coefficients, a result important for the fabrication of optical multilayer stacks.

  6. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    SciTech Connect

    Purandare, Yashodhan Ehiasarian, Arutiun; Hovsepian, Papken; Santana, Antonio

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  7. Electrical and structural properties of the Ta/Ag thin films prepared by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Moghri Moazzen, M. A.; Taiebyzadeh, P.; Borghei, S. M.

    2017-07-01

    Tantalum on silver (Ta/Ag) thin films have quickly increased into high research for applied science with the promise of suitable for high temperatures environments and microsystems for electronics applications. Ag and Ta/Ag thin films were deposited on silicon substrates by dc magnetron sputtering method. We choose the dc magnetron sputtering method because it has many advantages, such as high growth rate, the possibility of large area deposition, and low cost. X-ray diffraction (XRD) analysis and four point probe (FPP) were used for determining the prepared samples. For Ag thin film deposited in room temperature, there are no peaks corresponding to Ag in the XRD pattern which demonstrates amorphous structure. Also, the XRD pattern of Ta/Ag thin film illustrates that the peak of Ta has grown to the crystal direction (002), which shows that the structure of deposited Ta layer on Ag thin film becomes a crystalline state from amorphous state. The relationship between thin film resistivity and Ta/Ag film thicknesses are investigated in this paper.

  8. Continuous and nanostructured TiO2 films grown by dc sputtering magnetron.

    PubMed

    Sánchez, O; Vergara, L; Font, A Climent; de Melo, O; Sanz, R; Hernández-Vélez, M

    2012-12-01

    The growth of Anatase nanostructured films using dc reactive magnetron sputtering and post-annealing treatment is reported. TiO2 has been deposited on Porous Anodic Alumina Films used as templates which were previously grown in phosphoric acid solution and etched to modify their pore diameters. This synthesis via results in the formation of vertically aligned and spatially ordered TiO2 nanostructures replicating the underlying template. Previously, the growth optimization of TiO2 thin films deposited by dc magnetron sputtering on flat silicon substrates was done. The crystalline structure and Ti in-depth concentration profile were determined by grazing incidence X-ray diffraction and Rutherford backscattering spectrometry, respectively. The surface morphology of the samples was explored by mean of a Field Emission Gun scanning electron microscope. Optical properties of the nanostructured samples were studied by using the reflectance spectra received in the UV-visible range. In these spectra different band gap values and complex light absorption features were observed.

  9. Corrosion and Nano-mechanical Behaviors of Magnetron Sputtered Al-Mo Gradient Coated Steel

    NASA Astrophysics Data System (ADS)

    Venugopal, A.; Srinath, J.; Ramesh Narayanan, P.; Sharma, S. C.; Venkitakrishnan, P. V.

    2017-01-01

    A gradient three-layer Al-Mo coating was deposited on steel using magnetron sputtering method. The corrosion and nano-mechanical properties of the coating were examined by electrochemical impedance spectroscopy and nano-indentation tests and compared with the conventional electroplated cadmium and IVD aluminum coatings. Electrochemical impedance spectroscopy was performed by immersing the coated specimens in 3.5% NaCl solution, and the impedance behavior was recorded as a function of immersion time. The mechanical properties (hardness and elastic modulus) were obtained from each indentation as a function of the penetration depth across the coating cross section. The adhesion resistance of the coatings was evaluated by scratch tests on the coated surface using nano-indentation method. The results show that the gradient Al-Mo coating exhibits better corrosion resistance than the other coatings in view of the better microstructure. The impedance results were modeled using appropriate electrical equivalent circuits for all the coated systems. The uniform, smooth and dense Al-Mo coating obtained by magnetron sputtering exhibits good adhesion with the steel substrate as per scratch test method. The poor corrosion resistance of the later coatings was shown to be due to the defects/cracks as well as the lesser adhesion of the coatings with steel. The hardness and elastic modulus of the Al-Mo coating are found to be high when compared to the other coatings.

  10. Codeposition of amorphous zinc tin oxide using high power impulse magnetron sputtering: characterisation and doping

    NASA Astrophysics Data System (ADS)

    Tran, H. N.; Mayes, E. L. H.; Murdoch, B. J.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.; Holland, A. S.; Partridge, J. G.

    2017-04-01

    Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC magnetron sputtering mode) targets yielded a gradient in the Zn:Sn ratio across a 4-inch diameter sapphire substrate. The electrical and optical properties of the film were studied as a function of composition. As-deposited, the films were amorphous, transparent and semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, 100 mTorr H2) and resulted in significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations of ˜1 × 1017 cm-3 and mobilities of up to 13 cm2 V-1 s-1. These characteristics are suitable for device applications and proved stable. X-ray photoelectron spectroscopy was used to explore the valence band structure and to show that downward surface band-bending resulted from OH attachment. The results suggest that HiPIMS can produce dense, high quality amorphous ZTO suitable for applications including transparent thin film transistors.

  11. Formation of sensor array on the AFM chip surface by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shumov, I. D.; Kanashenko, S. L.; Ziborov, V. S.; Ivanov, Yu D.; Archakov, A. I.; Pleshakova, T. O.

    2017-01-01

    Development of atomic force microscopy (AFM)-based nanotechnological approaches to highly sensitive detection of proteins is a perspective direction in biomedical research. These approaches use AFM chips to concentrate the target proteins from the test solution volume (buffer solution, diluted biological fluid) onto the chip surface for their subsequent registration on the chip surface by AFM. Atomic force microscope is a molecular detector that enables protein detection at ultra-low (subfemtomolar) concentrations in single-molecule counting mode. Due to extremely high sensitivity of AFM, its application for multiplexed protein detection is of great interest for use in proteomics and diagnostic applications. In this study, AFM chips containing an array of sensor areas have been fabricated. Magnetron sputtering of chromium and tungsten nanolayers has been used to form optically visible metallic marks on the AFM chip surface to provide necessary precision of AFM probe positioning against each sensor area for scanning. It has been demonstrated that the marks formed by magnetron sputtering of Cr and W are stable on the surface of the AFM chips during the following activation and intensive washing of this surface. The results obtained in our present study allow application of the developed chips for multiplexed protein analysis by AFM.

  12. Characteristics of CdS: Cu Photosensitive Films Obtatined by Magnetron Sputtering Method

    NASA Astrophysics Data System (ADS)

    Guseinov, Emil; Jafarov, Maarif; Gasanov, Ilham; Nasibov, Ilgar

    1997-02-01

    In2O3-CdS sandwich structures with thickness 0,5-1,5 mm have been obtained by magnetron sputtering method on glass substrates. Investigations of dark and light conductivity, the spectrum and kinetics of photoconductivity of CdS films have been carried out. The studies of the current-voltage characteristics of In2O3-CdS have been performed based on the generalized approximate theory of injection contact phenomena in semiconductors. The volume (n0) and precontact (nc) change carrier concentration, recombination (Nrec) and trapping (Ncn) center concentration, the absorption edge and the transmission coefficient, the region and the maximum of the photocurrent spectral dependence, the life time of nonequilibrium and minority carriers have been determined. With increasing the annealed sample thickness the conductivity has been shown to decrease as L-3, and the voltage at transition from the Ohm's law to a quadratic law increases as L2. It has been found that the In2O3 contact is close to a neutral one as a methalic transparent electrode than In. The CdS films obtained by magnetron sputtering method are characterized by high reproducibility, sensitivity, electric strength (106 V/cm), high resistivity (r˜ 109-1010 Ohm. cm), optical transmission (more than 60%). The In2O3-CdS structure is useful as the basic material of an image converter.

  13. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    NASA Astrophysics Data System (ADS)

    Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

    2017-08-01

    The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2Rg film thickness, where Rg ∼ 20 nm (Rg is the unperturbed radius of gyration of polystyrene, defined by Rg = 0.272 √M0, and M0 is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  14. Substrate Frequency Effects on Cr x N Coatings Deposited by DC Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Obrosov, Aleksei; Naveed, Muhammad; Volinsky, Alex A.; Weiß, Sabine

    2016-11-01

    Controlled ion bombardment is a popular method to fabricate desirable coating structures and modify their properties. Substrate biasing at high frequencies is a possible technique, which allows higher ion density at the substrate compared with DC current bias. Moreover, high ion energy along with controlled adatom mobility would lead to improved coating growth. This paper focuses on a similar type of study, where effects of coating growth and properties of DC magnetron-sputtered chromium nitride (Cr x N) coatings at various substrate bias frequencies are discussed. Cr x N coatings were deposited by pulsed DC magnetron sputtering on Inconel 718 and (100) silicon substrates at 110, 160 and 280 kHz frequency at low duty cycle. Coating microstructure and morphology were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), scratch adhesion testing and nanoindentation. Results indicate a transformation of columnar into glassy structure of Cr x N coatings with the substrate bias frequency increase. This transformation is attributed to preferential formation of the Cr2N phase at high frequencies compared with CrN at low frequencies. Increase in frequency leads to an increase in deposition rate, which is believed to be due to increase in plasma ion density and energy of the incident adatoms. An increase in coating hardness along with decrease in elastic modulus was observed at high frequencies. Scratch tests show a slight increase in coating adhesion, whereas no clear increase in coating roughness can be found with the substrate bias frequency.

  15. Substrate Frequency Effects on Cr x N Coatings Deposited by DC Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Obrosov, Aleksei; Naveed, Muhammad; Volinsky, Alex A.; Weiß, Sabine

    2017-01-01

    Controlled ion bombardment is a popular method to fabricate desirable coating structures and modify their properties. Substrate biasing at high frequencies is a possible technique, which allows higher ion density at the substrate compared with DC current bias. Moreover, high ion energy along with controlled adatom mobility would lead to improved coating growth. This paper focuses on a similar type of study, where effects of coating growth and properties of DC magnetron-sputtered chromium nitride (Cr x N) coatings at various substrate bias frequencies are discussed. Cr x N coatings were deposited by pulsed DC magnetron sputtering on Inconel 718 and (100) silicon substrates at 110, 160 and 280 kHz frequency at low duty cycle. Coating microstructure and morphology were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), scratch adhesion testing and nanoindentation. Results indicate a transformation of columnar into glassy structure of Cr x N coatings with the substrate bias frequency increase. This transformation is attributed to preferential formation of the Cr2N phase at high frequencies compared with CrN at low frequencies. Increase in frequency leads to an increase in deposition rate, which is believed to be due to increase in plasma ion density and energy of the incident adatoms. An increase in coating hardness along with decrease in elastic modulus was observed at high frequencies. Scratch tests show a slight increase in coating adhesion, whereas no clear increase in coating roughness can be found with the substrate bias frequency.

  16. Study on nitrogenated amorphous carbon films prepared by unbalanced magnetron sputtering

    SciTech Connect

    Shi, J.R.

    2006-02-01

    Nitrogenated amorphous carbon (a-CN{sub x}) films were prepared by unbalanced magnetron sputtering (UBMS) at different N{sub 2}/Ar gas flow rate ratios and different bias voltages. The films were characterized using x-ray photoelectron spectroscopy, Raman scattering, nanoindenter, atomic force microscopy nanoscratch, and contact angle measurement. It was found that a negative bias of 150 V is the optimal condition for the formation of sp{sup 3} bonded carbon atoms. As the N{sub 2}/Ar flow rate ratio changes from 0 to 0.47, the nitrogen to carbon ratio in deposited films increases from 0 to 0.22, and the sp{sup 3} fraction of carbon atoms decreases from 0.51 to 0.28. The pure carbon film has the highest sp{sup 3} faction of carbon atoms and therefore the highest hardness and the lowest scratching depth. Comparing to the films prepared by conventional magnetron sputtering, all the a-CN{sub x} films prepared by UBMS show a lower scratching depth. The a-CN{sub x} films have a hydrophilic characteristic with a surface free energy from 56.6 to 65.6 mN/m and a predominant polar component.

  17. Tribological properties, corrosion resistance and biocompatibility of magnetron sputtered titanium-amorphous carbon coatings

    NASA Astrophysics Data System (ADS)

    Dhandapani, Vishnu Shankar; Subbiah, Ramesh; Thangavel, Elangovan; Arumugam, Madhankumar; Park, Kwideok; Gasem, Zuhair M.; Veeraragavan, Veeravazhuthi; Kim, Dae-Eun

    2016-05-01

    Amorphous carbon incorporated with titanium (a-C:Ti) was coated on 316L stainless steel (SS) by magnetron sputtering technique to attain superior tribological properties, corrosion resistance and biocompatibility. The morphology, topography and functional groups of the nanostructured a-C:Ti coatings in various concentrations were analyzed using atomic force microscopy (AFM), Raman, X-Ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Raman and XPS analyses confirmed the increase in sp2 bonds with increasing titanium content in the a-C matrix. TEM analysis confirmed the composite nature of the coating and the presence of nanostructured TiC for Ti content of 2.33 at.%. This coating showed superior tribological properties compared to the other a-C:Ti coatings. Furthermore, electrochemical corrosion studies were performed against stimulated body fluid medium in which all the a-C:Ti coatings showed improved corrosion resistance than the pure a-C coating. Preosteoblasts proliferation and viability on the specimens were tested and the results showed that a-C:Ti coatings with relatively high Ti (3.77 at.%) content had better biocompatibility. Based on the results of this work, highly durable coatings with good biocompatibility could be achieved by incorporation of optimum amount of Ti in a-C coatings deposited on SS by magnetron sputtering technique.

  18. Study on the effect of target on plasma parameters of magnetron sputtering discharge plasma

    SciTech Connect

    Saikia, P.; Kakati, B.; Saikia, B. K.

    2013-10-15

    In this study, the effect of magnetron target on different plasma parameters of Argon/Hydrogen (Ar - H{sub 2}) direct current (DC) magnetron discharge is examined. Here, Copper (Cu) and Chromium (Cr) are used as magnetron targets. The value of plasma parameters such as electron temperature (kT{sub e}), electron density (N{sub e}), ion density (N{sub i}), degree of ionization of Ar, and degree of dissociation of H{sub 2} for both the target are studied as a function of input power and hydrogen content in the discharge. The plasma parameters are determined by using Langmuir probe and Optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. The obtained results show that electron and ion density decline with gradual addition of Hydrogen in the discharge and increase with rising input power. It brings significant changes on the degree of ionization of Ar and dissociation of H{sub 2}. The enhanced value of electron density (N{sub e}), ion density (N{sub i}), degree of Ionization of Ar, and degree of dissociation of H{sub 2} for Cr compared to Cu target is explained on the basis of it's higher Ion Induced Secondary Electron Emission Coefficient (ISEE) value.

  19. Modeling of plasma-target interaction during reactive magnetron sputtering of TiN

    NASA Astrophysics Data System (ADS)

    Möller, W.; Güttler, D.

    2007-11-01

    The nitrogen incorporation at the target during reactive magnetron sputtering of TiN is described by a simple stationary global model of the magnetron plasma, in combination with an analytical two-layer stationary surface model or dynamic collisional computer simulation (TRIDYN) of the surface processes. Results are shown for different nitrogen gas additions in Ar /N2 and Xe /N2 gas mixtures at a total pressure of 0.3Pa and a magnetron current of 0.3A. The nitrogen incorporation predicted by the analytical model is significantly less than obtained from computer simulation. The computer simulation yields nitrogen depth profiles which extend to about 2.5nm, exhibiting a quasirectangular shape in case of stoichiometric saturation with an integrated nitrogen areal density of ˜1.25×1016N/cm2. The stationary-state nitrogen incorporation results from the balance of surface adsorption in connection with recoil implantation, direct ion implantation, and resputtering. The most relevant species are nitrogen gas molecules for adsorption, molecular nitrogen ions for implantation, and inert gas ions for recoil implantation and sputtering. The model results are in good agreement with experiment provided that nonzero sticking of nitrogen gas molecules is assumed on the unsaturated surface. The analytical surface model is preferable, which favors the picture of a continuous transition to bulk and surface saturation rather than discrete local saturation which is inherent in TRIDYN. Also the relative nitrogen incorporation for Xe /N2 versus Ar /N2 gas mixtures is well described.

  20. Localized traveling ionization zones and their importance for the high power impulse magnetron sputtering process

    NASA Astrophysics Data System (ADS)

    Maszl, Christian

    2016-09-01

    High power impulse magnetron sputtering (HiPIMS) is a technique to deposit thin films with superior quality. A high ionization degree up to 90% and the natural occurence of high energetic metal ions are the reason why HiPIMS exceeds direct current magnetron sputtering in terms of coating quality. On the other hand HiPIMS suffers from a reduced efficiency, especially if metal films are produced. Therefore, a lot of research is done by experimentalists and theoreticians to clarify the transport mechanisms from target to substrate and to identify the energy source of the energetic metal ions. Magnetron plasmas are prone to a wide range of wave phenomena and instabilities. Especially, during HiPIMS at elevated power/current densities, symmetry breaks and self-organization in the plasma torus are observed. In this scenario localized travelling ionization zones with certain quasi-mode numbers are present which are commonly referred to as spokes. Because of their high rotation speed compared to typical process times of minutes their importance for thin film deposition was underestimated at first. Recent investigations show that spokes have a strong impact on particle transport, are probably the source of the high energetic metal ions and are therefore the essence of HiPIMS plasmas. In this contribution we will describe the current understanding of spokes, discuss implications for thin film synthesis and highlight open questions. This project is supported by the DFG (German Science Foundation) within the framework of the Coordinated Research Center SFB-TR 87 and the Research Department ``Plasmas with Complex Interactions'' at Ruhr-University Bochum.

  1. Nanoscale and macroscale aluminum nitride deposition via reactive magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Zhang, Guanghai

    The growth of group III nitrides is receiving a great deal of attention due to their potential as materials for optoelectronic devices in the blue to ultraviolet spectral range. This dissertation is primarily focused on deposition of aluminum nitride thin films on both nanofibers and macroscale silicon substrates via reactive magnetron sputtering. The objectives include investigating the feasibility of coating nanofibers to prepare high quality (smooth and crystalline) nanotubes, nanofiber hetero structures and using buffer layers to improve the quality of macroscale AlN thin films. To satisfy the need of nanoscale semiconductor materials, deposition of AlN on poly (meta-phenylene isophthalamide) MPD-I nano-fiber (template) was investigated via reactive magnetron sputtering. The electrospun high-temperature nanofibers with uniform dimensions were heated up to 300°C or higher. The coatings on the fibers were continuous and their morphology and crystal structure (either hexagonal wurtzite structure or cubic zinc-blende structure) were controlled by changing the deposition conditions. After removing the fiber core with organic solvent or by pyrolysis, AlN nanotubes (hollow structures) with inner diameter of 50--100 nm were achieved. As the nanoscale building blocks, nanoscale semiconductor heterostructures with modulated composition can facilitate the generation of devices with various functions. In this work, SiO2-AlN core-shell nanofiber heterostructures with SiO2 core and AlN shell were created by electro-spinning and reactive magnetron sputtering methods. Also the AlN coating (shell) was designed with different morphologies and crystalline properties by controlling the deposition conditions. The critical operating parameters for the formation of different morphologies of AlN shells were investigated. In practice, AlN thin film materials are still widely used for microelectronic and optoelectronic devices. To investigate and develop semiconducting AlN films, the

  2. Synthesizing mixed phase titania nanocomposites with enhanced photoactivity and redshifted photoresponse by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Le

    Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO2 catalysts. The goal of this research was to probe the synthesis-structure-function relationships of the solid-solid interfaces created by the reactive direct current (DC) magnetron sputtering of titanium dioxide. I hypothesize that the reactive DC magnetron sputtering is a useful method for synthesizing photo-catalysts with unique structure including solid-solid interfaces and surface defects that are associated with enhanced photoreactivity as well as a photoresponse shifted to longer wavelengths of light. I showed that sputter deposition provides excellent control of the phase and interface formation as well as the stoichiometry of the films. I explored the effects exerted by the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. I have successfully made pure and mixed phase TiO2 films. These films were characterized with UV-Vis, XPS, AFM, SEM, TEM, XRD and EPR, to determine optical properties, elemental stoichiometry, surface morphology, phase distribution and chemical coordination. Bundles of anatase-rutile nano-columns having high densities of dual-scale of interfaces among and within the columns are fabricated. Photocatalytic performance of the sputtered films as measured by the oxidation of the pollutant, acetaldehyde, and the reduction of CO2 for fuel (CH4) production was compared (normalized for surface area) to that of mixed phase TiO2 fabricated by other methods, including flame hydrolysis powders, and solgel deposited TiO 2 films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and solgel TiO2 based on gas phase reaction of acetaldehyde oxidation under UV light and CO2 reduction under both UV and visible illuminations. The

  3. High power impulse magnetron sputtering and related discharges: scalable plasma sources for plasma-based ion implantation and deposition

    SciTech Connect

    Anders, Andre

    2009-09-01

    High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using `gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated.

  4. Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

    SciTech Connect

    Zhang, Xiaozhi; Yue, Zhenxing Meng, Siqin; Yuan, Lixin

    2014-12-28

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

  5. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  6. Structure and properties of uranium oxide thin films deposited by pulsed dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Dahan, Isaac; Valderrama, Billy; Manuel, Michele V.

    2014-05-01

    Crystalline uranium oxide thin films were deposited in an unbalanced magnetron sputtering system by sputtering from a depleted uranium target in an Ar + O2 mixture using middle frequency pulsed dc magnetron sputtering. The substrate temperature was constantly maintained at 500 °C. Different uranium oxide phases (including UO2-x, UO2, U3O7 and U3O8) were obtained by controlling the percentage of the O2 flow rate to the total gas flow rate (f) in the chamber. The crystal structure of the films was characterized using X-ray diffraction and the microstructure of the films was studied using transmission electron microscopy and atom probe tomography. When the f was below 10%, the film contains a mixture of metallic uranium and UO2-x phases. As the f was controlled in the range of 10-13%, UO2 films with a (2 2 0) preferential orientation were obtained. The oxide phase rapidly changed to a mixture of U3O7 and U3O8 as the f was increased to the range of 15-18%. Further increasing the f to 20% and above, polycrystalline U3O8 thin films with a (0 0 1) preferential orientation were formed. The hardness and Young's modulus of the uranium oxide films were evaluated using nanoindentation. The film containing a single UO2 phase exhibited the maximum hardness of 14.3 GPa and a Young's modulus of 195 GPa. The UO2 thin film also exhibited good thermal stability in that no phase change was observed after annealing at 600 °C in vacuum for 104 h.

  7. Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

    SciTech Connect

    Voronov, D. L.; Cambie, R.; Dhuey, S.; Gullikson, E. M.; Warwick, T.; Yashchuk, V. V.; Padmore, H. A.; Gawlitza, P.; Braun, S.

    2012-05-01

    Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects, we used an ion-beam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr{sup +} ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

  8. Optical and electrical properties of thin NiO films deposited by reactive magnetron sputtering and spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Parkhomenko, H. P.; Solovan, M. N.; Mostovoi, A. I.; Orletskii, I. G.; Parfenyuk, O. A.; Maryanchuk, P. D.

    2017-06-01

    Thin NiO films are deposited by reactive magnetron sputtering and spray pyrolysis. The main optical constants, i.e., refractive index n(λ), absorption coefficient α(λ), extinction coefficient k(λ), and thickness d, are determined. The temperature dependence of the resistance of thin films is found, and the activation energy of films deposited by different methods is determined.

  9. The influence of N2 flow rate on Ar and Ti Emission in high-pressure magnetron sputtering system plasma

    NASA Astrophysics Data System (ADS)

    How, Soo Ren; Nayan, Nafarizal; Lias, Jais

    2017-03-01

    For ionized physical vapor deposition (known as IPVD) technique, investigation on the ionization mechanism of titanium atoms is very important during the deposition of titanium nitride (TiN) thin film using reactive magnetron sputtering plasma. The introduction of nitrogen gas into the chamber discharge leads to modifications of plasma parameters and ionization mechanism of transition species. In this work, an investigation on the influence of nitrogen flow rate on spectrum properties of argon and titanium during the deposition process have been carried out. The experimental configuration consists of OES and structure of magnetron sputtering device with the turbo molecular pump. A high-pressure magnetron sputtering plasma was used as plasma discharge chamber with various flow rate of nitrogen gas. Optical emission spectroscopy (OES) measurements were employed as plasma diagnostics tool in magnetron sputtering plasma operated at relatively high pressure. OES is a non-invasive plasma diagnostics method and that can detect the atomic and ionic emission during plasma discharge. The flow rate of the Ar and N2 gas are controlled by mass flow controller. The changes of relative emission for both neutral and ionic of argon as well as titanium were observed using optical spectrometer when the nitrogen gas is introduced into the discharged chamber. We found that the titanium emission decreased very rapidly with the flow rate of nitrogen. In addition, the argon emission slightly decreased with the flow rate of nitrogen.

  10. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  11. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-02-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  12. Fabrication and physico-mechanical properties of thin magnetron sputter deposited silver-containing hydroxyapatite films

    NASA Astrophysics Data System (ADS)

    Ivanova, A. A.; Surmeneva, M. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.; Prymak, O.; Epple, M.; Chaikina, M. V.; Surmenev, R. A.

    2016-01-01

    As a measure of the prevention of implant associated infections, a number of strategies have been recently applied. Silver-containing materials possessing antibacterial activity as expected might have wide applications in orthopedics and dentistry. The present work focuses on the physico-chemical characterization of silver-containing hydroxyapatite (Ag-HA) coating obtained by radio frequency (RF) magnetron sputtering. Mechanochemically synthesized Ag-HA powder (Ca10⿿xAgx(PO4)6(OH)2⿿x, x = 1.5) was used as a precursor for sputtering target preparation. Morphology, composition, crystallinity, physico-mechanical features (Young's modulus and nanohardness) of the deposited Ag-HA coatings were investigated. The sputtering of the nanostructured multicomponent target at the applied process conditions allowed to deposit crystalline Ag-HA coating which was confirmed by XRD and FTIR data. The SEM results revealed the formation of the coating with the grain morphology and columnar cross-section structure. The EDX analysis confirmed that Ag-HA coating contained Ca, P, O and Ag with the Ca/P ratio of 1.6 ± 0.1. The evolution of the mechanical properties allowed to conclude that addition of silver to HA film caused increase of the coating nanohardness and elastic modulus compared with those of pure HA thin films deposited under the same deposition conditions.

  13. Antibacterial properties of nano-silver coated PEEK prepared through magnetron sputtering.

    PubMed

    Liu, Xiuju; Gan, Kang; Liu, Hong; Song, Xiaoqing; Chen, Tianjie; Liu, Chenchen

    2017-09-01

    We aimed to investigate the cytotoxicity and antibacterial properties of nano-silver-coated polyetheretherketone (PEEK) produced through magnetron sputtering and provide a theoretical basis for its use in clinical applications. The surfaces of PEEKs were coated with nano-silver at varying thicknesses (3, 6, 9, and 12nm) through magnetron sputtering technology. The resulting coated PEEK samples were classified into the following groups according to the thickness of the nano-silver coating: PEEK-3 (3nm), PEEK-6 (6nm), PEEK-9 (9nm), PEEK-12 (12nm), and PEEK control group. The surface microstructure and composition of each sample were observed by scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive spectrum (EDS) analysis. The water contact angle of each sample was then measured by contact angle meters. A cell counting kit (CCK-8) was used to analyze the cytotoxicity of the mouse fibroblast cells (L929) in the coated groups (n=5) and group test samples (n=6), negative control (polyethylene, PE) (n=6), and positive control group (phenol) (n=6). The antibacterial properties of the samples were tested by co-culturing Streptococcus mutans and Straphylococcus aureus. The bacteria that adhered to the surface of samples were observed by SEM. The antibacterial adhesion ability of each sample was then evaluated. SEM and AFM analysis results showed that the surfaces of control group samples were smooth but compact. Homogeneous silver nano-particles (AgNPs) and nano-silver coating were uniformly distributed on the surface of the coated group samples. Compared with the control samples, the nano-silver coated samples had a significant increase in surface roughness (P<0.05) as the thickness of their nano-silver coating increased. EDS analysis showed that not only C and O but also Ag were present on the surface of the coated samples. Moreover, the water contact angle of modified samples significantly increased after nano-silver coating modification

  14. Study of transparent conducting ZnO:Al films deposited on organic substrate by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Li, J.; Wang, Z. Y.

    2009-03-01

    A Zn-Al metallic target (Al 2 wt.%)has been used to prepare conductive and transparent aluminium-doped Zinc oxide(ZnOAl) films on PI substrate by direct current reactive magnetron sputtering.The structure, crystallinity, optical properties, electrical properties and adhesion were investigated using a range of techniques, including AFM, XRD, spectrophotometry, four-point probe and adhesion tester.The optimal films were prepared with a substrate temperature of 150°C, O2/Ar ration of 2:38 and sputtering power of 80W.The infrared emission properties of films and the feasibility for military application were also discussed in this paper. All the results to date demonstrate that magnetron sputtering is a cost-effective and easy to fabricating technique.

  15. Photocatalytic activity of bipolar pulsed magnetron sputter deposited TiO2/TiWOx thin films

    NASA Astrophysics Data System (ADS)

    Weng, Ko-Wei; Hu, Chung-Hsuan; Hua, Li-Yu; Lee, Chin-Tan; Zhao, Yu-Xiang; Chang, Julian; Yang, Shu-Yi; Han, Sheng

    2016-08-01

    Titanium oxide films were formed by sputtering and then TiWOx films were deposited by bipolar pulsed magnetron sputtering with pure titanium and tungsten metal targets. The sputtering of titanium oxide with tungsten enhanced the orientation of the TiO2 (1 0 1) plane of the specimen assemblies. The main varying parameter was the tungsten pulse power. Titanium oxide sputtered with tungsten using a pulsing power of 50 W exhibited a superior hydrophilic property, and a contact angle of 13.1°. This fabrication conditions maximized the photocatalytic decomposition of methylene blue solution. The mechanism by which the titanium oxide was sputtered with tungsten involves the photogeneration of holes and electron traps, inhibiting the hole-electron recombination, enhancing hydrophilicity and reducing the contact angle.

  16. Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications

    SciTech Connect

    Natarajan, Gomathi; Daniels, S.; Cameron, D. C.; O'Reilly, L.; Mitra, A.; McNally, P. J.; Lucas, O. F.; Rajendra Kumar, R. T.; Reid, Ian; Bradley, A. L.

    2006-08-01

    Copper (I) chloride (CuCl) is a potential candidate for ultraviolet (UV) optoelectronics due to its close lattice match with Si (mismatch less than 0.4%) and a high UV excitonic emission at room temperature. CuCl thin films were deposited using radio frequency magnetron sputtering technique. The influence of target to substrate distance (d{sub ts}) and sputtering pressure on the composition, microstructure, and UV emission properties of the films were analyzed. The films deposited with shorter target to substrate spacing (d{sub ts}=3 cm) were found to be nonstoichiometric, and the film stoichiometry improves when the substrate is moved away from the target (d{sub ts}=4.5 and 6 cm). A further increase in the spacing results in poor crystalline quality. The grain interface area increases when the sputtering pressure is increased from 1.1x10{sup -3} to 1x10{sup -2} mbar at d{sub ts}=6 cm. Room temperature cathodoluminescence spectrum shows an intense and sharp UV exciton (Z{sub 3}) emission at {approx}385 nm with a full width at half maximum of 16 nm for the films deposited at the optimum d{sub ts} of 6 cm and a pressure of 1.1x10{sup -3} mbar. A broad deep level emission in the green region ({approx}515 nm) is also observed. The relative intensity of the UV to green emission peaks decreased when the sputtering pressure was increased, consistent with an increase in grain boundary area. The variation in the stoichiometry and the crystallinity are attributed to the change in the intensity and energy of the flux of materials from the target due to the interaction with the background gas molecules.

  17. Initial Growth Process of Magnetron Sputtering 321 Stainless Steel Films Observed by Afm

    NASA Astrophysics Data System (ADS)

    Jin, Yongzhong; Wu, Wei; Liu, Dongliang; Chen, Jian; Sun, Yali

    To investigate the initial morphological evolution of 321 stainless steel (SS) films, we examined the effect of sputtering time on the morphology of 321 SS film. In this study, a group of samples were prepared at nine different sputtering times within 20 s using radio-frequency (r.f.) magnetron sputtering and characterized by atomic force microscopy (AFM). Only globular-like grains were formed on mica substrates within 6 s, whose average grain size is ~ 21-44 nm. Meanwhile, few grains with larger size are subject to settle at the defect sites of mica substrates. At 8 s, we found large columnar crystallites with the average grain size of 61 nm. From 10 to 14 s, islands grew continuously and coalesced in order to form an interconnected structure containing irregular channels or grooves, with a depth of ~ 3.5-5 nm. Up to 16 s, a nearly continuous film was formed and some new globular-like grains were again present on the film. Study of the AFM image at 20 s suggests that the watercolor masking method designed by us is an effective method, by which we can prepare thin films with steps for the measurement of the thickness of continuous thin films. It is also found that the coverage rate of films increases with the increase in sputtering time (from 2 to 16 s). On the other hand, the increase in root mean square (RMS) roughness is much more significant from 6 to 10 s, and there is a maximum value, 2.81 nm at 10 s due to more islands during deposition. However, RMS roughness decreases with the decrease in length and width of channels or grooves from 10 to 16 s. Especially, a lower RMS roughness of 0.73 nm occurs at 16 s, because of the continuous film produced with a large coverage rate of 98.43%.

  18. Strong blue light emission from Eu-doped SiOC prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Zhenxu; Guo, Yanqing; Wang, Xiang; Song, Chao; Song, Jie; Zhang, Yi; Huang, Rui

    2015-08-01

    The Eu-doped SiOC films were prepared by magnetron sputtering technique at a low temperature of 250°C. The effects of the Eu2O3 deposited power and post-thermal annealing temperature on the PL characteristics of the Eu-doped SiOC films were investigated. It is found that the photoluminescence intensity could be enhanced by more than tenfold by increasing the Eu2O3 deposited power from 20W to 80W. Furthermore, very bright blue light emission can be clearly observed with the naked eye in a bright room for the Eu-doped SiOC films prepared at a Eu2O3 deposited power of 80 W. The improved PL intensity is attributed to the increasing number density of europium silicate clusters as a result of the increasing Eu2O3 deposited power as well as high annealing temperatures.

  19. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  20. Textured aluminium-doped ZnO thin films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Bose, Subhasis; Ray, Swati; Barua, A. K.

    1996-07-01

    The electrical properties of RF magnetron-sputtered aluminium-doped zinc oxide (AZO) films are studied. It is seen that the properties are closely related to their structural properties and doping incorporation. The highly conductive milky AZO films with a wedge-like surface consist of very small crystal grains. It is interesting to note that texturization is obtained in this case at a film thickness less than 0022-3727/29/7/022/img1. At a substrate temperature of 0022-3727/29/7/022/img2, texturization occurs and the resistivity obtained after hydrogen treatment is 0022-3727/29/7/022/img3. This result is very significant and it may accelerate the application of inexpensive AZO films in hydrogenated amorphous silicon solar cells.

  1. Control over the preferred orientation of CIGS films deposited by magnetron sputtering using a wetting layer

    NASA Astrophysics Data System (ADS)

    Yan, Yong; Jiang, Fan; Liu, Lian; Yu, Zhou; Zhang, Yong; Zhao, Yong

    2016-01-01

    A growth method is presented to control the preferred orientation in chalcopyrite CuIn x Ga1- x Se2 (CIGS) thin films grown by magnetron sputtering. Films with (220/204) and (112) preferred orientation as well as randomly oriented films were prepared. The effects of an In2Se3 wetting layer and the working pressure on the texture transition phenomena were examined. A large-grained CIGS film with (220/204) texture was formed at 400°C with the inclusion of a thin (80 nm) In2Se3 layer and liquid phase (excess copper selenide phase) formation, and the reaction mechanism is proposed. The device deposited at 2.0 Pa on an In2Se3 layer exhibited the optimal electrical properties. [Figure not available: see fulltext.

  2. Optical properties study of silicon oxynitride films deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Yong; Gu, Peifu; Ye, Hui; Shen, Weidong

    2004-12-01

    Graded refractive index Silicon Oxy-nitride thin films were deposited by RF magnetron reactive sputtering at different N2/O2 flow ratio. The effects of gas flow ratio on the refractive index, extinction coefficient and composition were studied using UV-VIS spectrophotometer, XPS and FTIR characterization methods. A simple and accurate method is presented for determination of the optical constants and physical thickness of thin films. Which was consisted in fitting the experimental transmission curve with the help of the physical model. The relationship between composition and optical gap and dispersion energy was analyzed using Wemple DiDomenico single-oscillator model. As a result, the samples" refractive index can be controlled from 1.92 to 1.46 by adjusting the gas flow ratio, and the optical gap lies between 5eV~6.5eV.

  3. Magnetic interaction intensity in cobalt samarium thin films fabricated using DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Erwin

    2017-01-01

    Magnetic interaction intensity between magnetic grains was studied for as deposited cobalt samarium alloys in the form of thin films. The films were deposited onto silicon substrates using dc magnetron sputtering technique. The results showed that the magnitude of interaction intensity between magnetic grains in the films was reduced as samarium content increased until 20 at.% Sm. However, the coercivity of the films decreases with further increase in samarium concentration above 20 at. % Sm.. Thus the increase of coercivity in this range of composition (up to 20 at % of samarium) is due to the initial increase in size magnetic grains as well increase in grain separation, which reduces interaction intensity between grains. The effect of samarium content on interaction intensity between magnetic grains in the films is studied.

  4. Y1Ba2Cu3O7-δ thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Takano, Satoshi; Hayashi, Noriki; Okuda, Shigeru; Hitosuyanagi, Hajime

    1989-12-01

    Y1Ba2Cu3O7-δ thin films were grown on (100)MgO and polycrystalline YSZ substrates by RF magnetron sputtering. We measured the magnetic field dependence of Jc of these films. The films grown on MgO with Jc of 4.0x106, 2.9 x106 and 1.5x104 A/cm2 at OT showed 7.1x105 A/cm2 at 8T, 1x104 A/cm2 at 20T and 1.1x103 A/cm2 at 5 T, respectively . We could attain a c-axis oriented film with a Jc of 1.2x104 A/cm2 on YSZ polycrystalline substrate, however, it showed greater degradation than the films grown on MgO in Jc with magnetic field.

  5. Y 1Ba 2Cu 3O 7-δ thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Takano, Satoshi; Hayashi, Noriki; Okuda, Shigeru; Hitosuyanagi, Hajime

    1989-12-01

    Y 1Ba 2Cu 3O 7-δ thin films were grown on (100)MgO and polycrystalline YSZ substrates by RF magnetron sputtering. We measured the magnetic field dependence of Jc of these films. The films grown on MgO with Jc of 4.0x10 6, 2.9 x10 6 and 1.5x10 4 A/cm 2 at OT showed 7.1x10 5 A/cm 2 at 8T, 1x10 4 A/cm 2 at 20T and 1.1x10 3 A/cm 2 at 5 T, respectively . We could attain a c-axis oriented film with a Jc of 1.2x10 4 A/cm 2 on YSZ polycrystalline substrate, however, it showed greater degradation than the films grown on MgO in Jc with magnetic field.

  6. HRTEM Microstructural Characterization of β-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering

    PubMed Central

    Faudoa-Arzate, A.; Arteaga-Durán, A.; Saenz-Hernández, R.J.; Botello-Zubiate, M.E.; Realyvazquez-Guevara, P.R.; Matutes-Aquino, J.A.

    2017-01-01

    Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400 °C for 6 h was followed by a second annealing at 350 °C for 1 h. Film characterization was carried out by X-ray diffraction (XRD), high-resolution electron transmission microscopy (HRTEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques. The β-WO3 final phase grew in form of columnar crystals and its growth plane was determined by HRTEM. PMID:28772559

  7. Physical properties of erbium implanted tungsten oxide filmsdeposited by reactive dual magnetron sputtering

    SciTech Connect

    Mohamed, Sodky H.; Anders, Andre

    2006-11-08

    Amorphous and partially crystalline WO3 thin films wereprepared by reactive dual magnetron sputtering and successively implantedby erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015ions/cm2. The electrical and optical properties were studied as afunction of the film deposition parameters and the ion fluence. Ionimplantation caused a strong decrease of the resistivity, a moderatedecrease of the index of refraction and a moderate increase of theextinction coefficient in the visible and near infrared, while theoptical band gap remained almost unchanged. These effects could belargely ascribed to ion-induced oxygen deficiency. When annealed in air,the already low resistivities of the implanted samples decreased furtherup to 70oC, whereas oxidation, and hence a strong increase of theresistivity, was observed at higher annealing temperatures.

  8. HRTEM Microstructural Characterization of β-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering.

    PubMed

    Faudoa-Arzate, A; Arteaga-Durán, A; Saenz-Hernández, R J; Botello-Zubiate, M E; Realyvazquez-Guevara, P R; Matutes-Aquino, J A

    2017-02-17

    Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400 °C for 6 h was followed by a second annealing at 350 °C for 1 h. Film characterization was carried out by X-ray diffraction (XRD), high-resolution electron transmission microscopy (HRTEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques. The β-WO3 final phase grew in form of columnar crystals and its growth plane was determined by HRTEM.

  9. A Complementary Type of Electrochromic Device by Radio Frequency Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change their optical properties reversibly in the visible region (400-800 nm) upon charge insertion/extraction reactions according to the applied voltage. A complementary type of EC device composes of two electrochromic layers, which is separated by an ionic conduction layer (electrolyte). In this work, the EC device was fabricated using vanadium oxide (V2O5) and titanium doped tungsten oxide (WO3-TiO2) electrodes. The EC electrodes were deposited as thin film structures by a reactive RF magnetron sputtering system in a medium of gas mixture of argon and oxygen. surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical property and durability of the EC device was investigated by a potentiostat system. Optical measurement was examined under applied voltages of +/- 2.5 V by a computer-controlled system, constantly.

  10. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    NASA Astrophysics Data System (ADS)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  11. Surface properties and biocompatibility of nanostructured TiO2 film deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Majeed, Asif; He, Jie; Jiao, Lingrui; Zhong, Xiaoxia; Sheng, Zhengming

    2015-02-01

    Nanostructured TiO2 films are deposited on a silicon substrate using 150-W power from the RF magnetron sputtering at working pressures of 3 to 5 Pa, with no substrate bias, and at 3 Pa with a substrate bias of -50 V. X-ray diffraction (XRD) analysis reveals that TiO2 films deposited on unbiased as well as biased substrates are all amorphous. Surface properties such as surface roughness and wettability of TiO2 films, grown in a plasma environment, under biased and unbiased substrate conditions are reported according to the said parameters of RF power and the working pressures. Primary rat osteoblasts (MC3T3-E1) cells have been cultured on nanostructured TiO2 films fabricated at different conditions of substrate bias and working pressures. The effects of roughness and hydrophilicity of nanostructured TiO2 films on cell density and cell spreading have been discussed.

  12. Characteristics of DLC containing Ti and Zr films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ma, Guojia; Lin, Guoqiang; Sun, Gang; Zhang, Huafang; Wu, Hongchen

    The purpose of this paper is to investigate metal doping effects on micro-structural, mechanical and corrosive behavior of the DLC film. Ti and Zr doped DLC films were prepared on NiTi alloys by reactive magnetron sputtering combined with plasma source ion implantation (PSII) technology used to improve the coherent strength, respectively. The mechanical properties of the doped DLC films were investigated by means of nano-indentation technique, microscratch and frictional wear testing. The potentiodynamic polarization measurement was employed to value the corrosion resistance of DLC with Ti and Zr films in Hank's simulated body fluid. It was found that Ti-doped DLC films embraced higher nano-hardness, somewhat lower coefficient of friction and better corrosion resistance than Zr-doped DLC films.

  13. Green photoluminescence from Zn3N2:Tb films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Z.-X.; Pan, X.-J.; Liu, L.-X.; Ma, Z.-W.; Zhao, H.-T.; Jia, L.; Xie, E.-Q.

    2009-01-01

    Terbium (Tb)-doped Zn3N2 thin films were prepared on glass and Si substrates by direct current magnetron sputtering in a mixture of pure argon and nitrogen gases. Glancing incidence x-ray diffraction patterns indicated that Zn3N2:Tb thin films were of cubic structure. Raman spectra showed only two Raman-active phonon modes located at 258 and 565 cm-1. The indirect optical band gap of Zn3N2:Tb was determined as 2.4 eV. The sharp characteristic emission lines corresponding to Tb3+ intra-4f shell transitions were resolved in the photoluminescence spectra at room temperature. Those results suggest that Tb-doped Zn3N2 may be a suitable material for visible optoelectronic devices.

  14. Bioactive glass thin films deposited by magnetron sputtering technique: The role of working pressure

    NASA Astrophysics Data System (ADS)

    Stan, G. E.; Marcov, D. A.; Pasuk, I.; Miculescu, F.; Pina, S.; Tulyaganov, D. U.; Ferreira, J. M. F.

    2010-09-01

    Bioglass coatings were prepared by radio frequency magnetron sputtering deposition at low temperature (150 °C) onto silicon substrates. The influence of argon pressure values used during deposition (0.2 Pa, 0.3 Pa and 0.4 Pa) on the short-range structure and biomineralization potential of the bioglass coatings was studied. The biomineralization capability was evaluated after 30 days of immersion in simulated body fluid. SEM-EDS, XRD and FTIR measurements were performed. The tests clearly showed strong biomineralization features for the bioglass films. The thickness of the chemically grown hydroxyapatite layers was more than twice greater for the BG films deposited at the highest working pressure, in comparison to those grown on the films obtained at lower working pressures. The paper attempts to explain this experimental fact based on structural and compositional considerations.

  15. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    SciTech Connect

    Verma, M.; Gupta, V. K.; Gautam, Y. K.; Dave, V.; Chandra, R.

    2014-01-28

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al{sub 2}O{sub 3}, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  16. High-frequency magnetic properties of Zn ferrite films deposited by magnetron sputtering

    SciTech Connect

    Guo Dangwei; Zhu Jingyi; Yang Yuancai; Fan Xiaolong; Chai Guozhi; Sui Wenbo; Zhang Zhengmei; Xue Desheng

    2010-02-15

    The effect of thermal annealing on structural and magnetic properties has been investigated for Zn ferrite films deposited on Si (111) substrates using radio frequency magnetron sputtering. The saturation magnetization at room temperature was enhanced upto 303 emu/cm{sup 3} by annealing at relatively low temperature of 200 deg. C and decreased at higher temperatures. The complex permeability {mu}={mu}{sup '}-i{mu}{sup ''} values of the ferrite films as-deposited and annealed at 200 and 400 deg. C were measured at frequency upto 5 GHz. These films exhibited better high-frequency properties, especially, the film annealed at 200 deg. C had a large {mu}{sup '} of 19.5 and high resonance frequency f{sub r} of 1.61 GHz. And the reason was investigated preliminarily based on the bianisotropy model.

  17. Deposition of a conductive near-infrared cutoff filter by radio-frequency magnetron sputtering.

    PubMed

    Lee, Jang-Hoon; Lee, Seung-Hyu; Yoo, Kwang-Lim; Kim, Nam-Young; Hwangbo, Chang Kwon

    2002-06-01

    We have designed a conductive near-infrared (NIR) cutoff filter for display application, i.e., a modified low-emissivity filter based on the three periods of the basic design of [TiO2[Ti]Ag] TiO2] upon a glass substrate and investigated the optical, structural, chemical, and electrical properties of the conductive NIR cutoff filter prepared by a radio frequency magnetron sputtering system. The results show that the average transmittance is 61.1% in the visible, that the transmittance in the NIR is less than 6.6%, and that the sheet resistance and emissivity are 0.9 ohms/square (where square stands for a square film) and 0.012, respectively, suggesting that the conductive NIR cutoff filter can be employed as a shield against the hazard of electromagnetic waves as well as to cut off the NIR.

  18. Structural Control in Porous/Compact Multilayer Systems Grown by Magnetron Sputtering.

    PubMed

    Garcia-Valenzuela, Aurelio; Lopez-Santos, Carmen; Alvarez, Rafael; Rico, Victor J; Cotrino, Jose; Gonzalez-Elipe, Agustin Rodriguez; Palmero, Alberto

    2017-09-15

    In this work we analyze a phenomenon that takes place when growing magnetron sputtered porous/compact multilayer systems by alternating the oblique angle and the classical configuration geometries. We show that the compact layers develop numerous fissures rooted in the porous structures of the film below, in a phenomenon that amplifies when increasing the number of stacked layers. We demonstrate that these fissures emerge during growth due to the high roughness of the porous layers and the coarsening of a discontinuous interfacial region. To minimize this phenomenon, we have grown thin interlayers between porous and compact films under the impingement of energetic plasma ions, responsible for smoothing out the interfaces and inhibiting the formation of structural fissures. This method has been tested in practical situations for compact TiO2/porous SiO2 multilayer systems, although it can be extrapolated to other materials and conditions. © 2017 IOP Publishing Ltd.

  19. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    SciTech Connect

    Fan, J. C.; Zhu, C. Y.; Fung, S.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Skorupa, W.; Anwand, W.

    2009-10-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above approx400 deg. C, the films changed from n type to p type. Hole concentration and mobility of approx6x10{sup 17} cm{sup -3} and approx6 cm{sup 2} V{sup -1} s{sup -1} were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As{sub Zn}-2V{sub Zn} shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  20. Studies on optoelectronic properties of DC reactive magnetron sputtered chromium doped CdO thin films

    SciTech Connect

    Hymavathi, B. Rao, T. Subba; Kumar, B. Rajesh

    2014-10-15

    Cr doped CdO thin films were deposited on glass substrates by DC reactive magnetron sputtering method and subsequently annealed from 200 °C to 500 °C. X-ray diffraction analysis showed that the films exhibit (1 1 1) preferred orientation. The optical transmittance of the films increases from 64% to 88% with increasing annealing temperature. The optical band gap values were found to be decreased from 2.77 to 2.65 eV with the increase of annealing temperature. The decrease in optical band gap energy with increasing annealing temperature can be attributed to improvement in the crystallinity of the films and may also be due to quantum confinement effect. A minimum resistivity of 2.23 × 10{sup −4} Ω.cm and sheet resistance of 6.3 Ω/sq is obtained for Cr doped CdO film annealed at 500 °C.

  1. One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering

    SciTech Connect

    Liu, Ziheng Hao, Xiaojing; Ho-Baillie, Anita; Green, Martin A.

    2014-02-03

    In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50 °C to 150 °C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.

  2. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Verma, M.; Gupta, V. K.; Gautam, Y. K.; Dave, V.; Chandra, R.

    2014-01-01

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al2O3, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  3. Time resolved tunable diode laser absoption spectroscopy of dual High Power Impulse Magnetron Sputtering discharges

    NASA Astrophysics Data System (ADS)

    Do, Hoang Tung; Stranak, Vitezslav; Hippler, Rainer

    2014-08-01

    Time-resolved measurements have been performed during dual High Power Impulse Magnetron Sputtering (dual-HiPIMS) with two cathodes in a closed magnetic field configuration. The dual-HiPIMS system, operated at a repetition frequency f = 100 Hz and duty cycle of 1 %, was equipped with two different metallic targets (Ti, Cu). The effect of a delay between subsequent pulses on argon excited atom density and temperature was investigated by means of tunable diode laser absorption spectroscopy. It is shown that the peak densities of pulses vary strongly with the delay. We observed an enhancement of metastable density due to pre-ionization effect but more effective than that is the contribution of metal atoms which have smaller ionization energy compare to that of buffer gas atom. Associate with the enhancement of density, the temporal variation of metastable atom temperature in the Cu pulse also transforms from those of low current pulse into the high current one.

  4. Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering

    SciTech Connect

    Belkerk, B. E.; Soussou, A.; Carette, M.; Djouadi, M. A.; Scudeller, Y.

    2012-10-08

    This Letter reports the thermal conductivity of aluminium nitride (AlN) thin-films deposited by reactive DC magnetron sputtering on single-crystal silicon substrates (100) with varying plasma and magnetic conditions achieving different crystalline qualities. The thermal conductivity of the films was measured at room temperature with the transient hot-strip technique for film thicknesses ranging from 100 nm to 4000 nm. The thermal conductivity was found to increase with the thickness depending on the synthesis conditions and film microstructure. The conductivity in the bulk region of the films, so-called intrinsic conductivity, and the boundary resistance were in the range [120-210] W m{sup -1} K{sup -1} and [2-30 Multiplication-Sign 10{sup -9}] K m{sup 2} W{sup -1}, respectively, in good agreement with microstructures analysed by x-ray diffraction, high-resolution-scanning-electron-microscopy, and transmission-electron-microscopy.

  5. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    SciTech Connect

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-13

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  6. Particle visualization in high-power impulse magnetron sputtering. II. Absolute density dynamics

    SciTech Connect

    Britun, Nikolay Palmucci, Maria; Konstantinidis, Stephanos; Snyders, Rony

    2015-04-28

    Time-resolved characterization of an Ar-Ti high-power impulse magnetron sputtering discharge has been performed. The present, second, paper of the study is related to the discharge characterization in terms of the absolute density of species using resonant absorption spectroscopy. The results on the time-resolved density evolution of the neutral and singly-ionized Ti ground state atoms as well as the metastable Ti and Ar atoms during the discharge on- and off-time are presented. Among the others, the questions related to the inversion of population of the Ti energy sublevels, as well as to re-normalization of the two-dimensional density maps in terms of the absolute density of species, are stressed.

  7. The physical properties of AZO films deposited by RF magnetron sputtering in hydrogen-diluted argon

    NASA Astrophysics Data System (ADS)

    Kim, Jwayeon; Han, Jungsu; Jin, Hyunjoon; Kim, Youhyuk; Park, Kyeongsoon

    2014-08-01

    The properties of AZO (98-wt% ZnO, 2-wt% Al2O3) films produced in pure Ar and Ar (98%) + H2 (2%) (H2-diluted Ar) by radio-frequency (RF) magnetron sputtering were investigated as functions of the substrate temperatures. H2-diluted Ar improved the electrical properties of the AZO films fabricated at low substrate temperatures, but this benefit gradually diminished with increasing substrate temperature. This phenomenon was explained by O-H stretching in the Zn-O bond at low temperatures and by the formation of oxygen vacancies at high temperatures. The average optical transmission was over ~85%, and the orientation of the AZO films deposited both in pure Ar and in H2-diluted Ar was in the [002] direction.

  8. Light-induced changes in photocarrier transport in magnetron sputtered a-Si:H

    NASA Astrophysics Data System (ADS)

    Doyle, J. R.; Maley, N.; Abelson, J. R.

    1991-08-01

    The effect of light soaking on the steady-state reverse bias collection efficiency has been studied for hydrogenated amorphous silicon films produced by reactive magnetron sputtering. Films with optical gaps of 1.63 and 1.74 eV both showed considerable degradation in the collection efficiency, correlating with increases in sub-gap absorption and decreases in the spectral response quantum efficiency. The collection efficiency data have been fitted with the two-field Hecht expression, and effective mobility-life-time products have been extracted. These results indicate that straightforward measurements on Schottky barriers can be utilized as sensitive monitors of light induced degradation in a-Si:H

  9. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  10. Structural and mechanical properties of magnetron-sputtered Al-Au thin films

    NASA Astrophysics Data System (ADS)

    Azadmanjiri, Jalal; Wang, James; Berndt, Christopher C.; Wen, Cuie; Srivastava, Vijay K.; Kapoor, Ajay

    2017-01-01

    There is global interest in improving the mechanical properties of light metals such as aluminum (Al)-based alloys by tailoring their microstructures at the nanometer scale. On the other hand, gold (Au) has been widely applied as a wire bonding material due to its prominent ductility and conductivity. In this study, the microstructure, hardness and elastic modulus of DC magnetron-sputtered aluminum/gold (Al/Au) composite thin films of different thicknesses were investigated. It is shown that in addition to the formation of AlAu2 phase, additional Al and Au nanosegregated phases also formed. The Al/Au thin films of 600 and 800 nm thickness exhibit the maximum hardness ( 5.40 GPa) and elastic modulus ( 97.00 GPa). However, film thicknesses of 1000 and 1200 nm demonstrate a reduction in hardness and elastic modulus due to different growth mechanisms and the formation of voids that can be attributed to the Kirkendall phenomenon.

  11. Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Bodeux, Romain; Michau, Dominique; Josse, Michaël; Maglione, Mario

    2014-12-01

    Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO2/SiO2/Si substrates from Ba2LnFeNb4O15 ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk, i.e., ɛ ˜150 and σ ˜10-6 Ω-1 cm-1 at 1 MHz and room temperature. The films exhibit two dielectric anomalies which are attributed to Maxwell Wagner polarization mechanism and relaxor behaviour. Both anomalies are sensitive to post-annealing under oxygen atmosphere and their activation energies are similar Ea ˜0.30 eV. They are explained in terms of electrically heterogeneous contributions in the films.

  12. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.

    2009-10-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ˜400 °C, the films changed from n type to p type. Hole concentration and mobility of ˜6×1017 cm-3 and ˜6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  13. Morphology of epitaxial TiN(001) grown by magnetron sputtering

    SciTech Connect

    Karr, B.W.; Petrov, I.; Cahill, D.G.; Greene, J.E.

    1997-03-01

    The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by {ital in situ} scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650{lt}T{lt}750{degree}C using reactive magnetron sputter deposition in pure N{sub 2}. The surface morphology is dominated by growth mounds with an aspect ratio of {approx_equal}0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, t{sup {alpha}}, with {alpha}=0.25{plus_minus}0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature. {copyright} {ital 1997 American Institute of Physics.}

  14. Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application

    NASA Astrophysics Data System (ADS)

    Firek, Piotr; Wysokiński, Piotr

    2016-12-01

    Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O2/N2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (Ra=0.2÷1,0 nm). Thickness of HfOXNY films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage UFB, dielectric constant Ki, interface state trap density Dit and effective charge Qeff. Subsequently, deposited HfOxNy layers were annealed in PDA process (40 min 400 °C 100% N2) after which the electrical characterization was performed again.

  15. Annealing induced morphological modifications in PTFE films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tripathi, S.; De, Rajnarayan; Rao, K. Divakar; Haque, S. Maidul; Misal, J. S.; Prathap, C.; Das, S. C.; Ganesan, V.; Sahoo, N. K.

    2017-05-01

    As grown RF magnetron sputtered polytetrafluoroethylene (PTFE) thin films were subjected to vacuum annealing at optimized elevated temperature of 200° C for varying time duration and corresponding surface morphological changes were recorded. The columnar structures appearing after an annealing duration of 2 hours are interesting for fabrication of rough PTFE surfaces towards possible applications in hydrophobicity along with high transmission. Supported by transmission data, the AFM images show a transformation of smooth PTFE surface with less than 2 nm rms roughness to a very rough surface. The results are interpreted in terms of thermal energy induced modifications only at the surface without any change in the original bonding structure on the surface and inside the sample. Preliminary studies indicate that the optimization of roughness and transmission together on such surfaces may lead to high water contact angles.

  16. Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

    NASA Technical Reports Server (NTRS)

    Kusano, E.; Theil, J. A.; Thornton, John A.

    1988-01-01

    It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

  17. Direct current magnetron sputtering deposition of InN thin films

    NASA Astrophysics Data System (ADS)

    Cai, Xing-Min; Hao, Yan-Qing; Zhang, Dong-Ping; Fan, Ping

    2009-10-01

    In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

  18. Composition of nanocomposites based on thin layers of tin on porous silicon formed by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lenshin, A. S.; Kashkarov, V. M.; Domashevskaya, E. P.; Seredin, P. V.; Ryabtsev, S. V.; Bel'tyukov, A. N.; Gil'mutdinov, F. Z.

    2017-01-01

    Using scanning electron microscopy and X-ray photoelectron spectroscopy the features of morphology and peculiarities of the surface composition of nanocomposites made of thin tin layers by magnetron sputtering formed on porous silicon with pores size of 50-150 nm. Porous silicon was obtained on n-type conductivity crystalline silicon substrate. The obtained nanocomposites were found differ between themselves by the ratio of the main phases: tin dioxide, sub-oxide and metal tin in a dependence on the thickness of the deposited tin layer. Fraction of the oxidized tin in the phase composition of composites was reduced from the surface to the bulk of the sample. Moreover, it was determined that the deposition of tin nanolayers did not result in a considerable change of the phase composition of porous silicon substrate.

  19. Growth and properties of YBaCu-oxide superconducting thin films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Xi, X. X.; Li, H. C.; Geerk, J.; Linker, G.; Meyer, O.; Obst, B.; Ratzel, F.; Smithey, R.; Weschenfelder, F.

    1988-06-01

    Thin superconducting YBaCuO films have been reproducibly deposited by dc-magnetron sputtering from sintered targets in an oxygen-argon atmosphere. The growth has been studied on different single crystalline substrates like ZrO, Al2O3 and SrTiO3 as a function of Ts. Best zero resistance values on the different substrates were 87 K and 89 K, respectively with transition widths <2 K achieved at optimized temperatures (760

  20. YBCO and LSMO nano-films and sandwiches prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nurgaliev, T.; Mateev, E.; Blagoev, B.; Miteva, S.; Neshkov, L.; Strbik, V.; Uspenskaya, L. S.; Benacka, S.; Chromik, S.; Nedkov, I.

    2010-06-01

    DC and RF magnetron sputtering techniques were used for growing nano-films (t<100 nm) of high temperature superconducting (HTS) YBa2Cu3O7 (YBCO) and ferromagnetic (FM) manganite La0.7Sr0.3Mn03 (LSMO) materials on LaAlO3 (LAO) and Al2O3 (ALO) substrates as well as for preparing of single-, double- and three-layer structures in different areas of the same substrates. The procedure allowed growing of structures on LAO substrates where the critical temperature of YBCO thin film components was more than 84 K. The LSMO films grown ALO substrates were ferromagnetic while the YBCO films grown on LSMO/ALO did not demonstrate superconductivity.

  1. Preparation of transparent Cu2Y2O5 thin films by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chiu, Te-Wei; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

    2015-11-01

    Cu2Y2O5 thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu2Y2O5 was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu2Y2O5 surface had a superior antibacterial performance even at a dark environment. Therefore, Cu2Y2O5 is a promising novel transparent antibacterial hard coating material.

  2. Structural and nanomechanical characterization of niobium films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Li, X.; Cao, W. H.; Tao, X. F.; Ren, L. L.; Zhou, L. Q.; Xu, G. F.

    2016-05-01

    Nb thin films were deposited onto Si wafers by direct current (DC) magnetron sputtering at different deposition pressures. The microstructure and nanomechanical properties of Nb films were investigated by scanning electron microscope, X-ray diffractometer, transmission electron microscope, atomic force microscope and nanoindenter. The results revealed that the grain size, thickness, surface roughness, the reduced elastic modulus ( Er) and hardness ( H) values of Nb thin films increased at the pressure range of 0.61-0.68 Pa. Meanwhile, the porosity of Nb films decreased with the increase in deposition pressure. The lattice deformation of Nb thin films changed from negative to positive with the increase in deposition pressure. It is concluded that deposition pressure influences the microstructure and nanomechanical properties of Nb films.

  3. Research of niobium thin films with a predetermined thickness produced by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Polonyankin, D. A.; Blesman, A. I.; Postnikov, D. V.; Logacheva, A. I.; Logachev, I. A.; Teplouhov, A. A.; Fedorov, A. A.

    2017-01-01

    Niobium and niobium thin films are widely used in various fields of modern science and technology: in the electronics industry, in a nuclear medical imaging technique, in the information technology, in superconducting cavities technology etc. The grain size of thin niobium films depends on its thickness and the film’s stoichiometry can be varied as a function of thickness. Thus the problem of thickness control has a great practical importance in all fields of niobium films application. The focus of this study was to perform an experimental calibration of STC–2000A deposition controller for niobium target on ADVAVAC VSM–200 setup and to conduct a grain size, roughness and stoichiometry research by scanning electron microscopy, X–ray diffraction and laser interference microscopy of niobium films produced by RF magnetron sputtering with the thickness range from 200 nm to 400 nm and 50 nm step.

  4. The Gibbs Thomson effect in magnetron-sputtered austenitic stainless steel films

    NASA Astrophysics Data System (ADS)

    Cusenza, S.; Borchers, C.; Carpene, E.; Schaaf, P.

    2007-03-01

    Magnetron sputtering of austenitic stainless steel AISI 316, which has a face-centred cubic structure (γ), leads to films exhibiting a body-centred cubic (α) structure or a mixture of α- and γ-phases. The microstructure of the deposited films was studied by Mössbauer spectroscopy, x-ray diffraction and transmission electron microscopy. With increasing deposition temperature a phase transformation from α- to γ-phase was observed in these films. Instantaneous recording of the electromotive force shows that nickel content and deposition temperature are crucial factors for phase stability and phase formation. In room temperature deposited stainless steel films, the phase transformation after vacuum annealing can be described by the Johnson-Mehl-Avrami kinetic model. These phase transformations in stainless steel films during annealing can be explained with the Gibbs-Thomson effect, where the grain boundary energy raises the Gibbs free energy.

  5. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    NASA Astrophysics Data System (ADS)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  6. Surface properties and biocompatibility of nanostructured TiO2 film deposited by RF magnetron sputtering.

    PubMed

    Majeed, Asif; He, Jie; Jiao, Lingrui; Zhong, Xiaoxia; Sheng, Zhengming

    2015-01-01

    Nanostructured TiO2 films are deposited on a silicon substrate using 150-W power from the RF magnetron sputtering at working pressures of 3 to 5 Pa, with no substrate bias, and at 3 Pa with a substrate bias of -50 V. X-ray diffraction (XRD) analysis reveals that TiO2 films deposited on unbiased as well as biased substrates are all amorphous. Surface properties such as surface roughness and wettability of TiO2 films, grown in a plasma environment, under biased and unbiased substrate conditions are reported according to the said parameters of RF power and the working pressures. Primary rat osteoblasts (MC3T3-E1) cells have been cultured on nanostructured TiO2 films fabricated at different conditions of substrate bias and working pressures. The effects of roughness and hydrophilicity of nanostructured TiO2 films on cell density and cell spreading have been discussed.

  7. C/CrC nanocomposite coating deposited by magnetron sputtering at high ion irradiation conditions

    SciTech Connect

    Zhou, Z.; Rainforth, W. M.; Gass, M. H.; Bleloch, A.; Ehiassarian, A. P.; Hovsepian, P. Eh.

    2011-10-01

    CrC with the fcc NaCl (B1) structure is a metastable phase that can be obtained under the non-equilibrium conditions of high ion irradiation. A nano-composite coating consisting of amorphous carbon embedded in a CrC matrix was prepared via the unbalanced magnetron sputtering of graphite and Cr metal targets in Ar gas with a high ionized flux (ion-to-neutral ratio Ji/Jn = 6). The nanoscale amorphous carbon clusters self-assembled into layers alternated by CrC, giving the composite a multilayer structure. The phase, microstructure, and composition of the coating were characterized using x-ray diffraction, transmission electron microscopy, and aberration corrected scanning transmission electron microscopy coupled with electron energy loss spectroscopy. The interpretation of the true coating structure, in particular the carbide type, is discussed.

  8. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  9. Enhancement of bioactivity on medical polymer surface using high power impulse magnetron sputtered titanium dioxide film.

    PubMed

    Yang, Yi-Ju; Tsou, Hsi-Kai; Chen, Ying-Hung; Chung, Chi-Jen; He, Ju-Liang

    2015-12-01

    This study utilizes a novel technique, high power impulse magnetron sputtering (HIPIMS), which provides a higher ionization rate and ion bombardment energy than direct current magnetron sputtering (DCMS), to deposit high osteoblast compatible titanium dioxide (TiO2) coatings with anatase (A-TiO2) and rutile (R-TiO2) phases onto the biomedical polyetheretherketone (PEEK) polymer substrates at low temperature. The adhesions of TiO2 coatings that were fabricated using HIPIMS and DCMS were compared. The in vitro biocompatibility of these coatings was confirmed. The results reveal that HIPIMS can be used to prepare crystallinic columnar A-TiO2 and R-TiO2 coatings on PEEK substrate if the ratio of oxygen to argon is properly controlled. According to a tape adhesion test, the HIPIMS-TiO2 coatings had an adhesion grade of 5B even after they were immersed in simulated body fluid (SBF) environments for 28days. Scratch tests proved that HIPIMS-TiO2 coatings undergo cohesive failure. These results demonstrate that the adhesive force between HIPIMS-TiO2 coating/PEEK is stronger than that between DCMS-TiO2 coating/PEEK. After a long period (28days) of immersion in SBF, a bone-like crystallinic hydroxyapatite layer with a corresponding Ca/P stoichiometry was formed on both HIPIMS-TiO2. The osteoblast compatibility of HIPIMS-TiO2 exceeded that of the bare PEEK substrate. It is also noticeable that the R-TiO2 performed better in vitro than the A-TiO2 due to the formation of many negatively charged hydroxyl groups (-OH(-)) groups on R-TiO2 (110) surface. In summary, the HIPIMS-TiO2 coatings satisfied the requirements for osseointegration, suggesting the possibility of using HIPIMS to modify the PEEK surface with TiO2 for spinal implants.

  10. A Magnetron Sputter Deposition System for the Development of Multilayer X-Ray Optics

    NASA Technical Reports Server (NTRS)

    Broadway, David; Ramsey, Brian; Gubarev, Mikhail

    2014-01-01

    The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.

  11. A Magnetron Sputter Deposition System for the Development of X-Ray Multilayer Optics

    NASA Technical Reports Server (NTRS)

    Broadway, David

    2015-01-01

    The project objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and extreme ultraviolet (EUV) optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance NASA Marshall Space Flight Center's (MSFC's) position as a world leader in the design of innovative x-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures are absolutely necessary in order to advance the field of x-ray astronomy by pushing the limit for observing the universe to ever-increasing photon energies (i.e., up to 200 keV or higher), well beyond Chandra's (approx.10 keV) and NuStar's (approx.75 keV) capability. The addition of multilayer technology would significantly enhance the x-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication, and design of innovative x-ray instrumentation, which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments. To this aim, a magnetron vacuum sputter deposition system for the deposition of novel multilayer thin film x-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and x-ray optics for a broad range of applications including medical imaging.

  12. Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

    SciTech Connect

    Voronov, D. L.; Gawlitza, Peter; Cambie, Rossana; Dhuey, Scott; Gullikson, Eric M.; Warwick, Tony; Braun, Stefan; Yashchuk, Valeriy V.; Padmore, Howard A.

    2012-05-07

    Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. In this study, to minimize the shadowing effects, we used an ion-beamsputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr+ ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Lastly, details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

  13. Metal-AlN cermet solar selective coatings deposited by direct current magnetron sputtering technology

    NASA Astrophysics Data System (ADS)

    Zhang, Qi-Chu

    1998-02-01

    A series of metal-aluminium nitride (M-AlN) cermet materials for solar selective coatings was deposited by a novel direct current (d.c.) magnetron sputtering technology. Aluminium nitride was used as the ceramic component in the cermets, and stainless steel (SS), nickel-based alloy 0022-3727/31/4/003/img1 (NiCr), molybdenum-based alloy 0022-3727/31/4/003/img2 (TZM) and tungsten were used as the metallic components. The aluminium nitride ceramic and metallic components of the cermets were deposited by simultaneously running both an aluminium target and another metallic target in a gas mixture of argon and nitrogen. The ceramic component was deposited by d.c. reactive sputtering and the metallic component by d.c. non-reactive sputtering. The total sputtering gas pressure was 0.8-1.0 Pa and the partial pressure of reactive nitrogen gas was set at 0.020-0.025 Pa which is sufficiently high to ensure that a nearly pure AlN ceramic sublayer was deposited by d.c. reactive sputtering. Because of the excellent nitriding resistance of stainless steel and the other alloys and metal, a nearly pure metallic sublayer was deposited by d.c. sputtering at this low nitrogen partial pressure. A multilayered system, consisting of alternating metallic and AlN ceramic sublayers, was deposited by substrate rotation. This multisublayer system can be considered as a macrohomogeneous cermet layer with metal volume fraction determined by controlling the thicknesses of metallic and ceramic sublayers. Following this procedure, M-AlN cermet solar selective coatings with a double cermet layer structure were deposited. The films of these selective surfaces have the following structure: a low metal volume fraction cermet layer is placed on a high metal volume fraction cermet layer which in turn is placed on an aluminium metal infrared reflection layer. The top surface layer consists of an aluminium nitride antireflection layer. A solar absorptance of 0.92-0.96 and a normal emittance of 0.03-0.05 at

  14. Species transport on the target during high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Layes, V.; Monje, S.; Corbella, C.; Trieschmann, J.; de los Arcos, T.; von Keudell, A.

    2017-02-01

    High Power Impulse Magnetron Sputtering (HiPIMS) is a prominent technique to deposit superior materials due to the very energetic growth flux. The origin of this energetic growth flux is believed to be an electric potential structure inside localized ionization zones, the so-called spokes, in the HiPIMS plasma, which rotate in the E × B direction along the racetrack. The measurement of this electric potential or of the electric fields surrounding this ionization zone is extremely challenging due to the very high local power density that obstructs any traditional probe diagnostics. Here, we use a marker technique on the magnetron target to analyze the lateral transport of a target material on a HiPIMS target. We show that the target material is predominantly transported in the E × B direction irrespective of the presence of spokes. However, only when spokes are present, we observe also an enhanced transport in the opposite E × B direction. This is explained by the large electric field at the trailing edges of spokes.

  15. Return of target material ions leads to a reduced hysteresis in reactive high power impulse magnetron sputtering: Model

    NASA Astrophysics Data System (ADS)

    Kadlec, Stanislav; Čapek, Jiří

    2017-05-01

    A tendency to disappearing hysteresis in reactive High Power Impulse Magnetron Sputtering (HiPIMS) has been reported previously without full physical explanation. An analytical model of reactive pulsed sputtering including HiPIMS is presented. The model combines a Berg-type model of reactive sputtering with the global HiPIMS model of Christie-Vlček. Both time and area averaging is used to describe the macroscopic steady state, especially the reactive gas balance in the reactor. The most important effect in the presented model is covering of reacted parts of target by the returning ionized metal, effectively lowering the target coverage by reaction product at a given partial pressure. The return probability of ionized sputtered metal has been selected as a parameter to quantify the degree of HiPIMS effects. The model explains the reasons for reduced hysteresis in HiPIMS. The critical pumping speed was up to a factor of 7 lower in reactive HiPIMS compared to the mid-frequency magnetron sputtering. The model predicts reduced hysteresis in HiPIMS due to less negative slope of metal flux to substrates and of reactive gas sorption as functions of reactive gas partial pressure. Higher deposition rate of reactive HiPIMS compared to standard reactive sputtering is predicted for some parameter combinations. Comparison of the model with experiment exhibits good qualitative and quantitative agreement for three material combinations, namely, Ti-O2, Al-O2, and Ti-N2.

  16. Magnetron sputtering of Fe-oxides on the top of HTS YBCO films

    NASA Astrophysics Data System (ADS)

    Nurgaliev, T.; Blagoev, B.; Buchkov, K.; Mateev, E.; Gajda, G.; Nedkov, I.; Kovacheva, D.; Slavov, L.; Starbova, I.; Starbov, N.; Nankovski, M.

    2017-05-01

    The possibilities for preparation of bilayers containing magnetic Fe-oxide (Fe-O) and high temperature superconducting (HTS) YBa2Cu3O7-x (YBCO) thin films were investigated. For this purpose, Fe-O films were deposited using reactive magnetron sputtering at comparatively low temperatures T≤250 °C onto dielectric (for example, LaAlO3 (LAO)) substrates, covered with a HTS YBCO film. The sputtering of the Fe-O layer at such conditions did not lead to a crucial damage of the critical temperature TC of the YBCO film, but could affect the width of the superconducting transition. A decrease of the critical temperature of the (Fe-O)/YBCO/LAO bilayer kept at ambient conditions was observed, possibly due to the negative effects of the water vapour on the sample characteristics. The double peak structure of the imaginary component of the response signal to the AC harmonic magnetic field, observed in such a (Fe-O)/YBCO/LAO sample, was ascribed from two possible views: as a consequence of morphology determined inter- and intra-granular contributions and/or as transitions from dominant irreversible processes as Bean-Livingston barrier to vortex state chains formation.

  17. Properties of a-C:H:Si thin films deposited by middle-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jiang, Jinlong; Wang, Yubao; Du, Jinfang; Yang, Hua; Hao, Junying

    2016-08-01

    The silicon doped hydrogenated amorphous carbon (a-C:H:Si) films were prepared on silicon substrates by middle-frequency magnetron sputtering silicon target in an argon and methane gas mixture atmosphere. The deposition rate, chemical composition, structure, surface properties, stress, hardness and tribological properties in the ambient air of the films were systemically investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), atomic force microscopy (AFM), nanoindentation and tribological tester. The results show that doped silicon content in the films is controlled in the wide range from 39.7 at.% to 0.2 at.% by various methane gas flow rate, and methane flow rate affects not only the silicon content but also its chemical bonding structure in the films due to the transformation of sputtering modes. Meanwhile, the sp3 carbon component in the films linearly increases with increasing of methane flow rate. The film deposited at moderate methane flow rate of 40-60 sccm exhibits the very smooth surface (RMS roughness 0.4 nm), low stress (0.42 GPa), high hardness (21.1 GPa), as well as low friction coefficient (0.038) and wear rate (1.6 × 10-7 mm3/Nm). The superior tribological performance of the films could be attributed to the formation and integral covering of the transfer materials on the sliding surface and their high hardness.

  18. Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Zhang, Bo; Xu, Yan-Hui; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-12-01

    TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings. Thin film coatings of palladium, which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H2 pumping speed, were deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd films were about 0.42-1.3 nm and 8.5-18.25 nm respectively. It was found that the roughness of TiZrV films is small, about 2-4 nm, but for Pd film it is large, about 17-19 nm. The PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results. Supported by National Natural Science Funds of China (11205155) and Fundamental Research Funds for the Central Universities (WK2310000041)

  19. Properties of All-Solid Lithium-Ion Rechargeable Batteries Deposited by RF Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, R. J.; Ren, Y.; Geng, L. Q.; Chen, T.; Li, L. X.; Yuan, C. R.

    2013-08-01

    Amorphous V2O5, LiPON and Li2Mn2O4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge-discharge characteristic in the voltage range of 0.3-3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.

  20. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-06-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  1. Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

    SciTech Connect

    Xiao, Shaozhu; Shi, Kai; Deng, Shutong; Han, Zhenghe; Feng, Feng Lu, Hongyuan; Qu, Timing; Zhu, Yuping; Huang, Rongxia

    2015-07-15

    In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

  2. Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field.

    PubMed

    Li, Chunwei; Tian, Xiubo

    2016-08-01

    The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

  3. Effects of Various RF Powers on CdTe Thin Film Growth Using RF Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Alibakhshi, Mohammad; Ghorannevis, Zohreh

    2016-09-01

    Cadmium telluride (CdTe) film was deposited using the magnetron sputtering system onto a glass substrate at various deposition times and radio frequency (RF) powers. Ar gas was used to generate plasma to sputter the CdTe atoms from CdTe target. Effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD) analysis showed that the films exhibited polycrystalline nature of CdTe structure with the (111) orientation as the most prominent peak. Optimum condition to grow the CdTe film was obtained and it was found that increasing the deposition time and RF power increases the crystallinity of the films. From the profilometer and XRD data's, the thicknesses and crystal sizes of the CdTe films increased at the higher RF power and the longer deposition time, which results in affecting the band gap as well. From atomic force microscopy (AFM) analysis we found that roughnesses of the films depend on the deposition time and is independent of the RF power.

  4. RF magnetron sputtering of a hydroxyapatite target: A comparison study on polytetrafluorethylene and titanium substrates

    NASA Astrophysics Data System (ADS)

    Surmenev, Roman A.; Surmeneva, Maria A.; Grubova, Irina Yu.; Chernozem, Roman V.; Krause, Bärbel; Baumbach, Tilo; Loza, Kateryna; Epple, Matthias

    2017-08-01

    A pure hydroxyapatite (HA) target was used to prepare the biocompatible coating of HA on the surface of a polytetrafluorethylene (PTFE) substrate, which was placed on the same substrate holder with technically pure titanium (Ti) in the single deposition runs by radio-frequency (RF) magnetron sputtering. The XPS, XRD and FTIR analyses of the obtained surfaces showed that for all substrates, instead of the HA coating deposition, the coating of a mixture of calcium carbonate and calcium fluoride was grown. According to SEM investigations, the surface of PTFE was etched, and the surface topography of uncoated Ti was preserved after the depositions. The FTIR results reveal no phosphate bonds; only calcium tracks were observed in the EDX-spectra on the surface of the coated PTFE substrates. Phosphate oxide (V), which originated from the target, could be removed using a vacuum pump system, or no phosphate-containing bonds could be formed on the substrate surface because of the severe substrate bombardment process, which prevented the HA coating deposition. The observed results may be connected with the surface re-sputtering effect of the growing film by high-energy negatively charged ions (most probably oxygen or fluorine), which are accelerated in the cathode dark sheath.

  5. Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

    SciTech Connect

    Menon, Rashmi; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

    2011-03-15

    Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O{sub 2}) mixture. The as-grown films were found to be stressed over a wide range from -1 x 10{sup 11} to -2 x 10{sup 8} dyne/cm{sup 2} that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

  6. Nanocrystalline silicon quantum dots thin films prepared by magnetron reaction sputtering

    NASA Astrophysics Data System (ADS)

    Zhao, Weiping; Deng, Jinxiang; Yang, Bing; Yu, Zhenrui; Aceves, Mariano

    2009-07-01

    Silicon is a kind of excellent semiconductor material and is one of the core material of microelectronics. But it is not a fine luminescent material. The photoluminescence(PL) will be obtained by excitation only when the size of silicon partials reduced to a certain value. Nanocrystalline silicon films have special structure and many excellent optoelectronic properties and are supposed to be applied in optoelectronic devices and large scale integrated circuits. In this paper, Nanocrystalline silicon films was deposited on silicon substrate by RF magnetron sputtering with pure Si target. And the working gas is the mixture of oxygen and argon .The content of O2 in working gas (O2/ O2 + Ar) and the power of sputtering were changed separately .However, the substrate temperature, working gas pressure and other conditions were definite. After annealing in the stove, we got the Nanocrystalline silicon particles in the thin films. Fourier transform infrared(FTIR) transmittance measurement was carried out to characterized Nanocrystalline silicon films. X-ray photoelectron spectroscopy (XPS) measurement was also performed to estimate the atom ratio of the Nanocrystalline silicon films. Raman scattering measurements was also taken in to characterize the Nanocrystalline silicon films. The formation of Nanocrystalline silicon filmswere depended partly on the parameters of experiment. The annealed silicon films were researched that the size of the Nanocrystalline silicon particles proved to be largely impacted by the annealing temperature in the thin film

  7. Highly transparent conducting CdO thin films by radiofrequency magnetron sputtering for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Cheemadan, Saheer; Rafiudeen, Amiruddin; Santhosh Kumar, Maniyeri Chandroth

    2016-07-01

    Cadmium oxide (CdO) thin films with low electrical resistivity and higher transparency have been deposited by radiofrequency (RF) magnetron sputtering on glass substrates. Sputtering process was carried out at RF power of 40 W and with varying substrate temperatures. The structural, morphological, electrical, and optical properties of the deposited films are investigated. The structural properties reveals that the as-deposited CdO films shows preferential orientation along (111) plane exhibiting face centered cubic structure. The surface morphology shows that all the films possess well defined grain boundaries with high uniformity. CdO samples deposited at substrate temperature of 150°C with RF power of 40 W exhibits above 95% transparency within the visible wavelength with lower electrical resistivity value in the order of 10-5 Ω·cm. The Raman spectroscopy analysis reveals the possible modes present in CdO films and its dependence on substrate temperature. The comparatively high value of the figure of merit for the optimum sample of CdO deposited at 150°C indicates that these films are suitable for optoelectronic device applications.

  8. Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field

    NASA Astrophysics Data System (ADS)

    Li, Chunwei; Tian, Xiubo

    2016-08-01

    The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

  9. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Aji, A. S.; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y.

    2015-04-01

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  10. Initial deposition of calcium phosphate ceramic on polystyrene and polytetrafluoroethylene by rf magnetron sputtering deposition

    NASA Astrophysics Data System (ADS)

    Feddes, B.; Wolke, J. G. C.; Jansen, J. A.; Vredenberg, A. M.

    2003-03-01

    Calcium phosphate (CaP) coatings can be applied to improve the biological performance of polymeric medical implants. A strong interfacial bond between ceramic and polymer is required for clinical applications. Because the chemical structure of an interface plays an important role in the adhesion of a coating, we studied the formation of the interface between CaP and polystyrene (PS) and polytetrafluoroethylene (PTFE). The coating was deposited in a radio frequency (rf) magnetron sputtering deposition system. Prior to the deposition, some samples received an oxygen plasma pretreatment. We found that the two substrates show a strongly different reactivity towards CaP. On PS a phosphorus and oxygen enrichment is present at the interface. This is understood from POx complexes that are able to bind to the PS. The effects of the plasma pretreatment are overruled by the deposition process itself. On PTFE, a calcium enrichment and an absence of phosphorus is found at the interface. The former is the result of CaF2-like material being formed at the interface. The latter may be the result of phosphorus reacting with escaping fluorine to a PF3 molecule, which than escapes from the material as a gas molecule. We found that the final structure of the interface is mostly controlled by the bombardment of energetic particles escaping either from the plasma or from the sputtering target. The work described here can be used to understand and improve the adhesion of CaP coatings deposited on medical substrates.

  11. Carbon film deposition on SnO2/Si(111) using DC unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Aji, A. S.; Darma, Y.

    2013-09-01

    In this paper, carbon deposition on SnO2 layer using DC unbalanced magnetron-sputtering technique at low temperature has been systematically studied. Sputtering process were carried out at pressure of 4.6×10-2 Torr by keeping the substrate temperature at 300 °C. SnO2 were growth on silicon (111) substrate using thermal evaporation and continuing with dry oxidation of Sn at 225 °C. Thermal evaporation for high purity Sn was conducted by maintain the current source as high as 40 ampere. The quality of SnO2 on Si(111) and the characteristic of carbon thin film on SnO2 were analized by mean XRD, FTIR and Raman spectra. XRD analysis shows that SnO2 film is growth uniformly on Si(111). FTIR and Raman spectra confirm the formation of thin film carbon on SnO2. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by Raman and XRD spectra.

  12. Structure-Diffusion Relationship of Magnetron-Sputtered WTi Barriers Used in Indium Interconnections

    NASA Astrophysics Data System (ADS)

    Le Priol, A.; Le Bourhis, E.; Renault, P.-O.; Muller, P.; Sik, H.

    2013-11-01

    Tungsten-titanium (WTi) thin films are known as potential adhesion promoters and diffusion barriers. The barrier efficiency of WTi thin films against indium (In) diffusion was experimentally studied by x-ray diffraction (XRD) measurements during in situ annealing. Specific multilayered samples were designed to estimate the diffusion barrier properties using the Ni/In system. These diffusion samples were made up of a 100-nm-thick WTi layer prepared by magnetron sputtering from an alloyed target (W:Ti ≈ 70:30 at.%), sandwiched between Ni and Au/In layers. WTi film microstructures were observed to depend on the working pressure. Diffusion barrier breakdown was monitored upon annealing by the formation of intermetallic compounds (IMC) (intermixing between Ni and In). Annealing was performed at temperatures of 573 K, 623 K, and 673 K (homologous temperatures T/T_m^In ˜eq 1.34, 1.45, and 1.57, respectively) and under primary vacuum. The diffusion coefficients of In in WTi were determined. The correlation between WTi film microstructure and diffusion barrier efficiency was established. Better diffusion barrier performance was obtained for WTi films with dense microstructure associated with a compressive residual stress state. Hence, tuning the sputtering conditions allows significant improvement of barrier performance against diffusion through a change of the film microstructure.

  13. Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field

    SciTech Connect

    Li, Chunwei E-mail: xiubotian@163.com; Tian, Xiubo E-mail: xiubotian@163.com

    2016-08-15

    The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

  14. Carbon film deposition on SnO{sub 2}/Si(111) using DC unbalanced magnetron sputtering

    SciTech Connect

    Aji, A. S.; Darma, Y.

    2013-09-09

    In this paper, carbon deposition on SnO{sub 2} layer using DC unbalanced magnetron-sputtering technique at low temperature has been systematically studied. Sputtering process were carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature at 300 °C. SnO{sub 2} were growth on silicon (111) substrate using thermal evaporation and continuing with dry oxidation of Sn at 225 °C. Thermal evaporation for high purity Sn was conducted by maintain the current source as high as 40 ampere. The quality of SnO{sub 2} on Si(111) and the characteristic of carbon thin film on SnO{sub 2} were analized by mean XRD, FTIR and Raman spectra. XRD analysis shows that SnO{sub 2} film is growth uniformly on Si(111). FTIR and Raman spectra confirm the formation of thin film carbon on SnO{sub 2}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by Raman and XRD spectra.

  15. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    SciTech Connect

    Aji, A. S. Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y.

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  16. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-01-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  17. Three-Dimensional, Fibrous Lithium Iron Phosphate Structures Deposited by Magnetron Sputtering.

    PubMed

    Bünting, Aiko; Uhlenbruck, Sven; Sebold, Doris; Buchkremer, H P; Vaßen, R

    2015-10-14

    Crystalline, three-dimensional (3D) structured lithium iron phosphate (LiFePO4) thin films with additional carbon are fabricated by a radio frequency (RF) magnetron-sputtering process in a single step. The 3D structured thin films are obtained at deposition temperatures of 600 °C and deposition times longer than 60 min by using a conventional sputtering setup. In contrast to glancing angle deposition (GLAD) techniques, no tilting of the substrate is required. Thin films are characterized by X-ray diffraction (XRD), Raman spectrospcopy, scanning electron microscopy (SEM), cyclic voltammetry (CV), and galvanostatic charging and discharging. The structured LiFePO4+C thin films consist of fibers that grow perpendicular to the substrate surface. The fibers have diameters up to 500 nm and crystallize in the desired olivine structure. The 3D structured thin films have superior electrochemical properties compared with dense two-dimensional (2D) LiFePO4 thin films and are, hence, very promising for application in 3D microbatteries.

  18. Thermal Processes and Emission of Atoms from the Liquid Phase Target Surface of a Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Bleykher, G. A.; Krivobokov, V. P.; Yuryeva, A. V.

    2015-08-01

    Mathematical models of thermal and erosion processes in the thermally insulated target of a magnetron sputtering system are constructed. With their help, the special features of forming the emission flux of atoms from the surface of the target whose material experiences first order phase transformations are obtained. The influence of the power density deposited into the magnetron discharge is investigated, the inhomogeneity of its distribution over the target surface is considered, and the special features of atom emission in pulsed-periodic plasma generation regimes are studied. The efficiency of the models is confirmed by a comparison of the calculated results with experimental measurements.

  19. Magnetic field strength influence on the reactive magnetron sputter deposition of Ta2O5

    NASA Astrophysics Data System (ADS)

    Hollerweger, R.; Holec, D.; Paulitsch, J.; Rachbauer, R.; Polcik, P.; Mayrhofer, P. H.

    2013-08-01

    Reactive magnetron sputtering enables the deposition of various thin films to be used for protective as well as optical and electronic applications. However, progressing target erosion during sputtering results in increased magnetic field strengths at the target surface. Consequently, the glow discharge, the target poisoning, and hence the morphology, crystal structure and stoichiometry of the prepared thin films are influenced. Therefore, these effects were investigated by varying the cathode current Im between 0.50 and 1.00 A, the magnetic field strength B between 45 and 90 mT, and the O2/(Ar + O2) flow rate ratio Γ between 0% and 100%. With increasing oxygen flow ratio a substoichiometric TaOx oxide forms at the metallic Ta target surface which further transfers to a non-conductive tantalum pentoxide Ta2O5, impeding a stable dc glow discharge. These two transition zones (from Ta to TaOx and from TaOx to Ta2O5) shift to higher oxygen flow rates for increasing target currents. In contrast, increasing the magnetic field strength (e.g., due to sputter erosion) mainly shifts the TaOx to Ta2O5 transition to lower oxygen flow rates while marginally influencing the Ta to TaOx transition. To allow for a stable dc glow discharge (and to suppress the formation of non-conductive Ta2O5 at the target) even at Γ = 100% either a high target current (Im ⩾ 1 A) or a low magnetic field strength (B ⩽ 60 mT) is necessary. These conditions are required to prepare stoichiometric and fully crystalline Ta2O5 films.

  20. The effect of plating on magnetron sputtering: Residual stress and scratch behavior of Au/NiCr/Ta multi-layers

    NASA Astrophysics Data System (ADS)

    Tang, Wu; Weng, Xiaolong; Deng, Longjiang; Xu, Kewei

    2006-12-01

    Au/NiCr/Ta multi-layers were deposited on Al2O3 substrate by magnetron sputtering and plating. The effect of plating technique on magnetron sputtering film in residual stress, crystal orientation and scratch resistance behavior was investigated. The all magnetron sputtering and plating films were highly textured with dominant Au-(1 1 1) orientation or a mixture of Au-(1 1 1) and Au-(2 0 0) orientation and the (1 1 1)/(2 0 0) intensity ratio were increased after plating. The residual stress in magnetron sputtering films at different substrate temperature was tensile stress with 155-400 MPa and it decreased approximately to 50 MPa after plating. The scratch resistance could be affected by the film thickness, and it increased approximately linearly with the increase of the thickness of metallic films after plating.

  1. Development of mid-frequency AC reactive magnetron sputtering for fast deposition of Y2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Xiong, Jie; Xia, Yudong; Xue, Yan; Zhang, Fei; Guo, Pei; Zhao, Xiaohui; Tao, Bowan

    2014-02-01

    A reel-to-reel magnetron sputtering system with mid-frequency alternating current (AC) power supply was used to deposit double-sided Y2O3 seed layer on biaxially textured Ni-5 at.%W tape for YBa2Cu3O7-δ coated conductors. A reactive sputtering process was carried out using two opposite symmetrical sputtering guns with metallic yttrium targets and water vapor for oxidizing the sputtered metallic atoms. The voltage control mode of the power supply was used and the influence of the cathode voltage and ArH2 pressure were systematically investigated. Subsequently yttrium-stabilized zirconia (YSZ) barrier and CeO2 cap layers were deposited on the Y2O3 buffered substrates in sequence, indicating high quality and uniform double-sided structure and surface morphology of such the architecture.

  2. Current-voltage-time characteristics of the reactive Ar/N{sub 2} high power impulse magnetron sputtering discharge

    SciTech Connect

    Magnus, F.; Sveinsson, O. B.; Olafsson, S.; Gudmundsson, J. T.

    2011-10-15

    The discharge current and voltage waveforms have been measured in a reactive high power impulse magnetron sputtering (HiPIMS) Ar/N{sub 2} discharge with a Ti target for 400 {mu}s long pulses. We observe that the current waveform in the reactive Ar/N{sub 2} HiPIMS discharge is highly dependent on the pulse repetition frequency, unlike the non-reactive Ar discharge. The current is found to increase significantly as the frequency is lowered. This is attributed to an increase in the secondary electron emission yield during the self-sputtering phase, when the nitride forms on the target at low frequencies. In addition, self-sputtering runaway occurs at lower discharge voltages when nitrogen is added to the discharge. This illustrates the crucial role of self-sputtering in the behavior of the reactive HiPIMS discharge.

  3. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    NASA Astrophysics Data System (ADS)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  4. Return of target material ions leads to a reduced hysteresis in reactive high power impulse magnetron sputtering: Experiment

    NASA Astrophysics Data System (ADS)

    Čapek, Jiří; Kadlec, Stanislav

    2017-05-01

    Titanium and aluminum targets have been reactively sputtered in Ar +O2 or Ar +N2 gas mixtures in order to systematically investigate the effect of reduced hysteresis in reactive high power impulse magnetron sputtering (HiPIMS) as compared to other sputtering techniques utilizing low discharge target power density (e.g., direct current or pulsed direct current mid-frequency magnetron sputtering) operated at the same average discharge power. We found that the negative slope of the flow rate of the reactive gas gettered by the sputtered target material as a function of the reactive gas partial pressure is clearly lower in the case of HiPIMS. This results in a lower critical pumping speed, which implies a reduced hysteresis. We argue that the most important effect explaining the observed behavior is covering of the reacted areas of the target by the returning ionized metal, effectively lowering the target coverage at a given partial pressure. This explanation is supported by a calculation using an analytical model of reactive HiPIMS with time and space averaging (developed by us).

  5. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  6. Surface enhanced Raman scattering (SERS) activity studies of Si, Fe, Ti, Al and Ag films' prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Yulin; Fang, Yan

    2008-03-01

    By magnetron sputtering we can make different kinds of metal or semiconductor films to study SERS-active substrate surface. Changing the conditions of magnetron sputtering can give the films of different surface shapes that we want. In this paper we gained the transitional metal films of Fe and Ti, the general metal films of Ag and Al, and the semiconductor films of Si. Then we use the atomic force microscope (AFM) to get the top view pictures of the films. And we also study the SERS mechanism of different films by dropping p-hydroxybenzoic acid (PHBA) solution on them. By this method we find a kind of nearly unearthly SERS-active substrate.

  7. Morphology control of tungsten nanorods grown by glancing angle RF magnetron sputtering under variable argon pressure and flow rate

    NASA Astrophysics Data System (ADS)

    Khedir, Khedir R.; Kannarpady, Ganesh K.; Ishihara, Hidetaka; Woo, Justin; Ryerson, Charles; Biris, Alexandru S.

    2010-09-01

    Morphologically novel tungsten nanorods (WNRs) with the co-existence of two crystalline phases, α-W (thermodynamically stable) and β-W, were fabricated by glancing angle RF magnetron sputtering technique under various Ar pressures and flow rates. For these nanorods, a significant variation in their morphology and surface roughness was observed. These structures could be useful in a wide range of applications such as field emission, robust superhydrophobic coatings, energy, and medicine.

  8. Influence of plasma parameters on the growth and properties of magnetron sputtered CNx thin films

    NASA Astrophysics Data System (ADS)

    Hellgren, Niklas; Macák, Karol; Broitman, Esteban; Johansson, Mats P.; Hultman, Lars; Sundgren, Jan-Eric

    2000-07-01

    Carbon nitride CNx thin films were grown by unbalanced dc magnetron sputtering from a graphite target in a pure N2 discharge, and with the substrate temperature Ts kept between 100 and 550 °C. A solenoid coil positioned in the vicinity of the substrate was used to support the magnetic field of the magnetron, so that the plasma could be increased near the substrate. By varying the coil current and gas pressure, the energy distribution and fluxes of N2+ ions and C neutrals could be varied independently of each other over a wide range. An array of Langmuir probes in the substrate position was used to monitor the radial ion flux distribution over the 75-mm-diam substrate, while the flux and energy distribution of neutrals was estimated through Monte Carlo simulations. The structure, surface roughness, and mechanical response of the films are found to be strongly dependent on the substrate temperature, and the fluxes and energies of the deposited particles. By controlling the process parameters, the film structure can thus be selected to be amorphous, graphite-like or fullerene-like. When depositing at 3 mTorr N2 pressure, with Ts>200 °C, a transition from a disordered graphite-like to a hard and elastic fullerene-like structure occurred when the ion flux was increased above ˜0.5-1.0 mA/cm2. The nitrogen-to-carbon concentration ratio in the films ranged from ˜0.1 to 0.65, depending on substrate temperature and gas pressure. The nitrogen film concentration did, however, not change when varying the nitrogen ion-to-carbon atom flux ratios from ˜1 to 20.

  9. Antibacterial Cr-Cu-O films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Musil, J.; Blažek, J.; Fajfrlík, K.; Čerstvý, R.; Prokšová, Š.

    2013-07-01

    The paper reports on the effect of Cu content in the Cr-Cu-O film and its structure on its antibacterial activity and mechanical properties. The Cr-Cu-O films were prepared by reactive magnetron sputtering from composed Cr/Cu targets using a dual magnetron. The antibacterial activity of Cr-Cu-O films was tested on the killing of Escheria coli bacteria. Correlations between the structure of the Cr-Cu-O film, the content of Cu in the film and its (i) antibacterial efficiency and (ii) mechanical properties were investigated in detail. It was found that the 100% efficiency of the killing of E. coli bacteria on the surface of the Cr-Cu-O film is achieved if (1) the Cu content in the film is ≥15 at.% and (2) the film is either X-ray amorphous or crystalline with the CuCrO2 delafossite structure. These Cr-Cu-O films need no excitation and very effectively kill E. coli bacteria in the daylight as well as in the dark. The X-ray amorphous Cr-Cu-O films with ~20 at.% Cu exhibit a higher (i) hardness H ≈ 4 GPa, (ii) effective Young's modulus E* ≈ 72 GPa and (iii) elastic recovery We ≈ 37% compared with the crystalline Cr-Cu-O film with the CuCrO2 delafossite structure exhibiting H ≈ 1.2 GPa, E* ≈ 21 GPa and We ≈ 21%. Both films very effectively kill the E. coli bacteria, however, exhibit a low ratio H/E* < 0.1.

  10. Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Ratova, Marina; Kelly, Peter J.; West, Glen T.; Tosheva, Lubomira; Edge, Michele

    2017-01-01

    Titanium dioxide - bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer-Emmett-Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV-vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO2 evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO2 nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these tests confirmed that such enhancement of the photocatalytic properties is due to more efficient photogenerated charge carrier separation, as well as to the contribution of the intrinsic photocatalytic properties of Bi2WO6.

  11. Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ward, Logan

    The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate

  12. The effect of sputtering gas pressure on the structure and optical properties of MgNiO films grown by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Xie, Wuze; Jiao, Shujie; Wang, Dongbo; Gao, Shiyong; Wang, Jinzhong; Yu, Qingjiang; Li, Hongtao

    2017-05-01

    In this study, MgNiO thin films were grown on quartz substrates by radio frequency (RF) magnetron sputtering. The influence of different sputtering pressures on the crystalline and optical properties of MgNiO thin films has been studied. X-ray diffraction measurement indicates that the MgNiO films are cubic structure with (200) preferred orientation. UV-vis transmission spectra show that all the MgNiO thin films show more than 75% transmission at visible region, and the absorption edges of all thin films locate at solar-blind region (220 nm-280 nm). The lattice constant and Mg content of MgNiO samples were calculated using X-ray diffraction and transmission spectra data. The phase separation is observed both in the X-ray diffraction patterns and transmission spectra, and the phase separation is studied in detail based on the crystal growth theory and sputtering process.

  13. Study of optoelectronic devices using epitaxial barium titanate thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Barrios, Pedro Jose

    Barium titanate in crystalline form presents ferroelectricity and a variety of significant effects. Its large piezoelectric, pyroelectric, electrooptic and photoelastic coefficients as well as its high dielectric constant make BaTiO3 (BTO) an excellent choice for transducers, sensors, and optoelectronic devices. Essential to the development of such devices on a microscale basis are to prepare films of high quality, similar to those of bulk crystals, and also to develop a proper fabrication process for low-loss waveguides that allow two-dimensional confinement of light. In this thesis we have studied the deposition of epitaxial BaTiO3 films on MgO single crystal substrates using an RF magnetron sputtering technique. The BaTiO3 films were found to have a single crystal structure with an in-plane epitaxial relationship of BTO (100) ∥MgO (100) as confirmed by X-ray diffraction pole figure measurement. BaTiO3 films' electrical, optical, and structural properties were studied and compared to those of the bulk material. Erbium-doped epitaxial BaTiO3 thin films were also developed using RF magnetron sputtering. The Er-doped BaTiO3 films show clear room temperature photoluminescence at 1.54 μm which corresponds to 4I13/2/to[4I]15/2 transitions of Er3+ ions. This new, added, property may be useful for the design of a new generation of guided optic devices presenting optical gain. We have also developed a novel method for forming channel waveguides in BaTiO3 films. The method exploits the photoelastic effect of BTO induced by thin-film stress. We have carried out numerical analyses on the stress distribution by solving the coupled equations that describe the elastomechanical and piezoelectric effects in the ferroelectric material. The refractive index changes were then calculated taking into account both the photoelastic and electrooptic effect of BaTiO3. The simulation result shows a good agreement with the measurement result. The waveguide structure developed in this

  14. The Characterisation and Performance of Magnetron Sputter Coatings on Minting Dies

    NASA Astrophysics Data System (ADS)

    McLean, David Alexander

    Enhancing the performance of various tools and mechanical parts through the use of thin films has been given much attention recently. Thin films have many different uses including: reducing friction, protecting from corrosion and increasing hardness and wear resistance. The Royal Canadian Mint has adopted the magnetron sputter ion plating technique to apply a new Cr-Ti-N based multi-component hard coating and thereby replace their Cr-plating process. Apart from showing improvements to the performance of their minting dies, this change is also more environmentally friendly. The purpose of this thesis is to further characterise this new coating which has shown superior performance. The structure of coatings applied using the magnetron sputter ion plating technique was reviewed along with the hardness and performance analysis of thin-film coatings. Hardness performance of the film on minting dies, including hardness testing and thin-film hardness models, are reviewed. The die performance is discussed in terms of surface wear encountered during the minting process. Two test dies made from air-hardening tool steel are coated and analysed for their hardness performance. Three numismatic coin dies are also analysed at different stages of their lifetime to compare the surface wear at those stages and evaluate the performance of the coating. Both nano- and micro-indentation hardness testing was used to obtain hardness data on the two test dies. The Korsunsky thin-film hardness model was selected to best represent both sets of hardness data. The thin-film hardness model parameters and film hardness were simultaneously calibrated using both nano- and micro-indentation test data. The film hardness was determined to be about 2672 HV. The film hardness was then successfully predicted using only the micro-indentation data and the method was demonstrated on two additional dies with the same composition. The hardness performance of the die was linked to the adhesion of the film. In

  15. An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

    NASA Astrophysics Data System (ADS)

    Singh, Harpal

    This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon

  16. Titania, silicon dioxide, and tantalum pentoxide waveguides and optical resonant filters prepared with radio-frequency magnetron sputtering and annealing.

    PubMed

    Rabady, Rabi; Avrutsky, Ivan

    2005-01-20

    Mixing dielectric materials in solid-thin-film deposition allows the engineering of thin films' optical constants to meet specific thin-film-device requirements, which can be significantly useful for optoelectronics devices and photonics technologies in general. In principle, by use of radio-frequency (rf) magnetron sputtering, it would be possible to mix any two, or more, materials at different molar ratios as long as the mixed materials are not chemically reactive in the mixture. This freedom in material mixing by use of magnetron sputtering has an advantage by providing a wide range of the material optical constants, which eventually enables the photonic-device designer to have the flexibility to achieve optimal device performance. We deposited three combinations from three different oxides by using rf magnetron sputtering and later investigated them for their optical constants. Each two-oxide mixture was done at different molar ratio levels. Moreover, postdeposition annealing was investigated and was shown to reduce the optical losses and to stabilize the film composition against environmental effects such as aging and humidity exposure. These investigations were supported by the fabricated planar waveguides and optical resonant filters.

  17. Evaluation of femtosecond laser damage to gold pulse compression gratings fabricated by magnetron sputtering and e-beam evaporation.

    PubMed

    Wang, Leilei; Kong, Fanyu; Xia, Zhilin; Jin, Yunxia; Huang, Haopeng; Li, Linxin; Chen, Junming; Cui, Yun; Shao, Jianda

    2017-04-10

    In this study, two kinds of Au-coated gratings (ACGs) with a period of 1740 lines/mm were fabricated and evaluated. For these ACG samples, magnetron sputtering and e-beam evaporation were used as the gold deposition process, and the samples had a bandwidth of at least 170 nm, with the -1st-order diffraction efficiency exceeding 90% around the center wavelength of 800 nm. The one-on-one damage threshold of ACGs fabricated by magnetron sputtering and e-beam evaporation measured at a pulse width of 60 fs was 0.59  J/cm2 and 0.43  J/cm2 in the case of the beam normal fluence, respectively. The typical damage morphology of the former type of samples was melting of the gold film, whereas those of the latter type were blisters and peeling off of the gold film. In theory, the electromagnetic field, temperature field, and thermal stress field distribution in the ACGs were calculated using the finite element method. We demonstrated that the adhesion between the gold film and the photoresist played an important role in determining the damage behavior. Thus, the laser resistance of ACG can be improved by enhancing the adhesion between the gold film and the photoresist, and magnetron sputtering was an alternative method to obtain ACGs with much better adhesion.

  18. STEM-EELS analysis reveals stable high-density He in nanopores of amorphous silicon coatings deposited by magnetron sputtering.

    PubMed

    Schierholz, Roland; Lacroix, Bertrand; Godinho, Vanda; Caballero-Hernández, Jaime; Duchamp, Martial; Fernández, Asunción

    2015-02-20

    A broad interest has been showed recently on the study of nanostructuring of thin films and surfaces obtained by low-energy He plasma treatments and He incorporation via magnetron sputtering. In this paper spatially resolved electron energy-loss spectroscopy in a scanning transmission electron microscope is used to locate and characterize the He state in nanoporous amorphous silicon coatings deposited by magnetron sputtering. A dedicated MATLAB program was developed to quantify the helium density inside individual pores based on the energy position shift or peak intensity of the He K-edge. A good agreement was observed between the high density (∼35-60 at nm(-3)) and pressure (0.3-1.0 GPa) values obtained in nanoscale analysis and the values derived from macroscopic measurements (the composition obtained by proton backscattering spectroscopy coupled to the macroscopic porosity estimated from ellipsometry). This work provides new insights into these novel porous coatings, providing evidence of high-density He located inside the pores and validating the methodology applied here to characterize the formation of pores filled with the helium process gas during deposition. A similar stabilization of condensed He bubbles has been previously demonstrated by high-energy He ion implantation in metals and is newly demonstrated here using a widely employed methodology, magnetron sputtering, for achieving coatings with a high density of homogeneously distributed pores and He storage capacities as high as 21 at%.

  19. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    NASA Astrophysics Data System (ADS)

    Fortier, Jean-Philippe

    "Smart" windows are a perfect innovative example of technology that reduces our energy dependence and our impact on the environment while saving on the economical point of view. With the use of vanadium dioxide (VO2), a thermochromic compound, and this, as a thin coating, it would in fact be possible to control the sun's transmission of infrared light (heat) as a function of the surrounding environment temperature. In other words, its optical behavior would allow a more effective management of heat exchanges between a living venue and the outdoor environment. However, this type of window is still in a developmental stage. First, the oxide's deposition is not simple in nature. Based on a conventional deposition technique called magnetron sputtering mainly used in the fenestration industry, several factors such as the oxygen concentration and the substrate temperature during deposition can affect the coating's thermochromic behavior, and this, by changing its composition and crystallinity. Other control parameters such as the deposition rate, the pressure in the sputtering chamber and the choice of substrate may also modify the film microstructure, thereby varying its optical and electrical properties. In addition, several issues still persist as to its commercial application. For starters, the material's structural transition, related to the change of its optical properties, only occurs around 68°C. In addition, its low transparency and natural greenish colour are not visually appealing. Then, to this day, the deposition temperature required to crystallize and form the thermochromic oxide remains an obstacle for a possible large-scale application. Ultimately, although the material's change in temperature has been shown to be advantageous in situations of varying climate, the existing corrective solutions to these issues generate a deterioration of the thermochromic behavior. With no practical expertise on the material, this project was undertaken with certain

  20. Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

    NASA Astrophysics Data System (ADS)

    Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

    2017-05-01

    The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

  1. Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

    NASA Astrophysics Data System (ADS)

    Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

    2017-02-01

    The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

  2. The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shi, Zhifeng; Wang, Yingjun; Du, Chang; Huang, Nan; Wang, Lin; Ning, Chengyun

    2011-12-01

    Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N2 to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N2 to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

  3. Hierarchical structures produced using unbalanced magnetron sputtering for photocatalytic degradation of Rhodamine 6G dye

    NASA Astrophysics Data System (ADS)

    Polychronopoulou, K.; Aouadi, S. M.; Sirota, B.; Stone, D. S.; Wang, L.; Kohli, P.; McCarroll, M. E.

    2014-01-01

    Novel hierarchical nanostructures of ZnO-based semiconductors were synthesized on Si using unbalanced magnetron sputtering. This fabrication method is believed to be a significant breakthrough in the field of 1D nanostructure growth on substrates. These structures were created primarily as photocatalysts to degrade pollutants in water but other applications that include solar energy harvesting are possible. The crystal structure and the morphology of these materials were evaluated using X-ray diffraction and scanning electron microscopy, respectively. The morphology of the ZnO 1D nanostructures was modified from nanowires to nanofacets to nanodots by increasing substrate bias values from -12 to -70 V. In addition, hierarchical heterostructures were created by depositing Au and ZnO onto underlying ZnO nanowires. The length of the branches (30-70 nm) was found to be controlled by the deposition time of the metal oxide, while the morphology of the resulting structure was dependent on the amount of the sputtered Au speed. Based on ellipsometry studies on representative hierarchical structures, films having thicknesses of 0.9-1.3 × 10-4 m were obtained, while their porosity reached values of 50-70 %. These heterostructures were further modified by the deposition of a TiO2 shell. The above materials were assessed in terms of their optical properties (photoluminescence spectra) and their room temperature UV-Vis photocatalytic performance in terms of degradation of Rhodamine 6G dye (model compound). The hierarchical structures of ZnO showed an enhanced photocatalytic activity (higher rate constant, k, min-1) compared to the ZnO nanorods, while the TiO2 shell had a further increase which was attributed to the enhanced surface area and to charge transfer processes at the heterojunction.

  4. Subperiosteal implantation of various RF magnetron sputtered Ca-P coatings in goats.

    PubMed

    Wolke, J G; de Groot, K; Jansen, J A

    1998-01-01

    The aim of this study was to obtain more information about the initial biological events around RF magnetron sputtered calcium phosphate (Ca-P) coatings. Therefore, uncoated and coated disks were inserted subperiosteal into the tibia of a goat. The coatings were deposited on commercially pure titanium. The thickness of the coating was 0.1 or 2.0 microm. All the as-sputtered coatings were subjected to an additional heat treatment for 2 h at 500 degrees C. After 1 and 3 weeks of implantation the experimental disks were retrieved and prepared for histological and physicochemical analysis. The histological results demonstrated that the periosteum covered the specimens after both implantation periods. In between the periosteum and implant an acellular layer and a collagen matrix was observed. Energy dispersive spectrometry revealed that the acellular layer consisted of C, Ca, and P ions for the 0.1 microm thick Ca-P coatings. The 2 microm thick Ca-P coatings also showed the presence of sulfate ions in this layer. Only organic material was found on the titanium disks. Further, SEM showed that even after 3-week implantation, a substantial thickness of both coatings was still maintained. Thin film X-ray diffraction demonstrated that after both implantation periods, the CaP-0.1 coating was still present. FTIR of the retrieved specimens demonstrated on the coated disks the formation of additional carbonate apatite (CO3-AP) associated with an organic phase (NH2 groups). On basis of these findings we conclude that our experimental approach is very suitable for the investigation of the healing process around Ca-P coatings. Further, we again demonstrated that the initial interfacial response to Ca-P materials differs from titanium.

  5. Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Motyka, M. A.; Gauntt, B. D.; Horn, M. W.; Dickey, E. C.; Podraza, N. J.

    2012-11-01

    Vanadium oxide (VOx) thin films have been deposited by pulsed-DC magnetron sputtering using a metallic vanadium target in a reactive argon and oxygen environment. While the process parameters (power, total pressure, oxygen-to-argon ratio) remained constant, the deposition time was varied to produce films between 75 ± 6 and 2901 ± 30 Å thick, which were then optically and electrically characterized. The complex dielectric function spectra (ɛ = ɛ1 + iɛ2) of the films from 0.75 to 5.15 eV were extracted by ex situ, multiple-angle spectroscopic ellipsometry (SE) measurements for the series of varied thickness VOx samples. Significant changes in ɛ and resistivity occur as a function of thickness, indicating the correlations exist between the electrical and the optical properties over this spectral range. In addition, in situ measurements via real time SE (RTSE) were made on the film grown to the largest thickness to track optical property and structural variations during growth. RTSE was also used to characterize changes in the film occurring after growth was completed, namely during post sputtering in the presence of argon and oxygen while the sample is shielded, and atmospheric exposure. RTSE indicates that the exposure of the film to the argon and oxygen environment, regardless of the shutter isolating the target, causes up to 200 Å of the top surface of the deposited film to become more electrically resistive as evidenced by variations in ɛ. Exposure of the VOx thin film to atmospheric conditions introduces a similar change in ɛ, but this change occurs throughout the bulk of the film. A combination of these observations with RTSE results indicates that thinner, less ordered VOx films are more susceptible to drastic changes due to atmospheric exposure and that microstructural variations in this material ultimately control its environmental stability.

  6. Time resolved ion energy distribution functions of non-reactive and reactive high power impulse magnetron sputtering of titanium

    NASA Astrophysics Data System (ADS)

    Grosse, Katharina; Breilmann, Wolfgang; Maszl, Christian; Benedikt, Jan; von Keudell, Achim

    2016-09-01

    High power impulse magnetron sputtering (HiPIMS) is a technique for thin film deposition and can be operated in reactive and non-reactive mode. The growth rate of HiPIMS in non-reactive mode reduces to 30% compared to direct current magnetron sputtering (dcMS) at same average power. However, the quality of the coatings produced with HiPIMS is excellent which makes these plasmas highly appealing. In reactive mode target poisoning is occurring which changes the plasma dynamics. An advantage of reactive HiPIMS is that it can be operated hysteresis-free which can result in a higher growth rate compared to dcMS. In this work thin films are deposited by a HiPIMS plasma which is generated by short pulses of 100 μs with high power densities in the range of 1 kW/cm2. Ar and Ar/N2 admixtures are used as a working gas to sputter a 2'' titanium target. The particle transport is analysed with time resolved ion energy distribution functions which are measured by a mass spectrometer with a temporal resolution of 2 μs. Phase resolved optical emission spectroscopy is executed to investigate the particle dynamics of different species. The time and energy resolved particle fluxes in non-reactive and reactive mode are compared and implications on the sputter process are discussed.

  7. [Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature].

    PubMed

    Duan, Liang-fei; Yang, Wen; Zhang, Li-yuan; Li, Xue-ming; Chen, Xiao-bo; Yang, Pei-zhi

    2016-03-01

    The polycrystalline silicon thin films play an important role in the field of electronics. In the paper, α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering. The contents of Al radicals encapsulated-in the α-Si film can be adjusted by changing the Al to Si sputtering power ratios. The as-prepared α-Si films were converted into polycrystalline films by using a rapid thermal annealing (RTP) at low temperature of 350 degrees C for 10 minutes in N2 atmosphere. An X-ray diffractometer, and Raman scattering and UV-Visible-NIR Spectrometers were used to characterize the properties of the Pc-Si films. The influences of Al content on the properties of the Pc-Si films were studied. The results showed that the polycrystalline silicon films were obtained from α-SiAl composite films which were prepared by magnetron co-sputtering at a low temperature following by a rapid thermal annealing. The grain size and the degree of crystallization of the Pc-Si films increased with the increase of Al content, while the optical band gap was reduced. The nc-Si films were prepared when the Al to Si sputtering power ratio was 0.1. And a higher Crystallization rate (≥ 85%) of polycrystalline silicon films were obtained when the ratio was 0.3. The band gaps of the polycrystalline silicon films can be controlled by changing the aluminum content in the films.

  8. Characterization and Performance of Magnetron-Sputtered Zirconium Coatings Deposited on 9Cr-1Mo Steel

    NASA Astrophysics Data System (ADS)

    Singh, Akash; Murugesan, Somasundaram; Parameswaran, P.; Priya, R.; Thirumurugessan, R.; Muthukumar, N.; Mohandas, E.; Kamachi Mudali, U.; Krishnamurthi, J.

    2016-11-01

    Zirconium coatings of different thicknesses have been deposited at 773 K on 9Cr-1Mo steel substrate using pulsed DC magnetron sputtering. These coatings were heat treated in vacuum at two different temperatures (1173 and 1273 K) for one hour. X-ray diffraction (XRD) analysis of Zr-coated samples revealed the formation of α-phase (HCP structure) of Zr. XRD analysis of heat-treated samples show the presence of Zr3Fe and Zr2Fe intermetallics. The lattice parameter of these coatings was calculated, and it matches with the bulk values when the thickness reached 2µm. In order to understand this, crystallite size and strain values of these coatings were calculated from XRD plots employing Williamson-Hall method. In order to assess the performance of the coatings, systematic corrosion tests were carried out. The corrosion current density calculated from the polarization behavior showed that the corrosion current density of the uncoated 9Cr-1Mo steel was higher than the coated sample before and after the heat treatment. Studies using electrochemical impedance spectroscopy confirmed that the coated steel has higher impedance than the uncoated steel. The corrosion resistance of 9Cr1Mo steel had improved after Zr coating. However, the corrosion resistance of the coating after heat treatment decreased when compared to the as-deposited coating. The microstructure and composition of the surface oxide film influence the corrosion resistance of the Zr-coated 9Cr1Mo steel.

  9. Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

    SciTech Connect

    Reddy, R. Subba; Sreedhar, A.; Uthanna, S.

    2015-08-28

    Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was in the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.

  10. Ti-Nb thin films deposited by magnetron sputtering on stainless steel

    SciTech Connect

    Gonzalez, E. David; Niemeyer, Terlize C.; Afonso, Conrado R. M.; Nascente, Pedro A. P.

    2016-03-15

    Thin films of Ti-Nb alloys were deposited on AISI 316L stainless steel substrate by magnetron sputtering, and the structure, composition, morphology, and microstructure of the films were analyzed by means of x-ray diffraction (XRD), (scanning) transmission electron microscopy (TEM) coupled with energy-dispersive x-ray spectroscopy, atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS). Thin films of four compositions were produced: Ti{sub 85}Nb{sub 15} (Ti-26 wt. % Nb), Ti{sub 80}Nb{sub 20} (Ti-33 wt. % Nb), Ti{sub 70}Nb{sub 30} (Ti-45 wt. % Nb), and Ti{sub 60}Nb{sub 40} (Ti-56 wt. % Nb). Structural characterization by XRD indicated that only the β phase was present in the thin films and that the increase in the Nb content modified the alloy film texture. These changes in the film texture, also detected by TEM analysis, were attributed to different growth modes related to the Nb content in the alloy films. The mean grain sizes measured by AFM increased with the Nb amount (from 197 to 222 nm). XPS analysis showed a predominance of oxidized Ti and Nb on the film surfaces and an enrichment of Ti.

  11. Origin of the Delayed Current Onset in High Power Impulse Magnetron Sputtering

    SciTech Connect

    Yushkov, Georgy Yu.; Anders, Andre

    2010-07-19

    Repetitive pulses of voltage and current are applied in high power impulse magnetron sputtering. The current pulse usually lags the applied voltage by a significant time, which in some cases can reach many 10s of microseconds. The current time lag is generally highly reproducible and jitters less than 1percent of the delay time. This work investigates the time lag experimentally and theoretically. The experiments include several different target and gas combinations, voltage and current amplitudes, gas pressures, pulse repetition rates, and pulse durations. It is shown that in all cases the inverse delay is approximately proportional to the applied voltage, where the proportionality factor depends on the combination of materials and the conditions selected. The proportionality factor contains the parameters of ionization and secondary electron emission. The statistical time lag is negligible while the formative time lag is large and usually dominated by the ion motion (inertia), although, at low pressure, the long free path of magnetized electrons causing ionization contributes to the delay.

  12. Microstructure evolution with varied layer thickness in magnetron-sputtered Ni/C multilayer films.

    PubMed

    Peng, Jichang; Li, Wenbin; Huang, Qiushi; Wang, Zhanshan

    2016-08-12

    The microstructure evolution of magnetron-sputtered Ni/C multilayers was investigated by varying the Ni and C layer thickness in the region of a few nanometers. For the samples having 2.6-nm-thick C layers, the interface width increases from 0.37 to 0.81 nm as the Ni layer thickness decreases from 4.3 to 1.3 nm. Especially for the samples with Ni layers less than 2.0 nm, the interface width changes significantly due to the discontinuously distributed Ni crystallites. For the samples having 2.8-nm-thick Ni layers, the interface width increases from 0.37 to 0.59 nm when the C layer thickness decreases from 4.3 to 0.7 nm. The evolution of interface microstructures with varied Ni and C layers is explained based on a proposed simple growth model of Ni and C layers.

  13. Investigation of ionized metal flux in enhanced high power impulse magnetron sputtering discharges

    SciTech Connect

    Stranak, Vitezslav; Hubicka, Zdenek; Cada, Martin; Drache, Steffen; Hippler, Rainer; Tichy, Milan

    2014-04-21

    The metal ionized flux fraction and production of double charged metal ions Me{sup 2+} of different materials (Al, Cu, Fe, Ti) by High Power Impulse Magnetron Sputtering (HiPIMS) operated with and without a pre-ionization assistance is compared in the paper. The Electron Cyclotron Wave Resonance (ECWR) discharge was employed as the pre-ionization agent providing a seed of charge in the idle time of HiPIMS pulses. A modified grid-free biased quartz crystal microbalance was used to estimate the metal ionized flux fraction ξ. The energy-resolved mass spectrometry served as a complementary method to distinguish particular ion contributions to the total ionized flux onto the substrate. The ratio between densities of doubly Me{sup 2+} and singly Me{sup +} charged metal ions was determined. It is shown that ECWR assistance enhances Me{sup 2+} production with respect of absorbed rf-power. The ECWR discharge also increases the metal ionized flux fraction of about 30% especially in the region of lower pressures. Further, the suppression of the gas rarefaction effect due to enhanced secondary electron emission of Me{sup 2+} was observed.

  14. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Chistyakov, Roman

    2017-02-01

    Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  15. Formation Mechanism of Fe Nanocubes by Magnetron Sputtering Inert Gas Condensation.

    PubMed

    Zhao, Junlei; Baibuz, Ekaterina; Vernieres, Jerome; Grammatikopoulos, Panagiotis; Jansson, Ville; Nagel, Morten; Steinhauer, Stephan; Sowwan, Mukhles; Kuronen, Antti; Nordlund, Kai; Djurabekova, Flyura

    2016-04-26

    In this work, we study the formation mechanisms of iron nanoparticles (Fe NPs) grown by magnetron sputtering inert gas condensation and emphasize the decisive kinetics effects that give rise specifically to cubic morphologies. Our experimental results, as well as computer simulations carried out by two different methods, indicate that the cubic shape of Fe NPs is explained by basic differences in the kinetic growth modes of {100} and {110} surfaces rather than surface formation energetics. Both our experimental and theoretical investigations show that the final shape is defined by the combination of the condensation temperature and the rate of atomic deposition onto the growing nanocluster. We, thus, construct a comprehensive deposition rate-temperature diagram of Fe NP shapes and develop an analytical model that predicts the temporal evolution of these properties. Combining the shape diagram and the analytical model, morphological control of Fe NPs during formation is feasible; as such, our method proposes a roadmap for experimentalists to engineer NPs of desired shapes for targeted applications.

  16. The behaviour of arcs in carbon mixed-mode high-power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tucker, M. D.; Putman, K. J.; Ganesan, R.; Lattemann, M.; Stueber, M.; Ulrich, S.; Bilek, M. M. M.; McKenzie, D. R.; Marks, N. A.

    2017-04-01

    Mixed-mode deposition of carbon is an extension of high-power impulse magnetron sputtering in which a short-lived arc is deliberately allowed to ignite on the target surface to increase the ionised fraction of carbon in the deposition flux. Here we investigate the ignition and evolution of these arcs and examine their behaviour for different conditions of argon pressure, power supply voltage, and current. We find that mixed-mode deposition is sensitive to the condition of the target surface, and changing the operating parameters causes changes in the target surface condition which themselves affect the discharge in a process of negative feedback. Initially the arcs are evenly distributed on the target racetrack, but after a long period of operation the mode of erosion changes and arcs become localised in a small region, resulting in a pronounced nodular structure. We also quantify macroparticle generation and observe a power-law size distribution typical of arc discharges. Fewer particles are generated for operation at lower Ar pressure when the arc spot velocity is higher.

  17. Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Broitman, E.; Hellgren, N.; Czigány, Zs.; Twesten, R. D.; Luning, J.; Petrov, I.; Hultman, L.; Holloway, B. C.

    2003-07-01

    The microstructure, morphology, and mechanical properties of diamond-like carbon (DLC) films deposited by direct current magnetron sputtering were investigated for microelectromechanical systems applications. Film properties were found to vary markedly with the ion energy (Eion) and ion-to-carbon flux ratio (Jion/JC). Cross-sectional high-resolution transmission electron microscopy revealed an amorphous microstructure. However, the presence of nanometer-sized domains at Eion~85 eV was detected. Film stresses, σ, which were compressive in all cases, ranged from 0.5 to 3.5 GPa and depended on the flux ratio as well as ion energy. The hardness (H), Young's moduli (ɛ), and elastic recovery (R) increased with Eion to maximum values of H=27 GPa, ɛ=250 GPa, and R=68% at Eion=85 eV and Jion/JC=4.4. However, near edge x-ray absorption fine structure and electron energy-loss spectrum analysis showed that the sp2/sp3 content of the films does not change with Eion or Jion/JC. The measured change in mechanical properties without a corresponding change in sp2/sp3 ratio is not consistent with any previously published models. We suggest that, in the ranges 5 eV <=Eion<=85 eV and 1.1 <=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms has the dominant influence on the mechanical properties of DLC films.

  18. Development of hierarchical layered nanostructured α-MoO3 thin films using dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dayal, Saurabh; Sasi Kumar, C.

    2016-10-01

    The synthesis of environmentally friendly, catalyst free, hierarchical molybdenum oxide nanostructured thin films of different morphologies by a DC magnetron sputtering technique is reported. With increase in the annealing temperature, the spherical molybdenum nanoparticles arrange themselves in the form of vertically aligned nanorods and platelets stacked over one another. The preliminary phase analysis was carried out using x-ray diffraction. The sample annealed at 600 °C shows the formation of highly crystalline orthorhombic α-MoO3. Field emission scanning electron microscopy and transmission electron microscopy images confirm the formation of a layered structure at higher annealing temperatures, while the Raman spectroscopy revealed the stretching vibration modes of Mo-O bonds in the formation of the orthorhombic α-MoO3 layered structure. The Raman peaks at 667, 820 and 995 cm-1 correspond to the layered structure of orthorhombic α-MoO3. The electrical properties and possible growth mechanism of the as-prepared samples at different annealing temperatures are also discussed.

  19. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

    2016-08-01

    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  20. Exchange bias effect in NiMnSb/CrN heterostructures deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sharma Akkera, Harish; Barman, Rahul; Kaur, Navjot; Choudhary, Nitin; Kaur, Davinder

    2013-05-01

    Exchange bias has been studied in various Ni50Mn36.8Sb13.2/CrN heterostructures with different CrN thicknesses (15 nm-80 nm), grown on Si (100) substrate using magnetron sputtering. The shift in hysteresis loop up to 51 Oe from the origin was observed at 10 K for Ni-Mn-Sb film without CrN layer. On the other hand, a significant shifting of hysteresis loop was observed with antiferromagnetic (AFM) CrN layer in Ni50Mn36.8Sb13.2/CrN heterostructure. The exchange coupled 140 nm Ni50Mn36.8Sb13.2/35 nm CrN heterostructure exhibited a relatively large exchange coupling field of 148 Oe at 10 K compared to other films, which may be related to uncompensated and pinned AFM spins at FM-AFM interface and different AFM domain structures for different thicknesses of CrN layer. Further nanoindentation measurements revealed the higher values of hardness and elastic modulus of about 12.7 ± 0.38 GPa and 179.83 ± 1.24 GPa in Ni50Mn36.8Sb13.2/CrN heterostructures making them promising candidate for various multifunctional MEMS devices.

  1. Studies on Magnetron Sputtered ZnO-Ag Films: Adhesion Activity of S. aureus

    NASA Astrophysics Data System (ADS)

    Geetha, S. R.; Dhivya, P.; Raj, P. Deepak; Sridharan, M.; Princy, S. Adline

    Zinc oxide (ZnO) thin films have been deposited onto thoroughly cleaned stainless steel (AISI SS 304) substrates by reactive direct current (dc) magnetron sputtering and the films were doped with silver (Ag). The prepared thin films were analyzed using X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) to investigate the structural and morphological properties. The thickness values of the films were in the range of 194 to 256nm. XRD results revealed that the films were crystalline with preferred (002) orientation. Grain size values of pure ZnO films were found to be 19.82-23.72nm. On introducing Ag into ZnO film, the micro-structural properties varied. Adhesion test was carried out with Staphylococcus aureus (S. aureus) in order to know the adherence property of the deposited films. Colony formation units (CFU) were counted manually and bacterial adhesion inhibition (BAI) was calculated. We observed a decrease in the CFU on doping Ag in the ZnO films. BAI of the film deposited at - 100 V substrate bias was found to be increased on Ag doping from 69 to 88%.

  2. Nitrogen self-diffusion in magnetron sputtered Si-C-N films

    SciTech Connect

    Hueger, E.; Schmidt, H.; Geue, T.; Stahn, J.; Tietze, U.; Lott, D.; Markwitz, A.; Geckle, U.; Bruns, M.

    2011-05-01

    Self-diffusion was studied in magnetron sputtered nitrogen-rich amorphous compounds of the system Si-C-N by using nitrogen as a model tracer. As shown by infra-red spectroscopy a transient metastable region exists, where the structure of the material can be visualized as silicon nitride tetrahedra which are connected by carbo-diimide (-N=C=N-) bonds to a three dimensional amorphous network. In this region diffusion studies are carried out by neutron reflectometry and isotope multilayers as a function of annealing time, temperature and chemical composition. Low diffusivities between 10{sup -20} and 10{sup -24} m{sup 2}/s were found. In the metastable region, diffusion is faster than diffusion in amorphous silicon nitride by 1 to 2 orders of magnitude, while the activation enthalpies of diffusion between 3.1 and 3.4 eV are the same within error limits. This can be explained by the fact that the diffusion mechanism along SiN{sub 4} tetrahedra is identical to that in amorphous silicon nitride, however, the carbo-diimide bonds seem to widen the structure, allowing faster diffusion. A correlation between diffusivities and the number of carbo-diimid bonds present in the material is found, where the highest diffusivities are observed for materials with the highest number of carbo-diimid bonds, close to the composition Si{sub 2}CN{sub 4}.

  3. Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputtering

    SciTech Connect

    Colder, H.; Rizk, R.; Morales, M.; Marie, P.; Vicens, J.; Vickridge, I.

    2005-07-15

    Hydrogenated nanocrystalline silicon carbide were grown at various deposition temperatures T{sub d} from 200 to 600 deg. C by means of reactive magnetron sputtering in a plasma of 80% H{sub 2} and 20% Ar mixture. A detailed investigation of the structural, compositional, phase nature, and morphology was carried out by complementary sophisticated techniques, such as Fourier transform infrared spectroscopy, x-ray diffraction (XRD), Rutherford backscattering, nuclear reaction, and elastic recoil detection analysis techniques, in addition to conventional and high-resolution transmission electron microscopy (HRTEM) observations. A crystallization onset with a fraction of 35% was observed for T{sub d}=300 deg. C, which improved to 80% for T{sub d}=600 deg. C, reflected by an increasing density of the SiC nanocrystals which kept an average size of about 5 nm. The observed fiber textures present <102> and <11l> texture components, with l larger than 2, while SiC nanocrystals elongated along the [111] direction are also evidenced. These latter are supported by the careful analyses of the HRTEM images which show evidence of faulted growing cubic SiC, as the origin of the very close hexagonal 6H-SiC structure taken into account in the XRD refinement. These various features were found quite consistent with the optical properties of the layers, and, in particular, the evolutions of both optical gap and static refractive index.

  4. Nanoscale compositional analysis of NiTi shape memory alloy films deposited by DC magnetron sputtering

    SciTech Connect

    Sharma, S. K.; Mohan, S.; Bysakh, S.; Kumar, A.; Kamat, S. V.

    2013-11-15

    The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletion of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.

  5. Surface roughness and interface width scaling of magnetron sputter deposited Ni/Ti multilayers

    SciTech Connect

    Maidul Haque, S.; Biswas, A.; Tokas, R. B.; Bhattacharyya, D.; Sahoo, N. K.; Bhattacharya, Debarati

    2013-09-14

    Using an indigenously built r.f. magnetron sputtering system, several single layer Ti and Ni films have been deposited at varying deposition conditions. All the samples have been characterized by Grazing Incidence X-ray Reflectivity (GIXR) and Atomic Force Microscopy to estimate their thickness, density, and roughness and a power law dependence of the surface roughness on the film thickness has been established. Subsequently, at optimized deposition condition of Ti and Ni, four Ni/Ti multilayers of 11-layer, 21-layer, 31-layer, and 51-layer having different bilayer thickness have been deposited. The multilayer samples have been characterized by GIXR and neutron reflectivity measurements and the experimental data have been fitted assuming an appropriate sample structure. A power law correlation between the interface width and bilayer thickness has been observed for the multilayer samples, which was explained in the light of alternate roughening/smoothening of multilayers and assuming that at the interface the growth “restarts” every time.

  6. Microstructure and tribological properties of Ti-contained amorphous carbon film deposited by DC magnetron sputtering

    SciTech Connect

    Li, R. L.; Tu, J. P.; Hong, C. F.; Liu, D. G.; Zhou, D. H.; Sun, H. L.

    2009-12-15

    Pure amorphous carbon (a-C) film and that with a small amount of Ti were deposited on high speed steel (W18Cr4V) substrates by means of dc closed field unbalanced magnetron sputtering. The chemical composition and microstructure of the a-C films were performed using x-ray photoelectron spectroscopy, x-ray diffraction, Raman spectra, and transmission electron microscopy. The mechanical and tribological properties were evaluated using a nanoindentor, Rockwell and scratch tests, and a conventional ball-on-disk tribometer, respectively. The pure a-C film showed the high hardness (53 GPa), elastic modulus (289 GPa), but the poor adhesive strength. When adding a small amount of Ti to the a-C film, both the adhesive strength and the tribological properties were improved. The Ti contained a-C film had the low wear rate (1.9x10{sup -17} m{sup 3} N{sup -1} m{sup -1}) and friction coefficient in humid air.

  7. Superior biofunctionality of dental implant fixtures uniformly coated with durable bioglass films by magnetron sputtering.

    PubMed

    Popa, A C; Stan, G E; Enculescu, M; Tanase, C; Tulyaganov, D U; Ferreira, J M F

    2015-11-01

    Bioactive glasses are currently considered the suitable candidates to stir the quest for a new generation of osseous implants with superior biological/functional performance. In congruence with this vision, this contribution aims to introduce a reliable technological recipe for coating fairly complex 3D-shaped implants (e.g. dental screws) with uniform and mechanical resistant bioactive glass films by the radio-frequency magnetron sputtering method. The mechanical reliability of the bioactive glass films applied to real Ti dental implant fixtures has been evaluated by a procedure comprised of "cold" implantation in pig mandibular bone from a dead animal, followed by immediate tension-free extraction tests. The effects of the complex mechanical strains occurring during implantation were analysed by scanning electron microscopy coupled with electron dispersive spectroscopy. Extensive biocompatibility assays (MTS, immunofluorescence, Western blot) revealed that the bioactive glass films stimulated strong cellular adhesion and proliferation of human dental pulp stem cells, without promoting their differentiation. The ability of the implant coatings to conserve a healthy stem cell pool is promising to further endorse the fabrication of new osseointegration implant designs with extended lifetime.

  8. Nanocharacterization of titanium nitride thin films obtained by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Merie, V. V.; Pustan, M. S.; Bîrleanu, C.; Negrea, G.

    2014-08-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-microelectromechanical systems (Bio-MEMS) and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, the obtaining was realized when the substrates were at room temperature, and second, the obtaining was realized when the substrates were previously heated at 250 °C. The elaborated samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, roughness, friction force are some of the determined characteristics. The results marked out that the substrate which was previously heated at 250 °C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature.

  9. Optical Tailoring of RF Magnetron Sputtered ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Hassan, A.; Feng, C.; Riaz, S.; Naseem, S.; Jiang, Y.

    2017-06-01

    Pure and N2 doped ZnO thin films of thickness ranging ∼300-500nm with 5,10,15,20,25, and 50 sccm inflow ratios of N2 are deposited on soda-lime glass by means of RF magnetron sputtering system, and observed the dependence of optical properties of ZnO by the function of doping with the help of spectroscopic ellipsometer. And found that the N2-inflow highly affects the optical properties of ZnO thin films. Even the high transmittance of about 97% is achieved and absorbance graph also shows that slight variation in N2 inflow affects the absorbance, which is maximum with in UV region. Optical conductivity of ZnO is also observed high with the increase of N2 inflow. With 25sccm N2 inflow conductivity rose to the maximum value of about 1.4 × 107 Ω -1cm-1, with 15sccm inflow of N2 conductivity value is 2.0 × 106 Ω -1cm-1 in the visible region. This is a strong contribution towards next generation photovoltaic devices.

  10. Growth of TiO{sub 2} Thin Film on Various Substrates using RF Magnetron Sputtering

    SciTech Connect

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2011-03-30

    The conductivity of Titanium Dioxide (TiO{sub 2}) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO{sub 2} was deposited using Ti target in Ar+O{sub 2}(45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10{sup -7} to 1.54x10{sup -6{Omega}}.m, Si substrate range is between 3.52x10{sup -6} to 1.76x10{sup -5{Omega}}.m and M substrate range is between 99 to 332 {Omega}.m. The value of resistivity increases with the thickness of the thin film.

  11. Properties of Cu(In,Ga,Al)Se{sub 2} thin films fabricated by magnetron sputtering

    SciTech Connect

    Hameed, Talaat A.; Cao, Wei; Mansour, Bahiga A.; Elzawaway, Inas K.; Abdelrazek, El-Metwally M.; Elsayed-Ali, Hani E.

    2015-05-15

    Cu(In,Ga,Al)Se{sub 2} (CIGAS) thin films were studied as an alternative absorber layer material to Cu(In{sub x}Ga{sub 1−x})Se{sub 2}. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350 °C, followed by postdeposition annealing at 520 °C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2θ values with increasing Al content. Scanning electron microscopy images revealed dense and well-defined grains, as well as sharp CIGAS/Si(100) interfaces for all films. Atomic force microscopy analysis indicated that the roughness of CIGAS films decreases with increasing Al content. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as Al content increased.

  12. Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

    PubMed Central

    2012-01-01

    Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se2 solar cells. PMID:22221917

  13. Deposition of Visible Light Active Photocatalytic Bismuth Molybdate Thin Films by Reactive Magnetron Sputtering.

    PubMed

    Ratova, Marina; Kelly, Peter J; West, Glen T; Xia, Xiaohong; Gao, Yun

    2016-01-22

    Bismuth molybdate thin films were deposited by reactive magnetron co-sputtering from two metallic targets in an argon/oxygen atmosphere, reportedly for the first time. Energy dispersive X-ray spectroscopy (EDX) analysis showed that the ratio of bismuth to molybdenum in the coatings can be effectively controlled by varying the power applied to each target. Deposited coatings were annealed in air at 673 K for 30 min. The crystalline structure was assessed by means of Raman spectroscopy and X-ray diffraction (XRD). Oxidation state information was obtained by X-ray photoelectron spectroscopy (XPS). Photodegradation of organic dyes methylene blue and rhodamine B was used for evaluation of the photocatalytic properties of the coatings under a visible light source. The photocatalytic properties of the deposited coatings were then compared to a sample of commercial titanium dioxide-based photocatalytic product. The repeatability of the dye degradation reactions and photocatalytic coating reusability are discussed. It was found that coatings with a Bi:Mo ratio of approximately 2:1 exhibited the highest photocatalytic activity of the coatings studied; its efficacy in dye photodegradation significantly outperformed a sample of commercial photocatalytic coating.

  14. Deposition of Visible Light Active Photocatalytic Bismuth Molybdate Thin Films by Reactive Magnetron Sputtering

    PubMed Central

    Ratova, Marina; Kelly, Peter J.; West, Glen T.; Xia, Xiaohong; Gao, Yun

    2016-01-01

    Bismuth molybdate thin films were deposited by reactive magnetron co-sputtering from two metallic targets in an argon/oxygen atmosphere, reportedly for the first time. Energy dispersive X-ray spectroscopy (EDX) analysis showed that the ratio of bismuth to molybdenum in the coatings can be effectively controlled by varying the power applied to each target. Deposited coatings were annealed in air at 673 K for 30 min. The crystalline structure was assessed by means of Raman spectroscopy and X-ray diffraction (XRD). Oxidation state information was obtained by X-ray photoelectron spectroscopy (XPS). Photodegradation of organic dyes methylene blue and rhodamine B was used for evaluation of the photocatalytic properties of the coatings under a visible light source. The photocatalytic properties of the deposited coatings were then compared to a sample of commercial titanium dioxide-based photocatalytic product. The repeatability of the dye degradation reactions and photocatalytic coating reusability are discussed. It was found that coatings with a Bi:Mo ratio of approximately 2:1 exhibited the highest photocatalytic activity of the coatings studied; its efficacy in dye photodegradation significantly outperformed a sample of commercial photocatalytic coating. PMID:28787867

  15. Abrasion resistant low friction and ultra-hard magnetron sputtered AlMgB14 coatings

    NASA Astrophysics Data System (ADS)

    Grishin, A. M.

    2016-04-01

    Hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric AlMgB14 ceramic target. X-ray amorphous AlMgB14 films are very smooth. Their roughness does not exceed the roughness of Si wafer and Corning glass used as the substrates. Dispersion of refractive index and extinction coefficient were determined within 300 to 2500 nm range for the film deposited onto Corning glass. Stoichiometric in-depth compositionally homogeneous 2 μm thick films on the Si(100) wafer possess the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth. Friction coefficient was found to be 0.06. The coating scratch adhesion strength of 14 N was obtained as the first chipping of the coating whereas its spallation failure happened at 21 N. These critical loads and the work of adhesion, estimated as high as 18.4 J m-2, surpass characteristics of diamond like carbon films deposited onto tungsten carbide-cobalt (WC-Co) substrates.

  16. GMR in DC magnetron sputtered Ni{sub 81}Fe{sub 19}/Cu multilayers

    SciTech Connect

    Mao, M.; Cerjan, C.; Gibbons, M.; Law, B.; Grabner, F.; Vernon, S.P.; Wall, M.

    1998-07-01

    In this paper, the authors present results of a study on Ni{sub 81}Fe{sub 19}/Cu magnetic multilayers (MLs) deposited using a four-source DC magnetron sputtering system operated in planetary mode. A significant change of GMR value with deposition conditions, especially base pressure and deposition pressure, has been observed for Ni{sub 81}Fe{sub 19}/Cu MLs. With an optimized process, they have obtained a GMR response of 9.5% with a field sensitivity of 0.44%/Oe for Si/ [(Ni{sub 81}Fe{sub 19})17{angstrom}/Cu20{angstrom}]{sub 20} MLs without an Fe buffer layer. The insertion of a very thin layer of a second magnetic species at nonmagnetic/magnetic interfaces in the ML stack makes GMR response either sensitive or less sensitive to deposition conditions depending on the species selected. They believe that the key to obtaining large GMR values in Ni{sub 81}Fe{sub 19}/Cu MLs lies in the control of layered structure and interfacial chemistry. In addition, these Ni{sub 81}Fe{sub 19}/Cu MLs survive high temperature annealing up to 250 C, retaining a GMR value of 8.5%.

  17. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect

    Singh, Kirandeep; Kaur, Davinder; Singh, Sushil Kumar

    2014-09-21

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  18. Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering

    SciTech Connect

    Sah, R. E.; Kirste, L.; Baeumler, M.; Hiesinger, P.; Cimalla, V.; Lebedev, V.; Baumann, H.; Zschau, H.-E.

    2010-05-15

    The authors report on the stability of mechanical stress with aging and thermal cycling for columnar structured stoichiometric and homogeneous aluminum nitride thin films grown using radio frequency magnetron sputtering technique. The set of deposition parameters were optimized for the best possible orientation of crystallites in the c axis of compositionally stoichiometric films. The as-grown stress in the slightly nitrogen-rich film does not change when exposed to the atmosphere following deposition, while that in the nitrogen-deficient film, it changes due to oxidation. Additionally, the magnitude of as-grown stress has been found to depend on the substrate material in addition to the deposition parameters. The stress in the film grown on a Si(001) substrate was more tensile than in the film grown on a semi-insulating (si) GaAs(001) substrate for a given set of deposition parameters. Furthermore, the stress in the film grown on Si decreased with temperature, while that on si GaAs increased, indicating the thermally induced stress component to be the major component in the residual stress. Upon subsequent cooling the stress changes in both substrates followed the same path as of heating, thus exhibiting no hysteresis with thermal cycles between room temperature and 400 deg. C.

  19. Application of RF magnetron sputtering for growth of AZO on glass substrate

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Salar Elahi, A.; Ghoranneviss, M.

    2016-08-01

    Aluminum zinc oxide (AZO), as one of the most promising transparent conducting oxide (TCO) materials, has now been widely used in thin film solar cells. In this study the optimization process of the RF magnetron sputtered AZO films was performed at room temperature by studying its physical properties such as structural, optical, electrical and morphological at different deposition times (10, 20, 40 and 60 min) for its use as a front contact for the Cadmium Telluride (CdTe) based thin film solar cell applications. Influence of the deposition time was investigated on the physical properties of the AZO thin film by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectrophotometer and four point probes. XRD analysis suggests that the preferred orientation of grains for all the samples prepared at different growth times are along (002) plane having the hexagonal structure. From optical measurements the films show an average transmission over 60%. Moreover it was found that by increasing the growth time, which implies increasing the film thicknesses as well as improving the crystallinity the resistivity of the grown films decrease from the 10-2 Ωcm to the order of 10-3 Ωcm.

  20. Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sun, Jian-xu; Mi, Wei; Zhang, De-shuang; Yang, Zheng-chun; Zhang, Kai-liang; Han, Ye-mei; Yuan, Yu-jie; Zhao, Jin-shi; Li, Bo

    2017-07-01

    Gallium oxide (Ga2O3) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga2O3 films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure ( β-Ga2O3). Structure analysis reveals a clear out-of-plane orientation of β-Ga2O3 (2̅01) ǁ Al2O3 (0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga2O3 film can be used in the UV optoelectronic devices.

  1. Nanostructured phothocatalytic TiO2 thin film fabricated by magnetron sputtering on glass

    NASA Astrophysics Data System (ADS)

    Abdollahi Nejand, Bahram; Sanjabi, Sohrab; Ahmadi, Vahid

    TiO2 thin film was deposited by a DC reactive magnetron sputtering on ZnO/soda-lime glass substrate and single crystal SiO2 below 200 °C. ZnO layer was used as a buffer layer. Deposition was performed at Ar + O2 gas mixture with a pressure of 1.0 Pa and oxygen with a constant pressure of 0.2 Pa. The TiO2 / ZnO thicknesses were approximately 1000 nm and 80 nm, respectively. As-deposited films were annealed at 400 °C. The structure and morphology of deposited layers were evaluated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The transmittance of the films was measured using ultraviolet-visible light (UV-vis) spectrophotometer. Photocatalytic activities of the samples were evaluated by the degradation of 2-propanol. The microstructure of annealed films was anatase, having improved photocatalytic activity. The surface grain size of TiO2 thin film after annealing was found about 25-35 nm and crystal size was approximately 8 nm. By using ZnO thin film as buffer layer, the photocatalytic property of TiO2 films was improved.

  2. Orientational control of CeO2 films on sapphire substrates grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Yamamoto, S.; Sugimoto, M.; Koshikawa, H.; Hakoda, T.; Yamaki, T.

    2017-06-01

    The effect of deposition temperature and post-annealing on the crystallographic orientation of cerium dioxide (CeO2) films on sapphire (α-Al2O3) substrates were investigated. CeO2 films, with thickness of 17 nm, were grown on c-plane and r-plane sapphire substrates by radiofrequency (rf) magnetron sputtering. Deposition temperatures between 150 and 500 °C were used with a sintered CeO2 target in an Ar-O2 gas mixture. The post-annealing treatment was performed in air at various temperatures ranging from 400 to 1000 °C. The films were characterized by X-ray diffraction, atomic force microscopy, and Rutherford backscattering spectroscopy. X-ray diffraction studies revealed that the orientation of the CeO2 films changed from (001) to mixed (001)/(111) and then to (111), with increasing deposition temperatures on both the c-plane and r-plane sapphire substrates. Post-annealing at 1000 °C improved the degree of crystallinity of the films, and formed rectangular grains. The results suggest that control of the deposition and post-annealing temperatures provides orientation-controlled CeO2 films on c- and r-plane sapphire substrates.

  3. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  4. Structural, optical and electrical properties of WOxNy filmsdeposited by reactive dual magnetron sputtering

    SciTech Connect

    Mohamed, Sodky H.; Anders, Andre

    2006-06-05

    Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

  5. Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, X. X.; Wu, Y. Z.; Mu, B.; Qiao, L.; Li, W. X.; Li, J. J.; Wang, P.

    2017-03-01

    Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W2N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W2N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W2N phase was negligible. The complete decomposition of W2N film happened as the temperature reached up to 1473 K.

  6. Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering

    SciTech Connect

    Rosen, Johanna; Widenkvist, Erika; Larsson, Karin; Kreissig, Ulrich; Mraz, Stanislav; Martinez, Carlos; Music, Denis; Schneider, J. M.

    2006-05-08

    The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O{sub 2}/H{sub 2}O environment. Ar{sup +} with an average kinetic energy of {approx}5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from -15 V (floating potential) to -100 V, the hydrogen content decreased by {approx}70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H{sub 2} formation, and desorption [Rosen et al., J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient.

  7. Study of magnetic thin films deposited by closed-field unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ormston, M. W.; Petford-Long, A. K.; Teer, D. G.

    1999-04-01

    Closed-field unbalanced magnetron sputtering, developed by TEER Coatings Ltd., uses a novel plasma confinement system, which allows controllable high-rate deposition from a wide range of target materials. We report the first use of this technique using ferromagnetic target materials to grow films of nanometer thickness. A study was carried out on a series of Py/Cu/Py and Py/Au/Py magnetic multilayer films, with and without underlayers of Ti or Ta. High-resolution electron microscopy showed that 5 nm of Ti or 15 nm of Ta did not change the structure of the trilayers. The use of Au as a spacer layer induced a texture in the upper Py layer, which decreased its saturation field by half. In situ experiments to observe the effects of an applied field on the domain structure of the films were carried out using Lorentz transmission electron microscopy. Variations in the switching field of the Py layers and of the coupling strength between the Py layers were observed when the thicknesses of the three layers were varied. Double domain wall structures with different wall intensities were observed in some cases. The roughness of the interfaces were increased by ion bombardment; this increased the saturation field of the Py layers.

  8. Microstructure, hydrogenation and optical behavior of Mg-Ni multilayer films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, H.; Wang, X. L.; Qiao, Y. Q.; Xia, X. H.; Tu, J. P.

    2011-04-01

    Mg-Ni multilayer films with sequential Mg and Ni layers were prepared by direct current magnetron sputtering. The substrate temperature influences the microstructure of the films greatly. The film deposited at 298 K exhibits multilayered structure, while the film shows nanocrystalline/amorphous composite structure at the deposition temperature of 473 K. The optical properties between hydrogenation/dehydrogenation states of the films were performed using spectrophotometer in visible light region. The film deposited at 473 K can switch from mirror-like metallic state towards brownish yellow transparent state under 0.6 MPa H2 at 298 K, and the optical transmittance modulation reaches up to 20% both at a wavelength of 770 nm and IR region, while the film deposited at 298 K exhibits low optical change, and the optical switching behavior can hardly be found. The extra free energy stored in the boundary of the nanocrystallines benefits the formation of magnesium-based hydride, resulting in the enhancement of the optical switching properties of the Mg-Ni film deposited at 473 K.

  9. Highly phosphorus-doped crystalline Si layers grown by pulse-magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Fenske, Frank; Gorka, Benjamin

    2009-04-01

    The electrical properties of highly phosphorus-doped crystalline silicon films deposited by pulse-magnetron sputtering were studied. The films were grown, 450 nm thick, on Si(100) and Si(111) wafers at low substrate temperatures Ts of 450-550 °C and post-treated by rapid thermal annealing (RTA) and plasma hydrogenation (PH). In the case of films grown on Si(100), at all values of Ts postgrowth treatment by RTA resulted in an increase in the dopant activation up to 100% and of the Hall mobility to about bulklike values of 50 cm2 V-1 s-1. This result suggests high structural quality of the films on Si(100). The Si(111) films, which are typically more defective, exhibit a completely different behavior with a strong dependence of the electrical dopant activation and the Hall mobility on Ts. By post-treatment a maximum P donor activation level of 22% could be obtained. The variation in the post-treatment procedure (RTA+PH and PH+RTA) for the films deposited at high Ts showed that PH results only in minor changes in the film properties. The different influence of RTA and PH is discussed in terms of the different defect structure of the films. These investigations reveal that high Ts and after-treatment by RTA are the main preconditions for optimal electrical film properties.

  10. Application of 60 mm/φ superconducting bulk magnet to magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Matsuda, T.; Kashimoto, S.; Imai, A.; Yanagi, Y.; Itoh, Y.; Ikuta, H.; Mizutani, U.; Sakurai, K.; Hazama, H.

    2003-10-01

    We constructed the planar magnetron sputtering apparatus using a c-axis oriented single-domain Sm123 bulk superconductor with 60 mm in diameter as a very powerful magnet in place of an ordinary Nd-Fe-B magnet. A high magnetic field of 4.2 T at the surface of the superconductor coupled with a high target voltage of maximum 6 kV enabled us to discharge even at pressure of 1 × 10 -3 Pa. A target-to-substrate distance of 300 mm was successfully employed under low pressures of 10 -2-10 -3 Pa to make the deposition of almost contamination-free films feasible. The simulation software (JMAG) was used to optimize the magnetic circuit configurations. The simulations could reproduce well the distribution of the magnetic field above the target measured by a three-axial Hall sensor. The discharging characteristics of Cu, Ni and Fe targets in the pressure range over 10 -1-10 -3 Pa were studied under different target voltages. The deposition rates of 0.063 nm/s (or 38 Å/min) and 0.013 nm/s (or 8 Å/min) were achieved for Cu and Fe targets with 3 mm in thickness, respectively, under the Ar pressure of 6.6 × 10 -2 Pa (or 4.9 × 10 -4 Torr).

  11. Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

    SciTech Connect

    Aryanto, Didik; Marwoto, Putut; Sugianto; Sudiro, Toto; Birowosuto, Muhammad D.

    2016-04-19

    Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.

  12. Anti-icing performance in glaze ice of nanostructured film prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Liao, Ruijin; Zuo, Zhiping; Guo, Chao; Zhuang, Aoyun; Zhao, Xuetong; Yuan, Yuan

    2015-11-01

    Ice accumulation on insulators may inflict problems of flashover accidents, tower collapse and power failure. In this work, the nanostructured film on glass was fabricated by radio frequency (RF) magnetron sputtering. The wettability, surface morphology, chemical composition and XRD pattern were analyzed by corresponding methods. The anti-icing performance in ;glaze ice; was investigated in an artificial climate chamber. It was found that the as-prepared superhydrophobic (SHP) surface exhibited a prominent superhydrophobicity with a contact angle (CA) of 165.6° and sliding angle smaller than 1°. The superhydrophobicity of the as-prepared SHP surface was attributed to the low surface energy of hexadecyltrimethoxy silane and ZnO nanorods along with the presence of high fraction of air pockets. Besides, the as-prepared SHP surface demonstrated excellent anti-icing behavior in glaze ice and could effectively reduce the freezing area. The results showed that 70.4% of the as-prepared SHP surface remained free of ice after spraying for 90 min in glaze. This method proposed a way to design an anti-icing surface and may have potential in application on glass insulators against ice accumulation.

  13. Synthesis of copper nitride films doped with Fe, Co, or Ni by reactive magnetron sputtering

    SciTech Connect

    Yang, Jianbo; Huang, Saijia; Wang, Zhijiao; Hou, Yuxuan; Shi, Yuyu; Zhang, Jian; Yang, Jianping Li, Xing'ao

    2014-09-01

    Copper nitride (Cu{sub 3}N) and Fe-, Co-, and Ni-doped Cu{sub 3}N films were prepared by reactive magnetron sputtering. The films were deposited on silicon substrates at room temperature using pure Cu target and metal chips. The molar ratio of Cu to N atoms in the as-prepared Cu{sub 3}N film was 2.7:1, which is comparable with the stoichiometry ratio 3:1. X-ray diffraction measurements showed that the films were composed of Cu{sub 3}N crystallites with anti-ReO{sub 3} structure and adopted different preferred orientations. The reflectance of the four samples decreased in the wavelength range of 400–830 nm, but increased rapidly within wavelength range of 830–1200 nm. Compared with the Cu{sub 3}N films, the resistivity of the doped Cu{sub 3}N films decreased by three orders of magnitude. These changes have great application potential in optical and electrical devices based on Cu{sub 3}N films.

  14. Biocompatibility and Surface Properties of TiO2 Thin Films Deposited by DC Magnetron Sputtering

    PubMed Central

    López-Huerta, Francisco; Cervantes, Blanca; González, Octavio; Hernández-Torres, Julián; García-González, Leandro; Vega, Rosario; Herrera-May, Agustín L.; Soto, Enrique

    2014-01-01

    We present the study of the biocompatibility and surface properties of titanium dioxide (TiO2) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO2 thin films is analyzed using primary cultures of dorsal root ganglion (DRG) of Wistar rats, whose neurons are incubated on the TiO2 thin films and on a control substrate during 18 to 24 h. These neurons are activated by electrical stimuli and its ionic currents and action potential activity recorded. Through X-ray diffraction (XRD), the surface of TiO2 thin films showed a good quality, homogeneity and roughness. The XRD results showed the anatase to rutile phase transition in TiO2 thin films at temperatures between 500 and 1100 °C. This phase had a grain size from 15 to 38 nm, which allowed a suitable structural and crystal phase stability of the TiO2 thin films for low and high temperature. The biocompatibility experiments of these films indicated that they were appropriated for culture of living neurons which displayed normal electrical behavior. PMID:28788667

  15. Optical, structural, and mechanical properties of silicon oxynitride films prepared by pulsed magnetron sputtering.

    PubMed

    Tang, Chien-Jen; Jaing, Cheng-Chung; Tien, Chuen-Lin; Sun, Wei-Chiang; Lin, Shih-Chin

    2017-02-01

    Silicon oxynitride films were deposited by reactive pulsed magnetron sputtering. The optical, structural, and mechanical properties of silicon oxynitride films with different nitrogen proportions were analyzed via spectroscopy, atomic force microscopy, Twyman-Green interferometer, and nanoindentation. The refractive indices of the silicon oxynitride films were adjusted from 1.487 to 1.956 with the increase in nitrogen proportions. The surface roughness decreased from 1.33 to 0.97 nm with the increase in nitrogen proportions. The residual stress of the silicon oxynitride films was higher than for pure silicon nitride and silicon dioxide films. The hardness and Young's modulus increased from 13.51 to 19.74 GPa and 110.41 to 140.49 GPa with the increase in nitrogen proportions, respectively. The hardness and Young's modulus of antireflection coatings using silicon oxynitride film were 13.64 GPa and 102.11 GPa, respectively. Silicon oxynitride film could be used to improve the hardness of antireflective coatings.

  16. Rapidly switched wettability of titania films deposited by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shirolkar, Mandar; Kazemian Abyaneh, Majid; Singh, Akanksha; Tomer, Anju; Choudhary, Ram; Sathe, Vasant; Phase, Deodatta; Kulkarni, Sulabha

    2008-08-01

    Rapid switching (5-15 minutes) in the wettability of titania (TiO2) thin films in the anatase phase has been observed after UV irradiation. The film surface becomes superhydrophilic when exposed to UV radiation. The relationship between wettability, thickness and crystallinity of TiO2 films has been investigated. Amorphous and anatase TiO2 thin films have been deposited by varying the argon to oxygen gas ratio, using the reactive dc magnetron sputtering technique. It was found that the gas ratio primarily affects thickness, crystallinity, morphology and wettability of the films. The highest contact angle that has been reported so far, namely, 170°-176°, has been observed for film thickness varying from 112-500 nm in the case of pristine anatase TiO2 films. On the other hand, amorphous films show a variation in the contact angle from 120° to 140° as the thickness varied from 70 to 145 nm. The deposition is extremely robust and has an ultralow hysteresis in the contact angle. The films exhibit a morphology similar to the lotus leaf and the water hyacinth.

  17. Magnetron Plasma Sputtered Nanocomposite Thin Films: Structural Surface Studies by In Vacuo Photoelectron Spectroscopy

    SciTech Connect

    Videnovic, Ivan R.

    2004-12-01

    The experimental system that enables thin film deposition by chemical vapor deposition combined with magnetron sputtering and sample surface characterization by photoelectron spectroscopy (PES), without breaking the vacuum between the deposition and the characterization stage, is described. The particular goal of this work was study of the surface arrangement of embedded metallic nanoclusters of 1B group (Au, Ag, and Cu) in amorphous hydrogenated carbon (a-C:H). From the range of applied material characterization tools, we present here the results of several PES-based experiments used to reveal cluster properties at the surface: as-deposited sample PES measurements, off-normal take-off angle XPS, and in situ in-depth XPS profiling by Ar+ ion etching. Clear distinction in all PES results of the samples deposited on the grounded substrates from those deposited on -150 V dc biased ones is obtained, revealing that keeping the substrate grounded during deposition results in topmost metallic clusters covered with a very thin layer of a-C:H, while applying negative bias voltage to the substrate results in partially bald clusters on the surface.

  18. Fractal features of CdTe thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-12-01

    Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  19. Thermal stability and thermo-mechanical properties of magnetron sputtered Cr-Al-Y-N coatings

    SciTech Connect

    Rovere, Florian; Mayrhofer, Paul H.

    2008-01-15

    Cr{sub 1-x}Al{sub x}N coatings are promising candidates for advanced machining and high temperature applications due to their good mechanical and thermal properties. Recently the authors have shown that reactive magnetron sputtering using Cr-Al targets with Al/Cr ratios of 1.5 and Y contents of 0, 2, 4, and 8 at % results in the formation of stoichiometric (Cr{sub 1-x}Al{sub x}){sub 1-y}Y{sub y}N films with Al/Cr ratios of {approx}1.2 and YN mole fractions of 0%, 2%, 4%, and 8%, respectively. Here, the impact of Y on thermal stability, structural evolution, and thermo-mechanical properties is investigated in detail. Based on in situ stress measurements, thermal analyzing, x-ray diffraction, and transmission electron microscopy studies the authors conclude that Y effectively retards diffusional processes such as recovery, precipitation of hcp-AlN and fcc-YN, grain growth, and decomposition induced N{sub 2} release. Hence, the onset temperature of the latter shifts from {approx}1010 to 1125 deg. C and the hardness after annealing at T{sub a}=1100 deg. C increases from {approx}32 to 39 GPa with increasing YN mole fraction from 0% to 8%, respectively.

  20. Effect of amorphous C films deposited by RF magnetron sputtering on smoothing K9 glass substrate

    NASA Astrophysics Data System (ADS)

    Deng, Songwen; Qi, Hongji; Wei, Chaoyang; Yi, Kui; Fan, Zhengxiu; Shao, Jianda

    2009-12-01

    Soft X-ray multilayer reflectors must be deposited on super-smooth surface such as super-polished silicon wafers or glasses, which are complicate, time-consuming and expensive to produce. To overcome this shortage, C films deposited by RF magnetron sputtering were considered to smooth the K9 glass substrates' surface in the present paper. The structure of C films was systematically studied by XRD and Raman spectrum. The surface morphology and rms-roughness were obtained by AFM. Then, we calculated the impact of the C layers on the reflectivity curve of Mo/Si soft X-ray multilayer reflector around 13.5 nm. The C films exhibit typical amorphous state. With the increasing of power and thickness, the content of sp3 hybrid bonding decreases while the amount or size of well-organized graphite clusters increases. The surface rms-roughness decreases from 2.4 nm to 0.62 nm after smoothed by an 80 nm thick C layer deposited in 500 W, which is the smoothest C layer surface we have obtained. The calculation results show that the theoretical normal incidence reflectivity of Mo/Si multilayer at 13.5 nm increases from 7% to 63%.

  1. Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lee, Deuk Yeon; Baik, Hong-Koo

    2008-08-01

    Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of deposited films were investigated as a function of cesium partial vapor pressure controlled by cesium reservoir temperature. We calculated the cesium coverage on the target surface showing maximum formation efficiency of negative ions by means of the theoretical model. Cesium addition promotes the formation efficiency of negative ions, which plays important role in enhancing the crystallinity of ITO films. In particular, the plasma density was linearly increased with cesium concentrations. The resultant decrease in specific resistivity and increase in transmittance (82% in the visible region) at optimum cesium concentration (4.24 × 10 -4 Ω cm at 80 °C of reservoir temperature) may be due to enhanced crystallinity of ITO films. Excess cesium incorporation into ITO films resulted in amorphization of its microstructure leading to degradation of ITO crystallinity. We discuss the cesium effects based on the growth mechanism of ITO films and the plasma density.

  2. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  3. Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

    NASA Astrophysics Data System (ADS)

    Akbarnejad, E.; Ghorannevis, Z.; Abbasi, F.; Ghoranneviss, M.

    2017-03-01

    Cadmium sulfide (CdS) thin films are deposited on the fluorine doped tin oxide coated glass substrate using the radio frequency magnetron sputtering setup. The effects of annealing in air on the structural, morphological, and optical properties of CdS thin film are studied. Optimal annealing temperature is investigated by annealing the CdS thin film at different annealing temperatures of 300, 400, and 500 °C. Thin films of CdS are characterized by X-ray diffractometer analysis, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR spectrophotometer and four point probe. The as-grown CdS films are found to be polycrystalline in nature with a mixture of cubic and hexagonal phases. By increasing the annealing temperature to 500 °C, CdS film showed cubic phase, indicating the phase transition of CdS. It is found from physical characterizations that the heat treatment in air increased the mean grain size, the transmission, and the surface roughness of the CdS thin film, which are desired to the application in solar cells as a window layer material.

  4. Studies on Nanostructure Aluminium Thin Film Coatings Deposited using DC magnetron Sputtering Process

    NASA Astrophysics Data System (ADS)

    Singh M, Muralidhar; G, Vijaya; MS, Krupashankara; Sridhara, B. K.; Shridhar, T. N.

    2016-09-01

    Nanostructured thin film metallic coatings has become an area of intense research particularly in applications related solar, sensor technologies and many other optical applications such as laser windows, mirrors and reflectors. Thin film metallic coatings were deposited using DC magnetron sputtering process. The deposition rate was varied to study its influence on optical behavior of Aluminum thin films at a different argon flow rate. Studies on the optical response of these nanostructure thin film coatings were characterized using UV-VIS-NIR spectrophotometer with integrating sphere in the wavelength range of (250-2500nm) and Surface morphology were carried out using atomic force microscope with roughness ranging from 2 to 20nm and thickness was measured using Dektak measuring instrument. The reflection behavior of aluminium coatings on polycarbonate substrates has been evaluated. UV-VIS-NIR Spectrophotometer analysis indicates higher reflectance of 96% for all the films in the wavelength range of 250 nm to 2500 nm. Nano indentation study revealed that there was a considerable change in hardness values of the films prepared at different conditions.

  5. Investigation of annealing temperature effect on magnetron sputtered cadmium sulfide thin film properties

    NASA Astrophysics Data System (ADS)

    Akbarnejad, E.; Ghorannevis, Z.; Abbasi, F.; Ghoranneviss, M.

    2016-12-01

    Cadmium sulfide (CdS) thin films are deposited on the fluorine doped tin oxide coated glass substrate using the radio frequency magnetron sputtering setup. The effects of annealing in air on the structural, morphological, and optical properties of CdS thin film are studied. Optimal annealing temperature is investigated by annealing the CdS thin film at different annealing temperatures of 300, 400, and 500 °C. Thin films of CdS are characterized by X-ray diffractometer analysis, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR spectrophotometer and four point probe. The as-grown CdS films are found to be polycrystalline in nature with a mixture of cubic and hexagonal phases. By increasing the annealing temperature to 500 °C, CdS film showed cubic phase, indicating the phase transition of CdS. It is found from physical characterizations that the heat treatment in air increased the mean grain size, the transmission, and the surface roughness of the CdS thin film, which are desired to the application in solar cells as a window layer material.

  6. Microstructure evolution with varied layer thickness in magnetron-sputtered Ni/C multilayer films

    PubMed Central

    Peng, Jichang; Li, Wenbin; Huang, Qiushi; Wang, Zhanshan

    2016-01-01

    The microstructure evolution of magnetron-sputtered Ni/C multilayers was investigated by varying the Ni and C layer thickness in the region of a few nanometers. For the samples having 2.6-nm-thick C layers, the interface width increases from 0.37 to 0.81 nm as the Ni layer thickness decreases from 4.3 to 1.3 nm. Especially for the samples with Ni layers less than 2.0 nm, the interface width changes significantly due to the discontinuously distributed Ni crystallites. For the samples having 2.8-nm-thick Ni layers, the interface width increases from 0.37 to 0.59 nm when the C layer thickness decreases from 4.3 to 0.7 nm. The evolution of interface microstructures with varied Ni and C layers is explained based on a proposed simple growth model of Ni and C layers. PMID:27515586

  7. Compositionally graded SiCu thin film anode by magnetron sputtering for lithium ion battery

    SciTech Connect

    Polat, B. D.; Eryilmaz, O. L.; Keles, O; Erdemir, A; Amine, Khalil

    2015-10-22

    Compositionally graded and non-graded composite SiCu thin films were deposited by magnetron sputtering technique on Cu disks for investigation of their potentials in lithium ion battery applications. The compositionally graded thin film electrodes with 30 at.% Cu delivered a 1400 mAh g-1 capacity with 80% Coulombic efficiency in the first cycle and still retained its capacity at around 600 mAh g-1 (with 99.9% Coulombic efficiency) even after 100 cycles. On the other hand, the non-graded thin film electrodes with 30 at.% Cu exhibited 1100 mAh g-1 as the first discharge capacity with 78% Coulombic efficiency but the cycle life of this film degraded very quickly, delivering only 250 mAh g-1 capacity after 100th cycles. Not only the Cu content but also the graded film thickness were believed to be the main contributors to the much superior performance of the compositionally graded SiCu films. We also believe that the Cu-rich region of the graded film helped reduce internal stress build-up and thus prevented film delamination during cycling. In particular, the decrease of Cu content from interface region to the top of the coating reduced the possibility of stress build-up across the film during cycling, thus leading to a high electrochemical performance.

  8. Antimicrobial brass coatings prepared on poly(ethylene terephthalate) textile by high power impulse magnetron sputtering.

    PubMed

    Chen, Ying-Hung; Wu, Guo-Wei; He, Ju-Liang

    2015-03-01

    The goal of this work is to prepare antimicrobial, corrosion-resistant and low-cost Cu65Zn35 brass film on poly(ethylene terephthalate) (PET) fabric by high-power impulse magnetron sputtering (HIPIMS), which is known to provide high-density plasma, so as to generate a strongly adherent film at a reduced substrate temperature. The results reveal that the brass film grows in a layer-plus-island mode. Independent of their deposition time, the obtained films retain a Cu/Zn elemental composition ratio of 1.86 and exhibit primarily an α copper phase structure. Oxygen plasma pre-treatment for 1min before coating can significantly increase film adhesion such that the brass-coated fabric of Grade 5 or Grade 4-5 can ultimately be obtained under dry and wet rubbing tests, respectively. However, a deposition time of 1min suffices to provide effective antimicrobial properties for both Staphylococcus aureus and Escherichia coli. As a whole, the feasibility of using such advanced HIPIMS coating technique to develop durable antimicrobial textile was demonstrated.

  9. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  10. Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

    SciTech Connect

    Stranak, Vitezslav; Herrendorf, Ann-Pierra; Drache, Steffen; Bogdanowicz, Robert; Hippler, Rainer; Cada, Martin; Hubicka, Zdenek; Tichy, Milan

    2012-11-01

    This paper reports on an investigation of the hybrid pulsed sputtering source based on the combination of electron cyclotron wave resonance (ECWR) inductively coupled plasma and high power impulse magnetron sputtering (HiPIMS) of a Ti target. The plasma source, operated in an Ar atmosphere at a very low pressure of 0.03 Pa, provides plasma where the major fraction of sputtered particles is ionized. It was found that ECWR assistance increases the electron temperature during the HiPIMS pulse. The discharge current and electron density can achieve their stable maximum 10 {mu}s after the onset of the HiPIMS pulse. Further, a high concentration of double charged Ti{sup ++} with energies of up to 160 eV was detected. All of these facts were verified experimentally by time-resolved emission spectroscopy, retarding field analyzer measurement, Langmuir probe, and energy-resolved mass spectrometry.

  11. Native target chemistry during reactive dc magnetron sputtering studied by ex-situ x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2017-07-01

    We report x-ray photoelectron spectroscopy (XPS) analysis of native Ti target surface chemistry during magnetron sputtering in an Ar/N2 atmosphere. To avoid air exposure, the target is capped immediately after sputtering with a few-nm-thick Al overlayers; hence, information about the chemical state of target elements as a function of N2 partial pressure pN2 is preserved. Contrary to previous reports, which assume stoichiometric TiN formation, we present direct evidence, based on core-level XPS spectra and TRIDYN simulations, that the target surface is covered by TiNx with x varying in a wide range, from 0.27 to 1.18, depending on pN2. This has far-reaching consequences both for modelling of the reactive sputtering process and for everyday thin film growth where detailed knowledge of the target state is crucial.

  12. The influence of discharge power and heat treatment on calcium phosphate coatings prepared by RF magnetron sputtering deposition.

    PubMed

    Yonggang, Yan; Wolke, J G C; Yubao, Li; Jansen, J A

    2007-06-01

    Ca-P coatings with different Ca/P ratio and composition were successfully prepared by RF magnetron sputtering deposition. The Ca/P ratio, phase composition, structure and morphological properties were characterized by XRD, FTIR, EDS and SEM analyses. All the as-sputtered coatings were amorphous and after IR-irradiation the coatings altered into a crystalline phase. The obtained coatings had a Ca/P ratio that varied from 0.55 to 2.10 and different phase compositions or mixtures of apatite, beta-pyrophosphate and beta-tricalciumphosphate structures were formed. Evidently, the phase compositions of the sputtered coatings are determined not only by the discharge power ratio of the hydroxylapatite and calcium pyrophosphate targets but also by the annealing temperature.

  13. Thermal stability of magneto-optical properties in TbFeCo films prepared by rf-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Xiong, Rui; Li, Zuoyi; Yang, Xiaofei; Hu, Zuoqi; Li, Zheng; Li, Gengqi

    1998-08-01

    The thermal stability of amorphous TbFeCo films covered with the protected AlN films prepared by the RF magnetron sputtering system was studied, in order to understand the degradation kinetics in rare-earth transition metal films. The changes of anisotropy Ku, Kerr rotation angle (theta) k and coercivity Hc with annealing time were measured with the automatic magnetic torque apparatus and the automatic measurement system of MO Kerr effect, respectively. Data clearly show that stress relaxation is responsible for the decrease in the magneto-optical properties after thermal annealing. Furthermore, annealing studies reveal that the thermal stability of magneto-optical properties improves with increasing Ar sputtering pressure-- a trend that is in conflict with the tendency for films sputtered under low Ar pressure to be more oxidation resistant. This trend is attributed to the large stress component that exists at low Ar pressures and its tendency to decrease as a result of annealing.

  14. Effect of magnetron sputtering parameters and stress state of W film precursors on WSe2 layer texture by rapid selenization.

    PubMed

    Li, Hongchao; Gao, Di; Xie, Senlin; Zou, Jianpeng

    2016-11-04

    Tungsten diselenide (WSe2) film was obtained by rapid selenization of magnetron sputtered tungsten (W) film. To prevent WSe2 film peeling off from the substrate during selenization, the W film was designed with a double-layer structure. The first layer was deposited at a high sputtering-gas pressure to form a loose structure, which can act as a buffer layer to release stresses caused by WSe2 growth. The second layer was deposited naturally on the first layer to react with selenium vapour in the next step. The effect of the W film deposition parameters(such as sputtering time, sputtering-gas pressure and substrate bias voltage)on the texture and surface morphology of the WSe2 film was studied. Shortening the sputtering time, increasing the sputtering-gas pressure or decreasing the substrate bias voltage can help synthesize WSe2 films with more platelets embedded vertically in the matrix. The stress state of the W film influences the WSe2 film texture. Based on the stress state of the W film, a model for growth of the WSe2 films with different textures was proposed. The insertion direction of the van der Waals gap is a key factor for the anisotropic formation of WSe2 film.

  15. Effect of magnetron sputtering parameters and stress state of W film precursors on WSe2 layer texture by rapid selenization

    PubMed Central

    Li, Hongchao; Gao, Di; Xie, Senlin; Zou, Jianpeng

    2016-01-01

    Tungsten diselenide (WSe2) film was obtained by rapid selenization of magnetron sputtered tungsten (W) film. To prevent WSe2 film peeling off from the substrate during selenization, the W film was designed with a double-layer structure. The first layer was deposited at a high sputtering-gas pressure to form a loose structure, which can act as a buffer layer to release stresses caused by WSe2 growth. The second layer was deposited naturally on the first layer to react with selenium vapour in the next step. The effect of the W film deposition parameters(such as sputtering time, sputtering-gas pressure and substrate bias voltage)on the texture and surface morphology of the WSe2 film was studied. Shortening the sputtering time, increasing the sputtering-gas pressure or decreasing the substrate bias voltage can help synthesize WSe2 films with more platelets embedded vertically in the matrix. The stress state of the W film influences the WSe2 film texture. Based on the stress state of the W film, a model for growth of the WSe2 films with different textures was proposed. The insertion direction of the van der Waals gap is a key factor for the anisotropic formation of WSe2 film. PMID:27812031

  16. Degradation and Characterization of Resorbable Phosphate-Based Glass Thin-Film Coatings Applied by Radio-Frequency Magnetron Sputtering.

    PubMed

    Stuart, Bryan W; Gimeno-Fabra, Miquel; Segal, Joel; Ahmed, Ifty; Grant, David M

    2015-12-16

    Quinternary phosphate-based glasses of up to 2.67 μm, deposited by radio-frequency magnetron sputtering, were degraded in distilled water and phosphate-buffered saline (PBS) to investigate their degradation characteristics. Magnetron-sputtered coatings have been structurally compared to their compositionally equivalent melt-quenched bulk glass counterparts. The coatings were found to have structurally variable surfaces to melt-quenched glass such that the respective bridging oxygen to nonbridging oxygen bonds were 34.2% to 65.8% versus 20.5% to 79.5%, forming metaphosphate (PO3)(-) (Q(2)) versus less soluble (P2O7)(4-) (Q(1)) and (PO4)(3-) (Q(0)), respectively. This factor led to highly soluble coatings, exhibiting a t(1/2) degradation dependence in the first 2 h in distilled water, followed by a more characteristic linear profile because the subsequent layers were less soluble. Degradation was observed to preferentially occur, forming voids characteristic of pitting corrosion, which was confirmed by the use of a focused ion beam. Coating degradation in PBS precipitated a (PO3)(-) metaphosphate, an X-ray amorphous layer, which remained adherent to the substrate and seemingly formed a protective diffusion barrier, which inhibited further coating degradation. The implications are that while compositionally similar, sputter-deposited coatings and melt-quenched glasses are structurally dissimilar, most notably, with regard to the surface layer. This factor has been attributed to surface etching of the as-deposited coating layer during deposition and variation in the thermal history between the processes of magnetron sputtering and melt quenching.

  17. Solid oxide fuel cell anode surface modification by magnetron sputtering of NiO/YSZ thin film

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Smolyanskiy, E. A.; Lauk, A. L.; Kovalchuk, A. N.; Remnev, G. E.; Lebedynskiy, A. M.

    2017-05-01

    NiO/ZrO2-Y2O3 (NiO/YSZ) anode functional layers (AFL) with 16-60 vol.% of NiO were deposited onto NiO/YSZ anode substrates by magnetron sputtering, followed by annealing in air at 1200 °C. The optimal deposition conditions for NiO/YSZ were determined. NiO content in the films was varied by changing the oxygen flow rate during the sputtering process. The microstructure and phase composition of NiO/YSZ anode functional layer were studied by SEM and XRD methods. Anode functional layers were fully crystallized and comprised of grains up to 500 nm in diameter after reduction in hydrogen. Anode-supported solid oxide fuel cells (SOFC) with the diameter of 20 mm including the magnetron sputtered AFL, 4-microns thick YSZ electrolyte and La0.6Sr0.4Co0.2Fe0.8O3/Ce0.9Gd0.1O2 (LSCF/CGO) cathode were fabricated and tested. Electrochemical properties of the single fuel cells were investigated as a function of NiO volume content in AFL and AFL thickness.

  18. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

    SciTech Connect

    Kossoy, Anna E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.; Leosson, Kristjan; Olafsson, Sveinn

    2015-03-15

    The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.

  19. Time dependence of carbon film deposition on SnO{sub 2}/Si using DC unbalanced magnetron sputtering

    SciTech Connect

    Alfiadi, H. Aji, A. S. Darma, Y.

    2014-02-24

    Carbon deposition on SnO{sub 2} layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO{sub 2} thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O{sub 2} at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of SnO{sub 2}/Si structure and carbon thin film on SnO{sub 2} is characterized using SEM, EDAX, XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO{sub 2}. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.

  20. DC reactive magnetron sputtering, annealing, and characterization of CuAlO{sub 2} thin films

    SciTech Connect

    Stevens, Blake L.; Hoel, Cathleen A.; Swanborg, Carolyn; Tang Yang; Zhou Chuanle; Grayson, Matthew; Poeppelmeier, Kenneth R.; Barnett, Scott A.

    2011-01-15

    CuAlO{sub x} thin films were prepared at three substrate temperatures (T{sub S}=60, 300, and 600 deg. C) and two oxygen partial pressures (P{sub O{sub 2}}=0.5 and 2 mTorr) via dc reactive magnetron sputtering from Cu-Al 50-50 at. % alloy targets and subsequent annealing. As-deposited films with P{sub O{sub 2}}=0.5 mTorr were oxygen deficient; although the delafossite structure formed upon annealing, electrical properties were poor. Films deposited with P{sub O{sub 2}}=2 mTorr transformed into the delafossite structure and exhibited p-type conductivity after annealing under N{sub 2} at temperatures T{sub A}{>=}750 deg. C. Conductivity generally increased with increasing T{sub S} and decreasing T{sub A}. A special case of P{sub O{sub 2}}=2 mTorr and low T{sub S} (60 deg. C) resulted in a partially crystalline oxide phase that transformed into the delafossite structure at T{sub A}=700 deg. C and yielded the highest conductivity of 1.8 S cm{sup -1}. In general, a T{sub A} near the phase formation boundary led to an increase in conductivity. Low-temperature hydrothermal annealing was also investigated and shown to produce mixed phase films exhibiting the delafossite structure along with CuO, AlOOH, and Al{sub 2}O{sub 3}.

  1. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings.

    PubMed

    Obrosov, Aleksei; Gulyaev, Roman; Zak, Andrzej; Ratzke, Markus; Naveed, Muhammad; Dudzinski, Wlodzimierz; Weiß, Sabine

    2017-02-10

    MAX phases (M = transition metal, A = A-group element, and X = C/N) are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100) and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), and nanoindentation. Transmission Electron Microscopy (TEM) was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6-0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm) and granular size (76 nm) combined with the highest hardness (15.9 GPa). The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  2. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    PubMed Central

    Obrosov, Aleksei; Gulyaev, Roman; Zak, Andrzej; Ratzke, Markus; Naveed, Muhammad; Dudzinski, Wlodzimierz; Weiß, Sabine

    2017-01-01

    MAX phases (M = transition metal, A = A-group element, and X = C/N) are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100) and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), and nanoindentation. Transmission Electron Microscopy (TEM) was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm) and granular size (76 nm) combined with the highest hardness (15.9 GPa). The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films. PMID:28772516

  3. Stress anisotropy and stress gradient in magnetron sputtered films with different deposition geometries

    SciTech Connect

    Zhao, Z.B.; Yalisove, S.M.; Bilello, J.C.

    2006-03-15

    Mo films were deposited via magnetron sputtering with two different deposition geometries: dynamic deposition (moving substrate) and static deposition (fixed substrate). The residual stress and structural morphologies of these films were investigated, with particular focus on in-plane anisotropy of the biaxial stress and stress gradient across the film thickness. The results revealed that the Mo films developed distinct states of residual stress, which depended on both deposition geometry and film thickness. With the dynamic geometry, the Mo films generally exhibited anisotropic stress. Both the degree of anisotropy and the magnitude of stress varied as functions of film thickness. The variation of stress was linked to the evolution of anisotropic microstructures in the films. The Mo films from the static geometry developed isotropic residual stress, which was more compressive and noticeably larger in magnitude than that of the Mo films from the dynamic geometry. Aside from these disparities, the two types of Mo films (i.e., anisotropic and isotropic) exhibited notably similar trends of stress variation with film thickness. Depth profiling indicated the presence of large stress gradients for the Mo films, irrespective of the deposition geometries. This observation seems to be consistent with the premise that Mo films develop a zone T structure, which is inherently inhomogeneous along the film thickness. Moreover, the largest stress gradient for both types of deposition geometries arises at roughly the same film depth ({approx}240 nm from substrate), where the stresses sharply transits from highly compressive to less compressive or even tensile. This appears to correspond to the boundary region that separates two distinct stages of microstructural evolution, a feature unique to zone T-type structure.

  4. Influence of the composition of BCN films deposited by reactive magnetron sputtering on their properties.

    PubMed

    Martínez, C; Kyrsta, S; Cremer, R; Neuschütz, D

    2002-10-01

    Compounds of the B--C--N system are very promising to produce superhard coatings with good tribological, chemical, and thermal properties. To investigate the influence of the composition of BCN films on their properties, films with five different compositions at nearly constant nitrogen content were deposited on silicon wafers by magnetron sputtering from hexagonal boron nitride and graphite targets operated in RF and DC mode, respectively. The compositions and binding states of the films were determined by XPS. The nitrogen content was found to be almost constant for all films at about a 40 at-%, whereas boron and carbon compositions ranged between 15-35 and 25-50 at-%, respectively. The electronic and bonding structure of the coatings were analyzed by REELS using three different electron beam energies to obtain information at different depths. An increase of the carbon content of the films resulted in a significant shift of the pi-pi* interband transition with respect to the energy loss corresponding to h-BN. The absence of the pi-pi* transition in the energy loss spectra acquired at a beam energy of 1900 eV indicates the existence of a very thin overlayer mostly sp(2) bonded and probably with a distorted hexagonal structure. The position of the bulk plasmon losses corresponded to the hexagonal phase for the overlayer and presented a shift of more than 1.5 eV to the higher energy loss direction for the spectra obtained at 1900 eV beam energy. This shift and the absence of the sp(2)-bond fingerprint induced the possibility of an underlying disordered structure with a majority of sp(3) bonds.

  5. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-28

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  6. Physical properties of rf magnetron sputter deposited NiO:WO3 thin films

    NASA Astrophysics Data System (ADS)

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.; Ichimura, M.

    2015-01-01

    The present study describes various physical properties of mixed nickel-tungsten oxide (NiO:WO3) (95:5) thin films prepared on glass substrate by rf magnetron sputtering due to the variation in rf power (100, 150, and 200 W). X-ray diffraction study shows that all the deposited films are amorphous in nature. The maximum transmittance of 97% in the infrared region was observed for the film deposited at 100 W rf power. A systematic reduction in the optical band gap is observed with increasing rf power, which is associated with the rf power induced effect leading to the production of localized states near the band edges of NiO:WO3. The Urbach energy (EU) value was found to increase with rf power, which may be due to the increased defects in the NiO matrix. From the optical study, we have evaluated various parameters such as refractive index, packing density, lattice dielectric constant, ratio between free carrier density and free carrier effective mass, plasma frequency, and dispersion energy parameters, etc. These results are discussed and correlated well with the light of possible mechanisms underlying the phenomena. The compositional purity of the film was confirmed by energy dispersive x-ray analysis (EDAX) and Auger electron spectroscopic (AES) measurements. The Raman spectra of NiO:WO3 films show two peaks corresponding to one-phonon LO mode at 560 cm-1 and two-phonon LO mode at 1100 cm-1 due to the vibrations of Ni-O bonds and a strong peak at 860 cm-1 corresponds to the stretching vibration of W-O pair in the WO6 group. The band edge emission at 369 nm was observed in photoluminescence spectra.

  7. Characterization and in vitro evaluation of biphasic calcium pyrophosphate-tricalciumphosphate radio frequency magnetron sputter coatings.

    PubMed

    Takahashi, K; van den Beucken, J J J P; Wolke, J G C; Hayakawa, T; Nishiyama, N; Jansen, J A

    2008-03-01

    The objective of this study was to characterize the physicochemical, dissolution, and osteogenic properties of radio frequency magnetron sputtered dicalcium pyrophosphate/tricalciumphosphate (Pyro/TCP) and hydroxylapatite (HA) coatings. Therefore Pyro/TCP and HA coatings were deposited on grit-blasted titanium discs. The results showed that the deposited coatings were amorphous and changed into a crystalline structure after IR heat-treatment of 550 degrees C for HA and 650 degrees C for Pyro/TCP. Heat-treated HA coatings appeared to be stable during immersion in simulated body fluid (SBF), that is no changes in the XRD pattern were observed. Also, no dissolution of the coating was observed by scanning electron microscopy (SEM). Energy dispersive spectroscopy (EDS) revealed that the Ca/P ratio of the HA coatings remained constant during SBF immersion. On the other hand, the heat-treated Pyro/TCP coatings showed a surface reaction of calcium pyrophosphate into a beta-tricalcium phosphate phase during SBF immersion. This was confirmed by EDS analysis. Rat bone marrow-derived osteoblast-like cells cultured on the heat-treated substrates showed that cell proliferation and differentiation occurred on both types of bioceramic coatings. No significant differences for proliferation and early differentiation were observed between cells cultured on heat-treated Pyro/TCP and HA at individual time points. However, osteocalcin expression, a late marker for osteoblast-like cell differentiation, was significantly increased after 12 days of culture on HA-coatings. These results were confirmed by SEM observations and suggest increased osteogenic properties for HA-coatings over Pyro/TCP-coatings. Additional research is necessary to obtain conclusive evidence on the in vivo osteogenic capacity of Pyro/TCP coatings.

  8. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  9. Properties of Cr2AlC MAX phase thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Buck, Zachary; Donato, Tyler; Rotella, Christopher; Lunk, Carl; Lofland, S. E.; Hettinger, J. D.

    2012-02-01

    Mn+ 1AXn (MAX) phases, where n is 1, 2, and 3, M is an early transition metal, A is an A-group element, and X is either C or N, are ternary carbides with unique properties such as low density, easy machinability, and good oxidation resistance. The MAX phase Cr2AlC is of particular interest for industrial applications to its excellent high-temperature oxidation resistance and relatively low synthesis temperature. We prepared Cr2AlC thin films on c-axis oriented single crystal Al2O3, glassy carbon and Si thermal oxide substrates using reactive magnetron sputtering as precursor materials for carbide-derived carbon (CDC) films for ``on-chip'' supercapacitors. Film deposition was optimized using elemental composition data obtained by WDXRF. Optimized films were characterized using XRD and scanning electron microscopy. It was found that textured Cr2AlC films only form when the composition was Al-rich allowing the formation of a Cr5Al8 interfacial layer. As film composition was optimized, the interfacial layer did not form but the XRD peaks associated with the Cr2AlC also decreased in magnitude. Extremely high-textured films were grown when a thin buffer layer of CrAl2 was deposited on the substrate before depositing the Cr2AlC films. This result suggests that Cr2AlC films may not be ideal for CDC applications since the films may ``lift-off'' during conversion due to the existence of the naturally occurring buffer-layer.

  10. Interface phenomena in magnetron sputtered Cu2O/ZnO heterostructures.

    PubMed

    Jensen, I J T; Gorantla, S; Løvvik, O M; Gan, J; Nguyen, P D; Monakhov, E; Svensson, B G; Gunnæs, A E; Diplas, S

    2017-08-22

    The interface between ZnO and Cu2O has been predicted to be a good candidate for use in thin film solar cells. However, the high predicted conversion efficiency has yet to be fully realized experimentally. To explore the underlying causes of this we investigate the interface between ZnO and Cu2O in magnetron sputtered samples. Two different sample geometries were made: In the first set thin layers of ZnO were deposited on Cu2O (type A), while in the second set the order was reversed (type B). Using x-ray photoelectron spectroscopy (XPS), an intermediate CuO layer was identified regardless of the order in which the Cu2O and ZnO layers were deposited. The presence of a CuO layer was supported by transmission electron microscopy (TEM) results. Changes in the electron hole screening conditions were observed in CuO near the interface with ZnO, manifested as changes in the relative peak-to-satellite ratio and the degree of asymmetric broadness in the Cu 2p peak. The suppression of the Cu 2p satellite characteristic of CuO may cause the CuO presence to be overlooked and cause errors in determinations of valence band offsets (VBOs). For the type A samples, we compare four different approaches to XPS-based determination of VBO and find that the most reliable results are obtained when the thin CuO layer and the altered screening conditions at the interface were taken into account. The VBOs were found to range between 2.5 eV and 2.8 eV. For the B type samples a reduction of the Cu 2p-LMM Auger parameter was found as compared to bulk Cu2O, indicative of quantum confinement in the Cu2O overlayer.

  11. Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

    SciTech Connect

    Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S.; Sivakumar, R.

    2016-05-06

    Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  12. A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements

    SciTech Connect

    Arnalds, U. B.; Agustsson, J. S.; Ingason, A. S.; Eriksson, A. K.; Gylfason, K. B.; Gudmundsson, J. T.; Olafsson, S.

    2007-10-15

    We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks.

  13. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    SciTech Connect

    Kunj, Saurabh Sreenivas, K.

    2016-05-23

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  14. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    SciTech Connect

    Panda, Padmalochan; Ramaseshan, R. Dash, S.; Krishna, Nanda Gopala

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  15. Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering

    SciTech Connect

    Shantheyanda, B. P.; Todi, V. O.; Sundaram, K. B.; Vijayakumar, A.; Oladeji, I.

    2011-09-15

    Aluminum doped zinc oxide (AZO) thin films were obtained by RF magnetron sputtering. The effects of deposition parameters such as power, gas flow conditions, and substrate heating have been studied. Deposited and annealed films were characterized for composition as well as microstructure using x ray photoelectron spectroscopy and x ray diffraction. Films produced were polycrystalline in nature. Surface imaging and roughness studies were carried out using SEM and AFM, respectively. Columnar grain growth was predominantly observed. Optical and electrical properties were evaluated for transparent conducting oxide applications. Processing conditions were optimized to obtain highly transparent AZO films with a low resistivity value of 6.67 x 10{sup -4}{Omega} cm.

  16. Structural disordering studies of Cu6PS5I-based thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Studenyak, Ihor; Rybak, Stefan; Bendak, Andrii; Izai, Vitalii; Guranich, Pavlo; Kúš, Peter; Mikula, Marian

    2016-12-01

    Cu6PS5I-based thin films were deposited onto silicate glass substrates by magnetron sputtering. With Cu content increase, a red shift of the optical transmission spectra as well as increase of the total electric conductivity are observed. A typical Urbach bundle are revealed, the temperature behaviour of the Urbach absorption edge in thin films are explained by strong electron-phonon interaction. Temperature dependences of the absorption edge energy position and the Urbach energy for thin film are well described in Einstein model. The influence of different type of disordering on the Urbach tail is studied.

  17. Rietveld-refinement and optical study of the Fe doped ZnO thin film by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kumar, Arun; Dhiman, Pooja; Singh, M.

    2017-05-01

    Fe Doped ZnO Dilute Magnetic Semiconductor thin film prepared by RF magnetron sputtering on glass substrate and Influence of 3% Fe-doping on structural and Optical properties has been studied. The Rietveld-refinement analysis shows that Fe doping has a significant effect on crystalline structure, grain size and strain in the thin film. Two dimensional and three-dimensional atom probe tomography of the thin film shows that Fe ions are randomly distributed which is supported by Xray Diffraction (XRD). Fe-doping is found to effectively modify the band gap energy up to 3.5 eV.

  18. RF magnetron sputtering deposition of NiO/Ni bilayer and approach of the Magnetic behavior using the Preisach model

    NASA Astrophysics Data System (ADS)

    Bendjerad, A.; Boukhtache, S.; Benhaya, A.; Lahmar, A.; Zergoug, M.; Luneau, D.

    2017-04-01

    Bilayer of nickel and nickel oxide were deposited on glass substrates using RF magnetron sputtering technique. The magnetic properties of the prepared thin films were carried out at room temperature in both parallel and perpendicular magnetic field to the sample. The Preisach model was applied to provide a mathematical model of the magnetic hysteresis loop in the case of parallel geometry, along the easy axis of the bi-layer NiO / Ni. Good agreement was obtained between the theoretical and experimental results.

  19. Effect of the lead oxide content on the microstructure and properties of PZT films obtained by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mukhin, N. V.; Chigirev, D. A.

    2017-07-01

    Experimental studies of the influence of lead oxide as well as temperature and time of heat treatment on the microstructure and ferroelectric properties of PZT films obtained by the high-frequency magnetron sputtering method were carried out. It is shown that the change in the ferroelectric properties of polycrystalline PZT films can be explained by their heterophase structure with inclusions of lead oxide. It was found that the presence of a sublayer of lead oxide leads to a self-polarization of the film of the PZT. During the formation of the perovskite structure, the diffusion of lead oxide to the surface of the film occurs more intensively than after its formation.

  20. Evolution of the plasma composition of a high power impulse magnetron sputtering system studied with a time-of-flight spectrometer

    SciTech Connect

    Oks, Efim; Anders, Andre

    2008-12-31

    The plasma of a high power impulse magnetron sputtering (HiPIMS) system has been investigated using a time-of-flight (TOF) spectrometer. The target materials included high sputter yield materials (Cu, Ag), transition metals (Nb, Cr, Ti), and carbon (graphite); the sputtering gases were argon, krypton and nitrogen, and two different target thicknesses were selected to consider the role of the magnetic field strength. Measurements for selected combinations of those parameters give quantitative information on the transition from gas-dominated to metal-dominated (self-sputtering) plasma, on the fractions of ion charge states, and in the case of molecular gases, on the fraction of atomic and molecular ions.

  1. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al+ ion beam

    NASA Astrophysics Data System (ADS)

    Weichsel, T.; Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Philipp, A.

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al+ ion current with a density of 167 μA/cm2 is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 109 cm-3 to 6 × 1010 cm-3 and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  2. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al⁺ ion beam.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Philipp, A

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology-a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al(+) ion current with a density of 167 μA/cm(2) is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10(9) cm(-3) to 6 × 10(10) cm(-3) and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  3. Structural and optical characterization of terbium doped ZnGa2O4 thin films deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Somasundaram, K.; Girija, K. G.; Sudarsan, V.; Selvin, P. Christopher; Vatsa, R. K.

    2016-05-01

    Tb3+ doped ZnGa2O4 nanophosphor (21 nm) has been synthesized via low temperature polyol route and subsequently thin films of the same were deposited on glass and ITO substrates by RF magnetron sputtering. The films were characterized by X-ray Diffraction and luminescence measurements. The XRD pattern showed that Tb3+ doped ZnGa2O4 nanophosphor has a cubic spinel phase. Luminescence behavior of the nanophosphor and as deposited sputtered film was investigated. The PL emission spectra of nanophosphor gave a broad ZnGa2O4 host emission band along with a strong terbium emission and the thin films showed only broad host emission band and there was no terbium ion emission.

  4. Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

    PubMed

    Eom, Ji Mi; Oh, Hyun Gon; Cho, Il Hwan; Kwon, Sang Jik; Cho, Eou Sik

    2013-11-01

    Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics.

  5. Indium tin oxide films deposited by thermionic-enhanced DC magnetron sputtering on unheated polyethylene terephthalate polymer substrate

    SciTech Connect

    Lan, Y.F.; Peng, W.C.; Lo, Y.H.; He, J.L.

    2009-08-05

    Indium tin oxide thin films were deposited onto polyethylene terephthalate substrates via thermionic enhanced DC magnetron sputtering at low substrate temperatures. The structural, optical and electrical properties of these films are methodically investigated. The results show that compared with traditional sputtering, the films deposited with thermionic emission exhibit higher crystallinity, and their optical and electrical properties are also improved. Indium tin oxide films deposited by utilizing thermionic emission exhibit an average visible transmittance of 80% and an electrical resistivity of 4.5 x 10{sup -4} {Omega} cm, while films made without thermionic emission present an average visible transmittance of 74% and an electrical resistivity of 1.7 x 10{sup -3} {Omega} cm.

  6. Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

    SciTech Connect

    Malau, Viktor Ilman, Mochammad Noer Iswanto, Priyo Tri Jatisukamto, Gaguk

    2016-03-29

    Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

  7. Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

    NASA Astrophysics Data System (ADS)

    Malau, Viktor; Ilman, Mochammad Noer; Iswanto, Priyo Tri; Jatisukamto, Gaguk

    2016-03-01

    Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10-2 torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10-6 mbar, a fluence of 2 x 1017 ions/cm2, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

  8. Orthogonal optimization for room temperature magnetron sputtering of ZnO:Al films for all-solid electrochromic devices

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Diao, Xungang; Ding, Peng

    2011-02-01

    In order to obtain competent and quality (high transparency, conductivity and stability) aluminium-doped zinc oxide (ZnO:Al, ZAO) films for all solid electrochromic devices, ZAO films were prepared by direct current (D.C.) reactive magnetron sputtering at room temperature based on orthogonal design. Optical and electrical property dependences of the films on the four dominant sputtering parameters: sputtering time, target-substrate distance, sputtering power and O2 flow ratio were simultaneously investigated with measured results using mathematical and statistical method. Optimal Parameters to fabricate ZAO films with optimum comprehensive performances were obtained ultimately. Resistivity and carrier concentration of ZAO film deposited with optimized parameters were 3.89 × 10-4 Ω cm and 1.09 × 1021 cm-3, respectively. ZAO films with these superior properties were employed as transparent electrodes eventually in a WO3 based all-solid electrochromic device which displayed good electrochromic performance. The regulation range for transmittance in the visible region of the device was more than 50%, which was comparable to that of the device adopting indium tin oxide (ITO) films as electrodes.

  9. Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

    2011-04-01

    Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4}. The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 {mu}m, a saturation magnetization of 150 emu/cm{sup 3}, and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

  10. Structural and optical properties of gold-incorporated diamond-like carbon thin films deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Majeed, Shahbaz; Siraj, K.; Naseem, S.; Khan, Muhammad F.; Irshad, M.; Faiz, H.; Mahmood, A.

    2017-07-01

    Pure and gold-doped diamond-like carbon (Au-DLC) thin films are deposited at room temperature by using RF magnetron sputtering in an argon gas-filled chamber with a constant flow rate of 100 sccm and sputtering time of 30 min for all DLC thin films. Single-crystal silicon (1 0 0) substrates are used for the deposition of pristine and Au-DLC thin films. Graphite (99.99%) and gold (99.99%) are used as co-sputtering targets in the sputtering chamber. The optical properties and structure of Au-DLC thin films are studied with the variation of gold concentration from 1%-5%. Raman spectroscopy, atomic force microscopy (AFM), Vickers hardness measurement (VHM), and spectroscopic ellipsometry are used to analyze these thin films. Raman spectroscopy indicates increased graphitic behavior and reduction in the internal stresses of Au-DLC thin films as the function of increasing gold doping. AFM is used for surface topography, which shows that spherical-like particles are formed on the surface, which agglomerate and form larger clusters on the surface by increasing the gold content. Spectroscopy ellipsometry analysis elucidates that the refractive index and extinction coefficient are inversely related and the optical bandgap energy is decreased with increasing gold content. VHM shows that gold doping reduces the hardness of thin films, which is attributed to the increase in sp2-hybridization.

  11. Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

    SciTech Connect

    Ni, Chih-Jui; Chau-Nan Hong, Franklin

    2014-05-15

    Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

  12. Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering.

    PubMed

    Hussain, Sajjad; Shehzad, Muhammad Arslan; Vikraman, Dhanasekaran; Khan, Muhammad Farooq; Singh, Jai; Choi, Dong-Chul; Seo, Yongho; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

    2016-02-21

    In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ∼21 cm(2) V(-1) s(-1) (bilayer) and ∼25 cm(2) V(-1) s(-1) (trilayer), on/off ratios in the range of ∼10(7) (bilayer) and 10(4)-10(5) (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications.

  13. Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering

    SciTech Connect

    Oezer, D.; Sanjines, R.; Ramirez, G.; Rodil, S. E.

    2012-12-01

    The electrical and optical properties of Ta{sub x}Si{sub y}N{sub z} thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-Ta{sub x}Si{sub y}N{sub z} thin films were prepared: sub-stoichiometric Ta{sub x}Si{sub y}N{sub 0.44}, nearly stoichiometric Ta{sub x}Si{sub y}N{sub 0.5}, and over-stoichiometric Ta{sub x}Si{sub y}N{sub 0.56}. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the Ta{sub x}Si{sub y}N{sub z} films due to variations in the stoichiometry of the fcc-TaN{sub z} system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-Ta{sub x}Si{sub y}N{sub z} films can exhibit room temperature resistivity values ranging from 10{sup 2} {mu}{Omega} cm to about 6 Multiplication-Sign 10{sup 4} {mu}{Omega} cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the Ta{sub x}Si{sub y}N{sub z} thin films provides a pertinent and

  14. Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

    SciTech Connect

    Mei, A. B.; Zhang, C.; Sardela, M.; Eckstein, J. N.; Rockett, A.; Howe, B. M.; Hultman, L.; Petrov, I.; Greene, J. E.

    2013-11-15

    Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 °C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001){sub ZrN}‖(001){sub MgO} and [100]{sub ZrN}‖[100]{sub MgO}. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity ρ{sub 300K} of 12.0 μΩ-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6 × 10{sup −8}Ω-cm K{sup −1}, a residual resistivity ρ{sub o} below 30 K of 0.78 μΩ-cm (corresponding to a residual resistivity ratio ρ{sub 300Κ}/ρ{sub 15K} = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, ξ{sub ‖} = 18 nm and ξ{sub ⊥} = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 ± 1.7 and 450 ± 25 GPa.

  15. In vitro biocompatibility of Ti-Mg alloys fabricated by direct current magnetron sputtering.

    PubMed

    Hieda, Junko; Niinomi, Mitsuo; Nakai, Masaaki; Cho, Ken

    2015-09-01

    Ti-xMg (x=17, 33, and 55 mass%) alloy films, which cannot be prepared by conventional melting processes owing to the absence of a solid-solution phase in the phase diagram, were prepared by direct current magnetron sputtering in order to investigate their biocompatibility. Ti and Mg films were also prepared by the same process for comparison. The crystal structures were examined by X-ray diffraction (XRD) analysis and the surfaces were analyzed by X-ray photoelectron spectroscopy. The Ti, Ti-xMg alloy, and Mg films were immersed in a 0.9% NaCl solution at 310 K for 7d to evaluate the dissolution amounts of Ti and Mg. In addition, to evaluate the formation ability of calcium phosphate in vitro, the Ti, Ti-xMg alloy, and Mg films were immersed in Hanks' solution at 310 K for 30 d. Ti and Mg form solid-solution alloys because the peaks attributed to pure Ti and Mg do not appear in the XRD patterns of any of the Ti-xMg alloy films. The surfaces of the Ti-17 Mg alloy and Ti-33 Mg alloy films contain Ti oxides and MgO, whereas MgO is the main component of the surface oxide of the Ti-55 Mg alloy and Mg films. The dissolution amounts of Ti from all films are below or near the detection limit of inductively coupled plasma-optical emission spectroscopy. On the other hand, the Ti-17 Mg alloy, Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films exhibit Mg dissolution amounts of approximately 2.5, 1.4, 21, and 41 μg/cm(2), respectively. The diffraction peaks attributed to calcium phosphate are present in the XRD patterns of the Ti-33 Mg alloy, Ti-55 Mg alloy, and Mg films after the immersion in Hanks' solution. Spherical calcium phosphate particles precipitate on the surface of the Ti-33 Mg film. However, many cracks are observed in the Ti-55 Mg film, and delamination of the film occurs after the immersion in Hanks' solution. The Mg film is dissolved in Hanks' solution and calcium phosphate particles precipitate on the glass substrate. Consequently, it is revealed that the Ti-33 Mg

  16. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    SciTech Connect

    Jagannadham, Kasichainula

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  17. Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters

    NASA Astrophysics Data System (ADS)

    Cristea, D.; Pătru, M.; Crisan, A.; Munteanu, D.; Crăciun, D.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Moura, C.; Cunha, L.

    2015-12-01

    Tantalum oxynitride thin films were produced by magnetron sputtering. The films were deposited using a pure Ta target and a working atmosphere with a constant N2/O2 ratio. The choice of this constant ratio limits the study concerning the influence of each reactive gas, but allows a deeper understanding of the aspects related to the affinity of Ta to the non-metallic elements and it is economically advantageous. This work begins by analysing the data obtained directly from the film deposition stage, followed by the analysis of the morphology, composition and structure. For a better understanding regarding the influence of the deposition parameters, the analyses are presented by using the following criterion: the films were divided into two sets, one of them produced with grounded substrate holder and the other with a polarization of -50 V. Each one of these sets was produced with different partial pressure of the reactive gases P(N2 + O2). All the films exhibited a O/N ratio higher than the N/O ratio in the deposition chamber atmosphere. In the case of the films produced with grounded substrate holder, a strong increase of the O content is observed, associated to the strong decrease of the N content, when P(N2 + O2) is higher than 0.13 Pa. The higher Ta affinity for O strongly influences the structural evolution of the films. Grazing incidence X-ray diffraction showed that the lower partial pressure films were crystalline, while X-ray reflectivity studies found out that the density of the films depended on the deposition conditions: the higher the gas pressure, the lower the density. Firstly, a dominant β-Ta structure is observed, for low P(N2 + O2); secondly a fcc-Ta(N,O) structure, for intermediate P(N2 + O2); thirdly, the films are amorphous for the highest partial pressures. The comparison of the characteristics of both sets of produced TaNxOy films are explained, with detail, in the text.

  18. BiVO{sub 4} photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

    SciTech Connect

    Gong, Haibo; Freudenberg, Norman; Nie, Man; Krol, Roel van de; Ellmer, Klaus

    2016-04-15

    Photoactive bismuth vanadate (BiVO{sub 4}) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO{sub 4} films were investigated. Phase-pure monoclinic BiVO{sub 4} films, which are more photoactive than the tetragonal BiVO{sub 4} phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO{sub 4} films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO{sub 4} film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger) exceeded 1.2 mA/cm{sup 2} at a potential of 1.23 V{sub RHE} under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO{sub 4} films opens new possibilities for the fabrication of large-scale devices for water splitting.

  19. BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Gong, Haibo; Freudenberg, Norman; Nie, Man; van de Krol, Roel; Ellmer, Klaus

    2016-04-01

    Photoactive bismuth vanadate (BiVO4) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO4 films were investigated. Phase-pure monoclinic BiVO4 films, which are more photoactive than the tetragonal BiVO4 phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO4 films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO4 film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger) exceeded 1.2 mA/cm2 at a potential of 1.23 VRHE under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO4 films opens new possibilities for the fabrication of large-scale devices for water splitting.

  20. In vitro enhancement of SAOS-2 cell calcified matrix deposition onto radio frequency magnetron sputtered bioglass-coated titanium scaffolds.

    PubMed

    Saino, Enrica; Maliardi, Valentina; Quartarone, Eliana; Fassina, Lorenzo; Benedetti, Laura; De Angelis, Maria Gabriella Cusella; Mustarelli, Piercarlo; Facchini, Alessandro; Visai, Livia

    2010-03-01

    In bone tissue engineering, bioglass coating of titanium (Ti) scaffolds has drawn attention as a method to improve osteointegration and implant fixation. In this in vitro study, bioactive glass layers with an approximate thickness of 1 microm were deposited at 200 degrees C onto a three-dimensional Ti-6Al-4V scaffold using a radio frequency (r.f.) magnetron sputtering system. After incubation with SAOS-2 human osteoblasts, in comparison with the uncoated scaffolds, the bioglass-coated scaffolds showed a twofold increase in cell proliferation (p < 0.05) up to 68.4 x 10(6), and enhanced the deposition of extracellular matrix components such as decorin, fibronectin, osteocalcin, osteonectin, osteopontin, and type-I and -III collagens (p < 0.05). Calcium deposition was twofold greater on the bioglass-coated scaffolds (p < 0.05). The immunofluorescence related to the preceding bone matrix proteins and calcium showed their colocalization to the cell-rich areas. Alkaline phosphatase activity increased twofold (p < 0.001) and its protein content was threefold higher with respect to the uncoated sample. Quantitative reverse transcriptase-polymerase chain reaction analysis revealed upregulated transcription specific for type-I collagen and osteopontin (p < 0.001). All together, these results demonstrate that the bioglass coating of the three-dimensional Ti scaffolds by the r.f. magnetron sputtering technique determines an in vitro increase of the bone matrix elaboration and may potentially have a clinical benefit.

  1. Pressure-dependent Transition from Atoms to Nanoparticles in Magnetron Sputtering: Effect on WSi2 Film Roughness and Stress

    SciTech Connect

    Zhou, L.; Wang, Y; Zhou, H; Li, M; Headrick, R; MacArthur, K; Shi, B; Conley, R; Macrander, A

    2010-01-01

    We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi{sub 2}, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small-angle x-ray scattering. The results show an abrupt transition at an Ar background pressure P{sub c}; the transition is associated with the threshold for energetic particle thermalization, which is known to scale as the product of the Ar pressure and the working distance between the magnetron source and the substrate surface. Below P{sub c} smooth films are produced while above P{sub c} roughness increases abruptly, consistent with a model in which particles aggregate in the deposition flux before reaching the growth surface. The results from WSi{sub 2} films are correlated with in situ measurement of stress in WSi{sub 2}/Si multilayers, which exhibits a corresponding transition from compressive to tensile stress at P{sub c}. The tensile stress is attributed to coalescence of nanoparticles and the elimination of nanovoids.

  2. Interface structure and corrosion resistance of Ti/Cr nanomultilayer film prepared by magnetron sputtering on depleted uranium.

    PubMed

    Zhu, Shengfa; Wu, Yanping; Liu, Tianwei; Tang, Kai; Wei, Qiang

    2013-07-24

    Uranium has broadened utility in military and civilization; however, it is extremely apt to oxidation corrosion. Ti/Cr nanomultilayer film was prepared by unbalanced magnetron sputtering on the surface of depleted uranium (DU) to improve its corrosion resistance. The SEM morphologies show that Ti/Cr multilayer film has fine grain and high density. The Auger electron spectroscopy is used to investigate the depth profiles of Ti, U, and O elements of interface between DU substrate and the Ti interlayer, and indicates that the mutual diffusion area of U and Ti is formed at the interface. The TEM cross-section microstructure shows that the multilayer film has alternative Ti and Cr layers and form a perfect modulation structure. The modulation period is measured to be 4.8 nm in TEM morphology, the thickness ratio of Ti to Cr could be estimated to be about 1:2. Potentiodynamic polarization curves show that, after depositing Ti/Cr nanomultilayer film, the corrosion potential increases while the corrosion current density decreases obviously. The surface of Ti/Cr nanomultilayer film exhibits a pseudo passivation behavior when the polarization potential increased from -50 to 400 mV. It was indicated that, after depositing Ti/Cr nanomultilayer film by unbalanced magnetron sputtering, the corrosion resistance of DU was effectively improved.

  3. Synthesis, transport, and retention of tin nanodroplets in a magnetron sputtering source combined with a capacitively-coupled plasma

    NASA Astrophysics Data System (ADS)

    Sasaki, K.; Takanari, K.

    2016-09-01

    The intention of this work was the development of a method for coating metal nanodroplets with thin films having high melting temperatures. To realize this process technology, we combined a magnetron sputtering plasma for synthesizing metal nanoparticles with a capacitively-coupled plasma (CCP) for retaining and heating synthesized nanoparticles. The magnetron sputtering source with a tin target was operated at a high pressure of 400 mTorr. The high pressure induced the condensation of tin atoms in the gas phase, resulting in the formation of tin nanoparticles. The nanoparticles were transported downward, and were trapped in the sheath electric field near the planar electrode for the CCP discharge. The formation, the transport, and the retention of nanoparticles were monitored by laser light scattering. Collected tin nanoparticles did not have agglomerated shapes, suggesting that tin nanoparticles were melted when they were stored in the CCP discharge. The surfaces of tin nanoparticles were oxidized. When we introduced methane before the collection, we observed core-shell nanoparticles without oxidization. Tin nanoparticles were coated with amorphous carbon films by plasma-enhanced chemical vapor deposition of methane.

  4. Influence of microstructure and surface topography on the electrical conductivity of Cu and Ag thin films obtained by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Polonyankin, D. A.; Blesman, A. I.; Postnikov, D. V.

    2017-05-01

    Conductive thin films formation by copper and silver magnetron sputtering is one of high technological areas for industrial production of solar energy converters, energy-saving coatings, flat panel displays and touch control panels because of their high electrical and optical properties. Surface roughness and porosity, average grain size, internal stresses, orientation and crystal lattice type, the crystallinity degree are the main physical properties of metal films affecting their electrical resistivity and conductivity. Depending on the film thickness, the dominant conduction mechanism can affect bulk conductivity due to the flow of electron gas, and grain boundary conductivity. The present investigation assesses the effect of microstructure and surface topography on the electrical conductivity of magnetron sputtered Cu and Ag thin films using X-ray diffraction analysis, scanning electron and laser interference microscopy. The highest specific conductivity (78.3 MS m-1 and 84.2 MS m-1, respectively, for copper and silver films at the thickness of 350 nm) were obtained with the minimum values of roughness and grain size as well as a high degree of lattice structuredness.

  5. Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction.

    PubMed

    Bürgi, J; Neuenschwander, R; Kellermann, G; García Molleja, J; Craievich, A F; Feugeas, J

    2013-01-01

    The purpose of the designed reactor is (i) to obtain polycrystalline and∕or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, θ-2θ scanning, fixed α-2θ scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer.

  6. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Liang, SONG; Xianping, WANG; Le, WANG; Ying, ZHANG; Wang, LIU; Weibing, JIANG; Tao, ZHANG; Qianfeng, FANG; Changsong, LIU

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (∼17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  7. High power impulse magnetron sputtering: Current-voltage-timecharacteristics indicate the onset of sustained self-sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim; Ehiasarian, Arutiun

    2007-08-03

    The commonly used current-voltage characteristics are foundinadequate for describing the pulsed nature of the high power impulsemagnetron sputtering (HIPIMS) discharge, rather, the description needs tobe expanded to current-voltage-time characteristics for each initial gaspressure. Using different target materials (Cu, Ti, Nb, C, W, Al, Cr) anda pulsed constant-voltage supply it is shown that the HIPIMS dischargestypically exhibit an initial pressure dependent current peak followed bya second phase that is power and material dependent. This suggests thatthe initial phase of a HIPIMS discharge pulse is dominated by gas ionswhereas the later phase has a strong contribution from self-sputtering.For some materials the discharge switches into a mode of sustainedself-sputtering. The very large differences between materials cannot beascribed to the different sputter yields but they indicate thatgeneration and trapping ofsecondary electrons plays a major role forcurrent-voltage-time characteristics. In particular, it is argued thatthe sustained self-sputtering phase is associated with thegeneration ofmultiply charged ions because only they can cause potential emission ofsecondary electrons whereas the yield caused by singly charged metal ionsis negligibly small.

  8. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, H. Y.; He, H. J.; Zhang, Z.; Jin, C. G.; Yang, Y.; Wang, Y. Y.; Zhuge, L. J.; Ye, C.; Wu, X. M.

    2015-05-01

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf2+ and Hf4+. The HfErO films are composed with the structures of HfO2, HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 °C. After thermal annealing, cubic phase of HfO2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power.

  9. Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

    NASA Astrophysics Data System (ADS)

    Gu, Jin-Hua; Si, Jia-Le; Wang, Jiu-Xiu; Feng, Ya-Yang; Gao, Xiao-Yong; Lu, Jing-Xiao

    2015-11-01

    The indium-tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10-4 Ω·m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions: oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (Voc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (Jsc) of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H. Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050501).

  10. [Bi]:[Te] Control, Structural and Thermoelectric Properties of Flexible Bi x Te y Thin Films Prepared by RF Magnetron Sputtering at Different Sputtering Pressures

    NASA Astrophysics Data System (ADS)

    Nuthongkum, Pilaipon; Sakdanuphab, Rachsak; Horprathum, Mati; Sakulkalavek, Aparporn

    2017-07-01

    In this work, flexible Bi x Te y thin films were prepared by radio frequency (RF) magnetron sputtering using a Bi2Te3 target on polyimide substrate. The effects of sputtering pressures, which ranged between 0.6 Pa and 1.6 Pa on the [Bi]:[Te] ratio, and structural and thermoelectric properties were investigated. The [Bi]:[Te] ratio of thin film was determined by energy-dispersive spectrometry (EDS). The EDS spectra show the variation of the [Bi]:[Te] ratio as the sputtering pressure is varied. The film deposited at 1.4 Pa almost has a stoichiometric composition. The selective films with different [Bi]:[Te] ratios and sputtering pressures were characterized by their surface morphologies, crystal and chemical structures by field emission scanning electron microscopy (FE-SEM), x-ray diffraction (XRD) and Raman spectroscopy, respectively. Electrical transport properties, including carrier concentration and mobility, were measured by Hall effect measurements. Seebeck coefficients and electrical conductivities were simultaneously measured by a direct current four-terminal method (ZEM-3). The XRD and Raman spectroscopy results show a difference in microstructure between BiTe and Bi2Te3 depending on the [Bi]:[Te] ratio. Electrical conductivity and Seebeck coefficient are related to the crystal and chemical structures. The maximum power factor of the Bi2Te3 thin film is 9.5 × 10-4 W/K2 m at room temperature, and it increases to 12.0 × 10-4 W/K2 m at 195°C.

  11. Evaluation of structure and material properties of RF magnetron sputter-deposited yttria-stabilized zirconia thin films

    NASA Astrophysics Data System (ADS)

    Piascik, Jeffrey Robert

    Over the past several decades, research has focused on utilizing ceramic materials in new technological applications. Their uses have been primarily in applications that involve high temperatures or corrosive environments. Unfortunately, ceramic materials have been limited especially since they can be brittle, failing in a sudden and catastrophic manner. A strong emphasis on understanding mechanical properties of ceramics and ways to improving their strength and toughness, has led to many new technologies. The present work is part of a larger research initiative that is aimed at using RF magnetron sputter deposition of yttria-stabilized zirconia to improve the fracture toughness of brittle substrates (more specifically dental ceramics). Partially-stabilized zirconia (PSZ) has been studied extensively, due to its high temperature stability and stress-induced tetragonal to monoclinic (T⇒M) martensitic phase transformation. RF magnetron sputtering was chosen as the deposition method because of its versatility, especially the ability to deposit oxides at low temperatures. Initial investigations focused on the development of process-structure-properties of YSZ sputtered deposited thin films. The YSZ thin films were deposited over a range of temperatures (22--300°C), pressures (5--25 mTorr), and gas compositions (Ar:O2 ratio). Initial studies characterized a select set of properties in relation to deposition parameters including: refractive index, structure, and film stress. X-ray Diffraction (XRD) showed that the films are comprised of mainly monoclinic and tetragonal crystal phases. The film refractive index determined by prism coupling, depends strongly on deposition conditions and ranged from 1.959 to 2.223. Wafer bow measurements indicate that the sputtered YSZ films can have initial stress ranging from 86 MPa tensile to 192 MPa compressive, depending on the deposition parameters. Exposure to ambient conditions (25°C, 75% relative humidity) led to large increase

  12. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    SciTech Connect

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-07-15

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H{sub 2} gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H{sub 2} (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10{sup -4} {omega} cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H{sub 2} gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films.

  13. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-12-01

    In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and internal resistance of cells. Results showed that improvement on cyclic performance of silicon anodes was achieved with novel composite silicon/graphene/MWCNT composite anode structures.

  14. Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.; Li, X.; Wanlass, M. W.; Emery, K. A.; Gessert, T. A.

    1988-01-01

    Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

  15. Design and preparation of stress-free epitaxial BaTiO3 polydomain films by RF magnetron sputtering

    PubMed Central

    Zhang, Wei; Yuan, Meiling; Wang, Xianyang; Pan, Wei; Wang, Chun-Ming; Ouyang, Jun

    2012-01-01

    Domain structures of BaTiO3 thick films grown on (100) SrTiO3 single-crystal substrates were engineered using an RF magnetron sputtering deposition process. By tuning the sputtering power and cooling rate and using an off-axis sputtering technique to prepare conducting perovskite oxide bottom electrode with heteroepitaxial quality, we have deposited epitaxial tetragonal single-domain and polydomain BaTiO3 films with a self-assembled three-domain architecture. The electrical properties and microstructure of the BaTiO3 films were characterized, and a c/a1/a2 cellular polydomain structure was clearly observed in as-grown films by optical microscopy. Such a polydomain structure was a consequence of a complete relaxation of misfit stresses of the film. Engineering of this self-assembled microstructure has great potential in providing large, field-tunable pyroelectric and electromechanical responses in next-generation microelectronic devices and micro-electro-mechanical systems (MEMS). PMID:27877494

  16. Submicrometer Hollow Bioglass Cones Deposited by Radio Frequency Magnetron Sputtering: Formation Mechanism, Properties, and Prospective Biomedical Applications.

    PubMed

    Popa, A C; Stan, G E; Besleaga, C; Ion, L; Maraloiu, V A; Tulyaganov, D U; Ferreira, J M F

    2016-02-01

    This work reports on the unprecedented magnetron sputtering deposition of submicrometric hollow cones of bioactive glass at low temperature in the absence of any template or catalyst. The influence of sputtering conditions on the formation and development of bioglass cones was studied. It was shown that larger populations of well-developed cones could be achieved by increasing the argon sputtering pressure. A mechanism describing the growth of bioglass hollow cones is presented, offering the links for process control and reproducibility of the cone features. The composition, structure, and morphology of the as-synthesized hollow cones were investigated by energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR), grazing incidence geometry X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM)-selected area electron diffraction (SAED). The in vitro biological performance, assessed by degradation tests (ISO 10993-14) and cytocompatibility assays (ISO 10993-5) in endothelial cell cultures, was excellent. This allied with resorbability and the unique morphological features make the submicrometer hollow cones interesting candidate material devices for focal transitory permeabilization of the blood-brain barrier in the treatment of carcinoma and neurodegenerative disorders.

  17. Physical and chemical characterization of Ag-doped Ti coatings produced by magnetron sputtering of modular targets.

    PubMed

    Schmitz, Tobias; Warmuth, Franziska; Werner, Ewald; Hertl, Cornelia; Groll, Jürgen; Gbureck, Uwe; Moseke, Claus

    2014-11-01

    Silver-doped Ti films were produced using a single magnetron sputtering source equipped with a titanium target containing implemented silver modules under variation of bias voltage and substrate temperature. The Ti(Ag) films were characterized regarding their morphology, contact angle, phase composition, silver content and distribution as well as the elution of Ag(+) ions into cell media. SEM and AFM pictures showed that substrate heating during film deposition supported the formation of even and dense surface layers with small roughness values, an effect that could even be enforced, when a substrate bias voltage was applied instead. The deposition of both Ti and Ag was confirmed by X-ray diffraction. ICP-MS and EDX showed a clear correlation between the applied sputtering parameters and the silver content of the coatings. Surface-sensitive XPS measurements revealed that higher substrate temperatures led to an accumulation of Ag in the near-surface region, while the application of a bias voltage had the opposite effect. Additional elution measurements using ICP-MS showed that the release kinetics depended on the amount of silver located at the film surface and hence could be tailored by variation of the sputter parameters.

  18. Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.; Li, X.; Wanlass, M. W.; Emery, K. A.; Gessert, T. A.

    1988-01-01

    Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

  19. Optical and electrical characteristics of Ga-Zn-O thin films prepared by RF magnetron co-sputtering system

    NASA Astrophysics Data System (ADS)

    Kim, Nam-Jung; Shin, Naeho; Hwang, Chang-Su

    2017-01-01

    We investigated the optical, electrical, and structural properties of GaZnO (GZO) thin films which have proven the potential uses in transparent thin film transistor. The doping concentrations of Ga atoms in GZO thin films were continuously controlled via the RF magnetron co-sputtering system in which ZnO target was sputtered at a fixed RF power 200 W, while Ga2O3 target was sputtered with a varied RF power from 30 W to 100 W. The highest electrical conductance and carrier mobility coincides with the dramatic optical band gap widening due to Burstein-Moss effect at the ∼3% atomic concentration of Ga doping. This study clearly indicates that the number of degenerate electrons in the conduction band increases sharply near the 3% doping level, but the band narrowing effect begins to dominate due to the electron-electron and electron-impurity interactions, resulting in the decrease of the carrier mobility beyond the optimized doping level.

  20. Design and preparation of stress-free epitaxial BaTiO3 polydomain films by RF magnetron sputtering.

    PubMed

    Zhang, Wei; Yuan, Meiling; Wang, Xianyang; Pan, Wei; Wang, Chun-Ming; Ouyang, Jun

    2012-06-01

    Domain structures of BaTiO3 thick films grown on (100) SrTiO3 single-crystal substrates were engineered using an RF magnetron sputtering deposition process. By tuning the sputtering power and cooling rate and using an off-axis sputtering technique to prepare conducting perovskite oxide bottom electrode with heteroepitaxial quality, we have deposited epitaxial tetragonal single-domain and polydomain BaTiO3 films with a self-assembled three-domain architecture. The electrical properties and microstructure of the BaTiO3 films were characterized, and a c/a1/a2 cellular polydomain structure was clearly observed in as-grown films by optical microscopy. Such a polydomain structure was a consequence of a complete relaxation of misfit stresses of the film. Engineering of this self-assembled microstructure has great potential in providing large, field-tunable pyroelectric and electromechanical responses in next-generation microelectronic devices and micro-electro-mechanical systems (MEMS).

  1. Design and preparation of stress-free epitaxial BaTiO3 polydomain films by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Yuan, Meiling; Wang, Xianyang; Pan, Wei; Wang, Chun-Ming; Ouyang, Jun

    2012-06-01

    Domain structures of BaTiO3 thick films grown on (100) SrTiO3 single-crystal substrates were engineered using an RF magnetron sputtering deposition process. By tuning the sputtering power and cooling rate and using an off-axis sputtering technique to prepare conducting perovskite oxide bottom electrode with heteroepitaxial quality, we have deposited epitaxial tetragonal single-domain and polydomain BaTiO3 films with a self-assembled three-domain architecture. The electrical properties and microstructure of the BaTiO3 films were characterized, and a c/a1/a2 cellular polydomain structure was clearly observed in as-grown films by optical microscopy. Such a polydomain structure was a consequence of a complete relaxation of misfit stresses of the film. Engineering of this self-assembled microstructure has great potential in providing large, field-tunable pyroelectric and electromechanical responses in next-generation microelectronic devices and micro-electro-mechanical systems (MEMS).

  2. Effect of Silver Dopants on the ZnO Thin Films Prepared by a Radio Frequency Magnetron Co-Sputtering System

    PubMed Central

    Liu, Fang-Cheng; Li, Jyun-Yong; Chen, Tai-Hong; Chang, Chun-How; Lee, Ching-Ting; Hsiao, Wei-Hua; Liu, Day-Shan

    2017-01-01

    Ag-ZnO co-sputtered films at various atomic ratios of Ag (Ag/(Ag + Zn) at.%) were prepared by a radio frequency magnetron cosputtering system, using the co-sputtered targets of Ag and ZnO. The activation of the Ag acceptors (AgZn) and the formation of the Ag aggregations (Ag0) in the ZnO matrix were investigated from XRD, Raman scattering, and XPS measurements. The Ag-ZnO co-sputtered film behaving like a p-type conduction was achievable after annealing at 350 °C under air ambient for 1 h. PMID:28773159

  3. Effect of sputtering power on Cd/Zn atomic ratio and optical properties of Cu2ZnxCd1-xSnS4 thin films deposited by magnetron sputtering: An experimental and first-principle study

    NASA Astrophysics Data System (ADS)

    Xu, Na; Li, Pingting; Hao, Yunxing; Wang, Xin; Meng, Lei

    2016-09-01

    Cu2ZnxCd1-xSnS4 (CZCTS) thin films were deposited on soda-lime glass (SLG) substrates by rf magnetron sputtering. It is found that the Cd/Zn atomic ratio of kesterite CZCTS increases with the enhancement of sputtering power. The structural, surface morphology and optical properties of the CZCTS thin films deposited at different sputtering power were systemically investigated. The X-ray diffraction (XRD) measurements indicate that all CZCTS thin films are polycrystalline with kesterite structure and no impurity phase is observed. The variation of Cd/Zn atomic ratio in CZCTS results in the shift of the optical bandgap.

  4. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect

    Nie, Man Mete, Tayfun; Ellmer, Klaus

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

  5. Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kuschel, Thomas; von Keudell, Achim

    2010-05-01

    Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with this microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.

  6. Fabrication and Electrical Characterization of the Si/ZnO/ZnO:Al Structure Deposited by RF-Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Alaya, A.; Djessas, K.; El Mir, L.; Khirouni, K.

    2016-10-01

    The electrical transport properties of the structures of Si(p)/ZnO(i)/ZnO: Al(3%) and Si(p)/PS/ZnO(i)/ZnO: Al(3%) deposited by radio-frequency-magnetron sputtering were investigated and compared by using current-voltage and impedance spectroscopy measurements in a wide temperature range of 80-300 K. Aluminum-doped ZnO is considered to be one of the most important transparent conducting oxide materials due to its high conductivity, good transparency and low cost. From the current-voltage-temperature ( I- V- T) characteristics, it was found that both structures had a good rectifying behavior. This behavior decreases according to the porous silicon layer. The variation of the conductance with frequency indicates the semiconducting behavior and superposition of different conduction mechanisms. The insertion of the porous silicon layer results in a decrease of conductivity, which is attributed to reduced conductivity of defect-rich porous silicon.

  7. Magnetron sputtering based direct fabrication of three dimensional CdTe hierarchical nanotrees exhibiting stable superhydrophobic property

    NASA Astrophysics Data System (ADS)

    Luo, Bingwei; Deng, Yuan; Wang, Yao; Shi, Yongming; Cao, Lili; Zhu, Wei

    2013-09-01

    Three dimensional CdTe hierarchical nanotrees are initially prepared by a simple one-step magnetron sputtering method without any templates or additives. The CdTe hierarchical nanotrees are constructed by the spear-like vertical trunks and horizontal branches with the diameters of about 100 nm at bottom and became cuspidal on the top. The particular nanostructure imparts these materials superhydrophobic property, and this property can be preserved after placing in air for 90 days, and is stable even after the ultraviolet light and X-ray irradiation, respectively. This study provides a simple strategy to achieve superhydrophobic properties for CdTe materials at lower temperature, which opens a new potential for CdTe solar cell with self-cleaning property.

  8. Cross sectional TEM analysis of duplex HIPIMS and DC magnetron sputtered Mo and W doped carbon coatings

    NASA Astrophysics Data System (ADS)

    Sharp, J.; Castillo Muller, I.; Mandal, P.; Abbas, A.; West, G.; Rainforth, W. M.; Ehiasarian, A.; Hovsepian, P.

    2015-10-01

    A FIB lift-out sample was made from a wear-resistant carbon coating deposited by high power impulse magnetron sputtering (HIPIMS) with Mo and W. TEM analysis found columnar grains extending the whole ∼1800 nm thick film. Within the grains, the carbon was found to be organised into clusters showing some onion-like structure, with amorphous material between them; energy dispersive X-ray spectroscopy (EDS) found these clusters to be Mo- and W-rich in a later, thinner sample of the same material. Electron energy-loss spectroscopy (EELS) showed no difference in C-K edge, implying the bonding type to be the same in cluster and matrix. These clusters were arranged into stripes parallel to the film plane, of spacing 7-8 nm; there was a modulation in spacing between clusters within these stripes that produced a second, coarser set of striations of spacing ∼37 nm.

  9. Research of the temperature fields influence on the stress state of internal cylindrical surfaces modified by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Blesman, A. I.; Postnikov, D. V.; Tkachenko, E. A.; Polonyankin, D. A.

    2017-01-01

    For material selection of protective metal coating, deposited on the products’ surface with cylindrical symmetry by magnetron sputtering and exposed to intense heat loads during pulsed operation mode, it was executed numerical simulations of the temperature fields and the stress state caused by pressure and uneven temperature distribution. It was determined a coatings’ material satisfying the minimum of internal stresses, which is one of the main criteria of their service life. Based on the calculation results titanium provides the maximum reduction in the internal stress while the usage of molybdenum as a coatings’ material leads to the greatest decrease of pulsed temperature impact to the binary “steel-coating” systems with cylindrical symmetry.

  10. Epitaxial growth of aluminium-doped zinc oxide films by magnetron sputtering on (001), (110), and (012) oriented sapphire substrates

    NASA Astrophysics Data System (ADS)

    Kuppusami, P.; Vollweiler, G.; Rafaja, D.; Ellmer, K.

    2005-01-01

    Highly aluminium-doped zinc oxide (ZnO) films have been grown on differently oriented sapphire substrates by magnetron sputtering from an oxidic target. Rocking curve measurements, Rutherford backscattering analysis and transmission electron microscopy show that the films exhibit a disturbed film growth. However, despite the large nominal lattice mismatch between ZnO and sapphire (-31%), the films grow epitaxially on every sapphire orientation, even at room temperature. This was proven by pole figure analysis. The reason that epitaxial growth can be observed is an incommensurate lattice fitting between ZnO and sapphire by a mutual rotational alignment of their lattices. Films of the best crystallographic quality have been grown on (110)-oriented sapphire, which is also reflected by the highest Hall mobility in these layers.

  11. Deposition and characterization of titanium carbide thin films by magnetron sputtering using Ti and TiC targets

    NASA Astrophysics Data System (ADS)

    Ait Djafer, Amina Zouina; Saoula, Nadia; Madaoui, Noureddine; Zerizer, Abdellatif

    2014-09-01

    In this study we present the effect of negative bias applied to substrate and the pressure on the properties of TiC films (i.e. structure, Raman spectroscopy, electrical resistivity and hardness). The elaboration of our films has been carried out by RF-Magnetron Sputtering, 13.56 MHz, using two targets: titanium carbide and pure titanium. The film depositions have been done on silicon, glass and steel substrates. The total pressure was 10-60 mTorr. The attention was given to study the influence of different parameters, pressure and substrate-bias, on the properties of TiC layers. In this paper, a comparison between the properties of TiC prepared using pure titanium target and titanium carbide target is made. The deposited layers were characterized by XRD analysis, nanoindentation, four probe technique and Raman spectroscopy.

  12. Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

    SciTech Connect

    Oh, Min-Suk; Hwang, Dae-Kue; Choi, Yong-Seok; Kang, Jang-Won; Park, Seong-Ju; Hwang, Chi-Sun; Cho, Kyoung Ik

    2008-09-15

    Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p-type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p-type ZnO after being annealed at 800 deg. C in an N{sub 2} ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P{sub 2}O{sub 5} phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.

  13. Influence of Substrate Temperature on the Properties of Nanostructured ZnO Thin Films Grown by RF Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Mahdhi, H.; Ayadi, Z. Ben; Gauffier, J. L.; Djessas, K.

    2016-01-01

    Transparent conducting thin films of ZnO:Ga (GZO) have been deposited onto glass substrates and were prepared by RF-magnetron sputtering from nanoparticles synthesized by the sol-gel method. The preheated substrate temperature was changed from room temperature to 300°C. X-ray diffraction spectra showed that the as-deposited films are polycrystalline ZnO with a hexagonal wurtzite structure. Surface morphology, optical properties (such as transmission, reflectance), and conductivity were investigated. The obtained results revealed that the structures and properties of the films were greatly affected by the substrate temperature. Thin films of GZO have a low resistivity, with a minimum value of 2.20 × 10-3 Ω cm deposited at a substrate temperature of 200°C.

  14. Synthesis and characterization of pure anatase phase nanocrystalline TiO2 thin film by magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Pawar, Nimisha; Bhargava, Ankita; Dayal, Saurabh; Kumar, C. Sasi

    2016-05-01

    In present work, our focus is to deposit anatase phase nanocrystalline TiO2 thin films. In order to prepare Titanium oxide films we first deposited Titanium thin films using DC magnetron sputtering and then the substrates were annealed in a muffle furnace at different temperatures. Further the samples were characterized for analysis of phase, morphology and optical properties using XRD, SEM, AFM and photoluminescence spectroscopy respectively. XRD shows the formation of tetragonal phase TiO2 with lattice parameters values a= 3.8 Å and c=9.6 Å. The surface roughness value of the films were found to vary from 1.6 nm to 15.9 nm. The grain size as estimated from AFM varies from 48 nm to 125 nm at different temperatures. Thus, the results revealed the formation of ultra-smooth anatase phase pure nanocrystalline TiO2 spherical particles.

  15. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    NASA Astrophysics Data System (ADS)

    Sirghi, L.; Hatanaka, Y.; Sakaguchi, K.

    2015-10-01

    The present work is investigating the photocatalytic activity of TiO2 thin films deposited by radiofrequency magnetron sputtering of a pure TiO2 target in Ar and Ar/H2O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  16. Morphology of TiN thin films grown on MgO(001) by reactive dc magnetron sputtering

    SciTech Connect

    Ingason, A. S.; Magnus, F.; Olafsson, S.; Gudmundsson, J. T.

    2010-07-15

    Thin TiN films were grown by reactive dc magnetron sputtering on single-crystalline MgO(001) substrates at a range of temperatures from room temperature to 600 deg. C. Structural characterization was carried out using x-ray diffraction and reflection methods. TiN films grow epitaxially on the MgO substrates at growth temperatures of 200 deg. C and above. The crystal coherence length determined from Laue oscillations and the Scherrer method agrees with x-ray reflection thickness measurements to 6% and within 3% for growth temperatures of 200 and 600 deg. C, respectively. For lower growth temperatures the films are polycrystalline but highly textured and porous.

  17. Characterization of nanostructured VO2 thin films grown by magnetron controlled sputtering deposition and post annealing method.

    PubMed

    Chen, Sihai; Lai, Jianjun; Dai, Jun; Ma, Hong; Wang, Hongchen; Yi, Xinjian

    2009-12-21

    By magnetron controlled sputtering system, a new nanostructured metastable monoclinic phase VO2 (B) thin film has been fabricated. The testing result shows that this nanostructured VO2 (B) thin film has high temperature coefficient of resistance (TCR) of -7%/K. Scanning electron microscopy measurement shows that the average grain diameter of the VO2 (B) crystallite is between 100 and 250 nm. After post annealed, VO2 (B) crystallite is changed into monoclinic (M) phase VO2 (M) crystallite with the average grain diameter between 20 and 50 nm. A set up of testing the thin film switching time is established. The test result shows the switching time is about 50 ms. With the nanostructured VO2 (B) and VO2 (M) thin films, optical switches and high sensitivity detectors will be presented.

  18. Characteristics of TiNi Thin Films Deposited by Magnetron Sputtering System with Optical Emission Spectroscopy Monitor

    NASA Astrophysics Data System (ADS)

    Liu, Erqiang; Bao, Mingdong; Yuan, Guozheng; Xiao, Gesheng; Jin, Tao; Li, Zhigang; Shu, Xuefeng

    2015-07-01

    TiNi composite thin films were fabricated using a closed-field unbalanced magnetron sputtering system equipped with optical emission spectroscopy monitor (OEM). The thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and nanoindentation. Results show that the TiNi films are amorphous, and their composition varies approximately linearly with the OEM value. Thus, the film composition could be controlled by in situ real-time OEM. The structure of the single B2 parent phase was observed in the annealed TiNi film. The hardness and elastic modulus of the films increased because of the precipitation of the Ti3Ni4 phase in the single B2 parent phase.

  19. p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Chen, Nuofu; Yin, Zhigang; Dai, Ruixuan; Bai, Yiming

    2006-11-01

    Sb-doped Zn1-xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05⩽x⩽0.13) was confirmed by Hall measurements, revealing a hole concentration of 1015-1016cm-3 and a mobility of 0.6-4.5cm2/Vs. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices.

  20. Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

    SciTech Connect

    Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2016-05-23

    Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film.