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Sample records for colossal magnetoresistive manganites

  1. Nodal Quasiparticle in Pseudogapped Colossal Magnetoresistive Manganites

    SciTech Connect

    Mannella, N.

    2010-06-02

    A characteristic feature of the copper oxide high-temperature superconductors is the dichotomy between the electronic excitations along the nodal (diagonal) and antinodal (parallel to the Cu-O bonds) directions in momentum space, generally assumed to be linked to the d-wave symmetry of the superconducting state. Angle-resolved photoemission measurements in the superconducting state have revealed a quasiparticle spectrum with a d-wave gap structure that exhibits a maximum along the antinodal direction and vanishes along the nodal direction. Subsequent measurements have shown that, at low doping levels, this gap structure persists even in the high-temperature metallic state, although the nodal points of the superconducting state spread out in finite Fermi arcs. This is the so-called pseudogap phase, and it has been assumed that it is closely linked to the superconducting state, either by assigning it to fluctuating superconductivity or by invoking orders which are natural competitors of d-wave superconductors. Here we report experimental evidence that a very similar pseudogap state with a nodal-antinodal dichotomous character exists in a system that is markedly different from a superconductor: the ferromagnetic metallic groundstate of the colossal magnetoresistive bilayer manganite La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7}. Our findings therefore cast doubt on the assumption that the pseudogap state in the copper oxides and the nodal-antinodal dichotomy are hallmarks of the superconductivity state.

  2. Origin of colossal magnetoresistance in LaMnO3 manganite.

    PubMed

    Baldini, Maria; Muramatsu, Takaki; Sherafati, Mohammad; Mao, Ho-kwang; Malavasi, Lorenzo; Postorino, Paolo; Satpathy, Sashi; Struzhkin, Viktor V

    2015-09-01

    Phase separation is a crucial ingredient of the physics of manganites; however, the role of mixed phases in the development of the colossal magnetoresistance (CMR) phenomenon still needs to be clarified. We report the realization of CMR in a single-valent LaMnO3 manganite. We found that the insulator-to-metal transition at 32 GPa is well described using the percolation theory. Pressure induces phase separation, and the CMR takes place at the percolation threshold. A large memory effect is observed together with the CMR, suggesting the presence of magnetic clusters. The phase separation scenario is well reproduced, solving a model Hamiltonian. Our results demonstrate in a clean way that phase separation is at the origin of CMR in LaMnO3.

  3. Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

    NASA Astrophysics Data System (ADS)

    Chen, X. J.; Habermeier, H.-U.; Zhang, H.; Gu, G.; Varela, M.; Santamaria, J.; Almasan, C. C.

    2005-09-01

    It has been suggested that the maximum magnitude of colossal magnetoresistance occurs in mixed-valent manganites with a tolerance factor t=0.96 [Zhou, Archibald, and Goodenough, Nature (London) 381, 770 (1996)]. However, at t≈0.96 most manganites have relatively low values of the metal-insulator transition temperature TMI(˜60-150K) . Here, we report that a 50 Å La0.9Sr0.1MnO3 thin film with t=0.96 grown on a (100) SrTiO3 substrate has a metal-insulator transition above room temperature, which represents a doubling of TMI compared with its value in the bulk material. We show that this spectacular increase of TMI is a result of the epitaxially compressive strain-induced reduction of the Jahn-Teller distortion.

  4. Origin of colossal magnetoresistance in LaMnO3 manganite

    DOE PAGES

    Baldini, Maria; Muramatsu, Takaki; Sherafati, Mohammad; ...

    2015-08-13

    Phase separation is a crucial ingredient of the physics of manganites; however, the role of mixed phases in the development of the colossal magnetoresistance (CMR) phenomenon still needs to be clarified. In this paper, we report the realization of CMR in a single-valent LaMnO3 manganite. We found that the insulator-to-metal transition at 32 GPa is well described using the percolation theory. Pressure induces phase separation, and the CMR takes place at the percolation threshold. A large memory effect is observed together with the CMR, suggesting the presence of magnetic clusters. The phase separation scenario is well reproduced, solving a modelmore » Hamiltonian. Finally, our results demonstrate in a clean way that phase separation is at the origin of CMR in LaMnO3.« less

  5. First Order Colossal Magnetoresistance Transitions in the Two-Orbital Model for Manganites

    SciTech Connect

    Sen, Cengiz; Alvarez, Gonzalo; Dagotto, Elbio R

    2010-01-01

    Large-scale Monte Carlo simulation results for the two-orbital model for manganites, including Jahn- Teller lattice distortions, are presented here. At hole density x 1=4 and in the vicinity of the region of competition between the ferromagnetic metallic and spin-charge-orbital ordered insulating phases, the colossal magnetoresistance (CMR) phenomenon is observed with a magnetoresistance ratio 10 000%. Our main result is that this CMR transition is found to be of first order in some portions of the phase diagram, in agreement with early results from neutron scattering, specific heat, and magnetization, thus solving a notorious discrepancy between experiments and previous theoretical studies. The first order characteristics of the transition survive, and are actually enhanced, when weak quenched disorder is introduced.

  6. Colossal magnetoresistance and phase separation in manganite thin films

    NASA Astrophysics Data System (ADS)

    Srivastava, M. K.; Agarwal, V.; Kaur, A.; Singh, H. K.

    2017-05-01

    In the present work, polycrystalline Sm0.55Sr0.45MnO3 thin films were prepared on LSAT (001) single crystal substrates by ultrasonic nebulized spray pyrolysis technique. The X-ray diffraction θ-2θ scan reveals that these films (i) have very good crystallinity, (ii) are oriented along out-of-plane c-direction, and (iii) are under small tensile strain. The impact of oxygen vacancy results into (i) higher value of paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature, i.e., TC/TIM, (ii) sharper PMI-FMM transition, (iii) higher value of magnetization and magnetic saturation moment, and (iv) higher value of magnetoresistance (˜99%). We suggest here that oxygen vacancy favors FMM phase while oxygen vacancy annihilation leads to antiferromagnetic-charge ordered insulator (AFM-COI) phase. The observed results have been explained in context of phase separation (PS) caused by different fractions of the competing FMM and AFM-COI phases.

  7. Variation of Topology in Magnetic Bubbles in a Colossal Magnetoresistive Manganite.

    PubMed

    Yu, Xiuzhen; Tokunaga, Yusuke; Taguchi, Yasujiro; Tokura, Yoshinori

    2017-01-01

    The emergence of zero-bias bubbles (≈100 nm in diameter) with various Bloch lines and their triangular lattice is revealed in a colossal magnetoresistive material, La1-x Srx MnO3 , by means of Lorentz transmission electron microscopy (LTEM). The magnetization dynamics, and accompanying changes of the topological number of bubbles via the field-driven motion of the Bloch lines, are demonstrated by in situ LTEM observations.

  8. Magnetorefractive effect in manganites with a colossal magnetoresistance in the visible spectral region

    SciTech Connect

    Sukhorukov, Yu. P. Telegin, A. V.; Granovsky, A. B. Gan'shina, E. A.; Zhukov, A.; Gonzalez, J.; Caicedo, J. M.; Bessonov, V. D.; Kaul', A. R.; Gorbenko, O. Yu.; Korsakov, I. E.

    2012-01-15

    The magnetotransmission, magnetoreflection, and magnetoresistance of the La{sub 0.7}Ca{sub 0.3}MnO{sub 3} and La{sub 0.9}Ag{sub 0.1}MnO{sub 3} epitaxial films have been investigated. It has been found that the films exhibit a significant magnetorefractive effect in the case of reflection and transmission of light in the fundamental absorption region both in the vicinity of the Curie temperature and at low temperatures. It has been shown that the magnetorefractive effect in the infrared spectral region of the manganites is determined by a high-frequency response to magnetoresistance, whereas the magnetorefractive effect in the visible spectral region of these materials is associated with a change in the electronic structure in response to a magnetic field, which, in turn, leads to a change in the electron density of states, the probability of interband optical transitions, and the shift of light absorption bands. The obtained values of the magnetotransmittance and magnetoreflectance in the visible spectral region are less than those observed in the infrared region of the spectrum, but they are several times greater than the linear magneto-optical effects. As a result, the magnetorefractive effect, which is a nongyrotropic phenomenon, makes it possible to avoid the use of light analyzers and polarizers in optical circuits.

  9. Magnetorefractive effect in manganites with a colossal magnetoresistance in the visible spectral region

    NASA Astrophysics Data System (ADS)

    Sukhorukov, Yu. P.; Telegin, A. V.; Granovsky, A. B.; Gan'shina, E. A.; Zhukov, A.; Gonzalez, J.; Herranz, G.; Caicedo, J. M.; Yurasov, A. N.; Bessonov, V. D.; Kaul', A. R.; Gorbenko, O. Yu.; Korsakov, I. E.

    2012-01-01

    The magnetotransmission, magnetoreflection, and magnetoresistance of the La0.7Ca0.3MnO3 and La0.9Ag0.1MnO3 epitaxial films have been investigated. It has been found that the films exhibit a significant magnetorefractive effect in the case of reflection and transmission of light in the fundamental absorption region both in the vicinity of the Curie temperature and at low temperatures. It has been shown that the magnetorefractive effect in the infrared spectral region of the manganites is determined by a high-frequency response to magnetoresistance, whereas the magnetorefractive effect in the visible spectral region of these materials is associated with a change in the electronic structure in response to a magnetic field, which, in turn, leads to a change in the electron density of states, the probability of interband optical transitions, and the shift of light absorption bands. The obtained values of the magnetotransmittance and magnetoreflectance in the visible spectral region are less than those observed in the infrared region of the spectrum, but they are several times greater than the linear magneto-optical effects. As a result, the magnetorefractive effect, which is a nongyrotropic phenomenon, makes it possible to avoid the use of light analyzers and polarizers in optical circuits.

  10. Chemical Ordering Modulated Electronic Phase Separation and Macroscopic Properties in Colossal Magnetoresistance Manganites

    NASA Astrophysics Data System (ADS)

    Zhu, Yinyan; Du, Kai; Yin, Lifeng; Shen, Jian; Low-dimensional material physics Team

    Using unit cell by unit cell superlattice growth technique, we determine the role of chemical ordering of the Pr dopant in a colossal magnetoresistance (La1-yPry)1-x CaxMnO3 (LPCMO) system, which has been well known for its large length scale electronic phase separation (EPS) phenomena. Our experimental results show that the chemical ordering of Pr leads to dramatic reduction of the length scale of EPS. Moreover, compared to the conventional Pr-disordered LPCMO system, the Pr-ordered LPCMO system has ~100 K higher metal-insulator transition temperature. We have further investigated the n-dependence of the physical properties of the (LCMO)2n/(PCMO)n superlattices. Magnetic and transport measurements indicate that the physical properties change nonmonotonically with increasing n, reaching a minimum for both the Curie temperature and the meta-insulator transition temperature. The crossover thickness thus reflects the characteristic correlation length scale along the vertical direction of the superlattice. For superlattices with n smaller than the correlation length, we combine MFM studies and model calculations to explain the weakened ferromagnetism and metallicity with increasing n.

  11. Dynamics of multiple phases in a colossal-magnetoresistive manganite as revealed by dielectric spectroscopy.

    PubMed

    Sheng, Zhigao; Nakamura, Masao; Kagawa, Fumitaka; Kawasaki, Masashi; Tokura, Yoshinori

    2012-07-10

    Electronic phase separation is one of the key features in correlated electron oxides. The coexistence and competition of multiple phases give rise to gigantic responses to tiny stimuli producing dramatic changes in magnetic, transport and other properties of these compounds. To probe the physical properties of each phase separately is crucial for a comprehensive understanding of phase separation phenomena and for designing their device functions. Here we unravel, using a unique p-n junction configuration, dynamic properties of multiple phases in manganite thin films. The multiple dielectric relaxations have been detected and their corresponding multiple phases have been identified, while the activation energies of dielectric responses from different phases were extracted separately. Their phase evolutions with changing both temperature and applied magnetic field have been demonstrated by dielectric response. These results provide a guideline for exploring the electronic phase separation phenomena in correlated electron oxides.

  12. Polaron Coherence Condensation As the Mechanism for Colossal Magnetoresistance in Layered Manganites

    SciTech Connect

    Mannella, N.; Yang, W.L.; Tanaka, K.; Zhou, X.J.; Zheng, H.; Mitchell, J.F.; Zaanen, J.; Devereaux, T.P.; Nagaosa, N.; Hussain, Z.; Shen, Z.-X.; /SLAC

    2007-11-20

    Angle-resolved photoemission spectroscopy data for the bilayer manganite La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} show that, upon lowering the temperature below the Curie point, a coherent polaronic metallic groundstate emerges very rapidly with well defined quasiparticles which track remarkably well the electrical conductivity, consistent with macroscopic transport properties. Our data suggest that the mechanism leading to the insulator-to-metal transition in La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} can be regarded as a polaron coherence condensation process acting in concert with the Double Exchange interaction.

  13. Experimental Evidence of the Origin of Nanophase Separation in Low Hole-Doped Colossal Magnetoresistant Manganites.

    PubMed

    Cortés-Gil, Raquel; Ruiz-González, M Luisa; González-Merchante, Daniel; Alonso, José M; Hernando, Antonio; Trasobares, Susana; Vallet-Regí, María; Rojo, Juan M; González-Calbet, José M

    2016-01-13

    While being key to understanding their intriguing physical properties, the origin of nanophase separation in manganites and other strongly correlated materials is still unclear. Here, experimental evidence is offered for the origin of the controverted phase separation mechanism in the representative La1-xCaxMnO3 system. For low hole densities, direct evidence of Mn(4+) holes localization around Ca(2+) ions is experimentally provided by means of aberration-corrected scanning transmission electron microscopy combined with electron energy loss spectroscopy. These localized holes give rise to the segregated nanoclusters, within which double exchange hopping between Mn(3+) and Mn(4+) remains restricted, accounting for the insulating character of perovskites with low hole density. This localization is explained in terms of a simple model in which Mn(4+) holes are bound to substitutional divalent Ca(2+) ions.

  14. Colossal piezoresistance in manganites.

    NASA Astrophysics Data System (ADS)

    Tosado, Jacob; Lopez, Josymir; Dhakal, Tara; Biswas, Amlan

    2007-03-01

    We have studied the effect of the application of direct mechanical stress on thin films of the hole-doped manganese oxide (manganite) (La1-yPry)1-xCaxMnO3 (LPCMO). The two competing phases in manganites are the pseudocubic ferromagnetic metallic (FMM) phase and the orthorhombic charge-ordered insulating (COI) phase. Due to the different structures of the FMM and COI phases, manganites are susceptible to mechanical stresses. The traditional methods of applying stress on oxide thin films result in different growth modes which makes it difficult to quantify the strain in the thin film. Using a calibrated screw we applied direct mechanical stress on the substrate and measured the change in the phase diagram of the manganite as a function of strain. Our results show that the effect of strain is the largest in the fluid phase separated region of the phase diagram^2, where we observe a strain-induced change in resistance of about 5 orders of magnitude. [2] Tara Dhakal, et. al, Cond-mat/0607502.

  15. Temperature dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La1-xSrxMnO3

    SciTech Connect

    Arenholz, Elke; Mannella, N.; Booth, C.H.; Rosenhahn, A.; Sell, B.C.; Nambu, A.; Marchesini, S.; Mun, B. S.; Yang, S.-H.; Watanabe, M.; Ibrahim, K.; Arenholz, E.; Young, A.; Guo, J.; Tomioka, Y.; Fadley, C.S.

    2007-12-06

    We have studied the temperature-dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La{sub 1-x}Sr{sub x}MnO{sub 3} (x= 0.3-0.4) with core and valence level photoemission (PE), x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES), resonant inelastic x-ray scattering (RIXS), extended x-ray absorption fine structure (EXAFS) spectroscopy and magnetometry. As the temperature is varied across the Curie temperature T{sub c}, our PE experiments reveal a dramatic change of the electronic structure involving an increase in the Mn spin moment from {approx} 3 {micro}B to {approx} 4 {micro}B, and a modification of the local chemical environment of the other constituent atoms indicative of electron localization on the Mn atom. These effects are reversible and exhibit a slow-timescale {approx}200 K-wide hysteresis centered at T{sub c}. Based upon the probing depths accessed in our PE measurements, these effects seem to survive for at least 35-50 {angstrom} inward from the surface, while other consistent signatures for this modification of the electronic structure are revealed by more bulk sensitive spectroscopies like XAS and XES/RIXS. We interpret these effects as spectroscopic fingerprints for polaron formation, consistent with the presence of local Jahn-Teller distortions of the MnO{sub 6} octahedra around the Mn atom, as revealed by the EXAFS data. Magnetic susceptibility measurements in addition show typical signatures of ferro-magnetic clusters formation well above the Curie temperature.

  16. Effectis of Lattice Distortion, Polaron Sonduction and Double-Exchange Interaction on the Physical Properties of Magnetoresistive Manganites and Cobaltites

    NASA Technical Reports Server (NTRS)

    Yeh, N. C.; Vasquez, R. P.; Wei, J. Y. T.; Fu, C. C.; Beach, G.; Huynh, J.; Samoilov, A. V.; Boris, A. V.; Kovaleva, N. N.; Bazhenov, A. V.

    1997-01-01

    The relevance of lattice distortion, polaron conduction, and double-exchange interaction to the occurrence of colossal magnetoresistance (SMR) is investigated by comparing the physical properties of magnetoresistive manganites and cobaltites.

  17. Colossal Magnetoresistive Manganite Based Fast Bolometric X-ray Sensors for Total Energy Measurements of Free Electron Lasers

    SciTech Connect

    Yong, G J; Kolagani, R M; Adhikari, S; Mundle, R M; Cox, D W; Davidson III, A L; Liang, Y; Drury, O B; Hau-Riege, S P; Gardner, C; Ables, E; Bionta, R M; Friedrich, S

    2008-12-17

    Bolometric detectors based on epitaxial thin films of rare earth perovskite manganites have been proposed as total energy monitors for X-ray pulses at the Linac Coherent Light Source free electron laser. We demonstrate such a detector scheme based on epitaxial thin films of the perovskite manganese oxide material Nd{sub 0.67}Sr{sub x0.33}MnO{sub 3}, grown by pulsed laser deposition on buffered silicon substrates. The substrate and sensor materials are chosen to meet the conflicting requirements of radiation hardness, sensitivity, speed and linearity over a dynamic range of three orders of magnitude. The key challenge in the material development is the integration of the sensor material with Si. Si is required to withstand the free electron laser pulse impact and to achieve a readout speed three orders of magnitude faster than conventional cryoradiometers for compatibility with the Linac Coherent Light Source pulse rate. We discuss sensor material development and the photoresponse of prototype devices. This Linac Coherent Light Source total energy monitor represents the first practical application of manganite materials as bolometric sensors.

  18. Mn K-edge XANES study of the La1-xCaxMnO3 colossal magnetoresistive manganites

    NASA Astrophysics Data System (ADS)

    Ignatov, A. Yu.; Ali, N.; Khalid, S.

    2001-07-01

    We report Mn K-edge x-ray absorption near edge structure (XANES) calculations of the La1-xCaxMnO3 manganites considering three pair correlations, according to the three fundamental degrees of freedom governing their unusual electronic properties, namely, the electronic structure of the unoccupied states probed by the Mn K-edge profile versus (i) local atomic distortions; (ii) local magnetic ordering; and (iii) the charge-transfer nature of the Mn-O bonds. The calculations are accompanied by Mn K-edge XANES measurements in the temperature range 30-300 K. The main features of the absorption edge can be qualitatively reproduced in terms of single-electron multiple-scattering calculations for an 87-atom cluster. Lattice polaronic distortions in La0.7Ca0.3MnO3 are simulated assuming a strongly distorted orthorhombic structure above and an almost undistorted rhombohedral structure below Tc. The results roughly reproduce the energy ``shift'' across Tc observed experimentally. Mn K-edge spin-polarized XANES spectra of the x=0, 0.3, and 1 samples are presented. An energy splitting between the majority- and minority-spin spectra of 0.5-1.1 eV contributes to the total XANES broadening below the Néel (Curie) temperature. A small feature B3 standing approximately 6 eV above the main absorption peak is beyond the scope of single-electron calculations; it is assigned to a shake-up transition. To illustrate, the calculated Mn K edge is obtained as the convolution product of the single-electron XANES and the spectrum of many-body excitations in the Mn-O electronic states upon the sudden switching on of the Mn 1s core hole. We investigate the charge-transfer (CT) versus. Mott-Hubbard-type ground state using the Ud, Δ, and the Tdp parameters determined by previous Mn 2p x-ray photoemission spectroscopy measurements and find that LaMnO3 should be viewed as a CT-type insulator with a substantial O 2p component in the ground state. In light of these results the controversial issue of

  19. Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Jnctions

    DTIC Science & Technology

    2001-04-01

    Perovskite Manganite Grain Boundary Jnctions DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the following report...Mat. Res. Soc. Symp. Proc. Vol. 674 © 2001 Materials Research Society Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain...INTRODUCTION Since the discovery of colossal magnetoresistance (CMR) [I I in perovskite manganites these materials have attracted a lot of scientific

  20. Colossal magnetoresistance effect in epitaxially grown La 2/3Ca 1/3MnO 3 perovskite-like manganite thin films

    NASA Astrophysics Data System (ADS)

    Malisa, A.; Ivanov, Z.

    2005-09-01

    We report in this work, study on colossal magnetoresistance (CMR) effect in epitaxial La 2/3Ca 1/3 MnO 3 thin films grown on SrTiO 3 (0 0 1) substrates by pulsed laser deposition (PLD) technique. The films were grown on as-received SrTiO 3 substrates and on SrTiO 3 substrates prepared by HF etching (Koster et al., Appl. Phys. Lett. 73 (1998) 2920; V. Leca et al., Wet etching methods for perovskite substrates, University of Twente, MESA+ Research Institute, Low Temperature Division). Two of the samples were annealed in different conditions to investigate the films heat treatment effect on electric and magnetic properties. Electrical resistance was done using the four-probe method at temperatures in the range of 2-375 K without a magnetic field and in an external field of 5 T applied in the film plane. Resistance-magnetic field ( R vs. H) at 77 K for the two annealed samples was done in a 5 T sweep magnetic field. The surface morphology and structural information of the films were obtained using atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. Secondary ion mass spectroscopy (SIMS) analysis was performed on the annealed samples to investigate any possible chemical reaction between La 2/3Ca 1/3MnO 3 thin films and SrTiO 3 substrate.

  1. Spin and orbital order separation in colossal magnetoresistive transition

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Burkhardt, M. H.; Weschke, E.; Schierle, E.; Golden, M. S.; Tomioka, Y.; Tokura, Y.; StöHr, J.; D&üRr, H. A.

    2013-03-01

    Understanding the Colossal magnetoresistive (CMR) process in manganites is one of the grand challenges of modern physics. While the metallic ferromagnetic phase is relatively well understood, the triggering mechanism of the metal-insulator transition is not clear and it is believed that lattice strain in term of polarons play an important role in the mysterious insulating phase. Lattice strain occurs in the charge-orbitally ordered insulating phase via the Jahn-Teller type distortion and therefore, to understand the CMR it is critical to understand the interplay of ferromagnetism and orbital order during the CMR transition itself. In this letter, with high magnetic field dependent Resonant Soft X-ray Scattering measurements, we show that during the CMR process, an insulating antiferromagnetic phase, which is extremely susceptible to magnetic field and temperature, directly competes with metallic ferromagnetism while the robust CE type spin and orbitally ordered regions act as a catalyst to seed these antiferromagnetic regions. This allows us to construct a picture of the competing forces at the heart of CMR.

  2. Anomalously large anisotropic magnetoresistance in a perovskite manganite.

    PubMed

    Li, Run-Wei; Wang, Huabing; Wang, Xuewen; Yu, X Z; Matsui, Y; Cheng, Zhao-Hua; Shen, Bao-Gen; Plummer, E Ward; Zhang, Jiandi

    2009-08-25

    The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La(0.69)Ca(0.31)MnO(3), leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a "colossal" AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto- and electronic-crystalline couplings.

  3. Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition

    DOE PAGES

    Zhu, M.; Peng, J.; Zou, T.; ...

    2016-05-25

    Here, we present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca3Ru2O7. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systemsmore » other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.« less

  4. Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition

    SciTech Connect

    Zhu, M.; Peng, J.; Zou, T.; Prokes, K.; Mahanti, S. D.; Hong, Tao; Mao, Z. Q.; Liu, G. Q.; Ke, X.

    2016-05-25

    Here, we present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca3Ru2O7. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.

  5. Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition

    SciTech Connect

    Zhu, M.; Peng, J.; Zou, T.; Prokes, K.; Mahanti, S. D.; Hong, Tao; Mao, Z. Q.; Liu, G. Q.; Ke, X.

    2016-05-25

    Here, we present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca3Ru2O7. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.

  6. Magnetic mesocrystal-assisted magnetoresistance in manganite.

    PubMed

    Yang, Jan-Chi; He, Qing; Zhu, Yuan-Min; Lin, Jheng-Cyuan; Liu, Heng-Jui; Hsieh, Ying-Hui; Wu, Ping-Chun; Chen, Yen-Lin; Lee, Shang-Fan; Chin, Yi-Ying; Lin, Hong-Ji; Chen, Chien-Te; Zhan, Qian; Arenholz, Elke; Chu, Ying-Hao

    2014-11-12

    Mesocrystal, a new class of crystals as compared to conventional and well-known single crystals and polycrystalline systems, has captured significant attention in the past decade. Recent studies have been focused on the advance of synthesis mechanisms as well as the potential on device applications. In order to create further opportunities upon functional mesocrystals, we fabricated a self-assembled nanocomposite composed of magnetic CoFe2O4 mesocrystal in Sr-doped manganites. This combination exhibits intriguing structural and magnetic tunabilities. Furthermore, the antiferromagnetic coupling of the mesocrystal and matrix has induced an additional magnetic perturbation to spin-polarized electrons, resulting in a significantly enhanced magnetoresistance in the nanocomposite. Our work demonstrates a new thought toward the enhancement of intrinsic functionalities assisted by mesocrystals and advanced design of novel mesocrystal-embedded nanocomposites.

  7. Unidirectional Anisotropy in Manganite Based Ferromagnetic-Antiferromagnetic Multilayers

    DTIC Science & Technology

    2000-01-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADPO 11814 TITLE: Unidirectional Anisotropy in Manganite Based...component part numbers comprise the compilation report: ADPO11800 thru ADP011832 UNCLASSIFIED UNIDIRECTIONAL ANISOTROPY IN MANGANITE BASED FERROMAGNETIC...Introduction In mixed valence manganites a large negative magnetoresistance (MR), termed colossal magnetoresistance [1] (CMR), can be obtained due to a

  8. Relation between giant volume magnetostriction, colossal magnetoresistance, and crystal lattice softening in manganites La{sub 1-x}A{sub y}MnO{sub 3} (A = Ca, Ag, Ba, Sr)

    SciTech Connect

    Koroleva, L. I. Demin, R. V.; Kozlov, A. V.; Zashchirinskii, D. M.; Mukovskii, Ya. M.

    2007-02-15

    Giant volume magnetostriction (GVM) is detected near the Curie temperature T{sub C} in La{sub 1-x}A{sub x}MnO{sub 3} single crystals (A = Ca, Sr, Ba, 0.1 {<=} x {<=} 0.3) and above T{sub C} in La{sub 1-x}Ag{sub y}MnO{sub 3} (x = y = 0.15, 0.2 and x = 0.2, y = 0.1) ceramics (in the latter system, giant volume magnetostriction attains a value of 6.5 x 10{sup -4} in a magnetic field of 8.2 kOe). The behavior of GVM and colossal magnetoresistance (CMR) is found to be the same: both quantities have negative values, the temperature dependences of their absolute values pass through a peak, and the isotherms do not exhibit saturation up to the maximal measuring fields of 130 kOe. In compounds with compositions La{sub 0.7}Ba{sub 0.3}MnO{sub 3} and La{sub 0.85}Ag{sub 0.15}MnO{sub 3}, GVM and CMR were observed at room temperatures (in a magnetic field of 8.2 kOe, GVM attains values of 2.54 x 10{sup -4} and 2 x 10{sup -4} and CMR is equal to 11.6 and 11.2%, respectively). Both phenomena are attributed to the presence of a magnetic (ferromagnetic-antiferromagnetic) two-phase state in these systems, which is associated with a strong s-d exchange. It is found that the maximum value of the GVM in single crystals of La{sub 1-x}A{sub x}MnO{sub 3} (A = Ba, Sr, Ca, Ag) depends on the radius R{sub A} of cation A (it is the higher, the larger the difference |R{sub A}-R{sub LA{sup 3}{sup +}}|). The only exception is the compound with A = Ag, in which the pattern is complicated by additional defectiveness. Local disorder in the La{sub 1-x}A{sub x} sublattice, which is associated with the presence of cations with different radii, leads to a displacement of oxygen ions and to crystal lattice softening. The exchange s-d interactions in La{sub 1-x}A{sub x}MnO{sub 3} (A = Ca, Sr, Ba, Ag) are found to be comparable with electrostatic interactions ensuring the existence of the crystal; this facilitates manifestation of the GVM.

  9. Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Solin, N. I.; Romashev, L. N.; Naumov, S. V.; Saranin, A. A.; Zotov, A. V.; Olyanich, D. A.; Kotlyar, V. G.; Utas, O. A.

    2016-02-01

    We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered-layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p- n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2-3 orders of magnitude.

  10. Griffiths phase and colossal magnetoresistance in Nd0.5Sr0.5MnO3 oxygen-deficient thin films

    NASA Astrophysics Data System (ADS)

    Solin, N. I.; Korolyov, A. V.; Medvedev, Yu. V.; Nikolaenko, Yu. M.; Khokhlov, V. A.; Prokhorov, A. Yu.; Levchenko, G. G.

    2013-05-01

    This work is devoted to study the influence of the Griffiths phase in colossal magnetoresistance manganites. Griffiths-phase-like behavior of the paramagnetic susceptibility χ0 is observed in Nd0.5Sr0.5MnO3 oxygen-deficient thin films fabricated by magnetron sputtering deposition. In Nd0.5Sr0.5MnO3-δ films with oxygen deficiency for ТG≈260-280 K>T>TC=138 K (ТG and ТС—Griffiths and Curie temperatures, respectively), paramagnetic matrix consists of a magnetic phase with short-range order (˜1-1.5 nm) (which is responsible for the colossal magnetoresistance (CMR) above ТС), and is embedded in this matrix region with long-range ferromagnetic order (≫10 nm), responsible for the Griffiths phase-like behavior of the paramagnetic susceptibility. Electrical resistivity is caused by carrier tunneling between the localized states and obeys the Efros-Shklovskii law. Magnetic resistivity is caused by change of the localized state sizes under the magnetic field. The temperature and magnetic field dependencies of size of the phase inhomogeneity inclusions, found from measurements of magneto-transport properties, can be satisfactorily described by the model of thermodynamic phase separation into metallic droplets of small radius in a paramagnetic matrix. Intrinsic nanoscale inhomogeneities caused by thermodynamic phase separation, rather than the Griffiths phase, determine the electrical resistivity and colossal magnetoresistance of the films. In half-doped manganites, the nature of long-range ordered magnetic phases may be related, besides the chemical heterogeneity, to proximity to a ferromagnetic-antiferromagnetic boundary at the phase diagram as well. The results are in good agreement with the model of existence of an analog of Griffiths phase temperature in half-doped manganites.

  11. Colossal magnetoresistivity in manganese-based perovskites (invited) (abstract)

    NASA Astrophysics Data System (ADS)

    Ramesh, R.; Venkatesan, T.; Ogale, S. B.; Greene, R. L.; Bhagat, S. M.

    1996-04-01

    Magnetoresistivity values of the order of 106% (and in some cases even higher) have been obtained in epitaxial AxB1-xMnO3-y (A=La,Nd; B=Ca,Sr,Ba) thin films grown by pulsed laser deposition. Ferromagnetic resonance experiments suggest a granular-type behavior with conducting ferromagnetic regions (Rcond<10 mΩ cm) in a less conducting matrix (Rinsulazting≳100.Rcond). Ion channeling experiments over a range of temperatures clearly reveal the existence of structural distortion at the peak resistivity temperature TP. Systematic studies of samples prepared under a variety of oxygenation conditions show that the resistivity above TP can be modeled with a single functional form: Rcond≊eΔ/kT, where Δ, the activation energy, is of the order of 50-200 meV. This suggests that these different samples represent the same basic material in a semiconducting matrix, with differing volume fractions of the two components which depends on the processing conditions. These ``colossal'' values of MR have been obtained at temperatures lower than room temperature and at fields of the order of a few Teslas, both of which are impediments to the development of viable MR sensor and nonvolatile storage technologies. We are therefore addressing the critical scientific and technological issues through a variety of materials integration approaches. Using structural chemistry and lattice matching as fundamental guiding principles, we are growing epitaxial heterostructure superlattices consisting of the CMR oxides interleaved with magnetic perovskites such as La-Sr-Co-O (metallic ferromagnet), rare earth-Fe-O (ferromagnetic insulator). We are also exploring the possibility of using the semiconducting properties of these materials in an all-perovskite field effect transistor device. In this presentation, we will describe our progress to date on these studies to enhance the field and temperature dependence of the MR properties and explore new device architectures that utilize the inherently

  12. Time-resolved optical studies of colossal magnetoresistance and charge-density wave materials

    NASA Astrophysics Data System (ADS)

    Ren, Yuhang

    This thesis presents measurements of collective modes and ultrafast carrier relaxation dynamics in charge-density-wave (CDW) conductors and colossal magnetoresistance (CMR) manganites. A femtosecond laser pump pulse excites a broad frequency spectrum of low-energy collective modes and electron-hole pairs thereby changing its optical properties. The low-energy collective excitations and quasiparticle relaxation and recombination processes are monitored by measuring the resulting photoinduced absorption as a function of probe pulse wavelength and time delay. A general model was developed for the photogeneration and detection mechanism of collective modes based on light absorption in two-color pump-probe experiments. A broad spectrum of collective modes (phasons and amplitudons) with frequencies down to a few GHz is excited and propagates normal to the surface into the material. The dispersion of the long-wavelength phason and amplitudon can be measured by changing the probe wavelength. The first pump-probe spectroscopy was performed from the ultraviolet to mid-infrared wavelength range to study low-frequency collective excitations, including temperature evolution, dispersion, damping, and anisotropy of amplitude mode and transverse phason in quasi-one dimensional CDW conductors, K 0.3MoO3 and K0.33MoO3 on ultrafast time scale. The transverse phason exhibits an acoustic-like dispersion relation in the frequency range from 5--40 GHz. The phason velocity is strongly anisotropic with a very weak temperature dependence. In contrast, the amplitude mode exhibits a weak (optic-like) dispersion relation with a frequency of 1.66 THz at 30 K. The studies were extended to doped perovskite manganite thin films and single crystals. A low-energy collective mode is observed and discussed in terms of the opening of a pseudogap resulting from charge/orbital ordering phases. The softening of the collective mode is necessary to explain by combining a cooperative Jahn-Teller type

  13. Diagnostics of ``colossal'' magnetoresistance manganite films by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Podobedov, V. B.; Romero, D. B.; Weber, A.; Rice, J. P.; Schreekala, R.; Rajeswari, M.; Ramesh, R.; Venkatesan, T.; Drew, H. D.

    1998-11-01

    Polarized Raman scattering by phonons is used to characterize thin films prepared by laser ablation of La1-xCaxMnO3 targets. It was found that, in the temperature range from 6 to 300 K, phonon spectra of La0.7Ca0.3MnO3 films exhibit observable differences from those in bulk materials (microcrystalline ceramics and single crystals). A significant difference was found in the spectra of "as-grown" films compared to those annealed in oxygen at 800 °C. The observed Raman peaks and their linewidths exhibit an irregular temperature dependence near Tc. A correlation of Raman data with magnetization of the sample was also found.

  14. Electronic confinement and ordering instabilities in colossal magnetoresistive bilayer manganites.

    PubMed

    Trinckauf, J; Hänke, T; Zabolotnyy, V; Ritschel, T; Apostu, M O; Suryanarayanan, R; Revcolevschi, A; Koepernik, K; Kim, T K; Zimmermann, M V; Borisenko, S V; Knupfer, M; Büchner, B; Geck, J

    2012-01-06

    We present angle-resolved photoemission studies of (La{1-z}Pr{z}){2-2x}Sr{1+2x}Mn{2}O{7} with x=0.4 and z=0.1, 0.2, and 0.4 along with density functional theory calculations and x-ray scattering data. Our results show that the bilayer splitting in the ferromagnetic metallic phase of these materials is small, if not completely absent. The charge carriers are therefore confined to a single MnO{2} layer, which in turn results in a strongly nested Fermi surface. In addition to this, the spectral function also displays clear signatures of an electronic ordering instability well below the Fermi level. The increase of the corresponding interaction strength with z and its magnitude of ∼400  meV make the coupling to a bare phonon highly unlikely. Instead we conclude that fluctuating order, involving electronic and lattice degrees of freedom, causes the observed renormalization of the spectral features.

  15. Anomalously large anisotropic magnetoresistance in a perovskite manganite

    PubMed Central

    Li, Run-Wei; Wang, Huabing; Wang, Xuewen; Yu, X. Z.; Matsui, Y.; Cheng, Zhao-Hua; Shen, Bao-Gen; Plummer, E. Ward; Zhang, Jiandi

    2009-01-01

    The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La0.69Ca0.31MnO3, leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a “colossal” AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto- and electronic-crystalline couplings. PMID:19706504

  16. Current dependence of colossal anisotropic magnetoresistance in La 0.3 Pr 0.4 Ca 0.3 MnO 3 microbridges

    NASA Astrophysics Data System (ADS)

    Jeon, J.; Jung, J.; Chow, K. H.

    2016-09-01

    The effect of the bias current on the in-plane colossal anisotropic magnetoresistance (C-AMR) is investigated in spatially confined La 0.3 Pr 0.4 Ca 0.3 MnO 3 microbridges. Dramatic increases of the C-AMR are found when the bias current is reduced. For example, in one of the samples, the C-AMR changed from ˜900% to over ˜24 000% as the current is decreased from 1 μA to 10 nA. The results indicate that the bias current can be used to manipulate the C-AMR in spatially confined manganite thin films via changes to the nature of the anisotropic percolation within the samples.

  17. Lattice strain accompanying the colossal magnetoresistance effect in EuB6.

    PubMed

    Manna, Rudra Sekhar; Das, Pintu; de Souza, Mariano; Schnelle, Frank; Lang, Michael; Müller, Jens; von Molnár, Stephan; Fisk, Zachary

    2014-08-08

    The coupling of magnetic and electronic degrees of freedom to the crystal lattice in the ferromagnetic semimetal EuB(6), which exhibits a complex ferromagnetic order and a colossal magnetoresistance effect, is studied by high-resolution thermal expansion and magnetostriction experiments. EuB(6) may be viewed as a model system, where pure magnetism-tuned transport and the response of the crystal lattice can be studied in a comparatively simple environment, i.e., not influenced by strong crystal-electric field effects and Jahn-Teller distortions. We find a very large lattice response, quantified by (i) the magnetic Grüneisen parameter, (ii) the spontaneous strain when entering the ferromagnetic region, and (iii) the magnetostriction in the paramagnetic temperature regime. Our analysis reveals that a significant part of the lattice effects originates in the magnetically driven delocalization of charge carriers, consistent with the scenario of percolating magnetic polarons. A strong effect of the formation and dynamics of local magnetic clusters on the lattice parameters is suggested to be a general feature of colossal magnetoresistance materials.

  18. Role of excess manganese in the formation of properties of nanometer-sized manganite powders

    NASA Astrophysics Data System (ADS)

    Akimov, G. Ya.; Novokhatska, A. A.

    2016-06-01

    It has been revealed for the first time that the introduction of excess manganese to a charge when preparing nanometer-sized manganite powders exhibiting the colossal magnetoresistance effect leads to the formation of a single-phase material with the crystallite sizes 15-25 nm that are two time smaller than those in manganite powders produced without excess manganese.

  19. Spin Seebeck Effect and Thermal Colossal Magnetoresistance in Graphene Nanoribbon Heterojunction

    PubMed Central

    Ni, Yun; Yao, Kailun; Fu, Huahua; Gao, Guoying; Zhu, Sicong; Wang, Shuling

    2013-01-01

    Spin caloritronics devices are very important for future development of low-power-consumption technology. We propose a new spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of single-hydrogen-terminated ZGNR (ZGNR-H) and double-hydrogen-terminated ZGNR (ZGNR-H2). We predict that spin-up and spin-down currents flowing in opposite directions can be induced by temperature difference instead of external electrical bias. The thermal spin-up current is considerably large and greatly improved compared with previous work in graphene. Moreover, the thermal colossal magnetoresistance is obtained in our research, which could be used to fabricate highly-efficient spin caloritronics MR devices. PMID:23459307

  20. Spin seebeck effect and thermal colossal magnetoresistance in graphene nanoribbon heterojunction.

    PubMed

    Ni, Yun; Yao, Kailun; Fu, Huahua; Gao, Guoying; Zhu, Sicong; Wang, Shuling

    2013-01-01

    Spin caloritronics devices are very important for future development of low-power-consumption technology. We propose a new spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of single-hydrogen-terminated ZGNR (ZGNR-H) and double-hydrogen-terminated ZGNR (ZGNR-H2). We predict that spin-up and spin-down currents flowing in opposite directions can be induced by temperature difference instead of external electrical bias. The thermal spin-up current is considerably large and greatly improved compared with previous work in graphene. Moreover, the thermal colossal magnetoresistance is obtained in our research, which could be used to fabricate highly-efficient spin caloritronics MR devices.

  1. Spin correlations and colossal magnetoresistance in HgCr2Se4

    NASA Astrophysics Data System (ADS)

    Lin, Chaojing; Yi, Changjiang; Shi, Youguo; Zhang, Lei; Zhang, Guangming; Müller, Jens; Li, Yongqing

    2016-12-01

    This study aims to unravel the mechanism of colossal magnetoresistance (CMR) observed in n -type HgCr2Se4 , in which low-density conduction electrons are exchange-coupled to a three-dimensional Heisenberg ferromagnet with a Curie temperature TC≈105 K. Near room temperature the electron transport exhibits an ordinary semiconducting behavior. As temperature drops below T*≃2.1 TC , the magnetic susceptibility deviates from the Curie-Weiss law, and concomitantly the transport enters an intermediate regime exhibiting a pronounced CMR effect before a transition to metallic conduction occurs at T

  2. Size effect on the colossal thermoelectric power in charge ordered small band width manganites based on Gd-Sr

    NASA Astrophysics Data System (ADS)

    Joy, Lija K.; Singh, Durgesh; Sudeep, P. M.; Ganesan, V.; Ajayan, P. M.; Thomas, Senoy; Anantharaman, M. R.

    2015-05-01

    Earlier we observed colossal thermoelectric power in charge ordered intermediate band width manganite La0.5Ca0.5MnO3 and was explained based on charge ordering and occurrence of spin glass states. With a view to extending such a study on small band width Gd-Sr manganites, both unmilled and milled forms of Gd1-xSrxMnO3 (x = 0.3, 0.5, and 0.6) samples were prepared. Nano forms of Gd1-xSrxMnO3 were prepared by high energy ball milling. All compositions, both milled and unmilled forms, exhibited colossal thermoelectric power. The absolute value of thermoelectric power almost doubled in the case of milled samples and attained a maximum value of -69 mV K-1 at 42 K, where a spin glass transition takes place. In order to explain the occurrence of transition at ˜42 K, field cooling and zero-field cooling magnetic measurements were conducted and we found that the peak value of thermoelectric power is observed at the same magnetic ordering temperature. The results are further modelled using Mandal’s model by incorporating Kondo properties of spin glass along with magnon scattering.

  3. Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite

    PubMed Central

    David, Adrian; Tian, Yufeng; Yang, Ping; Gao, Xingyu; Lin, Weinan; Shah, Amish B.; Zuo, Jian-Min; Prellier, Wilfrid; Wu, Tom

    2015-01-01

    Modulation of resistance by an external magnetic field, i.e. magnetoresistance effect, has been a long-lived theme of research due to both fundamental science and device applications. Here we report colossal positive magnetoresistance (CPMR) (>30,000% at a temperature of 2 K and a magnetic field of 9 T) discovered in degenerate semiconducting strontium titanite (SrTiO3) single crystals capped with ultrathin SrTiO3/LaAlO3 bilayers. The low-pressure high-temperature homoepitaxial growth of several unit cells of SrTiO3 introduces oxygen vacancies and high-mobility carriers in the bulk SrTiO3, and the three-unit-cell LaAlO3 capping layer passivates the surface and improves carrier mobility by suppressing surface-defect-related scattering. The coexistence of multiple types of carriers and inhomogeneous transport lead to the emergence of CPMR. This unit-cell-level surface engineering approach is promising to be generalized to others oxides, and to realize devices with high-mobility carriers and interesting magnetoelectronic properties. PMID:25975606

  4. Positive magnetoresistance of single-crystal bilayer manganites (La{sub 1−z}Nd{sub z}){sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} (z = 0, 0.1)

    SciTech Connect

    Shaykhutdinov, K. A.; Petrov, M. I.; Terent'ev, K. I.; Semenov, S. V.; Popkov, S. I.; Nikitin, S. E.

    2015-04-28

    We investigate magnetoresistance, ρ{sub c}, of single-crystal bilayer lanthanum manganites (La{sub 1−z}Nd{sub z}){sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} (z = 0 and 0.1) at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La{sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab sample plane at the temperatures T < 60 K, along with the negative magnetoresistance typical of all the substituted lanthanum manganites. In the (La{sub 0.9}Nd{sub 0.1}){sub 1.4}Sr{sub 1.6}Mn{sub 2}O{sub 7} sample, the positive magnetoresistance effect is observed at temperatures of 60–80 K in an applied field parallel to the c axis. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.

  5. Magnetically induced nonvolatile magnetoresistance and resistance memory effect in phase-separated manganite thin films

    NASA Astrophysics Data System (ADS)

    Li, Qian; Cao, Qingqi; Wang, Dunhui; Du, Youwei

    2017-03-01

    We report the observation of magnetically induced resistance memory effect in a typical electronic phase-separated manganite La5/8‑x Pr x Ca3/8MnO3 (x  =  0.3) thin film. In the hysteresis region of metal-to-insulator transition, the resistance exhibits a sharp drop with the application of magnetic field and maintains the low resistance state after the removal of field, showing a nonvolatile magnetoresistance effect. The high resistance state can be recovered until the temperature is warmed. More explicit measurements at the hysteresis region exhibit the non-volatility and irreversibility of magnetoresistance, which can be ascribed to the percolative feature in the electronic phase-separated manganite. The origin and potential applications of these interesting effects are discussed.

  6. Probing dynamics of complex ordered phases in colossal magnetoresistive transition-metal oxides using coherent resonant soft x-ray scattering

    NASA Astrophysics Data System (ADS)

    Turner, Joshua J.

    A growing interest in the physics of complex systems such as in the transition-metal oxide family has exploded recently, especially in the last 20 years or so. One notable effect is the change in electrical resistivity of a system by orders of magnitude in an applied magnetic field, coined the "colossal magnetoresistance effect". In efforts to understand these types of effects, there has been an unveiling of a rich variety of phenomena in the field of strongly correlated electron physics that has come to dominate the current scientific times. Most notable is the competition of myriad types of order: magnetic, lattice, charge and orbital all self-organize to display a fascinating array of phases on a variety of length scales. Furthermore, it has become apparent that new probes are needed to grasp some of this physics that transcends current condensed matter theory, where much of the behavior of these types of systems has remained unexplored. We have developed a new technique to gain more information about the system than with conventional x-ray diffraction. By scattering highly coherent, low energy x-rays, we can measure manganite speckle: a "fingerprint' of the microscopic structure in the bulk. The coherence of the x-rays can further be used to elucidate new insight into the dynamics of these phases. We describe here a number of novel effects near the orbital order phase transition in a half-doped manganite. We observe a small fluctuating component in the scattered signal that is correlated with three effects: both a rapidly decreasing total signal and orbital domain size, as well as an abrupt onset of a broad background intensity that we attribute to the thermal production of correlated polarons. Our results suggest that the transition is characterized by a competition between a pinned orbital domain topology that remains static, and mobile domain boundaries that exhibit slow, spatiotemporal fluctuations. This study opens up a new chapter to the study of

  7. Angle-resolved photoemission studies on bi-layer colossal magnetoresistive oxides lanthanum(2-2x)strontium(1+2x)manganese(2)oxide(7)

    NASA Astrophysics Data System (ADS)

    Sun, Zhe

    In recent years the studies of manganites have flourished initially because of their Colossal Magnetoresistance (CMR) effect. However the scientific community quickly realized that the fundamental physics is abundant, exotic and challenging. Strong correlations of charge, lattice, spin and orbital degrees of freedom have been found to be responsible for many interesting physical phenomena. Of manganites, La2-2xSr 1+2xMn2O 7 has naturally layered crystal structure. The reduced two-dimensional character amplifies fluctuations of electronic, magnetic, and orbital degrees of freedom and interactions of them, which provides good opportunities for an understanding of the rich physics in manganites. In crystals, electrons have intrinsic charge, spin and orbital degrees of freedom, and the electron-phonon interaction has been an active topic for many decades, thus studies of electrons will definitely shed light on important physics in manganites. Angle-resolved photoemission spectroscopy (ARPES) is an ideal probe of electrons, and so by performing ARPES measurements on La2-2 xSr1+2xMn2 O7 we have obtained abundant knowledge of the physics of strong correlations of various degrees of freedom. We have made many new discoveries by exploring the physics in this com-pound. For the first time we resolved bi-layer split band structure of the prototype of bi-layer manganites, which was predicted by theoretical calculations long time ago. We observed minority-spin states in La2-2 xSr1+2xMn 2O7 (x = 0.36--0.39), which gives direct evidence that this system is not a half-metal in this doping iv range. We gave the first direct measurement of electron-phonon coupling strength in manganites and identified the phonon branches to which electrons couple. In addition to band insulator and Mott insulator there is another type of insulator, in which metallic domains and insulating domains coexist and phase separation and percolation effect play important roles in the metal

  8. Atomic scale studies of La/Sr ordering in colossal magnetoresistant La2-2xSr1+2xMn2O7 single crystals

    SciTech Connect

    Roldan, Manuel A.; Oxley, Mark P.; Li, Qing'an A.; Zheng, Hong; Gray, Kenneth E.; Mitchell, John F.; Pennycook, Stephen J.; Varela, Maria

    2014-09-29

    In this study, it is unclear whether chemical order (or disorder) is in any way connected to double exchange, electronic phase separation, or charge ordering (CO) in manganites. In this work, we carry out an atomic resolution study of the colossal magnetoresistant manganite La2–2xSr1+2xMn2O7 (LSMO). We combine aberration-corrected electron microscopy and spectroscopy with spectroscopic image simulations, to analyze cation ordering at the atomic scale in real space in a number of LSMO single crystals. We compare three different compositions within the phase diagram: a ferromagnetic metallic material (x=0.36), an insulating, antiferromagnetic charge ordered (AF-CO) compound (x=0.5), which also exhibits orbital ordering, and an additional AF sample (x=0.56). Detailed image simulations are essential to accurately quantify the degree of chemical ordering of these samples. We find a significant degree of long-range chemical ordering in all cases, which increases in the AF-CO range. However, the degree of ordering is never complete nor can it explain the strongly correlated underlying ordering phenomena. Our results show that chemical ordering over distinct crystallographic sites is not needed for electronic ordering phenomena to appear in manganites, and cannot by itself explain the complex electronic behavior of LSMO.

  9. Atomic scale studies of La/Sr ordering in colossal magnetoresistant La2-2xSr1+2xMn2O7 single crystals

    DOE PAGES

    Roldan, Manuel A.; Oxley, Mark P.; Li, Qing'an A.; ...

    2014-09-29

    In this study, it is unclear whether chemical order (or disorder) is in any way connected to double exchange, electronic phase separation, or charge ordering (CO) in manganites. In this work, we carry out an atomic resolution study of the colossal magnetoresistant manganite La2–2xSr1+2xMn2O7 (LSMO). We combine aberration-corrected electron microscopy and spectroscopy with spectroscopic image simulations, to analyze cation ordering at the atomic scale in real space in a number of LSMO single crystals. We compare three different compositions within the phase diagram: a ferromagnetic metallic material (x=0.36), an insulating, antiferromagnetic charge ordered (AF-CO) compound (x=0.5), which also exhibits orbitalmore » ordering, and an additional AF sample (x=0.56). Detailed image simulations are essential to accurately quantify the degree of chemical ordering of these samples. We find a significant degree of long-range chemical ordering in all cases, which increases in the AF-CO range. However, the degree of ordering is never complete nor can it explain the strongly correlated underlying ordering phenomena. Our results show that chemical ordering over distinct crystallographic sites is not needed for electronic ordering phenomena to appear in manganites, and cannot by itself explain the complex electronic behavior of LSMO.« less

  10. Magnetic force microscopy of colossal magneto-resistive materials and superconductors

    NASA Astrophysics Data System (ADS)

    Lu, Qingyou

    Using a home-built low temperature piezo-driven magnetic force microscope (LT-PD-MFM), we have studied the magnetic domain behaviors in colossal magneto-resistive (CMR) thin films, the vortex behavior in high TC superconducting (HTCS) thin films as well as the localized penetration depth in a Yttrium(1)Barium(2)Copper(3)Oxygen(7) single crystal. We have obtained MFM images of domains in CMR films for temperatures from close to TC to far below TC. Domains behave differently for these two temperature zones. Well below TC, neighboring domains exhibit strong interdomain coupling. External magnetic fields can split domains more easily than rearrange them. As temperature increases, domain interactions become weaker with a reduced magnetization, and are subject to moving, splitting or merging. They are still traceable in the presence of a sample scratch. As temperature drops from TC, domains increase in magnetization. The weak interdomain interactions and high fluctuations make domain tracing impossible if there are no topographic defects. Sample scratches tend to pin domains for T ˜ TC. Current flow in CMR films can split domains. This splitting can be both reversible and irreversible when current is turned on and off. Lattice mismatch between a CMR film and a substrate leads to a stress that results in smaller domains. The magnetization of these smaller domains does not cancel out, resulting in "large-scale" domains if detected from a longer distance from the sample. Images of superconducting vortices in BSSCO films show that they grow with temperature, which is compared with the theory. The theory fits our experimental data well. We also measured the gradient of the levitation force between a magnetic tip and a superconducting single crystal as a function of the tip-sample distance. A series of these measurements were performed at different temperatures. By comparing these data with the theory in which the penetration depth lambda and the TC are parameters to be

  11. Ru(4+) induced colossal magnetoimpedance in Ru doped perovskite manganite at room temperature.

    PubMed

    Singh, Brajendra

    2016-05-14

    We have demonstrated Ru(4+) induced colossal magnetoimpedance (MI) at room temperature in a ∼1 Tesla magnetic field with a pulsed laser deposited La0.7Ca0.3Mn0.7Ru0.3O3 thin film. This composition showed a large negative ∼12% MI in the low frequency range (<5 MHz), a colossal positive MI > 120% in the intermediate frequency range (5 MHz to ∼13 MHz) and a negative MI in the high frequency range (∼13 MHz to 40 MHz) at room temperature. XAS data confirmed the predominant Ru valence state was 4+ in La0.7Ca0.3Mn0.7Ru0.3O3. Ru(4+) induced (i) charge carrier localization and (ii) reduced hole carrier density enhances the MI in this composition, which otherwise was not significant in mixed valences Mn(3+)/Mn(4+) containing La0.7Ca0.3MnO3 and Ru(4+)/Ru(5+) and Mn(3+)/Mn(4+) mixed valences containing Ru = 0.1 and Ru = 0.2 compositions in La0.7Ca0.3Mn1-xRuxO3 (0 ≤x≤ 0.3) thin films.

  12. Microstructure evolution and magnetoresistance of the A-site ordered Ba-doped manganites

    SciTech Connect

    Trukhanov, S. V. Lobanovski, L. S.; Bushinsky, M. V.; Khomchenko, V. A.; Fedotova, V. V.; Troyanchuk, I. O.; Szymczak, H.

    2007-05-15

    The microstructure, crystal structure, and magnetotransport properties of microsized and nanosized Badoped manganites have been investigated. A 'two-step' reduction-reoxidation procedure has been used to obtain nanosized ceramic manganite Nd{sub 0.70}Ba{sub 0.30}MnO{sub 3} (II). The parent microsized manganite Nd{sub 0.70}Ba{sub 0.30}MnO{sub 3} (I) was prepared by usual ceramic technology in air. Then the sample was annealed in vacuum. The grain size of the reduced sample, determined by scanning electron microscopy, decreased from {approx}5 {mu}m down to {approx}100 nm. To obtain the oxygen stoichiometry nanosized sample, the Nd{sub 0.70}Ba{sub 0.30}MnO{sub 2.60} was again annealed in air. It is established that the (I) sample is a pseudocubic perovskite, whereas (II) is tetrahedral as a consequence of Nd{sup 3+} and Ba{sup 2+} ions as well as the ordering of oxygen vacancies. The (I) sample is a ferromagnet with T{sub C} {approx} 140 K. It has metal-insulator transition at T{sub MI} {approx} 135 K and a peak of magnetoresistance {approx}50% in a field of 9 kOe. For the (II) sample, the critical points of phase transitions move to higher temperatures, T{sub C} {approx} 320 K and T{sub MI} {approx} 310 K. The magnetoresistance of the (II) sample at room temperature (T {approx} 293 K) is about 7% in a field of 9 kOe. The magnetotransport properties are interpreted in the framework of the nanosized effect.

  13. Colossal terahertz magnetoresistance at room temperature in epitaxial La0.7Sr0.3MnO3 nanocomposites and single-phase thin films

    DOE PAGES

    Lloyd-Hughes, James; Mosley, C. D. W.; Jones, S. P. P.; ...

    2017-03-13

    Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La0.7Sr0.3MnO3. At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free pathmore » was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. As a result, the VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.« less

  14. Temperature-controlled colossal magnetoresistance and perfect spin Seebeck effect in hybrid graphene/boron nitride nanoribbons.

    PubMed

    Zhu, Lin; Li, Ruimin; Yao, Kailun

    2017-02-01

    Thermal spin transport properties of graphene and hexagonal boron nitride nanoribbon heterojunctions have been investigated using density functional theory calculations combined with the Keldysh nonequilibrium Green's function approach. The results showed that the perfect spin Seebeck effect and analogy negative differential thermoelectric resistance occurred in the device under a temperature difference without a gate or bias voltage. An intriguing thermally induced colossal magnetoresistance without gate regulation was also observed, which can be switched between a positive and negative value with temperature control. It was also found that the unit number of zigzag graphene nanoribbons and boron nitride nanoribbons can tune the electronic band structure and the energy gap of the heterostructure, and then modulate the thermal spin transport properties. The results suggest that graphene and hexagonal boron nitride nanoribbon heterostructures may have potential applications in graphene-based nanodevices.

  15. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

    SciTech Connect

    Werner, R.; Kleiner, R.; Koelle, D.; Petrov, A. Yu.; Davidson, B. A.; Mino, L. Alvarez

    2011-04-18

    We report resistance versus magnetic field measurements for a La{sub 0.65}Sr{sub 0.35}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.65}Sr{sub 0.35}MnO{sub 3} tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches {approx}1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

  16. Correlation between vacancies and magnetoresistance changes in FM manganites using the Monte Carlo method

    NASA Astrophysics Data System (ADS)

    Agudelo-Giraldo, J. D.; Restrepo-Parra, E.; Restrepo, J.

    2015-10-01

    The Metropolis algorithm and the classical Heisenberg approximation were implemented by the Monte Carlo method to design a computational approach to the magnetization and resistivity of La2/3Ca1/3MnO3, which depends on the Mn ion vacancies as the external magnetic field increases. This compound is ferromagnetic, and it exhibits the colossal magnetoresistance (CMR) effect. The monolayer was built with L×L×d dimensions, and it had L=30 umc (units of magnetic cells) for its dimension in the x-y plane and was d=12 umc in thickness. The Hamiltonian that was used contains interactions between first neighbors, the magnetocrystalline anisotropy effect and the external applied magnetic field response. The system that was considered contains mixed-valence bonds: Mn3+eg'-O-Mn3+eg, Mn3+eg-O-Mn4+d3 and Mn3+eg'-O-Mn4+d3. The vacancies were placed randomly in the sample, replacing any type of Mn ion. The main result shows that without vacancies, the transitions TC (Curie temperature) and TMI (metal-insulator temperature) are similar, whereas with the increase in the vacancy percentage, TMI presented lower values than TC. This situation is caused by the competition between the external magnetic field, the vacancy percentage and the magnetocrystalline anisotropy, which favors the magnetoresistive effect at temperatures below TMI. Resistivity loops were also observed, which shows a direct correlation with the hysteresis loops of magnetization at temperatures below TC.

  17. In-Plane Transport of Doped Manganite Trilayers

    DTIC Science & Technology

    2003-01-01

    Colossal magnetoresistance (CMR) materials consist of a group of doped perovskite manganites of chemical composition A1.xBxMnO 3 (where A = trivalent rare...interference device ( SQUID ) magnetometer were used to take magnetization measurements. In-plane transport measurements were taken In a physical...substrates, demonstrating the epitaxy of the trilayers. Magnetization measurements taken with a SQUID magnetometer show that LSMO has a Curie temperature

  18. Electric field induced metal-insulator transition and colossal magnetoresistance in CdCr2S4

    NASA Astrophysics Data System (ADS)

    Sun, C. P.; Lin, C. C.; Her, J. L.; Taran, S.; Chou, C. C.; Chan, C. L.; Huang, C. L.; Berger, H.; Yang, H. D.

    2008-03-01

    Multiferroic ordering existing in a single material is a recent hot topic in the field of condensed matter physics due to its potential application in device control. The chromium chalcogenide spinel CdCr2S4 is one of the attractive materials investigated by Hemberger et al. recently.[1] Based on the electrical measurement, there is no discontinuity through the ferromagnetic ordering at TC ˜ 85K.[2] We measure the temperature dependent resistance under various electric fields to investigate the electrical properties of the present material. To our knowledge, we first observe the electric field induced metal-insulator transition in this material around TC. Moreover, a colossal magnetoresistance (CMR), which is comparable to that of manganese-based CMR material, is also observed near TC. The origin for these properties is discussed. [1] J. Hemberger, P. Lunkenheimer, R. Fichtl, H.-A. Krug von Nidda, V. Tsurkan, A. Loidl, Nature 434, 364 (2006). [2] P. K. Baltzer, H. W. Lehmann, and M. Robbins, Phys. Rev. Lett. 15, 493 (1965).

  19. Intrinsic and extrinsic magnetic properties of the naturally layered manganites

    SciTech Connect

    Berger, A.; Mitchell, J. F.; Miller, D. J.; Jiang, J. S.; Bader, S. D.

    1999-11-30

    Structural and magnetic properties of the two-layered Ruddlesden-Popper phase SrO(La{sub 1{minus}x}Sr{sub x}MnO{sub 3}){sub 2} with x = 0.3--0.5 are highlighted. Intrinsic properties of these naturally layered manganites include a colossal magnetoresistance, a composition-dependent magnetic anisotropy, and almost no remanence. Above the Curie temperature there is a non-vanishing extrinsic magnetization attributed to intergrowths (stacking faults in the layered structure). These lattice imperfections consist of additional or missing manganite layers, as observed in transmission electron microscopy. Their role in influencing the properties of the host material is highlighted.

  20. The development of alkoxy-based sol-gel processing for magnetoresistive manganite thin films

    NASA Astrophysics Data System (ADS)

    Clothier, Brent Allen

    This dissertation presents, for the first time, the successful development of an all-alkoxy based, sol-gel process for integrating thin films of magnetoresistive doped-lanthanide manganites onto silicon-based substrates. Crystallization of the requisite perovskite phase at temperatures below 650°C resulted from the incorporation of all-alkoxide precursors, and in particular, Mn[OC(CH 3)3)]2. This latter precursor, when combined with the polyfunctional solvent, 2-methoxyethanol, exhibited high solubility and hydrolytic reactivity. This accomplishment represents a significant new contribution because low carbon-content manganese(II) alkoxides are stable, insoluble coordinate polymers. Orange and pinkish-orange solutions, also synthesized for the first time, were free from products of aerobic oxidation, and hence, contained no brown discoloration. A partial hydrolysis of h = 0.25 produced a polymeric sol system, conferring both spinnable viscosities and excellent sol longevity. Post-coating hydrolysis via humidified air proved essential to yield transparent, dense, and defect-free amorphous coatings. Conversion into a fine-grain, polycrystalline microstructure occurred above 600°C on platinized-Si(100) and above 650°C on Si(100). The cubic lattice parameters of the films (i.e., a = ˜ 3.90 A) were in excellent agreement with values published in the literature for bulk, polycrystalline powders. Typical grain sizes started at 10--15 nm, increasing to 20--25 nm by 750°C. For films deposited on Si(100), magnetoresistance was observed in specimens heat treated at 700°C and 750°C, and for platinized-Si(100), 650°C, 700°C, and 750°C. Magnetoresistive response improved with heat-treatment temperature for the more refractory La0.67Ba0.33MnO3 composition. The lead-doped counterpart offered the best property evolution, with TC = 320 K and TIM = 254 K by 750°C on platinized-Si(100). All corresponding transport curves were symmetric, demonstrating clear metal

  1. Anomalous Magnetoresistance in Dirty Magnetic Quantum Wells

    NASA Astrophysics Data System (ADS)

    Jaroszyński, J.; Andrearczyk, T.; Karczewski, G.; Wojtowicz, T.; Wróbel, J.; Popović, Dragana; Dietl, T.

    2006-09-01

    We report on magnetotransport in a 2D modulation doped (Cd,Mn)Te diluted magnetic semiconductor (DMS). The quantum Hall effect is observed in applied perpendicular magnetic fields, as one would expect in a high mobility 2D system. It is surprising, however, that the application of an in-plane B reveals features commonly observed in colossal magnetoresistant (CMR) materials, such as a strong negative magnetoresistance as well as dramatic and nonmonotonic changes in the zero-field resistance which coincide with the ferromagnetic ordering. These analogies suggest that the phenomena observed in DMS and manganites have a common origin — the formation of microscopic clusters.

  2. Relaxor behavior in manganites (invited)

    NASA Astrophysics Data System (ADS)

    Kimura, T.; Tokura, Y.; Kumai, R.; Okimoto, Y.; Tomioka, Y.

    2001-06-01

    The impurity (Cr3+)-doping effect on the stability of charge and orbital ordering has been systematically investigated for Nd1/2Ca1/2Mn1-yCryO3 crystals by measurements of magnetotransport and x-ray diffraction. The random field in terms of eg orbital deficiencies on the Cr sites drives the charge and orbital correlations to dynamical and short range, which is most relevant to the high-resistive state exhibiting colossal magnetoresistance. In the Cr-doped manganite, we can observe the coexistence of ferromagnetic-metallic and charge-orbital ordered phases, their spatial distributions, diffuse x-ray scattering, magnetic-field annealing, and the aging effect on the magnetic and electric properties, etc. These phenomena are reminiscent of those of relaxor ferroelectrics composed of ferroelectric clusters embedded in a paraelectric matrix. We propose that the mixed-valent manganite can be viewed as a "magneto- and electrorelaxor."

  3. Wigner Crystal and Colossal Magnetoresistance in InSb Doped with Mn

    PubMed Central

    Obukhov, S. A.; Tozer, S. W.; Coniglio, W. A.

    2015-01-01

    We report magnetotransport investigation of nonmagnetic InSb single crystal doped with manganese at Mn concentration NMn ~ 1,5 × 1017 cm−3 in the temperature range T = 300 K–40 mK, magnetic field B = 0–25T and hydrostatic pressure P = 0–17 kbar. Resistivity saturation was observed in the absence of magnetic field at temperatures below 200 mK while applied increasing external magnetic field induced colossal drop of resistivity (by factor 104) at B ~ 4T with further gigantic resistivity increase (by factor 104) at 15T. Under pressure, P = 17 kbar, resistivity saturation temperature increased up to 1,2 K. Existing models are discussed in attempt to explain resistivity saturation, dramatic influence of magnetic field and pressure on resistivity with the focus on possible manifestation of three dimensional Wigner crystal formed in InSb by light electrons and heavy holes. PMID:26307952

  4. Magnetic and transport properties of colossal magnetoresistance compound EuB{sub 6}

    SciTech Connect

    Glushkov, V. V. Bogach, A. V.; Gon'kov, K. V.; Demishev, S. V.; Ivanov, V. Yu.; Kuznetsov, A. V.; Samarin, N. A.; Shitsevalova, N. Yu.; Flachbart, K.; Sluchanko, N. E.

    2007-07-15

    The galvanomagnetic and magnetic properties of EuB{sub 6} single crystal have been measured over wide temperature (1.8-300 K) and magnetic-field (up to 70 kOe) ranges, and the parameters of charge carriers and the characteristics of the magnetic subsystem are estimated in the paramagnetic and ferromagnetic (T < T{sub C} {approx} 13.9 K) phases of this compound with strong electron correlations. In the temperature range T < T* {approx} 80 K, a magnetoresistance hysteresis {delta}{rho}(H)/{rho}(0) is detected; it reaches a maximum amplitude of about 5% at T {approx} 12 K. The anomalies of charge transport observed in the temperature range T{sub C} < T < T* are shown to be related to the magnetic scattering of charge carriers (m{sub eff} = (15-30)m{sub 0}, where m{sub 0} is the free-electron mass) that results from a short-range magnetic order appearing upon the formation of ferromagnetic nanoregions (ferrons)

  5. Magnetoresistive properties of cerium doped La0.7Ca0.3MnO3 manganites

    NASA Astrophysics Data System (ADS)

    Chihoub, R.; Amira, A.; Mahamdioua, N.; Altintas, S. P.; Varilci, A.; Terzioglu, C.

    2016-07-01

    In this work, the effect of doping by tetravalent Ce4+on the structural and magnetoresistive properties of La0.7-xCexCa0.3MnO3 polycrystalline manganites is presented. Samples with x=0, 0.1, 0.2 and 0.3 are prepared by solid state reaction method and characterized. For all doping levels, the X ray diffraction (XRD) analysis shows that the doping element is not completely soluble in the manganite. The cell parameters values, which decrease with Ce content, are refined in the orthorhombic system by taking into account the unreacted CeO2 phase. The observation by scanning electron microscopy (SEM) reveals a change in the morphology of the grains and the porosity of the samples by doping. The temperature dependence of magnetization curves shows a transition from paramagnetic to ferromagnetic state in all samples. A decrease of the Curie temperature Tc with doping is revealed. The resistivity of the samples increases with Ce content and shows a clear metal to insulator transition when measured as a function of temperature. The doping also decreases the temperature Tp of this transition, in accordance with the evolution of Tc values. The calculated magnetoresistance (MR) for a magnetic field of 5T increases gradually from 39.52% for x=0 to 66.18% for x=0.3.

  6. Magnetic anisotropy and anisotropic magnetoresistance in strongly phase separated manganite thin films

    NASA Astrophysics Data System (ADS)

    Kandpal, Lalit M.; Singh, Sandeep; Kumar, Pawan; Siwach, P. K.; Gupta, Anurag; Awana, V. P. S.; Singh, H. K.

    2016-06-01

    The present study reports the impact of magnetic anisotropy (MA) on magnetotransport properties such as the magnetic transitions, magnetic liquid behavior, glass transition and anisotropic magnetoresistance (AMR) in epitaxial film (thickness 42 nm) of strongly phase separated manganite La5/8-yPryCa3/8MnO3 (y≈0.4). Angle dependent magnetization measurement confirms the out-of-plane magnetic anisotropy with the magnetic easy axes aligned in the plane of the film and the magnetic hard axis along the normal to the film plane. The more prominent divergence between the zero filed cooled (ZFC) and field cooled warming (FCW) and the stronger hysteresis between the field cooled cooling (FCC) and FCW magnetization for H ∥ shows the weakening of the magnetic liquid along the magnetic hard axis. The peak at Tp≈42 K in FCW magnetization, which characterizes the onset of spin freezing shifts down to Tp≈18 K as the field direction is switched from the easy axes (H ∥) to the hard axis (H ⊥). The glass transition, which appears at Tg≈28 K for H ∥ disappears for H ⊥. The easy axis magnetization (M∣∣) appears to saturate around H~20 kOe, but the hard axis counterpart (M⊥) does not show such tendency even up to H=50 kOe. MA appears well above the ferromagnetic (FM) transition at T≈170 K, which is nearly the same as the Neel temperature (TN) of M⊥ - T . The temperature dependent resistivity measured at H=10 kOe applied along the easy axis (ρ|| - T) and the hard axis (ρ⊥ - T) shows insulator metal transition (IMT) at ≈106 K and ≈99 K in the cooling cycle, respectively. The large difference between ρ⊥ - T and ρ|| - T during the cooling cycle and in the vicinity of IMT results in huge AMR of ≈-142% and -115%. The observed properties have been explained in terms of the MA induced variation in the relative fraction of the coexisting magnetic phases.

  7. Effects of Lattice Distortion and Jahn-Teller Coupling on the Magnetoresistance of La(sub 0.7)Ca(sub 0.3)MnO(sub 3) and La(sub 0.5)Ca(sub 0.5)CoO(sub 3) Epitaxial Films

    NASA Technical Reports Server (NTRS)

    Yeh, N. C.; Vasquez, R. P.; Beam, D. A.; Fu, C. C.; Huynh, J.; Beach, G.

    1996-01-01

    Studies of La(sub 0.7)Ca(sub 0.3)MnO(sub 3) epitaxial films on substrates with a range of lattice constants reveal two dominant contributions to the occurence of colossal negative magnetoresistance (CMR) in these manganites:...We therefore suggest that lattice polaron conduction associated with Jahn-Teller coupling is essential for the occurence of CMR, and that lattice distortion further enhances the CMR effect in the manganites.

  8. Coherent orbital waves during an Ultrafast Photo-induced Isulator-metal Transition in a magnetoresistive manganite

    SciTech Connect

    ULTRAS-INFM-CNR Dipartimento di Fisica, Politecnico di Milano, Italy; Department of Physics - Cavalleri Group, Clarendon Laboratory, University of Oxford, U.K.; Correlated Electron Research Center, Tsukuba, Japan; Schoenlein, Robert William; Polli, D.; Rini, M.; Wall, S.; Schoenlein, R.W.; Tomioka, Y.; Tokura, Y.; Cerullo, G.; Cavalleri, A.

    2007-06-01

    Photo-excitation can drive strongly correlated electron insulators into competing conducting phases1,2, resulting in giant and ultrafast changes of their electronic and magnetic properties. The underlying non-equilibrium dynamics involve many degrees of freedom at once, whereby sufficiently short optical pulses can trigger the corresponding collective modes of the solid along temporally coherent pathways. The characteristic frequencies of these modes range between the few GHz of acoustic vibrations3 to the tens or even hundreds of THz for purely electronic excitations. Virtually all experiments so far have used 100 fs or longer pulses, detecting only comparatively slow lattice dynamics4,5. Here, we use sub-10-fs optical pulses to study the photo-induced insulator-metal transition in the magneto-resistive manganite Pr0.7Ca0.3MnO3. At room temperature, we find that the time-dependent pathway towards the metallic phase is accompanied by coherent 31 THz oscillations of the optical reflectivity, significantly faster than all lattice vibrations. These high-frequency oscillations are suggestive of coherent orbital waves6,7, crystal-field excitations triggered here by impulsive stimulated Raman scattering. Orbital waves are likely to be initially localized to the small polarons of this room-temperature manganite, coupling to other degrees of freedom at longer times, as photo-domains coalesce into a metallic phase.

  9. Magnetic and charge ordering in nanosized manganites

    SciTech Connect

    Zhang, T. Wang, X. P.; Fang, Q. F.; Li, X. G.

    2014-09-15

    Perovskite manganites exhibit a wide range of functional properties, such as colossal magneto-resistance, magnetocaloric effect, multiferroic property, and some interesting physical phenomena including spin, charge, and orbital ordering. Recent advances in science and technology associated with perovskite oxides have resulted in the feature sizes of microelectronic devices down-scaling into nanoscale dimensions. The nanoscale perovskite manganites display novel magnetic and electronic properties that are different from their bulk and film counterparts. Understanding the size effects of perovskite manganites at the nanoscale is of importance not only for the fundamental scientific research but also for developing next generation of electronic and magnetic nanodevices. In this paper, the current understanding and the fundamental issues related to the size effects on the magnetic properties and charge ordering in manganites are reviewed, which covers lattice structure, magnetic and electronic properties in both ferromagnetic and antiferromagnetic based manganites. In addition to review the literatures, this article identifies the promising avenues for the future research in this area.

  10. Magnetic and charge ordering in nanosized manganites

    NASA Astrophysics Data System (ADS)

    Zhang, T.; Wang, X. P.; Fang, Q. F.; Li, X. G.

    2014-09-01

    Perovskite manganites exhibit a wide range of functional properties, such as colossal magneto-resistance, magnetocaloric effect, multiferroic property, and some interesting physical phenomena including spin, charge, and orbital ordering. Recent advances in science and technology associated with perovskite oxides have resulted in the feature sizes of microelectronic devices down-scaling into nanoscale dimensions. The nanoscale perovskite manganites display novel magnetic and electronic properties that are different from their bulk and film counterparts. Understanding the size effects of perovskite manganites at the nanoscale is of importance not only for the fundamental scientific research but also for developing next generation of electronic and magnetic nanodevices. In this paper, the current understanding and the fundamental issues related to the size effects on the magnetic properties and charge ordering in manganites are reviewed, which covers lattice structure, magnetic and electronic properties in both ferromagnetic and antiferromagnetic based manganites. In addition to review the literatures, this article identifies the promising avenues for the future research in this area.

  11. A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

    NASA Technical Reports Server (NTRS)

    Liu, S. Q.; Wu, N. J.; Ignatiev, A.

    2001-01-01

    A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

  12. Colossal magnetoresistance in amino-functionalized graphene quantum dots at room temperature: manifestation of weak anti-localization and doorway to spintronics.

    PubMed

    Roy, Rajarshi; Thapa, Ranjit; Kumar, Gundam Sandeep; Mazumder, Nilesh; Sen, Dipayan; Sinthika, S; Das, Nirmalya S; Chattopadhyay, Kalyan K

    2016-04-21

    In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (∼1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for future graphene quantum dot based spintronic applications.

  13. A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

    NASA Technical Reports Server (NTRS)

    Liu, S. Q.; Wu, N. J.; Ignatiev, A.

    2001-01-01

    A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

  14. Colossal thermoelectric power in charge ordered lanthanum calcium manganites (La{sub 0.5}Ca{sub 0.5}MnO{sub 3})

    SciTech Connect

    Joy, Lija K.; Anantharaman, M. R.; Shanmukharao Samatham, S.; Ganesan, V.; Thomas, Senoy; Al-Harthi, Salim; Liebig, A.; Albrecht, M.

    2014-12-07

    Lanthanum calcium manganites (La{sub 0.5}Ca{sub 0.5}MnO{sub 3}) with a composition close to charge ordering, synthesized by high energy ball milling, was found to exhibit colossal thermoelectric power. Thermoelectric power (TEP) data was systematically analyzed by dividing the entire temperature range (5 K–300 K) into three different regimes to explore different scattering mechanisms involved. Mandal's model has been applied to explain TEP data in the region below the Curie temperature (T{sub C}). It has been found that the variation of thermoelectric power with temperature is pronounced when the system enters the charge ordered region at T < 200 K. For temperatures lower than 120 K, due to the co-existence of charge ordered state with a spin-glass state, the variation of thermoelectric power is maximum and exhibited a peak value of −80 mV/K at 58 K. This has been explained by incorporating Kondo properties of the spin-glass along with magnon scattering. FC-ZFC magnetization measurements indicate the existence of a glassy state in the region corresponding to a maximum value of thermoelectric power. Phonon drag contribution instead of spin-glass contribution is taken into account to explain TEP in the region 120 K < T < T{sub C}. Mott's polaronic contribution of charge carriers are considered to interpret TEP in the high temperature region (T > T{sub C}). The optimal Mn{sup 4+}-Mn{sup 3+} concentration in charge ordered La{sub 0.5}Ca{sub 0.5}MnO{sub 3} was examined by X-ray Photoelectron Spectroscopy analysis which confirms the charge ordered nature of this compound.

  15. Colossal thermoelectric power in charge ordered lanthanum calcium manganites (La0.5Ca0.5MnO3)

    NASA Astrophysics Data System (ADS)

    Joy, Lija K.; Shanmukharao Samatham, S.; Thomas, Senoy; Ganesan, V.; Al-Harthi, Salim; Liebig, A.; Albrecht, M.; Anantharaman, M. R.

    2014-12-01

    Lanthanum calcium manganites (La0.5Ca0.5MnO3) with a composition close to charge ordering, synthesized by high energy ball milling, was found to exhibit colossal thermoelectric power. Thermoelectric power (TEP) data was systematically analyzed by dividing the entire temperature range (5 K-300 K) into three different regimes to explore different scattering mechanisms involved. Mandal's model has been applied to explain TEP data in the region below the Curie temperature (TC). It has been found that the variation of thermoelectric power with temperature is pronounced when the system enters the charge ordered region at T < 200 K. For temperatures lower than 120 K, due to the co-existence of charge ordered state with a spin-glass state, the variation of thermoelectric power is maximum and exhibited a peak value of -80 mV/K at 58 K. This has been explained by incorporating Kondo properties of the spin-glass along with magnon scattering. FC-ZFC magnetization measurements indicate the existence of a glassy state in the region corresponding to a maximum value of thermoelectric power. Phonon drag contribution instead of spin-glass contribution is taken into account to explain TEP in the region 120 K < T < TC. Mott's polaronic contribution of charge carriers are considered to interpret TEP in the high temperature region (T > TC). The optimal Mn4+-Mn3+ concentration in charge ordered La0.5Ca0.5MnO3 was examined by X-ray Photoelectron Spectroscopy analysis which confirms the charge ordered nature of this compound.

  16. Theory of Strain-Controlled Magnetotransport and Stabilization of the Ferromagnetic Insulating Phase in Manganite Thin Films

    NASA Astrophysics Data System (ADS)

    Mukherjee, Anamitra; Cole, William S.; Woodward, Patrick; Randeria, Mohit; Trivedi, Nandini

    2013-04-01

    We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.

  17. Changes of the local distortions and colossal magnetoresistive properties of La(0.7)Ca(0.3)MnO(3) induced by Ti or Ga defects

    SciTech Connect

    Bridges, F.; Cao, D.; Anderson, M.; Ramirez, A.P.; Olapinski, M.; Subramanian, M.A.; Booth, C.H.; Kwei, G.

    2002-07-12

    The magnetoresistive properties of La0.7Ca0.3MnO3 change rapidly when Ti or Ga are substituted on the Mn site for concentrations, x, from 1 to 10 percent. The samples exhibit colossal magnetoresistance (CMR) and the resistivity increases dramatically with dopant concentration. The temperature of the resistivity peak, TR, shifts rapidly to lower temperatures with increasing x and the ferromagnetic transition broadens. However, the transition temperature, Tc, is only slightly suppressed. Consequently, TR occurs well below Tc for x above 2 percent. Investigations of these materials using Mn XAFS show that changes in the local structure, parametrized by the pair-distribution width, sigma, correlate well with Tc and the sample magnetization. For a given dopant, the resistivity peak occurs when sigma{sup 2} decreases below a critical value. Both dopants produce extended defects which increases the resistivity of the nearby materials considerably. The data suggest that even at x {approx}4 percent, most of the sites are slightly distorted at low T.

  18. Colossal magnetoresistance accompanying a structural transition in a highly two-dimensional metallic state of Ca3 Ru2 O7

    NASA Astrophysics Data System (ADS)

    Ohmichi, E.; Yoshida, Y.; Ikeda, S. I.; Shirakawa, N.; Osada, T.

    2004-09-01

    We report the high-field magnetoresistivity, magnetization, and magnetostriction data of a bilayered ruthenate Ca3Ru2O7 grown by a floating-zone method. The samples used in this study show metallic inplane conduction, but nonmetallic interplane conduction, below 30K ; these results are suggestive of a highly two-dimensional metallic ground state. We demonstrate here the existence of two types of field-induced metamagnetic transitions at 6 and 15T , accompanied by the colossal magnetoresistance effect in the interplane conduction [ρc(20T)/ρc(0T)<10-3] . Interestingly, the higher-field transition is accompanied by large inplane lattice shrinkage that is sufficient to cause orbital polarization in nearly threefold t2g orbitals. The lattice change due to the magnetic field coincides with the discontinuity at 48K observed in the thermal contraction data, suggesting that the high-temperature crystal structure is restored by the application of a magnetic field. In this paper, we will discuss this anomalous coupling between spin, charge, and lattice in Ca3Ru2O7 in terms of structural distortions.

  19. A Variable Temperature Synchrotron X-ray Diffraction Study of Colossal Magnetoresistant NdMnAsO0.95F0.05

    PubMed Central

    Wildman, E. J.; Mclaughlin, A. C.

    2016-01-01

    The recent discovery of high temperature superconductivity in Fe arsenides has invigorated research into transition metal pnictides. Colossal magnetoresistance (CMR) has recently been reported for NdMnAsO1-xFx for x = 0.05–0.08, with a maximum magnetoresistance achieved at low temperature (MR9T(3 K)) = −95%). This appears to be a novel mechanism of CMR, which is as a result of a second order phase transition in field from an insulating antiferromagnet to a semiconducting paramagnet. Here we report a variable temperature synchrotron X-ray powder diffraction study of the CMR oxypnictide NdMnAsO0.95F0.05 between 4 K–290 K. An excellent fit to the tetragonal unit cell with space group P4/nmm is obtained over the entire temperature range, with no change in crystal structure detected down to 4 K. A coupling of the lattice and magnetic order is observed, where subtle discontinuities in the temperature variation of a and the c/a ratio are apparent as the Nd spins order antiferromagnetically and the Mn moments reorient into the basal plane at TSR. The results suggest that very small changes in lattice parameters effect the coupling between lattice, electronic and magnetic degrees of freedom. PMID:26875693

  20. Isotropic Kink and Quasiparticle Excitations in the Three-Dimensional Perovskite Manganite La_{0.6}Sr_{0.4}MnO_{3}.

    PubMed

    Horiba, Koji; Kitamura, Miho; Yoshimatsu, Kohei; Minohara, Makoto; Sakai, Enju; Kobayashi, Masaki; Fujimori, Atsushi; Kumigashira, Hiroshi

    2016-02-19

    In order to reveal the many-body interactions in three-dimensional perovskite manganites that show colossal magnetoresistance, we performed an in situ angle-resolved photoemission spectroscopy on La_{0.6}Sr_{0.4}MnO_{3} and investigated the behavior of quasiparticles. We observed quasiparticle peaks near the Fermi momentum in both the electron and the hole bands, and clear kinks throughout the entire hole Fermi surface in the band dispersion. This isotropic behavior of quasiparticles and kinks suggests that polaronic quasiparticles produced by the coupling of electrons with Jahn-Teller phonons play an important role in the colossal magnetoresistance properties of the ferromagnetic metallic phase of three-dimensional manganites.

  1. Anomalous Magnetoresistance in the Lanthanide Manganites and Its Relation to High-Tc Superconductivity.

    DTIC Science & Technology

    1996-05-01

    Figure No. 17 Conductivity 0 data as a function of temperature , showing the influence on the activation energies from rare - earth (RE) ion exchange...and 10. The influence of magnetic exchange on the Cu2+(3+) conductivity in the presence of rare - earth ions occupying the A sublattice is shown...electrical resisivity p data of the lanthanide ( rare - earth —RE) manganites (RE3+,_XA 2*X) Mn03 as functions of temperature and external magnetic field

  2. Magnetic and magnetoresistive properties of half-metallic ferromagnetic and charge ordered modified ferromagnetic manganite nanoparticles

    NASA Astrophysics Data System (ADS)

    Das, Kalipada; Das, I.

    2017-03-01

    In our present study, we address in detail magnetic and magneto-transport properties of well known half metallic La0.67Sr0.33MnO3 (LSMO) and charge order suppressed ferromagnetic La0.48Ca0.52MnO3 (LCMO) nanoparticles. The average particle size for LSMO and LCMO is ˜20 nm and ˜25 nm, respectively. With respect to their magnetic properties, both compounds exhibit ferromagnetic behavior, whereas they markedly differ in their magneto-transport characteristics. The magnetoresistive properties of LSMO nanoparticles indicate low field magnetoresistance and tendency for saturation at higher field values. In addition to the sharp low field magnetoresistance, we have achieved significantly large magnetoresistance at higher values of external magnetic field for the ferromagnetic LCMO nanoparticles. To address such anomalous behavior in these two different classes of ferromagnetic materials, we introduce the re-entrant core-shell type structure formation in charge ordered nanoparticles (LCMO) when charge ordering is completely suppressed.

  3. Strongly bias-dependent tunnel magnetoresistance in manganite spin filter tunnel junctions.

    PubMed

    Prasad, Bhagwati; Zhang, Wenrui; Jian, Jie; Wang, Haiyan; Blamire, Mark G

    2015-05-20

    A highly unconventional bias-dependent tunnel magnetoresistance (TMR) response is observed in Sm0.75 Sr0.25 MnO3 -based nanopillar spin filter tunnel junctions (SFTJs) with two different behaviors in two different thickness regimes of the barrier layer. Thinner barrier devices exhibit conventional SFTJ behaviors; however, for larger barrier thicknesses, the TMR-bias dependence is more complex and reverses sign at higher bias.

  4. 55Mn NMR observation of colossal magnetoresistance effect in Sm0.55Sr0.45MnO3

    NASA Astrophysics Data System (ADS)

    Michalik, J. M.; Rybicki, D.; Tarnawski, Z.; Sikora, M.; De Teresa, J. M.; Ibarra, M. R.; Kapusta, Cz

    2017-07-01

    Temperature dependent 55Mn NMR study of Sm0.55Sr0.45MnO3 is reported. Previous bulk magnetization measurements have shown that below T C ~ 125 K the sample is ferromagnetic metallic (FMM) and above TC it is charge ordered and insulating. In present report, we show that from zero-field NMR a single line double-exchange (DE) signal is observed at temperatures up to 139 K, which is due to a presence of FMM clusters also above T C. The intensity of the DE line follows the temperature dependence of the magnetization measured at 0.01 T. When a magnetic field up to 2 T is applied at 139 K (i.e. 14 K above T C), a strong increase in NMR intensity of the DE line is observed indicating that content of FMM regions increases. This reveals that metallicity is induced in the material by the applied magnetic field and explains the observed colossal magnetoresistance (CMR) effect at the microscopic level. The observation agrees with previous results, which confirm that the percolation of the FMM clusters is responsible for the CMR effect. The shift of the resonant frequency in the applied field is three times smaller compared to decrease expected from gyromagnetic ratio, which indicates an antiferromagnetic coupling between the FMM clusters.

  5. Method of making active magnetic refrigerant, colossal magnetostriction and giant magnetoresistive materials based on Gd-Si-Ge alloys

    DOEpatents

    Gschneidner, Jr., Karl A.; Pecharsky, Alexandra O.; Pecharsky, Vitalij K.

    2003-07-08

    Method of making an active magnetic refrigerant represented by Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4 alloy for 0.ltoreq.x.ltoreq.1.0 comprising placing amounts of the commercially pure Gd, Si, and Ge charge components in a crucible, heating the charge contents under subambient pressure to a melting temperature of the alloy for a time sufficient to homogenize the alloy and oxidize carbon with oxygen present in the Gd charge component to reduce carbon, rapidly solidifying the alloy in the crucible, and heat treating the solidified alloy at a temperature below the melting temperature for a time effective to homogenize a microstructure of the solidified material, and then cooling sufficiently fast to prevent the eutectoid decomposition and improve magnetocaloric and/or the magnetostrictive and/or the magnetoresistive properties thereof.

  6. Colossal magnetoresistance in amino-functionalized graphene quantum dots at room temperature: manifestation of weak anti-localization and doorway to spintronics

    NASA Astrophysics Data System (ADS)

    Roy, Rajarshi; Thapa, Ranjit; Kumar, Gundam Sandeep; Mazumder, Nilesh; Sen, Dipayan; Sinthika, S.; Das, Nirmalya S.; Chattopadhyay, Kalyan K.

    2016-04-01

    In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (~1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for future graphene quantum dot based spintronic applications.In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (~1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for

  7. Any ``p'' + ``se'' Between Grabar-Kitarovic & perovskite manganite-25

    NASA Astrophysics Data System (ADS)

    Maksoed, Wh-

    2016-10-01

    Of who meets at ``a transition -metal ion in an octahedral oxygen cage forming perovskite structure''-Dagotto & Tokura, 2008 provides the Colossal Magnetoresistance Effect observed in Monte Carlo simulations and ferromagnetic & charge-ordered states in models for Manganites, realms A. Fert & P. Grundberg Nobel Prize in physics 2007 GMR/GiantMagnetoresistance winning accompanies current President of Croatia: Grabar-Kitarovic. Furthers, a family of magnetic nanocomposites, the so called molecular cluster, there retrieves `magnetic molecular clusters like Mn12 & Fe8 bridge the atomic & mesoscopic scales' describes by ought to be related to at least single-molecular magnets/Molecular Nanomagnets. Heartfelt gratitudes to HE. Mr. Ir. Sarwono Kusumaatmadja/PT. Smartfren INDONESIA.

  8. Spin-dependent Seebeck Effect, Thermal Colossal Magnetoresistance and Negative Differential Thermoelectric Resistance in Zigzag Silicene Nanoribbon Heterojunciton

    PubMed Central

    Fu, Hua-Hua; Wu, Dan-Dan; Zhang, Zu-Quan; Gu, Lei

    2015-01-01

    Spin-dependent Seebeck effect (SDSE) is one of hot topics in spin caloritronics, which examine the relationships between spin and heat transport in materials. Meanwhile, it is still a huge challenge to obtain thermally induced spin current nearly without thermal electron current. Here, we construct a hydrogen-terminated zigzag silicene nanoribbon heterojunction, and find that by applying a temperature difference between the source and the drain, spin-up and spin-down currents are generated and flow in opposite directions with nearly equal magnitudes, indicating that the thermal spin current dominates the carrier transport while the thermal electron current is much suppressed. By modulating the temperature, a pure thermal spin current can be achieved. Moreover, a thermoelectric rectifier and a negative differential thermoelectric resistance can be obtained in the thermal electron current. Through the analysis of the spin-dependent transport characteristics, a phase diagram containing various spin caloritronic phenomena is provided. In addition, a thermal magnetoresistance, which can reach infinity, is also obtained. Our results put forward an effective route to obtain a spin caloritronic material which can be applied in future low-power-consumption technology. PMID:26000658

  9. Spin-dependent Seebeck Effect, Thermal Colossal Magnetoresistance and Negative Differential Thermoelectric Resistance in Zigzag Silicene Nanoribbon Heterojunciton

    NASA Astrophysics Data System (ADS)

    Fu, Hua-Hua; Wu, Dan-Dan; Zhang, Zu-Quan; Gu, Lei

    2015-05-01

    Spin-dependent Seebeck effect (SDSE) is one of hot topics in spin caloritronics, which examine the relationships between spin and heat transport in materials. Meanwhile, it is still a huge challenge to obtain thermally induced spin current nearly without thermal electron current. Here, we construct a hydrogen-terminated zigzag silicene nanoribbon heterojunction, and find that by applying a temperature difference between the source and the drain, spin-up and spin-down currents are generated and flow in opposite directions with nearly equal magnitudes, indicating that the thermal spin current dominates the carrier transport while the thermal electron current is much suppressed. By modulating the temperature, a pure thermal spin current can be achieved. Moreover, a thermoelectric rectifier and a negative differential thermoelectric resistance can be obtained in the thermal electron current. Through the analysis of the spin-dependent transport characteristics, a phase diagram containing various spin caloritronic phenomena is provided. In addition, a thermal magnetoresistance, which can reach infinity, is also obtained. Our results put forward an effective route to obtain a spin caloritronic material which can be applied in future low-power-consumption technology.

  10. Spin-dependent Seebeck Effect, Thermal Colossal Magnetoresistance and Negative Differential Thermoelectric Resistance in Zigzag Silicene Nanoribbon Heterojunciton.

    PubMed

    Fu, Hua-Hua; Wu, Dan-Dan; Zhang, Zu-Quan; Gu, Lei

    2015-05-22

    Spin-dependent Seebeck effect (SDSE) is one of hot topics in spin caloritronics, which examine the relationships between spin and heat transport in materials. Meanwhile, it is still a huge challenge to obtain thermally induced spin current nearly without thermal electron current. Here, we construct a hydrogen-terminated zigzag silicene nanoribbon heterojunction, and find that by applying a temperature difference between the source and the drain, spin-up and spin-down currents are generated and flow in opposite directions with nearly equal magnitudes, indicating that the thermal spin current dominates the carrier transport while the thermal electron current is much suppressed. By modulating the temperature, a pure thermal spin current can be achieved. Moreover, a thermoelectric rectifier and a negative differential thermoelectric resistance can be obtained in the thermal electron current. Through the analysis of the spin-dependent transport characteristics, a phase diagram containing various spin caloritronic phenomena is provided. In addition, a thermal magnetoresistance, which can reach infinity, is also obtained. Our results put forward an effective route to obtain a spin caloritronic material which can be applied in future low-power-consumption technology.

  11. Atomic-scale electrochemistry on the surface of a manganite

    DOE PAGES

    Vasudevan, Rama K.; Tselev, Alexander; Baddorf, Arthur P.; ...

    2015-04-09

    The doped manganese oxides (manganites) have been widely studied for their colossal magnetoresistive effects, for potential applications in oxide spintronics, electroforming in resistive switching devices, and are materials of choice as cathodes in modern solid oxide fuel cells. However, little experimental knowledge of the dynamics of the surfaces of perovskite manganites at the atomic scale exists. Here, through in-situ scanning tunnelling microscopy (STM), we demonstrate atomic resolution on samples of La0.625Ca0.375MnO3 grown on (001) SrTiO3 by pulsed laser deposition (PLD). Furthermore, by applying triangular DC waveforms of increasing amplitude to the STM tip, and measuring the tunnelling current, we demonstratemore » the ability to both perform and monitor surface electrochemical processes at the atomic level, including, for the first time in a manganite, formation of single and multiple oxygen vacancies, disruption of the overlying manganite layers, and removal and deposition of individual atomic units or clusters. Our work paves the way for better understanding of surface oxygen reactions in these systems.« less

  12. Atomic-scale electrochemistry on the surface of a manganite

    SciTech Connect

    Vasudevan, Rama K.; Tselev, Alexander; Baddorf, Arthur P.; Kalinin, Sergei V.

    2015-04-09

    The doped manganese oxides (manganites) have been widely studied for their colossal magnetoresistive effects, for potential applications in oxide spintronics, electroforming in resistive switching devices, and are materials of choice as cathodes in modern solid oxide fuel cells. However, little experimental knowledge of the dynamics of the surfaces of perovskite manganites at the atomic scale exists. Here, through in-situ scanning tunnelling microscopy (STM), we demonstrate atomic resolution on samples of La0.625Ca0.375MnO3 grown on (001) SrTiO3 by pulsed laser deposition (PLD). Furthermore, by applying triangular DC waveforms of increasing amplitude to the STM tip, and measuring the tunnelling current, we demonstrate the ability to both perform and monitor surface electrochemical processes at the atomic level, including, for the first time in a manganite, formation of single and multiple oxygen vacancies, disruption of the overlying manganite layers, and removal and deposition of individual atomic units or clusters. Our work paves the way for better understanding of surface oxygen reactions in these systems.

  13. Spin correlations in the bilayer manganite La 1.2Sr 1.8Mn 2O 7

    NASA Astrophysics Data System (ADS)

    Chatterji, T.; McIntyre, G. J.; Suryanarayanan, R.; Dhalenne, G.; Revcolevschi, A.

    1999-09-01

    We have investigated the spin correlations of the bilayer manganite La 1.2Sr 1.8Mn 2O 7, which shows colossal magnetoresistance (CMR) behaviour. Rod-like diffuse scattering parallel to c→∗ in the ( hol) plane has been observed. We have determined the temperature variation of the in-plane correlation length from the ( h,0,1.833) scan, which is perpendicular to the rod. The modulation of the diffuse-scattering intensity parallel to the rod in the scan (0.95,0, l) above Tc shows that the two ferromagnetic Mn planes in the bilayer are ferromagnetically correlated.

  14. Time-resolved Studies of Phase Transition Dynamics in Strongly Correlated Manganites

    SciTech Connect

    Rini, M; Tobey, R; Dean, N; Wall, S; Ehrke, H; Zhu, Y; Tomioka, Y; Tokura, Y; Schoenlein, R W; Cavalleri, A

    2008-12-05

    Ultrafast light pulses can be used to control electronic, magnetic and structural phases of complex solids. Here, we investigate the dynamics of insulator-metal phase transitions in colossal magnetoresistive (CMR) manganites by a combination of femtosecond visible-to-midinfrared pump-probe techniques and transport measurements. We show that an insulator-metal transition can be stimulated in CMR manganites by both above bandgap excitation and selective excitation of individual vibrational degrees of freedom. These two approaches rely on the ultrafast manipulation of parameters controlling the electronic filling and the electronic bandwidth respectively, extending the concepts of filling and bandwidth control to the ultrafast timescale. The ultrafast vibrational control of correlated-electron phases may provide new insights into the role played by lattice vibrations in determining the electronic properties of complex solids.

  15. First Order CMR Transitions in the Two-Orbital Model for Manganites

    SciTech Connect

    Sen, Cengiz; Alvarez, Gonzalo; Dagotto, Elbio R

    2010-01-01

    Large-scale Monte Carlo simulation results for the two-orbital model for manganites, including Jahn-Teller lattice distortions, are presented here. At hole density x=1/4 and in the vicinity of the region of competition between the ferromagnetic metallic and spin-charge-orbital ordered insulating phases, the colossal magnetoresistance (CMR) phenomenon is observed with a magnetoresistance ratio {approx}10,000%. Our main result is that this CMR transition is found to be of first order in some portions of the phase diagram, in agreement with early results from neutron scattering, specific heat, and magnetization, thus solving a notorious discrepancy between experiments and previous theoretical studies. The first order characteristics of the transition survive, and are actually enhanced, when weak quenched disorder is introduced.

  16. Nanoscale control of low-dimensional spin structures in manganites

    NASA Astrophysics Data System (ADS)

    Jing, Wang; Iftikhar, Ahmed Malik; Renrong, Liang; Wen, Huang; Renkui, Zheng; Jinxing, Zhang

    2016-06-01

    Due to the upcoming demands of next-generation electronic/magnetoelectronic devices with low-energy consumption, emerging correlated materials (such as superconductors, topological insulators and manganites) are one of the highly promising candidates for the applications. For the past decades, manganites have attracted great interest due to the colossal magnetoresistance effect, charge-spin-orbital ordering, and electronic phase separation. However, the incapable of deterministic control of those emerging low-dimensional spin structures at ambient condition restrict their possible applications. Therefore, the understanding and control of the dynamic behaviors of spin order parameters at nanoscale in manganites under external stimuli with low energy consumption, especially at room temperature is highly desired. In this review, we collected recent major progresses of nanoscale control of spin structures in manganites at low dimension, especially focusing on the control of their phase boundaries, domain walls as well as the topological spin structures (e.g., skyrmions). In addition, capacitor-based prototype spintronic devices are proposed by taking advantage of the above control methods in manganites. This capacitor-based structure may provide a new platform for the design of future spintronic devices with low-energy consumption. Project supported by the National Basic Research Program of China (Grant No. 2014CB920902), the National Natural Science Foundation of China (Grant Nos. 61306105 and 51572278), the Information Science and Technology (TNList) Cross-discipline Foundation from Tsinghua National Laboratory, China and the Fund from the State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

  17. A new method of increasing thermopower in doped manganites

    NASA Astrophysics Data System (ADS)

    Koroleva, L. I.; Morozov, A. S.; Zhakina, E. S.; Batashev, I. K.; Balbashov, A. M.

    2016-06-01

    Thermopower, magnetothermopower, resistivity, magnetoresistance, and magnetization of singlecrystalline samples of the Sm1- x Sr x MnO3 system ( x = 0.15, 0.2, 0.25, 0.3) have been experimentally studied. These compositions consist of ferromagnetic clusters of the ferron type dispersed in the A-type antiferromagnetic matrix. Colossal thermo- and negative magnetothermopower values reaching 94.5% in a composition with x = 0.3 in the region of Curie point T C in a magnetic field of 1.323 T. This result implies that thermopower is mostly related to ferron-type clusters, since their breakage under the action of magnetic field or heating above T C leads to a sharp decrease in thermopower values. These results imply that thermopower in doped manganite semiconductors is determined by the concentration of impurity and volume of a sample.

  18. What Coexists with the Ferromagnetic Metallic Phase in Manganites?

    SciTech Connect

    Burkhardt, Mark H; Hossain, M A; Sarkar, S; Achkar, A J; Hawthorn, D G; Sutarto, R; Chuang, 5 Y.-D.; Gonzalez, A G Cruz; Choi, Y J; Cheong, S -W; Durr, H A; Stohr, J

    2012-07-25

    Colossal magnetoresistance, whereby the application of a magnetic field reduces the resistivity of a manganite by orders of magnitude, is generally believed to occur because of coexisting phases. Development of a complete theory to explain the phenomenon requires that the exact nature of these phases be known. We used resonant elastic soft x-ray scattering to examine the superlattice order that exists in La{sub 0.35}Pr{sub 0.275}Ca{sub 0.375}MnO{sub 3} above and below the Curie temperature. By measuring the resonance profile of the scattered x-rays at different values of q, we disentangle the contributions of orbital order and antiferromagnetism to the scattering signal above the Curie temperature. Below the Curie temperature, we see no signal from orbital order, and only antiferromagnetism coexists with the dominant ferromagnetic metallic phase.

  19. Anisotropic imprint of amorphization and phase separation in manganite thin films via laser interference irradiation.

    PubMed

    Ding, Junfeng; Lin, Zhipeng; Wu, Jianchun; Dong, Zhili; Wu, Tom

    2015-02-04

    Materials with mesoscopic structural and electronic phase separation, either inherent from synthesis or created via external means, are known to exhibit functionalities absent in the homogeneous counterparts. One of the most notable examples is the colossal magnetoresistance discovered in mixed-valence manganites, where the coexistence of nano- to micrometer-sized phase-separated domains dictates the magnetotransport. However, it remains challenging to pattern and process such materials into predesigned structures and devices. In this work, a direct laser interference irradiation (LII) method is employed to produce periodic stripes in thin films of a prototypical phase-separated manganite Pr0.65 (Ca0.75 Sr0.25 )0.35 MnO3 (PCSMO). LII induces selective structural amorphization within the crystalline PCSMO matrix, forming arrays with dimensions commensurate with the laser wavelength. Furthermore, because the length scale of LII modification is compatible to that of phase separation in PCSMO, three orders of magnitude of increase in magnetoresistance and significant in-plane transport anisotropy are observed in treated PCSMO thin films. Our results show that LII is a rapid, cost-effective and contamination-free technique to tailor and improve the physical properties of manganite thin films, and it is promising to be generalized to other functional materials.

  20. Ferromagnetic domain behavior and phase transition in bilayer manganites investigated at the nanoscale

    SciTech Connect

    Phatak, C.; Petford-Long, A. K.; Zheng, H.; Mitchell, J. F.; Rosenkranz, S.; Norman, M. R.

    2015-12-14

    Understanding the underlying mechanism and phenomenology of colossal magnetoresistance in manganites has largely focused on atomic and nanoscale physics such as double exchange, phase separation, and charge order. Here in this article, we consider a more macroscopic view of manganite materials physics, reporting on the ferromagnetic domain behavior in a bilayer manganite sample with a nominal composition of La2-2xSr1+2xMn2O7 with x = 0:38, studied using in-situ Lorentz transmission electron microscopy. The role of magnetocrystalline anisotropy on the structure of domain walls was elucidated. On cooling, magnetic domain contrast was seen to appear first at the Curie temperature within the a - b plane. With further reduction in temperature, the change in area fraction of magnetic domains was used to estimate the critical exponent describing the ferromagntic phase transition. Lastly, the ferromagnetic phase transition was accompanied by a distinctive nanoscale granular contrast close to the Curie temperature, which we infer to be related to the presence of ferromagnetic nanoclusters in a paramagnetic matrix, which has not yet been reported in bilayer manganites.

  1. Ferromagnetic domain behavior and phase transition in bilayer manganites investigated at the nanoscale

    DOE PAGES

    Phatak, C.; Petford-Long, A. K.; Zheng, H.; ...

    2015-12-14

    Understanding the underlying mechanism and phenomenology of colossal magnetoresistance in manganites has largely focused on atomic and nanoscale physics such as double exchange, phase separation, and charge order. Here in this article, we consider a more macroscopic view of manganite materials physics, reporting on the ferromagnetic domain behavior in a bilayer manganite sample with a nominal composition of La2-2xSr1+2xMn2O7 with x = 0:38, studied using in-situ Lorentz transmission electron microscopy. The role of magnetocrystalline anisotropy on the structure of domain walls was elucidated. On cooling, magnetic domain contrast was seen to appear first at the Curie temperature within the amore » - b plane. With further reduction in temperature, the change in area fraction of magnetic domains was used to estimate the critical exponent describing the ferromagntic phase transition. Lastly, the ferromagnetic phase transition was accompanied by a distinctive nanoscale granular contrast close to the Curie temperature, which we infer to be related to the presence of ferromagnetic nanoclusters in a paramagnetic matrix, which has not yet been reported in bilayer manganites.« less

  2. Epitaxial stabilization of ultra thin films of electron doped manganites

    SciTech Connect

    Middey, S. Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J.; Yazici, D.; Maple, M. B.; Ryan, P. J.; Freeland, J. W.

    2014-05-19

    Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

  3. Bilayer manganites: polarons in the midst of a metallic breakdown

    NASA Astrophysics Data System (ADS)

    Golden, Mark; Massee, Freek; de Jong, Sanne; Huang, Yingkai; Boothroyd, Andrew; Prabhakaran, D.; Follath, Rolf; Varykhalov, Andrei; Patthey, Luc; Shi, Ming; Goedkoop, Jeroen

    2011-03-01

    The exact nature of the low temperature electronic phase of the manganite materials family, and hence the origin of their colossal magnetoresistive (CMR) transition is still a flagship issue in emergent correlated matter research. By combining new photoemission and tunneling data, we show that in the bilayer (N = 2) manganite La 2-2x Sr 1+2x Mn 2 O7 the lattice/spin/orbital polaronic degrees of freedom win out, all across the CMR region of the phase diagram. This means that the generic ground state is that of a system in which strong interactions result in vanishing coherent quasi--particle spectral weight at the Fermi level for all locations in k --space. The incoherence of the charge carriers offers a unifying explanation for the anomalous charge-carrier dynamics seen in transport, optics and electron spectroscopic data. The stacking number N is the key factor for true metallic behavior, as an intergrowth-driven breakdown of the polaronic domination to give a robust metal possessing a traditional Fermi surface is seen in the bilayer system.

  4. Magnetic-polaron-induced colossal magnetocapacitance in CdCr2S4

    NASA Astrophysics Data System (ADS)

    Xie, Y. M.; Yang, Z. R.; Zhang, Z. T.; Yin, L. H.; Chen, X. L.; Song, W. H.; Sun, Y. P.; Zhou, S. Q.; Tong, W.; Zhang, Y. H.

    2013-10-01

    The origin of colossal magnetoresistance and colossal magnetocapacitance in a CdCr2S4 system was investigated. Thermoelectric-power and electronic spin resonance spectra reveal that the magnetic polaron is responsible for the colossal magnetoresistance in the n-type sample. The existence of magnetic polarons in the paramagnetic insulting matrix forms an intrinsic Maxwell-Wagner system, leading to the appearance of colossal magnetocapacitance. Being consistent with the evolution of magnetic polarons upon cooling, the Maxwell-Wagner system is valid around insulator-metal transition, where the resistance derived from impedance spectroscopy matches perfectly with DC resistance.

  5. Interplay between electronic transport and magnetic order in ferromagnetic magnetic manganite thin films

    SciTech Connect

    Hundley, M.F.; Neumeier, J.J.; Heffner, R.H.; Jia, Q.X.; Wu, X.D.; Thompson, J.D.

    1997-05-01

    The transition metal oxides La{sub 1{minus}x}A{sub x}MnO{sub 3} (A = Ba, Ca, or Sr) order ferromagnetically with Curie temperatures ranging from as low as 50 K to well above room temperature. Magnetic order in these compounds results in a concomitant metal-insulator transition. The feature displayed by the manganites that is most important technologically is the extremely large negative magnetoresistance that achieves its largest values near the magnetic ordering temperature. Qualitatively, this colossal magnetoresistance (CMR) phenomenon involves the suppression of the relatively sharp maximum in the resistivity that is centered at T{sub C}. When considered collectively, the anomalous temperature-dependent transport properties, the CMR effect, and the magnetically ordered ground state indicate that a novel interplay between magnetism and electronic transport occurs in the manganites. General features of the magnetic-field and temperature-dependent electrical resistivity and magnetization as displayed by PLD-grown thin films are examined. Particular emphasis is placed on what these measurements tell us about the conduction process both above and below the magnetic ordering temperature.

  6. Structural and magnetic states in layered manganites: An expanding view of the phase diagram

    SciTech Connect

    Mitchell, J. F.; Millburn, J. E.; Ling, C.; Argyriou, D. N.; Bordallo, H. N.

    2000-01-05

    Colossal magnetoresistive (CMR) manganites display a spectacular range of structural, magnetic, and electronic phases as a function of hole concentration, temperature, magnetic field, etc. A1though the bulk of research has concentrated on the 3-D perovskite manganites, the ability to study anisotropic magnetic and electronic interactions made available in reduced dimensions has accelerated interest in the layered Ruddlesden-Popper (R-P) phases of the manganite class. The quest for understanding the coupling among lattice, spin, and electronic degrees of freedom (and dimensionality) is driven by the availability of high quality materials. In this talk, the authors will present recent results on synthesis and magnetic properties of layered manganites from the La{sub 2{minus}2x}Sr{sub 1+2x}Mn{sub 2}O{sub 7} series in the Mn{sup 4+}-rich regime x >0.5. This region of the composition diagram is populated by antiferromagnetic structures that evolve from the A-type layered order to G-type ''rocksalt'' order as x increases. Between these two regimes is a wide region (0.7 < x < 0.9) where an incommensurate magnetic structure is observed. The IC structure joins spin canting and phase separation as a mode for mixed-valent manganites to accommodate FM/AF competition. Transport in these materials is dominated by highly insulating behavior, although a region close to x = 0.5 exhibits metal-nonmetal transitions and an extreme sensitivity to oxygen content. They suggest two possible explanations for this transport behavior at doping just above x = O.5: localization by oxygen defects or charge ordering of Mn{sup 3+}/Mn{sup 4+}sites.

  7. Giant volume magnetostriction and colossal magnetoresistance at room temperature in La(0.7)Ba(0.3)MnO(3).

    PubMed

    Demin, R V; Koroleva, L I; Mukovskii, Ya M

    2005-01-12

    Giant volume magnetostriction at room temperature is found for the first time in a La(0.7)Ba(0.3)MnO(3) single crystal, achieving 2.54 × 10(-4) in a magnetic field of 8.2 kOe. An even greater value of the volume magnetostriction, equal to 4 × 10(-4) in the same magnetic field, is observed at the Curie point T(C) = 310 K.Volume magnetostriction and magnetoresistance exhibit similar dependences on temperature and magnetic field in the T(C)-region, that is explained by the presence in this compound of a magnetic two-phase ferromagnetic-antiferromagnetic state due to strong s-d exchange.

  8. Role of intergrowths in the properties of the naturally layered manganites.

    SciTech Connect

    Bader, S.D.; Berger, A.; Jiang, J.S.; Miller, D.J.; Mitchell, J.F.; Osgood, R.M. III

    1998-10-27

    The structural and magnetic properties of the two-layered Ruddlesden-Popper phase SrO(La{sub 1{minus}x}Sr{sub x}MnO{sub 3}){sub 2} with x = 0.3 and x = 0.4 are investigated. These naturally layered manganites exhibit a colossal magnetoresistance, a magnetic anisotropy which is strongly composition-dependent, almost no remanence, and a non-vanishing magnetization in an extended temperature range above the Curie temperature (T{sub c}). The magnetization in this temperature range is not intrinsic to the crystal, but is attributed to intergrowths. These two-dimensional lattice imperfections consist of additional or missing SrO layers and have been observed in transmission electron micrographs. The magnetic properties of the intergrowths differ from the bulk crystal which results in unusual magnetic behavior.

  9. Manipulation of magnetic phase separation and orbital occupancy in manganites by strain engineering and electric field

    NASA Astrophysics Data System (ADS)

    Cui, Bin; Song, Cheng; Pan, Feng; Key Laboratory of Advanced Materials (MOE) Team

    2015-03-01

    The modification of electronic phases in correlated oxides is one of the core issues of condensed matter. We report the reversible control of ferromagnetic phase transition in manganite films by ionic liquid gating, replicating the La1-xSrxMnO3 (LSMO) phase diagram. The formation and annihilation of an insulating and magnetically hard phase in the soft magnetic matrix, which randomly nucleates and grows across the film, is directly observed under different gate voltages (VG) . The realization of reversible metal-insulator transition in colossal magnetoresistance materials can lead to the development of four-state memories. The orbital occupancy and magnetic anisotropy of LSMO films are manipulated by VG in a reversible and quantitative manner. Positive and negative VG increases and reduces the occupancy of the orbital and magnetic anisotropy that were initially favored by strain (irrespective of tensile and compressive), respectively. This finding fills in the blank of electrical manipulation of four degrees of freedom in correlated system.

  10. Non-Korringa nuclear relaxation in the ferromagnetic phase of the bilayered manganite La{sub1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7}.

    SciTech Connect

    Hoch, M. J. R.; Kuhns, P. L.; Moulton, W. G.; Lu, J.; Reyes, A. P.; Mitchell, J. F.; Materials Science Division; Florida State Univ.

    2009-01-01

    In contrast to ferromagnetic (FM) three-dimensional manganites, {sup 55}Mn NMR spectra obtained for the FM phase of the colossal magnetoresistance bilayer manganite La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} show a broad distribution of hyperfine fields at Mn sites. The hyperfine distribution reflects variations in the electronic structure at the local level. {sup 55}Mn spin-lattice relaxation rates have a surprisingly weak dependence both on temperature and on applied magnetic field. Significant departures of the relaxation rate from Korringa temperature dependence below 40 K provide evidence for non Fermi liquid behavior in this quasi-two-dimensional metal. At temperatures approaching T{sub c} from below, in the range where colossal magnetoresistance appears, further anomalous and field-dependent behavior is found in the relaxation rate temperature dependence. The results provide evidence for changes in the electronic structure with temperature in this poorly metallic system. At low temperatures the changes are possibly linked to orbital ordering effects. In addition, statistical fluctuations in dopant concentration may play some role in inducing local variations in the electronic structure. Above 90 K the emergence of polarons is likely to be responsible for the observed decrease in the relaxation rate.

  11. Atomic-scale electrochemistry on the surface of a manganite by scanning tunneling microscopy

    SciTech Connect

    Vasudevan, Rama K. Tselev, Alexander; Baddorf, Arthur P.; Gianfrancesco, Anthony G.

    2015-04-06

    The doped manganese oxides (manganites) have been widely studied for their colossal magnetoresistive effects, for potential applications in oxide spintronics, electroforming in resistive switching devices, and are materials of choice as cathodes in modern solid oxide fuel cells. However, little experimental knowledge of the dynamics of the surfaces of perovskite manganites at the atomic scale exists. Here, through in-situ scanning tunneling microscopy (STM), we demonstrate atomic resolution on samples of La{sub 0.625}Ca{sub 0.375}MnO{sub 3} grown on (001) SrTiO{sub 3} by pulsed laser deposition. Furthermore, by applying triangular DC waveforms of increasing amplitude to the STM tip, and measuring the tunneling current, we demonstrate the ability to both perform and monitor surface electrochemical processes at the atomic level, including formation of oxygen vacancies and removal and deposition of individual atomic units or clusters. Our work paves the way for better understanding of surface oxygen reactions in these systems.

  12. Phase separation of electrons strongly coupled with phonons in cuprates and manganites

    NASA Astrophysics Data System (ADS)

    Alexandrov, Sasha

    2009-03-01

    Recent advanced Monte Carlo simulations have not found superconductivity and phase separation in the Hubbard model with on-site repulsive electron-electron correlations. I argue that microscopic phase separations in cuprate superconductors and colossal magnetoresistance (CMR) manganites originate from a strong electron-phonon interaction (EPI) combined with unavoidable disorder. Attractive electron correlations, caused by an almost unretarded EPI, are sufficient to overcome the direct inter-site Coulomb repulsion in these charge-transfer Mott-Hubbard insulators, so that low energy physics is that of small polarons and small bipolarons. They form clusters localized by disorder below the mobility edge, but propagate as the Bloch states above the mobility edge. I identify the Froehlich EPI as the most essential for pairing and phase separation in superconducting layered cuprates. The pairing of oxygen holes into heavy bipolarons in the paramagnetic phase (current-carrier density collapse (CCDC)) explains also CMR and high and low-resistance phase coexistence near the ferromagnetic transition of doped manganites.

  13. Evaluation of the effect of various mechanisms on the magnetoresistance of lanthanum manganites La0.85Sr0.15MnO3 with activation-type conductivity

    NASA Astrophysics Data System (ADS)

    Gudin, S. A.; Kurkin, M. I.; Neifel'd, E. A.; Korolev, A. V.; Gapontseva, N. N.; Ugryumova, N. A.

    2015-11-01

    A method is proposed that allows one to divide the magnetoresistance (MR) observed in manganites into three mechanisms: dimensional, orientational, and magnetic. The first two mechanisms are associated with the stratification of a substance into ferromagnetic and nonferromagnetic phases, which significantly differ in electric resistivity. The dimensional mechanism of MR is attributed to the effect of a magnetic field on the size of magnetic inclusions. The orientational mechanism of MR is determined by the dependence of electric resistivity on the mutual orientation of the magnetizations of magnetic inclusions. The magnetic mechanism of MR is determined by the properties of the magnetization of a ferromagnet, in particular, by the Curie-Weiss singularity on the temperature dependence of magnetic susceptibility at the Curie point. This mechanism exists in homogeneous substances, although its value may depend on the magnetic properties of inhomogeneities. The method is developed for substances with activation-type conductivity and is applied to the analysis of MR of La0.85Sr0.15MnO3 manganite near the Curie point, where the MR attains its maximum. The dimensional mechanism turns out to be dominant in magnetic fields H greater than the saturation field H s ( H > H s ). The orientational, dimensional, and magnetic mechanisms have a comparable effect on the MR for H < H s . The effect of the orientational mechanism on MR is relatively weak (does not exceed the third part of the total MR), although this mechanism determines the giant MR in multilayered metal films. The possibility of application of the method to the analysis of MR near the insulator-metal transition is analyzed.

  14. Evaluation of the effect of various mechanisms on the magnetoresistance of lanthanum manganites La{sub 0.85}Sr{sub 0.15}MnO{sub 3} with activation-type conductivity

    SciTech Connect

    Gudin, S. A. Kurkin, M. I.; Neifel’d, E. A.; Korolev, A. V.; Gapontseva, N. N.; Ugryumova, N. A.

    2015-11-15

    A method is proposed that allows one to divide the magnetoresistance (MR) observed in manganites into three mechanisms: dimensional, orientational, and magnetic. The first two mechanisms are associated with the stratification of a substance into ferromagnetic and nonferromagnetic phases, which significantly differ in electric resistivity. The dimensional mechanism of MR is attributed to the effect of a magnetic field on the size of magnetic inclusions. The orientational mechanism of MR is determined by the dependence of electric resistivity on the mutual orientation of the magnetizations of magnetic inclusions. The magnetic mechanism of MR is determined by the properties of the magnetization of a ferromagnet, in particular, by the Curie–Weiss singularity on the temperature dependence of magnetic susceptibility at the Curie point. This mechanism exists in homogeneous substances, although its value may depend on the magnetic properties of inhomogeneities. The method is developed for substances with activation-type conductivity and is applied to the analysis of MR of La{sub 0.85}Sr{sub 0.15}MnO{sub 3} manganite near the Curie point, where the MR attains its maximum. The dimensional mechanism turns out to be dominant in magnetic fields H greater than the saturation field H{sub s} (H > H{sub s}). The orientational, dimensional, and magnetic mechanisms have a comparable effect on the MR for H < H{sub s}. The effect of the orientational mechanism on MR is relatively weak (does not exceed the third part of the total MR), although this mechanism determines the giant MR in multilayered metal films. The possibility of application of the method to the analysis of MR near the insulator–metal transition is analyzed.

  15. Interface engineering in manganites: from diodes to transistors

    NASA Astrophysics Data System (ADS)

    Hwang, Harold

    2012-02-01

    Perovskite manganites show strong coupling between charge, spin, and lattice degrees of freedom as exemplified by `colossal magnetoresistance'. The recent advances in thin film growth techniques have enabled the generation of novel phases at oxide heterointerfaces, the atomic control of their interface electronic structure, and their incorporation in novel device platforms. We apply these techniques to manganite thin films, first emphasizing the subtleties in optimizing the growth kinetics and stoichiometry [1,2], which has enabled us to create atomically precise heterostructures exhibiting room temperature metallic ferromagnetism in superlattices composed of just 5 unit cell layers [3]. The interface electronic structure was examined using Schottky junctions formed between La0.7Sr0.3MnO3 and Nb-doped SrTiO3, where the band offset (Schottky barrier height) can be controlled by the termination layer at the interface [4]. This band engineering technique was applied in making a metal-base transistor [5], which takes advantage of the strong internal electric field at interfaces. An analysis of many devices enables the quantitative understanding of the evolution from a hot-electron transistor to a permeable base transistor. This structure provides a platform for developing devices incorporating the exotic ground states of perovskite oxides and their interfaces. [4pt] [1] J. H. Song, T. Susaki, and H. Y. Hwang, Adv. Mater. 20, 2528 (2008). [0pt] [2] D. A. Muller, L. Fitting Kourkoutis, M. Murfitt, J. H. Song, H. Y. Hwang, J. Silcox, N. Delby, and O. L. Krivanek, Science 319, 1073 (2008). [0pt] [3] L. Fitting Kourkoutis, J. H. Song, H. Y. Hwang, and D. A. Muller, PNAS 107, 11682 (2010). [0pt] [4] Y. Hikita, M. Nishikawa, T. Yajima, and H. Y. Hwang, Phys. Rev. B 79, 073101 (2009). [0pt] [5] T. Yajima, Y. Hikita, and H. Y. Hwang, Nature Mater. 10, 198 (2011).

  16. Electroresistance and electronic phase separation in mixed-valent manganites.

    PubMed

    Wu, T; Ogale, S B; Garrison, J E; Nagaraj, B; Biswas, A; Chen, Z; Greene, R L; Ramesh, R; Venkatesan, T; Millis, A J

    2001-06-25

    The sensitivity of transport in colossal magnetoresistance (CMR) manganites to external electric and magnetic fields is examined using field effect configurations with La(0.7)Ca(0.3)MnO(3) (LCMO), Na(0.7)Sr(0.3)MnO(3), La(0.7)Ba(0.3)MnO(3), and La(0.5)Ca(0.5)MnO(3) (0.5-doped LCMO) channels, and ferroelectric PbZr(0.2)Ti(0.8)O(3) (PZT) or dielectric (SrTiO(3)) gates. A large electroresistance (ER) of approximately 76% at 4 x 10(5) V/cm is found in LCMO with PZT-ferroelectric gate, but the magnitude of the effect is much smaller (a few percent) in the other three channels. The ER and CMR effects are remarkably complimentary. The size and systematics of the effect strongly favor a percolative phase separation picture.

  17. Sintering temperature effect on electric transport properties and magnetoresistance of La{sub 0.67}Ca{sub 0.33}MnO{sub 3}

    SciTech Connect

    Ramadhan, M. R.; Kurniawan, B. Manaf, A.; Pratama, R.; Nanto, D.; Saptari, S. A.; Imaduddin, A.

    2016-04-19

    A compound of La{sub 0.67}Ca{sub 0.33}MnO{sub 3} (LCMO) is known as a famous colossal magnetoresistance material. Many studies have been carried in order to get more information about the electric and magnetic characteristic of the sample. The effect of two different sintering temperatures on manganite material La{sub 0.67}Ca{sub 0.33}MnO{sub 3} (LCMO) which prepared by solid state reaction, has been investigated in order to find the relations between the sintering temperature and the manganite’s electric transport properties. Characterization using X-Ray Diffractometer shows that the two samples have a single phase pattern. However, from the resistivity measurement both samples show a different value, but similar behavior. The resistivity reach maximum value in specific temperature T{sub p}, before it decreases once again to its lowest value in low temperature region.

  18. Pressure-induced colossal piezoresistance effect and the collapse of the polaronic state in the bilayer manganite (La(0.4)Pr(0.6))(1.2)Sr(1.8)Mn2O7.

    PubMed

    Thiyagarajan, R; Manivannan, N; Arumugam, S; Esakki Muthu, S; Tamilselvan, N R; Sekar, C; Yoshino, H; Murata, K; Apostu, M O; Suryanarayanan, R; Revcolevschi, A

    2012-04-04

    We have investigated the effect of hydrostatic pressure as a function of temperature on the resistivity of a single crystal of the bilayer manganite (La(0.4)Pr(0.6))(1.2)Sr(1.8)Mn(2)O(7). Whereas a strong insulating behaviour is observed at all temperatures at ambient pressure, a clear transition into a metallic-like behaviour is induced when the sample is subjected to a pressure (P) of ~1.0 GPa at T < 70 K. A huge negative piezoresistance ~10(6) in the low temperature region at moderate pressures is observed. When the pressure is increased further (5.5 GPa), the high temperature polaronic state disappears and a metallic behaviour is observed. The insulator to metal transition temperature exponentially increases with pressure and the distinct peak in the resistivity that is observed at 1.0 GPa almost vanishes for P > 7.0 GPa. A modification in the orbital occupation of the e(g) electron between 3d(x(2)-y(2)) and 3d(z(2)-r(2)) states, as proposed earlier, leading to a ferromagnetic double-exchange phenomenon, can qualitatively account for our data.

  19. Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

    SciTech Connect

    Alagoz, H. S. Jeon, J.; Keating, S.; Chow, K. H. Jung, J.

    2016-04-14

    We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution of electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.

  20. Scanning probe microscopy investigation of bilayered manganites

    NASA Astrophysics Data System (ADS)

    Huang, Junwei

    The bilayered manganite La2-2xSr 1+2xMn2O7, with x in the ferromagnetic compositional region, exhibits very interesting electronic and magnetic properties below the Curie temperature, such as a colossal magneto-resistance (CMR) effect. We have studied the microscopic electronic structure in the x = 0.32, 0.4 compounds at 80 K and 20 K by using a home-built low temperature scanning tunneling microscope (STM) and the evolution of the ferromagnetic domains with temperature and magnetic field in the x = 0.32 compound from 30 K to 110 K by using a home-built low temperature magnetic force microscope (MFM). STM topographic images show nano-sized patterns composed of Mn 3+-rich and Mn4+-rich regions in the mixed-valent matrix. Tunneling spectra I(V)& dIdV (V) show a gap and a tunneling asymmetry of the LDOS as a function of the sample bias voltage. By using current-imaging tunneling spectroscopy (CITS), we obtained a series of tunneling conductance maps which show the coexistence of localized electrons and itinerant electrons in this system. In the x = 0.32 compound, we observed a modulation with a wave vector of 16 A propagating along a-axis at 20K. This indicates the formation of a charge density wave as a result of Fermi surface nesting in this system. In MFM images, we observed that below 60 K, the ferromagnetic (FM) domains form stable treelike patterns and the domains are mainly oriented in the out-of-plane direction. As the temperature increases, the FM domains begin to experience a gradual change. This change becomes more and more rapid above 80 K. The FM domains change their magnetization from the out-of-plane direction to in-plane around 88 K. The in-plane FM domains completely disappear near T C. We also observed thermal hysteresis occurring in magnetic structures. We conclude that the formation of FM domains at low temperatures is determined by the energy associated with surface magnetic free poles and domain walls. At high temperatures, the two

  1. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    DOEpatents

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  2. The structure of nanoscale polaron correlations in the layered manganites

    NASA Astrophysics Data System (ADS)

    Campbell, Branton

    2002-03-01

    Recent x-ray and neutron scattering experiments have uncovered nanoscale polaron correlations that play an essential role in the colossal magnetoresistive (CMR) behavior of the perovskite manganites. Short-range polaronic order decreases the charge-carrier mobility of the high-temperature paramagnetic state, and subsequently becomes unstable at the ferromagnetic transition, contributing to a pronounced resistivity decrease at T_C. In the bilayered perovskite system La_2-2xSr_1+2xMn_2O7 (0.3 < x < 0.5), weak x-ray diffuse scattering maxima reveal a one-dimensional incommensurate structural modulation with wavevector q = (0.3, 0, ± 1) and a correlation length of 10 to 30 Angstroms. A crystallographic analysis of the diffuse satellite intensities yields a longitudinal Jahn-Teller stretch mode suggestive of charge-density-wave fluctuations. Within the correlated regions, polaronic eg electrons form a striped pattern of occupied d(3x^2-r^2) orbitals. Dynamic polaron correlations of the zig-zag orbital type are also observed above TC and exhibit distinctly glassy behavior. These structures provide unique insights into the nature of strongly correlated polaronic systems. Collaborators: R. Osborn, D.N. Argyriou, S. Rosenkranz, L. Vasiliu-Doloc, J.F. Mitchell, S.K. Sinha, J.W. Lynn, C.D. Ling, Z. Islam, U. Ruett, and A. Berger. This work was supported by the U.S. DOE Office of Science contract No. W-31-109-ENG-38.

  3. Control of the electronic phase of a manganite by mode-selective vibrational excitation

    NASA Astrophysics Data System (ADS)

    Rini, Matteo; Tobey, Ra'anan; Dean, Nicky; Itatani, Jiro; Tomioka, Yasuhide; Tokura, Yoshinori; Schoenlein, Robert W.; Cavalleri, Andrea

    2007-09-01

    Controlling a phase of matter by coherently manipulating specific vibrational modes has long been an attractive (yet elusive) goal for ultrafast science. Solids with strongly correlated electrons, in which even subtle crystallographic distortions can result in colossal changes of the electronic and magnetic properties, could be directed between competing phases by such selective vibrational excitation. In this way, the dynamics of the electronic ground state of the system become accessible, and new insight into the underlying physics might be gained. Here we report the ultrafast switching of the electronic phase of a magnetoresistive manganite via direct excitation of a phonon mode at 71meV (17THz). A prompt, five-order-of-magnitude drop in resistivity is observed, associated with a non-equilibrium transition from the stable insulating phase to a metastable metallic phase. In contrast with light-induced and current-driven phase transitions, the vibrationally driven bandgap collapse observed here is not related to hot-carrier injection and is uniquely attributed to a large-amplitude Mn-O distortion. This corresponds to a perturbation of the perovskite-structure tolerance factor, which in turn controls the electronic bandwidth via inter-site orbital overlap. Phase control by coherent manipulation of selected metal-oxygen phonons should find extensive application in other complex solids-notably in copper oxide superconductors, in which the role of Cu-O vibrations on the electronic properties is currently controversial.

  4. Composition dependence of charge and magnetic length scales in mixed valence manganite thin films.

    PubMed

    Singh, Surendra; Freeland, J W; Fitzsimmons, M R; Jeen, H; Biswas, A

    2016-07-27

    Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La1-yPry)1-xCaxMnO3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1-xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties.

  5. Composition dependence of charge and magnetic length scales in mixed valence manganite thin films

    NASA Astrophysics Data System (ADS)

    Singh, Surendra; Freeland, J. W.; Fitzsimmons, M. R.; Jeen, H.; Biswas, A.

    2016-07-01

    Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La1‑yPry)1‑xCaxMnO3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1‑xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties.

  6. Correlating quasiparticle excitations with quantum femtosecond magnetism in photoexcited nonequilibrium states of insulating antiferromagnetic manganites

    NASA Astrophysics Data System (ADS)

    Lingos, P. C.; Patz, A.; Li, T.; Barmparis, G. D.; Keliri, A.; Kapetanakis, M. D.; Li, L.; Yan, J.; Wang, J.; Perakis, I. E.

    2017-06-01

    We describe a mechanism for insulator-to-metal transition triggered by spin canting following femtosecond laser excitation of insulating antiferromagnetic (AFM) states of colossal magnetoresistive (CMR) manganites. We show that photoexcitation of composite fermion quasiparticles dressed by spin fluctuations results in the population of a broad metallic conduction band due to canting of the AFM background spins via strong electron-spin local correlation. By inducing spin canting, photoexcitation can increase the quasiparticle energy dispersion and quench the charge excitation energy gap. This increases the critical Jahn-Teller (JT) lattice displacement required to maintain an insulating state. We present femtosecond-resolved pump-probe measurements showing biexponential relaxation of the differential reflectivity below the AFM transition temperature. We observe a nonlinear dependence of the ratio of the femtosecond and picosecond relaxation component amplitudes at the same pump fluence threshold where we observe femtosecond magnetization photoexcitation. We attribute this correlation between nonlinear femtosecond spin and charge dynamics to spin/charge/lattice coupling and population inversion between the polaronic majority carriers and metallic quasielectron minority carriers as the lattice displacement becomes smaller than the critical value required to maintain an insulating state following laser-induced spin canting.

  7. Composition dependence of charge and magnetic length scales in mixed valence manganite thin films

    PubMed Central

    Singh, Surendra; Freeland, J. W.; Fitzsimmons, M. R.; Jeen, H.; Biswas, A.

    2016-01-01

    Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La1−yPry)1−xCaxMnO3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1−xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties. PMID:27461993

  8. Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films

    DOE PAGES

    Singh, Surendra; Freeland, J. W.; Fitzsimmons, Michael R.; ...

    2016-07-27

    Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La1-yPry)1-xCaxMnO3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1-xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance)more » measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties.« less

  9. Giant superconductivity-induced modulation of the ferromagnetic magnetization in a cuprate-manganite superlattice.

    PubMed

    Hoppler, J; Stahn, J; Niedermayer, Ch; Malik, V K; Bouyanfif, H; Drew, A J; Rössle, M; Buzdin, A; Cristiani, G; Habermeier, H-U; Keimer, B; Bernhard, C

    2009-04-01

    Artificial multilayers offer unique opportunities for combining materials with antagonistic orders such as superconductivity and ferromagnetism and thus to realize novel quantum states. In particular, oxide multilayers enable the utilization of the high superconducting transition temperature of the cuprates and the versatile magnetic properties of the colossal-magnetoresistance manganites. However, apart from exploratory work, the in-depth investigation of their unusual properties has only just begun. Here we present neutron reflectometry measurements of a [Y(0.6)Pr(0.4)Ba(2)Cu(3)O(7) (10 nm)/La(2/3)Ca(1/3)MnO(3) (10 nm)](10) superlattice, which reveal a surprisingly large superconductivity-induced modulation of the vertical ferromagnetic magnetization profile. Most surprisingly, this modulation seems to involve the density rather than the orientation of the magnetization and is highly susceptible to the strain, which is transmitted from the SrTiO(3) substrate. We outline a possible explanation of this unusual superconductivity-induced phenomenon in terms of a phase separation between ferromagnetic and non-ferromagnetic nanodomains in the La(2/3)Ca(1/3)MnO(3) layers.

  10. Transport studies of Nb-doped Pr0.7Sr0.3Mn1-xNbxO3 (0≤x≤0.05) manganites

    NASA Astrophysics Data System (ADS)

    Choithrani, Renu; Bhat, Masroor A.; Gaur, N. K.

    2014-09-01

    We have investigated the transport studies of the Nb-doped Pr0.7Sr0.3Mn1-xNbxO3 (0≤x≤0.05) manganites for the first time for identifying the transport properties as a function of the composition and temperature. Pr0.7Sr0.3Mn1-xNbxO3 (0≤x≤0.05) samples exhibit a single phase nature with an orthorhombic structure and a Pbnm space group. These materials show colossal magnetoresistance effect (CMR) and have wide technological applications such as magnetic sensors, reading head devices, spintronics, bolometers, magnetic refrigeration, etc. The computed transport properties such as cohesive energy, Reststrahlen frequency, Debye temperature, Grüneisen parameter and temperature dependence of specific heat of Pr0.7Sr0.3Mn1-xNbxO3 (0≤x≤0.05) manganites are discussed in detail in the present work by applying extended rigid ion model (ERIM) and have shown significant agreement with the corresponding available results.

  11. Surprising resistivity decrease in manganites with constant electronic density

    NASA Astrophysics Data System (ADS)

    Cortés-Gil, R.; Ruiz-González, M. L.; Alonso, J. M.; Martínez, J. L.; Hernando, A.; Vallet-Regí, M.; González-Calbet, J. M.

    2013-12-01

    A decrease of eight orders of magnitude in the resistance of (La0.5Ca0.5)zMnO3 has been detected when the electronic density is kept constant while the calcium content is modified by introducing cationic vacancies. This effect is related to the disappearance of the charge ordering state and the emergence of an antiferromagnetic-ferromagnetic transition. Moreover, high values of the colossal magnetoresistance above room temperature are attained. Dedicated to Professor J M Rojo.

  12. Unusual ferromagnetism enhancement in ferromagnetically optimal manganite La0.7−yCa0.3+yMn1−yRuyO3 (0≤y<0.3): the role of Mn-Ru t2g super-exchange

    PubMed Central

    Liu, M. F.; Du, Z. Z.; Xie, Y. L.; Li, X.; Yan, Z. B.; Liu, J. –M.

    2015-01-01

    The eg-orbital double-exchange mechanism as the core of physics of colossal magnetoresistance (CMR) manganites is well known, which usually covers up the role of super-exchange at the t2g-orbitals. The role of the double-exchange mechanism is maximized in La0.7Ca0.3MnO3, leading to the concurrent metal-insulator transition and ferromagnetic transition as well as CMR effect. In this work, by a set of synchronous Ru-substitution and Ca-substitution experiments on La0.7–yCa0.3+yMn1–yRuyO3, we demonstrate that the optimal ferromagnetism in La0.7Ca0.3MnO3 can be further enhanced. It is also found that the metal-insulator transition and magnetic transition can be separately modulated. By well-designed experimental schemes with which the Mn3+-Mn4+ double-exchange is damaged as weakly as possible, it is revealed that this ferromagnetism enhancement is attributed to the Mn-Ru t2g ferromagnetic super-exchange. The present work allows a platform on which the electro-transport and magnetism of rare-earth manganites can be controlled by means of the t2g-orbital physics of strongly correlated transition metal oxides. PMID:25909460

  13. Unusual ferromagnetism enhancement in ferromagnetically optimal manganite La0.7-yCa0.3+yMn1-yRuyO3 (0≤y<0.3): the role of Mn-Ru t2g super-exchange.

    PubMed

    Liu, M F; Du, Z Z; Xie, Y L; Li, X; Yan, Z B; Liu, J-M

    2015-04-24

    The eg-orbital double-exchange mechanism as the core of physics of colossal magnetoresistance (CMR) manganites is well known, which usually covers up the role of super-exchange at the t2g-orbitals. The role of the double-exchange mechanism is maximized in La0.7Ca0.3MnO3, leading to the concurrent metal-insulator transition and ferromagnetic transition as well as CMR effect. In this work, by a set of synchronous Ru-substitution and Ca-substitution experiments on La0.7-yCa0.3+yMn1-yRuyO3, we demonstrate that the optimal ferromagnetism in La0.7Ca0.3MnO3 can be further enhanced. It is also found that the metal-insulator transition and magnetic transition can be separately modulated. By well-designed experimental schemes with which the Mn(3+)-Mn(4+) double-exchange is damaged as weakly as possible, it is revealed that this ferromagnetism enhancement is attributed to the Mn-Ru t2g ferromagnetic super-exchange. The present work allows a platform on which the electro-transport and magnetism of rare-earth manganites can be controlled by means of the t2g-orbital physics of strongly correlated transition metal oxides.

  14. Composition dependence of electronic, magnetic, transport and morphological properties of mixed valence manganite thin films

    SciTech Connect

    Singh, Surendra; Freeland, J. W.; Fitzsimmons, Michael R.; Jeen, H.; Biswas, A.

    2016-07-27

    Mixed-valence manganese oxides present striking properties like the colossal magnetoresistance, metal-insulator transition (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases. Percolation of such phase coexistence in the vicinity of MIT leads to first-order transition in these manganites. However the length scales over which the electronic and magnetic phases are separated across MIT which appears compelling for bulk systems has been elusive in (La1-yPry)1-xCaxMnO3 films. Here we show the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1-xCaxMnO3 films with x = 0.33 and 0.375, across the MIT temperature. We combine electrical transport (resistance) measurements, x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and specular/off-specular x-ray resonant magnetic scattering (XRMS) measurements as a function of temperature to elucidate relationships between electronic, magnetic and morphological structure of the thin films. Using off-specular XRMS we obtained the charge-charge and charge-magnetic correlation length of these LPCMO films across the MIT. We observed different charge-magnetic correlation length for two films which increases below the MIT. The different correlation length shown by two films may be responsible for different macroscopic (transport and magnetic) properties.

  15. Origin of the Inverse spin-switch behavior in manganite/cuprate/manganite trilayers.

    SciTech Connect

    Nemes, N. M.; Garcia-Hernandez, M.; Visani, C.; Garcia-Barriocanal, J.; Pena, V.; Arias, D.; Sefrioui, Z.; Leon, C.; Santamaria, J.; te Velthuis, S. G. E.; Hoffmann, A.; Materials Science Division; Inst. de Ciencia de Materiales de Madrid; Univ. Complutense de Madrid

    2008-01-01

    We studied ferromagnet/superconductor/ferromagnet trilayers based on La{sub 0.7}Ca{sub 0.3}MnO{sub 3} manganite and YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) high-T{sub c} cuprate with magnetoresistance and magnetization measurements. We find an inverse superconducting spin-switch behavior, where superconductivity is favored for parallel alignment of the magnetization in the ferromagnetic layers. We argue that this inverse superconducting spin switch originates from the transmission of spin-polarized carriers into the superconductor. In this picture, the thickness dependence of the magnetoresistance yields the spin-diffusion length in YBCO as 13 nm. A comparison of bilayers and trilayers allows ruling out the effect of the stray fields of the domain structure of the ferromagnet as the source of the inverse superconducting spin switch.

  16. Mean-field and density-functional studies of charge ordering and magnetic transitions in lanthanum manganites

    NASA Astrophysics Data System (ADS)

    Mishra, Snigdharaj Kumar

    Manganese oxides with perovskite structure exhibit many interesting properties. Recently colossal magnetoresistance (CMR) was observed in these oxides. They show extremely large change in electrical resistance in response to applied magnetic fields. This property has lots of technological relevance for the development of magnetic memory and switching devices. These oxides also show transitions from antiferromagnet to ferromagnet coupled with charge-order to charge-nonorder transition. In this dissertation we examine the electronic origin of these phenomena of lanthanum manganites by studying a model electronic Hamiltonian, which includes double-exchange, super-exchange, and Hubbard terms, using a combination of Hartree-Fock approximation and an exact diagonalization scheme. The existence of "canted" spin order is investigated at zero temperature. We find that the double-exchange mechanism does not always lead to a canted magnetic state, even for small carrier concentration. The canting may be suppressed in these compounds for the typical electronic parameters. We study the charge ordering and magnetic transitions in the perovskites by solving the Hamiltonian both at zero and finite temperature. At zero temperature as we increase the strength of the extended-Hubbard repulsion (Usb1), a first-order transition from a charge-non-ordered metallic ferromagnet (FN) to a charge-ordered, insulating antiferromagnet (AFO) is obtained. The AFO-FN transition is also obtained by increasing the temperature T. The melting of charge ordering as a function of temperature, doping concentration and magnetic field is also examined. Different phases are obtained as a function of temperature and doping concentration. These are in qualitative agreement with experimental data. We study the electronic structures of pyrochlores by the density-functional LMTO method and show that the double-exchange mechanism is relevant for these compounds as well.

  17. Room temperature magnetocaloric effect, critical behavior, and magnetoresistance in Na-deficient manganite La{sub 0.8}Na{sub 0.1}MnO{sub 3}

    SciTech Connect

    Khlifi, M. Dhahri, E.; Hlil, E. K.

    2014-05-21

    The La{sub 0.8}Na{sub 0.1}MnO{sub 3} oxide was prepared by the solid-state reaction and annealed in air. The X-ray diffraction data reveal that the sample is crystallized in a rhombohedral structure with R3{sup ¯}c space group. Magnetic study shows a second-order magnetic phase transition from ferromagnetic to paramagnetic state at the Curie temperature T{sub C} = 295 K. In addition, the magnetizations as a function of temperature and the magnetic field is used to evaluate the magnetic entropy change ΔS{sub M}. Then, we have deduced that the La{sub 0.8}Na{sub 0.1}MnO{sub 3} oxide has a large magnetocaloric effect at room temperature. Such effect is given by the maximum of the magnetic entropy change ΔS{sub Mmax} = 5.56, and by the Relative cooling power (RCP) factor which is equal to 235 under a magnetic field of 5 T. Moreover, the magnetic field dependence of the magnetic entropy change is used to determine the critical exponents β, γ, and δ which are found to be β = 0.495, γ = 1.083, and δ = 3.18. These values are consistent with the prediction of the mean field theory (β = 0.5, γ = 1, and δ = 3). Above all, the temperature dependence of electrical resistivity shows a metal–insulator transition at T{sub ρ}. The electrical resistivity decrease when we apply a magnetic field giving a magnetoresistance effect in the order of 60% at room temperature.

  18. Griffiths phase and the magnetic and transport properties of doped manganites

    SciTech Connect

    Krivoruchko, V. N. Marchenko, M. A.

    2012-07-15

    A phenomenological model is proposed to describe the magnetic and magnetoresistance properties of ferromagnetic manganites. This model is based on the methods used to describe hysteretic systems, takes into account phase separation effects, and assumes the transition of ferromagnetic manganites into the Griffiths phase at above the Curie temperature. This formalism makes it possible to describe the conducting properties of the systems in the temperature range from low temperatures to the Griffiths temperature (T{sub G}). This approach is used to qualitatively explain the experimental laws of the behavior of ferromagnetic manganites using the temperature and field dependences of the electrical resistivity and magnetization, the hysteretic properties, and the magnetoresistive effect (MRE) and to classify manganites in the magnitude of the MRE. The parameter that is responsible for the response of a system to thermal effects is the ratio of the maximum energy barrier separating various states of a system at zero temperature W{sub A}(0) to thermal fluctuation energy W{sub Cfl} at T{sub G}. The W{sub A}(0)/W{sub Cfl} ratio is found to determine the temperature range of the Griffiths phase. The relation between the magnitudes of the MRE and parameter W{sub A}(0)/W{sub Cfl} for a certain system is revealed. The behavior of the magnetization and electrical resistivity of manganites in the Griffiths phase is discussed.

  19. Lattice Distortion, Polaron Conduction, and Jahn-Teller Effect on teh Magnetoresistance of La(sub 0.7)Ca(sub 0.5)CoO(sub 3) Epitaxial Films

    NASA Technical Reports Server (NTRS)

    Yeh, N. C.; Vasquez, R. P.; Beam, D. A.; Fu, C. C.; Huynh, H.; Beach, G.

    1996-01-01

    In summary, we have investigated the role of lattice distortion, polaron conduction and Jahn-Teller coupling in the occurrence of the colossal negative magnetoresistance in perovskite oxides. We conclude that larger lattice distortion gives rise to larger zero-field resistivity and larger magnitude of negative magnetoresistance.

  20. Effect of electric field and strain on the magnetic properties of phase separated manganites

    NASA Astrophysics Data System (ADS)

    Grant, Daniel M.

    Perovskite manganese oxide (manganites) have attracted research attention due to a wide variety of complex behaviors observed, including colossal responses to external perturbations. More recent work has focused on the competing ground states and the coexistence of magnetic and non-magnetic phases in manganites. Anisotropic resistance changes have been observed in high quality thin film manganites, possibly due to dielectrophoresis, upon application of an electric field. Dielectrophoresis is usually observed in fluid-like systems in an electric field but is surprisingly useful in explaining the transport properties of manganites due to the fluid-like behavior of competing phases. A main goal of this dissertation is to explore the role of magnetic interactions on the dielectrophoresis effects on ferromagnetic metallic regions in phase separated manganite thin films. The combined effect of electric and magnetic fields in these manganites could reveal a novel form of magnetoelectric effect. In one set of experiments, a magnetic field decreased the amount of time needed for the dielectrophoresis to lead to a large drop in the resistance along one direction, showing the importance of magnetic interactions in dielectrophoresis. In another set of experiments, breaking down the large resistance of a manganite sample produced a small change in coercive field, further confirming the relationship between electric and magnetic effects in manganites. However, the largest effect on the magnetic properties of the thin films was from confinement of the competing phases in micrometer scale structures fabricated on the thin films. Coercive field increases of about 100- 400% were observed in a certain range of film thicknesses. To analyze such behavior in manganites, high quality thin films of the phase-separated manganite (La1-xPrx)1-yCa yMnO3 (LPCMO) were grown on NdGaO3 (NGO) substrates using pulsed laser deposition. Mangetotransport, magnetization, and scanning probe microscopy

  1. Nanopillar spin filter tunnel junctions with manganite barriers.

    PubMed

    Prasad, Bhagwati; Egilmez, Mehmet; Schoofs, Frank; Fix, Thomas; Vickers, Mary E; Zhang, Wenrui; Jian, Jie; Wang, Haiyan; Blamire, Mark G

    2014-05-14

    The potential of a manganite ferromagnetic insulator in the field of spin-filtering has been demonstrated. For this, an ultrathin film of Sm0.75Sr0.25MnO3 is integrated as a barrier in an epitaxial oxide nanopillar tunnel junction and a high spin polarization of up to 75% at 5 K has been achieved. A large zero-bias anomaly observed in the dynamic conductance at low temperatures is explained in terms of the Kondo scattering model. In addition, a decrease in spin polarization at low bias and hysteretic magneto-resistance at low temperatures are reported. The results open up new possibilities for spin-electronics and suggest exploration of other manganites-based materials for the room temperature spin-filter applications.

  2. Huge positive magnetoresistance in antiferromagnetic double perovskite metals

    NASA Astrophysics Data System (ADS)

    Nand Singh, Viveka; Majumdar, Pinaki

    2014-07-01

    Metals with large positive magnetoresistance are rare. We demonstrate that antiferromagnetic metallic states, as have been predicted for the double perovskites, are excellent candidates for huge positive magnetoresistance. An applied field suppresses long range antiferromagnetic order leading to a state with short range antiferromagnetic correlations and strong electronic scattering. The field induced resistance ratio can be more than tenfold, at moderate field, in a structurally ordered system, and continues to be almost twofold even in systems with ˜25% antisite disorder. Although our explicit demonstration is in the context of a two- dimensional spin-fermion model of the double perovskites, the mechanism we uncover is far more general, complementary to the colossal negative magnetoresistance process, and would operate in other local moment metals that show a field driven suppression of non-ferromagnetic order.

  3. Huge positive magnetoresistance in antiferromagnetic double perovskite metals.

    PubMed

    Singh, Viveka Nand; Majumdar, Pinaki

    2014-07-23

    Metals with large positive magnetoresistance are rare. We demonstrate that antiferromagnetic metallic states, as have been predicted for the double perovskites, are excellent candidates for huge positive magnetoresistance. An applied field suppresses long range antiferromagnetic order leading to a state with short range antiferromagnetic correlations and strong electronic scattering. The field induced resistance ratio can be more than tenfold, at moderate field, in a structurally ordered system, and continues to be almost twofold even in systems with ∼ 25% antisite disorder. Although our explicit demonstration is in the context of a two- dimensional spin-fermion model of the double perovskites, the mechanism we uncover is far more general, complementary to the colossal negative magnetoresistance process, and would operate in other local moment metals that show a field driven suppression of non-ferromagnetic order.

  4. Realistic theoretical study of long range order in half-doped manganites

    NASA Astrophysics Data System (ADS)

    Volja, Dmitri

    The exploration of distinct orders and their mutual interplay in systems with transition metal elements is of significant importance to condensed matter physicists, as these orders may provide a way to tune material properties, giving rise to a wide practical application of these materials in industry. Usually these orders involve spin, orbital, charge and lattice degrees of freedom, providing diverse phase diagrams and interesting physical properties, such as superconductivity, thermopower, colossal magnetoresistance (CMR) etc. To have a clear understanding of the problem, one needs to have a deep understanding of the origin and stability of these systems, including the role of leading mechanisms and their mutual coupling. Currently these issues are under great debate in the literature. Manganese oxides, such as La1-xCa xMnO3 have attracted considerable attention due to the observed CMR effect at certain levels of doping (x ≈ 0.2--0.4). To gain a deeper microscopic insight on the issue, we developed a novel, three-step approach within Wannier states framework, that allows one to map out most relevant mechanisms and evaluate their relative importance. Based on the LDA+U results, as a starting point, we derive a low-energy Hamiltonian, that includes all relevant interactions. In the second step we construct Wannier states from relevant e g states close to the Fermi level via a unitary transformation and subject to certain imposed constraints. We use these states as a basis of our further calculations. In the third step, we perform a self-consistent mapping of the low-energy Hamiltonian to the LDA+U results expressed in terms of the same Wannier states basis. As a result, the Hamiltonian parameters are evaluated. These parameters are used to evaluate the contribution of various interaction terms in the Hamiltonian separately. In addition, this framework allows natural solution of a current discrepancy between the weak charge disproportion in doped manganites and

  5. Organic Magnetoresistance

    NASA Astrophysics Data System (ADS)

    Epstein, Arthur

    2009-03-01

    In recent years a broad range of magnetoresistance phenomena have been reported for organic-based semiconductors, conductors and magnets. Organic systems illustrating magnetoresistance, include molecular- and polymer-based nonmagnetic semiconductors[1], organic-based spin polarized magnetic semiconductors,[2] nonmagnetic conducting polymers, and ferromagnet/organic semiconductor/ferromagnet heterojunctions. Examples of each of these organic-based systems will be presented together with a discussion of the roles of magnetotransport mechanisms including interconversion of singlets and triplets, compression of the electronic wavefunction in presence of a magnetic field, quantum interference phenomena, effects of a ``Coulomb gap'' in π* subbands of organic magnetic semiconductors with resulting near complete spin polarization in conduction and valence bands of magnetic organic semiconductors.[2,3] Opportunities for magnetotransport in Ferromagnet/Organic Semiconductor/Ferromagnet heterojunctions will be discussed.[4] [4pt] [1] V.N. Prigodin et al., Synth. Met. 156, 757 (2006); J.D. Bergeson et al., Phys. Rev. Lett. 100, 067201 (2008) [0pt] [2] V.N. Prigodin et al., Adv. Mater. 14, 1230 (2002. [0pt] [3] J.B. Kortright et al., Phys. Rev. Lett., 100, 257204 (2008). [0pt] [4] J.D. Bergeson, et al., Appl. Phys. Lett. 93, 172505 (2008).

  6. Local lattice distortions and thermal transport in perovskite manganites

    SciTech Connect

    Cohn, J.L.; Neumeier, J.J.; Popoviciu, C.P.; McClellan, K.J.; Leventouri, T.

    1997-10-01

    Measurements of thermal conductivity versus temperature and magnetic field are reported for perovskite manganites that exhibit ferromagnetic (FM), charge-ordering (CO), antiferromagnetic, and/or structural phase transitions. The data reveal a dominant lattice contribution to the heat conductivity with {kappa}{approximately}1{minus}2 W/mK near room temperature. The rather low values, implying a phonon mean free path on the order of a lattice spacing, are shown to correlate with static local distortions of the MnO{sub 6} octahedra. Modifications of the local structure are responsible for abrupt anomalies in the zero-field {kappa} at the FM, CO, and structural transitions, and for colossal magnetothermal resistance near the FM transition. {copyright} {ital 1997} {ital The American Physical Society}

  7. Martensitic accommodation strain and the metal-insulator transition in manganites

    NASA Astrophysics Data System (ADS)

    Podzorov, V.; Kim, B. G.; Kiryukhin, V.; Gershenson, M. E.; Cheong, S.-W.

    2001-10-01

    In this paper, we report polarized optical microscopy and electrical transport studies of manganese oxides that reveal that the charge ordering transition in these compounds exhibits typical signatures of a martensitic transformation. We demonstrate that specific electronic properties of charge-ordered manganites stem from a combination of martensitic accommodation strain and effects of strong electron correlations. This intrinsic strain is strongly affected by the grain boundaries in ceramic samples. Consistently, our studies show a remarkable enhancement of low field magnetoresistance and the grain size effect on the resistivity in polycrystalline samples and suggest that the transport properties of this class of manganites are governed by the charge-disordered insulating phase stabilized at low temperature by virtue of martensitic accommodation strain. High sensitivity of this phase to strains and magnetic field leads to a variety of striking phenomena, such as unusually high magnetoresistance (1010%) in low magnetic fields.

  8. Magnetocaloric-transport properties correlation in doped manganites

    NASA Astrophysics Data System (ADS)

    Mohamed, Abd El-Moez A.; Hernando, B.; Ahmed, A. M.

    2016-05-01

    This investigation is interested in studying the relation between magnetocaloric effect and transport properties in La0.7Ba0.3MnO3 manganite compound. The resistivity shows a metal-semiconductor transition at Tms temperature near to its reported Curie temperature (Tc). Magnetic field application decreases resistivity and increases Tms towards higher temperatures. The magnetoresistance shows a peak around Tc and increases in value with the applied magnetic field. A similar behavior has been observed between magnetic entropy change (ΔS), resistivity and magnetoresistance around Tc, this is attributed to the spin order/disorder feature that plays a main role in the magnetocaloric-transport correlation. In spite of this similarity, the correspondence among the experimental ΔS and ΔS based resistivity calculations is missing because of lattice polarons effect on resistivity as a result of the electron-phonon interaction. The magnetocaloric-magnetoresistance relation is also studied and results show the contribution of additional factors in the magnetoresistance mechanism other than spin disorder suppression as Jahn-Teller effect and electronic phase separation.

  9. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    PubMed

    Stamopoulos, D; Aristomenopoulou, E

    2015-08-26

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  10. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

    PubMed Central

    Stamopoulos, D.; Aristomenopoulou, E.

    2015-01-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis. PMID:26306543

  11. A Magnetoresistance Measuring Probe.

    DTIC Science & Technology

    The in line four point probe, commonly used for measuring the sheet resistance in a conductor, cannot measure the anisotropic ferromagnetic magnetoresistance. However, the addition of two contact points that are not collinear with the current contacts give the probe the ability to non-destructively measure the anistropic magnetoresistance. Keywords: Magnetoresistance; Anisotropic; Thin-Film; Permalloy; Four Point Probe; Anisotropic Resistance.

  12. A composition-spread approach to investigate band-filling dependence on magnetic and electronic phases for Perovskite manganite

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Okimoto, Y.; Ohtani, M.; Kageyama, T.; Koida, T.; Kawasaki, M.; Hasegawa, T.; Tokura, Y.; Koinuma, H.

    2002-04-01

    As-grown epitaxial composition-spread thin films of a colossal magnetoresistive compound, La 1- xSr xMnO 3 (0≤ x≤1), are fabricated by a combinatorial laser molecular beam epitaxy (laser MBE). High throughput characterization for studying x dependencies of structural, magnetic and electronic properties is demonstrated by the combination of a concurrent X-ray diffractometer, a scanning superconducting quantum interference device (SQUID) microscope and an infrared microscope spectrometer, respectively.

  13. Manganite films: Tuning phase diagrams

    NASA Astrophysics Data System (ADS)

    Mihailovic, Dragan

    2016-09-01

    Strain engineering can tune a manganite film into an antiferromagnetic insulating state whose extreme photo-susceptibility allows for the ordinary ferromagnetic metal state to then be transiently realized.

  14. Thermal magnetoresistance of potassium

    NASA Astrophysics Data System (ADS)

    Huberman, M. L.

    1988-11-01

    It has recently been shown that an inhomogeneous, anisotropic Hall coefficient, arising from a charge-density-wave domain structure, explains the nonsaturating electrical magnetoresistance of potassium. It is shown here that the same mechanism also explains the observed behavior of the thermal magnetoresistance. The transverse thermal magnetoresistance of a domain structure increases with increasing field, having both a linear and quadratic component. The longitudinal thermal magnetoresistance of a domain structure initially increases linearly with increasing field. Its behavior in higher fields, however, depends on whether or not the domain distribution is symmetric about the field direction. If the distribution is symmetric, saturation occurs; otherwise, a residual increase is possible.

  15. Controlled mechnical modification of manganite surface with nanoscale resolution.

    PubMed

    Kelly, Simon J; Kim, Yunseok; Eliseev, Eugene; Morozovska, Anna; Jesse, Stephen; Biegalski, Michael D; Mitchell, J F; Zheng, H; Aarts, J; Hwang, Inrok; Oh, Sungtaek; Choi, Jin Sik; Choi, Taekjib; Park, Bae Ho; Kalinin, Sergei V; Maksymovych, Peter

    2014-11-28

    We investigated the surfaces of magnetoresistive manganites, La(1-x)Ca(x)MnO3 and La(2-2x)Sr(1+2x)Mn2O7, using a combination of ultrahigh vacuum conductive, electrostatic and magnetic force microscopy methods. Scanning as-grown film with a metal tip, even with zero applied bias, was found to modify the surface electronic properties such that in subsequent scans, the conductivity is reduced below the noise level of conductive probe microscopy. Scanned areas also reveal a reduced contact potential difference relative to the pristine surface by ∼0.3 eV. We propose that contact-pressure of the tip modifies the electrochemical potential of oxygen vacancies via the Vegard effect, causing vacancy motion and concomitant changes of the electronic properties.

  16. Controlled mechnical modification of manganite surface with nanoscale resolution

    DOE PAGES

    Kelly, Simon J.; Kim, Yunseok; Eliseev, Eugene; ...

    2014-11-07

    We investigated the surfaces of magnetoresistive manganites, La1-xCaxMnO3 and La2-2xSr1+2xMn2O7, using a combination of ultrahigh vacuum conductive, electrostatic and magnetic force microscopy methods. Scanning as-grown film with a metal tip, even with zero applied bias, was found to modify the surface electronic properties such that in subsequent scans, the conductivity is reduced below the noise level of conductive probe microscopy. Scanned areas also reveal a reduced contact potential difference relative to the pristine surface by ~0.3 eV. We propose that contact-pressure of the tip modifies the electrochemical potential of oxygen vacancies via the Vegard effect, causing vacancy motion and concomitantmore » changes of the electronic properties.« less

  17. Controlled mechnical modification of manganite surface with nanoscale resolution

    SciTech Connect

    Kelly, Simon J.; Kim, Yunseok; Eliseev, Eugene; Morozovska, Anna; Jesse, Stephen; Biegalski, Michael D.; Mitchell, J. F.; Zheng, H.; Aarts, J.; Hwang, Inrok; Oh, Sungtaek; Sik Choi, Jin; Choi, Taekjib; Ho Park, Bae; Kalinin, Sergei V.; Maksymovych, Peter

    2014-11-07

    We investigated the surfaces of magnetoresistive manganites, La1-xCaxMnO3 and La2-2xSr1+2xMn2O7, using a combination of ultrahigh vacuum conductive, electrostatic and magnetic force microscopy methods. Scanning as-grown film with a metal tip, even with zero applied bias, was found to modify the surface electronic properties such that in subsequent scans, the conductivity is reduced below the noise level of conductive probe microscopy. Scanned areas also reveal a reduced contact potential difference relative to the pristine surface by ~0.3 eV. We propose that contact-pressure of the tip modifies the electrochemical potential of oxygen vacancies via the Vegard effect, causing vacancy motion and concomitant changes of the electronic properties.

  18. Manganite perovskite ceramics, their precursors and methods for forming

    DOEpatents

    Payne, David Alan; Clothier, Brent Allen

    2015-03-10

    Disclosed are a variety of ceramics having the formula Ln.sub.1-xM.sub.xMnO.sub.3, where 0.Itoreq.x.Itoreq.1 and where Ln is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or Y; M is Ca, Sr, Ba, Cd, or Pb; manganite precursors for preparing the ceramics; a method for preparing the precursors; and a method for transforming the precursors into uniform, defect-free ceramics having magnetoresistance properties. The manganite precursors contain a sol and are derived from the metal alkoxides: Ln(OR).sub.3, M(OR).sub.2 and Mn(OR).sub.2, where R is C.sub.2 to C.sub.6 alkyl or C.sub.3 to C.sub.9 alkoxyalkyl, or C.sub.6 to C.sub.9 aryl. The preferred ceramics are films prepared by a spin coating method and are particularly suited for incorporation into a device such as an integrated circuit device.

  19. Surface nanostructures in manganite films.

    PubMed

    Gambardella, A; Graziosi, P; Bergenti, I; Prezioso, M; Pullini, D; Milita, S; Biscarini, F; Dediu, V A

    2014-06-19

    Ultrathin manganite films are widely used as active electrodes in organic spintronic devices. In this study, a scanning tunnelling microscopy (STM) investigation with atomic resolution revealed previously unknown surface features consisting of small non-stoichiometric islands. Based upon this evidence, a new mechanism for the growth of these complex materials is proposed. It is suggested that the non-stoichiometric islands result from nucleation centres that are below the critical threshold size required for stoichiometric crystalline growth. These islands represent a kinetic intermediate of single-layer growth regardless of the film thickness, and should be considered and possibly controlled in manganite thin-film applications.

  20. Phase separation in lanthanum manganites

    NASA Astrophysics Data System (ADS)

    Sedykh, Vera D.

    2016-10-01

    The structural transformations in doped lanthanum manganites La1-xMexMnO3+δ (Me = Ca, Sr, Ba) (with a small amount of 57Fe (2%) for Mössbauer experiments) have been studied in a wide concentration range of a doping element (0 < x < 0.2) by Mössbauer spectroscopy and X-ray diffraction analysis. A mixture of three orthorhombic phases has been shown to be formed in all these compounds of a stoichiometric composition, i.e., a structural phase separation takes place. The phase relations for different doping element types and contents significantly differ. The reasons of phase separation in lanthanum manganites are discussed.

  1. Surface Nanostructures in Manganite Films

    PubMed Central

    Gambardella, A.; Graziosi, P.; Bergenti, I.; Prezioso, M.; Pullini, D.; Milita, S.; Biscarini, F.; Dediu, V. A.

    2014-01-01

    Ultrathin manganite films are widely used as active electrodes in organic spintronic devices. In this study, a scanning tunnelling microscopy (STM) investigation with atomic resolution revealed previously unknown surface features consisting of small non-stoichiometric islands. Based upon this evidence, a new mechanism for the growth of these complex materials is proposed. It is suggested that the non-stoichiometric islands result from nucleation centres that are below the critical threshold size required for stoichiometric crystalline growth. These islands represent a kinetic intermediate of single-layer growth regardless of the film thickness, and should be considered and possibly controlled in manganite thin-film applications. PMID:24941969

  2. Current-voltage characteristics of manganite-titanite perovskite junctions.

    PubMed

    Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael; Jooss, Christian

    2015-01-01

    After a general introduction into the Shockley theory of current voltage (J-V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite-titanate p-n heterojunctions made of n-doped SrTi1- y Nb y O3, y = 0.002 and p-doped Pr1- x Ca x MnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J-V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron-polaron hole-polaron pair generation and separation at the interface.

  3. Magnetoelectric and magneto-dielectric effects in multiferroic manganites

    NASA Astrophysics Data System (ADS)

    Hur, Namjung

    2004-12-01

    Ferroelectric and magnetic materials have been a time-honored subject of study and have lead to some of the most important technological advances to date. Magnetic ordering is governed by the exchange interaction of the electron spins, while ferroelectric ordering is governed by the off-center structural distortions in the lattice. These two seemingly unrelated phenomena can actually coexist in certain unusual materials, termed multiferroics. The understanding of this remarkable occurrence remains a scientific challenge. Despite the possible coexistence of ferroelectricity and magnetism, any profound interplay between them has been rarely observed. This fact has largely prevented the realization of devices with a previously unavailable functionality, which these multiferroics could make possible. Herein, I have explored several multiferroic materials, which show astonishing interplays between ferroelectricity and magnetism during the course of my dissertation. A number of new discoveries have been made in the multiferroic manganites. Especially, polarization reversal by magnetic field and colossal magneto-capacitance effect have been observed in ThMn2O5 and DyMn2O5, respectively.

  4. Transport properties and electroresistance of a manganite based heterostructure: role of the manganite-manganite interface.

    PubMed

    Gadani, Keval; Dhruv, Davit; Joshi, Zalak; Boricha, Hetal; Rathod, K N; Keshvani, M J; Shah, N A; Solanki, P S

    2016-06-29

    In this paper, we report the results of the investigations on the transport properties performed across the manganite-manganite interface in the LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 (LMO/LCMO/LAO) heterostructure. The bilayered heterostructure was synthesized by a low cost and simple chemical solution deposition (CSD) method by employing the acetate precursor route. The same LMO/LCMO/LAO heterostructure was also grown using the dry metal oxide chemical vapor deposition (CVD) method and the results of transport characterization have been compared on the basis of wet and dry chemical methods used. XRD Φ-scan measurements were carried out to verify the structural quality and crystallographic orientations of LMO and LCMO manganite layers, for both wet and dry chemical method grown heterostructures. For wet and dry chemical methods, the temperature dependent resistance of the LMO/LCMO interface suggests the metallic nature. The asymmetric I-V curves collected at different temperatures show normal diode characteristics which get transformed to backward diode characteristics at high temperatures under high applied voltages at Vtr for both the methods. The values of Vtr are strongly dependent on the chemical method used. I-V data have been fitted using the Simmons model at different temperatures and discussed in terms of the spin-flip scattering mechanism for both wet and dry chemical method grown heterostructures. The electric field dependent electroresistance (ER) behavior of the presently studied LMO/LCMO manganite-manganite interface, grown using wet and dry chemical methods, has been understood on the basis of complex mechanisms including charge injection, formation of the depletion region, the tunneling effect, thermal processes and junction breakdown and their dependence on the applied electric field, field polarity and temperature studied.

  5. Magnetoresistive waves in plasmas

    NASA Astrophysics Data System (ADS)

    Felber, F. S.; Hunter, R. O., Jr.; Pereira, N. R.; Tajima, T.

    1982-10-01

    The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed.

  6. Magnetocaloric effect in manganites

    SciTech Connect

    Koroleva, L. I. Zashchirinskii, D. M.; Morozov, A. S.; Szymczak, R.

    2012-10-15

    The magnetocaloric effect (MCE) in La{sub 1-x}Sr{sub x}MnO{sub 3}, Sm{sub 0.55}Sr{sub 0.45}MnO{sub 3}, and PrBaMn{sub 2}O{sub 6} compounds is studied. The maximum values of MCE ({Delta}T{sub max}) determined by a direct method in the second and third compositions and in La{sub 0.9}Sr{sub 0.1}MnO{sub 3} are found to be much lower than those calculated from the change of the magnetic part of entropy in the Curie temperature (T{sub C}) and the Neel temperature (T{sub N}) range. The negative contribution of the antiferromagnetic (AFM) part of a sample in the La{sub 1-x}Sr{sub x}MnO{sub 3} system at 0.1 {<=} x {<=} 0.3 decreases {Delta}T{sub max} and changes the {Delta}T(T) curve shape, shifting its maximum 20-40 K above T{sub C}. Lower values of {Delta}T{sub max} are detected in the range T{sub C} = 130-142 K in polycrystalline and single-crystal Sm{sub 0.55}Sr{sub 0.45}MnO{sub 3} samples cooled in air. If such samples were cooled in an oxygen atmosphere (which restores broken Mn-O-Mn bonds and, thus, increases the volume of CE-type AFM clusters), the maximum in the temperature dependence of MCE is located at T{sub N} (243 K) for CE-type AFM clusters. A magnetic field applied to a sample during the MCE measurements transforms these clusters into a ferromagnetic (FM) state, and both types of clusters decompose at T = T{sub N}. The PrBaMn{sub 2}O{sub 6} composition undergoes an AFM-FM transition at 231 K, and the temperature dependence of its MCE has a sharp minimum at T = 234 K, where MCE is negative, and a broad maximum covering T{sub C}. The absolute values of MCE at both extrema are several times lower than those calculated from the change in the magnetic entropy. These phenomena are explained by the presence of a magnetically heterogeneous FM-AFM state in these manganites.

  7. Low-Temperature Electrical Resistivity of Bilayered LaSr2Mn2O_{7 } Manganite

    NASA Astrophysics Data System (ADS)

    Ehsani, M. H.; Mehrabad, M. Jalali; Kameli, P.; Ghazi, M. E.; Razavi, F. S.

    2016-06-01

    Low-temperature transport and magneto-resistance properties were systemically studied for the bilayered polycrystalline LaSr2Mn2O7 manganite under an applied magnetic field from 0 to 9 T. The results obtained from the resistivity measurements between 70 and 130 K were fitted using the electron-electron (e-e) and electron-magnon (e-m) scattering models. The temperature dependence of resistivity showed an upturn behavior at low temperatures (˜ T < 45 K) under various applied magnetic fields. Best fits were obtained by using a variable-range hopping model. The magneto-resistance behavior observed at low temperatures supports the magnetic properties of the sample.

  8. Multiferroicity in Perovskite Manganite Superlattice

    NASA Astrophysics Data System (ADS)

    Tao, Yong-Mei; Jiang, Xue-Fan; Liu, Jun-Ming

    2016-08-01

    Multiferroic properties of short period perovskite type manganite superlattice ((R1MnO3)n/(R2MnO3)n (n=1,2,3)) are considered within the framework of classical Heisenberg model using Monte Carlo simulation. Our result revealed the interesting behaviors in Mn spins structure in superlattice. Apart from simple plane spin cycloid structure which is shown in all manganites including bulk, film, and superlattice here in low temperature, a non-coplanar spiral spin structure is exhibited in a certain temperature range when n equals 1, 2 or 3. Specific heat, spin-helicity vector, spin correlation function, spin-helicity correlation function, and spin configuration are calculated to confirm this non-coplanar spiral spin structure. These results are associated with the competition among exchange interaction, magnetic anisotropy, and Dzyaloshinskii-Moriya interaction. Supported by the National Natural Science Foundation of China (NSFC) under Grant No. 11447136

  9. Direct and real time probe of photoinduced structure transition in colossal magnetoresistive material

    SciTech Connect

    Li, Junjie; Wang, Xuan; Zhou, Haidong; Zhou, Jun; Cao, Jianming; Cheng, J. G.

    2016-07-25

    We report a direct and real time measurement of photoinduced structure phase transition in single crystal La{sub 0.84}Sr{sub 0.16}MnO{sub 3} using femtosecond electron diffraction. The melting of orthorhombic lattice ordering under femtosecond optical excitation is found involving two distinct processes with different time scales, an initial fast melting of orthorhombic phase in about 4 ps and a subsequent slower transformation in 90 ps and longer timescales. The fast process is designated as the initial melting of orthorhombic phase induced by the Mn-O bond change that is most likely driven by the quenching of the dynamic Jahn-Teller distortion following the photo-excitation. The slow process is attributed to the growing of newly formed structure domain from the photo-excited sites to the neighboring non-excited orthorhombic sites.

  10. Direct and real time probe of photoinduced structure transition in colossal magnetoresistive material

    DOE PAGES

    Li, Junjie; Wang, Xuan; Zhou, Haidong; ...

    2016-07-29

    Here, we report a direct and real time measurement of photoinduced structure phase transition in single crystal La0.84Sr0.16MnO3 using femtosecond electron diffraction. The melting of orthorhombic lattice ordering under femtosecond optical excitation is found involving two distinct processes with different time scales, an initial fast melting of orthorhombic phase in about 4 ps and a subsequent slower transformation in 90 ps and longer timescales. Furthermore, the fast process is designated as the initial melting of orthorhombic phase induced by the Mn-O bond change that is most likely driven by the quenching of the dynamic Jahn-Teller distortion following the photo-excitation. Wemore » attribute the slow process to the growing of newly formed structure domain from the photo-excited sites to the neighboring non-excited orthorhombic sites.« less

  11. Pulsed magnetic field measurement system based on colossal magnetoresistance-B-scalar sensors for railgun investigation.

    PubMed

    Stankevič, T; Medišauskas, L; Stankevič, V; Balevičius, S; Żurauskienė, N; Liebfried, O; Schneider, M

    2014-04-01

    A high pulsed magnetic field measurement system based on the use of CMR-B-scalar sensors was developed for the investigations of the electrodynamic processes in electromagnetic launchers. The system consists of four independent modules (channels) which are controlled by a personal computer. Each channel is equipped with a CMR-B-scalar sensor connected to the measurement device-B-scalar meter. The system is able to measure the magnitude of pulsed magnetic fields from 0.3 T to 20 T in the range from DC up to 20 kHz independently of the magnetic field direction. The measurement equipment circuit is electrically separated from the ground and shielded against low and high frequency electromagnetic noise. The B-scalar meters can be operated in the presence of ambient pulsed magnetic fields with amplitudes up to 0.2 T and frequencies higher than 1 kHz. The recorded signals can be transmitted to a personal computer in a distance of 25 m by means of a fiber optic link. The system was tested using the electromagnetic railgun RAFIRA installed at the French-German Research Institute of Saint-Louis, France.

  12. Direct and real time probe of photoinduced structure transition in colossal magnetoresistive material

    NASA Astrophysics Data System (ADS)

    Li, Junjie; Wang, Xuan; Zhou, Haidong; Zhou, Jun; Cheng, J. G.; Cao, Jianming

    2016-07-01

    We report a direct and real time measurement of photoinduced structure phase transition in single crystal La0.84Sr0.16MnO3 using femtosecond electron diffraction. The melting of orthorhombic lattice ordering under femtosecond optical excitation is found involving two distinct processes with different time scales, an initial fast melting of orthorhombic phase in about 4 ps and a subsequent slower transformation in 90 ps and longer timescales. The fast process is designated as the initial melting of orthorhombic phase induced by the Mn-O bond change that is most likely driven by the quenching of the dynamic Jahn-Teller distortion following the photo-excitation. The slow process is attributed to the growing of newly formed structure domain from the photo-excited sites to the neighboring non-excited orthorhombic sites.

  13. Direct and real time probe of photoinduced structure transition in colossal magnetoresistive material

    SciTech Connect

    Li, Junjie; Wang, Xuan; Zhou, Haidong; Zhou, Jun; Cheng, J. G.; Cao, Jianming

    2016-07-29

    Here, we report a direct and real time measurement of photoinduced structure phase transition in single crystal La0.84Sr0.16MnO3 using femtosecond electron diffraction. The melting of orthorhombic lattice ordering under femtosecond optical excitation is found involving two distinct processes with different time scales, an initial fast melting of orthorhombic phase in about 4 ps and a subsequent slower transformation in 90 ps and longer timescales. Furthermore, the fast process is designated as the initial melting of orthorhombic phase induced by the Mn-O bond change that is most likely driven by the quenching of the dynamic Jahn-Teller distortion following the photo-excitation. We attribute the slow process to the growing of newly formed structure domain from the photo-excited sites to the neighboring non-excited orthorhombic sites.

  14. Direct and real time probe of photoinduced structure transition in colossal magnetoresistive material

    SciTech Connect

    Li, Junjie; Wang, Xuan; Zhou, Haidong; Zhou, Jun; Cheng, J. G.; Cao, Jianming

    2016-07-29

    Here, we report a direct and real time measurement of photoinduced structure phase transition in single crystal La0.84Sr0.16MnO3 using femtosecond electron diffraction. The melting of orthorhombic lattice ordering under femtosecond optical excitation is found involving two distinct processes with different time scales, an initial fast melting of orthorhombic phase in about 4 ps and a subsequent slower transformation in 90 ps and longer timescales. Furthermore, the fast process is designated as the initial melting of orthorhombic phase induced by the Mn-O bond change that is most likely driven by the quenching of the dynamic Jahn-Teller distortion following the photo-excitation. We attribute the slow process to the growing of newly formed structure domain from the photo-excited sites to the neighboring non-excited orthorhombic sites.

  15. High Temperature Superconducting Compounds.

    DTIC Science & Technology

    1999-04-02

    addition to superconducting films, non-superconducting mixed-valence manganite perovskites, which exhibit so-called colossal magnetoresistance were grown...The manganites are unique in that their charge carriers are believed to be almost 100% spin polarized. These materials were combined with the...brought about by the injection of spin polarized carriers from the manganite into the curate. This work may make possible new classes of devices based on

  16. Molecular anisotropic magnetoresistance

    NASA Astrophysics Data System (ADS)

    Otte, Fabian; Heinze, Stefan; Mokrousov, Yuriy

    2015-12-01

    Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules sandwiched between ferromagnetic leads. We study ballistic transport in metal-benzene complexes contacted by 3 d transition-metal wires. We show that a gigantic AMR can arise from spin-orbit coupling effects in the leads, drastically enhanced by orbital-symmetry filtering properties of the molecules. We further discuss how this molecular anisotropic magnetoresistance (MAMR) can be tuned by the proper choice of materials and their electronic properties.

  17. Longitudinal magnetoresistance of potassium

    NASA Astrophysics Data System (ADS)

    Huberman, M. L.

    1987-06-01

    Recently, Zhu and Overhauser showed that the Hall coefficient of potassium is anisotropic, depending on the angle between the applied magnetic field and the charge-density wave. It follows that the Hall coefficient of a polydomain sample is inhomogeneous. By means of effective-medium theory, the magnetoresistance of a domain structure has been evaluated. It is shown that both the longitudinal and transverse magnetoresistance increase with increasing field. The Kohler slope depends on the domain distribution. For a random distribution, the longitudinal and transverse Kohler slopes are about (1/2)% and 1(1/2)%, respectively.

  18. Optical evidence of quantum rotor orbital excitations in orthorhombic manganites

    NASA Astrophysics Data System (ADS)

    Kovaleva, N. N.; Kugel, K. I.; Potůček, Z.; Kusmartseva, O. E.; Goryachev, N. S.; Bryknar, Z.; Demikhov, E. I.; Trepakov, V. A.; Dejneka, A.; Kusmartsev, F. V.; Stoneham, A. M.

    2016-05-01

    In magnetic compounds with Jahn-Teller (JT) ions (such as Mn3+ or Cu2+), the ordering of the electron or hole orbitals is associated with cooperative lattice distortions. There the role of JT effect, although widely recognized, is still elusive in the ground state properties. Here we discovered that, in these materials, there exist excitations whose energy spectrum is described in terms of the total angular momentum eigenstates and is quantized as in quantum rotors found in JT centers. We observed features originating from these excitations in the optical spectra of a model compound LaMnO3 using ellipsometry technique. They appear clearly as narrow sidebands accompanying the electron transition between the JT split orbitals at neighboring Mn3+ ions, displaying anomalous temperature behavior around the Néel temperature T N ≈ 140 K. We present these results together with new experimental data on photoluminescence found in LaMnO3, which lend additional support to the ellipsometry implying the electronic-vibrational origin of the quantum rotor orbital excitations. We note that the discovered orbital excitations of quantum rotors may play an important role in many unusual properties observed in these materials upon doping, such as high-temperature superconductivity and colossal magnetoresistance.

  19. Emergent long-range magnetic ordering in manganite superlattices

    NASA Astrophysics Data System (ADS)

    Burganov, Bulat; Macke, Sebastian; Monkman, Eric; Adamo, Carolina; Shai, Daniel; Schlom, Darrell; Sawatzky, George; Shen, Kyle

    2015-03-01

    Complex oxides composed into atomically precise heterostructures host a plethora of new phenomena driven by interface effects, dimensionality, correlations and strain. An example is emergent ferromagnetism in the superlattices (SL) of LaMnO3/SrMnO3 and the dimensionality-driven metal insulator transition, still not well understood theoretically. We use soft x-ray scattering combined with SQUID magnetometry to determine the magnetic and orbital ordering in the (LaMnO3)2n /(SrMnO3)n SL for n =1,2,3,4. By composition this system is close to colossal-magnetoresistive La2/3Sr1/3MnO3, an FM metal below 400K. The system undergoes a metal-insulator transition with higher n and is believed to have a complex magnetic ordering. We observe an unexpected long-range order in the n =4 sample where the magnetic period is equal to two chemical periods. The observed half-order Bragg peaks show strong linear and no circular dichroism. The temperature and polarization dependence of reflectometry points towards alignment between A-type AFM orders in the neighboring LaMnO3 layers, which is very unusual and indicates a long range interaction acting across the thick SrMnO3 layers with nominally G-type spin configuration. We simulate the reflectometry data for several model spin configurations to further elucidate the nature of this ordering.

  20. Optical evidence of quantum rotor orbital excitations in orthorhombic manganites

    SciTech Connect

    Kovaleva, N. N.; Kugel, K. I.; Potůček, Z.; Kusmartseva, O. E.; Goryachev, N. S.; Bryknar, Z.; Demikhov, E. I.; Trepakov, V. A.; Dejneka, A.; Kusmartsev, F. V.; Stoneham, A. M.

    2016-05-15

    In magnetic compounds with Jahn–Teller (JT) ions (such as Mn{sup 3+} or Cu{sup 2+}), the ordering of the electron or hole orbitals is associated with cooperative lattice distortions. There the role of JT effect, although widely recognized, is still elusive in the ground state properties. Here we discovered that, in these materials, there exist excitations whose energy spectrum is described in terms of the total angular momentum eigenstates and is quantized as in quantum rotors found in JT centers. We observed features originating from these excitations in the optical spectra of a model compound LaMnO{sub 3} using ellipsometry technique. They appear clearly as narrow sidebands accompanying the electron transition between the JT split orbitals at neighboring Mn{sup 3+} ions, displaying anomalous temperature behavior around the Néel temperature T{sub N} ≈ 140 K. We present these results together with new experimental data on photoluminescence found in LaMnO{sub 3}, which lend additional support to the ellipsometry implying the electronic-vibrational origin of the quantum rotor orbital excitations. We note that the discovered orbital excitations of quantum rotors may play an important role in many unusual properties observed in these materials upon doping, such as high-temperature superconductivity and colossal magnetoresistance.

  1. Giant semiclassical magnetoresistance in high mobility TaAs{sub 2} semimetal

    SciTech Connect

    Wu, Desheng; Liao, Jian; Yi, Wei; Wang, Xia; Weng, Hongming E-mail: hmweng@iphy.ac.cn; Shi, Youguo E-mail: hmweng@iphy.ac.cn; Li, Yongqing; Dai, Xi; Fang, Zhong; Li, Peigang; Luo, Jianlin

    2016-01-25

    We report the observation of colossal positive magnetoresistance (MR) in single crystalline, high mobility TaAs{sub 2} semimetal. The excellent fit of MR by a single quadratic function of the magnetic field B over a wide temperature range (T = 2–300 K) suggests the semiclassical nature of the MR. The measurements of Hall effect and Shubnikov-de Haas oscillations, as well as band structure calculations, suggest that the giant MR originates from the nearly perfectly compensated electrons and holes in TaAs{sub 2}. The quadratic MR can even exceed 1 200 000% at B = 9 T and T = 2 K, which is one of the largest values among those of all known semi-metallic compounds, including the very recently discovered WTe{sub 2} and NbSb{sub 2}. The giant positive magnetoresistance in TaAs{sub 2} not only has a fundamentally different origin from the negative colossal MR observed in magnetic systems but also provides a nice complemental system that will be beneficial for applications in magnetoelectronic devices.

  2. Giant magnetoresistive sensor

    DOEpatents

    Stearns, Daniel G.; Vernon, Stephen P.; Ceglio, Natale M.; Hawryluk, Andrew M.

    1999-01-01

    A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.

  3. Magnetoresistance of Au films

    SciTech Connect

    Zhang, D. L.; Song, X. H.; Zhang, X.; Zhang, Xiaoguang

    2014-12-10

    Measurement of the magnetoresistance (MR) of Au films as a function of temperature and film thickness reveals a strong dependence on grain size distribution and clear violation of the Kohler s rule. Using a model of random resistor network, we show that this result can be explained if the MR arises entirely from inhomogeneity due to grain boundary scattering and thermal activation of grain boundary atoms.

  4. Magnetoresistance of Au films

    DOE PAGES

    Zhang, D. L.; Song, X. H.; Zhang, X.; ...

    2014-12-10

    Measurement of the magnetoresistance (MR) of Au films as a function of temperature and film thickness reveals a strong dependence on grain size distribution and clear violation of the Kohler s rule. Using a model of random resistor network, we show that this result can be explained if the MR arises entirely from inhomogeneity due to grain boundary scattering and thermal activation of grain boundary atoms.

  5. Magnetoresistive Emulsion Analyzer

    PubMed Central

    Lin, Gungun; Baraban, Larysa; Han, Luyang; Karnaushenko, Daniil; Makarov, Denys; Cuniberti, Gianaurelio; Schmidt, Oliver G.

    2013-01-01

    We realize a magnetoresistive emulsion analyzer capable of detection, multiparametric analysis and sorting of ferrofluid-containing nanoliter-droplets. The operation of the device in a cytometric mode provides high throughput and quantitative information about the dimensions and magnetic content of the emulsion. Our method offers important complementarity to conventional optical approaches involving ferrofluids, and paves the way to the development of novel compact tools for diagnostics and nanomedicine including drug design and screening. PMID:23989504

  6. Negative magnetoresistivity in holography

    NASA Astrophysics Data System (ADS)

    Sun, Ya-Wen; Yang, Qing

    2016-09-01

    Negative magnetoresistivity is a special magnetotransport property associated with chiral anomaly in four dimensional chiral anomalous systems, which refers to the transport behavior that the DC longitudinal magnetoresistivity decreases with increasing magnetic field. We calculate the longitudinal magnetoconductivity in the presence of back-reactions of the magnetic field to gravity in holographic zero charge and axial charge density systems with and without axial charge dissipation. In the absence of axial charge dissipation, we find that the quantum critical conductivity grows with increasing magnetic field when the backreaction strength is larger than a critical value, in contrast to the monotonically decreasing behavior of quantum critical conductivity in the probe limit. With axial charge dissipation, we find the negative magnetoresistivity behavior. The DC longitudinal magnetoconductivity scales as B in the large magnetic field limit, which deviates from the exact B 2 scaling of the probe limit result. In both cases, the small frequency longitudinal magnetoconductivity still agrees with the formula obtained from the hydrodynamic linear response theory, even in the large magnetic field limit.

  7. Chemical ordering suppresses large-scale electronic phase separation in doped manganites

    NASA Astrophysics Data System (ADS)

    Zhu, Yinyan; Du, Kai; Niu, Jiebin; Lin, Lingfang; Wei, Wengang; Liu, Hao; Lin, Hanxuan; Zhang, Kai; Yang, Tieying; Kou, Yunfang; Shao, Jian; Gao, Xingyu; Xu, Xiaoshan; Wu, Xiaoshan; Dong, Shuai; Yin, Lifeng; Shen, Jian

    2016-04-01

    For strongly correlated oxides, it has been a long-standing issue regarding the role of the chemical ordering of the dopants on the physical properties. Here, using unit cell by unit cell superlattice growth technique, we determine the role of chemical ordering of the Pr dopant in a colossal magnetoresistant (La1-yPry)1-xCaxMnO3 (LPCMO) system, which has been well known for its large length-scale electronic phase separation phenomena. Our experimental results show that the chemical ordering of Pr leads to marked reduction of the length scale of electronic phase separations. Moreover, compared with the conventional Pr-disordered LPCMO system, the Pr-ordered LPCMO system has a metal-insulator transition that is ~100 K higher because the ferromagnetic metallic phase is more dominant at all temperatures below the Curie temperature.

  8. Chemical ordering suppresses large-scale electronic phase separation in doped manganites

    PubMed Central

    Zhu, Yinyan; Du, Kai; Niu, Jiebin; Lin, Lingfang; Wei, Wengang; Liu, Hao; Lin, Hanxuan; Zhang, Kai; Yang, Tieying; Kou, Yunfang; Shao, Jian; Gao, Xingyu; Xu, Xiaoshan; Wu, Xiaoshan; Dong, Shuai; Yin, Lifeng; Shen, Jian

    2016-01-01

    For strongly correlated oxides, it has been a long-standing issue regarding the role of the chemical ordering of the dopants on the physical properties. Here, using unit cell by unit cell superlattice growth technique, we determine the role of chemical ordering of the Pr dopant in a colossal magnetoresistant (La1−yPry)1−xCaxMnO3 (LPCMO) system, which has been well known for its large length-scale electronic phase separation phenomena. Our experimental results show that the chemical ordering of Pr leads to marked reduction of the length scale of electronic phase separations. Moreover, compared with the conventional Pr-disordered LPCMO system, the Pr-ordered LPCMO system has a metal–insulator transition that is ∼100 K higher because the ferromagnetic metallic phase is more dominant at all temperatures below the Curie temperature. PMID:27053071

  9. Role of structure imperfection in the formation of the magnetotransport properties of rare-earth manganites with a perovskite structure

    NASA Astrophysics Data System (ADS)

    Pashchenko, A. V.; Pashchenko, V. P.; Prokopenko, V. K.; Turchenko, V. A.; Revenko, Yu. F.; Mazur, A. S.; Sycheva, V. Ya.; Liedienov, N. A.; Pitsyuga, V. G.; Levchenko, G. G.

    2017-01-01

    The structure, the structure imperfection, and the magnetoresistance, magnetotransport, and microstructure properties of rare-earth perovskite La0.3Ln0.3Sr0.3Mn1.1O3-δ manganites are studied by X-ray diffraction, thermogravimetry, electrical resistivity measurement, magnetic, 55Mn NMR, magnetoresistance measurement, and scanning electron microscopy. It is found that the structure imperfection increases, and the symmetry of a rhombohedrally distorted R3̅ c perovskite structure changes into its pseudocubic type during isovalent substitution for Ln = La3+, Pr3+, Nd3+, Sm3+, or Eu3+ when the ionic radius of an A cation decreases. Defect molar formulas are determined for a real perovskite structure, which contains anion and cation vacancies. The decrease in the temperatures of the metal-semiconductor ( T ms) and ferromagnet-paramagnet ( T C) phase transitions and the increase in electrical resistivity ρ and activation energy E a with increasing serial number of Ln are caused by an increase in the concentration of vacancy point defects, which weaken the double exchange 3 d 4(Mn3+)-2 p 6(O2-)-3 d 3(Mn4+)- V ( a)-3 d 4(Mn3+). The crystal structure of the compositions with Ln = La contains nanostructured planar clusters, which induce an anomalous magnetic hysteresis at T = 77 K. Broad and asymmetric 55Mn NMR spectra support the high-frequency electronic double exchange Mn3+(3 d 4) ↔ O2-(2 p 6) ↔ Mn4+(3 d 3) and indicate a heterogeneous surrounding of manganese by other ions and vacancies. A correlation is revealed between the tunneling magnetoresistance effect and the crystallite size. A composition-structure imperfection-property experimental phase diagram is plotted. This diagram supports the conclusion about a strong influence of structure imperfection on the formation of the magnetic, magnetotransport, and magnetoresistance properties of rare-earth perovskite manganites.

  10. Conductive mechanism in manganite materials

    NASA Astrophysics Data System (ADS)

    Liu, Xianming; Zhu, Hong; Zhang, Yuheng

    2002-01-01

    We describe a model in which f(T)=M(T)/Mmax represents both the fraction of the itinerant electron density in the double-exchange (DE) theory and the magnetization σ in the current carrier density collapse (CCDC) theory. With this model, we have checked the DE and CCDC theories with our experimental results of the transport behavior. The DE theory yields agreement with the experimental resistivity excellently, in which the conductivity is the sum of the polaronic and itinerant electronic conductivity for the insulator-metal transition regime. The fitting curves of the resistivity by the CCDC theory deviate from the experiment seriously. This might be caused by the improper assumption of the temperature-dependent carrier density and the temperature-independent carrier mobility. Therefore, it is concluded that the DE theory is more suitable to explain the conductive mechanism in perovskite manganites.

  11. Fabrication of 0-3 type manganite/insulator composites and manipulation of their magnetotransport properties

    NASA Astrophysics Data System (ADS)

    Yang, H.; Cao, Z. E.; Shen, X.; Xian, T.; Feng, W. J.; Jiang, J. L.; Feng, Y. C.; Wei, Z. Q.; Dai, J. F.

    2009-11-01

    In order to promote the technological applications of perovskite manganites, a great fundamental interest has been devoted to tailoring and/or enhancing their magnetotransport properties. Design and fabrication of manganite-based nanocomposites offer great potential to tailor the magnetotransport properties. In this work, we illustrate the promising concept of 0-3 type manganite/insulator composites (where manganite nanoparticles are uniformly and discretely embedded in a three-dimensional-connectivity insulator matrix) through the example of the La0.67Ca0.33MnO3 (LCMO)/MgO system. We present a promising strategy, which is based on the creation of core (LCMO)-shell (MgO) composite powders, for the synthesis of 0-3 type LCMO/MgO composites. A modified polyacrylamide gel method has been developed to prepare the core-shell structured LCMO/MgO composite powders. Besides its ability to create well-defined core-shell composite structures, the present gel method also allows the production of nanopowders with uniform particle size and in spherical shape. In our (1-x)LCMO/xMgO composite system, the lattice of LCMO is found to expand with rising MgO concentration x, yielding a bulk tensile strain. The increase in the tensile strain with x yields to a structural phase transition in the LCMO phase from an orthorhombic Pnma structure (x ≤0.2) to a rhombohedral R3¯c structure (x ≥0.3), and this structural transition leads to a relaxation of the strain. The strain effects induced by the MgO second phase exert a great influence on the ferromagnetic transition temperature TC. The composite system exhibits a percolative behavior in the conductivity, and the metal-insulator transition temperature TM-I decreases with x and is finally suppressed as the MgO content increases up to x =0.3. An enhancement in magnetoresistance (MR) is observed at low temperatures for the composites, and the low-field sensitivity of MR gets enhanced with the increase in MgO content. This work provides

  12. Electrical, thermal and magnetic studies on Bi-substituted LSMO manganites

    NASA Astrophysics Data System (ADS)

    Daivajna, Mamatha D.; Rao, Ashok; Okram, G. S.

    2015-08-01

    In the present investigation detailed electrical, magnetic and thermoelectric measurements on Bi-doped L0.6-xBixSr0.4MnO3 (0≤x≤0.3) manganites have been done. All the samples are single phased. The metal-insulator transition temperatures (TMI) as well as the Curie temperature (TC) are both found to decrease with Bi-content. Magneto-resistance (MR) data shows that MR (%) increases with Bi-content thereby showing it can be used in magnetic memory based devices. Resistivity data shows that small polaron hopping (SPH) model is valid in high temperature regime. Low temperature resistivity data depicts that electron-electron scattering is mainly responsible for the conduction mechanism. High temperature thermoelectric power (TEP) data reaffirms the validity of SPH model.

  13. Atomic manipulation with Scanning Tunneling Microscopy on the surface of a manganite thin film

    NASA Astrophysics Data System (ADS)

    Vasudevan, Rama; Tselev, Alexander; Baddorf, Arthur; Kalinin, Sergei

    2014-03-01

    Manganites have attracted significant attention in the past two decades, due to an extraordinarily rich spectrum of phenomena stemming from inherent complexity linking spin, charge, lattice and orbital degrees of freedom that result in properties including half-metallicity and giant magnetoresistance. Here, we report atomic manipulation with STM on the surfaces of 25 unit-cell thick La5/8Ca3/8MnO3 (LCMO) SrTiO3 (STO) substrates. We demonstrate that by applying triangular first-order reversal curve (FORC) waveforms of increasing amplitude to STM tips in-situ, it is possible from both A and B terminations to individually extract single units, form vacancies, remove units from layers below, rearrange atoms in the surrounding lattice, and therefore cause reactions to occur at the atomic level. These experiments point to the possibility of STM to manipulate atoms on the surfaces of manganites, opening up further avenues of research into fundamental physical properties defined at atomic scales. This research was sponsored by the Division of Materials Sciences and Engineering (RKV, AT, SVK) and by the Scientific User Facilities Division (APB) of BES, DOE. Research was conducted at the CNMS, which is sponsored at ORNL by the Scientific User Facilities Division, BES, DOE.

  14. Non-saturating magnetoresistance of La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60T

    NASA Astrophysics Data System (ADS)

    Niu, Wei; Gao, Ming; Wang, Xuefeng

    The mixed-valence manganite La0.7Sr0.3MnO3 (LSMO) is an interesting material for spintronics due to its intrinsic magnetoresistance properties. In this work, high quality LSMO films with atomic terraces are epitaxially grown on SrTiO3 (100) substrates by laser molecular beam epitaxy. The magnetoresistance of LSMO thin films has been measured in pulsed magnetic fields up to 60T over a wide temperature range. Unsaturated magnetoresistances and resistance relaxation of LSMO thin films have been found at different temperatures. Unlike polycrystalline manganites, a linear increase with fields of the magnetoconductance at low temperature which is attributed to the spin-dependent tunneling via grain boundaries. However, the unsaturation magnetoresistances of our LSMO thin films at different temperature show two kinds of trends: quadratic at low temperature; qusi-linear at high temperature. We attribute the unsaturation behavior to the scattering of domain walls. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.

  15. Giant magnetoimpedance and permeability change in La 2/3Sr 1/3MnO 3 manganite under low fields

    NASA Astrophysics Data System (ADS)

    Hu, Jifan; Qin, Hongwei; Wang, Yifei; Li, Bo

    2010-11-01

    We demonstrated that La 2/3Sr 1/3MnO 3 sintered manganite could exhibit a magnetoreactance Δ X/ X0 of -25.5% at 100 kHz, a giant magnetoimpedance Δ Z/ Z0 of -20% at 1-2 MHz and a giant AC magnetoresistance Δ R/ R0 of -39.3% at 5 MHz under a very low field of 300 Oe at room temperature, whereas the DC magnetoresistance Δ ρ/ ρ0 was -3.95% under H=10 kOe and only about -0.18% under H=300 Oe. Large field-induced change of real and imaginary circular permeabilities ( Δμ/ μ(0) and Δμ/ μ(0)) were obtained for La 2/3Sr 1/3MnO 3 sintered manganite. The giant magnetoreactance (giant magneto-inductive effect) at very low frequencies originates from the field induced change of transverse permeability. At 100 kHz under H=300 Oe, La 2/3Sr 1/3MnO 3 sintered manganite has Δμ/ μ(0)=-25.8% and Δμ/ μ(0)=-10.9%. The values of Δ R/ R0 and Δ Z/ Z0 are very small under 300 Oe at 100 kHz. The giant magnetoimpedance at high frequencies mainly originates from the large transverse permeability change induced by DC magnetic fields, via the penetration depth. Under H=300 Oe, La 2/3Sr 1/3MnO 3 sintered manganite presents values of Δμ/ μ(0)=-24.9%, Δμ/ μ(0)=-49.8% at 1 MHz, and Δμ/ μ(0)=-21.2%, Δμ/ μ(0)=-58.2% at 5 MHz.

  16. Magnetoresistance of Au films

    SciTech Connect

    Zhang, D. L. Song, X. H.; Zhang, X.; Zhang, X.-G.

    2014-12-14

    Classical magnetoresistance (MR) in nonmagnetic metals are conventionally understood in terms of the Kohler rule, with violation usually viewed as anomalous electron transport, in particular, as evidence of non-Fermi liquid behavior. Measurement of the MR of Au films as a function of temperature and film thickness reveals a strong dependence on grain size distribution and clear violation of the Kohler rule. Using a model of random resistor network, we show that this result can be explained if the MR arises entirely from inhomogeneity due to grain boundary scattering and thermal activation of grain boundary atoms. Consequently, the Kohler rule should not be used to distinguish normal and anomalous electron transport in solids.

  17. Tunnel magnetoresistance of diamondoids

    NASA Astrophysics Data System (ADS)

    Matsuura, Yukihito

    2016-10-01

    Tunnel magnetoresistance (TMR) of diamondoids has been predicted by first principles density functional theory. Diamantane was used as a basic molecular proxy for diamondoids because hydrogen atoms in the apical position are easily substituted for a thiol group. The pristine diamantane exhibited a low TMR ratio of 7%, and boron-substitution considerably decreased the TMR ratio. Conversely, nitrogen-substitution enhanced the TMR ratio by up to 20%. Heteroatom-substitution changes the tunneling probabilities by varying the molecular bond lengths. Furthermore, when the spins of the electrodes are parallel, the heteroatoms resulted in transmittance probabilities at an energy range near the Fermi level. Consequently, heteroatom-substitution can control the TMR ratios of diamondoids very well.

  18. Anomalous magnetoresistance in Fibonacci multilayers.

    SciTech Connect

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A.

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  19. Transversal magnetoresistance in Weyl semimetals

    NASA Astrophysics Data System (ADS)

    Klier, J.; Gornyi, I. V.; Mirlin, A. D.

    2015-11-01

    We explore theoretically the magnetoresistivity of three-dimensional Weyl and Dirac semimetals in transversal magnetic fields within two alternative models of disorder: (i) short-range impurities and (ii) charged (Coulomb) impurities. Impurity scattering is treated using the self-consistent Born approximation. We find that an unusual broadening of Landau levels leads to a variety of regimes of the resistivity scaling in the temperature-magnetic field plane. In particular, the magnetoresistance is nonmonotonous for the white-noise disorder model. For H →0 the magnetoresistance for short-range impurities vanishes in a nonanalytic way as H1 /3. In the limits of strongest magnetic fields H , the magnetoresistivity vanishes as 1 /H for pointlike impurities, while it is linear and positive in the model with Coulomb impurities.

  20. Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films

    NASA Astrophysics Data System (ADS)

    Fontcuberta, J.; Bibes, M.; Martínez, B.; Trtik, V.; Ferrater, C.; Sánchez, F.; Varela, M.

    1999-04-01

    We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined.

  1. Electronic Tuning of La(2/3)Sr(1/3)MnO(3) Thin Films via Heteroepitaxy

    DTIC Science & Technology

    2012-03-29

    substrate.VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699047] I. INTRODUCTION In the colossal magnetoresistive perovskite...important for explaining their colossal MR (CMR) in the vicinity of their magnetic transitions.15–18 Not all alloys of manganites have equally rich phase...Miller indices are used to reference crystallographic planes and directions. Magnetic measurements were performed in a Quantum Design SQUID magnetometer

  2. Giant electric field modulation of double exchange ferromagnetism at room temperature in the perovskite manganite/titanate p-n junction.

    PubMed

    Tanaka, Hidekazu; Zhang, Jun; Kawai, Tomoji

    2002-01-14

    We report on the electrical modulation of double exchange ferromagnetism at room temperature in hole-doped manganites of a metal oxide p-n junction. In this (La0.9Ba0.1)MnO(3)/Nb doped SrTiO3 p-n junction, the temperature dependence of the junction resistance shows a metal-insulator transition whose temperature, corresponding to that of ferromagnetic transition, is hugely modulated from 290 to 340 K by a bias voltage increasing from +1.0 to +1.8 V. The magnetoresistance can also be modulated electrically.

  3. Wireless power transfer based on dielectric resonators with colossal permittivity

    NASA Astrophysics Data System (ADS)

    Song, Mingzhao; Belov, Pavel; Kapitanova, Polina

    2016-11-01

    Magnetic resonant wireless power transfer system based on dielectric disk resonators made of colossal permittivity (ɛ = 1000) and low loss (tan δ = 2.5 × 10-4) microwave ceramic is experimentally investigated. The system operates at the magnetic dipole mode excited in the resonators providing maximal power transfer efficiency of 90% at the frequency 232 MHz. By applying an impedance matching technique, the efficiency of 50% is achieved within the separation between the resonators d = 16 cm (3.8 radii of the resonator). The separation, misalignment and rotation dependencies of wireless power transfer efficiency are experimentally studied.

  4. Positive magnetoresistance of La0.7Sr0.3MnO3/C composites

    NASA Astrophysics Data System (ADS)

    Kabirov, Yu. V.; Gavrilyachenko, V. G.; Bogatin, A. S.

    2016-07-01

    The perovskite manganite La0.7Sr0.3MnO3 compound is used as a component in ceramic (1-x)(La0.7Sr0.3MnO3)-xC composites at x = 0.15-0.85. It is found that every studied specimen is characterized by the linear dependence of the positive magnetoresistance (PMR) on the magnetic field strength at room temperature. The 0.6(La0.7Sr0.3MnO3)-0.4C composite has the largest magnetoresistance value (15%) at room temperature and intensity of magnetic field H=15kOe. A possible mechanism for the PMR of (1-x)(La0.7Sr0.3MnO3)-xC composites is discussed.

  5. Colossal anisotropy of the magnetic properties of doped lithium nitrodometalates

    SciTech Connect

    Antropov, Vladimir P; Antonov, Victor N

    2014-09-01

    We present a first-principles investigation of the electronic structure and physical properties of doped lithium nitridometalates Li2(Li1-xMx)N (LiMN) with M = Cr, Mn, Fe, Co, and Ni. The diverse properties include the equilibrium magnetic moments, magneto-crystalline anisotropy, magneto-optical Kerr spectra, and x-ray magnetic circular dichroism. We explain the colossal magnetic anisotropy in LiFeN by its unique electronic structure which ultimately leads to a series of unusual physical properties. The most unique property is a complete suppression of relativistic effects and freezing of orbital moments for in-plane orientation of the magnetization. This leads to the colossal spatial anisotropy of many magnetic properties including energy, Kerr, and dichroism effects. LiFeN is identified as an ultimate single-ion anisotropy system where a nearly insulating state can be produced by a spin orbital coupling alone. A very nontrivial strongly fluctuating and sign changing character of the magnetic anisotropy with electronic 3d-atomic doping is predicted theoretically. A large and highly anisotropic Kerr effect due to the interband transitions between atomic-like Fe 3d bands is found for LiFeN. A giant anisotropy of the x-ray magnetic circular dichroism for the Fe K spectrum and a very weak one for the Fe L2,3 spectra in LiFeN are also predicted.

  6. Tunable positive magnetoresistance effect of Co-doped amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Jiang, Y. C.; Wu, Z. P.; Bao, W.; Xu, S. J.; Gao, J.

    2012-04-01

    Co-doped amorphous carbon (a-C:Co) films were deposited on n-type Si substrates by pulsed-laser deposition method. A positive magnetoresistance (PMR) effect has been observed after Co doped into a-C films. Such a PMR is tuned by the bias voltage and reaches a peak at a particular voltage, as observed from the Current-voltage relations of the a-C:Co/Si junctions at various magnetic fields. MR-H characteristics were further studied at the temperatures of 65 K, which showed that under the reverse electric field the a-C:Co/Si junctions had a colossal PMR (over 100%). Raman spectra results demonstrate that Co doping favors the formation of graphitic sp2 sites. The mechanism of the PMR effect is attributed to the interactions between the applied magnetic field and Co ions, which leads to the transition from sp2 sites to sp3 sites and increase the resistance.

  7. Fully magnetic manganite spin filter tunnel junctions

    NASA Astrophysics Data System (ADS)

    Prasad, Bhagwati; Blamire, Mark G.

    2016-09-01

    In this paper we demonstrate spintronic devices which combine magnetic tunnel junctions with a spin-filtering tunnel barrier. These consist of an ultrathin ferromagnetic insulating barrier, Sm0.75Sr0.25MnO3, sandwiched between two ferromagnetic half-metallic manganite electrodes, La0.7Sr0.3MnO3 and La0.7Ca0.3MnO3, in a nanopillar structure. Depending on the relative magnetic configurations of barrier and electrode layers, three resistance states are well defined, which therefore represent a potential three-state memory concept. These results open the way for the development of spintronic devices by exploiting the many degrees of freedom of perovskite manganite heterostructure systems.

  8. Tunneling magnetoresistance in Si nanowires

    NASA Astrophysics Data System (ADS)

    Montes, E.; Rungger, I.; Sanvito, S.; Schwingenschlögl, U.

    2016-11-01

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green’s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  9. Origin of nonsaturating linear magnetoresistivity

    NASA Astrophysics Data System (ADS)

    Kisslinger, Ferdinand; Ott, Christian; Weber, Heiko B.

    2017-01-01

    The observation of nonsaturating classical linear magnetoresistivity has been an enigmatic phenomenon in solid-state physics. We present a study of a two-dimensional ohmic conductor, including local Hall effect and a self-consistent consideration of the environment. An equivalent-circuit scheme delivers a simple and convincing argument why the magnetoresistivity is linear in strong magnetic field, provided that current and biasing electric field are misaligned by a nonlocal mechanism. A finite-element model of a two-dimensional conductor is suited to display the situations that create such deviating currents. Besides edge effects next to electrodes, charge carrier density fluctuations are efficiently generating this effect. However, mobility fluctuations that have frequently been related to linear magnetoresistivity are barely relevant. Despite its rare observation, linear magnetoresitivity is rather the rule than the exception in a regime of low charge carrier densities, misaligned current pathways and strong magnetic field.

  10. Intrinsic interfacial phenomena in manganite heterostructures.

    PubMed

    Vaz, C A F; Walker, F J; Ahn, C H; Ismail-Beigi, S

    2015-04-01

    We review recent advances in our understanding of interfacial phenomena that emerge when dissimilar materials are brought together at atomically sharp and coherent interfaces. In particular, we focus on phenomena that are intrinsic to the interface and review recent work carried out on perovskite manganites interfaces, a class of complex oxides whose rich electronic properties have proven to be a useful playground for the discovery and prediction of novel phenomena.

  11. Thermal conductivity analysis of lanthanum doped manganites

    SciTech Connect

    Mansuri, Irfan; Shaikh, M. W.; Khan, E.; Varshney, Dinesh

    2014-04-24

    The temperature-dependent thermal conductivity of the doped manganites La{sub 0.7}Ca{sub 0.3}MnO{sub 3} is theoretically analyzed within the framework of Kubo formulae. The Hamiltonian consists of phonon, electron and magnon thermal conductivity contribution term. In this process we took defects, carrier, grain boundary, scattering process term and then calculate phonon, electron and magnon thermal conductivity.

  12. Bipolaron mechanism for organic magnetoresistance.

    PubMed

    Bobbert, P A; Nguyen, T D; van Oost, F W A; Koopmans, B; Wohlgenannt, M

    2007-11-23

    We present a mechanism for the recently discovered magnetoresistance in disordered pi-conjugated materials, based on hopping of polarons and bipolaron formation, in the presence of the random hyperfine fields of the hydrogen nuclei and an external magnetic field. Within a simple model we describe the magnetic field dependence of the bipolaron density. Monte Carlo simulations including on-site and longer-range Coulomb repulsion show how this leads to positive and negative magnetoresistance. Depending on the branching ratio between bipolaron formation or dissociation and hopping rates, two different line shapes in excellent agreement with experiment are obtained.

  13. Bipolaron Mechanism for Organic Magnetoresistance

    NASA Astrophysics Data System (ADS)

    Bobbert, P. A.; Nguyen, T. D.; van Oost, F. W. A.; Koopmans, B.; Wohlgenannt, M.

    2007-11-01

    We present a mechanism for the recently discovered magnetoresistance in disordered π-conjugated materials, based on hopping of polarons and bipolaron formation, in the presence of the random hyperfine fields of the hydrogen nuclei and an external magnetic field. Within a simple model we describe the magnetic field dependence of the bipolaron density. Monte Carlo simulations including on-site and longer-range Coulomb repulsion show how this leads to positive and negative magnetoresistance. Depending on the branching ratio between bipolaron formation or dissociation and hopping rates, two different line shapes in excellent agreement with experiment are obtained.

  14. Magnetoresistance of multiwall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lu, Li; Kang, N.; Kong, W. J.; Hu, J. S.; Pan, Z. W.; Xie, S. S.

    2002-03-01

    We have investigated the magnetoresistance of multiwall carbon nanotubes bundles. At temperatures above 15 K, the magnetoresistance was found to follow exactly a scaling law as predicted by the theory of two-dimensional (2D) weak localization. Below 15 K, the 2D weak localization behavior is modified due to the formation of a Coulomb gap. This modification does not fit to those theories which treat electron-electron interaction as a perturbation. Altshular-Aronov-Spivak (AAS) resistance oscillation was observed in milli-Kelvin temperature range. The results will be discussed in terms of the interplay between electron-electron interaction and disorder scattering in multiwall carbon nanotube.

  15. Colossal Tooling Design: 3D Simulation for Ergonomic Analysis

    NASA Technical Reports Server (NTRS)

    Hunter, Steve L.; Dischinger, Charles; Thomas, Robert E.; Babai, Majid

    2003-01-01

    The application of high-level 3D simulation software to the design phase of colossal mandrel tooling for composite aerospace fuel tanks was accomplished to discover and resolve safety and human engineering problems. The analyses were conducted to determine safety, ergonomic and human engineering aspects of the disassembly process of the fuel tank composite shell mandrel. Three-dimensional graphics high-level software, incorporating various ergonomic analysis algorithms, was utilized to determine if the process was within safety and health boundaries for the workers carrying out these tasks. In addition, the graphical software was extremely helpful in the identification of material handling equipment and devices for the mandrel tooling assembly/disassembly process.

  16. A colossal impact enriched Mars' mantle with noble metals

    NASA Astrophysics Data System (ADS)

    Brasser, R.; Mojzsis, S. J.

    2017-06-01

    Once the terrestrial planets had mostly completed their assembly, bombardment continued by planetesimals left over from accretion. Highly siderophile element (HSE) abundances in Mars' mantle imply that its late accretion supplement was 0.8 wt %; Earth and the Moon obtained an additional 0.7 wt % and 0.02 wt %, respectively. The disproportionately high Earth/Moon accretion ratio is explicable by stochastic addition of a few remaining Ceres-sized bodies that preferentially targeted Earth. Here we show that Mars' late accretion budget also requires a colossal impact, a plausible visible remnant of which is the emispheric dichotomy. The addition of sufficient HSEs to the Martian mantle entails an impactor of at least 1200 km in diameter to have struck Mars before 4430 Ma, by which time crust formation was well underway. Thus, the dichotomy could be one of the oldest geophysical features of the Martian crust. Ejected debris could be the source material for its satellites.

  17. Anisotropic magnetoresistance in thin films of the Mott metal CaVO3

    NASA Astrophysics Data System (ADS)

    Lu, Jiwei; Gu, Man

    2012-02-01

    Bulk CaVO3 (CVO) is a Pauli paramagnetic metal with a singe 3d electron. Some unusual drastic changes in the magneto-resistance, magnetic susceptibility and the Hall effect have been reported in single crystal CVO. We have simultaneously synthesized epitaxial CVO films grown on three differently oriented SrTiO3 substrates. Colossal magneto-resistance (MR) as well as large crystalline anisotropic was observed at low temperatures. The maximum MR, defined as (R(7 T)-R(0 T))/R(0 T)*100 %, was over 1,0000 % at 2 K and 35 Tesla (parallel magnetic field) on the CVO films deposited on a (110) SrTiO3 single crystal substrate, and didn't show any sign of saturation. When the magnetic field was perpendicular, MR was dropped to 6,000%. The MR ratio was much larger than that of single crystal CVO. We have also investigated the magneto-transport behaviors of CVO films deposited on (111) and (100) STO and will discussed the dependence of MR in CVO on the crystal orientation as well as the orientation of external magnetic field.

  18. Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films.

    PubMed

    Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-Ki; Park, Bae Ho; Yoon, Sungwon; Suh, B J; Kim, Changyoung; Seo, S S A; Lee, Suyoun

    2016-10-05

    Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices.

  19. Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-Ki; Park, Bae Ho; Yoon, Sungwon; Suh, B. J.; Kim, Changyoung; Seo, S. S. A.; Lee, Suyoun

    2016-10-01

    Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices.

  20. Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films

    PubMed Central

    Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-ki; Park, Bae Ho; Yoon, Sungwon; Suh, B. J.; Kim, Changyoung; Seo, S. S. A.; Lee, Suyoun

    2016-01-01

    Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices. PMID:27703222

  1. Structural studies on the substitution of Ag, Na doped LCSMO CMR manganites

    NASA Astrophysics Data System (ADS)

    Subhashini, P.; Munirathinam, B.; Krishnaiah, M.; Venkatesh, R.; Venkateswarlu, D.; Ganesan, V.

    2016-05-01

    Synthesis and characterization of colossal magnetoresistance (CMR) materials has been a subject of scientific research due to the unique transport, magnetotransport, and magnetic properties. The single phase polycrystalline La0.7Ca0.1Sr0.1M0.1MnO3 (LCSMO) (M=Ag and Na) samples prepared using nitrate route method. The structural properties are studied at different dopants by X-ray diffraction. The surface morphology and elemental analysis of both samples were carried out by scanning electron microscopy (SEM) and energy dispersive X-ray technique (EDAX) respectively. The structural analysis shows that the LCSMO is crystallized in an orthorhombic perovskite structure belonging to Pnma space group. The crystal size of the sample is calculated using Scherrer formula. The SEM images show that the polycrystalline grains are observed to be near spherical shape and uniform in size. EDAX spectra taken from the surface of the synthesized powders show a nominal composition near the desired one for M=Na sample where as some vacancies are present in the A-site in the case of Ag substitution as will be discussed in this paper.

  2. Giant enhancement of magnetocrystalline anisotropy in ultrathin manganite films via nanoscale 1D periodic depth modulation

    NASA Astrophysics Data System (ADS)

    Rajapitamahuni, Anil; Zhang, Le; Singh, Vijay; Burton, John; Koten, Mak; Shield, Jeffrey; Tsymbal, Evgeny; Hong, Xia

    We report a unusual giant enhancement of in-plane magnetocrystalline anisotropy (MCA) in ultrathin colossal magnetoresistive oxide films due to 1D nanoscale periodic depth modulation. High quality epitaxial thin films of La0.67Sr0.33MnO3 (LSMO) of thickness 6 nm were grown on (001) SrTiO3 substrates via off-axis radio frequency magnetron sputtering. The top 2 nm of LSMO films are patterned into periodic nano-stripes using e-beam lithography and reactive ion etching. The resulting structure consists of nano-stripes of 2 nm height and 100-200 nm width on top of a 4 nm thick continuous base layer. We employed planar Hall effect measurements to study the in-plane magnetic anisotropy of the unpatterned and nanopatterned films. The unpatterned films show a biaxial anisotropy with easy axis along [110]. The extracted anisotropy energy density is ~1.1 x 105 erg/cm3, comparable to previously reported values. In the nanopatterned films, a strong uniaxial anisotropy is developed along one of the biaxial easy axes. The corresponding anisotropy energy density is ~5.6 x 106 erg/cm3 within the nano-striped volume, comparable to that of Co. We attribute the observed uniaxial MCA to MnO6 octahedral rotations/tilts and the enhancement in the anisotropy energy density to the strain gradient within the nano-stripes.

  3. Structural studies on the substitution of Ag, Na doped LCSMO CMR manganites

    SciTech Connect

    Subhashini, P. Krishnaiah, M.; Munirathinam, B.

    2016-05-06

    Synthesis and characterization of colossal magnetoresistance (CMR) materials has been a subject of scientific research due to the unique transport, magnetotransport, and magnetic properties. The single phase polycrystalline La{sub 0.7}Ca{sub 0.1}Sr{sub 0.1}M{sub 0.1}MnO{sub 3} (LCSMO) (M=Ag and Na) samples prepared using nitrate route method. The structural properties are studied at different dopants by X-ray diffraction. The surface morphology and elemental analysis of both samples were carried out by scanning electron microscopy (SEM) and energy dispersive X-ray technique (EDAX) respectively. The structural analysis shows that the LCSMO is crystallized in an orthorhombic perovskite structure belonging to Pnma space group. The crystal size of the sample is calculated using Scherrer formula. The SEM images show that the polycrystalline grains are observed to be near spherical shape and uniform in size. EDAX spectra taken from the surface of the synthesized powders show a nominal composition near the desired one for M=Na sample where as some vacancies are present in the A-site in the case of Ag substitution as will be discussed in this paper.

  4. Giant tunneling magnetoresistance in silicene

    SciTech Connect

    Wang, Yu; Lou, Yiyi

    2013-11-14

    We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-induced wave-vector filtering effect, remarkable difference in configuration-dependent transport gives rise to a giant tunneling magnetoresistance. In combination with the peculiar buckled structure of silicene and its electric tunable energy gap, the receiving magnetoresistance can be efficiently modulated by the externally-tunable stray field, electrostatic potential, and staggered sublattice potential, providing some flexible strategies to construct silicene-based nanoelectronic device.

  5. Magnetoresistance behavior of UNiGe

    SciTech Connect

    Nakotte, H.; Lacerda, A.; Purwanto, A.; Havela, L.; Sechovsky, V.; Prokes, K.; Brueck, E.; Boer, F.R. de; Torikachvili, M.S.

    1995-05-01

    The authors have measured the temperature dependences of the magnetoresistance of single-crystalline UNiGe for both parallel (i//B//c-axis) and perpendicular configurations (i//a-axis, B//c-axis) in magnetic fields up to 18 T. Both configurations yield similar magnetoresistance behavior, which emphasizes the strong magnetic contribution to the resistivity in all directions. Crossing magnetic-phase boundaries causes anomalies in the magnetoresistance, which allowed a completion of the previously proposed magnetic phase diagram.

  6. Sign reversal of junction magnetoresistance in p-La0.7Ca0.3MnO3/SiO2/n-Si heterostructure: a possibility in spintronics application.

    PubMed

    Giri, S K; Nath, T K

    2012-10-01

    We have fabricated a p-La0.7Ca0.3MnO3/SiO2/n-Si heterostructure, consisting of a p-type manganite (La0.7Ca0.3MnO3) and n-type Si with a interfacial layer of SiO2 with typical thickness of about 9 nm using pulsed laser deposition technique. The junction exhibits rectifying behavior over the temperature range of 10-300 K with rectification factor 52 at room temperature. Investigation on the electrical properties of p-La0.7Ca0.3MnO3/SiO2/n-Si heterostructure exhibits nonlinear J-V characteristics in a wide temperature range. A crossover from negative to positive junction magnetoresistance (JMR) is observed in p-La0.7Ca0.3MnO3/SiO2/n-Si heterostructure in current perpendicular to film plane (CPP) geometry. The temperature dependent sign of junction magnetoresistance of the heterojunction has been investigated carefully in details. It is found that the junction exhibits the positive junction magnetoresistance when the temperature is greater than the ferromagnetic to paramagnetic transition temperature (Tc) of the top highly spin-polarized half-metallic ferromagnetic La0.7Ca0.3MnO3 manganite film layer. The relation between junction magnetoresistance and external magnetic field is found to be of (delta rho/rho approximately equal alphaHbeta) type having both alpha and beta temperature dependent. We attribute the emergence of negative JMR at lower temperature (< Tc) and positive JMR at higher temperature (> Tc) to the quantum mechanical tunneling transport mechanism across the heterojunction. Our results might be very useful to fabricate artificial devices using the manganite-based heterojunction grown on single crystalline n-Si (100) in spintronics device applications.

  7. Extraordinary magnetoresistance: sensing the future

    NASA Astrophysics Data System (ADS)

    Hewett, Thomas; Kusmartsev, Feodor

    2012-06-01

    Simulations utilising the finite element method (FEM) have been produced in order to investigate aspects of circular extraordinary magnetoresistance (EMR) devices. The effect of three specific features on the resultant magnetoresistance were investigated: the ratio of the metallic to semiconducting conductivities (σ M/σ S); the semiconductor mobility; and the introduction of an intermediate region at the semiconductormetal interface in order to simulate a contact resistance. In order to obtain a large EMR effect the conductivity ratio (σ M/σ S) is required to be larger than two orders of magnitude; below this critical value the resultant magnetoresistance effect is dramatically reduced. Large mobility semiconductors exhibit larger EMR values for a given field (below saturation) and reduce the magnetic field required to produce saturation of the magnetoresistance. This is due to a larger Hall angle produced at a given magnetic field and is consistent with the mechanism of the EMR effect. Since practical magnetic field sensors are required to operate at low magnetic fields, high mobility semiconductors are required in the production of more sensitive EMR sensors. The formation of a Schottky barrier at the semiconductor-metal interface has been modelled with the introduction of a contact resistance at the semiconductor-metal interface. Increasing values of contact resistance are found to reduce the EMR effect with it disappearing altogether for large values. This has been shown explicitly by looking at the current flow in the system and is consistent with the mechanism of the EMR effect. The interface resistance was used to fit the simulated model to existing experimental data. The best fit occurred with an interface with resistivity of 1.55×10-4 m (overestimate). The EMR effect holds great potential with regard to its future application to magnetic field sensors. The design of any such devices should incorporate high mobility materials (such as graphene) along

  8. Extraordinary magnetoresistance: sensing the future

    NASA Astrophysics Data System (ADS)

    Hewett, Thomas H.; Kusmartsev, Feodor V.

    2012-06-01

    Simulations utilising the finite element method (FEM) have been produced in order to investigate aspects of circular extraordinary magnetoresistance (EMR) devices. The effect of three specific features on the resultant magnetoresistance were investigated: the ratio of the metallic to semiconducting conductivities ( σ M / σ S ); the semiconductor mobility; and the introduction of an intermediate region at the semiconductormetal interface in order to simulate a contact resistance. In order to obtain a large EMR effect the conductivity ratio ( σ M / σ S ) is required to be larger than two orders of magnitude; below this critical value the resultant magnetoresistance effect is dramatically reduced. Large mobility semiconductors exhibit larger EMR values for a given field (below saturation) and reduce the magnetic field required to produce saturation of the magnetoresistance. This is due to a larger Hall angle produced at a given magnetic field and is consistent with the mechanism of the EMR effect. Since practical magnetic field sensors are required to operate at low magnetic fields, high mobility semiconductors are required in the production of more sensitive EMR sensors. The formation of a Schottky barrier at the semiconductor-metal interface has been modelled with the introduction of a contact resistance at the semiconductor-metal interface. Increasing values of contact resistance are found to reduce the EMR effect with it disappearing altogether for large values. This has been shown explicitly by looking at the current flow in the system and is consistent with the mechanism of the EMR effect. The interface resistance was used to fit the simulated model to existing experimental data. The best fit occurred with an interface with resistivity of 1.55×10-4 m (overestimate). The EMR effect holds great potential with regard to its future application to magnetic field sensors. The design of any such devices should incorporate high mobility materials (such as graphene

  9. Giant magnetoresistance in silicene nanoribbons.

    PubMed

    Xu, Chengyong; Luo, Guangfu; Liu, Qihang; Zheng, Jiaxin; Zhang, Zhimeng; Nagase, Shigeru; Gao, Zhengxiang; Lu, Jing

    2012-05-21

    By performing first-principle quantum transport calculations, we predict a giant magnetoresistance in zigzag silicene nanoribbons (ZSiNRs) connecting two semi-infinite silicene electrodes through switch of the edge spin direction of ZSiNRs. Spin-filter efficiency of both the antiferromagnetic and ferromagnetic ZSiNRs is sign-changeable with the bias voltage. Therefore, potential application of silicene in spintronics devices is suggested.

  10. Magnetoresistive sensors for string instruments

    NASA Astrophysics Data System (ADS)

    Lenssen, K.-M. H.; Somers, G. H. J.; van Zon, J. B. A. D.

    2002-05-01

    Pickup elements for string instruments, in particular for electric guitars, represent a new application area for magnetoresistive sensors. Recently we developed a sensor configuration with permanent magnets for this purpose. For the first experiments we used commercial anisotropic magnetoresistance sensors (Philips KMZ10) mounted on small ferrite bias magnets. Recently we equipped an electric guitar with prototypes comprising giant magnetoresistance (GMR) sensors. These prototype MR pickup elements showed several clear advantages compared to the presently commonly used inductive pickup units. They are much less sensitive to disturbing electromagnetic fields (>1000×at 5 kHz), mainly because their active sensor area is several orders of magnitude smaller (a few mm2 instead of cm2). Also the larger freedom in the choice of the permanent magnets (due to the larger sensitivity of the GMR elements) is advantageous: employing smaller magnets reduces the damping and thus significantly improves the sustain, the magnets can be less expensive and more stable magnet materials can be chosen so that aging effects are eliminated.

  11. Frequency dependence of organic magnetoresistance

    NASA Astrophysics Data System (ADS)

    Wang, Fujian; Rybicki, James; Lin, Ran; Hutchinson, Kent; Hou, Jia; Wohlgenannt, Markus

    2011-03-01

    Organic magnetoresistive (OMAR) devices show a large enough magnetoresistive response (typically 10%) for potential applications as magnetic field sensors. However, applications often require sensing high frequency magnetic fields, and the examination of the frequency-dependent magnetoresistive response is therefore required. Analysis of time constants that limit the frequency response may also shed light on the mechanism behind the OMAR effect, because different OMAR mechanisms occur at different time scales In our experiments, the AC magnetic field is supplied by a coil with a ferrite core which is driven by a function generator The AC magnet shows a frequency response that is almost flat up to 1MHz. We found that the OMAR frequency limit is about 10 kHz for a typical organic semiconductor device and at least 100 kHz for devices made from a doped polymer film. We also performed capacitance and conductance vs. frequency measurements to understand the origin of the observed limit frequencies. This work was supported by Army MURI under GrantNo. W911NF-08-1-0317 and NSF under Grant No. ECS 0725280.

  12. Gate control of percolative conduction in strongly correlated manganite films.

    PubMed

    Hatano, Takafumi; Sheng, Zhigao; Nakamura, Masao; Nakano, Masaki; Kawasaki, Masashi; Iwasa, Yoshihiro; Tokura, Yoshinori

    2014-05-01

    Gate control of percolative conduction in a phase-separated manganite system is demonstrated in a field-effect transistor geometry, resulting in ambipolar switching from a metallic state to an insulating state.

  13. Colossal magnetocaloric effect in magneto-auxetic systems

    NASA Astrophysics Data System (ADS)

    Dudek, M. R.; Wojciechowski, K. W.; Grima, J. N.; Caruana-Gauci, R.; Dudek, K. K.

    2015-08-01

    We show that a mechanically driven magnetocaloric effect (MCE) in magneto-auxetic systems (MASs) in the vicinity of room temperature is possible and the effect can be colossal. Even at zero external magnetic field, the magnetic entropy change in this reversible process can be a few times larger in magnitude than in the case of the giant MCE discovered by Pecharsky and Gschneidner in Gd5(Si2Ge2). MAS represent a novel class of metamaterials having magnetic insertions embedded within a non-magnetic matrix which exhibits a negative Poisson’s ratio. The auxetic behaviour of the non-magnetic matrix may either enhance the magnetic ordering process or it may result in a transition to the disordered phase. In the MAS under consideration, a spin 1/2 system is chosen for the magnetic component and the well-known Onsager solution for the two-dimensional square lattice Ising model at zero external magnetic field is used to show that the isothermal change in magnetic entropy accompanying the auxetic behaviour can take a large value at room temperature. The practical importance of our findings is that MCE materials used in present engineering applications may be further enhanced by changing their geometry such that they exhibit auxetic behaviour.

  14. Defect driven tailoring of colossal dielectricity of Reduced Graphene Oxide

    SciTech Connect

    Sarkar, S.; Mondal, A.; Dey, K.; Ray, R.

    2016-02-15

    Highlights: • Reduced graphene oxides (RGO) are prepared by two chemical routes. • Defects in RGO are characterized by Raman, FTIR and XPS studies. • Defects tailor colossal dielectricity in RGO. - Abstract: Reduced graphene oxide (RGO) is prepared in two different chemical routes where reduction of graphene oxide is performed by hydrazine hydrate and through high pressure in hydrothermal reactor. Samples are characterized by X-ray powdered diffraction (XRD), thermo gravimetric analysis (TGA), field emission scanning electron microscopy (FESEM) and tunneling electron microscopy (TEM). Types of defects are probed by Raman, FTIR spectroscopy and X-ray photoelectron spectroscopy (XPS). UV–vis absorption reveals different optical band gaps of the two RGOs. Conductivity mechanism is studied through I–V measurements displaying different characteristic features which are addressed due to the presence of defects appeared in different synthesis. Significantly high value (∼10{sup 4}) of dielectric permittivity at 10 MHz is attractive for technological application which could be tuned by the defects present in RGO.

  15. Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus.

    PubMed

    Wu, Jing; Koon, Gavin Kok Wai; Xiang, Du; Han, Cheng; Toh, Chee Tat; Kulkarni, Eeshan S; Verzhbitskiy, Ivan; Carvalho, Alexandra; Rodin, Aleksandr S; Koenig, Steven P; Eda, Goki; Chen, Wei; Neto, A H Castro; Özyilmaz, Barbaros

    2015-08-25

    Black phosphorus has an orthorhombic layered structure with a layer-dependent direct band gap from monolayer to bulk, making this material an emerging material for photodetection. Inspired by this and the recent excitement over this material, we studied the optoelectronics characteristics of high-quality, few-layer black phosphorus-based photodetectors over a wide spectrum ranging from near-ultraviolet (UV) to near-infrared (NIR). It is demonstrated for the first time that black phosphorus can be configured as an excellent UV photodetector with a specific detectivity ∼3 × 10(13) Jones. More critically, we found that the UV photoresponsivity can be significantly enhanced to ∼9 × 10(4) A W(-1) by applying a source-drain bias (VSD) of 3 V, which is the highest ever measured in any 2D material and 10(7) times higher than the previously reported value for black phosphorus. We attribute such a colossal UV photoresponsivity to the resonant-interband transition between two specially nested valence and conduction bands. These nested bands provide an unusually high density of states for highly efficient UV absorption due to the singularity of their nature.

  16. Spin transport in epitaxial magnetic manganite/ruthenate heterostructures with an LaMnO{sub 3} layer

    SciTech Connect

    Petrzhik, A. M. Ovsyannikov, G. A.; Shadrin, A. V.; Khaidukov, Yu. N.; Mustafa, L.

    2014-12-15

    Epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/LaMnO{sub 3}/SrRuO{sub 3} (LSMO/LMO/SRO) heterostructures with an LMO layer 0–35 nm thick are grown by laser ablation on an NdGaO{sub 3} substrate at a high temperature. X-ray diffraction and transmission electron microscopy demonstrate sharp interfaces and epitaxial growth of the LSMO and SRO layers in the heterostructures at an LMO layer thickness of 0–35 nm. SQUID measurements of the magnetic moment of the heterostructures with an LMO layer and the data obtained with reflectometry of polarized neutrons show that the manganite LMO layer is a ferromagnet at a temperature below 150 K and strongly affects the magnetic moment of the heterostructures at low temperatures. The magnetoresistance of the mesostructure created from the heterostructure using lithography and ion etching decreases with increasing LMO layer thickness and weakly depends on the direction of an applied magnetic field. If the LMP layer is absent, a negative magnetoresistance is detected; it is likely to be caused by a negative magnetization of the SRO layer.

  17. Multiple crossovers between positive and negative magnetoresistance versus field due to fragile spin structure in metallic GdPd3

    NASA Astrophysics Data System (ADS)

    Pandey, Abhishek; Mazumdar, Chandan; Ranganathan, R.; Johnston, D. C.

    2017-02-01

    Studies on the phenomenon of magnetoresistance (MR) have produced intriguing and application-oriented outcomes for decades–colossal MR, giant MR and recently discovered extremely large MR of millions of percents in semimetals can be taken as examples. We report here the discovery of novel multiple sign changes versus applied magnetic field of the MR in the cubic intermetallic compound GdPd3. Our study shows that a very strong correlation between magnetic, electrical and magnetotransport properties is present in this compound. The magnetic structure in GdPd3 is highly fragile since applied magnetic fields of moderate strength significantly alter the spin arrangement within the system–a behavior that manifests itself in the oscillating MR. Intriguing magnetotransport characteristics of GdPd3 are appealing for field-sensitive device applications, especially if the MR oscillation could materialize at higher temperature by manipulating the magnetic interaction through perturbations caused by chemical substitutions.

  18. Multiple crossovers between positive and negative magnetoresistance versus field due to fragile spin structure in metallic GdPd3

    PubMed Central

    Pandey, Abhishek; Mazumdar, Chandan; Ranganathan, R.; Johnston, D. C.

    2017-01-01

    Studies on the phenomenon of magnetoresistance (MR) have produced intriguing and application-oriented outcomes for decades–colossal MR, giant MR and recently discovered extremely large MR of millions of percents in semimetals can be taken as examples. We report here the discovery of novel multiple sign changes versus applied magnetic field of the MR in the cubic intermetallic compound GdPd3. Our study shows that a very strong correlation between magnetic, electrical and magnetotransport properties is present in this compound. The magnetic structure in GdPd3 is highly fragile since applied magnetic fields of moderate strength significantly alter the spin arrangement within the system–a behavior that manifests itself in the oscillating MR. Intriguing magnetotransport characteristics of GdPd3 are appealing for field-sensitive device applications, especially if the MR oscillation could materialize at higher temperature by manipulating the magnetic interaction through perturbations caused by chemical substitutions. PMID:28211520

  19. High-temperature magnetic anomalies in Sr-doped La manganite structures

    SciTech Connect

    Potter, C.D.; Swiatek, M.; Mitchell, J.F.; Hinks, D.G.; Jorgensen, J.D.; Bader, S.D.; Argyriou, D.N.

    1996-12-31

    The temperature dependence of the magnetization M, susceptibility {chi}, and magnetoresistance MR for 3 perovskite-variant manganite structures were studied: monoclinic (x=0.075) and orthorhombic (x=0. 125) La{sub 1-x}Sr{sub x}MnO{sub 3}, and tetragonal layered La{sub 2- 2x}Sr{sub 1+2x}Mn{sub 2}O{sub 7} (x=0.4) with x also indicating the nominal fraction of Mn{sup 4+}. In each case, evidence is found for unusual magnetic states at temperatures T above their primary magnetic transitions. In the first case, the high-T {chi} deviates from Curie-Weiss expectations, in the second case the MR extends to high T, and in the last, M and {chi} exhibit short-range anomalies at high T. This suggests that a key feature of these systems is the existence of multiple magnetic energy scales, independent of structure, dimensionality, or doping levels.

  20. Quantum criticality and DBI magneto-resistance

    NASA Astrophysics Data System (ADS)

    Kiritsis, Elias; Li, Li

    2017-03-01

    We use the DBI action from string theory and holography to study the magneto-resistance at quantum criticality with hyperscaling violation. We find and analyze a rich class of scaling behaviors for the magneto-resistance. A special case describes the scaling results found in pnictides by Hayers et al in 2014 (arXiv:1412.6484).

  1. Magnetoresistance in relativistic hydrodynamics without anomalies

    NASA Astrophysics Data System (ADS)

    Baumgartner, Andrew; Karch, Andreas; Lucas, Andrew

    2017-06-01

    We present expressions for the magnetoconductivity and the magnetoresistance of a strongly interacting metal in 3 + 1 dimensions, derivable from relativistic hydrodynamics. Such an approach is suitable for ultraclean metals with emergent Lorentz invariance. When this relativistic fluid contains chiral anomalies, it is known to exhibit longitudinal negative magnetoresistance. We show that similar effects can arise in non-anomalous relativistic fluids due to the distinctive gradient expansion. In contrast with a Galilean-invariant fluid, the resistivity tensor of a dirty relativistic fluid exhibits similar angular dependence to negative magnetoresistance, even when the constitutive relations and momentum relaxation rate are isotropic. We further account for the effect of magnetic field-dependent corrections to the gradient expansion and the effects of long-wavelength impurities on magnetoresistance. We note that the holographic D3/D7 system exhibits negative magnetoresistance.

  2. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

    NASA Astrophysics Data System (ADS)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi /Ag /CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  3. Charge transfer in iridate-manganite superlattices

    DOE PAGES

    Okamoto, Satoshi; Nichols, John; Sohn, Changhee; ...

    2017-03-03

    Charge transfer in superlattices consisting of SrIrOmore » $$_3$$ and SrMnO$$_3$$ is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO$$_3$$ and SrMnO$$_3$$, rather large charge transfer was experimentally reported between them. Our results provide a qualitative understanding to such experimental reports. We further develop a microscopic model that captures the mechanism behind this phenomenon. This leads to unique strain dependence of such charge transfer in iridate-manganite superlattices. The predicted behavior is consistently verified by experiment. Lastly, our work thus demonstrates a new route to control electronic states in non-polar oxide heterostructures.« less

  4. Charge Transfer in Iridate-Manganite Superlattices.

    PubMed

    Okamoto, Satoshi; Nichols, John; Sohn, Changhee; Kim, So Yeun; Noh, Tae Won; Lee, Ho Nyung

    2017-03-07

    Charge transfer in superlattices consisting of SrIrO3 and SrMnO3 is investigated using density functional theory. Despite the nearly identical work function and nonpolar interfaces between SrIrO3 and SrMnO3, rather large charge transfer was experimentally reported at the interface between them. Here, we report a microscopic model that captures the mechanism behind this phenomenon, providing a qualitative understanding of the experimental observation. This leads to unique strain dependence of such charge transfer in iridate-manganite superlattices. The predicted behavior is consistently verified by experiment with soft X-ray and optical spectroscopy. Our work thus demonstrates a new route to control electronic states in nonpolar oxide heterostructures.

  5. Phase Stability of the Lanthanum Strontium Manganites

    NASA Astrophysics Data System (ADS)

    Zheng, Feng; Pederson, Larry

    1996-03-01

    Phase diagram and thermodynamic data of the La-Sr-Mn-O system has been studied. The ABO3 -type perovskite of this system is presently the preferred cathode material for application in solid oxide fuel cells. And the phase stability of the lanthanum strontium manganites at elevated temperature is vital to fuel cell operation. Measuring the electromotive force through solid galvanic cell (-) Air,Pt|SrF_2,SrO||CaF_2||La_1-xSr_xMnO_3,SrF_2|Pt,Air (+) and the like enable us to derive the strontium oxide activity and other thermodynamic parameters such as Gibbs free energy of reaction, etc, which help us to understand the materials in using.

  6. Frequency dependence of organic magnetoresistance

    NASA Astrophysics Data System (ADS)

    Wagemans, W.; Janssen, P.; van der Heijden, E. H. M.; Kemerink, M.; Koopmans, B.

    2010-09-01

    To identify the microscopic mechanisms of organic magnetoresistance (OMAR), the dependency on the frequency of the applied magnetic field is explored, which consists of a dc and ac component. The measured magnetoconductance decreases when the frequency is increased. The decrease is stronger for lower voltages, which is shown to be linked to the presence of a negative capacitance, as measured with admittance spectroscopy. The negative capacitance disappears when the frequency becomes comparable to the inverse transit time of the minority carriers. These results are in agreement with recent interpretations that magnetic field effects on minority carrier mobility dominate OMAR.

  7. Colossal injection of catalyst atoms into silicon nanowires.

    PubMed

    Moutanabbir, Oussama; Isheim, Dieter; Blumtritt, Horst; Senz, Stephan; Pippel, Eckhard; Seidman, David N

    2013-04-04

    The incorporation of impurities during the growth of nanowires from the vapour phase alters their basic properties substantially, and this process is critical in an extended range of emerging nanometre-scale technologies. In particular, achieving precise control of the behaviour of group III and group V dopants has been a crucial step in the development of silicon (Si) nanowire-based devices. Recently it has been demonstrated that the use of aluminium (Al) as a growth catalyst, instead of the usual gold, also yields an effective p-type doping, thereby enabling a novel and efficient route to functionalizing Si nanowires. Besides the technological implications, this self-doping implies the detachment of Al from the catalyst and its injection into the growing nanowire, involving atomic-scale processes that are crucial for the fundamental understanding of the catalytic assembly of nanowires. Here we present an atomic-level, quantitative study of this phenomenon of catalyst dissolution by three-dimensional atom-by-atom mapping of individual Al-catalysed Si nanowires using highly focused ultraviolet-laser-assisted atom-probe tomography. Although the observed incorporation of the catalyst atoms into nanowires exceeds by orders of magnitude the equilibrium solid solubility and solid-solution concentrations in known non-equilibrium processes, the Al impurities are found to be homogeneously distributed in the nanowire and do not form precipitates or clusters. As well as the anticipated effect on the electrical properties, this kinetics-driven colossal injection also has direct implications for nanowire morphology. We discuss the observed strong deviation from equilibrium using a model of solute trapping at step edges, and identify the key growth parameters behind this phenomenon on the basis of a kinetic model of step-flow growth of nanowires. The control of this phenomenon provides opportunities to create a new class of nanoscale devices by precisely tailoring the shape and

  8. Structural domain walls in polar hexagonal manganites

    NASA Astrophysics Data System (ADS)

    Kumagai, Yu

    2014-03-01

    The domain structure in the multiferroic hexagonal manganites is currently intensely investigated, motivated by the observation of intriguing sixfold topological defects at their meeting points [Choi, T. et al,. Nature Mater. 9, 253 (2010).] and nanoscale electrical conductivity at the domain walls [Wu, W. et al., Phys. Rev. Lett. 108, 077203 (2012).; Meier, D. et al., Nature Mater. 11, 284 (2012).], as well as reports of coupling between ferroelectricity, magnetism and structural antiphase domains [Geng, Y. et al., Nano Lett. 12, 6055 (2012).]. The detailed structure of the domain walls, as well as the origin of such couplings, however, was previously not fully understood. In the present study, we have used first-principles density functional theory to calculate the structure and properties of the low-energy structural domain walls in the hexagonal manganites [Kumagai, Y. and Spaldin, N. A., Nature Commun. 4, 1540 (2013).]. We find that the lowest energy domain walls are atomically sharp, with {210}orientation, explaining the orientation of recently observed stripe domains and suggesting their topological protection [Chae, S. C. et al., Phys. Rev. Lett. 108, 167603 (2012).]. We also explain why ferroelectric domain walls are always simultaneously antiphase walls, propose a mechanism for ferroelectric switching through domain-wall motion, and suggest an atomistic structure for the cores of the sixfold topological defects. This work was supported by ETH Zurich, the European Research Council FP7 Advanced Grants program me (grant number 291151), the JSPS Postdoctoral Fellowships for Research Abroad, and the MEXT Elements Strategy Initiative to Form Core Research Center TIES.

  9. Nonlinear alternating current conduction in polycrystalline manganites

    SciTech Connect

    Ghosh, T. N.; Nandi, U. N.; Jana, D.; Dey, K.; Giri, S.

    2014-06-28

    The real part of ac conductance Σ(T, f) of yttrium-doped mixed-valent polycrystalline manganite systems La{sub 1−x−y}Y{sub y}Ca{sub x}MnO{sub 3} with x = 0.33 and 0.05 and y = 0.07 and iron doped LaMn{sub 1−x}Fe{sub x}O{sub 3} with x = 0.15 is measured as a function of frequency f by varying zero-frequency Ohmic conductance Σ{sub 0} by T. The former shows a metal-insulator transition, whereas the latter exhibits insulating character throughout the measured temperature range. At a fixed temperature T, Σ(T, f) remains almost constant to the value Σ{sub 0} up to a certain frequency, known as the onset frequency f{sub c} and increases from Σ{sub 0} as frequency is increased from f{sub c}. Scaled appropriately, the data for Σ(T, f) at different T fall on the same universal curve, indicating the existence of a general scaling formalism for the ac conductance. f{sub c} scales with Σ{sub 0} as f{sub c}∼Σ{sub 0}{sup x{sub f}}, where x{sub f} is the nonlinearity exponent characterising the onset. With the help of data for ac conduction, it is shown that x{sub f} is very much phase sensitive and can be used to characterize the different phases in a manganite system originated due to change in temperature or disorder. Scaling theories and existing theoretical models are used to analyze the results of ac conduction and the nonlinearity exponent x{sub f}.

  10. Route towards huge magnetoresistance in doped polymers

    NASA Astrophysics Data System (ADS)

    Kersten, S. P.; Meskers, S. C. J.; Bobbert, P. A.

    2012-07-01

    Room-temperature magnetoresistance of the order of 10% has been observed in organic semiconductors. We predict that even larger magnetoresistance can be realized in suitably synthesized doped conjugated polymers. In such polymers, ionization of dopants creates free charges that recombine with a rate governed by a competition between an applied magnetic field and random hyperfine fields. This leads to a spin-blocking effect that depends on the magnetic field. We show that the combined effects of spin blocking and charge blocking, the fact that two free charges cannot occupy the same site, lead to a magnetoresistance of almost two orders of magnitude. This magnetoresistance occurs even at vanishing electric field and is therefore a quasiequilibrium effect. The influences of the dopant strength, energetic disorder, and interchain hopping are investigated. We find that the dopant strength and energetic disorder have only little influence on the magnetoresistance. Interchain hopping strongly decreases the magnetoresistance because it can lift spin-blocking and charge-blocking configurations that occur in strictly one-dimensional transport. We provide suggestions for realization of polymers that should show this magnetoresistance.

  11. Magnetoresistive sensor for weak magnetic fields

    NASA Astrophysics Data System (ADS)

    Moran, Timothy J.; Dahlberg, E. Dan

    1997-04-01

    A new excitation technique is described for the measurement of weak magnetic fields (<0.01 Oe). The resistance variation of a magnetoresistive element due to an oscillating excitation field is converted into a voltage proportional to the environmental field. The excitation field amplitude is set large enough to saturate the magnetization during each half-cycle, greatly reducing hysteresis effects in the output signal. Both anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR) structures have been used to measure fields with sufficient accuracy for compass applications. Such devices could be made with extremely small dimensions and power requirements.

  12. Griffiths phase and temporal effects in phase separated manganites

    NASA Astrophysics Data System (ADS)

    Krivoruchko, V. N.; Marchenko, M. A.

    2016-08-01

    Phenomenological description of relaxation phenomena in magnetic and transport properties of perovskite manganites has been presented. The approach is based on generalization of some hypotheses appropriate to the Preisach picture of magnetization process for half-metallic ferromagnets and on an assumption that in doped manganites the phase separated state exists near the magnetic ordering temperature. For systems with the percolation type of a ferromagnet-paramagnet transition, distinctive features in relaxation of magnetization and resistivity have been found. The relaxation is shown to be most pronounced near the transition temperature, and to be an approximately logarithmic function of time. The theoretical results replicate a broad spectrum of behavior observed experimentally on time dependence of magnetization and resistivity of CMR systems and allow a direct comparison with available experimental data. We propose an additional experimental test to distinguish between the percolation scenario of magnetic and transport transitions in doped manganites, and the ferromagnetic polaron picture. In particular, an anomalously slow relaxation to zero of the order parameter can be considered as a key feature of the Griffiths-like phase transition in doped manganites. It is also shown that a system with the Griffiths-like state will exhibit nonequilibrium aging and rejuvenation phenomena, which in many aspects resemble that of a spin glass. We hope that experimental observation of a set of time decay properties will provide a settlement of apparently conflicting results obtained for different characteristics of phase-separated manganites.

  13. Tunneling magnetoresistance of silicon chains

    SciTech Connect

    Matsuura, Yukihito

    2016-05-28

    The tunneling magnetoresistance (TMR) of a silicon chain sandwiched between nickel electrodes was examined by using first-principles density functional theory. The relative orientation of the magnetization in a parallel-alignment (PA) configuration of two nickel electrodes enhanced the current with a bias less than 0.4 V compared with that in an antiparallel-alignment configuration. Consequently, the silicon chain-nickel electrodes yielded good TMR characteristics. In addition, there was polarized spin current in the PA configuration. The spin polarization of sulfur atoms functioning as a linking bridge between the chain and nickel electrode played an important role in the magnetic effects of the electric current. Moreover, the hybridization of the sulfur 3p orbital and σ-conjugated silicon 3p orbital contributed to increasing the total current.

  14. Visualization of a ferromagnetic metallic edge state in manganite strips.

    PubMed

    Du, Kai; Zhang, Kai; Dong, Shuai; Wei, Wengang; Shao, Jian; Niu, Jiebin; Chen, Jinjie; Zhu, Yinyan; Lin, Hanxuan; Yin, Xiaolu; Liou, Sy-Hwang; Yin, Lifeng; Shen, Jian

    2015-02-04

    Recently, broken symmetry effect induced edge states in two-dimensional electronic systems have attracted great attention. However, whether edge states may exist in strongly correlated oxides is not yet known. In this work, using perovskite manganites as prototype systems, we demonstrate that edge states do exist in strongly correlated oxides. Distinct appearance of ferromagnetic metallic phase is observed along the edge of manganite strips by magnetic force microscopy. The edge states have strong influence on the transport properties of the strips, leading to higher metal-insulator transition temperatures and lower resistivity in narrower strips. Model calculations show that the edge states are associated with the broken symmetry effect of the antiferromagnetic charge-ordered states in manganites. Besides providing a new understanding of the broken symmetry effect in complex oxides, our discoveries indicate that novel edge state physics may exist in strongly correlated oxides beyond the current two-dimensional electronic systems.

  15. Combustion Synthesis and Properties of Fine Particle Spinel Manganites

    NASA Astrophysics Data System (ADS)

    Dhas, N. Arul; Patil, K. C.

    1993-02-01

    Fine particle spinel manganites have been prepared by thermal decomposition of the precursors N2H5M1/3Mn2/3(N2H3COO)3 · H2O (M = Co and Ni) and M1/3 Mn2/3(N2H3COO)2 · 2H2O (M = Mg and Zn), as well as by the combustion of redox mixtures containing M(II) nitrate (M = Mg, Co, Ni, Cu, and Zn), Mn(II) nitrate, and maleic hydrazide (MH) in the required molar ratio. Both the precursor and redox mixtures undergo self-propagating, gas-producing, exothermic reactions once ignited at 250-375°C to yield corresponding manganites in less than 5 min. Formation of single phase products was confirmed by X-ray powder diffraction patterns. The manganites are of submicrometer size and have surface area in the range 20-76 m2/g.

  16. Competing Mechanisms in Organic Magnetoresistance

    NASA Astrophysics Data System (ADS)

    Koopmans, Bert

    2013-03-01

    A surprisingly large ``organic magnetoresistance'' (OMAR) has been found in both polymers and small molecule organic semiconductors at relatively small applied magnetic fields (~ 5 mT) and at room temperature. Unlike spin-injection devices, where the occurrence of a finite spin polarization of the current is essential for measuring a finite magnetoresistance, OMAR is generally considered to be due to spin correlations between spin carrying particles in the organic material. Although the microscopic mechanisms of hyperfine field induced spin mixing are relatively well understood, it is still intensively debated which particles are involved and how they can affect the current in such a drastic manner. In this presentation recent developments and new insights as to the underlying physics are discussed. Quantitative models will be introduced, based on different pairs of particles and mechanisms, and giving rise to effects at a variety of field scales. It will be discussed how specific device physics causes a non-trivial relation between microscopic spin-dependent reactions and macroscopic device behaviour. Finally, it will be shown how comprehensive studies on especially engineered organic systems, including polymer-fullerene blends and molecular doping, can be used to pinpoint the relevance of different mechanisms in the complementary regimes. The experimentally observed linewidth, sign and amplitude of both ``high-field'' (>100 mT) and ``low-field'' (~ 5 mT) effects, as well as their bias voltage dependence display very pronounced features as a function of fullerene doping. They provide unique fingerprints for which mechanism is of relevance. After careful analysis, this allows for identification of three earlier proposed mechanisms, involving exciton-charge, electron-hole and bipolaron (polarons of like charge) reactions. Present activities are aiming at using this insight for tailoring OMAR response by design.

  17. Viscous magnetoresistance of correlated electron liquids

    NASA Astrophysics Data System (ADS)

    Levchenko, Alex; Xie, Hong-Yi; Andreev, A. V.

    2017-03-01

    We develop a theory of magnetoresistance of two-dimensional electron systems in a smooth disorder potential in the hydrodynamic regime. Our theory applies to two-dimensional semiconductor structures with strongly correlated carriers when the mean free path due to electron-electron collisions is sufficiently short. The dominant contribution to magnetoresistance arises from the modification of the flow pattern by the Lorentz force, rather than the magnetic field dependence of the kinetic coefficients of the electron liquid. The resulting magnetoresistance is positive and quadratic at weak fields. Although the resistivity is governed by both the viscosity and thermal conductivity of the electron fluid, the magnetoresistance is controlled by the viscosity only. This enables the extraction of viscosity of the electron liquid from magnetotransport measurements.

  18. Magnetoresistance in inhomogeneous graphene/metal hybrids

    NASA Astrophysics Data System (ADS)

    Moktadir, Zakaria; Mizuta, Hiroshi

    2013-02-01

    We investigate extraordinary magnetoresistance (EMR) of inhomogeneous graphene-metal hybrids using finite element modelling. Inhomogeneous graphene is a binary system made of electron and hole puddles. Two geometries of the embedded metallic structure were considered: circular and fishbone geometries. We found that the breaking of graphene into charge puddles weakens the magnetoresistance of the hybrid system compared to a homogeneous graphene-metal system. For a fixed value of the magnetic field, the magnetoresistance increases with decreasing area fraction occupied by electrons puddles. Fishbone geometry showed an enhanced magnetoresistance compared to circular geometry. The EMR is also investigated as a function of the contact resistance for the fishbone geometry where it was found that a minimal contact resistance is essential to obtain enhanced EMR in graphene-metal hybrid devices.

  19. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    NASA Astrophysics Data System (ADS)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  20. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    PubMed Central

    Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo

    2015-01-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices. PMID:26387967

  1. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    PubMed

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  2. Organic magnetoresistance based on hopping theory

    NASA Astrophysics Data System (ADS)

    Yang, Fu-Jiang; Xie, Shi-Jie

    2014-09-01

    For the organic magnetoresistance (OMAR) effect, we suggest a spin-related hopping of carriers (polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation (ME) and then the magnetoresistance (MR) is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder, hyperfine interaction (HFI), polaron localization, and temperature on the MR are investigated.

  3. Giant magnetoresistance through a single molecule.

    PubMed

    Schmaus, Stefan; Bagrets, Alexei; Nahas, Yasmine; Yamada, Toyo K; Bork, Annika; Bowen, Martin; Beaurepaire, Eric; Evers, Ferdinand; Wulfhekel, Wulf

    2011-03-01

    Magnetoresistance is a change in the resistance of a material system caused by an applied magnetic field. Giant magnetoresistance occurs in structures containing ferromagnetic contacts separated by a metallic non-magnetic spacer, and is now the basis of read heads for hard drives and for new forms of random access memory. Using an insulator (for example, a molecular thin film) rather than a metal as the spacer gives rise to tunnelling magnetoresistance, which typically produces a larger change in resistance for a given magnetic field strength, but also yields higher resistances, which are a disadvantage for real device operation. Here, we demonstrate giant magnetoresistance across a single, non-magnetic hydrogen phthalocyanine molecule contacted by the ferromagnetic tip of a scanning tunnelling microscope. We measure the magnetoresistance to be 60% and the conductance to be 0.26G(0), where G(0) is the quantum of conductance. Theoretical analysis identifies spin-dependent hybridization of molecular and electrode orbitals as the cause of the large magnetoresistance.

  4. The role of thermal coupling on avalanches in manganites.

    PubMed

    Macià, F; Abril, G; Hernandez, J M; Tejada, J

    2009-10-07

    We report here a study on the environmental dependence of the occurrence, at low temperature, of ultra-sharp field induced avalanches in phase separated manganites. Despite the high reproducibility of avalanches, it has already been observed that the critical fields shift with the magnetic field sweep rate and that different sample sizes lead to different ignition fields for the avalanches. Critical growing rates have been suggested to describe the avalanche ignition though the role of thermal coupling has hardly been considered. We qualitatively analyze here a set of experimental data on avalanches in manganites and discuss the role of thermal coupling as a key parameter of the instability in a dynamical system.

  5. Seed layer technique for high quality epitaxial manganite films.

    PubMed

    Graziosi, P; Gambardella, A; Calbucci, M; O'Shea, K; MacLaren, D A; Riminucci, A; Bergenti, I; Fugattini, S; Prezioso, M; Homonnay, N; Schmidt, G; Pullini, D; Busquets-Mataix, D; Dediu, V

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  6. Seed layer technique for high quality epitaxial manganite films

    NASA Astrophysics Data System (ADS)

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O'Shea, K.; MacLaren, D. A.; Riminucci, A.; Bergenti, I.; Fugattini, S.; Prezioso, M.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  7. Seed layer technique for high quality epitaxial manganite films

    PubMed Central

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O’Shea, K.; MacLaren, D. A.; Bergenti, I.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-01-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived. PMID:27648371

  8. Isotope effect and cation disorder in manganites

    NASA Astrophysics Data System (ADS)

    Babushkina, N. A.; Chistotina, E. A.; Balagurov, A. M.; Pomjakushin, V. Yu.; Gorbenko, O. Yu.; Kaul, A. R.; Kartavtseva, M. S.

    2006-05-01

    The measurements of temperature dependence of electrical resistivity ρ(T) and magnetic susceptibility χ(T) as well as neutron diffraction studies were performed for three groups of R1-xSrxMnO3 manganites. Each group was characterized by the same average ionic radius of rare earth R, but by different degree of cation disorder σ2=xiri2-2. For each composition, the isotope-substituted samples ( O16→O18) were also prepared. It was shown that the increase in σ2 at fixed leads to appreciable changes in electrical and magnetic properties, as well as to a more pronounced isotope effect. Large values of σ2 give rise to a significant scatter in the values of the electron hopping integral for neighboring Mn sites. This favors the electron localization and the tendency to antiferromagnetism in the phase-separated state, thus enhancing the effect of oxygen isotope substitution.

  9. Chemical Pressure Effects in Layered Manganites

    NASA Astrophysics Data System (ADS)

    Moritomo, Yutaka; Maruyama, Yousuke; Nakamura, Arao

    1998-03-01

    Lattice effects on the magnetic and transport properties have been investigated for layered-type doped mangaites. The insulator-to-metal transition temperature for La_1.2Sr_1.8Mn_2O7 (T_C=130 K) is significantly suppressed with chemical substitution of the trivalent La^3+ ions to smaller Nd^3+ (or Sm^3+) ions(Y. Moritomo et al), Phys. Rev. B56(1997)R7057. Similarly, the charge-ordering temperature for La_0.5Sr_1.5MnO4 (T_CO=230 K) is suppresses with chemical substitution(Y. Moritomo et al), Phys. Rev. B56, in press. Systematic x-ray as well as neutron diffraction measurements have revealed that above chemical pressure enhances the static Jahn-Teller distortion of the MnO6 octahedra in both the system. We will explain the suppressions of TC and T_CO in terms of the increasing d_3z^2-r^2 character in the occupied eg state. Our observation indicates that the chemical pressure effects are qualitatively different between the cubic and layered manganites systems. The authors are grateful to K. Ohoyama and M. Ohashi for their help in neutron diffraction measurements, and to S. Mori for his help in electron diffraction measurements. This work was supported by a Grant-In-Aid for Scientific Research from the Ministry of Education, Science, Sport and Culture and from PRESTO, Japan Scienece and Technology Corporation (JST), Japan.

  10. Designing new ferrite/manganite nanocomposites.

    PubMed

    Muscas, G; Anil Kumar, P; Barucca, G; Concas, G; Varvaro, G; Mathieu, R; Peddis, D

    2016-01-28

    Two kinds of nanocomposites of transition metal oxides were synthesized and investigated. Each nanocomposite comprises nanoparticles of La0.67Ca0.33MnO3 and CoFe2O4 in similar volume fractions, however arranged with different morphologies. The temperature-dependent magnetic and electrical properties of the two systems are found to greatly differ, suggesting different degrees of interaction and coupling of their constituents. This is confirmed by magnetic field-dependent experiments, which reveal contrasted magnetization reversal and magnetoresistance in the systems. We discuss this morphology-physical property relationship, and the possibility to further tune the magnetism and magneto-transport in such nanocomposites.

  11. Unconventional proximity effect and inverse spin-switch behavior in a model manganite-cuprate-manganite trilayer system.

    PubMed

    Salafranca, Juan; Okamoto, Satoshi

    2010-12-17

    The proximity effect in a model manganite-cuprate system is investigated theoretically. We consider a situation in which spin-polarized electrons in manganite layers antiferromagnetically couple with electrons in cuprate layers as observed experimentally. The effect of the interfacial magnetic coupling is found to be much stronger than the injection of spin-polarized electrons into the cuprate region. As a result, the superconducting transition temperature depends on the thickness of the cuprate layer significantly. Since the magnetic coupling creates negative polarization, an applied magnetic field and the negative polarization compete, resulting in the inverse spin-switch behavior where the superconducting transition temperature is increased by applying a magnetic field.

  12. Unconventional proximity effect and inverse spin-switch behavior in a model manganite-cuprate-manganite trilayer system

    SciTech Connect

    Salafranca Laforga, Juan I; Okamoto, Satoshi

    2010-01-01

    The proximity effect in a model manganite-cuprate system is investigated theoretically. We consider a situation in which spin-polarized electrons in manganite layers antiferromagnetically couple with electrons in cuprate layers as observed experimentally. The effect of the interfacial magnetic coupling is found to be much stronger than the injection of spin-polarized electrons into the cuprate region. As a result, the superconducting transition temperature depends on the thickness of the cuprate layer significantly. Since the magnetic coupling creates negative polarization, an applied magnetic field and the negative polarization compete, resulting in the inverse spin-switch behavior where the superconducting transition temperature is increased by applying a magnetic field.

  13. Influence of the lanthanum deficit on electrical resistivity and heat capacity of silver-doped lanthanum manganites La{sub 1-x}Ag{sub y}MnO{sub 3}

    SciTech Connect

    Abdulvagidov, Sh. B. Gamzatov, A. G.; Mel'nikov, O. V.; Gorbenko, O. Yu.

    2009-12-15

    The electrical resistivity and heat capacity of the silver-doped lanthanum manganites La{sub 0.80}Ag{sub 0.15}MnO{sub 3} and La{sub 0.85}Ag{sub 0.15}MnO{sub 3} have been investigated. Despite the nonstoichiometry of the composition, the La{sub 0.80}Ag{sub 0.15}MnO{sub 3} manganite exhibits a bulk homogeneity and better physical properties from the applied point of view as compared to the La{sub 0.85}Ag{sub 0.15}MnO{sub 3} manganite, viz., the former compound has a higher spontaneous magnetoresistance and a larger jump of the heat capacity with a small width of the phase transition, and the anomalies of the heat capacity and electrical resistivity in the vicinity of the Curie point of this compound agree with the fluctuation nature of the second-order phase transition. The behavior of the properties of lanthanum-deficient manganites under investigation in the region of the phase transition is consistent with the classical theory of indirect exchange interaction. The behavior of the temperature dependence of the electrical resistivity has been analyzed in terms of two models. One of these models is based on the tunneling of charge carriers between ferrons or polarons, and the other model is based on the polaron hopping conduction. Both approaches lead to consistent results, and their combination has made it possible to estimate the tunneling distance of charge carriers. The origin of the influence of technological parameters characterizing the synthesis of La{sub 1-x}Ag{sub y}MnO{sub 3} ceramic materials on their physical properties has been elucidated.

  14. Ferromagnetic and antiferromagnetic orders of a phase-separated manganite probed throughout the B -T phase diagram

    NASA Astrophysics Data System (ADS)

    Windsor, Y. W.; Tanaka, Yoshikazu; Scagnoli, V.; Garganourakis, M.; de Souza, R. A.; Medarde, M.; Cheong, S.-W.; Staub, U.

    2016-12-01

    We employ resonant soft x-ray diffraction (RSXD) to isolate the signal from the CE-type antiferromagnetic phase of (La,Pr)1- xC axMn O3 (with x ≈3 /8 ), and follow only this phase through the known phases of the material in the B -T phase diagram. This material is known to exhibit a range of electronic ordering phenomena, most notably a metal-insulator transition (associated with colossal magnetoresistance) and phase separation between the antiferromagnetic phase and a ferromagnetic phase. Bulk magnetization measurements under the same B -T conditions were also conducted, giving a full picture of both phases for direct side-by-side comparison. The comparison specifically focuses on the metal-insulator transition. Upon magnetic field ramping to this transition, we find that the CE-type order undergoes a sharp quench at high temperatures (above phase coexistence temperatures) but that at lower temperatures, where the CE order is metastable, the transition broadens significantly. At the lowest temperatures, where a spin glass-type phase is expected, a slow annihilation of remanent CE domains is observed. Finally, a refined phase diagram is presented.

  15. Iron Manganites Synthesis by the Soft Chemistry Method

    DTIC Science & Technology

    2001-04-01

    Tailhades and Abel Rousset Centre Interuniversitaire de Recherche et d’Ingenierie des Materiaux , UMR CNRS 5085, LCMIE, Universite Paul Sabatier, 118... resistance effects have been found in similar spinel phases [4]. The aim of this work is to improve the synthesis of iron manganites Mn(3x)FexO 4, using

  16. Structural imperfections and magnetoresistive properties of the ceramic La0.6Sr0.2Mn1,2-xFexO3±δ

    NASA Astrophysics Data System (ADS)

    Pashchenko, V. P.; Shemyakov, A. A.; Pashchenko, A. V.; Prokopenko, V. K.; Revenko, Yu. F.; Turchenko, V. A.; Varyukhin, V. N.; D'yakonov, V. P.; Szymczak, H.

    2007-08-01

    The x-ray structural, resistive, magnetic, and Mn55 NMR methods are used to investigate the ceramic magnetoresistive lanthanum manganite perovskites La0.6Sr0.2Mn1,2-xFexO3 (x =0, 0.02, 0.05, and 0.1) annealed at 1170 and 1500°C. It is found that increasing the Fe content decreases the metal-semiconductor phase transition temperature Tms and the Curie temperature TC, and increases the peak of the magnetoresistive effect near these phase transitions and results in growth of the peak at low temperatures, where the magnetoresistive effect is due to tunneling transitions of carriers between crystallites. The wide asymmetric Mn55 NMR spectrum, whose resonance frequency shifts with increasing x to lower frequencies, confirms the high-frequency electron-hole exchange between the Mn3+ and Mn4+ ions and the high degree of lattice imperfections, including not only vacancies but also clusters. The hysteresis in the field dependences of the magnetization at 4.2K is due to a change in the fraction of low-spin Mn2+ in clusters, whose magnetism appears below 42K. The increase of the activation energy with increasing Fe content is explained by the influence of these ions on the structural defect density, the charge carrier concentration, and the electron-hole exchange between heterovalent manganese ions in B positions.

  17. Tunneling magnetoresistive heads for magnetic data storage.

    PubMed

    Mao, Sining

    2007-01-01

    Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 approximately 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the

  18. Classical and quantum routes to linear magnetoresistance

    NASA Astrophysics Data System (ADS)

    Hu, Jingshi

    The transverse, positive magnetoresistance of suitably doped silver chalcogenides and indium antimonides changes linearly with magnetic field by thousands of percent, with no sign of saturation up to MegaGauss. A precise characterization of these unexpected observations has led to two very different, yet equally interesting magnetotransport mechanisms: the classical inhomogeneity-induced current jetting, and quantum linear magnetoresistance. The inhomogeneous distribution of excess/deficient silver atoms lies behind the anomalous magnetoresistive response of silver chalcogenides, introducing spatial conductivity fluctuations with length scales independent of the cyclotron radius. We show that a systematic investigation of the resistivity tensor in longitudinal field could be used to identify the spatial inhomogeneities and determine the associated length scale of the current distortion. By contrast, the linear magnetoresistance observed in single-crystalline InSb presents a spectacular manifestation of magnetotransport in the extreme quantum limit, when only one Landau band is partially filled. Harnessing both the classical and quantum effects opens the gate to artificial fabrication of conducting networks with micron scale unit size for enhanced magnetoresistive sensitivity.

  19. Observation of large thermoelectric power in charge ordered La1-xLixMnO3 (x = 0.25) manganite system

    NASA Astrophysics Data System (ADS)

    Taran, S.; Yang, H. D.

    2016-12-01

    In the present investigation detailed structural, electrical, magnetic and thermoelectric measurements on bulk samples of Li-doped La1-xLixMnO3+δ (0.05 ≤ x ≤ 0.3) manganites have been done. The samples are synthesized by wet-chemical mixing route and XRD analysis using Rietveld refinement revealed single phase behaviour upto Li-concentration x = 0.25. All the samples in the present series show ferromagnetic behaviour while metallic behaviour is shown by the samples upto Li concentration x = 0.2. Beyond x = 0.2 the sample (i.e., La0.75Li0.25MnO3) show insulating behaviour for the entire temperature range accompanied by charge-order transition around T = 225 K. The low temperature resistivity data are best fitted by ρ(T) = ρ0 + ρ4.5T 4.5 + C/sinh2(hυs/2kBT), where C is a constant. Such behaviour might be an indication of the small-polaron coherent motion which involves a relaxation due to a soft optical phonon mode that is strongly coupled to the carriers. Thermoelectric power (TEP) measurements reveal interesting results showing a colossal value of -340 μV/K around 25 K for the CO sample in the present series. The probable mechanism responsible for the observed large TEP has been discussed here.

  20. Spin relaxation signature of colossal magnetic anisotropy in platinum atomic chains

    PubMed Central

    Bergman, Anders; Hellsvik, Johan; Bessarab, Pavel F.; Delin, Anna

    2016-01-01

    Recent experimental data demonstrate emerging magnetic order in platinum atomically thin nanowires. Furthermore, an unusual form of magnetic anisotropy – colossal magnetic anisotropy (CMA) – was earlier predicted to exist in atomically thin platinum nanowires. Using spin dynamics simulations based on first-principles calculations, we here explore the spin dynamics of atomically thin platinum wires to reveal the spin relaxation signature of colossal magnetic anisotropy, comparing it with other types of anisotropy such as uniaxial magnetic anisotropy (UMA). We find that the CMA alters the spin relaxation process distinctly and, most importantly, causes a large speed-up of the magnetic relaxation compared to uniaxial magnetic anisotropy. The magnetic behavior of the nanowire exhibiting CMA should be possible to identify experimentally at the nanosecond time scale for temperatures below 5 K. This time-scale is accessible in e.g., soft x-ray free electron laser experiments. PMID:27841287

  1. Rb2Ti2O5 : Superionic conductor with colossal dielectric constant

    NASA Astrophysics Data System (ADS)

    Federicci, Rémi; Holé, Stéphane; Popa, Aurelian Florin; Brohan, Luc; Baptiste, Benoît.; Mercone, Silvana; Leridon, Brigitte

    2017-08-01

    Electrical conductivity and high dielectric constant are in principle self-excluding, which makes the terms insulator and dielectric usually synonymous. This is certainly true when the electrical carriers are electrons, but not necessarily in a material where ions are extremely mobile, electronic conduction is negligible, and the charge transfer at the interface is immaterial. Here we demonstrate in a perovskite-derived structure containing five-coordinated Ti atoms, a colossal dielectric constant (up to 109) together with very high ionic conduction 10-3Scm-1 at room temperature. Coupled investigations of I -V and dielectric constant behavior allow us to demonstrate that, due to ion migration and accumulation, this material behaves like a giant dipole, exhibiting colossal electrical polarization (of the order of 0.1Ccm-2 ). Therefore it may be considered as a "ferro-ionet" and is extremely promising in terms of applications.

  2. Spin relaxation signature of colossal magnetic anisotropy in platinum atomic chains

    NASA Astrophysics Data System (ADS)

    Bergman, Anders; Hellsvik, Johan; Bessarab, Pavel F.; Delin, Anna

    2016-11-01

    Recent experimental data demonstrate emerging magnetic order in platinum atomically thin nanowires. Furthermore, an unusual form of magnetic anisotropy - colossal magnetic anisotropy (CMA) - was earlier predicted to exist in atomically thin platinum nanowires. Using spin dynamics simulations based on first-principles calculations, we here explore the spin dynamics of atomically thin platinum wires to reveal the spin relaxation signature of colossal magnetic anisotropy, comparing it with other types of anisotropy such as uniaxial magnetic anisotropy (UMA). We find that the CMA alters the spin relaxation process distinctly and, most importantly, causes a large speed-up of the magnetic relaxation compared to uniaxial magnetic anisotropy. The magnetic behavior of the nanowire exhibiting CMA should be possible to identify experimentally at the nanosecond time scale for temperatures below 5 K. This time-scale is accessible in e.g., soft x-ray free electron laser experiments.

  3. Argentophilicity-dependent colossal thermal expansion in extended prussian blue analogues.

    PubMed

    Goodwin, Andrew L; Keen, David A; Tucker, Matthew G; Dove, Martin T; Peters, Lars; Evans, John S O

    2008-07-30

    The thermal expansion behavior of isostructural variants of the colossal thermal expansion material Ag3[CoIII(CN)6] has been investigated using variable temperature X-ray and neutron powder diffraction. It was found that substitution at the octahedral transition metal site did not strongly affect the thermal expansion behavior, giving Ag3[FeIII(CN)6] as a new colossal thermal expansion material. Substitution at the Ag site (by D) was shown to reduce the thermal expansion coefficients by an order of magnitude. It was proposed that this correlation between the presence of argentophilic interactions and extreme thermal expansion behavior may explain a variety of thermal effects in flexible framework materials containing metallophilic interactions.

  4. Giant Magneto-Resistance in Epitaxial (La0.7Sr0.3MnO3)0.5: (ZnO)0.5 Nanocomposites

    SciTech Connect

    Pan, Wei; Jiang, Y. X.; Ihlefeld, Jon; Lu, Ping; Lee, Stephen R.

    2015-12-01

    A great deal of research has been carried out in oxide material systems. Among them, ZnO and La0.7Sr0.3MnO3 (LSMO) are of particular interest due to their superb optical properties and colossal magneto-resistive effect. Here, we report our recent results of magneto-transport studies in self-assembled, epitaxial (ZnO)0.5:(La0.7Sr0.3MnO3)0.5 nanocomposite films.

  5. Enhanced magnetoresistance induced by oxygen deficiency in La{sub 0.4}Ca{sub 0.6}MnO{sub 3-δ} oxides

    SciTech Connect

    Triki, M. Dhahri, E.; Hlil, E. K.; Garden, J. L.

    2014-03-14

    We report electrical features and magnetoresistance behavior of the oxygen deficient La{sub 0.4}Ca{sub 0.6}MnO{sub 3-δ} perovskites (δ = 0, 0.15, and 0.2). These samples will be referred to as S0, S15, and S20, respectively. The dependence of electrical transport on temperature and magnetic field is systematically investigated between 2 K and 400 K in magnetic field ranging up to 5 T. The parent compound shows a stable charge ordering/antiferromagnetic state with a semiconductor-like behavior in all considered temperature range. The variable range hopping and thermally activated hopping models are found to fit well with the electrical resistivity data at low and high temperatures, respectively. Oxygen deficiency tends to weaken the charge ordering and induce ferromagnetism and metallicity at low temperature. Metal insulator transition appears at higher fields for lower oxygen deficit (S15 sample) and without field for the S20 sample. The resistivity data for S15 sample are discussed in the framework of the variable-range hopping model. Abnormal transport properties were observed in the S20 sample, characterized by the double metal-insulator transitions and low minimum behavior. These results are discussed in terms of phenomenological percolation model, based on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions. While the parent compound shows no magnetoresistance, a large magnetoresistance is observed in the deficient samples at low temperature reaching 90% and 75% at 2 T for S15 and S20 samples, respectively. Noticeably, these values reached 98% and 91% at 5 T. The appearance of colossal magnetoresistance is attributed to the spin dependent hopping between spin clusters and/or ferromagnetic domains.

  6. Spin Hall magnetoresistance at high temperatures

    SciTech Connect

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-02-02

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y{sub 3}Fe{sub 5}O{sub 12} (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface.

  7. A Material Showing Colossal Positive and Negative Volumetric Thermal Expansion with Hysteretic Magnetic Transition.

    PubMed

    Hu, Ji-Xiang; Xu, Yang; Meng, Yin-Shan; Zhao, Liang; Hayami, Shinya; Sato, Osamu; Liu, Tao

    2017-10-09

    It is an ongoing challenge to design and synthesize magnetic materials that undergo colossal thermal expansion and that possess potential applications as microscale or nanoscale actuators with magnetic functionality. A paramagnetic metallocyanate building block was used to construct a cyanide-bridged Fe-Co complex featuring both positive and negative colossal volumetric thermal-expansion behavior. A detailed study revealed that metal-to-metal charge transfer between 180 and 240 K induced a volumetric thermal expansion coefficient of 1498 MK(-1) accompanied with hysteretic spin transition. Rotation of the magnetic building blocks induced change of π⋅⋅⋅π interactions, resulting in a negative volume expansion coefficient of -489 MK(-1) , and another hysteretic magnetic transition between 300 and 350 K. This work presents a strategy for incorporating both colossal positive and negative volumetric thermal expansion with shape and magnetic memory effects in a material. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Magnetoresistive Sensors in Biological Assays

    NASA Astrophysics Data System (ADS)

    Tondra, Mark

    2010-03-01

    Magnetic beads or nanoparticles can be used as ``labels'' in biochemical assays by attaching the beads to the biospecies of interest using a bio-specific attachment. Once the labels are attached, they can be used to manipulate, capture, and detect the species to be analyzed. Magnetoresistive (MR) sensors may be used to detect and count these labels, and thus make an inference about the concentration of the species of interest. MR technology is especially promising for biosensor applications where making the detector small and integrated with related sample handling tools to form a ``lab-on-a-chip'' miniaturized system. The function of the MR sensors is to detect stray magnetic fields from the beads while they are exposed to a magnetic excitation field. Generally, the stray fields from beads and clusters of beads are complicated functions of geometry, so some care is required to relate the detected magnetic signal to the number and location of the bead labels. This presentation will begin with a broad overview of results from many groups working in this area. For convenience, the applications are divided into three categories, detection of: flowing magnetic beads, immobilized beads, and scanned samples. Next will be some discussion of how the choice of spintronic sensor technology might affect detection capabilities (AMR, GMR, TMR, Hall effect, etc). Then, challenges relating to integration of MR sensors into microfluidic products will be discussed. This is the focus of the presenter's current day-to-day work on developing and producing MR-based biosensors. And finally, a description of possible future avenues of study and development will be presented.

  9. Giant magnetoresistance in granular FeSiO 2 films

    NASA Astrophysics Data System (ADS)

    Zhao, B.; Yan, X.

    1997-02-01

    We studied resistivity, magnetoresistivity and magnetization in granular FeSiO 2 films. In the hopping region, magnetoresistance was found to be as large as -5%, and is isotropic for different measurement geometry, which is the signature of giant magnetoresistance due to a spin-dependent conduction process. Temperature dependence of magnetoresistance could be described qualitatively but not quantitatively by two specific spin-dependent tunnelling models. We found that resistivity ϱ changes five orders of magnitude by altering measurement temperature, annealing temperature or metal volume fraction, and that magnetoresistivity -Δϱ increases with ϱ monotonously.

  10. Magnetic, electrical, magnetoelectrical, and magnetoelastic properties of La0.9Sr0.1MnO3 - y manganites

    NASA Astrophysics Data System (ADS)

    Koroleva, L. I.; Zashchirinskiĭ, D. M.; Khapaeva, T. M.; Gurskiĭ, L. I.; Kalanda, N. A.; Trukhan, V. M.; Szymczak, R.; Krzumanska, B.

    2010-01-01

    This paper reports on a study of the influence of oxygen deficiency on the magnetization, paramagnetic susceptibility, electrical resistivity, magnetoresistance, and volume magnetostriction of the La0.9Sr0.1MnO3 - y manganite with y = 0.03, 0.10, and 0.15. The magnetization M( T) behaves in a complex way with temperature; for T < 80 K, it only weakly depends on T, and at 80 ≤ T ≤ 300 K, the M( T) curve shows a falloff. Within the interval 240 K ≤ T ≤ 300 K, the long-range magnetic order breaks up into superparamagnetic clusters. For T < 80 K, the magnetic moment per formula unit is about one-fourth that which should be expected for complete ferromagnetic alignment of Mn ion moments. Although the composition with y = 0.03, in which part of acceptor centers is compensated by donors (oxygen vacancies), the negative magnetoresistance Δρ/ρ and volume magnetostriction ω are observed to pass through maxima near the Curie point, their values are one to two orders of magnitude smaller than those for the y = 0 composition. In compositions with y = 0.10 and 0.15 with electronic doping, the values of Δρ/ρ and ω are smaller by one to two orders of magnitude than those observed for the y = 0.03 composition. They do not display giant magnetoresistance and volume magnetostriction effects, which evidences the absence of ferrons near unionized oxygen vacancies. This allows the conclusion that the part played by both compensated and uncompensated doubly charged donors consists in forming dangling Mn-O-Mn bonds, which lead to a decrease in the Curie temperature with increasing y and to the formation above it of superparamagnetic clusters of the nonferron type.

  11. Monte Carlo calculations of the magnetoresistance in magnetic multilayer structures with giant magnetoresistance effects

    NASA Astrophysics Data System (ADS)

    Prudnikov, V. V.; Prudnikov, P. V.; Romanovskiy, D. E.

    2016-06-01

    A Monte Carlo study of trilayer and spin-valve magnetic structures with giant magnetoresistance effects is carried out. The anisotropic Heisenberg model is used for description of magnetic properties of ultrathin ferromagnetic films forming these structures. The temperature and magnetic field dependences of magnetic characteristics are considered for ferromagnetic and antiferromagnetic configurations of these multilayer structures. The methodology for determination of the magnetoresistance by the Monte Carlo method is introduced; this permits us to calculate the magnetoresistance of multilayer structures for different thicknesses of the ferromagnetic films. The calculated temperature dependence of the magnetoresistance agrees very well with the experimental results measured for the Fe(0 0 1)-Cr(0 0 1) multilayer structure and CFAS-Ag-CFAS-IrMn spin-valve structure based on the half-metallic Heusler alloy Co2FeAl0.5Si0.5.

  12. Nonlocal quartic interactions and universality classes in perovskite manganites.

    PubMed

    Singh, Rohit; Dutta, Kishore; Nandy, Malay K

    2015-07-01

    A modified Ginzburg-Landau model with a screened nonlocal interaction in the quartic term is treated via Wilson's renormalization-group scheme at one-loop order to explore the critical behavior of the paramagnetic-to-ferromagnetic phase transition in perovskite manganites. We find the Fisher exponent η to be O(ε) and the correlation exponent to be ν=1/2+O(ε) through epsilon expansion in the parameter ε=d(c)-d, where d is the space dimension, d(c)=4+2σ is the upper critical dimension, and σ is a parameter coming from the nonlocal interaction in the model Hamiltonian. The ensuing critical exponents in three dimensions for different values of σ compare well with various existing experimental estimates for perovskite manganites with various doping levels. This suggests that the nonlocal model Hamiltonian contains a wide variety of such universality classes.

  13. Transient electronic structure of the photoinduced phase of Pr0.7Ca0.3MnO3 probed with soft x-ray pulses

    SciTech Connect

    Rini, M.; Zhu, Y.; Wall, S.; Tobey, R. I.; Ehrke, H.; Garl, T.; Freeland, J. W.; Tomioka, Y.; Tokura, Y.; Cavalleri, A.; Schoenlein, R. W.

    2009-04-01

    We use time-resolved x-ray absorption near-edge structure spectroscopy to investigate the electronic dynamics associated with the photoinduced insulator-to-metal phase transition in the colossal magnetoresistive manganite Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}. Absorption changes at the O K and Mn L edges directly monitor the evolution of the density of unoccupied states in the transient photoinduced phase. We show that the electronic structure of the photoinduced phase is remarkably similar to that of the ferromagnetic metallic phase reached in related manganites upon cooling below the Curie temperature.

  14. Multifunctionality attributed to the self-doping in polycrystalline La0.9MnO3: Coexistence of large magnetoresistance and magnetocaloric effect

    NASA Astrophysics Data System (ADS)

    Patra, M.; De, K.; Majumdar, S.; Giri, S.

    2009-03-01

    We report the multifunctionality near room temperature attributed to the self-doping in polycrystalline La0.9MnO3. The peak in the temperature dependence of magnetoresistance (MR) and change of magnetic entropy (ΔSM) are observed at 254 K with -MR=55% at 50 kOe and -SM=4.9 J/kg K at 20 kOe where the Curie temperature and metal-insulator transition coexist at 254 K associated with a first order transition. The correlation between resistivity and ΔSM is observed in a limited region around TC. Here ΔSM is close to the largest reported values in manganites, suggesting that the material is interesting for multiple applications.

  15. Electroresistance and field effect studies on manganite based heterostructure

    SciTech Connect

    Solanki, P. S.; Khachar, Uma; Vagadia, Megha; Ravalia, Ashish; Katba, Savan; Kuberkar, D. G.

    2015-04-14

    Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrNb{sub 0.002}Ti{sub 0.998}O{sub 3} (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (E{sub LZ}), (ii) SNTO as a control electrode (E{sub LS}), and (iii) shorted ZnO and SNTO as control electrodes (E{sub LZS}). For this, channel electric field (E{sub CH}) dependent variation in channel resistance (R{sub C}) (of manganite channel) and I-V (across manganite channel) under various control fields (E{sub C}) have been studied. Variation in barrier height (Φ{sub B}) with control field (E{sub C}) for different geometries has been discussed.

  16. Engineering magnetism at functional oxides interfaces: manganites and beyond.

    PubMed

    Yi, Di; Lu, Nianpeng; Chen, Xuegang; Shen, Shengchun; Yu, Pu

    2017-07-26

    The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

  17. Electroresistance and field effect studies on manganite based heterostructure

    NASA Astrophysics Data System (ADS)

    Solanki, P. S.; Khachar, Uma; Vagadia, Megha; Ravalia, Ashish; Katba, Savan; Kuberkar, D. G.

    2015-04-01

    Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La0.7Sr0.3MnO3/SrNb0.002Ti0.998O3 (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (ELZ), (ii) SNTO as a control electrode (ELS), and (iii) shorted ZnO and SNTO as control electrodes (ELZS). For this, channel electric field (ECH) dependent variation in channel resistance (RC) (of manganite channel) and I-V (across manganite channel) under various control fields (EC) have been studied. Variation in barrier height (ΦB) with control field (EC) for different geometries has been discussed.

  18. Novel Resistive Switching Behavior in Phase Separated Manganites

    NASA Astrophysics Data System (ADS)

    Guo, Hangwen; Ward, T. Zac; Sun, Dali; Snijders, Paul C.; Gai, Zheng; Shen, Jian

    2011-03-01

    Electronic phase separation plays a key role in many novel phenomena in complex materials. Manganites are a prime example of this class of materials and have recently come under increase scrutiny for possible application in resistive random-access memory (RRAM) technology. Here, we will discuss our recent work on spatially confined La5/8-xPrxCa3/8MnO3. We have discovered that it is possible to drive single electronic domain formation/annihilation through electric field pulsing. By measuring the I-V curve, we find such resistive switching is different from normal RRAM mechanisms in manganites and is closely related to the nature of electronic phase separation. These findings open these systems to a new understanding of the nature of electronic phase separation and begin the development of manganites for future applications in RRAM devices. Research sponsored by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy.

  19. Spatially Resolved Photoemission Spectroscopy to Probe Electronic Phase Separation in Manganites and Related Compounds

    NASA Astrophysics Data System (ADS)

    Das Sarma, Dipankar

    2005-03-01

    Manganese oxides that exhibit colossal magnetoresistance (CMR) are often characterised by a competition of different electronic phases that critically influence their properties and leads to the coexistence of spatially separated competing phases. Despite extensive experimentation, characteristic length-scales associated with phase coexistence remains an important open question. While theoretical work has pointed to a nanometric length-scale, experiments have uncovered multiple length-scales ranging from the atomic to the sub-micron, covering many orders of magnitude. The role of chemical inhomogeneity in driving this phenomenon is not well understood. Moreover, these early experiments were carried out on polycrystalline and thin film specimens. Here we use a spatially resolved, direct spectroscopic probe for electronic structure with an additional unique sensitivity to chemical compositions to investigate high quality single crystal sample of La1/4Pr3/8Ca3/8MnO3. The formation of distinct electronic domains is observed in absence of any perceptible chemical inhomogeneity, where the relevant length-scale is at least an order of magnitude larger than all previous estimates. The present results, exhibiting memory effects in the domain morphology, suggest that electronic domain formation is intimately connected with long-range strains, often thought to be an important ingredient in the physics of this effect. Additionally, we have also applied this technique to a variety of related materials, such as (LuMnO3)0.79(La5/8Sr3/8MnO3)0.21, and Sr2FexMo1-xO6. Our preliminary results in all these cases suggest that the existence of spatially inhomogeneous electronic phases plays important roles in determining many of the interesting properties of such systems. This work is carried out in collaboration with M. Bertolo, G. Cautero, S-W. Cheong, A. Fujimori, T. Y. Koo, S.R. Krishnakumar, U. Manju, S. Ray, S. La Rosa P. A. Sharma and D. Topwal.

  20. Metastability and inverse magnetocaloric effect in doped manganite (Nd(0.25)Sm(0.25)Sr(0.5)MnO3) and ferromagnetic shape memory alloy (Ni2Mn(1.36)Sn(0.64)): a comparison.

    PubMed

    Chatterjee, S; Giri, S; Majumdar, S

    2012-09-12

    The manganite Nd(0.25)Sm(0.25)Sr(0.5)MnO(3) (NSSMO) shows a first-order metal to insulator transition on cooling, which is concomitant with a magnetic transition from the ferromagnetic to antiferromagnetic state. In some respect the sample shows a striking similarity with Ni-Mn-Sn based ferromagnetic shape memory alloys (FSMAs) undergoing a first-order magneto-structural transition, and efforts have been made to highlight the similarities and dissimilarities of the studied manganite with one such FSMA of composition Ni(2)Mn(1.36)Sn(0.64). From our transport and magnetic investigations, the region of transition in the NSSMO is found to be highly metastable, with a clear indication of a magnetically arrested state which persists even when the sample is cooled down to the lowest temperature of measurement. Interestingly, the studied manganite shows an inverse magnetocaloric effect similar to the FSMA. However, a striking difference between the two compositions is evident in the low-temperature magneto-transport behavior: while a clear signature of tunneling magnetoresistance is present in NSSMO due to the coexisting metallic and insulating clusters of nanometer dimension, the studied FSMA do not show such behavior due to the absence of any insulating phase in the intermetallic alloy.

  1. Magnetoresistive system with concentric ferromagnetic asymmetric nanorings

    SciTech Connect

    Avila, J. I. Tumelero, M. A.; Pasa, A. A.; Viegas, A. D. C.

    2015-03-14

    A structure consisting of two concentric asymmetric nanorings, each displaying vortex remanent states, is studied with micromagnetic calculations. By orienting in suitable directions, both the asymmetry of the rings and a uniform magnetic field, the vortices chiralities can be switched from parallel to antiparallel, obtaining in this way the analogue of the ferromagnetic and antiferromagnetic configurations found in bar magnets pairs. Conditions on the thickness of single rings to obtain vortex states, as well as formulas for their remanent magnetization are given. The concentric ring structure enables the creation of magnetoresistive systems comprising the qualities of magnetic nanorings, such as low stray fields and high stability. A possible application is as contacts in spin injection in semiconductors, and estimations obtained here of magnetoresistance change for a cylindrical spin injection based device show significant variations comparable to linear geometries.

  2. Dirac State in Giant Magnetoresistive Materials

    NASA Astrophysics Data System (ADS)

    Wu, Y.; Jo, N. H.; Ochi, M.; Huang, L.; Mou, D.; Kong, T.; Mun, E.; Wang, L.; Lee, Y.; Bud'Ko, S. L.; Canfield, P. C.; Trivedi, N.; Arito, R.; Kaminski, A.

    We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based angle-resolved photoemission spectroscopy (ARPES) to study the electronic properties of materials that recently were discovered to display titanic magnetoresistance. We find that that several of these materials have Dirac-like features in their band structure. In some materials those features are ``ordinary'' Dirac cones, while in others the linear Dirac dispersion of two crossing bands forms a linear object in 3D momentum space. Our observation poses an important question about the role of Dirac dispersion in the unusually high, non-saturating magnetoresistance of these materials. Research was supported by the US DOE, Office of Basic Energy Sciences under Contract No. DE-AC02-07CH11358; Gordon and Betty Moore Foundation EPiQS Initiative (Grant No. GBMF4411); CEM, a NSF MRSEC, under Grant No. DMR-1420451.

  3. Modeling anisotropic magnetoresistance in layered antiferromagnets

    NASA Astrophysics Data System (ADS)

    Santos, D. L. R.; Pinheiro, F. A.; Velev, J.; Chshiev, M.; Castro, J. d.'Albuquerque e.; Lacroix, C.

    2017-06-01

    We have investigated the electronic transport and the anisotropic magnetoresistance in systems consisting of pairs of antiferromagnetically aligned layers separated by a non-magnetic layer, across which an antiferromagnetic coupling between the double layers is established. Calculations have been performed within the framework of the tight-binding model, taking into account the exchange coupling within the ferromagnetic layers and the Rashba spin-orbit interaction. Conductivities have been evaluated in the ballistic regime, based on Kubo formula. We have systematically studied the dependence of the conductivity and of the anisotropic magnetoresistance on several material and structural parameters, such as the orientation of the magnetic moments relative to the crystalline axis, band filling, out-of-plane hopping and spin-orbit parameter.

  4. Anisotropic giant magnetoresistance in NbSb₂

    DOE PAGES

    Wang, Kefeng; Graf, D.; Li, Lijun; ...

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10⁵% in 2 K and 9 T field, and 4.3 × 10⁶% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb₂. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed tomore » the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.« less

  5. An analytic approach to tunnelling magnetoresistance

    NASA Astrophysics Data System (ADS)

    Eames, M. E.; Inkson, J. C.

    2009-08-01

    We present an analytic model for the barrier transmission coefficient that can be used to calculate the tunnelling magnetoresistance (TMR) for metal-insulator-metal systems. It removes the approximations inherent in the Simmons' and Brinkman models currently used to fit experimental systems that give much lower predictions of the barrier height than would be expected. The model is accurate enough to directly relate to the experiment and hence device optimisation by predicting junction parameters that are in line with bulk properties.

  6. Large hysteretic magnetoresistance of silicide nanostructures

    NASA Astrophysics Data System (ADS)

    Kim, T.; Naser, B.; Chamberlin, R. V.; Schilfgaarde, M. V.; Bennett, P. A.; Bird, J. P.

    2007-11-01

    We demonstrate a large (as much as 100%) and strongly hysteretic magnetoresistance (MR) in nominally nonferromagnetic silicide films and nanowires. This unusual MR is quenched above a few kelvins, where conventional behavior due to weak antilocalization is recovered. The dynamic characteristics of this effect are suggestive of weakly interacting, localized paramagnetic moments that form at the surface oxide of the silicide nanostructures, with dramatic consequences for transport when the system size is reduced to the nanoscale.

  7. Ultra-Sensitive Magnetoresistive Displacement Sensing Device

    NASA Technical Reports Server (NTRS)

    Olivas, John D. (Inventor); Lairson, Bruce M. (Inventor); Ramesham, Rajeshuni (Inventor)

    2003-01-01

    An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

  8. Multiple crossovers between positive and negative magnetoresistance versus field due to fragile spin structure in metallic GdPd3 [Oscillating magnetoresistance due to fragile spin structure in metallic GdPd3

    DOE PAGES

    Pandey, Abhishek; Mazumdar, Chandan; Ranganathan, R.; ...

    2017-02-17

    Here, studies on the phenomenon of magnetoresistance (MR) have produced intriguing and application-oriented outcomes for decades–colossal MR, giant MR and recently discovered extremely large MR of millions of percents in semimetals can be taken as examples. We report here the discovery of novel multiple sign changes versus applied magnetic field of the MR in the cubic intermetallic compound GdPd3. Our study shows that a very strong correlation between magnetic, electrical and magnetotransport properties is present in this compound. The magnetic structure in GdPd3 is highly fragile since applied magnetic fields of moderate strength significantly alter the spin arrangement within themore » system–a behavior that manifests itself in the oscillating MR. Intriguing magnetotransport characteristics of GdPd3 are appealing for field-sensitive device applications, especially if the MR oscillation could materialize at higher temperature by manipulating the magnetic interaction through perturbations caused by chemical substitutions.« less

  9. Colossal negative thermal expansion in BiNiO3 induced by intermetallic charge transfer.

    PubMed

    Azuma, Masaki; Chen, Wei-tin; Seki, Hayato; Czapski, Michal; Olga, Smirnova; Oka, Kengo; Mizumaki, Masaichiro; Watanuki, Tetsu; Ishimatsu, Naoki; Kawamura, Naomi; Ishiwata, Shintaro; Tucker, Matthew G; Shimakawa, Yuichi; Attfield, J Paul

    2011-06-14

    The unusual property of negative thermal expansion is of fundamental interest and may be used to fabricate composites with zero or other controlled thermal expansion values. Here we report that colossal negative thermal expansion (defined as linear expansion <-10(-4) K(-1) over a temperature range ~100 K) is accessible in perovskite oxides showing charge-transfer transitions. BiNiO(3) shows a 2.6% volume reduction under pressure due to a Bi/Ni charge transfer that is shifted to ambient pressure through lanthanum substitution for Bi. Changing proportions of coexisting low- and high-temperature phases leads to smooth volume shrinkage on heating. The crystallographic linear expansion coefficient for Bi(0.95)La(0.05)NiO(3) is -137×10(-6) K(-1) and a value of -82×10(-6) K(-1) is observed between 320 and 380 K from a dilatometric measurement on a ceramic pellet. Colossal negative thermal expansion materials operating at ambient conditions may also be accessible through metal-insulator transitions driven by other phenomena such as ferroelectric orders.

  10. Colossal negative thermal expansion in BiNiO3 induced by intermetallic charge transfer

    PubMed Central

    Azuma, Masaki; Chen, Wei-tin; Seki, Hayato; Czapski, Michal; Olga, Smirnova; Oka, Kengo; Mizumaki, Masaichiro; Watanuki, Tetsu; Ishimatsu, Naoki; Kawamura, Naomi; Ishiwata, Shintaro; Tucker, Matthew G.; Shimakawa, Yuichi; Attfield, J. Paul

    2011-01-01

    The unusual property of negative thermal expansion is of fundamental interest and may be used to fabricate composites with zero or other controlled thermal expansion values. Here we report that colossal negative thermal expansion (defined as linear expansion <−10−4 K−1 over a temperature range ~100 K) is accessible in perovskite oxides showing charge-transfer transitions. BiNiO3 shows a 2.6% volume reduction under pressure due to a Bi/Ni charge transfer that is shifted to ambient pressure through lanthanum substitution for Bi. Changing proportions of coexisting low- and high-temperature phases leads to smooth volume shrinkage on heating. The crystallographic linear expansion coefficient for Bi0.95La0.05NiO3 is −137×10−6 K−1 and a value of −82×10−6 K−1 is observed between 320 and 380 K from a dilatometric measurement on a ceramic pellet. Colossal negative thermal expansion materials operating at ambient conditions may also be accessible through metal-insulator transitions driven by other phenomena such as ferroelectric orders. PMID:21673668

  11. Electron-pinned defect-dipoles for high-performance colossal permittivity materials.

    PubMed

    Hu, Wanbiao; Liu, Yun; Withers, Ray L; Frankcombe, Terry J; Norén, Lasse; Snashall, Amanda; Kitchin, Melanie; Smith, Paul; Gong, Bill; Chen, Hua; Schiemer, Jason; Brink, Frank; Wong-Leung, Jennifer

    2013-09-01

    The immense potential of colossal permittivity (CP) materials for use in modern microelectronics as well as for high-energy-density storage applications has propelled much recent research and development. Despite the discovery of several new classes of CP materials, the development of such materials with the required high performance is still a highly challenging task. Here, we propose a new electron-pinned, defect-dipole route to ideal CP behaviour, where hopping electrons are localized by designated lattice defect states to generate giant defect-dipoles and result in high-performance CP materials. We present a concrete example, (Nb+In) co-doped TiO₂ rutile, that exhibits a largely temperature- and frequency-independent colossal permittivity (> 10(4)) as well as a low dielectric loss (mostly < 0.05) over a very broad temperature range from 80 to 450 K. A systematic defect analysis coupled with density functional theory modelling suggests that 'triangular' In₂(3+)Vo(••)Ti(3+) and 'diamond' shaped Nb₂(5+)Ti(3+)A(Ti) (A = Ti(3+)/In(3+)/Ti(4+)) defect complexes are strongly correlated, giving rise to large defect-dipole clusters containing highly localized electrons that are together responsible for the excellent CP properties observed in co-doped TiO₂. This combined experimental and theoretical work opens up a promising feasible route to the systematic development of new high-performance CP materials via defect engineering.

  12. Electron-pinned defect-dipoles for high-performance colossal permittivity materials

    NASA Astrophysics Data System (ADS)

    Hu, Wanbiao; Liu, Yun; Withers, Ray L.; Frankcombe, Terry J.; Norén, Lasse; Snashall, Amanda; Kitchin, Melanie; Smith, Paul; Gong, Bill; Chen, Hua; Schiemer, Jason; Brink, Frank; Wong-Leung, Jennifer

    2013-09-01

    The immense potential of colossal permittivity (CP) materials for use in modern microelectronics as well as for high-energy-density storage applications has propelled much recent research and development. Despite the discovery of several new classes of CP materials, the development of such materials with the required high performance is still a highly challenging task. Here, we propose a new electron-pinned, defect-dipole route to ideal CP behaviour, where hopping electrons are localized by designated lattice defect states to generate giant defect-dipoles and result in high-performance CP materials. We present a concrete example, (Nb+In) co-doped TiO2 rutile, that exhibits a largely temperature- and frequency-independent colossal permittivity (> 104) as well as a low dielectric loss (mostly < 0.05) over a very broad temperature range from 80 to 450 K. A systematic defect analysis coupled with density functional theory modelling suggests that ‘triangular’ In23+VO••Ti3+ and ‘diamond’ shaped Nb25+Ti3+ATi (A  =  Ti3+/In3+/Ti4+) defect complexes are strongly correlated, giving rise to large defect-dipole clusters containing highly localized electrons that are together responsible for the excellent CP properties observed in co-doped TiO2. This combined experimental and theoretical work opens up a promising feasible route to the systematic development of new high-performance CP materials via defect engineering.

  13. Spin-dependent electron transport in manganite bicrystal junctions

    SciTech Connect

    Petrzhik, A. M. Demidov, V. V.; Ovsyannikov, G. A.; Borisenko, I. V.; Shadrin, A. V.

    2012-11-15

    Magnetic bicrystal films and junctions of magnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) and La{sub 0.67}Ca{sub 0.33}MnO{sub 3} (LCMO) films epitaxially grown on NdGaO{sub 3} substrates with the (110) planes of their two parts misoriented (tilted) at angles of 12 Degree-Sign , 22 Degree-Sign , 28 Degree-Sign , and 38 Degree-Sign are investigated. For comparison, bicrystal boundaries with a 90 Degree-Sign misorientation of the axes of the NdGaO{sub 3} (110) planes were fabricated. The directions of the axes and the magnetic anisotropy constants of the films on both sides of the boundary are determined by two independent techniques of magnetic resonance spectroscopy. The magnetic misorientation of the axes in the substrate plane has been found to be much smaller than the crystallographic misorientation for tilted bicrystal boundaries, while the crystallographic and magnetic misorientation angles coincide for boundaries with rotation of the axes. An increase in the magnetoresistance and characteristic resistance of bicrystal junctions with increasing misorientation angle was observed experimentally. The magnetoresistance of bicrystal junctions has been calculated by taking into account the uniaxial anisotropy, which has allowed the contributions from the tunneling and anisotropic magnetoresistances to be separated. The largest tunneling magnetoresistance was observed on LCMO bicrystal junctions, in which the characteristic resistance of the boundary is higher than that in LSMO boundaries.

  14. Magnetoresistive phenomena in nanoscale magnetic systems

    NASA Astrophysics Data System (ADS)

    Burton, John D.

    Nanomagnetic materials are playing an increasingly important role in modern technologies. A particular area of interest involves the interplay between magnetism and electric transport, i.e. magnetoresistive properties. Future generations of field sensors and memory elements will have to be on a length scale of a few nanometers or smaller. Magnetoresistive properties of such nanoscale objects exhibit novel features due to reduced dimensionality, complex surfaces and interfaces, and quantum effects. In this dissertation theoretical aspects of three such nanoscale magnetoresistive phenomena are discussed. Very narrow magnetic domain walls can strongly scatter electrons leading to an increased resistance. Specifically, this dissertation will cover the newly predicted effect of magnetic moment softening in magnetic nanocontacts or nanowires. Atomically thin domain walls in Ni exhibit a reduction, or softening, of the local magnetic moments due to the noncollinearity of the magnetization. This effect leads to a strong enhancement of the resistance of a domain wall. Magnetic tunnel junctions (MTJs) consist of two ferromagnetic electrodes separated by a thin layer of insulating material through which current can be carried by electron tunneling. The resistance of an MTJ depends on the relative orientation of the magnetization of the two ferromagnetic layers, an effect known as tunneling magnetoresistance (TMR). A first-principles analysis of CoFeB|MgO|CoFeB MTJs will be presented. Calculations reveal that it is energetically favorable for interstitial boron atoms to reside at the interface between the electrode and MgO tunneling barrier, which can be detrimental to the TMR effect. Anisotropic magnetoresistance (AMR) is the change in resistance of a ferromagnetic system as the orientation of the magnetization is altered. In this dissertation, the focus will be on AMR in the tunneling regime. Specifically we will present new theoretical results on tunneling AMR (TAMR) in two

  15. Nonlinear electron-phonon coupling in doped manganites

    DOE PAGES

    Esposito, Vincent; Fechner, M.; Mankowsky, R.; ...

    2017-06-15

    Here, we employ time-resolved resonant x-ray diffraction to study the melting of charge order and the associated insulator-to-metal transition in the doped manganite Pr0.5Ca0.5MnO3 after resonant excitation of a high-frequency infrared-active lattice mode. We find that the charge order reduces promptly and highly nonlinearly as function of excitation fluence. Density-functional theory calculations suggest that direct anharmonic coupling between the excited lattice mode and the electronic structure drives these dynamics, highlighting a new avenue of nonlinear phonon control.

  16. Driving magnetic order in a manganite by ultrafast lattice excitation.

    SciTech Connect

    Forst, M.; Tobey, R. I.; Wall, S.; Bromberger, H.; Khanna, V.; Cavalieri, A. L.; Chuang, Y.-D.; Lee, W. S.; Moore, R.; Schlotter, W. F.; Turner, J. J.; Krupin, O.; Trigo, M.; Zheng, H.; Mitchell, J. F.; Dhesi, S. S.; Hill, J. P.; Cavalleri, A.

    2011-01-01

    Femtosecond midinfrared pulses are used to directly excite the lattice of the single-layer manganite La{sub 0.5}Sr{sub 1.5}MnO{sub 4}. Magnetic and orbital orders, as measured by femtosecond resonant soft x-ray diffraction with an x-ray free-electron laser, are reduced within a few picoseconds. This effect is interpreted as a displacive exchange quench, a prompt shift in the equilibrium value of the magnetic- and orbital-order parameters after the lattice has been distorted. Control of magnetism through ultrafast lattice excitation may be of use for high-speed optomagnetism.

  17. Manipulation of ferroelectric vortex domains in hexagonal manganites

    NASA Astrophysics Data System (ADS)

    Lilienblum, M.; Soergel, E.; Fiebig, M.

    2011-09-01

    The modification of ferroelectric vortex domain patterns in hexagonal manganites (here exemplified by YMnO3 and HoMnO3) owing to chemical treatment, thermal annealing, and local electric-field poling is investigated by piezoresponse force microscopy. Chemical treatment transfers the domain pattern into a topographical pattern by domain selective etching. Thermal annealing alters the domain pattern without any sign of temperature memory effects. Local electric fields affect the domain structure with possible signs of electric memory effects. These observations are important for future investigations of the microscopic mechanisms and macroscopic parameters defining the formation of ferroelectric domains in this unusual multiferroic.

  18. Magnetization of manganite thin films on ferroelectric substrates

    NASA Astrophysics Data System (ADS)

    Eremina, R.; Seidov, Z.; Ibrahimov, I.; Najafzade, M.; Aljanov, M.; Mamedov, D.; Gavrilova, T.; Gilmutdinov, I.; Chichkov, V.; Andreev, N.

    2017-10-01

    Here we report the magnetic susceptibility measurements of magnetron sputtered orthorhombic manganite RMnO3 (R=Yb, Gd) thin films deposited on dielectric LaAlO3 and ferroelectric SrTiO3, LiNbO3 substrates. We observed that all of investigated o-RMnO3 films show a splitting in the temperature dependence of ZFC and FC magnetization curves. We found that the substrate can impact on the splitting temperature ZFC-FC curves and absolute value of the magnetization of thin films.

  19. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

    NASA Astrophysics Data System (ADS)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y. B.; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-01

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~105%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  20. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    PubMed

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  1. Hall effect and magnetoresistivity in the ternary molybdenum sulfides

    NASA Technical Reports Server (NTRS)

    Woollam, J. A.; Haugland, E. J.; Alterovitz, S. A.

    1978-01-01

    The Hall coefficient and magnetoresistance of sputtered films of Cu(x)Mo6S8 and PbMo6S8 have been measured, as well as the magnetoresistance in sintered samples of the same materials. Assuming a single band model, net carrier densities and mean mobilities are determined

  2. Hall effect and magnetoresistivity in the ternary molybdenum sulfides

    NASA Technical Reports Server (NTRS)

    Woollam, J. A.; Haugland, E. J.; Alterovitz, S. A.

    1978-01-01

    The Hall coefficient and magnetoresistance of sputtered films of Cu(x)Mo6S8 and PbMo6S8 have been measured, as well as the magnetoresistance in sintered samples of the same materials. Assuming a single band model, net carrier densities and mean mobilities are determined

  3. Large magnetoresistance in oxide based ferromagnet/superconductor spin switches.

    SciTech Connect

    Pena, V.; Nemes, N.; Visani, C.; Garcia-Barriocanal, J.; Bruno, F.; Arias, D.; Sefrioui, Z.; Leon, C.; te Velthuis, S. G. E.; Hoffmann, A.; Garcia-Hernandez, M.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid; Inst. de Ciencia de Materiales de Madrid

    2006-01-01

    We report large magnetoresistance (in excess of 1000%) in ferromagnet / superconductor / ferromagnet structures made of La{sub 0.7}Ca{sub 0.3}MnO{sub 3} and YBa{sub 2}Cu{sub 3}O{sub 7} in the current in plane (CIP) geometry. This magnetoresistance has many of the ingredients of the giant magnetoresistance of metallic superlattices: it is independent on the angle between current and magnetic field, depends on the relative orientation of the magnetization in the ferromagnetic layers, and takes very large values. The origin is enhanced scattering at the F/S interface in the anti parallel configuration of the magnetizations. Furthermore, we examine the dependence of the magnetoresistance effect on the thickness of the superconducting layer, and show that the magnetoresistance dies out for thickness in excess of 30 nm, setting a length scale for the diffusion of spin polarized quasiparticles.

  4. Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems

    NASA Astrophysics Data System (ADS)

    Hewett, T. H.; Kusmartsev, F. V.

    We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The important aspect of this discovery is that the system must have a quasi-two-dimensional character. Using the same materials and geometries for the samples as in experiments by Solin et al.1,2, we show that such systems indeed exhibit a huge magnetoresistance. The magnetoresistance arises due to the switching of electrical current paths passing through the metallic inclusion. Diagrams illustrating the flow of the current density within the samples are utilised in discussion of the mechanism responsible for the magnetoresistance effect. Extensions are then suggested which may be applicable to the silver chalcogenides. Our theory offers an excellent description and explanation of experiments where a huge magnetoresistance has been discovered2,3.

  5. Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems

    NASA Astrophysics Data System (ADS)

    Hewett, T. H.; Kusmartsev, F. V.

    2010-12-01

    We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The important aspect of this discovery is that the system must have a quasi-two-dimensional character. Using the same materials and geometries for the samples as in experiments by Solin et al.1,2, we show that, such systems indeed exhibit a huge magnetoresistance. The magnetoresistance arises due to the switching of electrical current paths passing through the metallic inclusion. Diagrams illustrating the flow of the current density within the samples are utilised in discussion of the mechanism responsible for the magnetoresistance effect. Extensions are then suggested which may be applicable to the silver chalcogenides. Our theory offers an excellent description and explanation of experiments where a huge magnetoresistance has been discovered2,3.

  6. Measurement system for temperature dependent noise characterization of magnetoresistive sensors.

    PubMed

    Nording, F; Weber, S; Ludwig, F; Schilling, M

    2017-03-01

    Magnetoresistive (MR) sensors and sensor systems are used in a large variety of applications in the field of industrial automation, automotive business, aeronautic industries, and instrumentation. Different MR sensor technologies like anisotropic magnetoresistive, giant magnetoresistive, and tunnel magnetoresistive sensors show strongly varying properties in terms of magnetoresistive effect, response to magnetic fields, achievable element miniaturization, manufacturing effort, and signal-to-noise ratio. Very few data have been reported so far on the comparison of noise performance for different sensor models and technologies, especially including the temperature dependence of their characteristics. In this paper, a stand-alone measurement setup is presented that allows a comprehensive characterization of MR sensors including sensitivity and noise over a wide range of temperatures.

  7. Measurement system for temperature dependent noise characterization of magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Nording, F.; Weber, S.; Ludwig, F.; Schilling, M.

    2017-03-01

    Magnetoresistive (MR) sensors and sensor systems are used in a large variety of applications in the field of industrial automation, automotive business, aeronautic industries, and instrumentation. Different MR sensor technologies like anisotropic magnetoresistive, giant magnetoresistive, and tunnel magnetoresistive sensors show strongly varying properties in terms of magnetoresistive effect, response to magnetic fields, achievable element miniaturization, manufacturing effort, and signal-to-noise ratio. Very few data have been reported so far on the comparison of noise performance for different sensor models and technologies, especially including the temperature dependence of their characteristics. In this paper, a stand-alone measurement setup is presented that allows a comprehensive characterization of MR sensors including sensitivity and noise over a wide range of temperatures.

  8. Origin of the extremely large magnetoresistance in the semimetal YSb

    NASA Astrophysics Data System (ADS)

    Xu, J.; Ghimire, N. J.; Jiang, J. S.; Xiao, Z. L.; Botana, A. S.; Wang, Y. L.; Hao, Y.; Pearson, J. E.; Kwok, W. K.

    2017-08-01

    Electron-hole (e -h ) compensation is a hallmark of multiband semimetals with extremely large magnetoresistance (XMR) and has been considered to be the basis for XMR. Recent spectroscopic experiments, however, reveal that YSb with nonsaturating magnetoresistance is uncompensated, questioning the e -h compensation scenario for XMR. Here we demonstrate with magnetoresistivity and angle-dependent Shubnikov-de Haas (SdH) quantum oscillation measurements that YSb does have nearly perfect e -h compensation, with a density ratio of ˜0.95 for electrons and holes. The density and mobility anisotropy of the charge carriers revealed in the SdH experiments allow us to quantitatively describe the magnetoresistance with an anisotropic multiband model that includes contributions from all Fermi pockets. We elucidate the role of compensated multibands in the occurrence of XMR by demonstrating the evolution of calculated magnetoresistances for a single band and for various combinations of electron and hole Fermi pockets.

  9. Technology Trend of Sputtering System for Magnetoresistive Devices

    NASA Astrophysics Data System (ADS)

    Tsunekawa, Koji

    Magnetoresistive films used for read-heads of hard disc drives, magnetic random access memory devices, and magnetic sensors are fabricated by magnetron sputtering method. Since giant magnetoresistive and tunnel magnetoresistive films are composed of multilayered films, in which the thickness of each layer is in the nanometer range, high accuracy in thickness control and thickness uniformity is required for the sputtering systems. Film properties are also influenced by the quality of the vacuum during the fabrication process. This article addresses such issues on the deposition of magnetoresistive films, and introduces mass-production sputtering technologies capable of fabricating high quality multilayers. Furthermore, fabrication methods of the tunnel barrier in tunnel magnetoresistive devices are also described.

  10. Large magnetoresistance effect in nitrogen-doped silicon

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Yang, Zhaolong; Wang, Wei; Si, Mingsu; Yang, Dezheng; Liu, Huiping; Xue, Desheng

    2017-05-01

    In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f) of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

  11. Strain heterogeneity and magnetoelastic behaviour of nanocrystalline half-doped La, Ca manganite, La0.5Ca0.5MnO3.

    PubMed

    Pagliari, L; Dapiaggi, M; Maglia, F; Sarkar, T; Raychaudhuri, A K; Chatterji, T; Carpenter, M A

    2014-10-29

    Elastic and anelastic properties of La0.5Ca0.5MnO3 determined by resonant ultrasound spectroscopy in the frequency range ∼100-1200 kHz have been used to evaluate the role of grain size in determining the competition between ferromagnetism and Jahn-Teller/charge order of manganites which show colossal magneto resistance. At crystallite sizes of ∼75 and ∼135 nm the dominant feature is softening of the shear modulus as the charge order transition point, Tco (∼225 K), is approached from above and below, matching the form of softening seen previously in samples with 'bulk' properties. This is consistent with a bilinear dominant strain/order parameter coupling, which occurs between the tetragonal shear strain and the Jahn-Teller (Γ3(+)) order parameter. At crystallite sizes of ∼34 and ∼42 nm the charge ordered phase is suppressed but there is still softening of the shear modulus, with a minimum near Tco. This indicates that some degree of pseudoproper ferroelastic behaviour is retained. The primary cause of the suppresion of the charge ordered structure in nanocrystalline samples is therefore considered to be due to suppression of macroscopic strain, even though MnO6 octahedra must develop some Jahn-Teller distortions on a local length scale. This mechanism for stabilizing ferromagnetism differs from imposition of either an external magnetic field or a homogeneous external strain field (from a substrate), and is likely to lead both to local strain heterogeneity within the nanocrystallites and to different tilting of octahedra within the orthorhombic structure. An additional first order transition occurs near 40 K in all samples and appears to involve some very small strain contrast between two ferromagnetic structures.

  12. Chemically induced Jahn-Teller ordering on manganite surfaces.

    PubMed

    Gai, Zheng; Lin, Wenzhi; Burton, J D; Fuchigami, K; Snijders, P C; Ward, T Z; Tsymbal, Evgeny Y; Shen, J; Jesse, Stephen; Kalinin, Sergei V; Baddorf, Arthur P

    2014-07-24

    Physical and electrochemical phenomena at the surfaces of transition metal oxides and their coupling to local functionality remains one of the enigmas of condensed matter physics. Understanding the emergent physical phenomena at surfaces requires the capability to probe the local composition, map order parameter fields and establish their coupling to electronic properties. Here we demonstrate that measuring the sub-30-pm displacements of atoms from high-symmetry positions in the atomically resolved scanning tunnelling microscopy allows the physical order parameter fields to be visualized in real space on the single-atom level. Here, this local crystallographic analysis is applied to the in-situ-grown manganite surfaces. In particular, using direct bond-angle mapping we report direct observation of structural domains on manganite surfaces, and trace their origin to surface-chemistry-induced stabilization of ordered Jahn-Teller displacements. Density functional calculations provide insight into the intriguing interplay between the various degrees of freedom now resolved on the atomic level.

  13. Emerging single-phase state in small manganite nanodisks.

    PubMed

    Shao, Jian; Liu, Hao; Zhang, Kai; Yu, Yang; Yu, Weichao; Lin, Hanxuan; Niu, Jiebin; Du, Kai; Kou, Yunfang; Wei, Wengang; Lan, Fanli; Zhu, Yinyan; Wang, Wenbin; Xiao, Jiang; Yin, Lifeng; Plummer, E W; Shen, Jian

    2016-08-16

    In complex oxides systems such as manganites, electronic phase separation (EPS), a consequence of strong electronic correlations, dictates the exotic electrical and magnetic properties of these materials. A fundamental yet unresolved issue is how EPS responds to spatial confinement; will EPS just scale with size of an object, or will the one of the phases be pinned? Understanding this behavior is critical for future oxides electronics and spintronics because scaling down of the system is unavoidable for these applications. In this work, we use La0.325Pr0.3Ca0.375MnO3 (LPCMO) single crystalline disks to study the effect of spatial confinement on EPS. The EPS state featuring coexistence of ferromagnetic metallic and charge order insulating phases appears to be the low-temperature ground state in bulk, thin films, and large disks, a previously unidentified ground state (i.e., a single ferromagnetic phase state emerges in smaller disks). The critical size is between 500 nm and 800 nm, which is similar to the characteristic length scale of EPS in the LPCMO system. The ability to create a pure ferromagnetic phase in manganite nanodisks is highly desirable for spintronic applications.

  14. Emerging single-phase state in small manganite nanodisks

    NASA Astrophysics Data System (ADS)

    Shao, Jian; Liu, Hao; Zhang, Kai; Yu, Yang; Yu, Weichao; Lin, Hanxuan; Niu, Jiebin; Du, Kai; Kou, Yunfang; Wei, Wengang; Lan, Fanli; Zhu, Yinyan; Wang, Wenbin; Xiao, Jiang; Yin, Lifeng; Plummer, E. W.; Shen, Jian

    2016-08-01

    In complex oxides systems such as manganites, electronic phase separation (EPS), a consequence of strong electronic correlations, dictates the exotic electrical and magnetic properties of these materials. A fundamental yet unresolved issue is how EPS responds to spatial confinement; will EPS just scale with size of an object, or will the one of the phases be pinned? Understanding this behavior is critical for future oxides electronics and spintronics because scaling down of the system is unavoidable for these applications. In this work, we use La0.325Pr0.3Ca0.375MnO3 (LPCMO) single crystalline disks to study the effect of spatial confinement on EPS. The EPS state featuring coexistence of ferromagnetic metallic and charge order insulating phases appears to be the low-temperature ground state in bulk, thin films, and large disks, a previously unidentified ground state (i.e., a single ferromagnetic phase state emerges in smaller disks). The critical size is between 500 nm and 800 nm, which is similar to the characteristic length scale of EPS in the LPCMO system. The ability to create a pure ferromagnetic phase in manganite nanodisks is highly desirable for spintronic applications.

  15. Thickness dependence of the exchange bias in epitaxial manganite bilayers

    NASA Astrophysics Data System (ADS)

    Kobrinskii, Alexey; Varela, Maria; Goldman, Allen

    2008-03-01

    A series of thin ferromagnetic/antiferromagnetic (F/AF) bilayers of doped lanthanum manganites La2/3Ca1/3MnO3 (F) and La1/3Ca2/3MnO3 (AF) have been grown by ozone-assisted molecular beam epitaxy (OAMBE). The lattice of the substrate material (001) SrTiO3 is a good match to that of the manganites. Growth by the OAMBE method results in samples with sharp interfaces, which are suitable systems to study the interfacial phenomenon of exchange bias (EB). We present STEM and high-resolution X-ray diffraction data that verify the high structural quality of the samples. We have studied EB as a function of the AF layer thickness and determined two critical values of the thickness for the onset and for the saturation of the hysteresis loop shift which is traditionally used to measure the effect. The observed dependence of EB on the AF layer thickness can be described within the original or generalized Meiklejohn-Bean model. Using this simple approach we have estimated the interfacial coupling energy and the antiferromagnetic anisotropy constant.

  16. Spatial anisotropy of topological domain structure in hexagonal manganites

    NASA Astrophysics Data System (ADS)

    Yang, K. L.; Zhang, Y.; Zheng, S. H.; Lin, L.; Yan, Z. B.; Liu, J.-M.; Cheong, S.-W.

    2017-01-01

    The domain structure of hexagonal manganites is simulated based on the phenomenological Ginzburg-Landau theory, and special attention is paid to the evolution of a topological vortex-antivortex pattern with the varying out-of-plane anisotropies of two stiffness parameters for the in-plane (x y -plane) trimerization amplitude Q and out-of-plane (z -axis) polarization P . It is revealed that the topological domain structure can be remarkably modulated by the stiffness anisotropies. A larger stiffness for Q along the z axis causes the trajectory lines of the vortex nodes and antivortex nodes to be seriously stretched along the z axis, eventually leading to the topological stripelike domain pattern. The larger stiffness for either Q or P along the z axis makes the domain walls perpendicular to the z axis wider, while the domain walls parallel to the z axis remain less affected. The present work suggests that the topological domain structure may be controlled by some approaches (e.g., lattice strain) which can change the trimerization stiffness and polarization stiffness in hexagonal manganites.

  17. Emerging single-phase state in small manganite nanodisks

    PubMed Central

    Shao, Jian; Liu, Hao; Zhang, Kai; Yu, Yang; Yu, Weichao; Lin, Hanxuan; Niu, Jiebin; Du, Kai; Kou, Yunfang; Wei, Wengang; Lan, Fanli; Zhu, Yinyan; Wang, Wenbin; Xiao, Jiang; Yin, Lifeng; Plummer, E. W.; Shen, Jian

    2016-01-01

    In complex oxides systems such as manganites, electronic phase separation (EPS), a consequence of strong electronic correlations, dictates the exotic electrical and magnetic properties of these materials. A fundamental yet unresolved issue is how EPS responds to spatial confinement; will EPS just scale with size of an object, or will the one of the phases be pinned? Understanding this behavior is critical for future oxides electronics and spintronics because scaling down of the system is unavoidable for these applications. In this work, we use La0.325Pr0.3Ca0.375MnO3 (LPCMO) single crystalline disks to study the effect of spatial confinement on EPS. The EPS state featuring coexistence of ferromagnetic metallic and charge order insulating phases appears to be the low-temperature ground state in bulk, thin films, and large disks, a previously unidentified ground state (i.e., a single ferromagnetic phase state emerges in smaller disks). The critical size is between 500 nm and 800 nm, which is similar to the characteristic length scale of EPS in the LPCMO system. The ability to create a pure ferromagnetic phase in manganite nanodisks is highly desirable for spintronic applications. PMID:27482108

  18. Strain-induced incommensurate phases in hexagonal manganites

    NASA Astrophysics Data System (ADS)

    Xue, Fei; Wang, Xueyun; Shi, Yin; Cheong, Sang-Wook; Chen, Long-Qing

    2017-09-01

    An incommensurate phase refers to a solid state in which the period of a superstructure is incommensurable with its primitive unit cell. It was recently shown that an incommensurate phase, which displays a single chiral modulation of six domain variants, could be induced by applying an in-plane strain to a hexagonal manganite. Here we combine Landau theory description of thermodynamics and the phase-field method to investigate and understand the formation of the incommensurate phase in hexagonal manganites. It is shown that the equilibrium wavelength of the incommensurate phase is determined by both the temperature and the magnitude of the applied strain, and a temperature-strain phase diagram is constructed for graphically displaying the temperature and strain conditions for the stability of the incommensurate phase. Temporal evolution of domain structures reveals that the applied strain not only produces the force pulling the vortices and antivortices in opposite directions, but also results in the creation and annihilation of vortex-antivortex pairs.

  19. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  20. Giant magnetoresistance in organic spin valves

    SciTech Connect

    Sun, Da-Li; Yin, Lifeng; Sun, Chengjun; Guo, Hangwen; Gai, Zheng; Zhang, Xiaoguang; Ward, Thomas Z; Cheng, Zhaohua; Shen, Jian

    2010-01-01

    Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to {approx}300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

  1. Giant magnetoresistance in bilayer graphene nanoflakes

    NASA Astrophysics Data System (ADS)

    Farghadan, Rouhollah; Farekiyan, Marzieh

    2016-09-01

    Coherent spin transport through bilayer graphene (BLG) nanoflakes sandwiched between two electrodes made of single-layer zigzag graphene nanoribbon was investigated by means of Landauer-Buttiker formalism. Application of a magnetic field only on BLG structure as a channel produces a perfect spin polarization in a large energy region. Moreover, the conductance could be strongly modulated by magnetization of the zigzag edge of AB-stacked BLG, and the junction, entirely made of carbon, produces a giant magnetoresistance (GMR) up to 100%. Intestinally, GMR and spin polarization could be tuned by varying BLG width and length. Generally, MR in a AB-stacked BLG strongly increases (decreases) with length (width).

  2. Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

    SciTech Connect

    Kuru, Yener; Welzel, Udo; Mittemeijer, Eric J.

    2014-12-01

    This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

  3. Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions.

    PubMed

    Tiira, J; Strambini, E; Amado, M; Roddaro, S; San-Jose, P; Aguado, R; Bergeret, F S; Ercolani, D; Sorba, L; Giazotto, F

    2017-04-12

    The Josephson effect is a fundamental quantum phenomenon where a dissipationless supercurrent is introduced in a weak link between two superconducting electrodes by Andreev reflections. The physical details and topology of the junction drastically modify the properties of the supercurrent and a strong enhancement of the critical supercurrent is expected to occur when the topology of the junction allows an emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be described by any known conventional phenomenon of Josephson junctions. We consider these results in the context of topological superconductivity, and show that the observed critical supercurrent enhancement is compatible with a magnetic field-induced topological transition.

  4. Colossal aggregations of giant alien freshwater fish as a potential biogeochemical hotspot.

    PubMed

    Boulêtreau, Stéphanie; Cucherousset, Julien; Villéger, Sébastien; Masson, Rémi; Santoul, Frédéric

    2011-01-01

    The ubiquity and fascinating nature of animal aggregations are widely recognised. We report here consistent and previously undocumented occurences of aggregations of a giant alien freshwater fish, the Wels catfish (Silurus glanis). Aggregative groups were on average composed of 25 (± 10 SD, ranging from 15 to 44) adults with estimated average total biomass of 651 kg (386 - 1132) and biomass density of 23 kg m(-2) (14 - 40). Aggregations always occurred within the same location. No foraging, reproductive or anti-predator behaviour were observed during the aggregations. A mass-balance model estimated that these colossal aggregations of an alien species can locally release, through excretion only, up to 70 mg P m(-2) h(-1) and 400 mg N m(-2) h(-1), potentially representing the highest biogeochemical hotspots reported in freshwater ecosystems and another unexpected ecological effect of alien species.

  5. Crystalline Structure, Defect Chemistry and Room Temperature Colossal Permittivity of Nd-doped Barium Titanate.

    PubMed

    Sun, Qiaomei; Gu, Qilin; Zhu, Kongjun; Jin, Rongying; Liu, Jinsong; Wang, Jing; Qiu, Jinhao

    2017-02-13

    Dielectric materials with high permittivity are strongly demanded for various technological applications. While polarization inherently exists in ferroelectric barium titanate (BaTiO3), its high permittivity can only be achieved by chemical and/or structural modification. Here, we report the room-temperature colossal permittivity (~760,000) obtained in xNd: BaTiO3 (x = 0.5 mol%) ceramics derived from the counterpart nanoparticles followed by conventional pressureless sintering process. Through the systematic analysis of chemical composition, crystalline structure and defect chemistry, the substitution mechanism involving the occupation of Nd(3+) in Ba(2+) -site associated with the generation of Ba vacancies and oxygen vacancies for charge compensation has been firstly demonstrated. The present study serves as a precedent and fundamental step toward further improvement of the permittivity of BaTiO3-based ceramics.

  6. Crystalline Structure, Defect Chemistry and Room Temperature Colossal Permittivity of Nd-doped Barium Titanate

    NASA Astrophysics Data System (ADS)

    Sun, Qiaomei; Gu, Qilin; Zhu, Kongjun; Jin, Rongying; Liu, Jinsong; Wang, Jing; Qiu, Jinhao

    2017-02-01

    Dielectric materials with high permittivity are strongly demanded for various technological applications. While polarization inherently exists in ferroelectric barium titanate (BaTiO3), its high permittivity can only be achieved by chemical and/or structural modification. Here, we report the room-temperature colossal permittivity (~760,000) obtained in xNd: BaTiO3 (x = 0.5 mol%) ceramics derived from the counterpart nanoparticles followed by conventional pressureless sintering process. Through the systematic analysis of chemical composition, crystalline structure and defect chemistry, the substitution mechanism involving the occupation of Nd3+ in Ba2+ -site associated with the generation of Ba vacancies and oxygen vacancies for charge compensation has been firstly demonstrated. The present study serves as a precedent and fundamental step toward further improvement of the permittivity of BaTiO3-based ceramics.

  7. Colossal dielectric constant and relaxation behaviors in Pr:SrTiO{sub 3} ceramics

    SciTech Connect

    Liu Cheng; Liu Peng; Zhou Jianping; Su Lina; Cao Lei; He Ying; Zhang Huaiwu

    2010-05-15

    Sr{sub 1-x}Pr{sub x}TiO{sub 3} ceramics (0.00{<=}x{<=}0.03) were prepared by a traditional solid-state reaction method. Two relaxation processes (marked as A and B) of the Sr{sub 0.09}Pr{sub 0.01}TiO{sub 3} ceramics were investigated by analyzing the E{sub a} values obtained from the Arrhenius law. Colossal dielectric constant (CDC) was first obtained in Sr{sub 0.09}Pr{sub 0.01}TiO{sub 3} ceramics, whose permittivity was up to 3000 (1 kHz, room temperature), greater than that of pure SrTiO{sub 3} ceramics and samples with more Pr addition (x=0.02 and 0.03). This CDC behavior was related to the internal barrier layer capacitance mechanism.

  8. Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions

    PubMed Central

    Tiira, J.; Strambini, E.; Amado, M.; Roddaro, S.; San-Jose, P.; Aguado, R.; Bergeret, F. S.; Ercolani, D.; Sorba, L.; Giazotto, F.

    2017-01-01

    The Josephson effect is a fundamental quantum phenomenon where a dissipationless supercurrent is introduced in a weak link between two superconducting electrodes by Andreev reflections. The physical details and topology of the junction drastically modify the properties of the supercurrent and a strong enhancement of the critical supercurrent is expected to occur when the topology of the junction allows an emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be described by any known conventional phenomenon of Josephson junctions. We consider these results in the context of topological superconductivity, and show that the observed critical supercurrent enhancement is compatible with a magnetic field-induced topological transition. PMID:28401951

  9. Crystalline Structure, Defect Chemistry and Room Temperature Colossal Permittivity of Nd-doped Barium Titanate

    PubMed Central

    Sun, Qiaomei; Gu, Qilin; Zhu, Kongjun; Jin, Rongying; Liu, Jinsong; Wang, Jing; Qiu, Jinhao

    2017-01-01

    Dielectric materials with high permittivity are strongly demanded for various technological applications. While polarization inherently exists in ferroelectric barium titanate (BaTiO3), its high permittivity can only be achieved by chemical and/or structural modification. Here, we report the room-temperature colossal permittivity (~760,000) obtained in xNd: BaTiO3 (x = 0.5 mol%) ceramics derived from the counterpart nanoparticles followed by conventional pressureless sintering process. Through the systematic analysis of chemical composition, crystalline structure and defect chemistry, the substitution mechanism involving the occupation of Nd3+ in Ba2+ -site associated with the generation of Ba vacancies and oxygen vacancies for charge compensation has been firstly demonstrated. The present study serves as a precedent and fundamental step toward further improvement of the permittivity of BaTiO3-based ceramics. PMID:28205559

  10. Colossal Aggregations of Giant Alien Freshwater Fish as a Potential Biogeochemical Hotspot

    PubMed Central

    Boulêtreau, Stéphanie; Cucherousset, Julien; Villéger, Sébastien; Masson, Rémi; Santoul, Frédéric

    2011-01-01

    The ubiquity and fascinating nature of animal aggregations are widely recognised. We report here consistent and previously undocumented occurences of aggregations of a giant alien freshwater fish, the Wels catfish (Silurus glanis). Aggregative groups were on average composed of 25 (±10 SD, ranging from 15 to 44) adults with estimated average total biomass of 651 kg (386 – 1132) and biomass density of 23 kg m−2 (14 – 40). Aggregations always occurred within the same location. No foraging, reproductive or anti-predator behaviour were observed during the aggregations. A mass-balance model estimated that these colossal aggregations of an alien species can locally release, through excretion only, up to 70 mg P m−2 h−1 and 400 mg N m−2 h−1, potentially representing the highest biogeochemical hotspots reported in freshwater ecosystems and another unexpected ecological effect of alien species. PMID:21998687

  11. Dielectric Properties of Tungsten Copper Barium Ceramic as Promising Colossal-Permittivity Material

    NASA Astrophysics Data System (ADS)

    Wang, Juanjuan; Chao, Xiaolian; Li, Guangzhao; Feng, Lajun; Zhao, Kang; Ning, Tiantian

    2017-08-01

    Ba(Cu0.5W0.5)O3 (BCW) ceramic has been fabricated and its dielectric properties investigated for use in energy-storage applications, revealing a very large dielectric constant (˜104) at 1 kHz. Moreover, the colossal-permittivity BCW ceramic exhibited fine microstructure and optimal temperature stability over a wide temperature range from room temperature to 500°C. The internal barrier layer capacitor mechanism was considered to be responsible for its high dielectric properties. Based on activation values, it is concluded that doubly ionized oxygen vacancies make a substantial contribution to the conduction and relaxation behaviors at grain boundaries. This study suggests that this kind of material has potential for use in high-density energy storage applications.

  12. Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions

    NASA Astrophysics Data System (ADS)

    Tiira, J.; Strambini, E.; Amado, M.; Roddaro, S.; San-Jose, P.; Aguado, R.; Bergeret, F. S.; Ercolani, D.; Sorba, L.; Giazotto, F.

    2017-04-01

    The Josephson effect is a fundamental quantum phenomenon where a dissipationless supercurrent is introduced in a weak link between two superconducting electrodes by Andreev reflections. The physical details and topology of the junction drastically modify the properties of the supercurrent and a strong enhancement of the critical supercurrent is expected to occur when the topology of the junction allows an emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be described by any known conventional phenomenon of Josephson junctions. We consider these results in the context of topological superconductivity, and show that the observed critical supercurrent enhancement is compatible with a magnetic field-induced topological transition.

  13. Influence of magnetic field on electric-field-induced local polar states in manganites

    SciTech Connect

    Mamin, R. F.; Strle, J.; Kabanov, V. V.; Kranjec, A.; Borovsak, M.; Mihailovic, D.; Bizyaev, D. A.; Yusupov, R. V.; Bukharaev, A. A.

    2015-11-09

    It is shown that creation of local charged states at the surface of the lanthanum-strontium manganite single crystals by means of bias application via a conducting atomic force microscope tip is strongly affected by magnetic field. Both a charge and a size of created structures increase significantly on application of the magnetic field during the induction. We argue that the observed phenomenon originates from a known tendency of manganites toward charge segregation and its intimate relation to magnetic ordering.

  14. Combined effect of bond and potential disorder in half-doped manganites.

    PubMed

    Kumar, Sanjeev; Kampf, Arno P

    2008-02-22

    We analyze the effects of both bond and potential disorder in the vicinity of a first-order metal insulator transition in a two-band model for manganites using a real-space Monte Carlo method. Our results reveal a novel charge-ordered state coexisting with spin-glass behavior. We provide the basis for understanding the phase diagrams of half-doped manganites, and contrast the effects of bond and potential disorder and the combination of both.

  15. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    SciTech Connect

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L. Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  16. Linearization strategies for high sensitivity magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Silva, Ana V.; Leitao, Diana C.; Valadeiro, João; Amaral, José; Freitas, Paulo P.; Cardoso, Susana

    2015-10-01

    Ultrasensitive magnetic field sensors envisaged for applications on biomedical imaging require the detection of low-intensity and low-frequency signals. Therefore linear magnetic sensors with enhanced sensitivity low noise levels and improved field detection at low operating frequencies are necessary. Suitable devices can be designed using magnetoresistive sensors, with room temperature operation, adjustable detected field range, CMOS compatibility and cost-effective production. The advent of spintronics set the path to the technological revolution boosted by the storage industry, in particular by the development of read heads using magnetoresistive devices. New multilayered structures were engineered to yield devices with linear output. We present a detailed study of the key factors influencing MR sensor performance (materials, geometries and layout strategies) with focus on different linearization strategies available. Furthermore strategies to improve sensor detection levels are also addressed with best reported values of ˜40 pT/√Hz at 30 Hz, representing a step forward the low field detection at room temperature.

  17. Magnetoresistive Flux Focusing Eddy Current Flaw Detection

    NASA Technical Reports Server (NTRS)

    Wincheski, Russell A. (Inventor); Namkung, Min (Inventor); Simpson, John W. (Inventor)

    2005-01-01

    A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil s longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multi-layer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

  18. Magnetoresistive flux focusing eddy current flaw detection

    NASA Technical Reports Server (NTRS)

    Wincheski, Russell A. (Inventor); Namkung, Min (Inventor); Simpson, John W. (Inventor)

    2005-01-01

    A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil's longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multilayer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

  19. Advanced giant magnetoresistance technology for measurement applications

    NASA Astrophysics Data System (ADS)

    Weiss, Roland; Mattheis, Roland; Reiss, Günter

    2013-08-01

    Giant magnetoresistance (GMR) sensors are considered one of the first real applications of nanotechnology. They consist of nm-thick layered structures where ferromagnetic metals are sandwiched by nonmagnetic metals. Such multilayered films produce a large change in resistance (typically 10 to 20%) when subjected to a magnetic field, compared with a maximum change of a few per cent for other types of magnetic sensors. This technology has been intensively used in read heads for hard disk drives and now increasingly finds applications due to the high sensitivity and signal-to-noise ratio. Additionally these sensors are compatible with miniaturization and thus offer a high spatial resolution combined with a frequency range up to the 100 MHz regime and simple electronic conditioning. In this review, we first discuss the basics of the underlying magnetoresistance effects in layered structures and then present three prominent examples for future applications: in the field of current sensing the new GMR sensors offer high bandwidth and good accuracy in a space-saving open loop measurement configuration. In rotating systems they can be used for multiturn angle measurements, and in biotechnology the detection of magnetic particles enables the quantitative measurement of biomolecule concentrations.

  20. Nonlocal Magnetoresistance Mediated by Spin Superfluidity.

    PubMed

    Takei, So; Tserkovnyak, Yaroslav

    2015-10-09

    The electrical response of two diffusive metals is studied when they are linked by a magnetic insulator hosting a topologically stable (superfluid) spin current. We discuss how charge currents in the metals induce a spin supercurrent state, which in turn generates a magnetoresistance that depends on the topology of the electrical circuit. This magnetoresistance relies on phase coherence over the entire magnet and gives direct evidence for spin superfluidity. We show that driving the magnet with an ac current allows coherent spin transport even in the presence of U(1)-breaking magnetic anisotropy that can preclude dc superfluid transport. Spin transmission in the ac regime shows a series of resonance peaks as a function of frequency. The peak locations, heights, and widths can be used to extract static interfacial properties, e.g., the spin-mixing conductance and effective spin Hall angle, and to probe dynamic properties such as the spin-wave dispersion. Thus, ac transport may provide a simpler route to realizing nonequilbrium coherent spin transport and a useful way to characterize the magnetic system, serving as a precursor to the realization of dc superfluid spin transport.

  1. Non-local magnetoresistance in YIG/Pt nanostructures

    SciTech Connect

    Goennenwein, Sebastian T. B. Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans; Schlitz, Richard; Ganzhorn, Kathrin; Althammer, Matthias

    2015-10-26

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.

  2. Nanotesla magnetoresistance in π-conjugated polymer devices

    NASA Astrophysics Data System (ADS)

    Klemm, Philippe; Bange, Sebastian; Pöllmann, Agnes; Boehme, Christoph; Lupton, John M.

    2017-06-01

    We demonstrate submicrotesla sensitivity of organic magnetoresistance in thin-film diodes made of the conducting polymer poly(styrene sulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS). The magnetoresistance sensitivity is shown to be better than 20 parts per billion (ppb). As for other conjugated polymers, magnetoresistance can be separated into two regimes of field strength: the nonmonotonic ultrasmall magnetic field effect on magnetic field scales below 2 mT, and the monotonic intermediate magnetic field effect on scales over several tens of mT. The former gives the PEDOT:PSS magnetoresistance curve a characteristic W-shaped functionality, with inverted turning points compared to those found in conventional organic light-emitting diode (OLED) devices. We succeed in resolving the ultrasmall magnetic field effect of the PEDOT:PSS layer incorporated within an OLED structure, which is responsible for an additional magnetoresistive feature on the ppm scale. Such a device shows unprecedented complexity in magnetoresistance with a total of four extrema within a field range of ±1 mT. We propose that these unique characteristics arise from spin-spin interactions in the weakly bound carrier pairs responsible for the spin-dependent recombination probed in magnetoresistance.

  3. Comparative Study of Magnetic Ordering and Electrical Transport in Bulk and Nano-Grained Nd0.67Sr0.33MnO3 Manganites

    NASA Astrophysics Data System (ADS)

    Arun, B.; Suneesh, M. V.; Vasundhara, M.

    2016-11-01

    We have prepared bulk and nano-sized Nd0.67Sr0.33MnO3 manganites by solid state and low-temperature mild solgel methods respectively. Both the compounds crystallized into an orthorhombic structure with Pbnm space group confirmed from Rietveld refinement of X-ray powder diffraction patterns. Nano-grained compound shows an average particle size of 22 nm with broad grain size distribution revealed from the Transmission electron micrographs. It appeared that the long range ferromagnetic order becomes unstable upon the reduction of the samples dimension down to nano meter scale. DC magnetization and AC susceptibility results showed frustration of spins in nano-grained compound and thereby it could lead to a cluster glass-like behaviour. Temperature dependence of electrical resistivity under different magnetic fields shows the broad maxima at higher temperatures and a low temperature upturn in both the compounds, however, the latter is more prominent in the nano grained compound. Combination of Kondo effect with electron and phonon interactions govern the low temperature resistivity and a small polaron hopping mechanism dominates at high temperatures for both the compounds. The magnetoresistance is understood by the effect of spin polarized tunneling through the grain boundary. The experimental results revealed that the reduction in particle size influences severely on the magnetic, electrical and magneto transport properties.

  4. Charge, orbital and spin ordering phenomena in the mixed valence manganite (NaMn3+3)(Mn3+2Mn4+2)O12

    NASA Astrophysics Data System (ADS)

    Prodi, A.; Gilioli, E.; Gauzzi, A.; Licci, F.; Marezio, M.; Bolzoni, F.; Huang, Q.; Santoro, A.; Lynn, J. W.

    2004-01-01

    Mixed-valence manganites with the ABO3 perovskite structure display a variety of magnetic and structural transitions, dramatic changes of electrical conductivity and magnetoresistance effects. The physical properties vary with the relative concentration of Mn3+ and Mn4+ in the octahedral corner-sharing network, and the proportion of these two cations is usually changed by doping the trivalent large A cation (for example, La3+) with divalent cations. As the dopant and the original cation have, in general, different sizes, and as they are distributed randomly in the structure, such systems are characterized by local distortions that make it difficult to obtain direct information about their crystallographic and physical properties. On the other hand, the double oxides of formula AA'3Mn4O12 contain a perovskite-like network of oxygen octahedra centred on the Mn cations, coupled with an ordered arrangement of the A and A' cations, whose valences control the proportion of Mn3+ and Mn4+ in the structure. The compound investigated in this work, (NaMn3+3)(Mn3+2Mn4+2)O12, contains an equal number of Mn3+ and Mn4+ in the octahedral sites. We show that the absence of disorder enables the unambiguous determination of symmetry, the direct observation of full, or nearly full, charge ordering of Mn3+ and Mn4+ in distinct crystallographic sites, and a nearly perfect orbital ordering of the Mn3+ octahedra.

  5. Spin polarization and transport in the manganite La0.85Te0.15Mn0.9Cu0.1O3

    NASA Astrophysics Data System (ADS)

    Ang, R.; Sun, Y. P.; Yang, J.; Zhu, X. B.; Song, W. H.

    2006-11-01

    The resistivity ρ(T), and thermoelectric power (TEP) S(T,H) in the manganite La0.85Te0.15Mn0.9Cu0.1O3 have been investigated systematically in the absence and presence of magnetic fields. A large negative magnetoresistance (MR) appears up to 5 T. In addition, S(T) of the sample shows an anomalous peak, which is suggested to be related to the contribution of phonon drag. Particularly, the thermally induced and the field-induced sign change of S below the Curie temperature T is observed, implying the importance of spin polarization. In terms of the change of electronic structure, the orbital degree of freedom of the e carriers can be responsible for the effective lifting of the degenerate e band. Additionally, based on the fitting results of ρ(T) and S(T), the transport mechanism for the sample in the paramagnetic (PM) insulting region and low-temperature ferromagnetic (FM) insulating region below T is suggested to be dominated by variable-range-hopping (VRH) conduction. However, in the intermediate-temperature FM metallic region below T, the transport mechanism is considered to be dominated mainly electron magnon scattering.

  6. Charge transport mechanisms in sol-gel grown La0.7Pb0.3MnO3/LaAlO3 manganite films.

    PubMed

    Vaghela, Eesh; Keshvani, M J; Gadani, Keval; Joshi, Zalak; Boricha, Hetal; Asokan, K; Venkateshwarlu, D; Ganesan, V; Shah, N A; Solanki, P S

    2017-02-15

    In this communication, structural, microstructural, transport and magnetotransport properties are reported for La0.7Pb0.3MnO3/LaAlO3 (LPMO/LAO) manganite films having different thicknesses. All the films were irradiated with 200 MeV Ag(+15) swift heavy ions (SHI). Films were grown using the sol-gel method by employing the acetate precursor route. Structural measurements were carried out using the X-ray diffraction (XRD) method at room temperature, while atomic force microscopy (AFM) was performed for the surface morphology. Temperature dependent resistivity under different applied magnetic fields for all the films shows metal to insulator transition at temperature TP. In addition to the metal to insulator transition at TP, the films also exhibit low temperature resistivity upturn behavior. Resistivity, TP and upturn behavior are highly influenced by the film thickness, applied magnetic field and irradiation. To understand the nature of charge transport for the low temperature resistivity behavior and metallic and insulating (semiconducting) regions, various models and mechanisms have been verified and the most suitable mechanism has been found for each region in the resistivity curves. Magnetoresistance (MR) is affected by temperature, film thickness and irradiation. MR behavior has been understood in terms of combined and separate contributions from grains and grain boundaries in the films.

  7. Study of magnetic ordering in the perovskite manganites Pr0.6Sr0.4CrxMn1-xO3

    NASA Astrophysics Data System (ADS)

    Ge, X. S.; Wu, L. Q.; Li, S. Q.; Li, Z. Z.; Tang, G. D.; Qi, W. H.; Zhou, H. J.; Xue, L. C.; Ding, L. L.

    2017-04-01

    Powder samples of the ABO3 perovskite manganites Pr0.6Sr0.4CrxMn1-xO3 (0.00≤x≤0.30) were synthesized using the sol-gel method. X-ray diffraction analyses showed that all the samples had a single-phase orthorhombic structure. By analyzing magnetic parameters on the basis of the O2p itinerant electron model, we found that there are two magnetic transition temperatures, TCM and TCP, corresponding to changes in the magnetic ordering for the Mn and Pr cations, respectively. The magnetic moments of Mn3+ and Cr3+ cations within the B sublattice show canted ferromagnetic coupling, and the magnetic moments of the Pr cations within the A sublattice also show canted ferromagnetic coupling. However, the total magnetic moment of the A sublattice shows antiferromagnetic coupling against that of the B sublattice. The assumption of the canted ferromagnetic coupling within the B sublattice was confirmed using magnetoresistance experimental results.

  8. Charge, orbital and spin ordering phenomena in the mixed valence manganite (NaMn3+(3))(Mn3+(2)Mn4+(2))O12.

    PubMed

    Prodi, A; Gilioli, E; Gauzzi, A; Licci, F; Marezio, M; Bolzoni, F; Huang, Q; Santoro, A; Lynn, J W

    2004-01-01

    Mixed-valence manganites with the ABO3 perovskite structure display a variety of magnetic and structural transitions, dramatic changes of electrical conductivity and magnetoresistance effects. The physical properties vary with the relative concentration of Mn3+ and Mn4+ in the octahedral corner-sharing network, and the proportion of these two cations is usually changed by doping the trivalent large A cation (for example, La3+) with divalent cations. As the dopant and the original cation have, in general, different sizes, and as they are distributed randomly in the structure, such systems are characterized by local distortions that make it difficult to obtain direct information about their crystallographic and physical properties. On the other hand, the double oxides of formula AA'3Mn4O12 contain a perovskite-like network of oxygen octahedra centred on the Mn cations, coupled with an ordered arrangement of the A and A' cations, whose valences control the proportion of Mn3+ and Mn4+ in the structure. The compound investigated in this work, (NaMn3+(3))(Mn3+(2)Mn4+(2))O12, contains an equal number of Mn3+ and Mn4+ in the octahedral sites. We show that the absence of disorder enables the unambiguous determination of symmetry, the direct observation of full, or nearly full, charge ordering of Mn3+ and Mn4+ in distinct crystallographic sites, and a nearly perfect orbital ordering of the Mn3+ octahedra.

  9. Spin-tunneling magnetoresistive elements based on multilayered nanostructures

    NASA Astrophysics Data System (ADS)

    Amelichev, V. V.; Belyakov, P. A.; Vasil'ev, D. V.; Zhukov, D. A.; Kazakov, Yu. V.; Kostyuk, D. V.; Orlov, E. P.; Kasatkin, S. I.; Krikunov, A. I.

    2017-08-01

    The results of studies of characteristics of spin-tunneling magnetoresistive (STMR) elements fabricated from multilayered nanostructures using a mask technique have been considered. The parameters of magnetic annealing of STMR elements have experimentally been obtained. The results of these experiments have shown that a magnitude of the magnetoresistive effect can increase by four to five or more times. The test samples of STMR elements, which have a magnitude of the giant magnetoresistive effect up to 50% and a resistance of 30-35 kΩ, have been studied in the absence of a magnetic field.

  10. Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes

    NASA Astrophysics Data System (ADS)

    Luo, Xin; Fang, Chi; Wan, Caihua; Cai, Jialin; Liu, Yong; Han, Xiufeng; Lu, Zhihong; Shi, Wenhua; Xiong, Rui; Zeng, Zhongming

    2017-04-01

    This article reports the characterization of WTe2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe2 thin films.

  11. Using magnetoresistance to probe reversal asymmetry in exchange biased bilayers

    SciTech Connect

    Leighton, C.; Song, M.; Nogues, J.; Cyrille, M. C.; Schuller, Ivan K.

    2000-07-01

    We have measured the anisotropic magnetoresistance of Fe films exchange coupled to antiferromagnetic MnF{sub 2} layers. Exchange bias and coercivity obtained from magnetoresistance are in close agreement with superconducting quantum interference device magnetometry data. In addition the magnetoresistance reveals an asymmetry in the magnetization reversal process, despite the fact that the magnetization hysteresis loops show little shape asymmetry. These results correlate well with an earlier study of magnetization reversal asymmetry by polarized neutron reflectometry. The data imply that the magnetization reverses by coherent rotation on one side of the loop and by nucleation and propagation of domain walls on the other. (c) 2000 American Institute of Physics.

  12. Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

    NASA Astrophysics Data System (ADS)

    Heera, V.; Fiedler, J.; Skorupa, W.

    2016-10-01

    We report on large negative and positive magnetoresistance in inhomogeneous, insulating Si:Ga films below a critical temperature of about 7 K. The magnetoresistance effect exceeds 300 % at temperatures below 3 K and fields of 8 T. The comparison of the transport properties of superconducting samples with that of insulating ones reveals that the large magnetoresistance is associated with the appearance of local superconductivity. A simple phenomenological model based on localized Cooper pairs and hopping quasiparticles is able to describe the temperature and magnetic field dependence of the sheet resistance of such films.

  13. Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes.

    PubMed

    Luo, Xin; Fang, Chi; Wan, Caihua; Cai, Jialin; Liu, Yong; Han, Xiufeng; Lu, Zhihong; Shi, Wenhua; Xiong, Rui; Zeng, Zhongming

    2017-04-07

    This article reports the characterization of WTe2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe2 thin films.

  14. Ultra-sharp oscillatory magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

    SciTech Connect

    Alagoz, H. S. Jeon, J.; Boos, R.; Ahangharnejhad, R. H.; Chow, K. H. Jung, J.

    2014-10-20

    Our investigations of magneto-transport properties of La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} manganite thin films of reduced dimensions revealed dramatic changes in R(θ), the dependence of resistivity on the angle between the magnetic field direction and the current direction, and consequently in the anisotropic magneto-resistance. A regular oscillatory  sin{sup 2}θ form of R(θ) is replaced by a very sharp rectangular-shaped ones when the dimensions of the system become comparable to the size of the intrinsic electronic domains. We discuss possible mechanisms that could be responsible for these changes.

  15. Recovery of oscillatory magneto-resistance in phase separated La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

    SciTech Connect

    Alagoz, H. S. Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H. Jung, J.; Prasad, B.; Egilmez, M.

    2013-12-02

    In-plane angular dependent magneto-resistance has been studied in La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) manganite thin films deposited on the (100) oriented NdGaO{sub 3}, and (001) oriented SrTiO{sub 3} and LaAlO{sub 3} substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ρ attains a large time dependent value. The ρ decreases sharply with an increasing angle θ between the magnetic field and the current, and does not display an expected oscillatory cos{sup 2}θ/sin{sup 2}θ dependence for all films. The regular oscillations are recovered during repetitive sweeping of θ between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity.

  16. Surface-stabilized nonferromagnetic ordering of a layered ferromagnetic manganite.

    PubMed

    Nascimento, V B; Freeland, J W; Saniz, R; Moore, R G; Mazur, D; Liu, H; Pan, M H; Rundgren, J; Gray, K E; Rosenberg, R A; Zheng, H; Mitchell, J F; Freeman, A J; Veltruska, K; Plummer, E W

    2009-11-27

    An outstanding question regarding the probing or possible device applications of correlated electronic materials (CEMs) with layered structure is the extent to which their bulk and surface properties differ or not. The broken translational symmetry at the surface can lead to distinct functionality due to the charge, lattice, orbital, and spin coupling. Here we report on the case of bilayered manganites with hole doping levels corresponding to bulk ferromagnetic order. We find that, although the hole doping level is measured to be the same as in the bulk, the surface layer is not ferromagnetic. Further, our low-energy electron diffraction and x-ray measurements show that there is a c-axis collapse in the outermost layer. Bulk theoretical calculations reveal that, even at fixed doping level, the relaxation of the Jahn-Teller distortion at the surface is consistent with the stabilization of an A-type antiferromagnetic state.

  17. Transport and magnetic properties of CMR manganites with antidot arrays

    NASA Astrophysics Data System (ADS)

    Zhang, Kai; Du, Kai; Niu, Jiebin; Wei, Wengang; Chen, Jinjie; Yin, Lifeng; Shen, Jian

    2014-03-01

    We fabricated and characterized a series of manganites thin film samples with different densities of antidots. With increasing antidot density, the samples show higher MIT temperature and lower resistivity under zero and low magnetic fields. These differences become smaller and finally vanished when the magnetic field is large enough to melt the charge ordered phase in the system, which is expected in our theoretical explanations. We believe that emerging edge states at the ring of antidotes play a significant role for observed metal-insulator transition and electrical transport properties, which are of great importance of real storage and sensor device design. Magnetic property measurements and theoretical simulation also support the conclusion. These results open up new ways to control and tune the strongly correlated oxides without introduce any new material or field.

  18. Spin and Lattice excitations in Ferromagnetic Insulating Manganites

    NASA Astrophysics Data System (ADS)

    Mesa, Dalgis; Zhang, Jiandi; Fernandez-Baca, Jaime; Ye, Feng; Hagen, Mark; Tomioka, T.; Tokura, Yoshinori

    2011-03-01

    Though double-exchange interaction has been recognized as a major driving force for the couple magnetic and electronic phase transition, the nature of insulating ground state with ferromagnetic ordering in low-doping manganites is still not fully understood. Here we report on an inelastic neutron scattering study of spin and lattice excitations in the ferromagnetic insulating (FMI) phase of La 1-x Ca x Mn O3 with x(Ca) = 0.2. Dispersion relations for both phonons and spin waves along high-symmetry directions were obtained for temperatures of 5 and 225 K, respectively. At low temperatures, our results indicate an anomalous softening and broadening of the magnons near the zone boundary, especially when the magnon energy E ~ 20 meV, where a longitudinal optical phonon is present. Additional phonon and magnon branches observed will also be discussed. Acknowledgement: NSF DMR1005562.

  19. Asymmetric electroresistance of cluster glass state in manganites

    SciTech Connect

    Lourembam, James; Lin, Weinan; Ding, Junfeng; Bera, Ashok; Wu, Tom

    2014-03-31

    We report the electrostatic modulation of transport in strained Pr{sub 0.65}(Ca{sub 0.75}Sr{sub 0.25}){sub 0.35}MnO{sub 3} thin films grown on SrTiO{sub 3} by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.

  20. Metallic ferromagnetism-insulating charge order transition in doped manganites

    NASA Astrophysics Data System (ADS)

    Phan, Van-Nham; Ninh, Quoc-Huy; Tran, Minh-Tien

    2016-04-01

    We show that an interplay of double exchange and impurity randomness can explain the competition between metal-ferromagnetic and insulating charge ordered states in doped manganites. The double exchange is simplified in the Ising type, whereas the randomness is modeled by the Falicov-Kimball binary distribution. The combined model is considered in a framework of dynamical mean-field theory. Using the Kubo-Greenwood formalism, the transport coefficients are explicitly expressed in terms of single-particle spectral functions. Dividing the system into two sublattices we have pointed out a direct calculation to the checkerboard charge order parameter and the magnetizations. Numerical results show us that the checkerboard charge order can settle inside the ferromagnetic state at low temperature. An insulator-metal transition is also found at the point of the checkerboard charge order-ferromagnetic transition.

  1. Structural and Oxygen Storage Properties of Hexagonal Manganites

    NASA Astrophysics Data System (ADS)

    Abughayada, Castro; Dabrowski, Bogdan; Kolesnik, Stan; Chmaissem, Omar; NIU Team

    2013-03-01

    Complex oxides exhibiting superior reversible oxygen absorption/release capacities have been generating a great deal of interest due to their critical role in the development of energy related technologies, such as oxy-fuel and chemical looping combustion. Based on our previous studies of tolerance factor, we have successfully synthesized hexagonal (P63cm) RMnO3+δ manganites (R =Dy, Ho, Y) for which we discovered a large reversible oxygen storage/release capacities (within the range of oxygen content 3.0 - 3.4) at unusually low temperatures near 300 °C which make them excellent candidates for air separation and production of high purity oxygen. Resistivity, structural, magnetic, and thermal expansion properties are correlated with the oxygen content 3 + δ for these compounds. Work supported by NIU Great Journey Assistantship.

  2. Spin Glass Behaviour in Fe-substituted LPMO Manganite

    NASA Astrophysics Data System (ADS)

    Bitla, Yugandhar; Kaul, S. N.; Barquín, L. Fernández

    2011-07-01

    Study of the nonlinear magnetic susceptibility, χnl, of La0.7Pb0.3(Mn1-xFex)O3 manganite reveals that, as in an archetypical spin glass (SG), χnl in La0.7Pb0.3Mn0.8Fe0.2O3 diverges at the SG freezing temperature, Tg = 80.0(5)K, with a critical exponent γ = 1.80(5) and satisfies the static and dynamic scaling equations of state with the order-parameter critical exponent β = 0.56(4) and the dynamic critical exponent zνξ = 10.0(5). The SG behaviour stems from the competition between the ferromagnetic double-exchange and antiferromagnetic superexchange interactions.

  3. Co-adsorption of cadmium(II) and glyphosate at the water-manganite (gamma-MnOOH) interface.

    PubMed

    Ramstedt, Madeleine; Norgren, Caroline; Shchukarev, Andrei; Sjöberg, Staffan; Persson, Per

    2005-05-15

    The co-adsorption of Cd(II) and glyphosate (N-(phosphonomethyl)glycine, PMG) at the manganite (gamma-MnOOH) surface has been studied in the pH range 6-10 at 25 degrees C and with 0.1 M Na(Cl) as ionic medium. Batch adsorption experiments, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) spectroscopy were used for the quantitative analysis and the determination of the molecular structure of the surface complexes. The adsorption of Cd(II) and PMG in the ternary Cd(II)-PMG-manganite system was compared with the adsorption in the binary Cd(II)-manganite and PMG-manganite systems. The formation of three inner sphere surface complexes was observed, a ternary Cd(II)-PMG-manganite complex, a binary Cd(II)-manganite complex and a binary PMG-manganite complex. The surface concentration of the ternary complex and the Cd(II)-manganite complex was more or less constant throughout the pH range studied. However, the surface concentration of the binary PMG-manganite complex decreased with increasing pH. The major part of the binary PMG-surface complex was protonated. The ternary surface complex displayed a type B structure (Cd(II)-PMG-manganite). The average Cd-Mn distance obtained from EXAFS (3.26 A) indicates that the binary and ternary Cd(II)-surface complexes are formed by edge-sharing of Mn and Cd octahedra on the (010) plane of the manganite crystals.

  4. Evaluation of Magnetoresistive RAM for Space Applications

    NASA Technical Reports Server (NTRS)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  5. Low field magnetoresistance of gadolinium nanowire

    SciTech Connect

    Chakravorty, Manotosh Raychaudhuri, A. K.

    2014-02-07

    We report low field (μ{sub 0}H < 0.2 T) magnetoresistance (MR) studies on a single Gd nanowire patterned from a nano-structured film (average grain size ∼ 35 nm) by focused ion beam. For comparison, we did similar MR measurements on a polycrystalline sample with large crystallographic grains (∼4 μm). It is observed that in the low field region where the MR is due to motion of magnetic domains, the MR in the large grained sample shows a close relation to the characteristic temperature dependent magnetocrystalline anisotropy including a sharp rise in MR at the spin reorientation transition at 235 K. In stark contrast, in the nanowire, the MR shows complete suppression of the above behaviours and it shows predominance of the grain boundary and spin disorder controlling the domain response.

  6. Antiferromagnetic anisotropy determination by spin Hall magnetoresistance

    NASA Astrophysics Data System (ADS)

    Wang, Hua; Hou, Dazhi; Qiu, Zhiyong; Kikkawa, Takashi; Saitoh, Eiji; Jin, Xiaofeng

    2017-08-01

    An electric method for measuring magnetic anisotropy in antiferromagnetic insulators (AFIs) is proposed. When a metallic film with strong spin-orbit interactions, e.g., platinum (Pt), is deposited on an AFI, its resistance should be affected by the direction of the AFI Néel vector due to the spin Hall magnetoresistance (SMR). Accordingly, the direction of the AFI Néel vector, which is affected by both the external magnetic field and the magnetic anisotropy, is reflected in resistance of Pt. The magnetic field angle dependence of the resistance of Pt on AFI is calculated by considering the SMR, which indicates that the antiferromagnetic anisotropy can be obtained experimentally by monitoring the Pt resistance in strong magnetic fields. Calculations are performed for realistic systems such as Pt/Cr2O3, Pt/NiO, and Pt/CoO.

  7. Giant Magnetoresistive Sensors for DNA Microarray

    PubMed Central

    Xu, Liang; Yu, Heng; Han, Shu-Jen; Osterfeld, Sebastian; White, Robert L.; Pourmand, Nader; Wang, Shan X.

    2009-01-01

    Giant magnetoresistive (GMR) sensors are developed for a DNA microarray. Compared with the conventional fluorescent sensors, GMR sensors are cheaper, more sensitive, can generate fully electronic signals, and can be easily integrated with electronics and microfluidics. The GMR sensor used in this work has a bottom spin valve structure with an MR ratio of 12%. The single-strand target DNA detected has a length of 20 bases. Assays with DNA concentrations down to 10 pM were performed, with a dynamic range of 3 logs. A double modulation technique was used in signal detection to reduce the 1/f noise in the sensor while circumventing electromagnetic interference. The logarithmic relationship between the magnetic signal and the target DNA concentration can be described by the Temkin isotherm. Furthermore, GMR sensors integrated with microfluidics has great potential of improving the sensitivity to 1 pM or below, and the total assay time can be reduced to less than 1 hour. PMID:20824116

  8. Negative Magnetoresistance in Amorphous Indium Oxide Wires

    PubMed Central

    Mitra, Sreemanta; Tewari, Girish C; Mahalu, Diana; Shahar, Dan

    2016-01-01

    We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions. PMID:27876859

  9. Negative Magnetoresistance in Amorphous Indium Oxide Wires

    NASA Astrophysics Data System (ADS)

    Mitra, Sreemanta; Tewari, Girish C.; Mahalu, Diana; Shahar, Dan

    2016-11-01

    We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions.

  10. A new class of magnetoresistive compounds ^1

    NASA Astrophysics Data System (ADS)

    Xu, R.; Husmann, A.; Rosenbaum, T. F.; Saboungi, M.-L.; Enderby, J. E.; Price, D. L.

    1997-03-01

    We have measured a significant magnetoresistance (MR) in some silver selenide and silver telluride compounds from 4.5 K up to room termperature; the composition is such that these compounds are narrow gap self-doped degenerate n-type semiconductors. Our results show no evidence of saturation up to at least 5.5 T for transverse MR and the field dependences are rather linear ^2. A comparison is being made with that of other traditional and novel materials. Studies are under way to determine the origin of this phenomenom and the physical factors which may further enhance the MR. Supported by NSF-MRSEC at Chicago and by U.S.DOE contrac W-31-109-ENG-38 at ANL. R. Xu, A. Husmann, T.F. Rosenbaum, M.-L. Saboungi, D.L. Price, J.E. Enderby, in preparation.

  11. Magnetocardiography with sensors based on giant magnetoresistance

    NASA Astrophysics Data System (ADS)

    Pannetier-Lecoeur, M.; Parkkonen, L.; Sergeeva-Chollet, N.; Polovy, H.; Fermon, C.; Fowley, C.

    2011-04-01

    Biomagnetic signals, mostly due to the electrical activity in the body, are very weak and they can only be detected by the most sensitive magnetometers, such as Superconducting Quantum Interference Devices (SQUIDs). We report here biomagnetic recordings with hybrid sensors based on Giant MagnetoResistance (GMR). We recorded magnetic signatures of the electric activity of the human heart (magnetocardiography) in healthy volunteers. The P-wave and QRS complex, known from the corresponding electric recordings, are clearly visible in the recordings after an averaging time of about 1 min. Multiple recordings at different locations over the chest yielded a dipolar magnetic field map and allowed localizing the underlying current sources. The sensitivity of the GMR-based sensors is now approaching that of SQUIDs and paves way for spin electronics devices for functional imaging of the body.

  12. Hyperfine interaction and magnetoresistance in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Sheng, Y.; Nguyen, T. D.; Veeraraghavan, G.; Mermer, Ö.; Wohlgenannt, M.; Qiu, S.; Scherf, U.

    2006-07-01

    We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. We deduce a simple fitting formula from the hyperfine Hamiltonian that relates the saturation field of the OMAR traces to the hyperfine coupling constant. We compare the fitting results to literature values for this parameter. Furthermore, we apply an excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain various magnetic-field effects in organics, to the OMAR data. Whereas this model can explain a few key aspects of the experimental data, we uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.

  13. Molecular hyperfine fields in organic magnetoresistance devices

    NASA Astrophysics Data System (ADS)

    Giro, Ronaldo; Rosselli, Flávia P.; dos Santos Carvalho, Rafael; Capaz, Rodrigo B.; Cremona, Marco; Achete, Carlos A.

    2013-03-01

    We calculate molecular hyperfine fields in organic magnetoresistance (OMAR) devices using ab initio calculations. To do so, we establish a protocol for the accurate determination of the average hyperfine field Bhf and apply it to selected molecular ions: NPB, TPD, and Alq3. Then, we make devices with precisely the same molecules and perform measurements of the OMAR effect, in order to address the role of hole-transport layer in the characteristic magnetic field B0 of OMAR. Contrary to common belief, we find that molecular hyperfine fields are not only caused by hydrogen nuclei. We also find that dipolar contributions to the hyperfine fields can be comparable to the Fermi contact contributions. However, such contributions are restricted to nuclei located in the same molecular ion as the charge carrier (intramolecular), as extramolecular contributions are negligible.

  14. Anomalous magnetoresistance in magnetized topological insulator cylinders

    SciTech Connect

    Siu, Zhuo Bin; Jalil, Mansoor B. A.

    2015-05-07

    The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |k{sub z}|. The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.

  15. Magnetoresistive smart fluid (marsonpol) and devices

    NASA Astrophysics Data System (ADS)

    Reji, John; Suresh, G.; Narayanadas, D. J.

    2003-10-01

    Magnetorheological fluid, Electrorheological fluid and ferro fluids are the smart fluids known today. These fluids are either electrically conductive or non conductive. They do not exhibit variable electrical resistance or switching behavior. Of recent interest to researchers has been the development of new types of magnetoresistive materials. Such materials can be of large practical importance, as they will change their electrical resistance in the presence of a magnetic field. However, most materials only exhibit appreciable magnetoresistance under extreme conditions, such as high magnetic fields or low temperatures. A smart fluid whose electrical resistance can be varied by several orders of magnitude under nominal level of magnetic field is reported in this paper (designated MARSONPOL). In the absence of a magnetic field the fluid is an insulator having electrical resistance in the order of 108 ohm-meter and in the presence of a magnetic field the resistance of the material reduces to less than 1 ohm-meter, at room temperature of 30°C. The sharp and reversible change in resistivity makes the material transform from an insulator to conductor, rendering properties characteristic of either state, within a fraction of a second. Fluids with such characteristics are not reported in the literature making this development a breakthrough and opening up potentials for the development of several smart devices. One such device is the magnetic field sensor probe currently under development at NPOL. A capsule of MARSONPOL forms the basic sensor element. Depending on the strength of the Magnetic field, the electrical resistivity of the capsule undergoes changes. The present paper will discuss details of the smart fluid as well as features of the magnetic field sensor.

  16. Spin-controlled negative magnetoresistance resulting from exchange interactions

    NASA Astrophysics Data System (ADS)

    Agrinskaya, N. V.; Kozub, V. I.; Mikhailin, N. Yu.; Shamshur, D. V.

    2017-04-01

    We studied conductivity of AlGaAs-GaAs quantum well structures (where centers of the wells were doped by Be) at temperatures higher than 4 K in magnetic fields up 10 T. Throughout all the temperature region considered the conductivity demonstrated activated behavior. At moderate magnetic fields 0.1 T < H < 1 T, we observed negative isotropic magnetoresistance, which was linear in magnetic field while for magnetic field normal with respect to the plane of the wells the magnetoresistance was positive at H > 2T. To the best of our knowledge, it was the first observation of linear negative magnetoresistance, which would be isotropic with respect to the direction of magnetic field. While the isotropic character of magnetoresistance apparently evidences role of spins, the existing theoretical considerations concerning spin effects in conductance fail to explain our experimental results. We believe that such a behavior can be attributed to spin effects supported by exchange interactions between localized states.

  17. Linear magnetoresistance in a topological insulator Ru2Sn3

    NASA Astrophysics Data System (ADS)

    Shiomi, Y.; Saitoh, E.

    2017-03-01

    We have studied magnetotransport properties of a topological insulator material Ru2Sn3. Bulk single crystals of Ru2Sn3 were grown by a Bi flux method. The resistivity is semiconducting at high temperatures above 160 K, while it becomes metallic below 160 K. Nonlinear field dependence of Hall resistivity in the metallic region shows conduction of multiple carriers at low temperatures. In the high-temperature semiconducting region, magnetoresistance exhibits a conventional quadratic magnetic-field dependence. In the low-temperature metallic region, however, high-field magnetoresistance is clearly linear with magnetic fields, signaling a linear dispersion in the low-temperature electronic structure. Small changes in the magnetoresistance magnitude with respect to the magnetic field angle indicate that bulk electron carriers are responsible mainly for the observed linear magnetoresistance.

  18. Effect of quantum tunneling on spin Hall magnetoresistance

    NASA Astrophysics Data System (ADS)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-01

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y3Fe5O12) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  19. Recent Developments of Magnetoresistive Sensors for Industrial Applications

    PubMed Central

    Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

    2015-01-01

    The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling). PMID:26569263

  20. High speed magneto-resistive random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1992-01-01

    A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

  1. Theory of organic magnetoresistance in disordered organic semiconductors

    NASA Astrophysics Data System (ADS)

    Harmon, Nicholas J.; Flatté, Michael E.

    2012-10-01

    The understanding of spin transport in organics has been challenged by the discovery of large magnetic field effects on properties such as conductivity and electroluminescence in a wide array of organic systems. To explain the large organic magnetoresistance (OMAR) phenomenon, we present and solve a model for magnetoresistance in positionally disordered organic materials using percolation theory. The model describes the effects of singlettriplet spin transitions on hopping transport by considering the role of spin dynamics on an effective density of hopping sites. Faster spin transitions open up `spin-blocked' pathways to become viable conduction channels and hence produce magnetoresistance. We concentrate on spin transitions under the effects of the hyperfine (isotropic and anisotropic), exchange, and dipolar interactions. The magnetoresistance can be found analytically in several regimes and explains several experimental observations

  2. Effect of quantum tunneling on spin Hall magnetoresistance.

    PubMed

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y3Fe5O12) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  3. Recent Developments of Magnetoresistive Sensors for Industrial Applications.

    PubMed

    Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

    2015-11-12

    The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling).

  4. Graphene magnetoresistance device in van der Pauw geometry.

    PubMed

    Lu, Jianming; Zhang, Haijing; Shi, Wu; Wang, Zhe; Zheng, Yuan; Zhang, Ting; Wang, Ning; Tang, Zikang; Sheng, Ping

    2011-07-13

    We have fabricated extraordinary magnetoresistance (EMR) device, comprising a monolayer graphene with an embedded metallic disk, that exhibits large room temperature magnetoresistance (MR) enhancement of up to 55,000% at 9 T. Finite element simulations yield predictions in excellent agreement with the experiment and show possibility for even better performance. Simplicity, ease of implementation and high sensitivity of this device imply great potential for practical applications.

  5. Sign control of magnetoresistance through chemically engineered interfaces.

    PubMed

    Ciudad, David; Gobbi, Marco; Kinane, Christy J; Eich, Marius; Moodera, Jagadeesh S; Hueso, Luis E

    2014-12-03

    Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. A two-site bipolaron model for organic magnetoresistance

    NASA Astrophysics Data System (ADS)

    Wagemans, W.; Bloom, F. L.; Bobbert, P. A.; Wohlgenannt, M.; Koopmans, B.

    2008-04-01

    The recently proposed bipolaron model for large "organic magnetoresistance" (OMAR) at room temperature is extended to an analytically solvable two-site scheme. It is shown that even this extremely simplified approach reproduces some of the key features of OMAR, viz., the possibility to have both positive and negative magnetoresistance, as well as its universal line shapes. Specific behavior and limiting cases are discussed. Extensions of the model, to guide future experiments and numerical Monte Carlo studies, are suggested.

  7. Research progress on electronic phase separation in low-dimensional perovskite manganite nanostructures.

    PubMed

    Liang, Lizhi; Li, Lei; Wu, Heng; Zhu, Xinhua

    2014-01-01

    Perovskite oxide manganites with a general formula of R1-x AxMnO3 (where R is a trivalent rare-earth element such as La, Pr, Sm, and A is a divalent alkaline-earth element such as Ca, Sr, and Ba) have received much attention due to their unusual electron-transport and magnetic properties, which are indispensable for applications in microelectronic, magnetic, and spintronic devices. Recent advances in the science and technology have resulted in the feature sizes of microelectronic devices based on perovskite manganite oxides down-scaling into nanoscale dimensions. At the nanoscale, low-dimensional perovskite manganite oxide nanostructures display novel physical properties that are different from their bulk and film counterparts. Recently, there is strong experimental evidence to indicate that the low-dimensional perovskite manganite oxide nanostructures are electronically inhomogeneous, consisting of different spatial regions with different electronic orders, a phenomenon that is named as electronic phase separation (EPS). As the geometry sizes of the low-dimensional manganite nanostructures are reduced to the characteristic EPS length scale (typically several tens of nanometers in manganites), the EPS is expected to be strongly modulated, leading to quite dramatic changes in functionality and more emergent phenomena. Therefore, reduced dimensionality opens a door to the new functionalities in perovskite manganite oxides and offers a way to gain new insight into the nature of EPS. During the past few years, much progress has been made in understanding the physical nature of the EPS in low-dimensional perovskite manganite nanostructures both from experimentalists and theorists, which have a profound impact on the oxide nanoelectronics. This nanoreview covers the research progresses of the EPS in low-dimensional perovskite manganite nanostructures such as nanoparticles, nanowires/nanotubes, and nanostructured films and/or patterns. The possible physical origins of the

  8. Research progress on electronic phase separation in low-dimensional perovskite manganite nanostructures

    PubMed Central

    2014-01-01

    Perovskite oxide manganites with a general formula of R1-x AxMnO3 (where R is a trivalent rare-earth element such as La, Pr, Sm, and A is a divalent alkaline-earth element such as Ca, Sr, and Ba) have received much attention due to their unusual electron-transport and magnetic properties, which are indispensable for applications in microelectronic, magnetic, and spintronic devices. Recent advances in the science and technology have resulted in the feature sizes of microelectronic devices based on perovskite manganite oxides down-scaling into nanoscale dimensions. At the nanoscale, low-dimensional perovskite manganite oxide nanostructures display novel physical properties that are different from their bulk and film counterparts. Recently, there is strong experimental evidence to indicate that the low-dimensional perovskite manganite oxide nanostructures are electronically inhomogeneous, consisting of different spatial regions with different electronic orders, a phenomenon that is named as electronic phase separation (EPS). As the geometry sizes of the low-dimensional manganite nanostructures are reduced to the characteristic EPS length scale (typically several tens of nanometers in manganites), the EPS is expected to be strongly modulated, leading to quite dramatic changes in functionality and more emergent phenomena. Therefore, reduced dimensionality opens a door to the new functionalities in perovskite manganite oxides and offers a way to gain new insight into the nature of EPS. During the past few years, much progress has been made in understanding the physical nature of the EPS in low-dimensional perovskite manganite nanostructures both from experimentalists and theorists, which have a profound impact on the oxide nanoelectronics. This nanoreview covers the research progresses of the EPS in low-dimensional perovskite manganite nanostructures such as nanoparticles, nanowires/nanotubes, and nanostructured films and/or patterns. The possible physical origins of the

  9. Structure and colossal dielectric permittivity of Ca2TiCrO6 ceramics

    NASA Astrophysics Data System (ADS)

    Yan-Qing, Tan; Meng, Yan; Yong-Mei, Hao

    2013-01-01

    A colossal permittivity ceramic material, Ca2TiCrO6, was successfully synthesized by the conventional solid-state reaction, and was characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), x-ray photoemission spectroscopy (XPS) and x-ray diffraction (XRD). Rietveld refinement of XRD data indicated that the material crystallized in orthorhombic structure with space group pbnm. SEM displayed Ca2TiCrO6 ceramic grains packed uniformly with the size range 5-20 µm. XPS analyses indicated that elemental chromium and titanium of the material were in mixed valence. The corresponding dielectric property was tested in the frequency range 1 kHz-1 MHz and the temperature range 213-453 K, and the ceramics exhibited a relaxation-like dielectric behaviour. Importantly, the permittivity of Ca2TiCrO6 could reach 80 000 at 298 K (100 Hz) and was maintained at 40 000 up to 398 K at 1 MHz, which could be attributed to the ion disorder and mixed valence of Cr3+/Cr6+ and Ti3+/Ti4+.

  10. Electromechanical and electro-optical functions of plasticized PVC with colossal dielectric constant

    NASA Astrophysics Data System (ADS)

    Sato, Hiromu; Hirai, Toshihiro

    2013-04-01

    A soft dielectric polymer, plasticized poly(vinyl chloride) (PVC gel), has been known as a characteristic actuator with electrotactic creep deformation. The deformation can be applied for bending and contraction. The mechanism of the deformation has been attributed to the colossal dielectric constant of the gel induced by dc field. The dielectric constant at 1 Hz, jumps from less than10 to thousand times larger value. The huge dielectric constant suggests the gel can have electro-optic function. In this paper, we introduce the gel can bend light direction by applying a dc electric field. The PVC gel can bend light direction depending on the electric field. Detailed feature of the light bending will be introduced and discussed. Bending angle can be controlled by dielectric plasticizer and electric field. The components of the gel, PVC and plasticizer themselves, did not show any effect of electro-optical function like the PVC gel. The same feature can be observed in other polymer, like poly(vinyl alcohol)-dimethyl sulphoxide gel, too.

  11. Explanation of the Colossal Sensitivity of Silicon Pentaerythritol Tetranitrate (Si-PETN)

    NASA Astrophysics Data System (ADS)

    Liu, Wei-Guang; Zybin, Sergey; Dasgupta, Siddharth; Goddard, William, III

    2009-06-01

    A new extremely sensitive silicon-based explosive was recently synthesized in Germany by the nitration of tetrakis(hydroxymethyl)-silane, Si(CH2OH)4, with nitric acid. This sila-pentaerythritol tetranitrate (Si-PETN), Si(CH2ONO2)4 (tetrakis(nitratomethyl)-silane) has a molecular structure nearly identical to its carbon analog - PentaErythritol TetraNitrate (PETN), C(CH2ONO2)4 - with the central carbon atom replaced by silicon. Unexpectedly, SiPETN shows dramatically increased sensitivity, exploding with just a touch of a spatula, making it extremely dangerous and difficult to study. We have performed DFT calculations on paths of unimolecular decomposition and identified a novel central carbon-oxygen (or silicon-oxygen) rearrangement which shows a dramatic difference that may explain the colossal sensitivity. In particular, this reaction in SiPETN has significantly lower barrier and far more exothermic, which leads to a large net energy release at very early stages of Si-PETN decomposition facilitating a fast temperature increase and expansion of the reaction zone.

  12. Colossal thermomagnetic response in chiral d-wave superconductor URu2Si2

    NASA Astrophysics Data System (ADS)

    Matsuda, Yuji

    The heavy-fermion compound URu2Si2 exhibits unconventional superconductivity at Tc = 1.45 K deep inside the so-called hidden order phase. An intriguing aspect is that this system has been suggested to be a candidate of a chiral d-wave superconductor, and possible Weyl-type topological superconducting states have been discussed recently. Here we report on the observation of a highly unusual Nernst signal due to the superconducting fluctuations above Tc. The Nernst coefficient is anomalously enhanced (by a factor of ~106) as compared with the theoretically expected value of the Gaussian fluctuations. This colossal Nernst effect intimately reflects the highly unusual superconducting state of URu2Si2. The results invoke possible chiral or Berry-phase fluctuations associated with the broken time-reversal symmetry of the superconducting order parameter. In collaboration with T. Yamashita, Y. Shimoyama, H. Sumiyoshi (Kyoto), S. Fujimoto (Osaka), T. Shibauchi (Tokyo), Y. Haga (JAEA), T. D. Matsuda (TMU) , Y. Onuki (Ryukyus), A. Levchenko (Wisconsin-Madison).

  13. Colossal terahertz nonlinearity of tunneling van der Waals gap (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Ji Yeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

    2016-09-01

    We manufactured an array of three angstrom-wide, five millimeter-long van der Waals gaps of copper-graphene-copper composite, in which unprecedented nonlinearity was observed. To probe and manipulate van der Waals gaps with long wavelength electromagnetic waves such as terahertz waves, one is required to fabricate vertically oriented van der Waals gaps sandwiched between two metal planes with an infinite length in the sense of being much larger than any of the wavelengths used. By comparison with the simple vertical stacking of metal-graphene-metal structure, in our structure, background signals are completely blocked enabling all the light to squeeze through the gap without any strays. When the angstrom-sized van der Waals gaps are irradiated with intense terahertz pulses, the transient voltage across the gap reaches up to 5 V with saturation, sufficiently strong to deform the quantum barrier of angstrom gaps. The large transient potential difference across the gap facilitates electron tunneling through the quantum barrier, blocking terahertz waves completely. This negative feedback of electron tunneling leads to colossal nonlinear optical response, a 97% decrease in the normalized transmittance. Our technology for infinitely long van der Waals gaps can be utilized for other atomically thin materials than single layer graphene, enabling linear and nonlinear angstrom optics in a broad spectral range.

  14. Resistivity dependence of magnetoresistance in Co/ZnO films.

    PubMed

    Quan, Zhi-Yong; Zhang, Li; Liu, Wei; Zeng, Hao; Xu, Xiao-Hong

    2014-01-06

    We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity range from 0.08 to 0.5 Ω · cm. The magnetoresistance value decreases markedly when the resistivity of the films is less than 0.08 Ω · cm or greater than 0.5 Ω · cm. When 0.08 Ω · cm < ρ < 0.5 Ω · cm, the conduction contains two channels: the spin-dependent tunneling channel and the spin-independent second-order hopping (N = 2). The former gives rise to a high room-temperature magnetoresistance effect. When ρ > 0.5 Ω · cm, the spin-independent higher-order hopping (N > 2) comes into play and decreases the tunneling magnetoresistance value. For the samples with ρ < 0.08 Ω · cm, reduced magnetoresistance is mainly ascribed to the formation of percolation paths through interconnected elongated metallic Co particles. This observation is significant for the improvement of room-temperature magnetoresistance value for future spintronic devices.

  15. Evolution and control of the phase competition morphology in a manganite film.

    PubMed

    Zhou, Haibiao; Wang, Lingfei; Hou, Yubin; Huang, Zhen; Lu, Qingyou; Wu, Wenbin

    2015-11-25

    The competition among different phases in perovskite manganites is pronounced since their energies are very close under the interplay of charge, spin, orbital and lattice degrees of freedom. To reveal the roles of underlying interactions, many efforts have been devoted towards directly imaging phase transitions at microscopic scales. Here we show images of the charge-ordered insulator (COI) phase transition from a pure ferromagnetic metal with reducing field or increasing temperature in a strained phase-separated manganite film, using a home-built magnetic force microscope. Compared with the COI melting transition, this reverse transition is sharp, cooperative and martensitic-like with astonishingly unique yet diverse morphologies. The COI domains show variable-dimensional growth at different temperatures and their distribution can illustrate the delicate balance of the underlying interactions in manganites. Our findings also display how phase domain engineering is possible and how the phase competition can be tuned in a controllable manner.

  16. A Minimal tight-binding model for ferromagnetic canted bilayer manganites

    PubMed Central

    Baublitz, M.; Lane, C.; Lin, Hsin; Hafiz, Hasnain; Markiewicz, R. S.; Barbiellini, B.; Sun, Z.; Dessau, D. S.; Bansil, A.

    2014-01-01

    Half-metallicity in materials has been a subject of extensive research due to its potential for applications in spintronics. Ferromagnetic manganites have been seen as a good candidate, and aside from a small minority-spin pocket observed in La2−2xSr1+2xMn2O7 (x = 0.38), transport measurements show that ferromagnetic manganites essentially behave like half metals. Here we develop robust tight-binding models to describe the electronic band structure of the majority as well as minority spin states of ferromagnetic, spin-canted antiferromagnetic, and fully antiferromagnetic bilayer manganites. Both the bilayer coupling between the MnO2 planes and the mixing of the |x2 − y2 > and |3z2 − r2 > Mn 3d orbitals play an important role in the subtle behavior of the bilayer splitting. Effects of kz dispersion are included. PMID:25522737

  17. Visible light induced oxidation of water by rare earth manganites, cobaltites and related oxides

    NASA Astrophysics Data System (ADS)

    Naidu, B. S.; Gupta, Uttam; Maitra, Urmimala; Rao, C. N. R.

    2014-01-01

    A study of the visible light induced oxidation of water by perovskite oxides of the formula LaMO3 (M = transition metal) has revealed the best activity with LaCoO3 which contains Co3+ in the intermediate-spin (IS) with one eg electron. Among the rare earth manganites, only orthorhombic manganites with octahedral Mn3+ ions exhibit good catalytic activity, but hexagonal manganites are poor catalysts. Interestingly, not only the perovskite rare earth cobaltites but also solid solutions of Co3+ in cubic rare earth sesquioxides exhibit catalytic activity comparable to LaCoO3, the Co3+ ion in all these oxides also being in the IS t2g5 e g 1 state.

  18. Striction-Coupled Magnetoresistance in Perovskite-type Manganese Oxides (Nd,Sm)_1/2Sr_1/2MnO_3

    NASA Astrophysics Data System (ADS)

    Kuwahara, H.; Tomioka, Y.; Moritomo, Y.; Asamitsu, A.; Tokura, Y.

    1996-03-01

    Magnetoresistance (MR) of more than three orders of magnitude, which is strongly coupled to lattice striction, has been observed under a relatively low magnetic field (e.g., 0.4 T at 115 K) for a single crystal of perovskite-type manganese oxide with finely controlled ionic radii of the A-sites, (Nd,Sm)_1/2Sr_1/2MnO_3. The colossal MR phenomena are viewed as a first-order insulator-to-metal phase transition induced by a magnetic field, which accompanies a metamagnetic (antiferromagnetic-to-ferromagnetic) transition as well as a lattice-structural change. Clear hystereses as well as switching-like changes of magnetization, striction, and resistivity are observed in increasing and decreasing magnetic field at temperatures (113-160K) near above the Curie temperature. In this temperature region, the ferromagnetic double exchange interaction seems to be suppressed by localization of carriers and/or antiferromagnetic interaction. We speculate that this antiferromagnetic interaction is relevant to a charge-ordering instability, the real space ordering of doped holes, observed in many of the similar manganese oxides. This work was supported by New Energy and Industrial Technology Development Organization (NEDO) of Japan.

  19. One-Dimensional Perovskite Manganite Oxide Nanostructures: Recent Developments in Synthesis, Characterization, Transport Properties, and Applications.

    PubMed

    Li, Lei; Liang, Lizhi; Wu, Heng; Zhu, Xinhua

    2016-12-01

    One-dimensional nanostructures, including nanowires, nanorods, nanotubes, nanofibers, and nanobelts, have promising applications in mesoscopic physics and nanoscale devices. In contrast to other nanostructures, one-dimensional nanostructures can provide unique advantages in investigating the size and dimensionality dependence of the materials' physical properties, such as electrical, thermal, and mechanical performances, and in constructing nanoscale electronic and optoelectronic devices. Among the one-dimensional nanostructures, one-dimensional perovskite manganite nanostructures have been received much attention due to their unusual electron transport and magnetic properties, which are indispensable for the applications in microelectronic, magnetic, and spintronic devices. In the past two decades, much effort has been made to synthesize and characterize one-dimensional perovskite manganite nanostructures in the forms of nanorods, nanowires, nanotubes, and nanobelts. Various physical and chemical deposition techniques and growth mechanisms are explored and developed to control the morphology, identical shape, uniform size, crystalline structure, defects, and homogenous stoichiometry of the one-dimensional perovskite manganite nanostructures. This article provides a comprehensive review of the state-of-the-art research activities that focus on the rational synthesis, structural characterization, fundamental properties, and unique applications of one-dimensional perovskite manganite nanostructures in nanotechnology. It begins with the rational synthesis of one-dimensional perovskite manganite nanostructures and then summarizes their structural characterizations. Fundamental physical properties of one-dimensional perovskite manganite nanostructures are also highlighted, and a range of unique applications in information storages, field-effect transistors, and spintronic devices are discussed. Finally, we conclude this review with some perspectives/outlook and future

  20. Giant magnetoresistance materials for magnetic recording technology

    SciTech Connect

    Heffner, R.H.; Adams, C.D.; Brosha, E.L.

    1997-12-01

    This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). This work focused on a class of transition-metal-oxide (TMO) materials (LaMnO{sub 3} doped with Ca, Ba, or Sr) that exhibits an insulator-to-metal transition near a ferromagnetic phase transition temperature. This yields a very large magnetoresistance; thus these materials may have important uses as magnetic sensors in a variety of applications, ranging from automobiles to read heads for magnetic storage. In addition, the transport current in the ferromagnetic state is likely to be very highly polarized, which means that additional device applications using the phenomena of spin-polarized tunneling can be envisioned. Use of these materials as magnetic sensors depends upon learning to control the synthesis parameters (principally temperature, pressure and composition) to achieve a specific carrier concentration and/or mobility. A second challenge is the high magnetic fields ({ge}1 Tesla) currently required to achieve a large change in resistance. The authors began an investigation of two novel approaches to this field-sensitivity problem, involving the development of multilayer structures of the TMO materials. Finally, they began to explore the use of epitaxial strain as a means of changing the transport properties in thin-film multilayers.

  1. Linear unsaturating magnetoresistance in disordered systems

    NASA Astrophysics Data System (ADS)

    Lai, Ying Tong; Lara, Silvia; Love, Cameron; Ramakrishnan, Navneeth; Adam, Shaffique

    Theoretical works have shown that disordered systems exhibit classical magnetoresistance (MR). In this talk, we examine a variety of experimental systems that observe linear MR at high magnetic fields, including silver chalcogenides, graphene, graphite and Weyl semimetals. We show that a careful analysis of the magnitude of the MR, as well as the field strength at which the MR changes from quadratic to linear, reveal important properties of the system, such as the ratio of the root-mean-square fluctuations in the carrier density and the average carrier density. By looking at other properties such as the zero-field mobility, we show that this carrier density inhomogeneity is consistent with what is known about the microscopic impurities in these experiments. The application of this disorder-induced MR to a variety of different experimental scenarios underline the universality of these theoretical models. This work is supported by the Singapore National Research Foundation (NRF-NRFF2012-01) and the Singapore Ministry of Education and Yale-NUS College through Grant Number R-607-265-01312.

  2. Giant magnetoresistance of copper/permalloy multilayers

    NASA Astrophysics Data System (ADS)

    Holody, P.; Chiang, W. C.; Loloee, R.; Bass, J.; Pratt, W. P., Jr.; Schroeder, P. A.

    1998-11-01

    Current perpendicular (CPP) and current in-plane (CIP) magnetoresistances (MR) have been measured on sputtered Cu/Py (Py=Permalloy) multilayers at 4.2 K. The CPP-MR is several times larger than the CIP-MR. For fixed Py layer thickness, tPy=1.5 nm, both the CPP and CIP MR's show oscillations with increasing tCu with a period similar to that previously reported for the CIP-MR. The CPP data for Cu thicknesses large enough that exchange interactions between Py layers are small are analyzed using the two spin-current model for both infinite and finite spin-diffusion length in Py. The very low coercive field of Py leads to a larger than usual uncertainty in the derived parameters, because of the uncertainty in the degree of antiparallel alignment required for the analysis. Three alternative analyses give bulk and interface spin-dependent anisotropy parameters, β, and γ, of comparable size, so that both must be considered in determining the CPP-MR. Our preferred values, based upon an assumed IPysf=5.5+/-1 nm, are β=0.65+/-0.1 and γ=0.76+/-0.1. These values produce good fits to the CPP-MR's of Co/Cu/Py/Cu multilayers.

  3. Positive magnetoresistance in Ca-doped cobaltites

    SciTech Connect

    Zhou, S. M. Li, Y.; Guo, Y. Q.; Zhao, J. Y.; Shi, L.

    2014-12-08

    Transport properties of polycrystalline La{sub 1−x}Ca{sub x}CoO{sub 3} (0.10 ≤ x ≤ 0.25) are systemically studied in this work. Three types of magnetoresistance (MR) effects are found in the Ca-doped cobaltites. Two negative MRs appear around high-temperature ferromagnetic transition and at low temperatures, which correspond to the conventional MR due to the field-induced suppression of spin-disorder scattering and the intergranular giant-MR due to spin-dependent transport between the ferromagnetic clusters, respectively. More interestingly, another exotic positive MR emerges at intermediate temperature region, which had not been previously reported in Sr- and Ba-doped cobaltites. It is found that this positive MR is associated with an abnormally magnetic transition and increases with the increase of x. For x = 0.25, the MR at low temperatures is dominated by the positive one, which is isotropic and nearly linear with the magnetic field. The possible origin of the positive MR in the Ca-doped cobaltites is discussed.

  4. Controlling organic magnetoresistance via interface engineering

    NASA Astrophysics Data System (ADS)

    Richter, C. A.; Jang, H.-J.; Pookpanratana, S. J.; Basham, J. I.; Hacker, C. A.; Kirillov, O. A.; Kline, R. J.; Jurchescu, O. D.; Gundlach, D. J.

    2014-03-01

    We present the results of experiments in which we manipulate organic magnetoresistance (OMAR) in devices based on Alq3 (tris-(8-hydroxyquinoline) aluminum) and TPD (N,N '-Bis(3-methylphenyl)-N,N '-diphenylbenzidine) by adding a self-assembled monolayer (SAM). The results of OMAR measurements on this OLED-like architecture are correlated with impedance spectroscopy results to elucidate charge carrier transport and accumulation. We observe competing OMAR mechanisms in these devices, the relative strength of which can be tuned by adding SAMs at electrode interfaces. To determine how the interfacial and structural properties of these organic devices effect the OMAR, we obtained a complete picture of the interfacial, topological, and crystalline properties of these devices by performing UPS (Ultraviolet Photoelectron Spectroscopy), XPS (X-ray PS), XRD (X-ray diffraction), and AFM (atomic force microscopy). To verify our understanding of how interfacial changes affect OMAR, we characterized simple Alq3-only devices: one with a SAM and one without it. Despite having the same current density at room temperature, the latter shows a negative MR while the former displays a positive MR.

  5. Organic magnetoresistance under resonant ac drive

    NASA Astrophysics Data System (ADS)

    Roundy, R. C.; Raikh, M. E.

    2013-09-01

    Motivated by a recent experiment, we develop a theory of organic magnetoresistance (OMAR) in the presence of a resonant ac drive. To this end, we perform a thorough analysis of the dynamics of ac-driven electron-hole polaron pair in magnetic field, which is a sum of external and random hyperfine fields. Resonant ac drive affects the OMAR by modifying the singlet content of the eigenmodes. This, in turn, leads to the change of recombination rate, and ultimately, to the change of the spin-blocking that controls the current. Our analysis demonstrates that, upon increasing the drive amplitude, the blocking eigenmodes of the triplet type acquire a singlet admixture and become unblocking. Most surprisingly, the opposite process goes in parallel: new blocking modes emerge from nonblocking precursors as the drive increases. These emergent blocking modes are similar to subradiant modes in the Dicke effect. A nontrivial evolution of eigenmodes translates into a nontrivial behavior of OMAR with the amplitude of the ac drive: it is initially linear, then passes through a maximum, drops, and finally saturates.

  6. Noncontact vibration measurements using magnetoresistive sensing elements

    NASA Astrophysics Data System (ADS)

    Tomassini, R.; Rossi, G.

    2016-06-01

    Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

  7. Hopping magnetoresistance in ion irradiated monolayer graphene

    NASA Astrophysics Data System (ADS)

    Shlimak, I.; Zion, E.; Butenko, A. V.; Wolfson, L.; Richter, V.; Kaganovskii, Yu.; Sharoni, A.; Haran, A.; Naveh, D.; Kogan, E.; Kaveh, M.

    2016-02-01

    Magnetoresistance (MR) of ion irradiated monolayer graphene samples with a variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to T=1.8 K in magnetic fields up to B=8 T. It was observed that in perpendicular magnetic fields, hopping resistivity R decreases, which corresponds to negative MR (NMR), while parallel magnetic field results in positive MR (PMR) at low temperatures. NMR is explained on the basis of the "orbital" model in which perpendicular magnetic field suppresses the destructive interference of many paths through the intermediate sites in the total probability of the long-distance tunneling in the VRH regime. At low fields, a quadratic dependence (| ΔR / R | ∼ B2) of NMR is observed, while at B > B*, the quadratic dependence is replaced by the linear one. It was found that all NMR curves for different samples and different temperatures could be merged into common dependence when plotted as a function of B/B*. It is shown that B* ∼ T1/2 in agreement with predictions of the "orbital" model. The obtained values of B* also allowed us to estimate the localization radius ξ of charge carriers for samples with a different degree of disorder. PMR in parallel magnetic fields is explained by suppression of hopping transitions via double occupied states due to alignment of electron spins.

  8. Planar Hall magnetoresistive aptasensor for thrombin detection.

    PubMed

    Sinha, B; Ramulu, T S; Kim, K W; Venu, R; Lee, J J; Kim, C G

    2014-09-15

    The use of aptamer-based assays is an emerging and attractive approach in disease research and clinical diagnostics. A sensitive aptamer-based sandwich-type sensor is presented to detect human thrombin using a planar Hall magnetoresistive (PHR) sensor in cooperation with superparamagnetic labels. A PHR sensor has the great advantages of a high signal-to-noise ratio, a small offset voltage and linear response in the low-field region, allowing it to act as a high-resolution biosensor. In the system presented here, the sensor has an active area of 50 µm × 50 µm with a 10-nm gold layer deposited onto the sensor surface prior to the binding of thiolated DNA primary aptamer. A polydimethylsiloxane well of 600-µm radius and 1-mm height was prepared around the sensor surface to maintain the same specific area and volume for each sensor. The sensor response was traced in real time upon the addition of streptavidin-functionalized magnetic labels on the sensor. A linear response to the thrombin concentration in the range of 86 pM-8.6 µM and a lower detection limit down to 86 pM was achieved by the proposed present method with a sample volume consumption of 2 µl. The proposed aptasensor has a strong potential for application in clinical diagnosis.

  9. Anomalous Magnetoresistance Phenomena in Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Bergeson, Jeremy D.; Lincoln, Derek M.; Shima Edelstein, Ruth; Prigodin, Vladimir N.; Epstein, Arthur J.

    2006-03-01

    We report magnetoresistance (MR) phenomena with temperature and bias dependence in organic semiconductor thin films with either nonmagnetic or magnetic contacts through high field reaching 9T. For nonmagnetic organic thin films such as Alq3 we find a low field MR up to 15%. A similar magnetic field effect has been reported earlier^1 but, as noted, the mechanism remains unclear. We propose a model of the anomalous MR where charge transport is space-charge limited. The current is determined by the e-h recombination rate. The recombination rate is field dependent, analogous to the chemical yield for radical pairs^2. Using an organic- based magnetic semiconductor^3, V[TCNE]x, and Co as magnetic contacts, with a nonmagnetic organic semiconductor (α-6T) leads to an order-of-magnitude broader zero-centered MR peak superimposed on a spin-valve effect. Possible origins of this broader MR will be discussed. 1. Francis, et al., New J. Phys. 6 185 (2004); Frankevich, et al., Phys. Rev. B 53 4498 (1996) 2. Steiner and Ulrich, Chem. Rev. 89 51 (1989) 3. Pokhodnya, et al., Adv. Mater. 12 410 (2000); Prigodin, et al., Adv. Mater. 14 1230 (2002); Shima Edelstein, et al., Mater. Res. Soc. Symp. Proc. 871E I7.3 (2005)

  10. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    SciTech Connect

    Hashimoto, T.; Kamikawa, S.; Haruyama, J.; Soriano, D.; Pedersen, J. G.; Roche, S.

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  11. Lateral flow immunoassay using magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Taton, Kristin; Johnson, Diane; Guire, Patrick; Lange, Erik; Tondra, Mark

    2009-05-01

    Magnetic particles have been adapted for use as labels in biochemical lateral flow strip tests. Standard gold particle lateral flow assays are generally qualitative; however, with magnetic particles, quantitative results can be obtained by using electronic detection systems with giant magnetoresistive (GMR) sensors. As described here, these small integrated sensor chips can detect the presence of magnetic labels in capture spots whose volume is approximately 150 μm×150 μm×150 μm. The range of linear detection is better than two orders of magnitude; the total range is up to four orders of magnitude. The system was demonstrated with both indirect and sandwich enzyme-linked immunosorbent assays (ELISAs) for protein detection of rabbit IgG and interferon-γ, respectively, achieving detection of 12 pg/ml protein. Ultimately, the goal is for the detector to be fully integrated into the lateral flow strip backing to form a single consumable item that is interrogated by a handheld electronic reader.

  12. Magnetoresistance in paramagnetic heavy fermion metals.

    PubMed

    Parihari, D; Vidhyadhiraja, N S

    2009-10-07

    A theoretical study of magnetic field (h) effects on single-particle spectra and the transport quantities of heavy fermion metals in the paramagnetic phase is carried out. We have employed a non-perturbative local moment approach (LMA) to the asymmetric periodic Anderson model within the dynamical mean field framework. The lattice coherence scale ω(L), which is proportional within the LMA to the spin-flip energy scale, and has been shown in earlier studies to be the energy scale at which crossover to single-impurity physics occurs, increases monotonically with increasing magnetic field. The many body Kondo resonance in the density of states at the Fermi level splits into two, with the splitting being proportional to the field itself. For h≥0, we demonstrate adiabatic continuity from the strongly interacting case to a corresponding non-interacting limit, thus establishing Fermi liquid behaviour for heavy fermion metals in the presence of a magnetic field. In the Kondo lattice regime, the theoretically computed magnetoresistance is found to be negative in the entire temperature range. We argue that such a result could be understood at [Formula: see text] by field-induced suppression of spin-flip scattering and at [Formula: see text] through lattice coherence. The coherence peak in the heavy fermion resistivity diminishes and moves to higher temperatures with increasing field. Direct comparison of the theoretical results to the field dependent resistivity measurements in CeB(6) yields good agreement.

  13. Reinforcement of double-exchange ferromagnetic coupling by Ru in La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7} manganite system

    SciTech Connect

    Kumaresavanji, M.; Fontes, M.B.; Lopes, A.M.L.; Araujo, J.P.

    2014-03-01

    Highlights: • Effect of Mn-site doping by Ru has been studied in La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7}. • Electrical resistance, magnetoresistance and magnetic properties were measured. • Ru substitution enhances the ferromagnetism and metallicity. • Results were interpreted by the ferromagnetically coupled Ru with Mn ions in Mn–O–Ru network. - Abstract: The effect of Mn-site doping on magnetic and transport properties in the bilayer manganites La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7} (y = 0.0, 0.04, 0.08 and 0.15) has been studied. The undoped compound La{sub 1.24}Sr{sub 1.76}Mn{sub 2}O{sub 7} exhibits a ferromagnetic metal to paramagnetic insulator transition at T{sub C} = 130 K and the substitution of Ru shifts the transition temperatures to higher temperature values. The increased metal–insulator transition by Ru substitution, obtained from temperature dependence of resistivity measurements, indicates that the Ru substitution enhances the metallic state at low temperature regime and favours the Mn–Ru pairs in the Ru doped samples. Moreover, the activation energy values calculated from the temperature dependence of resistivity curves suggest that the Ru substitution weakens the formation of polarons. The increased magnetoresistance ratio from 108% to 136% by Ru substitution, measured at 5 K, points out that the Ru substitution also enhances the inter-grain tunneling magnetoresistance. Thus, the ferromagnetic order and metallic state in La{sub 1.24}Sr{sub 1.76}Mn{sub 2}O{sub 7} system have been enhanced by the presence of Ru in the Mn-site. These reinforcements of ferromagnetic metallic state and magnetoresistance have been interpreted by the ferromagnetically coupled high spin states of Ru with Mn ions in the Mn–O–Ru network.

  14. Ultrafast structural and electronic dynamics of the metallic phase in a layered manganite.

    PubMed

    Piazza, L; Ma, C; Yang, H X; Mann, A; Zhu, Y; Li, J Q; Carbone, F

    2014-01-01

    The transition between different states in manganites can be driven by various external stimuli. Controlling these transitions with light opens the possibility to investigate the microscopic path through which they evolve. We performed femtosecond (fs) transmission electron microscopy on a bi-layered manganite to study its response to ultrafast photoexcitation. We show that a photoinduced temperature jump launches a pressure wave that provokes coherent oscillations of the lattice parameters, detected via ultrafast electron diffraction. Their impact on the electronic structure are monitored via ultrafast electron energy loss spectroscopy, revealing the dynamics of the different orbitals in response to specific structural distortions.

  15. Spin-spiral states in undoped manganites: role of finite Hund's rule coupling.

    PubMed

    Kumar, Sanjeev; van den Brink, Jeroen; Kampf, Arno P

    2010-01-08

    The experimental observation of multiferroic behavior in perovskite manganites with a spiral spin structure requires a clarification of the origin of these magnetic states and their relation to ferroelectricity. We show that spin-spiral phases with a diagonal wave vector and also an E-type phase exist for intermediate value of Hund's rule and the Jahn-Teller coupling in the orbitally ordered and insulating state of the standard two-band model Hamiltonian for manganites. Our results support the spin-current mechanism for ferroelectricity and present an alternative view to earlier conclusions where frustrating superexchange couplings were crucial to obtaining spin-spiral states.

  16. Unraveling electronic and magnetic structure at cuprate-manganite interfaces

    NASA Astrophysics Data System (ADS)

    Freeland, John

    2014-03-01

    Oxide interfaces offer a rich variety of physics and a pathway to create new classes of functional oxide materials. The interface between the cuprate high-temperature superconductors and ferromagnetic manganites is of particular interest due to the strongly antagonistic nature of the superconducting and ferromagnetic phases. Advancements in the synthesis of oxide heterostructure offers the opportunity to merge these two dissimilar oxides with atomic precision to understand the fundamental limits of bringing such states into close proximity. However, the main challenge is to understand the physical framework that describes the behavior of strongly correlated electrons near oxide interfaces. One aspect that will be addressed here is the use of advanced tools to gain detailed electronic and magnetic information from the boundary region. In this talk, recent work will be addressed both in connection to visualizing the interface with spatially resolved tools as well as harnessing layer-by-layer growth to explore the limits in ultrathin superlattices. These insights allow us to better understand the physics behind the interfacial spin and orbital reconstruction observed in this system. Work at Argonne is supported by the U.S. Department of Energy, Office of Science, under Contract No. DE-AC02-06CH11357.

  17. Photocreating supercooled spiral-spin states in a multiferroic manganite

    NASA Astrophysics Data System (ADS)

    Sheu, Y. M.; Ogawa, N.; Kaneko, Y.; Tokura, Y.

    2016-08-01

    We demonstrate that the dynamics of the a b -spiral-spin order in a magnetoelectric multiferroic Eu0.55Y0.45MnO3 can be unambiguously probed through optical second harmonic signals, generated via spin-induced ferroelectric polarization. In the case of weak excitation, the ferroelectric and the spiral-spin order remains interlocked, both relaxing through spin-lattice relaxation in the nonequilibrium state. When the additional optical pulse illuminating the sample is intense enough to induce a local phase transition thermally, the system creates a metastable state of the b c -spiral-spin order (with the electric polarization P ∥c ) via supercooling across the first-order phase transition between the a b and b c spiral. The supercooled state of the b c -spiral spin is formed in the thermodynamical ground state of the a b spiral (P ∥a ), displaying a prolonged lifetime with strong dependence on the magnetic field along the a axis. The observed phenomena provide a different paradigm for photoswitching between the two distinct multiferroic states, motivating further research into a direct observation of the photocreated supercooled b c -spiral spin in multiferroic manganites.

  18. Synthesis and magnetic properties of manganite multiple heterostructure nanoribbons.

    PubMed

    Yu, Jiangying; Huang, Kai; Wu, Heyun; Li, Ping

    2012-09-14

    The fabrication and applications of two-dimensional complex oxide heterostructures have gained great attention. However, the achievement of these materials in one-dimensional form with multiple interfaces is still elusive. Here, we report the growth of manganite CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons via the use of CaMnO(3) powders as the precursor for the molten-salt process. In contrast with the antiferromagnetism in CaMn(3)O(6) and CaMn(2)O(4) in the bulk, magnetization measurements indicate the coexistence of a ferromagnetic phase with a spin-glass-like component in CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons. An asymmetric magnetization hysteresis loop observed in the applied magnetic field H≤ 3 T is attributed to the coupling between the antiferromagnetic phase and the ferromagnetic or spin-glass-like phase in CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons.

  19. Intrinsic antiferromagnetic/insulating phase at manganite surfaces and interfaces.

    PubMed

    Valencia, S; Peña, L; Konstantinovic, Z; Balcells, Ll; Galceran, R; Schmitz, D; Sandiumenge, F; Casanove, M; Martínez, B

    2014-04-23

    In this work we investigate interfacial effects in bilayer systems integrated by La(2/3)Sr(1/3)MnO(3) (LSMO) thin films and different capping layers by means of surface-sensitive synchrotron radiation techniques and transport measurements. Our data reveal a complex scenario with a capping-dependent variation of the Mn oxidation state by the interface. However, irrespective of the capping material, an antiferromagnetic/insulating phase is also detected at the interface, which is likely to originate from a preferential occupancy of Mn 3d 3z(2)-r(2) e(g) orbitals. This phase, which extends approximately to two unit cells, is also observed in uncapped LSMO reference samples, thus pointing to an intrinsic interfacial phase separation phenomenon, probably promoted by the structural disruption and inversion symmetry breaking at the LSMO free surface/interface. These experimental observations strongly suggest that the structural disruption, with its intrinsic inversion symmetry breaking at the LSMO interfaces, plays a major role in the observed depressed magnetotransport properties in manganite-based magnetic tunneling junctions and explains the origin of the so-called dead layer.

  20. Spectroscopic Evidence of Formation of Small Polarons in Doped Manganites

    NASA Astrophysics Data System (ADS)

    Moritomo, Yutaka; Machida, Akihiko; Nakamura, Arao

    1998-03-01

    Temperature dependence of absorption spectra for thin films of doped manganites R_0.6Sr_0.4MnO_3, where R is rare-earth atom, has been investigated systematically changing averaged ionic radius < rA > of perovskite A-site. We have observed a specific absorption band at ~1.5eV due to optical excitations from small polarons (SP)(Machida et al.), submitted.. Spectral weight of the SP band increases with decreasing temperature and eventually disappears at the insulator-metal (IM) transition, indicating that SP in the paramagnetic state (T >= T_C) changes into bare electrons (or large polarons) in the ferromagnetic state due to the enhanced one-electron bandwidth W. We further derived important physical quantities, i.e., W, on-site exchange interaction J and binding energy Ep of SP, and discuss material dependence of stability of SP. This work was supported by a Grant-In-Aid for Scientific Research from the Ministry of Education, Science, Sport and Culture and from PRESTO, Japan Scienece and Technology Corporation (JST), Japan.

  1. Epitaxial manganite freestanding bridges for low power pressure sensors

    NASA Astrophysics Data System (ADS)

    Le Bourdais, D.; Agnus, G.; Maroutian, T.; Pillard, V.; Aubert, P.; Bachelet, R.; Saint-Girons, G.; Vilquin, B.; Lefeuvre, E.; Lecoeur, P.

    2015-09-01

    The highly temperature-dependent resistivity of the La2/3Sr1/3MnO3 (LSMO) manganite is taken as an advantage in a pressure sensor design based on the Pirani effect. Thin epitaxial films are grown on silicon substrate thanks to a SrTiO3 buffer layer that allows the fabrication of freestanding bridges by means of clean-room processes. The devices are then heated by Joule effect and their temperature modulated by heat transfer through the surrounding gas. The higher the current flowing in the bridge, the larger the resistance variation with pressure is, due to the Pirani effect. The heating current and device geometry are tuned in order to stay in a monotonous regime, avoiding the change of sign of the LSMO temperature coefficient. A sensitivity increased by a factor of 3 and a power consumption reduced by 5 orders of magnitude are measured by comparing oxide devices with conventional metallic ones of same geometry.

  2. Magnetoresistance of heavy and light metal/ferromagnet bilayers

    SciTech Connect

    Avci, Can Onur; Garello, Kevin; Mendil, Johannes; Ghosh, Abhijit; Blasakis, Nicolas; Gabureac, Mihai; Trassin, Morgan; Fiebig, Manfred; Gambardella, Pietro

    2015-11-09

    We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM) bilayers in the linear and nonlinear (current-dependent) regimes and compared it with the amplitude of the spin-orbit torques and thermally induced electric fields. Our experiments reveal that the magnetoresistance of the heavy NM/Co bilayers (NM = Ta, W, and Pt) is phenomenologically similar to the spin Hall magnetoresistance (SMR) of YIG/Pt, but has a much larger anisotropy of the order of 0.5%, which increases with the atomic number of the NM. This SMR-like behavior is absent in light NM/Co bilayers (NM = Ti and Cu), which present the standard anisotropic magnetoresistance expected from polycrystalline FM layers. In the Ta, W, and Pt/Co bilayers, we find an additional magnetoresistance directly proportional to the current and to the transverse component of the magnetization. This so-called unidirectional SMR, of the order of 0.005%, is largest in W and correlates with the amplitude of the antidamping spin-orbit torque. The unidirectional SMR is below the accuracy of our measurements in YIG/Pt.

  3. The Effects of Fringe Fields on Organic Magnetoresistance

    NASA Astrophysics Data System (ADS)

    Harmon, Nicholas; Macià, Ferran; Wang, Fujian; Wohlgenannt, Markus; Kent, Andrew; Flatté, Michael

    2013-03-01

    The importance of random hyperfine fields is now widely acknowledged as a vital ingredient for the phenomena of organic magnetoresistance (OMAR). Recent experiments (Phys. Rev. X 2 021013 (2012)) have shown that another type of random field - fringe fields due to a nearby ferromagnet - can also dramatically affect magnetoconductivity. A theoretical analysis of the fringe field OMAR is challenging due to the different properties of the fringe fields when compared to the hyperfine fields. For instance, the range of fringe field strengths is 1-2 orders of magnitude larger than that of the hyperfine couplings. The correlation length between fringe fields is also larger by the same degree. We use a recent theory of OMAR that is well-suited to numerically calculate the magnetoresistance with both hyperfine and fringe fields present. We find agreement with key features of experimental fringe-field magnetoresistance dependences on applied magnetic field, including the field values of extrema of the magnetoresistance, the region of large magnetoresistance effects from the fringe fields, and the sign of the effect. This work was supported by an ARO MURI.

  4. Tens of successive, colossal Missoula floods at north and east margins of channeled scabland

    USGS Publications Warehouse

    Waitt, Richard B.

    1983-01-01

    In deposits of Pleistocene glacial lakes in northern Idaho and Washington, beds comprising 20 to 55 varves (average = 35-40) separate each successive graded gravel or sand bed that was swiftly emplaced by a catastrophic flood from glacial Lake Missoula. The floodlaid beds are similar to rhythmic successions of 40 or more graded beds in backflooded tributaries of the lower Columbia River. This new field evidence corroborates a controversial hypothesis that the great Pleistocene floods from glacial Lake Missoula were 40 or more colossal, separate joekulhlaups, and refutes the conventional notion that any two successive graded beds were deposited by one flood. The only outlet of the 2000-km3 glacial Lake Missoula was through its great ice dam. Calculations show that each time the lake rose to about 600 m deep, it made the glacier buoyant and engendered a catastrophic discharge along the glacier bed (a joekulhlaup). A reconstructed water budget suggests that after a complete draining, the lake refilled in 3 to 6 decades; thus the hydrostatic prerequisites for a joekulhlaup were reestablished dozens of times during the late-Wisconsin episode of lake damming. Various intercalated tephra layers, radiocarbon dates, varve successions, and the Bonneville flood deposits in the region suggest that late-Wisconsin glacial Lake Missoula existed for about 2 millennia within the period 15,000 to 12,700(?) yr ago. Varve beds indicate that the mean period between Missoula floods was about 4 decades, but became shorter during the last several floods. Between 20 and 30 of the Missoula joekulhlaups occurred after the single great flood from Lake Bonneville, which according to 14C dating in the Bonneville basin by W. E. Scott and associates and by D. R. Currey occurred some time between 15,000 and 14,000 yr ago.

  5. Colossal Kerr nonlinearity based on electromagnetically induced transparency in a five-level double-ladder atomic system.

    PubMed

    Hamedi, H R; Gharamaleki, Ali Hamrah; Sahrai, Mostafa

    2016-08-01

    The paper is aimed at modeling the enhanced Kerr nonlinearity in a five-level double-ladder-type atomic system based on electromagnetically induced transparency (EIT) by using the semi-classical density matrix method. We present an analytical model to explain the origin of Kerr nonlinearity enhancement. The scheme also results in a several orders of magnitude increase in the Kerr nonlinearity in comparison with the well-known four- and three-level atomic systems. In addition to the steady-state case, the time-dependent Kerr nonlinearity and the switching feature of EIT-based colossal Kerr nonlinearity is investigated for the proposed system.

  6. Magnetoresistive junctions based on epitaxial graphene and h-BN

    NASA Astrophysics Data System (ADS)

    Yazyev, Oleg; Pasquarello, Alfredo

    2009-03-01

    Using a first-principles approach, we investigate the structural, magnetic and transport properties of interfaces based on epitaxially grown monolayer graphene and hexagonal boron nitride (h-BN) in combination with ferromagnetic transition metals (Fe, Co and Ni). Such structurally well defined interfaces based on (111) fcc or (0001) hcp transition metals can be produced using simple manufacturing processes. Our calculations predict magnetoresistance ratios over 100% for certain junction compositions. In addition, such systems feature strong antiparallel (Fe and Co) and parallel (Ni) exchange coupling across the interface combined with low junction resistance. The predicted properties position such magnetoresistive junctions as an interesting alternative to the currently used giant and tunneling magnetoresistance systems and make them suitable for practical applications.

  7. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    PubMed

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

  8. Anomalous electronic structure and magnetoresistance in TaAs2

    PubMed Central

    Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

    2016-01-01

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions. PMID:27271852

  9. Anomalous electronic structure and magnetoresistance in TaAs2

    DOE PAGES

    Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; ...

    2016-01-01

    We report that the change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. In conclusion, density functional calculations find that TaAs2 is a new topological semimetal [Z2 invariant (0;111)] withoutmore » Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.« less

  10. Electronic structure basis for the extraordinary magnetoresistance in WTe2

    DOE PAGES

    Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; ...

    2014-11-19

    The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior ofmore » the magnetoresistance in WTe₂ was identified.« less

  11. Structural and giant magnetoresistance characterization of Ag sbnd Co multilayers

    NASA Astrophysics Data System (ADS)

    Angelakeris, M.; Poulopoulos, P.; Valassiades, O.; Stoemenos, J.; Kalogirou, O.; Niarchos, D.; Flevaris, N. K.

    1997-01-01

    Ag sbnd Co multilayers were prepared on various substrates (Si, polyimide and glass) by e-beam evaporation under ultra high vacuum. X-ray diffraction and high resolution electron microscopy studies showed a deterioration of multilayer structure upon reducing the individual Co-layer thickness to 0.5 nm. Furthermore, the saturation field in the parallel field geometry increases, as SQUID magnetometry revealed, while magnetoresistance reaches 16% at room temperature and exceeds 30% at 30 K. Magnetoresistance values were found to depend strongly on individual layer thicknesses as well as on the total film thickness.

  12. Magnetoresistance oscillations in superconducting granular niobium nitride nanowires.

    SciTech Connect

    Patel, U.; Xiao, Z. L.; Gurevich, A.; Avci, S.; Hua, J.; Divan, R.; Welp, U.; Kwok, W. K.; Northern Illinois Univ.; National High Magnetic Field Lab.

    2009-01-01

    We report on magnetoresistance oscillations in superconducting NbN{sub x} nanowires synthesized through ammonia gas annealing of NbSe{sub 3} precursor nanostructures. Even though the transverse dimensions of the nanowires are much larger than the superconducting coherence length, the voltage-current characteristics of these nanowires at low temperatures are reminiscent of one-dimensional superconductors where quantum phase slips are associated with the origin of dissipation. We show that both the magnetoresistance oscillations and voltage-current characteristics observed in this work result from the granular structure of our nanowires.

  13. Reversible and irreversible magnetoresistance of quasisingle domain permalloy microstructures

    NASA Astrophysics Data System (ADS)

    Steiner, M.; Pels, C.; Meier, G.

    2004-06-01

    Permalloy microstructures are investigated by magnetoresistance measurements at 2.0 K and by magnetic-force microscopy at room temperature. While the reversible anisotropic magnetoresistance is determined to be 2.4% at saturation fields of Bsat=1020 mT, the irreversible switching yields a resistance change of the order of 0.05% at 13 mT. By tilting the external magnetic field relative to the easy axis of the quasi single-domain microstructures insight in the reversal process is gained. Comparison with an analytical model provides evidence for magnetization reversal by curling.

  14. Analog isolated electronic dynamometer based on a magnetoresistive current sensor

    NASA Astrophysics Data System (ADS)

    Arcos Carrasco, C.; Ramírez Muñoz, D.; Ravelo Arias, S. I.; Sánchez Moreno, J.; Maset Sancho, E.; Garrigós Sirvent, A.

    2017-03-01

    In this work, an electronic system is presented to measure the force applied by a solenoid. The originality of the work is focused on the use of a magnetoresistive current sensor to provide the isolation barrier needed in the actual industrial plant where the solenoids are working. The design of the electronic system is presented as well as experimental measurements as a result of a calibration process showing a negligible hysteresis with that specific sensor. The magnetoresistive current sensor is used to develop transmission functions rather than playing its usual sensing roles.

  15. Rectification magnetoresistance device: Experimental realization and theoretical simulation

    NASA Astrophysics Data System (ADS)

    Zhang, Kun; Huang, Qikun; Yan, Yi; Wang, Xiaolin; Wang, Jing; Kang, Shishou; Tian, Yufeng

    2016-11-01

    A unique technique has been proposed to realize rectification magnetoresistance (RMR) by combining a commercial diode and a magnetoresistance component in parallel. The observed RMR could be greatly tuned in a wide range by applying direct current and alternating current simultaneously to the device. Moreover, a quantitative theoretical model has been established, which well explained both the observed RMR and the electrical manipulation behavior. The highly tunable RMR and the correlated magnetoelectric functionalities provide an alternative route for developing multi-functional spintronics devices.

  16. Detection of magnetic resonance signals using a magnetoresistive sensor

    DOEpatents

    Budker, Dmitry; Pines, Alexander; Xu, Shoujun; Hilty, Christian; Ledbetter, Micah P; Bouchard, Louis S

    2013-10-01

    A method and apparatus are described wherein a micro sample of a fluidic material may be assayed without sample contamination using NMR techniques, in combination with magnetoresistive sensors. The fluidic material to be assayed is first subject to pre-polarization, in one embodiment, by passage through a magnetic field. The magnetization of the fluidic material is then subject to an encoding process, in one embodiment an rf-induced inversion by passage through an adiabatic fast-passage module. Thereafter, the changes in magnetization are detected by a pair of solid-state magnetoresistive sensors arranged in gradiometer mode. Miniaturization is afforded by the close spacing of the various modules.

  17. Oxygen Isotope Evidence for Mn(II)-Catalyzed Recrystallization of Manganite (γ-MnOOH).

    PubMed

    Frierdich, Andrew J; Spicuzza, Michael J; Scherer, Michelle M

    2016-06-21

    Manganese is biogeochemically cycled between aqueous Mn(II) and Mn(IV) oxides. Aqueous Mn(II) often coexists with Mn(IV) oxides, and redox reactions between the two (e.g., comproportionation) are well known to result in the formation of Mn(III) minerals. It is unknown, however, whether aqueous Mn(II) exchanges with structural Mn(III) in manganese oxides in the absence of any mineral transformation (similar to what has been reported for aqueous Fe(II) and some Fe(III) minerals). To probe whether atoms exchange between a Mn(III) oxide and water, we use a (17)O tracer to measure oxygen isotope exchange between structural oxygen in manganite (γ-MnOOH) and water. In the absence of aqueous Mn(II), about 18% of the oxygen atoms in manganite exchange with the aqueous phase, which is close to the estimated surface oxygen atoms (∼11%). In the presence of aqueous Mn(II), an additional 10% (for a total of 28%) of the oxygen atoms exchange with water, suggesting that some of the bulk manganite mineral (i.e., beyond surface) is exchanging with the fluid. Exchange of manganite oxygen with water occurs without any observable change in mineral phase and appears to be independent of the rapid Mn(II) sorption kinetics. These experiments suggest that Mn(II) catalyzes manganese oxide recrystallization and illustrate a new pathway by which these ubiquitous minerals interact with their surrounding fluid.

  18. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    NASA Technical Reports Server (NTRS)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  19. Ferroelectric switching dynamics of topological vortex domains in a hexagonal manganite.

    PubMed

    Han, Myung-Geun; Zhu, Yimei; Wu, Lijun; Aoki, Toshihiro; Volkov, Vyacheslav; Wang, Xueyun; Chae, Seung Chul; Oh, Yoon Seok; Cheong, Sang-Wook

    2013-05-07

    Field-induced switching of ferroelectric domains with a topological vortex configuration is studied by atomic imaging and electrical biasing in an electron microscope, revealing the role of topological defects on the topologically-guided change of domain-wall pairs in a hexagonal manganite.

  20. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    NASA Technical Reports Server (NTRS)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  1. Observation of complex magnetic behaviour in calcium doped neodymium manganites

    NASA Astrophysics Data System (ADS)

    Sudakshina, B.; Devi Chandrasekhar, K.; Yang, H. D.; Vasundhara, M.

    2017-02-01

    Crystal structure and magnetic properties of polycrystalline Nd1-x Ca x MnO3 (x  =  0.0, 0.2, 0.3, 0.33, 0.4, 0.5, 0.6 and 0.8) manganites were investigated. The fine structural refinement using GSAS was found to undergo a transition from Pnma reflections to Pbnm reflections associated with the Ca substitution at x  =  0.3. The magnetic ordering of these compounds witnessed distinct magnetic phases with variations of Ca substitution. Magnetic ordering of the parent compound, NdMnO3, was found as A-type antiferromagnetic (AFM) in accordance with the earlier reports, which progressively undergoes to canted A-type AFM for x  =  0.2, pseudo CE-type AFM for the intermediate compositions, i.e. x  =  0.3 to x  =  0.5 and CE-type AFM for x  >  0.5. The x  =  0.2 compound exhibited ferromagnetic like (weak AFM) behaviour, and the critical exponent study reinforced the magnetic inhomogeneity of the compound. Hysteresis curves of all the compounds measured at different temperatures implied the presence of metamagnetic like transitions for the intermediate compositions (0.3  ⩽  x  ⩽  0.5). Relative cooling power (RCP) value of Nd0.8Ca0.2MnO3 was observed to be 900 J Kg-1, at the higher magnetic field, making it a promising candidate for magnetic refrigeration applications.

  2. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices

    NASA Astrophysics Data System (ADS)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-01

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  3. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices

    PubMed Central

    Huang, Qi-kun; Yan, Yi; Zhang, Kun; Li, Huan-huan; Kang, Shishou; Tian, Yu-feng

    2016-01-01

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation. PMID:27876868

  4. Magnetoresistive performance and comparison of supermagnetic nanoparticles on giant magnetoresistive sensor-based detection system

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Wang, Yi; Tu, Liang; Feng, Yinglong; Klein, Todd; Wang, Jian-Ping

    2014-07-01

    Giant magnetoresistive (GMR) biosensors have emerged as powerful tools for ultrasensitive, multiplexed, real-time electrical readout, and rapid biological/chemical detection while combining with magnetic particles. Finding appropriate magnetic nanoparticles (MNPs) and its influences on the detection signal is a vital aspect to the GMR bio-sensing technology. Here, we report a GMR sensor based detection system capable of stable and convenient connection, and real-time measurement. Five different types of MNPs with sizes ranging from 10 to 100 nm were investigated for GMR biosensing. The experiments were accomplished with the aid of DNA hybridization and detection architecture on GMR sensor surface. We found that different MNPs markedly affected the final detection signal, depending on their characteristics of magnetic moment, size, and surface-based binding ability, etc. This work may provide a useful guidance in selecting or preparing MNPs to enhance the sensitivity of GMR biosensors, and eventually lead to a versatile and portable device for molecular diagnostics.

  5. Magnetoresistive performance and comparison of supermagnetic nanoparticles on giant magnetoresistive sensor-based detection system.

    PubMed

    Wang, Wei; Wang, Yi; Tu, Liang; Feng, Yinglong; Klein, Todd; Wang, Jian-Ping

    2014-07-21

    Giant magnetoresistive (GMR) biosensors have emerged as powerful tools for ultrasensitive, multiplexed, real-time electrical readout, and rapid biological/chemical detection while combining with magnetic particles. Finding appropriate magnetic nanoparticles (MNPs) and its influences on the detection signal is a vital aspect to the GMR bio-sensing technology. Here, we report a GMR sensor based detection system capable of stable and convenient connection, and real-time measurement. Five different types of MNPs with sizes ranging from 10 to 100 nm were investigated for GMR biosensing. The experiments were accomplished with the aid of DNA hybridization and detection architecture on GMR sensor surface. We found that different MNPs markedly affected the final detection signal, depending on their characteristics of magnetic moment, size, and surface-based binding ability, etc. This work may provide a useful guidance in selecting or preparing MNPs to enhance the sensitivity of GMR biosensors, and eventually lead to a versatile and portable device for molecular diagnostics.

  6. Anisotropic magnetoresistance and planar Hall effect in La2/3Ca1/3MnO3 thin films with misfit strain

    NASA Astrophysics Data System (ADS)

    Li, J.; Wang, S. G.; Zhang, Y.; Cui, L. M.; Jin, Y. R.; Deng, H.; Zheng, D. N.; Zimmers, A.; Aubin, H.; Lang, P. L.

    2013-02-01

    In our previous study anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) of epitaxial La2/3Ca1/3MnO3 (LCMO) thin films grown on SrTiO3(001) (STO) substrates were studied, and a phenomenological model in the high field limit was developed based on the 4/mmm point group. The derived longitudinal resistivity includes a four-fold as well as a two-fold symmetry term of the in-plane field angle, which can fit the experimental results well. In this study, to highlight the effects of misfit strain, AMR and PHE of LCMO thin films epitaxially grown on LaAlO3(001) substrates were studied, along either the [110] or the [100] direction. Both values are around a few percent, comparable to those measured in films on STO. Nevertheless, only tiny four-fold oscillations appear below the metal-insulator transition temperature Tp along the [110] direction, in contrast to the case of STO, where the four-fold term is prominent. The relationship between this four-fold symmetry and the misfit strain is then discussed in terms of the partial recovery of orbital magnetic moment. The mechanism for AMR and PHE in manganites then can be understood as an anisotropic percolation at metal-insulator transition resulting in the peak, and the spin-orbital coupling effect that accounts for the remnant far below Tp.

  7. Conductivity and magnetoresistance of La0.7Ce0.3MnO3-δ thin films under photoexcitation

    NASA Astrophysics Data System (ADS)

    Thiessen, A.; Beyreuther, E.; Werner, R.; Kleiner, R.; Koelle, D.; Eng, L. M.

    2015-01-01

    La0.7Ce0.3MnO3 thin films of different thicknesses, degrees of CeO2-phase segregation and oxygen deficiency, grown on SrTiO3 single crystal substrates, were comparatively investigated with respect to both their spectral and temperature-dependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optical excitation, oxygen reduction appeared to be an effective way to decrease the film resistance, but the film thickness was found to play a minor role. However, from the evaluation of the spectral behaviour of the PC and the comparison of the MR of the LCeMO/substrate-samples with a bare substrate under illumination we find that the photoconductivity data reflects not only contributions from (i) photogenerated charge carriers in the film and (ii) carriers injected from the photoconductive substrate (as concluded from earlier works), but also (iii) a decisive parallel photoconduction in the SrTiO3 substrate. Furthermore—also by analyzing the MR characteristics—the unexpected occurence of a strong electroresistive effect in the sample with the highest degree of CeO2 segregation and oxygen deficiency could be attributed to the electroresistance of the SrTiO3 substrate as well. The results suggest a critical reconsideration and possibly a reinterpretation of several previous photoconductivity and electroresistance investigations of manganite thin films on SrTiO3.

  8. Experimental evidence for the formation of CoFe{sub 2}C phase with colossal magnetocrystalline-anisotropy

    SciTech Connect

    El-Gendy, Ahmed A. E-mail: ecarpenter2@vcu.edu; Bertino, Massimo; Qian, Meichun; Khanna, Shiv N. E-mail: ecarpenter2@vcu.edu; Clifford, Dustin; Carpenter, Everett E. E-mail: ecarpenter2@vcu.edu

    2015-05-25

    Attainment of magnetic order in nanoparticles at room temperature is an issue of critical importance for many different technologies. For ordinary ferromagnetic materials, a reduction in size leads to decreased magnetic anisotropy and results in superparamagnetic relaxations. If, instead, anisotropy could be enhanced at reduced particle sizes, then it would be possible to attain stable magnetic order at room temperature. Herein, we provide experimental evidence substantiating the synthesis of a cobalt iron carbide phase (CoFe{sub 2}C) of nanoparticles. Structural characterization of the CoFe{sub 2}C carbide phase was performed by transmission electron microscopy, electron diffraction and energy electron spectroscopy. X-ray diffraction was also performed as a complimentary analysis. Magnetic characterization of the carbide phase revealed a blocking temperature, T{sub B}, of 790 K for particles with a domain size as small as 5 ± 1 nm. The particles have magnetocrystalline anisotropy of 4.6 ± 2 × 10{sup 6 }J/m{sup 3}, which is ten times larger than that of Co nanoparticles. Such colossal anisotropy leads to thermally stable long range magnetic order. Moreover, the thermal stability constant is much larger than that of the commonly used FePt nanoparticles. With thermal stability and colossal anisotropy, the CoFe{sub 2}C nanoparticles have huge potential for enhanced magnetic data storage devices.

  9. Impact of metallophilicity on "colossal" positive and negative thermal expansion in a series of isostructural dicyanometallate coordination polymers.

    PubMed

    Korcok, Jasmine L; Katz, Michael J; Leznoff, Daniel B

    2009-04-08

    Five isostructural dicyanometallate coordination polymers containing metallophilic interactions (In[M(CN)(2)](3) (M = Ag, Au), KCd[M(CN)(2)](3), and KNi[Au(CN)(2)](3)) were synthesized and investigated by variable-temperature powder X-ray diffraction to probe their thermal expansion properties. The compounds have a trigonal unit cell and show positive thermal expansion (PTE) in the ab plane, where Kagome sheets of M atoms reside, and negative thermal expansion (NTE) along the trigonal c axis, perpendicular to these sheets. The magnitude of thermal expansion is unusually large in all cases (40 x 10(-6) K(-1) < |alpha| < 110 x 10(-6) K(-1)). The system with the weakest metallophilic interactions, In[Ag(CN)(2)](3), shows the most "colossal" thermal expansion of the series (alpha(a) = 105(2) x 10(-6) K(-1), alpha(c) = -84(2) x 10(-6) K(-1) at 295 K), while systems containing stronger Au-Au interactions show relatively reduced thermal expansion. Thus, it appears that strong metallophilic interactions hinder colossal thermal expansion behavior. Additionally, the presence of K(+) counterions also reduces the magnitude of thermal expansion.

  10. Experimental evidence for the formation of CoFe2C phase with colossal magnetocrystalline-anisotropy

    SciTech Connect

    El-Gendy, AA; Bertino, M; Clifford, D; Qian, MC; Khanna, SN; Carpenter, EE

    2015-05-25

    Attainment of magnetic order in nanoparticles at room temperature is an issue of critical importance for many different technologies. For ordinary ferromagnetic materials, a reduction in size leads to decreased magnetic anisotropy and results in superparamagnetic relaxations. If, instead, anisotropy could be enhanced at reduced particle sizes, then it would be possible to attain stable magnetic order at room temperature. Herein, we provide experimental evidence substantiating the synthesis of a cobalt iron carbide phase (CoFe2C) of nanoparticles. Structural characterization of the CoFe2C carbide phase was performed by transmission electron microscopy, electron diffraction and energy electron spectroscopy. X-ray diffraction was also performed as a complimentary analysis. Magnetic characterization of the carbide phase revealed a blocking temperature, TB, of 790K for particles with a domain size as small as 5 +/- 1 nm. The particles have magnetocrystalline anisotropy of 4.662 +/- 10 6 J/m(3), which is ten times larger than that of Co nanoparticles. Such colossal anisotropy leads to thermally stable long range magnetic order. Moreover, the thermal stability constant is much larger than that of the commonly used FePt nanoparticles. With thermal stability and colossal anisotropy, the CoFe2C nanoparticles have huge potential for enhanced magnetic data storage devices. (C) 2015 AIP Publishing LLC.

  11. Experimental evidence for the formation of CoFe2C phase with colossal magnetocrystalline-anisotropy

    NASA Astrophysics Data System (ADS)

    El-Gendy, Ahmed A.; Bertino, Massimo; Clifford, Dustin; Qian, Meichun; Khanna, Shiv N.; Carpenter, Everett E.

    2015-05-01

    Attainment of magnetic order in nanoparticles at room temperature is an issue of critical importance for many different technologies. For ordinary ferromagnetic materials, a reduction in size leads to decreased magnetic anisotropy and results in superparamagnetic relaxations. If, instead, anisotropy could be enhanced at reduced particle sizes, then it would be possible to attain stable magnetic order at room temperature. Herein, we provide experimental evidence substantiating the synthesis of a cobalt iron carbide phase (CoFe2C) of nanoparticles. Structural characterization of the CoFe2C carbide phase was performed by transmission electron microscopy, electron diffraction and energy electron spectroscopy. X-ray diffraction was also performed as a complimentary analysis. Magnetic characterization of the carbide phase revealed a blocking temperature, TB, of 790 K for particles with a domain size as small as 5 ± 1 nm. The particles have magnetocrystalline anisotropy of 4.6 ± 2 × 106 J/m3, which is ten times larger than that of Co nanoparticles. Such colossal anisotropy leads to thermally stable long range magnetic order. Moreover, the thermal stability constant is much larger than that of the commonly used FePt nanoparticles. With thermal stability and colossal anisotropy, the CoFe2C nanoparticles have huge potential for enhanced magnetic data storage devices.

  12. Tuning of colossal dielectric constant in gold-polypyrrole composite nanotubes using in-situ x-ray diffraction techniques

    SciTech Connect

    Sarma, Abhisakh; Sanyal, Milan K.

    2014-09-15

    In-situ x-ray diffraction technique has been used to study the growth process of gold incorporated polypyrrole nanotubes that exhibit colossal dielectric constant due to existence of quasi-one-dimensional charge density wave state. These composite nanotubes were formed within nanopores of a polycarbonate membrane by flowing pyrrole monomer from one side and mixture of ferric chloride and chloroauric acid from other side in a sample cell that allows collection of x-ray data during the reaction. The size of the gold nanoparticle embedded in the walls of the nanotubes was found to be dependent on chloroauric acid concentration for nanowires having diameter more than 100 nm. For lower diameter nanotubes the nanoparticle size become independent of chloroauric acid concentration and depends on the diameter of nanotubes only. The result of this study also shows that for 50 nm gold-polypyrrole composite nanotubes obtained with 5.3 mM chloroauric acid gives colossal dielectric constant of about 10{sup 7}. This value remain almost constant over a frequency range from 1Hz to 10{sup 6} Hz even at 80 K temperature.

  13. Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond

    NASA Astrophysics Data System (ADS)

    Takahide, Yamaguchi; Sasama, Yosuke; Tanaka, Masashi; Takeya, Hiroyuki; Takano, Yoshihiko; Kageura, Taisuke; Kawarada, Hiroshi

    2016-10-01

    We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces wherein an ionic-liquid-gated field-effect-transistor technique was used to make hole carriers accumulate. Unexpectedly, the observed magnetoresistance is positive within the range of 2 magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore, we find that (1) the magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; (2) the magnetoresistance is nearly independent of the direction of the applied magnetic field; and (3) for the in-plane field, the magnetoresistance ratio, defined as [ρ (B )-ρ (0 )]/ρ (0 ) , follows a universal function of B /T . These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.

  14. Magnetoresistance, electrical conductivity, and Hall effect of glassy carbon

    SciTech Connect

    Baker, D.F.

    1983-02-01

    These properties of glassy carbon heat treated for three hours between 1200 and 2700/sup 0/C were measured from 3 to 300/sup 0/K in magnetic fields up to 5 tesla. The magnetoresistance was generally negative and saturated with reciprocal temperature, but still increased as a function of magnetic field. The maximum negative magnetoresistance measured was 2.2% for 2700/sup 0/C material. Several models based on the negative magnetoresistance being proportional to the square of the magnetic moment were attempted; the best fit was obtained for the simplest model combining Curie and Pauli paramagnetism for heat treatments above 1600/sup 0/C. Positive magnetoresistance was found only in less than 1600/sup 0/C treated glassy carbon. The electrical conductivity, of the order of 200 (ohm-cm)/sup -1/ at room temperature, can be empirically written as sigma = A + Bexp(-CT/sup -1/4) - DT/sup -1/2. The Hall coefficient was independent of magnetic field, insensitive to temperature, but was a strong function of heat treatment temperature, crossing over from negative to positive at about 1700/sup 0/C and ranging from -0.048 to 0.126 cm/sup 3//coul. The idea of one-dimensional filaments in glassy carbon suggested by the electrical conductivity is compatible with the present consensus view of the microstructure.

  15. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    SciTech Connect

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  16. Low temperature magnetoresistance measurements on bismuth nanowire arrays.

    PubMed

    Kaiser, Ch; Weiss, G; Cornelius, T W; Toimil-Molares, M E; Neumann, R

    2009-05-20

    We present low temperature resistance R(T) and magnetoresistance measurements for Bi nanowires with diameters between 100 and 500 nm, which are close to being single-crystalline. The nanowires were fabricated by electrochemical deposition in pores of polycarbonate membranes. R(T) varies as T(2) in the low temperature range 1.5 Kmagnetoresistance. The transverse magnetoresistance of all samples shows a clear B(1.5) variation. Its size depends strongly on the diameter of the wires but only weakly on temperature. Finally, a steplike increase in the magnetoresistance of our sample with a wire diameter of 100 nm was found and this might be attributed to a transition from one-dimensional to three-dimensional localization.

  17. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications.

    PubMed

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-06-17

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors.

  18. Giant Magnetoresistive (GMR) Sensor Microelectromechanical System (MEMS) Device

    NASA Technical Reports Server (NTRS)

    Ramesham, R.

    1999-01-01

    The measurement of acceleration has been accomplished using several technologies in high-reliability applications such as guidance control, detonation, and shock/vibration measurement. Electromechanical, piezoelectric, piezoresistive, and capacitive acceleration sensors are available and the literature pertinent to giant magnetoresistive sensors (GMR) for the above applications are scanty.

  19. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications

    PubMed Central

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-01-01

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors. PMID:27322277

  20. Estimation of Curie temperature of manganite-based materials for magnetic refrigeration application using hybrid gravitational based support vector regression

    NASA Astrophysics Data System (ADS)

    Owolabi, Taoreed O.; Akande, Kabiru O.; Olatunji, Sunday O.; Alqahtani, Abdullah; Aldhafferi, Nahier

    2016-10-01

    Magnetic refrigeration (MR) technology stands a good chance of replacing the conventional gas compression system (CGCS) of refrigeration due to its unique features such as high efficiency, low cost as well as being environmental friendly. Its operation involves the use of magnetocaloric effect (MCE) of a magnetic material caused by application of magnetic field. Manganite-based material demonstrates maximum MCE at its magnetic ordering temperature known as Curie temperature (TC). Consequently, manganite-based material with TC around room temperature is essentially desired for effective utilization of this technology. The TC of manganite-based materials can be adequately altered to a desired value through doping with appropriate foreign materials. In order to determine a manganite with TC around room temperature and to circumvent experimental challenges therein, this work proposes a model that can effectively estimates the TC of manganite-based material doped with different materials with the aid of support vector regression (SVR) hybridized with gravitational search algorithm (GSA). Implementation of GSA algorithm ensures optimum selection of SVR hyper-parameters for improved performance of the developed model using lattice distortions as the descriptors. The result of the developed model is promising and agrees excellently with the experimental results. The outstanding estimates of the proposed model suggest its potential in promoting room temperature magnetic refrigeration through quick estimation of the effect of dopants on TC so as to obtain manganite that works well around the room temperature.

  1. Structural and magnetotransport properties of the Y doped A-site deficient double layered manganites La1.2-x□0.2YxCa1.6Mn2O7

    NASA Astrophysics Data System (ADS)

    Mahamdioua, N.; Amira, A.; Altintas, S. P.; Varilci, A.; Terzioglu, C.

    2016-08-01

    We present structural, magnetic and electrical properties of the polycrystalline A-site-deficient yttrium doped double layered manganites La1.2-x□0.2YxCa1.6Mn2O7 (x=0.2, 0.3 and 0.4) prepared by a solid state reaction method. The samples crystallize in the tetragonal structure with the space group I4/mmm. Doping with Y decreases the cell parameters and causes a decrease of the metal-insulator transition temperature. The same evolution with doping is also seen for the deduced Curie temperature from susceptibility curves which present a clear paramagnetic-ferromagnetic transition. The significant positive intrinsic magnetoresistance, shown in all samples, reaches 85% at 122 K under 7 T for 0.3 doped sample and can be attributed to the suppression of spin fluctuations via aligning the spins under external magnetic field, while the extrinsic one is attributed to the inter-grain spin-polarized tunneling across the grain boundaries. The simulation of the resistivity curves in the entire temperature range show that the percolation model is suitable to fit our results. The applied magnetic field increases the density of states near the Fermi level, which is in accordance with the observed decrease of resistivity.

  2. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

    PubMed Central

    Yang, D. Z.; Wang, T.; Sui, W. B.; Si, M. S.; Guo, D. W.; Shi, Z.; Wang, F. C.; Xue, D. S.

    2015-01-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature. PMID:26323495

  3. Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO{sub 2}

    SciTech Connect

    Mandal, Suman Pal, Somnath; Hazarika, Abhijit; Kundu, Asish K.; Menon, Krishnakumar S. R.; Rioult, Maxime; Belkhou, Rachid

    2016-08-29

    Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO{sub 2} have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

  4. Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO2

    NASA Astrophysics Data System (ADS)

    Mandal, Suman; Pal, Somnath; Kundu, Asish K.; Menon, Krishnakumar S. R.; Hazarika, Abhijit; Rioult, Maxime; Belkhou, Rachid

    2016-08-01

    Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO2 have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

  5. Oxygen Doping Study of Cuprate/Manganite Thin-Film Heterostructures

    NASA Astrophysics Data System (ADS)

    Zhang, Hao; Wei, J. Y. T.; Gong, Wen He; Botton, Gianluigi A.

    2011-03-01

    Recent studies of thin-film heterostructures comprising superconducting cuprates and ferromagnetic manganites have revealed a range of novel physical phenomena. These phenomena are believed to involve complex interfacial interactions between competing order parameters, and appear to be highly sensitive to carrier doping. To further examine these phenomena, we carry out a systematic oxygen-doping study of cuprate/manganite multilayer thin films, grown epitaxially by pulsed laser-ablated deposition. Our samples are characterized by electrical transport and magnetization measurements, as well as x-ray diffraction and several microscopy probes including SEM and TEM. We also make cation substitution in the cuprate layer, in order to study the effects of carrier doping across the interface. Work supported by NSERC, CFI/OIT and the Canadian Institute for Advanced Research.

  6. Interfacial phase competition induced Kondo-like effect in manganite-insulator composites

    NASA Astrophysics Data System (ADS)

    Lin, Ling-Fang; Wu, Ling-Zhi; Dong, Shuai

    2016-12-01

    A Kondo-like effect, namely, the upturn of resistivity at low temperatures, is observed in perovskite manganite when nonmagnetic insulators are doped as secondary phase. In this paper, the low-temperature resistivity upturn effect has been argued to originate from interfacial magnetic phase reconstruction. Heisenberg spin lattices have been simulated using the Monte Carlo method to reveal phase competition around secondary phase boundary, namely, manganite-insulator boundary that behaves with a weak antiferromagnetic tendency. Moreover, the resistor network model based on double-exchange conductive mechanism reproduces the low-temperature resistivity upturn effect. Our work provides a reasonable physical mechanism to understand the novel transport behaviors in microstructures of correlated electron systems.

  7. Magnetical and electrical tuning of transient photovoltaic effects in manganite-based heterojunctions.

    PubMed

    Ni, Hao; Yue, Zengji; Zhao, Kun; Xiang, Wenfeng; Zhao, Songqing; Wang, Aijun; Kong, Yu-Chau; Wong, Hong-Kuen

    2012-05-07

    Magnetically and bias current tunable transient photovoltaic (TPV) responses have been investigated in a manganite-based heterojunction composed of a La2/3Ca1/3MnO3 film and an n-type Si substrate at ambient temperature. Under irradiation of 248 nm pulsed laser with 20 ns duration the TPV peak values can be modulated in a range of -125 to 138 mV when the applied magnetic field perpendicular to the interface changes from -6.4 to + 6.4 kOe, and the relative variations (TPV(H) - TPV(0))/TPV(0) reach up to about 1000%. In addition, TPV responses can be also affected by bias current, and the photoresponse peaks change from positive to negative with the currents from -350 to 350 μA. These results indicate that the manganite-based heterojunction can be used for magnetically and electrically tunable ultraviolet photodetectors.

  8. Direct Imaging of Dynamic Glassy Behavior in a Strained Manganite Film.

    PubMed

    Kundhikanjana, Worasom; Sheng, Zhigao; Yang, Yongliang; Lai, Keji; Ma, Eric Yue; Cui, Yong-Tao; Kelly, Michael A; Nakamura, Masao; Kawasaki, Masashi; Tokura, Yoshinori; Tang, Qiaochu; Zhang, Kun; Li, Xinxin; Shen, Zhi-Xun

    2015-12-31

    Complex many-body interaction in perovskite manganites gives rise to a strong competition between ferromagnetic metallic and charge-ordered phases with nanoscale electronic inhomogeneity and glassy behaviors. Investigating this glassy state requires high-resolution imaging techniques with sufficient sensitivity and stability. Here, we present the results of a near-field microwave microscope imaging on the strain-driven glassy state in a manganite film. The high contrast between the two electrically distinct phases allows direct visualization of the phase separation. The low-temperature microscopic configurations differ upon cooling with different thermal histories. At sufficiently high temperatures, we observe switching between the two phases in either direction. The dynamic switching, however, stops below the glass transition temperature. Compared with the magnetization data, the phase separation was microscopically frozen, while spin relaxation was found in a short period of time.

  9. Current-pulse-induced enhancement of transient photodetective effect in tilted manganite film.

    PubMed

    Ni, H; Zhao, K; Xi, J F; Feng, X; Xiang, W F; Zhao, S Q; Kong, Y-C; Wong, H K

    2012-12-17

    A current-pulse-induced enhancement effect of transient photovoltage has been discovered in tilted manganite La(2/3)Ca(1/3)MnO(3) film at room temperature. Here, by applying a pulsed current stimulus before pulse laser irradiation, we observed a significant enhancement of more than 50% in photovoltaic sensitivity. The current-pulse-induced photovoltaic enhancement can be tuned not only by the stimulating current value but also by the stimulating time. Such enhancement is time-sensitive and reproducible. This electrically induced effect, observed at room temperature, has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in photodetectors.

  10. Direct Imaging of Dynamic Glassy Behavior in a Strained Manganite Film

    NASA Astrophysics Data System (ADS)

    Kundhikanjana, Worasom; Sheng, Zhigao; Yang, Yongliang; Lai, Keji; Ma, Eric Yue; Cui, Yong-Tao; Kelly, Michael A.; Nakamura, Masao; Kawasaki, Masashi; Tokura, Yoshinori; Tang, Qiaochu; Zhang, Kun; Li, Xinxin; Shen, Zhi-Xun

    2015-12-01

    Complex many-body interaction in perovskite manganites gives rise to a strong competition between ferromagnetic metallic and charge-ordered phases with nanoscale electronic inhomogeneity and glassy behaviors. Investigating this glassy state requires high-resolution imaging techniques with sufficient sensitivity and stability. Here, we present the results of a near-field microwave microscope imaging on the strain-driven glassy state in a manganite film. The high contrast between the two electrically distinct phases allows direct visualization of the phase separation. The low-temperature microscopic configurations differ upon cooling with different thermal histories. At sufficiently high temperatures, we observe switching between the two phases in either direction. The dynamic switching, however, stops below the glass transition temperature. Compared with the magnetization data, the phase separation was microscopically frozen, while spin relaxation was found in a short period of time.

  11. Hexagonal frustrated RMnO3 manganites (R = Y, Lu) under high pressure

    NASA Astrophysics Data System (ADS)

    Kozlenko, D. P.; Kichanov, S. E.; Lee, S.; Park, J.-G.; Glazkov, V. P.; Savenko, B. N.

    2007-05-01

    The crystalline and magnetic structures of YMnO3 and LuMnO3 hexagonal manganites under pressures of 0 6 GPa and in the temperature range 10 295 K have been investigated by neutron diffraction. Application of pressure leads to a significant decrease in the ordered magnetic moment of Mn ions (at T = 10 K) from 3.27 (0 GPa) to 1.52 μB (5 GPa) for YMnO3 and from 2.48 (0 GPa) to 1.98 μB (6 GPa) for LuMnO3. Under high pressures, spin reorientation of Mn magnetic moments and a change in the symmetry of the antiferromagnetic structure are observed in YMnO3. The relationship between the triangular lattice distortion parameter and the symmetry of the triangular antiferromagnetic state of RMnO3 hexagonal manganites is discussed.

  12. High pressure Raman study of La1-xCaxMnO3-δ manganites

    NASA Astrophysics Data System (ADS)

    Sacchetti, A.; Corridoni, T.; Arcangeletti, E.; Postorino, P.

    2008-12-01

    We report a high-pressure Raman study on two members of the La1-xCaxMnO3-δ manganite family (x = 0.20, δ = 0 and δ = 0.08). The results obtained for the δ = 0 sample show a different behavior in the low and high pressure regime which is ascribed to the onset of a new pressure-activated interaction previously invoked in other manganite compounds. The comparison of our results with literature data gives further support to the identification of the Jahn-Teller sensitive stretching mode and shows that pressure-induced octahedral symmetrization is more effective in systems exhibiting a lower metallic character. On the contrary the new interaction sets in at a pressure which decreases on increasing the metallic character of the system indicating an important role of the Mn-Mn hopping integral in its activation.

  13. Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide

    NASA Astrophysics Data System (ADS)

    Niu, Q.; Yu, W. C.; Yip, K. Y.; Lim, Z. L.; Kotegawa, H.; Matsuoka, E.; Sugawara, H.; Tou, H.; Yanase, Y.; Goh, Swee K.

    2017-06-01

    In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

  14. Silica-coated manganite and Mn-based ferrite nanoparticles: a comparative study focused on cytotoxicity

    NASA Astrophysics Data System (ADS)

    Kaman, Ondřej; Dědourková, Tereza; Koktan, Jakub; Kuličková, Jarmila; Maryško, Miroslav; Veverka, Pavel; Havelek, Radim; Královec, Karel; Turnovcová, Karolína; Jendelová, Pavla; Schröfel, Adam; Svoboda, Ladislav

    2016-04-01

    Magnetic oxide nanoparticles provide a fascinating tool for biological research and medicine, serving as contrast agents, magnetic carriers, and core materials of theranostic systems. Although the applications rely mostly on iron oxides, more complex oxides such as perovskite manganites may provide a much better magnetic performance. To assess the risk of their potential use, in vitro toxicity of manganite nanoparticles was thoroughly analysed and compared with another prospective system of Mn-Zn ferrite nanoparticles. Magnetic nanoparticles of La0.63Sr0.37MnO3 manganite were prepared by two distinct methods, namely the molten salt synthesis and the traditional sol-gel route, whereas nanoparticles of Mn0.61Zn0.42Fe1.97O4 ferrite, selected as a comparative material, were synthesized by a new procedure under hydrothermal conditions. Magnetic cores were coated with silica and, moreover, several samples of manganite nanoparticles with different thicknesses of silica shell were prepared. The size-fractionated and purified products were analysed using transmission electron microscopy, dynamic light scattering, measurement of the zeta-potential dependence on pH, IR spectroscopy, and SQUID magnetometry. The silica-coated products with accurately determined concentration by atomic absorption spectroscopy were subjected to a robust evaluation of their cytotoxicity by four different methods, including detailed analysis of the concentration dependence of toxicity, analysis of apoptosis, and experiments on three different cell lines. The results, comparing two manganese-containing systems, clearly indicated superior properties of the Mn-Zn ferrite, whose silica-coated nanoparticles show very limited toxic effects and thus constitute a promising material for bioapplications.

  15. Observation of the structural phase transition in manganite films by magneto-optical imaging.

    SciTech Connect

    Crabtree, G. W.; Lin, Y.; Miller, D. J.; Nikitenko, V. I.; Vlasko-Vlasov, V. K.; Welp, U.

    1999-08-31

    A high-resolution magneto-optical imaging technique is used to reveal the formation of twins occurring during a martensitic phase transition at {approximately}105K in LCMO films grown on STO substrates. The magnetic contrast arises due to the magneto-elastic tilts of the Mn - magnetic moments in the twins. Different magnetic structures are found in LCMO films grown on MgO, NGO, and LAO substrates showing the importance of the substrate material for the manganite film properties.

  16. Structural and electrical studies of sol-gel synthesized nanocrystalline hexagonal yttrium iron manganite ceramics

    NASA Astrophysics Data System (ADS)

    Touthang, Jangkhohao; Maisnam, Mamata

    2017-03-01

    Hexagonal yttrium manganites, YMnO3, are interesting materials for their multiferroic behavior. Substituting suitable cations either at the Y-site or Mn-site offers great opportunities to produce a variety of manganites and tune their properties. Nanocrystalline yttrium iron manganites with the compositional formula Y1‑xFexMnO3, x = 0.0, 0.10, 0.15, 0.20 and 0.25, were synthesized by sol-gel autocombustion method. The prepared samples were heated at 1100∘C for 1 h. Another set of samples with compositional formula YFexMn1‑xO3, x = 0.0, 0.10, 0.15, 0.20 and 0.25, were also synthesized by the same method and heated at 1100∘C for 1 h. Various characterizations were done on these manganite systems synthesized by substituting iron at different sites. X-ray diffraction (XRD) technique studied the structure of the samples and analysis of XRD patterns confirmed the formation of hexagonal phase in the samples. Structural parameters such as lattice constants, crystallite size, theoretical density, etc. were determined using the XRD data. The unit cell dimensions have been found to agree with the standard data and the Debye-Scherrer crystallite size obtained from XRD data ranges from 42 nm to 77 nm. The room temperature frequency variations of electrical properties such as dielectric constant, dielectric loss and AC conductivity were measured in the range of 100 Hz-2 MHz and the variations showed a dispersive behavior for all the samples. The various measurements and the results obtained were studied and discussed in the paper.

  17. Ag-doped manganite nanoparticles: new materials for temperature-controlled medical hyperthermia.

    PubMed

    Melnikov, O V; Gorbenko, O Yu; Markelova, M N; Kaul, A R; Atsarkin, V A; Demidov, V V; Soto, C; Roy, E J; Odintsov, B M

    2009-12-15

    The purpose of this study was to introduce newly synthesized nanomaterials as an alternative to superparamagnetic ironoxide based particles (SPIO) and thus to launch a new platform for highly controllable hyperthermia cancer therapy and imaging. The new material that forms the basis for this article is lanthanum manganite particles with silver ions inserted into the perovskite lattice: La(1-x)Ag(x)MnO(3+delta). Adjusting the silver doping level, it is possible to control the Curie temperature (T(c)) in the hyperthermia range of interest (41-44 degrees C). A new class of nanoparticles based on silver-doped manganites La(1-x)Ag(x)MnO(3+delta) is suggested. New nanoparticles are stable, and their properties were not affected by the typical ambient conditions in the living tissue. It is possible to monitor the particle uptake and retention by MRI. When these particles are placed into an alternating magnetic field, their temperature increases to the definite value near T(c) and then remains constant if the magnetic field is maintained. During the hyperthermia procedure, the temperature can be restricted, thereby preventing the necrosis of normal tissue. A new class of nanoparticles based on silver-doped manganites La(1-x)Ag(x)MnO(3+delta) was suggested. Ag-doped perovskite manganites particles clearly demonstrated the effect of adjustable Curie temperature necessary for highly controllable cellular hyperthermia. The magnetic relaxation properties of the particles are comparable with that of SPIO, and so we were able to monitor the particle movement and retention by MRI. Thus, the new material combines the MRI contrast enhancement capability with targeted hyperthermia treatment.

  18. Magnetoresistance in organic light-emitting diode structures under illumination

    NASA Astrophysics Data System (ADS)

    Desai, P.; Shakya, P.; Kreouzis, T.; Gillin, W. P.

    2007-12-01

    We have investigated the effect of illumination on the organic magnetoresistance (OMR) in organic light-emitting diode (OLED) structures. The results show that it is possible to obtain OMR at voltages below “turn-on,” where no OMR was visible for devices operated in the dark. The photoinduced OMR has a field dependence that is identical to that obtained for OLEDs containing very thin layers, where triplet dissociation at the cathode was a major component of the OMR. At voltages around the open circuit voltage, where the current through the device is very small, very large OMRs of ˜300% can be observed. The results support our proposed model for organic magnetoresistance as being caused in part by the interaction of free carriers with triplet excitons within the device. The results suggest that the introduction of a low field magnet could provide a simple means of improving the efficiency of organic photovoltaic cells.

  19. Insensitivity of tunneling anisotropic magnetoresistance to non-magnetic electrodes

    SciTech Connect

    Wang, Y. Y.; Song, C. Wang, G. Y.; Zeng, F.; Pan, F.

    2013-11-11

    Ferromagnetic electrodes play a crucial role in magnetoresistance effect and spin injection, whereas the essential features of non-magnetic metal electrodes in spintronics are commonly ignored except for their electrical conductivity. Here, we verify that the room-temperature tunneling anisotropic magnetoresistance (TAMR) behavior in antiferromagnet-based [Pt/Co]/IrMn/AlO{sub x}/metal (metal = Pt, Au, Cu, Al) junctions is insensitive to the top metal electrodes. Similar out-of-plane signals are detected for different electrodes, in contrast to the varied shapes of in-plane TAMR curves which are most likely attributed to the differences in the multidomain structure of the magnetic electrode. This would add a different dimension to spintronics.

  20. Geometrically enhanced extraordinary magnetoresistance in semiconductor-metal hybrids

    NASA Astrophysics Data System (ADS)

    Hewett, T. H.; Kusmartsev, F. V.

    2010-12-01

    Extraordinary magnetoresistance (EMR) arises in hybrid systems consisting of semiconducting material with an embedded metallic inclusion. We have investigated such systems with the use of finite-element modeling, with our results showing good agreement to existing experimental data. We show that this effect can be dramatically enhanced by over four orders of magnitude as a result of altering the geometry of the conducting region. The significance of this result lies in its potential application to EMR magnetic field sensors utilizing more familiar semiconducting materials with nonoptimum material parameters, such as silicon. Our model has been extended further with a geometry based on the microstructure of the silver chalcogenides, consisting of a randomly sized and positioned metallic network with interspersed droplets. This model has shown a large and quasilinear magnetoresistance analogous to experimental findings.