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Sample records for common-cation ii-vi heterostructures

  1. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE PAGES

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore » can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  2. Transforming common III-V/II-VI insulating building blocks into topological heterostructure via the intrinsic electric polarization

    NASA Astrophysics Data System (ADS)

    Zunger, Alex; Zhang, Xiuwen; Abdalla, Leonardo; Liu, Qihang

    Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show how a heterovalent superlattice made of common semiconductor building blocks can transform its non-TI components into a topological heterostructure. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. We demonstrate this paradigm of designing TIs from ordinary semiconductors via first-principle calculations on III-V/II-VI superlattice InSb/CdTe. We illustrate the relationship between the interfacial stability and the topological transition, finding a ``window of opportunity'' where both conditions can be optimized. This work illustrates the general principles of co-evaluation of TI functionality with thermodynamic stability as a route of identifying realistic combination of common insulators that could produce topological heterostructures. This work was supported by Basic Energy Science, MSE division (Grant DE-FG02-13ER46959).

  3. Spectral sensitivity of p-Cu{sub 1.8}S/n{sup -}-ZnS/n-(II-VI) heterostructures

    SciTech Connect

    Komaschenko, V. N. Kolezhuk, K. V.; Yaroshenko, N. V.; Sheremetova, G. I.; Bobrenko, Yu. N.

    2006-03-15

    Photosensitivity of multilayered p-Cu{sub 1.8}S/n{sup -}-(II-VI)/n-(II-VI) heterostructures beyond the fundamental-absorption edge of the wide-gap component is studied experimentally, and a simple model is suggested as an explanation of this photosensitivity. It is established that an effective method for reducing the photosensitivity of the structures beyond the ultraviolet spectral region consists in decreasing the probability of dominant tunneling processes, by increasing the thickness of the wide-gap layer, giving rise to a blocking barrier for photogenerated minority charge carriers. It is shown that the p-Cu{sub 1.8}S/n{sup -}-ZnS/n-CdSe heterostructures are promising for the development of efficient 'solar-blind' detectors of ultraviolet radiation.

  4. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    SciTech Connect

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles method can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.

  5. General synthetic approach to heterostructured nanocrystals based on noble metals and I-VI, II-VI, and I-III-VI metal chalcogenides.

    PubMed

    Liu, Minghui; Zeng, Hua Chun

    2014-08-19

    Solid metal precursors (alloys or monometals) can serve both as a starting template and as a source material for chemical transformation to metal chalcogenides. Herein, we develop a simple solution-based strategy to obtain highly monodisperse noble-metal-based heterostructured nanocrystals from such precursor seeds. By utilizing chemical and structural inhomogeneity of these metal seeds, in this work, we have synthesized a total of five I-VI (Ag2S, Ag2Se, Ag3AuS2, Ag3AuSe2, and Cu9S5), three II-VI (CdS, CdSe, and CuSe), and four I-III-VI (AgInS2, AgInSe2, CuInS2, and CuInSe2) chalcogenides, together with their fifteen associated heterodimers (Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, Au-Ag3AuSe2, Au-AgInS2, Au-AgInSe2, Au-CdS, Au-CdSe, Ag-Ag2S, Ag-AgInS2, Au-Cu9S5, Au-CuInS2, Au-CuSe, Au-CuInSe2, and Pt-AgInS2) to affirm the process generality. Briefly, by adding elemental sulfur or selenium to AuAg alloy seeds and tuning the reaction conditions, we can readily obtain phase-pure Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, and Au-Ag3AuSe2 heterostructures. Similarly, we can also fabricate Au-AgInS2 and Au-AgInSe2 heterostructures from the AuAg seeds by adding sulfur/selenium and indium precursors. Furthermore, by partial or full conversion of Ag seeds, we can prepare both single-phase Ag chalcogenide nanocrystals and Ag-based heterostructures. To demonstrate wide applicability of this strategy, we have also synthesized Au-based binary and ternary Cu chalcogenide (Au-Cu9S5, Au-CuSe, Au-CuInS2, and Au-CuInSe2) heterostructures from alloy seeds of AuCu and Pt chalcogenides (e.g., Pt-AgInS2) from alloy seeds of PtAg. The structure and composition of the above products have been confirmed with X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and energy-dispersive X-ray spectroscopy methods. A kinetic investigation of the formation mechanism of these heterostructures is brought forward using Au-AgInS2 and Ag-CuInS2 as model examples.

  6. Atomic-Scale Characterization of II-VI Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Smith, David J.

    2013-11-01

    Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.

  7. II-VI widegap superlattices

    NASA Astrophysics Data System (ADS)

    Taguchi, T.; Yamada, Y.; Endoh, Y.; Nozue, Y.; Mullins, J. T.; Ohno, T.; Masumoto, Y.; Takeda, S.

    We review our recent results of the excitonic properties in ZnSeZnS and Cd xZn 1-xSZnS strained-layer superlattices (SLSs). The most important physical insights in the II-VI widegap superlattices are to understand the relationship between the optical properties of quasi-two-dimensional exciton and strain because the well layer frequently receives biaxial compression or tension. The strain thus causes the significant shifts of the bandgap and splitting of the valence band. Semi-quantative calculations lead to an expectation that ZnSeZnS SLS always exhibits a type I band lineup within 100 Å thicknesses of the ZnSe well at a constant ZnS barrier width of several tens angstrom. This is in good agreement with the experimental results of exciton absorption and its luminescence excitation spectra. The Cd 0.3Zn 0.7SZnS SLSs with a range of well widths can produce intense excitonic emissions around 3.4 eV at room temperature due to the quantum confinement of excitons in the ternary CdZnS well. In order to elucidate localisation and relaxation processes of excitons, we have for the first time reported a multiple-LO-phonon emission process in the excitation spectra. The electric-field studies suggest that the concomitant decrease in intensity and the energy downshift of the exciton line may originate from the quantum confined Stark effect.

  8. Recent Progress in Photocatalysis Mediated by Colloidal II-VI Nanocrystals

    PubMed Central

    Wilker, Molly B; Schnitzenbaumer, Kyle J; Dukovic, Gordana

    2012-01-01

    The use of photoexcited electrons and holes in semiconductor nanocrystals as reduction and oxidation reagents is an intriguing way of harvesting photon energy to drive chemical reactions. This review focuses on recent research efforts to understand and control the photocatalytic processes mediated by colloidal II-VI nanocrystalline materials, such as cadmium and zinc chalcogenides. First, we highlight how nanocrystal properties govern the rates and efficiencies of charge-transfer processes relevant to photocatalysis. We then describe the use of nanocrystal catalyst heterostructures for fuel-forming reactions, most commonly H2 generation. Finally, we review the use of nanocrystal photocatalysis as a synthetic tool for metal–semiconductor nano-heterostructures. PMID:24115781

  9. Chemistry of the Colloidal Group II-VI Nanocrystal Synthesis

    SciTech Connect

    Liu, Haitao

    2007-05-17

    In the last two decades, the field of nanoscience andnanotechnology has witnessed tremendous advancement in the synthesis andapplication of group II-VI colloidal nanocrystals. The synthesis based onhigh temperature decomposition of organometallic precursors has becomeone of the most successful methods of making group II-VI colloidalnanocrystals. This methodis first demonstrated by Bawendi and coworkersin 1993 to prepare cadmium chalcogenide colloidal quantum dots and laterextended by others to prepare other group II-VI quantum dots as well asanisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod.This dissertation focuses on the chemistry of this type of nanocrystalsynthesis. The synthesis of group II-VI nanocrystals was studied bycharacterizing the molecular structures of the precursors and productsand following their time evolution in the synthesis. Based on theseresults, a mechanism was proposed to account for the 2 reaction betweenthe precursors that presumably produces monomer for the growth ofnanocrystals. Theoretical study based on density functional theorycalculations revealed the detailed free energy landscape of the precursordecomposition and monomerformation pathway. Based on the proposedreaction mechanism, a new synthetic method was designed that uses wateras a novel reagent to control the diameter and the aspect ratio of CdSeand CdS nanorods.

  10. Taming excitons in II-VI semiconductor nanowires and nanobelts

    NASA Astrophysics Data System (ADS)

    Xu, Xinlong; Zhang, Qing; Zhang, Jun; Zhou, Yixuan; Xiong, Qihua

    2014-10-01

    Excitons are one of the most important fundamental quasi-particles, and are involved in a variety of processes forming the basis of a wide range of opto-electronic and photonic devices based on II-VI semiconductor nanowires and nanobelts, such as light-emitting diodes, photovoltaic cells, photodetectors and nanolasers. A clear understanding of their properties and unveiling the potential engineering for excitons is of particular importance for the design and optimization of nanoscale opto-electronic and photonic devices. Herein, we present a comprehensive review on discussing the fundamental behaviours of the excitons in one-dimensional (1D) II-VI semiconductor nanomaterials (nanowires and nanobelts). We will start with a focus on the unique properties (origin, generation, etc) and dynamics of excitons and exciton complexes in the II-VI semiconductor nanowires and nanobelts. Then we move to the recent progress on the excitonic response in 1D nanomaterials and focus on the tailoring and engineering of excitonic properties through rational controlling of the physical parameters and conditions, intrinsically and extrinsically. These include (1) exciton-exciton interaction, which is important for 1D nanomaterial nanolasing; (2) exciton-phonon interaction, which has interesting applications for laser cooling; and (3) exciton-plasmon interaction, which is the cornerstone towards the realization of plasmonic lasers. The potential of electric field, morphology and size control for excitonic properties is also discussed. Unveiling and controlling excitonic properties in II-VI semiconductor nanowires and nanobelts would promote the development of 1D nanoscience and nanotechnology.

  11. Photophysical Properties of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gong, Ke

    As it is well known, semiconductor nanocrystals (also called quantum dots, QDs) are being actively pursued for use in many different types of luminescent optical materials. These materials include the active media for luminescence downconversion in artificial lighting, lasers, luminescent solar concentrators and many other applications. Chapter 1 gives general introduction of QDs, which describe the basic physical properties and optical properties. Based on the experimental spectroscopic study, a semiquantitative method-effective mass model is employed to give theoretical prediction and guide. The following chapters will talks about several topics respectively. A predictive understanding of the radiative lifetimes is therefore a starting point for the understanding of the use of QDs for these applications. Absorption intensities and radiative lifetimes are fundamental properties of any luminescent material. Meantime, achievement of high efficiency with high working temperature and heterostructure fabrication with manipulation of lattice strain are not easy and need systematic investigation. To make accurate connections between extinction coefficients and radiative recombination rates, chapter 2 will consider three closely related aspects of the size dependent spectroscopy of II-VI QDs. First, it will consider the existing literature on cadmium selenide (CdSe) QD absorption spectra and extinction coefficients. From these results and fine structure considerations Boltzmann weighted radiative lifetimes are calculated. These lifetimes are compared to values measured on very high quality CdSe and CdSe coated with zinc selenide (ZnSe) shells. Second, analogous literature data are analyzed for cadmium telluride (CdTe) nanocrystals and compared to lifetimes measured for very high quality QDs. Furthermore, studies of the absorption and excitation spectra and measured radiative lifetimes for CdTe/CdSe Type-II core/shell QDs are reported. These results are also analyzed in

  12. Monolayer II-VI semiconductors: A first-principles prediction

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Li, Xian-Bin; Chen, Nian-Ke; Xie, Sheng-Yi; Tian, Wei Quan; Chen, Yuanping; Xia, Hong; Zhang, S. B.; Sun, Hong-Bo

    2015-09-01

    A systematic study of 32 honeycomb monolayer II-VI semiconductors is carried out by first-principles methods. While none of the two-dimensional (2D) structures can be energetically stable, it appears that BeO, MgO, CaO, ZnO, CdO, CaS, SrS, SrSe, BaTe, and HgTe honeycomb monolayers have a good dynamic stability. The stability of the five oxides is consistent with the work published by Zhuang et al. [Appl. Phys. Lett. 103, 212102 (2013), 10.1063/1.4831972]. The rest of the compounds in the form of honeycomb are dynamically unstable, revealed by phonon calculations. In addition, according to the molecular dynamic (MD) simulation evolution from these unstable candidates, we also find two extra monolayers dynamically stable, which are tetragonal BaS [P 4 /n m m (129 ) ] and orthorhombic HgS [P 21/m (11 ) ] . The honeycomb monolayers exist in the form of either a planar perfect honeycomb or a low-buckled 2D layer, all of which possess a band gap and most of them are in the ultraviolet region. Interestingly, the dynamically stable SrSe has a gap near visible light, and displays exotic electronic properties with a flat top of the valence band, and hence has a strong spin polarization upon hole doping. The honeycomb HgTe has recently been reported to achieve a topological nontrivial phase under appropriate in-plane tensile strain and spin-orbital coupling (SOC) [J. Li et al., arXiv:1412.2528]. Some II-VI partners with less than 5 % lattice mismatch may be used to design novel 2D heterojunction devices. If synthesized, potential applications of these 2D II-VI families could include optoelectronics, spintronics, and strong correlated electronics.

  13. Optical dispersion of ternary II-VI semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Liu, Xinyu; Furdyna, J. K.

    2004-06-01

    The wavelength dependence of the refractive indices n of a series of II-VI ternary alloys—ZnCdSe, ZnBeSe, ZnMgSe, ZnMnSe, ZnCdTe, ZnMnTe, ZnMgSe, and ZnSeTe—were measured at frequencies below their respective energy gaps using the combined techniques of optical reflectivity and the prism coupler method. To facilitate the analysis of the results—including those obtained in the wavelength region near the fundamental energy gap—we have modified the semiempirical single-effective-oscillator (SEO) model of n by introducing an additional term that explicitly accounts for interband transitions at the fundamental gap. Using the SEO model modified in this manner to fit the wavelength dependence of n, a set of semiempirical parameters was established for the above ternary II-VI-based alloys, where the fitting parameters for each alloy family are themselves expressed as functions of the alloy composition. The availability of these parameters makes it possible to calculate the index of refraction of any given II-VI ternary alloy for any composition and at any wavelength. Furthermore, these parameters provide valuable physical insights, such as the relationship between the covalency (or ionicity) of the material and its refractive index. In addition to its fundamental usefulness, this approach can—by appropriate extrapolation—also be used for obtaining the dispersion properties for "hypothetical" zinc blende compounds that do not form under equilibrium crystal growth conditions (such as MnTe, MnSe, or BeSe).

  14. Activation of shallow dopants in II-VI compounds

    SciTech Connect

    Walukiewicz, W.

    1995-08-01

    The amphoteric native defect model is applied to the understanding of the variations in the dopant activation efficiency in II-VI compounds. It is shown that the location of the common energy reference, the Fermi level stabilization energy, relative to the band edges can be used to determine the doping induced reduction of the formation energy and the enhancement of the concentration of compensating native defects. The model is applied to the most extensively studied compound semiconductors as well as to ternary and quaternary alloys. The effects of the compound ionicity on the dopant activation are briefly discussed.

  15. Bond orbital modelling of heterostructures

    SciTech Connect

    Ünlü, Hilmi

    2016-03-25

    We propose a non-orthogonal sp{sup 3} hybrid bond orbital model to determine the electronic properties of semiconductor heterostructures. The model considers the non-orthogonality of sp{sup 3} hybrid states of nearest neighboring adjacent atoms using the intra-atomic Coulomb interactions corrected Hartree-Fock atomic energies and metallic contribution to calculate the valence band width energies of group IV elemental and group III-V and II-VI compound semiconductors without any adjustable parameter.

  16. II-VI Materials-Based High Performance Intersubband Devices

    NASA Astrophysics Data System (ADS)

    Ravikumar, Arvind Pawan

    Mid-infrared (mid-IR) light is of vital technological importance because of its application in trace-gas absorption spectroscopy, imaging, free-space communication or infrared countermeasures. Thus the ability to generate and detect mid-IR light at low cost and preferably, at room temperature is of utmost importance. High performance quantum cascade (QC) lasers - mid-IR light sources based on optical transitions in thin quantum wells, and intersubband infrared detectors - namely the quantum well infrared photodetectors (QWIPs) and quantum cascade detectors (QCDs), have rapidly advanced, due to excellent material quality of III-V materials. In spite of this tremendous success, there lie challenges such as lack of efficient short-wavelength emitters or broadband detectors - challenges that arise from intrinsic materials properties. As a central theme in this thesis, we look at a new class of materials, the II-VI based ZnCdSe/ZnCdMgSe system, to close technological gaps and develop high performance infrared light sources and detectors in the entire mid-IR regime. To that end, we first demonstrate the flexibility that the combination of II-VI materials and band structure engineering allows by developing various QWIPs, QCDs and QC emitters at different wavelengths, not easily achieved by other materials. The performance of these first-of-their-kind detectors is already comparable to existing commercial solutions. To fully realize the potential of this new material system, we also developed a room-temperature broadband infrared detector detecting between 3 and 6 mum with record responsivity. With this technology, it is now possible to monolithically integrate high performance mid-IR lasers and detectors for on-chip applications. One of the challenges with all intersubband detectors is that they do not absorb normally incident light, like most conventional detectors. In order to make intersubband detectors attractive to commercial exploration, we develop a novel method to

  17. II-VI Narrow-Bandgap Semiconductors for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Baker, Ian

    The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

  18. II-VI wide band gap semiconductors under hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Baquero, R.; Decoss, R.; Olguin, D.

    1993-08-01

    We set an analytical expression for the gap as a function of hydrostatic deformation, E(sub g)(epsilon), by diagonalizing in Gamma the corresponding empirical tight-binding Hamiltonian (ETBH). In the ETBH we use the well known d(exp -2) Harrison scaling law (HSL) to adjust the TB parameter (TBP) to the changes in interatomic distances. We do not consider cation-anion charge transfer. We calculate E(sub g)(epsilon) for wide band gap II-VI semiconductors with zincblende crystal structure for deformations under pressure up to -5 percent. Results are in good agreement with experiment for the compounds of lower ionicity but deviate as the ionicity of the compound increases. This is due to the neglect of charge transfer which should be included self-consistently. Within the approximation we always find a positive second derivative of E(sub g)(epsilon) with respect to epsilon, independent of the material. Furthermore, the inclusion of deviations from HSL appear to be unimportant to this problem.

  19. Multi-crystalline II-VI based multijunction solar cells and modules

    DOEpatents

    Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

    2015-06-30

    Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

  20. PAC and XPS studies of II-VI compounds

    NASA Astrophysics Data System (ADS)

    Swanson, M. L.; Hughes, W. C.; Austin, J. C.; Choi, S. S.

    The perturbed angular correlation (PAC) method has considerable potential for studying near-surface defects of materials on a microscopic scale, especially in combination with standard surface techniques. We have characterized the near-surface and surface regions of II-VI compounds using PAC and X-ray photoelectron spectroscopy (XPS). PAC was used to identify point defect complexes containing the radioactive In-111 probe atoms, which were diffused into Cd(0.96)Zn(0.04)Te, Cd(0.8)Mn(0.2)Te, and Hg(0.79)Cd(0.21)Te (MCT) samples under vacuum from 200 to 550 C. After the Cd(Zn)Te samples were annealed at 450 C for 30 min, 60% of the In atoms occupied unique non-cubic sites, characterized by an interaction frequency Nu(sub Q) = 60 MHz and an asymmetry parameter eta = 0.2. These sites were attributed to In-(cadmium vacancy) complexes, since this signal was eliminated by subsequent annealing in a cadmium atmosphere. Similar results were obtained for the Cd(Mn)Te samples, but the vacancy complex occurred at a lower annealing temperature. The XPS data for Cd(Mn)Te showed that its oxide characteristics differed considerably from those of CdTe. Although oxide formation of CdTe occurs very lowly after sputter cleaning, a significant Te-O layer was formed on the Cd(Mn)Te surfaces after only 10 min exposure to air. In addition, deionized water removed the native oxide completely for CdTe but not for Cd(Mn)Te. For MCT, annealing at 350 C caused the formation of two defect complexes, characterized by frequencies of 83 and 92 MHz, and eta is approximately equal 0.1. These PAC signals vanished after annealing under a mercury atmosphere, indicating that they were also due to In-vacancy complexes.

  1. Advances in low-cost infrared imaging using II-VI colloidal quantum dots (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Pimpinella, Richard E.; Buurma, Christopher; Ciani, Anthony J.; Grein, Christoph H.; Guyot-Sionnest, Philippe

    2017-02-01

    II-VI colloidal quantum dots (CQDs) have made significant technological advances over the past several years, including the world's first demonstration of MWIR imaging using CQD-based focal plane arrays. The ultra-low costs associated with synthesis and device fabrication, as well as compatibility with wafer-level focal plane array fabrication, make CQDs a very promising infrared sensing technology. In addition to the benefit of cost, CQD infrared imagers are photon detectors, capable of high performance and fast response at elevated operating temperatures. By adjusting the colloidal synthesis, II-VI CQD photodetectors have demonstrated photoresponse from SWIR through LWIR. We will discuss our recent progress in the development of low cost infrared focal plane arrays fabricated using II-VI CQDs.

  2. The problem of conductivity-type inversion in wide band gap II-VI compounds

    NASA Astrophysics Data System (ADS)

    Butkhuzi, T. V.; Tsekvava, B. E.; Kekelidze, N. P.; Chikoidze, E. G.; Khulordava, T. G.; Sharvashidze, M. M.

    1999-10-01

    To solve the problem of conductivity-type inversion in wide band gap II-VI compounds the thermodynamical analysis of intrinsic point defects has been performed. The existence of certain critical temperature of heat treatment in equilibrium conditions is shown. Above this temperature it is impossible to obtain the samples with stoichiometry deviation toward non-metals. At the temperatures lower than Tc, the diffusion processes in crystals are retarded and the equilibrium between II-VI crystals and B component vapour cannot be established (B is a component of a binary compound AB). Thus, it is shown that under thermodynamical equilibrium conditions it is impossible to obtain wide band gap II-VI compounds of p-type conductivity.

  3. Spectroscopic characterization of iron-doped II-VI compounds for laser applications

    NASA Astrophysics Data System (ADS)

    Martinez, Alan

    The middle Infrared (mid-IR) region of the electromagnetic spectrum between 2 and 15 ?m has many features which are of interest to a variety of fields such as molecular spectroscopy, biomedical applications, industrial process control, oil prospecting, free-space communication and defense-related applications. Because of this, there is a demand for broadly tunable, laser sources operating over this spectral region which can be easily and inexpensively produced. II-VI semiconductor materials doped with transition metals (TM) such as Co 2+, Cr2+, or Fe2+ exhibit highly favorable spectroscopic characteristics for mid-IR laser applications. Among these TM dopants, Fe2+ has absorption and emission which extend the farthest into the longer wavelength portion of the mid-IR. Fe2+:II-VI crystals have been utilized as gain elements in laser systems broadly tunable over the 3-5.5 microm range [1] and as saturable absorbers to Q -switch [2] and mode-lock [3] laser cavities operating over the 2.7-3 microm. TM:II-VI laser gain elements can be fabricated inexpensively by means of post-growth thermal diffusion with large homogeneous dopant concentration and good optical quality[4,5]. The work outlined in this dissertation will focus on the spectroscopic characterization of TM-doped II-VI semiconductors. This work can be categorized into three major thrusts: 1) the development of novel laser materials, 2) improving and extending applications of TM:II-VI crystals as saturable absorbers, and 3) fabrication of laser active bulk crystals. Because current laser sources based on TM:II-VI materials do not cover the entire mid-IR spectral region, it is necessary to explore novel laser sources to extend available emissions toward longer wavelengths. The first objective of this dissertation is the spectroscopic characterization of novel ternary host crystals doped with Fe2+ ions. Using crystal field engineering, laser materials can be prepared with emissions placed in spectral regions not

  4. 77 FR 36579 - II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased Workers From Adecco, Carol...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-19

    ... Employment and Training Administration II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased...., Infrared Optics-Saxonburg Division, Saxonburg, PA; Notice of Revised Determination on Reconsideration The... period. The determination was applicable to workers and former workers of II-VI, Inc., Infrared Optics...

  5. Cathodoluminescence from II-VI quantum well light emitting diodes

    NASA Astrophysics Data System (ADS)

    Nikiforov, Alexey Yuriyevich

    The objectives of the present research were to advance understanding of luminescence degradation, defects, and bias-dependent carrier confinement and transport in ZnCd(Mg)Se-based quantum well (QW) LED structures grown by molecular beam epitaxy. Most data were obtained from three LED samples. One was a ZnCdSe QW-based red LED with Au coating on top, and two were ZnCdMgSe QW-based blue LEDs with Au coating or Au dots on top. Optical and carrier confinement properties were characterized by time-resolved and bias-dependent cathodoluminescence (CL) spectroscopy and imaging. Electrical behavior was characterized by I-V and electroluminescence (EL) measurements. Both reversible and irreversible effects of bias and electron bombardment on luminescence were observed. Reversible effects were QW CL energy shifts and QW CL intensity changes during bias cycling. No EL was detected from the blue LEDs. Irreversible effects were QW CL decreases for the red LED and QW CL intensity enhancements for the blue LEDs. Reversible effects of bias on CL were simulated using a model incorporating generation and transport of excess carriers, overlap of the electron and hole wave functions, carrier escape, and competition between radiative and nonradiative processes. Ground state energy levels of carriers in the QW heterostructure were calculated in the effective mass and envelope function approximations. Modification of energy levels and wave functions by bias was calculated for both infinite and finite QWs. The finite QW simulations predict the reversible bias-dependent CL intensity behaviors seen experimentally for both red and blue LEDs. The simulations predict qualitatively, but not quantitatively, the reversible photon energy shifts with bias for the red LED. The photon energy shifts for the blue LEDs differed in both direction and magnitude from the simulations. The CL experiments have not established the cause of irreversible intensity decreases observed for the red LED during

  6. Measurement and applications of dispersion in epitaxial II-VI semiconductor thin films and multilayers

    NASA Astrophysics Data System (ADS)

    Peiris, Frank Channa

    In this thesis we investigate the dispersion of the indices of refraction of II-VI semiconductors, and explore a series of materials combinations which are suited for the fabrication of distributed Bragg reflectors (DBRs). A prism coupler method and reflectivity measurements were used to determine the indices of refraction n of II-VI semiconductor ternary alloys of various compositions prepared by molecular beam epitaxy (MBE). We show that the prism coupler technique, which is capable of measuring n with an accuracy of at least 0.1% at discrete wavelengths, and simultaneously to determine the thickness of the layers with an uncertainty of less than 0.5%, is a very reliable, convenient, and accurate tool for determining compositions and growth rates for MBE. Using the highly accurate values of n obtained from the prism coupler and reflectivity measurements, we have fabricated several DBRs using different II-VI materials. From our work on DBRs, we have obtained a structure (i.e., a 20-period ZnMgSe/ZnCdSe multilayer) which yields 98% reflectivity. This is to our knowledge the highest reflectivity reported for a DBR in the II-VI semiconductor camp. Motivated by this work, we show preliminary results of monolithic microcavities which are fabricated by integrating these high-reflectivity DBRs.

  7. X-ray absorption fine structure and X-ray excited optical luminescence studies of II-VI semiconducting nanostructures

    NASA Astrophysics Data System (ADS)

    Murphy, Michael Wayne

    2010-06-01

    Various II-VI semiconducting nanomaterials such as ZnO-ZnS nanoribbons (NRs), CdSxSe1-x nanostructures, ZnS:Mn NRs, ZnS:Mn,Eu nanoprsims (NPs), ZnO:Mn nanopowders, and ZnO:Co nanopowders were synthesized for study. These materials were characterized by techniques such as scanning electron microscopy, transmission electron microscopy, element dispersive X-ray spectroscopy, selected area electron diffraction, and X-ray diffraction. The electronic and optical properties of these nanomaterials were studied by X-ray absorption fine structure (XAFS) spectroscopy and X-ray excited optical luminescence (XEOL) techniques, using tuneable soft X-rays from a synchrotron light source. The complementary nature ofthe XAFS and XEOL techniques give site, element and chemical specific measurements which allow a better understanding of the interplay and role of each element in the system. Chemical vapour deposition (CVD) of ZnS powder in a limited oxygen environment resulted in side-by-side biaxial ZnO-ZnS NR heterostructures. The resulting NRs contained distinct wurtzite ZnS and wurtzite ZnO components with widths of 10--100 nm and 20 --500 nm, respectively and a uniform interface region of 5-15 nm. XAFS and XEOL measurements revealed the luminescence of ZnO-ZnS NRs is from the ZnO component. The luminescence of CdSxSe1-x nanostructures is shown to be dependent on the S to Se ratio, with the band-gap emission being tunable between that of pure CdS and CdSe. Excitation of the CdSxSe 1-x nanostructures by X-ray in XEOL has revealed new de-excitation channels which show a defect emission band not seen by laser excitation. CVD of Mn2+ doped ZnS results in nanostructures with luminescence dominated by the yellow Mn2+ emission due to energy transfer from the ZnS host to the Mn dopant sites. The addition of EuCl3 to the reactants in the CVD process results in a change in morphology from NR to NP. Zn1-xMnxO and Zn1-xCOxO nanopowders were prepared by sol-gel methods at dopant concentrations

  8. Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures.

    PubMed

    Xia, Feifei; Shao, Zhibin; He, Yuanyuan; Wang, Rongbin; Wu, Xiaofeng; Jiang, Tianhao; Duhm, Steffen; Zhao, Jianwei; Lee, Shuit-Tong; Jie, Jiansheng

    2016-11-22

    Wide band gap II-VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p-n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II-VI nanostructures via surface charge transfer doping (SCTD) using high work function transition metal oxides such as MoO3, WO3, CrO3, and V2O5 as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II-VI nanostructures, leading to accumulation of positive charges (holes injection) in the II-VI nanostructures. As a result, Fermi levels of the II-VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II-VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II-VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II-VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II-VI nanostructures via realization of complementary doping.

  9. New highly fluorescent biolabels based on II VI semiconductor hybrid organic inorganic nanostructures for bioimaging

    NASA Astrophysics Data System (ADS)

    Santos, B. S.; Farias, P. M. A.; Menezes, F. D.; Brasil, A. G., Jr.; Fontes, A.; Romão, L.; Amaral, J. O.; Moura-Neto, V.; Tenório, D. P. L. A.; Cesar, C. L.; Barbosa, L. C.; Ferreira, R.

    2008-11-01

    Semiconductor quantum dots based on II-VI materials may be prepared to develop good biolabeling properties. In this study we present some well-succeeded results related to the preparation, functionalization and bioconjugation of CdY (Y = S, Se and Te) to biological systems (live cells and fixed tissues). These nanostructured materials were prepared using colloidal synthesis in aqueous media resulting nanoparticles with very good optical properties and an excellent resistance to photodegradation.

  10. Persistent Photoconductivity in II-VI Mixed Semiconductors Related Critical Phenomena and Applications

    DTIC Science & Technology

    1991-03-31

    VI Semiconductor Thin Films, (3) Comparison Between II-VI and III-V Semiconductors and (4) PCC Transient Behavior . 14. SIWCT TEI S NtIR0PAE I&Pfcu04 I7...excitation photon dose have been measured. Furthermore, the PPC behavior has been investigated under different bias voltage, Vb. We found for the first... behavior in semiconductor thin films since eventually all the novel opto- electronic devices utilizing PPC mechanism will be fabricated from thin films

  11. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  12. Design of cadmium-free colloidal II-VI semiconductor quantum dots exhibiting RGB emission

    NASA Astrophysics Data System (ADS)

    Asano, Hiroshi; Omata, Takahisa

    2017-04-01

    The size and composition dependence of the optical gap of colloidal alloyed quantum dots (QDs) of Zn(Te1-xSex) and Zn(Te1-xSx) were calculated by the finite-depth-well effective mass approximation method. QDs that exhibited red, green and blue emission were explored to develop cadmium-free II-VI chalcogenide-based QD-phosphors. We considered that highly monodisperse colloidal QDs with diameters of 3-6 nm are easy to synthesize and II-VI semiconductor QDs usually exhibit a Stokes shift ranging between 50 and 150 meV. We showed that Zn(Te1-xSex) QDs with 0.02≤x≤0.68, and 0≤x≤0.06, and 0.66≤x≤0.9 may be expected to exhibit green, and blue emission, respectively. Zn(Te1-xSx) QDs with 0.26≤x≤0.37, 0.01≤x≤0.2 and 0.45≤x≤0.61, 0≤x≤0.02, and 0.63≤x≤0.72, should give red, green and blue emission respectively. On the basis of our calculations, we showed that Zn(Te,Se) and Zn(Te,S) QDs are very promising cadmium-free II-VI chalcogenide semiconductor QD phosphors.

  13. Interface control of electronic and optical properties in IV-VI and II-VI core/shell colloidal quantum dots: a review.

    PubMed

    Jang, Youngjin; Shapiro, Arthur; Isarov, Maya; Rubin-Brusilovski, Anna; Safran, Aron; Budniak, Adam K; Horani, Faris; Dehnel, Joanna; Sashchiuk, Aldona; Lifshitz, Efrat

    2017-01-17

    Semiconductor colloidal quantum dots (CQDs) have attracted vast scientific and technological interest throughout the past three decades, due to the unique tuneability of their optoelectronic properties by variation of size and composition. However, the nanoscale size brings about a large surface-to-bulk volume ratio, where exterior surfaces have a pronounced influence on the chemical stability and on the physical properties of the semiconductor. Therefore, numerous approaches have been developed to gain efficient surface passivation, including a coverage by organic or inorganic molecular surfactants as well as the formation of core/shell heterostructures (a semiconductor core epitaxially covered by another semiconductor shell). This review focuses on special designs of core/shell heterostructures from the IV-VI and II-VI semiconductor compounds, and on synthetic approaches and characterization of the optical properties. Experimental observations revealed the formation of core/shell structures with type-I or quasi-type-II band alignment between the core and shell constituents. Theoretical calculations of the electronic band structures, which were also confirmed by experimental work, exposed surplus electronic tuning (beyond the radial diameter) with adaptation of the composition and control of the interface properties. The studies also considered strain effects that are created between two different semiconductors. It was disclosed experimentally and theoretically that the strain can be released via the formation of alloys at the core-shell interface. Overall, the core/shell and core/alloyed-shell heterostructures showed enhancement in luminescence quantum efficiency with respect to that of pure cores, extended lifetime, uniformity in size and in many cases good chemical sustainability under ambient conditions.

  14. Microscopic defect induced slow-mode degradation in II VI based blue green laser diodes

    NASA Astrophysics Data System (ADS)

    Adachi, Masahiro; Min Aung, Zaw; Minami, Kouichirou; Koizumi, Keiichi; Watanabe, Masashi; Kawamoto, Seiji; Yamaguchi, Tsutomu; Kasada, Hirofumi; Abe, Tomoki; Ando, Koshi; Nakano, Kazushi; Ishibashi, Akira; Itoh, Satoshi

    2000-06-01

    We have studied the microdefect induced degradation mode in long-lifetime blue-green laser diodes (LDs) and light emitting diodes (LEDs) based on II-VI wide bandgap semiconductors. Microscopic deep defect centers in the LDs and LEDs are detected using mainly DLTS technique, coupled with ICTS methods. It is evidenced that a slow-mode degradation, commonly observed in dislocation-free LD devices, is caused by the generation and enhancement of microscopic deep centers during the device aging process. One possible degradation mechanism with a "carrier removal effect" is presented.

  15. Self-Organized Nanostructures in Wide-Band-Gap II-VI's

    NASA Astrophysics Data System (ADS)

    Furdyna, J. K.

    1997-03-01

    We describe three distinct categories of self-organized phenomena observed in the MBE growth of II-VI semiconductors. First, we describe self-organized formation of compositionally-modulated ZnSe_1-xTex superlattices. Periodic modulation of composition x in this alloy occurs spontaneously when Zn, Se, and Te fluxes are simultaneously incident on vicinal (100) GaAs substrates. The period is highly regular, with typical values between 20Åand 40Åand is long-range in character. Second, we discuss formation of self-assembled CdSe quantum dots (QDs) on ZnSe, or on ZnSe-based alloys (e.g., Zn_1-xCd_xSe, Zn_1-xMn_xSe). We note that the relationship of CdSe and ZnSe is a close parallel, in terms of strain, to that of InAs and GaAs. Since the self-organized formation of QDs is expected to be strongly sensitive to strain as well as to element-specific chemistries, comparison of CdSe dots on ZnSe with the already well estabilis! he! d InAs quantum dots on GaAs should be especially interesting. Finally, we discuss self-organized formation of interesting surface morphologies observed in the growth of MnSe on GaAs. Although not strictly a II-VI compound, MnSe is of interest in the II-VI context because it readily forms alloys (e.g., Zn_1-xMn_xSe) or superlattices (e.g., ZnSe/MnSe) with the canonical II-VIs. In the MBE process described here MnSe, when grown on GaAs or ZnSe, forms high-quality monocrystalline layers with NaCl structure. The surfaces of these layers display interesting regular patterns on the mesoscopic scale, that can be controlled by growth conditions. It is possible that such patterns can serve as "templates" for deposition of II-VI quantum wire networks. Collaborators: S.P. Ahrenkiel, M. Al-Jassim, A.-L. Barabasi, M. Dobrowolska, S. Lee, H. Luo, J.L. Merz, Q. Shen, P.D. Wang

  16. Self-organized MBE growth of II VI epilayers on patterned GaSb substrates

    NASA Astrophysics Data System (ADS)

    Wissmann, H.; Tran Anh, T.; Rogaschewski, S.; von Ortenberg, M.

    1999-05-01

    We report on the self-organized MBE growth of II-VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1- xSe x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.

  17. Large ordered arrays of single photon sources based on II-VI semiconductor colloidal quantum dot.

    PubMed

    Zhang, Qiang; Dang, Cuong; Urabe, Hayato; Wang, Jing; Sun, Shouheng; Nurmikko, Arto

    2008-11-24

    In this paper, we developed a novel and efficient method of deterministically organizing colloidal particles on structured surfaces over macroscopic areas. Our approach utilizes integrated solution-based processes of dielectric encapsulation and electrostatic-force-mediated self-assembly, which allow precisely controlled placement of sub-10nm sized particles at single particle resolution. As a specific demonstration, motivated by application to single photon sources, highly ordered 2D arrays of single II-VI semiconductor colloidal quantum dots (QDs) were created by this method. Individually, the QDs display triggered single photon emission at room temperature with characteristic photon antibunching statistics, suggesting a pathway to scalable quantum optical radiative systems.

  18. Preparation and characterization of II-VI compound semiconductor thin-films

    NASA Astrophysics Data System (ADS)

    Boyer, Leah (Ge Shao)

    In this thesis the pulsed-laser deposition (PLD) method for growing thin-films was discussed and applied to form II-VI compound ZnTe thin-films. The transmission and reflection of these films were measured by different methods and theoretically fitted. The characterization of the selected thin-films was analyzed using x-ray diffraction, scanning electron microscopy (SEM). In order to complete the characterization the photocurrent of ZnTe thin-film on Si substrate was measured. The optical nonlinearity of ZnTe thin-film was theoretically proposed and experimentally measured.

  19. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  20. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, Shen; Li, Chao; Scripa, R.; Lehoczky, Sandra L.; Kim, Y. W.; Baird, J. K.; Lin, B.; Ban, Heng; Benmore, Chris

    2003-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. It has long been recognized that liquid Te presents a unique case having properties between those of metals and semiconductors. The electrical conductivity for Te melt increases rapidly at melting point, indicating a semiconductor-metal transition. Te melts comprise two features, which are usually considered to be incompatible with each other: covalently bound atoms and metallic-like behavior. Why do Te liquids show metallic behavior? is one of the long-standing issues in liquid metal physics. Since thermophysical properties are very sensitive to the structural variations of a melt, we have conducted extensive thermophysical measurements on Te melt.

  1. Small clusters of II-VI materials: ZniOi, i=1-9

    NASA Astrophysics Data System (ADS)

    Matxain, Jon M.; Fowler, Joseph E.; Ugalde, Jesus M.

    2000-11-01

    Improvements in the characterization of II-VI compound-based solar cells, and the recent experimental characterization of small clusters and nanoparticles, make the study of small II-VI clusters very interesting. In this work, the ground states of small ZniOi clusters are studied, where i=1-9. Ringlike structures have been found to be the global minima for clusters as large as i=7, and three-dimensional spheroid structures for larger ones, where i=8 and 9. This is due to the stability of obtuse O-Zn-O angles in the first case, and to the stability gained from higher coordination in the second case. Three-dimensional structures may be envisioned as being built from Zn2O2 and Zn3O3 rings, as was the case for ZnS three-dimensional global minima and other ZnO calculations. Calculated natural orbital charges become larger as the cluster size increases, showing a tendency toward bulk charges.

  2. Structural Fluctuation and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    2003-01-01

    The objectives of the project is to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs and to study the fundamental heterophase fluctuations phenomena in these melts by: 1) Conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts such as viscosity, electrical conductivity, thermal diffusivity and density as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) Performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed similar relaxation behavior as the measured diffusivity. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previous reported.

  3. Properties of Group-IV, III-V and II-VI Semiconductors

    NASA Astrophysics Data System (ADS)

    Adachi, Sadao

    2005-03-01

    Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide. The purpose of this book is twofold: * to discuss the key properties of the group-IV, III-V and II-VI semiconductors * to systemize these properties from a solid-state physics aspect The majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some corrective effects and related properties, such as piezoelectric, elastooptic and electrooptic properties, are also discussed. The book contains convenient tables summarizing the various material parameters and the definitions of important semiconductor properties. In addition, graphs are included in order to make the information more quantitative and intuitive. The book is intended not only for semiconductor device engineers, but also physicists and physical chemists, and particularly students specializing in the fields of semiconductor synthesis, crystal growth, semiconductor device physics and technology.

  4. Small clusters of II-VI materials: ZniSi, i=1-9

    NASA Astrophysics Data System (ADS)

    Matxain, Jon M.; Fowler, Joseph E.; Ugalde, Jesus M.

    2000-05-01

    The improvements in the characterization of II-VI compound-based solar cells and the recent experimental characterization of small clusters and nanoparticles make the study of small II-VI clusters very interesting. In this work, the ground states of small ZniSi clusters are studied, i=1-9. Ringlike structures have been found to be the global minima in the case of the smaller studied clusters, i.e., i=1-5, and three-dimensional spheroid structures for larger ones, i=6-9. This is due to the stability of obtuse S-Zn-S angles in the first case, and to the stability gained from higher coordination in the second case. The three-dimensional structures may be envisioned as being built from Zn2S2 and Zn3S3 rings, the last ring being the building block of the zinc-sulfide crystal structures, both zinc blende and wurtzite. As cluster size increases, the geometry of the Zn3S3 rings is closer to the one of bulk. Moreover, this structural tendency produces trends to bulklike properties in other properties such as cohesive energy and atomic charges.

  5. Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1997-01-01

    The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

  6. Novel Asymmetric III-V/II-VI Hybrid Heterostructures for High-Power Mid-Infrared Laser

    DTIC Science & Technology

    2007-11-02

    cladding materials forming a type II heterojunction. This approach allows reducing the carrier leakage from the active region of the laser structure...optimization (growth temperature, flux ratio, doping of the wide-gap claddings ) for the p- i-n AlGaSbAs/CdSe/CdMgSe laser structures grown on p- InAs substrates...fabrication, n the ability to make a set of lasers for different wavelengths using the same technology and varying the QW width only. To obtain laser

  7. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    NASA Technical Reports Server (NTRS)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  8. Boîtes quantiques II-VI comme sources de photons uniques

    NASA Astrophysics Data System (ADS)

    Couteau, C.; Moehl, S.; Tinjod, F.; Suffczynski, J.; Romestain, R.; Vial, J.-C.; Gérard, J.-M.; Kheng, K.; Poizat, J.-P.

    2004-11-01

    Dans le cadre de l'information et de la communication quantique, la nécessité d'avoir des photons uniques monomodes et à la demande se révèle cruciale. De récents travaux théoriques ont montré la possibilité de réaliser des portes logiques quantiques n'utilisant que de l'optique linéaire. C'est dans ce contexte que s'insère notre travail sur l'élaboration et l'utilisation de boîtes quantiques semi-conductrices II-VI comme “pistolet” à photons. Des expériences de dégroupement et d'interférences à 2 photons sont les premiers pas nécessaires pour caractériser notre source.

  9. Mid-IR photoluminescence and lasing of chromium doped II-VI quantum dots

    NASA Astrophysics Data System (ADS)

    Martyshkin, D. V.; Kim, C.; Moskalev, I. S.; Fedorov, V. V.; Mirov, S. B.

    2008-02-01

    Here we report a new method for transition-metal (TM) doped II-VI Quantum Dots (QD) fabrication and first mid-IR (2-3 μm) lasing at 77K of Cr 2+:ZnS QD powder (~ 27 nm grain size). Cr 2+:ZnS nanocrystalline dots (NCDs) were prepared using laser ablation. The mid-IR photoluminescence (PL) and lasing were studied. The dependence of PL spectrum profile on pump energy demonstrated a threshold behavior accompanied by the appearance of a sharp stimulated emission band around 2230 nm. The stimulated emission band is shifted to the longer wavelength with respect to the spontaneous emission and corresponds to the peak of the Cr:ZnS gain spectrum. This was also accompanied by a considerable lifetime shortening.

  10. Homogeneous linewidth of confined electron-hole-pair states in II-VI quantum dots

    NASA Astrophysics Data System (ADS)

    Woggon, U.; Gaponenko, S.; Langbein, W.; Uhrig, A.; Klingshirn, C.

    1993-02-01

    We present results of nanosecond-hole-burning experiments of small CdSe and CdS1-xSex quantum dots embedded in glass at various temperatures. The spectral width of the holes exhibits a complex interplay between excitation conditions and illumination history. Among a great variety of investigated II-VI quantum dots in glasses from various sources, we find, after strong laser illumination, samples showing spectrally narrow holes similar to those reported for quantum dots embedded in organic matrices with interfaces well defined by organic groups. These sharp nonlinear resonances with a halfwidth Γ of only 10 meV at T=20 K allow one to investigate the energetic distance of the lowest hole levels and the temperature dependence of the homogeneous line broadening. The differences in the linewidth in the hole-burning spectra are attributed to changes of interface charge states or interface polarizations under high excitation.

  11. Green monolithic II-VI vertical-cavity surface-emitting laser operating at room temperature

    NASA Astrophysics Data System (ADS)

    Kruse, C.; Ulrich, S. M.; Alexe, G.; Roventa, E.; Kröger, R.; Brendemühl, B.; Michler, P.; Gutowski, J.; Hommel, D.

    2004-02-01

    The realization of a monolithic all II-VI-based vertical cavity surface emitting laser (VCSEL) for the green spectral region is reported. Optically pumped lasing operation was achieved up to room temperature using a planar VCSEL structure. Taking advantage of distributed Bragg-reflectors based on MgS/Zn(Cd)Se superlattices as the low-refractive index material and ZnS0.06Se0.94 layers as the high-index material with a refractive index contrast of n = 0.6, a quality factor exceeding Q = 2000 is reached by using only 18 Bragg periods for the bottom DBR and 15 Bragg periods for the top DBR. The threshold power density is 0.32 MW/cm2 at a temperature of 10 K (emission wavelength 498.5 nm) and 1.9 MW/cm2 at room temperature (emission wavelength 502.3 nm).

  12. Realistic tight-binding model for the electronic structure of II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Sapra, Sameer; Shanthi, N.; Sarma, D. D.

    2002-11-01

    We analyze the electronic structure of group II-VI semiconductors obtained within linearized muffin-tin-orbital approach in order to arrive at a realistic and minimal tight-binding model, parametrized to provide an accurate description of both valence and conduction bands. It is shown that a nearest-neighbor sp3 d5 model is fairly sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s* orbital. The obtained hopping parameters obey the universal scaling law proposed by Harrison, ensuring transferability to other systems. Furthermore, we show that certain subtle features in the bonding of these compounds require the inclusion of anion-anion interactions in addition to the nearest-neighbor cation-anion interactions.

  13. Characterization of convection related defects in II-VI compound semiconductors

    NASA Technical Reports Server (NTRS)

    Witt, August F.

    1993-01-01

    The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

  14. Mid-IR luminescence of Cr{sup 2+} : II - VI crystals in chalcogenide glass fibres

    SciTech Connect

    Mironov, Roman A; Zabezhailov, A O; Dianov, Evgenii M; Karaksina, E V; Shapashnikov, R M; Churbanov, M F

    2010-11-13

    Optical fibres have been fabricated for the first time from As{sub 2}S{sub 3} glass containing chromium-doped ZnS and ZnSe crystals, and their optical loss and luminescence spectra have been measured in the mid-IR. In the spectral range 2 - 3 {mu}m, the optical loss in the fibres is 2 - 4 dB m{sup -1}. The fibres have a broad luminescence band in the range 1.8 - 3 {mu}m, with a maximum near 1.9 {mu}m, which is due to Cr{sup 2+} {sup 5}E - {sup 5}T{sub 2} intracentre transitions in the II - VI host. (fibre optics)

  15. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    DOE PAGES

    Kang, Joongoo; Park, Ji -Sang; Stradins, Pauls; ...

    2017-07-13

    In this paper, nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si2AlP (or Si2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and opticalmore » properties of the nonisovalent alloys.« less

  16. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    NASA Astrophysics Data System (ADS)

    Kang, Joongoo; Park, Ji-Sang; Stradins, Pauls; Wei, Su-Huai

    2017-07-01

    Nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent S i2AlP (or S i2ZnS ) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, S i2AlP (or S i2ZnS ) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and optical properties of the nonisovalent alloys.

  17. Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

    1999-01-01

    This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

  18. All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

    DOEpatents

    McCandless, Brian E.

    2001-06-26

    An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

  19. Epitaxial growth and characterization of II-VI-semiconductor, one-dimensional nanostructures and thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Zuoming

    In this thesis, I present the results of three material science studies on II-VI semiconductor nanostructures and thin films: (1) epitaxial growth and characterization of one-dimensional ZnO nanostructures, (2) crystal structure and self-assembly of ultrathin ZnO nanorods, and (3) investigations of surface chemistry for atomic layer epitaxy of ZnS thin film on silicon with chemical precursors. First, in Chapter 3, I present a comparative study of metal-surface-catalyzed growth of ZnO nanowires using four different metal catalysts and using substrates of differing materials and crystal orientation. Multiple material diagnostics were employed to compare the material, structural, and optical properties of the nanowires grown using these different surface systems. My study showed that the growth modes of nanowires are dependent on the choice of surface catalysts. Further, the study revealed that these differences in growth modes are also closely related to the differences in materials properties of these wires including the degree of nanowire alignment on substrates, and the atomic composition ratio of Zn/O, as well as the relative intensity of the oxygen vacancy-related emission in photoluminescence spectra. Second, in Chapter 4, I investigated the growth and self-assembly of ultrathin ZnO nanorods using a combination of small-angle and wide-angle synchrotron X-ray diffraction (SAXRD and WAXRD), and TEM. SAXRD and TEM were used to investigate nanorod self-assembly and the influence of surfactant/precursor ratio on self-assembly; WAXRD were used to study the effects of growth chemistry and physical parameters on the nanorod size and lattice constants. These measurements revealed that these rods self-assemble into periodic superstructures and that the surfactant ligands are important in controlling self-assembly. WAXRD results suggest that surface-dependent changes, such as the binding of surface ligands or other adsorbed species may dominate the changes in nanorod

  20. Optical properties of II-VI semiconductor nanoclusters for use as phosphors

    NASA Astrophysics Data System (ADS)

    Wilcoxon, Jess P.; Newcomer, Paula

    2002-11-01

    The optical properties of both II-VI (direct gap) and type IV (indirect gap) nanosize semiconductors are significantly affected not only by their size, but by the nature of the chemical interface of the cluster with the embedding medium. This affects the light conversion efficiency and can alter the shape and position (i.e. the color) of the photoluminescence (PL). As the goal of our work is to embed nanoclusters into either organic or inorganic matrices for use as near UV, LED-excited phosphor thin films, understanding and controlling this interface is very important for preserving the high Q.E. of nanoclusters known for dilute solution conditions. We describe a room temperature synthesis of semiconductor nanoclusters which employs inexpensive, less toxic ionic precursors (metal salts), and simple coordinating solvents (e.g. tetrahydrofuran). This allows us to add passivating agents, ions, metal or semiconductor coatings to identical, highly dispersed bare clusters, post-synthesis. We can also increase the cluster size by heterogeneous growth on the seed nanoclusters. One of the most interesting observations for our II-VI nanomaterials is that both the absorbance excitonic features and the photoluminescence (PL) energy and intensity depend on the nature of the surface as well as the average size. In CdS, for example, the presence of electron traps (i.e Cd(II) sites) decreases the exciton absorbance peak amplitude but increases the PL nearly two-fold. Hole traps (i.e. S(II)) have the opposite effect. In the coordinating solvents used for the synthesis, the PL yield for d~2 nm, blue emitting CdSe clusters increases dramatically with sample age as the multiple absorbance features sharpen. Liquid chromatographic (LC) separation of the nanoclusters from other chemicals and different sized clusters is used to investigate the intrinsic optical properties of the purified clusters and identify which clusters are contributing most strongly to the PL. Both LC and dynamic

  1. Nuclear Magnetic Resonance Studies of II-Vi and Iii-V Semiconductor Alloys

    NASA Astrophysics Data System (ADS)

    Shi, Jian-Hui

    In this thesis, I show how the basic solid-state NMR techniques can be used to study the local electronic structures of II-VI and III-V semiconductor alloys on an atomic scale. We have focused our studies on a few high quality samples, mainly Hg_{rm 1-x}Cd_{rm x} Te in the II-VI group, In-based binary III-V bulk semiconductors InP, InAs and InSb, and the III-V alloys Ga_{rm 1-x}In _{rm x}As. For solid-state-recrystallized device-quality bulk Hg_{rm 1-x}Cd _{rm x}Te samples, with x equal to 0.2, 0.22 and 0.28, corresponding to the narrow-gap semiconducting side of the band-inversion configurations, we have obtained detailed band-edge symmetry information, and site-selective quantitative charge carrier orbital characteristics on an atomic scale. Our study also indicated that a random cation distribution model well described the materials. We have investigated ^{115 }In magnetic resonance frequency shifts and the temperature dependence of these shifts in In-based III-V binary semiconductors. We have extracted the chemical shifts from the total shifts for these III-V semiconductors at 303K and 77K. Our NMR study of these binary semiconductors not only enhanced the understanding of electronic properties of these compounds, but also served as a reference for our NMR studies of III-V alloys. We performed ^{115}In NMR studies for dilute III-V semiconductor alloy Ga _{rm 1-x}In_ {rm x}As with x equal to 0.72%. Spectra clearly indicating the local electronic configurations were obtained. We carried out a series of field orientation studies, and determined the field gradient which is due to In-In pairs. This study provided evidence of local clustering of In atoms.

  2. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    NASA Astrophysics Data System (ADS)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  3. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, S.; Li, C.; Scripa, R.; Lehoczky, S. L.; Kim, Y. M.; Baird, J. K.; Lin, B.; Ban, H.; Benmore, Chris; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed

  4. Device Processing of II-VI Semiconductor Films and Quantum Well Structures

    DTIC Science & Technology

    1991-03-07

    The objectives of this program is to develop a device processing technology necessary for proper utilization of Hg-based heterostructures and...superlattices in device applications. The specific focus or long term goal guiding the direction of the program is to develop the devices and processing ... technology required for an IR focal plane integrated with on-board signal processing electronics.

  5. Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

    NASA Astrophysics Data System (ADS)

    Ravikumar, Arvind P.; Chen, Guopeng; Zhao, Kuaile; Tian, Yue; Prucnal, Paul; Tamargo, Maria C.; Gmachl, Claire F.; Shen, Aidong

    2013-04-01

    We report the experimental demonstration of a room temperature, high responsivity, short wavelength II-VI Zn0.51Cd0.49Se/Zn0.29Cd0.26Mg0.45Se based quantum well infrared photodetector operating between 3 and 5 μm. Spectral response was observed up to room temperature with a cut off wavelength of 5 μm at 280 K. Measurements with a calibrated blackbody source yielded a peak responsivity of over 30 A/W at 280 K and an applied bias of -3 V. The dark current limited peak detectivity at 80 K and 280 K were measured to be 2 × 109 cm √Hz/W and 4 × 107 cm √Hz/W, respectively. These results are consistent with theoretical calculations that predict a maximum detectivity of the order of 107 cm √Hz/W at room temperature for typical carrier lifetimes and optimized doping levels.

  6. Biexciton in II-VI quantum dots with different localization potentials

    NASA Astrophysics Data System (ADS)

    Golovatenko, A. A.; Semina, M. A.; Rodina, A. V.; Shubina, T. V.

    2017-06-01

    We present a comparative study of the influence of the form of a localization potential on the binding energy of the biexciton in spherically symmetric quantum dots based on II-VI compounds. The proposed criterion for the comparison of potentials of different forms—the box potential, the harmonic oscillator, and the Gaussian potential—is based on the identical localization of charge carriers of the same sign in these potentials. Calculations of the biexciton binding energy have been performed using the variational method within the framework of the kp-perturbation theory taking into account additional polarization terms in the wave functions of the electron and hole subsystems, as well as the complex structure of the valence band. The obtained results have demonstrated that the presence of a smoothly varying finite-height potential in Cd(Zn)Se/ZnSe quantum dots can lead to a more efficient localization in the case of the biexciton in comparison with the exciton, which is of interest for the implementation of fast-acting quantum light emitters.

  7. Batatinosides II-VI, acylated lipooligosaccharides from the resin glycosides of sweet potato.

    PubMed

    Escalante-Sánchez, Edgar; Rosas-Ramírez, Daniel; Linares, Edelmira; Bye, Robert; Pereda-Miranda, Rogelio

    2008-10-22

    Sweet potato ( Ipomoea batatas) belongs to the Convolvulaceae (morning glory family) and is native to Mexico and Central America. Its edible tuberous roots have been much appreciated since pre-Hispanic times in Mesoamerica and now play an important role as a basic diet staple and a medicinal plant worldwide. The hexane-soluble extract from roots, through preparative-scale recycling HPLC, yielded five new lipophilic oligosaccharides of jalapinolic acid, batatinosides II-VI ( 1- 5), as well as the known pescapreins I ( 6) and VII ( 7) and murucoidin I ( 8), which are part of the purgative resin glycoside mixture. NMR spectroscopy and FAB mass spectrometry were used to characterize their structures. Compounds 1 and 2 are tetraglycosidic lactones of operculinic acid C. The pentasaccharide structures for compounds 3 and 4 were confirmed to be macrolactones of simonic acid B, and that characterized for 5 was derived from operculinic acid A. The lactonization site of the aglycone was placed at C-3 of the second saccharide unit in all compounds except 4, where it was placed at C-2. All compounds contain an esterifying residue that is composed of a long-chain fatty acid, n-decanoic acid (capric) or n-dodecanoic acid (lauric). In compound 3, an additional short-chain fatty acid, (2 S)-methylbutyric acid, was also identified.

  8. Quantum Dot Channel (QDC) FETs with Wraparound II-VI Gate Insulators: Numerical Simulations

    NASA Astrophysics Data System (ADS)

    Jain, F.; Lingalugari, M.; Kondo, J.; Mirdha, P.; Suarez, E.; Chandy, J.; Heller, E.

    2016-11-01

    This paper presents simulations predicting the feasibility of 9-nm wraparound quantum dot channel (QDC) field-effect transistors (FETs). In particular, II-VI lattice-matched layers which reduce the density of interface states, serving as top (tunnel gate), side, and bottom gate insulators, have been simulated. Quantum simulations show FET operation with voltage swing of ~0.2 V. Incorporation of cladded quantum dots, such as SiO x -Si and GeO x -Ge, under the gate tunnel oxide results in electrical transport in one or more quantum dot layers which form a quantum dot superlattice (QDSL). Long-channel QDC FETs have experimental multistate drain current ( I D)-gate voltage ( V G) and drain current ( I D)-drain voltage ( V D) characteristics, which can be attributed to the manifestation of extremely narrow energy minibands formed in the QDSL. An approach for modeling the multistate I D- V G characteristics is reported. The multistate characteristics of QDC FETs permit design of compact two-bit multivalued logic circuits.

  9. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals.

    PubMed

    Zhai, You; Shim, Moonsub

    2015-12-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission.

  10. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Zhai, You; Shim, Moonsub

    2015-10-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission.

  11. Magnetization studies of II-VI semiconductor columnar quantum dots with type-II band alignment

    NASA Astrophysics Data System (ADS)

    Eginligil, M.; Sellers, I. R.; McCombe, B. D.; Chou, W.-C.; Kuskovsky, I. L.

    2009-03-01

    We report SQUID magnetization measurements of MBE-grown type-II, II-VI semiconductor quantum dot (QD) samples, with and without Mn incorporation. In all samples, the easy axis is out-of-plane, possibly due to columnar QD formation that arises from strain interaction between adjacent thin dot-containing layers. In addition, both types of QDs display a non-zero spontaneous magnetic ordering at 300 K. One set of samples consists of five-layers of (Zn,Mn)Te/ZnSe with a nominal (Zn,Mn)Te thickness of 3 nm, and ZnSe spacer thickness of 5 nm and 20 nm. These magnetic QD samples show magnetization vs. temperature behavior that can be interpreted in terms of two independent FM phases characterized by transition temperatures TC1 < TC2. A sample containing no Mn consists of 130 ZnTe/ZnSe layers, which forms Zn(Se,Te) QD layers separated by ZnSe spacers. Evidence of ferromagnetism is also seen in this structure, but the spontaneous magnetization is much weaker. For this sample only one phase is seen with TC above 300 K. Results will be discussed in terms of magneto-polaronic effects and defect-level induced ferromagnetism.

  12. Chemical trend of exchange coupling in II-VI diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Chanier, Thomas; Hayn, Roland; Virot, François

    2010-03-01

    We present an ab-initio study of the magnetic couplings in Mn- and Co-doped II-VI DMS ZnA (A=O,S,Se,Te). We show the necessity of taking into account the strong electron correlation on the transition metal (TM) 3d level to reproduce correctly the experimental chemical trend. Within the LSDA+U (local spin density approximation with a Hubbard-type correction to TM 3d electrons), we find (i) the d-d exchange couplings between nearest-neighbor magnetic ions to be antiferromagnetic (AFM) of the order of -1 meV and (ii) the sp-d exchange constants between magnetic ions and conduction (valence) band electrons (holes) Nα (Nβ) to be FM (AFM) of the order of 0.1 eV (-1 eV). In ZnMnO and ZnCoO, the strong p-d hybridisation leads to the presence of a bound state above the valence band, the failure of the commonly-used Larson perturbation theory formulae for p-d and d-d exchange interactions [1] and prevents high-Tc ferromagnetism [2]. [1] B. Larson et al. , PRB 37, 4137 (1988) [2] T. Chanier et al. , PRB 79, 205204 (2009)

  13. Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C; Motakef, S.; Dudley, M.; Matyi, R.; Volz, H.

    1999-01-01

    The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

  14. Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C; Motakef, S.; Dudley, M.; Matyi, R.; Volz, H.

    1999-01-01

    The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

  15. Growth of II-VI thin-films from single-source precursors based on sterically encumbered sitel ligands

    SciTech Connect

    Arnold, J.; Seligson, A.L.; Walker, J.M.; Bourret, E.D.; Bonasia, P.J.

    1992-04-01

    We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel){sub 2} where sitel = -TeSi(SiMe{sub 3}){sub 3}. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.

  16. Growth of II-VI thin-films from single-source precursors based on sterically encumbered sitel ligands

    SciTech Connect

    Arnold, J.; Seligson, A.L.; Walker, J.M.; Bourret, E.D.; Bonasia, P.J.

    1992-04-01

    We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel){sub 2} where sitel = -TeSi(SiMe{sub 3}){sub 3}. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.

  17. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  18. Real-Time Observation of Morphological Transformations in II-VI Semiconducting Nanobelts via Environmental Transmission Electron Microscopy.

    PubMed

    Agarwal, Rahul; Zakharov, Dmitri N; Krook, Nadia M; Liu, Wenjing; Berger, Jacob S; Stach, Eric A; Agarwal, Ritesh

    2015-05-13

    It has been observed that wurtzite II-VI semiconducting nanobelts transform into single-crystal, periodically branched nanostructures upon heating. The mechanism of this novel transformation has been elucidated by heating II-VI nanobelts in an environmental transmission electron microscope (ETEM) in oxidizing, reducing, and inert atmospheres while observing their structural changes with high spatial resolution. The interplay of surface reconstruction of high-energy surfaces of the wurtzite phase and environment-dependent anisotropic chemical etching of certain crystal surfaces in the branching mechanism of nanobelts has been observed. Understanding of structural and chemical transformations of materials via in situ microscopy techniques and their role in designing new nanostructured materials is discussed.

  19. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  20. Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors

    SciTech Connect

    Szabo, L.F.; Biter, W.J.

    1988-04-05

    A photovolatic device is described comprising: a light transmissive substrate; an electrically conductive, transparent layer disposed on the substrate as a first electrode; a layer of a first semiconductor disposed on the first electrode; a p-type thin film of a tellurium-containing II-VI semiconductor disposed on the first semiconductor to form a photoresponsive junction with it; and a second electrode contacting the thin film.

  1. II-VI compounds 1985; Proceedings of the Second International Conference, Aussois, France, March 4-8, 1985

    NASA Astrophysics Data System (ADS)

    Marfaing, Y.; Triboulet, R.; Lunn, B.; Mullin, J. B.

    1985-08-01

    Among the topics considered concerning II-VI compounds are growth of low resistivity high-quality ZnSe, ZnS films by low-pressure metal-organic vapor phase epitaxy growth of Cd(x)Zn(1-x)S, growth of high-purity ZnSe by sublimation traveling-heater method (THM) and the characteristics of the Y and Z deep level emission line, properties of CdTe crystals grown by THM using Cd as the solvent, and liquid-phase epitaxy growth and characterization of 1.3-micron (Hg, Cd)Te layers. Also considered are the self-consistent electronic structure of vacancies in semiconductors, defects in cadmium selenide, luminescence characterization of residual impurities in CdTe grown by molecular beam epitaxy, and photoluminescence of Cd-rich Hg(1-x)Cd(x)Te alloys with x = 0.7-1.0. Additional topics discussed are optically detected magnetic resonance studies of recombination emission in II-VI compounds, X-ray photoemission spectroscopy and magnetotransport studies on the surface of CdHgTe, cadmium mercury telluride infrared detectors, and electron beam-pumped II-VI lasers.

  2. Investigation of II-VI Semiconductor Quantum Dots for Sensitized Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Horoz, Sabit

    Semiconductor nanocrystals, also referred to as quantum dots (QDs) which have advantages of low-cost, photostability, high molar extinction coefficients and size-dependent optical properties, have been the focus of great scientific and technological efforts in solar cells development. Due to the multi-electron generation effect, the theoretical maximum efficiency of quantum dots sensitized solar cells (QDSSCs) is much higher than that of dye sensitized solar cells (DSSCs). Thus QDSSCs have a clear potential to overtake the efficiency of other kinds of solar cells. Doped semiconductor QDs can not only retain nearly all advantages of intrinsic QDs, but also have additional absorption bands for improved efficiency. This approach is particularly important for wide band gap semiconductors, for example, zinc based QDs. Zinc based are desirable candidates as they are inexpensive, earth abundant and nontoxic. When doped, they can cover a broad range of visible spectrum. In my project, I aim at developing novel methods for the preparation of II-VI QDs and investigating the effects of doping on the properties and performances of QDSSCs. Cadmium selenide (CdSe), manganese doped cadmium selenide (Mn:CdSe), and manganese doped zinc sulfide (Mn:ZnS) QDs have been synthesized by laser ablation in water. The structural and luminescent properties of the QDs have been investigated. In addition, QDSSC performances of the samples have been measured using nanowire electrode made of ZnO and Zn2SnO 4. I have also successfully synthesized europium doped zinc sulfide (Eu:ZnS) and manganese doped cadmium sulfide (Mn:CdS) nanoparticles by wet chemical method, and analyzed structural, optical, and magnetic properties as well as the device performance of the nanoparticles.

  3. X-ray absorption and diffraction study of II VI dilute oxide semiconductor alloy epilayers

    NASA Astrophysics Data System (ADS)

    Boscherini, F.; Malvestuto, M.; Ciatto, G.; D'Acapito, F.; Bisognin, G.; DeSalvador, D.; Berti, M.; Felici, M.; Polimeni, A.; Nabetani, Y.

    2007-11-01

    Dilute oxide semiconductor alloys obtained by adding oxygen to a II-VI binary compound are of potential applicative interest for blue-light emitters in which the oxygen content could be used to tune the band gap. Moreover, their properties can be usefully compared to the more thoroughly studied dilute nitrides in order to gain insight into the common mechanisms which give rise to their highly non-linear physical properties. Recently, it has been possible to deposit ZnSeO and ZnSeOS epilayers on GaAs(001), which exhibit a red-shift of the band gap and giant optical bowing. In order to provide a structural basis for an understanding of their physical properties, we have performed a study of a set of ZnSeO and ZnSeOS epilayers on GaAs by high resolution x-ray diffraction and x-ray absorption fine structure. We have found that the strain goes from compressive to tensile with increasing O and S concentration and that, while all epilayers are never found to be pseudomorphic, the ternary ones exhibit a low relaxed fraction if compared to the ZnSe/GaAs sample. O K-edge x-ray absorption near edge spectra and corresponding simulations within the full multiple-scattering regime show that O is substitutionally incorporated in the host lattice. Zn and Se K-edge extended x-ray absorption fine structure detect the formation of Zn-O and Zn-S bonds; the analysis of these spectra within multiple-scattering theory has allowed us to measure the local structural parameters. The value of Zn-Se bond length is found to be in agreement with estimates based on models of local distortions in strained and relaxed epilayers; an increase of the mean-square relative displacement is detected at high O and S concentration and is related to both intrinsic and extrinsic factors.

  4. Spectroscopic characterization of Fe2+-doped II-VI ternary and quaternary mid-IR laser active powders

    NASA Astrophysics Data System (ADS)

    Martinez, A.; Martyshkin, D. V.; Fedorov, V. V.; Mirov, S. B.

    2014-02-01

    We report on spectroscopic characterization of laser active powders based on iron doped II-VI ternary and quaternary semiconductors for mid-IR laser applications. Iron doped Cd1-x MnxTe, Cd1-x MnxS, Cd1-xMnxSe, Cd0.5Mn0.5S0.5Se0.5 , Cd1-xZnxTe compounds with x=0.5-0.25, were prepared by using thermo diffusion technique. The starting binary powders were mixed in the appropriate molar ratios, sealed in evacuated (10-3 Torr) quartz ampoules, and annealed at 800-1000oC for several days. Samples composition, integrity, and grain size were characterized by micro-Raman and Xray diffraction and revealed a variation of the crystal field parameters depending on powder composition. Fe2+ photoluminescence was characterized by spectral band position (normalized with respect to the detection platform spectral sensitivity) and lifetime at different temperatures, enabling calculation of the absorption and emission crosssections. Practical utility of the developed powders was demonstrated by a room temperature random lasing of iron doped Cd0.5Zn0.5Te powders over 5620-6020 nm spectral range pumped by a 2.94 μm radiation of a Q-switched Er:YAG laser. In summary, the following has been accomplished: (1) It was demonstrated that laser active Fe2+ doped ternary and quaternary II-VI materials can be produced by simple annealing of the commercially available binary powders omitting expensive and complicated crystal growth processes; (2) It is possible to effectively shift PL of Fe2+ in II-VI host materials towards shorter or longer wavelength by varying composition, type and amount of the second cation in ternary II-VI materials; (3) Major spectroscopic characteristics of Fe2+ doped II-VI ternary and quaternary compounds were obtained and their practical utility for mid-IR lasing demonstrated.

  5. Microwave-assisted synthesis of II-VI semiconductor micro-and nanoparticles towards sensor applications

    NASA Astrophysics Data System (ADS)

    Majithia, Ravish Yogesh

    Engineering particles at the nanoscale demands a high degree of control over process parameters during synthesis. For nanocrystal synthesis, solution-based techniques typically include application of external convective heat. This process often leads to slow heating and allows decomposition of reagents or products over time. Microwave-assisted heating provides faster, localized heating at the molecular level with near instantaneous control over reaction parameters. In this work, microwave-assisted heating has been applied for the synthesis of II-VI semiconductor nanocrystals namely, ZnO nanopods and CdX (X = Se, Te) quantum dots (QDs). Based on factors such as size, surface functionality and charge, optical properties of such nanomaterials can be tuned for application as sensors. ZnO is a direct bandgap semiconductor (3.37 eV) with a large exciton binding energy (60 meV) leading to photoluminescence (PL) at room temperature. A microwave-assisted hydrothermal approach allows the use of sub-5 nm ZnO zero-dimensional nanoparticles as seeds for generation of multi-legged quasi one-dimensional nanopods via heterogeneous nucleation. ZnO nanopods, having individual leg diameters of 13-15 nm and growing along the [0001] direction, can be synthesized in as little as 20 minutes. ZnO nanopods exhibit a broad defect-related PL spanning the visible range with a peak at ~615 nm. Optical sensing based on changes in intensity of the defect PL in response to external environment (e.g., humidity) is demonstrated in this work. Microwave-assisted synthesis was also used for organometallic synthesis of CdX(ZnS) (X = Se, Te) core(shell) QDs. Optical emission of these QDs can be altered based on their size and can be tailored to specific wavelengths. Further, QDs were incorporated in Enhanced Green-Fluorescent Protein -- Ultrabithorax (EGFP-Ubx) fusion protein for the generation of macroscale composite protein fibers via hierarchal self-assembly. Variations in EGFP- Ubx˙QD composite

  6. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  7. Precipitation of anion inclusions and plasticity under hydrostatic pressure in II-VI crystals

    NASA Astrophysics Data System (ADS)

    Lindberg, G. P.; Weinstein, B. A.

    2016-10-01

    Precipitation of anion nanocrystals (NCs) in initially stoichiometric II-VI crystals under hydrostatic pressure and light exposure is explored by Raman spectroscopy, and the mechanism for this effect is analyzed by model calculations. ZnSe, ZnTe, and CdSe crystals are studied in bulk and/or epitaxial-film forms. Se and Te NCs in the trigonal (t) phase precipitate in ZnSe and ZnTe, but the effect is absent or minimal in CdSe. The precipitation is induced by pressure and assisted by sub-band-gap light. In ZnSe, t-Se NCs appear for pressure exceeding 4.8 GPa and light flux above 50 -70 W /m m2 . In ZnTe, the precipitation of t-Te NCs requires less pressure to initiate, and there is a clear upper-pressure limit for t-Te nuclei to form. We find also that ZnTe samples with cleavage damage or elevated zinc-vacancy content are more prone to form t-Te NCs at lower pressures (even 1 atm in some cases) and lower flux. The precipitation seen in ZnSe and ZnTe occurs at pressures far below their phase transitions, and cannot be due to those transitions. Rather, we propose that the NCs nucleate on dislocations that arise from hydrostatic-pressure induced plastic flow triggered by noncubic defect sites. Calculations of the kinetic barrier for growth of an optimally shaped nucleus are performed, including hydrostatic pressure in the energy minimization scheme. Using sensible values for the model parameters related to the cohesive energies of Se and Te, the calculations account for our main observations, including the existence of an upper pressure limit for precipitation, and the absence of precipitation in CdSe. We consider the effects of pressure-induced precipitate formation on the I-II phase transitions in a variety of binary semiconductors and make predictions of when this effect should be important.

  8. Solidification of II-VI Compounds in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Volz, M. P.; Mazuruk, K.; Motakef, S.; Dudley, M.; Matyi, R.

    1999-01-01

    This project is aimed at using a rotating magnetic field (RMF) to control fluid flow and transport during directional solidification of elemental and compound melts. Microgravity experiments have demonstrated that small amounts of residual acceleration of less than a micro-g can initiate and prolong fluid flow, particularly when there is a static component of the field perpendicular to the liquid solid interface. Thus a true diffusion boundary layer is not formed, and it becomes difficult to verify theories of solidification or to achieve diffusion controlled solidification. The RMF superimposes a stirring effect on an electrically conducting liquid, and with appropriate field strengths and frequencies, controlled transport of material through a liquid column can be obtained. As diffusion conditions are precluded and complete mixing conditions prevail, the technique is appropriate for traveling solvent zone or float zone growth methods in which the overall composition of the liquid can be maintained throughout the growth experiment. Crystals grown by RMF techniques in microgravity in previous, unrelated missions have shown exceptional properties. The objective of the project is two-fold, namely (1) using numerical modeling to simulate the behavior of a solvent zone with applied thermal boundary conditions and demonstrate the effects of decreasing gravity levels, or an increasing applied RMF, or both, and (2) to grow elements and II-VI compounds from traveling solvent zones both with and without applied RMFs, and to determine objectively how well the modeling predicts solidification parameters. Numerical modeling has demonstrated that, in the growth of CdTe from a tellurium solution, a rotating magnetic field can advantageously modify the shape of the liquid solid interface such that the interface is convex as seen from the liquid. Under such circumstances, the defect structure is reduced as any defects which are formed tend to grow out and not propagate. The flow

  9. Dielectric response of II-VI semiconductor core-shell ensembles: Study of the lossless optical condition

    NASA Astrophysics Data System (ADS)

    de la Cruz, R. M.; Kanyinda-Malu, C.

    2014-09-01

    We theoretically investigate optical properties of II-VI core-shell distribution mixtures made of two type-I sized-nanoshells as a plausible negative dielectric function material. The nonlocal optical response of the semiconductor QD is described by using a resonant excitonic dielectric function, while the shell response is modeled with Demangeot formula. Achieving the zero-loss at an optical frequency ω, i.e., ɛeff =ɛeff‧ + iɛeff″ with ɛeff‧ < 0 and ɛeff″ = 0, is of fundamental importance in nanophotonics. Resonant states in semiconductors provide a source for negative dielectric function provided that the dipole strength and the oscillator density are adequate to offset the background. Furthermore, the semiconductor offers the prospect of pumping, either optically or electrically, to achieve a gain mechanism that can offset the loss. We analyse optimal conditions that must be satisfied to achieve semiconductor-based negative index materials. By comparing with II-VI semiconductor quantum dots (QDs) previously reported in the literature, the inclusion of phonon and shell contributions in the ɛeff along with the finite barrier Effective Mass Approximation (EMA) approach, we found similar qualitative behaviours for the ɛeff. The lossless optical condition along with ɛeff‧ < 0 is discussed in terms of sizes, volume fractions and embedding medium of the mixtures' distributions. Furthermore, we estimated optical power to maintain nanocrystals density in excited states and this value is less than that previously obtained in II-VI semiconductor QDs.

  10. Luminescence and Electroluminescence of Nd, Tm and Yb Doped GaAs and some II-Vi Compounds

    DTIC Science & Technology

    1994-02-28

    isoelectronic trap. We have evidence that II-VI semiconductors, ZnTe doped with oxygen -electron the other RE ions in IlI-V semiconductors can occupy traps...act as donors exciton. or acceptors. The important roles of oxygen on RE It has been well established that the "simple" isoelect- luminescence have...agreement with experimnt, over a wide rang of genration rates. T electric field InP:.Yb photoun~escence quenching was investigated and reported for the

  11. Electronic Levels Of Cr2+ Ion Doped In II-VI Compounds Of ZnS - Crystal Field Treatment

    NASA Astrophysics Data System (ADS)

    Ivaşcu, Simona

    2012-12-01

    The aim of present paper is to report the results on the modeling of the crystal field and spin-Hamiltonian parameters of Cr2+ doped in II-VI host matrix ZnS and simulate the energy levels scheme of such system taken into account the fine interactions entered in the Hamiltonian of the system. All considered types of such interaction are expected to give information on the new peculiarities of the absorption and emission bands, as well as of non-radiative transitions between the electronic states of impurity ions. The obtained results were disscused, compared with similar obtained results in literature and with experimental data.

  12. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; hide

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  13. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  14. Cross-sectional scanning tunneling microscopy study on II-VI multilayer structures

    NASA Astrophysics Data System (ADS)

    Wierts, A.; Ulloa, J. M.; ćelebi, C.; Koenraad, P. M.; Boukari, H.; Maingault, L.; André, R.; Mariette, H.

    2007-10-01

    Cross-sectional scanning tunneling microscopy is used to study in the atomic scale the structural properties of ZnSeTe /ZnTe multiple quantum wells and N:ZnTe delta-doped structures. Some peculiar effects are found on the cleaved (110) ZnTe surface plane, which have not been observed in III-V semiconductors. In particular, cleavage induced monatomic wide vacancy chains are always present on the Te sublattice. Furthermore, the semiconductor surface is manipulated when certain positive voltages are applied to the sample. Regarding the heterostructures, the ZnSeTe /ZnTe quantum wells are found to have abrupt interfaces and the Se concentration is determined to be significantly larger than the nominal value.

  15. Elastico-mechanoluminescence and crystal-structure relationships in persistent luminescent materials and II-VI semiconductor phosphors

    NASA Astrophysics Data System (ADS)

    Chandra, B. P.; Chandra, V. K.; Jha, Piyush

    2015-04-01

    Elastico-mechanoluminescence (EML) has recently attracted the attention of a large number of researchers because of its potential in different types of mechano-optical devices. For understanding the mechanism of EML the relationships between elastico-mechanoluminescence (EML) and crystal-structure of a large number of persistent luminescent materials and II-VI semiconductor phosphors known to date are investigated. It is found that, although most of the non-centrosymmetric crystals exhibit EML, certain non-centrosymmetric crystals do not show EML. Whereas, many centrosymmetric crystals do not exhibit EML, certain centrosymmetric crystals exhibit EML. Piezoelectric ZnS:Cu,Cl single crystals do not show EML, but piezoelectric ZnS:Cu,Cl microcrystalline phosphors show very intense EML. Piezoelectric single crystals of undoped ZnS do not show EML. It seems that EML is related to local piezoelectrification near the impurities in crystals where piezoelectric constant is high. Suitable piezoelectric field near the local piezoelectric region and stable charge carriers in traps are required for appearance of EML. The EML of persistent luminescent materials and II-VI semiconductor phosphors can be understood on the basis of piezoelectrically-induced trap-depth reduction model of EML. Using suitable dopants both in non-centrosymmetric and centrosymmetric crystals intense elastico-mechanoluminescent materials emitting desired colours can be tailored, which may find applications in several mechano-optical devices.

  16. Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in II-VI semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chishti, Sabiq; Ghosh, Bahniman; Bishnoi, Bhupesh

    2015-02-01

    We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms considered are acoustic phonon scattering, surface roughness scattering, polar optical phonon scattering, and spin flip scattering. The II-VI materials used in our study are CdS, CdSe, ZnO and ZnS. The spin transport behaviour is first studied by varying the temperature (4-500 K) at a fixed diameter of 10 nm and also by varying the diameter (8-12 nm) at a fixed temperature of 300 K. For II-VI compounds, the dominant mechanism is for spin relaxation; D'yakonovPerel and Elliot Yafet have been actively employed in the first order model to simulate the spin transport. The dependence of the spin relaxation length (SRL) on the diameter and temperature has been analyzed.

  17. II-VI Quantum Cascade emitters in the 6-8μm range.

    PubMed

    Garcia, Thor A; De Jesus, Joel; Ravikumar, Arvind P; Gmachl, Claire F; Tamargo, Maria C

    2016-08-01

    We present the growth and characterization of ZnCdSe/ZnCdMgSe quantum cascade (QC) heterostructures grown by molecular beam epitaxy (MBE) and designed to operate at 6-8μm. These structures utilize the better-understood ZnCdMgSe with InP lattice matched compositions yielding a bandgap of 2.80 eV as compared to previous work which used ZnCdMgSe compositions with bandgaps at 3.00 eV. Grown structures posses good structural and optical properties evidenced in X-ray diffraction and photoluminescence studies. Fabricated mesa devices show temperature dependent I-V measurements with differential resistance of 3.6 Ω, and a turn on voltage of 11V consistent with design specifications. Electroluminescence was observed in these devices up to room temperature with emission centered at 7.1 μm and line widths of ∼16%(ΔE/E) at 80K. The results show that these are well-behaved electroluminescent structures. Addition of waveguide layers and further improvements in well barrier interfaces are being pursued in efforts to demonstrate lasing.

  18. Depth resolved cathodoluminescence and microanalysis of ZnCdSe/ZnSe quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Shakhmin, Alexey A.; Sedova, Irina V.; Sorokin, Sergey V.; Zamoryanskaya, Maria V.

    2013-04-01

    The novel approaches to study the II-VI-based laser heterostructures using cathodoluminescence and electron probe microanalysis techniques are described in detail. The heterostructures were grown by molecular beam epitaxy on GaAs (0 0 1) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well embedded in Zn(Mg)SSe/ZnSe graded index waveguide. The microanalysis technique based on the intensity measurements of characteristic X-rays has been applied to determine both the composition of ZnCdSe quantum well layer and its position within heterostructure. The depth resolved cathodoluminescence technique has been applied for the transport studies of electron beam generated carriers in heterostructure. The cathodoluminescence intensity of ZnCdSe quantum well has been measured as a function of electron beam energy. The Monte-Carlo simulations of carrier generation distribution within the heterostructure under electron beam irradiation have been used for fitting of experimental results. It made possible the nondestructive characterization of the multilayer heterostructure to estimate both deficiency and carrier transport length.

  19. Surface Chemistry and Transport Properties of II-VI Semiconductor Nanowires

    NASA Astrophysics Data System (ADS)

    Paudel, Pravin

    Semiconductor nanowires have been widely studied due to their unique properties such as width comparable to critical length-scales, high aspect ratio, and high carrier mobility. These unique properties make them a suitable candidate for various optical and electronic devices like photovoltaics, photodetectors, and field effect transistors. The nanowire surface plays an important role in the performance of these devices because of their high surface to volume ratio. The larger surface area of nanowires may provide better charge separation than planar heterostructures in photovoltaics by providing shorter distance to move for carrier before separation, however, presence of surface states may lead to the recombination of photo-generated carriers, limiting the amount of charge separation. In order to remove these surface states, ligands can be attached to the surface of nanowires. In this work CdS and CdSe nanowires are grown through the high temperature Vapor-Liquid-Solid (VLS) process. VLS process yields single crystalline, low defect nanowires with controllable length and diameter. In order to show ligand binding on nanowire surface, CdS nanowires were treated with a dye-labeled polymer. Fluorescence microscopy and spectroscopy were used to confirm ligand binding. Fluorescence microscopy can also be used to show the kinetics of ligand binding on nanowire surfaces. In order to control the electronic properties of the nanowire surfaces, nanowires were treated with solution phase and vapor phase reagents. Photoluminescence measurements and transport measurements were performed before and after the chemical treatment to see the consequences of ligand binding on the optical and electronic properties of nanowires.

  20. Chemical composition of matrix-embedded ternary II-VI nanocrystals derived from first- and second-order Raman spectra

    NASA Astrophysics Data System (ADS)

    Azhniuk, Yu. M.; Hutych, Yu. I.; Lopushansky, V. V.; Prymak, M. V.; Gomonnai, A. V.; Zahn, D. R. T.

    2016-12-01

    A one- and multiphonon Raman scattering study is performed for an extensive set of CdS1-xSex, Cd1-yZnyS, Cd1-yZnySe, and CdSe1-xTex nanocrystals to investigate the applicability of first- and second-order Raman spectra for the determination of the matrix-embedded ternary nanocrystal composition. For one-mode ternary systems both the LO and 2LO phonon frequencies in the Raman spectra are shown to be a good measure of the nanocrystal composition. For two-mode systems, the approaches based on the difference of the LO phonon frequencies (first-order Raman spectra) or double LO overtone and combination tone frequencies (second-order Raman spectra) as well as on the LO phonon band intensity ratios are analysed. The weak electron-phonon coupling in the II-VI nanocrystals and the polaron constant values for the nanocrystal sublattices are discussed.

  1. Effect of Residual Accelerations on the Crystal Growth of II-VI Semiconductors in Low Earth Orbit

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Su, C.-H.; Szofran, F. R.; Scripa, R. N.; Cobb, S. D.; Lehoczky, S. L.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The paper compares and summarizes the effects of residual acceleration during crystal growth on the compositional variation of two II-VI solid solution binary alloys (Hg(0.8)Cd(0.2)Te and Hg(0.84)Zn(0.16)Te). The crystals were grown by directional solidification on the second United States Microgravity Payload (USMP-2) and the first United States Microgravity Laboratory (USML-1) missions, respectively. For both alloys, changes in the direction and magnitude of the quasisteady acceleration vector (approximately 0.4- 1 mu g) caused large changes in the radial compositional distribution that demonstrates the importance of residual accelerations, even in the submicrogravity range, for large density gradients in the melt and slow solidification rates. The observed compositional variations will be correlated to changes in the radial flow velocities ahead of the solidification interface.

  2. Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators

    NASA Astrophysics Data System (ADS)

    Chan, P.-Y.; Gogna, M.; Suarez, E.; Karmakar, S.; Al-Amoody, F.; Miller, B. I.; Jain, F. C.

    2011-08-01

    This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal-oxide-semiconductor (MOS) device, and demonstrates the threshold voltage shift required in nonvolatile memory devices using a floating gate quantum dot layer. An InGaAs-based nonvolatile memory MOS device was fabricated using a high- κ II-VI tunnel insulator stack and self-assembled GeO x -cladded Ge quantum dots as the charge storage units. A Si3N4 layer was used as the control gate insulator. Capacitance-voltage data showed that, after applying a positive voltage to the gate of a MOS device, charges were being stored in the quantum dots. This was shown by the shift in the flat-band/threshold voltage, simulating the write process of a nonvolatile memory device.

  3. Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Luo, Jun-Wei; Wei, Su-Huai

    2015-02-01

    Using the first-principles density functional theory method, we systematically investigate the structural and electronic properties of heterovalent interfaces of the lattice-matched II-VI/III-V semiconductors, i.e., ZnTe/GaSb, ZnSe/GaAs, ZnS/GaP, and ZnO/GaN. We find that, independent of the orientations, the heterovalent superlattices with period n =6 are energetically more favorable to form nonpolar interfaces. For the [001] interface, the stable nonpolar interfaces are formed by mixing 50% group-III with 50% group-II atoms or by mixing 50% group-V with 50% group-VI atoms; for the [111] nonpolar interfaces, the mixings are 25% group-III (II) and 75% group-II (III) atoms or 25% group-V (VI) and 75% group-VI (V) atoms. For all the nonpolar interfaces, the [110] interface has the lowest interfacial energy because it has the minimum number of II-V or III-VI "wrong bonds" per unit interfacial area. The interfacial energy increases when the atomic number of the elements decreases, except for the ZnO/GaN system. The band alignments between the II-VI and III-V compounds are drastically different depending on whether they have mixed-cation or mixed-anion interfaces, but the averaged values are nearly independent of the orientations. Similarly, other than ZnO/GaN, the valence-band offsets also increase as the atomic number of the elements decreases. The abnormal trends in interfacial energy and band alignment for ZnO/GaN are primarily attributed to the very short bond lengths in this system. The underlying physics behind these trends are explained.

  4. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  5. II-VI colloidal quantum-dot/quantum-rod heterostructures under electric field effect and their energy transfer rate to graphene

    NASA Astrophysics Data System (ADS)

    Zahra, H.; Elmaghroui, D.; Fezai, I.; Jaziri, S.

    2016-11-01

    We theoretically investigate the energy transfer between a CdSe/CdS Quantum-dot/Quantum-rod (QD/QR) core/shell structure and a weakly doped graphene layer, separated by a dielectric spacer. A numerical method assuming the realistic shape of the type I and quasi-type II CdSe/CdS QD/QR is developed in order to calculate their energy structure. An electric field is applied for both types to manipulate the carriers localization and the exciton energy. Our evaluation for the isolated QD/QR shows that a quantum confined Stark effect can be obtained with large negative electric filed while a small effect is observed with positive ones. Owing to the evolution of the carriers delocalization and their excitonic energy versus the electric field, both type I and quasi-type II QD/QR donors are suitable as sources of charge and energy. With a view to improve its absorption, the graphene sheet (acceptor) is placed at different distances from the QD/QR (donor). Using the random phase approximation and the massless Dirac Fermi approximation, the quenching rate integral is exactly evaluated. That reveals a high transfer rate that can be obtained with type I QD/QR with no dependence on the electric field. On the contrary, a high dependence is obtained for the quasi-type II donor and a high fluorescence rate from F = 80 kV/cm. Rather than the exciton energy, the transition dipole is found to be responsible for the evolution of the fluorescence rate. We find also that the fluorescence rate decreases with increasing the spacer thickness and shows a power low dependence. The QD/QR fluorescence quenching can be observed up to large distance which is estimated to be dependent only on the donor exciton energy.

  6. (001)-surface-induced bulk states and surface resonances in II-VI zinc-blende semiconductors

    NASA Astrophysics Data System (ADS)

    Olguín, D.; Baquero, R.

    1995-06-01

    In a previous paper [Phys. Rev. 50, 1980 (1994)] we gave an account of the nondispersive band found experimentally at -4.4 for CdTe(001) by Niles and Höchst. We have characterized this band as a surface-induced bulk state. In a second paper we showed that a similar state does exist in II-VI and III-V zinc-blende semiconductor compounds. In this paper we show that there are more such states within the valence-band energy interval. We use tight-binding Hamiltonians and the surface-Green's-function matching method to calculate the surface resonances and surface-induced bulk states in the zinc-blende semiconductors CdTe, CdSe, ZnTe, and ZnSe. We find one distinctive surface resonance for the cation- and two for the anion-terminated (001) surface and three (001)-surface-induced bulk states with energies that correspond to the value of the heavy-hole, light-hole, and spin-orbit bands at X.

  7. Correlation of Schottky constants with interatomic distances of selected I-VII and II-VI compounds

    NASA Astrophysics Data System (ADS)

    Wiedemeier, Heribert

    2013-10-01

    The observed linear (Na-, K-halides) and near-linear (Mg-, Sr-, Zn-, Cd-, and Hg-chalcogenides) dependences of Schottky constants on reciprocal interatomic distances yield the relation logKS=((ss1/T)+is)1/d(A-B)+(si1/T)+ii, where KS is the product of metal and non-metal thermal equilibrium vacancy concentrations, and ss, is, si and ii are the group specific slope and intercept values obtained from an extended analysis of the above log KS versus 1/d(A-B) data. The previously reported linear dependences of log KS on the Born-Haber lattice energies [1] are the basis for combining the earlier results [1] with the Born-Mayer lattice energy equation to yield a new thermodynamic relationship, namely logKS=-(2.303(c(B-M)/d(A-B)-Ie), where c(B-M) is the product of the constants of the Born-Mayer equation and Ie is the metal ionization energy of the above compounds. These results establish a correlation between point defect concentrations and basic thermodynamic, coulombic, and structural solid state properties for selected I-VII and II-VI semiconductor materials.

  8. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe.

    PubMed

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-04-05

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors.

  9. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    PubMed Central

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  10. Exchange couplings for Mn ions in CdTe: Validity of spin models for dilute magnetic II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Linneweber, Thorben; Bünemann, Jörg; Löw, Ute; Gebhard, Florian; Anders, Frithjof

    2017-01-01

    We employ density-functional theory (DFT) in the generalized gradient approximation (GGA) and its extensions GGA +U and GGA+Gutzwiller to calculate the magnetic exchange couplings between pairs of Mn ions substituting Cd in a CdTe crystal at very small doping. DFT(GGA) overestimates the exchange couplings by a factor of 3 because it underestimates the charge-transfer gap in Mn-doped II-VI semiconductors. Fixing the nearest-neighbor coupling J1 to its experimental value in GGA +U , in GGA+Gutzwiller, or by a simple scaling of the DFT(GGA) results provides acceptable values for the exchange couplings at second-, third-, and fourth-neighbor distances in Cd(Mn)Te, Zn(Mn)Te, Zn(Mn)Se, and Zn(Mn)S. In particular, we recover the experimentally observed relation J4>J2,J3 . The filling of the Mn 3 d shell is not integer, which puts the underlying Heisenberg description into question. However, using a few-ion toy model the picture of a slightly extended local moment emerges so that an integer 3 d -shell filling is not a prerequisite for equidistant magnetization plateaus, as seen in experiment.

  11. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    DTIC Science & Technology

    2015-08-27

    effect is present in the device. The EQE was determined by measuring the photocurrent under a 633 nm laser light confined onto the pixel under test...photodetector for visible light detection and a well- developed InSb PIN sub-photodetector for MWIR detection, which are electrically connected by a...the desire to use III-V substrates for II-VI material epitaxial growth, and the possibility of developing novel optoelectronic devices utilizing III-V

  12. Photoinduced electron donor/acceptor processes in colloidal II-VI semiconductor quantum dots and nitroxide free radicals

    NASA Astrophysics Data System (ADS)

    Dutta, Poulami

    Electron transfer (ET) processes are one of the most researched topics for applications ranging from energy conversion to catalysis. An exciting variation is utilizing colloidal semiconductor nanostructures to explore such processes. Semiconductor quantum dots (QDs) are emerging as a novel class of light harvesting, emitting and charge-separation materials for applications such as solar energy conversion. Detailed knowledge of the quantitative dissociation of the photogenerated excitons and the interfacial charge- (electron/hole) transfer is essential for optimization of the overall efficiency of many such applications. Organic free radicals are the attractive counterparts for studying ET to/from QDs because these undergo single-electron transfer steps in reversible fashion. Nitroxides are an exciting class of stable organic free radicals, which have recently been demonstrated to be efficient as redox mediators in dye-sensitized solar cells, making them even more interesting for the aforementioned studies. This dissertation investigates the interaction between nitroxide free radicals TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl), 4-amino-TEMPO (4-amino- 2,2,6,6-tetramethylpiperidine-1-oxyl) and II-VI semiconductor (CdSe and CdTe) QDs. The nature of interaction in these hybrids has been examined through ground-state UV-Vis absorbance, steady state and time-resolved photoluminescence (PL) spectroscopy, transient absorbance, upconversion photoluminescence spectroscopy and electron paramagnetic resonance (EPR). The detailed analysis of the PL quenching indicates that the intrinsic charge transfer is ultrafast however, the overall quenching is still limited by the lower binding capacities and slower diffusion related kinetics. Careful analysis of the time resolved PL decay kinetics reveal that the decay rate constants are distributed and that the trap states are involved in the overall quenching process. The ultrafast hole transfer from CdSe QDs to 4-Amino TEMPO observed

  13. Bioengineered II-VI semiconductor quantum dot-carboxymethylcellulose nanoconjugates as multifunctional fluorescent nanoprobes for bioimaging live cells.

    PubMed

    Mansur, Alexandra A P; Mansur, Herman S; Mansur, Rafael L; de Carvalho, Fernanda G; Carvalho, Sandhra M

    2017-08-19

    Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M=Cd, Pb, Zn, X=S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Study of surface and bulk electronic structure of II-VI semiconductor nanocrystals using Cu as a nanosensor.

    PubMed

    Grandhi, G Krishnamurthy; Tomar, Renu; Viswanatha, Ranjani

    2012-11-27

    Efficiency of the quantum dots based solar cells relies on charge transfer at the interface and hence on the relative alignment of the energy levels between materials. Despite a high demand to obtain size specific band offsets, very few studies exist where meticulous methods like photoelectron spectroscopy are used. However, semiconductor charging during measurements could result in indirect and possibly inaccurate measurements due to shift in valence and conduction band position. Here, in this report, we devise a novel method to study the band offsets by associating an atomic like state with the conduction band and hence obtaining an internal standard. This is achieved by doping copper in semiconductor nanocrystals, leading to the development of a characteristic intragap Cu-related emission feature assigned to the transition from the conduction band to the atomic-like Cu d state. Using this transition we determine the relative band alignment of II-VI semiconductor nanocrystals as a function of size in the below 10 nm size regime. The results are in excellent agreement with the available photoelectron spectroscopy data as well as the theoretical data. We further use this technique to study the excitonic band edge variation as a function of temperature in CdSe nanocrystals. Additionally, surface electronic structure of CdSe nanocrystals have been studied using quantitative measurements of absolute quantum yield and PL decay studies of the Cu related emission and the excitonic emission. The role of TOP and oleic acid as surface passivating ligand molecules has been studied for the first time.

  15. New quantum cascade laser architectures: II-VI quantum cascade emitters, high k-space lasing, and short injectors

    NASA Astrophysics Data System (ADS)

    Franz, Kale J.

    Quantum cascade (QC) lasers are today's most capable mid-infrared light sources. With up to watt-level room temperature emission over a broad swath of mid-infrared wavelengths, these tiny semiconductor devices enable a variety of applications and technologies such as ultra-sensitive systems for detecting trace molecules in the vapor phase. The foundation of a QC structure lies in alternating hundreds of wide- and narrow-bandgap semiconductor layers to form a coupled quantum well system. In this way, the laws of quantum mechanics are used to precisely engineer electron transport and create artificial optical transitions. The result is a material with capabilities not found in nature, a truly "designer" material. As a central theme in this thesis, we stress the remarkable flexibility of the quantum cascade---the ability to highly tailor device structure for creative design concepts. The QC idea, in fact, relies on no particular material system for its implementation. While all QC lasers to date have been fabricated from III--V materials such as InGaAs/AlInAs, I detail our preliminary work on ZnCdSe/ZnCdMgSe---a II--VI materials system---where we have demonstrated electroluminescence. We then further discuss how the inherent QC flexibility can be exploited for new devices that extend QC performance and capabilities. In this regard, we offer the examples of excited state transitions and short injectors. Excited state transitions are an avenue to enhancing optical gain, which is especially needed for longer-wavelength devices where optical losses hinder performance. Likewise, shortening the QC injector length over a conventional QC structure has powerful implications for threshold current, output power, and wall-plug efficiency. In both cases, novel physical effects are discovered. Pumping electrons into highly excited states led to the discovery of high k-space lasing from highly non-equilibrium electron distributions. Shortening QC injector regions allowed us to

  16. Power Scaling Feasibility or Chromium-Doped II-VI Laser Sources and the Demonstration of a Chromium-Doped Zinc Selenide Face-Cooled Disk Laser

    DTIC Science & Technology

    2002-03-01

    demonstrated, producing 4-ps pulses[6, 7]. Diode pumping has been shown to be possible using diode lasers in the 1.5- 1.8 µm range[8, 9]. Thus, chromium...power. Efficient diode laser pumping of Cr2+:II-VI materials at the 10-20 W power level is not yet possible, because the 5-8 µs excited state...lifetime of Cr2+ requires pumping intensities of at least 2-3 kW/cm2 for efficient laser operation, higher than what existing high power diode lasers can

  17. Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II-VI and III-V MWIR Detector Technologies for Space Applications

    NASA Astrophysics Data System (ADS)

    Jenkins, Geoffrey D.; Morath, Christian P.; Cowan, Vincent M.

    2017-09-01

    The degradation of the minority-carrier recombination lifetime of various III-V nB n and II-VI HgCdTe midwave-infrared space detector materials under stepwise 63-MeV proton irradiation up to fluence of 7.5 × 1011 cm-2 and above has been measured using time-resolved photoluminescence while samples were held at 120 K to limit thermal annealing. As expected, the recombination rate of each sample was found to increase with proton fluence at a nearly constant rate, implying a near-linear increase in defect concentration. The rate of change of the carrier recombination rate, herein called the minority-carrier lifetime damage factor, was then plotted as a function of the initial recombination rate for each sample. Juxtaposing the III-V and II-VI results revealed a distinct disparity, with the incumbent detector material HgCdTe being roughly an order of magnitude more radiation tolerant to displacement damage from proton irradiation than any of the nB n materials. The results for the latter also suggest some degree of interrelation between the damage factor and initial lifetime. The behavior of the lifetime of each material under annealing revealed that HgCdTe exhibited nearly 100% recovery at 295 K whereas III-V materials recovered to only about 50% under the same conditions.

  18. Electronic structure of and quantum size effect in III-V and II-VI semiconducting nanocrystals using a realistic tight binding approach

    NASA Astrophysics Data System (ADS)

    Viswanatha, Ranjani; Sapra, Sameer; Saha-Dasgupta, Tanusri; Sarma, D. D.

    2005-07-01

    We analyze the electronic structure of group III-V semiconductors obtained within full potential linearized augmented plane wave (FP-LAPW) method and arrive at a realistic and minimal tight-binding model, parametrized to provide an accurate description of both valence and conduction bands. It is shown that the cation sp3 - anion sp3d5 basis along with the next nearest neighbor model for hopping interactions is sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s* orbital, employed previously. Similar analyses were also performed for the II-VI semiconductors, using the more accurate FP-LAPW method compared to previous approaches, in order to enhance reliability of the parameter values. Using these parameters, we calculate the electronic structure of III-V and II-VI nanocrystals in real space with sizes ranging up to about 7nm in diameter, establishing a quantitatively accurate description of the bandgap variation with sizes for the various nanocrystals by comparing with available experimental results from the literature.

  19. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. First technical progress report, 15 April 1980-30 June 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-07-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Factors limiting the short circuit current of the n-CdSe/methanol/ferro-ferricyanide system to 17.5 mA/cm/sup 2/ have been identified. The principal limiting factor is apparently specific adsorption of hexacyanoferrate species on the electrode surface which occurs at higher redox couple concentrations and slows the overall charge transfer process. Ion pairing also occurs, resulting in a low mass transport rate (smaller diffusion coefficients and increased solution viscosity), and probably enhances the degree of specific adsorption. Improvements in the performance of this system will require mitigation of the interactions between the redox species and the electrode surface, e.g., via electrolytes with reduced ion-pairing tendencies or the use of electrode surface films. Photoelectrochemically generated polypyrrole films have been shown to protect CdX photoanodes from dissolution while permitting electron exchange with the electrolyte. Current effort is directed toward improving the film adhesion and optimizing the performance characteristics.

  20. A review of recent work on stresses and strains in semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Jain, S. C.; Willander, M.; Pinardi, K.; Maes, H. E.

    1997-01-01

    We first discuss the work on strain and critical thickness of large area lattice mismatched epilayers of GeSi, InGaAs and II-VI semiconductors. A summary of Finite Element (FE) calculations of stresses in stripe-substrate heterostructures is then given. Calculated stresses for novel stripe designs are also given. The results are then applied to interpret experiments. Raman and luminescence experiments on stripes of GaAs/Si, GeSi/Si and InGaAs/GaAs, Raman experiments on LOCOS structures and on GeSi quantum wires and quantum dots and luminescence experiments on InGaAs quantum wires are included in the discussion.

  1. Heterostructure integrated thermionic coolers

    NASA Astrophysics Data System (ADS)

    Shakouri, Ali; Bowers, John E.

    1997-09-01

    Thermionic emission in heterostructures is proposed for integrated cooling of high power electronic and optoelectronic devices. This evaporative cooling is achieved by selective emission of hot electrons over a barrier layer from the cathode to the anode. It is shown that with available high electron mobility and low thermal conductivity materials, and with optimized conduction band offsets in heterostructures, single-stage room temperature cooling of up to 20°-40° over thicknesses of the order of microns is possible.

  2. Use of a ZnTe:N/ZnO: A1 bilayer in thin-flim, multi-junction II-VI solar cells.

    NASA Astrophysics Data System (ADS)

    Rich, Geoffrey

    2002-03-01

    Development of a low-cost, thin-film tandem solar cell structure utilizing II-VI compound semiconductors is described. The structure consists of a CdS/CdTe top cell to which a bilayer of ZnTe:N/ZnO:Al is applied, subsequently bonded to a thin-film or crystalline bottom cell. The bilayer forms a back contact to the top cell, with an appropriate optical transmission and lateral conductivity characteristic for use in a four-terminal tandem device. Previous work at the University of Toledo has shown that ZnTe can be effectively doped by reactive sputtering in nitrogen, and demonstration of ZnTe:N as a component of a back contact to CdS/CdTe heterojunctions has been demonstrated [1]. The addition of a ZnO:Al layer provides the necessary lateral conductivity required by a four-terminal tandem solar cell design. Test structures consisting of Al/ZnTe:N/ZnO:Al/Al, deposited on glass by magnetron sputtering, are characterized optically and electrically. The ZnTe:N/ZnO:Al bilayer is applied to thin-film CdS/CdTe heterojunctions deposited by rapid, low-cost techniques (provided by First Solar, LLC). With the addition of a metallic grid, functioning top cell structures are created and measured. By bonding a bottom cell to this structure, a complete dual-junction, four-terminal device is constructed and demonstrated. [1] J. Drayton, A. Gupta, K. Makhratchev, K. Price, R. Bohn, and A. Compaan, Mat. Res. Soc. Symp. Proc. 668, “II-VI Compound Semiconductor Photovoltaic Materials,” ed. by R Noufi, R. W. Birkmire, D. Lincot, H. W. Schock.

  3. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  4. Topological States of Heterostructures

    NASA Astrophysics Data System (ADS)

    Usanmaz, Demet; Nath, Pinku; Plata, Jose J.; Buongiorno Nardelli, Marco; Fornari, Marco; Curtarolo, Stefano

    Topological insulators (TIs) have exotic properties, such as having insulating behavior in the bulk and metallic states at the surface [1]. Observations of metallic states rely on the spin-orbit induced band inversion in bulk materials and are protected by time-reversal symmetry or crystal symmetry [ 2 ]. These remarkable characteristics of TIs give rise to various applications from spintronics to quantum computers. In order to broaden the range of applications of TIs and make it more effective, an exploration of high quality heterostructures are required. Creating heterostructures of TIs has recently demonstrated to be advantageous for controlling electronic properties [3]. Inspired by these interesting properties, we have investigated the topological interface states of heterostructures.

  5. Vesicles formed in aqueous mixtures of cholesterol and imidazolium surface active ionic liquid: a comparison with common cationic surfactant by water dynamics.

    PubMed

    Mandal, Sarthak; Kuchlyan, Jagannath; Ghosh, Surajit; Banerjee, Chiranjib; Kundu, Niloy; Banik, Debasis; Sarkar, Nilmoni

    2014-06-05

    The formation of stable unilamellar vesicles which hold great potential for biological as well as biomedical applications has been reported in the aqueous mixed solution of a surface active ionic liquid (SAIL), 1-hexadecyl-3-methylimidazolium chloride ([C16mim]Cl) and cholesterol. To make a comparison we have also shown the formation of such stable vesicles using a common cationic surfactant, benzyldimethylhexadecylammonium chloride (BHDC) which has a similar alkyl chain length but different headgroup region to that of [C16mim]Cl. It has been revealed from dynamic light scattering (DLS), transmission electron microscopy (TEM), nuclear magnetic resonance (NMR), and other optical spectroscopic techniques that the micelles of [C16mim]Cl and BHDC in aqueous solutions transform into stable unilamellar vesicles upon increasing concentration of cholesterol. We find that, as the concentration of cholesterol increases, the solvation and rotational relaxation time of C153 in [C16mim]Cl/cholesterol solution as well as in BHDC/cholesterol solution gradually increases indicating a significant decrease in the hydration behavior around the self-assemblies upon micelle-vesicle transition. However, the extent of increase in solvation and rotational relaxation time is more prominent in the case of [C16mim]Cl/cholesterol solutions than in the BHDC/cholesterol system. This indicates that [C16mim]Cl/cholesterol vesicular membranes are comparatively less hydrated and more rigid than the BHDC/cholesterol vesicular bilayer.

  6. Vertical 2D Heterostructures

    NASA Astrophysics Data System (ADS)

    Lotsch, Bettina V.

    2015-07-01

    Graphene's legacy has become an integral part of today's condensed matter science and has equipped a whole generation of scientists with an armory of concepts and techniques that open up new perspectives for the postgraphene area. In particular, the judicious combination of 2D building blocks into vertical heterostructures has recently been identified as a promising route to rationally engineer complex multilayer systems and artificial solids with intriguing properties. The present review highlights recent developments in the rapidly emerging field of 2D nanoarchitectonics from a materials chemistry perspective, with a focus on the types of heterostructures available, their assembly strategies, and their emerging properties. This overview is intended to bridge the gap between two major—yet largely disjunct—developments in 2D heterostructures, which are firmly rooted in solid-state chemistry or physics. Although the underlying types of heterostructures differ with respect to their dimensions, layer alignment, and interfacial quality, there is common ground, and future synergies between the various assembly strategies are to be expected.

  7. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  8. Lanthanide sensitization in II-VI semiconductor materials: a case study with terbium(III) and europium(III) in zinc sulfide nanoparticles.

    PubMed

    Mukherjee, Prasun; Shade, Chad M; Yingling, Adrienne M; Lamont, Daniel N; Waldeck, David H; Petoud, Stéphane

    2011-04-28

    This work explores the sensitization of luminescent lanthanide Tb(3+) and Eu(3+) cations by the electronic structure of zinc sulfide (ZnS) semiconductor nanoparticles. Excitation spectra collected while monitoring the lanthanide emission bands reveal that the ZnS nanoparticles act as an antenna for the sensitization of Tb(3+) and Eu(3+). The mechanism of lanthanide ion luminescence sensitization is rationalized in terms of an energy and charge transfer between trap sites and is based on a semiempirical model, proposed by Dorenbos and co-workers (Dorenbos, P. J. Phys.: Condens. Matter 2003, 15, 8417-8434; J. Lumin. 2004, 108, 301-305; J. Lumin. 2005, 111, 89-104. Dorenbos, P.; van der Kolk, E. Appl. Phys. Lett. 2006, 89, 061122-1-061122-3; Opt. Mater. 2008, 30, 1052-1057. Dorenbos, P. J. Alloys Compd. 2009, 488, 568-573; references 1-6.) to describe the energy level scheme. This model implies that the mechanisms of luminescence sensitization of Tb(3+) and Eu(3+) in ZnS nanoparticles are different; namely, Tb(3+) acts as a hole trap, whereas Eu(3+) acts as an electron trap. Further testing of this model is made by extending the studies from ZnS nanoparticles to other II-VI semiconductor materials; namely, CdSe, CdS, and ZnSe.

  9. Collision-induced dissociation of II-VI semiconductor nanocrystal precursors, Cd2+ and Zn2+ complexes with trioctylphosphine oxide, sulfide, and selenide.

    PubMed

    Min, Won Ja; Jung, Sunghan; Lim, Sung Jun; Kim, Yongwook; Shin, Seung Koo

    2009-09-03

    The metal (M = Cd2+ and Zn2+) complexes with trioctylphosphine chalcogenide (TOPE, E = O, S, and Se) are prepared by electrospray ionization, and their relative stabilities and intramolecular reactions are studied by collision-induced dissociation (CID) with Xe under single collision conditions. These metal-TOPE complexes are considered as molecular precursors for the colloidal synthesis of II-VI compound semiconductor nanocrystals employing TOPO as a metal-coordinating solvent and TOPS or TOPSe as a chalcogen precursor. Of the various [M + nTOPE]2+ (n = 2-7) ions generated by ESI, the n = 2-4 complexes are characterized by CID as a function of collision energy. The collision energy at 50% dissociation (E50%) is determined from the cracking curve and the relative stabilities of the complexes are established. Between the two metal ions, the zinc-TOPE complexes are more stable than the cadmium-TOPE complexes when n = 2-3, whereas their stabilities are reversed when n = 4. Of the TOPE, TOPO binds most strongly to the metal ion, while TOPSe does most weakly. Upon CID, loss of TOPE occurs exclusively from the tetra-TOPE complexes, while extensive fragmentation of TOPE takes place from the di-TOPE complexes, showing the signature of the metal chacogenide formation. The nucleation of nanocrystals appears to begin with cracking of [M + 2TOPE]2+ (E = S and Se).

  10. Systematic defect donor levels in III-V and II-VI semiconductors revealed by hybrid functional density-functional theory

    NASA Astrophysics Data System (ADS)

    Petretto, Guido; Bruneval, Fabien

    2015-12-01

    The identification of defect levels from photoluminescence spectroscopy is a useful but challenging task. Density-functional theory (DFT) is a highly valuable tool to this aim. However, the semilocal approximations of DFT that are affected by a band gap underestimation are not reliable to evaluate defect properties, such as charge transition levels. It is now established that hybrid functional approximations to DFT improve the defect description in semiconductors. Here we demonstrate that the use of hybrid functionals systematically stabilizes donor defect states in the lower part of the band gap for many defects, impurities or vacancies, in III-V and in II-VI semiconductors, even though these defects are usually considered as acceptors. These donor defect states are a very general feature and, to the best of our knowledge, have been overlooked in previous studies. The states we identify here may challenge the older assignments to photoluminescent peaks. Though appealing to screen quickly through the possible stable charge states of a defect, semilocal approximations should not be trusted for that purpose.

  11. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    PubMed

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  12. Air-gap heterostructures

    NASA Astrophysics Data System (ADS)

    Heyn, Ch.; Schmidt, M.; Schwaiger, S.; Stemmann, A.; Mendach, S.; Hansen, W.

    2011-01-01

    We demonstrate the fabrication of thin GaAs layers which quasi hover above the underlying GaAs substrate. The hovering layers have a perfect epitaxial relationship to the substrate crystal lattice and are connected to the substrate surface only by lattice matched nanopillars of low density. These air-gap heterostructures are created by combining in situ molecular beam epitaxy compatible self-assembled droplet-etching and ex situ selective wet-chemical etching.

  13. Heterostructure infrared photovoltaic detectors

    NASA Astrophysics Data System (ADS)

    Rogalski, Antoni

    2000-08-01

    HgCdTe remains the most important material for infrared (IR) photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, GaAs/AlGaAs multiple quantum wells, InAs/GaInSb strained layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter which is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapour phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication of almost ideally designed heterojunction photodiodes. In this paper, examples of novel devices based on heterostructures operating in the long wavelength, middle wavelength and short wavelength spectral ranges are presented. Recently, more interest has been focused on p-n junction heterostructures. As infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. HgCdTe heterojunction detectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolour capability in these regions. Recent progress in two-colour HgCdTe detectors is also reviewed.

  14. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    PubMed

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity.

  15. Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures

    DOE PAGES

    Kuciauskas, Darius; Myers, Thomas H.; Barnes, Teresa M.; ...

    2017-02-20

    From time- and spatially resolved optical measurements, we show that extended defects can have a large effect on the charge-carrier recombination in II-VI semiconductors. In CdTe double heterostructures grown by molecular beam epitaxy on the InSb (100)-orientation substrates, we characterized the extended defects and found that near stacking faults the space-charge field extends by 2-5 μm. Charge carriers drift (with the space-charge field strength of 730-1,360 V cm-1) and diffuse (with the mobility of 260 ± 30 cm2 V-1 s-1) toward the extended defects, where the minority-carrier lifetime is reduced from 560 ns to 0.25 ns. Furthermore, the extended defectsmore » are nonradiative recombination sinks that affect areas significantly larger than the typical crystalline grains in II-VI solar cells. From the correlative time-resolved photoluminescence and second-harmonic generation microscopy data, we developed a band-diagram model that can be used to analyze the impact of extended defects on solar cells and other electronic devices.« less

  16. Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures

    NASA Astrophysics Data System (ADS)

    Kuciauskas, Darius; Myers, Thomas H.; Barnes, Teresa M.; Jensen, Søren A.; Allende Motz, Alyssa M.

    2017-02-01

    From time- and spatially resolved optical measurements, we show that extended defects can have a large effect on the charge-carrier recombination in II-VI semiconductors. In CdTe double heterostructures grown by molecular beam epitaxy on the InSb (100)-orientation substrates, we characterized the extended defects and found that near stacking faults the space-charge field extends by 2-5 μm. Charge carriers drift (with the space-charge field strength of 730-1,360 V cm-1) and diffuse (with the mobility of 260 ± 30 cm2 V-1 s-1) toward the extended defects, where the minority-carrier lifetime is reduced from 560 ns to 0.25 ns. Therefore, the extended defects are nonradiative recombination sinks that affect areas significantly larger than the typical crystalline grains in II-VI solar cells. From the correlative time-resolved photoluminescence and second-harmonic generation microscopy data, we developed a band-diagram model that can be used to analyze the impact of extended defects on solar cells and other electronic devices.

  17. Heterostructure terahertz devices.

    PubMed

    Ryzhii, Victor

    2008-08-19

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  18. Preface: Heterostructure terahertz devices

    NASA Astrophysics Data System (ADS)

    Ryzhii, Victor

    2008-08-01

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  19. Femtosecond studies of photoinduced electron dynamics in colloidal quantum-confined II-VI semiconductor nanoparticles: CdS, CdSe and CdZnS

    NASA Astrophysics Data System (ADS)

    Roberti, Trevor

    A variety of synthetic and spectroscopic techniques have been applied to elucidate photoinduced charge carrier processes in II-VI semiconductor quantum dots. These semiconductor nanoparticles exhibit both size-dependent optical tuning due to the quantum-confinement effect and power-dependent absorption, bleach and emission characteristics. Although the tunable-absorption has been well characterized, the subsequent trapping and recombination processes are still under much investigation and are the subject of this dissertation. Particles with vastly differing surfaces, sizes, energetics and solvents have been characterized using various spectroscopic techniques in unison. The primary technique was transient femtosecond near-IR absorption, which was used to characterize charge carrier processes on the subpicosecond and picosecond time scales. UV-visible spectroscopy was used to characterize the size of the particles. Static fluorescence measurements were used to characterize the surface of the particles and the relative amount of radiative recombination. Nanosecond fluorescence measurements were also used to assist in the assignment of the fast, power-dependent near-IR absorption decay. The research reported here makes two fundamental contributions to the photophysics of semiconductor nanoparticles. First, the power-dependent, few picosecond decay process has primarily been assigned to electron-hole recombination via exciton-exciton annihilation. As the power increases, higher order, Auger processes may also arise. The exciton-exciton annihilation mechanism was primarily deduced based on power-dependent fluorescence measurements which exhibited the formation of short-lived exciton fluorescence at high powers. Secondly, many nanoparticle properties and environments were varied in order to better understand the observed picosecond processes and the effect of variations on these processes. The systems studied ranged from aqueous acidic and basic quantum dots of differing

  20. Influence of the electron-phonon interaction on the temperature dependence of the phonon mode frequency in the II-VI compound solid solutions

    SciTech Connect

    Woźny, M. Cebulski, J.; Sheregii, E. M.; Marcelli, A.; Piccinini, M.

    2015-01-14

    We present an experimental investigation of the temperature dependence of the TO-phonon mode frequencies for the HgTe-based II-VI semiconductor solid solutions. In the case of the ternary Hg{sub 0.9}Zn{sub 0.1}Te solid solution was shown a discontinuity in the temperature dependence of the HgTe-like T{sub 0}-mode and of the ZnTe-like T{sub 1}-mode, similar to the Hg{sub 0.85}Cd{sub 0.15}Te system [Sheregii et al., Phys. Rev. Lett. 102, 045504 (2009)]. A generalization of the theoretical temperature shift of the phonon mode frequency as analytic equation is derived that includes both the anharmonic contribution and the electron-phonon e-p interaction which in this case is returnable—the electron subsystem effect on the phonon one. Data show that our equation satisfactorily describes the temperature shift of both Hg{sub 0.85}Cd{sub 0.15}Te and Hg{sub 0.90}Zn{sub 0.10}Te containing Dirac point (E{sub g} ≡ Γ{sub 6} – Γ{sub 8} = 0) although one of the two constants describing the anharmonic shift of the HgTe-like mode should be positive what is abnormal too. In the case of the Hg{sub 0.80}Cd{sub 0.20}Te and Hg{sub 0.763}Zn{sub 0.237}Te solid solution, the role of the returnable e-p contribution is negligible but a positive temperature shift for the HgTe-like modes occurs. This result does not allow to explain the positive temperature shift of these modes merely by the contribution of the (e-p) interaction. Indeed, the relativistic contribution to the chemical bonds induces an abnormal temperature shift of the electron states in Hg-based semiconductors—the effect is expected since the Hg d spin-orbit split contribution to chemical bonds may lead to an abnormal temperature shift of the HgTe-like modes.

  1. Rapid and simple determination of polyphyllin I, II, VI, and VII in different harvest times of cultivated Paris polyphylla Smith var. yunnanensis (Franch.) Hand.-Mazz by UPLC-MS/MS and FT-IR.

    PubMed

    Wu, Zhe; Zhang, Ji; Xu, Furong; Wang, Yuanzhong; Zhang, Jinyu

    2017-01-01

    Paris Polyphylla Smith var. yunnanensis (Franch.) Hand.-Mazz ("Dian Chonglou" in Chinese) is a famous herbal medicine in China, which is usually well known for activities of anti-cancer, hemolysis, and cytotoxicity. In this study, Fourier transform infrared (FT-IR) spectroscopy coupled with principal component analysis (PCA) and partial least-squares regression (PLSR) was applied to discriminate samples of P. polyphylla var. yunnanensis harvested in different years and determine the content of polyphyllin I, II, VI, and VII in P. polyphylla var. yunnanensis. Meanwhile, ultra performance liquid chromatography-tandem mass spectrometry (UPLC-MS/MS) was used to study the dynamic changes of P. polyphylla var. yunnanensis harvested in different years (4, 5, 7, 8, 9, 12, and 13 years old). According to the UPLC-MS/MS result, the optimum harvest time of P. polyphylla var. yunnanensis is 8 years, due to the highest yield of four active components. By the PCA model, P. polyphylla var. yunnanensis could be exactly discriminated, except that two 8-year-old samples were misclassified as 9-year-old samples. For the prediction of polyphyllin I, II, VI, and VII, the quantitative results are satisfactory, with a high value for the determination coefficient (R (2)) and low values for the root-mean-square error of estimation (RMSEE), root-mean-square error of cross-validation (RMSECV), and root-mean-square error of prediction (RMSEP). In conclusion, FT-IR combined with chemometrics is a promising method to accurately discriminate samples of P. polyphylla var. yunnanensis harvested in different years and determine the content of polyphyllin I, II, VI, and VII in P. polyphylla var. yunnanensis.

  2. Lateral topological crystalline insulator heterostructure

    NASA Astrophysics Data System (ADS)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  3. Oxides Heterostructures for Nanoelectronics

    SciTech Connect

    C Dubourdieu; I Gelard; O Salicio; G Saint-Girons; B Vilquin; G Hollinger

    2011-12-31

    We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO{sub 3} on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and La{sub 0.8}MnO{sub 3-{delta}} as well as multiferroic hexagonal ReMnO{sub 3} manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO{sub 3} on Si is considered. Issues and control of the SrTiO{sub 3}/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO{sub 3} on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO{sub 3} or La{sub 0.7}Sr0.3MnO{sub 3}. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si wafers opens up the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds such as InP on Si using epitaxial SrTiO{sub 3} buffer layers for the future integration of optics on Si.

  4. General Considerations of the Electrostatic Boundary Conditions in Oxide Heterostructures

    SciTech Connect

    Higuchi, Takuya

    2011-08-19

    When the size of materials is comparable to the characteristic length scale of their physical properties, novel functionalities can emerge. For semiconductors, this is exemplified by the 'superlattice' concept of Esaki and Tsu, where the width of the repeated stacking of different semiconductors is comparable to the 'size' of the electrons, resulting in novel confined states now routinely used in opto-electronics. For metals, a good example is magnetic/non-magnetic multilayer films that are thinner than the spin-scattering length, from which giant magnetoresistance (GMR) emerged, used in the read heads of hard disk drives. For transition metal oxides, a similar research program is currently underway, broadly motivated by the vast array of physical properties that they host. This long-standing notion has been recently invigorated by the development of atomic-scale growth and probe techniques, which enables the study of complex oxide heterostructures approaching the precision idealized in Fig. 1(a). Taking the subset of oxides derived from the perovskite crystal structure, the close lattice match across many transition metal oxides presents the opportunity, in principle, to develop a 'universal' heteroepitaxial materials system. Hand-in-hand with the continual improvements in materials control, an increasingly relevant challenge is to understand the consequences of the electrostatic boundary conditions which arise in these structures. The essence of this issue can be seen in Fig. 1(b), where the charge sequence of the sublayer 'stacks' for various representative perovskites is shown in the ionic limit, in the (001) direction. To truly 'universally' incorporate different properties using different materials components, be it magnetism, ferroelectricity, superconductivity, etc., it is necessary to access and join different charge sequences, labelled here in analogy to the designations 'group IV, III-V, II-VI' for semiconductors. As we will review, interfaces between

  5. Highly insulating ferromagnetic cobaltite heterostructures

    DOE PAGES

    Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen; ...

    2017-04-02

    Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO3 and the antiferromagnetic brownmillerite SrCoO2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstruction at themore » oxide surface/interfaces and crystalline quality of the constituent layers.« less

  6. Electronic properties of quasiperiodic heterostructures

    NASA Astrophysics Data System (ADS)

    Zárate, J. E.; Velasco, V. R.

    2002-01-01

    We study the electronic states of different GaAs-AlAs Fibonacci, Thue-Morse and Rudin-Shapiro quasiperiodic heterostructures grown along the [001] direction. We employ an empirical tight-binding Hamiltonian including spin-orbit coupling together with the surface Green-function matching method. We present results for different generations of the quasiperiodic heterostructures, formed by different building blocks. We compare these results with those of the constituent quantum wells and with those of heterostructures containing the same total number of GaAs and AlAs slabs after periodic repetition of the building blocks. The states in the energy regions near the conduction- and valence-band edges of GaAs do not exhibit any spectrum fragmentation. They show a strong localization of the local density of states in the GaAs layers, and they can be traced to the states of the isolated quantum wells.

  7. Theory of ferromagnetism in diluted magnetic semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Lee, Byounghak

    In this thesis, we explore the magnetic and transport properties of ferromagnetic semiconductors and their heterostructures. First, we introduce diluted magnetic semiconductors and their properties. The unique features of diluted magnetic semiconductors are originated from their position in the parameter space. We compare diluted magnetic semiconductors with similar physical systems and discuss the difference between them. Next, we briefly review the background theories, such as k · p methods, density functional methods, and envelope function methods. These methods serve as the background on which our theory is based. Third, we develop a mean-field theory in the framework of the self-consistent field method. Our approach improves the RKKY model, allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperatures, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a MnxGa 1-xAs/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties. Fourth, we present a mean-field theory of ferromagnetism in diluted magnetic semiconductor quantum wells. Ignoring subband mixing due to exchange interactions between quantum well free carriers and magnetic impurities, we obtain an analytic result for the dependence of the critical temperature and the spontaneous magnetization on the distribution of magnetic impurities and on the quantum well width. Fifth, we predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. We analyze the interplay between kinetic exchange coupling and quantum confinement effects, and show that magnetization reversal is due to strong exchange-coupling induced subband mixing. Finally, we apply the mean

  8. Assembly of quasicrystalline photonic heterostructures

    DOEpatents

    Grier, David G [New York, NY; Roichman, Yael [New York, NY; Man, Weining [Princeton, NJ; Chaikin, Paul Michael [Pennington, NJ; Steinhardt, Paul Joseph [Princeton, NJ

    2011-07-19

    A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

  9. Assembly of quasicrystalline photonic heterostructures

    DOEpatents

    Grier, David G.; Roichman, Yael; Man, Weining; Chaikin, Paul Michael; Steinhardt, Paul Joseph

    2013-03-12

    A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

  10. Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(0 0 1) substrate

    NASA Astrophysics Data System (ADS)

    Myronov, Maksym; Morrison, Christopher; Halpin, John; Rhead, Stephen; Foronda, Jamie; Leadley, David

    2015-08-01

    Carrier mobility is one of the most important parameters of any semiconductor material, determining its suitability for applications in a large variety of electronic devices including field effect transistors (FETs). Today the capabilities of modern planar Si FET devices are almost exhausted and researchers are seeking either new device architectures or new materials. Here we report an extremely high room temperature (at 293 K) 2D hole gas (2DHG) drift mobility of 4500 cm2 V-1 s-1 at a carrier density of 1.2 × 1011 cm-2 obtained in a compressively strained Ge quantum well (QW) heterostructure, grown by an industrial type chemical vapor deposition system on a standard Si(0 0 1) substrate. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777,000 cm2 V-1 s-1 and 1.9 × 1011 cm-2, respectively. These hole mobilities are the highest not only among the group-IV Si and Ge based semiconductors, but also among p-type III-V and II-VI materials. The obtained room temperature mobility is substantially higher than those reported so far in strained Ge QW heterostructures and reveals a huge potential for further applications of this material in a wide variety of electronic devices.

  11. Interlayer Hybridization in van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Le, Nam; Tran, Huan; Woods, Lilia

    Van der Waals heterostructures composed of chemically inert dissimilar layers are of great interest for fundamental science and applications. The weak interplanar interactions and orbital overlap are expected to bring modifications to the constituent materials. By using first principles simulations, we investigate the properties of several heterostructures, including graphene/silicene, graphene/MoS2, and silicene/MoS2. The calculations reveal superlattice characteristic points in the Brillouin zone associated with the different stacking patterns. Band structures projected on each of the constituents show hybridization features related to specific orbital overlap for each heterostructure. Phonon dispersion spectra for the considered heterostructures are also investigated.

  12. Epitaxial Halide Perovskite Lateral Double Heterostructure.

    PubMed

    Wang, Yiping; Chen, Zhizhong; Deschler, Felix; Sun, Xin; Lu, Toh-Ming; Wertz, Esther A; Hu, Jia-Mian; Shi, Jian

    2017-03-28

    Epitaxial III-V semiconductor heterostructures are key components in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed and experimentally implemented to produce epitaxial double heterostructures in halide perovskite system. Pristine epitaxial mixed halide perovskites rods and films were synthesized via van der Waals epitaxy by chemical vapor deposition method. At room temperature, photon was applied as a knob to regulate the kinetics of spinodal decomposition and classic coarsening. By this approach, halide perovskite double heterostructures were created carrying epitaxial interfaces and outstanding optical properties. Reduced Fröhlich electron-phonon coupling was discovered in coherent halide double heterostructure, which is hypothetically attributed to the classic phonon confinement effect widely existing in III-V double heterostructures. As a proof-of-concept, our results suggest that halide perovskite-based epitaxial heterostructures may be promising for high-performance and low-cost optoelectronics, electro-optics, and microelectronics. Thus, ultimately, for practical device applications, it may be worthy to pursue these heterostructures via conventional vapor phase epitaxy approaches widely practised in III-V field.

  13. A review on the empirical calculation of the electronic band structure of the valence band of the ideal (001) surface of the III-V and II-VI semiconductor compounds

    NASA Astrophysics Data System (ADS)

    Olguín, D.; Baquero, R.; de Coss, R.

    2012-02-01

    In our previous work we have discussed the valence band electronic band structure of a (001) oriented surface (semi-infinite medium) of some II-VI and III-V zinc-blende semiconductor compounds. For these systems, we have found three characteristic surface resonances, besides the known bulk bands (hh, lh and spin-orbit bands). Two of these resonances correspond to the anion terminated surface and the third one to the cation terminated one. We have shown, specifically, that three non dispersive (001)-surface induced bulk states, in the Γ-X direction of the 2D Brillouin zone, do exist and are characteristic of these systems. The existence of these states has been confirmed, independently, by different experimental groups. In this work, we briefly review the main characteristics of the electronic structure of the (001)-surfaces to up-date their analysis. We found that, in general, the nondispersive states occur in several, if not all, crystal surfaces, and, on general grounds, as the consequence of introducing to an infinite medium a frontier of any kind (not only the vacuum). For that reason we propose here, to name them, more appropriately as Frontier Induced Semi-Infinite Medium (FISIM) states.

  14. OPENING ADDRESS: Heterostructures in Semiconductors

    NASA Astrophysics Data System (ADS)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  15. Transferable tight binding model for strained group IV and III-V heterostructures

    NASA Astrophysics Data System (ADS)

    Tan, Yaohua; Povolotskyi, Micheal; Kubis, Tillmann; Boykin, Timothy; Klimeck, Gerhard

    Modern semiconductor devices have reached critical device dimensions in the range of several nanometers. For reliable prediction of device performance, it is critical to have a numerical efficient model that are transferable to material interfaces. In this work, we present an empirical tight binding (ETB) model with transferable parameters for strained IV and III-V group semiconductors. The ETB model is numerically highly efficient as it make use of an orthogonal sp3d5s* basis set with nearest neighbor inter-atomic interactions. The ETB parameters are generated from HSE06 hybrid functional calculations. Band structures of strained group IV and III-V materials by ETB model are in good agreement with corresponding HSE06 calculations. Furthermore, the ETB model is applied to strained superlattices which consist of group IV and III-V elements. The ETB model turns out to be transferable to nano-scale hetero-structure. The ETB band structures agree with the corresponding HSE06 results in the whole Brillouin zone. The ETB band gaps of superlattices with common cations or common anions have discrepancies within 0.05eV.

  16. Electronic Transport in Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    Young, Andrea F.; Kim, Philip

    2011-03-01

    The elementary excitations of monolayer graphene, which behave as massless Dirac particles, make it a fascinating venue in which to study relativistic quantum phenomena. One notable example is Klein tunneling, a phenomena in which electrons convert to holes to tunnel through a potential barrier. However, the omnipresence of charged impurities in substrate-supported samples keep the overall charge distribution nonuniform, obscuring much of this "Dirac" point physics in large samples. Using local gates, one can create tunable heterojunctions in graphene, isolating the contribution of small regions of the samples to transport. In this review, we give an overview of quantum transport theory and experiment on locally gated graphene heterostructures, with an emphasis on bipolar junctions.

  17. Colloidal nanorod heterostructures for photovoltaics and optoelectronics

    NASA Astrophysics Data System (ADS)

    Shim, Moonsub

    2017-05-01

    Colloidal quantum dots (QDs) synthesized in versatile, easy-to-process solutions are opening up exciting prospects in multiple areas, especially in biomedical imaging, photovoltaics, solid-state lighting and displays. The success of most of these prospects relies on high-quality heterostructures that improve optical properties. In particular, the core/shell heterostructure with a type I straddling band offset has been indispensable but the applicability is often limited to those exploiting only photoluminescence. QDs and their heterostructures can also be made with anisotropic shapes that allow access to essentially an unlimited number of combinations of size, shape and composition. Structures that allow enhancement of optical properties and physical accessibility for carrier injection/extraction simultaneously can open up new and exciting prospects in photovoltaics and optoelectronics. This topical review focuses on nanorod-based colloidal semiconductor heterostructures. Two-component, type II staggered band offset nanorod heterostructures capable of efficiently separating photoinduced charges are first discussed. Double heterojunction nanorods that contain three different phases are then considered with respect to their novelty and potential as emissive materials in light-emitting diodes. We conclude with an outlook on the possibility of developing colloidal nanorods that contain epitaxial interfaces beyond the conventional semiconductor heterojunctions.

  18. Synthesis of Colloidal Nanocrystal Heterostructures for High-Efficiency Light Emission

    NASA Astrophysics Data System (ADS)

    Lu, Yifei

    Group II-VI semiconductor nanocrystals, particularly those based on ZnCdS(Se), can be synthesized using well established chemical colloidal processes, and have been a subject of extensive research over the past decade. Their optical properties can be easily tuned through size and composition variations, making them very attractive for many optoelectronic applications including light-emitting diodes (LEDs) and solar cells. Incorporation of diverse internal heterostructures provides an additional means for tuning the optical and electronic properties of conventional ZnCdS(Se) nanocrystals. Extensive bandgap and strain engineering may be applied to the resultant nanocrystal heterostructures to achieve desirable properties and enhanced performance. Despite the high scientific and practical interests of this unique class of nanomaterials, limited efforts have been made to explore their synthesis and potential device applications. This thesis focuses on the synthesis, engineering, characterization, and device demonstration of two types of CdSe-based nanocrystal heterostructures: core/multishell quantum dots (QDs) and QD quantum wells (QDQWs). Their optical properties have been tuned by bandgap and strain engineering to achieve efficient photoluminescence (PL) and electroluminescence (EL).Firstly, yellow light-emitting CdSe QDs with a strain-compensated ZnS/ZnCdS bilayer shell were synthesized using the successive ion layer adsorption and reaction technique and the effects of the shell on the luminescent properties were investigated. The core/shell/shell QDs enjoyed the benefits of excellent exciton confinement by the ZnS intermediate shell and strain compensation by the ZnCdS outer shell, and exhibited 40% stronger PL and a smaller peak redshift upon shell growth compared to conventional CdSe/ZnCdS/ZnS core/shell/shell QDs with an intermediate lattice adaptor. CdSe/ZnS/ZnCdS QD-LEDs had a luminance of 558 cd/m2 at 20 mA/cm 2, 28% higher than that of CdSe/ZnCdS/ZnS QD

  19. Spin Transport in Semiconductor heterostructures

    SciTech Connect

    Domnita Catalina Marinescu

    2011-02-22

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  20. Multilayer heterostructures and their manufacture

    SciTech Connect

    Hammond, Scott R; Reese, Matthew; Rupert, Benjamin; Miedaner, Alexander; Curtis, Clavin; Olson, Dana; Ginley, David S

    2015-11-04

    A method of synthesizing multilayer heterostructures including an inorganic oxide layer residing on a solid substrate is described. Exemplary embodiments include producing an inorganic oxide layer on a solid substrate by a liquid coating process under relatively mild conditions. The relatively mild conditions include temperatures below 225.degree. C. and pressures above 9.4 mb. In an exemplary embodiment, a solution of diethyl aluminum ethoxide in anhydrous diglyme is applied to a flexible solid substrate by slot-die coating at ambient atmospheric pressure, and the diglyme removed by evaporation. An AlO.sub.x layer is formed by subjecting material remaining on the solid substrate to a relatively mild oven temperature of approximately 150.degree. C. The resulting AlO.sub.x layer exhibits relatively high light transmittance and relatively low vapor transmission rates for water. An exemplary embodiment of a flexible solid substrate is polyethylene napthalate (PEN). The PEN is not substantially adversely affected by exposure to 150.degree. C

  1. Wafer bonded epitaxial templates for silicon heterostructures

    DOEpatents

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  2. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  3. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    SciTech Connect

    Fafard, S. E-mail: simon.fafard@azastra.com; Proulx, F.; York, M. C. A.; Arès, R.; Aimez, V.; Valdivia, C. E.; Wilkins, M. M.; Hinzer, K.; Masson, D. P.

    2016-02-15

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ∼1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  4. Two-dimensional heterostructures for energy storage

    NASA Astrophysics Data System (ADS)

    Pomerantseva, Ekaterina; Gogotsi, Yury

    2017-07-01

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. We also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

  5. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    NASA Astrophysics Data System (ADS)

    Fafard, S.; York, M. C. A.; Proulx, F.; Valdivia, C. E.; Wilkins, M. M.; Arès, R.; Aimez, V.; Hinzer, K.; Masson, D. P.

    2016-02-01

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ˜1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  6. Devices and applications of van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Chao; Zhou, Peng; Zhang, David Wei

    2017-03-01

    Van der Waals heterostructures, composed of individual two-dimensional material have been developing extremely fast. Synthesis of van der Waals heterostructures without the constraint of lattice matching and processing compatibility provides an ideal platform for fundamental research and new device exploitation. We review the approach of synthesis of van der Waals heterostructures, discuss the property of heterostructures and thoroughly illustrate the functional van der Waals heterostructures used in novel electronic and photoelectronic device. Project supported by the National Key Research and Development Program (No. 2016YFA0203900) and the National Natural Science Foundation of China (Nos. 61376093, 61622401).

  7. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

    1995-01-01

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

  8. Complementary junction heterostructure field-effect transistor

    DOEpatents

    Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

    1995-12-26

    A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

  9. Interface magnetism in complex oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Srikanth, Hariharan

    2008-03-01

    Magnetic oxides are an important class of materials from the perspectives of fundamental physics and technological applications. Advances in growth of high quality thin films and epitaxial oxide heterostructures over the years, have led to the realization of ideal condensed matter systems in which the complex and rich physics associated with cooperative phenomena can be explored. Examples of coupled phenomena in heterostructures include exchange bias effects, magnetoelectric coupling and interplay between magnetism and superconductivity. In this talk, I will focus on three classes of oxide heterostructures --PLD-grown M-type barium hexaferrite(BaM)/barium strontium titanate(BST), CVD-grown CrO2/Cr2O3 bilayers and high-pressure sputtered LCMO/YBCO films. The common theme is the magnetic coupling across the interfaces. I will demonstrate that dynamic susceptibility and kinetic inductance experiments using a sensitive tunnel-diode oscillator (TDO) are effective probes of such coupled effects. In the case of CrO2/Cr2O3 and LCMO/YBCO, the interface coupling results in anomalous anisotropy, exchange bias in the former and complex interaction between the LCMO magnetism and YBCO vortex lattice in the latter. In BaM/BST heterostructures, I will discuss how interfacial coupling influences the microwave response that is both electrically and magnetically tunable.

  10. Design and discovery of heterostructural alloys

    NASA Astrophysics Data System (ADS)

    Holder, Aaron; Siol, Sebastian; Ndione, Paul; Peng, Haowei; Zakutayev, Andriy; Lany, Stephan; Matthews, Bethany; Tate, Janet; Gorman, Brian; Gordon, Roy; Schelhas, Laura; Toney, Mike

    The tailoring of materials properties by alloying is routinely utilized to design materials for targeted technological applications. Despite the great successes of alloying in isostructural systems, heterostructural alloying remains a fundamentally unexplored area. In heterostructural alloys, the crossover between different crystal structures enables a new parameter for control over structure and properties by variation of the composition. Here, we present a complementary theoretical and experimental investigation of novel semiconducting metal chalcogenide alloys to develop design principles and approaches for utilizing heterostructural alloying as a materials design strategy. We use ab initio methods to predict the structural and electronic properties of novel alloys with commensurate and incommensurate lattice symmetries. Non-equilibrium deposition methods are employed to overcome thermodynamic solubility limits and produce metastable thin-film samples across the entire alloy composition range. The prediction, theory-guided combinatorial synthesis, and characterization of heterostructural alloys demonstrate the design and discovery of functional metastable materials. Our approach establishes a new route for the control of structure-property and composition-structure relationships by accessing non-equilibrium phase space to develop new materials with uniquely tailored properties.

  11. Single heterostructure lasers: a UK perspective

    NASA Astrophysics Data System (ADS)

    Selway, Peter

    2012-09-01

    The gallium-aluminium-arsenide single heterostructure laser was the first commercially successful semiconductor laser produced in the UK. This paper presents a personal perspective on the events leading up to volume production and highlights the fascinating physics involved in this device and the impact of this on the task of engineering a robust component which was eventually manufactured for over 20 years.

  12. Investigation of Quantum Effects in Heterostructures

    DTIC Science & Technology

    1993-08-20

    Mendez and C. Tejedor (Plenum, New York, 1991), p. 1. "* Resonant Magnetotunneling in Type-Il Heterostructures, in Resonant Tunneling in Semiconductors...Physics and Applications, ed. by L. L. Chang, E. E. Mendez and C. Tejedor (Plenum, New York, 1991), p. 51. "* The Evolution of Semiconductor Quantum

  13. Heterostructures based on inorganic and organic van der Waals systems

    NASA Astrophysics Data System (ADS)

    Lee, Gwan-Hyoung; Lee, Chul-Ho; van der Zande, Arend M.; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F.; Hone, James; Kim, Philip

    2014-09-01

    The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

  14. Properties of ferroelectric/ferromagnetic thin film heterostructures

    SciTech Connect

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew; Nie, Yan

    2014-05-07

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  15. Design of lateral heterostructure from arsenene and antimonene

    NASA Astrophysics Data System (ADS)

    Sun, Qilong; Dai, Ying; Ma, Yandong; Yin, Na; Wei, Wei; Yu, Lin; Huang, Baibiao

    2016-09-01

    Lateral heterostructures fabricated by two-dimensional building blocks have opened up exciting realms in material science and device physics. Identifying suitable materials for creating such heterostructures is urgently needed for the next-generation devices. Here, we demonstrate a novel type of seamless lateral heterostructures with excellent stabilities formed within pristine arsenene and antimonene. We find that these heterostructures could possess direct and reduced energy gaps without any modulations. Moreover, the highly coveted type-II alignment and the high carrier mobility are also identified, marking the enhanced quantum efficiency. The tensile strain can result in efficient bandgap engineering. Besides, the proposed critical condition for favored direct energy gaps would have a guiding significance on the subsequent works. Generally, our predictions not only introduce new vitality into lateral heterostructures, enriching available candidate materials in this field, but also highlight the potential of these lateral heterostructures as appealing materials for future devices.

  16. Properties of ferroelectric/ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Nie, Yan; Celinski, Zbigniew

    2014-05-01

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi2Ta2O9/BaFe12O19 (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  17. A review of nano-optics in metamaterial hybrid heterostructures

    SciTech Connect

    Singh, Mahi R.

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  18. Pulsed terahertz emission from GaN/InN heterostructure

    NASA Astrophysics Data System (ADS)

    Reklaitis, Antanas

    2011-11-01

    Dynamics of the electron-hole plasma excited by the femtosecond optical pulse in wurtzite GaN/InN heterostructure is investigated by Monte Carlo simulations. The GaN/InN heterostructure for pulsed terahertz emission is suggested. The results of Monte Carlo simulations show that the power of terahertz emission from the GaN/InN heterostructure exceeds the power of terahertz emission from the surface of InN by one order of magnitude.

  19. Photonic crystal heterostructures from self-assembled opals

    NASA Astrophysics Data System (ADS)

    Khokhar, Ali Z.; Rahman, Faiz; Johnson, Nigel P.

    2011-02-01

    This paper describes the fabrication of opal-based photonic crystal heterostructures. These heterostructures were created by using multilayer deposition of silica and polystyrene spheres. The fabricated structures involved both different lattice constants and different dielectric constants. Single and double heterostructures working in the visible region were fabricated by using techniques described here. The optical properties of these heterostructures were investigated experimentally and showed the superposition of the properties of each individual crystal region as well as optical signatures due to inter-layer defects.

  20. Electron mobility in modulation-doped heterostructures

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Ruda, H. E.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

  1. Oxide heterostructures for efficient solar cells.

    PubMed

    Assmann, Elias; Blaha, Peter; Laskowski, Robert; Held, Karsten; Okamoto, Satoshi; Sangiovanni, Giorgio

    2013-02-15

    We propose an unexplored class of absorbing materials for high-efficiency solar cells: heterostructures of transition-metal oxides. In particular, LaVO(3) grown on SrTiO(3) has a direct band gap ∼1.1  eV in the optimal range as well as an internal potential gradient, which can greatly help to separate the photogenerated electron-hole pairs. Furthermore, oxide heterostructures afford the flexibility to combine LaVO(3) with other materials such as LaFeO(3) in order to achieve even higher efficiencies with band-gap graded solar cells. We use density-functional theory to demonstrate these features.

  2. Electron mobility in modulation-doped heterostructures

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Ruda, H. E.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

  3. Low energy consumption spintronics using multiferroic heterostructures.

    PubMed

    Trassin, Morgan

    2016-01-27

    We review the recent progress in the field of multiferroic magnetoelectric heterostructures. The lack of single phase multiferroic candidates exhibiting simultaneously strong and coupled magnetic and ferroelectric orders led to an increased effort into the development of artificial multiferroic heterostructures in which these orders are combined by assembling different materials. The magnetoelectric coupling emerging from the created interface between the ferroelectric and ferromagnetic layers can result in electrically tunable magnetic transition temperature, magnetic anisotropy or magnetization reversal. The full potential of low energy consumption magnetic based devices for spintronics lies in our understanding of the magnetoelectric coupling at the scale of the ferroic domains. Although the thin film synthesis progresses resulted into the complete control of ferroic domain ordering using epitaxial strain, the local observation of magnetoelectric coupling remains challenging. The ability to imprint ferroelectric domains into ferromagnets and to manipulate those solely using electric fields suggests new technological advances for spintronics such as magnetoelectric memories or memristors.

  4. Superconducting cuprate heterostructures for hot electron bolometers

    SciTech Connect

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-25

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La{sub 2−x}Sr{sub x}CuO{sub 4} layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI{sup 3}, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g{sub e−ph}≈1 W/K cm{sup 2} at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  5. Designing heterostructures -- a route towards new superconductors

    NASA Astrophysics Data System (ADS)

    Kopp, Thilo

    2013-03-01

    By now it has become technologically feasible to grow controllably transition metal oxides layer by layer. In effect, the achieved progress allows to design heterostructures with optimized electronic properties. The talk will specifically address scenarios for interface superconductivity and the possibility to raise the transition temperature of bulk superconductors by layer design. Heterostructures offer a complexity beyond that of bulk materials. The nature of the superconducting states formed in layered materials and at interfaces is a fascinating topic of recent research which will be in the focus of this presentation. This work was supported by the DFG (TRR 80). I thankfully acknowledge the collaboration with Natalia Pavlenko, Peter Hirschfeld, Cyril Stephanos, Florian Loder, Arno Kampf, and Jochen Mannhart.

  6. Thermal response in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Naidu Gandi, Appala; Alshareef, Husam N.; Schwingenschlögl, Udo

    2017-01-01

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation.

  7. Thermal response in van der Waals heterostructures.

    PubMed

    Gandi, Appala Naidu; Alshareef, Husam N; Schwingenschlögl, Udo

    2017-01-25

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation.

  8. Superconducting cuprate heterostructures for hot electron bolometers

    NASA Astrophysics Data System (ADS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  9. Anomalous spontaneous reversal in magnetic heterostructures.

    PubMed

    Li, Zhi-Pan; Eisenmenger, Johannes; Miller, Casey W; Schuller, Ivan K

    2006-04-07

    We observe a thermally induced spontaneous magnetization reversal of epitaxial ferromagnet/antiferromagnet heterostructures under a constant applied magnetic field. Unlike any other magnetic system, the magnetization spontaneously reverses, aligning antiparallel to an applied field with decreasing temperature. We show that this unusual phenomenon is caused by the interfacial antiferromagnetic coupling overcoming the Zeeman energy of the ferromagnet. A significant temperature hysteresis exists, whose height and width can be tuned by the field applied during thermal cycling. The hysteresis originates from the intrinsic magnetic anisotropy in the system. The observation of this phenomenon leads to open questions in the general understanding of magnetic heterostructures. Moreover, this shows that in general heterogeneous nanostructured materials may exhibit unexpected phenomena absent in the bulk.

  10. Resonant pairing of excitons in semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Andreev, S. V.

    2016-10-01

    We suggest indirect excitons in two-dimensional semiconductor heterostructures as a platform for the realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a biexcitonic gapped state can be controlled in situ by tuning the electric field applied to the structure in the growth direction. The proposed playground should allow one to go to strongly correlated and high-temperature regimes, unattainable with Feshbach resonant atomic gases.

  11. Intersubband Light Emission Type II Heterostructures

    DTIC Science & Technology

    2003-10-31

    road to practical heterostructure-based spin devices, one of the first steps has been to establish the presence of Rashba splitting and to determine...its amount, and, if possible, to control it. This effect refers to the splitting and uneven population of the two spin subbands in the conduction... spin splitting . To this effect, we have done a systematic magnetotunneling study using a variety of InAs- AlSb-GaSb-AlSb-InAs structures with

  12. Magnetoelectric Heterostructures for Spintronics and Magnetic Sensing

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang

    Magnetoelectric heterostructures with coupled magnetization and electric polarization across their interfaces enable significantly improvement of performance of many devices such as magnetic sensors, microwave magnetic devices, and spintronics. I will first show that by utilizing a unique ferroelastic polarization switching pathway, one can achieve non-volatile electric-field-switching of magnetism in multiferroic heterostructures with different ferroelectric single crystals through a strain-mediated magnetoelectric coupling. In the same system, with atomically-thin ferromagnets, the interfacial charge-mediated should also be taken into account. The charge- and strain-mediated coupling mechanisms are demonstrated and precisely quantified by the electric-field-tuning of ferromagnetic resonance. With the same technique, magnetic relaxation including intrinsic and extrinsic damping has also been shown to be strongly correlated to the strain, which is attributed to the electric-field-modification of spin-orbit coupling. Moreover, I will also show the tuning of spin-orbit torques from the spin-Hall effect with applied voltage probed with spin-torque ferromagnetic resonance and show the possible application on voltage tunable spin-Hall nano-oscillators. In the second part of my thesis, I will show an ultra-miniaturized magnetoelectric nano-electromechanical system (NEMS) resonator based on an AlN/FeGaB magnetoelectric heterostructure for detecting wide band magnetic fields. With the high Quality factor and the ultra-high resonance frequency, a low DC magnetic field detection limit of 300 pT has been demonstrated.

  13. Functional ferroic heterostructures with tunable integral symmetry.

    PubMed

    Becher, C; Trassin, M; Lilienblum, M; Nelson, C T; Suresha, S J; Yi, D; Yu, P; Ramesh, R; Fiebig, M; Meier, D

    2014-07-02

    The relation between symmetry and functionality was pinpointed by Pierre Curie who stated that it is the symmetry breaking that creates physical properties. This fundamental principle is nowadays used for engineering heterostructures whose integral symmetry leads to exotic phenomena such as one-way transparency. For switching devices, however, such symmetry-related functionalities cannot be used because the symmetry in conventional heterostructures is immutable once the material has been synthesized. Here we demonstrate a concept for post-growth symmetry control in PbZr0.2Ti0.8O3 and BiFeO3-based heterostructures. A conducting oxide is sandwiched between two ferroelectric layers, and inversion symmetry is reversibly switched on or off by layer-selective electric-field poling. The generalization of our approach to other materials and symmetries is discussed. We thus establish ferroic trilayer structures as device components with reversibly tunable symmetry and demonstrate their use as light emitters that can be activated and deactivated by applying moderate electric voltages.

  14. Functional ferroic heterostructures with tunable integral symmetry

    NASA Astrophysics Data System (ADS)

    Becher, C.; Trassin, M.; Lilienblum, M.; Nelson, C. T.; Suresha, S. J.; Yi, D.; Yu, P.; Ramesh, R.; Fiebig, M.; Meier, D.

    2014-07-01

    The relation between symmetry and functionality was pinpointed by Pierre Curie who stated that it is the symmetry breaking that creates physical properties. This fundamental principle is nowadays used for engineering heterostructures whose integral symmetry leads to exotic phenomena such as one-way transparency. For switching devices, however, such symmetry-related functionalities cannot be used because the symmetry in conventional heterostructures is immutable once the material has been synthesized. Here we demonstrate a concept for post-growth symmetry control in PbZr0.2Ti0.8O3 and BiFeO3-based heterostructures. A conducting oxide is sandwiched between two ferroelectric layers, and inversion symmetry is reversibly switched on or off by layer-selective electric-field poling. The generalization of our approach to other materials and symmetries is discussed. We thus establish ferroic trilayer structures as device components with reversibly tunable symmetry and demonstrate their use as light emitters that can be activated and deactivated by applying moderate electric voltages.

  15. Voltage control of magnetism in multiferroic heterostructures.

    PubMed

    Liu, Ming; Sun, Nian X

    2014-02-28

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

  16. Graphene diamond-like carbon films heterostructure

    SciTech Connect

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  17. Voltage control of magnetism in multiferroic heterostructures

    PubMed Central

    Liu, Ming; Sun, Nian X.

    2014-01-01

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories. PMID:24421373

  18. Two-dimensional heterostructures for energy storage

    DOE PAGES

    Pomerantseva, Ekaterina; Gogotsi, Yury

    2017-06-12

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associatedmore » shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. As a result, we also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.« less

  19. Molecular beam epitaxial re-growth of CdTe, CdTe/CdMgTe and CdTe/CdZnTe double heterostructures on CdTe/InSb(1 0 0) substrates with As cap

    NASA Astrophysics Data System (ADS)

    Seyedmohammadi, Shahram; DiNezza, Michael J.; Liu, Shi; King, Paul; LeBlanc, Elizabeth G.; Zhao, Xin-Hao; Campbell, Calli; Myers, Thomas H.; Zhang, Yong-Hong; Malik, Roger J.

    2015-09-01

    Molecular beam epitaxial growth on CdTe substrates is challenging since the CdTe film crystalline and optical quality is limited by residual defects including threading dislocations and stacking faults. This remains an obstacle in spite of exhausting variables including pre-growth substrate preparation as well as epitaxial growth conditions including thermal oxide desorption, growth temperature, and II/VI flux ratios. We propose a new technique to re-grow structures with low defect densities and high optical and structural quality on InSb substrates. The "CdTe virtual wafer" is made by growing a thin CdTe film on an InSb(1 0 0) substrate which is then covered with a thin As cap layer to prevent oxidation of the CdTe surface. The As cap can be removed by thermal desorption at about 300 C leaving a clean CdTe surface for subsequent epitaxial growth. This method eliminates the need for chemical etching of CdTe substrates which has been found to lead to an atomically rough surface with residual Carbon and Oxygen contamination. XRD and SEM characterization show a smooth transition from the buffer CdTe to re-grown CdTe layer with identical crystalline quality as for virtual wafer. Steady-state PL and time-resolved PL from CdTe/CdMgTe double heterostructures show substantial improvement in luminescence intensity and carrier lifetime comparable to values for identical samples grown without exposure to atmosphere. We will also report on CdTe/CdZnTe double heterostructures grown on virtual wafers compared to identical structures on conventional CdTe(2 1 1)B substrates.

  20. Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

    NASA Astrophysics Data System (ADS)

    Datta, Kanak; Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

    2017-02-01

    Two dimensional materials such as transition metal dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS2/MX2/MoS2; M = Mo or, W and X = S or, Se) metal oxide semiconductor field effect transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device `on' current can be improved by inserting a WS2 monolayer between two MoS2 monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate field effect transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS2/WS2/MoS2 FET shows the least sensitivity among them.

  1. van der Waals Heterostructures Grown by MBE

    NASA Astrophysics Data System (ADS)

    Hinkle, Christopher

    In this work, we demonstrate the high-quality MBE heterostructure growth of various layered 2D materials by van der Waals epitaxy (VDWE). The coupling of different types of van der Waals materials including transition metal dichalcogenide thin films (e.g., WSe2, WTe2, HfSe2) , insulating hexagonal boron nitride (h-BN), and topological insulators (e.g., Bi2Se3) allows for the fabrication of novel electronic devices that take advantage of unique quantum confinement and spin-based characteristics. The relaxed lattice-matching criteria of van der Waals epitaxy has allowed for high-quality heterostructure growth with atomically abrupt interfaces, allowing us to couple these materials based primarily on their band alignment and electronic properties. We will discuss the impact of sample preparation, surface reactivity, and lattice mismatch of various substrates (sapphire, graphene, TMDs, Bi2Se3) on the growth mode and quality of the films and will discuss our studies of substrate temperature and flux rates on the resultant growth and grain size. Structural and chemical characterization was conducted via reflection high energy electron diffraction (RHEED, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM/S), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Experimentally determined band alignments have been determined and compared with first-principles calculations allowing the design of novel low-power logic and magnetic memory devices. Initial results from the electrical characterization of these grown thin films and some simple devices will also be presented. These VDWE grown layered 2D materials show significant potential for fabricating novel heterostructures with tunable band alignments and magnetic properties for a variety of nanoelectronic and optoelectronic applications.

  2. Room-temperature semiconductor heterostructure refrigeration

    NASA Astrophysics Data System (ADS)

    Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

    2005-07-01

    With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

  3. Transmission in graphene-topological insulator heterostructures

    NASA Astrophysics Data System (ADS)

    De Beule, C.; Zarenia, M.; Partoens, B.

    2017-03-01

    We investigate scattering of the topological surface state of a three-dimensional time-reversal invariant topological insulator when graphene is deposited on the topological-insulator surface. Specifically, we consider the (111) surface of a Bi2Se3 -like topological insulator. We present a low-energy model for the graphene-topological insulator heterostructure and we calculate the transmission probability at zigzag and armchair edges of the deposited graphene, and the conductance through graphene nanoribbon barriers, and show that its features can be understood from antiresonances in the transmission probability.

  4. Channel drop filters in woodpile-heterostructures

    NASA Astrophysics Data System (ADS)

    Feng, Zhifang; Zhang, Dandan; Yasin Akhtar Raja, M.

    2014-02-01

    Channel drop-filter is essential building blocks of transceivers that are the workhorse of Gbps communication and enable the emerging 100 Gb/s technology. Using finite difference time domain method, heterostructures based channel drop filter in microwave region involving resonant system (in woodpile structure) are designed, analyzed, and simulated. Our simulations using hetero-woodpile-structures show that the resonant modes can be effectively adjusted in various ways, such as only changing the distance of two cavities or changing the lattice constants in the core woodpile. When bus/drop waveguides and resonant systems are located in different layers, we find that there is a resonant band.

  5. Advanced heterostructure transistor technologies for wireless communications

    NASA Astrophysics Data System (ADS)

    Wang, N.-L. Larry; Lin, Barry; Chau, Frank H.-F.; Jackson, Gordon; Chen, Zhengming; Lee, C. P.

    1999-08-01

    Wireless communication has enjoyed tremendous growth in the last five years. Most of the market is below the 3 GHz. Recently, millimeter wave frequency band was also opened up to commercial applications, such as the Local Multipoint Distribution System. The rapid growth of the market demands cost effective RF circuitry with ever better performance. Thus, the heterostructure transistors are pursued to meeting the market needs. This article will first analyze the technical demand on RF transistor circuitry for wireless application. Existing and emerging transistor technologies will be discussed for its strength. A general comparison will be made.

  6. Heterostructures as a quantum optical klistron

    SciTech Connect

    Malov, Yu.A.

    1995-12-31

    THE beam of {open_quotes}hot{close_quotes} ballistic electrons which were first obtained experimentally in (1) is considered when passing through the heterostructures consisting of two potential barriers in barriers in the presence of FEL tuning in infra-red region. In the presence of the first barrier the electron beam in the FEL electromagnetic field can either absorb or emit the field quanta. The initial electron beam may split into states n=1 (absorption of one quantum), n=0 (the beam energy unchanged), and n=-1 (emission of one quantum). The interference of the states with n=0, n=1 and n=0, n=1 results in the initiation of two traveling modulation waves at electromagnetic frequency w. Beats between these waves in the region of the of their overlapping lead to a periodic dependence of the modulation from w. It has been found that the spontaneous coherent radiation (SCR) intensity oscillates with the period depending on FEL frequency w. It is possible to increase or to decrease the spectral intensity of SCR varying w. The suggested idea of modulation on the first barrier of heterostructures and the radiation of modulated electron beam on the second barrier is a scheme of an quantum optical klistron in infra-red region.

  7. Thermoelectric Properties of Complex Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Cain, Tyler Andrew

    Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

  8. Heterostructure design optimization for laser cooling of GaAs

    NASA Astrophysics Data System (ADS)

    Imangholi, B.; Wang, C.; Soto, E.; Sheik-Bahae, M.; Stintz, A.; Malloy, K.; Nuntawong, N.; Epstein, R.

    2007-02-01

    Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result, internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper, the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.

  9. Thermally induced currents in graphene-based heterostructure

    NASA Astrophysics Data System (ADS)

    Zeng, Minggang; Feng, Yuanping; Liang, Gengchiau

    2011-09-01

    We investigate thermally induced currents in a zigzag graphene nanoribbon (ZGNR) heterostructure, consisting of hydrogen-terminated ZGNR (ZGNR-H) and oxygen-terminated ZGNR (ZGNR-O), under different electronic and magnetic states. Compared to a pure ZGNR-H system, the heterostructure displays a considerably larger thermally induced current due to its asymmetric transmission spectrum. Moreover, the magnetized ZGNR-H/ZGNR-O shows spin filter and magnetoresistance effects, suggesting potential applications of the ZGNR-H/ZGNR-O heterostructures in thermoelectric and spintronics devices.

  10. Engineering charge transport by heterostructuring solution-processed semiconductors

    NASA Astrophysics Data System (ADS)

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  11. Device Applications of Spin-Orbit Interaction in Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ting, David Z.-Y.; Cartoixà, Xavier; Chang, Yia-Chung

    2005-03-01

    We report recent progress in theoretical development of two classes of non-magnetic semiconductor heterostructure spin devices that exploit spin-orbit interaction in the presence of structural inversion asymmetry (SIA) or bulk inversion asymmetry (BIA). The first uses resonant tunneling to filter spins, and can be used to create a source of spin polarized current. We will provide an analysis on the origin of spin-dependent tunneling in these structures and discuss their applications. The second exploits the interplay between BIA and SIA to control spin lifetimes for device applications. We show that the D'yakonov-Perel' spin relaxation can be suppressed to first order in k for one out three spin components in [001] and [011] heterostructures, and for all three spin components in [111] heterostructures. Our results suggest the use of [111] heterostructures as preferred channels for spin transport, as active regions in spin-LEDs, for spin lifetime transistor, and for spin storage.

  12. Quantum dot nanoscale heterostructures for solar energy conversion.

    PubMed

    Selinsky, Rachel S; Ding, Qi; Faber, Matthew S; Wright, John C; Jin, Song

    2013-04-07

    Quantum dot nanoscale semiconductor heterostructures (QDHs) are a class of materials potentially useful for integration into solar energy conversion devices. However, realizing the potential of these heterostructured systems requires the ability to identify and synthesize heterostructures with suitably designed materials, controlled size and morphology of each component, and structural control over their shared interface. In this review, we will present the case for the utility and advantages of chemically synthesized QDHs for solar energy conversion, beginning with an overview of various methods of heterostructured material synthesis and a survey of heretofore reported materials systems. The fundamental charge transfer properties of the resulting materials combinations and their basic design principles will be outlined. Finally, we will discuss representative solar photovoltaic and photoelectrochemical devices employing QDHs (including quantum dot sensitized solar cells, or QDSSCs) and examine how QDH synthesis and design impacts their performance.

  13. 2D materials and van der Waals heterostructures.

    PubMed

    Novoselov, K S; Mishchenko, A; Carvalho, A; Castro Neto, A H

    2016-07-29

    The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With these new materials, truly 2D physics has begun to appear (for instance, the absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc.). Novel heterostructure devices--such as tunneling transistors, resonant tunneling diodes, and light-emitting diodes--are also starting to emerge. Composed from individual 2D crystals, such devices use the properties of those materials to create functionalities that are not accessible in other heterostructures. Here we review the properties of novel 2D crystals and examine how their properties are used in new heterostructure devices.

  14. Charge carrier transfer in tungsten disulfide - black phosphorus heterostructures.

    PubMed

    Zhao, Siqi; He, Dawei; Wang, Yongsheng; Zhang, Xinwu; He, Jiaqi

    2017-09-27

    Photocarrier dynamics in tungsten disulfide - black phosphorus heterostructures were studied by time-resolved differential reflection measurements. The heterostructures were fabricated by stacking together monolayer WS2 and black phosphorus flakes that are both fabricated by mechanical exfoliation. Efficient and ultrafast transfer of photocarriers from WS2 to BP flakes was observed. This confirms the type-I band alignment of WS2/BP heterostructures that was predicted by theory. Accompanied with the photocarrier interlayer transfer process from WS2 to BP flakes, the change of the absorption of WS2 persists for several nanoseconds. These results promote the consciousness about the carrier dynamics of interlayer transfer process in van der Waals heterostructures and its application in optoelectronic devices. © 2017 IOP Publishing Ltd.

  15. Ge/Si core/multi shell heterostructure FETs

    SciTech Connect

    Picraux, Samuel T; Dayeh, Shadi A

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  16. Raman Characterization of Graphene and 2D TMD Heterostructures

    NASA Astrophysics Data System (ADS)

    Derby, Benjamin; Hight Walker, Angela

    2015-03-01

    We report efforts to produce and characterize graphene and two-dimensional transition-metal dichalcogenides (TMD) heterostructures. Using PDMS stamps, exfoliation of graphene, MoS2, h-BN, and TaS2 precedes the stacking of these mono- and few layers into heterostructures. The goal is to engineer mis-orientation to enhanced Raman signatures of various layers within the heterostructures. Previous studies have reported a Raman signal strength that is angle dependent between bi-layers. Using resonant Raman spectroscopy, we probe the quality of these constructed heterostructures. Ultimately, we plan to combine our optical measurements with an applied magnetic field to probe the complex magneto-Raman interaction. Previous studies show a magneto-phonon resonance at specific field strengths and laser excitations. Our results to date will be summarized.

  17. Method and apparatus for selectively annealing heterostructures using microwave

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A. (Inventor); Brain, Ruth A. (Inventor); Barmatz, Martin B. (Inventor)

    1998-01-01

    The present invention discloses a process for selectively annealing heterostructures using microwaves. A heterostructure, comprised of a material having higher microwave absorption and a material having lower microwave absorption, is exposed to microwaves in the cavity. The higher microwave absorbing material absorbs the microwaves and selectively heats while the lower microwave absorbing material absorbs small amounts of microwaves and minimally heats. The higher microwave absorbing material is thereby annealed onto the less absorbing material which is thermally isolated.

  18. Method and apparatus for selectively annealing heterostructures using microwaves

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A. (Inventor); Brain, Ruth A. (Inventor); Barmatz, Martin B. (Inventor)

    1998-01-01

    The present invention discloses a process for selectively annealing heterostructures using microwaves. A heterostructure, comprised of a material having higher microwave absorption and a material having lower microwave absorption, is exposed to microwaves in the cavity. The higher microwave absorbing material absorbs the microwaves and selectively heats while the lower microwave absorbing material absorbs small amounts of microwaves and minimally heats. The higher microwave absorbing material is thereby annealed onto the less absorbing material which is thermally isolated.

  19. Interface Superconductivity in Graphite- and CuCl-Based Heterostructures

    DTIC Science & Technology

    2015-01-22

    AFRL-OSR-VA-TR-2015-0062 Interface superconductivity in graphite- and CuCl-based heterostructures Yakov Kopelevich UNIVERSIDADE EEADUAL DE CAMPINAS...TITLE AND SUBTITLE "INTERFACE SUPERCONDUCTIVITY IN GRAPHITE AND CuCl-BASED HETEROSTRUCTURES" 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-13-1-0056 5c...long-standing problem of possible high- temperature superconductivity in CuCl. The obtained experimental evidence indicates that the low resistance

  20. An investigation of dopping profile for a one dimensional heterostructure

    NASA Astrophysics Data System (ADS)

    Huang, Zhaohui

    2005-03-01

    A one-dimensional junction is formed by joining two silicon nanowires whose surfaces are terminated with capping groups of different electronegativity and polarizability. If this heterostructure is doped (with e.g. phosphorous) on the side with the higher bandgap, the system becomes a modulation doped heterostructure with novel one-dimensional electrostatics. We use density functional theory calculations in the pseudopotential approximation, plus empirical model calculations, to investigate doping profiles in this new class of nanostructures.

  1. Electron spin relaxation in zinc-blende heterostructures

    NASA Astrophysics Data System (ADS)

    Golub, L. E.; Averkiev, N. S.; Willander, M.

    2000-12-01

    Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially clearly if the two contributions to the D'yakonov-Perel' spin relaxation mechanism (due to the bulk spin-orbit interaction term and the Rashba term) are comparable in efficiency. Concentration dependences of spin relaxation rates for a heterostructure grown along the [001] direction are plotted for different electron spin orientations.

  2. Vertical heterostructures based on graphene and other 2D materials

    SciTech Connect

    Antonova, I. V.

    2016-01-15

    Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.

  3. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures

    NASA Astrophysics Data System (ADS)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-01

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi /Ag /CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  4. Synthesis of multiple constituent ferecrystal heterostructures

    NASA Astrophysics Data System (ADS)

    Westover, Richard D.

    The ability to form multiple component heterostructures of two-dimensional materials promises to provide access to hybrid materials with tunable properties different from those of the bulk materials or two-dimensional constituents. By taking advantage of the unique properties of different constituents, numerous applications are possible for which none of the individual components are viable. The synthesis of multiple component heterostructures, however, is nontrivial, relying on either the cleaving and stacking of bulk materials in a "scotch tape" type technique or finding coincidentally favorable growth conditions which allow layers to be grown epitaxially on each other in any order. In addition, alloying of miscible materials occurs when the modulation wavelength is small. These synthetic challenges have limited the ability of scientists to fully utilize the potential of multiple component heterostructures. An alternative synthetic route to multiple component heterostructures may be found through expansion of the modulated elemental reactant technique which allows access to metastable products, known as ferecrystals, which are otherwise inaccessible. This work focuses on the expansion of the modulated elemental reactants technique for the formation of ferecrystals containing multiple constituents. As a starting point, the synthesis of the first alloy ferecrystals (SnSe) 1.16-1.09([NbxMo1-x]Se2) will be discussed. The structural and electrical characterization of these compounds will then be used to determine the intermixing of the first three component ferecrystal heterojunction ([SnSe]1+delta)([{MoxNb1-x}Se 2]1+gamma)([SnSe]1+delta)({NbyMo 1-y}Se2). Then, by synthesizing ([SnSe]1+delta) m([{MoxNb1-x}Se2]1+gamma )1([SnSe]1+delta)m({Nb xMo1-x}Se2)1 (m = 0 - 4) compounds with increasing thicknesses of SnSe, the interdiffusion of miscible constituents in ferecrystals will be studied. In addition, by comparison of the ([SnSe] 1+delta)m ([{MoxNb1-x }Se2]1+gamma)1([Sn

  5. Tunable hyperbolic metamaterials utilizing phase change heterostructures

    SciTech Connect

    Krishnamoorthy, Harish N. S.; Menon, Vinod M.; Zhou, You; Ramanathan, Shriram; Narimanov, Evgenii

    2014-03-24

    We present a metal-free tunable anisotropic metamaterial where the iso-frequency surface is tuned from elliptical to hyperbolic dispersion by exploiting the metal-insulator phase transition in the correlated material vanadium dioxide (VO{sub 2}). Using VO{sub 2}-TiO{sub 2} heterostructures, we demonstrate the transition in the effective dielectric constant parallel to the layers to undergo a sign change from positive to negative as the VO{sub 2} undergoes the phase transition. The possibility to tune the iso-frequency surface in real time using external perturbations such as temperature, voltage, or optical pulses creates new avenues for controlling light-matter interaction.

  6. Tunneling for a novel Pascal heterostructure.

    NASA Astrophysics Data System (ADS)

    López-Cruz, E.; Cocoletzi, Gregorio H.

    1998-03-01

    The well known Pascal triangle is used to obtain a new numerical array and then semiconductor heterostructures(E. López-Cruz and G. H. Cocoletzi, Suplemento del Bol. Soc. Mex. Fis. 11-3), 7 (1997). are formed in order to investigate theoretically electronic tunneling phenomena. AlGaAs/GaAs materials are considered to write the hamiltonian of the electrons and solve the Schroedinger equation for the envelope function. Numerical calculations are performed on the transmission coefficient taking into account the structural parameters. Results show resonances as well as the presence of minibands and minigaps for high number of layers. It is explained how the tunneling structure behaves as the numerical array is changed.

  7. Giant switchable Rashba effect in oxide heterostructures

    SciTech Connect

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; Yin, Wei-Guo; Yunoki, Seiji; Held, Karsten

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, induces a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.

  8. Giant switchable Rashba effect in oxide heterostructures

    DOE PAGES

    Zhong, Zhicheng; Si, Liang; Zhang, Qinfang; ...

    2015-03-01

    One of the most fundamental phenomena and a reminder of the electron’s relativistic nature is the Rashba spin splitting for broken inversion symmetry. Usually this splitting is a tiny relativistic correction. Interfacing ferroelectric BaTiO₃ and a 5d (or 4d) transition metal oxide with a large spin-orbit coupling, Ba(Os,Ir,Ru)O₃, we show that giant Rashba spin splittings are indeed possible and even controllable by an external electric field. Based on density functional theory and a microscopic tight binding understanding, we conclude that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, inducesmore » a large (Os,Ir,Ru)-O distortion. The BaTiO₃/Ba(Os,Ru,Ir)O₃ heterostructure is hence the ideal test station for switching and studying the Rashba effect and allows applications at room temperature.« less

  9. Optimal light harvesting in 2D semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Zhesheng; Biscaras, Johan; Shukla, Abhay

    2017-06-01

    Optoelectronics with two dimensional (2D) heterostructures combining transition metal dichalcogenides (TMDCs) and other semiconductors in hybrid stacks is potentially promising because of the possibility of fabricating devices with high efficiency and new properties. Ultrafast charge transfer across the interface and long lifetime of carriers makes the vertical geometry attractive with respect to traditional bulk heterostructures. In such ultrathin structures, the multiple boundaries and the thickness of each material play a key role in the interaction of light with the device and can strongly influence the device performance. In this article we study light harvesting in 2D InSe/MoS2 semiconductor heterostructures by measuring Raman enhancement or attenuation as a function of layer thicknesses. Measurements are precisely reproduced by the calculation of the light emission, and the field distribution inside the heterostructure. Optimizing layer thickness and material interfaces has a significant effect on the light distribution in such 2D heterostructures with layer thickness in the region of a few tens of nanometers, providing a means to enhance the performance of emerging 2D semiconductor-heterostructure optoelectronics.

  10. Organic heterostructures deposited by MAPLE on AZO substrate

    NASA Astrophysics Data System (ADS)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Stanculescu, F.; Iftimie, S.; Girtan, M.; Popescu-Pelin, G.; Socol, G.

    2017-09-01

    Organic heterostructures based on poly(3-hexylthiophene) (P3HT) and fullerene (C60) as blends or multilayer were deposited on Al:ZnO (AZO) by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. The AZO layers were obtained by Pulsed Laser Deposition (PLD) on glass substrate, the high quality of the films being reflected by the calculated figure of merit. The organic heterostructures were investigated from morphological, optical and electrical point of view by atomic force microscopy (AFM), UV-vis spectroscopy, photoluminescence (PL) and current-voltage (I-V) measurements, respectively. The increase of the C60 content in the blend heterostructure has as result a high roughness. Compared with the multilayer heterostructure, those based on blends present an improvement in the electrical properties. Under illumination, the highest current value was recorded for the heterostructure based on the blend with the higher C60 amount. The obtained results showed that MAPLE is a useful technique for the deposition of the organic heterostructures on AZO as transparent conductor electrode.

  11. Band alignment of two-dimensional lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Zhang, Junfeng; Xie, Weiyu; Zhao, Jijun; Zhang, Shengbai

    2017-03-01

    Recent experimental synthesis of two-dimensional (2D) heterostructures opens a door to new opportunities in tailoring the electronic properties for novel 2D devices. Here, we show that a wide range of lateral 2D heterostructures could have a prominent advantage over the traditional three-dimensional (3D) heterostructures, because their band alignments are insensitive to the interfacial conditions. They should be at the Schottky-Mott limits for semiconductor-metal junctions and at the Anderson limits for semiconductor junctions, respectively. This fundamental difference from the 3D heterostructures is rooted in the fact that, in the asymptotic limit of large distance, the effect of the interfacial dipole vanishes for 2D systems. Due to the slow decay of the dipole field and the dependence on the vacuum thickness, however, studies based on first-principles calculations often failed to reach such a conclusion. Taking graphene/hexagonal-BN and MoS2/WS2 lateral heterostructures as the respective prototypes, we show that the converged junction width can be order of magnitude longer than that for 3D junctions. The present results provide vital guidance to high-quality transport devices wherever a lateral 2D heterostructure is involved.

  12. Vibrating property of single Ge based heterostructure nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Yao; Wang, Chunrui; Xu, Jing

    2013-12-01

    Raman spectrum of single heterostructure nanowire can reflect its unusual lattice vibrations as well as the junction features. In this paper, we report Raman spectra of two morphologies of single Ge based heterostructure nanowire, that is, one is CdSe/Ge biaxial heterostructure nanowires(sample I), another is Ge nanowires is surrounded by CdSe nanoparticles (sample II), which is fabricated by one step thermal evaporation of CdSe and Ge powder. A new mode was observed in Raman spectrum of Ge nanowires surrounded by CdSe nanoparticles, which caused by the interaction of LO mode of CdSe and LO (TO) mode of Ge. The LO (TO) mode of Ge nanowire in CdSe/Ge biaxial heterostructure nanowires and Ge nanowires surrounded by CdSe nanoparticles all has a red-shift in comparison with that of Ge nanowires. The vibrational mode of CdSe in CdSe/Ge biaxial heterostructure nanowires has a red-shift. The vibrational mode of CdSe in Ge nanowires surrounded by CdSe nanoparticles has a blue-shift. The red-shift mode may be caused by quantum confinement effect. The blue-shift mode may be originated from tensile stress or high density of stacking defects. The vibrating mode of the heterostructure nanowires was much sensitive to stacking fault than to quantum confinement effect when the diameter of nanowire is larger than 300nm.

  13. Double exchange bias in ferrimagnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Hebler, B.; Reinhardt, P.; Katona, G. L.; Hellwig, O.; Albrecht, M.

    2017-03-01

    We report on the magnetic reversal characteristics of exchange coupled ferrimagnetic (FI) T b19F e81/T b36F e64 heterostructures. Both layers are amorphous and exhibit strong perpendicular magnetic anisotropy. The investigated heterostructures consist of a Tb-dominated and a Fe-dominated FI layer. Thus, in the magnetic ground state the net moments of the individual layers are oppositely aligned due to antiferromagnetic coupling of Fe and Tb moments. By cooling the system below 160 K, a large positive and negative exchange bias (EB) effect appears for the Tb- and Fe-dominated layers, respectively. The biasing depends only on the initial magnetization state and is neither affected by a cooling field nor by loop cycling. The phenomenon can be explained by the presence of a hard magnetic Fe-dominated interfacial layer, which forms during the sputter deposition process due to interface mixing and resputtering effects. This interfacial layer acts as a pinning layer below a certain temperature, where its coercivity increases to values larger than the accessible magnetic field range. This assumption is further supported by introducing a 0.9-nm-thick Ru spacer layer, which causes the EB effect to vanish. The EB effect was further investigated for a sample series, where the thickness ratio of the two Tb-Fe layers was varied, while keeping the total thickness of the bilayers constant. Only samples where the individual layers are sufficiently thick reveal double shifted loops, indicating the high sensitivity of the observed bias effect with respect to the magnetic properties of the individual layers and their interfacial area.

  14. Magnetoelectric imaging of multiferroic heterostructures (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Ghidini, Massimo; Lesaine, Arnaud; Zhu, Bonan; Moya, Xavier; Yan, Wenjing; Crossley, Sam; Nair, Bhasi; Mansell, Rhodri; Cowburn, Russell P.; Barnes, Crispin H. W.; Kronast, Florian; Valencia, Sergio; Maccherozzi, Francesco; Dhesi, Sarnjeet S.; Mathur, Neil

    2015-09-01

    Electrical control of magnetism has been demonstrated in multiferroic compounds and ferromagnetic semiconductors, but electrical switching of a substantial net magnetization at room temperature has not been demonstrated in these materials. This goal has instead been achieved in heterostructures comprising ferromagnetic films in which electrically driven magnetic changes arise due to strain or exchange bias from ferroic substrates, or due to charge effects induced by a gate. However, previous work focused on electrical switching of an in-plane magnetization or involved the assistance of applied magnetic fields. In heterostructures made of juxtaposed ferroelectric and ferromagnetic layers, we have shown electrical control with no applied magnetic field of the perpendicular magnetization of small features [1] and of magnetic stripe domains patterns [2]. Here we investigate Ni81Fe19 films on ferroelectric substrates with and without buffer layers of Cu, whose presence precludes charge-mediated coupling. Ni81Fe19 has virtually zero magnetostriction, but sufficiently thin films show large magnetostriction, and thus, on increasing film thickness through the threshold for zero magnetostriction, we have seeked the crossover from charge- to strain-mediated coupling. We will then show that strain associated with the motion of 90°- ferroelectric domain walls in a BaTiO3 substrate, can switch the magnetization of an array of overlying single-domain Ni dots. [1] M. Ghidini, R. Pellicelli, J. L. Prieto, X. Moya, J. Soussi, J. Briscoe, S. Dunn and N. D. Mathur, Nature Communications 4 (2013) 1453. [2] M. Ghidini, F.Maccherozzi, X. Moya, L. C. Phillips, W.Yan, J. Soussi, N. Métallier, M.Vickers, , N. -J.Steinke, R. Mansell, C. H. W. Barnes, S. S. Dhesi, and N. D. Mathur, Adv. Mater.doi: 10.1002/adma.201404799 (2015).

  15. Heterostructures of Topological Insulators and Superconductors

    NASA Astrophysics Data System (ADS)

    Lababidi, Mahmoud

    Topological insulators (TI), such as Bi2Se 3, are a new class of quantum materials discovered recently. They are insulating in the bulk but can conduct on the surfaces. The robust surface states of three-dimensional strong TIs form a unique two-dimensional system of massless electrons, known as a helical metal, with a linear energy-momentum dispersion and spin-momentum locking. While these surface modes alone have spurred great interest, their interaction with superconductors (S) in close proximity has opened up opportunities to engineer topological superconductivity using TI-S heterostructures. This thesis is a microscopic, self-consistent theoretical investigation of the interplay between TI and superconductors. Three types of TI-based heterostructures with increasing complexity are studied in detail. We first present a detailed study of the coupling between a metal and a topological insulator. We compute the spin-active scattering matrix for electrons coming from the metal incident on the metal-TI interface. We find that there exists a critical incident angle, where perfect spin-flip occurs as the incoming electron is reflected. We discuss the origin of this phenomena and its potential implications in spintronics. We then compute the local spectrum at the metal-TI interface, and examine its evolution from the tunneling limit (bad contact) to the strong coupling limit (good contact). The calculations are done using two complementary approaches; in a continuum model based on a k·p Hamiltonian a wave function matching approach is taken and the lattice model requires the use of lattice Green's functions. The study of metal-TI interface lays the foundation for our subsequent theory of S-TI interface. Next we carry out microscopic, self-consistent calculations of the superconducting order parameter and pairing correlations near a S-TI interface, where S is an s-wave superconductor. We discuss the suppression of the order parameter by the topological insulator and

  16. DX centers in indium aluminum arsenide heterostructures

    NASA Astrophysics Data System (ADS)

    Sari, Huseyin

    DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model

  17. Growth of Novel Semiconducting Nano and Heterostructures

    NASA Astrophysics Data System (ADS)

    Rathi, Somilkumar J.

    This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In2Se3/Bi 2Se3 heterostructures and graphene. The first part of the thesis was focused on the growth and characterization of lateral SiNW. Lateral here refers to wires growing along the plane of substrate; vertical NW on the other hand grow out of the plane of substrate. It was found, using the Au-seeded vapor -- liquid -- solid technique, that epitaxial single-crystal SiNW can be grown laterally along Si(111) substrates that have been miscut toward [11- 2]. The ratio of lateral-to-vertical NW was found to increase as the miscut angle increased and as disilane pressure and substrate temperature decreased. Based on this observation, growth parameters were identified whereby all of the deposited Au seeds formed lateral NW. Furthermore, the nanofaceted substrate guided the growth via a mechanism that involved pinning of the trijunction at the liquid/solid interface of the growing nanowire. Next, the growth of selenide heterostructures was explored. Specifically, molecular beam epitaxy was utilized to grow In2Se3 and Bi2Se3 films on h-BN, highly oriented pyrolytic graphite and Si(111) substrates. Growth optimizations of In2Se3 and Bi2Se3 films were carried out by systematically varying the growth parameters. While the growth of these films was demonstrated on h-BN and HOPG surface, the majority of the effort was focused on growth on Si(111). Atomically flat terraces that extended laterally for several hundred nm, which were separated by single quintuple layer high steps characterized surface of the best In2Se3 films grown on Si(111). These In2Se3 films were suitable for subsequent high quality epitaxy of Bi2Se3 . The last part of this dissertation was focused on a recently initiated and ongoing study of graphene growth on liquid metal surfaces. The initial part of the study comprised a successful modification of an existing growth system to accommodate graphene

  18. Vortex jump behavior in coupled nanomagnetic heterostructures

    DOE PAGES

    Zhang, S.; Petford-Long, A. K.; Heinonen, O.; ...

    2014-11-26

    The spin configuration and magnetic behavior in patterned nanostructures can be controlled by manipulating the interplay between the competing energy terms. This in turn requires fundamental knowledge of the magnetic interactions at the local nanometer scale. Here in this article, we report on the spin structure and magnetization behavior of patterned discs containing exchange coupled ferromagnetic layers with additional exchange bias to an antiferromagnetic layer. The magnetization reversal was explored by direct local visualization of the domain behavior using in-situ Lorentz transmission electron microscopy, from which quantitative magnetic induction maps were reconstructed. The roles of the main competing energy termsmore » were elucidated and the reversal mechanism was identified as a coupled phenomenon of incoherent rotation in the exchange-biased layer and localized vortex nucleation and discontinuous propagation in the free layer, including an anomalous jump in the trajectory. The observations were supported by micromagnetic simulations and modeled phase shift simulations. In conclusion, the work presented here provides fundamental insights into opportunities for macroscopic control of the energy landscape of magnetic heterostructures for functional applications.« less

  19. Magnetization reversal in Py/Gd heterostructures

    NASA Astrophysics Data System (ADS)

    Lapa, Pavel N.; Ding, Junjia; Pearson, John E.; Novosad, Valentine; Jiang, J. S.; Hoffmann, Axel

    2017-07-01

    Using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic-field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order of Gd. Micromagnetic simulations demonstrate that a spin-flop transition observed in a Py/Gd bilayer is due to exchange-spring rotation of magnetization in the Gd layer. Transport measurements show that the magnetoresistance of a [Py(2 nm ) /Gd (2 nm ) ] 25 multilayer changes sign at the compensation temperature and below 20 K. The positive magnetoresistance above the compensation temperature can be attributed to an in-plane domain wall, which appears because of the structural inhomogeneity of the film over its thickness. By measuring the angular dependence of resistance, we are able to determine the angle between magnetizations in the multilayer and the magnetic field at different temperatures. The measurements reveal that, due to a change in the chemical thickness profile, a noncollinear magnetization configuration is only stable in magnetic fields above 10 kOe.

  20. Magnetization reversal in Py/Gd heterostructures

    DOE PAGES

    Lapa, Pavel N.; Ding, Junjia; Pearson, John E.; ...

    2017-07-13

    Here, using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic-field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order of Gd. Micromagnetic simulations demonstrate that a spin-flop transition observed in a Py/Gd bilayer is due to exchange-spring rotation of magnetization in the Gd layer. Transport measurements show that the magnetoresistance of a [Py(2nm)/Gd(2nm)]25 multilayer changes sign at the compensation temperature and below 20 K. The positive magnetoresistance above the compensation temperature can be attributed to an in-plane domain wall, which appears because of the structural inhomogeneity of themore » film over its thickness. By measuring the angular dependence of resistance, we are able to determine the angle between magnetizations in the multilayer and the magnetic field at different temperatures. The measurements reveal that, due to a change in the chemical thickness profile, a noncollinear magnetization configuration is only stable in magnetic fields above 10 kOe.« less

  1. Vortex jump behavior in coupled nanomagnetic heterostructures

    SciTech Connect

    Zhang, S.; Petford-Long, A. K.; Heinonen, O.; Phatak, C.

    2014-11-26

    The spin configuration and magnetic behavior in patterned nanostructures can be controlled by manipulating the interplay between the competing energy terms. This in turn requires fundamental knowledge of the magnetic interactions at the local nanometer scale. Here in this article, we report on the spin structure and magnetization behavior of patterned discs containing exchange coupled ferromagnetic layers with additional exchange bias to an antiferromagnetic layer. The magnetization reversal was explored by direct local visualization of the domain behavior using in-situ Lorentz transmission electron microscopy, from which quantitative magnetic induction maps were reconstructed. The roles of the main competing energy terms were elucidated and the reversal mechanism was identified as a coupled phenomenon of incoherent rotation in the exchange-biased layer and localized vortex nucleation and discontinuous propagation in the free layer, including an anomalous jump in the trajectory. The observations were supported by micromagnetic simulations and modeled phase shift simulations. In conclusion, the work presented here provides fundamental insights into opportunities for macroscopic control of the energy landscape of magnetic heterostructures for functional applications.

  2. Graphene/Si-nanowire heterostructure molecular sensors

    PubMed Central

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-01-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism. PMID:24947403

  3. Two-dimensional heterostructures: fabrication, characterization, and application

    SciTech Connect

    Wang, Hong; Liu, Fucai; Fu, Wei; Fang, Zheyu; Zhou, Wu; Liu, Zheng

    2014-08-13

    Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. Lastly, in this article, we review recent progress on the fabrication, characterization, and applications of various 2D heterostructures.

  4. Selective spin transport through a quantum heterostructure: Transfer matrix method

    NASA Astrophysics Data System (ADS)

    Dey, Moumita; Maiti, Santanu K.

    2016-09-01

    In the present work, we propose that a one-dimensional quantum heterostructure composed of magnetic and non-magnetic (NM) atomic sites can be utilized as a spin filter for a wide range of applied bias voltage. A simple tight-binding framework is given to describe the conducting junction where the heterostructure is coupled to two semi-infinite one-dimensional NM electrodes. Based on transfer matrix method, all the calculations are performed numerically which describe two-terminal spin-dependent transmission probability along with junction current through the wire. Our detailed analysis may provide fundamental aspects of selective spin transport phenomena in one-dimensional heterostructures at nanoscale level.

  5. Optical conductivity of a commensurate graphene-topological insulator heterostructure

    NASA Astrophysics Data System (ADS)

    Sanderson, Matthew; Huang, Sunchao; Bao, Qiaoliang; Zhang, Chao

    2017-09-01

    The optical conductivity of a heterostructure formed by a commensurate stacking of graphene and a topological insulator (TI) is investigated using the Kubo formalism. Both the intra- and interband AC conductivities are found to be sensitive to the graphene-TI coupling. The direct interband transition in graphene which is the origin of the universal conductance is forbidden due to the topological nature is the coupling. Furthermore, the graphene-TI coupling gives rise to additional broken symmetries, resulting in both the inter- and intraband conductivity to be reduced in the graphene-TI heterostructure. By varying the Fermi energy of the heterostructure, the band that gives the largest contribution changes, which in turn affects the overall electronic transport.

  6. One-dimensional silicon-cadmium selenide heterostructures.

    SciTech Connect

    Sun, X. H.; Sham, T. K.; Rosenberg, R. A.; Shenoy, G. K.; X-Ray Science Division; Univ. of Western Ontario

    2007-01-01

    We report the synthesis and characterization of 1D Si-CdSe heteronanostructures with different morphologies such as coaxial, biaxial, sandwiched, pattern wrapping, coiling, structures etc., via a one-step metal catalyzed thermal evaporation method. Both Si and CdSe exhibit single crystalline characteristics in the heterostructures, as revealed by scanning transmission electron microscopy. The Si nanowires formed directly from the Si substrate via the solid-liquid-solid process acts as the absorption site for CdSe deposition as well as the template for the formation of 1D Si-CdSe heterostructures. Time-resolved X-ray excited optical luminescence from the 1D Si-CdSe heteronanostructures reveals two main emission features at 530 and 637 nm with slow and fast decay lifetime, respectively. The 530 and 637 nm emission is associated with the Si and CdSe component of the heterostructures, respectively.

  7. Postsynthesis of h‐BN/Graphene Heterostructures Inside a STEM

    PubMed Central

    Tizei, Luiz H. G.; Sato, Yohei; Lin, Yung‐Chang; Yeh, Chao‐Hui; Chiu, Po‐Wen; Terauchi, Masami; Iijima, Sumio

    2015-01-01

    Combinations of 2D materials with different physical properties can form heterostructures with modified electrical, mechanical, magnetic, and optical properties. The direct observation of a lateral heterostructure synthesis is reported by epitaxial in‐plane graphene growth from the step‐edge of hexagonal BN (h‐BN) within a scanning transmission electron microscope chamber. Residual hydrocarbon in the chamber is the carbon source. The growth interface between h‐BN and graphene is atomically identified as largely N–C bonds. This postgrowth method can form graphene nanoribbons connecting two h‐BN domains with different twisting angles, as well as isolated carbon islands with arbitrary shapes embedded in the h‐BN layer. The electronic properties of the vertically stacked h‐BN/graphene heterostructures are investigated by electron energy‐loss spectroscopy (EELS). Low‐loss EELS analysis of the dielectric response suggests a robust coupling effect between the graphene and h‐BN layers. PMID:26618896

  8. Novel hybrid C/BN two-dimensional heterostructures

    NASA Astrophysics Data System (ADS)

    Kvashnin, Dmitry G.; Kvashnina, Olga P.; Avramov, Pavel V.; Sorokin, Pavel B.; Kvashnin, Alexander G.

    2017-02-01

    Here we present an investigation of new quasi-two-dimensional heterostructures based on the alternation of bounded carbon and boron nitride layers (C/BN). We carried out a theoretical study of the atomic structure, stability and electronic properties of the proposed heterostructures. Such ultrathin quasi-two-dimensional C/BN films can be synthesized by means of chemically induced phase transition by connection of the layers of multilayered h-BN/graphene van der Waals heterostructures, which is indicated by the negative phase transition pressure in the calculated phase diagrams (P, T) of the films. It was shown that the band gap value of the C/BN films spans the infrared and visible spectrum. We hope that the proposed films and fabrication method can be considered as a possible route to obtain nanostructures with a controllable band gap in wide energy range. This makes these materials potentially suitable for a variety of applications, including photovoltaics, photoelectronics and more.

  9. Charge transfer driven emergent phenomena in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Hanghui; Millis, Andrew

    2017-06-01

    Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

  10. Novel hybrid C/BN two-dimensional heterostructures.

    PubMed

    Kvashnin, Dmitry G; Kvashnina, Olga P; Avramov, Pavel V; Sorokin, Pavel B; Kvashnin, Alexander G

    2017-02-24

    Here we present an investigation of new quasi-two-dimensional heterostructures based on the alternation of bounded carbon and boron nitride layers (C/BN). We carried out a theoretical study of the atomic structure, stability and electronic properties of the proposed heterostructures. Such ultrathin quasi-two-dimensional C/BN films can be synthesized by means of chemically induced phase transition by connection of the layers of multilayered h-BN/graphene van der Waals heterostructures, which is indicated by the negative phase transition pressure in the calculated phase diagrams (P, T) of the films. It was shown that the band gap value of the C/BN films spans the infrared and visible spectrum. We hope that the proposed films and fabrication method can be considered as a possible route to obtain nanostructures with a controllable band gap in wide energy range. This makes these materials potentially suitable for a variety of applications, including photovoltaics, photoelectronics and more.

  11. Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Park, Hee Chul; Myung, Nojoon; Lee, Seung Joo

    We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is electrically controlled via gate voltages. We also demonstrate that the tunneling current of Dirac fermions can be prohibited when the spin configuration of ferromagnetic graphene sheets is opposite. Giant electroresistance can thus be developed by using the proposed heterostructure in this study. The effects of temperature on spin transport and the giant electroresistance ratio are also investigated. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures through electric fields via gate and bias electrodes. The research leading to these results has received funding from the European Union Seventh Framework Programme under grant agreement No604391 Graphene Flagship, Project Code (IBS-R024-D1), and the NRF grant funded by MSIP(No. 2014-066298).

  12. Electron scattering times in ZnO based polar heterostructures

    SciTech Connect

    Falson, J.; Kozuka, Y.; Smet, J. H.; Arima, T.; Tsukazaki, A.; Kawasaki, M.

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  13. Two-dimensional heterostructures: fabrication, characterization, and application

    DOE PAGES

    Wang, Hong; Liu, Fucai; Fu, Wei; ...

    2014-08-13

    Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. Lastly, in this article, we review recent progress on the fabrication, characterization, and applications of variousmore » 2D heterostructures.« less

  14. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    NASA Astrophysics Data System (ADS)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  15. Magnetometory of AlGaN/GaN heterostructure wafers

    NASA Astrophysics Data System (ADS)

    Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

    2005-06-01

    AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

  16. High-frequency dynamics of hybrid oxide Josephson heterostructures

    NASA Astrophysics Data System (ADS)

    Komissinskiy, P.; Ovsyannikov, G. A.; Constantinian, K. Y.; Kislinski, Y. V.; Borisenko, I. V.; Soloviev, I. I.; Kornev, V. K.; Goldobin, E.; Winkler, D.

    2008-07-01

    We summarize our results on Josephson heterostructures Nb/Au/YBa2Cu3Ox that combine conventional (S) and oxide high- Tc superconductors with a dominant d -wave symmetry of the superconducting order parameter (D). The heterostructures were fabricated on (001) and (1 1 20) YBa2Cu3Ox films grown by pulsed laser deposition. The structural and surface studies of the (1 1 20) YBa2Cu3Ox thin films reveal nanofaceted surface structure with two facet domain orientations, which are attributed as (001) and (110)-oriented surfaces of YBa2Cu3Ox and result in S/D(001) and S/D(110) nanojunctions formed on the facets. Electrophysical properties of the Nb/Au/YBa2Cu3Ox heterostructures are investigated by the electrical and magnetic measurements at low temperatures and analyzed within the faceting scenario. The superconducting current-phase relation (CPR) of the heterostructures with finite first and second harmonics is derived from the Shapiro steps, which appear in the I-V curves of the heterostructures irradiated at frequencies up to 100 GHz. The experimental positions and amplitudes of the Shapiro steps are explained within the modified resistive Josephson junction model, where the second harmonic of the CPR and capacitance of the Josephson junctions are taken into account. We experimentally observe a crossover from a lumped to a distributed Josephson junction limit for the size of the heterostructures smaller than Josephson penetration depth. The effect is attributed to the variations of the harmonics of the superconducting CPR across the heterojunction, which may give rise to splintered vortices of magnetic flux quantum. Our investigations of parameters and phenomena that are specific for superconductors having d -wave symmetry of the superconducting order parameter may be of importance for applications such as high-frequency detectors and novel elements of a possible quantum computer.

  17. Photo doping effect in graphene/BN heterostructure

    NASA Astrophysics Data System (ADS)

    Ju, Long; Velasco, Jairo, Jr.; Hwang, Edwin; Kim, Jonghwan; Wang, Feng

    2013-03-01

    Boron nitride has been demonstrated as an ideal substrate to achieve high mobility in graphene. At the same time We observed strong change of graphene transport properties by shining light on graphene/BN heterostructure. This is attributed to photo doping effect induced by impurity excitation in BN. Optical spectroscopy based on this photo-doping effects enables us to probe impurities in crystalline BN. Such information will be important for potential applications based on graphene/BN heterostructures. The potential of applying similar technique to probe defects in other insulators and semiconductors will also be discussed.

  18. Inverse spin galvanic effect in topological-insulator based heterostructures

    NASA Astrophysics Data System (ADS)

    Rodriguez-Vega, Martin; Schwiete, Georg; Sinova, Jairo; Rossi, Enrico

    2015-03-01

    We study the inverse spin galvanic effect in heterostructures formed by a layer of a three dimensional strong topological insulator (TI) and a magnetic material. We consider different configurations for the heterostructure and for the contacts. We carefully treat the effect on the TI bands of the proximity of a magnetic material and take into account both intra-band and inter-band contributions to the current-induced spin polarization of the TI surface states. Finally, we discuss the relevance of our results for recent experiments. Work supported by ONR-N00014-13-1-0321, ACS-PRF # 53581-DNI5, and the Jeffress Memorial Trust.

  19. Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

    PubMed

    Fallahazad, Babak; Lee, Kayoung; Kang, Sangwoo; Xue, Jiamin; Larentis, Stefano; Corbet, Christopher; Kim, Kyounghwan; Movva, Hema C P; Taniguchi, Takashi; Watanabe, Kenji; Register, Leonard F; Banerjee, Sanjay K; Tutuc, Emanuel

    2015-01-14

    We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

  20. Vertical-cavity in-plane heterostructures: Physics and applications

    SciTech Connect

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-11-02

    We show that in-plane (lateral) heterostructures realized in vertical cavities with high contrast grating reflectors can be used to significantly modify the anisotropic dispersion curvature, also interpreted as the photon effective mass. This design freedom enables exotic configurations of heterostructures and many interesting applications. The effects of the anisotropic photon effective mass on the mode confinement, mode spacing, and transverse modes are investigated. As a possible application, the method of boosting the speed of diode lasers by engineering the photon-photon resonance is discussed. Based on this platform, we propose a system of two laterally coupled cavities, which shows the breaking of parity-time symmetry in vertical cavity structures.

  1. Ion-implanted planar-buried-heterostructure diode laser

    DOEpatents

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1991-01-01

    A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  2. Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

    SciTech Connect

    Ryzhii, V.; Ryzhii, M.; Mitin, V.; Shur, M. S.; Otsuji, T.

    2015-11-14

    Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore, such remote doping helps to surpass the intraband (Drude) absorption, and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared with previously proposed GBL-based THz lasers.

  3. Confinement of Surface Plasmon Polaritons by Heterostructures of Plasmonic Crystals.

    PubMed

    Saito, Hikaru; Mizuma, Shohei; Yamamoto, Naoki

    2015-10-14

    Square lattice plasmonic crystals (SQ-PlCs) composed of silver pillars generate large bandgaps for surface plasmon polaritons (SPPs). SPP confinement is demonstrated using one- and two-dimensional heterostructures of SQ-PlCs comprised of cylindrical pillars with different diameters in a common square lattice. Two kinds of localized modes are observed to appear in the heterostructures by photon map imaging using cathodoluminescence (CL) technique combined with a scanning transmission electron microscopy (STEM). Angle-resolved CL spectroscopy reveals contrasting characteristics of the two localized modes in their emission distributions, indicating that they originate from the band-edge A and E modes of the matrix SQ-PlC.

  4. Slidable atomic layers in van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Kobayashi, Yu; Taniguchi, Takashi; Watanabe, Kenji; Maniwa, Yutaka; Miyata, Yasumitsu

    2017-04-01

    We report the preparation and manipulation of slidable atomic layers in clean, incommensurate van der Waals (vdW) heterostructures. Monolayer and multilayer WS2 grains are grown on graphite and hexagonal boron nitride (hBN) via chemical vapor deposition, and these grains can slide smoothly on graphite and hBN surfaces by manipulation with a tip. Furthermore, this sliding process allows the suspension, tearing, stacking, and connection of the atomic layers. These results demonstrate a novel approach for developing a wide variety of atomic-layer heterostructures with tunable interlayer coupling and an ideal system for studying the superlubricity of incommensurate, highly clean vdW contacts.

  5. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    SciTech Connect

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  6. Electronic transport in graphene-based heterostructures

    SciTech Connect

    Tan, J. Y.; Avsar, A.; Balakrishnan, J.; Taychatanapat, T.; O'Farrell, E. C. T.; Eda, G.; Castro Neto, A. H.; Koon, G. K. W.; Özyilmaz, B.; Watanabe, K.; Taniguchi, T.

    2014-05-05

    While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS{sub 2}) and molybdenum disulfide (MoS{sub 2})) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ∼0.1 nm) compared to conventional SiO{sub 2} substrate. While our results confirm that graphene devices exhibit very high electronic mobility (μ) on BN substrates, graphene devices on WS{sub 2} substrates (G/WS{sub 2}) are equally promising for high quality electronic transport (μ ∼ 38 000 cm{sup 2}/V s at room temperature), followed by G/MoS{sub 2} (μ ∼ 10 000 cm{sup 2}/V s) and G/GaSe (μ ∼ 2200 cm{sup 2}/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS{sub 2} and G/MoS{sub 2} heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

  7. CNx/Si thin heterostructures for miniaturized temperature sensors

    NASA Astrophysics Data System (ADS)

    Simeonov, S.; Szekeres, A.; György, E.; Mihailescu, I. N.; Perrone, A.

    2004-05-01

    CNx/Si thin heterostructures were synthesized on Si <111> substrates by XeCl* excimer laser (λ=308 nm, τFWHM≅30 ns) ablation of nuclear grade graphite targets in 5 Pa nitrogen at room temperature. We investigated the current-voltage and capacitance-voltage characteristics of heterostructures obtained at 77 and 300 K. We monitored their conductance and capacitance as a function of the bias voltage applied, in the 100 Hz-1 MHz frequency range. Our results revealed the formation of deep localized electron states both inside the thin CNx films and at the CNx/Si substrate interface. The investigations evidenced that conduction through the CNx/Si thin heterostructure is of trap-assisted tunneling type. The experimental studies show quite a large decrease in capacitance and increase in conductance with the increase of applied frequency. The capacitance of the CNx/Si thin heterostructures increases with a decrease of the temperature. All the results support the potential development of new types of high sensitivity temperature sensors.

  8. Synthesis and magnetic properties of manganite multiple heterostructure nanoribbons.

    PubMed

    Yu, Jiangying; Huang, Kai; Wu, Heyun; Li, Ping

    2012-09-14

    The fabrication and applications of two-dimensional complex oxide heterostructures have gained great attention. However, the achievement of these materials in one-dimensional form with multiple interfaces is still elusive. Here, we report the growth of manganite CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons via the use of CaMnO(3) powders as the precursor for the molten-salt process. In contrast with the antiferromagnetism in CaMn(3)O(6) and CaMn(2)O(4) in the bulk, magnetization measurements indicate the coexistence of a ferromagnetic phase with a spin-glass-like component in CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons. An asymmetric magnetization hysteresis loop observed in the applied magnetic field H≤ 3 T is attributed to the coupling between the antiferromagnetic phase and the ferromagnetic or spin-glass-like phase in CaMn(3)O(6)/CaMn(2)O(4) heterostructure nanoribbons.

  9. Carbon-Nanotube-Confined Vertical Heterostructures with Asymmetric Contacts.

    PubMed

    Zhang, Jin; Zhang, Kenan; Xia, Bingyu; Wei, Yang; Li, Dongqi; Zhang, Ke; Zhang, Zhixing; Wu, Yang; Liu, Peng; Duan, Xidong; Xu, Yong; Duan, Wenhui; Fan, Shoushan; Jiang, Kaili

    2017-08-21

    Van der Waals (vdW) heterostructures have received intense attention for their efficient stacking methodology with 2D nanomaterials in vertical dimension. However, it is still a challenge to scale down the lateral size of vdW heterostructures to the nanometer and make proper contacts to achieve optimized performances. Here, a carbon-nanotube-confined vertical heterostructure (CCVH) is employed to address this challenge, in which 2D semiconductors are asymmetrically sandwiched by an individual metallic single-walled carbon nanotube (SWCNT) and a metal electrode. By using WSe2 and MoS2 , the CCVH can be made into p-type and n-type field effect transistors with high on/off ratios even when the channel length is 3.3 nm. A complementary inverter was further built with them, indicating their potential in logic circuits with a high integration level. Furthermore, the Fermi level of SWCNTs can be efficiently modulated by the gate voltage, making it competent for both electron and hole injection in the CCVHs. This unique property is shown by the transition of WSe2 CCVH from unipolar to bipolar, and the transition of WSe2 /MoS2 from p-n junction to n-n junction under proper source-drain biases and gate voltages. Therefore, the CCVH, as a member of 1D/2D mixed heterostructures, shows great potentials in future nanoelectronics and nano-optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. IZO deposited by PLD on flexible substrate for organic heterostructures

    NASA Astrophysics Data System (ADS)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Rasoga, O.; Stanculescu, F.; Socol, G.

    2017-05-01

    In:ZnO (IZO) thin films were deposited on flexible plastic substrates by pulsed laser deposition (PLD) method. The obtained layers present adequate optical and electrical properties competitive with those based on indium tin oxide (ITO). The figure of merit (9 × 10-3 Ω-1) calculated for IZO layers demonstrates that high quality coatings can be prepared by this deposition technique. A thermal annealing (150 °C for 1 h) or an oxygen plasma etching (6 mbar for 10 min.) were applied to the IZO layers to evaluate the influence of these treatments on the properties of the transparent coatings. Using vacuum evaporation, organic heterostructures based on cooper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on the untreated and treated IZO layers. The optical and electrical properties of the heterostructures were investigated by UV-Vis, FTIR and current-voltage ( I- V) measurements. For the heterostructure fabricated on IZO treated in oxygen plasma, an improvement in the current value with at least one order of magnitude was evidenced in the I- V characteristics recorded in dark conditions. Also, an increase in the current value for the heterostructure deposited on untreated IZO layer can be achieved by adding an organic layer such as tris-8-hydroxyquinoline aluminium (Alq3).

  11. Graphene-polymer multilayer heterostructure for terahertz metamaterials

    NASA Astrophysics Data System (ADS)

    Xu, Zaiquan; Chen, Caiyun; Wu, Steve Q. Y.; Wang, Bing; Teng, Jinghua; Zheng, Chao; Bao, Qiaoliang

    2013-12-01

    The optical response and plasmon coupling between graphene sheets for graphene/polymer multilayer heterostructures with controlled separation were systematically investigated. Anomalous transmission of light was experimentally observed in mid-infrared range. The position of the broad passband in the transmission spectra was observed to red-shift with the increase of the number of layers.

  12. Ab initio simulations of pseudomorphic silicene and germanene bidimensional heterostructures

    NASA Astrophysics Data System (ADS)

    Debernardi, Alberto; Marchetti, Luigi

    2016-06-01

    Among the novel two-dimensional (2D) materials, silicene and germanene, which are two honeycomb crystal structures composed of a monolayer of Si and Ge, respectively, have attracted the attention of material scientists because they combine the advantages of the new 2D ultimate-scaled electronics with their compatibility with industrial processes presently based on Si and Ge. We envisage pseudomorphic lateral heterostructures based on ribbons of silicene and germanene, which are the 2D analogs of conventional 3D Si/Ge superlattices and quantum wells. In spite of the considerable lattice mismatch (˜4 % ) between free-standing silicene and germanene, our ab initio simulations predict that, considering striped 2D lateral heterostructures made by alternating silicene and germanene ribbons of constant width, the silicene/germanene junction remains pseudomorphic—i.e., it maintains lattice-matched edges—up to critical ribbon widths that can reach some tens of nanometers. Such critical widths are one order of magnitude larger than the critical thickness measured in 3D pseudomorphic Si/Ge heterostructures and the resolution of state-of-the-art lithography, thus enabling the possibility of lithography patterned silicene/germanene junctions. We computed how the strain produced by the pseudomorphic growth modifies the crystal structure and electronic bands of the ribbons, providing a mechanism for band-structure engineering. Our results pave the way for lithography patterned lateral heterostructures that can serve as the building blocks of novel 2D electronics.

  13. FAST TRACK COMMUNICATION: Escher-like quasiperiodic heterostructures

    NASA Astrophysics Data System (ADS)

    Barriuso, A. G.; Monzón, J. J.; Sánchez-Soto, L. L.; Costa, A. F.

    2009-05-01

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems.

  14. Ab initio study of II-(VI)2 dichalcogenides

    NASA Astrophysics Data System (ADS)

    Olsson, P.; Vidal, J.; Lincot, D.

    2011-10-01

    The structural stabilities of the (Zn,Cd)(S,Se,Te)2 dichalcogenides have been determined ab initio. These compounds are shown to be stable in the pyrite phase, in agreement with available experiments. Structural parameters for the ZnTe2 pyrite semiconductor compound proposed here are presented. The opto-electronic properties of these dichalcogenide compounds have been calculated using quasiparticle GW theory. Bandgaps, band structures and effective masses are proposed as well as absorption coefficients and refraction indices. The compounds are all indirect semiconductors with very flat conduction band dispersion and high absorption coefficients. The work functions and surface properties are predicted. The Te and Se based compounds could be of interest as absorber materials in photovoltaic applications.

  15. Vacancy formation energies in II-VI semiconductors

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.

    1987-01-01

    Cation and anion vacancy formation energies are calculated for HgTe, ZnTe, CdTe, and their dilute alloys. Harrison's tight-bonding theory is extended to a cluster embedded in an extended crystal. Only neutral vacancies have been considered, and two final states for the removed atom have been addressed: a free atom in vacuum and an atom on an ideal (111) surface.

  16. Structural transformations in II-VI semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ricolleau, C.; Audinet, L.; Gandais, M.; Gacoin, T.

    Colloidal CdS and CdS/ZnS nanostructures were obtained by nucleation and growth in colloidal solution. Their mean sizes range between 3 and 10 nm. The structural properties were studied by the use of high-resolution transmission electron microscopy (HRTEM). Phase transition between the metastable cubic blende-type structure and the stable hexagonal wurtzite-type structure was evidenced to be a function of the size of the CdS clusters. The mechanism of the transition involving stacking faults was determined by the heating of CdS clusters at 200 °C for 30 h. Results concerning structural relations between CdS and ZnS that occur during the epitaxial growth of ZnS on the CdS nanocrystals showed the existence of the hexagonal structure of ZnS, which is the high-temperature phase of ZnS.

  17. Modeling of mechanical properties of II-VI materials

    NASA Technical Reports Server (NTRS)

    Sher, A.; Berding, M. A.; Van Schilfgaarde, M.; Chen, A.-B.; Patrick, R.

    1988-01-01

    This paper reviews some new developments in the theory of alloy correlations, order-disorder transitions, and solidus phase-transition curves. It is argued that semiconductor alloys are never truly random, and the various phenomena that drive deviations from random arrangements are introduced. Likely consequences of correlations on the ability to fine-tune the lattice match of epitaxial layers to substrates, on vacancy formation, on diffusion, and on vapor-phase crystal growth are discussed. Examples are chosen for the alloys Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Cd(1-y)Zn(y)Te, and CdSe(1-y)Te(y).

  18. Elastic and piezoelectric properties of zincblende and wurtzite crystalline nanowire heterostructures.

    PubMed

    Boxberg, Fredrik; Søndergaard, Niels; Xu, H Q

    2012-09-04

    The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire heterostructures have been studied using electro-elastically coupled continuum elasticity theory. A comprehensive comparison of strains, piezoelectric potentials and piezoelectric fields in the two crystal types of nanowire heterostructures is presented. For each crystal type, three different forms of heterostructures-core-shell, axial superlattice, and quantum dot nanowire heterostructures-are considered. In the studied nanowire heterostructures, the principal strains are found to be insensitive to the change in the crystal structure. However, the shear strains in the zincblende and wurtzite nanowire heterostructures can be very different. All the studied nanowire heterostructures are found to exhibit a piezoelectric field along the nanowire axis. The piezoelectric field is in general much stronger in a wurtzite nanowire heterostructure than in its corresponding zincblende heterostructure. Our results are expected to be particularly important for analyzing and understanding the properties of epitaxially grown nanowire heterostructures and for applications in nanowire electronics, optoelectronics, and biochemical sensing.

  19. Field effect and charge injection in hybrid nanorod heterostructure

    NASA Astrophysics Data System (ADS)

    Kwok, H. L.; Li, Weicong

    2012-05-01

    Recent studies on organic/inorganic heterostructures have indicated that interface morphology plays an important role in determining the charge transport properties. Hybrid heterostructure light-emitting diodes mixing donor and acceptor semiconductors appear to offer the best opportunity in achieving superior performance and there are indications that a network of percolated heterojunctions can be very effective in promoting light absorption/emission. Charge transport however can be more complex in a nanorod heterostructure as the charge flow at the interface will depend on the injection mechanism(s) as well as the interface field strength. In this work, we examined the current density-voltage characteristics of the hybrid NPB (N, N‧-di(napth-2-yl)-N-N‧-diphenylbenzidine)-ZnO nanorod heterostructure and attempted to identify the transport mechanism(s) close to the tips of the nanorods. Our study indicated that charge flow essentially followed the conventional pattern changing from a linear regime (emission-limited) to a quadratic regime (space-charge limited) and possibly to a rapid rise in current (trap-free injection). Detailed evaluation of the changes in the reported conductivity data further suggested the conduction mechanism (up to a p-layer thickness of 400 nm) was dominated by space-charge limited current in the NPB layer, which also resulted in substantial charge pile-up near the tips of the nanorods. An interface charge layer responsible for the barrier height modification effect could be used to explain the observed “blue-shift” in the emission spectra of the nanorod heterostructure light-emitting diode as reported by Sun et al. [2].

  20. Magnetoelectric Coupling in Composite Multiferroic Heterostructures

    NASA Astrophysics Data System (ADS)

    Hoffman, Jason

    In this work, we demonstrate a large charge-mediated magnetoelectric coupling in a PbZr0.2Ti0.8O3 / La0.8 Sr0.2MnO3 (PZT/LSMO) composite structure resulting from direct control of magnetism via charge carrier density. This approach has the advantage that its physical mechanism is transparent and the size of the effect can be quantified and understood qualitatively within the double-exchange model. Direct quantification of the charge-driven magnetic changes based on electronic, magnetic, and spectroscopic measurements show that both the spin state and spin configuration of LSMO are modulated. Using a combination of advanced physical vapor deposition techniques, we have grown epitaxial PZT/LSMO bilayer heterostructures on (001) SrTiO 3 substrates with excellent crystallinity, atomically smooth surfaces, low leakage current density, and abrupt interfaces. Magneto-optic Kerr effect (MOKE) magnetometry was used to directly interrogate the local magnetic state of the LSMO as a function of the PZT polarization state. We show direct control of magnetism via applied electric fields, including modulation of the magnetotransport behavior and magnetic-ordering temperature, on/off switching of magnetism, and hysteretic magnetization versus electric field (M-E) characteristics. The magnetoelectric coupling strength, which relates the change in magnetization to the applied electric field, is found to vary strongly with temperature, reaching a low temperature saturation value of +6 Oe cm / kV, much larger than observed in single-phase magnetoelectrics and too large to be explained by a simple band-filling model. To clarify the origin of the magnetoelectric coupling, we carried out near edge x-ray absorption measurements that revealed a well defined change in the position of the Mn absorption edge with the ferroelectric polarization, giving a direct measure of the change in Mn valency in LSMO. We explain these results in terms of an interfacial magnetic reconstruction, whereby the

  1. Photodetectors based on heterostructures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nabet, Bahram; Cola, Adriano; Cataldo, Andrea; Chen, Xiying; Quaranta, Fabio

    2002-09-01

    In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and

  2. Silicon Germanium Strained Layers and Heterostructures

    NASA Astrophysics Data System (ADS)

    Willander, M.; Nur, O.; Jain, S. C.

    2004-01-01

    The integration of strained-Si1 xGex into Si technology has enhanced the performance and extended the functionality of Si based circuits. The improvement of device performance is observed in both AC as well as DC characteristics of these devices. The category of such devices includes field effect as well as bipolar families. Speed performance in some based circuits has reached limits previously dominated by III-V heterostructures based devices. In addition, for some optoelectronics applications including photodetectors it is now possible to easily integrate strained-Si1 xGex based optical devices into standard Silicon technology. The impact of integrating strained and relaxed Si1 xGex alloys into Si technology is important. It has lead to stimulate Si research as well as offers easy options for performances that requires very complicated and costly process if pure Si has to be used. In this paper we start by discussing the strain and stability of Si1 xGex alloys. The origin and the process responsible for transient enhanced diffusion (TED) in highly doped Si containing layers will be mentioned. Due to the importance of TED for thin highly doped Boron strained-Si1 xGex layers and its degrading consequences, possible suppression design methods will be presented. Quantum well pchannel MOSFETs (QW-PMOSFETs) based on thin buried QW are solution to the low speed and weak current derivability. Different aspects of designing these devices for a better performance are briefly reviewed. Other FETs based on tensile strained Si on relaxed Si1 xGex for n-channel and modulation doped field effect transistors (MODFETs) showed excellent performance. Record AC performance well above 200GHz for fmax is already observed and this record is expected to increase in the coming years. Heterojunction bipolar transistors (HPTs) with thin strained-Si1 xGex highly doped base have lead to optimize the performance of the bipolar technology for many applications easily. The strategies of design

  3. Synthesis, characterization and photovoltaic integration of type II nanorod heterostructures

    NASA Astrophysics Data System (ADS)

    McDaniel, Hunter Y.

    Motivated by a desire to control the actions of charges within materials in new and productive ways, researchers have increasingly focused their efforts on engineering materials on the nanometer scale where the laws of quantum mechanics rule supreme. Novel properties emerge when a semiconductor crystal is prepared at sizes below the hydrogenic ground state of the material, also known as the exciton Bohr radius. In addition to effects of quantum confinement, the large fraction of surface atoms can play a significant role in determining nanocrystal properties and applications. By combining two or more nanometer scale semiconductor crystals together to form a nanocrystal heterostructure, new avenues for materials engineering are opened up as nascent properties emerge. The high fraction of surface atoms means that much larger degrees of strain are possible than in the bulk. The large fraction of interface atoms means that the heterojunction properties can dominate the properties of the entire structure. Along with engineering these novel multi component properties comes new unexplored areas of science to be investigated and understood. New techniques are needed for studying these materials that require resolution of features much smaller than the wavelength of (visible) light. Along with this research comes a responsibility to share findings with the scientific community and to pursue directions that can positively impact humanity. At the same time, we should take a long term view when judging the applications of this or any new technology as we are only beginning to understand what is possible. After an introduction to the field in chapter one where we motivate our focus on anisotropic nanocrystal heterostructures, we discuss the formation of Fe3O4/CdS structures from spherical seeds in chapter two. In chapter three we turn our focus to type II CdSe/CdTe nanorod heterostructures where the anisotropy is inherent. The type II system is of particular interest because

  4. Metamorphic InAsSb/AlInAsSb Heterostructures for Optoelectronic Applications

    DTIC Science & Technology

    2013-03-20

    REPORT Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Metamorphic ...TELEPHONE NUMBER Gregory Belenky 631-632-8397 3. DATES COVERED (From - To) Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 - Metamorphic InAsSb...AlInAsSb heterostructures for optoelectronic applications Report Title ABSTRACT Metamorphic heterostructures containing bulk InAs1?xSbx layers and

  5. Molecular enhancement of ferromagnetism in GaAs /GaMnAs heterostructures

    NASA Astrophysics Data System (ADS)

    Carmeli, Itai; Bloom, Francisco; Gwinn, E. G.; Kreutz, T. C.; Scoby, Cheyne; Gossard, A. C.; Ray, S. G.; Naaman, Ron

    2006-09-01

    The authors investigate effects of chemisorption of polar organic molecules onto ferromagnetic GaAs /GaMnAs heterostructures. The chemisorbed heterostructures exhibit striking anisotropic enhancement of the magnetization, while GaAs substrates that are physisorbed with the same molecules show no change in magnetic properties. Thus the enhanced magnetism of the chemisorbed heterostructures reflects changes in spin alignment that arise from surface bonding of the organic monolayer.

  6. Characteristics of lateral and hybrid heterostructures based on monolayer MoS2: a computational study.

    PubMed

    Feng, Li-Ping; Su, Jie; Liu, Zheng-Tang

    2017-02-08

    Novel MoS2/(MX2)n lateral and (MoS2)/(MX2)n-BN hybrid heterostructures have been designed on monolayer MoS2 to extend its applications. The electronic, interfacial and optical properties of the lateral and hybrid heterostructures have been investigated comparatively using first-principles calculations. It was found that the charge distributions, band gaps, band levels, electrostatic potentials, and optical absorption of the MoS2/(MX2)n lateral heterostructures depend greatly on the width n of MX2, irrespective of the size of the lateral heterostructures. The CBM states of the MoS2/(MX2)n lateral heterostructures dominated by the dz(2) orbitals are localized around MoS2, whereas the VBM states of the MoS2/(MX2)n lateral heterostructures are dominated by the MX2 region. Through regulating the width n of the MX2 region in the MoS2/(MX2)n lateral heterostructures, the optical absorption of the lateral heterostructures under visible light can be increased, and the CBM and VBM states of the lateral heterostructures can be located above the hydrogen reduction potential and below the water oxidation potential, respectively. The similar characteristics were observed in the MoS2/(MX2)n-BN hybrid heterostructures, indicating that BN is a good substrate for the MoS2/(MX2)n lateral heterostructures. The analysis implies that forming the lateral and hybrid heterostructures is an effective way to extend the applications of monolayer MoS2 in photocatalytic water and photovoltaic devices.

  7. Thermal and Electrical Transport in Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Ravichandran, Jayakanth

    This dissertation presents a study of thermal and electrical transport phenomena in heterostructures of transition metal oxides, with specific interest in understanding and tailoring thermoelectricity in these systems. Thermoelectric energy conversion is a promising method for waste heat recovery and the efficiency of such an engine is directly related to a material dependent figure of merit, Z, given as S2sigma/kappa, where S is thermopower and sigma and kappa are electrical and thermal conductivity respectively. Achieving large figure of merit has been hampered by the coupling between these three thermoelectric coefficients, and the primary aim of this study is to understand the nature of thermoelectricity in complex oxides and identify mechanisms which can allow tuning of one or more thermoelectric coefficients in a favorable manner. Unlike the heavily studied conventional thermoelectric semiconductors, transition metals based complex oxides show conduction band characteristics dominated by d-bands, with much larger effective masses and varying degrees of electron correlations. These systems provide for exotic thermoelectric effects which are typically not explained by conventional theories and hence provide an ideal platform for exploring the limits of thermoelectricity. Meanwhile, oxides are composed of earth abundant elements and have excellent high temperature stability, thus providing compelling technological possibilities for thermoelectrics based power generation. In this dissertation, we address specific aspects of thermoelectricity in model complex oxide systems such as perovskite titanates and layered cobaltates to understand thermal and thermoelectric behavior and explore the tunability of thermoelectricity in these systems. The demonstration of band engineering as a viable method to tune physical properties of materials is explored. The model system used for this case is strontium titanate, where two dopants such as La on the Sr-site and oxygen

  8. Synthesis and applications of heterostructured semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Khon, Elena

    Semiconductor nanocrystals (NCs) have been of great interest to researchers for several decades due to their unique optoelectronic properties. These nanoparticles are widely used for a variety of different applications. However, there are many unresolved issues that lower the efficiency and/or stability of devices which incorporate these NCs. Our research is dedicated to addressing these issues by identifying potential problems and resolving them, improving existing systems, generating new synthetic strategies, and/or building new devices. The general strategies for the synthesis of different nanocrystals were established in this work, one of which is the colloidal growth of gold domains onto CdS semiconductor nanocrystals. Control of shape and size was achieved simply by adjusting the temperature and the time of the reaction. Depending on the exact morphology of Au and CdS domains, fabricated nano-composites can undergo evaporation-induced self-assembly onto a substrate, which is very useful for building devices. CdS/Au heterostructures can assemble in two different ways: through end-to-end coupling of Au domains, resulting in the formation of one-dimensional chains; and via side-by-side packing of CdS nanorods, leading to the onset of two-dimensional superlattices. We investigated the nature of exciton-plasmon interactions in Au-tipped CdS nanorods using femtosecond transient absorption spectroscopy. The study demonstrated that the key optoelectronic properties of electrically coupled metal and semiconductor domains are significantly different from those observed in systems with weak inter-domain coupling. In particular, strongly-coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton carrier excitations. Colloidal QDs are starting to replace organic molecules in many different applications, such as organic light emmiting diods (OLEDs), due to their

  9. In-plane heterostructures of Sb/Bi with high carrier mobility

    NASA Astrophysics Data System (ADS)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  10. Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Peipei; Shang, Dashan; Shen, Jianxin; Chai, Yisheng; Yang, Chuansen; Zhai, Kun; Cong, Junzhuang; Shen, Shipeng; Sun, Young

    2016-12-01

    Transtance change random access memory (TCRAM) is a type of nonvolatile memory based on the nonlinear magnetoelectric coupling effects of multiferroics. In this work, ferroelectric P(VDF-TrFE) thin films were prepared on Metglas foil substrates by the sol-gel technique to form multiferroic heterostructures. The magnetoelectric voltage coefficient of the heterostructure can be switched reproducibly to different levels between positive and negative values by applying selective electric-field pulses. Compared with bulk multiferroic heterostructures, the polarization switching voltage was reduced to 7 V. Our facile technological approach enables this organic magnetoelectric heterostructure as a promising candidate for the applications in multilevel TCRAM devices.

  11. The stability and the electronic structure of ultrathin Bi/Bi2Se3 heterostructure

    NASA Astrophysics Data System (ADS)

    Liu, X.; Du, X.; Huang, G. Q.

    2016-12-01

    The stability and the electronic structure of ultrathin Bi/Bi2Se3 heterostructure are studied from density-functional theory by including spin-orbit coupling. Our calculations show that the thinnest and dynamically stable heterostructure is one bilayer Bi deposited on Bi2Se3 with the thickness of two quintuple layers. Due to charge transfer and the strong hybridize effect at the interface, the band structure of ultrathin heterostructure make a large change, but the Dirac-like surface states persist. Our findings propose the possibility to engineer heterostructure to obtain ultrathin topological materials.

  12. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    SciTech Connect

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K.; Kumar, Ashok

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  13. In-plane heterostructures of Sb/Bi with high carrier mobility.

    PubMed

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-23

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (∼4000 cm(2) V(-1) s(-1)). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  14. Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure

    NASA Astrophysics Data System (ADS)

    Nagler, Philipp; Plechinger, Gerd; Ballottin, Mariana V.; Mitioglu, Anatolie; Meier, Sebastian; Paradiso, Nicola; Strunk, Christoph; Chernikov, Alexey; Christianen, Peter C. M.; Schüller, Christian; Korn, Tobias

    2017-06-01

    In heterostructures consisting of different transition-metal dichalcogenide monolayers, a staggered band alignment can occur, leading to rapid charge separation of optically generated electron-hole pairs into opposite monolayers. These spatially separated electron-hole pairs are Coulomb-coupled and form interlayer excitons. Here, we study these interlayer excitons in a heterostructure consisting of MoSe2 and WSe2 monolayers using photoluminescence spectroscopy. We observe a non-trivial temperature dependence of the linewidth and the peak energy of the interlayer exciton, including an unusually strong initial redshift of the transition with temperature, as well as a pronounced blueshift of the emission energy with increasing excitation power. By combining these observations with time-resolved photoluminescence measurements, we are able to explain the observed behavior as a combination of interlayer exciton diffusion and dipolar, repulsive exciton-exciton interaction.

  15. Intersubband relaxation of two-dimensional electrons in heterostructures

    NASA Astrophysics Data System (ADS)

    Fal'ko, Vladimir I.

    1993-05-01

    We calculate the lifetime of a nonequilibrium electron in the first excited subband in the low-density heterostructure where this photocreated carrier occurs at the last stage of its cooling. The electron interaction with acoustic phonons gives the dominant intersubband relaxation mechanism, if the intersubband energy splitting and the Fermi energy splitting are relatively small, 1>ɛF/Δ10>0.7-0.8. In GaAs-AlxGa1-xAs heterostructures the intersubband relaxation determines the excited-electron lifetime to be of the order of τphon~nanoseconds, which depends slightly on the value of the two-dimensional electron density. When the ratio ɛF/Δ10 is smaller, the intersubband relaxation is determined by the Auger-like electron-electron scattering whose rate can increase up to the value τ-1Aug~10-10 sec-1.

  16. Optoelectronics based on 2D TMDs and heterostructures

    NASA Astrophysics Data System (ADS)

    Huo, Nengjie; Yang, Yujue; Li, Jingbo

    2017-03-01

    2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.

  17. Band structure engineering in topological insulator based heterostructures.

    PubMed

    Menshchikova, T V; Otrokov, M M; Tsirkin, S S; Samorokov, D A; Bebneva, V V; Ernst, A; Kuznetsov, V M; Chulkov, E V

    2013-01-01

    The ability to engineer an electronic band structure of topological insulators would allow the production of topological materials with tailor-made properties. Using ab initio calculations, we show a promising way to control the conducting surface state in topological insulator based heterostructures representing an insulator ultrathin films on the topological insulator substrates. Because of a specific relation between work functions and band gaps of the topological insulator substrate and the insulator ultrathin film overlayer, a sizable shift of the Dirac point occurs resulting in a significant increase in the number of the topological surface state charge carriers as compared to that of the substrate itself. Such an effect can also be realized by applying the external electric field that allows a gradual tuning of the topological surface state. A simultaneous use of both approaches makes it possible to obtain a topological insulator based heterostructure with a highly tunable topological surface state.

  18. High ionic conductivity in confined bismuth oxide-based heterostructures

    NASA Astrophysics Data System (ADS)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens; Pryds, Nini

    2016-12-01

    Bismuth trioxide in the cubic fluorite phase ( δ - Bi 2 O 3 ) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ - Bi 2 O 3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ - Bi 2 O 3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [ δ - Bi 2 O 3 / YSZ ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ - Bi 2 O 3 , which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  19. Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures

    NASA Astrophysics Data System (ADS)

    He, Qing Lin; Kou, Xufeng; Grutter, Alexander J.; Yin, Gen; Pan, Lei; Che, Xiaoyu; Liu, Yuxiang; Nie, Tianxiao; Zhang, Bin; Disseler, Steven M.; Kirby, Brian J.; Ratcliff, William, II; Shao, Qiming; Murata, Koichi; Zhu, Xiaodan; Yu, Guoqiang; Fan, Yabin; Montazeri, Mohammad; Han, Xiaodong; Borchers, Julie A.; Wang, Kang L.

    2017-01-01

    Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures exhibiting Néel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of magnetic topological insulators. Proximity effects are shown to induce an interfacial spin texture modulation and establish an effective long-range exchange coupling mediated by antiferromagnetism, which significantly enhances the magnetic ordering temperature in the superlattice. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.

  20. Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures.

    PubMed

    He, Qing Lin; Kou, Xufeng; Grutter, Alexander J; Yin, Gen; Pan, Lei; Che, Xiaoyu; Liu, Yuxiang; Nie, Tianxiao; Zhang, Bin; Disseler, Steven M; Kirby, Brian J; Ratcliff Ii, William; Shao, Qiming; Murata, Koichi; Zhu, Xiaodan; Yu, Guoqiang; Fan, Yabin; Montazeri, Mohammad; Han, Xiaodong; Borchers, Julie A; Wang, Kang L

    2017-01-01

    Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures exhibiting Néel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of magnetic topological insulators. Proximity effects are shown to induce an interfacial spin texture modulation and establish an effective long-range exchange coupling mediated by antiferromagnetism, which significantly enhances the magnetic ordering temperature in the superlattice. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.

  1. Fluorescent nanowire heterostructures as a versatile tool for biology applications.

    PubMed

    Adolfsson, Karl; Persson, Henrik; Wallentin, Jesper; Oredsson, Stina; Samuelson, Lars; Tegenfeldt, Jonas O; Borgström, Magnus T; Prinz, Christelle N

    2013-10-09

    Nanowires are increasingly used in biology, as sensors, as injection devices, and as model systems for toxicity studies. Currently, in situ visualization of nanowires in biological media is done using organic dyes, which are prone to photobleaching, or using microscopy methods which either yield poor resolution or require a sophisticated setup. Here we show that inherently fluorescent nanowire axial heterostructures can be used to localize and identify nanowires in cells and tissue. By synthesizing GaP-GaInP nanowire heterostructures, with nonfluorescent GaP segments and fluorescent GaInP segments, we created a barcode labeling system enabling the distinction of the nanowire morphological and chemical properties using fluorescence microscopy. The GaInP photoluminescence stability, combined with the fact that the nanowires can be coated with different materials while retaining their fluorescence, make these nanowires promising tools for biological and nanotoxicological studies.

  2. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  3. Novel heterostructured Ge nanowires based on polytype transformation.

    PubMed

    Vincent, Laetitia; Patriarche, Gilles; Hallais, Géraldine; Renard, Charles; Gardès, Cyrille; Troadec, David; Bouchier, Daniel

    2014-08-13

    We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented Ge nanowires with standard diamond structure (3C) undergo a phase transformation toward the hexagonal diamond phase referred as the 2H-allotrope. The phase transformation occurs heterogeneously on shear bands along the length of the nanowire. The structure meets the common phenomenological criteria of a martensitic phase transformation. This point is discussed to initiate an on going debate on the transformation mechanisms. The process results in unprecedented quasiperiodic heterostructures 3C/2H along the Ge nanowire. The thermal stability of those 2H domains is also studied under annealing up to 650 °C by in situ TEM.

  4. Double perovskite heterostructures: magnetism, Chern bands, and Chern insulators.

    PubMed

    Cook, Ashley M; Paramekanti, Arun

    2014-08-15

    Experiments demonstrating the controlled growth of oxide heterostructures have raised the prospect of realizing topologically nontrivial states of correlated electrons in low dimensions. Here, we study heterostructures consisting of {111} bilayers of double perovskites separated by inert band insulators. In bulk, these double perovskites have well-defined local moments interacting with itinerant electrons leading to high temperature ferromagnetism. Incorporating spin-orbit coupling in the two-dimensional honeycomb geometry of a {111} bilayer, we find a rich phase diagram with tunable ferromagnetic order, topological Chern bands, and a C=±2 Chern insulator regime. Our results are of broad relevance to oxide materials such as Sr_{2}FeMoO_{6}, Ba_{2}FeReO_{6}, and Sr_{2}CrWO_{6}.

  5. Photoresponsive memory device based on Graphene/Boron Nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Ju, Long; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    2015-03-01

    Recent technological advancements have allowed the stacking of two dimensional layered material in order to create van der Waals heterostructures (VDH), enabling the design of novel properties by exploiting the proximal interaction between layers with different electronic properties. We report the creation of an optoelectronic memory device using a Graphene/Boron Nitride (hBN) heterostructure. Using the photo-induced doping phenomenon, we are able to spatially ``write'' a doping profile on graphene and ``read'' the profile through electrical transport and local probe techniques. We then utilize defect engineering to enhance the optoelectronic response of graphene and explore the effect of defects in hBN. Our work introduces a simple device architecture to create an optoelectronic memory device and contributes towards understanding the proximal effects of hBN on Graphene.

  6. Axial Ge/Si nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Sanuel T; Daych, Shadi A

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  7. Subnanometer scale characterization of III-V-heterostructures

    SciTech Connect

    Lakner, H.

    1996-12-31

    Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic /1/ and electronic high-speed or high-frequency /2/ devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g., strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several of such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.

  8. High-speed high-efficiency photodetectors based on heterostructures

    NASA Astrophysics Data System (ADS)

    Korolkov, V. I.

    Recent advances in the development of high-speed high-efficiency heterostructure photodetectors (HPs) are reviewed. It is noted that the performance of semiconductor photodetectors has been improved by forbidden bandwidth control. Various types of HPs are examined, including modifications of heterophotodiodes and detectors with internal amplification; avalanche photodiodes; bipolar phototransistors; and planar photoresistance devices and field-effect phototransistors. These devices are compared in terms of speed and efficiency.

  9. Growth And Characterization Studies Of Advanced Infrared Heterostructures

    DTIC Science & Technology

    2015-06-30

    Research Laboratory AFRL /RVSS Space Vehicles Directorate 3550 Aberdeen Ave., SE 11. SPONSOR/MONITOR’S REPORT Kirtland AFB, NM 87117-5776 NUMBER(S... Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVSS/Christian Morath 1 cy ... AFRL -RV-PS- TR-2015-0126 AFRL -RV-PS- TR-2015-0126 GROWTH AND CHARACTERIZATION STUDIES OF ADVANCED INFRARED HETEROSTRUCTURES Sanjay Krishna

  10. Method for forming monolayer graphene-boron nitride heterostructures

    DOEpatents

    Sutter, Peter Werner; Sutter, Eli Anguelova

    2016-08-09

    A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

  11. Nanoscale elemental quantification in heterostructured SiGe nanowires

    NASA Astrophysics Data System (ADS)

    Hourani, W.; Periwal, P.; Bassani, F.; Baron, T.; Patriarche, G.; Martinez, E.

    2015-04-01

    The nanoscale chemical characterization of axial heterostructured Si1-xGex nanowires (NWs) has been performed using scanning Auger microscopy (SAM) through local spectroscopy, line-scan and depth profile measurements. Local Auger profiles are realized with sufficient lateral resolution to resolve individual nanowires. Axial and radial composition heterogeneities are highlighted. Our results confirm the phenomenon of Ge radial growth forming a Ge shell around the nanowire. Moreover, quantification is performed after verifying the absence of preferential sputtering of Si or Ge on a bulk SiGe sample. Hence, reliable results are obtained for heterostructured NW diameters higher than 100 nm. However, for smaller sizes, we have noticed that the sensitivity factors evaluated from bulk samples cannot be used because of edge effects occurring for highly topographical features and a modified contribution of backscattered electrons.The nanoscale chemical characterization of axial heterostructured Si1-xGex nanowires (NWs) has been performed using scanning Auger microscopy (SAM) through local spectroscopy, line-scan and depth profile measurements. Local Auger profiles are realized with sufficient lateral resolution to resolve individual nanowires. Axial and radial composition heterogeneities are highlighted. Our results confirm the phenomenon of Ge radial growth forming a Ge shell around the nanowire. Moreover, quantification is performed after verifying the absence of preferential sputtering of Si or Ge on a bulk SiGe sample. Hence, reliable results are obtained for heterostructured NW diameters higher than 100 nm. However, for smaller sizes, we have noticed that the sensitivity factors evaluated from bulk samples cannot be used because of edge effects occurring for highly topographical features and a modified contribution of backscattered electrons. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr07503j

  12. Strain-induced interface reconstruction in epitaxial heterostructures

    NASA Astrophysics Data System (ADS)

    Lazarides, N.; Paltoglou, V.; Maniadis, P.; Tsironis, G. P.; Panagopoulos, C.

    2011-12-01

    We investigate in the framework of Landau theory the distortion of the strain fields at the interface of two dissimilar ferroelastic oxides that undergo a structural cubic-to-tetragonal phase transition. Simple analytical solutions are derived for the dilatational and the deviatoric strains that are valid over the entire heterostructure. The solutions reveal that the dilatational strain exhibits compression close to the interface, which may in turn affect the electronic properties in that region.

  13. Topological properties and correlation effects in oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  14. Quantum Tunneling Sb-Heterostructures for Millimeter Wave Radiometry

    NASA Astrophysics Data System (ADS)

    Schulman, Joel N.

    2003-03-01

    Imaging in the millimeter wavelength range has been making rapid progress as high speed electronics increase in frequency. Applications include viewing through adverse visibility conditions (fog, smoke, dust, precipitation) and also the relative transparency of clothing (concealed-weapons-detection) and some building materials (through-the-wall-detection). Atmospheric radiometry (climate assessment and weather prediction) already depend heavily on this wavelength range. Astronomical applications include incorporation in instruments for cosmic microwave background detection. An important ingredient is a diode that "rectifies" in a special way. It must convert input power, i.e., voltage squared, into a DC voltage output -- a "square-law" detector. We have recently found that quantum tunneling through an InAs/AlSb/GaAlSb heterostructure system provides the ideal physical mechanism for this purpose.1,2 We will present our results to date, demonstrating how a close coupling of semiconductor quantum tunneling theory with electrical engineering know-how have brought an "exotic" quantum phenomon to practical and economic application. 1. "Sb-heterostructure interband backward diodes" J.N. Schulman and D.H. Chow. IEEE Electron Device Letters 21, 353-355 (2000). 2. "High-Performance Antimonide-Based Heterostructure Backward Diodes for Millimeter-wave Detection" P. Fay, J. N. Schulman, S. Thomas III, D. H. Chow, Y. K. Boegeman, and K. S. Holabird, IEEE Electron Device Letters 23, 585-587 (2002).

  15. Franckeite as a naturally occurring van der Waals heterostructure

    PubMed Central

    Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Niño, Miguel Angel; Island, Joshua O.; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S. J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J. J.; Pérez, Emilio M.; Castellanos-Gomez, Andres

    2017-01-01

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors. PMID:28194037

  16. Direct synthesis of multifunctional heterostructured magnetic nanoparticles in gas phase

    NASA Astrophysics Data System (ADS)

    Xu, Yunhao

    Most applications of the nanotechnology require the nanoscale objects to have a controllable size, narrow size distribution, and to be in an assembled form if possible. An approach to go beyond the current performance of these nanoscale objects is to combine and couple different properties into one single object, making them multifunctional. To achieve these goals, we developed a bottom-up approach engaging a sputtering-gas-condensation technique to deposit nanoparticles with controlled size, size distribution, crystallographic phase and heterostructures. This technique is compatible to micro/nanoelectronic materials and devices fabrication processes. Three-dimensional assembly of nanoparticle-crystals is demonstrated by using the technique. A model is developed to explain the detailed nucleation, growth, phase separation processes based on the classic nucleation as well as kinetic processes. To combine and couple different properties into a single nanoparticle, a new method is developed to generate different heterostructures at single-particle level directly in gas phase. Sharp and clean interfaces were formed between the different components in the single nanoparticle. The control of the diffusion in nanoscale objects opens a door for the synthesis of heterostructures with high quality interfaces and desirable phases. The model-material systems of ferromagnetic metals and alloys (Fe, Co, and FeCo), noble metals (Ag and Au) and semiconductor element (Si) were demonstrated in the work, which have great potential in biomedical, spintronics and photonics applications. Other fields such as renewable energy devices can also benefit by adopting this novel approach in different material systems.

  17. Postsynthesis of h-BN/Graphene Heterostructures Inside a STEM.

    PubMed

    Liu, Zheng; Tizei, Luiz H G; Sato, Yohei; Lin, Yung-Chang; Yeh, Chao-Hui; Chiu, Po-Wen; Terauchi, Masami; Iijima, Sumio; Suenaga, Kazu

    2016-01-13

    Combinations of 2D materials with different physical properties can form heterostructures with modified electrical, mechanical, magnetic, and optical properties. The direct observation of a lateral heterostructure synthesis is reported by epitaxial in-plane graphene growth from the step-edge of hexagonal BN (h-BN) within a scanning transmission electron microscope chamber. Residual hydrocarbon in the chamber is the carbon source. The growth interface between h-BN and graphene is atomically identified as largely N-C bonds. This postgrowth method can form graphene nanoribbons connecting two h-BN domains with different twisting angles, as well as isolated carbon islands with arbitrary shapes embedded in the h-BN layer. The electronic properties of the vertically stacked h-BN/graphene heterostructures are investigated by electron energy-loss spectroscopy (EELS). Low-loss EELS analysis of the dielectric response suggests a robust coupling effect between the graphene and h-BN layers. © 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Mixed multilayered vertical heterostructures utilizing strained monolayer WS2.

    PubMed

    Sheng, Yuewen; Xu, Wenshuo; Wang, Xiaochen; He, Zhengyu; Rong, Youmin; Warner, Jamie H

    2016-02-07

    Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by CVD directly on Si substrates with SiO2 surface are easily washed off by water and this makes aqueous based transfer methods challenging for creating vertical stacks on the growth substrate. 2D hexagonal Boron Nitride films are used to provide an insulating layer that limits interactions with a top graphene layer and preserve the strong photoluminescence from the WS2. This transfer method is suitable for layer by layer control of 2D material vertical stacks and is shown to be possible for all CVD grown samples, which opens up pathways for the rapid large scale fabrication of vertical heterostructure systems with atomic thickness depth control and large area coverage.

  19. Evolutionary design of interfacial phase change van der Waals heterostructures.

    PubMed

    Kalikka, Janne; Zhou, Xilin; Behera, Jitendra; Nannicini, Giacomo; Simpson, Robert E

    2016-10-27

    We use an evolutionary algorithm to explore the design space of hexagonal Ge2Sb2Te5; a van der Waals layered two dimensional crystal heterostructure. The Ge2Sb2Te5 structure is more complicated than previously thought. Predominant features include layers of Ge3Sb2Te6 and Ge1Sb2Te4 two dimensional crystals that interact through Te-Te van der Waals bonds. Interestingly, (Ge/Sb)-Te-(Ge/Sb)-Te alternation is a common feature for the most stable structures of each generation's evolution. This emergent rule provides an important structural motif that must be included in the design of high performance Sb2Te3-GeTe van der Waals heterostructure superlattices with interfacial atomic switching capability. The structures predicted by the algorithm agree well with experimental measurements on highly oriented, and single crystal Ge2Sb2Te5 samples. By analysing the evolutionary algorithm optimised structures, we show that diffusive atomic switching is probable by Ge atoms undergoing a transition at the van der Waals interface from layers of Ge3Sb2Te6 to Ge1Sb2Te4 thus producing two blocks of Ge2Sb2Te5. Evolutionary methods present an efficient approach to explore the enormous multi-dimensional design parameter space of van der Waals bonded heterostructure superlattices.

  20. Franckeite as a naturally occurring van der Waals heterostructure.

    PubMed

    Molina-Mendoza, Aday J; Giovanelli, Emerson; Paz, Wendel S; Niño, Miguel Angel; Island, Joshua O; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S J; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J J; Pérez, Emilio M; Castellanos-Gomez, Andres

    2017-02-13

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors.

  1. Electronic and structural reconstruction in titanate heterostructures from first principles

    NASA Astrophysics Data System (ADS)

    Mulder, Andrew T.; Fennie, Craig J.

    2014-03-01

    Recent advances in transition metal oxide heterostructures have opened new routes to create materials with novel functionalities and properties. One direction has been to combine a Mott insulating perovskite with an electronic d1 configuration, such as LaTiO3, with a band insulating d0 perovskite, such as SrTiO3. An exciting recent development is the demonstration of interfacial conductivity in GdTiO3/SrTiO3 heterostructures that display a complex structural motif of octahedral rotations and ferromagnetic properties similar to bulk GdTiO3. In this talk we present our first principles investigation of the interplay of structural, electronic, magnetic, and orbital degrees of freedom for a wide range of d1/d0 titanate heterostructures. We find evidence for both rotation driven ferroelectricity and a symmetry breaking electronic reconstruction with a concomitant structural distortion at the interface. We argue that these materials represent an ideal platform to realize novel functionalities such as the electric field control of electronic and magnetic properties.

  2. Nanomechanical electro-optical modulator based on atomic heterostructures

    PubMed Central

    Thomas, P. A.; Marshall, O. P.; Rodriguez, F. J.; Auton, G. H.; Kravets, V. G.; Kundys, D.; Su, Y.; Grigorenko, A. N.

    2016-01-01

    Two-dimensional atomic heterostructures combined with metallic nanostructures allow one to realize strong light–matter interactions. Metallic nanostructures possess plasmonic resonances that can be modulated by graphene gating. In particular, spectrally narrow plasmon resonances potentially allow for very high graphene-enabled modulation depth. However, the modulation depths achieved with this approach have so far been low and the modulation wavelength range limited. Here we demonstrate a device in which a graphene/hexagonal boron nitride heterostructure is suspended over a gold nanostripe array. A gate voltage across these devices alters the location of the two-dimensional crystals, creating strong optical modulation of its reflection spectra at multiple wavelengths: in ultraviolet Fabry–Perot resonances, in visible and near-infrared diffraction-coupled plasmonic resonances and in the mid-infrared range of hexagonal boron nitride's upper Reststrahlen band. Devices can be extremely subwavelength in thickness and exhibit compact and truly broadband modulation of optical signals using heterostructures of two-dimensional materials. PMID:27874003

  3. Gating of high-mobility InAs metamorphic heterostructures

    SciTech Connect

    Shabani, J.; McFadden, A. P.; Shojaei, B.; Palmstrøm, C. J.

    2014-12-29

    We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

  4. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect

    Dayeh, Shadi A.; Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  5. Franckeite as a naturally occurring van der Waals heterostructure

    NASA Astrophysics Data System (ADS)

    Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Niño, Miguel Angel; Island, Joshua O.; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S. J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J. J.; Pérez, Emilio M.; Castellanos-Gomez, Andres

    2017-02-01

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors.

  6. Correlated fluorescence blinking in two-dimensional semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Xu, Weigao; Liu, Weiwei; Schmidt, Jan F.; Zhao, Weijie; Lu, Xin; Raab, Timo; Diederichs, Carole; Gao, Weibo; Seletskiy, Denis V.; Xiong, Qihua

    2016-12-01

    ‘Blinking’, or ‘fluorescence intermittency’, refers to a random switching between ‘ON’ (bright) and ‘OFF’ (dark) states of an emitter; it has been studied widely in zero-dimensional quantum dots and molecules, and scarcely in one-dimensional systems. A generally accepted mechanism for blinking in quantum dots involves random switching between neutral and charged states (or is accompanied by fluctuations in charge-carrier traps), which substantially alters the dynamics of radiative and non-radiative decay. Here, we uncover a new type of blinking effect in vertically stacked, two-dimensional semiconductor heterostructures, which consist of two distinct monolayers of transition metal dichalcogenides (TMDs) that are weakly coupled by van der Waals forces. Unlike zero-dimensional or one-dimensional systems, two-dimensional TMD heterostructures show a correlated blinking effect, comprising randomly switching bright, neutral and dark states. Fluorescence cross-correlation spectroscopy analyses show that a bright state occurring in one monolayer will simultaneously lead to a dark state in the other monolayer, owing to an intermittent interlayer carrier-transfer process. Our findings suggest that bilayer van der Waals heterostructures provide unique platforms for the study of charge-transfer dynamics and non-equilibrium-state physics, and could see application as correlated light emitters in quantum technology.

  7. Capacitance and compressibility of heterostructures with strong electronic correlations

    NASA Astrophysics Data System (ADS)

    Steffen, Kevin; Frésard, Raymond; Kopp, Thilo

    2017-01-01

    Strong electronic correlations related to a repulsive local interaction suppress the electronic compressibility in a single-band model, and the capacitance of a corresponding metallic film is directly related to its electronic compressibility. Both statements may be altered significantly when two extensions to the system are implemented which we investigate here: (i) we introduce an attractive nearest-neighbor interaction V as antagonist to the repulsive onsite repulsion U , and (ii) we consider nanostructured multilayers (heterostructures) assembled from two-dimensional layers of these systems. We determine the respective total compressibility κ and capacitance C of the heterostructures within a strong coupling evaluation, which builds on a Kotliar-Ruckenstein slave-boson technique. Whereas the capacitance C (n ) for electronic densities n close to half-filling is suppressed, illustrated by a correlation induced dip in C (n ) , it may be appreciably enhanced close to a van Hove singularity. Moreover, we show that the capacitance may be a nonmonotonic function of U close to half-filling for both attractive and repulsive V . The compressibility κ can differ from C substantially, as κ is very sensitive to internal electrostatic energies which in turn depend on the specific setup of the heterostructure. In particular, we show that a capacitor with a polar dielectric has a smaller electronic compressibility and is more stable against phase separation than a standard nonpolar capacitor with the same capacitance.

  8. Heterostructure of ferromagnetic and ferroelectric materials with magneto-optic and electro-optic effects

    NASA Technical Reports Server (NTRS)

    Zou, Yingyin Kevin (Inventor); Jiang, Hua (Inventor); Li, Kewen Kevin (Inventor); Guo, Xiaomei (Inventor)

    2012-01-01

    A heterostructure of multiferroics or magnetoelectrics (ME) was disclosed. The film has both ferromagnetic and ferroelectric properties, as well as magneto-optic (MO) and electro-optic (EO) properties. Oxide buffer layers were employed to allow grown a cracking-free heterostructure a solution coating method.

  9. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-04-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields.

  10. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    PubMed Central

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-01-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

  11. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures.

    PubMed

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; Liang, Liangbo; West, Damien; Meunier, Vincent; Zhang, Shengbai

    2016-05-10

    The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application to the MoS2/WS2 heterostructure yields good agreement with experiments, indicating near complete charge transfer within a timescale of 100 fs.

  12. Spin transport properties of partially edge-hydrogenated MoS{sub 2} nanoribbon heterostructure

    SciTech Connect

    Peng, Li; Yao, Kailun Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-06-14

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS{sub 2} nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS{sub 2} nanoribbons (ZMoS{sub 2}NR-H/ZMoS{sub 2}NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS{sub 2}NR-H and ZMoS{sub 2}NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  13. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    NASA Astrophysics Data System (ADS)

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-06-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS2 nanoribbons (ZMoS2NR-H/ZMoS2NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS2NR-H and ZMoS2NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  14. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

    PubMed Central

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; Liang, Liangbo; West, Damien; Meunier, Vincent; Zhang, Shengbai

    2016-01-01

    The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application to the MoS2/WS2 heterostructure yields good agreement with experiments, indicating near complete charge transfer within a timescale of 100 fs. PMID:27160484

  15. Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS2/graphene hetero-structures by chemical vapor depositions

    NASA Astrophysics Data System (ADS)

    Lin, Meng-Yu; Chang, Chung-En; Wang, Cheng-Hung; Su, Chen-Fung; Chen, Chi; Lee, Si-Chen; Lin, Shih-Yen

    2014-08-01

    Uniform large-size MoS2/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS2/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS2/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS2/graphene are achieved by CVD fabrication of graphene layers on top of the MoS2, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

  16. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    DOEpatents

    Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

    1993-01-01

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

  17. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    DOEpatents

    Asokakumar, P.P.V.; Lynn, K.G.

    1993-04-06

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO[sub 2]/Si, MOS or other semiconductor devices.

  18. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

    DOE PAGES

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; ...

    2016-05-10

    Here, the success of van der Waals (vdW) heterostructures, made of graphene, metal dichalcogenides, and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that vdW heterostructues can exhibit ultra-fast charge transfer despite the weak binding of the heterostructure. Using time-dependent density functional theory molecular dynamics, we identify a strong dynamic coupling between the vdW layers associated with charge transfer. This dynamic coupling results in rapid nonlinear coherentmore » charge oscillations which constitute a purely electronic phenomenon and are shown to be a general feature of vdW heterostructures provided they have a critical minimum dipole coupling. Application to MoS2/WS2 heterostructure yields good agreement with experiment, indicating near complete charge transfer within a timescale of 100 fs.The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the

  19. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

    SciTech Connect

    Wang, Han; Bang, Junhyeok; Sun, Yiyang; West, Damien; Meunier, Vincent; Zhang, Shengbai; Liang, Linagbo

    2016-05-10

    Here, the success of van der Waals (vdW) heterostructures, made of graphene, metal dichalcogenides, and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that vdW heterostructues can exhibit ultra-fast charge transfer despite the weak binding of the heterostructure. Using time-dependent density functional theory molecular dynamics, we identify a strong dynamic coupling between the vdW layers associated with charge transfer. This dynamic coupling results in rapid nonlinear coherent charge oscillations which constitute a purely electronic phenomenon and are shown to be a general feature of vdW heterostructures provided they have a critical minimum dipole coupling. Application to MoS2/WS2 heterostructure yields good agreement with experiment, indicating near complete charge transfer within a timescale of 100 fs.The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface

  20. Mixed multilayered vertical heterostructures utilizing strained monolayer WS2

    NASA Astrophysics Data System (ADS)

    Sheng, Yuewen; Xu, Wenshuo; Wang, Xiaochen; He, Zhengyu; Rong, Youmin; Warner, Jamie H.

    2016-01-01

    Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by CVD directly on Si substrates with SiO2 surface are easily washed off by water and this makes aqueous based transfer methods challenging for creating vertical stacks on the growth substrate. 2D hexagonal Boron Nitride films are used to provide an insulating layer that limits interactions with a top graphene layer and preserve the strong photoluminescence from the WS2. This transfer method is suitable for layer by layer control of 2D material vertical stacks and is shown to be possible for all CVD grown samples, which opens up pathways for the rapid large scale fabrication of vertical heterostructure systems with atomic thickness depth control and large area coverage.Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by

  1. Integration of Multifunctional Epitaxial Oxide Heterostructures with Si(001)

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John; Narayan, Jay

    Multifunctional heterostructures exhibit a wide range of functional properties, including colossal magneto-resistance, multiferroic behavior, and spin, charge, and orbital ordering. However, putting this functionality to work remains a challenge. To date, most of the previous works reported in the literature have dealt with heterostructures deposited on closely lattice matched (using lattice matching epitaxy-LME) insulating substrates such as DyScO3, NdGaO3, MgO, SrTiO3 and MBE-grown STO buffered Si(100). This presentation discusses the major advances in the integration of multifunctional oxide materials onto ubiquitous silicon semiconductor platform reported1-6 in the recent past by the presenting authors using a novel thin film growth approach, called `domain matching epitaxy'(DME), which minimizes the strain and nucleation of unwanted defects. The DME paradigm has been used across the large misfit scale (7-25%). Of particular interest, thin film heterostructures including two-phase multiferroics such as BiFeO3(BFO)/La0.7Sr0.3MnO3 (LSMO), BaTiO3(BTO)/LSMO, and LSMO/SrRuO3(SRO). These significant materials advancements may herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.1S. S. Rao,et al.,Nano Letters 13, 5814 (2013); J. Appl. Phys., 116, 094103 (2014); J. Appl. Phys., 116, 224104 (2014); J. Appl. Phys., 117, 17D908 (2015); 5J. Appl. Phys., 117, 17B711 (2015); 6Current Opinion in Solid State and Materials Science. 19, 301-304 (2015).

  2. Stimulated emission in strained-layer quantum-well heterostructures

    SciTech Connect

    Camras, M.D.; Brown, J.M.; Holonyak, N. Jr.; Nixon, M.A.; Kaliski, R.W.; Ludowise, M.J.; Dietze, W.T.; Lewis, C.R.

    1983-11-01

    Stimulated emission data are presented on a large variety of strained-layer quantum-well heterostructures (QWH's) and superlattices (SL's) grown by metalorganic chemical vapor deposition (MOCVD). These structures consist of barrier-well combinations of thickness L/sub B/,L/sub z/ < or approx. =150 A made from GaAs-InGaAs, GaAsP-GaAs, and GaAsP-InGaAs. Also employed are higher band-gap confining layers of In/sub x/Al/sub y/Ga/sub 1hyphenx/-yAs, Al/sub y/Ga/sub 1-y/As/sub 1-x/P/sub x/, and Al/sub x/Ga/sub 1-x/As. All of the heterostructures are grown on a GaAs substrate with and, in some cases, without a graded layer. The strain range between 0.2 to 12.5 x 10/sup -3/ is examined. Photopumped, these heterostructures operate as continuous (cw) 300 K lasers, with thresholds of 1.6--7.5 x 10/sup 3/ W/cm/sup 2/, for periods of time between 0.5 to >35 min. Under high-level excitation, the equivalent of J/sub eq/approx.10/sup 3/ A/cm/sup 2/, laser operation fails or is quenched by networks of dislocations (with <110> Burger's vectors) that are generated within the strained-layer region of the QWH's or SL's. These dislocation networks, which are revealed via transmission electron microscopy (TEM), occur at a more rapid rate in higher threshold samples and ones with higher built-in strain. The TEM data show, however, that no heterointerface defects (dislocations) are present in the as-grown strained-layer regions but are present in thick (bulk) graded regions.

  3. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  4. Control of Interfacial Phenomena in Artificial Oxide Heterostructures

    DTIC Science & Technology

    2015-09-01

    heterostructures using the field effect to control superconductivity, magnetism, and metal‐insulator transitions. We also identify the existence of double TiO2 ...double TiO2 layers play a crucial role in determining the superconducting states of monolayer FeSe/SrTiO3. 15. SUBJECT TERMS Thin films, conductor...development of oxide‐based electronic devices.  We also identify the existence of double  TiO2   layers at the surface of SrTiO3 in the recently

  5. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  6. Spin Dynamics of Electrons Confined in Silicon Heterostructures

    NASA Astrophysics Data System (ADS)

    Jock, Ryan Michael

    The spin states of electrons confined in silicon heterostructures have shown promise as qubits for quantum information processing. Recently, a host of single and few electron silicon quantum dot device architectures have arisen as implementations for quantum computation. These devices often combine regions of low density two-dimensional (2D) electrons, localized electrons, and interfaces depleted of electrons. Electron spin resonance (ESR) is a unique tool for probing the spin dynamics of both mobile and localized electrons at silicon heterointerfaces and investigating the effects limiting the ability to control electrons and their spin states in these structures. We use a continuous wave ESR method to examine localized 2D electron band-tail states at Si/SiO 2 interfaces in large area metal-oxide-semiconductor transistors. We compare two devices, fabricated in different laboratories, which display similar low temperature (4.2 K) peak mobilities. We find that one of the devices displays a smaller band-tail density of confined states and a shallower characteristic confinement. Thus, ESR reveals a difference in device quality, which is not apparent from mobility measurements, and is a valuable tool for evaluating the interface quality in Si/SiO2 heterostructures. Additionally, we use pulsed ESR techniques to study the spin dynamics of electrons confined in Si/SiGe heterostructures. For mobile 2D electrons, the density-dependent Dyakonov-Perel mechanism dominates spin relaxation. At low 2D densities, stronger electron-electron interactions cause an increase in the electron effective mass, leading to an increase in spin susceptibility. For very low densities, natural disorder localizes electrons at the silicon heterointerface. Naturally localized electrons in these structures display short spin relaxation times (< 0.1 ms). By electrostatically confining electrons to quantum dots, the spin relaxation time may be extended. We fabricate large-area dual-gated devices which

  7. Transport properties of Fibonacci heterostructures: a nonparabolic approach

    NASA Astrophysics Data System (ADS)

    Palomino-Ovando, M.; Cocoletzi, G. H.

    1998-07-01

    A fourth order hamiltonian is used to explore transport properties of semiconductor Fibonacci heterostructures. The tunneling current and time delay are obtained for different Fibonacci sequences constructed withGaAsandAlxGa1 - xAs. Energy minibands are calculated to study the fractal dimension and critical electronic states in quasi-periodic arrays. Results show that nonparabolic corrections produce changes in the tunneling current, time delay and fractal dimension, and a low voltage shift of the current peaks compared with the parabolic theory. The electronic states preserve their critical nature in the presence of nonparabolic effects.

  8. Transport Properties of Exfoliated BSCCO on LAO/STO Heterostructures

    NASA Astrophysics Data System (ADS)

    Ujwary, Sylvia; Sutton, Erin; Gray, Mason; Burch, Kenneth; Levy, Jeremy

    We investigate the interaction between high-temperature superconductor Bi2SrCaCu2O8+δ (BSCCO) flakes deposited on the oxide heterostructure LaAlO3/SrTiO3 (LAO/STO). Conductive-atomic force microscope (c-AFM) lithography will be used to create nanowires at the LAO/STO interface that couple to the BSCCO. Through coupling of these materials, we will be able to study phenomena such as the proximity effect and coulomb drag. We gratefully acknowledge support from the NASA PA Space Grant Consortium (SU), and the National Science Foundation (Grant No. DMR-1410846).

  9. Negative compressibility in graphene-terminated black phosphorus heterostructures

    NASA Astrophysics Data System (ADS)

    Wu, Yingying; Chen, Xiaolong; Wu, Zefei; Xu, Shuigang; Han, Tianyi; Lin, Jiangxiazi; Skinner, Brian; Cai, Yuan; He, Yuheng; Cheng, Chun; Wang, Ning

    2016-01-01

    Negative compressibility is a many-body effect wherein strong correlations give rise to an enhanced gate capacitance in two-dimensional (2D) electronic systems. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explain the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

  10. Spin-polarized photoemission from SiGe heterostructures

    SciTech Connect

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F.

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  11. Experimental investigation of interface states in photonic crystal heterostructures

    NASA Astrophysics Data System (ADS)

    Guo, Jiyong; Sun, Yong; Zhang, Yewen; Li, Hongqiang; Jiang, Haitao; Chen, Hong

    2008-08-01

    Optical Tamm states, a kind of interface modes, are also called Tamm plasmon-polaritons. They are experimentally observed in photonic heterostructures based on microstrip transmission lines. The position of optical Tamm states can be designed exactly under effective impedance match and effective phase shift match conditions. Our results show that the photonic band gaps can have the effect of negative-permittivity or negative-permeability media in constructing the interface modes. The simulations and experimental results agree with each other quite well.

  12. Dynamic Feedback in Ferromagnet-Spin Hall Metal Heterostructures

    NASA Astrophysics Data System (ADS)

    Cheng, Ran; Zhu, Jian-Gang; Xiao, Di

    2016-08-01

    In ferromagnet-normal-metal heterostructures, spin pumping and spin-transfer torques are two reciprocal processes that occur concomitantly. Their interplay introduces a dynamic feedback effect interconnecting energy dissipation channels of both magnetization and current. By solving the spin diffusion process in the presence of the spin Hall effect in the normal metal, we show that the dynamic feedback gives rise to (i) a nonlinear magnetic damping that is crucial to sustain uniform steady-state oscillations of a spin Hall oscillator at large angles and (ii) a frequency-dependent spin Hall magnetoimpedance that reduces to the spin Hall magnetoresistance in the dc limit.

  13. Multi-color imaging of magnetic Co/Pt heterostructures.

    PubMed

    Willems, Felix; von Korff Schmising, Clemens; Weder, David; Günther, Christian M; Schneider, Michael; Pfau, Bastian; Meise, Sven; Guehrs, Erik; Geilhufe, Jan; Merhe, Alaa El Din; Jal, Emmanuelle; Vodungbo, Boris; Lüning, Jan; Mahieu, Benoit; Capotondi, Flavio; Pedersoli, Emanuele; Gauthier, David; Manfredda, Michele; Eisebitt, Stefan

    2017-01-01

    We present an element specific and spatially resolved view of magnetic domains in Co/Pt heterostructures in the extreme ultraviolet spectral range. Resonant small-angle scattering and coherent imaging with Fourier-transform holography reveal nanoscale magnetic domain networks via magnetic dichroism of Co at the M2,3 edges as well as via strong dichroic signals at the O2,3 and N6,7 edges of Pt. We demonstrate for the first time simultaneous, two-color coherent imaging at a free-electron laser facility paving the way for a direct real space access to ultrafast magnetization dynamics in complex multicomponent material systems.

  14. Silicon-based silicon–germanium–tin heterostructure photonics

    PubMed Central

    Soref, Richard

    2014-01-01

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

  15. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  16. Silicon-based silicon-germanium-tin heterostructure photonics.

    PubMed

    Soref, Richard

    2014-03-28

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

  17. Thickness-dependent voltage-modulated magnetism in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Shu, Li; Li, Zheng; Ma, Jing; Gao, Ya; Gu, Lin; Shen, Yang; Lin, Yuanhua; Nan, C. W.

    2012-01-01

    The voltage-modulated magnetic behavior in multiferroic Ni/BaTiO3 heterostructures grown on SrTiO3 single crystal substrate was observed by the magneto-optical Kerr effect measurement in an AC modulation technique with synchronizing the frequency of the Kerr signal detector to the low-frequency AC actuation voltage. The results showed coexistence at room-temperature of two magnetoelectric (ME) mechanisms, i.e., strain- and interface charge-mediated couplings. The interaction between the different ME couplings leads to a remarkable thickness-dependent voltage modulation of the magnetic behavior.

  18. SWCNT-MoS2 -SWCNT Vertical Point Heterostructures.

    PubMed

    Zhang, Jin; Wei, Yang; Yao, Fengrui; Li, Dongqi; Ma, He; Lei, Peng; Fang, Hehai; Xiao, Xiaoyang; Lu, Zhixing; Yang, Juehan; Li, Jingbo; Jiao, Liying; Hu, Weida; Liu, Kaihui; Liu, Kai; Liu, Peng; Li, Qunqing; Lu, Wei; Fan, Shoushan; Jiang, Kaili

    2017-02-01

    A vertical point heterostructure (VPH) is constructed by sandwiching a two-dimensional (2D) MoS2 flake with two cross-stacked metallic single-walled carbon nanotubes. It can be used as a field-effect transistor with high on/off ratio and a light detector with high spatial resolution. Moreover, the hybrid 1D-2D-1D VPHs open up new possibilities for nanoelectronics and nano-optoelectronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Unleashing the Full Potential of Magnetoelectric Coupling in Film Heterostructures.

    PubMed

    Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Annapureddy, Venkateswarlu; Noh, Myoung-Sub; Kang, Chong-Yun; Kim, Jong-Woo; Choi, Jong-Jin; Choi, Si-Young; Chung, Sung-Yoon; Kang, Suk-Joong L; Priya, Shashank; Ryu, Jungho

    2017-03-01

    A record-high, near-theoretical intrinsic magnetoelectric (ME) coupling of 7 V cm(-1) Oe(-1) is achieved in a heterostructure of piezoelectric Pb(Zr,Ti)O3 (PZT) film deposited on magnetostrictive Metglas (FeBSi). The anchor-like, nanostructured interface between PZT and Metglas, improved crystallinity of PZT by laser annealing, and optimum volume of crystalline PZT are found to be the key factors in realizing such a giant strain-mediated ME coupling. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Upper critical field of Mo-Ni heterostructures

    SciTech Connect

    Uher, C.; Watson, W.J.; Cohn, J.L.; Schuller, I.K.

    1985-12-01

    Upper critical field and its anisotropy have been measured on two very short wavelength Mo-Ni heterostructures of different degrees of perfection, lambda = 13.8A (disordered structure) and lambda = 16.6A (layered structure). In both cases the parallel critical field has an unexpected temperature dependence, a large and temperature dependent anisotropy, and over 60% enhancement over the Clogston-Chandrasekhar limit. Data are fit to the Werthamer-Helfand-Hohenberg theory and the spin-orbit scattering times are found to be 1.79 x 10 T s and 2 x 10 T s, respectively.

  1. Multi-color imaging of magnetic Co/Pt heterostructures

    PubMed Central

    Willems, Felix; von Korff Schmising, Clemens; Weder, David; Günther, Christian M.; Schneider, Michael; Pfau, Bastian; Meise, Sven; Guehrs, Erik; Geilhufe, Jan; Merhe, Alaa El Din; Jal, Emmanuelle; Vodungbo, Boris; Lüning, Jan; Mahieu, Benoit; Capotondi, Flavio; Pedersoli, Emanuele; Gauthier, David; Manfredda, Michele; Eisebitt, Stefan

    2017-01-01

    We present an element specific and spatially resolved view of magnetic domains in Co/Pt heterostructures in the extreme ultraviolet spectral range. Resonant small-angle scattering and coherent imaging with Fourier-transform holography reveal nanoscale magnetic domain networks via magnetic dichroism of Co at the M2,3 edges as well as via strong dichroic signals at the O2,3 and N6,7 edges of Pt. We demonstrate for the first time simultaneous, two-color coherent imaging at a free-electron laser facility paving the way for a direct real space access to ultrafast magnetization dynamics in complex multicomponent material systems. PMID:28289691

  2. Interface recombination current in type II heterostructure bipolar diodes.

    PubMed

    Grundmann, Marius; Karsthof, Robert; von Wenckstern, Holger

    2014-09-10

    Wide-gap semiconductors are often unipolar and can form type II bipolar heterostructures with large band discontinuities. We present such diodes with very high rectification larger than 1 × 10(10). The current is assumed to be entirely due to interface recombination. We derive the ideality factor for both symmetric and asymmetric diodes and find it close to 2 in agreement with experimental data from NiO/ZnO and CuI/ZnO type II diodes. The comparison with experimental results shows that the actual interface recombination rate is orders of magnitude smaller than its possible maximum value.

  3. Some elementary questions in the theory of quasiperiodic heterostructures

    NASA Astrophysics Data System (ADS)

    Pérez-Álvarez, R.; García-Moliner, F.; Velasco, V. R.

    2001-04-01

    The characterization of the spectrum of eigenstates of quasiperiodic heterostructures is discussed by focusing on three questions. Arguments are advanced to justify the often indiscriminate use of different approximants in the calculation of the eigenvalue spectra. It is stressed that the calculation of the fractal dimension may be rather inaccurate if the high eigenvalue range is not included, even if physically the interest is limited to the low range. The question of self-similarity is critically examined and found to have a very limited range of validity in practice. The unique properties of the Rudin-Shapiro sequence are also stressed.

  4. Npn double heterostructure bipolar transistor with ingaasn base region

    DOEpatents

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  5. Optical properties of GaS-Ca(OH)2 bilayer heterostructure

    NASA Astrophysics Data System (ADS)

    Torun, E.; Sahin, H.; Peeters, F. M.

    2016-02-01

    Finding novel atomically thin heterostructures and understanding their characteristic properties are critical for developing better nanoscale optoelectronic devices. In this study, we investigate the electronic and optical properties of a GaS-Ca(OH)2 heterostructure using first-principle calculations. The band gap of the GaS-Ca(OH)2 heterostructure is significantly reduced when compared to those of the isolated constituent layers. Our calculations show that the GaS-Ca(OH)2 heterostructure is a type-II heterojunction which can be used to separate photoinduced charge carriers where electrons are localized in GaS and holes in the Ca(OH)2 layer. This leads to spatially indirect excitons which are important for solar energy and optoelectronic applications due to their long lifetime. By solving the Bethe-Salpeter equation on top of a single shot GW calculation (G0W0 ), the dielectric function and optical oscillator strength of the constituent monolayers and the heterostructure are obtained. The oscillator strength of the optical transition for the GaS monolayer is an order of magnitude larger than the Ca(OH)2 monolayer. We also found that the calculated optical spectra of different stacking types of the heterostructure show dissimilarities, although their electronic structures are rather similar. This prediction can be used to determine the stacking type of ultrathin heterostructures.

  6. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect

    Singh, Kirandeep; Kaur, Davinder; Singh, Sushil Kumar

    2014-09-21

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  7. Band alignment of lateral two-dimensional heterostructures with a transverse dipole

    NASA Astrophysics Data System (ADS)

    Leenaerts, O.; Vercauteren, S.; Partoens, B.

    2017-05-01

    It was recently shown that the electronic band alignment in lateral two-dimensional heterostructures is strongly dependent on the system geometry, such as heterostructure width and layer thickness. This is so even in the absence of polar edge terminations because of the appearance of an interface dipole between the two different materials. In this study, this work is expanded to include two-dimensional materials that possess an electronic dipole over their surface, i.e., in the direction transverse to the crystal plane. To this end, a heterostucture consisting of polar hydrofluorinated graphene and non-polar graphane layers is studied with first-principles calculations. As for non-polar heterostructures, a significant geometry dependence is observed with two different limits for the band offset. For infinitely wide heterostructures, the potential step in the vacuum is equally divided over the two sides of the heterostructure, resulting in a finite potential step in the heterostructure. For infinitely thick heterostructure slabs, on the other hand, the band offset is reduced, similar to the three-dimensional case.

  8. Electroresistance and field effect studies on manganite based heterostructure

    SciTech Connect

    Solanki, P. S.; Khachar, Uma; Vagadia, Megha; Ravalia, Ashish; Katba, Savan; Kuberkar, D. G.

    2015-04-14

    Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrNb{sub 0.002}Ti{sub 0.998}O{sub 3} (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (E{sub LZ}), (ii) SNTO as a control electrode (E{sub LS}), and (iii) shorted ZnO and SNTO as control electrodes (E{sub LZS}). For this, channel electric field (E{sub CH}) dependent variation in channel resistance (R{sub C}) (of manganite channel) and I-V (across manganite channel) under various control fields (E{sub C}) have been studied. Variation in barrier height (Φ{sub B}) with control field (E{sub C}) for different geometries has been discussed.

  9. Epitaxial Heterostructures of Lead Selenide Quantum Dots on Hematite Nanowires.

    PubMed

    Selinsky, Rachel S; Shin, Sanghun; Lukowski, Mark A; Jin, Song

    2012-06-21

    We present a novel method for synthesizing epitaxial quantum dot-nanowire (QD-NW) heterostructures using the example of colloidal PbSe QDs decorated on furnace-grown hematite (α-Fe2O3) NWs. The direct heterogeneous nucleation of QDs on Fe2O3 NWs relies upon an aggressive surface dehydration of the as-synthesized Fe2O3 NWs at 350 °C under vacuum and subsequent introduction of colloidal reactants resulting in direct growth of PbSe QDs on Fe2O3. The synthesis is tunable: the QD diameter distribution and density of QDs on the NWs increase with increased dehydration time, and QD diameters and size distributions decrease with decreased injection temperature of the colloidal synthesis. Transmission electron microscopy (TEM) structural analysis reveals direct heteroepitaxial heterojunctions where the matching faces can be PbSe (002) and Fe2O3 (003) with their respective [11̅0] crystallographic directions aligned. This can be a general approach for integrating colloidal and furnace synthetic techniques, thus broadening possible material combinations for future high-quality, epitaxial nanoscale heterostructures for solar applications.

  10. Thermionic Energy Conversion Based on Graphene van der Waals Heterostructures

    PubMed Central

    Liang, Shi-Jun; Liu, Bo; Hu, Wei; Zhou, Kun; Ang, L. K.

    2017-01-01

    Seeking for thermoelectric (TE) materials with high figure of merit (or ZT), which can directly converts low-grade wasted heat (400 to 500 K) into electricity, has been a big challenge. Inspired by the concept of multilayer thermionic devices, we propose and design a solid-state thermionic devices (as a power generator or a refrigerator) in using van der Waals (vdW) heterostructure sandwiched between two graphene electrodes, to achieve high energy conversion efficiency in the temperature range of 400 to 500 K. The vdW heterostructure is composed of suitable multiple layers of transition metal dichalcogenides (TMDs), such as MoS2, MoSe2, WS2 and WSe2. From our calculations, WSe2 and MoSe2 are identified as two ideal TMDs (using the reported experimental material’s properties), which can harvest waste heat at 400 K with efficiencies about 7% to 8%. To our best knowledge, this design is the first in combining the advantages of graphene electrodes and TMDs to function as a thermionic-based device. PMID:28387363

  11. Photon-Inhibited Topological Transport in Quantum Well Heterostructures.

    PubMed

    Farrell, Aaron; Pereg-Barnea, T

    2015-09-04

    Here we provide a picture of transport in quantum well heterostructures with a periodic driving field in terms of a probabilistic occupation of the topologically protected edge states in the system. This is done by generalizing methods from the field of photon-assisted tunneling. We show that the time dependent field dresses the underlying Hamiltonian of the heterostructure and splits the system into sidebands. Each of these sidebands is occupied with a certain probability which depends on the drive frequency and strength. This leads to a reduction in the topological transport signatures of the system because of the probability to absorb or emit a photon. Therefore when the voltage is tuned to the bulk gap the conductance is smaller than the expected 2e(2)/h. We refer to this as photon-inhibited topological transport. Nevertheless, the edge modes reveal their topological origin in the robustness of the edge conductance to disorder and changes in model parameters. In this work the analogy with photon-assisted tunneling allows us to interpret the calculated conductivity and explain the sum rule observed by Kundu and Seradjeh.

  12. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy.

    PubMed

    Müller, Knut; Rosenauer, Andreas; Schowalter, Marco; Zweck, Josef; Fritz, Rafael; Volz, Kerstin

    2012-10-01

    This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of (circular) pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very different as one is based on edge detection, one on rotational averages, and one on cross correlation with masks, it is found that identical strain profiles result for an In x Ga1-x N y As1-y /GaAs heterostructure consisting of five compressively and tensile strained layers. We achieve a precision of strain measurements of 7-9·10-4 and a spatial resolution of 0.5-0.7 nm over the whole width of the layer stack which was 350 nm. Being already very applicable to strain measurements in contemporary nanostructures, we additionally suggest future hardware and software designs optimized for fast and direct acquisition of strain distributions, motivated by the present studies.

  13. Semiconductor-oxide heterostructured nanowires using postgrowth oxidation.

    PubMed

    Wallentin, Jesper; Ek, Martin; Vainorious, Neimantas; Mergenthaler, Kilian; Samuelson, Lars; Pistol, Mats-Erik; Reine Wallenberg, L; Borgström, Magnus T

    2013-01-01

    Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into amorphous aluminum oxide segments, leaving isolated InP segments in an oxide matrix. InP quantum dots formed on the nanowire sidewalls exhibit room temperature photoluminescence with small line widths (down to 15 meV) and high intensity. This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature.

  14. Identifying interfacial charge transfer states in organic heterostructures (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Arndt, Andreas P.; Gerhard, Marina; Howard, Ian A.; Koch, Martin; Lemmer, Ulrich

    2016-09-01

    Charge transfer (CT) states play evidently an important role at the interface of organic heterostructures but their identification and characterization is often experimentally less obvious and challenging. We studied two exemplary material systems which both represented a benchmark within the research of organic photovoltaics at their time: the homopolymer P3HT blended with PC61BM and the copolymer PTB7 blended with PC71BM. In both heterostructures, we could identify a distinct CT state emission by the use of NIR time-resolved photoluminescence (PL) [1], [2]. The selectivity of this technique enables us to clearly probe the energetics and dynamics of weak emitting interfacial states and therefore to prove differences in the CT state characteristics between the two systems. We went beyond this previous work and investigated the time and temperature dependent emission anisotropy as well as the electric field dependence of the time-resolved PL for both blends and the pristine polymers, respectively. In both cases the CT state emission clearly deviates from the one of the primarily excited singlet excitons: the emission anisotropy reveals an additional relaxation pathway for the exciton which is connected with a change of the transition dipole moment of the emission, and under applied bias different quenching thresholds can give access to varying binding energies of the emissive excitons involved. Finally, we think that our findings demonstrate how interfacial CT state emission can be clearly identified as such and how it can be unambiguously distinguished from singlet exciton emission.

  15. Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

    NASA Astrophysics Data System (ADS)

    Völkl, Tobias; Rockinger, Tobias; Drienovsky, Martin; Watanabe, Kenji; Taniguchi, Takashi; Weiss, Dieter; Eroms, Jonathan

    2017-09-01

    We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene /WSe2/SiO2 samples we observe mobilities of ˜12 000 cm2V-1s-1 . Magnetic-field-dependent resistance measurements on these samples show a peak in the conductivity at low magnetic fields. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hexagonal boron nitride show a much higher mobility of up to ˜120 000 cm2V-1s-1 . However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic fields a resistance peak appears, which we ascribe to a size effect due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors due to complete lifting of the spin and valley degeneracies.

  16. Fractal quantum well heterostructures for broadband light emitters

    SciTech Connect

    Crawford, M.H.; Gourley, P.L.; Meissner, K.E.; Sinclair, M.B.; Jones, E.D.; Chow, W.W.; Schneider, R.P. Jr.

    1994-12-31

    We examine carrier relaxation and radiative recombination in AlGaAs based near IR and AlGaInP based visible fractal quantum well heterostructures. Through temperature dependent photoluminescence, we demonstrate that enhanced population of higher lying energy levels can be achieved by varying the thickness of the layers in the fractal heterostructurd. This distribution of carriers results in room temperature emission over a relatively broad range of wavelengths: approximately 700--855 nm for AlGaAs structures and 575--650 nm for AlGaInP structures. Spectra are compared to theoretical calculations to evaluate the non-equilibrium nature of the carrier distributions. Time resolved photoluminescence measurements demonstrate an approximately linear relationship between the radiative decay time and the layer thickness of the structure. Correspondingly, integrated luminescence measurements at room temperature reveal a factor of four increase in the light output efficiency of the structure as the fractal layer thickness is increased from 50 {angstrom} to 400 {angstrom}. The applicability of these heterostructures to broadband LEDs is discussed.

  17. Electric-field control of magnetism in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Zhao, Yonggang; Zhang, Sen; Li, Peisen; Chen, Aitian; Li, Dalai; Yang, Lifeng; Rizwan, S.; Liu, Y.; Xiao, Xia; Wu, Yizheng; Jin, Xiaofeng; Han, Xiufeng; Zhang, Huiyun; Zhu, Meihong

    2015-03-01

    We have studied electric-field control of magnetism in different multiferroic heterostructures, composed of ferromagnetic (FM) and ferroelectric (FE) materials such as Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) and magnetic tunnel junctions (MTJ) on PMN-PT, etc. A giant electric-field control of magnetization as well as magnetic anisotropy was observed in a CoFeB/PMN-PT structure at room temperature with a maximum relative magnetization change up to 83 percent and a 90° rotation of the easy axis. In MTJ of CoFeB/AlOx/CoFeB grown on PMN-PT, we demonstrate a reversible, continuous magnetization rotation and manipulation of tunneling magnetoresistance at room temperature by electric fields without the assistance of a magnetic field. These results show the interesting new physics and potential applications of the FM/FE multiferroic heterostructures.

  18. Multiferroic properties of artificially designed Perovskite-Spinel Heterostructures

    NASA Astrophysics Data System (ADS)

    Dussan, Sandra; Singh, Manoj K.; Katiyar, Ram S.

    2009-03-01

    Multiferroics materials are a class of functional material that combines two or more ordered parameters i.e. ferromagnetic, ferroelectric and ferroelastic. The recent finding of multiferroic composite material with the coexistence of these properties has attracted the attention of various researchers due to its potential applications in highly sensitive sensors and actuators as well as multistate memory devices. We synthesized and characterizatied CoFe2O4-BiFeO3 (CFO-BFO) heterostructure thin films grown on SrTiO3 (111), (100) substrates using Pulsed laser deposition. The XRD patterns of CFO-BFO multilayered films evidenced that all picks correspond to CFO and BFO structure also confirmed by their respective Raman spectra. We observed three peaks at 136, 168, and 215 cm-1 that can be assigned to A1(TO) modes of the BFO pure phase and at 468 and 695 cm-1 correspond to CFO. Room temperature M-H exhibited well-shaped magnetization hysteresis loops, good saturation and high coercivity. Preliminary results evidenced the existence of ferroelectricity and magnetic properties in heterostructure.

  19. Electroresistance and field effect studies on manganite based heterostructure

    NASA Astrophysics Data System (ADS)

    Solanki, P. S.; Khachar, Uma; Vagadia, Megha; Ravalia, Ashish; Katba, Savan; Kuberkar, D. G.

    2015-04-01

    Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La0.7Sr0.3MnO3/SrNb0.002Ti0.998O3 (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (ELZ), (ii) SNTO as a control electrode (ELS), and (iii) shorted ZnO and SNTO as control electrodes (ELZS). For this, channel electric field (ECH) dependent variation in channel resistance (RC) (of manganite channel) and I-V (across manganite channel) under various control fields (EC) have been studied. Variation in barrier height (ΦB) with control field (EC) for different geometries has been discussed.

  20. Interface driven states in ferromagnetic topological insulator heterostructures

    NASA Astrophysics Data System (ADS)

    Lauter, Valeria; Katmis, Ferhat; Moodera, Jagadeesh

    The broken time reversal symmetry (TRS) states can be introduced into a topological insulator (TI) material by ferromagnetic ordering at the interface. Recently we demonstrated a fundamental step towards realization of high temperature magnetization in Bi2Se3-EuS TI-FMI heterostructures through observation of magnetic proximity-induced symmetry breaking on the Bi2Se3 surface via the exchange interaction by depositing EuS film on the top of the Bi2Se3 surface.Here we show that we can independently break the TRS on both surfaces of a TI, which brings the long-range induced magnetism on either or both surfaces of a TI in a controlled way. We provide a depth-sensitive data on details of magnetic proximity effect in hidden interfaces by Polarized Neutron Reflectometry. The proximity coupling strength and penetration depth of magnetism into TI are extracted as functions of temperature, magnetic field and magnetic history. The large neutron absorption of Eu atoms serves as the element sensitivity and enables us to identify such magnetism in TI as proximity magnetism. This provides a next step to realization of complex heterostructures of TI and FMI leading to wide applications in TI-based next generation spintronic devices. Supported by U.S. DOE, Office of Science, BES, MIT MRSEC award DMR-0819762, NSF Grant DMR-1207469, ONR Grant N00014-13-1-0301, NSF Grant DMR-1231319.

  1. Searching for two-dimensional Weyl superconductors in heterostructures

    NASA Astrophysics Data System (ADS)

    Hao, Lei; Ting, C. S.

    2017-02-01

    The two-dimensional Weyl superconductor is the most elusive member of a group of materials with Weyl fermions as low-energy excitations. Here, we propose to realize this state in a heterostructure consisting of thin films of half-metal and spin-singlet superconductors. In particular, for the d -wave case, a very robust two-dimensional Weyl superconductor (d WSC) is realized independently of the orientation of the spontaneous magnetization of the half metal. The quasiparticle spectra of the d WSC show interesting evolution with the direction of the magnetization, featured by a series of Lifshitz transitions in the zero-energy contour of the quasiparticle spectrum. In addition, we find a transition between type-I and type-II Weyl nodes. This is an example of a two-dimensional type-II Weyl node in the presence of a superconducting correlation. For a general magnetization orientation of the half metal, the state is a combination of a superconducting component and a normal fluid component and is different from all known forms of pairings. The symmetries and topological properties of the system are analyzed. We also study the phases in the heterostructure with the half metal replaced by a ferromagnetic metal with a partially spin-polarized Fermi surface.

  2. Infrared photodetectors based on graphene van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Ryzhii, V.; Ryzhii, M.; Svintsov, D.; Leiman, V.; Mitin, V.; Shur, M. S.; Otsuji, T.

    2017-08-01

    We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors.

  3. Resonant photonic States in coupled heterostructure photonic crystal waveguides.

    PubMed

    Cox, Jd; Sabarinathan, J; Singh, Mr

    2010-02-09

    In this paper, we study the photonic resonance states and transmission spectra of coupled waveguides made from heterostructure photonic crystals. We consider photonic crystal waveguides made from three photonic crystals A, B and C, where the waveguide heterostructure is denoted as B/A/C/A/B. Due to the band structure engineering, light is confined within crystal A, which thus act as waveguides. Here, photonic crystal C is taken as a nonlinear photonic crystal, which has a band gap that may be modified by applying a pump laser. We have found that the number of bound states within the waveguides depends on the width and well depth of photonic crystal A. It has also been found that when both waveguides are far away from each other, the energies of bound photons in each of the waveguides are degenerate. However, when they are brought close to each other, the degeneracy of the bound states is removed due to the coupling between them, which causes these states to split into pairs. We have also investigated the effect of the pump field on photonic crystal C. We have shown that by applying a pump field, the system may be switched between a double waveguide to a single waveguide, which effectively turns on or off the coupling between degenerate states. This reveals interesting results that can be applied to develop new types of nanophotonic devices such as nano-switches and nano-transistors.

  4. Thermionic Energy Conversion Based on Graphene van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Liang, Shi-Jun; Liu, Bo; Hu, Wei; Zhou, Kun; Ang, L. K.

    2017-04-01

    Seeking for thermoelectric (TE) materials with high figure of merit (or ZT), which can directly converts low-grade wasted heat (400 to 500 K) into electricity, has been a big challenge. Inspired by the concept of multilayer thermionic devices, we propose and design a solid-state thermionic devices (as a power generator or a refrigerator) in using van der Waals (vdW) heterostructure sandwiched between two graphene electrodes, to achieve high energy conversion efficiency in the temperature range of 400 to 500 K. The vdW heterostructure is composed of suitable multiple layers of transition metal dichalcogenides (TMDs), such as MoS2, MoSe2, WS2 and WSe2. From our calculations, WSe2 and MoSe2 are identified as two ideal TMDs (using the reported experimental material’s properties), which can harvest waste heat at 400 K with efficiencies about 7% to 8%. To our best knowledge, this design is the first in combining the advantages of graphene electrodes and TMDs to function as a thermionic-based device.

  5. Resonant Photonic States in Coupled Heterostructure Photonic Crystal Waveguides

    PubMed Central

    2010-01-01

    In this paper, we study the photonic resonance states and transmission spectra of coupled waveguides made from heterostructure photonic crystals. We consider photonic crystal waveguides made from three photonic crystals A, B and C, where the waveguide heterostructure is denoted as B/A/C/A/B. Due to the band structure engineering, light is confined within crystal A, which thus act as waveguides. Here, photonic crystal C is taken as a nonlinear photonic crystal, which has a band gap that may be modified by applying a pump laser. We have found that the number of bound states within the waveguides depends on the width and well depth of photonic crystal A. It has also been found that when both waveguides are far away from each other, the energies of bound photons in each of the waveguides are degenerate. However, when they are brought close to each other, the degeneracy of the bound states is removed due to the coupling between them, which causes these states to split into pairs. We have also investigated the effect of the pump field on photonic crystal C. We have shown that by applying a pump field, the system may be switched between a double waveguide to a single waveguide, which effectively turns on or off the coupling between degenerate states. This reveals interesting results that can be applied to develop new types of nanophotonic devices such as nano-switches and nano-transistors. PMID:20672066

  6. Ag/ZnO heterostructure nanocrystals: synthesis, characterization, and photocatalysis.

    PubMed

    Zheng, Yuanhui; Zheng, Lirong; Zhan, Yingying; Lin, Xingyi; Zheng, Qi; Wei, Kemei

    2007-08-20

    A high yield of the dimer-type heterostructure of Ag/ZnO nanocrystals with different Ag contents is successfully prepared through a simple solvothermal method in the absence of surfactants. The samples are characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, UV-vis spectroscopy, and IR spectroscopy. The results show that all samples are composed of metallic Ag and ZnO; Ag nanoparticles locate on the surface of ZnO nanorods; the binding energy of Ag 3d(5/2) for the Ag/ZnO sample with a Ag content of 5.0 atom % shifts remarkably to the lower binding energy compared with the corresponding value of pure metallic Ag because of the interaction between Ag and ZnO nanocrystals; the concentration of oxygen vacancy for the as-synthesized samples varies with the increasing Ag content, and the Ag/ZnO sample with a Ag content of 5.0 atom % has the largest density of oxygen vacancy. In addition, the relationship between their structure and photocatalytic property is investigated in detail. It is found that the photocatalytic property is closely related to its structure, such as heterostructure, oxygen defect, and crystallinity. The presence of metallic Ag nanoparticles and oxygen vacancy on the surface of ZnO nanorods promotes the separation of photogenerated electron-hole pairs and thus enhances the photocatalytic activity.

  7. Robust 2D topological insulators in van der Waals heterostructures.

    PubMed

    Kou, Liangzhi; Wu, Shu-Chun; Felser, Claudia; Frauenheim, Thomas; Chen, Changfeng; Yan, Binghai

    2014-10-28

    We predict a family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X = Cl, Br, and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity-induced topological states. First-principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z2 index and an explicit demonstration of metallic edge states. Such heterostructures offer a unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers ideas for innovative device designs.

  8. Engineering quantum spin Hall insulators by strained-layer heterostructures

    NASA Astrophysics Data System (ADS)

    Akiho, T.; Couëdo, F.; Irie, H.; Suzuki, K.; Onomitsu, K.; Muraki, K.

    2016-11-01

    Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band structures and have been proposed as a platform for exploring spintronics applications and exotic quasiparticles related to the spin-helical edge modes. Despite theoretical proposals for various materials, however, experimental demonstrations of QSHIs have so far been limited to two systems—HgTe/CdTe and InAs/GaSb—both of which are lattice-matched semiconductor heterostructures. Here, we report transport measurements in yet another realization of a band-inverted heterostructure as a QSHI candidate—InAs/InxGa1-xSb with lattice mismatch. We show that the compressive strain in the InxGa1-xSb layer enhances the band overlap and energy gap. Consequently, high bulk resistivity, two orders of magnitude higher than for InAs/GaSb, is obtained deep in the band-inverted regime. The strain also enhances bulk Rashba spin-orbit splitting, leading to an unusual situation where the Fermi level crosses only one spin branch for electronlike and holelike bands over a wide density range. These properties make this system a promising platform for robust QSHIs with unique spin properties and demonstrate the strain to be an important ingredient for tuning spin-orbit interaction.

  9. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  10. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    SciTech Connect

    Chen, Wei; Wang, Fei; Fang, Jingyue; Wang, Guang; Qin, Shiqiao; Zhang, Xue-Ao E-mail: xazhang@nudt.edu.cn; Wang, Chaocheng; Wang, Li E-mail: xazhang@nudt.edu.cn

    2015-01-12

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  11. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Wang, Fei; Qin, Shiqiao; Fang, Jingyue; Wang, Chaocheng; Wang, Guang; Wang, Li; Zhang, Xue-Ao

    2015-01-01

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  12. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    SciTech Connect

    Xia, Congxin Xue, Bin; Wang, Tianxing; Peng, Yuting; Jia, Yu

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  13. Growth control, structure and ferromagnetic properties of digital Mn/GaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Guo, X. X.; Herrmann, C.; Kong, X.; Kolovos-Vellianitis, D.; Däweritz, L.; Ploog, K. H.

    2005-05-01

    The growth of digital Mn/GaAs heterostructures with high Mn sheet densities has been studied at widely varied As4 pressures by in situ RHEED monitoring and microstructure characterization using TEM. In particular for heterostructures with a large number of periods, the evolution of the specular RHEED beam intensity can be advantageously used for growth control. Analysis of the influence of the Mn density and As4 pressure on the ferromagnetic properties of the heterostructures suggests a correlation with intrinsic defects in the Mn sheets as well as in the GaAs spacers. Stacking faults are found to be the dominant growth defect.

  14. Superlubricity of two-dimensional fluorographene/MoS2 heterostructure: a first-principles study.

    PubMed

    Wang, Lin-Feng; Ma, Tian-Bao; Hu, Yuan-Zhong; Zheng, Quanshui; Wang, Hui; Luo, Jianbin

    2014-09-26

    The atomic-scale friction of the fluorographene (FG)/MoS2 heterostructure is investigated using first-principles calculations. Due to the intrinsic lattice mismatch and formation of periodic Moiré patterns, the potential energy surface of the FG/MoS2 heterostructure is ultrasmooth and the interlayer shear strength is reduced by nearly two orders of magnitude, compared with both FG/FG and MoS2/MoS2 bilayers, entering the superlubricity regime. The size dependency of superlubricity is revealed as being based on the relationship between the emergence of Moiré patterns and the lattice mismatch ratio for heterostructures.

  15. Superlubricity of two-dimensional fluorographene/MoS2 heterostructure: a first-principles study

    NASA Astrophysics Data System (ADS)

    Wang, Lin-Feng; Ma, Tian-Bao; Hu, Yuan-Zhong; Zheng, Quanshui; Wang, Hui; Luo, Jianbin

    2014-09-01

    The atomic-scale friction of the fluorographene (FG)/MoS2 heterostructure is investigated using first-principles calculations. Due to the intrinsic lattice mismatch and formation of periodic Moiré patterns, the potential energy surface of the FG/MoS2 heterostructure is ultrasmooth and the interlayer shear strength is reduced by nearly two orders of magnitude, compared with both FG/FG and MoS2/MoS2 bilayers, entering the superlubricity regime. The size dependency of superlubricity is revealed as being based on the relationship between the emergence of Moiré patterns and the lattice mismatch ratio for heterostructures.

  16. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    SciTech Connect

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-06-15

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N{sub 2}-rich (O{sub 2}-lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: {yields} Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. {yields} Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. {yields} CNTs in heterostructures decompose between 600 and 750 deg. C in N{sub 2}-rich atmosphere. {yields} Metallic species in heterostructures were oxidized at higher temperatures.

  17. ZnO@CdS Core-Shell Heterostructures: Fabrication, Enhanced Photocatalytic, and Photoelectrochemical Performance.

    PubMed

    Ding, Meng; Yao, Nannan; Wang, Chenggang; Huang, Jinzhao; Shao, Minghui; Zhang, Shouwei; Li, Ping; Deng, Xiaolong; Xu, Xijin

    2016-12-01

    ZnO nanorods and ZnO@CdS heterostructures have been fabricated on carbon fiber cloth substrates via hydrothermal and electrochemical deposition. Their photocatalytic properties were investigated by measuring the degradation of methylene blue under ultraviolet light irradiation. The result illustrated that the photodegradation efficiency of ZnO@CdS heterostructures was better than that of pure ZnO nanorods, in which the rate constants were about 0.04629 and 0.02617 min(-1). Furthermore, the photocurrent of ZnO@CdS heterostructures achieved 10(2) times enhancement than pure ZnO nanorods, indicating that more free carriers could be generated and transferred in ZnO@CdS heterostructures, which could be responsible for the increased photocatalytic performance.

  18. Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures

    NASA Astrophysics Data System (ADS)

    Taylor, M. D.; Wetsel, G. C., Jr.; McBride, S. E.; Brown, R. C.; Frensley, W. R.; Seabaugh, A. C.; Kao, Y.-C.; Beam, E. A.

    1995-06-01

    We report experimental and theoretical evidence for electrostatic lateral confinement induced by a nanoprobe. The lateral confinement is manifest as oscillations of the differential conductance of a near-surface resonant-tunneling heterostructure in air at room temperature.

  19. Graphene/MoS(2) heterostructures for ultrasensitive detection of DNA hybridisation.

    PubMed

    Loan, Phan Thi Kim; Zhang, Wenjing; Lin, Cheng-Te; Wei, Kung-Hwa; Li, Lain-Jong; Chen, Chang-Hsiao

    2014-07-23

    The photoluminescence signals of a graphene/MoS2 heterostructural stacking film are sensitive to environmental charges, which allows the single-base sequence-selective detection of DNA hybridization with sensitivity to the level of aM.

  20. Understanding the synergistic effect of WO3-BiVO4 heterostructures by impedance spectroscopy.

    PubMed

    Shi, Xinjian; Herraiz-Cardona, Isaac; Bertoluzzi, Luca; Lopez-Varo, Pilar; Bisquert, Juan; Park, Jong Hyeok; Gimenez, Sixto

    2016-04-07

    WO3-BiVO4 n-n heterostructures have demonstrated remarkable performance in photoelectrochemical water splitting due to the synergistic effect between the individual components. Although the enhanced functional capabilities of this system have been widely reported, in-depth mechanistic studies explaining the carrier dynamics of this heterostructure are limited. The main goal is to provide rational design strategies for further optimization as well as to extend these strategies to different candidate systems for solar fuel production. In the present study, we perform systematic optoelectronic and photoelectrochemical characterization to understand the carrier dynamics of the system and develop a simple physical model to highlight the importance of the selective contacts to minimize bulk recombination in this heterostructure. Our results collectively indicate that while BiVO4 is responsible for the enhanced optical properties, WO3 controls the transport properties of the heterostructured WO3-BiVO4 system, leading to reduced bulk recombination.

  1. Detection of microwave phase variation in nanometre-scale magnetic heterostructures.

    PubMed

    Bailey, W E; Cheng, C; Knut, R; Karis, O; Auffret, S; Zohar, S; Keavney, D; Warnicke, P; Lee, J-S; Arena, D A

    2013-01-01

    The internal phase profile of electromagnetic radiation determines many functional properties of metal, oxide or semiconductor heterostructures. In magnetic heterostructures, emerging spin electronic phenomena depend strongly upon the phase profile of the magnetic field H at gigahertz frequencies. Here we demonstrate nanometre-scale, layer-resolved detection of electromagnetic phase through the radio frequency magnetic field H(rf) in magnetic heterostructures. Time-resolved X-ray magnetic circular dichroism reveals the local phase of the radio frequency magnetic field acting on individual magnetizations M(i) through the susceptibility as M = χH(rf). An unexpectedly large phase variation, ~40°, is detected across spin-valve trilayers driven at 3 GHz. The results have implications for the identification of novel effects in spintronics and suggest general possibilities for electromagnetic-phase profile measurement in heterostructures.

  2. Nanofocusing of hybrid plasmons-phonons-polaritons in a graphene-hexagonal boron nitride heterostructure.

    PubMed

    Zhu, Bofeng; Ren, Guobin; Wu, Beilei; Gao, Yixiao; Li, Haisu; Jian, Shuisheng

    2016-10-01

    In this Letter, we investigate the nanofocusing of hybrid plasmons-phonons-polaritons (SPP-HPhPs) in a graphene-hexagonal boron nitride (h-BN) heterostructure with a graphene coating on a tapered h-BN slab. Compared with the hyperbolic phonon polariton (HPhP) in h-BN, the hybrid SPP-HPhP in a heterostructure exhibits much smaller losses, which is validated through both analytical and numerical methods. Furthermore, the thickness dependent dispersions of a hybrid SPP-HPhP enable the tapered heterostructure to achieve a function of focusing electromagnetic waves. Compared with the tapered h-BN slab, the field enhancement in a tapered heterostructure is improved evidently with a maximum enhancement of the amplitude of normalized electric field over 60. This nanofocusing scheme may have potential in applications such as nonlinear optics.

  3. Design and Optimization of Omnidirectional Band Gap for One-Dimensional Periodic and Quasiperiodic Phononic Heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Zhao-Jiang

    2015-01-01

    A new kind of one-dimensional multilayer phononic heterostructure is constructed to obtain a broad acoustic omnidirectional reflection (ODR) band. The heterostructure is formed by combining finite periodic phononic crystals (PnCs) and Fibonacci (or Thue—Morse) quasiperiodic PnCs. From the numerical results performed by the transfer matrix method, it is found that the ODR bands can be enlarged obviously by using the combination of periodic and quasi-periodic PnCs. Moreover, an application of particle swarm optimization in designing and optimizing acoustic ODR bands is reported. With regards to different thickness ratios and periodic numbers in the heterostructure, we give some optimization examples and finally achieve phononic heterostructure with a very broad ODR bandwidth. The result provides a new approach to achieve broad acoustic ODR bandwidth, and will be applied in design of omnidirectional acoustic mirrors.

  4. TOPICAL REVIEW Ionic conductivity in oxide heterostructures: the role of interfaces

    NASA Astrophysics Data System (ADS)

    Fabbri, Emiliana; Pergolesi, Daniele; Traversa, Enrico

    2010-10-01

    Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  5. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    PubMed Central

    Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

    2016-01-01

    Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

  6. InAlN/AlN/GaN heterostructures for high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Usov, S. O.; Sakharov, A. V.; Tsatsulnikov, A. F.; Lundin, V. W.; Zavarin, E. E.; Nikolaev, A. E.; Yagovkina, M. A.; Zemlyakov, V. E.; Egorkin, V. I.; Ustinov, V. M.

    2016-08-01

    The results of development of InAlN/AlN/GaN heterostructures, grown on sapphire substrates by metal-organic chemical vapour deposition, and high electron mobility transistors (HEMTs) based on them are presented. The dependencies of the InAlN/AlN/GaN heterostructure properties on epitaxial growth conditions were investigated. The optimal indium content and InAlN barrier layer thicknesses of the heterostructures for HEMT s were determined. The possibility to improve the characteristics of HEMTs by in-situ passivation by Si3N4 thin protective layer deposited in the same epitaxial process was demonstrated. The InAlN/AlN/GaN heterostructure grown on sapphire substrate with diameter of 100 mm were obtained with sufficiently uniform distribution of sheet resistance. The HEMTs with saturation current of 1600 mA/mm and transconductance of 230 mS/mm are demonstrated.

  7. Electron transfer and coupling in graphene-tungsten disulfide van der Waals heterostructures.

    PubMed

    He, Jiaqi; Kumar, Nardeep; Bellus, Matthew Z; Chiu, Hsin-Ying; He, Dawei; Wang, Yongsheng; Zhao, Hui

    2014-11-25

    The newly discovered two-dimensional materials can be used to form atomically thin and sharp van der Waals heterostructures with nearly perfect interface qualities, which can transform the science and technology of semiconductor heterostructures. Owing to the weak van der Waals interlayer coupling, the electronic states of participating materials remain largely unchanged. Hence, emergent properties of these structures rely on two key elements: electron transfer across the interface and interlayer coupling. Here we show, using graphene-tungsten disulfide heterostructures as an example, evidence of ultrafast and highly efficient interlayer electron transfer and strong interlayer coupling and control. We find that photocarriers injected in tungsten disulfide transfer to graphene in 1 ps and with near-unity efficiency. We also demonstrate that optical properties of tungsten disulfide can be effectively tuned by carriers in graphene. These findings illustrate basic processes required for using van der Waals heterostructures in electronics and photonics.

  8. State diagnostics of RTD based on nanoscale multilayered AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu

    2016-08-01

    In the present work the problems of technical diagnostics of RTD based on nanoscale multilayered AlGaAs heterostructures are being solved. The technique and the algorithms of RTD functionality region developing are being considered.

  9. Cyclical thinning of black phosphorus with high spatial resolution for heterostructure devices.

    PubMed

    Robbins, Matthew C; Namgung, Seon; Oh, Sang-Hyun; Koester, Steven J

    2017-03-13

    A high-spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al2O3 which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first ever lateral heterostructure BP MOSFET in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an on-to-off current ratio improvement of 1000× compared to homojunction MOSFETs.

  10. Transport Properties of Crystallographically Aligned Heterostructures of Graphene and Hexagonal Boron Nitride

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Cheng, Bin; Miao, Tengfei; Martynov, Oleg; Bockrath, Marc

    2014-03-01

    Graphene and hexagonal boron nitride (hBN) heterostructures have been heavily studied due to graphene's high electronic mobility in this system. Hexagonal BN also shows possibilities to alter graphene's electronic properties. Recently several research groups have demonstrated accurate placement of graphene on hBN with crystallographic alignment. Due to the resulting superlattice formed in the graphene/hBN heterostructures, an energy gap, secondary Dirac Points, and Hofstadter quantization in a magnetic field have been observed. However, many aspects of the electronic properties of graphene/hBN heterostructures remain unexplored. Using aligned layer transfer we are able to produce graphene/hBN heterostructures with 1 degree alignment accuracy, and measure the transport properties of the resulting systems. We will discuss our latest transport data, which contribute towards a greater understanding the electron motion in the graphene/hBN interface.

  11. Flexible Sm-Fe/polyvinylidene fluoride heterostructural film with large magnetoelectric voltage output

    NASA Astrophysics Data System (ADS)

    Zhao, Shifeng; Wan, Jian-guo; Yao, Mengliang; Liu, Jun-ming; Song, Fengqi; Wang, Guanghou

    2010-11-01

    The Sm-Fe/polyvinylidene fluoride (PVDF) heterostructural film was prepared by depositing Sm-Fe nanoclusters onto the flexible PVDF film using cluster beam deposition method. The PVDF film acts as both piezoelectric layer and substrate. The heterostructural film showed the well-defined microstructures in which the Sm-Fe layer was assembled by the nanoparticles, and the interface between Sm-Fe and PVDF layers was clear. The heterostructural film possessed evident magnetic anisotropy with in-plane easy axis and exhibited large voltage output under the magnetic bias. Such flexible heterostructural film with large magnetoelectric output makes it promising to be widely used for the weak magnetic-field detection.

  12. Fabrication of colloidal photonic crystal heterostructures free of interface imperfection based on solvent vapor annealing.

    PubMed

    Liu, Xiaomiao; Zhao, Duobiao; Geng, Chong; Zhang, Lijing; Tan, Tianya; Hu, Mingzhe; Yan, Qingfeng

    2014-11-15

    We describe the transformation of a colloidal photonic crystal into a photonic crystal heterostructure. It was achieved by annealing a polystyrene multilayer colloidal photonic crystal partially immersed in water using a solvent vapor. The floating polystyrene colloidal photonic crystal was divided into two parts by the liquid level, which can be manipulated by the addition of ethanol into the water. The top part protruding out of the water experienced a uniform lattice stretching upon exposure to the solvent vapor. The bottom part that stayed immersed in the water remained unaffected due to the protection by the water. The inconsistent behaviors of the two parts resulted in the formation of a colloidal photonic crystal heterostructure. Such a heterostructure was free of interface imperfection since it was a direct descendant of the original colloidal crystal. Meanwhile, optical measurements demonstrated the presence of a wider photonic band gap along the crystallographic [111] direction in these photonic crystal heterostructures compared with the original colloidal photonic crystals.

  13. Heterostructured ZnO/SnO(2-x) nanoparticles for efficient photocatalytic hydrogen production.

    PubMed

    Li, Mingyang; Hu, Yue; Xie, Shilei; Huang, Yongchao; Tong, Yexiang; Lu, Xihong

    2014-04-28

    Heterostructured ZnO/SnO(2-x) nanoparticles (NPs) were synthesized by a facile two-step hydrothermal process for the first time and exhibited excellent photocatalytic activity due to increased oxygen vacancies and matched band edge alignment.

  14. Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures

    SciTech Connect

    Yadav, S. K. E-mail: yadav.satyesh@gmail.com; Sharma, V.; Ramprasad, R.

    2015-07-07

    Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0–1.5 eV) is accessible across the heterostructures in a controllable manner via reasonable levels of epitaxial strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe heterostructures may thus be viewed as a powerful degree of freedom that can enable the rational design of optoelectronic devices.

  15. Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching

    NASA Astrophysics Data System (ADS)

    Özçelik, V. Ongun; Azadani, Javad G.; Yang, Ce; Koester, Steven J.; Low, Tony

    2016-07-01

    We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II, and III heterostructures, an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center, i.e., Γ valley. Our study, which includes the group IV and III-V compound monolayer materials, group V elemental monolayer materials, transition-metal dichalcogenides, and transition-metal trichalcogenides, reveals that almost half of these materials have conduction and/or valence band edges residing at the zone center. Using first-principles density functional calculations, we present the type of the heterostructure for 903 different possible combinations of these 2D materials which establishes a periodic table of heterostructures.

  16. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Samuel T; Dayeh, Shadi A

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  17. Probing interlayer interactions in WS2 -graphene van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Chung, Ting Fung; Yuan, Long; Huang, Libai; Chen, Yong P.

    Two-dimensional crystals based van der Waals coupled heterostructures are of interest owing to their potential applications for flexible and transparent electronics and optoelectronics. The interaction between the 2D layered crystals at the interfaces of these heterostructures is crucial in determining the overall performance and is strongly affected by contamination and interfacial strain. We have fabricated heterostructures consisting of atomically thin exfoliated WS2 and chemical-vapor-deposited (CVD) graphene, and studied the interaction and coupling between the WS2 and graphene using atomic force microscopy (AFM), Raman spectroscopy and femtosecond transient absorption measurement (TAM). Information from Raman-active phonon modes allows us to estimate charge doping in graphene and interfacial strain on the crystals. Spatial imaging probed by TAM can be correlated to the heterostructure surface morphology measured by AFM and Raman maps of graphene and WS2, showing how the interlayer coupling alters exciton decay dynamics quantitatively.

  18. Electronic Properties of Heterostructures and Defects in Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Collins, Reuben Theodore

    This thesis deals with the electronic characteristics of semiconductor heterostructures and with the electrical properties of semiconductors which are used in the growth of heterostructures. Chapter 1 presents the background for the two techniques primarily used in the research described in this thesis: inelastic tunneling spectroscopy and deep -level transient spectroscopy. Chapter 2 describes electrical measurements which were made on heterostructures composed of the compound semiconductors AlAs and GaAs. The mechanisms for current transport perpendicular to one or more AlAs layers sandwiched between two degenerate GaAs layers were studied, with an emphasis on elastic and inelastic tunneling through the AlAs layers at low temperatures. Measurements on metalorganic chemical vapor deposition grown samples with a single, p-type AlAs barrier indicated that thermionic emission was the dominant mechanism for current transport over the barrier at room temperature. At low temperatures, leakage currents dominated if the AlAs layer was thicker, while tunneling currents were dominant in the samples with thinner AlAs barriers. Electron self-energy effects due to the coupling of electrons and optical phonons in the GaAs, and the inelastic-excitation of longitudinal optical phonons in the AlAs were observed in the low temperature tunneling currents. This was the first observation of these effects in the AlAs/GaAs system. There was a significant difference between samples with n-type or p-type AlAs barriers. A possible explanation for these differences based on band bending in the AlAs barriers is given. Negative resistance regions were observed in the I-V curves of samples with multiple AlAs layers, indicating the presence of resonant tunneling effects. Chapter 3 presents an investigation of the deep -level defect structure of the compound semiconductor CdTe using the technique of deep-level transient spectroscopy. Nominally undoped, Cu-doped and In-doped CdTe crystals were

  19. Scanning probe microscopy investigation of complex-oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Bi, Feng

    Advances in the growth of precisely tailored complex-oxide heterostructures have led to new emergent behavior and associated discoveries. One of the most successful examples consists of an ultrathin layer of LaAlO 3 (LAO) deposited on TiO2-terminated SrTiO3 (STO), where a high mobility quasi-two dimensional electron liquid (2DEL) is formed at the interface. Such 2DEL demonstrates a variety of novel properties, including field tunable metal-insulator transition, superconductivity, strong spin-orbit coupling, magnetic and ferroelectric like behavior. Particularly, for 3-unit-cell (3 u.c.) LAO/STO heterostructures, it was demonstrated that a conductive atomic force microscope (c-AFM) tip can be used to "write" or "erase" nanoscale conducting channels at the interface, making LAO/STO a highly flexible platform to fabricate novel nanoelectronics. This thesis is focused on scanning probe microscopy studies of LAO/STO properties. We investigate the mechanism of c-AFM lithography over 3 u.c. LAO/STO in controlled ambient conditions by using a vacuum AFM, and find that the water molecules dissociated on the LAO surface play a critical role during the c-AFM lithography process. We also perform electro-mechanical response measurements over top-gated LAO/STO devices. Simultaneous piezoresponse force microscopy (PFM) and capacitance measurements reveal a correlation between LAO lattice distortion and interfacial carrier density, which suggests that PFM could not only serve as a powerful tool to map the carrier density at the interface but also provide insight into previously reported frequency dependence of capacitance enhancement of top-gated LAO/STO structures. To study magnetism at the LAO/STO interface, magnetic force microscopy (MFM) and magnetoelectric force microscopy (MeFM) are carried out to search for magnetic signatures that depend on the carrier density at the interface. Results demonstrate an electronicallycontrolled ferromagnetic phase on top-gated LAO

  20. High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures.

    PubMed

    Mudd, Garry W; Svatek, Simon A; Hague, Lee; Makarovsky, Oleg; Kudrynskyi, Zakhar R; Mellor, Christopher J; Beton, Peter H; Eaves, Laurence; Novoselov, Kostya S; Kovalyuk, Zakhar D; Vdovin, Evgeny E; Marsden, Alex J; Wilson, Neil R; Patanè, Amalia

    2015-07-01

    High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures is achieved by exploiting the broad-band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near-infrared to the visible spectrum.

  1. Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes

    NASA Astrophysics Data System (ADS)

    Reklaitis, A.

    2008-09-01

    Frequency multipliers based on the single-barrier and double-barrier InN/GaN heterostructure varactor diodes are suggested. The DC and large-signal AC vertical electron transport in the InN/GaN diodes are investigated by ensemble Monte Carlo simulations. It is found that InN/GaN heterostructure-barrier varactor diodes are able to operate as efficient frequency multipliers in the frequency range up to 1 THz.

  2. Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

    NASA Astrophysics Data System (ADS)

    Lutsev, L. V.; Pavlov, V. V.; Usachev, P. A.; Astretsov, A. A.; Stognij, A. I.; Novitskii, N. N.

    2012-12-01

    Negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in the avalanche regime. Light with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap. This suppresses the avalanche feedback and causes a reduction of the current flowing through the SiO2(Co)/GaAs heterostructure.

  3. Interface engineering for ternary blend polymer solar cells with a heterostructured near-IR dye.

    PubMed

    Xu, Huajun; Ohkita, Hideo; Tamai, Yasunari; Benten, Hiroaki; Ito, Shinzaburo

    2015-10-21

    Ternary-blend polymer solar cells can be effectively improved by incorporating a heterostructured near-IR dye, which has a hexyl group compatible with the polymer and a benzyl group compatible with the fullerene. Because of the compatibility with both materials, the heterostructured dye can be loaded up to 15 wt% and hence can boost the photocurrent generation by 30%. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Raman and Photoluminescence Mapping of Lattice Matched InGaP/GaAs Heterostructures

    DTIC Science & Technology

    2002-01-01

    GaAs substrates have potential applications for electronic devices, e.g. high efficiency tandem solar cells , single heterojunction bipolar transistors... InGaP /GaAs Heterostructures DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the following report: TITLE: Progress...2002 Materials Research Society H2.11 RAMAN AND PHOTOLUMINESCENCE MAPPING OF LATTICE MATCHED InGaP /GaAs HETEROSTRUCTURES G. Attolini, P.Fallini

  5. Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes.

    PubMed

    Reklaitis, A

    2008-09-24

    Frequency multipliers based on the single-barrier and double-barrier InN/GaN heterostructure varactor diodes are suggested. The DC and large-signal AC vertical electron transport in the InN/GaN diodes are investigated by ensemble Monte Carlo simulations. It is found that InN/GaN heterostructure-barrier varactor diodes are able to operate as efficient frequency multipliers in the frequency range up to 1 THz.

  6. Heterostructure of Au nanocluster tipping on a ZnS quantum rod: controlled synthesis and novel luminescence

    NASA Astrophysics Data System (ADS)

    Tian, Yang; Wang, Ligang; Yu, Shanshan; Zhou, Weiwei

    2015-08-01

    Heterostructures of metal nanoparticles and semiconductors are widely studied for their unique properties. However, few reports are available on the heterostructure of metal nanoclusters and semiconductors. In the present study, a heterostructure, in which gold nanoclusters selectively locate at ZnS quantum rod (QR) tips, was fabricated using a two-step solvothermal route. The composition, intrinsic crystallography, and junction of the prepared heterostructure were thoroughly investigated, and it was observed to exhibit novel luminescent behaviours. By comparison with the individual components of ZnS QRs and gold clusters, the resultant heterostructure shows an enhanced exciton emission and complete depression of defect emission for the ZnS component, and a pronounced red emission for the gold nanocluster component. The mechanism of these properties and the charge transfer between gold nanoclusters and ZnS QRs were also explored. The size and location of gold in the heterostructure were also controlled during synthesis to study their effects on the luminescence.

  7. Biaxial compressive strain engineering in graphene/boron nitride heterostructures.

    PubMed

    Pan, Wei; Xiao, Jianliang; Zhu, Junwei; Yu, Chenxi; Zhang, Gang; Ni, Zhenhua; Watanabe, K; Taniguchi, T; Shi, Yi; Wang, Xinran

    2012-01-01

    Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time.

  8. Quantum anomalous Hall effect in magnetic insulator heterostructure.

    PubMed

    Xu, Gang; Wang, Jing; Felser, Claudia; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2015-03-11

    On the basis of ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we predict that 3D quantum anomalous Hall insulator could be realized in (Bi2/3Cr1/3)2Te3 /GdI2 superlattice.

  9. 3D calcite heterostructures for dynamic and deformable mineralized matrices

    DOE PAGES

    Yi, Jaeseok; Wang, Yucai; Jiang, Yuanwen; ...

    2017-09-11

    Scales are rooted in soft tissues, and are regenerated by specialized cells. The realization of dynamic synthetic analogues with inorganic materials has been a significant challenge, because the abiological regeneration sites that could yield deterministic growth behavior are hard to form. Here we overcome this fundamental hurdle by constructing a mutable and deformable array of three-dimensional calcite heterostructures that are partially locked in silicone. Individual calcite crystals exhibit asymmetrical dumbbell shapes and are prepared by a parallel tectonic approach under ambient conditions. Furthermore, the silicone matrix immobilizes the epitaxial nucleation sites through self-templated cavities, which enables symmetry breaking in reactionmore » dynamics and scalable manipulation of the mineral ensembles. With this platform, we devise several mineral-enabled dynamic surfaces and interfaces. For example, we show that the induced growth of minerals yields localized inorganic adhesion for biological tissue and reversible focal encapsulation for sensitive components in flexible electronics.« less

  10. Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures

    PubMed Central

    Pan, Wei; Xiao, Jianliang; Zhu, Junwei; Yu, Chenxi; Zhang, Gang; Ni, Zhenhua; Watanabe, K.; Taniguchi, T.; Shi, Yi; Wang, Xinran

    2012-01-01

    Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time. PMID:23189242

  11. Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

    SciTech Connect

    Wang Cong; Jin Kuijuan; Zhao Ruiqiang; Lu Huibin; Guo Haizhong; Ge Chen; He Meng; Wang Can; Yang Guozhen

    2011-05-02

    One order larger photovoltage is obtained with critical thicknesses of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films in both kinds of heterostructures of La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/SrTiO{sub 3} (0.8 wt % Nb-doped) and La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La{sub 0.9}Sr{sub 0.1}MnO{sub 3} film with the ultimate value of photovoltage is just the thickness of the depletion layer of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} in both heterojunctions, respectively.

  12. Understanding thermal transport in asymmetric layer hexagonal boron nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Zhang, Jingchao; Wang, Xinyu; Hong, Yang; Xiong, Qingang; Jiang, Jin; Yue, Yanan

    2017-01-01

    In this work, thermal transport at the junction of an asymmetric layer hexagonal boron-nitride (h-BN) heterostructure is explored using a non-equilibrium molecular dynamics method. A thermal contact resistance of 3.6 × 10-11 K · m2 W-1 is characterized at a temperature of 300 K with heat flux from the trilayer to monolayer regions. The mismatch in the flexural phonon modes revealed by power spectra analysis provides the driving force for the calculated thermal resistance. A high thermal rectification efficiency of 360% is calculated at the layer junction surpassing that of graphene. Several modulators, i.e. the system temperature, contact pressure and lateral dimensions, are applied to manipulate the thermal conductance and rectification across the interfaces. The predicted thermal rectification sustains positive correlations with temperature and phonon propagation lengths with little change to the coupling strength.

  13. Rational synthesis of heterostructured nanoparticles with morphology control.

    SciTech Connect

    Wang, C.; Tian, W.; Ding, Y.; Ma, Y.-Q.; Wang, Z. L.; Markovic, N.; Stamenkovic, V.; Daimon, H.; Sun, S.; Materials Science Division; Brown Univ.; Nanjing Univ.; Georgia Inst. of Tech.; Hitachi Maxell, Ltd.

    2010-01-01

    Rational synthesis of Pt-Au{sub n} nanoparticles (NPs) has been achieved by overgrowing Au on Pt with n, the number of Pt-Au heterojunctions in each particle, controlled from 1 to 4, and the corresponding NPs in pear-, peanut-, or clover-like morphology. Monte Carlo simulation reveals that the morphology control can be correlated to a thermodynamic equilibrium of the Au coherence energy, the overall particle surface energy, and the heterogeneous Pt-Au interfacial energy in the composite system, which is manipulated by the seeding particle size and solvent polarity. The developed synthetic strategy together with the provided fundamental understanding of heterogeneous nucleation and heterostructure growth could have great potential toward the rational synthesis of composite nanomaterials with morphology control for advanced catalytic and other functional applications.

  14. The direct magnetoelectric effect in ferroelectric-ferromagnetic epitaxial heterostructures

    NASA Astrophysics Data System (ADS)

    Fina, I.; Dix, N.; Rebled, J. M.; Gemeiner, P.; Martí, X.; Peiró, F.; Dkhil, B.; Sánchez, F.; Fàbrega, L.; Fontcuberta, J.

    2013-08-01

    Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse magnetoelectric effect (CME) has been already demonstrated by electric-field poling of the ferroelectric layers and subsequent modification of the magnetic state of adjacent ferromagnetic layers by strain effects and/or free-carrier density tuning. Here we focus on the direct magnetoelectric effect (DME) where the dielectric state of a ferroelectric thin film is modified by a magnetic field. Ferroelectric BaTiO3 (BTO) and ferromagnetic CoFe2O4 (CFO) oxide thin films have been used to create epitaxial FE/FM and FM/FE heterostructures on SrTiO3(001) substrates buffered with metallic SrRuO3. It will be shown that large ferroelectric polarization and DME can be obtained by appropriate selection of the stacking order of the FE and FM films and their relative thicknesses. The dielectric permittivity, at the structural transitions of BTO, is strongly modified (up to 36%) when measurements are performed under a magnetic field. Due to the insulating nature of the ferromagnetic layer and the concomitant absence of the electric-field effect, the observed DME effect solely results from the magnetostrictive response of CFO elastically coupled to the BTO layer. These findings show that appropriate architecture and materials selection allow overcoming substrate-induced clamping in multiferroic multi-layered films.Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse magnetoelectric effect (CME) has been already demonstrated by electric-field poling of the ferroelectric layers and subsequent modification of the magnetic state of adjacent ferromagnetic layers by strain effects and/or free-carrier density tuning. Here we focus on the direct magnetoelectric effect (DME) where the dielectric state of a

  15. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    NASA Astrophysics Data System (ADS)

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-06-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC.

  16. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure.

    PubMed

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-06-27

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC.

  17. Homogenization limit for a multiband effective mass model in heterostructures

    SciTech Connect

    Morandi, O.

    2014-06-15

    We study the homogenization limit of a multiband model that describes the quantum mechanical motion of an electron in a quasi-periodic crystal. In this approach, the distance among the atoms that constitute the material (lattice parameter) is considered a small quantity. Our model include the description of materials with variable chemical composition, intergrowth compounds, and heterostructures. We derive the effective multiband evolution system in the framework of the kp approach. We study the well posedness of the mathematical problem. We compare the effective mass model with the standard kp models for uniform and non-uniforms crystals. We show that in the limit of vanishing lattice parameter, the particle density obtained by the effective mass model, converges to the exact probability density of the particle.

  18. Conduction mechanisms in silicon-polymer-metal heterostructures

    SciTech Connect

    Salikhov, R. B. Lachinov, A. N.; Rakhmeev, R. G.

    2007-10-15

    Conduction mechanisms in thin films of wide-gap polymers in silicon-based heterostructures have been experimentally studied. Measuring the temperature dependence of the current-voltage characteristics of samples in the temperature range 80-300 K was used as the basic method. Multilayer Si-SiO{sub 2}-polymer-metal structures were prepared for measurements. Films of poly(diphenylene phthalide), in which a transition from the insulating to a highly conducting state is observed, were used as polymeric layers. The results obtained were used to explain the features of the charge transport in the samples in terms of the hopping conductivity via trap levels, Schottky emission, and field-assisted tunneling emission.

  19. Analysis of energy states in modulation doped multiquantum well heterostructures

    NASA Technical Reports Server (NTRS)

    Ji, G.; Henderson, T.; Peng, C. K.; Huang, D.; Morkoc, H.

    1990-01-01

    A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

  20. Analysis of energy states in modulation doped multiquantum well heterostructures

    NASA Technical Reports Server (NTRS)

    Ji, G.; Henderson, T.; Peng, C. K.; Huang, D.; Morkoc, H.

    1990-01-01

    A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

  1. Field-effect tunneling transistor based on vertical graphene heterostructures.

    PubMed

    Britnell, L; Gorbachev, R V; Jalil, R; Belle, B D; Schedin, F; Mishchenko, A; Georgiou, T; Katsnelson, M I; Eaves, L; Morozov, S V; Peres, N M R; Leist, J; Geim, A K; Novoselov, K S; Ponomarenko, L A

    2012-02-24

    An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.

  2. Catalysis with two-dimensional materials and their heterostructures

    NASA Astrophysics Data System (ADS)

    Deng, Dehui; Novoselov, K. S.; Fu, Qiang; Zheng, Nanfeng; Tian, Zhongqun; Bao, Xinhe

    2016-03-01

    Graphene and other 2D atomic crystals are of considerable interest in catalysis because of their unique structural and electronic properties. Over the past decade, the materials have been used in a variety of reactions, including the oxygen reduction reaction, water splitting and CO2 activation, and have been shown to exhibit a range of catalytic mechanisms. Here, we review recent advances in the use of graphene and other 2D materials in catalytic applications, focusing in particular on the catalytic activity of heterogeneous systems such as van der Waals heterostructures (stacks of several 2D crystals). We discuss the advantages of these materials for catalysis and the different routes available to tune their electronic states and active sites. We also explore the future opportunities of these catalytic materials and the challenges they face in terms of both fundamental understanding and the development of industrial applications.

  3. The Landé-g factor in heterostructures

    NASA Astrophysics Data System (ADS)

    Cardoso, J. L.; Pereyra, P.

    2005-05-01

    We have studied the behavior of the Shubnikov-de Haas oscillations in magnetoresistance under applied magnetic fields with an arbitrary orientation. Different procedures to measure the Landé-g factor have been used in the literature. We propose four unambiguous methods and formulas for the evaluation of this quantity. The Landé-g factor obtained using these formulas compares within the 5% with the reported results of Brosig et al. [1] in InAs - AlSb quantum wells, Bompadre et al. [2] for Bismuth crystals, Kobayashi et al. [3] measuring magnetoresistance as a function of the gate Voltage and F. Fang et al. [4] for InAs - GaSb heterostructure.

  4. Gallium nitride heterostructures on 3D structured silicon.

    PubMed

    Fündling, Sönke; Sökmen, Unsal; Peiner, Erwin; Weimann, Thomas; Hinze, Peter; Jahn, Uwe; Trampert, Achim; Riechert, Henning; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas

    2008-10-08

    We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

  5. Observation of Interlayer Phonons in Transition Metal Dichalcogenide Heterostructures

    NASA Astrophysics Data System (ADS)

    He, Rui; Ye, Zhipeng; Ji, Chao; Means-Shively, Casie; Anderson, Heidi; Kidd, Tim; Chiu, Kuan-Chang; Chou, Cheng-Tse; Wu, Jenn-Ming; Lee, Yi-Hsien; Andersen, Trond; Lui, Chun Hung

    Interlayer phonon modes in transition metal dichalcogenide (TMD) heterostructures are observed for the first time. We measured the low-frequency Raman response of MoS2/WSe2 and MoSe2/MoS2 heterobilayers. We discovered a distinct Raman mode (30 - 35 cm-1) that cannot be found in any individual monolayers. By comparing with Raman spectra of Bernal bilayer (2L) MoS2, 2L MoSe2 and 2L WSe2, we identified the new Raman mode as the layer breathing vibration arising from the vertical displacement of the two TMD layers. The layer breathing mode (LBM) only emerges in bilayer regions with atomically close layer-layer proximity and clean interface. In addition, the LBM frequency exhibits noticeable dependence on the rotational angle between the two TMD layers, which implies a change of interlayer separation and interlayer coupling strength with the layer stacking.

  6. Exciton/plasmon mixing in metal-semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Symonds, Clémentine; Bellessa, Joel; Plenet, Jean-Claude; Cambril, Edmond; Miard, Audrey; Ferlazzo, Laurence; Lemaître, Aristide

    2010-01-01

    We report on the strong coupling between surface plasmons and inorganic quantum well excitons. The sample is formed by a corrugated silver film deposited on the top of a heterostructure consisting of five GaAs/GaAlAs quantum wells grown by molecular beam epitaxy. Reflectometry experiments at low temperature (77 K) evidence the formation of plasmon/heavy-hole exciton/light-hole exciton mixed states. The interaction energies, deduced by fitting the experimental data with a coupled oscillator model, amount to 22 meV for the plasmon/light-hole exciton and 21 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling are also discussed and qualitatively related to the plasmon polarization.

  7. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Peres, N. M. R.; Leist, J.; Geim, A. K.; Novoselov, K. S.; Ponomarenko, L. A.

    2012-02-01

    An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.

  8. Nanoengineering the second order susceptibility in semiconductor quantum dot heterostructures.

    PubMed

    Zielinski, Marcin; Winter, Shoshana; Kolkowski, Radoslaw; Nogues, Claude; Oron, Dan; Zyss, Joseph; Chauvat, Dominique

    2011-03-28

    We study second-harmonic generation from single CdTe/CdS core/shell rod-on-dot nanocrystals with different geometrical parameters, which allow to fine tune the nonlinear properties of the nanostructure. These hybrid semiconductor-semiconductor nanoparticles exhibit extremely strong and stable second-harmonic emission, although the size of CdTe core is still within the strong quantum confinement regime. The orientation sensitive polarization response is analyzed by means of a pointwise additive model of the third-order tensors associated to the nanoparticle components. These findings prove that engineering of semiconducting complex heterostructures at the single nanoparticle scale can lead to extremely bright nanometric nonlinear light sources.

  9. Thermal conductance of graphene/hexagonal boron nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Simon; McGaughey, Alan J. H.

    2017-03-01

    The lattice-based scattering boundary method is applied to compute the phonon mode-resolved transmission coefficients and thermal conductances of in-plane heterostructures built from graphene and hexagonal boron nitride (hBN). The thermal conductance of all structures is dominated by acoustic phonon modes near the Brillouin zone center that have high group velocity, population, and transmission coefficient. Out-of-plane modes make their most significant contributions at low frequencies, whereas in-plane modes contribute across the frequency spectrum. Finite-length superlattice junctions between graphene and hBN leads have a lower thermal conductance than comparable junctions between two graphene leads due to lack of transmission in the hBN phonon bandgap. The thermal conductances of bilayer systems differ by less than 10% from their single-layer counterparts on a per area basis, in contrast to the strong thermal conductivity reduction when moving from single- to multi-layer graphene.

  10. Narrow linewidth operation of buried-heterostructure photonic crystal nanolaser.

    PubMed

    Kim, Jimyung; Shinya, Akihiko; Nozaki, Kengo; Taniyama, Hideaki; Chen, Chin-Hui; Sato, Tomonari; Matsuo, Shinji; Notomi, Masaya

    2012-05-21

    We investigate the spectral linewidth of a monolithic photonic crystal nanocavity laser. The nanocavity laser is based on a buried heterostructure cavity in which an ultra-small InGaAsP active region is embedded in an InP photonic crystal. Although it was difficult to achieve narrow linewidth operation in previously reported photonic crystal nanocavity lasers, we have successfully demonstrated a linewidth of 143.5 MHz, which is far narrower than the cold cavity linewidth and the narrowest value yet reported for nanolasers and photonic crystal lasers. The narrow linewidth is accompanied by a low power consumption and an ultrasmall footprint, thus making this particular laser especially suitable for use as an integrated multi-purpose sensor.

  11. Chern insulating state in laterally patterned semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Li, Tommy; Sushkov, Oleg P.

    2016-10-01

    Hexagonally patterned two-dimensional p -type semiconductor systems are quantum simulators of graphene with strong and highly tunable spin-orbit interactions. We show that application of purely in-plane magnetic fields, in combination with the crystallographic anisotropy present in low-symmetry semiconductor interfaces, allows Chern insulating phases to emerge from an originally topologically insulating state after a quantum phase transition. These phases are characterized by pairs of co-propagating edge modes and Hall conductivities σx y=+2/e2 h ,-2/e2 h in the absence of Landau levels or cyclotron motion. With current lithographic technology, the Chern insulating transitions are predicted to occur in GaAs heterostructures at magnetic fields of ˜5 T .

  12. Tunneling and Transport in Clean Ferromagnet-Superconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Wu, Chien-Te; Valls, Oriol; Halterman, Klaus

    2014-03-01

    We study charge and spin transport in clean Ferromagnet (F)-Superconductor (S) layered structures. By combining a transfer matrix method with a numerical self-consistent solution of the Bogoliubov-de Gennes (BdG) equations, we compute the spin dependent tunneling conductance in F-F-S trilayers in a range of exchange fields and layer thicknesses. In particular, we investigate the dependence of the tunneling conductance on the angle α between the magnetizations in two F layers. We find a variety of non-monotonic and switching behaviors in these heterostructures. We also present results for charge and spin transport in S-F-F-S Josephson junctions. C.-T. Wu and O. T. Valls are supported in part by IARPA under Grant No. N66001-12-1-2023. C.-T. Wu is also supported by the University of Minnesota's Doctoral Dissertation Fellowship.

  13. Engineering orbital polarization in three-component nickelate heterostructures

    NASA Astrophysics Data System (ADS)

    Ahn, Charles

    2015-03-01

    The interplay between the structural and physical properties of transition metal complex oxides allows for the engineering of their functional properties by tuning atomic-scale structure using interfacial coupling. We show how this principle can be used to achieve orbital polarization and two-dimensional electronic conductivity in nickelate heterostructures. Using a combination of first principles theory and synchrotron-based experiments, we identify key structural features in LaNiO3 thin films grown using molecular beam epitaxy, allowing one to correlate differences in physical structure with electronic transport properties and x-ray absorption spectroscopy measurements. By applying general design principles, such as charge transfer and inversion symmetry breaking, which lead to degeneracy breaking of the Ni 3d orbitals, one can design and fabricate tri-component superlattices to engineer the electronic and orbital properties of rare-earth nickelate compounds, achieving a two-dimensional single band electronic surface at the Fermi energy.

  14. Layer Resolved Imaging of Magnetic Domain Motion in Epitaxial Heterostructures

    NASA Astrophysics Data System (ADS)

    Zohar, Sioan; Choi, Yongseong; Love, David; Mansell, Rhodri; Barnes, Crispin; Keavney, David; Rosenberg, Richard

    We use X-ray Excited Luminescence Microscopy (XELM) to image the elemental and layer resolved magnetic domain structure of an epitaxial Fe/Cr wedge/Co heterostructure in the presence of large magnetic fields. The observed magnetic domains exhibit several unique behaviors that depend on the Cr thickness (tCr) modulated interlayer exchange coupling (IEC) strength. For Cr thickness tCr??1.5?nm, strongly coupled parallel Co-Fe reversal and weakly coupled layer independent reversal are observed, respectively. The transition between these two reversal mechanisms for 0.34?

  15. Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

    PubMed Central

    Wahler, Martin; Homonnay, Nico; Richter, Tim; Müller, Alexander; Eisenschmidt, Christian; Fuhrmann, Bodo; Schmidt, Georg

    2016-01-01

    We present spin pumping and inverse spin Hall effect (ISHE) in an epitaxial complex oxide heterostructure. Ferromagnetic La0.7Sr0.3MnO3 (LSMO) is used as a source of spin pumping while the spin sink exhibiting the ISHE consists of SrRuO3 (SRO). SRO is a ferromagnetic oxide with metallic conductivity, however, with a Curie temperature (TC) of 155 K, thus well below room temperature. This choice allows to perform the experiment above and below TC of the SRO and to demonstrate that SRO not only shows an ISHE of a magnitude comparable to Pt (though with opposite sign) in its non magnetic state but also exhibits a finite ISHE even 50 K below TC. PMID:27346793

  16. Preparation of Ag@Ag₃PO₄@ZnO ternary heterostructures for photocatalytic studies.

    PubMed

    Jin, Chao; Liu, Guanglei; Zu, Lianhai; Qin, Yao; Yang, Jinhu

    2015-09-01

    In this article, we report a novel Ag@Ag3PO4@ZnO ternary heterostructures synthesized through a three-step approach. Firstly, single-crystalline Ag nanorods are fabricated and served as the templates for subsequent Ag3PO4 deposition. Secondly, Ag3PO4 crystals are grown around Ag core nanorods through a solution co-precipitation process, leading to the Ag@Ag3PO4 binary heterostructures. Finally, ZnO nanorod arrays on the surface of the Ag@Ag3PO4 heterostructures are realized via a seeded growth strategy, forming the typical Ag@Ag3PO4@ZnO ternary heterostructures. The photodegradation of rhodamine B under ultraviolet-visible light irradiation indicates that the Ag@Ag3PO4@ZnO ternary heterostructures exhibit much higher activities than pure Ag3PO4 and binary heterostructures of Ag@Ag3PO4. The higher photocatalytic activity of the Ag@Ag3PO4@ZnO composites may be attributed to the effective photogenerated charge separation at heterointerfaces of Ag/Ag3PO4 and Ag3PO4/ZnO, and the rapid electron transport along one-dimensional Ag and ZnO nanorods.

  17. Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures

    PubMed Central

    Hu, Xiaohui; Kou, Liangzhi; Sun, Litao

    2016-01-01

    The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report that the direct band gap can be achieved in bilayer MoSe2-WSe2 lateral heterostructures by alternating stacking orders. Specifically, when Se atoms from opposite layers are stacked directly on top of each other, AA and A’B stacked heterostructures show weaker interlayer coupling, larger interlayer distance and direct band gap. Whereas, when Se atoms from opposite layers are staggered, AA’, AB and AB’ stacked heterostructures exhibit stronger interlayer coupling, shorter interlayer distance and indirect band gap. Thus, the direct/indirect band gap can be controllable in bilayer MoSe2-WSe2 lateral heterostructures. In addition, the calculated sliding barriers indicate that the stacking orders of bilayer MoSe2-WSe2 lateral heterostructures can be easily formed by sliding one layer with respect to the other. The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs. PMID:27528196

  18. Organoclay hybrid materials as precursors of porous ZnO/silica-clay heterostructures for photocatalytic applications

    PubMed Central

    Akkari, Marwa; Aranda, Pilar; Ben Haj Amara, Abdessalem

    2016-01-01

    In this study, ZnO/SiO2-clay heterostructures were successfully synthesized by a facile two-step process applied to two types of clays: montmorillonite layered silicate and sepiolite microfibrous clay mineral. In the first step, intermediate silica–organoclay hybrid heterostructures were prepared following a colloidal route based on the controlled hydrolysis of tetramethoxysilane in the presence of the starting organoclay. Later on, pre-formed ZnO nanoparticles (NP) dispersed in 2-propanol were incorporated under ultrasound irradiation to the silica–organoclay hybrid heterostructures dispersed in 2-propanol, and finally, the resulting solids were calcinated to eliminate the organic matter and to produce ZnO nanoparticles (NP) homogeneously assembled to the clay–SiO2 framework. In the case of montmorillonite the resulting materials were identified as delaminated clays of ZnO/SiO2-clay composition, whereas for sepiolite, the resulting heterostructure is constituted by the assembling of ZnO NP to the sepiolite–silica substrate only affecting the external surface of the clay. The structural and morphological features of the prepared heterostructures were characterized by diverse physico-chemical techniques (such as XRD, FTIR, TEM, FE-SEM). The efficiency of these new porous ZnO/SiO2-clay heterostructures as potential photocatalysts in the degradation of organic dyes and the removal of pharmaceutical drugs in water solution was tested using methylene blue and ibuprofen compounds, respectively, as model of pollutants. PMID:28144545

  19. Band engineering of MoS2/stanene heterostructure: strain and electrostatic gating.

    PubMed

    Xiong, Wenqi; Xia, Congxin; Du, Juan; Wang, Tianxing; Peng, Yuting; Wei, Zhongming; Li, Jingbo

    2017-03-23

    As a fast developing field, van der Waals (vdW) heterostructure can overcome the weakness of single two-dimensional (2D) layered material and extend its electronic and optoelectronic applications. Through first-principles methods, the studied MoS2/stanene heterostructure preserves high-speed carrier characteristics and opens the direct band gap. Meanwhile, the band alignment shows that the electrons transfer from stanene to MoS2, which forms an internal electric field. As an effective strategy, the out-of-plane strain remarkably change the band gaps of heterostructure and enhances its carrier concentration. In addition, the combined effects of internal and external electric field can further open the band gaps and induce the direct-to-indirect gap transition in heterostructure. More interestingly, when the external electric field is equal to reverse internal one, the heterostructure regains a Dirac cone. Our results show that the MoS2/stanene heterostructure have the potential applications in highspeed optoelectronic devices.

  20. Synthesis and Characterizations of Two-Dimensional Atomic Layers and Their Heterostructures

    NASA Astrophysics Data System (ADS)

    Lee, Yi-Hsien

    2015-03-01

    Monolayers of van der Waals (vdw) materials, including graphene, h-BN, and MoS2, have been highlighted regarding both scientific and industrial aspects due to novel physical phenomenon inherited from the reduced dimensionality. Layered transition metal dichalcogenides (TMD) atomic layers, being considered as the thinnest semiconductor, exhibit great potential for advanced nano-devices. Monolayer in the class of offered a burgeoning field in fundamental physics, energy harvesting, electronics and optoelectronics. Recently, atomically thin heterostructures of TMD monolayer with various geometrical and energy band alignments are expected to be the key materials for next generation flexible optoelectronics. The individual TMD monolayers can be adjoined vertically or laterally to construct diverse heterostructures which are difficult to reach with the laborious pick up-and-transfer method of the exfoliated flakes. The ability to produce copious amounts of high quality layered heterostructures on diverse surfaces is highly desirable but it has remained a challenging issue. Here, we have achieved a direct synthesis of various heterostructures of monolayer TMDs. The synthesis was performed using ambient-pressure CVD with aromatic molecules as seeding promoters. We discuss possible growth behaviors, and we examine the symmetry and the interface of these heterostructures using optical analysis and atomic-resolution scanning TEM. Our method offers a controllable synthesis of to obtain high-quality heterostructures of TMD atomic layers with diverse interface geometry.

  1. Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating

    NASA Astrophysics Data System (ADS)

    Xiong, Wenqi; Xia, Congxin; Du, Juan; Wang, Tianxing; Peng, Yuting; Wei, Zhongming; Li, Jingbo

    2017-05-01

    In a fast developing field, it has been found that van der Waals heterostructures can overcome the weakness of single two-dimensional layered materials and extend their electronic and optoelectronic applications. Through first-principles methods, the studied MoS2/stanene heterostructure preserves high-speed carrier characteristics and opens the direct band gap. Simultaneously, the band alignment shows that the electrons transfer from stanene to MoS2, which forms an internal electric field. As an effective strategy, the out-of-plane strain remarkably changes the band gaps of the heterostructure and enhances its carrier concentration. In addition, the combined effects of the internal and external electric fields can further open the band gaps and induce a direct-to-indirect gap transition in the heterostructure. More interestingly, when the external electric field is equal to the reverse internal one, the heterostructure regains a Dirac cone. Our results show that the MoS2/stanene heterostructure has potential applications in high-speed optoelectronic devices.

  2. Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution.

    PubMed

    Li, Honglai; Wu, Xueping; Liu, Hongjun; Zheng, Biyuan; Zhang, Qinglin; Zhu, Xiaoli; Wei, Zheng; Zhuang, Xiujuan; Zhou, Hong; Tang, Wenxin; Duan, Xiangfeng; Pan, Anlian

    2017-01-24

    Composition-controlled growth of two-dimensional layered semiconductor heterostructures is crucially important for their applications in multifunctional integrated photonics and optoelectronics devices. Here, we report the realization of composition completely modulated layered semiconductor MoS2-MoS2(1-x)Se2x (0 < x < 1) lateral heterostructures via the controlled layer-selected atomic substitution of pregrown stacking MoS2, with a bilayer located at the center of a monolayer. Through controlling the reaction time, S at the monolayer MoS2 at the peripheral area can be selectively substituted by Se atoms at different levels, while the bilayer region at the center retains the original composition. Microstructure characterizations demonstrated the formation of lateral heterostructures with a sharp interface, with the composition at the monolayer area gradually modulated from MoS2 to MoSe2 and having high-quality crystallization at both the monolayer and the bilayer areas. Photoluminescence and Raman mapping studies exhibit the tunable optical properties only at the monolayer region of the as-grown heterostructures, which further demonstrates the realization of high-quality composition/bandgap modulated lateral heterostructures. This work offers an interesting and easy route for the development of high-quality layered semiconductor heterostructures for potential broad applications in integrated nanoelectronic and optoelectronic devices.

  3. Effect of silicon doping in InGaN/GaN heterostructure grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Surender, S.; Pradeep, S.; Prabakaran, K.; Singh, Shubra; Baskar, K.

    2017-05-01

    In this work the effect of Si doped InGaN/GaN heterostructure is systematically studied. The n-InGaN /GaN heterostructure are grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD). The heterostructure samples are investigated by structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature Photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. The composition of indium in n-InGaN/GaN heterostructure was calculated as 15.9% using epitaxy smooth fit software. The energy band gap (Eg) of the InGaN epilayer has been calculated as 2.78 eV using vigard's law. PL emission obtained at 446 nm for n-InGaN epilayer. AFM results indicate that the Si doped InGaN/GaN heterostructure has the root mean square (rms) roughness of about 0.59 nm for a scan area of 5×5 µm2 which has island like growth. Moreover, Hall measurements results shows that Si doped InGaN/GaN heterostructure possess carrier concentration of 4.2 × 1018cm-3 and mobility of 257 cm2/V s at room temperature.

  4. Mechanical properties and failure behaviour of graphene/silicene/graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Chung, Jing-Yang; Sorkin, Viacheslav; Pei, Qing-Xiang; Chiu, Cheng-Hsin; Zhang, Yong-Wei

    2017-08-01

    Van der Waals heterostructures based on graphene and other 2D materials have attracted great attention recently. In this study, the mechanical properties and failure behaviour of a graphene/silicene/graphene heterostructure are investigated using molecular dynamics simulations. We find that by sandwiching silicene in-between two graphene layers, both ultimate tensile strength and Young’s modulus of the heterostructure increase approximately by a factor of 10 compared with those of stand-alone silicene. By examining the fracture process of the heterostructure, we find that graphene and silicene exhibit quite different fracture behaviour. While graphene undergoes cleavage through its zigzag edge only, silicene can cleave through both its zigzag and armchair edges. In addition, we study the effects of temperature and strain rate on the mechanical properties of the heterostructure and find that an increase in temperature results in a decrease in its mechanical strength and stiffness, while an increase in strain rate leads to an increase in its mechanical strength without significant changes in its stiffness. We further explore the failure mechanism and show that the temperature and strain-rate dependent fracture stress can be accurately described by the kinetic theory of fracture. Our findings provide a deep insight into the mechanical properties and failure mechanism of graphene/silicene heterostructures.

  5. Organoclay hybrid materials as precursors of porous ZnO/silica-clay heterostructures for photocatalytic applications.

    PubMed

    Akkari, Marwa; Aranda, Pilar; Ben Haj Amara, Abdessalem; Ruiz-Hitzky, Eduardo

    2016-01-01

    In this study, ZnO/SiO2-clay heterostructures were successfully synthesized by a facile two-step process applied to two types of clays: montmorillonite layered silicate and sepiolite microfibrous clay mineral. In the first step, intermediate silica-organoclay hybrid heterostructures were prepared following a colloidal route based on the controlled hydrolysis of tetramethoxysilane in the presence of the starting organoclay. Later on, pre-formed ZnO nanoparticles (NP) dispersed in 2-propanol were incorporated under ultrasound irradiation to the silica-organoclay hybrid heterostructures dispersed in 2-propanol, and finally, the resulting solids were calcinated to eliminate the organic matter and to produce ZnO nanoparticles (NP) homogeneously assembled to the clay-SiO2 framework. In the case of montmorillonite the resulting materials were identified as delaminated clays of ZnO/SiO2-clay composition, whereas for sepiolite, the resulting heterostructure is constituted by the assembling of ZnO NP to the sepiolite-silica substrate only affecting the external surface of the clay. The structural and morphological features of the prepared heterostructures were characterized by diverse physico-chemical techniques (such as XRD, FTIR, TEM, FE-SEM). The efficiency of these new porous ZnO/SiO2-clay heterostructures as potential photocatalysts in the degradation of organic dyes and the removal of pharmaceutical drugs in water solution was tested using methylene blue and ibuprofen compounds, respectively, as model of pollutants.

  6. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.

    PubMed

    Fang, Hui; Battaglia, Corsin; Carraro, Carlo; Nemsak, Slavomir; Ozdol, Burak; Kang, Jeong Seuk; Bechtel, Hans A; Desai, Sujay B; Kronast, Florian; Unal, Ahmet A; Conti, Giuseppina; Conlon, Catherine; Palsson, Gunnar K; Martin, Michael C; Minor, Andrew M; Fadley, Charles S; Yablonovitch, Eli; Maboudian, Roya; Javey, Ali

    2014-04-29

    Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells, and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide heterostructures can be designed and built by assembling individual single layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components, and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single-layer WSe2 and MoS2. We observe a large Stokes-like shift of ∼ 100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment having spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. This coupling at the hetero-interface can be readily tuned by inserting dielectric layers into the vdW gap, consisting of hexagonal BN. Consequently, the generic nature of this interlayer coupling provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.

  7. Enhancement and sign inversion of junction magnetoresistance on Mn substitution in magnetite/p-Si heterostructures

    NASA Astrophysics Data System (ADS)

    Aireddy, H.; Das, Amal K.

    2016-10-01

    Fe3-x Mn x O4/p-Si heterostructures (x  =  0, 0.25, and 0.5) were prepared using pulse laser deposition to explore their magneto-electric transport characteristics. All the heterostructures exhibit a rectifying property and junction magnetoresistance of 90% (x  =  0), 117% (x  =  0.25) and 120% (x  =  0.5) at room temperature (300 K), low bias voltage (0 to  -4 V) and low magnetic field (<1 T). Significantly, the sign (positive or negative) of junction magnetoresistance depends on the range of bias voltage for all heterostructures, but for a particular range of voltage, the sign inversion (positive to negative and vice versa) of junction magnetoresistance is observed in the heterostructure of Mn substituted Fe3O4 (Fe3-x Mn x O4) compared to the virgin (Fe3O4) one. The enhancement of junction magnetoresistance and its sign inversion upon Mn substitution in Fe3O4 are assigned to the enhancement of magnetization and the spin filtering at the junction of the heterostructures. The electronic band structure of the Fe3O4/SiO2/p-Si heterostructure and the p-type degenerate semiconducting feature of Mn-substituted Fe3-x Mn x O4 films are considered to explain the results.

  8. Electrochemically synthesized magnetic nanowire heterostructures and arrays for acoustic sensing

    NASA Astrophysics Data System (ADS)

    McGary, Patrick David

    Biological cilia in humans and animals serve many functions, including sensing of acoustic and sensory signals and actuation for mobility in small species or for motion of bodily fluids in larger species. This work sought to fabricate nanowire arrays as artificial cilia. Arrays of tiny sensors at nanoscale dimensions have theoretical advantages to macroscale sensors including higher spatial resolution, miniscule size, and higher ultimate strength for each sensing element. Theoretical investigations showed that a magnetic/non-magnetic heterostructure would enable nanowires with improved sensitivity over single element nanowires. Here, nanowire structures included a soft magnetostrictive sensing segment (such as Ni or Fe1-xGax [also called galfenol]), a permanent magnetic segment to provide an integrated magnetic bias, and a long and hard non-magnetic end segment to increase the viscous drag force of the fluid on the nanowire. Galfenol is a new large magnetostrictive material that has moderate magnetostriction but excellent mechanical properties. This work included the first successful electroplating process for this unique alloy. This enabled the fabrication of these alloys into nanoscopic form. These nanowire structures were grown into nanoporous anodic aluminum oxide (AAO) templates using a robust two-step anodization process. When grown at the proper conditions (temperature, electrolyte, and voltage), the templates contained highly-ordered nanopores with small diameters (10-100 nm), short center-to-center distances (25-250 nm), and long lengths (0.1-100 mum). Metal contacts were deposited onto one side of the templates, and magnetostrictive, magnetic, and non-magnetic materials were sequentially electrodeposited into the nanopores. Controlling the non-magnetic segment lengths enabled control of the nanowire resonant frequency. By using graded nanowire lengths across the array, frequency filtering as a pre-filter for subsequent signal processing could be performed

  9. Efficient Heterostructures for Combined Interference and Plasmon Resonance Raman Amplification.

    PubMed

    Alvarez-Fraga, Leo; Climent-Pascual, Esteban; Aguilar-Pujol, Montserrat; Ramírez-Jiménez, Rafael; Jiménez-Villacorta, Félix; Prieto, Carlos; de Andrés, Alicia

    2017-02-01

    The detection, identification, and quantification of different types of molecules and the optical imaging of, for example, cellular processes are important challenges. Here, we present how interference-enhanced Raman scattering (IERS) in adequately designed heterostructures can provide amplification factors relevant for both detection and imaging. Calculations demonstrate that the key factor is maximizing the absolute value of the refractive indices' difference between dielectric and metal layers. Accordingly, Si/Al/Al2O3/graphene heterostructures have been fabricated by optimizing the thickness and roughness and reaching enhancement values up to 700 for 488 nm excitation. The deviation from the calculated enhancement, 1200, is mainly due to reflectivity losses and roughness of the Al layer. The IERS platforms are also demonstrated to improve significantly the quality of white light images of graphene and are foreseen to be adequate to reveal the morphology of 2D and biological materials. A graphene top layer is adequate for most organic molecule deposition and often quenches possible fluorescence, permitting Raman signal detection, which, for a rhodamine 6G (R6G) monolayer, presents a gain of 400. Without graphene, the nonquenched R6G fluorescence is similarly amplified. The wavelength dependence of the involved refractive indices predicts much higher amplification (around 10(4)) for NIR excitation. These interference platforms can therefore be used to gain contrast and intensity in white light, Raman, and fluorescence imaging. We also demonstrate that surface-enhanced Raman scattering and IERS amplifications can be efficiently combined, leading to a gain of >10(5) (at 488 nm) by depositing a Ag nanostructured transparent film on the IERS platform. When the plasmonic structures deposited on the IERS platforms are optimized, single-molecule detection can be actively envisaged.

  10. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.

    PubMed

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-10-07

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.

  11. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

    PubMed Central

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-01-01

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°. PMID:26442629

  12. Silicon/silicon germanium heterostructures: Materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors

    NASA Astrophysics Data System (ADS)

    Chung, Sung-Yong

    With the advent of the first transistor in 1947, the integrated circuit (IC) industry has rapidly expanded with the tremendous advances in the development of IC technology. The driving force in the evolution of IC technology is the reduction of transistor sizes. Without a doubt, transistor miniaturization will face fundamental physical limitations imposed by further dimensional scaling of silicon transistors in the near future. According to the 2004 International Technology Roadmap for Semiconductors (ITRS), the width of a gate electrode for complementary metal-oxide-semiconductor (CMOS) is projected to be a mere 7 nm by the end of 2018. No further solutions have been found. Since the 2001 ITRS, tunneling devices have been evaluated as an emerging technology to augment silicon CMOS. Transistor circuitry incorporating tunneling devices realized using III-V semiconductors has exhibited superior performance over its transistor-only counterparts. However, due to fundamental differences in material properties, such technology is not readily compatible with the mainstream platforms (>95% market share of semiconductors) of CMOS and HBT technologies. Recently, we demonstrated the successful monolithic integration of Si-based resonant interband tunnel diodes (RITDs) with CMOS and SiGe HBT, which makes them more attractive than III-V based tunnel diodes for system level integration. This dissertation is concerned with the development of quantum functional tunneling devices, RITDs, and high-speed transistors, HBTs, using Si/SiGe heterostructures as well as material growth and electrical properties of Si/SiGe heterostructures. Emphasis is placed on the development of Si/SiGe-based RITDs, HBTs, and their monolithic integration for 3-terminal negative differential resistance (NDR) devices. The operating principles of Si-based RITDs and the integration of RITD with HBT are also discussed.

  13. Solvothermal synthesis of Ag hybrid BiPO4 heterostructures with enhanced photodegradation activity and stability.

    PubMed

    Huang, Chang-Wei; Wu, Mei-Yao; Lin, Yang-Wei

    2017-03-15

    In this study, Ag hybrid BiPO4 (Ag/BiPO4) heterostructures were synthesized using a solvothermal method. The morphologies and optical properties of the Ag/BiPO4 heterostructures were drastically different from those of BiPO4 and were highly dependent on the AgNO3:BiPO4 weight percent during the synthesis. The three formulated heterostructures were evaluated for their photocatalytic degradation of methylene blue (MB) under UV light illumination; the 0.5%Ag/BiPO4 heterostructure was observed to result in 99% degradation of MB within 60min, a remarkably higher level of photodegradation activity than the levels caused by TiO2 and BiPO4. Furthermore, even after use for five cycles of MB degradation, the 0.5%Ag/BiPO4 heterostructure showed no observable loss in photodegradation activity and no change in XRD patterns, demonstrating its chemical and structural stability. According to the results of a systematic experimental investigation, the enhanced photodegradation activity of this Ag/BiPO4 heterostructure could be ascribed to the high position of its valence band and the highly efficient separation of photogenerated electrons and holes. Moreover, hydroxyl radicals and holes were found to be the major reactive species. Successful photodegradation of standard dye solutions, including acid blue 1, methyl orange, fast green, rhodamine B, rhodamine 6G, and MB, in real water samples was demonstrated with the 0.5%Ag/BiPO4 heterostructure, providing clear evidence of its utility for treating waste water containing organic dyes.

  14. Two-Dimensional Heterostructure as a Platform for Surface-Enhanced Raman Scattering.

    PubMed

    Tan, Yang; Ma, Linan; Gao, Zhibin; Chen, Ming; Chen, Feng

    2017-04-12

    Raman enhancement on a flat nonmetallic surface has attracted increasing attention, ever since the discovery of graphene enhanced Raman scattering. Recently, diverse two-dimensional layered materials have been applied as a flat surface for the Raman enhancement, attributed to different mechanisms. Looking beyond these isolated materials, atomic layers can be reassembled to design a heterostructure stacked layer by layer with an arbitrary chosen sequence, which allows the flow of charge carriers between neighboring layers and offers novel functionalities. Here, we demonstrate the heterostructure as a novel Raman enhancement platform. The WSe2 (W) monolayer and graphene (G) were stacked together to form a heterostructure with an area of 10 mm × 10 mm. Heterostructures with different stacked structuress are used as platforms for the enhanced Raman scattering, including G/W, W/G, G/W/G/W, and W/G/G/W. On the surface of the heterostructure, the intensity of the Raman scattering is much stronger compared with isolated layers, using the copper phthalocyanine (CuPc) molecule as a probe. It is found that the Raman enhancement effect on heterostructures depends on stacked methods. Phonon modes of CuPc have the strongest enhancement on G/W. W/G and W/G/G/W have a stronger enhancement than that on the isolated WSe2 monolayer, while lower than the graphene monolayer. The G/W/G/W/substrate demonstrated a comparable Raman enhancement effect than the G/W/substrate. These differences are due to the different interlayer couplings in heterostructures related to electron transition probability rates, which are further proved by first-principle calculations and probe-pump measurements.

  15. Heterostructures containing dichalcogenides-new materials with predictable nanoarchitectures and novel emergent properties

    NASA Astrophysics Data System (ADS)

    Hamann, Danielle M.; Hadland, Erik C.; Johnson, David C.

    2017-09-01

    Heterostructures unconstrained by epitaxy have generated considerable excitement due to the discovery of emergent properties—properties not found in either constituent. Heterostructures enable the surfaces on either side of two-dimensional (2D) layers to be used to systematically investigate phenomena such as superconductivity and magnetism in the 2D limit. The ability to choose constituents facilitates the prediction of emergent properties created by the unusual coordination environments at incommensurate interfaces. There have already been many reviews on heterostructures, focusing on a variety of topics that reflect the diverse interest in this area as well as the potential for new technologies. Hence this review focuses mainly on the synthesis and structural characterization of heterostructures containing transition metal dichalcogenides (TMD). This review only briefly discusses 2D materials and TMD/TMD heterostructure devices and the performances that have been achieved. This review provides a historical context for the rapid development of this field and discusses proposed mechanisms for emergent properties. Up to now, the materials used in heterostructures have mainly been materials with 2D structures, as these compounds can be easily cleaved into ultrathin layers. This review discusses the expansion of heterostructure constituents to include materials that do not have 2D structures. Structural changes and charge redistribution between adjacent (or even more distant) layers are likely to be larger for 3D constituents than with 2D constituents based on known misfit layer compounds. Systematic changes in properties with layer thickness, layer sequences, and the identity of constituents will increase our understanding of emergent properties and how they can be optimized.

  16. Rapid Construction of ZnO@ZIF-8 Heterostructures with Size-Selective Photocatalysis Properties.

    PubMed

    Wang, Xianbiao; Liu, Jin; Leong, Sookwan; Lin, Xiaocheng; Wei, Jing; Kong, Biao; Xu, Yongfei; Low, Ze-Xian; Yao, Jianfeng; Wang, Huanting

    2016-04-13

    To selectively remove heavy metal from dye solution, inspired by the unique pore structure of ZIF-8, we developed a synthetic strategy for rapid construction of ZnO@ZIF-8 heterostructure photocatalyst for selective reduction of Cr(VI) between Cr(VI) and methylene blue (MB). In particular, ZnO@ZIF-8 core-shell heterostructures were prepared by in situ ZIF-8 crystal growth using ZnO colloidal spheres as template and zinc source within 8-60 min. The shell of the resulting ZnO@ZIF-8 core-shell heterostructure with a uniform thickness of around 30 nm is composed of ZIF-8 crystal polyhedrons. The concentration of organic ligand 2-methylimidazole (Hmim) was found to be crucial for the formation of ZnO@ZIF-8 core-shell heterostructures. Different structures, ZnO@ZIF-8 core-shell spheres and separate ZIF-8 polyhedrons could be formed by altering Hmim concentration, which significantly influences the balance between rate of Zn(2+) release from ZnO and coordinate rate. Importantly, such ZnO@ZIF-8 core-shell heterostructures exhibit size-selective photocatalysis properties due to selective adsorption and permeation effect of ZIF-8 shell. The as-synthesized ZnO@ZIF-8 heterostructures exhibited enhanced selective reduction of Cr(VI) between Cr(VI) and MB, which may find application in the dye industry. This work not only provides a general route for rapid fabrication of such core-shell heterostructures but also illustrates a strategy for selectively enhanced photocatalysis performance by utilizing adsorption and size selectivity of ZIF-8 shell.

  17. Shape control of multi-material heterostructures for catalytic applications

    NASA Astrophysics Data System (ADS)

    Habas, Susan Ellen

    Shape control of nanomaterials has become increasingly important, as many of their physical and chemical properties are highly dependent on morphology. A tremendous amount of effort has been spent in attempt to control these properties through manipulation of size, composition, and shape. Nanocrystal shape control for both single- and multiple-material systems, however, remains largely empirical and still presents a major challenge. In this dissertation, new methods are described for the rational synthetic design of heterostructures with controlled morphology which is essential for tailoring the catalytic properties of these multi-material systems. Catalytic activity and selectivity are governed by the nature of the catalyst surface, making shaped nanocrystals ideal substrates for understanding the influence of surface structure on heterogeneous catalysis at the nanoscale. First, synthetic methods were developed to produce catalytically active platinum nanocrystals with control over their shape and surface chemistry. Initially, the focus was on the removal of strongly-bound surface stabilizing molecules by ligand exchange to give catalytically clean surfaces. However, the presence of foreign ions used as a shape control agent to produce cubic, cuboctahedral, and octahedrally shaped nanocrystals was found to inhibit catalytic activity. In response, a method was developed for the shape control of uniform platinum nanoparticles stabilized by weakly interacting alkylammonium ions in the absence of foreign metal ions, which showed improved activity for ethylene hydrogenation. The next section describes the application of these highly-faceted platinum nanocrystals as nucleation centers for overgrowth of a secondary metal to obtain shape-controlled heterostructures. Seeded growth allows for the use of the surface structure and corresponding chemical identity of a well-defined seed to control nucleation and growth of another material. Cubic platinum seeds can direct the

  18. Graphene, other 2D atomic crystals and their heterostructures

    NASA Astrophysics Data System (ADS)

    Novoselov, Kostya S.

    2014-03-01

    Probably the most important ``property'' of graphene is that it has opened a floodgate of experiments on many other 2D atomic crystals: BN, NbSe2, TaS2, MoS2, etc. One can use similar strategies to those applied to graphene and obtain new materials by mechanical or liquid phase exfoliation of layered materials or CVD growth. An alternative strategy to create new 2D crystals is to start with an existing one (like graphene) and use it as an atomic scaffolding to modify it by chemical means (graphane and fluorographene are good examples). The resulting pool of 2D crystals is huge, and they cover a massive range of properties: from the most insulating to the most conductive, from the strongest to the softest. If 2D materials provide a large range of different properties, sandwich structures made up of 2, 3, 4 ...different layers of such materials can offer even greater scope. Since these 2D-based heterostructures can be tailored with atomic precision and individual layers of very different character can be combined together, - the properties of these structures can be tuned to study novel physical phenomena (Coulomb drag, Hostadter butterfly, metal-insulator transition, etc) or to fit an enormous range of possible applications, with the functionality of heterostructure stacks is ``embedded'' in their design (tunnelling or hot-electron transistors, photovoltaic devices). Of particular interest are the tunnelling structures. Being able to control the thickness with atomic precision and having a variety of different material in disposal allows us to modify both the height and the width of the tunnelling barrier in the wide range. The use of graphene as electrodes and utilising insulating (BN) or semiconducting (MoS2, WS2) materials as the tunnelling barrier led to the creation of tunnelling transistors and tunnelling photovoltaic devices and the observation of the resonance tunnelling associated with momentum conservation. We will also consider tunnelling in magnetic

  19. Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

    NASA Astrophysics Data System (ADS)

    Guthrie, Daniel K.

    1998-09-01

    The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of

  20. Interlayer electron-phonon coupling in WSe2/hBN heterostructures

    NASA Astrophysics Data System (ADS)

    Jin, Chenhao; Kim, Jonghwan; Suh, Joonki; Shi, Zhiwen; Chen, Bin; Fan, Xi; Kam, Matthew; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Wu, Junqiao; Wang, Feng

    2017-02-01

    Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures. Interlayer electron-electron interactions, for example, have enabled fascinating physics that is difficult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures. In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe2/hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe2 and a new hybrid state present only in WSe2/hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications.

  1. Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance.

    PubMed

    Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen

    2017-10-04

    Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh Ion/Ioff ratio of 4.91 × 10(3), a high photoconductive gain of 1.10 × 10(3), a high detectivity of 1.65 × 10(13) Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm(-2)). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

  2. Direct Growth of MoS₂/h-BN Heterostructures via a Sulfide-Resistant Alloy.

    PubMed

    Fu, Lei; Sun, Yangyong; Wu, Nian; Mendes, Rafael G; Chen, Linfeng; Xu, Zhen; Zhang, Tao; Rümmeli, Mark H; Rellinghaus, Bernd; Pohl, Darius; Zhuang, Lin; Fu, Lei

    2016-02-23

    Improved properties arise in transition metal dichalcogenide (TMDC) materials when they are stacked onto insulating hexagonal boron nitride (h-BN). Therefore, the scalable fabrication of TMDCs/h-BN heterostructures by direct chemical vapor deposition (CVD) growth is highly desirable. Unfortunately, to achieve this experimentally is challenging. Ideal substrates for h-BN growth, such as Ni, become sulfides during the synthesis process. This leads to the decomposition of the pregrown h-BN film, and thus no TMDCs/h-BN heterostructure forms. Here, we report a thoroughly direct CVD approach to obtain TMDCs/h-BN vertical heterostructures without any intermediate transfer steps. This is attributed to the use of a nickel-based alloy with excellent sulfide-resistant properties and a high catalytic activity for h-BN growth. The strategy enables the direct growth of single-crystal MoS2 grains of up to 200 μm(2) on h-BN, which is approximately 1 order of magnitude larger than that in previous reports. The direct band gap of our grown single-layer MoS2 on h-BN is 1.85 eV, which is quite close to that for free-standing exfoliated equivalents. This strategy is not limited to MoS2-based heterostructures and so allows the fabrication of a variety of TMDCs/h-BN heterostructures, suggesting the technique has promise for nanoelectronics and optoelectronic applications.

  3. Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

    SciTech Connect

    Elder, Robert M. E-mail: mahesh.neupane.ctr@mail.mil; Neupane, Mahesh R. E-mail: mahesh.neupane.ctr@mail.mil; Chantawansri, Tanya L.

    2015-08-17

    Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

  4. Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures.

    PubMed

    He, Yongmin; Yang, Yang; Zhang, Zhuhua; Gong, Yongji; Zhou, Wu; Hu, Zhili; Ye, Gonglan; Zhang, Xiang; Bianco, Elisabeth; Lei, Sidong; Jin, Zehua; Zou, Xiaolong; Yang, Yingchao; Zhang, Yuan; Xie, Erqing; Lou, Jun; Yakobson, Boris; Vajtai, Robert; Li, Bo; Ajayan, Pulickel

    2016-05-11

    Vertically stacked van der Waals heterostructures composed of compositionally different two-dimensional atomic layers give rise to interesting properties due to substantial interactions between the layers. However, these interactions can be easily obscured by the twisting of atomic layers or cross-contamination introduced by transfer processes, rendering their experimental demonstration challenging. Here, we explore the electronic structure and its strain dependence of stacked MoSe2/WSe2 heterostructures directly synthesized by chemical vapor deposition, which unambiguously reveal strong electronic coupling between the atomic layers. The direct and indirect band gaps (1.48 and 1.28 eV) of the heterostructures are measured to be lower than the band gaps of individual MoSe2 (1.50 eV) and WSe2 (1.60 eV) layers. Photoluminescence measurements further show that both the direct and indirect band gaps undergo redshifts with applied tensile strain to the heterostructures, with the change of the indirect gap being particularly more sensitive to strain. This demonstration of strain engineering in van der Waals heterostructures opens a new route toward fabricating flexible electronics.

  5. Non-radiative relaxation and rectification behavior of metal/semiconductor tetrapod heterostructures

    SciTech Connect

    Kanta Haldar, Krishna; Kundu, Simanta; Patra, Amitava

    2014-02-10

    The metal-semiconductor hetero-structures have recently emerged as functional materials for their potential applications in the areas of photonic, optoelectronic, and other fields. Here, we discuss the structural characterization of Au/CdSe tetrapod hetero-structures by using high-resolution transmission electron microscope, high angle annular dark field-scanning transmission electron microscopic, and X-ray diffraction. The blue shifting of the plasmonic band and red shifting of the excitonic band suggest a strong surface plasmon-exciton interaction between Au and CdSe in Au/CdSe tetrapod heterostructure. A significant photoluminescence quenching (83.4%) of CdSe nanorod (NR) is observed in the presence of Au nanoparticle in Au/CdSe tetrapod heterostructure. The radiative and nonradiative decay rates of CdSe nanorods are found to be modified in Au/CdSe tetrapod structures and the nonradiative rate changes from 1.91 × 10{sup 7} s{sup −1} to 9.33 × 10{sup 9} s{sup −1} for CdSe NR to Au/CdSe tetrapod structure, respectively. Current-voltage characteristics of Au/CdSe heterostructure exhibit the rectification property with a threshold voltage of about 0.85 V and the rectifying ratio is 140 which can open up avenues for developing challenging devices.

  6. Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors

    NASA Astrophysics Data System (ADS)

    Zhou, Xing; Zhou, Nan; Li, Chao; Song, Hongyue; Zhang, Qi; Hu, Xiaozong; Gan, Lin; Li, Huiqiao; Lü, Jingtao; Luo, Jun; Xiong, Jie; Zhai, Tianyou

    2017-06-01

    Van der Waals heterostructures from atomically thin 2D materials have opened up new realms in modern semiconductor industry. Recently, 2D layered semiconductors such as MoS2 and SnSe2 have already demonstrated excellent electronic and optoelectronic properties due to their high electron mobility and unique band structures. Such combination of SnSe2 with MoS2 may provide a novel platform for the applications in electronics and optoelectronics. Thus, we constructed SnSe2/MoS2 based van der Waals heterostructures using MoS2 as templates, which may enrich the family of 2D van der Waals heterostructures. We demonstrate that the vdW heterostructures with high symmetry crystallographic directions show efficient interlayer charge transfer due to the strong coupling. This strong coupling is confirmed by theory calculations, low-temperature photoluminescence (PL) spectra, and electrical transport properties. High performance photodetector based on the vdW heterostructure has been demonstrated with a high responsivity of up to 9.1  ×  103 A W-1 which is higher by two orders of magnitude than those MoS2-only devices. The improved performance can be attributed to the efficient charge transfer from MoS2 to SnSe2 at the interface.

  7. Heterostructured electrode with concentration gradient shell for highly efficient oxygen reduction at low temperature

    PubMed Central

    Zhou, Wei; Liang, Fengli; Shao, Zongping; Chen, Jiuling; Zhu, Zhonghua

    2011-01-01

    Heterostructures of oxides have been widely investigated in optical, catalytic and electrochemical applications, because the heterostructured interfaces exhibit pronouncedly different transport, charge, and reactivity characteristics compared to the bulk of the oxides. Here we fabricated a three-dimensional (3D) heterostructured electrode with a concentration gradient shell. The concentration gradient shell with the composition of Ba0.5-xSr0.5-yCo0.8Fe0.2O3-δ (BSCF-D) was prepared by simply treating porous Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCF) backbone with microwave-plasma. Electrochemical impedance spectroscopy reveals that the oxygen surface exchange rate of the BSCF-D is enhanced by ~250% that of the pristine BSCF due to the appearance of the shell. The heterostructured electrode shows an interfacial resistance as low as 0.148 Ω cm2 at 550°C and an unchanged electrochemical performance after heating treatment for 200 h. This method offers potential to prepare heterostructured oxides not only for electrochemical devices but also for many other applications that use ceramic materials. PMID:22355670

  8. Augmented Photoelectrochemical Efficiency of ZnO/TiO2 Nanotube Heterostructures

    NASA Astrophysics Data System (ADS)

    Boda, Muzaffar Ahmad; Shah, Mohammad Ashraf

    2017-08-01

    ZnO/TiO2 nanotube heterostructures have been fabricated by electrodeposition of ZnO microcrystals over electrochemically anodized TiO2 nanotube arrays. The resulting ZnO/TiO2 nanotube heterostructures showed enhanced photocurrent density of 5.72 mA cm-2, about 1.5 times the value of 3.68 mA cm-2 shown by bare compact TiO2 nanotubes. This enhanced photocurrent density of the ZnO/TiO2 nanotube heterostructures is due to high electron mobility in the ZnO crystals, thereby decreasing the electron-hole recombination process, good interfacial quality between the ZnO and TiO2 structures, and a proposed smooth charge-transfer mechanism due to band bending at the interface. The morphological features of the as-prepared heterostructures were determined by field-emission scanning electron microscopy (FESEM). The crystallinity and phase purity of the samples were confirmed by x-ray diffraction (XRD) analysis. The light absorption properties of the prepared samples were investigated by ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRS). The photoelectrochemical efficiency of bare and ZnO-modified TiO2 nanotube heterostructures was determined by electrochemical analyzer.

  9. Self-assembly of electronically abrupt borophene/organic lateral heterostructures

    PubMed Central

    Liu, Xiaolong; Wei, Zonghui; Balla, Itamar; Mannix, Andrew J.; Guisinger, Nathan P.; Luijten, Erik; Hersam, Mark C.

    2017-01-01

    Two-dimensional boron sheets (that is, borophene) have recently been realized experimentally and found to have promising electronic properties. Because electronic devices and systems require the integration of multiple materials with well-defined interfaces, it is of high interest to identify chemical methods for forming atomically abrupt heterostructures between borophene and electronically distinct materials. Toward this end, we demonstrate the self-assembly of lateral heterostructures between borophene and perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA). These lateral heterostructures spontaneously form upon deposition of PTCDA onto submonolayer borophene on Ag(111) substrates as a result of the higher adsorption enthalpy of PTCDA on Ag(111) and lateral hydrogen bonding among PTCDA molecules, as demonstrated by molecular dynamics simulations. In situ x-ray photoelectron spectroscopy confirms the weak chemical interaction between borophene and PTCDA, while molecular-resolution ultrahigh-vacuum scanning tunneling microscopy and spectroscopy reveal an electronically abrupt interface at the borophene/PTCDA lateral heterostructure interface. As the first demonstration of a borophene-based heterostructure, this work will inform emerging efforts to integrate borophene into nanoelectronic applications. PMID:28261662

  10. Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

    SciTech Connect

    Marmalyuk, Aleksandr A; Ladugin, M A; Yarotskaya, I V; Panarin, V A; Mikaelyan, G T

    2012-01-31

    Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays and allows the power - current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.

  11. Interlayer electron-phonon coupling in WSe2/hBN heterostructures

    NASA Astrophysics Data System (ADS)

    Jin, Chenhao; Kim, Jonghwan; Suh, Joonki; Shi, Zhiwen; Chen, Bin; Fan, Xi; Kam, Matthew; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Wu, Junqiao; Wang, Feng

    2016-10-01

    Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures. Interlayer electron-electron interactions, for example, have enabled fascinating physics that is difficult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures. In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe2/hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe2 and a new hybrid state present only in WSe2/hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications.

  12. Au@MoS2 Core-Shell Heterostructures with Strong Light-Matter Interactions.

    PubMed

    Li, Yuan; Cain, Jeffrey D; Hanson, Eve D; Murthy, Akshay A; Hao, Shiqiang; Shi, Fengyuan; Li, Qianqian; Wolverton, Chris; Chen, Xinqi; Dravid, Vinayak P

    2016-12-14

    There are emerging opportunities to harness diverse and complex geometric architectures based on nominal two-dimensional atomically layered structures. Herein we report synthesis and properties of a new core-shell heterostructure, termed Au@MoS2, where the Au nanoparticle is snugly and contiguously encapsulated by few shells of MoS2 atomic layers. The heterostructures were synthesized by direct growth of multilayer fullerene-like MoS2 shell on Au nanoparticle cores. The Au@MoS2 heterostructures exhibit interesting light-matter interactions due to the structural curvature of MoS2 shell and the plasmonic effect from the underlying Au nanoparticle core. We observed significantly enhanced Raman scattering and photoluminescence emission on these heterostructures. We attribute these enhancements to the surface plasmon-induced electric field, which simulations show to mainly localize within the MoS2 shell. We also found potential evidence for the charge transfer-induced doping effect on the MoS2 shell. The DFT calculations further reveal that the structural curvature of MoS2 shell results in a modification of its electronic structure, which may facilitate the charge transfer from MoS2 to Au. Such Au@MoS2 core-shell heterostructures have the potential for future optoelectronic devices, optical imaging, and other energy-environmental applications.

  13. Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

    SciTech Connect

    Lin, Yung-Chen; Kim, Dongheun; Li, Zhen; Nguyen, Binh-Minh; Li, Nan; Zhang, Shixiong; Yoo, Jinkyoung

    2016-12-14

    Here we report on strain-induced structural defect formation in core Si nanowire of Si/Ge core/shell nanowire heterostructure and influences of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only Ge shell region or in both Ge shell and Si core regions and is associated with the increase of the shell volume fraction. The relax of misfit strain in [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of cross-over defect formation is of great importance for the understanding of heteroepitaxy in radial heterostructures at nanoscale and building the three dimensional heterostructures for the various applications. In addition, the effect of the defect formation on nanomaterial’s functionality is investigated by electrochemical performance test. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.

  14. Three-dimensional type II ZnO/ZnSe heterostructures and their visible light photocatalytic activities.

    PubMed

    Cho, Seungho; Jang, Ji-Wook; Kim, Jungwon; Lee, Jae Sung; Choi, Wonyong; Lee, Kun-Hong

    2011-08-16

    We report a method for synthesizing three distinct type II 3D ZnO/ZnSe heterostructures through simple solution-based surface modification reactions in which polycrystalline ZnSe nanoparticles formed on the surfaces of single-crystalline ZnO building blocks of 3D superstructures. The experimental results suggested a possible formation mechanism for these heterostructures. The formation of the ZnO/ZnSe heterostructures was assumed to result from a dissolution-recrystallization mechanism. The optical properties of the 3D ZnO/ZnSe heterostructures were probed by UV-vis diffuse reflectance spectroscopy. The 3D ZnO/ZnSe heterostructures exhibited absorption in the visible spectral region. The visible photocatalytic activities of 3D ZnO/ZnSe heterostructures were much higher than those of the 3D pure ZnO structures. The activities of the 3D ZnO/ZnSe heterostructures varied according to the structures under visible light. The morphologies and exposed crystal faces of pure ZnO building blocks prior to surface modification had a significant effect on the visible light photocatalytic processes of ZnO/ZnSe heterostructures after surface modification.

  15. Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

    DOE PAGES

    Lin, Yung-Chen; Kim, Dongheun; Li, Zhen; ...

    2016-12-14

    Here we report on strain-induced structural defect formation in core Si nanowire of Si/Ge core/shell nanowire heterostructure and influences of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only Ge shell region or in both Ge shell and Si core regions and is associated with the increase of the shell volume fraction. Themore » relax of misfit strain in [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of cross-over defect formation is of great importance for the understanding of heteroepitaxy in radial heterostructures at nanoscale and building the three dimensional heterostructures for the various applications. In addition, the effect of the defect formation on nanomaterial’s functionality is investigated by electrochemical performance test. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.« less

  16. Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures.

    PubMed

    Lin, Yung-Chen; Kim, Dongheun; Li, Zhen; Nguyen, Binh-Minh; Li, Nan; Zhang, Shixiong; Yoo, Jinkyoung

    2017-01-19

    We report on strain-induced structural defect formation in core Si nanowires of a Si/Ge core/shell nanowire heterostructure and the influence of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in the Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only the Ge shell region or in both the Ge shell and Si core regions and is associated with the increase of the shell volume fraction. The relaxation of the misfit strain in the [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of crossover of defect formation is of great importance for understanding heteroepitaxy in radial heterostructures at the nanoscale and for building three dimensional heterostructures for the various applications. Furthermore, the effect of the defect formation on the nanomaterial's functionality is investigated using electrochemical performance tests. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.

  17. Charge transfer in crystalline germanium/monolayer MoS2 heterostructures prepared by chemical vapor deposition.

    PubMed

    Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; Chen, Renjie; Pete, Doug; Kar, Swastik; Zhu, Jian-Xin; Gupta, Gautam; Mohite, Aditya; Yoo, Jinkyoung

    2016-11-10

    Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. Recently, 2D/2D heterostructures have opened up new research areas. However, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here we report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.

  18. Universal chitosan-assisted synthesis of Ag-including heterostructured nanocrystals for label-free in situ SERS monitoring.

    PubMed

    Cai, Kai; Xiao, Xiaoyan; Zhang, Huan; Lu, Zhicheng; Liu, Jiawei; Li, Qin; Liu, Chen; Foda, Mohamed F; Han, Heyou

    2015-12-07

    A universal chitosan-assisted method was developed to synthesize various Ag-including heterostructured nanocrystals, in which chelation probably plays a vital role. The as-prepared Ag/Pd heterostructured nanocrystals show outstanding properties when used as bifunctional nanocomposites in label-free in situ SERS monitoring of Pd-catalyzed reaction.

  19. Evolution of electron spin polarization in semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Pershin, Yuriy; Privman, Vladimir

    2004-03-01

    Last years theoretical and experimental investigations of electron spin-related effects in semiconductor heterostructures have received much consideration because of idea to create a semiconductor device based on the manipulation of electron spin. High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study possibilities to increase electron spin relaxation time by different means in systems where the D'yakonov-Perel' relaxation mechanism is dominant. Specifically, we show that the electron spin relaxation time in a two-dimensional electron gas with an antidote lattice increases exponentially with antidote radius for certain values of parameters. In another approach, we propose to use electron spin polarization having non-homogeneous direction of spin polarization vector in operation of a spintronic device. It is found that that the electron spin relaxation time essentially depends on the initial spin polarization distribution. This effect has its origin in the coherent spin precession of electrons diffusing in the same direction. We predict a long spin relaxation time of a novel structure: a spin coherence standing wave and discuss its experimental realization.

  20. Sequence of hole resonances in complex oxide heterostructures.

    PubMed

    Smadici, S; Logvenov, G; Bozovic, I; Abbamonte, P

    2014-04-16

    Resonant soft x-ray scattering measurements at the O K edge on Sr2CuO4-ν/La2NiO4+δ (SCO/LNO) complex oxide superlattices show resonances for holes in the two constituent layers, in a sequence of energy levels. The observation of well defined resonances, on a superlattice with layers one unit cell thick, indicates that the resonance energy is largely unaffected by atoms outside a cluster extending half a unit cell along the c axis, consistent with calculations for bulk materials. Comparison to measurements on related superlattices confirms that the order of resonances at the O K edge reflects the order of hole ground-state energies in the heterostructure buried layers. For the SCO/LNO superlattices, the measurements show that the ground-state energies remain different in very thin SCO and LNO layers, which is a contributing factor when considering electronic reconstruction at interfaces, in addition to the areal density of ionic charges in the atomic planes. Different hole energy levels in the SCO/LNO superlattice also imply that holes do not spread into SCO from LNO layers.