Inorganic Substrates and Encapsulation Layers for Transient Electronics

DTIC Science & Technology

2014-07-01

surface oxidation of the nitrides, the measurements were conducted shortly after oxide removal in buffered oxide etchant (BOE) 6:1 (Transene Company Inc...values for the time-dependent dissolution of thermally grown SiO2 (dry oxidation) in buffer solutions (black, pH 7.4; red, pH 8; blue, pH 10...22 5.1.3 Contractor will Identify and Measure Key Performance Characteristics of Candidate Metal Conductive Layers for

Low voltage solid-state lateral coloration electrochromic device

DOEpatents

Tracy, C.E.; Benson, D.K.; Ruth, M.R.

1984-12-21

A solid-state transition metal oxide device comprising a plurality of layers having a predisposed orientation including an electrochromic oxide layer. Conductive material including anode and cathode contacts is secured to the device. Coloration is actuated within the electrochromic oxide layer after the application of a predetermined potential between the contacts. The coloration action is adapted to sweep or dynamically extend across the length of the electrochromic oxide layer.

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Method of making dielectric capacitors with increased dielectric breakdown strength

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Unitary plate electrode

NASA Technical Reports Server (NTRS)

Rowlette, John J. (Inventor); Clough, Thomas J. (Inventor); Josefowicz, Jack Y. (Inventor); Sibert, John W. (Inventor)

1985-01-01

The unitary electrode (10) comprises a porous sheet (12) of fiberglass the strands (14) of which contain a coating (16) of conductive tin oxide. The lower portion of the sheet contains a layer (18) of resin and the upper layer (20) contains lead dioxide forming a positive active electrode on an electrolyte-impervious layer. The strands (14) form a continuous conduction path through both layers (16, 18). Tin oxide is prevented from reduction by coating the surface of the plate facing the negative electrode with a conductive, impervious layer resistant to reduction such as a thin film (130) of lead or graphite filled resin adhered to the plate with a layer (31) of conductive adhesive. The plate (10) can be formed by casting a molten resin from kettle (60) onto a sheet of glass wool (56) overlying a sheet of lead foil and then applying positive active paste from hopper (64) into the upper layer (68). The plate can also be formed by passing an assembly of a sheet ( 80) of resin, a sheet (86) of sintered glass and a sheet (90) of lead between the nip (92) of heated rollers (93, 95) and then filling lead oxide into the pores (116) of the upper layer (118).

Fabrication of Aluminum-Based Thermal Radiation Plate for Thermoelectric Module Using Aluminum Anodic Oxidization and Copper Electroplating.

PubMed

Choi, Yi Taek; Bae, Sung Hwa; Son, Injoon; Sohn, Ho Sang; Kim, Kyung Tae; Ju, Young-Wan

2018-09-01

In this study, electrolytic etching, anodic oxidation, and copper electroplating were applied to aluminum to produce a plate on which a copper circuit for a thermoelectric module was formed. An oxide film insulating layer was formed on the aluminum through anodic oxidation, and platinum was coated by sputtering to produce conductivity. Finally, copper electroplating was performed directly on the substrate. In this structure, the copper plating layer on the insulating layer served as a conductive layer in the circuit. The adhesion of the copper plating layer was improved by electrolytic etching. As a result, the thermoelectric module fabricated in this study showed excellent adhesion and good insulation characteristics. It is expected that our findings can contribute to the manufacture of plates applicable to thermoelectric modules with high dissipation performance.

Experimental and Modeling Studies on the Microstructures and Properties of Oxidized Aluminum Nitride Ceramic Substrates

NASA Astrophysics Data System (ADS)

Cao, Ye; Xu, Haixian; Zhan, Jun; Zhang, Hao; Wei, Xin; Wang, Jianmin; Cui, Song; Tang, Wenming

2018-05-01

Oxidation of aluminum nitride (AlN) ceramic substrates doped with 2 wt.% Y2O3 was performed in air at temperatures ranging from 1000 to 1300 °C for various lengths of time. Microstructure, bending strength, and thermal conductivity of the oxidized AlN substrates were studied experimentally and also via mathematical models. The results show that the oxide layer formed on the AlN substrates is composed of α-Al2O3 nanocrystallines and interconnected micropores. Longitudinal and transverse cracks are induced in the oxide layer under tensile and shear stresses, respectively. Intergranular oxidation of the AlN grains close to the oxide layer/AlN interface also occurs, leading to widening and cracking of the AlN grain boundaries. These processes result in the monotonous degradation of bending strength and thermal conductivity of the oxidized AlN substrates. Two mathematic models concerning these properties of the oxidized AlN substrates versus the oxide layer thickness were put forward. They fit well with the experimental results.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2000-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2001-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Method for producing highly conformal transparent conducting oxides

DOEpatents

Elam, Jeffrey W.; Mane, Anil U.

2016-07-26

A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Yu; Meng, Dechao; Wang, Jianlin

2015-07-06

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high qualitymore » Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.« less

Low voltage solid-state lateral coloration electrochromic device

DOEpatents

Tracy, C. Edwin; Benson, David K.; Ruth, Marta R.

1987-01-01

A solid-state transition metal oxide device comprising a plurality of lay having a predisposed orientation including an electrochromic oxide layer. Conductive material including anode and cathode contacts is secured to the device. Coloration is actuated within the electrochromic oxide layer after the application of a predetermined potential between the contacts. The coloration action is adapted to sweep or dynamically extend across the length of the electrochromic oxide layer.

Graphene interfaced perovskite solar cells: Role of graphene flake size

NASA Astrophysics Data System (ADS)

Sakorikar, Tushar; Kavitha, M. K.; Tong, Shi Wun; Vayalamkuzhi, Pramitha; Loh, Kian Ping; Jaiswal, Manu

2018-04-01

Graphene interfaced inverted planar heterojunction perovskite solar cells are fabricated by facile solution method and studied its potential as hole conducting layer. Reduced graphene oxide (rGO) with small and large flake size and Polyethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS) are utilized as hole conducting layers in different devices. For the solar cell employing PEDOT:PSS as hole conducting layer, 3.8 % photoconversion efficiency is achieved. In case of solar cells fabricated with rGO as hole conducting layer, the efficiency of the device is strongly dependent on flake size. With all other fabrication conditions kept constant, the efficiency of graphene-interfaced solar cell improves by a factor of 6, by changing the flake size of graphene oxide. We attribute this effect to uniform coverage of graphene layer and improved electrical percolation network.

Oxidation-Resistant Coating For Bipolar Lead/Acid Battery

NASA Technical Reports Server (NTRS)

Bolstad, James J.

1993-01-01

Cathode side of bipolar substrate coated with nonoxidizable conductive layer. Coating prepared as water slurry of aqueous dispersion of polyethylene copolymer plus such conductive fillers as tin oxide, titanium, tantalum, or tungsten oxide. Applied easily to substrate of polyethylene carbon plastic. As slurry dries, conductive, oxidation-resistant coating forms on positive side of substrate.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Solid-state membrane module

DOEpatents

Gordon, John Howard [Salt Lake City, UT; Taylor, Dale M [Murray, UT

2011-06-07

Solid-state membrane modules comprising at least one membrane unit, where the membrane unit has a dense mixed conducting oxide layer, and at least one conduit or manifold wherein the conduit or manifold comprises a dense layer and at least one of a porous layer and a slotted layer contiguous with the dense layer. The solid-state membrane modules may be used to carry out a variety of processes including the separating of any ionizable component from a feedstream wherein such ionizable component is capable of being transported through a dense mixed conducting oxide layer of the membrane units making up the membrane modules. For ease of construction, the membrane units may be planar.

Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts

NASA Technical Reports Server (NTRS)

Porter, W. A.; Parker, D. L.

1976-01-01

Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.

Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trifonov, A. S., E-mail: trifonov.artem@phys.msu.ru; Physics Faculty, Lomonosov Moscow State University, Moscow 119991; Lubenchenko, A. V.

2015-03-28

Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of themore » alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbO{sub x} top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb{sub 2}O{sub 5}, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb{sub 2}O{sub 5} interface providing p-type conductivity.« less

Battery plate containing filler with conductive coating

NASA Technical Reports Server (NTRS)

Rowlette, John J. (Inventor)

1986-01-01

The plate (10) comprises a matrix or binder resin phase (12) in which is dispersed particulate, conductive tin oxide such as tin oxide coated glass fibers (14). A monopolar plate (11) is prepared by coating a layer (18) of electrolytically active material onto a surface of the plate (10). Tin oxide is prevented from reduction by coating a surface of the plate (10) with a conductive, impervious layer resistant to reduction such as a thin film (22) of lead adhered to the plate with a layer (21) of conductive adhesive. The plate (10) can be formed by casting a molten dispersion from mixer (36) onto a sheet (30) of lead foil or by passing an assembly of a sheet (41) of resin, a sheet (43) of fiberglass and a sheet (45) of lead between the nip of heated rollers (48, 50).

Method for forming porous platinum films

DOEpatents

Maya, Leon

2000-01-01

A method for forming a platinum film includes providing a substrate, sputtering a crystalline platinum oxide layer over at least a portion of the substrate, and reducing the crystalline platinum oxide layer to form the platinum film. A device includes a non-conductive substrate and a platinum layer having a density of between about 2 and 5 g/cm.sup.3 formed over at least a portion of the non-conductive substrate. The platinum films produced in accordance with the present invention provide porous films suitable for use as electrodes, yet require few processing steps. Thus, such films are less costly. Such films may be formed on both conductive and non-conductive substrates. While the invention has been illustrated with platinum, other metals, such as noble metals, that form a low density oxide when reactively sputtered may also be used.

Battery plate containing filler with conductive coating

NASA Technical Reports Server (NTRS)

Rowlette, John J. (Inventor)

1985-01-01

The plate (10) comprises a matrix or binder resin phase (12) in which is dispersed particulate, conductive tin oxide such as tin oxide coated glass fibers (14). A monopolar plate (11) is prepared by coating a layer (18) of electrolytically active material onto a surface of the plate (10). Tin oxide is prevented from reduction by coating a surface of the plate (10) with a conductive, impervious layer resistant to reduction such as a thin film (22) of lead adhered to the plate with a layer (21) of conductive adhesive. The plate (10) can be formed by casting a molten dispersion from mixer (36) onto a sheet (30) of lead foil or by passing an assembly of a sheet (41) of resin, a sheet (43) of fiberglass and a sheet (45) of lead between the nip of heated rollers (48, 50).

Transparent conducting oxides: A δ-doped superlattice approach

PubMed Central

Cooper, Valentino R.; Seo, Sung S. Ambrose; Lee, Suyoun; Kim, Jun Sung; Choi, Woo Seok; Okamoto, Satoshi; Lee, Ho Nyung

2014-01-01

Metallic states appearing at interfaces between dissimilar insulating oxides exhibit intriguing phenomena such as superconductivity and magnetism. Despite tremendous progress in understanding their origins, very little is known about how to control the conduction pathways and the distribution of charge carriers. Using optical spectroscopic measurements and density-functional theory (DFT) simulations, we examine the effect of SrTiO3 (STO) spacer layer thickness on the optical transparency and carrier distribution in La δ-doped STO superlattices. We experimentally observe that these metallic superlattices remain highly transparent to visible light; a direct consequence of the appropriately large gap between the O 2p and Ti 3d states. In superlattices with relatively thin STO layers, we predict that three-dimensional conduction would occur due to appreciable overlap of quantum mechanical wavefunctions between neighboring δ-doped layers. These results highlight the potential for using oxide heterostructures in optoelectronic devices by providing a unique route for creating novel transparent conducting oxides. PMID:25109668

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCO5) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCO5, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanismsmore » associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.« less

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

NASA Astrophysics Data System (ADS)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

Observations on the oxidation of Mn-modified Ni-base Haynes 230 alloy under SOFC exposure conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Z Gary; Xia, Gordon; Stevenson, Jeffry W.

2005-07-01

The commercial Ni-base Haynes 230 alloy (Ni-Cr-Mo-W-Mn) was modified with two increased levels of Mn (1 and 2 wt per cent) and evaluated for its oxidation resistance under simulated SOFC interconnect exposure conditions. Oxidation rate, oxide morphology, oxide conductivity and thermal expansion were measured and compared with commercial Haynes 230. It was observed that additions of higher levels of Mn to the bulk alloy facilitated the formation of a bi-layered oxide scale that was comprised of an outer M3O4 (M=Mn, Cr, Ni) spinel-rich layer at the oxide – gas interface over a Cr2O3-rich sub-layer at the metal – oxide interface.more » The modified alloys showed higher oxidation rates and the formation of thicker oxide scales compared to the base alloy. The formation of a spinel-rich top layer improved the scale conductivity, especially during the early stages of the oxidation, but the higher scale growth rate resulted in an increase in the area-specific electrical resistance over time. Due to their face-centered cubic crystal structure, both commercial and modified alloys demonstrated a coefficient of thermal expansion that was higher than that of typical anode-supported and electrolyte-supported SOFCs.« less

Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

Fundamental Studies on Confinement Effects in Ionic Conduction and Inversion Layers in 2-D Single Crystal Free Standing Oxide Membranes

DTIC Science & Technology

2014-02-14

properties of VO2 films and membranes and compare the results with annealing VO2 films and membranes in hydrogen to provide insight into the doping...2-dimensional free standing membrane with correlated oxides may also lead to new insights into mesoscopic electronic phenomena. Vanadium oxide ( VO2 ...well as for potential applications in switching devices. While studies have been conducted on thin films, hybrid layers of VO2 supported on other

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

NASA Astrophysics Data System (ADS)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance

NASA Astrophysics Data System (ADS)

Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K.

2005-05-01

We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free layer, the MR ratio was increased while maintaining a small area resistance product (RA). The cross-sectional high-resolution transmission electron microscopy image of the sample with RA =380mΩμm2, ΔRA =16mΩμm2, and MR ratio=4.3% showed that an amorphous oxide layer is a main part of the NOL that blocks the electron conduction perpendicular to plane. Some parts of the NOL are punched through crystalline, metallic channels having a diameter of a few nanometers, which are thought to work as nanoconstricted electron conduction paths between the pinned layer and the free layer. Nano-energy-dispersive-x-ray-spectrum analysis also showed that Cu is enriched in the metallic channels, whereas Al is enriched in the amorphous oxide region, indicating that the metallic channel is made of Cu and the oxide is made of Al2O3. The nanoconstricted structure with good segregation between the metallic channel and the oxide layer enables us to realize a large MR ratio in CCP-CPP spin valves.

Ternary Oxides in the TiO2-ZnO System as Efficient Electron-Transport Layers for Perovskite Solar Cells with Efficiency over 15.

PubMed

Yin, Xiong; Xu, Zhongzhong; Guo, Yanjun; Xu, Peng; He, Meng

2016-11-02

Perovskite solar cells, which utilize organometal-halide perovskites as light-harvesting materials, have attracted great attention due to their high power conversion efficiency (PCE) and potentially low cost in fabrication. A compact layer of TiO 2 or ZnO is generally applied as electron-transport layer (ETL) in a typical perovskite solar cell. In this study, we explored ternary oxides in the TiO 2 -ZnO system to find new materials for the ETL. Compact layers of titanium zinc oxides were readily prepared on the conducting substrate via spray pyrolysis method. The optical band gap, valence band maximum and conduction band minimum of the ternary oxides varied significantly with the ratio of Ti to Zn, surprisingly, in a nonmonotonic way. When a zinc-rich ternary oxide was applied as ETL for the device, a PCE of 15.10% was achieved, comparable to that of the device using conventional TiO 2 ETL. Interestingly, the perovskite layer deposited on the zinc-rich ternary oxide is stable, in sharp contrast with that fabricated on a ZnO layer, which will turn into PbI 2 readily when heated. These results indicate that potentially new materials with better performance can be found for ETL of perovskite solar cells in ternary oxides, which deserve more exploration.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Ethanol gas sensing performance of high-dimensional fuzz metal oxide nanostructure

NASA Astrophysics Data System (ADS)

Ibano, Kenzo; Kimura, Yoshihiro; Sugahara, Tohru; Lee, Heun Tae; Ueda, Yoshio

2018-04-01

Gas sensing ability of the He plasma induced fiber-like nanostructure, so-called fuzz structure, was firstly examined. A thin Mo layer deposited on a quartz surface was irradiated by He plasma to form the fuzz structure and oxidized by annealing in a quartz furnace. Electric conductivity of the fuzz Mo oxide layer was then measured through the Au electrodes deposited on the layer. Changes in electric conductivity by C2H5OH gas flow were examined as a function of temperature from 200 to 400 °C. Improved sensitivities were observed for the specimens after a fuzz nanostructure formation. However, the sensor developed in this study showed lower sensitivities than previously reported MoO3 nano-rod sensor, further optimization of oxidation is needed to improve the sensitivity.

Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz

This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperaturesmore » (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.« less

Nanoscale Probing of Electrical Signals in Biological Systems

DTIC Science & Technology

2012-03-18

Membranes Anodized aluminum oxide ( AAO ) is an ideal prototype substrate for studying ion transport through nanoporous membranes . For optimal...electrochemical microscopy, scanning ion conductance microscopy, nanoporous membranes , anodized aluminum oxide , atomic layer deposition, focused ion beam...capacity. This approach utilizes atomic layer deposition (ALD) of a thin conformal Ir film into a nanoporous anodized aluminum oxide (

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

NASA Astrophysics Data System (ADS)

Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C.; van der Zant, H. S. J.

2016-07-01

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10-4 G0 (1 G0 = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

Multi-layer micro/nanofluid devices with bio-nanovalves

DOEpatents

Li, Hao; Ocola, Leonidas E.; Auciello, Orlando H.; Firestone, Millicent A.

2013-01-01

A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching.

PubMed

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-08

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (10 5 ) with better endurance (∼2000 cycles) and longer data retention (10 4 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Solid oxide fuel cell operable over wide temperature range

DOEpatents

Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

2001-01-01

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

Interfacial material for solid oxide fuel cell

DOEpatents

Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

1999-01-01

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

Method of coating an iron-based article

DOE Office of Scientific and Technical Information (OSTI.GOV)

Magdefrau, Neal; Beals, James T.; Sun, Ellen Y.

A method of coating an iron-based article includes a first heating step of heating a substrate that includes an iron-based material in the presence of an aluminum source material and halide diffusion activator. The heating is conducted in a substantially non-oxidizing environment, to cause the formation of an aluminum-rich layer in the iron-based material. In a second heating step, the substrate that has the aluminum-rich layer is heated in an oxidizing environment to oxidize the aluminum in the aluminum-rich layer.

Fretting wear behavior of zirconium alloy in B-Li water at 300 °C

NASA Astrophysics Data System (ADS)

Zhang, Lefu; Lai, Ping; Liu, Qingdong; Zeng, Qifeng; Lu, Junqiang; Guo, Xianglong

2018-02-01

The tangential fretting wear of three kinds of zirconium alloys tube mated with 304 stainless steel (SS) plate was investigated. The tests were conducted in an autoclave containing 300 °C pressurized B-Li water for tube-on-plate contact configuration. The worn surfaces were examined with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and 3D microscopy. The cross-section of wear scar was examined with transmission electron microscope (TEM). The results indicated that the dominant wear mechanism of zirconium alloys in this test condition was delamination and oxidation. The oxide layer on the fretted area consists of outer oxide layer composed of iron oxide and zirconium oxide and inner oxide layer composed of zirconium oxide.

Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

NASA Astrophysics Data System (ADS)

Nam, Bu-il; Park, Jong Seo; Lim, Keon-Hee; Ahn, Yong-keon; Lee, Jinwon; Park, Jun-woo; Cho, Nam-Kwang; Lee, Donggun; Lee, Han-Bo-Ram; Kim, Youn Sang

2017-07-01

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.

Molecular orbital imaging of cobalt phthalocyanine on native oxidized copper layers using STM.

PubMed

Guo, Qinmin; Huang, Min; Qin, Zhihui; Cao, Gengyu

2012-07-01

To observe molecular orbitals using scanning tunneling microscopy, well-ordered oxidized layers on Cu(001) were fabricated to screen the individual adsorbed cobalt phthalocyanine (CoPc) molecules from the electronic influence of the metal surface. Scanning tunneling microscope images of the molecule on this oxidized layer show similarities to the orbital distribution of the free molecule. The good match between the differential conductance mapping images and the calculated charge distribution at energy levels corresponding to the frontier orbitals of CoPc provides more evidence of the screening of the oxidized layer from interactions between the metal surface and supported molecules. Copyright © 2012 Elsevier B.V. All rights reserved.

Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same

DOEpatents

Resnick, Paul J.; Langlois, Eric

2015-12-01

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode

DOEpatents

Resnick, Paul J.; Langlois, Eric

2014-08-26

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Heat-transport mechanisms in molecular building blocks of inorganic/organic hybrid superlattices

NASA Astrophysics Data System (ADS)

Giri, Ashutosh; Niemelä, Janne-Petteri; Tynell, Tommi; Gaskins, John T.; Donovan, Brian F.; Karppinen, Maarit; Hopkins, Patrick E.

2016-03-01

Nanomaterial interfaces and concomitant thermal resistances are generally considered as atomic-scale planes that scatter the fundamental energy carriers. Given that the nanoscale structural and chemical properties of solid interfaces can strongly influence this thermal boundary conductance, the ballistic and diffusive nature of phonon transport along with the corresponding phonon wavelengths can affect how energy is scattered and transmitted across an interfacial region between two materials. In hybrid composites composed of atomic layer building blocks of inorganic and organic constituents, the varying interaction between the phononic spectrum in the inorganic crystals and vibronic modes in the molecular films can provide a new avenue to manipulate the energy exchange between the fundamental vibrational energy carriers across interfaces. Here, we systematically study the heat transfer mechanisms in hybrid superlattices of atomic- and molecular-layer-grown zinc oxide and hydroquinone with varying thicknesses of the inorganic and organic layers in the superlattices. We demonstrate ballistic energy transfer of phonons in the zinc oxide that is limited by scattering at the zinc oxide/hydroquinone interface for superlattices with a single monolayer of hydroquinone separating the thicker inorganic layers. The concomitant thermal boundary conductance across the zinc oxide interfacial region approaches the maximal thermal boundary conductance of a zinc oxide phonon flux, indicative of the contribution of long wavelength vibrations across the aromatic molecular monolayers in transmitting energy across the interface. This transmission of energy across the molecular interface decreases considerably as the thickness of the organic layers are increased.

Advanced materials and design for low temperature SOFCs

DOEpatents

Wachsman, Eric D.; Yoon, Heesung; Lee, Kang Taek; Camaratta, Matthew; Ahn, Jin Soo

2016-05-17

Embodiments of the invention are directed to SOFC with a multilayer structure comprising a porous ceramic cathode, optionally a cathodic triple phase boundary layer, a bilayer electrolyte comprising a cerium oxide comprising layer and a bismuth oxide comprising layer, an anion functional layer, and a porous ceramic anode with electrical interconnects, wherein the SOFC displays a very high power density at temperatures below 700.degree. C. with hydrogen or hydrocarbon fuels. The low temperature conversion of chemical energy to electrical energy allows the fabrication of the fuel cells using stainless steel or other metal alloys rather than ceramic conductive oxides as the interconnects.

A Novel Conductive Mesoporous Layer with a Dynamic Two-Step Deposition Strategy Boosts Efficiency of Perovskite Solar Cells to 20.

PubMed

Sun, Haoxuan; Deng, Kaimo; Zhu, Yayun; Liao, Min; Xiong, Jie; Li, Yanrong; Li, Liang

2018-05-22

Lead halide perovskite solar cells (PSCs) with the high power conversion efficiency (PCE) typically use mesoporous metal oxide nanoparticles as the scaffold and electron-transport layers. However, the traditional mesoporous layer suffers from low electron conductivity and severe carrier recombination. Here, antimony-doped tin oxide nanorod arrays are proposed as novel transparent conductive mesoporous layers in PSCs. Such a mesoporous layer improves the electron transport as well as light utilization. To resolve the common problem of uneven growth of perovskite on rough surface, the dynamic two-step spin coating strategy is proposed to prepare highly smooth, dense, and crystallized perovskite films with micrometer-scale grains, largely reducing the carrier recombination ratio. The conductive mesoporous layer and high-quality perovskite film eventually render the PSC with a remarkable PCE of 20.1% with excellent reproducibility. These findings provide a new avenue to further design high-efficiency PSCs from the aspect of carrier transport and recombination. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bond layer for a solid oxide fuel cell, and related processes and devices

DOEpatents

Wu, Jian; Striker, Todd-Michael; Renou, Stephane; Gaunt, Simon William

2017-03-21

An electrically-conductive layer of material having a composition comprising lanthanum and strontium is described. The material is characterized by a microstructure having bimodal porosity. Another concept in this disclosure relates to a solid oxide fuel cell attached to at least one cathode interconnect by a cathode bond layer. The bond layer includes a microstructure having bimodal porosity. A fuel cell stack which incorporates at least one of the cathode bond layers is also described herein, along with related processes for forming the cathode bond layer.

Method of doping interconnections for electrochemical cells

DOEpatents

Pal, Uday B.; Singhal, Subhash C.; Moon, David M.; Folser, George R.

1990-01-01

A dense, electronically conductive interconnection layer 26 is bonded on a porous, tubular, electronically conductive air electrode structure 16, optionally supported by a ceramic support 22, by (A) forming a layer of oxide particles of at least one of the metals Ca, Sr, Co, Ba or Mg on a part 24 of a first surface of the air electrode 16, (B) heating the electrode structure, (C) applying a halide vapor containing at least lanthanum halide and chromium halide to the first surface and applying a source of oxygen to a second opposite surface of the air electrode so that they contact at said first surface, to cause a reaction of the oxygen and halide and cause a dense lanthanum-chromium oxide structure to grow, from the first electrode surface, between and around the oxide particles, where the metal oxide particles get incoporated into the lanthanum-chromium oxide structure as it grows thicker with time, and the metal ions in the oxide particles diffuse into the bulk of the lanthamum-chromium oxide structure, to provide a dense, top, interconnection layer 26 on top of the air electrode 16. A solid electrolyte layer 18 can be applied to the uncovered portion of the air electrode, and a fuel electrode 20 can be applied to the solid electrolyte, to provide an electrochemical cell 10.

Electrochromic device containing metal oxide nanoparticles and ultraviolet blocking material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Guillermo; Koo, Bonil; Gregoratto, Ivano

An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant. The electrochromic device also includes nanoparticles containing one or more transparent conducting oxide (TCO), a solid state electrolyte, a counter electrode, and at least one protective layer to prevent degradation of the one or more nanostructured transition metal oxide bronze. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

2005-01-01

Thin, transparent layers comprising mats of carbon nanotubes have been proposed for providing lateral (that is, inplane) electrical conductivities for collecting electric currents from the front surfaces of the emitter layers of thin-film solar photovoltaic cells. Traditionally, thin, semitransparent films of other electrically conductive materials (usually, indium tin oxide, zinc oxide, or cadmium sulfide) have been used for this purpose. As in the cases of the traditional semitransparent conductive films, the currents collected by the nanotube layers would, in turn, be further collected by front metal contact stripes. Depending on details of a specific solar-cell design, the layer of carbon nanotubes would be deposited in addition to, or instead of, a semitransparent layer of one of these traditional conductive materials (see figure). The proposal is expected to afford the following advantages: The electrical conductivity of the carbon- nanotube layer would exceed that of the corresponding semitransparent layer of traditional electrically conductive material. The greater electrical conductivity of the carbon-nanotube layer would make it possible to retain adequate lateral electrical conductivity while reducing the thickness of, or eliminating entirely, the traditional semitransparent conductive layer. As a consequence of thinning or elimination of the traditional semitransparent conductive layer, less light would be absorbed, so that more of the incident light would be available for photovoltaic conversion. The greater electrical conductivity of the carbon-nanotube layer would make it possible to increase the distance between front metal contact stripes, in addition to (or instead of) thinning or eliminating the layer of traditional semitransparent conductive material. Consequently, the fraction of solar-cell area shadowed by front metal contact stripes would be reduced again, making more of the incident light available for photovoltaic conversion. The electrical conductivities of individual carbon nanotubes can be so high that the mat of carbon nanotubes could be made sparse enough to be adequately transparent while affording adequate lateral electrical conductivity of the mat as a whole. The thickness of the nanotube layer would be chosen so that the layer would contribute significant lateral electrical conductivity, yet would be as nearly transparent as possible to incident light. A typical thickness for satisfying these competing requirements is expected to lie between 50 and 100 nm. The optimum thickness must be calculated by comparing the lateral electrical conductivity, the distance between front metal stripes, and the amount of light lost by absorption in the nanotube layer.

Catalytic, Conductive Bipolar Membrane Interfaces through Layer-by-Layer Deposition for the Design of Membrane-Integrated Artificial Photosynthesis Systems.

PubMed

McDonald, Michael B; Freund, Michael S; Hammond, Paula T

2017-11-23

In the presence of an electric field, bipolar membranes (BPMs) are capable of initiating water disassociation (WD) within the interfacial region, which can make water splitting for renewable energy in the presence of a pH gradient possible. In addition to WD catalytic efficiency, there is also the need for electronic conductivity in this region for membrane-integrated artificial photosynthesis (AP) systems. Graphene oxide (GO) was shown to catalyze WD and to be controllably reduced, which resulted in electronic conductivity. Layer-by-layer (LbL) film deposition was employed to improve GO film uniformity in the interfacial region to enhance WD catalysis and, through the addition of a conducting polymer in the process, add electronic conductivity in a hybrid film. Three different deposition methods were tested to optimize conducting polymer synthesis with the oxidant in a metastable solution and to yield the best film properties. It was found that an approach that included substrate dipping in a solution containing the expected final monomer/oxidant ratio provided the most predictable film growth and smoothest films (by UV/Vis spectroscopy and atomic force microscopy/scanning electron microscopy, respectively), whereas dipping in excess oxidant or co-spraying the oxidant and monomer produced heterogeneous films. Optimized films were found to be electronically conductive and produced a membrane ohmic drop that was acceptable for AP applications. Films were integrated into the interfacial region of BPMs and revealed superior WD efficiency (≥1.4 V at 10 mA cm -2 ) for thinner films (<10 bilayers≈100 nm) than for either the pure GO catalyst or conducting polymer individually, which indicated that there was a synergistic effect between these materials in the structure configured by the LbL method. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photovoltaic cell

DOEpatents

Gordon, Roy G.; Kurtz, Sarah

1984-11-27

In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

Catalyst containing oxygen transport membrane

DOEpatents

Christie, Gervase Maxwell; Wilson, Jamie Robyn; van Hassel, Bart Antonie

2012-12-04

A composite oxygen transport membrane having a dense layer, a porous support layer and an intermediate porous layer located between the dense layer and the porous support layer. Both the dense layer and the intermediate porous layer are formed from an ionic conductive material to conduct oxygen ions and an electrically conductive material to conduct electrons. The porous support layer has a high permeability, high porosity, and a high average pore diameter and the intermediate porous layer has a lower permeability and lower pore diameter than the porous support layer. Catalyst particles selected to promote oxidation of a combustible substance are located in the intermediate porous layer and in the porous support adjacent to the intermediate porous layer. The catalyst particles can be formed by wicking a solution of catalyst precursors through the porous support toward the intermediate porous layer.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

2004-08-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

Method of bonding a conductive layer on an electrode of an electrochemical cell

DOEpatents

Bowker, J.C.; Singh, P.

1989-08-29

A dense, electronically conductive interconnection layer is bonded onto a porous, tubular, electronically conductive air electrode structure, optionally supported by a ceramic support, by (A) providing an air electrode surface, (B) forming on a selected portion of the electrode surface, without the use of pressure, particles of LaCrO[sub 3] doped with an element selected from the group consisting of Sr, Mg, Ca, Ba, Co, and mixtures thereof, where the particles have a deposit on their surface comprising calcium oxide and chromium oxide; (C) heating the particles with the oxide surface deposit in an oxidizing atmosphere at from 1,300 C to 1,550 C, without the application of pressure, to provide a dense, sintered, interconnection material bonded to the air electrode, where calcium and chromium from the surface deposit are incorporated into the structure of the LaCrO[sub 3]. A solid electrolyte layer can be applied to the uncovered portion of the air electrode, and a fuel electrode can be applied to the solid electrolyte, to provide an electrochemical cell. 4 figs.

Method of bonding a conductive layer on an electrode of an electrochemical cell

DOEpatents

Bowker, Jeffrey C.; Singh, Prabhakar

1989-01-01

A dense, electronically conductive interconnection layer 26 is bonded onto a porous, tubular, electronically conductive air electrode structure 16, optionally supported by a ceramic support 22, by (A) providing an air electrode surface, (B) forming on a selected portion of the electrode surface 24, without the use of pressure, particles of LaCrO.sub.3 doped with an element selected from the group consisting of Sr, Mg, Ca, Ba, Co, and mixtures thereof, where the particles have a deposit on their surface comprising calcium oxide and chromium oxide; (C) heating the particles with the oxide surface deposit in an oxidizing atmosphere at from 1,300.degree. C. to 1,550.degree. C., without the application of pressure, to provide a dense, sintered, interconnection material 26 bonded to the air electrode 16, where calcium and chromium from the surface deposit are incorporated into the structure of the LaCrO.sub.3. A solid electrolyte layer 18 can be applied to the uncovered portion of the air electrode, and a fuel electrode 20 can be applied to the solid electrolyte, to provide an electrochemical cell 10.

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

PubMed Central

2013-01-01

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs. PMID:24295342

Single-Step Electrophoretic Deposition of Non-noble Metal Catalyst Layer with Low Onset Voltage for Ethanol Electro-oxidation.

PubMed

Ahmadi Daryakenari, Ahmad; Hosseini, Davood; Ho, Ya-Lun; Saito, Takumi; Apostoluk, Aleksandra; Müller, Christoph R; Delaunay, Jean-Jacques

2016-06-29

A single-step electrophoretic deposition (EPD) process is used to fabricate catalyst layers which consist of nickel oxide nanoparticles attached on the surface of nanographitic flakes. Magnesium ions present in the colloid charge positively the flake's surface as they attach on it and are also used to bind nanographitic flakes together. The fabricated catalyst layers showed a very low onset voltage (-0.2 V vs Ag/AgCl) in the electro-oxidation of ethanol. To clarify the occurring catalytic mechanism, we performed annealing treatment to produce samples having a different electrochemical behavior with a large onset voltage. Temperature dependence measurements of the layer conductivity pointed toward a charge transport mechanism based on hopping for the nonannealed layers, while the drift transport is observed in the annealed layers. The hopping charge transport is responsible for the appearance of the low onset voltage in ethanol electro-oxidation.

Conducting tin halides with a layered organic-based perovskite structure

NASA Astrophysics Data System (ADS)

Mitzi, D. B.; Feild, C. A.; Harrison, W. T. A.; Guloy, A. M.

1994-06-01

THE discovery1 of high-temperature superconductivity in layered copper oxide perovskites has generated considerable fundamental and technological interest in this class of materials. Only a few other examples of conducting layered perovskites are known; these are also oxides such as (La1-xSrx)n+1 MnnO3n+1 (ref. 2), Lan+1NinO3n+1 (ref. 3) and Ban+1PbnO3n+1 (ref. 4), all of which exhibit a trend from semiconducting to metallic behaviour with increasing number of perovskite layers (n). We report here the synthesis of a family of organic-based layered halide perovskites, (C4H9NH3)2(CH3NH3)n-1Snnl3n+1 which show a similar transition from semiconducting to metallic behaviour with increasing n. The incorporation of an organic modulation layer between the conducting tin iodide sheets potentially provides greater flexibility for tuning the electrical properties of the perovskite sheets, and we suggest that such an approach will prove valuable for exploring the range of transport properties possible with layered perovskites.

Stable aqueous based Cu nanoparticle ink for printing well-defined highly conductive features on a plastic substrate.

PubMed

Jeong, Sunho; Song, Hae Chun; Lee, Won Woo; Lee, Sun Sook; Choi, Youngmin; Son, Wonil; Kim, Eui Duk; Paik, Choon Hoon; Oh, Seok Heon; Ryu, Beyong-Hwan

2011-03-15

With the aim of inkjet printing highly conductive and well-defined Cu features on plastic substrates, aqueous based Cu ink is prepared for the first time using water-soluble Cu nanoparticles with a very thin surface oxide layer. Owing to the specific properties, high surface tension and low boiling point, of water, the aqueous based Cu ink endows a variety of advantages over conventional Cu inks based on organic solvents in printing narrow conductive patterns without irregular morphologies. It is demonstrated how the design of aqueous based ink affects the basic properties of printed conductive features such as surface morphology, microstructure, conductivity, and line width. The long-term stability of aqueous based Cu ink against oxidation is analyzed through an X-ray photoelectron spectroscopy (XPS) based investigation on the evolution of the surface oxide layer in the aqueous based ink.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muthusubramanian, N.; Zant, H. S. J. van der; Galan, E.

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al{sub 2}O{sub 3} thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10{sup −4} G{sub 0} (1 G{sub 0} = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were usedmore » to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.« less

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

High quality transparent conducting oxide thin films

DOEpatents

Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

2012-08-28

A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

Method of forming macro-structured high surface area transparent conductive oxide electrodes

DOEpatents

Forman, Arnold J.; Chen, Zhebo; Jaramillo, Thomas F.

2016-01-05

A method of forming a high surface area transparent conducting electrode is provided that includes depositing a transparent conducting thin film on a conductive substrate, where the transparent conducting thin film includes transparent conductive particles and a solution-based transparent conducting adhesive layer which serves to coat and bind together the transparent conducting particles, and heat treating the transparent conducting adhesion layer on the conductive substrate, where an increased surface area transparent conducting electrode is formed.

Catalyst containing oxygen transport membrane

DOEpatents

Lane, Jonathan A.; Wilson, Jamie R.; Christie, Gervase Maxwell; Petigny, Nathalie; Sarantopoulos, Christos

2017-02-07

A composite oxygen transport membrane having a dense layer, a porous support layer and an intermediate porous layer located between the dense layer and the porous support layer. Both the dense layer and the intermediate porous layer are formed from an ionic conductive material to conduct oxygen ions and an electrically conductive material to conduct electrons. The porous support layer has a high permeability, high porosity, and a microstructure exhibiting substantially uniform pore size distribution as a result of using PMMA pore forming materials or a bi-modal particle size distribution of the porous support layer materials. Catalyst particles selected to promote oxidation of a combustible substance are located in the intermediate porous layer and in the porous support adjacent to the intermediate porous layer. The catalyst particles can be formed by wicking a solution of catalyst precursors through the porous support toward the intermediate porous layer.

Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

DOEpatents

Isenberg, A.O.

1992-04-21

An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO[sub 3], YCrO[sub 3] or LaMnO[sub 3] particles, on a portion of a porous ceramic substrate, (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure between the doped particles, (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles as a contact. 7 figs.

Interconnects for intermediate temperature solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Huang, Wenhua

Presently, one of the principal goals of solid oxide fuel cells (SOFCs) research is to reduce the stack operating temperature to between 600 and 800°C. However, one of the principal technological barriers is the non-availability of a suitable material satisfying all of the stability requirements for the interconnect. In this work two approaches for intermediate temperature SOFC interconnects have been explored. The first approach comprises an interconnect consisting of a bi-layer structure, a p-type oxide (La0.96Sr0.08MnO 2.001/LSM) layer exposed to a cathodic environment, and an n-type oxide (Y0.08Sr0.88Ti0.95Al0.05O 3-delta/YSTA) layer exposed to anodic conditions. Theoretical analysis based on the bi-layer structure has established design criteria to implement this approach. The analysis shows that the interfacial oxygen partial pressure, which determines the interconnect stability, is independent of the electronic conductivities of both layers but dependent on the oxygen ion layer interconnects, the oxygen ion conductivities of LSM and YSTA were measured as a function of temperature and oxygen partial pressure. Based on the measured data, it has been determined that if the thickness of YSTA layer is around 0.1cm, the thickness of LSM layer should be around 0.6 mum in order to maintain the stability of LSM. In a second approach, a less expensive stainless steel interconnect has been studied. However, one of the major concerns associated with the use of metallic interconnects is the development of a semi-conducting or insulating oxide scale and chromium volatility during extended exposure to the SOFC operating environment. Dense and well adhered Mn-Cu spinet oxide coatings were successfully deposited on stainless steel by an electrophoretic deposition (EPD) technique. It was found that the Mn-Cu-O coating significantly reduced the oxidation rate of the stainless steel and the volatility of chromium. The area specific resistance (ASR) of coated Crofer 22 APU is expected to he around 1.2x10 -2Ocm2 after exposure to air at 800°C for 50000 hours. This demonstrates that Crofer 22 APU with CuMn1.8O 4 coating deposited by EPD is suitable for application as interconnects in intermediate temperature SOFCs.

Fluidized reduction of oxides on fine metal powders without sintering

NASA Technical Reports Server (NTRS)

Hayashi, T.

1985-01-01

In the process of reducing extremely fine metal particles (av. particle size or = 1000 angstroms) covered with an oxide layer, the metal particles are fluidized by a gas flow contg. H, heated, and reduced. The method uniformly and easily reduces surface oxide layers of the extremely fine metal particles without causing sintering. The metal particles are useful for magnetic recording materials, conductive paste, powder metallurgy materials, chem. reagents, and catalysts.

Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell

DOEpatents

Isenberg, A.O.

1987-03-10

Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection. 1 fig.

Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell

DOEpatents

Isenberg, Arnold O.

1987-01-01

Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection.

Electrical conductivity of metal powders under pressure

NASA Astrophysics Data System (ADS)

Montes, J. M.; Cuevas, F. G.; Cintas, J.; Urban, P.

2011-12-01

A model for calculating the electrical conductivity of a compressed powder mass consisting of oxide-coated metal particles has been derived. A theoretical tool previously developed by the authors, the so-called `equivalent simple cubic system', was used in the model deduction. This tool is based on relating the actual powder system to an equivalent one consisting of deforming spheres packed in a simple cubic lattice, which is much easier to examine. The proposed model relates the effective electrical conductivity of the powder mass under compression to its level of porosity. Other physically measurable parameters in the model are the conductivities of the metal and oxide constituting the powder particles, their radii, the mean thickness of the oxide layer and the tap porosity of the powder. Two additional parameters controlling the effect of the descaling of the particle oxide layer were empirically introduced. The proposed model was experimentally verified by measurements of the electrical conductivity of aluminium, bronze, iron, nickel and titanium powders under pressure. The consistency between theoretical predictions and experimental results was reasonably good in all cases.

Evaluation of Graphene/WO3 and Graphene/CeO x Structures as Electrodes for Supercapacitor Applications

NASA Astrophysics Data System (ADS)

Chaitoglou, Stefanos; Amade, Roger; Bertran, Enric

2017-12-01

The combination of graphene with transition metal oxides can result in very promising hybrid materials for use in energy storage applications thanks to its intriguing properties, i.e., highly tunable surface area, outstanding electrical conductivity, good chemical stability, and excellent mechanical behavior. In the present work, we evaluate the performance of graphene/metal oxide (WO3 and CeO x ) layered structures as potential electrodes in supercapacitor applications. Graphene layers were grown by chemical vapor deposition (CVD) on copper substrates. Single and layer-by-layer graphene stacks were fabricated combining graphene transfer techniques and metal oxides grown by magnetron sputtering. The electrochemical properties of the samples were analyzed and the results suggest an improvement in the performance of the device with the increase in the number of graphene layers. Furthermore, deposition of transition metal oxides within the stack of graphene layers further improves the areal capacitance of the device up to 4.55 mF/cm2, for the case of a three-layer stack. Such high values are interpreted as a result of the copper oxide grown between the copper substrate and the graphene layer. The electrodes present good stability for the first 850 cycles before degradation.

Mechanical writing of n-type conductive layers on the SrTiO3 surface in nanoscale

PubMed Central

Wang, Yuhang; Zhao, Kehan; Shi, Xiaolan; Li, Geng; Xie, Guanlin; Lai, Xubo; Ni, Jun; Zhang, Liuwan

2015-01-01

The fabrication and control of the conductive surface and interface on insulating SrTiO3 bulk provide a pathway for oxide electronics. The controllable manipulation of local doping concentration in semiconductors is an important step for nano-electronics. Here we show that conductive patterns can be written on bare SrTiO3 surface by controllable doping in nanoscale using the mechanical interactions of atomic force microscopy tip without applying external electric field. The conductivity of the layer is n-type, oxygen sensitive, and can be effectively tuned by the gate voltage. Hence, our findings have potential applications in oxide nano-circuits and oxygen sensors. PMID:26042679

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

Plasmon-induced optical switching of electrical conductivity in porous anodic aluminum oxide films encapsulated with silver nanoparticle arrays.

PubMed

Huang, Chen-Han; Lin, Hsing-Ying; Lau, Ben-Chao; Liu, Chih-Yi; Chui, Hsiang-Chen; Tzeng, Yonhua

2010-12-20

We report on plasmon induced optical switching of electrical conductivity in two-dimensional (2D) arrays of silver (Ag) nanoparticles encapsulated inside nanochannels of porous anodic aluminum oxide (AAO) films. The reversible switching of photoconductivity greatly enhanced by an array of closely spaced Ag nanoparticles which are isolated from each other and from the ambient by thin aluminum oxide barrier layers are attributed to the improved electron transport due to the localized surface plasmon resonance and coupling among Ag nanoparticles. The photoconductivity is proportional to the power, and strongly dependent on the wavelength of light illumination. With Ag nanoparticles being isolated from the ambient environments by a thin layer of aluminum oxide barrier layer of controlled thickness in nanometers to tens of nanometers, deterioration of silver nanoparticles caused by environments is minimized. The electrochemically fabricated nanostructured Ag/AAO is inexpensive and promising for applications to integrated plasmonic circuits and sensors.

Surface modifications of hydrogen storage alloy by heavy ion beams with keV to MeV irradiation energies

NASA Astrophysics Data System (ADS)

Abe, Hiroshi; Tokuhira, Shinnosuke; Uchida, Hirohisa; Ohshima, Takeshi

2015-12-01

This study deals with the effect of surface modifications induced from keV to MeV heavy ion beams on the initial reaction rate of a hydrogen storage alloy (AB5) in electrochemical process. The rare earth based alloys like this sample alloy are widely used as a negative electrode of Ni-MH (Nickel-Metal Hydride) battery. We aimed to improve the initial reaction rate of hydrogen absorption by effective induction of defects such as vacancies, dislocations, micro-cracks or by addition of atoms into the surface region of the metal alloys. Since defective layer near the surface can easily be oxidized, the conductive oxide layer is formed on the sample surface by O+ beams irradiation, and the conductive oxide layer might cause the improvement of initial reaction rate of hydriding. This paper demonstrates an effective surface treatment of heavy ion irradiation, which induces catalytic activities of rare earth oxides in the alloy surface.

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

NASA Astrophysics Data System (ADS)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

Wide-angle light-trapping electrode for photovoltaic cells.

PubMed

Omelyanovich, Mikhail M; Simovski, Constantin R

2017-10-01

In this Letter, we experimentally show that a submicron layer of a transparent conducting oxide that may serve a top electrode of a photovoltaic cell based on amorphous silicon when properly patterned by notches becomes an efficient light-trapping structure. This is so for amorphous silicon thin-film solar cells with properly chosen thicknesses of the active layers (p-i-n structure with optimal thicknesses of intrinsic and doped layers). The nanopatterned layer of transparent conducting oxide reduces both the light reflectance from the photovoltaic cell and transmittance through the photovoltaic layers for normal incidence and for all incidence angles. We explain the physical mechanism of our light-trapping effect, prove that this mechanism is realized in our structure, and show that the nanopatterning is achievable in a rather easy and affordable way that makes our method of solar cell enhancement attractive for industrial adaptations.

Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

DOEpatents

Isenberg, Arnold O.

1992-01-01

An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO.sub.3, YCrO.sub.3 or LaMnO.sub.3 particles (32), on a portion of a porous ceramic substrate (30), (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure (34) between the doped particles (32), (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles (32) as a contact.

Schottky barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1981-01-01

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

The influence of titanium adhesion layer oxygen stoichiometry on thermal boundary conductance at gold contacts

NASA Astrophysics Data System (ADS)

Olson, David H.; Freedy, Keren M.; McDonnell, Stephen J.; Hopkins, Patrick E.

2018-04-01

We experimentally demonstrate the role of oxygen stoichiometry on the thermal boundary conductance across Au/TiOx/substrate interfaces. By evaporating two different sets of Au/TiOx/substrate samples under both high vacuum and ultrahigh vacuum conditions, we vary the oxygen composition in the TiOx layer from 0 ≤ x ≤ 2.85. We measure the thermal boundary conductance across the Au/TiOx/substrate interfaces with time-domain thermoreflectance and characterize the interfacial chemistry with x-ray photoemission spectroscopy. Under high vacuum conditions, we speculate that the environment provides a sufficient flux of oxidizing species to the sample surface such that one essentially co-deposits Ti and these oxidizing species. We show that slower deposition rates correspond to a higher oxygen content in the TiOx layer, which results in a lower thermal boundary conductance across the Au/TiOx/substrate interfacial region. Under the ultrahigh vacuum evaporation conditions, pure metallic Ti is deposited on the substrate surface. In the case of quartz substrates, the metallic Ti reacts with the substrate and getters oxygen, leading to a TiOx layer. Our results suggest that Ti layers with relatively low oxygen compositions are best suited to maximize the thermal boundary conductance.

Graphene: Polymer composites as moisture barrier and charge transport layer toward solar cell applications

NASA Astrophysics Data System (ADS)

Sakorikar, Tushar; Kavitha, M. K.; Tong, Shi Wun; Vayalamkuzhi, Pramitha; Loh, Kian Ping; Jaiswal, Manu

2018-05-01

Graphene: polymer composite based electrically conducting films are realized by a facile solution processable method. Ultraviolet Photoelectron Spectroscopy (UPS) measurements on the composite films, reveal a low work function of reduced graphene oxide (rGO) obtained from hydrazine hydrate reduction of graphene oxide (GO). We suggest that the low work function could potentially make rGO: PMMA composite suitable for electron conducting layer in perovskite solar cells in place of traditionally used expensive PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) layer. Further, we demonstrate from the gravimetric experiments conducted on rGO: PMMA films, that the same coating is also resistant to moisture permeation. This latter property can be used to realize a protective coating layer for perovskite films, which are prone to moisture induced degradation. Thus, dual functionality of rGO-PMMA films is demonstrated towards integration with perovskite solar cells. Architecture of perovskite solar cell based on these concepts is proposed.

Enhancing electrical conductivity of room temperature deposited Sn-doped In2O3 thin films by hematite seed layers

NASA Astrophysics Data System (ADS)

Lohaus, Christian; Steinert, Céline; Deyu, Getnet; Brötz, Joachim; Jaegermann, Wolfram; Klein, Andreas

2018-04-01

Hematite Fe2O3 seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide thin films by room temperature magnetron sputtering. Conductivities of up to σ = 3300 S/cm are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.

Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes

NASA Astrophysics Data System (ADS)

Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.

2016-05-01

The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A-1 and 98.2 lm W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability. Electronic supplementary information (ESI) available: XPS spectra, Raman spectra, sheet resistance and transmittance of graphene films with different numbers of layers and different ozone treatment times, doping effect of MoO3 on graphene and GO/G electrodes, performance of green OLEDs with different graphene anodes, a movie showing the flexibility of device. See DOI: 10.1039/c6nr01649a

Tuning oxidation level, electrical conductance and band gap structure on graphene sheets by cyclic atomic layer reduction technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gu, Si-Yong; Hsieh, Chien-Te; Lin, Tzu-Wei

The present work develops an atomic layer reduction (ALR) method to accurately tune oxidation level, electrical conductance, band-gap structure, and photoluminescence (PL) response of graphene oxide (GO) sheets. The ALR route is carried out at 200 °C within ALR cycle number of 10–100. The ALR treatment is capable of striping surface functionalities (e.g., hydroxyl, carbonyl, and carboxylic groups), producing thermally-reduced GO sheets. The ALR cycle number serves as a controlling factor in adjusting the crystalline, surface chemistry, electrical, optical properties of GO sheets. With increasing the ALR cycle number, ALR-GO sheets display a high crystallinity, a low oxidation level, anmore » improved electrical conductivity, a narrow band gap, and a tunable PL response. Finally, on the basis of the results, the ALR technique offers a great potential for accurately tune electrical and optical properties of carbon materials through the cyclic removal of oxygen functionalities, without any complicated thermal and chemical desorption processes.« less

Tuning oxidation level, electrical conductance and band gap structure on graphene sheets by cyclic atomic layer reduction technique

DOE PAGES

Gu, Si-Yong; Hsieh, Chien-Te; Lin, Tzu-Wei; ...

2018-05-12

The present work develops an atomic layer reduction (ALR) method to accurately tune oxidation level, electrical conductance, band-gap structure, and photoluminescence (PL) response of graphene oxide (GO) sheets. The ALR route is carried out at 200 °C within ALR cycle number of 10–100. The ALR treatment is capable of striping surface functionalities (e.g., hydroxyl, carbonyl, and carboxylic groups), producing thermally-reduced GO sheets. The ALR cycle number serves as a controlling factor in adjusting the crystalline, surface chemistry, electrical, optical properties of GO sheets. With increasing the ALR cycle number, ALR-GO sheets display a high crystallinity, a low oxidation level, anmore » improved electrical conductivity, a narrow band gap, and a tunable PL response. Finally, on the basis of the results, the ALR technique offers a great potential for accurately tune electrical and optical properties of carbon materials through the cyclic removal of oxygen functionalities, without any complicated thermal and chemical desorption processes.« less

Protective interlayer for high temperature solid electrolyte electrochemical cells

DOEpatents

Singh, P.; Vasilow, T.R.; Richards, V.L.

1996-05-14

The invention is comprised of an electrically conducting doped or admixed cerium oxide composition with niobium oxide and/or tantalum oxide for electrochemical devices, characterized by the general formula: Nb{sub x}Ta{sub y}Ce{sub 1{minus}x{minus}y}O{sub 2} where x is about 0.0 to 0.05, y is about 0.0 to 0.05, and x+y is about 0.02 to 0.05, and where x is preferably about 0.02 to 0.05 and y is 0, and a method of making the same is also described. This novel composition is particularly applicable in forming a protective interlayer of a high temperature, solid electrolyte electrochemical cell, characterized by a first electrode; an electrically conductive interlayer of niobium and/or tantalum doped cerium oxide deposited over at least a first portion of the first electrode; an interconnect deposited over the interlayer; a solid electrolyte deposited over a second portion of the first electrode, the first portion being discontinuous from the second portion; and, a second electrode deposited over the solid electrolyte. The interlayer is characterized as being porous and selected from the group consisting of niobium doped cerium oxide, tantalum doped cerium oxide, and niobium and tantalum doped cerium oxide or admixtures of the same. The first electrode, an air electrode, is a porous layer of doped lanthanum manganite, the solid electrolyte layer is a dense yttria stabilized zirconium oxide, the interconnect layer is a dense, doped lanthanum chromite, and the second electrode, a fuel electrode, is a porous layer of nickel-zirconium oxide cermet. The electrochemical cell can take on a plurality of shapes such as annular, planar, etc. and can be connected to a plurality of electrochemical cells in series and/or in parallel to generate electrical energy. 5 figs.

Solid-state membrane module

DOEpatents

Hinklin, Thomas Ray; Lewinsohn, Charles Arthur

2015-06-30

A module for separating oxygen from an oxygen-containing gaseous mixture comprising planar solid-state membrane units, each membrane unit comprising planar dense mixed conducting oxides layers, planar channel-free porous support layers, and one or more planar intermediate support layers comprising at least one channeled porous support layer. The porosity of the planar channeled porous support layers is less than the porosity of the planar channel-free porous support layers.

Graphene-Based Electrode for a Supercapacitor

NASA Technical Reports Server (NTRS)

Chen, Bin (Inventor); Meyyappan, Meyya (Inventor)

2015-01-01

A supercapacitor electrode mechanism comprising an electrically conductive, porous substrate, having one or more metallic oxides deposited on a first surface and a chemically reduced graphene oxide deposited on a second surface, to thereby provide an electrical double layer associated with the substrate. The substrate may be carbon paper or a similar substance. The layers of the supercapacitor are optionally rolled into an approximately cylindrical structure.

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

NASA Astrophysics Data System (ADS)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

Manganese oxide nanowires wrapped with nitrogen doped carbon layers for high performance supercapacitors.

PubMed

Li, Ying; Mei, Yuan; Zhang, Lin-Qun; Wang, Jian-Hai; Liu, An-Ran; Zhang, Yuan-Jian; Liu, Song-Qin

2015-10-01

In this study, manganese oxide nanowires wrapped by nitrogen-doped carbon layers (MnO(x)@NCs) were prepared by carbonization of poly(o-phenylenediamine) layer coated onto MnO2 nanowires for high performance supercapacitors. The component and structure of the MnO(x)@NCs were controlled through carbonization procedure under different temperatures. Results demonstrated that this composite combined the high conductivity and high specific surface area of nitrogen-doped carbon layers with the high pseudo-capacitance of manganese oxide nanowires. The as-prepared MnO(x)@NCs exhibited superior capacitive properties in 1 M Na2SO4 aqueous solution, such as high conductivity (4.167×10(-3) S cm(-1)), high specific capacitance (269 F g(-1) at 10 mV s(-1)) and long cycle life (134 F g(-1) after 1200 cycles at a scan rate of 50 mV s(-1)). It is reckoned that the present novel hybrid nanowires can serve as a promising electrode material for supercapacitors and other electrochemical devices. Copyright © 2015 Elsevier Inc. All rights reserved.

Characterization of ion beam modified ceramic wear surfaces using Auger electron spectroscopy

NASA Technical Reports Server (NTRS)

Wei, W.; Lankford, J.

1987-01-01

An investigation of the surface chemistry and morphology of the wear surfaces of ceramic material surfaces modified by ion beam mixing has been conducted using Auger electron spectroscopy and secondary electron microscopy. Studies have been conducted on ceramic/ceramic friction and wear couples made up of TiC and NiMo-bonded TiC cermet pins run against Si3N4 and partially stabilized zirconia disc surfaces modified by the ion beam mixing of titanium and nickel, as well as ummodified ceramic/ceramic couples in order to determine the types of surface changes leading to the improved friction and wear behavior of the surface modified ceramics in simulated diesel environments. The results of the surface analyses indicate that the formation of a lubricating oxide layer of titanium and nickel, is responsible for the improvement in ceramic friction and wear behavior. The beneficial effect of this oxide layer depends on several factors, including the adherence of the surface modified layer or subsequently formed oxide layer to the disc substrate, the substrate materials, the conditions of ion beam mixing, and the environmental conditions.

Cellulose nanofibers/reduced graphene oxide flexible transparent conductive paper.

PubMed

Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Li, Jia; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

2013-08-14

The cellulose nanofibers (CNFs) paper exhibit high visible light transmittance, high mechanical strength, and excellent flexibility. Therefore, CNFs paper may be an excellent substrate material for flexible transparent electronic devices. In this paper, we endeavor to prepare CNFs-based flexible transparent conductive paper by layer-by-layer (LbL) assembly using divalent copper ions (Cu(2+)) as the crosslinking agent. The thickness of the reduced graphene oxide (RGO) active layer in the CNFs paper can be controlled by the cycle times of the LbL assembly. CNFs/[RGO]20 paper has the sheet resistances of ∼2.5 kΩ/□, and the transmittance of about 76% at a wavelength of 550 nm. Furthermore, CNFs/[RGO]20 paper inherits the excellent mechanical properties of CNFs paper, and the ultimate strength is about 136 MPa. CNFs-based flexible transparent conductive paper also exhibits excellent electrical stability and flexibility. Copyright © 2013. Published by Elsevier Ltd.

A High-Performing Sulfur-Tolerant and Redox-Stable Layered Perovskite Anode for Direct Hydrocarbon Solid Oxide Fuel Cells

PubMed Central

Ding, Hanping; Tao, Zetian; Liu, Shun; Zhang, Jiujun

2015-01-01

Development of alternative ceramic oxide anode materials is a key step for direct hydrocarbon solid oxide fuel cells (SOFCs). Several lanthanide based layered perovskite-structured oxides demonstrate outstanding oxygen diffusion rate, favorable electronic conductivity, and good oxygen surface exchange kinetics, owing to A-site ordered structure in which lanthanide and alkali-earth ions occupy alternate (001) layers and oxygen vacancies are mainly located in [LnOx] planes. Here we report a nickel-free cation deficient layered perovskite, (PrBa)0.95(Fe0.9Mo0.1)2O5 + δ (PBFM), for SOFC anode, and this anode shows an outstanding performance with high resistance against both carbon build-up and sulfur poisoning in hydrocarbon fuels. At 800 °C, the layered PBFM showed high electrical conductivity of 59.2 S cm−1 in 5% H2 and peak power densities of 1.72 and 0.54 W cm−2 using H2 and CH4 as fuel, respectively. The cell exhibits a very stable performance under a constant current load of 1.0 A cm−2. To our best knowledge, this is the highest performance of ceramic anodes operated in methane. In addition, the anode is structurally stable at various fuel and temperature conditions, suggesting that it is a feasible material candidate for high-performing SOFC anode. PMID:26648509

A High-Performing Sulfur-Tolerant and Redox-Stable Layered Perovskite Anode for Direct Hydrocarbon Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Ding, Hanping; Tao, Zetian; Liu, Shun; Zhang, Jiujun

2015-12-01

Development of alternative ceramic oxide anode materials is a key step for direct hydrocarbon solid oxide fuel cells (SOFCs). Several lanthanide based layered perovskite-structured oxides demonstrate outstanding oxygen diffusion rate, favorable electronic conductivity, and good oxygen surface exchange kinetics, owing to A-site ordered structure in which lanthanide and alkali-earth ions occupy alternate (001) layers and oxygen vacancies are mainly located in [LnOx] planes. Here we report a nickel-free cation deficient layered perovskite, (PrBa)0.95(Fe0.9Mo0.1)2O5 + δ (PBFM), for SOFC anode, and this anode shows an outstanding performance with high resistance against both carbon build-up and sulfur poisoning in hydrocarbon fuels. At 800 °C, the layered PBFM showed high electrical conductivity of 59.2 S cm-1 in 5% H2 and peak power densities of 1.72 and 0.54 W cm-2 using H2 and CH4 as fuel, respectively. The cell exhibits a very stable performance under a constant current load of 1.0 A cm-2. To our best knowledge, this is the highest performance of ceramic anodes operated in methane. In addition, the anode is structurally stable at various fuel and temperature conditions, suggesting that it is a feasible material candidate for high-performing SOFC anode.

A High-Performing Sulfur-Tolerant and Redox-Stable Layered Perovskite Anode for Direct Hydrocarbon Solid Oxide Fuel Cells.

PubMed

Ding, Hanping; Tao, Zetian; Liu, Shun; Zhang, Jiujun

2015-12-09

Development of alternative ceramic oxide anode materials is a key step for direct hydrocarbon solid oxide fuel cells (SOFCs). Several lanthanide based layered perovskite-structured oxides demonstrate outstanding oxygen diffusion rate, favorable electronic conductivity, and good oxygen surface exchange kinetics, owing to A-site ordered structure in which lanthanide and alkali-earth ions occupy alternate (001) layers and oxygen vacancies are mainly located in [LnOx] planes. Here we report a nickel-free cation deficient layered perovskite, (PrBa)0.95(Fe0.9Mo0.1)2O5 + δ (PBFM), for SOFC anode, and this anode shows an outstanding performance with high resistance against both carbon build-up and sulfur poisoning in hydrocarbon fuels. At 800 °C, the layered PBFM showed high electrical conductivity of 59.2 S cm(-1) in 5% H2 and peak power densities of 1.72 and 0.54 W cm(-2) using H2 and CH4 as fuel, respectively. The cell exhibits a very stable performance under a constant current load of 1.0 A cm(-2). To our best knowledge, this is the highest performance of ceramic anodes operated in methane. In addition, the anode is structurally stable at various fuel and temperature conditions, suggesting that it is a feasible material candidate for high-performing SOFC anode.

Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

NASA Astrophysics Data System (ADS)

Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

2016-02-01

We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

PubMed Central

Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

2016-01-01

We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes.

PubMed

Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

2016-02-02

We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

Low temperature reduction of free-standing graphene oxide papers with metal iodides for ultrahigh bulk conductivity.

PubMed

Liu, Chenyang; Hao, Feng; Zhao, Xiaochong; Zhao, Qiancheng; Luo, Songping; Lin, Hong

2014-02-05

Here we report a green and facile route for highly efficient reduction of free-standing graphene oxide (GO) papers with metal iodide aqueous solutions at low cost. The metal iodides (MgI2, AlI3, ZnI2, FeI2) were synthesized directly from metal and iodine powder with water as a catalyzer. An extremely high bulk conductivity of 55088 S/m for reduced graphene oxide (rGO) papers were obtained with FeI2 solution of which pH = 0 at 95°C for 6 hours. The catalytic effect of strong Lewis acid for the promotion of the nucleophilic substitution reaction is responsible for the greatly improved bulk conductivity. Furthermore, it was found that the layer-to-layer distance (dL) and the crystallinity of the rGO papers are regarded as two main factors affecting the bulk conductivity rather than C/O ratio and defect concentration.

Electrochromic window with high reflectivity modulation

DOEpatents

Goldner, Ronald B.; Gerouki, Alexandra; Liu, Te-Yang; Goldner, Mark A.; Haas, Terry E.

2000-01-01

A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, Darrell G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong; Singh, Rakesh K.; Xi, Xiaoxing

2017-12-01

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+δ, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Iron-based alloy and nitridation treatment for PEM fuel cell bipolar plates

DOEpatents

Brady, Michael P [Oak Ridge, TN; Yang, Bing [Oak Ridge, TN; Maziasz, Philip J [Oak Ridge, TN

2010-11-09

A corrosion resistant electrically conductive component that can be used as a bipolar plate in a PEM fuel cell application is composed of an alloy substrate which has 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal being Fe, and a continuous surface layer of chromium nitride and vanadium nitride essentially free of base metal. A oxide layer of chromium vanadium oxide can be disposed between the alloy substrate and the continuous surface nitride layer. A method to prepare the corrosion resistant electrically conductive component involves a two-step nitridization sequence by exposing the alloy to a oxygen containing gas at an elevated temperature, and subsequently exposing the alloy to an oxygen free nitrogen containing gas at an elevated temperature to yield a component where a continuous chromium nitride layer free of iron has formed at the surface.

Photovoltaic devices comprising zinc stannate buffer layer and method for making

DOEpatents

Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

2001-01-01

A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Thermal barrier coating experience in the gas turbine engine

NASA Technical Reports Server (NTRS)

Bose, S.; Demasi-Marcin, J.

1995-01-01

Thermal Barrier Coatings (TBC), provide thermal insulation and oxidation resistance in an environment consisting of hot combustion gases. TBC's consist of a two layer system. The outer ceramic layer provides good thermal insulation due to the low thermal conductivity of the ceramic coatings used, while the inner metallic bond coat layer provides needed oxidation resistance to the underlying superalloy. Pratt & Whitney has over a decade of experience with several generations of TBC systems on turbine airfoils. This paper will focus on the latest TBC field experience along with a proposed durability model.

Subnanometer to nanometer transition metal CO oxidation catalysts

DOEpatents

Vajda, Stefan; Fortunelli, Alessandro; Yasumatsu, Hisato

2017-12-26

The present invention provides a catalyst defined in part by a conductive substrate; a film overlaying a surface of the substrate; and a plurality of metal clusters supported by the layer, wherein each cluster comprises between 8 and 11 atoms. Further provided is a catalyst defined in part by a conductive substrate; a layer overlaying a surface of the substrate; and a plurality of metal clusters supported by the layer, wherein each cluster comprises at least two metals.

Buried Oxide Densification for Low Power, Low Voltage CMOS Applications

NASA Technical Reports Server (NTRS)

Allen, L. P.; Anc, M. J.; Dolan, B.; Jiao, J.; Guss, B.; Seraphin, S.; Liu, S. T.; Jenkins, W.

1998-01-01

Special technology and circuit architecture are of growing interest for implementation of circuits which operate at low supply voltages and consume low power levels without sacrificing performance[1]. Use of thin buried oxide SOI substrates is a primary approach to simultaneously achieve these goals. A significant aspect regarding SIMOX SOI for low voltage, low power applications is the reliability and performance of the thin buried oxide. In addition, when subjected to high total dose irradiation, the silicon islands within the BOX layer of SIMOX can store charges and significantly effect the back channel threshold voltages of devices. Thus, elimination of the islands within the buried oxide (BOX) layer is preferred in order to prevent leakage through these conductive islands and charge build-up within the buried oxide layer. A differential (2-step) ramp rate as applied to full and 100 nm BOX SIMOX was previously reported to play a significant role in the stoichiometry and island formation within the buried layer[2]. This paper focus is on the properties of a thin (120nm) buried oxide as a function of the anneal ramp rate and the temperature of anneal. In this research, we have found an improvement in the buried oxide stoichiometry with the use of a slower, singular ramp rate for specified thin buried oxides, with slower ramp rates and higher temperatures of anneal suggested for reducing the presence of Si islands within the BOX layer.

Modified cermet fuel electrodes for solid oxide electrochemical cells

DOEpatents

Ruka, Roswell J.; Spengler, Charles J.

1991-01-01

An exterior porous electrode (10), bonded to a solid oxygen ion conducting electrolyte (13) which is in contact with an interior electrode (14), contains coarse metal particles (12) of nickel and/or cobalt, having diameters from 3 micrometers to 35 micrometers, where the coarse particles are coated with a separate, porous, multiphase layer (17) containing fine metal particles of nickel and/or cobalt (18), having diameters from 0.05 micrometers to 1.75 micrometers and conductive oxide (19) selected from cerium oxide, doped cerium oxide, strontium titanate, doped strontium titanate and mixtures thereof.

Ag@Ni core-shell nanowire network for robust transparent electrodes against oxidation and sulfurization.

PubMed

Eom, Hyeonjin; Lee, Jaemin; Pichitpajongkit, Aekachan; Amjadi, Morteza; Jeong, Jun-Ho; Lee, Eungsug; Lee, Jung-Yong; Park, Inkyu

2014-10-29

Silver nanowire (Ag NW) based transparent electrodes are inherently unstable to moist and chemically reactive environment. A remarkable stability improvement of the Ag NW network film against oxidizing and sulfurizing environment by local electrodeposition of Ni along Ag NWs is reported. The optical transmittance and electrical resistance of the Ni deposited Ag NW network film can be easily controlled by adjusting the morphology and thickness of the Ni shell layer. The electrical conductivity of the Ag NW network film is increased by the Ni coating via welding between Ag NWs as well as additional conductive area for the electron transport by electrodeposited Ni layer. Moreover, the chemical resistance of Ag NWs against oxidation and sulfurization can be dramatically enhanced by the Ni shell layer electrodeposited along the Ag NWs, which provides the physical barrier against chemical reaction and diffusion as well as the cathodic protection from galvanic corrosion. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

DOE PAGES

Leng, X.; Bozovic, I.; Bollinger, A. T.

2016-08-10

Epitaxial indium tin oxide films have been grown on both LaAlO 3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers amore » pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mäkelä, J., E-mail: jaakko.m.makela@utu.fi, E-mail: pekka.laukkanen@utu.fi, E-mail: rmwallace@utdallas.edu; Tuominen, M.; Yasir, M.

2015-08-10

Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.

Solid oxide electrochemical cell fabrication process

DOEpatents

Dollard, Walter J.; Folser, George R.; Pal, Uday B.; Singhal, Subhash C.

1992-01-01

A method to form an electrochemical cell (12) is characterized by the steps of thermal spraying stabilized zirconia over a doped lanthanum manganite air electrode tube (14) to provide an electrolyte layer (15), coating conductive particles over the electrolyte, pressurizing the outside of the electrolyte layer, feeding halide vapors of yttrium and zirconium to the outside of the electrolyte layer and feeding a source of oxygen to the inside of the electrolyte layer, heating to cause oxygen reaction with the halide vapors to close electrolyte pores if there are any and to form a metal oxide coating on and between the particles and provide a fuel electrode (16).

Ni-BaTiO3-Based Base-Metal Electrode (BME) Ceramic Capacitors for Space Applications

NASA Technical Reports Server (NTRS)

Liu, Donhang; Fetter, Lula; Meinhold, Bruce

2015-01-01

A multi-layer ceramic capacitor (MLCC) is a high-temperature (1350C typical) co-fired ceramic monolithic that is composed of many layers of alternately stacked oxide-based dielectric and internal metal electrodes. To make the dielectric layers insulating and the metal electrode layers conducting, only highly oxidation-resistant precious metals, such as platinum, palladium, and silver, can be used for the co-firing of insulating MLCCs in a regular air atmosphere. MLCCs made with precious metals as internal electrodes and terminations are called precious-metal electrode (PME) capacitors. Currently, all military and space-level applications only address the use of PME capacitors.

Layered method of electrode for solid oxide electrochemical cells

DOEpatents

Jensen, Russell R.

1991-07-30

A process for fabricating a fuel electrode comprising: slurry dipping to form layers which are structurally graded from all or mostly all stabilized zirconia at a first layer, to an outer most layer of substantially all metal powder, such an nickel. Higher performaance fuel electrodes may be achieved if sinter active stabilized zirconia doped for electronic conductivity is used.

Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

PubMed

Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

2015-02-04

In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

Self-aligned periodic Ni nano dots embedded in nano-oxide layer

NASA Astrophysics Data System (ADS)

Doi, M.; Izumi, M.; Kawasaki, S.; Miyake, K.; Sahashi, M.

The Ni nano constriction dots embedded in the Ta-nano-oxide layer (NOL) was prepared by the ion beam sputtering (IBS) method. After the various conditions of the oxidations, the structural analyses of the NOL were performed by RHEED, AES and in situ STM/AFM observations. From the current image of the conductive AFM for NOL, the periodically aligned metallic dots with the size around 5-10 nm were successfully observed. The mechanism of the formation of the self-organized aligned Ni nano constriction dots is discussed from the standpoint of the grain size, the crystal orientation, the preferred oxidation of Ta at the diffused interface.

Stability of Fe-Cr alloy interconnects under CH 4-H 2O atmosphere for SOFCs

NASA Astrophysics Data System (ADS)

Horita, Teruhisa; Xiong, Yueping; Yamaji, Katsuhiko; Sakai, Natsuko; Yokokawa, Harumi

The chemical stability of Fe-Cr alloys (ZMG232 and SUS430) was examined under humidified CH 4 gases at 1073 K to simulate the real anode atmosphere in SOFC operation. Surface microstructure change and oxide scale layer formation were observed on the oxidized Fe-Cr alloy surfaces. The main reaction products were Mn-Cr-(Fe) spinels for both alloys. Secondary ion mass spectrometry (SIMS) was applied to measure the elemental distribution of minor and major elements around the oxide scale/alloy interface. A high concentration of Mn on the oxide scale surface suggested the fast diffusion of Mn in the oxide scale to form the spinels. Annealing in CH 4-H 2O made the oxide scale thicker with duration time on the alloy surface. The parabolic growth rates ( kp) of oxide scale layer were evaluated from the thickness of oxide scales by secondary ion mass spectrometry (SIMS) depth profiles, which were calculated to the following: kp=6.25×10 -6 μm 2/s for SUS430 and kp=4.42×10 -6 μm 2/s for ZMG232. The electrical conductivity of oxidized alloys showed the semi-conductor temperature dependence for both alloys. The electrical conductivity of oxidized ZMG232 alloy was higher than that of oxidized SUS430.

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.

PubMed

Krausmann, Jan; Sanctis, Shawn; Engstler, Jörg; Luysberg, Martina; Bruns, Michael; Schneider, Jörg J

2018-06-20

The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures, comprising alternating polycrystalline indium oxide and zinc oxide layers, are fabricated by a facile atomic layer deposition (ALD) process, enabling the tuning of its electrical properties by precisely controlling the thickness of the individual layers. This subsequently results in enhanced TFT performance for the optimized stacked architecture after mild thermal annealing at temperatures as low as 200 °C. Superior transistor characteristics, resulting in an average field-effect mobility (μ sat. ) of 9.3 cm 2 V -1 s -1 ( W/ L = 500), an on/off ratio ( I on / I off ) of 5.3 × 10 9 , and a subthreshold swing of 162 mV dec -1 , combined with excellent long-term and bias stress stability are thus demonstrated. Moreover, the inherent semiconducting mechanism in such multilayered heterostructures can be conveniently tuned by controlling the thickness of the individual layers. Herein, devices comprising a higher In 2 O 3 /ZnO ratio, based on individual layer thicknesses, are predominantly governed by percolation conduction with temperature-independent charge carrier mobility. Careful adjustment of the individual oxide layer thicknesses in devices composed of stacked layers plays a vital role in the reduction of trap states, both interfacial and bulk, which consequently deteriorates the overall device performance. The findings enable an improved understanding of the correlation between TFT performance and the respective thin-film composition in ALD-based heterostructure oxides.

Fabrication of current confinement aperture structure by transforming a conductive GaN:Si epitaxial layer into an insulating GaOx layer.

PubMed

Lin, Chia-Feng; Lee, Wen-Che; Shieh, Bing-Cheng; Chen, Danti; Wang, Dili; Han, Jung

2014-12-24

We report here a simple and robust process to convert embedded conductive GaN epilayers into insulating GaOx and demonstrate its efficacy in vertical current blocking and lateral current steering in a working LED device. The fabrication processes consist of laser scribing, electrochemical (EC) wet-etching, photoelectrochemical (PEC) oxidation, and thermal oxidization of a sacrificial n(+)-GaN:Si layer. The conversion of GaN is made possible through an intermediate stage of porosification where the standard n-type GaN epilayers can be laterally and selectively anodized into a nanoporous (NP) texture while keeping the rest of the layers intact. The fibrous texture of NP GaN with an average wall thickness of less than 100 nm dramatically increases the surface-to-volume ratio and facilitates a rapid oxidation process of GaN into GaOX. The GaOX aperture was formed on the n-side of the LED between the active region and the n-type GaN layer. The wavelength blueshift phenomena of electroluminescence spectra is observed in the treated aperture-emission LED structure (441.5 nm) when compared to nontreated LED structure (443.7 nm) at 0.1 mA. The observation of aperture-confined electroluminescence from an InGaN LED structure suggests that the NP GaN based oxidation will play an enabling role in the design and fabrication of III-nitride photonic devices.

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

NASA Astrophysics Data System (ADS)

Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

2018-01-01

The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

Plasma electrolytic oxidation of Titanium Aluminides

NASA Astrophysics Data System (ADS)

Morgenstern, R.; Sieber, M.; Grund, T.; Lampke, T.; Wielage, B.

2016-03-01

Due to their outstanding specific mechanical and high-temperature properties, titanium aluminides exhibit a high potential for lightweight components exposed to high temperatures. However, their application is limited through their low wear resistance and the increasing high-temperature oxidation starting from about 750 °C. By the use of oxide ceramic coatings, these constraints can be set aside and the possible applications of titanium aluminides can be extended. The plasma electrolytic oxidation (PEO) represents a process for the generation of oxide ceramic conversion coatings with high thickness. The current work aims at the clarification of different electrolyte components’ influences on the oxide layer evolution on alloy TNM-B1 (Ti43.5Al4Nb1Mo0.1B) and the creation of compact and wear resistant coatings. Model experiments were applied using a ramp-wise increase of the anodic potential in order to show the influence of electrolyte components on the discharge initiation and the early stage of the oxide layer growth. The production of PEO layers with technically relevant thicknesses close to 100 μm was conducted in alkaline electrolytes with varying amounts of Na2SiO3·5H2O and K4P2O7 under symmetrically pulsed current conditions. Coating properties were evaluated with regard to morphology, chemical composition, hardness and wear resistance. The addition of phosphates and silicates leads to an increasing substrate passivation and the growth of compact oxide layers with higher thicknesses. Optimal electrolyte compositions for maximum coating hardness and thickness were identified by statistical analysis. Under these conditions, a homogeneous inner layer with low porosity can be achieved. The frictional wear behavior of the compact coating layer is superior to a hard anodized layer on aluminum.

Composite wire microelectrode and method of making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Isaacs, Hugh S.; Aldykiewicz, Jr., Antonio J.

1996-12-03

A composite wire microelectrode for making electro-chemical measurements, and method of making same. The microelectrode includes an inner conductive sensing wire and an outer tube that is oxidized to form a dielectric, self-healing oxide layer around the sensing wire.

Rapidly curable electrically conductive clear coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowman, Mark P.; Anderson, Lawrence G.; Post, Gordon L.

2018-01-16

Rapidly curable electrically conductive clear coatings are applied to substrates. The electrically conductive clear coating includes to clear layer having a resinous binder with ultrafine non-stoichiometric tungsten oxide particles dispersed therein. The clear coating may be rapidly cured by subjecting the coating to infrared radiation that heats the tungsten oxide particles and surrounding resinous binder. Localized heating increases the temperature of the coating to thereby thermally cure the coating, while avoiding unwanted heating of the underlying substrate.

Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors

NASA Astrophysics Data System (ADS)

Martins, R.; Barquinha, P.; Ferreira, I.; Pereira, L.; Gonçalves, G.; Fortunato, E.

2007-02-01

The role of order and disorder on the electronic performances of n-type ionic oxides such as zinc oxide, gallium zinc oxide, and indium zinc oxide used as active (channel) or passive (drain/source) layers in thin film transistors (TFTs) processed at room temperature are discussed, taking as reference the known behavior observed in conventional covalent semiconductors such as silicon. The work performed shows that while in the oxide semiconductors the Fermi level can be pinned up within the conduction band, independent of the state of order, the same does not happen with silicon. Besides, in the oxide semiconductors the carrier mobility is not bandtail limited and so disorder does not affect so strongly the mobility as it happens in covalent semiconductors. The electrical properties of the oxide films (resistivity, carrier concentration, and mobility) are highly dependent on the oxygen vacancies (source of free carriers), which can be controlled by changing the oxygen partial pressure during the deposition process and/or by adding other metal ions to the matrix. In this case, we make the oxide matrix less sensitive to the presence of oxygen, widening the range of oxygen partial pressures that can be used and thus improving the process control of the film resistivity. The results obtained in fully transparent TFT using polycrystalline ZnO or amorphous indium zinc oxide (IZO) as channel layers and highly conductive poly/nanocrystalline ZGO films or amorphous IZO as drain/source layers show that both devices work in the enhancement mode, but the TFT with the highest electronic saturation mobility and on/off ratio 49.9cm2/Vs and 4.3×108, respectively, are the ones in which the active and passive layers are amorphous. The ZnO TFT whose channel is based on polycrystalline ZnO, the mobility and on/off ratio are, respectively, 26cm2/Vs and 3×106. This behavior is attributed to the fact that the electronic transport is governed by the s-like metal cation conduction bands, not significantly affected by any type of angular disorder promoted by the 2p O states related to the valence band, or small amounts of incorporated metal impurities that lead to a better control of vacancies and of the TFT off current.

p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

PubMed

Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

2015-08-05

Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

Protective interlayer for high temperature solid electrolyte electrochemical cells

DOEpatents

Singh, Prabhakar; Vasilow, Theodore R.; Richards, Von L.

1996-01-01

The invention comprises of an electrically conducting doped or admixed cerium oxide composition with niobium oxide and/or tantalum oxide for electrochemical devices, characterized by the general formula: Nb.sub.x Ta.sub.y Ce.sub.1-x-y O.sub.2 where x is about 0.0 to 0.05, y is about 0.0 to 0.05, and x+y is about 0.02 to 0.05, and where x is preferably about 0.02 to 0.05 and y is 0, and a method of making the same. This novel composition is particularly applicable in forming a protective interlayer of a high temperature, solid electrolyte electrochemical cell (10), characterized by a first electrode (12); an electrically conductive interlayer (14) of niobium and/or tantalum doped cerium oxide deposited over at least a first portion (R) of the first electrode; an interconnect (16) deposited over the interlayer; a solid electrolyte (18) deposited over a second portion of the first electrode, the first portion being discontinuous from the second portion; and, a second electrode (20) deposited over the solid electrolyte. The interlayer (14) is characterized as being porous and selected from the group consisting of niobium doped cerium oxide, tantalum doped cerium oxide, and niobium and tantalum doped cerium oxide or admixtures of the same. The first electrode (12), an air electrode, is a porous layer of doped lanthanum manganite, the solid electrolyte layer (18) is a dense yttria stabilized zirconium oxide, the interconnect layer (16) is a dense, doped lanthanum chromite, and the second electrode (20), a fuel electrode, is a porous layer of nickel-zirconium oxide cermet. The electrochemical cell (10) can take on a plurality of shapes such as annular, planar, etc. and can be connected to a plurality of electrochemical cells in series and/or in parallel to generate electrical energy.

The effect of a Ta oxygen scavenger layer on HfO 2-based resistive switching behavior: Thermodynamic stability, electronic structure, and low-bias transport

DOE PAGES

Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; ...

2016-02-15

Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer'' between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO 2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces themore » Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high-and low-resistance states. Lastly, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO 2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.« less

Electrically Conductive Polyimide Films Containing Gold Surface

NASA Technical Reports Server (NTRS)

Caplan, Maggie L.; Stoakley, Diane M.; St. Clair, Anne K.

1994-01-01

Polyimide films exhibiting high thermo-oxidative stability and including electrically conductive surface layers containing gold made by casting process. Many variations of basic process conditions, ingredients, and sequence of operations possible, and not all resulting versions of process yield electrically conductive films. Gold-containing layer formed on film surface during cure. These metallic gold-containing polyimides used in film and coating applications requiring electrical conductivity, high reflectivity, exceptional thermal stability, and/or mechanical integrity. They also find commercial potential in areas ranging from thin films for satellite antennas to decorative coatings and packaging.

Method of Fabricating Schottky Barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1982-01-01

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Multi-layered proton-conducting electrolyte

DOEpatents

Lee, Tae H.; Dorris, Stephen E.; Balachandran, Uthamalingam

2017-06-27

The present invention provides a multilayer anode/electrolyte assembly comprising a porous anode substrate and a layered solid electrolyte in contact therewith. The layered solid electrolyte includes a first dense layer of yttrium-doped barium zirconate (BZY), optionally including another metal besides Y, Ba, and Zr (e.g., a lanthanide metal such as Pr) on one surface thereof, a second dense layer of yttrium-doped barium cerate (BCY), and an interfacial layer between and contacting the BZY and BCY layers. The interfacial layer comprises a solid solution of the BZY and BCY electrolytes. The porous anode substrate comprises at least one porous ceramic material that is stable to carbon dioxide and water (e.g., porous BZY), as well as an electrically conductive metal and/or metal oxide (e.g., Ni, NiO, and the like).

Streaming potential method for characterizing interaction of electrical double layers between rice roots and Fe/Al oxide-coated quartz in situ.

PubMed

Liu, Zhao-Dong; Wang, Hai-Cui; Li, Jiu-Yu; Xu, Ren-Kou

2017-10-01

The interaction between rice roots and Fe/Al oxide-coated quartz was investigated through zeta potential measurements and column leaching experiments in present study. The zeta potentials of rice roots, Fe/Al oxide-coated quartz, and the binary systems containing rice roots and Fe/Al oxide-coated quartz were measured by a specially constructed streaming potential apparatus. The interactions between rice roots and Fe/Al oxide-coated quartz particles were evaluated/deduced based on the differences of zeta potentials between the binary systems and the single system of rice roots. The zeta potentials of the binary systems moved in positive directions compared with that of rice roots, suggesting that there were overlapping of diffuse layers of electric double layers on positively charged Fe/Al oxide-coated quartz and negatively charged rice roots and neutralization of positive charge on Fe/Al oxide-coated quartz with negative charge on rice roots. The greater amount of positive charges on Al oxide led to the stronger interaction of Al oxide-coated quartz with rice roots and the more shift of zeta potential compared with Fe oxide. The overlapping of diffuse layers on Fe/Al oxide-coated quartz and rice roots was confirmed by column leaching experiments. The greater overlapping of diffuse layers on Al oxide and rice roots led to more simultaneous adsorptions of K + and NO 3 - and greater reduction in leachate electric conductivity when the column containing Al oxide-coated quartz and rice roots was leached with KNO 3 solution, compared with the columns containing rice roots and Fe oxide-coated quartz or quartz. When the KNO 3 solution was replaced with deionized water to flush the columns, more K + and NO 3 - were desorbed from the binary system containing Al oxide-coated quartz and rice roots than from other two binary systems, suggesting that the stronger electrostatic interaction between Al oxide and rice roots promoted the desorption of K + and NO 3 - from the binary system and enhanced overlapping of diffuse layers on these oppositely charged surfaces compared with other two binary systems. In conclusion, the overlapping of diffuse layers occurred between positively charged Fe/Al oxides and rice roots, which led to neutralization of opposite charge and affected adsorption and desorption of ions onto and from the charged surfaces of Fe/Al oxides and rice roots.

Formation of ZrO{sub 2} in coating on Mg–3 wt.%Al–1 wt.%Zn alloy via plasma electrolytic oxidation: Phase and structure of zirconia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kang Min; Kim, Yeon Sung; Yang, Hae Woong

2015-01-15

An investigation of the coating structure formed on Mg–3 wt.%Al–1 wt.%Zn alloy sample subjected to plasma electrolytic oxidation was examined by field-emission transmission electron microscopy. The plasma electrolytic oxidation process was conducted in a phosphoric acid electrolyte containing K{sub 2}ZrF{sub 6} for 600 s. Microstructural observations showed that the coating consisting of MgO, MgF{sub 2}, and ZrO{sub 2} phases was divided into three distinctive parts, the barrier, intermediate, and outer layers. Nanocrystalline MgO and MgF{sub 2} compounds were observed mainly in the barrier layer of ~ 1 μm thick near to the substrate. From the intermediate to outer layers, variousmore » ZrO{sub 2} polymorphs appeared due to the effects of the plasma arcing temperature on the phase transition of ZrO{sub 2} compounds during the plasma electrolytic oxidation process. In the outer layer, MgO compound grew in the form of a dendrite-like structure surrounded by cubic ZrO{sub 2}. - Highlights: • The barrier layer containing MgO and MgF{sub 2} was observed near to the Mg substrate. • In the intermediate layer, m-, t-, and o-ZrO{sub 2} compounds were additionally detected. • The outer layer contained MgO with the dendrite-like structure surrounded by c-ZrO{sub 2}. • The grain sizes of compounds in oxide layer increased from barrier to outer layer.« less

High-efficiency exfoliation of large-area mono-layer graphene oxide with controlled dimension.

PubMed

Park, Won Kyu; Yoon, Yeojoon; Song, Young Hyun; Choi, Su Yeon; Kim, Seungdu; Do, Youngjin; Lee, Junghyun; Park, Hyesung; Yoon, Dae Ho; Yang, Woo Seok

2017-11-27

In this work, we introduce a novel and facile method of exfoliating large-area, single-layer graphene oxide using a shearing stress. The shearing stress reactor consists of two concentric cylinders, where the inner cylinder rotates at controlled speed while the outer cylinder is kept stationary. We found that the formation of Taylor vortex flow with shearing stress can effectively exfoliate the graphite oxide, resulting in large-area single- or few-layer graphene oxide (GO) platelets with high yields (>90%) within 60 min of reaction time. Moreover, the lateral size of exfoliated GO sheets was readily tunable by simply controlling the rotational speed of the reactor and reaction time. Our approach for high-efficiency exfoliation of GO with controlled dimension may find its utility in numerous industrial applications including energy storage, conducting composite, electronic device, and supporting frameworks of catalyst.

Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition

NASA Astrophysics Data System (ADS)

Tolosa, Maria D. Reyes; Damonte, Laura C.; Brine, Hicham; Bolink, Henk J.; Hernández-Fenollosa, María A.

2013-03-01

Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion.

Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition.

PubMed

Tolosa, Maria D Reyes; Damonte, Laura C; Brine, Hicham; Bolink, Henk J; Hernández-Fenollosa, María A

2013-03-23

Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion.

Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition

PubMed Central

2013-01-01

Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic force microscopy, and optical transmission spectroscopy. We show that the properties of the ZnO nanostructured films depend strongly on the type of primary oxide-covered substrate used. Previous studies on different electrodeposition methods for nucleation and growth are considered in the final discussion. PMID:23522332

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

PubMed

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Single-layered graphene oxide nanosheet/polyaniline hybrids fabricated through direct molecular exfoliation.

PubMed

Chen, Guan-Liang; Shau, Shi-Min; Juang, Tzong-Yuan; Lee, Rong-Ho; Chen, Chih-Ping; Suen, Shing-Yi; Jeng, Ru-Jong

2011-12-06

In this study, we used direct molecular exfoliation for the rapid, facile, large-scale fabrication of single-layered graphene oxide nanosheets (GOSs). Using macromolecular polyaniline (PANI) as a layered space enlarger, we readily and rapidly synthesized individual GOSs at room temperature through the in situ polymerization of aniline on the 2D GOS platform. The chemically modified GOS platelets formed unique 2D-layered GOS/PANI hybrids, with the PANI nanorods embedded between the GO interlayers and extended over the GO surface. X-ray diffraction revealed that intergallery expansion occurred in the GO basal spacing after the PANI nanorods had anchored and grown onto the surface of the GO layer. Transparent folding GOSs were, therefore, observed in transmission electron microscopy images. GOS/PANI nanohybrids possessing high conductivities and large work functions have the potential for application as electrode materials in optoelectronic devices. Our dispersion/exfoliation methodology is a facile means of preparing individual GOS platelets with high throughput, potentially expanding the applicability of nanographene oxide materials. © 2011 American Chemical Society

Apparatus for sensing patterns of electrical field variations across a surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, William L.; Devine, Roderick A. B.

An array of nonvolatile field effect transistors used to sense electric potential variations. The transistors owe their nonvolatility to the movement of protons within the oxide layer that occurs only in response to an externally applied electric potential between the gate on one side of the oxide and the source/drain on the other side. The position of the protons within the oxide layer either creates or destroys a conducting channel in the adjacent source/channel/drain layer below it, the current in the channel being measured as the state of the nonvolatile memory. The protons can also be moved by potentials createdmore » by other instrumentalities, such as charges on fingerprints or styluses above the gates, pressure on a piezoelectric layer above the gates, light shining upon a photoconductive layer above the gates. The invention allows sensing of fingerprints, handwriting, and optical images, which are converted into digitized images thereof in a nonvolatile format.« less

Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

PubMed

Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

2015-10-19

Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

Detection and electrical characterization of hidden layers using time-domain analysis of terahertz reflections

NASA Astrophysics Data System (ADS)

Geltner, I.; Hashimshony, D.; Zigler, A.

2002-07-01

We use a time-domain analysis method to characterize the outer layer of a multilayer structure regardless of the inner ones, thus simplifying the characterization of all the layers. We combine this method with THz reflection spectroscopy to detect nondestructively a hidden aluminum oxide layer under opaque paint and to measure its conductivity and high-frequency dielectric constant in the THz range.

Composite wire microelectrode and method of making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Isaacs, H.S.; Aldykiewicz, A.J. Jr.

1996-12-03

A composite wire microelectrode for making electro-chemical measurements, and method of making same, are disclosed. The microelectrode includes an inner conductive sensing wire and an outer tube that is oxidized to form a dielectric, self-healing oxide layer around the sensing wire. 4 figs.

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

Effect upon biocompatibility and biocorrosion properties of plasma electrolytic oxidation in trisodium phosphate electrolytes.

PubMed

Kim, Yu-Kyoung; Park, Il-Song; Lee, Kwang-Bok; Bae, Tae-Sung; Jang, Yong-Seok; Oh, Young-Min; Lee, Min-Ho

2016-03-01

Surface modification to improve the corrosion resistance and biocompatibility of the Mg-Al-Zn-Ca alloy was conducted via plasma electrolytic oxidation (PEO) in an electrolyte that included phosphate. Calcium phosphate can be easily induced on the surface of a PEO coating that includes phosphate in a physiological environment because Ca(2+) ions in body fluids can be combined with PO4 (3-). Cytotoxicity of the PEO coating formed in electrolytes with various amounts of Na3PO4 was identified. In particular, the effects that PEO films have upon oxidative stress and differentiation of osteoblast activity were studied. As the concentration of Na3PO4 in the electrolyte increased, the oxide layer was found to become thicker, which increased corrosion resistance. However, the PEO coating formed in electrolytes with over 0.2 M of added Na3PO4 exhibited more microcracks and larger pores than those formed in smaller Na3PO4 concentrations owing to a large spark discharge. A nonuniform oxide film that included more phosphate caused more cytotoxicity and oxidative stress, and overabundant phosphate content in the oxide layer interrupted the differentiation of osteoblasts. The corrosion resistance of the magnesium alloy and the thickness of the oxide layer were increased by the addition of Na3PO4 in the electrolyte for PEO treatment. However, excessive phosphate content in the oxide layer led to oxidative stress, which resulted in reduced cell viability and activity.

Fuel cell anode configuration for CO tolerance

DOEpatents

Uribe, Francisco A.; Zawodzinski, Thomas A.

2004-11-16

A polymer electrolyte fuel cell (PEFC) is designed to operate on a reformate fuel stream containing oxygen and diluted hydrogen fuel with CO impurities. A polymer electrolyte membrane has an electrocatalytic surface formed from an electrocatalyst mixed with the polymer and bonded on an anode side of the membrane. An anode backing is formed of a porous electrically conductive material and has a first surface abutting the electrocatalytic surface and a second surface facing away from the membrane. The second surface has an oxidation catalyst layer effective to catalyze the oxidation of CO by oxygen present in the fuel stream where at least the layer of oxidation catalyst is formed of a non-precious metal oxidation catalyst selected from the group consisting of Cu, Fe, Co, Tb, W, Mo, Sn, and oxides thereof, and other metals having at least two low oxidation states.

Effect of oxide layer formation on deformation of aluminum alloys under fire conditions

DOE PAGES

Yilmaz, Nadir; Vigil, Francisco M.; Tolendino, Greg; ...

2015-05-14

The purpose of this study is to investigate the structural behavior of aluminum alloys used in the aerospace industry when exposed to conditions similar to those of an accident scenario, such as a fuel fire. This study focuses on the role that the aluminum oxide layer plays in the deformation and the strength of the alloy above melting temperature. To replicate some of the thermal and atmospheric conditions that the alloys might experience in an accident scenario, aluminum rod specimens were subjected to temperatures near to or above their melting temperature in air, nitrogen, and vacuum environments. The characteristics ofmore » their deformation, such as geometry and rate of deformation, were observed. Tests were conducted by suspending aluminum rods vertically from an enclosure. This type of experiment was performed in two different environments: air and nitrogen. The change in environments allowed the effects of the oxide layer on the material strength to be analyzed by inhibiting the growth of the oxide layer. Observations were reported from imaging taken during the experiment showing creep behavior of aluminum alloys at elevated temperatures and time to failure. In addition, an example of tensile load–displacement data obtained in air and vacuum was reported to understand the effect of oxide layer on aluminum deformation and strength.« less

Conformal bi-layered perovskite/spinel coating on a metallic wire network for solid oxide fuel cells via an electrodeposition-based route

NASA Astrophysics Data System (ADS)

Park, Beom-Kyeong; Song, Rak-Hyun; Lee, Seung-Bok; Lim, Tak-Hyoung; Park, Seok-Joo; Jung, WooChul; Lee, Jong-Won

2017-04-01

Solid oxide fuel cells (SOFCs) require low-cost metallic components for current collection from electrodes as well as electrical connection between unit cells; however, the degradation of their electrical properties and surface stability associated with high-temperature oxidation is of great concern. It is thus important to develop protective conducting oxide coatings capable of mitigating the degradation of metallic components under SOFC operating conditions. Here, we report a conformal bi-layered coating composed of perovskite and spinel oxides on a metallic wire network fabricated by a facile electrodeposition-based route. A highly dense, crack-free, and adhesive bi-layered LaMnO3/Co3O4 coating of ∼1.2 μm thickness is conformally formed on the surfaces of wires with ∼100 μm diameter. We demonstrate that the bi-layered LaMnO3/Co3O4 coating plays a key role in improving the power density and durability of a tubular SOFC by stabilizing the surface of the metallic wire network used as a cathode current collector. The electrodeposition-based technique presented in this study offers a low-cost and scalable process to fabricate conformal multi-layered coatings on various metallic structures.

Advanced Antireflection Coatings for High-Performance Solar Energy Applications

NASA Technical Reports Server (NTRS)

Pan, Noren

2015-01-01

Phase II objectives: Develop and refine antireflection coatings incorporating lanthanum titanate as an intermediate refractive index material; Investigate wet/dry thermal oxidation of aluminum containing semiconductor compounds as a means of forming a more transparent window layer with equal or better optical properties than its unoxidized form; Develop a fabrication process that allows integration of the oxidized window layer and maintains the necessary electrical properties for contacting the solar cell; Conduct an experimental demonstration of the best candidates for improved antireflection coatings.

Copper:molybdenum sub-oxide blend as transparent conductive electrode (TCE) indium free

NASA Astrophysics Data System (ADS)

Hssein, Mehdi; Cattin, Linda; Morsli, Mustapha; Addou, Mohammed; Bernède, Jean-Christian

2016-05-01

Oxide/metal/oxide structures have been shown to be promising alternatives to ITO. In such structures, in order to decrease the high light reflection of the metal film it is embedded between two metal oxides dielectric. MoO3-x is often used as oxide due to its capacity to be a performing anode buffer layer in organic solar cells, while silver is the metal the most often used [1]. Some attempts to use cheaper metal such as copper have been done. However it was shown that Cu diffuses strongly into MoO3-x [2]. Here we used this property to grow simple new transparent conductive oxide (TCE), i.e., Cu: MoO3-x blend. After the deposition of a thin Cu layer, a film of MoO3-x is deposited by sublimation. An XPS study shows more than 50% of Cu is present at the surface of the structure. In order to limit the Cu diffusion an ultra-thin Al layer is deposited onto MoO3-x. Then, in order to obtain a good hole collecting contact with the electron donor of the organic solar cells, a second MoO3-x layer is deposited. After optimization of the thickness of the different layers, the optimum structure is as follow: Cu (12 nm) : MoO3-x (20 nm)/Al (0.5 nm)/ MoO3-x (10 nm). The sheet resistance of this structure is Rsq = 5.2 Ω/sq. and its transmittance is Tmax = 65%. The factor of merit ϕM = T10/Rsq. = 2.41 × 10-3 Ω-1, which made this new TCE promising as anode in organic solar cells. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement

NASA Astrophysics Data System (ADS)

Ye, Fan; Xiaorong, Luo; Kun, Zhou; Yuanhang, Fan; Yongheng, Jiang; Qi, Wang; Pei, Wang; Yinchun, Luo; Bo, Zhang

2014-03-01

A low specific on-resistance (Ron,sp) SOI NBL TLDMOS (silicon-on-insulator trench LDMOS with an N buried layer) is proposed. It has three features: a thin N buried layer (NBL) on the interface of the SOI layer/buried oxide (BOX) layer, an oxide trench in the drift region, and a trench gate extended to the BOX layer. First, on the on-state, the electron accumulation layer forms beside the extended trench gate; the accumulation layer and the highly doping NBL constitute an L-shaped low-resistance conduction path, which sharply decreases the Ron,sp. Second, in the y-direction, the BOX's electric field (E-field) strength is increased to 154 V/μm from 48 V/μm of the SOI Trench Gate LDMOS (SOI TG LDMOS) owing to the high doping NBL. Third, the oxide trench increases the lateral E-field strength due to the lower permittivity of oxide than that of Si and strengthens the multiple-directional depletion effect. Fourth, the oxide trench folds the drift region along the y-direction and thus reduces the cell pitch. Therefore, the SOI NBL TLDMOS structure not only increases the breakdown voltage (BV), but also reduces the cell pitch and Ron,sp. Compared with the TG LDMOS, the NBL TLDMOS improves the BV by 105% at the same cell pitch of 6 μm, and decreases the Ron,sp by 80% at the same BV.

Real-time detection of mercury ions in water using a reduced graphene oxide/DNA field-effect transistor with assistance of a passivation layer

DOE PAGES

Chang, Jingbo; Zhou, Guihua; Gao, Xianfeng; ...

2015-08-01

Field-effect transistor (FET) sensors based on reduced graphene oxide (rGO) for detecting chemical species provide a number of distinct advantages, such as ultrasensitivity, label-free, and real-time response. However, without a passivation layer, channel materials directly exposed to an ionic solution could generate multiple signals from ionic conduction through the solution droplet, doping effect, and gating effect. Therefore, a method that provides a passivation layer on the surface of rGO without degrading device performance will significantly improve device sensitivity, in which the conductivity changes solely with the gating effect. In this work, we report rGO FET sensor devices with Hg 2+-dependentmore » DNA as a probe and the use of an Al 2O 3 layer to separate analytes from conducting channel materials. The device shows good electronic stability, excellent lower detection limit (1 nM), and high sensitivity for real-time detection of Hg 2+ in an underwater environment. Our work shows that optimization of an rGO FET structure can provide significant performance enhancement and profound fundamental understanding for the sensor mechanism.« less

Superconducting composite with multilayer patterns and multiple buffer layers

DOEpatents

Wu, Xin D.; Muenchausen, Ross E.

1993-01-01

An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco n FIELD OF THE INVENTION The present invention relates to the field of superconducting articles having two distinct regions of superconductive material with differing in-plane orientations whereby the conductivity across the boundary between the two regions can be tailored. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

Graphene oxide as a dual-function conductive binder for PEEK-derived microporous carbons in high performance supercapacitors

NASA Astrophysics Data System (ADS)

Kim, Christine H. J.; Zhang, Hongbo; Liu, Jie

2015-06-01

Microporous carbons (MPCs) are promising electrode materials for supercapacitors because of their high surface area and accessible pores. However, their low electrical conductivity and mechanical instability result in limited power density and poor cycle life. This work proposes a unique two-layered film made of polyetheretherketone-derived MPCs and reduced graphene oxide (rGO) as an electrode for supercapacitors. Electrochemical characterizations of films show that such a layered structure is more effective in increasing the accessibility of ions to the hydrophilic MPCs and establishing conductive paths through the rGO network than a simple mixed composite film. The two-layered structure increases the capacitance by ˜124% (237 F g-1) with excellent cycling stability (˜93% after 6000 cycles). More importantly, we demonstrate that such performance improvements result from an optimal balance between electrical conductivity and ion accessibility, which maximizes the synergistic effects of MPC and rGO. The MPCs, which are exposed to the surface, provide a highly accessible surface area for ion adsorption. The rGO serves a dual function as a conductive filler to increase the electrical conductivity and as a binder to interconnect individual MPC particles into a robust and flexible film. These findings provide a rational basis for the design of MPC-based electrodes in high performance supercapacitors.

Performance of a single layer fuel cell based on a mixed proton-electron conducting composite

NASA Astrophysics Data System (ADS)

Zagórski, Krzysztof; Wachowski, Sebastian; Szymczewska, Dagmara; Mielewczyk-Gryń, Aleksandra; Jasiński, Piotr; Gazda, Maria

2017-06-01

Many of the challenges in solid oxide fuel cell technology stem from chemical and mechanical incompatibilities between the anode, cathode and electrolyte materials. Numerous attempts have been made to identify compatible materials. Here, these challenges are circumvented by the introduction of a working single layer fuel cell, fabricated from a composite of proton conducting BaCe0.6Zr0.2Y0.2O3-δ and a mixture of semiconducting oxides - Li2O, NiO, and ZnO. Structural and electrical properties of the composite, related to its fuel cell performance are investigated. The single layer fuel cell shows a maximum OCV of 0.83 V and a peak power density of 3.86 mW cm-2 at 600 °C. Activation and mass transport losses are identified as the major limiting factor for efficiency and power output.

An XPS study of the adherence of refractory carbide, silicide, and boride RF-sputtered wear-resistant coatings. [X-ray Photoelectron Spectroscopy of steel surfaces

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

Radio frequency sputtering was used to deposit refractory carbide, silicide, and boride coatings on 440-C steel substrates. Both sputter etched and pre-oxidized substrates were used and the films were deposited with and without a substrate bias. The composition of the coatings was determined as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. Friction and wear tests were conducted to evaluate coating adherence. In the interfacial region there was evidence that bias may produce a graded interface for some compounds. Biasing, while generally improving bulk film stoichiometry, can adversely affect adherence by removing interfacial oxide layers. Oxides of all film constituents except carbon and iron were present in all cases but the iron oxide coverage was only complete on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 films. In the case of mixed oxides, preoxidation enhanced film adherence. In the layered case it did not.

Dynamic oxidation behavior of TD-NiCr alloy with different surface pretreatments

NASA Technical Reports Server (NTRS)

Young, C. T.; Tenney, D. R.; Herring, H. W.

1975-01-01

Oxidation tests of TD-NiCr alloy with different surface pretreatments were conducted in a Mach-5 arc-jet at 1200 C and 0.002 lb/sec flowing air environment. The mechanisms responsible for the observed oxidation behavior are examined. The presence of atomic oxygen in the air stream plays a significant role in determining the oxidation characteristic of the alloy. The rate of Cr2O3 vaporization by formation of volatile CrO3 is greatly enhanced by the flowing conditions. The typical microstructure of oxides formed in the dynamic tests consists of an external layer of NiO with a porous mushroom-type morphology, an intermediate layer of NiO and Cr2O3 oxide mixture, and a continuous inner layer of Cr2O3 in contact with the Cr-depleted alloy substrate. Three basic processes underlying the formation of mushroom-type NiO are identified and discussed. The oxidation rate is determined by the rate of vaporization of NiO. Surface pretreatment has a significant effect on the oxidation behavior of the alloy in the early stage of oxidation, but becomes less important as exposure time increases. Mechanical polishing induces surface recrystallization, but promotes the concurrence of external growth of NiO and internal oxidation of the alloy in the dynamic atmosphere.

Localized conductive patterning via focused electron beam reduction of graphene oxide

NASA Astrophysics Data System (ADS)

Kim, Songkil; Kulkarni, Dhaval D.; Henry, Mathias; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V.; Fedorov, Andrei G.

2015-03-01

We report on a method for "direct-write" conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

NASA Astrophysics Data System (ADS)

Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

2017-09-01

Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

Tuning the Phase and Microstructural Properties of TiO2 Films Through Pulsed Laser Deposition and Exploring Their Role as Buffer Layers for Conductive Films

NASA Astrophysics Data System (ADS)

Agarwal, S.; Haseman, M. S.; Leedy, K. D.; Winarski, D. J.; Saadatkia, P.; Doyle, E.; Zhang, L.; Dang, T.; Vasilyev, V. S.; Selim, F. A.

2018-04-01

Titanium oxide (TiO2) is a semiconducting oxide of increasing interest due to its chemical and thermal stability and broad applicability. In this study, thin films of TiO2 were deposited by pulsed laser deposition on sapphire and silicon substrates under various growth conditions, and characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), optical absorption spectroscopy and Hall-effect measurements. XRD patterns revealed that a sapphire substrate is more suitable for the formation of the rutile phase in TiO2, while a silicon substrate yields a pure anatase phase, even at high-temperature growth. AFM images showed that the rutile TiO2 films grown at 805°C on a sapphire substrate have a smoother surface than anatase films grown at 620°C. Optical absorption spectra confirmed the band gap energy of 3.08 eV for the rutile phase and 3.29 eV for the anatase phase. All the deposited films exhibited the usual high resistivity of TiO2; however, when employed as a buffer layer, anatase TiO2 deposited on sapphire significantly improves the conductivity of indium gallium zinc oxide thin films. The study illustrates how to control the formation of TiO2 phases and reveals another interesting application for TiO2 as a buffer layer for transparent conducting oxides.

Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

NASA Astrophysics Data System (ADS)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

Bio-mimicked atomic-layer-deposited iron oxide-based memristor with synaptic potentiation and depression functions

NASA Astrophysics Data System (ADS)

Wan, Xiang; Gao, Fei; Lian, Xiaojuan; Ji, Xincun; Hu, Ertao; He, Lin; Tong, Yi; Guo, Yufeng

2018-06-01

In this study, an iron oxide (FeO x )-based memristor was investigated for the realization of artificial synapses. An FeO x resistive switching layer was prepared by self-limiting atomic layer deposition (ALD). The movement of oxygen vacancies enabled the device to have history-dependent synaptic functions, which was further demonstrated by device modeling and simulation. Analog synaptic potentiation/depression in conductance was emulated by applying consecutive voltage pulses in the simulation. Our results suggest that the ALD FeO x -based memristor can be used as the basic building block for neural networks, neuromorphic systems, and brain-inspired computers.

Synthesis of transparent conducting oxide coatings

DOEpatents

Elam, Jeffrey W.; Martinson, Alex B. F.; Pellin, Michael J.; Hupp, Joseph T.

2010-05-04

A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.

Investigation of Zircaloy-2 oxidation model for SFP accident analysis

NASA Astrophysics Data System (ADS)

Nemoto, Yoshiyuki; Kaji, Yoshiyuki; Ogawa, Chihiro; Kondo, Keietsu; Nakashima, Kazuo; Kanazawa, Toru; Tojo, Masayuki

2017-05-01

The authors previously conducted thermogravimetric analyses on Zircaloy-2 in air. By using the thermogravimetric data, an oxidation model was constructed in this study so that it can be applied for the modeling of cladding degradation in spent fuel pool (SFP) severe accident condition. For its validation, oxidation tests of long cladding tube were conducted, and computational fluid dynamics analyses using the constructed oxidation model were proceeded to simulate the experiments. In the oxidation tests, high temperature thermal gradient along the cladding axis was applied and air flow rates in testing chamber were controlled to simulate hypothetical SFP accidents. The analytical outputs successfully reproduced the growth of oxide film and porous oxide layer on the claddings in oxidation tests, and validity of the oxidation model was proved. Influence of air flow rate for the oxidation behavior was thought negligible in the conditions investigated in this study.

Metallic nanomesh

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Zhifeng; Sun, Tianyi; Guo, Chuanfei

2018-02-20

A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300.OMEGA./.quadrature. when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.

Ablation of selected conducting layers by fiber laser

NASA Astrophysics Data System (ADS)

Pawlak, Ryszard; Tomczyk, Mariusz; Walczak, Maria

2014-08-01

Laser Direct Writing (LDW) are used in the manufacture of electronic circuits, pads, and paths in sub millimeter scale. They can also be used in the sensors systems. Ablative laser writing in a thin functional layer of material deposited on the dielectric substrate is one of the LDW methods. Nowadays functional conductive layers are composed from graphene paint or nanosilver paint, indium tin oxide (ITO), AgHTTM and layers containing carbon nanotubes. Creating conducting structures in transparent layers (ITO, AgHT and carbon nanotubes layers) may have special importance e.g. for flexi electronics. The paper presents research on the fabrication of systems of paths and appropriate pattern systems of paths and selected electronic circuits in AgHTTM and ITO layers deposited on glass and polymer substrates. An influence of parameters of ablative fiber laser treatment in nanosecond regime as well as an influence of scanning mode of laser beam on the pattern fidelity and on electrical parameters of a generated circuit was investigated.

Thermal conductivity of SrVO3-SrTiO3 thin films: Evidence of intrinsic thermal resistance at the interface between oxide layers

NASA Astrophysics Data System (ADS)

Katsufuji, T.; Saiki, T.; Okubo, S.; Katayama, Y.; Ueno, K.

2018-05-01

By using a technique of thermoreflectance that can precisely measure the thermal conductivity of thin films, we found that the thermal conductivity of SrVO3-SrTiO3 multilayer thin films normal to the surface was substantially reduced by decreasing the thickness of each layer. This indicates that a large intrinsic thermal resistance exists at the interface between SrVO3 and SrTiO3 in spite of the similar phononic properties for these two compounds.

All-solution processed transparent organic light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Min; Höfle, Stefan; Czolk, Jens; Mertens, Adrian; Colsmann, Alexander

2015-11-01

In this work, we report on indium tin oxide-free, all-solution processed transparent organic light emitting diodes (OLEDs) with inverted device architecture. Conductive polymer layers are employed as both transparent cathodes and transparent anodes, with the top anodes having enhanced conductivities from a supporting stochastic silver nanowire mesh. Both electrodes exhibit transmittances of 80-90% in the visible spectral regime. Upon the incorporation of either yellow- or blue-light emitting fluorescent polymers, the OLEDs show low onset voltages, demonstrating excellent charge carrier injection from the polymer electrodes into the emission layers. Overall luminances and current efficiencies equal the performance of opaque reference OLEDs with indium tin oxide and aluminium electrodes, proving excellent charge carrier-to-light conversion within the device.

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications.

PubMed

Kou, Kuang-Yang; Huang, Yu-En; Chen, Chien-Hsun; Feng, Shih-Wei

2016-01-01

The interplay of surface texture, strain relaxation, absorbance, grain size, and sheet resistance in textured, boron-doped ZnO (ZnO@B), transparent conductive oxide (TCO) materials of different thicknesses used for thin film, solar cell applications is investigated. The residual strain induced by the lattice mismatch and the difference in the thermal expansion coefficient for thicker ZnO@B is relaxed, leading to an increased surface texture, stronger absorbance, larger grain size, and lower sheet resistance. These experimental results reveal the optical and material characteristics of the TCO layer, which could be useful for enhancing the performance of solar cells through an optimized TCO layer.

Misfit layered Ca{sub 3}Co{sub 4}O{sub 9} as a high figure of merit p-type transparent conducting oxide film through solution processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aksit, M.; Kolli, S. K.; Slauch, I. M.

Ca{sub 3}Co{sub 4}O{sub 9} thin films synthesized through solution processing are shown to be high-performing, p-type transparent conducting oxides (TCOs). The synthesis method is a cost-effective and scalable process that consists of sol-gel chemistry, spin coating, and heat treatments. The process parameters can be varied to produce TCO thin films with sheet resistance as low as 5.7 kΩ/sq (ρ ≈ 57 mΩ cm) or with average visible range transparency as high as 67%. The most conductive Ca{sub 3}Co{sub 4}O{sub 9} TCO thin film has near infrared region optical transmission as high as 85%. The figure of merit (FOM) for the top-performing Ca{sub 3}Co{submore » 4}O{sub 9} thin film (151 MΩ{sup −1}) is higher than FOM values reported in the literature for all other solution processed, p-type TCO thin films and higher than most others prepared by physical vapor deposition and chemical vapor deposition. Transparent conductivity in misfit layered oxides presents new opportunities for TCO compositions.« less

La0.7Sr0.3MnO3: A single, conductive-oxide buffer layer for the development of YBa2Cu3O7-δ coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Kang, B. W.; Sathyamurthy, S.; Goyal, A.; Christen, D. K.

2001-10-01

Coated conductor applications in power technologies require stabilization of the high-temperature superconducting (HTS) layers against thermal runaway. Conductive La0.7Sr0.3MnO3 (LSMO) has been epitaxially grown on biaxially textured Ni substrates as a single buffer layer. The subsequent epitaxial growth of YBa2Cu3O7-δ (YBCO) coatings by pulsed laser deposition yielded self-field critical current densities (Jc) of 0.5×106A/cm2 at 77 K, and provided good electrical connectivity over the entire structure (HTS+conductive-buffer+metal substrate). Property characterizations of YBCO/LSMO/Ni architecture revealed excellent crystallographic and morphological properties. These results have demonstrated that LSMO, used as a single, conductive buffer layer, may offer potential for use in fully stabilized YBCO coated conductors.

Thermal Conductivity Changes Due to Degradation of Cathode Film Subjected to Charge-Discharge Cycles in a Li Ion Battery

NASA Astrophysics Data System (ADS)

Jagannadham, K.

2018-05-01

A battery device with graphene platelets as anode, lithium nickel manganese oxide as cathode, and solid-state electrolyte consisting of layers of lithium phosphorous oxynitride and lithium lanthanum titanate is assembled on the stainless steel substrate. The battery in a polymer enclosure is subjected to several electrical tests consisting of charge and discharge cycles at different current and voltage levels. Thermal conductivity of the cathode layer is determined at the end of charge-discharge cycles using transient thermoreflectance. The microstructure and composition of the cathode layer and the interface between the cathode, the anode, and the electrolyte are characterized using scanning electron microscopy and elemental mapping. The decrease in the thermal conductivity of the same cathode observed after each set of electrical test cycles is correlated with the volume changes and formation of low ionic and thermal conductivity lithium oxide and lithium oxychloride at the interface and along porous regions. The interface between the metal current collector and the cathode is also found to be responsible for the increase in thermal resistance. The results indicate that changes in the thermal conductivity of the electrodes provide a measure of the resistance to heat transfer and degradation of ionic transport in the cathode accompanying the charge-discharge cycles in the batteries.

Efficient and ultraviolet durable planar perovskite solar cells via a ferrocenecarboxylic acid modified nickel oxide hole transport layer.

PubMed

Zhang, Jiankai; Luo, Hui; Xie, Weijia; Lin, Xuanhuai; Hou, Xian; Zhou, Jianping; Huang, Sumei; Ou-Yang, Wei; Sun, Zhuo; Chen, Xiaohong

2018-03-28

Planar perovskite solar cells (PSCs) that use nickel oxide (NiO x ) as a hole transport layer have recently attracted tremendous attention because of their excellent photovoltaic efficiencies and simple fabrication. However, the electrical conductivity of NiO x and the interface contact properties of the NiO x /perovskite layer are always limited for the NiO x layer fabricated at a relatively low annealing temperature. Ferrocenedicarboxylic acid (FDA) was firstly introduced to modify a p-type NiO x hole transport layer in PSCs, which obviously improves the crystallization of the perovskite layer and hole transport and collection abilities and reduces carrier recombination. PSCs with a FDA modified NiO x layer reached a PCE of 18.20%, which is much higher than the PCE (15.13%) of reference PSCs. Furthermore, PSCs with a FDA interfacial modification layer show better UV durability and a hysteresis-free effect and still maintain the original PCE value of 49.8%after being exposed to UV for 24 h. The enhanced performance of the PSCs is attributed to better crystallization of the perovskite layer, the passivation effect of FDA, superior interface contact at the NiO x /perovskite layers and enhancement of the electrical conductivity of the FDA modified NiO x layer. In addition, PSCs with FDA inserted at the interface of the perovskite/PCBM layers can also improve the PCE to 16.62%, indicating that FDA have dual functions to modify p-type and n-type carrier transporting layers.

Low temperature solid oxide electrolytes (LT-SOE): A review

NASA Astrophysics Data System (ADS)

Singh, B.; Ghosh, S.; Aich, S.; Roy, B.

2017-01-01

Low temperature solid oxide fuel cell (LT-SOFC) can be a source of power for vehicles, online grid, and at the same time reduce system cost, offer high reliability, and fast start-up. A huge amount of research work, as evident from the literature has been conducted for the enhancement of the ionic conductivity of LT electrolytes in the last few years. The basic conduction mechanisms, advantages and disadvantages of different LT oxide ion conducting electrolytes {BIMEVOX systems, bilayer systems including doped cerium oxide/stabilised bismuth oxide and YSZ/DCO}, mixed ion conducting electrolytes {doped cerium oxides/alkali metal carbonate composites}, and proton conducting electrolytes {doped and undoped BaCeO3, BaZrO3, etc.} are discussed here based on the recent research articles. Effect of various material aspects (composition, doping, layer thickness, etc.), fabrication methods (to achieve different microstructures and particle size), design related strategies (interlayer, sintering aid etc.), characterization temperature & environment on the conductivity of the electrolytes and performance of the fuel cells made from these electrolytes are shown in tabular form and discussed. The conductivity of the electrolytes and performance of the corresponding fuel cells are compared. Other applications of the electrolytes are mentioned. A few considerations regarding the future prospects are pointed.

High Performance Proton-Conducting Solid Oxide Fuel Cells with a Layered Perovskite GdBaCuCoO5+ x Cathode

NASA Astrophysics Data System (ADS)

Zhang, Xiaozhen; Jiang, Yuhua; Hu, Xuebing; Sun, Liangliang; Ling, Yihan

2018-03-01

Proton-conducting solid oxide fuel cell (H-SOFC) based on layered perovskite type GdBaCuCoO5+x (GBCC) cathode was fabricated with in situ drop-coating BaZr0.1Ce0.7Y0.2O3-δ (BZCY) electrolyte membrane. The influences of Cu doping into Co sites of GdBaCo2O5+ x on the electrical conductivity and conduction mechanism, thermal expansion property and electrochemical performance of cathode materials and corresponding single cell were investigated. Results show that the electrical conductivity decreased and the conduction mechanism would gradually transform to the semiconductor-like behavior. A high maximum power density of 480 mW cm-2 was obtained for the anode supported NiO-BZCY/NiO-BZCY/BZCY/GBCC single cells with wet H2 fuel at 700 °C. The corresponding polarization resistance was as low as 0.17 Ω cm2. The excellent electrochemical performance of as-prepared single cell indicates that GBCC is a good candidate of cathode materials for H-SOFCs.

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

NASA Astrophysics Data System (ADS)

Lin, Jia-Yong; Pei, Yan-Li; Zhuo, Yi; Chen, Zi-Min; Hu, Rui-Qin; Cai, Guang-Shuo; Wang, Gang

2016-11-01

In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400 °C without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V @ 20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-III), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-II), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

Metallization of electronic insulators

DOEpatents

Gottesfeld, Shimshon; Uribe, Francisco A.

1994-01-01

An electroplated element is formed to include an insulating substrate, a conducting polymer polymerized in situ on the substrate, and a metal layer deposited on the conducting polymer. In one application a circuit board is formed by polymerizing pyrrole on an epoxy-fiberglass substrate in a single step process and then electrodepositing a metal over the resulting polypyrrole polymer. No chemical deposition of the metal is required prior to electroplating and the resulting layer of substrate-polymer-metal has excellent adhesion characteristics. The metal deposition is surprisingly smooth and uniform over the relatively high resistance film of polypyrrole. A continuous manufacturing process is obtained by filtering the solution between successive substrates to remove polymer formed in the solution, by maintaining the solution oxidizing potential within selected limits, and by adding a strong oxidant, such as KMnO.sub.4 at periodic intervals to maintain a low sheet resistivity in the resulting conducting polymer film.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Conduction at a ferroelectric interface

DOE PAGES

Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; ...

2014-11-05

Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, inmore » one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.« less

Oxidation resistance, thermal conductivity, and spectral emittance of fully dense zirconium diboride with silicon carbide and tantalum diboride additives

NASA Astrophysics Data System (ADS)

Van Laningham, Gregg Thomas

Zirconium diboride (ZrB2) is a ceramic material possessing ultra-high melting temperatures. As such, this compound could be useful in the construction of thermal protection systems for aerospace applications. This work addresses a primary shortcoming of this material, namely its propensity to destructively oxidize at high temperatures, as well as secondary issues concerning its heat transport properties. To characterize and improve oxidation properties, thermogravimetric studies were performed using a specially constructed experimental setup. ZrB 2-SiC two-phase ceramic composites were isothermally oxidized for ~90 min in flowing air in the range 1500-1900°C. Specimens with 30 mol% SiC formed distinctive reaction product layers which were highly protective; 28 mol% SiC - 6 mol% TaB2 performed similarly. At higher temperatures, specimens containing lower amounts of SiC were shown to be non-protective, whereas specimens containing greater amounts of SiC produced unstable oxide layers due to gas evolution. Oxide coating thicknesses calculated from weight loss data were consistent with those measured from SEM micrographs. In order to characterize one aspect of the materials' heat transport properties, the thermal diffusivities of ZrB2-SiC composites were measured using the laser flash technique. These were converted to thermal conductivities using temperature dependent specific heat and density data; thermal conductivity decreased with increasing temperature over the range 25-2000°C. The composition with the highest SiC content showed the highest thermal conductivity at room temperature, but the lowest at temperatures in excess of ~400°C, because of the greater temperature sensitivity of the thermal conductivity of the SiC phase, as compared to more electrically-conductive ZrB2. Subsequent finite difference calculations were good predictors of multi-phase thermal conductvities for the compositions examined. The thermal conductivities of pure ZrB2 as a function of temperature were back-calculated from the experimental results for the multi-phase materials, and literature thermal conductivities of the other two phases. This established a relatively constant thermal conductivity of 88-104 W·K over the evaluated temperature range. Further heat transport characterization was performed using pre-oxidized, directly resistively heated ZrB2-30 mol% SiC ribbon specimens under the observation of a spectral radiometer. The ribbons were heated and held at specific temperatures over the range 1100-1330°C in flowing Ar, and normal spectral emittance values were recorded over the 1-6 μm range with a resolution of 10 nm. The normal spectral emittance was shown to decrease with loss of the borosilicate layer over the course of the data collection time periods. This change was measured and compensated for to produce traces showing the emittance of the oxidized composition rising from ~0.7 to ~0.9 over the range of wavelengths measured (1-6 μm).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki

By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection bymore » accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.« less

Highly efficient monolithic dye-sensitized solar cells.

PubMed

Kwon, Jeong; Park, Nam-Gyu; Lee, Jun Young; Ko, Min Jae; Park, Jong Hyeok

2013-03-01

Monolithic dye-sensitized solar cells (M-DSSCs) provide an effective way to reduce the fabrication cost of general DSSCs since they do not require transparent conducting oxide substrates for the counter electrode. However, conventional monolithic devices have low efficiency because of the impediments resulting from counter electrode materials and spacer layers. Here, we demonstrate highly efficient M-DSSCs featuring a highly conductive polymer combined with macroporous polymer spacer layers. With M-DSSCs based on a PEDOT/polymer spacer layer, a power conversion efficiency of 7.73% was achieved, which is, to the best of our knowledge, the highest efficiency for M-DSSCs to date. Further, PEDOT/polymer spacer layers were applied to flexible DSSCs and their cell performance was investigated.

Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies

NASA Astrophysics Data System (ADS)

Filatova, E. O.; Baraban, A. P.; Konashuk, A. S.; Konyushenko, M. A.; Selivanov, A. A.; Sokolov, A. A.; Schaefers, F.; Drozd, V. E.

2014-11-01

The effect of a transparent conductive oxide (TCO) buffer layer on the insulator matrix and on the resistive switching process in the metal/TiO2/TCO/metal assembly was studied depending on the material of the TCO (ITO-(In2O3)0.9(SnO2)0.1 or SnO2 or ZnO). For the first time electro-physical studies and near edge x-ray absorption fine structure (NEXAFS) studies were carried out jointly and at the same point of the sample, providing direct experimental evidence that the switching process strongly influences the lowest unoccupied bands and the local atomic structure of the TiO2 layers. It was established that a TCO layer in a metal/TiO2/TCO/metal assembly is an additional source of oxygen vacancies for the TiO2 film. The RL (RH) states are achieved presumably with the formation (rupture) of the electrically conductive path of oxygen vacancies. Inserting an Al2O3 thin layer between the TiO2 and TCO layers to some extent restricts the processes of migration of the oxygen ions and vacancies, and does not allow the anti-clockwise bipolar resistive switching in a Au/TiO2/Al2O3/ITO/Au assembly. The greatest value of the ratio RH/RL is observed for the assembly with a SnO2 buffer layer that will provide the maximum set of intermediate states (recording analog data) and increase the density of information recording in this case.

Modeling of oxidation of aluminum nanoparticles by using Cabrera Mott Model

NASA Astrophysics Data System (ADS)

Ramazanova, Zamart; Zyskin, Maxim; Martirosyan, Karen

2012-10-01

Our research focuses on modeling new Nanoenergetic Gas-Generator (NGG) formulations that rapidly release a large amount of gaseous products and generates shock and pressure waves. Nanoenergetic thermite reagents include mixtures of Al and metal oxides such as bismuth trioxide and iodine pentoxide. The research problem is considered a spherically symmetric case and used the Cabrera Mott oxidation model to describe the kinetics of oxide growth on spherical Al nanoparticles for evaluating reaction time which a process of the reaction with oxidizer happens on the outer part of oxide layer of aluminum ions are getting in contact with an oxidizing agent and react. We assumed that a ball of Al of radius 20 to 50 nm is covered by a thin oxide layer 2-4 nm and is surrounded by abundant amount of oxygen stored by oxidizers. The ball is rapidly heated up to ignition temperature to initiate self-sustaining oxidation reaction. As a result highly exothermic reaction is generated. In the oxide layer of excess concentrations of electrons and ions are dependent on the electric field potential with the corresponding of the Gibbs factors and that it conducts to the solution of a nonlinear Poisson equation for the electric field potential in a moving boundary domain. Motion of the boundary is determined by the gradient of a solution on the boundary. We investigated oxidation model numerically, using the COMSOL software utilizing finite element analysis. The computing results demonstrate that oxidation rate increases with the decreasing particle radius.

Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

PubMed

Kim, Gun Hwan; Lee, Jong Ho; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong

2012-10-24

The electrical performances of Pt/TiO(2)/Ti/Pt stacked Schottky-type diode (SD) was systematically examined, and this performance is dependent on the chemical structures of the each layer and their interfaces. The Ti layers containing a tolerable amount of oxygen showed metallic electrical conduction characteristics, which was confirmed by sheet resistance measurement with elevating the temperature, transmission line measurement (TLM), and Auger electron spectroscopy (AES) analysis. However, the chemical structure of SD stack and resulting electrical properties were crucially affected by the dissolved oxygen concentration in the Ti layers. The lower oxidation potential of the Ti layer with initially higher oxygen concentration suppressed the oxygen deficiency of the overlying TiO(2) layer induced by consumption of the oxygen from TiO(2) layer. This structure results in the lower reverse current of SDs without significant degradation of forward-state current. Conductive atomic force microscopy (CAFM) analysis showed the current conduction through the local conduction paths in the presented SDs, which guarantees a sufficient forward-current density as a selection device for highly integrated crossbar array resistive memory.

Architecture for high critical current superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.

2002-01-01

Improvements in critical current capacity for superconducting film structures are disclosed and include the use of, e.g., multilayer YBCO structures where individual YBCO layers are separated by a layer of an insulating material such as CeO.sub.2 and the like, a layer of a conducting material such as strontium ruthenium oxide and the like or by a second superconducting material such as SmBCO and the like.

High-Temperature Carbon Deposition on Oxide Surfaces by CO Disproportionation

PubMed Central

2016-01-01

Carbon deposition due to the inverse Boudouard reaction (2CO → CO2 + C) has been studied on yttria-stabilized zirconia (YSZ), Y2O3, and ZrO2 in comparison to CH4 by a variety of different chemical, structural, and spectroscopic characterization techniques, including electrochemical impedance spectroscopy (EIS), Fourier-transform infrared (FT-IR) spectroscopy and imaging, Raman spectroscopy, and electron microscopy. Consentaneously, all experimental methods prove the formation of a more or less conducting carbon layer (depending on the used oxide) of disordered nanocrystalline graphite covering the individual grains of the respective pure oxides after treatment in flowing CO at temperatures above ∼1023 K. All measurements show that during carbon deposition, a more or less substantial surface reduction of the oxides takes place. These results, therefore, reveal that the studied pure oxides can act as efficient nonmetallic substrates for CO-induced growth of highly distorted graphitic carbon with possible important technological implications especially with respect to treatment in pure CO or CO-rich syngas mixtures. Compared to CH4, more carbon is generally deposited in CO under otherwise similar experimental conditions. Although Raman and electron microscopy measurements do not show substantial differences in the structure of the deposited carbon layers, in particular, electrochemical impedance measurements reveal major differences in the dynamic growth process of the carbon layer, eventually leading to less percolated islands and suppressed metallic conductivity in comparison to CH4-induced graphite. PMID:26877828

Development of Plasma-Sprayed Molybdenum Carbide-Based Anode Layers with Various Metal Oxides for SOFC

NASA Astrophysics Data System (ADS)

Faisal, N. H.; Ahmed, R.; Katikaneni, S. P.; Souentie, S.; Goosen, M. F. A.

2015-12-01

Air plasma-sprayed (APS) coatings provide an ability to deposit a range of novel fuel cell materials at competitive costs. This work develops three separate types of composite anodes (Mo-Mo2C/Al2O3, Mo-Mo2C/ZrO2, Mo-Mo2C/TiO2) using a combination of APS process parameters on Hastelloy®X for application in intermediate temperature proton-conducting solid oxide fuel cells. Commercially available carbide of molybdenum powder catalyst (Mo-Mo2C) and three metal oxides (Al2O3, ZrO2, TiO2) was used to prepare three separate composite feedstock powders to fabricate three different anodes. Each of the modified composition anode feedstock powders included a stoichiometric weight ratio of 0.8:0.2. The coatings were characterized by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, nanoindentation, and conductivity. We report herein that three optimized anode layers of thicknesses between 200 and 300 µm and porosity as high as 20% for Mo-Mo2C/Al2O3 (250-µm thick) and Mo-Mo2C/TiO2 (300 µm thick) and 17% for Mo-Mo2C/ZrO2 (220-µm thick), controllable by a selection of the APS process parameters with no addition of sacrificial pore-forming material. The nanohardness results indicate the upper layers of the coatings have higher values than the subsurface layers in coatings with some effect of the deposition on the substrate. Mo-Mo2C/ZrO2 shows high electrical conductivity.

Resistive and Capacitive Memory Effects in Oxide Insulator/ Oxide Conductor Hetero-Structures

NASA Astrophysics Data System (ADS)

Meyer, Rene; Miao, Maosheng; Wu, Jian; Chevallier, Christophe

2013-03-01

We report resistive and capacitive memory effects observed in oxide insulator/ oxide conductor hetero-structures. Electronic transport properties of Pt/ZrO2/PCMO/Pt structures with ZrO2 thicknesses ranging from 20A to 40A are studied before and after applying short voltage pulses of positive and negative polarity for set and reset operation. As processed devices display a non-linear IV characteristic which we attribute to trap assisted tunneling through the ZrO2 tunnel oxide. Current scaling with electrode area and tunnel oxide thickness confirms uniform conduction. The set/reset operation cause an up/down shift of the IV characteristic indicating that the conduction mechanism of both states is still dominated by tunneling. A change in the resistance is associated with a capacitance change of the device. An exponential relation between program voltages and set times is found. A model based on electric field mediated non-linear transport of oxygen ions across the ZrO2/PCMO interface is proposed. The change in the tunnel current is explained by ionic charge transfer between tunnel oxide and conductive metal oxide changing both tunnel barrier height and PCMO conductivity. DFT techniques are employed to explain the conductivity change in the PCMO interfacial layer observed through capacitance measurements.

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

NASA Astrophysics Data System (ADS)

Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-06-01

The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

High-Temperature Oxidation of Fe3Al Intermetallic Alloy Prepared by Additive Manufacturing LENS

PubMed Central

Łyszkowski, Radosław

2015-01-01

The isothermal oxidation of Fe-28Al-5Cr (at%) intermetallic alloy microalloyed with Zr and B (<0.08 at%) in air atmosphere, in the temperature range of 1000 to 1200 °C, was studied. The investigation was carried out on the thin-walled (<1 mm) elements prepared by Laser Engineered Net Shaping (LENS) from alloy powder of a given composition. Characterization of the specimens, after the oxidation, was conducted using X-ray diffraction (XRD) and scanning electron microscopy (SEM, with back-scatter detector (BSE) and energy-dispersive X-ray spectroscopy (EDS) attachments). The investigation has shown, that the oxidized samples were covered with a thin, homogeneous α-Al2O3 oxide layers. The intensity of their growth indicates that the material lost its resistance to oxidation at 1200 °C. Structural analysis of the thin-walled components’ has not shown intensification of the oxidation process at the joints of additive layers. PMID:28788014

Align and random electrospun mat of PEDOT:PSS and PEDOT:PSS/RGO

NASA Astrophysics Data System (ADS)

Sarabi, Ghazale Asghari; Latifi, Masoud; Bagherzadeh, Roohollah

2018-01-01

In this research work we fabricated two ultrafine conductive nanofibrous layers to investigate the materilas composition and their properties for the preparation of supercapacitor materials application. In first layer, a polymer and a conductive polymer were used and second layer was a composition of polymer, conductive polymer and carbon-base material. In both cases align and randomized mat of conductive nanofibers were fabricated using electrospinning set up. Conductive poly (3,4-ethylenedioxythiophene)/ polystyrene sulfonate (PEDOT:PSS) nanofibers were electrospun by dissolving fiber-forming polymer and polyvinyl alcohol (PVA) in an aqueous dispersion of PEDOT:PSS. The effect of addition of reduced graphene oxide (RGO) was considered for nanocomposite layer. The ultrafine conductive polymer fibers and conductive nanocomposite fibrous materials were also fabricated using an electrospinning process. A fixed collector and a rotating drum were used for random and align nanofibers production, respectively. The resulted fibers were characterized and analyzed by SEM, FTIR and two-point probe conductivity test. The average diameter of nanofibers measured by ImageJ software indicated that the average fiber diameter for first layer was 100 nm and for nanocomposite layer was about 85 nm. The presence of PEDOT:PSS and RGO in the nanofibers was confirmed by FT-IR spectroscopy. The conductivity of align and random layers was characterized. The conductivity of PEDOT:PSS nanofibers showed higher enhancement by addition of RGO in aqueous dispersion. The obtained results showed that alignment of fibrous materials can be considered as an engineering tool for tuning the conductivity of fibrous materials for many different applications such as supercapacitors, conductive and transparent materials.

Oxidation behavior and electrical property of ferritic stainless steel interconnects with a Cr-La alloying layer by high-energy micro-arc alloying process

NASA Astrophysics Data System (ADS)

Feng, Z. J.; Zeng, C. L.

Chromium volatility, poisoning of the cathode material and rapidly decreasing electrical conductivity are the major problems associated with the application of ferritic stainless steel interconnects of solid oxide fuel cells operated at intermediate temperatures. Recently, a novel and simple high-energy micro-arc alloying (HEMAA) process is proposed to prepare LaCrO 3-based coatings for the type 430 stainless steel interconnects using a LaCrO 3-Ni rod as deposition electrode. In this work, a Cr-La alloying layer is firstly obtained on the alloy surface by HEMAA using Cr and La as deposition electrode, respectively, followed by oxidation treatment at 850 °C in air to form a thermally grown LaCrO 3 coating. With the formation of a protective scale composed of a thick LaCrO 3 outer layer incorporated with small amounts of Cr-rich oxides and a thin Cr 2O 3-rich sub-layer, the oxidation rate of the coated steel is reduced remarkably. A low and stable electrical contact resistance is achieved with the application of LaCrO 3-based coatings, with a value less than 40 mΩ cm 2 during exposure at 850 °C in air for up to 500 h.

High rate buffer layer for IBAD MgO coated conductors

DOEpatents

Foltyn, Stephen R [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM

2007-08-21

Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

Control of the orbital ordering in manganite superlattices and impact on properties

NASA Astrophysics Data System (ADS)

Koçak, Ayşegül Begüm; Varignon, Julien; Lemal, Sébastien; Ghosez, Philippe; Lepetit, Marie-Bernadette

2017-09-01

The present paper theoretically studies the possibility to control the orbital ordering in manganite superlattices. Indeed, favored dz2eg -orbital occupancy is one of the proposed interpretations for the formation of a "dead" layer at the interfaces in manganite thin films and superlattices. We show here that favored dz2eg -orbital occupancy at the interfaces can be prevented by using alkaline-earth simple oxides as alternating layers in very thin superlattices. Such an alternating layer promotes the contraction of the manganite layers at the interfaces and favors a dx2-y2eg orbital occupancy. This result holds for different manganites, different alkaline-earth simple oxides, as well as different thicknesses of the two layers. While Boltzmann's transport calculations on different superlattices show unexpectedly only weak dependence of the electrical conductivity on the orbital ordering, the enhanced occupation of the dx2-y2 orbital should result in an increased Curie temperature.

Stabilizing nanostructured solid oxide fuel cell cathode with atomic layer deposition.

PubMed

Gong, Yunhui; Palacio, Diego; Song, Xueyan; Patel, Rajankumar L; Liang, Xinhua; Zhao, Xuan; Goodenough, John B; Huang, Kevin

2013-09-11

We demonstrate that the highly active but unstable nanostructured intermediate-temperature solid oxide fuel cell cathode, La0.6Sr0.4CoO3-δ (LSCo), can retain its high oxygen reduction reaction (ORR) activity with exceptional stability for 4000 h at 700 °C by overcoating its surfaces with a conformal layer of nanoscale ZrO2 films through atomic layer deposition (ALD). The benefits from the presence of the nanoscale ALD-ZrO2 overcoats are remarkable: a factor of 19 and 18 reduction in polarization area-specific resistance and degradation rate over the pristine sample, respectively. The unique multifunctionality of the ALD-derived nanoscaled ZrO2 overcoats, that is, possessing porosity for O2 access to LSCo, conducting both electrons and oxide-ions, confining thermal growth of LSCo nanoparticles, and suppressing surface Sr-segregation is deemed the key enabler for the observed stable and active nanostructured cathode.

Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor.

PubMed

Park, Hyun-Woo; Song, Aeran; Choi, Dukhyun; Kim, Hyung-Jun; Kwon, Jang-Yeon; Chung, Kwun-Bum

2017-09-14

Tungsten-indium-zinc-oxide thin-film transistors (WIZO-TFTs) were fabricated using a radio frequency (RF) co-sputtering system with two types of source/drain (S/D)-electrode material of conducting WIZO (homojunction structure) and the indium-tin oxide (ITO) (heterojunction structure) on the same WIZO active-channel layer. The electrical properties of the WIZO layers used in the S/D electrode and the active-channel layer were adjusted through oxygen partial pressure during the deposition process. To explain enhancements of the device performance and stability of the homojunction-structured WIZO-TFT, a systematic investigation of correlation between device performance and physical properties at the interface between the active layer and the S/D electrodes such as the contact resistance, surface/interfacial roughness, interfacial-trap density, and interfacial energy-level alignments was conducted. The homojunction-structured WIZO-TFT exhibited a lower contact resistance, smaller interfacial-trap density, and flatter interfacial roughness than the WIZO-TFT with the heterojunction structure. The 0.09 eV electron barrier of the homojunction-structured WIZO-TFT is lower than the 0.21 eV value that was obtained for the heterojunction-structured WIZO-TFT. This reduced electron barrier may be attributed to enhancements of device performance and stability, that are related to the carrier transport.

Actinide oxide photodiode and nuclear battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sykora, Milan; Usov, Igor

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxidesmore » are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.« less

Screen-printed calcium-birnessite electrodes for water oxidation at neutral pH and an "electrochemical harriman series".

PubMed

Lee, Seung Y; González-Flores, Diego; Ohms, Jonas; Trost, Tim; Dau, Holger; Zaharieva, Ivelina; Kurz, Philipp

2014-12-01

A mild screen-printing method was developed to coat conductive oxide surfaces (here: fluorine-doped tin oxide) with micrometer-thick layers of presynthesized calcium manganese oxide (Ca-birnessite) particles. After optimization steps concerning the printing process and layer thickness, electrodes were obtained that could be used as corrosion-stable water-oxidizing anodes at pH 7 to yield current densities of 1 mA cm(-2) at an overpotential of less than 500 mV. Analyses of the electrode coatings of optimal thickness (≈10 μm) indicated that composition, oxide phase, and morphology of the synthetic Ca-birnessite particles were hardly affected by the screen-printing procedure. However, a more detailed analysis by X-ray absorption spectroscopy revealed small modifications of both the Mn redox state and the structure at the atomic level, which could affect functional properties such as proton conductivity. Furthermore, the versatile new screen-printing method was used for a comparative study of various transition-metal oxides concerning electrochemical water oxidation under "artificial leaf conditions" (neutral pH, fairly low overpotential and current density), for which a general activity ranking of RuO2 >Co3 O4 ≈(Ca)MnOx ≈NiO was observed. Within the group of screened manganese oxides, Ca-birnessite performed better than "Mn-only materials" such as Mn2 O3 and MnO2 . © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

NASA Astrophysics Data System (ADS)

Greene, Andrew; Madisetti, Shailesh; Nagaiah, Padmaja; Yakimov, Michael; Tokranov, Vadim; Moore, Richard; Oktyabrsky, Serge

2012-12-01

The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap state density (Dit) at the III-V/high-k oxide interface. This InAs surface was subjected to various cleaning processes to effectively reduce native oxides before atomic layer deposition (ALD). Ammonium sulfide pre-cleaning and trimethylaluminum/water ALD were used in conjunction to provide a clean interface and annealing in forming gas (FG) at 350 °C resulted in an optimized fabrication for n-GaSb/InAs/high-k gate stacks. Interface trap density, Dit ≈ 2-3 × 1012 cm-2eV-1 resided near the n-GaSb conductance band which was extracted and compared with three different methods. Conductance-voltage-frequency plots showed efficient Fermi level movement and a sub-threshold slope of 200 mV/dec. A composite high-k oxide process was also developed using ALD of Al2O3 and HfO2 resulting in a Dit ≈ 6-7 × 1012 cm-2eV-1. Subjecting these samples to a higher (450 °C) processing temperature results in increased oxidation and a thermally unstable interface. p-GaSb displayed very fast minority carrier generation/recombination likely due to a high density of bulk traps in GaSb.

Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gibson, Andrew J.; Temperton, Robert H.; Handrup, Karsten

2014-06-21

The interaction of the dye molecule N3 (cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4′-dicarbo-xylato) -ruthenium(II)) with the ultra-thin oxide layer on a AlNi(110) substrate, has been studied using synchrotron radiation based photoelectron spectroscopy, resonant photoemission spectroscopy, and near edge X-ray absorption fine structure spectroscopy. Calibrated X-ray absorption and valence band spectra of the monolayer and multilayer coverages reveal that charge transfer is possible from the molecule to the AlNi(110) substrate via tunnelling through the ultra-thin oxide layer and into the conduction band edge of the substrate. This charge transfer mechanism is possible from the LUMO+2 and 3 in the excited state but not from the LUMO,more » therefore enabling core-hole clock analysis, which gives an upper limit of 6.0 ± 2.5 fs for the transfer time. This indicates that ultra-thin oxide layers are a viable material for use in dye-sensitized solar cells, which may lead to reduced recombination effects and improved efficiencies of future devices.« less

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen

2016-04-01

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

NASA Astrophysics Data System (ADS)

Wan, Chang Jin; Zhu, Li Qiang; Wan, Xiang; Shi, Yi; Wan, Qing

2016-01-01

The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Chang Jin; Wan, Qing, E-mail: wanqing@nju.edu.cn, E-mail: yshi@nju.edu.cn; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201

The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2015-09-08

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Analysis of Zinc Oxide Thin Films Synthesized by Sol-Gel via Spin Coating

NASA Astrophysics Data System (ADS)

Wolgamott, Jon Carl

Transparent conductive oxides are gaining an increasingly important role in optoelectronic devices such as solar cells. Doped zinc oxide is a candidate as a low cost and nontoxic alternative to tin doped indium oxide. Lab results have shown that both n-type and p-type zinc oxide can be created on a small scale. This can allow zinc oxide to be used as either an electrode as well as a buffer layer to increase efficiency and protect the active layer in solar cells. Sol-gel synthesis is emerging as a low temperature, low cost, and resource efficient alternative to producing transparent conducting oxides such as zinc oxide. For sol-gel derived zinc oxide thin films to reach their potential, research in this topic must continue to optimize the known processing parameters and expand to new parameters to tighten control and create novel processing techniques that improve performance. The processing parameters of drying and annealing temperatures as well as cooling rate were analyzed to see their effect on the structure of the prepared zinc oxide thin films. There were also preliminary tests done to modify the sol-gel process to include silver as a dopant to produce a p-type thin film. The results from this work show that the pre- and post- heating temperatures as well as the cooling rate all play their own unique role in the crystallization of the film. Results from silver doping show that more work needs to be done to create a sol-gel derived p-type zinc oxide thin film.

Effects of ultrathin oxides in conducting MIS structures on GaAs

NASA Technical Reports Server (NTRS)

Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

1978-01-01

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Nanocrystal-polymer nanocomposite electrochromic device

DOEpatents

Milliron, Delia; Runnerstrom, Evan; Helms, Brett; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

2015-12-08

Described is an electrochromic nanocomposite film comprising a solid matrix of an oxide based material, the solid matrix comprising a plurality of transparent conducting oxide (TCO) nanostructures dispersed in the solid matrix and a lithium salt dispersed in the solid matrix. Also described is a near infrared nanostructured electrochromic device having a functional layer comprising the electrochromic nanocomposite film.

Response Of A MOSFET To A Cosmic Ray

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John A.

1988-01-01

Theoretical paper discusses response of enhancement-mode metal oxide/semiconductor field-effect transistor to cosmic-ray ion that passes perpendicularly through gate-oxide layers. Even if ion causes no permanent damage, temporary increase of electrical conductivity along track of ion large enough and long enough to cause change in logic state in logic circuit containing MOSFET.

Conductive buffer layers and overlayers for the thermal stability of coated conductors

NASA Astrophysics Data System (ADS)

Cantoni, C.; Aytug, T.; Verebelyi, D. T.; Paranthaman, M.; Specht, E. D.; Norton, D. P.; Christen, D. K.

2001-03-01

We analyze fundamental issues related to the thermal and electrical stability of a coated conductor during its operation. We address the role of conductive buffer layers in the stability of Ni-based coated conductors, and the effect of a metallic cap layer on the electrical properties of Ni alloy-based superconducting tapes. For the first case we report on the fabrication of a fully conductive RABiTS architecture formed of bilayers of conductive oxides SrRuO3 and LaNiO3 on textured Ni tapes. For the second case we discuss measurements of current-voltage relations on Ag/YBa2Cu3O7-d and Cu/Ag/ YBa2Cu3O7-d prototype multilayers on insulating substrates. Limitations on the overall tape structure and properties that are posed by the stability requirement are presented.

Characteristics of indium-tin-oxide (ITO) nanoparticle ink-coated layers recycled from ITO scraps

NASA Astrophysics Data System (ADS)

Cha, Seung-Jae; Hong, Sung-Jei; Lee, Jae Yong

2015-09-01

This study investigates the characteristics of an indium-tin-oxide (ITO) ink layer that includes nanoparticles synthesized from ITO target scraps. The particle size of the ITO nanoparticle was less than 15 nm, and the crystal structure was cubic with a (222) preferred orientation. Also, the composition ratio of In to Sn was 92.7 to 7.3 in weight. The ITO nanoparticles were well dispersed in the ink solvent to formulate a 20-wt% ITO nanoparticle ink. Furthermore, the ITO nanoparticle ink was coated onto a glass substrate, followed by heat-treatment at 600 °C. The layer showed good sheet resistances below 400 Ω/□ and optical transmittances higher than 88% at 550 nm. Thus, we can conclude that the characteristics of the layer make it highly applicable to a transparent conductive electrode.

Curtailing Perovskite Processing Limitations via Lamination at the Perovskite/Perovskite Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Hest, Marinus F; Moore, David; Klein, Talysa

Standard layer-by-layer solution processing methods constrain lead-halide perovskite device architectures. The layer below the perovskite must be robust to the strong organic solvents used to form the perovskite while the layer above has a limited thermal budget and must be processed in nonpolar solvents to prevent perovskite degradation. To circumvent these limitations, we developed a procedure where two transparent conductive oxide/transport material/perovskite half stacks are independently fabricated and then laminated together at the perovskite/perovskite interface. Using ultraviolet-visible absorption spectroscopy, external quantum efficiency, X-ray diffraction, and time-resolved photoluminesence spectroscopy, we show that this procedure improves photovoltaic properties of the perovskite layer.more » Applying this procedure, semitransparent devices employing two high-temperature oxide transport layers were fabricated, which realized an average efficiency of 9.6% (maximum: 10.6%) despite series resistance limitations from the substrate design. Overall, the developed lamination procedure curtails processing constraints, enables new device designs, and affords new opportunities for optimization.« less

The thermomechanical stability of micro-solid oxide fuel cells fabricated on anodized aluminum oxide membranes

NASA Astrophysics Data System (ADS)

Kwon, Chang-Woo; Lee, Jae-Il; Kim, Ki-Bum; Lee, Hae-Weon; Lee, Jong-Ho; Son, Ji-Won

2012-07-01

The thermomechanical stability of micro-solid oxide fuel cells (micro-SOFCs) fabricated on an anodized aluminum oxide (AAO) membrane template is investigated. The full structure consists of the following layers: AAO membrane (600 nm)/Pt anode/YSZ electrolyte (900 nm)/porous Pt cathode. The utilization of a 600-nm-thick AAO membrane significantly improves the thermomechanical stability due to its well-known honeycomb-shaped nanopore structure. Moreover, the Pt anode layer deposited in between the AAO membrane and the YSZ electrolyte preserves its integrity in terms of maintaining the triple-phase boundary (TPB) and electrical conductivity during high-temperature operation. Both of these results guarantee thermomechanical stability of the micro-SOFC and extend the cell lifetime, which is one of the most critical issues in the fabrication of freestanding membrane-type micro-SOFCs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Yang; Piper, Daniela M.; Gu, Meng

Surface modification of silicon nanoparticle via molecular layer deposition (MLD) has been recently proved to be an effective way for dramatically enhancing the cyclic performance in lithium ion batteries. However, the fundamental mechanism as how this thin layer of coating function is not known, which is even complicated by the inevitable presence of native oxide of several nanometers on the silicon nanoparticle. Using in-situ TEM, we probed in detail the structural and chemical evolution of both uncoated and coated silicon particles upon cyclic lithiation/delithation. We discovered that upon initial lithiation, the native oxide layer converts to crystalline Li2O islands, whichmore » essentially increases the impedance on the particle, resulting in ineffective lithiation/delithiation, and therefore low coulombic efficiency. In contrast, the alucone MLD coated particles show extremely fast, thorough and highly reversible lithiation behaviors, which are clarified to be associated with the mechanical flexibility and fast Li+/e- conductivity of the alucone coating. Surprisingly, the alucone MLD coating process chemically changes the silicon surface, essentially removing the native oxide layer and therefore mitigates side reaction and detrimental effects of the native oxide. This study provides a vivid picture of how the MLD coating works to enhance the coulombic efficiency and preserve capacity and clarifies the role of the native oxide on silicon nanoparticles during cyclic lithiation and delithiation. More broadly, this work also demonstrated that the effect of the subtle chemical modification of the surface during the coating process may be of equal importance as the coating layer itself.« less

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

NASA Astrophysics Data System (ADS)

Ojo, A. A.; Dharmadasa, I. M.

2017-08-01

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

Graphene oxide-zinc oxide nanocomposite as channel layer for field effect transistors: effect of ZnO loading on field effect transport.

PubMed

Jilani, S Mahaboob; Banerji, Pallab

2014-10-08

The effects of ZnO on graphene oxide (GO)-ZnO nanocomposites are investigated to tune the conductivity in GO under field effect regime. Zinc oxides with different concentrations from 5 wt % to 25 wt % are used in a GO matrix to increase the conductivity in the composite. Six sets of field effect transistors with pristine GO and GO-ZnO as the channel layer at varying ZnO concentrations were fabricated. From the transfer characteristics, it is observed that GO exhibited an insulating behavior and the transistors with low ZnO (5 wt %) concentration initially showed p-type conductivity that changes to n-type with increases in ZnO loading. This n-type dominance in conductivity is a consequence of the transfer of electrons from ZnO to the GO matrix. From X-ray photoelectron spectroscopic measurements, it is observed that the progressive reduction in the C-OH oxygen group took place with increases in ZnO loading. Thus, from insulating GO to p- and then n-type, conductivity in GO could be achieved with reduction in the C-OH oxygen group by photocatalytic reduction of GO with varying degrees of ZnO. The restoration of sp(2) electron network in the GO matrix with the anchoring of ZnO nanostructures was observed from Raman spectra. From UV-visible spectra, the band gap in pristine GO was found to be 3.98 eV and reduced to 2.8 eV with increase in ZnO attachment.

Systematic Doping of Cobalt into Layered Manganese Oxide Sheets Substantially Enhances Water Oxidation Catalysis.

PubMed

McKendry, Ian G; Thenuwara, Akila C; Shumlas, Samantha L; Peng, Haowei; Aulin, Yaroslav V; Chinnam, Parameswara Rao; Borguet, Eric; Strongin, Daniel R; Zdilla, Michael J

2018-01-16

The effect on the electrocatalytic oxygen evolution reaction (OER) of cobalt incorporation into the metal oxide sheets of the layered manganese oxide birnessite was investigated. Birnessite and cobalt-doped birnessite were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and conductivity measurements. A cobalt:manganese ratio of 1:2 resulted in the most active catalyst for the OER. In particular, the overpotential (η) for the OER was 420 mV, significantly lower than the η = 780 mV associated with birnessite in the absence of Co. Furthermore, the Tafel slope for Co/birnessite was 81 mV/dec, in comparison to a Tafel slope of greater than 200 mV/dec for birnessite. For chemical water oxidation catalysis, an 8-fold turnover number (TON) was achieved (h = 70 mmol of O 2 /mol of metal). Density functional theory (DFT) calculations predict that cobalt modification of birnessite resulted in a raising of the valence band edge and occupation of that edge by holes with enhanced mobility during catalysis. Inclusion of extra cobalt beyond the ideal 1:2 ratio was detrimental to catalysis due to disruption of the layered structure of the birnessite phase.

Measurement of volume resistivity/conductivity of metallic alloy in inhibited seawater by optical interferometry techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habib, K.

2011-03-15

Optical interferometry techniques were used for the first time to measure the volume resistivity/conductivity of carbon steel samples in seawater with different concentrations of a corrosion inhibitor. In this investigation, the real-time holographic interferometry was carried out to measure the thickness of anodic dissolved layer or the total thickness, U{sub total}, of formed oxide layer of carbon steel samples during the alternating current (ac) impedance of the samples in blank seawater and in 5-20 ppm TROS C-70 inhibited seawater, respectively. In addition, a mathematical model was derived in order to correlate between the ac impedance (resistance) and the surface (orthogonal)more » displacement of the surface of the samples in solutions. In other words, a proportionality constant [resistivity ({rho}) or conductivity ({sigma})= 1/{rho}] between the determined ac impedance [by electrochemical impedance spectroscopy (EIS) technique] and the orthogonal displacement (by the optical interferometry techniques) was obtained. The value of the resistivity of the carbon steel sample in the blank seawater was found similar to the value of the resistivity of the carbon steel sample air, around 1 x 10{sup -5}{Omega} cm. On the contrary, the measured values of the resistivity of the carbon steel samples were 1.85 x 10{sup 7}, 3.35 x 10{sup 7}, and 1.7 x 10{sup 7}{Omega} cm in 5, 10, and 20 ppm TROS C-70 inhibited seawater solutions, respectively. Furthermore, the determined value range of {rho} of the formed oxide layers, from 1.7 x 10{sup 7} to 3.35 x 10{sup 7}{Omega} cm, is found in a reasonable agreement with the one found in literature for the Fe oxide-hydroxides, i.e., goethite ({alpha}-FeOOH) and for the lepidocrocite ({gamma}-FeOOH), 1 x 10{sup 9}{Omega} cm. The {rho} value of the Fe oxide-hydroxides, 1 x 10{sup 9}{Omega} cm, was found slightly higher than the {rho} value range of the formed oxide layer of the present study. This is because the former value was determined by a dc method rather than by an electromagnetic method, i.e., holographic interferometry with applications of EIS, i.e., ac method. As a result, erroneous measurements were recorded due to the introduction of heat to Fe oxide-hydroxides.« less

Solution-deposited F:SnO₂/TiO₂ as a base-stable protective layer and antireflective coating for microtextured buried-junction H₂-evolving Si photocathodes.

PubMed

Kast, Matthew G; Enman, Lisa J; Gurnon, Nicholas J; Nadarajah, Athavan; Boettcher, Shannon W

2014-12-24

Protecting Si photocathodes from corrosion is important for developing tandem water-splitting devices operating in basic media. We show that textured commercial Si-pn(+) photovoltaics protected by solution-processed semiconducting/conducting oxides (plausibly suitable for scalable manufacturing) and coupled to thin layers of Ir yield high-performance H2-evolving photocathodes in base. They also serve as excellent test structures to understand corrosion mechanisms and optimize interfacial electrical contacts between various functional layers. Solution-deposited TiO2 protects Si-pn(+) junctions from corrosion for ∼24 h in base, whereas junctions protected by F:SnO2 fail after only 1 h of electrochemical cycling. Interface layers consisting of Ti metal and/or the highly doped F:SnO2 between the Si and TiO2 reduce Si-emitter/oxide/catalyst contact resistance and thus increase fill factor and efficiency. Controlling the oxide thickness led to record photocurrents near 35 mA cm(-2) at 0 V vs RHE and photocathode efficiencies up to 10.9% in the best cells. Degradation, however, was not completely suppressed. We demonstrate that performance degrades by two mechanisms, (1) deposition of impurities onto the thin catalyst layers, even from high-purity base, and (2) catastrophic failure via pinholes in the oxide layers after several days of operation. These results provide insight into the design of hydrogen-evolving photoelectrodes in basic conditions, and highlight challenges.

Fabrication of interface-modified ramp-edge junction on YBCO ground plane with multilayer structure

NASA Astrophysics Data System (ADS)

Wakana, H.; Adachi, S.; Kamitani, A.; Sugiyama, H.; Sugano, T.; Horibe, M.; Ishimaru, Y.; Tarutani, Y.; Tanabe, K.

2003-10-01

We examined the fabrication conditions to obtain high-quality ramp-edge Josephson junctions on a liquid-phase-epitaxy YBa 2Cu 3O y (LPE-YBCO) ground plane, in particular, focusing on the fabrication of a suitable insulating layer on the ground plane and the post-annealing conditions to load oxygen to the ground plane. A (LaAlO 3) 0.3-(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) insulating film on the ground planes exhibited a conductance ranging from 10 -4 to 10 -8 S after deposition of an upper superconducting film, suggesting existence of some leak paths through the LSAT insulating layer. By introducing approximately 30 nm thick SrTiO 3 (STO) buffer layers on both side of the LSAT insulating layer. We reproducibly obtained a conductance lower than 10 -8 S. The dielectric constant of the STO/LSAT/STO layer was 32, which was slightly larger than that of the single LSAT layer. It was found that a very slow cooling rate of 1.0 °C/h in oxygen was needed to fully oxidize the ground plane through the STO/LSAT/STO insulating layers, while the oxidation time could be effectively reduced by introducing via holes in the insulating layer at an interval of 200 μm. Ramp-edge junctions on LPE-YBCO ground planes with STO/LSAT/STO insulating layers exhibited a 1 σ-spread in Ic of 8% for 100-junction series-arrays and a sheet inductance of 0.7 pH/□ at 4.2 K.

Does the conductivity of interconnect coatings matter for solid oxide fuel cell applications?

NASA Astrophysics Data System (ADS)

Goebel, Claudia; Fefekos, Alexander G.; Svensson, Jan-Erik; Froitzheim, Jan

2018-04-01

The present work aims to quantify the influence of typical interconnect coatings used for solid oxide fuel cells (SOFC) on area specific resistance (ASR). To quantify the effect of the coating, the dependency of coating thickness on the ASR is examined on Crofer 22 APU at 600 °C. Three different Co coating thicknesses are investigated, 600 nm, 1500 nm, and 3000 nm. Except for the reference samples, the material is pre-oxidized prior to coating to mitigate the outward diffusion of iron and consequent formation of poorly conducting (Co,Fe)3O4 spinel. Exposures are carried out at 600 °C in stagnant laboratory air for 500 h and subsequent ASR measurements are performed. Additionally the microstructure is investigated with scanning electron microscopy (SEM). On all pre-oxidized samples, a homogenous dense Co3O4 top layer is observed beneath which a thin layer of Cr2O3 is present. As the ASR values range between 7 and 12 mΩcm2 for all pre-oxidized samples, even though different Co3O4 thicknesses are observed, the results strongly suggest that for most applicable cases the impact of the coating on ASR is negligible and the main contributor is Cr2O3.

Microchannel plate detector and methods for their fabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elam, Jeffrey W.; Mane, Anil U.; Peng, Qing

A multi-component tunable resistive coating and methods of depositing the coating on the surfaces of a microchannel plate (MCP) detector. The resistive coating composed of a plurality of alternating layers of a metal oxide resistive component layer and a conductive component layer composed of at least one of a metal, a metal nitride and a metal sulfide. The coating may further include an emissive layer configured to produce a secondary electron emission in response to a particle interacting with the MCP and a neutron-absorbing layer configured to respond to a neutron interacting with the MCP.

Investigation of Electrical and Optical Properties of Highly Transparent TCO/Ag/TCO Multilayer.

PubMed

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Ahn, Shihyun; Hussain, Shahzada Qamar; Park, Jinjoo; Jung, Junhee; Lee, Chan; Song, Bong-Shik; Choi, Byoungdeog; Lee, Youn-Jung; Iftiquar, S M; Yi, Junsin

2015-03-01

Transparent conductive oxides (TCOs) have been widely used as transparent electrodes for opto-electronic devices, such as solar cells, flat-panel displays, and light-emitting diodes, because of their unique characteristics of high optical transmittance and low electrical resistivity. Among various TCO materials, zinc oxide based films have recently received much attention because they have advantages over commonly used indium and tin-based oxide films. Most TCO films, however, exhibit valleys of transmittance in the wavelength range of 550-700 nm, lowering the average transmittance in the visible region and decreasing short-circuit current (Isc) of solar cells. A TCO/Ag/TCO multi-layer structure has emerged as an attractive alternative because it provides optical characteristics without the valley of transmittance compared with a 100-nm-thick single-layer TCO. In this article, we report the electrical, optical and surface properties of TCO/Ag/TCO. These multi-layers were deposited at room temperature with various Ag film thicknesses from 5 to 15 nm while the thickness of TCO thin film was fixed at 40 nm. The TCO/Ag/TCO multi-layer with a 10-nm-thick Ag film showed optimum transmittance in the visible (400-800 nm) wavelength region. These multi-layer structures have advantages over TCO layers of the same thickness.

Preparation of ceramic coating on Ti substrate by Plasma electrolytic oxidation in different electrolytes and evaluation of its corrosion resistance

NASA Astrophysics Data System (ADS)

Shokouhfar, M.; Dehghanian, C.; Baradaran, A.

2011-01-01

Ceramic oxide coatings (titania) were produced on Ti by micro-arc oxidation in different aluminate and carbonate based electrolytes. This process was conducted under constant pulsed DC voltage condition. The effect of KOH and NaF in aluminate based solution was also studied. The surface morphology, growth and phase composition of coatings were investigated using scanning electron microscope and X-ray diffraction. Corrosion behavior of the coatings was also examined by potentiodynamic polarization and electrochemical impedance spectroscopy. It was found that the sparking initiation voltage (spark voltage) had a significant effect on the form and properties of coatings. Coatings obtained from potassium aluminate based solution had a lower spark voltage, higher surface homogeneity and a better corrosion resistance than the carbonate based solution. Addition of NaF instead of KOH had improper effects on the homogeneity and adhesion of coatings which in turn caused a poor corrosion protection behavior of the oxide layer. AC impedance curves showed two time constants which is an indication of the coatings with an outer porous layer and an inner compact layer.

Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

NASA Astrophysics Data System (ADS)

Lee, Yueh-Lin; Chuang, Jia-Hao; Huang, Tzu-Hsuan; Ho, Chong-Long; Wu, Meng-Chyi

2013-03-01

Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

Effects of UV Aging on the Cracking of Titanium Oxide Layer on Poly(ethylene terephthalate) Substrate: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Chao; Gray, Matthew H.; Tirawat, Robert

Thin oxide and metal films deposited on polymer substrates is an emerging technology for advanced reflectors for concentrated solar power applications, due to their unique combination of light weight, flexibility and inexpensive manufacture. Thus far, there is little knowledge on the mechanical integrity or structural persistence of such multi-layer thin film systems under long-term environmental aging. In this paper, the cracking of a brittle titanium dioxide layer deposited onto elasto-plastic poly(ethylene terephthalate) (PET) substrate is studied through a combination of experiment and modeling. In-situ fragmentation tests have been conducted to monitor the onset and evolution of cracks both on pristinemore » and on samples aged with ultraviolet (UV) light. An analytical model is presented to simulate the cracking behavior and to predict the effects of UV aging. Based on preliminary experimental observation, the effect of aging is divided into three aspects and analyzed independently: mechanical property degradation of the polymer substrate; degradation of the interlayer between substrate and oxide coating; and internal stress-induced cracks on the oxide coating.« less

Tuning optical properties of transparent conducting barium stannate by dimensional reduction

DOE PAGES

Li, Yuwei; Zhang, Lijun; Ma, Yanming; ...

2015-01-30

We report calculations of the electronic structure and optical properties of doped n-type perovskite BaSnO 3 and layered perovskites. While doped BaSnO 3 retains its transparency for energies below the valence to conduction band onset, the doped layered compounds exhibit below band edge optical conductivity due to transitions from the lowest conduction band. This gives absorption in the visible for Ba 2SnO 4. It is important to minimize this phase in transparent conducting oxide (TCO) films. Ba 3Sn 2O 7 and Ba 4Sn 3O 10 have strong transitions only in the red and infrared, respectively. Thus, there may be opportunitiesmore » for using these as wavelength filtering TCO.« less

Fabrication of a transparent conducting electrode based on graphene/silver nanowires via layer-by-layer method for organic photovoltaic devices.

PubMed

Tugba Camic, B; Oytun, Faruk; Hasan Aslan, M; Jeong Shin, Hee; Choi, Hyosung; Basarir, Fevzihan

2017-11-01

A solution-processed transparent conducting electrode was fabricated via layer-by-layer (LBL) deposition of graphene oxide (GO) and silver nanowires (Ag NWs). First, graphite was oxidized with a modified Hummer's method to obtain negatively-charged GO sheets, and Ag NWs were functionalized with cysteamine hydrochloride to acquire positively-charged silver nanowires. Oppositely-charged GO and Ag NWs were then sequentially coated on a 3-aminopropyltriethoxysilane modified glass substrate via LBL deposition, which provided highly controllable thin films in terms of optical transmittance and sheet resistance. Next, the reduction of GO sheets was performed to improve the electrical conductivity of the multilayer films. The resulting GO/Ag NWs multilayer was characterized by a UV-Vis spectrometer, field emission scanning electron microscope (FE-SEM), optical microscope (OM) and sheet resistance using a four-point probe method. The best result was achieved with a 2-bilayer film, resulting in a sheet resistance of 6.5Ω sq -1 with an optical transmittance of 78.2% at 550nm, which values are comparable to those of commercial ITO electrodes. The device based on a 2-bilayer hybrid film exhibited the highest device efficiency of 1.30% among the devices with different number of graphene/Ag NW LBL depositions. Copyright © 2017 Elsevier Inc. All rights reserved.

Strong enhancement of the luminescence decay time of isoelectronic centers in GaP:N at low temperatures

NASA Astrophysics Data System (ADS)

St-Jean, Philippe; Ethier-Majcher, Gabriel; Bergeron, Alaric; Francoeur, Sebastien

2013-03-01

We report (i)- results from ac impedance measurements obtained for intrinsic indium oxide films, grown under O2-rich conditions, (ii)- current-voltage (I-V) curves for p-n homojunctions fabricated by sequential growth of a 200 nm thick p-type In2O3 layer on a 400 nm thick n-type In2O3, and (iii)- capacitance-voltage (C-V) curves for these junctions. Impedance as well as I-V and C-V measurements were performed under UV irradiation and in darkness. We find two distinct contributions to the ac conductivity. One of them is brought about by grain boundaries, and the other one by inversion layers, which are on grain surfaces. In addition, we have found that photocurrents relax extremely slowly in these films. All of this fits consistently within a model in which mobile holes in inversion layers are responsible for p-type dc conductivity in intrinsic indium oxide films grown under O2-rich conditions. Such mechanism might be important in other polycrystalline thin films which have a large number of oxidizing defects at grain boundaries. We acknowledge support from grant MAT2012-38213-C02-01, from the Ministerio de Economia y Competividad, Spain.

High temperature insulation barrier composite

NASA Technical Reports Server (NTRS)

Onstott, Joseph W. (Inventor)

1989-01-01

A composite material suitable for providing insulation for the nozzle structure of the Space Shuttle and other similar surfaces is disclosed. The composite layer is comprised of an outer skin layer of nickel chromium and an interleaved inner region comprising a top layer of nickel chromium foil which acts as a primary convective shield. There are at least two layers of alumina batting adjacent to the layers of silicon carbide fabric. An additional layer of nickel chromium foil is used as a secondary convective shield. The composite is particularly advantageous for use as nozzle insulation because of its ability to withstand high reentry temperatures, its flexibility, oxidation resistance, low conductivity, and light weight.

Transparent resistive switching memory using aluminum oxide on a flexible substrate

NASA Astrophysics Data System (ADS)

Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

2016-02-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Development of new metal-oxide thin film gas sensors by conductivity and workfunction correlations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doll, T.; Mutschall, D.; Winter, R.

1996-12-31

Commercially available semiconducting gas sensors usually are based on tin dioxide, although there is a wide variety of metal oxides with capabilities for gas sensing. This derives from restrictions to predict the gas sensitivity under real conditions from clean surface measurements or sensitivity deviations due to different preparation techniques. Hence tedious sample variation and testing is required. It is known that beside pure conductivity studies, combined methods provide a better distinction between preparation-dependent and general chemical effects. For samples with a polycrystalline grain size smaller than the Debye length of the material the correlation of workfunction responses A{Delta}{Phi} to conductivitymore » measurements with the relation {Delta}{Phi} {approximately} log G is one powerful combination. In the present paper, this comparison is shown for nickel oxide layers prepared in two different ways: Reactive sputtering, which leads to partly polycrystalline layers of grain sizes of about 5 to 15 nm according to, and amorphous nickel oxide prepared by ozone enhanced molecular beam epitaxy. The work function and conductivity responses to H{sub 2}, NH{sub 3}, NO{sub 2}, SO{sub 2}, CO and Cl{sub 2} in synthetic air show a very similar sensitivity for the amorphous and the polycrystalline nickeloxides which indicates that the above mentioned correlation range includes amorphous states, too.« less

Effect of A-Site Cation Ordering on Chemical Stability, Oxygen Stoichiometry and Electrical Conductivity in Layered LaBaCo2O5+δ Double Perovskite

PubMed Central

Bernuy-Lopez, Carlos; Høydalsvik, Kristin; Einarsrud, Mari-Ann; Grande, Tor

2016-01-01

The effect of the A-site cation ordering on the chemical stability, oxygen stoichiometry and electrical conductivity in layered LaBaCo2O5+δ double perovskite was studied as a function of temperature and partial pressure of oxygen. Tetragonal A-site cation ordered layered LaBaCo2O5+δ double perovskite was obtained by annealing cubic A-site cation disordered La0.5Ba0.5CoO3-δ perovskite at 1100 °C in N2. High temperature X-ray diffraction between room temperature (RT) and 800 °C revealed that LaBaCo2O5+δ remains tetragonal during heating in oxidizing atmosphere, but goes through two phase transitions in N2 and between 450 °C and 675 °C from tetragonal P4/mmm to orthorhombic Pmmm and back to P4/mmm due to oxygen vacancy ordering followed by disordering of the oxygen vacancies. An anisotropic chemical and thermal expansion of LaBaCo2O5+δ was demonstrated. La0.5Ba0.5CoO3-δ remained cubic at the studied temperature irrespective of partial pressure of oxygen. LaBaCo2O5+δ is metastable with respect to La0.5Ba0.5CoO3-δ at oxidizing conditions inferred from the thermal evolution of the oxygen deficiency and oxidation state of Co in the two materials. The oxidation state of Co is higher in La0.5Ba0.5CoO3-δ resulting in a higher electrical conductivity relative to LaBaCo2O5+δ. The conductivity in both materials was reduced with decreasing partial pressure of oxygen pointing to a p-type semiconducting behavior. PMID:28773279

Anti-reflective coating with a conductive indium tin oxide layer on flexible glass substrates.

PubMed

Sung, Yilin; Malay, Robert E; Wen, Xin; Bezama, Christian N; Soman, Varun V; Huang, Ming-Huang; Garner, Sean M; Poliks, Mark D; Klotzkin, David

2018-03-20

Flexible glass has many applications including photovoltaics, organic light-emitting device (OLED) lighting, and displays. Its ability to be processed in a roll-to-roll facility enables high-throughput continuous manufacturing compared to conventional glass processing. For photovoltaic, OLED lighting, and display applications, transparent conductors are required with minimal optical reflection losses. Here, we demonstrate an anti-reflective coating (ARC) that incorporates a useful transparent conductor that is realizable on flexible substrates. This reduces the average reflectivity to less than 6% over the visible band from normal incidence to incident angles up to 60°. This ARC is designed by the average uniform algorithm method. The coating materials consist of a multilayer stack of an electrically functional conductive indium tin oxide with conductivity 2.95×10 5   Siemens/m (31 Ω/□), and AlSiO 2 . The coatings showed modest changes in reflectivity and no delamination after 10,000 bending cycles. This demonstrates that effective conductive layers can be integrated into ARCs and can be realized on flexible glass substrates with proper design and process control.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

NASA Astrophysics Data System (ADS)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects.

PubMed

Jeon, Sanghun; Song, Ihun; Lee, Sungsik; Ryu, Byungki; Ahn, Seung-Eon; Lee, Eunha; Kim, Young; Nathan, Arokia; Robertson, John; Chung, U-In

2014-11-05

A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly efficient and bendable organic solar cells using a three-dimensional transparent conducting electrode

NASA Astrophysics Data System (ADS)

Wang, Wei; Bae, Tae-Sung; Park, Yeon Hyun; Kim, Dong Ho; Lee, Sunghun; Min, Guanghui; Lee, Gun-Hwan; Song, Myungkwan; Yun, Jungheum

2014-05-01

A three-dimensional (3D) transparent conducting electrode, consisting of a quasi-periodic array of discrete indium-tin-oxide (ITO) nanoparticles superimposed on a highly conducting oxide-metal-oxide multilayer using ITO and silver oxide (AgOx) as oxide and metal layers, respectively, is synthesized on a polymer substrate and used as an anode in highly flexible organic solar cells (OSCs). The 3D electrode is fabricated using vacuum sputtering sequences to achieve self-assembly of distinct ITO nanoparticles on a continuous ITO-AgOx-ITO multilayer at room-temperature without applying conventional high-temperature vapour-liquid-solid growth, solution-based nanoparticle coating, or complicated nanopatterning techniques. Since the 3D electrode enhances the hole-extraction rate in OSCs owing to its high surface area and low effective series resistance for hole transport, OSCs based on this 3D electrode exhibit a power conversion efficiency that is 11-22% higher than that achievable in OSCs by means of conventional planar ITO film-type electrodes. A record high efficiency of 6.74% can be achieved in a bendable OSC fabricated on a poly(ethylene terephthalate) substrate.A three-dimensional (3D) transparent conducting electrode, consisting of a quasi-periodic array of discrete indium-tin-oxide (ITO) nanoparticles superimposed on a highly conducting oxide-metal-oxide multilayer using ITO and silver oxide (AgOx) as oxide and metal layers, respectively, is synthesized on a polymer substrate and used as an anode in highly flexible organic solar cells (OSCs). The 3D electrode is fabricated using vacuum sputtering sequences to achieve self-assembly of distinct ITO nanoparticles on a continuous ITO-AgOx-ITO multilayer at room-temperature without applying conventional high-temperature vapour-liquid-solid growth, solution-based nanoparticle coating, or complicated nanopatterning techniques. Since the 3D electrode enhances the hole-extraction rate in OSCs owing to its high surface area and low effective series resistance for hole transport, OSCs based on this 3D electrode exhibit a power conversion efficiency that is 11-22% higher than that achievable in OSCs by means of conventional planar ITO film-type electrodes. A record high efficiency of 6.74% can be achieved in a bendable OSC fabricated on a poly(ethylene terephthalate) substrate. Electronic supplementary information (ESI) available: FE-SEM images of Ar plasma-treated PET surfaces, curve deconvolution of XPS Ag 3d5/2 spectra, refractive indices and extinction coefficients of the Ag and AgOx (O/Ag = 10 at%), changes in the specular reflections of the IAOI-NPA and IAI-NPA electrodes for different O/Ag atomic ratios and thicknesses of the AgOx layer, and comparisons between the Jsc values determined from simulated AM 1.5G illumination and IPCE spectra. See DOI: 10.1039/c3nr06755f

Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Jia, Quanxi

2005-07-26

A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

Fabrication of solid oxide fuel cell by electrochemical vapor deposition

DOEpatents

Brian, Riley; Szreders, Bernard E.

1989-01-01

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

High Temperature Superconducting Thick Films

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

2005-08-23

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

Influence of thermal annealing on the bulk scattering in giant-magnetoresistance spin-valve with nano-oxide layers

NASA Astrophysics Data System (ADS)

Nam, Chunghee; Jang, Youngman; Lee, Ki-Su; Shim, Jungjin; Cho, B. K.

2006-04-01

Based upon a bulk scattering model, we investigated the variation of giant magnetoresistance (GMR) behavior after thermal annealing at Ta=250 °C as a function of the top free layer thickness of a GMR spin valve with nano-oxide layers (NOLs). It was found that the enhancement of GMR ratio after thermal annealing is explained qualitatively in terms of the increase of active GMR region in the free layer and, simultaneously, the increase of intrinsic spin-scattering ratio. These effects are likely due to the improved specular reflection at the well-formed interface of NOL. Furthermore, we developed a modified phenomenological model for sheet conductance change (ΔG) in terms of the top free layer thickness. This modified model was found to be useful in the quantitative analysis of the variation of the active GMR region and the intrinsic spin-scattering properties. The two physical parameters were found to change consistently with the effects of thermal annealing on NOL.

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

NASA Astrophysics Data System (ADS)

Kuyama, Tomohiro; Eriguchi, Koji

2018-06-01

We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman’s effective medium approximation was employed for an optical model consisting of damaged and undamaged layers, which is applicable to an in-line monitoring by spectroscopic ellipsometry (SE). The optical thickness of the damaged layer — an oxidized layer — extended after plasma exposure, which was consistent with the results obtained by a diluted hydrofluoric acid (DHF) wet etching. The change in the conduction band edge of the damaged SiN films was presumed from two electrical techniques, i.e., current–voltage (I–V) measurement and time-dependent dielectric breakdown (TDDB) test with a constant voltage stress. The proposed techniques can be used for assigning the plasma-induced structural change in an SiN film widely used as an etch-protecting layer.

Selective Oxidation of Amorphous Carbon Layers without Damaging Embedded Single Wall Carbon Nanotube Bundles

NASA Astrophysics Data System (ADS)

Choi, Young Chul; Lim, Seong Chu

2013-11-01

Single wall carbon nanotubes (SWCNTs) were synthesized by arc discharge, and then purified by selective oxidation of amorphous carbon layers that were found to encase SWCNT bundles and catalyst metal particles. In order to remove selectively the amorphous carbon layers with SWCNTs being intact, we have systematically investigated the thermal treatment conditions; firstly, setting the temperature by measuring the activation energies of SWCNTs and amorphous carbon layers, and then, secondly, finding the optimal process time. As a consequence, the optimal temperature and time for the thermal treatment was found to be 460 °C and 20 min, respectively. The complete elimination of surrounding amorphous carbon layers makes it possible to efficiently disperse the SWCNT bundles, resulting in high absorbance of SWCNT-ink. The SWCNTs which were thermal-treated at optimized temperature (460 °C) and duration (20 min) showed much better crystallinity, dispersibility, and transparent conducting properties, compared with as-synthesized and the nanotubes thermal-treated at different experimental conditions.

The Morning NO x maximum in the forest atmosphere boundary layer

NASA Astrophysics Data System (ADS)

Alaghmand, M.; Shepson, P. B.; Starn, T. K.; Jobson, B. T.; Wallace, H. W.; Carroll, M. A.; Bertman, S. B.; Lamb, B.; Edburg, S. L.; Zhou, X.; Apel, E.; Riemer, D.; Stevens, P.; Keutsch, F.

2011-10-01

During the 1998, 2000, 2001, 2008, and 2009 summer intensives of the Program for Research on Oxidants: PHotochemistry, Emissions and Transport (PROPHET), ambient measurement of nitrogen oxides (NO + NO2 = NOx) were conducted. NO and NOx mole fractions displayed a diurnal pattern with NOx frequently highest in early morning. This pattern has often been observed in other rural areas. In this paper, we discuss the potential sources and contributing factors of the frequently observed morning pulse of NOx. Of the possible potential contributing factors to the observed morning pulse of NO and NOx, we find that surface-layer transport and slow upward mixing from soil emissions, related to the thermodynamic stability in the nocturnal boundary layer (NBL) before its morning breakup are the largest contributors. The morning NOx peak can significantly impact boundary layer chemistry, e.g. through production of HONO on surfaces, and by increasing the importance of NO3 chemistry in the morning boundary layer.

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

NASA Astrophysics Data System (ADS)

Li, Jeng-Ting; Tsai, Ho-Lin; Lai, Wei-Yao; Hwang, Weng-Sing; Chen, In-Gann; Chen, Jen-Sue

2018-04-01

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

PubMed Central

Hori, Tetsuro; Moritou, Hiroki; Fukuoka, Naoki; Sakamoto, Junki; Fujii, Akihiko; Ozaki, Masanori

2010-01-01

Organic thin-film solar cells with a conducting polymer (CP)/fullerene (C60) interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/poly(3-hexylthiophene) (PAT6)/Au have been improved by the insertion of molybdenum trioxide (VI) (MoO3) and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers. PMID:28883360

Atomic Layer Deposition of Metastable β-Fe 2 O 3 via Isomorphic Epitaxy for Photoassisted Water Oxidation

DOE PAGES

Emery, Jonathan D.; Schlepütz, Christian M.; Guo, Peijun; ...

2014-12-09

Here, we report the growth and photoelectrochemical (PEC) characterization of the uncommon bibyite phase of iron(III) oxide (β-Fe 2O 3) epitaxially stabilized via atomic layer deposition on an conductive, transparent, and isomorphic template (Sn-doped In 2O 3). Furthermore, as a photoanode, unoptimized β-Fe 2O 3 ultrathin films perform similarly to their ubiquitous α-phase (hematite) counterpart, but reveal a more ideal bandgap (1.8 eV), a ~0.1 V improved photocurrent onset potential, and longer wavelength (>600 nm) spectral response. Finally, stable operation under basic water oxidation justifies further exploration of this atypical phase and motivates the investigation of other unexplored metastable phasesmore » as new PEC materials.« less

Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

2017-01-01

Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

Fabrication of Vertically Aligned Carbon Nanotube or Zinc Oxide Nanorod Arrays for Optical Diffraction Gratings.

PubMed

Kim, Jeong; Kim, Sun Il; Cho, Seong-Ho; Hwang, Sungwoo; Lee, Young Hee; Hur, Jaehyun

2015-11-01

We report on new fabrication methods for a transparent, hierarchical, and patterned electrode comprised of either carbon nanotubes or zinc oxide nanorods. Vertically aligned carbon nanotubes or zinc oxide nanorod arrays were fabricated by either chemical vapor deposition or hydrothermal growth, in combination with photolithography. A transparent conductive graphene layer or zinc oxide seed layer was employed as the transparent electrode. On the patterned surface defined using photoresist, the vertically grown carbon nanotubes or zinc oxides could produce a concentrated electric field under applied DC voltage. This periodic electric field was used to align liquid crystal molecules in localized areas within the optical cell, effectively modulating the refractive index. Depending on the material and morphology of these patterned electrodes, the diffraction efficiency presented different behavior. From this study, we established the relationship between the hierarchical structure of the different electrodes and their efficiency for modulating the refractive index. We believe that this study will pave a new path for future optoelectronic applications.

Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

NASA Astrophysics Data System (ADS)

Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

2014-06-01

We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier

NASA Astrophysics Data System (ADS)

Al-Mahdawi, Muftah; Sahashi, Masashi

2014-01-01

We report on the observation of anisotropic magnetoresistance (AMR) in vertical asymmetric nano-contacts (NCs) made through AlOx nano-oxide layer (NOL) formed by ion-assisted oxidation method in the film stack of Co/AlOx-NOL/Pt. Analysis of NC formation was based on in situ conductive atomic force microscopy and transmission electron microscopy. Depending on the purity of NCs from Al contamination, we observed up to 29% AMR ratio at room temperature.

Towards deriving Ni-rich cathode and oxide-based anode materials from hydroxides by sharing a facile co-precipitation method.

PubMed

Qiu, Haifa; Du, Tengfei; Wu, Junfeng; Wang, Yonglong; Liu, Jian; Ye, Shihai; Liu, Sheng

2018-05-22

Although intensive studies have been conducted on layered transition metal oxide(TMO)-based cathode materials and metal oxide-based anode materials for Li-ion batteries, their precursors generally follow different or even complex synthesis routes. To share one route for preparing precursors of the cathode and anode materials, herein, we demonstrate a facile co-precipitation method to fabricate Ni-rich hydroxide precursors of Ni0.8Co0.1Mn0.1(OH)2. Ni-rich layered oxide of LiNi0.8Co0.1Mn0.1O2 is obtained by lithiation of the precursor in air. An NiO-based anode material is prepared by calcining the precursor or multi-walled carbon nanotubes (MWCNTs) incorporated precursors. The pre-addition of ammonia solution can simplify the co-precipitation procedures and the use of an air atmosphere can also make the heat treatment facile. LiNi0.8Co0.1Mn0.1O2 as the cathode material delivers a reversible capacity of 194 mA h g-1 at 40 mA g-1 and a notable cycling retention of 88.8% after 100 cycles at 200 mA g-1. This noticeable performance of the cathode arises from a decent particle morphology and high crystallinity of the layered oxides. As the anode material, the MWCNTs-incorporated oxides deliver a much higher reversible capacity of 811.1 mA h g-1 after 200 cycles compared to the pristine oxides without MWCNTs. The improvement on electrochemical performance can be attributed to synergistic effects from MWCNTs incorporation, including reinforced electronic conductivity, rich meso-pores and an alleviated volume effect. This facile and sharing method may offer an integrated and economical approach for commercial production of Ni-rich electrode materials for Li-ion batteries.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

PubMed

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

PubMed Central

Lu, Kuankuan; Li, Yuzhi; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-01-01

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al2O3) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al2O3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al2O3 PVL exhibited remarkable mobility of 33.5–220.1 cm2/Vs when channel length varies from 60 to 560 μm. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously. PMID:29584710

A high performance transparent resistive switching memory made from ZrO{sub 2}/AlON bilayer structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw

2016-04-11

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{sub 2}/ITO single layer device, the ITO/ZrO{sub 2}/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by formingmore » an asymmetrical conductive filament with the weakest part at the ZrO{sub 2}/AlON interface. Therefore, in the ITO/ZrO{sub 2}/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.« less

Enhanced Performance of GaN-Based Green Light-Emitting Diodes with Gallium-Doped ZnO Transparent Conducting Oxide

NASA Astrophysics Data System (ADS)

Oh, Min-Suk; Seo, Inseok

2014-04-01

Ga-doped ZnO (GZO) transparent conducting oxide was grown by oxygen plasma-enhanced pulsed laser deposition. GZO grown in the presence of oxygen radicals had resistivity of 1 × 10-3 Ω cm and average visible (500-700 nm) transmittance of 92.5%. A low specific contact resistance of 6.5 × 10-4 Ω cm2 of GZO on p-GaN was achieved by excimer laser annealing (ELA) treatment of p-GaN before GZO electrode deposition. The ELA-treated light emitting diode (LED) fabricated with the GZO electrode as a current-spreading layer resulted in light-output power enhanced by 56.2% at 100 mA compared with that fabricated with a conventional Ni/Au metal electrode. The high-light output and low degradation of light-output power were attributed to the decrease in contact resistance between the p-GaN layer and the GZO electrode and uniform current spreading over the p-GaN layer. In addition, low contact resistance results in a decrease of self-heat generation during current drive.

A novel cobalt-free layered GdBaFe 2O 5+ δ cathode for proton conducting solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Ding, Hanping; Xue, Xingjian

While cobalt-containing perovskite-type cathode materials facilitate the activation of oxygen reduction, they also suffer from problems like poor chemical stability in CO 2 and high thermal expansion coefficients. In this research, a cobalt-free layered GdBaFe 2O 5+ δ (GBF) perovskite was developed as a cathode material for protonic ceramic membrane fuel cells (PCMFCs) based on proton conducting electrolyte of stable BaZr 0.1Ce 0.7Y 0.2O 3- δ (BZCY7). The button cells of Ni-BZCY7|BZCY7|GBF were fabricated and characterized using complex impedance technique from 600 to 700 °C. An open-circuit potential of 1.007 V, maximum power density of 417 mW cm -2, and a low electrode polarization resistance of 0.18 Ω cm 2 were achieved at 700 °C. The results indicate that layered GBF perovskite is a good candidate for cobalt-free cathode material, while the developed Ni-BZCY7|BZCY7|GBF cell is a promising functional material system for solid oxide fuel cells.

Atomic and Molecular Layer Deposition for Enhanced Lithium Ion Battery Electrodes and Development of Conductive Metal Oxide/Carbon Composites

NASA Astrophysics Data System (ADS)

Travis, Jonathan

The performance and safety of lithium-ion batteries (LIBs) are dependent on interfacial processes at the positive and negative electrodes. For example, the surface layers that form on cathodes and anodes are known to affect the kinetics and capacity of LIBs. Interfacial reactions between the electrolyte and the electrodes are also known to initiate electrolyte combustion during thermal runaway events that compromise battery safety. Atomic layer deposition (ALD) and molecular layer deposition (MLD) are thin film deposition techniques based on sequential, self-limiting surface reactions. ALD and MLD can deposit ultrathin and conformal films on high aspect ratio and porous substrates such as composite particulate electrodes in lithium-ion batteries. The effects of electrode surface modification via ALD and MLD are studied using a variety of techniques. It was found that sub-nm thick coatings of Al2O 3 deposited via ALD have beneficial effects on the stability of LIB anodes and cathodes. These same Al2O3 ALD films were found to improve the safety of graphite based anodes through prevention of exothermic solid electrolyte interface (SEI) degradation at elevated temperatures. Ultrathin and conformal metal alkoxide polymer films known as "metalcones" were grown utilizing MLD techniques with trimethylaluminum (TMA) or titanium tetrachloride (TiCl4) and organic diols or triols, such as ethylene glycol (EG), glycerol (GL) or hydroquinone (HQ), as the reactants. Pyrolysis of these metalcone films under inert gas conditions led to the development of conductive metal oxide/carbon composites. The composites were found to contain sp2 carbon using micro-Raman spectroscopy in the pyrolyzed films with pyrolysis temperatures ≥ 600°C. Four point probe measurements demonstrated that the graphitic sp2 carbon domains in the metalcone films grown using GL and HQ led to significant conductivity. The pyrolysis of conformal MLD films to obtain conductive metal oxide/carbon composite films is presented as a method for enabling non-conductive, but possibly electrochemically active materials, to be used for electrochemical applications.

Nanostructured pseudocapacitive materials decorated 3D graphene foam electrodes for next generation supercapacitors.

PubMed

Patil, Umakant; Lee, Su Chan; Kulkarni, Sachin; Sohn, Ji Soo; Nam, Min Sik; Han, Suhyun; Jun, Seong Chan

2015-04-28

Nowadays, advancement in performance of proficient multifarious electrode materials lies conclusively at the core of research concerning energy storage devices. To accomplish superior capacitance performance the requirements of high capacity, better cyclic stability and good rate capability can be expected from integration of electrochemical double layer capacitor based carbonaceous materials (high power density) and pseudocapacitive based metal hydroxides/oxides or conducting polymers (high energy density). The envisioned three dimensional (3D) graphene foams are predominantly advantageous to extend potential applicability by offering a large active surface area and a highly conductive continuous porous network for fast charge transfer with decoration of nanosized pseudocapacitive materials. In this article, we review the latest methodologies and performance evaluation for several 3D graphene based metal oxides/hydroxides and conducting polymer electrodes with improved electrochemical properties for next-generation supercapacitors. The most recent research advancements of our and other groups in the field of 3D graphene based electrode materials for supercapacitors are discussed. To assess the studied materials fully, a careful interpretation and rigorous scrutiny of their electrochemical characteristics is essential. Auspiciously, both nano-structuration as well as confinement of metal hydroxides/oxides and conducting polymers onto a conducting porous 3D graphene matrix play a great role in improving the performance of electrodes mainly due to: (i) active material access over large surface area with fast charge transportation; (ii) synergetic effect of electric double layer and pseudocapacitive based charge storing.

A dendrite-suppressing composite ion conductor from aramid nanofibres.

PubMed

Tung, Siu-On; Ho, Szushen; Yang, Ming; Zhang, Ruilin; Kotov, Nicholas A

2015-01-27

Dendrite growth threatens the safety of batteries by piercing the ion-transporting separators between the cathode and anode. Finding a dendrite-suppressing material that combines high modulus and high ionic conductance has long been considered a major technological and materials science challenge. Here we demonstrate that these properties can be attained in a composite made from Kevlar-derived aramid nanofibres assembled in a layer-by-layer manner with poly(ethylene oxide). Importantly, the porosity of the membranes is smaller than the growth area of the dendrites so that aramid nanofibres eliminate 'weak links' where the dendrites pierce the membranes. The aramid nanofibre network suppresses poly(ethylene oxide) crystallization detrimental for ion transport, giving a composite that exhibits high modulus, ionic conductivity, flexibility, ion flux rates and thermal stability. Successful suppression of hard copper dendrites by the composite ion conductor at extreme discharge conditions is demonstrated, thereby providing a new approach for the materials engineering of solid ion conductors.

Direct Low-Temperature Growth of Single-Crystalline Anatase TiO2 Nanorod Arrays on Transparent Conducting Oxide Substrates for Use in PbS Quantum-Dot Solar Cells.

PubMed

Chung, Hyun Suk; Han, Gill Sang; Park, So Yeon; Shin, Hee-Won; Ahn, Tae Kyu; Jeong, Sohee; Cho, In Sun; Jung, Hyun Suk

2015-05-20

We report on the direct growth of anatase TiO2 nanorod arrays (A-NRs) on transparent conducting oxide (TCO) substrates that can be directly applied to various photovoltaic devices via a seed layer mediated epitaxial growth using a facile low-temperature hydrothermal method. We found that the crystallinity of the seed layer and the addition of an amine functional group play crucial roles in the A-NR growth process. The A-NRs exhibit a pure anatase phase with a high crystallinity and preferred growth orientation in the [001] direction. Importantly, for depleted heterojunction solar cells (TiO2/PbS), the A-NRs improve both electron transport and injection properties, thereby largely increasing the short-circuit current density and doubling their efficiency compared to TiO2 nanoparticle-based solar cells.

High-temperature oxidation kinetics of sponge-based E110 cladding alloy

DOE PAGES

Yan, Yong; Garrison, Benton E.; Howell, Mike; ...

2017-11-03

Two-sided oxidation experiments were recently conducted at 900°C–1200 °C in flowing steam with samples of sponge-based Zr-1Nb alloy E110. Although the old electrolytic E110 tubing exhibited a high degree of susceptibility to nodular corrosion and experienced breakaway oxidation rates in a relatively short time, the new sponge-based E110 demonstrated steam oxidation behavior comparable to Zircaloy-4. Sample weight gain and oxide layer thickness measurements were performed on oxidized E110 specimens and compared to oxygen pickup and oxide layer thickness calculations using the Cathcart-Pawel correlation. Our study shows that the sponge-based E110 follows the parabolic law at temperatures above 1015 °C. Atmore » or below 1015 °C, the oxidation rate was very low when compared to Zircaloy-4 and can be represented by a cubic expression. No breakaway oxidation was observed at 1000 °C for oxidation times up to 10,000 s. Arrhenius expressions are given to describe the parabolic rate constants at temperatures above 1015 °C and cubic rate constants are provided for temperatures below 1015 °C. The weight gains calculated by our equations are in excellent agreement with the measured sample weight gains at all test temperatures. In addition to the as-fabricated E110 cladding sample, prehydrided E110 cladding with hydrogen concentrations in the 100–150 wppm range was also investigated. The effect of hydrogen content on sponge-based E110 oxidation kinetics was minimal. No significant difference was found between as-fabricated and hydrided samples with regard to oxygen pickup and oxide layer thickness for hydrogen contents below 150 wppm.« less

High-temperature oxidation kinetics of sponge-based E110 cladding alloy

NASA Astrophysics Data System (ADS)

Yan, Yong; Garrison, Benton E.; Howell, Mike; Bell, Gary L.

2018-02-01

Two-sided oxidation experiments were recently conducted at 900°C-1200 °C in flowing steam with samples of sponge-based Zr-1Nb alloy E110. Although the old electrolytic E110 tubing exhibited a high degree of susceptibility to nodular corrosion and experienced breakaway oxidation rates in a relatively short time, the new sponge-based E110 demonstrated steam oxidation behavior comparable to Zircaloy-4. Sample weight gain and oxide layer thickness measurements were performed on oxidized E110 specimens and compared to oxygen pickup and oxide layer thickness calculations using the Cathcart-Pawel correlation. Our study shows that the sponge-based E110 follows the parabolic law at temperatures above 1015 °C. At or below 1015 °C, the oxidation rate was very low when compared to Zircaloy-4 and can be represented by a cubic expression. No breakaway oxidation was observed at 1000 °C for oxidation times up to 10,000 s. Arrhenius expressions are given to describe the parabolic rate constants at temperatures above 1015 °C and cubic rate constants are provided for temperatures below 1015 °C. The weight gains calculated by our equations are in excellent agreement with the measured sample weight gains at all test temperatures. In addition to the as-fabricated E110 cladding sample, prehydrided E110 cladding with hydrogen concentrations in the 100-150 wppm range was also investigated. The effect of hydrogen content on sponge-based E110 oxidation kinetics was minimal. No significant difference was found between as-fabricated and hydrided samples with regard to oxygen pickup and oxide layer thickness for hydrogen contents below 150 wppm.

Nanoscale surface modification of Li-rich layered oxides for high-capacity cathodes in Li-ion batteries

NASA Astrophysics Data System (ADS)

Lan, Xiwei; Xin, Yue; Wang, Libin; Hu, Xianluo

2018-03-01

Li-rich layered oxides (LLOs) have been developed as a high-capacity cathode material for Li-ion batteries, but the structural complexity and unique initial charging behavior lead to several problems including large initial capacity loss, capacity and voltage fading, poor cyclability, and inferior rate capability. Since the surface conditions are critical to electrochemical performance and the drawbacks, nanoscale surface modification for improving LLO's properties is a general strategy. This review mainly summarizes the surface modification of LLOs and classifies them into three types of surface pre-treatment, surface gradient doping, and surface coating. Surface pre-treatment usually introduces removal of Li2O for lower irreversible capacity while surface doping is aimed to stabilize the structure during electrochemical cycling. Surface coating layers with different properties, protective layers to suppress the interface side reaction, coating layers related to structural transformation, and electronic/ionic conductive layers for better rate capability, can avoid the shortcomings of LLOs. In addition to surface modification for performance enhancement, other strategies can also be investigated to achieve high-performance LLO-based cathode materials.

Tensile properties of V-5Cr-5Ti alloy after exposure in air environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Natesan, K.; Soppet, W.K.

1997-04-01

Oxidation studies were conducted on V-5Cr-5Ti alloy specimens in an air environment to evaluate the oxygen uptake behavior of the alloy as a function of temperature and exposure time. The oxidation rates, calculated from parabolic kinetic measurements of thermogravimetric testing and confirmed by microscopic analysis of cross sections of exposed specimens, were 5, 17, and 27 {mu}m per year after exposure at 300, 400, and 500{degrees}C, respectively. Uniaxial tensile tests were conducted at room temperature and at 500{degrees}C on preoxidized specimens of the alloy to examine the effects of oxidation and oxygen migration on tensile strength and ductility. Correlations weremore » developed between tensile strength and ductility of the oxidized alloy and microstructural characteristics such as oxide thickness, depth of hardened layer, depth of intergranular fracture zone, and transverse crack length.« less

Simulation of reduction of iron-oxide-carbon composite pellets in a rotary hearth furnace

NASA Astrophysics Data System (ADS)

Halder, Sabuj

The primary motivation of this work is to evaluate a new alternative ironmaking process which involves the combination of a Rotary Hearth Furnace (RHF) with an iron bath smelter. This work is concerned primarily, with the productivity of the RHF. It is known that the reduction in the RHF is controlled by chemical kinetics of the carbon oxidation and wustite reduction reactions as well as by heat transfer to the pellet surface and within the pellet. It is heat transfer to the pellet which limits the number of layers of pellets in the pellet bed in the RHF and thus, the overall productivity. Different types of carbon like graphite, coal-char and wood charcoal were examined. Part of the research was to investigate the chemical kinetics by de-coupling it from the influence of heat and mass transfer. This was accomplished by carrying out reduction experiments using small iron-oxide-carbon powder composite mixtures. The reaction rate constants were determined by fitting the experimental mass loss with a mixed reaction model. This model accounts for the carbon oxidation by CO2 and wustite reduction by CO, which are the primary rate controlling surface-chemical reactions in the composite system. The reaction rate constants have been obtained using wustite-coal-char powder mixtures and wustite-wood-charcoal mixtures. The wustite for these mixtures was obtained from two iron-oxide sources: artificial porous analytical hematite (PAH) and hematite ore tailings. In the next phase of this study, larger scale experiments were conducted in a RHF simulator using spherical composite pellets. Measurement of the reaction rates was accomplished using off-gas analysis. Different combinations of raw materials for the pellets were investigated. These included artificial ferric oxide as well as naturally existing hematite and taconite ores. Graphite, coal-char and wood-charcoal were the reductants. Experiments were conducted using a single layer, a double layer and a triple layer of composite pellets to look into the different aspects associated with multi-layer reduction in the RHF. The reduced pellets were examined for morphology and phase distribution using Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray (EDX) analysis. Efforts were made to interpret the differences in the observed rates from one kind of pellet to the other on the grounds of chemical kinetics of the carbon oxidation and wustite reduction reactions and the issues of external and internal heat transport to and within the pellets. It was concluded from the experiments that in the ore containing pellets, wood-charcoal appeared to be a faster reductant than coal-char. However, in the PAH containing pellets, the reverse was found to be true. This is because of the internal heat transport limitations imposed by two factors (a) lower thermal conductivity of wood-charcoal in comparison to coal-char and (b) swelling of the PAH-Wood-Charcoal pellets during the initial heat-up stage. For the same type of reductant, hematite containing pellets were observed to reduce faster than taconite containing pellets. This is in accordance with the higher reducibility of hematite because of development of internal porosity due to cracking and fissure formation during the Fe2O3 to Fe 3O4 transformation stage. This is however, absent during the reduction of taconite, which is primarily Fe3O4. The PAH-Wood-Charcoal pellets were found to undergo significant amounts of swelling under low temperature conditions. This behavior of the PAH-Wood-Charcoal pellets of a certain layer impeded the external heat transport to the lower layer and consequently, resulted in a relatively lower reduction rate for a multi-layer bed. The volume change phenomena associated with the reduction of composites were also studied. Volume changes influence the external heat transport, especially to the lower layers of a multi-layer bed. The volume change of the different kinds of composite pellets was studied as a function of reduction temperature and time. Empirical correlations were developed associating the volume shrinkage to the fractional mass loss of the pellets. The estimation of the change in the amount of external heat transport with varying pellet sizes for a particular layer of a multi-layer bed was obtained by conducting heat transport tests using inert low carbon steel spheres. The experimental temperature data for the spheres of different layers was interpreted using a simple mathematical model. It was found through this exercise, that if the spheres of the top layer of the bed shrink by 30%, the external heat transfer to the second layer increases by almost 6 times. This is because of the decrease in the shielded area of the second layer due to the decreasing size of the top layer spheres. If the average degree of reduction targeted in a RHF is reduced from 95% to about 70% by coupling the RHF with a bath smelter, the productivity of the RHF can be enhanced by 1.5 to 2 times. The use of a 2 or 3 layer bed was found to be far superior to that of a single layer for higher productivities under the current experimental conditions. Sometimes, a 2 layer bed is more advantageous than a 3 layer bed, as was found to be the case with hematite-wood-charcoal pellets. The choice of the optimal number of layers depends upon several factors like pellet size, kind of pellet and shrinking characteristics of the pellet.

Hydrophilicity Reinforced Adhesion of Anodic Alumina Oxide Template Films to Conducting Substrates for Facile Fabrication of Highly Ordered Nanorod Arrays.

PubMed

Wang, Chuanju; Wang, Guiqiang; Yang, Rui; Sun, Xiangyu; Ma, Hui; Sun, Shuqing

2017-01-17

Arrays of ordered nanorods are of special interest in many fields. However, it remains challenging to obtain such arrays on conducting substrates in a facile manner. In this article, we report the fabrication of highly ordered and vertically standing nanorod arrays of both metals and semiconductors on Au films and indium tin oxide glass substrates without an additional layering. In this approach, following the simple hydrophilic treatment of an anodic aluminum oxide (AAO) membrane and conducting substrates, the AAO membrane was transferred onto the modified substrates with excellent adhesion. Subsequently, nanorod arrays of various materials were electrodeposited on the conducting substrates directly. This method avoids any expensive and tedious lithographic and ion milling process, which provides a simple yet robust route to the fabrication of arrays of 1D materials with high aspect ratio on conducting substrates, which shall pave the way for many practical applications in a range of fields.

Delay in micro-discharges appearance during PEO of Al: Evidence of a mechanism of charge accumulation at the electrolyte/oxide interface

NASA Astrophysics Data System (ADS)

Martin, J.; Nominé, A.; Brochard, F.; Briançon, J.-L.; Noël, C.; Belmonte, T.; Czerwiec, T.; Henrion, G.

2017-07-01

PEO was conducted on Al by applying a pulsed bipolar current. The role of the cathodic polarization on the appearance of micro-discharges (MDs) and on the subsequent formation of the PEO oxide layers is investigated. Various ratios of the charge quantity RCQ = Qp/Qn (defined as the anodic Qp to cathodic Qn charge quantity ratio over one current pulse period) in the range [0.5; 6.0] were selected by changing the waveform parameters of the cathodic current while keeping the waveform of the anodic current unchanged. Results show that the appearance of MDs is delayed with respect to the rising edge of the anodic current; this delay strongly depends on both the processing time and the applied cathodic charge quantity. It is also evidenced that shorter delays promoted by high RCQ values (RCQ > 1) are associated with stronger MDs (large size and long life) that have detrimental effects on the formed PEO oxide layers. Thicker and the more compact oxide layer morphology is achieved with the intermediate RCQ value (RCQ = 0.9) for which the delay of the MDs appearance is high and the MDs softer. Low RCQ (RCQ < 0.9) results in an earlier extinction of the MDs as the process goes on, which leads to poorly oxidized metal. A mechanism of charge accumulation taking place at the oxide/electrolyte interface and arising before the occurrence of dielectric breakdown is proposed to explain the ignition of MDs during pulsed bipolar PEO of aluminium. A close examination of the voltage-time response which can be adequately simulated with an equivalent RC circuit evidences the capacitive behaviour of the oxide layer and therefore confirms this proposed mechanism of charge accumulation.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by thermionic vacuum arc (TVA) method

NASA Astrophysics Data System (ADS)

Ciupinǎ, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Vladoiu, Rodica; Mandes, Aurelia; Dinca, Virginia; Nicolescu, Virginia; Manu, Radu; Dinca, Paul; Zaharia, Agripina

2018-02-01

To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV. The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. The retention of oxygen in the protective layer of N-Si-C is due to the following phenomena: (a) The reaction between oxygen and silicon carbide resulting in silicon oxide and carbon dioxide; (b) The reaction involving oxygen, nitrogen and silicon resulting silicon oxinitride with a variable composition; (c) Nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

PubMed

Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

2017-03-29

A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

PubMed

Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

2018-04-04

Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

Dual functional reduced graphene oxide as photoanode and counter electrode in dye-sensitized solar cells and its exceptional efficiency enhancement

NASA Astrophysics Data System (ADS)

Jumeri, F. A.; Lim, H. N.; Zainal, Z.; Huang, N. M.; Pandikumar, A.; Lim, S. P.

2015-10-01

The dual functionalities of reduced graphene oxide (rGO) as photoanode and counter electrode in dye-sensitized solar cells (DSSCs) is explored. A titanium dioxide (TiO2) film is deposited on an indium tin oxide (ITO) glass using an in-house aerosol-assisted chemical vapor deposition method. Graphene oxide (GO) is then introduced onto the TiO2-ITO substrate, and the GO layer is successively thermally treated to rGO. The TiO2-rGO film is used as a compact layer for the photoanode of the DSSC. A layer of zinc oxide-silver (ZnO-Ag) is introduced on top of the compact layer as an active material. Its highly porous flower-shaped morphology is advantageous for the adsorption of dye. The in-situ electrochemical polymerization method used for the fabrication of polypyrrole incorporated with rGO and p-toluenesulfonate (pTS) (Ppy-rGO-pTS) on an ITO glass is used as a counter electrode for the DSSC. The DSSC assembled with the Ppy-rGO-1.0pTS counter electrode exhibites an enhanced conversion efficiency of 1.99% under solar illumination, which is better than that using conventional Pt as a counter electrode (0.08%). This is attributed to the increased contact area between the Ppy-rGO-pTS counter electrode and electrolyte, which subsequently improves the conductivity and high electrocatalytic activities of the Ppy-rGO-pTS counter electrode.

A general strategy toward graphitized carbon coating on iron oxides as advanced anodes for lithium-ion batteries.

PubMed

Ding, Chunyan; Zhou, Weiwei; Wang, Bin; Li, Xin; Wang, Dong; Zhang, Yong; Wen, Guangwu

2017-08-25

Integration of carbon materials with benign iron oxides is blazing a trail in constructing high-performance anodes for lithium-ion batteries (LIBs). In this paper, a unique general, simple, and controllable strategy is developed toward in situ uniform coating of iron oxide nanostructures with graphitized carbon (GrC) layers. The basic synthetic procedure only involves a simple dip-coating process for the loading of Ni-containing seeds and a subsequent Ni-catalyzed chemical vapor deposition (CVD) process for the growth of GrC layers. More importantly, the CVD treatment is conducted at a quite low temperature (450 °C) and with extremely facile liquid carbon sources consisting of ethylene glycol (EG) and ethanol (EA). The GrC content of the resulting hybrids can be controllably regulated by altering the amount of carbon sources. The electrochemical results reveal remarkable performance enhancements of iron oxide@GrC hybrids compared with pristine iron oxides in terms of high specific capacity, excellent rate and cycling performance. This can be attributed to the network-like GrC coating, which can improve not only the electronic conductivity but also the structural integrity of iron oxides. Moreover, the lithium storage performance of samples with different GrC contents is measured, manifesting that optimized electrochemical property can be achieved with appropriate carbon content. Additionally, the superiority of GrC coating is demonstrated by the advanced performance of iron oxide@GrC compared with its corresponding counterpart, i.e., iron oxides with amorphous carbon (AmC) coating. All these results indicate the as-proposed protocol of GrC coating may pave the way for iron oxides to be promising anodes for LIBs.

Far Infrared and Electrical Transport Studies of Oxide - Charge - Induced Localized States in a Model Two-Dimensional System.

NASA Astrophysics Data System (ADS)

Glaser, Evan R.

Far-infrared measurements of intersubband absorption spectra and dc electrical transport studies of n-inversion layers in (100) Si. Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) with mobile positive ions in the oxide are performed at temperatures between 1.7 and 80K. The results provide evidence for the existence of impurity bands and for screening of these localized states in this quasi two-dimensional electronic system. The properties of the elec- tronic states in the sub-micron (<10('-6)m) conducting layer of the MOS devices are probed in detail by conductance, capacitance and trans- conductance measurements and by optical absorption measure- ments with the aid of a Far-Infrared Fourier Transform Spectrometer. Data are obtained with positive oxide charge density as a parameter, varied by the drifting at room temperature of controlled amounts of. positive ions ((DELTA)N(,ox)) to the oxide-semiconductor interface (1.3 x 10('11) (LESSTHEQ) (DELTA)N(,ox) (LESSTHEQ) 7.0 x 10('11) cm('-2)) in the presence of positive gate voltages. (3-7V). In addition, high mobility devices in which no positive impurity ions had been purposely introduced are investigated to provide a basis for comparison with the corresponding results from poor mobil- ity devices. Studies are carried out for a wide range of net interfacial. oxide charge densities (2 x 10('10) cm('-2) (LESSTHEQ) N(,ox) (LESSTHEQ) 1 x 10('12) cm('-2)), and substrate source bias voltages (-9V (LESSTHEQ) V(,S) (LESSTHEQ) 1V) with the goal of. attaining a better understanding of the nature of localization effects (e.g., two-dimensional carrier localization), interface scattering, and many-body Coulombic interactions (e.g., screening effects) in these structures. The present measurements provide evidence for the existence of impurity bands and long band tails at low electron densities (n(,s) (LESSTHEQ) N(,ox)) associated with subbands due to both the inequivalent conduction-band valleys and for screening of these. localized states at high electron densities (n(,s) >(, )N(,ox)). In addition, at high inversion layer electron densities the intersubband resonance linewidths at 4.2K as a function of positive oxide charge density are found to be correlated with the corresponding scattering rates determined from the low temperature effective mobilities. The results of these studies are compared with recent experimental investigations of this and similar systems and with predictions of available theoretical models.

Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kannan Selvaraj, Sathees; Feinerman, Alan; Takoudis, Christos G., E-mail: takoudis@uic.edu

In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1 ± 0.01 nm/cycle within the wide ALD temperature window of 175–300 °C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure,more » refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3 Ω cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.« less

In-plane conductance of thin films as a probe of surface chemical environment: Adsorbate effects on film electronic properties of indium tin oxide and gold

NASA Astrophysics Data System (ADS)

Swint, Amy Lynn

Changes in the in-plane conductance of conductive thin films are observed as a result of chemical adsorption at the surface. Reaction of the indium tin oxide (ITO) surface with Bronsted acids (bases) leads to increases (decreases) in its in-plane conductance as measured by a four-point probe configuration. The conductance varies monotonically with pH suggesting that the degree of surface protonation or hydroxylation controls the surface charge density, which in turn affects the width of the n-type depletion layer, and ultimately the in-plane conductance. Measurements at constant pH with a series of tetraalkylammonium hydroxide species of varying cation size indicate that surface dipoles also affect ITO conductance by modulating the magnitude of the surface polarization. Modulating the double layer with varying aqueous salt solutions also affects ITO conductance, though not to the same degree as strong Bronsted acids and bases. Solvents of varying dielectric constant and proton donating ability (ethanol, dimethylformamide) decrease ITO conductance relative to H2O. In addition, changing solvent gives rise to thermally-derived conductance transients, which result from exothermic solvent mixing. The self-assembly of alkanethiols at the surface increases the conductance of ITO films, most likely through carrier population effects. In all cases examined the combined effects of surface charge, adsorbed dipole layer magnitude and carrier injection are responsible for altering the ITO conductance. Besides being directly applicable to the control of electronic properties, these results also point to the use of four-point probe resistance measurements in condensed phase sensing applications. Ultrasensitive conductance-based gas phase sensing of organothiol adsorption to gold nanowires is accomplished with a limit of detection in the 105 molecule range. Further refinement of the inherently low noise resistance measurement may lead to observation of single adsorption events at the gold surface.

Novel neural interface for implant electrodes: improving electroactivity of polypyrrole through MWNT incorporation.

PubMed

Green, R A; Williams, C M; Lovell, N H; Poole-Warren, L A

2008-04-01

Multi-walled carbon nanotubes (MWNTs) can be incorporated into conductive polymers to produce superior materials for neural interfaces with high interfacial areas, conductivity and electrochemical stability. This paper explores the addition of MWNTs to polypyrrole (PPy) through two methods, layering and codeposition. Conductivity of PPy doped with polystyrene sulfonate (PSS), a commonly used dopant, was improved by 50% when MWNTs were layered with PPy/PSS. The film electrochemical stability was improved from 38% activity to 66% activity after 400 cycles of oxidation and reduction. Growth inhibition assays indicated that MWNTs are not growth inhibitory. The electroactive polymer-MWNT composites produced demonstrate properties that suggest they are promising candidates for biomedical electrode coatings.

Structure for HTS composite conductors and the manufacture of same

DOEpatents

Cotton, J.D.; Riley, G.N. Jr.

1999-06-01

A superconducting oxide composite structure including a superconducting oxide member, a metal layer surrounding the superconducting oxide member, and an insulating layer of a complex oxide formed in situ adjacent to the superconducting oxide member and the metal layer is provided together with a method of forming such a superconducting oxide composite structure including encapsulating a superconducting oxide member or precursor within a metal matrix layer from the group of: (1) a reactive metal sheath adjacent to the superconducting oxide member or precursor, the reactive metal sheath surrounded by a second metal layer or (2) an alloy containing a reactive metal; to form an intermediate product, and, heating the intermediate product at temperatures and for time sufficient to form an insulating layer of a complex oxide in situ, the insulating layer to the superconducting oxide member or precursor and the metal matrix layer. 10 figs.

Structure for hts composite conductors and the manufacture of same

DOEpatents

Cotton, James D.; Riley, Jr., Gilbert Neal

1999-01-01

A superconducting oxide composite structure including a superconducting oxide member, a metal layer surrounding the superconducting oxide member, and an insulating layer of a complex oxide formed in situ adjacent to the superconducting oxide member and the metal layer is provided together with a method of forming such a superconducting oxide composite structure including encapsulating a superconducting oxide member or precursor within a metal matrix layer from the group of: (i) a reactive metal sheath adjacent to the superconducting oxide member or precursor, the reactive metal sheath surrounded by a second metal layer or (ii) an alloy containing a reactive metal; to form an intermediate product, and, heating the intermediate product at temperatures and for time sufficient to form an insulating layer of a complex oxide in situ, the insulating layer to the superconducting oxide member or precursor and the metal matrix layer.

High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

PubMed

Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

2015-01-27

An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Some metal oxides and their applications for creation of Microsystems (MEMS) and Energy Harvesting Devices (EHD)

NASA Astrophysics Data System (ADS)

Denishev, K.

2016-10-01

This is a review of a part of the work of the Technological Design Group at Technical University of Sofia, Faculty of Electronic Engineering and Technologies, Department of Microelectronics. It is dealing with piezoelectric polymer materials and their application in different microsystems (MEMS) and Energy Harvesting Devices (EHD), some organic materials and their applications in organic (OLED) displays, some transparent conductive materials etc. The metal oxides Lead Zirconium Titanate (PZT) and Zinc Oxide (ZnO) are used as piezoelectric layers - driving part of different sensors, actuators and EHD. These materials are studied in term of their performance in dependence on the deposition conditions and parameters. They were deposited as thin films by using RF Sputtering System. As technological substrates, glass plates and Polyethylenetherephtalate (PET) foils were used. For characterization of the materials, a test structure, based on Surface Acoustic Waves (SAW), was designed and prepared. The layers were characterized by Fourier Transform Infrared spectroscopy (FTIR). The piezoelectric response was tested at variety of mechanical loads (tensile strain, stress) in static and dynamic (multiple bending) mode. The single-layered and double-layered structures were prepared for piezoelectric efficiency increase. A structure of piezoelectric energy transformer is proposed and investigated.

Plastic-bonded electrodes for nickel-cadmium accumulators. IV - Some specific problems of the positive active layer

NASA Astrophysics Data System (ADS)

Micka, K.; Mrha, J.; Klapste, B.

1980-06-01

The active layer of plastic-bonded nickel oxide electrodes undergoes expansion during discharging and contraction during charging; the latter however does not fully compensate for the expansion. These volume changes can be made reversible by the action of an external pressure. The electro-chemical behavior of the conductive components, carbon black and graphite, shows more or less severe corrosion during anodic current loading.

The effect of doping (Mn,B)3O4 materials as protective layers in different metallic interconnects for Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Miguel-Pérez, Verónica; Martínez-Amesti, Ana; Nó, María Luisa; Larrañaga, Aitor; Arriortua, María Isabel

2013-12-01

Spinel oxides with the general formula of (Mn,B)3O4 (B = Co, Fe) were used as barrier materials between the cathode and the metallic interconnect to reduce the rate of cathode degradation by Cr poisoning. The effect of doping at the B position was investigated terms of microstructure and electrical conductivity to determine its behaviour and effectiveness as a protective layer in contact with three metallic materials (Crofer 22 APU, SS430 and Conicro 4023 W 188). The analysis showed that the use of these materials considerably decreased the reactivity and diffusion of Cr between the cathode and the metallic interconnects. The protective layer doped with Fe at the B position exhibited the least amount of reactivity with the interconnector and cathode materials. The worst results were observed for SS430 cells coated with a protective layer perhaps due to their low Cr content. The Crofer 22 APU and Conicro 4023 W 188 samples exhibited very similar conductivity results in the presence of the MnCo1.9Fe0.1O4 protective coating. As a result, these two material combinations are a promising option for use as bipolar plates in SOFC.

Structural properties of zirconia - in-situ high temperature XRD characterization

NASA Astrophysics Data System (ADS)

Kurpaska, Lukasz

2018-07-01

In this work, the effect of high temperature on structural properties of pure zirconium have been investigated. In-situ X-ray diffraction analysis of the oxide layer formed at temperature window 25-600 °C on pure zirconium were performed. Conducted experiment aimed at investigation of the zirconia phases developed on surface of the metallic substrate. Based on the conducted studies, possible stress state (during heating, continuous oxidation and cooling), cell parameters and HWHM factor were analyzed. A tetragonal and monoclinic phases peak shifts and intensities change were observed, suggesting that different phases react in different way upon temperature effect.

Modification of Magnetic Nanocontact Structure by a Bias-Voltage-Induced Stress and Its Influence on Magnetoresistance Effect in TaOx Nano-Oxide Layer Spin Valve

NASA Astrophysics Data System (ADS)

Miyake, Kousaku; Saki, Yosinobu; Suzuki, Ayako; Kawasaki, Shohei; Doi, Masaaki; Sahashi, Masashi

2012-06-01

A magnetic nanocontact spin valve (NCSV) was fabricated by inserting a TaOx nano-oxide layer (NOL) as the spacer layer. Current-perpendicular-to-film-plane (CPP) measurements revealed that the SV had a positive magnetoresistance (MR) ratio. When a high bias voltage was applied to the SV, the fine structure of the NOL changed i.e., the resistance and MR ratio of the device changed irreversibly. The change in device characteristics is attributed to a proportional change in the number of nonmagnetoresistive and magnetoresistive conductive channels in the SV upon high bias voltage application. The decrease in MR ratio accompanied the disappearance of the magnetic nanocontact, suggesting that the positive MR effect was partially due to the presence of magnetic nanocontacts.

Electronic structure, magnetism and thermoelectricity in layered perovskites: Sr2SnMnO6 and Sr2SnFeO6

NASA Astrophysics Data System (ADS)

Khandy, Shakeel Ahmad; Gupta, Dinesh C.

2017-11-01

Layered structures especially perovskites have titanic potential for novel device applications and thanks to the multifunctional properties displayed in these materials. We forecast and justify the robust spin-polarized ferromagnetism in half-metallic Sr2SnFeO6 and semiconducting Sr2SnMnO6 perovskite oxides. Different approximation methods have been argued to put forward their physical properties. The intriguingly intricate electronic band structures favor the application of these materials in spintronics. The transport parameters like Seebeck coefficient, electrical and thermal conductivity, have been put together to establish their thermoelectric response. Finally, the layered oxides are found to switch their application as thermoelectric materials and hence, these concepts design the principles of the technologically desired thermoelectric and spin based devices.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cerbu, F.; Madia, O.; Afanas'ev, V. V.

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behaviormore » of HfO{sub 2}, suggesting that alternative defect models should be considered.« less

Tuning the Seebeck effect in C60-based hybrid thermoelectric devices through temperature-dependent surface polarization and thermally-modulated interface dipoles.

PubMed

Liu, Yuchun; Xu, Ling; Zhao, Chen; Shao, Ming; Hu, Bin

2017-06-07

Fullerene (C 60 ) is an important n-type organic semiconductor with high electron mobility and low thermal conductivity. In this work, we report the experimental results on the tunable Seebeck effect of C 60 hybrid thin-film devices by adopting different oxide layers. After inserting n-type high-dielectric constant titanium oxide (TiO x ) and zinc oxide (ZnO) layers, we observed a significantly enhanced n-type Seebeck effect in oxide/C 60 hybrid devices with Seebeck coefficients of -5.8 mV K -1 for TiO x /C 60 and -2.08 mV K -1 for ZnO/C 60 devices at 100 °C, compared with the value of -400 μV K -1 for the pristine C 60 device. However, when a p-type nickel oxide (NiO) layer is inserted, the C 60 hybrid devices show a p-type to n-type Seebeck effect transition when the temperature increases. The remarkable Seebeck effect and change in Seebeck coefficient in different oxide/C 60 hybrid devices can be attributed to two reasons: the temperature-dependent surface polarization difference and thermally-dependent interface dipoles. Firstly, the surface polarization difference due to temperature-dependent electron-phonon coupling can be enhanced by inserting an oxide layer and functions as an additional driving force for the Seebeck effect development. Secondly, thermally-dependent interface dipoles formed at the electrode/oxide interface play an important role in modifying the density of interface states and affecting the charge diffusion in hybrid devices. The surface polarization difference and interface dipoles function in the same direction in hybrid devices with TiO x and ZnO dielectric layers, leading to enhanced n-type Seebeck effect, while the surface polarization difference and interface dipoles generate the opposite impact on electron diffusion in ITO/NiO/C 60 /Al, leading to a p-type to n-type transition in the Seebeck effect. Therefore, inserting different oxide layers could effectively modulate the Seebeck effect of C 60 -based hybrid devices through the surface polarization difference and thermally-dependent interface dipoles, which represents an effective approach to tune the vertical Seebeck effect in organic functional devices.

The Dye Sensitized Photoelectrosynthesis Cell (DSPEC) for Solar Water Splitting and CO2 Reduction

NASA Astrophysics Data System (ADS)

Meyer, Thomas; Alibabaei, Leila; Sherman, Benjamin; Sheridan, Matthew; Ashford, Dennis; Lapides, Alex; Brennaman, Kyle; Nayak, Animesh; Roy, Subhangi; Wee, Kyung-Ryang; Gish, Melissa; Meyer, Jerry; Papanikolas, John

The dye-sensitized photoelectrosynthesis cell (DSPEC) integrates molecular level light absorption and catalysis with the bandgap properties of stable oxide materials such as TiO2 and NiO. Excitation of surface-bound chromophores leads to excited state formation and rapid electron or hole injection into the conduction or valence bands of n or p-type oxides. Addition of thin layers of TiO2 or NiO on the surfaces of mesoscopic, nanoparticle films of semiconductor or transparent conducting oxides to give core/shell structures provides a basis for accumulating multiple redox equivalents at catalysts for water oxidation or CO2 reduction. UNC EFRC Center for Solar Fuels, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001011.

Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

NASA Astrophysics Data System (ADS)

Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

2017-07-01

The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition

NASA Astrophysics Data System (ADS)

D'Arcy, Julio M.; Tran, Henry D.; Stieg, Adam Z.; Gimzewski, James K.; Kaner, Richard B.

2012-05-01

A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated. Electronic supplementary information (ESI) available: Droplet coalescence, catenoid formation, mechanism of film growth, scanning electron micrographs showing carbon nanotube alignment, flexible transparent films of SWCNTs, AFM images of a chemically converted graphene film, and SEM images of SWCNT free-standing thin films. See DOI: 10.1039/c2nr00010e

Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer

PubMed Central

Kim, Jeongmo; Mat Teridi, Mohd Asri; Mohd Yusoff, Abd. Rashid bin; Jang, Jin

2016-01-01

Perovskite solar cells are becoming one of the leading technologies to reduce our dependency on traditional power sources. However, the frequently used component poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has several shortcomings, such as an easily corroded indium-tin-oxide (ITO) interface at elevated temperatures and induced electrical inhomogeneity. Herein, we propose solution-processed nitrogen-doped graphene oxide nanoribbons (NGONRs) as a hole transport layer (HTL) in perovskite solar cells, replacing the conducting polymer PEDOT:PSS. The conversion efficiency of NGONR-based perovskite solar cells has outperformed a control device constructed using PEDOT:PSS. Moreover, our proposed NGONR-based devices also demonstrate a negligible current hysteresis along with improved stability. This work provides an effective route for substituting PEDOT:PSS as the effective HTL. PMID:27277388

Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory

NASA Astrophysics Data System (ADS)

Gao, Dan; Liu, Bo; Xu, Zhen; Wang, Heng; Xia, Yangyang; Wang, Lei; Zhu, Nanfei; Li, Ying; Zhan, Yipeng; Song, Zhitang; Feng, Songlin

2016-10-01

The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in order to investigate the effect of high aspect ratio process (HARP) SiO2 on the performance of TiN, both TiN/SiO2, TiN/SiN thin films and TiN BEC device structures are analyzed. By combining transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), we found that the TiN would be oxidized after the deposition of HARP SiO2 and there exist a thin ( 4 nm) oxidation interfacial layer between TiN and SiO2. Electrical measurements were performed on the 1R PCM test-key die with 7 nm and 10 nm BEC-only cells. The statistical initial resistances of BEC have wide distribution and it is confirmed that the non-uniform oxidation of TiN BEC affects the astringency of the resistance of TiN BEC. The experimental results help to optimize the process of TiN BEC, and SiN is recommended as a better choice as the linear layer.

Spin-filter spin valves with nano-oxide layers for high density recording heads

NASA Astrophysics Data System (ADS)

Al-Jibouri, Abdul; Hoban, M.; Lu, Z.; Pan, G.

2002-05-01

A new spin-filter spin valve with nano-oxide specular layers with structure of Ta/NiFe/IrMn/CoFe/NOL1/CoFe/Cu/CoFetfl/CutCu/NOL2/Ta was deposited using a Nordiko 9606 physical vapor deposition system. The data clearly show that the magnetoresistive (MR) ratio has been significantly improved for spin valves with thinner free layers. The MR ratio remains larger than 12% even when the CoFe free layer is as thin as 1 nm. An optimized MR ratio of ˜15% was obtained when tfl was about 1.2 nm and tCu about 1.5 nm, and was a result of the balance between the increase in the electron mean free path difference and current shunting through the conducting layer. It is also found that the Cu enhancing layer can improve soft magnetic properties of the CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibited coercivity of ˜3 Oe after annealing in a static magnetic field. This kind of spin valve with a very thin soft CoFe free layer is particularly attractive for ultra high density read head applications.

Oxide Thermoelectric Materials: A Structure-Property Relationship

NASA Astrophysics Data System (ADS)

Nag, Abanti; Shubha, V.

2014-04-01

Recent demand for thermoelectric materials for power harvesting from automobile and industrial waste heat requires oxide materials because of their potential advantages over intermetallic alloys in terms of chemical and thermal stability at high temperatures. Achievement of thermoelectric figure of merit equivalent to unity ( ZT ≈ 1) for transition-metal oxides necessitates a second look at the fundamental theory on the basis of the structure-property relationship giving rise to electron correlation accompanied by spin fluctuation. Promising transition-metal oxides based on wide-bandgap semiconductors, perovskite and layered oxides have been studied as potential candidate n- and p-type materials. This paper reviews the correlation between the crystal structure and thermoelectric properties of transition-metal oxides. The crystal-site-dependent electronic configuration and spin degeneracy to control the thermopower and electron-phonon interaction leading to polaron hopping to control electrical conductivity is discussed. Crystal structure tailoring leading to phonon scattering at interfaces and nanograin domains to achieve low thermal conductivity is also highlighted.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-06-29

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

Lead zirconate titanate-nickel zink ferrite thick-film composites: obtaining by the screen printing technique and magnetoelectric properties

NASA Astrophysics Data System (ADS)

Bush, A. A.; Shkuratov, V. Ya.; Chernykh, I. A.; Fetisov, Y. K.

2010-03-01

Layered thick-film composites containing one lead zirconate titanate (PZT) layer, one nickel zinc ferrite (NZF) layer, two PZT-NZF layers, or three PZT-NZF-PZT layers each 40-50 μm thick are prepared. The layers are applied by screen printing on a ceramic aluminum oxide substrate with a preformed contact (conducting) layer. The dielectric properties of the composites are studied in the temperature interval 80-900 K and the frequency interval 25 Hz-1 MHz. Polarized samples exhibit piezoelectric, pyroelectric, and magnetoelectric effects. In tangentially magnetized two- and three-layer composites, the magnetoelectric conversion factor equals 57 kV/(m T) at low frequencies and reaches 2000 kV/(m T) at the mechanical resonance frequency.

In situ X-ray diffraction contribution to the study of reactive element oxide coating effect on the high temperature oxidation behaviour of FeCrAl alloys

NASA Astrophysics Data System (ADS)

Cueff, R.; Buscail, H.; Caudron, E.; Riffard, F.; Issartel, C.; Perrier, S.; El Messki, S.

2004-11-01

The influence of yttrium oxide coating (processed by sol-gel method) on the oxidation behaviour of a commercial FeCrAl alloy (Kanthal A1) has been investigated during isothermal exposures in air at 1373K. The scale growth kinetic of the uncoated alloy obeys a parabolic rate law during the whole oxidation test whereas the kinetic curve of the Y-coated specimen exhibits an initial transient stage during the first hours, followed by a parabolic regime. The yttrium sol-gel coating deposited on the bare alloy does not conduct to the beneficial effect usually ascribed to the reactive elements. No oxidation rate improvement of the coated alloy is observed, the parabolic rate constants values are strictly identical for the both specimens. In situ X-ray diffraction reveals a marked influence of the reactive element on the composition of the oxide scale. The oxide layer formed on the yttrium-coated specimen revealed, in addition to α-alumina which is the main oxide also identified on the bare specimen, the presence of yttrium aluminates (YAlO{3}, Y{3}Al{5}O{12}) located in the outermost part of the layer.

Semipolar III-nitride laser diodes with zinc oxide cladding.

PubMed

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

Low resistance AL2O3 magnetic tunnel junctions optimized through in situ conductance measurements

NASA Astrophysics Data System (ADS)

Wolfman, J.; Mauri, D.; Lin, T.; Yang, J.; Chen, T.

2005-06-01

In situ electrical conductance is used to monitor the growth and natural oxidation of aluminum on top of a CoFe electrode. Light oxidation is found to enhance the electron specular scattering of the CoFe/vacuum interface. Aluminum deposited onto CoFe intermixes to a depth of a few atomic layers, however, subsequent natural oxidation tends to reverse this interdiffusion through oxygen-driven A1 segregation. At the right A1 thickness, natural oxidation creates a clean and specular CoFe /AlOx interface very similar to the best achievable CoFe/vacuum interface. For thicker A1, natural oxidation leaves behind underoxidized AlOx and most importantly an interdiffused CoFe /Al interface. Using 2Torr×150-s natural oxidation, we have fabricated magnetic tunnel junctions (MTJs) with a peak tunnel magnetoresistance (TMR) of 18% for a resistance area product of 7Ωμm2, at the A1 metal thickness of 6 Å. With the same oxidation process TMR drops to only 8% when A1 is increased to 9 Å. Contrary to the accepted view, we do not attribute this TMR drop to A1 underoxidation, but primarily to the interdiffusion at the CoFe /Al interface. This assertion is strongly supported by a second set of MTJs differing only by the insertion of a nano-oxide layer (NOL) on top of CoFe. In this case when Al is increased from 6 to 9 Å, the TMR does not drop but increases from 16% to 27%. This is significant because NOL is found to effectively prevent Al diffusion into CoFe. NOL is also found to act as a reservoir of oxygen, which is subsequently consumed by Al.

Materials characterization study of conductive flexible second surface mirrors

NASA Technical Reports Server (NTRS)

Levadou, F.; Bosma, S. J.; Paillous, A.

1981-01-01

The status of prequalification and qualification work on conductive flexible second surface mirrors is described. The basic material is FEP Teflon witn either aluminium or silver vacuum deposited reflectors. The top layer has been made conductive by deposition of layer of a indium oxide. The results of a prequalification program comprised of decontamination, humidity, thermal cycling, thermal shock and vibration tests are presented. Thermo-optical and electrical properties. The results of a prequalification program comprised of decontamination, humidity, thermal cycling, thermal shock and vibration tests are presented. Thermo-optical and electrical properties, the electrostatic behavior of the materials under simulated substorm environment and electrical conductivity at low temperatures are characterized. The effects of simulated ultra violet and particles irradiation on electrical and thermo-optical properties of the materials are also presented.

Metal oxide induced charge transfer doping and band alignment of graphene electrodes for efficient organic light emitting diodes.

PubMed

Meyer, Jens; Kidambi, Piran R; Bayer, Bernhard C; Weijtens, Christ; Kuhn, Anton; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Robertson, John; Hofmann, Stephan

2014-06-20

The interface structure of graphene with thermally evaporated metal oxide layers, in particular molybdenum trioxide (MoO3), is studied combining photoemission spectroscopy, sheet resistance measurements and organic light emitting diode (OLED) characterization. Thin (<5 nm) MoO3 layers give rise to an 1.9 eV large interface dipole and a downwards bending of the MoO3 conduction band towards the Fermi level of graphene, leading to a near ideal alignment of the transport levels. The surface charge transfer manifests itself also as strong and stable p-type doping of the graphene layers, with the Fermi level downshifted by 0.25 eV and sheet resistance values consistently below 50 Ω/sq for few-layer graphene films. The combination of stable doping and highly efficient charge extraction/injection allows the demonstration of simplified graphene-based OLED device stacks with efficiencies exceeding those of standard ITO reference devices.

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

NASA Astrophysics Data System (ADS)

Schüffelgen, Peter; Rosenbach, Daniel; Neumann, Elmar; Stehno, Martin P.; Lanius, Martin; Zhao, Jialin; Wang, Meng; Sheehan, Brendan; Schmidt, Michael; Gao, Bo; Brinkman, Alexander; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev

2017-11-01

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3-4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.

Polyurethane nanofiber strain sensors via in situ polymerization of polypyrrole and application to monitoring joint flexion

NASA Astrophysics Data System (ADS)

Kim, Inhwan; Cho, Gilsoo

2018-07-01

Strain sensors made of intrinsically conductive polymers (ICPs) and nanofibers were fabricated and tested for suitability for use in wearable technology. The sensors were fabricated and evaluated based on their surface appearances, and electrical, tensile, and chemical/thermal properties. Polypyrrole (PPy) was in situ polymerized onto polyurethane (PU) nanofiber substrates by exposing pyrrole monomers to ammonium persulfate as oxidant and 2,6-naphthalenedisulfonic acid disodium salt as doping agents in an aqueous bath. The PPy treated PU nanofibers were then coated with polydimethylsiloxane (PDMS). Both pyrrole concentrations and layer numbers were significantly related to change in electrical conductivity. Specimen treated with 0.1 M of PPy and having three layered structure showed the best electrical conductivity. Regarding tensile strength, the in situ polymerization process decreased tensile strength because the oxidant chemically degraded the PU fibers. Adding layers and PDMS treatment generally improved tensile properties while adding layers created fracture parts in the stress–strain curves. The treatment condition of 0.1 M of PPy, two layered, and PDMS treated specimen showed the best tensile properties as a strain sensor. The chemical property evaluation with Fourier transform infrared and x-ray photoelectron spectroscopy tests showed successful PPy polymerization and PDMS treatments. The functional groups and chemical bonds in polyol, urethane linkage, backbone ring structure in PPy, silicon-based functional groups in PDMS, and elemental content changes by treatment at each stage were characterized. The real-time data acquired from the dummy and five human subjects with repetition of motion at three different speeds of 0.16, 0.25 and 0.5 Hz generated similar trends and tendencies. The PU nanofiber sensors based on PPy and PDMS treatments in this study point to the possibility of developing textiles based wearable strain sensors developed using ICPs.

NOL specular spin-valve heads using an ultrathin CoFe free layer

NASA Astrophysics Data System (ADS)

Fukuzawa, Hideaki; Koi, Katsuhiko; Tomita, Hiroshi; Fuke, Hiromi Niu; Kamiguchi, Yuzo; Iwasaki, Hitoshi; Sahashi, Masashi

2001-10-01

This paper reports the film and head performance of specular spin valves with nano-oxide layer (NOL-SPSV). A large MR ratio of 17% was obtained by using an ultrathin CoFe free layer with a high conductance Cu layer, which decreases the sense current field of a free layer and brings good soft magnetic characteristics. Prototype heads with a read track width of 0.47-0.61 μm were fabricated by using NOL-SPSV films with an MR ratio of 14-15%, Hua˜400 Oe, and Hc˜5 Oe. High output signal voltage of 8-11 mV/μm was realized in the NOL-SPSV heads.

Facile synthesis of 3D MnNi-layered double hydroxides (LDH)/graphene composites from directly graphites for pseudocapacitor and their electrochemical analysis

NASA Astrophysics Data System (ADS)

Lee, Ilbok; Jeong, Gyoung Hwa; An, Soyeon; Kim, Sang-Wook; Yoon, Songhun

2018-01-01

Herein, MnNi-layered double hydroxides (LDH) were imbibed within the interlayers of graphene nanosheets. The anionic surfactant, sodium dodecyl sulfate played a role of graphite exfoliator adding interaction with metal cations. Using this process, layered MnNi-LDH-graphene nanocomposite was prepared without formation of graphene oxide. When applied into pseudocapacitor electrode, LDH-graphene with optimal ratio between Mn and Ni exhibited very stable cycle with 90% at 1400 cycles and high energy 47.29 Wh kg-1 at the power density of 7473 W kg-1, which was attributed to highly stable layered LDH structure within conductive graphene layers.

Slurry spin coating of thin film yttria stabilized zirconia/gadolinia doped ceria bi-layer electrolytes for solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Kim, Hyun Joong; Kim, Manjin; Neoh, Ke Chean; Han, Gwon Deok; Bae, Kiho; Shin, Jong Mok; Kim, Gyu-Tae; Shim, Joon Hyung

2016-09-01

Thin ceramic bi-layered membrane comprising yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is fabricated by the cost-effective slurry spin coating technique, and it is evaluated as an electrolyte of solid oxide fuel cells (SOFCs). It is demonstrated that the slurry spin coating method is capable of fabricating porous ceramic films by adjusting the content of ethyl-cellulose binders in the source slurry. The porous GDC layer deposited by spin coating under an optimal condition functions satisfactorily as a cathode-electrolyte interlayer in the test SOFC stack. A 2-μm-thick electrolyte membrane of the spin-coated YSZ/GDC bi-layer is successfully deposited as a dense and stable film directly on a porous NiO-YSZ anode support without any interlayers, and the SOFC produces power output over 200 mW cm-2 at 600 °C, with an open circuit voltage close to 1 V. Electrochemical impedance spectra analysis is conducted to evaluate the performance of the fuel cell components in relation with the microstructure of the spin-coated layers.

Compatibility tests of steels in flowing liquid lead-bismuth

NASA Astrophysics Data System (ADS)

Barbier, F.; Benamati, G.; Fazio, C.; Rusanov, A.

2001-06-01

The behaviour of steels exposed to flowing Pb-55Bi was evaluated. The materials tested are the two austenitic steels AISI 316L and 1.4970, and the six martensitic steels Optifer IVc, T91, Batman 27, Batman 28, EP823 and EM10 which were exposed to flowing Pb-55Bi for 1000, 2000 and 3000 h and at two temperatures (573 and 743 K). The corrosion tests were conducted in the non-isothermal loop of IPPE-Obninsk under a controlled oxygen level (10 -6 wt%). The compatibility study showed that at a lower temperature, a very thin oxide layer (<1 μm) was formed on the steels. At higher temperature, austenitic steels also exhibited a thin oxide layer sufficient to prevent their dissolution in the melt. A thicker oxide, which grew according to a parabolic law, was observed on the surface of the martensitic steels. The oxidation resistance behaviour of the martensitic steels was correlated with their alloying elements.

Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure

NASA Astrophysics Data System (ADS)

Lo, Chun-Chieh; Hsieh, Tsung-Eong

2016-09-01

Fully transparent resistive random access memory (TRRAM) containing amorphous indium gallium zinc oxide as the resistance switching (RS) layer and transparent conducting oxides (indium zinc oxide and indium tin oxide) as the electrodes was prepared. Optical measurement indicated the transmittance of device exceeds 80% in visible-light wavelength range. TRRAM samples exhibited the forming-free feature and the best electrical performance (V SET  =  0.61 V V RESET  =  -0.76 V R HRS/R LRS (i.e. the R-ratio)  >103) was observed in the device subject to a post-annealing at 300 °C for 1 hr in atmospheric ambient. Such a sample also exhibited satisfactory endurance and retention properties at 85 °C as revealed by the reliability tests. Electrical measurement performed in vacuum ambient indicated that the RS mechanism correlates with the charge trapping/de-trapping process associated with oxygen defects in the RS layer.

Robust, functional nanocrystal solids by infilling with atomic layer deposition.

PubMed

Liu, Yao; Gibbs, Markelle; Perkins, Craig L; Tolentino, Jason; Zarghami, Mohammad H; Bustamante, Jorge; Law, Matt

2011-12-14

Thin films of colloidal semiconductor nanocrystals (NCs) are inherently metatstable materials prone to oxidative and photothermal degradation driven by their large surface-to-volume ratios and high surface energies. (1) The fabrication of practical electronic devices based on NC solids hinges on preventing oxidation, surface diffusion, ripening, sintering, and other unwanted physicochemical changes that can plague these materials. Here we use low-temperature atomic layer deposition (ALD) to infill conductive PbSe NC solids with metal oxides to produce inorganic nanocomposites in which the NCs are locked in place and protected against oxidative and photothermal damage. Infilling NC field-effect transistors and solar cells with amorphous alumina yields devices that operate with enhanced and stable performance for at least months in air. Furthermore, ALD infilling with ZnO lowers the height of the inter-NC tunnel barrier for electron transport, yielding PbSe NC films with electron mobilities of 1 cm2 V(-1) s(-1). Our ALD technique is a versatile means to fabricate robust NC solids for optoelectronic devices.

Fabrication of solid oxide fuel cell by electrochemical vapor deposition

DOEpatents

Riley, B.; Szreders, B.E.

1988-04-26

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Effect of yttrium on martensite-austenite phase transformation temperatures and high temperature oxidation kinetics of Ti-Ni-Hf high-temperature shape memory alloys

NASA Astrophysics Data System (ADS)

Kim, Jeoung Han; Kim, Kyong Min; Yeom, Jong Taek; Young, Sung

2016-03-01

The effect of yttrium (< 5.5 at%) on the martensite-austenite phase transformation temperatures, microstructural evolution, and hot workability of Ti-Ni-Hf high-temperature shape memory alloys is investigated. For these purposes, differential scanning calorimetry, hot compression, and thermo-gravimetric tests are conducted. The phase transformation temperatures are not noticeably influenced by the addition of yttrium up to 4.5 at%. Furthermore, the hot workability is not significantly affected by the yttrium addition up to 1.0 at%. However, when the amount of yttrium addition exceeds 1.0 at%, the hot workability deteriorates significantly. In contrast, remarkable improvement in the high temperature oxidation resistance due to the yttrium addition is demonstrated. The total thickness of the oxide layers is substantially thinner in the Y-added specimen. In particular, the thickness of (Ti,Hf) oxide layer is reduced from 200 µm to 120 µm by the addition of 0.3 at% Y.

Towards spin-polarized two-dimensional electron gas at a surface of an antiferromagnetic insulating oxide

DOE PAGES

Mishra, Rohan; Kim, Young -Min; He, Qian; ...

2016-07-18

Here, the surfaces of transition-metal oxides with the perovskite structure are fertile grounds for the discovery of novel electronic and magnetic phenomena. In this article, we combine scanning transmission electron microscopy (STEM) with density functional theory (DFT) calculations to obtain the electronic and magnetic properties of the (001) surface of a (LaFeO 3) 8/(SrFeO 3) 1 superlattice film capped with four layers of LaFeO 3. Simultaneously acquired STEM images and electron-energy-loss spectra reveal the surface structure and a reduction in the oxidation state of iron from Fe 3+ in the bulk to Fe 2+ at the surface, extending over severalmore » atomic layers, which signals the presence of oxygen vacancies. The DFT calculations confirm the reduction in terms of oxygen vacancies and further demonstrate the stabilization of an exotic phase in which the surface layer is half metallic and ferromagnetic, while the bulk remains antiferromagnetic and insulating. Based on the calculations, we predict that the surface magnetism and conductivity can be controlled by tuning the partial pressure of oxygen.« less

Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition

DOEpatents

Cho, Jung Young; Ahn, Dongjoon; Salvador, James R.; Meisner, Gregory P.

2016-06-07

A thermoelectric material includes a substrate particle and a plurality of conformal oxide layers formed on the substrate particle. The plurality of conformal oxide layers has a total oxide layer thickness ranging from about 2 nm to about 20 nm. The thermoelectric material excludes oxide nanoparticles. A method of making the thermoelectric material is also disclosed herein.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

PubMed

Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

2015-03-24

Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

Improve oxidation resistance at high temperature by nanocrystalline surface layer

NASA Astrophysics Data System (ADS)

Xia, Z. X.; Zhang, C.; Huang, X. F.; Liu, W. B.; Yang, Z. G.

2015-08-01

An interesting change of scale sequence occurred during oxidation of nanocrystalline surface layer by means of a surface mechanical attrition treatment. The three-layer oxide structure from the surface towards the matrix is Fe3O4, spinel FeCr2O4 and corundum (Fe,Cr)2O3, which is different from the typical two-layer scale consisted of an Fe3O4 outer layer and an FeCr2O4 inner layer in conventional P91 steel. The diffusivity of Cr, Fe and O is enhanced concurrently in the nanocrystalline surface layer, which causes the fast oxidation in the initial oxidation stage. The formation of (Fe,Cr)2O3 inner layer would inhabit fast diffusion of alloy elements in the nanocrystalline surface layer of P91 steel in the later oxidation stage, and it causes a decrease in the parabolic oxidation rate compared with conventional specimens. This study provides a novel approach to improve the oxidation resistance of heat resistant steel without changing its Cr content.

Liquid-phase and solid-phase microwave irradiations for reduction of graphite oxide

NASA Astrophysics Data System (ADS)

Zhao, Na; Wen, Chen-Yu; Zhang, David Wei; Wu, Dong-Ping; Zhang, Zhi-Bin; Zhang, Shi-Li

2014-12-01

In this paper, two microwave irradiation methods: (i) liquid-phase microwave irradiation (MWI) reduction of graphite oxide suspension dissolved in de-ionized water and N, N-dimethylformamide, respectively, and (ii) solid-phase MWI reduction of graphite oxide powder have been successfully carried out to reduce graphite oxide. The reduced graphene oxide products are thoroughly characterized by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectral analysis, Raman spectroscopy, UV-Vis absorption spectral analysis, and four-point probe conductivity measurements. The results show that both methods can efficiently remove the oxygen-containing functional groups attached to the graphite layers, though the solid-phase MWI reduction method can obtain far more efficiently a higher quality-reduced graphene oxide with fewer defects. The I(D)/I(G) ratio of the solid-phase MWI sample is as low as 0.46, which is only half of that of the liquid-phase MWI samples. The electrical conductivity of the reduced graphene oxide by the solid method reaches 747.9 S/m, which is about 25 times higher than that made by the liquid-phase method.

Effect of thermal oxidation on corrosion and corrosion-wear behaviour of a Ti-6Al-4V alloy.

PubMed

Güleryüz, Hasan; Cimenoğlu, Hüseyin

2004-07-01

In this study, comparative investigation of thermal oxidation treatment for Ti-6Al-4V was carried out to determine the optimum oxidation conditions for further evaluation of corrosion-wear performance. Characterization of modified surface layers was made by means of microscopic examinations, hardness measurements and X-ray diffraction analysis. Optimum oxidation condition was determined according to the results of accelerated corrosion tests made in 5m HCl solution The examined Ti-6Al-4V alloy exhibited excellent resistance to corrosion after oxidation at 600 degrees C for 60 h. This oxidation condition achieved 25 times higher wear resistance than the untreated alloy during reciprocating wear test conducted in a 0.9% NaCl solution.

Flexible diode of polyaniline/ITO heterojunction on PET substrate

NASA Astrophysics Data System (ADS)

Bera, A.; Deb, K.; Kathirvel, V.; Bera, T.; Thapa, R.; Saha, B.

2017-10-01

Hybrid organic-inorganic heterojunction between polyaniline and ITO film coated on flexible polyethylene terephthalate (PET) substrate has been prepared through vapor phase polymerization process. Polaron and bipolaron like defect states induced hole transport and exceptional mobility makes polyaniline a noble hole transport layer. Thus a p-n junction has been obtained between the hole transport layer of polyaniline and highly conductive n-type layer of ITO film. The synthesis process was carried out using FeCl3 as polymerizing agent in the oxidative chemical polymerization process. The prepared polyaniline has been found to be crystalline on characterization through X-ray diffraction measurement. X-ray photoelectron spectroscopic measurements were done for compositional analysis of the prepared film. The UV-vis-NIR absorbance spectra obtained for polyaniline shows the characteristics absorbance as observed for highly conductive polyaniline and confirms the occurrence of partially oxidized emeraldine form of polyaniline. The energy band gap of the polyaniline has been obtained as 2.52 eV, by analyzing the optical transmittance spectra. A rectifying behavior has been observed in the electrical J-V plot, which is of great significance in designing polymer based flexible electronic devices.

Method of adhesion between an oxide layer and a metal layer

DOEpatents

Jennison, Dwight R.; Bogicevic, Alexander; Kelber, Jeffry A.; Chambers, Scott A.

2004-09-14

A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

NASA Astrophysics Data System (ADS)

Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

2018-04-01

Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE PAGES

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine; ...

2016-08-01

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Large-area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange

NASA Astrophysics Data System (ADS)

Browning, Paul; Eichfeld, Sarah; Zhang, Kehao; Hossain, Lorraine; Lin, Yu-Chuan; Wang, Ke; Lu, Ning; Waite, A. R.; Voevodin, A. A.; Kim, Moon; Robinson, Joshua A.

2015-03-01

Few-layer tungsten diselenide (WSe2) is attractive as a next-generation electronic material as it exhibits modest carrier mobilities and energy band gap in the visible spectra, making it appealing for photovoltaic and low-powered electronic applications. Here we demonstrate the scalable synthesis of large-area, few-layer WSe2 via replacement of oxygen in hexagonally stabilized tungsten oxide films using dimethyl selenium. Cross-sectional transmission electron microscopy reveals successful control of the final WSe2 film thickness through control of initial tungsten oxide thickness, as well as development of layered films with grain sizes up to several hundred nanometers. Raman spectroscopy and atomic force microscopy confirms high crystal uniformity of the converted WSe2, and time domain thermo-reflectance provide evidence that near record low thermal conductivity is achievable in ultra-thin WSe2 using this method.

Surface electrical properties of stainless steel fibres: An AFM-based study

NASA Astrophysics Data System (ADS)

Yin, Jun; D'Haese, Cécile; Nysten, Bernard

2015-03-01

Atomic force microscopy (AFM) electrical modes were used to study the surface electrical properties of stainless steel fibres. The surface electrical conductivity was studied by current sensing AFM and I-V spectroscopy. Kelvin probe force microscopy was used to measure the surface contact potential. The oxide film, known as passivation layer, covering the fibre surface gives rise to the observation of an apparently semiconducting behaviour. The passivation layer generally exhibits a p-type semiconducting behaviour, which is attributed to the predominant formation of chromium oxide on the surface of the stainless steel fibres. At the nanoscale, different behaviours are observed from points to points, which may be attributed to local variations of the chemical composition and/or thickness of the passivation layer. I-V curves are well fitted with an electron tunnelling model, indicating that electron tunnelling may be the predominant mechanism for electron transport.

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

NASA Astrophysics Data System (ADS)

Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

2016-07-01

We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Anisotropic electrical conduction in ferromagnetic-antiferromagnetic-ferromagnetic oxide trilayers

NASA Astrophysics Data System (ADS)

Padhan, P.; Prellier, W.

2007-07-01

An antiferromagnetic layer of an insulator PrMnO3 , CaMnO3 , or Pr0.5Ca0.5MnO3 has been sandwiched between two layers of ferromagnetic SrRuO3 on (001)-oriented SrTiO3 and LaAlO3 substrates using the pulsed laser deposition technique. Magnetotransport measurements reveal a change of anisotropy in the case of trilayers having a Pr0.5Ca0.5MnO3 or a CaMnO3 spacer layer as compared to that of 20unit cells thick film of SrRuO3 , while in the case of PrMnO3 spacer layer, the change of anisotropy is negligible. In addition, two switching magnetic fields are observed with the trilayer made of PrMnO3 spacer layer in the field-dependent anisotropic magnetoresistance. The results are discussed using the concept of spin-orbit coupling and spin mixing conduction process at the interfaces.

Adhesive Stretchable Printed Conductive Thin Film Patterns on PDMS Surface with an Atmospheric Plasma Treatment.

PubMed

Li, Chun-Yi; Liao, Ying-Chih

2016-05-11

In this study, a plasma surface modification with printing process was developed to fabricate printed flexible conductor patterns or devices directly on polydimethylsiloxane (PDMS) surface. An atmospheric plasma treatment was first used to oxidize the PDMS surface and create a hydrophilic silica surface layer, which was confirmed with photoelectron spectra. The plasma operating parameters, such as gas types and plasma powers, were optimized to obtain surface silica layers with the longest lifetime. Conductive paste with epoxy resin was screen-printed on the plasma-treated PDMS surface to fabricate flexible conductive tracks. As a result of the strong binding forces between epoxy resin and the silica surface layer, the printed patterns showed great adhesion on PDMS and were undamaged after several stringent adhesion tests. The printed conductive tracks showed strong mechanical stability and exhibited great electric conductivity under bending, twisting, and stretching conditions. Finally, a printed pressure sensor with good sensitivity and a fast response time was fabricated to demonstrate the capability of this method for the realization of printed electronic devices.

Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers

NASA Astrophysics Data System (ADS)

Kim, Woo Kyum; Wu, Chaoxing; Lee, Dea Uk; Kim, Hyoun Woo; Kim, Tae Whan

2018-01-01

Current-voltage (I-V) curves for the Al/polymer (9-vinylcarbazole) (PVK)/graphene oxide (GO):mica/PVK/indium-tin oxide (ITO) devices at 300 K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 2 × 104, which was approximately 10 times larger than that of the device without a PVK layer. The endurance number of ON/OFF switchings for the Al/PVK/GO:mica/PVK/ITO device was 1 × 102 cycles, which was 20 times larger than that for the Al/GO:mica/ITO device. The ;erase; voltages were distributed between 2.3 and 3 V, and the ;write; voltages were distributed between -1.2 and -0.5 V. The retention time for the Al/PVK/GO:mica/PVK/ITO device was above 1 × 104 s, indicative of the memory stability of the device. The carrier transport mechanisms occurring in the Al/PVK/GO:mica/PVK/ITO and the Al/GO:mica/ITO devices are described on the basis of the I-V results and the energy band diagrams.

Reduction of Iron-Oxide-Carbon Composites: Part III. Shrinkage of Composite Pellets during Reduction

NASA Astrophysics Data System (ADS)

Halder, S.; Fruehan, R. J.

2008-12-01

This article involves the evaluation of the volume change of iron-oxide-carbon composite pellets and its implications on reduction kinetics under conditions prevalent in a rotary hearth furnace (RHF) that were simulated in the laboratory. The pellets, in general, were found to shrink considerably during the reduction due to the loss of carbon and oxygen from the system, sintering of the iron-oxide, and formation of a molten slag phase at localized regions inside the pellets due to the presence of binder and coal/wood-charcoal ash at the reduction temperatures. One of the shortcomings of the RHF ironmaking process has been the inability to use multiple layers of composite pellets because of the impediment in heat transport to the lower layers of a multilayer bed. However, pellet shrinkage was found to have a strong effect on the reduction kinetics by virtue of enhancing the external heat transport to the lower layers. The volume change of the different kinds of composite pellets was studied as a function of reduction temperature and time. The estimation of the change in the amount of external heat transport with varying pellet sizes for a particular layer of a multilayer bed was obtained by conducting heat-transfer tests using inert low-carbon steel spheres. It was found that if the pellets of the top layer of the bed shrink by 30 pct, the external heat transfer to the second layer increases by nearly 6 times.

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Acoustic wave-driven oxidized liquid metal-based energy harvester

NASA Astrophysics Data System (ADS)

Jeon, Jinpyo; Chung, Sang Kug; Lee, Jeong-Bong; Doo, Seok Joo; Kim, Daeyoung

2018-06-01

We report an oxidized liquid metal droplet-based energy harvester that converts acoustic energy into electrical energy by modulating an electrical double layer that originates from the deformation of the oxidized liquid metal droplet. Gallium-based liquid metal alloy has been developed for various applications owing to the outstanding material properties, such as its high electrical conductivity (metallic property) and unlimited deformability (liquid property). In this study, we demonstrated energy harvesting using an electrical double layer between the acoustic wave-modulated liquid metal droplet and two electrodes. The proposed energy harvester consisted of top and bottom electrodes covered with the dielectric layer and a Gallium-based liquid metal droplet placed between the electrodes. When we applied an external bias voltage and acoustic wave to the proposed device, the contact area between the liquid metal droplet and the electrodes changed, leading to the variation of the capacitance in the electrical double layer and the generation of electrical output current. Using the proposed energy harvester, the maximum output current of 41.2 nA was generated with an applied acoustic wave of 30 Hz. In addition, we studied the relationships between the maximum output current and a variety of factors, such as the size of the liquid metal droplet, the thickness of the hydrophobic layer, and the distance between the top and bottom electrode plates.

Decoupling the refractive index from the electrical properties of transparent conducting oxides via periodic superlattices.

PubMed

Caffrey, David; Norton, Emma; Coileáin, Cormac Ó; Smith, Christopher M; Bulfin, Brendan; Farrell, Leo; Shvets, Igor V; Fleischer, Karsten

2016-09-13

We demonstrate an alternative approach to tuning the refractive index of materials. Current methodologies for tuning the refractive index of a material often result in undesirable changes to the structural or optoelectronic properties. By artificially layering a transparent conducting oxide with a lower refractive index material the overall film retains a desirable conductivity and mobility while acting optically as an effective medium with a modified refractive index. Calculations indicate that, with our refractive index change of 0.2, a significant reduction of reflective losses could be obtained by the utilisation of these structures in optoelectronic devices. Beyond this, periodic superlattice structures present a solution to decouple physical properties where the underlying electronic interaction is governed by different length scales.

Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.

PubMed

Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M

2011-02-02

Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.

Method of forming catalyst layer by single step infiltration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gerdes, Kirk; Lee, Shiwoo; Dowd, Regis

Provided herein is a method for electrocatalyst infiltration of a porous substrate, of particular use for preparation of a cathode for a solid oxide fuel cell. The method generally comprises preparing an electrocatalyst infiltrate solution comprising an electrocatalyst, surfactant, chelating agent, and a solvent; pretreating a porous mixed ionic-electric conductive substrate; and applying the electrocatalyst infiltration solution to the porous mixed ionic-electric conductive substrate.

Biquadratic coupling through nano-oxide layers in pinned layers of IrMn-based spin valves

NASA Astrophysics Data System (ADS)

Lai, Chih-Huang; Lu, K. H.

2003-05-01

We have investigated the coupling between top and bottom pinned layers through various nano-oxide layers (NOLs) in IrMn-based spin valves. The NOLs were formed by using oxygen-plasma oxidation or natural oxidation on 1 nm metallic layers. By inserting naturally oxidized Co-NOLs in the pinned layer, strong ferromagnetic coupling through NOLs and high specularity at the NOL interface were achieved. In contrast, when the plasma-oxidized Co-NOLs were inserted, ferromagnetic coupling through NOLs disappeared, plausibly due to the formation of nonferromagnetic oxides, which led to a low magnetoresistance (MR). Insertion of naturally oxidized Ni80Fe20-NOLs showed the same results as that of naturally oxidized Co-NOLs. On the other hand, biquadratic coupling between top and bottom pinned-Co90Fe10 layers was observed by inserting plasma-oxidized Ni80Fe20-NOLs. The highest MR was obtained when the field was applied along the direction perpendicular to the field-annealing direction. Similar biquadratic coupling was also found with naturally oxidized or plasma-oxidized Fe-NOLs. We suggest that the biquadratic coupling between pinned Co90Fe10 layers through NOLs results from the coupling between Fe (or Co90Fe10) and Fe+3 oxides

Methane Decomposition and Carbon Growth on Y2O3, Yttria-Stabilized Zirconia, and ZrO2

PubMed Central

2014-01-01

Carbon deposition following thermal methane decomposition under dry and steam reforming conditions has been studied on yttria-stabilized zirconia (YSZ), Y2O3, and ZrO2 by a range of different chemical, structural, and spectroscopic characterization techniques, including aberration-corrected electron microscopy, Raman spectroscopy, electric impedance spectroscopy, and volumetric adsorption techniques. Concordantly, all experimental techniques reveal the formation of a conducting layer of disordered nanocrystalline graphite covering the individual grains of the respective pure oxides after treatment in dry methane at temperatures T ≥ 1000 K. In addition, treatment under moist methane conditions causes additional formation of carbon-nanotube-like architectures by partial detachment of the graphite layers. All experiments show that during carbon growth, no substantial reduction of any of the oxides takes place. Our results, therefore, indicate that these pure oxides can act as efficient nonmetallic substrates for methane-induced growth of different carbon species with potentially important implications regarding their use in solid oxide fuel cells. Moreover, by comparing the three oxides, we could elucidate differences in the methane reactivities of the respective SOFC-relevant purely oxidic surfaces under typical SOFC operation conditions without the presence of metallic constituents. PMID:24587591

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

NASA Astrophysics Data System (ADS)

Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

2017-08-01

Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3(-).

PubMed

Ohta, Hiromichi; Sugiura, Kenji; Koumoto, Kunihito

2008-10-06

Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic "real" properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoelectric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness ( approximately 0.4 nm) of SrTiO 3.

Efficient Transfer Doping of Carbon Nanotube Forests by MoO3.

PubMed

Esconjauregui, Santiago; D'Arsié, Lorenzo; Guo, Yuzheng; Yang, Junwei; Sugime, Hisashi; Caneva, Sabina; Cepek, Cinzia; Robertson, John

2015-10-27

We dope nanotube forests using evaporated MoO3 and observe the forest resistivity to decrease by 2 orders of magnitude, reaching values as low as ∼5 × 10(-5) Ωcm, thus approaching that of copper. Using in situ photoemission spectroscopy, we determine the minimum necessary MoO3 thickness to dope a forest and study the underlying doping mechanism. Homogenous coating and tube compaction emerge as key factors for decreasing the forest resistivity. When all nanotubes are fully coated with MoO3 and packed, conduction channels are created both inside the nanotubes and on the outside oxide layer. This is supported by density functional theory calculations, which show a shift of the Fermi energy of the nanotubes and the conversion of the oxide into a layer of metallic character. MoO3 doping removes the need for chirality control during nanotube growth and represents a step forward toward the use of forests in next-generation electronics and in power cables or conductive polymers.

Conducting interface in oxide homojunction: Understanding of superior properties in black TiO 2

DOE PAGES

Lu, Xujie; Chen, Aiping; Luo, Yongkang; ...

2016-09-14

Black TiO 2 nanoparticles with a crystalline core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO 2. The fundamental mechanisms underlying these enhancements, however, remain unclear, largely due to the inherent complexities and limitations of powder materials. Here, we fabricate TiO 2 homojunction films consisting of an oxygen-deficient amorphous layer on top of a highly crystalline layer, to simulate the structural/functional configuration of black TiO 2 nanoparticles. Metallic conduction is achieved at the crystalline–amorphous homointerface via electronic interface reconstruction, which we show to be the main reason for the enhanced electron transport of black TiO 2.more » As a result, this work not only achieves an unprecedented understanding of black TiO 2 but also provides a new perspective for investigating carrier generation and transport behavior at oxide interfaces, which are of tremendous fundamental and technological interest.« less

Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy

NASA Astrophysics Data System (ADS)

Aetukuri, Nagaphani B.; Gray, Alexander X.; Drouard, Marc; Cossale, Matteo; Gao, Li; Reid, Alexander H.; Kukreja, Roopali; Ohldag, Hendrik; Jenkins, Catherine A.; Arenholz, Elke; Roche, Kevin P.; Dürr, Hermann A.; Samant, Mahesh G.; Parkin, Stuart S. P.

2013-10-01

External control of the conductivity of correlated oxides is one of the most promising schemes for realizing energy-efficient electronic devices. Vanadium dioxide (VO2), an archetypal correlated oxide compound, undergoes a temperature-driven metal-insulator transition near room temperature with a concomitant change in crystal symmetry. Here, we show that the metal-insulator transition temperature of thin VO2(001) films can be changed continuously from ~285 to ~345K by varying the thickness of the RuO2 buffer layer (resulting in different epitaxial strains). Using strain-, polarization- and temperature-dependent X-ray absorption spectroscopy, in combination with X-ray diffraction and electronic transport measurements, we demonstrate that the transition temperature and the structural distortion across the transition depend on the orbital occupancy in the metallic state. Our findings open up the possibility of controlling the conductivity in atomically thin VO2 layers by manipulating the orbital occupancy by, for example, heterostructural engineering.

A dendrite-suppressing composite ion conductor from aramid nanofibres

NASA Astrophysics Data System (ADS)

Tung, Siu-On; Ho, Szushen; Yang, Ming; Zhang, Ruilin; Kotov, Nicholas A.

2015-01-01

Dendrite growth threatens the safety of batteries by piercing the ion-transporting separators between the cathode and anode. Finding a dendrite-suppressing material that combines high modulus and high ionic conductance has long been considered a major technological and materials science challenge. Here we demonstrate that these properties can be attained in a composite made from Kevlar-derived aramid nanofibres assembled in a layer-by-layer manner with poly(ethylene oxide). Importantly, the porosity of the membranes is smaller than the growth area of the dendrites so that aramid nanofibres eliminate ‘weak links’ where the dendrites pierce the membranes. The aramid nanofibre network suppresses poly(ethylene oxide) crystallization detrimental for ion transport, giving a composite that exhibits high modulus, ionic conductivity, flexibility, ion flux rates and thermal stability. Successful suppression of hard copper dendrites by the composite ion conductor at extreme discharge conditions is demonstrated, thereby providing a new approach for the materials engineering of solid ion conductors.

Transport properties of layered Ba(Pb,Bi)O3 thin films

NASA Astrophysics Data System (ADS)

Hassink, G. W. J.; Munakata, K.; Hammond, R. H.; Beasley, M. R.

2012-02-01

Doped BaBiO3 is a 3D oxide superconductor with a maximum Tc of 30 K for Ba0.6K0.4BiO3. There has been a lot of discussion on whether this high Tc can be explained purely by electron-phonon coupling with a high coupling constant λ. In addition, the presence of real-space paired 6s^2 electrons in the parent compound raise intriguing questions about whether there is an electron-electron coupling interaction as well. This possible negative-U interaction might be used to implement the suggestion by Berg, Orgad and Kivelson [Phys.Rev.B 78, 094509] that for a two-layer system where one layer provides electron pairing interaction and the other layer is conducting, the whole can be superconducting with a high Tc. Here we discuss the transport properties of BaPbO3/BaBiO3 bilayers, where the BaBiO3 layer is thought to act as the pairing layer, while the BaPbO3 acts as the conducting layer. The transport behavior changes to insulating upon decreasing the metallic BaPbO3 layer thickness at values that single films are expected to still be metallic.

Conductive paper fabricated by layer-by-layer assembly of polyelectrolytes and ITO nanoparticles

NASA Astrophysics Data System (ADS)

Peng, C. Q.; Thio, Y. S.; Gerhardt, R. A.

2008-12-01

A new salt-free approach was developed for fabricating conductive paper by layer-by-layer (LBL) assembly of conductive indium tin oxide (ITO) nanoparticles and polyelectrolytes onto wood fibers. Subsequent to the coating procedure, the fibers were manufactured into conductive paper using traditional paper making methods. The wood fibers were first coated with polyethyleneimine (PEI) and then LBL assembled with poly(sodium 4-styrenesulfonate) (PSS) and ITO for several bilayers. The surface charge intensity of both the ITO nanoparticles and the coated wood fibers were evaluated by measuring the ζ-potential of the nanoparticles and short fibers, respectively. The ITO nanoparticles were found to preferentially aggregate on defects on the fiber surfaces and formed interconnected paths, which led to the formation of conductive percolation paths throughout the whole paper. With ten bilayer coatings, the as-made paper was made DC conductive, and its σdc was measured to be 5.2 × 10-6 S cm-1 in the in-plane (IP) direction, while the conductivity was 1.9 × 10-8 S cm-1 in the through-the-thickness (TT) direction. The percolation phenomena in these LBL-assembled ITO-coated paper fibers was evaluated using scanning electron microscopy (SEM), current atomic force microscopy (I-AFM), and impedance measurements. The AC electrical properties are reported for frequencies ranging from 0.01 Hz to 1 MHz. A clear transition from insulating to conducting behavior is observed in the AC conductivity.

Analysis of layer-by-layer thin-film oxide growth using RHEED and Atomic Force Microscopy

NASA Astrophysics Data System (ADS)

Adler, Eli; Sullivan, M. C.; Gutierrez-Llorente, Araceli; Joress, H.; Woll, A.; Brock, J. D.

2015-03-01

Reflection high energy electron diffraction (RHEED) is commonly used as an in situ analysis tool for layer-by-layer thin-film growth. Atomic force microscopy is an equally common ex situ tool for analysis of the film surface, providing visual evidence of the surface morphology. During growth, the RHEED intensity oscillates as the film surface changes in roughness. It is often assumed that the maxima of the RHEED oscillations signify a complete layer, however, the oscillations in oxide systems can be misleading. Thus, using only the RHEED maxima is insufficient. X-ray reflectivity can also be used to analyze growth, as the intensity oscillates in phase with the smoothness of the surface. Using x-ray reflectivity to determine the thin film layer deposition, we grew three films where the x-ray and RHEED oscillations were nearly exactly out of phase and halted deposition at different points in the growth. Pre-growth and post-growth AFM images emphasize the fact that the maxima in RHEED are not a justification for determining layer completion. Work conducted at the Cornell High Energy Synchrotron Source (CHESS) supported by NSF Awards DMR-1332208 and DMR-0936384 and the Cornell Center for Materials Research Shared Facilities are supported through DMR-1120296.

Electrically Conductive and Protective Coating for Planar SOFC Stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jung-Pyung; Stevenson, Jeffry W.

Ferritic stainless steels are preferred interconnect materials for intermediate temperature SOFCs because of their resistance to oxidation, high formability and low cost. However, their protective oxide layer produces Cr-containing volatile species at SOFC operating temperatures and conditions, which can cause cathode poisoning. Electrically conducting spinel coatings have been developed to prevent cathode poisoning and to maintain an electrically conductive pathway through SOFC stacks. However, this coating is not compatible with the formation of stable, hermetic seals between the interconnect frame component and the ceramic cell. Thus, a new aluminizing process has been developed by PNNL to enable durable sealing, preventmore » Cr evaporation, and maintain electrical insulation between stack repeat units. Hence, two different types of coating need to have stable operation of SOFC stacks. This paper will focus on the electrically conductive coating process. Moreover, an advanced coating process, compatible with a non-electrically conductive coating will be« less

Wide-Band Monolithic Acoustoelectric Memory Correlators.

DTIC Science & Technology

1982-11-01

piezoelectric and non- earlier analysis of thin- oxide varactors . The new analysis ex- conducting. Tapped structures which satisfy this criterion are plains...for tapped LiNbO3/metal- oxide - important realization. The logical consequence is that only silicon [26] structures is, in fact, not applicable here. It...Clarke, "The GaAs SAW depletion layer of’ the diode array. A more complex structure, diode storage correlalor," in 1980 Ultrasonics Synp. Proc., pp a GaAs

Tubular screen electrical connection support for solid oxide fuel cells

DOEpatents

Tomlins, Gregory W.; Jaszcar, Michael P.

2002-01-01

A solid oxide fuel assembly is made of fuel cells (16, 16', 18, 24, 24', 26), each having an outer interconnection layer (36) and an outer electrode (28), which are disposed next to each other with rolled, porous, hollow, electrically conducting metal mesh conductors (20, 20') between the fuel cells, connecting the fuel cells at least in series along columns (15, 15') and where there are no metal felt connections between any fuel cells.

Evaluation of Ni-Cr-base alloys for SOFC interconnect applications

NASA Astrophysics Data System (ADS)

Yang, Zhenguo; Xia, Guan-Guang; Stevenson, Jeffry W.

To further understand the suitability of Ni-Cr-base alloys for solid oxide fuel cell (SOFC) interconnect applications, three commercial Ni-Cr-base alloys, Haynes 230, Hastelloy S and Haynes 242 were selected and evaluated for oxidation behavior under different exposure conditions, scale conductivity and thermal expansion. Haynes 230 and Hastelloy S, which have a relatively high Cr content, formed a thin scale mainly comprised of Cr 2O 3 and (Mn,Cr,Ni) 3O 4 spinels under SOFC operating conditions, demonstrating excellent oxidation resistance and a high scale electrical conductivity. In contrast, a thick double-layer scale with a NiO outer layer above a chromia-rich substrate was grown on Haynes 242 in moist air or at the air side of dual exposure samples, indicating limited oxidation resistance for the interconnect application. With a face-centered-cubic (FCC) substrate, all three alloys possess a coefficient of thermal expansion (CTE) that is higher than that of candidate ferritic stainless steels, e.g. Crofer22 APU. Among the three alloys, Haynes 242, which is heavily alloyed with W and Mo and contains a low Cr content, demonstrated the lowest average CTE at 13.1 × 10 -6 K -1 from room temperature to 800 °C, but it was also observed that the CTE behavior of Haynes 242 was very non-linear.

Layer-by-Layer Evolution of a Two-Dimensional Electron Gas Near an Oxide Interface

NASA Astrophysics Data System (ADS)

Chang, Young Jun; Moreschini, Luca; Bostwick, Aaron; Gaines, Geoffrey A.; Kim, Yong Su; Walter, Andrew L.; Freelon, Byron; Tebano, Antonello; Horn, Karsten; Rotenberg, Eli

2013-09-01

We report the momentum-resolved measurement of a two-dimensional electron gas at the LaTiO3/SrTiO3 interface by angle-resolved photoemission spectroscopy (ARPES). Thanks to an advanced sample preparation technique, the orbital character of the conduction electrons and the electronic correlations can be accessed quantitatively as each unit cell layer is added. We find that all of these quantities change dramatically with distance from the interface. These findings open the way to analogous studies on other heterostructures, which are traditionally a forbidden field for ARPES.

AlGaInP light-emitting diodes with SACNTs as current-spreading layer

PubMed Central

2014-01-01

Transparent conductive current-spreading layer is important for quantum efficiency and thermal performance of light-emitting diodes (LEDs). The increasing demand for tin-doped indium oxide (ITO) caused the price to greatly increase. Super-aligned carbon nanotubes (SACNTs) and Au-coated SACNTs as current-spreading layer were applied on AlGaInP LEDs. The LEDs with Au-coated SACNTs showed good current spreading effect. The voltage bias at 20 mA dropped about 0.15 V, and the optical power increased about 10% compared with the LEDs without SACNTs. PMID:24712527

Catalytic Properties of Fe-containing Layered Aluminosilicates in Photo-oxidation of Dye “Methyl Green”

NASA Astrophysics Data System (ADS)

Shadrina, O. A.; Dashinamzhilova, E. Ts; Khankhasaeva, S. Ts

2017-11-01

The iron-containing materials with an iron content of 40 mg/g and 52.5 mg/g, a specific surface area of 107 m2/g and 96 m2/g are developed on the basis of natural layered aluminosilicate (montmorillonite) and polyhydroxo complexes of iron. It is shown that the materials exhibit high catalytic activity in the photo-oxidation of dye “Methyl Green”. The influence of physicochemical parameters (loading of the catalyst, a ratio of initial concentrations [H2O2]/[MG] on the efficiency of the dye photo-oxidation was established. The optimum conditions, which made it possible to achieve high mineralization and 100 % the dye oxidation efficiency were determined: the catalyst loading equal to 1.0 g/l and the ratio of [H2O2] and [MG] equal to stoichiometric ratio (55 mol/mol). The decrease of the total organic carbon content after photo-oxidation reaction was 56.5%. The average value of the quantum yield of the dye photo-oxidation was to 0.30 mol/Einstein. The results of the conducted research show that the developed iron-containing materials are the promising catalysts for photo-Fenton processes of oxidative degradation of organic compounds. The materials are of interest for use in wastewater treatment processes from toxic organic pollutants.

Synchrotron X-ray diffraction investigations on strains in the oxide layer of an irradiated Zircaloy fuel cladding

NASA Astrophysics Data System (ADS)

Chollet, Mélanie; Valance, Stéphane; Abolhassani, Sousan; Stein, Gene; Grolimund, Daniel; Martin, Matthias; Bertsch, Johannes

2017-05-01

For the first time the microstructure of the oxide layer of a Zircaloy-2 cladding after 9 cycles of irradiation in a boiling water reactor has been analyzed with synchrotron micro-X-ray diffraction. Crystallographic strains of the monoclinic and to some extent of the tetragonal ZrO2 are depicted through the thick oxide layer. Thin layers of sub-oxide at the oxide-metal interface as found for autoclave-tested samples and described in the literature, have not been observed in this material maybe resulting from irradiation damage. Shifts of selected diffraction peaks of the monoclinic oxide show that the uniform strain produced during oxidation is orientated in the lattice and displays variations along the oxide layer. Diffraction peaks and their shifts from families of diffracting planes could be translated into a virtual tensor. This virtual tensor exhibits changes through the oxide layer passing by tensile or compressive components.

Characterization of strain relaxation behavior in Si1- x Ge x epitaxial layers by dry oxidation

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Park, Seran; Ko, Dae-Hong

2017-11-01

We fabricated fully strained Si0.77Ge0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation and the effect of oxidation temperatures and times. After the oxidation process, a Ge-rich layer was formed between the oxide and the remaining Si0.77Ge0.23 layer. Using reciprocal space mapping measurements, we confirmed that the strain of the Si0.77Ge0.23 layers was efficiently relaxed after oxidation, with a maximum relaxation value of 70% after oxidation at 850 °C for 120 min. The surface of Si0.77Ge0.23 layer after strain relaxation by dry oxidation was smoother than a thick Si0.77Ge0.23 layer, which achieved a similar strain relaxation value by increasing the film thickness. Additionally, N2 annealing was performed in order to compare its effect on the relaxation compared to dry oxidation and to identify relaxation mechanisms, other than the thermally driven ones, occurring during dry oxidation.

Room temperature ferromagnetic and semiconducting properties of graphene adsorbed with cobalt oxide using electrochemical method

NASA Astrophysics Data System (ADS)

Park, Chang-Soo; Lee, Kyung Su; Chu, Dongil; Lee, Juwon; Shon, Yoon; Kim, Eun Kyu

2017-12-01

We report the room temperature ferromagnetic properties of graphene adsorbed by cobalt oxide using electrochemical method. The cobalt oxide doping onto graphene was carried out in 0.1 M LiCoO2/DI-water solution. The doped graphene thin film was determined to be a single layer from Raman analysis. The CoO doped graphene has a clear ferromagnetic hysteresis at room temperature and showed a remnant magnetization, 128.2 emu/cm3. The temperature dependent conductivity of the adsorbed graphene showed the semiconducting behavior and a band gap opening of 0.12 eV.

Rational and practical exfoliation of graphite using well-defined poly(3-hexylthiophene) for the preparation of conductive polymer/graphene composite.

PubMed

Iguchi, Hiroki; Higashi, Chisato; Funasaki, Yuichi; Fujita, Keisuke; Mori, Atsunori; Nakasuga, Akira; Maruyama, Tatsuo

2017-01-06

Processing and manipulation of highly conductive pristine graphene in large quantities are still major challenges in the practical application of graphene for electric device. In the present study, we report the liquid-phase exfoliation of graphite in toluene using well-defined poly(3-hexylthiophene) (P3HT) to produce a P3HT/graphene composite. We synthesize and use regioregular P3HT with controlled molecular weights as conductive dispersants for graphene. Simple ultrasonication of graphite flakes with the P3HT successfully produces single-layer and few-layer graphene sheets dispersed in toluene. The produced P3HT/graphene composite can be used as conductive graphene ink, indicating that the P3HT/graphene composite has high electrical conductivity owing to the high conductivity of P3HT and graphene. The P3HT/graphene composite also works as an oxidation-resistant and conductive film for a copper substrate, which is due to the high gas-barrier property of graphene.

Rational and practical exfoliation of graphite using well-defined poly(3-hexylthiophene) for the preparation of conductive polymer/graphene composite

NASA Astrophysics Data System (ADS)

Iguchi, Hiroki; Higashi, Chisato; Funasaki, Yuichi; Fujita, Keisuke; Mori, Atsunori; Nakasuga, Akira; Maruyama, Tatsuo

2017-01-01

Processing and manipulation of highly conductive pristine graphene in large quantities are still major challenges in the practical application of graphene for electric device. In the present study, we report the liquid-phase exfoliation of graphite in toluene using well-defined poly(3-hexylthiophene) (P3HT) to produce a P3HT/graphene composite. We synthesize and use regioregular P3HT with controlled molecular weights as conductive dispersants for graphene. Simple ultrasonication of graphite flakes with the P3HT successfully produces single-layer and few-layer graphene sheets dispersed in toluene. The produced P3HT/graphene composite can be used as conductive graphene ink, indicating that the P3HT/graphene composite has high electrical conductivity owing to the high conductivity of P3HT and graphene. The P3HT/graphene composite also works as an oxidation-resistant and conductive film for a copper substrate, which is due to the high gas-barrier property of graphene.

Rational and practical exfoliation of graphite using well-defined poly(3-hexylthiophene) for the preparation of conductive polymer/graphene composite

PubMed Central

Iguchi, Hiroki; Higashi, Chisato; Funasaki, Yuichi; Fujita, Keisuke; Mori, Atsunori; Nakasuga, Akira; Maruyama, Tatsuo

2017-01-01

Processing and manipulation of highly conductive pristine graphene in large quantities are still major challenges in the practical application of graphene for electric device. In the present study, we report the liquid-phase exfoliation of graphite in toluene using well-defined poly(3-hexylthiophene) (P3HT) to produce a P3HT/graphene composite. We synthesize and use regioregular P3HT with controlled molecular weights as conductive dispersants for graphene. Simple ultrasonication of graphite flakes with the P3HT successfully produces single-layer and few-layer graphene sheets dispersed in toluene. The produced P3HT/graphene composite can be used as conductive graphene ink, indicating that the P3HT/graphene composite has high electrical conductivity owing to the high conductivity of P3HT and graphene. The P3HT/graphene composite also works as an oxidation-resistant and conductive film for a copper substrate, which is due to the high gas-barrier property of graphene. PMID:28059127

Metal Oxide Materials and Collector Efficiency in Electrochemical Supercapacitors

DTIC Science & Technology

2010-12-01

However, even if thick tita - nium films and/or nanostructured layers were obtained using these methods, they were composed of non-conducting titanium...following electrochemical reduction in LiClO4/acetonitrile. Table 1 reports the electrochemical parameters and the atomic composition of the tita - nium

Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Sakai, Shota; Fukuda, Katsutoshi

2018-03-01

We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (˜1 nm) and oxide hole buffer layers improved the open circuit voltage V OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode.

A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

NASA Astrophysics Data System (ADS)

Ghaffari, Majid; Orouji, Ali A.

2018-06-01

Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

In situ chemical synthesis of ruthenium oxide/reduced graphene oxide nanocomposites for electrochemical capacitor applications.

PubMed

Kim, Ji-Young; Kim, Kwang-Heon; Yoon, Seung-Beom; Kim, Hyun-Kyung; Park, Sang-Hoon; Kim, Kwang-Bum

2013-08-07

An in situ chemical synthesis approach has been developed to prepare ruthenium oxide/reduced graphene oxide (RGO) nanocomposites. It is found that as the C/O ratio increases, the number density of RuO2 nanoparticles decreases, because the chemical interaction between the Ru ions and the oxygen-containing functional groups provides anchoring sites where the nucleation of particles takes place. For electrochemical capacitor applications, the microwave-hydrothermal process was carried out to improve the conductivity of RGO in RuO2/RGO nanocomposites. The significant improvement in capacitance and high rate capability might result from the RuO2 nanoparticles used as spacers that make the interior layers of the reduced graphene oxide electrode available for electrolyte access.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

DOE PAGES

Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; ...

2015-03-11

Reactively sputtered nickel oxide (NiO x) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O 2(g). These NiO x coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Finally, under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiO x films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of watermore » to O 2(g).« less

Optimization of Graphene Sensors to Detect Biological Warfare Agents

DTIC Science & Technology

2014-03-27

conductor and a metal at room temperature [53] and in some cases, it acts like a p- type semiconductor [54]. The knowledge of the conductivity ...aptamer functionalized graphene layer interaction was available. Silicon wafers with thermal oxide coats were explored as a next step. The available...picked due to its high electrical conductivity (100,00cm/Vs) and functionalization properties [17]. Figure 1 conceptually represents a graphene-field

Influence of substrate preparation on the shaping of the topography of the surface of nanoceramic oxide layers

NASA Astrophysics Data System (ADS)

Bara, Marek; Kubica, Marek

2014-02-01

The paper discusses the shaping mechanism and changes occurring in the structure and topography of the surface of nanoceramic oxide layers during their formation. The paper presents the influence of substrate preparation on the surface topography of oxide layers. The layers were produced via hard anodizing on the EN AW-5251 aluminum alloy. The layers obtained were subjected to microscope examinations, image and chemical composition analyses, and stereometric examinations. Heredity of substrate properties in the topography of the surface of nanoceramic oxide layers formed as a result of electrochemical oxidation has been shown.

Liquid flow cells having graphene on nitride for microscopy

DOEpatents

Adiga, Vivekananda P.; Dunn, Gabriel; Zettl, Alexander K.; Alivisatos, A. Paul

2016-09-20

This disclosure provides systems, methods, and apparatus related to liquid flow cells for microscopy. In one aspect, a device includes a substrate having a first and a second oxide layer disposed on surfaces of the substrate. A first and a second nitride layer are disposed on the first and second oxide layers, respectively. A cavity is defined in the first oxide layer, the first nitride layer, and the substrate, with the cavity including a third nitride layer disposed on walls of the substrate and the second oxide layer that define the cavity. A channel is defined in the second oxide layer. An inlet port and an outlet port are defined in the second nitride layer and in fluid communication with the channel. A plurality of viewports is defined in the second nitride layer. A first graphene sheet is disposed on the second nitride layer covering the plurality of viewports.

Investigation of Coatings for Langmuir Probes in an Oxygen-Rich Space Environment

NASA Astrophysics Data System (ADS)

Samaniego, J. I.; Wang, X.; Andersson, L.; Malaspina, D.; Ergun, R.; Horanyi, M.

2017-12-01

The surface properties of the Langmuir probes, such as the one on the MAVEN mission, will change after exposure to upper planetary atmospheres where high concentrations of atomic oxygen and other oxidizing compounds are present. TiN (Titanium Nitride) or DAG (a resin based graphite dispersion) are the most common coatings for current Langmuir probes, yet both of these coatings pose issues when exposed to oxygen-rich space environment. TiN showed reduced surface conductivity while the DAG layers erode with exposure to oxygen. It is known that Iridium (Ir) and Rhenium (Rh) are difficult to oxidize and maintain high conductivity even in their oxidized forms, suggesting them to be good candidates for probe coatings. Oxidation of most metals creates a resistive layer on the surface of the probe that will affect the amount of current being collected at a given voltage during the probe sweep and therefore affect the accuracy of plasma parameters determined by the Langmuir probe (e.g. density, temperature). We present the results of the oxidation effect on the current-voltage curves (I-V curves) and therefore the resulting measured plasma parameters of Ir and Rh wire probes compared with other control metals and coatings (Cu, Ni, TiN) in controlled plasma environments. The oxidation process is performed in an oxygen plasma chamber in which both O+ and O2+ are created and accelerated toward the probes with energies < 10 eV. An argon plasma chamber is used to compare the probe's I-V curves before and after the oxidation process. Our preliminary results indicate that iridium shows the least effect of oxidation on the probe measurements. The second objective of this study is to identify methods that can be used in orbit to clean the surface of Langmuir probes to minimize the effect of exposure to oxidizing compounds.

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, V.K.

1990-08-21

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, Vinod K.

1990-01-01

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Influence of a Boron Precursor on the Growth and Optoelectronic Properties of Electrodeposited Zinc Oxide Thin Film.

PubMed

Tsin, Fabien; Thomere, Angélica; Bris, Arthur Le; Collin, Stéphane; Lincot, Daniel; Rousset, Jean

2016-05-18

Highly transparent and conductive materials are required for many industrial applications. One of the interesting features of ZnO is the possibility to dope it using different elements, hence improving its conductivity. Results concerning the zinc oxide thin films electrodeposited in a zinc perchlorate medium containing a boron precursor are presented in this study. The addition of boron to the electrolyte leads to significant effects on the morphology and crystalline structure as well as an evolution of the optical properties of the material. Varying the concentration of boric acid from 0 to 15 mM strongly improves the compactness of the deposit and increases the band gap from 3.33 to 3.45 eV. Investigations were also conducted to estimate and determine the influence of boric acid on the electrical properties of the ZnO layers. As a result, no doping effect effect by boron was demonstrated. However, the role of boric acid on the material quality has also been proven and discussed. Boric acid strongly contributes to the growth of high quality electrodeposited zinc oxide. The high doping level of the film can be attributed to the perchlorate ions introduced in the bath. Finally, a ZnO layer electrodeposited in a boron rich electrolyte was tested as front contact of a Cu(In, Ga)(S, Se)2 based solar cell. An efficiency of 12.5% was measured with a quite high fill factor (>70%) which confirms the high conductivity of the ZnO thin film.

High Temperature Oxidation of Hot-Dip Aluminized T92 Steels

NASA Astrophysics Data System (ADS)

Abro, Muhammad Ali; Hahn, Junhee; Lee, Dong Bok

2018-03-01

The T92 steel plate was hot-dip aluminized, and oxidized in order to characterize the high-temperature oxidation behavior of hot-dip aluminized T92 steel. The coating consisted of Al-rich topcoat with scattered Al3Fe grains, Al3Fe-rich upper alloy layer with scattered (Al, Al5Fe2, AlFe)-grains, and Al5Fe2-rich lower alloy layer with scattered (Al5Fe2, AlFe)-grains. Oxidation at 800 °C for 20 h formed (α-Al2O3 scale)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer), while oxidation at 900 °C for 20 h formed (α-Al2O3 scale plus some Fe2O3)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer) from the surface. During oxidation, outward migration of all substrate elements, inward diffusion of oxygen, and back and forth diffusion of Al occurred according to concentration gradients. Also, diffusion transformed and broadened AlFe and AlFe3 layers dissolved with some oxygen and substrate alloying elements. Hot-dip aluminizing improved the high-temperature oxidation resistance of T92 steel through preferential oxidation of Al at the surface.

High Temperature Oxidation of Hot-Dip Aluminized T92 Steels

NASA Astrophysics Data System (ADS)

Abro, Muhammad Ali; Hahn, Junhee; Lee, Dong Bok

2018-05-01

The T92 steel plate was hot-dip aluminized, and oxidized in order to characterize the high-temperature oxidation behavior of hot-dip aluminized T92 steel. The coating consisted of Al-rich topcoat with scattered Al3Fe grains, Al3Fe-rich upper alloy layer with scattered (Al, Al5Fe2, AlFe)-grains, and Al5Fe2-rich lower alloy layer with scattered (Al5Fe2, AlFe)-grains. Oxidation at 800 °C for 20 h formed (α-Al2O3 scale)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer), while oxidation at 900 °C for 20 h formed (α-Al2O3 scale plus some Fe2O3)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer) from the surface. During oxidation, outward migration of all substrate elements, inward diffusion of oxygen, and back and forth diffusion of Al occurred according to concentration gradients. Also, diffusion transformed and broadened AlFe and AlFe3 layers dissolved with some oxygen and substrate alloying elements. Hot-dip aluminizing improved the high-temperature oxidation resistance of T92 steel through preferential oxidation of Al at the surface.

Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

DOE PAGES

Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; ...

2015-04-02

Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the depositedmore » AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.« less

Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng

Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the depositedmore » AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.« less

Plasma Oxidation Of Silver And Zinc In Low-Emissivity Stacks

NASA Astrophysics Data System (ADS)

Ross, R. C.; Sherman, R.,; Bunger, R. A.; Nadel, S. J.

1987-11-01

The oxidation of silver and zinc films was studied by exposing metallic films to low-power 02 plasmas and analyzing the reacted films. This type of oxidation is an important phenomenon near the barrier layer in sputter-deposited metal-oxide/Ag/metal-oxide low-emissivity (low-e) coatings. Barrier layers generally are deposited on the Ag layer to prevent its degradation during subsequent 02 reactive sputtering. Both individual layers and complete stacks were studied. In addition, the thermal stability of plasma-oxidized Ag was examined. There are several important findings for the individual layers. Ag oxidizes rapidly in the plasma, forming Ag≍1.70 after complete reaction. Relative to the original Ag, the 9ide has -l.7 times greater thick-ness, >10 times higher electrical resistiv-ity (p), and increased surface roughness. Zn oxidizes slowly, at only -1% to 0.1% times the rate for Ag, and is thus more difficult to characterize. The results for individual layers are discussed as they relate to practical pro-perties of low-e stacks: the difficulty of obtaining complete barrier layer oxidation without partially degrading the Ag layer as well as the effects of heat treatment and aging.

Decoupling the refractive index from the electrical properties of transparent conducting oxides via periodic superlattices

PubMed Central

Caffrey, David; Norton, Emma; Coileáin, Cormac Ó; Smith, Christopher M.; Bulfin, Brendan; Farrell, Leo; Shvets, Igor V.; Fleischer, Karsten

2016-01-01

We demonstrate an alternative approach to tuning the refractive index of materials. Current methodologies for tuning the refractive index of a material often result in undesirable changes to the structural or optoelectronic properties. By artificially layering a transparent conducting oxide with a lower refractive index material the overall film retains a desirable conductivity and mobility while acting optically as an effective medium with a modified refractive index. Calculations indicate that, with our refractive index change of 0.2, a significant reduction of reflective losses could be obtained by the utilisation of these structures in optoelectronic devices. Beyond this, periodic superlattice structures present a solution to decouple physical properties where the underlying electronic interaction is governed by different length scales. PMID:27623228

Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

1994-01-01

The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

Instabilities of thin layers of conducting fluids produced by time dependent magnetic fields

NASA Astrophysics Data System (ADS)

Burguete, Javier

2011-11-01

We present the recent results of an experiment where thin layers of conducting fluids are forced by time-dependent magnetic fields perpendicular to their surface. We use as conducting fluid an In-Ga-Sn alloy, immersed in a 5% hydrocloric acid solution to prevent oxidation. The conducting layers have a circular shape, and are placed inside a set-up that produces the vertical magnetic field. Due to MHD effects, the competition between the Lorentz force and gravity triggers an instability of the free surface. The shape of this surface can adopt many different configurations, with a very rich dynamics, presenting azimuthal wave numbers between 3 and 8 for the explored parameters. The magnetic field evolves harmonically with a frequency up to 10Hz, small enough to not to observe skin depth effects and with a magnitude up to 0.1 T. Different resonant regions have been observed, for narrow windows of the forcing frequency. We have analysed the existence of thresholds for these instabilities, depending on the wave number and experimental parameters. These results are compared with others present in the literature.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2013-10-22

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2015-04-28

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2014-09-16

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Multilayered Si nanoparticle/reduced graphene oxide hybrid as a high-performance lithium-ion battery anode.

PubMed

Chang, Jingbo; Huang, Xingkang; Zhou, Guihua; Cui, Shumao; Hallac, Peter B; Jiang, Junwei; Hurley, Patrick T; Chen, Junhong

2014-02-01

Multilayered Si/RGO anode nanostructures, featuring alternating Si nanoparticle (NP) and RGO layers, good mechanical stability, and high electrical conductivity, allow Si NPs to easily expand between RGO layers, thereby leading to high reversible capacity up to 2300 mAh g(-1) at 0.05 C (120 mA g(-1) ) and 87% capacity retention (up to 630 mAh g(-1) ) at 10 C after 152 cycles. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

PubMed Central

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Abstract Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlOx), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers. PMID:28634499

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

PubMed

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co{sub 50}Fe{sub 50} magnetic layer and In-Zn-O conductive oxide spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakatani, T. M., E-mail: Tomoya.Nakatani@hgst.com; Childress, J. R.

2015-06-28

We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co{sub 50}Fe{sub 50}/IZO/Co{sub 50}Fe{sub 50} trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm{sup 2}, significantly larger than all-metal structures with Ag or Cu spacers (∼40 mΩ μm{sup 2}). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5–6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm{sup 2}, were obtained. The values of ΔRA with the IZO spacers and Co{sub 50}Fe{sub 50} magnetic layers were significantly larger than thosemore » with conventional metal spacers and Co{sub 50}Fe{sub 50} magnetic layers (∼1–2 mΩ μm{sup 2}). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co{sub 50}Fe{sub 50}/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.« less

Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices.

PubMed

Black, Jennifer M; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T; Noh, Joo Hyon; Pudasaini, Pushpa R; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V; Rack, Philip D; Ward, Thomas Zac; Feng, Guang; Balke, Nina

2017-11-22

Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

DOE PAGES

Black, Jennifer M.; Come, Jeremy; Bi, Sheng; ...

2017-10-24

Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment andmore » theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.« less

Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Jennifer M.; Come, Jeremy; Bi, Sheng

Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment andmore » theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.« less

Graphene electrode modified with electrochemically reduced graphene oxide for label-free DNA detection.

PubMed

Li, Bing; Pan, Genhua; Avent, Neil D; Lowry, Roy B; Madgett, Tracey E; Waines, Paul L

2015-10-15

A novel printed graphene electrode modified with electrochemically reduced graphene oxide was developed for the detection of a specific oligonucleotide sequence. The graphene oxide was immobilized onto the surface of a graphene electrode via π-π bonds and electrochemical reduction of graphene oxide was achieved by cyclic voltammetry. A much higher redox current was observed from the reduced graphene oxide-graphene double-layer electrode, a 42% and 36.7% increase, respectively, in comparison with that of a bare printed graphene or reduced graphene oxide electrode. The good electron transfer activity is attributed to a combination of the large number of electroactive sites in reduced graphene oxide and the high conductivity nature of graphene. The probe ssDNA was further immobilized onto the surface of the reduced graphene oxide-graphene double-layer electrode via π-π bonds and then hybridized with its target cDNA. The change of peak current due to the hybridized dsDNA could be used for quantitative sensing of DNA concentration. It has been demonstrated that a linear range from 10(-7)M to 10(-12)M is achievable for the detection of human immunodeficiency virus 1 gene with a detection limit of 1.58 × 10(-13)M as determined by three times standard deviation of zero DNA concentration. Copyright © 2015 Elsevier B.V. All rights reserved.

Leaching of Zinc Sulfide by Thiobacillus ferrooxidans: Bacterial Oxidation of the Sulfur Product Layer Increases the Rate of Zinc Sulfide Dissolution at High Concentrations of Ferrous Ions

PubMed Central

Fowler, T. A.; Crundwell, F. K.

1999-01-01

This paper reports the results of leaching experiments conducted with and without Thiobacillus ferrooxidans at the same conditions in solution. The extent of leaching of ZnS with bacteria is significantly higher than that without bacteria at high concentrations of ferrous ions. A porous layer of elemental sulfur is present on the surfaces of the chemically leached particles, while no sulfur is present on the surfaces of the bacterially leached particles. The analysis of the data using the shrinking-core model shows that the chemical leaching of ZnS is limited by the diffusion of ferrous ions through the sulfur product layer at high concentrations of ferrous ions. The analysis of the data shows that diffusion through the product layer does not limit the rate of dissolution when bacteria are present. This suggests that the action of T. ferrooxidans in oxidizing the sulfur formed on the particle surface is to remove the barrier to diffusion by ferrous ions. PMID:10583978

Effect of CrO3 Sealing Time on Anodized A12024-T3

NASA Astrophysics Data System (ADS)

Korda, Akhmad A.; Hidayat, R. Z.

2016-08-01

The effect of CrO3 sealing time on anodized aluminum alloy has been investigated. A1 2024-T3 were used as substrate. Anodizing was carried out using chromic acid. CrO3 sealing was conducted in CrO3 solution for 30, 60, 90, 120 and 150 minutes. As comparison, other specimens were also prepared as anodized and boiled water sealing. Thickness of the coating was observed by optical microscope. Anodized and sealing layer was analyzed by X- ray diffraction. The hardness of as anodized, boiled water sealing and CrO3 sealing were compared. The highest hardness is achieved by CrO3 sealed specimen and followed by boiled water sealing and as anodized specimens. The longer the processes of CrO3 sealing the higher layer thickness and therefore the higher hardness of the oxide layer. The best resistance to electrolyte penetration is achieved by the CrO3 sealed specimen followed by boiled water sealed and as anodized specimens. The higher thickness of oxide layer, the higher the resistance against electrolyte penetration.

Lithium Nitride Synthesized by in situ Lithium Deposition and Ion Implantation for Boron Neutron Capture Therapy

NASA Astrophysics Data System (ADS)

Ishitama, Shintaro; Baba, Yuji; Fujii, Ryo; Nakamura, Masaru; Imahori, Yoshio

Li3N synthesis on Li deposition layer was conducted without H2O and O2 by in situ lithium deposition in high vacuum chamber of 10-6 Pa and ion implantation techniques and the thermo-chemical stability of the Li3N/Li/Cu tri-layered target for Boron Neutron Capture Therapy (BNCT) under laser heating and air exposure was characterized by X-ray photoelectron spectroscopy (XPS). Following conclusions were derived; (1) Li3N/Li/Cu tri-layered target with very low oxide and carbon contamination was synthesized by in situ lithium vacuum deposition and N2+ ion implantation without H2O and O2 additions, (2) The starting temperature of evaporation of Li3N/Li/Cu tri-layered target increased by 120K compared to that of the Li/Cu target and (3) Remarkable oxidation and carbon contamination were observed on the surface of Li3N/Li/Cu after air exposure and these contaminated compositions was not removed by Ar+ heavy sputtering.

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

PubMed Central

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

2015-01-01

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance. PMID:26080437

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

DOE PAGES

Zhou, Nanjia; Kim, Myung -Gil; Loser, Stephen; ...

2015-06-15

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactivemore » materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.« less

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

PubMed

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

2015-06-30

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

Hydrogen pickup mechanism of zirconium alloys

NASA Astrophysics Data System (ADS)

Couet, Adrien

Although the optimization of zirconium based alloys has led to significant improvements in hydrogen pickup and corrosion resistance, the mechanisms by which such alloy improvements occur are still not well understood. In an effort to understand such mechanisms, a systematic study of the alloy effect on hydrogen pickup is conducted, using advanced characterization techniques to rationalize precise measurements of hydrogen pickup. The hydrogen pick-up fraction is accurately measured for a specially designed set of commercial and model alloys to investigate the effects of alloying elements, microstructure and corrosion kinetics on hydrogen uptake. Two different techniques to measure hydrogen concentrations were used: a destructive technique, Vacuum Hot Extraction, and a non-destructive one, Cold Neutron Prompt Gamma Activation Analysis. The results indicate that hydrogen pickup varies not only from alloy to alloy but also during the corrosion process for a given alloy. For instance Zircaloy type alloys show high hydrogen pickup fraction and sub-parabolic oxidation kinetics whereas ZrNb alloys show lower hydrogen pickup fraction and close to parabolic oxidation kinetics. Hypothesis is made that hydrogen pickup result from the need to balance charge during the corrosion reaction, such that the pickup of hydrogen is directly related to (and indivisible of) the corrosion mechanism and decreases when the rate of electron transport or oxide electronic conductivity sigmao xe through the protective oxide increases. According to this hypothesis, alloying elements (either in solid solution or in precipitates) embedded in the oxide as well as space charge variations in the oxide would impact the hydrogen pick-up fraction by modifying sigmaox e, which drives oxidation and hydriding kinetics. Dedicated experiments and modelling were performed to assess and validate these hypotheses. In-situ electrochemical impedance spectroscopy (EIS) experiments were performed on Zircaloy-4 tubes to directly measure the evolution of sigma oxe as function of exposure time. The results show that sigmao xe decreases as function of exposure time and that its variations are directly correlated to the instantaneous hydrogen pickup fraction variations. The electron transport through the oxide layer is thus altered as the oxide grows, reasons for which are yet to be exactly determined. Preliminary results also show that sigma oxe of ZrNb alloys would be much higher compared with Zircaloy-4. Thus, it is confirmed that sigmaox e is a key parameter in the hydrogen and oxidation mechanism. Because the mechanism whereby alloying elements are incorporated into the oxide layer is critical to changing sigmao xe, the evolution of the oxidation state of two common alloying elements, Fe and Nb, when incorporated into the growing oxide layers is investigated using X-Ray Absorption Near-Edge Spectroscopy (XANES) using micro-beam synchrotron radiation on cross sectional oxide samples. The results show that the oxidation of both Fe and Nb is delayed in the oxide layer compared to that of Zr, and that this oxidation delay is related to the variations of the instantaneous hydrogen pick-up fraction with exposure time. The evolution of Nb oxidation as function of oxide depth is also compatible with space charge compensation in the oxide and with an increase in sigmaox e of ZrNb alloys compared to Zircaloys. Finally, various successively complex models from the well-known Wagner oxidation theory to the more complex effect of space charge on oxidation kinetics have been developed. The general purpose of the modeling effort is to provide a rationale for the sub-parabolic oxidation kinetics and demonstrate the correlation with hydrogen pickup fraction. It is directly demonstrated that parabolic oxidation kinetics is associated with high sigmao xe and low space charges in the oxide whereas sub-parabolic oxidation kinetics is associated with lower sigmaox e and higher space charge in the oxide. All these observations helped us to propose a general corrosion mechanism of zirconium alloys involving both oxidation and hydrogen pickup mechanism to better understand and predict the effect of alloying additions on the behavior of zirconium alloys.

Polyethylene glycol assisted growth of Sn-doped ZnO nanorod arrays prepared via sol-gel immersion method

NASA Astrophysics Data System (ADS)

Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.

2018-05-01

Tin-doped zinc oxide (SZO) nanorod films at different concentrations of polyethylene glycol (PEG) were successfully deposited on zinc oxide (ZnO) seeded layer catalyst using sol-gel immersion method. The morphology of the samples were characterized using field emission scanning electron microscopy (FESEM), optical properties using UV-Vis spectrophotometer and electrical properties using I-V measurement system. The current-voltage (I-V) characteristics displayed that 5 wt % sample produced the highest conductivity.

Summary of aircraft results for 1978 southeastern Virginia urban plume measurement study of ozone, nitrogen oxides, and methane

NASA Technical Reports Server (NTRS)

Gregory, G. L.; Wornom, D. E.; Mathis, J. J., Jr.; Sebacher, D. I.

1980-01-01

Ozone production was determined from aircraft and surface in situ measurements, as well as from an airborne laser absorption spectrometer. Three aircraft and approximately 10 surface stations provided air-quality data. Extensive meteorological, mixing-layer-height, and ozone-precursor data were also measured. Approximately 50 hrs (9 flight days) of data from the aircraft equipped to monitor ozone, nitrogen oxides, dewpoint temperature, and temperature are presented. In addition, each experiment conducted is discussed.

Highly Strong and Elastic Graphene Fibres Prepared from Universal Graphene Oxide Precursors

PubMed Central

Huang, Guoji; Hou, Chengyi; Shao, Yuanlong; Wang, Hongzhi; Zhang, Qinghong; Li, Yaogang; Zhu, Meifang

2014-01-01

Graphene fibres are continuously prepared from universal graphene oxide precursors by a novel hydrogel-assisted spinning method. With assistance of a rolling process, meters of ribbon-like GFs, or GRs with improved conductivity, tensile strength, and a long-range ordered compact layer structure are successfully obtained. Furthermore, we refined our spinning process to obtained elastic GRs with a mixing microstructure and exceptional elasticity, which may provide a platform for electronic skins and wearable electronics, sensors, and energy devices. PMID:24576869

Ultraviolet electroluminescence from zinc oxide nanorods/deoxyribonucleic acid hybrid bio light-emitting diode

NASA Astrophysics Data System (ADS)

Gupta, Rohini Bhardwaj; Nagpal, Swati; Arora, Swati; Bhatnagar, Pramod Kumar; Mathur, Parmatma Chandra

2011-01-01

Ultraviolet (UV) light-emitting diode using salmon deoxyribonucleic acid (sDNA)-cetyltrimethylammonium complex as an electron blocking layer and zinc oxide (ZnO) nanorods as emissive material was fabricated. UV emission, which was blue shifted up to 335 nm with respect to the band edge emission of 390 nm, was observed. This blue shift was caused due to accumulation of electrons in the conduction band of ZnO because of a high potential barrier existing at the sDNA/ZnO interface.

Robust, functional nanocrystal solids by infilling with atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yao; Gibbs, Markelle; Perkins, Craig L.

2011-12-14

Thin films of colloidal semiconductor nanocrystals (NCs) are inherently metatstable materials prone to oxidative and photothermal degradation driven by their large surface-to-volume ratios and high surface energies. The fabrication of practical electronic devices based on NC solids hinges on preventing oxidation, surface diffusion, ripening, sintering, and other unwanted physicochemical changes that can plague these materials. Here we use low-temperature atomic layer deposition (ALD) to infill conductive PbSe NC solids with metal oxides to produce inorganic nanocomposites in which the NCs are locked in place and protected against oxidative and photothermal damage. Infilling NC field-effect transistors and solar cells with amorphousmore » alumina yields devices that operate with enhanced and stable performance for at least months in air. Furthermore, ALD infilling with ZnO lowers the height of the inter-NC tunnel barrier for electron transport, yielding PbSe NC films with electron mobilities of 1 cm² V -1 s -1. Our ALD technique is a versatile means to fabricate robust NC solids for optoelectronic devices.« less

Microstructure investigations of U3Si2 implanted by high-energy Xe ions at 600 °C

NASA Astrophysics Data System (ADS)

Miao, Yinbin; Harp, Jason; Mo, Kun; Kim, Yeon Soo; Zhu, Shaofei; Yacout, Abdellatif M.

2018-05-01

The microstructure investigations on a high-energy Xe-implanted U3Si2 pellet were performed. The promising accident tolerant fuel (ATF) candidate, U3Si2, was irradiated by 84 MeV Xe ions at 600 °C at Argonne Tandem Linac Accelerator System (ATLAS). The characterizations of the Xe implanted sample were conducted using advanced transmission electron microscopy (TEM) techniques. An oxidation layer was observed on the sample surface after irradiation under the ∼10-5 Pa vacuum. The study on the oxidation layer not only unveils the readily oxidation behavior of U3Si2 under high-temperature irradiation conditions, but also develops an understanding of its oxidation mechanism. Intragranular Xe bubbles with bimodal size distribution were observed within the Xe deposition region of the sample induced by 84 MeV Xe ion implantation. At the irradiation temperature of 600 °C, the gaseous swelling strain contributed by intragranular bubbles was found to be insignificant, indicating an acceptable fission gas behavior of U3Si2 as a light water reactor (LWR) fuel operating at such a temperature.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

PubMed

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

PubMed Central

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A.; Anthopoulos, Thomas D.

2017-01-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications. PMID:28435867

Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de; Nagel, Robin; Albes, Tim

2016-04-14

Highly-ordered, sub-70 nm-MOS-junctions of Au/Ti/TiO{sub x}/p{sup +}-Si were efficiently and reliably fabricated by nanotransfer-printing (nTP) over large areas and their functionality was investigated with respect to their application as MOS-devices. First, we used a temperature-enhanced nTP process and integrated the plasma-oxidation of a nm-thin titanium film being e-beam evaporated directly on the stamp before the printing step without affecting the p{sup +}-Si substrate. Second, morphological investigations (scanning electron microscopy) of the nanostructures confirm the reliable transfer of Au/Ti/TiO{sub x}-pillars of 50 nm, 75 nm, and 100 nm size of superior quality on p{sup +}-Si by our transfer protocol. Third, the fabricated nanodevices are alsomore » characterized electrically by conductive AFM. Fourth, the results are compared to probe station measurements on identically processed, i.e., transfer-printed μm-MOS-structures including a systematic investigation of the oxide formation. The jV-characteristics of these MOS-junctions demonstrate the electrical functionality as plasma-grown tunneling oxides and the effectivity of the transfer-printing process for their large-scale fabrication. Next, our findings are supported by fits to the jV-curves of the plasma-grown titanium oxide by kinetic-Monte-Carlo simulations. These fits allowed us to determine the dominant conduction mechanisms, the material parameters of the oxides and, in particular, a calibration of the thickness depending on applied plasma time and power. Finally, also a relative dielectric permittivity of 12 was found for such plasma-grown TiO{sub x}-layers.« less

Study of the effects of gaseous environments on sulfidation attack of superalloys

NASA Technical Reports Server (NTRS)

Smeggil, J. G.; Bornstein, N. S.

1977-01-01

Studies were conducted to examine the effect of the gaseous corrodents NaCl, HCl, and NaOH on the high temperature oxidation and Na2SO4-induced corrosion behavior of the alumina former NiAl, the chromia former Ni-25 wt.% Cr, elemental Cr, and the superalloy B-1900. Experiments were conducted at 900 and 1050 C in air in the presence and absence of the gaseous corrodents. Effects involving both reaction rates and microstructural changes in oxide morphology were observed due to the presence of these corrodents at levels anticipated to be present in operating industrial and marine gas turbines. The effect of gaseous NaCl, HCl, and possibly NaOH on NiAl in simple oxidation was to remove aluminum from below the protective alumina layer and to simultaneously weaken the adherence of the protective alumina oxide scale to the substrate. The aluminum removed from below the oxide scale was redeposited on its surface as alpha-Al2O3 whiskers. With respect to the chromia formers, gaseous NaCl and HCl promoted breakaway oxidation kinetics and changes in the microstructures of the oxide scales.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Oxide-free aC/Zr0.65Al0.075Cu0.275/aC phase plates for transmission electron microscopy.

PubMed

Dries, M; Obermair, M; Hettler, S; Hermann, P; Seemann, K; Seifried, F; Ulrich, S; Fischer, R; Gerthsen, D

2018-06-01

Thin-film phase plates (PP) have become a valuable tool for the imaging of organic objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon (aC), which undergoes rapid aging under intense illumination with high-energy electrons. The limited lifetime of aC film PPs calls for alternative PP materials with improved material stability. This work presents thin-film PPs fabricated from the metallic glass alloy Zr 0.65 Al 0.075 Cu 0.275 (ZAC), which was identified as a promising PP material with beneficial properties, such as a large inelastic mean free path. An adverse effect of the ZAC alloy is the formation of a surface oxide layer in ambient air, which reduces the electrical conductivity and causes electrostatic charging in the electron beam. To avoid surface oxidation, the ZAC alloy is enclosed by thin aC layers. The resulting aC/ZAC/aC layer system is used to fabricate Zernike and Hilbert PPs. Phase-contrast TEM imaging is demonstrated for a sample of carbon nanotubes, which show strong contrast enhancement in PP TEM images. Copyright © 2018 Elsevier B.V. All rights reserved.

Graphene Oxide by UV-Ozone Treatment as an Efficient Hole Extraction Layer for Highly Efficient and Stable Polymer Solar Cells.

PubMed

Xia, Yingdong; Pan, Yufeng; Zhang, Haijuan; Qiu, Jian; Zheng, Yiting; Chen, Yonghua; Huang, Wei

2017-08-09

The hole extraction layer has a significant impact on the achievement of high-efficiency polymer solar cells (PSCs). Here, we report an efficient approach to direct UV-ozone treatment by larger device performance enhancement employing graphene oxide (GO). The dramatic performance enhancement of PSCs with the P3HT:PCBM blend as an active layer was demonstrated by the UV-ozone treatment of GO for 30 min: best power conversion efficiency (PCE) of 4.18%, fill factor of 0.63, J sc of 10.94 mA cm -2 , and V oc of 0.61 V, which are significantly higher than those of the untreated GO (1.82%) and highly comparable PEDOT:PSS-based PSCs (3.73%). In addition, PSCs with UV-ozone-treated GO showed a longer stability than PSCs with PEDOT:PSS. The significant enhancement of PCEs of PSCs can be attributed to the fact that ozone molecules can oxidize GO into CO 2 and leave highly conductive graphene particles. We suggest that this simple UV-ozone treatment can provide an efficient method for highly efficient GO hole extraction in high-performance PSCs.

Bilayered Oxide thin films for transparent electrode application

NASA Astrophysics Data System (ADS)

Dutta, Titas; Narayan, Jagdish

2008-10-01

Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

Perovskite Solar Cells for High-Efficiency Tandems

DOE Office of Scientific and Technical Information (OSTI.GOV)

McGehee, Michael; Buonassisi, Tonio

The first monolithic perovskite/silicon tandem was made with a diffused silicon p-n junction, a tunnel junction made of n ++ hydrogenated amorphous silicon, a titania electron transport layer, a methylammonium lead iodide absorber, and a Spiro-OMeTAD hole transport layer (HTL). The power conversion efficiency (PCE) was only 13.7% due to excessive parasitic absorption of light in the HTL, limiting the matched current density to 11.5 mA/cm 2. Werner et al. 15 raised the PCE to a record 21.2% by switching to a silicon heterojunction bottom cell and carefully tuning layer thicknesses to achieve lower optical loss and a higher currentmore » density of 15.9 mA/cm 2. It is clear from these reports that minimizing parasitic absorption in the window layers is crucial to achieving higher current densities and efficiencies in monolithic tandems. To this end, the window layers through which light first passes before entering the perovskite and silicon absorber materials must be highly transparent. The front electrode must also be conductive to carry current laterally across the top of the device. Indium tin oxide (ITO) is widely utilized as a transparent electrode in optoelectronic devices such as flat-panel displays, smart windows, organic light-emitting diodes, and solar cells due to its high conductivity and broadband transparency. ITO is typically deposited through magnetron sputtering; however, the high kinetic energy of sputtered particles can damage underlying layers. In perovskite solar cells, a sputter buffer layer is required to protect the perovskite and organic carrier extraction layers from damage during sputter deposition. The ideal buffer layer should also be energetically well aligned so as to act as a carrier-selective contact, have a wide bandgap to enable high optical transmission, and have no reaction with the halides in the perovskite. Additionally, this buffer layer should act as a diffusion barrier layer to prevent both organic cation evolution and moisture penetration to overcome the often-reported thermal and environmental instability of metal halide perovskites. Previous perovskite-containing tandems utilized molybdenum oxide (MoO x) as a sputter buffer layer, but this has raised concerns over long-term stability, as the iodide in the perovskite can chemically react with MoO x. Mixed-cation perovskite solar cells have consistently outperformed their single-cation counterparts. The first perovskite device to exceed 20% PCE was fabricated with a mixture of methylammonium (MA) and formamidinium (FA). Recent reports have shown promising results with the introduction of cesium mixtures, enabling high efficiencies with improved photo-, moisture, and thermal stability. The increased moisture and thermal stability are especially important as they broaden the parameter space for processing on top of the perovskite, enabling the deposition of metal oxide contacts through atomic layer deposition (ALD) or chemical vapor deposition (CVD) that may require elevated temperatures or water as a counter reagent. Both titanium dioxide (TiO 2) and tin oxide (SnO 2) have consistently proven to be effective electron-selective contacts for perovskite solar cells and both can be deposited via ALD at temperatures below 150 °C. We introduced a bilayer of SnO 2 and zinc tin oxide (ZTO) that can be deposited by either low-temperature ALD or pulsed-CVD as a window layer with minimal parasitic absorption, efficient electron extraction, and sufficient buffer properties to prevent the organic and perovskite layers from damage during the subsequent sputter deposition of a transparent ITO electrode. We explored pulsed-CVD as a modified ALD process with a continual, rather than purely step-wise, growth component in order to considerably reduce the process time of the SnO 2 deposition process and minimize potential perovskite degradation. These layers, when used in an excellent mixed-cation perovskite solar cell atop a silicon solar cell tuned to the infrared spectrum, enable highly efficient perovskite-silicon tandem solar cells with enhanced thermal and environmental stability.« less

Ion irradiation of the native oxide/silicon surface increases the thermal boundary conductance across aluminum/silicon interfaces

NASA Astrophysics Data System (ADS)

Gorham, Caroline S.; Hattar, Khalid; Cheaito, Ramez; Duda, John C.; Gaskins, John T.; Beechem, Thomas E.; Ihlefeld, Jon F.; Biedermann, Laura B.; Piekos, Edward S.; Medlin, Douglas L.; Hopkins, Patrick E.

2014-07-01

The thermal boundary conductance across solid-solid interfaces can be affected by the physical properties of the solid boundary. Atomic composition, disorder, and bonding between materials can result in large deviations in the phonon scattering mechanisms contributing to thermal boundary conductance. Theoretical and computational studies have suggested that the mixing of atoms around an interface can lead to an increase in thermal boundary conductance by creating a region with an average vibrational spectra of the two materials forming the interface. In this paper, we experimentally demonstrate that ion irradiation and subsequent modification of atoms at solid surfaces can increase the thermal boundary conductance across solid interfaces due to a change in the acoustic impedance of the surface. We measure the thermal boundary conductance between thin aluminum films and silicon substrates with native silicon dioxide layers that have been subjected to proton irradiation and post-irradiation surface cleaning procedures. The thermal boundary conductance across the Al/native oxide/Si interfacial region increases with an increase in proton dose. Supported with statistical simulations, we hypothesize that ion beam mixing of the native oxide and silicon substrate within ˜2.2nm of the silicon surface results in the observed increase in thermal boundary conductance. This ion mixing leads to the spatial gradation of the silicon native oxide into the silicon substrate, which alters the acoustic impedance and vibrational characteristics at the interface of the aluminum film and native oxide/silicon substrate. We confirm this assertion with picosecond acoustic analyses. Our results demonstrate that under specific conditions, a "more disordered and defected" interfacial region can have a lower resistance than a more "perfect" interface.

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

NASA Astrophysics Data System (ADS)

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-07-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

Method for Making a Fuel Cell from a Solid Oxide Monolithic Framework

NASA Technical Reports Server (NTRS)

Sofie, Stephen W. (Inventor); Cable, Thomas L. (Inventor)

2014-01-01

The invention is a novel solid oxide fuel cell (SOFC) stack comprising individual bi-electrode supported fuel cells in which a thin electrolyte is supported between electrodes of essentially equal thickness. Individual cell units are made from graded pore ceramic tape that has been created by the freeze cast method followed by freeze drying. Each piece of graded pore tape later becomes a graded pore electrode scaffold that subsequent to sintering, is made into either an anode or a cathode by means of appropriate solution and thermal treatment means. Each cell unit is assembled by depositing of a thin coating of ion conducting ceramic material upon the side of each of two pieces of tape surface having the smallest pore openings, and then mating the coated surfaces to create an unsintered electrode scaffold pair sandwiching an electrolyte layer. The opposing major outer exposed surfaces of each cell unit is given a thin coating of electrically conductive ceramic, and multiple cell units are stacked, or built up by stacking of individual cell layers, to create an unsintered fuel cell stack. Ceramic or glass edge seals are installed to create flow channels for fuel and air. The cell stack with edge sealants is then sintered into a ceramic monolithic framework. Said solution and thermal treatments means convert the electrode scaffolds into anodes and cathodes. The thin layers of electrically conductive ceramic become the interconnects in the assembled stack.

Removal of Cu(II) ions from contaminated waters using a conducting microfiltration membrane.

PubMed

Wang, Xueye; Wang, Zhiwei; Chen, Haiqin; Wu, Zhichao

2017-10-05

Efficient removal of toxic metals using low-pressure membrane processes from contaminated waters is an important but challenging task. In the present work, a conducting microfiltration membrane prepared by embedding a stainless steel mesh in the active layer of a polyvinylidene fluoride membrane is developed to remove Cu(II) ions from contaminated waters. Results showed that the conducting membrane had favorable electrochemical properties and stability as cathode. Batch tests showed that Cu(II) removal efficiency increased with the increase of voltages and leveled off with the further enhancement of electric field. The optimal voltages were determined to be 1.0V and 2.0V for the influent Cu(II) concentrations of 5mg/L and 30mg/L, respectively. X-ray photoelectron spectroscopy and X-ray diffraction results demonstrated the presence of Cu(0) and Cu(OH) 2 on the membrane surface. The removal mechanisms involved the intrinsic adsorption of membrane, electrosorption of membrane, adsorption of deposited layer, chemical precipitation of Cu(OH) 2 and deposition of Cu(0) which were aided by electrophoresis and electrochemical oxidation-reduction. Long-term tests showed that the major contributors for Cu(II) removal were the deposition of Cu(0) by electrochemical reduction-oxidation (47.3%±8.5%) and chemical precipitation (41.1%±0.2%), followed by electrosorption, adsorption by the fouling layer and membrane intrinsic sorption. Copyright © 2017 Elsevier B.V. All rights reserved.

Method for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Triple-conducting layered perovskites as cathode materials for proton-conducting solid oxide fuel cells.

PubMed

Kim, Junyoung; Sengodan, Sivaprakash; Kwon, Goeun; Ding, Dong; Shin, Jeeyoung; Liu, Meilin; Kim, Guntae

2014-10-01

We report on an excellent anode-supported H(+) -SOFC material system using a triple conducting (H(+) /O(2-) /e(-) ) oxide (TCO) as a cathode material for H(+) -SOFCs. Generally, mixed ionic (O(2-) ) and electronic conductors (MIECs) have been selected as the cathode material of H(+) -SOFCs. In an H(+) -SOFC system, however, MIEC cathodes limit the electrochemically active sites to the interface between the proton conducting electrolyte and the cathode. New approaches to the tailoring of cathode materials for H(+) -SOFCs should therefore be considered. TCOs can effectively extend the electrochemically active sites from the interface between the cathode and the electrolyte to the entire surface of the cathode. The electrochemical performance of NBSCF/BZCYYb/BZCYYb-NiO shows excellent long term stability for 500 h at 1023 K with high power density of 1.61 W cm(-2) . © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Defect-Rich Dopant-Free ZrO2 Nanostructures with Superior Dilute Ferromagnetic Semiconductor Properties.

PubMed

Rahman, Md Anisur; Rout, S; Thomas, Joseph P; McGillivray, Donald; Leung, Kam Tong

2016-09-14

Control of the spin degree of freedom of an electron has brought about a new era in spin-based applications, particularly spin-based electronics, with the potential to outperform the traditional charge-based semiconductor technology for data storage and information processing. However, the realization of functional spin-based devices for information processing remains elusive due to several fundamental challenges such as the low Curie temperature of group III-V and II-VI semiconductors (<200 K), and the low spin-injection efficiencies of existing III-V, II-VI, and transparent conductive oxide semiconductors in a multilayer device structure, which are caused by precipitation and migration of dopants from the host layer to the adjacent layers. Here, we use catalyst-assisted pulsed laser deposition to grow, for the first time, oxygen vacancy defect-rich, dopant-free ZrO2 nanostructures with high TC (700 K) and high magnetization (5.9 emu/g). The observed magnetization is significantly greater than both doped and defect-rich transparent conductive oxide nanomaterials reported to date. We also provide the first experimental evidence that it is the amounts and types of oxygen vacancy defects in, and not the phase of ZrO2 that control the ferromagnetic order in undoped ZrO2 nanostructures. To explain the origin of ferromagnetism in these ZrO2 nanostructures, we hypothesize a new defect-induced bound polaron model, which is generally applicable to other defect-rich, dopant-free transparent conductive oxide nanostructures. These results provide new insights into magnetic ordering in undoped dilute ferromagnetic semiconductor oxides and contribute to the design of exotic magnetic and novel multifunctional materials.

Towards nanometer-spaced silicon contacts to proteins

NASA Astrophysics Data System (ADS)

Schukfeh, Muhammed I.; Sepunaru, Lior; Behr, Pascal; Li, Wenjie; Pecht, Israel; Sheves, Mordechai; Cahen, David; Tornow, Marc

2016-03-01

A vertical nanogap device (VND) structure comprising all-silicon contacts as electrodes for the investigation of electronic transport processes in bioelectronic systems is reported. Devices were fabricated from silicon-on-insulator substrates whose buried oxide (SiO2) layer of a few nanometers in thickness is embedded within two highly doped single crystalline silicon layers. Individual VNDs were fabricated by standard photolithography and a combination of anisotropic and selective wet etching techniques, resulting in p+ silicon contacts, vertically separated by 4 or 8 nm, depending on the chosen buried oxide thickness. The buried oxide was selectively recess-etched with buffered hydrofluoric acid, exposing a nanogap. For verification of the devices’ electrical functionality, gold nanoparticles were successfully trapped onto the nanogap electrodes’ edges using AC dielectrophoresis. Subsequently, the suitability of the VND structures for transport measurements on proteins was investigated by functionalizing the devices with cytochrome c protein from solution, thereby providing non-destructive, permanent semiconducting contacts to the proteins. Current-voltage measurements performed after protein deposition exhibited an increase in the junctions’ conductance of up to several orders of magnitude relative to that measured prior to cytochrome c immobilization. This increase in conductance was lost upon heating the functionalized device to above the protein’s denaturation temperature (80 °C). Thus, the VND junctions allow conductance measurements which reflect the averaged electronic transport through a large number of protein molecules, contacted in parallel with permanent contacts and, for the first time, in a symmetrical Si-protein-Si configuration.

Towards nanometer-spaced silicon contacts to proteins.

PubMed

Schukfeh, Muhammed I; Sepunaru, Lior; Behr, Pascal; Li, Wenjie; Pecht, Israel; Sheves, Mordechai; Cahen, David; Tornow, Marc

2016-03-18

A vertical nanogap device (VND) structure comprising all-silicon contacts as electrodes for the investigation of electronic transport processes in bioelectronic systems is reported. Devices were fabricated from silicon-on-insulator substrates whose buried oxide (SiO2) layer of a few nanometers in thickness is embedded within two highly doped single crystalline silicon layers. Individual VNDs were fabricated by standard photolithography and a combination of anisotropic and selective wet etching techniques, resulting in p(+) silicon contacts, vertically separated by 4 or 8 nm, depending on the chosen buried oxide thickness. The buried oxide was selectively recess-etched with buffered hydrofluoric acid, exposing a nanogap. For verification of the devices' electrical functionality, gold nanoparticles were successfully trapped onto the nanogap electrodes' edges using AC dielectrophoresis. Subsequently, the suitability of the VND structures for transport measurements on proteins was investigated by functionalizing the devices with cytochrome c protein from solution, thereby providing non-destructive, permanent semiconducting contacts to the proteins. Current-voltage measurements performed after protein deposition exhibited an increase in the junctions' conductance of up to several orders of magnitude relative to that measured prior to cytochrome c immobilization. This increase in conductance was lost upon heating the functionalized device to above the protein's denaturation temperature (80 °C). Thus, the VND junctions allow conductance measurements which reflect the averaged electronic transport through a large number of protein molecules, contacted in parallel with permanent contacts and, for the first time, in a symmetrical Si-protein-Si configuration.

Macro- and microscopic properties of strontium doped indium oxide

NASA Astrophysics Data System (ADS)

Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

2014-07-01

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T = 20-300 °C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x = 10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x = 10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 °C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3 × 10-13 cm2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

Built-in potential shift and Schottky-barrier narrowing in organic solar cells with UV-sensitive electron transport layers.

PubMed

Li, Cheng; Credgington, Dan; Ko, Doo-Hyun; Rong, Zhuxia; Wang, Jianpu; Greenham, Neil C

2014-06-28

The performance of organic solar cells incorporating solution-processed titanium suboxide (TiOx) as electron-collecting layers can be improved by UV illumination. We study the mechanism of this improvement using electrical measurements and electroabsorption spectroscopy. We propose a model in which UV illumination modifies the effective work function of the oxide layer through a significant increase in its free electron density. This leads to a dramatic improvement in device power conversion efficiency through several mechanisms - increasing the built-in potential by 0.3 V, increasing the conductivity of the TiOx layer and narrowing the interfacial Schottky barrier between the suboxide and the underlying transparent electrode. This work highlights the importance of considering Fermi-level equilibration when designing multi-layer transparent electrodes.

Articles including thin film monolayers and multilayers

DOEpatents

Li, DeQuan; Swanson, Basil I.

1995-01-01

Articles of manufacture including: (a) a base substrate having an oxide surface layer, and a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, (b) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, and a metal species attached to the multidentate ligand, (c) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, a metal species attached to the multidentate ligand, and a multifunctional organic ligand attached to the metal species, and (d) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, a metal species attached to the multidentate ligand, a multifunctional organic ligand attached to the metal species, and a second metal species attached to the multifunctional organic ligand, are provided, such articles useful in detecting the presence of a selected target species, as nonliear optical materials, or as scavengers for selected target species.

Effects of anodic oxidation parameters on a modified titanium surface.

PubMed

Park, Il Song; Lee, Min Ho; Bae, Tae Sung; Seol, Kyeong Won

2008-02-01

Anodic oxidation is an electrochemical treatment that can be used to control the thickness of an oxide layer formed on a titanium surface. This procedure has the advantage of allowing the ions contained in an electrolyte to deposit onto the oxide layer. The characteristics of a layer treated with anodic oxidation can vary according to the type and concentration of the electrolytes as well as the processing variables used during anodic oxidation. In this study, the constant electrolyte for anodic oxidation was a mixed solution containing 0.02 M DL-alpha-glycerophosphate disodium salt and 0.2M calcium acetate. Anodic oxidation was carried out at different voltages, current densities, and duration of anodic oxidation. The results showed that the current density and variation in the duration of anodic oxidation did not have a large effect on the change in the characteristics of the layer. On the other hand, the size of the micropores was increased with increasing voltage of anodic oxidation, and anatase and rutile phases were found to co-exist in the porous titanium dioxide layer. In addition, the thickness of the oxide layer on titanium and the characteristic of corrosion resistance increased with increasing voltage. The MTT test showed that the cell viability was increased considerably as a result of anodic oxidation. The anodizing voltage is an important parameter that determines the characteristics of the anodic oxide layer of titanium. (c) 2007 Wiley Periodicals, Inc.

Reduced thermal conductivity by nanoscale intergrowths in perovskite like layered structure La{sub 2}Ti{sub 2}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khaliq, Jibran; Chen, Kan; Li, Chunchun

2015-02-21

The effect of substitution and oxidation-reduction on the thermal conductivity of perovskite-like layered structure (PLS) ceramics was investigated in relation to mass contrast and non-stoichiometry. Sr (acceptor) was substituted on the A site, while Ta (donor) was substituted on the B site of La{sub 2}Ti{sub 2}O{sub 7}. Substitution in PLS materials creates atomic scale disorders to accommodate the non-stoichiometry. High resolution transmission electron microscopy and X ray diffraction revealed that acceptor substitution in La{sub 2}Ti{sub 2}O{sub 7} produced nanoscale intergrowths of n = 5 layered phase, while donor substitution produced nanoscale intergrowths of n = 3 layered phase. As a result of these nanoscalemore » intergrowths, the thermal conductivity value reduced by as much as ∼20%. Pure La{sub 2}Ti{sub 2}O{sub 7} has a thermal conductivity value of ∼1.3 W/m K which dropped to a value of ∼1.12 W/m K for Sr doped La{sub 2}Ti{sub 2}O{sub 7} and ∼0.93 W/m K for Ta doped La{sub 2}Ti{sub 2}O{sub 7} at 573 K.« less

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

NASA Astrophysics Data System (ADS)

Winarski, D. J.; Anwand, W.; Wagner, A.; Saadatkia, P.; Selim, F. A.; Allen, M.; Wenner, B.; Leedy, K.; Allen, J.; Tetlak, S.; Look, D. C.

2016-09-01

Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (˜10-2 Ω .cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

Structure, temperature and frequency dependent electrical conductivity of oxidized and reduced electrochemically exfoliated graphite

NASA Astrophysics Data System (ADS)

Radoń, Adrian; Włodarczyk, Patryk; Łukowiec, Dariusz

2018-05-01

The article presents the influence of reduction by hydrogen in statu nascendi and modification by hydrogen peroxide on the structure and electrical conductivity of electrochemically exfoliated graphite. It was confirmed that the electrochemical exfoliation can be used to produce oxidized nanographite with an average number of 25 graphene layers. The modified electrochemical exfoliated graphite and reduced electrochemical exfoliated graphite were characterized by high thermal stability, what was associated with removing of labile oxygen-containing groups. The presence of oxygen-containing groups was confirmed using Fourier-transform infrared spectroscopy. Influence of chemical modification by hydrogen and hydrogen peroxide on the electrical conductivity was determined in wide frequency (0.1 Hz-10 kHz) and temperature range (-50 °C-100 °C). Material modified by hydrogen peroxide (0.29 mS/cm at 0 °C) had the lowest electrical conductivity. This can be associated with oxidation of unstable functional groups and was also confirmed by analysis of Raman spectra. The removal of oxygen-containing functional groups by hydrogen in statu nascendi resulted in a 1000-fold increase in the electrical conductivity compared to the electrochemical exfoliated graphite.

Mechanical Properties of Degraded PMR-15 Resin

NASA Technical Reports Server (NTRS)

Tsuji, Luis C.; McManus, Hugh L.; Bowles, Kenneth J.

1998-01-01

Thermo-oxidative aging produces a non-uniform degradation state in PMR-15 resin. A surface layer, usually attributed to oxidative degradation, forms. This surface layer has different properties from the inner material. A set of material tests was designed to separate the properties of the oxidized surface layer from the properties of interior material. Test specimens were aged at 316 C in either air or nitrogen, for durations of up to 800 hours. The thickness of the oxidized surface layer in air aged specimens, and the shrinkage and Coefficient of Thermal Expansion (CTE) of nitrogen aged specimens were measured directly. Four-point-bend tests were performed to determine modulus of both the oxidized surface layer and the interior material. Bimaterial strip specimens consisting of oxidized surface material and unoxidized interior material were constructed and used to determine surface layer shrinkage and CTE. Results confirm that the surface layer and core materials have substantially different properties.

Method of making an apparatus for transpiration cooling of substrates such as turbine airfoils

DOEpatents

Alvin, Mary Anne; Anderson, Iver; Heidlof, Andy; White, Emma; McMordie, Bruce

2017-02-28

A method and apparatus for generating transpiration cooling using an oxidized porous HTA layer metallurgically bonded to a substrate having micro-channel architectures. The method and apparatus generates a porous HTA layer by spreading generally spherical HTA powder particles on a substrate, partially sintering under O.sub.2 vacuum until the porous HTA layer exhibits a porosity between 20% and 50% and a neck size ratio between 0.1 and 0.5, followed by a controlled oxidation generating an oxidation layer of alumina, chromia, or silica at a thickness of about 20 to about 500 nm. In particular embodiments, the oxidized porous HTA layer and the substrate comprise Ni as a majority element. In other embodiments, the oxidized porous HTA layer and the substrate further comprise Al, and in additional embodiments, the oxidized porous HTA layer and the substrate comprise .gamma.-Ni+.gamma.'-Ni.sub.3Al.

Magnetic preferential orientation of metal oxide superconducting materials

DOEpatents

Capone, D.W.; Dunlap, B.D.; Veal, B.W.

1990-07-17

A superconductor comprised of a polycrystalline metal oxide such as YBa[sub 2]Cu[sub 3]O[sub 7[minus]X] (where 0 < X < 0.5) exhibits superconducting properties and is capable of conducting very large current densities. By aligning the two-dimensional Cu-O layers which carry the current in the superconducting state in the a- and b-directions, i.e., within the basal plane, a high degree of crystalline axes alignment is provided between adjacent grains permitting the conduction of high current densities. The highly anisotropic diamagnetic susceptibility of the polycrystalline metal oxide material permits the use of an applied magnetic field to orient the individual crystals when in the superconducting state to substantially increase current transport between adjacent grains. In another embodiment, the anisotropic paramagnetic susceptibility of rare-earth ions substituted into the oxide material is made use of as an applied magnetic field orients the particles in a preferential direction. This latter operation can be performed with the material in the normal (non-superconducting) state. 4 figs.

Magnetic preferential orientation of metal oxide superconducting materials

DOEpatents

Capone, Donald W.; Dunlap, Bobby D.; Veal, Boyd W.

1990-01-01

A superconductor comprised of a polycrystalline metal oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-X (where 0

Strongly coupled Sm0.2Ce0.8O2-Na2CO3 nanocomposite for low temperature solid oxide fuel cells: One-step synthesis and super interfacial proton conduction

NASA Astrophysics Data System (ADS)

Zhang, Guanghong; Li, Wenjian; Huang, Wen; Cao, Zhiqun; Shao, Kang; Li, Fengjiao; Tang, Chaoyun; Li, Cuihua; He, Chuanxin; Zhang, Qianling; Fan, Liangdong

2018-05-01

Highly conductive ceria-carbonate composite represents one type of most promising electrolyte materials for low temperature solid oxide fuel cells (SOFCs). Composites with large oxide-carbonate interface and homogeneous element/phase distribution are desirable to further enhance electrical properties and to study the ionic conduction mechanism. In this work, we report the successful synthesis of element/phase well-distributed, interfacial strongly coupled Sm0.2Ce0.8O2-Na2CO3 (NSDC) nanocomposite with different residual carbonate contents by an in-situ one-pot one-step citric acid-nitrate combustion method. Interestingly, NSDC shows distinct properties over those prepared by conventional methods and improved ionic conductivity. In particular, NSDC9010 nanocomposite displays a proton conductivity of 0.044 S cm-1 at 650 °C, which is 3-5 times higher than the oxide proton conductors. Electrolyte supported SOFCs based on the resultant nanocomposite electrolyte, NSDC9010, give the best power output of 281.5 mW cm-2 at 600 °C with LiNiO2 symmetric electro-catalysts. The excellent ionic conductivity and fuel cell performance are correlated with the unique core-shell structure, good phase distribution and large interfacial area induced by the one-step fabrication method, the strong coupling between oxide and carbonate as verified by the differential thermal and Raman spectroscopy characterization results and the optimal interfacial carbonate layer thickness by intentionally adjusting of carbonate contents.

Magnetron Sputtered Molybdenum Oxide for Application in Polymers Solar Cells

NASA Astrophysics Data System (ADS)

Sendova-Vassileva, M.; Dikov, Hr; Vitanov, P.; Popkirov, G.; Gergova, R.; Grancharov, G.; Gancheva, V.

2016-10-01

Thin films of molybdenum oxide were deposited by radio frequency (RF) magnetron sputtering in Ar from a MoO3 target at different deposition power on glass and silicon substrates. The thickness of the films was determined by profilometer measurements and by ellipsometry. The films were annealed in air at temperatures between 200 and 400°C in air. The optical transmission and reflection spectra were measured. The conductivity of the as deposited and annealed films was determined. The crystal structure was probed by Raman spectroscopy. The oxidation state of the surface was studied by X-ray photoelectron spectroscopy (XPS) spectroscopy. The deposition technique described above was used to experiment with MoOx as a hole transport layer (HTL) in polymer solar cells with bulk hetrojunction active layer, deposited by spin coating. The performance of these layers was compared with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), which is the standard material used in this role. The measured current-voltage characteristics of solar cells with the structure glass/ITO/HTL/Poly(3-hexyl)thiophene (P3HT):[6,6]-phenyl-C61- butyric acid methyl ester (PCBM)/Al demonstrate that the studied MoOx layer is a good HTL and leads to comparable characteristics to those with PEDOT:PSS. On the other hand the deposition by magnetron sputtering guarantees reliable and repeatable HTLs.

Photon-induced oxidation of graphene/Ir(111) by SO2 adsorption

NASA Astrophysics Data System (ADS)

Böttcher, Stefan; Vita, Hendrik; Horn, Karsten

2015-11-01

We prepare a single layer of graphene oxide by adsorption and subsequent photo-dissociation of SO2 on graphene/Ir(111). Epoxidic oxygen is formed as the main result of this process on graphene, as judged from the appearance of characteristic spectroscopic features in the C 1s and O 1s core level lines. The different stages of decomposition of SO2 into its photo-fragments are examined during the oxidation process. NEXAFS at the carbon K edge reveals a strong disturbance of the graphene backbone after oxidation and upon SO adsorption. The oxide phase is stable up to room temperature, and is fully reversible upon annealing at elevated temperatures. A band gap opening of 330 ± 60 meV between the valence and conduction bands is observed in the graphene oxide phase.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Ultrathin planar graphene supercapacitors.

PubMed

Yoo, Jung Joon; Balakrishnan, Kaushik; Huang, Jingsong; Meunier, Vincent; Sumpter, Bobby G; Srivastava, Anchal; Conway, Michelle; Reddy, Arava Leela Mohana; Yu, Jin; Vajtai, Robert; Ajayan, Pulickel M

2011-04-13

With the advent of atomically thin and flat layers of conducting materials such as graphene, new designs for thin film energy storage devices with good performance have become possible. Here, we report an "in-plane" fabrication approach for ultrathin supercapacitors based on electrodes comprised of pristine graphene and multilayer reduced graphene oxide. The in-plane design is straightforward to implement and exploits efficiently the surface of each graphene layer for energy storage. The open architecture and the effect of graphene edges enable even the thinnest of devices, made from as grown 1-2 graphene layers, to reach specific capacities up to 80 μFcm(-2), while much higher (394 μFcm(-2)) specific capacities are observed multilayer reduced graphene oxide electrodes. The performances of devices with pristine as well as thicker graphene-based structures are examined using a combination of experiments and model calculations. The demonstrated all solid-state supercapacitors provide a prototype for a broad range of thin-film based energy storage devices.

Zinc nitride thin films: basic properties and applications

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Gómez-Castaño, M.; García Núñez, C.; Domínguez, M.; Vázquez, L.; Pau, J. L.

2017-02-01

Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at substrate temperatures lower than 250°C. This low deposition temperature makes the material compatible with flexible substrates. The asgrown layers present a black color, polycrystalline structures, large conductivities, and large visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. Different compositional, structural and optical characterization techniques have shown that the films turn into ZnO polycrystalline layers, showing visible transparency and semi-insulating properties after total transformation. The oxidation rate is fairly constant as a function of time and depends on environmental parameters such as relative humidity or temperature. Taking advantage of those properties, potential applications of zinc nitride films in environmental sensing have been studied in the recent years. This work reviews the state-of-the-art of the zinc nitride technology and the development of several devices such as humidity indicators, thin film (photo)transistors and sweat monitoring sensors.

Thermal treatment effects on charge storage performance of graphene-based materials for supercapacitors.

PubMed

Zhang, Hongxin; Bhat, Vinay V; Gallego, Nidia C; Contescu, Cristian I

2012-06-27

Graphene materials were synthesized by reduction of exfoliated graphite oxide and then thermally treated in nitrogen to improve the surface area and their electrochemical performance as electrical double-layer capacitor electrodes. The structural and surface properties of the prepared reduced graphite oxide (RGO) were investigated using atomic force microscopy, scanning electron microscopy, Raman spectra, X-ray diffraction pattern analysis, and nitrogen adsorption/desorption studies. RGO forms a continuous network of crumpled sheets, which consist of large amounts of few-layer and single-layer graphenes. Electrochemical studies were conducted by cyclic voltammetry, impedance spectroscopy, and galvanostatic charge-discharge measurements. The modified RGO materials showed enhanced electrochemical performance, with maximum specific capacitance of 96 F/g, energy density of 12.8 Wh/kg, and power density of 160 kW/kg. These results demonstrate that thermal treatment of RGO at selected conditions is a convenient and efficient method for improving its specific capacitance, energy, and power density.

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

NASA Astrophysics Data System (ADS)

Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.

2007-05-01

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1-2nm) ALD Hf3N4 or AlN layers exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low as 0.8nm, no significant flatband voltage shifts, and midgap density of interface states values of 2×1012cm-1eV-1. Functional n-channel and p-channel Ge field effect transistors with nitride interlayer/high-κ oxide/metal gate stacks are demonstrated.

Oxidation of InP nanowires: a first principles molecular dynamics study.

PubMed

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier

NASA Astrophysics Data System (ADS)

Mešić, Biljana; Schroeder, Herbert

2011-09-01

The high permittivity perovskite oxides have been intensively investigated for their possible application as dielectric materials for stacked capacitors in dynamic random access memory circuits. For the integration of such oxide materials into the CMOS world, a conductive diffusion barrier is indispensable. An optimized stack p++-Si/Pt/Ta21Si57N21/Ir was developed and used as the bottom electrode for the oxide dielectric. The amorphous TaSiN film as oxygen diffusion barrier showed excellent conductive properties and a good thermal stability up to 700 °C in oxygen ambient. The additional protective iridium layer improved the surface roughness after annealing. A 100-nm-thick (Ba,Sr)TiO3 film was deposited using pulsed laser deposition at 550 °C, showing very promising properties for application; the maximum relative dielectric constant at zero field is κ ≈ 470, and the leakage current density is below 10-6 A/cm2 for fields lower then ± 200 kV/cm, corresponding to an applied voltage of ± 2 V.

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

NASA Astrophysics Data System (ADS)

Chien, W. C.; Chen, Y. C.; Lai, E. K.; Lee, F. M.; Lin, Y. Y.; Chuang, Alfred T. H.; Chang, K. P.; Yao, Y. D.; Chou, T. H.; Lin, H. M.; Lee, M. H.; Shih, Y. H.; Hsieh, K. Y.; Lu, Chih-Yuan

2011-03-01

Tungsten oxide (WO X ) resistive memory (ReRAM), a two-terminal CMOS compatible nonvolatile memory, has shown promise to surpass the existing flash memory in terms of scalability, switching speed, and potential for 3D stacking. The memory layer, WO X , can be easily fabricated by down-stream plasma oxidation (DSPO) or rapid thermal oxidation (RTO) of W plugs universally used in CMOS circuits. Results of conductive AFM (C-AFM) experiment suggest the switching mechanism is dominated by the REDOX (Reduction-oxidation) reaction—the creation of conducting filaments leads to a low resistance state and the rupturing of the filaments results in a high resistance state. Our experimental results show that the reactions happen at the TE/WO X interface. With this understanding in mind, we proposed two approaches to boost the memory performance: (i) using DSPO to treat the RTO WO X surface and (ii) using Pt TE, which forms a Schottky barrier with WO X . Both approaches, especially the latter, significantly reduce the forming current and enlarge the memory window.

Plasma-enhanced atomic layer deposition zinc oxide for multifunctional thin film electronics

NASA Astrophysics Data System (ADS)

Mourey, Devin A.

A novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process has been used to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200°C. Weak oxidant PEALD provides a simple, fast deposition process which results in uniform, conformal coatings and highly crystalline, dense ZnO thin films. These films and resulting devices have been compared with those prepared by spatial atomic layer deposition (SALD) throughout the work. Both PEALD and SALD ZnO TFTs have high field-effect mobility (>20 cm 2/V·s) and devices with ALD Al2O3 passivation can have excellent bias stress stability. Temperature dependent measurements of PEALD ZnO TFTs revealed a mobility activation energy < 5 meV and can be described using a simple percolation model with a Gaussian distribution of near-conduction band barriers. Interestingly, both PEALD and SALD devices operate with mobility > 1 cm2/V·s even at temperatures < 10 K. The effects of high energy irradiation have also been investigated. Devices exposed to 1 MGy of gamma irradiation showed small threshold voltage shifts (<2 V) which were fully recoverable with short (1 min) low-temperature (200°C) anneals. ZnO TFTs exhibit a range of non-ideal behavior which has direct implications on how important parameters such as mobility and threshold voltage are quantified. For example, the accumulation-dependent mobility and contact effects can lead to significant overestimations in mobility. It is also found that self-heating plays and important role in the non-ideal behavior of oxide TFTs on low thermal conductivity substrates. In particular, the output conductance and a high current device runaway breakdown effect can be directly ascribed to self-heating. Additionally, a variety of simple ZnO circuits on glass and flexible substrates were demonstrated. A backside exposure process was used to form gate-self-aligned structures with reduced parasitic capacitance and circuits with propagation delay < 10 ns/stage. Finally, to combat some of the self-heating and design challenges associated with unipolar circuits, a simple 4-mask organic-inorganic hybrid CMOS process was demonstrated.

Si photoanode protected by a metal modified ITO layer with ultrathin NiO(x) for solar water oxidation.

PubMed

Sun, Ke; Shen, Shaohua; Cheung, Justin S; Pang, Xiaolu; Park, Namseok; Zhou, Jigang; Hu, Yongfeng; Sun, Zhelin; Noh, Sun Young; Riley, Conor T; Yu, Paul K L; Jin, Sungho; Wang, Deli

2014-03-14

We report an ultrathin NiOx catalyzed Si np(+) junction photoanode for a stable and efficient solar driven oxygen evolution reaction (OER) in water. A stable semi-transparent ITO/Au/ITO hole conducting oxide layer, sandwiched between the OER catalyst and the Si photoanode, is used to protect the Si from corrosion in an alkaline working environment, enhance the hole transportation, and provide a pre-activation contact to the NiOx catalyst. The NiOx catalyzed Si photoanode generates a photocurrent of 1.98 mA cm(-2) at the equilibrium water oxidation potential (EOER = 0.415 V vs. NHE in 1 M NaOH solution). A thermodynamic solar-to-oxygen conversion efficiency (SOCE) of 0.07% under 0.51-sun illumination is observed. The successful development of a low cost, highly efficient, and stable photoelectrochemical electrode based on earth abundant elements is essential for the realization of a large-scale practical solar fuel conversion.

Direct observation of spatially heterogeneous single-layer graphene oxide reduction kinetics.

PubMed

McDonald, Matthew P; Eltom, Ahmed; Vietmeyer, Felix; Thapa, Janak; Morozov, Yurii V; Sokolov, Denis A; Hodak, Jose H; Vinodgopal, Kizhanipuram; Kamat, Prashant V; Kuno, Masaru

2013-01-01

Graphene oxide (GO) is an important precursor in the production of chemically derived graphene. During reduction, GO's electrical conductivity and band gap change gradually. Doping and chemical functionalization are also possible, illustrating GO's immense potential in creating functional devices through control of its local hybridization. Here we show that laser-induced photolysis controllably reduces individual single-layer GO sheets. The reaction can be followed in real time through sizable decreases in GO's photoluminescence efficiency along with spectral blueshifts. As-produced reduced graphene oxide (rGO) sheets undergo additional photolysis, characterized by dramatic emission enhancements and spectral redshifts. Both GO's reduction and subsequent conversion to photobrightened rGO are captured through movies of their photoluminescence kinetics. Rate maps illustrate sizable spatial and temporal heterogeneities in sp(2) domain growth and reveal how reduction "flows" across GO and rGO sheets. The observed heterogeneous reduction kinetics provides mechanistic insight into GO's conversion to chemically derived graphene and highlights opportunities for overcoming its dynamic, chemical disorder.

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

NASA Astrophysics Data System (ADS)

Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

2017-11-01

Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

Isolation and characterization of nanosheets containing few layers of the Aurivillius family of oxides and metal-organic compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sreedhara, M.B.; Prasad, B.E.; Moirangthem, Monali

2015-04-15

Nanosheets containing few-layers of ferroelectric Aurivillius family of oxides, Bi{sub 2}A{sub n−1}B{sub n}O{sub 3n+3} (where A=Bi{sup 3+}, Ba{sup 2+} etc. and B=Ti{sup 4+}, Fe{sup 3+} etc.) with n=3, 4, 5, 6 and 7 have been prepared by reaction with n-butyllithium, followed by exfoliation in water. The few-layer samples have been characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and other techniques. The few-layer species have a thickness corresponding to a fraction of the c-parameter along which axis the perovskite layers are stacked. Magnetization measurements have been carried out on the few-layer samples containing iron. Few-layer species of a fewmore » layered metal-organic compounds have been obtained by ultrasonication and characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and magnetic measurements. Significant changes in the optical spectra and magnetic properties are found in the few-layer species compared to the bulk samples. Few-layer species of the Aurivillius family of oxides may find uses as thin layer dielectrics in photovoltaics and other applications. - Graphical abstract: Exfoliation of the layered Aurivillius oxides into few-layer nanosheets by chemical Li intercalation using n-BuLi followed by reaction in water. Exfoliation of the layered metal-organic compounds into few-layer nanosheets by ultrasonication. - Highlights: • Few-layer nanosheets of Aurivillius family of oxides with perovskite layers have been generated by lithium intercalation. • Few-layer nanosheets of few layered metal-organic compounds have been generated by ultrasonication. • Few-layer nanosheets of the Aurivillius oxides have been characterized by AFM, TEM and optical spectroscopy. • Aurivillius oxides containing Fe show layer dependent magnetic properties. • Exfoliated few-layer metal-organic compounds show changes in spectroscopic and magnetic properties compared with bulk materials.« less

Metal oxide composite enabled nanotextured Si photoanode for efficient solar driven water oxidation.

PubMed

Sun, Ke; Pang, Xiaolu; Shen, Shaohua; Qian, Xueqiang; Cheung, Justin S; Wang, Deli

2013-05-08

We present a study of a transition metal oxide composite modified n-Si photoanode for efficient and stable water oxidation. This sputter-coated composite functions as a protective coating to prevent Si from photodecomposition, a Schottky heterojunction, a hole conducting layer for efficient charge separation and transportation, and an electrocatalyst to reduce the reaction overpotential. The formation of mixed-valence oxides composed of Ni and Ru effectively modifies the optical, electrical, and catalytic properties of the coating material, as well as the interfaces with Si. The successful application of this oxide composite on nanotextured Si demonstrates improved conversion efficiency due to enhanced catalytic activity, minimized reflection, and increased surface reaction sites. Although the coated nanotextured Si shows a noticeable degradation from 500 cycles of operation, the oxide composite provides a simple method to enable unstable photoanode materials for solar fuel conversion.

Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

NASA Astrophysics Data System (ADS)

Carvalho, Luisa; Pacquentin, Wilfried; Tabarant, Michel; Maskrot, Hicham; Semerok, Alexandre

2017-09-01

The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu) as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a `duplex structure' with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

Fabrication and stability investigation of ultra-thin transparent and flexible Cu-Ag-Au tri-layer film on PET

NASA Astrophysics Data System (ADS)

Prakasarao, Ch Surya; D'souza, Slavia Deeksha; Hazarika, Pratim; Karthiselva N., S.; Ramesh Babu, R.; Kovendhan, M.; Kumar, R. Arockia; Joseph, D. Paul

2018-04-01

The need for transparent conducting electrodes with high transmittance, low sheet resistance and flexibility to replace Indium Tin Oxide is ever growing. We have deposited and studied the performance of ultra-thin Cu-Ag-Au tri-layer films over a flexible poly-ethylene terephthalate substrate. Scotch tape test showed good adhesion of the metallic film. Transmittance of the tri-layer was around 40 % in visible region. Optical profiler measurements were done to study the surface features. The XRD pattern revealed that film was amorphous. Sheet resistance measured by four probe technique was around 7.7 Ohm/Δ and was stable up to 423 K. The transport parameters by Hall effect showed high conductivity and carrier concentration with a mobility of 5.58 cm2/Vs. Tests performed in an indigenously designed bending unit indicated the films to be stable both mechanically and electrically even after 50,000 bending cycles.

Electrical and magnetic properties of conductive Cu-based coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Thompson, J. R.; Goyal, A.; Rutter, N.; Zhai, H. Y.; Gapud, A. A.; Ijaduola, A. O.; Christen, D. K.

2003-11-01

The development of YBa2Cu3O7-δ (YBCO)-based coated conductors for electric power applications will require electrical and thermal stabilization of the high-temperature superconducting (HTS) coating. In addition, nonmagnetic tape substrates are an important factor in order to reduce the ferromagnetic hysteresis energy loss in ac applications. We report progress toward a conductive buffer layer architecture on biaxially textured nonmagnetic Cu tapes to electrically couple the HTS layer to the underlying metal substrate. A protective Ni overlayer, followed by a single buffer layer of La0.7Sr0.3MnO3, was employed to avoid Cu diffusion and to improve oxidation resistance of the substrate. Property characterizations of YBCO films on short prototype samples revealed self-field critical current density (Jc) values exceeding 2×106 A/cm2 at 77 K and good electrical connectivity. Magnetic hysteretic loss due to Ni overlayer was also investigated.

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

NASA Astrophysics Data System (ADS)

Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

2018-01-01

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.

2016-03-15

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materialsmore » on the basis of porous silicon and nanostructures with a high aspect ratio.« less

A vacancy-modulated self-selective resistive switching memory with pronounced nonlinear behavior

NASA Astrophysics Data System (ADS)

Ma, Haili; Feng, Jie; Gao, Tian; Zhu, Xi

2017-12-01

In this study, we report a self-selective (nonlinear) resistive switching memory cell, with high on-state half-bias nonlinearity of 650, sub-μA operating current, and high On/Off ratios above 100×. Regarding the cell structure, a thermal oxidized HfO x layer in combination with a sputtered Ta2O5 layer was configured as an active stack, with Pt and Hf as top and bottom electrodes, respectively. The Ta2O5 acts as a selective layer as well as a series resistor, which could make the resistive switching happened in HfO x layer. Through the analysis of the physicochemical properties and electrical conduction mechanisms at each state, a vacancy-modulated resistance switching model was proposed to explain the switching behavior. The conductivity of HfO x layer was changed by polarity-dependent drift of the oxygen vacancy ( V o), resulting in an electron hopping distance change during switching. With the help of Ta2O5 selective layer, high nonlinearity observed in low resistance state. The proposed material stack shows a promising prospect to act as a self-selective cell for 3D vertical RRAM application.

Continuous lengths of oxide superconductors

DOEpatents

Kroeger, Donald M.; List, III, Frederick A.

2000-01-01

A layered oxide superconductor prepared by depositing a superconductor precursor powder on a continuous length of a first substrate ribbon. A continuous length of a second substrate ribbon is overlaid on the first substrate ribbon. Sufficient pressure is applied to form a bound layered superconductor precursor powder between the first substrate ribbon and the second substrate ribbon. The layered superconductor precursor is then heat treated to establish the oxide superconducting phase. The layered oxide superconductor has a smooth interface between the substrate and the oxide superconductor.

CVD Polymers for Devices and Device Fabrication.

PubMed

Wang, Minghui; Wang, Xiaoxue; Moni, Priya; Liu, Andong; Kim, Do Han; Jo, Won Jun; Sojoudi, Hossein; Gleason, Karen K

2017-03-01

Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high-purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro- and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Architecture for coated conductors

DOEpatents

Foltyn, Stephen R.; Arendt, Paul N.; Wang, Haiyan; Stan, Liliana

2010-06-01

Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.

Desulfurization apparatus and method

DOEpatents

Rong, Charles; Jiang, Rongzhong; Chu, Deryn

2013-06-18

A method and system for desulfurization comprising first and second metal oxides; a walled enclosure having an inlet and an exhaust for the passage of gas to be treated; the first and second metal oxide being combinable with hydrogen sulfide to produce a reaction comprising a sulfide and water; the first metal oxide forming a first layer and the second metal oxide forming a second layer within the walled surroundings; the first and second layers being positioned so the first layer removes the bulk amount of the hydrogen sulfide from the treated gas prior to passage through the second layer, and the second layer removes substantially all of the remaining hydrogen sulfide from the treated gas; the first metal oxide producing a stoichiometrical capacity in excess of 500 mg sulfur/gram; the second metal oxide reacts with the hydrogen sulfide more favorably but has a stoichometrical capacity which is less than the first reactant; whereby the optimal amount by weight of the first and second metal oxides is achieved by utilizing two to three units by weight of the first metal oxide for every unit of the second metal oxide.

Cu(In,Ga)Se2 Solar Cells with Amorphous In2O3-Based Front Contact Layers.

PubMed

Koida, Takashi; Ueno, Yuko; Nishinaga, Jiro; Higuchi, Hirohumi; Takahashi, Hideki; Iioka, Masayuki; Shibata, Hajime; Niki, Shigeru

2017-09-06

Amorphous (a-) In 2 O 3 -based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J sc ) of Cu(In,Ga)Se 2 (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V oc ). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10 15 to 3 × 10 18 cm -3 . The decrease in FF and V oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In 2 O 3 :H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In 2 O 3 -based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V oc of the CIGS solar cells and the mini-modules.

Low temperature platinum atomic layer deposition on nylon-6 for highly conductive and catalytic fiber mats

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mundy, J. Zachary; Shafiefarhood, Arya; Li, Fanxing

2016-01-15

Low temperature platinum atomic layer deposition (Pt-ALD) via (methylcyclopentadienyl)trimethyl platinum and ozone (O{sub 3}) is used to produce highly conductive nonwoven nylon-6 (polyamide-6, PA-6) fiber mats, having effective conductivities as high as ∼5500–6000 S/cm with only a 6% fractional increase in mass. The authors show that an alumina ALD nucleation layer deposited at high temperature is required to promote Pt film nucleation and growth on the polymeric substrate. Fractional mass gain scales linearly with Pt-ALD cycle number while effective conductivity exhibits a nonlinear trend with cycle number, corresponding to film coalescence. Field-emission scanning electron microscopy reveals island growth mode ofmore » the Pt film at low cycle number with a coalesced film observed after 200 cycles. The metallic coating also exhibits exceptional resistance to mechanical flexing, maintaining up to 93% of unstressed conductivity after bending around cylinders with radii as small as 0.3 cm. Catalytic activity of the as-deposited Pt film is demonstrated via carbon monoxide oxidation to carbon dioxide. This novel low temperature processing allows for the inclusion of highly conductive catalytic material on a number of temperature-sensitive substrates with minimal mass gain for use in such areas as smart textiles and flexible electronics.« less

Hot Electron Injection into Uniaxially Strained Silicon

NASA Astrophysics Data System (ADS)

Kim, Hyun Soo

In semiconductor spintronics, silicon attracts great attention due to the long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process of diamond crystal structure such as silicon is dominant by Elliot-Yafet mechanism. Yafet shows that intravalley scattering process is dominant. The conduction electron spin lifetime measured by electron spin resonance measurement and electronic measurement using ballistic hot electron method well agrees with Yafet's theory. However, the recent theory predicts a strong contribution of intervalley scattering process such as f-process in silicon. The conduction band minimum is close the Brillouin zone edge, X point which causes strong spin mixing at the conduction band. A recent experiment of electric field-induced hot electron spin relaxation also shows the strong effect of f-process in silicon. In uniaxially strained silicon along crystal axis [100], the suppression of f-process is predicted which leads to enhance electron spin lifetime. By inducing a change in crystal structure due to uniaxial strain, the six fold degeneracy becomes two fold degeneracy, which is valley splitting. As the valley splitting increases, intervalley scattering is reduced. A recent theory predicts 4 times longer electron spin lifetime in 0.5% uniaxially strained silicon. In this thesis, we demonstrate ballistic hot electron injection into silicon under various uniaxial strain. Spin polarized hot electron injection under strain is experimentally one of the most challenging part to measure conduction electron spin lifetime in silicon. Hot electron injection adopts tunnel junction which is a thin oxide layer between two conducting materials. Tunnel barrier, which is an oxide layer, is only 4 ˜ 5 nm thick. Also, two conducting materials are only tens of nanometer. Therefore, under high pressure to apply 0.5% strain on silicon, thin films on silicon substrate can be easily destroyed. In order to confirm the performance of tunnel junction, we use tunnel magnetoresistance(TMR). TMR consists of two kinds of ferromagnetic materials and an oxide layer as tunnel barrier in order to measure spin valve effect. Using silicon as a collector with Schottky barrier interface between metal and silicon, ballistic hot spin polarized electron injection into silicon is demonstrated. We also observed change of coercive field and magnetoresistance due to modification of local states in ferromagnetic materials and surface states at the interface between metal and silicon due to strain.

Layer-by-layer assembly of graphene oxide on thermosensitive liposomes for photo-chemotherapy.

PubMed

Hashemi, Mohadeseh; Omidi, Meisam; Muralidharan, Bharadwaj; Tayebi, Lobat; Herpin, Matthew J; Mohagheghi, Mohammad Ali; Mohammadi, Javad; Smyth, Hugh D C; Milner, Thomas E

2018-01-01

Stimuli responsive polyelectrolyte nanoparticles have been developed for chemo-photothermal destruction of breast cancer cells. This novel system, called layer by layer Lipo-graph (LBL Lipo-graph), is composed of alternate layers of graphene oxide (GO) and graphene oxide conjugated poly (l-lysine) (GO-PLL) deposited on cationic liposomes encapsulating doxorubicin. Various concentrations of GO and GO-PLL were examined and the optimal LBL Lipo-graph was found to have a particle size of 267.9 ± 13 nm, zeta potential of +43.9 ± 6.9 mV and encapsulation efficiency of 86.4 ± 4.7%. The morphology of LBL Lipo-graph was examined by cryogenic-transmission electron microscopy (Cryo-TEM), atomic force microcopy (AFM) and scanning electron microscopy (SEM). The buildup of LBL Lipo-graph was confirmed via ultraviolet-visible (UV-Vis) spectrophotometry, thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) analysis. Infra-red (IR) response suggests that four layers are sufficient to induce a gel-to-liquid phase transition in response to near infra-red (NIR) laser irradiation. Light-matter interaction of LBL Lipo-graph was studied by calculating the absorption cross section in the frequency domain by utilizing Fourier analysis. Drug release assay indicates that the LBL Lipo-graph releases much faster in an acidic environment than a liposome control. A cytotoxicity assay was conducted to prove the efficacy of LBL Lipo-graph to destroy MD-MB-231 cells in response to NIR laser emission. Also, image stream flow cytometry and two photon microcopy provide supportive data for the potential application of LBL Lipo-graph for photothermal therapy. Study results suggest the novel dual-sensitive nanoparticles allow intracellular doxorubin delivery and respond to either acidic environments or NIR excitation. Stimuli sensitive hybrid nanoparticles have been synthesized using a layer-by-layer technique and demonstrated for dual chemo-photothermal destruction of breast cancer cells. The hybrid nanoparticles are composed of alternating layers of graphene oxide and graphene oxide conjugated poly-l-lysine coating the surface of a thermosensitive cationic liposome containing doxorubicin as a core. Data suggests that the hybrid nanoparticles may offer many advantages for chemo-photothermal therapy. Advantages include a decrease of the initial burst release which may result in the reduction in systemic toxicity, increase in pH responsivity around the tumor environment and improved NIR light absorption. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

NASA Astrophysics Data System (ADS)

Didden, Arjen; Hillebrand, Philipp; Wollgarten, Markus; Dam, Bernard; van de Krol, Roel

2016-02-01

Conductive TiN shells have been deposited on SiO2 nanoparticles (10-20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of powder. TEM and XPS analysis showed that all particles were coated with homogeneous shells containing titanium. Due to the large specific surface area of the nanoparticles, the TiN shells rapidly oxidize upon exposure to air. Electrical measurements show that the partially oxidized shells are conducting, with apparent resistivity of approximately 11 kΩ cm. The resistivity of the powders is strongly influenced by the NH3 dose, with a smaller dose giving an order-of-magnitude higher resistivity.

The Effect of Fatty Acids to Protect Forward Osmosis Membranes from Damage

NASA Technical Reports Server (NTRS)

Romero Mangado, Jaione; Parodi, Jurek; Stefanson, Ofir; Lathrop, Cooper; Lewis, Madeleine; Ferrara, Alessandro; Tatum, Simone; Flynn, Michael

2017-01-01

NASA has conducted research and development on forward osmosis (FO) membranes for wastewater reclamation in space since 1993. The lessons learned during operation of the International Space Station and FO based technologies on the ground taught us that reliability is a key limitation. Membranes are susceptible to organic fouling, oxidation and calcium scaling, and these factors tend to damage the membrane reducing their operating life and performance. The development of a Synthetic Biological Membrane (SBM), a membrane that mimics naturally occurring biological processes, will mitigate membrane damage and improve reliability. The SBM is a lipid-based membrane with a protective fatty acid layer configured for use in a FO water purification system. In this configuration, the protective layer on the surface of the lipid membrane is composed of fatty acids (FA). The FA interact with the chemicals found in the wastewater feed, and protect the membrane from damage. In this study, we conducted preliminary experiments to determine the feasibility of using fatty acids to alleviate damage from calcium scaling, oxidation and organic fouling.

Liquid metals as ultra-stretchable, soft, and shape reconfigurable conductors

NASA Astrophysics Data System (ADS)

Eaker, Collin B.; Dickey, Michael D.

2015-05-01

Conventional, rigid materials remain the key building blocks of most modern electronic devices, but they are limited in their ability to conform to curvilinear surfaces. It is possible to make electronic components that are flexible and in some cases stretchable by utilizing thin films, engineered geometries, or inherently soft and stretchable materials that maintain their function during deformation. Here, we describe the properties and applications of a micromoldable liquid metal that can form conductive components that are ultra-stretchable, soft, and shape-reconfigurable. This liquid metal is a gallium-based alloy with low viscosity and high conductivity. The metal develops spontaneously a thin, passivating oxide layer on the surface that allows the metal to be molded into non-spherical shapes, including films and wires, and patterned by direct-write techniques or microfluidic injection. Furthermore, unlike mercury, the liquid metal has low toxicity and negligible vapor pressure. This paper discusses the mechanical and electrical properties of the metal in the context of electronics, and discusses how the properties of the oxide layer have been exploited for new patterning techniques that enable soft, stretchable and reconfigurable devices.

Role of solvent environments in single molecule conductance used insulator-modified mechanically controlled break junctions

NASA Astrophysics Data System (ADS)

Muthusubramanian, Nandini; Maity, Chandan; Galan Garcia, Elena; Eelkema, Rienk; Grozema, Ferdinand; van der Zant, Herre; Kavli Institute of Nanoscience Collaboration; Department of Chemical Engineering Collaboration

We present a method for studying the effects of polar solvents on charge transport through organic/biological single molecules by developing solvent-compatible mechanically controlled break junctions of gold coated with a thin layer of aluminium oxide using plasma enhanced atomic layer deposition (ALD). The optimal oxide thickness was experimentally determined to be 15 nm deposited at ALD operating temperature of 300°C which yielded atomically sharp electrodes and reproducible single-barrier tunnelling behaviour across a wide conductance range between 1 G0 and 10-7 G0. The insulator protected MCBJ devices were found to be effective in various solvents such as deionized water, phosphate buffered saline, methanol, acetonitrile and dichlorobenzene. The yield of molecular junctions using such insulated electrodes was tested by developing a chemical protocol for synthesizing an amphipathic form of oligo-phenylene ethynylene (OPE3-PEO) with thioacetate anchoring groups. This work has further applications in studying effects of solvation, dipole orientation and other thermodynamic interactions on charge transport. Eu Marie Curie Initial Training Network (ITN). MOLECULAR-SCALE ELECTRONICS: ``MOLESCO'' Project Number 606728.

High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorptionmore » fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.« less