Science.gov

Sample records for conduction band electron

  1. Electron paramagnetic resonance of conduction-band electrons in silicon

    NASA Astrophysics Data System (ADS)

    Young, C. F.; Poindexter, E. H.; Gerardi, G. J.; Warren, W. L.; Keeble, D. J.

    1997-06-01

    The g value of conduction-band electrons in silicon was properly determined by using electron paramagnetic resonance. A linear empirical relationship was first found between the g values and the thermal ionization energies of several well-known group-V substitutional shallow donors in silicon. An extrapolation of the empirical relation to zero ionization energy predicted the g value of conduction-band (CB) electrons, gCB=1.9995, which is slightly but definitely different from that of conduction electrons in the donor-impurity band of degenerate n-type silicon; although both g values have been tacitly accepted to be identical for nearly four decades. The prediction was directly verified by measuring the g value of CB electrons created either by thermal emission from shallow donors in phosphorus-doped silicon at T=125 K and by above-band-gap optical excitation in high-purity p-type silicon at T=3.5 K; the measured g value in both experiments was precisely gCB=1.9995(1). The empirical relation is still not theoretically explained.

  2. Electron charge densities at conduction-band edges of semiconductors

    SciTech Connect

    Richardson, S.L.; Cohen, M.L.; Louie, S.G.; Chelikowsky, J.R.

    1986-01-15

    We demonstrate that both the empirical pseudopotential method (EPM) and the linear combination of atomiclike orbitals (LCAO) approach are capable of producing consistent electronic charge distributions in a compound semiconductor. Since the EPM approach is known to produce total valence electron charge densities which compare well with experimental x-ray data (e.g., Si), this work serves as a further test for the LCAO method. In particular, the EPM scheme, which uses an extended plane-wave basis, and the LCAO scheme, which employs a localized Gaussian basis, are used, with the same empirical potential as input, to analyze both the total valence electron charge density and the charge density of the first conduction band at the GAMMA, L, and X k points of the Brillouin zone. These charge densities are decomposed into their s-, p-, and d-orbital contributions, and this information is used to interpret the differences in the topologies of the conduction bands at GAMMA, L, and X. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbations in compound semiconductors.

  3. Transient mid-IR study of electron dynamics in TiO2 conduction band.

    PubMed

    Sá, Jacinto; Friedli, Peter; Geiger, Richard; Lerch, Philippe; Rittmann-Frank, Mercedes H; Milne, Christopher J; Szlachetko, Jakub; Santomauro, Fabio G; van Bokhoven, Jeroen A; Chergui, Majed; Rossi, Michel J; Sigg, Hans

    2013-04-07

    The dynamics of TiO2 conduction band electrons were followed with a novel broadband synchrotron-based transient mid-IR spectroscopy setup. The lifetime of conduction band electrons was found to be dependent on the injection method used. Direct band gap excitation results in a lifetime of 2.5 ns, whereas indirect excitation at 532 nm via Ru-N719 dye followed by injection from the dye into TiO2 results in a lifetime of 5.9 ns.

  4. Observation of electron excitation into silicon conduction band by slow-ion surface neutralization

    NASA Astrophysics Data System (ADS)

    Shchemelinin, S.; Breskin, A.

    2017-03-01

    Bare reverse biased silicon photodiodes were exposed to 3 eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the incident ions and on other factors are qualitatively explained in the framework of Auger-type surface neutralization theory. Amplification of the ion-induced charge was observed with an avalanche photodiode under high applied bias. The observed effect can be considered as ion-induced internal potential electron emission into the conduction band of silicon. To the best of our knowledge, no experimental evidence of such effect was previously reported. Possible applications are discussed.

  5. Modeling the electronic properties of GaAs polytype nanostructures: Impact of strain on the conduction band character

    NASA Astrophysics Data System (ADS)

    Marquardt, Oliver; Ramsteiner, Manfred; Corfdir, Pierre; Geelhaar, Lutz; Brandt, Oliver

    2017-06-01

    We study the electronic properties of GaAs nanowires composed of both the zinc-blende and wurtzite modifications using a ten-band k .p model. In the wurtzite phase, two energetically close conduction bands are of importance for the confinement and the energy levels of the electron ground state. These bands form two intersecting potential landscapes for electrons in zinc-blende/wurtzite nanostructures. The energy difference between the two bands depends sensitively on strain, such that even small strains can reverse the energy ordering of the two bands. This reversal may already be induced by the non-negligible lattice mismatch between the two crystal phases in polytype GaAs nanostructures, a fact that was ignored in previous studies of these structures. We present a systematic study of the influence of intrinsic and extrinsic strain on the electron ground state for both purely zinc-blende and wurtzite nanowires as well as for polytype superlattices. The coexistence of the two conduction bands and their opposite strain dependence results in complex electronic and optical properties of GaAs polytype nanostructures. In particular, both the energy and the polarization of the lowest intersubband transition depends on the relative fraction of the two crystal phases in the nanowire.

  6. Electronic bands and optical conductivity of the Dzyaloshinsky-Moriya multiferroic Ba2CuGe2O7

    NASA Astrophysics Data System (ADS)

    Corasaniti, M.; Barone, P.; Nucara, A.; Ortolani, M.; Baldassarre, L.; Fittipaldi, R.; Granata, V.; Rocco, L.; Vecchione, A.; Mohamed, W. S.; Lorenzana, J.; Calvani, P.

    2017-08-01

    We have measured the reflectivity in the a b plane and along the c axis of a single crystal of the Dzyaloshinsky-Moriya multiferroic Ba2CuGe2O7 , from 20 to 300 K and from 700 to 24 000 cm-1. The resulting optical conductivity σ (ω ) has been compared with the results of calculations of its electronic band structure based on density functional theory (DFT). A broad midinfrared band, which in the a b plane strongly hardens for decreasing temperature, is consistent with d-d transitions of the Cu atom. A further electronic absorption, whose edge falls in the near infrared and has a strong O-p character, unusually softens with decreasing temperature by more than 0.15 eV, in both polarizations. Calculations show that the behavior with temperature of those electronic bands can be related to distortions of the CuO4 tetrahedra.

  7. Electron mean free path and conduction-band density-of-states in solid methane as determined from low-energy electron transmission experiments

    NASA Astrophysics Data System (ADS)

    Jay-Gerin, J.-P.; Plenkiewicz, B.; Plenkiewicz, P.; Perluzzo, G.; Sanche, L.

    1985-09-01

    Recently, Plenkiewicz et al. developed a theoretical model for analyzing the current I t transmitted by a thin dielectric film as a function of incident electron energy E. The purpose of this paper is to apply this model to the analysis of recent I t( E) results for solid methane. The analysis permits the determination of both the electron mean free path as a function of energy and the electronic conduction-band density-of-states in the quasi-elastic scattering region. The differences between our results and Kunz's solid methane band structure calculations are also discussed.

  8. Time-Resolved IR-Absorption Spectroscopy of Hot-Electron Dynamics in Satellite and Upper Conduction Bands in GaP

    NASA Technical Reports Server (NTRS)

    Cavicchia, M. A.; Alfano, R. R.

    1995-01-01

    The relaxation dynamics of hot electrons in the X6 and X7 satellite and upper conduction bands in GaP was directly measured by femtosecond UV-pump-IR-probe absorption spectroscopy. From a fit to the induced IR-absorption spectra the dominant scattering mechanism giving rise to the absorption at early delay times was determined to be intervalley scattering of electrons out of the X7 upper conduction-band valley. For long delay times the dominant scattering mechanism is electron-hole scattering. Electron transport dynamics of the upper conduction band of GaP has been time resolved.

  9. Electron scattering in the Δ{sub 1} model of the conduction band of germanium single crystals

    SciTech Connect

    Luniov, S. V. Burban, O. V.; Nazarchuk, P. F.

    2015-05-15

    Electron scattering in the possible Δ{sub 1} models of the conduction band in germanium crystals formed by hydrostatic or uniaxial pressure is investigated. On the basis of the theory of anisotropic scattering, the temperature dependences of the anisotropy parameter of the relaxation times and electron mobility for these models under conditions of scattering at impurity ions, as well as at acoustic and intervalley phonons are obtained. Analysis of the temperature dependences indicates that, in the temperature range of 77–300 K, intervalley scattering becomes substantial. Only for the Δ{sub 1} model formed by uniaxial pressure along the crystallographic direction [100], the electron scattering at intervalley phonons, which correspond to the g transitions, is minor with respect to scattering at acoustic phonons (the intravalley scattering) and impurity ions.

  10. Effect of energy band gap in graphene on negative refraction through the veselago lens and electron conductance

    NASA Astrophysics Data System (ADS)

    Dahal, Dipendra; Gumbs, Godfrey

    2017-01-01

    A remarkable property of intrinsic graphene is that upon doping, electrons and holes travel through the monolayer thick material with constant velocity which does not depend on energy up to about 0.3 eV (Dirac fermions), as though the electrons and holes are massless particles and antiparticles which move at the Fermi velocity vF. Consequently, there is Klein tunneling at a p-n junction, in which there is no backscattering at normal incidence of massless Dirac fermions. However, this process yielding perfect transmission at normal incidence is expected to be affected when the group velocity of the charge carriers is energy dependent and there is non-zero effective mass for the target particle. We investigate how away from normal incidence the combined effect of incident electron energy ɛ and band gap parameter Δ can determine whether a p-n junction would allow focusing of an electron beam by behaving like a Veselago lens with negative refractive index. We demonstrate that there is a specific region in ɛ - Δ space where the index of refraction is negative, i.e., where monolayer graphene behaves as a metamaterial. Outside this region, the refractive index may be positive or there may be no refraction at all. We compute the ballistic conductance across a p-n junction as a function of Δ and ɛ and compare our results with those for a single electrostatic potential barrier and multiple barriers.

  11. Effect of isopropyl alcohol on the surface localization and recombination of conduction-band electrons in Degussa P25 TiO sub 2. A pulse-radiolysis time-resolved microwave conductivity study. [Accelerated electrons

    SciTech Connect

    Warman, J.M.; Hass, M.P. de ); Pichat, P. ); Serpone, N. Concordia Univ., Montreal, Quebec )

    1991-10-31

    Conduction-band electrons, formed by pulse radiolysis of Degussa P25 TiO{sub 2} particles, have been monitored by time-resolved microwave conductivity and found to undergo equilibrium localization and eventual recombination at the particle surface. In the presence of isopropyl alcohol recombination is retarded due to surface hole scavenging. The particle bulk can then be pumped with mobile electrons, which survive for seconds.

  12. Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface

    NASA Astrophysics Data System (ADS)

    Komolov, A. S.; Lazneva, E. F.; Gerasimova, N. B.; Panina, Yu. A.; Baramygin, A. V.; Zashikhin, G. D.

    2016-06-01

    The results of the investigation of the electronic structure of the conduction band in the energy range 5-25 eV above the Fermi level E F and the interfacial potential barrier upon deposition of aziridinylphenylpyrrolofullerene (APP-C60) and fullerene (C60) films on the surface of the real germanium oxide ((GeO2)Ge) have been presented. The content of the oxide on the (GeO2)Ge surface has been determined using X-ray photoelectron spectroscopy. The electronic properties have been measured using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode. The regularities of the change in the fine structure of total current spectra (FSTCS) with an increase in the thickness of the APP-C60 and C60 coatings to 7 nm have been investigated. A comparison of the structures of the FSTCS maxima for the C60 and APP-C60 films has made it possible to reveal the energy range (6-10 eV above the Fermi level E F) in which the energy states are determined by both the π* and σ* states and the FSTCS spectra have different structures of the maxima for the APP-C60 and unsubstituted C60 films. The formation of the interfacial potential barrier upon deposition of APP-C60 and C60 on the (GeO2)Ge surface is accompanied by an increase in the work function of the surface E vac- E F by the value of 0.2-0.3 eV, which corresponds to the transfer of the electron density from the substrate to the organic films under investigation. The largest changes occur with an increase in the coating thickness to 3 nm, and with further deposition of APP-C60 and C60, the work function of the surface changes only slightly.

  13. Dual Character of the Electronic Structure of YBa2Cu4O8: The Conduction Bands of CuO2 Planes and CuO Chains

    NASA Astrophysics Data System (ADS)

    Kondo, T.; Khasanov, R.; Karpinski, J.; Kazakov, S. M.; Zhigadlo, N. D.; Ohta, T.; Fretwell, H. M.; Palczewski, A. D.; Koll, J. D.; Mesot, J.; Rotenberg, E.; Keller, H.; Kaminski, A.

    2007-04-01

    We use microprobe angle-resolved photoemission spectroscopy (μARPES) to separately investigate the electronic properties of CuO2 planes and CuO chains in the high temperature superconductor, YBa2Cu4O8. For the CuO2 planes, a two-dimensional (2D) electronic structure is observed and, in contrast to Bi2Sr2CaCu2O8+δ, the bilayer splitting is almost isotropic and 50% larger, which strongly suggests that bilayer splitting has no direct effect on the superconducting properties. In addition, the scattering rate for the bonding band is about 1.5 times stronger than the antibonding band and is independent of momentum. For the CuO chains, the electronic structure is quasi-one-dimensional and consists of a conduction and insulating band. Finally, we find that the conduction electrons are well confined within the planes and chains with a nontrivial hybridization.

  14. Gd3+ spin-lattice relaxation via multi-band conduction electrons in Y(1-x)Gd(x)In3: an electron spin resonance study.

    PubMed

    Cabrera-Baez, M; Iwamoto, W; Magnavita, E T; Osorio-Guillén, J M; Ribeiro, R A; Avila, M A; Rettori, C

    2014-04-30

    Interest in the electronic structure of the intermetallic compound YIn3 has been renewed with the recent discovery of superconductivity at T ∼ 1 K, which may be filamentary in nature. In this work we perform electron spin resonance (ESR) experiments on Gd(3+) doped YIn3 (Y1-xGdxIn3; 0.001 ⪅ x ⩽̸ 0.08), showing that the spin-lattice relaxation of the Gd(3+) ions, due to the exchange interaction between the Gd(3+) localized magnetic moment and the conduction electrons (ce), is processed via the presence of s-, p- and d-type ce at the YIn3 Fermi level. These findings are revealed by the Gd(3+) concentration dependence of the Korringa-like relaxation rate d(ΔH)/dT and g-shift (Δg = g - 1.993), that display bottleneck relaxation behavior for the s-electrons and unbottleneck behavior for the p- and d-electrons. The Korringa-like relaxation rates vary from 22(2) Oe/K for x ⪅ 0.001 to 8(2) Oe/K for x = 0.08 and the g-shift values change, respectively, from a positive Δg = +0.047(10) to a negative Δg = -0.008(4). Analysis in terms of a three-band ce model allows the extraction of the corresponding exchange interaction parameters Jfs, Jfp and Jfd.

  15. Dual character of the electronic structure in YBa2Cu4O8: conduction bands of CuO2 planes and CuO chains

    NASA Astrophysics Data System (ADS)

    Kaminski, A.; Kondo, T.; Khasanov, R.; Karpinski, J.; Kazakov, S. M.; Zhigadlo, N. D.; Ohta, T.; Fretwell, H. M.; Palczewski, A. D.; Koll, J. D.; Mesot, J.; Rotenberg, E.; Keller, H.

    2007-03-01

    We use microprobe Angle-Resolved Photoemission Spectroscopy (μARPES) to separately investigate the electronic properties of CuO2 planes and CuO chains in the high temperature superconductor, YBa2Cu4O8. In the CuO2 planes, a two dimensional (2D) electronic structure with nearly momentum independent bilayer splitting is observed. The splitting energy is 150 meV at (π,0), almost 50% larger than in Bi2Sr2CaCu2O8+δ and the electron scattering at the Fermi level in the bonding band is about 1.5 times stronger than in the antibonding band. The CuO chains have a quasi one dimensional (1D) electronic structure. We observe two 1D bands separated by ˜ 550meV: a conducting band and an insulating band with an energy gap of ˜240meV. We find that the conduction electrons are well confined within the planes and chains with a non-trivial hybridization.

  16. Electronic structures of filled tetrahedral semiconductors LiMgN and LiZnN: conduction band distortion

    NASA Astrophysics Data System (ADS)

    Yu, L. H.; Yao, K. L.; Liu, Z. L.

    2004-12-01

    The band structures of the filled tetrahedral semiconductors LiMgN and LiZnN, viewed as the zinc-blende (MgN) - and (ZnN) - lattices partially filled with He-like Li + ion interstitials, were studied using the full-potential linearized augmented plane wave method (FP-LAPW) within density functional theory. The conduction band distortions of LiMgN and LiZnN, compared to their “parent” zinc-blende analog AlN and GaN, are discussed. It was found that the insertion of Li + ions at the interstitial sites near the cation or anion pushes the conduction band minimum of the X point in the Brillouin zone upward, relative to that of the Γ point, for both (MgN) - and (ZnN) - lattices (the valence band maximum is at Γ for AlN, GaN, LiMgN, and LiZnN), which provides a method to convert a zinc-blende indirect gap semiconductor into a direct gap material, but the conduction band distortion of the β phase (Li + near the cation) is quite stronger than that of the α phase (Li + near the anion). The total energy calculations show the α phase to be more stable than the β phase for both LiMgN and LiZnN. The Li-N and Mg-N bonds exhibit a strong ionic character, whereas the Zn-N bond has a strong covalent character in LiMgN and LiZnN.

  17. Processable Electronically Conducting Polymers

    DTIC Science & Technology

    1991-01-01

    is also evident in the electronic spectra of the polymer as the (CH)x formed in this manner has a band gap (absorption onset) at -1.9 eV (650 nm) and...an absorption maximum at 2.8 eV (440 nm) (compared to a band gap of 1.4 eV (885 nm) for Shirakawa (CH)x). As is the case with Durham (CH)x, orientation...annulated ring system locks the polymer into a stable conformation, and thus the optical band gaps of the mono- and disubstituted species are at

  18. Conduction-band edge dependence of carbon-coated hematite stimulated extracellular electron transfer of Shewanella oneidensis in bioelectrochemical systems.

    PubMed

    Zhou, Shungui; Tang, Jiahuan; Yuan, Yong

    2015-04-01

    Bacteria-based bioelectrochemical systems (BESs) are promising technologies used for alternative energy generation, wastewater treatment, and environmental monitoring. However, their practical application is limited by the bioelectrode performance, mainly resulting from low extracellular electron transfer (EET) efficiency. In this study, a carbon-coated hematite (C/Hematite) electrode was successfully obtained by a green and solvent-free route, that is, heat treatment in an oxygen-rich environment using solid ferrocene as the precursor. The as-prepared C/Hematite electrode was evaluated as a high-performance electrode material in a Shewanella oneidensis-inoculated BES. The maximum biocurrent density of the Shewanella-attached C/Hematite electrode reached 0.22 ± 0.01 mA cm(-2), which is nearly 6-times higher than that of a bare carbon cloth (CC) electrode (0.036 ± 0.005 mA cm(-2)). Electrochemical measurements revealed that the enhanced conductivity and better energy matching between the outer membrane c-type cytochromes of S. oneidensis and the electrode contributed to the improved EET efficiency. The results of this study demonstrated that the semiconductive properties of iron oxides play important roles for the involved bacterial extracellular respiration activities. Copyright © 2014 Elsevier B.V. All rights reserved.

  19. Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface

    NASA Astrophysics Data System (ADS)

    Komolov, A. S.; Lazneva, E. F.; Gerasimova, N. B.; Panina, Yu. A.; Baramygin, A. V.; Pshenichnyuk, S. A.

    2016-09-01

    The results of the investigation of the electronic structure of the conduction band and the interfacial potential barrier during the formation of interfaces of dioctyl-substituted perylenedicarboximide (PTCDI-C8) and diphenyl-substituted perylenedicarboximide (PTCDI-Ph) ultrathin films with the oxidized germanium surface have been presented. The experimental results have been obtained using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode at energies in the range from 5 to 20 eV above the Fermi level E F. The positions of the maxima of the fine structure of total current spectra (FSTCS) of the PTCDI-C8 and PTCDI-Ph films differ significantly in the energy range from 9 to 20 eV above the Fermi level E F, which can be associated with the difference between the substituents of the chosen molecules, dioctyl- and diphenyl-, respectively. At the same time, the positions of the lowenergy maxima in the FSTCS spectra at an energy 6-7 eV above the Fermi level E F for the PTCDI-C8 and PTCDI-Ph films almost coincide with each other. It has been suggested that these maxima are attributed to the electronic states of the perylene core of the molecules under investigation. The process of the formation of interfacial potential barriers of the PTCDI-C8 and PTCDI-Ph films with the oxidized germanium surface has been analyzed. It has been found that the work functions of the surface, E vac- E F, differ little from 4.6 ± 0.1 eV over the entire range of organic coating thicknesses from 0 to 6 nm.

  20. Conduction-band electronic states of YbInCu{sub 4} studied by photoemission and soft x-ray absorption spectroscopies

    SciTech Connect

    Utsumi, Yuki; Kurihara, Hidenao; Maso, Hiroyuki; Tobimatsu, Komei; Sato, Hitoshi; Shimada, Kenya; Namatame, Hirofumi; Hiraoka, Koichi; Kojima, Kenichi; Ohkochi, Takuo; Fujimori, Shin-ichi; Takeda, Yukiharu; Saitoh, Yuji; Mimura, Kojiro; Ueda, Shigenori; Yamashita, Yoshiyuki; Yoshikawa, Hideki; Kobayashi, Keisuke; Oguchi, Tamio; Taniguchi, Masaki

    2011-09-15

    We have studied conduction-band (CB) electronic states of a typical valence-transition compound YbInCu{sub 4} by means of temperature-dependent hard x-ray photoemission spectroscopy (HX-PES) of the Cu 2p{sub 3/2} and In 3d{sub 5/2} core states taken at h{nu}=5.95 keV, soft x-ray absorption spectroscopy (XAS) of the Cu 2p{sub 3/2} core absorption region around h{nu}{approx}935 eV, and soft x-ray photoemission spectroscopy (SX-PES) of the valence band at the Cu 2p{sub 3/2} absorption edge of h{nu}=933.0 eV. With decreasing temperature below the valence transition at T{sub V}=42 K, we have found that (1) the Cu 2p{sub 3/2} and In 3d{sub 5/2} peaks in the HX-PES spectra exhibit the energy shift toward the lower binding-energy side by {approx}40 and {approx}30 meV, respectively, (2) an energy position of the Cu 2p{sub 3/2} main absorption peak in the XAS spectrum is shifted toward higher photon-energy side by {approx}100 meV, with an appearance of a shoulder structure below the Cu 2p{sub 3/2} main absorption peak, and (3) an intensity of the Cu L{sub 3}VV Auger spectrum is abruptly enhanced. These experimental results suggest that the Fermi level of the CB-derived density of states is shifted toward the lower binding-energy side. We have described the valence transition in YbInCu{sub 4} in terms of the charge transfer from the CB to Yb 4f states.

  1. Conduction band valley splitting in Si

    NASA Astrophysics Data System (ADS)

    Klimeck, Gerhard; Boykin, T. B.; Eriksson, M.; Friesen, M.; Coppersmith, S. N.; von Allmen, P.; Oyafuso, F.; Lee, S.

    2004-03-01

    A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon nano-structures. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO using the empirical tight binding model sp^3d^5s. The tight binding parameters have been fitted to bulk bandstructure behavior of Si using a genetic algorithm. A 1-D quantum well simulation in NEMO shows the basic features of conduction band valley splitting as a coherent, confinement-induced phenomenon. No additional intervalley scattering parameters are needed. The splitting is in general nonzero even in the absence of electric field. The splitting oscillates as a function of N, the number of layers in the quantum well, with a period that is determined by the location of the valley minimum in the Brillouin zone. The envelope of the splitting decays as N^3. The qualitative physics remain the same irrespective of the details of the quantum well boundaries or the details of the strain treatment in the quantum well.

  2. Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    SciTech Connect

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-07-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0{le}x{le}1). The initial ({Gamma}) BEES thresholds for Al{sub x}Ga{sub 1{minus}x}As single barriers with 0{le}x{le}0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime ({ital x}{gt}0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al{sub x}Ga{sub 1{minus}x}As {ital X} valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al{sub x}Ga{sub 1{minus}x}As interface produces a significant fraction of this{ital X} valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al{sub x}Ga{sub 1{minus}x}As {Gamma}, {ital L}, and {ital X} points yields good agreement over the entire composition range. {copyright} {ital 1997} {ital The American Physical Society}

  3. Conductive nanomaterials for printed electronics.

    PubMed

    Kamyshny, Alexander; Magdassi, Shlomo

    2014-09-10

    This is a review on recent developments in the field of conductive nanomaterials and their application in printed electronics, with particular emphasis on inkjet printing of ink formulations based on metal nanoparticles, carbon nanotubes, and graphene sheets. The review describes the basic properties of conductive nanomaterials suitable for printed electronics (metal nanoparticles, carbon nanotubes, and graphene), their stabilization in dispersions, formulations of conductive inks, and obtaining conductive patterns by using various sintering methods. Applications of conductive nanomaterials for electronic devices (transparent electrodes, metallization of solar cells, RFID antennas, TFTs, and light emitting devices) are also briefly reviewed.

  4. Intensive Plasmonic Flash Light Sintering of Copper Nanoinks Using a Band-Pass Light Filter for Highly Electrically Conductive Electrodes in Printed Electronics.

    PubMed

    Hwang, Yeon-Taek; Chung, Wan-Ho; Jang, Yong-Rae; Kim, Hak-Sung

    2016-04-06

    In this work, an intensive plasmonic flash light sintering technique was developed by using a band-pass light filter matching the plasmonic wavelength of the copper nanoparticles. The sintering characteristics, such as resistivity and microstructure, of the copper nanoink films were studied as a function of the range of the wavelength employed in the flash white light sintering. The flash white light irradiation conditions (e.g., wavelength range, irradiation energy, pulse number, on-time, and off-time) were optimized to obtain a high conductivity of the copper nanoink films without causing damage to the polyimide substrate. The wavelength range corresponding to the plasmonic wavelength of the copper nanoparticles could efficiently sinter the copper nanoink and enhance its conductivity. Ultimately, the sintered copper nanoink films under optimal light sintering conditions showed the lowest resistivity (6.97 μΩ·cm), which was only 4.1 times higher than that of bulk copper films (1.68 μΩ·cm).

  5. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    NASA Astrophysics Data System (ADS)

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-09-01

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  6. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    SciTech Connect

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  7. Influence of strain on the conduction band structure of strained silicon nanomembranes.

    PubMed

    Euaruksakul, C; Li, Z W; Zheng, F; Himpsel, F J; Ritz, C S; Tanto, B; Savage, D E; Liu, X S; Lagally, M G

    2008-10-03

    The influence of in-plane biaxial strain on the conduction bands of Si is explored using elastically strained Si(001) nanomembranes and high-resolution x-ray absorption measurements with electron yield detection. The strain-induced splitting of the conduction band minimum and the energy shifts of two higher conduction bands near L1 and L3 are clearly resolved. The linear increase of the splitting of the conduction band minimum with increasing strain and the nonlinear shift of the L1 point toward the conduction band minimum agree quantitatively with current theories.

  8. Thermally conducting electron transfer polymers

    NASA Technical Reports Server (NTRS)

    Byrd, N. R.; Jenkins, R. K.; Lister, J. L.

    1969-01-01

    New polymeric material exhibits excellent physical shock protection, high electrical resistance, and thermal conductivity. It is especially useful for electronic circuitry, such as subminiaturization of components and modular construction of circuits.

  9. Reconstruction of the conduction band in metallic hydrogen sulfide

    SciTech Connect

    Kudryashov, N. A.; Kutukov, A. A.; Mazur, E. A.

    2016-09-15

    The theory of the normal properties of a metal generalized to the case of particular properties of an electron band with a finite width for electron–phonon systems with a varying electron density of states has been used to study the normal state of the SH{sub 3} phase of hydrogen sulfide at a pressure of 225 GPa and a temperature of 200 K. The frequency dependences of the real, ReΣ(ω), and imaginary, ImΣ(ω), parts of the selfenergy part of the Green’s function of the electron Σ(ω), as well as the electron density of states N(ε) of the Im–3m stable orthorhombic structure of SH{sub 3} hydrogen sulfide at a pressure of P = 225 GPa, which is renormalized by the strong electron–phonon coupling, have been calculated. It has been established that a part of the electron conduction band of the SH{sub 3} phase of hydrogen sulfide adjacent to the Fermi level undergoes renormalization-induced reconstruction in the form of a number of energy pockets with the widths equal to fractions of the characteristic phonon energies of the system.

  10. Change in optimum genetic algorithm solution with changing band discontinuities and band widths of electrically conducting copolymers

    NASA Astrophysics Data System (ADS)

    Kaur, Avneet; Bakhshi, A. K.

    2010-04-01

    The interest in copolymers stems from the fact that they present interesting electronic and optical properties leading to a variety of technological applications. In order to get a suitable copolymer for a specific application, genetic algorithm (GA) along with negative factor counting (NFC) method has recently been used. In this paper, we study the effect of change in the ratio of conduction band discontinuity to valence band discontinuity (Δ Ec/Δ Ev) on the optimum solution obtained from GA for model binary copolymers. The effect of varying bandwidths on the optimum GA solution is also investigated. The obtained results show that the optimum solution changes with varying parameters like band discontinuity and band width of constituent homopolymers. As the ratio Δ Ec/Δ Ev increases, band gap of optimum solution decreases. With increasing band widths of constituent homopolymers, the optimum solution tends to be dependent on the component with higher band gap.

  11. Electronically Conductive Composite Polymer Membranes.

    DTIC Science & Technology

    1985-09-20

    coats the individual fibers which make up the webs. Clearly, at this loading level ( 10 w/w S Nafion in the Gr), only a small fraction of the...NOO014-82K-0612 Task No. NR 627-838 cc TECHNICAL REPORT NO. 10 Mn Electronically Conductive Composite Polymer Membranes I- I by 0 Reginald M. Penner... 10 of Document Control Data - DO Form 1473. Copies of form available from cognizant contract administrator 85 IV, 03 O88 UNCLASSI FIED SECURITY

  12. Density of states in a two-dimensional electron gas: Impurity bands and band tails

    NASA Astrophysics Data System (ADS)

    Gold, A.; Serre, J.; Ghazali, A.

    1988-03-01

    We calculate the density of states of a two-dimensional electron gas in the presence of charged impurities within Klauder's best multiple-scattering approach. The silicon metal-oxide-semiconductor (MOS) system with impurities at the interface is studied in detail. The finite extension of the electron wave function into the bulk is included as well as various dependences of the density of states on the electron, the depletion, and the impurity densities. The transition from an impurity band at low impurity concentration to a band tail at high impurity concentration is found to take place at a certain impurity concentration. If the screening parameter of the electron gas is decreased, the impurity band shifts to lower energy. For low impurity density we find excited impurity bands. Our theory at least qualitatively explains conductivity and infrared-absorption experiments on impurity bands in sodium-doped MOS systems and deep band tails in the gap observed for high doping levels in these systems.

  13. Anisotropic electronic conduction in stacked two-dimensional titanium carbide

    PubMed Central

    Hu, Tao; Zhang, Hui; Wang, Jiemin; Li, Zhaojin; Hu, Minmin; Tan, Jun; Hou, Pengxiang; Li, Feng; Wang, Xiaohui

    2015-01-01

    Stacked two-dimensional titanium carbide is an emerging conductive material for electrochemical energy storage which requires an understanding of the intrinsic electronic conduction. Here we report the electronic conduction properties of stacked Ti3C2T2 (T = OH, O, F) with two distinct stacking sequences (Bernal and simple hexagonal). On the basis of first-principles calculations and energy band theory analysis, both stacking sequences give rise to metallic conduction with Ti 3d electrons contributing most to the conduction. The conduction is also significantly anisotropic due to the fact that the effective masses of carriers including electrons and holes are remarkably direction-dependent. Such an anisotropic electronic conduction is evidenced by the I−V curves of an individual Ti3C2T2 particulate, which demonstrates that the in-plane electrical conduction is at least one order of magnitude higher than that vertical to the basal plane. PMID:26548439

  14. Anisotropic electronic conduction in stacked two-dimensional titanium carbide

    NASA Astrophysics Data System (ADS)

    Hu, Tao; Zhang, Hui; Wang, Jiemin; Li, Zhaojin; Hu, Minmin; Tan, Jun; Hou, Pengxiang; Li, Feng; Wang, Xiaohui

    2015-11-01

    Stacked two-dimensional titanium carbide is an emerging conductive material for electrochemical energy storage which requires an understanding of the intrinsic electronic conduction. Here we report the electronic conduction properties of stacked Ti3C2T2 (T = OH, O, F) with two distinct stacking sequences (Bernal and simple hexagonal). On the basis of first-principles calculations and energy band theory analysis, both stacking sequences give rise to metallic conduction with Ti 3d electrons contributing most to the conduction. The conduction is also significantly anisotropic due to the fact that the effective masses of carriers including electrons and holes are remarkably direction-dependent. Such an anisotropic electronic conduction is evidenced by the I-V curves of an individual Ti3C2T2 particulate, which demonstrates that the in-plane electrical conduction is at least one order of magnitude higher than that vertical to the basal plane.

  15. Anisotropic electronic conduction in stacked two-dimensional titanium carbide.

    PubMed

    Hu, Tao; Zhang, Hui; Wang, Jiemin; Li, Zhaojin; Hu, Minmin; Tan, Jun; Hou, Pengxiang; Li, Feng; Wang, Xiaohui

    2015-11-09

    Stacked two-dimensional titanium carbide is an emerging conductive material for electrochemical energy storage which requires an understanding of the intrinsic electronic conduction. Here we report the electronic conduction properties of stacked Ti3C2T2 (T = OH, O, F) with two distinct stacking sequences (Bernal and simple hexagonal). On the basis of first-principles calculations and energy band theory analysis, both stacking sequences give rise to metallic conduction with Ti 3d electrons contributing most to the conduction. The conduction is also significantly anisotropic due to the fact that the effective masses of carriers including electrons and holes are remarkably direction-dependent. Such an anisotropic electronic conduction is evidenced by the I-V curves of an individual Ti3C2T2 particulate, which demonstrates that the in-plane electrical conduction is at least one order of magnitude higher than that vertical to the basal plane.

  16. Elucidation of band structure of charge storage in conducting polymers using a redox reaction.

    PubMed

    Contractor, Asfiya Q; Juvekar, Vinay A

    2014-07-01

    A novel technique to investigate charge storage characteristics of intrinsically conducting polymer films has been developed. A redox reaction is conducted on a polymer film on a rotating disk electrode under potentiostatic condition so that the rate of charging of the film equals the rate of removal of the charge by the reaction. The voltammogram obtained from the experiment on polyaniline film using Fe(2+)/Fe(3+) in HCl as the redox system shows five distinct linear segments (bands) with discontinuity in the slope at specific transition potentials. These bands are the same as those indicated by electron spin resonance (ESR)/Raman spectroscopy with comparable transition potentials. From the dependence of the slopes of the bands on concentration of ferrous and ferric ions, it was possible to estimate the energies of the charge carriers in different bands. The film behaves as a redox capacitor and does not offer resistance to charge transfer and electronic conduction.

  17. Electronic band structure of magnetic bilayer graphene superlattices

    SciTech Connect

    Pham, C. Huy; Nguyen, T. Thuong

    2014-09-28

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  18. Impurity levels, impurity bands, excited impurity bands, and band tails: The electronic density of states in quantum wells and heterostructures

    NASA Astrophysics Data System (ADS)

    Serre, J.; Ghazali, A.; Gold, A.

    1989-04-01

    We have investigated in quantum wells (QW's) and heterostructures (HS's) the modification of the electronic structure near the band edge, which is induced by selective doping. The density of states has been calculated as a function of the relevant parameters, namely, carrier and impurity concentrations (and depletion concentrations for HS's), QW width, and impurity position. Using a multiple-scattering method which includes a finite-range screened potential and impurity concentration to all orders, we have succeeded in obtaining ground-state and excited-state impurity bands (IB's). We observed these bands merging gradually with the lowest conduction subband as the impurity concentration is increased, leading to the formation of a band tail into the energy gap. Other main results obtained for different values of the parameters are the binding energy for a single impurity, the widths and energy shifts of ground- and excited-state IB's, and the contribution of the electron-impurity interaction to the gap shrinkage in the band-tail regime. Our results are compared with experiments and other theories.

  19. Electronic band structure of defect chalcopyrites

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaoshu; Lambrecht, Walter R. L.

    2001-03-01

    The defect chalcopyrites of chemical composition II-III-VI4 in which II, III and VI mean group-II elements such as Cd or Hg, group-III elements such as Al and Ga and group-VI elements such as S, Se, Te, form an interesting family of semiconductor compounds with potential nonlinear optical applications. They can be thought of as derived from the regular I-III-VI2 chalcopyrites by doubling the formula unit and replacing the group I element, for example, Ag by the group-II element and a vacancy in an ordered manner. The chalcopyrites themselves are derived from II-VI compounds by replacing the group-II by a group I and a group-III element. In this contribution we present electronic band structure calculations of some of these compounds, calculated using the linear muffin-tin orbital method combined with the local density functional approximation. We discuss the relation of the band structures of the corresponding zincblende, chalcopyrite and defect chalcopyrite compounds. In particular, the role of the group I or group II d-band energy will be shown to be important. The trends with chemical substutions and the effects of structural distortions c/a and internal parameters accompanying the chemical distortion will be discussed.

  20. Conduction band edge effective mass of La-doped BaSnO{sub 3}

    SciTech Connect

    James Allen, S. Law, Ka-Ming; Raghavan, Santosh; Schumann, Timo; Stemmer, Susanne

    2016-06-20

    BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

  1. Conduction band edge effective mass of La-doped BaSnO3

    NASA Astrophysics Data System (ADS)

    James Allen, S.; Raghavan, Santosh; Schumann, Timo; Law, Ka-Ming; Stemmer, Susanne

    2016-06-01

    BaSnO3 has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO3 thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

  2. Electronic structure of graphene: (Nearly) free electron bands versus tight-binding bands

    NASA Astrophysics Data System (ADS)

    Kogan, E.; Silkin, V. M.

    2017-09-01

    In our previous paper (Phys. Rev. B {\\bf 89}, 165430 (2014)) we have found that in graphene, in distinction to the four occupied bands, which can be described by the simple tight-binding model (TBM) with four atomic orbitals per atom, the two lowest lying at the $\\Gamma$-point unoccupied bands (one of them of a $\\sigma$ type and the other of a $\\pi$ type) can not be described by such model. In the present work we suggest a minimalistic model for these two bands, based on (nearly) free electrons model (FEM), which correctly describes the symmetry of these bands, their dispersion law and their localization with respect to the graphene plane.

  3. Anomalous electronic conductance in quasicrystals

    NASA Astrophysics Data System (ADS)

    Roche, Stephan; Moulopoulos, Konstantinos

    2000-03-01

    Subtle quantum interference effects in one-dimensional quasicrystals are reported. Quite opposite to their metallic counterparts, quasiperiodic systems are shown to exhibit interesting variations of their conducting properties upon disruption of their long-range order. A sudden phason change in the structure leads to a series of transitions that proceed from extremely simple and regular to highly complex self-similar resistive patterns.

  4. Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S2

    NASA Astrophysics Data System (ADS)

    Racke, David A.; Neupane, Mahesh R.; Monti, Oliver L. A.

    2016-02-01

    We present the momentum-resolved photoemission spectroscopy of both the valence and the conduction band region in the quasi-two-dimensional van der Waals-layered indirect band gap semiconductor Sn S2 . Using a combination of angle-resolved ultraviolet photoemission and angle-resolved two-photon photoemission (AR-2PPE) spectroscopy, we characterize the band structure of bulk Sn S2 . Comparison with density functional theory calculations shows excellent quantitative agreement in the valence band region and reveals several localized bands that likely originate from defects such as sulfur vacancies. Evidence for a moderate density of defects is also observed by AR-2PPE in the conduction band region, leading to localized bands not present in the computational results. The energetic structure and dispersion of the conduction bands is captured well by the computational treatment, with some quantitative discrepancies remaining. Our results provide a broader understanding of the electronic structure of Sn S2 in particular and van der Waals-layered semiconductors in general.

  5. Plasmon enhanced heterogeneous electron transfer with continuous band energy model

    NASA Astrophysics Data System (ADS)

    Zhao, Dandan; Niu, Lu; Wang, Luxia

    2017-08-01

    Photoinduced charge injection from a perylene dye molecule into the conduction band of a TiO2 system decorated by a metal nanoparticles (MNP) is studied theoretically. Utilizing the density matrix theory the charge transfer dynamics is analyzed. The continuous behavior of the TiO2 conduction band is accounted for by a Legendre polynomials expansion. The simulations consider optical excitation of the dye molecule coupled to the MNP and the subsequent electron injection into the TiO2 semiconductor. Due to the energy transfer coupling between the molecule and the MNP optical excitation and subsequent charge injection into semiconductor is strongly enhanced. The respective enhancement factor can reach values larger than 103. Effects of pulse duration, coupling strength and energetic resonances are also analyzed. The whole approach offers an efficient way to increase charge injection in dye-sensitized solar cells.

  6. Spin susceptibility of Anderson impurities in arbitrary conduction bands

    NASA Astrophysics Data System (ADS)

    Fang, Tie-Feng; Tong, Ning-Hua; Cao, Zhan; Sun, Qing-Feng; Luo, Hong-Gang

    2015-10-01

    Spin susceptibility of Anderson impurities is a key quantity in understanding the physics of Kondo screening. Traditional numerical renormalization group (NRG) calculation of the impurity contribution χimp to susceptibility, defined originally by Wilson in a flat wide band, has been generalized before to structured conduction bands. The results brought about non-Fermi-liquid and diamagnetic Kondo behaviors in χimp, even when the bands are not gapped at the Fermi energy. Here, we use the full density-matrix (FDM) NRG to present high-quality data for the local susceptibility χloc and to compare them with χimp obtained by the traditional NRG. Our results indicate that those exotic behaviors observed in χimp are unphysical. Instead, the low-energy excitations of the impurity in arbitrary bands only without gap at the Fermi energy are still a Fermi liquid and paramagnetic. We also demonstrate that unlike the traditional NRG yielding χloc less accurate than χimp, the FDM method allows a high-precision dynamical calculation of χloc at much reduced computational cost, with an accuracy at least one order higher than χimp. Moreover, artifacts in the FDM algorithm to χimp and origins of the spurious non-Fermi-liquid and diamagnetic features are clarified. Our work provides an efficient high-precision algorithm to calculate the spin susceptibility of impurity for arbitrary structured bands, while negating the applicability of Wilson's definition to such cases.

  7. Using Electronic Mail to Conduct Survey Research.

    ERIC Educational Resources Information Center

    Thach, Liz

    1995-01-01

    Describes public and private online networks and the characteristics of electronic mail. Reviews the literature on survey research conducted via electronic mail, and examines the issues of design, implementation, and response. A table displays advantages and disadvantages of electronic mail surveys. (AEF)

  8. Electronic materials with a wide band gap: recent developments

    PubMed Central

    Klimm, Detlef

    2014-01-01

    The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity. PMID:25295170

  9. The Electronic Thermal Conductivity of Graphene.

    PubMed

    Kim, Tae Yun; Park, Cheol-Hwan; Marzari, Nicola

    2016-04-13

    Graphene, as a semimetal with the largest known thermal conductivity, is an ideal system to study the interplay between electronic and lattice contributions to thermal transport. While the total electrical and thermal conductivity have been extensively investigated, a detailed first-principles study of its electronic thermal conductivity is still missing. Here, we first characterize the electron-phonon intrinsic contribution to the electronic thermal resistivity of graphene as a function of doping using electronic and phonon dispersions and electron-phonon couplings calculated from first-principles at the level of density-functional theory and many-body perturbation theory (GW). Then, we include extrinsic electron-impurity scattering using low-temperature experimental estimates. Under these conditions, we find that the in-plane electronic thermal conductivity κe of doped graphene is ∼300 W/mK at room temperature, independently of doping. This result is much larger than expected and comparable to the total thermal conductivity of typical metals, contributing ∼10% to the total thermal conductivity of bulk graphene. Notably, in samples whose physical or domain sizes are of the order of few micrometers or smaller, the relative contribution coming from the electronic thermal conductivity is more important than in the bulk limit, because lattice thermal conductivity is much more sensitive to sample or grain size at these scales. Last, when electron-impurity scattering effects are included we find that the electronic thermal conductivity is reduced by 30 to 70%. We also find that the Wiedemann-Franz law is broadly satisfied at low and high temperatures but with the largest deviations of 20-50% around room temperature.

  10. Optical conductivity of ABA stacked graphene trilayer: mid-IR resonance due to band nesting

    NASA Astrophysics Data System (ADS)

    Rashidian, Zeinab; Bludov, Yuliy V.; Ribeiro, Ricardo M.; Peres, N. M. R.; Vasilevskiy, Mikhail I.

    2014-10-01

    The band structure and the optical conductivity of an ABA (Bernal-type) stacked graphene trilayer are calculated. It is shown that, under appropriate doping, a strong resonant peak develops in the optical conductivity, located at the frequency corresponding to approximately 1.4 times the interlayer hopping energy and caused by the ‘nesting’ of two nearly parabolic bands in the electronic spectrum. The intensity of this resonant absorption can be controlled by adjusting the gate voltage. The effect is robust with respect to increasing temperature.

  11. Conducting polymers in electronic chemical sensors.

    PubMed

    Janata, Jiri; Josowicz, Mira

    2003-01-01

    Conducting organic polymers have found two main kinds of application in electronics so far: as materials for construction of various devices and as selective layers in chemical sensors. In either case, interaction with ambient gases is critical. It may compromise the performance of a device based on conducting polymers, whereas it is beneficial in a sensor. Conductivity has been the primary property of interest. Work function--related to conductivity, but in principle a different property--has received only scant attention. Our aim here is to discuss the usability of conducting polymers in both types of electronic applications in light of these two parameters.

  12. Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell.

    PubMed

    Martí, A; Antolín, E; Stanley, C R; Farmer, C D; López, N; Díaz, P; Cánovas, E; Linares, P G; Luque, A

    2006-12-15

    We present intermediate-band solar cells manufactured using quantum dot technology that show for the first time the production of photocurrent when two sub-band-gap energy photons are absorbed simultaneously. One photon produces an optical transition from the intermediate-band to the conduction band while the second pumps an electron from the valence band to the intermediate-band. The detection of this two-photon absorption process is essential to verify the principles of operation of the intermediate-band solar cell. The phenomenon is the cornerstone physical principle that ultimately allows the production of photocurrent in a solar cell by below band gap photon absorption, without degradation of its output voltage.

  13. Electronic structure of hydrogenated diamond: Microscopical insight into surface conductivity

    NASA Astrophysics Data System (ADS)

    Iacobucci, S.; Alippi, Paola; Calvani, P.; Girolami, M.; Offi, F.; Petaccia, L.; Trucchi, D. M.

    2016-07-01

    We have correlated the surface conductivity of hydrogen-terminated diamond to the electronic structure in the Fermi region. Significant density of electronic states (DOS) in proximity of the Fermi edge has been measured by photoelectron spectroscopy (PES) on surfaces exposed to air, corresponding to a p -type electric conductive regime, while upon annealing a depletion of the DOS has been achieved, resembling the diamond insulating state. The surface and subsurface electronic structure has been determined, exploiting the different probing depths of PES applied in a photon energy range between 7 and 31 eV. Ab initio density functional calculations including surface charge depletion and band-bending effects favorably compare with electronic states measured by angular-resolved photoelectron spectroscopy. Such states are organized in the energy-momentum space in a twofold structure: one, bulk-derived, band disperses in the Γ -X direction with an average hole effective mass of (0.43 ±0.02 ) m0 , where m0 is the bare electron mass; a second flatter band, with an effective mass of (2.2 ±0.9 ) m0 , proves that a hole gas confined in the topmost layers is responsible for the conductivity of the (2 ×1 ) hydrogen-terminated diamond (100 ) surface.

  14. Inter-Valence-Subband/Conduction-Band-Transport IR Detectors

    NASA Technical Reports Server (NTRS)

    Ting, David; Gunapala, Sarath; Bandara, Sumith

    2004-01-01

    Infrared (IR) detectors characterized by a combination of (1) high-quantum-efficiency photoexcitation of inter-valence-subband transitions of charge carriers and (2) high-mobility conduction- band transport of the thus-excited charge carriers have been proposed in an effort to develop focal-plane arrays of such devices for infrared imaging. Like many prior quantum-well infrared photodetectors (QWIPs), the proposed devices would be made from semiconductor heterostructures. In order to obtain the combination of characteristics mentioned above, the proposed devices would be designed and fabricated in novel InAs/GaSb superlattice configurations that would exploit a phenomenon known in the semiconductor art as type-II broken-gap band offset.

  15. Electronically conducting polymers with silver grains

    NASA Technical Reports Server (NTRS)

    Murphy, Oliver J. (Inventor); Hitchens, G. Duncan (Inventor); Hodko, Dolibor (Inventor)

    1999-01-01

    The present invention provides electronically conducting polymer films formed from photosensitive formulations of pyrrole and an electron acceptor that have been selectively exposed to UV light, laser light, or electron beams. The formulations may include photoinitiators, flexibilizers, solvents and the like. These solutions can be used in applications including printed circuit boards and through-hole plating and enable direct metallization processes on non-conducting substrates. After forming the conductive polymer patterns, a printed wiring board can be formed by sensitizing the polymer with palladium and electrolytically depositing copper.

  16. Intervalley separation in the conduction band of InGaAs measured by terahertz excitation spectroscopy

    SciTech Connect

    Molis, G.; Krotkus, A.; Vaicaitis, V.

    2009-03-02

    Spectral dependencies of terahertz radiation from the femtosecond laser-illuminated surfaces of Ga{sub x}In{sub 1-x}As (x=1, 0.8, and 0.47) have been investigated experimentally at high optical fluencies and laser wavelengths ranging from 600 to 800 nm. The terahertz pulse amplitude increased with the increasing laser photon energy due to larger excess energies of photoexcited electrons and more efficient spatial separation of electrons and holes at the illuminated surface. This increase was stopped with the onset of electron transitions to subsidiary conduction band valleys. Analysis of these experiments was used for evaluating the energy positions of the X and L conduction band valleys in Ga{sub x}In{sub 1-x}As alloys as a function of their composition.

  17. Conductivity measurements in a shear-banding wormlike micellar system

    NASA Astrophysics Data System (ADS)

    Photinos, Panos J.; López-González, M. R.; Hoven, Corey V.; Callaghan, Paul T.

    2010-07-01

    Shear banding in the cetylpyridinium chloride/sodium salicylate micellar system is investigated using electrical conductivity measurements parallel to the velocity and parallel to the vorticity in a cylindrical Couette cell. The measurements show that the conductivity parallel to the velocity (vorticity) increases (decreases) monotonically with applied shear rate. The shear-induced anisotropy is over one order of magnitude lower than the anisotropy of the Nc nematic phase. The steady-state conductivity measurements indicate that the anisotropy of the shear induced low-viscosity (high shear rate) phase is not significantly larger than the anisotropy of the high viscosity (low shear rate) phase. We estimate that the micelles in the shear induced low viscosity band are relatively short, with a characteristic length to diameter ratio of 5-15. The relaxation behavior following the onset of shear is markedly different above and below the first critical value γ˙1 , in agreement with results obtained by other methods. The transient measurements show that the overall anisotropy of the sample decreases as the steady state is approached, i.e., the micellar length/the degree of order decrease.

  18. Effects of electron-impurity scattering on density of states in silicene: Impurity bands and band-gap narrowing

    NASA Astrophysics Data System (ADS)

    Liu, S. Y.; Zeng, Y. C.; Lei, X. L.

    2016-12-01

    Considering the interband correlation, we present a generalized multiple-scattering approach of Green's function to investigate the effects of electron-impurity scattering on the density of states in silicene at zero temperature. The reduction of energy gaps in the case of relatively high chemical potential and the transformation of split-off impurity bands into band tails for low chemical potential are found. The dependency of optical conductivity on the impurity concentration is also discussed for frequency within the terahertz regime.

  19. Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy

    NASA Astrophysics Data System (ADS)

    Wang, Zefang; Zhao, Liang; Mak, Kin Fai; Shan, Jie

    2017-02-01

    We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe2, and parallel spins in monolayer MoSe2. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first principles calculations. These values also suggest that both n- and p-type WSe2 and MoSe2 can be relevant for spin- and valley-based applications

  20. Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy.

    PubMed

    Wang, Zefang; Zhao, Liang; Mak, Kin Fai; Shan, Jie

    2017-02-08

    We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe2 and parallel spins in monolayer MoSe2. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first-principles calculations. These values also suggest that both n- and p-type WSe2 and MoSe2 can be relevant for spin- and valley-based applications.

  1. Tunable Band Gap and Conductivity Type of ZnSe/Si Core-Shell Nanowire Heterostructures.

    PubMed

    Zeng, Yijie; Xing, Huaizhong; Fang, Yanbian; Huang, Yan; Lu, Aijiang; Chen, Xiaoshuang

    2014-10-31

    The electronic properties of zincblende ZnSe/Si core-shell nanowires (NWs) with a diameter of 1.1-2.8 nm are calculated by means of the first principle calculation. Band gaps of both ZnSe-core/Si-shell and Si-core/ZnSe-shell NWs are much smaller than those of pure ZnSe or Si NWs. Band alignment analysis reveals that the small band gaps of ZnSe/Si core-shell NWs are caused by the interface state. Fixing the ZnSe core size and enlarging the Si shell would turn the NWs from intrinsic to p-type, then to metallic. However, Fixing the Si core and enlarging the ZnSe shell would not change the band gap significantly. The partial charge distribution diagram shows that the conduction band maximum (CBM) is confined in Si, while the valence band maximum (VBM) is mainly distributed around the interface. Our findings also show that the band gap and conductivity type of ZnSe/Si core-shell NWs can be tuned by the concentration and diameter of the core-shell material, respectively.

  2. Tunable Band Gap and Conductivity Type of ZnSe/Si Core-Shell Nanowire Heterostructures

    PubMed Central

    Zeng, Yijie; Xing, Huaizhong; Fang, Yanbian; Huang, Yan; Lu, Aijiang; Chen, Xiaoshuang

    2014-01-01

    The electronic properties of zincblende ZnSe/Si core-shell nanowires (NWs) with a diameter of 1.1–2.8 nm are calculated by means of the first principle calculation. Band gaps of both ZnSe-core/Si-shell and Si-core/ZnSe-shell NWs are much smaller than those of pure ZnSe or Si NWs. Band alignment analysis reveals that the small band gaps of ZnSe/Si core-shell NWs are caused by the interface state. Fixing the ZnSe core size and enlarging the Si shell would turn the NWs from intrinsic to p-type, then to metallic. However, Fixing the Si core and enlarging the ZnSe shell would not change the band gap significantly. The partial charge distribution diagram shows that the conduction band maximum (CBM) is confined in Si, while the valence band maximum (VBM) is mainly distributed around the interface. Our findings also show that the band gap and conductivity type of ZnSe/Si core-shell NWs can be tuned by the concentration and diameter of the core-shell material, respectively. PMID:28788245

  3. Tuning the electronic band gap of graphene by oxidation

    SciTech Connect

    Dabhi, Shweta D.; Jha, Prafulla K.

    2015-06-24

    Using plane wave pseudo potential density functional theory, we studied the electronic properties of graphene with different C:O ratio. In this work, we discussed the changes that occur in electronic band structure of graphene functionalized with different amount of epoxy group. Electronic band gap depends on C:O ratio in graphene oxide containing epoxy group. The present work will have its implication for making devices with tunable electronic properties by oxidizing graphene.

  4. Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

    NASA Astrophysics Data System (ADS)

    Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2015-08-01

    The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔEC) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔEC of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination.

  5. Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

    PubMed Central

    Klein, Andreas; Körber, Christoph; Wachau, André; Säuberlich, Frank; Gassenbauer, Yvonne; Harvey, Steven P.; Proffit, Diana E.; Mason, Thomas O.

    2010-01-01

    Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides ZnO, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning. PMID:28883359

  6. Device Physics Analysis of Parasitic Conduction Band Barrier Formation in SiGe HBTs

    NASA Technical Reports Server (NTRS)

    Roenker, K. P.; Alterovitz, S. A.

    2000-01-01

    This paper presents a physics-based model describing the current-induced formation of a parasitic barrier in the conduction band at the base collector heterojunction in npn SiGe heterojunction bipolar transistors (HBTs). Due to the valence band discontinuity DELTA E(sub v), hole injection into the collector at the onset of base pushout is impeded, which gives rise to formation of a barrier to electron transport which degrades the device's high frequency performance. In this paper, we present results from an analytical model for the height of the barrier calculated from the device's structure as a function of the collector junction bias and collector current density.

  7. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental-Theoretical Study.

    PubMed

    Endres, James; Egger, David A; Kulbak, Michael; Kerner, Ross A; Zhao, Lianfeng; Silver, Scott H; Hodes, Gary; Rand, Barry P; Cahen, David; Kronik, Leeor; Kahn, Antoine

    2016-07-21

    We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.

  8. The determination of the conduction mechanism and optical band gap of fluorescein sodium salt

    NASA Astrophysics Data System (ADS)

    Yakuphanoglu, Fahrettin; Sekerci, Memet; Evin, Ertan

    2006-06-01

    The electrical conductivity and optical properties of fluorescein sodium salt in the temperature range of 295-370 K have been investigated. Various conduction models described in the literature were used to elucidate the charge transport mechanism of the compound. It is found that the charge transfer mechanism of the compound is understood in terms of grain boundary scattering. It can be evaluated that the obtained electronic parameters such as mobility, conductivity at room temperature, activation energy and optical band gap suggest that the compound is an organic semiconductor.

  9. Engineering the Electronic Band Structure for Multiband Solar Cells

    SciTech Connect

    Lopez, N.; Reichertz, L.A.; Yu, K.M.; Campman, K.; Walukiewicz, W.

    2010-07-12

    Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  10. Engineering the electronic band structure for multiband solar cells.

    PubMed

    López, N; Reichertz, L A; Yu, K M; Campman, K; Walukiewicz, W

    2011-01-14

    Using the unique features of the electronic band structure of GaN(x)As(1-x) alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  11. Convergence of electronic bands for high performance bulk thermoelectrics.

    PubMed

    Pei, Yanzhong; Shi, Xiaoya; LaLonde, Aaron; Wang, Heng; Chen, Lidong; Snyder, G Jeffrey

    2011-05-05

    Thermoelectric generators, which directly convert heat into electricity, have long been relegated to use in space-based or other niche applications, but are now being actively considered for a variety of practical waste heat recovery systems-such as the conversion of car exhaust heat into electricity. Although these devices can be very reliable and compact, the thermoelectric materials themselves are relatively inefficient: to facilitate widespread application, it will be desirable to identify or develop materials that have an intensive thermoelectric materials figure of merit, zT, above 1.5 (ref. 1). Many different concepts have been used in the search for new materials with high thermoelectric efficiency, such as the use of nanostructuring to reduce phonon thermal conductivity, which has led to the investigation of a variety of complex material systems. In this vein, it is well known that a high valley degeneracy (typically ≤6 for known thermoelectrics) in the electronic bands is conducive to high zT, and this in turn has stimulated attempts to engineer such degeneracy by adopting low-dimensional nanostructures. Here we demonstrate that it is possible to direct the convergence of many valleys in a bulk material by tuning the doping and composition. By this route, we achieve a convergence of at least 12 valleys in doped PbTe(1-x)Se(x) alloys, leading to an extraordinary zT value of 1.8 at about 850 kelvin. Band engineering to converge the valence (or conduction) bands to achieve high valley degeneracy should be a general strategy in the search for and improvement of bulk thermoelectric materials, because it simultaneously leads to a high Seebeck coefficient and high electrical conductivity.

  12. Topological Insulators: Electronic Band Structure and Spectroscopy

    NASA Astrophysics Data System (ADS)

    Palaz, S.; Koc, H.; Mamedov, A. M.; Ozbay, E.

    2017-02-01

    In this study, we present the results of our ab initio calculation of the elastic constants, density of states, charge density, and Born effective charge tensors for ferroelectric (rhombohedral) and paraelectric phases (cubic) of the narrow band ferroelectrics (GeTe, SnTe) pseudopotentials. The related quantities such as bulk modulus and shear modulus using obtained elastic constants have also been estimated in the present work. The total and partial densities of states corresponding to the band structure of Sn(Ge)Te(S,Se) were calculated. We also calculated the Born effective charge tensor of an atom (for instance, Ge, Sn, Te, etc.), which is defined as the induced polarization of the solid along the main direction by a unit displacement in the perpendicular direction of the sublattice of an atom at the vanishing electric field.

  13. Electronic band structure of surface-doped black phosphorus

    NASA Astrophysics Data System (ADS)

    Kim, Jimin; Ryu, Sae Hee; Sohn, Yeongsup; Kim, Keun Su

    2015-03-01

    There are rapidly growing interests in the study of few-layer black phosphorus owing to its promising device characteristics that may impact our future electronics technology. The low-energy band structure of black phosphorus has been widely predicted to be controllable by external perturbations, such as strain and doping. In this work, we attempt to control the electronic band structure of black phosphorous by in-situ surface deposition of alkali-metal atoms. We found that surface doping induces steep band bending towards the bulk, leading to the emergence of new 2D electronic states that are confined within only few phosphorene layers of black phosphorus. Using angle-resolved photoemission spectroscopy, we directly measured the electronic band structure and its evolution as a function of dopant density. Supported by IBS.

  14. Banded Electron Structure Formation in the Inner Magnetosphere

    NASA Technical Reports Server (NTRS)

    Liemohn, M. W.; Khazanov, G. V.

    1997-01-01

    Banded electron structures in energy-time spectrograms have been observed in the inner magnetosphere concurrent with a sudden relaxation of geomagnetic activity. In this study, the formation of these banded structures is considered with a global, bounce-averaged model of electron transport, and it is concluded that this structure is a natural occurrence when plasma sheet electrons are captured on closed drift paths near the Earth. These bands do not appear unless there is capture of plasma sheet electrons; convection along open drift paths making open pass around the Earth do not have time to develop this feature. The separation of high-energy bands from the injection population due to the preferential advection of the gradient-curvature drift creates spikes in the energy distribution, which overlap to form a series of bands in the energy spectrograms. The lowest band is the bulk of the injected population in the sub-key energy range. Using the Kp history for an observed banded structure event, a cloud of plasma sheet electrons is captured and the development of their distribution function is examined and discussed.

  15. Electrical conduction and band offsets in Si/HfxTi1-xO2/metal structures

    NASA Astrophysics Data System (ADS)

    Afanas'ev, V. V.; Stesmans, A.; Chen, F.; Li, M.; Campbell, S. A.

    2004-06-01

    The electron energy band alignment in the Si/HfxTi1-xO2/metal (Au,Al) structures is determined as a function of oxide composition using internal photoemission of electrons and photoconductivity measurements. For x⩽0.5 the electron excitations with thresholds corresponding to the band-gap width of amorphous TiO2 (4.4 eV) and HfO2 (5.6 and 5.9 eV) are observed at the same time, suggesting formation of TiO2- and HfO2-like subnetworks. With respect to the Fermi level of Au the conduction band of TiO2 appears to be 1.4 eV below the conduction band of HfO2 which indicates that the valence bands of the two oxides are nearly aligned. This significant downshift of the conduction band due to Ti incorporation leads to low barriers for electrons at the interfaces of HfxTi1-xO2 with Si and Al (˜1 eV or less) strongly impairing insulating properties of the oxide. Crystallization of TiO2 upon high-temperature annealing further enhances leakage currents because of a significantly lower band-gap width of crystallized TiO2 (3.1-3.4 eV).

  16. Electronic energy band structure of the double perovskite Ba2MnWO6.

    PubMed

    Fujioka, Yukari; Frantti, Johannes; Nieminen, Risto M

    2008-06-05

    The electronic and magnetic structures of the double perovskite oxide Ba 2MnWO6 (BMW) were determined by employing the density functional theory within the generalized gradient approximation (GGA) + U approach. BMW is considered a prototype double perovskite due to its high degree of B-site ordering and is a good case study for making a comparison between computations and experiments. By adjusting the U-parameter, the electronic energy band structure and magnetic properties, which were consistent with the experimental results, were obtained. These computations revealed that the valence bands are mainly formed from Mn 3d and O 2p states, while the conduction bands are derived from W 5d and O 2p states. The localized bands composed from Mn 3d states are located in the bandgap. The results imply that the formation of polarons in the conduction band initiate the resonance Raman modes observed as a series of equidistant peaks.

  17. Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy

    NASA Astrophysics Data System (ADS)

    Marcinkevičius, Saulius; Uždavinys, Tomas K.; Foronda, Humberto M.; Cohen, Daniel A.; Weisbuch, Claude; Speck, James S.

    2016-12-01

    Time-resolved transmission and reflection measurements were performed for bulk GaN at room temperature to evaluate the energy of the first conduction band satellite valley. The measurements showed clear threshold-like spectra for transmission decay and reflection rise times. The thresholds were associated with the onset of the intervalley electron scattering. Transmission measurements with pump and probe pulses in the near infrared produced an intervalley energy of 0.97 ±0.02 eV. Ultraviolet pump and infrared probe reflection provided a similar value. Comparison of the threshold energies obtained in these experiments allowed estimating the hole effective mass in the upper valence band to be 1.4 m0 . Modeling of the reflection transients with rate equations has allowed estimating electron-LO (longitudinal optical) phonon scattering rates and the satellite valley effective mass.

  18. V-band electronically reconfigurable metamaterial

    NASA Astrophysics Data System (ADS)

    Radisic, Vesna; Hester, Jimmy G.; Nguyen, Vinh N.; Caira, Nicholas W.; DiMarzio, Donald; Hilgeman, Theodore; Larouche, Stéphane; Kaneshiro, Eric; Gutierrez-Aitken, Augusto

    2017-04-01

    In this work, we report on a reconfigurable V-band metamaterial fabricated using an InP heterojunction bipolar transistor production process. As designed and fabricated, the implementation uses complementary split ring resonators (cSRRs) and Schottky diodes in both single unit cell and three unit cell monolithic microwave integrated circuits. Each unit cell has two diodes embedded within the gaps of the cSRRs. Reconfigurability is achieved by applying an external bias that turns the diodes on and off, which effectively controls the resonant property of the structure. In order to measure the metamaterial properties, the unit cells are fed and followed by transmission lines. Measured data show good agreement with simulations and demonstrate that the metamaterial structure exhibits resonance at around 65 GHz that can be switched on and off. The three-unit cell transmission line metamaterial shows a deeper resonance and a larger phase change than a single cell, as expected. These are the first reported reconfigurable metamaterials operating at the V-band using the InP high speed device fabrication process.

  19. Gigahertz-band electronically scanned antennas

    NASA Astrophysics Data System (ADS)

    Bei, Nikolai A.

    2000-12-01

    Foundation and principles of radio lenses construction of centimeter and millimeter wave ranges with controlled refracting index, combining the quality of phased array antennas with optical devices are stated. Possibilities of the electronically scanning with wide-angle sector and high gain are maintained. Construction principles of scanning antennas with controlled lenses, combining the quality of phased array antennas with optical devices, are stated. Possibilities of electronically scanning with broad angle sector and high gain are maintained. Some examples of construction of antennas millimeter range of waves are listed here.

  20. Electronic thermal conductivity of suspended graphene

    SciTech Connect

    Begum, K. Rizwana Sankeshwar, N. S.

    2014-04-24

    Electronic thermal conductivity, κ{sub e}, of suspended graphene is studied for 20KElectrons are assumed to be scattered by impurities, surface roughness, vacancies, inelastic optical phonons and in-plane and flexural acoustic phonons. Numerical calculations of κ{sub e}, as a function of temperature, are presented. At lower temperatures, κ{sub e}, is found to be determined mainly by vacancy (T<50K) and impurity (T<150K) scatterings. Flexural phonons influence κ{sub e} for T > 100K, becoming dominant for T > 250K. Good agreement with recent experimental data is obtained.

  1. Strain-driven electronic band structure modulation of si nanowires.

    PubMed

    Hong, Ki-Ha; Kim, Jongseob; Lee, Sung-Hoon; Shin, Jai Kwang

    2008-05-01

    One of the major challenges toward Si nanowire (SiNW) based photonic devices is controlling the electronic band structure of the Si nanowire to obtain a direct band gap. Here, we present a new strategy for controlling the electronic band structure of Si nanowires. Our method is attributed to the band structure modulation driven by uniaxial strain. We show that the band structure modulation with lattice strain is strongly dependent on the crystal orientation and diameter of SiNWs. In the case of [100] and [111] SiNWs, tensile strain enhances the direct band gap characteristic, whereas compressive strain attenuates it. [110] SiNWs have a different strain dependence in that both compressive and tensile strain make SiNWs exhibit an indirect band gap. We discuss the origin of this strain dependence based on the band features of bulk silicon and the wave functions of SiNWs. These results could be helpful for band structure engineering and analysis of SiNWs in nanoscale devices.

  2. Shape of impurity electronic absorption bands in nematic liquid crystal

    SciTech Connect

    Aver`yanov, E.M.

    1994-11-01

    The impurity-matrix anisotropic static intermolecular interactions, orientation-statistical properties, and electronic structure of uniaxial impurity molecules are shown to have a significant influence on spectral moments of the electronic absorption bands of impurities in the nematic liquid crystal. 14 refs., 3 figs.

  3. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Piccardo, Marco; Martinelli, Lucio; Iveland, Justin; Young, Nathan; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.; Weisbuch, Claude; Peretti, Jacques

    2014-06-01

    The position of the first satellite valley in wurtzite GaN is directly determined by near-band-gap photoemission spectroscopy of p-doped GaN activated to negative electron affinity. The photoemission spectra exhibit two structures, with fixed energy position, which originate from electrons accumulated in the conduction band valleys of the bulk material. We assigned the two observed features respectively to Γ and L valleys and obtain an intervalley energy separation of 0.90±0.08 eV, well below the theoretical values of the lowest subsidiary valley energy provided by ab initio calculations.

  4. Multiple Converged Conduction Bands in K2Bi8Se13: A Promising Thermoelectric Material with Extremely Low Thermal Conductivity.

    PubMed

    Pei, Yanling; Chang, Cheng; Wang, Zhe; Yin, Meijie; Wu, Minghui; Tan, Gangjian; Wu, Haijun; Chen, Yuexing; Zheng, Lei; Gong, Shengkai; Zhu, Tiejun; Zhao, Xinbing; Huang, Li; He, Jiaqing; Kanatzidis, Mercouri G; Zhao, Li-Dong

    2016-12-21

    We report that K2Bi8Se13 exhibits multiple conduction bands that lie close in energy and can be activated through doping, leading to a highly enhanced Seebeck coefficient and a high power factor with elevated temperature. Meanwhile, the large unit cell, complex low symmetry crystal structure, and nondirectional bonding lead to the very low lattice thermal conductivity of K2Bi8Se13, ranging between 0.42 and 0.20 W m(-1) K(-1) in the temperature interval 300-873 K. Experimentally, we further support the low thermal conductivity of K2Bi8Se13 using phonon velocity measurements; the results show a low average phonon velocity (1605 ms(-1)), small Young's modulus (37.1 GPa), large Grüneisen parameter (1.71), and low Debye temperature (154 K). A detailed investigation of the microstructure and defects was carried out using electron diffraction and transmission microscopy which reveal the presence of a K2.5Bi8.5Se14 minor phase intergrown along the side of the K2Bi8Se13 phase. The combination of enhanced power factor and low thermal conductivity results in a high ZT value of ∼1.3 at 873 K in electron doped K2Bi8Se13 material.

  5. Torque detected broad band electron spin resonance.

    PubMed

    El Hallak, Fadi; van Slageren, Joris; Dressel, Martin

    2010-09-01

    We present a novel technique to measure high frequency electron spin resonance spectra in a broad frequency range (30-1440 GHz) with high sensitivity. We use a quasioptical setup with tunable frequency sources to induce magnetic resonance transitions. These transitions are detected by measuring the change in the magnetic torque signal by means of cantilever torque magnetometry. The setup allows tuning of the frequency, magnetic field, polarization, and the angle between the sample and the external magnetic field. We demonstrate the capabilities of this technique by showing preliminary results obtained on a single crystal of an Fe(4) molecular nanomagnet.

  6. Model development for MODIS thermal band electronic cross-talk

    NASA Astrophysics Data System (ADS)

    Chang, Tiejun; Wu, Aisheng; Geng, Xu; Li, Yonghong; Brinkmann, Jake; Keller, Graziela; Xiong, Xiaoxiong (Jack)

    2016-10-01

    MODerate-resolution Imaging Spectroradiometer (MODIS) has 36 bands. Among them, 16 thermal emissive bands covering a wavelength range from 3.8 to 14.4 μm. After 16 years on-orbit operation, the electronic crosstalk of a few Terra MODIS thermal emissive bands develop substantial issues which cause biases in the EV brightness temperature measurements and surface feature contamination. The crosstalk effects on band 27 with center wavelength at 6.7 μm and band 29 at 8.5 μm increased significantly in recent years, affecting downstream products such as water vapor and cloud mask. The crosstalk issue can be observed from nearly monthly scheduled lunar measurements, from which the crosstalk coefficients can be derived. Most of MODIS thermal bands are saturated at moon surface temperatures and the development of an alternative approach is very helpful for verification. In this work, a physical model was developed to assess the crosstalk impact on calibration as well as in Earth view brightness temperature retrieval. This model was applied to Terra MODIS band 29 empirically for correction of Earth brightness temperature measurements. In the model development, the detector nonlinear response is considered. The impacts of the electronic crosstalk are assessed in two steps. The first step consists of determining the impact on calibration using the on-board blackbody (BB). Due to the detector nonlinear response and large background signal, both linear and nonlinear coefficients are affected by the crosstalk from sending bands. The crosstalk impact on calibration coefficients was calculated. The second step is to calculate the effects on the Earth view brightness temperature retrieval. The effects include those from affected calibration coefficients and the contamination of Earth view measurements. This model links the measurement bias with crosstalk coefficients, detector nonlinearity, and the ratio of Earth measurements between the sending and receiving bands. The correction

  7. Terra MODIS Band 27 Electronic Crosstalk Effect and Its Removal

    NASA Technical Reports Server (NTRS)

    Sun, Junqiang; Xiong, Xiaoxiong; Madhavan, Sriharsha; Wenny, Brian

    2012-01-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the NASA Earth Observing System (EOS). The first MODIS instrument was launched in December, 1999 on-board the Terra spacecraft. MODIS has 36 bands, covering a wavelength range from 0.4 micron to 14.4 micron. MODIS band 27 (6.72 micron) is a water vapor band, which is designed to be insensitive to Earth surface features. In recent Earth View (EV) images of Terra band 27, surface feature contamination is clearly seen and striping has become very pronounced. In this paper, it is shown that band 27 is impacted by electronic crosstalk from bands 28-30. An algorithm using a linear approximation is developed to correct the crosstalk effect. The crosstalk coefficients are derived from Terra MODIS lunar observations. They show that the crosstalk is strongly detector dependent and the crosstalk pattern has changed dramatically since launch. The crosstalk contributions are positive to the instrument response of band 27 early in the mission but became negative and much larger in magnitude at later stages of the mission for most detectors of the band. The algorithm is applied to both Black Body (BB) calibration and MODIS L1B products. With the crosstalk effect removed, the calibration coefficients of Terra MODIS band 27 derived from the BB show that the detector differences become smaller. With the algorithm applied to MODIS L1B products, the Earth surface features are significantly removed and the striping is substantially reduced in the images of the band. The approach developed in this report for removal of the electronic crosstalk effect can be applied to other MODIS bands if similar crosstalk behaviors occur.

  8. Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

    PubMed Central

    Zhu, Zhen; Shao, Hezhu; Dong, Xiao; Li, Ning; Ning, Bo-Yuan; Ning, Xi-Jing; Zhao, Li; Zhuang, Jun

    2015-01-01

    We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing. PMID:26012369

  9. Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon.

    PubMed

    Zhu, Zhen; Shao, Hezhu; Dong, Xiao; Li, Ning; Ning, Bo-Yuan; Ning, Xi-Jing; Zhao, Li; Zhuang, Jun

    2015-05-27

    We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing.

  10. Effects of Conductor Expressivity on Secondary School Band Members' Performance and Attitudes toward Conducting

    ERIC Educational Resources Information Center

    Silvey, Brian A.; Koerner, Bryan D.

    2016-01-01

    We investigated the effects of expressive and unexpressive conducting on secondary school band members' and experts' audio evaluations of band performance expressivity. A conductor, who demonstrated either expressive or unexpressive conducting techniques, led both an eighth-grade and a high school band in four separate "run-throughs" of…

  11. Model Development for MODIS Thermal Band Electronic Crosstalk

    NASA Technical Reports Server (NTRS)

    Chang, Tiejun; Wu, Aisheng; Geng, Xu; Li, Yonghonh; Brinkman, Jake; Keller, Graziela; Xiong, Xiaoxiong

    2016-01-01

    MODerate-resolution Imaging Spectroradiometer (MODIS) has 36 bands. Among them, 16 thermal emissive bands covering a wavelength range from 3.8 to 14.4 m. After 16 years on-orbit operation, the electronic crosstalk of a few Terra MODIS thermal emissive bands developed substantial issues that cause biases in the EV brightness temperature measurements and surface feature contamination. The crosstalk effects on band 27 with center wavelength at 6.7 m and band 29 at 8.5 m increased significantly in recent years, affecting downstream products such as water vapor and cloud mask. The crosstalk effect is evident in the near-monthly scheduled lunar measurements, from which the crosstalk coefficients can be derived. The development of an alternative approach is very helpful for independent verification.In this work, a physical model was developed to assess the crosstalk impact on calibration as well as in Earth view brightness temperature retrieval. This model was applied to Terra MODIS band 29 empirically to correct the Earth brightness temperature measurements. In the model development, the detectors nonlinear response is considered. The impact of the electronic crosstalk is assessed in two steps. The first step consists of determining the impact on calibration using the on-board blackbody (BB). Due to the detectors nonlinear response and large background signal, both linear and nonlinear coefficients are affected by the crosstalk from sending bands. The second step is to calculate the effects on the Earth view brightness temperature retrieval. The effects include those from affected calibration coefficients and the contamination of Earth view measurements. This model links the measurement bias with crosstalk coefficients, detector non-linearity, and the ratio of Earth measurements between the sending and receiving bands. The correction of the electronic cross talk can be implemented empirically from the processed bias at different brightness temperature. The implementation

  12. Electron energy band alignment at the (100)Si/MgO interface

    NASA Astrophysics Data System (ADS)

    Afanas'ev, V. V.; Stesmans, A.; Cherkaoui, K.; Hurley, P. K.

    2010-02-01

    The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37±0.05 eV above the top of the silicon valence band.

  13. Electronic valence bands in decagonal Al-Ni-Co

    NASA Astrophysics Data System (ADS)

    Theis, W.; Rotenberg, Eli; Franke, K. J.; Gille, P.; Horn, K.

    2003-09-01

    Valence-band photoemission from the s-p region of the tenfold and the two inequivalent twofold surfaces of quasicrystalline decagonal Al71.8Ni14.8Co13.4 reveals strongly dispersing bands. These exhibit a free-electron-like dispersion along quasiperiodic and periodic directions of the decagonal quasicrystal. The experimental photoemission maps are reproduced in detail by a model in which parabolic bands emanate from a set of reciprocal lattice vectors. A parity rule for the principal zone centers is observed.

  14. High Thermal Conductivity Graphite Electronic Components

    NASA Astrophysics Data System (ADS)

    Peck, S. O.; Young, G. L.; Mellberg, W. J.; Wellman, A. F.; Cooney, J. E.

    1996-08-01

    This project will apply high thermal conductivity graphite to three major spacecraft electronic components: (1) the thermal plane of a printed wiring board, (2) the subassembly or tray that holds the board, and (3) the equipment panel that the tray mounts on. The complete heat transfer path from chip level heat source to radiative rejection on the exterior surface of the equipment panel will therefore be addressed. Thermal and structural requirements representative of current spacecraft will drive an optimized solution strategy. The project will be completed by fabricating the three prototypical test articles and measuring their performance in a representative space environment.

  15. Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap

    NASA Astrophysics Data System (ADS)

    Yesilyurt, Can; Siu, Zhuo Bin; Tan, Seng Ghee; Liang, Gengchiau; Jalil, Mansoor B. A.

    2017-06-01

    We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barriers. In the presence of both electric and magnetic barriers, we found that a large conductance gap can be produced with the aid of tilted energy dispersion without a band gap. The origin of this effect is the shift of the electron wave-vector at barrier boundaries caused by (i) the pseudo-magnetic field induced by electrical potential, i.e., a newly discovered feature that is only possible in the materials possessing tilted energy dispersion, (ii) the real magnetic field induced by a ferromagnetic layer deposited on the top of the system. We use a realistic barrier structure applicable in current nanotechnology and analyze the temperature dependence of the tunneling conductance. The new approach presented here may resolve a major problem of possible transistor applications in topological semimetals, i.e., the absence of normal backscattering and gapless band structure.

  16. Band warping, band non-parabolicity, and Dirac points in electronic and lattice structures

    NASA Astrophysics Data System (ADS)

    Resca, Lorenzo; Mecholsky, Nicholas A.; Pegg, Ian L.

    2017-10-01

    We illustrate at a fundamental level the physical and mathematical origins of band warping and band non-parabolicity in electronic and vibrational structures. We point out a robust presence of pairs of topologically induced Dirac points in a primitive-rectangular lattice using a p-type tight-binding approximation. We analyze two-dimensional primitive-rectangular and square Bravais lattices with implications that are expected to generalize to more complex structures. Band warping is shown to arise at the onset of a singular transition to a crystal lattice with a larger symmetry group, which allows the possibility of irreducible representations of higher dimensions, hence band degeneracy, at special symmetry points in reciprocal space. Band warping is incompatible with a multi-dimensional Taylor series expansion, whereas band non-parabolicities are associated with multi-dimensional Taylor series expansions to all orders. Still band non-parabolicities may merge into band warping at the onset of a larger symmetry group. Remarkably, while still maintaining a clear connection with that merging, band non-parabolicities may produce pairs of conical intersections at relatively low-symmetry points. Apparently, such conical intersections are robustly maintained by global topology requirements, rather than any local symmetry protection. For two p-type tight-binding bands, we find such pairs of conical intersections drifting along the edges of restricted Brillouin zones of primitive-rectangular Bravais lattices as lattice constants vary relatively to each other, until these conical intersections merge into degenerate warped bands at high-symmetry points at the onset of a square lattice. The conical intersections that we found appear to have similar topological characteristics as Dirac points extensively studied in graphene and other topological insulators, even though our conical intersections have none of the symmetry complexity and protection afforded by the latter more

  17. Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions.

    PubMed

    Chen, I-Ju; Lehmann, Sebastian; Nilsson, Malin; Kivisaari, Pyry; Linke, Heiner; Dick, Kimberly A; Thelander, Claes

    2017-02-08

    Although zinc-blende (ZB) and wurtzite (WZ) structures differ only in the atomic stacking sequence, mixing of crystal phases can strongly affect the electronic properties, a problem particularly common to bottom up-grown nanostructures. A lack of understanding of the nature of electronic transport at crystal phase junctions thus severely limits our ability to develop functional nanowire devices. In this work we investigated electron transport in InAs nanowires with designed mixing of crystal structures, ZB/WZ/ZB, by temperature-dependent electrical measurements. The WZ inclusion gives rise to an energy barrier in the conduction band. Interpreting the experimental result in terms of thermionic emission and using a drift-diffusion model, we extracted values for the WZ/ZB band offset, 135 ± 10 meV, and interface sheet polarization charge density on the order of 10(-3) C/m(2). The extracted polarization charge density is 1-2 orders of magnitude smaller than previous experimental results, but in good agreement with first principle calculation of spontaneous polarization in WZ InAs. When the WZ length is reduced below 20 nm, an effective barrier lowering is observed, indicating the increasing importance of tunneling transport. Finally, we found that band-bending at ZB/WZ junctions can lead to bound electron states within an enclosed WZ segment of sufficient length, evidenced by our observation of Coulomb blockade at low temperature. These findings provide critical input for modeling and designing the electronic properties of novel functional devices, such as nanowire transistors, where crystal polytypes are commonly found.

  18. Effects of Conducting-Gesture Instruction on Seventh-Grade Band Students' Performance Response to Conducting Emblems.

    ERIC Educational Resources Information Center

    Cofer, R. Shayne

    1998-01-01

    Investigates effects of short-term conducting gesture instruction on seventh-grade band students' recognition of and performance response to musical conducting gestures. Indicates that short-term conducting-gesture instruction has a positive, statistically significant impact on recognition of and performance response to conducting gestures.…

  19. Enhancing the conductivity of molecular electronic devices

    NASA Astrophysics Data System (ADS)

    Stuyver, Thijs; Fias, Stijn; De Proft, Frank; Geerlings, Paul; Tsuji, Yuta; Hoffmann, Roald

    2017-03-01

    We show in this work that conjugated π -electron molecular chains can, in quite specific and understood circumstances, become more conductive the longer they get, in contradiction to what would be expected intuitively. The analysis, done in the framework of the source and sink potential method, and supported by detailed transmission calculations, begins by defining "relative transmission," an inherent measure of molecular conduction. This, in turn, for conjugated hydrocarbons, is related to a simple molecular orbital expression—the ratio of secular determinants of a molecule and one where the electrode contacts are deleted—and a valence bond idea, since these secular determinants can alternatively be expressed in terms of Kekulé structures. A plausible argument is given for relating the relative transmission to the weight of the diradical resonance structures in the resonance hybrid for a molecule. Chemical intuition can then be used to tune the conductivity of molecules by "pushing" them towards more or less diradical character. The relationship between relative transmission (which can rise indefinitely) and molecular transmission is carefully analyzed—there is a sweet spot here for engineering molecular devices. These new insights enable the rationalization of a wide variety of experimental and theoretical results for π-conjugated alternant hydrocarbons, especially the striking difference between extended oligophenylenes and related quinoid chains. In this context, oligo-p-phenylene macrocycles emerge as a potential molecular switch.

  20. Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

    SciTech Connect

    Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2015-08-17

    The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE{sub C}) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE{sub C} of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination.

  1. Effects of Conducting Plane on Band and Choral Musicians' Perceptions of Conductor and Ensemble Expressivity

    ERIC Educational Resources Information Center

    Silvey, Brian A.; Fisher, Ryan A.

    2015-01-01

    The purpose of this study was to examine whether one aspect of conducting technique, the conducting plane, would affect band and/or choral musicians' perceptions of conductor and ensemble expressivity. A band and a choral conductor were each videotaped conducting 1-min excerpts from Morten Lauridsen's "O Magnum Mysterium" while using a…

  2. Effects of Conducting Plane on Band and Choral Musicians' Perceptions of Conductor and Ensemble Expressivity

    ERIC Educational Resources Information Center

    Silvey, Brian A.; Fisher, Ryan A.

    2015-01-01

    The purpose of this study was to examine whether one aspect of conducting technique, the conducting plane, would affect band and/or choral musicians' perceptions of conductor and ensemble expressivity. A band and a choral conductor were each videotaped conducting 1-min excerpts from Morten Lauridsen's "O Magnum Mysterium" while using a…

  3. Spin-resolved conductance of Dirac electrons through multibarrier arrays

    NASA Astrophysics Data System (ADS)

    Dahal, Dipendra; Gumbs, Godfrey; Iurov, Andrii

    We use a transfer matrix method to calculate the transmission coefficient of Dirac electrons through an arbitrary number of square potential barrier in gapped monolayer graphene(MLG) and bilayer graphene (BLG). The widths of barriers may not be chosen equal. The shift in the angle of incidence and the width of the barrier required for resonance are investigated numerically for both MLG and BLG. We compare the effects due to energy gap on these two transmission coefficient for each of these two structures (MLG and BLG). We present our results as functions of barrier width, height as well as incoming electron energy as well as band gap and examine the conditions for which perfect reflection or transmission occurs. Our transmission data are further used to calculate conductivity.

  4. Control of valence and conduction band energies in layered transition metal phosphates via surface functionalization.

    PubMed

    Lentz, Levi C; Kolb, Brian; Kolpak, Alexie M

    2016-05-18

    Layered transition metal phosphates and phosphites (TMPs) are a class of materials composed of layers of 2D sheets bound together via van der Waals interactions and/or hydrogen bonds. Explored primarily for use in proton transfer, their unique chemical tunability also makes TMPs of interest for forming large-scale hybrid materials. Further, unlike many layered materials, TMPs can readily be solution exfoliated to form single 2D sheets or bilayers, making them exciting candidates for a variety of applications. However, the electronic properties of TMPs have largely been unstudied to date. In this work, we use first-principles computations to investigate the atomic and electronic structure of TMPs with a variety of stoichiometries. We demonstrate that there exists a strong linear relationship between the band gap and the ionic radius of the transition metal cation in these materials, and show that this relationship, which opens opportunities for engineering new compositions with a wide range of band gaps, arises from constraints imposed by the phosphorus-oxygen bond geometry. In addition, we find that the energies of the valence and conduction band edges can be systematically tuned over a range of ∼3 eV via modification of the functional group extending from the phosphorus. Based on the Hammett constant of this functional group, we identify a simple, predictive relationship for the ionization potential and electron affinity of layered TMPs. Our results thus provide guidelines for systematic design of TMP-derived functional materials, which may enable new approaches for optimizing charge transfer in electronics, photovoltaics, electrocatalysts, and other applications.

  5. Engineering flat electronic bands in quasiperiodic and fractal loop geometries

    NASA Astrophysics Data System (ADS)

    Nandy, Atanu; Chakrabarti, Arunava

    2015-11-01

    Exact construction of one electron eigenstates with flat, non-dispersive bands, and localized over clusters of various sizes is reported for a class of quasi-one-dimensional looped networks. Quasiperiodic Fibonacci and Berker fractal geometries are embedded in the arms of the loop threaded by a uniform magnetic flux. We work out an analytical scheme to unravel the localized single particle states pinned at various atomic sites or over clusters of them. The magnetic field is varied to control, in a subtle way, the extent of localization and the location of the flat band states in energy space. In addition to this we show that an appropriate tuning of the field can lead to a re-entrant behavior of the effective mass of the electron in a band, with a periodic flip in its sign.

  6. Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

    SciTech Connect

    Keleş, Ümit; Çakan, Aslı; Bulutay, Ceyhun

    2015-02-14

    We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.

  7. XANES: observation of quantum confinement in the conduction band of colloidal PbS quantum dots

    NASA Astrophysics Data System (ADS)

    Demchenko, I. N.; Chernyshova, M.; He, X.; Minikayev, R.; Syryanyy, Y.; Derkachova, A.; Derkachov, G.; Stolte, W. C.; Piskorska-Hommel, E.; Reszka, A.; Liang, H.

    2013-04-01

    The presented investigations aimed at development of inexpensive method for synthesized materials suitable for utilization of solar energy. This important issue was addressed by focusing, mainly, on electronic local structure studies with supporting x-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis of colloidal galena nano-particles (NPs) and quantum dots (QDs) synthesized using wet chemistry under microwave irradiation. Performed x-ray absorption near edge structure (XANES) analysis revealed an evidence of quantum confinement for the sample with QDs, where the bottom of the conduction band was shifted to higher energy. The QDs were found to be passivated with oxides at the surface. Existence of sulfate/sulfite and thiosulfate species in pure PbS and QDs, respectively, was identified.

  8. Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

    NASA Astrophysics Data System (ADS)

    Keleş, Ümit; ćakan, Aslı; Bulutay, Ceyhun

    2015-02-01

    We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.

  9. Formation of a protected sub-band for conduction in quantum point contacts under extreme biasing.

    PubMed

    Lee, J; Han, J E; Xiao, S; Song, J; Reno, J L; Bird, J P

    2014-02-01

    Managing energy dissipation is critical to the scaling of current microelectronics and to the development of novel devices that use quantum coherence to achieve enhanced functionality. To this end, strategies are needed to tailor the electron-phonon interaction, which is the dominant mechanism for cooling non-equilibrium ('hot') carriers. In experiments aimed at controlling the quantum state, this interaction causes decoherence that fundamentally disrupts device operation. Here, we show a contrasting behaviour, in which strong electron-phonon scattering can instead be used to generate a robust mode for electrical conduction in GaAs quantum point contacts, driven into extreme non-equilibrium by nanosecond voltage pulses. When the amplitude of these pulses is much larger than all other relevant energy scales, strong electron-phonon scattering induces an attraction between electrons in the quantum-point-contact channel, which leads to the spontaneous formation of a narrow current filament and to a renormalization of the electronic states responsible for transport. The lowest of these states coalesce to form a sub-band separated from all others by an energy gap larger than the source voltage. Evidence for this renormalization is provided by a suppression of heating-related signatures in the transient conductance, which becomes pinned near 2e(2)/h (e, electron charge; h, Planck constant) for a broad range of source and gate voltages. This collective non-equilibrium mode is observed over a wide range of temperature (4.2-300 K) and may provide an effective means to manage electron-phonon scattering in nanoscale devices.

  10. Conductance statistics for the power-law banded random matrix model

    SciTech Connect

    Martinez-Mendoza, A. J.; Mendez-Bermudez, J. A.; Varga, Imre

    2010-12-21

    We study numerically the conductance statistics of the one-dimensional (1D) Anderson model with random long-range hoppings described by the Power-law Banded Random Matrix (PBRM) model. Within a scattering approach to electronic transport, we consider two scattering setups in absence and presence of direct processes: 2M single-mode leads attached to one side and to opposite sides of 1D circular samples. For both setups we show that (i) the probability distribution of the logarithm of the conductance T behaves as w(lnT){proportional_to}T{sup M2/2}, for T<<, for both the critical and the non-critical samples; and (ii) at criticality there is a smooth crossover from localized-like to delocalized-like behavior in the transport properties of the PBRM model by decreasing the fractality of its eigenstates.

  11. Electron scattering off the ground-state band and the. gamma. band in sup 150 Nd

    SciTech Connect

    Sandor, R.K.J.; Blok, H.P.; Garg, U.; Girod, M.; Harakeh, M.N.; de Jager, C.W.; de Vries, H. Service de Physique et Techniques Nucleaires, Commissariat a l'Energie Atomique, Bruyeres-le-Chatel, Boite Postale 12, F-91680 Bruyeres-le-Chatel, France Nationaal Instituut voor Kernfysica en Hoge-Energiefysica, sectie K , P.O. Box 4395, 1009AJ Amsterdam, The Netherlands Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556)

    1991-05-01

    Inelastic electron scattering to levels of the ground-state band and the {gamma} band in {sup 150}Nd was studied in a momentum transfer range of 0.5 to 2.8 fm{sup {minus}1}. The extracted transition charge densities were compared to microscopic Hartree-Fock-Boguliubov calculations. The overall agreement between the data and the calculations is good, indicating that the dynamic properties of the rotational collective degrees of freedom in statically deformed nuclei can be well described in this microscopic model.

  12. Correlation effects and electronic properties of Cr-substituted SZn with an intermediate band.

    PubMed

    Tablero, C

    2005-09-15

    A study using first principles of the electronic properties of S32Zn31Cr, a material derived from the SZn host semiconductor where a Cr atom has been substituted for each of the 32 Zn atoms, is presented. This material has an intermediate band sandwiched between the valence and conduction bands of the host semiconductor, which in a formal band-theoretic picture is metallic because the Fermi energy is located within the impurity band. The potential technological application of these materials is that when they are used to absorb photons in solar cells, the efficiency increases significantly with respect to the host semiconductor. An analysis of the gaps, bandwidths, density of states, total and orbital charges, and electronic density is carried out. The main effects of the local-density approximation with a Hubbard term corrections are an increase in the bandwidth, a modification of the relative composition of the five d and p transition-metal orbitals, and a splitting of the intermediate band. The results demonstrate that the main contribution to the intermediate band is the Cr atom. For values of U greater than 6 eV, where U is the empirical Hubbard term U parameter, this band is unfolded, thus creating two bands, a full one below the Fermi energy and an empty one above it, i.e., a metal-insulator transition.

  13. Electron phonon effects on the direct band gap in semiconductors: LCAO calculations

    NASA Astrophysics Data System (ADS)

    Olguín, D.; Cardona, M.; Cantarero, A.

    2002-06-01

    Using a perturbative treatment of the electron-phonon interaction, we have studied the effect of phonons on the direct band gap of conventional semiconductors. Our calculations are performed in the framework of the tight-binding linear combination of atomic orbitals (LCAO) approach. Within this scheme we have calculated the temperature and isotopic mass dependence of the lowest direct band gap of several semiconductors with diamond and zincblende structure. Our results reproduce the overall trend of available experimental data for the band gap as a function of temperature, as well as give correctly the mass dependence of the band gap on isotopic. A calculation of conduction band intervalley deformation potentials is also reported. Finally, calculated Debye-Waller factors are compared with X-ray and EXAFS experimental results.

  14. Electronic transitions in GdN band structure

    SciTech Connect

    Vidyasagar, R. Kita, T.; Sakurai, T.; Ohta, H.

    2014-05-28

    Using the near-infrared (NIR) absorbance spectroscopy, electronic transitions and spin polarization of the GdN epitaxial film have been investigated; and the GdN epitaxial film was grown by a reactive rf sputtering technique. The GdN film exhibited three broad bands in the NIR frequency regimes; and those bands are attributable primarily to the minority and majority spin transitions at the X-point and an indirect transition along the Γ-X symmetric direction of GdN Brillouin zone. We experimentally observe a pronounced red-shift of the indirect band gap when cooling down below the Curie temperature which is ascribed to the orbital-dependent coulomb interactions of Gd-5dxy electrons, which tend to push-up the N-2p bands. On the other hand, we have evaluated the spin polarization of 0.17 (±0.005), which indicates that the GdN epitaxial film has almost 100% spin-polarized carriers. Furthermore, the experimental result of GdN electronic transitions are consistent with the previous reports and are thus well-reproduced. The Arrott plots evidenced that the Curie temperature of GdN film is 36 K and the large spin moment is explained by the nitrogen vacancies and the intra-atomic exchange interaction.

  15. Electronic band structure and phonons in V2O5

    NASA Astrophysics Data System (ADS)

    Bhandari, Churna; Lambrecht, Walter R. L.

    2013-03-01

    Among the vanadium oxides, V2O5 presents special interest as a layered material. As for other layered materials, it is of interest to search for changes in its electronic structure and phonon spectrum in the monolayer modification of this material. For example, reduced screening may modify phonon modes affected by long-range Coulomb interactions. As a preliminary we here present a first-principles study of the bulk electronic band structure and the phonons at the Γ-point. Density functional calculations in the local density approximation were carried out for the electronic band structure and the density functional perturbation method was used for the phonon calculations. We used LDA and norm-conserving pseudopotentials in the abinit code. A group theoretical analysis is used to label the phonon modes. Non-analyticity is included for the LO modes. The band structures are in good agreement with previous work and yield an indirect band gap. Relaxed structural properties are also in good agreement with experiment. Simulated infrared and Raman spectra will be presented. Our results will be compared with experimental and previous theoretical work.

  16. Enlarged band gap and electron switch in graphene-based step-barrier structure

    SciTech Connect

    Lu, Wei-Tao Ye, Cheng-Zhi; Li, Wen

    2013-11-04

    We study the transmission through a step-barrier in gapped graphene and propose a method to enlarge the band gap. The step-barrier structure consists of two or more barriers with different strengths. It is found that the band gap could be effectively enlarged and controlled by adjusting the barrier strengths in the light of the mass term. Klein tunneling at oblique incidence is suppressed due to the asymmetry of step-barrier, contrary to the cases in single-barrier and superlattices. Furthermore, a tunable conductance channel could be opened up in the conductance gap, suggesting an application of the structure as an electron switch.

  17. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental–Theoretical Study

    PubMed Central

    2016-01-01

    We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites. PMID:27364125

  18. The electronic structures of vanadate salts: Cation substitution as a tool for band gap manipulation

    NASA Astrophysics Data System (ADS)

    Dolgos, Michelle R.; Paraskos, Alexandra M.; Stoltzfus, Matthew W.; Yarnell, Samantha C.; Woodward, Patrick M.

    2009-07-01

    The electronic structures of six ternary metal oxides containing isolated vanadate ions, Ba 3(VO 4) 2, Pb 3(VO 4) 2, YVO 4, BiVO 4, CeVO 4 and Ag 3VO 4 were studied using diffuse reflectance spectroscopy and electronic structure calculations. While the electronic structure near the Fermi level originates largely from the molecular orbitals of the vanadate ion, both experiment and theory show that the cation can strongly influence these electronic states. The observation that Ba 3(VO 4) 2 and YVO 4 have similar band gaps, both 3.8 eV, shows that cations with a noble gas configuration have little impact on the electronic structure. Band structure calculations support this hypothesis. In Pb 3(VO 4) 2 and BiVO 4 the band gap is reduced by 0.9-1.0 eV through interactions of (a) the filled cation 6 s orbitals with nonbonding O 2 p states at the top of the valence band, and (b) overlap of empty 6 p orbitals with antibonding V 3 d-O 2 p states at the bottom of the conduction band. In Ag 3VO 4 mixing between filled Ag 4 d and O 2 p states destabilizes states at the top of the valence band leading to a large decrease in the band gap ( Eg=2.2 eV). In CeVO 4 excitations from partially filled 4 f orbitals into the conduction band lower the effective band gap to 1.8 eV. In the Ce 1-xBi xVO 4 (0≤ x≤0.5) and Ce 1-xY xVO 4 ( x=0.1, 0.2) solid solutions the band gap narrows slightly when Bi 3+ or Y 3+ are introduced. The nonlinear response of the band gap to changes in composition is a result of the localized nature of the Ce 4 f orbitals.

  19. Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Du, Mao-Hua

    2015-05-01

    Bulk semiconductors and insulators typically have continuous valence and conduction bands. Here, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs2NaInBr6 , Cs2NaBiCl6 , and Tl2NaBiCl6 . The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs2NaInBr6 as an example to show that the narrow bands can stabilize self-trapped and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. These characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.

  20. Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

    DOE PAGES

    Shi, Hongliang; Du, Mao-Hua

    2015-05-12

    Bulk semiconductors and insulators typically have continuous valence and conduction bands. In this paper, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs2NaInBr6, Cs2NaBiCl6, and Tl2NaBiCl6. The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs2NaInBr6 as an example to show that the narrow bands can stabilize self-trappedmore » and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. Finally, these characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.« less

  1. Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

    SciTech Connect

    Shi, Hongliang; Du, Mao-Hua

    2015-05-12

    Bulk semiconductors and insulators typically have continuous valence and conduction bands. In this paper, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs2NaInBr6, Cs2NaBiCl6, and Tl2NaBiCl6. The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs2NaInBr6 as an example to show that the narrow bands can stabilize self-trapped and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. Finally, these characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.

  2. Effect of conduction band non-parabolicity on the optical gain of quantum cascade lasers based on the effective two-band finite difference method

    NASA Astrophysics Data System (ADS)

    Cho, Gookbin; Kim, Jungho

    2017-09-01

    We theoretically investigate the effect of conduction band non-parabolicity (NPB) on the optical gain spectrum of quantum cascade lasers (QCLs) using the effective two-band finite difference method. Based on the effective two-band model to consider the NPB effect in the multiple quantum wells (QWs), the wave functions and confined energies of electron states are calculated in two different active-region structures, which correspond to three-QW single-phonon and four-QW double-phonon resonance designs. In addition, intersubband optical dipole moments and polar-optical-phonon scattering times are calculated and compared without and with the conduction band NPB effect. Finally, the calculation results of optical gain spectra are compared in the two QCL structures having the same peak gain wavelength of 8.55 μm. The gain peaks are greatly shifted to longer wavelengths and the overall gain magnitudes are slightly reduced when the NPB effect is considered. Compared with the three-QW active-region design, the redshift of the peak gain is more prominent in the four-QW active-region design, which makes use of higher electronic states for the lasing transition.

  3. Conduction band population in graphene in ultrashort strong laser field: Case of massive Dirac particles

    NASA Astrophysics Data System (ADS)

    Ahmadi, Z.; Goudarzi, H.; Jafari, A.

    2016-05-01

    The Dirac-like quasiparticles in honeycomb graphene lattice are taken to possess a non-zero effective mass. The charge carriers involve to interact with a femtosecond strong laser pulse. Due to the scattering time of electrons in graphene (τ ≈10-100 fs), the one femtosecond optical pulse is used to establish the coherence effect and, consequently, it can be realized to use the time-dependent Schrödinger equation for electron coupled with strong electromagnetic field. Generalized wave vector of relativistic electrons interacting with electric field of laser pulse causes to obtain a time-dependent electric dipole matrix element. Using the coupled differential equations of a two-state system of graphene, the density of probability of population transition between valence (VB) and conduction bands (CB) of gapped graphene is calculated. In particular, the effect of bandgap energy on dipole matrix elements at the Dirac points and resulting CB population (CBP) is investigated. The irreversible electron dynamics is achieved when the optical pulse end. Increasing the energy gap of graphene results in decreasing the maximum CBP.

  4. Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

    SciTech Connect

    Li, Wei; Zhang, Qin; Kirillov, Oleg A.; Levin, Igor; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V. E-mail: liangxl@pku.edu.cn; Bijesh, R.; Datta, S.; Liang, Yiran; Peng, Lian-Mao; Liang, Xuelei E-mail: liangxl@pku.edu.cn

    2014-11-24

    We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.

  5. Electron-beam irradiation induced conductivity in ZnS nanowires as revealed by in situ transmission electron microscope

    NASA Astrophysics Data System (ADS)

    Liu, Baodan; Bando, Yoshio; Wang, Mingsheng; Zhi, Chunyi; Fang, Xiaosheng; Tang, Chengchun; Mitome, Masanori; Golberg, Dmitri

    2009-08-01

    Electron transport variations in individual ZnS nanowires synthesized through a chemical vapor deposition process were in situ studied in transmission electron microscope under convergent electron-beam irradiation (EBI). It was found that the transport can dramatically be enhanced using proper irradiation conditions. The conductivity mechanism was revealed based on a detailed study of microstructure and composition evolutions under irradiation. EBI-induced Zn-rich domains' appearance and related O doping were mainly responsible for the conductivity improvements. First-principles theoretical calculations additionally indicated that the generation of midbands within a ZnS band gap might also contribute to the improved conductivity.

  6. Concerning the Optical Absorption Band of the Hydrated Electron,

    DTIC Science & Technology

    methylene blue ) showed marked nonlinear absorption due to saturation of optical transitions, no such change was observed for hydrated electrons even though the light intensity was varied by > 10 to the 7th power up to 200 photons per hydrated electron per sq cm. Consequently the photoexcited state lifetime is estimated to be than 6 x 10 to the -12th power sec. This finding is discussed briefly in terms of three possible origins for the absorption band, namely that involving excitation to a bound excited state, as a photoionization efficiency profile or as a distribution

  7. Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide.

    PubMed

    Lebens-Higgins, Z; Scanlon, D O; Paik, H; Sallis, S; Nie, Y; Uchida, M; Quackenbush, N F; Wahila, M J; Sterbinsky, G E; Arena, Dario A; Woicik, J C; Schlom, D G; Piper, L F J

    2016-01-15

    We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO_{3}, using hard x-ray photoelectron spectroscopy. We determine that the band gap renormalization is almost entirely associated with the evolution of the conduction band. Our experimental results are supported by hybrid density functional theory supercell calculations. We determine that unlike conventional TCOs where interactions with the dopant orbitals are important, the band gap renormalization in La-BaSnO_{3} is driven purely by electrostatic interactions.

  8. Electronic- and band-structure evolution in low-doped (Ga,Mn)As

    SciTech Connect

    Yastrubchak, O.; Gluba, L.; Żuk, J.; Sadowski, J.; Krzyżanowska, H.; Domagala, J. Z.; Andrearczyk, T.; Wosinski, T.

    2013-08-07

    Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.

  9. Revisiting the Valence and Conduction Band Size Dependence of PbS Quantum Dot Thin Films

    SciTech Connect

    Miller, Elisa M.; Kroupa, Daniel M.; Zhang, Jianbing; Schulz, Philip; Marshall, Ashley R.; Kahn, Antoine; Lany, Stephan; Luther, Joseph M.; Beard, Matthew C.; Perkins, Craig L.; van de Lagemaat, Jao

    2016-03-22

    We use a high signal-to-noise X-ray photoelectron spectrum of bulk PbS, GW calculations, and a model assuming parabolic bands to unravel the various X-ray and ultraviolet photoelectron spectral features of bulk PbS as well as determine how to best analyze the valence band region of PbS quantum dot (QD) films. X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) are commonly used to probe the difference between the Fermi level and valence band maximum (VBM) for crystalline and thin-film semiconductors. However, we find that when the standard XPS/UPS analysis is used for PbS, the results are often unrealistic due to the low density of states at the VBM. Instead, a parabolic band model is used to determine the VBM for the PbS QD films, which is based on the bulk PbS experimental spectrum and bulk GW calculations. Our analysis highlights the breakdown of the Brillioun zone representation of the band diagram for large band gap, highly quantum confined PbS QDs. We have also determined that in 1,2-ethanedithiol-treated PbS QD films the Fermi level position is dependent on the QD size; specifically, the smallest band gap QD films have the Fermi level near the conduction band minimum and the Fermi level moves away from the conduction band for larger band gap PbS QD films. This change in the Fermi level within the QD band gap could be due to changes in the Pb:S ratio. In addition, we use inverse photoelectron spectroscopy to measure the conduction band region, which has similar challenges in the analysis of PbS QD films due to a low density of states near the conduction band minimum.

  10. Ab initio electronic structure and optical conductivity of bismuth tellurohalides

    NASA Astrophysics Data System (ADS)

    Schwalbe, Sebastian; Wirnata, René; Starke, Ronald; Schober, Giulio A. H.; Kortus, Jens

    2016-11-01

    We investigate the electronic structure, dielectric, and optical properties of bismuth tellurohalides BiTe X (X =I , Cl, Br) by means of all-electron density functional theory. In particular, we present the ab initio conductivities and dielectric tensors calculated over a wide frequency range, and compare our results with the recent measurements by Akrap et al. [Phys. Rev. B 90, 035201 (2014), 10.1103/PhysRevB.90.035201], Makhnev et al. [Opt. Spectrosc. 117, 764 (2014), 10.1134/S0030400X14110125], and Rusinov et al. [JETP Lett. 101, 507 (2015), 10.1134/S0021364015080147]. We show how the low-frequency branch of the optical conductivity can be used to identify characteristic intra- and interband transitions between the Rashba spin-split bands in all three bismuth tellurohalides. We further calculate the refractive indices and dielectric constants, which in turn are systematically compared to previous predictions and measurements. We expect that our quantitative analysis will contribute to the general assessment of bulk Rashba materials for their potential use in spintronics devices.

  11. Microstructure and electronic band structure of pulsed laser deposited iron fluoride thin film for battery electrodes.

    PubMed

    Santos-Ortiz, Reinaldo; Volkov, Vyacheslav; Schmid, Stefan; Kuo, Fang-Ling; Kisslinger, Kim; Nag, Soumya; Banerjee, Rajarshi; Zhu, Yimei; Shepherd, Nigel D

    2013-04-10

    Battery electrodes in thin-film form are free of the binders used with traditional powder electrodes and present an ideal platform to obtain basic insight to the evolution of the electrode-electrolyte interface passivation layer, the formation of secondary phases, and the structural underpinnings of reversibility. This is particularly relevant to the not yet fully understood conversion electrode materials, which possess enormous potential for providing transformative capacity improvements in next-generation lithium-ion batteries. However, this necessitates an understanding of the electronic charge transport properties and band structure of the thin films. This work presents an investigation of the electron transport properties of iron fluoride (FeF2) thin-film electrodes for Li-ion batteries. FeF2 thin films were prepared by pulsed-laser deposition, and their phase purity was characterized by electron microscopy and diffraction. The grown materials are polycrystalline FeF2 with a P42/mnm crystallographic symmetry. Room-temperature Hall measurements reveal that as-deposited FeF2 is n-type: the Hall coefficients were negative, electron mobility was 0.33 cm2/(V s) and resistivity was 0.255 Ω cm. The electronic band diagram of FeF2 was obtained using a combination of ultraviolet photoelectron spectroscopy, photoluminescence, photoluminescence excitation and optical absorption, which revealed that FeF2 is a direct bandgap, n-type semiconductor whose band structure is characterized by a 3.4 eV bandgap, a workfunction of ∼4.51 eV, and an effective Fermi level that resides approximately 0.22 eV below the conduction band edge. We propose that the shallow donor levels at 0.22 eV are responsible for the measured n-type conductivity. The band diagram was used to understand electron transport in FeF2 thin film and FeF2-C composite electrodes.

  12. Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew M.; Allerman, Andrew A.

    2016-11-01

    Unintentionally doped (UID) AlGaN epilayers graded over Al compositions of 80%-90% and 80%-100% were grown by metal organic vapor phase epitaxy and were electrically characterized using contactless sheet resistance (Rsh) and capacitance-voltage (C-V) measurements. Strong electrical conductivity in the UID graded AlGaN epilayers resulted from polarization-induced doping and was verified by the low resistivity of 0.04 Ω cm for the AlGaN epilayer graded over 80%-100% Al mole fraction. A free electron concentration (n) of 4.8 × 1017 cm-3 was measured by C-V for Al compositions of 80%-100%. Average electron mobility ( μ ¯ ) was calculated from Rsh and n data for three ranges of Al composition grading, and it was found that UID AlGaN graded from 88%-96% had μ ¯ = 509 cm2/V s. The combination of very large band gap energy, high μ ¯ , and high n for UID graded AlGaN epilayers make them attractive as a building block for high voltage power electronic devices such as Schottky diodes and field effect transistors.

  13. Improved thermally conducting electron transfer polymers

    NASA Technical Reports Server (NTRS)

    Jenkins, R. K.; Byrd, N. R.; Lister, J. L.

    1972-01-01

    Development of polymers with improved heat transfer coefficients for use in encapsulating electronic modules is discussed. Chemical reactions for synthesizing the polymers are described and thermodynamic and physical properties are analyzed.

  14. Ultrafast Electronic Band Gap Control in an Excitonic Insulator

    NASA Astrophysics Data System (ADS)

    Mor, Selene; Herzog, Marc; Golež, Denis; Werner, Philipp; Eckstein, Martin; Katayama, Naoyuki; Nohara, Minoru; Takagi, Hide; Mizokawa, Takashi; Monney, Claude; Stähler, Julia

    2017-08-01

    We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta2NiSe5 investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of FC=0.2 mJ cm-2 , the band gap narrows transiently, while it is enhanced above FC . Hartree-Fock calculations reveal that this effect can be explained by the presence of the low-temperature excitonic insulator phase of Ta2 NiSe5 , whose order parameter is connected to the gap size. This work demonstrates the ability to manipulate the band gap of Ta2 NiSe5 with light on the femtosecond time scale.

  15. Development of an L-Band RF Electron Gun for SASE in the Infrared Region

    NASA Astrophysics Data System (ADS)

    Kashiwagi, Shigeru; Kato, Ryukou; Isoyama, Goro; Hayano, Hitoshi; Urakawa, Junji

    2010-02-01

    We conduct research on Self-Amplified Spontaneous Emission (SASE) in the infrared region using the 40 MeV, 1.3 GHz L-band linac of Osaka University. The linac equipped with a thermionic electron gun can accelerate a high-intensity single-bunch beam though its normalized emittance is high. In order to advance the research on SASE, we have begun development of an RF gun for the L-band linac in collaboration with KEK. We will report conceptual design of the RF gun and present the status of development of another RF gun for STF at KEK.

  16. Beyond the effective mass approximation: A predictive theory of the nonlinear optical response of conduction electrons

    NASA Astrophysics Data System (ADS)

    Yu, Shukai; Heffernan, Kate H.; Talbayev, Diyar

    2017-03-01

    We present an experimental and computational study of the nonlinear optical response of conduction electrons to intense terahertz (THz) electric field. Our observations (saturable absorption and an amplitude-dependent group refractive index) can be understood on the qualitative level as the breakdown of the effective mass approximation. However, a predictive theoretical description of the nonlinear THz propagation has been missing. We propose a model based on the semiclassical electron dynamics, a realistic band structure, and the free electron Drude parameters to accurately calculate the experimental observables in InSb. Our results open a path to modeling of the conduction-electron optical nonlinearity that governs the THz propagation in semiconductors.

  17. Detecting Band Inversions by Measuring the Environment: Fingerprints of Electronic Band Topology in Bulk Phonon Linewidths

    NASA Astrophysics Data System (ADS)

    Saha, Kush; Légaré, Katherine; Garate, Ion

    2015-10-01

    The interplay between topological phases of matter and dissipative baths constitutes an emergent research topic with links to condensed matter, photonic crystals, cold atomic gases, and quantum information. While recent studies suggest that dissipative baths can induce topological phases in intrinsically trivial quantum materials, the backaction of topological invariants on dissipative baths is overlooked. By exploring this backaction for a centrosymmetric Dirac insulator coupled to phonons, we show that the linewidths of bulk optical phonons can reveal electronic band inversions. This result is the first known example where topological phases of an open quantum system may be detected by measuring the bulk properties of the surrounding environment.

  18. Electron-Phonon Renormalization of Electronic Band Structures of C Allotropes and BN Polymorphs

    NASA Astrophysics Data System (ADS)

    Tutchton, Roxanne M.; Marchbanks, Christopher; Wu, Zhigang

    The effect of lattice vibration on electronic band structures has been mostly neglected in first-principles calculations because the electron-phonon (e-ph) renormalization of quasi-particle energies is often small (< 100 meV). However, in certain materials, such as diamond, the electron-phonon coupling reduces the band gap by nearly 0.5 eV, which is comparable to the many-body corrections of the electronic band structures calculated using the density functional theory (DFT). In this work, we compared two implementations of the Allen-Heine-Cardona theory in the EPW code and the ABINIT package respectively. Our computations of Si and diamond demonstrate that the ABINIT implementation converges much faster. Using this method, the e-ph renormalizations of electronic structures of three C allotropes (diamond, graphite, graphene) and four BN polymorphs (zincblend, wurtzite, mono-layer, and layered-hexagonal) were calculated. Our results suggest that (1) all of the zero-point renormalizations of band gaps in these materials, except for graphene, are larger than 100 meV, and (2) there are large variations in e-ph renormalization of band gaps due to differences in crystal structure. This work was supported by a U.S. DOE Early Career Award (Grant No. DE-SC0006433). Computations were carried out at the Golden Energy Computing Organization at CSM and the National Energy Research Scientific Computing Center (NERSC).

  19. Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure

    NASA Astrophysics Data System (ADS)

    Kishi, Ayaka; Oda, Masato; Shinozuka, Yuzo

    2016-05-01

    This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp3 tight-binding models. Solving derived quasi-Hamiltonian 24 × 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III-V and II-VI wurtzite alloys: cation-substituted Al1- x Ga x N and Ga1- x In x N and anion-substituted CdS1- x Se x and ZnO1- x S x . The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character.

  20. Electronic Tongue Containing Redox and Conductivity Sensors

    NASA Technical Reports Server (NTRS)

    Buehler, Martin

    2007-01-01

    The Electronic Tongue (E-tongue 2) is an assembly of sensors for measuring concentrations of metal ions and possibly other contaminants in water. Potential uses for electronic tongues include monitoring the chemical quality of water in a variety of natural, industrial, and laboratory settings, and detecting micro-organisms indirectly by measuring microbially influenced corrosion. The device includes a heater, a temperature sensor, an oxidation/reduction (redox) sensor pair, an electrical sensor, an array of eight galvanic cells, and eight ion-specific electrodes.

  1. Template Synthesis of Electronically Conductive Polymers

    DTIC Science & Technology

    1993-12-01

    polyace.ylene (7), and polyaniline (8). This enhancement in conductivity results from enhancements in molecular and supermolecular order in the template...present conductivity data for polyaniline tubules synthesized within these membranes. The monomer solution was 0.325 M in aniline and 1 M in HCI. The...polymerization, the polyaniline surface layers were removed by polishing the faces of the membrane with alumina powder, and the tubule-impregnated membrane

  2. Polaron formation, native defects, and electronic conduction in metal tungstates

    NASA Astrophysics Data System (ADS)

    Hoang, Khang

    2017-07-01

    Iron tungstate (FeWO4 ) and manganese tungstate (MnWO4 ) belong to a family of wolframite-type materials that has applications in various areas, including supercapacitors, batteries, and multiferroics. A detailed understanding of bulk properties and defect physics in these transition-metal tungstates has been lacking, however, impeding possible improvement of their functional properties. Here, we report a first-principles study of FeWO4 and MnWO4 using screened hybrid density-functional calculations. We find that in both compounds the electronic structures near the band edges are predominantly the highly localized transition-metal d states, which allows for the formation of both hole polarons at the Fe (Mn) sites and electron polarons at the W sites. The dominant native point defects in FeWO4 (MnWO4 ) under realistic synthesis conditions are, however, the hole polarons at the Fe (Mn) sites and negatively charged Fe (Mn) vacancies. The presence of low-energy and highly mobile polarons provides an explanation for the good p -type conductivity observed in experiments and the ability of the materials to store energy via a pseudocapacitive mechanism.

  3. Electronic band structure and optical properties of antimony selenide under pressure

    SciTech Connect

    Abhijit, B.K.; Jayaraman, Aditya; Molli, Muralikrishna

    2016-05-23

    In this work we present the optical properties of Antimony Selenide (Sb{sub 2}Se{sub 3}) under ambient conditions and under pressure of 9.2 GPa obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Optical properties like refractive index, absorption coefficient and optical conductivity are calculated using the WIEN2k code.

  4. Tracking the energies of one-dimensional sub-band edges in quantum point contacts using dc conductance measurements.

    PubMed

    Micolich, A P; Zülicke, U

    2011-09-14

    The semiconductor quantum point contact has long been a focal point for studies of one-dimensional (1D) electron transport. Their electrical properties are typically studied using ac conductance methods, but recent work has shown that the dc conductance can be used to obtain additional information, with a density-dependent Landé effective g-factor recently reported (Chen et al 2009 Phys. Rev. B 79 081301). We discuss previous dc conductance measurements of quantum point contacts, demonstrating how valuable additional information can be extracted from the data. We provide a comprehensive and general framework for dc conductance measurements that provides a path to improving the accuracy of existing data and obtaining useful additional data. A key aspect is that dc conductance measurements can be used to map the energy of the 1D sub-band edges directly, giving new insight into the physics that takes place as the spin-split 1D sub-bands populate. Through a re-analysis of the data obtained by Chen et al, we obtain two findings. The first is that the 2↓ sub-band edge closely tracks the source chemical potential when it first begins populating before dropping more rapidly in energy. The second is that the 2↑ sub-band populates more rapidly as the sub-band edge approaches the drain potential. This second finding suggests that the spin-gap may stop opening, or even begin to close again, as the 2↑ sub-band continues populating, consistent with recent theoretical calculations and experimental studies.

  5. Carbon atomic wires: charge transfer induced electron conduction

    NASA Astrophysics Data System (ADS)

    Larade, Brian; Taylor, Jeremy; Mehrez, Hatem; Guo, Hong

    2001-03-01

    We report a first principles theoretical analysis of quantum transport properties of carbon atomic wires. Our theory is based on density functional theory within the LDA approximation, with standard norm conserving pseudopotentials defining the atomic core, and a localized orbital basis set to model the valence states. The charge density for the open atomic wire system is calculated using the non-equilibrium Green's functions. This theory is implemented in our molecular electronics modeling package McDCAL. For carbon atomic chains with different lengths in contact with metallic electrodes, we calculated linear DC conductance as a function of the chain-electrode distance and the current-voltage characteristics. Our results show that charge transfer from the electrodes to the atomic wire plays a most important role in aligning the Fermi level of the electrodes to the LUMO state of the atomic wire, inducing a substantial conductance variation due to this effect. Our results also show that the eigenstates of the carbon chain and band structure of the electrodes are of particular importance to the transport properties. We will compare our results to those obtained previously.

  6. Charge transport in gapless electron-hole systems with arbitrary band dispersion

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.

    2015-05-01

    Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and nonchiral) systems in the presence of resistive scattering due to static disorder arising from random quenched impurities in the background. We obtain the dependence of the Boltzmann conductivity on carrier density and temperature for arbitrary band dispersion in arbitrary dimensionality assuming long-range (˜1 /r ) Coulomb disorder and zero-range white-noise disorder [˜δ (r ) ]. We establish that the temperature and the density dependence of the Boltzmann conductivity manifests scaling behaviors determining, respectively, the intrinsic semimetallic or the extrinsic metallic property of the gapless system. Our results apply equally well to both chiral and nonchiral gapless systems, and provide a qualitative understanding of the dependence of the Boltzmann conductivity on the band dispersion in arbitrary dimensionality.

  7. Quantum Ising model coupled with conducting electrons

    NASA Astrophysics Data System (ADS)

    Yamashita, Yasufumi; Yonemitsu, Kenji

    2005-01-01

    The effect of photo-doping on the quantum paraelectric SrTiO3 is studied by using the one-dimensional quantum Ising model, where the Ising spin describes the effective lattice polarization of an optical phonon. Two types of electron-phonon couplings are introduced through the modulation of transfer integral via lattice deformations. After the exact diagonalization and the perturbation studies, we find that photo-induced low-density carriers can drastically alter quantum fluctuations when the system locates near the quantum critical point between the quantum para- and ferro-electric phases.

  8. Effect of band filling on anomalous Hall conductivity and magneto-crystalline anisotropy in NiFe epitaxial thin films

    SciTech Connect

    Shi, Zhong; Jiang, Hang-Yu; Zhou, Shi-Ming; Hou, Yan-Liang; Ye, Quan-Lin; Su Si, Ming

    2016-01-15

    The anomalous Hall effect (AHE) and magneto-crystalline anisotropy (MCA) are investigated in epitaxial Ni{sub x}Fe{sub 1−x} thin films grown on MgO (001) substrates. The scattering independent term b of anomalous Hall conductivity shows obvious correlation with cubic magneto-crystalline anisotropy K{sub 1}. When nickel content x decreasing, both b and K{sub 1} vary continuously from negative to positive, changing sign at about x = 0.85. Ab initio calculations indicate Ni{sub x}Fe{sub 1−x} has more abundant band structures than pure Ni due to the tuning of valence electrons (band fillings), resulting in the increased b and K{sub 1}. This remarkable correlation between b and K{sub 1} can be attributed to the effect of band filling near the Fermi surface.

  9. Bacteriorhodopsin as an electronic conduction medium for biomolecular electronics.

    PubMed

    Jin, Yongdong; Honig, Tal; Ron, Izhar; Friedman, Noga; Sheves, Mordechai; Cahen, David

    2008-11-01

    Interfacing functional proteins with solid supports for device applications is a promising route to possible applications in bio-electronics, -sensors, and -optics. Various possible applications of bacteriorhodopsin (bR) have been explored and reviewed since the discovery of bR. This tutorial review discusses bR as a medium for biomolecular optoelectronics, emphasizing ways in which it can be interfaced, especially as a thin film, solid-state current-carrying electronic element.

  10. Origins of electronic band gap reduction in Cr/N codoped TiO2.

    PubMed

    Parks Cheney, C; Vilmercati, P; Martin, E W; Chiodi, M; Gavioli, L; Regmi, M; Eres, G; Callcott, T A; Weitering, H H; Mannella, N

    2014-01-24

    Recent studies indicated that noncompensated cation-anion codoping of wide-band-gap oxide semiconductors such as anatase TiO2 significantly reduces the optical band gap and thus strongly enhances the absorption of visible light [W. Zhu et al., Phys. Rev. Lett. 103, 226401 (2009)]. We used soft x-ray spectroscopy to fully determine the location and nature of the impurity levels responsible for the extraordinarily large (∼1 eV) band gap reduction of noncompensated codoped rutile TiO2. It is shown that Cr/N codoping strongly enhances the substitutional N content, compared to single element doping. The band gap reduction is due to the formation of Cr 3d3 levels in the lower half of the gap while the conduction band minimum is comprised of localized Cr 3d and delocalized N 2p states. Band gap reduction and carrier delocalization are critical elements for efficient light-to-current conversion in oxide semiconductors. These findings thus raise the prospect of using codoped oxide semiconductors with specifically engineered electronic properties in a variety of photovoltaic and photocatalytic applications.

  11. The electronic structures of vanadate salts: Cation substitution as a tool for band gap manipulation

    SciTech Connect

    Dolgos, Michelle R.; Paraskos, Alexandra M.; Stoltzfus, Matthew W.; Yarnell, Samantha C.; Woodward, Patrick M.

    2009-07-15

    The electronic structures of six ternary metal oxides containing isolated vanadate ions, Ba{sub 3}(VO{sub 4}){sub 2}, Pb{sub 3}(VO{sub 4}){sub 2}, YVO{sub 4}, BiVO{sub 4}, CeVO{sub 4} and Ag{sub 3}VO{sub 4} were studied using diffuse reflectance spectroscopy and electronic structure calculations. While the electronic structure near the Fermi level originates largely from the molecular orbitals of the vanadate ion, both experiment and theory show that the cation can strongly influence these electronic states. The observation that Ba{sub 3}(VO{sub 4}){sub 2} and YVO{sub 4} have similar band gaps, both 3.8 eV, shows that cations with a noble gas configuration have little impact on the electronic structure. Band structure calculations support this hypothesis. In Pb{sub 3}(VO{sub 4}){sub 2} and BiVO{sub 4} the band gap is reduced by 0.9-1.0 eV through interactions of (a) the filled cation 6s orbitals with nonbonding O 2p states at the top of the valence band, and (b) overlap of empty 6p orbitals with antibonding V 3d-O 2p states at the bottom of the conduction band. In Ag{sub 3}VO{sub 4} mixing between filled Ag 4d and O 2p states destabilizes states at the top of the valence band leading to a large decrease in the band gap (E{sub g}=2.2 eV). In CeVO{sub 4} excitations from partially filled 4f orbitals into the conduction band lower the effective band gap to 1.8 eV. In the Ce{sub 1-x}Bi{sub x}VO{sub 4} (0<=x<=0.5) and Ce{sub 1-x}Y{sub x}VO{sub 4} (x=0.1, 0.2) solid solutions the band gap narrows slightly when Bi{sup 3+} or Y{sup 3+} are introduced. The nonlinear response of the band gap to changes in composition is a result of the localized nature of the Ce 4f orbitals. - Graphical abstract: The electronic structures of six vanadate salts, Ba{sub 3}(VO{sub 4}){sub 2}, Pb{sub 3}(VO{sub 4}){sub 2}, YVO{sub 4}, BiVO{sub 4}, Ag{sub 3}VO{sub 4} and CeVO{sub 4}, are studied. The results show that the oxygen to vanadium charge transfer, which is largely responsible for the

  12. Global Kinetic Modeling of Banded Electron Structures in the Plasmasphere

    NASA Technical Reports Server (NTRS)

    Liemohn, M. W.; Khazanov, G. V.

    1997-01-01

    Significant fluxes of 10 eV to 30 keV electrons have been detected in the plasmasphere, appearing as banded structures in energy with broad spatial extents and slowly evolving over several days. It is thought that these populations are decaying plasma sheet electrons injected into the corotating region of near-Earth space. This capture can occur when the convective electric field drops rapidly and the Alfven boundary suddenly outward, trapping the inner edge of the plasma sheet along closed drift paths. Our bounce-averaged kinetic model of superthermal electron transport is able to simulate this capture and the subsequent drift, diffusion, and decay of the plasma cloud. Results of this simulation will be shown and discussed, from the initial injection during the elevated convection to the final loss of the particles. It is thought that not only Coulomb collisions but also wave-particle interactions play a significant role in altering the plasma cloud. Quasilinear diffusion is currently being incorporated into the model and the importance of this mechanism will be examined. Also, the high anisotropy of the trapped population could be unstable and generate plasma waves. These and other processes will be investigated to determine the final fate of the cloud and to quantify where, how, and when the energy of the plasma cloud is deposited. Comparisons with CRRES observations of these events are shown to verify the model and explain the data.

  13. Theory of Auger-electron and appearance-potential spectroscopy for interacting valence-band electrons

    NASA Astrophysics Data System (ADS)

    Nolting, W.; Geipel, G.; Ertl, K.

    1991-12-01

    A theory of Auger-electron spectroscopy (AES) and appearance-potential spectroscopy (APS) is presented for interacting electrons in a nondegenerate energy band, described within the framework of the Hubbard model. Both types of spectroscopy are based on the same two-particle spectral density. A diagrammatic vertex-correction method (Matsubara formalism) is used to express this function in terms of the one-particle spectral density. The latter is approximately determined for arbitrary temperature T, arbitrary coupling strength U/W (U, the intra-atomic Coulomb matrix element; W, the width of the ``free'' Bloch band), and arbitrary band occupations n (0<=n<=2 average number of band electrons per site) by a self-consistent moment method. In weakly coupled systems the electron correlations give rise to certain deformations of the quasiparticle density of states (QDOS) in relation to the Bloch density of states (BDOS), where, however, spontaneous magnetic order is excluded, irrespective of the band filling n. The AE (AP) spectra consist of only one structure a few eV wide (``bandlike'') which is strongly n dependent, but only slightly T dependent, being rather well approximated by a simple self-convolution of the occupied (unoccupied) QDOS. For strongly correlated electrons the Bloch band splits into two quasiparticle subbands. This leads for n<1 to one line in the AE spectrum and three lines in the AP spectrum, and vice versa for n>1. For sufficiently strong correlations U/W additional satellites appear that refer to situations where the two excited quasiparticles (quasiholes) propagate as tightly bound pairs through the lattice without being scattered by other charge carriers. As soon as the satellite splits off from the bandlike part of the spectrum, it takes almost the full spectral weight, conveying the impression of an ``atomiclike'' AE (AP) line shape. The satellite has almost exactly the structure of the free BDOS. If the particle density n as well as the hole

  14. Affordable, Lightweight, Highly Conductive Polymer Composite Electronic Packaging Structures

    DTIC Science & Technology

    1996-06-01

    matrix composite materials and how various material designs can be utilized in various structural/thermal configurations to produce electronic housings and...conductive polymer composite electronic packaging (i.e., electronic housings and heat sinks). The research will center on predominately polymer

  15. Geobacter sulfurreducens pili support ohmic electronic conduction in aqueous solution.

    PubMed

    Ing, Nicole L; Nusca, Tyler D; Hochbaum, Allon I

    2017-08-16

    The bacterium Geobacter sulfurreducens is a model biological catalyst in microbial electrochemical devices. G. sulfurreducens forms electrically conductive, electrode-associated biofilms, but the biological structures mediating electrical conduction from cells to the electrodes are a matter of debate. Bacteria in these communities produce a network of fiber-like Type IV pili, which have been proposed to act either as inherent, protein-based electronic conductors, or as electronically inert scaffolds for cytochromes mediating long-range charge transport. Previous studies have examined pilus conduction mechanisms under vacuum and in dry conditions, but their conduction mechanism under physiologically relevant conditions has yet to be characterized. In this work, we isolate G. sulfurreducens pili, and compare the electronic conduction mechanism of both live biofilms and purified pili networks under dry and aqueous conditions. Solid-state I-V characteristics indicate that electronic transport in films of purified pili is representative of conduction in a fiber percolation network. Electrochemical gating measurements in a bipotentiostat device configuration confirm previous results suggesting redox currents dominate live biofilm conduction. Purified pili films, however, exhibit non-redox electronic conduction under aqueous, buffered conditions, and their conductivity increases with decreasing temperature. These findings show that isolated pili possess inherent, non-redox-mediated conductivity consistent with a metallic-like model of charge carrier transport. The results demonstrate an experimental platform for studying electronic transport in biomaterials and suggest that pili serve as an exemplary model for designing bioelectronic interfaces.

  16. Comprehensive Study on Band-Gap Variations in sp3-Bonded Semiconductors: Roles of Electronic States Floating in Internal Space

    NASA Astrophysics Data System (ADS)

    Matsushita, Yu-ichiro; Oshiyama, Atsushi

    2017-05-01

    We have performed electronic structure calculations to explore the band-gap dependence on the polytype for sp3-bonded semiconducting materials, i.e., SiC, AlN, BN, GaN, Si, and diamond. In this comprehensive study, we have found that the dependence of the band gap on the polytype is common in sp3-bonded semiconductors; SiC, AlN, and BN exhibit the smallest band gaps in the 3C structure, whereas diamond does in the 2H structure. We have also clarified that the microscopic mechanism of the band-gap variations is due to peculiar electron states floating in the internal channel space at the conduction band minimum (CBM), and that the internal channel length and the electrostatic potential in the channel affect the energy level of the CBM.

  17. Band gap and conductivity evaluation of carbon nanotube with hematite for green ammonia synthesis

    NASA Astrophysics Data System (ADS)

    Rehman, Zia Ur; Yahya, Noorhana; Shafie, A'fza; Soleimani, Hassan; Alqasim, Bilal Hassan; Irfan, Muhammad; Qureshi, Saima

    2016-11-01

    To understand the change in number of electrons, band gap and total energy in the catalyst simulation was performed using Cambridge Serial Total Energy Package (CASTEP). Two catalyst were taken into consideration namely carbon nanotubes (CNTs) and hematite adjacent with CNTs. The simulation based study of the adsorption of hydrogen and nitrogen with reference to change in number of electron and band-gap of carbon nano tubes and hematite mixed with carbon nanotubes was not reported in literature. For this reason carbon nanotubes band gap for different chirality and number of walls was calculated through simulation. After that simulation for number of electrons, band gap and average total energy of CNTs alone and a mixture hematite with CNTs was performed before and after adsorption of hydrogen and nitrogen. From simulation the number of electrons were found to be doubled for hematite mixed with CNTs and average total energy was also increased as compared to similar parameter for CNTs without hematite. In conclusion the hematite with carbon nanotubes is preferred candidate for ammonia synthesis using magnetic induction method. Ammonia synthesis was done using MIM. Ammonia yield was quantified by Kjaldal method.

  18. Quantal Heating of Conducting Electrons with Discrete Spectrum

    SciTech Connect

    Vitkalov, S. A.; Bykov, A. A.

    2011-12-23

    Usually heating of conducting electrons by dc electric field results in an increase of electron temperature. In this paper we show that the dc heating of 2D electrons, placed in quantized magnetic fields, results in a peculiar electron distribution, which has the same broadening or an effective 'temperature' as the unbiased electron system. The quantal heating, however, violates strongly the Ohm's Law. In the conducting system with discrete electron spectrum the quantal heating results in spectacular decrease of electron resistance and transition of the electrons into a state with zero differential resistance (ZDR). Finally the heating leads to apparent dc driven metal-insulator transition, which correlates with the transition into the ZDR state. The correlation is very unexpected and is not understood.

  19. Theory of thermal conductivity in a multi-band superconductor : Application to pnictides

    NASA Astrophysics Data System (ADS)

    Mishra, Vivek; Vorontsov, A. B.; Hirschfeld, P. J.; Vekhter, I.

    2010-03-01

    We calculate low temperature thermal conductivity within a two band model for newly discovered ferro-pnictide superconductors. We consider three different cases, sign changing s-wave state, highly anisotropic s-wave state and a state with order parameter nodes on one band. To include the effect of disorder, we have performed fully self-consistent T-matrix approximation including both intraband and interband impurity scatterings. We also study the behavior of the low temperature thermal conductivity under applied magnetic field using a recently developed variant of the Brandt-Pesch-Tewordt approximation, and compare our results with latest experimental data.

  20. Band gap and conductivity variations of ZnO thin films by doping with Aluminium

    NASA Astrophysics Data System (ADS)

    Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny

    2015-02-01

    Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). Aluminium was doped for different doping concentrations from 3 at.% to 12 at.% in steps of 3 at.%. Conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. It was observed that as the doping concentration of Aluminium increases, the band gap of the samples decreases and concequently conductivity of the samples increases.

  1. Toxicity of metal oxide nanoparticles in Escherichia coli correlates with conduction band and hydration energies.

    PubMed

    Kaweeteerawat, Chitrada; Ivask, Angela; Liu, Rong; Zhang, Haiyuan; Chang, Chong Hyun; Low-Kam, Cecile; Fischer, Heidi; Ji, Zhaoxia; Pokhrel, Suman; Cohen, Yoram; Telesca, Donatello; Zink, Jeffrey; Mädler, Lutz; Holden, Patricia A; Nel, Andre; Godwin, Hilary

    2015-01-20

    Metal oxide nanoparticles (MOx NPs) are used for a host of applications, such as electronics, cosmetics, construction, and medicine, and as a result, the safety of these materials to humans and the environment is of considerable interest. A prior study of 24 MOx NPs in mammalian cells revealed that some of these materials show hazard potential. Here, we report the growth inhibitory effects of the same series of MOx NPs in the bacterium Escherichia coli and show that toxicity trends observed in E. coli parallel those seen previously in mammalian cells. Of the 24 materials studied, only ZnO, CuO, CoO, Mn2O3, Co3O4, Ni2O3, and Cr2O3 were found to exert significant growth inhibitory effects; these effects were found to relate to membrane damage and oxidative stress responses in minimal trophic media. A correlation of the toxicological data with physicochemical parameters of MOx NPs revealed that the probability of a MOx NP being toxic increases as the hydration enthalpy becomes less negative and as the conduction band energy approaches those of biological molecules. These observations are consistent with prior results observed in mammalian cells, revealing that mechanisms of toxicity of MOx NPs are consistent across two very different taxa. These results suggest that studying nanotoxicity in E. coli may help to predict toxicity patterns in higher organisms.

  2. Electronic states and electrical conductivity of the Si(111) native oxide surface adsorbed with electron donor tetrakis(dimethylamino)ethylene

    SciTech Connect

    Yoshimoto, Shinya Shiozawa, Yuichiro; Koitaya, Takanori; Noritake, Hiroyuki; Mukai, Kozo; Yoshinobu, Jun

    2016-08-28

    Electronic states and electrical conductivity of the native oxide Si(111) surface adsorbed with an electron donor tetrakis(dimethylamino)ethylene (TDAE) were investigated using ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy (XPS), and independently driven four-probe conductivity measurements. The formation of positively charged TDAE species is confirmed by the downward shift of the vacuum level by 1.45 eV, the absence of HOMO level in the valence band, and observation of the positively charged state in the N 1s XPS spectra. Si 2p XPS spectra and four-probe conductivity measurements revealed that TDAE adsorption induces an increase in downward band bending and a reduction in electrical resistance of the surface, respectively. The sheet conductivity and the electron density of the surface are 1.1 μS/◻ and 4.6 × 10{sup 9} cm{sup −2}, respectively, after TDAE adsorption, and they are as high as 350% of the original surface. These results demonstrate that the electron density of the semiconductor surface is successfully controlled by the electron donor molecule TDAE.

  3. Low Starting Electron Beam Current in Degenerate Band Edge Oscillators

    NASA Astrophysics Data System (ADS)

    Othman, Mohamed A. K.; Veysi, Mehdi; Figotin, Alexander; Capolino, Filippo

    2016-06-01

    We propose a new principle of operation in vacuum electron-beam-based oscillators that leads to a low beam current for starting oscillations. The principle is based on super synchronous operation of an electron beam interacting with four degenerate electromagnetic modes in a slow-wave structure (SWS). The four mode super synchronous regime is associated with a very special degeneracy condition in the dispersion diagram of a cold periodic SWS called degenerate band edge (DBE). This regime features a giant group delay in the finitelength SWS and low starting-oscillation beam current. The starting beam current is at least an order of magnitude smaller compared to a conventional backward wave oscillator (BWO) of the same length. As a representative example we consider a SWS conceived by a periodically-loaded metallic waveguide supporting a DBE, and investigate starting-oscillation conditions using Pierce theory generalized to coupled transmission lines (CTL). The proposed super synchronism regime can be straightforwardly adapted to waveguide geometries others than the periodically-loaded waveguide considered here since DBE is a general property that can be realized in a variety of structures.

  4. Sensory properties of oxide films with high concentrations of conduction electrons

    NASA Astrophysics Data System (ADS)

    Kozhushner, M. A.; Bodneva, V. L.; Belysheva, T. V.; Gerasimov, G. N.; Gromov, V. F.; Ikim, M. I.; Paltiel, Y.; Spiridonova, E. Yu.; Trakhtenberg, L. I.

    2017-03-01

    The dependence of a sensor's response to hydrogen on the temperature and hydrogen pressure in an indium oxide nanostructured film is measured. A theory of sensor's response to reducing gases in nanostructured semiconducting oxides with high concentrations of electrons in the conduction band is developed (using the example of In2O3). It is shown that the capture of conduction electrons by adsorbed oxygen redistributes the electrons in nanoparticles and reduces the surface electron density and the conductivity of a system; the conductivity is proportional to the electron density in nanoparticle contacts, i.e., to the surface electron density. It is found that atomic oxygen ions react with reducing gases (H2, CO) during adsorption of the latter: electrons are released and enter the volumes of nanoparticles; the conductivity of the system grows, creating the sensory effect. Using a model developed earlier to describe the distribution of conduction electrons in a semiconductor nanoparticle, a kinetic scheme corresponding to the above scenario is built and corresponding equations are solved. As a result, a theoretical dependence of a sensor's sensitivity to temperature is found that describes the experimental data well.

  5. Conduction mechanism in Polyaniline-flyash composite material for shielding against electromagnetic radiation in X-band & Ku band

    NASA Astrophysics Data System (ADS)

    Singh, Avanish Pratap; Anoop Kumar, S.; Chandra, Amita; Dhawan, S. K.

    2011-06-01

    β-Naphthalene sulphonic acid (β-NSA) doped polyaniline (PANI)-flyash (FA) composites have been prepared by chemical oxidative polymerization route whose conductivity lies in the range 2.37-21.49 S/cm. The temperature dependence of electrical conductivity has also been recorded which shows that composites follow Mott's 3D-VRH model. SEM images demonstrate that β-NSA leads to the formation of the tubular structure with incorporated flyash phase. TGA studies show the improvement in thermal stability of composites with increase in loading level of flyash. Complex parameters i.e. permittivity (ɛ* = ɛ'- iɛ″) and permeability (μ*=μ'- iμ″) of PANI-FA composites have been calculated from experimental scattering parameters (S11 & S21) using theoretical calculations given in Nicholson-Ross and Weir algorithms. The microwave absorption properties of the composites have been studied in X-band (8.2 - 12.4 GHz) & Ku-Band (12.4 - 18 GHz) frequency range. The maximum shielding effectiveness observed was 32dB, which strongly depends on dielectric loss and volume fraction of flyash in PANI matrix.

  6. Organic photovoltaic cell incorporating electron conducting exciton blocking layers

    SciTech Connect

    Forrest, Stephen R.; Lassiter, Brian E.

    2014-08-26

    The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

  7. Electron band structure of the high pressure cubic phase of AlH3

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Zarifi, Niliffar; Yim, Wai-Leung; Tse, J. S.

    2012-07-01

    The electronic band structure of the cubic Pm3n phase of AlH3 stable above 100 GPa is examined with semi-local, Tran-Blaha modified Becke-Johnson local density approximation (TB-mBJLDA), screened hybrid density functionals and GW methods. The shift of the conduction band to higher energy with increasing pressure is predicted by all methods. However, there are significant differences in detail band structure. In the pressure range from 90 to160 GPa, semi-local, hybrid functional and TB-mBJLDA calculations predicted that AlH3 is a poor metal. In comparison, GW calculations show a gap opening at 160 GPa and AlH3 becomes a small gap semi-conductor. From the trends of the calculated band shifts, it can be concluded that the favourable conditions leading to the nesting of Fermi surfaces predicted by semi-local calculation have disappeared if the exchange term is included. The results highlight the importance of the correction to the exchange energy on the band structure of hydrogen dominant dense metal hydrides at high pressure hydrides and may help to rationalize the absence of superconductivity in AlH3 from experimental measurements.

  8. Post-precipitation bias in band-tailed pigeon surveys conducted at mineral sites

    USGS Publications Warehouse

    Overton, C.T.; Schmitz, R.A.; Casazza, M.L.

    2005-01-01

    Many animal surveys to estimate populations or index trends include protocol prohibiting counts during rain but fail to address effects of rainfall preceding the count. Prior research on Pacific Coast band-tailed pigeons (Patagioenas fasciata monilis) documented declines in use of mineral sites during rainfall. We hypothesized that prior precipitation was associated with a short-term increase in use of mineral sites following rain. We conducted weekly counts of band-tailed pigeons at 19 Pacific Northwest mineral sites in 2001 and 20 sites in 2002. Results from regression analysis indicated higher counts ???2 days after rain (11.31??5.00% [x????SE]) compared to ???3 days. Individual index counts conducted ???2 days after rain were biased high, resulting in reduced ability to accurately estimate population trends. Models of band-tailed pigeon visitation rates throughout the summer showed increased mineral-site counts during both June and August migration periods, relative to the July breeding period. Our research supported previous studies recommending that mineral-site counts used to index the band-tailed pigeon population be conducted during July. We further recommend conducting counts >3 days after rain to avoid weather-related bias in index estimation. The design of other population sampling strategies that rely on annual counts should consider the influence of aberrant weather not only coincident with but also preceding surveys if weather patterns are thought to influence behavior or detection probability of target species.

  9. Conduction band mass determinations for n-type InGaAs/InAlAs single quantum wells

    SciTech Connect

    Jones, E.D.; Reno, J.L.; Kotera, Nobuo; Wang, Y.

    1998-05-01

    The authors report the measurement of the conduction band mass in n-type single 27-ML-wide InGaAs/InAlAs quantum well lattice matched to InP using two methods: (1) Magnetoluminescence spectroscopy and (2) far-infrared cyclotron resonance. The magnetoluminescence method utilizes Landau level transitions between 0 and 14 T at 1.4 K. The far infrared cyclotron resonance measurements were made at 4.2 K and to fields as large up to 18 T. The 2D-carrier density N{sub 2D} = 3 {times} 10{sup 11} cm{sup {minus}2} at low temperatures. The magnetoluminescence technique yielded an effective conduction-band mass of m{sub c} = 0.062m{sub 0} while the far infrared cyclotron resonance measurements gave m{sub c} = 0.056m{sub 0}, where m{sub 0} is the free electron mass. Both measurements show no evidence for any significant conduction-band nonparabolicity.

  10. Method of forming electronically conducting polymers on conducting and nonconducting substrates

    NASA Technical Reports Server (NTRS)

    Murphy, Oliver J. (Inventor); Hitchens, G. Duncan (Inventor); Hodko, Dalibor (Inventor); Clarke, Eric T. (Inventor); Miller, David L. (Inventor); Parker, Donald L. (Inventor)

    2001-01-01

    The present invention provides electronically conducting polymer films formed from photosensitive formulations of pyrrole and an electron acceptor that have been selectively exposed to UV light, laser light, or electron beams. The formulations may include photoinitiators, flexibilizers, solvents and the like. These solutions can be used in applications including printed circuit boards and through-hole plating and enable direct metallization processes on non-conducting substrates. After forming the conductive polymer patterns, a printed wiring board can be formed by sensitizing the polymer with palladium and electrolytically depositing copper.

  11. New four-band electrode fabrication to measure in situ electrical property of conducting polymers.

    PubMed

    Xue, Wenbin; Jiang, Xiaoqing; Harima, Yutaka

    2009-03-15

    A simple and renewable four-band platinum electrode for in situ conductivity measurement of polymers is described. A model is developed to evaluate contact resistance between the electrode and polyaniline film and calibrate the film resistances obtained by two-probe and four-probe methods. The conductivity of the film is calculated from the calibrated resistance. By comparing the effects of band thickness, gap width, and film thickness, it is found that the ratio K of the middle gap width to the thickness of the internal two platinum bands is the most important parameter to characterize one four-band electrode. An ideal four-band electrode should have large K and wide middle gap as possible so long as the film can uniformly cover the electrode. Under this case, the influence of contact resistance on the four-probe measurement of film resistance is negligible. It is shown that contact resistance depends on the oxidation state of the film. It rises nonlinearly with increasing film resistance.

  12. Conduction electron spin resonance in Mg 1 - x Al x B2

    NASA Astrophysics Data System (ADS)

    Likodimos, V.; Koutandos, S.; Pissas, M.; Papavassiliou, G.; Prassides, K.

    2003-01-01

    Conduction electron spin resonance is employed to study the interplay of the electronic and structural properties in the normal state of Mg 1 - x Al x B2 alloys as a function of Al-doping for 0 <= x <= 1. The x-dependence of the spin susceptibility reveals considerable reduction of the total density of states N(EF) with increasing Al concentration, complying with theoretical predictions for a predominant filling effect of the hole σ bands by electron doping. The CESR linewidth exhibits significant broadening, especially prominent in the high-Al-content region, indicative of the presence of enhanced structural disorder, consistent with the presence of compositional fluctuations.

  13. Conduction and Charge Storage in Electron Irradiated Spacecraft Insulators

    DTIC Science & Technology

    1981-07-01

    RADC-TR-8 I1- 98 Final Technical Report July 1981 ’ CONDUCTION AND CHARGE STORAGE SIN ELECTRON IRRADIATED SPACECRAFT INSULATORS IRT Corporation J...some of the parameters which control th’- deposition and transport of keV electrons in representative spacecraft insulators found on the surface of...of the charge deposition centroid, dark, radiation, delayed and surface conductivities. These parameters were then used in a phenomenological

  14. Electronic crosstalk in Terra MODIS thermal emissive bands

    NASA Astrophysics Data System (ADS)

    Sun, Junqiang; Madhavan, Sriharsha; Xiong, Xiaoxiong; Wang, Menghua

    2015-09-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is a legacy Earth remote sensing instrument in the National Aeronautics and Space Administration (NASA) Earth Observing System (EOS). The first MODIS instrument was launched in December 1999 on board the Terra spacecraft. MODIS has 36 bands, among which bands 20-25 and bands 27-36 are thermal emissive bands covering a wavelength range from 3.7μm to 14.2μm. It has been found that there are severe contaminations in Terra bands 27-30 (6.7 μm - 9.73 μm) due to crosstalk of signals among themselves. The crosstalk effect induces strong striping artifacts in the Earth View (EV) images and causes large long-term drifts in the EV brightness temperature (BT) in these bands. An algorithm using a linear approximation derived from on-orbit lunar observations has been developed to correct the crosstalk effect for them. It was demonstrated that the crosstalk correction can substantially reduce the striping noise in the EV images and significantly remove the long-term drifts in the EV BT in the Long Wave InfraRed (LWIR) water vapor channels (bands 27-28). In this paper, the crosstalk correction algorithm previously developed is applied to correct the crosstalk effect in the remaining LWIR bands 29 and 30. The crosstalk correction successfully reduces the striping artifact in the EV images and removes long-term drifts in the EV BT in bands 29-30 as was done similarly for bands 27-28. The crosstalk correction algorithm can thus substantially improve both the image quality and the radiometric accuracy of the Level 1B (L1B) products of the LWIR PV bands, bands 27-30. From this study it is also understood that other Terra MODIS thermal emissive bands are contaminated by the crosstalk effect and that the algorithm can be applied to these bands for crosstalk correction.

  15. Electronic Power Conditioner for Ku-band Travelling Wave Tube

    NASA Astrophysics Data System (ADS)

    Kowstubha, Palle; Krishnaveni, K.; Ramesh Reddy, K.

    2016-07-01

    A highly sophisticated regulated power supply is known as electronic power conditioner (EPC) is required to energise travelling wave tubes (TWTs), which are used as RF signal amplifiers in satellite payloads. The assembly consisting of TWT and EPC together is known as travelling wave tube amplifier (TWTA). EPC is used to provide isolated and conditioned voltage rails with tight regulation to various electrodes of TWT and makes its RF performance independent of solar bus variations which are caused due to varying conditions of eclipse and sunlit. The payload mass and their power consumption is mainly due to the existence of TWTAs that represent about 35 % of total mass and about 70-90 % (based on the type of satellite application) of overall dc power consumption. This situation ensures a continuous improvement in the design of TWTAs and their associated EPCs to realize more efficient and light products. Critical technologies involved in EPCs are design and configuration, closed loop regulation, component and material selection, energy limiting of high voltage (HV) outputs and potting of HV card etc. This work addresses some of these critical technologies evolved in realizing and testing the state of art of EPC and it focuses on the design of HV supply with a HV and high power capability, up to 6 kV and 170 WRF, respectively required for a space TWTA. Finally, an experimental prototype of EPC with a dc power of 320 W provides different voltages required by Ku-band TWT in open loop configuration.

  16. Electronic Power Conditioner for Ku-band Travelling Wave Tube

    NASA Astrophysics Data System (ADS)

    Kowstubha, Palle; Krishnaveni, K.; Ramesh Reddy, K.

    2017-04-01

    A highly sophisticated regulated power supply is known as electronic power conditioner (EPC) is required to energise travelling wave tubes (TWTs), which are used as RF signal amplifiers in satellite payloads. The assembly consisting of TWT and EPC together is known as travelling wave tube amplifier (TWTA). EPC is used to provide isolated and conditioned voltage rails with tight regulation to various electrodes of TWT and makes its RF performance independent of solar bus variations which are caused due to varying conditions of eclipse and sunlit. The payload mass and their power consumption is mainly due to the existence of TWTAs that represent about 35 % of total mass and about 70-90 % (based on the type of satellite application) of overall dc power consumption. This situation ensures a continuous improvement in the design of TWTAs and their associated EPCs to realize more efficient and light products. Critical technologies involved in EPCs are design and configuration, closed loop regulation, component and material selection, energy limiting of high voltage (HV) outputs and potting of HV card etc. This work addresses some of these critical technologies evolved in realizing and testing the state of art of EPC and it focuses on the design of HV supply with a HV and high power capability, up to 6 kV and 170 WRF, respectively required for a space TWTA. Finally, an experimental prototype of EPC with a dc power of 320 W provides different voltages required by Ku-band TWT in open loop configuration.

  17. Layer dependence of the electronic band alignment of few-layer Mo S2 on Si O2 measured using photoemission electron microscopy

    NASA Astrophysics Data System (ADS)

    Berg, Morgann; Keyshar, Kunttal; Bilgin, Ismail; Liu, Fangze; Yamaguchi, Hisato; Vajtai, Robert; Chan, Calvin; Gupta, Gautam; Kar, Swastik; Ajayan, Pulickel; Ohta, Taisuke; Mohite, Aditya D.

    2017-06-01

    Tailoring band alignment layer-by-layer using heterojunctions of two-dimensional (2D) semiconductors is an attractive prospect for producing next-generation electronic and optoelectronic devices that are ultrathin, flexible, and efficient. The 2D layers of transition metal dichalcogenides (TMDs) in laboratory devices have already shown favorable characteristics for electronic and optoelectronic applications. Despite these strides, a systematic understanding of how band alignment evolves from monolayer to multilayer structures is still lacking in experimental studies, which hinders development of novel devices based on TMDs. Here, we report on the local band alignment of monolayer, bilayer, and trilayer Mo S2 on a 285-nm-thick Si O2 substrate using an approach to probe the occupied electronic states based on photoemission electron microscopy and deep-ultraviolet light. Local measurements of the vacuum level and the valence band edge at the Brillouin zone center show that the addition of layers to monolayer Mo S2 increases the relative work function and pushes the valence band edge toward the vacuum level. We also deduced n -type doping of few-layer Mo S2 and type-I band alignment across monolayer-to-bilayer and bilayer-to-trilayer lateral junctions. Conducted in isolation from environmental effects owing to the vacuum condition of the measurement and an insulating Si O2 substrate, this study shows a metrology to uncover electronic properties intrinsic to Mo S2 semiconducting layers and emerging 2D crystals alike.

  18. Conduction band offset determination between strained CdSe and ZnSe layers using DLTS

    SciTech Connect

    Rangel-Kuoppa, Victor-Tapio

    2013-12-04

    The conduction band offset between strained CdSe layers embedded in unintentionally n-type doped ZnSe is measured and reported. Two samples, consisting of thirty Ultra Thin Quantum Wells (UTQWs) of CdSe embedded in ZnSe, grown by Atomic Layer Epitaxy, are used for this study. The thicknesses of the UTQWs are one and three monolayers (MLs) in each sample, respectively. As expected, the sample with one ML UTQWs does not show any energy level in the UTQWs due to the small thickness of the UTQWs, while the thickness of the sample with 3 ML UTQWs is large enough to form an energy level inside the UTQWs. This energy level appears as a majority trap with an activation energy of 223.58 ± 9.54 meV. This corresponds to UTQWs with barrier heights (the conduction band offset) between 742 meV and 784 meV. These values suggest that the band gap misfit between strained CdSe and ZnSe is around 70.5 to 74 % in the conduction band.

  19. Conduction band offset determination between strained CdSe and ZnSe layers using DLTS

    NASA Astrophysics Data System (ADS)

    Rangel-Kuoppa, Victor-Tapio

    2013-12-01

    The conduction band offset between strained CdSe layers embedded in unintentionally n-type doped ZnSe is measured and reported. Two samples, consisting of thirty Ultra Thin Quantum Wells (UTQWs) of CdSe embedded in ZnSe, grown by Atomic Layer Epitaxy, are used for this study. The thicknesses of the UTQWs are one and three monolayers (MLs) in each sample, respectively. As expected, the sample with one ML UTQWs does not show any energy level in the UTQWs due to the small thickness of the UTQWs, while the thickness of the sample with 3 ML UTQWs is large enough to form an energy level inside the UTQWs. This energy level appears as a majority trap with an activation energy of 223.58 ± 9.54 meV. This corresponds to UTQWs with barrier heights (the conduction band offset) between 742 meV and 784 meV. These values suggest that the band gap misfit between strained CdSe and ZnSe is around 70.5 to 74 % in the conduction band.

  20. Adsorbate-induced modification of electronic band structure of epitaxial Bi(111) films

    NASA Astrophysics Data System (ADS)

    Matetskiy, A. V.; Bondarenko, L. V.; Tupchaya, A. Y.; Gruznev, D. V.; Eremeev, S. V.; Zotov, A. V.; Saranin, A. A.

    2017-06-01

    Changes of the electronic band structure of Bi(111) films on Si(111) induced by Cs and Sn adsorption have been studied using angle-resolved photoemission spectroscopy and density functional theory calculations. It has been found that small amounts of Cs when it presents at the surface in a form of the adatom gas leads to shifting of the surface and quantum well states to the higher binding energies due to the electron donation from adsorbate to the Bi film. In contrast, adsorbed Sn dissolves into the Bi film bulk upon heating and acts as an acceptor dopant, that results in shifting of the surface and quantum well states upward to the lower binding energies. These results pave the way to manipulate with the Bi thin film electron band structure allowing to achieve a certain type of conductivity (electron or hole) with a single spin channel at the Fermi level making the adsorbate-modified Bi a reliable base for prospective spintronics applications.

  1. Indirect Band Gap Emission by Hot Electron Injection in Metal/MoS2 and Metal/WSe2 Heterojunctions

    NASA Astrophysics Data System (ADS)

    Li, Zhen; Ezhilarasu, Goutham; Chatzakis, Ioannis; Dhall, Rohan; Chen, Chun-Chung; Cronin, Stephen

    Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds, therefore make more `ideal' Schottky junctions than bulk semiconductors, which produce recombination centers at the interface with metals, inhibiting charge transfer. Here, we observe a more than 10X enhancement in the indirect band gap PL of TMDCs deposited on various metals, while the direct band gap emission remains unchanged. We believe the main mechanism of light emission arises from photoexcited hot electrons in the metal that are injected into the conduction band of MoS2 and WSe2, and subsequently recombine radiatively with minority holes. Since the conduction band at the K-point is 0.5eV higher than at the Σ-point, a lower Schottky barrier of the Σ-point band makes electron injection more favorable. Also, the Σ band consists of the sulfur pz orbital, which overlaps more significantly with the electron wavefunctions in the metal. This enhancement only occurs for thick flakes, and is absent in monolayer and few-layer flakes. Here, the flake thickness must exceed the depletion width of the Schottky junction, in order for efficient radiative recombination to occur in the TMDC. The intensity of this indirect peak decreases at low temperatures. Reference: DOI: 10.1021/acs.nanolett.5b00885

  2. Probing the band structure and local electronic properties of low-dimensional semiconductor structures

    NASA Astrophysics Data System (ADS)

    Walrath, Jenna Cherie

    Low-dimensional semiconductor structures are important for a wide variety of applications, and recent advances in nanoscale fabrication are paving the way for increasingly precise nano-engineering of a wide range of materials. It is therefore essential that the physics of materials at the nanoscale are thoroughly understood to unleash the full potential of nanotechnology, requiring the development of increasingly sophisticated instrumentation and modeling. Of particular interest is the relationship between the local density of states (LDOS) of low-dimensional structures and the band structure and local electronic properties. This dissertation presents the investigation of the band structure, LDOS, and local electronic properties of nanostructures ranging from zero-dimensional (0D) quantum dots (QDs) to two-dimensional (2D) thin films, synthesizing computational and experimental approaches including Poisson-Schrodinger band structure calculations, scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and scanning thermoelectric microscopy (SThEM). A method is presented for quantifying the local Seebeck coefficient (S) with SThEM, using a quasi-3D conversion matrix approach to directly convert temperature gradient-induced voltages S. For a GaAs p-n junction, the resulting S-profile is consistent with that computed using the free carrier concentration profile. This combined computational-experimental approach is expected to enable nanoscale measurements of S across a wide variety of heterostructure interfaces. The local carrier concentration, n, is profiled across epitaxial InAs/GaAs QDs, where SThEM is used to profile the temperature gradient-induced voltage, which is converted to a profile of the local S and finally to an n profile. The S profile is converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. The combined computational-experimental approach suggests a reduced n in the QD center in

  3. Damping Effect Studies for X-band Normal Conducting High Gradient Standing Wave Structures

    SciTech Connect

    Pei, S.; Li, Z.; Tantawi, S.G.; Dolgashev, V.A.; Wang, J.; /SLAC

    2009-08-03

    The Multi-TeV colliders should have the capability to accelerate low emittance beam with high rf efficiency, X-band normal conducting high gradient accelerating structure is one of the promising candidate. However, the long range transverse wake field which can cause beam emittance dilution is one of the critical issues. We examined effectiveness of dipole mode damping in three kinds of X-band, {pi}-mode standing wave structures at 11.424GHz with no detuning considered. They represent three damping schemes: damping with cylindrical iris slot, damping with choke cavity and damping with waveguide coupler. We try to reduce external Q factor below 20 in the first two dipole bands, which usually have very high (R{sub T}/Q){sub T}. The effect of damping on the acceleration mode is also discussed.

  4. Pure-oxygen radiative shocks with electron thermal conduction

    NASA Technical Reports Server (NTRS)

    Borkowski, Kazimierz J.; Shull, J. Michael

    1990-01-01

    Steady state radiative shock models in gas composed entirely of oxygen are calculated with the purpose of explaining observations of fast-moving knots in Cas A and other oxygen-rich SNRs. Models with electron thermal conduction differ significantly from models in which conduction is neglected. Conduction reduces postshock electron temperatures by a factor of 7-10 and flattens temperature gradients. The O III ion, whose forbidden emission usually dominates the observed spectra, is present over a wide range of shock velocities, from 100 to 170 km/s. The electron temperature in the O III forbidden line formation region is 30,000 K, in agreement with the 20,000 K derived from observations. All models with conduction have extensive warm (T above 4000 K) photoionization zones, which provides better agreement with observed optical O I line strengths.

  5. Pure-oxygen radiative shocks with electron thermal conduction

    NASA Technical Reports Server (NTRS)

    Borkowski, Kazimierz J.; Shull, J. Michael

    1990-01-01

    Steady state radiative shock models in gas composed entirely of oxygen are calculated with the purpose of explaining observations of fast-moving knots in Cas A and other oxygen-rich SNRs. Models with electron thermal conduction differ significantly from models in which conduction is neglected. Conduction reduces postshock electron temperatures by a factor of 7-10 and flattens temperature gradients. The O III ion, whose forbidden emission usually dominates the observed spectra, is present over a wide range of shock velocities, from 100 to 170 km/s. The electron temperature in the O III forbidden line formation region is 30,000 K, in agreement with the 20,000 K derived from observations. All models with conduction have extensive warm (T above 4000 K) photoionization zones, which provides better agreement with observed optical O I line strengths.

  6. Anomalously low electronic thermal conductivity in metallic vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Lee, Sangwook; Hippalgaonkar, Kedar; Yang, Fan; Hong, Jiawang; Ko, Changhyun; Suh, Joonki; Liu, Kai; Wang, Kevin; Urban, Jeffrey J.; Zhang, Xiang; Dames, Chris; Hartnoll, Sean A.; Delaire, Olivier; Wu, Junqiao

    2017-01-01

    In electrically conductive solids, the Wiedemann-Franz law requires the electronic contribution to thermal conductivity to be proportional to electrical conductivity. Violations of the Wiedemann-Franz law are typically an indication of unconventional quasiparticle dynamics, such as inelastic scattering, or hydrodynamic collective motion of charge carriers, typically pronounced only at cryogenic temperatures. We report an order-of-magnitude breakdown of the Wiedemann-Franz law at high temperatures ranging from 240 to 340 kelvin in metallic vanadium dioxide in the vicinity of its metal-insulator transition. Different from previously established mechanisms, the unusually low electronic thermal conductivity is a signature of the absence of quasiparticles in a strongly correlated electron fluid where heat and charge diffuse independently.

  7. Anomalously low electronic thermal conductivity in metallic vanadium dioxide

    DOE PAGES

    Lee, Sangwook; Hippalgaonkar, Kedar; Yang, Fan; ...

    2017-01-26

    In electrically conductive solids, the Wiedemann-Franz law requires the electronic contribution to thermal conductivity to be proportional to electrical conductivity. Violations of the Wiedemann-Franz law are typically an indication of unconventional quasiparticle dynamics, such as inelastic scattering, or hydrodynamic collective motion of charge carriers, typically pronounced only at cryogenic temperatures. We report an order-of-magnitude breakdown of the Wiedemann-Franz law at high temperatures ranging from 240 to 340 kelvin in metallic vanadium dioxide in the vicinity of its metal-insulator transition. As a result, different from previously established mechanisms, the unusually low electronic thermal conductivity is a signature of the absence ofmore » quasiparticles in a strongly correlated electron fluid where heat and charge diffuse independently.« less

  8. Anomalously low electronic thermal conductivity in metallic vanadium dioxide.

    PubMed

    Lee, Sangwook; Hippalgaonkar, Kedar; Yang, Fan; Hong, Jiawang; Ko, Changhyun; Suh, Joonki; Liu, Kai; Wang, Kevin; Urban, Jeffrey J; Zhang, Xiang; Dames, Chris; Hartnoll, Sean A; Delaire, Olivier; Wu, Junqiao

    2017-01-27

    In electrically conductive solids, the Wiedemann-Franz law requires the electronic contribution to thermal conductivity to be proportional to electrical conductivity. Violations of the Wiedemann-Franz law are typically an indication of unconventional quasiparticle dynamics, such as inelastic scattering, or hydrodynamic collective motion of charge carriers, typically pronounced only at cryogenic temperatures. We report an order-of-magnitude breakdown of the Wiedemann-Franz law at high temperatures ranging from 240 to 340 kelvin in metallic vanadium dioxide in the vicinity of its metal-insulator transition. Different from previously established mechanisms, the unusually low electronic thermal conductivity is a signature of the absence of quasiparticles in a strongly correlated electron fluid where heat and charge diffuse independently.

  9. Terra MODIS band 27 electronic crosstalk: cause, impact, and mitigation

    NASA Astrophysics Data System (ADS)

    Sun, J.; Madhavan, S.; Wenny, B. N.; Xiong, X.

    2011-11-01

    MODIS-Terra is one of the key sensors in the suite of remote sensing instruments in the Earth Observing System (EOS). MODIS on the Terra platform was launched into orbit in December of 1999 and has successfully completed eleven plus years of operation. MODIS has 36 spectral channels with wavelengths varying from 0.4 μm to 14.4 μm. The native spatial resolutions for the reflective channels are 2 bands at 0.25 km, 5 bands at 0.5 km and 29 bands at 1km. However, the MODIS L1B product allows the high spatial resolution bands to be aggregated into 1km resolution. All the thermal channels in MODIS (i.e. 3.75μm - 14.24μm) have a native spatial resolution of 1 km. Over the eleven plus years of mission lifetime, the sensor degradation has been carefully monitored using various On-Board Calibrators (OBC). In particular, the thermal channels are monitored using the on-board Black-Body (BB) which is traceable to NIST standards. MODIS also has a unique feature for calibration reference in terms of lunar irradiance. The lunar observations are scheduled for MODIS periodically (at least 9 observations in a calendar year). Based on the lunar observations, it was found that there was a possible signal leak for band 27 from its neighboring bands located on the Long-Wave Infrared (LWIR) focal plane. Further investigations revealed a possible leak from bands 28, 29 and 30. The magnitude of the leak was trended and correction coefficients were derived. In this paper, we demonstrate the across-band signal leak in MODIS band 27, its potential impact on the retrieved Brightness temperature (B.T.). Also, the paper explores a correction methodology to relieve the artifacts due to the across-band signal leak. Finally, the improvement in the band 27 image quality is quantified.

  10. Nonlinear optical conductivity of a generic two-band system with application to doped and gapped graphene

    NASA Astrophysics Data System (ADS)

    Singh, Ashutosh; Bolotin, Kirill I.; Ghosh, Saikat; Agarwal, Amit

    2017-04-01

    We present a general formulation to calculate the dynamic interband optical conductivity, beyond the linear response regime, of any electronic system whose quasiparticle dispersion is described by a two-band model. Our formulation is based on the optical Bloch equations with phenomenological damping constants. In the nonlinear steady state regime it yields an analytic solution for the population inversion and the interband coherence, which are nonlinear in the optical field intensity, including finite doping and temperature effects. We explicitly show that the optical nonlinearities are controlled by a single dimensionless parameter which is directly proportional to the incident field strength and inversely proportional to the optical frequency. This identification leads to a unified way to study the dynamical conductivity and the differential transmission spectrum across a wide range of optical frequencies and optical field strengths. We use our formalism to analytically calculate the nonlinear interband optical conductivity of doped and gapped graphene, deriving the well known universal ac conductivity of σ0=e2/4 ℏ in the linear response regime of low optical intensities and nonlinear deviations from it which appear at high laser intensities including the impact of finite doping and band-gap opening.

  11. Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films

    DOE PAGES

    Baranowski, Lauryn L.; Christensen, Steven; Welch, Adam W.; ...

    2017-02-13

    In recent years, the number of novel photovoltaic absorber materials under exploration has rapidly increased. However, to reap the most benefit from these new absorbers, alternative device structures and components must also be considered. In particular, the choice of a heterojunction partner, or contact layer, is critical to device optimization. In this work, we explore alternative n-type contact layer candidates that could be widely applicable to a variety of new absorbers. We use theory to calculate the band edge tuning provided by a variety of II-VI alloy systems, and select the (Cd,Zn)S system as one that affords a wide rangemore » of conduction band tuning. The synthesis of (Cd,Zn)S alloys is explored using atomic layer deposition, which afforded precise compositional control and produced crystalline thin films. The predicted tuning of the band gap and conduction band minimum is confirmed through X-ray photoelectron spectroscopy and optical absorption measurements. In addition, we investigated Ga-doping in Cd0.6Zn0.4S films to decrease their series resistance when used as contact layers in photovoltaic devices. In conclusion, this study provides a framework for exploring and optimizing alternative contact layer materials, which will prove critical to the success of new PV absorbers.« less

  12. Estimation of π and σ band contributions in the normal state electrical conductivity of (Bi, Pb)-2223 added MgB2 superconductors

    NASA Astrophysics Data System (ADS)

    Tripathi, D.; Dey, T. K.

    2015-06-01

    Temperature dependence of the normal state electrical resistivity of polycrystalline MgB2 added with 0, 0.5, 1, 3 and 5 wt. % of (Bi, Pb)-2223 (Bi1.8Pb0.26Sr2Ca2Cu3O10+x) superconducting powder have been investigated in the light of two band approach based on π and σ bands of MgB2 superconductor. The scattering rates (γσ, γπ) and residual resistivity (ρ0σ,ρ0π) of each band are estimated for the investigated samples. Our observation for pure MgB2 shows much higher scattering rate in π bands, as compared to σ bands and hence indicates 'dirty' nature of the samples. However, the addition of 2223 in MgB2 is found to enhance the scattering rate in both bands, but the enhancement is more pronounced in π bands as compared to σ bands. Contribution of each individual band towards the total electrical conductivity of 2223 added MgB2 pellets are separated. Our analysis confirms that σ band contribution shows a small increase with 2223 addition and reaches nearly 89% for 5 wt. % 2223 added MgB2 polycrystalline pellets. The electron-phonon coupling constant (λ) of pure and 2223 added MgB2 pellets calculated using Mc-Millan expression is found to be nearly invariant with 2223 addition.

  13. Effect of Strain on Polaron Hopping and Electronic Conductivity in Bulk LiCoO2

    NASA Astrophysics Data System (ADS)

    Moradabadi, Ashkan; Kaghazchi, Payam

    2017-06-01

    We apply the concept of the "elastic dipole tensor" to study the effect of strain on polaron hopping and electronic conductivity in ionic crystals. As a model system, we choose the commercially used cathode material for Li-ion batteries, namely, LiCoO2 , which has a layered structure with alternating planes of oxygen, lithium, oxygen, and cobalt. It is demonstrated that the electronic conductivity of LiCoO2 increases (decreases) exponentially with compressive (tensile) strains. The results of the analytical elastic-dipole-tensor method are shown to be in good agreement with a direct approach in which migration barriers of polaron hopping as a function of strain are evaluated using density-functional-theory-based nudged elastic-band calculations. In a broader sense, the presented analytical approach can be used to study the effect of any induced or applied elastic strain field on the electronic conductivity of polarizable semiconductors and insulators.

  14. The problem of conductivity-type inversion in wide band gap II-VI compounds

    NASA Astrophysics Data System (ADS)

    Butkhuzi, T. V.; Tsekvava, B. E.; Kekelidze, N. P.; Chikoidze, E. G.; Khulordava, T. G.; Sharvashidze, M. M.

    1999-10-01

    To solve the problem of conductivity-type inversion in wide band gap II-VI compounds the thermodynamical analysis of intrinsic point defects has been performed. The existence of certain critical temperature of heat treatment in equilibrium conditions is shown. Above this temperature it is impossible to obtain the samples with stoichiometry deviation toward non-metals. At the temperatures lower than Tc, the diffusion processes in crystals are retarded and the equilibrium between II-VI crystals and B component vapour cannot be established (B is a component of a binary compound AB). Thus, it is shown that under thermodynamical equilibrium conditions it is impossible to obtain wide band gap II-VI compounds of p-type conductivity.

  15. Generation of banded chorus by a two-component energetic electron distribution in an inhomogeneous magnetic field

    NASA Astrophysics Data System (ADS)

    Huang, H.; Wang, Z. B.; Tao, X.; Wang, X. G.

    2017-10-01

    The generation of banded chorus by a two-component energetic electron distribution in a mirror-like inhomogeneous magnetic field is investigated in this work by a 1D hybrid code DAWN. A previous study by Liu et al. [Geophys. Res. Lett. 38, L14108 (2011)] suggested that banded chorus waves can be independently generated by two energetic electron populations. In this work, we first conduct a series of simulations to confirm that the starting frequency of chorus elements is close to the frequency of maximum linear growth rate. With carefully chosen simulation parameters, we then successfully generate banded chorus with a gap near half the electron gyrofrequency. By expanding the parameter range, however, we demonstrate that the gap can be located at frequencies other than the half electron gyrofrequency. We conclude that though the previous mechanism proposed by Liu et al. [Geophys. Res. Lett. 38, L14108 (2011)] can explain the relative independence of upper band and lower band chorus, further work is needed to explain why the linear properties of energetic electrons in the magnetosphere should produce a gap at 0.5Ωe0.

  16. Longitudinal and transverse vibration control of electronic conductance of a ladder-like graphene nanoribbon

    NASA Astrophysics Data System (ADS)

    Esmaili, Esmat; Mardaani, Mohammad; Rabani, Hassan

    2016-09-01

    The coherent electronic transport in a lengthy narrow nanoribbon, which the atoms of a part of it vibrate in some special modes, is modeled analytically within the tight-binding and harmonic approximations. For the small vibrations, the longitudinal and transverse modes are discussed separately. Two in-plane and one out-of-plane vibrating modes are assumed for the vibratory part which is considered as the center wire. The modes which cause the phononic excitations leading to electron-phonon (e-ph) interaction, are chosen in order to present exact analytic formulation. Moreover, we suppose that the bonds in the benzene rings in the center wire are the same or not the same as the rings in the other parts. We found that in-plane atomic vibrations have greater influence on the conductance with respect to the out-of-plane one. Since two conductance channels contribute in the transport, in the overlapping region of their energy bands, the conductance is affected more by the e-ph interaction. Furthermore, the increase electron scattering originating from decrease of electron group velocity, destroys the conductance at the edges of the system energy band.

  17. Biased doped silicene as a way to tune electronic conduction

    NASA Astrophysics Data System (ADS)

    Pogorelov, Y. G.; Loktev, V. M.

    2016-01-01

    Restructuring of the electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in the presence of certain impurity atoms is considered. Special attention is given to formation of localized impurity levels within the band gap and to their collectivization at finite impurity concentration. It is shown that a qualitative restructuring of the quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at a given impurity perturbation potential and concentration. Since these effects are expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronic devices.

  18. Recent advances of conductive nanocomposites in printed and flexible electronics

    NASA Astrophysics Data System (ADS)

    Khan, Saleem; Lorenzelli, Leandro

    2017-08-01

    Conductive nanocomposites have emerged as significant smart engineered materials for realizing flexible electronics on diverse substrates in recent years. Conductive nanocomposites are comprised of conductive fillers mixed with polymeric elastomer (e.g. polydimethylsiloxane). The possibility to tune electrical as well as mechanical properties of nanocomposites makes them suitable for a wide spectrum of applications including sensors and electronics on non-planar and stretchable surfaces. A number of conductive nanofillers and manufacturing technologies have been developed to meet the diverse requirements of various applications. Considering the substantial contribution of conductive nanocomposites, it is opportune time to review the potentials of various nanofillers, their synthesis, processing methodologies and challenges associated to them. This paper reviews conductive nanocomposites, especially in context with their use in the development of electronic components and the sensors exploiting the piezoresistive behavior. The paper is structured around the nanocomposites related studies aiming to develop various building blocks of flexible electronic skin systems such as pressure, touch, strain and temperature sensors as well as stretchable interconnects. Besides this, the use of nanocomposites in other stimulating industrial and biomedical applications has also been explored briefly.

  19. Calculation of 2D electronic band structure using matrix mechanics

    NASA Astrophysics Data System (ADS)

    Pavelich, R. L.; Marsiglio, F.

    2016-12-01

    We extend previous work, applying elementary matrix mechanics to one-dimensional periodic arrays (to generate energy bands), to two-dimensional arrays. We generate band structures for the square-lattice "2D Kronig-Penney model" (square wells), the "muffin-tin" potential (circular wells), and Gaussian wells. We then apply the method to periodic arrays of more than one atomic site in a unit cell, specifically to the case of materials with hexagonal lattices like graphene. These straightforward extensions of undergraduate-level calculations allow students to readily determine band structures of current research interest.

  20. Mechanism for Hall conductance of two-band systems against decoherence

    NASA Astrophysics Data System (ADS)

    Shen, H. Z.; Li, Hong; Peng, Y. F.; Yi, X. X.

    2017-04-01

    The Kubo formula expresses a linear response of the quantum system to weak classical fields. Previous studies showed that the environment degrades the quantum Hall conductance. By studying the dynamics of dissipative two-band systems, in this paper we find that the formation of system-environment bound states is responsible for the Hall conductance immune to the effect of the environment. The bound states can form only when the system-environment couplings are below a threshold. Our results may be of both theoretical and experimental interest in exploring dissipative topological insulators in realistic situations, and may open new perspectives for designing active quantum Hall devices working in realistic environments.

  1. Electron conductivity in warm and hot dense matter

    NASA Astrophysics Data System (ADS)

    Starrett, Charles; Charest, Marc; Feinblum, David; Burrill, Daniel

    2015-11-01

    The electronic conductivity of warm and hot dense matter is investigated by combining the Ziman-Evans approach with the recently developed pseudo-atom molecular dynamics (PAMD) method. PAMD gives an accurate description of the electronic and ionic structure of the plasma. The Ziman-Evans approach to conductivity, which takes the electronic and ionic structures as inputs, has been widely used but with numerous different assumptions on these inputs. Here we present a systematic study of these assumptions by comparing results to gold-standard QMD results that are thought to be accurate but are very expensive to produce. The study reveals that some assumptions yield very inaccurate results and should not be used, while others give consistently reasonable results. Finally, we show that the Thomas-Fermi version of PAMD can also be used to give accurate conductivities very rapidly, taking a few minutes per point on a single processor.

  2. Quasi-ballistic Electronic Thermal Conduction in Metal Inverse Opals.

    PubMed

    Barako, Michael T; Sood, Aditya; Zhang, Chi; Wang, Junjie; Kodama, Takashi; Asheghi, Mehdi; Zheng, Xiaolin; Braun, Paul V; Goodson, Kenneth E

    2016-04-13

    Porous metals are used in interfacial transport applications that leverage the combination of electrical and/or thermal conductivity and the large available surface area. As nanomaterials push toward smaller pore sizes to increase the total surface area and reduce diffusion length scales, electron conduction within the metal scaffold becomes suppressed due to increased surface scattering. Here we observe the transition from diffusive to quasi-ballistic thermal conduction using metal inverse opals (IOs), which are metal films that contain a periodic arrangement of interconnected spherical pores. As the material dimensions are reduced from ∼230 nm to ∼23 nm, the thermal conductivity of copper IOs is reduced by more than 57% due to the increase in surface scattering. In contrast, nickel IOs exhibit diffusive-like conduction and have a constant thermal conductivity over this size regime. The quasi-ballistic nature of electron transport at these length scales is modeled considering the inverse opal geometry, surface scattering, and grain boundaries. Understanding the characteristics of electron conduction at the nanoscale is essential to minimizing the total resistance of porous metals for interfacial transport applications, such as the total electrical resistance of battery electrodes and the total thermal resistance of microscale heat exchangers.

  3. Band gap aligned conducting interface modifier enhances the performance of thermal stable polymer-TiO2 nanorod solar cell

    NASA Astrophysics Data System (ADS)

    Huang, Yu-Ching; Yen, Wei-Che; Liao, Yu-Chia; Yu, Ya-Chien; Hsu, Cheng-Chih; Ho, Mei-Lin; Chou, Pi-Tai; Su, Wei-Fang

    2010-03-01

    In this paper, we show that the poly(3-hexyl-thiophene)/TiO2 nanorod hybrid material is more thermally stable than the poly(3-hexyl-thiophene)/[6,6]-phenyl C61-bntyric acid methyl ester (P3HT/PCBM) hybrid material. A metal free conducting interface modifier of oligo-3-hexyl thiophene carboxylic acid (oligo-3HT-COOH) has been synthesized that exhibits aligned band gap for the P3HT/TiO2 hybrid. The conducting modifier shows an increase in power conversion efficiency of 4.8 times over an insulating modifier of oleic acid and 2.2 folds improvement over small molecule modifier of pyridine. These increases are due to a reduced recombination rate (42 μs carrier life time) and fast electron injection time of 0.24 ps. This interface modifier makes thermally stable organic-inorganic hybrid materials useful for fabrication of all solution processable solar cells.

  4. Electronic properties of Janus silicene: new direct band gap semiconductors

    NASA Astrophysics Data System (ADS)

    Sun, Minglei; Ren, Qingqiang; Wang, Sake; Yu, Jin; Tang, Wencheng

    2016-11-01

    Using first-principles calculations, we propose a new class of materials, Janus silicene, which is silicene asymmetrically functionalized with hydrogen and halogen atoms. Formation energies and phonon dispersion indicated that all the Janus silicene systems exhibit good kinetic stability. As compared to silicane, all Janus silicene systems are direct band gap semiconductors. The band gap of Janus silicene can take any value between 1.91 and 2.66 eV by carefully tuning the chemical composition of the adatoms. In addition, biaxial elastic strain can further reduce the band gap to 1.11 eV (under a biaxial tensile strain up to 10%). According to moderate direct band gap, these materials demonstrate potential applications in optoelectronics, exhibiting a very wide spectral range, and they are expected to be highly stable under ambient conditions.

  5. Universal phase diagrams with superconducting domes for electronic flat bands

    NASA Astrophysics Data System (ADS)

    Löthman, Tomas; Black-Schaffer, Annica M.

    2017-08-01

    Condensed matter systems with flat bands close to the Fermi level generally exhibit, due to their very large density of states, extraordinarily high critical ordering temperatures of symmetry-breaking orders, such as superconductivity and magnetism. Here we show that the critical temperatures follow one of two universal curves with doping away from a flat band depending on the ordering channel, which completely dictates both the general order competition and the phase diagram. Notably, we find that orders in the particle-particle channel (superconducting orders) survive decisively farther than orders in the particle-hole channel (magnetic or charge orders) because the channels have fundamentally different polarizabilities. Thus, even if a magnetic or charge order initially dominates, superconducting domes are still likely to exist on the flanks of flat bands. We apply these general results to both the topological surface flat bands of rhombohedral ABC-stacked graphite and to the Van Hove singularity of graphene.

  6. Formation of ferromagnetic Co-H-Co complex and spin-polarized conduction band in Co-doped ZnO.

    PubMed

    Lee, Seunghun; Park, Ji Hun; Kim, Bum-Su; Cho, Deok-Yong; Choi, Yong Nam; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Doukyun; Cho, Chae Ryong; Moriyoshi, Chikako; Park, Chul Hong; Kuroiwa, Yoshihiro; Jeong, Se-Young

    2017-09-11

    Magnetic oxide semiconductors with wide band gaps have promising spintronic applications, especially in the case of magneto-optic devices. Co-doped ZnO (ZnCoO) has been considered for these applications, but the origin of its ferromagnetism has been controversial for several decades and no substantial progress for a practical application has been made to date. In this paper, we present direct evidence of hydrogen-mediated ferromagnetism and spin polarization in the conduction band of ZnCoO. Electron density mapping reveals the formation of Co-H-Co, in agreement with theoretical predictions. Electron spin resonance measurement elucidates the ferromagnetic nature of ZnCoO by the formation of Co-H-Co. We provide evidence from magnetic circular dichroism measurements supporting the hypothesis that Co-H-Co contributes to the spin polarization of the conduction band of hydrogen-doped ZnCoO.

  7. Hybrid metal-semiconductor cavities for multi-band perfect light absorbers and excellent electric conducting interfaces

    NASA Astrophysics Data System (ADS)

    Huang, Zhenping; Chen, Jian; Liu, Yi; Tang, Li; Liu, Guiqiang; Liu, Xiaoshan; Liu, Zhengqi

    2017-08-01

    It is desirable for optoelectronic devices to have the capability to simultaneously achieve excellent optical and electric features. Nevertheless, most investigations were performed separately for photon and electron management. In this work, we numerically propose and demonstrate a hybrid metal-semiconductor interface, which offers multi-band perfect light absorption and simultaneously retains the naturally perfect electrical conductivity of a flat metal film. Multi-band anti-reflection and near-unity light absorption is observed in this hybrid metal-semiconductor cavity based absorber (HMSA). Our results show that, the maximal absorption above 97% and the naturally perfect electric conductivity are realizable, suggesting the capability of providing both excellent optical and electric properties. Optical Mie-like resonances in the semiconductor cavities and the hybrid coupling with plasmonic resonances by the metal resonators cooperatively support strong optical field confinement effects, which eventually create the light trapped in the HMSA. These features indicate a platform wherein excellent electrical conducting and multispectral light absorption are designed for potential optoelectronic applications.

  8. Vertical photoionization of liquid-to-supercritical ammonia: thermal effects on the valence-to-conduction band gap.

    PubMed

    Urbanek, Janus; Vöhringer, Peter

    2013-07-25

    We recently reported first femtosecond pump–probe experiments on the geminate recombination dynamics of solvated electrons in fluid ammonia (Urbanek et al., J. Phys. Chem. B 2012, 116, 2223–2233). The electrons were generated through a vertical two-photon ionization at a total energy of 9.3 eV. Here, we present a full Monte Carlo analysis of the time-resolved data to determine the solvated electron’s thermalization distance from the ionization hole, NH(3)(+). The simulations are compared with the experiment over wide thermodynamic conditions to obtain insight into the dependence of the vertical ionization mechanism on the electronic properties of the solvent network. The simulations reveal that the average thermalization distance, , decreases strongly with both increasing temperature, T, and decreasing density, ρ, from 3.2 nm in the cryogenic fluid down to roughly 0.5 nm in the dilute supercritical phase with almost gas-like densities. We combine our results with the current understanding of the T,ρ-dependence of the electronic structure of the liquid phase and discuss in detail the role of thermally induced energy level shifts for the valence-to-conduction band gap. The observed changes of the thermalization distance can be well attributed to a gradual decrease of the excess energy initially imparted on the ejected electron as gas-like conditions are progressively approached.

  9. Molecular and electronic structure of the peptide subunit of Geobacter sulfurreducens conductive pili from first principles.

    PubMed

    Feliciano, Gustavo T; da Silva, Antonio J R; Reguera, Gemma; Artacho, Emilio

    2012-08-02

    The respiration of metal oxides by the bacterium Geobacter sulfurreducens requires the assembly of a small peptide (the GS pilin) into conductive filaments termed pili. We gained insights into the contribution of the GS pilin to the pilus conductivity by developing a homology model and performing molecular dynamics simulations of the pilin peptide in vacuo and in solution. The results were consistent with a predominantly helical peptide containing the conserved α-helix region required for pilin assembly but carrying a short carboxy-terminal random-coiled segment rather than the large globular head of other bacterial pilins. The electronic structure of the pilin was also explored from first principles and revealed a biphasic charge distribution along the pilin and a low electronic HOMO-LUMO gap, even in a wet environment. The low electronic band gap was the result of strong electrostatic fields generated by the alignment of the peptide bond dipoles in the pilin's α-helix and by charges from ions in solution and amino acids in the protein. The electronic structure also revealed some level of orbital delocalization in regions of the pilin containing aromatic amino acids and in spatial regions of high resonance where the HOMO and LUMO states are, which could provide an optimal environment for the hopping of electrons under thermal fluctuations. Hence, the structural and electronic features of the pilin revealed in these studies support the notion of a pilin peptide environment optimized for electron conduction.

  10. Inventory Control. Easily Made Electronic Device for Conductivity Experiments.

    ERIC Educational Resources Information Center

    Gadek, Frank J.

    1987-01-01

    Describes how to construct an electronic device to be used in conductivity experiments using a 35 millimeter film canister, nine volt battery replacement snaps, a 200-300 ohm resistor, and a light-emitting diode. Provides a diagram and photographs of the device. (TW)

  11. Inventory Control. Easily Made Electronic Device for Conductivity Experiments.

    ERIC Educational Resources Information Center

    Gadek, Frank J.

    1987-01-01

    Describes how to construct an electronic device to be used in conductivity experiments using a 35 millimeter film canister, nine volt battery replacement snaps, a 200-300 ohm resistor, and a light-emitting diode. Provides a diagram and photographs of the device. (TW)

  12. Electronically conductive ceramics for high temperature oxidizing environments

    DOEpatents

    Kucera, Gene H.; Smith, James L.; Sim, James W.

    1986-01-01

    A high temperature, ceramic composition having electronic conductivity as measured by resistivity below about 500 ohm-cm, chemical stability particularly with respect to cathode conditions in a molten carbonate fuel cell, and composed of an alkali metal, transition metal oxide containing a dopant metal in the crystalline structure to replace a portion of the alkali metal or transition metal.

  13. Electronically conductive ceramics for high temperature oxidizing environments

    DOEpatents

    Kucera, G.H.; Smith, J.L.; Sim, J.W.

    1983-11-10

    This invention pertains to a high temperature, ceramic composition having electronic conductivity as measured by resistivity below about 500 ohm-cm, chemical stability particularly with respect to cathode conditions in a molten carbonate fuel cell, and composed of an alkali metal, transition metal oxide containing a dopant metal in the crystalline structure to replace a portion of the alkali metal or transition metal.

  14. Higher-than-ballistic conduction of viscous electron flows.

    PubMed

    Guo, Haoyu; Ilseven, Ekin; Falkovich, Gregory; Levitov, Leonid S

    2017-03-21

    Strongly interacting electrons can move in a neatly coordinated way, reminiscent of the movement of viscous fluids. Here, we show that in viscous flows, interactions facilitate transport, allowing conductance to exceed the fundamental Landauer's ballistic limit [Formula: see text] The effect is particularly striking for the flow through a viscous point contact, a constriction exhibiting the quantum mechanical ballistic transport at [Formula: see text] but governed by electron hydrodynamics at elevated temperatures. We develop a theory of the ballistic-to-viscous crossover using an approach based on quasi-hydrodynamic variables. Conductance is found to obey an additive relation [Formula: see text], where the viscous contribution [Formula: see text] dominates over [Formula: see text] in the hydrodynamic limit. The superballistic, low-dissipation transport is a generic feature of viscous electronics.

  15. Ultrafast conductivity in a low-band-gap polyphenylene and fullerene blend studied by terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Němec, Hynek; Nienhuys, Han-Kwang; Perzon, Erik; Zhang, Fengling; Inganäs, Olle; Kužel, Petr; Sundström, Villy

    2009-06-01

    Time-resolved terahertz spectroscopy and Monte Carlo simulations of charge-carrier motion are used to investigate photoinduced transient conductivity in a blend of a low-band-gap polyphenylene copolymer and fullerene derivative. The optical excitation pulse generates free holes delocalized on polymer chains. We show that these holes exhibit a very high initial mobility as their initial excess energy facilitates their transport over defects (potential barriers) on polymer chains. The conductivity then drops down rapidly within 1 ps, and we demonstrate that this decrease occurs essentially by two mechanisms. First, the carriers loose their excess energy and they thus become progressively localized between the on-chain potential barriers—this results in a mobility decay with a rate of (180fs)-1 . Second, carriers are trapped at defects (potential wells) with a capture rate of (860fs)-1 . At longer time scales, populations of mobile and trapped holes reach a quasiequilibrium state and further conductivity decrease becomes very slow.

  16. g -factors of conduction electrons and holes in B i2S e3 three-dimensional topological insulator

    NASA Astrophysics Data System (ADS)

    Wolos, A.; Szyszko, S.; Drabinska, A.; Kaminska, M.; Strzelecka, S. G.; Hruban, A.; Materna, A.; Piersa, M.; Borysiuk, J.; Sobczak, K.; Konczykowski, M.

    2016-04-01

    Bulk-related conduction electron spin resonance and conduction hole spin resonance were investigated in B i2S e3 , a three-dimensional topological insulator. Electrons in the conduction band and holes in the valence band both have spin ½. The effective g -factors for conduction electrons are equal to 27.3 ± 0.15 for magnetic field parallel to the c axis and 19.48 ± 0.07 for magnetic field perpendicular to the c axis, whereas for conduction holes 29.90 ± 0.09 for magnetic field parallel and 18.96 ± 0.04 for magnetic field perpendicular to the c axis, respectively. Nonparabolicity effects were not observed in the investigated low carrier concentration range, below 8 ×1017c m-3 . Large g -factors, higher by an order of magnitude than the free electron value, are due to strong spin-orbit interactions in B i2S e3 . The striking similarity of the spin resonances due to conduction electrons and holes confirms the peculiar symmetry between the conduction and valence bands of B i2S e3 , both having similar effective masses and spin character.

  17. Microbial interspecies electron transfer via electric currents through conductive minerals

    PubMed Central

    Kato, Souichiro; Hashimoto, Kazuhito; Watanabe, Kazuya

    2012-01-01

    In anaerobic biota, reducing equivalents (electrons) are transferred between different species of microbes [interspecies electron transfer (IET)], establishing the basis of cooperative behaviors and community functions. IET mechanisms described so far are based on diffusion of redox chemical species and/or direct contact in cell aggregates. Here, we show another possibility that IET also occurs via electric currents through natural conductive minerals. Our investigation revealed that electrically conductive magnetite nanoparticles facilitated IET from Geobacter sulfurreducens to Thiobacillus denitrificans, accomplishing acetate oxidation coupled to nitrate reduction. This two-species cooperative catabolism also occurred, albeit one order of magnitude slower, in the presence of Fe ions that worked as diffusive redox species. Semiconductive and insulating iron-oxide nanoparticles did not accelerate the cooperative catabolism. Our results suggest that microbes use conductive mineral particles as conduits of electrons, resulting in efficient IET and cooperative catabolism. Furthermore, such natural mineral conduits are considered to provide ecological advantages for users, because their investments in IET can be reduced. Given that conductive minerals are ubiquitously and abundantly present in nature, electric interactions between microbes and conductive minerals may contribute greatly to the coupling of biogeochemical reactions. PMID:22665802

  18. Polypyrrole/Agarose-based electronically conductive and reversibly restorable hydrogel.

    PubMed

    Hur, Jaehyun; Im, Kyuhyun; Kim, Sang Won; Kim, Jineun; Chung, Dae-Young; Kim, Tae-Ho; Jo, Kyoung Ho; Hahn, Jong Hoon; Bao, Zhenan; Hwang, Sungwoo; Park, Nokyoung

    2014-10-28

    Conductive hydrogels are a class of composite materials that consist of hydrated and conducting polymers. Due to the mechanical similarity to biointerfaces such as human skin, conductive hydrogels have been primarily utilized as bioelectrodes, specifically neuroprosthetic electrodes, in an attempt to replace metallic electrodes by enhancing the mechanical properties and long-term stability of the electrodes within living organisms. Here, we report a conductive, smart hydrogel, which is thermoplastic and self-healing owing to its unique properties of reversible liquefaction and gelation in response to thermal stimuli. In addition, we demonstrated that our conductive hydrogel could be utilized to fabricate bendable, stretchable, and patternable electrodes directly on human skin. The excellent mechanical and thermal properties of our hydrogel make it potentially useful in a variety of biomedical applications such as electronic skin.

  19. Two-temperature radiative shocks with electron thermal conduction

    NASA Technical Reports Server (NTRS)

    Borkowski, Kazimierz J.; Shull, J. Michael; Mckee, Christopher F.

    1989-01-01

    The influence of electron thermal conduction on radiative shock structure is studied for both one- and two-temperature plasmas. The dimensionless ratio of the conductive length to the cooling length determines whether or not conduction is important, and shock jump conditions with conduction are established for a collisionless shock front. Approximate solutions are obtained, with the assumptions that the ionization state of the gas is constant and the cooling rate is a function of temperature alone. In the absence of magnetic fields, these solutions indicate that conduction noticeably influences normal-abundance interstellar shocks with velocities 50-100 km/s and dramatically affects metal-dominated shocks over a wide range of shock velocities.

  20. Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attraction

    NASA Astrophysics Data System (ADS)

    Poklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Zabrodskii, A. G.

    2011-12-01

    For nondegenerate bulk semiconductors, we have used the virial theorem to derive an expression for the temperature Tj of the transition from the regime of "free" motion of electrons in the c-band (or holes in the υ-band) to their hopping motion between donors (or acceptors). Distribution of impurities over the crystal was assumed to be of the Poisson type, while distribution of their energy levels was assumed to be of the Gaussian type. Our conception of the virial theorem implementation is that the transition from the band-like conduction to hopping conduction occurs when the average kinetic energy of an electron in the c-band (hole in the υ-band) is equal to the half of the absolute value of the average energy of the Coulomb interaction of an electron (hole) with the nearest neighbor ionized donor (acceptor). Calculations of Tj according to our model agree with experimental data for crystals of Ge, Si, diamond, etc. up to the concentrations of a hydrogen-like impurity, at which the phase insulator-metal transition (Mott transition) occurs. Under the temperature Th ≈ Tj /3, when the nearest neighbor hopping conduction via impurity atoms dominates, we obtained expressions for the electrostatic field screening length Λh in the Debye-Hückel approximation, taking into account a nonzero width of the impurity energy band. It is shown that the measurements of quasistatic capacitance of the semiconductor in a metal-insulator-semiconductor structure in the regime of the flat bands at the temperature Th allow to determine the concentration of doping impurity or its compensation ratio by knowing Λh.

  1. Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}

    SciTech Connect

    Green, R. J. St Onge, D. J.; Moewes, A.; Zatsepin, D. A.; Kurmaev, E. Z.; Gavrilov, N. V.; Zatsepin, A. F.

    2014-03-14

    Cobalt and manganese ions are implanted into SiO{sub 2} over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO{sub 2} valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO{sub 2} electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.

  2. Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

    NASA Astrophysics Data System (ADS)

    Bierwagen, Oliver

    2015-02-01

    The present review takes a semiconductor physics perspective to summarize the state-of-the art of In2O3 in relation to applications. After discussing conventional and novel applications, the crystal structure, synthesis of single-crystalline material, band-structure and optical transparency are briefly introduced before focussing on the charge carrier transport properties. The issues of unintentional n-type conductivity and its likely causes, the surface electron accumulation, and the lack of p-type conductivity will be presented. Intentional doping will be demonstrated to control the electron concentration and resistivity over a wide range, but is also subject to compensation. The control of the surface accumulation in relation to Schottky and ohmic contacts will be demonstrated. In the context of scattering mechanisms, the electron mobility and its limits will be discussed. Finally, the Seebeck coefficient and its significance will be shown, and ferromagnetic doping of In2O3 will be critically discussed. With this overview most if not all ingredients for the use of In2O3 as semiconductor material in novel or improved conventional devices will be given.

  3. Band edge electronic structure of transition metal/rare earth oxide dielectrics

    NASA Astrophysics Data System (ADS)

    Lucovsky, Gerald

    2006-10-01

    This article addresses band edge electronic structure of transition metal/rare earth (TM/RE) non-crystalline and nano-crystalline elemental and complex oxide high- k dielectrics for advanced semiconductor devices. Experimental approaches include X-ray absorption spectroscopy (XAS) from TM, RE and oxygen core states, photoconductivity (PC), and visible/vacuum ultra-violet (UV) spectroscopic ellipsometry (SE) combined with ab initio theory is applied to small clusters. These measurements are complemented by Fourier transform infra-red absorption (FTIR), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Two issues are highlighted: Jahn-Teller term splittings that remove d-state degeneracies of states at the bottom of the conduction band, and chemical phase separation and crystallinity in Zr and Hf silicates and ternary (Zr(Hf)O 2) x(Si 3N 4) y(SiO 2) 1- x- y alloys. Engineering solutions for optimization of both classes of high- k dielectric films, including limits imposed on the continued and ultimate scaling of the equivalent oxide thickness (EOT) are addressed.

  4. Visualizing One-Dimensional Electronic States and their Scattering in Semi-conducting Nanowires

    NASA Astrophysics Data System (ADS)

    Beidenkopf, Haim; Reiner, Jonathan; Norris, Andrew; Nayak, Abhay Kumar; Avraham, Nurit; Shtrikman, Hadas

    One-dimensional electronic systems constitute a fascinating playground for the emergence of exotic electronic effects and phases, within and beyond the Tomonaga-Luttinger liquid paradigm. More recently topological superconductivity and Majorana modes were added to that long list of phenomena. We report scanning tunneling microscopy and spectroscopy measurements conducted on pristine, epitaxialy grown InAs nanowires. We resolve the 1D electronic band structure manifested both via Van-Hove singularities in the local density-of-states, as well as by the quasi-particle interference patterns, induced by scattering from surface impurities. By studying the scattering of the one-dimensional electronic states off various scatterers, including crystallographic defects and the nanowire end, we identify new one-dimensional relaxation regimes and yet unexplored effects of interactions. Some of these may bear implications on the topological superconducting state and Majorana modes therein. The authors acknowledge support from the Israeli Science Foundation (ISF).

  5. Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper

    DOE PAGES

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-05

    Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results aremore » in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.« less

  6. Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper

    SciTech Connect

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-05

    Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results are in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.

  7. Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper

    SciTech Connect

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-05

    Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results are in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.

  8. Molecular Dynamics Simulations of Shocks Including Electronic Heat Conduction and Electron-Phonon Coupling

    NASA Astrophysics Data System (ADS)

    Ivanov, Dmitriy S.; Zhigilei, Leonid V.; Bringa, Eduardo M.; De Koning, Maurice; Remington, Bruce A.; Caturla, Maria Jose; Pollaine, Stephen M.

    2004-07-01

    Shocks are often simulated using the classical molecular dynamics (MD) method in which the electrons are not included explicitly and the interatomic interaction is described by an effective potential. As a result, the fast electronic heat conduction in metals and the coupling between the lattice vibrations and the electronic degrees of freedom can not be represented. Under conditions of steep temperature gradients that can form near the shock front, however, the electronic heat conduction can play an important part in redistribution of the thermal energy in the shocked target. We present the first atomistic simulation of a shock propagation including the electronic heat conduction and electron-phonon coupling. The computational model is based on the two-temperature model (TTM) that describes the time evolution of the lattice and electron temperatures by two coupled non-linear differential equations. In the combined TTM-MD method, MD substitutes the TTM equation for the lattice temperature. Simulations are performed with both MD and TTM-MD models for an EAM Al target shocked at 300 kbar. The target includes a tilt grain boundary, which provides a region where shock heating is more pronounced and, therefore, the effect of the electronic heat conduction is expected to be more important. We find that the differences between the predictions of the MD and TTM-MD simulations are significantly smaller as compared to the hydrodynamics calculations performed at similar conditions with and without electronic heat conduction.

  9. Detecting Electron Transport of Amino Acids by Using Conductance Measurement

    PubMed Central

    Li, Wei-Qiong; Huang, Bing; Huang, Miao-Ling; Peng, Lin-Lu; Hong, Ze-Wen; Zheng, Ju-Fang; Chen, Wen-Bo; Li, Jian-Feng; Zhou, Xiao-Shun

    2017-01-01

    The single molecular conductance of amino acids was measured by a scanning tunneling microscope (STM) break junction. Conductance measurement of alanine gives out two conductance values at 10−1.85 G0 (1095 nS) and 10−3.7 G0 (15.5 nS), while similar conductance values are also observed for aspartic acid and glutamic acid, which have one more carboxylic acid group compared with alanine. This may show that the backbone of NH2–C–COOH is the primary means of electron transport in the molecular junction of aspartic acid and glutamic acid. However, NH2–C–COOH is not the primary means of electron transport in the methionine junction, which may be caused by the strong interaction of the Au–SMe (methyl sulfide) bond for the methionine junction. The current work reveals the important role of the anchoring group in the electron transport in different amino acids junctions. PMID:28394265

  10. Micro-metric electronic patterning of a topological band structure using a photon beam

    PubMed Central

    Frantzeskakis, E.; De Jong, N.; Zwartsenberg, B.; Huang, Y. K.; Bay, T. V.; Pronk, P.; Van Heumen, E.; Wu, D.; Pan, Y.; Radovic, M.; Plumb, N. C.; Xu, N.; Shi, M.; De Visser, A.; Golden, M. S.

    2015-01-01

    In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi2−xSbxTe3−ySey with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi2−xSbxTe3−ySey crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi1.46Sb0.54Te1.7Se1.3 single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by ‘writing’ micron-sized letters in the Dirac point energy of the system. PMID:26543011

  11. Hydrogen production by tuning the photonic band gap with the electronic band gap of TiO₂.

    PubMed

    Waterhouse, G I N; Wahab, A K; Al-Oufi, M; Jovic, V; Anjum, D H; Sun-Waterhouse, D; Llorca, J; Idriss, H

    2013-10-10

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

  12. Effect of PEDOT band structure on conductive polymer-insulator-silicon junctions

    NASA Astrophysics Data System (ADS)

    Demtchenko, S.; Tarr, N. G.; McGarry, S.

    2017-08-01

    The effect of replacing a conventional metal with an organic conductive polymer in a metal-insulator-semiconductor (MIS) diode is examined theoretically and experimentally. Two sets of MIS diodes, one with gold and the other with poly(3,4-ethylenedioxythiophene) as the top "metal", have been manufactured in parallel. Despite the two conductors having similar reported work functions of 5.1 eV to 5.2 eV, the hybrid devices exhibited far lower current densities as compared to their inorganic counterparts. Simulating the device behaviour reveals the limited width of the energy bands in the conductive polymer as the reason for low current density in the hybrid MIS.

  13. Ab initio electronic band structure study of the valence bands of II-VI C(2 × 2) reconstructed surfaces

    NASA Astrophysics Data System (ADS)

    Rubio-Ponce, A.; Olguín, D.

    2015-01-01

    The structural and electronic properties of CdTe(001), CdSe(001), and ZnSe(001) C(2 x 2) reconstructed surfaces have been investigated through the use of first-principles calculations. To simulate the surface, we employed the slab model. Using the experimentally determined lattice parameters as inputs, we relaxed the internal atomic positions of the outer atomic layers. We demonstrate that our model appropriately reproduces both the surface structural parameters and the known electronic properties found for these semiconductor compounds in bulk. Finally, we discuss our results of the projected bulk bands and the surface and resonance states found for these surfaces.

  14. Formation of electron strings in narrow band polar semiconductors

    PubMed

    Kusmartsev

    2000-01-17

    We show that linear electron strings may arise in polar semiconductors. A single string consists of M spinless fermions trapped by an extended polarization well of a cigar shape. Inside the string the particles are free although they interact with each other via Coulomb forces. The strings arise as a result of an electronic phase separation associated with an instability of small adiabatic polarons. We have found the length of the string which depends on dielectric constants of semiconductors. The appearance of these electron strings may have an impact on the effect of stripe formation observed in a variety of high- T(c) experiments.

  15. Electronic conduction in a model three-terminal molecular transistor.

    PubMed

    He, Haiying; Pandey, Ravindra; Karna, Shashi P

    2008-12-17

    The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor, is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a pi-conjugated wire. The calculated results show the enhancement or depletion mode of a transistor on applying a gate field along the positive or negative direction. A small gate field is required to switch on the current in the proposed architecture. The changes in the electronic conduction can be attributed to the intrinsic dipolar molecular architecture in terms of the evolution of molecular wavefunctions, specifically the one associated with the terphenyl group of the modulating wire in the presence of the gate field.

  16. Ultrathin hetero-nanowire-based flexible electronics with tunable conductivity.

    PubMed

    Liu, Jian-Wei; Huang, Wei-Ran; Gong, Ming; Zhang, Meng; Wang, Jin-Long; Zheng, Jing; Yu, Shu-Hong

    2013-11-06

    Flexible hetero-nanowire electronics: A simple solution process has been developed for the first time to fabricate macroscopic flexible, ordered Au-Te hetero-nanowire film electronics with tunable resistance from MΩ to Ω at room temperature (see the Figure). Nanowire films with an electrical conductivity as low as 10,000 S cm(-1) and a sheet resistance of 15Ω sq(-1) can generate reliable interconnections for light-emitting diode (LED) arrays. The Au-Te hetero-nanowire films remain conductive after bending 6000 times with a maximum bending radius of 2.0 mm without any obvious degradation. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Mixed ionic and electronic conducting ceramic membranes for hydrocarbon processing

    DOEpatents

    Van Calcar, Pamela; Mackay, Richard; Sammells, Anthony F.

    2002-01-01

    The invention relates to mixed phase materials for the preparation of catalytic membranes which exhibit ionic and electronic conduction and which exhibit improved mechanical strength compared to single phase ionic and electronic conducting materials. The mixed phase materials are useful for forming gas impermeable membranes either as dense ceramic membranes or as dense thin films coated onto porous substrates. The membranes and materials of this invention are useful in catalytic membrane reactors in a variety of applications including synthesis gas production. One or more crystalline second phases are present in the mixed phase material at a level sufficient to enhance the mechanical strength of the mixture to provide membranes for practical application in CMRs.

  18. Electron Exchange and Conduction in Nontronite from First-Principles

    SciTech Connect

    Alexandrov, Vitali Y.; Neumann, Anke; Scherer, Michelle; Rosso, Kevin M.

    2013-01-11

    Fe-bearing clay minerals serve as an important source and sink for electrons in redox reactions in various subsurface geochemical environments, and electron transfer (ET) properties of the Fe2+/Fe3+ redox couple play a decisive role in a variety of physicochemical processes involving clays. Here, we apply first-principles calculations using both periodic GGA+U planewave and Hartree-Fock molecular-cluster frameworks in conjuction with small polaron hopping approach and Marcus electron transfer theory to examine electron exchange mobilities in an Fe-rich smectite, taking nontronite as a case study. GGA+U calculations of the activation barrier for small-polaron migration provide rates of electron hopping that agree very well with values deduced from variable temperature Mössbauer data (M. V. Schaefer, et. al., Environ. Sci. Technol. 45, 540, (2011)), indicating a surprisingly fast electron mobility at room temperature. Based on molecular cluster calculations, we show that the state with tetrahedral Fe2+ ion in the nontronite lattice is about 0.9 eV higher than the one with octahedral Fe2+. Also, evaluation of the ET rates for the Fe2+/Fe3+ electron hopping in tetrahedral (TS) and octahedral sheets (OS), as well as across the sheets (TS–OS) shows that the dominant contribution to the bulk electronic conductivity should come from the ET within the OS. Deprotonation of structural OH groups mediating ET between the Fe ions in the OS is found to decrease the internal reorganization energy and to increase the magnitude of the electronic coupling matrix element, whereas protonation (to OH2 groups) has the opposite effect. Overall, our calculations suggest that the major factors affecting ET rates are the nature and structure of the nearest-neighbor local environment and the degree of covalency of the bonds between Fe and ligands mediating electron hops. The generally higher reorganization energy and weaker electronic coupling found in Fe-bearing clay minerals leads to

  19. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics

    NASA Astrophysics Data System (ADS)

    Brandt, Riley E.; Young, Matthew; Park, Helen Hejin; Dameron, Arrelaine; Chua, Danny; Lee, Yun Seog; Teeter, Glenn; Gordon, Roy G.; Buonassisi, Tonio

    2014-12-01

    The development of cuprous oxide (Cu2O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu2O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO2, CdS, and Ga2O3. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu2O; the detrimental impact of this on open-circuit voltage (VOC) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga2O3, which both demonstrate slightly positive conduction-band offsets and high VOC potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

  20. New secondary batteries utilizing electronically conductive polymer cathodes

    NASA Technical Reports Server (NTRS)

    Martin, Charles R.; White, Ralph E.

    1987-01-01

    The objectives are to optimize the transport rates in electronically conductive polypyrrole films by controlling the morphology of the film and to assess the utility of these films as cathodes in a lithium/polypyrrole secondary battery. During this research period, a better understanding was gained of the fundamental electrochemical switching processes within the polypyrrole film. Three publications were submitted based on the work completed.

  1. Electronic thermal conductivity in a superconducting vortex state

    NASA Astrophysics Data System (ADS)

    Adachi, H.; Miranovic, P.; Ichioka, M.; Machida, K.

    2007-10-01

    The longitudinal component of the electronic thermal conductivity κxx in a superconducting vortex state is calculated as a function of magnetic field B. Calculations are performed by taking account of the spatial dependence of normal Green's function g, which was neglected in the previous studies using the Brandt-Pesch-Tewordt method. We discuss the possibility of using κxx(B) as a probe of the pair potential symmetry.

  2. High frequency conductivity of hot electrons in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Amekpewu, M.; Mensah, S. Y.; Musah, R.; Mensah, N. G.; Abukari, S. S.; Dompreh, K. A.

    2016-05-01

    High frequency conductivity of hot electrons in undoped single walled achiral Carbon Nanotubes (CNTs) under the influence of ac-dc driven fields was considered. We investigated semi-classically Boltzmann's transport equation with and without the presence of the hot electrons' source by deriving the current densities in CNTs. Plots of the normalized current density versus frequency of ac-field revealed an increase in both the minimum and maximum peaks of normalized current density at lower frequencies as a result of a strong injection of hot electrons. The applied ac-field plays a twofold role of suppressing the space-charge instability in CNTs and simultaneously pumping an energy for lower frequency generation and amplification of THz radiations. These have enormous promising applications in very different areas of science and technology.

  3. Partial electronic conductivity of nanocrystalline Na2O2

    NASA Astrophysics Data System (ADS)

    Philipp, M.; Lunghammer, S.; Hanzu, I.; Wilkening, M.

    2017-07-01

    Understanding charge carrier transport in Na2O2, being one of the possible storage materials in the non-aqueous Na-O2 battery, is key to the development of this type of energy storage system. The electronic and dynamic properties of Na2O2 are expected to greatly influence the overall performance and reversibility of the discharge process. Thus far experimental studies on this topic are rare. To measure the extremely low conductivities setups with sufficiently high sensitivity are needed. Here we studied the partial electronic conductivity σ eon of nanocrystalline Na2O2 by potentiostatic polarization measurements which we carried out at room temperature. σ eon turned out to be in the order of 8.8  ×  10-14 S cm-1 with a very poor total conductivity of σ total  =  17  ×  10-14 S cm-1 we obtained σ total/σ eon  ≈  2 clearly showing that ionic transport of Na ions is strongly coupled to electronic dynamics.

  4. Rearrangement of 1D conducting nanomaterials towards highly electrically conducting nanocomposite fibres for electronic textiles.

    PubMed

    Han, Joong Tark; Choi, Sua; Jang, Jeong In; Seol, Seung Kwon; Woo, Jong Seok; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2015-03-20

    Nanocarbon-based conducting fibres have been produced using solution- or dry-spinning techniques. Highly conductive polymer-composite fibres containing large amounts of conducting nanomaterials have not been produced without dispersants, however, because of the severe aggregation of conducting materials in high-concentration colloidal solutions. Here we show that highly conductive (electrical conductivity ~1.5 × 10(5) S m(-1)) polymer-composite fibres containing carbon nanotubes and silver nanowires can be fabricated via a conventional solution-spinning process without any other treatment. Spinning dopes were fabricated by a simple mixing of a polyvinyl alcohol solution in dimethylsulfoxide with a paste of long multi-walled carbon nanotubes dispersed in organic solvents, assisted by quadruple hydrogen-bonding networks and an aqueous silver nanowire dispersion. The high electrical conductivity of the fibre was achieved by rearrangement of silver nanowires towards the fibre skin during coagulation because of the selective favourable interaction between the silver nanowires and coagulation solvents. The prepared conducting fibres provide applications in electronic textiles such as a textile interconnector of light emitting diodes, flexible textile heaters, and touch gloves for capacitive touch sensors.

  5. Rearrangement of 1D Conducting Nanomaterials towards Highly Electrically Conducting Nanocomposite Fibres for Electronic Textiles

    PubMed Central

    Han, Joong Tark; Choi, Sua; Jang, Jeong In; Seol, Seung Kwon; Woo, Jong Seok; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2015-01-01

    Nanocarbon-based conducting fibres have been produced using solution- or dry-spinning techniques. Highly conductive polymer-composite fibres containing large amounts of conducting nanomaterials have not been produced without dispersants, however, because of the severe aggregation of conducting materials in high-concentration colloidal solutions. Here we show that highly conductive (electrical conductivity ~1.5 × 105 S m−1) polymer-composite fibres containing carbon nanotubes and silver nanowires can be fabricated via a conventional solution-spinning process without any other treatment. Spinning dopes were fabricated by a simple mixing of a polyvinyl alcohol solution in dimethylsulfoxide with a paste of long multi-walled carbon nanotubes dispersed in organic solvents, assisted by quadruple hydrogen-bonding networks and an aqueous silver nanowire dispersion. The high electrical conductivity of the fibre was achieved by rearrangement of silver nanowires towards the fibre skin during coagulation because of the selective favourable interaction between the silver nanowires and coagulation solvents. The prepared conducting fibres provide applications in electronic textiles such as a textile interconnector of light emitting diodes, flexible textile heaters, and touch gloves for capacitive touch sensors. PMID:25792333

  6. Rearrangement of 1D Conducting Nanomaterials towards Highly Electrically Conducting Nanocomposite Fibres for Electronic Textiles

    NASA Astrophysics Data System (ADS)

    Han, Joong Tark; Choi, Sua; Jang, Jeong In; Seol, Seung Kwon; Woo, Jong Seok; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2015-03-01

    Nanocarbon-based conducting fibres have been produced using solution- or dry-spinning techniques. Highly conductive polymer-composite fibres containing large amounts of conducting nanomaterials have not been produced without dispersants, however, because of the severe aggregation of conducting materials in high-concentration colloidal solutions. Here we show that highly conductive (electrical conductivity ~1.5 × 105 S m-1) polymer-composite fibres containing carbon nanotubes and silver nanowires can be fabricated via a conventional solution-spinning process without any other treatment. Spinning dopes were fabricated by a simple mixing of a polyvinyl alcohol solution in dimethylsulfoxide with a paste of long multi-walled carbon nanotubes dispersed in organic solvents, assisted by quadruple hydrogen-bonding networks and an aqueous silver nanowire dispersion. The high electrical conductivity of the fibre was achieved by rearrangement of silver nanowires towards the fibre skin during coagulation because of the selective favourable interaction between the silver nanowires and coagulation solvents. The prepared conducting fibres provide applications in electronic textiles such as a textile interconnector of light emitting diodes, flexible textile heaters, and touch gloves for capacitive touch sensors.

  7. Differential cross sections for electron impact excitation of the electronic bands of phenol

    SciTech Connect

    Neves, R. F. C.; Jones, D. B.; Lopes, M. C. A.; Nixon, K. L.; Silva, G. B. da; Duque, H. V.; Oliveira, E. M. de; Lima, M. A. P.; Costa, R. F. da; Varella, M. T. do N.; Bettega, M. H. F.; and others

    2015-03-14

    We report results from a joint theoretical and experimental investigation into electron scattering from the important organic species phenol (C{sub 6}H{sub 5}OH). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C{sub 6}H{sub 5}OH. The measurements were carried out at energies in the range 15–40 eV, and for scattered-electron angles between 10{sup ∘} and 90{sup ∘}. The energy resolution of those experiments was typically ∼80 meV. Corresponding Schwinger multichannel method with pseudo-potentials calculations, with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were conducted at the static exchange plus polarisation (SEP)-level using a minimum orbital basis for single configuration interaction (MOBSCI) approach. Agreement between the measured and calculated DCSs was typically fair, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOBSCI.

  8. Conformational statistics of molecules with inner rotation and shapes of their electronic absorption bands

    SciTech Connect

    Aver`yanov, E.M.

    1994-10-01

    The effect of conformational statistics of molecules with inner rotation of {pi}-conjugated fragments on the position, intensity, and electronic absorption band shapes is studied in isotropic molecular media. It is shown that the conformational disorder of molecules with one inner rotation degree of freedom exerts an appreciable effect on the shift, inhomogeneous broadening, and asymmetry of the electronic absorption bands. An interpretation of the available experimental data is give. 19 refs., 1 fig.

  9. Thermal conductance of electrons in graphene and stanene ribbons modulated via electron-phonon coupling

    NASA Astrophysics Data System (ADS)

    Peng, Xiao-Fang; Zhou, Xin; Jiang, Xiang-Tao; Gao, Ren-Bin; Tan, Shi-Hua; Chen, Ke-Qiu

    2017-08-01

    The thermal transport properties of the electrons in stanene nanoribbons (SNRs) and graphene nanoribbons (GNRs) are studied using a nonequilibrium Green's function approach in which the effects of electron-phonon coupling are considered. The results demonstrate that the electron thermal conductance values in both SNRs and GNRs are closely related to both the temperature T and the chemical potential μ. Comparison with the thermal transport properties of GNRs shows that the quantized thermal conductance plateau in SNRs is narrower at low temperatures, while the thermal conductance is also greater at higher temperatures in SNRs. The periodic strain-induced electron-phonon coupling can modulate the thermal conductance periodically in both SNRs and GNRs.

  10. Electronic structure of cerium hydrides: Augmented-plane-wave linear-combination-of-atomic-orbitals energy bands

    NASA Astrophysics Data System (ADS)

    Fujimori, A.; Minami, F.; Tsuda, N.

    1980-10-01

    Electronic energy bands have been calculated for CeH2 and CeH3 using the augmented-plane-wave method and have been fitted by the linear-combination-of-atomic-orbitals interpolation scheme. The partial densities of states and the numbers of electrons on atomic orbitals indicate that hydrogen in CeH2 is almost anionlike. When going from CeH2 to CeH3, shallow bonding levels are found to form between the third hydrogen state and conduction electrons of CeH2, other features of CeH2 being little affected by it. Thus the rare-earth dihydrides are regarded as ionic compounds similar to the saline-element dihydrides except for the presence of d-like conduction electrons.

  11. Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3

    PubMed Central

    Baniecki, John D.; Yamazaki, Takashi; Ricinschi, Dan; Van Overmeere, Quentin; Aso, Hiroyuki; Miyata, Yusuke; Yamada, Hiroaki; Fujimura, Norifumi; Maran, Ronald; Anazawa, Toshihisa; Valanoor, Nagarajan; Imanaka, Yoshihiko

    2017-01-01

    The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO3 (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scanning transmission electron microscopy with geometric phase analysis is used to resolve strain at atomic resolution. The VB electronic structure is strain state dependent in a manner that correlated with a directional change in Sn-O bond lengths with strain. However, VB offsets are found not to vary significantly with strain, which resulted in ascribing most of the difference in band alignment, due to a change in the band gaps with strain, to the conduction band edge. Our results reveal significant strain tuning of conduction band offsets using epitaxial buffer layers, with strain-induced offset differences as large as 0.6 eV possible for SrSnO3. Such large conduction band offset tunability through elastic strain control may provide a pathway to minimize the loss of charge confinement in 2-dimensional electron gases and enhance the performance of photoelectrochemical stannate-based devices. PMID:28195149

  12. Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3

    NASA Astrophysics Data System (ADS)

    Baniecki, John D.; Yamazaki, Takashi; Ricinschi, Dan; van Overmeere, Quentin; Aso, Hiroyuki; Miyata, Yusuke; Yamada, Hiroaki; Fujimura, Norifumi; Maran, Ronald; Anazawa, Toshihisa; Valanoor, Nagarajan; Imanaka, Yoshihiko

    2017-02-01

    The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO3 (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scanning transmission electron microscopy with geometric phase analysis is used to resolve strain at atomic resolution. The VB electronic structure is strain state dependent in a manner that correlated with a directional change in Sn-O bond lengths with strain. However, VB offsets are found not to vary significantly with strain, which resulted in ascribing most of the difference in band alignment, due to a change in the band gaps with strain, to the conduction band edge. Our results reveal significant strain tuning of conduction band offsets using epitaxial buffer layers, with strain-induced offset differences as large as 0.6 eV possible for SrSnO3. Such large conduction band offset tunability through elastic strain control may provide a pathway to minimize the loss of charge confinement in 2-dimensional electron gases and enhance the performance of photoelectrochemical stannate-based devices.

  13. Coherent Optical Control of Electronic Excitations in Wide-Band-Gap Semiconductor Structures

    DTIC Science & Technology

    2015-05-01

    ABSTRACT The main objective of this research is to study coherent quantum effects , such as Rabi oscillations in optical spectra of wide- band-gap...DRI) Research Objectives 1 2. Temperature Effects in the Kinetics of Photoexcited Carriers in Wide- Band-Gap Semiconductors 2 2.1 Theoretical...3 Fig. 2 Calculated polar optical scattering rate for the nonparabolic conduction band in GaN including the screening effect

  14. The effect of driven electron-phonon coupling on the electronic conductance of a polar nanowire

    SciTech Connect

    Mardaani, Mohammad Rabani, Hassan; Esmaili, Esmat; Shariati, Ashrafalsadat

    2015-08-07

    A semi-classical model is proposed to explore the effect of electron-phonon coupling on the coherent electronic transport of a polar chain which is confined between two rigid leads in the presence of an external electric field. To this end, we construct the model by means of Green's function technique within the nearest neighbor tight-binding and harmonic approximations. For a time-periodic electric field, the atomic displacements from the equilibrium positions are obtained precisely. The result is then used to compute the electronic transport properties of the chain within the Peierls-type model. The numerical results indicate that the conductance of the system shows interesting behavior in some special frequencies. For each special frequency, there is an electronic quasi-state in which the scattering of electrons by vibrating atoms reaches maximum. The system electronic conductance decreases dramatically at the strong electron-phonon couplings and low electron energies. In the presence of damping forces, the electron-phonon interaction has a less significant effect on the conductance.

  15. Strong Renormalization of the Electronic Band Gap due to Lattice Polarization in the GW Formalism

    NASA Astrophysics Data System (ADS)

    Botti, Silvana; Marques, Miguel A. L.

    2013-05-01

    The self-consistent GW band gaps are known to be significantly overestimated. We show that this overestimation is, to a large extent, due to the neglect of the contribution of the lattice polarization to the screening of the electron-electron interaction. To solve this problem, we derive within the GW formalism a generalized plasmon-pole model that accounts for lattice polarization. The resulting GW self-energy is used to calculate the band structures of a set of binary semiconductors and insulators. The lattice contribution always decreases the band gap. The shrinkage increases with the size of the longitudinal-transverse optical splitting and it can represent more than 15% of the band gap in highly polar compounds, reducing the band-gap percentage error by a factor of 3.

  16. Narrow-band anisotropic electronic structure of ReS2

    NASA Astrophysics Data System (ADS)

    Biswas, D.; Ganose, Alex M.; Yano, R.; Riley, J. M.; Bawden, L.; Clark, O. J.; Feng, J.; Collins-Mcintyre, L.; Sajjad, M. T.; Meevasana, W.; Kim, T. K.; Hoesch, M.; Rault, J. E.; Sasagawa, T.; Scanlon, David O.; King, P. D. C.

    2017-08-01

    We have used angle-resolved photoemission spectroscopy to investigate the band structure of ReS2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of structural distortion and spin-orbit coupling. We further show how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zigzag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone center along kz. These experiments are in good agreement with our density-functional theory calculations, shedding light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.

  17. Electronic conductivity studies on oxyhalide glasses containing TMO

    SciTech Connect

    Vijayatha, D.; Viswanatha, R.; Sujatha, B.; Narayana Reddy, C.

    2016-05-06

    Microwave-assisted synthesis is cleaner, more economical and much faster than conventional methods. The development of new routes for the synthesis of solid materials is an integral part of material science and technology. The electronic conductivity studies on xPbCl{sub 2} – 60 PbO – (40-x) V{sub 2}O{sub 5} (1 ≥ x ≤ 10) glass system has been carried out over a wide range of composition and temperature (300 K to 423 K). X-ray diffraction study confirms the amorphous nature of the samples. The Scanning electron microscopic studies reveal the formation of cluster like morphology in PbCl{sub 2} containing glasses. The d.c conductivity exhibits Arrhenius behaviour and increases with V{sub 2}O{sub 5} concentration. Analysis of the results is interpreted in view Austin-Mott’s small polaron model of electron transport. Activation energies calculated using regression analysis exhibit composition dependent trend and the variation is explained in view of the structure of lead-vanadate glass.

  18. Electronic conductivity studies on oxyhalide glasses containing TMO

    NASA Astrophysics Data System (ADS)

    Vijayatha, D.; Viswanatha, R.; Sujatha, B.; Narayana Reddy, C.

    2016-05-01

    Microwave-assisted synthesis is cleaner, more economical and much faster than conventional methods. The development of new routes for the synthesis of solid materials is an integral part of material science and technology. The electronic conductivity studies on xPbCl2 - 60 PbO - (40-x) V2O5 (1 ≥ x ≤ 10) glass system has been carried out over a wide range of composition and temperature (300 K to 423 K). X-ray diffraction study confirms the amorphous nature of the samples. The Scanning electron microscopic studies reveal the formation of cluster like morphology in PbCl2 containing glasses. The d.c conductivity exhibits Arrhenius behaviour and increases with V2O5 concentration. Analysis of the results is interpreted in view Austin-Mott's small polaron model of electron transport. Activation energies calculated using regression analysis exhibit composition dependent trend and the variation is explained in view of the structure of lead-vanadate glass.

  19. Vibrational renormalisation of the electronic band gap in hexagonal and cubic ice

    SciTech Connect

    Engel, Edgar A. Needs, Richard J.; Monserrat, Bartomeu

    2015-12-28

    Electron-phonon coupling in hexagonal and cubic water ice is studied using first-principles quantum mechanical methods. We consider 29 distinct hexagonal and cubic ice proton-orderings with up to 192 molecules in the simulation cell to account for proton-disorder. We find quantum zero-point vibrational corrections to the minimum electronic band gaps ranging from −1.5 to −1.7 eV, which leads to improved agreement between calculated and experimental band gaps. Anharmonic nuclear vibrations play a negligible role in determining the gaps. Deuterated ice has a smaller band-gap correction at zero-temperature of −1.2 to −1.4 eV. Vibrations reduce the differences between the electronic band gaps of different proton-orderings from around 0.17 eV to less than 0.05 eV, so that the electronic band gaps of hexagonal and cubic ice are almost independent of the proton-ordering when quantum nuclear vibrations are taken into account. The comparatively small reduction in the band gap over the temperature range 0 − 240 K of around 0.1 eV does not depend on the proton ordering, or whether the ice is protiated or deuterated, or hexagonal, or cubic. We explain this in terms of the atomistic origin of the strong electron-phonon coupling in ice.

  20. Vibrational renormalisation of the electronic band gap in hexagonal and cubic ice

    NASA Astrophysics Data System (ADS)

    Engel, Edgar A.; Monserrat, Bartomeu; Needs, Richard J.

    2015-12-01

    Electron-phonon coupling in hexagonal and cubic water ice is studied using first-principles quantum mechanical methods. We consider 29 distinct hexagonal and cubic ice proton-orderings with up to 192 molecules in the simulation cell to account for proton-disorder. We find quantum zero-point vibrational corrections to the minimum electronic band gaps ranging from -1.5 to -1.7 eV, which leads to improved agreement between calculated and experimental band gaps. Anharmonic nuclear vibrations play a negligible role in determining the gaps. Deuterated ice has a smaller band-gap correction at zero-temperature of -1.2 to -1.4 eV. Vibrations reduce the differences between the electronic band gaps of different proton-orderings from around 0.17 eV to less than 0.05 eV, so that the electronic band gaps of hexagonal and cubic ice are almost independent of the proton-ordering when quantum nuclear vibrations are taken into account. The comparatively small reduction in the band gap over the temperature range 0 - 240 K of around 0.1 eV does not depend on the proton ordering, or whether the ice is protiated or deuterated, or hexagonal, or cubic. We explain this in terms of the atomistic origin of the strong electron-phonon coupling in ice.

  1. Electronic band structures of graphene nanoribbons with self-passivating edge reconstructions

    NASA Astrophysics Data System (ADS)

    Nguyen, L. Tung; Pham, C. Huy; Nguyen, V. Lien

    2011-07-01

    Using the nearest-neighbor tight-binding approach we study the electronic band structures of graphene nanoribbons with self-passivating edge reconstructions. For zigzag ribbons the edge reconstruction moves both the Fermi energy and the flat band down by several hundred meV, and the flat band is always found to be below the Fermi energy. The states featured by the flat band are shown to be mainly localized at the atoms belonging to several lattice lines closest to the edges. For armchair ribbons the edge reconstruction strongly modifies the band structure in the region close to the Fermi energy, leading to the appearance of a band gap even for ribbons which were predicted to be metallic in the model of standard armchair edges. The gap widths are, however, strongly different in magnitude and behave in different ways regarding the ribbon width.

  2. A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Fulton, C. C.; Edge, L. F.; Lucovsky, G.; Lüning, J.

    2006-11-01

    Conduction band edge d-states are compared for complex oxides: (i) mixed tetravalent-trivalent ZrO 2-Y 2O 3 alloys, (ii) tetravalent Zr(Hf)O 2-TiO 2 alloys, and (iii) trivalent La scandate and aluminate. Low Y 2O 3 content cubic ZrO 2-Y 2O 3 alloys display two crystal-field split 4d-features in O K 1 spectra. Alloys with higher Y 2O 3 content, as well as Zr(Hf)O 2-TiO 2 alloys display increased d-state multiplicity. O K 1 spectra of perovskite-structured LaScO 3 and LaAlO 3 indicate Jahn-Teller d-state term-splittings with contributions from both trivalent atomic species.

  3. Waveguide Characterization of S-Band Microwave Mantle Cloaks for Dielectric and Conducting Objects.

    PubMed

    Vitiello, Antonino; Moccia, Massimo; Papari, Gian Paolo; D'Alterio, Giuliana; Vitiello, Roberto; Galdi, Vincenzo; Andreone, Antonello

    2016-01-25

    We present the experimental characterization of mantle cloaks designed so as to minimize the electromagnetic scattering of moderately-sized dielectric and conducting cylinders at S-band microwave frequencies. Our experimental setup is based on a parallel-plate waveguide system, which emulates a two-dimensional plane-wave scattering scenario, and allows the collection of near-field maps as well as more quantitative assessments in terms of global scattering observables (e.g., total scattering width). Our results, in fairly good agreement with full-wave numerical simulations, provide a further illustration of the mantle- cloak mechanism, including its frequency-sensitivity, and confirm its effectiveness both in restoring the near-field impinging wavefront around the scatterer, and in significantly reducing the overall scattering.

  4. Development of 256 x 256 Element Impurity Band Conduction Infrared Detector Arrays for Astronomy

    NASA Technical Reports Server (NTRS)

    Domingo, George

    1997-01-01

    This report describes the work performed on a one and a half year advance technology program to develop Impurity Band Conduction (IBC) detectors with very low dark current, high quantum efficiency, and with good repeatable processes. The program fabricated several epitaxial growths of Si:As detecting layers from 15 to 35 microns thick and analyzed the performance versus the thickness and the Arsenic concentration of these epitaxial layers. Some of the epitaxial runs did not yield because of excessive residual impurities. The thicker epitaxial layers and the ones with higher Arsenic concentration resulted in good detectors with low dark currents and good quantum efficiency. The program hybridized six detector die from the best detector wafers to a low noise, 256 x 256 readout array and delivered the hybrids to NASA Ames for a more detailed study of the performance of the detectors.

  5. Waveguide Characterization of S-Band Microwave Mantle Cloaks for Dielectric and Conducting Objects

    PubMed Central

    Vitiello, Antonino; Moccia, Massimo; Papari, Gian Paolo; D’Alterio, Giuliana; Vitiello, Roberto; Galdi, Vincenzo; Andreone, Antonello

    2016-01-01

    We present the experimental characterization of mantle cloaks designed so as to minimize the electromagnetic scattering of moderately-sized dielectric and conducting cylinders at S-band microwave frequencies. Our experimental setup is based on a parallel-plate waveguide system, which emulates a two-dimensional plane-wave scattering scenario, and allows the collection of near-field maps as well as more quantitative assessments in terms of global scattering observables (e.g., total scattering width). Our results, in fairly good agreement with full-wave numerical simulations, provide a further illustration of the mantle- cloak mechanism, including its frequency-sensitivity, and confirm its effectiveness both in restoring the near-field impinging wavefront around the scatterer, and in significantly reducing the overall scattering. PMID:26803985

  6. Experimental Observation of Quantum Confinement in the Conduction Band of CdSe Quantum Dots

    SciTech Connect

    Lee, J I; Meulenberg, R W; Hanif, K M; Mattoussi, H; Klepeis, J E; Terminello, L J; van Buuren, T

    2006-12-15

    Recent theoretical descriptions as to the magnitude of effect that quantum confinement has on he conduction band (CB) of CdSe quantum dots (QD) have been conflicting. In this manuscript, we experimentally identify quantum confinement effects in the CB of CdSe QDs for the first time. Using X-ray absorption spectroscopy, we have unambiguously witnessed the CB minimum shift to higher energy with decreasing particle size and have been able to compare these results to recent theories. Our experiments have been able to identify which theories correctly describe the CB states in CdSe QDs. In particular, our experiments suggest that multiple theories describe the shifts in the CB of CdSe QDs and are not mutually exclusive.

  7. Mixed oxygen ion/electron-conducting ceramics for oxygen separation

    SciTech Connect

    Stevenson, J.W.; Armstrong, T.R.; Armstrong, B.L.

    1996-08-01

    Mixed oxygen ion and electron-conducting ceramics are unique materials that can passively separate high purity oxygen from air. Oxygen ions move through a fully dense ceramic in response to an oxygen concentration gradient, charge-compensated by an electron flux in the opposite direction. Compositions in the system La{sub 1{minus}x}M{sub x}Co{sub 1{minus}y{minus}z}Fe{sub y}N{sub z}O{sub 3{minus}{delta}}, perovskites where M=Sr, Ca, and Ba, and N=Mn, Ni, Cu, Ti, and Al, have been prepared and their electrical, oxygen permeation, oxygen vacancy equilibria, and catalytic properties evaluated. Tubular forms, disks, and asymmetric membrane structures, a thin dense layer on a porous support of the same composition, have been fabricated for testing purposes. In an oxygen partial gradient, the passive oxygen flux through fully dense structures was highly dependent on composition. An increase in oxygen permeation with increased temperature is attributed to both enhanced oxygen vacancy mobility and higher vacancy populations. Highly acceptor-doped compositions resulted in oxygen ion mobilities more than an order of magnitude higher than yttria-stabilized zirconia. The mixed conducting ceramics have been utilized in a membrane reactor configuration to upgrade methane to ethane and ethylene. Conditions were established to balance selectivity and throughput in a catalytic membrane reactor constructed from mixed conducting ceramics.

  8. Electronic band structure of TiN/MgO nanostructures

    NASA Astrophysics Data System (ADS)

    Kobayashi, Kazuaki; Takaki, Hirokazu; Shimono, Masato; Kobayashi, Nobuhiko; Hirose, Kenji

    2017-04-01

    Various nanostructured TiN(001)/MgO(001) superlattices based on a repeated slab model with a vacuum region have been investigated by the total energy pseudopotential method. They are rectangular and rectangular parallelepiped TiN(001) dot structures on MgO(001)-2×2 and 3×3 substrates. A rectangular TiN(001) structure on a MgO(001)-2×1 substrate has also been calculated. Their detailed electronic and internal lattice properties were investigated systematically. The internal atomic coordinates in a unit cell were fully relaxed. The rectangular TiN(001) structure on the MgO(001)-2×1 superlattice, which is not a dot owing to its periodicity, corresponds to metallicity. The electronic states of relaxed rectangular TiN(001) dot/MgO(001)-2×2 and MgO(001)-3×3 superlattices are semiconducting. All relaxed rectangular parallelepiped TiN(001) dot/MgO(001)-2×2 and MgO(001)-3×3 superlattices correspond to metallicity. The electronic properties depend on the shape of the TiN dot and the size of the MgO substrate.

  9. Molecular Electronic Angular Motion Transducer Broad Band Self-Noise

    PubMed Central

    Zaitsev, Dmitry; Agafonov, Vadim; Egorov, Egor; Antonov, Alexander; Shabalina, Anna

    2015-01-01

    Modern molecular electronic transfer (MET) angular motion sensors combine high technical characteristics with low cost. Self-noise is one of the key characteristics which determine applications for MET sensors. However, until the present there has not been a model describing the sensor noise in the complete operating frequency range. The present work reports the results of an experimental study of the self-noise level of such sensors in the frequency range of 0.01–200 Hz. Based on the experimental data, a theoretical model is developed. According to the model, self-noise is conditioned by thermal hydrodynamic fluctuations of the operating fluid flow in the frequency range of 0.01–2 Hz. At the frequency range of 2–100 Hz, the noise power spectral density has a specific inversely proportional dependence of the power spectral density on the frequency that could be attributed to convective processes. In the high frequency range of 100–200 Hz, the noise is conditioned by the voltage noise of the electronics module input stage operational amplifiers and is heavily reliant to the sensor electrical impedance. The presented results allow a deeper understanding of the molecular electronic sensor noise nature to suggest the ways to reduce it. PMID:26610502

  10. k - dependent Jeff=1/2 band splitting and the electron-hole asymmetry in SrIrO3

    NASA Astrophysics Data System (ADS)

    Singh, Vijeta; Pulikkotil, J. J.

    2017-02-01

    The Ir ion in Srn+1 IrnO 3 n + 1 series of compounds is octahedrally coordinated. However, unlike Sr2IrO4 (n=1) and Sr3Ir2O7 (n=2) which are insulating due to spin-orbit induced Jeff splitting of the t2g bands, SrIrO3 (n= ∞) is conducting. To explore whether such a splitting is relevant in SrIrO3, and if so to what extent, we investigate the electronic structure of orthorhombic SrIrO3 using density functional theory. Calculations reveal that the crystal field split Ir t2 g bands in SrIrO3 are indeed split into Jeff=3/2 and and Jeff=1/2 states. However, the splitting is found to be strongly k - dependent with its magnitude determined by the Ir - O orbital hybridization. Besides, we find that the spin-orbit induced pseudo-gap, into which the Fermi energy is positioned, is composed of both light electron-like and heavy hole-like bands. These features in the band structure of SrIrO3 suggest that variations in the carrier concentration control the electronic transport properties in SrIrO3, which is consistent with the experiments.

  11. Shape of impurity electronic absorption bands in a nematic liquid crystal

    SciTech Connect

    Aver`yanov, E.M.

    1995-02-01

    It is shown that the anisotropic intermolecular impurity-matrix interactions, statistical orientation properties, and the electronic structure of the uniaxial impurity molecules considerably affect the spectral moments of the impurity electronic adsorption bands in a nematic liquid crystal. 15 refs., 3 figs.

  12. Nanoscale mapping of optical band gaps using monochromated electron energy loss spectroscopy.

    PubMed

    Zhan, W; Granerød, C S; Venkatachalapathy, V; Johansen, K M H; Jensen, I J T; Kuznetsov, A Yu; Prytz, Ø

    2017-03-10

    Using monochromated electron energy loss spectroscopy in a probe-corrected scanning transmission electron microscope we demonstrate band gap mapping in ZnO/ZnCdO thin films with a spatial resolution below 10 nm and spectral precision of 20 meV.

  13. Nanoscale mapping of optical band gaps using monochromated electron energy loss spectroscopy

    NASA Astrophysics Data System (ADS)

    Zhan, W.; Granerød, C. S.; Venkatachalapathy, V.; Johansen, K. M. H.; Jensen, I. J. T.; Kuznetsov, A. Yu; Prytz, Ø.

    2017-03-01

    Using monochromated electron energy loss spectroscopy in a probe-corrected scanning transmission electron microscope we demonstrate band gap mapping in ZnO/ZnCdO thin films with a spatial resolution below 10 nm and spectral precision of 20 meV.

  14. New secondary batteries utilizing electronically conductive polymer cathodes

    NASA Technical Reports Server (NTRS)

    Martin, Charles R.; White, Ralph E.

    1989-01-01

    The objectives of this project are to characterize the transport properties in electronically conductive polymers and to assess the utility of these films as cathodes in lithium/polymer secondary batteries. During this research period, progress has been made in a literature survey of the historical background, methods of preparation, the physical and chemical properties, and potential technological applications of polythiophene. Progress has also been made in the characterization of polypyrrole flat films and fibrillar films. Cyclic voltammetry and potential step chronocoulometry were used to gain information on peak currents and potentials switching reaction rates, charge capacity, and charge retention. Battery charge/discharge studies were also performed.

  15. New secondary batteries utilizing electronically conductive polymer cathodes

    NASA Technical Reports Server (NTRS)

    Martin, Charles R.; White, Ralph E.

    1989-01-01

    The objectives of this project are to optimize the transport rates in electronically conductive polypyrrole films by controlling the morphology of the film and to assess the utility of these films as cathodes in a lithium/polypyrrole secondary battery. During this research period, progress has been made in improving the charge transport rate of the supermolecular-engineered polypyrrole electrode by eliminating the polypyrrole baselayer that hampered earlier work. Also, the fibril density of the polypyrrole electrode was increased, providing more electroactive sites per unit area.

  16. Theory of electron conductance across a DNA basepair

    NASA Astrophysics Data System (ADS)

    Lee, Myeong; Sankey, Otto

    2008-03-01

    In recent years, research on electron tunneling through DNA basepairs has become more important due to its potential application in DNA sequencing technology. The goal is to recognize and identify a specific DNA base by measuring the hydrogen bond mediated tunneling current across a DNA basepair junction. In this talk, we discuss the results of density functional theory on the intrinsic conduction through DNA basepairs (Watson-Crick basepairs, Wobble basepairs, etc), and in particular the role of the hydrogen bond on the tunneling current.

  17. Thermal Conductance of a Single-Electron Transistor

    NASA Astrophysics Data System (ADS)

    Dutta, B.; Peltonen, J. T.; Antonenko, D. S.; Meschke, M.; Skvortsov, M. A.; Kubala, B.; König, J.; Winkelmann, C. B.; Courtois, H.; Pekola, J. P.

    2017-08-01

    We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances is found to be systematically violated away from the charge degeneracy points. The observed deviation agrees well with the theoretical expectation. With a large temperature drop between the source and drain, the heat current away from degeneracy deviates from the standard quadratic dependence in the two temperatures.

  18. Extreme ultraviolet narrow band emission from electron cyclotron resonance plasmas.

    PubMed

    Zhao, H Y; Zhao, H W; Sun, L T; Zhang, X Z; Wang, H; Ma, B H; Li, X X; Zhu, Y H; Sheng, L S; Zhang, G B; Tian, Y C

    2008-02-01

    Extreme ultraviolet lithography (EUVL) is considered as the most promising solution at and below dynamic random access memory 32 nm half pitch among the next generation lithography, and EUV light sources with high output power and sufficient lifetime are crucial for the realization of EUVL. However, there is no EUV light source completely meeting the requirements for the commercial application in lithography yet. Therefore, ECR plasma is proposed as a novel concept EUV light source. In order to investigate the feasibility of ECR plasma as a EUV light source, the narrow band EUV power around 13.5 nm emitted by two highly charged ECR ion sources -- LECR2M and SECRAL -- was measured with a calibrated EUV power measurement tool. Since the emission lines around 13.5 nm can be attributed to the 4d-5p transitions of Xe XI or the 4d-4f unresolved transition array of Sn VIII-XIII, xenon plasma was investigated. The dependence of the EUV throughput and the corresponding conversion efficiency on the parameters of the ion source, such as the rf power and the magnetic confinement configurations, were preliminarily studied.

  19. Topological band order, structural, electronic and optical properties of XPdBi (X = Lu, Sc) compounds

    NASA Astrophysics Data System (ADS)

    Narimani, M.; Nourbakhsh, Z.

    2016-05-01

    In this paper, the structural, electronic and optical properties of LuPdBi and ScPdBi compounds are investigated using the density functional theory by WIEN2K package within the generalized gradient approximation, local density approximation, Engel-Vosco generalized gradient approximations and modified Becke-Johnson potential approaches. The topological phases and band orders of these compounds are studied. The effect of pressure on band inversion strength, electron density of states and the linear coefficient of the electronic specific heat of these compounds is investigated. Furthermore, the effect of pressure on real and imaginary parts of dielectric function, absorption and reflectivity coefficients of these compounds is studied.

  20. Electronic Kapitza conductance at a diamond-Pb interface

    NASA Astrophysics Data System (ADS)

    Huberman, M. L.; Overhauser, A. W.

    1994-08-01

    In recent experiments it was found that the Kapitza conductance between diamond and Pb at room temperature is as much as 100 times larger than predicted by the acoustic mismatch model. Because the diamond and Pb are in intimate contact, the phonon modes near the interface are joint vibrational modes, extending a phonon mean free path on each side of the interface. Since the phonon mean-free path at room temperature is of the order of 4000 Å in diamond but only of the order of 10 Å in Pb, the energy of a joint mode resides primarily in the diamond. Consequently, the thermal population of a joint mode is determined by the temperature of the diamond. It is shown here that the direct energy transfer between metallic electrons at the Pb temperature and joint vibrational modes at the diamond temperature explains the observed heat conduction across the interface.

  1. Electronic conduction in La-based perovskite-type oxides

    PubMed Central

    Ohbayashi, Kazushige; Koumoto, Kunihito

    2015-01-01

    A systematic study of La-based perovskite-type oxides from the viewpoint of their electronic conduction properties was performed. LaCo0.5Ni0.5O3±δ was found to be a promising candidate as a replacement for standard metals used in oxide electrodes and wiring that are operated at temperatures up to 1173 K in air because of its high electrical conductivity and stability at high temperatures. LaCo0.5Ni0.5O3±δ exhibits a high conductivity of 1.9 × 103 S cm−1 at room temperature (R.T.) because of a high carrier concentration n of 2.2 × 1022 cm−3 and a small effective mass m∗ of 0.10 me. Notably, LaCo0.5Ni0.5O3±δ exhibits this high electrical conductivity from R.T. to 1173 K, and little change in the oxygen content occurs under these conditions. LaCo0.5Ni0.5O3±δ is the most suitable for the fabrication of oxide electrodes and wiring, though La1−xSrxCoO3±δ and La1−xSrxMnO3±δ also exhibit high electronic conductivity at R.T., with maximum electrical conductivities of 4.4 × 103 S cm−1 for La0.5Sr0.5CoO3±δ and 1.5 × 103 S cm−1 for La0.6Sr0.4MnO3±δ because oxygen release occurs in La1−xSrxCoO3±δ as elevating temperature and the electrical conductivity of La0.6Sr0.4MnO3±δ slightly decreases at temperatures above 400 K. PMID:27877778

  2. Exploring the Electronic Band Structure of Organometal Halide Perovskite via Photoluminescence Anisotropy of Individual Nanocrystals.

    PubMed

    Täuber, Daniela; Dobrovolsky, Alexander; Camacho, Rafael; Scheblykin, Ivan G

    2016-08-10

    Understanding electronic processes in organometal halide perovskites, flourishing photovoltaic, and emitting materials requires unraveling the origin of their electronic transitions. Light polarization studies can provide important information regarding transition dipole moment orientations. Investigating individual methylammonium lead triiodide perovskite nanocrystals enabled us to detect the polarization of photoluminescence intensity and photoluminescence excitation, hidden in bulk samples by ensemble averaging. Polarization properties of the crystals were correlated with their photoluminescence spectra and electron microscopy images. We propose that distortion of PbI6 octahedra leads to peculiarities of the electronic band structure close to the band-edge. Namely, the lowest band transition possesses a transition dipole moment along the apical Pb-I-Pb bond resulting in polarized photoluminescence. Excitation of photoluminescence above the bandgap is unpolarized because it involves molecular orbitals delocalized both in the apical and equatorial directions of the perovskite octahedron. Trap-assisted emission at 77 K, rather surprisingly, was polarized similar to the bandgap emission.

  3. Band structure and Fermi surface of electron-doped C60 monolayers.

    PubMed

    Yang, W L; Brouet, V; Zhou, X J; Choi, Hyoung J; Louie, Steven G; Cohen, Marvin L; Kellar, S A; Bogdanov, P V; Lanzara, A; Goldoni, A; Parmigiani, F; Hussain, Z; Shen, Z-X

    2003-04-11

    C60 fullerides are challenging systems because both the electron-phonon and electron-electron interactions are large on the energy scale of the expected narrow band width. We report angle-resolved photoemission data on the band dispersion for an alkali-doped C60 monolayer and a detailed comparison with theory. Compared to the maximum bare theoretical band width of 170 meV, the observed 100-meV dispersion is within the range of renormalization by electron-phonon coupling. This dispersion is only a fraction of the integrated peak width, revealing the importance of many-body effects. Additionally, measurements on the Fermi surface indicate the robustness of the Luttinger theorem even for materials with strong interactions.

  4. Band gaps, ionization potentials, and electron affinities of periodic electron systems via the adiabatic-connection fluctuation-dissipation theorem

    NASA Astrophysics Data System (ADS)

    Trushin, Egor; Betzinger, Markus; Blügel, Stefan; Görling, Andreas

    2016-08-01

    An approach to calculate fundamental band gaps, ionization energies, and electron affinities of periodic electron systems is explored. Starting from total energies obtained with the help of the adiabatic-connection fluctuation-dissipation (ACFD) theorem, these physical observables are calculated according to their basic definition by differences of the total energies of the N -, (N -1 ) -, and (N +1 ) -electron system. The response functions entering the ACFD theorem are approximated here by the direct random phase approximation (dRPA). For a set of prototypical semiconductors and insulators it is shown that even with this quite drastic approximation the resulting band gaps are very close to experiment and of a similar quality to those from the computationally more involved G W approximation. By going beyond the dRPA in the future the accuracy of the calculated band gaps may be significantly improved further.

  5. Theory of thermal conductivity in the disordered electron liquid

    SciTech Connect

    Schwiete, G.; Finkel’stein, A. M.

    2016-03-15

    We study thermal conductivity in the disordered two-dimensional electron liquid in the presence of long-range Coulomb interactions. We describe a microscopic analysis of the problem using the partition function defined on the Keldysh contour as a starting point. We extend the renormalization group (RG) analysis developed for thermal transport in the disordered Fermi liquid and include scattering processes induced by the long-range Coulomb interaction in the sub-temperature energy range. For the thermal conductivity, unlike for the electrical conductivity, these scattering processes yield a logarithmic correction that may compete with the RG corrections. The interest in this correction arises from the fact that it violates the Wiedemann–Franz law. We checked that the sub-temperature correction to the thermal conductivity is not modified either by the inclusion of Fermi liquid interaction amplitudes or as a result of the RG flow. We therefore expect that the answer obtained for this correction is final. We use the theory to describe thermal transport on the metallic side of the metal–insulator transition in Si MOSFETs.

  6. Theory of thermal conductivity in the disordered electron liquid

    NASA Astrophysics Data System (ADS)

    Schwiete, G.; Finkel'stein, A. M.

    2016-03-01

    We study thermal conductivity in the disordered two-dimensional electron liquid in the presence of long-range Coulomb interactions. We describe a microscopic analysis of the problem using the partition function defined on the Keldysh contour as a starting point. We extend the renormalization group (RG) analysis developed for thermal transport in the disordered Fermi liquid and include scattering processes induced by the long-range Coulomb interaction in the sub-temperature energy range. For the thermal conductivity, unlike for the electrical conductivity, these scattering processes yield a logarithmic correction that may compete with the RG corrections. The interest in this correction arises from the fact that it violates the Wiedemann-Franz law. We checked that the sub-temperature correction to the thermal conductivity is not modified either by the inclusion of Fermi liquid interaction amplitudes or as a result of the RG flow. We therefore expect that the answer obtained for this correction is final. We use the theory to describe thermal transport on the metallic side of the metal-insulator transition in Si MOSFETs.

  7. Electrically Conductive Photopatternable Silver Paste for High-Frequency Ring Resonator and Band-Pass Filter

    NASA Astrophysics Data System (ADS)

    Umarji, Govind; Qureshi, Nilam; Gosavi, Suresh; Mulik, Uttam; Kulkarni, Atul; Kim, Taesung; Amalnerkar, Dinesh

    2017-02-01

    In conventional thick-film technology, there are often problems associated with poor edges, rough surfaces, and reproducibility due to process limitations, especially for high-frequency applications. These difficulties can be circumvented by using thin-film technology, but process cost and complexity remain major concerns. In this context, photopatternable thick-film technology can offer a viable alternative due to its Newtonian rheology, which can facilitate formation of the required sharp edges. We present herein a unique attempt to formulate a photopatternable silver paste with organic (photosensitive polymer) to inorganic (silver and glass) ratio of 30:70, developed in-house by us for fabrication of thick-film-based ring resonator and band-pass filter components. The ring resonator and band-pass component structures were realized by exposing screen-printed film to ultraviolet light at wavelength of 315 nm to 400 nm for 30 s to crosslink the photosensitive polymer. The pattern was subsequently developed using 1% sodium carbonate aqueous solution. For comparison, conventional silver and silver-palladium thick films were produced using in-house formulations. The surface topology and microstructural features were examined by stereomicroscopy and scanning electron microscopy. The smoothness and edge definition of the film were assessed by profilometry. The resistivity of the samples was observed and remained in the range from 3.4 μΩ cm to 3.6 μΩ cm. The electrical properties were compared by measuring the insertion loss characteristics. The results revealed that the ring resonator fabricated using the photopatternable silver paste exhibited better high-frequency properties compared with components based on conventional silver or silver-palladium paste, especially in terms of the resonant frequency of 10.1 GHz (versus 10 GHz designed) with bandwidth of 80 MHz. Additionally, the band-pass filter fabricated using the photopatternable silver paste displayed better

  8. Structure and electronic properties of conducting, ternary TixTa1-xN films

    NASA Astrophysics Data System (ADS)

    Matenoglou, G. M.; Lekka, Ch. E.; Koutsokeras, L. E.; Karras, G.; Kosmidis, C.; Evangelakis, G. A.; Patsalas, P.

    2009-05-01

    We report on the electronic structure and optical properties of conducting ternary transition metal nitrides consisting of metals of different groups of the periodic table of elements. For the study of the bonding, electronic structure, and optical properties of conducting TixTa1-xN film growth, optical spectroscopy and ab initio calculations were used. Despite the different valence electron configuration of the constituent elements, Ta(d3s2) and Ti(d2s2), we show that TiN and TaN are completely soluble due to the hybridization of the d and sp electrons of the metals and N, respectively, that stabilizes the ternary TixTa1-xN systems to the rocksalt structure. The optical properties of TixTa1-xN have been studied using spectroscopic methods and detailed electronic structure calculations, revealing that the plasma energy of the fully dense TixTa1-xN is varying between 7.8 and 9.45 eV. Additional optical absorption bands are manifested due to the N p →Ti/Ta d interband transition the t2g→eg transition due to splitting of the metals' d band, with the major exception of the Ti0.50Ta0.50N, where the eg unoccupied states are not manifested due to the local structure of the ternary system; this finding is observed for the first time and proves previous assignments of optical transitions in TaN.

  9. The effect of contact barriers on space-charge-limited current injection in impurity-band-conduction photodetectors

    NASA Astrophysics Data System (ADS)

    Martin, B. G.

    1994-05-01

    A theoretical investigation was made on the effect of contact barriers on space-charge-limited (SCL) current injection in impurity-band-conduction (IBC) photodetectors. Parmenter and Ruppel [J. Appl. Phys. 30, 1548 (1959)] considered the effect of contact barriers on SCL current injection in insulators. They solved the steady-state, one-dimensional transport equations, obtaining the solution in terms of integrals, which they evaluated for certain limiting cases. We have modified their approach by using the current injection ratios at the contacts as boundary conditions. This is a very general formulation that can be used for any type of contact barrier. We then applied this technique to model contact barriers in IBC devices. The fact that the IBC hopping mobility is several orders of magnitude smaller than the electron mobility enables us to evaluate the integrals and obtain a closed form solution to the transport equations. Calculated results include current versus voltage behavior, electrostatic potential and electric field versus position for a given bias. It is concluded that the injected electron current is dominant for the store-mode applied bias.

  10. Quantification and impact of nonparabolicity of the conduction band of indium tin oxide on its plasmonic properties

    SciTech Connect

    Liu, Xiaoge; Park, Junghyun; Kang, Ju-Hyung; Yuan, Hongtao; Cui, Yi; Hwang, Harold Y.; Brongersma, Mark L.

    2014-11-03

    Doped indium tin oxide (ITO) behaves as a Drude metal with a plasma frequency that is controlled by its free carrier density. In this work, we systematically tune this frequency across the mid-infrared range by annealing treatments in a reducing environment that produce high electron concentrations (∼10{sup 21 }cm{sup −3}). The changes in ITO's optical properties that result from the changes in carrier density are measured by attenuated total reflection measurements. These optical frequency measurements are complemented by Hall measurements to obtain a comprehensive picture of the Drude response of the ITO films. It was found that a complete description of the optical properties at very high carrier densities needs to account for the nonparabolicity of the conduction band of ITO and a reduced carrier mobility. More specifically, an increase in carrier concentration from 6.2 × 10{sup 19 }cm{sup −3} to 1.4 × 10{sup 21 }cm{sup −3} comes with a change of the effective electron mass from 0.35 m{sub 0} to 0.53 m{sub 0} and a decrease in the optical frequency mobility from about 20 cm{sup 2} V{sup −1} s{sup −1} to 9 cm{sup 2} V{sup −1} s{sup −1}.

  11. Electronic structure and conductivity of ferroelectric hexaferrite: Ab initio calculations

    NASA Astrophysics Data System (ADS)

    Knížek, K.; Novák, P.; Küpferling, M.

    2006-04-01

    Ba0.5Sr1.5Zn2Fe12O22 is a promising multiferroic compound in which the electric polarization is intimately connected to the magnetic state. In principle, ferroelectrity might exist above the room temperature, but the electrical conductivity that increases with increasing temperature limits it to temperatures below ≈130K . We present results of an ab initio electronic structure calculation of the (BaSr)Zn2Fe12O22 system. To improve the description of strongly correlated 3d electrons of iron, the GGA+U method is used. The results show that the electrical conductivity strongly depends on relative fractions of iron and zinc in the tetrahedral sublattice that belongs to the spinel block of the hexaferrite structure. If this sublattice is fully occupied by zinc, the system is an insulator with a gap of ≈1.5eV . If it is occupied equally by Fe and Zn the gap decreases by a factor of 2, and the system is metallic when this sublattice is filled by iron only.

  12. Electronic and ionic conductivities in superionic Li4C60

    NASA Astrophysics Data System (ADS)

    Quintavalle, D.; Márkus, B. G.; Jánossy, A.; Simon, F.; Klupp, G.; Győri, M. A.; Kamarás, K.; Magnani, G.; Pontiroli, D.; Riccò, M.

    2016-05-01

    The 10 GHz microwave conductivity, σ (T ) and high field, 222 GHz electron spin resonance (HF-ESR) of Li4C60 fulleride is measured in a wide temperature range. We suggest that the majority of ESR active sites and at least some of the charge carriers for σ (T ) are electrons bound to a small concentration of surplus or vacancy ions in the polymer phase. Both σ (T ) and the ESR line shape depend on ionic motion. A change of the activation energy of σ (T ) at 125 K coincides with the onset of the ionic DC conductivity. The ESR line shape is determined mainly by Li ionic motion within octahedral voids below 150 K. At higher temperatures, fluctuations due to ionic diffusion change the environment of defects from axial to effectively isotropic on the ESR time scale. σ (T ) data up to 700 K through the depolymerization transition confirm that the monomeric phase of Li4C60 is a metal.

  13. Higher-than-ballistic conduction of viscous electron flows

    NASA Astrophysics Data System (ADS)

    Guo, Haoyu; Ilseven, Ekin; Falkovich, Gregory; Levitov, Leonid S.

    2017-03-01

    Strongly interacting electrons can move in a neatly coordinated way, reminiscent of the movement of viscous fluids. Here, we show that in viscous flows, interactions facilitate transport, allowing conductance to exceed the fundamental Landauer’s ballistic limit GballGball. The effect is particularly striking for the flow through a viscous point contact, a constriction exhibiting the quantum mechanical ballistic transport at T=0T=0 but governed by electron hydrodynamics at elevated temperatures. We develop a theory of the ballistic-to-viscous crossover using an approach based on quasi-hydrodynamic variables. Conductance is found to obey an additive relation G=Gball+GvisG=Gball+Gvis, where the viscous contribution GvisGvis dominates over GballGball in the hydrodynamic limit. The superballistic, low-dissipation transport is a generic feature of viscous electronics.

  14. Interaction of Cr3+ with valence and conduction bands in the long persistent phosphor ZnGa2O4:Cr3+, studied by ENDOR spectroscopy

    NASA Astrophysics Data System (ADS)

    Binet, Laurent; Sharma, Suchinder K.; Gourier, Didier

    2016-09-01

    Cr3+-doped zinc gallate ZnGa2O4 is a red-near infrared (IR) long persistent phosphor that can be excited by orange-red light, in the transparency window of living tissues. With this property, persistent luminescence nanoparticles were recently used for in vivo optical imaging of tumors in mice. In order to understand the origin of the excitability of persistent luminescence by visible light in this material, a Q-band ENDOR investigation of 71/69Ga and 53Cr nuclei was performed in ZnGa2O4:Cr3+ to get information on the interaction of Cr3+ with valence and conduction bands. The positive electron spin density at Ga nuclei revealed a dominant interaction of the 4A2 ground state of Cr3+ with the valence band, and a weaker interaction with the conduction band. The latter may occur only in the excited 2E and 4T2 states of Cr3+. It is proposed that when these two interactions are present, pairs of electrons and holes can be generated from excited Cr3+ in distorted sites undergoing local electric field produced by neighboring defects with opposite charges.

  15. Interaction of Cr(3+) with valence and conduction bands in the long persistent phosphor ZnGa2O4:Cr(3+), studied by ENDOR spectroscopy.

    PubMed

    Binet, Laurent; Sharma, Suchinder K; Gourier, Didier

    2016-09-28

    Cr(3+)-doped zinc gallate ZnGa2O4 is a red-near infrared (IR) long persistent phosphor that can be excited by orange-red light, in the transparency window of living tissues. With this property, persistent luminescence nanoparticles were recently used for in vivo optical imaging of tumors in mice. In order to understand the origin of the excitability of persistent luminescence by visible light in this material, a Q-band ENDOR investigation of (71/69)Ga and (53)Cr nuclei was performed in ZnGa2O4:Cr(3+) to get information on the interaction of Cr(3+) with valence and conduction bands. The positive electron spin density at Ga nuclei revealed a dominant interaction of the (4)A2 ground state of Cr(3+) with the valence band, and a weaker interaction with the conduction band. The latter may occur only in the excited (2)E and (4)T2 states of Cr(3+). It is proposed that when these two interactions are present, pairs of electrons and holes can be generated from excited Cr(3+) in distorted sites undergoing local electric field produced by neighboring defects with opposite charges.

  16. Effect of the d electrons on the electronic band structure of the valence bands of IIb-VIa C (2 × 2) reconstructed surfaces: GGA+U calculation

    NASA Astrophysics Data System (ADS)

    Rubio-Ponce, A.; Olguín, D.

    2017-06-01

    The structural and electronic properties of the ZnSe(001), ZnTe(001), CdSe(001), and CdTe(001) C (2 × 2) reconstructed surfaces have been studied using first principles calculations. To study the influence of the cation d states on the surface and resonance states of the valence bands, we have used the GGA+U approach. From a relaxation procedure of the reconstructed surface, we show that our model properly reproduces the electronic properties found in the bulk for these semiconductor compounds, as well as the known surface structural parameters.

  17. Mixed-valence effects and metamagnetism in a two-band model of correlated electrons

    NASA Astrophysics Data System (ADS)

    Acquarone, M.; SpaŁek, J.; Ray, D. K.

    1986-03-01

    We discuss both continuous and discontinuous transitions form para- to ferromagnetism within a model of electrons in double degenerate and hybridized band. We transform out rigorously the hybridization and obtain a two-band model with the component bands of substantially different width. This band structure is approximated by a band and a level placed in the center of the band. The model is solved both with and without applied magnetic field, within the Hartree-Fock approximation for the intraband and the interband interactions, and treating the Coulomb interactions on the level exactly. The self-consistent solutions for the magnetic moment and the band filling are given allowing for a redistribution of particles between the band and the level. A number of ferromagnetic and mixed-valent-type of configurations is possible, leading to a possibility of appearance of ferromagnetism in a discontinuous way and without the Stoner condition being fulfilled at the transition. Such transition cannot be described within the standard Ginzburg-Landau theory obtained from the Stoner-Wohlfarth model for a single band. The obtained result are used to give a qualitative explanation of the main results observed for the systems Co(S 1 - xSe x) 2 and CoTi 1 - xAl x.

  18. Ion-Electron-Conducting Polymer Composites: Promising Electromagnetic Interference Shielding Material.

    PubMed

    Vyas, Manoj Kumar; Chandra, Amita

    2016-07-20

    Polymer nanocomposites consisting of poly(vinylidenefluoride-co-hexafluoropropylene) PVdF-HFP, inorganic salt (LiBF4), organic salt (EMIMBF4), multiwalled carbon nanotubes (MWCNTs), and Fe3O4 nanoparticles were prepared as electromagnetic shield material. Improvement in conductivity and dielectric property due to the introduction of EMIMBF4, LiBF4, and MWCNTs was confirmed by complex impedance spectroscopy. The highest conductivity obtained is ∼1.86 mS/cm. This is attributed to the high ionic conductivity of the ionic liquids and the formation of a connecting network by the MWCNTs facilitating electron conduction. The total electromagnetic interference (EMI) shielding effectiveness has a major contribution to it due to absorption. Although the total shielding effectiveness in the Ku band (12.4-18 GHz) of pure ion-conducting system was found to be ∼19 dB and that for the polymer composites which are mixed (ion + electron) conductors is ∼46 dB, the contributions due to absorption are ∼16 and ∼42 dB, respectively.

  19. Electronic structure and optical properties of noncentrosymmetric LiGaSe2: Experimental measurements and DFT band structure calculations

    NASA Astrophysics Data System (ADS)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Ananchenko, L. N.; Isaenko, L. I.; Yelisseyev, A. P.; Khyzhun, O. Y.

    2017-04-01

    We report on measurements of X-ray photoelectron (XP) spectra for pristine and Ar+ ion-irradiated surfaces of LiGaSe2 single crystal grown by Bridgman-Stockbarger method. Electronic structure of the LiGaSe2 compound is studied from a theoretical and experimental viewpoint. In particular, total and partial densities of states of LiGaSe2 are investigated by density functional theory (DFT) calculations employing the augmented plane wave + local orbitals (APW + lo) method and they are verified by data of X-ray spectroscopy measurements. The DFT calculations indicate that the main contributors to the valence band of LiGaSe2 are the Se 4p states, which contribute mainly at the top and in the upper portion of the valence band, with also essential contributions of these states in the lower portion of the band. Other substantial contributions to the valence band of LiGaSe2 emerge from the Ga 4s and Ga 4p states contributing mainly at the lower ant upper portions of the valence band, respectively. With respect to the conduction band, the calculations indicate that its bottom is composed mainly from contributions of the unoccupied Ga s and Se p states. The present calculations are confirmed experimentally when comparing the XP valence-band spectrum of the LiGaS2 single crystal on a common energy scale with the X-ray emission bands representing the energy distribution of the Ga 4p and Se 4p states. Measurements of the fundamental absorption edges at room temperature reveal that bandgap value, Eg, of LiGaSe2 is equal to 3.47 eV and the Eg value increases up to 3.66 eV when decreasing temperature to 80 K. The main optical characteristics of the LiGaSe2 compound are clarified by the DFT calculations.

  20. Excitation of the Werner bands of H2 by electron impact

    NASA Technical Reports Server (NTRS)

    Stone, E. J.; Zipf, E. C.

    1972-01-01

    Absolute cross sections for the excitation of the H2 Werner band system were measured from energy threshold to 300 eV for electron impact on H2. The bands were observed in emission in the wavelength region 1100A to 1250A. The measured cross sections were compared with published transition probabilities, leading to the conclusion that the Werner bands are suitable as the basis for a relative spectral response calibration only when the bands are observed under sufficiently high resolution. The effect of the perturbation between the C 1Pi u and B 1 Sigma-u states of the hydrogen molecule was clearly observed in anomalies in the rotational intensity distribution in bands of the (3 v '') progression.

  1. Ag-graphene hybrid conductive ink for writing electronics.

    PubMed

    Xu, L Y; Yang, G Y; Jing, H Y; Wei, J; Han, Y D

    2014-02-07

    With the aim of preparing a method for the writing of electronics on paper by the use of common commercial rollerball pens loaded with conductive ink, hybrid conductive ink composed of Ag nanoparticles (15 wt%) and graphene-Ag composite nanosheets (0.15 wt%) formed by depositing Ag nanoparticles (∼10 nm) onto graphene sheets was prepared for the first time. Owing to the electrical pathway effect of graphene and the decreased contact resistance of graphene junctions by depositing Ag nanoparticles (NPs) onto graphene sheets, the concentration of Ag NPs was significantly reduced while maintaining high conductivity at a curing temperature of 100 ° C. A typical resistivity value measured was 1.9 × 10(-7) Ω m, which is 12 times the value for bulk silver. Even over thousands of bending cycles or rolling, the resistance values of writing tracks only increase slightly. The stability and flexibility of the writing circuits are good, demonstrating the promising future of this hybrid ink and direct writing method.

  2. Ag-graphene hybrid conductive ink for writing electronics

    NASA Astrophysics Data System (ADS)

    Xu, L. Y.; Yang, G. Y.; Jing, H. Y.; Wei, J.; Han, Y. D.

    2014-02-01

    With the aim of preparing a method for the writing of electronics on paper by the use of common commercial rollerball pens loaded with conductive ink, hybrid conductive ink composed of Ag nanoparticles (15 wt%) and graphene-Ag composite nanosheets (0.15 wt%) formed by depositing Ag nanoparticles (˜10 nm) onto graphene sheets was prepared for the first time. Owing to the electrical pathway effect of graphene and the decreased contact resistance of graphene junctions by depositing Ag nanoparticles (NPs) onto graphene sheets, the concentration of Ag NPs was significantly reduced while maintaining high conductivity at a curing temperature of 100 ° C. A typical resistivity value measured was 1.9 × 10-7 Ω m, which is 12 times the value for bulk silver. Even over thousands of bending cycles or rolling, the resistance values of writing tracks only increase slightly. The stability and flexibility of the writing circuits are good, demonstrating the promising future of this hybrid ink and direct writing method.

  3. Observation of interface band structure by ballistic-electron-emission microscopy

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.

    1988-01-01

    The paper reports an advanced ballistic electron spectroscopy technique that was used to directly measure semiconductor band structure properties at a subsurface interface. Two interface systems having contrasting band structures were investigated by this method: Au-Si and Au-GaAs. It is concluded that the proposed method, based on scanning tunneling microscopy, enables the spatially resolved carrier-transport spectroscopy of interfaces.

  4. Observation of interface band structure by ballistic-electron-emission microscopy

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.

    1988-01-01

    The paper reports an advanced ballistic electron spectroscopy technique that was used to directly measure semiconductor band structure properties at a subsurface interface. Two interface systems having contrasting band structures were investigated by this method: Au-Si and Au-GaAs. It is concluded that the proposed method, based on scanning tunneling microscopy, enables the spatially resolved carrier-transport spectroscopy of interfaces.

  5. Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

    PubMed Central

    Waterhouse, G. I. N.; Wahab, A. K.; Al-Oufi, M.; Jovic, V.; Anjum, D. H.; Sun-Waterhouse, D.; Llorca, J.; Idriss, H.

    2013-01-01

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability. PMID:24108361

  6. Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy

    PubMed Central

    Jobst, Johannes; van der Torren, Alexander J. H.; Krasovskii, Eugene E.; Balgley, Jesse; Dean, Cory R.; Tromp, Rudolf M.; van der Molen, Sense Jan

    2016-01-01

    High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the ‘chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of. PMID:27897180

  7. Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy

    NASA Astrophysics Data System (ADS)

    Jobst, Johannes; van der Torren, Alexander J. H.; Krasovskii, Eugene E.; Balgley, Jesse; Dean, Cory R.; Tromp, Rudolf M.; van der Molen, Sense Jan

    2016-11-01

    High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the `chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

  8. Electron beam fracturing of ZnO nanostructures and modification in optical band gap

    NASA Astrophysics Data System (ADS)

    Siraj, K.; Kanwal, M.; Saleem, S.; Pedarnig, J. D.; Rafique, M. S.; Naseem, S.

    2016-12-01

    In our previous work Siraj et al (J Alloys Comp 563:280, 2013), the electron beam irradiation at high energies (6-15 MeV) at constant dose of 30 Gy produced Zinc oxide elongated nanostructures and modified the optical band gap energies accordingly. In present work, those nanostructures are fractured to smaller sizes by increasing the electron doses to 100 and 200 Gy. The very high temperature gradient induced stresses are responsible for further fracturing of ZnO nanostructures. The optical properties such as refractive index, extinction coefficient and optical band gap energy have also modified when higher cumulative electron doses are used. The optical band gap energies are found to decrease by increasing electron doses at all used electron energies, which is attributed to the production of different defects like vacancies, unpaired bonds, nanovoids, nanocavities, nanocracks and high strains. The electron beam irradiation of ZnO thin films at used parameters (doses and energies) is found to be plausible technique to produce nanostructures of different sizes and accordingly modify the optical band gap energies. The results can be beneficial for optical and optoelectronic industries.

  9. The LDA+U calculation of electronic band structure of GaAs

    SciTech Connect

    Bahuguna, B. P. Sharma, R. O.; Saini, L. K.

    2016-05-06

    We present the electronic band structure of bulk gallium arsenide (GaAs) using first principle approach. A series of calculations has been performed by applying norm-conserving pseudopotentials and ultrasoft non-norm-conserving pseudopotentials within the density functional theory. These calculations yield too small band gap as compare to experiment. Thus, we use semiemperical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U), which is quite effective in order to describe the band gap of GaAs.

  10. Engineering the electronic structure and band gap of boron nitride nanoribbon via external electric field

    NASA Astrophysics Data System (ADS)

    Chegel, Raad

    2016-06-01

    By using the third nearest neighbor modified tight binding (3NN-TB) method, the electronic structure and band gap of BNNRs under transverse electric fields are explored. The band gap of the BNNRs has a decreasing with increasing the intensity of the applied electric field, independent on the ribbon edge types. Furthermore, an analytic model for the dependence of the band gap in armchair and zigzag BNNRs on the electric field is proposed. The reduction of E g is similar for some N a armchair and N z zigzag BNNRs independent of their edges.

  11. Band like Electronic Structures in Square Hollow Quantum Dots by 3D-MHFKS Calculation

    NASA Astrophysics Data System (ADS)

    Takizawa, Tokihiro; Okada, Hoshihito; Matsuse, Takehiro

    To find novel aspects of the electronic structures in quantum dots (QD) from a view point of spatial broken symmetry, 3-dimensional-mesh Hartree-Fock-Kohn-Sham (3D-MHFKS) calculations1 are applied to the interacting electron system of electron number N in a symmetry broken hollow QD. For the case of a square hollow quantum dot confined in square hard wall (HW) potential (SSHQD), the magnetic (B) field dependence of the obtained single particle energy levels and chemical potentials in B-N diagram are shown to have a band like electronic structures over the wide B-field range up to 20T. To clarify the origin of the band like electronic structures in SSHQD, 3D-MHFKS calculations are also applied for the mixed symmetry QD's with a circular hollow in square HW potential (SCHQD) and with a square hollow in circular HW potential (CSHQD).

  12. Reconstruction of band structure induced by electronic nematicity in an FeSe superconductor.

    PubMed

    Nakayama, K; Miyata, Y; Phan, G N; Sato, T; Tanabe, Y; Urata, T; Tanigaki, K; Takahashi, T

    2014-12-05

    We have performed high-resolution angle-resolved photoemission spectroscopy on an FeSe superconductor (T_{c}∼8  K), which exhibits a tetragonal-to-orthorhombic structural transition at T_{s}∼90  K. At low temperature, we found splitting of the energy bands as large as 50 meV at the M point in the Brillouin zone, likely caused by the formation of electronically driven nematic states. This band splitting persists up to T∼110  K, slightly above T_{s}, suggesting that the structural transition is triggered by the electronic nematicity. We have also revealed that at low temperature the band splitting gives rise to a van Hove singularity within 5 meV of the Fermi energy. The present result strongly suggests that this unusual electronic state is responsible for the unconventional superconductivity in FeSe.

  13. Coexisting Honeycomb and Kagome Characteristics in the Electronic Band Structure of Molecular Graphene.

    PubMed

    Paavilainen, Sami; Ropo, Matti; Nieminen, Jouko; Akola, Jaakko; Räsänen, Esa

    2016-06-08

    We uncover the electronic structure of molecular graphene produced by adsorbed CO molecules on a copper (111) surface by means of first-principles calculations. Our results show that the band structure is fundamentally different from that of conventional graphene, and the unique features of the electronic states arise from coexisting honeycomb and Kagome symmetries. Furthermore, the Dirac cone does not appear at the K-point but at the Γ-point in the reciprocal space and is accompanied by a third, almost flat band. Calculations of the surface structure with Kekulé distortion show a gap opening at the Dirac point in agreement with experiments. Simple tight-binding models are used to support the first-principles results and to explain the physical characteristics behind the electronic band structures.

  14. Strong effect of electron-phonon interaction on the lattice thermal conductivity in 3C-SiC

    NASA Astrophysics Data System (ADS)

    Wang, Tianshi; Gui, Zhigang; Janotti, Anderson; Ni, Chaoying; Karandikar, Prashant

    2017-08-01

    3C-SiC is a promising semiconductor for many applications where doping and heat dissipation are fundamental parameters in the device design. However, the variation of thermal conductivity with carrier concentration remains to be explored. Using density functional theory, we computed the lattice thermal conductivity in intrinsic and doped 3C-SiC with charge carrier concentrations in the range of 1017 to 10 21cm-3 . From the calculated phonon dispersion, group velocities, and phonon-phonon scattering rates for undoped bulk 3C-SiC, we obtain a thermal conductivity of 491 W/m K at 300 K. In the case of doped 3C-SiC, we find that the lattice thermal conductivity is strongly reduced at high carrier concentrations. We also predict the effects of electron-phonon interaction (EPI) to be much stronger for hole- than electron-doped material, which is explained by the features of the electronic band structure near the band edges. In the limit of high carrier concentration of 10 21cm-3 , the thermal conductivity drops by 57% for hole and 32% for electron doping. Our results and analysis provide an in-depth understanding of phonon transport for the design of novel SiC-based electronics.

  15. Conductivities and curing properties of electron-beam-irradiated anisotropic conductive films

    NASA Astrophysics Data System (ADS)

    Shin, Tae Gyu; Lee, Inhyuk; Kim, Jae yong

    2012-07-01

    Radiation-curable acrylated epoxy oligomer was irradiated by using an electron beam (E-beam) with dosages of 5, 10, 20, 40, 80, 200, 400, and 550 kGy to investigate the electrical and the physical properties of anisotropic conductive films (ACFs) and to evaluate the potential application of radiation technology to flip-chip package processing. An ACF is an insulating epoxy matrix containing conducting particles that keep the electrical conductivity along the out-of-plane direction and the insulation property along the in-plane direction. The contact resistance between ACF joints cured by using an E-beam irradiation of 80 kGy was measured under a constant bonding pressure of 2 kgf/cm2 to demonstrate the effects of pad pitch size and the number of added conductive particles in the epoxy resin. Three types of PCBs, 1000-, 500-, and 100-µm pad pitches, were employed while the E-beam curable epoxy resin was mixed with conductive particles in a weight ratio of 10:1. The measured average contact resistance was 0.24 Ω with a minimum of 0.06 Ω for the samples prepared with a 100-µm pad pitch size, which is compatible with or lower than the values obtained from thermally-cured commercial ACFs. Our results demonstrate that an E-beam is an effective radiation method for curing epoxy resins at low temperatures in a short time and can be employed as a new technique for bonding circuits in high-density electric devices.

  16. Spectrophotometric method for optical band gap and electronic transitions determination of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Sangiorgi, Nicola; Aversa, Lucrezia; Tatti, Roberta; Verucchi, Roberto; Sanson, Alessandra

    2017-02-01

    The optical band gap energy and the electronic processes involved are important parameters of a semiconductor material and it is therefore important to determine their correct values. Among the possible methods, the spectrophotometric is one of the most common. Several methods can be applied to determine the optical band gap energy and still now a defined consensus on the most suitable one has not been established. A highly diffused and accurate optical method is based on Tauc relationship, however to apply this equation is necessary to know the nature of the electronic transitions involved commonly related to the coefficient n. For this purpose, a spectrophotometric technique was used and we developed a graphical method for electronic transitions and band gap energy determination for samples in powder form. In particular, the n coefficient of Tauc equation was determined thorough mathematical elaboration of experimental results on TiO2 (anatase), ZnO, and SnO2. The results were used to calculate the band gap energy values and then compared with the information obtained by Ultraviolet Photoelectron Spectroscopy (UPS). This approach provides a quick and accurate method for band gap determination through n coefficient calculation. Moreover, this simple but reliable method can be used to evaluate the nature of electronic transition that occurs in a semiconductor material in powder form.

  17. Observation of 'Band' Structures in Spacecraft Observations of Inner Magnetosphere Plasma Electrons

    NASA Astrophysics Data System (ADS)

    Mohan Narasimhan, Kirthika; Fazakerley, Andrew; Milhaljcic, Branislav; Grimald, Sandrine; Dandouras, Iannis; Owen, Chris

    2013-04-01

    In previous studies, several authors have reported inner magnetosphere observations of proton distributions confined to narrow energy bands in the range of 1-25 keV. These structures have been known as "nose structures", with reference to their appearance in energy-time spectrograms and are known as "bands" if they are observed for extended periods of time. These proton structures have been studied quite extensively with multiple mechanisms proposed for their formation, not all of which apply for electrons. We examine Double-Star TC1 PEACE electron data recorded in the inner magnetosphere (L<15) near the equatorial plane to see if these features are also observed in the electron energy spectra. These "bands" also appear in electron spectrograms, spanning an energy range of 0.2-30 keV, and are shown to occur predominantly towards the dayside and dusk sectors. We also see multiple bands in some instances. We investigate the properties of these multi-banded structures and carry out a statistical survey analysing them as a function of geomagnetic activity, looking at both the Kp and Auroral Indices, in an attempt to explain their presence.

  18. Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy

    SciTech Connect

    Junay, A.; Guézo, S. Turban, P.; Delhaye, G.; Lépine, B.; Tricot, S.; Ababou-Girard, S.; Solal, F.

    2015-08-28

    We study structural and electronic inhomogeneities in Metal—Organic Molecular monoLayer (OML)—semiconductor interfaces at the sub-nanometer scale by means of in situ Ballistic Electron Emission Microscopy (BEEM). BEEM imaging of Au/1-hexadecanethiols/GaAs(001) heterostructures reveals the evolution of pinholes density as a function of the thickness of the metallic top-contact. Using BEEM in spectroscopic mode in non-short-circuited areas, local electronic fingerprints (barrier height values and corresponding spectral weights) reveal a low-energy tunneling regime through the insulating organic monolayer. At higher energies, BEEM evidences new conduction channels, associated with hot-electron injection in the empty molecular orbitals of the OML. Corresponding band diagrams at buried interfaces can be thus locally described. The energy position of GaAs conduction band minimum in the heterostructure is observed to evolve as a function of the thickness of the deposited metal, and coherently with size-dependent electrostatic effects under the molecular patches. Such BEEM analysis provides a quantitative diagnosis on metallic top-contact formation on organic molecular monolayer and appears as a relevant characterization for its optimization.

  19. Sequential Measurement of Displacement and Conduction Currents in Electronic Devices

    NASA Astrophysics Data System (ADS)

    Albareda, Guillermo; Traversa, Fabio Lorenzo; Benali, Abdelilah

    2016-07-01

    The extension of the Ramo-Schockley-Pellegrini theorem for quantum systems allows to define a positive-operator valued measure (POVM) for the total conduction plus displacement electrical current. The resulting current operator is characterized by two parameters, viz. the width of the associated Gaussian functions and the lapse of time between consecutive measurements. For large Gaussian dispersions and small time intervals, the operator obeys to a continuous weak-measurement scheme. Contrarily, in the limit of very narrow Gaussian widths and a single-shot measurement, the operator corresponds to a standard von Neumann (projective) measurement. We have implemented the resulting measurement protocol into a quantum electron transport simulator. Numerical results for a resonant tunneling diode show the great sensibility of current-voltage characteristics to different parameter configurations of the total current operator.

  20. Universal frequency-dependent conduction of electron glasses

    NASA Astrophysics Data System (ADS)

    Amir, Ariel

    2014-03-01

    Characterizing the frequency-dependent response of amorphous systems and glasses can provide important insights into their physics. Here, we study the response of an electronic glass, where Coulomb interactions are important and have previously been shown to significantly modify the conductance and lead to memory effects and aging. We propose a model which allows us to take the interactions into account in a self-consistent way, and explore the transport properties at all frequencies. Within the model, the response maps exactly to a (linear) network of resistors, self-capacitances and mutual capacitances. The response of this equivalent electric circuit is found numerically, and is shown to obey the universal scaling which is experimentally observed for a large class of amorphous solids.

  1. Topological Metal of NaBi with Ultralow Lattice Thermal Conductivity and Electron-phonon Superconductivity

    PubMed Central

    Li, Ronghan; Cheng, Xiyue; Xie, Qing; Sun, Yan; Li, Dianzhong; Li, Yiyi; Chen, Xing-Qiu

    2015-01-01

    By means of first-principles and ab initio tight-binding calculations, we found that the compound of NaBi is a three-dimensional non-trivial topological metal. Its topological feature can be confirmed by the presence of band inversion, the derived effective Z2 invariant and the non-trivial surface states with the presence of Dirac cones. Interestingly, our calculations further demonstrated that NaBi exhibits the uniquely combined properties between the electron-phonon coupling superconductivity in nice agreement with recent experimental measurements and the obviously anisotropic but extremely low thermal conductivity. The spin-orbit coupling effects greatly affect those properties. NaBi may provide a rich platform to study the relationship among metal, topology, superconductivity and thermal conductivity. PMID:25676863

  2. Suppression of Electron Thermal Conduction in the Intracluster Medium

    NASA Astrophysics Data System (ADS)

    Roberg-Clark, Gareth; Drake, James; Swisdak, M.; Reynolds, Christopher S.

    2017-08-01

    The Intracluster Medium (ICM) contains high-temperature dilute plasma in which the quantity beta, defined as the ratio of the thermal pressure of the gas to the local magnetic field pressure, is much larger than unity. In addition, the collisional mean free path of particles in the ICM is typically large compared to the magnetic gyro-radius of individual particles. These conditions allow for the growth of robust microinstabilities that can significantly alter the transport of particles and heat along the local magnetic field line. Here we explore such an instability using driven two-dimensional Particle-In-Cell simulations of a magnetized plasma with a temperature gradient imposed at the boundaries. The system is highly unstable and develops large-amplitude magnetic fluctuations that effectively scatter the orbits of electrons crossing the simulation domain, resulting in a collisionless suppression of thermal conduction across the temperature gradient and magnetic field. The results suggest that the spontaneous development of small-scale plasma turbulence in the ICM may play a pivotal role in determining the thermal conductivity of ICM-like plasmas.

  3. Electronic band structure effects in the stopping of protons in copper

    NASA Astrophysics Data System (ADS)

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-01

    We present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v =0.02 -10 a .u . where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results are in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ˜1.5 ) in the velocity range v =0.07 -0.3 a .u . , which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v →0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.

  4. Dispersion of electronic bands in intermetallic compound LiBe and related properties

    NASA Astrophysics Data System (ADS)

    Reshak, A. H.

    2015-10-01

    Based on the all-electron full-potential linearized augmented plane wave within density functional theory calculations dispersion of the electronic band structure, total and the angular momentum resolved projected density of states, the shape of Fermi surface, the electronic charge density distribution and the optical response of the intermetallic LiBe compound are performed. Seeking the influence of the different exchange correlations on the ground state properties of the intermetallic LiBe, calculations are performed within four types of exchange correlations, namely the local density approximation, general gradient approximation, Engel-Vosko generalized gradient approximation and the modified Becke-Johnson potential. It has been found that replacing the exchange correlations exhibit insignificant influence on the bands dispersion, density of states and hence the optical properties. The obtained results suggest that there exists a strong hybridization between the states resulting in covalent bonds. The Fermi surface is formed by two bands and the center of the Fermi surface is formed by holes. The electronic charge density distribution confirms that the charge is attracted toward Be atoms and the calculated bond lengths are in good accordance with the available experimental data. To get deep insight into the electronic structure, the optical properties are investigated and analyzed in accordance with the calculated band structure and the density of states.

  5. Vanishing Electronic Energy Loss of Very Slow Light Ions in Insulators with Large Band Gaps

    SciTech Connect

    Markin, S. N.; Primetzhofer, D.; Bauer, P.

    2009-09-11

    Electronic energy loss of light ions in nanometer films of materials with large band gaps has been studied for very low velocities. For LiF, a threshold velocity is observed at 0.1 a.u. (250 eV/u), below which the ions move without transferring energy to the electronic system. For KCl, a lower (extrapolated) threshold velocity is found, identical for H and He ions. For SiO{sub 2}, no clear velocity threshold is observed for He particles. For protons and deuterons, electronic stopping is found to perfectly fulfill velocity scaling, as expected for binary ion-electron interaction.

  6. Quasiparticle self-consistent G W electronic band structure of Cd-IV-N2 compounds

    NASA Astrophysics Data System (ADS)

    Lyu, Sai; Lambrecht, Walter R. L.

    2017-07-01

    Quasiparticle self-consistent G W calculations of the electronic band structures of Cd-IV-N2 with group-IV elements, Si, Ge, and Sn, are reported. The lattice parameters in the P n a 21 crystal structure are obtained both in the local density approximation and generalized gradient approximation (GGA) and provide respectively an underestimate and overestimate of the lattice constants for these until now not synthesized materials. The Wyckoff positions are obtained by structural minimization. At the GGA lattice constant, which is expected to be the most reliable, CdSiN2 is found to have an indirect gap (U -Γ ) of 2.72 eV, which is 0.55 eV lower than the direct gap at Γ of 3.27 eV. In CdGeN2, the indirect gap of 2.01 eV is only 0.1 eV smaller than the direct gap of 2.11 eV, and in CdSnN2 the gap is direct and equals 0.64 eV close to that of InN, as expected. The direct/indirect nature of CdGeN2 is found to be sensitive to shear strain. The conduction band effective masses decrease from CdSiN2 to CdGeN2 to CdSnSn2. The energies of formation indicate these materials to be stable with the possible exception of CdSnN2.

  7. Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics

    SciTech Connect

    Brandt, Riley E. E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio E-mail: buonassisi@mit.edu; Young, Matthew; Dameron, Arrelaine; Teeter, Glenn; Park, Helen Hejin; Chua, Danny; Gordon, Roy G.

    2014-12-29

    The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

  8. Valence electronic structure of semiconductor quantum dot and wide band gap oxide interfaces by ultraviolet photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Timp, Brooke Andrea

    Energy level alignment is an important factor in efficient charge transfer at an interface between two semiconductors. This topic is explored in model systems that are relevant to quantum dot-sensitized solar cells, inorganic semiconductor nanoparticles adsorbed on single crystal wide band gap oxide substrates, using ultraviolet photoelectron spectroscopy. Cadmium selenide quantum dots are assembled on a ZnO (10 1¯ 0) surface using 3-mercaptopropionic acid linkers. The valence band maximum of the CdSe quantum dots is found to be located at 1.1 +/- 0.1 eV above the valence band maximum of ZnO, nearly independent of the size of the quantum dots (2.1-4.2 nm). This finding suggests that, upon adsorption, there is strong electronic interaction between CdSe quantum dots and the ZnO surface. As a result, varying the quantum dot size mainly tunes the alignment of the conduction band minimum of CdSe with respect to that of the ZnO surface. Sub-monolayer films of PbSe quantum dots are prepared on single crystal substrates, ZnO (10 1 0 ) and TiO2 (110), and exposed to ligand solutions, either hydrazine or 1,2-ethanedithiol (EDT) in acetonitrile. Interfacial energy alignment is measured as a function of quantum dot size, substrate and ligand treatment. The affect of the ligand treatments on the energy alignment is substrate-dependent. The valence band maximum of the dots is size-independent on ZnO due to strong electronic interactions with the substrate; in particular, EDT-treated films show significant enhancement of quantum dot valence band intensity due to electronic coupling with the ZnO surface. In contrast, the quantum dot valence band maximum is size-dependent and shows a smaller shift between ligand treatments for films on TiO2, suggesting weaker quantum dot-substrate interactions. In most cases the measured alignment predicts that electron injection from a photoexcited PbSe quantum dot to either ZnO or TiO2 will necessitate the involvement of higher-lying levels

  9. Electron elevator: Excitations across the band gap via a dynamical gap state

    SciTech Connect

    Lim, Anthony; Foulkes, W. M. C.; Horsfield, A. P.; Mason, D. R.; Schleife, A.; Draeger, E. W.; Correa, A. A.

    2016-01-27

    We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. Lastly, an analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.

  10. Electron elevator: Excitations across the band gap via a dynamical gap state

    DOE PAGES

    Lim, Anthony; Foulkes, W. M. C.; Horsfield, A. P.; ...

    2016-01-27

    We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. Lastly, an analysis of the time dependence of the transition rates using coupled linear rate equations enables one of themore » excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.« less

  11. Effects of electron band structure on neutrino pair bremsstrahlung in neutron star crusts

    SciTech Connect

    Pethick, C.J. |

    1997-12-01

    We calculate the rate of energy emission by bremsstrahlung of neutrino pairs by electrons moving in the crystalline lattice of ions in dense matter in the crust of a neutron star. Since the periodic potential in the solid gives rise to electronic band gaps which can be as large as about 1 MeV, it is necessary in estimating the bremsstrahlung rate at low temperatures to take into account band structure in detail. We find that, in the densest parts of the inner crust of a neutron star, neutrino emission at temperatures of about 2{times}10{sup 9}K or less is much suppressed compared with earlier estimates that treated the electron-lattice interaction perturbatively, and conclude that neutrino pair bremsstrahlung by electrons in the crusts of neutron stars is much less important for neutron star thermal evolution than was previously thought. {copyright} {ital 1997} {ital The American Physical Society}

  12. Electronic band structure, doping, and defects in the semiconducting Half Heusler compound CoTiSb

    NASA Astrophysics Data System (ADS)

    Kawasaki, Jason; Johansson, Linda; Hjort, Martin; Timm, Rainer; Schultz, Brian; Balasubramanian, Thiagarajan; Mikkelsen, Anders; Palmstrom, Chris

    2013-03-01

    We report transport and electronic band structure measurements on epitaxial films of the Half Heusler compound CoTiSb. CoTiSb belongs to the family of Half Heuslers with 18 valence electrons per formula unit that are predicted to be semiconducting despite being composed of all metallic components. Here the CoTiSb films were grown by molecular beam epitaxy on a lattice matched InAlAs buffer. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and X-ray diffraction. Scanning tunnelling spectroscopy and temperature-dependent transport measurements reveal that the films are semiconducting, with unintentionally doped carrier concentrations comparable to that of highly doped conventional compound semiconductors. These carrier concentrations can be modulated by doping with Sn. The band structure of the films was measured by angle resolved photoemission spectroscopy at the MAX-Lab Synchrotron facility. The bulk bands are in general agreement with density functional theory calculations, with a valence band maximum at Γ and surface states within the bulk band gap. The effects of defects are explored in order to explain the ARPES results. This work was supported by the ARO, AFOSR, ONR, and NSF.

  13. A free-electron model for the Dirac bands in graphene

    NASA Astrophysics Data System (ADS)

    Kissinger, G. S.; Satpathy, S.

    2016-11-01

    We present a new method for describing the electronic structure of graphene, by treating the honeycomb lattice as an arrangement of crisscrossing one-dimensional quantum wires. The electrons travel as free particles along the wires and interfere at the three-way junctions formed by the carbon atoms. The approach produces the linearly dispersive Dirac band structure as well as the chiral pseudo-spin-wave functions. When vacancies are incorporated, the model reproduces the well known zero mode states.

  14. Substitutional Electron and Hole Doping of WSe2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling

    NASA Astrophysics Data System (ADS)

    Mukherjee, R.; Chuang, H. J.; Koehler, M. R.; Combs, N.; Patchen, A.; Zhou, Z. X.; Mandrus, D.

    2017-03-01

    Transition-metal dichalcogenides (TMDs) such as MoS2 , MoSe2 , and WSe2 have emerged as promising two-dimensional semiconductors. Many anticipated applications of these materials require both p -type and n -type TMDs with long-term doping stability. Here, we report on the synthesis of substitutionally doped WSe2 crystals using Nb and Re as p - and n -type dopants, respectively. Hall coefficient and gate-dependent transport measurements reveal drastically different doping properties between nominally 0.5% Nb- and 0.5% Re-doped WSe2 . While 0.5% Nb-doped WSe2 (WSe2∶Nb ) is degenerately hole doped with a nearly temperature-independent carrier density of approximately 1019 cm-3 , electrons in 0.5% Re-doped WSe2 (WSe2 ∶Re ) are largely trapped in localized states below the mobility edge and exhibit thermally activated behavior. Charge transport in both WSe2∶Nb and WSe2 ∶Re is found to be limited by Coulomb scattering from ionized impurities. Furthermore, we fabricate vertical van der Waals-junction diodes consisting of multilayers of WSe2∶Nb and WSe2 ∶Re . Finally, we demonstrate reverse rectifying behavior as a direct proof of band-to-band tunneling in our WSe2∶Nb /WSe2∶Re diodes.

  15. Thermal Conductivity of the Iron-Based Superconductor FeSe: Nodeless Gap with a Strong Two-Band Character.

    PubMed

    Bourgeois-Hope, P; Chi, S; Bonn, D A; Liang, R; Hardy, W N; Wolf, T; Meingast, C; Doiron-Leyraud, N; Taillefer, Louis

    2016-08-26

    The thermal conductivity κ of the iron-based superconductor FeSe was measured at temperatures down to 75 mK in magnetic fields up to 17 T. In a zero magnetic field, the electronic residual linear term in the T=0  K limit, κ_{0}/T, is vanishingly small. The application of a magnetic field B causes an exponential increase in κ_{0}/T initially. Those two observations show that there are no zero-energy quasiparticles that carry heat and therefore no nodes in the superconducting gap of FeSe. The full field dependence of κ_{0}/T has the classic two-step shape of a two-band superconductor: a first rise at very low field, with a characteristic field B^{⋆}≪B_{c2}, and then a second rise up to the upper critical field B_{c2}. This shows that the superconducting gap is very small (but finite) on one of the pockets in the Fermi surface of FeSe. We estimate that the minimum value of the gap, Δ_{min}, is an order of magnitude smaller than the maximum value, Δ_{max}.

  16. Conduction band offset engineering in wide-bandgap Ag(In,Ga)Se2 solar cells by hybrid buffer layer

    NASA Astrophysics Data System (ADS)

    Umehara, Takeshi; Zulkifly, Faris Akira Bin Mohd; Nakada, Kazuyoshi; Yamada, Akira

    2017-08-01

    Ag(In,Ga)Se2 (AIGS) is one of the promising candidates for the top cell absorber in the tandem structure. However, the conversion efficiency of AIGS solar cells is still lower than that required for the top cell. In this study, to improve the conversion efficiency of AIGS solar cells, we controlled the conduction band offset (CBO) at the buffer layer/ZnO and buffer layer/AIGS interfaces. The reduction in interface recombination at the CdS buffer layer/AIGS interface was achieved by introducing a ZnS(O,OH) buffer layer instead of a CdS buffer layer, although the fill factor (FF) decreased markedly because the CBO at the ZnS(O,OH)/ZnO interface prevented the electron flow under a forward bias. We found that the introduction of a CdS/ZnS(O,OH) hybrid buffer layer is efficient in controlling the CBO at both the buffer layer/AIGS and buffer layer/ZnO interfaces and improving the solar cell conversion efficiency.

  17. Band gap bowing and electron localization of (GaxIn1-x)N

    SciTech Connect

    Lee, Byounghak; Wang, Lin-Wang

    2006-05-09

    The band gap bowing and the electron localization ofGaxIn1-xN are calculated using both the local density approximation (LDA)and screened-exchange local density functional (sX-LDA) methods. Thecalculated sX-LDA band gaps are in good agreement with the experimentallyobserved values, with errors of -0.26 and 0.09 eV for bulk GaN and InN,respectively. The LDA band gap errors are 1.33 and 0.81 eV for GaN andInN, in order. In contrast to the gap itself, the band gap bowingparameter is found to be very similar in sX-LDA and LDA. We identify thelocalization of hole states in GaxIn1-xN alloys along In-N-In chains. Thepredicted localizationis stronger in sX-LDA.

  18. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    SciTech Connect

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; Adamska, Lyudmyla; Yamada, Takatoshi; Dattelbaum, Andrew M.; Gupta, Gautam; Doorn, Stephen K.; Velizhanin, Kirill A.; Teraoka, Yuden; Chen, Mingwei; Htoon, Han; Chhowalla, Manish; Mohite, Aditya D.; Takakuwa, Yuji

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

  19. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    DOE PAGES

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; ...

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

  20. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    SciTech Connect

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; Adamska, Lyudmyla; Yamada, Takatoshi; Dattelbaum, Andrew M.; Gupta, Gautam; Doorn, Stephen K.; Velizhanin, Kirill A.; Teraoka, Yuden; Chen, Mingwei; Htoon, Han; Chhowalla, Manish; Mohite, Aditya D.; Takakuwa, Yuji

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

  1. Electron concentrations calculated from the lower hybrid resonance noise band observed by Ogo 3.

    NASA Technical Reports Server (NTRS)

    Burtis, W. J.

    1973-01-01

    A noise band at the lower hybrid resonance (LHR) is often detected by the VLF and ELF receivers on Ogo 3, using the electric antenna. In some cases the noise band is at the geometric mean gyrofrequency as measured by the Goddard Space Flight Center (GSFC) magnetometer, and local LHR in a dense H(+) plasma is indicated; in such cases, electron concentration can be calculated, if it is assumed that heavy ions are negligible. Observations at midlatitudes and altitudes of a few earth radii show local concentrations as low as 1.4 electrons/cu cm. In one case the concentrations obtained from the LHR noise band agree with those measured simultaneously by the GSFC ion mass spectrometer within a factor of 2. In another case the concentration is observed to fall by a factor of 2 in 150 km and then to decrease roughly as R to the minus fourth power, in agreement with whistler measurements outside the plasmapause.

  2. Tuning the electronic band-gap of fluorinated 3C-silicon carbide nanowires

    NASA Astrophysics Data System (ADS)

    Miranda Durán, Álvaro; Trejo Baños, Alejandro; Pérez, Luis Antonio; Cruz Irisson, Miguel

    The possibility of control and modulation of the electronic properties of silicon carbide nanowires (SiCNWs) by varying the wire diameter is well known. SiCNWs are particularly interesting and technologically important, due to its electrical and mechanical properties, allowing the development of materials with specific electronic features for the design of stable and robust electronic devices. Tuning the band gap by chemical surface passivation constitutes a way for the modification of the electronic band gap of these nanowires. We present, the structural and electronic properties of fluorinated SiCNWs, grown along the [111] crystallographic direction, which are investigated by first principles. We consider nanowires with six diameters, varying from 0.35 nm to 2.13 nm, and eight random covering schemes including fully hydrogen- and fluorine terminated ones. Gibbs free energy of formation and electronic properties were calculated for the different surface functionalization schemes and diameters considered. The results indicate that the stability and band gap of SiCNWs can be tuned by surface passivation with fluorine atoms This work was supported by CONACYT infrastructure project 252749 and UNAM-DGAPA-PAPIIT IN106714. A.M. would like to thank for financial support from CONACyT-Retención. Computing resources from proyect SC15-1-IR-27 of DGTIC-UNAM are acknowledged.

  3. Electronic band structures and excitonic properties of delafossites: A GW-BSE study

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoming; Meng, Weiwei; Yan, Yanfa

    2017-08-01

    We report the band structures and excitonic properties of delafossites CuMO2 (M=Al, Ga, In, Sc, Y, Cr) calculated using the state-of-the-art GW-BSE approach. We evaluate different levels of self-consistency of the GW approximations, namely G0W0, GW0, GW, and QSGW, on the band structures and find that GW0, in general, predicts the band gaps in better agreement with experiments considering the electron-hole effect. For CuCrO2, the HSE wave function is used as the starting point for the perturbative GW0 calculations, since it corrects the band orders wrongly predicted by PBE. The discrepancy about the valence band characters of CuCrO2 is classified based on both HSE and QSGW calculations. The PBE wave functions, already good, are used for other delafossites. All the delafossites are shown to be indirect band gap semiconductors with large exciton binding energies, varying from 0.24 to 0.44 eV, in consistent with experimental findings. The excitation mechanisms are explained by examining the exciton amplitude projections on the band structures. Discrepancies compared with experiments are also addressed. The lowest and strongest exciton, mainly contributed from either Cu 3d → Cu 3p (Al, Ga, In) or Cu 3d → M 3d (M = Sc, Y, Cr) transitions, is always located at the L point of the rhombohedral Brillouin zone.

  4. Electronic band structure trends of perovskite halides: Beyond Pb and Sn to Ge and Si

    NASA Astrophysics Data System (ADS)

    Huang, Ling-yi; Lambrecht, Walter R. L.

    2016-05-01

    The trends in electronic band structure are studied in the cubic A B X3 halide perovskites for A =Cs ; B =Pb , Sn, Ge, Si; and X =I , Br, Cl. The gaps are found to decrease from Pb to Sn and from Ge to Si, but increase from Sn to Ge. The trend is explained in terms of the atom s levels of the group-IV element and the atomic sizes which changes the amount of hybridization with X -p and hence the valence bandwidth. Along the same series spin-orbit coupling also decreases and this tends to increase the gap because of the smaller splitting of the conduction band minimum. Both effects compensate each other to a certain degree. The trend with halogens is to reduce the gap from Cl to I, i.e., with decreasing electronegativity. The role of the tolerance factor in avoiding octahedron rotations and octahedron edge sharing is discussed. The Ge containing compounds have tolerance factor t >1 and hence do not show the series of octahedral rotation distortions and the existence of edge-sharing octahedral phases known for Pb and Sn-based compounds, but rather a rhombohedral distortion. CsGeI3 is found to have a suitable gap for photovoltaics both in its cubic (high-temperature) and rhombohedral (low-temperature) phases. The structural stability of the materials in the different phases is also discussed. We find the rhombohedral phase to have lower total energy and slightly larger gaps but to present a less significant distortion of the band structure than the edge-sharing octahedral phases, such as the yellow phase in CsSnI3. The corresponding silicon based compounds have not yet been synthesized and therefore our estimates are less certain but indicate a small gap for cubic CsSiI3 and CsSiBr3 of about 0.2 ±0.2 eV and 0.8 ±0.6 eV for CsSiCl3. The intrinsic stability of the Si compounds is discussed.

  5. Polarization-based perturbations to thermopower and electronic conductivity in highly conductive tungsten bronze structured (Sr,Ba)Nb2O6: Relaxors vs normal ferroelectrics

    NASA Astrophysics Data System (ADS)

    Bock, Jonathan A.; Trolier-McKinstry, Susan; Mahan, Gerald D.; Randall, Clive A.

    2014-09-01

    Electrical conductivity, thermopower, and lattice strain were investigated in the tetragonal tungsten bronze structured (Srx,Ba1-x)Nb2O6-δ system for 0.7>x>0.4 with large values of δ. These materials show attractive thermoelectric characteristics, especially in single-crystal form. Here, the Sr/Ba ratio was changed in order to vary the material between a normal ferroelectric with long-range polarization to relaxor behavior with short-range order and dynamic polarization. The influence of this on the electrical conduction mechanisms was then investigated. The temperature dependence of both the thermopower and differential activation energy for conduction suggests that the electronic conduction is controlled by an impurity band with a mobility edge separating localized and delocalized states. Conduction is controlled via hopping at low temperatures, and as temperature rises electrons are activated above the mobility edge, resulting in a large increase in electrical conductivity. For relaxor ferroelectric-based compositions, when dynamic short-range order polarization is present in the system, trends in the differential activation energy and thermopower show deviations from this conduction mechanism. The results are consistent with the polarization acting as a source of disorder that affects the location of the mobility edge and, therefore, the activation energy for conduction.

  6. Critical increase in Na-doping facilitates acceptor band movements that yields ~180 meV shallow hole conduction in ZnO bulk crystals

    PubMed Central

    Parmar, Narendra S.; Yim, Haena; Choi, Ji-Won

    2017-01-01

    Stable p-type conduction in ZnO has been a long time obstacle in utilizing its full potential such as in opto-electronic devices. We designed a unique experimental set-up in the laboratory for high Na-doping by thermal diffusion in the bulk ZnO single crystals. SIMS measurement shows that Na concentration increases by 3 orders of magnitude, to ~3 × 1020 cm−3 as doping temperature increases to 1200 °C. Electronic infrared absorption was measured for Na-acceptors. Absorption bands were observed near (0.20–0.24) eV. Absorption bands blue shifted by 0.04 eV when doped at 1200 °C giving rise to shallow acceptor level. NaZn band movements as a function of doping temperature are also seen in Photoluminescence emission (PL), Photoluminescence excitation (PLE) and UV-Vis transmission measurements. Variable temperature Hall measurements show stable p-type conduction with hole binding energy ~0.18 eV in ZnO samples that were Na-doped at 1200 °C. PMID:28272444

  7. Critical increase in Na-doping facilitates acceptor band movements that yields ~180 meV shallow hole conduction in ZnO bulk crystals

    NASA Astrophysics Data System (ADS)

    Parmar, Narendra S.; Yim, Haena; Choi, Ji-Won

    2017-03-01

    Stable p-type conduction in ZnO has been a long time obstacle in utilizing its full potential such as in opto-electronic devices. We designed a unique experimental set-up in the laboratory for high Na-doping by thermal diffusion in the bulk ZnO single crystals. SIMS measurement shows that Na concentration increases by 3 orders of magnitude, to ~3 × 1020 cm‑3 as doping temperature increases to 1200 °C. Electronic infrared absorption was measured for Na-acceptors. Absorption bands were observed near (0.20–0.24) eV. Absorption bands blue shifted by 0.04 eV when doped at 1200 °C giving rise to shallow acceptor level. NaZn band movements as a function of doping temperature are also seen in Photoluminescence emission (PL), Photoluminescence excitation (PLE) and UV-Vis transmission measurements. Variable temperature Hall measurements show stable p-type conduction with hole binding energy ~0.18 eV in ZnO samples that were Na-doped at 1200 °C.

  8. Thermodynamic consequence of the new attribution of bands in the electronic absorption spectrum of electron donor-iodine-solvent systems

    NASA Astrophysics Data System (ADS)

    Abramov, Sergey P.

    1999-06-01

    The subject review pays attention to the peculiarities in behaviour of bands in the electronic absorption spectra of electron donor-iodine-solvent systems, the appearance of which is associated with the intermolecular interaction of molecular iodine with electron donor organic molecules. The new concept of the bands’ attribution to the isomeric equilibrium molecular charge-transfer complexes (CTCs) of CTC-I and CTC-II types is considered. The features of possible phase transitions in the solid state are discussed on the basis of the thermodynamic properties and electronic structures of the CTC-I and CTC-II in electron donor-iodine-solvent systems. The stabilisation of the CTC-II structure with the temperature lowering coincided in many cases with the electrons’ localisation in the solid state structures having charge-transfer bonds.

  9. Minority-spin band parameters in a NiMnSb thin film determined by spectral conductivity

    SciTech Connect

    Grigorescu, C.E.A.; Trodahl, H.J.; Strickland, N.M.; Bittar, A.; Manea, S.A.; Giapintzakis, J.; Monnereau, O.; Notonier, R.; Kennedy, V.J.

    2004-12-01

    NiMnSb is expected to be a ferromagnetic half metal, an expectation that is based in part on band structure calculations. Here we report optical conductivity studies of the band structure for a film prepared by pulsed laser deposition onto a Si substrate held at a relatively low temperature as is required for some device applications--films which are susceptible to site disorder associated with the vacant site in this half-Heusler compound. We demonstrate that the direct interband transitions are essentially unshifted in comparison with bulk material, though they are somewhat broadened. Below the direct-transition absorption edge we report the presence of indirect spin-reversing transitions between the Fermi energy (E{sub f}) and the extrema of the minority-spin valence and conduction bands, providing a measure of the band edge energies. Both of these edges appear closer to E{sub f} than is seen in well-ordered bulk NiMnSb, with the conduction-band minimum showing weight at only 200 cm{sup -1} above E{sub f}, close enough to have substantial occupation at ambient temperature.

  10. Formation of Hubbard-like bands as a fingerprint of strong electron-electron interactions in FeSe

    NASA Astrophysics Data System (ADS)

    Watson, Matthew D.; Backes, Steffen; Haghighirad, Amir A.; Hoesch, Moritz; Kim, Timur K.; Coldea, Amalia I.; Valentí, Roser

    2017-02-01

    We use angle-resolved photoemission spectroscopy (ARPES) to explore the electronic structure of single crystals of FeSe over a wide range of binding energies and study the effects of strong electron-electron correlations. We provide evidence for the existence of "Hubbard-like bands" at high binding energies consisting of incoherent many-body excitations originating from Fe 3 d states in addition to the renormalized quasiparticle bands near the Fermi level. Many high-energy features of the observed ARPES data can be accounted for when incorporating the effects of strong local Coulomb interactions in calculations of the spectral function via dynamical mean-field theory, including the formation of a Hubbard-like band. This shows that over the energy scale of several eV, local correlations arising from the on-site Coulomb repulsion and Hund's coupling are essential for a proper understanding of the electronic structure of FeSe and other related iron-based superconductors.

  11. Conductivity Modifications of Graphene by Electron Donative Organic Molecules

    NASA Astrophysics Data System (ADS)

    Masujima, Hiroaki; Mori, Takehiko; Hayamizu, Yuhei

    2017-03-01

    Graphene has been studied for the application of transparent electrodes in flexible electrical devices with semiconductor organics. Control of the charge carrier density in graphene is crucial to reduce the contact resistance between graphene and the active layer of organic semiconductor. Chemical doping of graphene is an approach to change the carrier density, where the adsorbed organic molecules donate or accept electrons form graphene. While various acceptor organic molecules have been demonstrated so far, investigation about donor molecules is still poor. In this work, we have investigated doping effect in graphene field-effect transistors functionalized by organic donor molecules such as dibenzotetrathiafulvalene (DBTTF), hexamethyltetrathiafulvalene (HMTTF), 1,5-diaminonaphthalene (DAN), and N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD). Based on conductivity measurements of graphene transistors, the former three molecules do not have any significant effect to graphene transistors. However, TMPD shows effective n-type doping. The doping effect has a correlation with the level of highest occupied molecular orbital (HOMO) of each molecule, where TMPD has the highest HOMO level.

  12. Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide.

    PubMed

    Ziaja, Beata; Medvedev, Nikita; Tkachenko, Victor; Maltezopoulos, Theophilos; Wurth, Wilfried

    2015-12-11

    Femtosecond X-ray irradiation of solids excites energetic photoelectrons that thermalize on a timescale of a few hundred femtoseconds. The thermalized electrons exchange energy with the lattice and heat it up. Experiments with X-ray free-electron lasers have unveiled so far the details of the electronic thermalization. In this work we show that the data on transient optical reflectivity measured in GaAs irradiated with femtosecond X-ray pulses can be used to follow electron-lattice relaxation up to a few tens of picoseconds. With a dedicated theoretical framework, we explain the so far unexplained reflectivity overshooting as a result of band-gap shrinking. We also obtain predictions for a timescale of electron-lattice thermalization, initiated by conduction band electrons in the temperature regime of a few eVs. The conduction and valence band carriers were then strongly non-isothermal. The presented scheme is of general applicability and can stimulate further studies of relaxation within X-ray excited narrow band-gap semiconductors.

  13. Effects of extrinsic and intrinsic perturbations on the electronic structure of graphene: Retaining an effective primitive cell band structure by band unfolding

    NASA Astrophysics Data System (ADS)

    Medeiros, Paulo V. C.; Stafström, Sven; Björk, Jonas

    2014-01-01

    We use a band unfolding technique to recover an effective primitive cell picture of the band structure of graphene under the influence of different types of perturbations. This involves intrinsic perturbations, such as structural defects, and external ones, comprising nitrogen substitutions and the inclusion of graphene in adsorbed systems. In such cases, the band unfolding provides a reliable and efficient tool for quantitatively analyzing the effect of doping and defects on the electronic structure of graphene. We envision that this approach will become a standard method in the computational analysis of graphene's electronic structure in related systems.

  14. Investigation of macro deformation bands in fatigued [001] Cu single crystals by electron channeling contrast technique

    SciTech Connect

    Gong, B.; Wang, Z.; Chen, D.; Wang, Z.

    1997-11-15

    In recent years, electron channeling contrast (ECC) technique accomplished in conventional scanning electron microscopes (SEM) has received much interest in studying dislocation configuration in deformed materials, especially in cyclically deformed materials. This technique can not only provide a real and wide view of dislocation substructures conveniently, but also make it possible to establish relationship between the surface structures, such as slip bands, and the bulk dislocation structures due to the unique feature of this technique. The present study is to use ECC technique to reveal the dislocation substructures of macro deformation bands formed in fatigued [001] Cu single crystals. The ECC results will also be correlated with those of light microscopy and transmission electron microscopy (TEM) studies.

  15. Understanding the electronic band structure of Pt-alloys for surface reactivity

    NASA Astrophysics Data System (ADS)

    Jung, Jongkeun; Kim, Beomyoung; Hong, Ji Sook; Jin, Tae Won; Shim, Ji Hoon; Nemsak, Slavomir; Denlinger, Jonathan D.; Masashi, Arita; Kenya, Shimada; Kim, Changyoung; Mun, Bongjin Simon

    In polymer exchange membrane fuel cell (PEMFC), the oxygen reduction reaction (ORR) at cathode side has been continuously investigated due to its critical importance in performance of fuel cell. So far, even with best industrial catalyst made with Pt, the performance of ORR is too far below from the commercial purpose. In 2007, Stamenkovic et al. showed that Pt alloys with 3- dtransition metal exhibited significantly improved ORR performance and pointed out the altered electronic structure of surface as the major contributing factor for enhanced ORR. Since 1990, with the advance of DFT calculation, the trend of surface chemical reactivity is explained with the analysis of d-band structures, known as d-band model. While d-band provides valid insight on surface chemical reactivity based on the valence band DOS, the relation between surface work function and DOS has not been well understood. The element-specific local electronic band structure of Pt alloys are identified by ARPES measurement, and the correlation between surface work function and local charge density is investigated.

  16. Doping and strain dependence of the electronic band structure in Ge and GeSn alloys

    NASA Astrophysics Data System (ADS)

    Xu, Chi; Gallagher, James; Senaratne, Charutha; Brown, Christopher; Fernando, Nalin; Zollner, Stefan; Kouvetakis, John; Menendez, Jose

    2015-03-01

    A systematic study of the effect of dopants and strain on the electronic structure of Ge and GeSn alloys is presented. Samples were grown by UHV-CVD on Ge-buffered Si using Ge3H8 and SnD4 as the sources of Ge and Sn, and B2H6/P(GeH3)3 as dopants. High-energy critical points in the joint-density of electronic states were studied using spectroscopic ellipsometry, which yields detailed information on the strain and doping dependence of the so-called E1, E1 +Δ1 , E0' and E2 transitions. The corresponding dependencies of the lowest direct band gap E0 and the fundamental indirect band gap Eindwere studied via room-T photoluminescence spectroscopy. Of particular interest for this work were the determination of deformation potentials, band gap renormalization effects, Burstein-Moss shifts due to the presence of carriers at band minima, and the dependence of other critical point parameters, such as amplitudes and phase angles, on the doping concentration. The selective blocking of transitions due to high doping makes it possible to investigate the precise k-space location of critical points. These studies are complemented with detailed band-structure calculations within a full-zone k-dot- p approach. Supported by AFOSR under DOD AFOSR FA9550-12-1-0208 and DOD AFOSR FA9550-13-1-0022.

  17. Band-gap measurements of direct and indirect semiconductors using monochromated electrons

    SciTech Connect

    Gu Lin; Srot, Vesna; Sigle, Wilfried; Koch, Christoph; Aken, Peter van; Ruehle, Manfred; Scholz, Ferdinand; Thapa, Sarad B.; Kirchner, Christoph; Jetter, Michael

    2007-05-15

    With the development of monochromators for transmission electron microscopes, valence electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the band structure of materials with high spatial resolution. However, artifacts such as Cerenkov radiation pose a limit for interpretation of the low-loss spectra. In order to reveal the exact band-gap onset using the VEELS method, semiconductors with direct and indirect band-gap transitions have to be treated differently. For direct semiconductors, spectra acquired at thin regions can efficiently minimize the Cerenkov effects. Examples of hexagonal GaN (h-GaN) spectra acquired at different thickness showed that a correct band-gap onset value can be obtained for sample thicknesses up to 0.5 t/{lambda}. In addition, {omega}-q maps acquired at different specimen thicknesses confirm the thickness dependency of Cerenkov losses. For indirect semiconductors, the correct band-gap onset can be obtained in the dark-field mode when the required momentum transfer for indirect transition is satisfied. Dark-field VEEL spectroscopy using a star-shaped entrance aperture provides a way of removing Cerenkov effects in diffraction mode. Examples of Si spectra acquired by displacing the objective aperture revealed the exact indirect transition gap E{sub g} of 1.1 eV.

  18. Monoclinic Tungsten Oxide with {100} Facet Orientation and Tuned Electronic Band Structure for Enhanced Photocatalytic Oxidations.

    PubMed

    Zhang, Ning; Chen, Chen; Mei, Zongwei; Liu, Xiaohe; Qu, Xiaolei; Li, Yunxiang; Li, Siqi; Qi, Weihong; Zhang, Yuanjian; Ye, Jinhua; Roy, Vellaisamy A L; Ma, Renzhi

    2016-04-27

    Exploring surface-exposed highly active crystal facets for photocatalytic oxidations is promising in utilizing monoclinic WO3 semiconductor. However, the previously reported highly active facets for monoclinic WO3 were mainly toward enhancing photocatalytic reductions. Here we report that the WO3 with {100} facet orientation and tuned surface electronic band structure can effectively enhance photocatalytic oxidation properties. The {100} faceted WO3 single crystals are synthesized via a facile hydrothermal method. The UV-visible diffuse reflectance, X-ray photoelectron spectroscopy valence band spectra, and photoelectrochemical measurements suggest that the {100} faceted WO3 has a much higher energy level of valence band maximum compared with the normal WO3 crystals without preferred orientation of the crystal face. The density functional theory calculations reveal that the shift of O 2p and W 5d states in {100} face induce a unique band structure. In comparison with the normal WO3, the {100} faceted WO3 exhibits an O2 evolution rate about 5.1 times in water splitting, and also shows an acetone evolution rate of 4.2 times as well as CO2 evolution rate of 3.8 times in gaseous degradation of 2-propanol. This study demonstrates an efficient crystal face engineering route to tune the surface electronic band structure for enhanced photocatalytic oxidations.

  19. A class of monolayer metal halogenides MX{sub 2}: Electronic structures and band alignments

    SciTech Connect

    Lu, Feng; Wang, Weichao; Luo, Xiaoguang; Cheng, Yahui; Dong, Hong; Liu, Hui; Wang, Wei-Hua; Xie, Xinjian

    2016-03-28

    With systematic first principles calculations, a class of monolayer metal halogenides MX{sub 2} (M = Mg, Ca, Zn, Cd, Ge, Pb; M = Cl, Br, I) has been proposed. Our study indicates that these monolayer materials are semiconductors with the band gaps ranging from 2.03 eV of ZnI{sub 2} to 6.08 eV of MgCl{sub 2}. Overall, the band gap increases with the increase of the electronegativity of the X atom or the atomic number of the metal M. Meanwhile, the band gaps of monolayer MgX{sub 2} (X = Cl, Br) are direct while those of other monolayers are indirect. Based on the band edge curvatures, the derived electron (m{sub e}) and hole (m{sub h}) effective masses of MX{sub 2} monolayers are close to their corresponding bulk values except that the m{sub e} of CdI{sub 2} is three times larger and the m{sub h} for PbI{sub 2} is twice larger. Finally, the band alignments of all the studied MX{sub 2} monolayers are provided using the vacuum level as energy reference. These theoretical results may not only introduce the monolayer metal halogenides family MX{sub 2} into the emerging two-dimensional materials, but also provide insights into the applications of MX{sub 2} in future electronic, visible and ultraviolet optoelectronic devices.

  20. Electronic band structure of zinc blende CdSe and rock salt PbSe semiconductors with silicene-type honeycomb geometry

    NASA Astrophysics Data System (ADS)

    Delerue, Christophe; Vanmaekelbergh, D.

    2015-09-01

    We report on the electronic band structure of 2D CdSe and PbSe semiconductors that have a silicene-type honeycomb geometry. Atomistic tight-binding calculations are performed on several model systems that bear a strong resemblance to the silicene-type honeycomb structures that were recently obtained by nanocrystal self-assembly. The calculated band structures are compared both to those of 2D quantum wells and graphene-type honeycomb structures. It is found that in silicene type CdSe honeycomb structures, the lowest electron conduction bands (derived from S-type nanocrystal wave functions) form a Dirac-type dispersion, very similar as in graphene. The P-type bands are usually more complex. However, when the hybridization between S- and P-type bands increases, a second Dirac cone and a genuine non-trivial flat band is observed, similar as in the case of graphene-type honeycomb structures of CdSe. There is a strong non-trivial gap between the first and second valence band, hosting the quantum spin Hall effect. Silicene-type PbSe structures show Dirac features in their bands, which however can be clouded due to the multi-valley character of PbSe.

  1. Observations of Multi-band Structures in Double Star TC-1 PEACE Electron and HIA Ion Data

    NASA Astrophysics Data System (ADS)

    Mohan Narasimhan, K.; Fazakerley, A. N.; Grimald, S.; Dandouras, I. S.; Mihaljcic, B.; Kistler, L. M.; Owen, C. J.

    2015-12-01

    Several authors have reported inner magnetosphere observations of proton distributions confined to narrow energy bands in the range 1 - 25 keV (Smith and Hoffman (1974), etc). These structures have been described as "nose structures", with reference to their appearance in energy-time spectrograms and are also known as "bands" if they occur for extended periods of time. Multi-nose structures have been observed if 2 or more noses appear at the same time (Vallat et al., 2007). Gaps between "noses" (or "bands") have been explained in terms of the competing corotation, convection and magnetic gradient drifts. Charge exchange losses in slow drift paths for steady state scenarios and the role of substorm injections have also been considered (Li et al., 2000; Ebihara et al., 2004). We analyse observations of electron and ion multi-band structures frequently seen in Double-Star TC1 PEACE and HIA data. We present results from statistical surveys conducted using data from the duration of the mission. Furthermore, using a combination of both statistics and simulations, we test previous theories as to possible formation mechanisms and explore other possible explanations.

  2. Lithium-modulated conduction band edge shifts and charge-transfer dynamics in dye-sensitized solar cells based on a dicyanamide ionic liquid.

    PubMed

    Bai, Yu; Zhang, Jing; Wang, Yinghui; Zhang, Min; Wang, Peng

    2011-04-19

    Lithium ions are known for their potent function in modulating the energy alignment at the oxide semiconductor/dye/electrolyte interface in dye-sensitized solar cells (DSCs), offering the opportunity to control the associated multichannel charge-transfer dynamics. Herein, by optimizing the lithium iodide content in 1-ethyl-3-methylimidazolium dicyanamide-based ionic liquid electrolytes, we present a solvent-free DSC displaying an impressive 8.4% efficiency at 100 mW cm(-2) AM1.5G conditions. We further scrutinize the origins of evident impacts of lithium ions upon current density-voltage characteristics as well as photocurrent action spectra of DSCs based thereon. It is found that, along with a gradual increase of the lithium content in ionic liquid electrolytes, a consecutive diminishment of the open-circuit photovoltage arises, primarily owing to a noticeable downward movement of the titania conduction band edge. The conduction band edge displacement away from vacuum also assists the formation of a more favorable energy offset at the titania/dye interface, and thereby leads to a faster electron injection rate and a higher exciton dissociation yield as implied by transient emission measurements. We also notice that the adverse influence of the titania conduction band edge downward shift arising from lithium addition upon photovoltage is partly compensated by a concomitant suppression of the triiodide involving interfacial charge recombination. © 2011 American Chemical Society

  3. Long-term drift induced by the electronic crosstalk in Terra MODIS Band 29

    NASA Astrophysics Data System (ADS)

    Sun, Junqiang; Madhavan, Sriharsha; Xiong, Xiaoxiong; Wang, Menghua

    2015-10-01

    Terra MODerate Resolution Imaging Spectroradiometer (MODIS) is one of the key sensors in the NASA's Earth Observing System, which has successfully completed 15 years of on-orbit operation. Terra MODIS continues to collect valuable information of the Earth's energy radiation from visible to thermal infrared wavelengths. The instrument has been well characterized over its lifetime using onboard calibrators whose calibration references are traceable to the National Institute of Standards and Technology standards. In this paper, we focus on the electronic crosstalk effect of Terra MODIS band 29, a thermal emissive band (TEB) whose center wavelength is 8.55 µm. Previous works have established the mechanism to describe the effect of the electronic crosstalk in the TEB channels of Terra MODIS. This work utilizes the established methodology to apply to band 29. The electronic crosstalk is identified and characterized using the regularly scheduled lunar observations. The moon being a near-pulse-like source allowed easy detection of extraneous signals around the actual Moon surface. First, the crosstalk-transmitting bands are identified along with their amplitudes. The crosstalk effect then is characterized using a moving average mechanism that allows a high fidelity of the magnitude to be corrected. The lunar-based analysis unambiguously shows that the crosstalk contamination is becoming more severe in recent years and should be corrected in order to maintain calibration quality for the affected spectral bands. Finally, two radiometrically well-characterized sites, Pacific Ocean and Libya 1 desert, are used to assess the impact of crosstalk effect. It is shown that the crosstalk contamination induces a long-term upward drift of 1.5 K in band 29 brightness temperature of MODIS Collection 6 L1B, which could significantly impact the science products. The crosstalk effect also induces strong detector-to-detector differences, which result in severe stripping in the Earth view

  4. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section 101-26.508... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). Procurement by Federal agencies of EDP tape and instrumentation tape (wide and intermediate band...

  5. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section 101-26.508... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). Procurement by Federal agencies of EDP tape and instrumentation tape (wide and intermediate band...

  6. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section 101-26.508... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). Procurement by Federal agencies of EDP tape and instrumentation tape (wide and intermediate band...

  7. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section 101-26.508... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). Procurement by Federal agencies of EDP tape and instrumentation tape (wide and intermediate band...

  8. 41 CFR 101-26.508 - Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... processing (EDP) tape and instrumentation tape (wide and intermediate band). 101-26.508 Section 101-26.508... Programs § 101-26.508 Electronic data processing (EDP) tape and instrumentation tape (wide and intermediate band). Procurement by Federal agencies of EDP tape and instrumentation tape (wide and intermediate band...

  9. Electronic band structure and optical properties of the cubic, Sc, Y and La hydride systems

    SciTech Connect

    Peterman, D.J.

    1980-01-01

    Electronic band structure calculations are used to interpret the optical spectra of the cubic Sc, Y and La hydride systems. Self-consistent band calculations of ScH/sub 2/ and YH/sub 2/ were carried out. The respective joint densities of states are computed and compared to the dielectric functions determined from the optical measurements. Additional calculations were performed in which the Fermi level or band gap energies are rigidly shifted by a small energy increment. These calculations are then used to simulate the derivative structure in thermomodulation spectra and relate the origin of experimental interband features to the calculated energy bands. While good systematic agreement is obtained for several spectral features, the origin of low-energy interband transitions in YH/sub 2/ cannot be explained by these calculated bands. A lattice-size-dependent premature occupation of octahedral sites by hydrogen atoms in the fcc metal lattice is suggested to account for this discrepancy. Various non-self-consistent calculations are used to examine the effect of such a premature occupation. Measurements of the optical absorptivity of LaH/sub x/ with 1.6 < x < 2.9 are presented which, as expected, indicate a more premature occupation of the octahedral sites in the larger LaH/sub 2/ lattice. These experimental results also suggest that, in contrast to recent calculations, LaH/sub 3/ is a small-band-gap semiconductor.

  10. Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

    DOE PAGES

    Wang, Zhenbin; Chu, Iek -Heng; Zhou, Fei; ...

    2016-05-09

    Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu2+-activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu2+ 4f7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu2+-activated red-emitting phosphors that are predicted to exhibit goodmore » chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.« less

  11. Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

    SciTech Connect

    Wang, Zhenbin; Chu, Iek -Heng; Zhou, Fei; Ong, Shyue Ping

    2016-05-09

    Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu2+-activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu2+ 4f7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu2+-activated red-emitting phosphors that are predicted to exhibit good chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.

  12. Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

    SciTech Connect

    Wang, Zhenbin; Chu, Iek -Heng; Zhou, Fei; Ong, Shyue Ping

    2016-05-09

    Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu2+-activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu2+ 4f7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu2+-activated red-emitting phosphors that are predicted to exhibit good chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.

  13. Effect of electron-phonon interaction range for a half-filled band in one dimension.

    PubMed

    Hohenadler, Martin; Assaad, Fakher F; Fehske, Holger

    2012-09-14

    We demonstrate that fermion-boson models with nonlocal interactions can be simulated at finite band filling with the continuous-time quantum Monte Carlo method. We apply this method to explore the influence of the electron-phonon interaction range for a half-filled band in one dimension, covering the full range from the Holstein to the Fröhlich regime. The phase diagram contains metallic, Peierls, and phase-separated regions. Nonlocal interactions suppress the Peierls instability, and thereby lead to almost degenerate power-law exponents for charge and pairing correlations.

  14. Phase analysis on dual-phase steel using band slope of electron backscatter diffraction pattern.

    PubMed

    Kang, Jun-Yun; Park, Seong-Jun; Moon, Man-Been

    2013-08-01

    A quantitative and automated phase analysis of dual-phase (DP) steel using electron backscatter diffraction (EBSD) was attempted. A ferrite-martensite DP microstructure was produced by intercritical annealing and quenching. An EBSD map of the microstructure was obtained and post-processed for phase discrimination. Band slope (BS), which was a measure of pattern quality, exhibited much stronger phase contrast than another conventional one, band contrast. Owing to high sensitivity to lattice defect and little orientation dependence, BS provided handiness in finding a threshold for phase discrimination. Its grain average gave a superior result on the discrimination and volume fraction measurement of the constituent phases in the DP steel.

  15. Effect of boron localized states on the conduction band transport in B{sub x}Ga{sub 1−x}P

    SciTech Connect

    Petznick, S.; Ostheim, L. Klar, P. J.; Liebich, S.; Volz, K.; Stolz, W.

    2014-12-01

    We study the magnetotransport properties of an n-type (B,Ga)P:Te alloy and an n-type GaP:Te reference under hydrostatic pressure up to 17 kilobars in the temperature range from 1.5 to 300 K. The free carrier concentration and the mobility of the reference sample are almost independent of the applied hydrostatic pressure at room temperature. In contrast, the free carrier concentration as well as the mobility in the B{sub 0.012}Ga{sub 0.988}P:Te alloy increase by about 30% over the accessible pressure range. The observations are explained by assuming that a boron-related density of localized states exists in the vicinity of the conduction band edge of the alloy. These boron states act as electron traps as well as efficient scatter centers. Applying hydrostatic pressure shifts the energetic positions of conduction band edge at the X-point (where the electron transport takes place) and of the boron states apart reducing the impact of boron on the electronic transport properties of the alloy.

  16. X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

    SciTech Connect

    Lambrecht, W.R.L.; Rashkeev, S.N.; Segall, B.

    1997-04-01

    X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

  17. Electronic states in Ge/Si quantum dots with type-II band alignment initiated by space-charge spectroscopy

    NASA Astrophysics Data System (ADS)

    Yakimov, A. I.; Dvurechenskii, A. V.; Nikiforov, A. I.; Bloshkin, A. A.; Nenashev, A. V.; Volodin, V. A.

    2006-03-01

    Space-charge spectroscopy was employed to study electronic structure of a stack of four layers of Ge quantum dots (QD’s) coherently embedded in an n -type Si(001) matrix. Evidence for an electron confinement in Si in the vicinity of neutral Ge dots was found. From the temperature- and frequency-dependent measurements the electron binding energy was determined to be ˜50meV . Existence of localized electronic states is explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots. To support experimental results we performed numerical analysis of three-dimensional strain distribution and electronic structure of the sample under investigation. The strain distribution was found in terms of atomic positions using a valence-force-field model with a Keating interatomic potential. The electronic energy levels were calculated by solving a three-dimensional effective mass Schrödinger equation. The carrier confinement potential in this equation is modified by the strain distribution. The calculated confined eigenenergies agree with our experimental values deduced from the admittance spectroscopy. The data obtained in this work may serve as a guideline to interpret efficient photo- and electroluminescence as well as enhanced quantum efficiency of photodetectors and solar cells with Ge QD’s stacked in a multilayer structure.

  18. Ab initio electronic band structure study of III-VI layered semiconductors

    NASA Astrophysics Data System (ADS)

    Olguín, Daniel; Rubio-Ponce, Alberto; Cantarero, Andrés

    2013-08-01

    We present a total energy study of the electronic properties of the rhombohedral γ-InSe, hexagonal ɛ-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

  19. Conducting Research on the Internet: Strategies for Electronic Interviewing.

    ERIC Educational Resources Information Center

    Persichitte, Kay A.; And Others

    This study provides guidelines for using electronic mail for data collection and sheds light on some of the substantive issues related to research via this medium. Researchers creating electronic interview situations for the study stressed that the atmosphere should be informal and conversational. Interviewees were encouraged to use typical…

  20. Bounce resonance scattering of radiation belt electrons by H+ band EMIC waves

    NASA Astrophysics Data System (ADS)

    Cao, Xing; Ni, Binbin; Summers, Danny; Bortnik, Jacob; Tao, Xin; Shprits, Yuri Y.; Lou, Yuequn; Gu, Xudong; Fu, Song; Shi, Run; Xiang, Zheng; Wang, Qi

    2017-02-01

    We perform a detailed analysis of bounce-resonant pitch angle scattering of radiation belt electrons due to electromagnetic ion cyclotron (EMIC) waves. It is found that EMIC waves can resonate with near-equatorially mirroring electrons over a wide range of L shells and energies. H+ band EMIC waves efficiently scatter radiation belt electrons of energy >100 keV from near 90° pitch angles to lower pitch angles where the cyclotron resonance mechanism can take over to further diffuse electrons into the loss cone. Bounce-resonant electron pitch angle scattering rates show a strong dependence on L shell, wave normal angle distribution, and wave spectral properties. We find distinct quantitative differences between EMIC wave-induced bounce-resonant and cyclotron-resonant diffusion coefficients. Cyclotron-resonant electron scattering by EMIC waves has been well studied and found to be a potentially crucial electron scattering mechanism. The new investigation here demonstrates that bounce-resonant electron scattering may also be very important. We conclude that bounce resonance scattering by EMIC waves should be incorporated into future modeling efforts of radiation belt electron dynamics.

  1. Ab initio electronic structure of a small band gap polymer: Poly-aminosquaraine

    NASA Astrophysics Data System (ADS)

    Brocks, G.

    1995-02-01

    Poly-aminosquaraine is the prototype of a class of organic polymers which recently has been shown to provide a route towards small band gap materials. We predict that poly-aminosquaraine has a small band gap of ˜0.5 eV. Our prediction is based upon a detailed analysis of first-principles calculations of the geometrical and the electronic structure, using the Car-Parrinello technique of simultaneous optimization. We analyze the bands around the Fermi level in terms of a simple tight-binding model based upon the highest occupied and lowest occupied (HOMO/LUMO) states of the individual squaraine molecules. The small band gap of the polymer is shown to be the result of the small splitting between the occupied and the unoccupied states of the squaraine molecule combined with a favorable hybridization in the polymer. It should be possible to analyze the electronic structure of a wide class of squaraine based polymers in the same way.

  2. Band gap widening at random CIGS grain boundary detected by valence electron energy loss spectroscopy

    NASA Astrophysics Data System (ADS)

    Keller, Debora; Buecheler, Stephan; Reinhard, Patrick; Pianezzi, Fabian; Bissig, Benjamin; Carron, Romain; Hage, Fredrik; Ramasse, Quentin; Erni, Rolf; Tiwari, Ayodhya N.

    2016-10-01

    Cu(In,Ga) Se2 (CIGS) thin film solar cells have demonstrated very high efficiencies, but still the role of nanoscale inhomogeneities in CIGS and their impact on the solar cell performance are not yet clearly understood. Due to the polycrystalline structure of CIGS, grain boundaries are very common structural defects that are also accompanied by compositional variations. In this work, we apply valence electron energy loss spectroscopy in scanning transmission electron microscopy to study the local band gap energy at a grain boundary in the CIGS absorber layer. Based on this example, we demonstrate the capabilities of a 2nd generation monochromator that provides a very high energy resolution and allows for directly relating the chemical composition and the band gap energy across the grain boundary. A band gap widening of about 20 meV is observed at the grain boundary. Furthermore, the compositional analysis by core-loss EELS reveals an enrichment of In together with a Cu, Ga and Se depletion at the same area. The experimentally obtained results can therefore be well explained by the presence of a valence band barrier at the grain boundary.

  3. Size effect on the electronic and optical band gap of CdSe QD

    SciTech Connect

    Sisodia, Namita

    2014-04-24

    Present paper deals with a critical and comprehensive analysis of the dependence of photo emission (PE) electronic band gap and optical absorption (OA) excitonic band gap on the size of CdSe QD, via connecting it with excitonic absorbance wavelength. Excitonic absorbance wavelength is determined through an empirical fit of established experimental evidences. Effective excitonic charge and Bohr radius is determined as a function of size. Increase in size of the CdSe QD results in greater Bohr radius and smaller effective excitonic charge. Excitonic binding energy as a degree of size of QD is also calculated which further relates with the difference in PE electronic and OA optical band gaps. It is also shown that with increase in size of CdSe QD, the excitonic binding energy decreases which consequently increases differences in two band gaps. Our results are very well comparable with the established results. Explanation for the origin of the unusual optical properties of CdSe QD has been also discussed.

  4. Impact of the Electronic Band Structure in High-Harmonic Generation Spectra of Solids

    NASA Astrophysics Data System (ADS)

    Tancogne-Dejean, Nicolas; Mücke, Oliver D.; Kärtner, Franz X.; Rubio, Angel

    2017-02-01

    An accurate analytic model describing the microscopic mechanism of high-harmonic generation (HHG) in solids is derived. Extensive first-principles simulations within a time-dependent density-functional framework corroborate the conclusions of the model. Our results reveal that (i) the emitted HHG spectra are highly anisotropic and laser-polarization dependent even for cubic crystals; (ii) the harmonic emission is enhanced by the inhomogeneity of the electron-nuclei potential; the yield is increased for heavier atoms; and (iii) the cutoff photon energy is driver-wavelength independent. Moreover, we show that it is possible to predict the laser polarization for optimal HHG in bulk crystals solely from the knowledge of their electronic band structure. Our results pave the way to better control and optimize HHG in solids by engineering their band structure.

  5. Impact of the Electronic Band Structure in High-Harmonic Generation Spectra of Solids.

    PubMed

    Tancogne-Dejean, Nicolas; Mücke, Oliver D; Kärtner, Franz X; Rubio, Angel

    2017-02-24

    An accurate analytic model describing the microscopic mechanism of high-harmonic generation (HHG) in solids is derived. Extensive first-principles simulations within a time-dependent density-functional framework corroborate the conclusions of the model. Our results reveal that (i) the emitted HHG spectra are highly anisotropic and laser-polarization dependent even for cubic crystals; (ii) the harmonic emission is enhanced by the inhomogeneity of the electron-nuclei potential; the yield is increased for heavier atoms; and (iii) the cutoff photon energy is driver-wavelength independent. Moreover, we show that it is possible to predict the laser polarization for optimal HHG in bulk crystals solely from the knowledge of their electronic band structure. Our results pave the way to better control and optimize HHG in solids by engineering their band structure.

  6. Electronic band structure and Fermi surface of ferromagnetic Tb: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Döbrich, K. M.; Bihlmayer, G.; Starke, K.; Prieto, J. E.; Rossnagel, K.; Koh, H.; Rotenberg, E.; Blügel, S.; Kaindl, G.

    2007-07-01

    We have investigated the bulk valence-band structure of Tb metal in the ferromagnetic phase by angle-resolved photoelectron spectroscopy and full-potential-linearized-augmented-plane-wave calculations. The experiments were performed at undulator beamline 7.0.1 of the Advanced Light Source using a three-axis rotatable low-temperature goniometer and a display-type photoelectron spectrometer that give access to a large region of momentum space. The results of our calculations, which make use of recent progress in the theoretical description of the magnetic properties of 4f metals, are in remarkably good agreement with experiment. This can be best seen from a comparison of the electronic structure in high-symmetry directions, at critical points, on Fermi contours, and at band crossings with the Fermi level. To our knowledge, the present work represents the most detailed combined experimental and theoretical study of the electronic structure of a magnetic lanthanide metal to date.

  7. Theoretical and experimental differential cross sections for electron impact excitation of the electronic bands of furfural

    NASA Astrophysics Data System (ADS)

    Jones, D. B.; Neves, R. F. C.; Lopes, M. C. A.; da Costa, R. F.; do N. Varella, M. T.; Bettega, M. H. F.; Lima, M. A. P.; García, G.; Limão-Vieira, P.; Brunger, M. J.

    2016-03-01

    We report results from a joint experimental and theoretical investigation into electron scattering from the important industrial species furfural (C5H4O2). Specifically, differential cross sections (DCSs) have been measured and calculated for the electron-impact excitation of the electronic states of C5H4O2. The measurements were carried out at energies in the range 20-40 eV, and for scattered-electron angles between 10° and 90°. The energy resolution of those experiments was typically ˜80 meV. Corresponding Schwinger multichannel method with pseudo-potential calculations, for energies between 6-50 eV and with and without Born-closure, were also performed for a sub-set of the excited electronic-states that were accessed in the measurements. Those calculations were undertaken at the static exchange plus polarisation-level using a minimum orbital basis for single configuration interaction (MOB-SCI) approach. Agreement between the measured and calculated DCSs was qualitatively quite good, although to obtain quantitative accord, the theory would need to incorporate even more channels into the MOB-SCI. The role of multichannel coupling on the computed electronic-state DCSs is also explored in some detail.

  8. Room-Temperature Electron Spin Relaxation of Triarylmethyl Radicals at X- and Q-bands

    PubMed Central

    Krumkacheva, Olesya A.; Strizhakov, Rodion K.; Rogozhnikova, Olga Yu.; Troitskaya, Tatiana I.

    2016-01-01

    Triarylmethyl radicals (trityls, TAMs) represent a relatively new class of spin labels. The long relaxation of trityls at room temperature in liquid solutions makes them a promising alternative for traditional nitroxides. In this work we have synthesized a series of TAMs including perdeuterated Finland trityl (D36 form) , mono-, di-, and tri-ester derivatives of Finland-D36 trityl, deuterated form of OX63, dodeca-n-butyl homologue of Finland trityl, and triamide derivatives of Finland trityl with primary and secondary amines attached. We have studied room-temperature relaxation properties of these TAMs in liquids using pulsed Electron Paramagnetic Resonance (EPR) at two microwave frequency bands. We have found the clear dependence of phase memory time (Tm~T2) on magnetic field: room-temperature Tm values are ~1.5-2.5 times smaller at Q-band (34 GHz, 1.2 T) compared to X-band (9 GHz, 0.3 T). This trend is ascribed to the contribution from g-anisotropy that is negligible at lower magnetic fields but comes into play at Q-band. In agreement with this, while T1~Tm at X-band, we observe T1>Tm at Q-band due to increased contributions from incomplete motional averaging of g-anisotropy. In addition, the viscosity dependence shows that (1/Tm-1/T1) is proportional to the tumbling correlation time of trityls. Based on the analysis of previous data and results of the present work, we conclude that in general situation where spin label is at least partly mobile, X-band is most suitable for application of trityls for room-temperature pulsed EPR distance measurements. PMID:26001103

  9. Electron-impact excitation of the 31. 4-eV band in N sub 2

    SciTech Connect

    de Souza, G.G.B.; Bielschowsky, C.E.; Lucas, C.A.; Souza, A.C.A. )

    1990-08-01

    Generalized oscillator strengths (GOS) for the dipole-forbidden 31.4-eV band in N{sub 2} have been determined both experimentally and theoretically. The experimental values for the GOS were obtained using a crossed-beam electron spectrometer at 1-keV impact energy. The theoretical results were determined using the first Born approximation with {ital ab} {ital initio} configuration-interaction target wave functions.

  10. Virus Isolation and Preparation of Sucrose-Banded Chikungunya Virus Samples for Transmission Electron Microscopy.

    PubMed

    Lim, Chang-Kweng

    2016-01-01

    Virus isolation and purification is an invaluable technique in virology to detect and characterize viruses. This chapter describes a large-scale Chikungunya virus (CHIKV) propagation and purification methods by using discontinuous sucrose gradient, and sample preparation for transmission electron microscopy. Sucrose-banding yields large quantities of high-titer (10(10) pfu/ml) CHIKV stocks. Such stocks are stable for years when stored at -70 °C.

  11. Theoretical modeling of low-energy electronic absorption bands in reduced cobaloximes.

    PubMed

    Bhattacharjee, Anirban; Chavarot-Kerlidou, Murielle; Dempsey, Jillian L; Gray, Harry B; Fujita, Etsuko; Muckerman, James T; Fontecave, Marc; Artero, Vincent; Arantes, Guilherme M; Field, Martin J

    2014-10-06

    The reduced Co(I) states of cobaloximes are powerful nucleophiles that play an important role in the hydrogen-evolving catalytic activity of these species. In this work we analyze the low-energy electronic absorption bands of two cobaloxime systems experimentally and use a variety of density functional theory and molecular orbital ab initio quantum chemical approaches. Overall we find a reasonable qualitative understanding of the electronic excitation spectra of these compounds but show that obtaining quantitative results remains a challenging task.

  12. W-Band Free Electron Laser for High Gradient Structure Research

    NASA Astrophysics Data System (ADS)

    Lidia, S. M.; Whittum, D. H.; Donohue, J. T.

    1997-05-01

    We discuss the use of a free electron laser in support of material stress studies of W-band high-gradient accelerating structures. We propose the use of the linear induction accelerator LELIA (CEA/CESTA, France) to generate a 1-kiloamp, 80-ns FWHM electron pulse. We present a design for a helical FEL TE_11 amplifier that will generate high peak power (100's MW) at 93 GHz. We support our design with analytical estimates of gain, and with numerical simulations of power and phase development.

  13. Theoretical Modeling of Low Energy Electronic Absorption Bands in Reduced Cobaloximes

    PubMed Central

    Bhattacharjee, Anirban; Chavarot-Kerlidou, Murielle; Dempsey, Jillian L.; Gray, Harry B.; Fujita, Etsuko; Muckerman, James T.; Fontecave, Marc; Artero, Vincent; Arantes, Guilherme M.; Field, Martin J.

    2015-01-01

    The reduced Co(I) states of cobaloximes are powerful nucleophiles that play an important role in the hydrogen-evolving catalytic activity of these species. In this work we have analyzed the low energy electronic absorption bands of two cobaloxime systems experimentally and using a variety of density functional theory and molecular orbital ab initio quantum chemical approaches. Overall we find a reasonable qualitative understanding of the electronic excitation spectra of these compounds but show that obtaining quantitative results remains a challenging task. PMID:25113847

  14. Theoretical modeling of low-energy electronic absorption bands in reduced cobaloximes

    DOE PAGES

    Bhattacharjee, Anirban; Chavarot-Kerlidou, Murielle; Dempsey, Jillian L.; ...

    2014-08-11

    Here, we report that the reduced Co(I) states of cobaloximes are powerful nucleophiles that play an important role in the hydrogen-evolving catalytic activity of these species. In this work we have analyzed the low energy electronic absorption bands of two cobaloxime systems experimentally and using a variety of density functional theory and molecular orbital ab initio quantum chemical approaches. Overall we find a reasonable qualitative understanding of the electronic excitation spectra of these compounds but show that obtaining quantitative results remains a challenging task.

  15. Theoretical modeling of low-energy electronic absorption bands in reduced cobaloximes

    SciTech Connect

    Bhattacharjee, Anirban; Chavarot-Kerlidou, Murielle; Dempsey, Jillian L.; Gray, Harry B.; Fujita, Etsuko; Muckerman, James T.; Fontecave, Marc; Artero, Vincent; Arantes, Guilherme M.; Field, Martin J.

    2014-08-11

    Here, we report that the reduced Co(I) states of cobaloximes are powerful nucleophiles that play an important role in the hydrogen-evolving catalytic activity of these species. In this work we have analyzed the low energy electronic absorption bands of two cobaloxime systems experimentally and using a variety of density functional theory and molecular orbital ab initio quantum chemical approaches. Overall we find a reasonable qualitative understanding of the electronic excitation spectra of these compounds but show that obtaining quantitative results remains a challenging task.

  16. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    DOE PAGES

    Malasi, A.; Taz, H.; Farah, A.; ...

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergentmore » semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.« less

  17. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    PubMed Central

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-01-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned. PMID:26670421

  18. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    NASA Astrophysics Data System (ADS)

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  19. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    SciTech Connect

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  20. High gain harmonic generation free electron lasers enhanced by pseudoenergy bands

    NASA Astrophysics Data System (ADS)

    Tanaka, Takashi; Kinjo, Ryota

    2017-08-01

    We propose a new scheme for high gain harmonic generation free electron lasers (HGHG FELs), which is seeded by a pair of intersecting laser beams to interact with an electron beam in a modulator undulator located in a dispersive section. The interference of the laser beams gives rise to a two-dimensional modulation in the energy-time phase space because of a strong correlation between the electron energy and the position in the direction of dispersion. This eventually forms pseudoenergy bands in the electron beam, which result in efficient harmonic generation in HGHG FELs in a similar manner to the well-known scheme using the echo effects. The advantage of the proposed scheme is that the beam quality is less deteriorated than in other existing schemes.

  1. The optical band gap and surface free energy of polyethylene modified by electron beam irradiations

    NASA Astrophysics Data System (ADS)

    Abdul-Kader, A. M.

    2013-04-01

    In this study, investigations have been carried out on electron beam irradiated ultra high molecular weight polyethylene (UHMWPE). Polyethylene samples were irradiated with 1.5 MeV electron beam at doses ranging from 50 to 500 kGy. Modifications in optical properties and photoluminescence behavior of the polymer were evaluated by UV-vis and photoluminescence techniques. Changes of surface layer composition of UHMWPE produced by electron irradiations were studied by Rutherford back scattering spectrometry (RBS). The change in wettability and surface free energy induced by irradiations was also investigated. The optical absorption studies reveal that both optical band gap and Urbach's energy decreases with increasing electron dose. A correlation between energy gap and the number of carbon atoms in clusters is discussed. Photoluminescence spectra were reveal remarkable decrease in the integrated luminescence intensity with increasing irradiation dose. Contact angle measurements showed that wettability and surface free energy increases with increasing the irradiation dose.

  2. Design and application of multimegawatt X-band deflectors for femtosecond electron beam diagnostics

    DOE PAGES

    Dolgashev, Valery A.; Bowden, Gordon; Ding, Yuantao; ...

    2014-10-02

    Performance of the x-ray free electron laser Linac Coherent Light Source (LCLS) and the Facility for Advanced Accelerator Experimental Tests (FACET) is determined by the properties of their extremely short electron bunches. Multi-GeV electron bunches in both LCLS and FACET are less than 100 fs long. Optimization of beam properties and understanding of free-electron laser operation require electron beam diagnostics with time resolution of about 10 fs. We designed, built and commissioned a set of high frequency X-band deflectors which can measure the beam longitudinal space charge distribution and slice energy spread to better than 10 fs resolution at fullmore » LCLS energy (14 GeV), and with 70 fs resolution at full FACET energy (20 GeV). Use of high frequency and high gradient in these devices allows them to reach unprecedented performance. We report on the physics motivation, design considerations, operational configuration, cold tests, and typical results of the X-band deflector systems currently in use at SLAC.« less

  3. Designing and engineering electronic band gap of graphene nanosheet by P dopants

    NASA Astrophysics Data System (ADS)

    Mohammed, Mohammed H.

    2017-05-01

    Chemical doping is promising route to modify and control the electronic properties of graphene Nanosheet (GNS). The electronic properties of the GNS are investigated with and without various concentrations of phosphorus impurities in the various sites by using the first-principles of the density functional theory (DFT) method, which realized in Quantum Espresso packages. My founding results show that the electronic band structure of the GNS is not only depending on the concentrations of phosphorus impurities, but also depending on the geometrical pattern of phosphorus impurities in the GNS. Furthermore, I found out that there is an electronic band gap with a single phosphorus impurities and it is increased with increasing the concentrations of phosphorus impurities. Also, total energy is affected and decreased with increasing the concentrations of phosphorus impurities, which is led to make all structures are unstable and more reactive. Then, phosphorus impurities are significantly contributing to engineering, control and alter the electronic properties of the GNS, which is very important in various applications.

  4. A broad-band VLF-burst associated with ring-current electrons. [geomagnetic storms

    NASA Technical Reports Server (NTRS)

    Maeda, K.

    1982-01-01

    Frequency band broadening takes place just outside of the nighttime plasmasphere, where the density of cold plasma is known to be very low during the later phase of a geomagnetic storm. Instead of the gradual broadening of several hours duration, a burst type broadening of VLF emission lasting less than ten minutes was observed by Explorer 45 in a similar location. The magnetic field component of this emission is very weak and the frequency spreads below the local half electron cyclotron frequency. Corresponding enhancement of the anisotropic ring current electrons is also very sudden and limited below the order of 10 keV without significant velocity dispersion, in contrast to the gradual broadening events. The cause of this type of emission band spreading can be attributed to the generation of the quasielectrostatic whistler mode emission of short wavelength by hot bimaxwellian electrons surging into the domain of relatively low density magnetized cold plasma. The lack of energy dispersion in the enhanced electrons indicates that the inner edge of the plasma sheet, the source of these hot electrons, is not far from the location of this event.

  5. Surface-plasmon enhanced photodetection at communication band based on hot electrons

    SciTech Connect

    Wu, Kai; Zhan, Yaohui E-mail: xfli@suda.edu.cn; Wu, Shaolong; Deng, Jiajia; Li, Xiaofeng E-mail: xfli@suda.edu.cn

    2015-08-14

    Surface plasmons can squeeze light into a deep-subwavelength space and generate abundant hot electrons in the nearby metallic regions, enabling a new paradigm of photoconversion by the way of hot electron collection. Unlike the visible spectral range concerned in previous literatures, we focus on the communication band and design the infrared hot-electron photodetectors with plasmonic metal-insulator-metal configuration by using full-wave finite-element method. Titanium dioxide-silver Schottky interface is employed to boost the low-energy infrared photodetection. The photodetection sensitivity is strongly improved by enhancing the plasmonic excitation from a rationally engineered metallic grating, which enables a strong unidirectional photocurrent. With a five-step electrical simulation, the optimized device exhibits an unbiased responsivity of ∼0.1 mA/W and an ultra-narrow response band (FWHM = 4.66 meV), which promises to be a candidate as the compact photodetector operating in communication band.

  6. Unraveling the origins of conduction band valley degeneracies in Mg2Si(1-x)Sn(x) thermoelectrics.

    PubMed

    Kim, Chang-Eun; Soon, Aloysius; Stampfl, Catherine

    2016-01-14

    To better understand the thermoelectric efficiency of the Mg-based thermoelectrics, using hybrid density-functional theory, we study the microscopic origins of valley degeneracies in the conduction band of the solid solution Mg2Si(1-x)Sn(x) and its constituent components--namely, Mg2Si and Mg2Sn. In the solid solution of Mg2Si(1-x)Sn(x), the sublattices are expected to undergo either tensile or compressive strain in the light of Vegard's law. Interestingly, we find both tensile strain of Mg2Si and compressive strain of Mg2Sn enhance the conduction band valley degeneracy. We suggest that the optimal sublattice strain as one of the origins of the enhanced Seebeck coefficient in the Mg2Si(1-x)Sn(x) system. In order to visualize the enhanced band valley degeneracy at elevated temperatures, the ground state eigenvalues and weights are projected by convolution functions that account for high temperature effects. Our results provide theoretical evidences for the role of sublattice strain in the band valley degeneracy observed in Mg2Si(1-x)Sn(x).

  7. Conduction band topology and optical properties of monoclinic ZrO_2

    NASA Astrophysics Data System (ADS)

    Freeman, A. J.; Medvedeva, J. E.; Geller, C. B.

    2004-03-01

    Zirconia is an attractive base material for a wide variety of optical applications, on account of its high refractive index, large band gap and low optical loss. We report highly precise density functional theory calculations on pure, monoclinic zirconia employing the self-consistent screened exchange local-density approximation(R. Asahi, W. Mannstadt, A. J. Freeman, Phys. Rev. B) 59, 7486 (1999) (sX-LDA) with the full-potential linearized augmented plane wave (FLAPW) method(E. Wimmer, H. Krakauer, M. Weinert, A.J. Freeman, Phys. Rev. B) 24, 864 (1981). The sX-LDA substantially reduces the overbinding error in the LDA resulting in a more accurate description of the band gap and excited states in semiconductors(C.B. Geller er al), Appl. Phys. Lett. 79, 368 (2001) and insulators (this work). The predicted sX-LDA indirect band gap of monoclinic ZrO2 is 5.7 eV, in agreement with experiment. The effects of carrier concentration on the effective masses and optical properties of zirconia are discussed.

  8. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface.

    PubMed

    Jałochowski, M; Kwapiński, T; Łukasik, P; Nita, P; Kopciuszyński, M

    2016-07-20

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed.

  9. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface

    NASA Astrophysics Data System (ADS)

    Jałochowski, M.; Kwapiński, T.; Łukasik, P.; Nita, P.; Kopciuszyński, M.

    2016-07-01

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed.

  10. Density of states of the one-dimensional electron gas: Impurity levels, impurity bands, and the band tail

    NASA Astrophysics Data System (ADS)

    Gold, A.; Ghazali, A.

    1994-06-01

    The density of states of cylindrical quantum wires is calculated in the presence of charged impurities located in the center of the wire. A multiple-scattering approach (Klauder's fifth approximation), which represents a self-consistent t-matrix approximation, is used. For small impurity densities and in the weak screening limit the ground-state impurity band and four excited-state impurity bands are obtained within our approach. We find good agreement between the numerically obtained spectral densities with the corresponding analytical spectral densities calculated with the single-impurity wave functions. The merging of impurity bands is studied. For large impurity densities we obtain a band tail. We present an analytical expression for the disorder-induced renormalized band-edge energy in the band-tail regime.

  11. Universality of the Hall Conductivity in Interacting Electron Systems

    NASA Astrophysics Data System (ADS)

    Giuliani, Alessandro; Mastropietro, Vieri; Porta, Marcello

    2017-02-01

    We prove the quantization of the Hall conductivity for general weakly interacting gapped fermionic systems on two-dimensional periodic lattices. The proof is based on fermionic cluster expansion techniques combined with lattice Ward identities, and on a reconstruction theorem that allows us to compute the Kubo conductivity as the analytic continuation of its imaginary time counterpart.

  12. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave Particle Interactions

    NASA Technical Reports Server (NTRS)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D (alpha)) and momentum (D(pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies 10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = +/-1, +/-2,...+/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D alpha and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than D alpha coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than D alpha coefficients for the case n does not = 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of D alpha coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle

  13. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave-Particle Interactions

    NASA Technical Reports Server (NTRS)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D(sub (alpha alpha))) and momentum (D(sub pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L=4.6 and 6.8 for electron energies less than or equal to 10 keV. Landau (n=0) resonance and cyclotron harmonic resonances n= +/- 1, +/-2, ... +/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n=+1 and n=+2. A major contribution to momentum diffusion coefficients appears from n=+2. However, the banded structures in D(sub alpha alpha) and D(sub pp) coefficients appear only in the profile of diffusion coefficients for n=+2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The D(sub pp) diffusion coefficient for ECH waves is one to two orders smaller than D(sub alpha alpha) coefficients. For chorus waves, D(sub pp) coefficients are about an order of magnitude smaller than D(sub alpha alpha) coefficients for the case n does not equal 0. In case of Landau resonance, the values of D(sub pp) coefficient are generally larger than the values of D(sub alpha alpha) coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances

  14. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave Particle Interactions

    NASA Technical Reports Server (NTRS)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D (alpha)) and momentum (D(pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies 10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = +/-1, +/-2,...+/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D alpha and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than D alpha coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than D alpha coefficients for the case n does not = 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of D alpha coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle

  15. Electronic conduction in polymers, carbon nanotubes and graphene.

    PubMed

    Kaiser, Alan B; Skákalová, Viera

    2011-07-01

    In the years since the discovery of organic polymers that exhibited electrical conductivities comparable to some metals, other novel carbon-based conductors have been developed, including carbon nanotubes and graphene (monolayers of carbon atoms). In this critical review, we discuss the common features and the differences in the conduction mechanisms observed in these carbon-based materials, which range from near ballistic and conventional metallic conduction to fluctuation-assisted tunnelling, variable-range hopping and more exotic mechanisms. For each category of material, we discuss the dependence of conduction on the morphology of the sample. The presence of heterogeneous disorder is often particularly important in determining the overall behaviour, and can lead to surprisingly similar conduction behaviour in polymers, carbon nanotube networks and chemically-derived graphene (122 references).

  16. Micro-metric electronic patterning of a topological band structure using a photon beam

    NASA Astrophysics Data System (ADS)

    Golden, Mark; Frantzeskakis, Emmanouil; de Jong, Nick; Huang, Yingkai; Wu, Dong; Pan, Yu; de Visser, Anne; van Heumen, Erik; van Bay, Tran; Zwartsenberg, Berend; Pronk, Pieter; Varier Ramankutty, Shyama; Tytarenko, Alona; Xu, Nan; Plumb, Nick; Shi, Ming; Radovic, Milan; Varkhalov, Andrei

    2015-03-01

    The only states crossing EF in ideal, 3D TIs are topological surface states. Single crystals of Bi2Se3andBi2Te3 are too defective to exhibit bulk-insulating behaviour, and ARPES shows topologically trivial 2DEGs at EF in the surface region due to downward band bending. Ternary & quaternary alloys of Bi /Te /Se /Sb hold promise for obtaining bulk-insulating crystals. Here we report ARPES data from quaternary, bulk-insulating, Bi-based TIs. Shortly after cleavage in UHV, downward band bending pulls the bulk conduction band below EF, once again frustrating the ``topological only'' ambition for the Fermi surface. However, there is light at the end of the tunnel: we show that a super-band-gap photon beam generates a surface photovoltage sufficient to flatten the bands, thereby recovering the ideal, ``topological only'' situation. In our bulk-insulating quaternary TIs, this effect is local in nature, and permits the writing of arbitrary, micron-sized patterns in the topological energy landscape at the surface. Support from FOM, NWO and the EU is gratefully acknowledged.

  17. High-energy electronic interaction in the 3 d band of high-temperature iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Evtushinsky, D. V.; Yaresko, A. N.; Zabolotnyy, V. B.; Maletz, J.; Kim, T. K.; Kordyuk, A. A.; Viazovska, M. S.; Roslova, M.; Morozov, I.; Beck, R.; Aswartham, S.; Harnagea, L.; Wurmehl, S.; Berger, H.; Rogalev, V. A.; Strocov, V. N.; Wolf, T.; Zhigadlo, N. D.; Büchner, B.; Borisenko, S. V.

    2017-08-01

    One of the most unique and robust experimental facts about iron-based superconductors is the renormalization of the electronic band dispersion by factor of 3 and more near the Fermi level. Obviously related to the electron pairing, this prominent deviation from the band theory lacks understanding. Experimentally studying the entire spectrum of the valence electrons in iron arsenides, we have found an unexpected depletion of the spectral weight in the middle of the iron-derived band, which is accompanied by a drastic increase of the scattering rate. At the same time, the measured arsenic-derived band exhibits very good agreement with theoretical calculations. We show that the low-energy Fermi velocity renormalization should be viewed as a part of the modification of the spectral function by a strong electronic interaction. Such an interaction with an energy scale of the whole d band appears to be a hallmark of many families of unconventional superconductors.

  18. The change in dielectric constant, AC conductivity and optical band gaps of polymer electrolyte film: Gamma irradiation

    SciTech Connect

    Raghu, S. Subramanya, K. Sharanappa, C. Mini, V. Archana, K. Sanjeev, Ganesh Devendrappa, H.

    2014-04-24

    The effects of gamma (γ) irradiation on dielectric and optical properties of polymer electrolyte film were investigated. The dielectric constant and ac conductivity increases with γ dose. Also optical band gap decreased from 4.23 to 3.78ev after irradiation. A large dependence of the polymer properties on the irradiation dose was noticed. This suggests that there is a possibility of improving polymer electrolyte properties on gamma irradiation.

  19. Reconfigurable electronics using conducting metal-organic frameworks

    DOEpatents

    Allendorf, Mark D.; Talin, Albert Alec; Leonard, Francois; Stavila, Vitalie

    2017-07-18

    A device including a porous metal organic framework (MOF) disposed between two terminals, the device including a first state wherein the MOF is infiltrated by a guest species to form an electrical path between the terminals and a second state wherein the electrical conductivity of the MOF is less than the electrical conductivity in the first state. A method including switching a porous metal organic framework (MOF) between two terminals from a first state wherein a metal site in the MOF is infiltrated by a guest species that is capable of charge transfer to a second state wherein the MOF is less electrically conductive than in the first state.

  20. Effects of atomistic defects on coherent electron transmission in Si nanowires: Full band calculations

    NASA Astrophysics Data System (ADS)

    Ko, Young-Jo; Shin, Mincheol; Lee, Seongjae; Park, Kyoung Wan

    2001-01-01

    The effects of atomistic imperfections on coherent electron transmission in Si[100] quantum wires a few nanometers wide are investigated using a tight-binding Green function approach. We find a significant suppression in the electron transmission by atomistic imperfections in these extremely narrow wires. Multiple conductance peaks or oscillations can be easily developed by the presence of only several vacancy defects, which can lead to a finite zero-conductance region around the subband edge. Several substitutional defects and surface dangling bonds generally result in decreased, oscillatory conductances with more significant effects found in narrower wires.

  1. The electronic band structure of Ge1-x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein-Moss effect

    NASA Astrophysics Data System (ADS)

    Polak, M. P.; Scharoch, P.; Kudrawiec, R.

    2017-05-01

    A comprehensive and detailed study of the composition dependence of lattice constants, band gaps and band offsets has been performed for bulk Ge1-x Sn x alloy in the full composition range using state-of-the-art density functional theory methods. A spectral weight approach to band unfolding has been applied as a means of distinguishing the indirect and direct band gaps from folded supercell band structures. In this way, four characteristic regions of the band gap character have been identified for Ge1-x Sn x alloy: an indirect band gap (x  <  6.5%), a direct band gap (6.5%  <  x  <  25%) and an inverse band gap (x  >  25%) with inverse spin-orbit split-off for 45%  <  x  <  85%. In general, it has been observed that the bowing parameters of band edges (Γ and L-point in conduction band (CBΓ and CB L ), valence band (VB), and spin-orbit (SO) band) are rather large ({{b}\\text{C{{\\text{B}} Γ }}}   =  2.43  ±  0.06 eV, {{b}\\text{C{{\\text{B}}L}}}   =  0.64  ±  0.04 eV, {{b}\\text{VB}}   =  -0.59  ±  0.04 eV, and {{b}\\text{SO}}   =  -0.49  ±  0.05 eV). This indicates that Ge1-x Sn x behaves like a highly mismatched group IV alloy. The composition dependence of lattice constant shows negligible bowing (b a   =  -0.083 Å). Obtained results have been compared with available experimental data. The origin of band gap reduction and large bowing has been analyzed and conclusions have been drawn regarding the relationship between experimental and theoretical results. It is shown that due to the low DOS at the Γ-point, a significant filling of CB by electrons in the direct gap regime may easily take place. Therefore, the Burstein-Moss effect should be considered when comparing experimental data with theoretical predictions as has already been shown for other intrinsic n-type narrow gap semiconductors (e.g. InN).

  2. The hybridizations of cobalt 3 d bands with the electron band structure of the graphene/cobalt interface on a tungsten substrate

    NASA Astrophysics Data System (ADS)

    Hwang, Jinwoong; Hwang, Choongyu; Chung, Nak-Kwan; N'Diaye, A. D.; Schmid, A. K.; Denlinger, Jonathan

    2016-08-01

    The interface between graphene and a ferromagnetic substrate has attracted recent research interests due to its potential for spintronic applications. We report an angle-resolved photoemission spectroscopy study on the interface between graphene and cobalt epitaxially grown on a tungsten substrate. We find that the electron band structure of the interface exhibits clear discontinuities at the crossing points with cobalt 3 d bands. These observations indicate strong hybridizations between the electronic states in the interface and provide an important clue to understand the intriguing electromagnetic properties of the graphene/ferromagnet interface.

  3. Electronic band structure effects in monolayer, bilayer, and hybrid graphene structures

    NASA Astrophysics Data System (ADS)

    Puls, Conor

    Since its discovery in 2005, graphene has been the focus of intense theoretical and experimental study owing to its unique two-dimensional band structure and related electronic properties. In this thesis, we explore the electronic properties of graphene structures from several perspectives including the magnetoelectrical transport properties of monolayer graphene, gap engineering and measurements in bilayer graphene, and anomalous quantum oscillation in the monolayer-bilayer graphene hybrids. We also explored the device implications of our findings, and the application of some experimental techniques developed for the graphene work to the study of a complex oxide, Ca3Ru2O7, exhibiting properties of strongly correlated electrons. Graphene's high mobility and ballistic transport over device length scales, make it suitable for numerous applications. However, two big challenges remain in the way: maintaining high mobility in fabricated devices, and engineering a band gap to make graphene compatible with logical electronics and various optical devices. We address the first challenge by experimentally evaluating mobilities in scalable monolayer graphene-based field effect transistors (FETs) and dielectric-covered Hall bars. We find that the mobility is limited in these devices, and is roughly inversely proportional to doping. By considering interaction of graphene's Dirac fermions with local charged impurities at the interface between graphene and the top-gate dielectric, we find that Coulomb scattering is responsible for degraded mobility. Even in the cleanest devices, a band gap is still desirable for electronic applications of graphene. We address this challenge by probing the band structure of bilayer graphene, in which a field-tunable energy band gap has been theoretically proposed. We use planar tunneling spectroscopy of exfoliated bilayer graphene flakes demonstrate both measurement and control of the energy band gap. We find that both the Fermi level and

  4. The Role of Electron Carriers for Thermal Conductivity in Super-Earth Planets

    NASA Astrophysics Data System (ADS)

    Wentzcovitch, R. M.; Yuen, D. A.; Umemoto, K.; Allen, P. B.

    2005-12-01

    The recent discovery of an extrsolar planet, with 7.5 times the mass of the Earth, has prompted investigation of a new range of parameter space, 3 times hotter and 10 times higher pressure P than that of the Earth's mantle. We estimate thermal conductivity k(T) of silicates and oxides under these extreme planetary conditions. The radiative portion of k(T) is large above the mid-lower post-perovskite mantle, where T reaches 5000-6000K. This stabilizes large plumes because the temperature derivative of k(T) is positive. At T higher than 5000 K, free electron carriers are thermally activated with the population n(T) increasing as exp(-E*/2kT), where E* is the band gap energy of around 5 eV. Free carriers damp electromagnetic waves at frequencies below the plasma frequency, estimated to be close to 1 eV, shutting down radiative heat transport. We find that thermal electrons are highly mobile, with small effective masses and weak scattering. Therefore, they become dominant carriers of heat. We predict electrical resistivity as low as 1000 micro-ohm cm. The activated exponential T-dependence of k(T) will promote the growth of superplumes in the deep post-perovskite mantle of super-earth planets( van den Berg, Beebe, Yuen, Fall AGU abstract, 2005 )

  5. Dopant controlled trap-filling and conductivity enhancement in an electron-transport polymer

    SciTech Connect

    Higgins, Andrew E-mail: kahn@princeton.edu; Kahn, Antoine E-mail: kahn@princeton.edu; Mohapatra, Swagat K.; Barlow, Stephen; Marder, Seth R.

    2015-04-20

    Charge transport in organic semiconductors is often inhibited by the presence of tail states that extend into the band gap of a material and act as traps for charge carriers. This work demonstrates the passivation of acceptor tail states by solution processing of ultra-low concentrations of a strongly reducing air-stable organometallic dimer, the pentamethylrhodocene dimer, [RhCp*Cp]{sub 2}, into the electron transport polymer poly([N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide) -2,6-diyl]-alt-5,5′-(2,2′-bithiophene)), P(NDI{sub 2}OD-T{sub 2}). Variable-temperature current-voltage measurements of n-doped P(NDI{sub 2}OD-T{sub 2}) are presented with doping concentration varied through two orders of magnitude. Systematic variation of the doping parameter is shown to lower the activation energy for hopping transport and enhance film conductivity and electron mobility.

  6. Electronic structure and conductivity of nanocomposite metal (Au,Ag,Cu,Mo)-containing amorphous carbon films

    SciTech Connect

    Endrino, Jose L.; Horwat, David; Gago, Raul; Andersson, Joakim; Liu, Y.S.; Guo, Jinghua; Anders, Andre

    2008-05-14

    In this work, we study the influence of the incorporation of different metals (Me = Au, Ag, Cu, Mo) on the electronic structure of amorphous carbon (a-C:Me) films. The films were produced at room temperature using a novel pulsed dual-cathode arc deposition technique. Compositional analysis was performed with secondary neutral mass spectroscopy whereas X-ray diffraction was used to identify the formation of metal nanoclusters in the carbon matrix. The metal content incorporated in the nanocomposite films induces a drastic increase in the conductivity, in parallel with a decrease in the band gap corrected from Urbach energy. The electronic structure as a function of the Me content has been monitored by x-ray absorption near edge structure (XANES) at the C K-edge. XANES showed that the C host matrix has a dominant graphitic character and that it is not affected significantly by the incorporation of metal impurities, except for the case of Mo, where the modifications in the lineshape spectra indicated the formation of a carbide phase. Subtle modifications of the spectral lineshape are discussed in terms of nanocomposite formation.

  7. Centimeter-long electron transport in marine sediments via conductive minerals.

    PubMed

    Malvankar, Nikhil S; King, Gary M; Lovley, Derek R

    2015-02-01

    Centimeter-long electron conduction through marine sediments, in which electrons derived from sulfide in anoxic sediments are transported to oxygen in surficial sediments, may have an important influence on sediment geochemistry. Filamentous bacteria have been proposed to mediate the electron transport, but the filament conductivity could not be verified and other mechanisms are possible. Surprisingly, previous investigations have never actually measured the sediment conductivity or its basic physical properties. Here we report direct measurements that demonstrate centimeter-long electron flow through marine sediments, with conductivities sufficient to account for previously estimated electron fluxes. Conductivity was lost for oxidized sediments, which contrasts with the previously described increase in the conductivity of microbial biofilms upon oxidation. Adding pyrite to the sediments significantly enhanced the conductivity. These results suggest that the role of conductive minerals, which are more commonly found in sediments than centimeter-long microbial filaments, need to be considered when modeling marine sediment biogeochemistry.

  8. Centimeter-long electron transport in marine sediments via conductive minerals

    PubMed Central

    Malvankar, Nikhil S; King, Gary M; Lovley, Derek R

    2015-01-01

    Centimeter-long electron conduction through marine sediments, in which electrons derived from sulfide in anoxic sediments are transported to oxygen in surficial sediments, may have an important influence on sediment geochemistry. Filamentous bacteria have been proposed to mediate the electron transport, but the filament conductivity could not be verified and other mechanisms are possible. Surprisingly, previous investigations have never actually measured the sediment conductivity or its basic physical properties. Here we report direct measurements that demonstrate centimeter-long electron flow through marine sediments, with conductivities sufficient to account for previously estimated electron fluxes. Conductivity was lost for oxidized sediments, which contrasts with the previously described increase in the conductivity of microbial biofilms upon oxidation. Adding pyrite to the sediments significantly enhanced the conductivity. These results suggest that the role of conductive minerals, which are more commonly found in sediments than centimeter-long microbial filaments, need to be considered when modeling marine sediment biogeochemistry. PMID:25050525

  9. Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap

    NASA Astrophysics Data System (ADS)

    Ji, Yang; Shan, Dan; Qian, Mingqing; Xu, Jun; Li, Wei; Chen, Kunji

    2016-10-01

    High conductive phosphorus-doped nano-crystalline Si embedded in Silicon-Carbide (SiC) host matrix (nc-Si:SiC) films were obtained by thermally annealing doped amorphous Si-rich SiC materials. It was found that the room conductivity is increased significantly accompanying with the increase of doping concentrations as well as the enhanced crystallizations. The conductivity can be as high as 630 S/cm for samples with the optical band gap around 2.7 eV, while the carrier mobility is about 17.9 cm2/ V.s. Temperature-dependent conductivity and mobility measurements were performed which suggested that the carrier transport process is strongly affected by both the grain boundaries and the doping concentrations.

  10. Near band-gap electronics properties and luminescence mechanisms of boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Museur, L.; Kanaev, A.

    2015-08-01

    The deep ultraviolet luminescence (hν ≥ 5 eV) of multiwall boron nitride nanotubes (BNNTs) is studied with time- and energy-resolved photoluminescence spectroscopy. Two luminescence bands are observed at 5.35 and 5.54 eV. Both emissions undergo a large blue shift of several tens of meV with a linear slope Δ E l u m / Δ E e x c < 1 as the excitation energy Eexc increases. When E e x c ≥ 5.8 eV, the spectral band positions become fixed, which marks the transition between the excitation of donor-acceptor pairs and creation of free charge carriers. We assign the 5.35 eV band to quasi donor-acceptor pair transitions and the band at 5.54 eV to free-bound transitions. Boron and nitrogen atoms distributed along characteristic defect lines in BNNTs should be involved in the luminescence process. The presented results permit a revision of previous assignments of electronic transitions in BNNTs.

  11. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

    NASA Astrophysics Data System (ADS)

    Wickramaratne, Darshana; Zahid, Ferdows; Lake, Roger K.

    2015-08-01

    The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a "Mexican hat" or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III-VI materials and Bi2Se3 is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

  12. Spin-resolved electronic band structure of fct-cobalt (100) (abstract)

    NASA Astrophysics Data System (ADS)

    Schneider, C. M.; Schuster, P.; Hammond, M.; Ebert, H.; Noffke, J.; Kirschner, J.

    1991-04-01

    The spin-polarized electronic structure of the fcc high-temperature modification of cobalt has not been investigated yet, because of the experimental difficulties of photoemission at high temperature. We stabilized fcc Co by molecular-beam epitaxy on a Cu(100) substrate with large, atomically flat terasses (0.5-1 μm wide) as revealed by STM. The structure of the layers was studied by LEED and MEED, showing a tetragonal distortion of the fcc lattice perpendicular to the (100) surface plane. The dispersion of the exchange split bands perpendicular to the surface was determined for a 5-monolayer-thick sample (tetragonal distortion on average 4%-5%) by spin- and momentum-resolved photoemission. The results are compared to two relativistic spin-polarized band-structure calculations for fcc cobalt. Somewhat surprisingly, even a 5-ML-thick sample shows three-dimensional dispersion in good agreement with the calculations, as far as the average exchange splitting (1.2±0.2 eV), and the symmetry character of the bands is concerned. There are, however, some systematic deviations of minority bands near the Fermi energy which are attributed to the tetragonal compression.

  13. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

    SciTech Connect

    Wickramaratne, Darshana E-mail: rlake@ece.ucr.edu; Lake, Roger K. E-mail: rlake@ece.ucr.edu; Zahid, Ferdows

    2015-08-21

    The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a “Mexican hat” or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III–VI materials GaS, GaSe, InS, InSe, for Bi{sub 2}Se{sub 3}, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III–VI materials and Bi{sub 2}Se{sub 3} is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

  14. Electronic and Magnetic Properties of Mn_xGa_1-xAs: Role of Mn= Defect Bands

    NASA Astrophysics Data System (ADS)

    Zhao, Yu-Jun; Geng, W. T.; Freeman, A. J.

    2001-03-01

    A detailed description of the electronic structure is crucial for underst anding Mn_xGa_1-xAs, a potential semiconductor spin-device materia l. In this work, a wide range of Mn concentration for Mn_xGa_1-xAs (x=3D3.125%, 6.25%, 12.5%, 25.0%, 50.0%) is studied by first-princip les full-potential linearized augmented plane wave (FLAPW)(Wimme r, Krakauer, Weinert, and Freeman, PRB 24), 864 (1981). calculation s with GGA. At all concentrations studied, the ferromagnetic (FM) state i s lower in energy than the paramagnetic (PM) and antiferromagnetic (AFM) states, confirming that Mn atoms stay magnetic with well localized magnet ic moments of 4.00 μ_B. The calculated band structure shows that Mn d oping also forms defect bands, and makes (Ga,Mn)As p-type conducting by p roviding holes. Furthermore, an s-d population inversion is found in the Mn electronic configuration, which results from the strong Mn p-d mixing. The induced As moments are substantial (about -0.15μB per Mn atom, and almost independent of x) -- in accord with a recent observed negati ve As magnetic circular dichroism (MCD) signal.(B. Beschoten, et al), Phys. Rev. Lett. 83, 3073 (1999).

  15. Electronically conductive polymer binder for lithium-ion battery electrode

    DOEpatents

    Liu, Gao; Xun, Shidi; Battaglia, Vincent S; Zheng, Honghe

    2014-10-07

    A family of carboxylic acid group containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

  16. Electronically conductive polymer binder for lithium-ion battery electrode

    DOEpatents

    Liu, Gao; Xun, Shidi; Battaglia, Vincent S.; Zheng, Honghe

    2017-05-16

    A family of carboxylic acid group containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

  17. Promising electron mobility and high thermal conductivity in Sc2CT2 (T = F, OH) MXenes

    NASA Astrophysics Data System (ADS)

    Zha, Xian-Hu; Zhou, Jie; Zhou, Yuhong; Huang, Qing; He, Jian; Francisco, Joseph S.; Luo, Kan; Du, Shiyu

    2016-03-01

    is determined to be 173 W m-1 K-1 (107 W m-1 K-1). Based on their excellent electron mobilities and high thermal conductivities, both of the Sc2CT2 (T = F, OH) MXenes could be promising candidate materials for the next generation of electronic devices. Electronic supplementary information (ESI) available: Linear fitting functions of the CBM of Sc2CT2 (T = F, OH) under uniaxial strain; the electronic energy bands based on primitive cells; the details of estimating carrier effective mass and the robustness of our predicted electron mobilities. See DOI: 10.1039/c5nr08639f

  18. Probing radiation damage by alternated current conductivity as a method to characterize electron hopping conduction in DNA molecules

    SciTech Connect

    Gomes, Paulo J.; Coelho, Margarida; Antonio Ribeiro, Paulo; Raposo, Maria; Dionisio, Madalena

    2012-09-17

    Analysis of AC electrical conductivity of deoxyribonucleic acid (DNA) thin films, irradiated with ultraviolet (UV) light, revealed that electrical conduction arises from DNA chain electron hopping between base-pairs and phosphate groups. The hopping distance calculated from correlated barrier hopping model equals the distance between DNA base-pairs, which is consistent with the loss of conductivity with irradiation time arising from a decrease in phosphates groups. In the high frequency regime, at a given frequency, real part of conductivity strongly depends on irradiation time particularly for low dose levels suggesting the use of DNA based films for UV radiation sensors.

  19. Broad-band conductivity and dielectric spectroscopy of composites of multiwalled carbon nanotubes and poly(ethylene terephthalate) around their low percolation threshold.

    PubMed

    Nuzhnyy, D; Savinov, M; Bovtun, V; Kempa, M; Petzelt, J; Mayoral, B; McNally, T

    2013-02-08

    Composites of multiwalled carbon nanotubes with poly(ethylene terephthalate) (PET-MWCNT) with up to 3 vol% MWCNTs were prepared and characterized by broad-band AC conductivity and dielectric spectroscopy up to the infrared range using several techniques. A very low electrical percolation threshold of 0.07 vol% MWCNTs was revealed from the low-frequency conductivity plateau as well as from DC conductivity, whose values show the same critical power dependence on MWCNT concentration with the exponent t = 4.3. Above the plateau, the AC conductivity increases with frequency up to the THz range, where it becomes overlapped with the absorption of vibrational modes. The temperature dependence down to ~5 K has shown semiconductor behaviour with a concentration-independent but weakly temperature-dependent small activation energy of ~3 meV. The behaviour is compatible with the previously suggested fluctuation-induced tunnelling conductivity model through a thin (~1 nm) polymer contact layer among the adjacent MWCNTs within percolated clusters. At higher frequencies, deviations from the simple universal conductivity behaviour are observed, indicating some distribution of energy barriers for an electron hopping mechanism.

  20. Advances in Normal Conducting Accelerator Technology from the X-Band Linear Collider Program

    SciTech Connect

    Adolphsen, C; /SLAC

    2005-06-22

    In the mid-1990's, groups at SLAC and KEK began dedicated development of X-band (11.4 GHz) rf technology for a next generation, TeV-scale linear collider. The choice of a relatively high frequency, four times that of the SLAC 50 GeV Linac, was motivated by the cost benefits of having lower rf energy per pulse (hence fewer rf sources) and reasonable efficiencies at high gradients (hence shorter linacs). To realize such savings, however, requires operation at gradients and peak powers much higher than that hitherto achieved. During the past twelve years, these challenges were met through innovations on several fronts. This paper reviews these achievements, which include developments in the generation and transport of high power rf, and new insights into high gradient limitations.

  1. Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases

    NASA Astrophysics Data System (ADS)

    Xu, Sheng; Shen, Xiao; Hallman, Kent A.; Haglund, Richard F.; Pantelides, Sokrates T.

    2017-03-01

    The debate about whether the insulating phases of vanadium dioxide (V O2 ) can be described by band theory or whether it requires a theory of strong electron correlations remains unresolved even after decades of research. Energy-band calculations using hybrid exchange functionals or including self-energy corrections account for the insulating or metallic nature of different phases but have not yet successfully accounted for the observed magnetic orderings. Strongly correlated theories have had limited quantitative success. Here we report that by using hard pseudopotentials and an optimized hybrid exchange functional, the energy gaps and magnetic orderings of both monoclinic V O2 phases and the metallic nature of the high-temperature rutile phase are consistent with available experimental data, obviating an explicit role for strong correlations. We also identify a potential candidate for the newly found metallic monoclinic phase.

  2. High-throughput combinatorial database of electronic band structures for inorganic scintillator materials.

    PubMed

    Setyawan, Wahyu; Gaume, Romain M; Lam, Stephanie; Feigelson, Robert S; Curtarolo, Stefano

    2011-07-11

    For the purpose of creating a database of electronic structures of all the known inorganic compounds, we have developed a computational framework based on high-throughput ab initio calculations (AFLOW) and an online repository (www.aflowlib.org). In this article, we report the first step of this task: the calculation of band structures for 7439 compounds intended for the research of scintillator materials for γ-ray radiation detection. Data-mining is performed to select the candidates from 193,456 compounds compiled in the Inorganic Crystal Structure Database. Light yield and scintillation nonproportionality are predicted based on semiempirical band gaps and effective masses. We present a list of materials, potentially bright and proportional, and focus on those exhibiting small effective masses and effective mass ratios.

  3. Vibrational structure of defect luminescence bands in GaN from electronic structure calculations

    NASA Astrophysics Data System (ADS)

    Alkauskas, Audrius; van de Walle, Chris G.

    2012-02-01

    Optical methods are among the most powerful to characterize defects in materials. The study of optical signatures based on state-of-the-art electronic structure methods is therefore very important. In this work we investigate the vibrational structure of luminescence bands pertaining to deep defect levels in GaN. Since luminescence lineshapes depend sensitively on defect geometries and vibrational frequencies, these should be described accurately. The latter is achieved through the use of hybrid density functionals. Both quasi-localized and bulk phonons are included in our description. In the case of transitions accompanied by very large lattice relaxations, anharmonic effects become sizeable, and these are also accounted for. For the defects studied a very good agreement with available experimental data is achieved. For instance, in the case of wide luminescence bands the resulting line widths are within 0.05 eV of the experimental values. This work was supported by the Swiss NSF and by NSF.

  4. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

    SciTech Connect

    Yastrubchak, O.; Sadowski, J.; Domagala, J. Z.; Andrearczyk, T.; Wosinski, T.

    2014-08-18

    Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

  5. Optical and electronic properties of delafossite CuBO{sub 2}p-type transparent conducting oxide

    SciTech Connect

    Ruttanapun, Chesta E-mail: krchesta@kmitl.ac.th

    2013-09-21

    CuBO{sub 2} delafossite was prepared by solid state reaction and calcined/sintered at 1005 °C. The optical properties of this p-type transparent conducting oxide were investigated. Its crystal structure, morphology, composition, oxygen decomposition, and optical and electronic properties were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, thermal gravimetric analysis (TGA), ultraviolet-visible-near-infrared (UV-VIS-NIR) and fluorescence spectroscopies, Seebeck coefficient, and electrical conductivity measurements. CuBO{sub 2} delafossite possesses a hexagonal space group R3{sup ¯}m. TGA indicated a weight loss of 10%, which was attributed to excess oxygen. The positive Seebeck coefficient confirmed p-type behavior. Emission at 355 nm indicated a direct band type transition, and the UV-VIS-NIR spectrum indicated an optical direct gap of 3.6 eV. Activation energies for carrier production and electrical conduction were 0.147 and 0.58 eV, respectively, indicating the thermal activation of carriers. CuBO{sub 2} delafossite is a p-type transparent conducting oxide with a wide band gap and may have potential in industrial p-type electrodes.

  6. Effects of an additional conduction band on the singlet-antiferromagnet competition in the periodic Anderson model

    DOE PAGES

    Hu, Wenjian; Scalettar, Richard T.; Huang, Edwin W.; ...

    2017-06-12

    The competition between antiferromagnetic (AF) order and singlet formation is a central phenomenon of the Kondo and periodic Anderson Hamiltonians and of the heavy fermion materials they describe. In this paper, we explore the effects of an additional conduction band on magnetism in these models, and, specifically, on changes in the AF-singlet quantum critical point (QCP) and the one particle and spin spectral functions. To understand the magnetic phase transition qualitatively, we first carry out a self-consistent mean field theory (MFT). The basic conclusion is that, at half filling, the coupling to the additional band stabilizes the AF phase tomore » larger f d hybridization V in the PAM. We also explore the possibility of competing ferromagnetic phases when this conduction band is doped away from half filling. Here, we next employ quantum Monte Carlo (QMC) which, in combination with finite size scaling, allows us to evaluate the position of the QCP using an exact treatment of the interactions. This approach confirms the stabilization of AF order, which occurs through an enhancement of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. QMC results for the spectral function A (q,ω) and dynamic spin structure factor χ (q,ω) yield additional insight into the AF-singlet competition and the low temperature phases.« less

  7. Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

    SciTech Connect

    Vos, M.; Marmitt, G. G.; Finkelstein, Y.; Moreh, R.

    2015-09-14

    Reflection electron energy loss spectra from some insulating materials (CaCO{sub 3}, Li{sub 2}CO{sub 3}, and SiO{sub 2}) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO{sub 2}, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E{sub gap}){sup 1.5}. For CaCO{sub 3}, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li{sub 2}CO{sub 3} (7.5 eV) is the first experimental estimate.

  8. Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

    NASA Astrophysics Data System (ADS)

    Vos, M.; Marmitt, G. G.; Finkelstein, Y.; Moreh, R.

    2015-09-01

    Reflection electron energy loss spectra from some insulating materials (CaCO3, Li2CO3, and SiO2) taken at relatively high incoming electron energies (5-40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO2, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E - Egap)1.5. For CaCO3, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li2CO3 (7.5 eV) is the first experimental estimate.

  9. Isolated energy level in the band gap of Yb2Si2O7 identified by electron energy-loss spectroscopy

    NASA Astrophysics Data System (ADS)

    Ogawa, Takafumi; Kobayashi, Shunsuke; Wada, Masashi; Fisher, Craig A. J.; Kuwabara, Akihide; Kato, Takeharu; Yoshiya, Masato; Kitaoka, Satoshi; Moriwake, Hiroki

    2016-05-01

    We report the detection of an isolated energy level in the band gap of crystalline Yb2Si2O7 in the low-energy-loss region of its electron energy-loss (EEL) spectrum, obtained using a monochromated scanning transmission electron microscope. The experimental results are corroborated by first-principles calculations of the theoretical EEL spectrum. The calculations reveal that unoccupied Yb 4 f orbitals constitute an isolated energy level about 1 eV below the conduction band minimum (CBM), resulting in a terrace about 1 eV wide at the band edge of the EEL spectrum. In the case of Yb2O3 , no band edge terrace is present because the unoccupied f level lies just below the CBM. We also examined optical absorption properties of Yb2Si2O7 using UV-vis diffuse reflectance spectroscopy, which shows that the isolated energy level could not be detected in the band edge of the obtained absorbance spectrum. These findings demonstrate the utility of low-loss EEL spectroscopy with high energy resolution for probing semilocalized electronic features.

  10. Implementation of electronic crosstalk correction for terra MODIS PV LWIR bands

    NASA Astrophysics Data System (ADS)

    Geng, Xu; Madhavan, Sriharsha; Chen, Na; Xiong, Xiaoxiong

    2015-09-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the fleet of NASA's Earth Observing Systems (EOS) in space. Terra MODIS has completed 15 years of operation far exceeding its design lifetime of 6 years. The MODIS Level 1B (L1B) processing is the first in the process chain for deriving various higher level science products. These products are used mainly in understanding the geophysical changes occurring in the Earth's land, ocean, and atmosphere. The L1B code is designed to carefully calibrate the responses of all the detectors of the 36 spectral bands of MODIS and provide accurate L1B radiances (also reflectances in the case of Reflective Solar Bands). To fulfill this purpose, Look Up Tables (LUTs), that contain calibration coefficients derived from both on-board calibrators and Earth-view characterized responses, are used in the L1B processing. In this paper, we present the implementation mechanism of the electronic crosstalk correction in the Photo Voltaic (PV) Long Wave InfraRed (LWIR) bands (Bands 27-30). The crosstalk correction involves two vital components. First, a crosstalk correction modular is implemented in the L1B code to correct the on-board Blackbody and Earth-View (EV) digital number (dn) responses using a linear correction model. Second, the correction coefficients, derived from the EV observations, are supplied in the form of LUTs. Further, the LUTs contain time stamps reflecting to the change in the coefficients assessed using the Noise Equivalent difference Temperature (NEdT) trending. With the algorithms applied in the MODIS L1B processing it is demonstrated that these corrections indeed restore the radiometric balance for each of the affected bands and substantially reduce the striping noise in the processed images.

  11. Electron momentum density, band structure, and structural properties of SrS

    SciTech Connect

    Sharma, G.; Munjal, N.; Vyas, V.; Kumar, R.; Sharma, B. K.; Joshi, K. B.

    2013-10-15

    The electron momentum density, the electronic band structure, and the structural properties of SrS are presented in this paper. The isotropic Compton profile, anisotropies in the directional Compton profiles, the electronic band structure and density of states are calculated using the ab initio periodic linear combination of atomic orbitals method with the CRYSTAL06 code. Structural parameters of SrS-lattice constants and bulk moduli in the B1 and B2 phases-are computed together with the transition pressure. The computed parameters are well in agreement with earlier investigations. To compare the calculated isotropic Compton profile, measurement on polycrystalline SrS is performed using 5Ci-{sup 241}Am Compton spectrometer. Additionally, charge transfer is studied by means of the Compton profiles computed from the ionic model. The nature of bonding in the isovalent SrS and SrO compounds is compared on the basis of equal-valenceelectron-density profiles and the bonding in SrS is found to be more covalent than in SrO.

  12. Magnetic excitations versus electronic bands on twinned YBa_2Cu_3O_7-δ superconductors

    NASA Astrophysics Data System (ADS)

    Li, Jun; Tam, Ka Ming; Lin, Hai-Qing

    2002-03-01

    Connection between the magnetic excitations detected by the inelastic neutron-scattering (INS) [1,2,3] and the angle-resolved photoemission (ARPES) measured electronic structures [4] on the high temperature YBa_2Cu_3O_7-δ superconductors is still an open question. Direct use of the ARPES derived bonding and antibonding quasiparticle bands will produce an unphysical incommensurability (ICM) of δ =0.5π in the INS measured ICM peak positions Q^*=(π ,π ± δ ). We point out that the slave-boson approach [5] provides a systematic way of relating these two kinds of experiments. At nearly optimal doping of x=15%, the ARPES derived bands on untwinned YBa_2Cu_3O_7-δ are taken as a starting point. The slave-boson renormalized fermion bands are less curved around the Brillouin zone diagonals so that they are able to induce an incommensurability of δ =0.2π in the odd spin excitation channel with neutron energy ω =37.5meV as well as resonance peak with neutron frequency ω =47.3 meV . These magnetic spectra are in good agreement with the INS experiments on nearly optimally doped twinned YBa_2twinning is averaged out due to the equal populations of the two twin domains. New factor should be taken into account to explain the INS spectra of untwinned samples [3]. In the underdoped region (x=10%), no ARPES derived band is presently available. A rigid band approximations by using the same ARPES bands cannot give consistent INS spectra [1] for less doped YBaslave-boson approach is used. This is due to the sensitive doping dependence of electronic structures of high-Tc cuprates. References [1] H. A. Mook et al. , Nature 395, 580 (1998). [2] P. Bourges et al. , Science 288, 1234 (2000). [3] H. A. Mook et al. , Nature 404, 729 (2000). [4] M.C.Schabel et al., Phys. Rev. B 57, 6090 (1998). [5] J. Brinckmann and P. A. Lee, Phys. Rev. Lett. 82, 2915(1999).

  13. Electronically conductive polymer binder for lithium-ion battery electrode

    DOEpatents

    Liu, Gao; Battaglia, Vincent S.; Park, Sang -Jae

    2015-10-06

    A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

  14. Electronically conductive polymer binder for lithium-ion battery electrode

    DOEpatents

    Liu, Gao; Xun, Shidi; Battaglia, Vincent S.; Zheng, Honghe; Wu, Mingyan

    2015-07-07

    A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

  15. Electronically conductive polymer binder for lithium-ion battery electrode

    DOEpatents

    Liu, Gao; Xun, Shidi; Battaglia, Vincent S.; Zheng, Honghe; Wu, Mingyan

    2017-08-01

    A family of carboxylic acid groups containing fluorene/fluorenon copolymers is disclosed as binders of silicon particles in the fabrication of negative electrodes for use with lithium ion batteries. Triethyleneoxide side chains provide improved adhesion to materials such as, graphite, silicon, silicon alloy, tin, tin alloy. These binders enable the use of silicon as an electrode material as they significantly improve the cycle-ability of silicon by preventing electrode degradation over time. In particular, these polymers, which become conductive on first charge, bind to the silicon particles of the electrode, are flexible so as to better accommodate the expansion and contraction of the electrode during charge/discharge, and being conductive promote the flow battery current.

  16. Conducting Electronic Polymers by Non-Redox Processes

    DTIC Science & Technology

    1988-12-31

    systematic detailed observation of competing crystalline phases in a doped polymer. The multiple structures of the erneraldine form of polyaniline , together...states and other properties has been determined. Class I of the emeraldine form of polyaniline consists of materials prepared in the conducting, doped ...tosylic acid doped polyaniline ad polyethyleneoxide. We found that a 50:50 blend of tosylic acid doped polyaniline:PEO could form a homogeneous film

  17. The Connoisseurship of Conducting: A Qualitative Study of Exemplary Wind Band Conductors

    ERIC Educational Resources Information Center

    Barry, Nancy; Henry, Daniel

    2015-01-01

    This study aimed to gain an in-depth perspective through examining how the conducting pedagogy of three selected exemplary high school and college instrumental music conductors function within the context of an actual rehearsal. A typical rehearsal was video recorded, followed by a "think-aloud" session in which the conductor viewed the…

  18. Analysis and Design of Ultra Wide-Band and High-Power Microwave Pulse Interactions With Electronic Circuits and Systems

    DTIC Science & Technology

    2007-02-28

    SUBJECT TERMS Electromagnetic interference. Ultrawide- band pulses . High-power microwave pulses . Interactions with electronic circuits and systems. 16...Eric Michielssen Prof. V. V. Liepa Report Period: June 15, 2001 to August 31, 2006 20070516067 PROJECT SUMMARY Ultra wide- band ( UWB ) environments and...or UWB pulses from large targets (aircraft, vehicles, boxes, etc.) with penetrating wires, apertures, cracks, doors, and antennas. (2). Digital

  19. Conductivity and optical band gaps of polyethylene oxide doped with Li{sub 2}SO{sub 4} salt

    SciTech Connect

    Chapi, Sharanappa Raghu, S. Subramanya, K. Archana, K. Mini, V. Devendrappa, H.

    2014-04-24

    The conductivity and optical properties of Li{sub 2}SO{sub 4} doped polyethylene oxide (PEO) films were studied. The polymer electrolyte films are prepared using solution casting technique. The material phase change was confirmed by X-ray diffraction (XRD) technique. Optical absorption study was conducted using UV- Vis. Spectroscopy in the wavelength range 190–1100nm on pure and doped PEO films. The direct and indirect optical band gaps were found decreased from 5.81–4.51eV and 4.84–3.43eV respectively with increasing the Li{sub 2}SO{sub 4}. The conductivity found to increases with increasing the dopant concentration due to strong hopping mechanism at room temperature.

  20. Transient absorption spectroscopy of ultra-low band gap polymers for organic electronic applications

    NASA Astrophysics Data System (ADS)

    Fallon, Kealan J.; Dimitrov, Stoichko; Durrant, James; Bronstein, Hugo; Clarke, Tracey M.

    2016-09-01

    In this paper two extremely narrow band-gap polymers, based on naturally occurring indigo with high thin film crystallinity, have been examined using transient absorption spectroscopy. This was done in order to assess their charge photogeneration and recombination characteristics in blends with PC71BM. Two charge photogeneration mechanisms are found to be operating, depending on which component of the blend is photoexcited. Despite virtually isoenergetic LUMO levels, photoexcitation of the polymer causes standard electron transfer, albeit with a relatively low efficiency of 17 %. Photoexcitation of the fullerene, however, produces an exceptionally slow nanosecond timescale hole transfer.

  1. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

    SciTech Connect

    Marquez Velasco, J.; Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A.; Raptis, Y. S.

    2013-11-18

    Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu Γ{sup ¯}K{sup ¯} direction in k-space, attributed to the presence of ∼4° twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

  2. Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation

    PubMed Central

    Chirayath, V. A.; Callewaert, V.; Fairchild, A. J.; Chrysler, M. D.; Gladen, R. W.; Mcdonald, A. D.; Imam, S. K.; Shastry, K.; Koymen, A. R.; Saniz, R.; Barbiellini, B.; Rajeshwar, K.; Partoens, B.; Weiss, A. H.

    2017-01-01

    Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (<1.25 eV) to create valence-band holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition. PMID:28703225

  3. Wide-band current preamplifier for conductance measurements with large input capacitance

    NASA Astrophysics Data System (ADS)

    Kretinin, Andrey V.; Chung, Yunchul

    2012-08-01

    A wide-band current preamplifier based on a composite operational amplifier is proposed. It has been shown that the bandwidth of the preamplifier can be significantly increased by enhancing the effective open-loop gain. The described 107 V/A current gain preamplifier had the bandwidth of about 100 kHz with the 1 nF input shunt capacitance. The measured preamplifier current noise was 46 fA/sqrtHz at 1 kHz, close to the design noise minimum. The voltage noise was found to be about 2.9 nV/sqrtHz at 1 kHz, which is in a good agreement with the value expected for the particular operational amplifier used in the input stage. By analysing the total produced noise we found that the optimal frequency range suitable for the fast lock-in measurements is from 1 kHz to 2 kHz. To obtain the same signal-to-noise ratio, the reported preamplifier requires ˜10% of the integration time needed in measurements made with a conventional preamplifier.

  4. Ethical considerations in the conduct of electronic surveillance research.

    PubMed

    Bharucha, Ashok J; London, Alex John; Barnard, David; Wactlar, Howard; Dew, Mary Amanda; Reynolds, Charles F

    2006-01-01

    The extant clinical literature indicates profound problems in the assessment, monitoring, and documentation of care in long-term care facilities. The lack of adequate resources to accommodate higher staff-to-resident ratios adds additional urgency to the goal of identifying more cost-effective mechanisms to provide care oversight. The ever expanding array of electronic monitoring technologies in the clinical research arena demands a conceptual and pragmatic framework for the resolution of ethical tensions inherent in the use of such innovative tools. CareMedia is a project that explores the utility of video, audio and sensor technologies as a continuous real-time assessment and outcomes measurement tool. In this paper, the authors describe the seminal ethical challenges encountered during the implementation phase of this project, namely privacy and confidentiality protection, and the strategies employed to resolve the ethical tensions by applying principles of the interest theory of rights.

  5. Design of an L-band normally conducting RF gun cavity for high peak and average RF power

    NASA Astrophysics Data System (ADS)

    Paramonov, V.; Philipp, S.; Rybakov, I.; Skassyrskaya, A.; Stephan, F.

    2017-05-01

    To provide high quality electron bunches for linear accelerators used in free electron lasers and particle colliders, RF gun cavities operate with extreme electric fields, resulting in a high pulsed RF power. The main L-band superconducting linacs of such facilities also require a long RF pulse length, resulting in a high average dissipated RF power in the gun cavity. The newly developed cavity based on the proven advantages of the existing DESY RF gun cavities, underwent significant changes. The shape of the cells is optimized to reduce the maximal surface electric field and RF loss power. Furthermore, the cavity is equipped with an RF probe to measure the field amplitude and phase. The elaborated cooling circuit design results in a lower temperature rise on the cavity RF surface and permits higher dissipated RF power. The paper presents the main solutions and results of the cavity design.

  6. Mechanism of Li+/electron conductivity in rutile and anatase TiO2 nanoparticles

    SciTech Connect

    Sushko, Maria L.; Rosso, Kevin M.; Liu, Jun

    2010-11-08

    Concurrent Li-ion and electron conductivity in rutile and anatase TiO2 nanoparticles was studied using multiscale simulations. We show that charge transport in titania nanoparticles is determined by the competition of charge redistribution towards the particle boundaries and constant Li+ and electron fluxes. In nanoparticles smaller than the Debye length the constant flux prevails and the conductivity has a dual ionic and electronic character, while for larger nanoparticles conductivity becomes predominately ionic. Simulations revealed that the temperature dependence of Li-ion conductivity in anatase is very weak, while in rutile the conductivity decreases with temperature in small nanoparticles and increases in large nanoparticles.

  7. Local Bonding Analysis of the Valence and Conduction Band Features of TiO2

    DTIC Science & Technology

    2007-01-01

    nanocrystalline samples tenuous at best. Hence, the phase of the unannealed TiO2 films cannot conclusively be identified as either anatase or rutile...reveals the local physical origin of the electronic structure in nanocrystalline films . TiO2 has further been chosen as a natural starting point to...thickness ratio is 2:1 for TiO2 . This assump- tion has been verified by XPS studies of the substrate Si 2p core-level spectra with film thickness. The

  8. Soft capacitor fibers using conductive polymers for electronic textiles

    NASA Astrophysics Data System (ADS)

    Gu, Jian Feng; Gorgutsa, Stephan; Skorobogatiy, Maksim

    2010-11-01

    A novel, highly flexible, conductive polymer-based fiber with high electric capacitance is reported. In its cross section the fiber features a periodic sequence of hundreds of conductive and isolating plastic layers positioned around metallic electrodes. The fiber is fabricated using the fiber drawing method, where a multi-material macroscopic preform is drawn into a sub-millimeter capacitor fiber in a single fabrication step. Several kilometers of fibers can be obtained from a single preform with fiber diameters ranging between 500 and 1000 µm. A typical measured capacitance of our fibers is 60-100 nF m-1 and it is independent of the fiber diameter. Analysis of the fiber frequency response shows that in its simplest interrogation mode the capacitor fiber has a transverse resistance of 5 kΩ m L-1, which is inversely proportional to the fiber length L and is independent of the fiber diameter. Softness of the fiber materials, the absence of liquid electrolyte in the fiber structure, ease of scalability to large production volumes and high capacitance of our fibers make them interesting for various smart textile applications ranging from distributed sensing to energy storage.

  9. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Suppression of Anti-resonant Effect in Presence of Band Overlap

    NASA Astrophysics Data System (ADS)

    Xiong, Gang

    2010-07-01

    By exact resolution of coupled ideal chains connecting an extra side site, we show that the so-called "anti-resonant effect" is suppressed when the electron energy is inside the overlap region of extended bands of the ideal tight-binding chains. When the electronic energy is outside the band overlap region, the existence of "anti-resonant effect" is tuned by details of local connectivity around the extra side site and can be suppressed by introduction of magnetic flux.

  10. Two-temperature models of old supernova remnants with ion and electron thermal conduction

    NASA Technical Reports Server (NTRS)

    Cui, Wei; Cox, Donald P.

    1992-01-01

    To investigate the potential effects thermal conduction may have on the evolution of old supernova remnants, we present the results of 1D (spherically symmetric) numerical simulations of a remnant in a homogeneous interstellar medium for four different cases: (1) without thermal conduction; (2) with both electron and ion thermal conduction assuming equal temperatures; (3) with electron thermal conduction only, following electron and ion temperatures separately; and (4) with both electron and ion thermal conduction following separate temperatures. We followed the entire evolution until the completion of the remnant bubble collapse. Our most significant result is that in remnant evolution studies concerned principally with either the shell or bubble evolution at late times, reasonable results are obtained with single-temperature models. When the electron and ion temperatures are followed separately, however, ion thermal conduction cannot safely be ignored.

  11. A research of W-band folded waveguide traveling wave tube with elliptical sheet electron beam

    SciTech Connect

    Guo Guo; Wei Yanyu; Yue Lingna; Gong Yubin; Zhao Guoqing; Huang Minzhi; Tang Tao; Wang Wenxiang

    2012-09-15

    Folded waveguide (FWG) traveling wave tube (TWT), which shows advantages in high power capacity, moderate bandwidth, and low-cost fabrication, has become the focus of vacuum electronics recently. Sheet electron beam devices are better suited for producing radiation sources with large power in millimeter wave spectrum due to their characteristics of relatively low space charge fields and large transport current. A FWG TWT with elliptical sheet beam working in W-band is presented in this paper, with the analysis of its dispersion characteristics, coupling impedance, transmission properties, and interaction characteristics. A comparison is also made with the traditional FWG TWT. Simulation results lead to the conclusion that the FWG TWT with elliptical sheet beam investigated in this paper can make full use of relatively large electric fields and thus generate large output power with the same electric current density.

  12. Low-energy electronic excitations and band-gap renormalization in CuO

    NASA Astrophysics Data System (ADS)

    Rödl, Claudia; Ruotsalainen, Kari O.; Sottile, Francesco; Honkanen, Ari-Pekka; Ablett, James M.; Rueff, Jean-Pascal; Sirotti, Fausto; Verbeni, Roberto; Al-Zein, Ali; Reining, Lucia; Huotari, Simo

    2017-05-01

    Combining nonresonant inelastic x-ray scattering experiments with state-of-the-art ab initio many-body calculations, we investigate the electronic screening mechanisms in strongly correlated CuO in a large range of energy and momentum transfers. The excellent agreement between theory and experiment, including the low-energy charge excitations, allows us to use the calculated dynamical screening as a safe building block for many-body perturbation theory and to elucidate the crucial role played by d -d excitations in renormalizing the band gap of CuO. In this way we can dissect the contributions of different excitations to the electronic self-energy which is illuminating concerning both the general theory and this prototypical material.

  13. Electron correlations and the minority-spin band gap in half-metallic Heusler alloys.

    PubMed

    Chioncel, L; Arrigoni, E; Katsnelson, M I; Lichtenstein, A I

    2006-04-07

    Electron-electron correlations affect the band gap of half-metallic ferromagnets by introducing nonquasiparticle states just above the Fermi level. In contrast with the spin-orbit coupling, a large asymmetric nonquasiparticle spectral weight is present in the minority-spin channel, leading to a peculiar finite-temperature spin depolarization effects. Using recently developed first-principle dynamical mean-field theory, we investigate these effects for the half-metallic ferrimagnetic Heusler compound FeMnSb. We discuss depolarization effects in terms of strength of local Coulomb interaction U and temperature in FeMnSb. We propose Ni(1-x)Fe(x)MnSb alloys as a perspective materials to be used in spin-valve structures and for experimental search of nonquasiparticle states in half-metallic materials.

  14. Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

    SciTech Connect

    Othman, Mohamed A. K.; Veysi, Mehdi; Capolino, Filippo; Figotin, Alexander

    2016-03-15

    We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

  15. Microwave band on-chip coil technique for single electron spin resonance in a quantum dot

    NASA Astrophysics Data System (ADS)

    Obata, Toshiaki; Pioro-Ladrière, Michel; Kubo, Toshihiro; Yoshida, Katsuharu; Tokura, Yasuhiro; Tarucha, Seigo

    2007-10-01

    Microwave band on-chip microcoils are developed for the application to single electron spin resonance measurement with a single quantum dot. Basic properties such as characteristic impedance and electromagnetic field distribution are examined for various coil designs by means of experiment and simulation. The combined setup operates relevantly in the experiment at dilution temperature. The frequency responses of the return loss and Coulomb blockade current are examined. Capacitive coupling between a coil and a quantum dot causes photon assisted tunneling, whose signal can greatly overlap the electron spin resonance signal. To suppress the photon assisted tunneling effect, a technique for compensating for the microwave electric field is developed. Good performance of this technique is confirmed from measurement of Coulomb blockade oscillations.

  16. Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

    NASA Astrophysics Data System (ADS)

    Othman, Mohamed A. K.; Veysi, Mehdi; Figotin, Alexander; Capolino, Filippo

    2016-03-01

    We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

  17. Large electronic sputtering yield of nanodimensional Au thin films: Dominant role of thermal conductivity and electron phonon coupling factor

    NASA Astrophysics Data System (ADS)

    Singh, Udai B.; Pannu, Compesh; Agarwal, Dinesh C.; Ojha, Sunil; Khan, Saif A.; Ghosh, Santanu; Avasthi, Devesh K.

    2017-03-01

    Detailed experiments and theoretical calculations on electronic sputtering of Au thin films (5-200 nm) on a quartz substrate are performed, revealing unusually large electronic sputtering, dependent on the thickness of the films. The dependence of electronic thermal conductivity (κe), electron-phonon coupling factor (g), and lattice thermal conductivity (κa) on the effective electron mean free path is taken into account in the thermal spike calculation for nanodimensional systems to elucidate the combined effect of the thickness and grain size on the electronic sputtering yield. The thermal spike simulation with refined parameters for nanodimensional systems gives a better explanation of the electronic sputtering process with a very good correlation between the experimental and theoretical yields than that of the thermal spike model with bulk parameters.

  18. Flat electronic bands in fractal-kagomé network and the effect of perturbation

    SciTech Connect

    Nandy, Atanu Chakrabarti, Arunava

    2016-05-06

    We demonstrate an analytical prescription of demonstrating the flat band [FB] states in a fractal incorporated kagomé type network that can give rise to a countable infinity of flat non-dispersive eigenstates with a multitude of localization area. The onset of localization can, in principle, be delayed in space by an appropriate choice of energy regime. The length scale, at which the onset of localization for each mode occurs, can be tuned at will following the formalism developed within the framework of real space renormalization group. This scheme leads to an exact determination of energy eigenvalue for which one can have dispersionless flat electronic bands. Furthermore, we have shown the effect ofuniform magnetic field for the same non-translationally invariant network model that has ultimately led to an‘apparent invisibility’ of such staggered localized states and to generate absolutely continuous sub-bands in the energy spectrum and again an interesting re-entrant behavior of those FB states.

  19. All-electron GW quasiparticle band structures of group 14 nitride compounds

    NASA Astrophysics Data System (ADS)

    Chu, Iek-Heng; Kozhevnikov, Anton; Schulthess, Thomas C.; Cheng, Hai-Ping

    2014-07-01

    We have investigated the group 14 nitrides (M3N4) in the spinel phase (γ-M3N4 with M = C, Si, Ge, and Sn) and β phase (β-M3N4 with M = Si, Ge, and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves (LAPW) and then corrected using single-shot G0W0 calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the Γ point have been found for spinel-type nitrides γ-M3N4 with M = Si, Ge, and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core d electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

  20. All-electron GW quasiparticle band structures of group 14 nitride compounds

    SciTech Connect

    Chu, Iek-Heng; Cheng, Hai-Ping; Kozhevnikov, Anton; Schulthess, Thomas C.

    2014-07-28

    We have investigated the group 14 nitrides (M{sub 3}N{sub 4}) in the spinel phase (γ-M{sub 3}N{sub 4} with M = C, Si, Ge, and Sn) and β phase (β-M{sub 3}N{sub 4} with M = Si, Ge, and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves (LAPW) and then corrected using single-shot G{sub 0}W{sub 0} calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the Γ point have been found for spinel-type nitrides γ-M{sub 3}N{sub 4} with M = Si, Ge, and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core d electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

  1. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

    PubMed

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-11-13

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

  2. Energy band alignment and electronic states of amorphous carbon surfaces in vacuo and in aqueous environment

    SciTech Connect

    Caro, Miguel A.; Määttä, Jukka; Lopez-Acevedo, Olga; Laurila, Tomi

    2015-01-21

    In this paper, we obtain the energy band positions of amorphous carbon (a–C) surfaces in vacuum and in aqueous environment. The calculations are performed using a combination of (i) classical molecular dynamics (MD), (ii) Kohn-Sham density functional theory with the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, and (iii) the screened-exchange hybrid functional of Heyd, Scuseria, and Ernzerhof (HSE). PBE allows an accurate generation of a-C and the evaluation of the local electrostatic potential in the a-C/water system, HSE yields an improved description of energetic positions which is critical in this case, and classical MD enables a computationally affordable description of water. Our explicit calculation shows that, both in vacuo and in aqueous environment, the a-C electronic states available in the region comprised between the H{sub 2}/H{sub 2}O and O{sub 2}/H{sub 2}O levels of water correspond to both occupied and unoccupied states within the a-C pseudogap region. These are localized states associated to sp{sup 2} sites in a-C. The band realignment induces a shift of approximately 300 meV of the a-C energy band positions with respect to the redox levels of water.

  3. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths

    PubMed Central

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-01-01

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm. PMID:26563679

  4. Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor.

    PubMed

    Sahakyan, M; Tran, V H

    2016-05-25

    The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with [Formula: see text] K, [Formula: see text] and moderate electron-phonon coupling [Formula: see text]. Some evidences for anisotropic superconducting gap are found, including e.g. reduced specific heat jump ([Formula: see text]) at T c, diminished superconducting energy gap ([Formula: see text]) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ([Formula: see text]), and a concave curvature of the [Formula: see text] line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter [Formula: see text]. The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin-orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, [Formula: see text] meV is observed and a sizeable ratio [Formula: see text] could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity.

  5. Banded structures in electron pitch angle diffusion coefficients from resonant wave-particle interactions

    SciTech Connect

    Tripathi, A. K. Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-04-15

    Electron pitch angle (D{sub αα}) and momentum (D{sub pp}) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies ≤10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = ±1, ±2, … ±5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (α) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D{sub αα} and D{sub pp} coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The D{sub pp} diffusion coefficient for ECH waves is one to two orders smaller than D{sub αα} coefficients. For chorus waves, D{sub pp} coefficients are about an order of magnitude smaller than D{sub αα} coefficients for the case n ≠ 0. In case of Landau resonance, the values of D{sub pp} coefficient are generally larger than the values of D{sub αα} coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89° and harmonic resonances n = +1, +2, and +3

  6. The electronic and transport properties of monolayer transition metal dichalcogenides: a complex band structure analysis

    NASA Astrophysics Data System (ADS)

    Szczesniak, Dominik

    Recently, monolayer transition metal dichalcogenides have attracted much attention due to their potential use in both nano- and opto-electronics. In such applications, the electronic and transport properties of group-VIB transition metal dichalcogenides (MX2 , where M=Mo, W; X=S, Se, Te) are particularly important. Herein, new insight into these properties is presented by studying the complex band structures (CBS's) of MX2 monolayers while accounting for spin-orbit coupling effects. By using the symmetry-based tight-binding model a nonlinear generalized eigenvalue problem for CBS's is obtained. An efficient method for solving such class of problems is presented and gives a complete set of physically relevant solutions. Next, these solutions are characterized and classified into propagating and evanescent states, where the latter states present not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gaps, which describe the tunneling currents in the MX2 materials. The importance of CBS's and tunneling currents is demonstrated by the analysis of the quantum transport across MX2 monolayers within phase field matching theory. Present work has been prepared within the Qatar Energy and Environment Research Institute (QEERI) grand challenge ATHLOC project (Project No. QEERI- GC-3008).

  7. Band-structure-based collisional model for electronic excitations in ion-surface collisions

    SciTech Connect

    Faraggi, M.N.; Gravielle, M.S.; Alducin, M.; Silkin, V.M.; Juaristi, J.I.

    2005-07-15

    Energy loss per unit path in grazing collisions with metal surfaces is studied by using the collisional and dielectric formalisms. Within both theories we make use of the band-structure-based (BSB) model to represent the surface interaction. The BSB approach is based on a model potential and provides a precise description of the one-electron states and the surface-induced potential. The method is applied to evaluate the energy lost by 100 keV protons impinging on aluminum surfaces at glancing angles. We found that when the realistic BSB description of the surface is used, the energy loss obtained from the collisional formalism agrees with the dielectric one, which includes not only binary but also plasmon excitations. The distance-dependent stopping power derived from the BSB model is in good agreement with available experimental data. We have also investigated the influence of the surface band structure in collisions with the Al(100) surface. Surface-state contributions to the energy loss and electron emission probability are analyzed.

  8. Electronic and thermoelectric properties of Mexican hat bands in van-der-Waals materials

    NASA Astrophysics Data System (ADS)

    Wickramaratne, Darshana; Zahid, Ferdows; Lake, Roger

    2015-03-01

    Mexican hat dispersions are relatively common in few-layer two-dimensional materials. In one to four monolayers of the group-III chalcogenides (GaS, GaSe, InS, InSe) and Bi2Se3 the valence band undergoes a band inversion from a parabolic to an inverted Mexican hat dispersion as the film thickness is reduced from bulk to a single monolayer. The band inversion is robust against changes in stacking order, omission or inclusion of spin-orbit coupling and the choice of functional. The Mexican hat dispersion results in a 1/√{ E} singularity in the two-dimensional density of states and a step-function turn on in the density of modes. The largest radius of the ring of states occurs for a single monolayer of each material. The dispersion with the largest radius coincides with the maximum power factor and ZT for a material at room temperature. Ab-initio electronic structure calculations are used with a Landauer approach to calculate the thermoelectric transport coefficients. Analytical models of the Mexican hat and the parabolic dispersions are used for comparison and analysis. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring this effect since the radius of the Mexican hat band edge increases linearly with vertical electric field. Support by the NSF and SRC-NRI Project 2204.001 (NSF-ECCS-1124733), FAME, one of six centers of STARnet, a SRC program sponsored by MARCO and DARPA and the use of XSEDE NSF Grant # OCI-1053575.

  9. Effect of intercalated lithium on the electronic band structure of indium selenide

    NASA Astrophysics Data System (ADS)

    1990-08-01

    The purpose of the project on Superionics supported by DARPA Contract No. N00014-88-K-0392 is to develop a physical understanding of the elements of a solid state battery consisting of a lithium anode, a lithium-doped borate glass separator and a lithium-intercalated InSe cathode. In this report a theoretical analysis based on a tight-binding model is presented for the electronic structure of both pure and lithium-intercalated InSe. An understanding of the electronic structure is necessary for an understanding of the electrical conductivity due to both electronic motion and lithium-ion motion. The conductivity is an important parameter for the performance of the solid state battery.

  10. Electron-phonon vertex in the two-dimensional one-band Hubbard model

    NASA Astrophysics Data System (ADS)

    Huang, Z. B.; Hanke, W.; Arrigoni, E.; Scalapino, D. J.

    2003-12-01

    Using quantum Monte Carlo techniques, we study the effects of electronic correlations on the effective electron-phonon (el-ph) coupling in a two-dimensional one-band Hubbard model. We consider a momentum-independent bare ionic el-ph coupling. In the weak- and intermediate-correlation regimes, we find that the on-site Coulomb interaction U acts to effectively suppress the ionic el-ph coupling at all electron and phonon momenta. In this regime, our numerical simulations are in good agreement with the results of perturbation theory to order U2. However, entering the strong-correlation regime, we find that the forward-scattering process stops decreasing and begins to substantially increase as a function of U, leading to an effective el-ph coupling which is peaked in the forward direction. Whereas at weak and intermediate Coulomb interactions, screening is the dominant correlation effect suppressing the el-ph coupling, at larger U values irreducible vertex corrections become more important and give rise to this increase. These vertex corrections depend crucially on the renormalized electronic structure of the strongly correlated system.

  11. The Green's function density functional tight-binding (gDFTB) method for molecular electronic conduction.

    PubMed

    Reimers, Jeffrey R; Solomon, Gemma C; Gagliardi, Alessio; Bilić, Ante; Hush, Noel S; Frauenheim, Thomas; Di Carlo, Aldo; Pecchia, Alessandro

    2007-07-05

    A review is presented of the nonequilibrium Green's function (NEGF) method "gDFTB" for evaluating elastic and inelastic conduction through single molecules employing the density functional tight-binding (DFTB) electronic structure method. This focuses on the possible advantages that DFTB implementations of NEGF have over conventional methods based on density functional theory, including not only the ability to treat large irregular metal-molecule junctions with high nonequilibrium thermal distributions but perhaps also the ability to treat dispersive forces, bond breakage, and open-shell systems and to avoid large band lineup errors. New results are presented indicating that DFTB provides a useful depiction of simple gold-thiol interactions. Symmetry is implemented in DFTB, and the advantages it brings in terms of large savings of computational resources with significant increase in numerical stability are described. The power of DFTB is then harnessed to allow the use of gDFTB as a real-time tool to discover the nature of the forces that control inelastic charge transport through molecules and the role of molecular symmetry in determining both elastic and inelastic transport. Future directions for the development of the method are discussed.

  12. Transition-metal-substituted indium thiospinels as novel intermediate-band materials: prediction and understanding of their electronic properties.

    PubMed

    Palacios, P; Aguilera, I; Sánchez, K; Conesa, J C; Wahnón, P

    2008-07-25

    Results of density-functional calculations for indium thiospinel semiconductors substituted at octahedral sites with isolated transition metals (M=Ti,V) show an isolated partially filled narrow band containing three t2g-type states per M atom inside the usual semiconductor band gap. Thanks to this electronic structure feature, these materials will allow the absorption of photons with energy below the band gap, in addition to the normal light absorption of a semiconductor. To our knowledge, we demonstrate for the first time the formation of an isolated intermediate electronic band structure through M substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum. This electronic structure feature could be applied for developing a new third-generation photovoltaic cell.

  13. Effect of conduction band nonprabolicity on the Rashba spin splitting of AlGaN/GaN QWs

    NASA Astrophysics Data System (ADS)

    Ming, Li; Wu, Wang; Zhengyin, Zhao; Hongpei, Han; Fan, Libo; Feng, Zhi-bo

    2017-09-01

    By using the perturbation expansion method and self-consistent iterative method, we evaluate the effect of the conduction band nonprabolicity on the wave vector (kt) dependent Rashba coefficient (α) and nonlinear Rashba spin splitting (ΔE) in the Al0.5Ga0.5N/GaN quantum well (QW). The effective mass (energy) under the first order approximation mt1 (Ek1) is in proximity to the iterative result mtp (Ekp) and mt1>mtp, Ek1conduction band nonparabolicity reaches about 3% at kt=1 nm-1. Around the left heterointerface, the probability density is high and Ek0>Ekp>Ek1, so α0<αp<α1, ΔE0<ΔEp<ΔE1. With increasing kt, α decreases, and ΔE increases slowly. For small kt, α0 (ΔE0), α1 (ΔE1) and αp (ΔEp) are nearly the same. While for large kt, the difference between α0 and α1 (αp) increases rapidly, but the difference between ΔE0 and ΔE1 (ΔEp) increases slowly.

  14. Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.

    PubMed

    Bilc, Daniel I; Hautier, Geoffroy; Waroquiers, David; Rignanese, Gian-Marco; Ghosez, Philippe

    2015-04-03

    Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications.

  15. Hybridization of electronic band structure and enhancement of thermoelectric properties of ZnSb thin film by In doping

    NASA Astrophysics Data System (ADS)

    Zheng, Zhuang-hao; Fan, Ping; Luo, Jing-ting; Liang, Guang-xing

    2017-04-01

    Here we report the In doped ZnSb thermoelectric thin films which were deposited by direct current magnetron co-sputtering with prefabricate layer doping method. The X-ray diffraction result indicates that the peaks of the In doped ZnSb thin films are related to ZnSb phase and are slightly shifted to smaller angle. The calculations of In occupy one of the Sb or Zn location in normal site were performed based on the first-principles and it has lower total energy when the In substitutes the Zn. The thermo-electrical testing experimental results indicate that the Seebeck coefficient increases greatly after In doped due to increase of the total density of states and the complicate of the electronic band structure. The Fermi surface moves to the valence band after In doped that will reduce the electrical conductivity and it corresponds to the testing result. It can be observed that the power factor of the In doped ZnSb is approach two times than that of the thin film without doping.

  16. Electronic structures, elastic properties, and minimum thermal conductivities of cermet M{sub 3}AlN

    SciTech Connect

    Wang, Jin; Chen, ZhiQian; Li, ChunMei; Li, Feng; Nie, ChaoYin

    2014-08-15

    The electronic structures and elastic anisotropies of cubic Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf{sub 3}AlN is found to be significantly different from that of Ti{sub 3}AlN and Zr{sub 3}AlN, which involve the differences in the bonding strength. It is notable that Hf{sub 3}AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. - Graphical abstract: 1.Young's moduli of anti-perovskite Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN in full space. 2.Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr{sub 3}AlN. - Highlights: • We calculated three anti-perovskite cermets with first-principles theory. • We illustrated 3D Young modulus and found the anomalous anisotropy. • We explained the anomaly and calculated the minimum thermal conductivities.

  17. Electronic structure and band gaps in cationic heterocyclic oligomers. Multidimensional analysis of the interplay of heteroatoms, substituents, molecular length, and charge on redox and transparency characteristics.

    PubMed

    Hutchison, Geoffrey R; Ratner, Mark A; Marks, Tobin J

    2005-03-03

    Oxidative doping of extended pi-conjugated polymers and oligomers produces dramatic changes in optical and electrical properties, arising from polaron and soliton-derived midgap states. Despite the great importance of such changes for materials properties, far less is known about the cationic polaron states than about the neutral, semiconducting or insulating, undoped materials. The systematic, multifactor computational analysis of oligoheterocycles such as oligothiophenes, oligofurans, and oligopyrroles presented here affords qualitative and quantitative understanding of the interplay among skeletal substitution pattern, electronic structure, and the effective band gap reduction on p-doping. A simple linear relation is derived for predicting p-doped oligomer and polymer effective band gaps based on those of the neutral oligomers; this relationship confirms the effectiveness of a "fixed band" approximation and explains the counterintuitive increase of the effective band gap on p-doping of many small band gap oligomers. The present analysis also suggests new candidates for transparent conductive polymers and predicts limiting behavior of ionization potential, electron affinity, and other properties for various polyheterocyclic systems. The results yield insight into materials constraints in electrochromic polymers as well as on p- and n-type conductors and semiconductors.

  18. Electrochemically oxidized electronic and ionic conducting nanostructured block copolymers for lithium battery electrodes.

    PubMed

    Patel, Shrayesh N; Javier, Anna E; Balsara, Nitash P

    2013-07-23

    Block copolymers that can simultaneously conduct electronic and ionic charges on the nanometer length scale can serve as innovative conductive binder material for solid-state battery electrodes. The purpose of this work is to study the electronic charge transport of poly(3-hexylthiophene)-b-poly(ethylene oxide) (P3HT-PEO) copolymers electrochemically oxidized with lithium bis(trifluoromethanesulfonyl) imide (LiTFSI) salt in the context of a lithium battery charge/discharge cycle. We use a solid-state three-terminal electrochemical cell that enables simultaneous conductivity measurements and control over electrochemical doping of P3HT. At low oxidation levels (ratio of moles of electrons removed to moles of 3-hexylthiophene moieties in the electrode), the electronic conductivity (σe,ox) increases from 10(-7) S/cm to 10(-4) S/cm. At high oxidation levels, σe,ox approaches 10(-2) S/cm. When P3HT-PEO is used as a conductive binder in a positive electrode with LiFePO4 active material, P3HT is electrochemically active within the voltage window of a charge/discharge cycle. The electronic conductivity of the P3HT-PEO binder is in the 10(-4) to 10(-2) S/cm range over most of the potential window of the charge/discharge cycle. This allows for efficient electronic conduction, and observed charge/discharge capacities approach the theoretical limit of LiFePO4. However, at the end of the discharge cycle, the electronic conductivity decreases sharply to 10(-7) S/cm, which means the "conductive" binder is now electronically insulating. The ability of our conductive binder to switch between electronically conducting and insulating states in the positive electrode provides an unprecedented route for automatic overdischarge protection in rechargeable batteries.

  19. A stretchable and screen-printable conductive ink for stretchable electronics

    NASA Astrophysics Data System (ADS)

    Mohammed, Anwar; Pecht, Michael

    2016-10-01

    Stretchable electronics can offer an added degree of design freedom and generate products with unprecedented capabilities. Stretchable conductive ink serving as interconnect, is a key enabler for stretchable electronics. This paper focuses on the development of a stretchable and screen printable conductive ink which could be stretched more than 500 cycles at 20% strain while maintaining electrical and mechanical integrity. The screen printable and stretchable conductive ink developed in this paper marks an important milestone for this nascent technology.

  20. Comparative study of conduction-band and valence-band edges of TiO2, SrTiO3, and BaTiO3 by ionization potential measurements

    NASA Astrophysics Data System (ADS)

    Fujisawa, Jun-ichi; Eda, Takumi; Hanaya, Minoru

    2017-10-01

    Here, we report the energy positions of the conduction-band and valence-band edges of anatase titanium dioxide (TiO2), strontium titanate (SrTiO3), and barium titanate (BaTiO3). From the photoelectron yield spectra, the ionization potentials of anatase TiO2, SrTiO3, and BaTiO3 were estimated to be ca. 7.25, 6.90, 7.05 eV, respectively, which correspond to the top of the valence band of each titanium oxide. From these data and their band gaps, it was found that the bottoms of the conduction bands of SrTiO3 and BaTiO3 are positioned above that of anatase TiO2 by 0.40 and 0.23 eV, respectively.