Determination of band offsets at GaN/single-layer MoS{sub 2} heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee

2016-07-18

We report the band alignment parameters of the GaN/single-layer (SL) MoS{sub 2} heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS{sub 2}/c-sapphire. We confirm that the MoS{sub 2} is an SL by measuring the separation and position of room temperature micro-Raman E{sup 1}{sub 2g} and A{sup 1}{sub g} modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS{sub 2} heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS{sub 2} and GaN. Themore » valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.« less

Band alignment at the Cu2ZnSn(SxSe1-x)4/CdS interface

NASA Astrophysics Data System (ADS)

Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B.

2011-06-01

Energy band alignments between CdS and Cu2ZnSn(SxSe1-x)4 (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling

NASA Astrophysics Data System (ADS)

Ryczko, K.; Sek, G.; Sitarek, P.; Mika, A.; Misiewicz, J.; Langer, F.; Höfling, S.; Forchel, A.; Kamp, M.

2013-06-01

Optical transitions in GaAs1-xNx/GaAs quantum wells (QWs) have been probed by two complementary techniques, modulation spectroscopy in a form of photoreflectance and surface photovoltage spectroscopy. Transition energies in QWs of various widths and N contents have been compared with the results of band structure calculations based on the 10-band k.p Hamiltonian. Due to the observation of higher order transitions in the measured spectra, the band gap discontinuities at the GaAsN/GaAs interface and the electron effective masses could be determined, both treated as semi-free parameters to get the best matching between the theoretical and experimental energies. We have obtained the chemical conduction band offset values of 86% for x = 1.2% and 83% for x = 2.2%, respectively. For these determined band offsets, the electron effective masses equal to about 0.09 mo in QWs with 1.2% N and 0.15 mo for the case of larger N content of 2.2%.

Band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition

NASA Astrophysics Data System (ADS)

Wakabayashi, Ryo; Hattori, Mai; Yoshimatsu, Kohei; Horiba, Koji; Kumigashira, Hiroshi; Ohtomo, Akira

2018-06-01

High-quality β-(AlxGa1-x)2O3 (x = 0-0.37) films were epitaxially grown on β-Ga2O3 (100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-Ga2O3 and α-Al2O3. The bandgap was tuned from 4.55 ± 0.01 eV (x = 0) to 5.20 ± 0.02 eV (x = 0.37), where bowing behavior was observed. The band alignment at the β-(AlxGa1-x)2O3/β-Ga2O3 interfaces was found to be type-I with conduction- and valence-band offsets of 0.52 ± 0.08 eV (0.37 ± 0.08 eV) and 0.13 ± 0.07 eV (0.02 ± 0.07 eV) for x = 0.37 (0.27), respectively. The large conduction-band offsets are ascribed to the dominant contribution of the cation-site substitution to the conduction band.

In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment

NASA Astrophysics Data System (ADS)

Chen, Chang Pang; Ong, Bin Leong; Ong, Sheau Wei; Ong, Weijie; Tan, Hui Ru; Chai, Jian Wei; Zhang, Zheng; Wang, Shi Jie; Pan, Ji Sheng; Harrison, Leslie John; Kang, Hway Chuan; Tok, Eng Soon

2017-10-01

Room temperature growth of HfO2 thin film on clean 2H-MoS2 via plasma-sputtering of Hf-metal target in an argon/oxygen environment was studied in-situ using x-ray photoelectron spectroscopy (XPS). The deposited film was observed to grow akin to a layer-by-layer growth mode. At the onset of growth, a mixture of sulfate- and sulfite-like species (SOx2- where x = 3, 4), and molybdenum trioxide (MoO3), are formed at the HfO2/MoS2 interface. An initial decrease in binding energies for both Mo 3d and S 2p core-levels of the MoS2 substrate by 0.4 eV was also observed. Their binding energies, however, did not change further with increasing HfO2 thickness. There was no observable change in the Hf4f core-level binding energy throughout the deposition process. With increasing HfO2 deposition, MoO3 becomes buried at the interface while SOx2- was observed to be present in the film. The shift of 0.4 eV for both Mo 3d and S 2p core-levels of the MoS2 substrate can be attributed to a charge transfer from the substrate to the MoO3/SOx2--like interface layer. Consequently, the Type I heterojunction valence band offset (conduction band offset) becomes 1.7 eV (2.9 eV) instead of 1.3 eV (3.3 eV) expected from considering the bulk HfO2 and MoS2 valence band offset (conduction band offset). The formation of these states and its influence on band offsets will need to be considered in their device applications.

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge

NASA Astrophysics Data System (ADS)

Gibbon, J. T.; Jones, L.; Roberts, J. W.; Althobaiti, M.; Chalker, P. R.; Mitrovic, Ivona Z.; Dhanak, V. R.

2018-06-01

Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were determined to be 3.49± 0.08 eV and 3.47± 0.08 eV with Si(111) and Si(100) respectively and 3.51eV± 0.08 eV with Ge(100). Inverse photoemission spectroscopy (IPES) was used to investigate the conduction band of a thick Ga2O3 film and the band gap of the film was determined to be 4.63±0.14 eV. The conduction band offsets were found to be 0.03 eV and 0.05eV with Si(111) and Si(100) respectively, and 0.45eV with Ge(100). The results indicate that the heterojunctions of Ga2O3 with Si(100), Si(111) and Ge(100) are all type I heterojunctions.

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wei; Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871; Zhang, Qin

2014-11-24

We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom ofmore » the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.« less

Temperature dependent empirical pseudopotential theory for self-assembled quantum dots.

PubMed

Wang, Jianping; Gong, Ming; Guo, Guang-Can; He, Lixin

2012-11-28

We develop a temperature dependent empirical pseudopotential theory to study the electronic and optical properties of self-assembled quantum dots (QDs) at finite temperature. The theory takes the effects of both lattice expansion and lattice vibration into account. We apply the theory to InAs/GaAs QDs. For the unstrained InAs/GaAs heterostructure, the conduction band offset increases whereas the valence band offset decreases with increasing temperature, and there is a type-I to type-II transition at approximately 135 K. Yet, for InAs/GaAs QDs, the holes are still localized in the QDs even at room temperature, because the large lattice mismatch between InAs and GaAs greatly enhances the valence band offset. The single-particle energy levels in the QDs show a strong temperature dependence due to the change of confinement potentials. Because of the changes of the band offsets, the electron wavefunctions confined in QDs increase by about 1-5%, whereas the hole wavefunctions decrease by about 30-40% when the temperature increases from 0 to 300 K. The calculated recombination energies of excitons, biexcitons and charged excitons show red shifts with increasing temperature which are in excellent agreement with available experimental data.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE PAGES

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine; ...

2016-08-01

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter, E-mail: johannes.seif@alumni.epfl.ch; Ballif, Christophe; De Wolf, Stefaan

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation ofmore » such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain

NASA Astrophysics Data System (ADS)

Kim, Joon-Seok; Ahmad, Rafia; Pandey, Tribhuwan; Rai, Amritesh; Feng, Simin; Yang, Jing; Lin, Zhong; Terrones, Mauricio; Banerjee, Sanjay K.; Singh, Abhishek K.; Akinwande, Deji; Lin, Jung-Fu

2018-01-01

Semiconducting transition metal dichalcogenides (TMDs) demonstrate a wide range of optoelectronic properties due to their diverse elemental compositions, and are promising candidates for next-generation optoelectronics and energy harvesting devices. However, effective band offset engineering is required to implement practical structures with desirable functionalities. Here, we explore the pressure-induced band structure evolution of monolayer WS2 and Mo0.5W0.5S2 using hydrostatic compressive strain applied in a diamond anvil cell (DAC) apparatus and theoretical calculations, in order to study the modulation of band structure and explore the possibility of band alignment engineering through different compositions. Higher W composition in Mo(1-x)W(x)S2 contributes to a greater pressure-sensitivity of direct band gap opening, with a maximum value of 54 meV GPa-1 in WS2. Interestingly, while the conduction band minima (CBMs) remains largely unchanged after the rapid gap increase, valence band maxima (VBMs) significantly rise above the initial values. It is suggested that the pressure- and composition-engineering could introduce a wide variety of band alignments including type I, type II, and type III heterojunctions, and allow to construct precise structures with desirable functionalities. No structural transition is observed during the pressure experiments, implying the pressure could provide selective modulation of band offset.

Band alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface determined by charge corrected X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Yan, Baojun; Liu, Shulin; Yang, Yuzhen; Heng, Yuekun

2016-05-01

Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn0.8Al0.2O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn0.8Al0.2O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔEV) and conduction band offset (ΔEC) for the interface of the MgO/Zn0.8Al0.2O heterostructure have been constructed. An accurate value of ΔEV = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn0.8Al0.2O, a type-II heterojunction with a ΔEC of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.

Band alignment of TiO{sub 2}/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Haibo, E-mail: hbfan@nwu.edu.cn, E-mail: liusz@snnu.edu.cn; School of Physics, Northwest University, Xi’an 710069; Yang, Zhou

2016-01-15

The energy band alignment between pulsed-laser-deposited TiO{sub 2} and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO{sub 2}/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltagemore » test has verified that the band alignment has a significant effect on the current transport of the heterojunction.« less

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

NASA Astrophysics Data System (ADS)

Lee, Kai-Hsuan; Chang, Ping-Chuan; Chen, Tse-Pu; Chang, Sheng-Po; Shiu, Hung-Wei; Chang, Lo-Yueh; Chen, Chia-Hao; Chang, Shoou-Jinn

2013-02-01

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kai-Hsuan; Chen, Chia-Hao; Chang, Ping-Chuan

2013-02-18

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

NASA Astrophysics Data System (ADS)

Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

2017-07-01

The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.

Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

NASA Astrophysics Data System (ADS)

Padilha, A. C. M.; McKenna, K. P.

2018-04-01

Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

First principles calculations of La2O3/GaAs interface properties under biaxial strain and hydrostatic pressure

NASA Astrophysics Data System (ADS)

Shi, Li-Bin; Li, Ming-Biao; Xiu, Xiao-Ming; Liu, Xu-Yang; Zhang, Kai-Cheng; Li, Chun-Ran; Dong, Hai-Kuan

2017-04-01

La2O3 is a potential dielectric material with high permittivity (high-κ) for metal-oxide-semiconductor (MOS) devices. However, band offsets and oxide defects should still be concerned. Smaller band offsets and carrier traps increase leakage current, and degenerate performance of the devices. In this paper, the interface behaviors of La2O3/GaAs under biaxial strain and hydrostatic pressure are investigated, which is performed by first principles calculations based on density functional theory (DFT). Strain engineering is attempted to improve performance of the metal/La2O3/GaAs devices. First of all, we creatively realize band alignment of La2O3/GaAs interface under biaxial strain and hydrostatic pressure. The proper biaxial tensile strain can effectively increase valence band offsets (VBO) and conduction band offsets (CBO), which can be used to suppress leakage current. However, the VBO will decrease with the increase of hydrostatic pressure, indicating that performance of the devices is degenerated. Then, a direct tunneling leakage current model is used to investigate current and voltage characteristics of the metal/La2O3/GaAs. The impact of biaxial strain and hydrostatic pressure on leakage current is discussed. At last, formation energies and transition levels of oxygen interstitial (Oi) and oxygen vacancy (VO) in La2O3 are assessed. We investigate how they will affect performance of the devices.

Intermediate-phase method for computing the natural band offset between two materials with dissimilar structures

NASA Astrophysics Data System (ADS)

Gu, Hui-Jun; Zhang, Yue-Yu; Chen, Shi-You; Xiang, Hong-Jun; Gong, Xin-Gao

2018-06-01

The band offset between different semiconductors is an important physical quantity determining carrier transport properties near the interface in heterostructure devices. Computation of the natural band offset is a longstanding challenge. We propose an intermediate-phase method to predict the natural band offset between two structures with different symmetry, for which the superlattice model cannot be directly constructed. With this method and the intermediate phases obtained by our searching algorithm, we successfully calculate the natural band offsets for two representative systems: (i) zinc-blende CdTe and wurtzite CdS and (ii) diamond and graphite. The calculation shows that the valence band maximum (VBM) of zinc-blende CdTe lies 0.71 eV above that of wurtzite CdS, close to the result 0.76 eV obtained by the three-step method. For the natural band offset between diamond and graphite which could not be computed reliably with any superlattice methods, our calculation shows that the Fermi level of graphite lies 1.51 eV above the VBM of diamond using an intermediate phase. This method, under the assumption that the transitivity rule is valid, can be used to calculate the band offsets between any semiconductors with different symmetry on condition that the intermediate phase is reasonably designed.

Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tayagaki, Takeshi, E-mail: tayagaki-t@aist.go.jp; Sugaya, Takeyoshi

2016-04-11

We demonstrate type-II quantum dots (QDs) with long carrier lifetimes in a wide-bandgap host as a promising candidate for intermediate-band solar cells. Type-II InP QDs are fabricated in a wide-bandgap InGaP host using molecular beam epitaxy. Time-resolved photoluminescence measurements reveal an extremely long carrier lifetime (i.e., greater than 30 ns). In addition, from temperature-dependent PL spectra, we find that the type-II InP QDs form a negligible valence band offset and conduction band offset of ΔE{sub c} ≈ 0.35 eV in the InGaP host. Such a type-II confinement potential for InP/InGaP QDs has a significant advantage for realizing efficient two-step photon absorption and suppressed carriermore » capture in QDs via Auger relaxation.« less

Epitaxial growth of MgO/Ga2O3 heterostructure and its band alignment studied by X-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Matsuo, Norihiro; Doko, Naoki; Yasukawa, Yukiko; Saito, Hidekazu; Yuasa, Shinji

2018-07-01

We have grown an epitaxial MgO/Ga2O3 heterostructure on a MgO(001) substrate by molecular beam epitaxy. Crystallographic studies revealed the out-of-plane and in-plane crystal orientations between the MgO overlayer and the Ga2O3 layer, which were MgO(001) ∥ β-Ga2O3(001) and MgO[100] ∥ β-Ga2O3 [02\\bar{1}], respectively. The valence band offset at the MgO/β-Ga2O3 interface was determined to be 0.19 eV (type-II band alignment) by X-ray photoelectron spectroscopy, resulting in a large conduction band offset of 2.7–3.2 eV. These results indicate that MgO is a promising potential barrier for electrons in an epitaxial MgO/Ga2O3 multilayered structure.

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

PubMed Central

Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

2014-01-01

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering. PMID:25283334

Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructures.

PubMed

Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

2014-10-06

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In 0.17 Al 0.83 N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with E(AlInN(VBM) being above E(GaN)(VBM)). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering.

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy.

PubMed

Yan, Baojun; Liu, Shulin; Heng, Yuekun; Yang, Yuzhen; Yu, Yang; Wen, Kaile

2017-12-01

Pure aluminum oxide (Al 2 O 3 ) and zinc aluminum oxide (Zn x Al 1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al 1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (ΔE V ) and conduction band offset (ΔE C ) for the interface of the Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction have been constructed. An accurate value of ΔE V  = 0.82 ± 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al 2 O 3 thickness. Given the experimental E g of 6.8 eV for Al 2 O 3 and 5.29 eV for Zn 0.8 Al 0.2 O, a type-I heterojunction with a ΔE C of 0.69 ± 0.12 eV was found. The precise determination of the band alignment of Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.

Study of surface and bulk electronic structure of II-VI semiconductor nanocrystals using Cu as a nanosensor.

PubMed

Grandhi, G Krishnamurthy; Tomar, Renu; Viswanatha, Ranjani

2012-11-27

Efficiency of the quantum dots based solar cells relies on charge transfer at the interface and hence on the relative alignment of the energy levels between materials. Despite a high demand to obtain size specific band offsets, very few studies exist where meticulous methods like photoelectron spectroscopy are used. However, semiconductor charging during measurements could result in indirect and possibly inaccurate measurements due to shift in valence and conduction band position. Here, in this report, we devise a novel method to study the band offsets by associating an atomic like state with the conduction band and hence obtaining an internal standard. This is achieved by doping copper in semiconductor nanocrystals, leading to the development of a characteristic intragap Cu-related emission feature assigned to the transition from the conduction band to the atomic-like Cu d state. Using this transition we determine the relative band alignment of II-VI semiconductor nanocrystals as a function of size in the below 10 nm size regime. The results are in excellent agreement with the available photoelectron spectroscopy data as well as the theoretical data. We further use this technique to study the excitonic band edge variation as a function of temperature in CdSe nanocrystals. Additionally, surface electronic structure of CdSe nanocrystals have been studied using quantitative measurements of absolute quantum yield and PL decay studies of the Cu related emission and the excitonic emission. The role of TOP and oleic acid as surface passivating ligand molecules has been studied for the first time.

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zech, E. S.; Chang, A. S.; Martin, A. J.

2013-08-19

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Stability and band offsets between c-plane ZnO semiconductor and LaAlO3 gate dielectric

NASA Astrophysics Data System (ADS)

Wang, Jianli; Chen, Xinfeng; Wu, Shuyin; Tang, Gang; Zhang, Junting; Stampfl, C.

2018-03-01

Wurtzite-perovskite heterostructures composed of a high dielectric constant oxide and a wide bandgap semiconductor envision promising applications in field-effect transistors. In the present paper, the structural and electronic properties of LaAlO3/ZnO heterojunctions are investigated by first-principles calculations. We study the initial adsorption of La, Al, and oxygen atoms on ZnO (0001) and (000 1 ¯ ) surfaces and find that La atoms may occupy interstitial sites during the growth of stoichiometric ZnO (0001). The band gap of the stoichiometric ZnO (0001) surface is smaller than that of the stoichiometric ZnO (000 1 ¯ ) surface. The surface formation energy indicates that La or Al atoms may substitute Zn atoms at the nonstoichiometric ZnO (0001) surface. The atomic charges, electronic density of states, and band offsets are analyzed for the optimized LaAlO3/ZnO heterojunctions. There is a band gap for the LaAlO3/ZnO (000 1 ¯ ) heterostructures, and the largest variation in charge occurs at the surface or interface. Our results suggest that the Al-terminated LaAlO3/ZnO (000 1 ¯ ) interfaces are suitable for the design of metal oxide semiconductor devices because the valence and conduction band offsets are both larger than 1 eV and the interface does not produce any in-gap states.

High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.

2013-09-15

The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination,more » which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.« less

Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices

NASA Astrophysics Data System (ADS)

Bhat, Thirumaleshwara N.; Pandey, B. K.; Krupanidhi, S. B.

2017-07-01

We report on the ferroelectric polarization-induced switchable interfacial coupling modulations in BaTiO3/GaN heterojunction transport behaviour. The ferroelectric barium titanate, BaTiO3 (BTO) was integrated with polar semiconductor gallium nitride (GaN). BTO with a tetragonal structure was deposited on a wurtzite (0 0 0 1) epitaxial GaN/c-Al2O3 substrate by pulsed laser deposition, which was further confirmed by x-ray diffraction and Raman spectroscopy. BTO/GaN heterojunctions with resistive switching behaviour exhibited modulations in transport characteristics due to the interfacial coupling. The ferroelectric nature and interfacial coupling effect of this heterojunction was confirmed with the help of piezo-response force microscopy. A valence band offset of 0.82 eV and conduction band offset of 0.62 eV were obtained for BTO/GaN heterojunctions by x-ray photo-electron spectroscopy. This interfacial coupling phenomenon was analysed and its effect on the carrier conduction in the heterojunction was investigated by band alignment studies.

Band offset engineering of 2DEG oxide systems on Si

NASA Astrophysics Data System (ADS)

Jin, Eric; Kornblum, Lior; Kumah, Divine; Zou, Ke; Broadbridge, Christine; Ngai, Joseph; Ahn, Charles; Walker, Fred

2015-03-01

The discovery of 2-dimensional electron gases (2DEGs) at perovskite oxide interfaces has sparked much interest in recent years due to their large carrier densities when compared with semiconductor heterostructures. For device applications, these oxide systems are plagued by low room temperature electrical mobilities. We present an approach to combine the high carrier density of 2DEG oxides with a higher mobility medium in order to realize the combined benefits of higher mobility and carrier density. We grow epitaxial films of the interfacial oxide system LaTiO3/SrTiO3 (LTO/STO) on silicon by molecular beam epitaxy. Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LTO/STO interfaces, consistent with the presence of a 2DEG at each interface. Sheet carrier densities of 8.9 x 1014 cm-2 per interface are measured. Band offsets between the STO and Si are obtained, showing that the conduction band edge of the STO is close in energy to that of silicon, but in a direction that hinders carrier transfer to the silicon substrate. Through modification of the STO/Si interface, we suggest an approach to raise the band offset in order to move the 2DEG from the oxide into the silicon.

Determination of band offset using continuous-wave two-photon excitation in a ZnSe quantum-well waveguide structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wagner, H. P.; Kuhnelt, M.; Wenisch, H.

2001-06-15

We investigate exciton subband transitions in a ZnSe/Zn{sub 1{minus}x}Mg{sub x}S{sub y}Se{sub 1{minus}y} multiple-quantum-well grown by molecular beam epitaxy waveguide structure by photoluminescence excitation and two-photon excitation spectroscopy. A continuous-wave two-photon absorption is realized by an efficient waveguide coupling scheme within the cryostat. From the energetic position of the 1s and 2p exciton transitions exciton binding energies of 33 and 38 meV are deduced for heavy and light-hole excitons, respectively. With these values we are able to determine the strain free and dimensionless conduction-band-offset parameter to Q{sub c}=0.3{+-}0.1.

Noninvasive Spatially Offset and Transmission Raman Mapping of Breast Tissue: A Multimodal Approach Towards the In Vivo Assessment of Tissue Pathology

DTIC Science & Technology

2013-06-01

spectroscopy on tissue biopsies to correlate spectral bands with healthy and diseased breast tissue. Observed spectral changes are compared to infrared...capabilities and performance. Additionally, we conduct spectroscopy on tissue biopsies to correlate spectral bands with healthy and diseased ... disease states, ie hyperplasia, dysplasia, malignant, benign. The instrumentation has been built and characterized using archived tissue that was

Band offset and electron affinity of MBE-grown SnSe2

NASA Astrophysics Data System (ADS)

Zhang, Qin; Li, Mingda Oscar; Lochocki, Edward B.; Vishwanath, Suresh; Liu, Xinyu; Yan, Rusen; Lien, Huai-Hsun; Dobrowolska, Malgorzata; Furdyna, Jacek; Shen, Kyle M.; Cheng, Guangjun; Hight Walker, Angela R.; Gundlach, David J.; Xing, Huili G.; Nguyen, N. V.

2018-01-01

SnSe2 is currently considered a potential two-dimensional material that can form a near-broken gap heterojunction in a tunnel field-effect transistor due to its large electron affinity which is experimentally confirmed in this letter. With the results from internal photoemission and angle-resolved photoemission spectroscopy performed on Al/Al2O3/SnSe2/GaAs and SnSe2/GaAs test structures where SnSe2 is grown on GaAs by molecular beam epitaxy, we ascertain a (5.2 ± 0.1) eV electron affinity of SnSe2. The band offset from the SnSe2 Fermi level to the Al2O3 conduction band minimum is found to be (3.3 ± 0.05) eV and SnSe2 is seen to have a high level of intrinsic electron (n-type) doping with the Fermi level positioned at about 0.2 eV above its conduction band minimum. It is concluded that the electron affinity of SnSe2 is larger than that of most semiconductors and can be combined with other appropriate semiconductors to form near broken-gap heterojunctions for the tunnel field-effect transistor that can potentially achieve high on-currents.

Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions

NASA Astrophysics Data System (ADS)

Harrington, S. D.; Sharan, A.; Rice, A. D.; Logan, J. A.; McFadden, A. P.; Pendharkar, M.; Pennachio, D. J.; Wilson, N. S.; Gui, Z.; Janotti, A.; Palmstrøm, C. J.

2017-08-01

The valence-band offsets, ΔEv, between semiconducting half-Heusler compound CoTiSb and lattice-matched III-V In0.53Ga0.47As and In0.52Al0.48As heterojunction interfaces have been measured using X-ray photoemission spectroscopy (XPS). These interfaces were formed using molecular beam epitaxy and transferred in situ for XPS measurements. Valence-band offsets of 0.30 eV and 0.58 eV were measured for CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As, respectively. By combining these measurements with previously reported XPS ΔEv (In0.53Ga0.47As/In0.52Al0.48As) data, the results suggest that band offset transitivity is satisfied. In addition, the film growth order of the interface between CoTiSb and In0.53Ga0.47As is explored and does not seem to affect the band offsets. Finally, the band alignments of CoTiSb with GaAs, AlAs, and InAs are calculated using the density function theory with the HSE06 hybrid functional and applied to predict the band alignment of CoTiSb with In0.53Ga0.47As and In0.52Al0.48As. Good agreement is found between the calculated valence-band offsets and those determined from XPS.

Suitability of II-VI semiconductors for photonic applications: common-anion versus common-cation superlattices

NASA Astrophysics Data System (ADS)

Tit, Nacir

2003-12-01

Based on the sp3s tight-binding method, the electronic band strcutures of both common-anion and common-cation II-VI superlattices (SLs) are investigated. As models, we took for the former the case of CdTe/ZnTe(001) SLs where the common anion is confirmed to yield a vanishing or a small valence-band offset (VBO) and the biaxial strain, of course, contributes in the valence-band splittings and yield type-I SLs in most of the studied cases. Whereas, we tok as a second model two different SLs: the ZnS/ZnSe(001) and ZnSe/ZnTe(001) SLs. We have confirmed that the common-cation SLs cannot have a vanishing conduction-band offsets (CBO), as speculated, but rather the CBO could be as large as the VBO. The biaxial strain, again, can participate here in the formation of the band offsets and yield either type-I SLs, as in the case of the ZnS/ZnSe, or type-II SLs, as in the case of ZnSe/ZnTe. Moreover, the reason why some type-II SLs, such as ZnSe/ZnTe(001), could be useful as photonic devices is explained by the tendency of the carriers to confine near the interface as a result of a strong photoluminenscence data and conclusions have been drawn about the strain morpholgy and the structural and optical qualities of the experimental samples.

BariumCopperChFluorine (Ch = Sulfur, Selenium, Tellurium) p-type transparent conductors

NASA Astrophysics Data System (ADS)

Zakutayev, Andriy

BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 -- 3.5 eV) and a high concentration of free holes (1018 -- 1020 cm-3 ) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level close to the valence band maximum. BaCuChF thin film solid solutions prepared by pulsed laser deposition (PLD) have tunable properties, such as lattice constants, conductivity and optical band gaps. BaCuSF and BaCuSeF materials also feature room-temperature stable 3D excitons with spin-orbit-split levels. BaCuTeF has forbidden lowest-energy optical transitions which extends its transparency range. BaCuChF surfaces oxidize when exposed to air, but can be protected using Ch capping layers. Polycrystalline BaCuSeF thin films have a 4.85 eV work function, a 0.11 eV hole injection barrier into ZnPc, and 0.00 eV valence band offset with ZnTe. BaCuSeF should have s similar band offset and similar interfacial properties with CdTe and Cu(InGa)Se2, and BaCuSF should have no valence band offset with Cu2ZnSnS4, according to the transitivity rule. Therefore, BaCuSeF is suitable for applications as a p-layer in organic light-emitting diodes, p-i-n double-heterojunction and tandem chalcogenide solar cells.

Composition dependence of band alignments in GaxIn1-xAsySb1-y heterojunctions lattice matched to GaSb and InAs

NASA Astrophysics Data System (ADS)

Shim, Kyurhee

2013-11-01

A theoretical model utilizing a universal tight binding method and a correlated function expansion technique is presented to calculate the valence band maximum (VBM) and the conduction band minimum (CBM) of the binary (GaAs, InAS, GaSb, and InSb) and quaternary alloy GaxIn1-xAsySb1-y systems. By organizing the relative positions of the VBM and CBM between semiconductors, the band alignments and band types in the heterojunctions are determined. A straddling (type-I) band alignment in InAs/GaAs, InSb/GaAs, and GaSb/InSb, staggered (type-II) band alignment in GaSb/GaAs, and broken (type-III) band alignment in InSb/InAs and InAs/GaSb are found respectively. In addition, the compositional variations of VBM, CBM, valence band offset, conduction band offset, and band type for the alloy GaxIn1-xAsySb1-y lattice matched on GaSb and InAs are obtained as increasing the composition x. A pronounced upward bowing for the VBM and a very slight upward bowing (almost linear) for CBM are found, respectively. By controlling the compositions (x, y), band type transitions occur. The GaxIn1-xAsySb1-y heterojunctions lattice matched to GaSb changes their band types from type-III at x ˜0→ to type-II at x = 0.07, and → to type-I at x = 0.38. In contrast, the GaxIn1-xAsySb1-y heterojunctions lattice matched to InAs changes their band types from type-II x ˜0→ to type-III at x = 0.32. Reasonable agreement is obtained between our theoretical results and existing experimental data.

Understanding the interfacial properties of graphene-based materials/BiOI heterostructures by DFT calculations

NASA Astrophysics Data System (ADS)

Dai, Wen-Wu; Zhao, Zong-Yan

2017-06-01

Heterostructure constructing is a feasible and powerful strategy to enhance the performance of photocatalysts, because they can be tailored to have desirable photo-electronics properties and couple distinct advantageous of components. As a novel layered photocatalyst, the main drawback of BiOI is the low edge position of the conduction band. To address this problem, it is meaningful to find materials that possess suitable band gap, proper band edge position, and high mobility of carrier to combine with BiOI to form hetertrostructure. In this study, graphene-based materials (including: graphene, graphene oxide, and g-C3N4) were chosen as candidates to achieve this purpose. The charge transfer, interface interaction, and band offsets are focused on and analyzed in detail by DFT calculations. Results indicated that graphene-based materials and BiOI were in contact and formed van der Waals heterostructures. The valence and conduction band edge positions of graphene oxide, g-C3N4 and BiOI changed with the Fermi level and formed the standard type-II heterojunction. In addition, the overall analysis of charge density difference, Mulliken population, and band offsets indicated that the internal electric field is facilitate for the separation of photo-generated electron-hole pairs, which means these heterostructures can enhance the photocatalytic efficiency of BiOI. Thus, BiOI combines with 2D materials to construct heterostructure not only make use of the unique high electron mobility, but also can adjust the position of energy bands and promote the separation of photo-generated carriers, which provide useful hints for the applications in photocatalysis.

Modification of the band offset in boronitrene

NASA Astrophysics Data System (ADS)

Obodo, K. O.; Andrew, R. C.; Chetty, N.

2011-10-01

Using density functional methods within the generalized gradient approximation implemented in the Quantum Espresso codes, we modify the band offset in a single layer of boronitrene by substituting a double line of carbon atoms. This effectively introduces a line of dipoles at the interface. We considered various junctions of this system within the zigzag and armchair orientations. Our results show that the “zigzag-short” structure is energetically most stable, with a formation energy of 0.502 eV and with a band offset of 1.51 eV. The “zigzag-long” structure has a band offset of 1.99 eV. The armchair structures are nonpolar, while the zigzag-single structures show a charge accumulation for the C-substituted B and charge depletion for the C-substituted N at the junction. Consequently there is no shifting of the bands.

Band alignment at the CdS/FeS2 interface based on the first-principles calculation

NASA Astrophysics Data System (ADS)

Ichimura, Masaya; Kawai, Shoichi

2015-03-01

FeS2 is potentially well-suited for the absorber layer of a thin-film solar cell. Since it usually has p-type conductivity, a pn heterojunction cell can be fabricated by combining it with an n-type material. In this work, the band alignment in the heterostructure based on FeS2 is investigated on the basis of the first-principles calculation. CdS, the most popular buffer-layer material for thin-film solar cells, is selected as the partner in the heterostructure. The results indicate that there is a large conduction band offset (0.65 eV) at the interface, which will hinder the flow of photogenerated electrons from FeS2 to CdS. Thus an n-type material with the conduction band minimum positioned lower than that of CdS will be preferable as the partner in the heterostructure.

Enhanced emission and photoconductivity due to photo-induced charge transfer from Au nanoislands to ZnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Shang-Hsuan; Chan, Ching-Hsiang; Liang, Ching-Tarng

2016-01-25

We report systematic studies based on photoluminescence, Hall, and photoconductivity measurements together with theoretical modeling in order to identify mechanisms for the photo-induced charge transfer effects in ZnO thin film incorporated with the Au nano-islands (AuNIs). Significant enhancement of near band edge emission and improvement in conductivity of ZnO/AuNIs samples after illumination are observed, which are attributed to the photo-induced hot electrons in Au which are then transferred into the conduction band of ZnO as long as the excitation energy is higher than the offset between the ZnO conduction-band minimum and Au Fermi level. Our experimental results are consistent withmore » the general features predicted by first principles calculations.« less

Band alignment of ZnO/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xinke, E-mail: xkliu@szu.edu.cn, E-mail: liuwj@szu.edu.cn; He, Jiazhu; Chen, Le

2016-08-15

The energy band alignment between ZnO and multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the ZnO/ML-MoS{sub 2} interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF{sub 3} plasma treatment, the band alignment of the ZnO/ML-MoS{sub 2} interface hasmore » been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F.« less

Theoretical studies on band structure and optical gain of GaInAsN/GaAs /GaAs cylindrical quantum dot

NASA Astrophysics Data System (ADS)

Mal, Indranil; Samajdar, Dip Prakash; John Peter, A.

2018-07-01

Electronic band structure, effective masses, band offsets and optical gain of Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot systems are investigated using 10 band k·p Hamiltonian for various nitrogen and indium concentrations. The calculations include the effects of strain generated due to the lattice mismatch and the effective band gap of GaInAsN/GaAs heterostructures. The variation of conduction band, light hole and heavy hole band offsets with indium and nitrogen compositions in the alloy are obtained. The band structure of Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot is found in the crystal directions Δ (100) and Λ (111) using 10 band k·p Hamiltonian. The optical gain of the cylindrical quantum dot structures as functions of surface carrier concentration and the dot radius is investigated. Our results show that the tensile strain of 1.34% generates a band gap of 0.59 eV and the compressive strain of 2.2% produces a band gap of 1.28 eV and the introduction of N atoms has no effect on the spin orbit split off band. The variation of optical gain with the dot size and the carrier concentration indicates that the optical gain increases with the decrease in the radius of the quantum dot. The results may be useful for the potential applications in optical devices.

Valence-band offsets of CoTiSb/In 0.53Ga 0.47As and CoTiSb/In 0.52Al 0.48As heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harrington, S. D.; Sharan, A.; Rice, A. D.

2017-08-11

The valence-band offsets, ΔE v, between semiconducting half-Heusler compound CoTiSb and lattice-matched III-V In 0.53Ga 0.47As and In 0.52Al 0.48As heterojunction interfaces have been measured using X-ray photoemission spectroscopy (XPS). These interfaces were formed using molecular beam epitaxy and transferred in situ for XPS measurements. Valence-band offsets of 0.30 eV and 0.58 eV were measured for CoTiSb/In 0.53Ga 0.47As and CoTiSb/In 0.52Al 0.48As, respectively. By combining these measurements with previously reported XPS ΔE v (In 0.53Ga 0.47As/In 0.52Al 0.48As) data, the results suggest that band offset transitivity is satisfied. In addition, the film growth order of the interface between CoTiSbmore » and In 0.53Ga 0.47As is explored and does not seem to affect the band offsets. Finally, the band alignments of CoTiSb with GaAs, AlAs, and InAs are calculated using the density function theory with the HSE06 hybrid functional and applied to predict the band alignment of CoTiSb with In 0.53Ga 0.47As and In 0.52Al 0.48As. As a result, good agreement is found between the calculated valence-band offsets and those determined from XPS.« less

First-principles investigation of band offsets and dielectric properties of Silicon-Silicon Nitride interfaces

NASA Astrophysics Data System (ADS)

Pham, Tuan Anh; Li, Tianshu; Gygi, Francois; Galli, Giulia

2011-03-01

Silicon Nitride (Si3N4) is a possible candidate material to replace or be alloyed with SiO2 to form high-K dielectric films on Si substrates, so as to help prevent leakage currents in modern CMOS transistors. Building on our previous work on dielectric properties of crystalline and amorphous Si3N4 slabs, we present an analysis of the band offsets and dielectric properties of crystalline-Si/amorphous Si3N4 interfaces based on first principles calculations. We discuss shortcomings of the conventional bulk-plus line up approach in band offset calculations for systems with an amorphous component, and we present the results of band offsets obtained from calculations of local density of states. Finally, we describe the role of bonding configurations in determining band edges and dielectric constants at the interface. We acknowledge financial support from Intel Corporation.

Determination of a natural valence-band offset - The case of HgTe and CdTe

NASA Technical Reports Server (NTRS)

Shih, C. K.; Spicer, W. E.

1987-01-01

A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

Growth of non-polar and semi-polar gallium nitride with plasma assisted molecular beam epitaxy: Relatonships between film microstructure, reciprocal lattice and transport properties

NASA Astrophysics Data System (ADS)

McLaurin, Melvin Barker

2007-12-01

The group-III nitrides exhibit significant spontaneous and piezoelectric polarization parallel to the [0001] direction, which are manifested as sheet charges at heterointerfaces. While polarization can be used to engineer the band-structure of a device, internal electric fields generated by polarization discontinuities can also have a number of negative consequences for the performance and design of structures utilizing heterojunctions. The most direct route to polarization free group-III nitride devices is growth on either one of the "non-polar" prismatic faces of the crystal (m-plane (1010) or a-plane (1120)) where the [0001] direction lies in the plane of any heterointerfaces. This dissertation focuses on the growth of non-polar and semi-polar GaN by MBE and on how the dominant feature of the defect structure of non-polar and semi-polar films, basal plane stacking faults, determines the properties of the reciprocal lattice and electrical transport of the films. The first part is a survey of the MBE growth of the two non-polar planes (10 10) and (1120) and three semi-polar planes (1011), (1013) and {11 22} investigated in this work. The relationship between basal plane stacking faults and broadening of the reciprocal lattice is discussed and measured with X-ray diffraction using a lateral-variant of the Williamson-Hall analysis. The electrical properties of m-plane films are investigated using Hall-effect and TLM measurements. Anisotropic mobilities were observed for both electrons and holes along with record p-type conductivities and hole concentrations. By comparison to both inversion-domain free c-plane films and stacking-fault-free free-standing m-plane GaN wafers it was determined that basal plane stacking faults were the source of both the enhanced p-type conductivity and the anisotropic carrier mobilities. Finally, we propose a possible source of anisotropic mobilities and enhanced p-type conduction in faulted films is proposed. Basal plane stacking faults are treated as heterostructures of the wurtzite and zincblende polytypes of GaN. The band parameter and polarization differences between the polytypes result in large offsets in both the conduction and valence band edges at the stacking faults. Anisotropy results from scattering from the band-edge offsets and enhanced mobility from screening due to charge accumulation at these band edge offsets.

Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

DOE PAGES

Gao, Xujiao; Huang, Andy; Kerr, Bert

2017-10-25

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carriermore » recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.« less

Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Xujiao; Huang, Andy; Kerr, Bert

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carriermore » recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.« less

Preliminary analysis toward GOSAT-2 new products, proxy-based XCH4 and SIF, using GOSAT data

NASA Astrophysics Data System (ADS)

Oshio, H.; Yoshida, Y.; Matsunaga, T.

2017-12-01

The Greenhouse gases Observing SATellite (GOSAT) has been operating for more than eight years. As a successor mission to the GOSAT, GOSAT-2 is planned to be launched in FY2018. In addition to the full-physics based dry air mole fractions of carbon dioxide, methane, water vapor, and carbon monoxide (XCO2, XCH4, XH2O, and XCO) products, we are planning to provide the proxy-based XCH4 and solar induced chlorophyll fluorescence (SIF) as a new product. XCH4 and XCO2 are retrieved from GOSAT CH4 1.67 μm band and CO2 1.6 μm band, respectively, under the clear-sky assumption, and their ratio is compared with TCCON data. As expected, most of the cloud and aerosol related errors are counteracted. During this retrieval, XH2O is simultaneously retrieved with XCO2. XCO2 and XH2O are also retrieved from CO2 2.08 μm band under the clear-sky assumption. Difference between Xgas retrieved from different wavelength domains is expected to be useful as cloud and aerosol information because the difference reflects the degree of optical path variation caused by clouds and aerosols. XCO2 ratio and XH2O ratio are compared to the cloud and aerosol information derived by Cloud and Aerosol Imager (CAI) onboarded GOSAT. SIF is retrieved using Fraunhofer lines near O2 A-band by the same method as Frankenberg et al. (2011). For GOSAT, correction of artifact signal (zero-level offset caused by non-linearity of the analog circuit in the spectrometer) is required to obtain SIF (retrieved signal = SIF + zero-level offset). The zero-level offset can be evaluated from the retrieved signal over the areas where the value of SIF is expected to be zero. Although it is currently unknown that such correction is required for GOSAT-2 SIF retrieval, SIF was retrieved from GOSAT data and zero-level offset correction was tested. We investigated the zero-level offset for clouds and bare soils and confirmed its applicability to the offset correction. Zero-level offset correction was then conducted while considering its temporal change and dependence on the observed radiance. Validity of the derived SIF was investigated through comparison with SIF derived by numerical model.

Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.

PubMed

Kim, Kwangeun; Ryu, Jae Ha; Kim, Jisoo; Cho, Sang June; Liu, Dong; Park, Jeongpil; Lee, In-Kyu; Moody, Baxter; Zhou, Weidong; Albrecht, John; Ma, Zhenqiang

2017-05-24

Understanding the band bending at the interface of GaN/dielectric under different surface treatment conditions is critically important for device design, device performance, and device reliability. The effects of ultraviolet/ozone (UV/O 3 ) treatment of the GaN surface on the energy band bending of atomic-layer-deposition (ALD) Al 2 O 3 coated Ga-polar GaN were studied. The UV/O 3 treatment and post-ALD anneal can be used to effectively vary the band bending, the valence band offset, conduction band offset, and the interface dipole at the Al 2 O 3 /GaN interfaces. The UV/O 3 treatment increases the surface energy of the Ga-polar GaN, improves the uniformity of Al 2 O 3 deposition, and changes the amount of trapped charges in the ALD layer. The positively charged surface states formed by the UV/O 3 treatment-induced surface factors externally screen the effect of polarization charges in the GaN, in effect, determining the eventual energy band bending at the Al 2 O 3 /GaN interfaces. An optimal UV/O 3 treatment condition also exists for realizing the "best" interface conditions. The study of UV/O 3 treatment effect on the band alignments at the dielectric/III-nitride interfaces will be valuable for applications of transistors, light-emitting diodes, and photovoltaics.

Contact Selectivity Engineering in a 2 μm Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8.

PubMed

Xue, Muyu; Islam, Raisul; Meng, Andrew C; Lyu, Zheng; Lu, Ching-Ying; Tae, Christian; Braun, Michael R; Zang, Kai; McIntyre, Paul C; Kamins, Theodore I; Saraswat, Krishna C; Harris, James S

2017-12-06

In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an ∼13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 μm is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiO x ) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiO x ), a well-known material for an electron-selective contact interlayer. Key parameters including V oc and J sc also show different degrees of enhancement if single (NiO x only) or double (both NiO x and TiO x ) carrier-selective contacts are integrated. The fabrication process for TiO x and NiO x layer integration is scalable and shows good compatibility with the device.

Temperature dependent electron delocalization in CdSe/CdS type-I core-shell systems: An insight from scanning tunneling spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kundu, Biswajit; Chakrabarti, Sudipto; Pal, Amlan J., E-mail: sspajp@iacs.res.in

2016-03-14

Core-shell nanocrystals having a type-I band-alignment confine charge carriers to the core. In this work, we choose CdSe/CdS core-shell nano-heterostructures that evidence confinement of holes only. Such a selective confinement occurs in the core-shell nanocrystals due to a low energy-offset of conduction band (CB) edges resulting in delocalization of electrons and thus a decrease in the conduction band-edge. Since the delocalization occurs through a thermal assistance, we study temperature dependence of selective delocalization process through scanning tunneling spectroscopy. From the density of states (DOS), we observe that the electrons are confined to the core at low temperatures. Above a certainmore » temperature, they become delocalized up to the shell leading to a decrease in the CB of the core-shell system due to widening of quantum confinement effect. With holes remaining confined to the core due to a large offset in the valence band (VB), we record the topography of the core-shell nanocrystals by probing their CB and VB edges separately. The topographies recorded at different temperatures representing wave-functions of electrons and holes corresponded to the results obtained from the DOS spectra. The results evidence temperature-dependent wave-function delocalization of one-type of carriers up to the shell layer in core-shell nano-heterostructures.« less

Silicon quantum dots embedded in a SiO2 matrix: From structural study to carrier transport properties

NASA Astrophysics Data System (ADS)

Garcia-Castello, Nuria; Illera, Sergio; Guerra, Roberto; Prades, Joan Daniel; Ossicini, Stefano; Cirera, Albert

2013-08-01

We study the details of electronic transport related to the atomistic structure of silicon quantum dots embedded in a silicon dioxide matrix using ab initio calculations of the density of states. Several structural and composition features of quantum dots (QDs), such as diameter and amorphization level, are studied and correlated with transport under transfer Hamiltonian formalism. The current is strongly dependent on the QD density of states and on the conduction gap, both dependent on the dot diameter. In particular, as size increases, the available states inside the QD increase, while the QD band gap decreases due to relaxation of quantum confinement. Both effects contribute to increasing the current with the dot size. Besides, valence band offset between the band edges of the QD and the silica, and conduction band offset in a minor grade, increases with the QD diameter up to the theoretical value corresponding to planar heterostructures, thus decreasing the tunneling transmission probability and hence the total current. We discuss the influence of these parameters on electron and hole transport, evidencing a correlation between the electron (hole) barrier value and the electron (hole) current, and obtaining a general enhancement of the electron (hole) transport for larger (smaller) QD. Finally, we show that crystalline and amorphous structures exhibit enhanced probability of hole and electron current, respectively.

Electrical and band structural analyses of Ti1-x Al x O y films grown by atomic layer deposition on p-type GaAs

NASA Astrophysics Data System (ADS)

An, Youngseo; Mahata, Chandreswar; Lee, Changmin; Choi, Sungho; Byun, Young-Chul; Kang, Yu-Seon; Lee, Taeyoon; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub

2015-10-01

Amorphous Ti1-x Al x O y films in the Ti-oxide-rich regime (x  <  0.5) were deposited on p-type GaAs via atomic layer deposition with titanium isopropoxide, trimethylaluminum, and H2O precursor chemistry. The electrical properties and energy band alignments were examined for the resulting materials with their underlying substrates, and significant frequency dispersion was observed in the accumulation region of the Ti-oxide-rich Ti1-x Al x O y films. Although a further reduction in the frequency dispersion and leakage current (under gate electron injection) could be somewhat achieved through a greater addition of Al-oxide in the Ti1-x Al x O y film, the simultaneous decrease in the dielectric constant proved problematic in finding an optimal composition for application as a gate dielectric on GaAs. The spectroscopic band alignment measurements of the Ti-oxide-rich Ti1-x Al x O y films indicated that the band gaps had a rather slow increase with the addition of Al-oxide, which was primarily compensated for by an increase in the valance band offset, while a nearly-constant conduction band offset with a negative electron barrier height was maintained.

An all-perovskite p-n junction based on transparent conducting p -La 1-x Sr x CrO 3 epitaxial layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yingge; Li, Chen; Zhang, Kelvin H. L.

2017-08-07

Transparent, conducting p -La 1-x Sr x CrO 3 epitaxial layers were deposited on Nb-doped SrTiO 3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

DTIC Science & Technology

2016-02-04

Metal insulator semiconductor AlGaN /GaN high electron mobility transistors (MISHEMTs) are promising for power device applications due to a lower leakage...current than the conventional Schottky AlGaN/GaN HEMTs.1–3 Among a large number of insulator materials, an Al2O3 dielectric layer, deposited by...atomic layer deposition (ALD), is often employed as the gate insulator because of a large band gap (and the resultant high conduction band offset on

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.

PubMed

Sang, Ling; Zhu, Qin Sheng; Yang, Shao Yan; Liu, Gui Peng; Li, Hui Jie; Wei, Hong Yuan; Jiao, Chun Mei; Liu, Shu Man; Wang, Zhan Guo; Zhou, Xiao Wei; Mao, Wei; Hao, Yue; Shen, Bo

2014-01-01

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.

Reduced energy offset via substitutional doping for efficient organic/inorganic hybrid solar cells.

PubMed

Jin, Xiao; Sun, Weifu; Zhang, Qin; Ruan, Kelian; Cheng, Yuanyuan; Xu, Haijiao; Xu, Zhongyuan; Li, Qinghua

2015-06-01

Charge carrier transport in bulk heterojunction that is central to the device performance of solar cells is sensitively dependent on the energy level alignment of acceptor and donor. However, the effect of energy level regulation induced by nickel ions on the primary photoexcited electron transfer and the performance of P3HT/TiO₂ hybrid solar cells remains being poorly understood and rarely studied. Here we demonstrate that the introduction of the versatile nickel ions into TiO₂ nanocrystals can significantly elevate the conduction and valence band energy levels of the acceptor, thus resulting in a remarkable reduction of energy level offset between the conduction band of acceptor and lowest unoccupied molecular orbital of donor. By applying transient photoluminescence and femtosecond transient absorption spectroscopies, we demonstrate that the electron transfer becomes more competitive after incorporating nickel ions. In particular, the electron transfer life time is shortened from 30.2 to 16.7 ps, i.e., more than 44% faster than pure TiO₂ acceptor, thus leading to a notable increase of power conversion efficiency in organic/inorganic hybrid solar cells. This work underscores the promising virtue of engineering the reduction of 'excess' energy offset to accelerate electron transport and demonstrates the potential of nickel ions in applications of solar energy conversion and photon detectors.

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

NASA Astrophysics Data System (ADS)

Pavel, Akeed A.; Khan, Mehjabeen A.; Kirawanich, Phumin; Islam, N. E.

2008-10-01

A methodology to simulate memory structures with metal nanocrystal islands embedded as floating gate in a high-κ dielectric material for simultaneous enhancement of programming speed and retention time is presented. The computational concept is based on a model for charge transport in nano-scaled structures presented earlier, where quantum mechanical tunneling is defined through the wave impedance that is analogous to the transmission line theory. The effects of substrate-tunnel dielectric conduction band offset and metal work function on the tunneling current that determines the programming speed and retention time is demonstrated. Simulation results confirm that a high-κ dielectric material can increase programming current due to its lower conduction band offset with the substrate and also can be effectively integrated with suitable embedded metal nanocrystals having high work function for efficient data retention. A nano-memory cell designed with silver (Ag) nanocrystals embedded in Al 2O 3 has been compared with similar structure consisting of Si nanocrystals in SiO 2 to validate the concept.

Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui

2018-01-01

The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

Band alignment of SiO2/(AlxGa1-x)2O3 (0 ≤ x ≤ 0.49) determined by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Feng, Zhaoqing; Feng, Qian; Zhang, Jincheng; Li, Xiang; Li, Fuguo; Huang, Lu; Chen, Hong-Yan; Lu, Hong-Liang; Hao, Yue

2018-03-01

In this work, we report the investigation of the band alignment of SiO2/(AlxGa1-x)2O3 (0 ≤ x ≤ 0.49) utilizing the high resolution X-ray photoelectron spectroscopy (XPS) measurements. The single crystallinity and orientation of β-(AlxGa1-x)2O3 films grown on sapphire by pulsed laser deposition were studied with the high resolution X-ray diffraction. The Ga 2p3/2 and Si 2p core-level spectra as well as valence band spectra were used in the analysis of band alignment. As the mole fraction x of Al increases from 0 to 0.49, the bandgap and conduction band offset values of SiO2/(AlxGa1-x)2O3 increases from 4.9 to 5.6 eV and from 1.5 to 2.1 eV, respectively, while that of valence band offset decreases from 2.2 to 0.9 eV. From the results obtained, the energy band diagram of the studied SiO2/(AlxGa1-x)2O3 (0 ≤ x ≤ 0.49) interfaces is found to be of type I. Energy band lineups of SiO2/(AlxGa1-x)2O3 were thus determined which can be used as for Ga2O3 based power device technology.

Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors: Effect of chlorination on the TlBr band edges for radiation detectors

DOE PAGES

Varley, J. B.; Conway, A. M.; Voss, L. F.; ...

2015-02-09

Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction

NASA Astrophysics Data System (ADS)

Goel, Neeraj; Kumar, Rahul; Mishra, Monu; Gupta, Govind; Kumar, Mahesh

2018-06-01

To understand the different mechanism occurring at the MoS2-silicon interface, we have fabricated a MoS2/Si heterojunction by exfoliating MoS2 on top of the silicon substrate. Raman spectroscopy and atomic force microscopy (AFM) measurement expose the signature of few-layers in the deposited MoS2 flake. Herein, the temperature dependence of the energy barrier and carrier density at the MoS2/Si heterojunction has been extensively investigated. Furthermore, to study band alignment at the MoS2/Si interface, we have calculated a valence band offset of 0.66 ± 0.17 eV and a conduction band offset of 0.42 ± 0.17 eV using X-ray and Ultraviolet photoelectron spectroscopy. We determined a type-II band alignment at the interface which is very conducive for the transport of photoexcited carriers. As a proof-of-concept application, we extend our analysis of the photovoltaic behavior of the MoS2/Si heterojunction. This work provides not only a comparative study between MoS2/p-Si and MoS2/n-Si heterojunctions but also paves the way to engineer the properties of the interface for the future integration of MoS2 with silicon.

VizieR Online Data Catalog: The magnetic field of L1544. I. NIR data (Clemens+, 2016)

NASA Astrophysics Data System (ADS)

Clemens, D. P.; Tassis, K.; Goldsmith, P. F.

2017-04-01

NIR imaging polarimetric observations of L1544 were conducted on the UT nights of 2013 January 20, 2015 October 27 and 31, 2015 November 1 and 2, and 2016 January 27 and 31 using the Mimir instrument on the 1.83m Perkins Telescope, located outside Flagstaff, Arizona. Six pointing centers ("fields") were selected toward a Center direction (RAJ200=05:04:16.6, DEJ2000=+25:10:48), the four equatorial NSEW directions offset by 6 arcmin from the Center, and one field to the NW offset mostly diagonally by about 10.9 arcmin. In addition, the AllWISE (Cutri+ 2013, II/328) catalog entries for the field shown in Figure 1 were fetched, resulting in 3616 stars with a detection in at least the WISE W1 (3.6um) band or W2 (4.5um) band. These were positionally matched to the H-band catalog, yielding 1262 matches. The properties of the 450 H-band stars without WISE star matches and the WISE stars without H-band star matches were similar in being fainter than the subset of stars with H-to-WISE matches. The combined data set of 1712 stars is listed in Table 1. (1 data file).

Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shetty, Satish; Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in

2016-02-07

We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures—“8 × 8” and “8/3 × 8/3”—form, and further nitridation leads to 1 × 1 stoichiometric silicon nitride. The interface is seen to have the Si{sup 1+} and Si{sup 3+} states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses.more » The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending.« less

Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

OShea, J.J.; Brazel, E.G.; Rubin, M.E.

1997-07-01

We report an extensive investigation of semiconductor band-structure effects in single-barrier Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0{le}x{le}1). The initial ({Gamma}) BEES thresholds for Al{sub x}Ga{sub 1{minus}x}As single barriers with 0{le}x{le}0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements atmore » 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime ({ital x}{gt}0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al{sub x}Ga{sub 1{minus}x}As {ital X} valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al{sub x}Ga{sub 1{minus}x}As interface produces a significant fraction of this{ital X} valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al{sub x}Ga{sub 1{minus}x}As {Gamma}, {ital L}, and {ital X} points yields good agreement over the entire composition range. {copyright} {ital 1997} {ital The American Physical Society}« less

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Lee, Ching Ting; Chang, Edward Yi

2018-05-01

A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance–voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal–oxide semiconductor applications.

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

PubMed

Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

2017-12-01

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

Interface band alignment in high-k gate stacks

NASA Astrophysics Data System (ADS)

Eric, Bersch; Hartlieb, P.

2005-03-01

In order to successfully implement alternate high-K dielectric materials into MOS structures, the interface properties of MOS gate stacks must be better understood. Dipoles that may form at the metal/dielectric and dielectric/semiconductor interfaces make the band offsets difficult to predict. We have measured the conduction and valence band densities of states for a variety MOS stacks using in situ using inverse photoemission (IPE) and photoemission spectroscopy (PES), respectively. Results obtained from clean and metallized (with Ru or Al) HfO2/Si, SiO2/Si and mixed silicate films will be presented. IPE indicates a shift of the conduction band minimum (CBM) to higher energy (i.e. away from EF) with increasing SiO2. The effect of metallization on the location of band edges depends upon the metal species. The addition of N to the dielectrics shifts the CBM in a way that is thickness dependent. Possible mechanisms for these observed effects will be discussed.

Temperature-dependent internal photoemission probe for band parameters

NASA Astrophysics Data System (ADS)

Lao, Yan-Feng; Perera, A. G. Unil

2012-11-01

The temperature-dependent characteristic of band offsets at the heterojunction interface was studied by an internal photoemission (IPE) method. In contrast to the traditional Fowler method independent of the temperature (T), this method takes into account carrier thermalization and carrier/dopant-induced band-renormalization and band-tailing effects, and thus measures the band-offset parameter at different temperatures. Despite intensive studies in the past few decades, the T dependence of this key band parameter is still not well understood. Re-examining a p-type doped GaAs emitter/undoped AlxGa1-xAs barrier heterojunction system disclosed its previously ignored T dependency in the valence-band offset, with a variation up to ˜-10-4 eV/K in order to accommodate the difference in the T-dependent band gaps between GaAs and AlGaAs. Through determining the Fermi energy level (Ef), IPE is able to distinguish the impurity (IB) and valence bands (VB) of extrinsic semiconductors. One important example is to determine Ef of dilute magnetic semiconductors such as GaMnAs, and to understand whether it is in the IB or VB.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Conway, A. M.; Voss, L. F.

Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties

NASA Astrophysics Data System (ADS)

Khan, Muhammad Arif; Wahab, Yussof; Muhammad, Rosnita; Tahir, Muhammad; Sakrani, Samsudi

2018-03-01

Development of controlled growth and vertically aligned ZnO/CuO core-shell heterojunction nanowires (NWs) with large area by a catalyst free vapor deposition and oxidation approach has been investigated. Structural characterization reveals successful fabrication of a core ZnO nanowire having single crystalline hexagonal wurtzite structure along [002] direction and CuO nanostructure shell with thickness (8-10 nm) having polycrystalline monoclinic structure. The optical property analysis suggests that the reflectance spectrum of ZnO/CuO heterostructure nanowires is decreased by 18% in the visible range, which correspondingly shows high absorption in this region as compared to pristine ZnO nanowires. The current-voltage (I-V) characteristics of core-shell heterojunction nanowires measured by conductive atomic force microscopy (C-AFM) shows excellent rectifying behavior, which indicates the characteristics of a good p-n junction. The high-resolution transmission electron microscopy (HRTEM) has confirmed the sharp junction interface between the core-shell heterojunction nanowire arrays. The valence band offset and conduction band offset at ZnO/CuO heterointerfaces are measured to be 2.4 ± 0.05 and 0.23 ± 0.005 eV respectively, using X-ray photoelectron spectroscopy (XPS) and a type-II band alignment structure is found. The results of this study contribute to the development of new advanced device heterostructures for solar energy conversion and optoelectronics applications.

Quasiparticle band offset at the (001) interface and band gaps in ultrathin superlattices of GaAs-AlAs heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, S.B.; Cohen, M.L.; Louie, S.G.

1990-05-15

A newly developed first-principles quasiparticle theory is used to calculate the band offset at the (001) interface and band gaps in 1{times}1 and 2{times}2 superlattices of GaAs-AlAs heterojunctions. We find a sizable many-body contribution to the valence-band offset which is dominated by the many-body corrections to bulk GaAs and AlAs quasiparticle energies. The resultant offset {Delta}{ital E}{sub {ital v}}=0.53{plus minus}0.05 eV is in good agreement with the recent experimental values of 0.50--0.56 eV. Our calculated direct band gaps for ultrathin superlattices are also in good agreement with experiment. The {ital X}{sub 1{ital c}}-derived state at point {bar {Gamma}}, is however,more » above the {Gamma}{sub 1{ital c}}-derived state for both the 1{times}1 and 2{times}2 lattices, contrary to results obtained under the virtual-crystal approximation (a limiting case for the Kronig-Penny model) and some previous local-density-approximation (corrected) calculations. The differences are explained in terms of atomic-scale localizations and many-body effects. Oscillator strengths and the effects of disorder on the spectra are discussed.« less

Trends on band alignments: Validity of Anderson's rule in SnS2- and SnSe2-based van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Koda, Daniel S.; Bechstedt, Friedhelm; Marques, Marcelo; Teles, Lara K.

2018-04-01

Van der Waals (vdW) heterostructures are promising candidates for building blocks in novel electronic and optoelectronic devices with tailored properties, since their electronic action is dominated by the band alignments upon their contact. In this work, we analyze 10 vdW heterobilayers based on tin dichalcogenides by first-principles calculations. Structural studies show that all systems are stable, and that commensurability leads to smaller interlayer distances. Using hybrid functional calculations, we derive electronic properties and band alignments for all the heterosystems and isolated two-dimensional (2D) crystals. Natural band offsets are derived from calculated electron affinities and ionization energies of 11 freestanding 2D crystals. They are compared with band alignments in true heterojunctions, using a quantum mechanical criterion, and available experimental data. For the hBN/SnSe 2 system, we show that hBN suffers an increase in band gap, while leaving almost unchanged the electronic properties of SnSe2. Similarly, MX2 (M = Mo, W; X = S, Se) over SnX2 preserve the natural discontinuities from each side of the heterobilayer. Significant charge transfer occurs in junctions with graphene, which becomes p-doped and forms an Ohmic contact with SnX2. Zirconium and hafnium dichalcogenides display stronger interlayer interactions, leading to larger shifts in band alignments with tin dichalcogenides. Significant orbital overlap is found, which creates zero conduction band offset systems. The validity of the Anderson electron affinity rule is discussed. Failures of this model are traced back to interlayer interaction, band hybridization, and quantum dipoles. The systematic work sheds light on interfacial engineering for future vdW electronic and optoelectronic devices.

Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

NASA Astrophysics Data System (ADS)

Yao, Z. Q.; He, B.; Zhang, L.; Zhuang, C. Q.; Ng, T. W.; Liu, S. L.; Vogel, M.; Kumar, A.; Zhang, W. J.; Lee, C. S.; Lee, S. T.; Jiang, X.

2012-02-01

The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (˜3.46-3.87 eV); Hall measurements verify the highest hole mobilities (˜11.3-39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ˜8.0 × 102 and field effect mobility of 0.97 cm2/Vs.

Investigation of the interface characteristics of Y2O3/GaAs under biaxial strain, triaxial strain, and non-strain conditions

NASA Astrophysics Data System (ADS)

Shi, Li-Bin; Liu, Xu-Yang; Dong, Hai-Kuan

2016-09-01

We investigate the interface behaviors of Y2O3/GaAs under biaxial strain, triaxial strain, and non-strain conditions. This study is performed by first principles calculations based on density functional theory (DFT). First of all, the biaxial strain is realized by changing the lattice constants in ab plane. Averaged electrostatic potential (AEP) is aligned by establishing Y2O3 and GaAs (110) surfaces. The band offsets of Y2O3/GaAs interface under biaxial strain are investigated by generalized gradient approximation and Heyd-Scuseria-Ernzerhof (HSE) functionals. The interface under biaxial strain is suitable for the design of metal oxide semiconductor (MOS) devices because the valence band offsets (VBO) and conduction band offsets (CBO) are larger than 1 eV. Second, the triaxial strain is applied to Y2O3/GaAs interface by synchronously changing the lattice constants in a, b, and c axis. The band gaps of Y2O3 and GaAs under triaxial strain are investigated by HSE functional. We compare the VBO and CBO under triaxial strain with those under biaxial strain. Third, in the absence of lattice strain, the formation energies, charge state switching levels, and migration barriers of native defects in Y2O3 are assessed. We investigate how they will affect the MOS device performance. It is found that VO+2 and Oi-2 play a very dangerous role in MOS devices. Finally, a direct tunneling leakage current model is established. The model is used to analyze current and voltage characteristics of the metal/Y2O3/GaAs.

Investigation of TM Band-to-band Registration Using the JSC Registration Processor

NASA Technical Reports Server (NTRS)

Yao, S. S.; Amis, M. L.

1984-01-01

The JSC registration processor performs scene-to-scene (or band-to-band) correlation based on edge images. The edge images are derived from a percentage of the edge pixels calculated from the raw scene data, excluding clouds and other extraneous data in the scene. Correlations are performed on patches (blocks) of the edge images, and the correlation peak location in each patch is estimated iteratively to fractional pixel location accuracy. Peak offset locations from all patches over the scene are then considered together, and a variety of tests are made to weed out outliers and other inconsistencies before a distortion model is assumed. Thus, the correlation peak offset locations in each patch indicate quantitatively how well the two TM bands register to each other over that patch of scene data. The average of these offsets indicate the overall accuracies of the band-to-band registration. The registration processor was also used to register one acquisition to another acquisition of multitemporal TM data acquired over the same ground track. Band 4 images from both acquisitions were correlated and an rms error of a fraction of a pixel was routinely obtained.

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

NASA Astrophysics Data System (ADS)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Su, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

2017-01-01

ZnO thin films were deposited on p-type GaN with a thin In0.17Al0.83N interlayer, forming double heterostructural diodes of n-ZnO/In0.17Al0.83N/p-GaN. The crystalline quality of the ZnO films was improved and its orientation was kept along < 70 7 bar 4 > that was perpendicular to (10 1 bar 1) plane. The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer. The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases. The valence-band offset and conduction-band offset between the ZnO and In0.17Al0.83N were determined to be -0.72 and 1.95 eV, respectively.

Interface energetics and atomic structure of epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} on Nb:SrTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Overmeere, Quentin, E-mail: quentin.vanovermeere@uclouvain.be, E-mail: john.d.baniecki@jp.fujitsu.com; Baniecki, John D., E-mail: quentin.vanovermeere@uclouvain.be, E-mail: john.d.baniecki@jp.fujitsu.com; Yamazaki, Takashi

2015-06-15

The energetics at oxide semiconductor/La{sub 1−x}Sr{sub x}CoO{sub 3} heterojunctions, including the respective alignment of the valence and conduction bands, govern charge transfer and have to be determined for the design of future La{sub 1−x}Sr{sub x}CoO{sub 3}-based devices. In this letter, the electronic and atomic structures of epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} on Nb-doped strontium titanate are revealed by scanning transmission electron microscopy, electron energy loss spectroscopy, and in situ x-ray and ultra violet photoelectron spectroscopies. For LaCoO{sub 3}, a valence band (VB) offset of 2.8 ± 0.1 eV is deduced. The large offset is attributed to the orbital contributions of the Co 3dmore » states to the VB maximum of the LaCoO{sub 3} thin films, with no evidence of interface dipole contributions. The sensitivity of the valence band orbital character to spin state ordering and oxygen vacancies is assessed using density functional theory.« less

Heteroepitaxial growth of ɛ-(AlxGa1-x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition

NASA Astrophysics Data System (ADS)

Tahara, Daisuke; Nishinaka, Hiroyuki; Morimoto, Shota; Yoshimoto, Masahiro

2018-04-01

In this study, ɛ-(AlxGa1-x)2O3 alloy films were grown on c-plane AlN templates by mist chemical vapor deposition. The Al content of two samples was determined by Rutherford backscattering analysis. The lattice constant of the ɛ-(AlxGa1-x)2O3 alloy films followed Vegard's law, and the Al contents of other samples were determined to be as high as x = 0.395 by Vegard's law. The direct bandgap was obtained in the range of 5.0-5.9 eV by transmittance measurements. The valence-band offset between ɛ-(Al0.395Ga0.605)2O3 and ɛ-Ga2O3 was analyzed to be 0.2 eV, and the conduction-band offset was calculated to be 0.7 eV by X-ray photoelectron spectroscopy. The ɛ-(AlxGa1-x)2O3/ɛ-Ga2O3 interface band discontinuity was type I. Our experimental results will be important for the actual application of ɛ-(AlxGa1-x)2O3/ɛ-Ga2O3 heterojunction devices.

Enhancement of capacitance benefit by drain offset structure in tunnel field-effect transistor circuit speed associated with tunneling probability increase

NASA Astrophysics Data System (ADS)

Asai, Hidehiro; Mori, Takahiro; Matsukawa, Takashi; Hattori, Junichi; Endo, Kazuhiko; Fukuda, Koichi

2018-04-01

The effect of a drain offset structure on the operation speed of a tunnel field-effect transistor (TFET) ring oscillator is investigated by technology computer-aided design (TCAD) simulation. We demonstrate that the reduction of gate-drain capacitance by the drain offset structure dramatically increases the operation speed of the ring oscillators. Interestingly, we find that this capacitance benefit to operation speed is enhanced by the increase in band-to-band tunneling probability. The “synergistic” speed enhancement by the drain offset structure and the tunneling rate increase will have promising application to the significant improvement of the operation speed of TFET circuits.

Low-energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure

NASA Astrophysics Data System (ADS)

Di Gaspare, L.; Capellini, G.; Chudoba, C.; Sebastiani, M.; Evangelisti, F.

1996-09-01

We apply a new experimental method for determining band lineups at the Ge/Si(100) heterostructure. This method uses a modern version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum, thus allowing a direct and precise determination of the band lineup. We find an offset of 0.36 ± 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism.

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

NASA Astrophysics Data System (ADS)

Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

2017-10-01

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

Time synchronization of new-generation BDS satellites using inter-satellite link measurements

NASA Astrophysics Data System (ADS)

Pan, Junyang; Hu, Xiaogong; Zhou, Shanshi; Tang, Chengpan; Guo, Rui; Zhu, Lingfeng; Tang, Guifeng; Hu, Guangming

2018-01-01

Autonomous satellite navigation is based on the ability of a Global Navigation Satellite System (GNSS), such as Beidou, to estimate orbits and clock parameters onboard satellites using Inter-Satellite Link (ISL) measurements instead of tracking data from a ground monitoring network. This paper focuses on the time synchronization of new-generation Beidou Navigation Satellite System (BDS) satellites equipped with an ISL payload. Two modes of Ka-band ISL measurements, Time Division Multiple Access (TDMA) mode and the continuous link mode, were used onboard these BDS satellites. Using a mathematical formulation for each measurement mode along with a derivation of the satellite clock offsets, geometric ranges from the dual one-way measurements were introduced. Then, pseudoranges and clock offsets were evaluated for the new-generation BDS satellites. The evaluation shows that the ranging accuracies of TDMA ISL and the continuous link are approximately 4 cm and 1 cm (root mean square, RMS), respectively. Both lead to ISL clock offset residuals of less than 0.3 ns (RMS). For further validation, time synchronization between these satellites to a ground control station keeping the systematic time in BDT was conducted using L-band Two-way Satellite Time Frequency Transfer (TWSTFT). System errors in the ISL measurements were calibrated by comparing the derived clock offsets with the TWSTFT. The standard deviations of the estimated ISL system errors are less than 0.3 ns, and the calibrated ISL clock parameters are consistent with that of the L-band TWSTFT. For the regional BDS network, the addition of ISL measurements for medium orbit (MEO) BDS satellites increased the clock tracking coverage by more than 40% for each orbital revolution. As a result, the clock predicting error for the satellite M1S was improved from 3.59 to 0.86 ns (RMS), and the predicting error of the satellite M2S was improved from 1.94 to 0.57 ns (RMS), which is a significant improvement by a factor of 3-4.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that atmore » free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.« less

VIIRS day-night band gain and offset determination and performance

NASA Astrophysics Data System (ADS)

Geis, J.; Florio, C.; Moyer, D.; Rausch, K.; De Luccia, F. J.

2012-09-01

On October 28th, 2011, the Visible-Infrared Imaging Radiometer Suite (VIIRS) was launched on-board the Suomi National Polar-orbiting Partnership (NPP) spacecraft. The instrument has 22 spectral bands: 14 reflective solar bands (RSB), 7 thermal emissive bands (TEB), and a Day Night Band (DNB). The DNB is a panchromatic, solar reflective band that provides visible through near infrared (IR) imagery of earth scenes with radiances spanning 7 orders of magnitude. In order to function over this large dynamic range, the DNB employs a focal plane array (FPA) consisting of three gain stages: the low gain stage (LGS), the medium gain stage (MGS), and the high gain stage (HGS). The final product generated from a DNB raw data record (RDR) is a radiance sensor data record (SDR). Generation of the SDR requires accurate knowledge of the dark offsets and gain coefficients for each DNB stage. These are measured on-orbit and stored in lookup tables (LUT) that are used during ground processing. This paper will discuss the details of the offset and gain measurement, data analysis methodologies, the operational LUT update process, and results to date including a first look at trending of these parameters over the early life of the instrument.

Wet Pretreatment-Induced Modification of Cu(In,Ga)Se2/Cd-Free ZnTiO Buffer Interface.

PubMed

Hwang, Suhwan; Larina, Liudmila; Lee, Hojin; Kim, Suncheul; Choi, Kyoung Soon; Jeon, Cheolho; Ahn, Byung Tae; Shin, Byungha

2018-06-20

We report a novel Cd-free ZnTiO buffer layer deposited by atomic layer deposition for Cu(In,Ga)Se 2 (CIGS) solar cells. Wet pretreatments of the CIGS absorbers with NH 4 OH, H 2 O, and/or aqueous solution of Cd 2+ ions were explored to improve the quality of the CIGS/ZnTiO interface, and their effects on the chemical state of the absorber and the final performance of Cd-free CIGS devices were investigated. X-ray photoelectron spectroscopy (XPS) analysis revealed that the aqueous solution etched away sodium compounds accumulated on the CIGS surface, which was found to be detrimental for solar cell operation. Wet treatment with NH 4 OH solution led to a reduced photocurrent, which was attributed to the thinning (or removal) of an ordered vacancy compound (OVC) layer on the CIGS surface as evidenced by an increased Cu XPS peak intensity after the NH 4 OH treatment. However, the addition of Cd 2+ ions to the NH 4 OH aqueous solution suppressed the etching of the OVC by NH 4 OH, explaining why such a negative effect of NH 4 OH is not present in the conventional chemical bath deposition of CdS. The band alignment at the CIGS/ZnTiO interface was quantified using XPS depth profile measurements. A small cliff-like conduction band offset of -0.11 eV was identified at the interface, which indicates room for further improvement of efficiency of the CIGS/ZnTiO solar cells once the band alignment is altered to a slight spike by inserting a passivation layer with a higher conduction band edge than ZnTiO. Combination of the small cliff conduction band offset at the interface, removal of the Na compound via water, and surface doping by Cd ions allowed the application of ZnTiO buffer to CIGS treated with Cd solutions, exhibiting an efficiency of 80% compared to that of a reference CIGS solar cell treated with the CdS.

Promoting SnTe as an Eco-Friendly Solution for p-PbTe Thermoelectric via Band Convergence and Interstitial Defects.

PubMed

Li, Wen; Zheng, Linglang; Ge, Binghui; Lin, Siqi; Zhang, Xinyue; Chen, Zhiwei; Chang, Yunjie; Pei, Yanzhong

2017-05-01

Compared to commercially available p-type PbTe thermoelectrics, SnTe has a much bigger band offset between its two valence bands and a much higher lattice thermal conductivity, both of which limit its peak thermoelectric figure of merit, zT of only 0.4. Converging its valence bands or introducing resonant states is found to enhance the electronic properties, while nanostructuring or more recently introducing interstitial defects is found to reduce the lattice thermal conductivity. Even with an integration of some of the strategies above, existing efforts do not enable a peak zT exceeding 1.4 and usually involve Cd or Hg. In this work, a combination of band convergence and interstitial defects, each of which enables a ≈150% increase in the peak zT, successfully accumulates the zT enhancements to be ≈300% (zT up to 1.6) without involving any toxic elements. This opens new possibilities for further improvements and promotes SnTe as an environment-friendly solution for conventional p-PbTe thermoelectrics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Understanding conductivity anomalies in Cu(I)-based delafossite transparent conducting oxides: Theoretical insights.

PubMed

Scanlon, David O; Godinho, Kate G; Morgan, Benjamin J; Watson, Graeme W

2010-01-14

The Cu(I)-based delafossite structure, Cu(I)M(III)O(2), can accommodate a wide range of rare earth and transition metal cations on the M(III) site. Substitutional doping of divalent ions for these trivalent metals is known to produce higher p-type conductivity than that occurring in the undoped materials. However, an explanation of the conductivity anomalies observed in these p-type materials, as the trivalent metal is varied, is still lacking. In this article, we examine the electronic structure of Cu(I)M(III)O(2) (M(III)=Al,Cr,Sc,Y) using density functional theory corrected for on-site Coulomb interactions in strongly correlated systems (GGA+U) and discuss the unusual experimental trends. The importance of covalent interactions between the M(III) cation and oxygen for improving conductivity in the delafossite structure is highlighted, with the covalency trends found to perfectly match the conductivity trends. We also show that calculating the natural band offsets and the effective masses of the valence band maxima is not an ideal method to classify the conduction properties of these ternary materials.

Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study.

PubMed

Zheng, Fan; Pham, Hieu H; Wang, Lin-Wang

2017-12-13

The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2 ) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containing Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2 , was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV.

Effects of the c-Si/a-SiO 2 interfacial atomic structure on its band alignment: an ab initio study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Fan; Pham, Hieu H.; Wang, Lin-Wang

The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here in this study, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containingmore » Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2, was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV« less

Effects of the c-Si/a-SiO 2 interfacial atomic structure on its band alignment: an ab initio study

DOE PAGES

Zheng, Fan; Pham, Hieu H.; Wang, Lin-Wang

2017-11-13

The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here in this study, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containingmore » Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2, was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV« less

Valence band offsets of Sc x Ga1-x N/AlN and Sc x Ga1-x N/GaN heterojunctions

NASA Astrophysics Data System (ADS)

Tsui, H. C. L.; Goff, L. E.; Palgrave, R. G.; Beere, H. E.; Farrer, I.; Ritchie, D. A.; Moram, M. A.

2016-07-01

The valence band offsets of Sc x Ga1-x N/AlN heterojunctions were measured by x-ray photoelectron spectroscopy (XPS) and were found to increase from 0.42 eV to 0.95 eV as the Sc content x increased from 0 to 0.15. The increase in valence band offset with increasing x is attributed to the corresponding increase in spontaneous polarization of the wurtzite structure. The Sc x Ga1-x N/AlN heterojunction is type I, similar to other III-nitride-based heterojunctions. The data also indicate that a type II staggered heterojunction, which can enhance spatial charge separation, could be formed if Sc x Ga1-x N is grown on GaN.

Band alignment of 2D WS2/HfO2 interfaces from x-ray photoelectron spectroscopy and first-principles calculations

NASA Astrophysics Data System (ADS)

Zhu, H. L.; Zhou, C. J.; Tang, B. S.; Yang, W. F.; Chai, J. W.; Tay, W. L.; Gong, H.; Pan, J. S.; Zou, W. D.; Wang, S. J.; Chi, D. Z.

2018-04-01

We report on the growth of two-dimensional (2D) WS2 on high-k HfO2/Si substrates by reactive sputtering deposition. Raman, x-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy characterizations indicate that the 2D WS2 layers exhibit high-quality crystallinity and exact stoichiometry. Through high-resolution XPS valence spectra, we find a type I alignment at the interface of monolayer WS2/HfO2 with a valence band offset (VBO) of 1.95 eV and a conduction band offset (CBO) of 1.57 eV. The VBO and CBO are also found to increase up to 2.24 eV and 2.09 eV, respectively, with increasing WS2 layers. This is consistent with the results obtained from our first-principles calculations. Our theoretical calculations reveal that the remarkable splitting and shift of the W 5 d z 2 orbital originating from interlayer orbital coupling in thicker WS2 films induce a reduction of its bandgap, leading to an increase in both the VBO and CBO. This observation can be attributed to the asymmetric splitting at different high symmetric k-points caused by the interlayer orbital coupling.

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

DOE PAGES

Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; ...

2015-02-09

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr xTi 1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x.more » We present structural and electrical characterization of SrZr xTi 1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

Efficient evaluation of nonlocal operators in density functional theory

NASA Astrophysics Data System (ADS)

Chen, Ying-Chih; Chen, Jing-Zhe; Michaud-Rioux, Vincent; Shi, Qing; Guo, Hong

2018-02-01

We present a method which combines plane waves (PW) and numerical atomic orbitals (NAO) to efficiently evaluate nonlocal operators in density functional theory with periodic boundary conditions. Nonlocal operators are first expanded using PW and then transformed to NAO so that the problem of distance-truncation is avoided. The general formalism is implemented using the hybrid functional HSE06 where the nonlocal operator is the exact exchange. Comparison of electronic structures of a wide range of semiconductors to a pure PW scheme validates the accuracy of our method. Due to the locality of NAO, thus sparsity of matrix representations of the operators, the computational complexity of the method is asymptotically quadratic in the number of electrons. Finally, we apply the technique to investigate the electronic structure of the interface between a single-layer black phosphorous and the high-κ dielectric material c -HfO2 . We predict that the band offset between the two materials is 1.29 eV and 2.18 eV for valence and conduction band edges, respectively, and such offsets are suitable for 2D field-effect transistor applications.

Interfacial electronic structures revealed at the rubrene/CH3NH3PbI3 interface.

PubMed

Ji, Gengwu; Zheng, Guanhaojie; Zhao, Bin; Song, Fei; Zhang, Xiaonan; Shen, Kongchao; Yang, Yingguo; Xiong, Yimin; Gao, Xingyu; Cao, Liang; Qi, Dong-Chen

2017-03-01

The electronic structures of rubrene films deposited on CH 3 NH 3 PbI 3 perovskite have been investigated using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). It was found that rubrene molecules interacted weakly with the perovskite substrate. Due to charge redistribution at their interface, a downward 'band bending'-like energy shift of ∼0.3 eV and an upward band bending of ∼0.1 eV were identified at the upper rubrene side and the CH 3 NH 3 PbI 3 substrate side, respectively. After the energy level alignment was established at the rubrene/CH 3 NH 3 PbI 3 interface, its highest occupied molecular orbital (HOMO)-valence band maximum (VBM) offset was found to be as low as ∼0.1 eV favoring the hole extraction with its lowest unoccupied molecular orbital (LUMO)-conduction band minimum (CBM) offset as large as ∼1.4 eV effectively blocking the undesired electron transfer from perovskite to rubrene. As a demonstration, simple inverted planar solar cell devices incorporating rubrene and rubrene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transport layers (HTLs) were fabricated in this work and yielded a champion power conversion efficiency of 8.76% and 13.52%, respectively. Thus, the present work suggests that a rubrene thin film could serve as a promising hole transport layer for efficient perovskite-based solar cells.

Characterization of Polar, Semi-Polar, and Non-Polar p-n Homo and Hetero-junctions grown by Ammonia Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Hurni, Christophe Antoine

Widespread interest in the group III-Nitrides began with the achievement of p-type conductivity in the early 1990s in Mg-doped GaN films grown by metal organic chemical vapor deposition (MOCVD) by Nakamura et al. Indeed, MOCVD-grown Mg-doped GaN is insulating as-grown, because of the formation of neutral Mg-H complexes. Nakamura et al. showed that a rapid thermal anneal removes the hydrogen and enables p-conductivity. Shortly after this discovery, the first LEDs and lasers were demonstrated by Nakamura et al. The necessary annealing step is problematic for devices which need a buried p-layer, such as hetero-junction bipolar transistors. Ammonia molecular beam epitaxy (NH3-MBE) has a great potential for growing vertical III-Nitrides-based devices, thank to its N-rich growth conditions and all the usual advantages of MBE, which include a low-impurity growth environment, in situ monitoring techniques as well as the ability to grow sharp interfaces. We first investigated the growth of p-GaN by NH3-MBE. We found that the hole concentration strongly depends on the growth temperature. Thanks to comprehensive Hall and transfer length measurements, we found evidences for a compensating donor defects in NH3-MBE-grown Mg-doped GaN films. High-quality p-n junctions with very low reverse current and close to unity ideality factor were also grown and investigated. For the design of heterojunction devices such as laser diodes, light emitting diodes or heterojunction bipolar transistors, hetero-interface's characteristics such as the band offset or interface charges are fundamental. A technique developed by Kroemer et al. uses capacitance-voltage (C-V) profiling to extract band-offsets and charges at a hetero-interface. We applied this technique to the III-Nitrides. We discovered that for the polar III-Nitrides, the technique is not applicable because of the very large polarization charge. We nevertheless successfully measured the polarization charge at the AlGaN/GaN hetero-interface though C-V profiling. In the non-polar and semi-polar cases, the hetero-interface charge was low enough to extract the conduction band-offset through C-V profiling, provided that the doping profile had a foreseeable behavior.

Characteristics of Fault Zones in Volcanic Rocks Near Yucca Flat, Nevada Test Site, Nevada

USGS Publications Warehouse

Sweetkind, Donald S.; Drake II, Ronald M.

2007-01-01

During 2005 and 2006, the USGS conducted geological studies of fault zones at surface outcrops at the Nevada Test Site. The objectives of these studies were to characterize fault geometry, identify the presence of fault splays, and understand the width and internal architecture of fault zones. Geologic investigations were conducted at surface exposures in upland areas adjacent to Yucca Flat, a basin in the northeastern part of the Nevada Test Site; these data serve as control points for the interpretation of the subsurface data collected at Yucca Flat by other USGS scientists. Fault zones in volcanic rocks near Yucca Flat differ in character and width as a result of differences in the degree of welding and alteration of the protolith, and amount of fault offset. Fault-related damage zones tend to scale with fault offset; damage zones associated with large-offset faults (>100 m) are many tens of meters wide, whereas damage zones associated with smaller-offset faults are generally a only a meter or two wide. Zeolitically-altered tuff develops moderate-sized damage zones whereas vitric nonwelded, bedded and airfall tuff have very minor damage zones, often consisting of the fault zone itself as a deformation band, with minor fault effect to the surrounding rock mass. These differences in fault geometry and fault zone architecture in surface analog sites can serve as a guide toward interpretation of high-resolution subsurface geophysical results from Yucca Flat.

Electroluminescence property of organic light emitting diode (OLED)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Özdemir, Orhan; Kavak, Pelin; Saatci, A. Evrim

2013-12-16

Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage), 1.8 V, which was the difference of energy band gap of polymer and two barrier offsets between metals and polymer.

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

DOE PAGES

Wampler, William R.; Samuel M. Myers; Modine, Normand A.

2016-10-04

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination inmore » the emitter-base depletion region.« less

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Samuel M. Myers; Modine, Normand A.

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination inmore » the emitter-base depletion region.« less

Coda-wave and ambient noise interferometry using an offset vertical array at Iwanuma site, northeast Japan

NASA Astrophysics Data System (ADS)

Minami, K.; Yamamoto, M.; Nishimura, T.; Nakahara, H.; Shiomi, K.

2013-12-01

Seismic interferometry using vertical borehole arrays is a powerful tool to estimate the shallow subsurface structure and its time lapse changes. However, the wave fields surrounding borehole arrays are non-isotropic due to the existence of ground surface and non-uniform distribution of sources, and do not meet the requirements of the seismic interferometry in a strict sense. In this study, to examine differences between wave fields of coda waves and ambient noise, and to estimate their effects on the results of seismic interferometry, we conducted a temporal seismic experiment using zero-offset and offset vertical arrays. We installed two 3-components seismometers (hereafter called Surface1 and Surface2) at the ground surface in the vicinity of NIED Iwanuma site (Miyagi Pref., Japan). Surface1 is placed just above the Hi-net downhole seismometer whose depth is 101 m, and Surface2 is placed 70 m away from Surface1. To extract the wave propagation between these 3 seismometers, we compute the cross-correlation functions (CCFs) of coda-wave and ambient noise for each pair of the zero-offset vertical (Hi-net-Surface1), finite-offset vertical (Hi-net-Surface2), and horizontal (Surface1-Surface2) arrays. We use the frequency bands of 4-8, 8-16 Hz in the CCF computation. The characteristics of obtained CCFs are summarized as follows; (1) in all frequency bands, the peak lag times of CCFs from coda waves are almost the same between the vertical and offset-vertical arrays irrespective of different inter-station distance, and those for the horizontal array are around 0 s. (2) the peak lag times of CCFs from ambient noise show slight differences, that is, those obtained from the vertical array are earlier than those from the offset-vertical array, and those from the horizontal array are around 0.05 s. (3) the peak lag times of CCFs for the vertical array obtained from ambient noise analyses are earlier than those from the coda-wave analyses. These results indicate that wave fields of coda-wave are mainly composed of vertically propagating waves, while those of ambient noise are composed of both vertically and horizontally propagating waves. To explain these characteristics of the CCFs obtained from different wave fields, we conducted a numerical simulation of interferometry based on the concept of stationary phase. Here, we assume isotropic upward incidence of SV-wave into a homogeneous half-space, and compute CCFs for the zero-offset and finite-offset vertical arrays by taking into account the reflection and conversion of P-SV waves at the free surface. Due to the effectively non-isotropic wave field, the simulated CCF for the zero-offset vertical array shows slight delay in peak lag time and its amplitudes decrease in the acausal part. On the other hand, the simulated CCF for finite-offset vertical array shows amplitude decrease and no peak lag time shift. These results are consistent with the difference in peak lag times obtained from coda-wave and ambient noise analyses. Our observations and theoretical consideration suggest that the careful consideration of wave fields is important in the application of seismic interferometry to borehole array data.

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.

PubMed

Wei, Wei; Qin, Zhixin; Fan, Shunfei; Li, Zhiwei; Shi, Kai; Zhu, Qinsheng; Zhang, Guoyi

2012-10-10

A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

PubMed Central

2012-01-01

A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV. PMID:23046910

Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures

NASA Astrophysics Data System (ADS)

Mönch, Winfried

2011-06-01

Empirical branch-point energies of Si, the group-III nitrides AlN, GaN, and InN, and the group-II and group-III oxides MgO, ZnO, Al2O3 and In2O3 are determined from experimental valance-band offsets of their heterostructures. For Si, GaN, and MgO, these values agree with the branch-point energies obtained from the barrier heights of their Schottky contacts. The empirical branch-point energies of Si and the group-III nitrides are in very good agreement with results of previously published calculations using quite different approaches such as the empirical tight-binding approximation and modern electronic-structure theory. In contrast, the empirical branch-point energies of the group-II and group-III oxides do not confirm the respective theoretical results. As at Schottky contacts, the band-structure lineup at heterostructures is also made up of a zero-charge-transfer term and an intrinsic electric-dipole contribution. Hence, valence-band offsets are not equal to the difference of the branch-point energies of the two semiconductors forming the heterostructure. The electric-dipole term may be described by the electronegativity difference of the two solids in contact. A detailed analysis of experimental Si Schottky barrier heights and heterostructure valence-band offsets explains and proves these conclusions.

Simulation study of short-channel effects of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro; Matsukawa, Takashi

2018-04-01

Short-channel effects of tunnel field-effect transistors (FETs) are investigated in detail using simulations of a nonlocal band-to-band tunneling model. Discussion is limited to silicon. Several simulation scenarios were considered to address different effects, such as source overlap and drain offset effects. Adopting the drain offset to suppress the drain leakage current suppressed the short channel effects. The physical mechanism underlying the short-channel behavior of the tunnel FETs (TFETs) was very different from that of metal-oxide-semiconductor FETs (MOSFETs). The minimal gate lengths that do not lose on-state current by one order are shown to be 3 nm for single-gate structures and 2 nm for double gate structures, as determined from the drain offset structure.

AlInAsSb/GaSb staircase avalanche photodiode

NASA Astrophysics Data System (ADS)

Ren, Min; Maddox, Scott; Chen, Yaojia; Woodson, Madison; Campbell, Joe C.; Bank, Seth

2016-02-01

Over 30 years ago, Capasso and co-workers [IEEE Trans. Electron Devices 30, 381 (1982)] proposed the staircase avalanche photodetector (APD) as a solid-state analog of the photomultiplier tube. In this structure, electron multiplication occurs deterministically at steps in the conduction band profile, which function as the dynodes of a photomultiplier tube, leading to low excess multiplication noise. Unlike traditional APDs, the origin of staircase gain is band engineering rather than large applied electric fields. Unfortunately, the materials available at the time, principally AlxGa1-xAs/GaAs, did not offer sufficiently large conduction band offsets and energy separations between the direct and indirect valleys to realize the full potential of the staircase gain mechanism. Here, we report a true staircase APD operation using alloys of a rather underexplored material, AlxIn1-xAsySb1-y, lattice-matched to GaSb. Single step "staircase" devices exhibited a constant gain of ˜2×, over a broad range of applied bias, operating temperature, and excitation wavelengths/intensities, consistent with Monte Carlo calculations.

Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells

NASA Astrophysics Data System (ADS)

Monserrat, Bartomeu; Park, Ji-Sang; Kim, Sunghyun; Walsh, Aron

2018-05-01

The efficiencies of solar cells based on kesterite Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) are limited by a low open-circuit voltage due to high rates of non-radiative electron-hole recombination. To probe the origin of this bottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming a weak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV for CZTSe/wurtzite-CdS. We also consider the effects of temperature on the band alignment, finding that increasing temperature significantly enhances the spike-type offset. We further resolve an outstanding discrepancy between the measured and calculated phonon frequencies for the kesterites, and use these to estimate the upper limit of electron and hole mobilities based on optic phonon Fröhlich scattering, which uncovers an intrinsic asymmetry with faster (minority carrier) electron mobility.

Growth and characterization of highly tensile strained Ge{sub 1−x}Sn{sub x} formed on relaxed In{sub y}Ga{sub 1−y}P buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wei; D'Costa, Vijay Richard; Dong, Yuan

2016-03-28

Ge{sub 0.94}Sn{sub 0.06} films with high tensile strain were grown on strain-relaxed In{sub y}Ga{sub 1−y}P virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge{sub 0.94}Sn{sub 0.06} film was varied by changing the In mole fraction in In{sub x}Ga{sub 1−x}P buffer layer. The tensile strained Ge{sub 0.94}Sn{sub 0.06} films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge{sub 0.94}Sn{sub 0.06} was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was notmore » relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge{sub 0.94}Sn{sub 0.06} on In{sub 0.77}Ga{sub 0.23}P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge{sub 0.94}Sn{sub 0.06}/In{sub 0.77}Ga{sub 0.23}P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.« less

ACTS Ka-Band Earth Stations: Technology, Performance, and Lessons Learned

NASA Technical Reports Server (NTRS)

Reinhart, Richard C.; Struharik, Steven J.; Diamond, John J.; Stewart, David

2000-01-01

The Advanced Communications Technology Satellite (ACTS) Project invested heavily in prototype Ka-band satellite ground terminals to conduct an experiments program with ACTS. The ACTS experiments program proposed to validate Ka-band satellite and ground-station technology, demonstrate future telecommunication services, demonstrate commercial viability and market acceptability of these new services, evaluate system networking and processing technology, and characterize Ka-band propagation effects, including development of techniques to mitigate signal fading. This paper will present a summary of the fixed ground terminals developed by the NASA Glenn Research Center and its industry partners, emphasizing the technology and performance of the terminals and the lessons learned throughout their 6-year operation, including the inclined orbit phase-of-operations. The fixed ground stations used for experiments by government, academic, and commercial entities used reflector-based offset-fed antenna systems with antennas ranging in size from 0.35 to 3.4 in. in diameter. Gateway earth stations included two systems referred to as the NASA Ground Station (NGS) and the Link Evaluation Terminal (LET).

Using VISAR to assess the M-band isotropy in hohlraums

DOE PAGES

Lanier, Nicholas Edward; Kline, John L.; Morton, John

2016-09-27

In laser based radiation flow experiments, drive variability can often overwhelm the physics sensitivity that one seeks to quantify. Hohlraums can help by providing a more symmetrized, Planckian-like source. However, at higher temperatures, the hohlraum’s actual emission can deviate significantly from a truly blackbody, Lambertian source. At the National Ignition Facility (NIF), Dante provides the best quantification of hohlraum output. Unfortunately, limited diagnostic access coupled with NIF’s natural symmetry does not allow for Dante measurements at more than two angles. As part of the CEPHEUS campaign on NIF, proof-of-principle experiments to better quantify the gold M-band isotropy were conducted. Thesemore » experiments positioned beryllium/aluminum mirrors at differing angles, offset from the hohlraum. Filtering removes the thermal emission of the hohlraum and the remaining M-band radiation is preferentially absorbed in the aluminum layer. The subsequent hydrodynamic motion is measured via VISAR. Although indirect, this M-band measurement can be made at any angle.« less

Valence-band offsets in strained SiGeSn/Si layers with different tin contents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bloshkin, A. A., E-mail: bloshkin@isp.nsc.ru; Yakimov, A. I.; Timofeev, V. A.

Admittance spectroscopy is used to study hole states in Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y}/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y} layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y} heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si{sub 0.7–y}Ge{sub 0.3}Sn{submore » y} layers and Si on the tin content is described by the expression ΔE{sub V}{sup exp} = (0.21 ± 0.01) + (3.35 ± 7.8 × 10{sup –4})y eV.« less

Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures

NASA Astrophysics Data System (ADS)

Haight, R.; Silberman, J. A.

1990-10-01

Using angle-resolved picosecond laser photoemission we have investigated both occupied and transiently excited empty states at the surface of Ge grown epitaxially on GaAs(110). We observe a normally unoccupied, Ge layer derived state whose separation from the valence-band maximum of the system is 700±50 meV at six monolayers Ge coverage. The evolution of the electronic structure is followed as a function of coverage and correlated with low-energy electron diffraction. The time dependence of the transiently occupied Ge signal is compared with that of the clean GaAs(110) surface and shows that electrons are prevented from diffusing into the GaAs bulk by the conduction-band offset of 330±40 meV.

MoS2 Heterojunctions by Thickness Modulation

PubMed Central

Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; Ko, Changhyun; Seuk Kang, Jeong; Lien, Der-Hsien; Najmzadeh, Mohammad; Tongay, Sefaattin; Wu, Junqiao; Javey, Ali

2015-01-01

In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices. PMID:26121940

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

MoS 2 Heterojunctions by Thickness Modulation

DOE PAGES

Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; ...

2015-06-30

In this work, we report lateral heterojunction formation in as-exfoliated MoS 2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. Finally, the work presents experimental and theoretical understanding of the band alignmentmore » and photoresponse of thickness modulated MoS 2 junctions with important implications for exploring novel optoelectronic devices.« less

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

NASA Astrophysics Data System (ADS)

Chokawa, Kenta; Narita, Tetsuo; Kikuta, Daigo; Kachi, Tetsu; Shiozaki, Koji; Shiraishi, Kenji

2018-03-01

We examine the energy band diagram at the n-type GaN (n-GaN)/SiO2 interface and show that electron transfer from n-GaN to SiO2 leads to the formation of negatively charged oxygen vacancies in the SiO2, resulting in the self-formation of an n-GaN/Ga2O3/SiO2 structure. On the other hand, it is difficult to automatically form Ga2O3 at a p-type GaN (p-GaN)/SiO2 interface. This electron-transfer-induced self-formation of Ga2O3 causes an interface dipole, which leads to band bending, resulting in an increase in the conduction band offset between GaN and SiO2. Accordingly, by using this self-forming phenomenon, GaN MOSFETs with lower leakage current can be realized.

Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles

NASA Astrophysics Data System (ADS)

Lang, O.; Klein, A.; Pettenkofer, C.; Jaegermann, W.; Chevy, A.

1996-10-01

Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on each other is obtained with the concept of van der Waals epitaxy as proven by low-energy electron diffraction and scanning tunnel microscope. InSe/GaSe/InSe and GaSe/InSe/GaSe quantum well structures were prepared by molecular beam epitaxy and their interface properties were characterized by soft x-ray photoelectron spectroscopy. Valence and conduction band offsets are determined to be 0.1 and 0.9 eV, respectively, and do not depend on deposition sequence (commutativity). As determined from the measured work functions the interface dipole is 0.05 eV; the band lineup between the two materials is correctly predicted by the Anderson model (electron affinity rule).

Zirconium doped TiO{sub 2} thin films: A promising dielectric layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Arvind; Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in; Rao, K. S. R. Koteswara

2016-05-06

In the present work, we have fabricated the zirconium doped TiO{sub 2} thin (ZTO) films from a facile spin – coating method. The addition of Zirconium in TiO{sub 2} offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO{sub 2} thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ∼10{sup −8} A/cm{sup 2}. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compactmore » and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.« less

Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride

PubMed Central

2013-01-01

The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band alignment of Y2O3/interfacial layer/GaN structure. Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients. Of these investigated samples, ability of the sample annealed in O2 ambient to withstand the highest electric breakdown field (approximately 6.6 MV/cm) at 10−6 A/cm2 was related to the largest conduction band offset of interfacial layer/GaN (3.77 eV) and barrier height (3.72 eV). PMID:23360596

GOSAT TIR spectral validation with High/Low temperature target using Aircraft base-FTS S-HIS

NASA Astrophysics Data System (ADS)

Kataoka, F.; Knuteson, R.; Taylor, J. K.; Kuze, A.; Shiomi, K.; Suto, H.; Yoshida, J.

2017-12-01

The Greenhouse gases Observing SATellite (GOSAT) was launched on January 2009. The GOSAT is equipped with TANSO-FTS (Fourier-Transform Spectrometer), which observe reflected solar radiation from the Earth's surface with shortwave infrared (SWIR) band and thermal emission from the Earth's surface and atmosphere with thermal infrared (TIR) band. The TIR band cover wide spectral range (650 - 1800 [cm-1]) with a high spectral resolution (0.2 [cm-1]). The TIR spectral information provide vertical distribution of CO2 and CH4. GOSAT has been operation more than eight years. In this long operation, GOSAT had experienced two big accidents; Rotation of one of the solar paddles stopped and sudden TANSO-FTS operation stop in May 2014 and cryocooler shutdown and restart in August - September 2015. These events affected the operation condition of the TIR photo-conductive (PC)-MCT detector. FTS technology using multiplex wide spectra needs wide dynamic range. PC detector has nonlinearity. Its correction needs accurate estimation of time-dependent offset. In current TIR Level 1B product version (V201), the non-photon level offset (Vdc_offset) estimated from on-orbit deep space calibration data and pre-launch background radiation model. But the background radiation and detector temperature have changed after cryocooler shutdown events. These changes are too small to detect from onboard temperature sensors. The next TIR Level 1B product uses cross calibration data together with deep space calibration data and instrument radiation model has been updated. This work describes the evaluation of new TIR Level 1B spectral quality with aircraft-based FTS; Scanning High-resolution Interferometer Sounder (S-HIS). The S-HIS mounted on the high-altitude ER-2 aircraft and flew at about 20km altitude. Because the observation geometry of GOSAT and S-HIS are quite different, we used the double difference method using atmospheric transfer model. GOSAT TIR band cover wide dynamic range, so we check the TIR spectral quality at high/low temperature target. (ex, desert, bare soil and ice sheet).

Multilayer graphene growth on polar dielectric substrates using chemical vapour deposition

NASA Astrophysics Data System (ADS)

Karamat, S.; Çelik, K.; Shah Zaman, S.; Oral, A.

2018-06-01

High quality of graphene is necessary for its applications at industrial scale production. The most convenient way is its direct growth on dielectrics which avoid the transfer route of graphene from metal to dielectric substrate usually followed by graphene community. The choice of a suitable dielectric for the gate material which can replace silicon dioxide (SiO2) is in high demand. Various properties like permittivity, thermodynamic stability, film morphology, interface quality, bandgap and band alignment of other dielectrics with graphene needs more exploration. A potential dielectric material is required which could be used to grow graphene with all these qualities. Direct growth of graphene on magnesium oxide (MgO) substrates is an interesting idea and will be a new addition in the library of 2D materials. The present work is about the direct growth of graphene on MgO substrates by an ambient pressure chemical vapour deposition (CVD) method. We address the surface instability issue of the polar oxides which is the most challenging factor in MgO. Atomic force microscopy (AFM) measurements showed the topographical features of the graphene coated on MgO. X-ray photoelectron spectroscopy (XPS) study is carried out to extract information regarding the presence of necessary elements, their bonding with substrates and to confirm the sp-2 hybridization of carbon, which is a characteristic feature of graphene film. The chemical shift is due to the surface reconstruction of MgO in the prepared samples. For graphene-MgO interface, valence band offset (VBO) and conduction band offset (CBO) extracted from valence band spectra reported. Further, we predicted the energy band diagram for single layer and thin film of graphene. By using the room-temperature energy band gap values of MgO and graphene, the CBO is calculated to be 6.85 eV for single layer and 5.66 eV for few layer (1-3) of graphene layers.

The electronic band structure of Ge1-x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein-Moss effect

NASA Astrophysics Data System (ADS)

Polak, M. P.; Scharoch, P.; Kudrawiec, R.

2017-05-01

A comprehensive and detailed study of the composition dependence of lattice constants, band gaps and band offsets has been performed for bulk Ge1-x Sn x alloy in the full composition range using state-of-the-art density functional theory methods. A spectral weight approach to band unfolding has been applied as a means of distinguishing the indirect and direct band gaps from folded supercell band structures. In this way, four characteristic regions of the band gap character have been identified for Ge1-x Sn x alloy: an indirect band gap (x  <  6.5%), a direct band gap (6.5%  <  x  <  25%) and an inverse band gap (x  >  25%) with inverse spin-orbit split-off for 45%  <  x  <  85%. In general, it has been observed that the bowing parameters of band edges (Γ and L-point in conduction band (CBΓ and CB L ), valence band (VB), and spin-orbit (SO) band) are rather large ({{b}\\text{C{{\\text{B}} Γ }}}   =  2.43  ±  0.06 eV, {{b}\\text{C{{\\text{B}}L}}}   =  0.64  ±  0.04 eV, {{b}\\text{VB}}   =  -0.59  ±  0.04 eV, and {{b}\\text{SO}}   =  -0.49  ±  0.05 eV). This indicates that Ge1-x Sn x behaves like a highly mismatched group IV alloy. The composition dependence of lattice constant shows negligible bowing (b a   =  -0.083 Å). Obtained results have been compared with available experimental data. The origin of band gap reduction and large bowing has been analyzed and conclusions have been drawn regarding the relationship between experimental and theoretical results. It is shown that due to the low DOS at the Γ-point, a significant filling of CB by electrons in the direct gap regime may easily take place. Therefore, the Burstein-Moss effect should be considered when comparing experimental data with theoretical predictions as has already been shown for other intrinsic n-type narrow gap semiconductors (e.g. InN).

Adaptively loaded SP-offset-QAM OFDM for IM/DD communication systems.

PubMed

Zhao, Jian; Chan, Chun-Kit

2017-09-04

In this paper, we propose adaptively loaded set-partitioned offset quadrature amplitude modulation (SP-offset-QAM) orthogonal frequency division multiplexing (OFDM) for low-cost intensity-modulation direct-detection (IM/DD) communication systems. We compare this scheme with multi-band carrier-less amplitude phase modulation (CAP) and conventional OFDM, and demonstrate >40 Gbit/s transmission over 50-km single-mode fiber. It is shown that the use of SP-QAM formats, together with the adaptive loading algorithm specifically designed to this group of formats, results in significant performance improvement for all these three schemes. SP-offset-QAM OFDM exhibits greatly reduced complexity compared to SP-QAM based multi-band CAP, via parallelized implementation and minimized memory length for spectral shaping. On the other hand, this scheme shows better performance than SP-QAM based conventional OFDM at both back-to-back and after transmission. We also characterize the proposed scheme in terms of enhanced tolerance to fiber intra-channel nonlinearity and the potential to increase the communication security. The studies show that adaptive SP-offset-QAM OFDM is a promising IM/DD solution for medium- and long-reach optical access networks and data center connections.

Improved photovoltaic properties of ZnTeO-based intermediate band solar cells

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Saito, Katsuhiko; Guo, Qixin; Yu, Kin Man; Walukiewicz, Wladek

2018-02-01

Highly mismatched ZnTe1-xOx (ZnTeO) alloy is one of the potential candidates for an absorber material in a bulk intermediate band solar cell (IBSC) because a narrow, O-derived intermediate band IB (E-) is formed well below the conduction band CB (E+) edge of the ZnTe. We have previously demonstrated the generation of photocurrent induced by two-step photon absorption (TSPA) in ZnTeO IBSCs using n-ZnO window layer. However, because of the large conduction band offset (CBO) between ZnTe and ZnO, only a small open circuit voltage (Voc) was observed in this structure. Here, we report our recent progress on the development of ZnTeO IBSCs with n-ZnS window layer. ZnS has a large direct band gap of 3.7 eV with an electron affinity of 3.9 eV that can realize a smaller CBO with ZnTe. We have grown n-type ZnS thin films on ZnTe substrates by molecular beam epitaxy (MBE), and demonstrated ZnTe solar cells and ZnTeO IBSCs using n-ZnS window layer with an improved VOC. Especially, a n-ZnS/i-ZnTe/p-ZnTe solar cell showed an improved Voc of 0.77 V, a large short-circuit current density of 6.7 mA/cm2 with a fill factor of 0.60, yielding the power conversion efficiency of 3.1 %, under 1 sun illumination.

The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy--A chemical inert interface with significant band discontinuities.

PubMed

Zhang, Yufeng; Lin, Nanying; Li, Yaping; Wang, Xiaodan; Wang, Huiqiong; Kang, Junyong; Wilks, Regan; Bär, Marcus; Mu, Rui

2016-03-15

ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n-type 6H-SiC single crystalline substrates. The chemical and electronic structure of the ZnO/SiC interfaces were characterized by ultraviolet/x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. In contrast to the ZnO/SiC interface prepared by radio frequency magnetron sputtering, no willemite-like zinc silicate interface species is present at the MBE-ZnO/SiC interface. Furthermore, the valence band offset at the abrupt ZnO/SiC interface is experimentally determined to be (1.2 ± 0.3) eV, suggesting a conduction band offset of approximately 0.8 eV, thus explaining the reported excellent rectifying characteristics of isotype ZnO/SiC heterojunctions. These insights lead to a better comprehension of the ZnO/SiC interface and show that the choice of deposition route might offer a powerful means to tailor the chemical and electronic structures of the ZnO/SiC interface, which can eventually be utilized to optimize related devices.

The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities

PubMed Central

Zhang, Yufeng; Lin, Nanying; Li, Yaping; Wang, Xiaodan; Wang, Huiqiong; Kang, Junyong; Wilks, Regan; Bär, Marcus; Mu, Rui

2016-01-01

ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n–type 6H-SiC single crystalline substrates. The chemical and electronic structure of the ZnO/SiC interfaces were characterized by ultraviolet/x-ray photoelectron spectroscopy and x-ray excited Auger electron spectroscopy. In contrast to the ZnO/SiC interface prepared by radio frequency magnetron sputtering, no willemite-like zinc silicate interface species is present at the MBE-ZnO/SiC interface. Furthermore, the valence band offset at the abrupt ZnO/SiC interface is experimentally determined to be (1.2 ± 0.3) eV, suggesting a conduction band offset of approximately 0.8 eV, thus explaining the reported excellent rectifying characteristics of isotype ZnO/SiC heterojunctions. These insights lead to a better comprehension of the ZnO/SiC interface and show that the choice of deposition route might offer a powerful means to tailor the chemical and electronic structures of the ZnO/SiC interface, which can eventually be utilized to optimize related devices. PMID:26976240

Electron transport in nanocrystalline SiC films obtained by direct ion deposition

NASA Astrophysics Data System (ADS)

Kozlovskyi, A.; Semenov, A.; Skorik, S.

2016-12-01

Electrical conductivity of nanocrystalline SiC films obtained by direct ion deposition was investigated within the temperature interval from 2 to 770 K. It were investigated the samples of films with 3С-SiC polytype structure and the heteropolytype films formed by layers of different polytypes SiC (3C-SiC/21R-SiC, 21R-SiC/27R-SiC, 3C-SiC/15R-SiC). The films had n-type conductivity that ensured a small excess of silicon ions. The thermally activated character of electron transport in the 3С-SiC polytype films was established. In the heteropolytype films the temperature dependence of the electrical resistance was described by the relation R(T) = R0 × exp[-kT/E0]. It was shown that the charge transport mechanism in the heteropolytype samples is electron tunneling through potential barriers formed by the conduction band offset in the contact region of the heterojunction. Tunnel charge transport occurs due to the presence of discrete energy states in the forbidden band caused the dimensional quantization.

DFT study on the interfacial properties of vertical and in-plane BiOI/BiOIO3 hetero-structures.

PubMed

Dai, Wen-Wu; Zhao, Zong-Yan

2017-04-12

Composite photocatalysts with hetero-structures usually favor the effective separation of photo-generated carriers. In this study, BiOIO 3 was chosen to form a hetero-structure with BiOI, due to its internal polar field and good lattice matching with BiOI. The interfacial properties and band offsets were focused on and analyzed in detail by DFT calculations. The results show that the charge depletion and accumulation mainly occur in the region near the interface. This effect leads to an interfacial electric field and thus, the photo-generated electron-hole pairs can be easily separated and transferred along opposite directions at the interface, which is significant for the enhancement of the photocatalytic activity. Moreover, according to the analysis of band offsets, the vertical BiOI/BiOIO 3 belongs to the type-II hetero-structure, while the in-plane BiOI/BiOIO 3 belongs to the type-I hetero-structure. The former type of hetero-structure has more favorable effects to enhance the photocatalytic activity of BiOI than that of the latter type of hetero-structure. In the case of the vertical BiOI/BiOIO 3 hetero-structure, photo-generated electrons can move from the conduction band of BiOI to that of BiOIO 3 , while holes can move from the valence band of BiOIO 3 to that of BiOI under solar radiation. In addition, the introduced internal electric field functions as a selector that can promote the separation of photo-generated carriers, resulting in the higher photocatalytic quantum efficiency. These findings illustrate the underlying mechanism for the reported experiments, and can be used as a basis for the design of novel highly efficient composite photocatalysts with hetero-structures.

Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy.

PubMed

Timm, Rainer; Eisele, Holger; Lenz, Andrea; Ivanova, Lena; Vossebürger, Vivien; Warming, Till; Bimberg, Dieter; Farrer, Ian; Ritchie, David A; Dähne, Mario

2010-10-13

Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.

Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates

NASA Astrophysics Data System (ADS)

Gozu, Shin-ichiro; Mozume, Teruo

2018-05-01

InAlP/InGaAs based coupled double quantum wells (CDQWs) are proposed for optelectronic devices utilizing intersubband transitions. The aim of the proposed CDQW structure was to reduce the Al volume as compared with that in InGaAs/AlAsSb(AlAs/InAlAs) based CDQWs. By careful consideration of the band gap energy as well as conduction band offset and lattice constants for III–V materials, highly strained InAlP was chosen as the barrier material. With the appropriate CDQW structure and under the optimized growth conditions, proposed CDQWs exhibited clear X-ray diffraction satellite peaks, and almost identical optical absorption spectrum as compared with the InGaAs/AlAs/InAlAs CDQWs.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shotaro; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

2016-01-01

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control. PMID:26973092

Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

NASA Astrophysics Data System (ADS)

Huang, Shouting

Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the size of Si/Ge core-shell NWs and corresponding quantum confinement is shown to be efficient for modifying both valence and conduction band offsets simultaneously. Our proposed approaches to control band offsets in nano-sized heterojunctions may be of practical interest for nanoelectronic and photovoltaic applications. Additionally, I also studied the lattice vibrational modes of Si/Ge core-shell N-Ws. Our calculations show that the internal strain induced by the lattice mismatch between core and shell plays an important role in significantly shifting the frequency of characteristic optical modes of core-shell NWs. In particular, our simulation demonstrates that these frequency shifts can be detected by Raman-scattering experiments, giving rise to a convenient and nondestructive way to obtain structural information of core-shell materials. Meanwhile, another type of collective modes, the radial breathing modes (RBM), is identified in Si-core/Ge-shell NWs and their frequency dependence is explained by an elastic media model. Our studied vibrational modes and their frequency evolution are useful for thermoelectric applications based on core-shell nanostructures. Then I studied optical properties and exciton spectra of 2D semiconducting carbon structures. The energy spectra and wavefunctions of excitons in the 2D graphene derivatives, i.e., graphyne and graphane, are found to be strongly modified by quantum confinement, making them qualitatively different from the usual Rydberg series. However, their parity and optical selection rules are preserved. Thus a one-parameter hydrogenic model is applied to quantitatively explain the ab initio exciton spectra, and allows one to extrapolate the electron-hole binding energy from optical spectroscopies of 2D semiconductors without costly simulations. Meanwhile, our calculated optical absorption spectrum and enhanced spin singlet-triplet splitting project graphyne, an allotrope of graphene, as a good candidate for intriguing energy and biomedical applications. Lastly, we report first-principles results on electronic structures of 2D graphene-like system, i.e., silicene. For planar and simply buckled silicene structures, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity by including many-electron effects. However, the other two recently proposed silicene structures exhibit a finite band gap, indicating that they are gapped semiconductors instead of expected Dirac-fermion semimetals. This finite band gap of the latter two structures is preserved even with the Ag substrate included. The gap opening is explained by the symmetry breaking of the buckled structures. Moreover, our GW calculation reveals enhanced many-electron effects in these 2D structures. Finally the band gap of the latter two structures can be tuned in a wide range by applying strain.

Measurements and Simulations of Nadir-Viewing Radar Returns from the Melting Layer at X- and W-Bands

NASA Technical Reports Server (NTRS)

Liao, Liang; Meneghini, Robert; Tian, Lin; Heymsfield, Gerald M.

2010-01-01

Simulated radar signatures within the melting layer in stratiform rain, namely the radar bright band, are checked by means of comparisons with simultaneous measurements of the bright band made by the EDOP (X-band) and CRS (W-band) airborne Doppler radars during the CRYSTAL-FACE campaign in 2002. A stratified-sphere model, allowing the fractional water content to vary along the radius of the particle, is used to compute the scattering properties of individual melting snowflakes. Using the effective dielectric constants computed by the conjugate gradient-fast Fourier transform (CGFFT) numerical method for X and W bands, and expressing the fractional water content of melting particle as an exponential function in particle radius, it is found that at X band the simulated radar bright-band profiles are in an excellent agreement with the measured profiles. It is also found that the simulated W-band profiles usually resemble the shapes of the measured bright-band profiles even though persistent offsets between them are present. These offsets, however, can be explained by the attenuation caused by cloud water and water vapor at W band. This is confirmed by the comparisons of the radar profiles made in the rain regions where the un-attenuated W-band reflectivity profiles can be estimated through the X- and W band Doppler velocity measurements. The bright-band model described in this paper has the potential to be used effectively for both radar and radiometer algorithms relevant to the TRMM and GPM satellite missions.

Characterization of silicon heterojunctions for solar cells

PubMed Central

2011-01-01

Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision. PMID:21711658

Optimization of an Offset Receiver Optics for Radio Telescopes

NASA Astrophysics Data System (ADS)

Yeap, Kim Ho; Tham, Choy Yoong

2018-01-01

The latest generation of Cassegrain radio astronomy antennas is designed for multiple frequency bands with receivers for individual bands offset from the antenna axis. The offset feed arrangement typically has two focusing elements in the form of ellipsoidal mirrors in the optical path between the feed horn and the antenna focus. This arrangement aligns the beam from the offset feed horn to illuminate the subreflector. The additional focusing elements increase the number of design variables, namely the distances between the horn aperture and the first mirror and that between the two mirrors, and their focal lengths. There are a huge number of possible combinations of these four variables in which the optics system can take on. The design aim is to seek the combination that will give the optimum antenna efficiency, not only at the centre frequency of the particular band but also across its bandwidth. To pick the optimum combination of the variables, it requires working through, by computational mean, a continuum range of variable values at different frequencies which will fit the optics system within the allocated physical space. Physical optics (PO) is a common technique used in optics design. However, due to the repeated iteration of the huge number of computation involved, the use of PO is not feasible. We present a procedure based on using multimode Gaussian optics to pick the optimum design and using PO for final verification of the system performance. The best antenna efficiency is achieved when the beam illuminating the subreflector is truncated with the optimum edge taper. The optimization procedure uses the beam's edge taper at the subreflector as the iteration target. The band 6 receiver optics design for the Atacama Large Millimetre Array (ALMA) antenna is used to illustrate the optimization procedure.

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

NASA Astrophysics Data System (ADS)

Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-06-01

The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

Electronic band structure and Shubnikov-de Haas effect in two-dimensional semimetallic InAs/GaSb nanostructure superlattice

NASA Astrophysics Data System (ADS)

Boutramine, Abderrazak; Nafidi, Abdelhakim; Barkissy, Driss; El-Frikhe, Es-Said; Charifi, Hicham; Elanique, Abdellatif; Chaib, Hassan

2016-02-01

We have investigated the band structure E( d = d 1 + d 2), E( k z) and E( k p), respectively, as a function of the SL period, d, in the growth direction and in plan of InAs( d 1 = 160 Å)/GaSb( d 2 = 105 Å) type II superlattice, performed in the envelope function formalism with the valence band offset, Λ, of 510 meV at 4.2 K. For the ratio d 1/ d 2 = 1.52, d and Λ dependence of the SL energy band gap show that the semiconductor-to-semimetal transition takes place at d c = 173 Å and Λ c = 463 meV. Therefore, this sample is semimetallic. The position of the Fermi level, E F = 500.2 meV, indicates n type conductivity. The spectra of energy, E( k z, k p), show a negative band gap of -48.3 meV. The cutoff wavelength | λ c| = 25.7 µm indicates that this sample can be used as a far-infrared detector. Further, we have interpreted the minima of the magnetoresistance oscillations, Shubnikov-de Haas effect, observed by D. M. Symons et al.

Programming interfacial energetic offsets and charge transfer in β-Pb 0.33V 2O 5/quantum-dot heterostructures: Tuning valence-band edges to overlap with midgap states

DOE PAGES

Pelcher, Kate E.; Milleville, Christopher C.; Wangoh, Linda; ...

2016-12-06

Here, semiconductor heterostructures for solar energy conversion interface light-harvesting semiconductor nanoparticles with wide-band-gap semiconductors that serve as charge acceptors. In such heterostructures, the kinetics of charge separation depend on the thermodynamic driving force, which is dictated by energetic offsets across the interface. A recently developed promising platform interfaces semiconductor quantum dots (QDs) with ternary vanadium oxides that have characteristic midgap states situated between the valence and conduction bands. In this work, we have prepared CdS/β-Pb 0.33V 2O 5 heterostructures by both linker-assisted assembly and surface precipitation and contrasted these materials with CdSe/β-Pb 0.33V 2O 5 heterostructures prepared by the samemore » methods. Increased valence-band (VB) edge onsets in X-ray photoelectron spectra for CdS/β-Pb 0.33V 2O 5 heterostructures relative to CdSe/β-Pb 0.33V 2O 5 heterostructures suggest a positive shift in the VB edge potential and, therefore, an increased driving force for the photoinduced transfer of holes to the midgap state of β-Pb 0.33V 2O 5. This approach facilitates a ca. 0.40 eV decrease in the thermodynamic barrier for hole injection from the VB edge of QDs suggesting an important design parameter. Transient absorption spectroscopy experiments provide direct evidence of hole transfer from photoexcited CdS QDs to the midgap states of β-Pb 0.33V 2O 5 NWs, along with electron transfer into the conduction band of the β-Pb 0.33V 2O 5 NWs. Hole transfer is substantially faster and occurs at <1-ps time scales, whereas completion of electron transfer requires 5—30 ps depending on the nature of the interface. The differentiated time scales of electron and hole transfer, which are furthermore tunable as a function of the mode of attachment of QDs to NWs, provide a vital design tool for designing architectures for solar energy conversion. More generally, the approach developed here suggests that interfacing semiconductor QDs with transition-metal oxide NWs exhibiting intercalative midgap states yields a versatile platform wherein the thermodynamics and kinetics of charge transfer can be systematically modulated to improve the efficiency of charge separation across interfaces.« less

Programming interfacial energetic offsets and charge transfer in β-Pb 0.33V 2O 5/quantum-dot heterostructures: Tuning valence-band edges to overlap with midgap states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pelcher, Kate E.; Milleville, Christopher C.; Wangoh, Linda

Here, semiconductor heterostructures for solar energy conversion interface light-harvesting semiconductor nanoparticles with wide-band-gap semiconductors that serve as charge acceptors. In such heterostructures, the kinetics of charge separation depend on the thermodynamic driving force, which is dictated by energetic offsets across the interface. A recently developed promising platform interfaces semiconductor quantum dots (QDs) with ternary vanadium oxides that have characteristic midgap states situated between the valence and conduction bands. In this work, we have prepared CdS/β-Pb 0.33V 2O 5 heterostructures by both linker-assisted assembly and surface precipitation and contrasted these materials with CdSe/β-Pb 0.33V 2O 5 heterostructures prepared by the samemore » methods. Increased valence-band (VB) edge onsets in X-ray photoelectron spectra for CdS/β-Pb 0.33V 2O 5 heterostructures relative to CdSe/β-Pb 0.33V 2O 5 heterostructures suggest a positive shift in the VB edge potential and, therefore, an increased driving force for the photoinduced transfer of holes to the midgap state of β-Pb 0.33V 2O 5. This approach facilitates a ca. 0.40 eV decrease in the thermodynamic barrier for hole injection from the VB edge of QDs suggesting an important design parameter. Transient absorption spectroscopy experiments provide direct evidence of hole transfer from photoexcited CdS QDs to the midgap states of β-Pb 0.33V 2O 5 NWs, along with electron transfer into the conduction band of the β-Pb 0.33V 2O 5 NWs. Hole transfer is substantially faster and occurs at <1-ps time scales, whereas completion of electron transfer requires 5—30 ps depending on the nature of the interface. The differentiated time scales of electron and hole transfer, which are furthermore tunable as a function of the mode of attachment of QDs to NWs, provide a vital design tool for designing architectures for solar energy conversion. More generally, the approach developed here suggests that interfacing semiconductor QDs with transition-metal oxide NWs exhibiting intercalative midgap states yields a versatile platform wherein the thermodynamics and kinetics of charge transfer can be systematically modulated to improve the efficiency of charge separation across interfaces.« less

Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Quach, Patrick; Jollivet, Arnaud; Isac, Nathalie; Bousseksou, Adel; Ariel, Frédéric; Tchernycheva, Maria; Julien, François H.; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hierro, Adrián.; Le Biavan, Nolwenn; Hugues, Maxime; Chauveau, Jean-Michel

2017-03-01

Quantum cascade (QC) lasers opens new prospects for powerful sources operating at THz frequencies. Up to now the best THz QC lasers are based on intersubband emission in GaAs/AlGaAs quantum well (QW) heterostructures. The maximum operating temperature is 200 K, which is too low for wide-spread applications. This is due to the rather low LO-phonon energy (36 meV) of GaAs-based materials. Indeed, thermal activation allows non-radiative path through electron-phonon interaction which destroys the population inversion. Wide band gap materials such as ZnO have been predicted to provide much higher operating temperatures because of the high value of their LO-phonon energy. However, despite some observations of intersubband absorption in c-plane ZnO/ZnMgO quantum wells, little is known on the fundamental parameters such as the conduction band offset in such heterostructures. In addition the internal field inherent to c-plane grown heterostuctures is an handicap for the design of QC lasers and detectors. In this talk, we will review a systematic investigation of ZnO/ZnMgO QW heterostructures with various Mg content and QW thicknesses grown by plasma molecular beam epitaxy on low-defect m-plane ZnO substrates. We will show that most samples exhibit TM-polarized intersubband absorption at room temperature linked either to bound-to-quasi bound inter-miniband absorption or to bound-to bound intersubband absorption depending on the Mg content of the barrier material. This systematic study allows for the first time to estimate the conduction band offset of ZnO/ZnMgO heterostructures, opening prospects for the design of QC devices operating at THz frequencies. This was supported by the European Union's Horizon 2020 research and innovation programme under grant agreement #665107.

Moon-to-Earth: Eavesdropping on the GRAIL Inter-Spacecraft Time-Transfer Link Using a Large Antenna and a Software Receiver

NASA Technical Reports Server (NTRS)

Esterhuizen, Stephan

2012-01-01

NASA's twin GRAIL [1] spacecraft (Ebb and Flow) arrived at Earth's Moon on New Year's Day, 2012. GRAIL's primary mission is to create a high-resolution map of the Moon's gravitational field by measuring very precisely the change in distance between the two spacecraft [2]. Each spacecraft transmits two signals to the other spacecraft, a PRN code modulated on a 2 GHz carrier (S-band), as well as an unmodulated carrier at roughly 33 GHz (Ka-band). Since it's not feasible to synchronize the two GRAIL spacecraft's clocks via GPS (as was done with GRACE), the S-band signals are used as a time-transfer link to synchronize either Ebb's clock to Flow or vice versa. As an independent measure to determine the clock offset of the GRAIL ultra-stable oscillators to UTC(NIST), an experiment was conducted where our JPL team used a large antenna on Earth to eavesdrop on the inter-spacecraft time-transfer link.

Onboard electrical calibration of the ASTER VNIR

NASA Astrophysics Data System (ADS)

Sakuma, Fumihiro; Kikuchi, Masakuni; Inada, Hitomi

2013-10-01

The Advanced Space-borne Thermal Emission and Reflection Radiometer (ASTER) is one of the five sensors on the NASA's Terra satellite on orbit since December 1999. ASTER consists of three radiometers, the Visible and Near InfraRed (VNIR), the Short-Wave InfraRed (SWIR) and Thermal InfraRed (TIR) whose spatial resolutions are 15 m, 30 m and 90 m, respectively. Unfortunately the SWIR image data are saturated since April 2008 due to the offset rise caused by the cooler temperature rise, but the VNIR and the TIR are taking Earth images of good quality. The VNIR and the TIR experienced responsivity degradation while the SWIR showed little change. From the lamp calibration, Band 1 decreased the most among three VNIR bands and 31% in thirteen years. The VNIR has the electrical calibration mode to check the healthiness of the electrical circuits through the charge coupled device (CCD). Four voltage levels from Line 1 to Line 4, which are from 2.78 V to 3.10 V, are input to the CCD in the onboard calibration sequence and the output digital numbers (DNs) are detected in the images. These input voltages are monitored as telemetry data and have been stable up to now. From the electrical calibration we can check stabilities of the offset, gain ratio and gain stability of the electric circuit. The output level of the Line1 input is close to the offset level which is measured while observing the earth at night. The trend of the Line 1 output is compared to the offset level. They are similar but are not exactly the same. The trend of the even pixel and odd pixel is the same so the saturated offset levels of the odd pixel is corrected by using the even pixel trend. The gain ratio trend shows that the ratio is stable. But the ratio values are different from those measured before launch. The difference comes up to 10% for the Band 2. The correct gain ratio should be applied to the vicarious calibration result because the onboard calibration is measured with the Normal gain whereas the vicarious calibration often measures with the High gain. The cause of the VNIR responsivity degradation is not known but one of the causes might be the change of the electric circuit. The band 3 gain shows 16 % decrease whereas the gain changes of the band 1 and band 2 are 5% to 8%. The responsivity decrease after 1000 days since launch might be controlled by the electric circuit change.

Emission properties of Ga2O3 nano-flakes: effect of excitation density.

PubMed

Pozina, G; Forsberg, M; Kaliteevski, M A; Hemmingsson, C

2017-02-08

In the quest of developing high performance electronic and optical devices and more cost effective fabrication processes of monoclinic β-Ga 2 O 3 , new growth techniques and fundamental electronic and optical properties of defects have to be explored. By heating of dissolved metallic Ga in HCl in a NH 3 and N 2 atmosphere, nano-flake films of monoclinic β-phase Ga 2 O 3 were grown as confirmed by XRD. From optical measurements, we observe two strong emissions. A red band peaking at ~2.0 eV and a UV band at ~3.8 eV. The band at ~2.0 eV is attributed to donor-acceptor pair recombination where the donor and acceptor level is suggested to be related to V O and nitrogen, respectively. By studying the dependence of the intensity of the UV band at 3.8 eV versus excitation density, a model is suggested. In the model, it is assumed that local potential fluctuations forming minima (maxima), where the carriers would be localized with a summarized band offset for conduction and valence band of 1 eV. The origin of the fluctuations is tentatively suggested to be related to micro-inclusions of different phases in the film.

Emission properties of Ga2O3 nano-flakes: effect of excitation density

PubMed Central

Pozina, G.; Forsberg, M.; Kaliteevski, M. A.; Hemmingsson, C.

2017-01-01

In the quest of developing high performance electronic and optical devices and more cost effective fabrication processes of monoclinic β-Ga2O3, new growth techniques and fundamental electronic and optical properties of defects have to be explored. By heating of dissolved metallic Ga in HCl in a NH3 and N2 atmosphere, nano-flake films of monoclinic β-phase Ga2O3 were grown as confirmed by XRD. From optical measurements, we observe two strong emissions. A red band peaking at ~2.0 eV and a UV band at ~3.8 eV. The band at ~2.0 eV is attributed to donor-acceptor pair recombination where the donor and acceptor level is suggested to be related to VO and nitrogen, respectively. By studying the dependence of the intensity of the UV band at 3.8 eV versus excitation density, a model is suggested. In the model, it is assumed that local potential fluctuations forming minima (maxima), where the carriers would be localized with a summarized band offset for conduction and valence band of 1 eV. The origin of the fluctuations is tentatively suggested to be related to micro-inclusions of different phases in the film. PMID:28176841

The electrical properties of n-ZnO/p-SnO heterojunction diodes

NASA Astrophysics Data System (ADS)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

Orientation independence of heterojunction-band offsets at GaAs-AlAs heterointerfaces characterized by x-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Hirakawa, K.; Hashimoto, Y.; Ikoma, T.

1990-12-01

We systematically studied the orientation and the growth sequence dependence of the valence-band offset ΔEv at the lattice-matched common anion GaAs-AlAs interfaces. High quality GaAs-AlAs heterojunctions were carefully grown on GaAs substrates with three major orientations, namely, (100), (110), and (111)B. The core level energy distance ΔECL between Ga 3d and Al 2p levels was measured by in situ x-ray photoemission spectroscopy. ΔECL is found to be independent of the substrate orientation and the growth sequence, which clearly indicates the face independence of ΔEv. This result suggests that the band lineup at lattice-matched isovalent semiconductor heterojunctions is determined by the bulk properties of the constituent materials. ΔEv is determined to be 0.44 ± 0.05 eV.

Offset fed slot antenna for broadband operation

NASA Astrophysics Data System (ADS)

Ritish, K.; Piyush, S.; Praveen Kumar, A. V.

2018-03-01

In this paper, a microstrip fed rectangular slot antenna with wideband characteristics is proposed. Both the impedance and radiation characteristics of the proposed antenna are presented. It is shown that a properly offset feed can give a dual resonance nature, which can be optimized to enable wideband behavior. From HFSS simulation, an impedance bandwidth (-10 dB) of 49.92 % (2.51 GHz to 4.18 GHz) about the center frequency of the band is obtained. Prototype measurement demonstrates a bandwidth of 45.30 % (2.51 GHz to 3.98 GHz). Simulated radiation patterns show bidirectional behavior, which is stable in the band with a peak gain of 5.7 dBi and a gain variation of 2 dBi.

Simultaneous enhancement of photovoltage and charge transfer in Cu{sub 2}O-based photocathode using buffer and protective layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Changli; Delaunay, Jean-Jacques, E-mail: jean@mech.t.u-tokyo.ac.jp; Hisatomi, Takashi

2016-07-18

Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but alsomore » enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.« less

Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I-type-II transition of natural band offsets in nonpolar zinc-blende AlxGa1 -xN /AlyGa1 -yN composites

NASA Astrophysics Data System (ADS)

Landmann, M.; Rauls, E.; Schmidt, W. G.

2017-04-01

The composition dependence of the natural band alignment at nonpolar AlxGa1 -xN /AlyGa1 -yN heterojunctions is investigated via hybrid functional based density functional theory. Accurate band-gap data are provided using Heyd-Scuseria-Ernzerhof (HSE) type hybrid functionals with a composition dependent exact-exchange contribution. The unstrained band alignment between zincblende (zb) AlxGa1 -xN semiconductor alloys is studied within the entire ternary composition range utilizing the Branch-point technique to align the energy levels related to the bulklike direct Γv→Γc and indirect, pseudodirect, respectively, Γv→Xc type transitions in zb-AlxGa1 -xN . While the zb-GaN/AlxGa1 -xN band edges consistently show a type-I alignment, the relative position of fundamental band edges changes to a type-II alignment in the Al-rich composition ranges of zb-AlxGa1 -xN /AlN and zb-AlxGa1 -xN /AlyGa1 -yN systems. The presence of a direct-indirect band-gap transition at xc=0.63 in zb-AlxGa1 -xN semiconductor alloys gives rise to a notably different composition dependence of band discontinuities in the direct and indirect energy-gap ranges. Below the critical direct-indirect Al/Ga-crossover concentration, the band offsets show a close to linear dependence on the alloy composition. In contrast, notable bowing characteristics of all band discontinuities are observed above the critical crossover composition.

The performance of DC restoration function for MODIS thermal emissive bands

NASA Astrophysics Data System (ADS)

Wang, Zhipeng; Xiong, Xiaoxiong Jack; Shrestha, Ashish

2017-09-01

The DC restore (DCR) process of MODIS instrument maintains the output of a detector at focal plane assembly (FPA) within the dynamic range of subsequent analog-to-digital converter, by adding a specific offset voltage to the output. The DCR offset value is adjusted per scan, based on the comparison of the detector response in digital number (DN) collected from the blackbody (BB) view with target DN saved as an on-board look-up table. In this work, the MODIS DCR mechanism is revisited, with the trends of DCR offset being provided for thermal emissive bands (TEB). Noticeable changes have been occasionally found which coincide with significant detector gain change due to various instrumental events such as safe-mode anomaly or FPA temperature fluctuation. In general, MODIS DCR functionality has been effective and the change of DCR offset has no impact to the quality of MODIS data. One exception is the Earth view (EV) data saturation of Aqua MODIS LWIR bands 33, 35 ad 36 during BB warm-up cool-down (WUCD) cycle which has been observed since 2008. The BB view of their detectors saturate when the BB temperature is above certain threshold so the DCR cannot work as designed. Therefore, the dark signal DN fluctuates with the cold FPA (CFPA) temperature and saturate for a few hours per WUCD cycle, which also saturate the EV data sector within the scan. The CFPA temperature fluctuation peaked in 2012 and has been reduced in recent years and the saturation phenomenon has been easing accordingly. This study demonstrates the importance of DCR to data generation.

Near-infrared Photometric Properties of 130,000 Quasars: An SDSS-UKIDSS-matched Catalog

NASA Astrophysics Data System (ADS)

Peth, Michael A.; Ross, Nicholas P.; Schneider, Donald P.

2011-04-01

We present a catalog of over 130,000 quasar candidates with near-infrared (NIR) photometric properties, with an areal coverage of approximately 1200 deg2. This is achieved by matching the Sloan Digital Sky Survey (SDSS) in the optical ugriz bands to the UKIRT Infrared Digital Sky Survey (UKIDSS) Large Area Survey (LAS) in the NIR YJHK bands. We match the ≈1 million SDSS DR6 Photometric Quasar catalog to Data Release 3 of the UKIDSS LAS (ULAS) and produce a catalog with 130,827 objects with detections in one or more NIR bands, of which 74,351 objects have optical and K-band detections and 42,133 objects have the full nine-band photometry. The majority (~85%) of the SDSS objects were not matched simply because these were not covered by the ULAS. The positional standard deviation of the SDSS Quasar to ULAS matches is δR.A. = 0farcs1370 and δdecl. = 0farcs1314. We find an absolute systematic astrometric offset between the SDSS Quasar catalog and the UKIDSS LAS, of |R.A.offset| = 0farcs025 and |decl.offset| = 0farcs040; we suggest the nature of this offset to be due to the matching of catalog, rather than image, level data. Our matched catalog has a surface density of ≈53 deg-2 for K <= 18.27 objects; tests using our matched catalog, along with data from the UKIDSS Deep Extragalactic Survey, imply that our limiting magnitude is i ≈ 20.6. Color-redshift diagrams, for the optical and NIR, show a close agreement between our matched catalog and recent quasar color models at redshift z <~ 2.0, while at higher redshifts, the models generally appear to be bluer than the mean observed quasar colors. The gJK and giK color spaces are used to examine methods of differentiating between stars and (mid-redshift) quasars, the key to currently ongoing quasar surveys. Finally, we report on the NIR photometric properties of high, z > 4.6, and very high, z > 5.7, redshift previously discovered quasars.

NEAR-INFRARED PHOTOMETRIC PROPERTIES OF 130,000 QUASARS: AN SDSS-UKIDSS-MATCHED CATALOG

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peth, Michael A.; Ross, Nicholas P.; Schneider, Donald P., E-mail: npross@lbl.gov

2011-04-15

We present a catalog of over 130,000 quasar candidates with near-infrared (NIR) photometric properties, with an areal coverage of approximately 1200 deg{sup 2}. This is achieved by matching the Sloan Digital Sky Survey (SDSS) in the optical ugriz bands to the UKIRT Infrared Digital Sky Survey (UKIDSS) Large Area Survey (LAS) in the NIR YJHK bands. We match the {approx}1 million SDSS DR6 Photometric Quasar catalog to Data Release 3 of the UKIDSS LAS (ULAS) and produce a catalog with 130,827 objects with detections in one or more NIR bands, of which 74,351 objects have optical and K-band detections andmore » 42,133 objects have the full nine-band photometry. The majority ({approx}85%) of the SDSS objects were not matched simply because these were not covered by the ULAS. The positional standard deviation of the SDSS Quasar to ULAS matches is {delta}{sub R.A.} = 0.''1370 and {delta}{sub decl.} = 0.''1314. We find an absolute systematic astrometric offset between the SDSS Quasar catalog and the UKIDSS LAS, of |R.A.{sub offset}| = 0.''025 and |decl.{sub offset}| = 0.''040; we suggest the nature of this offset to be due to the matching of catalog, rather than image, level data. Our matched catalog has a surface density of {approx}53 deg{sup -2} for K {<=} 18.27 objects; tests using our matched catalog, along with data from the UKIDSS Deep Extragalactic Survey, imply that our limiting magnitude is i {approx} 20.6. Color-redshift diagrams, for the optical and NIR, show a close agreement between our matched catalog and recent quasar color models at redshift z {approx}< 2.0, while at higher redshifts, the models generally appear to be bluer than the mean observed quasar colors. The gJK and giK color spaces are used to examine methods of differentiating between stars and (mid-redshift) quasars, the key to currently ongoing quasar surveys. Finally, we report on the NIR photometric properties of high, z > 4.6, and very high, z > 5.7, redshift previously discovered quasars.« less

Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

NASA Astrophysics Data System (ADS)

Zhang, Jiaye; Han, Shaobo; Luo, Weihuang; Xiang, Shuhuai; Zou, Jianli; Oropeza, Freddy E.; Gu, Meng; Zhang, Kelvin H. L.

2018-04-01

Transparent oxide semiconductors hold great promise for many optoelectronic devices such as transparent electronics, UV-emitting devices, and photodetectors. A p-n heterojunction is the most ubiquitous building block to realize these devices. In this work, we report the fabrication and characterization of the interface properties of a transparent heterojunction consisting of p-type NiO and n-type perovskite BaSnO3. We show that high-quality NiO thin films can be epitaxially grown on BaSnO3 with sharp interfaces because of a small lattice mismatch (˜1.3%). The diode fabricated from this heterojunction exhibits rectifying behavior with a ratio of 500. X-ray photoelectron spectroscopy reveals a type II or "staggered" band alignment with valence and conduction band offsets of 1.44 eV and 1.86 eV, respectively. Moreover, a large upward band bending potential of 0.90 eV for BaSnO3 and a downward band bending potential of 0.15 eV for NiO were observed in the interface region. Such electronic properties have important implication for optoelectronic applications as the large built-in potential provides favorable energetics for photo-generated electron-hole separation/migration.

Structural and electrical properties of single crystalline SrZrO 3 epitaxially grown on Ge (001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.

We present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO3 exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage currentmore » densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.« less

Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

NASA Astrophysics Data System (ADS)

Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, Rangarajan; Raghavan, Srinivasan; Nath, Digbijoy N.

2018-06-01

We demonstrate epitaxial β-Ga2O3/GaN-based vertical metal–heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7 A/W) at 256 and 365 nm, UV-to-visible rejection >103, and a photo-to-dark current ratio of ∼100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown β-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing.

Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

NASA Astrophysics Data System (ADS)

Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

2017-06-01

In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

NASA Astrophysics Data System (ADS)

Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.; Du, Y.; Bowden, M.; Moghadam, R.; LeBeau, J. M.; Chambers, S. A.; Ngai, J. H.

2017-08-01

We present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 °C in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.66 eV, respectively. Capacitance-voltage and current-voltage measurements on 4 nm thick films reveal low leakage current densities and an unpinned Fermi level at the interface that allows modulation of the surface potential of Ge. Ultra-thin films of epitaxial SrZrO3 can thus be explored as a potential gate dielectric for Ge.

Unified computational model of transport in metal-insulating oxide-metal systems

NASA Astrophysics Data System (ADS)

Tierney, B. D.; Hjalmarson, H. P.; Jacobs-Gedrim, R. B.; Agarwal, Sapan; James, C. D.; Marinella, M. J.

2018-04-01

A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift-diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. Finally, an explanation of ReRAM bipolar switching behavior based on these results is proposed.

Advanced Precipitation Radar Antenna to Measure Rainfall From Space

NASA Technical Reports Server (NTRS)

Rahmat-Samii, Yahya; Lin, John; Huang, John; Im, Eastwood; Lou, Michael; Lopez, Bernardo; Durden, Stephen

2008-01-01

To support NASA s planned 20-year mission to provide sustained global precipitation measurement (EOS-9 Global Precipitation Measurement (GPM)), a deployable antenna has been explored with an inflatable thin-membrane structure. This design uses a 5.3 5.3-m inflatable parabolic reflector with the electronically scanned, dual-frequency phased array feeds to provide improved rainfall measurements at 2.0-km horizontal resolution over a cross-track scan range of up to 37 , necessary for resolving intense, isolated storm cells and for reducing the beam-filling and spatial sampling errors. The two matched radar beams at the two frequencies (Ku and Ka bands) will allow unambiguous retrieval of the parameters in raindrop size distribution. The antenna is inflatable, using rigidizable booms, deployable chain-link supports with prescribed curvatures, a smooth, thin-membrane reflecting surface, and an offset feed technique to achieve the precision surface tolerance (0.2 mm RMS) for meeting the low-sidelobe requirement. The cylindrical parabolic offset-feed reflector augmented with two linear phased array feeds achieves dual-frequency shared-aperture with wide-angle beam scanning and very low sidelobe level of -30 dB. Very long Ku and Ka band microstrip feed arrays incorporating a combination of parallel and series power divider lines with cosine-over-pedestal distribution also augment the sidelobe level and beam scan. This design reduces antenna mass and launch vehicle stowage volume. The Ku and Ka band feed arrays are needed to achieve the required cross-track beam scanning. To demonstrate the inflatable cylindrical reflector with two linear polarizations (V and H), and two beam directions (0deg and 30deg), each frequency band has four individual microstrip array designs. The Ku-band array has a total of 166x2 elements and the Ka-band has 166x4 elements with both bands having element spacing about 0.65 lambda(sub 0). The cylindrical reflector with offset linear array feeds reduces the complexity from "NxN" transmit/receive (T/R) modules of a conventional planar-phased array to just "N" T/R modules. The antenna uses T/R modules with electronic phase-shifters for beam steering. The offset reflector does not provide poor cross-polarization like a double- curved offset reflector would, and it allows the wide scan angle in one plane required by the mission. Also, the cylindrical reflector with two linear array feeds provides dual-frequency performance with a single, shared aperture. The aperture comprises a reflective surface with a focal length of 1.89 m and is made from aluminized Kapton film. The reflective surface is of uniform thickness in the range of a few thousandths of an inch and is attached to the chain-link support structure via an adjustable suspension system. The film aperture rolls up, together with the chain-link structure, for launch and can be deployed in space by the deployment of the chain-link structure.

BAnd offset and magnetic property engineering for epitaxial interfaces: a Monolayer of M2O3 (M=Al, Ga, Sc, Ti, Ni) at the alpha-Fe203/alpha-Cr203 (0001) Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaffe, John E; Bachorz, Rafal A; Gutowski, Maciej S

2007-05-01

We have used density functional theory with the gradient corrected exchange-correlation functional PW91 to study the effect of an interfactant layer, where Fe and Cr are replaced by a different metal, on electronic and magnetic properties of an epitaxial interface between -Fe2O3 and -Cr2O3 in the hexagonal (0001) basal plane. We studied a monolayer of M2O3 (M=Al, Ga, Sc, Ti, Ni) sandwiched with 5 layers of chromia and five layers of hematite through epitaxial interfaces of two types, termed “oxygen divided” or “split metal.” We found that both the magnetic and electronic properties of the superlattice are modified by themore » interfactant monolayer. For the split metal interface, which is favored through the growth pattern of chromia and hematite, the band offset can be changed from 0.62 eV (no interfactant) up to 0.90 eV with the Sc2O3 interfactant, and down to –0.51 eV (i.e. the a-Fe2O3/a-Cr2O3 heterojunction changes from Type II to Type I) with the Ti2O3 interfactant, due to a massive interfacial charge transfer. The band gap of the system as a whole remains open for the interfactant monolayers based on Al, Ga, and Sc, but it closes for Ti. For Ni, the split-metal interface has a negative band offset and a small band gap. Thus, nanoscale engineering through layer-by-layer growth will strongly affect the macroscopic properties of this system.« less

Using SOTEM Method to Detect BIF Bodies Buried Under Very Thick and Conductive Quaternary Sediments, Huoqiu Deposit, China

NASA Astrophysics Data System (ADS)

Chen, Weiying; Xue, Guoqiang; Khan, Muhammad Younis; Li, Hai

2017-03-01

Huoqiu iron deposit is a typical Precambrian banded iron-formation (BIF) field which is located in the North China Craton (NCC). To detect the deep ore bodies around Dawangzhuang Village in Yingshang County, north of the Huoqiu deposit field, electromagnetic methods were tested. As the ore bodies are buried under very thick conductive Quaternary sediments, the use of EM methods is a great challenge. Short-offset transient electromagnetic method (SOTEM) was applied in the area as we wanted to test due to its detection depth and resolution. A 2D model was first built according to the geology information and magnetic measurement results. Then, 2D forward and 1D inversion were carried out using FDTD and Occam's algorithm, respectively. The synthetic modeling results helped us with the survey design and interpretation. Two 1400-m-long survey lines with offset of 500 and 1000 m were laid perpendicular to the BIF's strike, and the transmitting parameters were selected by a test measurement at the vicinity of a local village. Finally, the structure of survey area and BIF bodies were determined based on the 1D inversion results of real data, and showed a consistency with the subsequent drill results. Our application of SOTEM in detecting hidden BIF buried under very thick conductive layer has shown that the method is capable of penetrating great depth more than 1000 m even in a very conductive environment and will be an effective tool for deep resources investigation.

Landsat-7 ETM+ radiometric stability and absolute calibration

USGS Publications Warehouse

Markham, B.L.; Barker, J.L.; Barsi, J.A.; Kaita, E.; Thome, K.J.; Helder, D.L.; Palluconi, Frank Don; Schott, J.R.; Scaramuzza, Pat; ,

2002-01-01

Launched in April 1999, the Landsat-7 ETM+ instrument is in its fourth year of operation. The quality of the acquired calibrated imagery continues to be high, especially with respect to its three most important radiometric performance parameters: reflective band instrument stability to better than ??1%, reflective band absolute calibration to better than ??5%, and thermal band absolute calibration to better than ??0.6 K. The ETM+ instrument has been the most stable of any of the Landsat instruments, in both the reflective and thermal channels. To date, the best on-board calibration source for the reflective bands has been the Full Aperture Solar Calibrator, which has indicated changes of at most -1.8% to -2.0% (95% C.I.) change per year in the ETM+ gain (band 4). However, this change is believed to be caused by changes in the solar diffuser panel, as opposed to a change in the instrument's gain. This belief is based partially on ground observations, which bound the changes in gain in band 4 at -0.7% to +1.5%. Also, ETM+ stability is indicated by the monitoring of desert targets. These image-based results for four Saharan and Arabian sites, for a collection of 35 scenes over the three years since launch, bound the gain change at -0.7% to +0.5% in band 4. Thermal calibration from ground observations revealed an offset error of +0.31 W/m 2 sr um soon after launch. This offset was corrected within the U. S. ground processing system at EROS Data Center on 21-Dec-00, and since then, the band 6 on-board calibration has indicated changes of at most +0.02% to +0.04% (95% C.I.) per year. The latest ground observations have detected no remaining offset error with an RMS error of ??0.6 K. The stability and absolute calibration of the Landsat-7 ETM+ sensor make it an ideal candidate to be used as a reference source for radiometric cross-calibrating to other land remote sensing satellite systems.

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and leadmore » to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

Theoretical investigation of the structural, electronic, and thermodynamic properties of CdS1-xSex alloys

NASA Astrophysics Data System (ADS)

Long, Debing; Li, Mingkai; Meng, Dongxue; Ahuja, Rajeev; He, Yunbin

2018-03-01

In this work, the structural, electronic, and thermodynamic properties of wurtzite (WZ) and zincblende (ZB) CdS1-xSex alloys are investigated using the density functional theory (DFT) and the cluster expansion method. A special quasirandom structure containing 16 atoms is constructed to calculate the band structures of random alloys. The band gaps of CdS1-xSex alloys are direct and decrease as the Se content increases. The delta self-consistent-field method is applied to correct band gaps that are underestimated by DFT. The band offsets clearly reflect the variation in valence band maxima and conduction band minima, thus providing information useful to the design of relevant quantum well structures. The positive formation enthalpies of both phases imply that CdS1-xSex is an immiscible system and tends to phase separate. The influence of lattice vibrations on the phase diagram is investigated by calculating the phonon density of states. Lattice vibration effects can reduce the critical temperature Tc and increase alloy solid solubilities. This influence is especially significant in the ZB structure. When only chemical interactions are present, the Tc values for WZ- and ZB-CdS1-xSex are 260 K and 249 K, respectively. The lattice vibration enthalpy and entropy lower the Tc to 255 K and 233 K, respectively.

Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Zhang, Kexiong; Liao, Meiyong; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

2016-11-01

The interfacial chemical state and the band alignment of the sputtering-deposited CaF2/p-GaN hetero-structure were investigated by angle-resolved X-ray photoelectron spectroscopy. The dependence of Ga 3p core-level positions on the collection angles proves that the downward band bending of p-GaN is reduced from 1.51 to 0.85 eV after the deposition of CaF2, which may be due to the reduction of Mg-Ga-O-related interface states by the oxygen-free deposition of CaF2. The band gap of sputtering-deposited CaF2 is estimated to be about 7.97 eV with a potential gradient of 0.48 eV obtained by the variation of the Ca 2p3/2 position on different collection angles. By taking into account the p-GaN surface band bending and potential gradient in the CaF2 layer, large valence and conduction band offsets of 2.66 ± 0.20 and 1.92 ± 0.20 eV between CaF2 and p-GaN are obtained. These results indicate that CaF2 is a promising gate dielectric layer on the p-GaN for the application of metal-insulator-semiconductor devices.

Ab Initio Simulation of Charge Transfer at the Semiconductor Quantum Dot/TiO 2 Interface in Quantum Dot-Sensitized Solar Cells

DOE PAGES

Xin, Xukai; Li, Bo; Jung, Jaehan; ...

2014-07-24

Quantum dot-sensitized solar cells (QDSSCs) have emerged as a promising solar architecture for next-generation solar cells. The QDSSCs exhibit a remarkably fast electron transfer from the quantum dot (QD) donor to the TiO 2 acceptor with size quantization properties of QDs that allows for the modulation of band energies to control photoresponse and photoconversion efficiency of solar cells. In order to understand the mechanisms that underpin this rapid charge transfer, the electronic properties of CdSe and PbSe QDs with different sizes on the TiO 2 substrate are simulated using a rigorous ab initio density functional method. Our method capitalizes onmore » localized orbital basis set, which is computationally less intensive. Quite intriguingly, a remarkable set of electron bridging states between QDs and TiO 2 occurring via the strong bonding between the conduction bands of QDs and TiO 2 is revealed. Such bridging states account for the fast adiabatic charge transfer from the QD donor to the TiO 2 acceptor, and may be a general feature for strongly coupled donor/acceptor systems. All the QDs/TiO 2 systems exhibit type II band alignments, with conduction band offsets that increase with the decrease in QD size. This facilitates the charge transfer from QDs donors to TiO 2 acceptors and explains the dependence of the increased charge transfer rate with the decreased QD size.« less

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment.

PubMed

Zhang, Zhaofu; Qian, Qingkai; Li, Baikui; Chen, Kevin J

2018-05-23

Interface engineering is a key strategy to deal with the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure, since the properties of this atomic-layer-thick 2D material can easily be impacted by the substrate environment. In this work, the structural, electronic, and optical properties of the 2D/3D heterostructure of monolayer MoS 2 on wurtzite GaN surface without and with nitridation interfacial layer are systematically investigated by first-principles calculation and experimental analysis. The nitridation interfacial layer can be introduced into the 2D/3D heterostructure by remote N 2 plasma treatment to GaN sample surface prior to stacking monolayer MoS 2 on top. The calculation results reveal that the 2D/3D integrated heterostructure is energetically favorable with a negative formation energy. Both interfaces demonstrate indirect band gap, which is a benefit for longer lifetime of the photoexcited carriers. Meanwhile, the conduction band edge and valence band edge of the MoS 2 side increases after nitridation treatment. The modification to band alignment is then verified by X-ray photoelectron spectroscopy measurement on MoS 2 /GaN heterostructures constructed by a modified wet-transfer technique, which indicates that the MoS 2 /GaN heterostructure without nitridation shows a type-II alignment with a conduction band offset (CBO) of only 0.07 eV. However, by the deployment of interface nitridation, the band edges of MoS 2 move upward for ∼0.5 eV as a result of the nitridized substrate property. The significantly increased CBO could lead to better electron accumulation capability at the GaN side. The nitridized 2D/3D heterostructure with effective interface treatment exhibits a clean band gap and substantial optical absorption ability and could be potentially used as practical photocatalyst for hydrogen generation by water splitting using solar energy.

Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

NASA Technical Reports Server (NTRS)

Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

2001-01-01

Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(sub x)V(sub 1-x) alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(sub x)V(sub 1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(sub x)Te(sub 1-x) and ZnSe(sub y)Te(sub 1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(sub y)Te(sub 1-y) alloys in the entire composition range, y between 0 and 1. The samples used in this study are bulk ZnSe(sub y)Te(sub 1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k(sup dot)p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(sub y)Te(sub 1-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.

Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

NASA Technical Reports Server (NTRS)

Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Ramdas, A.; Su, Ching-Hua; Whitaker, Ann F. (Technical Monitor)

2001-01-01

Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(x)V(1-x), alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(x),V(1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(x)Te(l-x) and ZnSe(Y)Te(1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(y)Te(1-y) alloys in the entire composition range, 0 less than or equal to y less than or equal to 1. The samples used in this study are bulk ZnSe(y)Te(1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(y)Te(l-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.

Band alignments of different buffer layers (CdS, Zn(O,S), and In{sub 2}S{sub 3}) on Cu{sub 2}ZnSnS{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Chang; Liu, Fangyang; Song, Ning

2014-04-28

The heterojunctions of different n-type buffers, i.e., CdS, Zn(O,S), and In{sub 2}S{sub 3} on p-type Cu{sub 2}ZnSnS{sub 4} (CZTS) were investigated using X-ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) Measurements. The band alignment of the heterojunctions formed between CZTS and the buffer materials was carefully measured. The XPS data were used to determine the Valence Band Offsets (VBO) of different buffer/CZTS heterojunctions. The Conduction Band Offset (CBO) was calculated indirectly by XPS data and directly measured by NEXAFS characterization. The CBO of the CdS/CZTS heterojunction was found to be cliff-like with CBO{sub XPS} = −0.24 ± 0.10 eV and CBO{submore » NEXAFS} = −0.18 ± 0.10 eV, whereas those of Zn(O,S) and In{sub 2}S{sub 3} were found to be spike-like with CBO{sub XPS} = 0.92 ± 0.10 eV and CBO{sub NEXAFS} = 0.87 ± 0.10 eV for Zn(O,S)/CZTS and CBO{sub XPS} = 0.41 ± 0.10 eV for In{sub 2}S{sub 3}/CZTS, respectively. The CZTS photovoltaic device using the spike-like In{sub 2}S{sub 3} buffer was found to yield a higher open circuit voltage (Voc) than that using the cliff-like CdS buffer. However, the CBO of In{sub 2}S{sub 3}/CZTS is slightly higher than the optimum level and thus acts to block the flow of light-generated electrons, significantly reducing the short circuit current (Jsc) and Fill Factor (FF) and thereby limiting the efficiency. Instead, the use of a hybrid buffer for optimization of band alignment is proposed.« less

Band-offsets at BaTiO3/Cu2O heterojunction and enhanced photoelectrochemical response: theory and experiment(Conference Presentation)

NASA Astrophysics Data System (ADS)

Sharma, Dipika; Satsangi, Vibha R.; Dass Kaura, Sahab; Shrivastav, Rohit; Waghmare, Umesh V.

2016-10-01

Band-offsets at BaTiO3/Cu2O heterojunction and enhanced photoelectrochemical response: theory and experiment Dipika Sharmaa, Vibha R. Satsangib, Rohit Shrivastava, Umesh V. Waghmarec, Sahab Dassa aDepartment of Chemistry, Dayalbagh Educational Institute, Agra-282 110 (India) bDepartment of Physics and Computer Sciences, Dayalbagh Educational Institute, Agra-282 110 (India) cTheoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560 064 (India) * Phone: +91-9219695960. Fax: +91-562-2801226. E-mail: drsahabdas@gmail.com. Study on photoelectrochemical activity of pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction has been carried out using DFT based band offsets and charge carriers effective mass calculations and their experimental verification. The results of DFT calculations show that BaTiO3 and Cu2O have staggered type band alignment after the heterojunction formation and high mobility of electrons in Cu2O as compared to the electrons in BaTiO3. Staggered type band edges alignment and high mobility of electrons and holes improved the separation of photo-generated charge carriers in BaTiO3/Cu2O heterojunction. To validate the theoretical results experiments were carried out on pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction with varying thickness of Cu2O. All samples were characterized by X- Ray Diffractometer, SEM and UV-Vis spectrometry. Nanostructured thin films of pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction were used as photoelectrode in the photoelectrochemical cell for water splitting reaction. Maximum photocurrent density of 1.44 mA/cm2 at 0.90 V/SCE was exhibited by 442 nm thick BaTiO3/Cu2O heterojunction photoelectrode Increased photocurrent density and enhanced photoconversion efficiency, exhibited by the heterojunction may be attributed to improved conductivity and enhanced separation of the photogenerated carriers at the BaTiO3/Cu2O interface. The experimental results and first-principles calculations compare well, thus suggesting that such calculations have the potential to be used in screening various metal oxide heterojunction before performing the experiments thereby saving precious chemicals, time and energy. Keywords: Photoelectrochemical, Water splitting, heterojunction, Cu2O, BaTiO3 References: [1] Surbhi Choudhary, et al. Nanostructured bilayered thin films in photoelectrochemical water splitting - A review: International Journal of Hydrogen Energy, (2012). [2] Dipika Sharma, Anuradha Verma, V.R. Satsangi, Rohit shrivastav, Sahab Dass Nanostructured SrTiO3 thin films sensitized by Cu2O for Photoelectrochemical Hydrogen Generation. International journal of Hydrogen Energy;42:,4230-4241, 2014.

Evaluation of LANDSAT-4 TM and MSS ground geometry performance without ground control

NASA Technical Reports Server (NTRS)

Bryant, N. A.; Zobrist, A.

1983-01-01

LANDSAT thematic mapper P-data of Washington, D.C., Harrisburg, PA, and Salton Sea, CA were analyzed to determine magnitudes and causes of error in the geometric conformity of the data to known earth-surface geometry. Several tests of data geometry were performed. Intra-band and inter-band correlation and registration were investigated, exclusive of map-based ground truth. Specifically, the magnitudes and statistical trends of pixel offsets between a single band's mirror scans (due to processing procedures) were computed, and the inter-band integrity of registration was analyzed.

Modeling and experimental studies of a side band power re-injection locked magnetron

NASA Astrophysics Data System (ADS)

Ye, Wen-Jun; Zhang, Yi; Yuan, Ping; Zhu, Hua-Cheng; Huang, Ka-Ma; Yang, Yang

2016-12-01

A side band power re-injection locked (SBPRIL) magnetron is presented in this paper. A tuning stub is placed between the external injection locked (EIL) magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell (PIC) simulation of a 10-vane continuous wave (CW) magnetron model is presented. Computer simulation predicts that the frequency spectrum’s peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

Landslide movement mapping by sub-pixel amplitude offset tracking - case study from Corvara landslide

NASA Astrophysics Data System (ADS)

Darvishi, Mehdi; Schlögel, Romy; Cuozzo, Giovanni; Callegari, Mattia; Thiebes, Benni; Bruzzone, Lorenzo; Mulas, Marco; Corsini, Alessandro; Mair, Volkmar

2016-04-01

Despite the advantages of Differential Synthetic Aperture Radar Interferometry (DInSAR) methods for quantifying landslide deformation over large areas, some limitations remain. These include for example geometric distortions, atmospheric artefacts, geometric and temporal decorrelations, data and scale constraints, and the restriction that only 1-dimentional line-of-sight (LOS) deformations can be measured. At local scale, the major limitations are dense vegetation, as well as large displacement rates which can lead to decorrelation between SAR acquisitions also for high resolution images and temporal baselines. Sub-pixel offset tracking was proposed to overcome some of these limitations. Two of the most important advantages of this technique are the mapping of 2-D displacements (azimuth and range directions), and the fact that there is no need for complex phase unwrapping algorithms which could give wrong results or fail in case of decorrelation or fast ground deformations. As sub-pixel offset tracking is highly sensitive to the spatial resolution of the data, latest generations of SAR sensors such as TerraSAR-X and COSMO-SkyMed providing high resolution data (up to 1m) have great potential to become established methods in the field of ground deformation monitoring. In this study, sub-pixel offset tracking was applied to COSMO SkyMed X-band imagery in order to quantify ground displacements and to evaluate the feasibility of offset tracking for landslide movement mapping and monitoring. The study area is the active Corvara landslide located in the Italian Alps, described as a slow-moving and deep-seated landslide with annual displacement rates of up to 20 m. Corner reflectors specifically designed for X-band were installed on the landslide and used as reference points for sub-pixel offset tracking. Satellite images covering the period from 2013 to 2015 were analyzed with an amplitude tracking tool for calculating the offsets and extracting 2-D displacements. Sub-pixel offset tracking outputs were integrated with DInSAR results and correlated to differential GPS measurements recorded at the same time as the SAR data acquisitions.

Visualisation and analysis of shear-deformation bands in unconsolidated Pleistocene sand using ground-penetrating radar: Implications for paleoseismological studies

NASA Astrophysics Data System (ADS)

Brandes, Christian; Igel, Jan; Loewer, Markus; Tanner, David C.; Lang, Jörg; Müller, Katharina; Winsemann, Jutta

2018-05-01

Deformation bands in unconsolidated sediments are of great value for paleoseismological studies in sedimentary archives. Using ground-penetrating radar (GPR), we investigated an array of shear-deformation bands that developed in unconsolidated Pleistocene glacifluvial Gilbert-type delta sediments. A dense grid (spacing 0.6 m) of GPR profiles was measured on top of a 20 m-long outcrop that exposes shear-deformation bands. Features in the radargrams could be directly tied to the exposure. The shear-deformation bands are partly represented by inclined reflectors and partly by the offset of reflections at delta clinoforms. 3-D interpretation of the 2-D radar sections shows that the bands have near-planar geometries that can be traced throughout the entire sediment volume. Thin sections of sediment samples show that the analysed shear-deformation bands have a denser grain packing than the host sediment. Thus they have a lower porosity and smaller pore sizes and therefore, in the vadose zone, the deformation bands have a higher water content due to enhanced capillary forces. This, together with the partially-developed weak calcite cementation and the distinct offset along the bands, are likely the main reasons for the clear and unambiguous expression of the shear-deformation bands in the radar survey. The study shows that deformation-band arrays can clearly be detected using GPR and quickly mapped over larger sediment volumes. With the 3-D analysis, it is further possible to derive the orientation and geometry of the bands. This allows correlation of the bands with the regional fault trend. Studying deformation bands in unconsolidated sediments with GPR is therefore a powerful approach in paleoseismological studies. Based on our data, we postulate that the outcrop is part of a dextral strike-slip zone that was reactivated by glacial isostatic adjustment.

106 17 Telemetry Standards Chapter 2

DTIC Science & Technology

2017-07-31

high frequency STC space -time code SOQPSK shaped offset quadrature phase shift keying UHF ultra- high frequency US&P United States...and Possessions VCO voltage-controlled oscillator VHF very- high frequency WCS Wireless Communication Service Telemetry Standards, RCC Standard...get interference. a. Telemetry Bands Air and space -to-ground telemetering is allocated in the ultra- high frequency (UHF) bands 1435 to 1535, 2200

Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

NASA Astrophysics Data System (ADS)

Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

2018-03-01

Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Webster, P. T.; Riordan, N. A.; Liu, S.

2015-12-28

The structural and optical properties of lattice-matched InAs{sub 0.911}Sb{sub 0.089} bulk layers and strain-balanced InAs/InAs{sub 1−x}Sb{sub x} (x ∼ 0.1–0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffraction, spectroscopic ellipsometry, and temperature dependent photoluminescence spectroscopy. The photoluminescence and ellipsometry measurements determine the ground state bandgap energy and the X-ray diffraction measurements determine the layer thickness and mole fraction of the structures studied. Detailed modeling of the X-ray diffraction data is employed to quantify unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattices. A Kronig-Penney model of the superlattice miniband structure ismore » used to analyze the valence band offset between InAs and InAsSb, and hence the InAsSb band edge positions at each mole fraction. The resulting composition dependence of the bandgap energy and band edge positions of InAsSb are described using the bandgap bowing model; the respective low and room temperature bowing parameters for bulk InAsSb are 938 and 750 meV for the bandgap, 558 and 383 meV for the conduction band, and −380 and −367 meV for the valence band.« less

Radiometric calibration status of Landsat-7 and Landsat-5

USGS Publications Warehouse

Barsi, J.A.; Markham, B.L.; Helder, D.L.; Chander, G.

2007-01-01

Launched in April 1999, Landsat-7 ETM+ continues to acquire data globally. The Scan Line Corrector in failure in 2003 has affected ground coverage and the recent switch to Bumper Mode operations in April 2007 has degraded the internal geometric accuracy of the data, but the radiometry has been unaffected. The best of the three on-board calibrators for the reflective bands, the Full Aperture Solar Calibrator, has indicated slow changes in the ETM+, but this is believed to be due to contamination on the panel rather then instrument degradation. The Internal Calibrator lamp 2, though it has not been used regularly throughout the whole mission, indicates smaller changes than the FASC since 2003. The changes indicated by lamp 2 are only statistically significant in band 1, circa 0.3% per year, and may be lamp as opposed to instrument degradations. Regular observations of desert targets in the Saharan and Arabian deserts indicate the no change in the ETM+ reflective band response, though the uncertainty is larger and does not preclude the small changes indicated by lamp 2. The thermal band continues to be stable and well-calibrated since an offset error was corrected in late-2000. Launched in 1984, Landsat-5 TM also continues to acquire global data; though without the benefit of an on-board recorder, data can only be acquired where a ground station is within range. Historically, the calibration of the TM reflective bands has used an onboard calibration system with multiple lamps. The calibration procedure for the TM reflective bands was updated in 2003 based on the best estimate at the time, using only one of the three lamps and a cross-calibration with Landsat-7 ETM+. Since then, the Saharan desert sites have been used to validate this calibration model. Problems were found with the lamp based model of up to 13% in band 1. Using the Saharan data, a new model was developed and implemented in the US processing system in April 2007. The TM thermal band was found to have a calibration offset error of 0.092 W/m 2 sr ??m (0.68K at 300K) based on vicarious calibration data between 1999 and 2006. The offset error was corrected in the US processing system on April 2007 for all data acquired since April 1999.

Initial results of centralized autonomous orbit determination of the new-generation BDS satellites with inter-satellite link measurements

NASA Astrophysics Data System (ADS)

Tang, Chengpan; Hu, Xiaogong; Zhou, Shanshi; Liu, Li; Pan, Junyang; Chen, Liucheng; Guo, Rui; Zhu, Lingfeng; Hu, Guangming; Li, Xiaojie; He, Feng; Chang, Zhiqiao

2018-01-01

Autonomous orbit determination is the ability of navigation satellites to estimate the orbit parameters on-board using inter-satellite link (ISL) measurements. This study mainly focuses on data processing of the ISL measurements as a new measurement type and its application on the centralized autonomous orbit determination of the new-generation Beidou navigation satellite system satellites for the first time. The ISL measurements are dual one-way measurements that follow a time division multiple access (TDMA) structure. The ranging error of the ISL measurements is less than 0.25 ns. This paper proposes a derivation approach to the satellite clock offsets and the geometric distances from TDMA dual one-way measurements without a loss of accuracy. The derived clock offsets are used for time synchronization, and the derived geometry distances are used for autonomous orbit determination. The clock offsets from the ISL measurements are consistent with the L-band two-way satellite, and time-frequency transfer clock measurements and the detrended residuals vary within 0.5 ns. The centralized autonomous orbit determination is conducted in a batch mode on a ground-capable server for the feasibility study. Constant hardware delays are present in the geometric distances and become the largest source of error in the autonomous orbit determination. Therefore, the hardware delays are estimated simultaneously with the satellite orbits. To avoid uncertainties in the constellation orientation, a ground anchor station that "observes" the satellites with on-board ISL payloads is introduced into the orbit determination. The root-mean-square values of orbit determination residuals are within 10.0 cm, and the standard deviation of the estimated ISL hardware delays is within 0.2 ns. The accuracy of the autonomous orbits is evaluated by analysis of overlap comparison and the satellite laser ranging (SLR) residuals and is compared with the accuracy of the L-band orbits. The results indicate that the radial overlap differences between the autonomous orbits are less than 15.0 cm for the inclined geosynchronous orbit (IGSO) satellites and less than 10.0 cm for the MEO satellites. The SLR residuals are approximately 15.0 cm for the IGSO satellites and approximately 10.0 cm for the MEO satellites, representing an improvement over the L-band orbits.

How economic contexts shape calculations of yield in biodiversity offsetting.

PubMed

Carver, L; Sullivan, S

2017-10-01

We examined and analyzed methods used to create numerical equivalence between sites affected by development and proposed conservation offset sites. Application of biodiversity offsetting metrics in development impact and mitigation assessments is thought to standardize biodiversity conservation outcomes, sometimes termed yield by those conducting these calculations. The youth of biodiversity offsetting in application, however, means little is known about how biodiversity valuations and offset contracts between development and offset sites are agreed on in practice or about long-term conservation outcomes. We examined how sites were made commensurable and how biodiversity gains or yields were calculated and negotiated for a specific offset contract in a government-led pilot study of biodiversity offsets in England. Over 24 months, we conducted participant observations of various stages in the negotiation of offset contracts through repeated visits to 3 (anonymized) biodiversity offset contract sites. We conducted 50 semistructured interviews of stakeholders in regional and local government, the private sector, and civil society. We used a qualitative data analysis software program (DEDOOSE) to textually analyze interview transcriptions. We also compared successive iterations of biodiversity-offsetting calculation spreadsheets and planning documents. A particular focus was the different iterations of a specific biodiversity impact assessment in which the biodiversity offsetting metric developed by the U.K.'s Department for Environment, Food and Rural Affairs was used. We highlight 3 main findings. First, biodiversity offsetting metrics were amended in creative ways as users adapted inputs to metric calculations to balance and negotiate conflicting requirements. Second, the practice of making different habitats equivalent to each other through the application of biodiversity offsetting metrics resulted in commensuration outcomes that may not provide projected conservation gains. Third, the pressure of creating value for money diminished projected conservation yields. © 2017 The Authors. Conservation Biology published by Wiley Periodicals, Inc. on behalf of Society for Conservation Biology.

10 CFR 1015.203 - Collection by administrative offset.

Code of Federal Regulations, 2011 CFR

2011-01-01

...-centralized administrative offsets conducted under paragraph (c) of this section, DOE first learns of the... cooperative efforts of other agencies in effecting collection by administrative offset. (3) When collecting...

SNPP VIIRS Spectral Bands Co-Registration and Spatial Response Characterization

NASA Technical Reports Server (NTRS)

Lin, Guoqing; Tilton, James C.; Wolfe, Robert E.; Tewari, Krishna P.; Nishihama, Masahiro

2013-01-01

The Visible Infrared Imager Radiometer Suite (VIIRS) instrument onboard the Suomi National Polar-orbiting Partnership (SNPP) satellite was launched on 28 October 2011. The VIIRS has 5 imagery spectral bands (I-bands), 16 moderate resolution spectral bands (M-bands) and a panchromatic day/night band (DNB). Performance of the VIIRS spatial response and band-to-band co-registration (BBR) was measured through intensive pre-launch tests. These measurements were made in the non-aggregated zones near the start (or end) of scan for the I-bands and M-bands and for a limited number of aggregation modes for the DNB in order to test requirement compliance. This paper presents results based on a recently re-processed pre-launch test data. Sensor (detector) spatial impulse responses in the scan direction are parameterized in terms of ground dynamic field of view (GDFOV), horizontal spatial resolution (HSR), modulation transfer function (MTF), ensquared energy (EE) and integrated out-of-pixel (IOOP) spatial response. Results are presented for the non-aggregation, 2-sample and 3-sample aggregation zones for the I-bands and M-bands, and for a limited number of aggregation modes for the DNB. On-orbit GDFOVs measured for the 5 I-bands in the scan direction using a straight bridge are also presented. Band-to-band co-registration (BBR) is quantified using the prelaunch measured band-to-band offsets. These offsets may be expressed as fractions of horizontal sampling intervals (HSIs), detector spatial response parameters GDFOV or HSR. BBR bases on HSIs in the non-aggregation, 2-sample and 3-sample aggregation zones are presented. BBR matrices based on scan direction GDFOV and HSR are compared to the BBR matrix based on HSI in the non-aggregation zone. We demonstrate that BBR based on GDFOV is a better representation of footprint overlap and so this definition should be used in BBR requirement specifications. We propose that HSR not be used as the primary image quality indicator, since we show that it is neither an adequate representation of the size of sensor spatial response nor an adequate measure of imaging quality.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

PubMed

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Preliminary Evaluation of the Radiometric Calibration of LANDSAT-4 Thematic Mapper Data by the Canada Centre for Remote Sensing

NASA Technical Reports Server (NTRS)

Murphy, J.; Park, W.; Fitzgerald, A.

1985-01-01

The radiometric characteristics of the LANDSAT-4 TM sensor are being studied with a view to developing absolute and relative radiometric calibration procedures. Preliminary results from several different approaches to the relative correction of all detectors within each band are reported. Topics covered include: the radiometric correction method; absolute calibration; the relative radiometric calibration algorithm; relative gain and offset calibration; relative gain and offset observations; and residual radiometric stripping.

A narrow-band injection-seeded pulsed titanium:sapphire oscillator-amplifier system with on-line chirp analysis for high-resolution spectroscopy.

PubMed

Hannemann, S; van Duijn, E-J; Ubachs, W

2007-10-01

A narrow-band tunable injection-seeded pulsed titanium:sapphire laser system has been developed for application in high-resolution spectroscopic studies at the fundamental wavelengths in the near infrared as well as in the ultraviolet, deep ultraviolet, and extreme ultraviolet after upconversion. Special focus is on the quantitative assessment of the frequency characteristics of the oscillator-amplifier system on a pulse-to-pulse basis. Frequency offsets between continuous-wave seed light and the pulsed output are measured as well as linear chirps attributed mainly to mode pulling effects in the oscillator cavity. Operational conditions of the laser are found in which these offset and chirp effects are minimal. Absolute frequency calibration at the megahertz level of accuracy is demonstrated on various atomic and molecular resonance lines.

Exploring the effect of band alignment and surface states on photoinduced electron transfer from CuInS2/CdS core/shell quantum dots to TiO2 electrodes.

PubMed

Sun, Mingye; Zhu, Dehua; Ji, Wenyu; Jing, Pengtao; Wang, Xiuying; Xiang, Weidong; Zhao, Jialong

2013-12-11

Photoinduced electron transfer (ET) processes from CuInS2/CdS core/shell quantum dots (QDs) with different core sizes and shell thicknesses to TiO2 electrodes were investigated by time-resolved photoluminescence (PL) spectroscopy. The ET rates and efficiencies from CuInS2/CdS QDs to TiO2 were superior to those of CuInS2/ZnS QDs. An enhanced ET efficiency was surprisingly observed for 2.0 nm CuInS2 core QDs after growth of the CdS shell. On the basis of the experimental and theoretical analysis, the improved performances of CuInS2/CdS QDs were attributed to the passivation of nonradiative traps by overcoating shell and enhanced delocalization of electron wave function from core to CdS shell due to lower conduction band offset. These results indicated that the electron distribution regulated by the band alignment between core and shell of QDs and the passivation of surface defect states could improve ET performance between donor and acceptor.

Band alignment of semiconductors and insulators using dielectric-dependent hybrid functionals: Toward high-throughput evaluation

NASA Astrophysics Data System (ADS)

Hinuma, Yoyo; Kumagai, Yu; Tanaka, Isao; Oba, Fumiyasu

2017-02-01

The band alignment of prototypical semiconductors and insulators is investigated using first-principles calculations. A dielectric-dependent hybrid functional, where the nonlocal Fock exchange mixing is set at the reciprocal of the static electronic dielectric constant and the exchange correlation is otherwise treated as in the Perdew-Burke-Ernzerhof (PBE0) hybrid functional, is used as well as the Heyd-Scuseria-Ernzerhof (HSE06) hybrid and PBE semilocal functionals. In addition, these hybrid functionals are applied non-self-consistently to accelerate calculations. The systems considered include C and Si in the diamond structure, BN, AlP, AlAs, AlSb, GaP, GaAs, InP, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe in the zinc-blende structure, MgO in the rocksalt structure, and GaN and ZnO in the wurtzite structure. Surface band positions with respect to the vacuum level, i.e., ionization potentials and electron affinities, and band offsets at selected zinc-blende heterointerfaces are evaluated as well as band gaps. The non-self-consistent approach speeds up hybrid functional calculations by an order of magnitude, while it is shown using HSE06 that the resultant band gaps and surface band positions are similar to the self-consistent results. The dielectric-dependent hybrid functional improves the band gaps and surface band positions of wide-gap systems over HSE06. The interfacial band offsets are predicted with a similar degree of precision. Overall, the performance of the dielectric-dependent hybrid functional is comparable to the G W0 approximation based on many-body perturbation theory in the prediction of band gaps and alignments for most systems. The present results demonstrate that the dielectric-dependent hybrid functional, particularly when applied non-self-consistently, is promising for applications to systematic calculations or high-throughput screening that demand both computational efficiency and sufficient accuracy.

Four-channel temperature and humidity microwave scanning radiometer

NASA Astrophysics Data System (ADS)

Xu, Pei-Yuan

1994-06-01

A compact four-channel microwave scanning radiometer for tropospheric remote sensing is being developed. A pair of 53.85 and 56.02 GHz and a pair of 23.87 and 31.65 GHz are adopted as temperature and humidity channels' frequencies respectively. For each pair of frequencies it has an offset reflector antenna and a Dicke-switching receiver. The pair of receivers is assembled in an enclosure, which is mounted on the rotating table of an azimuth mounting and the pair of antennas is connected with the rotating table of an azimuth mounting in the opposite side by a pair of elevation arms. Each antenna is composed of a 90 degree off-set paraboloid and a conical corrugated horn. Each antenna patterrn of four channels has nearly same HPBW, low side lobes, and low VSWR. The dual band humidity receiver is a time sharing type with 0.2K sensitivity at 1-sec integration time. The dual band temperature receiver is a band sharing type with 0.2K sensitivity at 10-sec integration time. The radiometer and observation are controlled by a single chip microcomputer to realize the unattended operation.

Modelling Ground Based X- and Ku-Band Observations of Tundra Snow

NASA Astrophysics Data System (ADS)

Kasurak, A.; King, J. M.; Kelly, R. E.

2012-12-01

As part of a radar-based remote sensing field experiment in Churchill, Manitoba ground based Ku- and X-band scatterometers were deployed to observe changing tundra snowpack conditions from November 2010 to March 2011. The research is part of the validation effort for the Cold Regions Hydrology High-resolution Observatory (CoReH2O) mission, a candidate in the European Space Agency's Earth Explorer program. This paper focuses on the local validation of the semi-empirical radiative transfer (sRT) model proposed for use in snow property retrievals as part of the CoReH2O mission. In this validation experiment, sRT was executed in the forward mode, simulating backscatter to assess the ability of the model. This is a necessary precursor to any inversion attempt. Two experiments are considered, both conducted in a hummocky tundra environment with shallow snow cover. In both cases, scatterometer observations were acquired over a field of view of approximately 10 by 20 meters. In the first experiment, radar observations were made of a snow field and then repeated after the snow had been removed. A ground-based scanning LiDAR system was used to characterize the spatial variability of snow depth through measurements of the snow and ground surface. Snow properties were determined in the field of view from two snow pits, 12 density core measurements, and Magnaprobe snow depth measurements. In the second experiment, a site was non-destructively observed from November through March, with snow properties measured out-of-scene, to characterize the snow evolution response. The model results from sRT fit the form of the observations from the two scatterometer field experiments but do not capture the backscatter magnitude. A constant offset for the season of 5 dB for X-band co- and cross-polarization response was required to match observations, in addition to a 3 dB X- and Ku-band co-polarization offset after the 6th of December. To explain these offsets, it is recognized that the two main physical processes represented by the model are snow volume scattering and ground surface reflectance. With a larger correction needed for X-band, where the ground portion of backscatter is expected to be larger, the contribution from the underlying soil is explored first. The ground contribution in sRT is computed using the semi-empirical Oh et al. (1992) model using permittivity from a temperate mineral soil based model. The ground response is tested against two observations of snow-removed tundra, and one observation of snow free tundra. A secondary analysis is completed using a modified sRT ground model, incorporating recent work on frozen organic permittivity by Mironov et al. (2010). Multi-scale surface roughness resulting from superimposed microtopography on regularly distributed hummocks is also addressed. These results demonstrate the applicability of microwave scattering models to tundra snowpacks underlain with peat, and demonstrate the applicability of the CoReH2O sRT model.

Cyclotron resonance in HgTe/CdTe-based heterostructures in high magnetic fields

PubMed Central

2012-01-01

Cyclotron resonance study of HgTe/CdTe-based quantum wells with both inverted and normal band structures in quantizing magnetic fields was performed. In semimetallic HgTe quantum wells with inverted band structure, a hole cyclotron resonance line was observed for the first time. In the samples with normal band structure, interband transitions were observed with wide line width due to quantum well width fluctuations. In all samples, impurity-related magnetoabsorption lines were revealed. The obtained results were interpreted within the Kane 8·8 model, the valence band offset of CdTe and HgTe, and the Kane parameter EP being adjusted. PMID:23013642

Hearing gain with a BAHA test-band in patients with single-sided deafness.

PubMed

Kim, Do-Youn; Kim, Tae Su; Shim, Byoung Soo; Jin, In Suk; Ahn, Joong Ho; Chung, Jong Woo; Yoon, Tae Hyun; Park, Hong Ju

2014-01-01

It is assumed that preoperative use of a bone-anchored hearing aid (BAHA) test-band will give a patient lower gain compared to real post-operative gain because of the reduction of energy through the scalp when using a test-band. Hearing gains using a BAHA test-band were analyzed in patients with unilateral hearing loss. Nineteen patients with unilateral sensorineural hearing loss were enrolled. A test-band, which was connected to BAHA Intenso with full-on gain, was put on the mastoid. Conventional air-conduction (AC) pure-tone averages (PTAs) and sound-field PTAs and speech reception thresholds (SRTs) were obtained in conditions A (the better ear naked), B (the better ear plugged), and C (the better ear plugged with a test-band on the poorer mastoid). Air-conduction PTAs of the poorer and better ears were 91 ± 19 and 18 ± 8 dB HL. Sound-field PTAs in condition B were higher than those in condition A (54 vs. 26 dB HL), which means that earplugs can block the sound grossly up to 54 dB HL through the better ears. The aided PTAs (24 ± 6 dB HL) in condition C were similar to those of the better ears in condition A (26±9 dB HL), though condition C showed higher thresholds at 500 Hz and lower thresholds at 1 and 2kHz when compared to condition A. The hearing thresholds using a test-band were similar to the published results of BAHA users with the volume to most comfortable level (MCL). Our findings showed that a BAHA test-band on the poorer ear could transmit sound to the cochlea as much as the better ears can hear. The increased functional gain at 1 and 2kHz reflects the technical characteristics of BAHA processor. The reduction of energy through the scalp when using a test-band seems to be offset by the difference of output by setting the volume to full-on gain and using a high-powered speech processor. Preoperative hearing gains using a test-band with full-on gain seems to be similar to the post-operative gains of BAHA users with the volume to MCL. © 2013.

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

PubMed

Ding, Yi-Min; Shi, Jun-Jie; Xia, Congxin; Zhang, Min; Du, Juan; Huang, Pu; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang

2017-10-05

To enhance the low hole mobility (∼40 cm 2 V -1 s -1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V -1 s -1 ) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 10 4 cm 2 V -1 s -1 , which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 10 3 cm 2 V -1 s -1 . The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lebedinskii, Yu. Yu.; National Research Nuclear University MEPhI; Chernikova, A. G.

2015-10-05

The tantalum oxide–platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state. We demonstrate the slow charging of the tantalum oxide in cases of Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces under the X-ray irradiation. This behavior is proposed to be related to the charge accumulation at oxygen vacancies induced traps. Based on the proposed methodology, we define the intrinsic conductive band offset (CBO) ∼1.3 eV (both for Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt) and CBO after the full saturation of the traps charging ∼0.5 eV, while the lastmore » one defines the energy position of charged traps below the bottom of conduction band. We demonstrate also the pining at the both Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces even in the “intrinsic” state, apparently induced by the presence of additional interfacial states. No shifts of Ta4f line and band alignment in over stoichiometric Ta{sub 2}O{sub 5+x}/Pt structure during X-ray irradiation, as well as the absence of pinning, resulting in increase of CBO up to 2.3 eV are found. This behavior is related to the PtO{sub 2} interfacing layer formation at Ta{sub 2}O{sub 5+x}/Pt, blocking the charging of the surface states and associated dipole formation.« less

Magnetic field structure around cores with very low luminosity objects

NASA Astrophysics Data System (ADS)

Soam, A.; Maheswar, G.; Lee, Chang Won; Dib, Sami; Bhatt, H. C.; Tamura, Motohide; Kim, Gwanjeong

2015-01-01

Aims: We carried out optical polarimetry of five dense cores, (IRAM 04191, L1521F, L328, L673-7, and L1014) which are found to harbour very low luminosity objects (VeLLOs; Lint ≲ 0.1 L⊙). This study was conducted mainly to understand the role played by the magnetic field in the formation of very low and substellar mass range objects. Methods: Light from the stars, while passing through the dust grains that are aligned with their short axis parallel to an external magnetic field, becomes linearly polarised. The polarisation position angles measured for the stars can provide the plane-of-the sky magnetic field orientation. Because the light in the optical wavelength range is most efficiently polarised by the dust grains typically found at the outer layers of the molecular clouds, optical polarimetry mostly traces the magnetic field orientation of the core envelope. Results: The polarisation observations of stars projected on IRAM 04191, L328, L673-7, and L1014 were obtained in the R-band and those of L1521F were obtained in the V-band. The angular offsets between the envelope magnetic field direction (inferred from optical polarisation measurements) and the outflow position angles from the VeLLOs in IRAM 04191, L1521F, L328, L673-7, and L1014 are found to be 84°, 53°, 24°, 08°, and 15°, respectively. The mean value of the offsets for all the five clouds is ~ 37°. If we exclude IRAM 04191, the mean value reduces to become ~ 25°. In IRAM 04191, the offset between the projected envelope and the inner magnetic field (inferred from the submillimetre data obtained using SCUBA-POL) is found to be ~ 68°. The inner magnetic field, however, is found to be nearly aligned with the projected position angles of the minor axis, the rotation axis of the cloud, and the outflow from the IRAM 04191-IRS. We discuss a possible explanation for the nearly perpendicular orientation between the envelope and core scale magnetic fields in IRAM 04191. The angular offset between the envelope magnetic field direction and the minor axis of IRAM 04191, L1521F, L673-7, and L1014 are 82°, 60°, 47°, and 55°, respectively. The mean value of the offsets between the envelope magnetic field and the minor axis position angles for the four cores is found to be ~ 60°. Conclusions: The results obtained from our study on the limited sample of five cores with VeLLOs show that the outflows in three of them tend to nearly align with the envelope magnetic field. Table 4 is available in electronic form at http://www.aanda.org

Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the c-Si\\(100\\)/a-Si:H Heterostructure

NASA Astrophysics Data System (ADS)

Sebastiani, M.; di Gaspare, L.; Capellini, G.; Bittencourt, C.; Evangelisti, F.

1995-10-01

We present a new experimental method for determining band lineups at the semiconductor heterojunctions and apply it to the c-Si100/a-Si:H heterostructure. This method uses a modern version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum due to the high escape depth and the high dynamical range of the technique, thus allowing a direct and precise determination of the band lineup. A value of ΔEV = 0.44+/-0.02 eV was found for the valence band discontinuity.

Thermoelectric band engineering: The role of carrier scattering

NASA Astrophysics Data System (ADS)

Witkoske, Evan; Wang, Xufeng; Lundstrom, Mark; Askarpour, Vahid; Maassen, Jesse

2017-11-01

Complex electronic band structures, with multiple valleys or bands at the same or similar energies, can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the capabilities to realistically assess the benefits and trade-offs associated with these materials. We illustrate the approach using n-type silicon as a model material and show that intervalley scattering is strong. This example shows that the convergence of valleys and bands can improve thermoelectric performance, but the magnitude of the improvement depends sensitively on the relative strengths of intra- and inter-valley electron scattering. Because anisotropy of the band structure also plays an important role, a measure of the benefit of band anisotropy in the presence of strong intervalley scattering is presented.

Fast entrainment of human electroencephalogram to a theta-band photic flicker during successful memory encoding.

PubMed

Sato, Naoyuki

2013-01-01

Theta band power (4-8 Hz) in the scalp electroencephalogram (EEG) is thought to be stronger during memory encoding for subsequently remembered items than for forgotten items. According to simultaneous EEG-functional magnetic resonance imaging (fMRI) measurements, the memory-dependent EEG theta is associated with multiple regions of the brain. This suggests that the multiple regions cooperate with EEG theta synchronization during successful memory encoding. However, a question still remains: What kind of neural dynamic organizes such a memory-dependent global network? In this study, the modulation of the EEG theta entrainment property during successful encoding was hypothesized to lead to EEG theta synchronization among a distributed network. Then, a transient response of EEG theta to a theta-band photic flicker with a short duration was evaluated during memory encoding. In the results, flicker-induced EEG power increased and decreased with a time constant of several hundred milliseconds following the onset and the offset of the flicker, respectively. Importantly, the offset response of EEG power was found to be significantly decreased during successful encoding. Moreover, the offset response of the phase locking index was also found to associate with memory performance. According to computational simulations, the results are interpreted as a smaller time constant (i.e., faster response) of a driven harmonic oscillator rather than a change in the spontaneous oscillatory input. This suggests that the fast response of EEG theta forms a global EEG theta network among memory-related regions during successful encoding, and it contributes to a flexible formation of the network along the time course.

Q-Band (37-41 GHz) Satellite Beacon Architecture for RF Propagation Experiments

NASA Technical Reports Server (NTRS)

Simmons, Rainee N.; Wintucky, Edwin G.

2012-01-01

In this paper, the design of a beacon transmitter that will be flown as a hosted payload on a geostationary satellite to enable propagation experiments at Q-band (37-41 GHz) frequencies is presented. The beacon uses a phased locked loop stabilized dielectric resonator oscillator and a solid-state power amplifier to achieve the desired output power. The satellite beacon antenna is configured as an offset-fed cut-paraboloidal reflector.

Q-Band (37 to 41 GHz) Satellite Beacon Architecture for RF Propagation Experiments

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Wintucky, Edwin G.

2014-01-01

In this paper, the design of a beacon transmitter that will be flown as a hosted payload on a geostationary satellite to enable propagation experiments at Q-band (37 to 41 GHz) frequencies is presented. The beacon uses a phased locked loop stabilized dielectric resonator oscillator and a solid-state power amplifier to achieve the desired output power. The satellite beacon antenna is configured as an offset-fed cutparaboloidal reflector.

Photoemission study of CaF2- and SrF2-GaAs(110) interfaces formed at room temperature

NASA Astrophysics Data System (ADS)

Mao, D.; Young, K.; Kahn, A.; Zanoni, R.; McKinley, J.; Margaritondo, G.

1989-06-01

Interfaces formed by evaporating CaF2 or SrF2 on room-temperature GaAs(110) are studied with synchrotron-radiation photoemission spectroscopy. The fluoride films grow uniformly on the GaAs surface. The deposition of CaF2 and SrF2 induces a large initial band bending on p-type GaAs (~0.9 eV) and a small initial band bending on n-type GaAs (~0.25 eV). The valence band is dominated by the F 2p peak which shifts toward high binding energies by ~1.5 eV after the deposition of >=16 Å fluoride. This shift reflects an increase in the valence-band offset between the two materials as the film forms. The final band offsets are estimated at 7.7 and 8.0 eV for CaF2 and SrF2, respectively, and are in qualitative agreement with those expected from the fluoride-Si data. Core-level measurements indicate that no reaction or decomposition of the MF2 molecule takes place at the interface. The F 2s core-level line shape and the increase in the binding-energy separation of F 2s and Ca 3p with increasing coverage suggest the presence of an interface F component. Contrary to the CaF2/Si case, no measurable Ca-substrate bonding effect is observed. The dissociative effect of uv irradiation on the CaF2 film is also investigated.

Evolution of genuine cross-correlation strength of focal onset seizures.

PubMed

Müller, Markus F; Baier, Gerold; Jiménez, Yurytzy López; Marín García, Arlex O; Rummel, Christian; Schindler, Kaspar

2011-10-01

To quantify the evolution of genuine zero-lag cross-correlations of focal onset seizures, we apply a recently introduced multivariate measure to broad band and to narrow-band EEG data. For frequency components below 12.5 Hz, the strength of genuine cross-correlations decreases significantly during the seizure and the immediate postseizure period, while higher frequency bands show a tendency of elevated cross-correlations during the same period. We conclude that in terms of genuine zero-lag cross-correlations, the electrical brain activity as assessed by scalp electrodes shows a significant spatial fragmentation, which might promote seizure offset.

Ku-band multiple beam antenna

NASA Technical Reports Server (NTRS)

Chen, C. C.; Franklin, C. F.

1980-01-01

The frequency reuse capability is demonstrated for a Ku-band multiple beam antenna which provides contiguous low sidelobe spot beams for point-to-point communications between any two points within the continental United States (CONUS), or regional coverage beams for direct broadcast systems. A spot beam antenna in the 14/21 GHz band which provides contiguous overlapping beams covering CONUS and two discrete beams covering Hawaii and Alaska were designed, developed, and tested. Two reflector antennas are required for providing contiguous coverage of CONUS. Each is comprised of one offset parabolic reflector, one flat polarization diplexer, and two separate planar array feeds. This antenna system provides contiguous spot beam coverage of CONUS, utilizing 15 beams. Also designed, developed and demonstrated was a shaped contoured beam antenna system which provides contiguous four time zone coverage of CONUS from a single offset parabolic reflector incorporating one flat polarization diplexer and two separate planar array feeds. The beams which illuminate the eastern time zone and the mountain time zone are horizontally polarized, while the beams which illuminate the central time zone and the pacific time zone are vertically polarized. Frequency reuse is achieved by amplitude and polarization isolation.

Electronic transitions and band offsets in C60:SubPc and C60:MgPc on MoO3 studied by modulated surface photovoltage spectroscopy

NASA Astrophysics Data System (ADS)

Fengler, S.; Dittrich, Th.; Rusu, M.

2015-07-01

Electronic transitions at interfaces between MoO3 layers and organic layers of C60, SubPc, MgPc, and nano-composite layers of SubPc:C60 and MgPc:C60 have been studied by modulated surface photovoltage (SPV) spectroscopy. For all systems, time dependent and modulated SPV signals pointed to dissociation of excitons at the MoO3/organic layer interfaces with a separation of holes towards MoO3. The highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps (EHL) of C60, SubPc, and MgPc and the effective EHL of SubPc:C60 and MgPc:C60 were measured. The offsets between the LUMO (ΔEL) or HOMO (ΔEH) bands were obtained with high precision and amounted to 0.33 or 0.73 eV for SubPc:C60, respectively, and to -0.33 or 0.67 eV for MgPc:C60, respectively. Exponential tails below EHL and most pronounced sub-bandgap transitions were characterized and ascribed to disorder and transitions from HOMO bands to unoccupied defect states.

Subharmonic response of a single-degree-of-freedom nonlinear vibro-impact system to a narrow-band random excitation.

PubMed

Haiwu, Rong; Wang, Xiangdong; Xu, Wei; Fang, Tong

2009-08-01

The subharmonic response of single-degree-of-freedom nonlinear vibro-impact oscillator with a one-sided barrier to narrow-band random excitation is investigated. The narrow-band random excitation used here is a filtered Gaussian white noise. The analysis is based on a special Zhuravlev transformation, which reduces the system to one without impacts, or velocity jumps, thereby permitting the applications of asymptotic averaging over the "fast" variables. The averaged stochastic equations are solved exactly by the method of moments for the mean-square response amplitude for the case of linear system with zero offset. A perturbation-based moment closure scheme is proposed and the formula of the mean-square amplitude is obtained approximately for the case of linear system with nonzero offset. The perturbation-based moment closure scheme is used once again to obtain the algebra equation of the mean-square amplitude of the response for the case of nonlinear system. The effects of damping, detuning, nonlinear intensity, bandwidth, and magnitudes of random excitations are analyzed. The theoretical analyses are verified by numerical results. Theoretical analyses and numerical simulations show that the peak amplitudes may be strongly reduced at large detunings or large nonlinear intensity.

Light Emission Mechanisms in CuInS 2 Quantum Dots Evaluated by Spectral Electrochemistry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fuhr, Addis S.; Yun, Hyeong Jin; Makarov, Nikolay S.

Luminescent CuInS 2 (CIS) quantum dots (QDs) exhibit highly efficient intragap emission and long, hundreds-of-nanoseconds radiative lifetimes. These spectral properties, distinct from structurally similar II–VI QDs, can be explained by the involvement of intragap defect states containing a localized hole capable of coupling with a conduction band electron for a radiative transition. However, the absolute energies of the intragap and band-edge states, the structure of the emissive defect(s), and the role and origin of nonemissive decay channels still remain poorly understood. Here, we address these questions by applying methods of spectral electrochemistry. Cyclic voltammetry measurements reveal a well-defined intragap statemore » whose redox potential is close to that of the Cu x defect state (where x = 1+ or 2+). The energy offset of this state from the valence band accounts well for the apparent photoluminescence Stokes shift observed in optical spectra. These results provide direct evidence that Cu-related defects serve as emission centers responsible for strong intragap emission from CIS QDs. We then use in situ spectroelectrochemistry to reveal two distinct emission pathways based on the differing oxidation states of Cu defects, which can be controlled by altering QD stoichiometry (1+ for stoichiometric QDs and 2+ for Cu-deficient QDs).« less

Light Emission Mechanisms in CuInS 2 Quantum Dots Evaluated by Spectral Electrochemistry

DOE PAGES

Fuhr, Addis S.; Yun, Hyeong Jin; Makarov, Nikolay S.; ...

2017-09-07

Luminescent CuInS 2 (CIS) quantum dots (QDs) exhibit highly efficient intragap emission and long, hundreds-of-nanoseconds radiative lifetimes. These spectral properties, distinct from structurally similar II–VI QDs, can be explained by the involvement of intragap defect states containing a localized hole capable of coupling with a conduction band electron for a radiative transition. However, the absolute energies of the intragap and band-edge states, the structure of the emissive defect(s), and the role and origin of nonemissive decay channels still remain poorly understood. Here, we address these questions by applying methods of spectral electrochemistry. Cyclic voltammetry measurements reveal a well-defined intragap statemore » whose redox potential is close to that of the Cu x defect state (where x = 1+ or 2+). The energy offset of this state from the valence band accounts well for the apparent photoluminescence Stokes shift observed in optical spectra. These results provide direct evidence that Cu-related defects serve as emission centers responsible for strong intragap emission from CIS QDs. We then use in situ spectroelectrochemistry to reveal two distinct emission pathways based on the differing oxidation states of Cu defects, which can be controlled by altering QD stoichiometry (1+ for stoichiometric QDs and 2+ for Cu-deficient QDs).« less

Investigation of several aspects of LANDSAT 4/5 data quality. [California, Texas, Arkansas, Alabama, and Pacific Ocean

NASA Technical Reports Server (NTRS)

Wrigley, R. C. (Principal Investigator)

1984-01-01

A second quadrant from the Sacramento, CA scene 44/33 acquired by LANDSAT-4 was tested for band to band resolution. Results show that all measured misregistrations are within 0.03 pixels for similar band pairs. Two LANDSAT-5 scenes (one from Corpus Christi, TX and the other from Huntsville, AL) were also tested for band to band resolution. All measured misregistrations in the Texas scene are less than 0.03 pixels. The across scan misregistration Alabama scene is -0.66 pixels and thus needs correction. A 512 x 512 pixel area of the Pacific Ocean was corrected for the pixel offsets. Modulation transfer function analysis of the San Mateo Bridge using data from the San Francisco scene was accomplished.

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

PubMed Central

Hoang, Anh Minh; Dehzangi, Arash; Adhikary, Sourav; Razeghi, Manijeh

2016-01-01

We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to a successful separation of operation regimes; we demonstrate experimentally three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. Such all-in-one devices also provide the versatility of working as single or dual-band photodetectors at high operating temperature. With this design, by retaining the simplicity in device fabrication, this demonstration opens the prospect for three-color infrared imaging. PMID:27051979

Structural and optical properties of the ZnS/GaSe heterojunctions

NASA Astrophysics Data System (ADS)

Alharbi, S. R.; Abdallaha, Maisam M. A.; Qasrawi, A. F.

2017-11-01

In the current work, the ZnS/GaSe thin film heterojunction interfaces are experimentally designed and characterized by means of x-ray diffraction, scanning electron microscopy, energy dispersion spectroscopy and optical spectroscopy techniques. The heterojunction is observed to exhibit physical nature of formation with an induced crystallization of GaSe by the ZnS substrate. For this heterojunction, the hot probe technique suggested the formation of a p-ZnS/n-GaSe interface. In addition, the designed energy band diagram of the heterojunction which was actualized with the help of the optical spectrophotometric data analysis revealed a respective conduction and valence band offsets of 0.67 and 0.73 eV. On the other hand, the dielectric dispersion analysis and modeling which was studied in the frequency range of 270-1000 THz, have shown that the interfacing of the ZnS with GaSe strongly affects the properties of ZnS as it reduces the number of free carriers, shifts down the plasmon frequency, increases the charge carrier scattering time and results in higher values of drift mobility at Terahertz frequencies.

Characterization of a n+3C/n−4H SiC heterojunction diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minamisawa, R. A.; Mihaila, A.; Farkas, I.

We report on the fabrication of n + 3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to ∼7 × 10{sup 17 }cm{sup −3} dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extractedmore » from CV measurement. We finally compare the electrical results of the n + 3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.« less

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

PubMed

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

PubMed Central

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A.; Anthopoulos, Thomas D.

2017-01-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications. PMID:28435867

A Study of an Effective Offsets Model for Korea

DTIC Science & Technology

2013-12-01

offsets since 1983 to develop a defense industry and to improve its defense science technology. Since the establishment of the Korean Defense...conducts research and suggests a new Korean offsets model to improve Korea’s defense science technology and promote Korea’s defense industry . By...offsets since 1983 to develop a defense industry and to improve its defense science technology. Since the establishment of the Korean Defense Acquisition

An intercomparison of the thermal offset for different pyranometers

NASA Astrophysics Data System (ADS)

Sanchez, G.; Cancillo, M. L.; Serrano, A.

2016-07-01

An unprecedented intensive intercomparison campaign focused on the experimental measurement of the thermal offset of pyranometers has been conducted at Badajoz (Spain) with the participation of three main manufacturers. The purpose of this study is to compare the thermal offset of six commercially available pyranometers, being some of them widely used and others recently commercialized. In this campaign, the capping methodology has been used to experimentally measure the daytime thermal offset of the pyranometers. Thus, a short but intense campaign has been conducted in two selected summer days under clear-sky conditions, covering a large range of solar zenith angle, irradiance, and temperature. Along the campaign, a total of 305 capping events have been performed, 61 for each pyranometer. The daytime thermal offset obtained for different pyranometers ranges between 0 and -16.8 W/m2 depending on the environmental conditions, being sometimes notably higher than values estimated indoors by manufacturers. The thermal offset absolute value of all instruments shows a diurnal cycle, increasing from sunrise to central hours of the day and decreasing from midafternoon to sunset. The analysis demonstrates that thermal offset is notably higher and more variable during daytime than during nighttime, requiring specific daytime measurements. Main results emphasize the key role played by wind speed in modulating the thermal offset.

Gender-related differences in the apparent timing of skeletal density bands in the reef-building coral Siderastrea siderea

NASA Astrophysics Data System (ADS)

Carricart-Ganivet, J. P.; Vásquez-Bedoya, L. F.; Cabanillas-Terán, N.; Blanchon, P.

2013-09-01

Density banding in skeletons of reef-building corals is a valuable source of proxy environmental data. However, skeletal growth strategy has a significant impact on the apparent timing of density-band formation. Some corals employ a strategy where the tissue occupies previously formed skeleton during as the new band forms, which leads to differences between the actual and apparent band timing. To investigate this effect, we collected cores from female and male colonies of Siderastrea siderea and report tissue thicknesses and density-related growth parameters over a 17-yr interval. Correlating these results with monthly sea surface temperature (SST) shows that maximum skeletal density in the female coincides with low winter SSTs, whereas in the male, it coincides with high summer SSTs. Furthermore, maximum skeletal densities in the female coincide with peak Sr/Ca values, whereas in the male, they coincide with low Sr/Ca values. Both results indicate a 6-month difference in the apparent timing of density-band formation between genders. Examination of skeletal extension rates also show that the male has thicker tissue and extends faster, whereas the female has thinner tissue and a denser skeleton—but both calcify at the same rate. The correlation between extension and calcification, combined with the fact that density banding arises from thickening of the skeleton throughout the depth reached by the tissue layer, implies that S. siderea has the same growth strategy as massive Porites, investing its calcification resources into linear extension. In addition, differences in tissue thicknesses suggest that females offset the greater energy requirements of gamete production by generating less tissue, resulting in differences in the apparent timing of density-band formation. Such gender-related offsets may be common in other corals and require that environmental reconstructions be made from sexed colonies and that, in fossil corals where sex cannot be determined, reconstructions must be duplicated in different colonies.

29 CFR 100.614 - Collection by administrative offset.

Code of Federal Regulations, 2010 CFR

2010-07-01

... conducted more than 10 years after the Government's right to collect the claim or debt first accrued. (b) Mandatory centralized offset. (1) The NLRB is required to refer past due legally enforceable, nontax debts... centralized administrative offset is not available or appropriate to collect past due legally enforceable...

Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Pei-Yu; Posadas, Agham B.; Kwon, Sunah; Wang, Qingxiao; Kim, Moon J.; Demkov, Alexander A.; Ekerdt, John G.

2017-12-01

Growth of crystalline Er2O3, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH4OH solutions and an in situ N2 plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry of 1.02. Using atomic layer deposition with erbium tris(isopropylcyclopentadienyl) [Er(iPrCp)3] and water, crystalline cubic Er2O3 (C-Er2O3) is grown on GaN at 250 °C. The orientation relationships between the C-Er2O3 film and the GaN substrate are C-Er2O3(222) ǁ GaN(0001), C-Er2O3⟨-440⟩ ǁ GaN ⟨11-20⟩, and C-Er2O3⟨-211⟩ ǁ GaN ⟨1-100⟩. Scanning transmission electron microscopy and electron energy loss spectroscopy are used to examine the microstructure of C-Er2O3 and its interface with GaN. With post-deposition annealing at 600 °C, a thicker interfacial layer is observed, and two transition layers, crystalline GaNwOz and crystalline GaErxOy, are found between GaN and C-Er2O3. The tensile strain in the C-Er2O3 film is studied with x-ray diffraction by changes in both out-of-plane and in-plane d-spacing. Fully relaxed C-Er2O3 films on GaN are obtained when the film thickness is around 13 nm. Additionally, a valence band offset of 0.7 eV and a conduction band offset of 1.2 eV are obtained using x-ray photoelectron spectroscopy.

Glacier surface velocity estimation in the West Kunlun Mountain range from L-band ALOS/PALSAR images using modified synthetic aperture radar offset-tracking procedure

NASA Astrophysics Data System (ADS)

Ruan, Zhixing; Guo, Huadong; Liu, Guang; Yan, Shiyong

2014-01-01

Glacier movement is closely related to changes in climatic, hydrological, and geological factors. However, detecting glacier surface flow velocity with conventional ground surveys is challenging. Remote sensing techniques, especially synthetic aperture radar (SAR), provide regular observations covering larger-scale glacier regions. Glacier surface flow velocity in the West Kunlun Mountains using modified offset-tracking techniques based on ALOS/PALSAR images is estimated. Three maps of glacier flow velocity for the period 2007 to 2010 are derived from procedures of offset detection using cross correlation in the Fourier domain and global offset elimination of thin plate smooth splines. Our results indicate that, on average, winter glacier motion on the North Slope is 1 cm/day faster than on the South Slope-a result which corresponds well with the local topography. The performance of our method as regards the reliability of extracted displacements and the robustness of this algorithm are discussed. The SAR-based offset tracking is proven to be reliable and robust, making it possible to investigate comprehensive glacier movement and its response mechanism to environmental change.

Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Qian, Ling-Xuan; Wu, Ze-Han; Zhang, Yi-Yu; Liu, Yuan; Song, Jia-Qi; Liu, Xing-Zhao; Li, Yan-Rong

2017-04-01

Amorphous InGaZnO4 thin film transistors (a-IGZO TFTs) with HfLaO gate dielectrics have been widely demonstrated to possess extremely excellent electrical characteristics, and thus show great potential for applications in various next-generation electronic products. Nevertheless, the in-depth understanding of HfLaO/IGZO interfacial features is still lacking, which makes further device optimization lack clear guidance. In this work, the band alignment and interfacial chemical structure of a sputtering-prepared HfLaO/IGZO heterojunction was investigated through x-ray photoelectron spectroscopy. The valence and conduction band offsets (ΔE v and ΔE c) at the interface were determined to be 0.57 eV and 1.48 eV, respectively. The relatively large ΔE v is mainly attributed to the formation of the interfacial layer (IL) and thus the upward band bending from IGZO to the surface of HfLaO. Furthermore, it was found that the oxygen vacancies on the surface of IGZO were significantly suppressed upon the deposition of HfLaO, which not only explained the previously reported ultrahigh performance of a-IGZO/HfLaO TFTs to some extent, but also additionally validated the formation of the IL. Our findings have successfully revealed the importance of ILs in modifying the band alignment and interfacial trap states of HfLaO/IGZO heterojunctions, thus suggesting a potential route to further optimizing a-IGZO/HfLaO TFTs so as to satisfy the requirements of next-generation technologies.

Influence of Bi-related impurity states on the bandgap and spin-orbit splitting energy of dilute III-V-Bi alloys: InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix

NASA Astrophysics Data System (ADS)

Samajdar, D. P.; Dhar, S.

2016-01-01

Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band structure of Bi containing alloys such as InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix due to the incorporation of dilute concentrations of bismuth. The coupling parameter CBi which gives the magnitude of interaction of Bi impurity states with the LH, HH and SO sub bands in VBAC depends on the increase in the HH/LH related energy level EHH/LH+, location of the Bi related impurity level EBi and valence band offset ΔEVBM between the endpoint compounds in the corresponding III-V-Bi. The reduction in band gap as well as the enhancement of the spin-orbit splitting energy is well explained using this model and the calculated results are compared with the results of Virtual Crystal Approximation (VCA) and Density Functional Theory (DFT) calculations, as well as with the available experimental data and are found to have good agreement. The incorporation of Bi mainly perturbs the valence band due to the interaction of the Bi impurity states with the HH, LH and SO bands. The lowering of the conduction band minimum (CBM) due to VCA is added with the upward movement of the HH/LH bands to get the total reduction in band gap for the bismides. The valence band shifts of 31.9, 32.5, 20.8 and 12.4 meV/at%Bi for InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix respectively constitute 65, 76, 59 and 31% of the total band gap reduction and the rest is the contribution of the conduction band shift. The spin-orbit splitting energy also shows significant increase with the maximum change in InPBi and the minimum in InSbBi. The same is true for Ga containing bismides if we make a comparison with the available values for GaAsBi and GaPBi with that of GaSbBi. It has also been observed that the increase in splitting energy is greater in case of the bismides such as InAsBi, InPBi and GaAsBi than the bismides such as InSbBi and GaSbBi with the parent substrates having higher values of splitting energy. This may be due to the proximity of the Bi related impurity level EBi with the SO bands of InAs, InP and GaAs.

Built-In Potential in Fe 2 O 3 -Cr 2 O 3 Superlattices for Improved Photoexcited Carrier Separation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Schreiber, Daniel K.; Spurgeon, Steven R.

2015-12-17

We demonstrate that the different surface terminations exhibited by α-Fe2O3 (hematite) and α-Cr2O3 (eskolaite) in superlattices (SL) of these materials, synthesized with exquisite control by molecular beam epitaxy, determine the heterojunction interface structure and result in controllable, non-commutative band offset values. Precise atomic control of the interface structure allowed us to vary the valence band offset from 0.35 eV to 0.79 eV. This controllable band alignment can be harnessed to generate a built-in potential in Fe2O3-Cr2O3 SLs. For instance, in a 2.5-period SL, a built-in potential of 0.8 eV was realized as measured by x-ray photoelectron spectroscopy of Ti dopantsmore » as probe species. The high quality of the SL structure was confirmed by atom probe tomography and scanning transmission electron microscopy. Enhanced photocurrents were measured for a thick Fe2O3 epitaxial film capped with an (Fe2O3)3-(Cr2O3)3 SL; this enhancement was attributed to efficient electron-hole separation in the SL as a result of the band alignment. The Fe-O-Cr bonds at the SL interfaces also red-shifted the onset of photoconductivity to ~1.6 eV. Exploiting the band alignment and photoabsorption properties of Fe2O3-Cr2O3 SLs has the potential to increase the efficiency of hematite-based photoelectrochemical water splitting.« less

Electron microscopy investigations of purity of AlN interlayer in Al{sub x}Ga{sub 1-x}N/GaN heterostructures grown by plasma assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sridhara Rao, D. V.; Jain, Anubha; Lamba, Sushil

2013-05-13

The electron microscopy was used to characterize the AlN interlayer in Al{sub x}Ga{sub 1-x}N/AlN/GaN heterostructures grown by plasma assisted molecular beam epitaxy (PAMBE). We show that the AlN interlayer grown by PAMBE is without gallium and oxygen incorporation and the interfaces are coherent. The AlN interlayer has the ABAB stacking of lattice planes as expected for the wurtzite phase. High purity of AlN interlayer with the ABAB stacking leads to larger conduction band offset along with stronger polarization effects. Our studies show that the origin of lower sheet resistance obtained by PAMBE is the purity of AlN interlayer.

Near-Infrared Laser Pumped Intersubband THz Laser Gain in InGaAs-AlAsSb-InP Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, An-Sheng; Ning, Cun-Zheng

1999-01-01

We investigate the possibility of using InGaAs-AlAsSb-InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 micron as pump sources. Taking into account the pump-probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump-probe coherent interactions.

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

NASA Astrophysics Data System (ADS)

Li, Jeng-Ting; Tsai, Ho-Lin; Lai, Wei-Yao; Hwang, Weng-Sing; Chen, In-Gann; Chen, Jen-Sue

2018-04-01

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded Al xGa 1- xAs layer at emitter/base heterojunction

NASA Astrophysics Data System (ADS)

Cheng, Shiou-Ying

2004-07-01

An InGaP/GaAs heterojunction bipolar transistor (HBT) with a continuous conduction-band structure is demonstrated and theoretically investigated. This device exhibited good performance including lower turn-on voltage, lower offset voltage and smaller collector current saturation voltage. The novel aspect of device structure design is the adoption of the compositionally linear-graded AlGaAs layer between the InGaP-emitter and GaAs-base layers. Therefore, the device studied shows better dc and ac performances than a conventional device. Consequently, this causes the substantial benefit for practical analog and digital applications especially for lower operation voltage, lower power consumption commercial and military products.

Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2

NASA Astrophysics Data System (ADS)

Wang, Yulong; Wen, Junfu; Fan, Zhenghua; Bao, Ningzhong; Huang, Rong; Tu, Rong; Wang, Yifeng

2015-04-01

We report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS2 bulk ceramic, about 1 mW/(mK2) at 300 K and 1.23 mW/(mK2) in a wide temperature range of 573 ˜ 673 K, of which the latter is among the highest so far for TiS2-based thermoelectric materials. Compared to TiS2, the power factor is increased by ˜110% at 300 K and (50 ˜ 35)% at 573 ˜ 673 K. This enhancement is derived from a large increase in Seebeck coefficient which overwhelmed the modest degradation of electrical conductivity, which should be attributed to energy filtering induced by the band gap offset between TiS2 and PbS.

InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current

NASA Astrophysics Data System (ADS)

Peng, Yue; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Liu, Yan; Wang, Yibo; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue

2016-05-01

InN/In0.75Ga0.25N complementary heterojunction-enhanced tunneling field-effect transistors (HE-TFETs) were characterized using the numerical simulation. InN/In0.75Ga0.25N HE-TFET has an InN/In0.75Ga0.25N heterojunction located in the channel region with a distance of LT-H from the source/channel tunneling junction. We demonstrate that, for both n- and p-channel devices, HE-TFETs have a delay of onset voltage VONSET, a steeper subthreshold swing (SS), and an enhanced on-state current ION in comparison with the homo-TFETs. InN/In0.75Ga0.25N n- and p-channel HE-TFETs with a gate length LG of 25 nm and a LT-H of 5 nm achieve a 7 and 9 times ION improvement in comparison with the homo devices, respectively, at a supply voltage of 0.3 V. The performance enhancement in HE-TFETs is attributed to the modulating effect of heterojunction on band-to-band tunneling (BTBT). Because InN/In0.75Ga0.25N heterointerface shows the similar band offsets at conduction and valence bands, the InN/In0.75Ga0.25N heterojunction exhibits the improved effect on BTBT for both n- and p-channel devices. This makes InN/In0.75Ga0.25N heterojunction a promising structure for high performance complementary TFETs.

41 CFR 105-55.011 - Collection by administrative offset.

Code of Federal Regulations, 2010 CFR

2010-07-01

....C. 3716 to collect a debt may not be conducted more than 10 years after the General Services.... (b) Mandatory centralized administrative offset. (1) GSA is required to refer past due, legally... debtor/payee in writing that an offset has occurred to satisfy, in part or in full, a past due, legally...

Type I band alignment in GaAs{sub 81}Sb{sub 19}/GaAs core-shell nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, T.; Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072; Wei, M. J.

2015-09-14

The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs{sub 81}Sb{sub 19}/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs{sub 81}Sb{sub 19} intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs{sub 81}Sb{sub 19}more » core and the GaAs shell and identifies it as a type I band alignment.« less

InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

NASA Astrophysics Data System (ADS)

Jin, Shirong; John Sweeney, Stephen

2013-12-01

We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.3-0.8 eV (1.5-4 μm) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (ΔSO) is large and controllable and can, for example, be made larger than the band gap (Eg) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices.

Deep CFHT Y-band Imaging of VVDS-F22 Field. I. Data Products and Photometric Redshifts

NASA Astrophysics Data System (ADS)

Liu, Dezi; Yang, Jinyi; Yuan, Shuo; Wu, Xue-Bing; Fan, Zuhui; Shan, Huanyuan; Yan, Haojing; Zheng, Xianzhong

2017-02-01

We present our deep Y-band imaging data of a 2 square degree field within the F22 region of the VIMOS VLT Deep Survey. The observations were conducted using the WIRCam instrument mounted at the Canada-France-Hawaii Telescope (CFHT). The total on-sky time was 9 hr, distributed uniformly over 18 tiles. The scientific goals of the project are to select faint quasar candidates at redshift z> 2.2 and constrain the photometric redshifts for quasars and galaxies. In this paper, we present the observation and the image reduction, as well as the photometric redshifts that we derived by combining our Y-band data with the CFHTLenS {u}* g\\prime r\\prime I\\prime z\\prime optical data and UKIDSS DXS JHK near-infrared data. With the J-band image as a reference, a total of ˜80,000 galaxies are detected in the final mosaic down to a Y-band 5σ point-source limiting depth of 22.86 mag. Compared with the ˜3500 spectroscopic redshifts, our photometric redshifts for galaxies with z< 1.5 and I\\prime ≲ 24.0 mag have a small systematic offset of | {{Δ }}z| ≲ 0.2, 1σ scatter 0.03< {σ }{{Δ }z}< 0.06, and less than 4.0% of catastrophic failures. We also compare with the CFHTLenS photometric redshifts and find that ours are more reliable at z≳ 0.6 because of the inclusion of the near-infrared bands. In particular, including the Y-band data can improve the accuracy at z˜ 1.0{--}2.0 because the location of the 4000 Å break is better constrained. The Y-band images, the multiband photometry catalog, and the photometric redshifts are released at http://astro.pku.edu.cn/astro/data/DYI.html.

The Telecommunications and Data Acquisition Report

NASA Technical Reports Server (NTRS)

Posner, E. C. (Editor)

1987-01-01

Developments in programs managed by the Jet Propulsion Laboratory's Office of Telecommunications and Data Acquisition are discussed. Topics discussed include sorption compression/mechanical expanded hybrid refrigeration, calculated 70-meter antenna performance for offset L-band, systolic arrays and stack decoding, and calibrations of Deep Space Network antennas.

Mechanically scanned deployable antenna study

NASA Technical Reports Server (NTRS)

1983-01-01

The conceptual design of a Mechanically Scanned Deployable Antenna which is launched by the STS (Space Shuttle) to provide radiometric brightness temperature maps of the Earth and oceans at selected frequency bands in the frequency range of 1.4 GHz to 11 GHz is presented. Unlike previous scanning radiometric systems, multiple radiometers for each frequency are required in order to fill in the resolution cells across the swath created by the 15 meter diameter spin stabilized system. This multiple beam radiometric system is sometimes designated as a ""whiskbroom'' system in that it combines the techniques of the scanning and ""pushbroom'' type systems. The definition of the feed system including possible feed elements and location, determination of the fundamental reflector feed offset geometry including offset angles and f/D ratio, preliminary estimates of the beam efficiency of the feed reflector system, a summary of reflector mesh losses at the proposed radiometric frequency bands, an overall conceptual configuration design and preliminary structural and thermal analyses are included.

Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs{sub 1-y}Sb{sub y} metamorphic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Y.; Clavel, M.; Goley, P.

Mixed-anion, GaAs{sub 1-y}Sb{sub y} metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs{sub 1-y}Sb{sub y} materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs{sub 1-y}Sb{sub y}. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sbmore » compositions in the GaAs{sub 1-y}Sb{sub y} structures. Selected high-κ dielectric materials, Al{sub 2}O{sub 3}, HfO{sub 2}, and Ta{sub 2}O{sub 5} were deposited using atomic layer deposition on the GaAs{sub 0.38}Sb{sub 0.62} material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of >2 eV for all three dielectric materials on GaAs{sub 0.38}Sb{sub 0.62}, indicating the potential of utilizing these dielectrics on GaAs{sub 0.38}Sb{sub 0.62} for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al{sub 2}O{sub 3} and HfO{sub 2} showed a conduction band offset of >2 eV on GaAs{sub 0.38}Sb{sub 0.62}, suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs{sub 1-y}Sb{sub y} material systems and the detailed band alignment analysis of multiple high-κ dielectric materials on a fixed Sb composition, GaAs{sub 0.38}Sb{sub 0.62}, provides a pathway to utilize GaAs{sub 1-y}Sb{sub y} materials in future microelectronic and optoelectronic applications.« less

SEMICONDUCTOR DEVICES: A Ga-doped ZnO transparent conduct layer for GaN-based LEDs

NASA Astrophysics Data System (ADS)

Zhen, Liu; Xiaofeng, Wang; Hua, Yang; Yao, Duan; Yiping, Zeng

2010-09-01

An 8 μm thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2:24 ± 0:21 eV) resulting from the formation of Ga2O3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage.

A non-viscous-featured fractograph in metallic glasses

NASA Astrophysics Data System (ADS)

Yang, G. N.; Shao, Y.; Yao, K. F.

2016-02-01

A fractograph of non-viscous feature but pure shear-offsets was found in three-point bending samples of a ductile Pd-Cu-Si metallic glass. A sustainable shear band multiplication with large plasticity during notch propagation was observed. Such non-viscous-featured fractograph was formed by a crack propagation manner of continual multiple shear bands formation in front of the crack-tip, instead of the conventional rapid fracture along shear bands. With a 2D model of crack propagation by multiple shear bands, we showed that such fracture process was achieved by a faster stress relaxation than shear-softening effect in the sample. This study confirmed that the viscous fracture along shear bands could be not a necessary process in ductile metallic glasses fracture, and could provide new ways to understand the plasticity in the shear-softened metallic glasses.

Jump-and-return sandwiches: A new family of binomial-like selective inversion sequences with improved performance

NASA Astrophysics Data System (ADS)

Brenner, Tom; Chen, Johnny; Stait-Gardner, Tim; Zheng, Gang; Matsukawa, Shingo; Price, William S.

2018-03-01

A new family of binomial-like inversion sequences, named jump-and-return sandwiches (JRS), has been developed by inserting a binomial-like sequence into a standard jump-and-return sequence, discovered through use of a stochastic Genetic Algorithm optimisation. Compared to currently used binomial-like inversion sequences (e.g., 3-9-19 and W5), the new sequences afford wider inversion bands and narrower non-inversion bands with an equal number of pulses. As an example, two jump-and-return sandwich 10-pulse sequences achieved 95% inversion at offsets corresponding to 9.4% and 10.3% of the non-inversion band spacing, compared to 14.7% for the binomial-like W5 inversion sequence, i.e., they afforded non-inversion bands about two thirds the width of the W5 non-inversion band.

The Architecture of the LkCa 15 Transitional Disk Revealed by High-contrast Imaging

NASA Technical Reports Server (NTRS)

Thalmann, C.; Mulders, G. D.; Hodapp, K.; Janson, M.; Grady, C. A.; Min, M.; deJuanOvelar, M.; Carson, J.; Brandt, T.; Bonnefoy, M.;

The Architecture of the LkCa 15 Transitional Disk Revealed By High-Contrast Imaging

NASA Technical Reports Server (NTRS)

Thalmann, C.; Mulders, G. D.; Hodapp, K.; Janson, M.; Grady, C.A.; Min, M.; de Juan Ovelar, M.; Carson, J.; Brandt, T.; Bonnefoy, M.;

Clock synchronization experiments performed via the ATS-1 and ATS-3 satellites.

NASA Technical Reports Server (NTRS)

Ramasastry, J.; Rosenbaum, B.; Michelini, R. D.; Kuegler, G. K.

1973-01-01

Clock synchronization experiments were carried out May 10 to June 10, 1971, via the ATS-1 and ATS-3 geostationary satellites between the NASA tracking stations at Rosman, N.C., and Mojave, Calif., in order to determine the offset and the relative drift rate between the two station clocks. Pulses at C band with very sharp risetime and of 10 microsec duration were exchanged by the two stations through the dual transponders of the satellites. At each station, a time-interval counter was started by the transmitted pulse and stopped by the pulse received via satellite from the other station. The probable error of the clock offset as measured by the counter is 10 msec. A very long baseline interferometer experiment was also performed between the two stations at the same time and provided independent clock-offset data to check the accuracy of the time-synchronization experiment.

Band engineering in core/shell ZnTe/CdSe for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells.

PubMed

Jiao, Shuang; Shen, Qing; Mora-Seró, Iván; Wang, Jin; Pan, Zhenxiao; Zhao, Ke; Kuga, Yuki; Zhong, Xinhua; Bisquert, Juan

2015-01-27

Even though previously reported CdTe/CdSe type-II core/shell QD sensitizers possess intrinsic superior optoelectronic properties (such as wide absorption range, fast charge separation, and slow charge recombination) in serving as light absorbers, the efficiency of the resultant solar cell is still limited by the relatively low photovoltage. To further enhance photovoltage and cell efficiency accordingly, ZnTe/CdSe type-II core/shell QDs with much larger conduction band (CB) offset in comparison with that of CdTe/CdSe (1.22 eV vs 0.27 eV) are adopted as sensitizers in the construction of quantum dot sensitized solar cells (QDSCs). The augment of band offset produces an increase of the charge accumulation across the QD/TiO2 interface under illumination and induces stronger dipole effects, therefore bringing forward an upward shift of the TiO2 CB edge after sensitization and resulting in enhancement of the photovoltage of the resultant cell devices. The variation of relative chemical capacitance, Cμ, between ZnTe/CdSe and reference CdTe/CdSe cells extracted from impedance spectroscopy (IS) characterization under dark and illumination conditions clearly demonstrates that, under light irradiation conditions, the sensitization of ZnTe/CdSe QDs upshifts the CB edge of TiO2 by the level of ∼ 50 mV related to that in the reference cell and results in the enhancement of V(oc) of the corresponding cell devices. In addition, charge extraction measurements have also confirmed the photovoltage enhancement in the ZnTe/CdSe cell related to reference CdTe/CdSe cell. Furthermore, transient grating (TG) measurements have revealed a faster electron injection rate for the ZnTe/CdSe-based QDSCs in comparison with the CdSe cells. The resultant ZnTe/CdSe QD-based QDSCs exhibit a champion power conversion efficiency of 7.17% and a certified efficiency of 6.82% under AM 1.5 G full one sun illumination, which is, as far as we know, one of the highest efficiencies for liquid-junction QDSCs.

A graphical method to evaluate spectral preprocessing in multivariate regression calibrations: example with Savitzky-Golay filters and partial least squares regression

USDA-ARS?s Scientific Manuscript database

In multivariate regression analysis of spectroscopy data, spectral preprocessing is often performed to reduce unwanted background information (offsets, sloped baselines) or accentuate absorption features in intrinsically overlapping bands. These procedures, also known as pretreatments, are commonly ...

47 CFR 76.612 - Cable television frequency separation standards.

Code of Federal Regulations, 2010 CFR

2010-10-01

... frequency separation standards. All cable television systems which operate in the frequency bands 108-137... kHz bandwidth in any 160 microsecond period must operate at frequencies offset from certain frequencies which may be used by aeronautical radio services operated by Commission licensees or by the United...

Lateralization of Frequency-Specific Networks for Covert Spatial Attention to Auditory Stimuli

PubMed Central

Thorpe, Samuel; D'Zmura, Michael

2011-01-01

We conducted a cued spatial attention experiment to investigate the time–frequency structure of human EEG induced by attentional orientation of an observer in external auditory space. Seven subjects participated in a task in which attention was cued to one of two spatial locations at left and right. Subjects were instructed to report the speech stimulus at the cued location and to ignore a simultaneous speech stream originating from the uncued location. EEG was recorded from the onset of the directional cue through the offset of the inter-stimulus interval (ISI), during which attention was directed toward the cued location. Using a wavelet spectrum, each frequency band was then normalized by the mean level of power observed in the early part of the cue interval to obtain a measure of induced power related to the deployment of attention. Topographies of band specific induced power during the cue and inter-stimulus intervals showed peaks over symmetric bilateral scalp areas. We used a bootstrap analysis of a lateralization measure defined for symmetric groups of channels in each band to identify specific lateralization events throughout the ISI. Our results suggest that the deployment and maintenance of spatially oriented attention throughout a period of 1,100 ms is marked by distinct episodes of reliable hemispheric lateralization ipsilateral to the direction in which attention is oriented. An early theta lateralization was evident over posterior parietal electrodes and was sustained throughout the ISI. In the alpha and mu bands punctuated episodes of parietal power lateralization were observed roughly 500 ms after attentional deployment, consistent with previous studies of visual attention. In the beta band these episodes show similar patterns of lateralization over frontal motor areas. These results indicate that spatial attention involves similar mechanisms in the auditory and visual modalities. PMID:21630112

Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices

NASA Astrophysics Data System (ADS)

Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

2018-02-01

In the current work, a tunneling barrier device made of 20 nm thick Sb2Te3 layer deposited onto 500 nm thick CdS is designed and characterized. The design included a Yb metallic substrate and Ag point contact of area of 10-3 cm2. The heterojunction properties are investigated by means of x-ray diffraction and impedance spectroscopy techniques. It is observed that the coating of the Sb2Te3 onto the surface of CdS causes a further deformation to the already strained structure of hexagonal CdS. The designed energy band diagram for the CdS/Sb2Te3 suggests a straddling type of heterojunction with an estimated conduction and valence band offsets of 0.35 and 1.74 eV, respectively. In addition, the analysis of the capacitance-voltage characteristic curve revealed a depletion region width of 14 nm. On the other hand, the capacitance and conductivity spectra which are analyzed in the frequency domain of 0.001-1.80 GHz indicated that the conduction in the device is dominated by the quantum mechanical tunneling in the region below 0.26 GHz and by the correlated barrier hopping in the remaining region. While the modeling of the conductivity spectra allowed investigation of the density of states near Fermi levels and an average scattering time of 1.0 ns, the capacitance spectra exhibited resonance at 0.26 GHz followed by negative differential capacitance effect in the frequency domain of 0.26-1.8 GHz. Furthermore, the evaluation of the impedance and reflection coefficient spectra indicated the usability of these devices as wide range low pass filters with ideal values of voltage standing wave ratios.

Performance of mid-wave T2SL detectors with heterojunction barriers

NASA Astrophysics Data System (ADS)

Asplund, Carl; Marcks von Würtemberg, Rickard; Lantz, Dan; Malm, Hedda; Martijn, Henk; Plis, Elena; Gautam, Nutan; Krishna, Sanjay

2013-07-01

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10-6 A/cm2 at -0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p-i-n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.

Dual-band beacon experiment over Southeast Asia for ionospheric irregularity analysis

NASA Astrophysics Data System (ADS)

Watthanasangmechai, K.; Yamamoto, M.; Saito, A.; Saito, S.; Maruyama, T.; Tsugawa, T.; Nishioka, M.

2013-12-01

An experiment of dual-band beacon over Southeast Asia was started in March 2012 in order to capture and analyze ionospheric irregularities in equatorial region. Five GNU Radio Beacon Receivers (GRBRs) were aligned along 100 degree geographic longitude. The distances between the stations reach more than 500 km. The field of view of this observational network covers +/- 20 degree geomagnetic latitude including the geomagnetic equator. To capture ionospheric irregularities, the absolute TEC estimation technique was developed. The two-station method (Leitinger et al., 1975) is generally accepted as a suitable method to estimate TEC offsets of dual-band beacon experiment. However, the distances between the stations directly affect on the robustness of the technique. In Southeast Asia, the observational network is too sparse to attain a benefit of the classic two-station method. Moreover, the least-squares approch used in the two-station method tries too much to adjust the small scales of the TEC distribution which are the local minima. We thus propose a new technique to estimate the TEC offsets with the supporting data from absolute GPS-TEC from local GPS receivers and the ionospheric height from local ionosondes. The key of the proposed technique is to utilize the brute-force technique with weighting function to find the TEC offset set that yields a global minimum of RMSE in whole parameter space. The weight is not necessary when the TEC distribution is smooth, while it significantly improves the TEC estimation during the ESF events. As a result, the latitudinal TEC shows double-hump distribution because of the Equatorial Ionization Anomaly (EIA). In additions, the 100km-scale fluctuations from an Equatorial Spread F (ESF) are captured at night time in equinox seasons. The plausible linkage of the meridional wind with triggering of ESF is under invatigating and will be presented. The proposed method is successful to estimate the latitudinal TEC distribution from dual-band frequency beacon data for the sparse observational network in Southeast Asia which may be useful for other equatorial sectors like Affrican region as well.

Spectral Ratio Imaging with Hyperion Satellite Data for Geological Mapping

NASA Technical Reports Server (NTRS)

Vincent, Robert K.; Beck, Richard A.

2005-01-01

Since the advent of LANDSAT I in 1972, many different multispectral satellites have been orbited by the U.S. and other countries. These satellites have varied from 4 spectral bands in LANDSAT I to 14 spectral bands in the ASTER sensor aboard the TERRA space platform. Hyperion is a relatively new hyperspectral sensor with over 220 spectral bands. The huge increase in the number of spectral bands offers a substantial challenge to computers and analysts alike when it comes to the task of mapping features on the basis of chemical composition, especially if little or no ground truth is available beforehand from the area being mapped. One approach is the theoretical approach of the modeler, where all extraneous information (atmospheric attenuation, sensor electronic gain and offset, etc.) is subtracted off and divided out, and laboratory (or field) spectra of materials are used as training sets to map features in the scene of similar composition. This approach is very difficult to keep accurate because of variations in the atmosphere, solar illumination, and sensor electronic gain and offset that are not always perfectly recorded or accounted for. For instance, to apply laboratory or field spectra of materials as data sets from the theoretical approach, the header information of the files must reflect the correct, up-to-date sensor electronic gain and offset and the analyst must pick the exact atmospheric model that is appropriate for the day of data collection in order for classification procedures to accurately match pixels in the scene with the laboratory or field spectrum of a desired target on the basis of the hyperspectral data. The modeling process is so complex that it is difficult to tell when it is operating well or determine how to fix it when it is incorrect. Recently RSI has announced that the latest version of their ENVI software package is not performing atmospheric corrections correctly with the FLAASH atmospheric model. It took a long time to determine that it was wrong, and may take an equally long time (or longer) to fix.

Self-consistent vertical transport calculations in AlxGa1-xN/GaN based resonant tunneling diode

NASA Astrophysics Data System (ADS)

Rached, A.; Bhouri, A.; Sakr, S.; Lazzari, J.-L.; Belmabrouk, H.

2016-03-01

The formation of two-dimensional electron gases (2DEGs) at AlxGa1-xN/GaN hexagonal double-barriers (DB) resonant tunneling diodes (RTD) is investigated by numerical self-consistent (SC) solutions of the coupled Schrödinger and Poisson equations. Spontaneous and piezoelectric effects across the material interfaces are rigorously taken into account. Conduction band profiles, band edges and corresponding envelope functions are calculated in the AlxGa1-xN/GaN structures and likened to those where no polarization effects are included. The combined effect of the polarization-induced bound charge and conduction band offsets between the hexagonal AlGaN and GaN results in the formation of 2DEGs on one side of the DB and a depletion region on the other side. Using the transfer matrix formalism, the vertical transport (J-V characteristics) in AlGaN/GaN RTDs is calculated with a fully SC calculation in the ballistic regime. Compared to standard calculations where the voltage drop along the structure is supposed to be linear, the SC method leads to strong quantitative changes in the J-V characteristics showing that the applied electric field varies significantly in the active region of the structure. The influences of the aluminum composition and the GaN(AlGaN) thickness layers on the evolution of the current characteristics are also self-consistently investigated and discussed. We show that the electrical characteristics are very sensitive to the potential barrier due to the interplay between the potential symmetry and the barrier height and width. More interestingly, we demonstrate that the figures of merit namely the peak-to-valley ratio (PVR) of GaN/AlGaN RTDs can be optimized by increasing the quantum well width.

Band shift of 2D transition-metal dichalcogenide alloys: size and composition effects

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Zhang, Zhe; Ouyang, Gang

2018-04-01

Band engineering of 2D transition-metal dichalcogenides (2D-TMDs) is a vital task for their applications in electronic and optoelectronic nanodevices. In this study, we investigate the joint effect from size and composition contributions on the band shift of 2D-TMD alloys in terms of atomic bond relaxation consideration. A theoretical model is proposed to pursue the underlying mechanism, which can connect the band offset with the atomic bonding identities in the 2D-TMD alloys. We reveal that the bandgap of 2D-TMD alloys presents a bowing shape owing to the size-dependent interaction among atoms and shows blue shift or red shift due to different intermixing of components. It is demonstrated that both size and composition can be performed as the useful methods to modulate the band shift, which suggests an effective way to realize the desirable properties of 2D-TMD alloys.

Jump-and-return sandwiches: A new family of binomial-like selective inversion sequences with improved performance.

PubMed

Brenner, Tom; Chen, Johnny; Stait-Gardner, Tim; Zheng, Gang; Matsukawa, Shingo; Price, William S

2018-03-01

A new family of binomial-like inversion sequences, named jump-and-return sandwiches (JRS), has been developed by inserting a binomial-like sequence into a standard jump-and-return sequence, discovered through use of a stochastic Genetic Algorithm optimisation. Compared to currently used binomial-like inversion sequences (e.g., 3-9-19 and W5), the new sequences afford wider inversion bands and narrower non-inversion bands with an equal number of pulses. As an example, two jump-and-return sandwich 10-pulse sequences achieved 95% inversion at offsets corresponding to 9.4% and 10.3% of the non-inversion band spacing, compared to 14.7% for the binomial-like W5 inversion sequence, i.e., they afforded non-inversion bands about two thirds the width of the W5 non-inversion band. Copyright © 2018 Elsevier Inc. All rights reserved.

Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

NASA Astrophysics Data System (ADS)

Vijaya Shanthi, R.; Jayakumar, K.; Nithiananthi, P.

2015-02-01

To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.

An Analysis LANDSAT-4 Thematic Mapper Geometric Properties

NASA Technical Reports Server (NTRS)

Walker, R. E.; Zobrist, A. L.; Bryant, N. A.; Gokhman, B.; Friedman, S. Z.; Logan, T. L.

1984-01-01

LANDSAT Thematic Mapper P-data of Washington, D. C., Harrisburg, PA, and Salton Sea, CA are analyzed to determine magnitudes and causes of error in the geometric conformity of the data to known Earth surface geometry. Several tests of data geometry are performed. Intraband and interband correlation and registration are investigated, exclusive of map based ground truth. The magnitudes and statistical trends of pixel offsets between a single band's mirror scans (due to processing procedures) are computed, and the inter-band integrity of registration is analyzed. A line to line correlation analysis is included.

A Microwave Tunable Bandpass Filter for Liquid Crystal Applications

NASA Astrophysics Data System (ADS)

Cao, Weiping; Jiang, Di; Liu, Yupeng; Yang, Yuanwang; Gan, Baichuan

2017-07-01

In this paper, a novel microwave continuously tunable band-pass filter, based on nematic liquid crystals (LCs), is proposed. It uses liquid crystal (LC) as the electro-optic material to mainly realize frequency shift at microwave band by changing the dielectric anisotropy, when applying the bias voltage. According to simulation results, it achieves 840 MHz offset. Comparing to the existing tunable filter, it has many advantages, such as continuously tunable, miniaturization, low processing costs, low tuning voltage, etc. Thus, it has shown great potentials in frequency domain and practical applications in modern communication.

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

NASA Astrophysics Data System (ADS)

Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

2017-09-01

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Ohmic contacts on n-type β-Ga 2O 3 using AZO/Ti/Au

DOE PAGES

Carey, IV, Patrick H.; Yang, Jiancheng; Ren, F.; ...

2017-09-14

AZO interlayers between n-Ga 2O 3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga 2O 3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10 -5 Ω-cm 2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga 2O 3 is 0.79 eV and providesmore » a favorable pathway for improved electron transport across this interface.« less

Optical investigation of the strong spin-orbit-coupled magnetic semimetal YbMnBi2

NASA Astrophysics Data System (ADS)

Chaudhuri, Dipanjan; Cheng, Bing; Yaresko, Alexander; Gibson, Quinn D.; Cava, R. J.; Armitage, N. P.

2017-08-01

Strong spin-orbit coupling (SOC) can result in ground states with nontrivial topological properties. The situation is even richer in magnetic systems where the magnetic ordering can potentially have strong influence over the electronic band structure. The class of A MnBi2 (A = Sr, Ca) compounds are important in this context as they are known to host massive Dirac fermions with strongly anisotropic dispersion, which is believed to be due to the interplay between strong SOC and magnetic degrees of freedom. We report the optical conductivity of YbMnBi2, a newly discovered member of this family and a proposed Weyl semimetal (WSM) candidate with broken time reversal symmetry. Together with density functional theory (DFT) band-structure calculations, we show that the complex conductivity can be interpreted as the sum of an intraband Drude response and interband transitions. We argue that the canting of the magnetic moments that has been proposed to be essential for the realization of the WSM in an otherwise antiferromagnetically ordered system is not necessary to explain the optical conductivity. We believe our data is explained qualitatively by the uncanted magnetic structure with a small offset of the chemical potential from strict stochiometry. We find no definitive evidence of a bulk Weyl nodes. Instead, we see signatures of a gapped Dirac dispersion, common in other members of A MnBi2 family or compounds with similar 2D network of Bi atoms. We speculate that the evidence for a WSM seen in ARPES arises through a surface magnetic phase. Such an assumption reconciles all known experimental data.

Factors influencing current interests and motivations of local governments to supply carbon offset credits from urban forestry

Treesearch

N. Poudyal; J. Siry; M. Bowker

2009-01-01

This study conducted a nationwide survey of municipal governments in the United States to assess their motivations, willingness, and technical as well as managerial capacities of cities to store carbon and sell carbon offsets. The analysis reveals that cities are fairly interested in selling carbon offsets and their interest in carbon trading is driven by the degree of...

Shift of semimetal-semiconductor bond direction on “0 1 1” to “1 1 1” Bismuth quazi-two-dimension system

NASA Astrophysics Data System (ADS)

Yazdani, Ahmad; Hamreh, Sajad

2018-03-01

The electronic structure of the nanocrystallines and quasi-two-dimensional systems strongly impressed by the thermodynamic- behavior mainly due to excess of hidden surface free energy. Therefore, the stability of crystalline structure’s change could be related to band-offset of bond rupturing of atomic displacements. whereas for the electronic-structure of "Bi" it seams the competition of L.S and bond exchange should be effectively dominated. Besides all of the characters behave spatial like strong sensitive oxidation here it is supposed that strong correlated electronic structure in the absence of oxygen is resulted on direction of redistribution of surface chemical bond formation before any reconstructive structure. Where • The metallic direction of electronic structure “0 1 1” is changed to “1 1 1” semiconductor direction. • the effect of L.S is more evident on the local density of state while it is not observable around the fermi level. • Strong effect of spin-orbit interaction on splitting of the valance to nearly conduction band around the fermi level is more evident.

Design of a 32-Channel EEG System for Brain Control Interface Applications

PubMed Central

Wang, Ching-Sung

2012-01-01

This study integrates the hardware circuit design and the development support of the software interface to achieve a 32-channel EEG system for BCI applications. Since the EEG signals of human bodies are generally very weak, in addition to preventing noise interference, it also requires avoiding the waveform distortion as well as waveform offset and so on; therefore, the design of a preamplifier with high common-mode rejection ratio and high signal-to-noise ratio is very important. Moreover, the friction between the electrode pads and the skin as well as the design of dual power supply will generate DC bias which affects the measurement signals. For this reason, this study specially designs an improved single-power AC-coupled circuit, which effectively reduces the DC bias and improves the error caused by the effects of part errors. At the same time, the digital way is applied to design the adjustable amplification and filter function, which can design for different EEG frequency bands. For the analog circuit, a frequency band will be taken out through the filtering circuit and then the digital filtering design will be used to adjust the extracted frequency band for the target frequency band, combining with MATLAB to design man-machine interface for displaying brain wave. Finally the measured signals are compared to the traditional 32-channel EEG signals. In addition to meeting the IFCN standards, the system design also conducted measurement verification in the standard EEG isolation room in order to demonstrate the accuracy and reliability of this system design. PMID:22778545

Design of a 32-channel EEG system for brain control interface applications.

PubMed

Wang, Ching-Sung

2012-01-01

This study integrates the hardware circuit design and the development support of the software interface to achieve a 32-channel EEG system for BCI applications. Since the EEG signals of human bodies are generally very weak, in addition to preventing noise interference, it also requires avoiding the waveform distortion as well as waveform offset and so on; therefore, the design of a preamplifier with high common-mode rejection ratio and high signal-to-noise ratio is very important. Moreover, the friction between the electrode pads and the skin as well as the design of dual power supply will generate DC bias which affects the measurement signals. For this reason, this study specially designs an improved single-power AC-coupled circuit, which effectively reduces the DC bias and improves the error caused by the effects of part errors. At the same time, the digital way is applied to design the adjustable amplification and filter function, which can design for different EEG frequency bands. For the analog circuit, a frequency band will be taken out through the filtering circuit and then the digital filtering design will be used to adjust the extracted frequency band for the target frequency band, combining with MATLAB to design man-machine interface for displaying brain wave. Finally the measured signals are compared to the traditional 32-channel EEG signals. In addition to meeting the IFCN standards, the system design also conducted measurement verification in the standard EEG isolation room in order to demonstrate the accuracy and reliability of this system design.

Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

2003-11-25

A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

A reconfigurable multi-mode multi-band transmitter with integrated frequency synthesizer for short-range wireless communication

NASA Astrophysics Data System (ADS)

Nan, Qi; Fan, Chen; Lingwei, Zhang; Xiaoman, Wang; Baoyong, Chi

2013-09-01

A reconfigurable multi-mode direct-conversion transmitter (TX) with integrated frequency synthesizer (FS) is presented. The TX as well as the FS is designed with a flexible architecture and frequency plan, which helps to support all the 433/868/915 MHz ISM band signals, with the reconfigurable bandwidth from 250 kHz to 2 MHz. In order to save power and chip area, only one 1.8 GHz VCO is adopted to cover the whole frequency range. All the operation modes can be regulated in real time by configuring the integrated register-bank through an SPI interface. Implemented in 180 nm CMOS, the FS achieves a frequency coverage of 320-460 MHz and 620-920 MHz. The lowest phase noise can be -107 dBc/Hz at a 100 kHz offset and -126 dBc/Hz at a 1 MHz offset. The transmitter features a + 10.2 dBm peak output power with a +9.5 dBm 1-dB-compression point and 250 kHz/500 kHz/1 MHz/2 MHz reconfigurable signal bandwidth.

Environmentally sensitive theory of electronic and optical transitions in atomically thin semiconductors

NASA Astrophysics Data System (ADS)

Cho, Yeongsu; Berkelbach, Timothy C.

2018-01-01

We present an electrostatic theory of band-gap renormalization in atomically thin semiconductors that captures the strong sensitivity to the surrounding dielectric environment. In particular, our theory aims to correct known band gaps, such as that of the three-dimensional bulk crystal. Combining our quasiparticle band gaps with an effective-mass theory of excitons yields environmentally sensitive optical gaps as would be observed in absorption or photoluminescence. For an isolated monolayer of MoS2, the presented theory is in good agreement with ab initio results based on the G W approximation and the Bethe-Salpeter equation. We find that changes in the electronic band gap are almost exactly offset by changes in the exciton binding energy such that the energy of the first optical transition is nearly independent of the electrostatic environment, rationalizing experimental observations.

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

PubMed Central

Sadofyev, Yuri G.; Samal, Nigamananda

2010-01-01

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

ENDOR with band-selective shaped inversion pulses

NASA Astrophysics Data System (ADS)

Tait, Claudia E.; Stoll, Stefan

2017-04-01

Electron Nuclear DOuble Resonance (ENDOR) is based on the measurement of nuclear transition frequencies through detection of changes in the polarization of electron transitions. In Davies ENDOR, the initial polarization is generated by a selective microwave inversion pulse. The rectangular inversion pulses typically used are characterized by a relatively low selectivity, with full inversion achieved only for a limited number of spin packets with small resonance offsets. With the introduction of pulse shaping to EPR, the rectangular inversion pulses can be replaced with shaped pulses with increased selectivity. Band-selective inversion pulses are characterized by almost rectangular inversion profiles, leading to full inversion for spin packets with resonance offsets within the pulse excitation bandwidth and leaving spin packets outside the excitation bandwidth largely unaffected. Here, we explore the consequences of using different band-selective amplitude-modulated pulses designed for NMR as the inversion pulse in ENDOR. We find an increased sensitivity for small hyperfine couplings compared to rectangular pulses of the same bandwidth. In echo-detected Davies-type ENDOR, finite Fourier series inversion pulses combine the advantages of increased absolute ENDOR sensitivity of short rectangular inversion pulses and increased sensitivity for small hyperfine couplings of long rectangular inversion pulses. The use of pulses with an almost rectangular frequency-domain profile also allows for increased control of the hyperfine contrast selectivity. At X-band, acquisition of echo transients as a function of radiofrequency and appropriate selection of integration windows during data processing allows efficient separation of contributions from weakly and strongly coupled nuclei in overlapping ENDOR spectra within a single experiment.

Widely tunable laser frequency offset lock with 30 GHz range and 5 THz offset.

PubMed

Biesheuvel, J; Noom, D W E; Salumbides, E J; Sheridan, K T; Ubachs, W; Koelemeij, J C J

2013-06-17

We demonstrate a simple and versatile method to greatly extend the tuning range of optical frequency shifting devices, such as acousto-optic modulators (AOMs). We use this method to stabilize the frequency of a tunable narrow-band continuous-wave (CW) laser to a transmission maximum of an external Fabry-Perot interferometer (FPI) with a tunable frequency offset. This is achieved through a servo loop which contains an in-loop AOM for simple radiofrequency (RF) tuning of the optical frequency over the full 30 GHz mode-hop-free tuning range of the CW laser. By stabilizing the length of the FPI to a stabilized helium-neon (HeNe) laser (at 5 THz offset from the tunable laser) we simultaneously transfer the ~ 1 MHz absolute frequency stability of the HeNe laser to the entire 30 GHz range of the tunable laser. Thus, our method allows simple, wide-range, fast and reproducible optical frequency tuning and absolute optical frequency measurements through RF electronics, which is here demonstrated by repeatedly recording a 27-GHz-wide molecular iodine spectrum at scan rates up to 500 MHz/s. General technical aspects that determine the performance of the method are discussed in detail.

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities

DOE PAGES

Ngai, J. H.; Ahmadi-Majlan, K.; Moghadam, J.; ...

2017-01-12

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. In this paper, we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypicalmore » heterostructures, Ba 1-xSr xTiO 3/Ge and SrZr xTi 1-xO 3/Ge, will be discussed. In the case of Ba 1-xSr xTiO 3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZr xTi 1-xO 3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Finally, analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities.« less

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ngai, J. H.; Ahmadi-Majlan, K.; Moghadam, J.

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. In this paper, we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypicalmore » heterostructures, Ba 1-xSr xTiO 3/Ge and SrZr xTi 1-xO 3/Ge, will be discussed. In the case of Ba 1-xSr xTiO 3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZr xTi 1-xO 3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Finally, analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities.« less

Development of landsat-5 thematic mapper internal calibrator gain and offset table

USGS Publications Warehouse

Barsi, J.A.; Chander, G.; Micijevic, E.; Markham, B.L.; Haque, Md. O.

2008-01-01

The National Landsat Archive Production System (NLAPS) has been the primary processing system for Landsat data since U.S. Geological Survey (USGS) Earth Resources Observation and Science Center (EROS) started archiving Landsat data. NLAPS converts raw satellite data into radiometrically and geometrically calibrated products. NLAPS has historically used the Internal Calibrator (IC) to calibrate the reflective bands of the Landsat-5 Thematic Mapper (TM), even though the lamps in the IC were less stable than the TM detectors, as evidenced by vicarious calibration results. In 2003, a major effort was made to model the actual TM gain change and to update NLAPS to use this model rather than the unstable IC data for radiometric calibration. The model coefficients were revised in 2007 to reflect greater understanding of the changes in the TM responsivity. While the calibration updates are important to users with recently processed data, the processing system no longer calculates the original IC gain or offset. For specific applications, it is useful to have a record of the gain and offset actually applied to the older data. Thus, the NLAPS calibration database was used to generate estimated daily values for the radiometric gain and offset that might have been applied to TM data. This paper discusses the need for and generation of the NLAPSIC gain and offset tables. A companion paper covers the application of and errors associated with using these tables.

Radio Frequency Compatibility Evaluation of S Band Navigation Signals for Future BeiDou

PubMed Central

Sun, Yanbo; Xue, Rui; Zhao, Danfeng; Wang, Dun

2017-01-01

With L band frequency allocations for satellite navigation getting more crowded, S band (2483.5–2500 MHz) is already allocated for navigation services, where Globalstar broadcasts downlink communications to user terminals. The Indian Regional Navigation Satellite System (IRNSS) is transmitting navigation signals and Galileo exploits some potential signals in S band. Also, several candidate S band signals based on binary offset carrier (BOC), binary phase shift keying (BPSK), continuous phase modulation (CPM) and minimum shift keying-BOC (MSK-BOC) are suggested for BeiDou system (BDS). In quite narrow S band, mutual interference among these systems is inevitable, thus the compatibility issue is particularly significant for S band signal design. To explore desired S band signals for BDS, the paper firstly describes a comprehensive compatibility evaluation methods based on effective carrier-to-noise ratio degradation for acquisition and code tracking. Then a real simulation is established using space constellations, modulation schemes and received power. Finally, the worst mutual interference of BDS candidate signals with Galileo, IRNSS and Globalstar is calculated and compared. The results indicate that CPM signal is easier to allow peaceful coexistence of other systems with minimal mutual interference in S band compared to other BDS candidates. PMID:28475142

Radio Frequency Compatibility Evaluation of S Band Navigation Signals for Future BeiDou.

PubMed

Sun, Yanbo; Xue, Rui; Zhao, Danfeng; Wang, Dun

2017-05-05

With L band frequency allocations for satellite navigation getting more crowded, S band (2483.5-2500 MHz) is already allocated for navigation services, where Globalstar broadcasts downlink communications to user terminals. The Indian Regional Navigation Satellite System (IRNSS) is transmitting navigation signals and Galileo exploits some potential signals in S band. Also, several candidate S band signals based on binary offset carrier (BOC), binary phase shift keying (BPSK), continuous phase modulation (CPM) and minimum shift keying-BOC (MSK-BOC) are suggested for BeiDou system (BDS). In quite narrow S band, mutual interference among these systems is inevitable, thus the compatibility issue is particularly significant for S band signal design. To explore desired S band signals for BDS, the paper firstly describes a comprehensive compatibility evaluation methods based on effective carrier-to-noise ratio degradation for acquisition and code tracking. Then a real simulation is established using space constellations, modulation schemes and received power. Finally, the worst mutual interference of BDS candidate signals with Galileo, IRNSS and Globalstar is calculated and compared. The results indicate that CPM signal is easier to allow peaceful coexistence of other systems with minimal mutual interference in S band compared to other BDS candidates.

Hybrid density functional study of band alignment in ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures.

PubMed

Wang, Zhenhai; Zhao, Mingwen; Wang, Xiaopeng; Xi, Yan; He, Xiujie; Liu, Xiangdong; Yan, Shishen

2012-12-05

The band alignment in ZnO-GaN and related heterostructures is crucial for uses in solar harvesting technology. Here, we report our density functional calculations of the band alignment and optical properties of ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures using a Heyd-Scuseria-Ernzerhof (HSE) hybrid functional. We found that the conventional GGA functionals underestimate not only the band gap but also the band offset of these heterostructures. Using the hybrid functional calculations, we show that the (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution has a direct band gap of about 2.608 eV, in good agreement with the experimental data. More importantly, this solid solution forms type-II band alignment with the host materials. A GaN-(Ga(1-x)Zn(x))(N(1-x)O(x))-ZnO core-shell solar cell model is presented to improve the visible light absorption ability and carrier collection efficiency.

2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications

NASA Astrophysics Data System (ADS)

Cheng, Kai; Guo, Yu; Han, Nannan; Jiang, Xue; Zhang, Junfeng; Ahuja, Rajeev; Su, Yan; Zhao, Jijun

2018-04-01

Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.

Improved Tracking of an Atomic-Clock Resonance Transition

NASA Technical Reports Server (NTRS)

Prestage, John D.; Chung, Sang K.; Tu, Meirong

2010-01-01

An improved method of making an electronic oscillator track the frequency of an atomic-clock resonance transition is based on fitting a theoretical nonlinear curve to measurements at three oscillator frequencies within the operational frequency band of the transition (in other words, at three points within the resonance peak). In the measurement process, the frequency of a microwave oscillator is repeatedly set at various offsets from the nominal resonance frequency, the oscillator signal is applied in a square pulse of the oscillator signal having a suitable duration (typically, of the order of a second), and, for each pulse at each frequency offset, fluorescence photons of the transition in question are counted. As described below, the counts are used to determine a new nominal resonance frequency. Thereafter, offsets are determined with respect to the new resonance frequency. The process as described thus far is repeated so as to repeatedly adjust the oscillator to track the most recent estimate of the nominal resonance frequency.

Offset-frequency locking of extended-cavity diode lasers for precision spectroscopy of water at 1.38 μm.

PubMed

Gianfrani, Livio; Castrillo, Antonio; Fasci, Eugenio; Galzerano, Gianluca; Casa, Giovanni; Laporta, Paolo

2010-10-11

We describe a continuous-wave diode laser spectrometer for water-vapour precision spectroscopy at 1.38 μm. The spectrometer is based upon the use of a simple scheme for offset-frequency locking of a pair of extended-cavity diode lasers that allows to achieve unprecedented accuracy and reproducibility levels in measuring molecular absorption. When locked to the master laser with an offset frequency of 1.5 GHz, the slave laser exhibits residual frequency fluctuations of 1 kHz over a time interval of 25 minutes, for a 1-s integration time. The slave laser could be continuously tuned up to 3 GHz, the scan showing relative deviations from linearity below the 10{-6} level. Simultaneously, a capture range of the order of 1 GHz was obtained. Quantitative spectroscopy was also demonstrated by accurately determining relevant spectroscopic parameters for the 22,1→22,0line of the H2(18)O v1+v3 band at 1384.6008 nm.

Mechanisms for Adjusting Interaural Time Differences to Achieve Binaural Coincidence Detection

PubMed Central

Seidl, Armin H.; Rubel, Edwin W; Harris, David M.

2010-01-01

Understanding binaural perception requires detailed analyses of the neural circuitry responsible for the computation of interaural time differences (ITDs). In the avian brainstem, this circuit consists of internal axonal delay lines innervating an array of coincidence detector neurons that encode external ITDs. Nucleus magnocellularis (NM) neurons project to the dorsal dendritic field of the ipsilateral nucleus laminaris (NL) and to the ventral field of the contralateral NL. Contralateral-projecting axons form a delay line system along a band of NL neurons. Binaural acoustic signals in the form of phase-locked action potentials from NM cells arrive at NL and establish a topographic map of sound source location along the azimuth. These pathways are assumed to represent a circuit similar to the Jeffress model of sound localization, establishing a place code along an isofrequency contour of NL. Three-dimensional measurements of axon lengths reveal major discrepancies with the current model; the temporal offset based on conduction length alone makes encoding of physiological ITDs impossible. However, axon diameter and distances between Nodes of Ranvier also influence signal propagation times along an axon. Our measurements of these parameters reveal that diameter and internode distance can compensate for the temporal offset inferred from axon lengths alone. Together with other recent studies these unexpected results should inspire new thinking on the cellular biology, evolution and plasticity of the circuitry underlying low frequency sound localization in both birds and mammals. PMID:20053889

On the physics of frequency domain controlled source electromagnetics in shallow water, 2: transverse anisotropy

NASA Astrophysics Data System (ADS)

Chave, Alan D.; Mattsson, Johan; Everett, Mark E.

2017-11-01

In recent years, marine controlled source electromagnetics (CSEM) has found increasing use in hydrocarbon exploration due to its ability to detect thin resistive zones beneath the seafloor. It is the purpose of this paper to evaluate the physics of CSEM for an ocean whose electrical thickness is comparable to or much thinner than that of the overburden using the in-line configuration through examination of the elliptically-polarized seafloor electric field, the time-averaged energy flow depicted by the real part of the complex Poynting vector, energy dissipation through Joule heating and the Fréchet derivatives of the seafloor field with respect to the sub-seafloor conductivity that is assumed to be transversely anisotropic, with a vertical-to-horizontal resistivity ratio of 3:1. For an ocean whose electrical thickness is comparable to that of the overburden, the seafloor electromagnetic response for a model containing a resistive reservoir layer has a greater amplitude and reduced phase as a function of offset compared to that for a halfspace, or a stronger and faster response, and displays little to no evidence for the air interaction. For an ocean whose electrical thickness is much smaller than that of the overburden, the electric field displays a greater amplitude and reduced phase at small offsets, shifting to a stronger amplitude and increased phase at intermediate offsets, and a weaker amplitude and enhanced phase at long offsets, or a stronger and faster response that first changes to stronger and slower, and then transitions to weaker and slower. By comparison to the isotropic case with the same horizontal conductivity, transverse anisotropy stretches the Poynting vector and the electric field response from a thin resistive layer to much longer offsets. These phenomena can be understood by visualizing the energy flow throughout the structure caused by the competing influences of the dipole source and guided energy flow in the reservoir layer, and the air interaction caused by coupling of the entire sub-seafloor resistivity structure with the sea surface. The Fréchet derivatives are dominated by preferential sensitivity to the vertical conductivity in the reservoir layer and overburden at short offsets. The horizontal conductivity Fréchet derivatives are weaker than to comparable to the vertical derivatives at long offsets in the substrate. This means that the sensitivity to the horizontal conductivity is present in the shallow parts of the subsurface. In the presence of transverse anisotropy, it is necessary to go to higher frequencies to sense the horizontal conductivity in the overburden as compared to an isotropic model with the same horizontal conductivity. These observations in part explain the success of shallow towed CSEM using only measurements of the in-line component of the electric field.

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio.

PubMed

Murali, Krishna; Dandu, Medha; Das, Sarthak; Majumdar, Kausik

2018-02-14

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe 2 /SnSe 2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 10 4 , and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V -1 . The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe 2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.

Electronic and total energy properties of ternary and quaternary semiconductor compounds, alloys and superlattices

NASA Technical Reports Server (NTRS)

Lambrecht, Walter R. L.

1992-01-01

This proposal was mainly concerned with the theoretical study of semiconductor compounds, alloys, and superlattices of interest for photovoltaic applications. In the last year (1991) a study was devoted to metal/graphite bonding in relation to use of graphite fiber reinforcement of Cu for high thermal conductivity applications. The main research topics addressed during the full period of the grant are briefly described: studies of the In-Ga-As ternary system; band-offsets at common anion and InAs/GaSb/AlSb heterojunctions; alloy theory (cluster variation method); and Cu/graphite bonding. Most of the work was described more extensively in previous yearly reports and renewal applications and in publications. The last topic is described more fully in a separate report attached. A list of publications resulting directly from this grant or from other grants but related to this work and of conference presentations is given at the end.

Radio sounding of the solar corona during 1995 solar conjunction of the Ulysses spacecraft

NASA Technical Reports Server (NTRS)

Bird, M. K.; Paetzold, M.; Karl, J.; Edenhofer, P.; Asmar, S. W.

1995-01-01

The Ulysses spacecraft will pass through superior solar conjunction on March 5 1995, a few days before its perihelion and passage through the ecliptic plane. Dual-frequency S/X-band ranging and Doppler observations will be conducted in support of the Ulysses Solar Corona Experiment (SCE) during a three-week interval centered on the conjunction. The occultation geometry is unique in the annals of interplanetary exploration. As viewed from Earth, the spacecraft will appear to cut diagonally through the southwest quadrant of the solar corona from the South Pole to the equator. The minimum proximate distance to the Sun of the radio ray path will be 21.6 solar radius. The entire latitude scan from pole to equator occurs for a limited range of solar offset distances (is less than 30 solar radius thus facilitating the separation of latitudinal from radial variations in the coronal density and associated parameters of interest.

Improvement of Ohmic contacts on Ga 2O 3 through use of ITO-interlayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carey, Patrick H.; Yang, Jiancheng; Ren, Fan

In this work, the use of ITO interlayers between Ga 2O 3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga 2O 3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10 -5 Ω cm 2 were achievedmore » after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga 2O 3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.« less

The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Lien, C.

2015-05-15

Five different kinds of insulators including BaTiO{sub 3}, TiO{sub 2}, Al{sub 2}O{sub 3}, CdO and ZnO on the n-type InGaAs metal-insulator-semiconductor (M-I-S) ohmic contact structure are studied. The effect for the dielectric constant (ε) of inserted insulator and the conduction band offset (CBO) between an insulator and semiconductor substrate is analyzed by a unified M-I-S contact model. Based on the theoretical model and experimental data, we demonstrates that the inserted ZnO insulator with the high electron affinity and the low CBO (∼0.1 eV) to the InGaAs substrate results in ∼10 times contact resistivity reduction, even the ε of ZnO ismore » not pretty high (∼10)« less

Electronic and total energy properties of ternary and quaternary semiconductor compounds, alloys and superlattices

NASA Astrophysics Data System (ADS)

Lambrecht, Walter R. L.

1992-08-01

This proposal was mainly concerned with the theoretical study of semiconductor compounds, alloys, and superlattices of interest for photovoltaic applications. In the last year (1991) a study was devoted to metal/graphite bonding in relation to use of graphite fiber reinforcement of Cu for high thermal conductivity applications. The main research topics addressed during the full period of the grant are briefly described: studies of the In-Ga-As ternary system; band-offsets at common anion and InAs/GaSb/AlSb heterojunctions; alloy theory (cluster variation method); and Cu/graphite bonding. Most of the work was described more extensively in previous yearly reports and renewal applications and in publications. The last topic is described more fully in a separate report attached. A list of publications resulting directly from this grant or from other grants but related to this work and of conference presentations is given at the end.

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Woo, Alex C. (Technical Monitor)

1999-01-01

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

The influence of Si in Ni on the interface modification and the band alignment between Ni and alumina

NASA Astrophysics Data System (ADS)

Yoshitake, Michiko; Nemšák, Slavomír; Skála, Tomáš; Tsud, Nataliya; Matolín, Vladimír; Prince, Kevin C.

2018-06-01

The influence of a small amount of Si in a Ni single crystal on the interface formation between aluminum oxide and Ni has been investigated. The interface was formed by in-situ growth of the oxide by simultaneous supply of Al and oxygen onto Ni(1 1 1) in an ultrahigh vacuum chamber equipped with XPS apparatus. The oxide growth and the interface formation were compared between Si-containing Ni(1 1 1) and pure Ni(1 1 1). It was revealed that Si segregated on the surface of Ni and oxidized, forming an epitaxial thin alumino-silicate film. Valence band spectra demonstrated that the band offset between the oxide and Ni (energy level difference between the valence band top and the Fermi level) is different due to the oxidized Si segregation at the interface.

Transition-metal impurities in semiconductors and heterojunction band lineups

NASA Astrophysics Data System (ADS)

Langer, Jerzy M.; Delerue, C.; Lannoo, M.; Heinrich, Helmut

1988-10-01

The validity of a recent proposal that transition-metal impurity levels in semiconductors may serve as a reference in band alignment in semiconductor heterojunctions is positively verified by using the most recent data on band offsets in the following lattice-matched heterojunctions: Ga1-xAlxAs/GaAs, In1-xGaxAsyP1-y/InP, In1-xGaxP/GaAs, and Cd1-xHgxTe/CdTe. The alignment procedure is justified theoretically by showing that transition-metal energy levels are effectively pinned to the average dangling-bond energy level, which serves as the reference level for the heterojunction band alignment. Experimental and theoretical arguments showing that an increasingly popular notion on transition-metal energy-level pinning to the vacuum level is unjustified and must be abandoned in favor of the internal-reference rule proposed recently [J. M. Langer and H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985)] are presented.

Atomic scale origins of sub-band gap optical absorption in gold-hyperdoped silicon

NASA Astrophysics Data System (ADS)

Ferdous, Naheed; Ertekin, Elif

2018-05-01

Gold hyperdoped silicon exhibits room temperature sub band gap optical absorption, with potential applications as infrared absorbers/detectors and impurity band photovoltaics. We use first-principles density functional theory to establish the origins of the sub band gap response. Substitutional gold AuSi and substitutional dimers AuSi - AuSi are found to be the energetically preferred defect configurations, and AuSi gives rise to partially filled mid-gap defect bands well offset from the band edges. AuSi is predicted to offer substantial sub-band gap absorption, exceeding that measured in prior experiments by two orders of magnitude for similar Au concentration. This suggests that in experimentally realized systems, in addition to AuSi, the implanted gold is accommodated by the lattice in other ways, including other defect complexes and gold precipitates. We further identify that it is energetically favorable for isolated AuSi to form AuSi - AuSi, which by contrast do not exhibit mid-gap states. The formation of dimers and other complexes could serve as nuclei in the earliest stages of Au precipitation, which may be responsible for the observed rapid deactivation of sub-band gap response upon annealing.

Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Jaewook

2016-11-01

In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

Two-dimensional n -InSe/p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

NASA Astrophysics Data System (ADS)

Xia, Cong-xin; Du, Juan; Huang, Xiao-wei; Xiao, Wen-bo; Xiong, Wen-qi; Wang, Tian-xing; Wei, Zhong-ming; Jia, Yu; Shi, Jun-jie; Li, Jing-bo

2018-03-01

Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n -InSe/p -GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (˜105 ), broad spectrum width, and excellent carrier mobility (˜103c m2V-1s-1 ). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n -InSe/p -GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.

Toward tunable band gap and tunable dirac point in bilayer graphene with molecular doping.

PubMed

Yu, Woo Jong; Liao, Lei; Chae, Sang Hoon; Lee, Young Hee; Duan, Xiangfeng

2011-11-09

The bilayer graphene has attracted considerable attention for potential applications in future electronics and optoelectronics because of the feasibility to tune its band gap with a vertical displacement field to break the inversion symmetry. Surface chemical doping in bilayer graphene can induce an additional offset voltage to fundamentally affect the vertical displacement field and the band gap opening in bilayer graphene. In this study, we investigate the effect of chemical molecular doping on band gap opening in bilayer graphene devices with single or dual gate modulation. Chemical doping with benzyl viologen molecules modulates the displacement field to allow the opening of a transport band gap and the increase of the on/off ratio in the bilayer graphene transistors. Additionally, Fermi energy level in the opened gap can be rationally controlled by the amount of molecular doping to obtain bilayer graphene transistors with tunable Dirac points, which can be readily configured into functional devices, such as complementary inverters.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-05-01

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-12-01

In situ-formed SiO 2 was introduced into HfO 2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO 2 /SiO 2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO 2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO 2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10 -3 A/cm 2 at gate bias of V fb  + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO 2 /SiO 2 /Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO 2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

ACTS Ka-Band Earth Stations: Technology, Performance, and Lessons Learned

NASA Technical Reports Server (NTRS)

Reinhart, Richard C.; Struharik, Steven J.; Diamond, John J.; Stewart, David

2000-01-01

The Advanced Communications Technology Satellite (ACTS) Project invested heavily in prototype Ka-band satellite ground terminals to conduct an experiments program with the ACTS satellite. The ACTS experiment's program proposed to validate Ka-band satellite and ground station technology. demonstrate future telecommunication services. demonstrate commercial viability and market acceptability of these new services, evaluate system networking and processing technology, and characterize Ka-band propagation effects, including development of techniques to mitigate signal fading. This paper will present a summary of the fixed ground terminals developed by the NASA Glenn Research Center and its industry partners, emphasizing the technology and performance of the terminals (Part 1) and the lessons learned throughout their six year operation including the inclined orbit phase of operations (Full Report). An overview of the Ka-band technology and components developed for the ACTS ground stations is presented. Next. the performance of the ground station technology and its evolution during the ACTS campaign are discussed to illustrate the technical tradeoffs made during the program and highlight technical advances by industry to support the ACTS experiments program and terminal operations. Finally. lessons learned during development and operation of the user terminals are discussed for consideration of commercial adoption into future Ka-band systems. The fixed ground stations used for experiments by government, academic, and commercial entities used reflector based offset-fed antenna systems ranging in size from 0.35m to 3.4m antenna diameter. Gateway earth stations included two systems, referred to as the NASA Ground Station (NGS) and the Link Evaluation Terminal (LET). The NGS provides tracking, telemetry, and control (TT&C) and Time Division Multiple Access (TDMA) network control functions. The LET supports technology verification and high data rate experiments. The ground stations successfully demonstrated many services and applications at Ka-band in three different modes of operation: circuit switched TDMA using the satellite on-board processor, satellite switched SS-TDMA applications using the on-board Microwave Switch Matrix (MSM), and conventional transponder (bent-pipe) operation. Data rates ranged from 4.8 kbps up to 622 Mbps. Experiments included: 1) low rate (4.8- 1 00's kbps) remote data acquisition and control using small earth stations, 2) moderate rate (1-45 Mbps) experiments included full duplex voice and video conferencing and both full duplex and asymmetric data rate protocol and network evaluation using mid-size ground stations, and 3) link characterization experiments and high data rate (155-622 Mbps) terrestrial and satellite interoperability application experiments conducted by a consortium of experimenters using the large transportable ground stations.

VLBI clock synchronization tests performed via the ATS-1 and ATS-3 satellites

NASA Technical Reports Server (NTRS)

Ramasastry, J.; Rosenbaum, B.; Michelini, R. D.; Kuegler, G.

1971-01-01

Clock synchronization experiments were carried out May 10 to June 10, 1971, by the NASA/Goddard Space Flight Center and the Smithsonian Astrophysical Observatory via the ATS-1 and 3 geostationary satellites at the NASA tracking stations Rosman and Mojave, during a VLBI (Very Long Baseline Interferometer) experiment in order to determine the clock-offset between the two stations. Ten microsecond pulses at C-band with very sharp risetime were exchanged by the two stations through the dual transponders of the satellites. At each station, a time-interval counter was started by the transmitted pulse and stopped by the received pulse. The probable error of the difference in the mean values of the clock-offset is 10 nanoseconds.

The VISTA ZYJHKs photometric system: calibration from 2MASS

NASA Astrophysics Data System (ADS)

González-Fernández, C.; Hodgkin, S. T.; Irwin, M. J.; González-Solares, E.; Koposov, S. E.; Lewis, J. R.; Emerson, J. P.; Hewett, P. C.; Yoldaş, A. K.; Riello, M.

2018-03-01

In this paper, we describe the routine photometric calibration of data taken with the VISTA infrared camera (VIRCAM) instrument on the ESO Visible and Infrared Survey Telescope for Astronomy (VISTA) telescope. The broad-band ZYJHKs data are directly calibrated from Two Micron all Sky Survey (2MASS) point sources visible in every VISTA image. We present the empirical transformations between the 2MASS and VISTA, and Wide-Field Camera and VISTA, photometric systems for regions of low reddening. We investigate the long-term performance of VISTA+VIRCAM. An investigation of the dependence of the photometric calibration on interstellar reddening leads to these conclusions: (1) For all broad-band filters, a linear colour-dependent correction compensates the gross effects of reddening where E(B - V) < 5.0. (2) For Z and Y, there is a significantly larger scatter above E(B - V) = 5.0, and insufficient measurements to adequately constrain the relation beyond this value. (3) The JHKs filters can be corrected to a few per cent up to E(B - V) = 10.0. We analyse spatial systematics over month-long time-scales, both inter- and intradetector and show that these are present only at very low levels in VISTA. We monitor and remove residual detector-to-detector offsets. We compare the calibration of the main pipeline products: pawprints and tiles. We show how variable seeing and transparency affect the final calibration accuracy of VISTA tiles, and discuss a technique, grouting, for mitigating these effects. Comparison between repeated reference fields is used to demonstrate that the VISTA photometry is precise to better than ≃ 2 per cent for the YJHKs bands and 3 per cent for the Z bands. Finally, we present empirically determined offsets to transform VISTA magnitudes into a true Vega system.

Electronic structure and bonding of intergranular glassy films in polycrystalline Si3 N4 : Ab initio studies and classical molecular dynamics simulations

NASA Astrophysics Data System (ADS)

Rulis, P.; Chen, J.; Ouyang, L.; Ching, W.-Y.; Su, X.; Garofalini, S. H.

2005-06-01

The electronic structure and bonding of a realistic model of an intergranular glassy film (IGF) was studied with multiple computational methods. The model has a Si-O-N glassy region sandwiched between crystalline basal planes of β-Si3N4 and contains a total of 798 atoms. It was constructed with periodic boundary conditions via classical molecular dynamics (MD) techniques using an accurate multibody atomic potential. The model was then further relaxed by the VASP (Vienna ab initio simulation package) program. It is shown that the VASP-relaxed structure reduces the total energy from the MD-relaxed structure by only 47.38eV , validating the accuracy of the multiatom potential used. The calculated electronic structure shows the IGF model to be an insulator with a sizable gap of almost 3eV . Quasidefectlike states can be identified near the band edges arising from the more strained Si-N and Si-O bonds at the interface. Calculation of the Mulliken effective charge and bond order values indicates that the bonds in the glassy region and at the interface can be enhanced and weakened by distortions in the bond length and bond angle. The states at the top of the valence band are derived mostly from the crystalline part of the Si-N bonding while the states at the bottom of the conduction band are dominated by the Si-O bonding in the glassy region. Calculation of the electrostatic potential across the interface shows an average band offset of about 1.5eV between the crystalline β-Si3N4 and the glassy Si-O-N region which could be related to the space charge model for IGF.

Detection of secondary eclipses of WASP-10b and Qatar-1b in the Ks band and the correlation between Ks-band temperature and stellar activity.

NASA Astrophysics Data System (ADS)

Cruz, Patricia; Barrado, David; Lillo-Box, Jorge; Diaz, Marcos; López-Morales, Mercedes; Birkby, Jayne; Fortney, Jonathan J.; Hodgkin, Simon

2017-10-01

The Calar Alto Secondary Eclipse study was a program dedicated to observe secondary eclipses in the near-IR of two known close-orbiting exoplanets around K-dwarfs: WASP-10b and Qatar-1b. Such observations reveal hints on the orbital configuration of the system and on the thermal emission of the exoplanet, which allows the study of the brightness temperature of its atmosphere. The observations were performed at the Calar Alto Observatory (Spain). We used the OMEGA2000 instrument (Ks band) at the 3.5m telescope. The data was acquired with the telescope strongly defocused. The differential light curve was corrected from systematic effects using the Principal Component Analysis (PCA) technique. The final light curve was fitted using an occultation model to find the eclipse depth and a possible phase shift by performing a MCMC analysis. The observations have revealed a secondary eclipse of WASP-10b with depth of 0.137%, and a depth of 0.196% for Qatar-1b. The observed phase offset from expected mid-eclipse was of -0.0028 for WASP-10b, and of -0.0079 for Qatar-1b. These measured offsets led to a value for |ecosω| of 0.0044 for the WASP-10b system, leading to a derived eccentricity which was too small to be of any significance. For Qatar-1b, we have derived a |ecosω| of 0.0123, however, this last result needs to be confirmed with more data. The estimated Ks-band brightness temperatures are of 1647 K and 1885 K for WASP-10b and Qatar-1b, respectively. We also found an empirical correlation between the (R'HK) activity index of planet hosts and the Ks-band brightness temperature of exoplanets, considering a small number of systems.

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao, E-mail: tsong241@gmail.com; Sites, James R.; Kanevce, Ana

The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interfacemore » defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

Band offset and electronic properties at semipolar plane AlN(1\\bar{1}01)/diamond heterointerface

NASA Astrophysics Data System (ADS)

Wu, Kong-Ping; Ma, Wen-Fei; Sun, Chang-Xu; Chen, Chang-Zhao; Ling, Liu-Yi; Wang, Zhong-Gen

2018-05-01

Not Available Project supported by the Scholarship Council of China (Grant No. 201508340047), the Postdoctoral Science Foundation of China (Grant No. 2016M601993), the Postdoctoral Science Foundation of Anhui Province, China (Grant No. 2017B215), and the Anhui Province University Outstanding Talent Cultivation Program, China (Grant No. gxfxZD2016077).

Offset active galactic nuclei as tracers of galaxy mergers and supermassive black hole growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comerford, Julia M.; Greene, Jenny E.

2014-07-10

Offset active galactic nuclei (AGNs) are AGNs that are in ongoing galaxy mergers, which produce kinematic offsets in the AGNs relative to their host galaxies. Offset AGNs are also close relatives of dual AGNs. We conduct a systematic search for offset AGNs in the Sloan Digital Sky Survey by selecting AGN emission lines that exhibit statistically significant line-of-sight velocity offsets relative to systemic. From a parent sample of 18,314 Type 2 AGNs at z < 0.21, we identify 351 offset AGN candidates with velocity offsets of 50 km s{sup –1} < |Δv| < 410 km s{sup –1}. When we accountmore » for projection effects in the observed velocities, we estimate that 4%-8% of AGNs are offset AGNs. We designed our selection criteria to bypass velocity offsets produced by rotating gas disks, AGN outflows, and gravitational recoil of supermassive black holes, but follow-up observations are still required to confirm our candidates as offset AGNs. We find that the fraction of AGNs that are offset candidates increases with AGN bolometric luminosity, from 0.7% to 6% over the luminosity range 43 < log (L{sub bol}) [erg s{sup –1}] <46. If these candidates are shown to be bona fide offset AGNs, then this would be direct observational evidence that galaxy mergers preferentially trigger high-luminosity AGNs. Finally, we find that the fraction of AGNs that are offset AGN candidates increases from 1.9% at z = 0.1 to 32% at z = 0.7, in step with the growth in the galaxy merger fraction over the same redshift range.« less

OBIST methodology incorporating modified sensitivity of pulses for active analogue filter components

NASA Astrophysics Data System (ADS)

Khade, R. H.; Chaudhari, D. S.

2018-03-01

In this paper, oscillation-based built-in self-test method is used to diagnose catastrophic and parametric faults in integrated circuits. Sallen-Key low pass filter and high pass filter circuits with different gains are used to investigate defects. Variation in seven parameters of operational amplifier (OP-AMP) like gain, input impedance, output impedance, slew rate, input bias current, input offset current, input offset voltage and catastrophic as well as parametric defects in components outside OP-AMP are introduced in the circuit and simulation results are analysed. Oscillator output signal is converted to pulses which are used to generate a signature of the circuit. The signature and pulse count changes with the type of fault present in the circuit under test (CUT). The change in oscillation frequency is observed for fault detection. Designer has flexibility to predefine tolerance band of cut-off frequency and range of pulses for which circuit should be accepted. The fault coverage depends upon the required tolerance band of the CUT. We propose a modification of sensitivity of parameter (pulses) to avoid test escape and enhance yield. Result shows that the method provides 100% fault coverage for catastrophic faults.

VIIRS thermal emissive bands on-orbit calibration coefficient performance using vicarious calibration results

NASA Astrophysics Data System (ADS)

Moyer, D.; Moeller, C.; De Luccia, F.

2013-09-01

The Visible Infrared Imager Radiometer Suite (VIIRS), a primary sensor on-board the Suomi-National Polar-orbiting Partnership (SNPP) spacecraft, was launched October 28, 2011. It has 22 bands: 7 thermal emissive bands (TEBs), 14 reflective solar bands (RSBs) and a Day Night Band (DNB). The TEBs cover the spectral wavelengths between 3.7 to 12 μm and have two 371 m and five 742 m spatial resolution bands. A VIIRS Key Performance Parameter (KPP) is the sea surface temperature (SST) which uses bands M12 (3.7 μm), M15 (10.8 μm) and M16's (12.0 μm) calibrated Science Data Records (SDRs). The TEB SDRs rely on pre-launch calibration coefficients used in a quadratic algorithm to convert the detector's response to calibrated radiance. This paper will evaluate the performance of these prelaunch calibration coefficients using vicarious calibration information from the Cross-track Infrared Sounder (CrIS) also onboard the SNPP spacecraft and the Infrared Atmospheric Sounding Interferometer (IASI) on-board the Meteorological Operational (MetOp) satellite. Changes to the pre-launch calibration coefficients' offset term c0 to improve the SDR's performance at cold scene temperatures will also be discussed.

Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

Here, to compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In,Ga)Se 2 (CIGSe), and Cu 2ZnSn(S,Se) 4 (CZTSSe), improving the n-type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdSmore » or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.« less

HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, P.T.; /Stanford U., Materials Sci. Dept.; Sun, Y.

2007-09-28

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopymore » cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.« less

Use of a Closed-Loop Tracking Algorithm for Orientation Bias Determination of an S-Band Ground Station

NASA Technical Reports Server (NTRS)

Welch, Bryan W.; Piasecki, Marie T.; Schrage, Dean S.

2015-01-01

The Space Communications and Navigation (SCaN) Testbed project completed installation and checkout testing of a new S-Band ground station at the NASA Glenn Research Center in Cleveland, Ohio in 2015. As with all ground stations, a key alignment process must be conducted to obtain offset angles in azimuth (AZ) and elevation (EL). In telescopes with AZ-EL gimbals, this is normally done with a two-star alignment process, where telescope-based pointing vectors are derived from catalogued locations with the AZ-EL bias angles derived from the pointing vector difference. For an antenna, the process is complicated without an optical asset. For the present study, the solution was to utilize the gimbal control algorithms closed-loop tracking capability to acquire the peak received power signal automatically from two distinct NASA Tracking and Data Relay Satellite (TDRS) spacecraft, without a human making the pointing adjustments. Briefly, the TDRS satellite acts as a simulated optical source and the alignment process proceeds exactly the same way as a one-star alignment. The data reduction process, which will be discussed in the paper, results in two bias angles which are retained for future pointing determination. Finally, the paper compares the test results and provides lessons learned from the activity.

Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

DOE PAGES

Varley, J. B.; Lordi, V.; He, X.; ...

2017-07-17

Here, to compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In,Ga)Se 2 (CIGSe), and Cu 2ZnSn(S,Se) 4 (CZTSSe), improving the n-type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdSmore » or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.« less

Heterojunction diodes in 3C-SiC/Si system grown by reactive magnetron sputtering: Effects of growth temperature on diode rectification and breakdown

NASA Astrophysics Data System (ADS)

Wahab, Q.; Karlsteen, M.; Nur, O.; Hultman, L.; Willander, M.; Sundgren, J.-E.

1996-09-01

3C-SiC/Si heterojunction diodes were prepared by reactive magnetron sputtering of pure Si in CH4-Ar discharge on Si(111) substrates kept at temperatures (Ts) ranging from 800 to 1000°C. A good diode rectification process started for films grown at Ts≤900°C. Heterojunction diodes grown at Ts = 850°C showed the best performance with a saturation current density of 2.4 × 10-4 A cm-2. Diode reverse breakdown was obtained at a voltage of -110 V. The doping concentration (Nd) of the 3C-SiC films was calculated from 1/C2 vs V plot to be 3 × 1015 cm-3. Band offset values obtained were -0.27 and 1.35 eV for the conduction and valence band, respectively. X-ray diffraction analysis revealed the film grown at Ts = 850°C to be single-phase 3C-SiC. The full width at half maximum of the 3C-SiC(111) peak was only 0.25 degree. Cross-sectional transmission electron microscopy showed the film to be highly (111)-oriented with an epitaxial columnar structure of double positioning domain boundaries.

Research Update: Emerging chalcostibite absorbers for thin-film solar cells

DOE PAGES

de Souza Lucas, Francisco Willian; Zakutayev, Andriy

2018-06-04

Copper antimony chalcogenides CuSbCh 2 (Ch=S, Se) are an emerging family of absorbers studied for thin-film solar cells. These non-toxic and Earth-abundant materials show a layered low-dimensional chalcostibite crystal structure, leading to interesting optoelectronic properties for applications in photovoltaic (PV) devices. This research update describes the CuSbCh 2 crystallographic structures, synthesis methods, competing phases, band structures, optoelectronic properties, point defects, carrier dynamics, and interface band offsets, based on experimental and theoretical data. Correlations between these absorber properties and PV device performance are discussed, and opportunities for further increase in the efficiency of the chalcostibite PV devices are highlighted.

Interface Structure, Band Alignment, and Built-In Potentials at LaFeO 3 / n - SrTiO 3 Heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comes, Ryan; Chambers, Scott

We demonstrate that LaFeO 3/n-SrTiO 3(001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and built-in potentials within the LaFeO 3 layer of the same sign. However, heterojunctions with the TiO20-LaO+ interface structure attract electronic charge from the n-STO substrate, whereas those with the SrO0-FeO2-1 interface structure do not. These results suggest that the latter would more effectively facilitate photogenerated electron-hole pair separation than the former, an important result for photoelectrochemical water splitting

Research Update: Emerging chalcostibite absorbers for thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

de Souza Lucas, Francisco Willian; Zakutayev, Andriy

Copper antimony chalcogenides CuSbCh 2 (Ch=S, Se) are an emerging family of absorbers studied for thin-film solar cells. These non-toxic and Earth-abundant materials show a layered low-dimensional chalcostibite crystal structure, leading to interesting optoelectronic properties for applications in photovoltaic (PV) devices. This research update describes the CuSbCh 2 crystallographic structures, synthesis methods, competing phases, band structures, optoelectronic properties, point defects, carrier dynamics, and interface band offsets, based on experimental and theoretical data. Correlations between these absorber properties and PV device performance are discussed, and opportunities for further increase in the efficiency of the chalcostibite PV devices are highlighted.

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailova, M. P.; Ivanov, E. V.; Danilov, L. V.

2014-06-14

We report on superlinear electroluminescent structures based on AlSb/InAs{sub 1−x}Sb{sub x}/AlSb deep quantum wells grown by MOVPE on n-GaSb:Te substrates. Dependence of the electroluminescence (EL) spectra and optical power on the drive current in nanoheterostructures with AlSb/InAs{sub 1−x}Sb{sub x}/AlSb quantum well at 77–300 K temperature range was studied. Intensive two-band superlinear EL in the 0.5–0.8 eV photon energy range was observed. Optical power enhancement with the increasing drive current at room temperature is caused by the contribution of the additional electron-hole pairs due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electronmore » level E{sub e1} in the InAsSb QW. Study of the EL temperature dependence at 90–300 K range enabled us to define the role of the first and second heavy hole levels in the radiative recombination process. It was shown that with the temperature decrease, the relation between the energies of the valence band offset and the second heavy hole energy level changes due to the temperature transformation of the energy band diagram. That is the reason why the EL spectrum revealed radiative transitions from the first electron level E{sub e1} to the first hole level E{sub h1} in the whole temperature range (90–300 K), while the emission band related with the transitions to the second hole level occurred only at T > 200 K. Comparative examination of the nanostructures with high band offsets and different interface types (AlAs-like and InSb-like) reveals more intense EL and optical power enhancement at room temperature in the case of AlAs-like interface that could be explained by the better quality of the heterointerface and more efficient hole localization.« less

Study of weld offset in longitudinally welded SSME HPFTP inlet

NASA Technical Reports Server (NTRS)

Min, J. B.; Spanyer, K. S.; Brunair, R. M.

1992-01-01

Welded joints are an essential part of rocket engine structures such as the Space Shuttle Main Engine (SSME) turbopumps. Defects produced in the welding process can be detrimental to weld performance. Recently, review of the SSME high pressure fuel turbopump (HPFTP) titanium inlet X-rays revealed several weld discrepancies such as penetrameter density issues, film processing discrepancies, weld width discrepancies, porosity, lack of fusion, and weld offsets. Currently, the sensitivity of welded structures to defects is of concern. From a fatigue standpoint, weld offset may have a serious effect since local yielding, in general, aggravates cyclic stress effects. Therefore, the weld offset issue is considered in this report. Using the FEM and beamlike plate approximations, parametric studies were conducted to determine the influence of weld offsets and a variation of weld widths in longitudinally welded cylindrical structures with equal wall thicknesses on both sides of the joint. Following the study, some conclusions are derived for the weld offsets.

Electronic excited states and relaxation dynamics in polymer heterojunction systems

NASA Astrophysics Data System (ADS)

Ramon, John Glenn Santos

The potential for using conducting polymers as the active material in optoelectronic devices has come to fruition in the past few years. Understanding the fundamental photophysics behind their operations points to the significant role played by the polymer interface in their performance. Current device architectures involve the use of bulk heterojunctions which intimately blend the donor and acceptor polymers to significantly increase not only their interfacial surface area but also the probability of exciton formation within the vicinity of the interface. In this dissertation, we detail the role played by the interface on the behavior and performance of bulk heterojunction systems. First, we explore the relation between the exciton binding energy to the band offset in determining device characteristics. As a general rule, when the exciton binding energy is greater than the band offset, the exciton remains the lowest energy excited state leading to efficient light-emitting properties. On the other hand, if the offset is greater than the binding energy, charge separation becomes favorable leading to better photovoltaic behavior. Here, we use a Wannier function, configuration interaction based approach to examine the essential excited states and predict the vibronic absorption and emission spectra of the PPV/BBL, TFB/F8BT and PFB/F8BT heterojunctions. Our results underscore the role of vibrational relaxation in the formation of charge-transfer states following photoexcitation. In addition, we look at the relaxation dynamics that occur upon photoexcitation. For this, we adopt the Marcus-Hush semiclassical method to account for lattice reorganization in the calculation of the interconversion rates in TFB/F8BT and PFB/F8BT. We find that, while a tightly bound charge-transfer state (exciplex) remains the lowest excited state, a regeneration pathway to the optically active lowest excitonic state in TFB/F8BT is possible via thermal repopulation from the exciplex. Finally, we examine the effect of the nanoscale interfacial morphology and solvation on the electronic excited states of TFB/F8BT. Here, we employ time-dependent density functional theory (TD-DFT) to investigate the relevant excited states of two stacking configurations. We show that the calculated states agree with the excited states responsible for the experimentally observed emission peaks and that these states are blue shifted relative to those of the isolated chain. Furthermore, slight lateral shifts in the stacking orientation not only shift the excited state energies; more importantly, they alter the nature of these states altogether. Lastly, we see that solvation greatly stabilizes the charge-transfer states.

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

NASA Astrophysics Data System (ADS)

Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

2018-01-01

The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

Final Report to the Department of Energy Renewable Energy and Energy Efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaughen, Shasta

The Pala Band of Mission Indians was awarded a DOE-EERE Solar Energy Grant for FY 2016 and 2017. The project involved installing a 94.8 kW DC photovoltaic (PC) solar system on the Pala Fire Station to offset up to 95% of grid-derived energy and reduce overall CO 2 generation from the facility. Pala successfully installed rooftop and carport-mounted solar panels at the fire station, and to date has generated of 219,227 kWh of energy and offset 274,034 pounds of CO 2. The project was successfully executed, and we recommend other tribes to undertake similar projects if they are located inmore » areas with sufficient solar exposure. DOE should continue to make these funds available to tribes.« less

Band engineering in twisted molybdenum disulfide bilayers

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Liao, Chengwei; Ouyang, Gang

2018-05-01

In order to explore the theoretical relationship between interlayer spacing, interaction and band offset at the atomic level in vertically stacked two-dimensional (2D) van der Waals (vdW) structures, we propose an analytical model to address the evolution of interlayer vdW coupling with random stacking configurations in MoS2 bilayers based on the atomic-bond-relaxation correlation mechanism. We found that interlayer spacing changes substantially with respect to the orientations, and the bandgap increases from 1.53 eV (AB stacking) to 1.68 eV (AA stacking). Our results reveal that the evolution of interlayer vdW coupling originates from the interlayer interaction, leading to interlayer separations and electronic properties changing with stacking configurations. Our predictions constitute a demonstration of twist engineering the band shift in the emergent class of 2D crystals, transition-metal dichalcogenides.

A Low Cost TDRSS Compatible Transmitter Option

NASA Technical Reports Server (NTRS)

Whiteman, Don

2005-01-01

The NASA Space-based Telemetry and Range Safety (STARS) program has developed and tested a low cost Ku-Band transmitter alternative for TDRSS applications based on an existing IRIG shaped offset quaternary phase shift keying (SOQPSK) transmitter. This paper presents information related to the implementation of this low cost system, as well as performance measurements of the alternative TDRSS transmitter system compared with an existing QPSK TDRSS transmitter.

Modified band alignment effect in ZnO/Cu2O heterojunction solar cells via Cs2O buffer insertion

NASA Astrophysics Data System (ADS)

Eom, Kiryung; Lee, Dongyoon; Kim, Seunghwan; Seo, Hyungtak

2018-02-01

The effects of a complex buffer layer of cesium oxide (Cs2O) on the photocurrent response in oxide heterojunction solar cells (HSCs) were investigated. A p-n junction oxide HSC was fabricated using p-type copper (I) oxide (Cu2O) and n-type zinc oxide (ZnO); the buffer layer was inserted between the Cu2O and fluorine-doped tin oxide (FTO). Ultraviolet-visible (UV-vis) and x-ray and ultraviolet photoelectron spectroscopy analyses were performed to characterize the electronic band structures of cells, both with and without this buffer layer. In conjunction with the measured band electronic structures, the significantly improved visible-range photocurrent spectra of the buffer-inserted HSC were analyzed in-depth. As a result, the 1 sun power conversion efficiency was increased by about three times by the insertion of buffer layer. The physicochemical origin of the photocurrent enhancement was mainly ascribed to the increased photocarrier density in the buffer layer and modified valence band offset to promote the effective hole transfer at the interface to FTO on the band-alignment model.

Hyperspectral Image Analysis for Skin Tumor Detection

NASA Astrophysics Data System (ADS)

Kong, Seong G.; Park, Lae-Jeong

This chapter presents hyperspectral imaging of fluorescence for nonin-vasive detection of tumorous tissue on mouse skin. Hyperspectral imaging sensors collect two-dimensional (2D) image data of an object in a number of narrow, adjacent spectral bands. This high-resolution measurement of spectral information reveals a continuous emission spectrum for each image pixel useful for skin tumor detection. The hyperspectral image data used in this study are fluorescence intensities of a mouse sample consisting of 21 spectral bands in the visible spectrum of wavelengths ranging from 440 to 640 nm. Fluorescence signals are measured using a laser excitation source with the center wavelength of 337 nm. An acousto-optic tunable filter is used to capture individual spectral band images at a 10-nm resolution. All spectral band images are spatially registered with the reference band image at 490 nm to obtain exact pixel correspondences by compensating the offsets caused during the image capture procedure. The support vector machines with polynomial kernel functions provide decision boundaries with a maximum separation margin to classify malignant tumor and normal tissue from the observed fluorescence spectral signatures for skin tumor detection.

17 CFR 204.33 - Pre-offset notice.

Code of Federal Regulations, 2014 CFR

2014-04-01

... employee to: (1) Disciplinary procedures appropriate under 5 U.S.C. chapter 75, 5 CFR part 752, or any... 17 Commodity and Securities Exchanges 3 2014-04-01 2014-04-01 false Pre-offset notice. 204.33... documented in the Commission's files (31 CFR 901.3(b)); (g) The employee's right to a hearing conducted by an...

Origin of negative resistance in anion migration controlled resistive memory

NASA Astrophysics Data System (ADS)

Banerjee, Writam; Wu, Facai; Hu, Yuan; Wu, Quantan; Wu, Zuheng; Liu, Qi; Liu, Ming

2018-03-01

Resistive random access memory (RRAM) is one of the most promising emerging nonvolatile technologies for the futuristic memory devices. Resistive switching behavior often shows negative resistance (NR), either voltage controlled or current controlled. In this work, the origin of a current compliance dependent voltage controlled NR effect during the resetting of anion migration based RRAM devices is discussed. The N-type voltage controlled NR is a high field driven phenomena. The current conduction within the range of a certain negative voltage is mostly dominated by space charge limited current. But with the higher negative voltage, a field induced tunneling effect is generated in the NR region. The voltage controlled NR is strongly dependent on the compliance current. The area independent behavior indicates the filamentary switching. The peak to valley ratio (PVR) is > 5. The variation of PVR as a function of the conduction band offset is achieved. Compared to other reported works, based on the PVR, it is possible to distinguish the RRAM types. Generally, due to the higher electric field effect on the metallic bridge during RESET, the electrochemical metallization type RRAM shows much higher PVR than the valance change type RRAM.

Design of a Wideband Radio Telescope

NASA Technical Reports Server (NTRS)

Imbriale, William A.; Weinreb, Sander; Mani, Handi

2007-01-01

A wideband Radio Telescope is being designed for use in the Goldstone Apple Valley Radio Telescope program. It uses an existing 34-meter antenna retrofitted with a tertiary offset mirror placed at the apex of the main reflector. It can be rotated to use two feeds that cover the 1.2 to 14 GHz band. The feed for 4.0 to 14.0 GHz is a cryogenically cooled commercially available open boundary quadridge horn from ETS-Lindgren. Coverage from 1.2 to 4.0 GHz is provided by an un-cooled scaled version of the same feed. The performance is greater than 40% over most of the band and greater than 55%from 6 to 13.5 GHz.

Revised radiometric calibration technique for LANDSAT-4 Thematic Mapper data

NASA Technical Reports Server (NTRS)

Murphy, J.; Butlin, T.; Duff, P.; Fitzgerald, A.

1984-01-01

Depending on detector number, there are random fluctuations in the background level for spectral band 1 of magnitudes ranging from 2 to 3.5 digital numbers (DN). Similar variability is observed in all the other reflective bands, but with smaller magnitude in the range 0.5 to 2.5 DN. Observations of background reference levels show that line dependent variations in raw TM image data and in the associated calibration data can be measured and corrected within an operational environment by applying simple offset corrections on a line-by-line basis. The radiometric calibration procedure defined by the Canadian Center for Remote Sensing was revised accordingly in order to prevent striping in the output product.

Electrical Characterization of GaSb Based Semiconductors for 2-4 micrometers Diode Laser Applications

DTIC Science & Technology

1996-06-01

to experience the dynamics of working with Jim Scofield whose knowledge seemed complementary to my own, providing an excellent sounding board to dig...111-2 Theoretical Aspects of Deep Level Energies and Capture Cross S ectio n s...111-37 Table 111-3. Summary of the theoretical estimates and experimental measurements of the valence band offset at the AlAs-GaAs heterointerface

Cross calibration of GF-1 satellite wide field of view sensor with Landsat 8 OLI and HJ-1A HSI

NASA Astrophysics Data System (ADS)

Liu, Li; Gao, Hailiang; Pan, Zhiqiang; Gu, Xingfa; Han, Qijin; Zhang, Xuewen

2018-01-01

This paper focuses on cross calibrating the GaoFen (GF-1) satellite wide field of view (WFV) sensor using the Landsat 8 Operational Land Imager (OLI) and HuanJing-1A (HJ-1A) hyperspectral imager (HSI) as reference sensors. Two methods are proposed to calculate the spectral band adjustment factor (SBAF). One is based on the HJ-1A HSI image and the other is based on ground-measured reflectance. However, the HSI image and ground-measured reflectance were measured at different dates, as the WFV and OLI imagers passed overhead. Three groups of regions of interest (ROIs) were chosen for cross calibration, based on different selection criteria. Cross-calibration gains with nonzero and zero offsets were both calculated. The results confirmed that the gains with zero offset were better, as they were more consistent over different groups of ROIs and SBAF calculation methods. The uncertainty of this cross calibration was analyzed, and the influence of SBAF was calculated based on different HSI images and ground reflectance spectra. The results showed that the uncertainty of SBAF was <3% for bands 1 to 3. Two other large uncertainties in this cross calibration were variation of atmosphere and low ground reflectance.

Localized surface plasmon resonance of nanotriangle dimers at different relative positions

NASA Astrophysics Data System (ADS)

Ren, Yatao; Qi, Hong; Chen, Qin; Wang, Shenling; Ruan, Liming

2017-09-01

The investigation of nanoparticle's optical properties is crucial for their biological and therapeutic applications. In the present work, a promising type of gold nanoparticle, the triangular prism which was reported to have multipolar surface plasmon peaks, was studied. The Plasmon ruler effect of nanotriangle dimers was observed and investigated for the first time. Well-defined trends of the extinction spectra maxima, which have a linear correlation with the triangle edge length, for lower order extinction corresponding to in-plane mode, were observed. On this basis, the optical property of nanotriangle dimers with different arrangements, including two nanotriangles aligned side-by-side, bottom-to-bottom, and in line, were studied. For the side-by-side arrangement, an additional peak was generated on the red shift side of the peak corresponding to dipole mode. When the distance between two prisms was scaled by the triangular side length, the relative plasmon shift can be approximated as an exponential function of the relative offset distance. Moreover, for dimers with nanotriangles arranged in line, there was a global blue shift of the extinction spectra with the approaching of two particles, including the higher order mode extinction. An interesting phenomenon was found for dimers with two nanotriangles aligned bottom-to-bottom. The resonance band split into two bands with the decreasing of the offset distance.

Thickness-dependent change in the valence band offset of the SiO{sub 2}/Si interface studied using synchrotron-radiation photoemission spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toyoda, S., E-mail: toyoda.satoshi.4w@kyoto-u.ac.jp; Oshima, M.

2016-08-28

We have studied the thickness-dependent change in the valence band offset (VBO) of the SiO{sub 2}/Si(001) interface using synchrotron-radiation photoemission spectroscopy with soft and hard X-rays. The SiO{sub 2}-film thickness (T{sub ox}) and X-ray irradiation time (t{sub irrad}) were systematically parameterized to distinguish between the “intrinsic” T{sub ox} effects in the VBOs and the “extrinsic” differential charging phenomena in SiO{sub 2} films on Si substrates. The results revealed that at a spontaneous time (t{sub irrad} ≈ 5 s) that suppresses the differential charging phenomena as much as possible, the experimental VBO abruptly increases as a function of T{sub ox} and graduallymore » saturates to the traditional VBO value range determined by the internal photoemission and photoconduction measurements. This effect is not attributed to the differential charging phenomena, but rather it is attributed to the “intrinsic” T{sub ox}-dependent change in the VBO. The two possible physical behaviors include electronic polarization and image charge. We have derived the electronic polarization contribution from experimental data by carefully describing the effects of the long-range image charges based on the classical dielectric-screening model.« less

Solid-solution Zn(O,S) thin films: Potential alternative buffer layer for Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Jani, Margi; Raval, Dhyey; Chavda, Arvind; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

This report investigates the alternative buffer material as Zn(O,S) for chalcogenide Cu2ZnSnS4 (CZTS) solar cell application. Using the band gap tailoring (band bowing) properties of Zn(O,S) system, performance of CZTS solar cell is explore in the present study. Reducing the band offsets with the hetero-junction partners plays a deterministic role in the performance of the device using Zn(O,S) as buffer layer. The experimental performance of the device with the CZTS/Zn(O,S) film developed by Spray pyrolysis method and analyze using J-V characterization in dark and illuminated configuration. Device with the best achievable performance shows Voc of 150 mV and Jsc of 0.47 mA/cm2 has been presented with the possibility of application in the energy harvesting.

Urban and regional planning proposal no. Y-10-066-001

NASA Technical Reports Server (NTRS)

Hannah, J. W.; Thomas, G. L. (Principal Investigator)

1973-01-01

There are no author-identified significant results in this report. A program has been completed to print out the radiance values for any specified combination of the four MSS bands for a specified sector of an image. A program to map intensities for any band is being written. An investigation of the characteristics of cities in the Brevard County area, as seen by ERTS-1, has been started. Investigation has not been completed, however, results initially obtained are presented. A Digicol viewer was used to determine the relative reflectance of cities (and other developed sectors) in the area. This was done by a combination of two methods: (1) varying the offset control so that the brightest spot appeared first, followed by the second brightest spot; and (2) reading the relative light transmissions at selected positions. A band 5 image was used and the results, in order of maximum reflectance apparent within the sector, are given.

Landsat-5 TM reflective-band absolute radiometric calibration

USGS Publications Warehouse

Chander, G.; Helder, D.L.; Markham, B.L.; Dewald, J.D.; Kaita, E.; Thome, K.J.; Micijevic, E.; Ruggles, T.A.

2004-01-01

The Landsat-5 Thematic Mapper (TM) sensor provides the longest running continuous dataset of moderate spatial resolution remote sensing imagery, dating back to its launch in March 1984. Historically, the radiometric calibration procedure for this imagery used the instrument's response to the Internal Calibrator (IC) on a scene-by-scene basis to determine the gain and offset of each detector. Due to observed degradations in the IC, a new procedure was implemented for U.S.-processed data in May 2003. This new calibration procedure is based on a lifetime radiometric calibration model for the instrument's reflective bands (1-5 and 7) and is derived, in part, from the IC response without the related degradation effects and is tied to the cross calibration with the Landsat-7 Enhanced Thematic Mapper Plus. Reflective-band absolute radiometric accuracy of the instrument tends to be on the order of 7% to 10%, based on a variety of calibration methods.

Evolution of lightning flash density and reflectivity structure in a multicell thunderstorm

NASA Technical Reports Server (NTRS)

Mazur, V.; Rust, W. D.; Gerlach, J. C.

1986-01-01

The radar reflectivity structure and the distribution of lightning in a storm cell was investigated using S-band and UHF-band radar data for six storm cells over Wallops Island. The S-band scans were vertical and continuous, while the UHF data were taken in steps of 2.5 deg elevation. The peak in lightning activity during the study corresponded to a merging of two storm cells. A minimum height of 7 km was found necessary for the appearance of a 40 dBZ core with lightning, which first appears in a multicell thunderstorm at the leading edge of the 50 dBZ core of the cell and between a cell and its decaying neighbor. The lightning moves further into the cell during cell decay and decreases in density. Finally, the lightning is offset horizontally from the precipitation core during cell growth but colocates with the precipitation core as the cell dissipates.

Emitter Choice for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2016-11-21

High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current andmore » lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.« less

Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures

NASA Astrophysics Data System (ADS)

Thiery, N.; Naletov, V. V.; Vila, L.; Marty, A.; Brenac, A.; Jacquot, J.-F.; de Loubens, G.; Viret, M.; Anane, A.; Cros, V.; Ben Youssef, J.; Beaulieu, N.; Demidov, V. E.; Divinskiy, B.; Demokritov, S. O.; Klein, O.

2018-02-01

We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of Eg≈2 eV. It drops to values about 5 ×103Ω cm at T =400 K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive (p type) at 5 cm2V-1sec-1 and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.

All-fiber bandpass filter based on asymmetrical modes exciting and coupling

NASA Astrophysics Data System (ADS)

Zhang, Qiang; Zhu, Tao; Shi, Leilei; Liu, Min

2013-01-01

A low cost all-fiber bandpass filter is demonstrated by fabricating an asymmetric long-period fiber grating (LPFG) in an off-set splicing fiber structure of two single mode fibers in this paper. The main principle of the filter is that the asymmetric LPFG written by single-side CO2 laser irradiation is used to couple the asymmetric cladding modes excited by the offset-coupling of the splicing point between the single mode fiber and the grating, and the left core mode of the splicing point cannot be coupled to the right fiber core, hence the interference effect is avoided. So the bandpass characteristics in the transmission spectrum are achieved. The designed filter exhibits a pass band at a central wavelength of 1565.0 nm with a full-width at half-maximum bandwidth of 12.3 nm.

Analysis of Unbound Aggregate Layer Deformation Behavior from Full Scale Aircraft Gear Loading with Wander

ERIC Educational Resources Information Center

Donovan, Phillip Raymond

2009-01-01

This study focuses on the analysis of the behavior of unbound aggregates to offset wheel loads. Test data from full-scale aircraft gear loading conducted at the National Airport Pavement Test Facility (NAPTF) by the Federal Aviation Administration (FAA) are used to investigate the effects of wander (offset loads) on the deformation behavior of…

Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

NASA Astrophysics Data System (ADS)

Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

2018-01-01

This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 < Δχ < 0.7, depends on bandgap. Our simulations examine various electron reflector layer materials and conclude the most suitable electron reflector layer for this real CIGS solar cells. ZnSnP2, CdSiAs2, GaAs, CdTe, Cu2ZnSnS4, InP, CuO, Pb10Ag3Sb11S28, CuIn5S8, SnS, PbCuSbS3, Cu3AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

On the Search for Mid-IR and Pure Rotational H3+ Emission in Jupiter's Northern Aurora

NASA Astrophysics Data System (ADS)

Trafton, Laurence M.; Miller, Steve; Lacy, John H.; Greathouse, Thomas K.

2017-06-01

The first identification of astronomical spectral emission from the H3+ ion was made in Jupiter’s southern auroral region in the first overtone band near 2 μm (Drossart et al. 1989; Nature 340, 539). Trafton et al. (1989; ApJ 343, L73) also detected H3+ emission from this band near each of Jupiter’s auroral poles, but without identifying it. Shortly thereafter, Maillard et al (1990; ApJ 363, L37) detected the fundamental band emission near 4 μm. In order to determine the non-LTE column abundance of H3+, which is Jupiter’s primary ionospheric coolant, we searched in 2001-2002, initially above 10 μm, for emission lines from the H3+ pure rotational and ν1 -> ν2 difference band. This was done near the northern auroral “hot spot” at System III longitude 180 deg based on predicted theoretical frequencies. The results were reported by Trafton et al. (2009; Icarus 203, 189). No pure rotational lines were detected but there were marginal detections of two metastable difference band lines. The IR-inactive ν1 levels are populated in thermal equilibrium so these difference band lines are proxies for the pure rotational lines in establishing the total H3+ column. These marginal results are consistent with a vibrational relaxation of the ν2 level by a factor of ~6, consistent with the non-LTE calculation of Melin et al. (2005; Icarus 178, 97).We report here results from subsequent observations of Jupiter’s H3+ hot spot spectrum below 10 μm, where better detectivity was expected from the lower thermal background. However, this was offset by the reduced availability of emission from known hydrocarbons, leading to acquisition and guiding difficulty, which was resolved by offsetting from a Galilean satellite. The observations were made with the TEXES high-resolution mid-IR spectrograph at the IRTF telescope on Oct 1, 6, and 8 of 2012. Of the 18 lines predicted for this wavelength regime, half avoided blending with lines apparent in Jupiter’s auroral spectrum or falling in spectral orders not observed. We again found no clear detection for the predicted frequencies, but marginal detections are suggested. We will compare the upper limits found here with the earlier results obtained above 10 μm.

Contractional deformation of porous sandstone: Insights from the Aztec Sandstone, SE Nevada, USA

NASA Astrophysics Data System (ADS)

Fossen, Haakon; Zuluaga, Luisa F.; Ballas, Gregory; Soliva, Roger; Rotevatn, Atle

2015-05-01

Contractional deformation of highly porous sandstones is poorly explored, as compared to extensional deformation of such sedimentary rocks. In this work we explore the highly porous Aztec Sandstone in the footwall to the Muddy Mountain thrust in SE Nevada, which contains several types of deformation bands in the Buffington tectonic window: 1) Distributed centimeter-thick shear-enhanced compaction bands (SECBs) and 2) rare pure compaction bands (PCBs) in the most porous parts of the sandstone, cut by 3) thin cataclastic shear-dominated bands (CSBs) with local slip surfaces. Geometric and kinematic analysis of the SECBs, the PCBs and most of the CSBs shows that they formed during ∼E-W (∼100) shortening, consistent with thrusting related to the Cretaceous to early Paleogene Sevier orogeny of the North American Cordilleran thrust system. Based on stress path modeling, we suggest that the compactional bands (PCBs and SECBs) formed during contraction at relatively shallow burial depths, before or at early stages of emplacement of the Muddy Mountains thrust sheet. The younger cataclastic shear bands (CSBs, category 3), also related to E-W Sevier thrusting, are thinner and show larger shear offsets and thus more intense cataclasis, consistent with the initiation of cataclastic shear bands in somewhat less porous materials. Observations made in this work support earlier suggestions that contraction lead to more distributed band populations than what is commonly found in the extensional regime, and that shear-enhanced compaction bands are widespread only where porosity (and permeability) is high.

VizieR Online Data Catalog: AS1063 and MACS1206-08 datacubes (Girard+, 2018)

NASA Astrophysics Data System (ADS)

Girard, M.; Dessauges-Zavadsky, M.; Schaerer, D.; Cirasuolo, M.; Turner, O. J.; Cava, A.; Rodriguez-Munoz, L.; Richard, J.; Perez-Gonzalez, P. G.

2018-06-01

We initiated KLENS in 2015 in P95 with the K band Multi Object Spectrograph (KMOS; Sharples et al., 2013Msngr.151...21S). KMOS has 24 arms of 14x14-spaxels. Each spaxel has 0.2"x0.2", which gives a global field of view of 2.8"x2.8" for each arm. Observations were carried out in the H and K bands, which have a typical spectral resolution of R~4000 and R~4200, respectively. Each pointing had an exposure time of 300s and we used an object-object-sky-object-object dither pattern. The sky frames were obtained by applying an offset to a clear sky position. The observations were taken in good conditions with a seeing around 0.6" in the H and K bands. The total on-source exposure time in the H band were 2.3h for both clusters. In the K band, the targets were observed during 8h and 10h on-source for MACS1206-08 and AS1063, respectively. Here are the reduced data fits files of the galaxies presented in the paper. (2 data files).

Computational Analyses of Offset Stream Nozzles for Noise Reduction

NASA Technical Reports Server (NTRS)

Dippold, Vance, III; Foster, Lancert; Wiese,Michael

2007-01-01

The Wind computational fluid dynamics code was used to perform a series of simulations on two offset stream nozzle concepts for jet noise reduction. The first concept used an S-duct to direct the secondary stream to the lower side of the nozzle. The second concept used vanes to turn the secondary flow downward. The analyses were completed in preparation of tests conducted in the NASA Glenn Research Center Aeroacoustic Propulsion Laboratory. The offset stream nozzles demonstrated good performance and reduced the amount of turbulence on the lower side of the jet plume. The computer analyses proved instrumental in guiding the development of the final test configurations and giving insight into the flow mechanics of offset stream nozzles. The computational predictions were compared with flowfield results from the jet rig testing and showed excellent agreement.

Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: Thickness scaling

NASA Astrophysics Data System (ADS)

Jain, Prateek; Rastogi, Priyank; Yadav, Chandan; Agarwal, Amit; Chauhan, Yogesh Singh

2017-07-01

The direct and indirect valleys in Germanium (Ge) are separated by a very small offset, which opens up the prospect of direct tunneling in the Γ valley of an extended Ge source tunnel field effect transistor (TFET). We explore the impact of thickness scaling of extended Ge source lateral TFET on the band to band tunneling (BTBT) current. The Ge source is extended inside the gate by 2 nm to confine the tunneling in Ge only. We observe that as the thickness is scaled, the band alignment at the Si/Ge heterojunction changes significantly, which results in an increase in Ge to Si BTBT current. Based on density functional calculations, we first obtain the band structure parameters (bandgap, effective masses, etc.) for the Ge and Si slabs of varying thickness, and these are then used to obtain the thickness dependent Kane's BTBT tunneling parameters. We find that electrostatics improves as the thickness is reduced in the ultra-thin Ge film ( ≤ 10 nm). The ON current degrades as we scale down in thickness; however, the subthreshold slope ( S S AVG ) improves remarkably with thickness scaling due to subsurface BTBT. We predict that 8 nm thin devices offer the best option for optimized ON current and S S AVG .

Enhanced Materials Based on Submonolayer Type-II Quantum Dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tamargo, Maria C; Kuskovsky, Igor L.; Meriles, Carlos

2017-04-15

We have investigated a nanostructured material known as sub-monolayer type-II QDs, made from wide bandgap II-VI semiconductors. Our goal is to understand and exploit their tunable optical and electrical properties by taking advantage of the type-II band alignment and quantum confinement effects. Type-II ZnTe quantum dots (QDs) in a ZnSe host are particularly interesting because of their relatively large valence band and conduction band offsets. In the current award we have developed new materials based on sub-monolayer type-II QDs that may be advantageous for photovoltaic and spintronics applications. We have also expanded the structural characterization of these materials by refiningmore » the X-ray diffraction methodologies needed to investigate them. In particular, we have 1) demonstrated ZnCdTe/ZnCdSe type-II QDs materials that have ideal properties for the development of novel high efficiency “intermediate band solar cells”, 2) we developed a comprehensive approach to describe and model the growth of these ultra-small type-II QDs, 3) analysis of the evolution of the photoluminescence (PL) emission, combined with other characterization probes allowed us to predict the size and density of the QDs as a function of the growth conditions, 4) we developed and implemented novel sophisticated X-ray diffraction techniques from which accurate size and shape of the buried type-II QDs could be extracted, 5) a correlation of the shape anisotropy with polarization dependent PL was observed, confirming the QDs detailed shape and providing insight about the effects of this shape anisotropy on the physical properties of the type-II QD systems, and 6) a detailed “time-resolved Kerr rotation” investigation has led to the demonstration of enhanced electron spin lifetimes for the samples with large densities of type-II QDs and an understanding of the interplay between the QDs and Te-isoelectroic centers, a defect that forms in the spacer layers that separate the QDs.« less

Exciton generation/dissociation/charge-transfer enhancement in inorganic/organic hybrid solar cells by robust single nanocrystalline LnPxOy (Ln = Eu, Y) doping.

PubMed

Jin, Xiao; Sun, Weifu; Chen, Zihan; Wei, Taihuei; Chen, Chuyang; He, Xingdao; Yuan, Yongbiao; Li, Yue; Li, Qinghua

2014-06-11

Low-temperature solution-processed photovoltaics suffer from low efficiencies because of poor exciton or electron-hole transfer. Inorganic/organic hybrid solar cell, although still in its infancy, has attracted great interest thus far. One of the promising ways to enhance exciton dissociation or electron-hole transport is the doping of lanthanide phosphate ions. However, the underlying photophysical mechanism remains poorly understood. Herein, by applying femtosecond transient absorption spectroscopy, we successfully distinguished hot electron, less energetic electron, hole transport from electron-hole recombination. Concrete evidence has been provided that lanthanide phosphate doping improves the efficiency of both hot electron and "less energetic" electron transfers from donor to acceptor, but the hole transport almost remains unchanged. In particular, the hot electron transfer lifetime was shortened from 30.2 to 12.7 ps, that is, more than 60% faster than pure TiO2 acceptor. Such improvement was ascribed to the facts that the conduction band (CB) edge energy level of TiO2 has been elevated by 0.2 eV, while the valence band level almost remains unchanged, thus not only narrowing the energy offset between CB levels of TiO2 and P3HT, but also meanwhile enlarging the band gap of TiO2 itself that permits one to inhibit electron-hole recombination within TiO2. Consequently, lanthanide phosphate doped TiO2/P3HT bulk-heterojunction solar cell has been demonstrated to be a promising hybrid solar cell, and a notable power conversion efficiency of 2.91% is therefore attained. This work indicates that lanthanide compound ions can efficiently facilitate exciton generation, dissociation, and charge transport, thus enhancing photovoltaic performance.

Heritage plaza parking lots improvement project- Solar PV installation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hooks, Todd

The Agua Caliente Band of Cahuilla Indians (ACBCI or the “Tribe”) installed a 79.95 kW solar photovoltaic (PV) system to offset the energy usage costs of the Tribal Education and Family Services offices located at the Tribe's Heritage Plaza office building, 90I Tahquitz Way, Palm Springs, CA, 92262 (the "Project"). The installation of the Solar PV system was part of the larger Heritage Plaza Parking Lot Improvements Project and mounted on the two southern carport shade structures. The solar PV system will offset 99% of the approximately 115,000 kWh in electricity delivered annually by Southern California Edison (SCE) to themore » Tribal Education and Family Services offices at Heritage Plaza, reducing their annual energy costs from approximately $22,000 annually to approximately $200. The total cost of the proposed solar PV system is $240,000.« less

Correlation between electronic structure and electron conductivity in MoX2 (X = S, Se, and Te)

NASA Astrophysics Data System (ADS)

Muzakir, Saifful Kamaluddin

2017-12-01

Layered structure molybdenum dichalcogenides, MoX2 (X = S, Se, and Te) are in focus as reversible charge storage electrode for pseudocapacitor applications. Correlation between number of layer and bandgap of the materials has been established by previous researchers. The correlation would reveal a connection between the bandgap and charge storage properties i.e., amount of charges that could be stored, and speed of storage or dissociation. In this work, fundamental parameters viz., (i) size-offset between a monolayer and exciton Bohr radius of MoX2 and (ii) ground and excited state electron density have been studied. We have identified realistic monolayer models of MoX2 using quantum chemical calculations which explain a correlation between size-offset and charge storage properties. We conclude that as the size-offset decreases, the higher possibility of wave functions overlap between the excited state, and ground state electrons; therefore the higher the electron mobility, and conductivity of the MoX2 would be.

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

NASA Astrophysics Data System (ADS)

Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

2018-04-01

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

Investigation of Maximum Blade Loading Capability of Lift-Offset Rotors

NASA Technical Reports Server (NTRS)

Yeo, Hyeonsoo; Johnson, Wayne

2013-01-01

Maximum blade loading capability of a coaxial, lift-offset rotor is investigated using a rotorcraft configuration designed in the context of short-haul, medium-size civil and military missions. The aircraft was sized for a 6600-lb payload and a range of 300 nm. The rotor planform and twist were optimized for hover and cruise performance. For the present rotor performance calculations, the collective pitch angle is progressively increased up to and through stall with the shaft angle set to zero. The effects of lift offset on rotor lift, power, controls, and blade airloads and structural loads are examined. The maximum lift capability of the coaxial rotor increases as lift offset increases and extends well beyond the McHugh lift boundary as the lift potential of the advancing blades are fully realized. A parametric study is conducted to examine the differences between the present coaxial rotor and the McHugh rotor in terms of maximum lift capabilities and to identify important design parameters that define the maximum lift capability of the rotor. The effects of lift offset on rotor blade airloads and structural loads are also investigated. Flap bending moment increases substantially as lift offset increases to carry the hub roll moment even at low collective values. The magnitude of flap bending moment is dictated by the lift-offset value (hub roll moment) but is less sensitive to collective and speed.

Iridium(iii) phosphorescent complexes with dual stereogenic centers: single crystal, electronic circular dichroism evidence and circularly polarized luminescence properties.

PubMed

Li, Tian-Yi; Zheng, You-Xuan; Zhou, Yong-Hui

2016-12-06

Iridium complexes with a chiral metal center and chiral carbons, Λ/Δ-(dfppy) 2 Ir(chty-R) and Λ/Δ-(dfppy) 2 Ir(chty-S), were synthesized and characterized. These isomers have the same steady-state photophysical properties, and obvious offsets in ECD spectra highlight both the chiral sources. Each enantiomeric couple shows mirror-image CPL bands with a dissymmetry factor in the order of 10 -3 .

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Microstrip Yagi Antenna with Dual Aperture-Coupled Feed

NASA Technical Reports Server (NTRS)

Pogorzelski, Ronald; Venkatesan, Jaikrishna

2008-01-01

A proposed microstrip Yagi antenna would operate at a frequency of 8.4 GHz (which is in the X band) and would feature a mechanically simpler, more elegant design, relative to a prior L-band microstrip Yagi antenna. In general, the purpose of designing a microstrip Yagi antenna is to combine features of a Yagi antenna with those of a microstrip patch to obtain an antenna that can be manufactured at low cost, has a low profile, and radiates a directive beam that, as plotted on an elevation plane perpendicular to the antenna plane, appears tilted away from the broadside. Such antennas are suitable for flush mounting on surfaces of diverse objects, including spacecraft, aircraft, land vehicles, and computers. Stated somewhat more precisely, what has been proposed is a microstrip antenna comprising an array of three Yagi elements. Each element would include four microstrip-patch Yagi subelements: one reflector patch, one driven patch, and two director patches. To obtain circular polarization, each driven patch would be fed by use of a dual offset aperture-coupled feed featuring bow-tie-shaped apertures. The selection of the dual offset bow-tie aperture geometry is supported by results found in published literature that show that this geometry would enable matching of the impedances of the driven patches to the 50-Omega impedance of the microstrip feedline while maintaining a desirably large front-to-back lobe ratio.

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

PubMed

Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

2015-03-11

The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms.

S-NPP VIIRS thermal emissive bands on-orbit calibration and performance

NASA Astrophysics Data System (ADS)

Efremova, Boryana; McIntire, Jeff; Moyer, David; Wu, Aisheng; Xiong, Xiaoxiong

2014-09-01

Presented is an assessment of the on-orbit radiometric performance of the thermal emissive bands (TEB) of the Suomi National Polar-orbiting Partnership (S-NPP) Visible Infrared Imaging Radiometer Suite (VIIRS) instrument based on data from the first 2 years of operations—from 20 January 2012 to 20 January 2014. The VIIRS TEB are calibrated on orbit using a V-grooved blackbody (BB) as a radiance source. Performance characteristics trended over the life of the mission include the F factor—a measure of the gain change of the TEB detectors; the Noise Equivalent differential Temperature (NEdT)—a measure of the detector noise; and the detector offset and nonlinear terms trended at the quarterly performed BB warm-up cool-down cycles. We find that the BB temperature is well controlled and stable within the 30mK requirement. The F factor trends are very stable and showing little degradation (within 0.8%). The offsets and nonlinearity terms are also without noticeable drifts. NEdT is stable and does not show any trend. Other TEB radiometric calibration-related activities discussed include the on-orbit assessment of the response versus scan-angle functions and an approach to improve the M13 low-gain calibration using onboard lunar measurements. We conclude that all the assessed parameters comply with the requirements, and the TEB provide radiometric measurements with the required accuracy.

First principles based multiparadigm modeling of electronic structures and dynamics

NASA Astrophysics Data System (ADS)

Xiao, Hai

Electronic structures and dynamics are the key to linking the material composition and structure to functionality and performance. An essential issue in developing semiconductor devices for photovoltaics is to design materials with optimal band gaps and relative positioning of band levels. Approximate DFT methods have been justified to predict band gaps from KS/GKS eigenvalues, but the accuracy is decisively dependent on the choice of XC functionals. We show here for CuInSe2 and CuGaSe2, the parent compounds of the promising CIGS solar cells, conventional LDA and GGA obtain gaps of 0.0-0.01 and 0.02-0.24 eV (versus experimental values of 1.04 and 1.67 eV), while the historically first global hybrid functional, B3PW91, is surprisingly the best, with band gaps of 1.07 and 1.58 eV. Furthermore, we show that for 27 related binary and ternary semiconductors, B3PW91 predicts gaps with a MAD of only 0.09 eV, which is substantially better than all modern hybrid functionals, including B3LYP (MAD of 0.19 eV) and screened hybrid functional HSE06 (MAD of 0.18 eV). The laboratory performance of CIGS solar cells (> 20% efficiency) makes them promising candidate photovoltaic devices. However, there remains little understanding of how defects at the CIGS/CdS interface affect the band offsets and interfacial energies, and hence the performance of manufactured devices. To determine these relationships, we use the B3PW91 hybrid functional of DFT with the AEP method that we validate to provide very accurate descriptions of both band gaps and band offsets. This confirms the weak dependence of band offsets on surface orientation observed experimentally. We predict that the CBO of perfect CuInSe2/CdS interface is large, 0.79 eV, which would dramatically degrade performance. Moreover we show that band gap widening induced by Ga adjusts only the VBO, and we find that Cd impurities do not significantly affect the CBO. Thus we show that Cu vacancies at the interface play the key role in enabling the tunability of CBO. We predict that Na further improves the CBO through electrostatically elevating the valence levels to decrease the CBO, explaining the observed essential role of Na for high performance. Moreover we find that K leads to a dramatic decrease in the CBO to 0.05 eV, much better than Na. We suggest that the efficiency of CIGS devices might be improved substantially by tuning the ratio of Na to K, with the improved phase stability of Na balancing phase instability from K. All these defects reduce interfacial stability slightly, but not significantly. A number of exotic structures have been formed through high pressure chemistry, but applications have been hindered by difficulties in recovering the high pressure phase to ambient conditions (i.e., one atmosphere and room temperature). Here we use dispersion-corrected DFT (PBE-ulg flavor) to predict that above 60 GPa the most stable form of N2O (the laughing gas in its molecular form) is a 1D polymer with an all-nitrogen backbone analogous to cis-polyacetylene in which alternate N are bonded (ionic covalent) to O. The analogous trans-polymer is only 0.03-0.10 eV/molecular unit less stable. Upon relaxation to ambient conditions both polymers relax below 14 GPa to the same stable non-planar trans-polymer, accompanied by possible electronic structure transitions. The predicted phonon spectrum and dissociation kinetics validate the stability of this trans-poly-NNO at ambient conditions, which has potential applications as a new type of conducting polymer with all-nitrogen chains and as a high-energy oxidizer for rocket propulsion. This work illustrates in silico materials discovery particularly in the realm of extreme conditions. Modeling non-adiabatic electron dynamics has been a long-standing challenge for computational chemistry and materials science, and the eFF method presents a cost-efficient alternative. However, due to the deficiency of FSG representation, eFF is limited to low-Z elements with electrons of predominant s-character. To overcome this, we introduce a formal set of ECP extensions that enable accurate description of p-block elements. The extensions consist of a model representing the core electrons with the nucleus as a single pseudo particle represented by FSG, interacting with valence electrons through ECPs. We demonstrate and validate the ECP extensions for complex bonding structures, geometries, and energetics of systems with p-block character (C, O, Al, Si) and apply them to study materials under extreme mechanical loading conditions. Despite its success, the eFF framework has some limitations, originated from both the design of Pauli potentials and the FSG representation. To overcome these, we develop a new framework of two-level hierarchy that is a more rigorous and accurate successor to the eFF method. (Abstract shortened by UMI.).

Summary Findings of Pilot Studies Conducted by the Interagency Coastal Wetlands Workgroup

EPA Pesticide Factsheets

The ICWWG conducted studies in coastal watersheds to better understand coastal wetland loss. Identified drivers, such as development pressure, drainage practices, and insufficient restore wetland acres to offset acres lost. Provides some recommendations.

Performance of WPA Conductivity Sensor during Two-Phase Fluid Flow in Microgravity

NASA Technical Reports Server (NTRS)

Carter, Layne; O'Connor, Edward W.; Snowdon, Doug

2003-01-01

The Conductivity Sensor designed for use in the Node 3 Water Processor Assembly (WPA) was based on the existing Space Shuttle application for the fuel cell water system. However, engineering analysis has determined that this sensor design is potentially sensitive to two-phase fluid flow (gadliquid) in microgravity. The source for this sensitivity is the fact that gas bubbles will become lodged between the sensor probe and the wall of the housing without the aid of buoyancy in l-g. Once gas becomes lodged in the housing, the measured conductivity will be offset based on the volume of occluded gas. A development conductivity sensor was flown on the NASA Microgravity Plan to measure the offset, which was determined to range between 0 and 50%. Based on these findings, a development program was initiated at the sensor s manufacturer to develop a sensor design fully compatible with two-phase fluid flow in microgravity.

Parametric study in weld mismatch of longitudinally welded SSME HPFTP inlet

NASA Technical Reports Server (NTRS)

Min, J. B.; Spanyer, K. L.; Brunair, R. M.

1991-01-01

Welded joints are an essential part of pressure vessels such as the Space Shuttle Main Engine (SSME) Turbopumps. Defects produced in the welding process can be detrimental to weld performance. Recently, review of the SSME high pressure fuel turbopump (HPFTP) titanium inlet x rays revealed several weld discrepancies such as penetrameter density issues, film processing discrepancies, weld width discrepancies, porosity, lack of fusion, and weld offsets. Currently, the sensitivity of welded structures to defects is of concern. From a fatigue standpoint, weld offset may have a serious effect since local yielding, in general, aggravates cyclic stress effects. Therefore, the weld offset issue is considered. Using the finite element method and mathematical formulations, parametric studies were conducted to determine the influence of weld offsets and a variation of weld widths in longitudinally welded cylindrical structures with equal wall thickness on both sides of the joint. From the study, the finite element results and theoretical solutions are presented.

Characterization and Mitigation of Resistive Losses in a Large Area Laser Power Converter

DTIC Science & Technology

2014-03-27

level lies between the valence and conduction band such that relatively few electrons are thermally excited into the conduction band. Pure crystalline...have an equal number of electrons in the conduction band and holes in the valence band when it is in thermal equilibrium. That is, the electron...easily be thermally excited into the conduction band and act as a mobile charge carrier within the material, now considered n-type for it contains a

Analysis of deformation bands in the Aztec Sandstone, Valley of Fire State Park, Nevada

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hill, R.E.

1993-04-01

This research concerns two types of deformation structures, deformation bands and low-angle slip surfaces, that occur in the Aztec Sandstone in the Valley of Fire State Park, Nevada. Deformation bands were analyzed by mapping and describing over 500 of the structures on a bedding surface of about 560 square meters. Deformation bands are narrow zones of reduced porosity which form resistant ribs in the sandstone. Three sets of deformation bands are present at the study site (type 1,2, and 3). Type 1 and 2 bands are interpreted as coeval and form a conjugate set with a dihedral angle of 90more » degrees. These sets are usually composed of multiple bands. A third set is interpreted to be subsidiary to the older set, and intersections angles with the earlier formed sets are approximately 45 degrees. In contrast with the older sets, the third set is nearly always a single band which is sinuous or jagged along its length. All three sets of deformation bands are crosscut and sometimes offset by low-angle slip surfaces. These faults have reverse dip slip displacement and locally have mullions developed. Displacements indicate eastward movement of the hanging wall which is consistent with the inferred movements of major Mesozoic thrust faults in the vicinity. The change of deformation style from deformation bands to low-angle slip surfaces may document a change in the stress regime. Paleostress interpretation of the deformation band geometry indicates the intermediate stress axis is vertical. The low-angle slip surfaces indicate the least compressive stress axis is vertical. This possible change in stress axes may be the result of increasing pore pressure associated with tectonic loading from emplacement of the Muddy Mountain thrust.« less

Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness

NASA Astrophysics Data System (ADS)

Jegert, Gunther; Kersch, Alfred; Weinreich, Wenke; Lugli, Paolo

2011-01-01

In this paper, we investigate the influence of electrode roughness on the leakage current in TiN/high-κ ZrO2/TiN (TZT) thin-film capacitors which are used in dynamic random access memory cells. Based on a microscopic transport model, which is expanded to incorporate electrode roughness, we assess the ultimate scaling potential of TZT capacitors in terms of equivalent oxide thickness, film smoothness, thickness fluctuations, defect density and distribution, and conduction band offset (CBO). The model is based on three-dimensional, fully self-consistent, kinetic Monte Carlo transport simulations. Tunneling transport in the bandgap of the dielectric is treated, which includes defect-assisted transport mechanisms. Electrode roughness is described in the framework of fractal geometry. While the short-range roughness of the electrodes is found not to influence significantly the leakage current, thickness fluctuations of the dielectric have a major impact. For thinner dielectric films they cause a transformation of the dominant transport mechanism from Poole-Frenkel conduction to trap-assisted tunneling. Consequently, the sensitivity of the leakage current on electrode roughness drastically increases on downscaling. Based on the simulations, optimization of the CBO is suggested as the most viable strategy to extend the scalability of TZT capacitors over the next chip generations.

A C-band broadband ortho-mode transducer for radioastronomy polarimetry.

PubMed

Ferreira, Ivan S; Tello, Camilo; Bergano, Miguel; Villela, Thyrso; Barbosa, Domingos; Smoot, George F

2016-01-01

We describe the design, the construction and performance of a narrow band ortho-mode transducer, currently used in the 5 GHz polarimetric receiver of the Galactic Emission Mapping project. The ortho-mode transducer was designed to achieve a high degree of transmission within the 400 MHz of the GEM band around the 5 GHz (4.8-5.2 GHz). It is composed of a circular-to-square waveguide transition, a septum polarizer, a thin waveguide coupler and a smooth square-to-rectangular waveguide transition with custom waveguide bends to the output ports. Our simulations and measurements show a very low level of cross-polarization of about -60 dB and a good impedance match for all three ports (S11; S22; S33 < -30 dB) with only 0:25 dB of insertion loss offset across the 400 MHz (4.8-5.2 GHz) of the reception bandwidth.

Day-Scale Variability of 3C 279 and Searches for Correlations in Gamma-Ray, X-Ray and Optical Bands

NASA Technical Reports Server (NTRS)

Hartman, R. C.; Villata, M.; Balonek, T. J.; Bertsch, D. L.; Bock, H.; Boettcher, M.; Carini, M. T.; Collmar, W.; DeFrancesco, G.; Ferrera, E. C.;

SEMICONDUCTOR INTEGRATED CIRCUITS 8.64-11.62 GHz CMOS VCO and divider in a zero-IF 802.11a/b/g WLAN and Bluetooth application

NASA Astrophysics Data System (ADS)

Yu, Sun; Niansong, Mei; Bo, Lu; Yumei, Huang; Zhiliang, Hong

2010-10-01

A fully integrated VCO and divider implemented in SMIC 0.13-μm RFCMOS 1P8M technology with a 1.2 V supply voltage is presented. The frequency of the VCO is tuning from 8.64 to 11.62 GHz while the quadrature LO signals for 802.11a WLAN in 5.8 GHz band or for 802.11b/g WLAN and Bluetooth in 2.4 GHz band can be obtained by a frequency division by 2 or 4, respectively. A 6 bit switched capacitor array is applied for precise tuning of all necessary frequency bands. The testing results show that the VCO has a phase noise of—113 dBc @ 1 MHz offset from the carrier of 5.5 GHz by dividing VCO output by two and the VCO core consumes 3.72 mW. The figure-of-merit for the tuning-range (FOMT) of the VCO is -192.6 dBc/Hz.

Study of spectral/radiometric characteristics of the Thematic Mapper for land use applications

NASA Technical Reports Server (NTRS)

Malila, W. A.; Metzler, M. D. (Principal Investigator)

1985-01-01

Progress during ERIM's tenth quarter of effort under the LANDSAT-4 and 5 Image Data Quality Assessment program for the Thematic Mapper is described. Coincident LANDSAT-4 and 5 fully corrected (CCT-PT) TM data are analyzed in more detail and revised band-by-band relationships between the two sensors derived. An analysis technique employing the matching of cumulative distributions is developed and used and is believed to offer advantages over the histogram matching procedure currently used to produce LANDSAT data. Multiplicative factors ranging from 0.987 to 1.145 and offsets ranging from -2.7 to -6.2 video quantum levels are required to cause LANDSAT-5 data to match LANDSAT-4 data values. Evidence of low level clipping is found in TM Bands 5 and 7 of LANDSAT-5 but not LANDSAT-4. Analysis of the information content of LANDSAT TM and MSS data is continued. Components of information loss are identified and quantified and the effects of coarsened quantization are explored.

Versatile silicon-waveguide supercontinuum for coherent mid-infrared spectroscopy

NASA Astrophysics Data System (ADS)

Nader, Nima; Maser, Daniel L.; Cruz, Flavio C.; Kowligy, Abijith; Timmers, Henry; Chiles, Jeff; Fredrick, Connor; Westly, Daron A.; Nam, Sae Woo; Mirin, Richard P.; Shainline, Jeffrey M.; Diddams, Scott

2018-03-01

Laser frequency combs, with their unique combination of precisely defined spectral lines and broad bandwidth, are a powerful tool for basic and applied spectroscopy. Here, we report offset-free, mid-infrared frequency combs and dual-comb spectroscopy through supercontinuum generation in silicon-on-sapphire waveguides. We leverage robust fabrication and geometrical dispersion engineering of nanophotonic waveguides for multi-band, coherent frequency combs spanning 70 THz in the mid-infrared (2.5 μm-6.2 μm). Precise waveguide fabrication provides significant spectral broadening with engineered spectra targeted at specific mid-infrared bands. We characterize the relative-intensity-noise of different bands and show that the measured levels do not pose any limitation for spectroscopy applications. Additionally, we use the fabricated photonic devices to demonstrate dual-comb spectroscopy of a carbonyl sulfide gas sample at 5 μm. This work forms the technological basis for applications such as point sensors for fundamental spectroscopy, atmospheric chemistry, trace and hazardous gas detection, and biological microscopy.

A High Frequency Active Voltage Doubler in Standard CMOS Using Offset-Controlled Comparators for Inductive Power Transmission

PubMed Central

Lee, Hyung-Min; Ghovanloo, Maysam

2014-01-01

In this paper, we present a fully integrated active voltage doubler in CMOS technology using offset-controlled high speed comparators for extending the range of inductive power transmission to implantable microelectronic devices (IMD) and radio-frequency identification (RFID) tags. This active voltage doubler provides considerably higher power conversion efficiency (PCE) and lower dropout voltage compared to its passive counterpart and requires lower input voltage than active rectifiers, leading to reliable and efficient operation with weakly coupled inductive links. The offset-controlled functions in the comparators compensate for turn-on and turn-off delays to not only maximize the forward charging current to the load but also minimize the back current, optimizing PCE in the high frequency (HF) band. We fabricated the active voltage doubler in a 0.5-μm 3M2P std. CMOS process, occupying 0.144 mm2 of chip area. With 1.46 V peak AC input at 13.56 MHz, the active voltage doubler provides 2.4 V DC output across a 1 kΩ load, achieving the highest PCE = 79% ever reported at this frequency. In addition, the built-in start-up circuit ensures a reliable operation at lower voltages. PMID:23853321

Cross-calibration of S-NPP VIIRS moderate-resolution reflective solar bands against MODIS Aqua over dark water scenes

NASA Astrophysics Data System (ADS)

Sayer, Andrew M.; Hsu, N. Christina; Bettenhausen, Corey; Holz, Robert E.; Lee, Jaehwa; Quinn, Greg; Veglio, Paolo

2017-04-01

The Visible Infrared Imaging Radiometer Suite (VIIRS) is being used to continue the record of Earth Science observations and data products produced routinely from National Aeronautics and Space Administration (NASA) Moderate Resolution Imaging Spectroradiometer (MODIS) measurements. However, the absolute calibration of VIIRS's reflected solar bands is thought to be biased, leading to offsets in derived data products such as aerosol optical depth (AOD) as compared to when similar algorithms are applied to different sensors. This study presents a cross-calibration of these VIIRS bands against MODIS Aqua over dark water scenes, finding corrections to the NASA VIIRS Level 1 (version 2) reflectances between approximately +1 and -7 % (dependent on band) are needed to bring the two into alignment (after accounting for expected differences resulting from different band spectral response functions), and indications of relative trending of up to ˜ 0.35 % per year in some bands. The derived calibration gain corrections are also applied to the VIIRS reflectance and then used in an AOD retrieval, and they are shown to decrease the bias and total error in AOD across the mid-visible spectral region compared to the standard VIIRS NASA reflectance calibration. The resulting AOD bias characteristics are similar to those of NASA MODIS AOD data products, which is encouraging in terms of multi-sensor data continuity.

The Effect of Temporal Perception on Weight Perception

PubMed Central

Kambara, Hiroyuki; Shin, Duk; Kawase, Toshihiro; Yoshimura, Natsue; Akahane, Katsuhito; Sato, Makoto; Koike, Yasuharu

2013-01-01

A successful catch of a falling ball requires an accurate estimation of the timing for when the ball hits the hand. In a previous experiment in which participants performed ball-catching task in virtual reality environment, we accidentally found that the weight of a falling ball was perceived differently when the timing of ball load force to the hand was shifted from the timing expected from visual information. Although it is well known that spatial information of an object, such as size, can easily deceive our perception of its heaviness, the relationship between temporal information and perceived heaviness is still not clear. In this study, we investigated the effect of temporal factors on weight perception. We conducted ball-catching experiments in a virtual environment where the timing of load force exertion was shifted away from the visual contact timing (i.e., time when the ball hit the hand in the display). We found that the ball was perceived heavier when force was applied earlier than visual contact and lighter when force was applied after visual contact. We also conducted additional experiments in which participants were conditioned to one of two constant time offsets prior to testing weight perception. After performing ball-catching trials with 60 ms advanced or delayed load force exertion, participants’ subjective judgment on the simultaneity of visual contact and force exertion changed, reflecting a shift in perception of time offset. In addition, timing of catching motion initiation relative to visual contact changed, reflecting a shift in estimation of force timing. We also found that participants began to perceive the ball as lighter after conditioning to 60 ms advanced offset and heavier after the 60 ms delayed offset. These results suggest that perceived heaviness depends not on the actual time offset between force exertion and visual contact but on the subjectively perceived time offset between them and/or estimation error in force timing. PMID:23450805

Common-midpoint radar surveys of ice sheets: a tool for better ice and bed property inversions

NASA Astrophysics Data System (ADS)

Holschuh, N.; Christianson, K.; Anandakrishnan, S.; Alley, R. B.; Jacobel, R. W.

2016-12-01

In response to the demand for observationally derived boundary conditions in ice-sheet models, geophysicists are striving to more quantitatively interpret the reflection amplitudes of ice penetrating radar data. Inversions for ice-flow parameters and basal properties typically use common-offset radar data, which contain a single observation of bed reflection amplitude at each location in the survey; however, the radar equation has more than one unknown - ice temperature, subglacial water content, and bedrock roughness cannot be uniquely determined without additional constraints. In this study, we adapt traditional seismic property inversion techniques to radar data, using additional information collected with a common-midpoint (CMP) radar survey geometry (which varies the source-receiver offset for each subsurface target). Using two of the first common-midpoint ice-penetrating radar data sets collected over thick ice in Antarctica and Greenland, we test the hypothesis that these data can be used to disentangle the contributions of ice conductivity and bed permittivity to the received reflection amplitudes. We focus specifically on the corrections for the angular dependence of antenna gain and surface reflectivity, refractive focusing effects, and surface scattering losses. Inferred temperature profiles, derived from the constrained ice conductivities at Kamb Ice Stream and the North East Greenland Ice Stream, suggest higher than expected depth-integrated temperatures, as well as non-physical depth trends (with elevated temperatures near the surface). We hypothesize that this is driven in part by offset-dependent interferences between the sub-wavelength layers that make up a single nadir reflection, and present a convolutional model that describes how this interference might systematically reduce reflection power with offset (thereby elevating the inferred attenuation rate). If these additional offset-dependent power losses can be isolated and removed, common-midpoint profiles could provide a promising new way to calibrate property inversions that use the more laterally extensive, airborne, common-offset radar surveys.

Effects of Conductor Expressivity on Secondary School Band Members' Performance and Attitudes toward Conducting

ERIC Educational Resources Information Center

Silvey, Brian A.; Koerner, Bryan D.

2016-01-01

We investigated the effects of expressive and unexpressive conducting on secondary school band members' and experts' audio evaluations of band performance expressivity. A conductor, who demonstrated either expressive or unexpressive conducting techniques, led both an eighth-grade and a high school band in four separate "run-throughs" of…

Imaging an 80 au radius dust ring around the F5V star HD 157587

DOE Office of Scientific and Technical Information (OSTI.GOV)

Millar-Blanchaer, Maxwell A.; Wang, Jason J.; Kalas, Paul

Here, we present H-band near-infrared polarimetric imaging observations of the F5V star HD 157587 obtained with the Gemini Planet Imager (GPI) that reveal the debris disk as a bright ring structure at a separation of ~80–100 au. The new GPI data complement recent Hubble Space Telescope /STIS observations that show the disk extending out to over 500 au. The GPI image displays a strong asymmetry along the projected minor axis as well as a fainter asymmetry along the projected major axis. We associate the minor and major axis asymmetries with polarized forward scattering and a possible stellocentric offset, respectively. Tomore » constrain the disk geometry, we fit two separate disk models to the polarized image, each using a different scattering phase function. Both models favor a disk inclination of ~70° and a 1.5 ± 0.6 au stellar offset in the plane of the sky along the projected major axis of the disk. We find that the stellar offset in the disk plane, perpendicular to the projected major axis is degenerate with the form of the scattering phase function and remains poorly constrained. The disk is not recovered in total intensity due in part to strong adaptive optics residuals, but we recover three point sources. Considering the system's proximity to the galactic plane and the point sources' positions relative to the disk, we consider it likely that they are background objects and unrelated to the disk's offset from the star.« less

IMAGING AN 80 au RADIUS DUST RING AROUND THE F5V STAR HD 157587

DOE Office of Scientific and Technical Information (OSTI.GOV)

Millar-Blanchaer, Maxwell A.; Moon, Dae-Sik; Wang, Jason J.

2016-11-01

We present H -band near-infrared polarimetric imaging observations of the F5V star HD 157587 obtained with the Gemini Planet Imager (GPI) that reveal the debris disk as a bright ring structure at a separation of ∼80–100 au. The new GPI data complement recent Hubble Space Telescope /STIS observations that show the disk extending out to over 500 au. The GPI image displays a strong asymmetry along the projected minor axis as well as a fainter asymmetry along the projected major axis. We associate the minor and major axis asymmetries with polarized forward scattering and a possible stellocentric offset, respectively. To constrainmore » the disk geometry, we fit two separate disk models to the polarized image, each using a different scattering phase function. Both models favor a disk inclination of ∼70° and a 1.5 ± 0.6 au stellar offset in the plane of the sky along the projected major axis of the disk. We find that the stellar offset in the disk plane, perpendicular to the projected major axis is degenerate with the form of the scattering phase function and remains poorly constrained. The disk is not recovered in total intensity due in part to strong adaptive optics residuals, but we recover three point sources. Considering the system’s proximity to the galactic plane and the point sources’ positions relative to the disk, we consider it likely that they are background objects and unrelated to the disk’s offset from the star.« less

Imaging an 80 au radius dust ring around the F5V star HD 157587

DOE PAGES

Millar-Blanchaer, Maxwell A.; Wang, Jason J.; Kalas, Paul; ...

2016-10-21

Here, we present H-band near-infrared polarimetric imaging observations of the F5V star HD 157587 obtained with the Gemini Planet Imager (GPI) that reveal the debris disk as a bright ring structure at a separation of ~80–100 au. The new GPI data complement recent Hubble Space Telescope /STIS observations that show the disk extending out to over 500 au. The GPI image displays a strong asymmetry along the projected minor axis as well as a fainter asymmetry along the projected major axis. We associate the minor and major axis asymmetries with polarized forward scattering and a possible stellocentric offset, respectively. Tomore » constrain the disk geometry, we fit two separate disk models to the polarized image, each using a different scattering phase function. Both models favor a disk inclination of ~70° and a 1.5 ± 0.6 au stellar offset in the plane of the sky along the projected major axis of the disk. We find that the stellar offset in the disk plane, perpendicular to the projected major axis is degenerate with the form of the scattering phase function and remains poorly constrained. The disk is not recovered in total intensity due in part to strong adaptive optics residuals, but we recover three point sources. Considering the system's proximity to the galactic plane and the point sources' positions relative to the disk, we consider it likely that they are background objects and unrelated to the disk's offset from the star.« less

Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sergent, S.; Kako, S.; Bürger, M.

2014-10-06

We study by microphotoluminescence the optical properties of single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. We show evidences of both excitonic and multiexcitonic recombinations in individual quantum dots with radiative lifetimes shorter than 287 ± 8 ps. Owing to large band offsets and a large exciton binding energy, the excitonic recombinations of single zinc-blende GaN/AlN quantum dots can be observed up to 300 K.

Novel High Speed Devices and Heterostructures Prepared by Molecular Beam Epitaxy

DTIC Science & Technology

1989-02-13

GaSb/GaAs system was reported from the results of photoreflectance measurements : w ereport a heavy-hole band offset s5; 1.7 for GaAs.g9bd.,, establishing...studied by variable temperature Hall measurements . For the GaA# 1_hb# material grown on InP, a two-acceptor model was forwarded to describe the Hall...Meanwhile, from Hall measurements , room temperature electron mobilities as high as 57000 m./Vs were reported in a 4.6 & thick unintentionally-doped InSb

Small Business Innovation Research (SBIR) Program, FY 1993. Program Solicitation 93.1, Closing Date: 15 January 1993

DTIC Science & Technology

1992-01-01

tactical computers. The module must correct for optical irregularities in illumination, pixel gain, offset nonuniformities due to dark currents and...large search FOR, for IR FPA. DESCRIPTION: Large area staring IR lPAs in both Medium Wavelength Infrared (MWIR) and Long Wavelength Infrared ( LWIR ) are a...of HTS materials to BLIP limited detection of radiation in the optical, IR, MWIR, and LWIR bands as well as for signal processing applications is also

Landsat-4 and Landsat-5 thematic mapper band 6 historical performance and calibration

USGS Publications Warehouse

Barsi, J.A.; Chander, G.; Markham, B.L.; Higgs, N.; ,

2005-01-01

Launched in 1982 and 1984 respectively, the Landsat-4 and -5 Thematic Mappers (TM) are the backbone of an extensive archive of moderate resolution Earth imagery. However, these sensors and their data products were not subjected to the type of intensive monitoring that has been part of the Landsat-7 system since its launch in 1999. With Landsat-4's 11 year and Landsat-5's 20+ year data record, there is a need to understand the historical behavior of the instruments in order to verify the scientific integrity of the archive and processed products. Performance indicators of the Landsat-4 and -5 thermal bands have recently been extracted from a processing system database allowing for a more complete study of thermal band characteristics and calibration than was previously possible. The database records responses to the internal calibration system, instrument temperatures and applied gains and offsets for each band for every scene processed through the National Landsat Archive Production System (NLAPS). Analysis of this database has allowed for greater understanding of the calibration and improvement in the processing system. This paper will cover the trends in the Landsat-4 and -5 thermal bands, the effect of the changes seen in the trends, and how these trends affect the use of the thermal data.

Redox artifacts in electrophysiological recordings

PubMed Central

Berman, Jonathan M.

2013-01-01

Electrophysiological techniques make use of Ag/AgCl electrodes that are in direct contact with cells or bath. In the bath, electrodes are exposed to numerous experimental conditions and chemical reagents that can modify electrode voltage. We examined voltage offsets created in Ag/AgCl electrodes by exposure to redox reagents used in electrophysiological studies. Voltage offsets were measured in reference to an electrode separated from the solution by an agar bridge. The reducing reagents Tris-2-carboxyethly-phosphine, dithiothreitol (DTT), and glutathione, as well as the oxidizing agent H2O2 used at experimentally relevant concentrations reacted with Ag in the electrodes to produce voltage offsets. Chloride ions and strong acids and bases produced offsets at millimolar concentrations. Electrolytic depletion of the AgCl layer, to replicate voltage clamp and sustained use, resulted in increased sensitivity to flow and DTT. Offsets were sensitive to electrode silver purity and to the amount and method of chloride deposition. For example, exposure to 10 μM DTT produced a voltage offset between 10 and 284 mV depending on the chloride deposition method. Currents generated by these offsets are significant and dependent on membrane conductance and by extension the expression of ion channels and may therefore appear to be biological in origin. These data demonstrate a new source of artifacts in electrophysiological recordings that can affect measurements obtained from a variety of experimental techniques from patch clamp to two-electrode voltage clamp. PMID:23344161

Design of optimal buffer layers for CuInGaSe2 thin-film solar cells(Conference Presentation)

NASA Astrophysics Data System (ADS)

Lordi, Vincenzo; Varley, Joel B.; He, Xiaoqing; Rockett, Angus A.; Bailey, Jeff; Zapalac, Geordie H.; Mackie, Neil; Poplavskyy, Dmitry; Bayman, Atiye

2016-09-01

Optimizing the buffer layer in manufactured thin-film PV is essential to maximize device efficiency. Here, we describe a combined synthesis, characterization, and theory effort to design optimal buffers based on the (Cd,Zn)(O,S) alloy system for CIGS devices. Optimization of buffer composition and absorber/buffer interface properties in light of several competing requirements for maximum device efficiency were performed, along with process variations to control the film and interface quality. The most relevant buffer properties controlling performance include band gap, conduction band offset with absorber, dopability, interface quality, and film crystallinity. Control of an all-PVD deposition process enabled variation of buffer composition, crystallinity, doping, and quality of the absorber/buffer interface. Analytical electron microscopy was used to characterize the film composition and morphology, while hybrid density functional theory was used to predict optimal compositions and growth parameters based on computed material properties. Process variations were developed to produce layers with controlled crystallinity, varying from amorphous to fully epitaxial, depending primarily on oxygen content. Elemental intermixing between buffer and absorber, particularly involving Cd and Cu, also is controlled and significantly affects device performance. Secondary phase formation at the interface is observed for some conditions and may be detrimental depending on the morphology. Theoretical calculations suggest optimal composition ranges for the buffer based on a suite of computed properties and drive process optimizations connected with observed film properties. Prepared by LLNL under Contract DE-AC52-07NA27344.

Direct measurement of the long-range p -d exchange coupling in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure

NASA Astrophysics Data System (ADS)

Akimov, I. A.; Salewski, M.; Kalitukha, I. V.; Poltavtsev, S. V.; Debus, J.; Kudlacik, D.; Sapega, V. F.; Kopteva, N. E.; Kirstein, E.; Zhukov, E. A.; Yakovlev, D. R.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Korenev, V. L.; Kusrayev, Yu. G.; Bayer, M.

2017-11-01

The exchange interaction between magnetic ions and charge carriers in semiconductors is considered to be a prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range p -d exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10-nm-thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10 nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift ΔS on the external magnetic field B . We show that in a strong magnetic field, ΔS is a linear function of B with an offset of Δp d=50 -100 μ eV at zero field from the FM induced effective exchange field. On the other hand, the s -d exchange interaction between conduction band electrons and FM, as well as the p -d contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.

Modulation-Doped SrTiO3/SrTi1-xZrxO3 Heterostructures

NASA Astrophysics Data System (ADS)

Kajdos, Adam Paul

Two-dimensional electron gases (2DEGs) in SrTiO3 have attracted considerable attention for exhibiting a variety of interesting physical phenomena, such as superconductivity and magnetism. So far, most of the literature has focused on interfaces between nonpolar SrTiO3 and polar perovskite oxides (e.g. LaAlO3 or rare-earth titanates), where high carrier density 2DEGs (˜3 x 1014 cm-2) are generated by polar discontinuity. Modulation doping is an alternative approach to generating a 2DEG that has been explored extensively in III-V semiconductors but has not heretofore been explored in complex oxides. This approach involves interfacing an undoped semiconductor with a doped semiconductor whose conduction band edge lies at a higher energy, which results in electrons diffusing into the undoped semiconductor transport channel, where scattering from ionized dopants is minimized. Realizing a high-mobility modulation-doped structure with a SrTiO3 transport channel therefore requires both the optimization of the transport channel by minimizing native defects as well as the development of a perovskite oxide which has a suitable band offset with SrTiO3 and can be electron-doped. The growth of high electron mobility SrTiO3 as a suitable transport channel material was previously demonstrated using the hybrid molecular beam epitaxy (MBE) approach, where Sr is delivered via a solid source and Ti is delivered using a metal-organic precursor, titanium (IV) tetra-isopropoxide (TTIP). Expanding on this, in-situ reflection high-energy electron diffraction (RHEED) is used to track the surface and resulting film cation stoichiometry of homoepitaxial SrTiO3 (001) thin films grown by hybrid MBE. It is shown that films with lattice parameters identical to bulk single-crystal substrates within the detection limit of high-resolution X-ray diffraction (XRD) measurements exhibit an evolution in surface reconstruction with increasing TTIP beam-equivalent pressure. The change in the observed surface reconstruction from (1x1) to (2x1) to c(4x4) is correlated with a change from mixed SrO/TiO2 to pure TiO2 surface termination. It is argued that optimal cation stoichiometry is achieved for growth conditions within the XRD-defined growth window that result in a c(4x4) surface lattice. The development of a doped perovskite oxide semiconductor with a suitable conduction band offset is then discussed as the next necessary step towards realizing modulation-doped heterostructures. The SrTixZr1-x O3 solid solution is investigated for this purpose, with a focus on optimizing cation stoichiometry to allow for controlled doping. In particular, the hybrid MBE growth of SrTixZr1-xO3 thin films is explored using a metal-organic precursor for Zr, zirconium tert-butoxide (ZTB). The successful generation of 2DEGs by modulation doping of SrTiO3 is then demonstrated in SrTiO3/La:SrTi0.95Zr0.05O 3 heterostructures, and the electronic structure is studied by Shubnikov-de Haas analysis using multiple-subband models.

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

NASA Astrophysics Data System (ADS)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

Coherently Strained Si-SixGe1-x Core-Shell Nanowire Heterostructures.

PubMed

Dillen, David C; Wen, Feng; Kim, Kyounghwan; Tutuc, Emanuel

2016-01-13

Coherently strained Si-SixGe1-x core-shell nanowire heterostructures are expected to possess a positive shell-to-core conduction band offset, allowing for quantum confinement of electrons in the Si core. We report the growth of epitaxial, coherently strained Si-SixGe1-x core-shell heterostructures through the vapor-liquid-solid mechanism for the Si core, followed in situ by the epitaxial SixGe1-x shell growth using ultrahigh vacuum chemical vapor deposition. The Raman spectra of individual nanowires reveal peaks associated with the Si-Si optical phonon mode in the Si core and the Si-Si, Si-Ge, and Ge-Ge vibrational modes of the SixGe1-x shell. The core Si-Si mode displays a clear red-shift compared to unstrained, bare Si nanowires thanks to the lattice mismatch-induced tensile strain, in agreement with calculated values using a finite-element continuum elasticity model combined with lattice dynamic theory. N-type field-effect transistors using Si-SixGe1-x core-shell nanowires as channel are demonstrated.

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In 2 O 3 nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of highmore » resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.« less

Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires.

PubMed

Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P; Schaller, Richard D; Gosztola, David J; Stroscio, Michael A; Dutta, Mitra

2018-04-27

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In 2 O 3 ) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In 2 O 3 nanostructure based device characteristics for potential optoelectronic applications. In 2 O 3 nanowires with cubic crystal structure (c-In 2 O 3 ) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy [Formula: see text] defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of [Formula: see text] defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

Energy band-gap calculations of short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices

NASA Astrophysics Data System (ADS)

Wu, Yi-hong; Fujita, Shizuo; Fujita, Shigeo

1990-01-01

We report on the calculations of energy band gaps based on the semiempirical tight-binding model for short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices (SLSs). During the calculation, much attention has been paid to the modeling of strain effect. It is found that (ZnTe)m(ZnSe)n superlattices grown on InAs, InP, and GaAs substrates show very different electronic properties from each other, which is consistent with experimental results now available. Assuming that the emission observed for (ZnTe)m(ZnSe)n SLS originates from intrinsic luminescence, we obtain an unstrained valence-band offset of 1.136±0.1 eV for this superlattice. On the other hand, the band gap of (ZnS)m(ZnSe)n superlattice grown coherently on GaP is found to exhibit a much stronger structure dependence than that grown coherently on GaAs. The difference of energy gap between superlattice with equal monolayers (m=n) and the corresponding alloy with equal chalcogenide composition is also discussed.

Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Turkulets, Yury; Shalish, Ilan

2018-01-01

Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies mostly on simulated band structures that are hardly ever verified experimentally. Here, we present a method that experimentally evaluates bandgap, band offsets, and electric fields, in complex multi-semiconductor layered structures, and it does so simultaneously in all the layers. The method uses a modest optical photocurrent spectroscopy setup at ambient conditions. The results are analyzed using a simple model for electro-absorption. As an example, we apply the method to a typical GaN high electron mobility transistor structure. Measurements under various external electric fields allow us to experimentally construct band diagrams, not only at equilibrium but also under any other working conditions of the device. The electric fields are then used to obtain the charge carrier density and mobility in the quantum well as a function of the gate voltage over the entire range of operating conditions of the device. The principles exemplified here may serve as guidelines for the development of methods for simultaneous characterization of all the layers in complex, multi-semiconductor structures.

A Ga2O3 underlayer as an isomorphic template for ultrathin hematite films toward efficient photoelectrochemical water splitting.

PubMed

Hisatomi, Takashi; Brillet, Jérémie; Cornuz, Maurin; Le Formal, Florian; Tétreault, Nicolas; Sivula, Kevin; Grätzel, Michael

2012-01-01

Hematite photoanodes for photoelectrochemical (PEC) water splitting are often fabricated as extremely-thin films to minimize charge recombination because of the short diffusion lengths of photoexcited carriers. However, poor crystallinity caused by structural interaction with a substrate negates the potential of ultrathin hematite photoanodes. This study demonstrates that ultrathin Ga2O3 underlayers, which were deposited on conducting substrates prior to hematite layers by atomic layer deposition, served as an isomorphic (corundum-type) structural template for ultrathin hematite and improved the photocurrent onset of PEC water splitting by 0.2 V. The benefit from Ga2O3 underlayers was most pronounced when the thickness of the underlayer was approximately 2 nm. Thinner underlayers did not work effectively as a template presumably because of insufficient crystallinity of the underlayer, while thicker ones diminished the PEC performance of hematite because the underlayer prevented electron injection from hematite to a conductive substrate due to the large conduction band offset. The enhancement of PEC performance by a Ga2O3 underlayer was more significant for thinner hematite layers owing to greater margins for improving the crystallinity of ultrathin hematite. It was confirmed that a Ga2O3 underlayer was applicable to a rough conducting substrate loaded with Sb-doped SnO2 nanoparticles, improving the photocurrent by a factor of 1.4. Accordingly, a Ga2O3 underlayer could push forward the development of host-guest-type nanocomposites consisting of highly-rough substrates and extremely-thin hematite absorbers.

On the physics of frequency-domain controlled source electromagnetics in shallow water. 1: isotropic conductivity

NASA Astrophysics Data System (ADS)

Chave, Alan D.; Everett, Mark E.; Mattsson, Johan; Boon, James; Midgley, Jonathan

2017-02-01

In recent years, marine controlled source electromagnetics (CSEM) has found increasing use in hydrocarbon exploration due to its ability to detect thin resistive zones beneath the seafloor. It is the purpose of this paper to evaluate the physics of CSEM for an ocean whose electrical thickness is comparable to or much thinner than that of the overburden using the in-line configuration through examination of the elliptically polarized seafloor electric field, the time-averaged energy flow depicted by the real part of the complex Poynting vector, energy dissipation through Joule heating and the Fréchet derivatives of the seafloor field with respect to the subseafloor conductivity that is assumed to be isotropic. The deep water (ocean layer electrically much thicker than the overburden) seafloor EM response for a model containing a resistive reservoir layer has a greater amplitude and reduced phase as a function of offset compared to that for a half-space, or a stronger and faster response. For an ocean whose electrical thickness is comparable to or much smaller than that of the overburden, the electric field displays a greater amplitude and reduced phase at small offsets, shifting to a stronger amplitude and increased phase at intermediate offsets and a weaker amplitude and enhanced phase at long offsets, or a stronger and faster response that first changes to stronger and slower, and then transitions to weaker and slower. These transitions can be understood by visualizing the energy flow throughout the structure caused by the competing influences of the dipole source and guided energy flow in the reservoir layer, and the air interaction caused by coupling of the entire subseafloor resistivity structure with the sea surface. A stronger and faster response occurs when guided energy flow is dominant, while a weaker and slower response occurs when the air interaction is dominant. However, at intermediate offsets for some models, the air interaction can partially or fully reverse the direction of energy flux in the reservoir layer toward rather than away from the source, resulting in a stronger and slower response. The Fréchet derivatives are dominated by preferential sensitivity to the reservoir layer conductivity for all water depths except at high frequencies, but also display a shift with offset from the galvanic to the inductive mode in the underburden and overburden due to the interplay of guided energy flow and the air interaction. This means that the sensitivity to the horizontal conductivity is almost as strong as to the vertical component in the shallow parts of the subsurface, and in fact is stronger than the vertical sensitivity deeper down. However, the sensitivity to horizontal conductivity is still weak compared to the vertical component within thin resistive regions. The horizontal sensitivity is gradually decreased when the water becomes deep. These observations in part explain the success of shallow towed CSEM using only measurements of the in-line component of the electric field.

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Hjort, Filip; Hashemi, Ehsan; Adolph, David; Ive, Tommy; Haglund, Àsa

2017-02-01

III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductive DBRs is ZnO/GaN due to the small conduction band offset and ease of n-type doping. In addition, this combination offers a small lattice mismatch and high refractive index contrast, which could yield a mirror with a broad stopband and a high peak reflectivity using less than 20 DBR-pairs. A crack-free ZnO/GaN DBR was grown by hybrid plasma-assisted molecular beam epitaxy. The ZnO layers were approximately 20 nm thick and had an electron concentration of 1×1019 cm-3, while the GaN layers were 80-110 nm thick with an electron concentration of 1.8×1018 cm-3. In order to measure the resistance, mesa structures were formed by dry etching through the top 3 DBR-pairs and depositing non-annealed Al contacts on the GaN-layers at the top and next to the mesas. The measured specific series resistance was dominated by the lateral and contact contributions and gave an upper limit of 10-3Ωcm2 for the vertical resistance. Simulations show that the ZnO electron concentration and the cancellation of piezoelectric and spontaneous polarization in strained ZnO have a large impact on the vertical resistance and that it could be orders of magnitudes lower than what was measured. This is the first report on electrically conductive ZnO/GaN DBRs and the upper limit of the resistance reported here is close to the lowest values reported for III-nitride-based DBRs.

CDTE alloys and their application for increasing solar cell performance

NASA Astrophysics Data System (ADS)

Swanson, Drew E.

Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x-ray photoelectron spectroscopy, and energy-dispersive x-ray spectroscopy were performed to characterize these cells. Voltage improvements on the order of 50 mV are presented at a thin (1 ?m) CdTe absorber condition. However an overall reduction in fill factor (FF) is seen, with a strong reduction in FF as the magnesium incorporation is increased. Detailed material characterization shows the formation of oxides at the back of CdMgTe during the passivation process. A CdTe capping layer is added to reduce oxidation and help maintain the uniformity of the CdMgTe layer. A tellurium back contact is also added in place of a carbon paint back contact, reducing the impact of the valance band offset (VBO) from the CMT. With the addition of the capping layer and tellurium back contact a consistent 50 mV increase is seen with improved FF. However this voltage increase is well below modeled Voc increases of 150 mV. CMT double hetero-structures are manufactured and analyzed to estimate the interface recombination at the CdTe/CMT interface. The CdTe/CMT interface is approximated at 2*105 cm s-1 and modeling is referenced predicting significant reduction in performance based on this interface quality. To improve interface quality by removing the need for a vacuum break, the deposition hardware is incorporated into the primary deposition system. Second, CdTe has a somewhat higher band gap than optimal for single-junction terrestrial solar-cell power generation. A reduction in the band gap could therefore result in an overall improvement in performance. To reduce the band gap, selenium was alloyed with CdTe using a novel co-sublimation extension of the close-space-sublimation process. Co-sublimated layers of CdSeTe with various selenium concentrations were characterized for optical absorption and atomic concentrations, as well as to track changes in their morphology and crystallinity. The lower band-gap CdSeTe films were then incorporated into the front of CdTe cells. This two-layer band-gap structure demonstrated higher current collection and increased quantum efficiency at longer wavelengths. Material characterization shows the diffusion of selenium through the CdTe during passivation resulting in improved in lifetime and a reduced voltage deficit at lower band gaps.

Efficient dynamic coherence transfer relying on offset locking using optical phase-locked loop

NASA Astrophysics Data System (ADS)

Xie, Weilin; Dong, Yi; Bretenaker, Fabien; Shi, Hongxiao; Zhou, Qian; Xia, Zongyang; Qin, Jie; Zhang, Lin; Lin, Xi; Hu, Weisheng

2018-01-01

We design and experimentally demonstrate a highly efficient coherence transfer based on composite optical phaselocked loop comprising multiple feedback servo loops. The heterodyne offset-locking is achieved by conducting an acousto-optic frequency shifter in combination with the current tuning and the temperature controlling of the semiconductor laser. The adaptation of the composite optical phase-locked loop enables the tight coherence transfer from a frequency comb to a semiconductor laser in a fully dynamic manner.

Exploring the Use of Alfven Waves in Magnetometer Calibration at Geosynchronous Orbit

NASA Technical Reports Server (NTRS)

Bentley, John; Sheppard, David; RIch, Frederick; Redmon, Robert; Loto'aniu, Paul; Chu, Donald

2016-01-01

An Alfven wave is a type magnetohydrodynamicwave that travels through a conducting fluid under the influence of a magnetic field. Researchers have successfully calculated offset vectors of magnetometers in interplanetary space by optimizing the offset to maximize certain Alfvenic properties of observed waves (Leinweber, Belcher). If suitable Alfven waves can be found in the magnetosphere at geosynchronous altitude then these techniques could be used to augment the overall calibration plan for magnetometers in this region such as on the GOES spacecraft, possibly increasing the time between regular maneuvers. Calibration maneuvers may be undesirable because they disrupt the activities of other instruments. Various algorithms to calculate an offset using Alfven waves were considered. A new variation of the Davis-Smith method was derived because it can be mathematically shown that the Davis-Smith method tolerates filtered data, which expands potential applications. The variant developed was designed to find only the offset in the plane normal to the main field because the overall direction of Earth's magnetic field rarely changes, and theory suggests the Alfvenic disturbances occur transverse to the main field. Other variations of the Davis-Smith method encounter problems with data containing waves that propagate in mostly the same direction. A searching algorithm was then designed to look for periods of time with potential Alfven waves in GOES 15 data based on parameters requiring that disturbances be normal to the main field and not change field magnitude. Final waves for calculation were hand-selected. These waves produced credible two-dimensional offset vectors when input to the Davis-Smith method. Multiple two-dimensional solutions in different planes can be combined to get a measurement of the complete offset. The resulting three dimensional offset did not show sufficient precision over several years to be used as a primary calibration method, but reflected changes in the offset fairly well, suggesting that the method could be helpful in monitoring trends of the offset vector when maneuvers cannot be used.

Thermal Conductivity Enhancement by Optical Phonon Sub-Band Engineering of Nanostructures Based on C and BN

DTIC Science & Technology

2005-09-01

Thermal Conductivity Enhancement by Optical Phonon Sub-Band Engineering of Nanostructures Based on C and BN DARPA CONTRACT MDA972-02-C-0044...AND SUBTITLE Thermal Conductivity Enhancement by Optical Phonon Sub-Band Engineering of Nanostructures Based on C and BN 5a. CONTRACT NUMBER 5b...Conductivity. Enhancement by Optical Phonon Sub-Bands Engineering in 3-D Nanostructures Based on C and BN Nanotubes" 1.3.1a. Phonon dynamics

Tolerance of the frequency deviation of LO sources at a MIMO system

NASA Astrophysics Data System (ADS)

Xiao, Jiangnan; Li, Xingying; Zhang, Zirang; Xu, Yuming; Chen, Long; Yu, Jianjun

2015-11-01

We analyze and simulate the tolerance of frequency offset at a W-band optical-wireless transmission system. The transmission system adopts optical polarization division multiplexing (PDM), and multiple-input multiple-output (MIMO) reception. The transmission signal adopts optical quadrature phase shift keying (QPSK) modulation, and the generation of millimeter-wave is based on the optical heterodyning technique. After 20-km single-mode fiber-28 (SMF-28) transmission, tens of Gb/s millimeter-wave signal is delivered. At the receiver, two millimeter-wave signals are down-converted into electrical intermediate-frequency (IF) signals in the analog domain by mixing with two electrical local oscillators (LOs) with different frequencies. We investigate the different frequency LO effect on the 2×2 MIMO system performance for the first time, finding that the process during DSP of implementing frequency offset estimation (FOE) before cascaded multi-modulus-algorithm (CMMA) equalization can get rid of the inter-channel interference (ICI) and improve system bit-error-ratio (BER) performance in this type of transmission system.

Construction and Calibration of a Difference Frequency Laser Spectrometer and New THZ Frequency Measurements of water and Ammonia

NASA Technical Reports Server (NTRS)

Pearson, J. C.; Pickett, Herbert M.; Chen, Pin; Matsuura, Shuji; Blake, Geoffry A.

1999-01-01

A three laser system based on 852nm DBR lasers has been constructed and used to generate radiation in the 750 GHz to 1600 GHz frequency region. The system works by locking two of the three lasers to modes of an ultra low expansion Fabry-Perot cavity. The third laser is offset locked to one of the cavity locked lasers with conventional microwave techniques. The signal from the offset laser and the other cavity locked laser are injected into a Master Oscillator Power Amplifier (MOPA), amplified and focused on a low temperature grown GaAs photomixer, which radiates the difference frequency. The system has been calibrated with molecular lines to better than one part in 10(exp 7). In this paper we present the application of this system to the v(sub 2) in inversion band of Ammonia and the ground and v(sub 2) states of water. A discussion of the system design, the calibration and the new spectral measurements will be presented.

Comprehensive investigation of noble metal nanoparticles shape, size and material on the optical response of optimal plasmonic Y-splitter waveguides

NASA Astrophysics Data System (ADS)

Ahmadivand, Arash; Golmohammadi, Saeed

2014-01-01

With the purpose of guiding and splitting of optical power at C-band spectrum, we studied Y-shape splitters based on various shapes of nanoparticles as a plasmon waveguide. We applied different configurations of Gold (Au) and Silver (Ag) nanoparticles including spheres, rods and rings, to optimize the efficiency and losses of two and four-branch splitters. The best performance in light transportation specifically at telecom wavelength (λ≈1550 nm) is achieved by nanorings, due to an extra degree of freedom in their geometrical components. In addition, comparisons of several values for offset distance (doffset) of examined structures shows that Au nanoring splitters with feasible lower doffset have high quality in guiding and splitting of light through the structure. Finally, we studied four-branch Y-splitters based on Au and Ag nanorings with least possible offset distances to optimize the splitter performance. The power transmission as a key element is calculated for examined structures.

Augustine Band of Cahuilla Indians Energy Conservation and Options Analysis - Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul Turner

2008-07-11

The Augustine Band of Cahuilla Indians was awarded a grant through the Department of Energy First Steps program in June of 2006. The primary purpose of the grant was to enable the Tribe to develop energy conservation policies and a strategy for alternative energy resource development. All of the work contemplated by the grant agreement has been completed and the Tribe has begun implementing the resource development strategy through the construction of a 1.0 MW grid-connected photovoltaic system designed to offset a portion of the energy demand generated by current and projected land uses on the Tribe’s Reservation. Implementation ofmore » proposed energy conservation policies will proceed more deliberately as the Tribe acquires economic development experience sufficient to evaluate more systematically the interrelationships between conservation and its economic development goals.« less

Effects of Conducting Plane on Band and Choral Musicians' Perceptions of Conductor and Ensemble Expressivity

ERIC Educational Resources Information Center

Silvey, Brian A.; Fisher, Ryan A.

2015-01-01

The purpose of this study was to examine whether one aspect of conducting technique, the conducting plane, would affect band and/or choral musicians' perceptions of conductor and ensemble expressivity. A band and a choral conductor were each videotaped conducting 1-min excerpts from Morten Lauridsen's "O Magnum Mysterium" while using a…

Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

NASA Astrophysics Data System (ADS)

Fang, Fang

2011-12-01

Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a combination of core levels and valence band ultraviolet photoemission spectra of the bulk materials as well as the heterojunction (Sb2Te 3/Bi2Te3), the VBO at p-type Sb2Te 3 and n-type Bi2Te3 is determined as 0.04 +/- 0.10 eV. Such a small energy offset is within the same magnitude of the thermal energy of kT, at room temperature. The motivation for the II-VI ZnTe-based thin film solar cell derives from the need to identify and overcome performance-limiting properties related to the processing of film deposition using close space sublimation (CSS). Chemical and electronic properties of the CSS grown ZnTe/ZnSe films were studied in x-ray diffraction, scanning electron microscopy and photoemission spectroscopy. Specifically, Se oxide was observed on the ZnSe surface, the removal of this oxide generated apparent offsets in the valence band and hence the alignment at the heterojunction energy diagram. Processing steps to mitigate oxidation yielded the best cells. Film structure was studied on the dependence of growth time; physical film damage is found during the initial stages when depositing ZnTe on a grown ZnSe film. Preliminary studies of films grown by evaporation and their characterizations are presented at last. In this thesis, a better understanding of the electronic structure at interfaces is built in two different thin film devices, and the resulting band energy diagram of the corresponding devices offered effective feedback in materials and device.The problem of energy equilibrium in the human body has received a great deal.

The Gemini NICI Planet-Finding Campaign: The Offset Ring of HR 4796 A

NASA Technical Reports Server (NTRS)

Wahhaj, Zahed; Liu, Michael C.; Biller, Beth A.; Nielsen, Eric L.; Hayward, Thomas L.; Kuchner, Marc J.; Close, Laird M.; Chun, Mark; Ftaclas, Christ; Toomey, Douglas W.

2014-01-01

We present J, H, CH4 short (1.578 micrometers), CH4 long (1.652 micrometers) and K(sub s)-band images of the dust ring around the 10 Myr old star HR 4796 A obtained using the Near Infrared Coronagraphic Imager (NICI) on the Gemini-South 8.1 m Telescope. Our images clearly show for the first time the position of the star relative to its circumstellar ring thanks to NICI's translucent focal plane occulting mask. We employ a Bayesian Markov chain Monte Carlo method to constrain the offset vector between the two. The resulting probability distribution shows that the ring center is offset from the star by 16.7 +/- 1.3 milliarcseconds along a position angle of 26 +/- 3deg, along the PA of the ring, 26.47 +/- 0.04deg. We find that the size of this offset is not large enough to explain the brightness asymmetry of the ring. The ring is measured to have mostly red reflectivity across the JHKs filters, which seems to indicate micron-sized grains. Just like Neptune's 3:2 and 2:1 mean-motion resonances delineate the inner and outer edges of the classical Kuiper belt, we find that the radial extent of the HR 4796 A and the Fomalhaut rings could correspond to the 3:2 and 2:1 mean-motion resonances of hypothetical planets at 54.7 AU and 97.7 AU in the two systems, respectively. A planet orbiting HR 4796 A at 54.7 AU would have to be less massive than 1.6 Jup mass so as not to widen the ring too much by stirring.

Medial malleolar fractures: a biomechanical study of fixation techniques.

PubMed

Fowler, T Ty; Pugh, Kevin J; Litsky, Alan S; Taylor, Benjamin C; French, Bruce G

2011-08-08

Fracture fixation of the medial malleolus in rotationally unstable ankle fractures typically results in healing with current fixation methods. However, when failure occurs, pullout of the screws from tension, compression, and rotational forces is predictable. We sought to biomechanically test a relatively new technique of bicortical screw fixation for medial malleoli fractures. Also, the AO group recommends tension-band fixation of small avulsion type fractures of the medial malleolus that are unacceptable for screw fixation. A well-documented complication of this technique is prominent symptomatic implants and secondary surgery for implant removal. Replacing stainless steel 18-gauge wire with FiberWire suture could theoretically decrease symptomatic implants. Therefore, a second goal was to biomechanically compare these 2 tension-band constructs. Using a tibial Sawbones model, 2 bicortical screws were compared with 2 unicortical cancellous screws on a servohydraulic test frame in offset axial, transverse, and tension loading. Second, tension-band fixation using stainless steel wire was compared with FiberWire under tensile loads. Bicortical screw fixation was statistically the stiffest construct under tension loading conditions compared to unicortical screw fixation and tension-band techniques with FiberWire or stainless steel wire. In fact, unicortical screw fixation had only 10% of the stiffness as demonstrated in the bicortical technique. In a direct comparison, tension-band fixation using stainless steel wire was statistically stiffer than the FiberWire construct. Copyright 2011, SLACK Incorporated.

Handling the influence of chemical shift in amplitude-modulated heteronuclear dipolar recoupling solid-state NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basse, Kristoffer; Shankar, Ravi; Bjerring, Morten

We present a theoretical analysis of the influence of chemical shifts on amplitude-modulated heteronuclear dipolar recoupling experiments in solid-state NMR spectroscopy. The method is demonstrated using the Rotor Echo Short Pulse IRrAdiaTION mediated Cross-Polarization ({sup RESPIRATION}CP) experiment as an example. By going into the pulse sequence rf interaction frame and employing a quintuple-mode operator-based Floquet approach, we describe how chemical shift offset and anisotropic chemical shift affect the efficiency of heteronuclear polarization transfer. In this description, it becomes transparent that the main attribute leading to non-ideal performance is a fictitious field along the rf field axis, which is generated frommore » second-order cross terms arising mainly between chemical shift tensors and themselves. This insight is useful for the development of improved recoupling experiments. We discuss the validity of this approach and present quaternion calculations to determine the effective resonance conditions in a combined rf field and chemical shift offset interaction frame transformation. Based on this, we derive a broad-banded version of the {sup RESPIRATION}CP experiment. The new sequence is experimentally verified using SNNFGAILSS amyloid fibrils where simultaneous {sup 15}N → {sup 13}CO and {sup 15}N → {sup 13}C{sub α} coherence transfer is demonstrated on high-field NMR instrumentation, requiring great offset stability.« less

Hole Concentration vs. Mn Fraction in a Diluted (Ga,Mn)As Ferromagnetic Semiconductor

DTIC Science & Technology

2002-01-01

4785 (1999). 5. T. Hayashi , M. Tanaka, and T. Nishinaga, J. App!. Ph vs. 81, 4865 (1997). 6. H. Ohno and F. Matsukura, Solid State Commnin . 117, 179...off-set between the " and I bands, and the Fermi energy (EF) increases to the right. 231 REFERENCES I . H. Ohno , H. Munekata, T. Penney, S. von Moln...r, and L. L. Chang, Phys. Rev. Lett. 68, 2664 (1992). 2. H. Ohno , A. Shen, F. Matsukura. A. Oiwa, A. Endo, S. Katsumnoto, and Y. lye, Appl. Ph vs

Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bercegol, Adrien, E-mail: adrien.bercegol@polytechnique.edu; Chacko, Binoy; Klenk, Reiner

For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conductionmore » band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.« less

Twenty-Five Years of Landsat Thermal Band Calibration

NASA Technical Reports Server (NTRS)

Barsi, Julia A.; Markham, Brian L.; Schoff, John R.; Hook, Simon J.; Raqueno, Nina G.

2010-01-01

Landsat-7 Enhanced Thematic Mapper+ (ETM+), launched in April 1999, and Landsat-5 Thematic Mapper (TM), launched in 1984, both have a single thermal band. Both instruments thermal band calibrations have been updated previously: ETM+ in 2001 for a pre-launch calibration error and TM in 2007 for data acquired since the current era of vicarious calibration has been in place (1999). Vicarious calibration teams at Rochester Institute of Technology (RIT) and NASA/Jet Propulsion Laboratory (JPL) have been working to validate the instrument calibration since 1999. Recent developments in their techniques and sites have expanded the temperature and temporal range of the validation. The new data indicate that the calibration of both instruments had errors: the ETM+ calibration contained a gain error of 5.8% since launch; the TM calibration contained a gain error of 5% and an additional offset error between 1997 and 1999. Both instruments required adjustments in their thermal calibration coefficients in order to correct for the errors. The new coefficients were calculated and added to the Landsat operational processing system in early 2010. With the corrections, both instruments are calibrated to within +/-0.7K.

In-Band Asymmetry Compensation for Accurate Time/Phase Transport over Optical Transport Network

PubMed Central

Siu, Sammy; Hu, Hsiu-fang; Lin, Shinn-Yan; Liao, Chia-Shu; Lai, Yi-Liang

2014-01-01

The demands of precise time/phase synchronization have been increasing recently due to the next generation of telecommunication synchronization. This paper studies the issues that are relevant to distributing accurate time/phase over optical transport network (OTN). Each node and link can introduce asymmetry, which affects the adequate time/phase accuracy over the networks. In order to achieve better accuracy, protocol level full timing support is used (e.g., Telecom-Boundary clock). Due to chromatic dispersion, the use of different wavelengths consequently causes fiber link delay asymmetry. The analytical result indicates that it introduces significant time error (i.e., phase offset) within 0.3397 ns/km in C-band or 0.3943 ns/km in L-band depending on the wavelength spacing. With the proposed scheme in this paper, the fiber link delay asymmetry can be compensated relying on the estimated mean fiber link delay by the Telecom-Boundary clock, while the OTN control plane is responsible for processing the fiber link delay asymmetry to determine the asymmetry compensation in the timing chain. PMID:24982948

VizieR Online Data Catalog: AKARI NEP Survey sources at 18um (Pearson+, 2014)

NASA Astrophysics Data System (ADS)

Pearson, C. P.; Serjeant, S.; Oyabu, S.; Matsuhara, H.; Wada, T.; Goto, T.; Takagi, T.; Lee, H. M.; Im, M.; Ohyama, Y.; Kim, S. J.; Murata, K.

2015-04-01

The NEP-Deep survey at 18u in the IRC-L18W band is constructed from a total of 87 individual pointed observations taken between May 2006 to August 2007, using the IRC Astronomical Observing Template (AOT) designed for deep observations (IRC05), with approximately 2500 second exposures per IRC filter in all mid-infrared bands. The deep imaging IRC05 AOT has no explicit dithering built into the AOT operation, therefore dithering is achieved by layering separate pointed observations on at least three positions on a given piece of sky. The NEP-Wide survey consists of 446 pointed observations with .300 second exposures for each filter. The NEP-Wide survey uses the shallower IRC03 AOT optimized for large area multi-band mapping with the dithering included within the AOT. Note that for both surveys, although images are taken simultaneously in all three IRC channels, the target area of sky in the MIR-L channel is offset from the corresponding area of sky in the NIR/MIR-S channel by ~20arcmin. (2 data files).

Galaxy Zoo: finding offset discs and bars in SDSS galaxies★

NASA Astrophysics Data System (ADS)

Kruk, Sandor J.; Lintott, Chris J.; Simmons, Brooke D.; Bamford, Steven P.; Cardamone, Carolin N.; Fortson, Lucy; Hart, Ross E.; Häußler, Boris; Masters, Karen L.; Nichol, Robert C.; Schawinski, Kevin; Smethurst, Rebecca J.

2017-08-01

We use multiwavelength Sloan Digital Sky Survey (SDSS) images and Galaxy Zoo morphologies to identify a sample of ˜270 late-type galaxies with an off-centre bar. We measure offsets in the range 0.2-2.5 kpc between the photometric centres of the stellar disc and stellar bar. The measured offsets correlate with global asymmetries of the galaxies, with those with largest offsets showing higher lopsidedness. These findings are in good agreement with predictions from simulations of dwarf-dwarf tidal interactions producing off-centre bars. We find that the majority of galaxies with off-centre bars are of Magellanic type, with a median mass of 109.6 M⊙, and 91 per cent of them having M⋆ < 3 × 1010 M⊙, the characteristic mass at which galaxies start having higher central concentrations attributed to the presence of bulges. We conduct a search for companions to test the hypothesis of tidal interactions, but find that a similar fraction of galaxies with offset bars have companions within 100 kpc as galaxies with centred bars. Although this may be due to the incompleteness of the SDSS spectroscopic survey at the faint end, alternative scenarios that give rise to offset bars such as interactions with dark companions or the effect of lopsided halo potentials should be considered. Future observations are needed to confirm possible low-mass companion candidates and to determine the shape of the dark matter halo, in order to find the explanation for the off-centre bars in these galaxies.

Towards seismic waveform inversion of long-offset Ocean-Bottom Seismic data for deep crustal imaging offshore Western Australia

NASA Astrophysics Data System (ADS)

Monnier, S.; Lumley, D. E.; Kamei, R.; Goncharov, A.; Shragge, J. C.

2016-12-01

Ocean Bottom Seismic datasets have become increasingly used in recent years to develop high-resolution, wavelength-scale P-wave velocity models of the lithosphere from waveform inversion, due to their recording of long-offset transmitted phases. New OBS surveys evolve towards novel acquisition geometries involving longer offsets (several hundreds of km), broader frequency content (1-100 Hz), while receiver sampling often remains sparse (several km). Therefore, it is critical to assess the effects of such geometries on the eventual success and resolution of waveform inversion velocity models. In this study, we investigate the feasibility of waveform inversion on the Bart 2D OBS profile acquired offshore Western Australia, to investigate regional crustal and Moho structures. The dataset features 14 broadband seismometers (0.01-100 Hz) from AuScope's national OBS fleet, offsets in excess of 280 km, and a sparse receiver sampling (18 km). We perform our analysis in four stages: (1) field data analysis, (2) 2D P-wave velocity model building, synthetic data (3) modelling, and (4) waveform inversion. Data exploration shows high-quality active-source signal down to 2Hz, and usable first arrivals to offsets greater than 100 km. The background velocity model is constructed by combining crustal and Moho information in continental reference models (e.g., AuSREM, AusMoho). These low-resolution studies suggest a crustal thickness of 20-25 km along our seismic line and constitute a starting point for synthetic modelling and inversion. We perform synthetic 2D time-domain modelling to: (1) evaluate the misfit between synthetic and field data within the usable frequency band (2-10 Hz); (2) validate our velocity model; and (3) observe the effects of sparse OBS interval on data quality. Finally, we apply 2D acoustic frequency-domain waveform inversion to the synthetic data to generate velocity model updates. The inverted model is compared to the reference model to investigate the improved crustal resolution and Moho boundary delineation that could be realized using waveform inversion, and to evaluate the effects of the acquisition parameters. The inversion strategies developed through the synthetic tests will help the subsequent inversion of sparse, long-offset OBS field data.

Mechanistic insight into the enhanced photocatalytic activity of single-atom Pt, Pd or Au-embedded g-C3N4

NASA Astrophysics Data System (ADS)

Tong, Tong; Zhu, Bicheng; Jiang, Chuanjia; Cheng, Bei; Yu, Jiaguo

2018-03-01

Single atoms of platinum (Pt), palladium (Pd) or gold (Au) trapped by two-dimensional graphitic carbon nitride (g-C3N4) exhibit superior photocatalytic performance. However, the underlying mechanism of single-atom noble metal/g-C3N4 photocatalytic system is still unclear. Herein, the structural, electronic and optical properties of single-atom Pt, Pd and Au loaded on bilayer g-C3N4 (BL-g-C3N4) substrate were investigated by density functional theory (DFT) simulations. The results indicate that single-atom Pt/Pd/Au loading can significantly narrow the band gap of g-C3N4 and thus increase its light absorption in the visible-light region. Rather than being adsorbed on the surface, Pt and Pd atoms tend to be embedded into g-C3N4 interlayer and act as bridges to facilitate the interlayer charge carrier transfer due to the effects of conduction band offset. In particular, an internal electric field is generated in Pt/BL-g-C3N4, which is further beneficial for separating charge carrier of photoexcited g-C3N4. By contrast, Au can only be adsorbed on the g-C3N4 surface (in the six-fold cavity) and deliver a limited amount of charge carrier excited in the N-conjugated aromatic pore of g-C3N4 surface. Our finding is conducive to understanding the interactive relationship between single-atom noble metal co-catalysts and g-C3N4 and to the design of high-efficiency photocatalyst.

Rapid-onset/offset, variably scheduled 60 Hz electric and magnetic field exposure reduces nocturnal serum melatonin concentration in nonhuman primates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, W.R.; Smith, H.D.; Reiter, R.J.

Experiments with rodents indicate that power-frequency electric field (EF) or magnetic field (MF) exposure can suppress the normal nocturnal increase in melatonin concentration in pineal gland and blood. In a separate set of three experiments conducted with nonhuman primates, the authors did not observe melatonin suppression as a result of 6 weeks of day-time exposure to combined 60 Hz electric and magnetic fields (E/MF) with regularly schedule ``slow`` E/MF onsets/offsets. The study described here used a different exposure paradigm in which two baboons were exposed to E/MF with ``rapid`` E/MF onsets/offsets accompanied by EF transients not found with slowly rampedmore » E/MF onset/offset; profound reductions in nocturnal serum melatonin concentration were observed in this experiment. If replicated in a more extensive experiment, the observation of melatonin suppression only in the presence of E/MF transients would suggest that very specific exposure parameters determine the effects of 60 Hz E/MF on melatonin.« less

Design and Performance of a Wideband Radio Telescope

NASA Technical Reports Server (NTRS)

Weinreb, Sander; Imbriale, William A.; Jones, Glenn; Mani, Handi

2012-01-01

The Goldstone Apple Valley Radio Telescope (GAVRT) is an outreach project, a partnership involving NASA's Jet Propulsion Laboratory (JPL), the Lewis Center for Educational Research (LCER), and the Apple Valley Unified School District near the NASA Goldstone deep space communication complex. This educational program currently uses a 34-meter antenna, DSS12, at Goldstone for classroom radio astronomy observations via the Internet. The current program utilizes DSS12 in two narrow frequency bands around S-band (2.3 GHz) and X-band (8.45 GHz), and is used by a training program involving a large number of secondary school teachers and their classrooms. To expand the program, a joint JPL/LCER project was started in mid-2006 to retrofit an additional existing 34-meter beam-waveguide antenna, DSS28, with wideband feeds and receivers to cover the 0.5-to- 14-GHz frequency bands. The DSS28 antenna has a 34-meter diameter main reflector, a 2.54-meter subreflector, and a set of beam waveguide mirrors surrounded by a 2.43-meter tube. The antenna was designed for high power and a narrow frequency band around 7.2 GHz. The performance at the low end of the frequency band desired for the educational program would be extremely poor if the beam waveguide system was used as part of the feed system. Consequently, the 34-meter antenna was retrofitted with a tertiary offset mirror placed at the vertex of the main reflector. The tertiary mirror can be rotated to use two wideband feeds that cover the 0.5-to-14-GHz band. The earlier designs for both GAVRT and the DSN only used narrow band feeds and consequently, only covered a small part of the S- and X-band frequencies. By using both a wideband feed and wideband amplifiers, the entire band from 0.5 to 14 GHz is covered, expanding significantly the science activities that can be studied using this system.

Development of a Novel Hybrid Multi-Junction Architecture for Silicon Solar Cells

DTIC Science & Technology

2015-03-26

W Watts KOH Potassium Hydroxide xj Junction depth k Thermal conductivity z Normal distance l Conductor length σ Stefan...outermost orbit [9]. A material conducts electricity when its valence electrons move into the conduction band and become conductor electrons. Conductor ...become a conductor , it must absorb enough energy to overcome the band gap, which is the energy difference between the valence band and the conduction

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

NASA Astrophysics Data System (ADS)

Wu, Kongping; Liao, Meiyong; Sang, Liwen; Liu, Jiangwei; Imura, Masataka; Ye, Haitao; Koide, Yasuo

2018-04-01

Tailoring the electronic states of the dielectric oxide/diamond interface is critical to the development of next generation semiconductor devices like high-power high-frequency field-effect transistors. In this work, we investigate the electronic states of the TiO2/diamond 2 × 1-(100) interface by using first principles total energy calculations. Based on the calculation of the chemical potentials for the TiO2/diamond interface, it is observed that the hetero-interfaces with the C-OTi configuration or with two O vacancies are the most energetically favorable structures under the O-rich condition and under Ti-rich condition, respectively. The band structure and density of states of both TiO2/diamond and TiO2/H-diamond hetero-structures are calculated. It is revealed that there are considerable interface states at the interface of the anatase TiO2/diamond hetero-structure. By introducing H on the diamond surface, the interface states are significantly suppressed. A type-II alignment band structure is disclosed at the interface of the TiO2/diamond hetero-structure. The valence band offset increases from 0.6 to 1.7 eV when H is introduced at the TiO2/diamond interface.

Optical single side-band Nyquist PAM-4 transmission using dual-drive MZM modulation and direct detection.

PubMed

Zhu, Mingyue; Zhang, Jing; Yi, Xingwen; Ying, Hao; Li, Xiang; Luo, Ming; Song, Yingxiong; Huang, Xiatao; Qiu, Kun

2018-03-19

We present the design and optimization of the optical single side-band (SSB) Nyquist four-level pulse amplitude modulation (PAM-4) transmission using dual-drive Mach-Zehnder modulator (DDMZM)modulation and direct detection (DD), aiming at the C-band cost-effective, high-speed and long-distance transmission. At the transmitter, the laser line width should be small to avoid the phase noise to amplitude noise conversion and equalization-enhanced phase noise due to the large chromatic dispersion (CD). The optical SSB signal is generated after optimizing the optical modulation index (OMI) and hence the minimum phase condition which is required by the Kramers-Kronig (KK) receiver can also be satisfied. At the receiver, a simple AC-coupled photodiode (PD) is used and a virtual carrier is added for the KK operation to alleviate the signal-to-signal beating interference (SSBI).A Volterra filter (VF) is cascaded for remaining nonlinearities mitigation. When the fiber nonlinearity becomes significant, we elect to use an optical band-pass filter with offset filtering. It can suppress the simulated Brillouin scattering and the conjugated distortion by filtering out the imaging frequency components. With our design and optimization, we achieve single-channel, single polarization 102.4-Gb/s Nyquist PAM-4 over 800-km standard single-mode fiber (SSMF).

Solid state instrumentation concepts for earth resource observation

NASA Technical Reports Server (NTRS)

Richard, H. L.

1982-01-01

Late in 1980, specifications were prepared for detail design definition of a six band solid state multispectral instrument having three visible (VIS), one near infrared (NIR), and two short wave infrared (SWIR) bands. This instrument concept, known as the Multispectral Linear Array (MLA), also offered increased spatial resolution, on board gain and offset correction, and additional operational modes which would allow for cross track and stereoscopic viewing as well as a multialtitude operational capability. A description is presented of a summary of some of the salient features of four different MLA design concepts, as developed by four American companies. The designs ranged from the use of multiple refractive telescopes utilizing three groups of focal plane detectors electronic correlation processing for achieving spatial registration, and incorporating palladium silicide (PdSi) SWIR detectors, to a four-mirror all-reflective telecentric system utilizing a beam splitter for spatial registration.

Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

NASA Astrophysics Data System (ADS)

Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

2018-02-01

In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

Probability of Two-Step Photoexcitation of Electron from Valence Band to Conduction Band through Doping Level in TiO2.

PubMed

Nishikawa, Masami; Shiroishi, Wataru; Honghao, Hou; Suizu, Hiroshi; Nagai, Hideyuki; Saito, Nobuo

2017-08-17

For an Ir-doped TiO 2 (Ir:TiO 2 ) photocatalyst, we examined the most dominant electron-transfer path for the visible-light-driven photocatalytic performance. The Ir:TiO 2 photocatalyst showed a much higher photocatalytic activity under visible-light irradiation than nondoped TiO 2 after grafting with the cocatalyst of Fe 3+ . For the Ir:TiO 2 photocatalyst, the two-step photoexcitation of an electron from the valence band to the conduction band through the Ir doping level occurred upon visible-light irradiation, as observed by electron spin resonance spectroscopy. The two-step photoexcitation through the doping level was found to be a more stable process with a lower recombination rate of hole-electron pairs than the two-step photoexcitation process through an oxygen vacancy. Once electrons are photoexcited to the conduction band by the two-step excitation, the electrons can easily transfer to the surface because the conduction band is a continuous electron path, whereas the electrons photoexcited at only the doping level could not easily transfer to the surface because of the discontinuity of this path. The observed two-step photoexcitation from the valence band to the conduction band through the doping level significantly contributes to the enhancement of the photocatalytic performance.

Multi-band analysis of temperature-dependent transport coefficients (conductivity, Hall, Seebeck, and Nernst) of Ni-doped CoSb3

NASA Astrophysics Data System (ADS)

Kajikawa, Y.

2016-02-01

The experimental data on the temperature dependence of the four transport coefficients, i.e., the electrical conductivity (σ), Hall coefficient (RH), Seebeck coefficient (S), and Nernst coefficient (Q), of n-type Co0.999Ni0.001Sb3 reported by Sun et al. [Nat. Commun. 6, 7475 (2015)] have been analyzed in a multi-band model, especially focusing on the low temperature data. The multi-band model includes not only the lowest valley of the conduction band at the Γ point but also satellite valleys at the second minima together with an impurity band. The lowest valley at the Γ point is assumed to split into the c1 band and the spin-orbit split-off (so) band. For the analysis, the general expression of the Nernst coefficient in the multi-band model is derived. At such low temperatures that the other bands than the c1 and the impurity band can be neglected, this expression is shown to be approximated as the sum of three terms: the intrinsic terms due to the Nernst coefficients in the two bands themselves and a cross term proportional to the difference of Seebeck coefficients between the two bands. As a result of the analysis, it is proved that the anomalous positive peak of S(T) observed around T = 20 K as well as the sharp rise of the Hall mobility observed from 15 K to 40 K are due to the transition from hopping conduction in the impurity band to conduction in the c1 band. On the other hand, the pronounced peak of Q(T) observed slightly below 40 K is proved to be due to the cross term between the impurity band and the c1 band. In addition, a shoulder of Q(T) appeared around T = 80 K lends clear evidence of the existence of the so band, while the increase in both of σ(T) and | S ( T ) | above 150 K suggests the existence of the satellite valleys.

Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell.

PubMed

Martí, A; Antolín, E; Stanley, C R; Farmer, C D; López, N; Díaz, P; Cánovas, E; Linares, P G; Luque, A

2006-12-15

We present intermediate-band solar cells manufactured using quantum dot technology that show for the first time the production of photocurrent when two sub-band-gap energy photons are absorbed simultaneously. One photon produces an optical transition from the intermediate-band to the conduction band while the second pumps an electron from the valence band to the intermediate-band. The detection of this two-photon absorption process is essential to verify the principles of operation of the intermediate-band solar cell. The phenomenon is the cornerstone physical principle that ultimately allows the production of photocurrent in a solar cell by below band gap photon absorption, without degradation of its output voltage.

Programming Cardiac Resynchronization Therapy for Electrical Synchrony: Reaching Beyond Left Bundle Branch Block and Left Ventricular Activation Delay.

PubMed

Varma, Niraj; O'Donnell, David; Bassiouny, Mohammed; Ritter, Philippe; Pappone, Carlo; Mangual, Jan; Cantillon, Daniel; Badie, Nima; Thibault, Bernard; Wisnoskey, Brian

2018-02-06

QRS narrowing following cardiac resynchronization therapy with biventricular (BiV) or left ventricular (LV) pacing is likely affected by patient-specific conduction characteristics (PR, qLV, LV-paced propagation interval), making a universal programming strategy likely ineffective. We tested these factors using a novel, device-based algorithm (SyncAV) that automatically adjusts paced atrioventricular delay (default or programmable offset) according to intrinsic atrioventricular conduction. Seventy-five patients undergoing cardiac resynchronization therapy (age 66±11 years; 65% male; 32% with ischemic cardiomyopathy; LV ejection fraction 28±8%; QRS duration 162±16 ms) with intact atrioventricular conduction (PR interval 194±34, range 128-300 ms), left bundle branch block, and optimized LV lead position were studied at implant. QRS duration (QRSd) reduction was compared for the following pacing configurations: nominal simultaneous BiV (Mode I: paced/sensed atrioventricular delay=140/110 ms), BiV+SyncAV with 50 ms offset (Mode II), BiV+SyncAV with offset that minimized QRSd (Mode III), or LV-only pacing+SyncAV with 50 ms offset (Mode IV). The intrinsic QRSd (162±16 ms) was reduced to 142±17 ms (-11.8%) by Mode I, 136±14 ms (-15.6%) by Mode IV, and 132±13 ms (-17.8%) by Mode II. Mode III yielded the shortest overall QRSd (123±12 ms, -23.9% [ P <0.001 versus all modes]) and was the only configuration without QRSd prolongation in any patient. QRS narrowing occurred regardless of QRSd, PR, or LV-paced intervals, or underlying ischemic disease. Post-implant electrical optimization in already well-selected patients with left bundle branch block and optimized LV lead position is facilitated by patient-tailored BiV pacing adjusted to intrinsic atrioventricular timing using an automatic device-based algorithm. © 2018 The Authors. Published on behalf of the American Heart Association, Inc., by Wiley.

Neonate Auditory Brainstem Responses to CE-Chirp and CE-Chirp Octave Band Stimuli I: Versus Click and Tone Burst Stimuli.

PubMed

Cobb, Kensi M; Stuart, Andrew

The purpose of the study was to generate normative auditory brainstem response (ABR) wave component peak latency and amplitude values for neonates with air- and bone-conducted CE-Chirps and air-conducted CE-Chirp octave band stimuli (i.e., 500, 1000, 2000, and 4000 Hz). A second objective was to compare neonate ABRs to CE-Chirp stimuli with ABR responses to traditional click and tone burst stimuli with the same stimulus parameters. Participants were 168 healthy neonates. ABRs were obtained to air- and bone-conducted CE-Chirp and click stimuli and air-conducted CE-Chirp octave band and tone burst stimuli. The effects of stimulus level, rate, and polarity were examined with air-conducted CE-Chirps and clicks. The effect of stimulus level was also examined with bone-conducted CE-Chirps and clicks and air-conducted CE-Chirp octave band stimuli. In general, ABR wave V amplitudes to air- and bone-conducted CE-Chirp stimuli were significantly larger (p < 0.05) than those evoked to traditional click and tone burst stimuli. Systematic statistically significant (p < 0.05) wave V latency differences existed between the air- and bone-conducted CE-Chirp and CE-Chirp octave band stimuli relative to traditional click and tone burst stimuli. ABRs to air- and bone-conducted CE-Chirps and CE-Chirp octave band stimuli may be valuable in the assessment of newborn infants. However, the prognostic value of such stimuli needs to be validated.

Influence of elevation on bark beetle (Coleoptera: Curculionidae, Scolytinae) community structure and flight periodicity in ponderosa pine forests of Arizona.

PubMed

Williams, Kelly K; McMillin, Joel D; DeGomez, Tom E; Clancy, Karen M; Miller, Andy

2008-02-01

We examined abundance and flight periodicity of five Ips and six Dendroctonus species (Coleoptera: Curculionidae, Scolytinae) among three different elevation bands in ponderosa pine (Pinus ponderosa Douglas ex. Lawson) forests of northcentral Arizona. Bark beetle populations were monitored at 10 sites in each of three elevation bands (low: 1,600-1,736 m; middle: 2,058-2,230 m; high: 2,505-2,651 m) for 3 yr (2004-2006) using pheromone-baited Lindgren funnel traps. Trap contents were collected weekly from March to December. We also studied temperature differences among the elevation bands and what role this may play in beetle flight behavior. Bark beetles, regardless of species, showed no consistent elevational trend in abundance among the three bands. The higher abundances of Ips lecontei Swaine, I. calligraphus ponderosae Swaine, Dendroctonus frontalis Zimmerman, and D. brevicomis LeConte at low and middle elevations offset the greater abundance of I. knausi Swaine, D. adjunctus Blandford, D. approximatus Dietz, and D. valens LeConte at high elevations. I. pini (Say) and I. latidens LeConte were found in similar numbers across the three bands. Flight periodicity of several species varied among elevation bands. In general, the flight period shortened as elevation increased; flight initiated later and terminated earlier in the year. The timing, number, and magnitude of peaks in flight activity also varied among the elevation bands. These results suggest that abundance and flight seasonality of several bark beetles are related to elevation and the associated temperature differences. The implications of these results are discussed in relation to bark beetle management and population dynamics.

Mapping Near-Surface Salinization Using Long-wavelength AIRSAR

NASA Technical Reports Server (NTRS)

Paine, Jeffery G.

2003-01-01

In May 1999, NASA's Jet Propulsion Laboratory acquired airborne synthetic aperture radar (AIRSAR) data over the Hatchel and Montague Test Sites in Texas. We analyzed P- and L-band polarimetric radar data from these AIRSAR missions to assess whether AIRSAR could be used as a rapid and remote platform for screening large areas at risk for near-surface soil and water salinization. Ongoing geological, geophysical, and hydrological studies at the Hatchel Test Site in Runnels County and the Montague Test Site in Montague County have demonstrated the utility of high-resolution airborne electromagnetic (EM) induction in mapping electrical conductivity changes that accompany shallow natural and oil-field related salinization at these sites in the Colorado and Red River basins. We compared AIRSAR and airborne EM data quantitatively by (1) selecting representative flight lines from airborne EM surveys of the Hatchel and Montague sites, (2) extracting measurement locations and apparent conductivities at the highest available EM frequency, (3) identifying and extracting all P- and L-band backscatter intensities for all locations within 5 m of an airborne EM measurement, and (4) examining the spatial and magnitude relationships between apparent conductivity and all radar polarization and polarization-ratio combinations. For both test sites, backscatter intensity in all individual P- and L-band polarizations was slightly negatively correlated with apparent conductivity. In most modes this was manifested as a decrease in the range and magnitude of backscatter intensity as apparent conductivity increased. Select single-band and cross-band polarization ratios exhibited somewhat higher correlation with apparent conductivity by partly diminishing the dominance of the vegetation contribution to V backscatter intensity. The highest correlation with conductivity was obtained using the L-band vertical- to cross-polarization ratio, the P-band vertical- to L-band cross-polarization ratio, and the P-band vertical-to cross-polarization ratio. These correlations were higher for the more arid (and less electrically conductive) Hatchel Test Site than they were for the Montague Test Site.

Fully Integrated Biopotential Acquisition Analog Front-End IC

PubMed Central

Song, Haryong; Park, Yunjong; Kim, Hyungseup; Ko, Hyoungho

2015-01-01

A biopotential acquisition analog front-end (AFE) integrated circuit (IC) is presented. The biopotential AFE includes a capacitively coupled chopper instrumentation amplifier (CCIA) to achieve low input referred noise (IRN) and to block unwanted DC potential signals. A DC servo loop (DSL) is designed to minimize the offset voltage in the chopper amplifier and low frequency respiration artifacts. An AC coupled ripple rejection loop (RRL) is employed to reduce ripple due to chopper stabilization. A capacitive impedance boosting loop (CIBL) is designed to enhance the input impedance and common mode rejection ratio (CMRR) without additional power consumption, even under an external electrode mismatch. The AFE IC consists of two-stage CCIA that include three compensation loops (DSL, RRL, and CIBL) at each CCIA stage. The biopotential AFE is fabricated using a 0.18 µm one polysilicon and six metal layers (1P6M) complementary metal oxide semiconductor (CMOS) process. The core chip size of the AFE without input/output (I/O) pads is 10.5 mm2. A fourth-order band-pass filter (BPF) with a pass-band in the band-width from 1 Hz to 100 Hz was integrated to attenuate unwanted signal and noise. The overall gain and band-width are reconfigurable by using programmable capacitors. The IRN is measured to be 0.94 µVRMS in the pass band. The maximum amplifying gain of the pass-band was measured as 71.9 dB. The CIBL enhances the CMRR from 57.9 dB to 67 dB at 60 Hz under electrode mismatch conditions. PMID:26437404

Time-Resolved IR-Absorption Spectroscopy of Hot-Electron Dynamics in Satellite and Upper Conduction Bands in GaP

NASA Technical Reports Server (NTRS)

Cavicchia, M. A.; Alfano, R. R.

1995-01-01

The relaxation dynamics of hot electrons in the X6 and X7 satellite and upper conduction bands in GaP was directly measured by femtosecond UV-pump-IR-probe absorption spectroscopy. From a fit to the induced IR-absorption spectra the dominant scattering mechanism giving rise to the absorption at early delay times was determined to be intervalley scattering of electrons out of the X7 upper conduction-band valley. For long delay times the dominant scattering mechanism is electron-hole scattering. Electron transport dynamics of the upper conduction band of GaP has been time resolved.

Impact of salinity on element incorporation in two benthic foraminiferal species with contrasting magnesium contents

NASA Astrophysics Data System (ADS)

Geerken, Esmee; de Nooijer, Lennart Jan; van Dijk, Inge; Reichart, Gert-Jan

2018-04-01

Accurate reconstructions of seawater salinity could provide valuable constraints for studying past ocean circulation, the hydrological cycle and sea level change. Controlled growth experiments and field studies have shown the potential of foraminiferal Na / Ca as a direct salinity proxy. Incorporation of minor and trace elements in foraminiferal shell carbonate varies, however, greatly between species and hence extrapolating calibrations to other species needs validation by additional (culturing) studies. Salinity is also known to impact other foraminiferal carbonate-based proxies, such as Mg / Ca for temperature and Sr / Ca for sea water carbonate chemistry. Better constraints on the role of salinity on these proxies will therefore improve their reliability. Using a controlled growth experiment spanning a salinity range of 20 units and analysis of element composition on single chambers using laser ablation-Q-ICP-MS, we show here that Na / Ca correlates positively with salinity in two benthic foraminiferal species (Ammonia tepida and Amphistegina lessonii). The Na / Ca values differ between the two species, with an approximately 2-fold higher Na / Ca in A. lessonii than in A. tepida, coinciding with an offset in their Mg content ( ˜ 35 mmol mol-2 versus ˜ 2.5 mmol mol-1 for A. lessonii and A. tepida, respectively). Despite the offset in average Na / Ca values, the slopes of the Na / Ca-salinity regressions are similar between these two species (0.077 versus 0.064 mmol mol-1 change per salinity unit). In addition, Mg / Ca and Sr / Ca are positively correlated with salinity in cultured A. tepida but show no correlation with salinity for A. lessonii. Electron microprobe mapping of incorporated Na and Mg of the cultured specimens shows that within chamber walls of A. lessonii, Na / Ca and Mg / Ca occur in elevated bands in close proximity to the primary organic lining. Between species, Mg banding is relatively similar, even though Mg content is 10 times lower and that variation within the chamber wall is much less pronounced in A. tepida. In addition, Na banding is much less prominent in this species than it is in A. lessonii. Inter-species differences in element banding reported here are hypothesized to be caused by differences in biomineralization controls responsible for element uptake.

N-hexane neuropathy in offset printers.

PubMed Central

Chang, C M; Yu, C W; Fong, K Y; Leung, S Y; Tsin, T W; Yu, Y L; Cheung, T F; Chan, S Y

1993-01-01

In an offset printing factory with 56 workers, 20 (36%) developed symptomatic peripheral neuropathy due to exposure to n-hexane. Another 26 workers (46%) were found to have subclinical neuropathy. The initial change in the nerve conduction study was reduced amplitude of the sensory action potentials, followed by reduced amplitude of the motor action potentials, reduction in motor conduction velocities and increase in distal latencies. These changes indicate primary axonal degeneration with secondary demyelination. Sural nerve biopsy in a severe case showed giant axonal swellings due to accumulation of 10nm neurofilaments, myelin sheath attenuation and widening of nodal gaps. The development of neuropathy bore no direct relationship to the duration of exposure, hence factors such as individual susceptibility may be important. Optic neuropathy and CNS involvement were uncommon and autonomic neuropathy was not encountered. Images PMID:8505647

Electronic structure and p-type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

Effects of Conductor Baton Use on Band and Choral Musicians' Perceptions of Conductor Expressivity and Clarity

ERIC Educational Resources Information Center

Nápoles, Jessica; Silvey, Brian A.

2017-01-01

The purpose of this study was to examine participants' (college band and choral musicians, N = 143) perceptions of conductor clarity and expressivity after viewing band and choral directors conducting with or without a baton. One band and one choral conductor each prepared and conducted two excerpts of Guy Forbes's "O Nata Lux", a piece…

INSAR observations of the DPRK event series

NASA Astrophysics Data System (ADS)

Mellors, R. J.; Ford, S. R.; Walter, W. R.

2017-12-01

Interferometric synthetic aperture radar (INSAR) data have revealed signals associated with the recent DPRK events in 2016 and 2017. These signals include decorrelation and indications of subsidence. Both standard phase differences and amplitude offsets are calculated. We show results of INSAR analysis as conducted using C and L band data and investigate the causes of the decorrelation (e.g. subsidence, landslide, or spall) and compare the observed signal with numerical models of deformation and seismic observations. A time series approach is applied to constrain post-event deformation at the weeks to months' timescale. We compare the INSAR observations of the DPRK tests with previous observations of events at other source regions using ERS archive data, which revealed a variety of post-seismic signatures. The signatures are evaluated with respect to the known geology and causes, including long-term surface relaxation and possible groundwater/thermal effects. Particular focus is on the sites on Pahute and Rainier Mesa, which displayed long-term subsidence signals that extended for several years after the explosions. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. Lawrence Livermore National Security, LLC

Quantum confined Stark effects of single dopant in polarized hemispherical quantum dot: Two-dimensional finite difference approach and Ritz-Hassé variation method

NASA Astrophysics Data System (ADS)

El Harouny, El Hassan; Nakra Mohajer, Soukaina; Ibral, Asmaa; El Khamkhami, Jamal; Assaid, El Mahdi

2018-05-01

Eigenvalues equation of hydrogen-like off-center single donor impurity confined in polarized homogeneous hemispherical quantum dot deposited on a wetting layer, capped by insulated matrix and submitted to external uniform electric field is solved in the framework of the effective mass approximation. An infinitely deep potential is used to describe effects of quantum confinement due to conduction band offsets at surfaces where quantum dot and surrounding materials meet. Single donor ground state total and binding energies in presence of electric field are determined via two-dimensional finite difference approach and Ritz-Hassé variation principle. For the latter method, attractive coulomb correlation between electron and ionized single donor is taken into account in the expression of trial wave function. It appears that off-center single dopant binding energy, spatial extension and radial probability density are strongly dependent on hemisphere radius and single dopant position inside quantum dot. Influence of a uniform electric field is also investigated. It shows that Stark effect appears even for very small size dots and that single dopant energy shift is more significant when the single donor is near hemispherical surface.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Cheol Hyoun; Hee Kim, So; Gu Yun, Myeong

In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δmore » 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm{sup 2}/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.« less

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

A study on electrode gels for skin conductance measurements.

PubMed

Tronstad, Christian; Johnsen, Gorm Krogh; Grimnes, Sverre; Martinsen, Ørjan G

2010-10-01

Low-frequency skin conductance is used within several clinical applications and is mainly sensitive to sweating and the moisture content of the stratum corneum, but also how electrodes introduce changes in the electrical properties. Four electrode gels were investigated with regard to sorption characteristics and electrical properties. Skin conductance time series were collected from 18 test subjects during relaxation, exercise and recovery, wearing different pairs of electrodes contralaterally on the hypothenar and the T9 dermatome. Pressure test was applied on the T9 electrodes. Impedance frequency sweeps were taken on the T9 electrodes the same day and the next, parameterized to the Cole model. ANOVA on the initial skin conductance level change, exercise response amplitude, recovery offset and pressure-induced changes revealed significant differences among gel types. The wetter gels caused a higher positive level change, a greater response amplitude, larger recovery offset and greater pressure-induced artifacts compared to the solid gels. Sweating on the T9 site led to negative skin conductance responses for the wetter gels. Correlations were found between the desorption measurements and the initial skin conductance level change (hypothenar: R = 0.988 T9: R = 0.901) RM-ANOVA on the Cole parameters revealed a significant decrease in R(s) of the most resistive gel. Clinical implications are discussed.

VizieR Online Data Catalog: NGC253 near-infrared H2 emission (Rosenberg+,

NASA Astrophysics Data System (ADS)

Rosenberg, M. J. F.; van der Werf, P. P.; Israel, F. P.

2012-11-01

All observations were made with SINFONI at the ESO VLT. We observed in the H, and K bands using a spatial pixel scale of 0.25" corresponding to a field of view of 8" by 8" per frame and a spectral resolution of 2000, 3000 and 4000 respectively, which corresponds to a velocity resolution of 149.8, 99.9 and 74.9km/s. All science observations were taken in the ABA'nodding mode (300s of object, 300s of sky, 300s of object), where A' is slightly offset from A. The object exposures are aligned and averaged during the reconstruction of the data cube. The observations of NGC 253 were made in visitor mode on August 28th, 2005. In order to capture the full extent of the H2 emission, consecutive frames were taken in the K band moving further away from the center, along the disk until H2 was no longer detected. This resulted in 6 separate pointings. Since there are also H2 transitions in the H band, a similar strategy was used, resulting in 4 separate pointings. We used the standard reduction techniques of the SINFONI pipeline on all observations, including corrections for flat field, dark current, nonlinearity of pixels, distortion, and wavelength calibration. We obtained the flux calibration and atmospheric corrections from observations of a standard star, namely HR 2058 in the H band and HD 20001 in the K band (2 data files).

COMPARING MID-INFRARED GLOBULAR CLUSTER COLORS WITH POPULATION SYNTHESIS MODELS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barmby, P.; Jalilian, F. F.

2012-04-15

Several population synthesis models now predict integrated colors of simple stellar populations in the mid-infrared bands. To date, the models have not been extensively tested in this wavelength range. In a comparison of the predictions of several recent population synthesis models, the integrated colors are found to cover approximately the same range but to disagree in detail, for example, on the effects of metallicity. To test against observational data, globular clusters (GCs) are used as the closest objects to idealized groups of stars with a single age and single metallicity. Using recent mass estimates, we have compiled a sample ofmore » massive, old GCs in M31 which contain enough stars to guard against the stochastic effects of small-number statistics, and measured their integrated colors in the Spitzer/IRAC bands. Comparison of the cluster photometry in the IRAC bands with the model predictions shows that the models reproduce the cluster colors reasonably well, except for a small (not statistically significant) offset in [4.5] - [5.8]. In this color, models without circumstellar dust emission predict bluer values than are observed. Model predictions of colors formed from the V band and the IRAC 3.6 and 4.5 {mu}m bands are redder than the observed data at high metallicities and we discuss several possible explanations. In agreement with model predictions, V - [3.6] and V - [4.5] colors are found to have metallicity sensitivity similar to or slightly better than V - K{sub s}.« less

Apollo 9 multiband photography experiment S065

NASA Technical Reports Server (NTRS)

Schowengerdt, R. A.; Slater, P. N.

1972-01-01

Fourier analysis was applied to microdensitometer scans of a selected region of one SO65 frame in each of the three black-and-white bands. The approach was unique because a somewhat arbitrary section of the image was used and not limited to available targets as in edge analysis. Comparison of duplicates and calculation of absolute SO65 MTF were done by applying linear systems theory to the spatial spectra of the image scans. It was found that the duplication process was nonlinear and resulted in general amplification of spatial frequency modulation. However, the increase in modulation was offset by a corresponding increase in the granularity of the copies. The amount of increase seemed to be related to the initial granularity, but a direct relationship was not verified. Band-to-band comparison of image quality was achieved in the form of signal-to-noise ratio curves as a function of spatial frequency for each band. From this standpoint the DD band was an order of magnitude better than the other two. These were several factors that restricted the analysis of the Apollo 9 imagery. Among these were the lack of precise sensitometric and optical system data on the high altitude photography. In addition it was determined that there was only one simultaneous pair of high altitude and SO65 frames. Finally, the original SO65 photography was not available for scanning (for obvious reasons), thus eliminating a reference base for granularity and SO65 MTF determination.

Spatially offset Raman spectroscopy for explosives detection through difficult (opaque) containers

NASA Astrophysics Data System (ADS)

Maskall, Guy T.; Bonthron, Stuart; Crawford, David

2013-10-01

With the continuing threat to aviation security from homemade explosive devices, the restrictions on taking a volume of liquid greater than 100 ml onto an aircraft remain in place. From January 2014, these restrictions will gradually be reduced via a phased implementation of technological screening of Liquids, Aerosols and Gels (LAGs). Raman spectroscopy offers a highly sensitive, and specific, technique for the detection and identification of chemicals. Spatially Offset Raman Spectroscopy (SORS), in particular, offers significant advantages over conventional Raman spectroscopy for detecting and recognizing contents within optically challenging (Raman active) containers. Containers vary enormously in their composition; glass type, plastic type, thickness, reflectance, and pigmentation are all variable and cause an infinite range of absorbances, fluorescence backgrounds, Rayleigh backscattered laser light, and container Raman bands. In this paper we show that the data processing chain for Cobalt Light Systems' INSIGHT100 bottlescanner is robust to such variability. We discuss issues of model selection for the detection stage and demonstrate an overall detection rate across a wide range of threats and containers of 97% with an associated false alarm rate of 0.1% or lower.

Characterization and Physics-Based Modeling of Electrochemical Memristors

DTIC Science & Technology

2015-11-16

conducting films that result from electrical or optical stress. Model parameters and electrical characteristics were obtained from and validated...x- ray scattering, Conductive Bridge Random Access Memory 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT 18. NUMBER OF PAGES 19a. NAME...Calculated DOS for GeSe2 in valence band and (b) conduction band .................. 43  Figure 45. DFT band structure for crystalline GeSe2

Images of the Extended Outer Regions of the Debris Ring around HR 4796 A

NASA Technical Reports Server (NTRS)

Thalmann, C.; Janson, M.; Buenzli, E.; Brandt, T. D.; Wisniewski, J. P.; Moro-Martin, A.; Usuda, T.; Schneider, G.; Carson, J.; McElwain, M. W.;

Design issues for optimum solar cell configuration

NASA Astrophysics Data System (ADS)

Kumar, Atul; Thakur, Ajay D.

2018-05-01

A computer based simulation of solar cell structure is performed to study the optimization of pn junction configuration for photovoltaic action. The fundamental aspects of photovoltaic action viz, absorption, separation collection, and their dependence on material properties and deatails of device structures is discussed. Using SCAPS 1D we have simulated the ideal pn junction and shown the effect of band offset and carrier densities on solar cell performance. The optimum configuration can be achieved by optimizing transport of carriers in pn junction under effect of field dependent recombination (tunneling) and density dependent recombination (SRH, Auger) mechanisms.

Antenna Characterization for the Wideband Instrument for Snow Measurements

NASA Technical Reports Server (NTRS)

Lambert, Kevin M.; Miranda, Felix A.; Romanofsky, Robert R.; Durham, Timothy E.; Vanhille, Kenneth J.

2015-01-01

Experimental characterization of the antenna for the Wideband Instrument for Snow Measurements (WISM) under development for the NASA Earth Science Technology Office (ESTO) Instrument Incubator Program (IIP), is discussed. A current sheet antenna, consisting of a small, 6x6 element, dual-linear polarized array with integrated beamformer, feeds an offset parabolic reflector, enabling WISM operation over an 8 to 40 GHz frequency band. An overview of the test program implemented for both the feed and the reflector antenna is given along with select results for specific frequencies utilized by the radar and radiometric sensors of the WISM.

Antenna Characterization for the Wideband Instrument for Snow Measurements (WISM)

NASA Technical Reports Server (NTRS)

Lambert, Kevin M.; Miranda, Felix A.; Romanofsky, Robert R.; Durham, Timothy E.; Vanhille, Kenneth J.

2015-01-01

Experimental characterization of the antenna for the Wideband Instrument for Snow Measurement (WISM) under development for the NASA Earth Science Technology Office (ESTO) Instrument Incubator Program (IIP), is discussed. A current sheet antenna, consisting of a small, 6x6 element, dual-linear polarized array with integrated beamformer, feeds an offset parabolic reflector, enabling WISM operation over an 8 to 40 GHz frequency band. An overview of the test program implemented for both the feed and the reflector antenna is given along with select results for specific frequencies utilized by the radar and radiometric sensors of the WISM.

Optics Design for the U.S. SKA Technology Development Project Design Verification Antenna

NASA Technical Reports Server (NTRS)

Imbriale, W. A.; Baker, L.; Cortes-Medellin, G.

2012-01-01

The U.S. design concept for the Square Kilometer Array (SKA) program is based on utilizing a large number of 15 meter dish antennas. The Technology Development Project (TDP) is planning to design and build the first of these antennas to provide a demonstration of the technology and a solid base on which to estimate costs. This paper describes the performance of the selected optics design. It is a dual-shaped offset Gregorian design with a feed indexer that can accommodate corrugated horns, wide band single pixel feeds or phased array feeds.

Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

PubMed Central

Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H. Q.

2016-01-01

We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula. PMID:27307081

Spectral variability of plagioclase-mafic mixtures (3): Quantitative analysis applying the MGM algorithm

NASA Astrophysics Data System (ADS)

Serventi, Giovanna; Carli, Cristian; Sgavetti, Maria

2015-07-01

Among the techniques to detect planet's mineralogical composition remote sensing, visible and near-infrared (VNIR) reflectance spectroscopy is a powerful tool, because crystal field absorption bands are related to particular transitional metals in well-defined crystal structures, e.g., Fe2+ in M1 and M2 sites of olivine (OL) or pyroxene (PX). Although OL, PX and their mixtures have been widely studied, plagioclase (PL), considered a spectroscopically transparent mineral, has been poorly analyzed. In this work we quantitatively investigate the influence of plagioclase absorption band on the absorption bands of Fe, Mg minerals using the Modified Gaussian Model - MGM (Sunshine, J.M. et al. [1990]. J. Geophys. Res. 95, 6955-6966). We consider three plagioclase compositions of varying FeO wt.% contents and five mafic end-members (1) 56% orthopyroxene and 44% clinopyroxene, (2) 28% olivine and 72% orthopyroxene, (3) 30% orthopyroxene and 70% olivine, (4) 100% olivine and (5) 100% orthopyroxene, at two different particle sizes. The spectral parameters considered here are: band depth, band center, band width, c0 (the continuum intercept) and c1 (the continuum offset). In particular, we show the variation of the plagioclase and composite (plagioclase-olivine) band spectral parameters versus the volumetric iron content related to the plagioclase abundance in mixtures. Generally, increasing the vol. FeO% due to the PL: (1) 1250 nm band deepens with linear trend in mixtures with pyroxenes, while it decreases in mixtures with olivine, with trend shifting from parabolic to linear increasing the olivine content in end-member; (2) 1250 nm band center moves towards longer wavelengths with linear trend in pyroxene-rich mixtures and parabolic trend in olivine-rich mixtures; and (3) 1250 nm band clearly widens with linear trend in olivine-free mixtures, while the widening is only slight in olivine-rich mixtures. We also outline how spectral parameters can be ambiguous leading to an incorrect mineralogical interpretation. Furthermore, we show the presence of an asymmetry of the plagioclase band towards the IR region, resolvable adding a Gaussian in the 1600-1800 nm spectral region.

2MASS J00423991+3017515: An AGN On The Run?

NASA Astrophysics Data System (ADS)

Hogg, James

2016-10-01

We have discovered a peculiar AGN, 2MASS J00423991+3017515, in a local (z=0.14), disturbed galaxy whose optical spectrum has multiple broad lines that are consistently offset from the narrow line emission and host galaxy absorption by 1530 km/s. The morphology of the host galaxy and spectral properties thus suggest this AGN may be a recoiling supermassive black hole (SMBH). Gravitational-wave recoil kicks result from the coalescence of two SMBHs and have implications for the early growth of high-redshift quasars and SMBH-galaxy co-evolution. We propose high-resolution imaging in the NIR, optical, and UV with the WFC3 camera on Hubble and high-resolution X-ray imaging and spectral follow-ups with the ACIS camera on Chandra to determine if the source of the kinematically-offset broad line emission is also spatially offset from the nucleus of the host galaxy. We request 3 orbits with Hubble and 8 ksec with Chandra to conduct these follow-up observations. If a single, spatially offset AGN is detected, this source will be strongest candidate for a recoiling AGN candidate discovered to date, providing a new, indirect constraint on SMBH spin evolution and merger rates.

Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: The case of M2O3(M =Al ,Ga ,In )

NASA Astrophysics Data System (ADS)

Sabino, Fernando P.; Besse, Rafael; Oliveira, Luiz Nunes; Wei, Su-Huai; Da Silva, Juarez L. F.

2015-11-01

Good transparent conducting oxides (TCOs), such as In2O3 :Sn (ITO), usually combine large optical band gaps, essential for high transparency, with relatively small fundamental band gaps due to low conduction-band minima, which favor n -type doping and enhance the electrical conductivity. It has been understood that the optical band gaps are wider than the fundamental band gaps because optical transitions between the band-edge states are forbidden. The mechanism blocking such transitions, which can play a crucial role in the designing of alternative TCOs, nonetheless remains obscure. Here, based on first-principles density functional theory calculations and symmetry analysis of three oxides, M2O3 (M =Al ,Ga ,In ), we identify the physical origin of the gap disparities. Three conditions are necessary: (1) the crystal structure must have global inversion symmetry; (2) in order to belong to the Ag or A1 g irreducible representations, the states at the conduction-band minimum must have cation and oxygen s character; (3) in order to have g parity, the oxygen p orbitals constituting the states near the valence-band maximum must be strongly coupled to the cation d orbitals. Under these conditions, optical excitations across the fundamental gap will be forbidden. The three criteria explain the trends in the M2O3 (M =Al,Ga,In) sequence, in particular, explaining why In2O3 in the bixbyite structure yields the highest figure of merit. Our study provides guidelines expected to be instrumental in the search for new TCO materials.

Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

NASA Astrophysics Data System (ADS)

Mitrovic, I. Z.; Weerakkody, A. D.; Sedghi, N.; Ralph, J. F.; Hall, S.; Dhanak, V. R.; Luo, Z.; Beeby, S.

2018-01-01

We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device.

Ultraviolet photoelectron spectroscopy reveals energy-band dispersion for π-stacked 7,8,15,16-tetraazaterrylene thin films in a donor–acceptor bulk heterojunction

NASA Astrophysics Data System (ADS)

Aghdassi, Nabi; Wang, Qi; Ji, Ru-Ru; Wang, Bin; Fan, Jian; Duhm, Steffen

2018-05-01

7,8,15,16-tetraazaterrylene (TAT) thin films grown on highly oriented pyrolytic graphite (HOPG) substrates were studied extensively with regard to their intrinsic and interfacial electronic properties by means of ultraviolet photoelectron spectroscopy (UPS). Merely weak substrate–adsorbate interaction occurs at the TAT/HOPG interface, with interface energetics being only little affected by the nominal film thickness. Photon energy-dependent UPS performed perpendicular to the molecular planes of TAT multilayer films at room temperature clearly reveals band-like intermolecular dispersion of the TAT highest occupied molecular orbital (HOMO) energy. Based on a comparison with a tight-binding model, a relatively narrow bandwidth of 54 meV is derived, which points to the presence of an intermediate regime between hopping and band-like hole transport. Upon additional deposition of 2,2‧:5‧,2″:5″,2″‧-quaterthiophene (4T), a 4T:TAT donor–acceptor bulk heterojunction with a considerable HOMO-level offset at the donor–acceptor interface is formed. The 4T:TAT bulk heterojunction likewise exhibits intermolecular dispersion of the TAT HOMO energy, yet with a significant decreased bandwidth.

The design of traffic signal coordinated control

NASA Astrophysics Data System (ADS)

Guo, Xueting; Sun, Hongsheng; Wang, Xifu

2017-05-01

Traffic as the tertiary industry is an important pillar industry to support the normal development of the economy. But now China's road traffic development and economic development has shown a great imbalance and fault phenomenon, which greatly inhibited the normal development of China's economy. Now in many large and medium-sized cities in China are implementing green belt construction. The so-called green band is when the road conditions to meet the conditions for the establishment of the green band, the sections of the intersection of several planning to a traffic coordination control system, so that when the driver at a specific speed can be achieved without stopping the continuous Through the intersection. Green belt can effectively reduce the delay and queuing length of vehicle driving, the normal function of urban roads and reduce the economic losses caused by traffic congestion is a great help. In this paper, the theoretical basis of the design of the coordinated control system is described. Secondly, the green time offset is calculated by the analytic method and the green band is established. And then the VISSIM software is used to simulate the traffic system before and after the improvement. Finally, the results of the two simulations are compared.

Hydrogen-induced strain localisation in oxygen-free copper in the initial stage of plastic deformation

NASA Astrophysics Data System (ADS)

Yagodzinskyy, Yuriy; Malitckii, Evgenii; Tuomisto, Filip; Hänninen, Hannu

2018-03-01

Single crystals of oxygen-free copper oriented to easy glide of dislocations were tensile tested in order to study the hydrogen effects on the strain localisation in the form of slip bands appearing on the polished specimen surface under tensile straining. It was found that hydrogen increases the plastic flow stress in Stage I of deformation. The dislocation slip localisation in the form of slip bands was observed and analysed using an online optical monitoring system and atomic force microscopy. The fine structure of the slip bands observed with AFM shows that they consist of a number of dislocation slip offsets which spacing in the presence of hydrogen is markedly reduced as compared to that in the hydrogen-free specimens. The tensile tests and AFM observations were accompanied with positron annihilation lifetime measurements showing that straining of pure copper in the presence of hydrogen results in free volume generation in the form of vacancy complexes. Hydrogen-enhanced free-volume generation is discussed in terms of hydrogen interactions with edge dislocation dipoles forming in double cross-slip of screw dislocations in the initial stage of plastic deformation of pure copper.

Multi-band infrared camera systems

NASA Astrophysics Data System (ADS)

Davis, Tim; Lang, Frank; Sinneger, Joe; Stabile, Paul; Tower, John

1994-12-01

The program resulted in an IR camera system that utilizes a unique MOS addressable focal plane array (FPA) with full TV resolution, electronic control capability, and windowing capability. Two systems were delivered, each with two different camera heads: a Stirling-cooled 3-5 micron band head and a liquid nitrogen-cooled, filter-wheel-based, 1.5-5 micron band head. Signal processing features include averaging up to 16 frames, flexible compensation modes, gain and offset control, and real-time dither. The primary digital interface is a Hewlett-Packard standard GPID (IEEE-488) port that is used to upload and download data. The FPA employs an X-Y addressed PtSi photodiode array, CMOS horizontal and vertical scan registers, horizontal signal line (HSL) buffers followed by a high-gain preamplifier and a depletion NMOS output amplifier. The 640 x 480 MOS X-Y addressed FPA has a high degree of flexibility in operational modes. By changing the digital data pattern applied to the vertical scan register, the FPA can be operated in either an interlaced or noninterlaced format. The thermal sensitivity performance of the second system's Stirling-cooled head was the best of the systems produced.

Periodic dielectric structure for production of photonic band gap and devices incorporating the same

DOEpatents

Ho, Kai-Ming; Chan, Che-Ting; Soukoulis, Costas

1994-08-02

A periodic dielectric structure which is capable of producing a photonic band gap and which is capable of practical construction. The periodic structure is formed of a plurality of layers, each layer being formed of a plurality of rods separated by a given spacing. The material of the rods contrasts with the material between the rods to have a refractive index contrast of at least two. The rods in each layer are arranged with their axes parallel and at a given spacing. Adjacent layers are rotated by 90.degree., such that the axes of the rods in any given layer are perpendicular to the axes in its neighbor. Alternating layers (that is, successive layers of rods having their axes parallel such as the first and third layers) are offset such that the rods of one are about at the midpoint between the rods of the other. A four-layer periocity is thus produced, and successive layers are stacked to form a three-dimensional structure which exhibits a photonic band gap. By virtue of forming the device in layers of elongate members, it is found that the device is susceptible of practical construction.

Modeling GaInAs/GaAsSb type-II superlattices grown on InP for optoelectronic applications

NASA Astrophysics Data System (ADS)

Kitchin, Matt R.; Shaw, Mike J.; Corbin, Elizabeth A.; Hagon, Jerry P.; Jaros, Milan

2001-07-01

We present a microscopic model of emission in a series of strain-compensated GaInAs/GaAsSb type-II superlattice structures with infrared applications. The need for an improved understanding of the optoelectronic characteristics of these systems, both in terms of basic physics and technological applications, is identified. The band lineup in heterostructures containing alloys is frequently determined using the Model Solid theory with linear interpolation of input parameters between those of the constituent compounds. However, for the present superlattices, this approach did not provide a description of the band lineups which was consistent with experimental data. Band lineups were subsequently fitted to achieve spectral cutoff measurements, and we found that these offsets were in better agreement with experimental data than those predicted using the above method. On using these lineups as input to our empirical pseudopotential model, lineshapes exhibiting good agreement with experiment were computed. We analyze the role played by wave-function confinement in determining spectral features and investigate the potentially degrading effects of Auger recombination on device performance. The results of this study advance the characterization of these systems, indicating links between their microscopic properties and optical spectra.

Ultraviolet photoelectron spectroscopy reveals energy-band dispersion for π-stacked 7,8,15,16-tetraazaterrylene thin films in a donor-acceptor bulk heterojunction.

PubMed

Aghdassi, Nabi; Wang, Qi; Ji, Ru-Ru; Wang, Bin; Fan, Jian; Duhm, Steffen

2018-05-11

7,8,15,16-tetraazaterrylene (TAT) thin films grown on highly oriented pyrolytic graphite (HOPG) substrates were studied extensively with regard to their intrinsic and interfacial electronic properties by means of ultraviolet photoelectron spectroscopy (UPS). Merely weak substrate-adsorbate interaction occurs at the TAT/HOPG interface, with interface energetics being only little affected by the nominal film thickness. Photon energy-dependent UPS performed perpendicular to the molecular planes of TAT multilayer films at room temperature clearly reveals band-like intermolecular dispersion of the TAT highest occupied molecular orbital (HOMO) energy. Based on a comparison with a tight-binding model, a relatively narrow bandwidth of 54 meV is derived, which points to the presence of an intermediate regime between hopping and band-like hole transport. Upon additional deposition of 2,2':5',2″:5″,2″'-quaterthiophene (4T), a 4T:TAT donor-acceptor bulk heterojunction with a considerable HOMO-level offset at the donor-acceptor interface is formed. The 4T:TAT bulk heterojunction likewise exhibits intermolecular dispersion of the TAT HOMO energy, yet with a significant decreased bandwidth.

Measurements of Ultra-Stable Oscillator (USO) Allan Deviations in Space

NASA Technical Reports Server (NTRS)

Enzer, Daphna G.; Klipstein, William M.; Wang, Rabi T.; Dunn, Charles E.

2013-01-01

Researchers have used data from the GRAIL mission to the Moon to make the first in-flight verification of ultra-stable oscillators (USOs) with Allan deviation below 10 13 for 1-to-100-second averaging times. USOs are flown in space to provide stable timing and/or navigation signals for a variety of different science and programmatic missions. The Gravity Recovery and Interior Laboratory (GRAIL) mission is flying twin spacecraft, each with its own USO and with a Ka-band crosslink used to measure range fluctuations. Data from this crosslink can be combined in such a way as to give the relative time offsets of the two spacecrafts USOs and to calculate the Allan deviation to describe the USOs combined performance while orbiting the Moon. Researchers find the first direct in-space Allan deviations below 10(exp -13) for 1-to-100-second averaging times comparable to pre-launch data, and better than measurements from ground tracking of an X-band carrier coherent with the USO. Fluctuations in Earth s atmosphere limit measurement performance in direct-to-Earth links. Inflight USO performance verification was also performed for GRAIL s parent mission, the Gravity Recovery and Climate Experiment (GRACE), using both Kband and Ka-band crosslinks.

Energetics of discrete selectivity bands and mutation-induced transitions in the calcium-sodium ion channels family.

PubMed

Kaufman, I; Luchinsky, D G; Tindjong, R; McClintock, P V E; Eisenberg, R S

2013-11-01

We use Brownian dynamics (BD) simulations to study the ionic conduction and valence selectivity of a generic electrostatic model of a biological ion channel as functions of the fixed charge Q(f) at its selectivity filter. We are thus able to reconcile the discrete calcium conduction bands recently revealed in our BD simulations, M0 (Q(f)=1e), M1 (3e), M2 (5e), with a set of sodium conduction bands L0 (0.5e), L1 (1.5e), thereby obtaining a completed pattern of conduction and selectivity bands vs Q(f) for the sodium-calcium channels family. An increase of Q(f) leads to an increase of calcium selectivity: L0 (sodium-selective, nonblocking channel) → M0 (nonselective channel) → L1 (sodium-selective channel with divalent block) → M1 (calcium-selective channel exhibiting the anomalous mole fraction effect). We create a consistent identification scheme where the L0 band is putatively identified with the eukaryotic sodium channel The scheme created is able to account for the experimentally observed mutation-induced transformations between nonselective channels, sodium-selective channels, and calcium-selective channels, which we interpret as transitions between different rows of the identification table. By considering the potential energy changes during permeation, we show explicitly that the multi-ion conduction bands of calcium and sodium channels arise as the result of resonant barrierless conduction. The pattern of periodic conduction bands is explained on the basis of sequential neutralization taking account of self-energy, as Q(f)(z,i)=ze(1/2+i), where i is the order of the band and z is the valence of the ion. Our results confirm the crucial influence of electrostatic interactions on conduction and on the Ca(2+)/Na(+) valence selectivity of calcium and sodium ion channels. The model and results could be also applicable to biomimetic nanopores with charged walls.

Energetics of discrete selectivity bands and mutation-induced transitions in the calcium-sodium ion channels family

NASA Astrophysics Data System (ADS)

Kaufman, I.; Luchinsky, D. G.; Tindjong, R.; McClintock, P. V. E.; Eisenberg, R. S.

2013-11-01

We use Brownian dynamics (BD) simulations to study the ionic conduction and valence selectivity of a generic electrostatic model of a biological ion channel as functions of the fixed charge Qf at its selectivity filter. We are thus able to reconcile the discrete calcium conduction bands recently revealed in our BD simulations, M0 (Qf=1e), M1 (3e), M2 (5e), with a set of sodium conduction bands L0 (0.5e), L1 (1.5e), thereby obtaining a completed pattern of conduction and selectivity bands vs Qf for the sodium-calcium channels family. An increase of Qf leads to an increase of calcium selectivity: L0 (sodium-selective, nonblocking channel) → M0 (nonselective channel) → L1 (sodium-selective channel with divalent block) → M1 (calcium-selective channel exhibiting the anomalous mole fraction effect). We create a consistent identification scheme where the L0 band is putatively identified with the eukaryotic sodium channel The scheme created is able to account for the experimentally observed mutation-induced transformations between nonselective channels, sodium-selective channels, and calcium-selective channels, which we interpret as transitions between different rows of the identification table. By considering the potential energy changes during permeation, we show explicitly that the multi-ion conduction bands of calcium and sodium channels arise as the result of resonant barrierless conduction. The pattern of periodic conduction bands is explained on the basis of sequential neutralization taking account of self-energy, as Qf(z,i)=ze(1/2+i), where i is the order of the band and z is the valence of the ion. Our results confirm the crucial influence of electrostatic interactions on conduction and on the Ca2+/Na+ valence selectivity of calcium and sodium ion channels. The model and results could be also applicable to biomimetic nanopores with charged walls.

Numerical Modeling of Active Flow Control in a Boundary Layer Ingesting Offset Inlet

NASA Technical Reports Server (NTRS)

Allan, Brian G.; Owens, Lewis R.; Berrier, Bobby L.

2004-01-01

This investigation evaluates the numerical prediction of flow distortion and pressure recovery for a boundary layer ingesting offset inlet with active flow control devices. The numerical simulations are computed using a Reynolds averaged Navier-Stokes code developed at NASA. The numerical results are validated by comparison to experimental wind tunnel tests conducted at NASA Langley Research Center at both low and high Mach numbers. Baseline comparisons showed good agreement between numerical and experimental results. Numerical simulations for the inlet with passive and active flow control also showed good agreement at low Mach numbers where experimental data has already been acquired. Numerical simulations of the inlet at high Mach numbers with flow control jets showed an improvement of the flow distortion. Studies on the location of the jet actuators, for the high Mach number case, were conducted to provide guidance for the design of a future experimental wind tunnel test.

Assessing XCTD Fall Rate Errors using Concurrent XCTD and CTD Profiles in the Southern Ocean

NASA Astrophysics Data System (ADS)

Millar, J.; Gille, S. T.; Sprintall, J.; Frants, M.

2010-12-01

Refinements in the fall rate equation for XCTDs are not as well understood as those for XBTs, due in part to the paucity of concurrent and collocated XCTD and CTD profiles. During February and March 2010, the Diapycnal and Isopycnal Mixing Experiment in the Southern Ocean (DIMES) conducted 31 collocated 1000-meter XCTD and CTD casts in the Drake Passage. These XCTD/CTD profile pairs are closely matched in space and time, with a mean distance between casts of 1.19 km and a mean lag time of 39 minutes. The profile pairs are well suited to address the XCTD fall rate problem specifically in higher latitude waters, where existing fall rate corrections have rarely been assessed. Many of these XCTD/CTD profile pairs reveal an observable depth offset in measurements of both temperature and conductivity. Here, the nature and extent of this depth offset is evaluated.

Friction Stir Welding of Tapered Thickness Welds Using an Adjustable Pin Tool

NASA Technical Reports Server (NTRS)

Adams, Glynn; Venable, Richard; Lawless, Kirby

2003-01-01

Friction stir welding (FSW) can be used for joining weld lands that vary in thickness along the length of the weld. An adjustable pin tool mechanism can be used to accomplish this in a single-pass, full-penetration weld by providing for precise changes in the pin length relative to the shoulder face during the weld process. The difficulty with this approach is in accurately adjusting the pin length to provide a consistent penetration ligament throughout the weld. The weld technique, control system, and instrumentation must account for mechanical and thermal compliances of the tooling system to conduct tapered welds successfully. In this study, a combination of static and in-situ measurements, as well as active control, is used to locate the pin accurately and maintain the desired penetration ligament. Frictional forces at the pin/shoulder interface were a source of error that affected accurate pin position. A traditional FSW pin tool design that requires a lead angle was used to join butt weld configurations that included both constant thickness and tapered sections. The pitch axis of the tooling was fixed throughout the weld; therefore, the effective lead angle in the tapered sections was restricted to within the tolerances allowed by the pin tool design. The sensitivity of the FSW process to factors such as thickness offset, joint gap, centerline offset, and taper transition offset were also studied. The joint gap and the thickness offset demonstrated the most adverse affects on the weld quality. Two separate tooling configurations were used to conduct tapered thickness welds successfully. The weld configurations included sections in which the thickness decreased along the weld, as well as sections in which the thickness increased along the weld. The data presented here include weld metallography, strength data, and process load data.

Multiband Spectral-Spatial RF Excitation for Hyperpolarized [2-13C]Dihydroxyacetone 13C-MR Metabolism Studies

PubMed Central

Marco-Rius, Irene; Cao, Peng; von Morze, Cornelius; Merrit, Matthew; Moreno, Karlos X; Chang, Gene-Yuan; Ohliger, Michael A.; Pearce, David; Kurhanewicz, John; Larson, Peder E. Z.; Vigneron, Daniel B.

2016-01-01

Purpose To develop a specialized multislice, single-acquisition approach to detect the metabolites of hyperpolarized [2-13C]dihydroxyacetone (DHAc) to probe gluconeogenesis in vivo, which have a broad 144 ppm spectral range (~4.6 KHz at 3T). A novel multiband RF excitation pulse was designed for independent flip angle control over 5-6 spectral-spatial (SPSP) excitation bands, each corrected for chemical shift misregistration effects. Methods Specialized multi-band SPSP RF pulses were designed, tested and applied to investigate hyperpolarized [2-13C]DHAc metabolism in kidney and liver of fasted rats with dynamic 13C-MRS and an optimal flip angle scheme. For comparison, experiments were also performed with narrow-band slice-selective RF pulses and a sequential change of the frequency offset to cover the five frequency bands of interest. Results The SPSP pulses provided a controllable spectral profile free of baseline distortion with improved signal to noise of the metabolite peaks, allowing for quantification of the metabolic products. We observed organ-specific differences in DHAc metabolism. There was 2-5 times more [2-13C]phosphoenolpyruvate and about 19 times more [2-13C]glycerol 3-phosphate in the liver than in the kidney. Conclusion A multiband SPSP RF pulse covering a spectral range over 144 ppm enabled in vivo characterization of HP [2-13C]dihydroxyacetone metabolism in rat liver and kidney. PMID:27017966

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

2018-01-01

2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

Architecture and design of optical path networks utilizing waveband virtual links

NASA Astrophysics Data System (ADS)

Ito, Yusaku; Mori, Yojiro; Hasegawa, Hiroshi; Sato, Ken-ichi

2016-02-01

We propose a novel optical network architecture that uses waveband virtual links, each of which can carry several optical paths, to directly bridge distant node pairs. Future photonic networks should not only transparently cover extended areas but also expand fiber capacity. However, the traversal of many ROADM nodes impairs the optical signal due to spectrum narrowing. To suppress the degradation, the bandwidth of guard bands needs to be increased, which degrades fiber frequency utilization. Waveband granular switching allows us to apply broader pass-band filtering at ROADMs and to insert sufficient guard bands between wavebands with minimum frequency utilization offset. The scheme resolves the severe spectrum narrowing effect. Moreover, the guard band between optical channels in a waveband can be minimized, which increases the number of paths that can be accommodated per fiber. In the network, wavelength path granular routing is done without utilizing waveband virtual links, and it still suffers from spectrum narrowing. A novel network design algorithm that can bound the spectrum narrowing effect by limiting the number of hops (traversed nodes that need wavelength path level routing) is proposed in this paper. This algorithm dynamically changes the waveband virtual link configuration according to the traffic distribution variation, where optical paths that need many node hops are effectively carried by virtual links. Numerical experiments demonstrate that the number of necessary fibers is reduced by 23% compared with conventional optical path networks.

Identification of Geomorphic Conditions Favoring Preservation of Multiple Individual Displacements Across Transform Faults

NASA Astrophysics Data System (ADS)

Williams, P. L.; Phillips, D. A.; Bowles-Martinez, E.; Masana, E.; Stepancikova, P.

2010-12-01

Terrestrial and airborne LiDAR data, and low altitude aerial photography have been utilized in conjunction with field work to identify and map single and multiple-event stream-offsets along all strands of the San Andreas fault in the Coachella Valley. Goals of the work are characterizing the range of displacements associated with the fault’s prehistoric surface ruptures, evaluating patterns of along-fault displacement, and disclosing processes associated with the prominent Banning-Mission Creek fault junction. Preservation offsets is associated with landscape conditions including: (1) well-confined and widely spaced source streams up-slope of the fault; (2) persistent geomorphic surfaces below the fault; (3) slope directions oriented approximately perpendicular to the fault. Notably, a pair of multiple-event offset sites have been recognized in coarse fan deposits below the Mission Creek fault near 1000 Palms oasis. Each of these sites is associated with a single source drainage oriented approximately perpendicular to the fault, and preserves a record of individual fault displacements affecting the southern portion of the Mission Creek branch of the San Andreas fault. The two sites individually record long (>10 event) slip-per-event histories. Documentation of the sites indicates a prevalence of moderate displacements and a small number of large offsets. This is consistent with evidence developed in systematic mapping of individual and multiple event stream offsets in the area extending 70 km south to Durmid Hill. Challenges to site interpretation include the presence of closely spaced en echelon fault branches and indications of stream avulsion in the area of the modern fault crossing. Conversely, strong bar and swale topography produce high quality offset indicators that can be identified across en echelon branches in most cases. To accomplish the detailed mapping needed to fully recover the complex yet well-preserved geomorphic features under investigation, a program of terrestrial laser scanning (TLS) was conducted at the 1000 Palms oasis stream offset sites. Data products and map interpretations will be presented along with initial applications of the study to characterizing San Andreas fault rupture hazard. Continuing work will seek to more fully populate the dataset of larger offsets, evaluate means to objectively date the larger offsets, and, as completely as possible, to characterize magnitudes of past surface ruptures of the San Andreas fault in the Coachella Valley.

Offset of pharmacodynamic effects and safety of remifentanil in intensive care unit patients with various degrees of renal impairment

PubMed Central

Breen, Des; Wilmer, Alexander; Bodenham, Andrew; Bach, Vagn; Bonde, Jan; Kessler, Paul; Albrecht, Sven; Shaikh, Soraya

2004-01-01

Introduction This open label, multicentre study was conducted to assess the times to offset of the pharmacodynamic effects and the safety of remifentanil in patients with varying degrees of renal impairment requiring intensive care. Methods A total of 40 patients, who were aged 18 years or older and had normal/mildly impaired renal function (estimated creatinine clearance ≥ 50 ml/min; n = 10) or moderate/severe renal impairment (estimated creatinine clearance <50 ml/min; n = 30), were entered into the study. Remifentanil was infused for up to 72 hours (initial rate 6–9 μg/kg per hour), with propofol administered if required, to achieve a target Sedation–Agitation Scale score of 2–4, with no or mild pain. Results There was no evidence of increased offset time with increased duration of exposure to remifentanil in either group. The time to offset of the effects of remifentanil (at 8, 24, 48 and 72 hours during scheduled down-titrations of the infusion) were more variable and were statistically significantly longer in the moderate/severe group than in the normal/mild group at 24 hours and 72 hours. These observed differences were not clinically significant (the difference in mean offset at 72 hours was only 16.5 min). Propofol consumption was lower with the remifentanil based technique than with hypnotic based sedative techniques. There were no statistically significant differences between the renal function groups in the incidence of adverse events, and no deaths were attributable to remifentanil use. Conclusion Remifentanil was well tolerated, and the offset of pharmacodynamic effects was not prolonged either as a result of renal dysfunction or prolonged infusion up to 72 hours. PMID:14975051

Sensitivity of the mouse to changes in azimuthal sound location: Angular separation, spectral composition, and sound level

PubMed Central

Allen, Paul D.; Ison, James R.

2010-01-01

Auditory spatial acuity was measured in mice using prepulse inhibition (PPI) of the acoustic startle reflex (ASR) as the indicator response for stimulus detection. The prepulse was a “speaker swap” (SSwap), shifting a noise between two speakers located along the azimuth. Their angular separation, and the spectral composition and sound level of the noise were varied, as was the interstimulus interval (ISI) between SSwap and ASR elicitation. In Experiment 1 a 180° SSwap of wide band noise (WBN) was compared with WBN Onset and Offset. SSwap and WBN Onset had near equal effects, but less than Offset. In Experiment 2 WBN SSwap was measured with speaker separations of 15°, 22.5°, 45°, and 90°. Asymptotic level and the growth rate of PPI increased with increased separation from 15° to 90°, but even the 15° SSwap provided significant PPI for the mean performance of the group. SSwap in Experiment 3 used octave band noise (2–4, 4–8, 8–16, or 16–32 kHz) and separations of 7.5° to 180°. SSwap was most effective for the highest frequencies, with no significant PPI for SSwap below 8–16 kHz, or for separations of 7.5°. In Experiment 4 SSwap had WBN sound levels from 40 to 78 dB SPL, and separations of 22.5°, 45°, 90° and 180°: PPI increased with level, this effect varying with ISI and angular separation. These experiments extend the prior findings on sound localization in mice, and the dependence of PPI on ISI adds a reaction-time-like dimension to this behavioral analysis. PMID:20364886

Performance of a Highly Sensitive, 19-element, Dual-polarization, Cryogenic L-band Phased-array Feed on the Green Bank Telescope

NASA Astrophysics Data System (ADS)

Roshi, D. Anish; Shillue, W.; Simon, B.; Warnick, K. F.; Jeffs, B.; Pisano, D. J.; Prestage, R.; White, S.; Fisher, J. R.; Morgan, M.; Black, R.; Burnett, M.; Diao, J.; Ruzindana, M.; van Tonder, V.; Hawkins, L.; Marganian, P.; Chamberlin, T.; Ray, J.; Pingel, N. M.; Rajwade, K.; Lorimer, D. R.; Rane, A.; Castro, J.; Groves, W.; Jensen, L.; Nelson, J. D.; Boyd, T.; Beasley, A. J.

2018-05-01

A new 1.4 GHz, 19-element, dual-polarization, cryogenic phased-array feed (PAF) radio astronomy receiver has been developed for the Robert C. Byrd Green Bank Telescope (GBT) as part of the Focal L-band Array for the GBT (FLAG) project. Commissioning observations of calibrator radio sources show that this receiver has the lowest reported beam-formed system temperature (T sys) normalized by aperture efficiency (η) of any phased-array receiver to date. The measured T sys/η is 25.4 ± 2.5 K near 1350 MHz for the boresight beam, which is comparable to the performance of the current 1.4 GHz cryogenic single-feed receiver on the GBT. The degradation in T sys/η at ∼4‧ (required for Nyquist sampling) and ∼8‧ offsets from the boresight is, respectively, ∼1% and ∼20% of the boresight value. The survey speed of the PAF with seven formed beams is larger by a factor between 2.1 and 7 compared to a single-beam system, depending on the observing application. The measured performance, both in frequency and offset from the boresight, qualitatively agrees with predictions from a rigorous electromagnetic model of the PAF. The astronomical utility of the receiver is demonstrated by observations of the pulsar B0329+54 and an extended H II region, the Rosette Nebula. The enhanced survey speed with the new PAF receiver will enable the GBT to carry out exciting new science, such as more efficient observations of diffuse, extended neutral hydrogen emission from galactic inflows and searches for fast radio bursts.

Establishing normal values for pediatric nighttime sleep measured by actigraphy: a systematic review and meta-analysis.

PubMed

Galland, Barbara C; Short, Michelle A; Terrill, Philip; Rigney, Gabrielle; Haszard, Jillian J; Coussens, Scott; Foster-Owens, Mistral; Biggs, Sarah N

2018-04-01

Despite the widespread use of actigraphy in pediatric sleep studies, there are currently no age-related normative data. To systematically review the literature, calculate pooled mean estimates of actigraphy-derived pediatric nighttime sleep variables and to examine the magnitude of change with age. A systematic search was performed across eight databases of studies that included at least one actigraphy sleep variable from healthy children aged 0-18 years. Data suitable for meta-analysis were confined to ages 3-18 years with seven actigraphy variables analyzed using random effects meta-analysis and meta-regression performed using age as a covariate. In total, 1334 articles did not meet inclusion criteria; 87 had data suitable for review and 79 were suitable for meta-analysis. Pooled mean estimates for overnight sleep duration declined from 9.68 hours (3-5 years age band) to 8.98, 8.85, 8.05, and 7.4 for age bands 6-8, 9-11, 12-14, and 15-18 years, respectively. For continuous data, the best-fit (R2 = 0.74) equation for hours over the 0-18 years age range was 9.02 - 1.04 × [(age/10)^2 - 0.83]. There was a significant curvilinear association between both sleep onset and offset with age (p < .001). Sleep latency was stable at 19.4 min per night. There were significant differences among the older age groups between weekday and weekend/nonschool days (18 studies). Total sleep time in 15-18 years old was 56 min longer, and sleep onset and offset almost 1 and 2 hours later, respectively, on weekend or nonschool days. These normative values have potential application to assist the interpretation of actigraphy measures from nighttime recordings across the pediatric age range, and aid future research.