Energy spectrum and electrical conductivity of graphene with a nitrogen impurity

NASA Astrophysics Data System (ADS)

Repetskii, S. P.; Vyshivanaya, I. G.; Skotnikov, V. A.; Yatsenyuk, A. A.

2015-04-01

The electronic structure of graphene with a nitrogen impurity has been studied based on the model of tight binding using exchange-correlation potentials in the density-functional theory. Wave functions of 2 s and 2 p states of neutral noninteracting carbon atoms have been chosen as the basis. When studying the matrix elements of the Hamiltonian, the first three coordination shells have been taken into account. It has been established that the hybridization of electron-energy bands leads to the splitting of the electron energy spectrum near the Fermi level. Due to the overlap of the energy bands, the arising gap behaves as a quasi-gap, in which the density of the electron levels is much lower than in the rest of the spectrum. It has been established that the conductivity of graphene decreases with increasing nitrogen concentration. Since the increase in the nitrogen concentration leads to an increase in the density of states at the Fermi level, the decrease in the conductivity is due to a sharper decrease in the time of relaxation of the electron sates.

Optical Diagnostics in the Gaseous Electronics Conference Reference Cell

PubMed Central

Hebner, G. A.; Greenberg, K. E.

1995-01-01

A number of laser-induced fluorescence and absorption spectroscopy studies have been conducted using Gaseous Electronics Conference Reference Cells. Laser-induced fluorescence has been used to measure hydrogen atom densities, to measure argon metastable spatial profiles, to determine the sheath electric field, and to infer the electron density and temperature. Absorption spectroscopy, using lamp sources and diode lasers, has been used to measure metastable atom densities in helium and argon discharges and fluorocarbon densities in silicon etching discharges. The experimental techniques and sample results of these investigations are reviewed. PMID:29151748

β-Cobalt sulfide nanoparticles decorated graphene composite electrodes for high capacity and power supercapacitors

NASA Astrophysics Data System (ADS)

Qu, Baihua; Chen, Yuejiao; Zhang, Ming; Hu, Lingling; Lei, Danni; Lu, Bingan; Li, Qiuhong; Wang, Yanguo; Chen, Libao; Wang, Taihong

2012-11-01

Electrochemical supercapacitors have drawn much attention because of their high power and reasonably high energy densities. However, their performances still do not reach the demand of energy storage. In this paper β-cobalt sulfide nanoparticles were homogeneously distributed on a highly conductive graphene (CS-G) nanocomposite, which was confirmed by transmission electron microscopy analysis, and exhibit excellent electrochemical performances including extremely high values of specific capacitance (~1535 F g-1) at a current density of 2 A g-1, high-power density (11.98 kW kg-1) at a discharge current density of 40 A g-1 and excellent cyclic stability. The excellent electrochemical performances could be attributed to the graphene nanosheets (GNSs) which could maintain the mechanical integrity. Also the CS-G nanocomposite electrodes have high electrical conductivity. These results indicate that high electronic conductivity of graphene nanocomposite materials is crucial to achieving high power and energy density for supercapacitors.

β-Cobalt sulfide nanoparticles decorated graphene composite electrodes for high capacity and power supercapacitors.

PubMed

Qu, Baihua; Chen, Yuejiao; Zhang, Ming; Hu, Lingling; Lei, Danni; Lu, Bingan; Li, Qiuhong; Wang, Yanguo; Chen, Libao; Wang, Taihong

2012-12-21

Electrochemical supercapacitors have drawn much attention because of their high power and reasonably high energy densities. However, their performances still do not reach the demand of energy storage. In this paper β-cobalt sulfide nanoparticles were homogeneously distributed on a highly conductive graphene (CS-G) nanocomposite, which was confirmed by transmission electron microscopy analysis, and exhibit excellent electrochemical performances including extremely high values of specific capacitance (~1535 F g(-1)) at a current density of 2 A g(-1), high-power density (11.98 kW kg(-1)) at a discharge current density of 40 A g(-1) and excellent cyclic stability. The excellent electrochemical performances could be attributed to the graphene nanosheets (GNSs) which could maintain the mechanical integrity. Also the CS-G nanocomposite electrodes have high electrical conductivity. These results indicate that high electronic conductivity of graphene nanocomposite materials is crucial to achieving high power and energy density for supercapacitors.

Electron density in surface barrier discharge emerging at argon/water interface: quantification for streamers and leaders

NASA Astrophysics Data System (ADS)

Cvetanović, Nikola; Galmiz, Oleksandr; Synek, Petr; Zemánek, Miroslav; Brablec, Antonín; Hoder, Tomáš

2018-02-01

Optical emission spectroscopy, fast intensified CCD imaging and electrical measurements were applied to investigate the basic plasma parameters of surface barrier discharge emerging from a conductive water electrode. The discharge was generated at the triple-line interface of atmospheric pressure argon gas and conductive water solution at the fused silica dielectrics using a sinusoidal high-voltage waveform. The spectroscopic methods of atomic line broadening and molecular spectroscopy were used to determine the electron densities and the gas temperature in the active plasma. These parameters were obtained for both applied voltage polarities and resolved spatially. Two different spectral signatures were identified in the spatially resolved spectra resulting in electron densities differing by two orders of magnitude. It is shown that two discharge mechanisms take a place: the streamer and the leader one, with electron densities of 1014 and 1016 cm-3, respectively. This spectroscopic evidence is supported by the combined diagnostics of electrical current measurements and phase-resolved intensified CCD camera imaging.

A multiple gap plasma cathode electron gun and its electron beam analysis in self and trigger breakdown modes.

PubMed

Kumar, Niraj; Pal, Dharmendra Kumar; Jadon, Arvind Singh; Pal, Udit Narayan; Rahaman, Hasibur; Prakash, Ram

2016-03-01

In the present paper, a pseudospark discharge based multiple gap plasma cathode electron gun is reported which has been operated separately in self and trigger breakdown modes using two different gases, namely, argon and hydrogen. The beam current and beam energy have been analyzed using a concentric ring diagnostic arrangement. Two distinct electron beams are clearly seen with hollow cathode and conductive phases. The hollow cathode phase has been observed for ∼50 ns where the obtained electron beam is having low beam current density and high energy. While in conductive phase it is high current density and low energy electron beam. It is inferred that in the hollow cathode phase the beam energy is more for the self breakdown case whereas the current density is more for the trigger breakdown case. The tailor made operation of the hollow cathode phase electron beam can play an important role in microwave generation. Up to 30% variation in the electron beam energy has been achieved keeping the same gas and by varying the breakdown mode operations. Also, up to 32% variation in the beam current density has been achieved for the trigger breakdown mode at optimized trigger position by varying the gas type.

Electron-hole collision limited transport in charge-neutral bilayer graphene

NASA Astrophysics Data System (ADS)

Nam, Youngwoo; Ki, Dong-Keun; Soler-Delgado, David; Morpurgo, Alberto F.

2017-12-01

Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities, transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron-hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas.

Investigation of thermoelectricity in KScSn half-Heusler compound

NASA Astrophysics Data System (ADS)

Shrivastava, Deepika; Acharya, Nikita; Sanyal, Sankar P.

2018-05-01

The electronic and transport properties of KScSn half-Heusler (HH) compound have been investigated using first-principles density functional theory and semi classical Boltzmann transport theory. The electronic band structure and density of states (total and partial) show semiconducting nature of KScSn with band gap 0.48 eV which agree well with previously reported results. The transport coefficient such as electrical conductivity, Seebeck coefficient, electronic thermal conductivity and power factor as a function of chemical potential are evaluated. KScSn has high power factor for p-type doping and is a potential candidate for thermoelectric applications.

Observations of the electron density perturbation in the cusp irregularities during the ICI-2 campaign

NASA Astrophysics Data System (ADS)

Abe, Takumi; Moen, J. I.

The ICI-2 (Investigation of Cusp Irregularities-2) sounding rocket campaign was conducted in Svalbard, Norway on December 2008. The scientific objective of ICI-2 is to investigate genera-tion mechanism(s) of coherent HF radar backscatter targets. Strong coherent HF backscatter echoes are well-known phenomena in the polar ionospheric cusp, and are thought to result from field-aligned plasma irregularities with decameter scale length. However, the generation mech-anism of backscatter targets has not yet been understood, and even the altitude profile of HF cusp backscatter is unknown. The ICI-2 rocket was launched at 10:35:10 UT at Ny-˚lesund, A and reached an apogee of 330 km at about 5 minutes after the launch. All onboard systems functioned flawlessly. A comprehensive measurement of the electron density, low energy elec-tron flux, medium energy particle flux, AC and DC electric fields was conducted to exploit the potential role of the gradient drift instability versus the other suggested mechanisms. We present a result obtained from a Fixed-Biased Probe (FBP) which was aimed at measuring fine-scale (< 1 m) electron density perturbation. Our analysis of the FBP data during the rocket's flight indicates that the rocket traversed HF backscatter regions where the electron density perturbation is relatively large. The power spectrum analysis of the electron density shows that the amplitude increases not only in the decameter wavelength but also in the broad range of frequency. Characteristic features of the electron density perturbation are summarized as follows: 1) A strong perturbation of the electron density was observed by the FBP when the ICI-2 rocket passed through a front side of the poleward moving 630 nm emission region which was identified by the all-sky imager. This means that the electron density perturbation and the 630 nm emission are observed to coexist in the same region. 2) The absolute value of the electron density becomes larger in the disturbed region than in the surrounding region. The electron density gradient in the boundary with the outer region is larger in the equatorward side than in the poleward side. 3) The amplitude of the electron density perturbation is remarkably large in the equatorward edge rather than the poleward boundaries. 4) The FBP identified the electron density perturbation at three different altitudes during the rocket flight. This indicates that the perturbation likely exists not only within the narrow limits but in a larger extent in the vertical direction.

Many-body Effects in a Laterally Inhomogeneous Semiconductor Quantum Well

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Li, Jian-Zhong; Biegel, Bryan A. (Technical Monitor)

2002-01-01

Many body effects on conduction and diffusion of electrons and holes in a semiconductor quantum well are studied using a microscopic theory. The roles played by the screened Hartree-Fock (SHE) terms and the scattering terms are examined. It is found that the electron and hole conductivities depend only on the scattering terms, while the two-component electron-hole diffusion coefficients depend on both the SHE part and the scattering part. We show that, in the limit of the ambipolax diffusion approximation, however, the diffusion coefficients for carrier density and temperature are independent of electron-hole scattering. In particular, we found that the SHE terms lead to a reduction of density-diffusion coefficients and an increase in temperature-diffusion coefficients. Such a reduction or increase is explained in terms of a density-and temperature dependent energy landscape created by the bandgap renormalization.

A multiple gap plasma cathode electron gun and its electron beam analysis in self and trigger breakdown modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Niraj; Pal, Udit Narayan; Prakash, Ram

In the present paper, a pseudospark discharge based multiple gap plasma cathode electron gun is reported which has been operated separately in self and trigger breakdown modes using two different gases, namely, argon and hydrogen. The beam current and beam energy have been analyzed using a concentric ring diagnostic arrangement. Two distinct electron beams are clearly seen with hollow cathode and conductive phases. The hollow cathode phase has been observed for ∼50 ns where the obtained electron beam is having low beam current density and high energy. While in conductive phase it is high current density and low energy electronmore » beam. It is inferred that in the hollow cathode phase the beam energy is more for the self breakdown case whereas the current density is more for the trigger breakdown case. The tailor made operation of the hollow cathode phase electron beam can play an important role in microwave generation. Up to 30% variation in the electron beam energy has been achieved keeping the same gas and by varying the breakdown mode operations. Also, up to 32% variation in the beam current density has been achieved for the trigger breakdown mode at optimized trigger position by varying the gas type.« less

Conductive mechanism in manganite materials

NASA Astrophysics Data System (ADS)

Liu, Xianming; Zhu, Hong; Zhang, Yuheng

2002-01-01

We describe a model in which f(T)=M(T)/Mmax represents both the fraction of the itinerant electron density in the double-exchange (DE) theory and the magnetization σ in the current carrier density collapse (CCDC) theory. With this model, we have checked the DE and CCDC theories with our experimental results of the transport behavior. The DE theory yields agreement with the experimental resistivity excellently, in which the conductivity is the sum of the polaronic and itinerant electronic conductivity for the insulator-metal transition regime. The fitting curves of the resistivity by the CCDC theory deviate from the experiment seriously. This might be caused by the improper assumption of the temperature-dependent carrier density and the temperature-independent carrier mobility. Therefore, it is concluded that the DE theory is more suitable to explain the conductive mechanism in perovskite manganites.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedrich, M.; Baker, K.D.; Brekke, A.

Electron density profiles from ground-based and rocket-borne measurements conducted at three sites in northern Scandinavia under various degrees of geophysical disturbances are presented. These data are checked against an instantaneous picture of the ionospheric absorption obtained via the dense riometer network. A map of the riometer absorption and measured electron densities over Scandinavia is given.

Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering.

PubMed

Jang, C; Adam, S; Chen, J-H; Williams, E D; Das Sarma, S; Fuhrer, M S

2008-10-03

We reduce the dimensionless interaction strength alpha in graphene by adding a water overlayer in ultrahigh vacuum, thereby increasing dielectric screening. The mobility limited by long-range impurity scattering is increased over 30%, due to the background dielectric constant enhancement leading to a reduced interaction of electrons with charged impurities. However, the carrier-density-independent conductivity due to short-range impurities is decreased by almost 40%, due to reduced screening of the impurity potential by conduction electrons. The minimum conductivity is nearly unchanged, due to canceling contributions from the electron-hole puddle density and long-range impurity mobility. Experimental data are compared with theoretical predictions with excellent agreement.

Negative differential resistance in electron tunneling in ultrathin films near the two-dimensional limit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batabyal, R.; Abdul Wasey, A. H. M.; Mahato, J. C.

We report on our observation of negative differential resistance (NDR) in electron tunneling conductance in atomic-scale ultrathin Ag films on Si(111) substrates. NDR was observed by scanning tunneling spectroscopy measurements. The tunneling conductance depends on the electronic local density of states (LDOS) of the sample. We show that the sample bias voltage, at which negative differential resistance and peak negative conductance occur, depends on the film thickness. This can be understood from the variation in the LDOS of the Ag films as a function of film thickness down to the two-dimensional limit of one atomic layer. First principles density functionalmore » theory calculations have been used to explain the results.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khomkin, A. L., E-mail: alhomkin@mail.ru; Shumikhin, A. S.

The conductivity of metal vapors at the critical point and near it has been considered. The liquid-metal conductivity originates in this region. The thermodynamic parameters of the critical point, the density of conduction electrons, and the conductivities of various metal vapors have been calculated within the unified approach. It has been proposed to consider the conductivity at the critical point—critical conductivity—as the fourth critical parameter in addition to the density, temperature, and pressure.

A theoretical study for electronic and transport properties of covalent functionalized MoS2 monolayer

NASA Astrophysics Data System (ADS)

Gao, Lijuan; Yang, Zhao-Di; Zhang, Guiling

2017-06-01

The geometries, electronic and electron transport properties of a series of functionalized MoS2 monolayers were investigated using density-functional theory (DFT) and the non-equilibrium Green's function (NEGF) methods. n-Propyl, n-trisilicyl, phenyl, p-nitrophenyl and p-methoxyphenyl are chosen as electron-donating groups. The results show covalent functionalization with electron-donating groups could make a transformation from typical semiconducting to metallic properties for appearance of midgap level across the Fermi level (Ef). The calculations of transport properties for two-probe devices indicate that conductivities of functionalized systems are obviously enhanced relative to pristine MoS2 monolayer. Grafted groups contribute to the major transport path and play an important role in enhancing conductivity. The NDR effect is found. The influence of grafted density is also studied. Larger grafted density leads to wider bandwidth of midgap level, larger current response of I-V curves and larger current difference between peak and valley.

The piezoelectric gating effect in a thin bent membrane with a two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Shevyrin, Andrey A.; Pogosov, Arthur G.

2018-05-01

Thin suspended nanostructures with a two-dimensional electron gas can be used as nanoelectromechanical systems in which electron transport is piezoelectrically coupled to mechanical motion and vibrations. Apart from practical applications, these systems are interesting for studying electron transport under unusual conditions, namely, in the presence of additional mechanical degrees of freedom. In the present paper, we analyze the influence of the bending on the density of a gated two-dimensional electron gas contained in a suspended membrane using the Thomas–Fermi approach and the model of pure electrostatic screening. We show that a small bending is analogous to a small change in gate voltages. Our calculations demonstrate that the density change is most prominent near the edges of the conductive channel created by negatively biased gates. When moving away from these edges, the bending-induced density change rapidly decays. We propose several methods to increase the magnitude of the effect, with the largest benefit obtained from coverage of the conductive channel with an additional grounded gate. It is shown that, for a conductive channel under a bare surface, the largest effect can be achieved if the two-dimensional electron gas is placed near the middle of the membrane thickness, despite the bending-induced strain is zero there.

An experimental investigation of mesospheric ionization

NASA Technical Reports Server (NTRS)

Mitchell, J. D.

1973-01-01

Mesospheric ionization and its variability are examined. Data were obtained primarily by the parachute-borne blunt probe technique conducted in coordinated rocket experiments at White Sands Missile Range, New Mexico and Wallops Island, Virginia. Electrical conductivity measurements and deduced charge density values from ten rocket launches are presented and discussed. Positive ion conductivity and electron density were found to be relatively invariant with height between 45 and 60 km. Variations in positive conductivity of a factor of two and enhancements in negative conductivity by as much as a factor of four were measured by the blunt probe. A simple lumped parameter ion chemistry model is shown to satisfactorily explain the charge density values for the undisturbed lower D-region. Implications of the data in terms of this model are considered. The principal loss mechanism for positive ions in the 45 to 60 km. region is concluded to be dissociative recombination. Electron densities deduced from the conductivity data are explained by detachment involving a minor neutral constituent which is mixed between 65 and 45 km. and then cuts off sharply below 45 km. A correlation study involving blunt probe measurements shows relatively good agreement between variations in positive conductivity and temperature.

Weavable, Conductive Yarn-Based NiCo//Zn Textile Battery with High Energy Density and Rate Capability.

PubMed

Huang, Yan; Ip, Wing Shan; Lau, Yuen Ying; Sun, Jinfeng; Zeng, Jie; Yeung, Nga Sze Sea; Ng, Wing Sum; Li, Hongfei; Pei, Zengxia; Xue, Qi; Wang, Yukun; Yu, Jie; Hu, Hong; Zhi, Chunyi

2017-09-26

With intrinsic safety and much higher energy densities than supercapacitors, rechargeable nickel/cobalt-zinc-based textile batteries are promising power sources for next generation personalized wearable electronics. However, high-performance wearable nickel/cobalt-zinc-based batteries are rarely reported because there is a lack of industrially weavable and knittable highly conductive yarns. Here, we use scalably produced highly conductive yarns uniformly covered with zinc (as anode) and nickel cobalt hydroxide nanosheets (as cathode) to fabricate rechargeable yarn batteries. They possess a battery level capacity and energy density, as well as a supercapacitor level power density. They deliver high specific capacity of 5 mAh cm -3 and energy densities of 0.12 mWh cm -2 and 8 mWh cm -3 (based on the whole solid battery). They exhibit ultrahigh rate capabilities of 232 C (liquid electrolyte) and 116 C (solid electrolyte), which endows the batteries excellent power densities of 32.8 mW cm -2 and 2.2 W cm -3 (based on the whole solid battery). These are among the highest values reported so far. A wrist band battery is further constructed by using a large conductive cloth woven from the conductive yarns by a commercial weaving machine. It powers various electronic devices successfully, enabling dual functions of wearability and energy storage.

Conditions for Aeronomic Applicability of the Classical Electron Heat Conduction Formula

NASA Technical Reports Server (NTRS)

Cole, K. D.; Hoegy, W. R.

1998-01-01

Conditions for the applicability of the classical formula for heat conduction in the electrons in ionized gas are investigated. In a fully ionised gas ( V(sub en) much greater than V(sub ei)), when the mean free path for electron-electron (or electron-ion) collisions is much larger than the characteristic thermal scale length of the observed system, the conditions for applicability break down. In the case of the Venus ionosphere this breakdown is indicated for a large fraction of the electron temperature data from altitudes greater than 180 km, for electron densities less than 10(exp 4)/cc cm. In a partially ionised gas such that V(sub en) much greater than V(sub ei) there is breakdown of the formula not only when the mean free path of electrons greatly exceeds the thermal scale length, but also when the gradient of neutral particle density exceeds the electron thermal gradient. It is shown that electron heat conduction may be neglected in estimating the temperature of joule heated electrons by observed strong 100 Hz electric fields when the conduction flux is limited by the saturation flux. The results of this paper support our earlier aeronomical arguments against the hypothesis of planetary scale whistlers for the 100 Hz electric field signal. In turn this means that data from the 100 Hz signal may not be used to support the case for lightning on Venus.

First-principle calculation of the electronic structure, DOS and effective mass TlInSe2

NASA Astrophysics Data System (ADS)

Ismayilova, N. A.; Orudzhev, G. S.; Jabarov, S. H.

2017-05-01

The electronic structure, density of states (DOS), effective mass are calculated for tetragonal TlInSe2 from first principle in the framework of density functional theory (DFT). The electronic structure of TlInSe2 has been investigated by Quantum Wise within GGA. The calculated band structure by Hartwigsen-Goedecker-Hutter (HGH) pseudopotentials (psp) shows both the valence band maximum and conduction band minimum located at the T point of the Brillouin zone. Valence band maximum at the T point and the surrounding parts originate mainly from 6s states of univalent Tl ions. Bottom of the conduction band is due to the contribution of 6p-states of Tl and 5s-states of In atoms. Calculated DOS effective mass for holes and electrons are mDOS h∗ = 0.830m e, mDOS h∗ = 0.492m e, respectively. Electron effective masses are fairly isotropic, while the hole effective masses show strong anisotropy. The calculated electronic structure, density of states and DOS effective masses of TlInSe2 are in good agreement with existing theoretical and experimental results.

A model study of tunneling conductance spectra of ferromagnetically ordered manganites

NASA Astrophysics Data System (ADS)

Panda, Saswati; Kar, J. K.; Rout, G. C.

2018-02-01

We report here the interplay of ferromagnetism (FM) and charge density wave (CDW) in manganese oxide systems through the study of tunneling conductance spectra. The model Hamiltonian consists of strong Heisenberg coupling in core t2g band electrons within mean-field approximation giving rise to ferromagnetism. Ferromagnetism is induced in the itinerant eg electrons due to Kubo-Ohata type double exchange (DE) interaction among the t2g and eg electrons. The charge ordering (CO) present in the eg band giving rise to CDW interaction is considered as the extra-mechanism to explain the colossal magnetoresistance (CMR) property of manganites. The magnetic and CDW order parameters are calculated using Zubarev's Green's function technique and solved self-consistently and numerically. The eg electron density of states (DOS) calculated from the imaginary part of the Green's function explains the experimentally observed tunneling conductance spectra. The DOS graph exhibits a parabolic gap near the Fermi energy as observed in tunneling conductance spectra experiments.

Density-functional calculations of transport properties in the nondegenerate limit and the role of electron-electron scattering

DOE PAGES

Desjarlais, Michael P.; Scullard, Christian R.; Benedict, Lorin X.; ...

2017-03-13

We compute electrical and thermal conductivities of hydrogen plasmas in the non-degenerate regime using Kohn-Sham Density Functional Theory (DFT) and an application of the Kubo- Greenwood response formula, and demonstrate that for thermal conductivity, the mean-field treatment of the electron-electron (e-e) interaction therein is insufficient to reproduce the weak-coupling limit obtained by plasma kinetic theories. An explicit e-e scattering correction to the DFT is posited by appealing to Matthiessen's Rule and the results of our computations of conductivities with the quantum Lenard-Balescu (QLB) equation. Further motivation of our correction is provided by an argument arising from the Zubarev quantum kineticmore » theory approach. Significant emphasis is placed on our efforts to produce properly converged results for plasma transport using Kohn-Sham DFT, so that an accurate assessment of the importance and efficacy of our e-e scattering corrections to the thermal conductivity can be made.« less

Hydrodynamic model for conductivity in graphene.

PubMed

Mendoza, M; Herrmann, H J; Succi, S

2013-01-01

Based on the recently developed picture of an electronic ideal relativistic fluid at the Dirac point, we present an analytical model for the conductivity in graphene that is able to describe the linear dependence on the carrier density and the existence of a minimum conductivity. The model treats impurities as submerged rigid obstacles, forming a disordered medium through which graphene electrons flow, in close analogy with classical fluid dynamics. To describe the minimum conductivity, we take into account the additional carrier density induced by the impurities in the sample. The model, which predicts the conductivity as a function of the impurity fraction of the sample, is supported by extensive simulations for different values of ε, the dimensionless strength of the electric field, and provides excellent agreement with experimental data.

UHF Radar observations at HAARP with HF pump frequencies near electron gyro-harmonics and associated ionospheric effects

NASA Astrophysics Data System (ADS)

Watkins, Brenton; Fallen, Christopher; Secan, James

Results for HF modification experiments at the HAARP facility in Alaska are presented for experiments with the HF pump frequency near third and fourth electron gyro-harmonics. A UHF diagnostic radar with range resolution of 600 m was used to determine time-dependent altitudes of scattering from plasma turbulence during heating experiments. Experiments were conducted with multiple HF frequencies stepped by 20 kHz above and below the gyro-harmonic values. During times of HF heating the HAARP facility has sufficient power to enhance large-scale ionospheric densities in the lower ionosphere (about 150-200 km altitude) and also in the topside ionosphere (above about 350 km). In the lower ionosphere, time-dependent decreases of the altitude of radar scatter result from electron density enhancements. The effects are substantially different even for relatively small frequency steps of 20 kHz. In all cases the time-varying altitude decrease of radar scatter stops about 5-10 km below the gyro-harmonic altitude that is frequency dependent; we infer that electron density enhancements stop at this altitude where the radar signals stop decreasing with altitude. Experiments with corresponding total electron content (TEC) data show that for HF interaction altitudes above about 170 km there is substantial topside electron density increases due to upward electron thermal conduction. For lower altitudes of HF interaction the majority of the thermal energy is transferred to the neutral gas and no significant topside density increases are observed. By selecting an appropriate HF frequency a little greater than the gyro-harmonic value we have demonstrated that the ionospheric response to HF heating is a self-oscillating mode where the HF interaction altitude moves up and down with a period of several minutes. If the interaction region is above about 170 km this also produces a continuously enhanced topside electron density and upward plasma flux. Experiments using an FM scan with the HF frequency increasing near the gyro-harmonic value were conducted. The FM scan rate was sufficiently slow that the electron density was approximately in an equilibrium state. For these experiments the altitude of the HF interaction follows a near straight line downward parallel to the altitude-dependent gyro-harmonic level.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoshimoto, Shinya, E-mail: yosshi@issp.u-tokyo.ac.jp; Shiozawa, Yuichiro; Koitaya, Takanori

Electronic states and electrical conductivity of the native oxide Si(111) surface adsorbed with an electron donor tetrakis(dimethylamino)ethylene (TDAE) were investigated using ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy (XPS), and independently driven four-probe conductivity measurements. The formation of positively charged TDAE species is confirmed by the downward shift of the vacuum level by 1.45 eV, the absence of HOMO level in the valence band, and observation of the positively charged state in the N 1s XPS spectra. Si 2p XPS spectra and four-probe conductivity measurements revealed that TDAE adsorption induces an increase in downward band bending and a reduction in electrical resistancemore » of the surface, respectively. The sheet conductivity and the electron density of the surface are 1.1 μS/◻ and 4.6 × 10{sup 9} cm{sup −2}, respectively, after TDAE adsorption, and they are as high as 350% of the original surface. These results demonstrate that the electron density of the semiconductor surface is successfully controlled by the electron donor molecule TDAE.« less

Kapton charging characteristics: Effects of material thickness and electron-energy distribution

NASA Technical Reports Server (NTRS)

Williamson, W. S.; Dulgeroff, C. R.; Hymann, J.; Viswanathan, R.

1985-01-01

Charging characteristics of polyimide (Kapton) of varying thicknesses under irradiation by a very-low-curent-density electron beam, with the back surface of the sample grounded are reported. These charging characteristics are in good agreement with a simple analytical model which predicts that in thin samples at low current density, sample surface potential is limited by conduction leakage through the bulk material. The charging of Kapton in a low-current-density electron beam in which the beam energy was modulated to simulate Maxwellian and biMaxwellian distribution functions is measured.

Conductance signatures of electron confinement induced by strained nanobubbles in graphene

NASA Astrophysics Data System (ADS)

Bahamon, Dario A.; Qi, Zenan; Park, Harold S.; Pereira, Vitor M.; Campbell, David K.

2015-09-01

We investigate the impact of strained nanobubbles on the conductance characteristics of graphene nanoribbons using a combined molecular dynamics - tight-binding simulation scheme. We describe in detail how the conductance, density of states, and current density of zigzag or armchair graphene nanoribbons are modified by the presence of a nanobubble. In particular, we establish that low-energy electrons can be confined in the vicinity of or within the nanobubbles by the delicate interplay among the pseudomagnetic field pattern created by the shape of the bubble, mode mixing, and substrate interaction. The coupling between confined evanescent states and propagating modes can be enhanced under different clamping conditions, which translates into Fano resonances in the conductance traces.

Implications of the formation of small polarons in Li2O2 for Li-air batteries

NASA Astrophysics Data System (ADS)

Kang, Joongoo; Jung, Yoon Seok; Wei, Su-Huai; Dillon, Anne C.

2012-01-01

Lithium-air batteries (LABs) are an intriguing next-generation technology due to their high theoretical energy density of ˜11 kWh/kg. However, LABs are hindered by both poor rate capability and significant polarization in cell voltage, primarily due to the formation of Li2O2 in the air cathode. Here, by employing hybrid density functional theory, we show that the formation of small polarons in Li2O2 limits electron transport. Consequently, the low electron mobility μ = 10-10-10-9 cm2/V s contributes to both the poor rate capability and the polarization that limit the LAB power and energy densities. The self-trapping of electrons in the small polarons arises from the molecular nature of the conduction band states of Li2O2 and the strong spin polarization of the O 2p state. Our understanding of the polaronic electron transport in Li2O2 suggests that designing alternative carrier conduction paths for the cathode reaction could significantly improve the performance of LABs at high current densities.

Electronic Transport and Possible Superconductivity at Van Hove Singularities in Carbon Nanotubes.

PubMed

Yang, Y; Fedorov, G; Shafranjuk, S E; Klapwijk, T M; Cooper, B K; Lewis, R M; Lobb, C J; Barbara, P

2015-12-09

Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.

Profiles of Ionospheric Storm-enhanced Density during the 17 March 2015 Great Storm

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, W.; Burns, A. G.; Yue, X.; Zhang, S.; Zhang, Y.

2015-12-01

Ionospheric F2 region peak densities (NmF2) are expected to show a positive phase correlation with total electron content (TEC), and electron density is expected to have an anti-correlation with electron temperature near the ionospheric F2 peak. However, we show that, during the 17 March 2015 great storm, TEC and F2 region electron density peak height (hmF2) over Millstone Hill increased, but the F2 region electron density peak (NmF2) decreased significantly during the storm-enhanced density (SED) phase of the storm compared with the quiet-time ionosphere. This SED occurred where there was a negative ionospheric storm near the F2 peak and below it. The weak ionosphere below the F2 peak resulted in much reduced downward heat conduction for the electrons, trapping the heat in the topside. This, in turn, increased the topside scale height, so that, even though electron densities at the F2 peak were depleted, TEC increased in the SED. The depletion in NmF2 was probably caused by an increase in the density of the molecular neutrals, resulting in enhanced recombination. In addition, the storm-time topside ionospheric electron density profile was much closer to diffusive equilibrium than non-storm time profile because of less daytime plasma flow from the ionosphere to the plasmasphere.

The Molecular Density of States in Bacterial Nanowires

PubMed Central

El-Naggar, Mohamed Y.; Gorby, Yuri A.; Xia, Wei; Nealson, Kenneth H.

2008-01-01

The recent discovery of electrically conductive bacterial appendages has significant physiological, ecological, and biotechnological implications, but the mechanism of electron transport in these nanostructures remains unclear. We here report quantitative measurements of transport across bacterial nanowires produced by the dissimilatory metal-reducing bacterium, Shewanella oneidensis MR-1, whose electron transport system is being investigated for renewable energy recovery in microbial fuel cells and bioremediation of heavy metals and radionuclides. The Shewanella nanowires display a surprising nonlinear electrical transport behavior, where the voltage dependence of the conductance reveals peaks indicating discrete energy levels with higher electronic density of states. Our results indicate that the molecular constituents along the Shewanella nanowires possess an intricate electronic structure that plays a role in mediating transport. PMID:18441026

Conductance based characterization of structure and hopping site density in 2D molecule-nanoparticle arrays

NASA Astrophysics Data System (ADS)

McCold, Cliff E.; Fu, Qiang; Howe, Jane Y.; Hihath, Joshua

2015-09-01

Composite molecule-nanoparticle hybrid systems have recently emerged as important materials for applications ranging from chemical sensing to nanoscale electronics. However, creating reproducible and repeatable composite materials with precise properties has remained one of the primary challenges to the implementation of these technologies. Understanding the sources of variation that dominate the assembly and transport behavior is essential for the advancement of nanoparticle-array based devices. In this work, we use a combination of charge-transport measurements, electron microscopy, and optical characterization techniques to determine the role of morphology and structure on the charge transport properties of 2-dimensional monolayer arrays of molecularly-interlinked Au nanoparticles. Using these techniques we are able to determine the role of both assembly-dependent and particle-dependent defects on the conductivities of the films. These results demonstrate that assembly processes dominate the dispersion of conductance values, while nanoparticle and ligand features dictate the mean value of the conductance. By performing a systematic study of the conductance of these arrays as a function of nanoparticle size we are able to extract the carrier mobility for specific molecular ligands. We show that nanoparticle polydispersity correlates with the void density in the array, and that because of this correlation it is possible to accurately determine the void density within the array directly from conductance measurements. These results demonstrate that conductance-based measurements can be used to accurately and non-destructively determine the morphological and structural properties of these hybrid arrays, and thus provide a characterization platform that helps move 2-dimensional nanoparticle arrays toward robust and reproducible electronic systems.Composite molecule-nanoparticle hybrid systems have recently emerged as important materials for applications ranging from chemical sensing to nanoscale electronics. However, creating reproducible and repeatable composite materials with precise properties has remained one of the primary challenges to the implementation of these technologies. Understanding the sources of variation that dominate the assembly and transport behavior is essential for the advancement of nanoparticle-array based devices. In this work, we use a combination of charge-transport measurements, electron microscopy, and optical characterization techniques to determine the role of morphology and structure on the charge transport properties of 2-dimensional monolayer arrays of molecularly-interlinked Au nanoparticles. Using these techniques we are able to determine the role of both assembly-dependent and particle-dependent defects on the conductivities of the films. These results demonstrate that assembly processes dominate the dispersion of conductance values, while nanoparticle and ligand features dictate the mean value of the conductance. By performing a systematic study of the conductance of these arrays as a function of nanoparticle size we are able to extract the carrier mobility for specific molecular ligands. We show that nanoparticle polydispersity correlates with the void density in the array, and that because of this correlation it is possible to accurately determine the void density within the array directly from conductance measurements. These results demonstrate that conductance-based measurements can be used to accurately and non-destructively determine the morphological and structural properties of these hybrid arrays, and thus provide a characterization platform that helps move 2-dimensional nanoparticle arrays toward robust and reproducible electronic systems. Electronic supplementary information (ESI) available: Temperature dependent measurements, activation energies, particle size distributions, void density-polydispersity relation, and DLS data. See DOI: 10.1039/c5nr04460j

Electronic structure of hydrogenated diamond: Microscopical insight into surface conductivity

NASA Astrophysics Data System (ADS)

Iacobucci, S.; Alippi, Paola; Calvani, P.; Girolami, M.; Offi, F.; Petaccia, L.; Trucchi, D. M.

2016-07-01

We have correlated the surface conductivity of hydrogen-terminated diamond to the electronic structure in the Fermi region. Significant density of electronic states (DOS) in proximity of the Fermi edge has been measured by photoelectron spectroscopy (PES) on surfaces exposed to air, corresponding to a p -type electric conductive regime, while upon annealing a depletion of the DOS has been achieved, resembling the diamond insulating state. The surface and subsurface electronic structure has been determined, exploiting the different probing depths of PES applied in a photon energy range between 7 and 31 eV. Ab initio density functional calculations including surface charge depletion and band-bending effects favorably compare with electronic states measured by angular-resolved photoelectron spectroscopy. Such states are organized in the energy-momentum space in a twofold structure: one, bulk-derived, band disperses in the Γ -X direction with an average hole effective mass of (0.43 ±0.02 ) m0 , where m0 is the bare electron mass; a second flatter band, with an effective mass of (2.2 ±0.9 ) m0 , proves that a hole gas confined in the topmost layers is responsible for the conductivity of the (2 ×1 ) hydrogen-terminated diamond (100 ) surface.

Spectral ellipsometry studying of iron's optical and electronic properties

NASA Astrophysics Data System (ADS)

Chernukha, Yevheniia; Stashchuk, Vasyl S.; Polianska, Olena; Oshtuk, Olexsandr

2014-05-01

Fe's optical and electronic properties were investigated at room temperature in different structural states. The sample's surface was explored in wide spectral range λ = 0,23-17,0 μm (E = 4,96 - 0,07 еV ) by the Beatty's spectral ellipsometry method. While an experiment was carried out ellipsometry parameters Δ and ψ were measure near the principal angle of incidence. The refraction index R , permittivity Ɛ and optical conductivity σ( hν ) , that is proportional to the interband density of electronic states, were calculated using these parameters. Fe's optical conductivities in liquid, amorphous and crystalline states were compared in this work. The optical conductivity was calculated using the published data of the iron's density of electronic states in crystalline, amorphous and liquid states for the comparison of the experimental and theoretical results. It is shown that, at structural transformations "amorphous, liquid state- crystalline state", the optical properties of metallic iron are determined, in the first turn, by the nearest neighborhood, and the electronic structure is not subjected to significant modifications.

Electron tunneling as a basis for semiconduction in proteins

NASA Technical Reports Server (NTRS)

Flax, L.; Flood, D.

1971-01-01

Electron tunneling is investigated as a possible mechanism for the conduction of electrical current in solids composed of protein molecules. An intermolecular potential barrier is assumed which takes into account the applied electric field and the possibility of image charge effects. The WKB approximation is used to calculate the net tunneling current density and resulting conductivity. The results suggest that electron tunneling per se is not a suitable mechanism for explaining the observed conductivities in such materials.

A first principles study of the electronic structure, elastic and thermal properties of UB2

NASA Astrophysics Data System (ADS)

Jossou, Ericmoore; Malakkal, Linu; Szpunar, Barbara; Oladimeji, Dotun; Szpunar, Jerzy A.

2017-07-01

Uranium diboride (UB2) has been widely deployed for refractory use and is a proposed material for Accident Tolerant Fuel (ATF) due to its high thermal conductivity. However, the applicability of UB2 towards high temperature usage in a nuclear reactor requires the need to investigate the thermomechanical properties, and recent studies have failed in highlighting applicable properties. In this work, we present an in-depth theoretical outlook of the structural and thermophysical properties of UB2, including but not limited to elastic, electronic and thermal transport properties. These calculations were performed within the framework of Density Functional Theory (DFT) + U approach, using Quantum ESPRESSO (QE) code considering the addition of Coulomb correlations on the uranium atom. The phonon spectra and elastic constant analysis show the dynamic and mechanical stability of UB2 structure respectively. The electronic structure of UB2 was investigated using full potential linear augmented plane waves plus local orbitals method (FP-LAPW+lo) as implemented in WIEN2k code. The absence of a band gap in the total and partial density of states confirms the metallic nature while the valence electron density plot reveals the presence of covalent bond between adjacent B-B atoms. We predicted the lattice thermal conductivity (kL) by solving Boltzmann Transport Equation (BTE) using ShengBTE. The second order harmonic and third-order anharmonic interatomic force constants required as input to ShengBTE was calculated using the Density-functional perturbation theory (DFPT). However, we predicted the electronic thermal conductivity (kel) using Wiedemann-Franz law as implemented in Boltztrap code. We also show that the sound velocity along 'a' and 'c' axes exhibit high anisotropy, which accounts for the anisotropic thermal conductivity of UB2.

Study of the transport parameters of cloud lightning plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Z. S.; Yuan, P.; Zhao, N.

2010-11-15

Three spectra of cloud lightning have been acquired in Tibet (China) using a slitless grating spectrograph. The electrical conductivity, the electron thermal conductivity, and the electron thermal diffusivity of the cloud lightning, for the first time, are calculated by applying the transport theory of air plasma. In addition, we investigate the change behaviors of parameters (the temperature, the electron density, the electrical conductivity, the electron thermal conductivity, and the electron thermal diffusivity) in one of the cloud lightning channels. The result shows that these parameters decrease slightly along developing direction of the cloud lightning channel. Moreover, they represent similar suddenmore » change behavior in tortuous positions and the branch of the cloud lightning channel.« less

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

NASA Astrophysics Data System (ADS)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Hydrodynamic Model for Conductivity in Graphene

PubMed Central

Mendoza, M.; Herrmann, H. J.; Succi, S.

2013-01-01

Based on the recently developed picture of an electronic ideal relativistic fluid at the Dirac point, we present an analytical model for the conductivity in graphene that is able to describe the linear dependence on the carrier density and the existence of a minimum conductivity. The model treats impurities as submerged rigid obstacles, forming a disordered medium through which graphene electrons flow, in close analogy with classical fluid dynamics. To describe the minimum conductivity, we take into account the additional carrier density induced by the impurities in the sample. The model, which predicts the conductivity as a function of the impurity fraction of the sample, is supported by extensive simulations for different values of ε, the dimensionless strength of the electric field, and provides excellent agreement with experimental data. PMID:23316277

Electron momentum density and Compton profile by a semi-empirical approach

NASA Astrophysics Data System (ADS)

Aguiar, Julio C.; Mitnik, Darío; Di Rocco, Héctor O.

2015-08-01

Here we propose a semi-empirical approach to describe with good accuracy the electron momentum densities and Compton profiles for a wide range of pure crystalline metals. In the present approach, we use an experimental Compton profile to fit an analytical expression for the momentum densities of the valence electrons. This expression is similar to a Fermi-Dirac distribution function with two parameters, one of which coincides with the ground state kinetic energy of the free-electron gas and the other resembles the electron-electron interaction energy. In the proposed scheme conduction electrons are neither completely free nor completely bound to the atomic nucleus. This procedure allows us to include correlation effects. We tested the approach for all metals with Z=3-50 and showed the results for three representative elements: Li, Be and Al from high-resolution experiments.

Conduction at domain walls in oxide multiferroics

NASA Astrophysics Data System (ADS)

Seidel, J.; Martin, L. W.; He, Q.; Zhan, Q.; Chu, Y.-H.; Rother, A.; Hawkridge, M. E.; Maksymovych, P.; Yu, P.; Gajek, M.; Balke, N.; Kalinin, S. V.; Gemming, S.; Wang, F.; Catalan, G.; Scott, J. F.; Spaldin, N. A.; Orenstein, J.; Ramesh, R.

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Conduction at domain walls in oxide multiferroics.

PubMed

Seidel, J; Martin, L W; He, Q; Zhan, Q; Chu, Y-H; Rother, A; Hawkridge, M E; Maksymovych, P; Yu, P; Gajek, M; Balke, N; Kalinin, S V; Gemming, S; Wang, F; Catalan, G; Scott, J F; Spaldin, N A; Orenstein, J; Ramesh, R

2009-03-01

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3). The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Electrical conduction at domain walls in multiferroic BiFeO3

NASA Astrophysics Data System (ADS)

Seidel, Jan; Martin, Lane; He, Qing; Zhan, Qian; Chu, Ying-Hao; Rother, Axel; Hawkridge, Michael; Maksymovych, Peter; Yu, Pu; Gajek, Martin; Balke, Nina; Kalinin, Sergei; Gemming, Sybille; Wang, Feng; Catalán, Gustau; Scott, James; Spaldin, Nicola; Orenstein, Joseph; Ramesh, Ramamoorthy

2009-03-01

We report the observation of room temperature electronic conductivity at ferroelectric domain walls in BiFeO3. The origin and nature of the observed conductivity is probed using a combination of conductive atomic force microscopy, high resolution transmission electron microscopy and first-principles density functional computations. We show that a structurally driven change in both the electrostatic potential and local electronic structure (i.e., a decrease in band gap) at the domain wall leads to the observed electrical conductivity. We estimate the conductivity in the wall to be several orders of magnitude higher than for the bulk material. Additionally we demonstrate the potential for device applications of such conducting nanoscale features.

Relationship between field-aligned currents and inverted-V parallel potential drops observed at midaltitudes

NASA Astrophysics Data System (ADS)

Sakanoi, T.; Fukunishi, H.; Mukai, T.

1995-10-01

The inverted-V field-aligned acceleration region existing in the altitude range of several thousand kilometers plays an essential role for the magnetosphere-ionosphere coupling system. The adiabatic plasma theory predicts a linear relationship between field-aligned current density (J∥) and parallel potential drop (Φ∥), that is, J∥=KΦ∥, where K is the field-aligned conductance. We examined this relationship using the charged particle and magnetic field data obtained from the Akebono (Exos D) satellite. The potential drop above the satellite was derived from the peak energy of downward electrons, while the potential drop below the satellite was derived from two different methods: the peak energy of upward ions and the energy-dependent widening of electron loss cone. On the other hand, field-aligned current densities in the inverted-V region were estimated from the Akebono magnetometer data. Using these potential drops and field-aligned current densities, we estimated the linear field-aligned conductance KJΦ. Further, we obtained the corrected field-aligned conductance KCJΦ by applying the full Knight's formula to the current-voltage relationship. We also independently estimated the field-aligned conductance KTN from the number density and the thermal temperature of magnetospheric source electrons which were obtained by fitting accelerated Maxwellian functions for precipitating electrons. The results are summarized as follows: (1) The latitudinal dependence of parallel potential drops is characterized by a narrow V-shaped structure with a width of 0.4°-1.0°. (2) Although the inverted-V potential region exactly corresponds to the upward field aligned current region, the latitudinal dependence of upward current intensity is an inverted-U shape rather than an inverted-V shape. Thus it is suggested that the field-aligned conductance KCJΦ changes with a V-shaped latitudinal dependence. In many cases, KCJΦ values at the edge of the inverted-V region are about 5-10 times larger than those at the center. (3) By comparing KCJΦ with KTN, KCJΦ is found to be about 2-20 times larger than KTN. These results suggest that low-energy electrons such as trapped electrons, secondary and back-scattered electrons, and ionospheric electrons significantly contribute to upward field-aligned currents in the inverted-V region. It is therefore inferred that non adiabatic pitch angle scattering processes play an important role in the inverted-V region. .

Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene

NASA Astrophysics Data System (ADS)

Hu, Bo

2015-08-01

Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron-hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron-hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.

OPTOELECTRONIC PROPERTIES AND THE GAP STATE DISTRIBUTION IN a-Si, Ge ALLOYS

NASA Astrophysics Data System (ADS)

Aljishi, S.; Smith, Z. E.; Wagner, S.

In this article we review optical and electronic transport data measured in amorphous silicon-germanium alloys with the goal of identifying the density of states as a function of alloy composition. The results show that while alloying a-Si:H with germanium has little effect on the valence band tail, the conduction band tail density of states is increased dramatically. Defect distributions both above and below midgap are detected and identified with the dangling bond D+/° and D°/- states. The density of deep defects below midgap increases exponentially with germanium content. Above midgap, a large concentration of defects lying between 0.3 and 0.5 eV below the conduction band edge has a strong effect on transient electron transport.

Composite electrode/electrolyte structure

DOEpatents

Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

2004-01-27

Provided is an electrode fabricated from highly electronically conductive materials such as metals, metal alloys, or electronically conductive ceramics. The electronic conductivity of the electrode substrate is maximized. Onto this electrode in the green state, a green ionic (e.g., electrolyte) film is deposited and the assembly is co-fired at a temperature suitable to fully densify the film while the substrate retains porosity. Subsequently, a catalytic material is added to the electrode structure by infiltration of a metal salt and subsequent low temperature firing. The invention allows for an electrode with high electronic conductivity and sufficient catalytic activity to achieve high power density in ionic (electrochemical) devices such as fuel cells and electrolytic gas separation systems.

Revisiting Wiedemann-Franz law through Boltzmann transport equations and ab-initio density functional theory

NASA Astrophysics Data System (ADS)

Nag, Abhinav; Kumari, Anuja; Kumar, Jagdish

2018-05-01

We have investigated structural, electronic and transport properties of the alkali metals using ab-initio density functional theory. The electron energy dispersions are found parabolic free electron like which is expected for alkali metals. The lattice constants for all the studied metals are also in good agreement within 98% with experiments. We have further computed their transport properties using semi-classical Boltzmann transport equations with special focus on electrical and thermal conductivity. Our objective was to obtain Wiedemann-Franz law and hence Lorenz number. The motivation to do these calculations is to see that how the incorporation of different interactions such as electron-lattice, electron-electron interaction affect the Wiedeman-Franz law. By solving Boltzmann transport equations, we have obtained electrical conductivity (σ/τ) and thermal conductivity (κ0 /τ) at different temperatures and then calculated Lorenz number using L = κ0 /(σT). The obtained value of Lorenz number has been found to match with value derived for free electron Fermi gas 2.44× 10-8 WΩK-2. Our results prove that the Wiedemann-Franz law as derived for free electron gas does not change much for alkali metals, even when one incorporates interaction of electrons with atomic nuclei and other electrons. However, at lower temperatures, the Lorenz number, was found to be deviating from its theoretical value.

First principles calculation of lattice thermal conductivity of metals considering phonon-phonon and phonon-electron scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yan; Lu, Zexi; Ruan, Xiulin, E-mail: ruan@purdue.edu

2016-06-14

The effect of phonon-electron (p-e) scattering on lattice thermal conductivity is investigated for Cu, Ag, Au, Al, Pt, and Ni. We evaluate both phonon-phonon (p-p) and p-e scattering rates from first principles and calculate the lattice thermal conductivity (κ{sub L}). It is found that p-e scattering plays an important role in determining the κ{sub L} of Pt and Ni at room temperature, while it has negligible effect on the κ{sub L} of Cu, Ag, Au, and Al. Specifically, the room temperature κ{sub L}s of Cu, Ag, Au, and Al predicted from density-functional theory calculations with the local density approximation aremore » 16.9, 5.2, 2.6, and 5.8 W/m K, respectively, when only p-p scattering is considered, while it is almost unchanged when p-e scattering is also taken into account. However, the κ{sub L} of Pt and Ni is reduced from 7.1 and 33.2 W/m K to 5.8 and 23.2 W/m K by p-e scattering. Even though Al has quite high electron-phonon coupling constant, a quantity that characterizes the rate of heat transfer from hot electrons to cold phonons in the two-temperature model, p-e scattering is not effective in reducing κ{sub L} owing to the relatively low p-e scattering rates in Al. The difference in the strength of p-e scattering in different metals can be qualitatively understood by checking the amount of electron density of states that is overlapped with the Fermi window. Moreover, κ{sub L} is found to be comparable to the electronic thermal conductivity in Ni.« less

Importance of conduction electron correlation in a Kondo lattice, Ce₂CoSi₃.

PubMed

Patil, Swapnil; Pandey, Sudhir K; Medicherla, V R R; Singh, R S; Bindu, R; Sampathkumaran, E V; Maiti, Kalobaran

2010-06-30

Kondo systems are usually described by the interaction of the correlation induced local moments with the highly itinerant conduction electrons. Here, we study the role of electron correlations among conduction electrons in the electronic structure of a Kondo lattice compound, Ce₂CoSi₃, using high resolution photoemission spectroscopy and ab initio band structure calculations, where Co 3d electrons contribute in the conduction band. High energy resolution employed in the measurements helped to reveal the signatures of Ce 4f states derived Kondo resonance features at the Fermi level and the dominance of Co 3d contributions at higher binding energies in the conduction band. The lineshape of the experimental Co 3d band is found to be significantly different from that obtained from the band structure calculations within the local density approximations, LDA. Consideration of electron-electron Coulomb repulsion, U, among Co 3d electrons within the LDA + U method leads to a better representation of experimental results. The signature of an electron correlation induced satellite feature is also observed in the Co 2p core level spectrum. These results clearly demonstrate the importance of the electron correlation among conduction electrons in deriving the microscopic description of such Kondo systems.

A study of density measurements in hypersonic helium tunnels using an electron beam fluorescence technique

NASA Technical Reports Server (NTRS)

Honaker, W. C.; Hunter, W. W., Jr.; Woods, W. C.

1979-01-01

A series of experiments have been conducted at Langley Research Center to determine the feasibility of using electron-beam fluorescence to measure the free-stream static density of gaseous helium flow over a wide range of conditions. These experiments were conducted in the Langley hypersonic helium tunnel facility and its 3-inch prototype. Measurements were made for a range of stagnation pressures and temperatures and produced free-stream number densities of 1.53 x 10 to the 23rd to 1.25 x 10 to the 24th molecules/cu m and static temperatures from 2 K to 80 K. The results showed the collision quenching cross section to be 4.4 x 10 to the -15th sq cm at 1 K and to have a weak temperature dependence of T to the 1/6. With knowledge of these two values, the free-stream number density can be measured quite accurately.

Development and application of a 2-electron reduced density matrix approach to electron transport via molecular junctions

NASA Astrophysics Data System (ADS)

Hoy, Erik P.; Mazziotti, David A.; Seideman, Tamar

2017-11-01

Can an electronic device be constructed using only a single molecule? Since this question was first asked by Aviram and Ratner in the 1970s [Chem. Phys. Lett. 29, 277 (1974)], the field of molecular electronics has exploded with significant experimental advancements in the understanding of the charge transport properties of single molecule devices. Efforts to explain the results of these experiments and identify promising new candidate molecules for molecular devices have led to the development of numerous new theoretical methods including the current standard theoretical approach for studying single molecule charge transport, i.e., the non-equilibrium Green's function formalism (NEGF). By pairing this formalism with density functional theory (DFT), a wide variety of transport problems in molecular junctions have been successfully treated. For some systems though, the conductance and current-voltage curves predicted by common DFT functionals can be several orders of magnitude above experimental results. In addition, since density functional theory relies on approximations to the exact exchange-correlation functional, the predicted transport properties can show significant variation depending on the functional chosen. As a first step to addressing this issue, the authors have replaced density functional theory in the NEGF formalism with a 2-electron reduced density matrix (2-RDM) method, creating a new approach known as the NEGF-RDM method. 2-RDM methods provide a more accurate description of electron correlation compared to density functional theory, and they have lower computational scaling compared to wavefunction based methods of similar accuracy. Additionally, 2-RDM methods are capable of capturing static electron correlation which is untreatable by existing NEGF-DFT methods. When studying dithiol alkane chains and dithiol benzene in model junctions, the authors found that the NEGF-RDM predicts conductances and currents that are 1-2 orders of magnitude below those of B3LYP and M06 DFT functionals. This suggests that the NEGF-RDM method could be a viable alternative to NEGF-DFT for molecular junction calculations.

Intense conductivity suppression by edge defects in zigzag MoS2 and WSe2 nanoribbons: a density functional based tight-binding study.

PubMed

Silva, F W N; Costa, A L M T; Liu, Lei; Barros, E B

2016-11-04

The effects of edge vacancies on the electron transport properties of zigzag MoS2/WSe2 nanoribbons are studied using a density functional theory (DFT)-based tight-binding model with a sp(3)d(5) basis set for the electronic structure calculation and applying the Landauer-Büttiker approach for the electronic transport. Our results show that the presence of a single edge vacancy, with a missing MoS2/WSe2 triplet, is enough to suppress the conductance of the system by almost one half for most energies around the Fermi level. Furthermore, the presence of other single defects along the same edge has little effect on the overall conductance, indicating that the conductance of that particular edge has been strongly suppressed by the first defect. The presence of another defect on the opposite edge further suppresses the quantum conductance, independently of the relative position between the two defects in opposite edges. The introduction of other defects cause the suppression to be energy dependent, leading to conductance peaks which depend on the geometry of the edges. The strong conductance dependence on the presence of edge defects is corroborated by DFT calculations using SIESTA, which show that the electronic bands near the Fermi energy are strongly localized at the edge.

A theoretical study of diurnal shift in reflection height of VLF waves using IRI electron density model

NASA Astrophysics Data System (ADS)

Madhavi Latha, T.; Peddi Naidu, P.; Madhusudhana Rao, D. N.; Indira Devi, M.

2012-11-01

Electron density profiles for the International Reference Ionosphere (IRI) 2001 and 2007 models have been utilized in evaluating the D-region conductivity parameter in earth ionosphere wave guide calculations. The day to night shift in reflection height of very low frequency (VLF) waves has been calculated using D-region conductivities derived from IRI models and the results are compared with those obtained from phase variation measurements of VLF transmissions from Rugby (England) made at Visakhapatnam (India). The values derived from the models are found to be much lower than those obtained from the experimental measurements. The values derived from the IRI models are in good agreement with those obtained from exponential conductivity model.

How the laser-induced ionization of transparent solids can be suppressed

NASA Astrophysics Data System (ADS)

Gruzdev, Vitaly

2013-12-01

A capability to suppress laser-induced ionization of dielectric crystals in controlled and predictable way can potentially result in substantial improvement of laser damage threshold of optical materials. The traditional models that employ the Keldysh formula do not predict any suppression of the ionization because of the oversimplified description of electronic energy bands underlying the Keldysh formula. To fix this gap, we performed numerical simulations of time evolution of conduction-band electron density for a realistic cosine model of electronic bands characteristic of wide-band-gap cubic crystals. The simulations include contributions from the photo-ionization (evaluated by the Keldysh formula and by the formula for the cosine band of volume-centered cubic crystals) and from the avalanche ionization (evaluated by the Drude model). Maximum conduction-band electron density is evaluated from a single rate equation as a function of peak intensity of femtosecond laser pulses for alkali halide crystals. Results obtained for high-intensity femtosecond laser pulses demonstrate that the ionization can be suppressed by proper choice of laser parameters. In case of the Keldysh formula, the peak electron density exhibits saturation followed by gradual increase. For the cosine band, the electron density increases with irradiance within the low-intensity multiphoton regime and switches to decrease with intensity approaching threshold of the strong singularity of the ionization rate characteristic of the cosine band. Those trends are explained with specific modifications of band structure by electric field of laser pulses.

Directly calculated electrical conductivity of hot dense hydrogen from molecular dynamics simulation beyond Kubo-Greenwood formula

NASA Astrophysics Data System (ADS)

Ma, Qian; Kang, Dongdong; Zhao, Zengxiu; Dai, Jiayu

2018-01-01

Electrical conductivity of hot dense hydrogen is directly calculated by molecular dynamics simulation with a reduced electron force field method, in which the electrons are represented as Gaussian wave packets with fixed sizes. Here, the temperature is higher than electron Fermi temperature ( T > 300 eV , ρ = 40 g / cc ). The present method can avoid the Coulomb catastrophe and give the limit of electrical conductivity based on the Coulomb interaction. We investigate the effect of ion-electron coupled movements, which is lost in the static method such as density functional theory based Kubo-Greenwood framework. It is found that the ionic dynamics, which contributes to the dynamical electrical microfield and electron-ion collisions, will reduce the conductivity significantly compared with the fixed ion configuration calculations.

A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

NASA Astrophysics Data System (ADS)

Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

2018-05-01

Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

A simulation study of interactions of space-shuttle generated electron beams with ambient plasma and neutral gas

NASA Technical Reports Server (NTRS)

Winglee, Robert M.

1991-01-01

The objective was to conduct large scale simulations of electron beams injected into space. The study of the active injection of electron beams from spacecraft is important, as it provides valuable insight into the plasma beam interactions and the development of current systems in the ionosphere. However, the beam injection itself is not simple, being constrained by the ability of the spacecraft to draw current from the ambient plasma. The generation of these return currents is dependent on several factors, including the density of the ambient plasma relative to the beam density, the presence of neutrals around the spacecraft, the configuration of the spacecraft, and the motion of the spacecraft through the plasma. Two dimensional (three velocity) particle simulations with collisional processes included are used to show how these different and often coupled processes can be used to enhance beam propagation from the spacecraft. To understand the radial expansion mechanism of an electron beam injected from a highly charged spacecraft, two dimensional particle-in-cell simulations were conducted for a high density electron beam injected parallel to magnetic fields from an isolated equipotential conductor into a cold background plasma. The simulations indicate that charge build-up at the beam stagnation point causes the beam to expand radially to the beam electron gyroradius.

A simulation study of interactions of Space-Shuttle generated electron beams with ambient plasma and neutral gas

NASA Technical Reports Server (NTRS)

1991-01-01

The object was to conduct large scale simulations of electron beams injected into space. The study of active injection of electron beams from spacecraft is important since it provides valuable insight into beam-plasma interactions and the development of current systems in the ionosphere. However, the beam injection itself is not simple, being constrained by the ability of the spacecraft to draw return current from the ambient plasma. The generation of these return currents is dependent on several factors, including the density of the ambient plasma relative to the beam density, the presence of neutrals around the spacecraft, the configuration of the spacecraft, and the motion of the spacecraft through the plasma. Two dimensional particle simulations with collisional processes included are used to show how these different and often coupled processes can be utilized to enhance beam propagation from the spacecraft. To understand the radical expansion of mechanism of an electron beam from a highly charged spacecraft, two dimensional particle in cell simulations were conducted for a high density electron beam injected parallel to magnetic fields from an isolated equipotential conductor into a cold background plasma. The simulations indicate that charge buildup at the beam stagnation point causes the beam to expand radially to the beam electron gyroradius.

Comparative study on extinction process of gas-blasted air and CO2 arc discharge using two-dimensional electron density imaging sensor

NASA Astrophysics Data System (ADS)

Inada, Yuki; Kumada, Akiko; Ikeda, Hisatoshi; Hidaka, Kunihiko; Nakano, Tomoyuki; Murai, Kosuke; Tanaka, Yasunori; Shinkai, Takeshi

2017-05-01

Shack-Hartmann type laser wavefront sensors were applied to gas-blasted arc discharges under current-zero phases, generated in a 50 mm-long interelectrode gap confined by a gas flow nozzle, in order to conduct a systematic comparison of electron density decaying processes for two kinds of arc-quenching gas media: air and \\text{C}{{\\text{O}}2} . The experimental results for the air and \\text{C}{{\\text{O}}2} arc plasmas showed that the electron densities and arc diameters became thinner toward the nozzle-throat inlet due to a stronger convection loss in the arc radial direction. In addition, \\text{C}{{\\text{O}}2} had a shorter electron density decaying time constant than air, which could be caused by convection loss and turbulent flow of \\text{C}{{\\text{O}}2} stronger than air.

Rational design of mixed ionic and electronic conducting perovskite oxides for solid oxide fuel cell anode materials: A case study for doped SrTiO3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suthirakun, Suwit; Xiao, Guoliang; Ammal, Salai Cheettu

2014-01-01

The effect of p- and n-type dopants on ionic and electronic conductivity of SrTiO3 based perovskites were investigated both computationally and experimentally. Specifically, we performed density functional theory (DFT) calculations of Na- and La-doped SrTiO3 and Na- and Nb-doped SrTiO3 systems. Constrained ab initio thermodynamic calculations were used to evaluate the phase stability and reducibility of doped SrTiO3 under both oxidizing and reducing synthesis conditions, as well as under anodic solid oxide fuel cell (SOFC) conditions. The density of states (DOS) of these materials was analyzed to study the effects of p- and n-doping on the electronic conductivity. Furthermore, Na-more » and La-doped SrTiO3 and Na- and Nb-doped SrTiO3 samples were experimentally prepared and the conductivity was measured to confirm our computational predictions. The experimental observations are in very good agreement with the theoretical predictions that doping n-doped SrTiO3 with small amounts of p-type dopants promotes both the ionic and electronic conductivity of the material. This doping strategy is valid independent of p- and n-doping site and permits the synthesis of perovskite based mixed ionic/electronic conductors.« less

Multicomponent Electron-Hole Superfluidity and the BCS-BEC Crossover in Double Bilayer Graphene

NASA Astrophysics Data System (ADS)

Conti, S.; Perali, A.; Peeters, F. M.; Neilson, D.

2017-12-01

Superfluidity in coupled electron-hole sheets of bilayer graphene is predicted here to be multicomponent because of the conduction and valence bands. We investigate the superfluid crossover properties as functions of the tunable carrier densities and the tunable energy band gap Eg. For small band gaps there is a significant boost in the two superfluid gaps, but the interaction-driven excitations from the valence to the conduction band can weaken the superfluidity, even blocking the system from entering the Bose-Einstein condensate (BEC) regime at low densities. At a given larger density, a band gap Eg˜80 - 120 meV can carry the system into the strong-pairing multiband BCS-BEC crossover regime, the optimal range for realization of high-Tc superfluidity.

Imaging electron wave functions inside open quantum rings.

PubMed

Martins, F; Hackens, B; Pala, M G; Ouisse, T; Sellier, H; Wallart, X; Bollaert, S; Cappy, A; Chevrier, J; Bayot, V; Huant, S

2007-09-28

Combining scanning gate microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of the electron probability density |Psi|(2)(x,y) in embedded mesoscopic quantum rings. The tip-induced conductance modulations share the same temperature dependence as the Aharonov-Bohm effect, indicating that they originate from electron wave function interferences. Simulations of both |Psi|(2)(x,y) and SGM conductance maps reproduce the main experimental observations and link fringes in SGM images to |Psi|(2)(x,y).

Resolving electrical conductivities from collisionally damped plasmons in isochorically heated warm dense aluminum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sperling, P.; Fletcher, L. B.; Chung, H. -K.

2016-03-29

We measure the highly-resolved inelastic x-ray scattering spectrum of isochorically ultrafast heated aluminum. In the x-ray forward scattering spectra the electron temperature could be measured from the down- and upshifted plasmon, where the electron density of ne = 1:8 1023 cm 3 is known a priori. We have studied the plasmon damping by applying electron-particle collision models beyond the Born approximation determining the electrical conductivity of warm dense aluminum.

Studies for determining thermal ion extraction potential for aluminium plasma generated by electron beam evaporator

NASA Astrophysics Data System (ADS)

Dileep Kumar, V.; Barnwal, Tripti A.; Mukherjee, Jaya; Gantayet, L. M.

2010-02-01

For effective evaporation of refractory metal, electron beam is found to be most suitable vapour generator source. Using electron beam, high throughput laser based purification processes are carried out. But due to highly concentrated electron beam, the vapour gets ionised and these ions lead to dilution of the pure product of laser based separation process. To estimate the concentration of these ions and extraction potential requirement to remove these ions from vapour stream, experiments have been conducted using aluminium as evaporant. The aluminium ingots were placed in water cooled copper crucible. Inserts were used to hold the evaporant, in order to attain higher number density in the vapour processing zone and also for confining the liquid metal. Parametric studies with beam power, number density and extraction potential were conducted. In this paper we discuss the trend of the generation of thermal ions and electrostatic field requirement for extraction.

Development program on a cold cathode electron gun

NASA Technical Reports Server (NTRS)

Spindt, C. A.; Holland, C. E.

1985-01-01

During this phase of the cathode development program, SRI improved the multiple electron beam exposure system used to print hole patterns for the cathode arrays, studied anisotropic etch processes, conducted cathode investigations using an emission microscope, reviewed possible alternate materials for cathode fabrication, studied cathode storage techniques, conducted high power operation experiments, and demonstrated high-current-density operation with small arrays of tips.

Nonequilibrium response of an electron-mediated charge density wave ordered material to a large dc electric field

NASA Astrophysics Data System (ADS)

Matveev, O. P.; Shvaika, A. M.; Devereaux, T. P.; Freericks, J. K.

2016-01-01

Using the Kadanoff-Baym-Keldysh formalism, we employ nonequilibrium dynamical mean-field theory to exactly solve for the nonlinear response of an electron-mediated charge-density-wave-ordered material. We examine both the dc current and the order parameter of the conduction electrons as the ordered system is driven by the electric field. Although the formalism we develop applies to all models, for concreteness, we examine the charge-density-wave phase of the Falicov-Kimball model, which displays a number of anomalous behaviors including the appearance of subgap density of states as the temperature increases. These subgap states should have a significant impact on transport properties, particularly the nonlinear response of the system to a large dc electric field.

Two-Dimensional Electron Density Measurement of Positive Streamer Discharge in Atmospheric-Pressure Air

NASA Astrophysics Data System (ADS)

Inada, Yuki; Ono, Ryo; Kumada, Akiko; Hidaka, Kunihiko; Maeyama, Mitsuaki

2016-09-01

The electron density of streamer discharges propagating in atmospheric-pressure air is crucially important for systematic understanding of the production mechanisms of reactive species utilized in wide ranging applications such as medical treatment, plasma-assisted ignition and combustion, ozone production and environmental pollutant processing. However, electron density measurement during the propagation of the atmospheric-pressure streamers is extremely difficult by using the conventional localized type measurement systems due to the streamer initiation jitters and the irreproducibility in the discharge paths. In order to overcome the difficulties, single-shot two-dimensional electron density measurement was conducted by using a Shack-Hartmann type laser wavefront sensor. The Shack-Hartmann sensor with a temporal resolution of 2 ns was applied to pulsed positive streamer discharges generated in an air gap between pin-to-plate electrodes. The electron density a few ns after the streamer initiation was 7*1021m-3 and uniformly distributed along the streamer channel. The electron density and its distribution profile were compared with a previous study simulating similar streamers, demonstrating good agreement. This work was supported in part by JKA and its promotion funds from KEIRIN RACE. The authors like to thank Mr. Kazuaki Ogura and Mr. Kaiho Aono of The University of Tokyo for their support during this work.

Ambipolar surface state thermoelectric power of topological insulator Bi2Se3.

PubMed

Kim, Dohun; Syers, Paul; Butch, Nicholas P; Paglione, Johnpierre; Fuhrer, Michael S

2014-01-01

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near the charge neutrality point and at low temperatures, the gate-dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states but is larger than expected at high electron doping, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ∼0.5 × 10(12) cm(-2) per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low-dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three-dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.

2016-06-14

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to mapmore » out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.« less

Spatial electron density and electric field strength measurements in microwave cavity experiments

NASA Technical Reports Server (NTRS)

Peters, M.; Rogers, J.; Whitehair, S.; Asmussen, J.; Kerber, R.

1984-01-01

Measurements of electron density and electric field strength have been made in an argon plasma contained in a resonant microwave cavity at 2.45 GHz. Spatial measurements of electron density, n sub e, are correlated with fluorescence observations of the discharge. Measurements of n sub e were made with Stark broadening and compared with n sub 3 calculated from measured plasma conductivity. Additional measurements of n sub 3 as a function of pressure and in mixtures of argon and oxygen are presented for pressures from 10 Torr to 1 atm. Measurements in flowing gases and in static systems are presented. In addition, limitations of these measurements are identified.

Properties of thermal air plasma with admixing of copper and carbon

NASA Astrophysics Data System (ADS)

Fesenko, S.; Veklich, A.; Boretskij, V.; Cressault, Y.; Gleizes, A.; Teulet, Ph

2014-11-01

This paper deals with investigations of air plasma with admixing of copper and carbon. Model plasma source unit with real breaking arc was used for the simulation of real discharges, which can be occurred during sliding of Cu-C composite electrodes on copper wire at electromotive vehicles. The complex technique of plasma property studies is developed. From one hand, the radial profiles of temperature and electron density in plasma of electric arc discharge in air between Cu-C composite and copper electrodes in air flow were measured by optical spectroscopy techniques. From another hand, the radial profiles of electric conductivity of plasma mixture were calculated by solution of energy balance equation. It was assumed that the thermal conductivity of air plasma is not depending on copper or carbon vapor admixtures. The electron density is obtained from electric conductivity profiles by calculation in assumption of local thermodynamic equilibrium in plasma. Computed in such way radial profiles of electron density in plasma of electric arc discharge in air between copper electrodes were compared with experimentally measured profiles. It is concluded that developed techniques of plasma diagnostics can be reasonably used in investigations of thermal plasma with copper and carbon vapors.

Modeling of laser-induced ionization of solid dielectrics for ablation simulations: role of effective mass

NASA Astrophysics Data System (ADS)

Gruzdev, Vitaly

2010-11-01

Modeling of laser-induced ionization and heating of conduction-band electrons by laser radiation frequently serves as a basis for simulations supporting experimental studies of laser-induced ablation and damage of solid dielectrics. Together with band gap and electron-particle collision rate, effective electron mass is one of material parameters employed for the ionization modeling. Exact value of the effective mass is not known for many materials frequently utilized in experiments, e.g., fused silica and glasses. Because of that reason, value of the effective mass is arbitrary varied around "reasonable values" for the ionization modeling. In fact, it is utilized as a fitting parameter to fit experimental data on dependence of ablation or damage threshold on laser parameters. In this connection, we study how strong is the influence of variations of the effective mass on the value of conduction-band electron density. We consider influence of the effective mass on the photo-ionization rate and rate of impact ionization. In particular, it is shown that the photo-ionization rate can vary by 2-4 orders of magnitude with variation of effective mass by 50%. Impact ionization shows a much weaker dependence on effective mass, but it significantly enhances the variations of seed-electron density produced by the photo-ionization. Utilizing those results, we demonstrate that variation of effective mass by 50% produces variations of conduction-band electron density by 6 orders of magnitude. In this connection, we discuss the general issues of the current models of laser-induced ionization.

Parametric dependence of ion temperature and electron density in the SUMMA hot-ion plasma using laser light scattering and emission spectroscopy

NASA Technical Reports Server (NTRS)

Snyder, A.; Patch, R. W.; Lauver, M. R.

1980-01-01

Hot-ion plasma experiments were conducted in the NASA Lewis SUMMA facility. A steady-state modified Penning discharge was formed by applying a radially inward dc electric field of several kilovolts near the magnetic mirror maxima. Results are reported for a hydrogen plasma covering a wide range in midplane magnetic flux densities from 0.5 to 3.37 T. Input power greater than 45 kW was obtained with water-cooled cathodes. Steady-state plasmas with ion kinetic temperatures from 18 to 830 eV were produced and measured spectroscopically. These ion temperatures were correlated with current, voltage, and magnetic flux density as the independent variables. Electron density measurements were made using an unusually sensitive Thomson scattering apparatus. The measured electron densities range from 2.1 x 10 to the 11th to 6.8 x 10 to the 12th per cu cm.

On the threshold conditions for electron beam damage of asbestos amosite fibers in the transmission electron microscope (TEM).

PubMed

Martin, Joannie; Beauparlant, Martin; Sauvé, Sébastien; L'Espérance, Gilles

2016-12-01

Asbestos amosite fibers were investigated to evaluate the damage caused by a transmission electron microscope (TEM) electron beam. Since elemental x-ray intensity ratios obtained by energy dispersive x-ray spectroscopy (EDS) are commonly used for asbestos identification, the impact of beam damage on these ratios was evaluated. It was determined that the magnesium/silicon ratio best represented the damage caused to the fiber. Various tests showed that most fibers have a current density threshold above which the chemical composition of the fiber is modified. The value of this threshold current density varied depending on the fiber, regardless of fiber diameter, and in some cases could not be determined. The existence of a threshold electron dose was also demonstrated. This value was dependent on the current density used and can be increased by providing a recovery period between exposures to the electron beam. This study also established that the electron beam current is directly related to the damage rate above a current density of 165 A/cm 2 . The large number of different results obtained suggest, that in order to ensure that the amosite fibers are not damaged, analysis should be conducted below a current density of 100 A/cm 2 .

Thermal conductivity switch: Optimal semiconductor/metal melting transition

NASA Astrophysics Data System (ADS)

Kim, Kwangnam; Kaviany, Massoud

2016-10-01

Scrutinizing distinct solid/liquid (s /l ) and solid/solid (s /s ) phase transitions (passive transitions) for large change in bulk (and homogenous) thermal conductivity, we find the s /l semiconductor/metal (S/M) transition produces the largest dimensionless thermal conductivity switch (TCS) figure of merit ZTCS (change in thermal conductivity divided by smaller conductivity). At melting temperature, the solid phonon and liquid molecular thermal conductivities are comparable and generally small, so the TCS requires localized electron solid and delocalized electron liquid states. For cyclic phase reversibility, the congruent phase transition (no change in composition) is as important as the thermal transport. We identify X Sb and X As (X =Al , Cd, Ga, In, Zn) and describe atomic-structural metrics for large ZTCS, then show the superiority of S/M phonon- to electron-dominated transport melting transition. We use existing experimental results and theoretical and ab initio calculations of the related properties for both phases (including the Kubo-Greenwood and Bridgman formulations of liquid conductivities). The 5 p orbital of Sb contributes to the semiconductor behavior in the solid-phase band gap and upon disorder and bond-length changes in the liquid phase this changes to metallic, creating the large contrast in thermal conductivity. The charge density distribution, electronic localization function, and electron density of states are used to mark this S/M transition. For optimal TCS, we examine the elemental selection from the transition, basic, and semimetals and semiconductor groups. For CdSb, addition of residual Ag suppresses the bipolar conductivity and its ZTCS is over 7, and for Zn3Sb2 it is expected to be over 14, based on the structure and transport properties of the better-known β -Zn4Sb3 . This is the highest ZTCS identified. In addition to the metallic melting, the high ZTCS is due to the electron-poor nature of II-V semiconductors, leading to the significantly low phonon conductivity.

Validation of ionospheric electron density profiles inferred from GPS occultation observations of the GPS/MET experiment

NASA Astrophysics Data System (ADS)

Kawakami, Todd Mori

In April of 1995, the launch of the GPS Meteorology Experiment (GPS/MET) onboard the Orbview-1 satellite, formerly known as Microlab-1, provided the first technology demonstration of active limb sounding of the Earth's atmosphere with a low Earth orbiting spacecraft utilizing the signals transmitted by the satellites of the Global Positioning System (GPS). Though the experiment's primary mission was to probe the troposphere and stratosphere, GPS/MET was also capable of making radio occultation observations of the ionosphere. The application of the GPS occultation technique to the upper atmosphere created a unique opportunity to conduct ionospheric research with an unprecedented global distribution of observations. For operational support requirements, the Abel transform could be employed to invert the horizontal TEC profiles computed from the L1 and L2 phase measurements observed by GPS/MET into electron density profiles versus altitude in near real time. The usefulness of the method depends on how effectively the TEC limb profiles can be transformed into vertical electron density profiles. An assessment of GPS/MET's ability to determine electron density profiles needs to be examined to validate the significance of the GPS occultation method as a new and complementary ionospheric research tool to enhance the observational databases and improve space weather modeling and forecasting. To that end, simulations of the occultation observations and their inversions have been conducted to test the Abel transform algorithm and to provide qualitative information about the type and range of errors that might be experienced during the processing of real data. Comparisons of the electron density profiles inferred from real GPS/MET observations are then compared with coincident in situ measurements from the satellites of Defense Meteorological Satellite Program (DMSP) and ground-based remote sensing from digisonde and incoherent scatter radar facilities. The principal focus of this study is the validation of the electron density profiles inferred from GPS occultation observations using the Abel transform.

Development of optimum process for electron beam cross-linking of high density polyethylene thermal energy storage pellets, process scale-up and production of application qualities of material

NASA Technical Reports Server (NTRS)

Salyer, I. O.

1980-01-01

The electron irradiation conditions required to prepare thermally from stable high density polyethylene (HDPE) were defined. The conditions were defined by evaluating the heat of fusion and the melting temperature of several HDPE specimens. The performance tests conducted on the specimens, including the thermal cycling tests in the thermal energy storage unit are described. The electron beam irradiation tests performed on the specimens, in which the total radiation dose received by the pellets, the electron beam current, the accelerating potential, and the atmospheres were varied, are discussed.

Localized conductive patterning via focused electron beam reduction of graphene oxide

NASA Astrophysics Data System (ADS)

Kim, Songkil; Kulkarni, Dhaval D.; Henry, Mathias; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V.; Fedorov, Andrei G.

2015-03-01

We report on a method for "direct-write" conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

Ab initio study on half-metallic, electronic and thermodynamic attributes of LaFeO3

NASA Astrophysics Data System (ADS)

Tariq, Saad; Saad, Saher; Jamil, M. Imran; Sohail Gilani, S. M.; Mahmood Ramay, Shahid; Mahmood, Asif

2018-03-01

By using the density functional theory (DFT) the systematic study of the structural, electronic and thermodynamic properties of lanthanum ferrite (LaFeO3) has been conducted. The elastic stability criterion and structural tolerance factor reveal that LaFeO3 exists in the cubic phase and is found to be stable under the ambient conditions. In electronic properties, the optical spectrum of the compound has been found to fall in the range of 488 to 688nm which has been calculated from the electronic band gap values by using the PBE-GGA and mBJ-GGA techniques. The light between 488 to 688nm would cause the valence electrons to jump in the conduction band showing the photoconductivity. The pronounced half-metallic character has been discussed by using the projected electronic density of states. The ferromagnetic response has been observed which may be attributed to the Fe-O bonding situation. The compound exhibits ductile, indirect band gap and half-metallic traits in the bulk phase. We expect the compound to be felicitous for the novel spintronic applications.

Electron temperatures and densities in the venus ionosphere: pioneer venus orbiter electron temperature probe results.

PubMed

Brace, L H; Theis, R F; Krehbiel, J P; Nagy, A F; Donahue, T M; McElroy, M B; Pedersen, A

1979-02-23

Altitude profiles of electron temperature and density in the ionosphere of Venus have been obtained by the Pioneer Venus orbiter electron temperatutre probe. Elevated temperatutres observed at times of low solar wind flux exhibit height profiles that are consistent with a model in which less than 5 percent of the solar wind energy is deposited at the ionopause and is conducted downward through an unmagnetized ionosphere to the region below 200 kilomneters where electron cooling to the neutral atmosphere proceeds rapidly. When solar wind fluxes are higher, the electron temperatures and densities are highly structured and the ionopause moves to lower altitudes. The ionopause height in the late afternoon sector observed thus far varies so widely from day to (day that any height variation with solar zenith angle is not apparent in the observations. In the neighborhood of the ionopause, measuremnents of plasma temperatures and densities and magnetic field strength indicate that an induced magnetic barrier plays an important role in the pressure transfer between the solar wind and the ionosphere. The bow, shock is marked by a distinct increase in electron current collected by the instrument, a featutre that provides a convenient identification of the bow shock location.

Implementation of microwave transmissions for rocket exhaust plume diagnostics

NASA Astrophysics Data System (ADS)

Coutu, Nicholas George

Rocket-launched vehicles produce a trail of exhaust that contains ions, free electrons, and soot. The exhaust plume increases the effective conductor length of the rocket. A conductor in the presence of an electric field (e.g. near the electric charge stored within a cloud) can channel an electric discharge. The electrical conductivity of the exhaust plume is related to its concentration of free electrons. The risk of a lightning strike in-flight is a function of both the conductivity of the body and its effective length. This paper presents an approach that relates the electron number density of the exhaust plume to its propagation constant. Estimated values of the collision frequency and electron number density generated from a numerical simulation of a rocket plume are used to guide the design of the experimental apparatus. Test par meters are identified for the apparatus designed to transmit a signal sweep form 4 GHz to 7 GHz through the exhaust plume of a J-class solid rocket motor. Measurements of the scattering parameters imply that the transmission does not penetrate the plume, but instead diffracts around it. The electron density 20 cm downstream from the nozzle exit is estimated to be between 2.7x1014 m--3 and 5.6x10 15 m--3.

Temperature-dependent band structure of SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Raslan, Amany; Lafleur, Patrick; Atkinson, W. A.

2017-02-01

We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO3 and a number of polar cap layers, including LaTiO3, LaAlO3, and GdTiO3. The model treats conduction electrons within a tight-binding approximation and the dielectric polarization via a Landau-Devonshire free energy that incorporates strontium titanate's strongly nonlinear, nonlocal, and temperature-dependent dielectric response. The self-consistent band structure comprises a mix of quantum 2D states that are tightly bound to the interface and quasi-three-dimensional (3D) states that extend hundreds of unit cells into the SrTiO3 substrate. We find that there is a substantial shift of electrons away from the interface into the 3D tails as temperature is lowered from 300 K to 10 K. This shift is least important at high electron densities (˜1014cm-2 ) but becomes substantial at low densities; for example, the total electron density within 4 nm of the interface changes by a factor of two for 2D electron densities ˜1013cm-2 . We speculate that the quasi-3D tails form the low-density high-mobility component of the interfacial electron gas that is widely inferred from magnetoresistance measurements.

A DSMC Study of Low Pressure Argon Discharge

NASA Astrophysics Data System (ADS)

Hash, David; Meyyappan, M.

1997-10-01

Work toward a self-consistent plasma simulation using the DSMC method for examination of the flowfields of low-pressure high density plasma reactors is presented. Presently, DSMC simulations for these applications involve either treating the electrons as a fluid or imposing experimentally determined values for the electron number density profile. In either approach, the electrons themselves are not physically simulated. Self-consistent plasma DSMC simulations have been conducted for aerospace applications but at a severe computational cost due in part to the scalar architectures on which the codes were employed. The present work attempts to conduct such simulations at a more reasonable cost using a plasma version of the object-oriented parallel Cornell DSMC code, MONACO, on an IBM SP-2. Due the availability of experimental data, the GEC reference cell is chosen to conduct preliminary investigations. An argon discharge is examined thus affording a simple chemistry set with eight gas-phase reactions and five species: Ar, Ar^+, Ar^*, Ar_2, and e where Ar^* is a metastable.

Transport in 2D Systems in the So-Called Metallic Phase

NASA Astrophysics Data System (ADS)

Das Sarma, Sankar

2001-03-01

I will discuss electronic transport in 2D semiconductor systems at low temperatures and densities. In particular, I will consider effects of screening,electron-impurity and electron-phonon interactions, and an external parallel magnetic field on the 2D temperature and density dependent conductivity. I will show that a theory [1] recently developed by Euyheon Hwang and myself may qualitatively account for much of the observed temperature, density, and field dependence of the 2D "metallic" conductivity for electrons in Si MOSFETs and n-GaAs heterostructures, and for holes in Si-Ge heterostructures and p-GaAs systems. I will provide a critique, based on the available experimental data and exact numerical simulations [2] of the Anderson-Hubbard-Mott model, of whether the 2D M-I-T phenomenon is likely to be the high temperature behavior of a T=0 quantum phase transition or the low temperature manifestation of a high-temperature semiclassical transition. Work supported by the US-ONR and the US-ARO. [1] S.Das Sarma and E.H.Hwang,PRL83,164(1999);84,5596(2000); Phys. Rev. B61, R7838(2000). [2] R. Kotlyar and S. Das Sarma, cond-mat/0002304.

Pressure-Dependent Electronic and Transport Properties of Bulk Platinum Oxide by Density Functional Theory

NASA Astrophysics Data System (ADS)

Kansara, Shivam; Gupta, Sanjeev K.; Sonvane, Yogesh; Nekrasov, Kirill A.; Kichigina, Natalia V.

2018-02-01

The structural, electronic, and vibrational properties of bulk platinum oxide (PtO) at compressive pressures in the interval from 0 GPa to 35 GPa are investigated using the density functional theory. The calculated electronic band structure of PtO shows poor metallicity at very low density of states on the Fermi level. However, the hybrid pseudopotential calculation yielded 0.78 eV and 1.30 eV direct band and indirect gap, respectively. Importantly, our results predict that PtO has a direct band gap within the framework of HSE06, and it prefers equally zero magnetic order at different pressures. In the Raman spectra, peaks are slightly shifted towards higher frequency with the decrease in pressure. We have also calculated the thermoelectric properties, namely the electronic thermal conductivity and electrical conductivity, with respect to temperature and thermodynamic properties such as entropy, specific heat at constant volume, enthalpy and Gibbs free energy with respect to pressure. The result shows that PtO is a promising candidate for use as a catalyst, in sensors, as a photo-cathode in water electrolysis, for thermal decomposition of inorganic salt and fuel cells.

3D Freeze-Casting of Cellular Graphene Films for Ultrahigh-Power-Density Supercapacitors.

PubMed

Shao, Yuanlong; El-Kady, Maher F; Lin, Cheng-Wei; Zhu, Guanzhou; Marsh, Kristofer L; Hwang, Jee Youn; Zhang, Qinghong; Li, Yaogang; Wang, Hongzhi; Kaner, Richard B

2016-08-01

3D cellular graphene films with open porosity, high electrical conductivity, and good tensile strength, can be synthesized by a method combining freeze-casting and filtration. The resulting supercapacitors based on 3D porous reduced graphene oxide (RGO) film exhibit extremely high specific power densities and high energy densities. The fabrication process provides an effective means for controlling the pore size, electronic conductivity, and loading mass of the electrode materials, toward devices with high energy-storage performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronic structure of Ag7GeS5I superionic compound

NASA Astrophysics Data System (ADS)

Bletskan, Dmytro; Studenyak, Ihor; Bletskan, Mykhailo; Vakulchak, Vasyl

2018-05-01

This paper presents the originally results of ab initio calculations of electronic structure, total and partial densities of electronic states as well as electronic charge density distribution of Ag7GeS5I crystal performed within the density functional theory (DFT) in the local density approximation (LDA) for exchange-correlation potential. According to performed calculations, Ag7GeS5I is the direct-gap semiconductor with the valence band top and the conductivity band bottom in the Γ point of Brillouin zone. The band gap width calculated in the LDA-approximation is Egd = 0.73 eV. The analysis of total and partial densities of electronic states allow us to identify the atomic orbital contributions into the crystal orbitals as well as the formation data of chemical bond in the studied crystal. In the top part of Ag7GeS5I valence band it was revealed the considerable mixing (hybridization) of the occupied d-states of Ag noble metal and the delocalized p-states of sulfur and iodine, which is undoubtedly associated with the covalent character of chemical bond between S, I atoms and noble metal atom.

Electron transport in doped fullerene molecular junctions

NASA Astrophysics Data System (ADS)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

Measurements of ion stopping around the Bragg peak in high-energy-density plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frenje, J. A.; Grabowski, P. E.; Li, C. K.

2015-11-09

For the first time, quantitative measurements of ion stopping at energies about the Bragg peak (or peak ion stopping, which occurs at an ion velocity comparable to the average thermal electron velocity), and its dependence on electron temperature (T e) and electron number density (n e) in the range of 0.5 – 4.0 keV and 3 × 10 22 – 3 × 10 23 cm -3 have been conducted, respectively. It is experimentally demonstrated that the position and amplitude of the Bragg peak varies strongly with T e with n e. As a result, the importance of including quantum diffractionmore » is also demonstrated in the stopping-power modeling of High-Energy-Density Plasmas.« less

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method

NASA Astrophysics Data System (ADS)

Chidambaram, Thenappan

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

Electronic properties of disordered Weyl semimetals at charge neutrality

NASA Astrophysics Data System (ADS)

Holder, Tobias; Huang, Chia-Wei; Ostrovsky, Pavel M.

2017-11-01

Weyl semimetals have been intensely studied as a three-dimensional realization of a Dirac-like excitation spectrum where the conduction bands and valence bands touch at isolated Weyl points in momentum space. Like in graphene, this property entails various peculiar electronic properties. However, recent theoretical studies have suggested that resonant scattering from rare regions can give rise to a nonzero density of states even at charge neutrality. Here, we give a detailed account of this effect and demonstrate how the semimetallic nature is suppressed at the lowest scales. To this end, we develop a self-consistent T -matrix approach to investigate the density of states beyond the limit of weak disorder. Our results show a nonvanishing density of states at the Weyl point, which exhibits a nonanalytic dependence on the impurity density. This unusually strong effect of rare regions leads to a revised estimate for the conductivity close to the Weyl point and emphasizes possible deviations from semimetallic behavior in dirty Weyl semimetals at charge neutrality even with very low impurity concentration.

Fundamental mechanisms of laser damage of dielectric crystals by ultrashort pulse: ionization dynamics for the Keldysh model

NASA Astrophysics Data System (ADS)

Gruzdev, Vitaly

2014-12-01

Laser-induced ionization is a major process that initiates and drives the initial stages of laser-induced damage (LID) of high-quality transparent solids. The ionization and its contribution to LID are characterized in terms of the time-dependent ionization rate and conduction-band electron density. Considering femtosecond pulses of various durations (from 35 to 706 fs) and variable peak irradiances (from 0.01 to 60 TW/cm2), we use a single-rate equation to simulate time variations of conduction-band electron density and rates of the photoionization and impact ionization. The photoionization rate is evaluated with the Keldysh equation. At low irradiance, the electron density and total ionization rate demonstrate power scaling characteristic of multiphoton ionization. With the increase of irradiance, there is observed a saturation of the photoionization rate due to photoionization suppression by the Keldysh-type singularity during the increase in the number of simultaneously absorbed photons by 1. A striking result is that the saturation is followed by a stepwise transition from the ionization regime which is completely dominated by the photoionization to a regime totally dominated by the impact ionization. The transition results in the increase of the electron density by a few orders of magnitude induced by a variation of peak laser irradiance by about 15% to 20%. The physical effects that are involved are discussed.

Theory of Tunneling Spectroscopy in a Mn12 Single-Electron Transistor by Density-Functional Theory Methods

NASA Astrophysics Data System (ADS)

Michalak, Ł.; Canali, C. M.; Pederson, M. R.; Paulsson, M.; Benza, V. G.

2010-01-01

We consider tunneling transport through a Mn12 molecular magnet using spin density functional theory. A tractable methodology for constructing many-body wave functions from Kohn-Sham orbitals allows for the determination of spin-dependent matrix elements for use in transport calculations. The tunneling conductance at finite bias is characterized by peaks representing transitions between spin multiplets, separated by an energy on the order of the magnetic anisotropy. The energy splitting of the spin multiplets and the spatial part of their many-body wave functions, describing the orbital degrees of freedom of the excess charge, strongly affect the electronic transport, and can lead to negative differential conductance.

Theory of tunneling spectroscopy in a Mn12 single-electron transistor by density-functional theory methods.

PubMed

Michalak, Ł; Canali, C M; Pederson, M R; Paulsson, M; Benza, V G

2010-01-08

We consider tunneling transport through a Mn12 molecular magnet using spin density functional theory. A tractable methodology for constructing many-body wave functions from Kohn-Sham orbitals allows for the determination of spin-dependent matrix elements for use in transport calculations. The tunneling conductance at finite bias is characterized by peaks representing transitions between spin multiplets, separated by an energy on the order of the magnetic anisotropy. The energy splitting of the spin multiplets and the spatial part of their many-body wave functions, describing the orbital degrees of freedom of the excess charge, strongly affect the electronic transport, and can lead to negative differential conductance.

The Electronic Thermal Conductivity of Graphene.

PubMed

Kim, Tae Yun; Park, Cheol-Hwan; Marzari, Nicola

2016-04-13

Graphene, as a semimetal with the largest known thermal conductivity, is an ideal system to study the interplay between electronic and lattice contributions to thermal transport. While the total electrical and thermal conductivity have been extensively investigated, a detailed first-principles study of its electronic thermal conductivity is still missing. Here, we first characterize the electron-phonon intrinsic contribution to the electronic thermal resistivity of graphene as a function of doping using electronic and phonon dispersions and electron-phonon couplings calculated from first-principles at the level of density-functional theory and many-body perturbation theory (GW). Then, we include extrinsic electron-impurity scattering using low-temperature experimental estimates. Under these conditions, we find that the in-plane electronic thermal conductivity κe of doped graphene is ∼300 W/mK at room temperature, independently of doping. This result is much larger than expected and comparable to the total thermal conductivity of typical metals, contributing ∼10% to the total thermal conductivity of bulk graphene. Notably, in samples whose physical or domain sizes are of the order of few micrometers or smaller, the relative contribution coming from the electronic thermal conductivity is more important than in the bulk limit, because lattice thermal conductivity is much more sensitive to sample or grain size at these scales. Last, when electron-impurity scattering effects are included we find that the electronic thermal conductivity is reduced by 30 to 70%. We also find that the Wiedemann-Franz law is broadly satisfied at low and high temperatures but with the largest deviations of 20-50% around room temperature.

Boltzmann transport properties of ultra thin-layer of h-CX monolayers

NASA Astrophysics Data System (ADS)

Kansara, Shivam; Gupta, Sanjeev K.; Sonvane, Yogesh

2018-04-01

Structural, electronic and thermoelectric properties of monolayer h-CX (X= Al, As, B, Bi, Ga, In, P, N, Sb and Tl) have been computed using density functional theory (DFT). The structural, electronic band structure, phonon dispersion curves and thermoelectric properties have been investigated. h-CGa and h-CTl show the periodically lattice vibrations and h-CB and h-CIn show small imaginary ZA frequencies. Thermoelectric properties are obtained using BoltzTrap code with the constant relaxation time (τ) approximation such as electronic, thermal and electrical conductivity calculated for various temperatures. The results indicate that h-CGa, h-CIn, h-CTl and h-CAl have direct band gaps with minimum electronic thermal and electrical conductivity while h-CB and h-CN show the high electronic thermal and electrical conductivity with highest cohesive energy.

Plasma devices to guide and collimate a high density of MeV electrons.

PubMed

Kodama, R; Sentoku, Y; Chen, Z L; Kumar, G R; Hatchett, S P; Toyama, Y; Cowan, T E; Freeman, R R; Fuchs, J; Izawa, Y; Key, M H; Kitagawa, Y; Kondo, K; Matsuoka, T; Nakamura, H; Nakatsutsumi, M; Norreys, P A; Norimatsu, T; Snavely, R A; Stephens, R B; Tampo, M; Tanaka, K A; Yabuuchi, T

2004-12-23

The development of ultra-intense lasers has facilitated new studies in laboratory astrophysics and high-density nuclear science, including laser fusion. Such research relies on the efficient generation of enormous numbers of high-energy charged particles. For example, laser-matter interactions at petawatt (10(15) W) power levels can create pulses of MeV electrons with current densities as large as 10(12) A cm(-2). However, the divergence of these particle beams usually reduces the current density to a few times 10(6) A cm(-2) at distances of the order of centimetres from the source. The invention of devices that can direct such intense, pulsed energetic beams will revolutionize their applications. Here we report high-conductivity devices consisting of transient plasmas that increase the energy density of MeV electrons generated in laser-matter interactions by more than one order of magnitude. A plasma fibre created on a hollow-cone target guides and collimates electrons in a manner akin to the control of light by an optical fibre and collimator. Such plasma devices hold promise for applications using high energy-density particles and should trigger growth in charged particle optics.

Electron Densities Near Io from Galileo Plasma Wave Observations

NASA Technical Reports Server (NTRS)

Gurnett, D. A.; Persoon, A. M.; Kurth, W. S.; Roux, A.; Bolton, S. J.

2001-01-01

This paper presents an overview of electron densities obtained near Io from the Galileo plasma wave instrument during the first four flybys of Io. These flybys were Io, which was a downstream wake pass that occurred on December 7, 1995; I24, which was an upstream pass that occurred on October 11, 1999; I25, which was a south polar pass that occurred on November 26, 1999; and I27, which was an upstream pass that occurred on February 22, 2000. Two methods were used to measure the electron density. The first was based on the frequency of upper hybrid resonance emissions, and the second was based on the low-frequency cutoff of electromagnetic radiation at the electron plasma frequency. For three of the flybys, Io, I25, and I27, large density enhancements were observed near the closest approach to Io. The peak electron densities ranged from 2.1 to 6.8 x 10(exp 4) per cubic centimeters. These densities are consistent with previous radio occultation measurements of Io's ionosphere. No density enhancement was observed during the I24 flyby, most likely because the spacecraft trajectory passed too far upstream to penetrate Io's ionosphere. During two of the flybys, I25 and I27, abrupt step-like changes were observed at the outer boundaries of the region of enhanced electron density. Comparisons with magnetic field models and energetic particle measurements show that the abrupt density steps occur as the spacecraft penetrated the boundary of the Io flux tube, with the region of high plasma density on the inside of the flux tube. Most likely the enhanced electron density within the Io flux tube is associated with magnetic field lines that are frozen to Io by the high conductivity of Io's atmosphere, thereby enhancing the escape of plasma along the magnetic field lines that pass through Io's ionosphere.

Effect of strain on the electronic structure and optical properties of germanium

NASA Astrophysics Data System (ADS)

Wen, Shumin; Zhao, Chunwang; Li, Jijun; Hou, Qingyu

2018-05-01

The effects of biaxial strain parallel to the (001) plane on the electronic structures and optical properties of Ge are calculated using the first-principles plane-wave pseudopotential method based on density functional theory. The screened-exchange local-density approximation function was used to obtain more reliable band structures, while strain was changed from ‑4% to +4%. The results show that the bandgap of Ge decreases with the increase of strain. Ge becomes a direct-bandgap semiconductor when the tensile strain reaches to 2%, which is in good agreement with the experimental results. The density of electron states of strained Ge becomes more localized. The tensile strain can increase the static dielectric constant distinctly, whereas the compressive strain can decrease the static dielectric constant slightly. The strain makes the absorption band edge move toward low energy. Both the tensile strain and compressive strain can significantly increase the reflectivity in the range from 7 eV to 14 eV. The tensile strain can decrease the optical conductivity, but the compressive strain can increase the optical conductivity significantly.

Theoretical Study of α-V2O5 -Based Double-Wall Nanotubes.

PubMed

Porsev, Vitaly V; Bandura, Andrei V; Evarestov, Robert A

2015-10-05

First-principles calculations of the atomic and electronic structure of double-wall nanotubes (DWNTs) of α-V2 O5 are performed. Relaxation of the DWNT structure leads to the formation of two types of local regions: 1) bulk-type regions and 2) puckering regions. Calculated total density of states (DOS) of DWNTs considerably differ from that of single-wall nanotubes and the single layer, as well as from the DOS of the bulk and double layer. Small shoulders that appear on edges of valence and conduction bands result in a considerable decrease in the band gaps of the DWNTs (up to 1 eV relative to the single-layer gaps). The main reason for this effect is the shift of the inner- and outer-wall DOS in opposite directions on the energetic scale. The electron density corresponding to shoulders at the conduction-band edges is localized on vanadium atoms of the bulk-type regions, whereas the electron density corresponding to shoulders at the valence-band edges belongs to oxygen atoms of both regions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analytical modeling of electron energy loss spectroscopy of graphene: Ab initio study versus extended hydrodynamic model.

PubMed

Djordjević, Tijana; Radović, Ivan; Despoja, Vito; Lyon, Keenan; Borka, Duško; Mišković, Zoran L

2018-01-01

We present an analytical modeling of the electron energy loss (EEL) spectroscopy data for free-standing graphene obtained by scanning transmission electron microscope. The probability density for energy loss of fast electrons traversing graphene under normal incidence is evaluated using an optical approximation based on the conductivity of graphene given in the local, i.e., frequency-dependent form derived by both a two-dimensional, two-fluid extended hydrodynamic (eHD) model and an ab initio method. We compare the results for the real and imaginary parts of the optical conductivity in graphene obtained by these two methods. The calculated probability density is directly compared with the EEL spectra from three independent experiments and we find very good agreement, especially in the case of the eHD model. Furthermore, we point out that the subtraction of the zero-loss peak from the experimental EEL spectra has a strong influence on the analytical model for the EEL spectroscopy data. Copyright © 2017 Elsevier B.V. All rights reserved.

Simulation study of the sub-terawatt laser wakefield acceleration operated in self-modulated regime

NASA Astrophysics Data System (ADS)

Hsieh, C.-Y.; Lin, M.-W.; Chen, S.-H.

2018-02-01

Laser wakefield acceleration (LWFA) can be accomplished by introducing a sub-terawatt (TW) laser pulse into a thin, high-density gas target. In this way, the self-focusing effect and the self-modulation that happened on the laser pulse produce a greatly enhanced laser peak intensity that can drive a nonlinear plasma wave to accelerate electrons. A particle-in-cell model is developed to study sub-TW LWFA when a 0.6-TW laser pulse interacts with a dense hydrogen plasma. Gas targets having a Gaussian density profile or a flat-top distribution are defined for investigating the properties of sub-TW LWFA when conducting with a gas jet or a gas cell. In addition to using 800-nm laser pulses, simulations are performed with 1030-nm laser pulses, as they represent a viable approach to realize the sub-TW LWFA driven by high-frequency, diode-pumped laser systems. The peak density which allows the laser peak power PL˜2 Pc r of self-focusing critical power is favourable for conducting sub-TW LWFA. Otherwise, an excessively high peak density can induce an undesired filament effect which rapidly disintegrates the laser field envelope and violates the process of plasma wave excitation. The plateau region of a flat-top density distribution allows the self-focusing and the self-modulation of the laser pulse to develop, from which well-established plasma bubbles can be produced to accelerate electrons. The process of electron injection is complicated in such high-density plasma conditions; however, increasing the length of the plateau region represents a straightforward method to realize the injection and acceleration of electrons within the first bubble, such that an improved LWFA performance can be accomplished.

Effects of Structural Deformation and Tube Chirality on Electronic Conductance of Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Maiti, Amitesh; Anantram, M. P.; Biegel, Bryan A. (Technical Monitor)

2002-01-01

A combination of large scale classical force-field (UFF), density functional theory (DFT), and tight-binding Green's function transport calculations is used to study the electronic properties of carbon nanotubes under the twist, bending, and atomic force microscope (AFM)-tip deformation. We found that in agreement with experiment a significant change in electronic conductance can be induced by AFM-tip deformation of metallic zigzag tubes and by twist deformation of armchair tubes. The effect is explained in terms of bandstructure change under deformation.

Soft- to network hard-material for constructing both ion- and electron-conductive hierarchical porous structure to significantly boost energy density of a supercapacitor.

PubMed

Yang, Pingping; Xie, Jiale; Guo, Chunxian; Li, Chang Ming

2017-01-01

Soft-material PEDOT is used to network hard Co 3 O 4 nanowires for constructing both ion- and electron-conductive hierarchical porous structure Co 3 O 4 /PEDOT to greatly boost the capacitor energy density than sum of that of plain Co 3 O 4 nanowires and PEDOT film. Specifically, the networked hierarchical porous structure of Co 3 O 4 /PEDOT is synthesized and tailored through hydrothermal method and post-electrochemical polymerization method for the PEDOT coating onto Co 3 O 4 nanowires. Typically, Co 3 O 4 /PEDOT supercapacitor gets a highest areal capacitance of 160mFcm -2 at a current density of 0.2mAcm -2 , which is about 2.2 times larger than the sum of that of plain Co 3 O 4 NWs (0.92mFcm -2 ) and PEDOT film (69.88mFcm -2 ). Besides, if only PEDOT as active mass is counted, Co 3 O 4 /PEDOT cell can achieve a highest capacitance of 567.21Fg -1 , this is the highest capacitance value obtained by PEDOT-based supercapacitors. Furthermore, this soft-hard network porous structure also achieves a high cycling stability of 93% capacitance retention after the 20,000th cycle. This work demonstrates a new approach to constructing both ion and electron conductive hierarchical porous structure to significantly boost energy density of a supercapacitor. Copyright © 2016 Elsevier Inc. All rights reserved.

First-principles calculations of structural, elastic, electronic, and optical properties of perovskite-type KMgH3 crystals: novel hydrogen storage material.

PubMed

Reshak, Ali H; Shalaginov, Mikhail Y; Saeed, Yasir; Kityk, I V; Auluck, S

2011-03-31

We report a first-principles study of structural and phase stability in three different structures of perovskite-types KMgH(3) according to H position. While electronic and optical properties were measured only for stable perovskite-type KMgH(3), our calculated structural parameters are found in good agreement with experiment and other theoretical results. We also study the electronic charge density space distribution contours in the (200), (101), and (100) crystallographic planes, which gives better insight picture of chemical bonding between K-H, K-Mg-H, and Mg-H. Moreover, we have calculated the electronic band structure dispersion, total, and partial density of electron states to study the band gap origin and the contribution of s-band of H, s and p-band of Mg in the valence band, and d-band of K in the conduction band. Furthermore, optical features such as dielectric functions, refractive indices, extinction coefficient, optical reflectivity, absorption coefficients, optical conductivities, and loss functions of stable KMgH(3) were calculated for photon energies up to 40 eV.

Spacecraft dielectric surface charging property determination

NASA Technical Reports Server (NTRS)

Williamson, W. S.

1987-01-01

The charging properties of 127 micron thick polyimide, (a commonly used spacecraft dielectric material) was measured under conditions of irradiation by a low-current-density electron beam with energy between 2 and 14 keV. The observed charging characteristics were consistent with predictions of the NASCAP computer model. The use of low electron current density results in a nonlinearity in the sample-potential versus beam-energy characteristic which is attributed to conduction leakage through the sample. Microdischarges were present at relatively low beam energies.

Synthesis, structural characterization and mobility measurement of electron accepting pyrazine derivatives

NASA Astrophysics Data System (ADS)

Lai, William W.

Several pyrazine based cyano aza derivatives have been synthesized and electronic devices made from them. Hole and electron mobilities were measured using a time of flight (TOF) method with silicon wafers as both the substrate and charge carrier generation layer. The high density of charge carriers generated from silicon allowed for film layers as thin as 100nm and up to 250nm. Two compounds, 2,3,6,7-tetracyano-1,4,5,8-tetraazanapthalene (TCNN) and 2,3,6,7-tetracyano-9,10-dioctyl-1,4,5,6,9,10-hexaazaanthracene (DOA) were shown to be good electron acceptors. The potentials at which TCNN and DOA are reduced was -0.03 and -1.5 volts respectively. Electron mobilities of both compounds were found to be 2x10-5 cm2V˙s . The previously unreported oxidation potential of 2,3,6,7-tetracyano-9,10-dioctyl 1,4,5,6,9,10-hexaazaanthracene was measured and the hole mobility was determined to be 2x10-5 cm2V˙s . In the case of DOA, the charge carrier density of the electron carriers was comparable to that of the charge carrier density of the hole carriers. In contrast, the electron TOF signal of TCNN, which does not exhibit an oxidation, is greater than the hole TOF signal by roughly 200 fold. The inability for TCNN to act as a hole carrier was remedied by combining it with tetrathiafulvalene (TTF) as an electron donor. Crystals of the 1:1 complex were grown and the solved structure revealed segregated stacking. Conductivity measurements, by both two and four point methods determined the range of conductivity ranging from 10-5 to 10-6 Scm . The electron and hole mobility of the material was determined to be 2x10-5 and 2x10-6 cm2V˙s respectively. With the complementary TTF:TCNN system, the electron V-s and hole TOF signals were comparable, indicating a material that can equally conduct electrons or holes.

Unconventional transport in ultraclean graphene constriction devices

NASA Astrophysics Data System (ADS)

Pita Vidal, Marta; Ma, Qiong; Watanabe, Kenji; Taniguchi, Takashi; Jarillo-Herrero, Pablo

Under mesoscopic conditions, strong electron-electron interactions and weak electron-phonon coupling in graphene lead to hydrodynamic behavior of electrons, resulting in unusual and unexpected transport phenomena. Specifically, this hydrodynamical collective cooperation of electrons is predicted to enhance the flow of electrical current, leading to a striking higher-than-ballistic conductance through a narrow geometrical constriction. To access the hydrodynamic regime, we fabricated high-quality, low-disorder graphene nano-constriction devices encapsulated by hexagonal boron nitride, where electron-electron scattering dominates impurity scattering. We will report on our systematic four-probe conductance measurements on devices with different constriction widths as a function of number density and temperature. The observation of quantum transport phenomena that are inconsistent with the non-interacting ballistic free-fermion model would suggest a macroscopic transport signature of electron viscosity.

A simulation study of radial expansion of an electron beam injected into an ionospheric plasma

NASA Technical Reports Server (NTRS)

Koga, J.; Lin, C. S.

1994-01-01

Injections of nonrelativistic electron beams from a finite equipotential conductor into an ionospheric plasma have been simulated using a two-dimensional electrostatic particle code. The purpose of the study is to survey the simulation parameters for understanding the dependence of beam radius on physical variables. The conductor is charged to a high potential when the background plasma density is less than the beam density. Beam electrons attracted by the charged conductor are decelerated to zero velocity near the stagnation point, which is at a few Debye lengths from the conductor. The simulations suggest that the beam electrons at the stagnation point receive a large transverse kick and the beam expands radially thereafter. The buildup of beam electrons at the stagnation point produces a large electrostatic force responsible for the transverse kick. However, for the weak charging cases where the background plasma density is larger than the beam density, the radial expansion mechanism is different; the beam plasma instability is found to be responsible for the radial expansion. The simulations show that the electron beam radius for high spacecraft charging cases is of the order of the beam gyroradius, defined as the beam velocity divided by the gyrofrequency. In the weak charging cases, the beam radius is only a fraction of the beam gyroradius. The parameter survey indicates that the beam radius increases with beam density and decreases with magnetic field and beam velocity. The beam radius normalized by the beam gyroradius is found to scale according to the ratio of the beam electron Debye length to the ambient electron Debye length. The parameter dependence deduced would be useful for interpreting the beam radius and beam density of electron beam injection experiments conducted from rockets and the space shuttle.

Influence of defects on the absorption edge of InN thin films: The band gap value

NASA Astrophysics Data System (ADS)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS 2

DOE PAGES

Durand, Corentin; Zhang, Xiaoguang; Fowlkes, Jason; ...

2015-01-16

We study the electrical transport properties of atomically thin individual crystalline grains of MoS 2 with four-probe scanning tunneling microscopy. The monolayer MoS 2 domains are synthesized by chemical vapor deposition on SiO 2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carriermore » density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS 2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam irradiation promotes the formation of defects and impact the electrical properties of MoS 2. Finally, our study reveals the important roles of defects and the electron beam irradiation effects in the electronic properties of atomic layers of MoS 2.« less

Electronic properties of graphene and effect of doping on the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nag, Abhinav, E-mail: abhinavn76@gmail.com; Kumar, Jagdish, E-mail: jagdishphysicist@gmail.com; Sastri, O. S. K. S., E-mail: sastri.osks@gmail.com

2015-05-15

The electronic structure of pure and doped two dimensional crystalline material graphene have been computed and analyzed. Density functional theory has been employed to perform calculations. The electronic exchange and correlations are considered using local density approximation (LDA). The doped material is studied within virtual crystal approximation (VCA) upto 0.15e excess as well as deficient charge per unit cell. Full Potential Linear Augmented Plane Wave basis as implemented in ELK code has been used to perform the calculations. To ensures the monolayer of graphene, distance after which energy is almost constant when interlayer seperation is varied, is taken as separatingmore » distance between the layers. The obtained density of states and band structure is analyzed. Results show that there is zero band gap in undoped graphene and conduction and valence band meets at fermi level at symmetry point K. PDOS graph shows that near the fermi level the main contribution is due to 2p{sub z} electrons. By using VCA, calculations for doped graphene are done and the results for doped graphene are compared with undoped graphene. We found that by electron or hole doping, the point where conduction and valence bands meet can shift below or above the fermi level. The shift in bands seems almost as per rigid band model upto doping concentration studied.« less

Temperature and density evolution during decay in a 2.45 GHz hydrogen electron cyclotron resonance plasma: off-resonant and resonant cases.

PubMed

Cortázar, O D; Megía-Macías, A; Vizcaíno-de-Julián, A

2013-09-01

Time resolved electron temperature and density measurements during the decay stage in a hydrogen electron cyclotron resonance (ECR) plasma are presented for a resonance and off-resonance magnetic field configurations. The measurements are conducted on a ECR plasma generator excited at 2.45 GHz denominated test-bench for ion-sources plasma studies at ESS Bilbao. The plasma parameters evolution is studied by Langmuir probe diagnostic with synchronized sample technique developed for repetitive pulsed plasmas with a temporal resolution of 200 ns in typical decay processes of about 40 μs. An afterglow transient is clearly observed in the reflected microwave power signal from the plasma. Simultaneously, the electron temperature evolution shows rebounding peaks that may be related to the interplay between density drop and microwave coupling with deep impact on the Electron Energy Distribution Function. The correlation of such structures with the plasma absorbed power and the coupling quality is also reported.

High-spatial-resolution electron density measurement by Langmuir probe for multi-point observations using tiny spacecraft

NASA Astrophysics Data System (ADS)

Hoang, H.; Røed, K.; Bekkeng, T. A.; Trondsen, E.; Clausen, L. B. N.; Miloch, W. J.; Moen, J. I.

2017-11-01

A method for evaluating electron density using a single fixed-bias Langmuir probe is presented. The technique allows for high-spatio-temporal resolution electron density measurements, which can be effectively carried out by tiny spacecraft for multi-point observations in the ionosphere. The results are compared with the multi-needle Langmuir probe system, which is a scientific instrument developed at the University of Oslo comprising four fixed-bias cylindrical probes that allow small-scale plasma density structures to be characterized in the ionosphere. The technique proposed in this paper can comply with the requirements of future small-sized spacecraft, where the cost-effectiveness, limited space available on the craft, low power consumption and capacity for data-links need to be addressed. The first experimental results in both the plasma laboratory and space confirm the efficiency of the new approach. Moreover, detailed analyses on two challenging issues when deploying the DC Langmuir probe on a tiny spacecraft, which are the limited conductive area of the spacecraft and probe surface contamination, are presented in the paper. It is demonstrated that the limited conductive area, depending on applications, can either be of no concern for the experiment or can be resolved by mitigation methods. Surface contamination has a small impact on the performance of the developed probe.

Drude weight and optical conductivity of a two-dimensional heavy-hole gas with k-cubic spin-orbit interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mawrie, Alestin; Ghosh, Tarun Kanti

We present a detailed theoretical study on zero-frequency Drude weight and optical conductivity of a two-dimensional heavy-hole gas (2DHG) with k-cubic Rashba and Dresselhaus spin-orbit interactions. The presence of k-cubic spin-orbit couplings strongly modifies the Drude weight in comparison to the electron gas with k-linear spin-orbit couplings. For large hole density and strong k-cubic spin-orbit couplings, the density dependence of Drude weight deviates from the linear behavior. We establish a relation between optical conductivity and the Berry connection. Unlike two-dimensional electron gas with k-linear spin-orbit couplings, we explicitly show that the optical conductivity does not vanish even for equal strengthmore » of the two spin-orbit couplings. We attribute this fact to the non-zero Berry phase for equal strength of k-cubic spin-orbit couplings. The least photon energy needed to set in the optical transition in hole gas is one order of magnitude smaller than that of electron gas. Types of two van Hove singularities appear in the optical spectrum are also discussed.« less

Theoretical study of the criteria and consequences of hydrodynamic electron flow in graphene.

NASA Astrophysics Data System (ADS)

Adam, Shaffique; Ho, Derek; Yudhistira, Indra; Chakraborty, Nilotpal

Experiments on graphene electrons have succeeded in entering the hydrodynamic regime, as demonstrated by successful observations of Wiedemann-Franz law violations, and evidence for electron vortices. The hydrodynamic regime is expected to occur when electron-electron interactions dominate over all other electron collision mechanisms. We calculate the electron-electron, electron-impurity and electron-phonon scattering rates as a function of temperature, charge doping and disorder (charge puddle) strength. We find that there exists a window in parameter space where electron-electron scattering dominates and hydrodynamic effects become observable. However, we also find that disorder induced carrier density inhomogeneity continues to play an important role in the vicinity of charge neutrality, even in the strongly interacting hydrodynamic regime. For example, although the ratio of thermal conductivity and electrical conductivity show a violation of the Wiedemann-Franz law in the aforementioned experiment, the electrical conductivity as a function of temperature still follows a disorder-driven universal scaling theory first predicted in This work was supported by the National Research Foundation of Singapore (NRF-NRFF2012-01).

Highly conductive electrospun carbon nanofiber/MnO2 coaxial nano-cables for high energy and power density supercapacitors

NASA Astrophysics Data System (ADS)

Zhi, Mingjia; Manivannan, Ayyakkannu; Meng, Fanke; Wu, Nianqiang

2012-06-01

This paper presents highly conductive carbon nanofiber/MnO2 coaxial cables in which individual electrospun carbon nanofibers are coated with an ultrathin hierarchical MnO2 layer. In the hierarchical MnO2 structure, an around 4 nm thick sheath surrounds the carbon nanofiber (CNF) in a diameter of 200 nm, and nano-whiskers grow radically outward from the sheath in view of the cross-section of the coaxial cables, giving a high specific surface area of MnO2. The CNFs are synthesized by electrospinning a precursor containing iron acetylacetonate (AAI). The addition of AAI not only enlarges the specific surface area of the CNF but also greatly enhances their electronic conductivity, which leads to a dramatic improvement in the specific capacitance and the rate capability of the CNF/MnO2 electrode. The AAI-CNF/MnO2 electrode shows a specific capacitance of 311 F g-1 for the whole electrode and 900 F g-1 for the MnO2 shell at a scan rate of 2 mV s-1. Good cycling stability, high energy density (80.2 Wh kg-1) and high power density (57.7 kW kg-1) are achieved. This work indicates that high electronic conductivity of the electrode material is crucial to achieving high power and energy density for pseudo-supercapacitors.

Electronic structure and optical properties of CsI, CsI(Ag), and CsI(Tl)

NASA Astrophysics Data System (ADS)

Zhang, Zheng; Zhao, Qiang; Li, Yang; Ouyang, Xiao-Ping

2016-05-01

The band structure, electronic density of states and optical properties of CsI and of CsI doped with silver or thallium are studied by using a first-principles calculation based on density functional theory (DFT). The exchange and the correlation potentials among the electrons are described by using the generalized gradient approximation (GGA). The results of our study show that the electronic structure changes somewhat when CsI is doped with silver or thallium. The band gaps of CsI(Ag) and CsI(Tl) are smaller than that of CsI, and the width of the conduction band of CsI is increased when CsI is doped with thallium or silver. Two peaks located in the conduction band of CsI(Ag) and CsI(Tl) are observed from their electronic densities of states. The absorption coefficients of CsI, CsI(Ag), and CsI(Tl) are zero when their photon energies are below 3.5 eV, 1.5 eV, and 3.1 eV, respectively. The results show that doping can improve the detection performance of CsI scintillators. Our study can explain why doping can improve the detection performance from a theoretical point of view. The results of our research provide both theoretical support for the luminescent mechanisms at play in scintillator materials when they are exposed to radiation and a reference for CsI doping from the point of view of the electronic structure.

Electronic properties and surface reactivity of SrO-terminated SrTiO3 and SrO-terminated iron-doped SrTiO3

PubMed Central

Staykov, Aleksandar; Tellez, Helena; Druce, John; Wu, Ji; Ishihara, Tatsumi; Kilner, John

2018-01-01

Abstract Surface reactivity and near-surface electronic properties of SrO-terminated SrTiO3 and iron doped SrTiO3 were studied with first principle methods. We have investigated the density of states (DOS) of bulk SrTiO3 and compared it to DOS of iron-doped SrTiO3 with different oxidation states of iron corresponding to varying oxygen vacancy content within the bulk material. The obtained bulk DOS was compared to near-surface DOS, i.e. surface states, for both SrO-terminated surface of SrTiO3 and iron-doped SrTiO3. Electron density plots and electron density distribution through the entire slab models were investigated in order to understand the origin of surface electrons that can participate in oxygen reduction reaction. Furthermore, we have compared oxygen reduction reactions at elevated temperatures for SrO surfaces with and without oxygen vacancies. Our calculations demonstrate that the conduction band, which is formed mainly by the d-states of Ti, and Fe-induced states within the band gap of SrTiO3, are accessible only on TiO2 terminated SrTiO3 surface while the SrO-terminated surface introduces a tunneling barrier for the electrons populating the conductance band. First principle molecular dynamics demonstrated that at elevated temperatures the surface oxygen vacancies are essential for the oxygen reduction reaction. PMID:29535797

Electronically conducting metal oxide nanoparticles and films for optical sensing applications

DOEpatents

Ohodnicki, Jr., Paul R.; Wang, Congjun; Andio, Mark A

2014-09-16

The disclosure relates to a method of detecting a change in a chemical composition by contacting a conducting oxide material with a monitored stream, illuminating the conducting oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The conducting metal oxide has a carrier concentration of at least 10.sup.17/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.-1 S/cm, where parameters are specified at the gas stream temperature. The optical response of the conducting oxide materials is proposed to result from the high carrier concentration and electronic conductivity of the conducting metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration and electronic conductivity. These changes in effective carrier densities and electronic conductivity of conducting metal oxide films and nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary conducting metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors.

PubMed

Morkötter, S; Jeon, N; Rudolph, D; Loitsch, B; Spirkoska, D; Hoffmann, E; Döblinger, M; Matich, S; Finley, J J; Lauhon, L J; Abstreiter, G; Koblmüller, G

2015-05-13

Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 10(3) cm(2) V(-1) s(-1). The spatial separation between the high-mobility free electron gas at the NW core-shell interface and the Si dopants in the shell is directly verified by atom probe tomographic (APT) analysis, band-profile calculations, and transport characterization in advanced field-effect transistor (FET) geometries, demonstrating powerful control over the free electron gas density and conductivity. Multigated NW-FETs allow us to spatially resolve channel width- and crystal phase-dependent variations in electron gas density and mobility along single NW-FETs. Notably, dc output and transfer characteristics of these n-type depletion mode NW-FETs reveal excellent drain current saturation and record low subthreshold slopes of 70 mV/dec at on/off ratios >10(4)-10(5) at room temperature.

Analysis of plasma characteristics and conductive mechanism of laser assisted pulsed arc welding

NASA Astrophysics Data System (ADS)

Liu, Shuangyu; Chen, Shixian; Wang, Qinghua; Li, Yanqing; Zhang, Hong; Ding, Hongtao

2017-05-01

This study aims to investigate the arc plasma shape and the spectral characteristics during the laser assisted pulsed arc welding process. The arc plasma shape was synchronously observed using a high speed camera, and the emission spectrum of plasma was obtained by spectrometer. The well-known Boltzmann plot method and Stark broadening were used to calculate the electron temperature and density respectively. The conductive mechanism of arc ignition in laser assisted arc hybrid welding was investigated, and it was found that the plasma current moved to the arc anode under the action of electric field. Thus, a significant parabolic channel was formed between the keyhole and the wire tip. This channel became the main method of energy transformation between the arc and the molten pool. The calculation results of plasma resistivity show that the laser plasma has low resistivity as the starting point of conductive channel formation. When the laser pulse duration increases, the intensity of the plasma radiation spectrum and the plasma electron density will increase, and the electron temperature will decrease.

Analysis of microscopic parameters of surface charging in polymer caused by defocused electron beam irradiation.

PubMed

Liu, Jing; Zhang, Hai-Bo

2014-12-01

The relationship between microscopic parameters and polymer charging caused by defocused electron beam irradiation is investigated using a dynamic scattering-transport model. The dynamic charging process of an irradiated polymer using a defocused 30 keV electron beam is conducted. In this study, the space charge distribution with a 30 keV non-penetrating e-beam is negative and supported by some existing experimental data. The internal potential is negative, but relatively high near the surface, and it decreases to a maximum negative value at z=6 μm and finally tend to 0 at the bottom of film. The leakage current and the surface potential behave similarly, and the secondary electron and leakage currents follow the charging equilibrium condition. The surface potential decreases with increasing beam current density, trap concentration, capture cross section, film thickness and electron-hole recombination rate, but with decreasing electron mobility and electron energy. The total charge density increases with increasing beam current density, trap concentration, capture cross section, film thickness and electron-hole recombination rate, but with decreasing electron mobility and electron energy. This study shows a comprehensive analysis of microscopic factors of surface charging characteristics in an electron-based surface microscopy and analysis. Copyright © 2014 Elsevier Ltd. All rights reserved.

High energy density redox flow device

DOEpatents

Chiang, Yet-Ming; Carter, W. Craig; Ho, Bryan Y; Duduta, Mihai; Limthongkul, Pimpa

2014-05-13

Redox flow devices are described in which at least one of the positive electrode or negative electrode-active materials is a semi-solid or is a condensed ion-storing electroactive material, and in which at least one of the electrode-active materials is transported to and from an assembly at which the electrochemical reaction occurs, producing electrical energy. The electronic conductivity of the semi-solid is increased by the addition of conductive particles to suspensions and/or via the surface modification of the solid in semi-solids (e.g., by coating the solid with a more electron conductive coating material to increase the power of the device). High energy density and high power redox flow devices are disclosed. The redox flow devices described herein can also include one or more inventive design features. In addition, inventive chemistries for use in redox flow devices are also described.

Electronic structure and optical properties of GdNi2Mnx compounds

NASA Astrophysics Data System (ADS)

Knyazev, Yu. V.; Lukoyanov, A. V.; Kuz'min, Yu. I.; Gaviko, V. S.

2018-02-01

The electronic structure and optical properties of GdNi2Mnx compounds (x = 0, 0.4, 0.6) were investigated. Spin-polarized electronic structure calculations were performed in the approximation of local electron spin density corrected for strong electron correlations using the LSDA+U method. The changes in the magnetic moments and exchange interactions in GdNi2Mnx (x = 0, 0.4, 0.6) governing the increase in the Curie temperature with manganese concentration were determined. The optical constants of the compounds were measured by the ellipsometric method in the wide spectral range of 0.22-15 μm. The peculiarities of the evolution of the frequency dependences of optical conductivity with a change in the manganese content were revealed. Based on the calculated densities of electron states, the behavior of these dispersion curves in the region of interband absorption of light was discussed. The concentration dependences of several electronic characteristics were determined.

Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

NASA Astrophysics Data System (ADS)

Hammond, Joseph Wilson

2000-10-01

Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from 500°C to 800°C. The sensors displayed slight drift in long term baseline stability and good long term sensitivity stability (14 days). Long term operation (30 days) at elevated temperatures had no noticeable effect on the thin film structure.

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

PubMed Central

Brady, Gerald J.; Way, Austin J.; Safron, Nathaniel S.; Evensen, Harold T.; Gopalan, Padma; Arnold, Michael S.

2016-01-01

Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G0 = 4e2/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm−1, fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm−1, which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm−1 and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies. PMID:27617293

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs.

PubMed

Brady, Gerald J; Way, Austin J; Safron, Nathaniel S; Evensen, Harold T; Gopalan, Padma; Arnold, Michael S

2016-09-01

Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G 0 = 4e (2)/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G 0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm(-1), fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G 0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm(-1), which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm(-1) and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies.

Carrier generation and electronic properties of a single-component pure organic metal

NASA Astrophysics Data System (ADS)

Kobayashi, Yuka; Terauchi, Takeshi; Sumi, Satoshi; Matsushita, Yoshitaka

2017-01-01

Metallic conduction generally requires high carrier concentration and wide bandwidth derived from strong orbital interaction between atoms or molecules. These requisites are especially important in organic compounds because a molecule is fundamentally an insulator; only multi-component salts with strong intermolecular interaction--namely, only charge transfer complexes and conducting polymers--have demonstrated intrinsic metallic behaviour. Herein we report a single-component electroactive molecule, zwitterionic tetrathiafulvalene(TTF)-extended dicarboxylate radical (TED), exhibiting metallic conduction even at low temperatures. TED exhibits d.c. conductivities of 530 S cm-1 at 300 K and 1,000 S cm-1 at 50 K with copper-like electronic properties. Spectroscopic and theoretical investigations of the carrier-generation mechanism and the electronic states of this single molecular species reveal a unique electronic structure with a spin-density gradient in the extended TTF moieties that becomes, in itself, a metallic state.

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shotaro; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

2016-01-01

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control. PMID:26973092

Thermospheric Response to Solar Wind Electric Field Fluctuations

NASA Astrophysics Data System (ADS)

Perlongo, N. J.; Ridley, A. J.

2013-12-01

The electron density of the thermosphere is of paramount importance for radio communications and drag on low altitude satellites, particularly during geomagnetic storms. Transient enhancements of ion velocities and subsequent density and temperature increases frequently occur as a result of storm-driven solar wind electric field fluctuations. Since the Earth's dipole magnetic field is tilted and offset from the center of the planet, significant asymmetries arise that alter the thermospheric response to energy input based upon the time of day of the disturbance. This study utilizes the Global Ionosphere-Thermosphere Model (GITM) to investigate this phenomenon by enhancing the convective electric field for one hour of the day in 22 different simulations. An additional baseline run was conducted with no IMF perturbation. Furthermore, four configurations of Earth's magnetic field were considered, Internal Geomagnetic Reference Field (IGRF), a perfect dipole, a dipole tilted by 10 degrees, and a tilted and offset dipole. These runs were conducted at equinox when the amount of sunlight falling on the different hemispheres is the same. Two additional runs were conducted at the solstices for comparison. It was found that the most geo-effective times are when the poles are pointed towards the sun. The electron density, neutral density and temperature as well as the winds are explored.

Density of states and extent of wave function: two crucial factors for small polaron hopping conductivity in 1D

NASA Astrophysics Data System (ADS)

Dimakogianni, M.; Simserides, C.; Triberis, G. P.

2013-07-01

We introduce a theoretical model to scrutinize the conductivity of small polarons in 1D disordered systems, focusing on two crucial - as will be demonstrated - factors: the density of states and the spatial extent of the electronic wave function. The investigation is performed for any temperature up to 300 K and under electric field of arbitrary strength up to the polaron dissociation limit. To accomplish this task, we combine analytical work with numerical calculations.

Insulator edge voltage gradient effects in spacecraft charging phenomena

NASA Technical Reports Server (NTRS)

Stevens, N. J.; Purvis, C. K.; Staskus, J. V.

1978-01-01

Insulating surfaces on geosynchronous satellites were charged by geomagnetic substorms to a point where discharges occur. The electromagnetic pulses from these discharges couple into satellite electronic systems disrupting operations are examined. Laboratory tests conducted on insulator charging have indicated that discharges appear to be initiated at insulator edges where voltage gradients can exist. An experimental investigation was conducted to measure edge voltage gradients on silvered Teflon samples as they are charged by monoenergetic electron beams. It was found that the surface voltage at insulator edges can be approximated by an exponential expression based on an electron current density balance.

Electronic structures of graphane with vacancies and graphene adsorbed with fluorine atoms

NASA Astrophysics Data System (ADS)

Wu, Bi-Ru; Yang, Chih-Kai

2012-03-01

We investigate the electronic structure of graphane with hydrogen vacancies, which are supposed to occur in the process of hydrogenation of graphene. A variety of configurations is considered and defect states are derived by density functional calculation. We find that a continuous chain-like distribution of hydrogen vacancies will result in conduction of linear dispersion, much like the transport on a superhighway cutting through the jungle of hydrogen. The same conduction also occurs for chain-like vacancies in an otherwise fully fluorine-adsorbed graphene. These results should be very useful in the design of graphene-based electronic circuits.

Density of Electronic States in the Conduction Band of Ultrathin Films of Naphthalenedicarboxylic Anhydride and Naphthalenetetracarboxylic Dianhydride on the Surface of Oxidized Silicon

NASA Astrophysics Data System (ADS)

Komolov, A. S.; Lazneva, E. F.; Gerasimova, N. B.; Panina, Yu. A.; Baramygin, A. V.; Zashikhin, G. D.; Pshenichnyuk, S. A.

2018-04-01

The results of examination of the electronic structure of the conduction band of naphthalenedicarboxylic anhydride (NDCA) films in the process of their deposition on the surface of oxidized silicon are presented. These results were obtained using total current spectroscopy (TCS) in the energy range from 5 to 20 eV above the Fermi level. The energy position of the primary maxima of the density of unoccupied states (DOUS) of an NDCA film was determined based on the experimental TCS data and calculated data and compared with the position of the DOUS maxima of a naphthalenetetracarboxylic dianhydride (NTCDA) film. The theoretical analysis involved calculating the energies and the spatial distribution of orbitals of the molecules under study at the B3LYP/6-31G(d) DFT (density functional theory) level and correcting the obtained energies in accordance with the procedure that was proven effective in earlier studies of the conduction band of films of small conjugated organic molecules. It was found that the DOUS maxima of the NTCDA film in the studied energy interval from 5 to 20 eV above the Fermi level are shifted toward lower electron energies by 1-2 eV relative to the corresponding DOUS maxima of the NDCA film Subdivision of the Ufa Federal Research Centre of the.

Influence of Electrical and Ionic Conductivities of Organic Electronic Ion Pump on Acetylcholine Exchange Performance

PubMed Central

Abdullayeva, Nazrin; Sankir, Mehmet

2017-01-01

By using an easy and effective method of depositing conjugated polymers (PEDOT:PSS) on flexible substrates, a new design for organic bioelectronic devices has been developed. The purpose was to build up a system that mimics the motion of neurotransmitters in the synaptic cleft by obtaining an electrical to chemical signal transport. Fourier transform infrared (FTIR) spectroscopy and Raman measurements have demonstrated that electrochemical overoxidation region which separates the pristine PEDOT:PSS electrodes and allows ionic conduction has been achieved successfully. The influence of both electrical and ionic conductivities on organic electronic ion pump (OEIP) performances has been studied. The ultimate goal was to achieve the highest equilibrium current density at the lowest applied voltage via enhancing the electrical conductivity of PEDOT:PSS and ionic conductivity of electrochemically overoxidized region. The highest equilibrium current density, which corresponds to 4.81 × 1017 number of ions of acetylcholine was about 41 μA cm−2 observed for the OEIP with the electrical conductivities of 54 S cm−1. This was a threshold electrical conductivity beyond which the OEIP performances were not changed much. Once Nafion™ has been applied for enhancing the ionic conductivity, the equilibrium current density increased about ten times and reached up to 408 μA cm−2. Therefore, it has been demonstrated that the OEIP performance mainly scales with the ionic conductivity. A straightforward method of producing organic bioelectronics is proposed here may provide a clue for their effortless mass production in the near future. PMID:28772946

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

Experimental measurement of spatially resolved electron density in a filament of a pulsed positive streamer discharge in water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Xiao Qiong; Niu, Zhi Wen; Ren, Chun-Sheng

2015-06-29

By combining a high-speed frame camera with a monochromator, the spatially resolved optical emission spectrum of hydrogen α line in a single filament of a pulsed positive streamer discharge in water has been experimentally measured. The spatially resolved electron densities in a single filament of a pulsed positive streamer discharge in water with a conductivity of 200 μS/cm were investigated. During the experiment, the average energy per pulse of discharge was 90.6 ± 13.6 mJ. The results show that the electron density in the streamer filament is 10{sup 17–18}/cm{sup 3}, and present a decreasing tendency along the axial direction of the streamer filamentmore » with increasing distance from the tip of the anode.« less

Optical properties of an indium doped CdSe nanocrystal: A density functional approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in; Mathew, Thomas

2016-05-06

We have studied the electronic and optical properties of a CdSe nanocrystal doped with n-type impurity atom. First principle calculations of the CdSe nanocrystal based on the density functional theory (DFT), as implemented in the Vienna Ab Initio Simulation Package (VASP) was used in the calculations. We have introduced a single Indium impurity atom into CdSe nanocrystal with 1.3 nm diameter. Nanocrystal surface dangling bonds are passivated with hydrogen atom. The band-structure, density of states and absorption spectra of the doped and undopted nanocrystals were discussed. Inclusion of the n-type impurity atom introduces an additional electron in conduction band, and significantlymore » alters the electronic and optical properties of undoped CdSe nanocrystal. Indium doped CdSe nannocrystal have potential applications in optoelectronic devices.« less

Interaction effects in Aharonov-Bohm-Kondo rings

NASA Astrophysics Data System (ADS)

Komijani, Yashar; Yoshii, Ryosuke; Affleck, Ian

2013-12-01

We study the conductance through an Aharonov-Bohm ring, containing a quantum dot in the Kondo regime in one arm, at finite temperature and arbitrary electronic density. We develop a general method for this calculation based on changing the basis to the screening and nonscreening channels. We show that an unusual term appears in the conductance, involving the connected four-point Green's function of the conduction electrons. However, this term and the terms quadratic in the T matrix can be eliminated at sufficiently low temperatures, leading to an expression for the conductance linear in the Kondo T matrix. Explicit results are given for temperatures that are high compared to the Kondo temperature.

Hot electrons injection in carbon nanotubes under the influence of quasi-static ac-field

NASA Astrophysics Data System (ADS)

Amekpewu, M.; Mensah, S. Y.; Musah, R.; Mensah, N. G.; Abukari, S. S.; Dompreh, K. A.

2016-07-01

The theory of hot electrons injection in carbon nanotubes (CNTs) where both dc electric field (Ez), and a quasi-static ac field exist simultaneously (i.e. when the frequency ω of ac field is much less than the scattering frequency v (ω ⪡ v or ωτ ⪡ 1, v =τ-1) where τ is relaxation time) is studied. The investigation is done theoretically by solving semi-classical Boltzmann transport equation with and without the presence of the hot electrons source to derive the current densities. Plots of the normalized current density versus dc field (Ez) applied along the axis of the CNTs in the presence and absence of hot electrons reveal ohmic conductivity initially and finally negative differential conductivity (NDC) provided ωτ ⪡ 1 (i.e. quasi- static case). With strong enough axial injection of the hot electrons, there is a switch from NDC to positive differential conductivity (PDC) about Ez ≥ 75 kV / cm and Ez ≥ 140 kV / cm for a zigzag CNT and an armchair CNT respectively. Thus, the most important tough problem for NDC region which is the space charge instabilities can be suppressed due to the switch from the NDC behaviour to the PDC behaviour predicting a potential generation of terahertz radiations whose applications are relevance in current-day technology, industry, and research.

Disordered two-dimensional electron systems with chiral symmetry

NASA Astrophysics Data System (ADS)

Markoš, P.; Schweitzer, L.

2012-10-01

We review the results of our recent numerical investigations on the electronic properties of disordered two dimensional systems with chiral unitary, chiral orthogonal, and chiral symplectic symmetry. Of particular interest is the behavior of the density of states and the logarithmic scaling of the smallest Lyapunov exponents in the vicinity of the chiral quantum critical point in the band center at E=0. The observed peaks or depressions in the density of states, the distribution of the critical conductances, and the possible non-universality of the critical exponents for certain chiral unitary models are discussed.

Electron heating and energy inventory during asymmetric reconnection in a laboratory plasma

NASA Astrophysics Data System (ADS)

Yoo, J.; Na, B.; Jara-Almonte, J.; Yamada, M.; Ji, H.; Roytershteyn, V.; Argall, M. R.; Fox, W.; Chen, L. J.

2017-12-01

Electron heating and the energy inventory during asymmetric reconnection are studied in the Magnetic Reconnection Experiment (MRX) [1]. In this plasma, the density ratio is about 8 across the current sheet. Typical features of asymmetric reconnection such as the large density gradients near the low-density-side separatrices, asymmetric in-plane electric field, and bipolar out-of-plane magnetic field are observed. Unlike the symmetric case [2], electrons are also heated near the low-density-side separatrices. The measured parallel electric field may explain the observed electron heating. Although large fluctuations driven by lower-hybrid drift instabilities are also observed near the low-density-side separatrices, laboratory measurements and numerical simulations reported here suggest that they do not play a major role in electron energization. The average electron temperature increase in the exhaust region is proportional to the incoming magnetic energy per an electron/ion pair but exceeds the scaling of the previous space observations [3]. This discrepancy is explained by differences in the boundary condition and system size. The profile of electron energy gain from the electric field shows that there is additional electron energy gain associated with the electron diamagnetic current besides a large energy gain near the X-line. This additional energy gain increases electron enthalpy, not the electron temperature. Finally, a quantitative analysis of the energy inventory during asymmetric reconnection is conducted. Unlike the symmetric case where the ion energy gain is about twice more than the electron energy gain [4], electrons and ions obtain a similar amount of energy during asymmetric reconnection. [1] J. Yoo et al., accepted for a publication in J. Geophys. Res. [2] J. Yoo et al., Phys. Plasmas 21, 055706 (2014). [3] T. Phan et al., Geophys. Res. Lett. 40, 4475 (2013). [4] M. Yamada et al., Nat. Comms. 5, 4474 (2014).

Radial Profiles of the Plasma Electron Characteristics in a 30 kW Arc Jet

NASA Technical Reports Server (NTRS)

Codron, Douglas A.; Nawaz, Anuscheh

2013-01-01

The present effort aims to strengthen modeling work conducted at the NASA Ames Research Center by measuring the critical plasma electron characteristics within and slightly outside of an arc jet plasma column. These characteristics are intended to give physical insights while assisting in the formulation of boundary conditions to validate full scale simulations. Single and triple Langmuir probes have been used to achieve estimates of the electron temperature (T(sub e)), electron number density (n(sub e)) and plasma potential (outside of the plasma column) as probing location is varied radially from the flow centerline. Both the electron temperature and electron number density measurements show a large dependence on radial distance from the plasma column centerline with T(sub e) approx. = (3 - 12 eV and n(sub e) approx. = 10(exp 12) - 10(exp 14)/cu cm.

Control of plasma properties in a short direct-current glow discharge with active boundaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adams, S. F.; Demidov, V. I., E-mail: vladimir.demidov@mail.wvu.edu; West Virginia University, Morgantown, West Virginia 26506

2016-02-15

To demonstrate controlling electron/metastable density ratio and electron temperature by applying negative voltages to the active (conducting) discharge wall in a low-pressure plasma with nonlocal electron energy distribution function, modeling has been performed in a short (lacking the positive-column region) direct-current glow discharge with a cold cathode. The applied negative voltage can modify the trapping of the low-energy part of the energetic electrons that are emitted from the cathode sheath and that arise from the atomic and molecular processes in the plasma within the device volume. These electrons are responsible for heating the slow, thermal electrons, while production of slowmore » electrons (ions) and metastable atoms is mostly due to the energetic electrons with higher energies. Increasing electron temperature results in increasing decay rate of slow, thermal electrons (ions), while decay rate of metastable atoms and production rates of slow electrons (ions) and metastable atoms practically are unchanged. The result is in the variation of electron/metastable density ratio and electron temperature with the variation of the wall negative voltage.« less

Dual roles of f electrons in mixing Al 3 p character into d -orbital conduction bands for lanthanide and actinide dialuminides

DOE PAGES

Altman, Alison B.; Pemmaraju, C. D.; Alayoglu, Selim; ...

2018-01-15

Correlated electron phenomena in lanthanide and actinide materials are driven by a complex interplay between the f and d orbitals. Here in this study, aluminum K-edge x-ray absorption spectroscopy and density functional theory calculations are used to evaluate the electronic structure of the dialuminides, MAl 2 (M = Ce, Sm, Eu, Yb, Lu, U, and Pu). The results show how the energy and occupancy of the 4f or 5f orbitals impacts mixing of Al 3p character into the 5d or 6d conduction bands, which has implications for understanding the magnetic and structural properties of correlated electron systems.

Dimmable electronic ballasts by variable power density modulation technique

NASA Astrophysics Data System (ADS)

Borekci, Selim; Kesler, Selami

2014-11-01

Dimming can be accomplished commonly by switching frequency and pulse density modulation techniques and a variable inductor. In this study, a variable power density modulation (VPDM) control technique is proposed for dimming applications. A fluorescent lamp is operated in several states to meet the desired lamp power in a modulation period. The proposed technique has the same advantages of magnetic dimming topologies have. In addition, a unique and flexible control technique can be achieved. A prototype dimmable electronic ballast is built and experiments related to it have been conducted. As a result, a 36WT8 fluorescent lamp can be driven for a desired lamp power from several alternatives without modulating the switching frequency.

Curie temperature behavior in half-metallic ferromagnetic double perovskites within the electronic correlation picture

NASA Astrophysics Data System (ADS)

Estrada, F.; Guzmán, E. J.; Navarro, O.; Avignon, M.

2018-05-01

The half-metallic ferromagnetic compound Sr2FeMoO6 is considered a fundamental material to understand the role of electronic parameters controlling the half-metallic ground state and high Curie temperature in double perovskite. We present an electronic approach using the Green's function technique and the renormalization perturbation expansion method to study the thermodynamical properties of double perovskites. The model is based on a correlated electron picture with localized Fe spins and conduction electrons interacting with the local spins via a double-exchange-type mechanism. Electron correlations within the conduction band are also included in order to study the Curie temperature TC. Our results show an increases of TC by increasing the carrier density in La-doped Sr2FeMoO6 compounds in contrast to the case of uncorrelated itinerant electrons.

The spatial distribution of two dimensional electron gas at the LaTiO3/KTaO3 interface

NASA Astrophysics Data System (ADS)

Song, Qi; Peng, Rui; Xu, Haichao; Feng, Donglai

2017-08-01

We report the photoemission spectroscopy studies on the newly discovered two dimensional electron gas (2DEG) system LaTiO3/KTaO3, whose interfacial carriers show much higher mobility than that in LaAlO3/SrTiO3 at room temperature, thus raising the application prospect of transition metal oxide-based 2DEG. By measuring the density of states at the Fermi energy (EF), we directly reveal the spatial distribution of the conducting electrons at the interface. The density of states near EF of the topmost LTO reaches the highest when LTO is 2-unit-cell thick, and diminishes at the 5th unit cell of LTO. We discussed the origin of such a spacial distribution of conducting electrons and its relation with 2DEG, and proposed two possible scenarios based on electrostatic relaxations and chemical reconstructions. These results offer experimental clues in understanding the characteristics and origin of the 2DEG, and also shed light on improving the performance of 2DEG.

The spatial distribution of two dimensional electron gas at the LaTiO3/KTaO3 interface.

PubMed

Song, Qi; Peng, Rui; Xu, Haichao; Feng, Donglai

2017-08-09

We report the photoemission spectroscopy studies on the newly discovered two dimensional electron gas (2DEG) system LaTiO 3 /KTaO 3 , whose interfacial carriers show much higher mobility than that in LaAlO 3 /SrTiO 3 at room temperature, thus raising the application prospect of transition metal oxide-based 2DEG. By measuring the density of states at the Fermi energy (E F ), we directly reveal the spatial distribution of the conducting electrons at the interface. The density of states near E F of the topmost LTO reaches the highest when LTO is 2-unit-cell thick, and diminishes at the 5th unit cell of LTO. We discussed the origin of such a spacial distribution of conducting electrons and its relation with 2DEG, and proposed two possible scenarios based on electrostatic relaxations and chemical reconstructions. These results offer experimental clues in understanding the characteristics and origin of the 2DEG, and also shed light on improving the performance of 2DEG.

High-density two-dimensional electron system induced by oxygen vacancies in ZnO

NASA Astrophysics Data System (ADS)

Rödel, T. C.; Dai, J.; Fortuna, F.; Frantzeskakis, E.; Le Fèvre, P.; Bertran, F.; Kobayashi, M.; Yukawa, R.; Mitsuhashi, T.; Kitamura, M.; Horiba, K.; Kumigashira, H.; Santander-Syro, A. F.

2018-05-01

We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultrahigh vacuum and characterize its electronic structure by using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two s -type subbands, that we compare with the d -like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a two-dimensional Fermi liquid with a Debye distribution of phonons.

New secondary batteries utilizing electronically conductive polymer cathodes

NASA Technical Reports Server (NTRS)

Martin, Charles R.; White, Ralph E.

1989-01-01

The objectives of this project are to optimize the transport rates in electronically conductive polypyrrole films by controlling the morphology of the film and to assess the utility of these films as cathodes in a lithium/polypyrrole secondary battery. During this research period, progress has been made in improving the charge transport rate of the supermolecular-engineered polypyrrole electrode by eliminating the polypyrrole baselayer that hampered earlier work. Also, the fibril density of the polypyrrole electrode was increased, providing more electroactive sites per unit area.

Aerosols: The key to understanding Titan's lower ionosphere

NASA Astrophysics Data System (ADS)

Molina-Cuberos, G. J.; Cardnell, S.; García-Collado, A. J.; Witasse, O.; López-Moreno, J. J.

2018-04-01

The Permittivity Wave and Altimetry system on board the Huygens probe observed an ionospheric hidden layer at a much lower altitude than the main ionosphere during its descent through the atmosphere of Titan, the largest satellite of Saturn. Previous studies predicted a similar ionospheric layer. However, neither previous nor post-Huygens theoretical models have been able to reproduce the measurements of the electrical conductivity and charge densities reported by the Mutual Impedance (MI) and Relaxation Probe (RP) sensors. The measurements were made from an altitude of 140 km down to the ground and show a maximum of charge densities of ≈ 2 ×109 m-3 positive ions and ≈ 450 ×106 m-3 electrons at approximately 65 km. Such a large difference between positive and negative charge densities has not yet been understood. Here, by making use of electron and ion capture processes in to aerosols, we are able to model both electron and positive ion number densities and to reconcile experimental data and model results.

Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO 3

DOE PAGES

Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

2015-09-08

First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO 3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhancemore » the binding of this state. As a result, the energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.« less

Splitting of a vertical multiwalled carbon nanotube carpet to a graphene nanoribbon carpet and its use in supercapacitors.

PubMed

Zhang, Chenguang; Peng, Zhiwei; Lin, Jian; Zhu, Yu; Ruan, Gedeng; Hwang, Chih-Chau; Lu, Wei; Hauge, Robert H; Tour, James M

2013-06-25

Potassium vapor was used to longitudinally split vertically aligned multiwalled carbon nanotubes carpets (VA-CNTs). The resulting structures have a carpet of partially split MWCNTs and graphene nanoribbons (GNRs). The split structures were characterized by scanning electron microscopy, transmission electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. When compared to the original VA-CNTs carpet, the split VA-CNTs carpet has enhanced electrochemical performance with better specific capacitance in a supercapacitor. Furthermore, the split VA-CNTs carpet has excellent cyclability as a supercapacitor electrode material. There is a measured maximum power density of 103 kW/kg at an energy density of 5.2 Wh/kg and a maximum energy density of 9.4 Wh/kg. The superior electrochemical performances of the split VA-CNTs can be attributed to the increased surface area for ion accessibility after splitting, and the lasting conductivity of the structure with their vertical conductive paths based on the preserved GNR alignment.

Opposing effects of stacking faults and antisite domain boundaries on the conduction band edge in kesterite quaternary semiconductors

NASA Astrophysics Data System (ADS)

Park, Ji-Sang; Kim, Sunghyun; Walsh, Aron

2018-01-01

We investigated stability and the electronic structure of extended defects including antisite domain boundaries and stacking faults in the kesterite-structured semiconductors, Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe). Our hybrid density functional theory calculations show that stacking faults in CZTS and CZTSe induce a higher conduction band edge than the bulk counterparts, and thus the stacking faults act as electron barriers. Antisite domain boundaries, however, accumulate electrons as the conduction band edge is reduced in energy, having an opposite role. An Ising model was constructed to account for the stability of stacking faults, which shows the nearest-neighbor interaction is stronger in the case of the selenide.

Electronic and transport properties of fluorite structure of La2Ce2O7

NASA Astrophysics Data System (ADS)

Mahida, H. R.; Singh, Deobrat; Gupta, Sanjeev K.; Sonvane, Yogesh; Thakor, P. B.

2017-05-01

In this paper, we have symmetrically investigated the structural, electronic and transport properties of fluorite structure of lanthanum cerate oxide (La2Ce2O7) using density functional theory (DFT). The electronic band structure of La2Ce2O7 show semiconducting in nature with band gap of 1.54 eV (indirect at R-X points) and 1.71 eV (direct at R points). We have also calculated the susceptibility, hall resistance, electrical, and thermal conductivity by using Boltztrap equation. The electrical conductivity decreases where as thermal conductivity increases with increase in the temperature. Our result shows that La2Ce2O7 has application in Proton exchange membrane (PEM) fuel cells applications.

Conduction band fluctuation scattering due to alloy clustering in barrier layers in InAlN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Li, Qun; Chen, Qian; Chong, Jing

2017-12-01

In InAlN/GaN heterostructures, alloy clustering-induced InAlN conduction band fluctuations interact with electrons penetrating into the barrier layers and thus affect the electron transport. Based on the statistical description of InAlN compositional distribution, a theoretical model of the conduction band fluctuation scattering (CBFS) is presented. The model calculations show that the CBFS-limited mobility decreases with increasing two-dimensional electron gas sheet density and is inversely proportional to the squared standard deviation of In distribution. The AlN interfacial layer can effectively suppress the CBFS via decreasing the penetration probability. This model is directed towards understanding the transport properties in heterostructure materials with columnar clusters.

Layered-MnO₂ Nanosheet Grown on Nitrogen-Doped Graphene Template as a Composite Cathode for Flexible Solid-State Asymmetric Supercapacitor.

PubMed

Liu, Yongchuan; Miao, Xiaofei; Fang, Jianhui; Zhang, Xiangxin; Chen, Sujing; Li, Wei; Feng, Wendou; Chen, Yuanqiang; Wang, Wei; Zhang, Yining

2016-03-02

Flexible solid-state supercapacitors provide a promising energy-storage alternative for the rapidly growing flexible and wearable electronic industry. Further improving device energy density and developing a cheap flexible current collector are two major challenges in pushing the technology forward. In this work, we synthesize a nitrogen-doped graphene/MnO2 nanosheet (NGMn) composite by a simple hydrothermal method. Nitrogen-doped graphene acts as a template to induce the growth of layered δ-MnO2 and improves the electronic conductivity of the composite. The NGMn composite exhibits a large specific capacitance of about 305 F g(-1) at a scan rate of 5 mV s(-1). We also create a cheap and highly conductive flexible current collector using Scotch tape. Flexible solid-state asymmetric supercapacitors are fabricated with NGMn cathode, activated carbon anode, and PVA-LiCl gel electrolyte. The device can achieve a high operation voltage of 1.8 V and exhibits a maximum energy density of 3.5 mWh cm(-3) at a power density of 0.019 W cm(-3). Moreover, it retains >90% of its initial capacitance after 1500 cycles. Because of its flexibility, high energy density, and good cycle life, NGMn-based flexible solid state asymmetric supercapacitors have great potential for application in next-generation portable and wearable electronics.

Pressure Balance at Mars and Solar Wind Interaction with the Martian Atmosphere

NASA Technical Reports Server (NTRS)

Krymskii, A. M.; Ness, N. F.; Crider, D. H.; Breus, T. K.; Acuna, M. H.; Hinson, D.

2003-01-01

The strongest crustal fields are located in certain regions in the Southern hemisphere. In the Northern hemisphere, the crustal fields are rather weak and usually do not prevent direct interaction between the SW and the Martian ionosphere/atmosphere. Exceptions occur in the isolated mini-magnetospheres formed by the crustal anomalies. Electron density profiles of the ionosphere of Mars derived from radio occultation data obtained by the Radio Science Mars Global Surveyor (MGS) experiment have been compared with the crustal magnetic fields measured by the MGS Magnetometer/Electron Reflectometer (MAG/ER) experiment. A study of 523 electron density profiles obtained at latitudes from +67 deg. to +77 deg. has been conducted. The effective scale-height of the electron density for two altitude ranges, 145-165 km and 165-185 km, and the effective scale-height of the neutral atmosphere density in the vicinity of the ionization peak have been derived for each of the profiles studied. For the regions outside of the potential mini-magnetospheres, the thermal pressure of the ionospheric plasma for the altitude range 145-185 km has been estimated. In the high latitude ionosphere at Mars, the total pressure at altitudes 160 and 180 km has been mapped. The solar wind interaction with the ionosphere of Mars and origin of the sharp drop of the electron density at the altitudes 200-210 km will be discussed.

Effect of B, N, Ge, Sn, K doping on electronic-transport properties of (5, 0) zigzag carbon nanotube

NASA Astrophysics Data System (ADS)

Kamalian, Monir; Seyed Jalili, Yousef; Abbasi, Afshin

2018-04-01

In this paper the effect of impurity on the electronic properties and quantum conductance of zigzag (5, 0) carbon nanotube have been studied by using the Density Functional Theory (DFT) combined with Non-Equilibrium Green’s Function (NEGF) formalism with TranSIESTA software. The effect of Boron (B), Nitrogen (N), Germanium (Ge), Tin (Sn) and Potassium (K) impurities on the CNT conduction behavior and physical characteristics, like density of states (DOS), band structure, transmission coefficients and quantum conductance was considered and discussed simultaneously. The current‑voltage (I‑V) curves of all the proposed models were studied for comparative study under low-bias conditions. The distinct changes in conductance reported as the positions, number and type of dopants was varied in central region of the CNT between two electrodes at different bias voltages. This suggested conductance enhancement mechanism for the charge transport in the doped CNT at different positions is important for the design of CNT based nanoelectronic devices. The results show that Germanium, Tin and Potassium dopant atoms has increased the conductance of the model manifold than other doping atoms furthermore 10 Boron and 10 Nitrogen dopant atoms showed the amazing property of Negative Differential Resistance (NDR).

Estimate of size distribution of charged MSPs measured in situ in winter during the WADIS-2 sounding rocket campaign

NASA Astrophysics Data System (ADS)

Asmus, Heiner; Staszak, Tristan; Strelnikov, Boris; Lübken, Franz-Josef; Friedrich, Martin; Rapp, Markus

2017-08-01

We present results of in situ measurements of mesosphere-lower thermosphere dusty-plasma densities including electrons, positive ions and charged aerosols conducted during the WADIS-2 sounding rocket campaign. The neutral air density was also measured, allowing for robust derivation of turbulence energy dissipation rates. A unique feature of these measurements is that they were done in a true common volume and with high spatial resolution. This allows for a reliable derivation of mean sizes and a size distribution function for the charged meteor smoke particles (MSPs). The mean particle radius derived from Schmidt numbers obtained from electron density fluctuations was ˜ 0.56 nm. We assumed a lognormal size distribution of the charged meteor smoke particles and derived the distribution width of 1.66 based on in situ-measured densities of different plasma constituents. We found that layers of enhanced meteor smoke particles' density measured by the particle detector coincide with enhanced Schmidt numbers obtained from the electron and neutral density fluctuations. Thus, we found that large particles with sizes > 1 nm were stratified in layers of ˜ 1 km thickness and lying some kilometers apart from each other.

Ultralight Conductive Silver Nanowire Aerogels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qian, Fang; Lan, Pui Ching; Freyman, Megan C.

Low-density metal foams have many potential applications in electronics, energy storage, catalytic supports, fuel cells, sensors, and medical devices. Here in this work, we report a new method for fabricating ultralight, conductive silver aerogel monoliths with predictable densities using silver nanowires. Silver nanowire building blocks were prepared by polyol synthesis and purified by selective precipitation. Silver aerogels were produced by freeze-casting nanowire aqueous suspensions followed by thermal sintering to weld the nanowire junctions. As-prepared silver aerogels have unique anisotropic microporous structures, with density precisely controlled by the nanowire concentration, down to 4.8 mg/cm 3 and an electrical conductivity up tomore » 51 000 S/m. Lastly, mechanical studies show that silver nanowire aerogels exhibit “elastic stiffening” behavior with a Young’s modulus up to 16 800 Pa.« less

Ultralight Conductive Silver Nanowire Aerogels

DOE PAGES

Qian, Fang; Lan, Pui Ching; Freyman, Megan C.; ...

2017-09-05

Low-density metal foams have many potential applications in electronics, energy storage, catalytic supports, fuel cells, sensors, and medical devices. Here in this work, we report a new method for fabricating ultralight, conductive silver aerogel monoliths with predictable densities using silver nanowires. Silver nanowire building blocks were prepared by polyol synthesis and purified by selective precipitation. Silver aerogels were produced by freeze-casting nanowire aqueous suspensions followed by thermal sintering to weld the nanowire junctions. As-prepared silver aerogels have unique anisotropic microporous structures, with density precisely controlled by the nanowire concentration, down to 4.8 mg/cm 3 and an electrical conductivity up tomore » 51 000 S/m. Lastly, mechanical studies show that silver nanowire aerogels exhibit “elastic stiffening” behavior with a Young’s modulus up to 16 800 Pa.« less

Assigning crystallographic electron densities with free energy calculations—The case of the fluoride channel Fluc

PubMed Central

2018-01-01

Approximately 90% of the structures in the Protein Data Bank (PDB) were obtained by X-ray crystallography or electron microscopy. Whereas the overall quality of structure is considered high, thanks to a wide range of tools for structure validation, uncertainties may arise from density maps of small molecules, such as organic ligands, ions or water, which are non-covalently bound to the biomolecules. Even with some experience and chemical intuition, the assignment of such disconnected electron densities is often far from obvious. In this study, we suggest the use of molecular dynamics (MD) simulations and free energy calculations, which are well-established computational methods, to aid in the assignment of ambiguous disconnected electron densities. Specifically, estimates of (i) relative binding affinities, for instance between an ion and water, (ii) absolute binding free energies, i.e., free energies for transferring a solute from bulk solvent to a binding site, and (iii) stability assessments during equilibrium simulations may reveal the most plausible assignments. We illustrate this strategy using the crystal structure of the fluoride specific channel (Fluc), which contains five disconnected electron densities previously interpreted as four fluoride and one sodium ion. The simulations support the assignment of the sodium ion. In contrast, calculations of relative and absolute binding free energies as well as stability assessments during free MD simulations suggest that four of the densities represent water molecules instead of fluoride. The assignment of water is compatible with the loss of these densities in the non-conductive F82I/F85I mutant of Fluc. We critically discuss the role of the ion force fields for the calculations presented here. Overall, these findings indicate that MD simulations and free energy calculations are helpful tools for modeling water and ions into crystallographic density maps. PMID:29771936

Nonequilibrium, steady-state electron transport with N-representable density matrices from the anti-Hermitian contracted Schrödinger equation

NASA Astrophysics Data System (ADS)

Rothman, Adam E.; Mazziotti, David A.

2010-03-01

We study molecular conductivity for a one-electron, bath-molecule-bath model Hamiltonian. The primary quantum-mechanical variable is the one-electron reduced density matrix (1-RDM). By identifying similarities between the steady-state Liouville equation and the anti-Hermitian contracted Schrödinger equation (ACSE) [D. A. Mazziotti, Phys. Rev. A 75, 022505 (2007)], we develop a way of enforcing nonequilibrium, steady-state behavior in a time-independent theory. Our results illustrate the relationship between current and voltage in molecular junctions assuming that the total number of electrons under consideration can be fixed across all driving potentials. The impetus for this work is a recent study by Subotnik et al. that also uses the 1-RDM to study molecular conductivity under different assumptions regarding the total number of electrons [J. E. Subotnik et al., J. Chem. Phys. 130, 144105 (2009)]. Unlike calculations in the previous study, our calculations result in 1-RDMs that are fully N-representable. The present work maintains N-representability through a bath-bath mixing that is related to a time-independent relaxation of the baths in the absence of the molecule, as governed by the ACSE. A lack of N-representability can be important since it corresponds to occupying energy states in the molecule or baths with more than one electron or hole (the absence of an electron) in violation of the Pauli principle. For this reason the present work may serve as an important, albeit preliminary, step in designing a 2-RDM/ACSE method for studying steady-state molecular conductivity with an explicit treatment of electron correlation.

Influence of nanotube length and density on the plasmonic terahertz response of single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Karlsen, P.; Shuba, M. V.; Beckerleg, C.; Yuko, D. I.; Kuzhir, P. P.; Maksimenko, S. A.; Ksenevich, V.; Viet, Ho; Nasibulin, A. G.; Tenne, R.; Hendry, E.

2018-01-01

We measure the conductivity spectra of thin films comprising bundled single-walled carbon nanotubes (CNTs) of different average lengths in the frequency range 0.3-1000 THz and temperature interval 10-530 K. The observed temperature-induced changes in the terahertz conductivity spectra are shown to depend strongly on the average CNT length, with a conductivity around 1 THz that increases/decreases as the temperature increases for short/long tubes. This behaviour originates from the temperature dependence of the electron scattering rate, which we obtain from Drude fits of the measured conductivity in the range 0.3-2 THz for 10 μm length CNTs. This increasing scattering rate with temperature results in a subsequent broadening of the observed THz conductivity peak at higher temperatures and a shift to lower frequencies for increasing CNT length. Finally, we show that the change in conductivity with temperature depends not only on tube length, but also varies with tube density. We record the effective conductivities of composite films comprising mixtures of WS2 nanotubes and CNTs versus CNT density for frequencies in the range 0.3-1 THz, finding that the conductivity increases/decreases for low/high density films as the temperature increases. This effect arises due to the density dependence of the effective length of conducting pathways in the composite films, which again leads to a shift and temperature dependent broadening of the THz conductivity peak.

Far Infrared and Electrical Transport Studies of Oxide - Charge - Induced Localized States in a Model Two-Dimensional System.

NASA Astrophysics Data System (ADS)

Glaser, Evan R.

Far-infrared measurements of intersubband absorption spectra and dc electrical transport studies of n-inversion layers in (100) Si. Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) with mobile positive ions in the oxide are performed at temperatures between 1.7 and 80K. The results provide evidence for the existence of impurity bands and for screening of these localized states in this quasi two-dimensional electronic system. The properties of the elec- tronic states in the sub-micron (<10('-6)m) conducting layer of the MOS devices are probed in detail by conductance, capacitance and trans- conductance measurements and by optical absorption measure- ments with the aid of a Far-Infrared Fourier Transform Spectrometer. Data are obtained with positive oxide charge density as a parameter, varied by the drifting at room temperature of controlled amounts of. positive ions ((DELTA)N(,ox)) to the oxide-semiconductor interface (1.3 x 10('11) (LESSTHEQ) (DELTA)N(,ox) (LESSTHEQ) 7.0 x 10('11) cm('-2)) in the presence of positive gate voltages. (3-7V). In addition, high mobility devices in which no positive impurity ions had been purposely introduced are investigated to provide a basis for comparison with the corresponding results from poor mobil- ity devices. Studies are carried out for a wide range of net interfacial. oxide charge densities (2 x 10('10) cm('-2) (LESSTHEQ) N(,ox) (LESSTHEQ) 1 x 10('12) cm('-2)), and substrate source bias voltages (-9V (LESSTHEQ) V(,S) (LESSTHEQ) 1V) with the goal of. attaining a better understanding of the nature of localization effects (e.g., two-dimensional carrier localization), interface scattering, and many-body Coulombic interactions (e.g., screening effects) in these structures. The present measurements provide evidence for the existence of impurity bands and long band tails at low electron densities (n(,s) (LESSTHEQ) N(,ox)) associated with subbands due to both the inequivalent conduction-band valleys and for screening of these. localized states at high electron densities (n(,s) >(, )N(,ox)). In addition, at high inversion layer electron densities the intersubband resonance linewidths at 4.2K as a function of positive oxide charge density are found to be correlated with the corresponding scattering rates determined from the low temperature effective mobilities. The results of these studies are compared with recent experimental investigations of this and similar systems and with predictions of available theoretical models.

Electronic structure of strongly reduced (1 ‾ 1 1) surface of monoclinic HfO2

NASA Astrophysics Data System (ADS)

Cheng, YingXing; Zhu, Linggang; Ying, Yile; Zhou, Jian; Sun, Zhimei

2018-07-01

Material surface is playing an increasingly important role in electronic devices as their size down to nanoscale. Here, by first-principles calculations we studied the surface oxygen-vacancies (Vos) induced electronic-structure variation of HfO2 , in order to explore its potential applications in surface-controlled electronic devices. Firstly, it is found that single Vo tends to segregate onto the surface and attracts each other as they form pairs, making the formation of vacancies-contained functional surface possible. Then extensive Vo-chains whose formation/rupture can represent the high/low conductivity state are constructed. The electronic states induced by the Vos remain localized in the band-gap region for most of the Vo-chains studied here. A transition to a metallic conductance is found in metastable Vo-chain with formation energy increased by 0.25 eV per Vo. Moreover, we highlight the significance of the Hubbard U correction for density functional theory when studying the electronic-structure based conductance in the oxides. By comprehensive calculations, we find a conductivity-stability dilemma of the Vo-chains, providing guideline for understanding and designing the electronic devices based on HfO2 surface.

A Density Functional Theory Study of New Boron Nanotubes

NASA Astrophysics Data System (ADS)

Chen, Zhao-Hua; Xie, Zun

2017-11-01

Using first-principles calculations, a series of new boron nanotubes (BNTs), which show various electronic properties, were theoretically predicted. Stable nanotubes with various chiral vectors and diameters can be formed by rolling up the boron sheet with relative stability [H. Tang and S. I. Beigi, Phys. Rev. B 82, 115412 (2010).]. By increasing the diameter for BNT, the stability is enhanced. The calculated density of states and band structures demonstrate that all the predicted BNTs are metallic, regardless of their diameter and chirality. The multicentre chemical bonds of the relatively stable boron sheet and BNTs are analysed using the deformation electron density. Within our study, the BNTs all have metallic conductive characteristics, in addition to having a low effective quality and high carrier concentration, which are very good nanoconductive material properties and could be combined to form high-power electrodes for lithium-ion batteries such as those used in many modern electronics.

CDW fluctuations and the pseudogap in the single-particle conductivity of quasi-1D Peierls CDW systems: II.

PubMed

Kupčić, I; Rukelj, Z; Barišić, S

2014-05-14

The current-dipole Kubo formula for the dynamical conductivity of interacting multiband electronic systems derived in Kupčić et al (2013 J. Phys.: Condens. Matter 25 145602) is illustrated on the Peierls model for quasi-one-dimensional systems with the charge-density-wave (CDW) instability. Using the microscopic representation of the Peierls model, it is shown in which way the scattering of conduction electrons by CDW fluctuations affects the dynamical conductivity at temperatures above and well below the CDW transition temperature. The generalized Drude formula for the intraband conductivity is derived in the ordered CDW state well below the transition temperature. The natural extension of this formula to the case where the intraband memory function is dependent on frequency and wave vectors is also presented. It is shown that the main adventage of such a memory-function conductivity model is that it can be easily extended to study the dynamical conductivity and the electronic Raman scattering in more complicated multiband electronic systems in a way consistent with the law of conservation of energy. The incoherent interband conductivity in the CDW pseudogap state is briefly discussed as well.

Inverse photoelectron spectrometer with magnetically focused electron gun

NASA Technical Reports Server (NTRS)

Krainsky, Isay L.

1991-01-01

An inverse photoelectron spectrometer is described which is based on the design of a magnetically focused low energy electron gun. The magnetic lens extends its field over a relatively large segment of the electron trajectory, which could provide a better focusing effect on a high-current-density low-velocity electron beam, providing the magnetic field in the vicinity of the target is reduced sufficiently to preserve the collinearity of the beam. In order to prove the concept, ray tracing is conducted using the Herrmannsfeldt program for solving electron trajectories in electrostatic and magnetostatic focusing systems. The program allows the calculation of the angles of the electron trajectories with the z axis, at the target location. The results of the ray-tracing procedure conducted for this gun are discussed. Some of the advantages of the magnetic focusing are also discussed.

Laboratory electron exposure of TSS-1 thermal control coating

NASA Technical Reports Server (NTRS)

Vaughn, J. A.; Mccollum, M.; Carruth, M. R., Jr.

1995-01-01

RM400, a conductive thermal control coating, was developed for use on the exterior shell of the tethered satellite. Testing was performed by the Engineering Physics Division to quantify effects of the space environment on this coating and its conductive and optical properties. Included in this testing was exposure of RM400 to electrons with energies ranging from 0.1 to 1 keV, to simulate electrons accelerated from the ambient space plasma when the tethered satellite is fully deployed. During this testing, the coating was found to luminesce, and a prolonged exposure of the coating to high-energy electrons caused the coating to darken. This report describes the tests done to quantify the degradation of the thermal control properties caused by electron exposure and to measure the luminescence as a function of electron energy and current density to the satellite.

Polypyrrole based nanocomposites for supercapacitor applications: A review

NASA Astrophysics Data System (ADS)

Sardar, A.; Gupta, P. S.

2018-05-01

Recently conducting polymers have attracted great interest for supercapacitor applications. Among conducting polymers polypyrrole is most popular due to its unique electrical conductivity, optoelectrical properties, redox property and excellent environmental stability. In this article, we present a comprehensive review of polypyrrole and polypyrrole based nanocomposites for supercapacitor applications. We have included study of various parameters like power density, energy density, specific-capacitance by various authors for different kinds of nanocomposites where fillers are metal oxides, metal sulphides, graphene etc. Some polypyrrole nanocomposits show good electrochemical performances. The extremely stable supercapacitors with excellent flexibility and scalability hold considerable promise for the commerical application of flexible and wearable electronics.

Inkjet-Printed Electrodes on A4 Paper Substrates for Low-Cost, Disposable, and Flexible Asymmetric Supercapacitors.

PubMed

Sundriyal, Poonam; Bhattacharya, Shantanu

2017-11-08

Printed electronics is widely gaining much attention for compact and high-performance energy-storage devices because of the advancement of flexible electronics. The development of a low-cost current collector, selection, and utilization of the proper material deposition tool and improvement of the device energy density are major challenges for the existing flexible supercapacitors. In this paper, we have reported an inkjet-printed solid-state asymmetric supercapacitor on commercial A4 paper using a low-cost desktop printer (EPSON L130). The physical properties of all inks have been carefully optimized so that the developed inks are within the printable range, i.e., Fromm number of 4 < Z < 14 for all inks. The paper substrate is made conducting (sheet resistance ∼ 1.6 Ω/sq) by printing 40 layers of conducting graphene oxide (GO) ink on its surface. The developed conducting patterns on paper are further printed with a GO-MnO 2 nanocomposite ink to make a positive electrode, and another such structure is printed with activated carbon ink to form a negative electrode. A combination of both of these electrodes is outlaid by fabricating an asymmetric supercapacitor. The assembled asymmetric supercapacitor with poly(vinyl alcohol) (PVA)-LiCl gel electrolyte shows a stable potential window of 0-2.0 V and exhibits outstanding flexibility, good cyclic stability, high rate capability, and high energy density. The fabricated paper-substrate-based flexible asymmetric supercapacitor also displays an excellent electrochemical performances, e.g., a maximum areal capacitance of 1.586 F/cm 2 (1023 F/g) at a current density of 4 mA/cm 2 , highest energy density of 22 mWh/cm 3 at a power density of 0.099 W/cm 3 , a capacity retention of 89.6% even after 9000 charge-discharge cycles, and a low charge-transfer resistance of 2.3 Ω. So, utilization of inkjet printing for the development of paper-based flexible electronics has a strong potential for embedding into the next generation low-cost, compact, and wearable energy-storage devices and other printed electronic applications.

Strain Modulation of Electronic and Heat Transport Properties of Bilayer Boronitrene

NASA Astrophysics Data System (ADS)

Yang, Ming; Sun, Fang-Yuan; Wang, Rui-Ning; Zhang, Hang; Tang, Da-Wei

2017-10-01

Strain engineering has been proven as an effective approach to modify electronic and thermal properties of materials. Recently, strain effects on two-dimensional materials have become important relevant topics in this field. We performed density functional theory studies on the electronic and heat transport properties of bilayer boronitrene samples under an isotropic strain. We demonstrate that the strain will reduce the band gap width but keep the band gap type robust and direct. The strain will enhance the thermal conductivity of the system because of the increase in specific heat. The thermal conductivity was studied as a function of the phonon mean-free path.

Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal-Hexagonal Boron Nitride-Graphene Junctions.

PubMed

Chandni, U; Watanabe, K; Taniguchi, T; Eisenstein, J P

2016-12-14

Electron tunneling spectroscopy measurements on van der Waals heterostructures consisting of metal and graphene (or graphite) electrodes separated by atomically thin hexagonal boron nitride tunnel barriers are reported. The tunneling conductance, dI/dV, at low voltages is relatively weak, with a strong enhancement reproducibly observed to occur at around |V| ≈ 50 mV. While the weak tunneling at low energies is attributed to the absence of substantial overlap, in momentum space, of the metal and graphene Fermi surfaces, the enhancement at higher energies signals the onset of inelastic processes in which phonons in the heterostructure provide the momentum necessary to link the Fermi surfaces. Pronounced peaks in the second derivative of the tunnel current, d 2 I/dV 2 , are observed at voltages where known phonon modes in the tunnel junction have a high density of states. In addition, features in the tunneling conductance attributed to single electron charging of nanometer-scale defects in the boron nitride are also observed in these devices. The small electronic density of states of graphene allows the charging spectra of these defect states to be electrostatically tuned, leading to "Coulomb diamonds" in the tunneling conductance.

A mathematical model for predicting cyclic voltammograms of electronically conductive polypyrrole

NASA Technical Reports Server (NTRS)

Yeu, Taewhan; Nguyen, Trung V.; White, Ralph E.

1988-01-01

Polypyrrole is an attractive polymer for use as a high-energy-density secondary battery because of its potential as an inexpensive, lightweight, and noncorrosive electrode material. A mathematical model to simulate cyclic voltammograms for polypyrrole is presented. The model is for a conductive porous electrode film on a rotating disk electrode (RDE) and is used to predict the spatial and time dependence of concentration, overpotential, and stored charge profiles within a polypyrrole film. The model includes both faradic and capacitance charge components in the total current density expression.

A mathematical model for predicting cyclic voltammograms of electronically conductive polypyrrole

NASA Technical Reports Server (NTRS)

Yeu, Taewhan; Nguyen, Trung V.; White, Ralph E.

1987-01-01

Polypyrrole is an attractive polymer for use as a high-energy-density secondary battery because of its potential as an inexpensive, lightweight, and noncorrosive electrode material. A mathematical model to simulate cyclic voltammograms for polypyrrole is presented. The model is for a conductive porous electrode film on a rotating disk electrode (RDE) and is used to predict the spatial and time dependence of concentration, overpotential, and stored charge profiles within a polypyrrole film. The model includes both faradic and capacitance charge components in the total current density expression.

Characterizing the performance of an affordable, multichannel conductivity probe for density measurements in stratified flows

NASA Astrophysics Data System (ADS)

Subramanian, Balaji; Carminati, Marco; Luzzatto-Fegiz, Paolo

2017-11-01

In stratified flows, conductivity (combined with temperature) is often used to measure density. The conductivity probes typically used can resolve very fine spatial scales, but on the downside they are fragile, expensive, sensitive to environmental noise and have only single channel capability. Recently a low-cost, robust, arduino-based probe called Conduino was developed, which can be valuable in a wide range of applications where resolving extremely small spatial scales is not needed. This probe uses micro-USB connectors as actual conductivity sensors with a custom designed electronic board for simultaneous acquisition from multiple probes, with conductivity resolution comparable to commercially available PME conductivity probe. A detailed assessment of performance of this Conduino probe is described here. To establish time response and sensitivity as a function of electrode geometry, we build a variety of shapes for different kinds of applications, with tip spacing ranging from 0.5-2.5 mm, and with electrode length ranging from 2.3-6 mm. We set up a two-layer density profile and traverse it rapidly, yielding a time response comparable to PME. The Conduino's multi-channel capability is used to operate probe arrays, which helps to construct density fields in stratified flows.

Characteristics of temporal evolution of particle density and electron temperature in helicon discharge

NASA Astrophysics Data System (ADS)

Yang, Xiong; Cheng, Mousen; Guo, Dawei; Wang, Moge; Li, Xiaokang

2017-10-01

On the basis of considering electrochemical reactions and collision relations in detail, a direct numerical simulation model of a helicon plasma discharge with three-dimensional two-fluid equations was employed to study the characteristics of the temporal evolution of particle density and electron temperature. With the assumption of weak ionization, the Maxwell equations coupled with the plasma parameters were directly solved in the whole computational domain. All of the partial differential equations were solved by the finite element solver in COMSOL MultiphysicsTM with a fully coupled method. In this work, the numerical cases were calculated with an Ar working medium and a Shoji-type antenna. The numerical results indicate that there exist two distinct modes of temporal evolution of the electron and ground atom density, which can be explained by the ion pumping effect. The evolution of the electron temperature is controlled by two schemes: electromagnetic wave heating and particle collision cooling. The high RF power results in a high peak electron temperature while the high gas pressure leads to a low steady temperature. In addition, an OES experiment using nine Ar I lines was conducted using a modified CR model to verify the validity of the results by simulation, showing that the trends of temporal evolution of electron density and temperature are well consistent with the numerically simulated ones.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Qing; Gerhardt, Michael R.; Aziz, Michael J.

We measure the polarization characteristics of a quinone-bromide redox flow battery with interdigitated flow fields, using electrochemical impedance spectroscopy and voltammetry of a full cell and of a half cell against a reference electrode. We find linear polarization behavior at 50% state of charge all the way to the short-circuit current density of 2.5 A/cm 2. We uniquely identify the polarization area-specific resistance (ASR) of each electrode, the membrane ASR to ionic current, and the electronic contact ASR. We use voltage probes to deduce the electronic current density through each sheet of carbon paper in the quinone-bearing electrode. By alsomore » interpreting the results using the Newman 1-D porous electrode model, we deduce the volumetric exchange current density of the porous electrode. We uniquely evaluate the power dissipation and identify a correspondence to the contributions to the electrode ASR from the faradaic, electronic, and ionic transport processes. We find that, within the electrode, more power is dissipated in the faradaic process than in the electronic and ionic conduction processes combined, despite the observed linear polarization behavior. We examine the sensitivity of the ASR to the values of the model parameters. The greatest performance improvement is anticipated from increasing the volumetric exchange current density.« less

The role of electronic and ionic conductivities in the rate performance of tunnel structured manganese oxides in Li-ion batteries

DOE PAGES

Byles, B. W.; Palapati, N. K. R.; Subramanian, A.; ...

2016-04-29

Single nanowires of two manganese oxide polymorphs (α-MnO 2 and todorokite manganese oxide), which display a controlled size variation in terms of their square structural tunnels, were isolated onto nanofabricated platforms using dielectrophoresis. This platform allowed for the measurement of the electronic conductivity of these manganese oxides, which was found to be higher in α-MnO 2 as compared to that of the todorokite phase by a factor of similar to 46. Despite this observation of substantially higher electronic conductivity in α-MnO 2, the todorokite manganese oxide exhibited better electrochemical rate performance as a Li-ion battery cathode. The relationship between thismore » electrochemical performance, the electronic conductivities of the manganese oxides, and their reported ionic conductivities is discussed for the first time, clearly revealing that the rate performance of these materials is limited by their Li + diffusivity, and not by their electronic conductivity. This result reveals important new insights relevant for improving the power density of manganese oxides, which have shown promise as a low-cost, abundant, and safe alternative for next-generation cathode materials. Moreover, the presented experimental approach is suitable for assessing a broader family of one-dimensional electrode active materials (in terms of their electronic and ionic conductivities) for both Li-ion batteries and for electrochemical systems utilizing charge-carrying ions beyond Li +.« less

Electron Mobility in γ -Al2O3/SrTiO3

NASA Astrophysics Data System (ADS)

Christensen, D. V.; Frenkel, Y.; Schütz, P.; Trier, F.; Wissberg, S.; Claessen, R.; Kalisky, B.; Smith, A.; Chen, Y. Z.; Pryds, N.

2018-05-01

One of the key issues in engineering oxide interfaces for electronic devices is achieving high electron mobility. SrTiO3 -based interfaces with high electron mobility have gained a lot of interest due to the possibility of combining quantum phenomena with the many functionalities exhibited by SrTiO3 . To date, the highest electron mobility (140 000 cm2/V s at 2 K) is obtained by interfacing perovskite SrTiO3 with spinel γ -Al2O3 . The origin of the high mobility, however, remains poorly understood. Here, we investigate the scattering mechanisms limiting the mobility in γ -Al2O3/SrTiO3 at temperatures between 2 and 300 K and over a wide range of sheet carrier densities. For T >150 K , we find that the mobility is limited by longitudinal optical phonon scattering. For large sheet carrier densities (>8 ×1013 cm-2 ), the screened electron-phonon coupling leads to room-temperature mobilities up to μ ˜12 cm2/V s . For 5 K

GW electronic Correlations in Quantum Transport : Renormalization and finite lifetime effects on real systems

NASA Astrophysics Data System (ADS)

Darancet, Pierre; Ferretti, Andrea; Mayou, Didier; Olevano, Valerio

2007-03-01

We present an ab initio approach to electronic transport in nanoscale systems which includes electronic correlations through the GW approximation. With respect to Landauer approaches based on density-functional theory (DFT), we introduce a physical quasiparticle electronic-structure into a non-equilibrium Green's function theory framework. We use an equilibrium non-selfconsistent G^0W^0 self-energy considering both full non-hermiticity and dynamical effects. The method is applied to a real system, a gold mono-atomic chain. With respect to DFT results, the conductance profile is modified and reduced by to the introduction of diffusion and loss-of-coherence effects. The linear response conductance characteristic appear to be in agreement with experimental results.

Field electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Srinivasu, K.; Yeh, C. J.; Thomas, J. P.; Drijkoningen, S.; Pobedinskas, P.; Sundaravel, B.; Leou, K. C.; Leung, K. T.; Van Bael, M. K.; Schreck, M.; Lin, I. N.; Haenen, K.

2017-06-01

The field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/μm, a high current density of 25.5 mA/cm2 (at 23.2 V/μm), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films.

Plasmonic resonances of nanoparticles from large-scale quantum mechanical simulations

NASA Astrophysics Data System (ADS)

Zhang, Xu; Xiang, Hongping; Zhang, Mingliang; Lu, Gang

2017-09-01

Plasmonic resonance of metallic nanoparticles results from coherent motion of its conduction electrons, driven by incident light. For the nanoparticles less than 10 nm in diameter, localized surface plasmonic resonances become sensitive to the quantum nature of the conduction electrons. Unfortunately, quantum mechanical simulations based on time-dependent Kohn-Sham density functional theory are computationally too expensive to tackle metal particles larger than 2 nm. Herein, we introduce the recently developed time-dependent orbital-free density functional theory (TD-OFDFT) approach which enables large-scale quantum mechanical simulations of plasmonic responses of metallic nanostructures. Using TD-OFDFT, we have performed quantum mechanical simulations to understand size-dependent plasmonic response of Na nanoparticles and plasmonic responses in Na nanoparticle dimers and trimers. An outlook of future development of the TD-OFDFT method is also presented.

Validation of non-local electron heat conduction model for radiation MHD simulation in magnetized laser plasma

NASA Astrophysics Data System (ADS)

Nagatomo, Hideo; Matsuo, Kazuki; Nicolai, Pilippe; Asahina, Takashi; Fujioka, Shinsuke

2017-10-01

In laser plasma physics, application of an external magnetic field is an attractive method for various research of high energy density physics including fast ignition. Meanwhile, in the high intense laser plasma the behavior of hot electron cannot be ignored. In the radiation hydrodynamic simulation, a classical electron conduction model, Spitzer-Harm model has been used in general. However the model has its limit, and modification of the model is necessary if it is used beyond the application limit. Modified SNB model, which considering the influence of magnetic field is applied to 2-D radiation magnetohydrodynamic code PINOCO. Some experiments related the non-local model are carried out at GXII, Osaka University. In this presentation, these experimental results are shown briefly. And comparison between simulation results considering the non-local electron heat conduction mode are discussed. This study was supported JSPS KAKENHI Grant No. 17K05728.

Spin-dependent electrical conduction in a pentacene Schottky diode explored by electrically detected magnetic resonance

NASA Astrophysics Data System (ADS)

Fukuda, Kunito; Asakawa, Naoki

2017-02-01

Reported is the observation of dark spin-dependent electrical conduction in a Schottky barrier diode with pentacene (PSBD) using electrically detected magnetic resonance at room temperature. It is suggested that spin-dependent conduction exists in pentacene thin films, which is explored by examining the anisotropic linewidth of the EDMR signal and current density-voltage (J-V) measurements. The EDMR spectrum can be decomposed to Gaussian and Lorentzian components. The dependency of the two signals on the applied voltage was consistent with the current density-voltage (J-V) of the PSBD rather than that of the electron-only device of Al/pentacene/Al, indicating that the spin-dependent conduction is due to bipolaron formation associated with hole polaronic hopping processes. The applied-voltage dependence of the ratio of intensity of the Gaussian line to the Lorentzian may infer that increasing current density should make conducting paths more dispersive, thereby resulting in an increased fraction of the Gaussian line due to the higher dispersive g-factor.

Unidirectional spin density wave state in metallic (Sr 1-xLax) 2IrO 4

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiang; Schmehr, Julian L.; Islam, Zahirul

Materials that exhibit both strong spin–orbit coupling and electron correlation effects are predicted to host numerous new electronic states. One prominent example is the J eff = 1/2 Mott state in Sr 2IrO 4, where introducing carriers is predicted to manifest high temperature superconductivity analogous to the S=1/2 Mott state of La 2CuO 4. While bulk super- conductivity currently remains elusive, anomalous quasiparticle behaviors paralleling those in the cuprates such as pseudogap formation and the formation of a d-wave gap are observed upon electron-doping Sr 2IrO 4. Here we establish a magnetic parallel between electron-doped Sr 2IrO 4 and hole-dopedmore » La 2CuO 4 by unveiling a spin density wave state in electron-doped Sr 2IrO 4. Our magnetic resonant X-ray scattering data reveal the presence of an incom- mensurate magnetic state reminiscent of the diagonal spin density wave state observed in the monolayer cuprate (La 1-xSr x) 2CuO 4. This link supports the conjecture that the quenched Mott phases in electron-doped Sr 2IrO 4 and hole-doped La 2CuO 4 support common competing electronic phases.« less

Warm Dense Matter Demonstrating Non-Drude Conductivity from Observations of Nonlinear Plasmon Damping

NASA Astrophysics Data System (ADS)

Witte, Bastian B. L.

2017-10-01

The thermal and electrical conductivity, equation of state and the spectral opacity in warm dense matter (WDM) are essential properties for modeling, e.g., fusion experiments or the magnetic field generation in planets. In the last decade it has been shown that x-ray Thomson scattering (XRTS) is an effective tool to determine plasma parameters like temperature and density in the WDM regime. Recently, the electrical conductivity was extracted from XRTS experiments for the first time. The spectrally resolved scattering data of aluminum, isochorically heated by the Linac Coherent Light Source (LCLS), show strong dependence on electron correlations. Therefore, the damping of plasmons, the collective electron oscillations, has to be treated beyond perturbation theory. We present results for the dynamic transport properties in warm dense aluminum using density-functional-theory molecular dynamics (DFT-MD) simulations. The choice of the exchange-correlation (XC) functional, describing the interactions in the electronic subsystem, has significant impact on the ionization energy of bound electrons and the dynamic dielectric function. Our newly developed method for the calculation of XRTS signals including plasmon and bound-free transitions is based on transition matrix elements together with ionic contributions using uniquely DFT-MD simulations. The results show excellent agreement with the LCLS data if hybrid functionals are applied. The experimental finding of nonlinear plasmon damping is caused by the non-Drude conductivity in warm dense aluminum. Here, we show further validation by comparing with x-ray absorption data. These findings enable new insights into the impact of XC functionals on calculated properties of WDM and allow detailed predictions for future experiments at the unprecedented densities on the NIF. This work was performed in collaboration with P. Sperling, S.H. Glenzer, R. Redmer and was supported by the DFG via the Collaborative Research Center SFB 652 and the DOE Office of Science, Fusion Energy Science under Grant No. FWP 100182.

A short note on the assimilation of collocated and concurrent GPS and ionosonde data into the Electron Density Assimilative Model

NASA Astrophysics Data System (ADS)

Angling, M. J.; Jackson-Booth, N. K.

2011-12-01

The Electron Density Assimilative Model (EDAM) has been developed to provide real-time characterizations of the ionosphere by assimilating diverse data sets into a background model. Techniques have been developed to assimilate virtual height ionogram traces rather than relying on true height inversions. A test assimilation has been conducted using both GPS and ionosonde data as input. Postassimilation analysis shows that foF2 residuals can be degraded when only GPS data are assimilated. It has also been demonstrated that by using both data types it is possible to have low total electron content and foF2 residuals and that this is achieved by modifying the ionospheric slab thickness.

On the Relation Between Soft Electron Precipitations in the Cusp Region and Solar Wind Coupling Functions

NASA Astrophysics Data System (ADS)

Dang, Tong; Zhang, Binzheng; Wiltberge, Michael; Wang, Wenbin; Varney, Roger; Dou, Xiankang; Wan, Weixing; Lei, Jiuhou

2018-01-01

In this study, the correlations between the fluxes of precipitating soft electrons in the cusp region and solar wind coupling functions are investigated utilizing the Lyon-Fedder-Mobarry global magnetosphere model simulations. We conduct two simulation runs during periods from 20 March 2008 to 16 April 2008 and from 15 to 24 December 2014, which are referred as "Equinox Case" and "Solstice Case," respectively. The simulation results of Equinox Case show that the plasma number density in the high-latitude cusp region scales well with the solar wind number density (ncusp/nsw=0.78), which agrees well with the statistical results from the Polar spacecraft measurements. For the Solstice Case, the plasma number density of high-latitude cusp in both hemispheres increases approximately linearly with upstream solar wind number density with prominent hemispheric asymmetry. Due to the dipole tilt effect, the average number density ratio ncusp/nsw in the Southern (summer) Hemisphere is nearly 3 times that in the Northern (winter) Hemisphere. In addition to the solar wind number density, 20 solar wind coupling functions are tested for the linear correlation with the fluxes of precipitating cusp soft electrons. The statistical results indicate that the solar wind dynamic pressure p exhibits the highest linear correlation with the cusp electron fluxes for both equinox and solstice conditions, with correlation coefficients greater than 0.75. The linear regression relations for equinox and solstice cases may provide an empirical calculation for the fluxes of cusp soft electron precipitation based on the upstream solar wind driving conditions.

High-Energy Emissions Induced by Air Density Fluctuations of Discharges

NASA Astrophysics Data System (ADS)

Köhn, C.; Chanrion, O.; Neubert, T.

2018-05-01

Bursts of X-rays and γ-rays are observed from lightning and laboratory sparks. They are bremsstrahlung from energetic electrons interacting with neutral air molecules, but it is still unclear how the electrons achieve the required energies. It has been proposed that the enhanced electric field of streamers, found in the corona of leader tips, may account for the acceleration; however, their efficiency is questioned because of the relatively low production rate found in simulations. Here we emphasize that streamers usually are simulated with the assumption of homogeneous gas, which may not be the case on the small temporal and spatial scales of discharges. Since the streamer properties strongly depend on the reduced electric field E/n, where n is the neutral number density, fluctuations may potentially have a significant effect. To explore what might be expected if the assumption of homogeneity is relaxed, we conducted simple numerical experiments based on simulations of streamers in a neutral gas with a radial gradient in the neutral density, assumed to be created, for instance, by a previous spark. We also studied the effects of background electron density from previous discharges. We find that X-radiation and γ-radiation are enhanced when the on-axis air density is reduced by more than ˜25%. Pre-ionization tends to reduce the streamer field and thereby the production rate of high-energy electrons; however, the reduction is modest. The simulations suggest that fluctuations in the neutral densities, on the temporal and spacial scales of streamers, may be important for electron acceleration and bremsstrahlung radiation.

Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Niikura, Chisato; Masuda, Atsushi; Matsumura, Hideki

1999-07-01

Polycrystalline Si (poly-Si) films with high crystalline fraction and low dangling-bond density were prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical conduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline and amorphous phases in poly-Si films using anisotropic electrical conduction was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density for Cat-CVD poly-Si films was achieved using the condition to make the quality of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications.

Electronic transport coefficients from ab initio simulations and application to dense liquid hydrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holst, Bastian; French, Martin; Redmer, Ronald

2011-06-15

Using Kubo's linear response theory, we derive expressions for the frequency-dependent electrical conductivity (Kubo-Greenwood formula), thermopower, and thermal conductivity in a strongly correlated electron system. These are evaluated within ab initio molecular dynamics simulations in order to study the thermoelectric transport coefficients in dense liquid hydrogen, especially near the nonmetal-to-metal transition region. We also observe significant deviations from the widely used Wiedemann-Franz law, which is strictly valid only for degenerate systems, and give an estimate for its valid scope of application toward lower densities.

Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors.

PubMed

Qian, Qingkai; Li, Guanhong; Jin, Yuanhao; Liu, Junku; Zou, Yuan; Jiang, Kaili; Fan, Shoushan; Li, Qunqing

2014-09-23

The often observed p-type conduction of single carbon nanotube field-effect transistors is usually attributed to the Schottky barriers at the metal contacts induced by the work function differences or by the doping effect of the oxygen adsorption when carbon nanotubes are exposed to air, which cause the asymmetry between electron and hole injections. However, for carbon nanotube thin-film transistors, our contrast experiments between oxygen doping and electrostatic doping demonstrate that the doping-generated transport barriers do not introduce any observable suppression of electron conduction, which is further evidenced by the perfect linear behavior of transfer characteristics with the channel length scaling. On the basis of the above observation, we conclude that the environmental adsorbates work by more than simply shifting the Fermi level of the CNTs; more importantly, these adsorbates cause a poor gate modulation efficiency of electron conduction due to the relatively large trap state density near the conduction band edge of the carbon nanotubes, for which we further propose quantitatively that the adsorbed oxygen-water redox couple is responsible.

Investigation and Manipulation of Different Analog Behaviors of Memristor as Electronic Synapse for Neuromorphic Applications.

PubMed

Wang, Changhong; He, Wei; Tong, Yi; Zhao, Rong

2016-03-14

Low-power and high-density electronic synapse is an important building block of brain-inspired systems. The recent advancement in memristor has provided an opportunity to advance electronic synapse design. However, a guideline on designing and manipulating the memristor's analog behaviors is still lacking. In this work, we reveal that compliance current (Icomp) of electroforming process played an important role in realizing a stable analog behavior, which is attributed to the generation of conical-type conductive filament. A proper Icomp could result in a large conductance window, good stability, and low voltage analog switching. We further reveal that different pulse conditions can lead to three analog behaviors, where the conductance changes in monotonic increase, plateau after initial jump, and impulse-like shape, respectively. These behaviors could benefit the design of electronic synapse with enriched learning capabilities. This work will provide a useful guideline for designing and manipulating memristor as electronic synapses for brain-inspired systems.

Investigation and Manipulation of Different Analog Behaviors of Memristor as Electronic Synapse for Neuromorphic Applications

NASA Astrophysics Data System (ADS)

Wang, Changhong; He, Wei; Tong, Yi; Zhao, Rong

2016-03-01

Low-power and high-density electronic synapse is an important building block of brain-inspired systems. The recent advancement in memristor has provided an opportunity to advance electronic synapse design. However, a guideline on designing and manipulating the memristor’s analog behaviors is still lacking. In this work, we reveal that compliance current (Icomp) of electroforming process played an important role in realizing a stable analog behavior, which is attributed to the generation of conical-type conductive filament. A proper Icomp could result in a large conductance window, good stability, and low voltage analog switching. We further reveal that different pulse conditions can lead to three analog behaviors, where the conductance changes in monotonic increase, plateau after initial jump, and impulse-like shape, respectively. These behaviors could benefit the design of electronic synapse with enriched learning capabilities. This work will provide a useful guideline for designing and manipulating memristor as electronic synapses for brain-inspired systems.

The coronal electron density distribution determined from dual-frequency ranging measurements during the 1991 solar conjunction of the Ulysses spacecraft

NASA Technical Reports Server (NTRS)

Bird, M. K.; Volland, H.; Paetzold, M.; Edenhofer, P.; Asmar, S. W.; Brenkle, J. P.

1994-01-01

Dual-frequency ranging and Doppler measurements were conducted in support of the Ulysses Solar Corona Experiment (SCE) at and around the spacecraft's first solar conjunction in 1991 August. The differential group delay time between range codes on the two downlink carrier signals at the wavelengths 13.1 and 3.6 cm, a direct measure of the total electron content between spacecraft and ground station, was used to derive the electron density distribution in the solar corona. Linear power-law representations of the coronal electron density were derived for the range of solar distances from 4 solar radii to 40 solar radii on both sides of the Sun. The corona was found to be very nearly symmetric; the radial falloff exponent being 2.54 +/- 0.05 for occultation ingress (east solar limb) and 2.42 +/- 0.05 for egress (west limb), respectively. The departure of these exponents from the inverse equare relation implies that significant solar wind acceleration is occurring within the radial range of the observations. The electron density level was found to be considerably lower than that observed during the 1988 December solar occultation of Voyager 2. Although the smoothed sunspot number R(sub z) (a standard indicator of solar activity) was almost the same in 1988 December and 1991 August, the mean electron density at 20 solar radii was found to be 1.7 +/- 0.1 x 10(exp 3)/cu cm during the Ulysses conjunction, a decline by almost a factor of 4 from the value obtained during the Voyager conjunction.

Antimonene: Experiments and theory of surface conductivity

NASA Astrophysics Data System (ADS)

Palacios, Juan Jose; Ares, Pablo; Pakdel, Sahar; Paz, Wendel; Zamora, Felix; Gomez-Herrero, Julio

Very recently antimony has been demonstrated to be amenable to standard exfoliation procedures opening the possibility of studying the electronic properties of isolated few-layers flakes of this material, a.k.a. antimonene. Antimony is a topological semimetal, meaning that its electronic structure presents spin-split helical states (or Dirac cones) on the surface, but it is still trivially metallic in bulk. Antimonene, on the other hand, may present a much reduced electronic bulk contribution for a small number of layers. A novel technique to make electrical contacts on the surface of individual thin flakes (5-10 monolayers) has allowed us to measure the (surface) conductivity of these in ambient conditions. Our measurements show a high conductivity in the range of 1 - 2e2 / h , which we attribute to the surface Dirac electrons. We have also carried out theoretical work to address the origin of this value, in particular, the importance of scattering between the Dirac electrons and the bulk bands. Our calculations are based on density functional theory for the electronic structure and Kubo formalism for the conductivity, the latter considering random disorder and the presence of water. Ministerio de Economia y Competitividad, Grant FIS2016-80434-P.

Quasi 2D Ultrahigh Carrier Density in a Complex Oxide Broken Gap Heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Peng; Droubay, Timothy C.; Jeong, Jong S.

2016-01-21

Two-dimensional (2D) ultra-high carrier densities at complex oxide interfaces are of considerable current research interest for novel plasmonic and high charge-gain devices. However, the highest 2D electron density obtained in oxide heterostructures is thus far limited to 3×1014 cm-2 (½ electron/unit cell/interface) at GdTiO3/SrTiO3 interfaces, and is typically an order of magnitude lower at LaAlO3/SrTiO3 interfaces. Here we show that carrier densities much higher than 3×1014 cm-2 can be achieved via band engineering. Transport measurements for 3 nm SrTiO3/t u.c. NdTiO3/3 nm SrTiO3/LSAT (001) show that charge transfer significantly in excess of the value expected from the polar discontinuity modelmore » occurs for higher t values. The carrier density remains unchanged, and equivalent to ½ electron/unit cell/interface for t < 6 unit cells. However, above a critical NdTiO3 thickness of 6 u.c., electrons from the valence band of NdTiO3 spill over into the SrTiO3 conduction band as a natural consequence of the band alignment. An atomistic model consistent with first-principle calculations and experimental results is proposed for the charge transfer mechanisms. These results may provide an exceptional route to the realization of the room-temperature oxide electronics.« less

Transient Electromagnetic Wave Propagation in a Plasma Waveguide

DTIC Science & Technology

2011-10-24

dielectric. The calculation of the propagation characteristics is based upon tangential continuity of the electric and magnetic field components...filament as a time-dependent resistance , we have determined the electron density, the kinetic parameters for electron attachment and recombination, and...wall conductivity simplifies the imposition of the boundary conditions. The tangential component of the electric field and the normal component of the

Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rout, G. C., E-mail: siva1987@iopb.res.in, E-mail: skp@iopb.res.in, E-mail: gcr@iopb.res.in; Sahu, Sivabrata; Panda, S. K.

2016-04-13

We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution ofmore » the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).« less

Application of a high-energy-density permanent magnet material in underwater systems

NASA Astrophysics Data System (ADS)

Cho, C. P.; Egan, C.; Krol, W. P.

1996-06-01

This paper addresses the application of high-energy-density permanent magnet (PM) technology to (1) the brushless, axial-field PM motor and (2) the integrated electric motor/pump system for under-water applications. Finite-element analysis and lumped parameter magnetic circuit analysis were used to calculate motor parameters and performance characteristics and to conduct tradeoff studies. Compact, efficient, reliable, and quiet underwater systems are attainable with the development of high-energy-density PM material, power electronic devices, and power integrated-circuit technology.

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

DOE PAGES

Chen, Zhuoyu; Yuan, Hongtao; Xie, Yanwu; ...

2016-09-08

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. Furthermore, in order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. By utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO 3/SrTiO 3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson–Schrödinger sub-bandmore » model. In particular, the large nonlinear dielectric response of SrTiO 3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. This study provides a broad framework for understanding various reported phenomena at the LaAlO 3/SrTiO 3 interface.« less

Quantum confinement effects on electronic photomobilities at nanostructured semiconductor surfaces: Si(111) without and with adsorbed Ag clusters

NASA Astrophysics Data System (ADS)

Hembree, Robert H.; Vazhappilly, Tijo; Micha, David A.

2017-12-01

The conductivity of holes and electrons photoexcited in Si slabs is affected by the slab thickness and by adsorbates. The mobilities of those charged carriers depend on how many layers compose the slab, and this has important scientific and technical consequences for the understanding of photovoltaic materials. A previously developed general computational procedure combining density matrix and electronic band structure treatments has been applied to extensive calculations of mobilities of photoexcited electrons and holes at Si(111) nanostructured surfaces with varying slab thickness and for varying photon energies, to investigate the expected change in mobility magnitudes as the slab thickness is increased. Results have been obtained with and without adsorbed silver clusters for comparison of their optical and photovoltaic properties. Band states were generated using a modified ab initio density functional treatment with the PBE exchange and correlation density functionals and with periodic boundary conditions for large atomic supercells. An energy gap correction was applied to the unoccupied orbital energies of each band structure by running more accurate HSE hybrid functional calculations for a Si(111) slab. Photoexcited state populations for slabs with 6, 8, 10, and 12 layers were generated using a steady state reduced density matrix including dissipative effects due to energy exchange with excitons and phonons in the medium. Mobilities have been calculated from the derivatives of voltage-driven electronic energies with respect to electronic momentum, for each energy band and for the average over bands. Results show two clear trends: (a) adding Ag increases the hole photomobilities and (b) decreasing the slab thickness increases hole photomobilities. The increased hole populations in 6- and 8-layer systems and the large increase in hole mobility for these thinner slabs can be interpreted as a quantum confinement effect of hole orbitals. As the slab thickness increases to ten and twelve layers, the effect of silver adsorbates decreases leading to smaller relative enhancements to the conduction electron and hole mobilities, but the addition of the silver nanoclusters still increases the absorbance of light and the mobility of holes compared to their mobilities in the pure Si slabs.

Materials, properties, and applications of nitrogen-doped organic semiconductors

NASA Astrophysics Data System (ADS)

Chan, Calvin Kar-Fai

As organic semiconducting materials draw increasing attention for many promising applications, including efficient organic light-emitting diodes (OLEDs), large-area organic photovoltaic (OPV) cells, and flexible organic thin-film transistors (OTFTs), chemical doping of organic materials is emerging as an important technique for overcoming performance deficiencies and material limitations of intrinsic organic films. Although p-doping has been amply demonstrated, molecular n-type doping has been difficult to study because of the inherent instability of easily oxidized n-dopants. In this work, the facile use of two low ionization energy (IE) small molecules that are suitable for n-doping a wide range of organic electronic materials is demonstrated. Cobaltocene (CoCp2) and its derivative, decamethylcobaltocene ( CoCp*2 ), were found to have fairly low IEs for organic compounds. Co-deposition of the n-dopants with different host molecules results in pronounced shifts of the Fermi-level towards unoccupied molecular states, indicating a significant increase in electron concentration. The Fermi-level shifts, measured with ultra-violet photoemission spectroscopy (UPS), are correlated with excess carrier densities using a model based on Fermi-Dirac (F-D) statistics and a Gaussian distributed density of states. The calculated electron densities suggest full dopant ionization at low concentrations, and diminished efficiency at high donor concentrations. The concentration of incorporated dopants is examined by chemical composition analysis of doped films using X-ray photoemission spectroscopy (XPS). Atomic concentration depth profiling determined by Rutherford backscattering (RBS) suggests that the incorporation of CoCp2 and CoCp*2 is well-controlled and the dopants are minimally diffusive. Organic films n-doped using CoCp2 and CoCp*2 show several orders of magnitude increase in current density resulting from both enhanced electron injection and increased electron conductivity in the bulk. Increases in the bulk conductivity suggest both improved electron mobility and higher electron concentrations. These findings are applied with previous work on p-doping to fabricate organic p-i-n homojunction devices that exhibit strong rectification and large built-in potentials. Heterojunction OPVs using undoped CuPc and n-doped C60 display significant increases in open-circuit voltage (Voc), short-circuit current (Isc), fill-factor (FF), and efficiency.

Silicon quantum dots embedded in a SiO2 matrix: From structural study to carrier transport properties

NASA Astrophysics Data System (ADS)

Garcia-Castello, Nuria; Illera, Sergio; Guerra, Roberto; Prades, Joan Daniel; Ossicini, Stefano; Cirera, Albert

2013-08-01

We study the details of electronic transport related to the atomistic structure of silicon quantum dots embedded in a silicon dioxide matrix using ab initio calculations of the density of states. Several structural and composition features of quantum dots (QDs), such as diameter and amorphization level, are studied and correlated with transport under transfer Hamiltonian formalism. The current is strongly dependent on the QD density of states and on the conduction gap, both dependent on the dot diameter. In particular, as size increases, the available states inside the QD increase, while the QD band gap decreases due to relaxation of quantum confinement. Both effects contribute to increasing the current with the dot size. Besides, valence band offset between the band edges of the QD and the silica, and conduction band offset in a minor grade, increases with the QD diameter up to the theoretical value corresponding to planar heterostructures, thus decreasing the tunneling transmission probability and hence the total current. We discuss the influence of these parameters on electron and hole transport, evidencing a correlation between the electron (hole) barrier value and the electron (hole) current, and obtaining a general enhancement of the electron (hole) transport for larger (smaller) QD. Finally, we show that crystalline and amorphous structures exhibit enhanced probability of hole and electron current, respectively.

The collisional drift mode in a partially ionized plasma. [in the F region

NASA Technical Reports Server (NTRS)

Hudson, M. K.; Kennel, C. F.

1974-01-01

The structure of the drift instability was examined in several density regimes. Let sub e be the total electron mean free path, k sub z the wave-vector component along the magnetic field, and the ratio of perpendicular ion diffusion to parallel electron streaming rates. At low densities (k sub z lambda 1) the drift mode is isothermal and should be treated kineticly. In the finite heat conduction regime square root of m/M k sub z Lambda sub 1) the drift instability threshold is reduced at low densities and increased at high densities as compared to the isothermal threshold. Finally, in the energy transfer limit (k sub z kambda sub e square root of m/M) the drift instability behaves adiabatically in a fully ionized plasma and isothermally in a partially ionized plasma for an ion-neutral to Coulomb collision frequency ratio.

Observations of non-linear plasmon damping in dense plasmas

NASA Astrophysics Data System (ADS)

Witte, B. B. L.; Sperling, P.; French, M.; Recoules, V.; Glenzer, S. H.; Redmer, R.

2018-05-01

We present simulations using finite-temperature density-functional-theory molecular-dynamics to calculate dynamic dielectric properties in warm dense aluminum. The comparison between exchange-correlation functionals in the Perdew, Burke, Ernzerhof approximation, Strongly Constrained and Appropriately Normed Semilocal Density Functional, and Heyd, Scuseria, Ernzerhof (HSE) approximation indicates evident differences in the electron transition energies, dc conductivity, and Lorenz number. The HSE calculations show excellent agreement with x-ray scattering data [Witte et al., Phys. Rev. Lett. 118, 225001 (2017)] as well as dc conductivity and absorption measurements. These findings demonstrate non-Drude behavior of the dynamic conductivity above the Cooper minimum that needs to be taken into account to determine optical properties in the warm dense matter regime.

Electronic and transport properties of a molecular junction with asymmetric contacts.

PubMed

Tsai, M-H; Lu, T-H

2010-02-10

Asymmetric molecular junctions have been shown experimentally to exhibit a dual-conductance transport property with a pulse-like current-voltage characteristic, by Reed and co-workers. Using a recently developed first-principles integrated piecewise thermal equilibrium current calculation method and a gold-benzene-1-olate-4-thiolate-gold model molecular junction, this unusual transport property has been reproduced. Analysis of the electrostatics and the electronic structure reveals that the high-current state results from subtle bias induced charge transfer at the electrode-molecule contacts that raises molecular orbital energies and enhances the current-contributing molecular density of states and the probabilities of resonance tunneling of conduction electrons from one electrode to another.

Conduction band edge effective mass of La-doped BaSnO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

James Allen, S., E-mail: allen@itst.ucsb.edu; Law, Ka-Ming; Raghavan, Santosh

2016-06-20

BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

On interaction of P-waves with one-dimensional photonic crystal consisting of weak conducting matter and transparent dielectric layers

NASA Astrophysics Data System (ADS)

Yushkanov, A. A.; Zverev, N. V.

2018-03-01

An influence of quantum and spatial dispersion properties of the non-degenerate electron plasma on the interaction of electromagnetic P-waves with one-dimensional photonic crystal consisting of conductor with low carrier electron density and transparent dielectric matter, is studied numerically. It is shown that at the frequencies of order of the plasma frequency and at small widths of the conducting and dielectric layers of the photonic crystal, optical coefficients in the quantum non-degenerate plasma approach differ from the coefficients in the classical electron gas approach. And also, at these frequencies one observes a temperature dependence of the optical coefficients.

Charge carrier transport and optical properties of SAM-induced conducting channel in organic semiconductors.

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly

2009-03-01

Certain types of self-assembled monolayers (SAM) grown directly at the surface of organic semiconductors can induce a high surface conductivity in these materials [1]. For example, the conductivity induced by perfluorinated alkyl silanes in organic molecular crystals approaches 10 to -5 Siemens per square. The observed large electronic effect opens new opportunities for nanoscale surface functionalization of organic semiconductors and provides experimental access to the regime of high carrier density. Here, we will discuss temperature variable measurements of SAM-induced conductivity in several types of organic semiconductors. [1]. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, ``Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers'', Nature Mat. 7, 84 (2008).

Metal sulfide electrodes and energy storage devices thereof

DOEpatents

Chiang, Yet-Ming; Woodford, William Henry; Li, Zheng; Carter, W. Craig

2017-02-28

The present invention generally relates to energy storage devices, and to metal sulfide energy storage devices in particular. Some aspects of the invention relate to energy storage devices comprising at least one flowable electrode, wherein the flowable electrode comprises an electroactive metal sulfide material suspended and/or dissolved in a carrier fluid. In some embodiments, the flowable electrode further comprises a plurality of electronically conductive particles suspended and/or dissolved in the carrier fluid, wherein the electronically conductive particles form a percolating conductive network. An energy storage device comprising a flowable electrode comprising a metal sulfide electroactive material and a percolating conductive network may advantageously exhibit, upon reversible cycling, higher energy densities and specific capacities than conventional energy storage devices.

Quantum ballistic transport by interacting two-electron states in quasi-one-dimensional channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Danhong; Center for High Technology Materials, University of New Mexico, 1313 Goddard St SE, Albuquerque, New Mexico 87106; Gumbs, Godfrey

2015-11-15

For quantum ballistic transport of electrons through a short conduction channel, the role of Coulomb interaction may significantly modify the energy levels of two-electron states at low temperatures as the channel becomes wide. In this regime, the Coulomb effect on the two-electron states is calculated and found to lead to four split energy levels, including two anticrossing-level and two crossing-level states. Moreover, due to the interplay of anticrossing and crossing effects, our calculations reveal that the ground two-electron state will switch from one anticrossing state (strong confinement) to a crossing state (intermediate confinement) as the channel width gradually increases andmore » then back to the original anticrossing state (weak confinement) as the channel width becomes larger than a threshold value. This switching behavior leaves a footprint in the ballistic conductance as well as in the diffusion thermoelectric power of electrons. Such a switching is related to the triple spin degeneracy as well as to the Coulomb repulsion in the central region of the channel, which separates two electrons away and pushes them to different channel edges. The conductance reoccurrence region expands from the weak to the intermediate confinement regime with increasing electron density.« less

Time-resolved electronic and optical properties of a thiolate-protected Au38 nanocluster

NASA Astrophysics Data System (ADS)

Meng, Qingguo; May, Stanley P.; Berry, Mary T.; Kilin, Dmitri S.

2015-02-01

Density functional theory and density matrix theory are employed to investigate the time-dependent optical and electronic properties of an Au14 nanocluster protected by six cyclic thiolate ligands, Au4(SCH3)4. The Au14[Au4(SCH3)4]6 nanocluster, i.e. Au38(SCH3)24, is equivalent to a truncated-octahedral face-centred cubic Au38 core coated by a monolayer of 24 methylthiol molecules. The electronic and optical properties, such as density of states, linear absorption spectra, nonradiative nonadiabatic dissipative electronic dynamics and radiative emission spectra were calculated and compared for the core Au14 and thiolate-protected Au38(SCH3)24 nanocluster. The main observation from computed photoluminescence for both models is a mechanism of radiative emission. Specifically, a strong contribution to light emission intensity originates from intraband transitions inside the conduction band (CB) in addition to interband LUMO → HOMO transition (HOMO: highest occupied molecular orbital and LUMO: lowest unoccupied molecular orbital). Such comparison clarifies the contributions from Au core and methylthiol ligands to the electronic and optical properties of the Au38(SCH3)24 nanocluster.

Plasma characteristics of argon glow discharge produced by AC power supply operating at low frequencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kongpiboolkid, Watcharapon; Mongkolnavin, Rattachat; Plasma Technology and Nuclear Fusion Research Unit, Chulalongkorn University, Bangkok

2015-04-24

Non-thermal properties of Argon glow discharge operating with various operating pressures were measured and presented in this work. The Argon plasma is produced by a parallel conducting electrodes coupling with a high voltage AC power supply. The power supply can generate high AC voltage at various frequencies. The frequencies for the operation are in the range of a few kHz. The system is capable of generating electric field between the two metal electrodes discharge system. The characteristics of plasma produced were measured by optical emission spectroscopy (OES) technique where electron temperature (T{sub e}) and electron number density (n{sub e}) canmore » be determined by line intensity ratio method. The value of electron number density was then determined from the Saha-Eggert equation. Our results show that the electron number density of the discharge obtained is of the order of 10{sup −17} − 10{sup −18} m{sup −3} where the electron temperature is between 1.00−2.00 eV for various operating frequencies used which are in good agreement with similar results published earlier.« less

Disorder and defects are not intrinsic to boron carbide

NASA Astrophysics Data System (ADS)

Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

2016-01-01

A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

Correlating electronic transport to atomic structures in self-assembled quantum wires.

PubMed

Qin, Shengyong; Kim, Tae-Hwan; Zhang, Yanning; Ouyang, Wenjie; Weitering, Hanno H; Shih, Chih-Kang; Baddorf, Arthur P; Wu, Ruqian; Li, An-Ping

2012-02-08

Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all quantum architectures. The electronic conductance in quantum wires, however, is often dictated by structural instabilities and electron localization at the atomic scale. Here we report on the evolutions of electronic transport as a function of temperature and interwire coupling as the quantum wires of GdSi(2) are self-assembled on Si(100) wire-by-wire. The correlation between structure, electronic properties, and electronic transport are examined by combining nanotransport measurements, scanning tunneling microscopy, and density functional theory calculations. A metal-insulator transition is revealed in isolated nanowires, while a robust metallic state is obtained in wire bundles at low temperature. The atomic defects lead to electron localizations in isolated nanowire, and interwire coupling stabilizes the structure and promotes the metallic states in wire bundles. This illustrates how the conductance nature of a one-dimensional system can be dramatically modified by the environmental change on the atomic scale. © 2012 American Chemical Society

Surface State Density Determines the Energy Level Alignment at Hybrid Perovskite/Electron Acceptors Interfaces.

PubMed

Zu, Fengshuo; Amsalem, Patrick; Ralaiarisoa, Maryline; Schultz, Thorsten; Schlesinger, Raphael; Koch, Norbert

2017-11-29

Substantial variations in the electronic structure and thus possibly conflicting energetics at interfaces between hybrid perovskites and charge transport layers in solar cells have been reported by the research community. In an attempt to unravel the origin of these variations and enable reliable device design, we demonstrate that donor-like surface states stemming from reduced lead (Pb 0 ) directly impact the energy level alignment at perovskite (CH 3 NH 3 PbI 3-x Cl x ) and molecular electron acceptor layer interfaces using photoelectron spectroscopy. When forming the interfaces, it is found that electron transfer from surface states to acceptor molecules occurs, leading to a strong decrease in the density of ionized surface states. As a consequence, for perovskite samples with low surface state density, the initial band bending at the pristine perovskite surface can be flattened upon interface formation. In contrast, for perovskites with a high surface state density, the Fermi level is strongly pinned at the conduction band edge, and only minor changes in surface band bending are observed upon acceptor deposition. Consequently, depending on the initial perovskite surface state density, very different interface energy level alignment situations (variations over 0.5 eV) are demonstrated and rationalized. Our findings help explain the rather dissimilar reported energy levels at interfaces with perovskites, refining our understanding of the operating principles in devices comprising this material.

Understanding the impact of insulating and conducting endplate boundary conditions on turbulence in CSDX through nonlocal simulations

DOE PAGES

Vaezi, P.; Holland, C.; Thakur, S. C.; ...

2017-04-01

The Controlled Shear Decorrelation Experiment (CSDX) linear plasma device provides a unique platform for investigating the underlying physics of self-regulating drift-wave turbulence/zonal flow dynamics. A minimal model of 3D drift-reduced nonlocal cold ion fluid equations which evolves density, vorticity, and electron temperature fluctuations, with proper sheath boundary conditions, is used to simulate dynamics of the turbulence in CSDX and its response to changes in parallel boundary conditions. These simulations are then carried out using the BOUndary Turbulence (BOUT++) framework and use equilibrium electron density and temperature profiles taken from experimental measurements. The results show that density gradient-driven drift-waves are themore » dominant instability in CSDX. However, the choice of insulating or conducting endplate boundary conditions affects the linear growth rates and energy balance of the system due to the absence or addition of Kelvin-Helmholtz modes generated by the sheath-driven equilibrium E × B shear and sheath-driven temperature gradient instability. Moreover, nonlinear simulation results show that the boundary conditions impact the turbulence structure and zonal flow formation, resulting in less broadband (more quasi-coherent) turbulence and weaker zonal flow in conducting boundary condition case. These results are qualitatively consistent with earlier experimental observations.« less

The electronic structure of lithium metagallate.

PubMed

Johnson, N W; McLeod, J A; Moewes, A

2011-11-09

Herein we present a study of the electronic structure of lithium metagallate (LiGaO(2)), a material of interest in the field of optoelectronics. We use soft x-ray spectroscopy to probe the electronic structure of both the valence and conduction bands and compare our measurements to ab initio density functional theory calculations. We use several different exchange-correlation functionals, but find that no single theoretical approach used herein accurately quantifies both the band gap and the Ga 3d(10) states in LiGaO(2). We derive a band gap of 5.6 eV, and characterize electron hybridization in both the valence and conduction bands. Our study of the x-ray spectra may prove useful in analysing spectra from more complicated LiGaO(2) heterostructures. © 2011 IOP Publishing Ltd

Room temperature stable single molecule rectifiers with graphite electrodes

NASA Astrophysics Data System (ADS)

Rungger, Ivan; Kaliginedi, V.; Droghetti, A.; Ozawa, H.; Kuzume, A.; Haga, M.; Broekmann, P.; Rudnev, A. V.

In this combined theoretical and experimental study we present new molecular electronics device characteristics of unprecedented stability at room temperature by using electrodes based on highly oriented pyrolytic graphite with covalently attached molecules. To this aim, we explore the effect of the anchoring group chemistry on the charge transport properties of graphite/molecule contacts by means of the scanning tunneling microscopy break-junction technique and ab initio simulations. The theoretical approach to evaluate the conductance is based on density functional theory calculations combined with the non-equilibrium Greens function technique, as implemented in the Smeagol electron transport code. We also demonstrate a strong bias dependence and rectification of the single molecule conductance induced by the anchoring chemistry in combination with the very low density of states of graphite around the Fermi energy. We show that the direction of tunneling current rectification can be tuned by anchoring group chemistry.

Influence of the Level of Protonation on the Geometry and the Electronic Structure of Emeraldine Oligomers

NASA Astrophysics Data System (ADS)

Petrova, Jasmina; Romanova, Julia; Madjarova, Galia; Ivanova, Anela; Tadjer, Alia; Gospodinova, Natalia

A number of studies prove the existence of magnetically active states in polyaniline and claim polaronic nature of conductivity, but the molecular structure of polarons and bipolarons with account of the solvent effect has not been exhausted. Alongside with conductivity, the optical and magnetic properties of the polymer related to its practical application could be rationalized by the elucidation of this problem. The purpose of this chapter is the assessment of the degree of protonation on the spatial and electronic structure of hydrated polyaniline oligomers. Neutral and protonated emeraldine octamers are modeled to this end. UHF, UBLYP, and UB3LYP with 6-31G* basis set were employed for optimization of the geometry in aqueous medium (PCM). Various structural parameters: bond lengths, valence, and torsion angles, were analyzed and compared. The distribution of Mulliken and NBO charge density and Mulliken atomic spin density was discussed.

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, J.-S.; Tyryshkin, A. M.; Lyon, S. A.

2017-03-01

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO2 interface. Here, we show that a forming gas anneal is effective at removing shallow defects (≤4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors. One set was irradiated with an electron-beam (10 keV, 40 μC/cm2) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14 000 cm2/Vs) to within a factor of two of the unexposed sample's mobility (23 000 cm2/Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T = 0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities.

Improving high-altitude emp modeling capabilities by using a non-equilibrium electron swarm model to monitor conduction electron evolution

NASA Astrophysics Data System (ADS)

Pusateri, Elise Noel

An Electromagnetic Pulse (EMP) can severely disrupt the use of electronic devices in its path causing a significant amount of infrastructural damage. EMP can also cause breakdown of the surrounding atmosphere during lightning discharges. This makes modeling EMP phenomenon an important research effort in many military and atmospheric physics applications. EMP events include high-energy Compton electrons or photoelectrons that ionize air and produce low energy conduction electrons. A sufficient number of conduction electrons will damp or alter the EMP through conduction current. Therefore, it is important to understand how conduction electrons interact with air in order to accurately predict the EMP evolution and propagation in the air. It is common for EMP simulation codes to use an equilibrium ohmic model for computing the conduction current. Equilibrium ohmic models assume the conduction electrons are always in equilibrium with the local instantaneous electric field, i.e. for a specific EMP electric field, the conduction electrons instantaneously reach steady state without a transient process. An equilibrium model will work well if the electrons have time to reach their equilibrium distribution with respect to the rise time or duration of the EMP. If the time to reach equilibrium is comparable or longer than the rise time or duration of the EMP then the equilibrium model would not accurately predict the conduction current necessary for the EMP simulation. This is because transport coefficients used in the conduction current calculation will be found based on equilibrium reactions rates which may differ significantly from their non-equilibrium values. We see this deficiency in Los Alamos National Laboratory's EMP code, CHAP-LA (Compton High Altitude Pulse-Los Alamos), when modeling certain EMP scenarios at high altitudes, such as upward EMP, where the ionization rate by secondary electrons is over predicted by the equilibrium model, causing the EMP to short abruptly. The objective of the PhD research is to mitigate this effect by integrating a conduction electron model into CHAP-LA which can calculate the conduction current based on a non-equilibrium electron distribution. We propose to use an electron swarm model to monitor the time evolution of conduction electrons in the EMP environment which is characterized by electric field and pressure. Swarm theory uses various collision frequencies and reaction rates to study how the electron distribution and the resultant transport coefficients change with time, ultimately reaching an equilibrium distribution. Validation of the swarm model we develop is a necessary step for completion of the thesis work. After validation, the swarm model is integrated in the air chemistry model CHAP-LA employs for conduction electron simulations. We test high altitude EMP simulations with the swarm model option in the air chemistry model to show improvements in the computational capability of CHAP-LA. A swarm model has been developed that is based on a previous swarm model developed by Higgins, Longmire and O'Dell 1973, hereinafter HLO. The code used for the swarm model calculation solves a system of coupled differential equations for electric field, electron temperature, electron number density, and drift velocity. Important swarm parameters, including the momentum transfer collision frequency, energy transfer collision frequency, and ionization rate, are recalculated and compared to the previously reported empirical results given by HLO. These swarm parameters are found using BOLSIG+, a two term Boltzmann solver developed by Hagelaar and Pitchford 2005. BOLSIG+ utilizes updated electron scattering cross sections that are defined over an expanded energy range found in the atomic and molecular cross section database published by Phelps in the Phelps Database 2014 on the LXcat website created by Pancheshnyi et al. 2012. The swarm model is also updated from the original HLO model by including additional physical parameters such as the O2 electron attachment rate, recombination rate, and mutual neutralization rate. This necessitates tracking the positive and negative ion densities in the swarm model. Adding these parameters, especially electron attachment, is important at lower EMP altitudes where atmospheric density is high. We compare swarm model equilibrium temperatures and times using the HLO and BOLSIG+ coefficients for a uniform electric field of 1 StatV/cm for a range of atmospheric heights. This is done in order to test sensitivity to the swarm parameters used in the swarm model. It is shown that the equilibrium temperature and time are sensitive to the modifications in the collision frequency and ionization rate based on the updated electron interaction cross sections. We validate the swarm model by comparing ionization coefficients and equilibrium drift velocities to experimental results over a wide range of reduced electric field values. The final part of the PhD thesis work includes integrating the swarm model into CHAP-LA. We discuss the physics included in the CHAP-LA EMP model and demonstrate EMP damping behavior caused by the ohmic model at high altitudes. We report on numerical techniques for incorporation of the swarm model into CHAP-LA's Maxwell solver. This includes a discussion of integration techniques for Maxwell's equations in CHAP-LA using the swarm model calculated conduction current. We show improvements on EMP parameter calculations when modeling a high altitude, upward EMP scenario. This provides a novel computational capability that will have an important impact on the atmospheric and EMP research community.

One-Dimensional Hybrid Satellite Track Model for the Dynamics Explorer 2 (DE 2) Satellite

NASA Technical Reports Server (NTRS)

Deng, Wei; Killeen, T. L.; Burns, A. G.; Johnson, R. M.; Emery, B. A.; Roble, R. G.; Winningham, J. D.; Gary, J. B.

1995-01-01

A one-dimensional hybrid satellite track model has been developed to calculate the high-latitude thermospheric/ionospheric structure below the satellite altitude using Dynamics Explorer 2 (DE 2) satellite measurements and theory. This model is based on Emery et al. satellite track code but also includes elements of Roble et al. global mean thermosphere/ionosphere model. A number of parameterizations and data handling techniques are used to input satellite data from several DE 2 instruments into this model. Profiles of neutral atmospheric densities are determined from the MSIS-90 model and measured neutral temperatures. Measured electron precipitation spectra are used in an auroral model to calculate particle impact ionization rates below the satellite. These rates are combined with a solar ionization rate profile and used to solve the O(+) diffusion equation, with the measured electron density as an upper boundary condition. The calculated O(+) density distribution, as well as the ionization profiles, are then used in a photochemical equilibrium model to calculate the electron and molecular ion densities. The electron temperature is also calculated by solving the electron energy equation with an upper boundary condition determined by the DE 2 measurement. The model enables calculations of altitude profiles of conductivity and Joule beating rate along and below the satellite track. In a first application of the new model, a study is made of thermospheric and ionospheric structure below the DE 2 satellite for a single orbit which occurred on October 25, 1981. The field-aligned Poynting flux, which is independently obtained for this orbit, is compared with the model predictions of the height-integrated energy conversion rate. Good quantitative agreement between these two estimates has been reached. In addition, measurements taken at the incoherent scatter radar site at Chatanika (65.1 deg N, 147.4 deg W) during a DE 2 overflight are compared with the model calculations. A good agreement was found in lower thermospheric conductivities and Joule heating rate.

Electronic Structure Approach to Tunable Electronic Properties of Hybrid Organic-Inorganic Perovskites

NASA Astrophysics Data System (ADS)

Liu, Garnett; Huhn, William; Mitzi, David B.; Kanai, Yosuke; Blum, Volker

We present a study of the electronic structure of layered hybrid organic-inorganic perovskite (HOIP) materials using all-electron density-functional theory. Varying the nature of the organic and inorganic layers should enable systematically fine-tuning the carrier properties of each component. Using the HSE06 hybrid density functional including spin-orbit coupling (SOC), we validate the principle of tuning subsystem-specific parts of the electron band structures and densities of states in CH3NH3PbX3 (X=Cl, Br, I) compared to a modified organic component in layered (C6H5C2H4NH3) 2PbX4 (X=Cl, Br, I) and C20H22S4N2PbX4 (X=Cl, Br, I). We show that tunable shifts of electronic levels indeed arise by varying Cl, Br, I as the inorganic components, and CH3NH3+ , C6H5C2H4NH3+ , C20H22S4N22 + as the organic components. SOC is found to play an important role in splitting the conduction bands of the HOIP compounds investigated here. The frontier orbitals of the halide shift, increasing the gap, when Cl is substituted for Br and I.

Tunable Magneto-electric Subbands in Oxide Electron Waveguides

NASA Astrophysics Data System (ADS)

Cheng, Guanglei; Annadi, Anil; Lu, Shicheng; Lee, Hyungwoo; Lee, Jungwoo; Eom, Chang-Beom; Huang, Mengchen; Irvin, Patrick; Levy, Jeremy

Strontium titanate-based complex-oxide interfaces hold great promise for exploring new correlated electron physics and applications in quantum technologies. Previous reports show electron mobility can be greatly enhanced in 1D, while the 2D interface can contain 1D channels due to the presence of ferroelastic domains. In addition, carrier density measurements at the 2D interface by Shubnikov-de Haas (SdH) oscillations and Hall effect reveal a large discrepancy. Here we fabricate quasi-1D electron waveguides at the LaAlO3/SrTiO3 (LAO/STO) interface to locally probe the interface. The conductance of the waveguides is fully quantized, and the corresponding magneto-electric subbands can be depopulated by increasing the magnetic field. The 2D carrier densities (1012 cm-2) extracted from magnetic depopulation are consistent with measurements by SdH oscillations at the 2D interface. Our results show that magneto-electric subbands of quasi-1D electron waveguides can reproduce known SdH signatures without discrepancies in electron density, and suggest that 2D SdH measurements may also arise from quasi-1D channels. We gratefully acknowledge financial support from AFOSR (FA9550-12-1- 0057 (JL) and FA9550-12-1-0342 (CBE)), ONR N00014-15-1-2847 (JL), and NSF DMR-1234096 (CBE).

Electronically Transparent Au-N Bonds for Molecular Junctions.

PubMed

Zang, Yaping; Pinkard, Andrew; Liu, Zhen-Fei; Neaton, Jeffrey B; Steigerwald, Michael L; Roy, Xavier; Venkataraman, Latha

2017-10-25

We report a series of single-molecule transport measurements carried out in an ionic environment with oligophenylenediamine wires. These molecules exhibit three discrete conducting states accessed by electrochemically modifying the contacts. Transport in these junctions is defined by the oligophenylene backbone, but the conductance is increased by factors of ∼20 and ∼400 when compared to traditional dative junctions. We propose that the higher-conducting states arise from in situ electrochemical conversion of the dative Au←N bond into a new type of Au-N contact. Density functional theory-based transport calculations establish that the new contacts dramatically increase the electronic coupling of the oligophenylene backbone to the Au electrodes, consistent with experimental transport data. The resulting contact resistance is the lowest reported to date; more generally, our work demonstrates a facile method for creating electronically transparent metal-organic interfaces.

Effects of B site doping on electronic structures of InNbO4 based on hybrid density functional calculations

NASA Astrophysics Data System (ADS)

Lu, M. F.; Zhou, C. P.; Li, Q. Q.; Zhang, C. L.; Shi, H. F.

2018-01-01

In order to improve the photocatalytic activity under visible-light irradiation, we adopted first principle calculations based on density functional theory (DFT) to calculate the electronic structures of B site transition metal element doped InNbO4. The results indicated that the complete hybridization of Nb 4d states and some Ti 3d states contributed to the new conduction band of Ti doped InNbO4, barely changing the position of band edge. For Cr doping, some localized Cr 3d states were introduced into the band gap. Nonetheless, the potential of localized levels was too positive to cause visible-light reaction. When it came to Cu doping, the band gap was almost same with that of InNbO4 as well as some localized Cu 3d states appeared above the top of VB. The introduction of localized energy levels benefited electrons to migrate from valence band (VB) to conduction band (CB) by absorbing lower energy photons, realizing visible-light response.

First-principles study of the effect of functional groups on polyaniline backbone

PubMed Central

Chen, X. P.; Jiang, J. K.; Liang, Q. H.; Yang, N.; Ye, H. Y.; Cai, M.; Shen, L.; Yang, D. G.; Ren, T. L.

2015-01-01

We present a first-principles density functional theory study focused on how the chemical and electronic properties of polyaniline are adjusted by introducing suitable substituents on a polymer backbone. Analyses of the obtained energy barriers, reaction energies and minimum energy paths indicate that the chemical reactivity of the polyaniline derivatives is significantly enhanced by protonic acid doping of the substituted materials. Further study of the density of states at the Fermi level, band gap, HOMO and LUMO shows that both the unprotonated and protonated states of these polyanilines are altered to different degrees depending on the functional group. We also note that changes in both the chemical and electronic properties are very sensitive to the polarity and size of the functional group. It is worth noting that these changes do not substantially alter the inherent chemical and electronic properties of polyaniline. Our results demonstrate that introducing different functional groups on a polymer backbone is an effective approach to obtain tailored conductive polymers with desirable properties while retaining their intrinsic properties, such as conductivity. PMID:26584671

Anatomical features associated with water transport in imperforate tracheary elements of vessel-bearing angiosperms

PubMed Central

Sano, Yuzou; Morris, Hugh; Shimada, Hiroshi; Ronse De Craene, Louis P.; Jansen, Steven

2011-01-01

Background and Aims Imperforate tracheary elements (ITEs) in wood of vessel-bearing angiosperms may or may not transport water. Despite the significance of hydraulic transport for defining ITE types, the combination of cell structure with water transport visualization in planta has received little attention. This study provides a quantitative analysis of structural features associated with the conductive vs. non-conductive nature of ITEs. Methods Visualization of water transport was studied in 15 angiosperm species by dye injection and cryo-scanning electron microscopy. Structural features of ITEs were examined using light and electron microscopy. Key Results ITEs connected to each other by pit pairs with complete pit membranes contributed to water transport, while cells showing pit membranes with perforations up to 2 µm were hydraulically not functional. A close relationship was found between pit diameter and pit density, with both characters significantly higher in conductive than in non-conductive cells. In species with both conductive and non-conductive ITEs, a larger diameter was characteristic of the conductive cells. Water transport showed no apparent relationship with the length of ITEs and vessel grouping. Conclusions The structure and density of pits between ITEs represent the main anatomical characters determining water transport. The pit membrane structure of ITEs provides a reliable, but practically challenging, criterion to determine their conductive status. It is suggested that the term tracheids should strictly be used for conductive ITEs, while fibre-tracheids and libriform fibres are non-conductive. PMID:21385773

Bias-dependent oscillatory electron transport of monatomic sulfur chains

NASA Astrophysics Data System (ADS)

Yu, Jing-Xin; Cheng, Yan; Sanvito, Stefano; Chen, Xiang-Rong

2012-03-01

The bias-dependent oscillatory electron transport of monatomic sulfur chains sandwiched between gold electrodes is investigated with density functional theory and non-equilibrium Green's function method. At zero bias, in contrast to the typical odd-even oscillations observed in most metallic chains, we find that the conductance oscillates with a period of four atoms. However, as the bias voltage is increased the current displays a two-atom periodicity. This emerges gradually, first for the longer chains and then, at voltages larger than 0.7 V, for lengths. The oscillatory behaviors are analyzed by the density of states and the energy-dependent and bias-dependent transmission coefficients.

N2 Temperature of Vibration instrument for sounding rocket observation in the lower thermosphere

NASA Astrophysics Data System (ADS)

Kurihara, J.; Iwagami, N.; Oyama, K.-I.

2013-11-01

The N2 Temperature of Vibration (NTV) instrument was developed to study energetics and structure of the lower thermosphere, applying the Electron Beam Fluorescence (EBF) technique to measurements of vibrational temperature, rotational temperature and number density of atmospheric N2. The sounding rocket experiments using this instrument have been conducted four times, including one failure of the electron gun. Aerodynamic effects on the measurement caused by the supersonic motion of the rocket were analyzed quantitatively using three-dimensional simulation of Direct Simulation Monte Carlo (DSMC) method, and the absolute density profile was obtained through the correction of the spin modulation.

Coulomb disorder in three-dimensional Dirac materials

NASA Astrophysics Data System (ADS)

Skinner, Brian

2015-03-01

In three-dimensional materials with a Dirac spectrum, weak short-ranged disorder is essentially irrelevant near the Dirac point. This is manifestly not the case for Coulomb disorder, where the long-ranged nature of the potential produced by charged impurities implies large fluctuations of the disorder potential even when impurities are sparse, and these fluctuations are screened by the formation of electron/hole puddles. Here I outline a theory of such nonlinear screening of Coulomb disorder in three-dimensional Dirac systems, and present results for the typical magnitude of the disorder potential, the corresponding density of states, and the size and density of electron/hole puddles. The resulting conductivity is also discussed.

Growth and Transport Studies of LaTiO3 / KTaO3 Heterostructures

NASA Astrophysics Data System (ADS)

Zou, K.; Walker, F. J.; Ahn, C. H.

2014-03-01

Perovskite oxide heterostructures provide a rich platform for exploring emergent electronic properties, such as 2D electron gases (2DEGs) at interfaces. In this talk, we present results on the growth of LaTiO3 / KTaO3 heterostructures by molecular beam epitaxy and subsequent measurements of transport properties. Although both oxide materials are insulating in the bulk, metallic conduction is observed from T = 2 - 300 K. We achieve a room temperature carrier mobility of ~ 25 cm2 /Vs at a carrier density of ~ 1014 /cm2. By comparison, 2DEGs in LaTiO3 / SrTiO3 and LaAlO3 / SrTiO3 have lower carrier mobility, but the same carrier density. We attribute some of the increase in mobility to the smaller band effective mass of the Ta 4d electrons compared to the Ti 3d electrons.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parkin, William M.; Balan, Adrian; Liang, Liangbo

Here, we report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy (TEM) two-terminal conductivity of monolayer MoS 2 under electron irradiation. We observe a redshift in the E Raman peak and a less pronounced blueshift in the A' 1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy (EDS), we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %), which is confirmed by first-principles density functional theory calculations. Inmore » situ device current measurements show exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS 2-based transport channels.« less

All Solid State Rechargeable Lithium Batteries using Block Copolymers

NASA Astrophysics Data System (ADS)

Hallinan, Daniel; Balsara, Nitash

2011-03-01

The growing need for alternative energy and increased demand for mobile technology require higher density energy storage. Existing battery technologies, such as lithium ion, are limited by theoretical energy density as well as safety issues. Other battery chemistries are promising options for dramatically increasing energy density. Safety can be improved by replacing the flammable, reactive liquids used in existing lithium-ion battery electrolytes with polymer electrolytes. Block copolymers are uniquely suited for this task because ionic conductivity and mechanical strength, both important properties in battery formulation, can be independently controlled. In this study, lithium batteries were assembled using lithium metal as negative electrode, polystyrene-b-poly(ethylene oxide) copolymer with lithium salt as electrolyte, and a positive electrode. The positive electrode consisted of polymer electrolyte for ion conduction, carbon for electron conduction, and an active material. Batteries were charged and discharged over many cycles. The battery cycling results were compared to a conventional battery chemistry.

Prediction of a mobile two-dimensional electron gas at the LaSc O3 /BaSn O3 (001) interface

NASA Astrophysics Data System (ADS)

Paudel, Tula R.; Tsymbal, Evgeny Y.

2017-12-01

Two-dimensional electron gases (2DEG) at oxide interfaces, such as LaAl O3 /SrTi O3 (001), have aroused significant interest due to their high carrier density (˜1014c m-2 ) and strong lateral confinement (˜1 nm). However, these 2DEGs are normally hosted by the weakly dispersive and degenerate d bands (e.g., Ti -3 d bands), which are strongly coupled to the lattice, causing mobility of such 2DEGs to be relatively low at room temperature (˜1 c m2/Vs ). Here, we propose using oxide host materials with the conduction bands formed from s electrons to increase carrier mobility and soften its temperature dependence. Using first-principles density functional theory calculations, we investigate LaSc O3 /BaSn O3 (001) heterostructure and as a model system, where the conduction band hosts the s -like carriers. We find that the polar discontinuity at this interface leads to electronic reconstruction resulting in the formation of the 2DEG at this interface. The conduction electrons reside in the highly dispersive Sn -5 s bands, which have a large band width and a low effective mass. The predicted 2DEG is expected to be highly mobile even at room temperature due to the reduced electron-phonon scattering via the inter-band scattering channel. A qualitatively similar behavior is predicted for a doped BaSn O3 , where a monolayer of BaO is replaced with LaO. We anticipate that the quantum phenomena associated with these 2DEGs to be more pronounced owing to the high mobility of the carriers.

Runaway electrons and mitigation studies in MST tokamak plasmas

NASA Astrophysics Data System (ADS)

Goetz, J. A.; Chapman, B. E.; Almagri, A. F.; Cornille, B. S.; Dubois, A.; McCollam, K. J.; Munaretto, S.; Sovinec, C. R.

2016-10-01

Studies of runaway electrons generated in low-density MST tokamak plasmas are being undertaken. The plasmas have Bt <= 0.14 T, Ip <= 50 kA, q (a) = 2.2 , and an electron density and temperature of about 5 ×1017m-3 and 150 eV. Runaway electrons are detected via x-ray bremsstrahlung emission. The density and electric field thresholds for production and suppression have been previously explored with variations in gas puffing for density control. Runaway electrons are now being probed with resonant magnetic perturbations (RMP's). An m = 3 RMP strongly suppresses the runaway electrons and initial NIMROD modeling shows that this may be due to degradation of flux surfaces. The RMP is produced by a poloidal array of 32 saddle coils at the narrow vertical insulated cut in MST's thick conducting shell, with each RMP having a single m but a broad n spectrum. While a sufficiently strong m = 3 RMP suppresses the runaway electrons, an RMP with m = 1 and comparable amplitude has little effect. The impact of the RMP's on the magnetic topology of these plasmas is being studied with the nonlinear MHD code NIMROD. With an m = 3 RMP, stochasticity is introduced in the outer third of the plasma but no such flux surface degradation is observed with an m = 1 RMP. NIMROD also predicts regularly occurring MHD activity similar to that observed in the experiment. These studies have also been done in q (a) = 2.7 plasmas and analysis and modeling is ongoing. This work supported by USDoE.

Parameter dependences of the separatrix density in nitrogen seeded ASDEX Upgrade H-mode discharges

NASA Astrophysics Data System (ADS)

Kallenbach, A.; Sun, H. J.; Eich, T.; Carralero, D.; Hobirk, J.; Scarabosio, A.; Siccinio, M.; ASDEX Upgrade Team; EUROfusion MST1 Team

2018-04-01

The upstream separatrix electron density is an important interface parameter for core performance and divertor power exhaust. It has been measured in ASDEX Upgrade H-mode discharges by means of Thomson scattering using a self-consistent estimate of the upstream electron temperature under the assumption of Spitzer-Härm electron conduction. Its dependence on various plasma parameters has been tested for different plasma conditions in H-mode. The leading parameter determining n e,sep was found to be the neutral divertor pressure, which can be considered as an engineering parameter since it is determined mainly by the gas puff rate and the pumping speed. The experimentally found parameter dependence of n e,sep, which is dominated by the divertor neutral pressure, could be approximately reconciled by 2-point modelling.

Theoretical modeling of electronic transport in molecular devices

NASA Astrophysics Data System (ADS)

Piccinin, Simone

In this thesis a novel approach for simulating electronic transport in nanoscale structures is introduced. We consider an open quantum system (the electrons of structure) accelerated by an external electromotive force and dissipating energy through inelastic scattering with a heat bath (phonons) acting on the electrons. This method can be regarded as a quantum-mechanical extension of the semi-classical Boltzmann transport equation. We use periodic boundary conditions and employ Density Functional Theory to recast the many-particle problem in an effective single-particle mean-field problem. By explicitly treating the dissipation in the electrodes, the behavior of the potential is an outcome of our method, at variance with the scattering approaches based on the Landauer formalism. We study the self-consistent steady-state solution, analyzing the out-of-equilibrium electron distribution, the electrical characteristics, the behavior of the self-consistent potential and the density of states of the system. We apply the method to the study of electronic transport in several molecular devices, consisting of small organic molecules or atomic wires sandwiched between gold surfaces. For gold wires we recover the experimental evidence that transport in short wires is ballistic, independent of the length of the wire and with conductance of one quantum. In benzene-1,4-dithiol we find that the delocalization of the frontier orbitals of the molecule is responsible for the high value of conductance and that, by inserting methylene groups to decouple the sulfur atoms from the carbon ring, the current is reduced, in agreement with the experimental measurements. We study the effect a geometrical distortion in a molecular device, namely the relative rotation of the carbon rings in a biphenyl-4,4'-dithiol molecule. We find that the reduced coupling between pi orbitals of the rings induced by the rotation leads to a reduction of the conductance and that this behavior is captured by a simple two level model. Finally the transport properties of alkanethiol monolayers are analyzed by means of the local density of states at the Fermi energy: we find an exponential dependence of the current on the length of the chain, in quantitative agreement with the corresponding experiments.

Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems

NASA Astrophysics Data System (ADS)

Zappe, Hans P.; Jantz, Wolfgang

1990-12-01

The use of magnetic-field-dependent microwave absorption as a nondestructive and contact-free means to study transport behavior in GaAs/AlGaAs devices is explored. This technique allows quick measurement of resistance, mobility, and carrier concentration in bulk substrates as well as in the two-dimensional electron gas of heterostructure quantum wells. The two- and three-dimensional conductivities may be separably evaluated, allowing detailed study of conduction in the active layer of high-electron-mobility devices. A brief theoretical foundation is provided, followed by application of the approach to examination of device structural dependencies, carrier-density conduction behavior, and the effects of etch processing on quantum-well integrity.

Dissection of the Voltage Losses of an Acidic Quinone Redox Flow Battery

DOE PAGES

Chen, Qing; Gerhardt, Michael R.; Aziz, Michael J.

2017-03-28

We measure the polarization characteristics of a quinone-bromide redox flow battery with interdigitated flow fields, using electrochemical impedance spectroscopy and voltammetry of a full cell and of a half cell against a reference electrode. We find linear polarization behavior at 50% state of charge all the way to the short-circuit current density of 2.5 A/cm 2. We uniquely identify the polarization area-specific resistance (ASR) of each electrode, the membrane ASR to ionic current, and the electronic contact ASR. We use voltage probes to deduce the electronic current density through each sheet of carbon paper in the quinone-bearing electrode. By alsomore » interpreting the results using the Newman 1-D porous electrode model, we deduce the volumetric exchange current density of the porous electrode. We uniquely evaluate the power dissipation and identify a correspondence to the contributions to the electrode ASR from the faradaic, electronic, and ionic transport processes. We find that, within the electrode, more power is dissipated in the faradaic process than in the electronic and ionic conduction processes combined, despite the observed linear polarization behavior. We examine the sensitivity of the ASR to the values of the model parameters. The greatest performance improvement is anticipated from increasing the volumetric exchange current density.« less

Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations

NASA Astrophysics Data System (ADS)

Sadasivam, Sridhar; Ye, Ning; Feser, Joseph P.; Charles, James; Miao, Kai; Kubis, Tillmann; Fisher, Timothy S.

2017-02-01

Heat transfer across metal-semiconductor interfaces involves multiple fundamental transport mechanisms such as elastic and inelastic phonon scattering, and electron-phonon coupling within the metal and across the interface. The relative contributions of these different transport mechanisms to the interface conductance remains unclear in the current literature. In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi2-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used "mixing rules" to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi2-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.

Ionospheric Results with Sounding Rockets and the Explorer VIII Satellite (1960 )

NASA Technical Reports Server (NTRS)

Bourdeau, R. E.

1961-01-01

A review is made of ionospheric data reported since the IGY from rocket and satellite-borne ionospheric experiments. These include rocket results on electron density (RF impedance probe), D-region conductivity (Gerdien condenser), and electron temperature (Langmuir probe). Also included are data in the 1000 kilometer region on ion concentration (ion current monitor) and electron temperature from the Explorer VIII Satellite (1960 xi). The review includes suggestions for second generation experiments and combinations thereof particularly suited for small sounding rockets.

Electron gas at the interface between two antiferromagnetic insulating manganites

NASA Astrophysics Data System (ADS)

Calderón, M. J.; Salafranca, J.; Brey, L.

2008-07-01

We study theoretically the magnetic and electric properties of the interface between two antiferromagnetic and insulating manganites: La0.5Ca0.5MnO3 , a strong correlated insulator, and CaMnO3 , a band insulator. We find that a ferromagnetic and metallic electron gas is formed at the interface between the two layers. We confirm the metallic character of the interface by calculating the in-plane conductance. The possibility of increasing the electron-gas density by selective doping is also discussed.

Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition

NASA Astrophysics Data System (ADS)

Kim, S.; Russell, M.; Henry, M.; Kim, S. S.; Naik, R. R.; Voevodin, A. A.; Jang, S. S.; Tsukruk, V. V.; Fedorov, A. G.

2015-09-01

We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability. Electronic supplementary information (ESI) available: Optimization of a PMMA-mediated wet transfer method of graphene, transfer characteristics of all the channels, raw data of drain-source current measured by sweeping a backgate voltage and an AFM topography image and cross-sectional profiles of Fig. 4 and the corresponding electrical measurement along with an estimation of carbon diffusion coefficient. See DOI: 10.1039/c5nr04063a

High quality transparent conducting oxide thin films

DOEpatents

Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

2012-08-28

A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

Quantum transport through a deformable molecular transistor

NASA Astrophysics Data System (ADS)

Cornaglia, P. S.; Grempel, D. R.; Ness, H.

2005-02-01

The linear transport properties of a model molecular transistor with electron-electron and electron-phonon interactions were investigated analytically and numerically. The model takes into account phonon modulation of the electronic energy levels and of the tunneling barrier between the molecule and the electrodes. When both effects are present they lead to asymmetries in the dependence of the conductance on gate voltage. The Kondo effect is observed in the presence of electron-phonon interactions. There are important qualitative differences between the cases of weak and strong coupling. In the first case the standard Kondo effect driven by spin fluctuations occurs. In the second case, it is driven by charge fluctuations. The Fermi-liquid relation between the spectral density of the molecule and its charge is altered by electron-phonon interactions. Remarkably, the relation between the zero-temperature conductance and the charge remains unchanged. Therefore, there is perfect transmission in all regimes whenever the average number of electrons in the molecule is an odd integer.

Electronic structure of HxVO2 probed with in-situ spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Kim, So Yeun; Sandilands, Luke J.; Kang, Taedong; Son, Jaeseok; Sohn, C. H.; Yoon, Hyojin; Son, Junwoo; Moon, S. J.; Noh, T. W.

Vanadium dioxide (VO2) undergoes a metal-to-insulator transition (MIT) near 340K. Despite extensive studies on this material, the role of electron-electron correlation and electron-lattice interactions in driving this MIT is still under debate. Recently, it was demonstrated that hydrogen can be reversibly absorbed into VO2 thin film without destroying the lattice framework. This H-doping allows systematic control of the electron density and lattice structure which in turn leads to a insulator (VO2) - metal (HxVO2) - insulator (HVO2) phase modulation. To better understand the phase modulation of HxVO2, we used in-situ spectroscopic ellipsometry to monitor the electronic structure during the hydrogenization process, i.e. we measured the optical conductivity of HxVO2 while varying x. Starting in the high temperature rutile metallic phase of VO2, we observed a large change in the electronic structure upon annealing in H gas at 370K: the low energy conductivity is continuously suppressed, consistent with reported DC resistivity data, while the conductivity peaks at high energy show strong changes in energy and spectral weight. The implications of our results for the MIT in HxVO2 will be discussed.

Surface flashover performance of epoxy resin microcomposites improved by electron beam irradiation

NASA Astrophysics Data System (ADS)

Huang, Yin; Min, Daomin; Li, Shengtao; Li, Zhen; Xie, Dongri; Wang, Xuan; Lin, Shengjun

2017-06-01

The influencing mechanism of electron beam irradiation on surface flashover of epoxy resin/Al2O3 microcomposite was investigated. Epoxy resin/Al2O3 microcomposite samples with a diameter of 50 mm and a thickness of 1 mm were prepared. The samples were irradiated by electron beam with energies of 10 and 20 keV and a beam current of 5 μA for 5 min. Surface potential decay, surface conduction, and surface flashover properties of untreated and irradiated samples were measured. Both the decay rate of surface potential and surface conductivity decrease with an increase in the energy of electron beam. Meanwhile, surface flashover voltage increase. It was found that both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. The increase in the energy and density of deep surface traps enhance the ability to capture primary emitted electrons. In addition, the decrease in surface conductivity blocks electron emission at the cathode triple junction. Therefore, electron avalanche at the interface between gas and an insulating material would be suppressed, eventually improving surface flashover voltage of epoxy resin microcomposites.

Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties.

PubMed

Tran, Van-Truong; Saint-Martin, Jérôme; Dollfus, Philippe; Volz, Sebastian

2017-05-24

The enhancement of thermoelectric figure of merit ZT requires to either increase the power factor or reduce the phonon conductance, or even both. In graphene, the high phonon thermal conductivity is the main factor limiting the thermoelectric conversion. The common strategy to enhance ZT is therefore to introduce phonon scatterers to suppress the phonon conductance while retaining high electrical conductance and Seebeck coefficient. Although thermoelectric performance is eventually enhanced, all studies based on this strategy show a significant reduction of the electrical conductance. In this study we demonstrate that appropriate sources of disorder, including isotopes and vacancies at lowest electron density positions, can be used as phonon scatterers to reduce the phonon conductance in graphene ribbons without degrading the electrical conductance, particularly in the low-energy region which is the most important range for device operation. By means of atomistic calculations we show that the natural electronic properties of graphene ribbons can be fully preserved while their thermoelectric efficiency is strongly enhanced. For ribbons of width M = 5 dimer lines, room-temperature ZT is enhanced from less than 0.26 to more than 2.5. This study is likely to set the milestones of a new generation of nano-devices with dual electronic/thermoelectric functionalities.

Energy level alignment and quantum conductance of functionalized metal-molecule junctions: Density functional theory versus GW calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Chengjun; Markussen, Troels; Thygesen, Kristian S., E-mail: thygesen@fysik.dtu.dk

We study the effect of functional groups (CH{sub 3}*4, OCH{sub 3}, CH{sub 3}, Cl, CN, F*4) on the electronic transport properties of 1,4-benzenediamine molecular junctions using the non-equilibrium Green function method. Exchange and correlation effects are included at various levels of theory, namely density functional theory (DFT), energy level-corrected DFT (DFT+Σ), Hartree-Fock and the many-body GW approximation. All methods reproduce the expected trends for the energy of the frontier orbitals according to the electron donating or withdrawing character of the substituent group. However, only the GW method predicts the correct ordering of the conductance amongst the molecules. The absolute GWmore » (DFT) conductance is within a factor of two (three) of the experimental values. Correcting the DFT orbital energies by a simple physically motivated scissors operator, Σ, can bring the DFT conductances close to experiments, but does not improve on the relative ordering. We ascribe this to a too strong pinning of the molecular energy levels to the metal Fermi level by DFT which suppresses the variation in orbital energy with functional group.« less

Electronic Transport Properties of Carbon-Nanotube Networks: The Effect of Nitrate Doping on Intratube and Intertube Conductances

NASA Astrophysics Data System (ADS)

Ketolainen, T.; Havu, V.; Jónsson, E. Ö.; Puska, M. J.

2018-03-01

The conductivity of carbon-nanotube (CNT) networks can be improved markedly by doping with nitric acid. In the present work, CNTs and junctions of CNTs functionalized with NO3 molecules are investigated to understand the microscopic mechanism of nitric acid doping. According to our density-functional-theory band-structure calculations, there is charge transfer from the CNT to adsorbed molecules indicating p -type doping. The average doping efficiency of the NO3 molecules is higher if the NO3 molecules form complexes with water molecules. In addition to electron transport along individual CNTs, we also study electron transport between different types (metallic, semiconducting) of CNTs. Reflecting the differences in the electronic structures of semiconducting and metallic CNTs, we find that in addition to turning semiconducting CNTs metallic, doping further increases electron transport most efficiently along semiconducting CNTs as well as through the junctions between them.

Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n -doped SnO2

NASA Astrophysics Data System (ADS)

Borgatti, Francesco; Berger, J. A.; Céolin, Denis; Zhou, Jianqiang Sky; Kas, Joshua J.; Guzzo, Matteo; McConville, C. F.; Offi, Francesco; Panaccione, Giancarlo; Regoutz, Anna; Payne, David J.; Rueff, Jean-Pascal; Bierwagen, Oliver; White, Mark E.; Speck, James S.; Gatti, Matteo; Egdell, Russell G.

2018-04-01

The longstanding problem of interpretation of satellite structures in core-level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO2. Comparison of ab initio many-body calculations with experimental hard x-ray photoemission spectra of the Sn 4 d states shows that strong satellites are produced by coupling of the Sn core hole to the plasma oscillations of the free electrons introduced by doping. Within the same theoretical framework, spectral changes of the valence band spectra are also related to dynamical screening effects. These results demonstrate that, for the interpretation of electron correlation features in the core-level photoelectron spectra of such narrow-band materials, going beyond the homogeneous electron gas electron-plasmon coupling model is essential.

Visualizing One-Dimensional Electronic States and their Scattering in Semi-conducting Nanowires

NASA Astrophysics Data System (ADS)

Beidenkopf, Haim; Reiner, Jonathan; Norris, Andrew; Nayak, Abhay Kumar; Avraham, Nurit; Shtrikman, Hadas

One-dimensional electronic systems constitute a fascinating playground for the emergence of exotic electronic effects and phases, within and beyond the Tomonaga-Luttinger liquid paradigm. More recently topological superconductivity and Majorana modes were added to that long list of phenomena. We report scanning tunneling microscopy and spectroscopy measurements conducted on pristine, epitaxialy grown InAs nanowires. We resolve the 1D electronic band structure manifested both via Van-Hove singularities in the local density-of-states, as well as by the quasi-particle interference patterns, induced by scattering from surface impurities. By studying the scattering of the one-dimensional electronic states off various scatterers, including crystallographic defects and the nanowire end, we identify new one-dimensional relaxation regimes and yet unexplored effects of interactions. Some of these may bear implications on the topological superconducting state and Majorana modes therein. The authors acknowledge support from the Israeli Science Foundation (ISF).

Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System

NASA Astrophysics Data System (ADS)

Gusev, G. M.; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.

2010-04-01

We study the transport properties of HgTe-based quantum wells containing simultaneously electrons and holes in a magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity σxy≈0 and in a minimum of diagonal conductivity σxx at ν=νp-νn=0, where νn and νp are the electron and hole Landau level filling factors. We suggest that the transport at the CNP point is determined by electron-hole “snake states” propagating along the ν=0 lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in a random magnetic field with a zero mean value.

Efficient DFT+U calculations of ballistic electron transport: Application to Au monatomic chains with a CO impurity

NASA Astrophysics Data System (ADS)

Sclauzero, Gabriele; Dal Corso, Andrea

2013-02-01

An efficient method for computing the Landauer-Büttiker conductance of an open quantum system within DFT+U is presented. The Hubbard potential is included in electronic-structure and transport calculations as a simple renormalization of the nonlocal pseudopotential coefficients by restricting the integration for the onsite occupations within the cutoff spheres of the pseudopotential. We apply the methodology to the case of an Au monatomic chain in the presence of a CO molecule adsorbed on it. We show that the Hubbard U correction removes the spurious magnetization in the pristine Au chain at the equilibrium spacing, as well as the unphysical contribution of d electrons to the conductance, resulting in a single (spin-degenerate) transmission channel and a more realistic conductance of 1G0. We find that the conductance reduction due to CO adsorption is much larger for the atop site than for the bridge site, so that the general picture of electron transport in stretched Au chains given by the local density approximation remains valid at the equilibrium Au-Au spacing within DFT+U.

First-principles modeling of the thermoelectric properties of SrTiO3/SrRuO3 superlattices

NASA Astrophysics Data System (ADS)

García-Fernández, Pablo; Verissimo-Alves, Marcos; Bilc, Daniel I.; Ghosez, Philippe; Junquera, Javier

2012-08-01

Using a combination of first-principles simulations, based on density functional theory and Boltzmann's semiclassical theory, we have calculated the transport and thermoelectric properties of the half-metallic two-dimensional electron gas confined in single SrRuO3 layers of SrTiO3/SrRuO3 periodic superlattices. Close to the Fermi energy, we find that the semiconducting majority-spin channel displays a very large in-plane component of the Seebeck tensor at room temperature, S˜ 1500 μV/K, and the minority-spin channel shows good in-plane conductivity, σ=2.5 (mΩ cm)-1. However, we find that the total power factor and thermoelectric figure of merit for reduced doping is too small for practical applications. Our results support that the confinement of the electronic motion is not the only thing that matters to describe the main features of the transport and thermoelectric properties with respect the chemical doping, but the shape of the electronic density of states, which in our case departs from the free-electron behavior, is also important. The evolution of the electronic structure, electrical conductivity, Seebeck coefficient, and power factor as a function of the chemical potential is explained by a simplified tight-binding model. We find that the electron gas in our system is composed by a pair of one-dimensional electron gases orthogonal to each other. This reflects the fact the physical dimensionality of the electronic system (1D) can be even smaller than that of the spacial confinement of the carriers (2D).

A tight binding model study of tunneling conductance spectra of spin and orbitally ordered CMR manganites

NASA Astrophysics Data System (ADS)

Panda, Saswati; Sahoo, D. D.; Rout, G. C.

2018-04-01

We report here a tight binding model for colossal magnetoresistive (CMR) manganites to study the pseudo gap (PG) behavior near Fermi level. In the Kubo-Ohata type DE model, we consider first and second nearest neighbor interactions for transverse spin fluctuations in core band and hopping integrals in conduction band, in the presence of static band Jahn-Teller distortion. The model Hamiltonian is solved using Zubarev's Green's function technique. The electron density of states (DOS) is found out from the Green's functions. We observe clear PG near Fermi level in the electron DOS.

Raman shifts in electron-irradiated monolayer MoS 2

DOE PAGES

Parkin, William M.; Balan, Adrian; Liang, Liangbo; ...

2016-03-21

Here, we report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy (TEM) two-terminal conductivity of monolayer MoS 2 under electron irradiation. We observe a redshift in the E Raman peak and a less pronounced blueshift in the A' 1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy (EDS), we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %), which is confirmed by first-principles density functional theory calculations. Inmore » situ device current measurements show exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS 2-based transport channels.« less

Physical properties of monolithic U8 wt.%-Mo

NASA Astrophysics Data System (ADS)

Hengstler, R. M.; Beck, L.; Breitkreutz, H.; Jarousse, C.; Jungwirth, R.; Petry, W.; Schmid, W.; Schneider, J.; Wieschalla, N.

2010-07-01

As a possible high density fuel for research reactors, monolithic U8 wt.%-Mo ("U8Mo") was examined with regard to its structural, thermal and electric properties. X-ray diffraction by the Bragg-Brentano method was used to reveal the tetragonal lattice structure of rolled U8Mo. The specific heat capacity of cast U8Mo was determined by differential scanning calorimetry, its thermal diffusivity was measured by the laser flash method and its mass density by Archimedes' principle. From these results, the thermal conductivity of U8Mo in the temperature range from 40 °C to 250 °C was calculated; in the measured temperature range, it is in good accordance with literature data for UMo with 8 and 9 wt.% Mo, is higher than for 10 wt.% Mo and lower than for 5 wt.% Mo. The electric conductivity of rolled and cast U8Mo was measured by a four-wire method and the electron based part of the thermal conductivity calculated by the Wiedemann-Frantz law. Rolled and cast U8Mo was irradiated at about 150 °C with 80 MeV 127I ions to receive the same iodine ion density in the damage peak region as the fission product density in the fuel of a typical high flux reactor after the targeted nuclear burn-up. XRD analysis of irradiated U8Mo showed a change of the lattice parameters as well as the creation of UO 2 in the superficial sample regions; however, a phase change by irradiation was not observed. The determination of the electron based part of the thermal conductivity of the irradiated samples failed due to high measurement errors which are caused by the low thickness of the damage region in the ion irradiated samples.

Influence of the cytoplasmic domains of aquaporin-4 on water conduction and array formation.

PubMed

Mitsuma, Tadanori; Tani, Kazutoshi; Hiroaki, Yoko; Kamegawa, Akiko; Suzuki, Hiroshi; Hibino, Hiroshi; Kurachi, Yoshihisa; Fujiyoshi, Yoshinori

2010-10-01

Phosphorylation of Ser180 in cytoplasmic loop D has been shown to reduce the water permeability of aquaporin (AQP) 4, the predominant water channel in the brain. However, when the structure of the S180D mutant (AQP4M23S180D), which was generated to mimic phosphorylated Ser180, was determined to 2.8 Å resolution using electron diffraction patterns, it showed no significant differences from the structure of the wild-type channel. High-resolution density maps usually do not resolve protein regions that are only partially ordered, but these can sometimes be seen in lower-resolution density maps calculated from electron micrographs. We therefore used images of two-dimensional crystals and determined the structure of AQP4M23S180D at 10 A resolution. The features of the 10-A density map are consistent with those of the previously determined atomic model; in particular, there were no indications of any obstruction near the cytoplasmic pore entrance. In addition, water conductance measurements, both in vitro and in vivo, show the same water permeability for wild-type and mutant AQP4M23, suggesting that the S180D mutation neither reduces water conduction through a conformational change nor reduces water conduction by interacting with a protein that would obstruct the cytoplasmic channel entrance. Finally, the 10-A map shows a cytoplasmic density in between four adjacent tetramers that most likely represents the association of four N termini. This finding supports the critical role of the N terminus of AQP4 in the stabilization of orthogonal arrays, as well as their interference through lipid modification of cysteine residues in the longer N-terminal isoform. Copyright © 2010 Elsevier Ltd. All rights reserved.

Statistical density modification using local pattern matching

DOEpatents

Terwilliger, Thomas C.

2007-01-23

A computer implemented method modifies an experimental electron density map. A set of selected known experimental and model electron density maps is provided and standard templates of electron density are created from the selected experimental and model electron density maps by clustering and averaging values of electron density in a spherical region about each point in a grid that defines each selected known experimental and model electron density maps. Histograms are also created from the selected experimental and model electron density maps that relate the value of electron density at the center of each of the spherical regions to a correlation coefficient of a density surrounding each corresponding grid point in each one of the standard templates. The standard templates and the histograms are applied to grid points on the experimental electron density map to form new estimates of electron density at each grid point in the experimental electron density map.

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

NASA Astrophysics Data System (ADS)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

Theoretical Calculation of the Gas-Sensing Properties of Pt-Decorated Carbon Nanotubes

PubMed Central

Zhang, Xiaoxing; Dai, Ziqiang; Wei, Li; Liang, Naifeng; Wu, Xiaoqing

2013-01-01

The gas-sensing properties of Pt-decorated carbon nanotubes (CNTs), which provide a foundation for the fabrication of sensors, have been evaluated. In this study, we calculated the gas adsorption of Pt-decorated (8,0) single-wall CNTs (Pt-SWCNTs) with SO2, H2S, and CO using GGA/PW91 method based on density functional theory. The adsorption energies and the changes in geometric and electronic structures after absorption were comprehensively analyzed to estimate the responses of Pt-SWCNTs. Results indicated that Pt-SWCNTs can respond to the three gases. The electrical characteristics of Pt-SWCNTs show different changes after adsorption. Pt-SWCNTs donate electrons and increase the number of hole carriers after adsorbing SO2, thereby enhancing its conductivity. When H2S is adsorbed on CNTs, electrons are transferred from H2S to Pt-SWCNTs, converting Pt-SWCNTs from p-type to n-type sensors with improved conductivity. However, Pt-SWCNTs obtain electrons and show decreased conductivity when reacted with CO gas. PMID:24201317

DOE Office of Scientific and Technical Information (OSTI.GOV)

Knyazev, D. V.; Moscow Institute of Physics and Technology; State Scientific Center of the Russian Federation – Institute for Theoretical and Experimental Physics of National Research Centre “Kurchatov Institute,” Bolshaya Cheremushkinskaya 25, 117218 Moscow

This work covers an ab initio calculation of thermodynamic, transport, and optical properties of plastics of the effective composition CH{sub 2} at density 0.954 g/cm{sup 3} in the temperature range from 5 kK up to 100 kK. The calculation is based on the quantum molecular dynamics, density functional theory, and the Kubo-Greenwood formula. The temperature dependence of the static electrical conductivity σ{sub 1{sub D{sub C}}}(T) has a step-like shape: σ{sub 1{sub D{sub C}}}(T) grows rapidly for 5 kK ≤ T ≤ 10 kK and is almost constant for 20 kK ≤ T ≤ 60 kK. The additional analysis based on the investigation of the electron density of states (DOS) is performed.more » The rapid growth of σ{sub 1{sub D{sub C}}}(T) at 5 kK ≤ T ≤ 10 kK is connected with the increase of DOS at the electron energy equal to the chemical potential ϵ = μ. The frequency dependence of the dynamic electrical conductivity σ{sub 1}(ω) at 5 kK has the distinct non-Drude shape with the peak at ω ≈ 10 eV. This behavior of σ{sub 1}(ω) was explained by the dip at the electron DOS.« less

Tuning Nanocrystal Surface Depletion by Controlling Dopant Distribution as a Route Toward Enhanced Film Conductivity

NASA Astrophysics Data System (ADS)

Staller, Corey M.; Robinson, Zachary L.; Agrawal, Ankit; Gibbs, Stephen L.; Greenberg, Benjamin L.; Lounis, Sebastien D.; Kortshagen, Uwe R.; Milliron, Delia J.

2018-05-01

Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a means to manipulate the NC depletion width. We find in films of ITO NCs of equal overall dopant concentration that those with dopant-enriched surfaces show decreased depletion width and increased conductivity. Variable temperature conductivity data shows electron localization length increases and associated depletion width decreases monotonically with increased density of dopants near the NC surface. We calculate band profiles for NCs of differing radial dopant distributions and, in agreement with variable temperature conductivity fits, find NCs with dopant-enriched surfaces have narrower depletion widths and longer localization lengths than those with dopant-enriched cores. Following amelioration of NC surface depletion by atomic layer deposition of alumina, all films of equal overall dopant concentration have similar conductivity. Variable temperature conductivity measurements on alumina-capped films indicate all films behave as granular metals. Herein, we conclude that dopant-enriched surfaces decrease the near-surface depletion region, which directly increases the electron localization length and conductivity of NC films.

Tuning Nanocrystal Surface Depletion by Controlling Dopant Distribution as a Route Toward Enhanced Film Conductivity.

PubMed

Staller, Corey M; Robinson, Zachary L; Agrawal, Ankit; Gibbs, Stephen L; Greenberg, Benjamin L; Lounis, Sebastien D; Kortshagen, Uwe R; Milliron, Delia J

2018-05-09

Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a means to manipulate the NC depletion width. We find in films of ITO NCs of equal overall dopant concentration that those with dopant-enriched surfaces show decreased depletion width and increased conductivity. Variable temperature conductivity data show electron localization length increases and associated depletion width decreases monotonically with increased density of dopants near the NC surface. We calculate band profiles for NCs of differing radial dopant distributions and in agreement with variable temperature conductivity fits find NCs with dopant-enriched surfaces have narrower depletion widths and longer localization lengths than those with dopant-enriched cores. Following amelioration of NC surface depletion by atomic layer deposition of alumina, all films of equal overall dopant concentration have similar conductivity. Variable temperature conductivity measurements on alumina-capped films indicate all films behave as granular metals. Herein, we conclude that dopant-enriched surfaces decrease the near-surface depletion region, which directly increases the electron localization length and conductivity of NC films.

Evidence for a first-order liquid-liquid transition in high-pressure hydrogen from ab initio simulations.

PubMed

Morales, Miguel A; Pierleoni, Carlo; Schwegler, Eric; Ceperley, D M

2010-07-20

Using quantum simulation techniques based on either density functional theory or quantum Monte Carlo, we find clear evidence of a first-order transition in liquid hydrogen, between a low conductivity molecular state and a high conductivity atomic state. Using the temperature dependence of the discontinuity in the electronic conductivity, we estimate the critical point of the transition at temperatures near 2,000 K and pressures near 120 GPa. Furthermore, we have determined the melting curve of molecular hydrogen up to pressures of 200 GPa, finding a reentrant melting line. The melting line crosses the metalization line at 700 K and 220 GPa using density functional energetics and at 550 K and 290 GPa using quantum Monte Carlo energetics.

Carbon Nanotube Based Molecular Electronics

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Saini, Subhash; Menon, Madhu

1998-01-01

Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

Ab-initio Study of the Electron Mobility in a Functionalized UiO-66 Metal Organic Framework

NASA Astrophysics Data System (ADS)

Musho, Terence D.; Yasin, Alhassan S.

2018-03-01

This study leverages density functional theory accompanied with Boltzmann transport equation approaches to investigate the electronic mobility as a function of inorganic substitution and functionalization in a thermally stable UiO-66 metal-organic framework (MOF). The MOFs investigated are based on Zr-UiO-66 MOF with three functionalization groups of benzene dicarboxylate (BDC), BDC functionalized with an amino group (BDC + NH_2 ) and a nitro group (BDC + NO_2 ). The design space of this study is bound by UiO-66(M)-R, [M=Zr , Ti, Hf; R=BDC , BDC+NO_2 , BDC+NH_2 ]. The elastic modulus was not found to vary significantly over the structural modification of the design space for either functionalization or inorganic substitution. However, the electron-phonon scattering potential was found to be controllable by up to 30% through controlled inorganic substitution in the metal clusters of the MOF structure. The highest electron mobility was predicted for a UiO-66(Hf_5Zr_1 ) achieving a value of approximately 1.4× 10^{-3} cm^2 /V s. It was determined that functionalization provides a controlled method of modulating the charge density, while inorganic substitution provides a controlled method of modulating the electronic mobility. Within the proposed design space the electrical conductivity was able to be increased by approximately three times the base conductivity through a combination of inorganic substitution and functionalization.

Ab-initio Study of the Electron Mobility in a Functionalized UiO-66 Metal Organic Framework

NASA Astrophysics Data System (ADS)

Musho, Terence D.; Yasin, Alhassan S.

2018-07-01

This study leverages density functional theory accompanied with Boltzmann transport equation approaches to investigate the electronic mobility as a function of inorganic substitution and functionalization in a thermally stable UiO-66 metal-organic framework (MOF). The MOFs investigated are based on Zr-UiO-66 MOF with three functionalization groups of benzene dicarboxylate (BDC), BDC functionalized with an amino group (BDC + NH_2) and a nitro group (BDC + NO_2). The design space of this study is bound by UiO-66(M)-R, [M=Zr, Ti, Hf; R=BDC, BDC+NO_2, BDC+NH_2]. The elastic modulus was not found to vary significantly over the structural modification of the design space for either functionalization or inorganic substitution. However, the electron-phonon scattering potential was found to be controllable by up to 30% through controlled inorganic substitution in the metal clusters of the MOF structure. The highest electron mobility was predicted for a UiO-66(Hf_5Zr_1) achieving a value of approximately 1.4× 10^{-3} cm^2/V s. It was determined that functionalization provides a controlled method of modulating the charge density, while inorganic substitution provides a controlled method of modulating the electronic mobility. Within the proposed design space the electrical conductivity was able to be increased by approximately three times the base conductivity through a combination of inorganic substitution and functionalization.

Effect of segmented electrode length on the performances of Hall thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Chen, Long; Liu, Guangrui; Bian, Xingyu; Yin, Yan

2016-09-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of ionization rate in discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected.

Theory of hydrodynamic transport in fluctuating electronic charge density wave states

NASA Astrophysics Data System (ADS)

Delacrétaz, Luca V.; Goutéraux, Blaise; Hartnoll, Sean A.; Karlsson, Anna

2017-11-01

We describe the collective hydrodynamic motion of an incommensurate charge density wave state in a clean electronic system. Our description simultaneously incorporates the effects of both pinning due to weak disorder and also phase relaxation due to proliferating dislocations. We show that the interplay between these two phenomena has important consequences for charge and momentum transport. For instance, it can lead to metal-insulator transitions. We furthermore identify signatures of fluctuating density waves in frequency and spatially resolved conductivities. Phase disordering is well known to lead to a large viscosity. We derive a precise formula for the phase relaxation rate in terms of the viscosity in the dislocation cores. We thereby determine the viscosity of the superconducting state of BSCCO from the observed melting dynamics of Abrikosov lattices and show that the result is consistent with dissipation into Bogoliubov quasiparticles.

Ionic and electronic transport properties in dense plasmas by orbital-free density functional theory

DOE PAGES

Sjostrom, Travis; Daligault, Jérôme

2015-12-09

We validate the application of our recent orbital-free density functional theory (DFT) approach, [Phys. Rev. Lett. 113, 155006 (2014)], for the calculation of ionic and electronic transport properties of dense plasmas. To this end, we calculate the self-diffusion coefficient, the viscosity coefficient, the electrical and thermal conductivities, and the reflectivity coefficient of hydrogen and aluminum plasmas. Very good agreement is found with orbital-based Kohn-Sham DFT calculations at lower temperatures. Because the computational costs of the method do not increase with temperature, we can produce results at much higher temperatures than is accessible by the Kohn-Sham method. Our results for warmmore » dense aluminum at solid density are inconsistent with the recent experimental results reported by Sperling et al. [Phys. Rev. Lett. 115, 115001 (2015)].« less

Improved battery performance using Pd nanoparticles synthesized on the surface of LiFePO4/C by ultrasound irradiation

NASA Astrophysics Data System (ADS)

Saliman, Muhammad Ali; Okawa, Hirokazu; Takai, Misaki; Ono, Yuki; Kato, Takahiro; Sugawara, Katsuyasu; Sato, Mineo

2016-07-01

LiFePO4 has been attracting interest as a cathode material for Li-ion batteries due to its high energy density, low cost, and eco-friendliness. The electrochemical performance of LiFePO4 is limited because it exhibits low Li-ion diffusivity and low electronic conductivity. Numerous solutions have been considered, such as carbon coating, which is widely known to improve the electronic conductivity of LiFePO4. The deposition of metal nanoparticles (NPs) on the surface of carbon-coated LiFePO4 further enhances the electronic conductivity. In this study, we deposited Pd NPs onto the surface of LiFePO4/C and investigated the resulting electrochemical performance. Sonochemical synthesis was used to prepare the metal NPs; the procedure did not require any surfactants and the reaction was rapid.

Characterization of electronic structure of periodically strained graphene

DOE PAGES

Aslani, Marjan; Garner, C. Michael; Kumar, Suhas; ...

2015-11-03

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands.more » Furthermore, we measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.« less

Inductive Electron Heating Revisited

NASA Astrophysics Data System (ADS)

Tuszewski, M.

1996-11-01

Inductively Coupled Plasmas (ICPs) have been studied for over a century. Recently, ICPs have been rediscovered by the multi-billion dollar semiconductor industry as an important class of high-density, low-pressure plasma sources suitable for the manufacture of next-generation integrated circuits. Present low-pressure ICP development is among the most active areas of plasma research. However, this development remains largely empirical, a prohibitively expensive approach for upcoming 300-mm diameter wafers. Hence, there is an urgent need for basic ICP plasma physics research, including experimental characterization and predictive numerical modeling. Inductive radio frequency (rf) power absorption is fundamental to the ICP electron heating and the resulting plasma transport but remains poorly understood. For example, recent experimental measurements and supporting fluid calculationsfootnote M. Tuszewski, Phys. Rev. Lett. 77 in press (1996) on a commercial deposition tool prototype show that the induced rf magnetic fields in the source can cause an order of magnitude reduction in plasma conductivity and in electron heating power density. In some cases, the rf fields penetrate through the entire volume of the ICP discharges while existing models that neglect the induced rf magnetic fields predict rf absorption in a thin skin layer near the plasma surface. The rf magnetic fields also cause more subtle changes in the plasma density and in the electron temperature spatial distributions. These data will be presented and the role of basic research in the applied world of semiconductor manufacturing will be discussed. ^*This research was conducted under the auspices of the U.S. DOE, supported by funds provided by the University of California for discretionary research by Los Alamos National Laboratory.

Electronic properties of bimetallic metal–organic frameworks (MOFs): Tailoring the density of electronic states through MOF modularity

DOE PAGES

Dolgopolova, Ekaterina A.; Brandt, Amy J.; Ejegbavwo, Otega A.; ...

2017-03-18

The development of porous well-defined hybrid materials (e.g., metal-organic frameworks or MOFs) will add a new dimension to a wide number of applications ranging from supercapacitors and electrodes to 'smart' membranes and thermoelectrics. From this perspective, the understanding and tailoring of the electronic properties of MOFs are key fundamental challenges that could unlock the full potential of these materials. In this work, we focused on the fundamental insights responsible for the electronic properties of three distinct classes of bimetallic systems, M x-yM' y-MOFs, M xM' y- MOFs, and M x(ligand-M' y)-MOFs, in which the second metal (M') incorporation occurs throughmore » (i) metal (M) replacement in the framework nodes (type I), (ii) metal node extension (type II), and (iii) metal coordination to the organic ligand (type III), respectively. We employed microwave conductivity, X-ray photoelectron spectroscopy, diffuse reflectance spectroscopy, powder X-ray diffraction, inductively coupled plasma atomic emission spectroscopy, pressed-pellet conductivity, and theoretical modeling to shed light on the key factors responsible for the tunability of MOF electronic structures. Experimental prescreening of MOFs was performed based on changes in the density of electronic states near the Fermi edge, which was used as a starting point for further selection of suitable MOFs. As a result, we demonstrated that the tailoring of MOF electronic properties could be performed as a function of metal node engineering, framework topology, and/or the presence of unsaturated metal sites while preserving framework porosity and structural integrity. Finally, these studies unveil the possible pathways for transforming the electronic properties of MOFs from insulating to semiconducting, as well as provide a blueprint for the development of hybrid porous materials with desirable electronic structures.« less

3D-hybrid material design with electron/lithium-ion dual-conductivity for high-performance Li-sulfur batteries

NASA Astrophysics Data System (ADS)

Zhao, Yan; Tan, Rui; Yang, Jie; Wang, Kai; Gao, Rongtan; Liu, Dong; Liu, Yidong; Yang, Jinlong; Pan, Feng

2017-02-01

We report a novel 3D-hybrid cathode material with three-dimensional (3D) N-GO/CNT framework to load sulfur (77.6 wt %), and sulfonated polyaniline (SPANI) of coating layer. Used as a cathode material, it possesses a high capacity (1196 mAh g-1@0.3 A g-1@1.6 mg cm-2), excellent charging-discharging rate (680 mAh g-1@7.5 A g-1) and long-life performance (maintaining 71.1% capacity over 450 cycles), which is mainly attributed to the benefits of excellent electronic/Li-ionic dual-conductivity and confinement effect of the 3D-hybrid N-GO/CNT framework coated by self-doping conducting polymer SPANI. Thus, a 3D sulfur cathode modified with electronic/Li-ionic dual-conduction network can significantly enhance the electrochemical performance and stability, and this novel type of material is very promising for commercial applications that require high energy and power density, long life, and excellent abuse tolerance.

Constructing, connecting and soldering nanostructures by environmental electron beam deposition

NASA Astrophysics Data System (ADS)

Mølhave, Kristian; Nørgaard Madsen, Dorte; Dohn, Søren; Bøggild, Peter

2004-08-01

Highly conductive nanoscale deposits with solid gold cores can be made by electron beam deposition in an environmental scanning electron microscope (ESEM), suggesting the method to be used for constructing, connecting and soldering nanostructures. This paper presents a feasibility study for such applications. We identify several issues related to contamination and unwanted deposition, relevant for deposition in both vacuum (EBD) and environmental conditions (EEBD). We study relations between scan rate, deposition rate, angle and line width for three-dimensional structures. Furthermore, we measure the conductivity of deposits containing gold cores, and find these structures to be highly conductive, approaching the conductivity of solid gold and capable of carrying high current densities. Finally, we study the use of the technique for soldering nanostructures such as carbon nanotubes. Based on the presented results we are able to estimate limits for the applicability of the method for the various applications, but also demonstrate that it is a versatile and powerful tool for nanotechnology within these limits.

Spatially Resolved Nano-Scale Characterization of Electronic States in SrTiO3(001) Surfaces by STM/STS

NASA Astrophysics Data System (ADS)

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Hashizume, Tomihiro; Hitosugi, Taro

2012-02-01

We have performed low temperature scanning tunneling microscopy/spectroscopy (STM/STS) measurements on TiO2-terminated SrTiO3(001) thin film surfaces. The conductance map exhibited electronic modulations that were completely different from the surface structure. We also found that the electronic modulations were strongly dependent on temperature and the density of atomic defects associated with oxygen vacancies. These results suggest the existence of strongly correlated two-dimensional electronic states near the SrTiO3 surface, implying the importance of electron correlation at the interfaces of SrTiO3-related heterostructures.

Analysis of Martian ionosphere and solar wind electron gas data from the planar retarding potential analyzer on the Viking spacecraft

NASA Technical Reports Server (NTRS)

Mantas, G. P.; Hanson, W. B.

1987-01-01

Approximate expressions for the electron current collected by a planar retarding potential analyzer (RPA) mounted on a moving, conducting, charged spacecraft are derived. They are utilized for the analysis of electron current data obtained by the RPAs on the Viking spacecraft in the ionosphere of Mars and in the disturbed and undisturbed solar wind near this planet. It is shown that contamination currents by photoelectrons emitted from the spacecraft can be distinguished and removed from the signal. Parameters deduced from the analysis of RPA electron sampling data are the multicomponent electron temperatures, the number densities, and the spacecraft potential.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

PubMed

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

NASA Astrophysics Data System (ADS)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-09-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Modelling relativistic effects in momentum-resolved electron energy loss spectroscopy of graphene

NASA Astrophysics Data System (ADS)

Lyon, K.; Mowbray, D. J.; Miskovic, Z. L.

2018-02-01

We present an analytical model for the electron energy loss through a two-dimensional (2D) layer of graphene, fully taking into account relativistic effects. Using two different models for graphene's 2D conductivity, one a two-fluid hydrodynamic model with an added correction to account for the inter-band electron transitions near the Dirac point in undoped graphene, the other derived from ab initio plane-wave time-dependent density functional theory in the frequency domain (PW-TDDFT-ω) calculations applied on a graphene superlattice, we derive various different expressions for the probability density of energy and momentum transfer from the incident electron to graphene. To further compare with electron energy loss spectroscopy (EELS) experiments that use setups like scanning Transmission Electron Microscopy, we integrated our energy loss functions over a range of wavenumbers, and compared how the choice of range directly affects the shape, position, and relative heights of graphene's π → π* and σ → σ* transition peaks. Comparisons were made with experimental EELS data under different model inputs, revealing again the strong effect that the choice of wavenumber range has on the energy loss.

Plasmonically enhanced electromotive force of narrow bandgap PbS QD-based photovoltaics.

PubMed

Li, Xiaowei; McNaughter, Paul D; O'Brien, Paul; Minamimoto, Hiro; Murakoshi, Kei

2018-05-30

Electromotive force of photovoltaics is a key to define the output power density of photovoltaics. Multiple exciton generation (MEG) exhibited by semiconductor quantum dots (QDs) has great potential to enhance photovoltaic performance owing to the ability to generate more than one electron-hole pairs when absorbing a single photon. However, even in MEG-based photovoltaics, limitation of modifying the electromotive force exists due to the intrinsic electrochemical potential of the conduction band-edges of QDs. Here we report a pronouncedly improved photovoltaic performance by constructing a PbS QD-sensitized electrode that comprises plasmon-active Au nanoparticles embedded in a titanium dioxide thin film. Significant enhancement on electromotive force is characterized by the onset potential of photocurrent generation using MEG-effective PbS QDs with a narrow bandgap energy (Eg = 0.9 eV). By coupling with localized surface plasmon resonance (LSPR), such QDs exhibit improved photoresponses and the highest output power density over the other QDs with larger bandgap energies (Eg = 1.1 and 1.7 eV) under visible light irradiation. The wavelength-dependent onset potential and the output power density suggest effective electron injection owing to the enhanced density of electrons excited by energy overlapping between MEG and LSPR.

Coaxial CoMoO4 nanowire arrays with chemically integrated conductive coating for high-performance flexible all-solid-state asymmetric supercapacitors

NASA Astrophysics Data System (ADS)

Chen, Yaping; Liu, Borui; Liu, Qi; Wang, Jun; Li, Zhanshuang; Jing, Xiaoyan; Liu, Lianhe

2015-09-01

Flexible all-solid-state supercapacitors have offered promising applications as novel energy storage devices based on their merits, such as small size, low cost, light weight and high wearability for high-performance portable electronics. However, one major challenge to make flexible all-solid-state supercapacitors depends on the improvement of electrode materials with higher electrical conductivity properties and longer cycling stability. In this article, we put forward a simple strategy to in situ synthesize 1D CoMoO4 nanowires (NWs), using highly conductive CC and an electrically conductive PPy wrapping layer on CoMoO4 NW arrays for high performance electrode materials. The results show that the CoMoO4/PPy hybrid NW electrode exhibits a high areal specific capacitance of ca. 1.34 F cm-2 at a current density of 2 mA cm-2, which is remarkably better than the corresponding values for a pure CoMoO4 NW electrode of 0.7 F cm-2. An excellent cycling performance of nanocomposites of up to 95.2% (ca. 1.12 F cm-2) is achieved after 2000 cycles compared to pristine CoMoO4 NWs. In addition, we fabricate flexible all-solid-state ASC which can be cycled reversibly in the voltage range of 0-1.7 V, and exhibits a maximum energy density of 104.7 W h kg-1 (3.522 mW h cm-3), demonstrating great potential for practical applications in flexible energy storage electronics.Flexible all-solid-state supercapacitors have offered promising applications as novel energy storage devices based on their merits, such as small size, low cost, light weight and high wearability for high-performance portable electronics. However, one major challenge to make flexible all-solid-state supercapacitors depends on the improvement of electrode materials with higher electrical conductivity properties and longer cycling stability. In this article, we put forward a simple strategy to in situ synthesize 1D CoMoO4 nanowires (NWs), using highly conductive CC and an electrically conductive PPy wrapping layer on CoMoO4 NW arrays for high performance electrode materials. The results show that the CoMoO4/PPy hybrid NW electrode exhibits a high areal specific capacitance of ca. 1.34 F cm-2 at a current density of 2 mA cm-2, which is remarkably better than the corresponding values for a pure CoMoO4 NW electrode of 0.7 F cm-2. An excellent cycling performance of nanocomposites of up to 95.2% (ca. 1.12 F cm-2) is achieved after 2000 cycles compared to pristine CoMoO4 NWs. In addition, we fabricate flexible all-solid-state ASC which can be cycled reversibly in the voltage range of 0-1.7 V, and exhibits a maximum energy density of 104.7 W h kg-1 (3.522 mW h cm-3), demonstrating great potential for practical applications in flexible energy storage electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02961a

Quasiparticle and hybrid density functional methods in defect studies: An application to the nitrogen vacancy in GaN

NASA Astrophysics Data System (ADS)

Lewis, D. K.; Matsubara, M.; Bellotti, E.; Sharifzadeh, S.

2017-12-01

Defects in semiconductors can play a vital role in the performance of electronic devices, with native defects often dominating the electronic properties of the semiconductor. Understanding the relationship between structural defects and electronic function will be central to the design of new high-performance materials. In particular, it is necessary to quantitatively understand the energy and lifetime of electronic states associated with the defect. Here, we apply first-principles density functional theory (DFT) and many-body perturbation theory within the GW approximation to understand the nature and energy of the defect states associated with a charged nitrogen vacancy on the electronic properties of gallium nitride (GaN), as a model of a well-studied and important wide gap semiconductor grown with defects. We systematically investigate the sources of error associated with the GW approximation and the role of the underlying atomic structure on the predicted defect state energies. Additionally, analysis of the computed electronic density of states (DOS) reveals that there is one occupied defect state 0.2 eV below the valence band maximum and three unoccupied defect states at energy of 0.2-0.4 eV above the conduction band minimum, suggesting that this defect in the +1 charge state will not behave as a carrier trap. Furthermore, we compare the character and energy of the defect state obtained from GW and DFT using the HSE approximate density functional and find excellent agreement. This systematic study provides a more complete understanding of how to obtain quantitative defect energy states in bulk semiconductors.

An affordable and accurate conductivity probe for density measurements in stratified flows

NASA Astrophysics Data System (ADS)

Carminati, Marco; Luzzatto-Fegiz, Paolo

2015-11-01

In stratified flow experiments, conductivity (combined with temperature) is often used to measure density. The probes typically used can provide very fine spatial scales, but can be fragile, expensive to replace, and sensitive to environmental noise. A complementary instrument, comprising a low-cost conductivity probe, would prove valuable in a wide range of applications where resolving extremely small spatial scales is not needed. We propose using micro-USB cables as the actual conductivity sensors. By removing the metallic shield from a micro-B connector, 5 gold-plated microelectrodes are exposed and available for 4-wire measurements. These have a cell constant ~550m-1, an intrinsic thermal noise of at most 30pA/Hz1/2, as well as sub-millisecond time response, making them highly suitable for many stratified flow measurements. In addition, we present the design of a custom electronic board (Arduino-based and Matlab-controlled) for simultaneous acquisition from 4 sensors, with resolution (in conductivity, and resulting density) exceeding the performance of typical existing probes. We illustrate the use of our conductivity-measuring system through stratified flow experiments, and describe plans to release simple instructions to construct our complete system for around 200.

Tuning the Electron-Transport and Electron-Accepting Abilities of Dyes through Introduction of Different π-Conjugated Bridges and Acceptors for Dye-Sensitized Solar Cells.

PubMed

Li, Yuanzuo; Sun, Chaofan; Song, Peng; Ma, Fengcai; Yang, Yanhui

2017-02-17

A series of dyes, containing thiophene and thieno[3,2-b]thiophene as π-conjugated bridging units and six kinds of groups as electron acceptors, were designed for dye-sensitized solar cells (DSSCs). The ground- and excited-state properties of the designed dyes were investigated by using density functional theory (DFT) and time-dependent DFT, respectively. Moreover, the parameters affecting the short-circuit current density and open-circuit voltage were calculated to predict the photoelectrical performance of each dye. In addition, the charge difference density was presented through a three-dimensional (3D) real-space analysis method to investigate the electron-injection mechanism in the complexes. Our results show that the longer conjugated bridge would inhibit the intramolecular charge transfer, thereby affecting the photoelectrical properties of DSSCs. Similarly, owing to the lowest chemical hardness, largest electron-accepting ability, dipole moment (μnormal ) and the change in the energy of the TiO 2 conduction band (ΔECB ), the dye with a (E)-3-(4-(benzo[c][1,2,5]thiadiazol-4-yl)phenyl)-2-cyanoacrylic acid (TCA) acceptor group would exhibit the most significant photoelectrical properties among the designed dyes. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Doping effects in InN/GaN short-period quantum well structures-Theoretical studies based on density functional methods

NASA Astrophysics Data System (ADS)

Strak, Pawel; Kempisty, Pawel; Sakowski, Konrad; Krukowski, Stanislaw

2014-09-01

Density functional theory studies were conducted to determine an influence of the carrier concentration on the optical and electronic properties of InN/GaN superlattice system. The oscillator strength values, energy gaps and the band profiles were obtained. The band profiles were found to be strongly affected for technically possible heavy n-type doping while for p-type doping the carrier influence, both screening and band shift, is negligible. Blue shift of the transition energy between conduction band minima and valence band maxima was observed for high concentrations of both type carriers.

Balancing the Electron and Hole Transfer for Efficient Quantum Dot Light-Emitting Diodes by Employing a Versatile Organic Electron-Blocking Layer.

PubMed

Jin, Xiao; Chang, Chun; Zhao, Weifeng; Huang, Shujuan; Gu, Xiaobing; Zhang, Qin; Li, Feng; Zhang, Yubao; Li, Qinghua

2018-05-09

The electron-blocking layer (EBL) is important to balance the charge carrier transfer and achieve highly efficient quantum dot light-emitting diodes (QLEDs). Here, we report the utilization of a soluble tert-butyldimethylsilyl chloride-modified poly( p-phenylene benzobisoxazole) (TBS-PBO) as an EBL for simultaneous good charge carrier transfer balance while maintaining a high current density. We show that the versatile TBS-PBO blocks excess electron injection into the quantum dots (QDs), thus leading to better charge carrier transfer balance. It also restricts the undesired QD-to-EBL electron-transfer process, which preserves the superior emission capabilities of the emitter. As a consequence, the TBS-PBO device delivers an external quantum efficiency (EQE) maximum of 16.7% along with a remarkable current density as high as 139 mA/cm 2 with a brightness of 5484 cd/m 2 . The current density of our device is higher than those of insulator EBL-based devices because of the higher conductivity of the TBS-PBO versus insulator EBL, thus helping achieve high luminance values ranging from 1414 to 20 000 cd/cm 2 with current densities ranging from 44 to 648 mA/cm 2 and EQE > 14%. We believe that these unconventional features of the present TBS-PBO-based QLEDs will expand the wide use of TBS-PBO as buffer layers in other advanced QLED applications.

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

NASA Astrophysics Data System (ADS)

Niu, Wei; Gan, Yulin; Zhang, Yu; Valbjørn Christensen, Dennis; von Soosten, Merlin; Wang, Xuefeng; Xu, Yongbing; Zhang, Rong; Pryds, Nini; Chen, Yunzhong

2017-07-01

The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning of 2DEG at the γ-Al2O3/SrTiO3 interface grown at 650 °C by pulsed laser deposition using a hard mask of LaMnO3. The patterned 2DEG exhibits a critical thickness of 2 unit cells of γ-Al2O3 for the occurrence of interface conductivity, similar to the unpatterned sample. However, its maximum carrier density is found to be approximately 3 × 1013 cm-2, much lower than that of the unpatterned sample (˜1015 cm-2). Remarkably, a high electron mobility of approximately 3600 cm2 V-1 s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ˜7 × 1012 cm-2, which exhibits clear Shubnikov-de Haas quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devices.

Two color interferometric electron density measurement in an axially blown arc

NASA Astrophysics Data System (ADS)

Stoller, Patrick; Carstensen, Jan; Galletti, Bernardo; Doiron, Charles; Sokolov, Alexey; Salzmann, René; Simon, Sandor; Jabs, Philipp

2016-09-01

High voltage circuit breakers protect the power grid by interrupting the current in case of a short circuit. To do so an arc is ignited between two contacts as they separate; transonic gas flow is used to cool and ultimately extinguish the arc at a current-zero crossing of the alternating current. A detailed understanding of the arc interruption process is needed to improve circuit breaker design. The conductivity of the partially ionized gas remaining after the current-zero crossing, a key parameter in determining whether the arc will be interrupted or not, is a function of the electron density. The electron density, in turn, is a function of the detailed dynamics of the arc cooling process, which does not necessarily occur under local thermodynamic equilibrium (LTE) conditions. In this work, we measure the spatially resolved line-integrated index of refraction in a near-current-zero arc stabilized in an axial flow of synthetic air with two nanosecond pulsed lasers at wavelengths of 532 nm and 671 nm. Generating a stable, cylindrically symmetric arc enables us to determine the three-dimensional index of refraction distribution using Abel inversion. Due to the wavelength dependence of the component of the index of refraction related to the free electrons, the information at two different wavelengths can be used to determine the electron density. This information allows us to determine how important it is to take into account non-equilibrium effects for accurate modeling of the physics of decaying arcs.

Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.

PubMed

Vdovin, E E; Mishchenko, A; Greenaway, M T; Zhu, M J; Ghazaryan, D; Misra, A; Cao, Y; Morozov, S V; Makarovsky, O; Fromhold, T M; Patanè, A; Slotman, G J; Katsnelson, M I; Geim, A K; Novoselov, K S; Eaves, L

2016-05-06

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

Quantum molecular dynamics study on the structures and dc conductivity of warm dense silane

NASA Astrophysics Data System (ADS)

Sun, Huayang; Kang, Dongdong; Dai, Jiayu; Zeng, Jiaolong; Yuan, Jianmin

2014-02-01

The ionic and electronic structures of warm dense silane at the densities of 1.795, 2.260, 3.382, and 3.844 g/cm3 have been studied with temperatures from 1000 K to 3 eV using quantum molecular dynamics simulations. At all densities, the structures are melted above 1000 K. The matter states are characterized as polymeric from 1000 to 4000 K and become dense plasma states with further increasing temperature to 1 eV. At two lower densities of 1.795 and 2.260 g/cm3, silane first dissociates and then becomes the polymeric state via a chain state from the initial crystalline structure. At higher densities, however, no dissociation stage was found. These findings can help us understand how the warm dense matter forms. A rise is found for the direct current electric conductivity at T ˜1000 K, indicating the nonmetal-to-metal transition. The conductivity decreases slightly with the increase of temperature, which is due to the more disordered structures at higher temperatures.

First-principles studies of electronic, transport and bulk properties of pyrite FeS2

NASA Astrophysics Data System (ADS)

Banjara, Dipendra; Malozovsky, Yuriy; Franklin, LaShounda; Bagayoko, Diola

2018-02-01

We present results from first principle, local density approximation (LDA) calculations of electronic, transport, and bulk properties of iron pyrite (FeS2). Our non-relativistic computations employed the Ceperley and Alder LDA potential and the linear combination of atomic orbitals (LCAO) formalism. The implementation of the LCAO formalism followed the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). We discuss the electronic energy bands, total and partial densities of states, electron effective masses, and the bulk modulus. Our calculated indirect band gap of 0.959 eV (0.96), using an experimental lattice constant of 5.4166 Å, at room temperature, is in agreement with the measured indirect values, for bulk samples, ranging from 0.84 eV to 1.03 ± 0.05 eV. Our calculated bulk modulus of 147 GPa is practically in agreement with the experimental value of 145 GPa. The calculated, partial densities of states reproduced the splitting of the Fe d bands to constitute the dominant upper most valence and lower most conduction bands, separated by the generally accepted, indirect, experimental band gap of 0.95 eV.

The energy balance and pressure in the solar transition zone for network and active region features

NASA Technical Reports Server (NTRS)

Nicolas, K. R.; Bartoe, J.-D. F.; Brueckner, G. E.; Vanhoosier, M. E.

1979-01-01

The electron pressure and energy balance in the solar transition zone are determined for about 125 network and active region features on the basis of high spectral and spatial resolution extreme ultraviolet spectra. Si III line intensity ratios obtained from the Naval Research Laboratory high-resolution telescope and spectrograph during a rocket flight are used as diagnostics of electron density and pressure for solar features near 3.5 x 10 to the 4th K. Observed ratios are compared with the calculated dependence of the 1301 A/1312 A and 1301 A/1296 A line intensity ratios on electron density, temperature and pressure. Electron densities ranging from 2 x 10 to the 10th/cu cm to 10 to the 12th/cu cm and active region pressures from 3 x 10 to the 15th to 10 to the 16th/cu cm K are obtained. Energy balance calculations reveal the balance of the divergence of the conductive flux and turbulent energy dissipation by radiative energy losses in a plane-parallel homogeneous transition zone (fill factor of 1), and an energy source requirement for a cylindrical zone geometry (fill factor less than 0.04).

Evolution of subband structure with gate-tuning at LaAlO3/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Tang, Lucas; Smink, Sander; van Heeringen, Linde; Geessinck, Jaap; Rana, Abimanuya; Rastogi, Ankur; Maan, Jan Kees; Brinkman, Alexander; Zeitler, Uli; Hilgenkamp, Hans; McCollam, Alix

The outstanding characteristic of LaAlO3/SrTiO3 heterostructures is the formation of a high mobility 2D electron gas (2DEG) at the interface. The additional presence of superconductivity, magnetism and large spin-orbit coupling in these systems suggests that strong correlations play an important role in the electronic properties, in contrast to conventional semiconductor-based 2DEGs. Knowledge of the electronic bandstructure, and the interdependence of conduction electron density and properties is therefore essential for our understanding of these materials. We present new results of low temperature transport measurements in a high mobility LaAlO3/SrTiO3-based heterostructure, in magnetic fields up to 33 T. Shubnikov de-Haas oscillations are observed, revealing several subbands with different carrier densities. By application of an electric field in the back gate geometry, the Fermi level is tuned and thus we are able to map the smooth evolution of the subbands and their properties with carrier density. These results are in good agreement with recent theoretical work, such that we can disentangle the complex band structure, and quantify aspects such as Rashba spin-splitting and the mixing of orbital character.

Floquet theory of microwave absorption by an impurity in the two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Chepelianskii, Alexei D.; Shepelyansky, Dima L.

2018-03-01

We investigate the dynamics of a two-dimensional electron gas (2DEG) under circular polarized microwave radiation in the presence of dilute localized impurities. Inspired by recent developments on Floquet topological insulators we obtain the Floquet wave functions of this system which allow us to predict the microwave absorption and charge density responses of the electron gas; we demonstrate how these properties can be understood from the underlying semiclassical dynamics even for impurities with a size of around a magnetic length. The charge density response takes the form of a rotating charge density vortex around the impurity that can lead to a significant renormalization of the external microwave field which becomes strongly inhomogeneous on the scale of a cyclotron radius around the impurity. We show that this inhomogeneity can suppress the circular polarization dependence which is theoretically expected for microwave induced resistance oscillations but which was not observed in experiments on semiconducting 2DEGs. Our explanation for this so far unexplained polarization independence has close similarities with the Azbel'-Kaner effect in metals where the interaction length between the microwave field and conduction electrons is much smaller than the cyclotron radius due to skin effect generating harmonics of the cyclotron resonance.

Conductive Polymer Synthesis with Single-Crystallinity via a Novel Plasma Polymerization Technique for Gas Sensor Applications.

PubMed

Park, Choon-Sang; Kim, Dong Ha; Shin, Bhum Jae; Kim, Do Yeob; Lee, Hyung-Kun; Tae, Heung-Sik

2016-09-30

This study proposes a new nanostructured conductive polymer synthesis method that can grow the single-crystalline high-density plasma-polymerized nanoparticle structures by enhancing the sufficient nucleation and fragmentation of the pyrrole monomer using a novel atmospheric pressure plasma jet (APPJ) technique. Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FE-SEM) results show that the plasma-polymerized pyrrole (pPPy) nanoparticles have a fast deposition rate of 0.93 µm·min -1 under a room-temperature process and have single-crystalline characteristics with porous properties. In addition, the single-crystalline high-density pPPy nanoparticle structures were successfully synthesized on the glass, plastic, and interdigitated gas sensor electrode substrates using a novel plasma polymerization technique at room temperature. To check the suitability of the active layer for the fabrication of electrochemical toxic gas sensors, the resistance variations of the pPPy nanoparticles grown on the interdigitated gas sensor electrodes were examined by doping with iodine. As a result, the proposed APPJ device could obtain the high-density and ultra-fast single-crystalline pPPy thin films for various gas sensor applications. This work will contribute to the design of highly sensitive gas sensors adopting the novel plasma-polymerized conductive polymer as new active layer.

4P-NPD ultra-thin films as efficient exciton blocking layers in DBP/C70 based organic solar cells

NASA Astrophysics Data System (ADS)

Patil, Bhushan R.; Liu, Yiming; Qamar, Talha; Rubahn, Horst-Günter; Madsen, Morten

2017-09-01

Exciton blocking effects from ultra-thin layers of N,N‧-di-1-naphthalenyl-N,N‧-diphenyl [1,1‧:4‧,1″:4″,1‴-quaterphenyl]-4,4‴-diamine (4P-NPD) were investigated in small molecule-based inverted organic solar cells (OSCs) using tetraphenyldibenzoperiflanthene as the electron donor material and fullerene (C70) as the electron acceptor material. The short-circuit current density (J SC) and power conversion efficiency (PCE) of the optimized OSCs with 0.7 nm thick 4P-NPD were approximately 16% and 24% higher, respectively, compared to reference devices without exciton blocking layers (EBLs). Drift diffusion-based device modeling was conducted to model the full current density-voltage (JV) characteristics and external quantum efficiency spectrum of the OSCs, and photoluminescence measurements were conducted to investigate the exciton blocking effects with increasing thicknesses of the 4P-NPD layer. Importantly, coupled optical and electrical modeling studies of the device behaviors and exciton generation rates and densities in the active layer for different 4P-NPD layer thicknesses were conducted, in order to gain a complete understanding of the observed increase in PCE for 4P-NPD layer thicknesses up to 1 nm, and the observed decrease in PCE for layer thicknesses beyond 1 nm. This work demonstrates a route for guiding the integration of EBLs in OSC devices.

Diffusive charge transport in graphene

NASA Astrophysics Data System (ADS)

Chen, Jianhao

The physical mechanisms limiting the mobility of graphene on SiO 2 are studied and printed graphene devices on a flexible substrate are realized. Intentional addition of charged scattering impurities is used to study the effects of charged impurities. Atomic-scale defects are created by noble-gas ions irradiation to study the effect of unitary scatterers. The results show that charged impurities and atomic-scale defects both lead to conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates. While charged impurities cause intravalley scattering and induce a small change in the minimum conductivity, defects in graphene scatter electrons between the valleys and suppress the minimum conductivity below the metallic limit. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a small resistivity which is linear in temperature and independent of carrier density; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity. Graphene is also made into high mobility transparent and flexible field effect device via the transfer-printing method. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime, and show the promise of graphene as a novel electronic material that have potential applications not only on conventional inorganic substrates, but also on flexible substrates.

Shock-Compressed Hydrogen

NASA Astrophysics Data System (ADS)

Bickham, S. R.; Collins, L. A.; Kress, J. D.; Lenosky, T. J.

1999-06-01

To investigate recent gas-gun and laser experiments on hydrogen at elevated temperatures and high densities, we have performed quantum molecular dynamics simulations using a variety of sophisticated models, ranging from tight-binding(TB) to density functional(DF)(T.J. Lenosky, J.D. Kress, L.A. Collins, and I. Kwon Phys. Rev. B 55), R11907(1997) and references therein.. The TB models have been especially tailored to reproduce experimental findings, such as Diamond-Anvil Cell data, and ab initio calculations, such as H_2, H_3, and H4 potential energy surfaces. The DF calculations have employed the local-density approximation(LDA) as well as generalized gradient corrections(GGA) with large numbers of plane-waves ( ~10^5) that represent a very broad range of excited and continuum electronic states. Good agreement obtains among all these models. The simulations exhibit a rapidly rising electrical conductivity at low temperatures and high pressures in good agreement with the gas-gun results. This conduction property stems from a mobility of the electrons provided principally by the dissociated monomers. The Hugoniot for the conditions of the laser experiment, generated from the TB Equation-of-State, shows a maximum compression of around four instead of the observed six. We also report optical properties of the hydrogen media.

Superconductivity and charge density wave in ZrTe 3–xSe x

DOE PAGES

Zhu, Xiangde; Ning, Wei; Li, Lijun; ...

2016-06-02

Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivity. Here we report that superconductivity emerges upon Se doping in CDW conductor ZrTe 3 when the long range CDW order is gradually suppressed. Superconducting critical temperature T c(x) in ZrTe 3–xSe x (0 ≤ x ≤ 0.1) increases up to 4 K plateau for 0.04 ≤ x ≤ 0.07. Further increase inmore » Se content results in diminishing T c and filametary superconductivity. The CDW modes from Raman spectra are observed in x = 0.04 and 0.1 crystals, where signature of ZrTe 3 CDW order in resistivity vanishes. As a result, the electronic-scattering for high T c crystals is dominated by local CDW fluctuations at high temperatures, the resistivity is linear up to highest measured T = 300 K and contributes to substantial in-plane anisotropy.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaezi, P.; Holland, C.; Thakur, S. C.

The Controlled Shear Decorrelation Experiment (CSDX) linear plasma device provides a unique platform for investigating the underlying physics of self-regulating drift-wave turbulence/zonal flow dynamics. A minimal model of 3D drift-reduced nonlocal cold ion fluid equations which evolves density, vorticity, and electron temperature fluctuations, with proper sheath boundary conditions, is used to simulate dynamics of the turbulence in CSDX and its response to changes in parallel boundary conditions. These simulations are then carried out using the BOUndary Turbulence (BOUT++) framework and use equilibrium electron density and temperature profiles taken from experimental measurements. The results show that density gradient-driven drift-waves are themore » dominant instability in CSDX. However, the choice of insulating or conducting endplate boundary conditions affects the linear growth rates and energy balance of the system due to the absence or addition of Kelvin-Helmholtz modes generated by the sheath-driven equilibrium E × B shear and sheath-driven temperature gradient instability. Moreover, nonlinear simulation results show that the boundary conditions impact the turbulence structure and zonal flow formation, resulting in less broadband (more quasi-coherent) turbulence and weaker zonal flow in conducting boundary condition case. These results are qualitatively consistent with earlier experimental observations.« less

A reversible single-molecule switch based on activated antiaromaticity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Xiaodong; Zang, Yaping; Zhu, Liangliang

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivativemore » that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.« less

A reversible single-molecule switch based on activated antiaromaticity

DOE PAGES

Yin, Xiaodong; Zang, Yaping; Zhu, Liangliang; ...

2017-10-27

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivativemore » that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.« less

Crumpled Nitrogen-Doped Graphene for Supercapacitors with High Gravimetric and Volumetric Performances.

PubMed

Wang, Jie; Ding, Bing; Xu, Yunling; Shen, Laifa; Dou, Hui; Zhang, Xiaogang

2015-10-14

Graphene is considered a promising electrochemical capacitors electrode material due to its high surface area and high electrical conductivity. However, restacking interactions between graphene nanosheets significantly decrease the ion-accessible surface area and impede electronic and ionic transfer. This would, in turn, severely hinder the realization of high energy density. Herein, we report a strategy for preparation of few-layer graphene material with abundant crumples and high-level nitrogen doping. The two-dimensional graphene nanosheets (CNG) feature high ion-available surface area, excellent electronic and ion transfer properties, and high packing density, permitting the CNG electrode to exhibit excellent electrochemical performance. In ionic liquid electrolyte, the CNG electrode exhibits gravimetric and volumetric capacitances of 128 F g(-1) and 98 F cm(-3), respectively, achieving gravimetric and volumetric energy densities of 56 Wh kg(-1) and 43 Wh L(-1). The preparation strategy described here provides a new approach for developing a graphene-based supercapacitor with high gravimetric and volumetric energy densities.

Determining energy balance in the flaring chromosphere from oxygen V line ratios

NASA Astrophysics Data System (ADS)

Graham, D. R.; Fletcher, L.; Labrosse, N.

2015-12-01

Context. The impulsive phase of solar flares is a time of rapid energy deposition and heating in the lower solar atmosphere, leading to changes in the temperature and density structure of the region. Aims: We use an O v density diagnostic formed from the λ192 /λ248 line ratio, provided by the Hinode/EIS instrument, to determine the density of flare footpoint plasma at O v formation temperatures of ~2.5 × 105 K, giving a constraint on the properties of the heated transition region. Methods: Hinode/EIS rasters from 2 small flare events in December 2007 were used. Raster images were co-aligned to identify and establish the footpoint pixels, multiple-component Gaussian line fitting of the spectra was carried out to isolate the density diagnostic pair, and the density was calculated for several footpoint areas. The assumptions of equilibrium ionisation and optically-thin radiation for the O v lines used were assessed and found to be acceptable. For one of the events, properties of the electron distribution were deduced from earlier RHESSI hard X-ray observations. These were used to calculate the plasma heating rate delivered by an electron beam for 2 semi-empirical atmospheres under collisional thick-target assumptions. The radiative loss rate for this plasma was also calculated for comparison with possible energy input mechanisms. Results: Electron number densities of up to 1011.9 cm-3 were measured during the flare impulsive phase using the O v λ192 /λ248 diagnostic ratio. The heating rate delivered by an electron beam was found to exceed the radiative losses at this density, corresponding to a height of 450 km, and when assuming a completely ionised target atmosphere far exceed the losses but at a height of 1450-1600 km. A chromospheric thickness of 70-700 km was found to be required to balance a conductive input to the O v-emitting region with radiative losses. Conclusions: Electron densities have been observed in footpoint sources at transition region temperatures, comparable to previous results but with improved spatial information. The observed densities can be explained by heating of the chromosphere by collisional electrons, with O v formed at heights of 450-1600 km above the photosphere, depending on the atmospheric ionisation fraction.

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu conductance

NASA Astrophysics Data System (ADS)

Hegde, Ganesh; Povolotskyi, Michael; Kubis, Tillmann; Charles, James; Klimeck, Gerhard

2014-03-01

The Semi-Empirical tight binding model developed in Part I Hegde et al. [J. Appl. Phys. 115, 123703 (2014)] is applied to metal transport problems of current relevance in Part II. A systematic study of the effect of quantum confinement, transport orientation, and homogeneous strain on electronic transport properties of Cu is carried out. It is found that quantum confinement from bulk to nanowire boundary conditions leads to significant anisotropy in conductance of Cu along different transport orientations. Compressive homogeneous strain is found to reduce resistivity by increasing the density of conducting modes in Cu. The [110] transport orientation in Cu nanowires is found to be the most favorable for mitigating conductivity degradation since it shows least reduction in conductance with confinement and responds most favorably to compressive strain.

High electric field conduction in low-alkali boroaluminosilicate glass

NASA Astrophysics Data System (ADS)

Dash, Priyanka; Yuan, Mengxue; Gao, Jun; Furman, Eugene; Lanagan, Michael T.

2018-02-01

Electrical conduction in silica-based glasses under a low electric field is dominated by high mobility ions such as sodium, and there is a transition from ionic transport to electronic transport as the electric field exceeds 108 V/m at low temperatures. Electrical conduction under a high electric field was investigated in thin low-alkali boroaluminosilicate glass samples, showing nonlinear conduction with the current density scaling approximately with E1/2, where E is the electric field. In addition, thermally stimulated depolarization current (TSDC) characterization was carried out on room-temperature electrically poled glass samples, and an anomalous discharging current flowing in the same direction as the charging current was observed. High electric field conduction and TSDC results led to the conclusion that Poole-Frenkel based electronic transport occurs in the mobile-cation-depleted region adjacent to the anode, and accounts for the observed anomalous current.

Quantum conductance oscillation in linear monatomic silicon chains

NASA Astrophysics Data System (ADS)

Liu, Fu-Ti; Cheng, Yan; Yang, Fu-Bin; Chen, Xiang-Rong

2014-02-01

The conductance of linear silicon atomic chains with n=1-8 atoms sandwiched between Au electrodes is investigated by using the density functional theory combined with non-equilibrium Green's function. The results show that the conductance oscillates with a period of two atoms as the number of atoms in the chain is varied. We optimize the geometric structure of nanoscale junctions in different distances, and obtain that the average bond-length of silicon atoms in each chain at equilibrium positions is 2.15±0.03 Å. The oscillation of average Si-Si bond-length can explain the conductance oscillation from the geometric structure of atomic chains. We calculate the transmission spectrum of the chains in the equilibrium positions, and explain the conductance oscillation from the electronic structure. The transport channel is mainly contributed by px and py orbital electrons of silicon atoms. The even-odd oscillation is robust under external voltage up to 1.2 V.

Cassini measurements of cold plasma in the ionosphere of Titan.

PubMed

Wahlund, J E; Boström, R; Gustafsson, G; Gurnett, D A; Kurth, W S; Pedersen, A; Averkamp, T F; Hospodarsky, G B; Persoon, A M; Canu, P; Neubauer, F M; Dougherty, M K; Eriksson, A I; Morooka, M W; Gill, R; André, M; Eliasson, L; Müller-Wodarg, I

2005-05-13

The Cassini Radio and Plasma Wave Science (RPWS) Langmuir probe (LP) sensor observed the cold plasma environment around Titan during the first two flybys. The data show that conditions in Saturn's magnetosphere affect the structure and dynamics deep in the ionosphere of Titan. The maximum measured ionospheric electron number density reached 3800 per cubic centimeter near closest approach, and a complex chemistry was indicated. The electron temperature profiles are consistent with electron heat conduction from the hotter Titan wake. The ionospheric escape flux was estimated to be 10(25) ions per second.

Electronic and optical properties of nanocrystalline WO3 thin films studied by optical spectroscopy and density functional calculations

NASA Astrophysics Data System (ADS)

Johansson, Malin B.; Baldissera, Gustavo; Valyukh, Iryna; Persson, Clas; Arwin, Hans; Niklasson, Gunnar A.; Österlund, Lars

2013-05-01

The optical and electronic properties of nanocrystalline WO3 thin films prepared by reactive dc magnetron sputtering at different total pressures (Ptot) were studied by optical spectroscopy and density functional theory (DFT) calculations. Monoclinic films prepared at low Ptot show absorption in the near infrared due to polarons, which is attributed to a strained film structure. Analysis of the optical data yields band-gap energies Eg ≈ 3.1 eV, which increase with increasing Ptot by 0.1 eV, and correlate with the structural modifications of the films. The electronic structures of triclinic δ-WO3, and monoclinic γ- and ε-WO3 were calculated using the Green function with screened Coulomb interaction (GW approach), and the local density approximation. The δ-WO3 and γ-WO3 phases are found to have very similar electronic properties, with weak dispersion of the valence and conduction bands, consistent with a direct band-gap. Analysis of the joint density of states shows that the optical absorption around the band edge is composed of contributions from forbidden transitions (>3 eV) and allowed transitions (>3.8 eV). The calculations show that Eg in ε-WO3 is higher than in the δ-WO3 and γ-WO3 phases, which provides an explanation for the Ptot dependence of the optical data.

Multi-channel transport experiments at Alcator C-Mod and comparison with gyrokinetic simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, A. E.; Howard, N. T.; Greenwald, M.

2013-05-15

Multi-channel transport experiments have been conducted in auxiliary heated (Ion Cyclotron Range of Frequencies) L-mode plasmas at Alcator C-Mod [Marmar and Alcator C-Mod Group, Fusion Sci. Technol. 51(3), 3261 (2007)]. These plasmas provide good diagnostic coverage for measurements of kinetic profiles, impurity transport, and turbulence (electron temperature and density fluctuations). In the experiments, a steady sawtoothing L-mode plasma with 1.2 MW of on-axis RF heating is established and density is scanned by 20%. Measured rotation profiles change from peaked to hollow in shape as density is increased, but electron density and impurity profiles remain peaked. Ion or electron heat fluxesmore » from the two plasmas are the same. The experimental results are compared directly to nonlinear gyrokinetic theory using synthetic diagnostics and the code GYRO [Candy and Waltz, J. Comput. Phys. 186, 545 (2003)]. We find good agreement with experimental ion heat flux, impurity particle transport, and trends in the fluctuation level ratio (T(tilde sign){sub e}/T{sub e})/(ñ{sub e}/n{sub e}), but underprediction of electron heat flux. We find that changes in momentum transport (rotation profiles changing from peaked to hollow) do not correlate with changes in particle transport, and also do not correlate with changes in linear mode dominance, e.g., Ion Temperature Gradient versus Trapped Electron Mode. The new C-Mod results suggest that the drives for momentum transport differ from drives for heat and particle transport. The experimental results are inconsistent with present quasilinear models, and the strong sensitivity of core rotation to density remains unexplained.« less

Structural phase transition and 5f-electrons localization of PuSe explored by ab initio calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui Shouxin, E-mail: shouxincui@yahoo.co; Feng Wenxia; Hu Haiquan

2010-04-15

An investigation into the structural phase transformation, electronic and optical properties of PuSe under high pressure was conducted by using the full potential linearized augmented plane wave plus local orbitals (FP-LAPW+lo) method, in the presence and in the absence of spin-orbit coupling (SOC). Our results demonstrate that there exists a structural phase transition from rocksalt (B 1) structure to CsCl-type (B 2) structure at the transition pressure of 36.3 GPa (without SOC) and 51.3 GPa (with SOC). The electronic density of states (DOS) for PuSe show that the f-electrons of Pu are more localized and concentrated in a narrow peakmore » near the Fermi level, which is consistent with the experimental studies. The band structure shows that B 1-PuSe is metallic. A pseudogap appears around the Fermi level of the total density of states of B 1 phase PuSe, which may contribute to its stability. The calculated reflectivity R(omega) shows agreement with the available experimental results. Furthermore, the absorption spectrum, refractive index, extinction coefficient, energy-loss spectrum and dielectric function were calculated. The origin of the spectral peaks was interpreted based on the electronic structures. - Abstract: Graphical Abstract Legend (TOC Figure): 5f-electrons are more localized by the analysis of the density of states (SOC). The origin spectra peaks was interpreted based on electronic structures.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

NREL developed a modeling and experimental strategy to characterize thermal performance of materials. The technique provides critical data on thermal properties with relevance for electronics packaging applications. Thermal contact resistance and bulk thermal conductivity were characterized for new high-performance materials such as thermoplastics, boron-nitride nanosheets, copper nanowires, and atomically bonded layers. The technique is an important tool for developing designs and materials that enable power electronics packaging with small footprint, high power density, and low cost for numerous applications.

Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting.

PubMed

Wang, Yi-Ting; Kim, Gil-Ho; Huang, C F; Lo, Shun-Tsung; Chen, Wei-Jen; Nicholls, J T; Lin, Li-Hung; Ritchie, D A; Chang, Y H; Liang, C-T; Dolan, B P

2012-10-10

We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting.

Bandgap tuning and enhancement of seebeck coefficient in one dimensional GeSe

NASA Astrophysics Data System (ADS)

Kagdada, Hardik L.; Dabhi, Shweta D.; Jha, Prafulla K.

2018-04-01

The first principles based density functional theory is used for tuning the electronic bandgap and thermoelectric properties of bulk, two dimensional (2D) and one dimensional (1D) GeSe. There is an increase in the bandgap going from bulk to 1D with indirect to direct bandgap transition. There is a dramatic change in Seebeck coefficient (S) for GeSe going from bulk to 1D at 300 K. The electrical conductivity and electronic thermal conductivity are lower for 1D GeSe compared to the bulk GeSe due to larger bandgap in the case of 1D GeSe.

A potential half-Heusler thermoelectric material ScAuSn: A first principle study

NASA Astrophysics Data System (ADS)

Joshi, H.; Rai, D. P.; Thapa, R. K.

2018-04-01

Density Functional Theory along with semi classical Boltzmann transport theory have been applied to study the electronic and thermoelectric property of the Heusler alloy ScAuSn. It has been found that ScAuSn is an indirect band gap semiconductor with a gap of 0.344 eV. The thermoelectric properties such as electrical conductivity (σ), Seebeck coefficient (S), electronic thermal conductivity (κ) etc. are reported as a function of chemical potential in the region ± 2.0 eV, with respect to constant temperature. The calculated ZT value is almost equal to 1, thus making ScAuSn a potential thermoelectric candidate.

Non-modal analysis of the diocotron instability for cylindrical geometry with conducting boundary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailenko, V. V.; Seok Kim, Jin; Jo, Younghyun

2014-05-15

The temporal evolution of the linear diocotron instability of a cylindrical annular plasma column surrounded by a conducting boundary has been investigated by using the methodology of the cylindrical shearing modes. The linear solution of the initial and boundary-value problems is obtained which is valid for any time at which linear effects dominate. The solution reveals that the initial perturbations of the electron density pass through the stage of the non-modal evolution when the perturbation experiences spatio-temporal distortion pertinent to the considered geometry of the electron column. The result is confirmed by a two-dimensional cylindrical particle-in-cell simulation.

Ultrathin nickel hydroxide on carbon coated 3D-porous copper structures for high performance supercapacitors.

PubMed

Kang, Kyeong-Nam; Kim, Ik-Hee; Ramadoss, Ananthakumar; Kim, Sun-I; Yoon, Jong-Chul; Jang, Ji-Hyun

2018-01-03

An ultrathin nickel hydroxide layer electrodeposited on a carbon-coated three-dimensional porous copper structure (3D-C/Cu) is suggested as an additive and binder-free conductive electrode with short electron path distances, large electrochemical active sites, and improved structural stability, for high performance supercapacitors. The 3D-porous copper structure (3D-Cu) provides high electrical conductivity and facilitates electron transport between the Ni(OH) 2 active materials and the current collector of the Ni-plate. A carbon coating was applied to the 3D-Cu to prevent the oxidation of Cu, without degrading the electron transport behavior of the 3D-Cu. The 3D-Ni(OH) 2 /C/Cu exhibited a high specific capacitance of 1860 F g -1 at 1 A g -1 , and good cycling performance, with an 86.5% capacitance retention after 10 000 cycles. When tested in a two-electrode system, an asymmetric supercapacitor exhibited an energy density of 147.9 W h kg -1 and a power density of 37.0 kW kg -1 . These results open a new area of ultrahigh-performance supercapacitors, supported by 3D-Cu electrodes.

General mechanism involved in subwavelength optics of conducting microstructures: charge-oscillation-induced light emission and interference.

PubMed

Huang, Xian-Rong; Peng, Ru-Wen

2010-04-01

Interactions between light and conducting microstructures or nanostructures can result in a variety of novel phenomena, but their underlying mechanisms have not been completely understood. From calculations of surface charge density waves on conducting gratings and by comparing them with classical surface plasmons, we revealed a general yet concrete picture regarding the coupling of light to free electron oscillation on structured conducting surfaces that can lead to oscillating subwavelength charge patterns (i.e., structured surface plasmons). New wavelets emitted from these light sources then destructively interfere to form evanescent waves. This principle, usually combined with other mechanisms, is mainly a geometrical effect that can be universally involved in light scattering from all periodic and non-periodic structures containing free electrons. This picture may provide clear guidelines for developing conductor-based nano-optical devices.

Controlling single-molecule junction conductance by molecular interactions

NASA Astrophysics Data System (ADS)

Kitaguchi, Y.; Habuka, S.; Okuyama, H.; Hatta, S.; Aruga, T.; Frederiksen, T.; Paulsson, M.; Ueba, H.

2015-07-01

For the rational design of single-molecular electronic devices, it is essential to understand environmental effects on the electronic properties of a working molecule. Here we investigate the impact of molecular interactions on the single-molecule conductance by accurately positioning individual molecules on the electrode. To achieve reproducible and precise conductivity measurements, we utilize relatively weak π-bonding between a phenoxy molecule and a STM-tip to form and cleave one contact to the molecule. The anchoring to the other electrode is kept stable using a chalcogen atom with strong bonding to a Cu(110) substrate. These non-destructive measurements permit us to investigate the variation in single-molecule conductance under different but controlled environmental conditions. Combined with density functional theory calculations, we clarify the role of the electrostatic field in the environmental effect that influences the molecular level alignment.

Correlated Electrons in Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Odintsov, Arkadi A.; Yoshioka, Hideo

Single-wall carbon nanotubes are almost ideal systems for the investigation of exotic many-body effects due to non-Fermi liquid behavior of interacting electrons in one dimension. Recent theoretical and experimental results are reviewed with a focus on electron correlations. Starting from a microscopic lattice model we derive an effective phase Hamiltonian for conducting single-wall nanotubes with arbitrary chirality. The parameters of the Hamiltonian show very weak dependence on the chiral angle, which makes the low-energy physics of conducting nanotubes universal. The temperature-dependent resistivity and frequency-dependent optical conductivity of nanotubes with impurities are evaluated within the Luttinger-like model. Localization effects are studied. In particular, we found that intra-valley and inter-valley electron scattering can not coexist at low energies. Low-energy properties of clean nanotubes are studied beyond the Luttinger liquid approximation. The strongest Mott-like electron instability occurs at half filling. In the Mott insulating phase electrons at different atomic sublattices form characteristic bound states. The energy gaps occur in all modes of elementary excitations and estimate at 0.01-0.1 eV. We finally discuss observability of the Mott insulating phase in transport experiments. The accent is made on the charge transfer from external electrodes which results in a deviation of the electron density from half-filling.

Carrier-Specific Femtosecond XUV Transient Absorption of PbI 2 Reveals Ultrafast Nonradiative Recombination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Ming-Fu; Verkamp, Max A.; Leveillee, Joshua

Femtosecond carrier recombination in PbI 2 is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. XUV absorption from 45 eV to 62 eV measures transitions from the iodine 4d core level to the conduction band density of states. Photoexcitation at 400 nm creates separate and distinct transient absorption signals for holes and electrons, separated in energy by the 2.4 eV band gap of the semiconductor. The shape of the conduction band and therefore the XUV absorption spectrum is temperature dependent, and nonradiative recombination converts the initial electronic excitation to thermal excitation within picoseconds. Ultrafastmore » electron diffraction (UED) is used to measure the lattice temperature and confirm the recombination mechanism. Lastly, the XUV and UED results support a 2nd-order recombination model with a rate constant of 2.5x10 -9 cm 3/s.« less

LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system

DOE PAGES

Zou, K.; Ismail-Beigi, Sohrab; Kisslinger, Kim; ...

2015-03-01

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO₃, and a band insulator, KTaO₃. For LaTiO₃/KTaO₃ interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO₃-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm²/V s) of SrTiO₃ at room temperature. By using KTaO₃, we achieve mobilities in LaTiO₃/KTaO₃ interfaces as high as 21 cm²/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO₃. By density functional theory, we attribute the higher mobilitymore » in KTaO₃ 2DEGs to the smaller effective mass for electrons in KTaO₃.« less

Carrier-Specific Femtosecond XUV Transient Absorption of PbI 2 Reveals Ultrafast Nonradiative Recombination

DOE PAGES

Lin, Ming-Fu; Verkamp, Max A.; Leveillee, Joshua; ...

2017-11-30

Femtosecond carrier recombination in PbI 2 is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. XUV absorption from 45 eV to 62 eV measures transitions from the iodine 4d core level to the conduction band density of states. Photoexcitation at 400 nm creates separate and distinct transient absorption signals for holes and electrons, separated in energy by the 2.4 eV band gap of the semiconductor. The shape of the conduction band and therefore the XUV absorption spectrum is temperature dependent, and nonradiative recombination converts the initial electronic excitation to thermal excitation within picoseconds. Ultrafastmore » electron diffraction (UED) is used to measure the lattice temperature and confirm the recombination mechanism. Lastly, the XUV and UED results support a 2nd-order recombination model with a rate constant of 2.5x10 -9 cm 3/s.« less

Conduction in fully ionized liquid metals

NASA Technical Reports Server (NTRS)

Stevenson, D. J.; Ashcroft, N. W.

1973-01-01

Electron transport is considered in high density fully ionized liquid metals. Ionic structure is described in terms of hard-sphere correlation functions and the scattering is determined from self-consistently screened point ions. Applications to the physical properties of the deep interior of Jupiter are briefly considered.

Modeling light-induced charge transfer dynamics across a metal-molecule-metal junction: Bridging classical electrodynamics and quantum dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Zixuan; Ratner, Mark A.; Seideman, Tamar, E-mail: t-seideman@northwestern.edu

2014-12-14

We develop a numerical approach for simulating light-induced charge transport dynamics across a metal-molecule-metal conductance junction. The finite-difference time-domain method is used to simulate the plasmonic response of the metal structures. The Huygens subgridding technique, as adapted to Lorentz media, is used to bridge the vastly disparate length scales of the plasmonic metal electrodes and the molecular system, maintaining accuracy. The charge and current densities calculated with classical electrodynamics are transformed to an electronic wavefunction, which is then propagated through the molecular linker via the Heisenberg equations of motion. We focus mainly on development of the theory and exemplify ourmore » approach by a numerical illustration of a simple system consisting of two silver cylinders bridged by a three-site molecular linker. The electronic subsystem exhibits fascinating light driven dynamics, wherein the charge density oscillates at the driving optical frequency, exhibiting also the natural system timescales, and a resonance phenomenon leads to strong conductance enhancement.« less

Homogeneity and variation of donor doping in Verneuil-grown SrTiO3:Nb single crystals

PubMed Central

Rodenbücher, C.; Luysberg, M.; Schwedt, A.; Havel, V.; Gunkel, F.; Mayer, J.; Waser, R.

2016-01-01

The homogeneity of Verneuil-grown SrTiO3:Nb crystals was investigated. Due to the fast crystal growth process, inhomogeneities in the donor dopant distribution and variation in the dislocation density are expected to occur. In fact, for some crystals optical studies show variations in the density of Ti3+ states on the microscale and a cluster-like surface conductivity was reported in tip-induced resistive switching studies. However, our investigations by TEM, EDX mapping, and 3D atom probe reveal that the Nb donors are distributed in a statistically random manner, indicating that there is clearly no inhomogeneity on the macro-, micro-, and nanoscale in high quality Verneuil-grown crystals. In consequence, the electronic transport in the bulk of donor-doped crystals is homogeneous and it is not significantly channelled by extended defects such as dislocations which justifies using this material, for example, as electronically conducting substrate for epitaxial oxide film growth. PMID:27577508

Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped C60 and ZnPc

NASA Astrophysics Data System (ADS)

Gaul, Christopher; Hutsch, Sebastian; Schwarze, Martin; Schellhammer, Karl Sebastian; Bussolotti, Fabio; Kera, Satoshi; Cuniberti, Gianaurelio; Leo, Karl; Ortmann, Frank

2018-05-01

Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C60 and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ1 between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ1 may provide alternative strategies to optimize the electronic properties of organic semiconductors.

Conductivity Modifications of Graphene by Electron Donative Organic Molecules

NASA Astrophysics Data System (ADS)

Masujima, Hiroaki; Mori, Takehiko; Hayamizu, Yuhei

2017-07-01

Graphene has been studied for the application of transparent electrodes in flexible electrical devices with semiconductor organics. Control of the charge carrier density in graphene is crucial to reduce the contact resistance between graphene and the active layer of organic semiconductor. Chemical doping of graphene is an approach to change the carrier density, where the adsorbed organic molecules donate or accept electrons form graphene. While various acceptor organic molecules have been demonstrated so far, investigation about donor molecules is still poor. In this work, we have investigated doping effect in graphene field-effect transistors functionalized by organic donor molecules such as dibenzotetrathiafulvalene (DBTTF), hexamethyltetrathiafulvalene (HMTTF), 1,5-diaminonaphthalene (DAN), and N, N, N', N'-tetramethyl- p-phenylenediamine (TMPD). Based on conductivity measurements of graphene transistors, the former three molecules do not have any significant effect to graphene transistors. However, TMPD shows effective n-type doping. The doping effect has a correlation with the level of highest occupied molecular orbital (HOMO) of each molecule, where TMPD has the highest HOMO level.

A computational study on tuning the field emission and electronic properties of BN nanocones by impurity atom doping

NASA Astrophysics Data System (ADS)

Ahmadi, S.; Delir Kheirollahi Nezhad, P.; Hosseinian, A.; Vessally, E.

2018-06-01

We have inspected the effect of substituting a boron or nitrogen atom of a BN nanocone (BNNC) by two impurity atoms with lower and higher atomic numbers based on the density functional theory calculations. Our results explain the experimental observations in a molecular level. Orbital and partial density of states analyses show that the doping processes increase the electrical conductivity by creating new states within the gap of BNNC as follows: BeB > ON > CB > CN. The electron emission current from the surface of BNNC is improved after the CB and BeB dopings, and it is decreased by CN and ON dopings. The BeB and CN dopings make the BNNC a p-type semiconductor and the CB and ON dopings make it an n-type one in good agreement with the experimental results. The ON and BeB doping processes are suggested for the field emission current, and electrical conductivity enhancement, respectively.

Evidence for a first-order liquid-liquid transition in high-pressure hydrogen from ab initio simulations

PubMed Central

Morales, Miguel A.; Pierleoni, Carlo; Schwegler, Eric; Ceperley, D. M.

2010-01-01

Using quantum simulation techniques based on either density functional theory or quantum Monte Carlo, we find clear evidence of a first-order transition in liquid hydrogen, between a low conductivity molecular state and a high conductivity atomic state. Using the temperature dependence of the discontinuity in the electronic conductivity, we estimate the critical point of the transition at temperatures near 2,000 K and pressures near 120 GPa. Furthermore, we have determined the melting curve of molecular hydrogen up to pressures of 200 GPa, finding a reentrant melting line. The melting line crosses the metalization line at 700 K and 220 GPa using density functional energetics and at 550 K and 290 GPa using quantum Monte Carlo energetics. PMID:20566888

Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Manoharan, D.; Sundaravel, B.; Lin, I. N.

2016-09-01

Multienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Ω cm)-1 and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/μm, high current density of 5.4 mA/cm2 (@ 2.65 V/μm), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films.

Axisymmetric Eigenmodes of Spheroidal Pure Electron Plasmas

NASA Astrophysics Data System (ADS)

Kawai, Yosuke; Saitoh, Haruhiko; Yoshida, Zensho; Kiwamoto, Yasuhito

2010-11-01

The axisymmetric electrostatic eigenmodes of spheroidal pure electron plasmas have been studied experimentally. It is confirmed that the observed spheroidal plasma attains a theoretically expected equilibrium density distribution, with the exception of a low-density halo distribution surrounding the plasma. When the eigenmode frequency observed for the plasma is compared with the frequency predicted by the dispersion relation derived under ideal conditions wherein the temperature is zero and the boundary is located at an infinite distance from the plasma, it is observed that the absolute value of the observed frequency is systematically higher than the theoretical prediction. Experimental examinations and numerical calculations indicate that the upward shift of the eigenmode frequency cannot be accounted for solely by the finite temperature effect, but is significantly affected by image charges induced on the conducting boundary and the resulting distortion of the density profile from the theoretical expectation.

n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route

PubMed Central

Ran, Fan-Yong; Xiao, Zewen; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

2015-01-01

Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb2+ for Sn2+ converted the majority carrier from hole to electron, and the free electron density ranged from 1012 to 1015 cm−3 with the largest electron mobility of 7.0 cm2/(Vs). The n-type conduction was confirmed further by the position of the Fermi level (EF) based on photoemission spectroscopy and electrical characteristics of pn heterojunctions. Density functional theory calculations reveal that the Pb substitution invokes a geometrical size effect that enlarges the interlayer distance and subsequently reduces the formation energies of Sn and Pb interstitials, which results in the electron doping. PMID:26020855

Spin resolved electronic transport through N@C20 fullerene molecule between Au electrodes: A first principles study

NASA Astrophysics Data System (ADS)

Caliskan, Serkan

2018-05-01

Using first principles study, through Density Functional Theory combined with Non Equilibrium Green's Function Formalism, electronic properties of endohedral N@C20 fullerene molecule joining Au electrodes (Au-N@C20) was addressed in the presence of spin property. The electronic transport behavior across the Au-N@C20 molecular junction was investigated by spin resolved transmission, density of states, molecular orbitals, differential conductance and current-voltage (I-V) characteristics. Spin asymmetric variation was clearly observed in the results due to single N atom encapsulated in the C20 fullerene cage, where the N atom played an essential role in the electronic behavior of Au-N@C20. This N@C20 based molecular bridge, exhibiting a spin dependent I-V variation, revealed a metallic behavior within the bias range from -1 V to 1 V. The induced magnetic moment, spin polarization and other relevant quantities associated with the spin resolved transport were elucidated.

Non-Maxwellian electron distributions by direct laser acceleration in near-critical plasmas

NASA Astrophysics Data System (ADS)

Toncian, T.; Wang, C.; Arefiev, A.; McCary, E.; Meadows, A.; Blakeney, J.; Chester, C.; Roycroft, R.; Fu, H.; Yan, X. Q.; Schreiber, J.; Pomerantz, I.; Quevedo, H.; Dyer, G.; Gaul, E.; Ditmire, T.; Hegelich, B. M.

2015-11-01

The irradiation of few nm thick targets by a finite-contrast high-intensity short-pulse laser results in a strong pre-expansion of these targets at the arrival time of the main pulse. The targets will decompress to near and lower than critical electron densities plasmas extending over lengths of few micrometers. The laser-matter interaction of the main pulse with such a highly localized but inhomogeneous the target leads to the generation of a channel and further self focussing of the laser beam. As measured in a experiment conducted with the GHOST laser system at UT Austin, 2D PIC simulations predict Direct Laser Acceleration of non-Maxwellian electron distribution in the laser propagation direction for such targets. The hereby high density electron bunches have potential applications as injector beams for a further wakefield acceleration stage. This work was supported by NNSA cooperative agreement DE-NA0002008, the DARPA's PULSE program (12-63-PULSE-FP014) and the AFOSR (FA9550-14-1-0045).

Thermally Driven One-Fluid Electron-Proton Solar Wind: Eight-Moment Approximation

NASA Astrophysics Data System (ADS)

Olsen, Espen Lyngdal; Leer, Egil

1996-05-01

In an effort to improve the "classical" solar wind model, we study an eight-moment approximation hydrodynamic solar wind model, in which the full conservation equation for the heat conductive flux is solved together with the conservation equations for mass, momentum, and energy. We consider two different cases: In one model the energy flux needed to drive the solar wind is supplied as heat flux from a hot coronal base, where both the density and temperature are specified. In the other model, the corona is heated. In that model, the coronal base density and temperature are also specified, but the temperature increases outward from the coronal base due to a specified energy flux that is dissipated in the corona. The eight-moment approximation solutions are compared with the results from a "classical" solar wind model in which the collision-dominated gas expression for the heat conductive flux is used. It is shown that the "classical" expression for the heat conductive flux is generally not valid in the solar wind. In collisionless regions of the flow, the eight-moment approximation gives a larger thermalization of the heat conductive flux than the models using the collision-dominated gas approximation for the heat flux, but the heat flux is still larger than the "saturation heat flux." This leads to a breakdown of the electron distribution function, which turns negative in the collisionless region of the flow. By increasing the interaction between the electrons, the heat flux is reduced, and a reasonable shape is obtained on the distribution function. By solving the full set of equations consistent with the eight-moment distribution function for the electrons, we are thus able to draw inferences about the validity of the eight-moment description of the solar wind as well as the validity of the very commonly used collision-dominated gas approximation for the heat conductive flux in the solar wind.

Density functional theory based molecular dynamics study of hydration and electronic properties of aqueous La(3+).

PubMed

Terrier, Cyril; Vitorge, Pierre; Gaigeot, Marie-Pierre; Spezia, Riccardo; Vuilleumier, Rodolphe

2010-07-28

Structural and electronic properties of La(3+) immersed in bulk water have been assessed by means of density functional theory (DFT)-based Car-Parrinello molecular dynamics (CPMD) simulations. Correct structural properties, i.e., La(III)-water distances and La(III) coordination number, can be obtained within the framework of Car-Parrinello simulations providing that both the La pseudopotential and conditions of the dynamics (fictitious mass and time step) are carefully set up. DFT-MD explicitly treats electronic densities and is shown here to provide a theoretical justification to the necessity of including polarization when studying highly charged cations such as lanthanoids(III) with classical MD. La(3+) was found to strongly polarize the water molecules located in the first shell, giving rise to dipole moments about 0.5 D larger than those of bulk water molecules. Finally, analyzing Kohn-Sham orbitals, we found La(3+) empty 4f orbitals extremely compact and to a great extent uncoupled from the water conduction band, while the 5d empty orbitals exhibit mixing with unoccupied states of water.

Self-absorption characteristics of measured laser-induced plasma line shapes

NASA Astrophysics Data System (ADS)

Parigger, C. G.; Surmick, D. M.; Gautam, G.

2017-02-01

The determination of electron density and temperature is reported from line-of-sight measurements of laser-induced plasma. Experiments are conducted in standard ambient temperature and pressure air and in a cell containing ultra-high-pure hydrogen slightly above atmospheric pressure. Spectra of the hydrogen Balmer series lines can be measured in laboratory air due to residual moisture following optical breakdown generated with 13 to 14 nanosecond, pulsed Nd:YAG laser radiation. Comparisons with spectra obtained in hydrogen gas yields Abel-inverted line shape appearances that indicate occurrence of self-absorption. The electron density and temperature distributions along the line of sight show near-spherical rings, expanding at or near the speed of sound in the hydrogen gas experiments. The temperatures in the hydrogen studies are obtained using Balmer series alpha, beta, gamma profiles. Over and above the application of empirical formulae to derive the electron density from hydrogen alpha width and shift, and from hydrogen beta width and peak-separation, so-called escape factors and the use of a doubling mirror are discussed.

A Density Functional Theory Study of Codoping Characteristics of Sulfur with Alkaline Earth in Delafossite CuAlO2

NASA Astrophysics Data System (ADS)

Liu, Qi-Jun; Qin, Han; Liu, Zheng-Tang

2016-04-01

The structural, electronic properties and formation energies of sulfur and alkaline earth codoped delafossite CuAlO2 have been investigated using the first-principles density functional theory calculations. Our results reveal that the volume of codoping systems increases with the increasing atomic radius of metal atoms. The formation energies under different growth conditions have been calculated, showing that the codoping systems are formed easily under O-rich growth conditions. Electronic band structures and density of states have been obtained. The decreased bandgaps, enhanced covalence and appearance of electron acceptors after codoping are all good for p-type conductivity. Supported by the National Natural Science Foundation of China under Grant Nos. 11347199, 51402244, and 11547311, the Specialized Research Fund for Doctoral Program of Higher Education of China under Grant No. 20130184120028, the Fundamental Research Fund for the Central Universities, China under Grant Nos. 2682014CX084, 2682014ZT30, and 2682014ZT31, and the fund of the State Key Laboratory of Solidification Processing in NWPU under Grant No. SKLSP201511

Physically separating printed circuit boards with a resilient, conductive contact

NASA Technical Reports Server (NTRS)

Baker, John D. (Inventor); Montalvo, Alberto (Inventor)

1999-01-01

A multi-board module provides high density electronic packaging in which multiple printed circuit boards are stacked. Electrical power, or signals, are conducted between the boards through a resilient contact. One end of the contact is located at a via in the lower circuit board and soldered to a pad near the via. The top surface of the contact rests against a via of the facing printed circuit board.

CdS-metal contact at higher current densities.

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Boeer, K. W.; Dussel, G. A.

1973-01-01

An investigation is conducted concerning the mechanisms by which a steady flow of current proceeds through the contact when an external voltage is applied. The main characteristics of current mechanisms are examined, giving attention to photoemission from the cathode, thermionic emission, minority-carrier extraction, and the tunneling of electrons. A high-field domain analysis is conducted together with experimental studies. Particular attention is given to the range in which tunneling predominates.

P-type conductivity in annealed strontium titanate

DOE PAGES

Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

2015-12-17

In this study, Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO 3, or STO) samples that were annealed at 1200°C. Room temperature mobilities above 100 cm 2/Vs were measured, an order of magnitude higher than those for electrons (5-10 cm 2/Vs). Average hole densities were in the 10 9-10 10 cm -3 range, consistent with a deep acceptor.

Mechanisms of transport and electron transfer at conductive polymer/liquid interfaces

NASA Astrophysics Data System (ADS)

Ratcliff, Erin

Organic semiconductors (OSCs) have incredible prospects for next-generation, flexible electronic devices including bioelectronics, thermoelectrics, opto-electronics, and energy storage and conversion devices. Yet many fundamental challenges still exist. First, solution processing prohibits definitive control over microstructure, which is fundamental for controlling electrical, ionic, and thermal transport properties. Second, OSCs generally suffer from poor electrical conductivities due to a combination of low carriers and low mobility. Third, polymeric semiconductors have potential-dependent, dynamically evolving electronic and chemical states, leading to complex interfacial charge transfer properties in contact with liquids. This talk will focus on the use of alternative synthetic strategies of oxidative chemical vapor deposition and electrochemical deposition to control physical, electronic, and chemical structure. We couple our synthetic efforts with energy-, time-, and spatially resolved spectroelectrochemical and microscopy techniques to understand the critical interfacial chemistry-microstructure-property relationships: first at the macroscale, and then moving towards the nanoscale. In particular, approaches to better understand electron transfer events at polymer/liquid interfaces as a function of: 1.) chemical composition; 2.) electronic density of states (DOS); and 3.) crystallinity and microstructure will be discussed.

THE LAUNCHING OF COLD CLOUDS BY GALAXY OUTFLOWS. II. THE ROLE OF THERMAL CONDUCTION

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brüggen, Marcus; Scannapieco, Evan

2016-05-01

We explore the impact of electron thermal conduction on the evolution of radiatively cooled cold clouds embedded in flows of hot and fast material as it occurs in outflowing galaxies. Performing a parameter study of three-dimensional adaptive mesh refinement hydrodynamical simulations, we show that electron thermal conduction causes cold clouds to evaporate, but it can also extend their lifetimes by compressing them into dense filaments. We distinguish between low column-density clouds, which are disrupted on very short times, and high-column density clouds with much longer disruption times that are set by a balance between impinging thermal energy and evaporation. Wemore » provide fits to the cloud lifetimes and velocities that can be used in galaxy-scale simulations of outflows in which the evolution of individual clouds cannot be modeled with the required resolution. Moreover, we show that the clouds are only accelerated to a small fraction of the ambient velocity because compression by evaporation causes the clouds to present a small cross-section to the ambient flow. This means that either magnetic fields must suppress thermal conduction, or that the cold clouds observed in galaxy outflows are not formed of cold material carried out from the galaxy.« less

Investigating the Martian Ionospheric Conductivity Using MAVEN Key Parameter Data

NASA Astrophysics Data System (ADS)

Aleryani, O.; Raftery, C. L.; Fillingim, M. O.; Fogle, A. L.; Dunn, P.; McFadden, J. P.; Connerney, J. E. P.; Mahaffy, P. R.; Ergun, R. E.; Andersson, L.

2015-12-01

Since the Viking orbiters and landers in 1976, the Martian atmospheric composition has scarcely been investigated. New data from the Mars Atmosphere and Volatile EvolutioN (MAVEN) mission, launched in 2013, allows for a thorough study of the electrically conductive nature of the Martian ionosphere. Determinations of the electrical conductivity will be made using in-situ atmospheric and ionospheric measurements, rather than scientific models for the first time. The objective of this project is to calculate the conductivity of the Martian atmosphere, whenever possible, throughout the trajectory of the MAVEN spacecraft. MAVEN instrumentation used includes the Neutral Gas and Ion Mass Spectrometer (NGIMS) for neutral species density, the Suprathermal and Thermal Ion Compositions (STATIC) for ion composition, temperature and density, the Magnetometer (MAG) for the magnetic field strength and the Langmuir Probe and Waves (LPW) for electron temperature and density. MAVEN key parameter data are used for these calculations. We compare our results with previous, model-based estimates of the conductivity. These results will allow us to quantify the flow of atmospheric electric currents which can be analyzed further for a deeper understanding of the Martian ionospheric electrodynamics, bringing us closer to understanding the mystery of the loss of the Martian atmosphere.

Electrically and Thermally Conductive Low Density Polyethylene-Based Nanocomposites Reinforced by MWCNT or Hybrid MWCNT/Graphene Nanoplatelets with Improved Thermo-Oxidative Stability.

PubMed

Paszkiewicz, Sandra; Szymczyk, Anna; Pawlikowska, Daria; Subocz, Jan; Zenker, Marek; Masztak, Roman

2018-04-22

In this paper, the electrical and thermal conductivity and morphological behavior of low density polyethylene (LDPE)/multi-walled carbon nanotubes (MWCNTs) + graphene nanoplatelets (GNPs) hybrid nanocomposites (HNCs) have been studied. The distribution of MWCNTs and the hybrid of MWCNTs/GNPs within the polymer matrix has been investigated with scanning electron microscopy (SEM). The results showed that the thermal and electrical conductivity of the LDPE-based nanocomposites increased along with the increasing content of carbon nanofillers. However, one could observe greater improvement in the thermal and electrical conductivity when only MWCNTs have been incorporated. Moreover, the improvement in tensile properties and thermal stability has been observed when carbon nanofillers have been mixed with LDPE. At the same time, the increasing content of MWCNTs and MWCNTs/GNPs caused an increase in the melt viscosity with only little effect on phase transition temperatures.

Electrically and Thermally Conductive Low Density Polyethylene-Based Nanocomposites Reinforced by MWCNT or Hybrid MWCNT/Graphene Nanoplatelets with Improved Thermo-Oxidative Stability

PubMed Central

Pawlikowska, Daria; Subocz, Jan; Zenker, Marek; Masztak, Roman

2018-01-01

In this paper, the electrical and thermal conductivity and morphological behavior of low density polyethylene (LDPE)/multi-walled carbon nanotubes (MWCNTs) + graphene nanoplatelets (GNPs) hybrid nanocomposites (HNCs) have been studied. The distribution of MWCNTs and the hybrid of MWCNTs/GNPs within the polymer matrix has been investigated with scanning electron microscopy (SEM). The results showed that the thermal and electrical conductivity of the LDPE-based nanocomposites increased along with the increasing content of carbon nanofillers. However, one could observe greater improvement in the thermal and electrical conductivity when only MWCNTs have been incorporated. Moreover, the improvement in tensile properties and thermal stability has been observed when carbon nanofillers have been mixed with LDPE. At the same time, the increasing content of MWCNTs and MWCNTs/GNPs caused an increase in the melt viscosity with only little effect on phase transition temperatures. PMID:29690551

High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu_{0.02}Bi_{2}Se_{3}.

PubMed

Wu, Liang; Tse, Wang-Kong; Brahlek, M; Morris, C M; Aguilar, R Valdés; Koirala, N; Oh, S; Armitage, N P

2015-11-20

We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.

Investigation of the electronic, magnetic and optical properties of {\\sf Co}_{\\sf 2}{\\sf CrZ} (Z = Si, Ge) under pressure—a density functional theory study

NASA Astrophysics Data System (ADS)

Seema, K.; Kumar, Ranjan

2014-01-01

The structural, electronic, magnetic and optical properties of Co-based Heusler compounds, Co2CrZ (Z = Si, Ge), are studied using first-principle density functional theory. The calculations are performed within the generalized gradient approximation. Our calculated structural parameters at 0 GPa agree well with previous available results. The calculated magnetic moment agrees well with the Slater-Pauling (SP) rule. We have studied the effect of pressure on the electronic and magnetic properties of Co2CrSi and Co2CrGe. With an increase in applied pressure, a decrease in cell volume is observed. Under application of external pressure, the valence band and conduction band are shifted downward which leads to a modification of electronic structure. There exists an indirect band gap along Γ-X for both the alloys. Co2CrSi and Co2CrGe retain 100% spin polarization up to 60 and 50 GPa, respectively. The local magnetic moments of the Co and Si (Ge) atoms increase with an increase in pressure whereas the local magnetic moment of the Cr atom decreases. In addition, the optical properties such as dielectric function, absorption spectra, optical conductivity and energy loss function of these alloys have also been investigated. To our knowledge this is the first theoretical prediction of the pressure dependence of the structural, electronic, magnetic and optical properties of Co2CrSi and Co2CrGe.

Electron Beam Charge Diagnostics for Laser Plasma Accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakamura, Kei; Gonsalves, Anthony; Lin, Chen

2011-06-27

A comprehensive study of charge diagnostics is conducted to verify their validity for measuring electron beams produced by laser plasma accelerators (LPAs). First, a scintillating screen (Lanex) was extensively studied using subnanosecond electron beams from the Advanced Light Source booster synchrotron, at the Lawrence Berkeley National Laboratory. The Lanex was cross calibrated with an integrating current transformer (ICT) for up to the electron energy of 1.5 GeV, and the linear response of the screen was confirmed for charge density and intensity up to 160 pC/mm{sup 2} and 0.4 pC/(ps mm{sup 2}), respectively. After the radio-frequency accelerator based cross calibration, amore » series of measurements was conducted using electron beams from an LPA. Cross calibrations were carried out using an activation-based measurement that is immune to electromagnetic pulse noise, ICT, and Lanex. The diagnostics agreed within {+-}8%, showing that they all can provide accurate charge measurements for LPAs.« less

Correlation between electronic structure and electron conductivity in MoX2 (X = S, Se, and Te)

NASA Astrophysics Data System (ADS)

Muzakir, Saifful Kamaluddin

2017-12-01

Layered structure molybdenum dichalcogenides, MoX2 (X = S, Se, and Te) are in focus as reversible charge storage electrode for pseudocapacitor applications. Correlation between number of layer and bandgap of the materials has been established by previous researchers. The correlation would reveal a connection between the bandgap and charge storage properties i.e., amount of charges that could be stored, and speed of storage or dissociation. In this work, fundamental parameters viz., (i) size-offset between a monolayer and exciton Bohr radius of MoX2 and (ii) ground and excited state electron density have been studied. We have identified realistic monolayer models of MoX2 using quantum chemical calculations which explain a correlation between size-offset and charge storage properties. We conclude that as the size-offset decreases, the higher possibility of wave functions overlap between the excited state, and ground state electrons; therefore the higher the electron mobility, and conductivity of the MoX2 would be.

Electronic structure and weak itinerant magnetism in metallic Y 2 Ni 7

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, David J.

2015-11-03

We describe a density functional study of the electronic structure and magnetism of Y₂Ni₇. The results show itinerant magnetism very similar to that in the weak itinerant ferromagnet Ni₃Al. The electropositive Y atoms in Y₂Ni₇ donate charge to the Ni host mostly in the form of s electrons. The non-spin-polarized state shows a high density of states at the Fermi level, N (E F), due to flat bands. This leads to a ferromagnetic instability. However, there are also several much more dispersive bands crossing E(F), which should promote the conductivity. Spin fluctuation effects appear to be comparable to or weakermore » than Ni₃Al, based on comparison with experimental data. Y₂Ni₇ provides a uniaxial analog to cubic Ni₃Al, for studying weak itinerant ferromagnetism, suggesting detailed measurements of its low temperature physical properties and spin fluctuations, as well as experiments under pressure.« less

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

NASA Astrophysics Data System (ADS)

Colleoni, Davide; Pourtois, Geoffrey; Pasquarello, Alfredo

2017-03-01

In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In0.53Ga0.47As/Al2O3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al2O3 and to be able to capture two electrons in a dangling bond upon breaking bonds with neighboring O atoms. Through a band alignment based on hybrid functional calculations, it is inferred that the corresponding defect levels lie at ˜1 eV above the conduction band minimum of In0.53Ga0.47As, in agreement with measured defect densities. These results support the technological importance of avoiding cation diffusion into the oxide layer.

Electron temperature and density probe for small aeronomy satellites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oyama, K.-I.; Institute of Space and Plasma Sciences, National Cheng Kung University, Tainan, Taiwan; International Center for Space Weather Study and education, Kyushu University, Fukuoka

2015-08-15

A compact and low power consumption instrument for measuring the electron density and temperature in the ionosphere has been developed by modifying the previously developed Electron Temperature Probe (ETP). A circuit block which controls frequency of the sinusoidal signal is added to the ETP so that the instrument can measure both T{sub e} in low frequency mode and N{sub e} in high frequency mode from the floating potential shift of the electrode. The floating potential shift shows a minimum at the upper hybrid resonance frequency (f{sub UHR}). The instrument which is named “TeNeP” can be used for tiny satellites whichmore » do not have enough conductive surface area for conventional DC Langmuir probe measurements. The instrument also eliminates the serious problems associated with the contamination of satellite surface as well as the sensor electrode.« less

Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Jaewook

2016-11-01

In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

Influences of S, Se, Te and Po substitutions on structural, electronic and optical properties of hexagonal CuAlO2 using GGA and B3LYP functionals.

PubMed

Liu, Qi-Jun; Jiao, Zhen; Liu, Fu-Sheng; Liu, Zheng-Tang

2016-06-07

The effects of X-doping (X = S, Se, Te and Po) on the structural, electronic and optical properties of hexagonal CuAlO2 were studied using first-principles density functional theory. The calculated results showed the obtained lattice constants to increase with increasing atomic number, and the X-doping to be energetically more favorable under Al-rich conditions. The calculated electronic properties showed decreased bandgaps with increasing atomic number, which was due to the better covalent hybridizations after sulfuration doping. The enhanced covalency was further confirmed by calculating the Mulliken atomic populations and bond populations. The density of states indicated the increase of the contribution to antibonding from the X-p states to be a benefit for p-type conductivity. Moreover, the X-doping induced a red shift of the absorption edge.

Thermoelectric power of PrMg3

NASA Astrophysics Data System (ADS)

Isikawa, Yosikazu; Somiya, Kazuya; Koyanagi, Huruto; Mizushima, Toshio; Kuwai, Tomohiko; Tayama, Takashi

2010-01-01

PrMg3 is supposed to be one of the strongly correlated electron systems originated from the hybridization between the Pr 4f and conduction electrons, because the gigantic electronic specific heat coefficient C/T was observed at low temperatures. However, a typical behaviour of - ln T dependence was not observed in the temperature dependence of the electrical resistivity. The thermoelectric power S is a powerful tool to investigate the density of states at the Fermi energy. We measured carefully the thermoelectric power of PrMg3 in the temperature range between 2 and 300 K. S is extremely small, ranged within ±1 μV/K over the whole temperature. The value of S/T at low temperature limit was also significantly smaller than expected from the specific heat results. We therefore conclude that the density of state at the Fermi level is not enhanced in PrMg3.

Plasma processes in inert gas thrusters

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Robinson, R. S.

1979-01-01

Inert gas thrusters, particularly with large diameters, have continued to be of interest for space propulsion applications. Two plasma processes are treated in this study: electron diffusion across magnetic fields and double ion production in inert-gas thrusters. A model is developed to describe electron diffusion across a magnetic field that is driven by both density and potential gradients, with Bohm diffusion used to predict the diffusion rate. This model has applications to conduction across magnetic fields inside a discharge chamber, as well as through a magnetic baffle region used to isolate a hollow cathode from the main chamber. A theory for double ion production is presented, which is not as complete as the electron diffusion theory described, but it should be a useful tool for predicting double ion sputter erosion. Correlations are developed that may be used, without experimental data, to predict double ion densities for the design of new and especially larger ion thrusters.

Density functional theory and experimental study of the electronic structure and transport properties of La, V, Nb, and Ta doped SrTiO3

NASA Astrophysics Data System (ADS)

Baniecki, J. D.; Ishii, M.; Aso, H.; Kurihara, K.; Ricinschi, Dan

2013-01-01

The electronic structure and transport properties of donor doped SrTiO3 are studied using density functional theory with spin-orbit coupling and conductivity, Hall, and Seebeck effect measurements over a wide temperature range (100 K to 600 K). Split-off energies ΔSO are tunable through the dopant SO interaction strength and concentration varying from 28.1 meV for pure STO to 70.93 meV for SrTi0.5Nb0.5O3. At lower carrier concentrations and temperatures, SO coupling has a marked effect on both the filling dependence of the density-of-states mass as well as the temperature dependence of the Seebeck coefficient, with quantitative theoretical predictions based on DFT calculations that include the SO interaction in closer agreement to the experimental data. Moreover, the results suggest that the predictive power of the current theory is not unlimited, with less accuracy for the calculated S predicting the magnitude of the experimental S data at lower dopant concentrations than for degenerately doped systems. A concentration dependent mass enhancement of ˜2-5, relative to the density-of-states mass in the local density approximation, possibly due to the influence of electronic screening of the electron-phonon interaction, would bring the theoretical S in accord with the experimental S data. This additional carrier-dependent enhancement mechanism for S may give an additional degree of freedom in terms of designing new higher efficiency thermoelectric energy materials.

Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth

NASA Astrophysics Data System (ADS)

van der Torren, A. J. H.; Liao, Z.; Xu, C.; Gauquelin, N.; Yin, C.; Aarts, J.; van der Molen, S. J.

2017-12-01

The two-dimensional electron gas occurring between the band insulators SrTiO3 and LaAlO3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density and due to ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO3 layer at the growth temperature (around 800°C) in oxygen (pressure around 5 ×10-5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO2-rich surface and a conducting interface or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.

Fabrication of high-performance supercapacitors based on transversely oriented carbon nanotubes

NASA Astrophysics Data System (ADS)

Markoulidis, F.; Lei, C.; Lekakou, C.

2013-04-01

High-performance supercapacitors with organic electrolyte 1 M TEABF4 (tetraethyl ammonium tetrafluoroborate) in PC (propylene carbonate) were fabricated and tested, based on multiwall carbon nanotubes (MWNTs) deposited by electrophoresis on three types of alternative substrates: aluminium foil, ITO (indium tin oxide) coated PET (polyethylene terephthalate) film and PET film. In all cases, SEM (scanning electron microscopy) and STEM (scanning transmission electron microscopy) micrographs demonstrated that protruding, transversely oriented MWNT structures were formed, which should increase the transverse conductivity of these MWNT electrodes. The best supercapacitor cell of MWNT electrodes deposited on aluminium foil displayed good transverse orientation of the MWNT structures as well as an in-plane MWNT network at the feet of the protruding structures, which ensured good in-plane conductivity. Capacitor cells with MWNT electrodes deposited either on ITO-coated PET film or on PET film demonstrated lower but still very good performance due to the high density of transversely oriented MWNT structures (good transverse conductivity) but some in-plane inhomogeneities. Capacitor cells with drop-printed MWNTs on aluminium foil, without any transverse orientation, had 16-30 times lower specific capacitance and 5-40 times lower power density than the capacitor cells with the electrophoretically deposited MWNT electrodes.

Ultrahigh-Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron-Correlated Oxides.

PubMed

Lang, Xing-You; Liu, Bo-Tian; Shi, Xiang-Mei; Li, Ying-Qi; Wen, Zi; Jiang, Qing

2016-05-01

Nanostructured transition-metal oxides can store high-density energy in fast surface redox reactions, but their poor conductivity causes remarkable reductions in the energy storage of most pseudocapacitors at high power delivery (fast charge/discharge rates). Here it is shown that electron-correlated oxide hybrid electrodes made of nanocrystalline vanadium sesquioxide and manganese dioxide with 3D and bicontinuous nanoporous architecture (NP V 2 O 3 /MnO 2 ) have enhanced conductivity because of metallization of electron-correlated V 2 O 3 skeleton via insulator-to-metal transition. The conductive V 2 O 3 skeleton at ambient temperature enables fast electron and ion transports in the entire electrode and facilitates charge transfer at abundant V 2 O 3 /MnO 2 interface. These merits significantly improve the pseudocapacitive behavior and rate capability of the constituent MnO 2 . Symmetric pseudocapacitors assembled with binder-free NP V 2 O 3 /MnO 2 electrodes deliver ultrahigh electrical powers (up to ≈422 W cm 23 ) while maintaining the high volumetric energy of thin-film lithium battery with excellent stability.

Promotion of acceptor formation in SnO2 nanowires by e-beam bombardment and impacts to sensor application

PubMed Central

Sub Kim, Sang; Gil Na, Han; Woo Kim, Hyoun; Kulish, Vadym; Wu, Ping

2015-01-01

We have realized a p-type-like conduction in initially n-type SnO2 nanowires grown using a vapor-liquid-solid method. The transition was achieved by irradiating n-type SnO2 nanowires with a high-energy electron beam, without intentional chemical doping. The nanowires were irradiated at doses of 50 and 150 kGy, and were then used to fabricate NO2 gas sensors, which exhibited n-type and p-type conductivities, respectively. The tuneability of the conduction behavior is assumed to be governed by the formation of tin vacancies (under high-energy electron beam irradiation), because it is the only possible acceptor, excluding all possible defects via density functional theory (DFT) calculations. The effect of external electric fields on the defect stability was studied using DFT calculations. The measured NO2 sensing dynamics, including response and recovery times, were well represented by the electron-hole compensation mechanism from standard electron-hole gas equilibrium statistics. This study elucidates the charge-transport characteristics of bipolar semiconductors that underlie surface chemical reactions. The principles derived will guide the development of future SnO2-based electronic and electrochemical devices. PMID:26030815

Electronic transport in gadolinium atomic-size contacts

NASA Astrophysics Data System (ADS)

Olivera, B.; Salgado, C.; Lado, J. L.; Karimi, A.; Henkel, V.; Scheer, E.; Fernández-Rossier, J.; Palacios, J. J.; Untiedt, C.

2017-02-01

We report on the fabrication, transport measurements, and density functional theory (DFT) calculations of atomic-size contacts made of gadolinium (Gd). Gd is known to have local moments mainly associated with f electrons. These coexist with itinerant s and d bands that account for its metallic character. Here we explore whether and how the local moments influence electronic transport properties at the atomic scale. Using both scanning tunneling microscope and lithographic mechanically controllable break junction techniques under cryogenic conditions, we study the conductance of Gd when only few atoms form the junction between bulk electrodes made of the very same material. Thousands of measurements show that Gd has an average lowest conductance, attributed to single-atom contact, below 2/e2 h . Our DFT calculations for monostrand chains anticipate that the f bands are fully spin polarized and insulating and that the conduction may be dominated by s , p , and d bands. We also analyze the electronic transport for model nanocontacts using the nonequilibrium Green's function formalism in combination with DFT. We obtain an overall good agreement with the experimental results for zero bias and show that the contribution to the electronic transport from the f channels is negligible and that from the d channels is marginal.

Theory of interparticle correlations in dense, high-temperature plasmas. V - Electric and thermal conductivities

NASA Technical Reports Server (NTRS)

Ichimaru, S.; Tanaka, S.

1985-01-01

Ichimaru et al. (1985) have developed a general theory in which the interparticle correlations in dense, high-temperature multicomponent plasmas were formulated systematically over a wide range of plasma parameters. The present paper is concerned with an extension of this theory, taking into account the problems of the electronic transport in such high-density plasmas. It is shown that the resulting theory is capable of describing the transport coefficients accurately over a wide range of the density and temperature parameters. Attention is given to electric and thermal conductivities, generalized Coulomb logarithms, a comparison of the considered theory with other theories, and a comparison of the theory with experimental results.

MXene-Based Electrode with Enhanced Pseudocapacitance and Volumetric Capacity for Power-Type and Ultra-Long Life Lithium Storage.

PubMed

Niu, Shanshan; Wang, Zhiyu; Yu, Mingliang; Yu, Mengzhou; Xiu, Luyang; Wang, Song; Wu, Xianhong; Qiu, Jieshan

2018-04-24

Powerful yet thinner lithium-ion batteries (LIBs) are eagerly desired to meet the practical demands of electric vehicles and portable electronic devices. However, the use of soft carbon materials in current electrode design to improve the electrode conductivity and stability does not afford high volumetric capacity due to their low density and capacity for lithium storage. Herein, we report a strategy leveraging the MXene with superior conductivity and density to soft carbon as matrix and additive material for comprehensively enhancing the power capability, lifespan, and volumetric capacity of conversion-type anode. A kinetics favorable 2D nanohybrid with high conductivity, compact density, accumulated pseudocapacitance, and diffusion-controlled behavior is fabricated by coupling Ti 3 C 2 MXene with high-density molybdenum carbide for fast lithium storage over 300 cycles with high capacities. By replacing the carbonaceous conductive agent with Ti 3 C 2 MXene, the electrodes with better conductivity and dramatically reduced thickens could be further manufactured to achieve 37-40% improvement in capacity retention and ultra-long life of 5500 cycles with extremely slow capacity loss of 0.002% per cycle at high current rates. Ultrahigh volumetric capacity of 2460 mAh cm -3 could be attained by such MXene-based electrodes, highlighting the great promise of MXene in the development of high-performance LIBs.

Density-tunable lightweight polymer composites with dual-functional ability of efficient EMI shielding and heat dissipation.

PubMed

Lee, Seung Hwan; Yu, Seunggun; Shahzad, Faisal; Kim, Woo Nyon; Park, Cheolmin; Hong, Soon Man; Koo, Chong Min

2017-09-21

Lightweight dual-functional materials with high EMI shielding performance and thermal conductivity are of great importance in modern cutting-edge applications, such as mobile electronics, automotive, aerospace, and military. Unfortunately, a clear material solution has not emerged yet. Herein, we demonstrate a simple and effective way to fabricate lightweight metal-based polymer composites with dual-functional ability of excellent EMI shielding effectiveness and thermal conductivity using expandable polymer bead-templated Cu hollow beads. The low-density Cu hollow beads (ρ ∼ 0.44 g cm -3 ) were fabricated through electroless plating of Cu on the expanded polymer beads with ultralow density (ρ ∼ 0.02 g cm -3 ). The resulting composites that formed a continuous 3D Cu network with a very small Cu content (∼9.8 vol%) exhibited excellent EMI shielding (110.7 dB at 7 GHz) and thermal conductivity (7.0 W m -1 K -1 ) with isotropic features. Moreover, the densities of the composites are tunable from 1.28 to 0.59 g cm -3 in accordance with the purpose of their applications. To the best of our knowledge, the resulting composites are the best lightweight dual-functional materials with exceptionally high EMI SE and thermal conductivity performance among synthetic polymer composites.

Validity criteria for Fermi's golden rule scattering rates applied to metallic nanowires.

PubMed

Moors, Kristof; Sorée, Bart; Magnus, Wim

2016-09-14

Fermi's golden rule underpins the investigation of mobile carriers propagating through various solids, being a standard tool to calculate their scattering rates. As such, it provides a perturbative estimate under the implicit assumption that the effect of the interaction Hamiltonian which causes the scattering events is sufficiently small. To check the validity of this assumption, we present a general framework to derive simple validity criteria in order to assess whether the scattering rates can be trusted for the system under consideration, given its statistical properties such as average size, electron density, impurity density et cetera. We derive concrete validity criteria for metallic nanowires with conduction electrons populating a single parabolic band subjected to different elastic scattering mechanisms: impurities, grain boundaries and surface roughness.

Saturation and negative temperature coefficient of electrical resistivity in liquid iron-sulfur alloys at high densities from first-principles calculations

NASA Astrophysics Data System (ADS)

Wagle, Fabian; Steinle-Neumann, Gerd; de Koker, Nico

2018-03-01

We report results on electronic transport properties of liquid Fe-S alloys at conditions of planetary cores, computed using first-principle techniques in the Kubo-Greenwood formalism. We describe a combined effect of resistivity saturation due to temperature, compression, and chemistry by comparing the electron mean free path from the Drude response of optical conductivity to the mean interatomic distance. At high compression and high sulfur concentration the Ioffe-Regel condition is satisfied, and the temperature coefficient of resistivity changes sign from positive to negative. We show that this happens due to a decrease in the d density of states at the Fermi level in response to thermal broadening.

Effective g-factors of carriers in inverted InAs/GaSb bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mu, Xiaoyang; Collaborative Innovation Center of Quantum Matter, Beijing 100871; Sullivan, Gerard

2016-01-04

We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor ofmore » less than 3.« less

Building an Electronic Bridge via Ag Decoration To Enhance Kinetics of Iron Fluoride Cathode in Lithium-Ion Batteries.

PubMed

Li, Yu; Zhou, Xingzhen; Bai, Ying; Chen, Guanghai; Wang, Zhaohua; Li, Hui; Wu, Feng; Wu, Chuan

2017-06-14

As a typical multielectron cathode material for lithium-ion batteries, iron fluoride (FeF 3 ) and its analogues suffer from poor electronic conductivity and low actual specific capacity. Herein, we introduce Ag nanoparticles by silver mirror reaction into the FeF 3 ·0.33H 2 O cathode to build the electronic bridge between the solid (active materials) and liquid (electrolyte) interface. The crystal structures of as-prepared samples are characterized by X-ray diffraction and Rietveld refinement. Moreover, the density of states of FeF 3 ·0.33H 2 O and FeF 3 ·0.33H 2 O/Ag (Ag-decorated FeF 3 ·0.33H 2 O) samples are calculated using the first principle density functional theory. The FeF 3 ·0.33H 2 O/Ag cathodes exhibit significant enhancements on the electrochemical performance in terms of the cycle performance and rate capability, especially for the Ag-decorated amount of 5%. It achieves an initial capacity of 168.2 mA h g -1 and retains a discharge capacity of 128.4 mA h g -1 after 50 cycles in the voltage range of 2.0-4.5 V. It demonstrates that Ag decoration can reduce the band gap, improve electronic conductivity, and elevate intercalation/deintercalation kinetics.

Combined Modeling of Acceleration, Transport, and Hydrodynamic Response in Solar Flares. 1; The Numerical Model

NASA Technical Reports Server (NTRS)

Liu, Wei; Petrosian, Vahe; Mariska, John T.

2009-01-01

Acceleration and transport of high-energy particles and fluid dynamics of atmospheric plasma are interrelated aspects of solar flares, but for convenience and simplicity they were artificially separated in the past. We present here self consistently combined Fokker-Planck modeling of particles and hydrodynamic simulation of flare plasma. Energetic electrons are modeled with the Stanford unified code of acceleration, transport, and radiation, while plasma is modeled with the Naval Research Laboratory flux tube code. We calculated the collisional heating rate directly from the particle transport code, which is more accurate than those in previous studies based on approximate analytical solutions. We repeated the simulation of Mariska et al. with an injection of power law, downward-beamed electrons using the new heating rate. For this case, a -10% difference was found from their old result. We also used a more realistic spectrum of injected electrons provided by the stochastic acceleration model, which has a smooth transition from a quasi-thermal background at low energies to a non thermal tail at high energies. The inclusion of low-energy electrons results in relatively more heating in the corona (versus chromosphere) and thus a larger downward heat conduction flux. The interplay of electron heating, conduction, and radiative loss leads to stronger chromospheric evaporation than obtained in previous studies, which had a deficit in low-energy electrons due to an arbitrarily assumed low-energy cutoff. The energy and spatial distributions of energetic electrons and bremsstrahlung photons bear signatures of the changing density distribution caused by chromospheric evaporation. In particular, the density jump at the evaporation front gives rise to enhanced emission, which, in principle, can be imaged by X-ray telescopes. This model can be applied to investigate a variety of high-energy processes in solar, space, and astrophysical plasmas.

Electronic transport mechanism in intrinsic and doped nanocrystalline silicon films deposited by RF-magnetron sputtering at low temperature

NASA Astrophysics Data System (ADS)

Benlakehal, D.; Belfedal, A.; Bouizem, Y.; Sib, J. D.; Chahed, L.; Zellama, K.

2016-12-01

The dependence on the temperature range, T, of the electronic transport mechanism in intrinsic and doped hydrogenated nanocrystalline silicon films, deposited by radiofrequency-magnetron sputtering at low substrate temperature, has been studied. Electrical conductivity measurements σ(T) have been conducted on these films, as a function of temperature, in the 93-450 K range. The analysis of these results clearly shows a thermally activated conduction process in the 273-450 K range which allows us to estimate the associated activation energy as well as the preexponential conductivity factor. While, in the lower temperature range (T < 273 K), a non-ohmic behavior is observed for the conductivity changes. The conductivity σ(T) presents a linear dependence on (T-1/4) , and a hopping mechanism is suggested to explain these results. By using the Percolation theory, further information can be gained about the density of states near the Fermi level as well as the range and the hopping energy.

Electron Transport Coefficients and Effective Ionization Coefficients in SF6-O2 and SF6-Air Mixtures Using Boltzmann Analysis

NASA Astrophysics Data System (ADS)

Wei, Linsheng; Xu, Min; Yuan, Dingkun; Zhang, Yafang; Hu, Zhaoji; Tan, Zhihong

2014-10-01

The electron drift velocity, electron energy distribution function (EEDF), density-normalized effective ionization coefficient and density-normalized longitudinal diffusion velocity are calculated in SF6-O2 and SF6-Air mixtures. The experimental results from a pulsed Townsend discharge are plotted for comparison with the numerical results. The reduced field strength varies from 40 Td to 500 Td (1 Townsend=10-17 V·cm2) and the SF6 concentration ranges from 10% to 100%. A Boltzmann equation associated with the two-term spherical harmonic expansion approximation is utilized to gain the swarm parameters in steady-state Townsend. Results show that the accuracy of the Boltzmann solution with a two-term expansion in calculating the electron drift velocity, electron energy distribution function, and density-normalized effective ionization coefficient is acceptable. The effective ionization coefficient presents a distinct relationship with the SF6 content in the mixtures. Moreover, the E/Ncr values in SF6-Air mixtures are higher than those in SF6-O2 mixtures and the calculated value E/Ncr in SF6-O2 and SF6-Air mixtures is lower than the measured value in SF6-N2. Parametric studies conducted on these parameters using the Boltzmann analysis offer substantial insight into the plasma physics, as well as a basis to explore the ozone generation process.

Calculated electronic, transport, and related properties of zinc blende boron arsenide (zb-BAs)

NASA Astrophysics Data System (ADS)

Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Franklin, Lashounda; Bagayoko, Diola

2016-10-01

We present the results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide. We utilized the local density approximation potential of Ceperley and Alder, as parameterized by Vosko and his group, the linear combination of Gaussian orbitals formalism, and the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF), in carrying out our completely self-consistent calculations. With this method, the results of our calculations have the full, physical content of density functional theory (DFT). Our results include electronic energy bands, densities of states, effective masses, and the bulk modulus. Our calculated, indirect band gap of 1.48 eV, from Γ to a conduction band minimum close to X, for the room temperature lattice constant of 4.777 Å, is in an excellent agreement with the experimental value of 1.46 ± 0.02 eV. We thoroughly explain the reasons for the excellent agreement between our findings and corresponding, experimental ones. This work provides a confirmation of the capability of DFT to describe accurately properties of materials, if the computations adhere strictly to the conditions of validity of DFT, as done by the BZW-EF method.

Structural, electronic, and thermodynamic properties of curium dioxide: Density functional theory calculations

NASA Astrophysics Data System (ADS)

Hou, Ling; Li, Wei-Dong; Wang, Fangwei; Eriksson, Olle; Wang, Bao-Tian

2017-12-01

We present a systematic investigation of the structural, magnetic, electronic, mechanical, and thermodynamic properties of CmO2 with the local density approximation (LDA)+U and the generalized gradient approximation (GGA)+U approaches. The strong Coulomb repulsion and the spin-orbit coupling (SOC) effects on the lattice structures, electronic density of states, and band gaps are carefully studied, and compared with other A O2 (A =U , Np, Pu, and Am). The ferromagnetic configuration with half-metallic character is predicted to be energetically stable while a charge-transfer semiconductor is predicted for the antiferromagnetic configuration. The elastic constants and phonon spectra show that the fluorite structure is mechanically and dynamically stable. Based on the first-principles phonon density of states, the lattice vibrational energy is calculated using the quasiharmonic approximation. Then, the Gibbs free energy, thermal expansion coefficient, specific heat, and entropy are obtained and compared with experimental data. The mode Grüneisen parameters are presented to analyze the anharmonic properties. The Slack relation is applied to obtain the lattice thermal conductivity in temperature range of 300-1600 K. The phonon group velocities are also calculated to investigate the heat transfer. For all these properties, if available, we compare the results of CmO2 with other A O2 .

Redox Potentials of Colloidal n-Type ZnO Nanocrystals: Effects of Confinement, Electron Density, and Fermi-Level Pinning by Aldehyde Hydrogenation.

PubMed

Carroll, Gerard M; Schimpf, Alina M; Tsui, Emily Y; Gamelin, Daniel R

2015-09-02

Electronically doped colloidal semiconductor nanocrystals offer valuable opportunities to probe the new physical and chemical properties imparted by their excess charge carriers. Photodoping is a powerful approach to introducing and controlling free carrier densities within free-standing colloidal semiconductor nanocrystals. Photoreduced (n-type) colloidal ZnO nanocrystals possessing delocalized conduction-band (CB) electrons can be formed by photochemical oxidation of EtOH. Previous studies of this chemistry have demonstrated photochemical electron accumulation, in some cases reaching as many as >100 electrons per ZnO nanocrystal, but in every case examined to date this chemistry maximizes at a well-defined average electron density of ⟨Nmax⟩ ≈ (1.4 ± 0.4) × 10(20) cm(-3). The origins of this maximum have never been identified. Here, we use a solvated redox indicator for in situ determination of reduced ZnO nanocrystal redox potentials. The Fermi levels of various photodoped ZnO nanocrystals possessing on average just one excess CB electron show quantum-confinement effects, as expected, but are >600 meV lower than those of the same ZnO nanocrystals reduced chemically using Cp*2Co, reflecting important differences between their charge-compensating cations. Upon photochemical electron accumulation, the Fermi levels become independent of nanocrystal volume at ⟨N⟩ above ∼2 × 10(19) cm(-3), and maximize at ⟨Nmax⟩ ≈ (1.6 ± 0.3) × 10(20) cm(-3). This maximum is proposed to arise from Fermi-level pinning by the two-electron/two-proton hydrogenation of acetaldehyde, which reverses the EtOH photooxidation reaction.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

PubMed Central

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-01-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics. PMID:26411932

Scalable sub-micron patterning of organic materials toward high density soft electronics

DOE PAGES

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun; ...

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Lewis Base Passivation of Hybrid Halide Perovskites Slows Electron-Hole Recombination: Time-Domain Ab Initio Analysis.

PubMed

Liu, Lihong; Fang, Wei-Hai; Long, Run; Prezhdo, Oleg V

2018-03-01

Nonradiative electron-hole recombination plays a key role in determining photon conversion efficiencies in solar cells. Experiments demonstrate significant reduction in the recombination rate upon passivation of methylammonium lead iodide perovskite with Lewis base molecules. Using nonadiabatic molecular dynamics combined with time-domain density functional theory, we find that the nonradiative charge recombination is decelerated by an order of magnitude upon adsorption of the molecules. Thiophene acts by the traditional passivation mechanism, forcing electron density away from the surface. In contrast, pyridine localizes the electron at the surface while leaving it energetically near the conduction band edge. This is because pyridine creates a stronger coordinative bond with a lead atom of the perovskite and has a lower energy unoccupied orbital compared with thiophene due to the more electronegative nitrogen atom relative to thiophene's sulfur. Both molecules reduce two-fold the nonadiabatic coupling and electronic coherence time. A broad range of vibrational modes couple to the electronic subsystem, arising from inorganic and organic components. The simulations reveal the atomistic mechanisms underlying the enhancement of the excited-state lifetime achieved by the perovskite passivation, rationalize the experimental results, and advance our understanding of charge-phonon dynamics in perovskite solar cells.

Kinetic model for the collisionless sheath of a collisional plasma

DOE PAGES

Tang, Xian-Zhu; Guo, Zehua

2016-08-04

Collisional plasmas typically have mean-free-path still much greater than the Debye length, so the sheath is mostly collisionless. Once the plasma density, temperature, and flow are specified at the sheath entrance, the profile variation of electron and ion density, temperature, flow speed, and conductive heat fluxes inside the sheath is set by collisionless dynamics, and can be predicted by an analytical kinetic model distribution. Finally, these predictions are contrasted in this paper with direct kinetic simulations, showing good agreement.

Method of making a layered composite electrode/electrolyte

DOEpatents

Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

2005-01-25

An electrode/electrolyte structure is prepared by a plurality of methods. An unsintered (possibly bisque fired) moderately catalytic electronically-conductive or homogeneous mixed ionic electronic conductive electrode material is deposited on a layer composed of a sintered or unsintered ionically-conductive electrolyte material prior to being sintered. A layer of particulate electrode material is deposited on an unsintered ("green") layer of electrolyte material and the electrode and electrolyte layers are sintered simultaneously, sometimes referred to as "co-firing," under conditions suitable to fully densify the electrolyte while the electrode retains porosity. Or, the layer of particulate electrode material is deposited on a previously sintered layer of electrolyte, and then sintered. Subsequently, a catalytic material is added to the electrode structure by infiltration of an electrolcatalyst precursor (e.g., a metal salt such as a transition metal nitrate). This may be followed by low temperature firing to convert the precursor to catalyst. The invention allows for an electrode with high electronic conductivity and sufficient catalytic activity to achieve high power density in an ionic (electrochemical) device such as fuel cells and electrolytic gas separation systems.

Multicomponent density functional theory embedding formulation.

PubMed

Culpitt, Tanner; Brorsen, Kurt R; Pak, Michael V; Hammes-Schiffer, Sharon

2016-07-28

Multicomponent density functional theory (DFT) methods have been developed to treat two types of particles, such as electrons and nuclei, quantum mechanically at the same level. In the nuclear-electronic orbital (NEO) approach, all electrons and select nuclei, typically key protons, are treated quantum mechanically. For multicomponent DFT methods developed within the NEO framework, electron-proton correlation functionals based on explicitly correlated wavefunctions have been designed and used in conjunction with well-established electronic exchange-correlation functionals. Herein a general theory for multicomponent embedded DFT is developed to enable the accurate treatment of larger systems. In the general theory, the total electronic density is separated into two subsystem densities, denoted as regular and special, and different electron-proton correlation functionals are used for these two electronic densities. In the specific implementation, the special electron density is defined in terms of spatially localized Kohn-Sham electronic orbitals, and electron-proton correlation is included only for the special electron density. The electron-proton correlation functional depends on only the special electron density and the proton density, whereas the electronic exchange-correlation functional depends on the total electronic density. This scheme includes the essential electron-proton correlation, which is a relatively local effect, as well as the electronic exchange-correlation for the entire system. This multicomponent DFT-in-DFT embedding theory is applied to the HCN and FHF(-) molecules in conjunction with two different electron-proton correlation functionals and three different electronic exchange-correlation functionals. The results illustrate that this approach provides qualitatively accurate nuclear densities in a computationally tractable manner. The general theory is also easily extended to other types of partitioning schemes for multicomponent systems.

Multicomponent density functional theory embedding formulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Culpitt, Tanner; Brorsen, Kurt R.; Pak, Michael V.

Multicomponent density functional theory (DFT) methods have been developed to treat two types of particles, such as electrons and nuclei, quantum mechanically at the same level. In the nuclear-electronic orbital (NEO) approach, all electrons and select nuclei, typically key protons, are treated quantum mechanically. For multicomponent DFT methods developed within the NEO framework, electron-proton correlation functionals based on explicitly correlated wavefunctions have been designed and used in conjunction with well-established electronic exchange-correlation functionals. Herein a general theory for multicomponent embedded DFT is developed to enable the accurate treatment of larger systems. In the general theory, the total electronic density ismore » separated into two subsystem densities, denoted as regular and special, and different electron-proton correlation functionals are used for these two electronic densities. In the specific implementation, the special electron density is defined in terms of spatially localized Kohn-Sham electronic orbitals, and electron-proton correlation is included only for the special electron density. The electron-proton correlation functional depends on only the special electron density and the proton density, whereas the electronic exchange-correlation functional depends on the total electronic density. This scheme includes the essential electron-proton correlation, which is a relatively local effect, as well as the electronic exchange-correlation for the entire system. This multicomponent DFT-in-DFT embedding theory is applied to the HCN and FHF{sup −} molecules in conjunction with two different electron-proton correlation functionals and three different electronic exchange-correlation functionals. The results illustrate that this approach provides qualitatively accurate nuclear densities in a computationally tractable manner. The general theory is also easily extended to other types of partitioning schemes for multicomponent systems.« less

Normal and abnormal evolution of argon metastable density in high-density plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, B. H.; Kim, J. H., E-mail: jhkim86@kriss.re.kr; You, S. J., E-mail: sjyou@cnu.ac.kr

2015-05-15

A controversial problem on the evolution of Ar metastable density as a function of electron density (increasing trend versus decreasing trend) was resolved by discovering the anomalous evolution of the argon metastable density with increasing electron density (discharge power), including both trends of the metastable density [Daltrini et al., Appl. Phys. Lett. 92, 061504 (2008)]. Later, by virtue of an adequate physical explanation based on a simple global model, both evolutions of the metastable density were comprehensively understood as part of the abnormal evolution occurring at low- and high-density regimes, respectively, and thus the physics behind the metastable evolution hasmore » seemed to be clearly disclosed. In this study, however, a remarkable result for the metastable density behavior with increasing electron density was observed: even in the same electron density regime, there are both normal and abnormal evolutions of metastable-state density with electron density depending on the measurement position: The metastable density increases with increasing electron density at a position far from the inductively coupled plasma antenna but decreases at a position close to the antenna. The effect of electron temperature, which is spatially nonuniform in the plasma, on the electron population and depopulation processes of Argon metastable atoms with increasing electron density is a clue to understanding the results. The calculated results of the global model, including multistep ionization for the argon metastable state and measured electron temperature, are in a good agreement with the experimental results.« less

Electronic Materials and Applications 2014 (Abstracts)

DTIC Science & Technology

2015-04-02

the thermal image using IR camera and surface tempera- ture using thermo couple. Lastly, we conducted a surface coating to change the surface...progress in the superconducting films and coated conductors of iron chalcogenides. With a CeO2 buffer , critical current densities (Jc) over 7 MA/cm2...Roosen, University of Erlangen-Nuremberg, Germany Kato, N. 23-Jan 11:15AM Pacific 11:30 AM (EMA-S1-021-2014) Glass-like Thermal Conductivity of (010

Nanopipettes for Metal Transport

NASA Astrophysics Data System (ADS)

Svensson, K.; Olin, H.; Olsson, E.

2004-09-01

Here we demonstrate, for the first time experimentally, a nanopipette action for metals using multiwalled carbon nanotubes. The process relies on electromigration forces, created at high electron current densities, enabling the transport of material inside the hollow core of carbon nanotubes. In this way nanoparticles of iron were transported to and from electrically conducting substrates.

Nanopipettes for metal transport.

PubMed

Svensson, K; Olin, H; Olsson, E

2004-10-01

Here we demonstrate, for the first time experimentally, a nanopipette action for metals using multiwalled carbon nanotubes. The process relies on electromigration forces, created at high electron current densities, enabling the transport of material inside the hollow core of carbon nanotubes. In this way nanoparticles of iron were transported to and from electrically conducting substrates.

Self-interaction corrected LDA + U investigations of BiFeO3 properties: plane-wave pseudopotential method

NASA Astrophysics Data System (ADS)

Yaakob, M. K.; Taib, M. F. M.; Lu, L.; Hassan, O. H.; Yahya, M. Z. A.

2015-11-01

The structural, electronic, elastic, and optical properties of BiFeO3 were investigated using the first-principles calculation based on the local density approximation plus U (LDA + U) method in the frame of plane-wave pseudopotential density functional theory. The application of self-interaction corrected LDA + U method improved the accuracy of the calculated properties. Results of structural, electronic, elastic, and optical properties of BiFeO3, calculated using the LDA + U method were in good agreement with other calculation and experimental data; the optimized choice of on-site Coulomb repulsion U was 3 eV for the treatment of strong electronic localized Fe 3d electrons. Based on the calculated band structure and density of states, the on-site Coulomb repulsion U had a significant effect on the hybridized O 2p and Fe 3d states at the valence and the conduction band. Moreover, the elastic stiffness tensor, the longitudinal and shear wave velocities, bulk modulus, Poisson’s ratio, and the Debye temperature were calculated for U = 0, 3, and 6 eV. The elastic stiffness tensor, bulk modulus, sound velocities, and Debye temperature of BiFeO3 consistently decreased with the increase of the U value.

Possible origin of photoconductivity in La0.7Ca0.3MnO3

NASA Astrophysics Data System (ADS)

Sagdeo, P. R.; Choudhary, R. J.; Phase, D. M.

2010-01-01

The effect of photon energy on the density of states near Fermi level of pulsed laser deposited La0.7Ca0.3MnO3 thin film has been studied to investigate the possible origin of change in the conductivity of these manganites upon photon exposure. For this purpose the photoelectron spectroscopy measurements were carried out using CSR beamline (BL-2) on Indus-1 synchrotron radiation source. The valance band spectra were measured at room temperature with photon energy ranging from 40 to 60 eV. We could see huge change in the density of states near Fermi level and this change is observed to be highest at 56 eV which is due to the resonance between Mn 3p to Mn 3d level. Our results suggest that the probability of electron transfer from deep Mn 3p level to Mn 3d-eg level is higher than that of Mn 3d-t2g level. It appears that this transfer of electron from deep Mn level to Mn 3d-eg level not only modifies the density of state near Fermi level but also changes the mobility of electrons by modifying the electron lattice coupling due to presence of Mn+3 Jahn-Teller ion.

Spin-polarized structural, elastic, electronic and magnetic properties of half-metallic ferromagnetism in V-doped ZnSe

NASA Astrophysics Data System (ADS)

Monir, M. El Amine.; Baltache, H.; Murtaza, G.; Khenata, R.; Ahmed, Waleed K.; Bouhemadou, A.; Omran, S. Bin; Seddik, T.

2015-01-01

Based on first principles spin-polarized density functional theory, the structural, elastic electronic and magnetic properties of Zn1-xVxSe (for x=0.25, 0.50, 0.75) in zinc blende structure have been studied. The investigation was done using the full-potential augmented plane wave method as implemented in WIEN2k code. The exchange-correlation potential was treated with the generalized gradient approximation PBE-GGA for the structural and elastic properties. Moreover, the PBE-GGA+U approximation (where U is the Hubbard correlation terms) is employed to treat the "d" electrons properly. A comparative study between the band structures, electronic structures, total and partial densities of states and local moments calculated within both GGA and GGA+U schemes is presented. The analysis of spin-polarized band structure and density of states shows the half-metallic ferromagnetic character and are also used to determine s(p)-d exchange constants N0α (conduction band) and N0β (valence band) due to Se(4p)-V(3d) hybridization. It has been clearly evidence that the magnetic moment of V is reduced from its free space change value of 3 μB and the minor atomic magnetic moment on Zn and Se are generated.

Observation of the fractional quantum Hall effect in graphene.

PubMed

Bolotin, Kirill I; Ghahari, Fereshte; Shulman, Michael D; Stormer, Horst L; Kim, Philip

2009-11-12

When electrons are confined in two dimensions and subject to strong magnetic fields, the Coulomb interactions between them can become very strong, leading to the formation of correlated states of matter, such as the fractional quantum Hall liquid. In this strong quantum regime, electrons and magnetic flux quanta bind to form complex composite quasiparticles with fractional electronic charge; these are manifest in transport measurements of the Hall conductivity as rational fractions of the elementary conductance quantum. The experimental discovery of an anomalous integer quantum Hall effect in graphene has enabled the study of a correlated two-dimensional electronic system, in which the interacting electrons behave like massless chiral fermions. However, owing to the prevailing disorder, graphene has so far exhibited only weak signatures of correlated electron phenomena, despite intense experimental and theoretical efforts. Here we report the observation of the fractional quantum Hall effect in ultraclean, suspended graphene. In addition, we show that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap. These newly discovered quantum states offer the opportunity to study correlated Dirac fermions in graphene in the presence of large magnetic fields.

Charge transport through DNA based electronic barriers

NASA Astrophysics Data System (ADS)

Patil, Sunil R.; Chawda, Vivek; Qi, Jianqing; Anantram, M. P.; Sinha, Niraj

2018-05-01

We report charge transport in electronic 'barriers' constructed by sequence engineering in DNA. Considering the ionization potentials of Thymine-Adenine (AT) and Guanine-Cytosine (GC) base pairs, we treat AT as 'barriers'. The effect of DNA conformation (A and B form) on charge transport is also investigated. Particularly, the effect of width of 'barriers' on hole transport is investigated. Density functional theory (DFT) calculations are performed on energy minimized DNA structures to obtain the electronic Hamiltonian. The quantum transport calculations are performed using the Landauer-Buttiker framework. Our main findings are contrary to previous studies. We find that a longer A-DNA with more AT base pairs can conduct better than shorter A-DNA with a smaller number of AT base pairs. We also find that some sequences of A-DNA can conduct better than a corresponding B-DNA with the same sequence. The counterions mediated charge transport and long range interactions are speculated to be responsible for counter-intuitive length and AT content dependence of conductance of A-DNA.

Effect of incorporation of ethylene glycol into PEDOT:PSS on electron phonon coupling and conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw; Ni, Wei-Shih; Lee, Jhe-You

2015-06-07

The effect of incorporation of ethylene glycol (EG) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on electron phonon coupling and conductivity is investigated. It is shown that the carrier density (N{sub C}) increases significantly and the carrier mobility (μ) increases slightly at 300 K. The increased intensity of the Raman spectrum between 1400 and 1450 cm{sup −1}, following EG treatment (that is, the quinoid-dominated structures of the PEDOT chain), leads to an increase in the number of polarons (bipolarons), which leads to an increase in N{sub C}. In addition, μ in PEDOT:PSS samples with or without EG addition exhibits a strong temperature dependence, which demonstrates themore » dominance of tunneling (hopping) at low (high) temperatures. The high conductivity of PEDOT:PSS samples with the addition of EG is attributed to the combined effect of the modification of the electron-phonon coupling and the increase in N{sub C} (μ)« less

Electronic structure and thermoelectric transport properties of the golden Th{sub 2}S{sub 3}-type Ti{sub 2}O{sub 3} under pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Bin, E-mail: hnsqxubin@163.com; Gao, Changzheng; Zhang, Jing

2016-05-15

A lot of physical properties of Th{sub 2}S{sub 3}-type Ti{sub 2}O{sub 3} have investigated experimentally, hence, we calculated electronic structure and thermoelectric transport properties by the first-principles calculation under pressure. The increase of the band gaps is very fast from 30 GPa to 35 GPa, which is mainly because of the rapid change of the lattice constants. The total density of states becomes smaller with increasing pressure, which shows that Seebeck coefficient gradually decreases. Two main peaks of Seebeck coefficients always decrease and shift to the high doping area with increasing temperature under pressure. The electrical conductivities always decrease withmore » increasing temperature under pressure. The electrical conductivity can be improved by increasing pressure. Electronic thermal conductivity increases with increasing pressure. It is noted that the thermoelectric properties is reduced with increasing temperature.« less

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

Flexible three-dimensional electrodes of hollow carbon bead strings as graded sulfur reservoirs and the synergistic mechanism for lithium-sulfur batteries

NASA Astrophysics Data System (ADS)

Yang, Dan; Ni, Wei; Cheng, Jianli; Wang, Zhuanpei; Wang, Ting; Guan, Qun; Zhang, Yun; Wu, Hao; Li, Xiaodong; Wang, Bin

2017-08-01

Three-dimensional (3D) flexible electrodes of stringed hollow nitrogen-doped (N-doped) carbon nanospheres as graded sulfur reservoirs and conductive frameworks were elaborately designed via a combination of the advantages of hollow structures, 3D electrodes and flexible devices. The as-prepared electrodes by a synergistic method of electrospinning, template sacrificing and activation for Li-S batteries without any binder or conductive additives but a 3D interconnected conductive network offered multiple transport paths for electrons and improved sulfur utilization and facilitated an easy access to Li+ ingress/egress. With the increase of density of hollow carbon spheres in the strings, the self-supporting composite electrode reveals an enhanced synergistic mechanism for sulfur confinement and displays a better cycling stability and rate performance. It delivers a high initial specific capacity of 1422.6 mAh g-1 at the current rate of 0.2C with the high sulfur content of 76 wt.%, and a much higher energy density of 754 Wh kg-1 and power density of 1901 Wh kg-1, which greatly improve the energy/power density of traditional lithium-sulfur batteries and will be promising for further commercial applications.

Conductive Polymer Binder for High-Tap-Density Nanosilicon Material for Lithium-Ion Battery Negative Electrode Application.

PubMed

Zhao, Hui; Wei, Yang; Qiao, Ruimin; Zhu, Chenhui; Zheng, Ziyan; Ling, Min; Jia, Zhe; Bai, Ying; Fu, Yanbao; Lei, Jinglei; Song, Xiangyun; Battaglia, Vincent S; Yang, Wanli; Messersmith, Phillip B; Liu, Gao

2015-12-09

High-tap-density silicon nanomaterials are highly desirable as anodes for lithium ion batteries, due to their small surface area and minimum first-cycle loss. However, this material poses formidable challenges to polymeric binder design. Binders adhere on to the small surface area to sustain the drastic volume changes during cycling; also the low porosities and small pore size resulting from this material are detrimental to lithium ion transport. This study introduces a new binder, poly(1-pyrenemethyl methacrylate-co-methacrylic acid) (PPyMAA), for a high-tap-density nanosilicon electrode cycled in a stable manner with a first cycle efficiency of 82%-a value that is further improved to 87% when combined with graphite material. Incorporating the MAA acid functionalities does not change the lowest unoccupied molecular orbital (LUMO) features or lower the adhesion performance of the PPy homopolymer. Our single-molecule force microscopy measurement of PPyMAA reveals similar adhesion strength between polymer binder and anode surface when compared with conventional polymer such as homopolyacrylic acid (PAA), while being electronically conductive. The combined conductivity and adhesion afforded by the MAA and pyrene copolymer results in good cycling performance for the high-tap-density Si electrode.

High electron doping to a wide band gap semiconductor 12CaO•7Al2O3 thin film

NASA Astrophysics Data System (ADS)

Miyakawa, Masashi; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2007-04-01

High-density electrons (˜1.9×1021cm-3) were doped into a polycrystalline film of a wide band gap (˜7eV) semiconductor 12CaO•7Al2O3 (C12A7) by an in situ postdeposition reduction treatment using an oxygen-deficient C12A7 overlayer. The resultant film exhibits metallic conduction with a Hall mobility of ˜2.5cm2V-1s-1 and a conductivity of ˜800Scm-1. Optical analyses indicate that most of the doped electrons behave as free carriers with an effective mass of 0.82me and the estimated in-grain mobility is 5.2cm2V-1s-1, which agrees reasonably with the value obtained for high-quality single crystals.

Electronic tunneling through a fullerene-like molecular bridge

NASA Astrophysics Data System (ADS)

Vanaie, H.; Yaghobi, M.

2018-04-01

This study was conducted to consider the electronic transport properties of the N_{36} B_{36} molecule, using the Green's function method based on the GW model. The number, width, height and position of density of state peaks are dramatically dependent on the correlation effect, the contact type and symmetric properties of the molecule. Also, negative differential resistance behavior was observed for all modes in voltages 4.4 V (- 4.5 V) to 4.7 V (- 4.7 V). The N_{36} B_{36} molecule behaves as an insulator where the total current becomes zero for the same values of the gate voltages but acts as a metal at other values. Therefore, the physical picture of electron conduction may change in N_{36} B_{36}—based molecular devices and it could behave as a semiconductor.

H-tailored surface conductivity in narrow band gap In(AsN)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velichko, A. V., E-mail: amalia.patane@nottingham.ac.uk, E-mail: anton.velychko@nottingham.ac.uk; Patanè, A., E-mail: amalia.patane@nottingham.ac.uk, E-mail: anton.velychko@nottingham.ac.uk; Makarovsky, O.

2015-01-12

We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼10{sup 18 }m{sup −2} and a high electron mobility (μ > 0.1 m{sup 2}V{sup −1}s{sup −1} at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.

Decoherence-induced conductivity in the one-dimensional Anderson model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stegmann, Thomas; Wolf, Dietrich E.; Ujsághy, Orsolya

We study the effect of decoherence on the electron transport in the one-dimensional Anderson model by means of a statistical model [1, 2, 3, 4, 5]. In this model decoherence bonds are randomly distributed within the system, at which the electron phase is randomized completely. Afterwards, the transport quantity of interest (e.g. resistance or conductance) is ensemble averaged over the decoherence configurations. Averaging the resistance of the sample, the calculation can be performed analytically. In the thermodynamic limit, we find a decoherence-driven transition from the quantum-coherent localized regime to the Ohmic regime at a critical decoherence density, which is determinedmore » by the second-order generalized Lyapunov exponent (GLE) [4].« less

The calculation of thermophysical properties of nickel plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Apfelbaum, E. M.

2015-09-15

The thermophysical properties of Nickel plasma have been calculated for the temperatures 10–60 kK and densities less than 1 g/cm{sup 3}. These properties are the pressure, internal energy, heat capacity, and the electronic transport coefficients (electrical conductivity, thermal conductivity, and thermal power). The thermodynamic values have been calculated by means of the chemical model, which also allows one to obtain the ionic composition of considered plasma. The composition has been used to calculate the electronic transport coefficients within the relaxation time approximation. The results of the present investigation have been compared with the calculations of other researchers and available data ofmore » measurements.« less

(Bi,Sr) (Fe1−x,Mx)O3−δ (M = Co, Ni and Mn) Cathode Materials with Mixed Electro-Ionic Conductivity

PubMed Central

Wei, Wen-Cheng J.; Huang, Der-Rong; Wang, Dan

2016-01-01

(Bi,Sr)FeO3−δ (BSF) cathode materials doped with either Co, Ni or Mn are synthesized by an ethylene diamine tetra-acetic acid (EDTA)-citrate complexing method, and the effects of the doping level on the mixed electronic-ionic conductivity at various temperatures are studied up to 800 °C. The phase purity and solid solution limit are investigated by X-ray diffraction (XRD). The ionic conductivity is measured by the four-probe direct current (DC) method, the valence state of Fe and Mn by X-ray photoelectron spectroscopy (XPS), and the oxygen non-stoichiometry by differential thermo-gravimetric analysis (TGA). The doped ferrites show interesting electronic conductivity dependent on the testing temperature, implying two conductive mechanisms, either controlled by double exchange at lower temperatures or small polaron (electron-oxygen vacancy) conduction at temperatures greater than 400 °C. The results of Co-doped BSF (S50C20) show the best mixed conductivity among the ferrites, and this is used to assemble cells. The cell with a S50C20 cathode in the region of 600–800 °C is improved by 15% in maximum power density greater than the cell with La0.6Sr0.4Co0.2Fe0.8O3−δ (LSCF) due to the balanced contribution from oxygen ions, vacancies and electrons. PMID:28774043

Thermal conductance at atomically clean and disordered silicon/aluminum interfaces: A molecular dynamics simulation study

NASA Astrophysics Data System (ADS)

Ih Choi, Woon; Kim, Kwiseon; Narumanchi, Sreekant

2012-09-01

Thermal resistance between layers impedes effective heat dissipation in electronics packaging applications. Thermal conductance for clean and disordered interfaces between silicon (Si) and aluminum (Al) was computed using realistic Si/Al interfaces and classical molecular dynamics with the modified embedded atom method potential. These realistic interfaces, which include atomically clean as well as disordered interfaces, were obtained using density functional theory. At 300 K, the magnitude of interfacial conductance due to phonon-phonon scattering obtained from the classical molecular dynamics simulations was approximately five times higher than the conductance obtained using analytical elastic diffuse mismatch models. Interfacial disorder reduced the thermal conductance due to increased phonon scattering with respect to the atomically clean interface. Also, the interfacial conductance, due to electron-phonon scattering at the interface, was greater than the conductance due to phonon-phonon scattering. This indicates that phonon-phonon scattering is the bottleneck for interfacial transport at the semiconductor/metal interfaces. The molecular dynamics modeling predictions for interfacial thermal conductance for a 5-nm disordered interface between Si/Al were in-line with recent experimental data in the literature.

Dynamic conductivity modified by impurity resonant states in doping three-dimensional Dirac semimetals

NASA Astrophysics Data System (ADS)

Li, Shuai; Wang, Chen; Zheng, Shi-Han; Wang, Rui-Qiang; Li, Jun; Yang, Mou

2018-04-01

The impurity effect is studied in three-dimensional Dirac semimetals in the framework of a T-matrix method to consider the multiple scattering events of Dirac electrons off impurities. It has been found that a strong impurity potential can significantly restructure the energy dispersion and the density of states of Dirac electrons. An impurity-induced resonant state emerges and significantly modifies the pristine optical response. It is shown that the impurity state disturbs the common longitudinal optical conductivity by creating either an optical conductivity peak or double absorption jumps, depending on the relative position of the impurity band and the Fermi level. More importantly, these conductivity features appear in the forbidden region between the Drude and interband transition, completely or partially filling the Pauli block region of optical response. The underlying physics is that the appearance of resonance states as well as the broadening of the bands leads to a more complicated selection rule for the optical transitions, making it possible to excite new electron-hole pairs in the forbidden region. These features in optical conductivity provide valuable information to understand the impurity behaviors in 3D Dirac materials.

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

DOE PAGES

Zhang, Lipeng; Xu, Haixuan; Kent, Paul R. C.; ...

2016-05-06

The emergence of two-dimensional metallic states at the LaAlO 3/SrTiO 3 (LAO/STO) heterostructure interface is known to occur at a critical thickness of four LAO over layers. This insulator-to-metal transition can be explained through the polar catastrophe mechanism arising from the divergence of the electrostatic potential at the LAO surface. Here, we demonstrate that nanostructuring can be effective in reducing or eliminating this critical thickness. Employing a modified polar catastrophe" model, we demonstrate that the nanowire heterostructure electrostatic potential diverges more rapidly as a function of layer thickness than in a regular heterostructure. Our first principles calculations indicate that formore » nanowire heterostructure geometries a one-dimensional electron gas (1DEG) can be induced, consistent with recent experimental observations of 1D conductivity in LAO/STO steps. Similar to LAO/STO 2DEGs, we predict that the 1D charge density will decay laterally within a few unit cells away from the nanowire; thus providing a mechanism for tuning the carrier behavior between 1D and 2D conductivity. Furthermore, our work provides insight into the creation and manipulation of charge density at an oxide heterostructure interface and therefore may be beneficial for future nanoelectronic devices and for the engineering of novel quantum phases.« less

Optical conductivity of partially oxidized graphene from first principles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasehnia, F., E-mail: f.nasehnia@gmail.com; Seifi, M., E-mail: Seifi@guilan.ac.ir

2015-07-07

We investigate the geometry, electronic structure, and optical properties of partially oxidized graphene using density functional theory. Our calculations show that oxygen atoms are chemisorbed on graphene plane and distort carbon atoms vertically, with almost no change in the in-plane structure. The ground state configurations for different oxygen coverages ranging from 2% to 50% (O/C ratio) are calculated and show the strong tendency of oxygen adatoms to aggregate and form discrete islands on graphene plane. It is found that the opened band gap due to oxygen functionalization depends on the oxygen density and the adsorption configuration. The gap is notmore » significant for oxygen densities lower than 8%. The optical conductivities are calculated in the infrared, visible, and ultraviolet regions and show different characteristic features depending on the degree of oxidation. These results imply that optical measurement techniques can be employed to monitor oxidation (or reduction) process as contact-free methods.« less

Huge photoresistance in transparent and conductive indium titanium oxide films prepared by electron beam-physical vapor deposition.

PubMed

Martínez-Morillas, Rocío; Ramírez, Rafael; Sánchez-Marcos, Jorge; Fonda, Emiliano; de Andrés, Alicia; Prieto, Carlos

2014-02-12

Transparent and conductive indium titanium oxide (ITiO) films have been obtained by electron beam physical vapour deposition with Ti content from 5 at % up to 28 at %. X-ray absorption spectroscopy techniques have been used to identify the local environment of Ti ions. Even at the lowest concentrations Ti is not incorporated into the In2O3 structure but forms clusters of a Ti-In mixed oxide that present a distorted rutile TiO2 short-range order. The optical transmittance of the annealed samples reaches 95 % and no significant variation of the gap energy (around 3.7 eV) is observed with Ti content. The electronic conductivity under light irradiation is studied evidencing a huge photo-resistance in the samples with Ti content above 22 at % reaching more than two orders of magnitude for the 26 at % Ti under illumination with few μW/cm(2) at 365 nm. Hall and conductivity results are analyzed using a model that takes into account both electron and hole carriers as well as the conductivity enhancement by carrier photogeneration. The electron carrier density decreases with Ti content while its mobility increases up to values of 1000 cm(2)/(V s). Oxygen annealed ITiO films obtained by this technique with Ti content below 10 at % have properties adequate as transparent semiconductors and those with Ti content higher than 22 at % have exceptional photoresistive properties relevant for numerous applications.

Enhanced energy density and thermal conductivity in poly(fluorovinylidene-co-hexafluoropropylene) nanocomposites incorporated with boron nitride nanosheets exfoliated under assistance of hyperbranched polyethylene.

PubMed

Ye, Huijian; Lu, Tiemei; Xu, Chunfeng; Zhong, Mingqiang; Xu, Lixin

2018-03-02

Polymer dielectric film with a large dielectric constant, high energy density and enhanced thermal conductivity are of significance for the development of impulse capacitors. However, the fabrication of polymer dielectrics combining high energy density and thermal conductivity is still a challenge at the moment. Here we demonstrate the facile exfoliation of hexagonal boron nitride nanosheets (BNNSs) in common organic solvents under sonication with the assistance of hyperbranched polyethylene (HBPE). The noncovalent CH-π interactions between the nanosheets and HBPE ensure the dispersion of BNNSs in organic solvents with high concentrations, because of the highly branched chain structure of HBPE. Subsequently, the resultant BNNSs with a few defects are distributed uniformly in the poly(fluorovinylidene-co-hexafluoropropylene) (P(VDF-HFP)) nanocomposite films prepared via simple solution casting. The BNNS/P(VDF-HFP) nanocomposite exhibits outstanding dielectric properties, high energy density and high thermal conductivity. The dielectric constant of the 0.5 wt% nanocomposite film is 35.5 at 100 Hz with an energy density of 5.6 J cm -3 at 325 MV m -1 and a high charge-discharge efficiency of 79% due to the depression of the charge injection and chemical species ionization in a high field. Moreover, a thermal conductivity of 1.0 wt% nanocomposite film reaches 0.91 W·m -1  · K -1 , which is 3.13 times higher than that of the fluoropolymer matrix. With dipole accumulation and orientation in the interfacial zone, lightweight, flexible BNNS/P(VDF-HFP) nanocomposite films with high charge-discharge performance and thermal conductivity, exhibit promising applications in relatively high-temperature electronics and energy storage devices.

Enhanced energy density and thermal conductivity in poly(fluorovinylidene-co-hexafluoropropylene) nanocomposites incorporated with boron nitride nanosheets exfoliated under assistance of hyperbranched polyethylene

NASA Astrophysics Data System (ADS)

Ye, Huijian; Lu, Tiemei; Xu, Chunfeng; Zhong, Mingqiang; Xu, Lixin

2018-03-01

Polymer dielectric film with a large dielectric constant, high energy density and enhanced thermal conductivity are of significance for the development of impulse capacitors. However, the fabrication of polymer dielectrics combining high energy density and thermal conductivity is still a challenge at the moment. Here we demonstrate the facile exfoliation of hexagonal boron nitride nanosheets (BNNSs) in common organic solvents under sonication with the assistance of hyperbranched polyethylene (HBPE). The noncovalent CH-π interactions between the nanosheets and HBPE ensure the dispersion of BNNSs in organic solvents with high concentrations, because of the highly branched chain structure of HBPE. Subsequently, the resultant BNNSs with a few defects are distributed uniformly in the poly(fluorovinylidene-co-hexafluoropropylene) (P(VDF-HFP)) nanocomposite films prepared via simple solution casting. The BNNS/P(VDF-HFP) nanocomposite exhibits outstanding dielectric properties, high energy density and high thermal conductivity. The dielectric constant of the 0.5 wt% nanocomposite film is 35.5 at 100 Hz with an energy density of 5.6 J cm-3 at 325 MV m-1 and a high charge-discharge efficiency of 79% due to the depression of the charge injection and chemical species ionization in a high field. Moreover, a thermal conductivity of 1.0 wt% nanocomposite film reaches 0.91 W·m-1 · K-1, which is 3.13 times higher than that of the fluoropolymer matrix. With dipole accumulation and orientation in the interfacial zone, lightweight, flexible BNNS/P(VDF-HFP) nanocomposite films with high charge-discharge performance and thermal conductivity, exhibit promising applications in relatively high-temperature electronics and energy storage devices.

The Effects of Thunderstorm Static and Quasi-Static Electric Fields on the Lower Ionosphere

NASA Astrophysics Data System (ADS)

Salem, Mohammad Ahmad

Thunderstorms and their lightning discharges are of great interest to many areas of geophysics and atmospheric electricity. A thunderstorm is an electric generator; it can produce both electrostatic and quasi-electrostatic fields in the overhead atmospheric D region. The D region is the lower part of the ionosphere that extends from about 40-90 km altitude where the electrons and ions are sufficient enough to affect the propagation of radio waves. In contrast to the electrostatic field, the quasi-electrostatic fields can be much stronger in magnitude, but shorter in duration, and can trigger halos. A halo is one type of the transient luminous events (TLEs) and typically appears within 1-2 ms after an intense cloud to ground lightning discharge. It looks like a relatively homogeneous glow in the shape of a pancake that is centered around 75-80 km altitude with a horizontal extent of tens of kilometers and vertical thickness of several kilometers. The goals of this dissertation research are to investigate the electrical effects of thunderstorm electrostatic and quasi-electrostatic fields on the nighttime lower ionosphere, and their covert relation to the formation of atmospheric halos. This work entails numerical and theoretical modeling analyses, and comparison of current theory and simulation results with the actual observations. For the first part of this study we have demonstrated that, under steady state conditions, electrostatic fields of <0.4Ek values (not strong enough to produce TLEs) can be established in the lower ionosphere due to underlying thunderstorms. We utilized the simplified nighttime ion chemistry model described in the work of Liu [2012] to investigate how these fields affect the lower ionosphere ion density profile. The three-body electron attachment, through which electrons can be converted to negative ions, is the only process whose rate constant depends on the field values within the above-mentioned limit. As a result of the variation of the rate constant with the electric field, the nighttime steady state electron density profile can be reduced by ˜40% or enhanced by a factor of ˜6. We have improved our model in order to self-consistently calculate the steady state conductivity of the lower ionosphere above a thunderstorm. The new model takes into account the heating effects of thunderstorm electrostatic fields on the free electrons. The modeling results indicate that under steady state condition, although the electron density is generally increased, the nighttime lower ionospheric conductivity can be reduced by up to 1-2 orders of magnitude because electron mobility is significantly reduced due to the electron heating effect. Because of this reduction, it is found that for a typical ionospheric density profile, the resulting changes in the reflection heights of ELF and VLF waves are 5 and 2 km, respectively. In the second part of this dissertation, a one-dimensional plasma discharge fluid model is developed to study the response of the nighttime lower ionosphere to the quasi-electrostatic field produced by cloud-to-ground lightning flashes. When the quasi-electrostatic field reaches and exceeds about E k, a halo can be triggered in the lower ionosphere. The modeling results indicate that the ionospheric perturbation is determined by the ambient ionospheric density profile, the charge. moment change, and charge transfer time. Tenuous ambient profiles result in larger changes in the ionospheric electron density. Cloud-to-ground lightning discharges, with larger charge moment changes and shorter charge transfer times, result in a larger change in the ionospheric electron density. In particular, the enhancement in the lower ionospheric electron density due to impulsive negative cloud-to-ground lightning flashes has been investigated. It is found that the enhancement can reach up to about 3 orders of magnitude above ˜70 km altitude in a few seconds. Below ˜75 km altitude, this enhancement recovers in a few seconds due to the fast electron attachment process. The recovery time of the electron enhancement above ˜75 km altitude is controlled by a slower recombination process; it depends on the ambient density profile and can last for tens of minutes to hours. Finally, the modeling results of the lower ionosphere recovery time are analyzed to investigate the role of halos in producing early VLF events with long recovery time. It is found that these events can be explained when sufficient ionization is produced around ˜80 km altitude. Such ionization can be produced by the impact of impulsive negative cloud-to-ground lightning flashes with a relatively large charge moment change on a tenuous ionospheric density profile.

Single Crystal Growth, Resistivity, and Electronic Structure of the Weyl Semimetals NbP and TaP

DOE PAGES

Sapkota, Deepak; Mukherjee, Rupam; Mandrus, David

2016-12-06

We have successfully synthesized niobium monophosphide and tantalum monophosphide crystals by a chemical vapor transport technique. We report resistivity vs. temperature of both materials in the temperature range from 2 K to 300 K. We have also performed electronic structure calculations and present the band structure and density of states of these two compounds. The calculations show that both compounds are semimetals, as their conduction and valence bands overlap near the Fermi energy.

Aspects of electron transport in zigzag graphene nanoribbons

NASA Astrophysics Data System (ADS)

Bhalla, Pankaj; Pratap, Surender

2018-05-01

In this paper, we investigate the aspects of electron transport in the zigzag graphene nanoribbons (ZGNRs) using the nonequilibrium Green’s function (NEGF) formalism. The latter is an esoteric tool in mesoscopic physics. It is used to perform an analysis of ZGNRs by considering potential well. Within this potential, the dependence of transmission coefficient, local density of states (LDOS) and electron transport properties on number of atoms per unit cell is discussed. It is observed that there is an increment in electron and thermal conductance with increasing number of atoms. In addition to these properties, the dependence of same is also studied in figure of merit. The results infer that the contribution of electrons to enhance the figure of merit is important above the crossover temperature.

Thermodynamic properties and transport coefficients of two-temperature helium thermal plasmas

NASA Astrophysics Data System (ADS)

Guo, Xiaoxue; Murphy, Anthony B.; Li, Xingwen

2017-03-01

Helium thermal plasmas are in widespread use in arc welding and many other industrial applications. Simulation of these processes relies on accurate plasma property data, such as plasma composition, thermodynamic properties and transport coefficients. Departures from LTE (local thermodynamic equilibrium) generally occur in some regions of helium plasmas. In this paper, properties are calculated allowing for different values of the electron temperature, T e, and heavy-species temperature, T h, at atmospheric pressure from 300 K to 30 000 K. The plasma composition is first calculated using the mass action law, and the two-temperature thermodynamic properties are then derived. The viscosity, diffusion coefficients, electrical conductivity and thermal conductivity of the two-temperature helium thermal plasma are obtained using a recently-developed method that retains coupling between electrons and heavy species by including the electron-heavy-species collision term in the heavy-species Boltzmann equation. It is shown that the viscosity and the diffusion coefficients strongly depend on non-equilibrium ratio θ (θ ={{T}\\text{e}}/{{T}\\text{h}} ), through the plasma composition and the collision integrals. The electrical conductivity, which depends on the electron number density and ordinary diffusion coefficients, and the thermal conductivity have similar dependencies. The choice of definition of the Debye length is shown to affect the electrical conductivity significantly for θ  >  1. By comparing with literature data, it is shown that the coupling between electrons and heavy species has a significant influence on the electrical conductivity, but not on the viscosity. Plasma properties are tabulated in the supplementary data.

Determination of equilibrium electron temperature and times using an electron swarm model with BOLSIG+ calculated collision frequencies and rate coefficients

DOE PAGES

Pusateri, Elise N.; Morris, Heidi E.; Nelson, Eric M.; ...

2015-08-04

Electromagnetic pulse (EMP) events produce low-energy conduction electrons from Compton electron or photoelectron ionizations with air. It is important to understand how conduction electrons interact with air in order to accurately predict EMP evolution and propagation. An electron swarm model can be used to monitor the time evolution of conduction electrons in an environment characterized by electric field and pressure. Here a swarm model is developed that is based on the coupled ordinary differential equations (ODEs) described by Higgins et al. (1973), hereinafter HLO. The ODEs characterize the swarm electric field, electron temperature, electron number density, and drift velocity. Importantmore » swarm parameters, the momentum transfer collision frequency, energy transfer collision frequency, and ionization rate, are calculated and compared to the previously reported fitted functions given in HLO. These swarm parameters are found using BOLSIG+, a two term Boltzmann solver developed by Hagelaar and Pitchford (2005), which utilizes updated cross sections from the LXcat website created by Pancheshnyi et al. (2012). We validate the swarm model by comparing to experimental effective ionization coefficient data in Dutton (1975) and drift velocity data in Ruiz-Vargas et al. (2010). In addition, we report on electron equilibrium temperatures and times for a uniform electric field of 1 StatV/cm for atmospheric heights from 0 to 40 km. We show that the equilibrium temperature and time are sensitive to the modifications in the collision frequencies and ionization rate based on the updated electron interaction cross sections.« less

From tunneling to contact: Inelastic signals in an atomic gold junction from first principles

NASA Astrophysics Data System (ADS)

Frederiksen, Thomas; Lorente, Nicolás; Paulsson, Magnus; Brandbyge, Mads

2007-06-01

The evolution of electron conductance in the presence of inelastic effects is studied as an atomic gold contact is formed evolving from a low-conductance regime (tunneling) to a high-conductance regime (contact). In order to characterize each regime, we perform density-functional theory (DFT) calculations to study the geometric and electronic structures, together with the strength of the atomic bonds and the associated vibrational frequencies. The conductance is calculated by, first, evaluating the transmission of electrons through the system and, second, by calculating the conductance change due to the excitation of vibrations. As found in previous studies [Paulsson , Phys. Rev. B 72, 201101(R) (2005)], the change in conductance due to inelastic effects permits us to characterize the crossover from tunneling to contact. The most notorious effect is the crossover from an increase in conductance in the tunneling regime to a decrease in conductance in the contact regime when the bias voltage matches a vibrational threshold. Our DFT-based calculations actually show that the effect of vibrational modes in electron conductance is rather complex, in particular, when modes localized in the contact region are permitted to extend into the electrodes. As an example, we find that certain modes can give rise to decreases in conductance when in the tunneling regime, opposite to the above-mentioned result. Whereas details in the inelastic spectrum depend on the size of the vibrational region, we show that the overall change in conductance is quantitatively well approximated by the simplest calculation where only the apex atoms are allowed to vibrate. Our study is completed by the application of a simplified model where the relevant parameters are obtained from the above DFT-based calculations.

Electronic Properties of Carbon Nanotubes and Junctions

NASA Technical Reports Server (NTRS)

Anantram, M. P.; Han, Jie; Yang, Liu; Govindan, T. R.; Jaffe, R.; Saini, Subhash (Technical Monitor)

1998-01-01

Metallic and semiconducting Single Wall Carbon Nanotubes (CNT) have recently been characterized using scanning tunneling microscopy (STM) and the manipulation of individual CNT has been demonstrated. These developments make the prospect of using CNT as molecular wires and possibly as electronic devices an even more interesting one. We have been modeling various electronic properties such as the density of states and the transmission coefficient of CNT wires and junctions. These studies involve first calculating the stability of junctions using molecular dynamics simulations and then calculating the electronic properties using a pi-electron tight binding Hamiltonian. We have developed the expertise to calculate the electronic properties of both finite-sized CNT and CNT systems with semi-infinite boundary conditions. In this poster, we will present an overview of some of our results. The electronic application of CNT that is most promising at this time is their use as molecular wires. The conductance can however be greatly reduced because of reflection due to defects and contacts. We have modeled the transmission through CNT in the presence of two types of defects: weak uniform disorder and strong isolated scatterers. We find that the conductance is affected in significantly different manners due to these defects Junctions of CNT have also been imaged using STM. This makes it essential to derive rules for the formation of junctions between tubes of different chirality, study their relative energies and electronic properties. We have generalized the rules for connecting two different CNT and have calculated the transmission and density of states through CNT junctions. Metallic and semiconducting CNT can be joined to form a stable junction and their current versus voltage characteristics are asymmetric. CNT are deformed by the application of external forces including interactions with a substrate or other CNT. In many experiments, these deformation are expected to occur naturally. We will present some preliminary results of our calculations of the modification of CNT electronic properties as a result of deformations.

Optoelectronics and defect levels in hydroxyapatite by first-principles.

PubMed

Avakyan, Leon A; Paramonova, Ekaterina V; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S; Bugaev, Lusegen A

2018-04-21

Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

Optoelectronics and defect levels in hydroxyapatite by first-principles

NASA Astrophysics Data System (ADS)

Avakyan, Leon A.; Paramonova, Ekaterina V.; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S.; Bugaev, Lusegen A.

2018-04-01

Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

Analysis of Scanned Probe Images for Magnetic Focusing in Graphene

DOE PAGES

Bhandari, Sagar; Lee, Gil-Ho; Kim, Philip; ...

2017-02-21

We have used cooled scanning probe microscopy (SPM) to study electron motion in nanoscale devices. The charged tip of the microscope was raster-scanned at constant height above the surface as the conductance of the device was measured. The image charge scatters electrons away, changing the path of electrons through the sample. Using this technique, we imaged cyclotron orbits that flow between two narrow contacts in the magnetic focusing regime for ballistic hBN–graphene–hBN devices. We present herein an analysis of our magnetic focusing imaging results based on the effects of the tip-created charge density dip on the motion of ballistic electrons.more » The density dip locally reduces the Fermi energy, creating a force that pushes electrons away from the tip. When the tip is above the cyclotron orbit, electrons are deflected away from the receiving contact, creating an image by reducing the transmission between contacts. The data and our analysis suggest that the graphene edge is rather rough, and electrons scattering off the edge bounce in random directions. However, when the tip is close to the edge, it can enhance transmission by bouncing electrons away from the edge, toward the receiving contact. Our results demonstrate that cooled SPM is a promising tool to investigate the motion of electrons in ballistic graphene devices.« less

Analysis of Scanned Probe Images for Magnetic Focusing in Graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhandari, Sagar; Lee, Gil-Ho; Kim, Philip

We have used cooled scanning probe microscopy (SPM) to study electron motion in nanoscale devices. The charged tip of the microscope was raster-scanned at constant height above the surface as the conductance of the device was measured. The image charge scatters electrons away, changing the path of electrons through the sample. Using this technique, we imaged cyclotron orbits that flow between two narrow contacts in the magnetic focusing regime for ballistic hBN–graphene–hBN devices. We present herein an analysis of our magnetic focusing imaging results based on the effects of the tip-created charge density dip on the motion of ballistic electrons.more » The density dip locally reduces the Fermi energy, creating a force that pushes electrons away from the tip. When the tip is above the cyclotron orbit, electrons are deflected away from the receiving contact, creating an image by reducing the transmission between contacts. The data and our analysis suggest that the graphene edge is rather rough, and electrons scattering off the edge bounce in random directions. However, when the tip is close to the edge, it can enhance transmission by bouncing electrons away from the edge, toward the receiving contact. Our results demonstrate that cooled SPM is a promising tool to investigate the motion of electrons in ballistic graphene devices.« less

Electronic properties of crystalline Ge1-xSbxTey thin films

NASA Astrophysics Data System (ADS)

Fallica, Roberto; Volpe, Flavio; Longo, Massimo; Wiemer, Claudia; Salicio, Olivier; Abrutis, Adulfas

2012-09-01

Ge1-xSbxTey thin films, grown by metalorganic and hot-wire liquid injection chemical vapor deposition in different crystalline phases, are investigated to determine resistivity, carrier density, and carrier mobility in the 4.2-300 K temperature range. It is found that all these chalcogenides exhibit p-type conduction, high carrier density (>2 . 1020 cm-3), and no carrier freeze-out, regardless of composition. Low-temperature mobility data show that both chemical composition and growth technique affect the defect density and, in turn, the carrier scattering mechanisms. In this regard, charge carrier mobility is analyzed according to semi-empirical scattering models and an interpretation is provided.

Alkaline Capacitors Based on Nitride Nanoparticles

NASA Technical Reports Server (NTRS)

Aldissi, Matt

2003-01-01

High-energy-density alkaline electrochemical capacitors based on electrodes made of transition-metal nitride nanoparticles are undergoing development. Transition- metal nitrides (in particular, Fe3N and TiN) offer a desirable combination of high electrical conductivity and electrochemical stability in aqueous alkaline electrolytes like KOH. The high energy densities of these capacitors are attributable mainly to their high capacitance densities, which, in turn, are attributable mainly to the large specific surface areas of the electrode nanoparticles. Capacitors of this type could be useful as energy-storage components in such diverse equipment as digital communication systems, implanted medical devices, computers, portable consumer electronic devices, and electric vehicles.

The role of Hurst exponent on cold field electron emission from conducting materials: from electric field distribution to Fowler-Nordheim plots

PubMed Central

de Assis, T. A.

2015-01-01

This work considers the effects of the Hurst exponent (H) on the local electric field distribution and the slope of the Fowler-Nordheim (FN) plot when considering the cold field electron emission properties of rough Large-Area Conducting Field Emitter Surfaces (LACFESs). A LACFES is represented by a self-affine Weierstrass-Mandelbrot function in a given spatial direction. For 0.1 ≤ H < 0.5, the local electric field distribution exhibits two clear exponential regimes. Moreover, a scaling between the macroscopic current density () and the characteristic kernel current density (), , with an H-dependent exponent , has been found. This feature, which is less pronounced (but not absent) in the range where more smooth surfaces have been found (), is a consequence of the dependency between the area efficiency of emission of a LACFES and the macroscopic electric field, which is often neglected in the interpretation of cold field electron emission experiments. Considering the recent developments in orthodox field emission theory, we show that the exponent must be considered when calculating the slope characterization parameter (SCP) and thus provides a relevant method of more precisely extracting the characteristic field enhancement factor from the slope of the FN plot. PMID:26035290

Analyzing the dependence of oxygen incorporation current density on overpotential and oxygen partial pressure in mixed conducting oxide electrodes.

PubMed

Guan, Zixuan; Chen, Di; Chueh, William C

2017-08-30

The oxygen incorporation reaction, which involves the transformation of an oxygen gas molecule to two lattice oxygen ions in a mixed ionic and electronic conducting solid, is a ubiquitous and fundamental reaction in solid-state electrochemistry. To understand the reaction pathway and to identify the rate-determining step, near-equilibrium measurements have been employed to quantify the exchange coefficients as a function of oxygen partial pressure and temperature. However, because the exchange coefficient contains contributions from both forward and reverse reaction rate constants and depends on both oxygen partial pressure and oxygen fugacity in the solid, unique and definitive mechanistic assessment has been challenging. In this work, we derive a current density equation as a function of both oxygen partial pressure and overpotential, and consider both near and far from equilibrium limits. Rather than considering specific reaction pathways, we generalize the multi-step oxygen incorporation reaction into the rate-determining step, preceding and following quasi-equilibrium steps, and consider the number of oxygen ions and electrons involved in each. By evaluating the dependence of current density on oxygen partial pressure and overpotential separately, one obtains the reaction orders for oxygen gas molecules and for solid-state species in the electrode. We simulated the oxygen incorporation current density-overpotential curves for praseodymium-doped ceria for various candidate rate-determining steps. This work highlights a promising method for studying the exchange kinetics far away from equilibrium.

Electronic Structure of GdCuGe Intermetallic Compound

NASA Astrophysics Data System (ADS)

Lukoyanov, A. V.; Knyazev, Yu. V.; Kuz'min, Yu. I.

2018-04-01

The electronic structure of GdCuGe intermetallic compound has been studied. Spin-polarized energy spectrum calculations have been performed by the band method with allowance for strong electron correlations in the 4 f-shell of gadolinium ions. Antiferromagnetic ordering of GdCuGe at low temperatures has been obtained in a theoretical calculation, with the value of the effective magnetic moment of gadolinium ions reproduced in fair agreement with experimental data. The electronic density of states has been analyzed. An optical conductivity spectrum has been calculated for GdCuGe; it reveals specific features that are analogous to the ones discovered previously in the GdCuSi compound with a similar hexagonal structure.

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Talapin, Dmitri V.; Murray, Christopher B.

2005-10-01

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically ``activated'' to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 × 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

Study of photoirradiation for YBa 2Cu 3O 6+ x compounds and the electron structure by positron experiment

NASA Astrophysics Data System (ADS)

Guosheng, Cheng; Jiaxiang, Shang; Xigui, Li; xianqi, Dai; Xizhong, Wang; Jincang, Zhang

1997-08-01

We present positron lifetime data of YBa 2Cu 3O 6+ x (x=0.92, 0.43) compounds for different photo-irradiation time. It is given that change of the local electron density and vacancy concentration with photoirradiation time. It is found that there is transform at the electronic structure of CuO chains. We also have discussed the effect of photoirradiations time on the electronic structure of YBa 2Cu 3O 6+ x systems and their charge reservoir layer and CuO 2 plane conduction.layer. The positron experimental results support the model of photoinduced oxygen-diffusion mechanism.

Probing the Electronic Structure of - and Electron-Doped High-Temperature Superconductors with Photoemission and X-Ray Absorption Spectroscopies

NASA Astrophysics Data System (ADS)

Lederman, Eli R.

1990-01-01

The electronic structures of hole- and electron -doped high temperature superconductors have been probed using x-ray absorption near-edge spectroscopy (XANES) and photoelectron emission spectroscopy (PES). These measurements have been performed on RBa_2Cu _3O_{rm 7-y} , La_{rm 2-x}Sr _{rm x}CuO _4 and Ln_{rm 2 -x}Ce_{rm x} CuO_{rm 4} for R = Y, Eu and Ln = Nd, Pr and Sm. The parameters x and y have been varied to include a range of hole and electron carrier densities and the undoped parent compounds. Previous XANES and PES results have indicated that unoccupied states of O 2p character can be associated with the carriers in the materials RBa_2 Cu_3O_{ rm 7-y} and La_{ rm 2-x}Sr_{rm x}CuO_4 and that the density of holes increases with O and Sr content, respectively. Conduction was hole-based in all known high-T_{ rm c} cuprates until the recent discovery of superconductivity in Ln_{rm 2-x}Ce_{rm x} CuO_4. Hall coefficient measurements have suggested that the carriers in this system are electrons added with Ce doping. It has been anticipated that these electron-doped materials will provide an important test for models of high temperature superconductivity. PES measurements are presented that show significant Cu 3d character in the valence band of these electron-based materials, but that the Cu^{2+} /Cu^{1+} ratio is unchanged by the level of Ce doping, indicating that doped electrons are itinerant rather than highly correlated. Resonant photoemission from the valence band indicates the presence of unoccupied O 2p states, but these holes are less abundant than in the hole-doped materials. Measurements of XANES at the O 1s edge suggest that unoccupied states of O 2p character in the electron -doped materials are not related to conduction in a simple way. The density of these holes is shown to decrease upon Ce doping and the process of reduction, despite the fact that both are necessary of superconductivity. Furthermore, whereas the O 2p holes are at E_{rm F} in the hole-doped materials, they are ~1 eV above E_{ rm F} in their electron-doped counterparts. A schematic of the band structure is proposed on the basis of these spectroscopic measurements.

Electron temperatures within magnetic clouds between 2 and 4 AU: Voyager 2 observations

NASA Astrophysics Data System (ADS)

Sittler, E. C.; Burlaga, L. F.

1998-08-01

We have performed an analysis of Voyager 2 plasma electron observations within magnetic clouds between 2 and 4 AU identified by Burlaga and Behannon [1982]. The analysis has been confined to three of the magnetic clouds identified by Burlaga and Behannon that had high-quality data. The general properties of the plasma electrons within a magnetic cloud are that (1) the moment electron temperature anticorrelates with the electron density within the cloud, (2) the ratio Te/Tp tends to be >1, and (3) on average, Te/Tp~7.0. All three results are consistent with previous electron observations within magnetic clouds. Detailed analyses of the core and halo populations within the magnetic clouds show no evidence of either an anticorrelation between the core temperature TC and the electron density Ne or an anticorrelation between the halo temperature TH and the electron density. Within the magnetic clouds the halo component can contribute more than 50% of the electron pressure. The anticorrelation of Te relative to Ne can be traced to the density of the halo component relative to the density of the core component. The core electrons dominate the electron density. When the density goes up, the halo electrons contribute less to the electron pressure, so we get a lower Te. When the electron density goes down, the halo electrons contribute more to the electron pressure, and Te goes up. We find a relation between the electron pressure and density of the form Pe=αNeγ with γ~0.5.

Novel lithium titanate-graphene hybrid containing two graphene conductive frameworks for lithium-ion battery with excellent electrochemical performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruiyi, Li; Tengyuan, Chen; Beibei, Sun

Graphical abstract: We developed a new Novel lithium titanate-graphene nanohybrid containing two graphene conductive frameworks. The unique architecture creates fast electron transfer and rapid mass transport of electrolyte. The hybrid electrode provides excellent electrochemical performances for lithium-ion batteries, including high specific capacity, outstanding rate capability and intriguing cycling stability. - Highlights: • We reported a new LTO-graphene nanohybrid containing two graphene conductive frameworks. • One graphene framework greatly improves the electrical conductivity of LTO crystal. • Another graphene framework enhances electrical conductivity of between LTO crystals and electrolyte transport. • The unique architecture creates big tap density, ultrafast electron transfermore » and rapid mass transport. • The hybrid electrode provides excellent electrochemical performance for lithium-ion batteries. - ABSTRACT: The paper reported the synthesis of lithium titanate(LTO)-graphene hybrid containing two graphene conductive frameworks (G@LTO@G). Tetrabutyl titanate and graphene were dispersed in tertbutanol and heated to reflux state by microwave irradiation. Followed by adding lithium acetate to produce LTO precursor/graphene (p-LTO/G). The resulting p-LTO/G offers homogeneous morphology and ultra small size. All graphene sheets were buried in the spherical agglomerates composed of primitive particles through the second agglomeration. The p-LTO/G was calcined to LTO@graphene (LTO@G). To obtain G@LTO@G, the LTO@G was further hybridized with graphene. The as-prepared G@LTO@G shows well-defined three-dimensional structure and hierarchical porous distribution. Its unique architecture creates big tap density, fast electron transfer and rapid electrolyte transport. As a result, the G@LTO@G provides high specific capacity (175.2 mA h g{sup −1} and 293.5 mA cm{sup −3}), outstanding rate capability (155.7 mAh g{sup −1} at 10C) and intriguing cycling stability (97.2% capacity retention at 5C after 1000 cycles)« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiang, Yet-Ming; Carter, Craig W.; Ho, Bryan Y.

Redox flow devices are described in which at least one of the positive electrode or negative electrode-active materials is a semi-solid or is a condensed ion-storing electroactive material, and in which at least one of the electrode-active materials is transported to and from an assembly at which the electrochemical reaction occurs, producing electrical energy. The electronic conductivity of the semi-solid is increased by the addition of conductive particles to suspensions and/or via the surface modification of the solid in semi-solids (e.g., by coating the solid with a more electron conductive coating material to increase the power of the device). Highmore » energy density and high power redox flow devices are disclosed. The redox flow devices described herein can also include one or more inventive design features. In addition, inventive chemistries for use in redox flow devices are also described.« less

Carbon nanotube conditioning: ab initio simulations of the effect of defects and doping on the electronic properties of carbon nanotube systems.

NASA Astrophysics Data System (ADS)

Soto, Matias; Barrera, Enrique

Using carbon nanotubes for electrical conduction applications at the macroscale has proven to be a difficult task, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route and the topic of this work is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present, so that the electrical conduction of a bundle or even wire may be enhanced. We used density functional theory calculations to study the effect of defects and doping on the electronic structure of metallic, semi-metal and semiconducting carbon nanotubes in order to gain a clear picture of their properties. Additionally, using dopants to increase the conductance across a junction between two carbon nanotubes was studied for different configurations. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics. Partial funding was received from CONACyT Scholarship 314419.

Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamand, S.M., E-mail: soran.mamand@univsul.net; Omar, M.S.; Muhammad, A.J.

2012-05-15

Graphical abstract: Temperature dependence of calculated lattice thermal conductivity of Wurtzite GaN nanowires. Highlights: Black-Right-Pointing-Pointer A modified Callaway model is used to calculate lattice thermal conductivity of Wurtzite GaN nanowires. Black-Right-Pointing-Pointer A direct method is used to calculate phonon group velocity for these nanowires. Black-Right-Pointing-Pointer 3-Gruneisen parameter, surface roughness, and dislocations are successfully investigated. Black-Right-Pointing-Pointer Dislocation densities are decreases with the decrease of wires diameter. -- Abstract: A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2-300 K, was performed using a modified Callaway model.more » Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 10{sup 14} m{sup -2} the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 10{sup 14} m{sup -2}, lattice thermal conductivity would be independent of that.« less

Laboratory Photoionization Fronts in Nitrogen Gas: A Numerical Feasibility and Parameter Study

NASA Astrophysics Data System (ADS)

Gray, William J.; Keiter, P. A.; Lefevre, H.; Patterson, C. R.; Davis, J. S.; van Der Holst, B.; Powell, K. G.; Drake, R. P.

2018-05-01

Photoionization fronts play a dominant role in many astrophysical situations but remain difficult to achieve in a laboratory experiment. We present the results from a computational parameter study evaluating the feasibility of the photoionization experiment presented in the design paper by Drake et al. in which a photoionization front is generated in a nitrogen medium. The nitrogen gas density and the Planckian radiation temperature of the X-ray source define each simulation. Simulations modeled experiments in which the X-ray flux is generated by a laser-heated gold foil, suitable for experiments using many kJ of laser energy, and experiments in which the flux is generated by a “z-pinch” device, which implodes a cylindrical shell of conducting wires. The models are run using CRASH, our block-adaptive-mesh code for multimaterial radiation hydrodynamics. The radiative transfer model uses multigroup, flux-limited diffusion with 30 radiation groups. In addition, electron heat conduction is modeled using a single-group, flux-limited diffusion. In the theory, a photoionization front can exist only when the ratios of the electron recombination rate to the photoionization rate and the electron-impact ionization rate to the recombination rate lie in certain ranges. These ratios are computed for several ionization states of nitrogen. Photoionization fronts are found to exist for laser-driven models with moderate nitrogen densities (∼1021 cm‑3) and radiation temperatures above 90 eV. For “z-pinch”-driven models, lower nitrogen densities are preferred (<1021 cm‑3). We conclude that the proposed experiments are likely to generate photoionization fronts.

Electron transport through magnetic quantum point contacts

NASA Astrophysics Data System (ADS)

Day, Timothy Ellis

Spin-based electronics, or spintronics, has generated a great deal of interest as a possible next-generation integrated circuit technology. Recent experimental and theoretical work has shown that these devices could exhibit increased processing speed, decreased power consumption, and increased integration densities as compared with conventional semiconductor devices. The spintronic device that was designed, fabricated, and tested throughout the course of this work aimed to study the generation of spin-polarized currents in semiconductors using magnetic fringe fields. The device scheme relied on the Zeeman effect in combination with a quantum mechanical barrier to generate spin-polarized currents. The Zeeman effect was used to break the degeneracy of spin-up and spin-down electrons and the quantum mechanical potential to transmit one while rejecting the other. The design was dictated by the drive to maximize the strength of the magnetic fringe field and in turn maximize the energy separation of the two spin species. The device was fabricated using advanced techniques in semiconductor processing including electron beam lithography and DC magnetron sputtering. Measurements were performed in a 3He cryostat equipped with a superconducting magnet at temperatures below 300 mK. Preliminary characterization of the device revealed magnetoconductance oscillations produced by the effect of the transverse confining potential on the density of states and the mobility. Evidence of the effect of the magnetic fringe fields on the transport properties of electrons in the device were observed in multiple device measurements. An abrupt washout of the quantized conductance steps was observed over a minute range of the applied magnetic field. The washout was again observed as electrons were shifted closer to the magnetic gates. In addition, bias spectroscopy demonstrated that the washout occurred despite stronger electron confinement, as compared to a non-magnetic split-gate. Thus, the measurements indicated that conductance quantization breaks down in a non-uniform magnetic field, possibly due to changes to the stationary Landau states. It was also demonstrated that non-integer conductance plateaus at high source-drain bias are not caused by a macroscopic asymmetry in the potential drop.

Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

2011-07-01

We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

Validity criteria for Fermi’s golden rule scattering rates applied to metallic nanowires

NASA Astrophysics Data System (ADS)

Moors, Kristof; Sorée, Bart; Magnus, Wim

2016-09-01

Fermi’s golden rule underpins the investigation of mobile carriers propagating through various solids, being a standard tool to calculate their scattering rates. As such, it provides a perturbative estimate under the implicit assumption that the effect of the interaction Hamiltonian which causes the scattering events is sufficiently small. To check the validity of this assumption, we present a general framework to derive simple validity criteria in order to assess whether the scattering rates can be trusted for the system under consideration, given its statistical properties such as average size, electron density, impurity density et cetera. We derive concrete validity criteria for metallic nanowires with conduction electrons populating a single parabolic band subjected to different elastic scattering mechanisms: impurities, grain boundaries and surface roughness.

Electronic structure and magnetic properties of dilute U impurities in metals

NASA Astrophysics Data System (ADS)

Mohanta, S. K.; Cottenier, S.; Mishra, S. N.

2016-05-01

The electronic structure and magnetic moment of dilute U impurity in metallic hosts have been calculated from first principles. The calculations have been performed within local density approximation of the density functional theory using Augmented plane wave+local orbital (APW+lo) technique, taking account of spin-orbit coupling and Coulomb correlation through LDA+U approach. We present here our results for the local density of states, magnetic moment and hyperfine field calculated for an isolated U impurity embedded in hosts with sp-, d- and f-type conduction electrons. The results of our systematic study provide a comprehensive insight on the pressure dependence of 5f local magnetism in metallic systems. The unpolarized local density of states (LDOS), analyzed within the frame work of Stoner model suggest the occurrence of local moment for U in sp-elements, noble metals and f-block hosts like La, Ce, Lu and Th. In contrast, U is predicted to be nonmagnetic in most transition metal hosts except in Sc, Ti, Y, Zr, and Hf consistent with the results obtained from spin polarized calculation. The spin and orbital magnetic moments of U computed within the frame of LDA+U formalism show a scaling behavior with lattice compression. We have also computed the spin and orbital hyperfine fields and a detail analysis has been carried out. The host dependent trends for the magnetic moment, hyperfine field and 5f occupation reflect pressure induced change of electronic structure with U valency changing from 3+ to 4+ under lattice compression. In addition, we have made a detailed analysis of the impurity induced host spin polarization suggesting qualitatively different roles of f-band electrons on moment stability. The results presented in this work would be helpful towards understanding magnetism and spin fluctuation in U based alloys.

LaTiO3/KTaO3 interfaces: A new two-dimensional electron gas system

NASA Astrophysics Data System (ADS)

Zou, K.; Ismail-Beigi, Sohrab; Kisslinger, Kim; Shen, Xuan; Su, Dong; Walker, F. J.; Ahn, C. H.

2015-03-01

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO3, and a band insulator, KTaO3. For LaTiO3/KTaO3 interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO3-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm2/V s) of SrTiO3 at room temperature. By using KTaO3, we achieve mobilities in LaTiO3/KTaO3 interfaces as high as 21 cm2/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO3. By density functional theory, we attribute the higher mobility in KTaO3 2DEGs to the smaller effective mass for electrons in KTaO3.

Materials and techniques for spacecraft static charge control

NASA Technical Reports Server (NTRS)

Amore, L. J.; Eagles, A. E.

1977-01-01

An overview of the design, development, fabrication, and testing of transparent conductive coatings and conductive lattices deposited or formed on high resistivity spacecraft dielectric materials to obtain control static charge buildup on spacecraft external surfaces is presented. Fabrication techniques for the deposition of indium/tin oxide coatings and copper grid networks on Kapton and FEP Teflon films and special frit coatings for OSR and solar cell cover glasses are discussed. The techniques include sputtering, photoetching, silkscreening, and mechanical processes. A facility designed and built to simulate the electron plasma at geosynchronous altitudes is described along with test procedures. The results of material characterizations as well as electron irradiation aging effects in this facility for spacecraft polymers treated to control static charge are presented. The data presents results for electron beam energies up to 30 kV and electron current densities of 30 nA/cm squared. Parameters measured include secondary emission, surface leakage, and through the sample currents as a function of primary beam energy and voltage.

Acetylenic carbon allotrope

DOEpatents

Lagow, Richard J.

1998-01-01

A fourth allotrope of carbon, an acetylenic carbon allotrope, is described. The acetylenic carbon allotropes of the present invention are more soluble than the other known carbon allotropes in many common organic solvents and possesses other desirable characteristics, e.g. high electron density, ability to burn cleanly, and electrical conductive properties. Many uses for this fourth allotrope are described herein.

Acetylenic carbon allotrope

DOEpatents

Lagow, Richard J.

1999-01-01

A fourth allotrope of carbon, an acetylenic carbon allotrope, is described. The acetylenic carbon allotropes of the present invention are more soluble than the other known carbon allotropes in many common organic solvents and possesses other desirable characteristics, e.g. high electron density, ability to burn cleanly, and electrical conductive properties. Many uses for this fourth allotrope are described herein.

Understanding the inelastic electron-tunneling spectra of alkanedithiols on gold.

PubMed

Solomon, Gemma C; Gagliardi, Alessio; Pecchia, Alessandro; Frauenheim, Thomas; Di Carlo, Aldo; Reimers, Jeffrey R; Hush, Noel S

2006-03-07

We present results for a simulated inelastic electron-tunneling spectra (IETS) from calculations using the "gDFTB" code. The geometric and electronic structure is obtained from calculations using a local-basis density-functional scheme, and a nonequilibrium Green's function formalism is employed to deal with the transport aspects of the problem. The calculated spectrum of octanedithiol on gold(111) shows good agreement with experimental results and suggests further details in the assignment of such spectra. We show that some low-energy peaks, unassigned in the experimental spectrum, occur in a region where a number of molecular modes are predicted to be active, suggesting that these modes are the cause of the peaks rather than a matrix signal, as previously postulated. The simulations also reveal the qualitative nature of the processes dominating IETS. It is highly sensitive only to the vibrational motions that occur in the regions of the molecule where there is electron density in the low-voltage conduction channel. This result is illustrated with an examination of the predicted variation of IETS with binding site and alkane chain length.

Radiation-assisted grafting of vinylidene chloride onto high-density polyethylene

NASA Astrophysics Data System (ADS)

Nagesh, N.; Dokhale, P. A.; Bhoraskar, V. N.

1999-06-01

6 MeV electrons and Co-60 icons/Journals/Common/gamma" ALT="gamma" ALIGN="TOP"/>-rays were used for grafting vinylidene chloride (VDC) onto high-density polyethylene (HDPE) samples. The HDPE samples were immersed in vinylidene chloride and irradiated either with Co-60 icons/Journals/Common/gamma" ALT="gamma" ALIGN="TOP"/>-rays or with 6 MeV electrons. In both cases, the radiation dose was varied in the range 1.25-7.5 kGy. The grafted samples were characterized by IR spectroscopy to obtain information about the chemical bonds and with the 14 MeV neutron activation analysis technique for estimating the number of chlorine atoms. The formation of stable bonds between the VDC molecules and the polymer chains could be achieved either with 6 MeV electrons or with Co-60 icons/Journals/Common/gamma" ALT="gamma" ALIGN="TOP"/>-rays. Both the number of chlorine atoms and the sample-surface conductivity increased with the radiation dose but the increases achieved with 6 MeV electrons were greater than those achieved with Co-60 icons/Journals/Common/gamma" ALT="gamma" ALIGN="TOP"/>-rays.

Effective mass and Fermi surface complexity factor from ab initio band structure calculations

NASA Astrophysics Data System (ADS)

Gibbs, Zachary M.; Ricci, Francesco; Li, Guodong; Zhu, Hong; Persson, Kristin; Ceder, Gerbrand; Hautier, Geoffroy; Jain, Anubhav; Snyder, G. Jeffrey

2017-02-01

The effective mass is a convenient descriptor of the electronic band structure used to characterize the density of states and electron transport based on a free electron model. While effective mass is an excellent first-order descriptor in real systems, the exact value can have several definitions, each of which describe a different aspect of electron transport. Here we use Boltzmann transport calculations applied to ab initio band structures to extract a density-of-states effective mass from the Seebeck Coefficient and an inertial mass from the electrical conductivity to characterize the band structure irrespective of the exact scattering mechanism. We identify a Fermi Surface Complexity Factor: Nv*K* from the ratio of these two masses, which in simple cases depends on the number of Fermi surface pockets (Nv* ) and their anisotropy K*, both of which are beneficial to high thermoelectric performance as exemplified by the high values found in PbTe. The Fermi Surface Complexity factor can be used in high-throughput search of promising thermoelectric materials.

Dependence of electrical transport properties of CaO(CaMnO3)m (m = 1, 2, 3, ∞) thermoelectric oxides on lattice periodicity

NASA Astrophysics Data System (ADS)

Baranovskiy, Andrei; Amouyal, Yaron

2017-02-01

The electrical transport properties of CaO(CaMnO3)m (m = 1, 2, 3, ∞) compounds are studied applying the density functional theory (DFT) in terms of band structure at the vicinity of the Fermi level (EF). It is shown that the total density of states (DOS) values at EF increase with increase in the m-values, which implies an increase in the electrical conductivity, σ, with increasing m-values, in full accordance with experimental results. Additionally, the calculated values of the relative slopes of the DOS at EF correlate with the experimentally measured Seebeck coefficients. The electrical conductivity and Seebeck coefficients were calculated in the framework of the Boltzmann transport theory applying the constant relaxation time approximation. By the analysis of experimental and calculated σ(Τ) dependences, the electronic relaxation time and mean free path values were estimated. It is shown that the electrical transport is dominated by electron scattering on the boundaries between perovskite (CaMnO3) and Ca oxide (CaO) layers inside the crystal lattice.

Effects of Substrate and Post-Growth Treatments on the Microstructure and Properties of ZnO Thin Films Prepared by Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Haseman, Micah; Saadatkia, P.; Winarski, D. J.; Selim, F. A.; Leedy, K. D.; Tetlak, S.; Look, D. C.; Anwand, W.; Wagner, A.

2016-12-01

Aluminum-doped zinc oxide (ZnO:Al) thin films were synthesized by atomic layer deposition on silicon, quartz and sapphire substrates and characterized by x-ray diffraction (XRD), high-resolution scanning electron microscopy, optical spectroscopy, conductivity mapping, Hall effect measurements and positron annihilation spectroscopy. XRD showed that the as-grown films are of single-phase ZnO wurtzite structure and do not contain any secondary or impurity phases. The type of substrate was found to affect the orientation and degree of crystallinity of the films but had no effect on the defect structure or the transport properties of the films. High conductivity of 10-3 Ω cm, electron mobility of 20 cm2/Vs and carrier density of 1020 cm-3 were measured in most films. Thermal treatments in various atmospheres induced a large effect on the thickness, structure and electrical properties of the films. Annealing in a Zn and nitrogen environment at 400°C for 1 h led to a 16% increase in the thickness of the film; this indicates that Zn extracts oxygen atoms from the matrix and forms new layers of ZnO. On the other hand, annealing in a hydrogen atmosphere led to the emergence of an Al2O3 peak in the XRD pattern, which implies that hydrogen and Al atoms compete to occupy Zn sites in the ZnO lattice. Only ambient air annealing had an effect on film defect density and electrical properties, generating reductions in conductivity and electron mobility. Depth-resolved measurements of positron annihilation spectroscopy revealed short positron diffusion lengths and high concentrations of defects in all as-grown films. However, these defects did not diminish the electrical conductivity in the films.

Fingerprint-Based Structure Retrieval Using Electron Density

PubMed Central

Yin, Shuangye; Dokholyan, Nikolay V.

2010-01-01

We present a computational approach that can quickly search a large protein structural database to identify structures that fit a given electron density, such as determined by cryo-electron microscopy. We use geometric invariants (fingerprints) constructed using 3D Zernike moments to describe the electron density, and reduce the problem of fitting of the structure to the electron density to simple fingerprint comparison. Using this approach, we are able to screen the entire Protein Data Bank and identify structures that fit two experimental electron densities determined by cryo-electron microscopy. PMID:21287628

Fingerprint-based structure retrieval using electron density.

PubMed

Yin, Shuangye; Dokholyan, Nikolay V

2011-03-01

We present a computational approach that can quickly search a large protein structural database to identify structures that fit a given electron density, such as determined by cryo-electron microscopy. We use geometric invariants (fingerprints) constructed using 3D Zernike moments to describe the electron density, and reduce the problem of fitting of the structure to the electron density to simple fingerprint comparison. Using this approach, we are able to screen the entire Protein Data Bank and identify structures that fit two experimental electron densities determined by cryo-electron microscopy. Copyright © 2010 Wiley-Liss, Inc.

Superior Electrical Conductivity in Hydrogenated Layered Ternary Chalcogenide Nanosheets for Flexible All-Solid-State Supercapacitors.

PubMed

Hu, Xin; Shao, Wei; Hang, Xudong; Zhang, Xiaodong; Zhu, Wenguang; Xie, Yi

2016-05-04

As the properties of ultrathin two-dimensional (2D) crystals are strongly related to their electronic structures, more and more attempts were carried out to tune their electronic structures to meet the high standards for the construction of next-generation smart electronics. Herein, for the first time, we show that the conductive nature of layered ternary chalcogenide with formula of Cu2 WS4 can be switched from semiconducting to metallic by hydrogen incorporation, accompanied by a high increase in electrical conductivity. In detail, the room-temperature electrical conductivity of hydrogenated-Cu2 WS4 nanosheet film was almost 10(10) times higher than that of pristine bulk sample with a value of about 2.9×10(4)  S m(-1) , which is among the best values for conductive 2D nanosheets. In addition, the metallicity in the hydrogenated-Cu2 WS4 is robust and can be retained under high-temperature treatment. The fabricated all-solid-state flexible supercapacitor based on the hydrogenated-Cu2 WS4 nanosheet film shows promising electrochemical performances with capacitance of 583.3 F cm(-3) at a current density of 0.31 A cm(-3) . This work not only offers a prototype material for the study of electronic structure regulation in 2D crystals, but also paves the way in searching for highly conductive electrodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A statistical study of the THEMIS satellite data for plasma sheet electrons carrying auroral upward field-aligned currents

NASA Astrophysics Data System (ADS)

Lee, S.; Shiokawa, K.; McFadden, J. P.

2010-12-01

The magnetospheric electron precipitation along the upward field-aligned currents without the potential difference causes diffuse aurora, and the magnetospheric electrons accelerated by a field-aligned potential difference cause the intense and bright type of aurora, namely discrete aurora. In this study, we are trying to find out when and where the aurora can be caused with or without electron acceleration. We statistically investigate electron density, temperature, thermal current, and conductivity in the plasma sheet using the data from the electrostatic analyzer (ESA) onboard the THEMIS-D satellite launched in 2007. According to Knight (Planet. Space Sci., 1973) and Lyons (JGR, 1980), the thermal current, jth(∝ nT^(1/2) where n is electron density and T is electron temperature in the plasma sheet), represents the upper limit to field aligned current that can be carried by magnetospheric electrons without field-aligned potential difference. The conductivity, K(∝ nT^(-1/2)), represents the efficiency of the upward field-aligned current (j) that the field-aligned potential difference (V) can produce (j=KV). Therefore, estimating jth and K in the plasma sheet is important in understanding the ability of plasma sheet electrons to carry the field-aligned current which is driven by various magnetospheric processes such as flow shear and azimuthal pressure gradient. Similar study was done by Shiokawa et al. (2000) based on the auroral electron data obtained by the DMSP satellites above the auroral oval and the AMPTE/IRM satellite in the near Earth plasma sheet at 10-18 Re on February-June 1985 and March-June 1986 during the solar minimum. The purpose of our study is to examine auroral electrons with pitch angle information inside 12 Re where Shiokawa et al. (2000) did not investigate well. For preliminary result, we found that in the dawn side inner magnetosphere (source of the region 2 current), electrons can make sufficient thermal current without field-aligned potential difference, particularly during active time (AE > 100 nT). On the other hand, in the dusk side outer magnetosphere (source of the region 1), electron density and temperature are small, thus the thermal current is much smaller than the typical auroral current suggested by Iijima and Potemra (JGR, 1976). From this result, we suppose that electron acceleration is necessary on the dusk side region 1 upward field-aligned current. Our preliminary result, however, does not consider contamination of the radiation belt particles into the ESA data that is apparent inside 9 Re. In the presentation, we show the results with removal of the radiation belt particle contamination.

Structural and electronic properties of the alkali metal incommensurate phases

NASA Astrophysics Data System (ADS)

Woolman, Gavin; Naden Robinson, Victor; Marqués, Miriam; Loa, Ingo; Ackland, Graeme J.; Hermann, Andreas

2018-05-01

Under pressure, the alkali elements sodium, potassium, and rubidium adopt nonperiodic structures based on two incommensurate interpenetrating lattices. While all elements form the same "host" lattice, their "guest" lattices are all distinct. The physical mechanism that stabilizes these phases is not known, and detailed calculations are challenging due to the incommensurability of the lattices. Using a series of commensurate approximant structures, we tackle this issue using density functional theory calculations. In Na and K, the calculations prove accurate enough to reproduce not only the stability of the host-guest phases, but also the complicated pressure dependence of the host-guest ratio and the two guest-lattice transitions. We find Rb-IV to be metastable at all pressures, and suggest it is a high-temperature phase. The electronic structure of these materials is unique: they exhibit two distinct, coexisting types of electride behavior, with both fully localized pseudoanions and electrons localized in 1D wells in the host lattice, leading to low conductivity. While all phases feature pseudogaps in the electronic density of states, the perturbative free-electron picture applies to Na, but not to K and Rb, due to significant d -orbital population in the latter.

Free-energy analysis of the electron-density fluctuation in the quantum-mechanical/molecular-mechanical simulation combined with the theory of energy representation.

PubMed

Matubayasi, Nobuyuki; Takahashi, Hideaki

2012-01-28

The relationship is investigated for QM/MM (quantum-mechanical/molecular-mechanical) systems between the fluctuations of the electronic state of the QM subsystem and of the solvation effect due to the QM-MM interaction. The free-energy change due to the electron-density fluctuation around its average is highlighted, and is evaluated through an approximate functional formulated in terms of distribution functions of the many-body coupling (pairwise non-additive) part of the QM-MM interaction energy. A set of QM/MM simulations are conducted in MM water solvent for QM water solute in ambient and supercritical conditions and for QM glycine solute in the neutral and zwitterionic forms. The variation of the electronic distortion energy of the QM solute in the course of QM/MM simulation is then shown to be compensated by the corresponding variation of the free energy of solvation. The solvation free energy conditioned by the electronic distortion energy is further analyzed with its components. It is found that the many-body contribution is essentially equal between the free energy and the average sum of solute-solvent interaction energy. © 2012 American Institute of Physics

Stabilization of electron-scale turbulence by electron density gradient in national spherical torus experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruiz Ruiz, J.; White, A. E.; Ren, Y.

2015-12-15

Theory and experiments have shown that electron temperature gradient (ETG) turbulence on the electron gyro-scale, k{sub ⊥}ρ{sub e} ≲ 1, can be responsible for anomalous electron thermal transport in NSTX. Electron scale (high-k) turbulence is diagnosed in NSTX with a high-k microwave scattering system [D. R. Smith et al., Rev. Sci. Instrum. 79, 123501 (2008)]. Here we report on stabilization effects of the electron density gradient on electron-scale density fluctuations in a set of neutral beam injection heated H-mode plasmas. We found that the absence of high-k density fluctuations from measurements is correlated with large equilibrium density gradient, which ismore » shown to be consistent with linear stabilization of ETG modes due to the density gradient using the analytical ETG linear threshold in F. Jenko et al. [Phys. Plasmas 8, 4096 (2001)] and linear gyrokinetic simulations with GS2 [M. Kotschenreuther et al., Comput. Phys. Commun. 88, 128 (1995)]. We also found that the observed power of electron-scale turbulence (when it exists) is anti-correlated with the equilibrium density gradient, suggesting density gradient as a nonlinear stabilizing mechanism. Higher density gradients give rise to lower values of the plasma frame frequency, calculated based on the Doppler shift of the measured density fluctuations. Linear gyrokinetic simulations show that higher values of the electron density gradient reduce the value of the real frequency, in agreement with experimental observation. Nonlinear electron-scale gyrokinetic simulations show that high electron density gradient reduces electron heat flux and stiffness, and increases the ETG nonlinear threshold, consistent with experimental observations.« less

Injection of a coaxial-gun-produced magnetized plasma into a background helicon plasma

NASA Astrophysics Data System (ADS)

Zhang, Yue; Lynn, Alan; Gilmore, Mark; Hsu, Scott

2014-10-01

A compact coaxial plasma gun is employed for experimental investigation of plasma bubble relaxation into a lower density background plasma. Experiments are being conducted in the linear device HelCat at UNM. The gun is powered by a 120-uF ignitron-switched capacitor bank, which is operated in a range of 5 to 10 kV and 100 kA. Multiple diagnostics are employed to investigate the plasma relaxation process. Magnetized argon plasma bubbles with velocities 1.2Cs, densities 1020 m-3 and electron temperature 13eV have been achieved. The background helicon plasma has density 1013 m-3, magnetic field from 200 to 500 Gauss and electron temperature 1eV. Several distinct operational regimes with qualitatively different dynamics are identified by fast CCD camera images. Additionally a B-dot probe array has been employed to measure the spatial toroidal and poloidal magnetic flux evolution to identify plasma bubble configurations. Experimental data and analysis will be presented.

Polyaniline modified graphene and carbon nanotube composite electrode for asymmetric supercapacitors of high energy density

NASA Astrophysics Data System (ADS)

Cheng, Qian; Tang, Jie; Shinya, Norio; Qin, Lu-Chang

2013-11-01

Graphene and single-walled carbon nanotube (CNT) composites are explored as the electrodes for supercapacitors by coating polyaniline (PANI) nano-cones onto the graphene/CNT composite to obtain graphene/CNT-PANI composite electrode. The graphene/CNT-PANI electrode is assembled with a graphene/CNT electrode into an asymmetric pseudocapacitor and a highest energy density of 188 Wh kg-1 and maximum power density of 200 kW kg-1 are achieved. The structure and morphology of the graphene/CNT composite and the PANI nano-cone coatings are characterized by both scanning electron microscopy and transmission electron microscopy. The excellent performance of the assembled supercapacitors is also discussed and it is attributed to (i) effective utilization of the large surface area of the three-dimensional network structure of graphene-based composite, (ii) the presence of CNT in the composite preventing graphene from re-stacking, and (ii) uniform and vertically aligned PANI coating on graphene offering increased electrical conductivity.

Advanced Power Electronics Components

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2004-01-01

This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhuoyu; Yuan, Hongtao; Xie, Yanwu

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. Furthermore, in order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. By utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO 3/SrTiO 3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson–Schrödinger sub-bandmore » model. In particular, the large nonlinear dielectric response of SrTiO 3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. This study provides a broad framework for understanding various reported phenomena at the LaAlO 3/SrTiO 3 interface.« less

The size-quantized oscillations of the optical-phonon-limited electron mobility in AlN/GaN/AlN nanoscale heterostructures

NASA Astrophysics Data System (ADS)

Pokatilov, E. P.; Nika, D. L.; Askerov, A. S.; Zincenco, N. D.; Balandin, A. A.

2007-12-01

nanometer scale thickness by taking into account multiple quantized electron subbands and the confined optical phonon dispersion. It was shown that the inter-subband electronic transitions play an important role in limiting the electron mobility in the heterostructures when the energy separation between one of the size-quantized excited electron subbands and the Fermi energy becomes comparable to the optical phonon energy. The latter leads to the oscillatory dependence of the electron mobility on the thickness of the heterostructure conduction channel layer. This effect is observable at room temperature and over a wide range of the carrier densities. The developed formalism and calculation procedure are readily applicable to other material systems. The described effect can be used for fine-tuning the confined electron and phonon states in the nanoscale heterostructures in order to achieve performance enhancement of the nanoscale electronic and optoelectronic devices.

Theoretical and computational studies of the sheath of a planar wall

NASA Astrophysics Data System (ADS)

Giraudo, Martina; Camporeale, Enrico; Delzanno, Gian Luca; Lapenta, Giovanni

2012-03-01

We present an investigation of the stability and nonlinear evolution of the sheath of a planar wall. We focus on the electrostatic limit. The stability analysis is conducted with a fluid model where continuity and momentum equations for the electrons and ions are coupled through Poisson's equation. The effect of electron emission from the wall is studied parametrically. Our results show that a sheath instability associated with the emitted electrons can exist. Following Ref. [1], it is interpreted as a Rayleigh-Taylor instability driven by the favorable combination of the sheath electron density gradient and electric field. Fully kinetic Particle-In-Cell (PIC) simulations will also be presented to investigate whether this instability indeed exists and to study the nonlinear effect of electron emission on the sheath profiles. The simulations will be conducted with CPIC, a new electrostatic PIC code that couples the standard PIC algorithm with strategies for generation and adaptation of the computational grid. [4pt] [1] G.L. Delzanno, ``A paradigm for the stability of the plasma sheath against fluid perturbations,'' Phys. Plasmas 18, 103508 (2011).

Ab-initio modeling of electromechanical coupling at Si surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoppe, Sandra; Müller, Stefan, E-mail: stefan.mueller@tuhh.de; Michl, Anja

The electromechanical coupling at the silicon (100) and (111) surfaces was studied via density functional theory by calculating the response of the ionization potential and the electron affinity to different types of strain. We find a branched strain response of those two quantities with different coupling coefficients for negative and positive strain values. This can be attributed to the reduced crystal symmetry due to anisotropic strain, which partially lifts the degeneracy of the valence and conduction bands. Only the Si(111) electron affinity exhibits a monotonously linear strain response, as the conduction band valleys remain degenerate under strain. The strain responsemore » of the surface dipole is linear and seems to be dominated by volume changes. Our results may help to understand the mechanisms behind electromechanical coupling at an atomic level in greater detail and for different electronic and atomic structures.« less

Polymer-metal hybrid transparent electrodes for flexible electronics

NASA Astrophysics Data System (ADS)

Kang, Hongkyu; Jung, Suhyun; Jeong, Soyeong; Kim, Geunjin; Lee, Kwanghee

2015-03-01

Despite nearly two decades of research, the absence of ideal flexible and transparent electrodes has been the largest obstacle in realizing flexible and printable electronics for future technologies. Here we report the fabrication of ‘polymer-metal hybrid electrodes’ with high-performance properties, including a bending radius <1 mm, a visible-range transmittance>95% and a sheet resistance <10 Ω sq-1. These features arise from a surface modification of the plastic substrates using an amine-containing nonconjugated polyelectrolyte, which provides ideal metal-nucleation sites with a surface-density on the atomic scale, in combination with the successive deposition of a facile anti-reflective coating using a conducting polymer. The hybrid electrodes are fully functional as universal electrodes for high-end flexible electronic applications, such as polymer solar cells that exhibit a high power conversion efficiency of 10% and polymer light-emitting diodes that can outperform those based on transparent conducting oxides.