Investigation of linearity of the ITER outer vessel steady-state magnetic field sensors at high temperature

NASA Astrophysics Data System (ADS)

Entler, S.; Duran, I.; Kocan, M.; Vayakis, G.

2017-07-01

Three vacuum vessel sectors in ITER will be instrumented by the outer vessel steady-state magnetic field sensors. Each sensor unit features a pair of metallic Hall sensors with a sensing layer made of bismuth to measure tangential and normal components of the local magnetic field. The influence of temperature and magnetic field on the Hall coefficient was tested for the temperature range from 25 to 250 oC and the magnetic field range from 0 to 0.5 T. A fit of the Hall coefficient normalized temperature function independent of magnetic field was found, and a model of the Hall coefficient functional dependence at a wide range of temperature and magnetic field was built with the purpose to simplify the calibration procedure.

Transport and NMR characteristics of the skutterudite-related compound Ca3Rh4Sn13

NASA Astrophysics Data System (ADS)

Tseng, C. W.; Kuo, C. N.; Li, B. S.; Wang, L. M.; Gippius, A. A.; Kuo, Y. K.; Lue, C. S.

2018-02-01

We report the electronic properties of the Yb3Rh4Sn13-type single crystalline Ca3Rh4Sn13 by means of the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity, as well as 119Sn nuclear magnetic resonance (NMR) measurements. The negative sign of the Hall coefficient and Seebeck coefficient at low temperatures suggests that the n-type carriers dominate the electrical transport in Ca3Rh4Sn13, in contrast to the observations in Sr3Rh4Sn13 which has a p-type conduction. Such a finding indicates a significant difference in the electronic features between these two stannides. Furthermore, we analyzed the temperature-dependent 119Sn NMR spin-lattice relaxation rate for Ca3Rh4Sn13, (Sr0.7Ca0.3)3Rh4Sn13, and Sr3Rh4Sn13 to examine the change of the electronic Fermi-level density of states (DOS) in (Sr1-xCax)3Rh4Sn13. It indicates that the Sn 5s partial Fermi-level DOS enhances with increasing the Ca content, being consistent with the trend of the superconducting temperature. Since the total Fermi-level DOS usually obeys the same trend of the partial Fermi-level DOS, the NMR analysis provides microscopic evidence for the correlation between the electronic DOS and superconductivity of the (Sr1-xCax)3Rh4Sn13 system.

Investigation of Luminescent Diode Arrays for Photochromic Film Recording

DTIC Science & Technology

1969-06-30

usually measured by Hall effect and rev.istivity measurements using the Van der Pauw technique.) Ami an example, if GP is Initially 3 x i10 P type and...contacta and eettin% the specimen in a known magnetic field. The Van der Pauw technique Is used to meaeure the HAll coefficient. From the Hall coefficient...iraenuitive within 30 minutes after activation. Un~ der ultr’aviolet exposure, dark red ’Iuoro-cence occurs. When the activation properties of the film are

Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

NASA Astrophysics Data System (ADS)

Ganguly, Shreyashi; Zhou, Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

2011-12-01

Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2- xSb xTe 3) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2- xSb xTe 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties.

Study on the Lattice Dynamics of the Argyrodite Ag8GeTe6

NASA Astrophysics Data System (ADS)

Hitchcock, Dale; Thompson, Emily; He, Jian; Bredesen, Isaac; Keppends, Veelre; Mandrus, David

2014-03-01

Ag8GeTe6 was initially studied as a super ionic-electronic mixed conductor in the 1970s, and more recently has attracted new interest for its thermoelectric performance. A key to the desirable thermoelectric performance of Ag8GeTe6 is its exceptionally low lattice thermal conductivity (~ 0.25W/m*K at 300K), which is intimately related to its structure, consecutive structural instabilities, and unusual lattice dynamics (e.g., anharmonicity). In this work, we have studied Ag8GeTe6 by means of thermal conductivity, electrical conductivity, Seebeck coefficient, Hall coefficient, magnetic susceptibility, resonant ultrasound spectroscopy (RUS), photoacoustic spectroscopy, and synchrotron x-ray diffraction at low temperatures in order to further understand the coexistence of mixed conduction and high thermoelectric performance at elevated temperatures. This work is supported by NSF DMR 1307740.

Hall-plot of the phase diagram for Ba(Fe1-xCox)2As2

NASA Astrophysics Data System (ADS)

Iida, Kazumasa; Grinenko, Vadim; Kurth, Fritz; Ichinose, Ataru; Tsukada, Ichiro; Ahrens, Eike; Pukenas, Aurimas; Chekhonin, Paul; Skrotzki, Werner; Teresiak, Angelika; Hühne, Ruben; Aswartham, Saicharan; Wurmehl, Sabine; Mönch, Ingolf; Erbe, Manuela; Hänisch, Jens; Holzapfel, Bernhard; Drechsler, Stefan-Ludwig; Efremov, Dmitri V.

2016-06-01

The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by , where e is the charge of the carrier, and n is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe1-xCox)2As2 with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe2As2 system.

Thermal and electrical transport in metals and superconductors across antiferromagnetic and topological quantum transitions

NASA Astrophysics Data System (ADS)

Chatterjee, Shubhayu; Sachdev, Subir; Eberlein, Andreas

2017-08-01

We study thermal and electrical transport in metals and superconductors near a quantum phase transition where antiferromagnetic order disappears. The same theory can also be applied to quantum phase transitions involving the loss of certain classes of intrinsic topological order. For a clean superconductor, we recover and extend well-known universal results. The heat conductivity for commensurate and incommensurate antiferromagnetism coexisting with superconductivity shows a markedly different doping dependence near the quantum critical point, thus allowing us to distinguish between these states. In the dirty limit, the results for the conductivities are qualitatively similar for the metal and the superconductor. In this regime, the geometric properties of the Fermi surface allow for a very good phenomenological understanding of the numerical results on the conductivities. In the simplest model, we find that the conductivities do not track the doping evolution of the Hall coefficient, in contrast to recent experimental findings. We propose a doping dependent scattering rate, possibly due to quenched short-range charge fluctuations below optimal doping, to consistently describe both the Hall data and the longitudinal conductivities.

A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

DOE PAGES

Chi, Hang; Tan, Gangjian; Kanatzidis, Mercouri G.; ...

2016-05-02

In this study, SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ~4 μ B (Bohr magneton) of magnetic moment to Sn 1–xMn xTe. The Curie temperatureTC reaches ~14K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient R H andmore » a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivityκ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.« less

Thermoelectric Properties of Lanthanum Sulfide

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, R.; Parker, J. B.; Zoltan, A.; Zoltan, L. D.; Danielson, L.; Raag, V.

1987-01-01

Report describes measurement of Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect in gamma-phase lanthanum sulfide with composition of La3-x S4. Results of study, part of search for high-temperature thermoelectric energy-conversion materials, indicate this sulfide behaves like extrinsic semiconductor over temperature range of 300 to 1,400 K, with degenerate carrier concentration controlled by stoichiometric ratio of La to S.

Linear response and Berry curvature in two-dimensional topological phases

NASA Astrophysics Data System (ADS)

Bradlyn, Barry J.

In this thesis we examine the viscous and thermal transport properties of chiral topological phases, and their relationship to topological invariants. We start by developing a Kubo formalism for calculating the frequency dependent viscosity tensor of a general quantum system, both with and without a uniform external magnetic field. The importance of contact terms is emphasized. We apply this formalism to the study of integer and fractional quantum Hall states, as well as p + ip paired superfluids, and verify the relationship between the Hall viscosity and the mean orbital spin density. We also elucidate the connection between our Kubo formulas and prior adiabatic transport calculations of the Hall viscosity. Additionally, we derive a general relationship between the frequency dependent viscosity and conductivity tensors for Galilean-invariant systems. We comment on the implications of this relationship towards the measurement of Hall viscosity in solid-state systems. To address the question of thermal transport, we first review the standard Kubo formalism of Luttinger for computing thermoelectric coefficients. We apply this to the specific case of non-interacting electrons in the integer quantum Hall regime, paying careful attention to the roles of bulk and edge effects. In order to generalize our discussion to interacting systems, we construct a low-energy effective action for a two-dimensional non-relativistic topological phase of matter in a continuum, which completely describes all of its bulk thermoelectric and visco-elastic properties in the limit of low frequencies, long distances, and zero temperature, without assuming either Lorentz or Galilean invariance, by coupling the microscopic degrees of freedom to the background spacetime geometry. We derive the most general form of a local bulk induced action to first order in derivatives of the background fields, from which thermodynamic and transport properties can be obtained. We show that the gapped bulk cannot contribute to low-temperature thermoelectric transport other than the ordinary Hall conductivity; the other thermoelectric effects (if they occur) are thus purely edge effects. The stress response to time-dependent strains is given by the Hall viscosity, which is robust against perturbations and related to the spin current. Finally, we address the issue of calculating the topological central charge from bulk wavefunctions for a topological phase. Using the form of the topological terms in the induced action, we show that we can calculate the various coefficients of these terms as Berry curvatures associated to certain metric and electromagnetic vector potential perturbations. We carry out this computation explicitly for quantum Hall trial wavefunctions that can be represented as conformal blocks in a chiral conformal field theory (CFT). These calculations make use of the gauge and gravitational anomalies in the underlying chiral CFT.

Hall effect in Ce/sub 1-x/Y/sub x/Pd/sub 3/ mixed-valence alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fert, A.; Pureur, P.; Hamzic, A.

Mixed-valence and Kondo lattice systems exhibit large anomalous Hall coefficients with a striking change of sign at low temperature in several systems (CePd/sub 3/, CeCu/sub 6/,..., etc.). We have studied the Hall effect of Ce/sub 1-x/Y/sub x/Pd/sub 3/, in which the substitution of small amounts of Y for Ce prevents the development of coherence at low temperature. We find that the Hall coefficient does not change its sign at low temperature and can be well understood in the one-impurity model of Ramakrishnan, Coleman, and Anderson. We infer that the change of sign observed in CePd/sub 3/ is an effect ofmore » coherence.« less

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

NASA Astrophysics Data System (ADS)

Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

2015-07-01

This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10-15 cm2 s-1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

Enhanced thermoelectric response in the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Roura-Bas, Pablo; Arrachea, Liliana; Fradkin, Eduardo

2018-02-01

We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors ν =1 /m within Laughlin series. We calculate the figure of merit Z T for the maximum efficiency at a fixed temperature difference. We find a significant enhancement of this quantity in the fractional filling in relation to the integer-filling case, which is a direct consequence of the fractionalization of the electron in the fractional quantum Hall state. We present simple theoretical expressions for the Onsager coefficients at low temperatures, which explicitly show that Z T and the Seebeck coefficient increase with m .

A one-dimensional with three-dimensional velocity space hybrid-PIC model of the discharge plasma in a Hall thruster

NASA Astrophysics Data System (ADS)

Shashkov, Andrey; Lovtsov, Alexander; Tomilin, Dmitry

2017-04-01

According to present knowledge, countless numerical simulations of the discharge plasma in Hall thrusters were conducted. However, on the one hand, adequate two-dimensional (2D) models require a lot of time to carry out numerical research of the breathing mode oscillations or the discharge structure. On the other hand, existing one-dimensional (1D) models are usually too simplistic and do not take into consideration such important phenomena as neutral-wall collisions, magnetic field induced by Hall current and double, secondary, and stepwise ionizations together. In this paper a one-dimensional with three-dimensional velocity space (1D3V) hybrid-PIC model is presented. The model is able to incorporate all the phenomena mentioned above. A new method of neutral-wall collisions simulation in described space was developed and validated. Simulation results obtained for KM-88 and KM-60 thrusters are in a good agreement with experimental data. The Bohm collision coefficient was the same for both thrusters. Neutral-wall collisions, doubly charged ions, and induced magnetic field were proved to stabilize the breathing mode oscillations in a Hall thruster under some circumstances.

Electric transport coefficients in highly epitaxial LaBaCo{sub 2}O{sub 5 + δ} films with “p-to-n” transition induced by oxygen deficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaibo, J.; Zhang, Q. Y., E-mail: qyzhang@dlut.edu.cn; Hu, H. C.

2016-08-14

Electric transport coefficients such as carrier type, density, and mobility are the important physical parameters in designing functional devices. In this work, we report the study on the electric transport coefficients of the highly epitaxial LaBaCo{sub 2}O{sub 5 + δ} (LBCO) films, which were discussed as a function of electric conductivity for the first time and compared with the results calculated by the theory for mixed conduction. The mobility in the LBCO films was determined to be ∼0.85 and ∼40 cm{sup 2}/V s for holes and electrons, respectively, and the density of p-type carriers strongly depends on the oxygen deficiency. Solid evidence ismore » presented to demonstrate that the oxygen deficiency cannot make LBCO materials changed from p- to n-type. The n-type conduction observed in experiment is a counterfeit phenomenon caused by the deficiency in Hall measurement, rather than a realistic transition induced by oxygen deficiency. In addition, the temperature-dependent conductivity was discussed using the differential coefficients, which might be useful in the study of the samples with magnetic transition.« less

Ionospheric absorption, typical ionization, conductivity, and possible synoptic heating parameters in the upper atmosphere

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walker, J.K.; Bhatnagar, V.P.

1989-04-01

Relations for the average energetic particle heating and the typical Hall and Pedersen conductances, as functions of the ground-based Hf radio absorption, are determined. Collis and coworkers used the geosynchronous GEOS 2 particle data to relate or ''calibrate'' the auroral absorption on the same magnetic field lines with five levels of D region ionization. These ionospheric models are related to a Chapman layer that extends these models into the E region. The average energetic particle heating is calculated for each of these models using recent expressions for the effective recombination coefficient. The corresponding height-integrated heating rates are determined and relatedmore » to the absorption with a quadratic expression. The average Hall and Pedersen conductivities are calculated for each of the nominal absorption ionospheric models. The corresponding height-integrated conductances for nighttime conditions are determined and related to the absorption. Expressions for these conductances during disturbed sunlit conditions are also determined. These relations can be used in conjunction with simultaneous ground-based riometric and magnetic observations to determines the average Hall and Pedersen currents and the Joule heating. The typical daily rate of temperature increase in the mesosphere for storm conditions is several 10 K for both the energetic particle and the Joule heating. The increasing importance of these parameters of the upper and middle atmospheres is discussed. It is proposed that northern hemisphere ionospheric, current, and heating synoptic models and parameters be investigated for use on a regular basis. copyright American Geophysical Union 1989« less

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

NASA Astrophysics Data System (ADS)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

Annealing of Heavily Boron-Doped Silicon: Effect on Electrical and Thermoelectric Properties.

PubMed

Zulian, Laura; Segrado, Francesco; Narducci, Dario

2017-03-01

In previous studies it was shown that heavily boron-doped nanocrystalline silicon submitted to thermal treatments at temperatures ≥800 °C is characterized by an anomalously high thermoelectric power factor. Its enhanced performances were ascribed to the formation of SiBx precipitates at grain boundary, leading to the formation of potential barriers that filter out low-energy carriers, then causing a simultaneous enhancement of the Seebeck coefficient and of the electrical conductivity. To further investigate the effect of thermal treatment on boron-doped nanocrystalline silicon, samples were submitted to a host of annealing processes or of sequences of them at temperatures between 900 and 1000 °C and for various amounts of time. Electrical conductivity and Hall effect measurements were carried out after each thermal treatment over the temperature range 20–300 K. They provided evidence of the formation of an impurity band, and of hopping conduction at very low temperatures. Hall resistivity data versus temperature provided therefore important insights in the electronic structure of the system, which will enable a more complete understanding of the factors ruling energy filtering in this class of materials.

Effective anomalous Hall coefficient in an ultrathin Co layer sandwiched by Pt layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Peng; Wu, Di; Jiang, Zhengsheng

2014-02-14

Anomalous Hall effect in Co/Pt multilayer is important to study the effect of interface with strong spin-orbit coupling. However, the shunting effect of the layers in such system and the circuit in the plane perpendicular to the injected current were overlooked in most works and thus, anomalous Hall coefficient in Co/Pt multilayer has not been determined accurately. Considering the shunting effect and the equivalent circuit, we show that the effective anomalous Hall coefficient of a 0.5 nm thick Co layer sandwiched by Pt layers R{sub S} is 0.29 ± 0.01 μΩ cm/T at the zero temperature limit and increases to about 0.73 μΩ cm/T at the temperaturemore » of 300 K. R{sub S} is one order larger than that in bulk Co film, indicating the large contribution of the Co/Pt interface. R{sub S} increases with the resistivity of Co as well as a resistivity independent contribution of −0.23 ± 0.01 μΩ cm/T. The equivalent anomalous Hall current in the Co layer has a maximum of 1.1% of the injected transverse current in the Co layer around the temperature of 80 K.« less

Ultrafast lithium diffusion in bilayer graphene

NASA Astrophysics Data System (ADS)

Kühne, Matthias; Paolucci, Federico; Popovic, Jelena; Ostrovsky, Pavel M.; Maier, Joachim; Smet, Jurgen H.

2017-09-01

Solids that simultaneously conduct electrons and ions are key elements for the mass transfer and storage required in battery electrodes. Single-phase materials with a high electronic and high ionic conductivity at room temperature are hard to come by, and therefore multiphase systems with separate ion and electron channels have been put forward instead. Here we report on bilayer graphene as a single-phase mixed conductor that demonstrates Li diffusion faster than in graphite and even surpassing the diffusion of sodium chloride in liquid water. To measure Li diffusion, we have developed an on-chip electrochemical cell architecture in which the redox reaction that forces Li intercalation is localized only at a protrusion of the device so that the graphene bilayer remains unperturbed from the electrolyte during operation. We performed time-dependent Hall measurements across spatially displaced Hall probes to monitor the in-plane Li diffusion kinetics within the graphene bilayer and measured a diffusion coefficient as high as 7 × 10-5 cm2 s-1.

The Hall Effect in Hydrided Rare Earth Films

NASA Astrophysics Data System (ADS)

Koon, D. W.; Azofeifa, D. E.; Clark, N.

We describe two new techniques for measuring the Hall effect in capped rare earth films during hydriding. In one, we simultaneously measure resistivity and the Hall coefficient for a rare earth film covered with four different thicknesses of Pd, recovering the charge transport quantities for both materials. In the second technique, we replace Pd with Mn as the covering layer. We will present results from both techniques.

Magnetization and Hall effect under high pressure in NaV 6O 11

NASA Astrophysics Data System (ADS)

Naka, T.; Matsumoto, T.; Kanke, Y.; Murata, K.

1995-02-01

We have investigated the pressure dependences of magnetization and the Hall coefficient in the ferromagnetic vanadium oxide NaV 6O 11 up to 1.2 GPa. Structural transitions (hexagonal-hexagonal-orthorhombic) occur at TH = 245 K and TL = 35 K at ambient pressure. Meanwhile, the susceptibility obeys the Curie-Weiss law X = C/( T - θ) with antiferromagnetic correlation of θ < 0 at T > TH, with ferromagnetic correlation of θ < 0 at T < TH. The spontaneous magnetization appears below Tc = 64.2 K. With increasing pressure, Tc and magnetization M( T < Tc) decrease, while TH increases. The sign of the Hall coefficient changes continuously (negative-positive-negative) at around T ≈ 170 K and 75 K.

Electromagnetic waves in a model with Chern-Simons potential.

PubMed

Pis'mak, D Yu; Pis'mak, Yu M; Wegner, F J

2015-07-01

We investigated the appearance of Chern-Simons terms in electrodynamics at the surface or interface of materials. The requirement of locality, gauge invariance, and renormalizability in this model is imposed. Scattering and reflection of electromagnetic waves in three different homogeneous layers of media is determined. Snell's law is preserved. However, the transmission and reflection coefficient depend on the strength of the Chern-Simons interaction (connected with Hall conductance), and parallel and perpendicular components are mixed.

Universal DC Hall conductivity of Jain's state ν = N/2N +/- 1

NASA Astrophysics Data System (ADS)

Nguyen, Dung; Son, Dam

We present the Fermi-liquid theory of the fractional quantum Hall effect to describe Jain's states with filling fraction ν =N/2 N +/- 1 , that are near half filling. We derive the DC Hall conductivity σH (t) in closed form within the validity of our model. The results show that, without long range interaction, DC Hall conductivity has the universal form which doesn't depend on the detail of short range Landau's parameters Fn. When long range interaction is included, DC Hall conductivity depends on both long range interaction and Landau's parameters. We also analyze the relation between DC Hall conductivity and static structure factor. This work was supported by the Chicago MRSEC, which is funded by NSF through Grant DMR-1420709.

Interplay between snake and quantum edge states in a graphene Hall bar with a pn-junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milovanović, S. P., E-mail: slavisa.milovanovic@uantwerpen.be; Peeters, F. M., E-mail: francois.peeters@uantwerpen.be; Ramezani Masir, M., E-mail: mrmphys@gmail.com

2014-09-22

The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied, we predict oscillations in the Hall and the bend resistance as function of the magnetic field, which are a consequence of quantum interference between the occupied snake states.

Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

NASA Astrophysics Data System (ADS)

Yan, J.; Luo, X.; Chen, F. C.; Pei, Q. L.; Lin, G. T.; Han, Y. Y.; Hu, L.; Tong, P.; Song, W. H.; Zhu, X. B.; Sun, Y. P.

2017-07-01

Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity ρxx and Hall resistivity ρxy), and thermal transport properties [including heat capacity Cp(T) and thermoelectric power S(T)] have been measured. There are some interesting phenomena: (i) Cr0.68Se presents a non-collinear antiferromagnetic (AFM) semiconducting behavior at the Néel temperature of TN = 42 K and with the activated energy of Eg = 3.9 meV; (ii) it exhibits the anomalous Hall effect (AHE) below TN and large negative magnetoresistance about 83.7% (2 K, 8.5 T). The AHE coefficient RS is 0.385 cm-3/C at T = 2 K, and the AHE conductivity σH is about 1 Ω-1 cm-1 at T = 40 K; (iii) the scaling behavior between the anomalous Hall resistivity ρxy A and the longitudinal resistivity ρxx is linear, and further analysis implies that the origin of the AHE in Cr0.68Se is dominated by the skew-scattering mechanism. Our results may be helpful for exploring the potential application of these kinds of 2D AFM semiconductors.

Anomalous thermoelectric phenomena in lattice models of multi-Weyl semimetals

NASA Astrophysics Data System (ADS)

Gorbar, E. V.; Miransky, V. A.; Shovkovy, I. A.; Sukhachov, P. O.

2017-10-01

The thermoelectric transport coefficients are calculated in a generic lattice model of multi-Weyl semimetals with a broken time-reversal symmetry by using the Kubo's linear response theory. The contributions connected with the Berry curvature-induced electromagnetic orbital and heat magnetizations are systematically taken into account. It is shown that the thermoelectric transport is profoundly affected by the nontrivial topology of multi-Weyl semimetals. In particular, the calculation reveals a number of thermal coefficients of the topological origin which describe the anomalous Nernst and thermal Hall effects in the absence of background magnetic fields. Similarly to the anomalous Hall effect, all anomalous thermoelectric coefficients are proportional to the integer topological charge of the Weyl nodes. The dependence of the thermoelectric coefficients on the chemical potential and temperature is also studied.

Thermoelectric Properties of Cu-doped Bi2-xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

NASA Astrophysics Data System (ADS)

Jung, Woo-Jin; Kim, Il-Ho

2018-03-01

P-type Bi2-xSbxTe3:Cum (x = 1.5-1.7 and m = 0.002-0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

Thermoelectric transport in two-dimensional giant Rashba systems

NASA Astrophysics Data System (ADS)

Xiao, Cong; Li, Dingping; Ma, Zhongshui; Niu, Qian

Thermoelectric transport in strongly spin-orbit coupled two-dimensional Rashba systems is studied using the analytical solution of the linearized Boltzmann equation. To highlight the effects of inter-band scattering, we assume point-like potential impurities, and obtain the band-and energy-dependent transport relaxation times. Unconventional transport behaviors arise when the Fermi level lies near or below the band crossing point (BCP), such as the non-Drude electrical conducivity below the BCP, the failure of the standard Mott relation linking the Peltier coefficient to the electrical conductivity near the BCP, the enhancement of diffusion thermopower and figure of merit below the BCP, the zero-field Hall coefficient which is not inversely proportional to and not a monotonic function of the carrier density, the enhanced Nernst coefficient below the BCP, and the enhanced current-induced spin-polarization efficiency.

Ion beam irradiation effect on thermoelectric properties of Bi2Te3 and Sb2Te3 thin films

NASA Astrophysics Data System (ADS)

Fu, Gaosheng; Zuo, Lei; Lian, Jie; Wang, Yongqiang; Chen, Jie; Longtin, Jon; Xiao, Zhigang

2015-09-01

Thermoelectric energy harvesting is a very promising application in nuclear power plants for self-maintained wireless sensors. However, the effects of intensive radiation on the performance of thermoelectric materials under relevant reactor environments such as energetic neutrons are not fully understood. In this work, radiation effects of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric thin film samples prepared by E-beam evaporation are investigated using Ne2+ ion irradiations at different fluences of 5 × 1014, 1015, 5 × 1015 and 1016 ions/cm2 with the focus on the transport and structural properties. Electrical conductivities, Seebeck coefficients and power factors are characterized as ion fluence changes. X-ray diffraction (XRD) and transmission electron microscopy (TEM) of the samples are obtained to assess how phase and microstructure influence the transport properties. Carrier concentration and Hall mobility are obtained from Hall effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. Positive effects of ion irradiations from Ne2+ on thermoelectric material property are observed to increase the power factor to 208% for Bi2Te3 and 337% for Sb2Te3 materials between fluence of 1 and 5 × 1015 cm2, due to the increasing of the electrical conductivity as a result of ionization radiation-enhanced crystallinity. However, under a higher fluence, 5 × 1015 cm2 in this case, the power factor starts to decrease accordingly, limiting the enhancements of thermoelectric materials properties under intensive radiation environment.

Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

NASA Astrophysics Data System (ADS)

Nandi, D.; Sodemann, Inti; Shain, K.; Lee, G. H.; Huang, K.-F.; Chang, Cui-Zu; Ou, Yunbo; Lee, S. P.; Ward, J.; Moodera, J. S.; Kim, P.; Yacoby, A.

2018-02-01

We report magnetotransport measurements on magnetically doped (Bi,Sb ) 2Te3 films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.

External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)

NASA Astrophysics Data System (ADS)

Pradipto, Abdul-Muizz; Akiyama, Toru; Ito, Tomonori; Nakamura, Kohji

2018-01-01

The effects of applying external electric fields to the anomalous and spin Hall conductivities in Fe thin-film models with different layer thicknesses on MgO(001) are investigated by using first-principles calculations. We observe that, for the considered systems, the application of positive electric field associated with the accumulation of negative charges on the Fe side generally decreases (increases) the anomalous (spin) Hall conductivities. The mapping of the Hall conductivities within the two-dimensional Brillouin zone shows that the electric-field-induced modifications are related to the modification of the band structures of the atoms at the interface with the MgO substrate. In particular, the external electric field affects the Hall conductivities via the modifications of the dx z,dy z orbitals, in which the application of positive electric field pushes the minority-spin states of the dx z,dy z bands closer to the Fermi level. Better agreement with the anomalous Hall conductivity for bulk Fe and a more realistic scenario for the electric field modification of Hall conductivities are obtained by using the thicker layers of Fe on MgO (Fe3/MgO and Fe5/MgO).

Electrical transport and optical band gap of NiFe2Ox thin films

NASA Astrophysics Data System (ADS)

Bougiatioti, Panagiota; Manos, Orestis; Klewe, Christoph; Meier, Daniel; Teichert, Niclas; Schmalhorst, Jan-Michael; Kuschel, Timo; Reiss, Günter

2017-12-01

We fabricated NiFe2Ox thin films on MgAl2O4(001) by reactive dc magnetron co-sputtering varying the oxygen partial pressure. The fabrication of a material with a variable oxygen deficiency leads to controllable electrical and optical properties which are beneficial for the investigations of the transport phenomena and could, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity, we obtained the conduction mechanisms that govern the systems in the high and low temperature regimes. We further extracted low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. The Hall coefficient is negative and decreases with increasing conductivity as expected for n-type conduction, while the Hall- and the drift mobilities show a large difference. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energies, with lower band gap values in the less oxidized samples.

Effects of Ionospheric Hall Polarization on Magnetospheric Configurations and Dynamics in Global MHD Simulation

NASA Astrophysics Data System (ADS)

Nakamizo, A.; Yoshikawa, A.; Tanaka, T.

2017-12-01

We investigate how the M-I coupling and boundary conditions affects the results of global simulations of the magnetosphere. More specifically, we examine the effects of ionospheric Hall polarization on magnetospheric convection and dynamics by using an MHD code developed by Tanaka et al. [2010]. This study is motivated by the recently proposed idea that the ionospheric convection is modified by the ionospheric polarization [Yoshikawa et al., 2013]. We perform simulations for the following pairs of Hall conductance and IMF-By; Hall conductance set by αH = 2, 3.5, 5, and uniform distribution (1.0 [S] everywhere), where RH is the ratio of Hall to Pedersen conductance, and IMF-By of positive, negative, and zero. The results are summarized as follows. (a) Large-scale structure: In the cases of uniform Hall conductance, the magnetosphere is completely symmetric under the zero IMF-By. In the cases of non-uniform Hall conductance, the magnetosphere shows asymmetries globally even under the zero IMF-By. Asymmetries become severe for larger αH. The results indicate that ionospheric Hall polarization is one of the important factors to determine the global structure. (b) Formation of NENL: The location becomes closer to the earth and timing becomes earlier for larger RH. The difference is considered to be related to the combined effects of field lines twisting due to ionospheric Hall polarization and M-I energy/current closures. (c) Near-earth convection: In the cases of non-uniform Hall conductance, an inflection structure is formed around premidnight sector on equatorial plane inside 10 RE. Considering that the region 2 FAC is not sufficiently generated in MHD models, the structure corresponds to a convection reversal often shown in the RCM. Previous studies regard the structure as the Harang Reversal in the magnetosphere. In the cases of uniform Hall conductance, by contrast, such structure is not formed, indicating that the Harang Reversal may not be formed without the effect of ionospheric Hall polarization. The above initial research strongly suggests that the ionospheric Hall polarization plays a significant role in the M-I system.

Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1-xSnx)2Te3

NASA Astrophysics Data System (ADS)

Lin, Chan-Chieh; Shon, Won Hyuk; Rathnam, Lydia; Rhyee, Jong-Soo

2018-03-01

We investigated the thermoelectric properties of Sn-doped (Bi1-xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.

Use of XPS to clarify the Hall coefficient sign variation in thin niobium layers buried in silicon

NASA Astrophysics Data System (ADS)

Demchenko, Iraida N.; Lisowski, Wojciech; Syryanyy, Yevgen; Melikhov, Yevgen; Zaytseva, Iryna; Konstantynov, Pavlo; Chernyshova, Maryna; Cieplak, Marta Z.

2017-03-01

Si/Nb/Si trilayers formed with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were prepared by magnetron sputtering and studied using XPS depth-profile techniques in order to investigate the change of Hall coefficient sign with thickness. The analysis of high-resolution (HR) XPS spectra revealed that the thicker layer sample has sharp top interface and metallic phase of niobium, thus holes dominate the transport. In contrast, the analysis indicates that the thinner layer sample has a Nb-rich mixed alloy formation at the top interface. The authors suggest that the main effect leading to a change of sign of the Hall coefficient for the thinner layer sample (which is negative contrary to the positive sign for the thicker layer sample) may be related to strong boundary scattering enhanced by the presence of silicon ions in the layer close to the interface/s. The depth-profile reconstruction was performed by SESSA software tool confirming that it can be reliably used for quantitative analysis/interpretation of experimental XPS data.

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sengupta, Parijat; Bellotti, Enrico

2016-05-23

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; themore » spin Hall conductivity of WSe{sub 2} was found to be larger.« less

Strong Intrinsic Spin Hall Effect in the TaAs Family of Weyl Semimetals

NASA Astrophysics Data System (ADS)

Sun, Yan; Zhang, Yang; Felser, Claudia; Yan, Binghai

2016-09-01

Since their discovery, topological insulators are expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin-momentum locking. However, the bulk doping problem remains an obstacle that hinders such an application. In this work, we predict that a newly discovered family of topological materials, the Weyl semimetals, exhibits a large intrinsic spin Hall effect that can be utilized to generate and detect spin currents. Our ab initio calculations reveal a large spin Hall conductivity in the TaAs family of Weyl materials. Considering the low charge conductivity of semimetals, Weyl semimetals are believed to present a larger spin Hall angle (the ratio of the spin Hall conductivity over the charge conductivity) than that of conventional spin Hall systems such as the 4 d and 5 d transition metals. The spin Hall effect originates intrinsically from the bulk band structure of Weyl semimetals, which exhibit a large Berry curvature and spin-orbit coupling, so the bulk carrier problem in the topological insulators is naturally avoided. Our work not only paves the way for employing Weyl semimetals in spintronics, but also proposes a new guideline for searching for the spin Hall effect in various topological materials.

Thermoelectric properties of n-type polycrystalline BixSb2-xTe3 alloys

NASA Technical Reports Server (NTRS)

Snyder, J.; Gerovac, N.; Caillat, T.

2002-01-01

(BixSbl-x)2Te3(.5 = x = .7) polycrystalline samples were synthesized using a combination of melting and powder metallurgy techniques. The samples were hot pressed in graphite dies and cut perpendicular and parallel to the pressing direction. Samples were examined by microprobe analysis to determine their atomic composition. The thermoelectric properties were measured at room temperature in both directions. These properties include Seebeck coefficient, thermal conductivity, electrical resistivity, and Hall effect. The thermoelectric figure-of-merit, ZT, was calculated fiom these properties.

Magnetotransport properties of 8-Pmmn borophene: effects of Hall field and strain.

PubMed

Islam, S K Firoz

2018-07-11

The polymorph of 8-Pmmn borophene is an anisotropic Dirac material with tilted Dirac cones at two valleys. The tilting of the Dirac cones at two valleys are in opposite directions, which manifests itself via the valley dependent Landau levels in presence of an in-plane electric field (Hall field). The valley dependent Landau levels cause valley polarized magnetotransport properties in presence of the Hall field, which is in contrast to the monolayer graphene with isotropic non-tilted Dirac cones. The longitudinal conductivity and Hall conductivity are evaluated by using linear response theory in low temperature regime. An analytical approximate form of the longitudinal conductivity is also obtained. It is observed that the tilting of the Dirac cones amplifies the frequency of the longitudinal conductivity oscillation (Shubnikov-de Haas). On the other hand, the Hall conductivity exhibits graphene-like plateaus except the appearance of valley dependent steps which are purely attributed to the Hall field induced lifting of the valley degeneracy in the Landau levels. Finally we look into the different cases when the Hall field is applied to the strained borophene and find that valley dependency is fully dominated by strain rather than Hall field. Another noticeable point is that if the real magnetic field is replaced by the strain induced pseudo magnetic field then the electric field looses its ability to cause valley polarized transport.

Valley-chiral quantum Hall state in graphene superlattice structure

NASA Astrophysics Data System (ADS)

Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

2016-05-01

We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

NASA Technical Reports Server (NTRS)

Brucker, G. J.

1971-01-01

The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

Influence of point defects on the thermal conductivity in FeSi

NASA Astrophysics Data System (ADS)

Stern, Robin; Wang, Tao; Carrete, Jesús; Mingo, Natalio; Madsen, Georg K. H.

2018-05-01

The unique transport properties of B20 FeSi have been investigated for decades. The progress in theoretical calculations allows the explanation and prediction of more and more of such properties. In this paper we investigate the lattice thermal conductivity of FeSi. Calculation for pristine FeSi severely overestimates the lattice thermal conductivity compared to experiment. We point out that the defect concentration can be considerably larger than indicated by the Hall coefficient. The defect formation energies are calculated and it is found that a substantial amount of iron vacancies can form at thermal equilibrium. These will lead to an increased phonon scattering. To explain the thermal conductivity of FeSi, we consider phonon-phonon, isotope, and phonon-defect scattering to assess possible scattering mechanisms. The calculated thermal conductivities indicate that phonon-defect scattering is important in order to explain the reported experimental values.

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1995-01-01

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Optoelectronic properties and Seebeck coefficient in SnSe thin films

NASA Astrophysics Data System (ADS)

Urmila, K. S.; Namitha, T. A.; Rajani, J.; Philip, R. R.; Pradeep, B.

2016-09-01

SnSe thin films of thickness 180 nm have been deposited on glass substrates by reactive evaporation at an optimized substrate temperature of 523 ± 5 K and pressure of 10-5 mbar. The as-prepared SnSe thin films are characterized for their structural, optical and electrical properties by various experimental techniques. The p-type conductivity, near-optimum direct band gap, high absorption coefficient and good photosensitivity of the SnSe thin film indicate its suitability for photovoltaic applications. The optical constants, loss factor, quality factor and optical conductivity of the films are evaluated. The results of Hall and thermoelectric power measurements are correlated to determine the density of states, Fermi energy and effective mass of carriers and are obtained as 2.8 × 1017 cm-3, 0.03 eV and 0.05m 0 respectively. The high Seebeck coefficient ≈ 7863 μV/K, reasonably good power factor ≈ 7.2 × 10-4 W/(m·K2) and thermoelectric figure of merit ≈ 1.2 observed at 42 K suggests that, on further work, the prepared SnSe thin films can also be considered as a possible candidate for cryogenic thermoelectric applications.

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films

NASA Astrophysics Data System (ADS)

Preissler, Natalie; Bierwagen, Oliver; Ramu, Ashok T.; Speck, James S.

2013-08-01

A comprehensive study of the room-temperature electrical and electrothermal transport of single-crystalline indium oxide (In2O3) and indium tin oxide (ITO) films over a wide range of electron concentrations is reported. We measured the room-temperature Hall mobility μH and Seebeck coefficient S of unintentionally doped and Sn-doped high-quality, plasma-assisted molecular-beam-epitaxy-grown In2O3 for volume Hall electron concentrations nH from 7×1016 cm-3 (unintentionally doped) to 1×1021 cm-3 (highly Sn-doped, ITO). The resulting empirical S(nH) relation can be directly used in other In2O3 samples to estimate the volume electron concentration from simple Seebeck coefficient measurements. The mobility and Seebeck coefficient were modeled by a numerical solution of the Boltzmann transport equation. Ionized impurity scattering and polar optical phonon scattering were found to be the dominant scattering mechanisms. Acoustic phonon scattering was found to be negligible. Fitting the temperature-dependent mobility above room temperature of an In2O3 film with high mobility allowed us to find the effective Debye temperature (ΘD=700 K) and number of phonon modes (NOPML=1.33) that best describe the polar optical phonon scattering. The modeling also yielded the Hall scattering factor rH as a function of electron concentration, which is not negligible (rH≈1.4) at nondegenerate electron concentrations. Fitting the Hall-scattering-factor corrected concentration-dependent Seebeck coefficient S(n) for nondegenerate samples to the numerical solution of the Boltzmann transport equation and to widely used, simplified equations allowed us to extract an effective electron mass of m*=(0.30±0.03)me (with free electron mass me). The modeled mobility and Seebeck coefficient based on polar optical phonon and ionized impurity scattering describes the experimental results very accurately up to electron concentrations of 1019 cm-3, and qualitatively explains a mobility plateau or local maximum around 1020 cm-3. Ionized impurity scattering with doubly charged donors best describes the mobility in our unintentionally doped films, consistent with oxygen vacancies as unintentional shallow donors, whereas singly charged donors best describe our Sn-doped films. Our modeling yields a (phonon-limited) maximum theoretical drift mobility and Hall mobility of μ=190 cm2/Vs and μH=270 cm2/Vs, respectively. Simplified equations for the Seebeck coefficient describe the measured values in the nondegenerate regime using a Seebeck scattering parameter of r=-0.55 (which is consistent with the determined Debye temperature), and provide an estimate of the Seebeck coefficient to lower electron concentrations. The simplified equations fail to describe the Seebeck coefficient around the Mott transition (nMott=5.5×1018 cm-3) from nondegenerate to degenerate electron concentrations, whereas the numerical modeling accurately describes this region.

Response of two-band systems to a single-mode quantized field

NASA Astrophysics Data System (ADS)

Shi, Z. C.; Shen, H. Z.; Wang, W.; Yi, X. X.

2016-03-01

The response of topological insulators (TIs) to an external weakly classical field can be expressed in terms of Kubo formula, which predicts quantized Hall conductivity of the quantum Hall family. The response of TIs to a single-mode quantized field, however, remains unexplored. In this work, we take the quantum nature of the external field into account and define a Hall conductance to characterize the linear response of a two-band system to the quantized field. The theory is then applied to topological insulators. Comparisons with the traditional Hall conductance are presented and discussed.

Thermal Hall conductivity in the spin-triplet superconductor with broken time-reversal symmetry

NASA Astrophysics Data System (ADS)

Imai, Yoshiki; Wakabayashi, Katsunori; Sigrist, Manfred

2017-01-01

Motivated by the spin-triplet superconductor Sr2RuO4 , the thermal Hall conductivity is investigated for several pairing symmetries with broken time-reversal symmetry. In the chiral p -wave phase with a fully opened quasiparticle excitation gap, the temperature dependence of the thermal Hall conductivity has a temperature linear term associated with the topological property directly and an exponential term, which shows a drastic change around the Lifshitz transition. Examining f -wave states as alternative candidates with d =Δ0z ̂(kx2-ky2) (kx±i ky) and Δ0z ̂kxky(kx±i ky) with gapless quasiparticle excitations, we study the temperature dependence of the thermal Hall conductivity, where for the former state the thermal Hall conductivity has a quadratic dependence on temperature, originating from the linear dispersions, in addition to linear and exponential behavior. The obtained result may enable us to distinguish between the chiral p -wave and f -wave states in Sr2RuO4 .

Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures

NASA Astrophysics Data System (ADS)

Thiery, N.; Naletov, V. V.; Vila, L.; Marty, A.; Brenac, A.; Jacquot, J.-F.; de Loubens, G.; Viret, M.; Anane, A.; Cros, V.; Ben Youssef, J.; Beaulieu, N.; Demidov, V. E.; Divinskiy, B.; Demokritov, S. O.; Klein, O.

2018-02-01

We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of Eg≈2 eV. It drops to values about 5 ×103Ω cm at T =400 K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive (p type) at 5 cm2V-1sec-1 and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

NASA Astrophysics Data System (ADS)

Kaneko, Kentaro; Fujita, Shizuo; Hitora, Toshimi

2018-02-01

Corundum-structured oxides have been attracting much attention as next-generation power device materials. A corundum-structured α-Ga2O3 successfully demonstrated power device operations of Schottky barrier diodes (SBDs) with the lowest on-resistance of 0.1 mΩ cm2. The SBDs as a mounting device of TO220 also showed low switching-loss properties with a capacitance of 130 pF. Moreover, the thermal resistance was 13.9 °C/W, which is comparable to that of the SiC TO220 device (12.5 °C/W). On the other hand, corundum-structured α-(Rh,Ga)2O3 showed p-type conductivity, which was confirmed by Hall effect measurements. The Hall coefficient, carrier density, and mobility were 8.22 cm3/C, 7.6 × 1017/cm3, and 1.0 cm2 V-1 s-1, respectively. These values were acceptable for the p-type layer of pn diodes based on α-Ga2O3.

Anomalous DC Hall response in noncentrosymmetric tilted Weyl semimetals

NASA Astrophysics Data System (ADS)

Mukherjee, S. P.; Carbotte, J. P.

2018-03-01

Weyl nodes come in pairs of opposite chirality. For broken time reversal symmetry (TR) they are displaced in momentum space by {Q} and the anomalous DC Hall conductivity σxy is proportional to {Q} at charge neutrality. For finite doping there are additive corrections to σxy which depend on the chemical potential as well as on the tilt (C ) of the Dirac cones and on their relative orientation. If inversion symmetry (I) is also broken the Weyl nodes are shifted in energy by an amount Q0 . This introduces further changes in σxy and we provide simple analytic formulas for these modifications for both type I (C<1 ) and type II (C>1 , overtilted) Weyl. For type I when the Weyl nodes have equal magnitude but oppositely directed tilts, the correction to σxy is proportional to the chemical potential μ and completely independent of the energy shift Q0 . When instead the tilts are parallel, the correction is linear in Q0 and μ drops out. For type II the corrections involve both μ and Q0 , are nonlinear and also involve a momentum cut off. We discuss the implied changes to the Nernst coefficient and to the thermal Hall effect of a finite Q0 .

Balanced electron-hole transport in spin-orbit semimetal SrIrO3 heterostructures

NASA Astrophysics Data System (ADS)

Manca, Nicola; Groenendijk, Dirk J.; Pallecchi, Ilaria; Autieri, Carmine; Tang, Lucas M. K.; Telesio, Francesca; Mattoni, Giordano; McCollam, Alix; Picozzi, Silvia; Caviglia, Andrea D.

2018-02-01

Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5 d oxide SrIrO3 hosts parabolic bands of heavy holes and light electrons in gapped Dirac cones due to the interplay between electron-electron interactions and spin-orbit coupling. We present a multifold approach relying on different experimental techniques and theoretical calculations to disentangle its complex electronic properties. By combining magnetotransport and thermoelectric measurements in a field-effect geometry with first-principles calculations, we quantitatively determine the transport coefficients of different conduction channels. Despite their different dispersion relationships, electrons and holes are found to have strikingly similar transport coefficients, yielding a holelike response under field-effect and thermoelectric measurements and a linear electronlike Hall effect up to 33 T.

Thermoelectric Properties of Electron-Doped SrMnO3 Single Crystals with Perovskite Structure

NASA Astrophysics Data System (ADS)

Suzuki, T.; Sakai, H.; Taguchi, Y.; Tokura, Y.

2012-06-01

Thermoelectric properties have been investigated for single crystals of Sr(Mn1- x Mo x )O3 with the perovskite structure. Similar to (Sr1- x Ce x )MnO3, the Seebeck coefficient for lightly electron-doped compounds ( x ≤ 0.01) is enhanced upon G-type antiferromagnetic ordering, while maintaining metallic conduction. This results in enhancement of the figure of merit ( ZT). On the other hand, the Seebeck coefficient for the more electron-doped compound ( x = 0.025) changes sign from negative to positive within a spin and orbital ordered phase (with C-type antiferromagnetic configuration and Mn 3 z 2 - r 2 type orbital order) as the temperature is lowered, whereas the Hall coefficient remains negative in the whole temperature range. The enhancement of the ZT value in the G-type antiferromagnetic phase implies the possibility for improvement of the thermoelectric efficiency by using the coupling between charge, spin, orbital, and lattice degrees of freedom in strongly correlated electron systems.

The upper limit of thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO(₃- δ/₂).

PubMed

Onoda, Masashige; Tsukahara, Shuichi

2011-02-02

The electronic properties and the thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO(3 - δ/2) with 0.0046 ≤ δ < 0.06 are explored through measurements of x-ray diffraction, electrical resistivity, thermoelectric power, Hall coefficient and magnetic susceptibility. The metallic transport is confirmed to be basically explained through scattering by electron correlations, acoustic phonons and polar optical phonons, where each scattering coefficient is almost linear in the inverse of the effective carrier concentration estimated from the Hall coefficient. The upper limit of the thermoelectric power factor is 2 × 10( - 3) W m( - 1) K( - 2) with the carrier concentration of 2 × 10(20) cm( - 3) at around the Fermi energy comparable to the Debye temperature.

The upper limit of thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO3 - δ/2

NASA Astrophysics Data System (ADS)

Onoda, Masashige; Tsukahara, Shuichi

2011-02-01

The electronic properties and the thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO3 - δ/2 with 0.0046 <= δ < 0.06 are explored through measurements of x-ray diffraction, electrical resistivity, thermoelectric power, Hall coefficient and magnetic susceptibility. The metallic transport is confirmed to be basically explained through scattering by electron correlations, acoustic phonons and polar optical phonons, where each scattering coefficient is almost linear in the inverse of the effective carrier concentration estimated from the Hall coefficient. The upper limit of the thermoelectric power factor is 2 × 10 - 3 W m - 1 K - 2 with the carrier concentration of 2 × 1020 cm - 3 at around the Fermi energy comparable to the Debye temperature.

Hall Plateaus at magic angles in ultraquantum Bismuth

NASA Astrophysics Data System (ADS)

Benoît, Fauqué.

2009-03-01

The behaviour of a three-dimensional electron gas in the presence of a magnetic field strong enough to put all carriers in the first Landau level (i.e. beyond the quantum limit) is a longstanding question of theoretical condensed matter physics [1]. This issue has been recently explored by two high-field experiments on elemental semi-metal Bismuth. In a first study of transport coefficients (which are dominated by hole-like carriers), the Nernst coefficient presented three unexpected maxima that are concomitant with quasi-plateaux in the Hall coefficient [2]. In a second series of experiments, torque magnetometry (which mainly probes the three Dirac valley electron pockets) detected a field-induced phase transition [3]. The full understanding of the electron and hole behaviours above the quantum limit of pure Bi is therefore still under debate. In this talk, we will present our measurement of the Hall resistivity and torque magnetometry with magnetic field up to 31 T and rotating in the trigonal-bisectrix plane [4]. The Hall response is dominated by the hole pockets according to its sign as well as the period and the angular dependence of its quantum oscillations. In the vicinity of the quantum limit, it presents additional anomalies which are the fingerprints of the electron pockets. We found that for particular orientations of the magnetic field (namely ``magic angles''), the Hall response becomes field-independent within the experimental resolution around 20T. This drastic dependence of the plateaux on the field orientation provides strong constraints for theoretical scenarios. [4pt] [1] Bertrand I. Halperin, Japanese Journal of Applied Physics, 26, Supplement 26-3 (1987).[0pt] [2] Kamran Behnia, Luis Balicas, Yakov Kopelevich, Science, 317, 1729 (2008).[0pt] [3] Lu Li, J. G. Checkelsky, Y. S. Hor, C. Uher, A. F. Hebard, R. J. Cava, and N. P. Ong , Science, 321, 5888 (2008).[0pt] [4] Benoît Fauqu'e, Luis Balicas, Ilya Sheikin, Jean Paul Issi and Kamran Behnia, to be published

Approaching quantum anomalous Hall effect in proximity-coupled YIG/graphene/h-BN sandwich structure

NASA Astrophysics Data System (ADS)

Tang, Chi; Cheng, Bin; Aldosary, Mohammed; Wang, Zhiyong; Jiang, Zilong; Watanabe, K.; Taniguchi, T.; Bockrath, Marc; Shi, Jing

2018-02-01

Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions can be acquired by coupling graphene to a magnetic insulator as revealed by the anomalous Hall effect. Here, we show enhanced magnetic proximity coupling by sandwiching graphene between a ferrimagnetic insulator yttrium iron garnet (YIG) and hexagonal-boron nitride (h-BN) which also serves as a top gate dielectric. By sweeping the top-gate voltage, we observe Fermi level-dependent anomalous Hall conductance. As the Dirac point is approached from both electron and hole sides, the anomalous Hall conductance reaches ¼ of the quantum anomalous Hall conductance 2e2/h. The exchange coupling strength is determined to be as high as 27 meV from the transition temperature of the induced magnetic phase. YIG/graphene/h-BN is an excellent heterostructure for demonstrating proximity-induced interactions in two-dimensional electron systems.

Tunneling Anomalous and Spin Hall Effects.

PubMed

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Imaginary part of Hall conductivity in a tilted doped Weyl semimetal with both broken time-reversal and inversion symmetry

NASA Astrophysics Data System (ADS)

Mukherjee, S. P.; Carbotte, J. P.

2018-01-01

We consider a Weyl semimetal with finite doping and tilt within a continuum model Hamiltonian with both broken time-reversal and inversion symmetry. We calculate the absorptive part of the anomalous ac Hall conductivity as a function of photon energy Ω for both type-I and type-II Weyl semimetals. For a given Weyl node, changing the sign of its chirality or of its tilt changes the sign of its contribution to the absorptive Hall conductivity with no change in magnitude. For a noncentrosymmetric system we find that there are ranges of photon energies for which only the positive or only the negative-chirality node contributes to the imaginary (absorptive) part of the Hall conductivity. There are also other photon energies where both chiralities contribute, and there can be other ranges of Ω where there is no absorption associated with the ac Hall conductivity in type-I semimetals and regions where it is instead constant for type-II semimetals. We comment on implications for the absorption of circularly polarized light.

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

NASA Astrophysics Data System (ADS)

Glunk, M.; Daeubler, J.; Schoch, W.; Sauer, R.; Limmer, W.

2009-09-01

We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σxx ranging from the low-conductivity to the high-conductivity regime. The anomalous Hall conductivity σxy(AH) is extracted from the measured longitudinal and Hall resistivities. A transition from σxy(AH)=20Ω-1cm-1 due to the Berry phase effect in the high-conductivity regime to a scaling relation σxy(AH)∝σxx1.6 for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

ThE SYnthesis of R z Fe4- x Co x Sb12 (R: Yb, La, Ce) skutterudites and their thermoelectric properties

NASA Astrophysics Data System (ADS)

Park, Kwan-Ho; Lee, Soonil; Seo, Won-Seon; Shin, Dong-Kil; Kim, Il-Ho

2014-03-01

Rare-earth-filled skutterudites R z Fe4- x Co x Sb12 (R: Yb, La, Ce) were prepared, and their transport and thermoelectric properties were examined. All specimens showed p-type conduction and exhibited a degenerate semiconductor behavior. R0.9Fe3CoSb12 had lower electrical conductivities and higher Seebeck coefficients than RFe4Sb12, which meant that Co led to charge compensation through electron donations. All specimens had positive Hall coefficients, and their carrier concentrations were decreased by charge compensation with increasing Co substitution. The thermal conductivities of R0.9Fe3CoSb12 were lower than those of RFe4Sb12 due to the decreased carrier concentration, as well as the lattice scattering induced by the substitution of Co for Fe. Yb-filled and La-filled skutterudites showed enhanced thermoelectric figures of merit through charge compensation with Co, but Ce-filled skutterudites did not. Yb2˜3+ and La3+ ions required charge compensation to stabilize their skutterudite phases, but Ce3˜4+ ions did not.

The spin-Hall effect and spin-orbit torques in epitaxial Co2FeAl/platinum bilayers

NASA Astrophysics Data System (ADS)

Peterson, T. A.; Liu, C.; McFadden, T.; Palmstrøm, C. J.; Crowell, P. A.

We have performed magnetoresistance measurements on epitaxially grown Co2FeAl/platinum (CFA/Pt) ultrathin ferromagnet/heavy metal bilayers to study the spin-Hall effect in Pt and the accompanying spin-orbit torque (SOT) exerted on the magnetic CFA layer. Specifically, we measure the spin-Hall magnetoresistance in the Pt layer by changing the orientation of the CFA magnetization with respect to the spin current orientation created in the Pt, and we determine the SOT efficiency using a second-harmonic detection technique. Because the latter of the two measurements is proportional to the spin-Hall ratio θSHE while the former is proportional to θSHE2, we are able to extract the bare Pt spin-Hall ratio with no assumptions about the CFA/Pt interface spin mixing conductance. Furthermore, by varying the Pt thickness we show that the results are consistent with resistivity-independent spin-Hall conductivity. Finally, the two measurements in combination allow us to infer a spin-mixing conductance at the CFA/Pt interface of 2 +/- 1 ×1015Ω-1m-2 . The combination of spin-Hall magnetoresistance and SOT measurements allows for a determination of the spin-mixing conductance using only low-frequency transport techniques. This work was supported by STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

Thermoelectric property measurements with computer controlled systems

NASA Technical Reports Server (NTRS)

Chmielewski, A. B.; Wood, C.

1984-01-01

A joint JPL-NASA program to develop an automated system to measure the thermoelectric properties of newly developed materials is described. Consideration is given to the difficulties created by signal drift in measurements of Hall voltage and the Large Delta T Seebeck coefficient. The benefits of a computerized system were examined with respect to error reduction and time savings for human operators. It is shown that the time required to measure Hall voltage can be reduced by a factor of 10 when a computer is used to fit a curve to the ratio of the measured signal and its standard deviation. The accuracy of measurements of the Large Delta T Seebeck coefficient and thermal diffusivity was also enhanced by the use of computers.

Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state

DOE PAGES

Wang, Jing; Lian, Biao; Qi, Xiao-Liang; ...

2015-08-10

The topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in units of $e²/2h$. Here in this paper, we propose that the topological magnetoelectric effect can be realized in the zero-plateau quantum anomalous Hall state of magnetic topological insulators or a ferromagnet-topological insulator heterostructure. The finite-size effect is also studied numerically, where the magnetoelectric coefficient is shown to converge to a quantized value when the thickness of the topological insulator film increases. We further propose a device setupmore » to eliminate nontopological contributions from the side surface.« less

Plasmon Geometric Phase and Plasmon Hall Shift

NASA Astrophysics Data System (ADS)

Shi, Li-kun; Song, Justin C. W.

2018-04-01

The collective plasmonic modes of a metal comprise a simple pattern of oscillating charge density that yields enhanced light-matter interaction. Here we unveil that beneath this familiar facade plasmons possess a hidden internal structure that fundamentally alters its dynamics. In particular, we find that metals with nonzero Hall conductivity host plasmons with an intricate current density configuration that sharply departs from that of ordinary zero Hall conductivity metals. This nontrivial internal structure dramatically enriches the dynamics of plasmon propagation, enabling plasmon wave packets to acquire geometric phases as they scatter. At boundaries, these phases accumulate allowing plasmon waves that reflect off to experience a nonreciprocal parallel shift. This plasmon Hall shift, tunable by Hall conductivity as well as plasmon wavelength, displaces the incident and reflected plasmon trajectories and can be readily probed by near-field photonics techniques. Anomalous plasmon geometric phases dramatically enrich the nanophotonics toolbox, and yield radical new means for directing plasmonic beams.

Epitaxial thin films of Dirac semimetal antiperovskite Cu3PdN

NASA Astrophysics Data System (ADS)

Quintela, C. X.; Campbell, N.; Shao, D. F.; Irwin, J.; Harris, D. T.; Xie, L.; Anderson, T. J.; Reiser, N.; Pan, X. Q.; Tsymbal, E. Y.; Rzchowski, M. S.; Eom, C. B.

2017-09-01

The growth and study of materials showing novel topological states of matter is one of the frontiers in condensed matter physics. Among this class of materials, the nitride antiperovskite Cu3PdN has been proposed as a new three-dimensional Dirac semimetal. However, the experimental realization of Cu3PdN and the consequent study of its electronic properties have been hindered due to the difficulty of synthesizing this material. In this study, we report fabrication and both structural and transport characterization of epitaxial Cu3PdN thin films grown on (001)-oriented SrTiO3 substrates by reactive magnetron sputtering and post-annealed in NH3 atmosphere. The structural properties of the films, investigated by x-ray diffraction and scanning transmission electron microscopy, establish single phase Cu3PdN exhibiting cube-on-cube epitaxy (001)[100]Cu3PdN||(001)[100]SrTiO3. Electrical transport measurements of as-grown samples show metallic conduction with a small temperature coefficient of the resistivity of 1.5 × 10-4 K-1 and a positive Hall coefficient. Post-annealing in NH3 results in the reduction of the electrical resistivity accompanied by the Hall coefficient sign reversal. Using a combination of chemical composition analyses and ab initio band structure calculations, we discuss the interplay between nitrogen stoichiometry and magneto-transport results in the framework of the electronic band structure of Cu3PdN. Our successful growth of thin films of antiperovskite Cu3PdN opens the path to further investigate its physical properties and their dependence on dimensionality, strain engineering, and doping.

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

NASA Astrophysics Data System (ADS)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

NASA Astrophysics Data System (ADS)

Yavari, H.; Mokhtari, M.; Bayervand, A.

2015-03-01

Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry

DOE PAGES

Ma, Eric Yue; Calvo, M. Reyes; Wang, Jing; ...

2015-05-26

The realization of quantum spin Hall effect in HgTe quantum wells is considered a milestone in the discovery of topological insulators. Quantum spin Hall states are predicted to allow current flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction yet to be experimentally verified is the breakdown of the edge conduction under broken time-reversal symmetry. Here we first establish a systematic framework for the magnetic field dependence of electrostatically gated quantum spin Hall devices. We then study edge conduction of an inverted quantum well device under broken time-reversal symmetry using microwave impedance microscopy,more » and compare our findings to a non-inverted device. At zero magnetic field, only the inverted device shows clear edge conduction in its local conductivity profile, consistent with theory. Surprisingly, the edge conduction persists up to 9 T with little change. Finally, this indicates physics beyond simple quantum spin Hall model, including material-specific properties and possibly many-body effects.« less

Domain wall in a quantum anomalous Hall insulator as a magnetoelectric piston

NASA Astrophysics Data System (ADS)

Upadhyaya, Pramey; Tserkovnyak, Yaroslav

2016-07-01

We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall insulator with a magnetic configuration of a domain wall, when contacted by electrical reservoirs, acts as a magnetoelectric piston. A moving domain wall pumps charge current between electrical leads in a closed circuit, while applying an electrical bias induces reciprocal domain-wall motion. This pistonlike action is enabled by a finite reflection of charge carriers via chiral modes imprinted by the domain wall. Moreover, we find that, when compared with the recently discovered spin-orbit torque-induced domain-wall motion in heavy metals, the reflection coefficient plays the role of an effective spin-Hall angle governing the efficiency of the proposed electrical control of domain walls. Quantitatively, this effective spin-Hall angle is found to approach a universal value of 2, providing an efficient scheme to reconfigure the domain-wall chiral interconnects for possible memory and logic applications.

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Yang; Feng, Xiao; Ou, Yunbo

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to amore » quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.« less

Extended carrier lifetimes and diffusion in hybrid perovskites revealed by Hall effect and photoconductivity measurements

PubMed Central

Chen, Y.; Yi, H. T.; Wu, X.; Haroldson, R.; Gartstein, Y. N.; Rodionov, Y. I.; Tikhonov, K. S.; Zakhidov, A.; Zhu, X. -Y.; Podzorov, V.

2016-01-01

Impressive performance of hybrid perovskite solar cells reported in recent years still awaits a comprehensive understanding of its microscopic origins. In this work, the intrinsic Hall mobility and photocarrier recombination coefficient are directly measured in these materials in steady-state transport studies. The results show that electron-hole recombination and carrier trapping rates in hybrid perovskites are very low. The bimolecular recombination coefficient (10−11 to 10−10 cm3 s−1) is found to be on par with that in the best direct-band inorganic semiconductors, even though the intrinsic Hall mobility in hybrid perovskites is considerably lower (up to 60 cm2 V−1 s−1). Measured here, steady-state carrier lifetimes (of up to 3 ms) and diffusion lengths (as long as 650 μm) are significantly longer than those in high-purity crystalline inorganic semiconductors. We suggest that these experimental findings are consistent with the polaronic nature of charge carriers, resulting from an interaction of charges with methylammonium dipoles. PMID:27477058

Extended carrier lifetimes and diffusion in hybrid perovskites revealed by Hall effect and photoconductivity measurements

DOE PAGES

Chen, Y.; Yi, H. T.; Wu, X.; ...

2016-08-01

Impressive performance of hybrid perovskite solar cells reported in recent years still awaits a comprehensive understanding of its microscopic origins. In this work, the intrinsic Hall mobility and photocarrier recombination coefficient are directly measured in these materials in steady-state transport studies. The results show that electron-hole recombination and carrier trapping rates in hybrid perovskites are very low. The bimolecular recombination coefficient (10 –11 to 10 –10 cm 3 s –1) is found to be on par with that in the best direct-band inorganic semiconductors, even though the intrinsic Hall mobility in hybrid perovskites is considerably lower (up to 60 cmmore » 2 V –1 s –1). Measured here, steady-state carrier lifetimes (of up to 3 ms) and diffusion lengths (as long as 650 μm) are significantly longer than those in high-purity crystalline inorganic semiconductors. As a result, we suggest that these experimental findings are consistent with the polaronic nature of charge carriers, resulting from an interaction of charges with methylammonium dipoles.« less

Nonequilibrium Fractional Hall Response After a Topological Quench

NASA Astrophysics Data System (ADS)

Unal, Nur; Mueller, Erich; Oktel, M. O.

When a system is suddenly driven between two topologically different phases, aspects of the original topology survive the quench, but most physical observables (edge currents, Hall conductivity) appear to be non-universal. I will present the non-equilibrium Hall response of a Chern insulator following a quench where the mass term of a single Dirac cone changes sign. In the limit where the physics is dominated by a single Dirac cone, we theoretically find that the Hall conductivity universally changes by two-thirds of the quantum of conductivity. I will analyze this universal behavior by considering the Haldane model, and discuss experimental aspects for its observation in cold atoms. This work is supported by TUBITAK, NSFPHY-1508300, ARO-MURI W9111NF-14-1-0003.

Thermoelectric properties of hot pressed p-type SiGe alloys

NASA Technical Reports Server (NTRS)

Bajgar, Clara; Masters, Richard; Scoville, Nancy; Vandersande, Jan

1991-01-01

This paper presents the results of measurements of electrical resistivity, Seebeck coefficient, thermal conductivity, as well as Hall carrier concentration, and mobility, for hot pressed SiGe 80 at. pct Si-20 at. pct Ge (SiGe) thermoelectric materials containing 0.24-3.0 at. pct boron. The carrier concentration was varied by annealing and quenching at different high temperatures. Figure-of-merit, Z, was found to be 0.60 +/- 0.03 x 10 exp -3/K over a carrier concentration range from 1.8- 3.5 x 10 exp -20/cu cm. This result is very encouraging from a production standpoint, since the dopant concentration is not critical.

Influence of deep level intrinsic defects on the carrier transport in p-type Hg1- xCdxTe

NASA Astrophysics Data System (ADS)

Hoerstel, W.; Klimakow, A.; Kramer, R.

1990-04-01

The magnetic field dependence of the Hall effect in p-type Hg1- xCdxTe is analysed for determining the carrier densities and their mobilities in the mixed conduction range T = 70-250 K. A consistent description of the temperature dependence of the concentrations and mobilities of electrons and holes succeeds by taking into account energy-dependent momentum scattering times in the transport coefficients. Using this formalism, an energy level near 0.7 Eg above the valence band edge caused by intrinsic defects which were influenced by thermal treament is determined and discussed.

Electron transport near the Mott transition in n-GaAs and n-GaN

NASA Astrophysics Data System (ADS)

Romanets, P. N.; Sachenko, A. V.

2016-01-01

In this paper, we study the temperature dependence of the conductivity and the Hall coefficient near the metal-insulator phase transition. A theoretical investigation is performed within the effective mass approximation. The variational method is used to calculate the eigenvalues and eigenfunctions of the impurity states. Unlike previous studies, we have included nonlinear corrections to the screened impurity potential, because the Thomas-Fermi approximation is incorrect for the insulator phase. It is also shown that near the phase transition the exchange interaction is essential. The obtained temperature dependencies explain several experimental measurements in gallium arsenide (GaAs) and gallium nitride (GaN).

Fabrication and characterization of photovoltaic cell with novel configuration ITO/n-CuIn3Se5/p-CIS/In

NASA Astrophysics Data System (ADS)

Geethu, R.; Jacob, R.; Sreenivasan, P. V.; Shripathi, T.; S, Okram G.; Philip, R. R.

2015-02-01

A novel configuration ITO/n-OVC CuIn3Se5/p-CIS/In solar cell has been fabricated by multisource vacuum co-evaporation technique on soda lime glass substrates. The pn junction is formed with ordered vacancy compound as the n counter part for the p type CuInSe2. The structural, compositional, hall coefficient, optical and electrical properties of the p and n layers have been studied respectively by X-ray diffraction, Energy Dispersive Analysis of X rays, optical absorbance and conductivity measurements. Current density-Voltage measurements enabled the determination of efficiency of the device.

Disorder-induced half-integer quantized conductance plateau in quantum anomalous Hall insulator-superconductor structures

NASA Astrophysics Data System (ADS)

Huang, Yingyi; Setiawan, F.; Sau, Jay D.

2018-03-01

A weak superconducting proximity effect in the vicinity of the topological transition of a quantum anomalous Hall system has been proposed as a venue to realize a topological superconductor (TSC) with chiral Majorana edge modes (CMEMs). A recent experiment [Science 357, 294 (2017), 10.1126/science.aag2792] claimed to have observed such CMEMs in the form of a half-integer quantized conductance plateau in the two-terminal transport measurement of a quantum anomalous Hall-superconductor junction. Although the presence of a superconducting proximity effect generically splits the quantum Hall transition into two phase transitions with a gapped TSC in between, in this Rapid Communication we propose that a nearly flat conductance plateau, similar to that expected from CMEMs, can also arise from the percolation of quantum Hall edges well before the onset of the TSC or at temperatures much above the TSC gap. Our Rapid Communication, therefore, suggests that, in order to confirm the TSC, it is necessary to supplement the observation of the half-quantized conductance plateau with a hard superconducting gap (which is unlikely for a disordered system) from the conductance measurements or the heat transport measurement of the transport gap. Alternatively, the half-quantized thermal conductance would also serve as a smoking-gun signature of the TSC.

Tunnelling anomalous and planar Hall effects (Conference Presentation)

NASA Astrophysics Data System (ADS)

Matos-Abiague, Alex; Scharf, Benedikt; Han, Jong E.; Hankiewicz, Ewelina M.; Zutic, Igor

2016-10-01

We theoretically show how the interplay between spin-orbit coupling (SOC) and magnetism can result in a finite tunneling Hall conductance, transverse to the applied bias. For two-dimensional tunnel junctions with a ferromagnetic lead and magnetization perpendicular to the current flow, the detected anomalous Hall voltage can be used to extract information not only about the spin polarization but also about the strength of the interfacial SOC. In contrast, a tunneling current across a ferromagnetic barrier on the surface of a three-dimensional topological insulator (TI) can induce a planar Hall response even when the magnetization is oriented along the current flow[1]. The tunneling nature of the states contributing to the planar Hall conductance can be switched from the ordinary to the Klein regimes by the electrostatic control of the barrier strength. This allows for an enhancement of the transverse response and a giant Hall angle, with the tunneling planar Hall conductance exceeding the longitudinal component. Despite the simplicity of a single ferromagnetic region, the TI/ferromagnet system exhibits a variety of functionalities. In addition to a spin-valve operation for magnetic sensing and storing information, positive, negative, and negative differential conductances can be tuned by properly adjusting the barrier potential and/or varying the magnetization direction. Such different resistive behaviors in the same system are attractive for potential applications in reconfigurable spintronic devices. [1] B. Scharf, A. Matos-Abiague, J. E. Han, E. M. Hankiewicz, and I. Zutic, arXiv:1601.01009 (2016).

Geometry of quantum Hall states: Gravitational anomaly and transport coefficients

DOE Office of Scientific and Technical Information (OSTI.GOV)

Can, Tankut, E-mail: tcan@scgp.stonybrook.edu; Laskin, Michael; Wiegmann, Paul B.

2015-11-15

We show that universal transport coefficients of the fractional quantum Hall effect (FQHE) can be understood as a response to variations of spatial geometry. Some transport properties are essentially governed by the gravitational anomaly. We develop a general method to compute correlation functions of FQH states in a curved space, where local transformation properties of these states are examined through local geometric variations. We introduce the notion of a generating functional and relate it to geometric invariant functionals recently studied in geometry. We develop two complementary methods to study the geometry of the FQHE. One method is based on iteratingmore » a Ward identity, while the other is based on a field theoretical formulation of the FQHE through a path integral formalism.« less

NASA's 2004 Hall Thruster Program

NASA Technical Reports Server (NTRS)

Jacobson, David T.; Manzella, David H.; Hofer, Richard R.; Peterson, Peter Y.

2004-01-01

An overview of NASA's Hall thruster research and development tasks conducted during fiscal year 2004 is presented. These tasks focus on: raising the technology readiness level of high power Hall thrusters, developing a moderate-power/ moderate specific impulse Hall thruster, demonstrating high-power/high specific impulse Hall thruster operation, and addressing the fundamental technical challenges of emerging Hall thruster concepts. Programmatic background information, technical accomplishments and out year plans for each program element performed under the sponsorship of the In-Space Transportation Program, Project Prometheus, and the Energetics Project are provided.

Topological transitions for lattice bosons in a magnetic field

PubMed Central

Huber, Sebastian D.; Lindner, Netanel H.

2011-01-01

The Hall response provides an important characterization of strongly correlated phases of matter. We study the Hall conductivity of interacting bosons on a lattice subjected to a magnetic field. We show that for any density or interaction strength, the Hall conductivity is characterized by an integer. We find that the phase diagram is intersected by topological transitions between different values of this integer. These transitions lead to surprising effects, including sign reversal of the Hall conductivity and extensive regions in the phase diagram where it acquires a negative sign, which implies that flux flow is reversed in these regions—vortices there flow upstream. Our findings have immediate applications to a wide range of phenomena in condensed matter physics, which are effectively described in terms of lattice bosons. PMID:22109548

Integer, fractional, and anomalous quantum Hall effects explained with Eyring's rate process theory and free volume concept.

PubMed

Hao, Tian

2017-02-22

The Hall effects, especially the integer, fractional and anomalous quantum Hall effects, have been addressed using Eyring's rate process theory and free volume concept. The basic assumptions are that the conduction process is a common rate controlled "reaction" process that can be described with Eyring's absolute rate process theory; the mobility of electrons should be dependent on the free volume available for conduction electrons. The obtained Hall conductivity is clearly quantized as with prefactors related to both the magnetic flux quantum number and the magnetic quantum number via the azimuthal quantum number, with and without an externally applied magnetic field. This article focuses on two dimensional (2D) systems, but the approaches developed in this article can be extended to 3D systems.

Semiclassical theory of Hall viscosity

NASA Astrophysics Data System (ADS)

Biswas, Rudro

2014-03-01

Hall viscosity is an intriguing stress response in quantum Hall systems and is predicted to be observable via the conductivity in an inhomogeneous electric field. This has been studied extensively using a range of techniques, such as adiabatic transport, effective field theories, and Kubo formulae. All of these are, however, agnostic as to the distinction between strongly correlated quantum Hall states and non-interacting ones, where the effect arises due to the fundamental non-commuting nature of velocities and orbit positions in a magnetic field. In this talk I shall develop the semiclassical theory of quantized cyclotron orbits drifting in an applied inhomogeneous electric field and use it to provide a clear physical picture of how single particle properties in a magnetic field contribute to the Hall viscosity-dependence of the conductivity.

Suitable reverberation times for halls for rock and pop music.

PubMed

Adelman-Larsen, Niels Werner; Thompson, Eric R; Gade, Anders C

2010-01-01

The existing body of literature regarding the acoustic design of concert halls has focused almost exclusively on classical music, although there are many more performances of popular music, including rock and pop. Objective measurements were made of the acoustics of 20 rock music venues in Denmark and a questionnaire was used in a subjective assessment of those venues with professional rock musicians and sound engineers as expert listeners. Correlations between the measurements show that clarity, including bass frequencies down to 63 Hz, is important for the general impression of the acoustics of the hall. The best-rated halls in the study have reverberation times that are approximately frequency independent from 0.6 to 1.2 s for hall volumes from 1000 to 6000 m(3). The worst rated halls in the study had significantly higher reverberation times in the 63 and 125 Hz bands. Since most audiences at rock concerts are standing, absorption coefficients were measured with a standing audience from 63 Hz to 4 kHz. These measurements showed that a standing audience absorbs about five times as much energy in mid-/high-frequency bands as in low-frequency bands.

Estimation of Phonon and Carrier Thermal Conductivities for Bulk Thermoelectric Materials Using Transport Properties

NASA Astrophysics Data System (ADS)

Otsuka, Mioko; Homma, Ryoei; Hasegawa, Yasuhiro

2017-05-01

The phonon and carrier thermal conductivities of thermoelectric materials were calculated using the Wiedemann-Franz law, Boltzmann equation, and a method we propose in this study called the Debye specific heat method. We prepared polycrystalline n-type doped bismuth telluride (BiTe) and bismuth antimony (BiSb) bulk alloy samples and measured six parameters (Seebeck coefficient, resistivity, thermal conductivity, thermal diffusivity, magneto-resistivity, and Hall coefficient). The carrier density and mobility were estimated for calculating the carrier thermal conductivity by using the Boltzmann equation. In the Debye specific heat method, the phonon thermal diffusivity, and thermal conductivity were calculated from the temperature dependence of the effective specific heat by using not only the measured thermal conductivity and Debye model, but also the measured thermal diffusivity. The carrier thermal conductivity was also evaluated from the phonon thermal conductivity by using the specific heat. The ratio of carrier thermal conductivity to thermal conductivity was evaluated for the BiTe and BiSb samples, and the values obtained using the Debye specific heat method at 300 K were 52% for BiTe and <5.5% for BiSb. These values are either considerably larger or smaller than those obtained using other methods. The Dulong-Petit law was applied to validate the Debye specific heat method at 300 K, which is significantly greater than the Debye temperature of the BiTe and BiSb samples, and it was confirmed that the phonon specific heat at 300 K has been accurately reproduced using our proposed method.

Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

PubMed

Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

2016-06-07

Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

Electronic transport properties of MFe2As2 (M = Ca, Eu, Sr) at ambient and high pressures up to 20 GPa

NASA Astrophysics Data System (ADS)

Morozova, Natalia V.; Karkin, Alexander E.; Ovsyannikov, Sergey V.; Umerova, Yuliya A.; Shchennikov, Vladimir V.; Mittal, R.; Thamizhavel, A.

2015-12-01

We experimentally investigated the electronic transport properties of four iron pnictide crystals, namely, EuFe2As2, SrFe2As2, and CaFe2As2 parent compounds, and superconducting CaFe1.94Co0.06As2 at ambient and high pressures up to 20 GPa. At ambient pressure we examined the electrical resistivity, Hall and magnetoresistance effects of the samples in a temperature range from 1.5 to 380 K in high magnetic fields up to 13.6 T. In this work we carried out the first simultaneous investigations of the in-plane and out-of-plane Hall coefficients, and found new peculiarities of the low-temperature magnetic and structural transitions that occur in these materials. In addition, the Hall coefficient data suggested that the parent compounds are semimetals with a multi-band conductivity that includes hole-type and electron-type bands. We measured the pressure dependence of the thermoelectric power (the Seebeck effect) of these samples up to 20 GPa, i.e. across the known phase transition from the tetragonal to the collapsed tetragonal lattice. The high-pressure behavior of the thermopower of EuFe2As2 and CaFe2As2 showing the p-n sign inversions was consistent with the semimetal model described above. By means of thermopower, we found in single-crystalline CaFe2As2 direct evidence of the band structure crossover related to the formation of As-As bonds along the c-axis on the tetragonal → collapsed tetragonal phase transition near 2 GPa. We showed that this feature is distinctly observable only in high-quality samples, and already for re-pressurization cycles this crossover was strongly smeared because of the moderate deterioration of the sample. We also demonstrated by means of thermopower that the band structure crossover that should accompany the tetragonal → collapsed tetragonal phase transition in EuFe2As2 near 8 GPa is hardly visible even in high-quality single crystals. This behavior may be related to a gradual valence change of the Eu ions under pressure that leads to an injection of free electrons and the steady shift of the conduction to n-type.

Synthesis and thermoelectric properties of tantalum-doped ZrNiSn half-Heusler alloys

NASA Astrophysics Data System (ADS)

Zhao, Degang; Zuo, Min; Wang, Zhenqing; Teng, Xinying; Geng, Haoran

2014-04-01

The Ta-doped ZrNiSn half-Heusler alloys, Zr1-xTaxNiSn, were synthesized by arc melting and hot-press sintering. Microstructure of Zr1-xTaxNiSn compounds were analyzed and the thermoelectric (TE) properties of Zr1-xTaxNiSn compounds were measured from room temperature to 823 K. The electrical conductivity increased with increasing Ta content. The Seebeck coefficient of Zr1-xTaxNiSn compounds was sharply decreased with increasing Ta content. The Hall mobility was proportional to T-1.5 above 673 K, indicating that the acoustic phonon scattering was predominant in the temperature range. The thermal conductivity was effectively depressed by introducing Ta substitution. The figure of merit of ZrNiSn compounds was improved due to the decreased thermal conductivity and increased electrical conductivity. The maximum ZT value of 0.60 was achieved for Zr0.97Ta0.03NiSn sample at 823 K.

Spin Hall Effect in Doped Semiconductor Structures

NASA Astrophysics Data System (ADS)

Tse, Wang-Kong; Das Sarma, Sankar

2006-03-01

We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

Synchronization of spin-transfer torque oscillators by spin pumping, inverse spin Hall, and spin Hall effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elyasi, Mehrdad; Bhatia, Charanjit S.; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg

2015-02-14

We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.

Study of the thermoelectric properties of lead selenide doped with boron, gallium, indium, or thallium.

PubMed

Zhang, Qian; Cao, Feng; Lukas, Kevin; Liu, Weishu; Esfarjani, Keivan; Opeil, Cyril; Broido, David; Parker, David; Singh, David J; Chen, Gang; Ren, Zhifeng

2012-10-24

Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 10(19) cm(-3). No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor ~2.5 × 10(-3) W m(-1) K(-2) was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of ~1.2 at ~873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl(3+) ions and the increased grain boundary density after ball milling. The highest p-type ZT value was ~1.0 at ~723 K.

Preparation and Thermoelectric Properties of the Skutterudite-Related Phase Ru(0.5)Pd(0.5)Sb3

NASA Technical Reports Server (NTRS)

Caillat, T.; Kulleck, J.; Borshchevsky, A.; Fleurial, J.-P.

1996-01-01

A new skutterudite phase Ru(0.5)Pd(0.5)Sb3 was prepared. This new phase adds to a large number of already known materials with the skutterudite structure which have shown good potential for thermoelectric applications. Single phase, polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal-expansion coefficient, and differential thermal analysis measurements. Ru(0.5)Pd(0.5)Sb3 has a cubic lattice, space group Im3 (T(sup 5, sub h)), with a = 9.298 A and decomposes at about 920 K. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured on hot-pressed samples over a wide range of temperatures. Preliminary results show that Ru(0.5)Pd(0.5)Sb3 behaves as a heavily doped semiconductor with an estimated band gap of about 0.6 eV. The lattice thermal conductivity of Ru(0.5)Pd(0.5)Sb3 is substantially lower than that of the binary isostructural compounds CoSb3 and IrSb3. The unusually low thermal conductivity might be explained by additional hole and charge transfer phonon scattering in this material. The potential of this material for thermoelectric applications is discussed.

The non-commutative topology of two-dimensional dirty superconductors

NASA Astrophysics Data System (ADS)

De Nittis, Giuseppe; Schulz-Baldes, Hermann

2018-01-01

Non-commutative analysis tools have successfully been applied to the integer quantum Hall effect, in particular for a proof of the stability of the Hall conductance in an Anderson localization regime and of the bulk-boundary correspondence. In this work, these techniques are implemented to study two-dimensional dirty superconductors described by Bogoliubov-de Gennes Hamiltonians. After a thorough presentation of the basic framework and the topological invariants, Kubo formulas for the thermal, thermoelectric and spin Hall conductance are analyzed together with the corresponding edge currents.

Optical Boron Nitride Insulator Erosion Characterization of a 200 W Xenon Hall Thruster

DTIC Science & Technology

2005-05-01

Hall thruster boron nitride insulator is evaluated as a diagnostic for real-time evaluation of thruster insulator erosion. Three Hall thruster plasma control variables are examined: ion energy (discharge potential), ion flux (propellant flow), and plasma conductivity (magnetic field strength). The boron emission, and hence the insulator erosion rate, varies linearly with ion energy and ion flux. A minimum erosion rate appears at intermediate magnetic field strengths. This may indicate that local plasma conductivity significantly affects the divergence

Anomalous Change of Hall Coefficient in Overdoped La2-xSrxCu1-yZnyO4 around x = 0.2

NASA Astrophysics Data System (ADS)

Tonishi, Jun; Suzuki, Takao; Goto, Takayuki

2006-09-01

The Hall coefficient (RH) has been measured in 0.5% Zn-doped La2-xSrxCu0.995Zn0.005O4 under high magnetic fields up to 12 T. With decreasing temperature, RH increases and begins to decrease below a temperature TRH. This characteristic temperature TRH has the local maximum around x = 0.195, and this Sr-concentration coincides with that the superconducting transition temperature is slightly suppressed. This behavior is quite similar to the phenomena observed in the stripe phase in x ˜ 0.12. These results suggest that the anomalous decrease of RH around x = 0.195 observed in this study is responsible for the "1/4"-anomaly [as reported by Kakinuma et al., Phys. Rev. B 59, 1491 (1999).].

Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO{sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Papadogianni, Alexandra; Bierwagen, Oliver; White, Mark E.

2015-12-21

We propose a simple method based on the combination of Hall and Seebeck measurements to estimate the thickness of a carrier system within a semiconductor film. As an example, this method can distinguish “bulk” carriers, with homogeneous depth distribution, from “sheet” carriers, that are accumulated within a thin layer. The thickness of the carrier system is calculated as the ratio of the integral sheet carrier concentration, extracted from Hall measurements, to the volume carrier concentration, derived from the measured Seebeck coefficient of the same sample. For rutile SnO{sub 2}, the necessary relation of Seebeck coefficient to volume electron concentration inmore » the range of 3 × 10{sup 17} to 3 × 10{sup 20 }cm{sup −3} has been experimentally obtained from a set of single crystalline thin films doped with varying Sb-doping concentrations and unintentionally doped bulk samples, and is given as a “calibration curve.” Using this calibration curve, our method demonstrates the presence of interface electrons in homogeneously deep-acceptor (In) doped SnO{sub 2} films on sapphire substrates.« less

Thermoelectric properties of lanthanum sulfide

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, A.; Parker, J.; Zoltan, A.; Zoltan, D.

1985-01-01

The Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect have been studied in gamma-phase La(3-x)S4(LaS/y/) for compositions with x in the range from 0.04 to 0.3 (y in the range from 1.35 to 1.48) in order to ascertain its suitability for high-temperature (300 to 1400 K) thermoelectric energy conversion. In this temperature and composition range the material behaves as an extrinsic semiconductor whose degenerate carrier concentration is controlled by the stoichiometric ratio of La to S. A maximum figure-of-merit (Z) of approximately 0.0005 per K at a composition x = 0.3, y = 1.48 (LaS/1.48/) was obtained.

Unconventional topological Hall effect in skyrmion crystals caused by the topology of the lattice

NASA Astrophysics Data System (ADS)

Göbel, Börge; Mook, Alexander; Henk, Jürgen; Mertig, Ingrid

2017-03-01

The hallmark of a skyrmion crystal (SkX) is the topological Hall effect (THE). In this article we predict and explain an unconventional behavior of the topological Hall conductivity in SkXs. In simple terms, the spin texture of the skyrmions causes an inhomogeneous emergent magnetic field whose associated Lorentz force acts on the electrons. By making the emergent field homogeneous, the THE is mapped onto the quantum Hall effect (QHE). Consequently, each electronic band of the SkX is assigned to a Landau level. This correspondence of THE and QHE allows us to explain the unconventional behavior of the THE of electrons in SkXs. For example, a skyrmion crystal on a triangular lattice exhibits a quantized topological Hall conductivity with steps of 2 .e2/h below and with steps of 1 .e2/h above the van Hove singularity. On top of this, the conductivity shows a prominent sign change at the van Hove singularity. These unconventional features are deeply connected to the topology of the structural lattice.

Reversed Hall effect and plasma conductivity in the presence of charged impurities

NASA Astrophysics Data System (ADS)

Yaroshenko, V. V.; Lühr, H.

2018-01-01

The Hall conductivity of magnetized plasma can be strongly suppressed by the contribution of negatively charged particulates (referred further as "dust"). Once the charge density accumulated by the dust exceeds a certain threshold, the Hall component becomes negative, providing a reversal in the Hall current. Such an effect is unique for dust-loaded plasmas, and it can hardly be achieved in electronegative plasmas. Further growth of the dust density leads to an increase in both the absolute value of the Hall and Pedersen conductivities, while the field-aligned component is decreased. These modifications enhance the role of transverse electric currents and reduce the anisotropy of a magnetized plasma when loaded with charged impurities. The findings provide an important basis for studying the generation of electric currents and transport phenomena in magnetized plasma systems containing small charged particulates. They can be relevant for a wide range of applications from naturally occurring space plasmas in planetary magnetospheres and astrophysical objects to laboratory dusty plasmas (Magnetized Dusty Plasma Experiment) and to technological and fusion plasmas.

The impact of finite-area inhomogeneities on resistive and Hall measurement

NASA Astrophysics Data System (ADS)

Koon, Daniel

2013-03-01

I derive an iterative expression for the electric potential in an otherwise homogeneous thin specimen as the result of a finite-area inhomogeneity in either the direct conductance, the Hall conductance, or both. This expression extends to the finite-area regime the calculation of the effect of such inhomogeneities on the measurement error in the sheet resistance and Hall sheet resistance. I then test these results on the exactly-solvable case of a circular inhomogeneity equally distant from the four electrodes of either a square four-point-probe array on an infinitely large conducting specimen or a circular van der Pauw specimen with symmetrically-placed electrodes.

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

Topological phase transitions and quantum Hall effect in the graphene family

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaksmore » which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.« less

Topological phase transitions and quantum Hall effect in the graphene family

NASA Astrophysics Data System (ADS)

Ledwith, P.; Kort-Kamp, W. J. M.; Dalvit, D. A. R.

2018-04-01

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaks which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. This complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.

Topological phase transitions and quantum Hall effect in the graphene family

DOE PAGES

Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

2018-04-15

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaksmore » which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.« less

Magnetic flux and heat losses by diffusive, advective, and Nernst effects in MagLIF-like plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velikovich, A. L., E-mail: sasha.velikovich@nrl.navy.mil; Giuliani, J. L., E-mail: sasha.velikovich@nrl.navy.mil; Zalesak, S. T.

2014-12-15

The MagLIF approach to inertial confinement fusion involves subsonic/isobaric compression and heating of a DT plasma with frozen-in magnetic flux by a heavy cylindrical liner. The losses of heat and magnetic flux from the plasma to the liner are thereby determined by plasma advection and gradient-driven transport processes, such as thermal conductivity, magnetic field diffusion and thermomagnetic effects. Theoretical analysis based on obtaining exact self-similar solutions of the classical collisional Braginskii's plasma transport equations in one dimension demonstrates that the heat loss from the hot plasma to the cold liner is dominated by the transverse heat conduction and advection, andmore » the corresponding loss of magnetic flux is dominated by advection and the Nernst effect. For a large electron Hall parameter ω{sub e}τ{sub e} effective diffusion coefficients determining the losses of heat and magnetic flux are both shown to decrease with ω{sub e}τ{sub e} as does the Bohm diffusion coefficient, which is commonly associated with low collisionality and two-dimensional transport. This family of exact solutions can be used for verification of codes that model the MagLIF plasma dynamics.« less

Strategies for Evaluating a Freshman Studies Program.

ERIC Educational Resources Information Center

Ketkar, Kusum; Bennett, Shelby D.

1989-01-01

The study developed an economic model for the evaluation of Seaton Hall University's freshman studies program. Two techniques used to evaluate the economic success of the program are break-even analysis and elasticity coefficient. (Author/MLW)

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

NASA Astrophysics Data System (ADS)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Topological states of matter in two-dimensional fermionic systems

NASA Astrophysics Data System (ADS)

Beugeling, W.

2012-09-01

Topological states of matter in two-dimensional systems are characterised by the different properties of the edges and the bulk of the system: The edges conduct electrical current while the bulk is insulating. The first well-known example is the quantum Hall effect, which is induced by a perpendicular magnetic field that generates chiral edge channels along which the current propagates. Each channel contributes one quantum to the Hall conductivity. Due to the chirality, i.e., all currents propagate in the same direction, backscattering due to impurities is absent, and the Hall conductivity carried by the edge states is therefore protected from perturbations. Another example is the quantum spin Hall effect, induced by intrinsic spin-orbit coupling in absence of a magnetic field. There the edge states are helical, i.e., spin up and down currents propagate oppositely. In this case, the spin Hall conductivity is quantized, and it is protected by time-reversal symmetry from backscattering due to impurities. In Chapter 2 of the thesis, I discuss the combined effect of the magnetic field and intrinsic spin-orbit coupling. In addition, I discuss the influence of the Rashba spin-orbit coupling and of the Zeeman effect. In particular, I show that in absence of magnetic impurities, a weaker form of the quantum spin Hall state persists in the presence of a magnetic field. In addition, I show that the intrinsic spin-orbit coupling and the Zeeman effect act similarly in the low-flux limit. I furthermore analyse the phase transitions induced by intrinsic spin-orbit coupling at a fixed magnetic field, thereby explaining the change of the Hall and spin Hall conductivities at the transition. I also study the subtle interplay between the effects of the different terms in the Hamiltonian. In Chapter 3, I investigate an effective model for HgTe quantum wells doped with Mn ions. Without doping, HgTe quantum wells may exhibit the quantum spin Hall effect, depending on the thickness of the well. The doping with Mn ions modifies the behaviour of the system in two ways: First, the quantum spin Hall gap is reduced in size, and secondly, the system becomes paramagnetic. The latter effect causes a bending of the Landau levels, which is responsible for reentrant behaviour of the (spin) Hall conductivity. I investigate the different types of reentrant behaviour, and I estimate the experimental resolvability of this effect. In Chapter 4, I present a framework to describe the fractional quantum Hall effect in systems with multiple internal degrees of freedom, e.g., spin or pseudospin. This framework describes the so-called flux attachment in terms of a Chern-Simons theory in Hamiltonian form, proposed earlier for systems without internal degrees of freedom. Here, I show a generalization of these results, by replacing the number of attached flux quanta by a matrix. In particular, the plasma analogy proposed by Laughlin still applies, and Kohn’s theorem remains valid. I also show that the results remain valid when the flux-attachment matrix is singular.

Pilot study: Exposure and materiality of the secondary room and its impact in the impulse response of coupled-volume concert halls

NASA Astrophysics Data System (ADS)

Ermann, Michael; Johnson, Marty E.

2002-05-01

What does one room sound like when it is partially exposed to another (acoustically coupled)? More specifically, this research aims to quantify how operational and design decisions impact aural impressions in the design of concert halls with acoustical coupling. By adding a second room to a concert hall, and designing doors to control the sonic transparency between the two rooms, designers can create a new, coupled acoustic. Concert halls use coupling to achieve a variable, longer, and distinct reverberant quality for their musicians and listeners. For this study, a coupled-volume shoebox concert hall was conceived with a fixed geometric volume, form, and primary-room sound absorption. Aperture size and secondary-room sound-absorption levels were established as variables. Statistical analysis of sound decay in this simulated hall suggests a highly sensitive relationship between the double-sloped condition and (1) Architectural composition, as defined by the aperture size exposing the chamber and (2) Materiality, as defined by the sound absorbance in the coupled volume. Preliminary calculations indicate that the double-sloped sound decay condition only appears when the total aperture area is less than 1.5% of the total shoebox surface area and the average absorption coefficient of the coupled volume is less than 0.07.

Anomalous Nernst and Hall effects in magnetized platinum and palladium

NASA Astrophysics Data System (ADS)

Guo, G. Y.; Niu, Q.; Nagaosa, N.

2014-06-01

We study the anomalous Nernst effect (ANE) and anomalous Hall effect (AHE) in proximity-induced ferromagnetic palladium and platinum which is widely used in spintronics, within the Berry phase formalism based on the relativistic band-structure calculations. We find that both the anomalous Hall (σxyA) and Nernst (αxyA) conductivities can be related to the spin Hall conductivity (σxyS) and band exchange splitting (Δex) by relations σxyA=ΔexeℏσxyS(EF)' and αxyA=-π23kB2TΔexℏσxys(μ )'', respectively. In particular, these relations would predict that the σxyA in the magnetized Pt (Pd) would be positive (negative) since the σxyS(EF)' is positive (negative). Furthermore, both σxyA and αxyA are approximately proportional to the induced spin magnetic moment (ms) because the Δex is a linear function of ms. Using the reported ms in the magnetized Pt and Pd, we predict that the intrinsic anomalous Nernst conductivity (ANC) in the magnetic platinum and palladium would be gigantic, being up to ten times larger than, e.g., iron, while the intrinsic anomalous Hall conductivity (AHC) would also be significant.

An Approach for the Adaptive Solution of Optimization Problems Governed by Partial Differential Equations with Uncertain Coefficients

DTIC Science & Technology

2012-05-01

Acad. Sci. Fennicae. Ser. A. I. Math.-Phys., 1947(37):79, 1947. [65] G. E. Karniadakis, C.-H. Su, D. Xiu, D. Lucor, C. Schwab, and R. A. Todor ...treatment of uncertainties in aerodynamic design. AIAA Journal, 47(3):646–654, 2009. [106] C. Schwab and R. A. Todor . Karhunen-Loève approximation of random...integrals. Prentice-Hall Inc., Englewood Cliffs, N.J., 1971. Prentice-Hall Series in Automatic Computation. [113] R. A. Todor and C. Schwab

Anisotropic Magnus Force in Type-II Superconductors with Planar Defects

NASA Astrophysics Data System (ADS)

Monroy, Ricardo Vega; Gomez, Eliceo Cortés

2015-02-01

The effect of planar defects on the Magnus force in type-II superconductors is studied. It is shown that the deformation of the vortex due to the presence of a planar defect leads to a local decrease in the mean free path of electrons in the vortex. This effect reduces the effective Magnus coefficient in normal direction to the planar defect, leading to an anisotropic regime of the Hall effect. The presented developments here can qualitatively explain experimental observations of the anisotropic Hall effect in high- T c superconductors in the mixed state.

Y{sub 3}Fe{sub 5}O{sub 12} spin pumping for quantitative understanding of pure spin transport and spin Hall effect in a broad range of materials (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhui; Wang, Hailong; Hammel, P. Chris

2015-05-07

Using Y{sub 3}Fe{sub 5}O{sub 12} (YIG) thin films grown by our sputtering technique, we study dynamic spin transport in nonmagnetic, ferromagnetic, and antiferromagnetic (AF) materials by ferromagnetic resonance spin pumping. From both inverse spin Hall effect and damping enhancement, we determine the spin mixing conductance and spin Hall angle in many metals. Surprisingly, we observe robust spin conduction in AF insulators excited by an adjacent YIG at resonance. This demonstrates that YIG spin pumping is a powerful and versatile tool for understanding spin Hall physics, spin-orbit coupling, and magnetization dynamics in a broad range of materials.

Nonequilibrium Hall Response After a Topological Quench

NASA Astrophysics Data System (ADS)

Unal, F. Nur; Mueller, Erich; Oktel, M. O.

2017-04-01

We theoretically study the Hall response of a lattice system following a quench where the topology of a filled band is suddenly changed. In the limit where the physics is dominated by a single Dirac cone, we find that the change in the Hall conductivity is two-thirds of the quantum of conductivity. We explore this universal behavior in the Haldane model, and discuss cold-atom experiments for its observation. Beyond linear response, the Hall effect crosses over from fractional to integer values. We investigate finite-size effects, and the role of the harmonic confinement. Furthermore, we explore the magnetic field quenches in ladders formed in synthetic dimensions. This work is supported by TUBITAK, NSFPHY-1508300, ARO-MURI W9111NF-14-1-0003.

Characterization of background carriers in InAs/GaSb quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junbin; Wu, Xiaoguang; Wang, Guowei

2016-03-07

The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to twomore » orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.« less

NASA HERMeS Hall Thruster Electrical Configuration Characterization

NASA Technical Reports Server (NTRS)

Peterson, Peter Y.; Kamhawi, Hani; Huang, Wensheng; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Hofer, Richard

2015-01-01

The NASA Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in-space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This paper describes the electrical configuration testing of the HERMeS TDU-1 Hall thruster in NASA Glenn Research Center's Vacuum Facility 5. The three electrical configurations examined were 1) thruster body tied to facility ground, 2) thruster floating, and 3) thruster body electrically tied to cathode common. The HERMeS TDU-1 Hall thruster was also configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

Pressure-induced superconductivity in parent CaFeAsF single crystals

NASA Astrophysics Data System (ADS)

Gao, Bo; Ma, Yonghui; Mu, Gang; Xiao, Hong

2018-05-01

Flouroarsenide CaFeAsF is a parent compound of the 1111 type of iron-based superconductors. It is similar to the parent LaFeAsO, but it is oxygen-free. To date, studies of pressure-induced effects have only focused on pure and doped polycrystalline CaFeAsF samples. Here, we carried out high-pressure electrical resistivity and Hall coefficient measurements up to 48.2 GPa on single crystals of CaFeAsF. The structural transition temperature Tstr decreased monotonically upon increasing the pressure, and reached ˜60 K at 9.6 GPa. Superconductivity emerged suddenly at 8.6 GPa with the Tc ,onset˜25.7 K , which decreased monotonically with increasing pressure to 5.7 K under 48.2 GPa. Moreover, just after the appearance of superconductivity, the Hall coefficient at 40 K started to decrease with increasing pressure, while keeping its sign negative persisting up to 48.2 GPa.

Advanced Non-Destructive Assessment Technology to Determine the Aging of Silicon Containing Materials for Generation IV Nuclear Reactors

NASA Astrophysics Data System (ADS)

Koenig, T. W.; Olson, D. L.; Mishra, B.; King, J. C.; Fletcher, J.; Gerstenberger, L.; Lawrence, S.; Martin, A.; Mejia, C.; Meyer, M. K.; Kennedy, R.; Hu, L.; Kohse, G.; Terry, J.

2011-06-01

To create an in-situ, real-time method of monitoring neutron damage within a nuclear reactor core, irradiated silicon carbide samples are examined to correlate measurable variations in the material properties with neutron fluence levels experienced by the silicon carbide (SiC) during the irradiation process. The reaction by which phosphorus doping via thermal neutrons occurs in the silicon carbide samples is known to increase electron carrier density. A number of techniques are used to probe the properties of the SiC, including ultrasonic and Hall coefficient measurements, as well as high frequency impedance analysis. Gamma spectroscopy is also used to examine residual radioactivity resulting from irradiation activation of elements in the samples. Hall coefficient measurements produce the expected trend of increasing carrier concentration with higher fluence levels, while high frequency impedance analysis shows an increase in sample impedance with increasing fluence.

Development of New Generation of Perspireable Skin

DTIC Science & Technology

2015-02-20

Coefficient of Thermal Expansion (CTE) material simulating Reinforced Carbon - Carbon Composites (RCC). These tiles made of different materials...Very low thermal expansion coefficient materials, Annu. Rev. Mater. Sci., 1989, 19, 59-81 3. Mittal, R. and Chaplot S.L., Lattice dynamical...thermal expansion from0.3 to 1050 Kelvin in ZrW2O8, Science, 1996, 272, 90-92 6. G. Savage, Carbon - carbon composites, New York: Chapman & Hall, pp

Reduced Spin Hall Effects from Magnetic Proximity.

DOE PAGES

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; ...

2015-03-26

We investigate temperature-dependent spin pumping and inverse spin Hall effects in thin Pt and Pd in contact with Permalloy. Our experiments show a decrease of the spin Hall effect with decreasing temperature, which is attributed to a temperature-dependent proximity effect. The spin Hall angle decreases from 0.086 at room temperature to 0.042 at 10 K for Pt and is nearly negligible at 10 K for Pd. By first-principle calculations, we show that the spin Hall conductivity indeed reduces by increasing the proximity-induced spin magnetic moments for both Pt and Pd. This work highlights the important role of proximity-induced magnetic orderingmore » to spin Hall phenomena in Pt and Pd.« less

Thermal and galvanomagnetic properties of monocrystals CuInGa{sub 2}Te{sub 5}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abilov, Ch. I., E-mail: cabilov@yahoo.com; Hasanova, M. Sh., E-mail: mhsh28@mail.ru; Huseynova, N. T.

By the methods of the physic-chemical analysis, determination of density and by measurement of micro hardness the character of chemical interaction in the In{sub 2}Te{sub 3}-Cu{sub 2}Ga{sub 4}Te{sub 7} system has been investigated and its faze diagram has been plotted. It is established that the system is quasibinary, of eutectic type. In the system the chemical combination of CuGa{sub 2}InTe{sub 5} composition melting congruently at 855°C is generated. There have been revealed solid solutions boundary of which based on In{sub 2}Te{sub 3} reach 5mol% at room temperatures. Temperature dependences of electric conductivity, the coefficient of thermo-emf, general heat conductivity, themore » Hall mobility of charge carriers.The mechanisms of electron-phonon diffusion in crystals of its compound have been revealed.« less

A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric pressure

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Grigor'ev, D. V.; Korotaev, A. G.; Kokhanenko, A. P.; Tarasenko, V. F.; Shulepov, M. A.

2012-03-01

The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·1016 cm3 and mobility 500 cm2·V-1·s-1 is studied. The measurement of the electrophysical parameters of the MCT specimens upon irradiation shows that a layer exhibiting the n-type conduction is formed in the near-surface region of the epitaxial films. After 600 pulses and more, the thickness and the parameters of the layer are such that the measured field dependence of the Hall coefficient corresponds to the material of the n-type conduction. Analysis of the preliminary results reveals that the foregoing nanosecond volume discharge in the air at atmospheric pressure is promising for modification of electro-physical MCT properties.

Nonlinearity in the effect of an inhomogeneous Hall angle

NASA Astrophysics Data System (ADS)

Koon, Daniel W.

2007-03-01

The differential equation for the electric potential in a conducting material with an inhomogeneous Hall angle is extended to the large-field limit. This equation is solved for a square specimen, using a successive over-relaxation [SOR] technique for matrices of up to 101x101 size, and the Hall weighting function -- the effect of local pointlike perturbations on the measured Hall angle -- is calculated as both the unperturbed Hall angle, θH, and the perturbation, δθH, exceed the linear, small angle limit. Preliminary results show that the Hall angle varies by no more than 5% if both | θH |<1 and | δθH |<1. Thus, previously calculated results for the Hall weighting function can be used for most materials in all but the most extreme magnetic fields.

Hall effect measurements on thermoelectric Ca{sub 3}Co{sub 4}O{sub 9}: On how to determine the charge carrier concentration in strongly correlated misfit cobaltites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrade, Matthias, E-mail: matthias.schrade@smn.uio.no; Department of Chemistry, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 26, 0371 Oslo; Norby, Truls

The Hall coefficient R{sub H} and electrical conductivity of misfit calcium cobalt oxide (Ca{sub 2}CoO{sub 3−δ}){sub q}(CoO{sub 2}) (CCO) were measured at room temperature for different oxygen vacancy concentrations δ. Based on these and numerous previous results, it is shown that the charge carrier concentrations n obtained by the classical formula R{sub H} = 1/ne are between 3 and 6 × 10{sup 20} cm{sup −3} and thereby much lower than those derived by other experimental techniques and fail to explain the observed electric properties of CCO. We show that the experimental results are well described using an earlier proposed t–J-model for strongly correlated electrons onmore » a triangular lattice. The hopping parameter t for CCO was found to be ≈ −20 K and the charge carrier concentration of fully oxidized CCO to be 5.7 × 10{sup 21} cm{sup −3} (0.41 hole type carriers per formula unit), in agreement with other experimental techniques.« less

Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N.; Dresselhaus, M. S.

2015-02-01

The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18-600 nm) of p-type topological insulator Bi2Te3 thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18-100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi2Te3 quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi2Te3 and are inherent to topological insulators.

Spin Hall Effect in Doped Semiconductor Structures

NASA Astrophysics Data System (ADS)

Tse, Wang-Kong; Das Sarma, S.

2006-02-01

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as σxySJ/σxySS˜(ℏ/τ)/ɛF, with τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining σs/σc˜10-3-10-4, where σs(c) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)]SCIEAS0036-807510.1126/science.1105514 in n-doped 3D GaAs system.

Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

NASA Astrophysics Data System (ADS)

Hammond, Joseph Wilson

2000-10-01

Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from 500°C to 800°C. The sensors displayed slight drift in long term baseline stability and good long term sensitivity stability (14 days). Long term operation (30 days) at elevated temperatures had no noticeable effect on the thin film structure.

Sheath oscillation characteristics and effect on near-wall conduction in a krypton Hall thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Fengkui, E-mail: fengkuizhang@163.com; Kong, Lingyi; Li, Chenliang

2014-11-15

Despite its affordability, the krypton Hall-effect thruster in applications always had problems in regard to performance. The reason for this degradation is studied from the perspective of the near-wall conductivity of electrons. Using the particle-in-cell method, the sheath oscillation characteristics and its effect on near-wall conduction are compared in the krypton and xenon Hall-effect thrusters both with wall material composed of BNSiO{sub 2}. Comparing these two thrusters, the sheath in the krypton-plasma thruster will oscillate at low electron temperatures. The near-wall conduction current is only produced by collisions between electrons and wall, thereby causing a deficiency in the channel current.more » The sheath displays spatial oscillations only at high electron temperature; electrons are then reflected to produce the non-oscillation conduction current needed for the krypton-plasma thruster. However, it is accompanied with intensified oscillations.« less

Numerical analysis of Hall effect on the performance of magnetohydrodynamic heat shield system based on nonequilibrium Hall parameter model

NASA Astrophysics Data System (ADS)

Li, Kai; Liu, Jun; Liu, Weiqiang

2017-01-01

Magnetohydrodynamic (MHD) heat shield system, a novel thermal protection technique in the hypersonic field, has been paid much attention in recent years. In the real flight condition, not only the Lorentz force but also the Hall electric field is induced by the interaction between ionized air post shock and magnetic field. In order to analyze the action mechanisms of the Hall effect, numerical methods of coupling thermochemical nonequilibrium flow field with externally applied magnetic field as well as the induced electric field are constructed and validated. Based on the nonequilibrium model of Hall parameter, numerical simulations of the MHD heat shield system is conducted under two different magnetic induction strengths (B0=0.2 T, 0.5 T) on a reentry capsule forebody. Results show that, the Hall effect is the same under the two magnetic induction strengths when the wall is assumed to be conductive. For this case, with the Hall effect taken into account, the Lorentz force counter stream diminishes a lot and the circumferential component dominates, resulting that the heat flux and shock-off distance approach the case without MHD control. However, for the insulating wall, the Hall effect acts in different ways under these two magnetic induction strengths. For this case, with the Hall effect taken into account, the performance of MHD heat shield system approaches the case neglecting the Hall effect when B0 equals 0.2 T. Such performance becomes worse when B0 equals 0.5 T and the aerothermal environment on the capsule shoulder is even worse than the case without MHD control.

Quasi-one-dimensional Hall physics in the Harper–Hofstadter–Mott model

NASA Astrophysics Data System (ADS)

Kozarski, Filip; Hügel, Dario; Pollet, Lode

2018-04-01

We study the ground-state phase diagram of the strongly interacting Harper–Hofstadter–Mott model at quarter flux on a quasi-one-dimensional lattice consisting of a single magnetic flux quantum in y-direction. In addition to superfluid phases with various density patterns, the ground-state phase diagram features quasi-one-dimensional analogs of fractional quantum Hall phases at fillings ν = 1/2 and 3/2, where the latter is only found thanks to the hopping anisotropy and the quasi-one-dimensional geometry. At integer fillings—where in the full two-dimensional system the ground-state is expected to be gapless—we observe gapped non-degenerate ground-states: at ν = 1 it shows an odd ‘fermionic’ Hall conductance, while the Hall response at ν = 2 consists of the transverse transport of a single particle–hole pair, resulting in a net zero Hall conductance. The results are obtained by exact diagonalization and in the reciprocal mean-field approximation.

Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Kampert, E.; Law, J.; Jmerik, V. N.; Paturi, P.; Wang, X.; Yoshikawa, A.; Ivanov, S. V.

2018-01-01

Electrical properties of N-polar undoped and Mg-doped InN layers and In-polar undoped InN layers grown by plasma-assisted molecular beam epitaxy (PA MBE) were studied. Transport parameters of the surface and interface layers were determined from the measurements of the Hall coefficient and resistivity as well as the Shubnikov-de Haas oscillations at magnetic fields up to 60 T. Contributions of the 2D surface, 3D near-interface, and 2D interface layers to the total conductivity of the InN films were defined and discussed to be dependent on InN surface polarity, Mg doping, and PA MBE growth conditions.

Synthesis and Thermoelectric Properties of Partially Double-Filled (Ce1- z Pr z ) y Fe4- x Co x Sb12 Skutterudites

NASA Astrophysics Data System (ADS)

Cha, Ye-Eun; Shin, Dong-Kil; Kim, Il-Ho

2018-06-01

Partially double-filled p-type (Ce1- z Pr z ) y Fe4- x Co x Sb12 ( z = 0.25, 0.75; y = 0.8; x = 0, 0.5, 1.0) skutterudites were synthesized by encapsulated melting and consolidated by hot pressing. The microstructure, phase, charge transport characteristics, and thermoelectric properties of the hot-pressed specimens were analyzed. Detailed measurements indicated that the skutterudite phase was successfully synthesized, but a small amount of a secondary phase (FeSb2) was also identified. However, the amount of the FeSb2 phase decreased with an increase in the Co substitution. Unlike for the filled Ce1- z Pr z Fe4- x Co x Sb12 skutterudites with y = 1, the (Ce,Pr)Sb2 phases were not formed by partial filling with Ce/Pr. The electrical conductivity decreased with increasing temperature, similar to the behavior shown by degenerate semiconductors. The Hall coefficient and the Seebeck coefficients were positive, indicating that all specimens exhibited p-type characteristics. The electrical conductivity and the electronic thermal conductivity decreased with increasing Pr filling and Co substitution because of the decreased carrier concentration caused by charge compensation. A maximum dimensionless figure of merit, ZTmax = 0.84, was obtained at 623 K for (Ce0.75Pr0.25)0.8Fe3CoSb12.

Wind-tunnel Tests of a Hall High-life Wing

NASA Technical Reports Server (NTRS)

Weick, Fred E; Sanders, Robert

1932-01-01

Wind-tunnel tests have been made to find the lift, drag, and center-of-pressure characteristics of a Hall high-lift wing model. The Hall wing is essentially a split-flap airfoil with an internal air passage. Air enters the passage through an opening in the lower surface somewhat back of and parallel to the leading edge, and flows out through an opening made by deflecting the rear portion of the under surface downward as a flap. For ordinary flight conditions the front opening and the rear flap can be closed, providing in effect a conventional airfoil (the Clark Y in this case). The tests were made with various flap settings and with the entrance to the passage both open and closed. The highest lift coefficient found, C(sub L) = 2.08, was obtained with the passage closed.

Attitudes of Residence Hall Students toward Student-Athletes: Implications for Advising, Training and Programming. Research Report #19-89.

ERIC Educational Resources Information Center

Engstrom, Cathy McHugh; Sedlacek, William E.

The study was conducted to assess residence hall student attitudes toward student-athletes at a predominantly white, eastern public institution. A total of 180 students living in traditional residence halls, suites, and apartments were sent the Situational Attitude Scale--Student-Athlete of whom 115 returned usable responses. Results showed that…

Can Hall effect trigger Kelvin-Helmholtz instability in sub-Alfvénic flows?

NASA Astrophysics Data System (ADS)

Pandey, B. P.

2018-05-01

In the Hall magnetohydrodynamics, the onset condition of the Kelvin-Helmholtz instability is solely determined by the Hall effect and is independent of the nature of shear flows. In addition, the physical mechanism behind the super- and sub-Alfvénic flows becoming unstable is quite different: the high-frequency right circularly polarized whistler becomes unstable in the super-Alfvénic flows whereas low-frequency, left circularly polarized ion-cyclotron wave becomes unstable in the presence of sub-Alfvénic shear flows. The growth rate of the Kelvin-Helmholtz instability in the super-Alfvénic case is higher than the corresponding ideal magnetohydrodynamic rate. In the sub-Alfvénic case, the Hall effect opens up a new, hitherto inaccessible (to the magnetohydrodynamics) channel through which the partially or fully ionized fluid can become Kelvin-Helmholtz unstable. The instability growth rate in this case is smaller than the super-Alfvénic case owing to the smaller free shear energy content of the flow. When the Hall term is somewhat smaller than the advection term in the induction equation, the Hall effect is also responsible for the appearance of a new overstable mode whose growth rate is smaller than the purely growing Kelvin-Helmholtz mode. On the other hand, when the Hall diffusion dominates the advection term, the growth rate of the instability depends only on the Alfvén -Mach number and is independent of the Hall diffusion coefficient. Further, the growth rate in this case linearly increases with the Alfvén frequency with smaller slope for sub-Alfvénic flows.

Thermoelectric Properties of Complex Zintl Phases

NASA Astrophysics Data System (ADS)

Snyder, G. Jeffrey

2008-03-01

Complex Zintl phases make ideal thermoelectric materials because they can exhibit the necessary ``electron-crystal, phonon-glass'' properties required for high thermoelectric efficiency. Complex crystal structures can lead to high thermoelectric figure of merit (zT) by having extraordinarily low lattice thermal conductivity. A recent example is the discovery that Yb14MnSb11, a complex Zintl compound, has twice the zT as the SiGe based material currently in use at NASA. The high temperature (300K - 1300K) electronic properties of Yb14MnSb11 can be understood using models for heavily doped semiconductors. The free hole concentration, confirmed by Hall effect measurements, is set by the electron counting rules of Zintl and the valence of the transition metal (Mn^+2). Substitution of nonmagnetic Zn^+2 for the magnetic Mn^+2 reduces the spin-disorder scattering and leads to increased zT (10%). The reduction of spin-disorder scattering is consistent with the picture of Yb14MnSb11 as an underscreened Kondo lattice as derived from low temperature measurements. The hole concentration can be reduced by the substitution of Al^+3 for Mn^+2, which leads to an increase in the Seebeck coefficient and electrical resistivity consistent with models for degenerate semiconductors. This leads to further improvements (about 25%) in zT and a reduction in the temperature where the zT peaks. The peak in zT is due to the onset of minority carrier conduction and can be correlated with reduction in Seebeck coefficient, increase in electrical conductivity and increase in thermal conductivity due to bipolar thermal conduction.

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

PubMed Central

Han, Mi-Kyung; Lee, Da-Hee; Kim, Sung-Jin

2017-01-01

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at % CuI and 1/2x at % Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K, and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κtot) of co-doped samples (κtot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (κtot ~ 1.5 W/m∙K at 300 K) and undoped Bi2Te3 (κtot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping. PMID:29072613

Thermoelectric Properties of Bi₂Te₃: CuI and the Effect of Its Doping with Pb Atoms.

PubMed

Han, Mi-Kyung; Jin, Yingshi; Lee, Da-Hee; Kim, Sung-Jin

2017-10-26

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi₂Te₃, n -type Bi₂Te₃ co-doped with x at % CuI and 1/2 x at % Pb ( x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi₂Te₃ were measured in the temperature range from 300 K to 523 K, and compared to corresponding x % of CuI-doped Bi₂Te₃ and undoped Bi₂Te₃. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi₂Te₃ rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κ tot ) of co-doped samples (κ tot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi₂Te₃ (κ tot ~ 1.5 W/m∙K at 300 K) and undoped Bi₂Te₃ (κ tot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi₂Te 3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi₂Te 3 and its operating temperature can be controlled by co-doping.

Master equation for open two-band systems and its applications to Hall conductance

NASA Astrophysics Data System (ADS)

Shen, H. Z.; Zhang, S. S.; Dai, C. M.; Yi, X. X.

2018-02-01

Hall conductivity in the presence of a dephasing environment has recently been investigated with a dissipative term introduced phenomenologically. In this paper, we study the dissipative topological insulator (TI) and its topological transition in the presence of quantized electromagnetic environments. A Lindblad-type equation is derived to determine the dynamics of a two-band system. When the two-band model describes TIs, the environment may be the fluctuations of radiation that surround the TIs. We find the dependence of decay rates in the master equation on Bloch vectors in the two-band system, which leads to a mixing of the band occupations. Hence the environment-induced current is in general not perfectly topological in the presence of coupling to the environment, although deviations are small in the weak limit. As an illustration, we apply the Bloch-vector-dependent master equation to TIs and calculate the Hall conductance of tight-binding electrons in a two-dimensional lattice. The influence of environments on the Hall conductance is presented and discussed. The calculations show that the phase transition points of the TIs are robust against the quantized electromagnetic environment. The results might bridge the gap between quantum optics and topological photonic materials.

Thermally driven anomalous Hall effect transitions in FeRh

NASA Astrophysics Data System (ADS)

Popescu, Adrian; Rodriguez-Lopez, Pablo; Haney, Paul M.; Woods, Lilia M.

2018-04-01

Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here, we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall, and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the antiferromagnetic state and a sign change in the spin Hall conductivity across the transition are found. It is suggested that the FeRh can be used as a spin current detector capable of differentiating the spin Hall effect from other anomalous transverse effects. The implications of this material and its thermally driven phases as a spin current detection scheme are also discussed.

Measuring Thermoelectric Properties Automatically

NASA Technical Reports Server (NTRS)

Chmielewski, A.; Wood, C.

1986-01-01

Microcomputer-controlled system speeds up measurements of Hall voltage, Seebeck coefficient, and thermal diffusivity in semiconductor compounds for thermoelectric-generator applications. With microcomputer system, large data base of these parameters gathered over wide temperature range. Microcomputer increases measurement accuracy, improves operator productivity, and reduces test time.

The microwave Hall effect measured using a waveguide tee

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coppock, J. E.; Anderson, J. R.; Johnson, W. B.

2016-03-14

This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8–12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phasemore » when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d.c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobilities ranged from 270 to 3000 cm{sup 2}/(V s).« less

Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

Hall-Effect Thruster Simulations with 2-D Electron Transport and Hydrodynamic Ions

NASA Technical Reports Server (NTRS)

Mikellides, Ioannis G.; Katz, Ira; Hofer, Richard H.; Goebel, Dan M.

2009-01-01

A computational approach that has been used extensively in the last two decades for Hall thruster simulations is to solve a diffusion equation and energy conservation law for the electrons in a direction that is perpendicular to the magnetic field, and use discrete-particle methods for the heavy species. This "hybrid" approach has allowed for the capture of bulk plasma phenomena inside these thrusters within reasonable computational times. Regions of the thruster with complex magnetic field arrangements (such as those near eroded walls and magnets) and/or reduced Hall parameter (such as those near the anode and the cathode plume) challenge the validity of the quasi-one-dimensional assumption for the electrons. This paper reports on the development of a computer code that solves numerically the 2-D axisymmetric vector form of Ohm's law, with no assumptions regarding the rate of electron transport in the parallel and perpendicular directions. The numerical challenges related to the large disparity of the transport coefficients in the two directions are met by solving the equations in a computational mesh that is aligned with the magnetic field. The fully-2D approach allows for a large physical domain that extends more than five times the thruster channel length in the axial direction, and encompasses the cathode boundary. Ions are treated as an isothermal, cold (relative to the electrons) fluid, accounting for charge-exchange and multiple-ionization collisions in the momentum equations. A first series of simulations of two Hall thrusters, namely the BPT-4000 and a 6-kW laboratory thruster, quantifies the significance of ion diffusion in the anode region and the importance of the extended physical domain on studies related to the impact of the transport coefficients on the electron flow field.

Coherent radar estimates of high latitude field-aligned currents: the importance of conductance gradients

NASA Astrophysics Data System (ADS)

Kosch, M.; Nielsen, E.

Two bi-static VHF radar systems STARE and SABRE have been employed to estimate ionospheric electric field distributions in the geomagnetic latitude range 61 1 - 69 3 degrees over Scandinavia corresponding to the global Region 2 current system 173 days of data from all four radars have been analysed during the period 1982 to 1986 The average magnetic field-aligned currents have been computed as a function of the Kp and Ae indices using an empirical model of ionospheric Pedersen and Hall conductance taking into account conductance gradients The divergence of horizontal Pedersen currents and Hall conductance gradients have approximately the same importance for generating the Region 2 field-aligned currents Pedersen conductance gradients have a significant modifying effect A case study of field-aligned currents has been performed using the STARE radar system to obtain the instantaneous ionospheric electric field distribution in the vicinity of an auroral arc The instantaneous Hall conductance was estimated from the Scandinavian Magnetometer Array This study clearly shows that even for quiet steady state geomagnetic conditions conductance gradients are important modifiers of magnetic field-aligned currents

Hall effect analysis in irradiated silicon samples with different resistivities

NASA Astrophysics Data System (ADS)

Borchi, E.; Bruzzi, M.; Dezillie, B.; Lazanu, S.; Li, Z.; Pirollo, S.

1999-08-01

The changes induced by neutron irradiation in n- and p-type silicon samples with starting resistivities from 10 /spl Omega/-cm up to 30 k/spl Omega/-cm, grown using different techniques, as float-zone (FZ), Czochralski (CZ) and epitaxial, have been analyzed by Van der Pauw and Hall effect measurements. Increasing the fluence, each set of samples evolves toward a quasi-intrinsic p-type material. This behavior has been explained in the frame of a two-level model, that considers the introduction during irradiation of mainly two defects. A deep acceptor and a deep donor, probably related to the divacancy and to the C/sub i/O/sub i/ complex, are placed in the upper and lower half of the forbidden gap, respectively. This simple model explains quantitatively the data on resistivity and Hall coefficient of each set of samples up to the fluence of /spl ap/10/sup 14/ n/cm/sup 2/.

Optimizing the coupled effects of Hall-Petch and precipitation strengthening in a Al 0.3 CoCrFeNi high entropy alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gwalani, B.; Soni, Vishal; Lee, Michael

2017-05-01

A successful demonstration of applying integrated strengthening using Hall-Petch strengthening (grains size effect) and precipitation strengthening is shown in the fcc based high entropy alloy (HEA) Al0.3CoCrFeNi, leading to quantitative determinations of the Hall-Petch coefficients for both hardness and tensile yield strength, aswell as the enhancements in the yield strength fromtwo distinct types of ordered precipitates, L12 and B2. An excellent combination of yield strength (~490MPa), ultimate tensile strength (~850MPa), and ductility (~45% elongation) was achieved by optimizing and coupling both strengtheningmechanisms, resulting from a refined grain size as well as both L12 and B2 ordered precipitates. This opens upmore » new avenues for the future development of HEAs, with the appropriate balance of properties required for engineering applications.« less

Anomalous Hall effect scaling in ferromagnetic thin films

NASA Astrophysics Data System (ADS)

Grigoryan, Vahram L.; Xiao, Jiang; Wang, Xuhui; Xia, Ke

2017-10-01

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

Modeling an Iodine Hall Thruster Plume in the Iodine Satellite (ISAT)

NASA Technical Reports Server (NTRS)

Choi, Maria

2016-01-01

An iodine-operated 200-W Hall thruster plume has been simulated using a hybrid-PIC model to predict the spacecraft surface-plume interaction for spacecraft integration purposes. For validation of the model, the plasma potential, electron temperature, ion current flux, and ion number density of xenon propellant were compared with available measurement data at the nominal operating condition. To simulate iodine plasma, various collision cross sections were found and used in the model. While time-varying atomic iodine species (i.e., I, I+, I2+) information is provided by HP Hall simulation at the discharge channel exit, the molecular iodine species (i.e., I2, I2+) are introduced as Maxwellian particles at the channel exit. Simulation results show that xenon and iodine plasma plumes appear to be very similar under the assumptions of the model. Assuming a sticking coefficient of unity, iodine deposition rate is estimated.

Evidence for the absence of electron-electron Coulomb interaction quantum correction to the anomalous Hall effect in Co2FeSi Heusler-alloy thin films

NASA Astrophysics Data System (ADS)

Hazra, Binoy Krishna; Kaul, S. N.; Srinath, S.; Raja, M. Manivel; Rawat, R.; Lakhani, Archana

2017-11-01

Electrical (longitudinal) resistivity ρx x, at H =0 and H =80 kOe, anomalous Hall resistivity ρxy A H, and magnetization M , have been measured at different temperatures in the range 5-300 K on the Co2FeSi (CFS) Heusler-alloy thin films, grown on Si(111) substrate, with thickness ranging from 12 to 100 nm. At fixed fields H =0 and H =80 kOe, ρx x(T ) goes through a minimum at T =Tmin (which depends on the film thickness) in all the CFS thin films. In sharp contrast, both the anomalous Hall coefficient RA and ρxy A H monotonously increase with temperature without exhibiting a minimum. Elaborate analyses of ρx x, RA, and ρxy A H establishes the following. (i) The enhanced electron-electron Coulomb interaction (EEI) quantum correction (QC) is solely responsible for the upturn in "zero-field" and "in-field" ρx x(T ) at T

NASA HERMeS Hall Thruster Electrical Configuration Characterization

NASA Technical Reports Server (NTRS)

Peterson, Peter; Kamhawi, Hani; Huang, Wensheng; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Hofer, Richard

2016-01-01

NASAs Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This presentation will cover the electrical configuration testing of the TDU-1 HERMeS Hall thruster in NASA Glenn Research Centers Vacuum Facility 5. The three electrical configurations examined are the thruster body tied to facility ground, thruster floating, and finally the thruster body electrically tied to cathode common. The TDU-1 HERMeS was configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

Observation of the fractional quantum Hall effect in graphene.

PubMed

Bolotin, Kirill I; Ghahari, Fereshte; Shulman, Michael D; Stormer, Horst L; Kim, Philip

2009-11-12

When electrons are confined in two dimensions and subject to strong magnetic fields, the Coulomb interactions between them can become very strong, leading to the formation of correlated states of matter, such as the fractional quantum Hall liquid. In this strong quantum regime, electrons and magnetic flux quanta bind to form complex composite quasiparticles with fractional electronic charge; these are manifest in transport measurements of the Hall conductivity as rational fractions of the elementary conductance quantum. The experimental discovery of an anomalous integer quantum Hall effect in graphene has enabled the study of a correlated two-dimensional electronic system, in which the interacting electrons behave like massless chiral fermions. However, owing to the prevailing disorder, graphene has so far exhibited only weak signatures of correlated electron phenomena, despite intense experimental and theoretical efforts. Here we report the observation of the fractional quantum Hall effect in ultraclean, suspended graphene. In addition, we show that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap. These newly discovered quantum states offer the opportunity to study correlated Dirac fermions in graphene in the presence of large magnetic fields.

Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System

NASA Astrophysics Data System (ADS)

Gusev, G. M.; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.

2010-04-01

We study the transport properties of HgTe-based quantum wells containing simultaneously electrons and holes in a magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity σxy≈0 and in a minimum of diagonal conductivity σxx at ν=νp-νn=0, where νn and νp are the electron and hole Landau level filling factors. We suggest that the transport at the CNP point is determined by electron-hole “snake states” propagating along the ν=0 lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in a random magnetic field with a zero mean value.

Optimal Decay of Wannier functions in Chern and Quantum Hall Insulators

NASA Astrophysics Data System (ADS)

Monaco, Domenico; Panati, Gianluca; Pisante, Adriano; Teufel, Stefan

2018-01-01

We investigate the localization properties of independent electrons in a periodic background, possibly including a periodic magnetic field, as e. g. in Chern insulators and in quantum Hall systems. Since, generically, the spectrum of the Hamiltonian is absolutely continuous, localization is characterized by the decay, as {|x| → ∞} , of the composite (magnetic) Wannier functions associated to the Bloch bands below the Fermi energy, which is supposed to be in a spectral gap. We prove the validity of a localization dichotomy in the following sense: either there exist exponentially localized composite Wannier functions, and correspondingly the system is in a trivial topological phase with vanishing Hall conductivity, or the decay of any composite Wannier function is such that the expectation value of the squared position operator, or equivalently of the Marzari-Vanderbilt localization functional, is {+ ∞} . In the latter case, the Bloch bundle is topologically non-trivial, and one expects a non-zero Hall conductivity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Y.; Yi, H. T.; Wu, X.

Impressive performance of hybrid perovskite solar cells reported in recent years still awaits a comprehensive understanding of its microscopic origins. In this work, the intrinsic Hall mobility and photocarrier recombination coefficient are directly measured in these materials in steady-state transport studies. The results show that electron-hole recombination and carrier trapping rates in hybrid perovskites are very low. The bimolecular recombination coefficient (10 –11 to 10 –10 cm 3 s –1) is found to be on par with that in the best direct-band inorganic semiconductors, even though the intrinsic Hall mobility in hybrid perovskites is considerably lower (up to 60 cmmore » 2 V –1 s –1). Measured here, steady-state carrier lifetimes (of up to 3 ms) and diffusion lengths (as long as 650 μm) are significantly longer than those in high-purity crystalline inorganic semiconductors. As a result, we suggest that these experimental findings are consistent with the polaronic nature of charge carriers, resulting from an interaction of charges with methylammonium dipoles.« less

Spin Hall effect and Landau spectrum of Dirac electrons in bismuth

NASA Astrophysics Data System (ADS)

Fuseya, Yuki

2015-03-01

Bismuth has played an important role in solid-state physics. Many key phenomena were first discovered in bismuth, such as diamagnetism, Seebeck, Nernst, Shubnikov-de Haas, and de Haas-van Alphen effects. These phenomena result from particular electronic states of bismuth. The strong spin-orbit interaction (~ 1.5eV) causes strong spin-dependent interband couplings resulting in an anomalous spin magnetic moment. We investigate the spin Hall effect and the angular dependent Landau spectrum of bismuth paying special attention to the effect of the anomalous spin magnetic moment. It is shown that the spin Hall insulator is possible and there is a fundamental relationship between the spin Hall conductivity and orbital diamagnetism in the insulating state of the Dirac electrons. Based on this theoretical finding, the magnitude of spin Hall conductivity is estimated for bismuth by that of orbital susceptibility. The magnitude of spin Hall conductivity turns out to be as large as 104Ω-1 cm-1, which is about 100 times larger than that of Pt. It is also shown that the ratio of the Zeeman splitting to the cyclotron energy, which reflects the effect of crystalline spin-orbit interaction, for holes at the T-point can be larger than 1.0 (the maximum of previous theories) and exhibit strong angular dependence, which gives a possible solution to the long-standing mystery of holes at the T-point. In collaboration with Masao Ogata, Hidetoshi Fukuyama, Zengwei Zhu, Benoît Fauqué, Woun Kang, and Kamran Behnia. Supported by JSPS (KAKENHI 24244053, 25870231, and 13428660).

Co-doping of CVD diamond with boron and sulfur

NASA Astrophysics Data System (ADS)

Eaton, Sally Catherine

Boron is well-established as a p-type dopant in diamond, but attempts to find a viable n-type dopant remain unsuccessful. In 1999, sulfur was reported to give n-type conductivity. However, later measurements indicated that the samples contained boron and were p-type. Recently, we showed that diamond co-doped with sulfur and small quantities of boron shows n-type conductivity, which was established by Mott-Schottky analyses, thermoelectric effect, Hall measurements, scanning tunneling spectroscopy (STS), and UV open-circuit photo-potential. At higher boron concentrations, a transition to p-type behavior is observed due to overcompensation. Experiments performed without boron in the feed gas or without residual boron in the reactor chamber showed no sulfur incorporation and no change in conductivity. There is evidence that the excess sulfur concentration in the near-surface region is not stable. At room temperature and below, the activation energies range from 0.06 to 0.12 eV. Above 400K there is an irreversible loss in conductivity and the activation energy increases to approximately 1.3 eV. Additionally, we observed by SIMS that there exists a concentration gradient in sulfur with film depth. This sulfur concentration gradient is also observed in our electrical measurements. STS shows a decrease in conductivity with film depth and Hall effect measurements show both p-type and n-type coefficients for samples which are n-type in the near-surface region. The flat-band potential obtained from the Mott-Schottky experiments is only 1 to 1.5 V more negative on the electrochemical scale than that for boron-doped diamond. This implies that the Fermi level is only 1 to 1.5 eV higher than the Fermi level in boron-doped diamond. This observation implies that the n-type conductivity is not by excitation of electrons to the conduction band, but by an alternate mechanism that occurs in the middle of the band gap. One such possibility is an acceptor impurity band. Electrons from individual donor states can be excited into this acceptor band where they are free to move. This mechanism would create n-type conductivity even if the Fermi level was low in the bandgap.

Characterization of Hg1-xCdxTe heterostructures by thermoelectric measurements

NASA Astrophysics Data System (ADS)

Baars, J.; Brink, D.; Edwall, D. D.; Bubulac, L. O.

1993-08-01

P-on-n mercury cadmium telluride (MCT) heterostructures grown by MOCVD with As and In as n- and p-type dopants, respectively, are examined by measuring the Seebeck and Hall coefficients between 20 and 320K. The results are analyzed regarding doping and composition of the layers by least squares fitting the experimental profiles with the calculated temperature dependencies. The electron and hole densities of the layers are calculated taking into account Fermi-Dirac statistics, a nonparabolic conduction band, a parabolic valence band, a discrete acceptor level, and fully ionized donors. For the Seebeck coefficient, the relation we previously showed to be valid for p-type MCT1 is used. This relation relies on the thermoelectric effect in a temperature gradient resulting from the diffusion of nondegenerate carriers scattered by LO-phonons. It also fits the observed thermoelectric properties of n-type MCT in a wide temperature range. The doping and structural parameters determined from the thermoelectric measurements agreed very well with As and In profiles obtained from secondary ion mass spectroscopy measurements and the data obtained from analyses of infrared transmission measurements.

Advanced methods for preparation and characterization of infrared detector materials

NASA Technical Reports Server (NTRS)

Broerman, J. G.; Morris, B. J.; Meschter, P. J.

1983-01-01

Crystals were prepared by the Bridgman-Stockbarger method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady-state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of solute redistribution during the crystal growth of the alloys. Measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Experiments were conducted to determine the ternary phase equilibria in selected regions of the Hg-Cd-Te constitutional phase diagram. Electron and hole mobilities as functions of temperature were analyzed to establish charge-carrier scattering probabilities. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge-carrier concentration, charge-carrier mobilities, Hall coefficient, and Dermi Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Spectroscopic study of Pbs nano-structured layer prepared by Pld utilized as a Hall-effect magnetic sensor

NASA Astrophysics Data System (ADS)

Atwa, D. M.; Aboulfotoh, N.; El-magd, A. Abo; Badr, Y.

2013-10-01

Lead sulfide (PbS) nano-structured films have been grown on quartz substrates using PLD technique. The deposited films were characterized by several structural techniques, including scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Selected-area electron diffraction patterns (SAED). The results prove the formation of cubic phase of PbS nanocrystals. Elemental analysis of the deposited films compared to the bulk target was obtained via laser induced fluorescence of the produced plasma particles and the energy dispersive X-ray "EDX" technique. The Hall coefficient measurements indicate an efficient performance of the deposited films as a magnetic sensor.

Long-term variations and trends in the polar E-region

NASA Astrophysics Data System (ADS)

Bjoland, L. M.; Ogawa, Y.; Hall, C.; Rietveld, M.; Løvhaug, U. P.; La Hoz, C.; Miyaoka, H.

2017-10-01

As the EISCAT UHF radar system in Northern Scandinavia started its operations in the early 1980s, the collected data cover about three solar cycles. These long time-series provide us the opportunity to study long-term variations and trends of ionospheric parameters in the high latitude region. In the present study we have used the EISCAT Tromsø UHF data to investigate variations of the Hall conductivity and ion temperatures in the E-region around noon. Both the ion temperature and the peak altitude of the Hall conductivity are confirmed to depend strongly on solar zenith angle. However, the dependence on solar activity seems to be weak. In order to search for trends in these parameters, the ion temperature and peak altitude of the Hall conductivity data were adjusted for their seasonal and solar cycle dependence. A very weak descent (∼0.2 km/ decade) was seen in the peak altitude of the Hall conductivity. The ion temperature at 110 km shows a cooling trend (∼10 K/ decade). However, other parameters than solar zenith angle and solar activity seem to affect the ion temperature at this altitude, and a better understanding of these parameters is necessary to derive a conclusive trend. In this paper, we discuss what may cause the characteristics of the variations in the electric conductivities and ion temperatures in the high latitude region.

Valley-polarized quantum transport generated by gauge fields in graphene

NASA Astrophysics Data System (ADS)

Settnes, Mikkel; Garcia, Jose H.; Roche, Stephan

2017-09-01

We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a {{e}2}/h Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.

Chirality-induced magnon transport in AA-stacked bilayer honeycomb chiral magnets.

PubMed

Owerre, S A

2016-11-30

In this Letter, we study the magnetic transport in AA-stacked bilayer honeycomb chiral magnets coupled either ferromagnetically or antiferromagnetically. For both couplings, we observe chirality-induced gaps, chiral protected edge states, magnon Hall and magnon spin Nernst effects of magnetic spin excitations. For ferromagnetically coupled layers, thermal Hall and spin Nernst conductivities do not change sign as function of magnetic field or temperature similar to single-layer honeycomb ferromagnetic insulator. In contrast, for antiferromagnetically coupled layers, we observe a sign change in the thermal Hall and spin Nernst conductivities as the magnetic field is reversed. We discuss possible experimental accessible honeycomb bilayer quantum materials in which these effects can be observed.

Magnetotransport of single crystalline YSb

DOE PAGES

Ghimire, N. J.; Botana, A. S.; Phelan, D.; ...

2016-05-10

Here, we report magnetic field dependent transport measurements on a single crystal of cubic YSb together with first principles calculations of its electronic structure. The transverse magnetoresistance does not saturate up to 9 T and attains a value of 75 000% at 1.8 K. The Hall coefficient is electron-like at high temperature, changes sign to hole-like between 110 and 50 K, and again becomes electron-like below 50 K. First principles calculations show that YSb is a compensated semimetal with a qualitatively similar electronic structure to that of isostructural LaSb and LaBi, but with larger Fermi surface volume. The measured electron carrier density and Hall mobility calculated at 1.8 K, based on a single band approximation, aremore » $$6.5\\times {{10}^{20}}$$ cm –3 and $$6.2\\times {{10}^{4}}$$ cm 2 Vs –1, respectively. These values are comparable with those reported for LaBi and LaSb. Like LaBi and LaSb, YSb undergoes a magnetic field-induced metal-insulator-like transition below a characteristic temperature T m, with resistivity saturation below 13 K. Thickness dependent electrical resistance measurements show a deviation of the resistance behavior from that expected for a normal metal; however, they do not unambiguously establish surface conduction as the mechanism for the resistivity plateau.« less

Redistributing Chern numbers and quantum Hall transitions in multi-band lattices

NASA Astrophysics Data System (ADS)

Yu, H. L.; Zhai, Z. Y.; Jiang, C.

2018-07-01

We numerically study the integer quantum Hall effect (IQHE) on m-band lattices. With continuous modulating the next-nearest-neighbor hopping integral t' , it is found that the full band is divided into 2 m - 1 regions. There are m - 1 critical regions with pseudogaps induced by the merging between the two adjacent subbands, where both Chern numbers of the correlating Landau subbands and the corresponding Hall plateau are not well-defined. The other m regions with different well-defined Chern numbers are separated by the above m - 1 critical regions. Due to the redistributing Chern numbers of system induced by the merging of subbands, the Hall conductance exhibits a peculiar phase transition, which is characterized by the direct change of Hall plateau state.

Throttling Impacts on Hall Thruster Performance, Erosion, and Qualification for NASA Science Missions

NASA Technical Reports Server (NTRS)

Dankanich, John W.; DeHoyos, Amado

2007-01-01

With the SMART-1, Department of Defense, and commercial industry successes in Hall thruster technologies, NASA has started considering Hall thrusters for science missions. The recent Discovery proposals included a Hall thruster science mission and the In-Space Propulsion Project is investing in Hall thruster technologies. As the confidence in Hall thrusters improve, ambitious multi-thruster missions are being considered. Science missions often require large throttling ranges due to the 1/r(sup 2) power drop-off from the sun. Deep throttling of Hall thrusters will impact the overall system performance. Also, Hall thrusters can be throttled with both current and voltage, impacting erosion rates and performance. Last, electric propulsion thruster lifetime qualification has previously been conducted with long duration full power tests. Full power tests may not be appropriate for NASA science missions, and a combination of lifetime testing at various power levels with sufficient analysis is recommended. Analyses of various science missions and throttling schemes using the Aerojet BPT-4000 and NASA 103M HiVHAC thruster are presented.

Tunable Intrinsic Spin Hall Conductivities in Bi2(Se,Te)3 Topological Insulators

NASA Astrophysics Data System (ADS)

Şahin, Cüneyt; Flatté, Michael E.

2015-03-01

It has been recently shown by spin-transfer torque measurements that Bi2Se3 exhibits a very large spin Hall conductivity (SHC). It is expected that Bi2Te3, a topological insulator with similar crystal and band structures as well as large spin-orbit coupling, would also exhibit a giant SHC. In this study we have calculated intrinsic spin Hall conductivities of Bi2Se3andBi2Te3 topological insulators from a tight-binding Hamiltonian including two nearest-neighbor interactions. We have calculated the Berry curvature, used the Kubo formula in the static, clean limit and shown that both materials exhibit giant spin Hall conductivities, consistent with the results of Ref. 1 and larger than previously reported Bi1-xSbx alloys. The density of Berry curvature has also been computed from the full Brillouin zone in order to compute the dependence of the SHC in these materials on the Fermi energy. Finally we report the intrinsic SHC for Bi2(Se,Te)3 topological insulators, which changes dramatically with doping or gate voltage. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

Giant Hall Photoconductivity in Narrow-Gapped Dirac Materials

NASA Astrophysics Data System (ADS)

Song, Justin C. W.; Kats, Mikhail A.

2016-12-01

Carrier dynamics acquire a new character in the presence of Bloch-band Berry curvature, which naturally arises in gapped Dirac materials (GDMs). Here we argue that photoresponse in GDMs with small band gaps is dramatically enhanced by Berry curvature. This manifests in a giant and saturable Hall photoconductivity when illuminated by circularly polarized light. Unlike Hall motion arising from a Lorentz force in a magnetic field, which impedes longitudinal carrier motion, Hall photoconductivity arising from Berry curvature can boost longitudinal carrier transport. In GDMs, this results in a helicity-dependent photoresponse in the Hall regime, where photoconductivity is dominated by its Hall component. We find that the induced Hall conductivity per incident irradiance is enhanced by up to six orders of magnitude when moving from the visible regime (with corresponding band gaps) to the far infrared. These results suggest that narrow-gap GDMs are an ideal test-bed for the unique physics that arise in the presence of Berry curvature, and open a new avenue for infrared and terahertz optoelectronics.

Crossover to the anomalous quantum regime in the extrinsic spin Hall effect of graphene

NASA Astrophysics Data System (ADS)

Ferreira, Aires; Milletari, Mirco

Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density dependence of the extrinsic spin Hall effect in spin-orbit coupled graphene. We present a nonperturbative quantum diagrammatic calculation of the spin Hall response function in the strong-coupling regime that incorporates skew scattering and anomalous impurity density-independent contributions on equal footing. The spin Hall conductivity dependence on Fermi energy and electron-impurity interaction strength reveals the existence of experimentally accessible regions where anomalous quantum processes dominate. Our findings suggest that spin-orbit-coupled graphene is an ideal model system for probing the competition between semiclassical and bona fide quantum scattering mechanisms underlying the spin Hall effect. A.F. gratefully acknowledges the financial support of the Royal Society (U.K.).

Magnetic and thermoelectric properties of the ternary pseudo-hollandite BaxCr5Se8 (0.5 < x < 0.55) solid solution.

PubMed

Lefèvre, Robin; Berthebaud, David; Bux, Sabah; Hébert, Sylvie; Gascoin, Franck

2016-07-26

The structure of Ba0.5Cr5Se8 has been recently resolved, and its thermoelectric and magnetic properties have been studied. A ZT of 0.12 was found at around 800 K. Here, we report a study on the pseudo-hollandite BaxCr5Se8 solid-solution with 0.5 ≤ x ≤ 0.55 and its thermoelectric and magnetic properties. There is no significant impact either on the cell parameters depending on the cation content or on the magnetic properties. However, thermoelectric properties are radically changed depending on x content. While the low thermal conductivity, around 0.8 W m(-1) K(-1), remains similar for all samples, a respective increase and decrease of the resistivity and the Seebeck coefficient are observed with increasing Ba content. The maximum Seebeck coefficient is found with Ba0.5Cr5Se8 at around 635 K with 315 μV K(-1), and the Seebeck coefficient then decreases and is correlated with an activation of minority charge carriers confirmed by Hall measurements. A similar but steeper behavior is observed for the Ba0.55Cr5Se8 temperature dependence plot at around 573 K. Finally, the best thermoelectric performances are found using the lowest content of Ba, unlike when x tends to 0.55, ZT approaches a tenth of the initial best value. BaxCr5Se8 compounds are antiferromagnetic with TN = 58 K. A large peak in thermal conductivity is observed around the antiferromagnetic transition for all stoichiometry.

High Temperature Electronic and Thermal Transport Properties of EuGa2- x In x Sb2

NASA Astrophysics Data System (ADS)

Chanakian, Sevan; Weber, Rochelle; Aydemir, Umut; Ormeci, Alim; Fleurial, Jean-Pierre; Bux, Sabah; Snyder, G. Jeffrey

2017-08-01

The Zintl phase EuGa2Sb2 was synthesized via ball milling followed by hot pressing. The crystal structure of EuGa2Sb2 is comprised of a 3-D network of polyanionic [Ga2Sb2]2- tunnels filled with Eu cations that provide charge balance (Eu2+[Ga2Sb2]2-). Here we report the temperature-dependent resistivity, Hall Effect, Seebeck coefficient and thermal conductivity for EuGa2- x In x Sb2 ( x = 0, 0.05, 0.1) from 300 K to 775 K. Experimental results demonstrate that the material is a p-type semiconductor. However, a small band gap (˜0.1 eV) prevents EuGa2Sb2 from having high zT at higher temperatures. Isoelectronic substitution of In on the Ga site leads to point defect scattering of holes and phonons, thus reducing thermal conductivity and resulting in a slight improvement in zT.

Suppression of the Hall number due to charge density wave order in high-Tc cuprates

NASA Astrophysics Data System (ADS)

Sharma, Girish; Nandy, S.; Taraphder, A.; Tewari, Sumanta

2018-05-01

Understanding the pseudogap phase in hole-doped high-temperature cuprate superconductors remains a central challenge in condensed-matter physics. From a host of recent experiments there is now compelling evidence of translational-symmetry-breaking charge density wave (CDW) order in a wide range of doping inside this phase. Two distinct types of incommensurate charge order, bidirectional at zero or low magnetic fields and unidirectional at high magnetic fields close to the upper critical field Hc 2, have been reported so far in approximately the same doping range between p ≃0.08 and p ≃0.16 . In concurrent developments, recent high-field Hall experiments have also revealed two indirect but striking signatures of Fermi surface reconstruction in the pseudogap phase, namely, a sign change of the Hall coefficient to negative values at low temperatures in the intermediate range of hole doping and a rapid suppression of the positive Hall number without a change in sign near optimal doping p ˜0.19 . We show that the assumption of a unidirectional incommensurate CDW (with or without a coexisting weak bidirectional order) at high magnetic fields near optimal doping and the coexistence of both types of orders of approximately equal magnitude at high magnetic fields in the intermediate range of doping may help explain the striking behavior of the low-temperature Hall effect in the entire pseudogap phase.

Substorm Birkeland currents and Cowling channels in the ionosphere

NASA Astrophysics Data System (ADS)

Fujii, R.

2016-12-01

Field-aligned current (FAC) connects electromagnetically the ionosphere with the magnetosphere and plays important roles on dynamics and energetics in the magnetosphere and the ionosphere. In particular, connections between FACs in the ionosphere give important information on various current sources in the magnetosphere and the linkage between them, although the connection between FACs in the ionosphere does not straightforwardly give that in the magnetosphere. FACs in the ionosphere are closed to each other through ionospheric currents determined with the electric field and the Hall and Pedersen conductivities. The electric field and the conductivities are not independently distributed, but rather they are harmonized with each other spatially and temporarily in a physically consistent manner to give a certain FAC. In particular, the divergence of the Hall current due to the inhomogeneity of the Hall conductivity either flows in/out to the magnetosphere as a secondary FAC or accumulates excess charges that produce a secondary electric field. This electric field drives a current circuit connecting the Hall current with the Pedersen current; a Cowling channel current circuit. The FAC (the electric field) we observe is the sum of the primary and secondary FACs (electric fields). The talk will present characteristics of FACs and associated electric field and auroras during substorms, and the ionospheric current closures between the FACs. A statistical study has shown that the majority of region 1 currents are connected to their adjacent region 2 or region 0 currents, indicating the Pedersen current closure rather than the Hall current closure is dominant. On the other hand, the Pedersen currents associated with surge and substorm-related auroras often are connected to the Hall currents, forming a Cowling channel current circuit within the ionosphere.

Optical and low-temperature thermoelectric properties of phase-pure p-type InSe thin films

NASA Astrophysics Data System (ADS)

Urmila, K. S.; Namitha, T. A.; Philip, R. R.; Pradeep, B.

2015-08-01

Polycrystalline phase-pure p-type InSe thin films were deposited on glass substrates by reactive evaporation at an optimized substrate temperature of 473 ± 5 K and pressure of 10-5 mbar. The as-prepared InSe thin films were analyzed by X-ray diffractometry, energy-dispersive X-ray spectroscopy, atomic force microscopy, UV-Vis-NIR spectroscopy, electrical conductivity and Hall measurements. The lattice parameters, particle size, dislocation density, number of crystallites per unit area and the lattice strain of the prepared InSe thin films were calculated and found as a = 4.00 ± 0.002 Å and c = 16.68 ± 0.002 Å, 48 ± 2 nm, 4.34 × 1010 lines cm-2, 15.37 × 1010 cm-2 and 1.8 × 10-3, respectively. The as-deposited InSe thin films showed a direct allowed transition with an optical band gap of 1.35 ± 0.02 eV and high absorption coefficient of about 105 cm-1. The oscillator energy ( E o) and dispersion energy ( E d) were calculated using the single-oscillator Wemple and DiDomenico model. The p-type conductivity and photosensitivity of the as-prepared InSe thin films confirmed their potential application in photovoltaic devices. The mean free path, relaxation time, density of states, Fermi energy and effective mass of holes in the film were determined by correlating the results of thermopower and Hall measurements. The sudden and sharp increase in thermopower from 80 to 37 K was explained as due to the effect of phonon drag on charge carriers.

Anomalous Hall effect in semiconductor quantum wells in proximity to chiral p -wave superconductors

NASA Astrophysics Data System (ADS)

Yang, F.; Yu, T.; Wu, M. W.

2018-05-01

By using the gauge-invariant optical Bloch equation, we perform a microscopic kinetic investigation on the anomalous Hall effect in chiral p -wave superconducting states. Specifically, the intrinsic anomalous Hall conductivity in the absence of the magnetic field is zero as a consequence of Galilean invariance in our description. As for the extrinsic channel, a finite anomalous Hall current is obtained from the impurity scattering with the optically excited normal quasiparticle current even at zero temperature. From our kinetic description, it can be clearly seen that the excited normal quasiparticle current is due to an induced center-of-mass momentum of Cooper pairs through the acceleration driven by ac electric field. For the induced anomalous Hall current, we show that the conventional skew-scattering channel in the linear response makes the dominant contribution in the strong impurity interaction. In this case, our kinetic description as a supplementary viewpoint mostly confirms the results of Kubo formalism in the literature. Nevertheless, in the weak impurity interaction, this skew-scattering channel becomes marginal and we reveal that an induction channel from the Born contribution dominates the anomalous Hall current. This channel, which has long been overlooked in the literature, is due to the particle-hole asymmetry by nonlinear optical excitation. Finally, we study the case in the chiral p -wave superconducting state with a transverse conical magnetization, which breaks the Galilean invariance. In this situation, the intrinsic anomalous Hall conductivity is no longer zero. Comparison of this intrinsic channel with the extrinsic one from impurity scattering is addressed.

Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge.

PubMed

Nayak, Ajaya K; Fischer, Julia Erika; Sun, Yan; Yan, Binghai; Karel, Julie; Komarek, Alexander C; Shekhar, Chandra; Kumar, Nitesh; Schnelle, Walter; Kübler, Jürgen; Felser, Claudia; Parkin, Stuart S P

2016-04-01

It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)(-1) at 2 K and ~50 (ohm·cm)(-1) at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)(-1), comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect-based data storage devices.

Quest for Casimir repulsion between Chern-Simons surfaces

NASA Astrophysics Data System (ADS)

Fialkovsky, Ignat; Khusnutdinov, Nail; Vassilevich, Dmitri

2018-04-01

In this paper we critically reconsider the Casimir repulsion between surfaces that carry the Chern-Simons interaction (corresponding to the Hall-type conductivity). We present a derivation of the Lifshitz formula valid for arbitrary planar geometries and discuss its properties. This analysis allows us to resolve some contradictions in the previous literature. We compute the Casimir energy for two surfaces that have constant longitudinal and Hall conductivities. The repulsion is possible only if both surfaces have Hall conductivities of the same sign. However, there is a critical value of the longitudinal conductivity above which the repulsion disappears. We also consider a model where both parity odd and parity even terms in the conductivity are produced by the polarization tensor of surface modes. In contrast to the previous publications [L. Chen and S.-L. Wan, Phys. Rev. B 84, 075149 (2011), 10.1103/PhysRevB.84.075149; Phys. Rev. B 85, 115102 (2012), 10.1103/PhysRevB.85.115102], we include the parity anomaly term. This term ensures that the conductivities vanish for infinitely massive surface modes. We find that at least for a single mode, regardless of the sign and value of its mass, there is no Casimir repulsion.

Composition- and crystallinity-dependent thermoelectric properties of ternary BixSb2-xTey films

NASA Astrophysics Data System (ADS)

Kim, Jiwon; Lim, Jae-Hong; Myung, Nosang V.

2018-01-01

BixSb2-xTey films with controlled compositions were synthesized by a simple and cost-effective electrodeposition technique followed by post-annealing, for thermoelectric applications. Tailoring the chemical composition of ternary BixSb2-xTey materials is critical to adjust the carrier concentration and carrier type, which are crucial to determine their thermoelectric performance. Herein, the composition of electrodeposited BixSb2-xTey film was simply tailored by controlling the [Sb]/[Bi] ratio in the electrolytes while maintaining their dense and uniform morphology. Crystallographic properties of the BixSb2-xTey films, such as crystallinity and grain size changes, were confirmed by X-ray diffraction. Room-temperature measurements of electrical conductivity, Hall mobility, and carrier concentration revealed that the substitution of Bi with Sb decreased the carrier concentration, and increased the mobility. The Seebeck coefficient of the ternary BixSb2-xTey films transitioned between p- and n-type characteristics with an increase in the Bi content. Moreover, the mobility-dependent electrical conductivity of the Bi10Sb30Te60 film resulted in a high Seebeck coefficient owing to decreased carrier concentration of the film, leading to a power factor (PF) of ∼490 μW/m K2. This is more than 10 times higher than the PF values of binary nanocrystalline Sb2Te3 films.

Calculated organ doses for Mayak production association central hall using ICRP and MCNP.

PubMed

Choe, Dong-Ok; Shelkey, Brenda N; Wilde, Justin L; Walk, Heidi A; Slaughter, David M

2003-03-01

As part of an ongoing dose reconstruction project, equivalent organ dose rates from photons and neutrons were estimated using the energy spectra measured in the central hall above the graphite reactor core located in the Russian Mayak Production Association facility. Reconstruction of the work environment was necessary due to the lack of personal dosimeter data for neutrons in the time period prior to 1987. A typical worker scenario for the central hall was developed for the Monte Carlo Neutron Photon-4B (MCNP) code. The resultant equivalent dose rates for neutrons and photons were compared with the equivalent dose rates derived from calculations using the conversion coefficients in the International Commission on Radiological Protection Publications 51 and 74 in order to validate the model scenario for this Russian facility. The MCNP results were in good agreement with the results of the ICRP publications indicating the modeling scenario was consistent with actual work conditions given the spectra provided. The MCNP code will allow for additional orientations to accurately reflect source locations.

Longitudinal Characteristics and Aileron Effectiveness of a Midwing Airplane from High-Speed Wind-Tunnel Tests

DTIC Science & Technology

1944-09-01

undesirable control cho.r~cteristics caused by the decrease in the elcvator- f’Lxcd pitehinc-moi’aent coefficient (fiZ. 12.(8.)). The effect of the t~b on...LONGITUDINAL CHARACTERISTICS AND AILERON EFFECTIVENESS OF A MIDWING AIRPLANE FROM ffiGH-SPEED WIND-TUNNEL TESTS By Charles F. Hall and Robert L. Mannes Ames...thG o.i Lcr-on effectiveness a t bieh Hc.ch numbers. Tho forco and Gamont coefficients computod fro~ the tost data nrc prcsontcd in this ro)ort. The

The effects of temperature dependent recombination rates on performance of InGaN/GaN blue superluminescent light emitting diodes

NASA Astrophysics Data System (ADS)

Moslehi Milani, N.; Mohadesi, V.; Asgari, A.

2015-07-01

The effects of temperature dependent radiative and nonradiative recombination (Shockley-Read-Hall, spontaneous radiative, and Auger coefficients) on the spectral and power characteristics of a blue multiple quantum well (MQW) superluminescent light emitting diode (SLD or SLED) have been studied. The study is based on the rate equations model, where three rate equations corresponding to MQW active region, separate confinement heterostructure (SCH) layer, and spectral density of optical power are solved self-consistently with no k-selection energy dependent gain and quasi-Fermi level functions at steady state. We have taken into account the temperature effects on Shockley-Read-Hall (SRH), spontaneous radiative, and Auger recombination in the rate equations and have investigated the effects of temperature rising from 300 K to 375 K at a fixed current density. We examine this procedure for a moderate current density and interpret the spectral radiation power and light output power diagrams. The investigation reveals that the main loss due to temperature is related to Auger coefficient.

Combined Influence of Hall Current and Soret Effect on Chemically Reacting Magnetomicropolar Fluid Flow from Radiative Rotating Vertical Surface with Variable Suction in Slip-Flow Regime

PubMed Central

Jain, Preeti

2014-01-01

An analysis study is presented to study the effects of Hall current and Soret effect on unsteady hydromagnetic natural convection of a micropolar fluid in a rotating frame of reference with slip-flow regime. A uniform magnetic field acts perpendicularly to the porous surface which absorbs the micropolar fluid with variable suction velocity. The effects of heat absorption, chemical reaction, and thermal radiation are discussed and for this Rosseland approximation is used to describe the radiative heat flux in energy equation. The entire system rotates with uniform angular velocity Ω about an axis normal to the plate. The nonlinear coupled partial differential equations are solved by perturbation techniques. In order to get physical insight, the numerical results of translational velocity, microrotation, fluid temperature, and species concentration for different physical parameters entering into the analysis are discussed and explained graphically. Also, the results of the skin-friction coefficient, the couple stress coefficient, Nusselt number, and Sherwood number are discussed with the help of figures for various values of flow pertinent flow parameters. PMID:27350957

Anomalous cross-B field transport and spokes in HiPIMS plasma

NASA Astrophysics Data System (ADS)

Hecimovic, Ante; Maszl, Christian; Schulz-von der Gathen, Volker; von Keudell, Achim

2016-09-01

The rotation of localised ionisation zones, i.e. spokes, in magnetron discharge is investigated as a function of discharge current, ranging from 10 mA (current density 0.5 mA cm-2) to 140 A (7 A cm-2) . The presence of spokes throughout the complete discharge current range indicates that the spokes are an intrinsic property of a magnetron sputtering plasma discharge. Up to discharge currents of several amperes, the spokes rotate in a retrograde ExB direction and beyond the spokes rotate in a ExB direction. In this contribution we present experimental evidence that anomalous diffusion is triggered by the appearance of spokes rotating in the ExB direction. The Hall parameter ωceτc , product of the electron cyclotron frequency and the classical collision time, reduces from Bohm diffusion values (16 and higher) down to the value of 3 as spokes appear, indicating anomalous cross-B field transport. The ion diffusion coefficients calculated from a sideways image of the spoke is six times higher than Bohm diffusion coefficients, which is consistent with the reduction of the Hall parameter.

Quantum Hall effect in graphene with interface-induced spin-orbit coupling

NASA Astrophysics Data System (ADS)

Cysne, Tarik P.; Garcia, Jose H.; Rocha, Alexandre R.; Rappoport, Tatiana G.

2018-02-01

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

Experimental transport studies of yttrium barium copper oxide and lambda-DNA

NASA Astrophysics Data System (ADS)

Zhang, Yuexing

This dissertation consists of two parts. In Part I, we focus on the quasi-particle transport properties in the high temperature superconductor YBa2Cu3O7-delta (YBCO), probed by the thermal Hall conductivity (kappa xy). The thermal Hall conductivity selectively reflects the transport behaviors of the charge carriers. By measuring kappaxy in the normal state YBCO, we established a new method to determine the Wiedemann-Franz (WF) ratio in cuprates. We determined the Hall-channel WF ratio kappa xy/sigmaxyT in Cu and YBCO. In the latter, we uncovered a T-linear dependence and suppression of the Hallchannel WF ratio. The suppression of the Hall-channel WF ratio in systems with predominant electron-electron scattering will be discussed. Thermal transport behaviors of the quasi-particles in the mixed state were studied by measuring kappaxx and kappa xy in a high-purity YBCO crystal. From the field-dependence of the thermal conductivity kappaxx, we separated the quasi particle contribution (kappae) from the phonon background. In the Hall channel, we observed that the (weak-field) kappa xy increased 103-fold between T c (90 K) and 30 K, implying a 100-fold enhancement of the quasi-particle lifetime. We found that kappaxy exhibited a specific scaling behavior below ˜30 K. The implication of the scaling behavior will be discussed. In Part II, we describe an experiment on determining the electrical conductivity of the bacteriophage lambda-DNA, an issue currently under intense debate. We covalently bonded the DNA to Au electrodes by incorporating thiol modified dTTP into the 'sticky' ends of the lambda-DNA. Two-probe measurements on such molecules provided a lower bound for the resistivity rho > 10 6 mum at bias potentials up to 20 V, in conflict with recent claims of moderate to high conductivity. We stress the importance of eliminating salt residues in these measurements.

Distribution of Chern number by Landau level broadening in Hofstadter butterfly

NASA Astrophysics Data System (ADS)

Yoshioka, Nobuyuki; Matsuura, Hiroyasu; Ogata, Masao

2015-04-01

We discuss the relationship between the quantum Hall conductance and a fractal energy band structure, Hofstadter butterfly, on a square lattice under a magnetic field. At first, we calculate the Hall conductance of Hofstadter butterfly on the basis of the linear responce theory. By classifying the bands into some groups with a help of continued fraction expansion, we find that the conductance at the band gaps between the groups accord with the denominators of fractions obtained by aborting the expansion halfway. The broadening of Landau levels is given as an account of this correspondance.

Framing anomaly in the effective theory of the fractional quantum Hall effect.

PubMed

Gromov, Andrey; Cho, Gil Young; You, Yizhi; Abanov, Alexander G; Fradkin, Eduardo

2015-01-09

We consider the geometric part of the effective action for the fractional quantum Hall effect (FQHE). It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions. In the lowest order in gradients, the linear response generating functional includes Chern-Simons, Wen-Zee, and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and contributes to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses for non-Abelian FQH states.

Anomalous Hall effect in epitaxial permalloy thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y. Q.; Sun, N. Y.; Shan, R.

2013-10-28

Anomalous Hall effect (AHE) of epitaxial permalloy thin films grown on MgO (001) substrates is investigated. The longitudinal conductivity independent term (i.e., the sum of intrinsic and side-jump contributions) of the anomalous Hall conductivity (AHC) is found to be much smaller than those of Fe and Ni films. Band theoretical calculations of the intrinsic AHC as a function of the number of valence electrons (band filling) indicate that the AHC of the permalloy is in the vicinity of sign change, thus resulting in the smallness of the intrinsic AHC. The contribution of the phonon scattering is found to be comparablemore » to that of the impurity scattering. This work suggests that the permalloy films are ideal systems to understand the AHE mechanisms induced by impurity scattering.« less

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Wang, Ke; Harzheim, Achim; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip

In the quantum Hall (QH) regime, ballistic conducting paths along the physical edges of a sample appear, leading to quantized Hall conductance and vanishing longitudinal magnetoconductance. These QH edge states are often described as ballistic compressible strips separated by insulating incompressible strips, the spatial profiles of which can be crucial in understanding the stability and emergence of interaction driven QH states. In this work, we present tunneling transport between two QH edge states in bilayer graphene. Employing locally gated device structure, we guide and control the separation between the QH edge states in bilayer graphene. Using resonant Landau level tunneling as a spectroscopy tool, we measure the energy gap in bilayer graphene as a function of displacement field and probe the emergence and evolution of incompressible strips.

Theoretical study of the zero-gap organic conductor α-(BEDT-TTF)2I3

PubMed Central

Kobayashi, Akito; Katayama, Shinya; Suzumura, Yoshikazu

2009-01-01

The quasi-two-dimensional molecular conductor α-(BEDT-TTF)2I3 exhibits anomalous transport phenomena where the temperature dependence of resistivity is weak but the ratio of the Hall coefficient at 10 K to that at room temperature is of the order of 104. These puzzling phenomena were solved by predicting massless Dirac fermions, whose motions are described using the tilted Weyl equation with anisotropic velocity. α-(BEDT-TTF)2I3 is a unique material among several materials with Dirac fermions, i.e. graphene, bismuth, and quantum wells such as HgTe, from the view-points of both the structure and electronic states described as follows. α-(BEDT-TTF)2I3 has the layered structure with highly two-dimensional massless Dirac fermions. The anisotropic velocity and incommensurate momenta of the contact points, ±k0, originate from the inequivalency of the BEDT-TTF sites in the unit cell, where ±k0 moves in the first Brillouin zone with increasing pressure. The massless Dirac fermions exist in the presence of the charge disproportionation and are robust against the increase in pressure. The electron densities on those inequivalent BEDT-TTF sites exhibit anomalous momentum distributions, reflecting the angular dependences of the wave functions around the contact points. Those unique electronic properties affect the spatial oscillations of the electron densities in the vicinity of an impurity. A marked behavior of the Hall coefficient, where the sign of the Hall coefficient reverses sharply but continuously at low temperatures around 5 K, is investigated by treating the interband effects of the magnetic field exactly. It is shown that such behavior is possible by assuming the existence of the extremely small amount of electron doping. The enhancement of the orbital diamagnetism is also expected. The results of the present research shed light on a new aspect of Dirac fermion physics, i.e. the emergence of unique electronic properties owing to the structure of the material. PMID:27877282

Disorder effects in the quantum Hall effect of graphene p-n junctions

NASA Astrophysics Data System (ADS)

Li, Jian; Shen, Shun-Qing

2008-11-01

The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.

Estimating the spin diffusion length and the spin Hall angle from spin pumping induced inverse spin Hall voltages

NASA Astrophysics Data System (ADS)

Roy, Kuntal

2017-11-01

There exists considerable confusion in estimating the spin diffusion length of materials with high spin-orbit coupling from spin pumping experiments. For designing functional devices, it is important to determine the spin diffusion length with sufficient accuracy from experimental results. An inaccurate estimation of spin diffusion length also affects the estimation of other parameters (e.g., spin mixing conductance, spin Hall angle) concomitantly. The spin diffusion length for platinum (Pt) has been reported in the literature in a wide range of 0.5-14 nm, and in particular it is a constant value independent of Pt's thickness. Here, the key reasonings behind such a wide range of reported values of spin diffusion length have been identified comprehensively. In particular, it is shown here that a thickness-dependent conductivity and spin diffusion length is necessary to simultaneously match the experimental results of effective spin mixing conductance and inverse spin Hall voltage due to spin pumping. Such a thickness-dependent spin diffusion length is tantamount to the Elliott-Yafet spin relaxation mechanism, which bodes well for transitional metals. This conclusion is not altered even when there is significant interfacial spin memory loss. Furthermore, the variations in the estimated parameters are also studied, which is important for technological applications.

RHETT2/EPDM Hall Thruster Propulsion System Electromagnetic Compatibility Evaluation

NASA Technical Reports Server (NTRS)

Sarmiento, Charles J.; Sankovic, John M.; Freitas, Joseph; Lynn, Peter R.

1997-01-01

Electromagnetic compatibility measurements were obtained as part of the Electric Propulsion Demonstration Module (EPDM) flight qualification program. Tests were conducted on a Hall thruster system operating at a nominal 66O W discharge power. Measurements of conducted and radiated susceptibility and emissions were obtained and referenced to MEL-STD-461 C. The power processor showed some conducted susceptibility below 4 kHz for the magnet current and discharge voltage. Radiated susceptibility testing yielded a null result. Conducted emissions showed slight violations of the specified limit for MIL-461C CE03. Radiated emissions exceeded the RE02 standard at low frequencies, below 300 MHz, by up to 40 dB RV/m/MHz.

General response formula and application to topological insulator in quantum open system.

PubMed

Shen, H Z; Qin, M; Shao, X Q; Yi, X X

2015-11-01

It is well-known that the quantum linear response theory is based on the first-order perturbation theory for a system in thermal equilibrium. Hence, this theory breaks down when the system is in a steady state far from thermal equilibrium and the response up to higher order in perturbation is not negligible. In this paper, we develop a nonlinear response theory for such quantum open system. We first formulate this theory in terms of general susceptibility, after which we apply it to the derivation of Hall conductance for open system at finite temperature. As an example, the Hall conductance of the two-band model is derived. Then we calculate the Hall conductance for a two-dimensional ferromagnetic electron gas and a two-dimensional lattice model. The calculations show that the transition points of topological phase are robust against the environment. Our results provide a promising platform for the coherent manipulation of the nonlinear response in quantum open system, which has potential applications for quantum information processing and statistical physics.

Contactless measurement of alternating current conductance in quantum Hall structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drichko, I. L.; Diakonov, A. M.; Malysh, V. A.

2014-10-21

We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods—acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use themore » fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized p-SiGe/Ge/SiGe heterostructure.« less

A holographic model for the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Lippert, Matthew; Meyer, René; Taliotis, Anastasios

2015-01-01

Experimental data for fractional quantum Hall systems can to a large extent be explained by assuming the existence of a Γ0(2) modular symmetry group commuting with the renormalization group flow and hence mapping different phases of two-dimensional electron gases into each other. Based on this insight, we construct a phenomenological holographic model which captures many features of the fractional quantum Hall effect. Using an -invariant Einstein-Maxwell-axio-dilaton theory capturing the important modular transformation properties of quantum Hall physics, we find dyonic diatonic black hole solutions which are gapped and have a Hall conductivity equal to the filling fraction, as expected for quantum Hall states. We also provide several technical results on the general behavior of the gauge field fluctuations around these dyonic dilatonic black hole solutions: we specify a sufficient criterion for IR normalizability of the fluctuations, demonstrate the preservation of the gap under the action, and prove that the singularity of the fluctuation problem in the presence of a magnetic field is an accessory singularity. We finish with a preliminary investigation of the possible IR scaling solutions of our model and some speculations on how they could be important for the observed universality of quantum Hall transitions.

Observation of a superfluid Hall effect

PubMed Central

Jiménez-García, Karina; Williams, Ross A.; Beeler, Matthew C.; Perry, Abigail R.; Phillips, William D.; Spielman, Ian B.

2012-01-01

Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)—internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect’s sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose–Einstein condensate’s transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system’s global irrotationality influences this superfluid Hall signal. PMID:22699494

Seasonal variation of the underground cosmic muon flux observed at Daya Bay

NASA Astrophysics Data System (ADS)

An, F. P.; Balantekin, A. B.; Band, H. R.; Bishai, M.; Blyth, S.; Cao, D.; Cao, G. F.; Cao, J.; Chan, Y. L.; Chang, J. F.; Chang, Y.; Chen, H. S.; Chen, Q. Y.; Chen, S. M.; Chen, Y. X.; Chen, Y.; Cheng, J.; Cheng, Z. K.; Cherwinka, J. J.; Chu, M. C.; Chukanov, A.; Cummings, J. P.; Ding, Y. Y.; Diwan, M. V.; Dolgareva, M.; Dove, J.; Dwyer, D. A.; Edwards, W. R.; Gill, R.; Gonchar, M.; Gong, G. H.; Gong, H.; Grassi, M.; Gu, W. Q.; Guo, L.; Guo, X. H.; Guo, Y. H.; Guo, Z.; Hackenburg, R. W.; Hans, S.; He, M.; Heeger, K. M.; Heng, Y. K.; Higuera, A.; Hsiung, Y. B.; Hu, B. Z.; Hu, T.; Huang, E. C.; Huang, H. X.; Huang, X. T.; Huber, P.; Huo, W.; Hussain, G.; Jaffe, D. E.; Jen, K. L.; Jetter, S.; Ji, X. P.; Ji, X. L.; Jiao, J. B.; Johnson, R. A.; Jones, D.; Kang, L.; Kettell, S. H.; Khan, A.; Kohn, S.; Kramer, M.; Kwan, K. K.; Kwok, M. W.; Kwok, T.; Langford, T. J.; Lau, K.; Lebanowski, L.; Lee, J.; Lee, J. H. C.; Lei, R. T.; Leitner, R.; Li, C.; Li, D. J.; Li, F.; Li, G. S.; Li, Q. J.; Li, S.; Li, S. C.; Li, W. D.; Li, X. N.; Li, X. Q.; Li, Y. F.; Li, Z. B.; Liang, H.; Lin, C. J.; Lin, G. L.; Lin, S.; Lin, S. K.; Lin, Y.-C.; Ling, J. J.; Link, J. M.; Littenberg, L.; Littlejohn, B. R.; Liu, J. L.; Liu, J. C.; Loh, C. W.; Lu, C.; Lu, H. Q.; Lu, J. S.; Luk, K. B.; Ma, X. Y.; Ma, X. B.; Ma, Y. Q.; Malyshkin, Y.; Martinez Caicedo, D. A.; McDonald, K. T.; McKeown, R. D.; Mitchell, I.; Nakajima, Y.; Napolitano, J.; Naumov, D.; Naumova, E.; Ngai, H. Y.; Ochoa-Ricoux, J. P.; Olshevskiy, A.; Pan, H.-R.; Park, J.; Patton, S.; Pec, V.; Peng, J. C.; Pinsky, L.; Pun, C. S. J.; Qi, F. Z.; Qi, M.; Qian, X.; Qiu, R. M.; Raper, N.; Ren, J.; Rosero, R.; Roskovec, B.; Ruan, X. C.; Sebastiani, C.; Steiner, H.; Sun, J. L.; Tang, W.; Taychenachev, D.; Treskov, K.; Tsang, K. V.; Tull, C. E.; Viaux, N.; Viren, B.; Vorobel, V.; Wang, C. H.; Wang, M.; Wang, N. Y.; Wang, R. G.; Wang, W.; Wang, X.; Wang, Y. F.; Wang, Z.; Wang, Z.; Wang, Z. M.; Wei, H. Y.; Wen, L. J.; Whisnant, K.; White, C. G.; Whitehead, L.; Wise, T.; Wong, H. L. H.; Wong, S. C. F.; Worcester, E.; Wu, C.-H.; Wu, Q.; Wu, W. J.; Xia, D. M.; Xia, J. K.; Xing, Z. Z.; Xu, J. L.; Xu, Y.; Xue, T.; Yang, C. G.; Yang, H.; Yang, L.; Yang, M. S.; Yang, M. T.; Yang, Y. Z.; Ye, M.; Ye, Z.; Yeh, M.; Young, B. L.; Yu, Z. Y.; Zeng, S.; Zhan, L.; Zhang, C.; Zhang, C. C.; Zhang, H. H.; Zhang, J. W.; Zhang, Q. M.; Zhang, X. T.; Zhang, Y. M.; Zhang, Y. X.; Zhang, Y. M.; Zhang, Z. J.; Zhang, Z. Y.; Zhang, Z. P.; Zhao, J.; Zhou, L.; Zhuang, H. L.; Zou, J. H.

2018-01-01

The Daya Bay Experiment consists of eight identically designed detectors located in three underground experimental halls named as EH1, EH2, EH3, with 250, 265 and 860 meters of water equivalent vertical overburden, respectively. Cosmic muon events have been recorded over a two-year period. The underground muon rate is observed to be positively correlated with the effective atmospheric temperature and to follow a seasonal modulation pattern. The correlation coefficient α, describing how a variation in the muon rate relates to a variation in the effective atmospheric temperature, is found to be αEH1 = 0.362±0.031, αEH2 = 0.433±0.038 and αEH3 = 0.641±0.057 for each experimental hall.

Spin-pumping and spin-Hall magnetoresistance (SMR) at transition metal interfaces: case of (Co/Pt) (Conference Presentation)

NASA Astrophysics Data System (ADS)

Jaffres, Henri; George, Jean-Marie; Laczowski, Piotr; Reyren, Nicolas; Vila, Laurent

2016-10-01

Spintronic phenomena are made possible via the diffusion of spin-currents or the generation of spin-accumulation. Spinorbitronics uses the electronic spin-orbit coupling (SOC) and emerges as a new route to create spin-currents in the transverse direction of the charge flow. This is made possible via the intrinsic spin Hall conduction (SHE) of heavy metals or extrinsic spin-Hall effect of metallic alloys. SHE borrows its concept from the anomalous Hall effect (AHE) where the relativistic spin-orbit coupling (SOC) promotes an asymmetric deflection of the spin-current. SHE is now at the base of magnetization commutation and domain wall moving via spin-orbit torque (SOT) and spin-transfer torque operations in the FMR regime. However, the exact anatomy of SOT at spin-orbit active interfaces like Co/Pt is still missing. In the case of Pt, recent studies have put forward the major role played by i) the spin-memory loss (SML) and the electronic transparency at 3d/5d interfaces and ii) the inhomogeneity of the conductivity in the current-in-plane (CIP) geometry to explain the discrepancy in the SHE. Ingredients to consider then are the profiles of both the conductivity and spin-current across the multilayers and spin-transmission. In this talk, we will present robust SMR measurements observed on NiCo/Pt multilayer stacks characterized by a perpendicular magnetic anisotropy (PMA). The SMR occurs for both in-plane magnetization rotation or from nominal out-of-plane to the in-plane direction transverse to the current flow. This clearly departs from standard AMR or pure interfacial anisotropic-AMR symmetries. We analyze in large details our SMR signals for the whole series of samples owing to two main guidelines: i) we consider the exact conductivity profile across the multilayers, in particular near the Co/Pt interface, via the Camley-Barnas approach and ii) we derive the spin current profile generated by SHE along the perpendicular direction responsible for SMR. We consider pure interfacial spin dissipation by SML (decoherence, interfacial enhanced scattering) and give out a general analytical expression for SMR. Our conclusions go towards a robust value of the spin-Hall conductivity and SML like previously published. The CIP spin-Hall angle, of the order of 0.10 is larger than the one found in spin-pumping experiments (CPP geometry) owing to the smaller conductivity at the Co/Pt interface, in agreement with the results of STT-FMR experiments.

Influence of Triply-Charged Ions and Ionization Cross-Sections in a Hybrid-PIC Model of a Hall Thruster Discharge

NASA Technical Reports Server (NTRS)

Smith, Brandon D.; Boyd, Iain D.; Kamhawi, Hani

2014-01-01

The sensitivity of xenon ionization rates to collision cross-sections is studied within the framework of a hybrid-PIC model of a Hall thruster discharge. A revised curve fit based on the Drawin form is proposed and is shown to better reproduce the measured crosssections at high electron energies, with differences in the integrated rate coefficients being on the order of 10% for electron temperatures between 20 eV and 30 eV. The revised fit is implemented into HPHall and the updated model is used to simulate NASA's HiVHAc EDU2 Hall thruster at discharge voltages of 300, 400, and 500 V. For all three operating points, the revised cross-sections result in an increase in the predicted thrust and anode efficiency, reducing the error relative to experimental performance measurements. Electron temperature and ionization reaction rates are shown to follow the trends expected based on the integrated rate coefficients. The effects of triply-charged xenon are also assessed. The predicted thruster performance is found to have little or no dependence on the presence of triply-charged ions. The fraction of ion current carried by triply-charged ions is found to be on the order of 1% and increases slightly with increasing discharge voltage. The reaction rates for the 0?III, I?III, and II?III ionization reactions are found to be of similar order of magnitude and are about one order of magnitude smaller than the rate of 0?II ionization in the discharge channel.

Fractional Quantum Hall Effect in Infinite-Layer Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naud, J. D.; Pryadko, Leonid P.; Sondhi, S. L.

2000-12-18

Stacked two dimensional electron systems in transverse magnetic fields exhibit three dimensional fractional quantum Hall phases. We analyze the simplest such phases and find novel bulk properties, e.g., irrational braiding. These phases host ''one and a half'' dimensional surface phases in which motion in one direction is chiral. We offer a general analysis of conduction in the latter by combining sum rule and renormalization group arguments, and find that when interlayer tunneling is marginal or irrelevant they are chiral semimetals that conduct only at T>0 or with disorder.

A Survey of Undergraduate Student Perceptions and Use of Nutrition Information Labels in a University Dining Hall

ERIC Educational Resources Information Center

Martinez, Olivia D.; Roberto, Christina A.; Kim, Jane H.; Schwartz, Marlene B.; Brownell, Kelly D.

2013-01-01

Objective: To examine undergraduate student perceptions and reported use of nutrition information labels in campus dining halls.Design: Paper surveys were administered to a convenience sample of undergraduates. Setting: This study was conducted at an urban United States university. Method: A survey about perceptions and use of nutrition…

High-Temperature Hall-Effect Apparatus

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, R. A.; Chemielewski, A. B.; Parker, J. B.; Zoltan, A.

1985-01-01

Compact furnace minimizes thermal gradients and electrical noise. Semiautomatic Hall-effect apparatus takes measurements on refractory semiconductors at temperatures as high as 1,100 degrees C. Intended especially for use with samples of high conductivity and low chargecarrier mobility that exhibit low signal-to-noise ratios, apparatus carefully constructed to avoid spurious electromagnetic and thermoelectric effects that further degrade measurements.

Thermoelectric properties of Ge 1-xSn xTe crystals grown by vertical Bridgman method

NASA Astrophysics Data System (ADS)

Wu, C. C.; Ferng, N. J.; Gau, H. J.

2007-06-01

Single crystals of Ge 1-xSn xTe compounds with x=0, 0.8, 0.9 and 1.0 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, metallographic microscope as well as electron-probe microanalysis (EPMA). Electrical property of the as-grown samples was characterized using room temperature resistivity and Hall measurements. The thermoelectric behaviors for the Ge 1-xSn xTe crystals were studied by means of thermal and carrier transport measurements. Temperature dependences of resistivity, Seebeck coefficient and thermal conductivity for the various compositions of Ge 1-xSn xTe were analyzed. A two-valence band model was proposed to describe the temperature dependence of thermoelectric property of the Ge 1-xSn xTe crystals. The dimensionless thermoelectric figure of merit ZT for the alloys was evaluated and discussed.

Electrical properties of polycrystalline GaN films functionalized with cysteine and stabilization of GaN nanoparticles in aqueous media.

PubMed

Arízaga, Gregorio Guadalupe Carbajal; Oviedo, Mariana J; López, Oscar Edel Contreras

2012-10-01

GaN was synthesized onto sapphire substrates by chemical vapor deposition, reacting gallium, ammonium chloride and ammonia. The polycrystalline films were immersed in glycine, aspartic acid and cysteine solutions. Cysteine chemisorbed onto GaN films produced detectable changes in conductivity, mobility and Hall coefficient indicating that GaN is capable of detecting and reacting with thiolate groups, which was confirmed by X-ray photoelectron spectroscopy. The Cys-GaN film solution was adjusted to pH 10, upon which the GaN nanoparticles were transferred to the aqueous phase forming a suspension stable for seven days. The alkaline colloid was then further adjusted down to pH 3 retaining stability for three days. The GaN colloid obtained represents a suitable medium to study GaN properties for biological applications. Copyright © 2012 Elsevier B.V. All rights reserved.

Low temperature thermoelectric properties of Bi2-xSbxTeSe2 crystals near the n-p crossover

NASA Astrophysics Data System (ADS)

Fuccillo, M. K.; Charles, M. E.; Hor, Y. S.; Jia, Shuang; Cava, R. J.

2012-07-01

Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi2-xSbxTeSe2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.

Thermoelectric properties of Bi1-xSnxCuSeO solid solutions.

PubMed

Yang, Yuqing; Liu, Xiaocun; Liang, Xin

2017-02-21

We report the enhanced thermoelectric properties of p-type BiCuSeO by tin doping on bismuth sites. Powder X-ray diffraction analysis and Hall measurements indicated effective tin doping in all samples. We found that the doping efficiency of Sn is lower than expected, as seen from the measured carrier concentration. First-principles calculations indicate that the Sn lone pair modifies the band structure at the Fermi level, with the consequent effect observed in the electrical transport and Seebeck coefficient measurements. An enhanced thermoelectric power factor of ∼2.5 μW cm -1 K -2 was reached at 773 K. No significant effect of Sn doping on the thermal conductivity was found; a thermoelectric figure of merit value (ZT) of 0.3 at 773 K is achieved for Bi 0.9 Sn 0.1 CuSeO, which is more than twice that of the pristine BiCuSeO.

Valley-isospin dependence of the quantum Hall effect in a graphene p-n junction

NASA Astrophysics Data System (ADS)

Tworzydło, J.; Snyman, I.; Akhmerov, A. R.; Beenakker, C. W. J.

2007-07-01

We calculate the conductance G of a bipolar junction in a graphene nanoribbon, in the high-magnetic-field regime where the Hall conductance in the p -doped and n -doped regions is 2e2/h . In the absence of intervalley scattering, the result G=(e2/h)(1-cosΦ) depends only on the angle Φ between the valley isospins ( =Bloch vectors representing the spinor of the valley polarization) at the two opposite edges. This plateau in the conductance versus Fermi energy is insensitive to electrostatic disorder, while it is destabilized by the dispersionless edge state which may exist at a zigzag boundary. A strain-induced vector potential shifts the conductance plateau up or down by rotating the valley isospin.

Low-temperature conducting state in two candidate topological Kondo insulators: SmB 6 and Ce 3 Bi 4 Pt 3

DOE PAGES

Wakeham, N.; Rosa, P. F. S.; Wang, Y. Q.; ...

2016-07-12

We have investigated the low temperature conducting state of two Kondo insulators, SmB 6 and Ce 3Bi 4Pt 3, which have been theoretically predicted to host topological surface states. Through comparison of the speci c heat of as-grown and powdered single crystals of SmB 6, we show that the residual term that is linear in temperature is not dominated by any surface state contribution, but rather is a bulk property. In Ce 3Bi 4Pt 3, we find that the Hall coefficient is independent of sample thickness, which indicates that conduction at low temperatures is dominated by the bulk of themore » sample, and not by a surface state. The low temperature resistivity of Ce 3Bi 4Pt 3 is found to monotonically decrease with low concentrations of disorder introduced through ion-irradiation. This is in contrast to SmB 6, which is again indicative of the contrasting origins of the low temperature conduction. In SmB 6, we also show that the effect of low concentrations of irradiation damage of the surface with Fe + ions is qualitatively consistent with damage with non-magnetic ions.« less

Properties of transparent conducting tin monoxide(SnO) thin films prepared by chemical spray pyrolysis method

NASA Astrophysics Data System (ADS)

Eqbal, Ebitha; Anila, E. I.

2018-01-01

Transparent conducting Stannous Oxide (SnO) thin films were obtained by chemical spray pyrolysis method on glass substrates for 0.1 M and 0.25 M concentration of precursor solutions. Their structural, morphological, optical and electrical properties were investigated. X-ray diffraction (XRD) study shows polycrystalline nature of the films with orthorhombic crystal structure. The morphological analysis was carried out by Scanning electron microscopy (SEM) and elemental analysis was done by Energy dispersive X-ray spectroscopy (EDX). The band gap of 0.1 M and 0.25 M thin film samples were found to be 3.58eV with 82% transmission and 3 eV with 30% transmission respectively. The film thickness, refractive index (n) and extinction coefficient (k) of the films were obtained by ellipsometric technique. Hall effect measurements reveal p-type conduction with mobility 7.8 cm2V-1s-1 and 15 cm2V-1s-1 and conductivity of 8.5 S/cm and 17.1 S/cm respectively for the 0.1 M and 0.25 M samples. Photoluminescence (PL) spectrum of the samples show a broad emission which covers near band edge (NBE) as well as deep level emission (DLE) in the region 380 nm-620 nm.

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method

NASA Astrophysics Data System (ADS)

Chidambaram, Thenappan

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

Quantum transport in antidot arrays in magnetic fields

NASA Astrophysics Data System (ADS)

Ishizaka, Satoshi; Nihey, Fumiyuki; Nakamura, Kazuo; Sone, Jun' Ichi; Ando, Tsuneya

1995-04-01

Transport in antidot arrays in magnetic fields is studied numerically. We calculate the density of states and conductivity tensor by the self-consistent Born approximation. Although peak positions of the density of states agree well with the quantization condition for several short periodic orbits, the behavior of the conductivity tensor is very complicated. Coupling among the periodic orbits causes an oscillation in the Hall conductivity in magnetic fields around the localized peak. In low magnetic fields, the skipping orbit, which runs from an antidot to its neighboring antidot, plays a crucial role for diagonal conductivity, and its coupling with the periodic orbits causes an oscillation in the diagonal conductivity. The resulting magnetoresistance oscillates with a period near one magnetic flux quantum as observed in recent experiments. Furthermore, the oscillation due to the manifestation of Hofstadter's butterfly is present in both the diagonal conductivity and the Hall conductivity.

Fluctuations, Electron Transport, and Flow Shear in 2D Axial, Azimuthal (z-θ) Hybrid Hall Thruster Simulations.

NASA Astrophysics Data System (ADS)

Fernandez, Eduardo; Gascon, Nicolas; Knoll, Aaron; Scharfe, Michelle; Cappelli, Mark

2007-11-01

Motivated by the inability of radial-axial (r-z) simulations to properly treat cross-field electron transport in Hall thrusters, a novel 2D z-θ model has been implemented. In common with many r-z descriptions, the simulation is hybrid in nature and assumes quasi-neutrality. Unlike r-z models, electron transport is not enhanced with an ad-hoc mobility coefficient; instead it is given by collisional or ``classical'' terms as well as ``anomalous'' contributions associated with azimuthal electric field fluctuations. Results indicate that anomalous transport dominates classical transport for most of the channel and near field, except in a strong electron flow shear region near the channel exit. The correlation between flow shear, fluctuation behavior, and electron transport will be examined, along with experimental data from the Stanford Hall Thruster. Our findings make a strong link to the turbulent transport suppression mechanism by flow shear seen in fusion devices. The scheme for combining the r-z and z-θ descriptions into an upcoming 3D hybrid model will be presented.

Reply to “Comment on ‘Magnetotransport signatures of a single nodal electron pocket constructed from Fermi arcs' ”

DOE PAGES

Harrison, N.; Sebastian, S. E.

2017-10-12

In this paper, we provide arguments relating to those recently made in a comment by Chakravarty and Wang, who question the validity of our proposed charge-density wave Fermi surface reconstruction model and its relation to sign changes in the Hall effect. First, we show that the form of rounding of the vertices (i.e. sharp corners) of the reconstructed electron pocket, as used in our model calculations of the Hall coefficient, is consistent with Bragg reflection from the periodic potential of a charge-density wave, rather than being arbitrarily chosen. Second, we provide further justifications for why an oscillatory transport scattering timemore » provides a useful means for modeling Shubnikov–de Haas oscillations in the Hall effect, in the situation where a Fermi surface pocket departs from the ideal circular form. Third and finally, we discuss recent experimental evidence gathered from two different families of underdoped cuprates supporting the existence of a single electron pocket produced by biaxial charge-density wave order as a universal phenomena.« less

Hall thruster with grooved walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Hong; Ning Zhongxi; Yu Daren

2013-02-28

Axial-oriented and azimuthal-distributed grooves are formed on channel walls of a Hall thruster after the engine undergoes a long-term operation. Existing studies have demonstrated the relation between the grooves and the near-wall physics, such as sheath and electron near-wall transport. The idea to optimize the thruster performance with such grooves was also proposed. Therefore, this paper is devoted to explore the effects of wall grooves on the discharge characteristics of a Hall thruster. With experimental measurements, the variations on electron conductivity, ionization distribution, and integrated performance are obtained. The involved physical mechanisms are then analyzed and discussed. The findings helpmore » to not only better understand the working principle of Hall thruster discharge but also establish a physical fundamental for the subsequent optimization with artificial grooves.« less

Hall effect spintronics for gas detection

NASA Astrophysics Data System (ADS)

Gerber, A.; Kopnov, G.; Karpovski, M.

2017-10-01

We present the concept of magnetic gas detection by the extraordinary Hall effect. The technique is compatible with the existing conductometric gas detection technologies and allows the simultaneous measurement of two independent parameters: resistivity and magnetization affected by the target gas. Feasibility of the approach is demonstrated by detecting low concentration hydrogen using thin CoPd films as the sensor material. The Hall effect sensitivity of the optimized samples exceeds 240% per 104 ppm at hydrogen concentrations below 0.5% in the hydrogen/nitrogen atmosphere, which is more than two orders of magnitude higher than the sensitivity of the conductance detection.

Levitation of current carrying states in the lattice model for the integer quantum Hall effect.

PubMed

Koschny, T; Potempa, H; Schweitzer, L

2001-04-23

The disorder driven quantum Hall to insulator transition is investigated for a two-dimensional lattice model. The Hall conductivity and the localization length are calculated numerically near the transition. For uncorrelated and weakly correlated disorder potentials the current carrying states are annihilated by the negative Chern states originating from the band center. In the presence of correlated disorder potentials with correlation length larger than approximately half the lattice constant the floating up of the critical states in energy without merging is observed. This behavior is similar to the levitation scenario proposed for the continuum model.

Magnetic flux and heat losses by diffusive, advective, and Nernst effects in magnetized liner inertial fusion-like plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velikovich, A. L.; Giuliani, J. L.; Zalesak, S. T.

The magnetized liner inertial fusion (MagLIF) approach to inertial confinement fusion [Slutz et al., Phys. Plasmas 17, 056303 (2010); Cuneo et al., IEEE Trans. Plasma Sci. 40, 3222 (2012)] involves subsonic/isobaric compression and heating of a deuterium-tritium plasma with frozen-in magnetic flux by a heavy cylindrical liner. The losses of heat and magnetic flux from the plasma to the liner are thereby determined by plasma advection and gradient-driven transport processes, such as thermal conductivity, magnetic field diffusion, and thermomagnetic effects. Theoretical analysis based on obtaining exact self-similar solutions of the classical collisional Braginskii's plasma transport equations in one dimension demonstratesmore » that the heat loss from the hot compressed magnetized plasma to the cold liner is dominated by transverse heat conduction and advection, and the corresponding loss of magnetic flux is dominated by advection and the Nernst effect. For a large electron Hall parameter (ω{sub e}τ{sub e}≫1), the effective diffusion coefficients determining the losses of heat and magnetic flux to the liner wall are both shown to decrease with ω{sub e}τ{sub e} as does the Bohm diffusion coefficient cT/(16eB), which is commonly associated with low collisionality and two-dimensional transport. We demonstrate how this family of exact solutions can be used for verification of codes that model the MagLIF plasma dynamics.« less

Phenomenological theories of the low-temperature pseudogap: Hall number, specific heat, and Seebeck coefficient

NASA Astrophysics Data System (ADS)

Verret, S.; Simard, O.; Charlebois, M.; Sénéchal, D.; Tremblay, A.-M. S.

2017-09-01

Since its experimental discovery, many phenomenological theories successfully reproduced the rapid rise of the Hall number nH, going from p at low doping to 1 +p at the critical doping p* of the pseudogap in superconducting cuprates. Further comparison with experiments is now needed in order to narrow down candidates. In this paper, we consider three previously successful phenomenological theories in a unified formalism—an antiferromagnetic mean field (AF), a spiral incommensurate antiferromagnetic mean field (sAF), and the Yang-Rice-Zhang (YRZ) theory. We find a rapid rise in the specific heat and a rapid drop in the Seebeck coefficient for increasing doping across the transition in each of those models. The predicted rises and drops are locked, not to p*, but to the doping where antinodal electron pockets, characteristic of each model, appear at the Fermi surface shortly before p*. While such electron pockets are still to be found in experiments, we discuss how they could provide distinctive signatures for each model. We also show that the range of doping where those electron pockets would be found is strongly affected by the position of the van Hove singularity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jedrecy, N., E-mail: jedrecy@insp.jussieu.fr; Hamieh, M.; Hebert, C.

We show that the well-established universal scaling σ{sub xy}{sup AHE} ∼ σ{sub xx}{sup 1.6} between anomalous Hall and longitudinal conductivities in the low conductivity regime (σ{sub xx} < 10{sup 4} Ω{sup −1} cm{sup −1}) transforms into the scaling σ{sub xy}{sup AHE} ∼ σ{sub xx}{sup 2} at the onset of strong electron localization. The crossover between the two relations is observed in magnetite-derived Zn{sub x}Fe{sub 3-x}O{sub 4} thin films where an insulating/hopping regime follows a bad metal/hopping regime below the Verwey transition temperature T{sub v}. Our results demonstrate that electron localization effects come into play in the anomalous Hall effect (AHE)more » modifying significantly the scaling exponent. In addition, the thermal evolution of the anomalous Hall resistivity suggests the existence of spin polarons whose size would decrease below T{sub v}.« less

Performance Evaluation of a 50kW Hall Thruster

NASA Technical Reports Server (NTRS)

Jacobson, David T.; Jankovsky, Robert S.

1999-01-01

An experimental investigation was conducted on a laboratory model Hall thruster designed to operate at power levels up to 50 kW. During this investigation the engine's performance was characterized over a range of discharge currents from 10 to 36 A and a range of discharge voltages from 200 to 800 V Operating on the Russian cathode a maximum thrust of 966 mN was measured at 35.6 A and 713.0 V. This corresponded to a specific impulse of 3325 s and an efficiency of 62%. The maximum power the engine was operated at was 25 kW. Additional testing was conducted using a NASA cathode designed for higher current operation. During this testing, thrust over 1 N was measured at 40.2 A and 548.9 V. Several issues related to operation of Hall thrusters at these high powers were encountered.

Tunability of the fractional quantum Hall states in buckled Dirac materials

NASA Astrophysics Data System (ADS)

Apalkov, Vadym M.; Chakraborty, Tapash

2014-12-01

We report on the fractional quantum Hall states of germanene and silicene where one expects a strong spin-orbit interaction. This interaction causes an enhancement of the electron-electron interaction strength in one of the Landau levels corresponding to the valence band of the system. This enhancement manifests itself as an increase of the fractional quantum Hall effect gaps compared to that in graphene and is due to the spin-orbit induced coupling of the Landau levels of the conduction and valence bands, which modifies the corresponding wave functions and the interaction within a single level. Due to the buckled structure, a perpendicular electric field lifts the valley degeneracy and strongly modifies the interaction effects within a single Landau level: in one valley the perpendicular electric field enhances the interaction strength in the conduction band Landau level, while in another valley, the electric field strongly suppresses the interaction effects.

Effect of band filling on anomalous Hall conductivity and magneto-crystalline anisotropy in NiFe epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zhong; Jiang, Hang-Yu; Zhou, Shi-Ming, E-mail: shiming@tongji.edu.cn

2016-01-15

The anomalous Hall effect (AHE) and magneto-crystalline anisotropy (MCA) are investigated in epitaxial Ni{sub x}Fe{sub 1−x} thin films grown on MgO (001) substrates. The scattering independent term b of anomalous Hall conductivity shows obvious correlation with cubic magneto-crystalline anisotropy K{sub 1}. When nickel content x decreasing, both b and K{sub 1} vary continuously from negative to positive, changing sign at about x = 0.85. Ab initio calculations indicate Ni{sub x}Fe{sub 1−x} has more abundant band structures than pure Ni due to the tuning of valence electrons (band fillings), resulting in the increased b and K{sub 1}. This remarkable correlation betweenmore » b and K{sub 1} can be attributed to the effect of band filling near the Fermi surface.« less

Anomalous Hall effect in calcium-doped lanthanum cobaltite and gadolinium

NASA Astrophysics Data System (ADS)

Baily, Scott Alan

The physical origin of the anomalous (proportional to magnetization) Hall effect is not very well understood. While many theories account for a Hall effect proportional to the magnetization of a material, these theories often predict effects significantly smaller than those found in ferromagnetic materials. An even more significant deficiency of the conventional theories is that they predict an anomalous Hall resistivity that is proportional to a power of the resistivity, and in the absence of a metal insulator transition cannot account for the anomalous Hall effect that peaks near TC. Recent models based on a geometric, or Berry, phase have had a great deal of success describing the anomalous Hall effect in double-exchange systems (e.g., lanthanum manganite and chromium dioxide). In gadolinium, as in double-exchange magnets, the exchange interaction is mediated by the conduction electrons and the anomalous Hall effect may therefore resemble that of CrO2 and other metallic double-exchange ferromagnets. Lanthanum cobaltite is similar to manganite in many ways, but a strong double-exchange interaction is not present. Calcium-doped lanthanum cobaltite films were found to have the largest anomalous Hall effect of any ferromagnetic metal. The primary purpose of this study is to gain insight into the origin of the anomalous Hall effect with the hope that these theories can be extended to account for the effect in other materials. The Hall resistivity, magnetoresistance, and magnetization of a Gadolinium single crystal were measured in fields up to 30 T. Cobaltite films were grown via laser ablation and characterized by a variety of techniques. Hall resistivity, magnetoresistance, magnetization, and magnetothermopower of L 1-xCaxCoO3 samples with 0.15 < x < 0.4 were measured in fields up to 7 T. The Gd results suggest that Berry's phase contributes partially to the Hall effect near TC. Berry's phase theories hold promise for explaining the large anomalous Hall effect in La1-xCaxCoO3 near T C, but the material presents many additional complexities, including a unique low temperature magnetoresistance. At low temperature, the Hall effect may be best explained by spin-polarized carriers scattering off of orbital disorder in spin-ordered clusters.

3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

NASA Astrophysics Data System (ADS)

Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

2017-09-01

The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

Large anomalous Nernst and spin Nernst effects in the noncollinear antiferromagnets Mn3X (X =Sn ,Ge ,Ga )

NASA Astrophysics Data System (ADS)

Guo, Guang-Yu; Wang, Tzu-Cheng

2017-12-01

Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in antiferromagnetic spintronics. Here we study the anomalous Nernst effect (ANE), a phenomenon having the same origin as the AHE, and also the spin Nernst effect (SNE) as well as AHE and the spin Hall effect (SHE) in noncollinear antiferromagnetic Mn3X (X =Sn , Ge, Ga) within the Berry phase formalism based on ab initio relativistic band structure calculations. For comparison, we also calculate the anomalous Nernst conductivity (ANC) and anomalous Hall conductivity (AHC) of ferromagnetic iron as well as the spin Nernst conductivity (SNC) of platinum metal. Remarkably, the calculated ANC at room temperature (300 K) for all three alloys is huge, being 10-40 times larger than that of iron. Moreover, the calculated SNC for Mn3Sn and Mn3Ga is also larger, being about five times larger than that of platinum. This suggests that these antiferromagnets would be useful materials for thermoelectronic devices and spin caloritronic devices. The calculated ANC of Mn3Sn and iron are in reasonably good agreement with the very recent experiments. The calculated SNC of platinum also agrees with the very recent experiments in both sign and magnitude. The calculated thermoelectric and thermomagnetic properties are analyzed in terms of the band structures as well as the energy-dependent AHC, ANC, SNC, and spin Hall conductivity via the Mott relations.

Hall effect on a Merging Formation Process of a Field-Reversed Configuration

NASA Astrophysics Data System (ADS)

Kaminou, Yasuhiro; Guo, Xuehan; Inomoto, Michiaki; Ono, Yasushi; Horiuchi, Ritoku

2015-11-01

Counter-helicity spheromak merging is one of the formation methods of a Field-Reversed Configuration (FRC). In counter-helicity spheromak merging, two spheromaks with opposing toroidal fields merge together, through magnetic reconnection events and relax into a FRC, which has no or little toroidal field. This process contains magnetic reconnection and a relaxation phenomena, and the Hall effect has some essential effects on these process because the X-point in the magnetic reconnection or the O-point of the FRC has no or little magnetic field. However, the Hall effect as both global and local effect on counter-helicity spheromak merging has not been elucidated. In this poster, we conducted 2D/3D Hall-MHD simulations and experiments of counter-helicity spheromak merging. We find that the Hall effect enhances the reconnection rate, and reduces the generation of toroidal sheared-flow. The suppression of the ``slingshot effect'' affects the relaxation process. We will discuss details in the poster.

Effects of an Internally-Mounted Cathode on Hall Thruster Plume Properties

NASA Technical Reports Server (NTRS)

Hofer, Richard R.; Johnson, Lee K.; Goebel, Dan M.; Fitzgerald, Dennis J.

2006-01-01

The effects of cathode position on the plume properties of an 8 kW BHT-8000 Busek Hall thruster are discussed. Experiments were conducted at the Jet Propulsion Laboratory (JPL) in a vacuum chamber suitable for the development and qualification of high-power Hall thrusters. Multi-mode Hall thruster operation was demonstrated at operating conditions ranging from 200-500 V discharge voltage, 10-40 A discharge current, and 2-8 kW discharge power. Reductions in plume divergence and increased near-field plume symmetries were found to result from the use of an internally-mounted cathode instead of the traditional externally-mounted configuration. High-current hollow cathodes developed at JPL utilizing lanthanum hexaboride (LaB6) emitters were also demonstrated. Discharge currents up to 100 A were achieved with the cathode operating alone and up to 40 A during operation with the Hall thruster. LaB6 cathodes were investigated because of their potential to reduce overall system cost and risk due to less stringent xenon purity and handling requirements.

Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators

NASA Astrophysics Data System (ADS)

Chang, Cui-Zu; Li, Mingda

2016-03-01

The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity {σyx}=\\frac{{{e}2}}{h} without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this topical review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Nonlinear dynamics induced anomalous Hall effect in topological insulators

PubMed Central

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-01

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics. PMID:26819223

Nonlinear dynamics induced anomalous Hall effect in topological insulators.

PubMed

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-28

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics.

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2010-02-19

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Composition-dependent magnetic response properties of Mn1 -xFexGe alloys

NASA Astrophysics Data System (ADS)

Mankovsky, S.; Wimmer, S.; Polesya, S.; Ebert, H.

2018-01-01

The composition-dependent behavior of the Dzyaloshinskii-Moriya interaction (DMI), the spin-orbit torque (SOT), as well as anomalous and spin Hall conductivities of Mn1 -xFexGe alloys have been investigated by first-principles calculations using the relativistic multiple scattering Korringa-Kohn-Rostoker (KKR) formalism. The Dxx component of the DMI exhibits a strong dependence on the Fe concentration, changing sign at x ≈0.85 in line with previous theoretical calculations as well as with experimental results demonstrating the change of spin helicity at x ≈0.8 . A corresponding behavior with a sign change at x ≈0.5 is predicted also for the Fermi-sea contribution to the SOT, because this is closely related to the DMI. In the case of anomalous and spin Hall effects it is shown that the calculated Fermi-sea contributions are rather small and the composition-dependent behavior of these effects are determined mainly by the electronic states at the Fermi level. The spin-orbit-induced scattering mechanisms responsible for both these effects suggest a common origin of the minimum of the anomalous Hall effect and the sign change of the spin Hall effect conductivities.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3 -xGeTe2

NASA Astrophysics Data System (ADS)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; Petrovic, C.

2018-04-01

We report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe3 -xGeTe2 (x ≈0.36 ) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρx y/μ0Heff and longitudinal resistivity ρxx 2M /μ0Heff implies that the AHE in Fe3 -xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxy A below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.

Effect of segmented electrode length on the performances of Hall thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Chen, Long; Liu, Guangrui; Bian, Xingyu; Yin, Yan

2016-09-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of ionization rate in discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected.

Anomalous Nernst and thermal Hall effects in tilted Weyl semimetals

NASA Astrophysics Data System (ADS)

Ferreiros, Yago; Zyuzin, A. A.; Bardarson, Jens H.

2017-09-01

We study the anomalous Nernst and thermal Hall effects in a linearized low-energy model of a tilted Weyl semimetal, with two Weyl nodes separated in momentum space. For inversion symmetric tilt, we give analytic expressions in two opposite limits: For a small tilt, corresponding to a type-I Weyl semimetal, the Nernst conductivity is finite and independent of the Fermi level; for a large tilt, corresponding to a type-II Weyl semimetal, it acquires a contribution depending logarithmically on the Fermi energy. This result is in a sharp contrast to the nontilted case, where the Nernst response is known to be zero in the linear model. The thermal Hall conductivity similarly acquires Fermi surface contributions, which add to the Fermi level-independent, zero-tilt result, and is suppressed as one over the tilt parameter at half filling in the type-II phase. In the case of inversion-breaking tilt, with the tilting vector of equal modulus in the two Weyl cones, all Fermi surface contributions to both anomalous responses cancel out, resulting in zero Nernst conductivity. We discuss two possible experimental setups, representing open and closed thermoelectric circuits.

An evaluation of krypton propellant in Hall thrusters

NASA Astrophysics Data System (ADS)

Linnell, Jesse Allen

Due to its high specific impulse and low price, krypton has long sparked interest as an alternate Hall thruster propellant. Unfortunately at the moment, krypton's relatively poor performance precludes it as a legitimate option. This thesis presents a detailed investigation into krypton operation in Hall thrusters. These findings suggest that the performance gap can be decreased to 4% and krypton can finally become a realistic propellant option. Although krypton has demonstrated superior specific impulse, the xenon-krypton absolute efficiency gap ranges between 2 and 15%. A phenomenological performance model indicates that the main contributors to the efficiency gap are propellant utilization and beam divergence. Propellant utilization and beam divergence have relative efficiency deficits of 5 and 8%, respectively. A detailed characterization of internal phenomena is conducted to better understand the xenon-krypton efficiency gap. Krypton's large beam divergence is found to be related to a defocusing equipotential structure and a weaker magnetic field topology. Ionization processes are shown to be linked to the Hall current, the magnetic mirror topology, and the perpendicular gradient of the magnetic field. Several thruster design and operational suggestions are made to optimize krypton efficiency. Krypton performance is optimized for discharge voltages above 500 V and flow rates corresponding to an a greater than 0.015 mg/(mm-s), where alpha is a function of flow rate and discharge channel dimensions (alpha = m˙alphab/Ach). Performance can be further improved by increasing channel length or decreasing channel width for a given flow rate. Also, several magnetic field design suggestions are made to enhance ionization and beam focusing. Several findings are presented that improve the understanding of general Hall thruster physics. Excellent agreement is shown between equipotential lines and magnetic field lines. The trim coil is shown to enhance beam focusing, ionization processes, and electron dynamics. Electron mobility and the Hall parameter are studied and compared to different mobility models. Azimuthal electron current is studied using a fluid and particle drift approach. Analyses of several magnetic field features are conducted and simple tools are suggested for the development of future Hall thrusters. These findings have strong implications for future Hall thruster design, lifetimes, and modeling.

Reverberant acoustic energy in auditoria that comprise systems of coupled rooms

NASA Astrophysics Data System (ADS)

Summers, Jason Erik

A frequency-dependent model for levels and decay rates of reverberant energy in systems of coupled rooms is developed and compared with measurements conducted in a 1:10 scale model and in Bass Hall, Fort Worth, TX. Schroeder frequencies of subrooms, fSch, characteristic size of coupling apertures, a, relative to wavelength lambda, and characteristic size of room surfaces, l, relative to lambda define the frequency regions. At high frequencies [HF (f >> f Sch, a >> lambda, l >> lambda)], this work improves upon prior statistical-acoustics (SA) coupled-ODE models by incorporating geometrical-acoustics (GA) corrections for the model of decay within subrooms and the model of energy transfer between subrooms. Previous researchers developed prediction algorithms based on computational GA. Comparisons of predictions derived from beam-axis tracing with scale-model measurements indicate that systematic errors for coupled rooms result from earlier tail-correction procedures that assume constant quadratic growth of reflection density. A new algorithm is developed that uses ray tracing rather than tail correction in the late part and is shown to correct this error. At midfrequencies [MF (f >> f Sch, a ˜ lambda)], HF models are modified to account for wave effects at coupling apertures by including analytically or heuristically derived power transmission coefficients tau. This work improves upon prior SA models of this type by developing more accurate estimates of random-incidence tau. While the accuracy of the MF models is difficult to verify, scale-model measurements evidence the expected behavior. The Biot-Tolstoy-Medwin-Svensson (BTMS) time-domain edge-diffraction model is newly adapted to study transmission through apertures. Multiple-order BTMS scattering is theoretically and experimentally shown to be inaccurate due to the neglect of slope diffraction. At low frequencies (f ˜ f Sch), scale-model measurements have been qualitatively explained by application of previously developed perturbation models. Measurements newly confirm that coupling strength between three-dimensional rooms is related to unperturbed pressure distribution on the coupling surface. In Bass Hall, measurements are conducted to determine the acoustical effects of the coupled stage house on stage and in the audience area. The high-frequency predictions of statistical- and geometrical-acoustics models agree well with measured results. Predictions of the transmission coefficients of the coupling apertures agree, at least qualitatively, with the observed behavior.

Photonic topological boundary pumping as a probe of 4D quantum Hall physics

NASA Astrophysics Data System (ADS)

Zilberberg, Oded; Huang, Sheng; Guglielmon, Jonathan; Wang, Mohan; Chen, Kevin P.; Kraus, Yaacov E.; Rechtsman, Mikael C.

2018-01-01

When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.

Photonic topological boundary pumping as a probe of 4D quantum Hall physics.

PubMed

Zilberberg, Oded; Huang, Sheng; Guglielmon, Jonathan; Wang, Mohan; Chen, Kevin P; Kraus, Yaacov E; Rechtsman, Mikael C

2018-01-03

When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.

Correlation of Hall and Shubnikov-de Haas Oscillations and Impurity States in Sn- and I- Doped Single Crystals p-Bi 2 Te 3

NASA Astrophysics Data System (ADS)

Tahar, M. Z.; Popov, D. I.; Nemov, S. A.

2018-03-01

Oscillations of the Hall coefficient and Shubnikov-de Haas (SdH) were observed in p-Bi2Te3 crystals doped with Sn (acceptor) and with I (donor) in magnetic fields up to 9 T parallel to the C3 trigonal axis at low temperatures (2 K < T < 20K), which is an evidence of the spatial homogeneity of carriers in complex solid solutions. This supports the existence of a narrow band of Sn states (partially filled) against the background of the valence band acting as a reservoir with high density of states partially filled with electrons. Previously, in these systems in which the Fermi level was in the light-hole valence band, both large Hall and SdH oscillations were observed, with ∼π phase shift between them, whereas when the Fermi level was in the heavy-hole valence band (larger acceptor content), no quantum oscillations were observed. It was concluded that the observed low amplitude quantum oscillations may be attributed to the shifting of the reservoir from the light-hole band to the heavy-hole, and the observed phase shift in the range 0 - π/2 between Hall and SdH oscillations may be attributed to filling factor of the reservoir with electrons, which varies with I content. Experimental results along with theoretical explanation of these correlations are presented.

Temperature Ddependence of Anomalous Hall Conductivity in Rashba-type Ferromagnets

NASA Astrophysics Data System (ADS)

Sakuma, Akimasa

2018-03-01

We theoretically investigated the anomalous Hall conductivity (AHC) of Rashba-type ferromagnets at a finite temperature, taking into account spin fluctuation. We observed that the intrinsic AHC increases with increasing temperature. This can be understood from the characteristic nature of the spin chirality in the k-space, which increases with decreasing exchange splitting (EXS) when the spin-orbit interaction is much smaller than the EXS. The extrinsic part of the AHC also increases with temperature owing to the enhancement of the scattering strength of electrons due to the thermal fluctuation of the exchange field.

Hyperscaling violating black hole solutions and magneto-thermoelectric DC conductivities in holography

NASA Astrophysics Data System (ADS)

Ge, Xian-Hui; Tian, Yu; Wu, Shang-Yu; Wu, Shao-Feng

2017-08-01

We derive new black hole solutions in Einstein-Maxwell-axion-dilaton theory with a hyperscaling violation exponent. We then examine the corresponding anomalous transport exhibited by cuprate strange metals in the normal phase of high-temperature superconductors via gauge-gravity duality. Linear-temperature-dependence resistivity and quadratic-temperature-dependence inverse Hall angle can be achieved. In the high-temperature regime, the heat conductivity and Hall Lorenz ratio are proportional to the temperature. The Nernst signal first increases as temperature goes up, but it then decreases with increasing temperature in the high-temperature regime.

Large anomalous Hall effect in a non-collinear antiferromagnet Mn3Sn at room temperature

NASA Astrophysics Data System (ADS)

Higo, Tomoya; Kiyohara, Naoki; Nakatsuji, Satoru

Recent development in theoretical and experimental studies have provided a framework for understanding the anomalous Hall effect using Berry-phase concepts, and this perspective has led to predictions that, under certain conditions, a large anomalous Hall effect may appear in spin liquids and antiferromagnets. In this talk, we will present experimental results showing that the antiferromagnet Mn3Sn, which has a non-collinear 120-degree spin order, exhibits a large anomalous Hall effect. The magnitude of the Hall conductivity is ~ 20 Ω-1 cm-1 at room temperature and > 100 Ω-1 cm-1 at low temperatures. We found that a main component of the Hall signal, which is nearly independent of a magnetic field and magnetization, can change the sign with the reversal of a small applied field, corresponding to the rotation of the staggered moments of the non-collinear antiferromagnetic spin order which carries a very small net moment of a few of mμB. Supported by PRESTO, JST, and Grants-in-Aid for Program for Advancing Strategic International Networks to Accelerate the Circulation of Talented Researchers (No. R2604) and Scientific Research on Innovative Areas (15H05882 and 15H05883) from JSPS.

Covariant Conservation Laws and the Spin Hall Effect in Dirac-Rashba Systems

NASA Astrophysics Data System (ADS)

Milletarı, Mirco; Offidani, Manuel; Ferreira, Aires; Raimondi, Roberto

2017-12-01

We present a theoretical analysis of two-dimensional Dirac-Rashba systems in the presence of disorder and external perturbations. We unveil a set of exact symmetry relations (Ward identities) that impose strong constraints on the spin dynamics of Dirac fermions subject to proximity-induced interactions. This allows us to demonstrate that an arbitrary dilute concentration of scalar impurities results in the total suppression of nonequilibrium spin Hall currents when only Rashba spin-orbit coupling is present. Remarkably, a finite spin Hall conductivity is restored when the minimal Dirac-Rashba model is supplemented with a spin-valley interaction. The Ward identities provide a systematic way to predict the emergence of the spin Hall effect in a wider class of Dirac-Rashba systems of experimental relevance and represent an important benchmark for testing the validity of numerical methodologies.

Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Liu, Yang; Magill, B. A.; Moon, B. H.; Engel, L. W.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.

2014-06-01

In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure

NASA Astrophysics Data System (ADS)

Łepkowski, S. P.; Bardyszewski, W.

2017-02-01

Combining the k · p method with the third-order elasticity theory, we perform a theoretical study of the pressure-induced topological phase transition and the pressure evolution of topologically protected edge states in InN/GaN and In-rich InGaN/GaN quantum wells. We show that for a certain range of the quantum well parameters, thanks to a negative band gap pressure coefficient, it is possible to continuously drive the system from the normal insulator state through the topological insulator into the semimetal phase. The critical pressure for the topological phase transition depends not only on the quantum well thickness but also on the width of the Hall bar, which determines the coupling between the edge states localized at the opposite edges. We also find that in narrow Hall bar structures, near the topological phase transition, a significant Rashba-type spin splitting of the lower and upper branches of the edge state dispersion curve appears. This effect originates from the lack of the mirror symmetry of the quantum well potential caused by the built-in electric field, and can be suppressed by increasing the Hall bar width. When the pressure increases, the energy dispersion of the edge states becomes more parabolic-like and the spin splitting decreases. A further increase of pressure leads to the transition to a semimetal phase, which occurs due to the closure of the indirect 2D bulk band gap. The difference between the critical pressure at which the system becomes semimetallic, and the pressure for the topological phase transition, correlates with the variation of the pressure coefficient of the band gap in the normal insulator state.

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure.

PubMed

Łepkowski, S P; Bardyszewski, W

2017-02-08

Combining the k · p method with the third-order elasticity theory, we perform a theoretical study of the pressure-induced topological phase transition and the pressure evolution of topologically protected edge states in InN/GaN and In-rich InGaN/GaN quantum wells. We show that for a certain range of the quantum well parameters, thanks to a negative band gap pressure coefficient, it is possible to continuously drive the system from the normal insulator state through the topological insulator into the semimetal phase. The critical pressure for the topological phase transition depends not only on the quantum well thickness but also on the width of the Hall bar, which determines the coupling between the edge states localized at the opposite edges. We also find that in narrow Hall bar structures, near the topological phase transition, a significant Rashba-type spin splitting of the lower and upper branches of the edge state dispersion curve appears. This effect originates from the lack of the mirror symmetry of the quantum well potential caused by the built-in electric field, and can be suppressed by increasing the Hall bar width. When the pressure increases, the energy dispersion of the edge states becomes more parabolic-like and the spin splitting decreases. A further increase of pressure leads to the transition to a semimetal phase, which occurs due to the closure of the indirect 2D bulk band gap. The difference between the critical pressure at which the system becomes semimetallic, and the pressure for the topological phase transition, correlates with the variation of the pressure coefficient of the band gap in the normal insulator state.

Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain

NASA Astrophysics Data System (ADS)

Demidov, E. V.; Grabov, V. M.; Komarov, V. A.; Kablukova, N. S.; Krushel'nitskii, A. N.

2018-03-01

The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.

The Ni and Co substitutions in iron chalcogenide single crystals

NASA Astrophysics Data System (ADS)

Bezusyy, V. L.; Gawryluk, D. J.; Malinowski, A.; Berkowski, M.; Cieplak, Marta Z.

2015-03-01

We study the ab-plane resistivity and Hall effect in Fe1-yMyTe0.65Se0.35 single crystals with M =Co or Ni, and y up to 0.2. The crystals are grown by Bridgman's method. The low-temperature Hall coefficient RH changes sign to negative for crystals with y exceeding 0.135 (Co) and 0.06 (Ni), consistent with the electron doping induced by these impurities. However, the RH remains positive for all samples at high T, suggesting that remnant hole pockets survive the doping, but the holes become localized at low T in heavily doped crystals. Superconducting transition temperature (Tc) approaches zero for y = 0.14 (Co), and 0.03 (Ni), while the resistivity at the Tc onset is only weakly affected by Co doping, but it increases strongly for the Ni. These results suggest that in case of Co impurity the Tc suppression may be attributed to electron doping. On the other hand, the Ni substitution, in addition to electron doping, induces strong localization effects at small impurity contents. Using two-band conduction model we argue that the localization of electron carriers is responsible for strong superconductivity suppression by Ni impurity. Supported by EC through the FunDMS Advanced Grant of the ERC (FP7 Ideas), by the Polish NCS Grant 2011/01/B/ST3/00462, and by the French-Polish Program PICS 2012. Performed in the laboratories co-financed by NanoFun Project POIG.02.02.00-00-025/09.

On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A.

2016-06-15

The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, ismore » obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.« less

Comparison of two data acquisition and processing systems of Moller polarimeter in Hall A of Jefferson Lab

DOE PAGES

Vereshchaka, Vadym V.; Glamazdin, Oleksandr V.; Pomatsalyuk, Roman I.

2014-07-01

Two data acquisition and processing systems are used simultaneously to measure electron beam polarization by Moller polarimeter in Hall A of Jefferson Lab (Newport News, VA, USA). The old system (since 1997) is fully functional, but is not repairable in case of malfunction (system modules arenot manufactured anymore). The new system (since 2010) based on flash-ADC is more accurate, but currently requires more detailed adjustment and further improvement. Description and specifications of two data acquisition and processing systems have been given. The results of polarization measurements during experiments conducted in Hall A from 2010 to 2012 are compared.

Hall effects on hydromagnetic free convection flow along a porous flat plate with mass transfer

NASA Astrophysics Data System (ADS)

Hossain, M. A.; Rashid, R. I. M. A.

1987-01-01

Effect of Hall current on the unsteady free convection flow of a viscous incompressible and electrically conducting fluid, in presence of foreign gases (such as H2, CO2, H2O, NH3), along an infinite vertical porous flat plate subjected to a transpiration velocity inversely proportional to the square-root of time is investigated in the presence of a uniform transverse magnetic field. The results are discussed with the effects of the parameters Gc (the Grashof number for mass transfer), m (the Hall parameter) and Sc (the Schmidt number) for Pr = 0.71, which represents air.

Analytical theory and possible detection of the ac quantum spin Hall effect

DOE PAGES

Deng, W. Y.; Ren, Y. J.; Lin, Z. X.; ...

2017-07-11

Here, we develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

77 FR 12235 - Meeting of the National Advisory Council on Innovation and Entrepreneurship

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-29

... Entrepreneurship will hold a meeting on Tuesday, March 13, 2012. The open meeting will be conducted from 10 a.m.-1 p.m. and will be open to the public. The meeting will take place at Gallier Hall, 545 St. Charles.... Time: 10 a.m.-1 p.m. (CST). ADDRESSES: Gallier Hall, 545 St. Charles Avenue, New Orleans, LA 70130...

Raising the Bar: Standards and Tests in California's High Schools. A Town Hall Meeting.

ERIC Educational Resources Information Center

Arnstine, Barbara; Futernick, Ken; Hodson, Timothy A.; Ostgaard, Kolleen

In 1999, the LegiSchool Project planned to conduct the 12th in its series of televised Town Hall Meetings to provide a forum in which California high school students, educators, and legislators can engage in face-to-face dialogue about problems of mutual interest. For 1999, the topic is standards and tests in California high schools. This guide…

Fostering a Sense of Community in Residence Halls: A Role for Housing and Residential Professionals in Increasing College Student Persistence

ERIC Educational Resources Information Center

Erb, Natalee M.; Sinclair, Matthew S.; Braxton, John M.

2015-01-01

Fostering a sense of community should be at the center of every housing and residence life professional's efforts. Research conducted by Braxton et al. (2014) revealed that students who are able to identify with their residence hall community, interact with peers in this community, and find solidarity within the community experience an increased…

Metallic Wall Hall Thrusters

NASA Technical Reports Server (NTRS)

Goebel, Dan Michael (Inventor); Hofer, Richard Robert (Inventor); Mikellides, Ioannis G. (Inventor)

2016-01-01

A Hall thruster apparatus having walls constructed from a conductive material, such as graphite, and having magnetic shielding of the walls from the ionized plasma has been demonstrated to operate with nearly the same efficiency as a conventional non-magnetically shielded design using insulators as wall components. The new design is believed to provide the potential of higher power and uniform operation over the operating life of a thruster device.

Metallic Wall Hall Thrusters

NASA Technical Reports Server (NTRS)

Goebel, Dan Michael (Inventor); Hofer, Richard Robert (Inventor); Mikellides, Ioannis G. (Inventor)

2018-01-01

A Hall thruster apparatus having walls constructed from a conductive material, such as graphite, and having magnetic shielding of the walls from the ionized plasma has been demonstrated to operate with nearly the same efficiency as a conventional nonmagnetically shielded design using insulators as wall components. The new design is believed to provide the potential of higher power and uniform operation over the operating life of a thruster device.

Interpretation of transport measurements in ZnO-thin films

NASA Astrophysics Data System (ADS)

Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas

2011-01-01

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

Spontaneous magnetization and anomalous Hall effect in an emergent Dice lattice

PubMed Central

Dutta, Omjyoti; Przysiężna, Anna; Zakrzewski, Jakub

2015-01-01

Ultracold atoms in optical lattices serve as a tool to model different physical phenomena appearing originally in condensed matter. To study magnetic phenomena one needs to engineer synthetic fields as atoms are neutral. Appropriately shaped optical potentials force atoms to mimic charged particles moving in a given field. We present the realization of artificial gauge fields for the observation of anomalous Hall effect. Two species of attractively interacting ultracold fermions are considered to be trapped in a shaken two dimensional triangular lattice. A combination of interaction induced tunneling and shaking can result in an emergent Dice lattice. In such a lattice the staggered synthetic magnetic flux appears and it can be controlled with external parameters. The obtained synthetic fields are non-Abelian. Depending on the tuning of the staggered flux we can obtain either anomalous Hall effect or its quantized version. Our results are reminiscent of Anomalous Hall conductivity in spin-orbit coupled ferromagnets. PMID:26057635

Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

NASA Astrophysics Data System (ADS)

Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seed layer

NASA Astrophysics Data System (ADS)

Hu, Fang; Xu, Guizhou; You, Yurong; Zhang, Zhi; Xu, Zhan; Gong, Yuanyuan; Liu, Er; Zhang, Hongguo; Liu, Enke; Wang, Wenhong; Xu, Feng

2018-03-01

Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in antiferromagnetic spintronic devices. Herein, we report the preparation of Mn3Ga films in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on a thermally oxidized Si substrate. Large coercivity together with large anomalous Hall resistivity is found in the Ta-only sample with a mixed tetragonal phase. By increasing the thickness of the Ru layer, the tetragonal phase gradually disappears and a relatively pure hexagonal phase is obtained in the Ta(5)/Ru(30) buffered sample. Further magnetic and transport measurements revealed that the anomalous Hall conductivity nearly vanishes in the pure hexagonal sample, while an abnormal asymmetric hump structure emerges in the low field region. The extracted additional Hall term is robust in a large temperature range and presents a sign reversal above 200 K. The abnormal Hall properties are proposed to be closely related to the frustrated spin structure of D019 Mn3Ga.

The Impact of a Health Campaign on Hand Hygiene and Upper Respiratory Illness among College Students Living in Residence Halls.

ERIC Educational Resources Information Center

White, Cindy; Kolble, Robin; Carlson, Rebecca; Lipson, Natasha

2005-01-01

Hand hygiene is a key element in preventing the transmission of cold and flu viruses. The authors conducted an experimental-control design study in 4 campus residence halls to determine whether a message campaign about hand hygiene and the availability of gel hand sanitizer could decrease cold and flu illness and school and work absenteeism. Their…

Residence Hall Student Satisfaction with Interim Alcohol Policy. Office for Student Affairs Research Bulletin; v15 n4 Jul74.

ERIC Educational Resources Information Center

Seabourg, Deborah; And Others

At the beginning of the 1973-74 academic year alcohol usage was officially permitted for the first time in residence halls at the Twin Cities Campus of the University of Minnesota. To determine residents' perceptions of the effects of the change in drinking policy, interviews were conducted with 49 current dormitory residents, who had also lived…

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 − x GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

2018-04-09

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

DOE PAGES

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; ...

2018-04-09

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Photoinduced topological phase transition and spin polarization in a two-dimensional topological insulator

NASA Astrophysics Data System (ADS)

Chen, M. N.; Su, W.; Deng, M. X.; Ruan, Jiawei; Luo, W.; Shao, D. X.; Sheng, L.; Xing, D. Y.

2016-11-01

A great deal of attention has been paid to the topological phases engineered by photonics over the past few years. Here, we propose a topological quantum phase transition to a quantum anomalous Hall (QAH) phase induced by off-resonant circularly polarized light in a two-dimensional system that is initially in a quantum spin Hall phase or a trivial insulator phase. This provides an alternative method to realize the QAH effect, other than magnetic doping. The circularly polarized light effectively creates a Zeeman exchange field and a renormalized Dirac mass, which are tunable by varying the intensity of the light and drive the quantum phase transition. Both the transverse and longitudinal Hall conductivities are studied, and the former is consistent with the topological phase transition when the Fermi level lies in the band gap. A highly controllable spin-polarized longitudinal electrical current can be generated when the Fermi level is in the conduction band, which may be useful for designing topological spintronics.

Emergent Topological Phenomena in Thin Films of Pyrochlore Iridates

NASA Astrophysics Data System (ADS)

Yang, Bohm-Jung; Nagaosa, Naoto

2014-06-01

Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

Spectral sum rules and magneto-roton as emergent graviton in fractional quantum Hall effect

DOE PAGES

Golkar, Siavash; Nguyen, Dung X.; Son, Dam T.

2016-01-05

Here, we consider gapped fractional quantum Hall states on the lowest Landau level when the Coulomb energy is much smaller than the cyclotron energy. We introduce two spectral densities, ρ T(ω) andmore » $$\\bar{p}$$ T(ω), which are proportional to the probabilities of absorption of circularly polarized gravitons by the quantum Hall system. We prove three sum rules relating these spectral densities with the shift S, the q 4 coefficient of the static structure factor S 4, and the high-frequency shear modulus of the ground state μ ∞, which is precisely defined. We confirm an inequality, first suggested by Haldane, that S 4 is bounded from below by |S–1|/8. The Laughlin wavefunction saturates this bound, which we argue to imply that systems with ground state wavefunctions close to Laughlin’s absorb gravitons of predominantly one circular polarization. We consider a nonlinear model where the sum rules are saturated by a single magneto-roton mode. In this model, the magneto-roton arises from the mixing between oscillations of an internal metric and the hydrodynamic motion. Implications for experiments are briefly discussed.« less

Detection of fractional solitons in quantum spin Hall systems

NASA Astrophysics Data System (ADS)

Fleckenstein, C.; Traverso Ziani, N.; Trauzettel, B.

2018-03-01

We propose two experimental setups that allow for the implementation and the detection of fractional solitons of the Goldstone-Wilczek type. The first setup is based on two magnetic barriers at the edge of a quantum spin Hall system for generating the fractional soliton. If then a quantum point contact is created with the other edge, the linear conductance shows evidence of the fractional soliton. The second setup consists of a single magnetic barrier covering both edges and implementing a long quantum point contact. In this case, the fractional soliton can unambiguously be detected as a dip in the conductance without the need to control the magnetization of the barrier.

Two-terminal conductance fluctuations in the integer quantum Hall regime

NASA Astrophysics Data System (ADS)

Ho, Chang-Ming

1999-09-01

Motivated by recent experiments on the conductance fluctuations in mesoscopic integer quantum Hall systems, we consider a model in which the Coulomb interactions are incorporated into the picture of edge-state transport through a single saddle point. The occupancies of classical localized states in the two-dimensional electron system change due to the interactions between electrons when the gate voltage on top of the device is varied. The electrostatic potential between the localized states and the saddle point causes fluctuations of the saddle-point potential and thus fluctuations of the transmission probability of edge states. This simple model is studied numerically and compared with the observation.

Topological aspect and the pairing symmetries on spin-triplet chiral p-wave superconductor under strain

NASA Astrophysics Data System (ADS)

Imai, Yoshiki; Sigrist, Manfred

2018-05-01

Motivated by recent experiments on Sr2RuO4, the effect of uniaxial strain on the chiral p-wave superconductor is discussed. We study particularly the relation between the topological indices and different pairing states in the superconducting phase through the thermal Hall conductivity, which is proportional to temperature and the Chern number in the very low-temperature limit. We show that the temperature-dependence of the thermal Hall conductivity under uniaxial strain depends strongly on the form of the pairing state. The obtained result may provide a possible experimental probe for the pairing structure in Sr2RuO4.

Surface conductance of graphene from non-contact resonant cavity.

PubMed

Obrzut, Jan; Emiroglu, Caglar; Kirillov, Oleg; Yang, Yanfei; Elmquist, Randolph E

2016-06-01

A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. The measurements are made in an air filled standard R100 rectangular waveguide configuration at one of the resonant frequency modes, typically at TE 103 mode of 7.4543 GHz. Surface conductance measurement involves monitoring a change in the quality factor of the cavity as the specimen is progressively inserted into the cavity in quantitative correlation with the specimen surface area. The specimen consists of a nano-carbon-layer supported on a low loss dielectric substrate. The thickness of the conducting nano-carbon layer does not need to be explicitly known, but it is assumed that the lateral dimension is uniform over the specimen area. The non-contact surface conductance measurements are illustrated for a typical graphene grown by chemical vapor deposition process, and for a high quality monolayer epitaxial graphene grown on silicon carbide wafers for which we performed non-gated quantum Hall resistance measurements. The sequence of quantized transverse Hall resistance at the Landau filling factors ν = ±6 and ±2, and the absence of the Hall plateau at ν = 4 indicate that the epitaxially grown graphene is a high quality mono-layer. The resonant microwave cavity measurement is sensitive to the surface and bulk conductivity, and since no additional processing is required, it preserves the integrity of the conductive graphene layer. It allows characterization with high speed, precision and efficiency, compared to transport measurements where sample contacts must be defined and applied in multiple processing steps.

Tutorial: Physics and modeling of Hall thrusters

NASA Astrophysics Data System (ADS)

Boeuf, Jean-Pierre

2017-01-01

Hall thrusters are very efficient and competitive electric propulsion devices for satellites and are currently in use in a number of telecommunications and government spacecraft. Their power spans from 100 W to 20 kW, with thrust between a few mN and 1 N and specific impulse values between 1000 and 3000 s. The basic idea of Hall thrusters consists in generating a large local electric field in a plasma by using a transverse magnetic field to reduce the electron conductivity. This electric field can extract positive ions from the plasma and accelerate them to high velocity without extracting grids, providing the thrust. These principles are simple in appearance but the physics of Hall thrusters is very intricate and non-linear because of the complex electron transport across the magnetic field and its coupling with the electric field and the neutral atom density. This paper describes the basic physics of Hall thrusters and gives a (non-exhaustive) summary of the research efforts that have been devoted to the modelling and understanding of these devices in the last 20 years. Although the predictive capabilities of the models are still not sufficient for a full computer aided design of Hall thrusters, significant progress has been made in the qualitative and quantitative understanding of these devices.

Thermal and electric properties of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y)

NASA Technical Reports Server (NTRS)

Lim, Z. S.; Han, K. H.; Lee, Sung-Ik; Jeong, Yoon H.; Song, Y. S.; Park, Y. W.

1990-01-01

Electric resistivity, magnetic susceptibility, thermoelectric power, and Hall coefficient of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) whose onset temperature of the superconductivity are 24 K and 23 K were measured. Experimental results show many interesting features. In particular, the Hall coefficients are negative and relatively flat as a function of temperature. However, the temperature dependence of the thermoelectric power (TEP) for these two samples shows the positive sign for both samples in contrast to the previous results. Moreover TEP for both samples remains flat in the normal state below 250 K, but decreases rapidly above 250 K. TEP of only Pr(1.85)Ce(0.15)CuO(4-y) shows a peak near 50 K. Finally onset temperatures of sudden drop of TEP are higher than those of resistance drop. The physical properties of these samples produced at different conditions such as different heat treatment temperatures, atmospheres were also measured. TEP and resistance measurement show that oxygen deficiency is essential to produce better superconducting samples. Correlation between TEP and superconductivity for these different samples will be discussed.

Thermal and electric properties of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y)

NASA Technical Reports Server (NTRS)

Lim, Z. S.; Han, K. H.; Lee, Sung-Ik; Jeong, Yoon H.; Song, Y. S.; Park, Y. W.

1991-01-01

Electric resistivity, magnetic susceptibility, thermoelectric power, and Hall coefficient of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) whose onset temperature of the superconductivity are 24 and 23 K were measured. Experimental results show many interesting features. In particular, the Hall coefficients are negative and relatively flat as a function of temperature. However, the temperature dependence of the thermoelectric power (TEP) for these two samples shows the positive sign for both samples in contrast to the previous results. Moreover, TEP for both samples remains flat in the normal state below 250 K, but decreases rapidly above 250 K. TEP of only Pr(1.85)Ce(0.15)CuO(4-y) shows a peak near 50 K. Finally, onset temperatures of sudden drop of TEP are higher than those of resistance drop. The physical properties of these samples produced at different conditions such as different heat treatment temperatures, atmospheres were also measured. TEP and resistance measurement show that oxygen deficiency is essential to produce better superconducting samples. Correlation between TEP and superconductivity for these different samples are discussed.

Interlayer tunneling in double-layer quantum hall pseudoferromagnets.

PubMed

Balents, L; Radzihovsky, L

2001-02-26

We show that the interlayer tunneling I-V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder, and thermal lengths. For weak tunneling, we predict a negative differential conductance of a power-law shape crossing over to a sharp zero-bias peak. An in-plane magnetic field splits this zero-bias peak, leading instead to a "derivative" feature at V(B)(B(parallel)) = 2 pi Planck's over 2 pi upsilon B(parallel)d/e phi(0), which gives a direct measurement of the dispersion of the Goldstone mode corresponding to the spontaneous symmetry breaking of the double-layer Hall state.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamann, Danielle M.; Lygo, Alexander C.; Esters, Marco

Single- and few-layer metal chalcogenide compounds are of significant interest due to structural changes and emergent electronic properties on reducing dimensionality from three to two dimensions. To explore dimensionality effects in SnSe, a series of [(SnSe) 1+δ] mTiSe 2 intergrowth structures with increasing SnSe layer thickness (m = 1-4) were prepared from designed thin-film precursors. In-plane diffraction patterns indicated that significant structural changes occurred in the basal plane of the SnSe constituent as m is increased. Scanning transmission electron microscopy cross-sectional images of the m = 1 compound indicate long-range coherence between layers, whereas the m >/= 2 compounds showmore » extensive rotational disorder between the constituent layers. For m >/= 2, the images of the SnSe constituent contain a variety of stacking sequences of SnSe bilayers. Density functional theory calculations suggest that the formation energy is similar for several different SnSe stacking sequences. The compounds show unexpected transport properties as m is increased, including the first p-type behavior observed in (MSe)m(TiSe 2) n compounds. The resistivity of the m >/- 2 compounds is larger than for m = 1, with m = 2 being the largest. At room temperature, the Hall coefficient is positive for m = 1 and negative for m = 2-4. The Hall coefficient of the m = 2 compound changes sign as temperature is decreased. The room-temperature Seebeck coefficient, however, switches from negative to positive at m = 3. These properties are incompatible with single band transport indicating that the compounds are not simple composites.« less

Transport properties of β-FeSi2

NASA Astrophysics Data System (ADS)

Arushanov, Ernest; Lisunov, Konstantin G.

2015-07-01

The aim of this paper is to summarize considerable experimental efforts undertaken within the last decades in the investigations of transport properties of β-FeSi2. The β-FeSi2 compound is the most investigated among a family of semiconducting silicides. This material has received considerable attention as an attractive material for optoelectronic, photonics, photovoltaics and thermoelectric applications. Previous reviews of the transport properties of β-FeSi2 have been given by Lange and Ivanenko et al. about 15 years ago. The Hall effect, the conductivity, the mobility and the magnetoresistance data are presented. Main attention is paid to the discussion of the impurity (defect) band conductivity, the anomalous Hall effect, the scattering mechanisms of charge carriers, as well as to the hopping conduction and the magnetoresistance.

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jun Sung; Seo, Sung Seok A; Chisholm, Matthew F

2010-01-01

We report magnetotransport properties of heterointerfaces between the Mott insulator LaTiO{sub 3} and the band insulator SrTiO{sub 3} in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO{sub 3} at low temperatures and its electric fieldmore » dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.« less

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

PubMed

Chen, Kaixiang; Zhao, Xiaolong; Mesli, Abdelmadjid; He, Yongning; Dan, Yaping

2018-04-24

Photoconductors have extraordinarily high gain in quantum efficiency, but the origin of the gain has remained in dispute for decades. In this work, we employ photo Hall effect to reveal the gain mechanisms by probing the dynamics of photogenerated charge carriers in silicon nanowire photoconductors. The results reveal that a large number of photogenerated minority electrons are localized in the surface depletion region and surface trap states. The same number of excess hole counterparts is left in the nanowire conduction channel, resulting in the fact that excess holes outnumber the excess electrons in the nanowire conduction channel by orders of magnitude. The accumulation of the excess holes broadens the conduction channel by narrowing down the depletion region, which leads to the experimentally observed high photo gain.

The thermopower in the temperature range T(sub c)-1000K and the bank spectrum of Bi-based superconductors

NASA Technical Reports Server (NTRS)

Gasumyants, V. E.; Vladimirskaya, E. V.; Smirnov, V. I.; Kazanskiy, S. V.

1995-01-01

The temperature dependencies of thermopower, S, in the range T = T(sub c)-1000K as well as of resistivity and Hall coefficient in the range T = T(sub c)-300K for the single-phase ceramic samples Bi2Sr2Ca(1-x)Nd(x)Cu2O(y) have been measured. It was found that the S(T) dependencies in normal phase have three characteristic regions. Despite the fact that the S(T) dependencies in Bi-based high-T(sub c) superconductors (HTSC) differ essentially from ones in Y-based HTSC at T = T(sub c)-300K, the main feature of theirs (S(T) = const at high temperatures) retains in samples investigated at T is greater than 620K. The results obtained have been analyzed on the basis of the narrow-band model with the use of assumption of slight asymmetry of the conductive band. The band spectrum parameters of the samples studied have been calculated. An analysis of the tendencies in these parameters changes with samples composition varying enables to make the conclusion about the similarity of the main features of the conductive band structure in Y- and Bi-based HTSC.

Thermoelectric properties of hole-doped SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Ferreiro-Vila, Elias; Sarantopoulos, Alexandros; Leboran, Victor; Bui, Cong-Tinh; Rivadulla, Francisco; Condense matter Chemistry Group Team

2014-03-01

Two dimensional conductors are expected to show an improved thermoelectric performance due the positive effect of quantum confinement on the thermoelectric power, and the decrease of thermal conductivity by interface boundary scattering. The recent report of a large increase of the thermoelectric power in quantum wells of Nb-doped SrTiO3 (STO) seems to be in agreement with this hypothesis. However, extrinsic effects like the existence of oxygen vacancies that propagate away from the interface cannot be ruled out, and the results are far from clear. Here we will show the thermoelectric properties (electrical conductivity, Seebeck coefficient, and Hall effect), of epitaxial thin-films of (La,Nb)-doped STO. The films have been deposited by PLD on different substrates (STO, LAO...) to study the effect of tensile/compressive stress on the thermoelectric properties of the system. The oxygen pressure during the deposition was carefully controlled to tune the amount of oxygen vacancies and to compare with the cation doping. We have performed a systematic study of the transport properties as a function of thickness and doping, which along with the effect of stress, allows to understand the effect of charge density and dimensionality in an oxide system with promising thermoelectric properties.

Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1998-01-01

New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.

Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2

NASA Astrophysics Data System (ADS)

Takahashi, H.; Okazaki, R.; Yasui, Y.; Terasaki, I.

2011-11-01

We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a large Seebeck coefficient was observed. By applying a two-carrier model, we find that the carrier concentration decreases from 1 down to 10-4 ppm/unit cell and the mobility increases from 2000 to 28 000 cm2/Vs with decreasing temperature from 30 down to 4 K. At lower temperatures, the magnetoresistive behavior drastically changes and a negative magnetoresistance is observed at 3 K. These low-temperature behaviors are reminiscent of the low-temperature magnetotransport observed in doped semiconductors such as As-doped Ge, which is well described by a weak-localization picture. We argue a detailed electronic structure in FeSb2 inferred from our observations.

Central charge from adiabatic transport of cusp singularities in the quantum Hall effect

NASA Astrophysics Data System (ADS)

Can, Tankut

2017-04-01

We study quantum Hall (QH) states on a punctured Riemann sphere. We compute the Berry curvature under adiabatic motion in the moduli space in the large N limit. The Berry curvature is shown to be finite in the large N limit and controlled by the conformal dimension of the cusp singularity, a local property of the mean density. Utilizing exact sum rules obtained from a Ward identity, we show that for the Laughlin wave function, the dimension of a cusp singularity is given by the central charge, a robust geometric response coefficient in the QHE. Thus, adiabatic transport of curvature singularities can be used to determine the central charge of QH states. We also consider the effects of threaded fluxes and spin-deformed wave functions. Finally, we give a closed expression for all moments of the mean density in the integer QH state on a punctured disk.

Spinor formulation of topologically massive gravity

NASA Astrophysics Data System (ADS)

Aliev, A. N.; Nutku, Y.

1995-12-01

In the framework of real 2-component spinors in three dimensional space-time we present a description of topologically massive gravity (TMG) in terms of differential forms with triad scalar coefficients. This is essentially a real version of the Newman-Penrose formalism in general relativity. A triad formulation of TMG was considered earlier by Hall, Morgan and Perjes, however, due to an unfortunate choice of signature some of the spinors underlying the Hall-Morgan-Perjes formalism are real, while others are pure imaginary. We obtain the basic geometrical identities as well as the TMG field equations including a cosmological constant for the appropriate signature. As an application of this formalism we discuss the Bianchi Type $VIII - IX$ exact solutions of TMG and point out that they are parallelizable manifolds. We also consider various re-identifications of these homogeneous spaces that result in black hole solutions of TMG.

Modeling an Iodine Hall Thruster Plume in the Iodine Satellite (ISAT)

NASA Technical Reports Server (NTRS)

Choi, Maria

2016-01-01

An iodine-operated 200-W Hall thruster plume has been simulated using a hybrid-PIC model to predict the spacecraft surface-plume interaction for spacecraft integration purposes. For validation of the model, the plasma potential, electron temperature, ion current flux, and ion number density of xenon propellant were compared with available measurement data at the nominal operating condition. To simulate iodine plasma, various collision cross sections were found and used in the model. While time-varying atomic iodine species (i.e., I, I+, I2+) information is provided by HPHall simulation at the discharge channel exit, the molecular iodine species (i.e., I2, I2+) are introduced as Maxwellian particles at the channel exit. Simulation results show that xenon and iodine plasma plumes appear to be very similar under the assumptions of the model. Assuming a sticking coefficient of unity, iodine deposition rate is estimated.

Thermoelectric properties, Shubnikov-de Haas effect and mobility of charge carriers in bismuth antimony tellurides and selenides and nanocomposite based on these materials

NASA Astrophysics Data System (ADS)

Kulbachinskii, V. A.; Kytin, V. G.; Kudryashov, A. A.; Lunin, R. A.; Banerjee, A.

2017-04-01

We describe here the study of the Shubnikov-de Haas effect and thermoelectric properties of p-(Bi0.5Sb0.5)2Te3 single crystals doped with Ga, n-Bi2-xTlxSe3 and p-Sb2-xTlxTe3. Using Fourier spectra of the oscillations we calculated the mobility of charge carriers and its variation upon doping. We found that Ga has a donor effect in p-(Bi0.5Sb0.5)2Te3, Tl is an acceptor in n-Bi2-xTlxSe3 and increases the mobility of electrons, while in p-Sb2-xTlxTe3, Tl is a donor and decreases the mobility of holes. We consider the evolution of the defectiveness of crystals that leads to the observed effects. We also synthesized and investigated nanocomposites of solid solutions Sb2Te3-xSex (0 < x < 1). When Se concentration increases in Sb2Te3-xSex, the concentration of holes decreases. At the same time the Seebeck coefficient decreases. This is not typical for semiconductors but correlates with the earlier data. A theoretical model was developed to calculate simultaneously the dependences of the Seebeck coefficient, Hall coefficient and conductivity on the selenium concentration x. Calculations showed that for a simultaneous quantitative description of the thermoelectric and galvanomagnetic data it is necessary to take into consideration both the evolution of the band structure of Sb2Te3-xSex and partial localization of holes.

Pressure effect in cuprates - manifestation of Le Chatelier's principle

NASA Astrophysics Data System (ADS)

Kallio, A.; Bräysy, V.; Hissa, J.

We show that the pressure dependence of Tc, the Hall coefficient scaling, resistivities etc. can be explained by the chemical equilibrium of bosons and their decay products the fermions applying essentially the classical theory. Above a temperature TBL the bosons form a lattice, which causes diffusion term in τab-1. Treatment of equilibrium in a magnetic field explains the dependence of quantities like the penetration depth λab uponm the field.

Graphene Plasmonics for Tunable Terahertz Metamaterials

DTIC Science & Technology

2011-10-01

anomalous quantumHall effect15,16 andKlein tunnelling17,18 in electrical transport to a universal absorption constant19,20 and tunable interband ...electron scattering spectroscopy25,26 and inelastic scanning tunnelling microscopy27. However, the fundamental behaviour of light–plasmon coupling in...ribbon arrays. Here TCNP is the transmission coefficient at CNP and DT¼ T2 TCNP. The 2DT/TCNP spectra of a gated 4 mm sample (Vg¼22.0 V) for terahertz

Magnetic field mediated conductance oscillation in graphene p–n junctions

NASA Astrophysics Data System (ADS)

Cheng, Shu-Guang

2018-04-01

The electronic transport of graphene p–n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus magnetic field shows a Shubnikov–de Haas oscillation. At higher magnetic field, the p–n junction subjected to the quasi-classical regime and the formation of snake states results in periodical backscattering and transmission as magnetic field varies. The conductance oscillation pattern is mediated both by magnetic field and the carrier concentration on bipolar regions. For medium magnetic field between above two regimes, the combined contributions of resonant tunneling, snake states oscillation and Aharanov–Bohm interference induce irregular oscillation of conductance. At very high magnetic field, the system is subjected to quantum Hall regime. Under disorder, the quantum tunneling at low magnetic field is slightly affected and the oscillation of snake states at higher magnetic field is suppressed. In the quantum Hall regime, the conductance is a constant as predicted by the mixture rule.

Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

DOE PAGES

Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David; ...

2018-03-29

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

Magnetic phase dependence of the anomalous Hall effect in Mn3Sn single crystals

NASA Astrophysics Data System (ADS)

Sung, N. H.; Ronning, F.; Thompson, J. D.; Bauer, E. D.

2018-03-01

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T1 = 275 K and T2 = 200 K, below the antiferromagnetic phase transition at TN ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω-1 cm-1 to near zero below T1, coincident with the vanishing of the weak ferromagnetic moment. This illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched on and off by a subtle change in the symmetry of the magnetic structure near room temperature.

Hidden-Symmetry-Protected Topological Semimetals on a Square Lattice

NASA Astrophysics Data System (ADS)

Hou, Jing-Min

2013-09-01

We study a two-dimensional fermionic square lattice, which supports the existence of a two-dimensional Weyl semimetal, quantum anomalous Hall effect, and 2π-flux topological semimetal in different parameter ranges. We show that the band degenerate points of the two-dimensional Weyl semimetal and 2π-flux topological semimetal are protected by two distinct novel hidden symmetries, which both correspond to antiunitary composite operations. When these hidden symmetries are broken, a gap opens between the conduction and valence bands, turning the system into a insulator. With appropriate parameters, a quantum anomalous Hall effect emerges. The degenerate point at the boundary between the quantum anomalous Hall insulator and trivial band insulator is also protected by the hidden symmetry.

Semiclassical magnetotransport in strongly spin-orbit coupled Rashba two-dimensional electron systems.

PubMed

Xiao, Cong; Li, Dingping

2016-06-15

Semiclassical magnetoelectric and magnetothermoelectric transport in strongly spin-orbit coupled Rashba two-dimensional electron systems is investigated. In the presence of a perpendicular classically weak magnetic field and short-range impurity scattering, we solve the linearized Boltzmann equation self-consistently. Using the solution, it is found that when Fermi energy E F locates below the band crossing point (BCP), the Hall coefficient is a nonmonotonic function of electron density n e and not inversely proportional to n e. While the magnetoresistance (MR) and Nernst coefficient vanish when E F locates above the BCP, non-zero MR and enhanced Nernst coefficient emerge when E F decreases below the BCP. Both of them are nonmonotonic functions of E F below the BCP. The different semiclassical magnetotransport behaviors between the two sides of the BCP can be helpful to experimental identifications of the band valley regime and topological change of Fermi surface in considered systems.

Semiclassical magnetotransport in strongly spin-orbit coupled Rashba two-dimensional electron systems

NASA Astrophysics Data System (ADS)

Xiao, Cong; Li, Dingping

2016-06-01

Semiclassical magnetoelectric and magnetothermoelectric transport in strongly spin-orbit coupled Rashba two-dimensional electron systems is investigated. In the presence of a perpendicular classically weak magnetic field and short-range impurity scattering, we solve the linearized Boltzmann equation self-consistently. Using the solution, it is found that when Fermi energy E F locates below the band crossing point (BCP), the Hall coefficient is a nonmonotonic function of electron density n e and not inversely proportional to n e. While the magnetoresistance (MR) and Nernst coefficient vanish when E F locates above the BCP, non-zero MR and enhanced Nernst coefficient emerge when E F decreases below the BCP. Both of them are nonmonotonic functions of E F below the BCP. The different semiclassical magnetotransport behaviors between the two sides of the BCP can be helpful to experimental identifications of the band valley regime and topological change of Fermi surface in considered systems.

Stability of coefficients in the Kronecker product of a hook and a rectangle

NASA Astrophysics Data System (ADS)

Ballantine, Cristina M.; Hallahan, William T.

2016-02-01

We use recent work of Jonah Blasiak (2012 arXiv:1209.2018) to prove a stability result for the coefficients in the Kronecker product of two Schur functions: one indexed by a hook partition and one indexed by a rectangle partition. We also give nearly sharp bounds for the size of the partition starting with which the Kronecker coefficients are stable. Moreover, we show that once the bound is reached, no new Schur functions appear in the decomposition of Kronecker product. We call this property superstability. Thus, one can recover the Schur decomposition of the Kronecker product from the smallest case in which the superstability holds. The bound for superstability is sharp. Our study of this particular case of the Kronecker product is motivated by its usefulness for the understanding of the quantum Hall effect (Scharf T et al 1994 J. Phys. A: Math. Gen 27 4211-9).

Superconducting quantum spin-Hall systems with giant orbital g-factors

NASA Astrophysics Data System (ADS)

Hankiewicz, Ewelina; Reinthaler, Rolf; Tkachov, Grigory

Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. Here, we describe a novel superconducting quantum spin-Hall effect (quantum spin Hall system in the proximity to the s-wave superconductor and in the orbital in-plane magnetic field), which is protected against elastic backscattering by combined time-reversal and particle-hole symmetry. This effect is characterized by spin-polarized edge states, which can be manipulated in weak magnetic fields due to a giant effective orbital g-factor, allowing the generation of spin currents. The phenomenon provides a novel solution to the outstanding challenge of detecting the spin-polarization of the edge states. Here we propose the detection of the edge polarization in the three-terminal junction using unusual transport properties of superconducting quantum Hall-effect: a non-monotonic excess current and a zero-bias conductance splitting. We thank for the financial support the German Science Foundation (DFG), Grants No HA 5893/4-1 within SPP 1666, HA5893/5-2 within FOR1162 and TK60/1-1 (G.T.), as well the ENB graduate school ``Topological insulators''.

Hall viscosity and geometric response in the Chern-Simons matrix model of the Laughlin states

NASA Astrophysics Data System (ADS)

Lapa, Matthew F.; Hughes, Taylor L.

2018-05-01

We study geometric aspects of the Laughlin fractional quantum Hall (FQH) states using a description of these states in terms of a matrix quantum mechanics model known as the Chern-Simons matrix model (CSMM). This model was proposed by Polychronakos as a regularization of the noncommutative Chern-Simons theory description of the Laughlin states proposed earlier by Susskind. Both models can be understood as describing the electrons in a FQH state as forming a noncommutative fluid, i.e., a fluid occupying a noncommutative space. Here, we revisit the CSMM in light of recent work on geometric response in the FQH effect, with the goal of determining whether the CSMM captures this aspect of the physics of the Laughlin states. For this model, we compute the Hall viscosity, Hall conductance in a nonuniform electric field, and the Hall viscosity in the presence of anisotropy (or intrinsic geometry). Our calculations show that the CSMM captures the guiding center contribution to the known values of these quantities in the Laughlin states, but lacks the Landau orbit contribution. The interesting correlations in a Laughlin state are contained entirely in the guiding center part of the state/wave function, and so we conclude that the CSMM accurately describes the most important aspects of the physics of the Laughlin FQH states, including the Hall viscosity and other geometric properties of these states, which are of current interest.

Spin Funneling for Enhanced Spin Injection into Ferromagnets

PubMed Central

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-01-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory. PMID:27374496

Metal-to-insulator switching in quantum anomalous Hall states

DOE PAGES

Kou, Xufeng; Pan, Lei; Wang, Jing; ...

2015-10-07

After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr 0.12Bi 0.26Sb 0.62) 2Te 3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phasemore » diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.« less

Spin Funneling for Enhanced Spin Injection into Ferromagnets

NASA Astrophysics Data System (ADS)

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-07-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory.

Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diniz, G. S., E-mail: ginetom@gmail.com; Guassi, M. R.; Qu, F.

2013-12-28

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of themore » exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.« less

Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect

DOE PAGES

Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; ...

2015-11-06

We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/Y 3Fe 5O 12 (YIG) bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc currentmore » through the inverse spin Hall effect. The voltage is measured with applied magnetic field directions that range in-plane to nearly perpendicular. In conclusion, we find that for magnetic fields that are mostly out-of-plane, an imaginary component of the spin mixing conductance is required to model our data.« less

Determination of the spin Hall angle in single-crystalline Pt films from spin pumping experiments

NASA Astrophysics Data System (ADS)

Keller, Sascha; Mihalceanu, Laura; Schweizer, Matthias R.; Lang, Philipp; Heinz, Björn; Geilen, Moritz; Brächer, Thomas; Pirro, Philipp; Meyer, Thomas; Conca, Andres; Karfaridis, Dimitrios; Vourlias, George; Kehagias, Thomas; Hillebrands, Burkard; Papaioannou, Evangelos Th

2018-05-01

We report on the determination of the spin Hall angle in ultra-clean, defect-reduced epitaxial Pt films. By applying vector network analyzer ferromagnetic resonance spectroscopy to a series of single crystalline Fe (12 nm) /Pt (t Pt) bilayers we determine the real part of the spin mixing conductance (4.4 ± 0.2) × 1019 m‑2 and reveal a very small spin diffusion length in the epitaxial Pt (1.1 ± 0.1) nm film. We investigate the spin pumping and ISHE in a stripe microstucture excited by a microwave coplanar waveguide antenna. By using their different angular dependencies, we distinguish between spin rectification effects and the inverse spin Hall effect. The relatively large value of the spin Hall angle (5.7 ± 1.4)% shows that ultra-clean e-beam evaporated non-magnetic materials can also have a comparable spin-to-charge current conversion efficiency as sputtered high resistivity layers.

Theoretical study of spin Hall effect in conjugated Organic semiconductors

NASA Astrophysics Data System (ADS)

Mahani, M. R.; Delin, A.

The spin Hall effect (SHE), a direct conversion between electronic and spin currents, is a rapidly growing branch of spintronics. The study of SHE in conjugated polymers has gained momentum recently due to the weak spin-orbit couplings and hyperfine interactions in these materials. Our calculations of SHE based on the recent work, are the result of the misalignment of pi-orbitals in triads consisting of three molecules. In disordered organics, where the electronic conduction is through hopping of the electrons among randomly oriented molecules, instead of identifying a hopping triad to represent the entire system, we numerically solve the master equations for electrical and spin hall conductivities by summing the contributions from all triads in a sufficiently large system. The interference between the direct and indirect hoppings in these triads leads to SHE proportional to the orientation vector of molecule at the first order of spin-orbit coupling. Hence, our results show, the degree of molecular alignment as well as the strength of the spin-orbit coupling can be used to control the SHE in organics.

Effect of equal-channel angular pressing and annealing conditions on the texture, microstructure, and deformability of an MA2-1 alloy

NASA Astrophysics Data System (ADS)

Serebryany, V. N.; Ivanova, T. M.; Kopylov, V. I.; Dobatkin, S. V.; Pozdnyakova, N. N.; Pimenov, V. A.; Savelova, T. I.

2010-07-01

Equal-channel angular pressing (ECAP) of am MA2-1 alloy according to routes A and Bc is used to study the possibility of increasing the low-temperature deformability of the alloy due to grain refinement and a change in its texture. To separate the grain refinement effect from the effect of texture on the deformability of the alloy, samples after ECAP are subjected to recrystallization annealing that provides grain growth to the grain size characteristic of the initial state (IS) of the alloy. Upon ECAP, the average grain size is found to decrease to 2-2.4 μm and the initial sharp axial texture changes substantially (it decomposes into several scattered orientations). The type of orientations and the degree of their scattering depend on the type of ECAP routes. The detected change in the texture is accompanied by an increase in the deformability parameters (normal plastic anisotropy coefficient R, strain-hardening exponent n, relative uniform elongation δu) determined upon tensile tests at 20°C for the states of the alloy formed in the IS-4A-4Bc and IS-4Ao-4BcO sequences. The experimental values of R agree with the values calculated in terms of the Taylor model of plastic deformation in the Bishop-Hill approximation using quantitative texture data in the form of orientation distribution function coefficients with allowance for the activation of prismatic slip, especially for ECAP routes 4Bc and 4BcO. When the simulation results, the Hall-Petch relation, and the generalized Schmid factors are taken into account, a correlation is detected between the deformability parameter, the Hall-Petch coefficient, and the ratio of the critical shear stresses on prismatic and basal planes.

Structural Changes as a Function of Thickness in [(SnSe) 1+δ ] m TiSe 2 Heterostructures

DOE PAGES

Hamann, Danielle M.; Lygo, Alexander C.; Esters, Marco; ...

2018-01-31

Single- and few-layer metal chalcogenide compounds are of significant interest due to structural changes and emergent electronic properties on reducing dimensionality from three to two dimensions. To explore dimensionality effects in SnSe, a series of [(SnSe) 1+δ] mTiSe 2 intergrowth structures with increasing SnSe layer thickness (m = 1-4) were prepared from designed thin-film precursors. In-plane diffraction patterns indicated that significant structural changes occurred in the basal plane of the SnSe constituent as m is increased. Scanning transmission electron microscopy cross-sectional images of the m = 1 compound indicate long-range coherence between layers, whereas the m >/= 2 compounds showmore » extensive rotational disorder between the constituent layers. For m >/= 2, the images of the SnSe constituent contain a variety of stacking sequences of SnSe bilayers. Density functional theory calculations suggest that the formation energy is similar for several different SnSe stacking sequences. The compounds show unexpected transport properties as m is increased, including the first p-type behavior observed in (MSe)m(TiSe 2) n compounds. The resistivity of the m >/- 2 compounds is larger than for m = 1, with m = 2 being the largest. At room temperature, the Hall coefficient is positive for m = 1 and negative for m = 2-4. The Hall coefficient of the m = 2 compound changes sign as temperature is decreased. The room-temperature Seebeck coefficient, however, switches from negative to positive at m = 3. These properties are incompatible with single band transport indicating that the compounds are not simple composites.« less

Relation of planar Hall and planar Nernst effects in thin film permalloy

NASA Astrophysics Data System (ADS)

Wesenberg, D.; Hojem, A.; Bennet, R. K.; Zink, B. L.

2018-06-01

We present measurements of the planar Nernst effect (PNE) and the planar Hall effect (PHE) of nickel-iron (Ni–Fe) alloy thin films. We suspend the thin-film samples, measurement leads, and lithographically-defined heaters and thermometers on silicon-nitride membranes to greatly simplify control and measurement of thermal gradients essential to quantitative determination of magnetothermoelectric effects. Since these thermal isolation structures allow measurements of longitudinal thermopower, or the Seebeck coefficient, and four-wire electrical resistivity of the same thin film, we can quantitatively demonstrate the link between the longitudinal and transverse effects as a function of applied in-plane field and angle. Finite element thermal analysis of this essentially 2D structure allows more confident determination of the thermal gradient, which is reduced from the simplest assumptions due to the particular geometry of the membranes, which are more than 350 μm wide in order to maximize sensitivity to transverse thermoelectric effects. The resulting maximum values of the PNE and PHE coefficients for the Ni–Fe film with 80% Ni we study here are and , respectively. All signals are exclusively symmetry with applied field, ruling out long-distance spin transport effects. We also consider a Mott-like relation between the PNE and PHE, and use both this and the standard Mott relation to determine the energy-derivative of the resistivity at the Fermi energy to be , which is very similar to values for films we previously measured using similar thermal platforms. Finally, using an estimated value for the lead contribution to the longitudinal thermopower, we show that the anisotropic magnetoresistance (AMR) ratio in this Ni–Fe film is two times larger than the magnetothermopower ratio, which is the first evidence of a deviation from strict adherence to the Mott relation between Seebeck coefficient and resistivity.

Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

NASA Astrophysics Data System (ADS)

Singh, Baljinder; Singh, Janpreet; Kaur, Jagdish; Moudgil, R. K.; Tripathi, S. K.

2016-06-01

Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

A First-Principles Analytical Theory for 2D Magnetic Reconnection in Electron and Hall Magnetohydrodynamics

NASA Astrophysics Data System (ADS)

Chacon, L.; Simakov, A. N.; Zocco, A.

2007-12-01

Although the relevance of two-fluid effects in fast magnetic reconnection is well-known, (J. Birn et al., J. Geophys. Res., 106 (A3), 3715 (2001) a first-principles theory -- akin to Sweet and Parker's in resistive MHD -- has been elusive. Here, we present such a first principles steady-state analytical theory for electron MHD, (L. Chacón, A. N. Simakov, A. Zocco, Phys. Rev. Lett., submitted) and its extension to Hall MHD. (A. N. Simakov, L. Chacón, in preparation) The theory discretizes the extended MHD equations at the reconnection site, leading to a set of time-dependent ODEs. Their steady-state analysis, which describes the system at or around the point of maximum reconnection rate, provides predictions for the scaling of relevant quantities with the dissipation coefficients (e.g, resistivity and hyper-resistivity) and other relevant parameters. In particular, we will show that EMHD admits both elongated and open-X point configurations of the reconnection region, and that the reconnection rate can be shown not to scale explicitly with the dissipation parameters. This result is, to our knowledge, the first analytical confirmation of the possibility of fast magnetic reconnection in EMHD. In Hall MHD, the transition between resistive MHD and EMHD is studied, and scalings with the ion inertial length are obtained.

Magnetically-related properties of bismuth containing high Tc superconductors

NASA Astrophysics Data System (ADS)

Vezzoli, Gary C.; Chen, M. F.; Craver, F.; Safari, A.; Moon, B. M.; Lalevic, B.; Burke, Terence; Shoga, M.

1990-08-01

The effect of magnetic fields to 15 T on electrical resistance has been measured for the BiSrCaCuO superconductor at precise temperatures during the transition to the superconducting state from pre-onset conditions to essentially zero resistance conditions. The results show that the temperature at which the magnetic field causes a divergence in the resistance versus 1000/ T curve is approximately the same temperature as the value at which, during cooling, the positive Hall coefficient begins its abrupt descent to zero. This temperature gives the best measure of Tc. It is also shown that small oscillations of low frequency start near onset conditions, the amplitude of which at a given temperature is B-field dependent. Additionally, Hall effect studies as a function of temperature at 4 T in three separate experiments (including high Tc BiSrCaCu PbO of > 90% theoretical density) show that sharp delta-function-like peaks in + RH are observed near Tc and are superimposed on a broader maximum. The Hall data are explicable in terms of exciton formation and ionization. The bound holes associated with these excitons are believed to be the mediators producing Cooper-pairing, and scale very well with Tc for all the known high Tc oxides.

Magnetotransport properties of microstructured AlCu2Mn Heusler alloy thin films in the amorphous and crystalline phase

NASA Astrophysics Data System (ADS)

Barzola-Quiquia, José; Stiller, Markus; Esquinazi, Pablo D.; Quispe-Marcatoma, Justiniano; Häussler, Peter

2018-06-01

We have studied the resistance, magnetoresistance and Hall effect of AlCu2Mn Heusler alloy thin films prepared by flash evaporation on substrates cooled at 4He liquid temperature. The as-prepared samples were amorphous and were annealed stepwise to induce the transformation to the crystalline phase. The amorphous phase is metastable up to above room temperature and the transition to the crystalline phase was observed by means of resistance measurements. Using transmission electron microscopy, we have determined the structure factor S (K) and the pair correlation function g (r) , both results indicate that amorphous AlCu2Mn is an electronic stabilized phase. The X-ray diffraction of the crystallized film shows peaks corresponding to the well ordered L21 phase. The resistance shows a negative temperature coefficient in both phases. The magnetoresistance (MR) is negative in both phases, yet larger in the crystalline state compared to the amorphous one. The magnetic properties were studied further by anomalous Hall effect measurements, which were present in both phases. In the amorphous state, the anomalous Hall effect disappears at temperatures below 175 K and is present up to above room temperature in the case of crystalline AlCu2Mn.

A first-principles analytical theory for 2D magnetic reconnection in electron and Hall MHD.

NASA Astrophysics Data System (ADS)

Zocco, A.; Simakov, A. N.; Chacon, L.

2007-11-01

While the relevance of two-fluid effects in fast magnetic reconnection is well-known,ootnotetextJ. Birn et al., J. Geophys. Res., 106 (A3), pp. 3715--3719 (2001) a first-principles theory --akin to Sweet and Parker's in resistive MHD-- has been elusive. Here, we present such a first principles steady-state theory for electron MHD,ootnotetextL. Chac'on, A. N. Simakov, A. Zocco, Phys. Rev. Lett., submitted and its extension to Hall.ootnotetextA. N. Simakov, L. Chac'on, in preparation The theory discretizes the extended MHD equations at the reconnection site, leading to a set of time-dependent ODEs. Their steady-state analysis provides predictions for the scaling of relevant quantities with the dissipation coefficients (e.g, resistivity and hyper-resistivity) and other relevant parameters. In particular, we will show that EMHD admits both elongated and open-X point configurations of the reconnection region, and that the reconnection rate Ez can be shown not to scale explicitly with the dissipation parameters. This analytic result confirms earlier computational work on the possibility of fast (dissipation-independent) magnetic reconnection in EMHD. We have extended the EMHD results to Hall MHD, and have found a general scaling law for the reconnection rate (and associated length scales) that bridges the gap between resistive and EMHD.

Titanium diboride ceramic fiber composites for Hall-Heroult cells

DOEpatents

Besmann, Theodore M.; Lowden, Richard A.

1990-01-01

An improved cathode structure for Hall-Heroult cells for the electrolytic production of aluminum metal. This cathode structure is a preform fiber base material that is infiltrated with electrically conductive titanium diboride using chemical vapor infiltration techniques. The structure exhibits good fracture toughness, and is sufficiently resistant to attack by molten aluminum. Typically, the base can be made from a mat of high purity silicon carbide fibers. Other ceramic or carbon fibers that do not degrade at temperatures below about 1000 deg. C can be used.

AC conductivity of a quantum Hall line junction

NASA Astrophysics Data System (ADS)

Agarwal, Amit; Sen, Diptiman

2009-09-01

We present a microscopic model for calculating the AC conductivity of a finite length line junction made up of two counter- or co-propagating single mode quantum Hall edges with possibly different filling fractions. The effect of density-density interactions and a local tunneling conductance (σ) between the two edges is considered. Assuming that σ is independent of the frequency ω, we derive expressions for the AC conductivity as a function of ω, the length of the line junction and other parameters of the system. We reproduce the results of Sen and Agarwal (2008 Phys. Rev. B 78 085430) in the DC limit (\\omega \\to 0 ), and generalize those results for an interacting system. As a function of ω, the AC conductivity shows significant oscillations if σ is small; the oscillations become less prominent as σ increases. A renormalization group analysis shows that the system may be in a metallic or an insulating phase depending on the strength of the interactions. We discuss the experimental implications of this for the behavior of the AC conductivity at low temperatures.

Segregation of Impurities in Directionally Solidified Silicon

NASA Technical Reports Server (NTRS)

Ravishankar, P. S.; Younghouse, L. B.

1984-01-01

Hall measurements and four-point probe resistivity measurements are used to determine the concentration profile of boron and iron in doped semi-conductor silicon ingots grown by the Bridgman technique. The concentration profiles are fitted to the normal segregation equation and the effective segregation coefficient, K sub eff, is calculated. The average value of K sub eff, is 0.803 for boron. For iron, K sub eff, is concentration dependent and is in the range 0.00008 to 0.00012.

Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

DOEpatents

Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

2001-01-01

The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

Crystal growth of Dirac semimetal ZrSiS with high magnetoresistance and mobility.

PubMed

Sankar, Raman; Peramaiyan, G; Muthuselvam, I Panneer; Butler, Christopher J; Dimitri, Klauss; Neupane, Madhab; Rao, G Narsinga; Lin, M-T; Chou, F C

2017-01-18

High quality single crystal ZrSiS as a theoretically predicted Dirac semimetal has been grown successfully using a vapor phase transport method. The single crystals of tetragonal structure are easy to cleave into perfect square-shaped pieces due to the van der Waals bonding between the sulfur atoms of the quintuple layers. Physical property measurement results including resistivity, Hall coefficient (R H ), and specific heat are reported. The transport and thermodynamic properties suggest a Fermi liquid behavior with two Fermi pockets at low temperatures. At T = 3 K and magnetic field of Hǁc up to 9 Tesla, large magneto-resistance up to 8500% and 7200% for Iǁ (100) and Iǁ (110) were found. Shubnikov de Haas (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi pockets at the Fermi level via the fast Fourier transform (FFT) analysis. The Hall coefficient (R H ) showed hole-dominated carriers with a high mobility of 3.05 × 10 4  cm 2 V -1 s -1 at 3 K. ZrSiS has been confirmed to be a Dirac semimetal by the Dirac cone mapping near the X-point via angle resolved photoemission spectroscopy (ARPES) with a Dirac nodal line near the Fermi level identified using scanning tunneling spectroscopy (STS).

Theory of the disordered ν =5/2 quantum thermal Hall state: Emergent symmetry and phase diagram

NASA Astrophysics Data System (ADS)

Lian, Biao; Wang, Juven

2018-04-01

Fractional quantum Hall (FQH) system at Landau level filling fraction ν =5 /2 has long been suggested to be non-Abelian, either Pfaffian (Pf) or antiPfaffian (APf) states by numerical studies, both with quantized Hall conductance σx y=5 e2/2 h . Thermal Hall conductances of the Pf and APf states are quantized at κx y=7 /2 and κx y=3 /2 , respectively, in a proper unit. However, a recent experiment shows the thermal Hall conductance of ν =5 /2 FQH state is κx y=5 /2 . It has been speculated that the system contains random Pf and APf domains driven by disorders, and the neutral chiral Majorana modes on the domain walls may undergo a percolation transition to a κx y=5 /2 phase. In this paper, we do perturbative and nonperturbative analyses on the domain walls between Pf and APf. We show the domain wall theory possesses an emergent SO(4) symmetry at energy scales below a threshold Λ1, which is lowered to an emergent U (1 )×U (1) symmetry at energy scales between Λ1 and a higher value Λ2, and is finally lowered to the composite fermion parity symmetry Z2F above Λ2. Based on the emergent symmetries, we propose a phase diagram of the disordered ν =5 /2 FQH system and show that a κx y=5 /2 phase arises at disorder energy scales Λ >Λ1 . Furthermore, we show the gapped double-semion sector of ND compact domain walls contributes nonlocal topological degeneracy 2ND-1, causing a low-temperature peak in the heat capacity. We implement a nonperturbative method to bootstrap generic topological 1 +1 D domain walls (two-surface defects) applicable to any 2 +1 D non-Abelian topological order. We also identify potentially relevant spin topological quantum field theories (TQFTs) for various ν =5 /2 FQH states in terms of fermionic version of U (1) ±8 Chern-Simons theory ×Z8 -class TQFTs.

Towards Thermal Reading of Magnetic States in Hall Crosses

NASA Astrophysics Data System (ADS)

Xu, Y.; Petit-Watelot, S.; Polewczyk, V.; Parent, G.; Montaigne, F.; Wegrowe, J.-E.; Mangin, S.; Lacroix, D.; Hehn, M.; Lacour, D.

2018-03-01

The 3 ω method is a standard way to measure the thermal conductivity of thin films. In this study, we apply the method to read the magnetic state of a perpendicularly magnetized CoTb ferrimagnetic Hall cross using a thermal excitation. In order to generate the thermal excitation, an oscillating current at an ω frequency is applied to the Hall cross using different geometries. The magnetic signals oscillating at ω , 2 ω , and 3 ω are probed using a lock-in technique. From the analysis of the power dependence, we can attribute the 3 ω response to the temperature oscillation and the 2 ω to the temperature-gradient oscillation. Finally, the frequency dependence of the magnetic signals can be understood by considering the heat diffusion in a two-dimensional model.

Sputtering Erosion Measurement on Boron Nitride as a Hall Thruster Material

NASA Technical Reports Server (NTRS)

Britton, Melissa; Waters, Deborah; Messer, Russell; Sechkar, Edward; Banks, Bruce

2002-01-01

The durability of a high-powered Hall thruster may be limited by the sputter erosion resistance of its components. During normal operation, a small fraction of the accelerated ions will impact the interior of the main discharge channel, causing its gradual erosion. A laboratory experiment was conducted to simulate the sputter erosion of a Hall thruster. Tests of sputter etch rate were carried out using 300 to 1000 eV Xenon ions impinging on boron nitride substrates with angles of attack ranging from 30 to 75 degrees from horizontal. The erosion rates varied from 3.41 to 14.37 Angstroms/[sec(mA/sq cm)] and were found to depend on the ion energy and angle of attack, which is consistent with the behavior of other materials.

Magnon Hall effect on the Lieb lattice.

PubMed

Cao, Xiaodong; Chen, Kai; He, Dahai

2015-04-29

Ferromagnetic insulators without inversion symmetry may show magnon Hall effect (MHE) in the presence of a temperature gradient due to the existence of Dzyaloshinskii-Moriya interaction (DMI). In this theoretical study, we investigate MHE on a lattice with inversion symmetry, namely the Lieb lattice, where the DMI is introduced by adding an external electric field. We show the nontrivial topology of this model by examining the existence of edge states and computing the topological phase diagram characterized by the Chern numbers of different bands. Together with the topological phase diagram, we can further determine the sign and magnitude of the transverse thermal conductivity. The impact of the flat band possessed by this model on the thermal conductivity is discussed by computing the Berry curvature analytically.

Flux and Hall states in ABJM with dynamical flavors

NASA Astrophysics Data System (ADS)

Bea, Yago; Jokela, Niko; Lippert, Matthew; Ramallo, Alfonso V.; Zoakos, Dimitrios

2015-03-01

We study the physics of probe D6-branes with quantized internal worldvolume flux in the ABJM background with unquenched massless flavors. This flux breaks parity in the (2+1)-dimensional gauge theory and allows quantum Hall states. Parity breaking is also explicitly demonstrated via the helicity dependence of the meson spectrum. We obtain general expressions for the conductivities, both in the gapped Minkowski embeddings and in the compressible black hole ones. These conductivities depend on the flux and contain a contribution from the dynamical flavors which can be regarded as an effect of intrinsic disorder due to quantum fluctuations of the fundamentals. We present an explicit, analytic family of supersymmetric solutions with nonzero charge density, electric, and magnetic fields.

Transport, Optical, and Magnetic Properties of the Conducting Halide Perovskite CH 3NH 3SnI 3

NASA Astrophysics Data System (ADS)

Mitzi, D. B.; Feild, C. A.; Schlesinger, Z.; Laibowitz, R. B.

1995-01-01

A low-temperature ( T ≤ 100°C) solution technique is described for the preparation of polycrystalline and single crystal samples of the conducting halide perovskite, CH 3NH 3SnI 3. Transport, Hall effect, magnetic, and optical properties are examined over the temperature range 1.8-300 K, confirming that this unusual conducting halide perovskite is a low carrier density p-type metal with a Hall hole density, 1/ RHe ≃ 2 × 10 19 cm -3. The resistivity of pressed pellet samples decreases with decreasing temperature with resistivity ratio ρ(300 K)/ρ(2 K) ≃ 3 and room temperature resistivity ρ(300 K) ≃ 7 mΩ-cm. A free-carrier infrared reflectivity spectrum with a plasma edge observed at approximately 1600 cm -1 further attests to the metallic nature of this compound and suggests a small optical effective mass, m* ≃ 0.2.

Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

NASA Astrophysics Data System (ADS)

Hiramatsu, Hidenori; Ueda, Kazushige; Ohta, Hiromichi; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2003-02-01

Epitaxial films of LaCuOS1-xSex (x=0-1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of ˜50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm2V-1s-1 in LaCuOSe, a comparable value to that of p-type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2×1020 cm-3, while maintaining the Hall mobility as large as 4.0 cm2V-1s-1. Consequently, a degenerate p-type electrical conduction with a conductivity of 140 S cm-1 was achieved.

Magnetic modulation of inverse spin Hall effect in lateral spin-valves

NASA Astrophysics Data System (ADS)

Andrianov, T.; Vedyaev, A.; Dieny, B.

2018-05-01

We analytically investigated the spin-dependent transport properties in a lateral spin-valve device comprising pinned ferromagnetic electrodes allowing the injection of a spin current in a spin conducting channel where spin orbit scattering takes place. This produces an inverse spin Hall (ISHE) voltage across the thickness of the spin conducting channel. It is shown that by adding an extra soft ferromagnetic electrode with rotatable magnetization along the spin conducting channel, the ISHE generated voltage can be magnetically modulated by changing the magnetization orientation of this additional electrode. The dependence of the ISHE voltage on the direction of magnetization of the ferromagnetic electrode with rotatable magnetization was calculated in various configurations. Our results suggest that such structures could be considered as magnetic field sensors in situations where the total thickness of the sensor is constrained such as in hard disk drive readers.

Gauge Physics of Spin Hall Effect

PubMed Central

Tan, Seng Ghee; Jalil, Mansoor B. A.; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi

2015-01-01

Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be instead of −, and Rashba heavy hole instead of −. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity. PMID:26689260

Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Pan, W.; Klem, J. F.; Kim, J. K.; Thalakulam, M.; Cich, M. J.; Lyo, S. K.

2013-03-01

We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e2 / h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Electron transport shows noisy behavior around the CNP at extremely high B fields. When the diagonal conductivity σxx is plotted against the Hall conductivity σxy, a conductivity circle law is discovered, suggesting a chaotic quantum transport behavior. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Large quasiparticle thermal Hall conductivity in the superconductor Ba1-xKxFe2As2

NASA Astrophysics Data System (ADS)

Checkelsky, Joseph; Li, Lu; Chen, G. F.; Luo, J. L.; Wang, N. L.; Ong, N. P.

2009-03-01

We have measured the thermal conductivity κxx and thermal Hall conductivity κxy in single-crystal Ba1-xKxFe2As2. Below the superconducting transition temperature Tc (˜ 30 K), we observe a large peak in the weak-field κxy . A corresponding peak in the zero-field thermal conductivity κxx is also observed. Together, these imply the existence of a large population of hole-like quasiparticles below Tc . In magnetic fields H approaching 35 T, the peaks in κxx are strongly suppressed. A fit of the κxx vs. H curves shows that the data are consistent with the scattering of long-lived quasiparticles by vortices. Using these fits, we have extracted estimates of the quasiparticle mean-free-path, and separated the zero-field electronic and phononic terms κe and κph, respectively. We discuss the origin of the large quasiparticle population in terms a strongly anisotropic gap parameter or a gap with nodes.

Scanning hall probe microscopy (SHPM) using quartz crystal AFM feedback.

PubMed

Dede, M; Urkmen, K; Girişen, O; Atabak, M; Oral, A; Farrer, I; Ritchie, D

2008-02-01

Scanning Hall Probe Microscopy (SHPM) is a quantitative and non-invasive technique for imaging localized surface magnetic field fluctuations such as ferromagnetic domains with high spatial and magnetic field resolution of approximately 50 nm and 7 mG/Hz(1/2) at room temperature. In the SHPM technique, scanning tunneling microscope (STM) or atomic force microscope (AFM) feedback is used to keep the Hall sensor in close proximity of the sample surface. However, STM tracking SHPM requires conductive samples; therefore the insulating substrates have to be coated with a thin layer of gold. This constraint can be eliminated with the AFM feedback using sophisticated Hall probes that are integrated with AFM cantilevers. However it is very difficult to micro fabricate these sensors. In this work, we have eliminated the difficulty in the cantilever-Hall probe integration process, just by gluing a Hall Probe chip to a quartz crystal tuning fork force sensor. The Hall sensor chip is simply glued at the end of a 32.768 kHz or 100 kHz Quartz crystal, which is used as force sensor. An LT-SHPM system is used to scan the samples. The sensor assembly is dithered at the resonance frequency using a digital Phase Locked Loop circuit and frequency shifts are used for AFM tracking. SHPM electronics is modified to detect AFM topography and the frequency shift, along with the magnetic field image. Magnetic domains and topography of an Iron Garnet thin film crystal, NdFeB demagnetised magnet and hard disk samples are presented at room temperature. The performance is found to be comparable with the SHPM using STM feedback.

Hall mobility in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

2011-08-01

Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

First Observation of a Hall Effect in a Dusty Plasma: A Charged Granular Flow with Relevance to Planetary Rings

NASA Astrophysics Data System (ADS)

Eiskowitz, Skylar; Ballew, Nolan; Rojas, Rubén; Lathrop, Daniel

2017-11-01

The particles in Saturn's rings exhibit complex dynamic behavior. They experience solar radiation pressure, electromagnetic forces, and granular collisions. To investigate the possibility of the Hall Effect in the dusty plasma that comprise Saturn's rings, we have built an experiment that demonstrates the Hall Effect in granular matter. We focus on the Hall Effect because the rings' grains become collisionally charged and experience Saturn's dipolar magnetic field and Lorentz forces as they orbit. The experimental setup includes a closed ring-like track where granular matter is forced to circulate driven by compressed air. The structure sits between two electromagnets so that a portion of the track experiences up to a 0.2 T magnetic field. We vary the strength of the field and the speed of the particles. We report the voltage differences between two conducting plates on opposite sides of the track. If Saturn's rings do experience the Hall Effect, the inside and outside of the rings will develop a charge separation that can lead to a radial electric field and various phenomena including orbital effects due to the additional electric forces. Observational evidence from Cassini suggests that Saturn's rings exhibit lighting, supporting the notion that they are electrically charged. TREND REU program sponsored by the National Science Foundation.

Extremely correlated Fermi liquid theory of the t-J model in 2 dimensions: low energy properties

NASA Astrophysics Data System (ADS)

Shastry, B. Sriram; Mai, Peizhi

2018-01-01

Low energy properties of the metallic state of the two-dimensional t-J model are presented for second neighbor hopping with hole-doping (t\\prime ≤slant 0) and electron-doping (t\\prime > 0), with various superexchange energy J. We use a closed set of equations for the Greens functions obtained from the extremely correlated Fermi liquid theory. These equations reproduce the known low energies features of the large U Hubbard model in infinite dimensions. The density and temperature dependent quasiparticle weight, decay rate and the peak spectral heights over the Brillouin zone are calculated. We also calculate the resistivity, Hall conductivity, Hall number and cotangent Hall angle. The spectral features display high thermal sensitivity at modest T for density n≳ 0.8, implying a suppression of the effective Fermi-liquid temperature by two orders of magnitude relative to the bare bandwidth. The cotangent Hall angle exhibits a T 2 behavior at low T, followed by an interesting kink at higher T. The Hall number exhibits strong renormalization due to correlations. Flipping the sign of t\\prime changes the curvature of the resistivity versus T curves between convex and concave. Our results provide a natural route for understanding the observed difference in the temperature dependent resistivity of strongly correlated electron-doped and hole-doped matter.

High-Power Hall Thruster Technology Evaluated for Primary Propulsion Applications

NASA Technical Reports Server (NTRS)

Manzella, David H.; Jankovsky, Robert S.; Hofer, Richard R.

2003-01-01

High-power electric propulsion systems have been shown to be enabling for a number of NASA concepts, including piloted missions to Mars and Earth-orbiting solar electric power generation for terrestrial use (refs. 1 and 2). These types of missions require moderate transfer times and sizable thrust levels, resulting in an optimized propulsion system with greater specific impulse than conventional chemical systems and greater thrust than ion thruster systems. Hall thruster technology will offer a favorable combination of performance, reliability, and lifetime for such applications if input power can be scaled by more than an order of magnitude from the kilowatt level of the current state-of-the-art systems. As a result, the NASA Glenn Research Center conducted strategic technology research and development into high-power Hall thruster technology. During program year 2002, an in-house fabricated thruster, designated the NASA-457M, was experimentally evaluated at input powers up to 72 kW. These tests demonstrated the efficacy of scaling Hall thrusters to high power suitable for a range of future missions. Thrust up to nearly 3 N was measured. Discharge specific impulses ranged from 1750 to 3250 sec, with discharge efficiencies between 46 and 65 percent. This thruster is the highest power, highest thrust Hall thruster ever tested.

“Glass-like” thermal conductivity gradually induced in thermoelectric Sr{sub 8}Ga{sub 16}Ge{sub 30} clathrate by off-centered guest atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Christensen, Sebastian; Schmøkel, Mette Stokkebro; Borup, Kasper Andersen

The origin of the “glass-like” plateau in thermal conductivity of inorganic type I clathrates has been debated for more than a decade. Here, it is demonstrated that the low temperature thermal conductivity of Sr{sub 8}Ga{sub 16}Ge{sub 30} can be controlled by the synthesis method: A flux-grown sample has a “glass-like” plateau in thermal conductivity at low temperature, while a zone-melted sample instead has a crystalline peak. A combination of flux-growth and zone-melting produces an intermediate thermal conductivity. In a comprehensive study of three single crystal samples, it is shown by neutron diffraction that the transition from crystalline peak to “glass-like”more » plateau is related to an increase in Sr guest atom off-centering distance from 0.24 Å to 0.43 Å. By modifying ab initio calculated force constants for the guest atom to an isotropic model, we reproduce both measured heat capacity and inelastic neutron scattering data. The transition from peak to plateau in the thermal conductivity can be modeled by a combined increase of Rayleigh and disorder scattering. Measurement of heat capacity refutes simple models for tunneling of Sr between off-center sites. Furthermore, the electronic properties of the same samples are characterized by Hall carrier density, Seebeck coefficient, and resistivity. The present comprehensive analysis excludes tunneling and charge carrier scattering as dominant contributors to the “glass-like” plateau. The increased guest atom off-centering distance controlled by synthesis provides a possible microscopic mechanism for reducing the low temperature thermal conductivity of clathrates.« less

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

DOE PAGES

Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

2016-05-04

Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at themore » double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

Electronic Phenomena in Two-Dimensional Topological Insulators

NASA Astrophysics Data System (ADS)

Hart, Sean

In recent years, two-dimensional electron systems have played an integral role at the forefront of discoveries in condensed matter physics. These include the integer and fractional quantum Hall effects, massless electron physics in graphene, the quantum spin and quantum anomalous Hall effects, and many more. Investigation of these fascinating states of matter brings with it surprising new results, challenges us to understand new physical phenomena, and pushes us toward new technological capabilities. In this thesis, we describe a set of experiments aimed at elucidating the behavior of two such two-dimensional systems: the quantum Hall effect, and the quantum spin Hall effect. The first experiment examines electronic behavior at the edge of a two-dimensional electron system formed in a GaAs/AlGaAs heterostructure, under the application of a strong perpendicular magnetic field. When the ratio between the number of electrons and flux quanta in the system is tuned near certain integer or fractional values, the electrons in the system can form states which are respectively known as the integer and fractional quantum Hall effects. These states are insulators in the bulk, but carry gapless excitations at the edge. Remarkably, in certain fractional quantum Hall states, it was predicted that even as charge is carried downstream along an edge, heat can be carried upstream in a neutral edge channel. By placing quantum dots along a quantum Hall edge, we are able to locally monitor the edge temperature. Using a quantum point contact, we can locally heat the edge and use the quantum dot thermometers to detect heat carried both downstream and upstream. We find that heat can be carried upstream when the edge contains structure related to the nu = 2/3 fractional quantum Hall state. We further find that this fractional edge physics can even be present when the bulk is tuned to the nu = 1integer quantum Hall state. Our experiments also demonstrate that the nature of this fractional reconstruction can be tuned by modifying the sharpness of the confining potential at the edge. In the second set of experiments, we focus on an exciting new two-dimensional system known as a quantum spin Hall insulator. Realized in quantum well heterostructures formed by layers of HgTe and HgCdTe, this material belongs to a set of recently discovered topological insulators. Like the quantum Hall effect, the quantum spin Hall effect is characterized by an insulating bulk and conducting edge states. However, the quantum spin Hall effect occurs in the absence of an external magnetic field, and contains a pair of counter propagating edge states which are the time-reversed partners of one another. It was recently predicted that a Josephson junction based around one of these edge states could host a new variety of excitation called a Majorana fermion. Majorana fermions are predicted to have non-Abelian braiding statistics, a property which holds promise as a robust basis for quantum information processing. In our experiments, we place a section of quantum spin Hall insulator between two superconducting leads, to form a Josephson junction. By measuring Fraunhofer interference, we are able to study the spatial distribution of supercurrent in the junction. In the quantum spin Hall regime, this supercurrent becomes confined to the topological edge states. In addition to providing a microscopic picture of these states, our measurement scheme generally provides a way to investigate the edge structure of any topological insulator. In further experiments, we tune the chemical potential into the conduction band of the HgTe system, and investigate the behavior of Fraunhofer interference as a magnetic field is applied parallel to the plane of the quantum well. By theoretically analyzing the interference in a parallel field, we find that Cooper pairs in the material acquire a tunable momentum that grows with the magnetic field strength. This finite pairing momentum leads to the appearance of triplet pair correlations at certain locations within the junction, which we are able to control with the external magnetic field. Our measurements and analysis also provide a method to obtain information about the Fermi surface properties and spin-orbit coupling in two-dimensional materials.

Mixed-state Hall effect of high-T(c) superconductors

NASA Astrophysics Data System (ADS)

Kang, Byeongwon

In this dissertation, we presented the study on the mixed-state Hall effect of high-Tc superconductors (HTSs). In order to understand the mechanisms of the puzzling phenomena in the mixed-state Hall effect of HTSs, the Hall sign anomaly and scaling behavior, Hall measurements are conducted in several HTS thin films. We investigate the mechanism of the sign reversal of the Hall resistivity in Tl-2201 films when the electronic band structure is varied through the underdoped, optimally doped, and overdoped regions. It is found that the Hall sign reversals are an intrinsic property of HTSs and determined by electronic band structure. Although pinning is not found to be the mechanism behind sign reversals, pinning can suppress the appearance of the Hall sign reversal. Therefore, it is concluded that two (or more) sign reversals are a generic behavior of HTSs. From a systematic study of the vortex phase diagram, we discover several new features of the vortex liquid. In the presence of pinning, the vortex-liquid phase can be divided into two regions, a glassy liquid (GL) where vortices remain correlated as manifested in non-Ohmic resistivity, and a regular liquid (RL) where resistivity becomes Ohmic as vortices become uncorrelated. The field dependence of the Hall angle is found to be linear in the RL and nonlinear in the GL. Generally the decoupling line (Hk- T), which is defined as a boundary between the GL and the RL, is lower than the depinning line (Hd-T). As pinning increases the Hk-T may approach the Hd-T, thus vortices are decoupled and depinned nearly simultaneously. For a weak pinning system, on the other hand, the Hk-T and the Hd-T are well separated so that single vortices remain pinned in the region Hk ≤ H ≥ Hd. The behavior of s xy is also investigated in the GL and the RL. In the GL s xy is observed to strongly depend on pinning due to the inter-vortex correlation whereas in the RL s xy is independent of pinning since the pinning effect is scaled out.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gadzhaliev, M. M.; Daunov, M. I.; Musaev, A. M., E-mail: akhmed-musaev@yandex.ru

The pressure dependence of permittivity χ of direct gap ZnO, CdTe, InSb, InAs, CdSnAs{sub 2}, and CdGeAs{sub 2} semiconductors in the hydrostatic pressure range from zero to 1 GPa is determined from the results of quantitative analysis of the pressure dependences of resistivity ρ(P) and Hall constant R{sub H}(P). It is found that the dielectric constant decreases upon an increase in pressure so that coefficient (dχ/d{sub P})/χ increases with (dE{sub g}/dP)/E{sub g}.

Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium telluride alloys

NASA Technical Reports Server (NTRS)

Lehoczky, S. L.; Szofran, F. R.

1981-01-01

Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

Are there p-adic knot invariants?

NASA Astrophysics Data System (ADS)

Morozov, A. Yu.

2016-04-01

We suggest using the Hall-Littlewood version of the Rosso-Jones formula to define the germs of p-adic HOMFLY-PT polynomials for torus knots [ m, n] as coefficients of superpolynomials in a q-expansion. In this form, they have at least the [ m, n] ↔ [ n, m] topological invariance. This opens a new possibility to interpret superpolynomials as p-adic deformations of HOMFLY polynomials and poses a question of generalizing to other knot families, which is a substantial problem for several branches of modern theory.

The Use of Shrinkage Techniques in the Estimation of Attrition Rates for Large Scale Manpower Models

DTIC Science & Technology

1988-07-27

auto regressive model combined with a linear program that solves for the coefficients using MAD. But this success has diminished with time (Rowe...8217Harrison-Stevens Forcasting and the Multiprocess Dy- namic Linear Model ", The American Statistician, v.40, pp. 12 9 - 1 3 5 . 1986. 8. Box, G. E. P. and...1950. 40. McCullagh, P. and Nelder, J., Generalized Linear Models , Chapman and Hall. 1983. 41. McKenzie, E. General Exponential Smoothing and the

The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method

NASA Astrophysics Data System (ADS)

Akasaka, Masayasu; Iida, Tsutomu; Matsumoto, Atsunobu; Yamanaka, Kohei; Takanashi, Yoshifumi; Imai, Tomohiro; Hamada, Noriaki

2008-07-01

Bulk Mg2Si crystals were grown using the vertical Bridgman melt growth method. The n-type and p-type dopants, bismuth (Bi) and silver (Ag), respectively, were incorporated during the growth. X-ray powder diffraction analysis revealed clear peaks of Mg2Si with no peaks associated with the metallic Mg and Si phases. Residual impurities and process induced contaminants were investigated by using glow discharge mass spectrometry (GDMS). A comparison between the results of GDMS and Hall effect measurements indicated that electrical activation of the Bi doping in the Mg2Si was sufficient, while activation of the Ag doping was relatively smaller. It was shown that an undoped n-type specimen contained a certain amount of aluminum (Al), which was due either to residual impurities in the Mg source or the incorporation of process-induced impurities. Thermoelectric properties such as the Seebeck coefficient and the electrical and thermal conductivities were measured as a function of temperature up to 850 K. The dimensionless figures of merit for Bi-doped and Ag-doped samples were 0.65 at 840 K and 0.1 at 566 K, respectively. Temperature dependence of the observed Seebeck coefficient was fitted well by the two-carrier model. The first-principles calculations were carried out by using the all-electron band-structure calculation package (ABCAP) in which the full-potential linearized augmented-plane-wave method was employed. The ABCAP calculation adequately presents characteristics of the Seebeck coefficients for the undoped and heavily Bi-doped samples over the whole measured temperature range from room temperature to 850 K. The agreement between the theory and the experiment is poorer for the Ag-doped p-type samples.

Effect of Segmented Electrode Length on the Performances of an Aton-Type Hall Thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Bian, Xingyu; Cao, Anning; Liu, Guangrui; Chen, Long; Yin, Yan

2016-05-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of a Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on the potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of the segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, the radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of the ionization rate in the discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected. supported by National Natural Science Foundation of China (Nos. 11375039 and 11275034) and the Key Project of Science and Technology of Liaoning Province, China (No. 2011224007) and the Fundamental Research Funds for the Central Universities, China (No. 3132014328)

Field experiment evidence of substantive, attributional, and behavioral persuasion by members of Congress in online town halls.

PubMed

Minozzi, William; Neblo, Michael A; Esterling, Kevin M; Lazer, David M J

2015-03-31

Do leaders persuade? Social scientists have long studied the relationship between elite behavior and mass opinion. However, there is surprisingly little evidence regarding direct persuasion by leaders. Here we show that political leaders can persuade their constituents directly on three dimensions: substantive attitudes regarding policy issues, attributions regarding the leaders' qualities, and subsequent voting behavior. We ran two randomized controlled field experiments testing the causal effects of directly interacting with a sitting politician. Our experiments consist of 20 online town hall meetings with members of Congress conducted in 2006 and 2008. Study 1 examined 19 small meetings with members of the House of Representatives (average 20 participants per town hall). Study 2 examined a large (175 participants) town hall with a senator. In both experiments we find that participating has significant and substantively important causal effects on all three dimensions of persuasion but no such effects on issues that were not discussed extensively in the sessions. Further, persuasion was not driven solely by changes in copartisans' attitudes; the effects were consistent across groups.

Field experiment evidence of substantive, attributional, and behavioral persuasion by members of Congress in online town halls

PubMed Central

Minozzi, William; Neblo, Michael A.; Esterling, Kevin M.; Lazer, David M. J.

2015-01-01

Do leaders persuade? Social scientists have long studied the relationship between elite behavior and mass opinion. However, there is surprisingly little evidence regarding direct persuasion by leaders. Here we show that political leaders can persuade their constituents directly on three dimensions: substantive attitudes regarding policy issues, attributions regarding the leaders’ qualities, and subsequent voting behavior. We ran two randomized controlled field experiments testing the causal effects of directly interacting with a sitting politician. Our experiments consist of 20 online town hall meetings with members of Congress conducted in 2006 and 2008. Study 1 examined 19 small meetings with members of the House of Representatives (average 20 participants per town hall). Study 2 examined a large (175 participants) town hall with a senator. In both experiments we find that participating has significant and substantively important causal effects on all three dimensions of persuasion but no such effects on issues that were not discussed extensively in the sessions. Further, persuasion was not driven solely by changes in copartisans’ attitudes; the effects were consistent across groups. PMID:25775516

Sensitivity of resistive and Hall measurements to local inhomogeneities: Finite-field, intensity, and area corrections

NASA Astrophysics Data System (ADS)

Koon, Daniel W.; Wang, Fei; Petersen, Dirch Hjorth; Hansen, Ole

2014-10-01

We derive exact, analytic expressions for the sensitivity of sheet resistance and Hall sheet resistance measurements to local inhomogeneities for the cases of nonzero magnetic fields, strong perturbations, and perturbations over a finite area, extending our earlier results on weak perturbations. We express these sensitivities for conductance tensor components and for other charge transport quantities. Both resistive and Hall sensitivities, for a van der Pauw specimen in a finite magnetic field, are a superposition of the zero-field sensitivities to both sheet resistance and Hall sheet resistance. Strong perturbations produce a nonlinear correction term that depends on the strength of the inhomogeneity. Solution of the specific case of a finite-sized circular inhomogeneity coaxial with a circular specimen suggests a first-order correction for the general case. Our results are confirmed by computer simulations on both a linear four-point probe array on a large circular disc and a van der Pauw square geometry. Furthermore, the results also agree well with Náhlík et al. published experimental results for physical holes in a circular copper foil disc.

Electrical and magnetic properties of 0-3 Ba(Fe1/2Nb1/2)O3/PVDF composites

NASA Astrophysics Data System (ADS)

Ranjan, Hars; Mahto, Uttam K.; Chandra, K. P.; Kulkarni, A. R.; Prasad, A.; Prasad, K.

Lead-free Ba(Fe1/2Nb1/2)O3/PVDF 0-3 composites were fabricated using melt-mixing technique. X-ray diffraction, scanning electron microscopy, dielectric, impedance, ac conductivity, magnetic force microscopy (MFM) and vibrating sample magnetometer studies were undertaken to characterize the samples. Average crystallite size of the Ba(Fe1/2Nb1/2)O3 powder, estimated using Williamson-Hall approach, was found to be ˜42nm. The filler particles of ˜0.5-1μm were found to disperse in the polymer matrix of all the composites. Filler concentration-dependent values of real and imaginary parts of complex permittivity showed increasing trend and were seen to follow Bruggeman and Furukawa equations. The data for ac conductivity exhibited negative temperature coefficient of resistance character of the test materials and were found to obey Jonscher’s power law. The correlated barrier hopping model was found to explain satisfactorily the mechanism of charge transport occurring in the system. MFM confirmed the presence of magnetic phases in the composites. Typical magnetization versus applied field curves indicated the possibility of magnetoelectric coupling in the system. Hence, the present composites have shown themselves as potential multi-functional candidate materials for use in high density data storage applications.

Intrinsic quantum anomalous hall effect in a two-dimensional anilato-based lattice.

PubMed

Ni, Xiaojuan; Jiang, Wei; Huang, Huaqing; Jin, Kyung-Hwan; Liu, Feng

2018-06-13

Using first-principles calculations, we predict an intrinsic quantum anomalous Hall (QAH) state in a monolayer anilato-based metal-organic framework M2(C6O4X2)3 (M = Mn and Tc, X = F, Cl, Br and I). The spin-orbit coupling of M d orbitals opens a nontrivial band gap up to 18 meV at the Dirac point. The electron counting rule is used to explain the intrinsic nature of the QAH state. The calculated nonzero Chern number, gapless edge states and quantized Hall conductance all confirm the nontrivial topological properties in the anilato-based lattice. Our findings provide an organic materials platform for the realization of the QAH effect without the need for magnetic and charge doping, which are highly desirable for the development of low-energy-consumption spintronic devices.

Unusual Thermal Hall Effect in a Kitaev Spin Liquid Candidate α -RuCl3

NASA Astrophysics Data System (ADS)

Kasahara, Y.; Sugii, K.; Ohnishi, T.; Shimozawa, M.; Yamashita, M.; Kurita, N.; Tanaka, H.; Nasu, J.; Motome, Y.; Shibauchi, T.; Matsuda, Y.

2018-05-01

The Kitaev quantum spin liquid displays the fractionalization of quantum spins into Majorana fermions. The emergent Majorana edge current is predicted to manifest itself in the form of a finite thermal Hall effect, a feature commonly discussed in topological superconductors. Here we report on thermal Hall conductivity κx y measurements in α -RuCl3 , a candidate Kitaev magnet with the two-dimensional honeycomb lattice. In a spin-liquid (Kitaev paramagnetic) state below the temperature characterized by the Kitaev interaction JK/kB˜80 K , positive κx y develops gradually upon cooling, demonstrating the presence of highly unusual itinerant excitations. Although the zero-temperature property is masked by the magnetic ordering at TN=7 K , the sign, magnitude, and T dependence of κx y/T at intermediate temperatures follows the predicted trend of the itinerant Majorana excitations.

Unsteady Heat and Mass Transfer of Chemically Reacting Micropolar Fluid in a Porous Channel with Hall and Ion Slip Currents

PubMed Central

2014-01-01

This paper presents an incompressible two-dimensional heat and mass transfer of an electrically conducting micropolar fluid flow in a porous medium between two parallel plates with chemical reaction, Hall and ion slip effects. Let there be periodic injection or suction at the lower and upper plates and the nonuniform temperature and concentration at the plates are varying periodically with time. The flow field equations are reduced to nonlinear ordinary differential equations using similarity transformations and then solved numerically by quasilinearization technique. The profiles of velocity components, microrotation, temperature distribution and concentration are studied for different values of fluid and geometric parameters such as Hartmann number, Hall and ion slip parameters, inverse Darcy parameter, Prandtl number, Schmidt number, and chemical reaction rate and shown in the form of graphs. PMID:27419211

Hidden-Symmetry-Protected Topological Semimetals on a Square Lattice

NASA Astrophysics Data System (ADS)

Hou, Jing-Min

2014-03-01

We study a two-dimensional fermionic square lattice, which supports the existence of two-dimensional Weyl semimetal, quantum anomalous Hall effect, and 2 π -flux topological semimetal in different parameter ranges. We show that the band degenerate points of the two-dimensional Weyl semimetal and 2 π -flux topological semimetal are protected by two distinct novel hidden symmetries, which both corresponds to antiunitary composite operations. When these hidden symmetries are broken, a gap opens between the conduction and valence bands, turning the system into a insulator. With appropriate parameters, a quantum anomalous Hall effect emerges. The degenerate point at the boundary between the quantum anomalous Hall insulator and trivial band insulator is also protected by the hidden symmetry. [PRL 111, 130403(2013)] This work was supported by the National Natural Science Foundation of China under Grants No. 11004028 and No. 11274061.

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

NASA Astrophysics Data System (ADS)

Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

2011-07-01

We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

Titanium diboride ceramic fiber composites for Hall-Heroult cells

DOEpatents

Besmann, T.M.; Lowden, R.A.

1990-05-29

An improved cathode structure is described for Hall-Heroult cells for the electrolytic production of aluminum metal. This cathode structure is a preform fiber base material that is infiltrated with electrically conductive titanium diboride using chemical vapor infiltration techniques. The structure exhibits good fracture toughness, and is sufficiently resistant to attack by molten aluminum. Typically, the base can be made from a mat of high purity silicon carbide fibers. Other ceramic or carbon fibers that do not degrade at temperatures below about 1000 C can be used.

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

NASA Astrophysics Data System (ADS)

Xie, Ting; Dreyer, Michael; Bowen, David; Hinkel, Dan; Butera, R. E.; Krafft, Charles; Mayergoyz, Isaak

2018-05-01

Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

Note: Fiber optic transport probe for Hall measurements under light and magnetic field at low temperatures: Case study of a two dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhadauria, P. P. S.; Gupta, Anurag; Kumar, Pramod

2015-05-15

A fiber optic based probe is designed and developed for electrical transport measurements in presence of quasi-monochromatic (360–800 nm) light, varying temperature (T = 1.8–300 K), and magnetic field (B = 0–7 T). The probe is tested for the resistivity and Hall measurements performed on a LaAlO{sub 3}–SrTiO{sub 3} heterointerface system with a conducting two dimensional electron gas.

Chemical and Biological Defense: DOD Needs to Continue to Collect and Provide Information on Tests and Potentially Exposed Personnel

DTIC Science & Technology

2004-05-01

or Naval officer as test director. Ship-based tests were conducted in the open waters of the North Atlantic and Pacific Oceans and near the...BG, FP Oct. 9, 2002 (ship-based) Granville S. Hall and surround- ing waters and airspace A-4, F-105, and an Aero Commander 65-12, Devil Hole I...Apr.-May 1968 USS Carbonero, USS Oahu, Hawaii, BG June 30, 03 Arrow (ship-based) Granville S. Hall and surrounding waters 69-31 (ship-based) 313 Aug

Hall-MHD and PIC Modeling of the Conduction-to-Opening Transition in a Plasma Opening Switch

NASA Astrophysics Data System (ADS)

Schumer, J. W.; SwanekampDdagger, S. B.; Ottinger, P. F.; Commisso, R. J.; Weber, B. V.

1998-11-01

Utilizing the fast opening characteristics of a plasma opening switch (POS), inductive energy storage devices can generate short-duration high-power pulses (<0.1 μ s, >1 TW) with current rise-times on the order of 10 ns. Plasma redistribution and thinning during the POS conduction phase can be modeled adequately with MHD methods. By including the Hall term in Ohm's Law, MHD methods can simulate plasmas with density gradient scale lengths between c/ω_pe < Ln < c/ω_pi. However, the neglect of electron inertia (c/ω_pe) and space-charge separation (λ_De) by single-fluid theory eventually becomes invalid in small gap regions that form during POS opening. PIC methods are well-suited for low-density plasmas, but are numerically taxed by high-density POS regions. An interface converts MHD (Mach2) output into PIC (Magic) input suitable for validating various transition criteria through comparison of current and density distributions from both methods. We will discuss recent progress in interfacing Hall-MHD and PIC simulations. Work supported by Defense Special Weapons Agency. ^ NRL-NRC Research Associate. hspace0.25in ^ JAYCOR, Vienna, VA 22102.

The influence of additives on Hall-Héroult bath properties

NASA Astrophysics Data System (ADS)

Haupin, Warren

1991-11-01

Molten cryolite is the main ingredient of the Hall-Héroult electrolyte. Additives are used to improve its chemical and physical properties. The ideal additive should decrease the solubility of reduced species in the melt and lower the liquidus temperature for improved Faradaic efficiency. It should increase, or at least not decrease, alumina solubility; increase electrical conductivity for better power efficiency; decrease density to provide better separation between the aluminum and the molten salt, and decrease vapor pressure to minimize fluoride loss. It should neither contain nor produce an ionic species with a lower discharge potential than aluminum (for the cation) or oxygen (for the anion). There is no ideal additive; hence, compromises are made. Alumina solubility and electrical conductivity are often sacrificed for improved Faradaic efficiency.

Characterization of conductive Al-doped ZnO thin films for plasmonic applications

NASA Astrophysics Data System (ADS)

Masouleh, F. F.; Sinno, I.; Buckley, R. G.; Gouws, G.; Moore, C. P.

2018-02-01

Highly conductive and transparent Al-doped zinc oxide films were produced by RF magnetron sputtering for plasmonic applications in the infrared region of the spectrum. These films were characterized using Fourier transform infrared spectroscopy, the Hall effect, Rutherford backscattering spectroscopy and spectral data analysis. Analysis of the results shows a carrier concentration of up to 2.6 × 1020 cm-3, as well as transmission over 80% near the plasma frequency where plasmonic properties are expected. The plasma frequency was calculated from the spectroscopy measurements and subsequent data analysis, and was in agreement with the results from the Hall effect measurements and the free electron gas (Drude) model. Based on these results, the Al-doped zinc oxide thin films are well-suited for plasmonic applications in the infrared region.

Global Simulations of the Inner Regions of Protoplanetary Disks with Comprehensive Disk Microphysics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, Xue-Ning, E-mail: xbai@cfa.harvard.edu

2017-08-10

The gas dynamics of weakly ionized protoplanetary disks (PPDs) are largely governed by the coupling between gas and magnetic fields, described by three non-ideal magnetohydrodynamical (MHD) effects (Ohmic, Hall, ambipolar). Previous local simulations incorporating these processes have revealed that the inner regions of PPDs are largely laminar and accompanied by wind-driven accretion. We conduct 2D axisymmetric, fully global MHD simulations of these regions (∼1–20 au), taking into account all non-ideal MHD effects, with tabulated diffusion coefficients and approximate treatment of external ionization and heating. With the net vertical field aligned with disk rotation, the Hall-shear instability strongly amplifies horizontal magneticmore » field, making the overall dynamics dependent on initial field configuration. Following disk formation, the disk likely relaxes into an inner zone characterized by asymmetric field configuration across the midplane, which smoothly transitions to a more symmetric outer zone. Angular momentum transport is driven by both MHD winds and laminar Maxwell stress, with both accretion and decretion flows present at different heights, and modestly asymmetric winds from the two disk sides. With anti-aligned field polarity, weakly magnetized disks settle into an asymmetric field configuration with supersonic accretion flow concentrated at one side of the disk surface, and highly asymmetric winds between the two disk sides. In all cases, the wind is magneto-thermal in nature, characterized by a mass loss rate exceeding the accretion rate. More strongly magnetized disks give more symmetric field configuration and flow structures. Deeper far-UV penetration leads to stronger and less stable outflows. Implications for observations and planet formation are also discussed.« less

Photo-Hall-effect study of excitation and recombination in Fe-doped GaN

NASA Astrophysics Data System (ADS)

Look, David C.; Leach, Jacob H.; Metzger, Robert

2017-02-01

The photo-Hall-effect was applied to the study of electron dynamics in semi-insulating Fe-doped GaN. High-powered light-emitting diodes of wavelengths λ = 940, 536, 449, 402, and 365 nm were used to excite steady-state free-electron volume concentrations Δn = 105-108 cm-3, depending on λ and intensity I0. Electron lifetime τ was determined from the energy E dependence of the excited sheet electron concentration Δns through the relationship Δns = I0τA(E), where the absorbance A(E) is a known function of sample thickness d and absorption coefficient α, and the energy dependence of α is taken from a theory of deep-center photoionization. The major sample impurities were Fe, Si, and C, with [Fe] ≫ [Si] and [C]. Fitted lifetimes τ ranged from 15 to 170 ps, depending on [Fe]. It was found that Δns ∝ I0 for [Si] > [C] and ∝ I01/2 for [Si] < [C]; the latter dependence arises possibly from self-compensation of neutral C impurities by N-vacancy donors. For [Si] > [C], some of the neutral Fe3+ is converted to Fe2+ with ground state Fe2+(5E) and excited state Fe2+(5T2); a fit of n vs. temperature T over the range of 290-325 K in the dark establishes E5E with respect to the conduction band: ECB - E5E = 0.564 eV - β5ET, where β5E = 3.6 × 10-4 eV/K. At room temperature, 294 K, ECB - E5E = 0.46 eV and ECB - E5T2 = 0.07 eV.

Spin transport study in a Rashba spin-orbit coupling system

PubMed Central

Mei, Fuhong; Zhang, Shan; Tang, Ning; Duan, Junxi; Xu, Fujun; Chen, Yonghai; Ge, Weikun; Shen, Bo

2014-01-01

One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility Ds/μs = 0.08 V was extracted at room temperature. PMID:24504193

Deposition and characterization of spray pyrolysed p-type Cu2SnS3 thin film for potential absorber layer of solar cell

NASA Astrophysics Data System (ADS)

Thiruvenkadam, S.; Sakthi, P.; Prabhakaran, S.; Chakravarty, Sujay; Ganesan, V.; Rajesh, A. Leo

2018-06-01

Thin film of ternary Cu2SnS3 (CTS), a potential absorber layer for solar cells was successfully deposited by chemical spray pyrolysis technique. The GIXRD pattern revealed that the film having tetragonal Cu2SnS3 phase with the preferential orientation along (112), (200), (220) and (312) plane and it is further confirmed using Raman spectroscopy by the existence of Raman peak at 320 cm-1. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 28.8 nm. The absorption coefficient was found to be greater than the order of 105 cm-1 and bandgap of 1.70 eV. Hall effect measurement indicates the p type nature of the film with a hole concentration of 1.03 × 1016cm-3 and a hall mobility of 404 cm2/V. The properties of CTS thin film confirmed suitable to be a potential absorber layer material for photovoltaic applications.

Transport coefficients of Dirac ferromagnet: Effects of vertex corrections

NASA Astrophysics Data System (ADS)

Fujimoto, Junji

2018-03-01

As a strongly spin-orbit-coupled metallic model with ferromagnetism, we have considered an extended Stoner model to the relativistic regime, named Dirac ferromagnet in three dimensions. In a previous paper [J. Fujimoto and H. Kohno, Phys. Rev. B 90, 214418 (2014), 10.1103/PhysRevB.90.214418], we studied the transport properties giving rise to the anisotropic magnetoresistance (AMR) and the anomalous Hall effect (AHE) with the impurity potential being taken into account only as the self-energy. The effects of the vertex corrections (VCs) to AMR and AHE are reported in this paper. AMR is found not to change quantitatively when the VCs are considered, although the transport lifetime is different from the one-electron lifetime and the charge current includes additional contributions from the correlation with spin currents. The side-jump and the skew-scattering contributions to AHE are also calculated. The skew-scattering contribution is dominant in the clean case as can be seen in the spin Hall effect in the nonmagnetic Dirac electron system.

Electronic transport behavior of off-stoichiometric La and Nb doped SrxTiyO3-δ epitaxial thin films and donor doped single-crystalline SrTiO3

NASA Astrophysics Data System (ADS)

Baniecki, J. D.; Ishii, M.; Aso, H.; Kobayashi, K.; Kurihara, K.; Yamanaka, K.; Vailionis, A.; Schafranek, R.

2011-12-01

Above room temperature electronic transport properties of SrxTiyO3-δ films with cation A/B = (La + Sr/Nb + Ti) ratios of 0.9 to 1.2 are compared to STO single crystals with combined Hall carrier densities of 3 × 1016 cm-3 ≤ nH ≤ 1022 cm-3. In contrast to Hall mobility which is single crystal-like (μH ≈ 6 cm2/Vs) only near A/B = 1, the Seebeck coefficient (S) is single crystal-like over a range of nonstoichiometry. For nH < 1020 cm-3, S is well described by nondegenerate band-like transport with a constant effective mass m∗/mo ≈ 5-8. For nH > 1021 cm-3, S is metallic-like with m∗/mo ˜ 8. No marked increase in m∗ with decreasing nH owing to a carrier filling dependence is observed.

Imaging snake orbits at graphene n -p junctions

NASA Astrophysics Data System (ADS)

Kolasiński, K.; Mreńca-Kolasińska, A.; Szafran, B.

2017-01-01

We consider conductance mapping of the snake orbits confined along the n -p junction defined in graphene by the electrostatic doping in the quantum Hall regime. We explain the periodicity of conductance oscillations at the magnetic field and the Fermi energy scales by the properties of the n -p junction as a conducting channel. We evaluate the conductance maps for a floating gate scanning the surface of the device. In the quantum Hall conditions the currents flow near the edges of the sample and along the n -p junction. The conductance mapping resolves only the n -p junction and not the edges. The conductance oscillations along the junction are found in the maps with periodicity related to the cyclotron orbits of the scattering current. Stronger probe potentials provide support to localized resonances at one of the sides of the junction with current loops that interfere with the n -p junction currents. The interference results in a series of narrow lines parallel to the junction with positions that strongly depend on the magnetic field through the Aharonov-Bohm effect. The consequences of a limited transparency of finite-width n -p junctions are also discussed.

Mean-free-paths in concert and chamber music halls and the correct method for calibrating dodecahedral sound sources.

PubMed

Beranek, Leo L; Nishihara, Noriko

2014-01-01

The Eyring/Sabine equations assume that in a large irregular room a sound wave travels in straight lines from one surface to another, that the surfaces have an average sound absorption coefficient αav, and that the mean-free-path between reflections is 4 V/Stot where V is the volume of the room and Stot is the total area of all of its surfaces. No account is taken of diffusivity of the surfaces. The 4 V/Stot relation was originally based on experimental determinations made by Knudsen (Architectural Acoustics, 1932, pp. 132-141). This paper sets out to test the 4 V/Stot relation experimentally for a wide variety of unoccupied concert and chamber music halls with seating capacities from 200 to 5000, using the measured sound strengths Gmid and reverberation times RT60,mid. Computer simulations of the sound fields for nine of these rooms (of varying shapes) were also made to determine the mean-free-paths by that method. The study shows that 4 V/Stot is an acceptable relation for mean-free-paths in the Sabine/Eyring equations except for halls of unusual shape. Also demonstrated is the proper method for calibrating the dodecahedral sound source used for measuring the sound strength G, i.e., the reverberation chamber method.

Hall Thruster Thermal Modeling and Test Data Correlation

NASA Technical Reports Server (NTRS)

Myers, James; Kamhawi, Hani; Yim, John; Clayman, Lauren

2016-01-01

The life of Hall Effect thrusters are primarily limited by plasma erosion and thermal related failures. NASA Glenn Research Center (GRC) in cooperation with the Jet Propulsion Laboratory (JPL) have recently completed development of a Hall thruster with specific emphasis to mitigate these limitations. Extending the operational life of Hall thursters makes them more suitable for some of NASA's longer duration interplanetary missions. This paper documents the thermal model development, refinement and correlation of results with thruster test data. Correlation was achieved by minimizing uncertainties in model input and recognizing the relevant parameters for effective model tuning. Throughout the thruster design phase the model was used to evaluate design options and systematically reduce component temperatures. Hall thrusters are inherently complex assemblies of high temperature components relying on internal conduction and external radiation for heat dispersion and rejection. System solutions are necessary in most cases to fully assess the benefits and/or consequences of any potential design change. Thermal model correlation is critical since thruster operational parameters can push some components/materials beyond their temperature limits. This thruster incorporates a state-of-the-art magnetic shielding system to reduce plasma erosion and to a lesser extend power/heat deposition. Additionally a comprehensive thermal design strategy was employed to reduce temperatures of critical thruster components (primarily the magnet coils and the discharge channel). Long term wear testing is currently underway to assess the effectiveness of these systems and consequently thruster longevity.

Spectral Analysis of Non-ideal MRI Modes: The Effect of Hall Diffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohandas, Gopakumar; Pessah, Martin E., E-mail: gopakumar@nbi.ku.dk, E-mail: mpessah@nbi.ku.dk

The effect of magnetic field diffusion on the stability of accretion disks is a problem that has attracted considerable interest of late. In particular, the Hall effect has the potential to bring about remarkable changes in the dynamical behavior of disks that are without parallel. In this paper, we conduct a systematic examination of the linear eigenmodes in a weakly magnetized differentially rotating gas with a special focus on Hall diffusion. We first develop a geometrical representation of the eigenmodes and provide a detailed quantitative description of the polarization properties of the oscillatory modes under the combined influence of themore » Coriolis and Hall effects. We also analyze the effects of magnetic diffusion on the structure of the unstable modes and derive analytical expressions for the kinetic and magnetic stresses and energy densities associated with the non-ideal magnetorotational instability (MRI). Our analysis explicitly demonstrates that, if the dissipative effects are relatively weak, the kinetic stresses and energies make up the dominant contribution to the total stress and energy density when the equilibrium angular momentum and magnetic field vectors are anti-parallel. This is in sharp contrast to what is observed in the case of the ideal or dissipative MRI. We conduct shearing box simulations and find very good agreement with the results derived from linear theory. Because the modes under consideration are also exact solutions of the nonlinear equations, the unconventional nature of the kinetic and magnetic stresses may have significant implications for the nonlinear evolution in some regions of protoplanetary disks.« less

Transport properties in magnetic field of Pb1-xSnxTe alloys doped with Indium

NASA Astrophysics Data System (ADS)

Jovovic, V.; Joottu-Thiagaraj, S.; West, J.; Heremans, J. P.; Khokhlov, D.

2007-03-01

The galvanomagnetic and thermomagnetic transport properties of single-crystal In-doped Pb1-xSnxTe are presented as a function of Sn (10 to 30%) and In (0 to 10%) concentrations. The concept is that the In level might pin the Fermi energy in a position with and enhanced density of states, which might increase the thermoelectric figure of merit. The transport properties were measured in a transverse magnetic field and at temperatures varying from 80 to 380K. Depending on the Sn concentrations, the prepared samples are p and n type semiconductors. The measurements of the electrical conductivity, Hall, Seebeck and transverse Nernst-Ettingshausen effects yield the carrier density and mobility, the density of states effective mass, and the scattering exponent, following the method of the four coefficients. The transport properties are interpreted in terms of hybridization of the In levels and density of state of the host alloy and observations are discussed in terms of Mahan-Sofo theory. The model provides an explanation for unexpected variation in thermoelectric and thermomagnetic properties of these alloys.

Repetitively Mode-Locked Cavity-Enhanced Absorption Spectroscopy (RML-CEAS) for Near-Infrared Gas Sensing

PubMed Central

Zheng, Chuantao; Wang, Yiding

2017-01-01

A Pound-Drever-Hall (PDH)-based mode-locked cavity-enhanced sensor system was developed using a distributed feedback diode laser centered at 1.53 µm as the laser source. Laser temperature scanning, bias control of the piezoelectric ceramic transducer (PZT) and proportional-integral-derivative (PID) feedback control of diode laser current were used to repetitively lock the laser modes to the cavity modes. A gas absorption spectrum was obtained by using a series of absorption data from the discrete mode-locked points. The 15 cm-long Fabry-Perot cavity was sealed using an enclosure with an inlet and outlet for gas pumping and a PZT for cavity length tuning. The performance of the sensor system was evaluated by conducting water vapor measurements. A linear relationship was observed between the measured absorption signal amplitude and the H2O concentration. A minimum detectable absorption coefficient of 1.5 × 10–8 cm–1 was achieved with an averaging time of 700 s. This technique can also be used for the detection of other trace gas species by targeting the corresponding gas absorption line. PMID:29207470

Correlation between non-Fermi-liquid behavior and superconductivity in (Ca, La)(Fe,Co)As2 iron arsenides: A high-pressure study

NASA Astrophysics Data System (ADS)

Zhou, W.; Ke, F.; Xu, Xiaofeng; Sankar, R.; Xing, X.; Xu, C. Q.; Jiang, X. F.; Qian, B.; Zhou, N.; Zhang, Y.; Xu, M.; Li, B.; Chen, B.; Shi, Z. X.

2017-11-01

Non-Fermi-liquid (NFL) phenomena associated with correlation effects have been widely observed in the phase diagrams of unconventional superconducting families. Exploration of the correlation between the normal state NFL, regardless of its microscopic origins, and the superconductivity has been argued as a key to unveiling the mystery of the high-Tc pairing mechanism. Here we systematically investigate the pressure-dependent in-plane resistivity (ρ ) and Hall coefficient (RH) of a high-quality 112-type Fe-based superconductor Ca1 -xLaxFe1 -yCoyAs2 (x =0.2 ,y =0.02 ). With increasing pressure, the normal-state resistivity of the studied sample exhibits a pronounced crossover from non-Fermi-liquid to Fermi-liquid behaviors. Accompanied with this crossover, Tc is gradually suppressed. In parallel, the extremum in the Hall coefficient RH(T ) curve, possibly due to anisotropic scattering induced by spin fluctuations, is also gradually suppressed. The symbiosis of NFL and superconductivity implies that these two phenomena are intimately related. Further study on the pressure-dependent upper critical field reveals that the two-band effects are also gradually weakened with increasing pressure and reduced to the one-band Werthamer-Helfand-Hohenberg limit in the low-Tc regime. Overall, our paper supports the picture that NFL, multigap, and extreme RH(T ) are all of the same magnetic origin, i.e., the spin fluctuations in the 112 iron arsenide superconductors.

Hall and transverse even effects in the vicinity of a quantum critical point in Tm{sub 1-x}Yb{sub x}B{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sluchanko, N. E., E-mail: nes@lt.gpi.ru; Azarevich, A. N.; Bogach, A. V.

2012-09-15

The angular, temperature, and magnetic field dependences of the resistance recorded in the Hall effect geometry are studied for the rare-earth dodecaboride Tm{sub 1-x}Yb{sub x}B{sub 12} solid solutions where the metal-insulator and antiferromagnetic-paramagnetic phase transitions are observed in the vicinity of the quantum critical point x{sub c} Almost-Equal-To 0.3. The measurements performed on high-quality single crystals in the temperature range 1.9-300 K for the first time have revealed the appearance of the second harmonic contribution, a transverse even effect in these fcc compounds near the quantum critical point. This contribution a is found to increase drastically both under the Tm-to-ytterbiummore » substitution in the range x > x{sub c} and with an increase in the external magnetic field. Moreover, as the Yb concentration x increases, a negative peak of a significant amplitude appears on the temperature dependences of the Hall coefficient R{sub H}(T) for the Tm{sup 1-x}Yb{sub x}B{sub 12} compounds, in contrast to the invariable behavior R{sub H}(T) Almost-Equal-To const found for TmB{sub 12}. The complicated activation-type behavior of the Hall coefficient is observed at intermediate temperatures for x {>=} 0.5 with activation energies E{sub g}/k{sub B} Almost-Equal-To 200 K and E{sub a}/k{sub B} 55-75 K, and the sign inversion of R{sub H}(T) is detected at liquid-helium temperatures in the coherent regime. Renormalization effects in the electron density of states induced by variation of the Yb concentration are analyzed. The anomalies of the charge transport in Tm{sub 1-x}Yb{sub x}B{sub 12} solid solutions in various regimes (charge gap formation, intra-gap many-body resonance, and coherent regime) are discussed in detail and the results are interpreted in terms of the electron phase separation effects in combination with the formation of nanosize clusters of rare earth ions in the cage-glass state of the studied dodecaborides. The data obtained allow concluding that the emergence of Yb-Yb dimers in the Tm{sub 1-x}Yb{sub x}B{sub 12} cage-glass matrix is the origin of the metal-insulator transition observed in the achetypal strongly correlated electron system of YbB{sub 12}.« less

Topological Hall Effect from Strong to Weak Coupling

NASA Astrophysics Data System (ADS)

Nakazawa, Kazuki; Bibes, Manuel; Kohno, Hiroshi

2018-03-01

The topological Hall effect (THE) of electrons coupled to a noncoplanar spin texture has been studied so far for the strong- and weak-coupling regimes separately; the former in terms of the Berry phase and the latter by perturbation theory. In this letter, we present a unified treatment in terms of spin gauge field by considering not only the adiabatic (Berry phase) component of the gauge field but also the nonadiabatic component. While only the adiabatic contribution is important in the strong-coupling regime, it is completely canceled by a part of the nonadiabatic contribution in the weak-coupling regime, where the THE is governed by the remaining nonadiabatic terms. We found a new weak-coupling region that cannot be accessed by a simple perturbation theory, where the Hall conductivity is proportional to M, with 2M being the exchange splitting of the electron spectrum.

Current-induced switching in a magnetic insulator

NASA Astrophysics Data System (ADS)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2017-11-01

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

Nonreciprocal quantum Hall devices with driven edge magnetoplasmons in two-dimensional materials

NASA Astrophysics Data System (ADS)

Bosco, S.; DiVincenzo, D. P.

2017-05-01

We develop a theory that describes the response of nonreciprocal devices employing two-dimensional materials in the quantum Hall regime capacitively coupled to external electrodes. As the conduction in these devices is understood to be associated to the edge magnetoplasmons (EMPs), we first investigate the EMP problem by using the linear response theory in the random phase approximation. Our model can incorporate several cases that were often treated on different grounds in literature. In particular, we analyze plasmonic excitations supported by a smooth and sharp confining potential in a two-dimensional electron gas, and in monolayer graphene, and we point out the similarities and differences in these materials. We also account for a general time-dependent external drive applied to the system. Finally, we describe the behavior of a nonreciprocal quantum Hall device: the response contains additional resonant features, which were not foreseen from previous models.

Spin-orbit assisted transmission at 3d/5d metallic interfaces

NASA Astrophysics Data System (ADS)

Jaffres, Henri; Barbedienne, Quentin; Jouy, Augustin; Reyren, Nicolas; George, Jean-Marie; Laboratoire de Physique Et Des Plasmas, Ecole Polytechnique, Palaiseau, France Team; Unite Mixte de Physique Cnrs-Thales, Palaiseau, France Team

We will describe the anatomy of spin-transport and spin-orbit torques (SOT) at spin-orbit active interfaces involving 5d transition metals (TM) as heavy metals spin-Hall effect (SHE) materials and 3d TM in [Co,Ni]/Pt, NiFe. NiFe/Au:W and Co/Pt/Au;W systems. In the case of Pt, recent studies have put forward the major role played by the spin-memory loss (SML), the electronic transparency at 3d/5d interfaces and the inhomogeneity of the conductivity in the CIP-geometry. Ingredients to consider for spin-transport and spin-Hall Magnetoresistance (SMR) are the conductivity, the spin-current profiles across the multilayers and the spin-transmission. We will present SMR measurements observed on these systems possibly involving interfacial Anisotropy of Magnetoresistance (AIMR) contributions. We analyze in large details our SMR signals in the series of samples owing: i) the exact conductivity profile across the multilayers via the Camley-Barnas approach and the spin current profile generated by SHE. We will discuss the role of the generalized spin-mixing conductance on the spin-transport properties and spin-orbit torques.

Terahertz response in the quantum-Hall-effect regime of a quantum-well-based charge-sensitive infrared phototransistor

NASA Astrophysics Data System (ADS)

Nakagawa, Daisuke; Takizawa, Kazuhiro; Ikushima, Kenji; Kim, Sunmi; Patrashin, Mikhail; Hosako, Iwao; Komiyama, Susumu

2018-04-01

The characteristics of a charge-sensitive infrared phototransistor (CSIP) based on a GaAs/AlGaAs multiple quantum-well (QW) structure are studied under a magnetic field. In the CSIP, the upper QWs serve as a floating gate that is charged by photoexcitation. The photoinduced charges are detected using the resistance of the lowest QW conducting channel. The conducting channel exhibits the integer quantum Hall effect (QHE) in a perpendicular high magnetic field, yielding the magnetic field dependence of the terahertz (THz) response ΔR. We found two different features of ΔR. One is that ΔR switches sign across the QHE plateau, which is explained simply by an increased electron density in the conducting channel. The other feature is observed as an enhanced positive ΔR when a potential barrier is formed in the conducting channel. The latter mechanism can be interpreted as the promotion of edge/bulk scattering due to photoinduced charges. These findings suggest ways to enhance the THz response by using magnetic fields and potential barriers.

Low-Cost Timer to Measure the Terminal Velocity of a Magnet Falling through a Conducting Pipe

ERIC Educational Resources Information Center

Pathare, Shirish R.; Huli, Saurabhee; Lahane, Rohan; Sawant, Sumedh

2014-01-01

Dropping a magnet into a conductive pipe (made up of copper or brass or aluminum) is a very popular demonstration in many physics classrooms and laboratories. In this paper we present an inexpensive timer that can be used to measure the terminal velocity of the magnet falling through a conducting pipe. The timer assembly consists of Hall effect…

Cathode for a hall-heroult type electrolytic cell for producing aluminum

DOEpatents

Brown, Craig W.

2004-04-13

A method of producing aluminum from alumina in an electrolytic cell including using a cathode comprised of a base material having low electrical conductivity and wettable with molten aluminum to form a reaction layer having a high electrical conductivity on said base layer and a cathode bar extending from said reaction layer through said base material to conduct electrical current from said reaction layer.

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

DOE PAGES

Wang, Jing; Zhou, Quan; Lian, Biao; ...

2015-08-31

Here, we propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional s -wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance willmore » be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between e 2 /2h and e2 /h with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.« less

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jing; Zhou, Quan; Lian, Biao

Here, we propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional s -wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance willmore » be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between e 2 /2h and e2 /h with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.« less

CsSnI[subscript 3]: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chung, In; Song, Jung-Hwan; Im, Jino

CsSnI{sub 3} is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI{sub 3} have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI{sub 3}, coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI{submore » 3}. The black orthorhombic form of CsSnI{sub 3} demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI{sub 3} indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of {approx} 10{sup 17} cm{sup -3} and a hole mobility of {approx} 585 cm{sup 2} V{sup -1} s{sup -1}. The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI{sub 3} is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.« less

First- and second-order metal-insulator phase transitions and topological aspects of a Hubbard-Rashba system

NASA Astrophysics Data System (ADS)

Marcelino, Edgar

2017-05-01

This paper considers a model consisting of a kinetic term, Rashba spin-orbit coupling and short-range Coulomb interaction at zero temperature. The Coulomb interaction is decoupled by a mean-field approximation in the spin channel using field theory methods. The results feature a first-order phase transition for any finite value of the chemical potential and quantum criticality for vanishing chemical potential. The Hall conductivity is also computed using the Kubo formula in a mean-field effective Hamiltonian. In the limit of infinite mass the kinetic term vanishes and all the phase transitions are of second order; in this case the spontaneous symmetry-breaking mechanism adds a ferromagnetic metallic phase to the system and features a zero-temperature quantization of the Hall conductivity in the insulating one.

Topological Sachdev-Ye-Kitaev model

NASA Astrophysics Data System (ADS)

Zhang, Pengfei; Zhai, Hui

2018-05-01

In this Rapid Communication, we construct a large-N exactly solvable model to study the interplay between interaction and topology, by connecting the Sachdev-Ye-Kitaev (SYK) model with constant hopping. The hopping forms a band structure that can exhibit both topologically trivial and nontrivial phases. Starting from a topologically trivial insulator with zero Hall conductance, we show that the interaction can drive a phase transition to a topologically nontrivial insulator with quantized nonzero Hall conductance, and a single gapless Dirac fermion emerges when the interaction is fine tuned to the critical point. The finite temperature effect is also considered, and we show that the topological phase with a stronger interaction is less stable against temperature. Our model provides a concrete example to illustrate the interacting topological phases and phase transitions, and can shed light on similar problems in physical systems.

Slow quenches in two-dimensional time-reversal symmetric Z2 topological insulators

NASA Astrophysics Data System (ADS)

Ulčakar, Lara; Mravlje, Jernej; Ramšak, Anton; Rejec, Tomaž

2018-05-01

We study the topological properties and transport in the Bernevig-Hughes-Zhang model undergoing a slow quench between different topological regimes. Due to the closing of the band gap during the quench, the system ends up in an excited state. We prove that for quenches that preserve the time-reversal symmetry, the Z2 invariant remains equal to the one evaluated in the initial state. On the other hand, the bulk spin Hall conductivity does change, and its time average approaches that of the ground state of the final Hamiltonian. The deviations from the ground-state spin Hall conductivity as a function of the quench time follow the Kibble-Zurek scaling. We also consider the breaking of the time-reversal symmetry, which restores the correspondence between the bulk invariant and the transport properties after the quench.

ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitkalov, Sergey A.; Bowers, C. Russell; Simmons, Jerry A.

2000-02-15

This paper presents a study of the enhancement of the Zeeman energy of two-dimensional (2D) conduction electrons near the {nu}=1 filling factor of the quantum Hall effect by optical dynamic nuclear polarization. The change in the Zeeman energy is determined from the Overhauser shift of the transport detected electron spin resonance in GaAs/Al{sub x}Ga{sub 1-x}As multiquantum wells. In a separate experiment the NMR signal enhancement factor is obtained by radio frequency detected nuclear magnetic resonance under similar conditions in the same sample. These measurements afford an estimation of the hyperfine coupling constant between the nuclei and 2D conduction electrons. (c)more » 2000 The American Physical Society.« less

Magnetic circuit for hall effect plasma accelerator

NASA Technical Reports Server (NTRS)

Manzella, David H. (Inventor); Jacobson, David T. (Inventor); Hofer, Richard (Inventor); Peterson, Peter (Inventor); Jankovsky, Robert S. (Inventor)

2009-01-01

A Hall effect plasma accelerator includes inner and outer electromagnets, circumferentially surrounding the inner electromagnet along a thruster centerline axis and separated therefrom, inner and outer magnetic conductors, in physical connection with their respective inner and outer electromagnets, with the inner magnetic conductor having a mostly circular shape and the outer magnetic conductor having a mostly annular shape, a discharge chamber, located between the inner and outer magnetic conductors, a magnetically conducting back plate, in magnetic contact with the inner and outer magnetic conductors, and a combined anode electrode/gaseous propellant distributor, located at a bottom portion of the discharge chamber. The inner and outer electromagnets, the inner and outer magnetic conductors and the magnetically conducting back plate form a magnetic circuit that produces a magnetic field that is largely axial and radially symmetric with respect to the thruster centerline.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions

NASA Astrophysics Data System (ADS)

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B. S.; Suwas, Satyam; Mallik, Ramesh Chandra

2018-03-01

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

PubMed

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-02-12

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

Splitting of the zero-energy Landau level and universal dissipative conductivity at critical points in disordered graphene.

PubMed

Ortmann, Frank; Roche, Stephan

2013-02-22

We report on robust features of the longitudinal conductivity (σ(xx)) of the graphene zero-energy Landau level in the presence of disorder and varying magnetic fields. By mixing an Anderson disorder potential with a low density of sublattice impurities, the transition from metallic to insulating states is theoretically explored as a function of Landau-level splitting, using highly efficient real-space methods to compute the Kubo conductivities (both σ(xx) and Hall σ(xy)). As long as valley degeneracy is maintained, the obtained critical conductivity σ(xx) =/~ 1.4e(2)/h is robust upon an increase in disorder (by almost 1 order of magnitude) and magnetic fields ranging from about 2 to 200 T. When the sublattice symmetry is broken, σ(xx) eventually vanishes at the Dirac point owing to localization effects, whereas the critical conductivities of pseudospin-split states (dictating the width of a σ(xy) = 0 plateau) change to σ(xx) =/~ e(2)/h, regardless of the splitting strength, superimposed disorder, or magnetic strength. These findings point towards the nondissipative nature of the quantum Hall effect in disordered graphene in the presence of Landau level splitting.

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

1995-01-01

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Hall effects on MHD flow of heat generating/absorbing fluid through porous medium in a rotating parallel plate channel

NASA Astrophysics Data System (ADS)

Swarnalathamma, B. V.; Krishna, M. Veera

2017-07-01

We studied heat transfer on MHD convective flow of viscous electrically conducting heat generating/absorbing fluid through porous medium in a rotating channel under uniform transverse magnetic field normal to the channel and taking Hall current. The flow is governed by the Brinkman's model. The diagnostic solutions for the velocity and temperature are obtained by perturbation technique and computationally discussed with respect to flow parameters through the graphs. The skin friction and Nusselt number are also evaluated and computationally discussed with reference to pertinent parameters in detail.

Topological Valley Currents in Gapped Dirac Materials

NASA Astrophysics Data System (ADS)

Lensky, Yuri D.; Song, Justin C. W.; Samutpraphoot, Polnop; Levitov, Leonid S.

2015-06-01

Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent. Valley currents induced by an external bias are characterized by a quantized half-integer valley Hall conductivity. The undergap currents dominate magnetization and the charge Hall effect in a light-induced valley-polarized state.

Room temperature magneto-transport properties of nanocomposite Fe-In2O3 thin films

NASA Astrophysics Data System (ADS)

Tambasov, Igor A.; Gornakov, Kirill O.; Myagkov, Victor G.; Bykova, Liudmila E.; Zhigalov, Victor S.; Matsynin, Alexey A.; Yozhikova, Ekaterina V.

2015-12-01

A ferromagnetic Fe-In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe-In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe-In2O3 thin film had n=1.94·1020 cm-3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~-0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.

Excitons in the Fractional Quantum Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-09-01

Quasiparticles of charge 1/m in the Fractional Quantum Hall Effect form excitons, which are collective excitations physically similar to the transverse magnetoplasma oscillations of a Wigner crystal. A variational exciton wavefunction which shows explicitly that the magnetic length is effectively longer for quasiparticles than for electrons is proposed. This wavefunction is used to estimate the dispersion relation of these excitons and the matrix elements to generate them optically out of the ground state. These quantities are then used to describe a type of nonlinear conductivity which may occur in these systems when they are relatively clean.

Carrier coherence and high-resolution Hall effect measurements in organic semiconductors.

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly

Charge conduction in organic semiconductors frequently occurs in a regime at the borderline between a band-like coherent motion of delocalazied carriers in extended states and an incoherent hopping through localized states. Many intrinsic factors are competing for defining the dominant transport mechanism, including the strength of intermolecular interactions represented by the transfer integrals, carrier self-localization due to formation of polarons, electron-phonon coupling, scattering and off-diagonal thermal disorder (see, e.g.,). Depending on the interplay between these processes, either band-like or hopping charge transport realizes. Besides these intrinsic factors, a significant role in practical devices is played by the static disorder (chemical impurities and structural defects) that leads to carrier trapping at various energies and time scales. In most of these cases, the charge carrier mobility in OFETs is rather small (0.1 - 20 cm2V-1s-1)),and in order to carefully and accurately characterize it,Hall effect measurements are necessary. Conventional Hall measurements are extremely challenging in systems with such low mobilities. Here,we present a novel Hall measurement technique that can be carried out in low magnetic fields with an amazing sensitivity,much greater than that attained in conventional Hall measurements. We apply this method to mobility measurements in a variety of OFETs with mobility as low as 0.3 cm2V-1s-1 and reveal various peculiarities of Hall effect in low-mobility systems. By taking advantage of this powerful new experimental capability, we have understood several ``mysteries'' of Hall effect observed by various groups in OFETs over the last decade. The work was financially supported by NSF DMR-1506609, and Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (No. K3-2016-004), decree dated 16th of March 2013, N 211.

Study of Current Measurement Method Based on Circular Magnetic Field Sensing Array

PubMed Central

Li, Zhenhua; Zhang, Siqiu; Wu, Zhengtian; Tao, Yuan

2018-01-01

Classic core-based instrument transformers are more prone to magnetic saturation. This affects the measurement accuracy of such transformers and limits their applications in measuring large direct current (DC). Moreover, protection and control systems may exhibit malfunctions due to such measurement errors. This paper presents a more accurate method for current measurement based on a circular magnetic field sensing array. The proposed measurement approach utilizes multiple hall sensors that are evenly distributed on a circle. The average value of all hall sensors is regarded as the final measurement. The calculation model is established in the case of magnetic field interference of the parallel wire, and the simulation results show that the error decreases significantly when the number of hall sensors n is greater than 8. The measurement error is less than 0.06% when the wire spacing is greater than 2.5 times the radius of the sensor array. A simulation study on the off-center primary conductor is conducted, and a kind of hall sensor compensation method is adopted to improve the accuracy. The simulation and test results indicate that the measurement error of the system is less than 0.1%. PMID:29734742

Study of Current Measurement Method Based on Circular Magnetic Field Sensing Array.

PubMed

Li, Zhenhua; Zhang, Siqiu; Wu, Zhengtian; Abu-Siada, Ahmed; Tao, Yuan

2018-05-05

Classic core-based instrument transformers are more prone to magnetic saturation. This affects the measurement accuracy of such transformers and limits their applications in measuring large direct current (DC). Moreover, protection and control systems may exhibit malfunctions due to such measurement errors. This paper presents a more accurate method for current measurement based on a circular magnetic field sensing array. The proposed measurement approach utilizes multiple hall sensors that are evenly distributed on a circle. The average value of all hall sensors is regarded as the final measurement. The calculation model is established in the case of magnetic field interference of the parallel wire, and the simulation results show that the error decreases significantly when the number of hall sensors n is greater than 8. The measurement error is less than 0.06% when the wire spacing is greater than 2.5 times the radius of the sensor array. A simulation study on the off-center primary conductor is conducted, and a kind of hall sensor compensation method is adopted to improve the accuracy. The simulation and test results indicate that the measurement error of the system is less than 0.1%.

Strong Enhancement of the Spin Hall Effect by Spin Fluctuations near the Curie Point of FexPt1 -x Alloys

NASA Astrophysics Data System (ADS)

Ou, Yongxi; Ralph, D. C.; Buhrman, R. A.

2018-03-01

Robust spin Hall effects (SHE) have recently been observed in nonmagnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely, side jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1 -x alloys near their Curie point, tunable with x . This results in a dampinglike spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 ±0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM /FePt interface, and determine the spin diffusion length in these FexPt1 -x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications.

Magnetic Field Tailored Annular Hall Thruster with Anode Layer

NASA Astrophysics Data System (ADS)

Lee, Seunghun; Kim, Holak; Kim, Junbum; Lim, Youbong; Choe, Wonho; Korea Institute of Materials Science Collaboration

2016-09-01

Plasma propulsion system is one of the key components for advanced missions of satellites as well as deep space exploration. A typical plasma propulsion system is Hall effect thruster that uses crossed electric and magnetic fields to ionize a propellant gas and to accelerate the ionized gas to generate momentum. In Hall thruster plasmas, magnetic field configuration is important due to the fact that electron confinement in the electromagnetic fields affects both plasma and ion beam characteristics as well as thruster performance parameters including thrust, specific impulse, power efficiency, and life time. In this work, development of an anode layer Hall thruster (TAL) with magnetic field tailoring has been attempted. The TAL is possible to keep discharge in 1 to 2 kilovolts of anode voltage, which is useful to obtain high specific impulse. The magnetic field tailoring is used to minimize undesirable heat dissipation and secondary electron emission from the wall surrounding the plasma. We will report 3 W and 200 W thrusters performances measured by a pendulum thrust stand according to the magnetic field configuration. Also, the measured result will be compared with the plasma diagnostics conducted by an angular Faraday probe, a retarding potential analyzer, and a ExB probe.

Impurity-generated non-Abelions

NASA Astrophysics Data System (ADS)

Simion, G.; Kazakov, A.; Rokhinson, L. P.; Wojtowicz, T.; Lyanda-Geller, Y. B.

2018-06-01

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an s -wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an s superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by characteristic disorder, gate voltage induced angular momentum splitting of impurity levels, and by a proximity superconducting gap. The phase diagram exhibits two ranges of gate voltage with conventional superconducting order separated by a gate voltage range with topological superconductivity. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana fermions. Ferromagnetic transitions in the fractional quantum Hall regime may lead to the formation and electrostatic control of higher order non-Abelian excitations.

Wood for sound.

PubMed

Wegst, Ulrike G K

2006-10-01

The unique mechanical and acoustical properties of wood and its aesthetic appeal still make it the material of choice for musical instruments and the interior of concert halls. Worldwide, several hundred wood species are available for making wind, string, or percussion instruments. Over generations, first by trial and error and more recently by scientific approach, the most appropriate species were found for each instrument and application. Using material property charts on which acoustic properties such as the speed of sound, the characteristic impedance, the sound radiation coefficient, and the loss coefficient are plotted against one another for woods. We analyze and explain why spruce is the preferred choice for soundboards, why tropical species are favored for xylophone bars and woodwind instruments, why violinists still prefer pernambuco over other species as a bow material, and why hornbeam and birch are used in piano actions.

High resolution study of magnetic ordering at absolute zero.

PubMed

Lee, M; Husmann, A; Rosenbaum, T F; Aeppli, G

2004-05-07

High resolution pressure measurements in the zero-temperature limit provide a unique opportunity to study the behavior of strongly interacting, itinerant electrons with coupled spin and charge degrees of freedom. Approaching the precision that has become the hallmark of experiments on classical critical phenomena, we characterize the quantum critical behavior of the model, elemental antiferromagnet chromium, lightly doped with vanadium. We resolve the sharp doubling of the Hall coefficient at the quantum critical point and trace the dominating effects of quantum fluctuations up to surprisingly high temperatures.

Large thermal Hall effect in a frustrated pyrochlore magnet

NASA Astrophysics Data System (ADS)

Hirschberger, Max; Krizan, Jason; Cava, Robert J.; Ong, N. Phuan

2015-03-01

In frustrated magnetism, the nature of the ground state and its elementary excitations are a matter of considerable debate. We present a detailed study of the full thermal conductivity tensor κij, including the Righi-Leduc (or thermal Hall) effect, in single crystals of the frustrated quantum spin-ice pyrochlore Tb2Ti2O7. The off-diagonal response κxy / T is large in this insulating material, despite the absence of itinerant electrons experiencing the Lorentz force. Our experiments over the temperature range of 0 . 8 - 200 K and in fields up to 14 T reveal a remarkable phenomenology: A sizeable field-linear Hall effect κxy / T is observed below 100 K, and its slope with respect to magnetic field increases strongly as we cool the sample. We observe significant curvature in the field dependence of κxy / T below 15 K. At the lowest temperatures, both κxx / T and the initial slope limB-->0 [κxy / TB ] are constant in temperature, behavior reminiscent of fermionic heat conduction in dirty metals. Experimental methods and verification of the intrinsic nature of the effect will be discussed. R.J.C. and N.P.O. are supported by a MURI Grant (ARO W911NF-12-1-0461) and by the US National Science Foundation (Grant Number DMR 0819860).

Influence of Hall Effect on Magnetic Control of Stagnation Point Heat Transfer

NASA Astrophysics Data System (ADS)

Poggie, Jonathan; Gaitonde, Datta

2001-11-01

Electromagnetic control is an appealing possibility for mitigating the thermal loads that occur in hypersonic flight. There was extensive research on this technique in the past (up to about 1970), but enthusiasm waned because of problems of system cost and weight. Renewed interest has arisen recently due to developments in the technology of super-conducting magnets and the understanding of the physics of weakly-ionized, non-equilibrium plasmas. A problem of particular interest is the reduction of stagnation point heating during atmospheric entry by magnetic deceleration of the flow in the shock layer. For the case of hypersonic flow over a sphere, a reduction in heat flux has been observed with the application of a dipole magnetic field (Poggie and Gaitonde, AIAA Paper 2001-0196). The Hall effect has a detrimental influence on this control scheme, tending to rotate the current vector out of the circumferential direction and to reduce the impact of the applied magnetic field on the fluid. In the present work we re-examine this problem by using modern computational methods to simulate flow past a hemispherical-nosed vehicle in which a axially-oriented magnetic dipole has been placed. The deleterious effects of the Hall current are characterized, and are observed to diminish when the surface of the vehicle is conducting.

Quantum Hall effect in dual gated BiSbTeSe2 topological insulator

NASA Astrophysics Data System (ADS)

Chong, Su Kong; Han, Kyu Bum; Nagaoka, Akira; Harmer, Jared; Tsuchikawa, Ryuichi; Sparks, Taylor D.; Deshpande, Vikram V.

The discovery of topological insulators (TIs) has expanded the family of Dirac materials and enables the probing of exotic matter such as Majorana fermions and magnetic monopoles. Different from conventional 2D electron gas, 3D TIs exhibit a gapped insulating bulk and gapless topological surface states as a result of the strong spin-orbit coupling. BiSbTeSe2 is also known to be a 3D TI with a large intrinsic bulk gap of about 0.3 eV and a single Dirac cone surface state. The highly bulk insulating BiSbTeSe2 permits surface dominated conduction, which is an ideal system for the study of quantum Hall effect (QHE). Due to the spin-momentum locking, the Dirac fermions at the topological surface states have a degeneracy of one. In the QH regime, the Hall conductance is quantized to (n + 1 / 2) e2 / h , where n is an integer and the factor of half is related to Berry curvature. In this work, we study the QHE 3D TI using a dual gated BiSbTeSe2 device. By tuning the chemical potentials on top and bottom surfaces, integer QHE with Landau filling factors, ν = 0, +/-1, and +/-2 are observed.

Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)

NASA Astrophysics Data System (ADS)

Hu, J.; Liu, T. J.; Qian, B.; Mao, Z. Q.

2013-09-01

We have studied the coupling of electronic and magnetic properties in Fe1+y(Te1-xSex) via systematic specific heat, magnetoresistivity (MR), and Hall coefficient measurements on two groups of samples with y=0.02 and 0.1. In the y=0.02 series, we find that the 0.09

DC conductivity with external magnetic field in hyperscaling violating geometry

NASA Astrophysics Data System (ADS)

Bhatnagar, Neha; Siwach, Sanjay

2018-02-01

We investigate the holographic DC conductivity of (2+1)-dimensional systems while considering hyperscaling violating geometry in bulk. We consider Einstein-Maxwell-dilaton system with two gauge fields and Liouville-type potential for dilaton. We also consider axionic fields in bulk to introduce momentum relaxation in the system. We apply an external magnetic field to study the response of the system and obtain analytic expressions for DC conductivity, Hall angle and (thermo)electric conductivity.

Performance of Solar Electric Powered Deep Space Missions Using Hall Thruster Propulsion

NASA Technical Reports Server (NTRS)

Witzberger, Kevin E.; Manzella, David

2006-01-01

Power limited, low-thrust trajectories were assessed for missions to Jupiter, Saturn, and Neptune utilizing a single Venus Gravity Assist (VGA) and a primary propulsion system based on either a 3-kW high voltage Hall thruster, of the type being developed by the NASA In-Space Propulsion Technology Program, or an 8-kW variant of this thruster. These Hall thrusters operate with specific impulses below 3,000 seconds. A trade study was conducted to examine mission parameters that include: net delivered mass (NDM), beginning-of-life (BOL) solar array power, heliocentric transfer time, required launch vehicle, number of operating thrusters, and throttle profile. The top performing spacecraft configuration was defined to be the one that delivered the highest mass for a range of transfer times. In order to evaluate the potential future benefit of using next generation Hall thrusters as the primary propulsion system, comparisons were made with the advanced state-of-the-art (ASOA), 7-kW, 4,100 second NASA's Evolutionary Xenon Thruster (NEXT) for the same mission scenarios. For the BOL array powers considered in this study (less than 30 kW), the results show that the performance of the Hall thrusters, relative to NEXT, is largely dependant on the performance capability of the launch vehicle, and that at least a 10 percent performance gain, equating to at least an additional 200 kg dry mass at each target planet, is achieved over the higher specific impulse NEXT when launched on an Atlas 551.

Safety halls--an evaluation.

PubMed

Nyberg, Anders; Gregersen, Nils Petter; Nolén, Sixten; Engström, Inger

2005-01-01

In most countries, drivers licensing systems usually include teaching some aspects of using safety equipment (e.g., airbags and seat belts). However, there is now evidence worldwide that such education is inadequate, as indicated by, for example, the overrepresentation of young drivers who do not use seat belts. A randomized controlled study was conducted in Sweden to evaluate the effects of visiting a facility known as a "safety hall" in combination with the mandatory skid training. The results were assessed to determine the effects of the knowledge and attitudes of learner drivers in the following subjects: airbags, securing loads, seat belts, sitting posture, speed, and tires. An experimental group and a control group comprising 658 and 668 learners, respectively, answered identical questionnaires on three different occasions (pretest, posttest 1, and posttest 2). The results show that, for most of the topics considered, knowledge and attitudes in both groups were better at posttest 2 than at the pretest, and in general, the best knowledge and attitudes were found in the experimental group. The combined safety/skid training seems to have had the greatest effect on seat belts and loads. The findings also indicate that the safety halls can be further improved to achieve an even better effect. The use of safety halls has improved the knowledge and attitudes of learner drivers concerning several important areas related to traffic safety. Since knowledge and attitudes are important predictors of behavior, implementing safety halls can be expected to lead to improvements, especially regarding the use of safety belts and securing loads.

The Enhancement of spin Hall torque efficiency and Reduction of Gilbert damping in spin Hall metal/normal metal/ferromagnetic trilayers

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Pai, Chi-Feng; Ralph, Daniel C.; Buhrman, Robert A.

2015-03-01

The spin Hall effect (SHE) in ferromagnet/heavy metal bilayer structures has been demonstrated to be a powerful means for producing pure spin currents and for exerting spin-orbit damping-like and field-like torques on the ferromagnetic layer. Large spin Hall (SH) angles have been reported for Pt, beta-Ta and beta-W films and have been utilized to achieve magnetic switching of in-plane and out-of-plane magnetized nanomagnets, spin torque auto-oscillators, and the control of high velocity domain wall motion. For many of the proposed applications of the SHE it is also important to achieve an effective Gilbert damping parameter that is as low as possible. In general the spin orbit torques and the effective damping are predicted to depend directly on the spin-mixing conductance of the SH metal/ferromagnet interface. This opens up the possibility of tuning these properties with the insertion of a very thin layer of another metal between the SH metal and the ferromagnet. Here we will report on experiments with such trilayer structures in which we have observed both a large enhancement of the spin Hall torque efficiency and a significant reduction in the effective Gilbert damping. Our results indicate that there is considerable opportunity to optimize the effectiveness and energy efficiency of the damping-like torque through engineering of such trilayer structures. Supported in part by NSF and Samsung Electronics Corporation.

Fully nonlinear development of the most unstable goertler vortex in a three dimensional boundary layer

NASA Technical Reports Server (NTRS)

Otto, S. R.; Bassom, Andrew P.

1992-01-01

The nonlinear development is studied of the most unstable Gortler mode within a general 3-D boundary layer upon a suitably concave surface. The structure of this mode was first identified by Denier, Hall and Seddougui (1991) who demonstrated that the growth rate of this instability is O(G sup 3/5) where G is the Gortler number (taken to be large here), which is effectively a measure of the curvature of the surface. Previous researchers have described the fate of the most unstable mode within a 2-D boundary layer. Denier and Hall (1992) discussed the fully nonlinear development of the vortex in this case and showed that the nonlinearity causes a breakdown of the flow structure. The effect of crossflow and unsteadiness upon an infinitesimal unstable mode was elucidated by Bassom and Hall (1991). They demonstrated that crossflow tends to stabilize the most unstable Gortler mode, and for certain crossflow/frequency combinations the Gortler mode may be made neutrally stable. These vortex configurations naturally lend themselves to a weakly nonlinear stability analysis; work which is described in a previous article by the present author. Here we extend the ideas of Denier and Hall (1992) to the three-dimensional boundary layer problem. It is found that the numerical solution of the fully nonlinear equations is best conducted using a method which is essentially an adaption of that utilized by Denier and Hall (1992). The influence of crossflow and unsteadiness upon the breakdown of the flow is described.

Resonant spin Hall effect in two dimensional electron gas

NASA Astrophysics Data System (ADS)

Shen, Shun-Qing

2005-03-01

Remarkable phenomena have been observed in 2DEG over last two decades, most notably, the discovery of integer and fractional quantum Hall effect. The study of spin transport provides a good opportunity to explore spin physics in two-dimensional electron gas (2DEG) with spin-orbit coupling and other interaction. It is already known that the spin-orbit coupling leads to a zero-field spin splitting, and competes with the Zeeman spin splitting if the system is subjected to a magnetic field perpendicular to the plane of 2DEG. The result can be detected as beating of the Shubnikov-de Haas oscillation. Very recently the speaker and his collaborators studied transport properties of a two-dimensional electron system with Rashba spin-orbit coupling in a perpendicular magnetic field. The spin-orbit coupling competes with the Zeeman splitting to generate additional degeneracies between different Landau levels at certain magnetic fields. It is predicted theoretically that this degeneracy, if occurring at the Fermi level, gives rise to a resonant spin Hall conductance, whose height is divergent as 1/T and whose weight is divergent as -lnT at low temperatures. The charge Hall conductance changes by 2e^2/h instead of e^2/h as the magnetic field changes through the resonant point. The speaker will address the resonance condition, symmetries in the spin-orbit coupling, the singularity of magnetic susceptibility, nonlinear electric field effect, the edge effect and the disorder effect due to impurities. This work was supported by the Research Grants Council of Hong Kong under Grant No.: HKU 7088/01P. *S. Q. Shen, M. Ma, X. C. Xie, and F. C. Zhang, Phys. Rev. Lett. 92, 256603 (2004) *S. Q. Shen, Y. J. Bao, M. Ma, X. C. Xie, and F. C. Zhang, cond-mat/0410169

Wave-function description of conductance mapping for a quantum Hall electron interferometer

NASA Astrophysics Data System (ADS)

Kolasiński, K.; Szafran, B.

2014-04-01

Scanning gate microscopy of quantum point contacts (QPC) in the integer quantum Hall regime is considered in terms of the scattering wave functions with a finite-difference implementation of the quantum transmitting boundary approach. Conductance (G) maps for a clean QPC as well as for a system including an antidot within the QPC constriction are evaluated. The steplike locally flat G maps for clean QPCs turn into circular resonances that are reentrant in an external magnetic field when the antidot is introduced to the constriction. The current circulation around the antidot and the spacing of the resonances at the magnetic field scale react to the probe approaching the QPC. The calculated G maps with a rigid but soft antidot potential reproduce the features detected recently in the electron interferometer [F. Martins et al., Sci. Rep. 3, 1416 (2013), 10.1038/srep01416].

Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions

NASA Astrophysics Data System (ADS)

Kumar, Chandan; Kuiri, Manabendra; Das, Anindya

2018-02-01

We report an observation of conductance fluctuations (CFs) in the bipolar regime of quantum hall (QH) plateaus in graphene (p-n-p/n-p-n) devices. The CFs in the bipolar regime are shown to decrease with increasing bias and temperature. At high temperature (above 7 K) the CFs vanishes completely and the flat quantized plateaus are recovered in the bipolar regime. The values of QH plateaus are in theoretical agreement based on full equilibration of chiral channels at the p-n junction. The amplitude of CFs for different filling factors follows a trend predicted by the random matrix theory. Although, there are mismatch in the values of CFs between the experiment and theory but at higher filling factors the experimental values become closer to the theoretical prediction. The suppression of CFs and its dependence has been understood in terms of time dependent disorders present at the p-n junctions.

Design, Qualification and Lessons Learned of the Shutter Calibration Mechanism for EnMAP Mission

NASA Astrophysics Data System (ADS)

Schmidt, Tilo; Muller, Silvio; Bergander, Arvid; Zajac, Kai; Seifart, Klaus

2015-09-01

The Shutter Calibration Mechanism (SCM) Assembly is one of three mechanisms which are developed by HTS for the EnMAP instrument in subcontract to OHB System AG Munich. EnMAP is the Environmental Mapping and Analysis Program of the German Space Agency DLR.The binary rotary encoder of the SCM using hall-effect sensors was already presented during ESMATS 2011. This paper summarizes the main functions and design features of the Hardware and focuses on qualification testing which has finished successfully in 2014. Of particular interest is the functional testing of the main drive including the precise hall-effect position sensing system and the test of the fail safe mechanism. In addition to standard test campaign required for QM also a shock emission measurement of the fail safe mechanism activation was conducted.Test conduction and results will be presented with focus on deviations from the expected behaviour, mitigation measures and on lessons learned.

Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

2018-03-01

Anatase TiO2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO2 and LaAlO3 (001), which arises for LaO-terminated LaAlO3, while the AlO2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm2 (V s)-1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ˜4 V.

Effect of preparation procedure and nanostructuring on the thermoelectric properties of the lead telluride-based material system AgPb{sub m}BiTe{sub 2+m} (BLST-m)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Falkenbach, Oliver; Koch, Guenter; Schlecht, Sabine

2016-06-07

We report on the preparation and thermoelectric properties of the quaternary system AgPb{sub m}BiTe{sub 2+m} (Bismuth-Lead-Silver-Tellurium, BLST-m) that were nanostructured by mechanical alloying. Nanopowders of various compositions were compacted by three different methods: cold pressing/annealing, hot pressing, and short term sintering. The products are compared with respect to microstructure and sample density. The thermoelectric properties were measured: thermal conductivity in the temperature range from 300 K to 800 K and electrical conductivity and Seebeck coefficient between 100 K and 800 K. The compacting method and the composition had a substantial impact on carrier concentration and mobility as well as on the thermoelectric parameters. Roommore » temperature Hall measurements yielded carrier concentrations in the order of 10{sup 19 }cm{sup −3}, slightly increasing with increasing content of the additive silver bismuth telluride to the lead telluride base. ZT values close to the ones of bulk samples were achieved. X-ray diffraction and transmission electron microscopy (TEM) showed macroscopically homogeneous distributions of the constituting elements inside the nanopowders ensembles, indicating a solid solution. However, high resolution transmission electron microscopy (HRTEM) revealed disorder on the nanoscale inside individual nanopowders grains.« less

Infrared study of the absorption edge of {beta}-InN films grown on GaN/MgO structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.

2010-07-15

Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that {beta}-InN films have large free-carrier concentrations present (>10{sup 19} cm{sup -3}), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observedmore » temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in {beta}-InN, analogous to wurtzite InN, follows a nonparabolic behavior.« less

Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

NASA Astrophysics Data System (ADS)

Pérez-Caro, M.; Rodríguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

2010-07-01

Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>1019 cm-3), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

Molecular composition and extinction coefficient of native botulinum neurotoxin complex produced by Clostridium botulinum hall A strain.

PubMed

Bryant, Anne-Marie; Davis, Jenny; Cai, Shuowei; Singh, Bal Ram

2013-02-01

Seven distinct strains of Clostridium botulinum (type A to G) each produce a stable complex of botulinum neurotoxin (BoNT) along with neurotoxin-associated proteins (NAPs). Type A botulinum neurotoxin (BoNT/A) is produced with a group of NAPs and is commercially available for the treatment of numerous neuromuscular disorders and cosmetic purposes. Previous studies have indicated that BoNT/A complex composition is specific to the strain, the method of growth and the method of purification; consequently, any variation in composition of NAPs could have significant implications to the effectiveness of BoNT based therapeutics. In this study, a standard analytical technique using sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE) and densitometry analysis was developed to accurately analyze BoNT/A complex from C. botulinum type A Hall strain. Using 3 batches of BoNT/A complex the molar ratio was determined as neurotoxin binding protein (NBP, 124 kDa), heavy chain (HC, 90 kDa), light chain (LC, 53 kDa), NAP-53 (50 kDa), NAP-33 (36 kDa), NAP-22 (24 kDa), NAP-17 (17 kDa) 1:1:1:2:3:2:2. With Bradford, Lowry, bicinchoninic acid (BCA) and spectroscopic protein estimation methods, the extinction coefficient of BoNT/A complex was determined as 1.54 ± 0.26 (mg/mL)(-1)cm(-1). These findings of a reproducible BoNT/A complex composition will aid in understanding the molecular structure and function of BoNT/A and NAPs.

Synthesis and characterization of indium doped La{sub 3}Co{sub 4}Sn{sub 13} skutterudite superconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neha, P.; Srivastava, P.; Shruti,

2016-05-06

We report the synthesis and characterization of a novel superconductor La{sub 3}Co{sub 4}Sn{sub 12.35}In{sub 0.65} by Indium doping at Tin site in parent compound La{sub 3}Co{sub 4}Sn{sub 13}. We observe enhanced T{sub c} along with improved superconducting properties as onset compared to parent compound. By transport measurements we get superconducting transition with T{sub c}{sup onset} = 4.7 K and T{sub c}{sup zero} = 3.2 K. In magnetization measurements (ZFC-FC) superconducting transition is observed at 5.1 K. Upper critical field (H{sub c2}) and lower critical field (H{sub c1}) calculated by magneto resistance and M-H loop measurement are found to be 1.65more » T and 0.0026 T respectively. Hall measurement shows the majority charge carrier as electrons with carrier density of the order of 10{sup 19} cm{sup −3}. TEP measurement also support the Hall data as the Seebeck coefficient is negative over whole temperature range of measurement.« less

Phase transitions, magnetotransport and magnetocaloric effects in a new family of quaternary Ni-Mn-In-Z Heusler alloys.

PubMed

Kazakov, Alexander; Prudnikov, Valerii; Granovsky, Alexander; Perov, Nikolai; Dubenko, Igor; Pathak, Arjun Kumar; Samanta, Tapas; Stadler, Shane; Ali, Naushad; Zhukov, Arcady; Ilyin, Maxim; Gonzalez, Julian

2012-09-01

The magnetic, magnetotransport, and magnetocaloric properties near compound phase transitions in Ni50Mn35In14Z (Z = In, Ge, Al), and Ni48Co2Mn35In15 Heusler alloys have been studied using VSM and SQUID magnetometers (at magnetic fields (H) up to 5 T), four-probe method (at H = 0.005-1.5 T), and an adiabatic magnetocalorimeter (for H changes up to deltaH = 1.8 T), respectively. The martensitic transformation (MT) is accompanied by large magnetoresistance (up to 70%), a significant change in resistivity (up to 200%), and a sign reversal of the ordinary Hall effect coefficient, all related to a strong change in the electronic spectrum at the MT. The field dependences of the Hall resistance are complex in the vicinity of the MT, indicating a change in the relative concentrations of the austenite and martensite phases at strong fields. Negative and positive changes in adiabatic temperatures of about -2 K and +2 K have been observed in the vicinity of MT and Curie temperatures, respectively, for deltaH = 1.8 T.

Anomalous Transport Properties via the Competition between the RKKY Interaction and the Kondo Effect in CexLa1-xRu2Si2

NASA Astrophysics Data System (ADS)

Shimizu, Yasunobu; Matsumoto, Yuji; Aoki, Kosuke; Kimura, Noriaki; Aoki, Haruyoshi

2012-04-01

We have performed an extensive study on the electronic transport properties of CexLa1-xRu2Si2. At zero field or under the fields parallel to the hard axis of magnetization, the residual resistivity, magnetoresistivity and Hall resistivity are found to be most enhanced around x = 0.85 in the antiferromagnetic state. On the other hand, the high magnetic field along the easy axis is effective to suppress the enhancement. The coherence temperature derived from the temperature variation of Hall coefficient becomes equal to the antiferromagnetic transition temperature at x = 0.85, indicating that the competition between the coherence of the Kondo singlet and the long range magnetic order is responsible for the enhancement. The competition is likely to affect also the magnetic properties in the antiferromagnetic state. The comparison with the de Haas--van Alphen effect measurements suggests that the enhancement is likely to be due to the increase in scattering. The present results are compared with the theory by Hattori and Miyake.

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arapov, Yu. G.; Gudina, S. V.; Klepikova, A. S., E-mail: klepikova@imp.uran.ru

2017-02-15

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields Ð’ = 0–16 T and temperatures T = 0.05–4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.

Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

NASA Astrophysics Data System (ADS)

Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

2018-05-01

Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

Influence of Hall Current and Viscous Dissipation on Pressure Driven Flow of Pseudoplastic Fluid with Heat Generation: A Mathematical Study.

PubMed

Noreen, Saima; Qasim, Muhammad

2015-01-01

In this paper, we study the influence of heat sink (or source) on the peristaltic motion of pseudoplastic fluid in the presence of Hall current, where channel walls are non-conducting in nature. Flow analysis has been carried out under the approximations of a low Reynolds number and long wavelength. Coupled equations are solved using shooting method for numerical solution for the axial velocity function, temperature and pressure gradient distributions. We analyze the influence of various interesting parameters on flow quantities. The present study can be considered as a mathematical presentation of the dynamics of physiological organs with stones.

Laser Annealing of Ion Implanted HgCdTe.

DTIC Science & Technology

1984-10-22

are /A 󈧳e10 4cm 2V- sec- and .(p) OA 103m mV - sec respectively. The above observations all lead to the conclusion that the donors in as-implanted...conductance. ". 5 Measured Hall Constante Hall Mobility Conductivuty Parameters type 2. Cb- (c2 v- - RH (cm.C ) Ac.v* ) Sample ....- 2 3 -1 -1A RH ...4.29.10 U=1.03.103 c(l -)- x=0.28 P ( 3 16 2.4 unimplanted ,,c -2-.l A RH .3.08"l0Z " .sYn-1 ) . Boron Implantation n n (cm a 16s. 4 48 ൒ U.12-10 1S

Energy Input to the Auroral Ionosphere.

DTIC Science & Technology

1980-02-29

I s ionl ratev we (’tin-i Is too high; litl v lu, it woold kieep Ev itit t he ra tige of rl 40 tiV/ hi. :v.Itl!; et atl. 1 1911 1 anld (it la iI...to 170-km altitude. The Hall conductivity (solid line) is nearly always greater than the Pederson conductivity (dashed line). Fig. 6b. Calculated

Does providing nutrition information at vending machines reduce calories per item sold?

PubMed

Dingman, Deirdre A; Schulz, Mark R; Wyrick, David L; Bibeau, Daniel L; Gupta, Sat N

2015-02-01

In 2010, the United States (US) enacted a restaurant menu labeling law. The law also applied to vending machine companies selling food. Research suggested that providing nutrition information on menus in restaurants might reduce the number of calories purchased. We tested the effect of providing nutrition information and 'healthy' designations to consumers where vending machines were located in college residence halls. We conducted our study at one university in Southeast US (October-November 2012). We randomly assigned 18 vending machines locations (residence halls) to an intervention or control group. For the intervention we posted nutrition information, interpretive signage, and sent a promotional email to residents of the hall. For the control group we did nothing. We tracked sales over 4 weeks before and 4 weeks after we introduced the intervention. Our intervention did not change what the residents bought. We recommend additional research about providing nutrition information where vending machines are located, including testing formats used to present information.

The cultural psychology endeavor to make culture central to psychology: Comment on Hall et al. (2016).

PubMed

Dvorakova, Antonie

2016-12-01

When Hall, Yip, and Zárate (2016) suggested that cultural psychology focused on reporting differences between groups, they described comparative research conducted in other fields, including cross-cultural psychology. Cultural psychology is a different discipline with methodological approaches reflecting its dissimilar goal, which is to highlight the cultural grounding of human psychological characteristics, and ultimately make culture central to psychology in general. When multicultural psychology considers, according to Hall et al., the mechanisms of culture's influence on behavior, it treats culture the same way as cross-cultural psychology does. In contrast, cultural psychology goes beyond treating culture as an external variable when it proposes that culture and psyche are mutually constitutive. True psychology of the human experience must encompass world populations through research of the ways in which (a) historically grounded sociocultural contexts enable the distinct meaning systems that people construct, and (b) these systems simultaneously guide the human formation of the environments. (PsycINFO Database Record (c) 2016 APA, all rights reserved).

Optically adjustable valley Hall current in single-layer transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Pavlidis, Dimitris; Shi, Junxia

2018-02-01

The illumination of a single-layer transition metal dichalcogenide with an elliptically polarized light beam is shown to give rise to a differential rate of inter-band carrier excitation between the valence and conduction states around the valley edges, K and K' . This rate with a linear dependence on the beam ellipticity and inverse of the optical gap manifests as an asymmetric Fermi distribution between the valleys or a non-equilibrium population which under an external field and a Berry curvature induced anomalous velocity, results in an externally tunable finite valley Hall current. Surface imperfections that influence the excitation rates are included through the self-consistent Born approximation. Further, we describe applications centered around circular dichroism, quantum computing, and spin torque via optically excited spin currents within the framework of the suggested formalism. A closing summary points to the possibility of extending the calculations to composite charged particles like trions. The role of the substrate in renormalizing the fundamental band gap and moderating the valley Hall current is also discussed.

Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region

NASA Astrophysics Data System (ADS)

Ji, Yang; Miao, J.; Zhu, Y. M.; Meng, K. K.; Xu, X. G.; Chen, J. K.; Wu, Y.; Jiang, Y.

2018-06-01

We demonstrate the negative spin Hall magnetoresistance (SMR) observed in antiferromagnetic Cr2O3/Ta bilayers at low temperature. The SMR signals are changed from the positive to negative magnitude when monotonously reducing the temperature from 300 K to 50 K. The positive and negative SMR signals are expected to be associated with the two different ways for injection of the spin current, into the boundary ferromagnetic region and the bulk antiferromagnetic region of α-Cr2O3 (0001), respectively. The slopes of the abnormal Hall curves exhibit the same sign with the SMR signal. From the SMR ratio under 3 T, the spin mixing conductance at the Cr2O3/Ta interface is estimated to be 1.12 × 1014 Ω-1.m-2, which is comparable to the one observed in the Y3Fe5O12(YIG)/Pt structure and our early results of the Cr2O3/W structure.

Quantum spin Hall state in monolayer 1T '-WTe 2

DOE PAGES

Tang, Shujie; Zhang, Chaofan; Wong, Dillon; ...

2017-06-26

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T '-WTe 2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulkmore » bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T '-WTe 2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).« less

Quantum spin Hall state in monolayer 1T '-WTe 2

DOE PAGES

Tang, Shujie; Zhang, Chaofan; Wong, Dillon; ...

2017-06-26

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T '-WTe 2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulkmore » bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Finally, our results establish monolayer 1T '-WTe 2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).« less

Phase transition and field effect topological quantum transistor made of monolayer MoS2

NASA Astrophysics Data System (ADS)

Simchi, H.; Simchi, M.; Fardmanesh, M.; Peeters, F. M.

2018-06-01

We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q 2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q 2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q 2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.

Computational manipulation of a radiative MHD flow with Hall current and chemical reaction in the presence of rotating fluid

NASA Astrophysics Data System (ADS)

Alias Suba, Subbu; Muthucumaraswamy, R.

2018-04-01

A numerical analysis of transient radiative MHD(MagnetoHydroDynamic) natural convective flow of a viscous, incompressible, electrically conducting and rotating fluid along a semi-infinite isothermal vertical plate is carried out taking into consideration Hall current, rotation and first order chemical reaction.The coupled non-linear partial differential equations are expressed in difference form using implicit finite difference scheme. The difference equations are then reduced to a system of linear algebraic equations with a tri-diagonal structure which is solved by Thomas Algorithm. The primary and secondary velocity profiles, temperature profile, concentration profile, skin friction, Nusselt number and Sherwood Number are depicted graphically for a range of values of rotation parameter, Hall parameter,magnetic parameter, chemical reaction parameter, radiation parameter, Prandtl number and Schmidt number.It is recognized that rate of heat transfer and rate of mass transfer decrease with increase in time but they increase with increasing values of radiation parameter and Schmidt number respectively.

Defect control of conventional and anomalous electron transport at complex oxide interfaces

DOE PAGES

Gunkel, F.; Bell, Chris; Inoue, Hisashi; ...

2016-08-30

Using low-temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO 3/SrTiO 3 (100) interfaces. Field-dependent Hall characteristics (2–300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10 K. Considering these two sources of nonlinearity, we suggest a phenomenological modelmore » capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. In conclusion, the most pronounced AHE is found at increased growth pressure and, thus, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration.« less

Combination of acoustical radiosity and the image source method.

PubMed

Koutsouris, Georgios I; Brunskog, Jonas; Jeong, Cheol-Ho; Jacobsen, Finn

2013-06-01

A combined model for room acoustic predictions is developed, aiming to treat both diffuse and specular reflections in a unified way. Two established methods are incorporated: acoustical radiosity, accounting for the diffuse part, and the image source method, accounting for the specular part. The model is based on conservation of acoustical energy. Losses are taken into account by the energy absorption coefficient, and the diffuse reflections are controlled via the scattering coefficient, which defines the portion of energy that has been diffusely reflected. The way the model is formulated allows for a dynamic control of the image source production, so that no fixed maximum reflection order is required. The model is optimized for energy impulse response predictions in arbitrary polyhedral rooms. The predictions are validated by comparison with published measured data for a real music studio hall. The proposed model turns out to be promising for acoustic predictions providing a high level of detail and accuracy.

Random walk study of electron motion in helium in crossed electromagnetic fields

NASA Technical Reports Server (NTRS)

Englert, G. W.

1972-01-01

Random walk theory, previously adapted to electron motion in the presence of an electric field, is extended to include a transverse magnetic field. In principle, the random walk approach avoids mathematical complexity and concomitant simplifying assumptions and permits determination of energy distributions and transport coefficients within the accuracy of available collisional cross section data. Application is made to a weakly ionized helium gas. Time of relaxation of electron energy distribution, determined by the random walk, is described by simple expressions based on energy exchange between the electron and an effective electric field. The restrictive effect of the magnetic field on electron motion, which increases the required number of collisions per walk to reach a terminal steady state condition, as well as the effect of the magnetic field on electron transport coefficients and mean energy can be quite adequately described by expressions involving only the Hall parameter.

Skew scattering dominated anomalous Hall effect in Co x (MgO)100-x granular thin films

NASA Astrophysics Data System (ADS)

Zhang, Qiang; Wen, Yan; Zhao, Yuelei; Li, Peng; He, Xin; Zhang, Junli; He, Yao; Peng, Yong; Yu, Ronghai; Zhang, Xixiang

2017-10-01

We investigated the mechanism(s) of the anomalous Hall effect (AHE) in magnetic granular materials by fabricating 100 nm-thick thin films of Co x (MgO)100-x with a Co volume fraction of 34  ⩽  x  ⩽  100 using co-sputtering at room temperature. We measured the temperature dependence of longitudinal resistivity ({{ρ }xx} ) and anomalous Hall resistivity ({{ρ }AHE} ) from 5 K to 300 K in all samples. We found that when x decreases from 100 to 34, the values of {{ρ }xx} and {{ρ }AHE} respectively increased by about four and three orders in magnitude. By linearly fitting the data, obtained at 5 K, of anomalous Hall coefficient ({{R}s} ) and of {{ρ }xx} to log({{R}s})˜ γ log({{ρ }xx}) , we found that our results perfectly fell on a straight line with a slope of γ = 0.97  ±  0.02. This fitting value of γ in {{R}s}\\propto ρ xxγ ~ clearly suggests that skew scattering dominated the AHE in this granular system. To explore the effect of the scattering on the AHE, we performed the same measurements on annealed samples. We found that although both {{ρ }xx} and {{ρ }AHE} significantly reduced after annealing, the correlation between them was almost the same, which was confirmed by the fitted value, γ   =  0.99  ±  0.03. These data strongly suggest that the AHE originates from the skew scattering in Co-MgO granular thin films no matter how strong the scattering of electrons by the interfaces and defects is. This observation may be of importance to the development of spintronic devices based on MgO.

Non-Fermi-liquid and topological states with strong spin-orbit coupling.

PubMed

Moon, Eun-Gook; Xu, Cenke; Kim, Yong Baek; Balents, Leon

2013-11-15

We argue that a class of strongly spin-orbit-coupled materials, including some pyrochlore iridates and the inverted band gap semiconductor HgTe, may be described by a minimal model consisting of the Luttinger Hamiltonian supplemented by Coulomb interactions, a problem studied by Abrikosov and collaborators. It contains twofold degenerate conduction and valence bands touching quadratically at the zone center. Using modern renormalization group methods, we update and extend Abrikosov's classic work and show that interactions induce a quantum critical non-Fermi-liquid phase, stable provided time-reversal and cubic symmetries are maintained. We determine the universal power-law exponents describing various observables in this Luttinger-Abrikosov-Beneslavskii state, which include conductivity, specific heat, nonlinear susceptibility, and the magnetic Gruneisen number. Furthermore, we determine the phase diagram in the presence of cubic and/or time-reversal symmetry breaking perturbations, which includes a topological insulator and Weyl semimetal phases. Many of these phases possess an extraordinarily large anomalous Hall effect, with the Hall conductivity scaling sublinearly with magnetization σ(xy)∼M0.51.

Quantum anomalous Hall phase and half-metallic phase in ferromagnetic (111) bilayers of 4 d and 5 d transition metal perovskites

NASA Astrophysics Data System (ADS)

Chandra, Hirak Kumar; Guo, Guang-Yu

2017-04-01

Extraordinary electronic phases can form in artificial oxide heterostructures, which will provide a fertile ground for new physics and also give rise to novel device functions. Based on a systematic first-principles density functional theory study of the magnetic and electronic properties of the (111) superlattices (ABO3) 2/(AB'O3)10 of 4 d and 5 d transition metal perovskite (B = Ru, Rh, Ag, Re, Os, Ir, Au; AB'O3=LaAlO3 , SrTiO3) , we demonstrate that due to quantum confinement, bilayers (LaBO3)2 (B = Ru, Re, Os) and (SrBO3)2 (B = Rh, Os, Ir) are ferromagnetic with ordering temperatures up to room temperature. In particular, bilayer (LaOsO3)2 is an exotic spin-polarized quantum anomalous Hall insulator, while the other ferromagnetic bilayers are metallic with large Hall conductances comparable to the conductance quantum. Furthermore, bilayers (LaRuO3)2 and (SrRhO3)2 are half metallic, while the bilayer (SrIrO3)2 exhibits a peculiar colossal magnetic anisotropy. Our findings thus show that 4 d and 5 d metal perovskite (111) bilayers are a class of quasi-two-dimensional materials for exploring exotic quantum phases and also for advanced applications such as low-power nanoelectronics and oxide spintronics.

Global characteristics of auroral Hall currents derived from the Swarm constellation: dependences on season and IMF orientation

NASA Astrophysics Data System (ADS)

Huang, Tao; Lühr, Hermann; Wang, Hui

2017-11-01

On the basis of field-aligned currents (FACs) and Hall currents derived from high-resolution magnetic field data of the Swarm constellation, the average characteristics of these two current systems in the auroral regions are comprehensively investigated by statistical methods. This is the first study considering both current types determined simultaneously by the same spacecraft in both hemispheres. The FAC distribution, derived from the novel Swarm dual-spacecraft approach, reveals the well-known features of Region 1 (R1) and Region 2 (R2) FACs. At high latitudes, Region 0 (R0) FACs appear on the dayside. Their flow direction, up or down, depends on the orientation of the interplanetary magnetic field (IMF) By component. Of particular interest is the distribution of auroral Hall currents. The prominent auroral electrojets are found to be closely controlled by the solar wind input, but we find no dependence of their intensity on the IMF By orientation. The eastward electrojet is about 1.5 times stronger in local summer than in winter. Conversely, the westward electrojet shows less dependence on season. As to higher latitudes, part of the electrojet current is closed over the polar cap. Here the seasonal variation of conductivity mainly controls the current density. During local summer of the Northern Hemisphere, there is a clear channeling of return currents over the polar cap. For positive (negative) IMF By a dominant eastward (westward) Hall current circuit is formed from the afternoon (morning) electrojet towards the dawn side (dusk side) polar cap return current. The direction of polar cap Hall currents in the noon sector depends directly on the orientation of the IMF By. This is true for both signs of the IMF Bz component. Comparable Hall current distributions can be observed in the Southern Hemisphere but for opposite IMF By signs. Around the midnight sector the westward substorm electrojet is dominating. As expected, it is highly dependent on magnetic activity, but it shows only little response to season and IMF By polarity. An important finding is that all the IMF By dependences of FACs and Hall currents practically disappear in the dark winter hemisphere.

DETERMINATION OF PESTICIDES AND PCB'S IN INDUSTRIAL AND MUNICIPAL WASTEWATERS

EPA Science Inventory

Steps in the procedure for the analysis of 25 chlorinated pesticides and polychlorinated biphenyls were studied. Two gas chromatographic columns and two detectors (electron capture and Hall electrolytic conductivity) were evaluated. Extractions were performed with two solvents (d...

Thermoelectric study of crossroads material MnTe via sulfur doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Wenjie, E-mail: xie@imw.uni-stuttgart.de; Populoh, Sascha; Sagarna, Leyre

2014-03-14

Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe{sub 1-x}S{sub x} samples with nominal S content of x = 0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe{sub 1-x}S{sub x} samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivitymore » measurements from 300 K to 773 K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe{sub 0.9}S{sub 0.1} was substantially enhanced over the pristine sample near 400 K, while the improvement of ZT became marginal at elevated temperatures. A ZT ∼ 0.65 at 773 K was obtained in all three samples.« less

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO 2 transparent semiconducting films prepared by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-10-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2:Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

Generalized Kubo formulas for the transport properties of incommensurate 2D atomic heterostructures

NASA Astrophysics Data System (ADS)

Cancès, Eric; Cazeaux, Paul; Luskin, Mitchell

2017-06-01

We give an exact formulation for the transport coefficients of incommensurate two-dimensional atomic multilayer systems in the tight-binding approximation. This formulation is based upon the C* algebra framework introduced by Bellissard and collaborators [Coherent and Dissipative Transport in Aperiodic Solids, Lecture Notes in Physics (Springer, 2003), Vol. 597, pp. 413-486 and J. Math. Phys. 35(10), 5373-5451 (1994)] to study aperiodic solids (disordered crystals, quasicrystals, and amorphous materials), notably in the presence of magnetic fields (quantum Hall effect). We also present numerical approximations and test our methods on a one-dimensional incommensurate bilayer system.

Combinatorial theory of Macdonald polynomials I: proof of Haglund's formula.

PubMed

Haglund, J; Haiman, M; Loehr, N

2005-02-22

Haglund recently proposed a combinatorial interpretation of the modified Macdonald polynomials H(mu). We give a combinatorial proof of this conjecture, which establishes the existence and integrality of H(mu). As corollaries, we obtain the cocharge formula of Lascoux and Schutzenberger for Hall-Littlewood polynomials, a formula of Sahi and Knop for Jack's symmetric functions, a generalization of this result to the integral Macdonald polynomials J(mu), a formula for H(mu) in terms of Lascoux-Leclerc-Thibon polynomials, and combinatorial expressions for the Kostka-Macdonald coefficients K(lambda,mu) when mu is a two-column shape.

General cause of sheath instability identified for low collisionality plasmas in devices with secondary electron emission.

PubMed

Campanell, M D; Khrabrov, A V; Kaganovich, I D

2012-06-08

A condition for sheath instability due to secondary electron emission (SEE) is derived for low collisionality plasmas. When the SEE coefficient of the electrons bordering the depleted loss cone in energy space exceeds unity, the sheath potential is unstable to a negative perturbation. This result explains three different instability phenomena observed in Hall thruster simulations including a newly found state with spontaneous ∼20  MHz oscillations. When instabilities occur, the SEE propagating between the walls becomes the dominant contribution to the particle flux, energy loss and axial transport.

Thermoelectric properties of Co₄Sb₁₂ with Bi₂Te₃ nanoinclusions.

PubMed

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter F; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-01-08

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering (SPS). The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron back scattered diffraction (EBSD) technique. Energy dispersive spectroscopy (EDS) showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity () were measured in the temperature range of 350 - 673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423 - 673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories. © 2018 IOP Publishing Ltd.

Transport and magnetic properties of dilute rare-earth-PbSe alloys

NASA Astrophysics Data System (ADS)

Jovovic, V.; Joottu-Thiagarajan, S.; West, J.; Heremans, J. P.; Story, T.; Golacki, Z.; Paszkowicz, W.; Osinniy, V.

2007-03-01

An increase in the density of states is predicted [1] to increase the thermoelectric (TE) figure of merit, and could be induced by doping TE materials with rare-earth elements. This was attempted here: the galvanomagnetic and thermomagnetic properties of dilute alloys of PbSe and Ce, Pr, Nd, Eu, Gd and Yb were measured from 80 to 380K; magnetic susceptibilities were measured from 4 to 120K. The density of states effective mass, the relaxation time, and the carrier density and mobility are calculated from measurements of the electrical conductivity and the Hall, Seebeck and transverse Nernst-Ettingshausen coefficients. The Eu, Gd, Nd and Yb-alloyed samples are paramagnetic; the concentrations of rare-earth atoms are determined from fitting a Curie-Weiss law. The magnetic behavior of the Ce and Pr-alloyed samples is different. Ce, Pr, Nd, Gd and Yb act as donors with efficiencies that will be reported. Alloying with divalent Eu does not affect carrier density but increases the energy gap. This work suggests that the 4f orbitals preserve their atomic-like localized character and exhibit only weak sp-f hybridization. 1 G. D. Mahan and J. O. Sofo, Proc. Natl. Acad. Sci. USA 93 7436 (1996)

Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment

DOE PAGES

Bainsla, Lakhan; Mallick, A. I.; Raja, M. Manivel; ...

2015-07-08

Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), which offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Supported by electronic-structure calculations, we report evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (prototype LiMgPdSn) structure but exhibiting chemical disorder (DO 3 structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (Mmore » S) was obtained at 8K agrees with the Slater-Pauling rule and the Curie temperature (T C) is found to exceed 400K. Carrier concentration (up to 250K) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185S/cm at 5K. Considering the SGS properties and high T C, this material appears to be promising for spintronic applications.« less

Specific features of electron scattering in uniaxially deformed n-Ge single crystals in the presence of radiation defects

NASA Astrophysics Data System (ADS)

Luniov, S. V.; Zimych, A. I.; Nazarchuk, P. F.; Maslyuk, V. T.; Megela, I. G.

2016-12-01

Temperature dependencies for concentration of electrons and the Hall mobility for unirradiated and irradiated by the flow of electrons ? single crystals ?, with the energy of ?, for different values of uniaxial pressures along the crystallographic directions ?, ? and ? are obtained on the basis of piezo-Hall effect measurements. Non-typical growth of the Hall mobility of electrons for irradiated single crystals ? in comparison with unirradiated with the increasing of value of uniaxial pressures along the crystallographic directions ? (for the entire range of the investigated temperatures) and ? (to temperatures ?) has been revealed. Such an effect of the Hall mobility increase for uniaxially deformed single crystals ? is explained by the reduction of gradients of a resistance as a result of reduction in the amplitude of a large-scale potential with deformation and concentration of charged A-centers in the process of their recharge by the increasing of uniaxial pressure and consequently the probability of scattering on these centers. Theoretical calculations for temperature dependencies of the Hall mobility for uniaxially deformed single crystals ? in terms of the electrons scattering on the ions of shallow donors, acoustic, optical and intervalley phonons, regions of disordering and large-scale potential is good conformed to the corresponding experimental results at temperatures T<220 K for the case of uniaxial pressures along the crystallographic directions ? and ? and for temperatures ? when the uniaxial pressure is directed along the crystallographic directions ?. The mechanism of electron scattering on a charged radiation defects (which correspond to the deep energy levels of A-centers) 'is turned off' for the given temperatures due to the uniaxial pressure. Reduction of the Hall mobility in transition through a maximum of dependence ? with the increasing temperature for cases of the uniaxial deformation of the irradiated single crystals ? along the crystallographic directions ? and ? is explained by the deforming redistribution of electrons between the minima of conduction band of germanium with different mobility.

Chiral Majorana fermion modes in a quantum anomalous Hall insulator–superconductor structure

DOE PAGES

He, Qing Lin; Pan, Lei; Stern, Alexander L.; ...

2017-07-21

Majorana fermion is a hypothetical particle that is its own antiparticle. We report transport measurements that suggest the existence of one-dimensional chiral Majorana fermion modes in the hybrid system of a quantum anomalous Hall insulator thin film coupled with a superconductor. As the external magnetic field is swept, half-integer quantized conductance plateaus are observed at the locations of magnetization reversals, giving a distinct signature of the Majorana fermion modes. This transport signature is reproducible over many magnetic field sweeps and appears at different temperatures. This finding may open up an avenue to control Majorana fermions for implementing robust topological quantummore » computing.« less

Robustness of topological Hall effect of nontrivial spin textures

NASA Astrophysics Data System (ADS)

Jalil, Mansoor B. A.; Tan, Seng Ghee

2014-05-01

We analyze the topological Hall conductivity (THC) of topologically nontrivial spin textures like magnetic vortices and skyrmions and investigate its possible application in the readback for magnetic memory based on those spin textures. Under adiabatic conditions, such spin textures would theoretically yield quantized THC values, which are related to topological invariants such as the winding number and polarity, and as such are insensitive to fluctuations and smooth deformations. However, in a practical setting, the finite size of spin texture elements and the influence of edges may cause them to deviate from their ideal configurations. We calculate the degree of robustness of the THC output in practical magnetic memories in the presence of edge and finite size effects.

Topological BF field theory description of topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Gil Young; Moore, Joel E., E-mail: jemoore@berkeley.edu; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720

2011-06-15

Research Highlights: > We show that a BF theory is the effective theory of 2D and 3D topological insulators. > The non-gauge-invariance of the bulk theory yields surface terms for a bosonized Dirac fermion. > The 'axion' term in electromagnetism is correctly obtained from gapped surfaces. > Generalizations to possible fractional phases are discussed in closing. - Abstract: Topological phases of matter are described universally by topological field theories in the same way that symmetry-breaking phases of matter are described by Landau-Ginzburg field theories. We propose that topological insulators in two and three dimensions are described by a version ofmore » abelian BF theory. For the two-dimensional topological insulator or quantum spin Hall state, this description is essentially equivalent to a pair of Chern-Simons theories, consistent with the realization of this phase as paired integer quantum Hall effect states. The BF description can be motivated from the local excitations produced when a {pi} flux is threaded through this state. For the three-dimensional topological insulator, the BF description is less obvious but quite versatile: it contains a gapless surface Dirac fermion when time-reversal-symmetry is preserved and yields 'axion electrodynamics', i.e., an electromagnetic E . B term, when time-reversal symmetry is broken and the surfaces are gapped. Just as changing the coefficients and charges of 2D Chern-Simons theory allows one to obtain fractional quantum Hall states starting from integer states, BF theory could also describe (at a macroscopic level) fractional 3D topological insulators with fractional statistics of point-like and line-like objects.« less

Fractional conductivity in 2D and 3D crystals

NASA Astrophysics Data System (ADS)

Sidharth, B. G.; Das, Abhishek; Valluri, S. R.

2018-04-01

In this work, we show that the phenomenon of fractional quantum Hall effect can be obtained for 2D and 3D crystal structures, using the noncommutative nature of spacetime and the Lambert W function. This fractional conductivity has been shown to be a consequence of the noncommutative geometry underlying the structure of graphene. Also, it has been shown, for graphene, that in the 3D case the conductivity is extremely small and depends on the self-energy that arises due to random fluctuations or zitterbewegung.

Hidden Fermi liquid: Self-consistent theory for the normal state of high-Tc superconductors

NASA Astrophysics Data System (ADS)

Casey, Philip A.

The anomalous "strange metal" properties of the normal, non-superconducting state of the high-Tc cuprate superconductors have been extensively studied for over two decades. The resistivity is robustly T-linear at high temperatures, while at low T it appears to maintain linearity near optimal doping and is T2 at higher doping. The inverse Hall angle is strictly T2 and hence has a distinct scattering lifetime from the resistivity. The transport scattering lifetime is highly anisotropic as directly measured by angle-dependent magnetoresistance (ADMR) and indirectly in more traditional transport experiments. The IR conductivity exhibits a non-integer power-law in frequency, which we take as a defining characteristic of the "strange metal". A phenomenological theory of the transport and spectroscopic properties at a self-consistent and predictive level has been much sought after, yet elusive. Hidden Fermi liquid theory (HFL) explicitly accounts for the effects of Gutzwiller projection in the t-J Hamiltonian, widely believed to contain the essential physics of the high-Tc superconductors. We show this theory to be the first self-consistent description for the normal state of the cuprates based on transparent, fundamental assumptions. Our well-defined formalism also serves as a guide for further experimental confirmation. Chapter 1 reviews the "strange metal" properties and the relevant aspects of competing models. Chapter 2 presents the theoretical foundations of the formalism. Chapters 3 and 4 derive expressions for the entire normal state relating many of the properties, for example: angle-resolved photoemission, IR conductivity, resistivity, Hall angle, and by generalizing the formalism to include the Fermi surface topology---ADMR. Self-consistency is demonstrated with experimental comparisons, including the most recent laser-ARPES and ADMR. Chapter 5 discusses entropy transport, as in the thermal conductivity, thermal Hall conductivity, and consequent metrics of non-Fermi liquid behavior such as the Wiedemann-Franz and Kadowaki-Woods ratios.

MHD heat flux mitigation in hypersonic flow around a blunt body with ablating surface

NASA Astrophysics Data System (ADS)

Bityurin, V. A.; Bocharov, A. N.

2018-07-01

One of the possible applications of magnetohydrodynamic flow control is considered. Namely, the surface heat flux mitigation by means of magnetohydrodynamic (MHD) interaction in hypersonic flow around a blunt body. The 2D computational model realizes a coupled solution of chemically non-equilibrium ionized airflow in magnetic field. Heat- and mass-transfer due to the ablation of materials from the body surface is taken into account. Two cases of free-stream flow conditions are considered: moderate free-stream velocity (7500 m s‑1) case and high free-stream velocity (11 000 m s‑1) case. It is shown that the first flow case results in moderate ionization in the shock layer, while the second flow case results in high ionization. In the first case, the Hall effect is significant, and effective electrical conductivity in the shock layer is rather low. In the second case, the Hall effect reduces, and effective conductivity is high. Even if the Hall effect is strong, as in the first case, intensive MHD deceleration of the flow behind the shock is provided due to the presence of insulating boundaries, the bow shock front and non-conductive wall of the blunt body. In the second case, high effective conductivity provides a high intensity of MHD flow deceleration. In both cases, a strong effect of MHD interaction on the flow structure is observed. As a consequence, a noticeable reduction of the surface heat flux is revealed for reasonable values of magnetic induction. The new treatment of mechanism for the surface heat flux reduction is proposed, which is different from commonly used one assuming that MHD interaction increases the bow shock stand-off distance, and, consequently results in a decrease of the mean temperature drop across the shock layer. The new effect of ‘saturation of heat flux’ is discussed.

Influence of defects on the charge density wave of ([SnSe] 1+δ) 1(VSe 2) 1 ferecrystals

DOE PAGES

Falmbigl, Matthias; Putzky, Daniel; Ditto, Jeffrey; ...

2015-07-14

A series of ferecrystalline compounds ([SnSe] 1+δ) 1(VSe 2) 1 with varying Sn/V ratios were synthesized using the modulated elemental reactant technique. Temperature-dependent specific heat data reveal a phase transition at 102 K, where the heat capacity changes abruptly. An abrupt increase in electrical resistivity occurs at the same temperature, correlated with an abrupt increase in the Hall coefficient. Combined with the magnitude and nature of the specific heat discontinuity, this suggests that the transition is similar to the charge density wave transitions in transition metal dichalcogenides. An ordered intergrowth was formed over a surprisingly wide compositional range of Sn/Vmore » ratios of 0.89 ≤ 1 + δ ≤ 1.37. X-ray diffraction and transmission electron microscopy reveal the formation of various volume defects in the compounds in response to the nonstoichiometry. The electrical resistivity and Hall coefficient data of samples with different Sn/V ratios show systematic variation in the carrier concentration with the Sn/V ratio. There is no significant change in the onset temperature of the charge density wave transition, only a variation in the carrier densities before and after the transition. Given the sensitivity of the charge density wave transitions of transition metal dichalcogenides to variations in composition, it is very surprising that the charge density wave transition observed at 102 K for ([SnSe] 1.15) 1(VSe 2) 1 is barely influenced by the nonstoichiometry and structural defects. As a result, this might be a consequence of the two-dimensional nature of the structurally independent VSe 2 layers.« less

Electrical transport properties of sputtered Nd2-xCexCuO4±δ thin films

NASA Astrophysics Data System (ADS)

Guarino, Anita; Leo, Antonio; Avella, Adolfo; Avitabile, Francesco; Martucciello, Nadia; Grimaldi, Gaia; Romano, Alfonso; Pace, Sandro; Romano, Paola; Nigro, Angela

2018-05-01

Thin films of the electron-doped high-temperature superconductor Nd2-xCexCuO4±δ have been deposited by dc sputtering technique on (100) SrTiO3 substrates. A tuning of the oxygen content in the as-grown non-superconducting samples has been achieved by changing the oxygen partial pressure during the growth in the Argon sputtering atmosphere. All samples show the superconducting transition after a suitable two-step thermal treatment in an oxygen-reducing environment. Structural and electrical transport properties on the as-grown as well as on the superconducting samples have been investigated. We find that the structural properties are consistent with a deficiency of the oxygen content with respect to optimally annealed samples, and that the transition to the superconducting phase is always accompanied by an increase of the c-axis lattice parameter. Measurements of the Hall coefficient RH as a function of temperature and in the normal state of our epitaxial films are presented and discussed. RH results negative for all the films regardless of the oxygen content and it decreases with the temperature. In particular, the Hall coefficient is only about 10% lower than the value measured in the as-grown oxygen-deficient phase, in contrast to the results reported in literature. The removal of the excess oxygen in as-grown samples seems not to be the only requirement for triggering the superconducting transition in electron-doped compounds. The microstructural change associated with the increase of the c-axis parameter in our deoxygenated samples could help in understanding the microscopic mechanism underlying the reduction process of n-type superconductors, which is still under debate.

Unusual ordering in c-NpPd3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gofryk, Krzysztof

2010-01-01

NpPd{sub 3} exhibits two crystal structures. At room temperature, the equilibrium structure is the dhcp TiNi{sub 3}-type, but rapid cooling from melt produces the cubic AuCu{sub 3}-type structure. In both cases, the Np-Np distance is 4.1 {angstrom}, so that the Np ions are expected to be localized. Both phases of NpPd{sub 3} were first studied at the ANL in the early 1970s. Nellis et al measured the magnetic susceptibility and the electrical resistivity of cubic NpPd{sub 3}, and found evidence of magnetic ordering setting in below T{sub N} = 54 K. The magnetic order in this phase was confirmed bymore » Moessbauer and neutron studies. The neutron data revealed several magnetic Bragg peaks with an ordering wave-vector of (1/2,1/2, 1/2). In contrast, no evidence for any long-range magnetic ordering was found for dhcp NpPd{sub 3}, despite the presence of an anomaly at 30 K in the bulk magnetic data. Our recent measurements of the magnetic (magnetization, susceptibility), thermal (heat capacity) and transport (electrical resistivity, magnetoresistivity, thermopower and Hall effect) properties of cubic NpPd{sub 3} indicated highly unusual nature of the magnetic ordering. At T{sub N}, the specific heat exhibits an extremely large peak [as large as 1000 J/(mol K)] and the magnetic susceptibility shows a clear jump. The transport properties of c-NpPd{sub 3} indicate a dramatic Fermi-surface reconstruction at T{sub N}, which shows up as pronounced anomalies at this temperature in the electrical resistivity, the magnetoresistivity, the Seebeck coefficient and the Hall coefficient.« less

Numerical Study of Current Driven Instabilities and Anomalous Electron Transport in Hall-effect Thrusters

NASA Astrophysics Data System (ADS)

Tran, Jonathan

Plasma turbulence and the resulting anomalous electron transport due to azimuthal current driven instabilities in Hall-effect thrusters is a promising candidate for developing predictive models for the observed anomalous transport. A theory for anomalous electron transport and current driven instabilities has been recently studied by [Lafluer et al., 2016a]. Due to the extreme cost of fully resolving the Debye length and plasma frequency, hybrid plasma simulations utilizing kinetic ions and quasi-steady state fluid electrons have long been the principle workhorse methodology for Hall-effect thruster modeling. Using a reduced dimension particle in cell simulation implemented in the Thermophysics Universal Research Framework developed by the Air Force Research Lab, we show collective electron-wave scattering due to large amplitude azimuthal fluctuations of the electric field and the plasma density. These high-frequency and short wavelength fluctuations can lead to an effective cross-field mobility many orders of magnitude larger than what is expected from classical electron-neutral momentum collisions in the low neutral density regime. We further adapt the previous study by [Lampe et al., 1971] and [Stringer, 1964] for related current driven instabilities to electric propulsion relevant mass ratios and conditions. Finally, we conduct a preliminary study of resolving this instability with a modified hybrid simulation with the hope of integration with established hybrid Hall-effect thruster simulations.

A study on evacuation time from lecture halls in Faculty of Engineering, Universiti Putra Malaysia

NASA Astrophysics Data System (ADS)

Othman, W. N. A. W.; Tohir, M. Z. M.

2018-04-01

An evacuation situation in any building involves many risks. The geometry of building and high potential of occupant load may affect the efficiency of evacuation process. Although fire safety rules and regulations exist, they remain insufficient to guarantee the safety of all building occupants and do not prevent the dramatic events to be repeated. The main objective of this project is to investigate the relationship between the movement time, travel speed and occupant density during a series of evacuation drills specifically for lecture halls. Generally, this study emphasizes on the movement of crowd within a limited space and includes the aspects of human behaviour. A series of trial evacuations were conducted in selected lecture halls at Faculty of Engineering, Universiti Putra Malaysia with the aim of collecting actual data for numerical analysis. The numerical data obtained during trial evacuations were used to determine the evacuation time, crowd movement and behaviour during evacuation process particularly for lecture halls. The evacuation time and number of occupants exiting from each exit were recorded. Video camera was used to record and observe the movement behaviour of occupants during evacuations. EvacuatioNZ was used to simulate the trials evacuations of DK 5 and the results predicted were compared with experimental data. EvacuatioNZ was also used to predict the evacuation time and the flow of occupants exiting from each door for DK 4 and DK 8.

Surface and 3D Quantum Hall Effects from Engineering of Exceptional Points in Nodal-Line Semimetals

NASA Astrophysics Data System (ADS)

Molina, Rafael A.; González, José

2018-04-01

We show that, under a strong magnetic field, a 3D nodal-line semimetal is driven into a topological insulating phase in which the electronic transport takes place at the surface of the material. When the magnetic field is perpendicular to the nodal ring, the surface states of the semimetal are transmuted into Landau states which correspond to exceptional points, i.e., branch points in the spectrum of a non-Hermitian Hamiltonian which arise upon the extension to complex values of the momentum. The complex structure of the spectrum then allows us to express the number of zero-energy flat bands in terms of a new topological invariant counting the number of exceptional points. When the magnetic field is parallel to the nodal ring, we find that the bulk states are built from the pairing of surfacelike evanescent waves, giving rise to a 3D quantum Hall effect with a flat level of Landau states residing in parallel 2D slices of the 3D material. The Hall conductance is quantized in either case in units of e2/h , leading in the 3D Hall effect to a number of channels growing linearly with the section of the surface and opening the possibility to observe a macroscopic chiral current at the surface of the material.

Structural, magnetic, and electrical properties of perpendicularly magnetized Mn4-xFexGe thin films

NASA Astrophysics Data System (ADS)

Niesen, Alessia; Teichert, Niclas; Matalla-Wagner, Tristan; Balluf, Jan; Dohmeier, Niklas; Glas, Manuel; Klewe, Christoph; Arenholz, Elke; Schmalhorst, Jan-Michael; Reiss, Günter

2018-03-01

We investigated the structural, magnetic, and electrical properties of the perpendicularly magnetized Mn4-xFexGe thin films (0.3 ≤ x ≤ 1). The tetragonally distorted structure was verified for all investigated stoichiometries. High coercive fields in the range of 1.61 T to 3.64 T at room temperature were measured and showed increasing behavior with decreasing Fe content. The magnetic moments range from (0.16 ± 0.02) μB/f.u for Mn3Fe1Ge to (0.08 ± 0.01) μB/f.u for Mn3.4Fe0.6Ge. X-ray absorption spectroscopy revealed ferromagnetic coupling of the Mn and Fe atoms in Mn4-xFexGe and the ferrimagnetic ordering of the Mn magnetic moments. Anomalous Hall effect measurements showed sharp magnetization switching. The resistivity values are in the range of 207 μΩ cm to 457 μΩ cm depending on the stoichiometry. From the contribution of the ordinary Hall effect in the anomalous Hall effect measurements, Hall constants, the charge carrier density, and mobility were deduced. The thermal conductivity was calculated using the Wiedemann-Franz law. All these values are strongly influenced by the stoichiometry. An alternative method was introduced for the determination of perpendicular magnetic anisotropy. The values range between 0.26 MJ/m3 and 0.36 MJ/m3.