Sheath oscillation characteristics and effect on near-wall conduction in a krypton Hall thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Fengkui, E-mail: fengkuizhang@163.com; Kong, Lingyi; Li, Chenliang

2014-11-15

Despite its affordability, the krypton Hall-effect thruster in applications always had problems in regard to performance. The reason for this degradation is studied from the perspective of the near-wall conductivity of electrons. Using the particle-in-cell method, the sheath oscillation characteristics and its effect on near-wall conduction are compared in the krypton and xenon Hall-effect thrusters both with wall material composed of BNSiO{sub 2}. Comparing these two thrusters, the sheath in the krypton-plasma thruster will oscillate at low electron temperatures. The near-wall conduction current is only produced by collisions between electrons and wall, thereby causing a deficiency in the channel current.more » The sheath displays spatial oscillations only at high electron temperature; electrons are then reflected to produce the non-oscillation conduction current needed for the krypton-plasma thruster. However, it is accompanied with intensified oscillations.« less

Magnetotransport properties of 8-Pmmn borophene: effects of Hall field and strain.

PubMed

Islam, S K Firoz

2018-07-11

The polymorph of 8-Pmmn borophene is an anisotropic Dirac material with tilted Dirac cones at two valleys. The tilting of the Dirac cones at two valleys are in opposite directions, which manifests itself via the valley dependent Landau levels in presence of an in-plane electric field (Hall field). The valley dependent Landau levels cause valley polarized magnetotransport properties in presence of the Hall field, which is in contrast to the monolayer graphene with isotropic non-tilted Dirac cones. The longitudinal conductivity and Hall conductivity are evaluated by using linear response theory in low temperature regime. An analytical approximate form of the longitudinal conductivity is also obtained. It is observed that the tilting of the Dirac cones amplifies the frequency of the longitudinal conductivity oscillation (Shubnikov-de Haas). On the other hand, the Hall conductivity exhibits graphene-like plateaus except the appearance of valley dependent steps which are purely attributed to the Hall field induced lifting of the valley degeneracy in the Landau levels. Finally we look into the different cases when the Hall field is applied to the strained borophene and find that valley dependency is fully dominated by strain rather than Hall field. Another noticeable point is that if the real magnetic field is replaced by the strain induced pseudo magnetic field then the electric field looses its ability to cause valley polarized transport.

Hall effect at a tunable metal-insulator transition

NASA Astrophysics Data System (ADS)

Teizer, W.; Hellman, F.; Dynes, R. C.

2003-03-01

Using a rotating magnetic field, the Hall effect in three-dimensional amorphous GdxSi1-x has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient R0 is negative, indicating electronlike conductivity, with a magnitude that increases with decreasing conductivity. R0 diverges at the metal-insulator transition, and displays critical behavior with exponent -1 [R0˜(H-HC)-1]. This dependence is interpreted as a linear decrease in the density of mobile carriers n˜R-10˜H-HC, indicative of the dominant influence of interaction effects.

Thermally driven anomalous Hall effect transitions in FeRh

NASA Astrophysics Data System (ADS)

Popescu, Adrian; Rodriguez-Lopez, Pablo; Haney, Paul M.; Woods, Lilia M.

2018-04-01

Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here, we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall, and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the antiferromagnetic state and a sign change in the spin Hall conductivity across the transition are found. It is suggested that the FeRh can be used as a spin current detector capable of differentiating the spin Hall effect from other anomalous transverse effects. The implications of this material and its thermally driven phases as a spin current detection scheme are also discussed.

Disorder-induced half-integer quantized conductance plateau in quantum anomalous Hall insulator-superconductor structures

NASA Astrophysics Data System (ADS)

Huang, Yingyi; Setiawan, F.; Sau, Jay D.

2018-03-01

A weak superconducting proximity effect in the vicinity of the topological transition of a quantum anomalous Hall system has been proposed as a venue to realize a topological superconductor (TSC) with chiral Majorana edge modes (CMEMs). A recent experiment [Science 357, 294 (2017), 10.1126/science.aag2792] claimed to have observed such CMEMs in the form of a half-integer quantized conductance plateau in the two-terminal transport measurement of a quantum anomalous Hall-superconductor junction. Although the presence of a superconducting proximity effect generically splits the quantum Hall transition into two phase transitions with a gapped TSC in between, in this Rapid Communication we propose that a nearly flat conductance plateau, similar to that expected from CMEMs, can also arise from the percolation of quantum Hall edges well before the onset of the TSC or at temperatures much above the TSC gap. Our Rapid Communication, therefore, suggests that, in order to confirm the TSC, it is necessary to supplement the observation of the half-quantized conductance plateau with a hard superconducting gap (which is unlikely for a disordered system) from the conductance measurements or the heat transport measurement of the transport gap. Alternatively, the half-quantized thermal conductance would also serve as a smoking-gun signature of the TSC.

Spin Hall Effect in Doped Semiconductor Structures

NASA Astrophysics Data System (ADS)

Tse, Wang-Kong; Das Sarma, S.

2006-02-01

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as σxySJ/σxySS˜(ℏ/τ)/ɛF, with τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining σs/σc˜10-3-10-4, where σs(c) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)]SCIEAS0036-807510.1126/science.1105514 in n-doped 3D GaAs system.

Anomalous Nernst and Hall effects in magnetized platinum and palladium

NASA Astrophysics Data System (ADS)

Guo, G. Y.; Niu, Q.; Nagaosa, N.

2014-06-01

We study the anomalous Nernst effect (ANE) and anomalous Hall effect (AHE) in proximity-induced ferromagnetic palladium and platinum which is widely used in spintronics, within the Berry phase formalism based on the relativistic band-structure calculations. We find that both the anomalous Hall (σxyA) and Nernst (αxyA) conductivities can be related to the spin Hall conductivity (σxyS) and band exchange splitting (Δex) by relations σxyA=ΔexeℏσxyS(EF)' and αxyA=-π23kB2TΔexℏσxys(μ )'', respectively. In particular, these relations would predict that the σxyA in the magnetized Pt (Pd) would be positive (negative) since the σxyS(EF)' is positive (negative). Furthermore, both σxyA and αxyA are approximately proportional to the induced spin magnetic moment (ms) because the Δex is a linear function of ms. Using the reported ms in the magnetized Pt and Pd, we predict that the intrinsic anomalous Nernst conductivity (ANC) in the magnetic platinum and palladium would be gigantic, being up to ten times larger than, e.g., iron, while the intrinsic anomalous Hall conductivity (AHC) would also be significant.

Y{sub 3}Fe{sub 5}O{sub 12} spin pumping for quantitative understanding of pure spin transport and spin Hall effect in a broad range of materials (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhui; Wang, Hailong; Hammel, P. Chris

2015-05-07

Using Y{sub 3}Fe{sub 5}O{sub 12} (YIG) thin films grown by our sputtering technique, we study dynamic spin transport in nonmagnetic, ferromagnetic, and antiferromagnetic (AF) materials by ferromagnetic resonance spin pumping. From both inverse spin Hall effect and damping enhancement, we determine the spin mixing conductance and spin Hall angle in many metals. Surprisingly, we observe robust spin conduction in AF insulators excited by an adjacent YIG at resonance. This demonstrates that YIG spin pumping is a powerful and versatile tool for understanding spin Hall physics, spin-orbit coupling, and magnetization dynamics in a broad range of materials.

Nonequilibrium Hall Response After a Topological Quench

NASA Astrophysics Data System (ADS)

Unal, F. Nur; Mueller, Erich; Oktel, M. O.

2017-04-01

We theoretically study the Hall response of a lattice system following a quench where the topology of a filled band is suddenly changed. In the limit where the physics is dominated by a single Dirac cone, we find that the change in the Hall conductivity is two-thirds of the quantum of conductivity. We explore this universal behavior in the Haldane model, and discuss cold-atom experiments for its observation. Beyond linear response, the Hall effect crosses over from fractional to integer values. We investigate finite-size effects, and the role of the harmonic confinement. Furthermore, we explore the magnetic field quenches in ladders formed in synthetic dimensions. This work is supported by TUBITAK, NSFPHY-1508300, ARO-MURI W9111NF-14-1-0003.

Topological phase transitions and quantum Hall effect in the graphene family

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaksmore » which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.« less

Topological phase transitions and quantum Hall effect in the graphene family

NASA Astrophysics Data System (ADS)

Ledwith, P.; Kort-Kamp, W. J. M.; Dalvit, D. A. R.

2018-04-01

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaks which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. This complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.

Topological phase transitions and quantum Hall effect in the graphene family

DOE PAGES

Ledwith, Patrick John; Kort-Kamp, Wilton Junior de Melo; Dalvit, Diego Alejandro Roberto

2018-04-15

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaksmore » which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. As a result, this complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.« less

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Yang; Feng, Xiao; Ou, Yunbo

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to amore » quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.« less

Reversed Hall effect and plasma conductivity in the presence of charged impurities

NASA Astrophysics Data System (ADS)

Yaroshenko, V. V.; Lühr, H.

2018-01-01

The Hall conductivity of magnetized plasma can be strongly suppressed by the contribution of negatively charged particulates (referred further as "dust"). Once the charge density accumulated by the dust exceeds a certain threshold, the Hall component becomes negative, providing a reversal in the Hall current. Such an effect is unique for dust-loaded plasmas, and it can hardly be achieved in electronegative plasmas. Further growth of the dust density leads to an increase in both the absolute value of the Hall and Pedersen conductivities, while the field-aligned component is decreased. These modifications enhance the role of transverse electric currents and reduce the anisotropy of a magnetized plasma when loaded with charged impurities. The findings provide an important basis for studying the generation of electric currents and transport phenomena in magnetized plasma systems containing small charged particulates. They can be relevant for a wide range of applications from naturally occurring space plasmas in planetary magnetospheres and astrophysical objects to laboratory dusty plasmas (Magnetized Dusty Plasma Experiment) and to technological and fusion plasmas.

Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge.

PubMed

Nayak, Ajaya K; Fischer, Julia Erika; Sun, Yan; Yan, Binghai; Karel, Julie; Komarek, Alexander C; Shekhar, Chandra; Kumar, Nitesh; Schnelle, Walter; Kübler, Jürgen; Felser, Claudia; Parkin, Stuart S P

2016-04-01

It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)(-1) at 2 K and ~50 (ohm·cm)(-1) at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)(-1), comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect-based data storage devices.

Nonlinearity in the effect of an inhomogeneous Hall angle

NASA Astrophysics Data System (ADS)

Koon, Daniel W.

2007-03-01

The differential equation for the electric potential in a conducting material with an inhomogeneous Hall angle is extended to the large-field limit. This equation is solved for a square specimen, using a successive over-relaxation [SOR] technique for matrices of up to 101x101 size, and the Hall weighting function -- the effect of local pointlike perturbations on the measured Hall angle -- is calculated as both the unperturbed Hall angle, θH, and the perturbation, δθH, exceed the linear, small angle limit. Preliminary results show that the Hall angle varies by no more than 5% if both | θH |<1 and | δθH |<1. Thus, previously calculated results for the Hall weighting function can be used for most materials in all but the most extreme magnetic fields.

The non-commutative topology of two-dimensional dirty superconductors

NASA Astrophysics Data System (ADS)

De Nittis, Giuseppe; Schulz-Baldes, Hermann

2018-01-01

Non-commutative analysis tools have successfully been applied to the integer quantum Hall effect, in particular for a proof of the stability of the Hall conductance in an Anderson localization regime and of the bulk-boundary correspondence. In this work, these techniques are implemented to study two-dimensional dirty superconductors described by Bogoliubov-de Gennes Hamiltonians. After a thorough presentation of the basic framework and the topological invariants, Kubo formulas for the thermal, thermoelectric and spin Hall conductance are analyzed together with the corresponding edge currents.

Spin Hall effect and Landau spectrum of Dirac electrons in bismuth

NASA Astrophysics Data System (ADS)

Fuseya, Yuki

2015-03-01

Bismuth has played an important role in solid-state physics. Many key phenomena were first discovered in bismuth, such as diamagnetism, Seebeck, Nernst, Shubnikov-de Haas, and de Haas-van Alphen effects. These phenomena result from particular electronic states of bismuth. The strong spin-orbit interaction (~ 1.5eV) causes strong spin-dependent interband couplings resulting in an anomalous spin magnetic moment. We investigate the spin Hall effect and the angular dependent Landau spectrum of bismuth paying special attention to the effect of the anomalous spin magnetic moment. It is shown that the spin Hall insulator is possible and there is a fundamental relationship between the spin Hall conductivity and orbital diamagnetism in the insulating state of the Dirac electrons. Based on this theoretical finding, the magnitude of spin Hall conductivity is estimated for bismuth by that of orbital susceptibility. The magnitude of spin Hall conductivity turns out to be as large as 104Ω-1 cm-1, which is about 100 times larger than that of Pt. It is also shown that the ratio of the Zeeman splitting to the cyclotron energy, which reflects the effect of crystalline spin-orbit interaction, for holes at the T-point can be larger than 1.0 (the maximum of previous theories) and exhibit strong angular dependence, which gives a possible solution to the long-standing mystery of holes at the T-point. In collaboration with Masao Ogata, Hidetoshi Fukuyama, Zengwei Zhu, Benoît Fauqué, Woun Kang, and Kamran Behnia. Supported by JSPS (KAKENHI 24244053, 25870231, and 13428660).

Crossover to the anomalous quantum regime in the extrinsic spin Hall effect of graphene

NASA Astrophysics Data System (ADS)

Ferreira, Aires; Milletari, Mirco

Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density dependence of the extrinsic spin Hall effect in spin-orbit coupled graphene. We present a nonperturbative quantum diagrammatic calculation of the spin Hall response function in the strong-coupling regime that incorporates skew scattering and anomalous impurity density-independent contributions on equal footing. The spin Hall conductivity dependence on Fermi energy and electron-impurity interaction strength reveals the existence of experimentally accessible regions where anomalous quantum processes dominate. Our findings suggest that spin-orbit-coupled graphene is an ideal model system for probing the competition between semiclassical and bona fide quantum scattering mechanisms underlying the spin Hall effect. A.F. gratefully acknowledges the financial support of the Royal Society (U.K.).

Hall viscosity and electromagnetic response of electrons in graphene

NASA Astrophysics Data System (ADS)

Sherafati, Mohammad; Principi, Alessandro; Vignale, Giovanni

The Hall viscosity is a dissipationless component of the viscosity tensor of an electron liquid with broken time- reversal symmetry, such as a two-dimensional electron gas (2DEG) in the quantum Hall state. Similar to the Hall conductivity, the Hall viscosity is an anomalous transport coefficient; however, while the former is connected with the current response, the latter stems from the stress response to a geometric deformation. For a Galilean-invariant system such as 2DEG, the current density is indeed the generator of the geometric deformation: therefore a connection between the Hall connectivity and viscosity is expected and by now well established. In the case of graphene, a non-Galilean-invariant system, the existence of such a connection is far from obvious, as the current operator is essentially different from the momentum operator. In this talk, I will first present our results of the geometric Hall viscosity of electrons in single-layer graphene. Then, from the expansion of the nonlocal Hall conductivity for small wave vectors, I demonstrate that, in spite of the lack of Galilean invariance, an effective mass can be defined such that the relationship between the Hall conductivity and the viscosity retains the form it has in Galilean-invariant systems, not only for a large number of occupied Landau levels, but also, with very high accuracy, for the undoped system.

Framing anomaly in the effective theory of the fractional quantum Hall effect.

PubMed

Gromov, Andrey; Cho, Gil Young; You, Yizhi; Abanov, Alexander G; Fradkin, Eduardo

2015-01-09

We consider the geometric part of the effective action for the fractional quantum Hall effect (FQHE). It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions. In the lowest order in gradients, the linear response generating functional includes Chern-Simons, Wen-Zee, and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and contributes to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses for non-Abelian FQH states.

Quantum Hall effect in graphene with interface-induced spin-orbit coupling

NASA Astrophysics Data System (ADS)

Cysne, Tarik P.; Garcia, Jose H.; Rocha, Alexandre R.; Rappoport, Tatiana G.

2018-02-01

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

Observation of the fractional quantum Hall effect in graphene.

PubMed

Bolotin, Kirill I; Ghahari, Fereshte; Shulman, Michael D; Stormer, Horst L; Kim, Philip

2009-11-12

When electrons are confined in two dimensions and subject to strong magnetic fields, the Coulomb interactions between them can become very strong, leading to the formation of correlated states of matter, such as the fractional quantum Hall liquid. In this strong quantum regime, electrons and magnetic flux quanta bind to form complex composite quasiparticles with fractional electronic charge; these are manifest in transport measurements of the Hall conductivity as rational fractions of the elementary conductance quantum. The experimental discovery of an anomalous integer quantum Hall effect in graphene has enabled the study of a correlated two-dimensional electronic system, in which the interacting electrons behave like massless chiral fermions. However, owing to the prevailing disorder, graphene has so far exhibited only weak signatures of correlated electron phenomena, despite intense experimental and theoretical efforts. Here we report the observation of the fractional quantum Hall effect in ultraclean, suspended graphene. In addition, we show that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap. These newly discovered quantum states offer the opportunity to study correlated Dirac fermions in graphene in the presence of large magnetic fields.

Disorder effects in the quantum Hall effect of graphene p-n junctions

NASA Astrophysics Data System (ADS)

Li, Jian; Shen, Shun-Qing

2008-11-01

The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.

The impact of finite-area inhomogeneities on resistive and Hall measurement

NASA Astrophysics Data System (ADS)

Koon, Daniel

2013-03-01

I derive an iterative expression for the electric potential in an otherwise homogeneous thin specimen as the result of a finite-area inhomogeneity in either the direct conductance, the Hall conductance, or both. This expression extends to the finite-area regime the calculation of the effect of such inhomogeneities on the measurement error in the sheet resistance and Hall sheet resistance. I then test these results on the exactly-solvable case of a circular inhomogeneity equally distant from the four electrodes of either a square four-point-probe array on an infinitely large conducting specimen or a circular van der Pauw specimen with symmetrically-placed electrodes.

Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

NASA Astrophysics Data System (ADS)

Hammond, Joseph Wilson

2000-10-01

Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from 500°C to 800°C. The sensors displayed slight drift in long term baseline stability and good long term sensitivity stability (14 days). Long term operation (30 days) at elevated temperatures had no noticeable effect on the thin film structure.

Valley-polarized quantum transport generated by gauge fields in graphene

NASA Astrophysics Data System (ADS)

Settnes, Mikkel; Garcia, Jose H.; Roche, Stephan

2017-09-01

We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a {{e}2}/h Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.

Chirality-induced magnon transport in AA-stacked bilayer honeycomb chiral magnets.

PubMed

Owerre, S A

2016-11-30

In this Letter, we study the magnetic transport in AA-stacked bilayer honeycomb chiral magnets coupled either ferromagnetically or antiferromagnetically. For both couplings, we observe chirality-induced gaps, chiral protected edge states, magnon Hall and magnon spin Nernst effects of magnetic spin excitations. For ferromagnetically coupled layers, thermal Hall and spin Nernst conductivities do not change sign as function of magnetic field or temperature similar to single-layer honeycomb ferromagnetic insulator. In contrast, for antiferromagnetically coupled layers, we observe a sign change in the thermal Hall and spin Nernst conductivities as the magnetic field is reversed. We discuss possible experimental accessible honeycomb bilayer quantum materials in which these effects can be observed.

Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System

NASA Astrophysics Data System (ADS)

Gusev, G. M.; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.

2010-04-01

We study the transport properties of HgTe-based quantum wells containing simultaneously electrons and holes in a magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity σxy≈0 and in a minimum of diagonal conductivity σxx at ν=νp-νn=0, where νn and νp are the electron and hole Landau level filling factors. We suggest that the transport at the CNP point is determined by electron-hole “snake states” propagating along the ν=0 lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in a random magnetic field with a zero mean value.

Anomalous Hall effect in calcium-doped lanthanum cobaltite and gadolinium

NASA Astrophysics Data System (ADS)

Baily, Scott Alan

The physical origin of the anomalous (proportional to magnetization) Hall effect is not very well understood. While many theories account for a Hall effect proportional to the magnetization of a material, these theories often predict effects significantly smaller than those found in ferromagnetic materials. An even more significant deficiency of the conventional theories is that they predict an anomalous Hall resistivity that is proportional to a power of the resistivity, and in the absence of a metal insulator transition cannot account for the anomalous Hall effect that peaks near TC. Recent models based on a geometric, or Berry, phase have had a great deal of success describing the anomalous Hall effect in double-exchange systems (e.g., lanthanum manganite and chromium dioxide). In gadolinium, as in double-exchange magnets, the exchange interaction is mediated by the conduction electrons and the anomalous Hall effect may therefore resemble that of CrO2 and other metallic double-exchange ferromagnets. Lanthanum cobaltite is similar to manganite in many ways, but a strong double-exchange interaction is not present. Calcium-doped lanthanum cobaltite films were found to have the largest anomalous Hall effect of any ferromagnetic metal. The primary purpose of this study is to gain insight into the origin of the anomalous Hall effect with the hope that these theories can be extended to account for the effect in other materials. The Hall resistivity, magnetoresistance, and magnetization of a Gadolinium single crystal were measured in fields up to 30 T. Cobaltite films were grown via laser ablation and characterized by a variety of techniques. Hall resistivity, magnetoresistance, magnetization, and magnetothermopower of L 1-xCaxCoO3 samples with 0.15 < x < 0.4 were measured in fields up to 7 T. The Gd results suggest that Berry's phase contributes partially to the Hall effect near TC. Berry's phase theories hold promise for explaining the large anomalous Hall effect in La1-xCaxCoO3 near T C, but the material presents many additional complexities, including a unique low temperature magnetoresistance. At low temperature, the Hall effect may be best explained by spin-polarized carriers scattering off of orbital disorder in spin-ordered clusters.

Tunnelling anomalous and planar Hall effects (Conference Presentation)

NASA Astrophysics Data System (ADS)

Matos-Abiague, Alex; Scharf, Benedikt; Han, Jong E.; Hankiewicz, Ewelina M.; Zutic, Igor

2016-10-01

We theoretically show how the interplay between spin-orbit coupling (SOC) and magnetism can result in a finite tunneling Hall conductance, transverse to the applied bias. For two-dimensional tunnel junctions with a ferromagnetic lead and magnetization perpendicular to the current flow, the detected anomalous Hall voltage can be used to extract information not only about the spin polarization but also about the strength of the interfacial SOC. In contrast, a tunneling current across a ferromagnetic barrier on the surface of a three-dimensional topological insulator (TI) can induce a planar Hall response even when the magnetization is oriented along the current flow[1]. The tunneling nature of the states contributing to the planar Hall conductance can be switched from the ordinary to the Klein regimes by the electrostatic control of the barrier strength. This allows for an enhancement of the transverse response and a giant Hall angle, with the tunneling planar Hall conductance exceeding the longitudinal component. Despite the simplicity of a single ferromagnetic region, the TI/ferromagnet system exhibits a variety of functionalities. In addition to a spin-valve operation for magnetic sensing and storing information, positive, negative, and negative differential conductances can be tuned by properly adjusting the barrier potential and/or varying the magnetization direction. Such different resistive behaviors in the same system are attractive for potential applications in reconfigurable spintronic devices. [1] B. Scharf, A. Matos-Abiague, J. E. Han, E. M. Hankiewicz, and I. Zutic, arXiv:1601.01009 (2016).

Quantum Nonlinear Hall Effect Induced by Berry Curvature Dipole in Time-Reversal Invariant Materials.

PubMed

Sodemann, Inti; Fu, Liang

2015-11-20

It is well known that a nonvanishing Hall conductivity requires broken time-reversal symmetry. However, in this work, we demonstrate that Hall-like currents can occur in second-order response to external electric fields in a wide class of time-reversal invariant and inversion breaking materials, at both zero and twice the driving frequency. This nonlinear Hall effect has a quantum origin arising from the dipole moment of the Berry curvature in momentum space, which generates a net anomalous velocity when the system is in a current-carrying state. The nonlinear Hall coefficient is a rank-two pseudotensor, whose form is determined by point group symmetry. We discus optimal conditions to observe this effect and propose candidate two- and three-dimensional materials, including topological crystalline insulators, transition metal dichalcogenides, and Weyl semimetals.

High-Temperature Hall-Effect Apparatus

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, R. A.; Chemielewski, A. B.; Parker, J. B.; Zoltan, A.

1985-01-01

Compact furnace minimizes thermal gradients and electrical noise. Semiautomatic Hall-effect apparatus takes measurements on refractory semiconductors at temperatures as high as 1,100 degrees C. Intended especially for use with samples of high conductivity and low chargecarrier mobility that exhibit low signal-to-noise ratios, apparatus carefully constructed to avoid spurious electromagnetic and thermoelectric effects that further degrade measurements.

Hall effect on a Merging Formation Process of a Field-Reversed Configuration

NASA Astrophysics Data System (ADS)

Kaminou, Yasuhiro; Guo, Xuehan; Inomoto, Michiaki; Ono, Yasushi; Horiuchi, Ritoku

2015-11-01

Counter-helicity spheromak merging is one of the formation methods of a Field-Reversed Configuration (FRC). In counter-helicity spheromak merging, two spheromaks with opposing toroidal fields merge together, through magnetic reconnection events and relax into a FRC, which has no or little toroidal field. This process contains magnetic reconnection and a relaxation phenomena, and the Hall effect has some essential effects on these process because the X-point in the magnetic reconnection or the O-point of the FRC has no or little magnetic field. However, the Hall effect as both global and local effect on counter-helicity spheromak merging has not been elucidated. In this poster, we conducted 2D/3D Hall-MHD simulations and experiments of counter-helicity spheromak merging. We find that the Hall effect enhances the reconnection rate, and reduces the generation of toroidal sheared-flow. The suppression of the ``slingshot effect'' affects the relaxation process. We will discuss details in the poster.

Low temperature hall effect investigation of conducting polymer-carbon nanotubes composite network.

PubMed

Bahrami, Afarin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat; Behzad, Kasra; M Abdi, Mahnaz; Din, Fasih Ud

2012-11-14

Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on the electrical properties of the resulting composites were studied at temperatures between 100 K and 300 K. The Hall mobility and Hall coefficient of PPy and PPy/f-MWCNT composite samples with different concentrations of f-MWCNT were measured using the van der Pauw technique. The mobility decreased slightly with increasing temperature, while the conductivity was dominated by the gradually increasing carrier density.

Observation of a superfluid Hall effect

PubMed Central

Jiménez-García, Karina; Williams, Ross A.; Beeler, Matthew C.; Perry, Abigail R.; Phillips, William D.; Spielman, Ian B.

2012-01-01

Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)—internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect’s sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose–Einstein condensate’s transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system’s global irrotationality influences this superfluid Hall signal. PMID:22699494

3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

NASA Astrophysics Data System (ADS)

Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

2017-09-01

The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

Hall effect spintronics for gas detection

NASA Astrophysics Data System (ADS)

Gerber, A.; Kopnov, G.; Karpovski, M.

2017-10-01

We present the concept of magnetic gas detection by the extraordinary Hall effect. The technique is compatible with the existing conductometric gas detection technologies and allows the simultaneous measurement of two independent parameters: resistivity and magnetization affected by the target gas. Feasibility of the approach is demonstrated by detecting low concentration hydrogen using thin CoPd films as the sensor material. The Hall effect sensitivity of the optimized samples exceeds 240% per 104 ppm at hydrogen concentrations below 0.5% in the hydrogen/nitrogen atmosphere, which is more than two orders of magnitude higher than the sensitivity of the conductance detection.

Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

DTIC Science & Technology

2015-02-01

to the electrical characterization of semiconductor materials. The Hall effect occurs when an electrical conductor is placed in a magnetic field...system. The TE11 mode is caused by the Hall effect when under an applied magnetic field. This effect rotates the TE10 mode 90° where the forward...conductivity tensors σxx and σxy, where σxx and σxy are functions of the magnetic field (H). The Hall coefficient (RH) for a given H is then

NASA HERMeS Hall Thruster Electrical Configuration Characterization

NASA Technical Reports Server (NTRS)

Peterson, Peter Y.; Kamhawi, Hani; Huang, Wensheng; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Hofer, Richard

2015-01-01

The NASA Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in-space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This paper describes the electrical configuration testing of the HERMeS TDU-1 Hall thruster in NASA Glenn Research Center's Vacuum Facility 5. The three electrical configurations examined were 1) thruster body tied to facility ground, 2) thruster floating, and 3) thruster body electrically tied to cathode common. The HERMeS TDU-1 Hall thruster was also configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

Composition-dependent magnetic response properties of Mn1 -xFexGe alloys

NASA Astrophysics Data System (ADS)

Mankovsky, S.; Wimmer, S.; Polesya, S.; Ebert, H.

2018-01-01

The composition-dependent behavior of the Dzyaloshinskii-Moriya interaction (DMI), the spin-orbit torque (SOT), as well as anomalous and spin Hall conductivities of Mn1 -xFexGe alloys have been investigated by first-principles calculations using the relativistic multiple scattering Korringa-Kohn-Rostoker (KKR) formalism. The Dxx component of the DMI exhibits a strong dependence on the Fe concentration, changing sign at x ≈0.85 in line with previous theoretical calculations as well as with experimental results demonstrating the change of spin helicity at x ≈0.8 . A corresponding behavior with a sign change at x ≈0.5 is predicted also for the Fermi-sea contribution to the SOT, because this is closely related to the DMI. In the case of anomalous and spin Hall effects it is shown that the calculated Fermi-sea contributions are rather small and the composition-dependent behavior of these effects are determined mainly by the electronic states at the Fermi level. The spin-orbit-induced scattering mechanisms responsible for both these effects suggest a common origin of the minimum of the anomalous Hall effect and the sign change of the spin Hall effect conductivities.

Analytical theory and possible detection of the ac quantum spin Hall effect

DOE PAGES

Deng, W. Y.; Ren, Y. J.; Lin, Z. X.; ...

2017-07-11

Here, we develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators

NASA Astrophysics Data System (ADS)

Chang, Cui-Zu; Li, Mingda

2016-03-01

The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity {σyx}=\\frac{{{e}2}}{h} without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this topical review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.

Nonlinear dynamics induced anomalous Hall effect in topological insulators

PubMed Central

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-01

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics. PMID:26819223

Nonlinear dynamics induced anomalous Hall effect in topological insulators.

PubMed

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-28

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics.

Anomalous Hall effect in epitaxial permalloy thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y. Q.; Sun, N. Y.; Shan, R.

2013-10-28

Anomalous Hall effect (AHE) of epitaxial permalloy thin films grown on MgO (001) substrates is investigated. The longitudinal conductivity independent term (i.e., the sum of intrinsic and side-jump contributions) of the anomalous Hall conductivity (AHC) is found to be much smaller than those of Fe and Ni films. Band theoretical calculations of the intrinsic AHC as a function of the number of valence electrons (band filling) indicate that the AHC of the permalloy is in the vicinity of sign change, thus resulting in the smallness of the intrinsic AHC. The contribution of the phonon scattering is found to be comparablemore » to that of the impurity scattering. This work suggests that the permalloy films are ideal systems to understand the AHE mechanisms induced by impurity scattering.« less

Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Liu, Yang; Magill, B. A.; Moon, B. H.; Engel, L. W.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.

2014-06-01

In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

Large anomalous Nernst and spin Nernst effects in the noncollinear antiferromagnets Mn3X (X =Sn ,Ge ,Ga )

NASA Astrophysics Data System (ADS)

Guo, Guang-Yu; Wang, Tzu-Cheng

2017-12-01

Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in antiferromagnetic spintronics. Here we study the anomalous Nernst effect (ANE), a phenomenon having the same origin as the AHE, and also the spin Nernst effect (SNE) as well as AHE and the spin Hall effect (SHE) in noncollinear antiferromagnetic Mn3X (X =Sn , Ge, Ga) within the Berry phase formalism based on ab initio relativistic band structure calculations. For comparison, we also calculate the anomalous Nernst conductivity (ANC) and anomalous Hall conductivity (AHC) of ferromagnetic iron as well as the spin Nernst conductivity (SNC) of platinum metal. Remarkably, the calculated ANC at room temperature (300 K) for all three alloys is huge, being 10-40 times larger than that of iron. Moreover, the calculated SNC for Mn3Sn and Mn3Ga is also larger, being about five times larger than that of platinum. This suggests that these antiferromagnets would be useful materials for thermoelectronic devices and spin caloritronic devices. The calculated ANC of Mn3Sn and iron are in reasonably good agreement with the very recent experiments. The calculated SNC of platinum also agrees with the very recent experiments in both sign and magnitude. The calculated thermoelectric and thermomagnetic properties are analyzed in terms of the band structures as well as the energy-dependent AHC, ANC, SNC, and spin Hall conductivity via the Mott relations.

Tunability of the fractional quantum Hall states in buckled Dirac materials

NASA Astrophysics Data System (ADS)

Apalkov, Vadym M.; Chakraborty, Tapash

2014-12-01

We report on the fractional quantum Hall states of germanene and silicene where one expects a strong spin-orbit interaction. This interaction causes an enhancement of the electron-electron interaction strength in one of the Landau levels corresponding to the valence band of the system. This enhancement manifests itself as an increase of the fractional quantum Hall effect gaps compared to that in graphene and is due to the spin-orbit induced coupling of the Landau levels of the conduction and valence bands, which modifies the corresponding wave functions and the interaction within a single level. Due to the buckled structure, a perpendicular electric field lifts the valley degeneracy and strongly modifies the interaction effects within a single Landau level: in one valley the perpendicular electric field enhances the interaction strength in the conduction band Landau level, while in another valley, the electric field strongly suppresses the interaction effects.

Effect of band filling on anomalous Hall conductivity and magneto-crystalline anisotropy in NiFe epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zhong; Jiang, Hang-Yu; Zhou, Shi-Ming, E-mail: shiming@tongji.edu.cn

2016-01-15

The anomalous Hall effect (AHE) and magneto-crystalline anisotropy (MCA) are investigated in epitaxial Ni{sub x}Fe{sub 1−x} thin films grown on MgO (001) substrates. The scattering independent term b of anomalous Hall conductivity shows obvious correlation with cubic magneto-crystalline anisotropy K{sub 1}. When nickel content x decreasing, both b and K{sub 1} vary continuously from negative to positive, changing sign at about x = 0.85. Ab initio calculations indicate Ni{sub x}Fe{sub 1−x} has more abundant band structures than pure Ni due to the tuning of valence electrons (band fillings), resulting in the increased b and K{sub 1}. This remarkable correlation betweenmore » b and K{sub 1} can be attributed to the effect of band filling near the Fermi surface.« less

Hall effects on hydromagnetic free convection flow along a porous flat plate with mass transfer

NASA Astrophysics Data System (ADS)

Hossain, M. A.; Rashid, R. I. M. A.

1987-01-01

Effect of Hall current on the unsteady free convection flow of a viscous incompressible and electrically conducting fluid, in presence of foreign gases (such as H2, CO2, H2O, NH3), along an infinite vertical porous flat plate subjected to a transpiration velocity inversely proportional to the square-root of time is investigated in the presence of a uniform transverse magnetic field. The results are discussed with the effects of the parameters Gc (the Grashof number for mass transfer), m (the Hall parameter) and Sc (the Schmidt number) for Pr = 0.71, which represents air.

Large anomalous Hall effect in a non-collinear antiferromagnet Mn3Sn at room temperature

NASA Astrophysics Data System (ADS)

Higo, Tomoya; Kiyohara, Naoki; Nakatsuji, Satoru

Recent development in theoretical and experimental studies have provided a framework for understanding the anomalous Hall effect using Berry-phase concepts, and this perspective has led to predictions that, under certain conditions, a large anomalous Hall effect may appear in spin liquids and antiferromagnets. In this talk, we will present experimental results showing that the antiferromagnet Mn3Sn, which has a non-collinear 120-degree spin order, exhibits a large anomalous Hall effect. The magnitude of the Hall conductivity is ~ 20 Ω-1 cm-1 at room temperature and > 100 Ω-1 cm-1 at low temperatures. We found that a main component of the Hall signal, which is nearly independent of a magnetic field and magnetization, can change the sign with the reversal of a small applied field, corresponding to the rotation of the staggered moments of the non-collinear antiferromagnetic spin order which carries a very small net moment of a few of mμB. Supported by PRESTO, JST, and Grants-in-Aid for Program for Advancing Strategic International Networks to Accelerate the Circulation of Talented Researchers (No. R2604) and Scientific Research on Innovative Areas (15H05882 and 15H05883) from JSPS.

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sengupta, Parijat; Bellotti, Enrico

2016-05-23

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; themore » spin Hall conductivity of WSe{sub 2} was found to be larger.« less

Redistributing Chern numbers and quantum Hall transitions in multi-band lattices

NASA Astrophysics Data System (ADS)

Yu, H. L.; Zhai, Z. Y.; Jiang, C.

2018-07-01

We numerically study the integer quantum Hall effect (IQHE) on m-band lattices. With continuous modulating the next-nearest-neighbor hopping integral t' , it is found that the full band is divided into 2 m - 1 regions. There are m - 1 critical regions with pseudogaps induced by the merging between the two adjacent subbands, where both Chern numbers of the correlating Landau subbands and the corresponding Hall plateau are not well-defined. The other m regions with different well-defined Chern numbers are separated by the above m - 1 critical regions. Due to the redistributing Chern numbers of system induced by the merging of subbands, the Hall conductance exhibits a peculiar phase transition, which is characterized by the direct change of Hall plateau state.

Anomalous Hall effect in semiconductor quantum wells in proximity to chiral p -wave superconductors

NASA Astrophysics Data System (ADS)

Yang, F.; Yu, T.; Wu, M. W.

2018-05-01

By using the gauge-invariant optical Bloch equation, we perform a microscopic kinetic investigation on the anomalous Hall effect in chiral p -wave superconducting states. Specifically, the intrinsic anomalous Hall conductivity in the absence of the magnetic field is zero as a consequence of Galilean invariance in our description. As for the extrinsic channel, a finite anomalous Hall current is obtained from the impurity scattering with the optically excited normal quasiparticle current even at zero temperature. From our kinetic description, it can be clearly seen that the excited normal quasiparticle current is due to an induced center-of-mass momentum of Cooper pairs through the acceleration driven by ac electric field. For the induced anomalous Hall current, we show that the conventional skew-scattering channel in the linear response makes the dominant contribution in the strong impurity interaction. In this case, our kinetic description as a supplementary viewpoint mostly confirms the results of Kubo formalism in the literature. Nevertheless, in the weak impurity interaction, this skew-scattering channel becomes marginal and we reveal that an induction channel from the Born contribution dominates the anomalous Hall current. This channel, which has long been overlooked in the literature, is due to the particle-hole asymmetry by nonlinear optical excitation. Finally, we study the case in the chiral p -wave superconducting state with a transverse conical magnetization, which breaks the Galilean invariance. In this situation, the intrinsic anomalous Hall conductivity is no longer zero. Comparison of this intrinsic channel with the extrinsic one from impurity scattering is addressed.

Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

Coherent radar estimates of high latitude field-aligned currents: the importance of conductance gradients

NASA Astrophysics Data System (ADS)

Kosch, M.; Nielsen, E.

Two bi-static VHF radar systems STARE and SABRE have been employed to estimate ionospheric electric field distributions in the geomagnetic latitude range 61 1 - 69 3 degrees over Scandinavia corresponding to the global Region 2 current system 173 days of data from all four radars have been analysed during the period 1982 to 1986 The average magnetic field-aligned currents have been computed as a function of the Kp and Ae indices using an empirical model of ionospheric Pedersen and Hall conductance taking into account conductance gradients The divergence of horizontal Pedersen currents and Hall conductance gradients have approximately the same importance for generating the Region 2 field-aligned currents Pedersen conductance gradients have a significant modifying effect A case study of field-aligned currents has been performed using the STARE radar system to obtain the instantaneous ionospheric electric field distribution in the vicinity of an auroral arc The instantaneous Hall conductance was estimated from the Scandinavian Magnetometer Array This study clearly shows that even for quiet steady state geomagnetic conditions conductance gradients are important modifiers of magnetic field-aligned currents

NASA HERMeS Hall Thruster Electrical Configuration Characterization

NASA Technical Reports Server (NTRS)

Peterson, Peter; Kamhawi, Hani; Huang, Wensheng; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Hofer, Richard

2016-01-01

NASAs Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This presentation will cover the electrical configuration testing of the TDU-1 HERMeS Hall thruster in NASA Glenn Research Centers Vacuum Facility 5. The three electrical configurations examined are the thruster body tied to facility ground, thruster floating, and finally the thruster body electrically tied to cathode common. The TDU-1 HERMeS was configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

A holographic model for the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Lippert, Matthew; Meyer, René; Taliotis, Anastasios

2015-01-01

Experimental data for fractional quantum Hall systems can to a large extent be explained by assuming the existence of a Γ0(2) modular symmetry group commuting with the renormalization group flow and hence mapping different phases of two-dimensional electron gases into each other. Based on this insight, we construct a phenomenological holographic model which captures many features of the fractional quantum Hall effect. Using an -invariant Einstein-Maxwell-axio-dilaton theory capturing the important modular transformation properties of quantum Hall physics, we find dyonic diatonic black hole solutions which are gapped and have a Hall conductivity equal to the filling fraction, as expected for quantum Hall states. We also provide several technical results on the general behavior of the gauge field fluctuations around these dyonic dilatonic black hole solutions: we specify a sufficient criterion for IR normalizability of the fluctuations, demonstrate the preservation of the gap under the action, and prove that the singularity of the fluctuation problem in the presence of a magnetic field is an accessory singularity. We finish with a preliminary investigation of the possible IR scaling solutions of our model and some speculations on how they could be important for the observed universality of quantum Hall transitions.

Spontaneous magnetization and anomalous Hall effect in an emergent Dice lattice

PubMed Central

Dutta, Omjyoti; Przysiężna, Anna; Zakrzewski, Jakub

2015-01-01

Ultracold atoms in optical lattices serve as a tool to model different physical phenomena appearing originally in condensed matter. To study magnetic phenomena one needs to engineer synthetic fields as atoms are neutral. Appropriately shaped optical potentials force atoms to mimic charged particles moving in a given field. We present the realization of artificial gauge fields for the observation of anomalous Hall effect. Two species of attractively interacting ultracold fermions are considered to be trapped in a shaken two dimensional triangular lattice. A combination of interaction induced tunneling and shaking can result in an emergent Dice lattice. In such a lattice the staggered synthetic magnetic flux appears and it can be controlled with external parameters. The obtained synthetic fields are non-Abelian. Depending on the tuning of the staggered flux we can obtain either anomalous Hall effect or its quantized version. Our results are reminiscent of Anomalous Hall conductivity in spin-orbit coupled ferromagnets. PMID:26057635

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jedrecy, N., E-mail: jedrecy@insp.jussieu.fr; Hamieh, M.; Hebert, C.

We show that the well-established universal scaling σ{sub xy}{sup AHE} ∼ σ{sub xx}{sup 1.6} between anomalous Hall and longitudinal conductivities in the low conductivity regime (σ{sub xx} < 10{sup 4} Ω{sup −1} cm{sup −1}) transforms into the scaling σ{sub xy}{sup AHE} ∼ σ{sub xx}{sup 2} at the onset of strong electron localization. The crossover between the two relations is observed in magnetite-derived Zn{sub x}Fe{sub 3-x}O{sub 4} thin films where an insulating/hopping regime follows a bad metal/hopping regime below the Verwey transition temperature T{sub v}. Our results demonstrate that electron localization effects come into play in the anomalous Hall effect (AHE)more » modifying significantly the scaling exponent. In addition, the thermal evolution of the anomalous Hall resistivity suggests the existence of spin polarons whose size would decrease below T{sub v}.« less

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jun Sung; Seo, Sung Seok A; Chisholm, Matthew F

2010-01-01

We report magnetotransport properties of heterointerfaces between the Mott insulator LaTiO{sub 3} and the band insulator SrTiO{sub 3} in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO{sub 3} at low temperatures and its electric fieldmore » dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.« less

Ionization Chemistry and Role of Grains on Non-ideal MHD Effects in Protoplanetary Disks

NASA Astrophysics Data System (ADS)

Xu, Rui; Bai, Xue-Ning; Oberg, Karin I.

2015-01-01

Ionization in protoplanetary disks (PPDs) is one of the key elements for understanding disk chemistry. It also determines the coupling between gas and magnetic fields hence strongly affect PPD gas dynamics. We study the ionization chemistry in the presence of grains in the midplane region of PPDs and its impact on gas conductivity reflected in non-ideal MHD effects including Ohmic resistivity, Hall effect and ambipolar diffusion. We first develop a reduced chemical reaction network from the UMIST database. The reduced network contains much smaller number of species and reactions while yields reliable estimates of the disk ionization level compared with the full network. We further show that grains are likely the dominant charge carrier in the midplane regions of the inner disk, which significantly affects the gas conductivity. In particular, ambipolar diffusion is strongly reduced and the Hall coefficient changes sign in the presence of strong magnetic field. The latter provides a natural mechanism to the saturation of the Hall-shear instability.

Effects of an Internally-Mounted Cathode on Hall Thruster Plume Properties

NASA Technical Reports Server (NTRS)

Hofer, Richard R.; Johnson, Lee K.; Goebel, Dan M.; Fitzgerald, Dennis J.

2006-01-01

The effects of cathode position on the plume properties of an 8 kW BHT-8000 Busek Hall thruster are discussed. Experiments were conducted at the Jet Propulsion Laboratory (JPL) in a vacuum chamber suitable for the development and qualification of high-power Hall thrusters. Multi-mode Hall thruster operation was demonstrated at operating conditions ranging from 200-500 V discharge voltage, 10-40 A discharge current, and 2-8 kW discharge power. Reductions in plume divergence and increased near-field plume symmetries were found to result from the use of an internally-mounted cathode instead of the traditional externally-mounted configuration. High-current hollow cathodes developed at JPL utilizing lanthanum hexaboride (LaB6) emitters were also demonstrated. Discharge currents up to 100 A were achieved with the cathode operating alone and up to 40 A during operation with the Hall thruster. LaB6 cathodes were investigated because of their potential to reduce overall system cost and risk due to less stringent xenon purity and handling requirements.

Covariant Conservation Laws and the Spin Hall Effect in Dirac-Rashba Systems

NASA Astrophysics Data System (ADS)

Milletarı, Mirco; Offidani, Manuel; Ferreira, Aires; Raimondi, Roberto

2017-12-01

We present a theoretical analysis of two-dimensional Dirac-Rashba systems in the presence of disorder and external perturbations. We unveil a set of exact symmetry relations (Ward identities) that impose strong constraints on the spin dynamics of Dirac fermions subject to proximity-induced interactions. This allows us to demonstrate that an arbitrary dilute concentration of scalar impurities results in the total suppression of nonequilibrium spin Hall currents when only Rashba spin-orbit coupling is present. Remarkably, a finite spin Hall conductivity is restored when the minimal Dirac-Rashba model is supplemented with a spin-valley interaction. The Ward identities provide a systematic way to predict the emergence of the spin Hall effect in a wider class of Dirac-Rashba systems of experimental relevance and represent an important benchmark for testing the validity of numerical methodologies.

Effect of segmented electrode length on the performances of Hall thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Chen, Long; Liu, Guangrui; Bian, Xingyu; Yin, Yan

2016-09-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of ionization rate in discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected.

Anomalous Nernst and thermal Hall effects in tilted Weyl semimetals

NASA Astrophysics Data System (ADS)

Ferreiros, Yago; Zyuzin, A. A.; Bardarson, Jens H.

2017-09-01

We study the anomalous Nernst and thermal Hall effects in a linearized low-energy model of a tilted Weyl semimetal, with two Weyl nodes separated in momentum space. For inversion symmetric tilt, we give analytic expressions in two opposite limits: For a small tilt, corresponding to a type-I Weyl semimetal, the Nernst conductivity is finite and independent of the Fermi level; for a large tilt, corresponding to a type-II Weyl semimetal, it acquires a contribution depending logarithmically on the Fermi energy. This result is in a sharp contrast to the nontilted case, where the Nernst response is known to be zero in the linear model. The thermal Hall conductivity similarly acquires Fermi surface contributions, which add to the Fermi level-independent, zero-tilt result, and is suppressed as one over the tilt parameter at half filling in the type-II phase. In the case of inversion-breaking tilt, with the tilting vector of equal modulus in the two Weyl cones, all Fermi surface contributions to both anomalous responses cancel out, resulting in zero Nernst conductivity. We discuss two possible experimental setups, representing open and closed thermoelectric circuits.

Superconducting quantum spin-Hall systems with giant orbital g-factors

NASA Astrophysics Data System (ADS)

Hankiewicz, Ewelina; Reinthaler, Rolf; Tkachov, Grigory

Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. Here, we describe a novel superconducting quantum spin-Hall effect (quantum spin Hall system in the proximity to the s-wave superconductor and in the orbital in-plane magnetic field), which is protected against elastic backscattering by combined time-reversal and particle-hole symmetry. This effect is characterized by spin-polarized edge states, which can be manipulated in weak magnetic fields due to a giant effective orbital g-factor, allowing the generation of spin currents. The phenomenon provides a novel solution to the outstanding challenge of detecting the spin-polarization of the edge states. Here we propose the detection of the edge polarization in the three-terminal junction using unusual transport properties of superconducting quantum Hall-effect: a non-monotonic excess current and a zero-bias conductance splitting. We thank for the financial support the German Science Foundation (DFG), Grants No HA 5893/4-1 within SPP 1666, HA5893/5-2 within FOR1162 and TK60/1-1 (G.T.), as well the ENB graduate school ``Topological insulators''.

Response of two-band systems to a single-mode quantized field

NASA Astrophysics Data System (ADS)

Shi, Z. C.; Shen, H. Z.; Wang, W.; Yi, X. X.

2016-03-01

The response of topological insulators (TIs) to an external weakly classical field can be expressed in terms of Kubo formula, which predicts quantized Hall conductivity of the quantum Hall family. The response of TIs to a single-mode quantized field, however, remains unexplored. In this work, we take the quantum nature of the external field into account and define a Hall conductance to characterize the linear response of a two-band system to the quantized field. The theory is then applied to topological insulators. Comparisons with the traditional Hall conductance are presented and discussed.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3 -xGeTe2

NASA Astrophysics Data System (ADS)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; Petrovic, C.

2018-04-01

We report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe3 -xGeTe2 (x ≈0.36 ) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρx y/μ0Heff and longitudinal resistivity ρxx 2M /μ0Heff implies that the AHE in Fe3 -xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxy A below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.

First Observation of a Hall Effect in a Dusty Plasma: A Charged Granular Flow with Relevance to Planetary Rings

NASA Astrophysics Data System (ADS)

Eiskowitz, Skylar; Ballew, Nolan; Rojas, Rubén; Lathrop, Daniel

2017-11-01

The particles in Saturn's rings exhibit complex dynamic behavior. They experience solar radiation pressure, electromagnetic forces, and granular collisions. To investigate the possibility of the Hall Effect in the dusty plasma that comprise Saturn's rings, we have built an experiment that demonstrates the Hall Effect in granular matter. We focus on the Hall Effect because the rings' grains become collisionally charged and experience Saturn's dipolar magnetic field and Lorentz forces as they orbit. The experimental setup includes a closed ring-like track where granular matter is forced to circulate driven by compressed air. The structure sits between two electromagnets so that a portion of the track experiences up to a 0.2 T magnetic field. We vary the strength of the field and the speed of the particles. We report the voltage differences between two conducting plates on opposite sides of the track. If Saturn's rings do experience the Hall Effect, the inside and outside of the rings will develop a charge separation that can lead to a radial electric field and various phenomena including orbital effects due to the additional electric forces. Observational evidence from Cassini suggests that Saturn's rings exhibit lighting, supporting the notion that they are electrically charged. TREND REU program sponsored by the National Science Foundation.

Thermal Hall conductivity in the spin-triplet superconductor with broken time-reversal symmetry

NASA Astrophysics Data System (ADS)

Imai, Yoshiki; Wakabayashi, Katsunori; Sigrist, Manfred

2017-01-01

Motivated by the spin-triplet superconductor Sr2RuO4 , the thermal Hall conductivity is investigated for several pairing symmetries with broken time-reversal symmetry. In the chiral p -wave phase with a fully opened quasiparticle excitation gap, the temperature dependence of the thermal Hall conductivity has a temperature linear term associated with the topological property directly and an exponential term, which shows a drastic change around the Lifshitz transition. Examining f -wave states as alternative candidates with d =Δ0z ̂(kx2-ky2) (kx±i ky) and Δ0z ̂kxky(kx±i ky) with gapless quasiparticle excitations, we study the temperature dependence of the thermal Hall conductivity, where for the former state the thermal Hall conductivity has a quadratic dependence on temperature, originating from the linear dispersions, in addition to linear and exponential behavior. The obtained result may enable us to distinguish between the chiral p -wave and f -wave states in Sr2RuO4 .

Fractional Quantum Hall Effect in Infinite-Layer Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naud, J. D.; Pryadko, Leonid P.; Sondhi, S. L.

2000-12-18

Stacked two dimensional electron systems in transverse magnetic fields exhibit three dimensional fractional quantum Hall phases. We analyze the simplest such phases and find novel bulk properties, e.g., irrational braiding. These phases host ''one and a half'' dimensional surface phases in which motion in one direction is chiral. We offer a general analysis of conduction in the latter by combining sum rule and renormalization group arguments, and find that when interlayer tunneling is marginal or irrelevant they are chiral semimetals that conduct only at T>0 or with disorder.

Theory of the Quantized Hall Conductance in Periodic Systems: a Topological Analysis.

NASA Astrophysics Data System (ADS)

Czerwinski, Michael Joseph

The integral quantization of the Hall conductance in two-dimensional periodic systems is investigated from a topological point of view. Attention is focused on the contributions from the electronic sub-bands which arise from perturbed Landau levels. After reviewing the theoretical work leading to the identification of the Hall conductance as a topological quantum number, both a determination and interpretation of these quantized values for the sub-band conductances is made. It is shown that the Hall conductance of each sub-band can be regarded as the sum of two terms which will be referred to as classical and nonclassical. Although each of these contributions individually leads to a fractional conductance, the sum of these two contributions does indeed yield an integer. These integral conductances are found to be given by the solution of a simple Diophantine equation which depends on the periodic perturbation. A connection between the quantized value of the Hall conductance and the covering of real space by the zeroes of the sub-band wavefunctions allows for a determination of these conductances under more general potentials. A method is described for obtaining the conductance values from only those states bordering the Brillouin zone, and not the states in its interior. This method is demonstrated to give Hall conductances in agreement with those obtained from the Diophantine equation for the sinusoidal potential case explored earlier. Generalizing a simple gauge invariance argument from real space to k-space, a k-space 'vector potential' is introduced. This allows for a explicit identification of the Hall conductance with the phase winding number of the sub-band wavefunction around the Brillouin zone. The previously described division of the Hall conductance into classical and nonclassical contributions is in this way made more rigorous; based on periodicity considerations alone, these terms are identified as the winding numbers associated with (i) the basis states and (ii) the coefficients of these basis states, respectively. In this way a general Diophantine equation, independent of the periodic potential, is obtained. Finally, the use of the 'parallel transport' of state vectors in the determination of an overall phase convention for these states is described. This is seen to lead to a simple and straightforward method for determining the Hall conductance. This method is based on the states directly, without reference to the particular component wavefunctions of these states. Mention is made of the generality of calculations of this type, within the context of the geometric (or Berry) phases acquired by systems under an adiabatic modification of their environment.

Nondestructive hall coefficient measurements using ACPD techniques

NASA Astrophysics Data System (ADS)

Velicheti, Dheeraj; Nagy, Peter B.; Hassan, Waled

2018-04-01

Hall coefficient measurements offer great opportunities as well as major challenges for nondestructive materials characterization. The Hall effect is produced by the magnetic Lorentz force acting on moving charge carriers in the presence of an applied magnetic field. The magnetic perturbation gives rise to a Hall current that is normal to the conduction current but does not directly perturb the electric potential distribution. Therefore, Hall coefficient measurements usually exploit the so-called transverse galvanomagnetic potential drop effect that arises when the Hall current is intercepted by the boundaries of the specimen and thereby produce a measurable potential drop. In contrast, no Hall potential is produced in a large plate in the presence of a uniform normal field at quasi-static low frequencies. In other words, conventional Hall coefficient measurements are inherently destructive since they require cutting the material under tests. This study investigated the feasibility of using alternating current potential drop (ACPD) techniques for nondestructive Hall coefficient measurements in plates. Specifically, the directional four-point square-electrode configuration is investigated with superimposed external magnetic field. Two methods are suggested to make Hall coefficient measurements in large plates without destructive machining. At low frequencies, constraining the bias magnetic field can replace constraining the dimensions of the specimen, which is inherently destructive. For example, when a cylindrical permanent magnet is used to provide the bias magnetic field, the peak Hall voltage is produced when the diameter of the magnet is equal to the diagonal of the square ACPD probe. Although this method is less effective than cutting the specimen to a finite size, the loss of sensitivity is less than one order of magnitude even at very low frequencies. In contrast, at sufficiently high inspection frequencies the magnetic field of the Hall current induces a strong enough Hall electric field that produces measurable potential differences between points lying on the path followed by the Hall current even when it is not intercepted by either the edge of the specimen or the edge of the magnetic field. The induced Hall voltage increases proportionally to the square root of frequency as the current is squeezed into a shallow electromagnetic skin of decreasing depth. This approach could be exploited to measure the Hall coefficient near the surface at high frequencies without cutting the specimen.

Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect

DOE PAGES

Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; ...

2015-11-06

We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/Y 3Fe 5O 12 (YIG) bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc currentmore » through the inverse spin Hall effect. The voltage is measured with applied magnetic field directions that range in-plane to nearly perpendicular. In conclusion, we find that for magnetic fields that are mostly out-of-plane, an imaginary component of the spin mixing conductance is required to model our data.« less

Transport properties of β-FeSi2

NASA Astrophysics Data System (ADS)

Arushanov, Ernest; Lisunov, Konstantin G.

2015-07-01

The aim of this paper is to summarize considerable experimental efforts undertaken within the last decades in the investigations of transport properties of β-FeSi2. The β-FeSi2 compound is the most investigated among a family of semiconducting silicides. This material has received considerable attention as an attractive material for optoelectronic, photonics, photovoltaics and thermoelectric applications. Previous reviews of the transport properties of β-FeSi2 have been given by Lange and Ivanenko et al. about 15 years ago. The Hall effect, the conductivity, the mobility and the magnetoresistance data are presented. Main attention is paid to the discussion of the impurity (defect) band conductivity, the anomalous Hall effect, the scattering mechanisms of charge carriers, as well as to the hopping conduction and the magnetoresistance.

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

PubMed

Chen, Kaixiang; Zhao, Xiaolong; Mesli, Abdelmadjid; He, Yongning; Dan, Yaping

2018-04-24

Photoconductors have extraordinarily high gain in quantum efficiency, but the origin of the gain has remained in dispute for decades. In this work, we employ photo Hall effect to reveal the gain mechanisms by probing the dynamics of photogenerated charge carriers in silicon nanowire photoconductors. The results reveal that a large number of photogenerated minority electrons are localized in the surface depletion region and surface trap states. The same number of excess hole counterparts is left in the nanowire conduction channel, resulting in the fact that excess holes outnumber the excess electrons in the nanowire conduction channel by orders of magnitude. The accumulation of the excess holes broadens the conduction channel by narrowing down the depletion region, which leads to the experimentally observed high photo gain.

Levitation of current carrying states in the lattice model for the integer quantum Hall effect.

PubMed

Koschny, T; Potempa, H; Schweitzer, L

2001-04-23

The disorder driven quantum Hall to insulator transition is investigated for a two-dimensional lattice model. The Hall conductivity and the localization length are calculated numerically near the transition. For uncorrelated and weakly correlated disorder potentials the current carrying states are annihilated by the negative Chern states originating from the band center. In the presence of correlated disorder potentials with correlation length larger than approximately half the lattice constant the floating up of the critical states in energy without merging is observed. This behavior is similar to the levitation scenario proposed for the continuum model.

Photoinduced topological phase transition and spin polarization in a two-dimensional topological insulator

NASA Astrophysics Data System (ADS)

Chen, M. N.; Su, W.; Deng, M. X.; Ruan, Jiawei; Luo, W.; Shao, D. X.; Sheng, L.; Xing, D. Y.

2016-11-01

A great deal of attention has been paid to the topological phases engineered by photonics over the past few years. Here, we propose a topological quantum phase transition to a quantum anomalous Hall (QAH) phase induced by off-resonant circularly polarized light in a two-dimensional system that is initially in a quantum spin Hall phase or a trivial insulator phase. This provides an alternative method to realize the QAH effect, other than magnetic doping. The circularly polarized light effectively creates a Zeeman exchange field and a renormalized Dirac mass, which are tunable by varying the intensity of the light and drive the quantum phase transition. Both the transverse and longitudinal Hall conductivities are studied, and the former is consistent with the topological phase transition when the Fermi level lies in the band gap. A highly controllable spin-polarized longitudinal electrical current can be generated when the Fermi level is in the conduction band, which may be useful for designing topological spintronics.

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

NASA Astrophysics Data System (ADS)

Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

2011-07-01

We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

Valley-isospin dependence of the quantum Hall effect in a graphene p-n junction

NASA Astrophysics Data System (ADS)

Tworzydło, J.; Snyman, I.; Akhmerov, A. R.; Beenakker, C. W. J.

2007-07-01

We calculate the conductance G of a bipolar junction in a graphene nanoribbon, in the high-magnetic-field regime where the Hall conductance in the p -doped and n -doped regions is 2e2/h . In the absence of intervalley scattering, the result G=(e2/h)(1-cosΦ) depends only on the angle Φ between the valley isospins ( =Bloch vectors representing the spinor of the valley polarization) at the two opposite edges. This plateau in the conductance versus Fermi energy is insensitive to electrostatic disorder, while it is destabilized by the dispersionless edge state which may exist at a zigzag boundary. A strain-induced vector potential shifts the conductance plateau up or down by rotating the valley isospin.

Contactless measurement of alternating current conductance in quantum Hall structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drichko, I. L.; Diakonov, A. M.; Malysh, V. A.

2014-10-21

We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods—acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use themore » fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized p-SiGe/Ge/SiGe heterostructure.« less

Imaginary part of Hall conductivity in a tilted doped Weyl semimetal with both broken time-reversal and inversion symmetry

NASA Astrophysics Data System (ADS)

Mukherjee, S. P.; Carbotte, J. P.

2018-01-01

We consider a Weyl semimetal with finite doping and tilt within a continuum model Hamiltonian with both broken time-reversal and inversion symmetry. We calculate the absorptive part of the anomalous ac Hall conductivity as a function of photon energy Ω for both type-I and type-II Weyl semimetals. For a given Weyl node, changing the sign of its chirality or of its tilt changes the sign of its contribution to the absorptive Hall conductivity with no change in magnitude. For a noncentrosymmetric system we find that there are ranges of photon energies for which only the positive or only the negative-chirality node contributes to the imaginary (absorptive) part of the Hall conductivity. There are also other photon energies where both chiralities contribute, and there can be other ranges of Ω where there is no absorption associated with the ac Hall conductivity in type-I semimetals and regions where it is instead constant for type-II semimetals. We comment on implications for the absorption of circularly polarized light.

Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

DOE PAGES

Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David; ...

2018-03-29

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

Magnetic phase dependence of the anomalous Hall effect in Mn3Sn single crystals

NASA Astrophysics Data System (ADS)

Sung, N. H.; Ronning, F.; Thompson, J. D.; Bauer, E. D.

2018-03-01

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T1 = 275 K and T2 = 200 K, below the antiferromagnetic phase transition at TN ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω-1 cm-1 to near zero below T1, coincident with the vanishing of the weak ferromagnetic moment. This illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched on and off by a subtle change in the symmetry of the magnetic structure near room temperature.

Hidden-Symmetry-Protected Topological Semimetals on a Square Lattice

NASA Astrophysics Data System (ADS)

Hou, Jing-Min

2013-09-01

We study a two-dimensional fermionic square lattice, which supports the existence of a two-dimensional Weyl semimetal, quantum anomalous Hall effect, and 2π-flux topological semimetal in different parameter ranges. We show that the band degenerate points of the two-dimensional Weyl semimetal and 2π-flux topological semimetal are protected by two distinct novel hidden symmetries, which both correspond to antiunitary composite operations. When these hidden symmetries are broken, a gap opens between the conduction and valence bands, turning the system into a insulator. With appropriate parameters, a quantum anomalous Hall effect emerges. The degenerate point at the boundary between the quantum anomalous Hall insulator and trivial band insulator is also protected by the hidden symmetry.

Roles of nonlocal conductivity on spin Hall angle measurement

NASA Astrophysics Data System (ADS)

Chen, Kai; Zhang, Shufeng

2017-10-01

Spin Hall angle characterizes the rate of spin-charge current conversion and it has become one of the most important material parameters for spintronics physics and device application. A long-standing controversy is that the spin Hall angles for a given material measured by spin pumping and by spin Hall torque experiments are inconsistent and they could differ by as much as an order of magnitude. By using the linear response spin transport theory, we explicitly formulate the relation between the spin Hall angle and measured variables in different experiments. We find that the nonlocal conductivity inherited in the layered structure plays a key role to resolve conflicting values of the spin Hall angle. We provide a generalized scheme for extracting spin transport coefficients from experimental data.

Gauge Physics of Spin Hall Effect

PubMed Central

Tan, Seng Ghee; Jalil, Mansoor B. A.; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi

2015-01-01

Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be instead of −, and Rashba heavy hole instead of −. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity. PMID:26689260

Field experiment evidence of substantive, attributional, and behavioral persuasion by members of Congress in online town halls.

PubMed

Minozzi, William; Neblo, Michael A; Esterling, Kevin M; Lazer, David M J

2015-03-31

Do leaders persuade? Social scientists have long studied the relationship between elite behavior and mass opinion. However, there is surprisingly little evidence regarding direct persuasion by leaders. Here we show that political leaders can persuade their constituents directly on three dimensions: substantive attitudes regarding policy issues, attributions regarding the leaders' qualities, and subsequent voting behavior. We ran two randomized controlled field experiments testing the causal effects of directly interacting with a sitting politician. Our experiments consist of 20 online town hall meetings with members of Congress conducted in 2006 and 2008. Study 1 examined 19 small meetings with members of the House of Representatives (average 20 participants per town hall). Study 2 examined a large (175 participants) town hall with a senator. In both experiments we find that participating has significant and substantively important causal effects on all three dimensions of persuasion but no such effects on issues that were not discussed extensively in the sessions. Further, persuasion was not driven solely by changes in copartisans' attitudes; the effects were consistent across groups.

Field experiment evidence of substantive, attributional, and behavioral persuasion by members of Congress in online town halls

PubMed Central

Minozzi, William; Neblo, Michael A.; Esterling, Kevin M.; Lazer, David M. J.

2015-01-01

Do leaders persuade? Social scientists have long studied the relationship between elite behavior and mass opinion. However, there is surprisingly little evidence regarding direct persuasion by leaders. Here we show that political leaders can persuade their constituents directly on three dimensions: substantive attitudes regarding policy issues, attributions regarding the leaders’ qualities, and subsequent voting behavior. We ran two randomized controlled field experiments testing the causal effects of directly interacting with a sitting politician. Our experiments consist of 20 online town hall meetings with members of Congress conducted in 2006 and 2008. Study 1 examined 19 small meetings with members of the House of Representatives (average 20 participants per town hall). Study 2 examined a large (175 participants) town hall with a senator. In both experiments we find that participating has significant and substantively important causal effects on all three dimensions of persuasion but no such effects on issues that were not discussed extensively in the sessions. Further, persuasion was not driven solely by changes in copartisans’ attitudes; the effects were consistent across groups. PMID:25775516

Photonic topological boundary pumping as a probe of 4D quantum Hall physics

NASA Astrophysics Data System (ADS)

Zilberberg, Oded; Huang, Sheng; Guglielmon, Jonathan; Wang, Mohan; Chen, Kevin P.; Kraus, Yaacov E.; Rechtsman, Mikael C.

2018-01-01

When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.

Photonic topological boundary pumping as a probe of 4D quantum Hall physics.

PubMed

Zilberberg, Oded; Huang, Sheng; Guglielmon, Jonathan; Wang, Mohan; Chen, Kevin P; Kraus, Yaacov E; Rechtsman, Mikael C

2018-01-03

When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.

Hall thruster with grooved walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Hong; Ning Zhongxi; Yu Daren

2013-02-28

Axial-oriented and azimuthal-distributed grooves are formed on channel walls of a Hall thruster after the engine undergoes a long-term operation. Existing studies have demonstrated the relation between the grooves and the near-wall physics, such as sheath and electron near-wall transport. The idea to optimize the thruster performance with such grooves was also proposed. Therefore, this paper is devoted to explore the effects of wall grooves on the discharge characteristics of a Hall thruster. With experimental measurements, the variations on electron conductivity, ionization distribution, and integrated performance are obtained. The involved physical mechanisms are then analyzed and discussed. The findings helpmore » to not only better understand the working principle of Hall thruster discharge but also establish a physical fundamental for the subsequent optimization with artificial grooves.« less

Residence Hall Student Satisfaction with Interim Alcohol Policy. Office for Student Affairs Research Bulletin; v15 n4 Jul74.

ERIC Educational Resources Information Center

Seabourg, Deborah; And Others

At the beginning of the 1973-74 academic year alcohol usage was officially permitted for the first time in residence halls at the Twin Cities Campus of the University of Minnesota. To determine residents' perceptions of the effects of the change in drinking policy, interviews were conducted with 49 current dormitory residents, who had also lived…

Spin-pumping and spin-Hall magnetoresistance (SMR) at transition metal interfaces: case of (Co/Pt) (Conference Presentation)

NASA Astrophysics Data System (ADS)

Jaffres, Henri; George, Jean-Marie; Laczowski, Piotr; Reyren, Nicolas; Vila, Laurent

2016-10-01

Spintronic phenomena are made possible via the diffusion of spin-currents or the generation of spin-accumulation. Spinorbitronics uses the electronic spin-orbit coupling (SOC) and emerges as a new route to create spin-currents in the transverse direction of the charge flow. This is made possible via the intrinsic spin Hall conduction (SHE) of heavy metals or extrinsic spin-Hall effect of metallic alloys. SHE borrows its concept from the anomalous Hall effect (AHE) where the relativistic spin-orbit coupling (SOC) promotes an asymmetric deflection of the spin-current. SHE is now at the base of magnetization commutation and domain wall moving via spin-orbit torque (SOT) and spin-transfer torque operations in the FMR regime. However, the exact anatomy of SOT at spin-orbit active interfaces like Co/Pt is still missing. In the case of Pt, recent studies have put forward the major role played by i) the spin-memory loss (SML) and the electronic transparency at 3d/5d interfaces and ii) the inhomogeneity of the conductivity in the current-in-plane (CIP) geometry to explain the discrepancy in the SHE. Ingredients to consider then are the profiles of both the conductivity and spin-current across the multilayers and spin-transmission. In this talk, we will present robust SMR measurements observed on NiCo/Pt multilayer stacks characterized by a perpendicular magnetic anisotropy (PMA). The SMR occurs for both in-plane magnetization rotation or from nominal out-of-plane to the in-plane direction transverse to the current flow. This clearly departs from standard AMR or pure interfacial anisotropic-AMR symmetries. We analyze in large details our SMR signals for the whole series of samples owing to two main guidelines: i) we consider the exact conductivity profile across the multilayers, in particular near the Co/Pt interface, via the Camley-Barnas approach and ii) we derive the spin current profile generated by SHE along the perpendicular direction responsible for SMR. We consider pure interfacial spin dissipation by SML (decoherence, interfacial enhanced scattering) and give out a general analytical expression for SMR. Our conclusions go towards a robust value of the spin-Hall conductivity and SML like previously published. The CIP spin-Hall angle, of the order of 0.10 is larger than the one found in spin-pumping experiments (CPP geometry) owing to the smaller conductivity at the Co/Pt interface, in agreement with the results of STT-FMR experiments.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 − x GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

2018-04-09

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

DOE PAGES

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; ...

2018-04-09

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Plasmon Geometric Phase and Plasmon Hall Shift

NASA Astrophysics Data System (ADS)

Shi, Li-kun; Song, Justin C. W.

2018-04-01

The collective plasmonic modes of a metal comprise a simple pattern of oscillating charge density that yields enhanced light-matter interaction. Here we unveil that beneath this familiar facade plasmons possess a hidden internal structure that fundamentally alters its dynamics. In particular, we find that metals with nonzero Hall conductivity host plasmons with an intricate current density configuration that sharply departs from that of ordinary zero Hall conductivity metals. This nontrivial internal structure dramatically enriches the dynamics of plasmon propagation, enabling plasmon wave packets to acquire geometric phases as they scatter. At boundaries, these phases accumulate allowing plasmon waves that reflect off to experience a nonreciprocal parallel shift. This plasmon Hall shift, tunable by Hall conductivity as well as plasmon wavelength, displaces the incident and reflected plasmon trajectories and can be readily probed by near-field photonics techniques. Anomalous plasmon geometric phases dramatically enrich the nanophotonics toolbox, and yield radical new means for directing plasmonic beams.

Estimating the spin diffusion length and the spin Hall angle from spin pumping induced inverse spin Hall voltages

NASA Astrophysics Data System (ADS)

Roy, Kuntal

2017-11-01

There exists considerable confusion in estimating the spin diffusion length of materials with high spin-orbit coupling from spin pumping experiments. For designing functional devices, it is important to determine the spin diffusion length with sufficient accuracy from experimental results. An inaccurate estimation of spin diffusion length also affects the estimation of other parameters (e.g., spin mixing conductance, spin Hall angle) concomitantly. The spin diffusion length for platinum (Pt) has been reported in the literature in a wide range of 0.5-14 nm, and in particular it is a constant value independent of Pt's thickness. Here, the key reasonings behind such a wide range of reported values of spin diffusion length have been identified comprehensively. In particular, it is shown here that a thickness-dependent conductivity and spin diffusion length is necessary to simultaneously match the experimental results of effective spin mixing conductance and inverse spin Hall voltage due to spin pumping. Such a thickness-dependent spin diffusion length is tantamount to the Elliott-Yafet spin relaxation mechanism, which bodes well for transitional metals. This conclusion is not altered even when there is significant interfacial spin memory loss. Furthermore, the variations in the estimated parameters are also studied, which is important for technological applications.

Spectral Analysis of Non-ideal MRI Modes: The Effect of Hall Diffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohandas, Gopakumar; Pessah, Martin E., E-mail: gopakumar@nbi.ku.dk, E-mail: mpessah@nbi.ku.dk

The effect of magnetic field diffusion on the stability of accretion disks is a problem that has attracted considerable interest of late. In particular, the Hall effect has the potential to bring about remarkable changes in the dynamical behavior of disks that are without parallel. In this paper, we conduct a systematic examination of the linear eigenmodes in a weakly magnetized differentially rotating gas with a special focus on Hall diffusion. We first develop a geometrical representation of the eigenmodes and provide a detailed quantitative description of the polarization properties of the oscillatory modes under the combined influence of themore » Coriolis and Hall effects. We also analyze the effects of magnetic diffusion on the structure of the unstable modes and derive analytical expressions for the kinetic and magnetic stresses and energy densities associated with the non-ideal magnetorotational instability (MRI). Our analysis explicitly demonstrates that, if the dissipative effects are relatively weak, the kinetic stresses and energies make up the dominant contribution to the total stress and energy density when the equilibrium angular momentum and magnetic field vectors are anti-parallel. This is in sharp contrast to what is observed in the case of the ideal or dissipative MRI. We conduct shearing box simulations and find very good agreement with the results derived from linear theory. Because the modes under consideration are also exact solutions of the nonlinear equations, the unconventional nature of the kinetic and magnetic stresses may have significant implications for the nonlinear evolution in some regions of protoplanetary disks.« less

Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

NASA Astrophysics Data System (ADS)

Yavari, H.; Mokhtari, M.; Bayervand, A.

2015-03-01

Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

Spin Funneling for Enhanced Spin Injection into Ferromagnets

PubMed Central

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-01-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory. PMID:27374496

Metal-to-insulator switching in quantum anomalous Hall states

DOE PAGES

Kou, Xufeng; Pan, Lei; Wang, Jing; ...

2015-10-07

After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr 0.12Bi 0.26Sb 0.62) 2Te 3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phasemore » diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.« less

Spin Funneling for Enhanced Spin Injection into Ferromagnets

NASA Astrophysics Data System (ADS)

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-07-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory.

Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diniz, G. S., E-mail: ginetom@gmail.com; Guassi, M. R.; Qu, F.

2013-12-28

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of themore » exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.« less

Determination of the spin Hall angle in single-crystalline Pt films from spin pumping experiments

NASA Astrophysics Data System (ADS)

Keller, Sascha; Mihalceanu, Laura; Schweizer, Matthias R.; Lang, Philipp; Heinz, Björn; Geilen, Moritz; Brächer, Thomas; Pirro, Philipp; Meyer, Thomas; Conca, Andres; Karfaridis, Dimitrios; Vourlias, George; Kehagias, Thomas; Hillebrands, Burkard; Papaioannou, Evangelos Th

2018-05-01

We report on the determination of the spin Hall angle in ultra-clean, defect-reduced epitaxial Pt films. By applying vector network analyzer ferromagnetic resonance spectroscopy to a series of single crystalline Fe (12 nm) /Pt (t Pt) bilayers we determine the real part of the spin mixing conductance (4.4 ± 0.2) × 1019 m‑2 and reveal a very small spin diffusion length in the epitaxial Pt (1.1 ± 0.1) nm film. We investigate the spin pumping and ISHE in a stripe microstucture excited by a microwave coplanar waveguide antenna. By using their different angular dependencies, we distinguish between spin rectification effects and the inverse spin Hall effect. The relatively large value of the spin Hall angle (5.7 ± 1.4)% shows that ultra-clean e-beam evaporated non-magnetic materials can also have a comparable spin-to-charge current conversion efficiency as sputtered high resistivity layers.

Magnon Hall effect on the Lieb lattice.

PubMed

Cao, Xiaodong; Chen, Kai; He, Dahai

2015-04-29

Ferromagnetic insulators without inversion symmetry may show magnon Hall effect (MHE) in the presence of a temperature gradient due to the existence of Dzyaloshinskii-Moriya interaction (DMI). In this theoretical study, we investigate MHE on a lattice with inversion symmetry, namely the Lieb lattice, where the DMI is introduced by adding an external electric field. We show the nontrivial topology of this model by examining the existence of edge states and computing the topological phase diagram characterized by the Chern numbers of different bands. Together with the topological phase diagram, we can further determine the sign and magnitude of the transverse thermal conductivity. The impact of the flat band possessed by this model on the thermal conductivity is discussed by computing the Berry curvature analytically.

Strong Enhancement of the Spin Hall Effect by Spin Fluctuations near the Curie Point of FexPt1 -x Alloys

NASA Astrophysics Data System (ADS)

Ou, Yongxi; Ralph, D. C.; Buhrman, R. A.

2018-03-01

Robust spin Hall effects (SHE) have recently been observed in nonmagnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely, side jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1 -x alloys near their Curie point, tunable with x . This results in a dampinglike spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 ±0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM /FePt interface, and determine the spin diffusion length in these FexPt1 -x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications.

Nonequilibrium Fractional Hall Response After a Topological Quench

NASA Astrophysics Data System (ADS)

Unal, Nur; Mueller, Erich; Oktel, M. O.

When a system is suddenly driven between two topologically different phases, aspects of the original topology survive the quench, but most physical observables (edge currents, Hall conductivity) appear to be non-universal. I will present the non-equilibrium Hall response of a Chern insulator following a quench where the mass term of a single Dirac cone changes sign. In the limit where the physics is dominated by a single Dirac cone, we theoretically find that the Hall conductivity universally changes by two-thirds of the quantum of conductivity. I will analyze this universal behavior by considering the Haldane model, and discuss experimental aspects for its observation in cold atoms. This work is supported by TUBITAK, NSFPHY-1508300, ARO-MURI W9111NF-14-1-0003.

Excitons in the Fractional Quantum Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-09-01

Quasiparticles of charge 1/m in the Fractional Quantum Hall Effect form excitons, which are collective excitations physically similar to the transverse magnetoplasma oscillations of a Wigner crystal. A variational exciton wavefunction which shows explicitly that the magnetic length is effectively longer for quasiparticles than for electrons is proposed. This wavefunction is used to estimate the dispersion relation of these excitons and the matrix elements to generate them optically out of the ground state. These quantities are then used to describe a type of nonlinear conductivity which may occur in these systems when they are relatively clean.

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

NASA Astrophysics Data System (ADS)

Xie, Ting; Dreyer, Michael; Bowen, David; Hinkel, Dan; Butera, R. E.; Krafft, Charles; Mayergoyz, Isaak

2018-05-01

Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

Electronic Phenomena in Two-Dimensional Topological Insulators

NASA Astrophysics Data System (ADS)

Hart, Sean

In recent years, two-dimensional electron systems have played an integral role at the forefront of discoveries in condensed matter physics. These include the integer and fractional quantum Hall effects, massless electron physics in graphene, the quantum spin and quantum anomalous Hall effects, and many more. Investigation of these fascinating states of matter brings with it surprising new results, challenges us to understand new physical phenomena, and pushes us toward new technological capabilities. In this thesis, we describe a set of experiments aimed at elucidating the behavior of two such two-dimensional systems: the quantum Hall effect, and the quantum spin Hall effect. The first experiment examines electronic behavior at the edge of a two-dimensional electron system formed in a GaAs/AlGaAs heterostructure, under the application of a strong perpendicular magnetic field. When the ratio between the number of electrons and flux quanta in the system is tuned near certain integer or fractional values, the electrons in the system can form states which are respectively known as the integer and fractional quantum Hall effects. These states are insulators in the bulk, but carry gapless excitations at the edge. Remarkably, in certain fractional quantum Hall states, it was predicted that even as charge is carried downstream along an edge, heat can be carried upstream in a neutral edge channel. By placing quantum dots along a quantum Hall edge, we are able to locally monitor the edge temperature. Using a quantum point contact, we can locally heat the edge and use the quantum dot thermometers to detect heat carried both downstream and upstream. We find that heat can be carried upstream when the edge contains structure related to the nu = 2/3 fractional quantum Hall state. We further find that this fractional edge physics can even be present when the bulk is tuned to the nu = 1integer quantum Hall state. Our experiments also demonstrate that the nature of this fractional reconstruction can be tuned by modifying the sharpness of the confining potential at the edge. In the second set of experiments, we focus on an exciting new two-dimensional system known as a quantum spin Hall insulator. Realized in quantum well heterostructures formed by layers of HgTe and HgCdTe, this material belongs to a set of recently discovered topological insulators. Like the quantum Hall effect, the quantum spin Hall effect is characterized by an insulating bulk and conducting edge states. However, the quantum spin Hall effect occurs in the absence of an external magnetic field, and contains a pair of counter propagating edge states which are the time-reversed partners of one another. It was recently predicted that a Josephson junction based around one of these edge states could host a new variety of excitation called a Majorana fermion. Majorana fermions are predicted to have non-Abelian braiding statistics, a property which holds promise as a robust basis for quantum information processing. In our experiments, we place a section of quantum spin Hall insulator between two superconducting leads, to form a Josephson junction. By measuring Fraunhofer interference, we are able to study the spatial distribution of supercurrent in the junction. In the quantum spin Hall regime, this supercurrent becomes confined to the topological edge states. In addition to providing a microscopic picture of these states, our measurement scheme generally provides a way to investigate the edge structure of any topological insulator. In further experiments, we tune the chemical potential into the conduction band of the HgTe system, and investigate the behavior of Fraunhofer interference as a magnetic field is applied parallel to the plane of the quantum well. By theoretically analyzing the interference in a parallel field, we find that Cooper pairs in the material acquire a tunable momentum that grows with the magnetic field strength. This finite pairing momentum leads to the appearance of triplet pair correlations at certain locations within the junction, which we are able to control with the external magnetic field. Our measurements and analysis also provide a method to obtain information about the Fermi surface properties and spin-orbit coupling in two-dimensional materials.

Interpretation of transport measurements in ZnO-thin films

NASA Astrophysics Data System (ADS)

Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas

2011-01-01

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

Theoretical study of spin Hall effect in conjugated Organic semiconductors

NASA Astrophysics Data System (ADS)

Mahani, M. R.; Delin, A.

The spin Hall effect (SHE), a direct conversion between electronic and spin currents, is a rapidly growing branch of spintronics. The study of SHE in conjugated polymers has gained momentum recently due to the weak spin-orbit couplings and hyperfine interactions in these materials. Our calculations of SHE based on the recent work, are the result of the misalignment of pi-orbitals in triads consisting of three molecules. In disordered organics, where the electronic conduction is through hopping of the electrons among randomly oriented molecules, instead of identifying a hopping triad to represent the entire system, we numerically solve the master equations for electrical and spin hall conductivities by summing the contributions from all triads in a sufficiently large system. The interference between the direct and indirect hoppings in these triads leads to SHE proportional to the orientation vector of molecule at the first order of spin-orbit coupling. Hence, our results show, the degree of molecular alignment as well as the strength of the spin-orbit coupling can be used to control the SHE in organics.

Phase transition and field effect topological quantum transistor made of monolayer MoS2

NASA Astrophysics Data System (ADS)

Simchi, H.; Simchi, M.; Fardmanesh, M.; Peeters, F. M.

2018-06-01

We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q 2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q 2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q 2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.

Topological aspect and the pairing symmetries on spin-triplet chiral p-wave superconductor under strain

NASA Astrophysics Data System (ADS)

Imai, Yoshiki; Sigrist, Manfred

2018-05-01

Motivated by recent experiments on Sr2RuO4, the effect of uniaxial strain on the chiral p-wave superconductor is discussed. We study particularly the relation between the topological indices and different pairing states in the superconducting phase through the thermal Hall conductivity, which is proportional to temperature and the Chern number in the very low-temperature limit. We show that the temperature-dependence of the thermal Hall conductivity under uniaxial strain depends strongly on the form of the pairing state. The obtained result may provide a possible experimental probe for the pairing structure in Sr2RuO4.

Transport, Optical, and Magnetic Properties of the Conducting Halide Perovskite CH 3NH 3SnI 3

NASA Astrophysics Data System (ADS)

Mitzi, D. B.; Feild, C. A.; Schlesinger, Z.; Laibowitz, R. B.

1995-01-01

A low-temperature ( T ≤ 100°C) solution technique is described for the preparation of polycrystalline and single crystal samples of the conducting halide perovskite, CH 3NH 3SnI 3. Transport, Hall effect, magnetic, and optical properties are examined over the temperature range 1.8-300 K, confirming that this unusual conducting halide perovskite is a low carrier density p-type metal with a Hall hole density, 1/ RHe ≃ 2 × 10 19 cm -3. The resistivity of pressed pellet samples decreases with decreasing temperature with resistivity ratio ρ(300 K)/ρ(2 K) ≃ 3 and room temperature resistivity ρ(300 K) ≃ 7 mΩ-cm. A free-carrier infrared reflectivity spectrum with a plasma edge observed at approximately 1600 cm -1 further attests to the metallic nature of this compound and suggests a small optical effective mass, m* ≃ 0.2.

Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2017-11-01

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

NASA's 2004 Hall Thruster Program

NASA Technical Reports Server (NTRS)

Jacobson, David T.; Manzella, David H.; Hofer, Richard R.; Peterson, Peter Y.

2004-01-01

An overview of NASA's Hall thruster research and development tasks conducted during fiscal year 2004 is presented. These tasks focus on: raising the technology readiness level of high power Hall thrusters, developing a moderate-power/ moderate specific impulse Hall thruster, demonstrating high-power/high specific impulse Hall thruster operation, and addressing the fundamental technical challenges of emerging Hall thruster concepts. Programmatic background information, technical accomplishments and out year plans for each program element performed under the sponsorship of the In-Space Transportation Program, Project Prometheus, and the Energetics Project are provided.

Mixed-state Hall effect of high-T(c) superconductors

NASA Astrophysics Data System (ADS)

Kang, Byeongwon

In this dissertation, we presented the study on the mixed-state Hall effect of high-Tc superconductors (HTSs). In order to understand the mechanisms of the puzzling phenomena in the mixed-state Hall effect of HTSs, the Hall sign anomaly and scaling behavior, Hall measurements are conducted in several HTS thin films. We investigate the mechanism of the sign reversal of the Hall resistivity in Tl-2201 films when the electronic band structure is varied through the underdoped, optimally doped, and overdoped regions. It is found that the Hall sign reversals are an intrinsic property of HTSs and determined by electronic band structure. Although pinning is not found to be the mechanism behind sign reversals, pinning can suppress the appearance of the Hall sign reversal. Therefore, it is concluded that two (or more) sign reversals are a generic behavior of HTSs. From a systematic study of the vortex phase diagram, we discover several new features of the vortex liquid. In the presence of pinning, the vortex-liquid phase can be divided into two regions, a glassy liquid (GL) where vortices remain correlated as manifested in non-Ohmic resistivity, and a regular liquid (RL) where resistivity becomes Ohmic as vortices become uncorrelated. The field dependence of the Hall angle is found to be linear in the RL and nonlinear in the GL. Generally the decoupling line (Hk- T), which is defined as a boundary between the GL and the RL, is lower than the depinning line (Hd-T). As pinning increases the Hk-T may approach the Hd-T, thus vortices are decoupled and depinned nearly simultaneously. For a weak pinning system, on the other hand, the Hk-T and the Hd-T are well separated so that single vortices remain pinned in the region Hk ≤ H ≥ Hd. The behavior of s xy is also investigated in the GL and the RL. In the GL s xy is observed to strongly depend on pinning due to the inter-vortex correlation whereas in the RL s xy is independent of pinning since the pinning effect is scaled out.

Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

2018-03-01

Anatase TiO2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO2 and LaAlO3 (001), which arises for LaO-terminated LaAlO3, while the AlO2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm2 (V s)-1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ˜4 V.

Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Pan, W.; Klem, J. F.; Kim, J. K.; Thalakulam, M.; Cich, M. J.; Lyo, S. K.

2013-03-01

We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e2 / h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Electron transport shows noisy behavior around the CNP at extremely high B fields. When the diagonal conductivity σxx is plotted against the Hall conductivity σxy, a conductivity circle law is discovered, suggesting a chaotic quantum transport behavior. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

The Enhancement of spin Hall torque efficiency and Reduction of Gilbert damping in spin Hall metal/normal metal/ferromagnetic trilayers

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Pai, Chi-Feng; Ralph, Daniel C.; Buhrman, Robert A.

2015-03-01

The spin Hall effect (SHE) in ferromagnet/heavy metal bilayer structures has been demonstrated to be a powerful means for producing pure spin currents and for exerting spin-orbit damping-like and field-like torques on the ferromagnetic layer. Large spin Hall (SH) angles have been reported for Pt, beta-Ta and beta-W films and have been utilized to achieve magnetic switching of in-plane and out-of-plane magnetized nanomagnets, spin torque auto-oscillators, and the control of high velocity domain wall motion. For many of the proposed applications of the SHE it is also important to achieve an effective Gilbert damping parameter that is as low as possible. In general the spin orbit torques and the effective damping are predicted to depend directly on the spin-mixing conductance of the SH metal/ferromagnet interface. This opens up the possibility of tuning these properties with the insertion of a very thin layer of another metal between the SH metal and the ferromagnet. Here we will report on experiments with such trilayer structures in which we have observed both a large enhancement of the spin Hall torque efficiency and a significant reduction in the effective Gilbert damping. Our results indicate that there is considerable opportunity to optimize the effectiveness and energy efficiency of the damping-like torque through engineering of such trilayer structures. Supported in part by NSF and Samsung Electronics Corporation.

Characterization of conductive Al-doped ZnO thin films for plasmonic applications

NASA Astrophysics Data System (ADS)

Masouleh, F. F.; Sinno, I.; Buckley, R. G.; Gouws, G.; Moore, C. P.

2018-02-01

Highly conductive and transparent Al-doped zinc oxide films were produced by RF magnetron sputtering for plasmonic applications in the infrared region of the spectrum. These films were characterized using Fourier transform infrared spectroscopy, the Hall effect, Rutherford backscattering spectroscopy and spectral data analysis. Analysis of the results shows a carrier concentration of up to 2.6 × 1020 cm-3, as well as transmission over 80% near the plasma frequency where plasmonic properties are expected. The plasma frequency was calculated from the spectroscopy measurements and subsequent data analysis, and was in agreement with the results from the Hall effect measurements and the free electron gas (Drude) model. Based on these results, the Al-doped zinc oxide thin films are well-suited for plasmonic applications in the infrared region.

Intrinsic quantum anomalous hall effect in a two-dimensional anilato-based lattice.

PubMed

Ni, Xiaojuan; Jiang, Wei; Huang, Huaqing; Jin, Kyung-Hwan; Liu, Feng

2018-06-13

Using first-principles calculations, we predict an intrinsic quantum anomalous Hall (QAH) state in a monolayer anilato-based metal-organic framework M2(C6O4X2)3 (M = Mn and Tc, X = F, Cl, Br and I). The spin-orbit coupling of M d orbitals opens a nontrivial band gap up to 18 meV at the Dirac point. The electron counting rule is used to explain the intrinsic nature of the QAH state. The calculated nonzero Chern number, gapless edge states and quantized Hall conductance all confirm the nontrivial topological properties in the anilato-based lattice. Our findings provide an organic materials platform for the realization of the QAH effect without the need for magnetic and charge doping, which are highly desirable for the development of low-energy-consumption spintronic devices.

Unusual Thermal Hall Effect in a Kitaev Spin Liquid Candidate α -RuCl3

NASA Astrophysics Data System (ADS)

Kasahara, Y.; Sugii, K.; Ohnishi, T.; Shimozawa, M.; Yamashita, M.; Kurita, N.; Tanaka, H.; Nasu, J.; Motome, Y.; Shibauchi, T.; Matsuda, Y.

2018-05-01

The Kitaev quantum spin liquid displays the fractionalization of quantum spins into Majorana fermions. The emergent Majorana edge current is predicted to manifest itself in the form of a finite thermal Hall effect, a feature commonly discussed in topological superconductors. Here we report on thermal Hall conductivity κx y measurements in α -RuCl3 , a candidate Kitaev magnet with the two-dimensional honeycomb lattice. In a spin-liquid (Kitaev paramagnetic) state below the temperature characterized by the Kitaev interaction JK/kB˜80 K , positive κx y develops gradually upon cooling, demonstrating the presence of highly unusual itinerant excitations. Although the zero-temperature property is masked by the magnetic ordering at TN=7 K , the sign, magnitude, and T dependence of κx y/T at intermediate temperatures follows the predicted trend of the itinerant Majorana excitations.

Hidden-Symmetry-Protected Topological Semimetals on a Square Lattice

NASA Astrophysics Data System (ADS)

Hou, Jing-Min

2014-03-01

We study a two-dimensional fermionic square lattice, which supports the existence of two-dimensional Weyl semimetal, quantum anomalous Hall effect, and 2 π -flux topological semimetal in different parameter ranges. We show that the band degenerate points of the two-dimensional Weyl semimetal and 2 π -flux topological semimetal are protected by two distinct novel hidden symmetries, which both corresponds to antiunitary composite operations. When these hidden symmetries are broken, a gap opens between the conduction and valence bands, turning the system into a insulator. With appropriate parameters, a quantum anomalous Hall effect emerges. The degenerate point at the boundary between the quantum anomalous Hall insulator and trivial band insulator is also protected by the hidden symmetry. [PRL 111, 130403(2013)] This work was supported by the National Natural Science Foundation of China under Grants No. 11004028 and No. 11274061.

Large thermal Hall effect in a frustrated pyrochlore magnet

NASA Astrophysics Data System (ADS)

Hirschberger, Max; Krizan, Jason; Cava, Robert J.; Ong, N. Phuan

2015-03-01

In frustrated magnetism, the nature of the ground state and its elementary excitations are a matter of considerable debate. We present a detailed study of the full thermal conductivity tensor κij, including the Righi-Leduc (or thermal Hall) effect, in single crystals of the frustrated quantum spin-ice pyrochlore Tb2Ti2O7. The off-diagonal response κxy / T is large in this insulating material, despite the absence of itinerant electrons experiencing the Lorentz force. Our experiments over the temperature range of 0 . 8 - 200 K and in fields up to 14 T reveal a remarkable phenomenology: A sizeable field-linear Hall effect κxy / T is observed below 100 K, and its slope with respect to magnetic field increases strongly as we cool the sample. We observe significant curvature in the field dependence of κxy / T below 15 K. At the lowest temperatures, both κxx / T and the initial slope limB-->0 [κxy / TB ] are constant in temperature, behavior reminiscent of fermionic heat conduction in dirty metals. Experimental methods and verification of the intrinsic nature of the effect will be discussed. R.J.C. and N.P.O. are supported by a MURI Grant (ARO W911NF-12-1-0461) and by the US National Science Foundation (Grant Number DMR 0819860).

Charge carrier coherence and Hall effect in organic semiconductors.

PubMed

Yi, H T; Gartstein, Y N; Podzorov, V

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

Resonant spin Hall effect in two dimensional electron gas

NASA Astrophysics Data System (ADS)

Shen, Shun-Qing

2005-03-01

Remarkable phenomena have been observed in 2DEG over last two decades, most notably, the discovery of integer and fractional quantum Hall effect. The study of spin transport provides a good opportunity to explore spin physics in two-dimensional electron gas (2DEG) with spin-orbit coupling and other interaction. It is already known that the spin-orbit coupling leads to a zero-field spin splitting, and competes with the Zeeman spin splitting if the system is subjected to a magnetic field perpendicular to the plane of 2DEG. The result can be detected as beating of the Shubnikov-de Haas oscillation. Very recently the speaker and his collaborators studied transport properties of a two-dimensional electron system with Rashba spin-orbit coupling in a perpendicular magnetic field. The spin-orbit coupling competes with the Zeeman splitting to generate additional degeneracies between different Landau levels at certain magnetic fields. It is predicted theoretically that this degeneracy, if occurring at the Fermi level, gives rise to a resonant spin Hall conductance, whose height is divergent as 1/T and whose weight is divergent as -lnT at low temperatures. The charge Hall conductance changes by 2e^2/h instead of e^2/h as the magnetic field changes through the resonant point. The speaker will address the resonance condition, symmetries in the spin-orbit coupling, the singularity of magnetic susceptibility, nonlinear electric field effect, the edge effect and the disorder effect due to impurities. This work was supported by the Research Grants Council of Hong Kong under Grant No.: HKU 7088/01P. *S. Q. Shen, M. Ma, X. C. Xie, and F. C. Zhang, Phys. Rev. Lett. 92, 256603 (2004) *S. Q. Shen, Y. J. Bao, M. Ma, X. C. Xie, and F. C. Zhang, cond-mat/0410169

Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

NASA Astrophysics Data System (ADS)

Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

2018-05-01

Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

Hall Thruster Thermal Modeling and Test Data Correlation

NASA Technical Reports Server (NTRS)

Myers, James; Kamhawi, Hani; Yim, John; Clayman, Lauren

2016-01-01

The life of Hall Effect thrusters are primarily limited by plasma erosion and thermal related failures. NASA Glenn Research Center (GRC) in cooperation with the Jet Propulsion Laboratory (JPL) have recently completed development of a Hall thruster with specific emphasis to mitigate these limitations. Extending the operational life of Hall thursters makes them more suitable for some of NASA's longer duration interplanetary missions. This paper documents the thermal model development, refinement and correlation of results with thruster test data. Correlation was achieved by minimizing uncertainties in model input and recognizing the relevant parameters for effective model tuning. Throughout the thruster design phase the model was used to evaluate design options and systematically reduce component temperatures. Hall thrusters are inherently complex assemblies of high temperature components relying on internal conduction and external radiation for heat dispersion and rejection. System solutions are necessary in most cases to fully assess the benefits and/or consequences of any potential design change. Thermal model correlation is critical since thruster operational parameters can push some components/materials beyond their temperature limits. This thruster incorporates a state-of-the-art magnetic shielding system to reduce plasma erosion and to a lesser extend power/heat deposition. Additionally a comprehensive thermal design strategy was employed to reduce temperatures of critical thruster components (primarily the magnet coils and the discharge channel). Long term wear testing is currently underway to assess the effectiveness of these systems and consequently thruster longevity.

Optical Boron Nitride Insulator Erosion Characterization of a 200 W Xenon Hall Thruster

DTIC Science & Technology

2005-05-01

Hall thruster boron nitride insulator is evaluated as a diagnostic for real-time evaluation of thruster insulator erosion. Three Hall thruster plasma control variables are examined: ion energy (discharge potential), ion flux (propellant flow), and plasma conductivity (magnetic field strength). The boron emission, and hence the insulator erosion rate, varies linearly with ion energy and ion flux. A minimum erosion rate appears at intermediate magnetic field strengths. This may indicate that local plasma conductivity significantly affects the divergence

Emergent Topological Phenomena in Thin Films of Pyrochlore Iridates

NASA Astrophysics Data System (ADS)

Yang, Bohm-Jung; Nagaosa, Naoto

2014-06-01

Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

Safety halls--an evaluation.

PubMed

Nyberg, Anders; Gregersen, Nils Petter; Nolén, Sixten; Engström, Inger

2005-01-01

In most countries, drivers licensing systems usually include teaching some aspects of using safety equipment (e.g., airbags and seat belts). However, there is now evidence worldwide that such education is inadequate, as indicated by, for example, the overrepresentation of young drivers who do not use seat belts. A randomized controlled study was conducted in Sweden to evaluate the effects of visiting a facility known as a "safety hall" in combination with the mandatory skid training. The results were assessed to determine the effects of the knowledge and attitudes of learner drivers in the following subjects: airbags, securing loads, seat belts, sitting posture, speed, and tires. An experimental group and a control group comprising 658 and 668 learners, respectively, answered identical questionnaires on three different occasions (pretest, posttest 1, and posttest 2). The results show that, for most of the topics considered, knowledge and attitudes in both groups were better at posttest 2 than at the pretest, and in general, the best knowledge and attitudes were found in the experimental group. The combined safety/skid training seems to have had the greatest effect on seat belts and loads. The findings also indicate that the safety halls can be further improved to achieve an even better effect. The use of safety halls has improved the knowledge and attitudes of learner drivers concerning several important areas related to traffic safety. Since knowledge and attitudes are important predictors of behavior, implementing safety halls can be expected to lead to improvements, especially regarding the use of safety belts and securing loads.

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seed layer

NASA Astrophysics Data System (ADS)

Hu, Fang; Xu, Guizhou; You, Yurong; Zhang, Zhi; Xu, Zhan; Gong, Yuanyuan; Liu, Er; Zhang, Hongguo; Liu, Enke; Wang, Wenhong; Xu, Feng

2018-03-01

Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in antiferromagnetic spintronic devices. Herein, we report the preparation of Mn3Ga films in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on a thermally oxidized Si substrate. Large coercivity together with large anomalous Hall resistivity is found in the Ta-only sample with a mixed tetragonal phase. By increasing the thickness of the Ru layer, the tetragonal phase gradually disappears and a relatively pure hexagonal phase is obtained in the Ta(5)/Ru(30) buffered sample. Further magnetic and transport measurements revealed that the anomalous Hall conductivity nearly vanishes in the pure hexagonal sample, while an abnormal asymmetric hump structure emerges in the low field region. The extracted additional Hall term is robust in a large temperature range and presents a sign reversal above 200 K. The abnormal Hall properties are proposed to be closely related to the frustrated spin structure of D019 Mn3Ga.

Carrier coherence and high-resolution Hall effect measurements in organic semiconductors.

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly

Charge conduction in organic semiconductors frequently occurs in a regime at the borderline between a band-like coherent motion of delocalazied carriers in extended states and an incoherent hopping through localized states. Many intrinsic factors are competing for defining the dominant transport mechanism, including the strength of intermolecular interactions represented by the transfer integrals, carrier self-localization due to formation of polarons, electron-phonon coupling, scattering and off-diagonal thermal disorder (see, e.g.,). Depending on the interplay between these processes, either band-like or hopping charge transport realizes. Besides these intrinsic factors, a significant role in practical devices is played by the static disorder (chemical impurities and structural defects) that leads to carrier trapping at various energies and time scales. In most of these cases, the charge carrier mobility in OFETs is rather small (0.1 - 20 cm2V-1s-1)),and in order to carefully and accurately characterize it,Hall effect measurements are necessary. Conventional Hall measurements are extremely challenging in systems with such low mobilities. Here,we present a novel Hall measurement technique that can be carried out in low magnetic fields with an amazing sensitivity,much greater than that attained in conventional Hall measurements. We apply this method to mobility measurements in a variety of OFETs with mobility as low as 0.3 cm2V-1s-1 and reveal various peculiarities of Hall effect in low-mobility systems. By taking advantage of this powerful new experimental capability, we have understood several ``mysteries'' of Hall effect observed by various groups in OFETs over the last decade. The work was financially supported by NSF DMR-1506609, and Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (No. K3-2016-004), decree dated 16th of March 2013, N 211.

Charge carrier coherence and Hall effect in organic semiconductors

DOE PAGES

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

Charge carrier coherence and Hall effect in organic semiconductors

PubMed Central

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-01-01

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

Linear response and Berry curvature in two-dimensional topological phases

NASA Astrophysics Data System (ADS)

Bradlyn, Barry J.

In this thesis we examine the viscous and thermal transport properties of chiral topological phases, and their relationship to topological invariants. We start by developing a Kubo formalism for calculating the frequency dependent viscosity tensor of a general quantum system, both with and without a uniform external magnetic field. The importance of contact terms is emphasized. We apply this formalism to the study of integer and fractional quantum Hall states, as well as p + ip paired superfluids, and verify the relationship between the Hall viscosity and the mean orbital spin density. We also elucidate the connection between our Kubo formulas and prior adiabatic transport calculations of the Hall viscosity. Additionally, we derive a general relationship between the frequency dependent viscosity and conductivity tensors for Galilean-invariant systems. We comment on the implications of this relationship towards the measurement of Hall viscosity in solid-state systems. To address the question of thermal transport, we first review the standard Kubo formalism of Luttinger for computing thermoelectric coefficients. We apply this to the specific case of non-interacting electrons in the integer quantum Hall regime, paying careful attention to the roles of bulk and edge effects. In order to generalize our discussion to interacting systems, we construct a low-energy effective action for a two-dimensional non-relativistic topological phase of matter in a continuum, which completely describes all of its bulk thermoelectric and visco-elastic properties in the limit of low frequencies, long distances, and zero temperature, without assuming either Lorentz or Galilean invariance, by coupling the microscopic degrees of freedom to the background spacetime geometry. We derive the most general form of a local bulk induced action to first order in derivatives of the background fields, from which thermodynamic and transport properties can be obtained. We show that the gapped bulk cannot contribute to low-temperature thermoelectric transport other than the ordinary Hall conductivity; the other thermoelectric effects (if they occur) are thus purely edge effects. The stress response to time-dependent strains is given by the Hall viscosity, which is robust against perturbations and related to the spin current. Finally, we address the issue of calculating the topological central charge from bulk wavefunctions for a topological phase. Using the form of the topological terms in the induced action, we show that we can calculate the various coefficients of these terms as Berry curvatures associated to certain metric and electromagnetic vector potential perturbations. We carry out this computation explicitly for quantum Hall trial wavefunctions that can be represented as conformal blocks in a chiral conformal field theory (CFT). These calculations make use of the gauge and gravitational anomalies in the underlying chiral CFT.

Topological Hall Effect from Strong to Weak Coupling

NASA Astrophysics Data System (ADS)

Nakazawa, Kazuki; Bibes, Manuel; Kohno, Hiroshi

2018-03-01

The topological Hall effect (THE) of electrons coupled to a noncoplanar spin texture has been studied so far for the strong- and weak-coupling regimes separately; the former in terms of the Berry phase and the latter by perturbation theory. In this letter, we present a unified treatment in terms of spin gauge field by considering not only the adiabatic (Berry phase) component of the gauge field but also the nonadiabatic component. While only the adiabatic contribution is important in the strong-coupling regime, it is completely canceled by a part of the nonadiabatic contribution in the weak-coupling regime, where the THE is governed by the remaining nonadiabatic terms. We found a new weak-coupling region that cannot be accessed by a simple perturbation theory, where the Hall conductivity is proportional to M, with 2M being the exchange splitting of the electron spectrum.

MHD heat flux mitigation in hypersonic flow around a blunt body with ablating surface

NASA Astrophysics Data System (ADS)

Bityurin, V. A.; Bocharov, A. N.

2018-07-01

One of the possible applications of magnetohydrodynamic flow control is considered. Namely, the surface heat flux mitigation by means of magnetohydrodynamic (MHD) interaction in hypersonic flow around a blunt body. The 2D computational model realizes a coupled solution of chemically non-equilibrium ionized airflow in magnetic field. Heat- and mass-transfer due to the ablation of materials from the body surface is taken into account. Two cases of free-stream flow conditions are considered: moderate free-stream velocity (7500 m s‑1) case and high free-stream velocity (11 000 m s‑1) case. It is shown that the first flow case results in moderate ionization in the shock layer, while the second flow case results in high ionization. In the first case, the Hall effect is significant, and effective electrical conductivity in the shock layer is rather low. In the second case, the Hall effect reduces, and effective conductivity is high. Even if the Hall effect is strong, as in the first case, intensive MHD deceleration of the flow behind the shock is provided due to the presence of insulating boundaries, the bow shock front and non-conductive wall of the blunt body. In the second case, high effective conductivity provides a high intensity of MHD flow deceleration. In both cases, a strong effect of MHD interaction on the flow structure is observed. As a consequence, a noticeable reduction of the surface heat flux is revealed for reasonable values of magnetic induction. The new treatment of mechanism for the surface heat flux reduction is proposed, which is different from commonly used one assuming that MHD interaction increases the bow shock stand-off distance, and, consequently results in a decrease of the mean temperature drop across the shock layer. The new effect of ‘saturation of heat flux’ is discussed.

Influence of Hall Effect on Magnetic Control of Stagnation Point Heat Transfer

NASA Astrophysics Data System (ADS)

Poggie, Jonathan; Gaitonde, Datta

2001-11-01

Electromagnetic control is an appealing possibility for mitigating the thermal loads that occur in hypersonic flight. There was extensive research on this technique in the past (up to about 1970), but enthusiasm waned because of problems of system cost and weight. Renewed interest has arisen recently due to developments in the technology of super-conducting magnets and the understanding of the physics of weakly-ionized, non-equilibrium plasmas. A problem of particular interest is the reduction of stagnation point heating during atmospheric entry by magnetic deceleration of the flow in the shock layer. For the case of hypersonic flow over a sphere, a reduction in heat flux has been observed with the application of a dipole magnetic field (Poggie and Gaitonde, AIAA Paper 2001-0196). The Hall effect has a detrimental influence on this control scheme, tending to rotate the current vector out of the circumferential direction and to reduce the impact of the applied magnetic field on the fluid. In the present work we re-examine this problem by using modern computational methods to simulate flow past a hemispherical-nosed vehicle in which a axially-oriented magnetic dipole has been placed. The deleterious effects of the Hall current are characterized, and are observed to diminish when the surface of the vehicle is conducting.

ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitkalov, Sergey A.; Bowers, C. Russell; Simmons, Jerry A.

2000-02-15

This paper presents a study of the enhancement of the Zeeman energy of two-dimensional (2D) conduction electrons near the {nu}=1 filling factor of the quantum Hall effect by optical dynamic nuclear polarization. The change in the Zeeman energy is determined from the Overhauser shift of the transport detected electron spin resonance in GaAs/Al{sub x}Ga{sub 1-x}As multiquantum wells. In a separate experiment the NMR signal enhancement factor is obtained by radio frequency detected nuclear magnetic resonance under similar conditions in the same sample. These measurements afford an estimation of the hyperfine coupling constant between the nuclei and 2D conduction electrons. (c)more » 2000 The American Physical Society.« less

Magnetic circuit for hall effect plasma accelerator

NASA Technical Reports Server (NTRS)

Manzella, David H. (Inventor); Jacobson, David T. (Inventor); Hofer, Richard (Inventor); Peterson, Peter (Inventor); Jankovsky, Robert S. (Inventor)

2009-01-01

A Hall effect plasma accelerator includes inner and outer electromagnets, circumferentially surrounding the inner electromagnet along a thruster centerline axis and separated therefrom, inner and outer magnetic conductors, in physical connection with their respective inner and outer electromagnets, with the inner magnetic conductor having a mostly circular shape and the outer magnetic conductor having a mostly annular shape, a discharge chamber, located between the inner and outer magnetic conductors, a magnetically conducting back plate, in magnetic contact with the inner and outer magnetic conductors, and a combined anode electrode/gaseous propellant distributor, located at a bottom portion of the discharge chamber. The inner and outer electromagnets, the inner and outer magnetic conductors and the magnetically conducting back plate form a magnetic circuit that produces a magnetic field that is largely axial and radially symmetric with respect to the thruster centerline.

Effect of Segmented Electrode Length on the Performances of an Aton-Type Hall Thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Bian, Xingyu; Cao, Anning; Liu, Guangrui; Chen, Long; Yin, Yan

2016-05-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of a Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on the potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of the segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, the radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of the ionization rate in the discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected. supported by National Natural Science Foundation of China (Nos. 11375039 and 11275034) and the Key Project of Science and Technology of Liaoning Province, China (No. 2011224007) and the Fundamental Research Funds for the Central Universities, China (No. 3132014328)

Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

PubMed Central

Maryenko, D.; Mishchenko, A. S.; Bahramy, M. S.; Ernst, A.; Falson, J.; Kozuka, Y.; Tsukazaki, A.; Nagaosa, N.; Kawasaki, M.

2017-01-01

Anomalous Hall effect, a manifestation of Hall effect occurring in systems without time-reversal symmetry, has been mostly observed in ferromagnetically ordered materials. However, its realization in high-mobility two-dimensional electron system remains elusive, as the incorporation of magnetic moments deteriorates the device performance compared to non-doped structure. Here we observe systematic emergence of anomalous Hall effect in various MgZnO/ZnO heterostructures that exhibit quantum Hall effect. At low temperatures, our nominally non-magnetic heterostructures display an anomalous Hall effect response similar to that of a clean ferromagnetic metal, while keeping a large anomalous Hall effect angle θAHE≈20°. Such a behaviour is consistent with Giovannini–Kondo model in which the anomalous Hall effect arises from the skew scattering of electrons by localized paramagnetic centres. Our study unveils a new aspect of many-body interactions in two-dimensional electron systems and shows how the anomalous Hall effect can emerge in a non-magnetic system. PMID:28300133

Terahertz response in the quantum-Hall-effect regime of a quantum-well-based charge-sensitive infrared phototransistor

NASA Astrophysics Data System (ADS)

Nakagawa, Daisuke; Takizawa, Kazuhiro; Ikushima, Kenji; Kim, Sunmi; Patrashin, Mikhail; Hosako, Iwao; Komiyama, Susumu

2018-04-01

The characteristics of a charge-sensitive infrared phototransistor (CSIP) based on a GaAs/AlGaAs multiple quantum-well (QW) structure are studied under a magnetic field. In the CSIP, the upper QWs serve as a floating gate that is charged by photoexcitation. The photoinduced charges are detected using the resistance of the lowest QW conducting channel. The conducting channel exhibits the integer quantum Hall effect (QHE) in a perpendicular high magnetic field, yielding the magnetic field dependence of the terahertz (THz) response ΔR. We found two different features of ΔR. One is that ΔR switches sign across the QHE plateau, which is explained simply by an increased electron density in the conducting channel. The other feature is observed as an enhanced positive ΔR when a potential barrier is formed in the conducting channel. The latter mechanism can be interpreted as the promotion of edge/bulk scattering due to photoinduced charges. These findings suggest ways to enhance the THz response by using magnetic fields and potential barriers.

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE PAGES

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; ...

2018-03-26

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Annealing of Heavily Boron-Doped Silicon: Effect on Electrical and Thermoelectric Properties.

PubMed

Zulian, Laura; Segrado, Francesco; Narducci, Dario

2017-03-01

In previous studies it was shown that heavily boron-doped nanocrystalline silicon submitted to thermal treatments at temperatures ≥800 °C is characterized by an anomalously high thermoelectric power factor. Its enhanced performances were ascribed to the formation of SiBx precipitates at grain boundary, leading to the formation of potential barriers that filter out low-energy carriers, then causing a simultaneous enhancement of the Seebeck coefficient and of the electrical conductivity. To further investigate the effect of thermal treatment on boron-doped nanocrystalline silicon, samples were submitted to a host of annealing processes or of sequences of them at temperatures between 900 and 1000 °C and for various amounts of time. Electrical conductivity and Hall effect measurements were carried out after each thermal treatment over the temperature range 20–300 K. They provided evidence of the formation of an impurity band, and of hopping conduction at very low temperatures. Hall resistivity data versus temperature provided therefore important insights in the electronic structure of the system, which will enable a more complete understanding of the factors ruling energy filtering in this class of materials.

Numerical Study of Current Driven Instabilities and Anomalous Electron Transport in Hall-effect Thrusters

NASA Astrophysics Data System (ADS)

Tran, Jonathan

Plasma turbulence and the resulting anomalous electron transport due to azimuthal current driven instabilities in Hall-effect thrusters is a promising candidate for developing predictive models for the observed anomalous transport. A theory for anomalous electron transport and current driven instabilities has been recently studied by [Lafluer et al., 2016a]. Due to the extreme cost of fully resolving the Debye length and plasma frequency, hybrid plasma simulations utilizing kinetic ions and quasi-steady state fluid electrons have long been the principle workhorse methodology for Hall-effect thruster modeling. Using a reduced dimension particle in cell simulation implemented in the Thermophysics Universal Research Framework developed by the Air Force Research Lab, we show collective electron-wave scattering due to large amplitude azimuthal fluctuations of the electric field and the plasma density. These high-frequency and short wavelength fluctuations can lead to an effective cross-field mobility many orders of magnitude larger than what is expected from classical electron-neutral momentum collisions in the low neutral density regime. We further adapt the previous study by [Lampe et al., 1971] and [Stringer, 1964] for related current driven instabilities to electric propulsion relevant mass ratios and conditions. Finally, we conduct a preliminary study of resolving this instability with a modified hybrid simulation with the hope of integration with established hybrid Hall-effect thruster simulations.

Flux and Hall states in ABJM with dynamical flavors

NASA Astrophysics Data System (ADS)

Bea, Yago; Jokela, Niko; Lippert, Matthew; Ramallo, Alfonso V.; Zoakos, Dimitrios

2015-03-01

We study the physics of probe D6-branes with quantized internal worldvolume flux in the ABJM background with unquenched massless flavors. This flux breaks parity in the (2+1)-dimensional gauge theory and allows quantum Hall states. Parity breaking is also explicitly demonstrated via the helicity dependence of the meson spectrum. We obtain general expressions for the conductivities, both in the gapped Minkowski embeddings and in the compressible black hole ones. These conductivities depend on the flux and contain a contribution from the dynamical flavors which can be regarded as an effect of intrinsic disorder due to quantum fluctuations of the fundamentals. We present an explicit, analytic family of supersymmetric solutions with nonzero charge density, electric, and magnetic fields.

Design, Qualification and Lessons Learned of the Shutter Calibration Mechanism for EnMAP Mission

NASA Astrophysics Data System (ADS)

Schmidt, Tilo; Muller, Silvio; Bergander, Arvid; Zajac, Kai; Seifart, Klaus

2015-09-01

The Shutter Calibration Mechanism (SCM) Assembly is one of three mechanisms which are developed by HTS for the EnMAP instrument in subcontract to OHB System AG Munich. EnMAP is the Environmental Mapping and Analysis Program of the German Space Agency DLR.The binary rotary encoder of the SCM using hall-effect sensors was already presented during ESMATS 2011. This paper summarizes the main functions and design features of the Hardware and focuses on qualification testing which has finished successfully in 2014. Of particular interest is the functional testing of the main drive including the precise hall-effect position sensing system and the test of the fail safe mechanism. In addition to standard test campaign required for QM also a shock emission measurement of the fail safe mechanism activation was conducted.Test conduction and results will be presented with focus on deviations from the expected behaviour, mitigation measures and on lessons learned.

Splitting of the zero-energy Landau level and universal dissipative conductivity at critical points in disordered graphene.

PubMed

Ortmann, Frank; Roche, Stephan

2013-02-22

We report on robust features of the longitudinal conductivity (σ(xx)) of the graphene zero-energy Landau level in the presence of disorder and varying magnetic fields. By mixing an Anderson disorder potential with a low density of sublattice impurities, the transition from metallic to insulating states is theoretically explored as a function of Landau-level splitting, using highly efficient real-space methods to compute the Kubo conductivities (both σ(xx) and Hall σ(xy)). As long as valley degeneracy is maintained, the obtained critical conductivity σ(xx) =/~ 1.4e(2)/h is robust upon an increase in disorder (by almost 1 order of magnitude) and magnetic fields ranging from about 2 to 200 T. When the sublattice symmetry is broken, σ(xx) eventually vanishes at the Dirac point owing to localization effects, whereas the critical conductivities of pseudospin-split states (dictating the width of a σ(xy) = 0 plateau) change to σ(xx) =/~ e(2)/h, regardless of the splitting strength, superimposed disorder, or magnetic strength. These findings point towards the nondissipative nature of the quantum Hall effect in disordered graphene in the presence of Landau level splitting.

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

1995-01-01

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Quasi-one-dimensional Hall physics in the Harper–Hofstadter–Mott model

NASA Astrophysics Data System (ADS)

Kozarski, Filip; Hügel, Dario; Pollet, Lode

2018-04-01

We study the ground-state phase diagram of the strongly interacting Harper–Hofstadter–Mott model at quarter flux on a quasi-one-dimensional lattice consisting of a single magnetic flux quantum in y-direction. In addition to superfluid phases with various density patterns, the ground-state phase diagram features quasi-one-dimensional analogs of fractional quantum Hall phases at fillings ν = 1/2 and 3/2, where the latter is only found thanks to the hopping anisotropy and the quasi-one-dimensional geometry. At integer fillings—where in the full two-dimensional system the ground-state is expected to be gapless—we observe gapped non-degenerate ground-states: at ν = 1 it shows an odd ‘fermionic’ Hall conductance, while the Hall response at ν = 2 consists of the transverse transport of a single particle–hole pair, resulting in a net zero Hall conductance. The results are obtained by exact diagonalization and in the reciprocal mean-field approximation.

Magnetic modulation of inverse spin Hall effect in lateral spin-valves

NASA Astrophysics Data System (ADS)

Andrianov, T.; Vedyaev, A.; Dieny, B.

2018-05-01

We analytically investigated the spin-dependent transport properties in a lateral spin-valve device comprising pinned ferromagnetic electrodes allowing the injection of a spin current in a spin conducting channel where spin orbit scattering takes place. This produces an inverse spin Hall (ISHE) voltage across the thickness of the spin conducting channel. It is shown that by adding an extra soft ferromagnetic electrode with rotatable magnetization along the spin conducting channel, the ISHE generated voltage can be magnetically modulated by changing the magnetization orientation of this additional electrode. The dependence of the ISHE voltage on the direction of magnetization of the ferromagnetic electrode with rotatable magnetization was calculated in various configurations. Our results suggest that such structures could be considered as magnetic field sensors in situations where the total thickness of the sensor is constrained such as in hard disk drive readers.

Hall coefficient measurement for residual stress assessment in precipitation hardened IN718 nickel-base superalloy

NASA Astrophysics Data System (ADS)

Velicheti, Dheeraj; Nagy, Peter B.; Hassan, Waled

2017-02-01

We investigated the feasibility of residual stress assessment based on Hall coefficient measurements in precipitation hardened IN718 nickel-base superalloy. As a first step, we studied the influence of microstructural variations on the galvanomagnetic properties of IN718 nickel-base superalloy. We found that the Hall coefficient of IN718 increases from ≈ 8.0×10-11 m3/C in its fully annealed state of 15 HRC Rockwell hardness to ≈ 9.4×10-11 m3/C in its fully hardened state of 45 HRC. We also studied the influence of cold work, i.e., plastic deformation, at room temperature and found that cold work had negligible effect on the Hall coefficient of fully annealed IN718, but significantly reduced it in hardened states of the material. For example, measurements conducted on fully hardened IN718 specimens showed that the Hall coefficient decreased more or less linearly with cold work from its peak value of ≈ 9.4×10-11 m3/C in its intact state to ≈ 9.0×10-11 m3/C in its most deformed state of 22% plastic strain. We also studied the influence of applied stress and found that elastic strain significantly increases the Hall coefficient of IN718 regardless of the state of hardening. The relative sensitivity of the Hall coefficient to elastic strain was measured as a unitless gauge factor K that is defined as the ratio of the relative change of the Hall coefficient ΔRH/RH divided by the axial strain ɛ = σ/E, where σ is the applied uniaxial stress and E is the Young's modulus of the material. We determined that the galvanomagnetic gauge factor of IN718 is κ ≈ 2.6 - 2.9 depending on the hardness level. Besides the fairly high value of the gauge factor, it is important that it is positive, which means that compressive stress in surface-treated components decreases the Hall coefficient in a similar way as plastic deformation does, therefore the unfortunate cancellation that occurs in fully hardened IN718 in the case of electric conductivity measurements will not happen in this case. Additionally, the temperature dependence of the Hall coefficient was measured at three different hardness levels and the influence of thermal exposure was studied in fully hardened IN718 up to 700 °C.

AC conductivity of a quantum Hall line junction

NASA Astrophysics Data System (ADS)

Agarwal, Amit; Sen, Diptiman

2009-09-01

We present a microscopic model for calculating the AC conductivity of a finite length line junction made up of two counter- or co-propagating single mode quantum Hall edges with possibly different filling fractions. The effect of density-density interactions and a local tunneling conductance (σ) between the two edges is considered. Assuming that σ is independent of the frequency ω, we derive expressions for the AC conductivity as a function of ω, the length of the line junction and other parameters of the system. We reproduce the results of Sen and Agarwal (2008 Phys. Rev. B 78 085430) in the DC limit (\\omega \\to 0 ), and generalize those results for an interacting system. As a function of ω, the AC conductivity shows significant oscillations if σ is small; the oscillations become less prominent as σ increases. A renormalization group analysis shows that the system may be in a metallic or an insulating phase depending on the strength of the interactions. We discuss the experimental implications of this for the behavior of the AC conductivity at low temperatures.

Perfect Circular Dichroism in the Haldane Model

NASA Astrophysics Data System (ADS)

Ghalamkari, Kazu; Tatsumi, Yuki; Saito, Riichiro

2018-06-01

We theoretically show that perfect circular dichroism (CD) occurs in the Haldane model in which the two-dimensional (2D) material absorbs only either left-handed or right-handed circularly polarized light. Perfect CD occurs in the phase diagram of the Haldane model when the zero-field quantum Hall conductivity has a nonzero value. The coincidence of the occurrence of perfect CD and zero-field quantum Hall effect is attributed to the fact that the effect of broken time-reversal symmetry is larger than the effect of broken inversion symmetry. On the other hand, valley polarization and perfect CD occur exclusively in the phase diagram. Further, for the four regions of the phase diagram, pseudospin polarization occurs at the K and K' points in the hexagonal Brillouin zone with either the same sign or opposite sign for the K and K' points and for the valence and conduction bands. This theoretical prediction may have an impact on search for a new optical device that selects circularly polarized light controlled by the electric field.

Quantum Hall effect in dual gated BiSbTeSe2 topological insulator

NASA Astrophysics Data System (ADS)

Chong, Su Kong; Han, Kyu Bum; Nagaoka, Akira; Harmer, Jared; Tsuchikawa, Ryuichi; Sparks, Taylor D.; Deshpande, Vikram V.

The discovery of topological insulators (TIs) has expanded the family of Dirac materials and enables the probing of exotic matter such as Majorana fermions and magnetic monopoles. Different from conventional 2D electron gas, 3D TIs exhibit a gapped insulating bulk and gapless topological surface states as a result of the strong spin-orbit coupling. BiSbTeSe2 is also known to be a 3D TI with a large intrinsic bulk gap of about 0.3 eV and a single Dirac cone surface state. The highly bulk insulating BiSbTeSe2 permits surface dominated conduction, which is an ideal system for the study of quantum Hall effect (QHE). Due to the spin-momentum locking, the Dirac fermions at the topological surface states have a degeneracy of one. In the QH regime, the Hall conductance is quantized to (n + 1 / 2) e2 / h , where n is an integer and the factor of half is related to Berry curvature. In this work, we study the QHE 3D TI using a dual gated BiSbTeSe2 device. By tuning the chemical potentials on top and bottom surfaces, integer QHE with Landau filling factors, ν = 0, +/-1, and +/-2 are observed.

Attitudes of Residence Hall Students toward Student-Athletes: Implications for Advising, Training and Programming. Research Report #19-89.

ERIC Educational Resources Information Center

Engstrom, Cathy McHugh; Sedlacek, William E.

The study was conducted to assess residence hall student attitudes toward student-athletes at a predominantly white, eastern public institution. A total of 180 students living in traditional residence halls, suites, and apartments were sent the Situational Attitude Scale--Student-Athlete of whom 115 returned usable responses. Results showed that…

Conductivity predictions for the 5/2 fractional quantum Hall state using the composite fermion superconductor model

NASA Astrophysics Data System (ADS)

Foster, Kerwin Crayton

The fractional quantum Hall effect (FQHE) occurs when a two-dimensional electron gas is placed in a strong magnetic field at low temperatures. When this effect occurs the Hall resistance, RH, defined to be the Hall voltage divided by the current, is quantized, with RH = (1/nu)h/ e2 where nu = p/q is the Landau level filling fraction; and p and q are relatively prime integers. For almost all observed FQHE states, q is odd with one notable exception: the nu = 5/2 FQHE state. Understanding the nature of this incompressible even-denominator state is one of the central questions in the theory of the FQHE and is the subject of this Dissertation. We use a powerful theoretical tool for studying the FQHE: composite fermion theory. Composite fermions can be viewed as electrons bound to an even number of magnetic flux quanta. Jain has shown that the FQHE for electrons can be viewed as an integer quantum Hall effect (p = 1) for composite fermions. More recently, Halperin, Lee and Read developed a successful theory of the compressible nu = 1/2 state using composite fermions. There is now compelling theoretical evidence that the 5/2 state is a so-called Moore-Read state---a state which can be viewed as a spin-polarized p-wave superconductor of composite fermions. We have developed a semi-phenomenological description of this state by modifying the Halperin-Lee-Read theory, adding a p-wave pairing interaction between composite fermions by hand. The electromagnetic response functions for the resulting superconducting state of composite fermions are then calculated. We show that these response functions exhibit the expected BCS 'coherence factor' effects, such as the Hebel-Slichter peak. Using the composite fermion response functions, we then calculate the corresponding electronic response functions using Chern-Simons theory. We find that in the electronic response, the most striking coherence factor effects (e.g., the Hebel-Slichter peak) are strongly suppressed. However, the low-temperature o = 2Delta threshold behavior does show clear coherence factor effects. Finally, we use our model to predict the wave-vector and frequency dependence of the longitudinal conductivity, sigmaxx( q, o), which can be measured in surface-acoustic-wave propagation experiments.

Robustness of topological Hall effect of nontrivial spin textures

NASA Astrophysics Data System (ADS)

Jalil, Mansoor B. A.; Tan, Seng Ghee

2014-05-01

We analyze the topological Hall conductivity (THC) of topologically nontrivial spin textures like magnetic vortices and skyrmions and investigate its possible application in the readback for magnetic memory based on those spin textures. Under adiabatic conditions, such spin textures would theoretically yield quantized THC values, which are related to topological invariants such as the winding number and polarity, and as such are insensitive to fluctuations and smooth deformations. However, in a practical setting, the finite size of spin texture elements and the influence of edges may cause them to deviate from their ideal configurations. We calculate the degree of robustness of the THC output in practical magnetic memories in the presence of edge and finite size effects.

Hall viscosity and geometric response in the Chern-Simons matrix model of the Laughlin states

NASA Astrophysics Data System (ADS)

Lapa, Matthew F.; Hughes, Taylor L.

2018-05-01

We study geometric aspects of the Laughlin fractional quantum Hall (FQH) states using a description of these states in terms of a matrix quantum mechanics model known as the Chern-Simons matrix model (CSMM). This model was proposed by Polychronakos as a regularization of the noncommutative Chern-Simons theory description of the Laughlin states proposed earlier by Susskind. Both models can be understood as describing the electrons in a FQH state as forming a noncommutative fluid, i.e., a fluid occupying a noncommutative space. Here, we revisit the CSMM in light of recent work on geometric response in the FQH effect, with the goal of determining whether the CSMM captures this aspect of the physics of the Laughlin states. For this model, we compute the Hall viscosity, Hall conductance in a nonuniform electric field, and the Hall viscosity in the presence of anisotropy (or intrinsic geometry). Our calculations show that the CSMM captures the guiding center contribution to the known values of these quantities in the Laughlin states, but lacks the Landau orbit contribution. The interesting correlations in a Laughlin state are contained entirely in the guiding center part of the state/wave function, and so we conclude that the CSMM accurately describes the most important aspects of the physics of the Laughlin FQH states, including the Hall viscosity and other geometric properties of these states, which are of current interest.

Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

DOE PAGES

Haseman, M. S.; Saadatkia, Pooneh; Warfield, J. T.; ...

2017-11-28

Here, Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystalsmore » was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.« less

Unsteady Heat and Mass Transfer of Chemically Reacting Micropolar Fluid in a Porous Channel with Hall and Ion Slip Currents

PubMed Central

2014-01-01

This paper presents an incompressible two-dimensional heat and mass transfer of an electrically conducting micropolar fluid flow in a porous medium between two parallel plates with chemical reaction, Hall and ion slip effects. Let there be periodic injection or suction at the lower and upper plates and the nonuniform temperature and concentration at the plates are varying periodically with time. The flow field equations are reduced to nonlinear ordinary differential equations using similarity transformations and then solved numerically by quasilinearization technique. The profiles of velocity components, microrotation, temperature distribution and concentration are studied for different values of fluid and geometric parameters such as Hartmann number, Hall and ion slip parameters, inverse Darcy parameter, Prandtl number, Schmidt number, and chemical reaction rate and shown in the form of graphs. PMID:27419211

Master equation for open two-band systems and its applications to Hall conductance

NASA Astrophysics Data System (ADS)

Shen, H. Z.; Zhang, S. S.; Dai, C. M.; Yi, X. X.

2018-02-01

Hall conductivity in the presence of a dephasing environment has recently been investigated with a dissipative term introduced phenomenologically. In this paper, we study the dissipative topological insulator (TI) and its topological transition in the presence of quantized electromagnetic environments. A Lindblad-type equation is derived to determine the dynamics of a two-band system. When the two-band model describes TIs, the environment may be the fluctuations of radiation that surround the TIs. We find the dependence of decay rates in the master equation on Bloch vectors in the two-band system, which leads to a mixing of the band occupations. Hence the environment-induced current is in general not perfectly topological in the presence of coupling to the environment, although deviations are small in the weak limit. As an illustration, we apply the Bloch-vector-dependent master equation to TIs and calculate the Hall conductance of tight-binding electrons in a two-dimensional lattice. The influence of environments on the Hall conductance is presented and discussed. The calculations show that the phase transition points of the TIs are robust against the quantized electromagnetic environment. The results might bridge the gap between quantum optics and topological photonic materials.

Temperature-driven band inversion in Pb 0.77 Sn 0.23 Se : Optical and Hall effect studies

DOE PAGES

Anand, Naween; Buvaev, Sanal; Hebard, A. F.; ...

2014-12-23

Optical and Hall-effect measurements have been performed on single crystals of Pb₀.₇₇Sn₀.₂₃Se, a IV-VI mixed chalcogenide. The temperature dependent (10–300 K) reflectance was measured over 40–7000 cm⁻¹ (5–870 meV) with an extension to 15,500 cm⁻¹ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy opticalmore » spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Thus, density function theory calculation for the electronic band structure also make similar predictions.« less

Large anomalous Hall effect in Pt interfaced with perpendicular anisotropy ferrimagnetic insulator

NASA Astrophysics Data System (ADS)

Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Garay, Javier; Shi, Jing; Shines Team

We demonstrate the strain induced perpendicular magnetic anisotropy (PMA) in a ferrimagnetic insulator (FMI), Tm3Fe5O12 (TIG) and the first observation of large anomalous Hall effect (AHE) in TIG/Pt bilayers. Atomically flat TIG films were deposited by a laser molecular beam epitaxy system on (111)-orientated substituted gadolinium gallium garnet substrates. The strength of PMA could be effectively tuned by controlling the oxygen pressure during deposition. Sharp squared anomalous Hall hysteresis loops were observed in bilayers of TIG/Pt over a range of thicknesses of Pt, with the maximum AHE conductivity reaching 1 S/cm at room temperature. The AHE vanishes when a 5 nm Cu layer was inserted between Pt and TIG, strongly indicating the proximity-induced ferromagnetism in Pt. The large AHE in the bilayer structures demonstrates a potential use of PMA-FMI related heterostructures in spintronics. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # SC0012670.

Hall effects on MHD flow of heat generating/absorbing fluid through porous medium in a rotating parallel plate channel

NASA Astrophysics Data System (ADS)

Swarnalathamma, B. V.; Krishna, M. Veera

2017-07-01

We studied heat transfer on MHD convective flow of viscous electrically conducting heat generating/absorbing fluid through porous medium in a rotating channel under uniform transverse magnetic field normal to the channel and taking Hall current. The flow is governed by the Brinkman's model. The diagnostic solutions for the velocity and temperature are obtained by perturbation technique and computationally discussed with respect to flow parameters through the graphs. The skin friction and Nusselt number are also evaluated and computationally discussed with reference to pertinent parameters in detail.

Topological Valley Currents in Gapped Dirac Materials

NASA Astrophysics Data System (ADS)

Lensky, Yuri D.; Song, Justin C. W.; Samutpraphoot, Polnop; Levitov, Leonid S.

2015-06-01

Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent. Valley currents induced by an external bias are characterized by a quantized half-integer valley Hall conductivity. The undergap currents dominate magnetization and the charge Hall effect in a light-induced valley-polarized state.

Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface

NASA Astrophysics Data System (ADS)

Ahadi, Kaveh; Kim, Honggyu; Stemmer, Susanne

2018-05-01

Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ˜3.9 × 1014 cm-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure, and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.

Topological Hall Effect in Skyrmions: A Nonequilibrium Coherent Transport Approach

NASA Astrophysics Data System (ADS)

Yin, Gen; Zang, Jiadong; Lake, Roger

2014-03-01

Skyrmion is a topological spin texture recently observed in many materials with broken inversion symmetry. In experiments, one effective method to detect the skyrmion crystal phase is the topological Hall measurement. At adiabatic approximation, previous theoretical studies show that the Hall signal is provided by an emergent magnetic field, which explains the topological Hall effect in the classical level. Motivated by the potential device application of skyrmions as digital bits, it is important to understand the topological Hall effect in the mesoscopic level, where the electron coherence should be considered. In this talk, we will discuss the quantum aspects of the topological Hall effect on a tight binding setup solved by nonequilibrium Green's function (NEGF). The charge distribution, Hall potential distribution, thermal broadening effect and the Hall resistivity are investigated in detail. The relation between the Hall resistance and the DM interaction is investigated. Driven by the spin transferred torque (SST), Skyrmion dynamics is previously studied within the adiabatic approximation. At the quantum transport level, this talk will also discuss the non-adiabatic effect in the skyrmion motion with the presence of the topological Hall effect. This material is based upon work supported by the National Science Foundation under Grant Nos. NSF 1128304 and NSF 1124733. It was also supported in part by FAME, one of six centers of STARnet, an SRC program sponsored by MARCO and DARPA.

Fully nonlinear development of the most unstable goertler vortex in a three dimensional boundary layer

NASA Technical Reports Server (NTRS)

Otto, S. R.; Bassom, Andrew P.

1992-01-01

The nonlinear development is studied of the most unstable Gortler mode within a general 3-D boundary layer upon a suitably concave surface. The structure of this mode was first identified by Denier, Hall and Seddougui (1991) who demonstrated that the growth rate of this instability is O(G sup 3/5) where G is the Gortler number (taken to be large here), which is effectively a measure of the curvature of the surface. Previous researchers have described the fate of the most unstable mode within a 2-D boundary layer. Denier and Hall (1992) discussed the fully nonlinear development of the vortex in this case and showed that the nonlinearity causes a breakdown of the flow structure. The effect of crossflow and unsteadiness upon an infinitesimal unstable mode was elucidated by Bassom and Hall (1991). They demonstrated that crossflow tends to stabilize the most unstable Gortler mode, and for certain crossflow/frequency combinations the Gortler mode may be made neutrally stable. These vortex configurations naturally lend themselves to a weakly nonlinear stability analysis; work which is described in a previous article by the present author. Here we extend the ideas of Denier and Hall (1992) to the three-dimensional boundary layer problem. It is found that the numerical solution of the fully nonlinear equations is best conducted using a method which is essentially an adaption of that utilized by Denier and Hall (1992). The influence of crossflow and unsteadiness upon the breakdown of the flow is described.

ION ACOUSTIC TURBULENCE, ANOMALOUS TRANSPORT, AND SYSTEM DYNAMICS IN HALL EFFECT THRUSTERS

DTIC Science & Technology

2017-06-30

17394 4 / 13 HALL EFFECT THRUSTERS Hall Effect Thrusters (HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid...HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ...Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ Electron ExB Drift Unmagnetized Ions Results in Hall Current

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

DOE PAGES

Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

2016-05-04

Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at themore » double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

NASA Astrophysics Data System (ADS)

Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

2016-08-01

Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

Hole mobilities and the effective Hall factor in p-type GaAs

NASA Astrophysics Data System (ADS)

Wenzel, M.; Irmer, G.; Monecke, J.; Siegel, W.

1997-06-01

We prove the effective Hall factor in p-GaAs to be larger than values discussed in the literature up to now. The scattering rates for the relevant scattering mechanisms in p-GaAs have been recalculated after critical testing the existing models. These calculations allow to deduce theoretical drift and theoretical Hall mobilities as functions of temperature which can be compared with measured data. Theoretical Hall factors in the heavy and light hole bands and an effective Hall factor result. The calculated room temperature values of the drift mobility and of the effective Hall factor are 118 cm2/V s and 3.6, respectively. The fitted acoustic deformation potential E1=7.9 eV and the fitted optical coupling constant DK=1.24×1011 eV/m are close to values published before. It is shown that the measured strong dependence of the Hall mobility on the Hall concentration is not mainly caused by scattering by ionized impurities but by the dependence of the effective Hall factor on the hole concentration.

Surface and 3D Quantum Hall Effects from Engineering of Exceptional Points in Nodal-Line Semimetals

NASA Astrophysics Data System (ADS)

Molina, Rafael A.; González, José

2018-04-01

We show that, under a strong magnetic field, a 3D nodal-line semimetal is driven into a topological insulating phase in which the electronic transport takes place at the surface of the material. When the magnetic field is perpendicular to the nodal ring, the surface states of the semimetal are transmuted into Landau states which correspond to exceptional points, i.e., branch points in the spectrum of a non-Hermitian Hamiltonian which arise upon the extension to complex values of the momentum. The complex structure of the spectrum then allows us to express the number of zero-energy flat bands in terms of a new topological invariant counting the number of exceptional points. When the magnetic field is parallel to the nodal ring, we find that the bulk states are built from the pairing of surfacelike evanescent waves, giving rise to a 3D quantum Hall effect with a flat level of Landau states residing in parallel 2D slices of the 3D material. The Hall conductance is quantized in either case in units of e2/h , leading in the 3D Hall effect to a number of channels growing linearly with the section of the surface and opening the possibility to observe a macroscopic chiral current at the surface of the material.

Structural, magnetic, and electrical properties of perpendicularly magnetized Mn4-xFexGe thin films

NASA Astrophysics Data System (ADS)

Niesen, Alessia; Teichert, Niclas; Matalla-Wagner, Tristan; Balluf, Jan; Dohmeier, Niklas; Glas, Manuel; Klewe, Christoph; Arenholz, Elke; Schmalhorst, Jan-Michael; Reiss, Günter

2018-03-01

We investigated the structural, magnetic, and electrical properties of the perpendicularly magnetized Mn4-xFexGe thin films (0.3 ≤ x ≤ 1). The tetragonally distorted structure was verified for all investigated stoichiometries. High coercive fields in the range of 1.61 T to 3.64 T at room temperature were measured and showed increasing behavior with decreasing Fe content. The magnetic moments range from (0.16 ± 0.02) μB/f.u for Mn3Fe1Ge to (0.08 ± 0.01) μB/f.u for Mn3.4Fe0.6Ge. X-ray absorption spectroscopy revealed ferromagnetic coupling of the Mn and Fe atoms in Mn4-xFexGe and the ferrimagnetic ordering of the Mn magnetic moments. Anomalous Hall effect measurements showed sharp magnetization switching. The resistivity values are in the range of 207 μΩ cm to 457 μΩ cm depending on the stoichiometry. From the contribution of the ordinary Hall effect in the anomalous Hall effect measurements, Hall constants, the charge carrier density, and mobility were deduced. The thermal conductivity was calculated using the Wiedemann-Franz law. All these values are strongly influenced by the stoichiometry. An alternative method was introduced for the determination of perpendicular magnetic anisotropy. The values range between 0.26 MJ/m3 and 0.36 MJ/m3.

Optimal Decay of Wannier functions in Chern and Quantum Hall Insulators

NASA Astrophysics Data System (ADS)

Monaco, Domenico; Panati, Gianluca; Pisante, Adriano; Teufel, Stefan

2018-01-01

We investigate the localization properties of independent electrons in a periodic background, possibly including a periodic magnetic field, as e. g. in Chern insulators and in quantum Hall systems. Since, generically, the spectrum of the Hamiltonian is absolutely continuous, localization is characterized by the decay, as {|x| → ∞} , of the composite (magnetic) Wannier functions associated to the Bloch bands below the Fermi energy, which is supposed to be in a spectral gap. We prove the validity of a localization dichotomy in the following sense: either there exist exponentially localized composite Wannier functions, and correspondingly the system is in a trivial topological phase with vanishing Hall conductivity, or the decay of any composite Wannier function is such that the expectation value of the squared position operator, or equivalently of the Marzari-Vanderbilt localization functional, is {+ ∞} . In the latter case, the Bloch bundle is topologically non-trivial, and one expects a non-zero Hall conductivity.

Faster Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Johnson, Daniel D.; Walker, Daniel D.

1993-01-01

Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

NASA Astrophysics Data System (ADS)

Yan, J.; Luo, X.; Chen, F. C.; Pei, Q. L.; Lin, G. T.; Han, Y. Y.; Hu, L.; Tong, P.; Song, W. H.; Zhu, X. B.; Sun, Y. P.

2017-07-01

Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity ρxx and Hall resistivity ρxy), and thermal transport properties [including heat capacity Cp(T) and thermoelectric power S(T)] have been measured. There are some interesting phenomena: (i) Cr0.68Se presents a non-collinear antiferromagnetic (AFM) semiconducting behavior at the Néel temperature of TN = 42 K and with the activated energy of Eg = 3.9 meV; (ii) it exhibits the anomalous Hall effect (AHE) below TN and large negative magnetoresistance about 83.7% (2 K, 8.5 T). The AHE coefficient RS is 0.385 cm-3/C at T = 2 K, and the AHE conductivity σH is about 1 Ω-1 cm-1 at T = 40 K; (iii) the scaling behavior between the anomalous Hall resistivity ρxy A and the longitudinal resistivity ρxx is linear, and further analysis implies that the origin of the AHE in Cr0.68Se is dominated by the skew-scattering mechanism. Our results may be helpful for exploring the potential application of these kinds of 2D AFM semiconductors.

Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration

NASA Astrophysics Data System (ADS)

Qamar, Afzaal; Dao, Dzung Viet; Dinh, Toan; Iacopi, Alan; Walker, Glenn; Phan, Hoang-Phuong; Hold, Leonie; Dimitrijev, Sima

2017-04-01

This article reports the results on the piezo-Hall effect in single crystal n-type 3C-SiC(100) having a low carrier concentration. The effect of the crystallographic orientation on the piezo-Hall effect has been investigated by applying stress to the Hall devices fabricated in different crystallographic directions. Single crystal n-type 3C-SiC(100) and 3C-SiC(111) were grown by low pressure chemical vapor deposition at 1250 °C. Fundamental piezo-Hall coefficients were obtained using the piezo-Hall effect measurements as P11 = (-29 ± 1.3) × 10-11 Pa-1, P12 = (11.06 ± 0.5)× 10-11 Pa-1, and P44 = (-3.4 ± 0.7) × 10-11 Pa-1. It has been observed that the piezo-Hall coefficients of n-type 3C-SiC(100) show a completely different behavior as compared to that of p-type 3C-SiC.

Extremely correlated Fermi liquid theory of the t-J model in 2 dimensions: low energy properties

NASA Astrophysics Data System (ADS)

Shastry, B. Sriram; Mai, Peizhi

2018-01-01

Low energy properties of the metallic state of the two-dimensional t-J model are presented for second neighbor hopping with hole-doping (t\\prime ≤slant 0) and electron-doping (t\\prime > 0), with various superexchange energy J. We use a closed set of equations for the Greens functions obtained from the extremely correlated Fermi liquid theory. These equations reproduce the known low energies features of the large U Hubbard model in infinite dimensions. The density and temperature dependent quasiparticle weight, decay rate and the peak spectral heights over the Brillouin zone are calculated. We also calculate the resistivity, Hall conductivity, Hall number and cotangent Hall angle. The spectral features display high thermal sensitivity at modest T for density n≳ 0.8, implying a suppression of the effective Fermi-liquid temperature by two orders of magnitude relative to the bare bandwidth. The cotangent Hall angle exhibits a T 2 behavior at low T, followed by an interesting kink at higher T. The Hall number exhibits strong renormalization due to correlations. Flipping the sign of t\\prime changes the curvature of the resistivity versus T curves between convex and concave. Our results provide a natural route for understanding the observed difference in the temperature dependent resistivity of strongly correlated electron-doped and hole-doped matter.

An orientation measurement method based on Hall-effect sensors for permanent magnet spherical actuators with 3D magnet array.

PubMed

Yan, Liang; Zhu, Bo; Jiao, Zongxia; Chen, Chin-Yin; Chen, I-Ming

2014-10-24

An orientation measurement method based on Hall-effect sensors is proposed for permanent magnet (PM) spherical actuators with three-dimensional (3D) magnet array. As there is no contact between the measurement system and the rotor, this method could effectively avoid friction torque and additional inertial moment existing in conventional approaches. Curved surface fitting method based on exponential approximation is proposed to formulate the magnetic field distribution in 3D space. The comparison with conventional modeling method shows that it helps to improve the model accuracy. The Hall-effect sensors are distributed around the rotor with PM poles to detect the flux density at different points, and thus the rotor orientation can be computed from the measured results and analytical models. Experiments have been conducted on the developed research prototype of the spherical actuator to validate the accuracy of the analytical equations relating the rotor orientation and the value of magnetic flux density. The experimental results show that the proposed method can measure the rotor orientation precisely, and the measurement accuracy could be improved by the novel 3D magnet array. The study result could be used for real-time motion control of PM spherical actuators.

Ionospheric absorption, typical ionization, conductivity, and possible synoptic heating parameters in the upper atmosphere

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walker, J.K.; Bhatnagar, V.P.

1989-04-01

Relations for the average energetic particle heating and the typical Hall and Pedersen conductances, as functions of the ground-based Hf radio absorption, are determined. Collis and coworkers used the geosynchronous GEOS 2 particle data to relate or ''calibrate'' the auroral absorption on the same magnetic field lines with five levels of D region ionization. These ionospheric models are related to a Chapman layer that extends these models into the E region. The average energetic particle heating is calculated for each of these models using recent expressions for the effective recombination coefficient. The corresponding height-integrated heating rates are determined and relatedmore » to the absorption with a quadratic expression. The average Hall and Pedersen conductivities are calculated for each of the nominal absorption ionospheric models. The corresponding height-integrated conductances for nighttime conditions are determined and related to the absorption. Expressions for these conductances during disturbed sunlit conditions are also determined. These relations can be used in conjunction with simultaneous ground-based riometric and magnetic observations to determines the average Hall and Pedersen currents and the Joule heating. The typical daily rate of temperature increase in the mesosphere for storm conditions is several 10 K for both the energetic particle and the Joule heating. The increasing importance of these parameters of the upper and middle atmospheres is discussed. It is proposed that northern hemisphere ionospheric, current, and heating synoptic models and parameters be investigated for use on a regular basis. copyright American Geophysical Union 1989« less

Current-induced switching in a magnetic insulator

NASA Astrophysics Data System (ADS)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Destruction of the Fractional Quantum Hall Effect by Disorder

DOE R&D Accomplishments Database

Laughlin, R. B.

1985-07-01

It is suggested that Hall steps in the fractional quantum Hall effect are physically similar to those in the ordinary quantum Hall effect. This proposition leads to a simple scaling diagram containing a new type of fixed point, which is identified with the destruction of the fractional states by disorder. 15 refs., 3 figs.

First- and second-order metal-insulator phase transitions and topological aspects of a Hubbard-Rashba system

NASA Astrophysics Data System (ADS)

Marcelino, Edgar

2017-05-01

This paper considers a model consisting of a kinetic term, Rashba spin-orbit coupling and short-range Coulomb interaction at zero temperature. The Coulomb interaction is decoupled by a mean-field approximation in the spin channel using field theory methods. The results feature a first-order phase transition for any finite value of the chemical potential and quantum criticality for vanishing chemical potential. The Hall conductivity is also computed using the Kubo formula in a mean-field effective Hamiltonian. In the limit of infinite mass the kinetic term vanishes and all the phase transitions are of second order; in this case the spontaneous symmetry-breaking mechanism adds a ferromagnetic metallic phase to the system and features a zero-temperature quantization of the Hall conductivity in the insulating one.

Topological Sachdev-Ye-Kitaev model

NASA Astrophysics Data System (ADS)

Zhang, Pengfei; Zhai, Hui

2018-05-01

In this Rapid Communication, we construct a large-N exactly solvable model to study the interplay between interaction and topology, by connecting the Sachdev-Ye-Kitaev (SYK) model with constant hopping. The hopping forms a band structure that can exhibit both topologically trivial and nontrivial phases. Starting from a topologically trivial insulator with zero Hall conductance, we show that the interaction can drive a phase transition to a topologically nontrivial insulator with quantized nonzero Hall conductance, and a single gapless Dirac fermion emerges when the interaction is fine tuned to the critical point. The finite temperature effect is also considered, and we show that the topological phase with a stronger interaction is less stable against temperature. Our model provides a concrete example to illustrate the interacting topological phases and phase transitions, and can shed light on similar problems in physical systems.

Electronic Transport and Quantum Hall Effect in Bipolar Graphene p-n-p Junctions

NASA Astrophysics Data System (ADS)

Özyilmaz, Barbaros; Jarillo-Herrero, Pablo; Efetov, Dmitri; Abanin, Dmitry A.; Levitov, Leonid S.; Kim, Philip

2007-10-01

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal Cd3 As2

NASA Astrophysics Data System (ADS)

Schumann, Timo; Galletti, Luca; Kealhofer, David A.; Kim, Honggyu; Goyal, Manik; Stemmer, Susanne

2018-01-01

The magnetotransport properties of epitaxial films of Cd3 As2 , a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.

Solid state switch panel. [determination of optimum transducer type for required switches

NASA Technical Reports Server (NTRS)

Beenfeldt, E.

1973-01-01

An intensive study of various forms of transducers was conducted with application towards hermetically sealing the transducer and all electronics. The results of the study indicated that the Hall effect devices and a LED/phototransistor combination were the most practical for this type of application. Therefore, hardware was developed utilizing a magnet/Hall effect transducer for single action switches and LED/phototransistor transducers for rotary multiposition or potentiometer applications. All electronics could be housed in a hermetically sealed compartment. A number of switches were built and models were hermetically sealed to prove the feasibility of this type of fabrication. One of each type of switch was subjected to temperature cycling, vibration, and EMI tests. The results of these tests are presented.

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

NASA Astrophysics Data System (ADS)

Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

2015-07-01

This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10-15 cm2 s-1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

Long-term variations and trends in the polar E-region

NASA Astrophysics Data System (ADS)

Bjoland, L. M.; Ogawa, Y.; Hall, C.; Rietveld, M.; Løvhaug, U. P.; La Hoz, C.; Miyaoka, H.

2017-10-01

As the EISCAT UHF radar system in Northern Scandinavia started its operations in the early 1980s, the collected data cover about three solar cycles. These long time-series provide us the opportunity to study long-term variations and trends of ionospheric parameters in the high latitude region. In the present study we have used the EISCAT Tromsø UHF data to investigate variations of the Hall conductivity and ion temperatures in the E-region around noon. Both the ion temperature and the peak altitude of the Hall conductivity are confirmed to depend strongly on solar zenith angle. However, the dependence on solar activity seems to be weak. In order to search for trends in these parameters, the ion temperature and peak altitude of the Hall conductivity data were adjusted for their seasonal and solar cycle dependence. A very weak descent (∼0.2 km/ decade) was seen in the peak altitude of the Hall conductivity. The ion temperature at 110 km shows a cooling trend (∼10 K/ decade). However, other parameters than solar zenith angle and solar activity seem to affect the ion temperature at this altitude, and a better understanding of these parameters is necessary to derive a conclusive trend. In this paper, we discuss what may cause the characteristics of the variations in the electric conductivities and ion temperatures in the high latitude region.

Prediction of a magnetic Weyl semimetal without spin-orbit coupling and strong anomalous Hall effect in the Heusler compensated ferrimagnet Ti2MnAl

NASA Astrophysics Data System (ADS)

Shi, Wujun; Muechler, Lukas; Manna, Kaustuv; Zhang, Yang; Koepernik, Klaus; Car, Roberto; van den Brink, Jeroen; Felser, Claudia; Sun, Yan

2018-02-01

We predict a magnetic Weyl semimetal in the inverse Heusler Ti2MnAl , a compensated ferrimagnet with a vanishing net magnetic moment and a Curie temperature of over 650 K. Despite the vanishing net magnetic moment, we calculate a large intrinsic anomalous Hall effect (AHE) of about 300 S/cm. It derives from the Berry curvature distribution of the Weyl points, which are only 14 meV away from the Fermi level and isolated from trivial bands. Different from antiferromagnets Mn3X (X =Ge , Sn, Ga, Ir, Rh, and Pt), where the AHE originates from the noncollinear magnetic structure, the AHE in Ti2MnAl stems directly from the Weyl points and is topologically protected. The large anomalous Hall conductivity (AHC) together with a low charge carrier concentration should give rise to a large anomalous Hall angle. In contrast to the Co-based ferromagnetic Heusler compounds, the Weyl nodes in Ti2MnAl do not derive from nodal lines due to the lack of mirror symmetries in the inverse Heusler structure. Since the magnetic structure breaks spin-rotation symmetry, the Weyl nodes are stable without SOC. Moreover, because of the large separation between Weyl points of opposite topological charge, the Fermi arcs extent up to 75 % of the reciprocal lattice vectors in length. This makes Ti2MnAl an excellent candidate for the comprehensive study of magnetic Weyl semimetals. It is the first example of a material with Weyl points, large anomalous Hall effect, and angle despite a vanishing net magnetic moment.

Throttling Impacts on Hall Thruster Performance, Erosion, and Qualification for NASA Science Missions

NASA Technical Reports Server (NTRS)

Dankanich, John W.; DeHoyos, Amado

2007-01-01

With the SMART-1, Department of Defense, and commercial industry successes in Hall thruster technologies, NASA has started considering Hall thrusters for science missions. The recent Discovery proposals included a Hall thruster science mission and the In-Space Propulsion Project is investing in Hall thruster technologies. As the confidence in Hall thrusters improve, ambitious multi-thruster missions are being considered. Science missions often require large throttling ranges due to the 1/r(sup 2) power drop-off from the sun. Deep throttling of Hall thrusters will impact the overall system performance. Also, Hall thrusters can be throttled with both current and voltage, impacting erosion rates and performance. Last, electric propulsion thruster lifetime qualification has previously been conducted with long duration full power tests. Full power tests may not be appropriate for NASA science missions, and a combination of lifetime testing at various power levels with sufficient analysis is recommended. Analyses of various science missions and throttling schemes using the Aerojet BPT-4000 and NASA 103M HiVHAC thruster are presented.

Tunable Intrinsic Spin Hall Conductivities in Bi2(Se,Te)3 Topological Insulators

NASA Astrophysics Data System (ADS)

Şahin, Cüneyt; Flatté, Michael E.

2015-03-01

It has been recently shown by spin-transfer torque measurements that Bi2Se3 exhibits a very large spin Hall conductivity (SHC). It is expected that Bi2Te3, a topological insulator with similar crystal and band structures as well as large spin-orbit coupling, would also exhibit a giant SHC. In this study we have calculated intrinsic spin Hall conductivities of Bi2Se3andBi2Te3 topological insulators from a tight-binding Hamiltonian including two nearest-neighbor interactions. We have calculated the Berry curvature, used the Kubo formula in the static, clean limit and shown that both materials exhibit giant spin Hall conductivities, consistent with the results of Ref. 1 and larger than previously reported Bi1-xSbx alloys. The density of Berry curvature has also been computed from the full Brillouin zone in order to compute the dependence of the SHC in these materials on the Fermi energy. Finally we report the intrinsic SHC for Bi2(Se,Te)3 topological insulators, which changes dramatically with doping or gate voltage. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

Giant Hall Photoconductivity in Narrow-Gapped Dirac Materials

NASA Astrophysics Data System (ADS)

Song, Justin C. W.; Kats, Mikhail A.

2016-12-01

Carrier dynamics acquire a new character in the presence of Bloch-band Berry curvature, which naturally arises in gapped Dirac materials (GDMs). Here we argue that photoresponse in GDMs with small band gaps is dramatically enhanced by Berry curvature. This manifests in a giant and saturable Hall photoconductivity when illuminated by circularly polarized light. Unlike Hall motion arising from a Lorentz force in a magnetic field, which impedes longitudinal carrier motion, Hall photoconductivity arising from Berry curvature can boost longitudinal carrier transport. In GDMs, this results in a helicity-dependent photoresponse in the Hall regime, where photoconductivity is dominated by its Hall component. We find that the induced Hall conductivity per incident irradiance is enhanced by up to six orders of magnitude when moving from the visible regime (with corresponding band gaps) to the far infrared. These results suggest that narrow-gap GDMs are an ideal test-bed for the unique physics that arise in the presence of Berry curvature, and open a new avenue for infrared and terahertz optoelectronics.

Imaging snake orbits at graphene n -p junctions

NASA Astrophysics Data System (ADS)

Kolasiński, K.; Mreńca-Kolasińska, A.; Szafran, B.

2017-01-01

We consider conductance mapping of the snake orbits confined along the n -p junction defined in graphene by the electrostatic doping in the quantum Hall regime. We explain the periodicity of conductance oscillations at the magnetic field and the Fermi energy scales by the properties of the n -p junction as a conducting channel. We evaluate the conductance maps for a floating gate scanning the surface of the device. In the quantum Hall conditions the currents flow near the edges of the sample and along the n -p junction. The conductance mapping resolves only the n -p junction and not the edges. The conductance oscillations along the junction are found in the maps with periodicity related to the cyclotron orbits of the scattering current. Stronger probe potentials provide support to localized resonances at one of the sides of the junction with current loops that interfere with the n -p junction currents. The interference results in a series of narrow lines parallel to the junction with positions that strongly depend on the magnetic field through the Aharonov-Bohm effect. The consequences of a limited transparency of finite-width n -p junctions are also discussed.

Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-01-15

We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

DOE PAGES

Wang, Jing; Zhou, Quan; Lian, Biao; ...

2015-08-31

Here, we propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional s -wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance willmore » be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between e 2 /2h and e2 /h with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.« less

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jing; Zhou, Quan; Lian, Biao

Here, we propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional s -wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance willmore » be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between e 2 /2h and e2 /h with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.« less

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arapov, Yu. G.; Gudina, S. V.; Klepikova, A. S., E-mail: klepikova@imp.uran.ru

2017-02-15

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields Ð’ = 0–16 T and temperatures T = 0.05–4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.

Spin-orbit assisted transmission at 3d/5d metallic interfaces

NASA Astrophysics Data System (ADS)

Jaffres, Henri; Barbedienne, Quentin; Jouy, Augustin; Reyren, Nicolas; George, Jean-Marie; Laboratoire de Physique Et Des Plasmas, Ecole Polytechnique, Palaiseau, France Team; Unite Mixte de Physique Cnrs-Thales, Palaiseau, France Team

We will describe the anatomy of spin-transport and spin-orbit torques (SOT) at spin-orbit active interfaces involving 5d transition metals (TM) as heavy metals spin-Hall effect (SHE) materials and 3d TM in [Co,Ni]/Pt, NiFe. NiFe/Au:W and Co/Pt/Au;W systems. In the case of Pt, recent studies have put forward the major role played by the spin-memory loss (SML), the electronic transparency at 3d/5d interfaces and the inhomogeneity of the conductivity in the CIP-geometry. Ingredients to consider for spin-transport and spin-Hall Magnetoresistance (SMR) are the conductivity, the spin-current profiles across the multilayers and the spin-transmission. We will present SMR measurements observed on these systems possibly involving interfacial Anisotropy of Magnetoresistance (AIMR) contributions. We analyze in large details our SMR signals in the series of samples owing: i) the exact conductivity profile across the multilayers via the Camley-Barnas approach and the spin current profile generated by SHE. We will discuss the role of the generalized spin-mixing conductance on the spin-transport properties and spin-orbit torques.

Electric fields and conductivity in the nighttime E-region - A new magnetosphere-ionosphere-atmosphere coupling effect

NASA Technical Reports Server (NTRS)

Banks, P. M.; Yasuhara, F.

1978-01-01

Calculations have been made of the effects of intense poleward-directed electric fields upon the nighttime ionospheric E-region. The results show the Pedersen and Hall conductivities are substantially changed, thereby decreasing the ionospheric electrical load seen by magnetospheric sources. It appears that relatively large electric fields can exist in the absence of accompanying large field-aligned currents, as long as the underlying ionosphere remains in darkness and/or energetic particle precipitation is absent.

Anisotropic anomalous Hall effect in triangular itinerant ferromagnet Fe3GeTe2

NASA Astrophysics Data System (ADS)

Wang, Yihao; Xian, Cong; Wang, Jian; Liu, Bingjie; Ling, Langsheng; Zhang, Lei; Cao, Liang; Qu, Zhe; Xiong, Yimin

2017-10-01

Magnetic frustrated materials are of great interest for their novel spin-dependent transport properties. We report an anisotropic anomalous Hall effect in the triangular itinerant ferromagnet Fe3GeTe2 . When the current flows along the a b plane, Fe3GeTe2 exhibits the conventional anomalous Hall effect below the Curie temperature Tc, which can be depicted by Karplus-Luttinger theory. On the other hand, the topological Hall effect shows up below Tc with current along the c axis. The enhancement of Hall resistivity can be attributed to the chiral effect during the spin-flop process.

Substorm Birkeland currents and Cowling channels in the ionosphere

NASA Astrophysics Data System (ADS)

Fujii, R.

2016-12-01

Field-aligned current (FAC) connects electromagnetically the ionosphere with the magnetosphere and plays important roles on dynamics and energetics in the magnetosphere and the ionosphere. In particular, connections between FACs in the ionosphere give important information on various current sources in the magnetosphere and the linkage between them, although the connection between FACs in the ionosphere does not straightforwardly give that in the magnetosphere. FACs in the ionosphere are closed to each other through ionospheric currents determined with the electric field and the Hall and Pedersen conductivities. The electric field and the conductivities are not independently distributed, but rather they are harmonized with each other spatially and temporarily in a physically consistent manner to give a certain FAC. In particular, the divergence of the Hall current due to the inhomogeneity of the Hall conductivity either flows in/out to the magnetosphere as a secondary FAC or accumulates excess charges that produce a secondary electric field. This electric field drives a current circuit connecting the Hall current with the Pedersen current; a Cowling channel current circuit. The FAC (the electric field) we observe is the sum of the primary and secondary FACs (electric fields). The talk will present characteristics of FACs and associated electric field and auroras during substorms, and the ionospheric current closures between the FACs. A statistical study has shown that the majority of region 1 currents are connected to their adjacent region 2 or region 0 currents, indicating the Pedersen current closure rather than the Hall current closure is dominant. On the other hand, the Pedersen currents associated with surge and substorm-related auroras often are connected to the Hall currents, forming a Cowling channel current circuit within the ionosphere.

High temperature hall effect measurement system design, measurement and analysis

NASA Astrophysics Data System (ADS)

Berkun, Isil

A reliable knowledge of the transport properties of semiconductor materials is essential for the development and understanding of a number of electronic devices. In this thesis, the work on developing a Hall Effect measurement system with software based data acqui- sition and control for a temperature range of 300K-700K will be described. A system was developed for high temperature measurements of materials including single crystal diamond, poly-crystalline diamond, and thermoelectric compounds. An added capability for monitor- ing the current versus voltage behavior of the contacts was used for studying the influence of ohmic and non-ohmic contacts on Hall Effect measurements. The system has been primar- ily used for testing the transport properties of boron-doped single crystal diamond (SCD) deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor [1]. Diamond has several outstanding properties that are of high interest for its development as an electronic material. These include a relatively wide band gap of 5.5 (eV), high thermal conductivity, high mobility, high saturation velocity, and a high breakdown voltage. For a temperature range of 300K-700K, IV curves, Hall mobilities and carrier concentrations are shown. Temperature dependent Hall effect measurements have shown carrier concentrations from below 1017cm --3 to approximately 1021 cm--3 with mobilities ranging from 763( cm2/V s) to 0.15(cm 2/V s) respectively. Simulation results have shown the effects of single and mixed carrier models, activation energies, effective mass and doping concentrations. These studies have been helpful in the development of single crystal diamond for diode applications. Reference materials of Ge and GaAs were used to test the Hall Effect system. The system was also used to characterize polycrystalline diamond deposited on glass for electrochemical applications, and Mg2(Si,Sn) compounds which are promising candidates of low-cost, light weight and non-toxic thermoelectric materials made from abundant elements and are suited for power generation application in the intermediate temperature range of (600 K - 800 K). In this work the thermoelectric materials were synthesized by a solid-state reac- tion using a molten-salt sealing method. The ingots produced were then powder processed, followed by pulsed electric sintering (PECS) densification. A set of Mg2.08Si0.4--x Sn0.6Sbx (0 ≤ x ≤ 0.072) compounds were investigated and a peak ZT of 1.50 was obtained at 716 K in Mg2.08Si 0.364Sn0.6Sb0.036 [2]. The high ZT value is related to a high electrical conductivity in these samples, which are possibly caused by a magnesium deficiency in the final prod- uct. Analysis of the measured results using LabVIEW and MATLAB developed programs showed good agreement with expected results and gave insight on mixed carrier dopant concentrations. [1] I. Berkun, S. N. Demlow, N. Suwanmonkha, T. P. Hogan, and T. A. Grotjohn, "Hall Effect Measurement System for Characterization of Doped Single Crystal Diamond," in MRS Proceedings, vol. 1511, Cambridge Univ Press, 2013. [2] P. Gao, I. Berkun, R. D. Schmidt, M. F. Luzenski, X. Lu, P. B. Sarac, E. D. Case, and T. P. Hogan, "Transport and Mechanical Properties of High-ZT Mg2. 08si0. 4- x Sn0. 6sb x Thermoelectric Materials," Journal of Electronic Materials, pp. 1--14, 2013.

Intrinsic Dawn-Dusk Asymmetry of Magnetotail Thin Current Sheet

NASA Astrophysics Data System (ADS)

Lu, S.; Pritchett, P. L.; Angelopoulos, V.; Artemyev, A.

2017-12-01

Magnetic reconnection and its related phenomena (flux ropes, dipolarization fronts, bursty bulk flows, particle injections, etc.) occur more frequently on the duskside in the Earth's magnetotail. Magnetohydrodynamic simulations attributed the asymmetry to the nonuniform ionospheric conductance through global scale magnetosphere-ionosphere interaction. Hybrid simulations, on the other hand, found an alternative responsible mechanism: the Hall effect in the magnetotail thin current sheet, but left an open question: What is the physical origin of the asymmetric Hall effect? The answer could be the temperature difference on the two sides and/or the dawn-dusk transportation of magnetic flux and plasmas. In this work, we use 3-D particle-in-cell simulations to further explore the magnetotail dawn-dusk asymmetry. The magnetotail equilibrium contains a dipole magnetic field and a current sheet region. The simulation is driven by a symmetric and localized (in the y direction) high-latitude electric field, under which the current sheet thins with a decrease of Bz. During the same time, a dawn-dusk asymmetry is formed intrinsically in the thin current sheet, with a smaller Bz, a stronger Hall effect (indicated by the Hall electric field Ez), and a stronger cross-tail current jy on the duskside. The deep origin of the asymmetry is also shown to be dominated by the dawnward E×B drift of magnetic flux and plasmas. A direct consequence of this intrinsic dawn-dusk asymmetry is that it favors magnetotail reconnection and related phenomena to preferentially occur on the duskside.

Formulation of the relativistic quantum Hall effect and parity anomaly

NASA Astrophysics Data System (ADS)

Yonaga, Kouki; Hasebe, Kazuki; Shibata, Naokazu

2016-06-01

We present a relativistic formulation of the quantum Hall effect on Haldane sphere. An explicit form of the pseudopotential is derived for the relativistic quantum Hall effect with/without mass term. We clarify particular features of the relativistic quantum Hall states with the use of the exact diagonalization study of the pseudopotential Hamiltonian. Physical effects of the mass term to the relativistic quantum Hall states are investigated in detail. The mass term acts as an interpolating parameter between the relativistic and nonrelativistic quantum Hall effects. It is pointed out that the mass term unevenly affects the many-body physics of the positive and negative Landau levels as a manifestation of the "parity anomaly." In particular, we explicitly demonstrate the instability of the Laughlin state of the positive first relativistic Landau level with the reduction of the charge gap.

P-type conductivity in annealed strontium titanate

DOE PAGES

Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

2015-12-17

In this study, Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO 3, or STO) samples that were annealed at 1200°C. Room temperature mobilities above 100 cm 2/Vs were measured, an order of magnitude higher than those for electrons (5-10 cm 2/Vs). Average hole densities were in the 10 9-10 10 cm -3 range, consistent with a deep acceptor.

Overcoming Film Quality Issues for Conjugated Polymers Doped with F4TCNQ by Solution Sequential Processing: Hall Effect, Structural, and Optical Measurements.

PubMed

Scholes, D Tyler; Hawks, Steven A; Yee, Patrick Y; Wu, Hao; Lindemuth, Jeffrey R; Tolbert, Sarah H; Schwartz, Benjamin J

2015-12-03

We demonstrate that solution-sequential processing (SqP) can yield heavily doped pristine-quality films when used to infiltrate the molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) into pure poly(3-hexylthiophene) (P3HT) polymer layers. Profilometry measurements show that the SqP method produces doped films with essentially the same surface roughness as pristine films, and 2-D grazing-incidence wide-angle X-ray scattering (GIWAXS) confirms that SqP preserves both the size and orientation of the pristine polymer's crystallites. Unlike traditional blend-cast F4TCNQ/P3HT doped films, our sequentially processed layers have tunable and reproducible conductivities reaching as high as 5.5 S/cm even when measured over macroscopic (>1 cm) distances. The high conductivity and superb film quality allow for meaningful Hall effect measurements, which reveal p-type conduction and carrier concentrations tunable from 10(16) to 10(20) cm(-3) and hole mobilities ranging from ∼0.003 to 0.02 cm(2) V(-1) s(-1) at room temperature over the doping levels examined.

Fractional conductivity in 2D and 3D crystals

NASA Astrophysics Data System (ADS)

Sidharth, B. G.; Das, Abhishek; Valluri, S. R.

2018-04-01

In this work, we show that the phenomenon of fractional quantum Hall effect can be obtained for 2D and 3D crystal structures, using the noncommutative nature of spacetime and the Lambert W function. This fractional conductivity has been shown to be a consequence of the noncommutative geometry underlying the structure of graphene. Also, it has been shown, for graphene, that in the 3D case the conductivity is extremely small and depends on the self-energy that arises due to random fluctuations or zitterbewegung.

Magnetic Field Tailored Annular Hall Thruster with Anode Layer

NASA Astrophysics Data System (ADS)

Lee, Seunghun; Kim, Holak; Kim, Junbum; Lim, Youbong; Choe, Wonho; Korea Institute of Materials Science Collaboration

2016-09-01

Plasma propulsion system is one of the key components for advanced missions of satellites as well as deep space exploration. A typical plasma propulsion system is Hall effect thruster that uses crossed electric and magnetic fields to ionize a propellant gas and to accelerate the ionized gas to generate momentum. In Hall thruster plasmas, magnetic field configuration is important due to the fact that electron confinement in the electromagnetic fields affects both plasma and ion beam characteristics as well as thruster performance parameters including thrust, specific impulse, power efficiency, and life time. In this work, development of an anode layer Hall thruster (TAL) with magnetic field tailoring has been attempted. The TAL is possible to keep discharge in 1 to 2 kilovolts of anode voltage, which is useful to obtain high specific impulse. The magnetic field tailoring is used to minimize undesirable heat dissipation and secondary electron emission from the wall surrounding the plasma. We will report 3 W and 200 W thrusters performances measured by a pendulum thrust stand according to the magnetic field configuration. Also, the measured result will be compared with the plasma diagnostics conducted by an angular Faraday probe, a retarding potential analyzer, and a ExB probe.

A new characterization of three-dimensional conductivity backbone above and below the percolation threshold

NASA Astrophysics Data System (ADS)

Skal, Asya S.

1996-08-01

A new definition of three-dimensional conductivity backbone, obtained from a distribution function of Joule heat and the Hall coefficient is introduced. The fractal dimension d fB = d - ( {g}/{v}) = 2.25 of conductivity backbone for both sides of the threshold is obtained from a critical exponent of the Hall coefficient g = 0.6. This allows one to construct, below the threshold, a new order parameter of metal-conductor transition—the two-component infinite conductivity back-bone and tested scaling relation, proposed by Alexander and Orbach [ J. Phys. Rev. Lett.43, 1982, L625] for both sides of a threshold.

Quest for Casimir repulsion between Chern-Simons surfaces

NASA Astrophysics Data System (ADS)

Fialkovsky, Ignat; Khusnutdinov, Nail; Vassilevich, Dmitri

2018-04-01

In this paper we critically reconsider the Casimir repulsion between surfaces that carry the Chern-Simons interaction (corresponding to the Hall-type conductivity). We present a derivation of the Lifshitz formula valid for arbitrary planar geometries and discuss its properties. This analysis allows us to resolve some contradictions in the previous literature. We compute the Casimir energy for two surfaces that have constant longitudinal and Hall conductivities. The repulsion is possible only if both surfaces have Hall conductivities of the same sign. However, there is a critical value of the longitudinal conductivity above which the repulsion disappears. We also consider a model where both parity odd and parity even terms in the conductivity are produced by the polarization tensor of surface modes. In contrast to the previous publications [L. Chen and S.-L. Wan, Phys. Rev. B 84, 075149 (2011), 10.1103/PhysRevB.84.075149; Phys. Rev. B 85, 115102 (2012), 10.1103/PhysRevB.85.115102], we include the parity anomaly term. This term ensures that the conductivities vanish for infinitely massive surface modes. We find that at least for a single mode, regardless of the sign and value of its mass, there is no Casimir repulsion.

Drude Conductivity of Dirac Fermions in Graphene

DTIC Science & Technology

2010-01-01

interband transitions, as required by the sum rule. Our surprising observation indicates that many-body effects and Dirac fermion-impurity interactions...reduction of free electron oscillator strength is corroborated by corresponding changes in graphene interband transitions, as required by the sum...dimensions. Researchers have demonstrated in graphene exotic Dirac fermion phenomena ranging from anomalous quantum Hall effects 1,2 to Klein tunneling 3 in

Spontaneous Hall effect in a chiral p-wave superconductor

NASA Astrophysics Data System (ADS)

Furusaki, Akira; Matsumoto, Masashige; Sigrist, Manfred

2001-08-01

In a chiral superconductor with broken time-reversal symmetry a ``spontaneous Hall effect'' may be observed. We analyze this phenomenon by taking into account the surface properties of a chiral superconductor. We identify two main contributions to the spontaneous Hall effect. One contribution originates from the Bernoulli (or Lorentz) force due to spontaneous currents running along the surfaces of the superconductor. The other contribution has a topological origin and is related to the intrinsic angular momentum of Cooper pairs. The latter can be described in terms of a Chern-Simons-like term in the low-energy field theory of the superconductor and has some similarities with the quantum Hall effect. The spontaneous Hall effect in a chiral superconductor is, however, nonuniversal. Our analysis is based on three approaches to the problem: a self-consistent solution of the Bogoliubov-de Gennes equation, a generalized Ginzburg-Landau theory, and a hydrodynamic formulation. All three methods consistently lead to the same conclusion that the spontaneous Hall resistance of a two-dimensional superconducting Hall bar is of order h/(ekFλ)2, where kF is the Fermi wave vector and λ is the London penetration depth; the Hall resistance is substantially suppressed from a quantum unit of resistance. Experimental issues in measuring this effect are briefly discussed.

Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

PubMed

Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

2016-05-17

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

An Orientation Measurement Method Based on Hall-effect Sensors for Permanent Magnet Spherical Actuators with 3D Magnet Array

PubMed Central

Yan, Liang; Zhu, Bo; Jiao, Zongxia; Chen, Chin-Yin; Chen, I-Ming

2014-01-01

An orientation measurement method based on Hall-effect sensors is proposed for permanent magnet (PM) spherical actuators with three-dimensional (3D) magnet array. As there is no contact between the measurement system and the rotor, this method could effectively avoid friction torque and additional inertial moment existing in conventional approaches. Curved surface fitting method based on exponential approximation is proposed to formulate the magnetic field distribution in 3D space. The comparison with conventional modeling method shows that it helps to improve the model accuracy. The Hall-effect sensors are distributed around the rotor with PM poles to detect the flux density at different points, and thus the rotor orientation can be computed from the measured results and analytical models. Experiments have been conducted on the developed research prototype of the spherical actuator to validate the accuracy of the analytical equations relating the rotor orientation and the value of magnetic flux density. The experimental results show that the proposed method can measure the rotor orientation precisely, and the measurement accuracy could be improved by the novel 3D magnet array. The study result could be used for real-time motion control of PM spherical actuators. PMID:25342000

The Other Hall Effect: College Board Physics

ERIC Educational Resources Information Center

Sheppard, Keith; Gunning, Amanda M.

2013-01-01

Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance…

Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region

NASA Astrophysics Data System (ADS)

Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki; Watanabe, Hiroshi; Kita, Koji; Yamakawa, Satoshi

2018-04-01

The Hall effect mobility (μHall) of the Si-face 4H-SiC metal–oxide–semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The μHall in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in μHall in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the μHall in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region.

Electrical transport properties in Co nanocluster-assembled granular film

NASA Astrophysics Data System (ADS)

Zhang, Qin-Fu; Wang, Lai-Sen; Wang, Xiong-Zhi; Zheng, Hong-Fei; Liu, Xiang; Xie, Jia; Qiu, Yu-Long; Chen, Yuanzhi; Peng, Dong-Liang

2017-03-01

A Co nanocluster-assembled granular film with three-dimensional cross-connection paralleled conductive paths was fabricated by using the plasma-gas-condensation method in a vacuum environment. The temperature-dependent longitudinal resistivity and anomalous Hall effect of this new type granular film were systematically studied. The longitudinal resistivity of the Co nanocluster-assembled granular film first decreased and then increased with increasing measuring temperature, revealing a minimum value at certain temperature, T min . In a low temperature region ( T < T min ), the barrier between adjacent nanoclusters governed the electrical transport process, and the temperature coefficient of resistance (TCR) showed an insulator-type behavior. The thermal fluctuation-induced tunneling conduction progressively increased with increasing temperature, which led to a decrease in the longitudinal resistivity. In a high temperature region, the TCR showed a metallic-type behavior, which was primarily attributed to the temperature-dependent scattering. Different from the longitudinal resistivity behavior, the saturated anomalous Hall resistivity increased monotonically with increasing measuring temperature. The value of the anomalous Hall coefficient ( R S ) reached 2.3 × 10-9 (Ω cm)/G at 300 K, which was about three orders of magnitude larger than previously reported in blocky single-crystal Co [E. N. Kondorskii, Sov. Phys. JETP 38, 977 (1974)]. Interestingly, the scaling relation ( ρx y A ∝ ρx x γ ) between saturated anomalous Hall resistivity ( ρx y A ) and longitudinal resistivity ( ρ x x ) was divided into two regions by T min . However, after excluding the contribution of tunneling, the scaling relation followed the same rule. The corresponding physical mechanism was also proposed to explain these phenomena.

Probing the thermal Hall effect using miniature capacitive strontium titanate thermometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tinsman, Colin; Li, Gang; Asaba, Tomoya

2016-06-27

The thermal Hall effect is the thermal analog of the electrical Hall effect. Rarely observed in normal metals, thermal Hall signals have been argued to be a key property for a number of strongly correlated materials, such as high temperature superconductors, correlated topological insulators, and quantum magnets. The observation of the thermal Hall effect requires precise measurement of temperature in intense magnetic fields. Particularly at low temperature, resistive thermometers have a strong dependence on field, which makes them unsuitable for this purpose. We have created capacitive thermometers which instead measure the dielectric constant of strontium titanate (SrTiO{sub 3}). SrTiO{sub 3}more » approaches a ferroelectric transition, causing its dielectric constant to increase by a few orders of magnitude at low temperature. As a result, these thermometers are very sensitive at low temperature while having very little dependence on the applied magnetic field, making them ideal for thermal Hall measurements. We demonstrate this method by making measurements of the thermal Hall effect in Bismuth in magnetic fields of up to 10 T.« less

Magnet/Hall-Effect Random-Access Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

Specific features of electron scattering in uniaxially deformed n-Ge single crystals in the presence of radiation defects

NASA Astrophysics Data System (ADS)

Luniov, S. V.; Zimych, A. I.; Nazarchuk, P. F.; Maslyuk, V. T.; Megela, I. G.

2016-12-01

Temperature dependencies for concentration of electrons and the Hall mobility for unirradiated and irradiated by the flow of electrons ? single crystals ?, with the energy of ?, for different values of uniaxial pressures along the crystallographic directions ?, ? and ? are obtained on the basis of piezo-Hall effect measurements. Non-typical growth of the Hall mobility of electrons for irradiated single crystals ? in comparison with unirradiated with the increasing of value of uniaxial pressures along the crystallographic directions ? (for the entire range of the investigated temperatures) and ? (to temperatures ?) has been revealed. Such an effect of the Hall mobility increase for uniaxially deformed single crystals ? is explained by the reduction of gradients of a resistance as a result of reduction in the amplitude of a large-scale potential with deformation and concentration of charged A-centers in the process of their recharge by the increasing of uniaxial pressure and consequently the probability of scattering on these centers. Theoretical calculations for temperature dependencies of the Hall mobility for uniaxially deformed single crystals ? in terms of the electrons scattering on the ions of shallow donors, acoustic, optical and intervalley phonons, regions of disordering and large-scale potential is good conformed to the corresponding experimental results at temperatures T<220 K for the case of uniaxial pressures along the crystallographic directions ? and ? and for temperatures ? when the uniaxial pressure is directed along the crystallographic directions ?. The mechanism of electron scattering on a charged radiation defects (which correspond to the deep energy levels of A-centers) 'is turned off' for the given temperatures due to the uniaxial pressure. Reduction of the Hall mobility in transition through a maximum of dependence ? with the increasing temperature for cases of the uniaxial deformation of the irradiated single crystals ? along the crystallographic directions ? and ? is explained by the deforming redistribution of electrons between the minima of conduction band of germanium with different mobility.

Experimental transport studies of yttrium barium copper oxide and lambda-DNA

NASA Astrophysics Data System (ADS)

Zhang, Yuexing

This dissertation consists of two parts. In Part I, we focus on the quasi-particle transport properties in the high temperature superconductor YBa2Cu3O7-delta (YBCO), probed by the thermal Hall conductivity (kappa xy). The thermal Hall conductivity selectively reflects the transport behaviors of the charge carriers. By measuring kappaxy in the normal state YBCO, we established a new method to determine the Wiedemann-Franz (WF) ratio in cuprates. We determined the Hall-channel WF ratio kappa xy/sigmaxyT in Cu and YBCO. In the latter, we uncovered a T-linear dependence and suppression of the Hallchannel WF ratio. The suppression of the Hall-channel WF ratio in systems with predominant electron-electron scattering will be discussed. Thermal transport behaviors of the quasi-particles in the mixed state were studied by measuring kappaxx and kappa xy in a high-purity YBCO crystal. From the field-dependence of the thermal conductivity kappaxx, we separated the quasi particle contribution (kappae) from the phonon background. In the Hall channel, we observed that the (weak-field) kappa xy increased 103-fold between T c (90 K) and 30 K, implying a 100-fold enhancement of the quasi-particle lifetime. We found that kappaxy exhibited a specific scaling behavior below ˜30 K. The implication of the scaling behavior will be discussed. In Part II, we describe an experiment on determining the electrical conductivity of the bacteriophage lambda-DNA, an issue currently under intense debate. We covalently bonded the DNA to Au electrodes by incorporating thiol modified dTTP into the 'sticky' ends of the lambda-DNA. Two-probe measurements on such molecules provided a lower bound for the resistivity rho > 10 6 mum at bias potentials up to 20 V, in conflict with recent claims of moderate to high conductivity. We stress the importance of eliminating salt residues in these measurements.

Distribution of Chern number by Landau level broadening in Hofstadter butterfly

NASA Astrophysics Data System (ADS)

Yoshioka, Nobuyuki; Matsuura, Hiroyasu; Ogata, Masao

2015-04-01

We discuss the relationship between the quantum Hall conductance and a fractal energy band structure, Hofstadter butterfly, on a square lattice under a magnetic field. At first, we calculate the Hall conductance of Hofstadter butterfly on the basis of the linear responce theory. By classifying the bands into some groups with a help of continued fraction expansion, we find that the conductance at the band gaps between the groups accord with the denominators of fractions obtained by aborting the expansion halfway. The broadening of Landau levels is given as an account of this correspondance.

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Wang, Ke; Harzheim, Achim; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip

In the quantum Hall (QH) regime, ballistic conducting paths along the physical edges of a sample appear, leading to quantized Hall conductance and vanishing longitudinal magnetoconductance. These QH edge states are often described as ballistic compressible strips separated by insulating incompressible strips, the spatial profiles of which can be crucial in understanding the stability and emergence of interaction driven QH states. In this work, we present tunneling transport between two QH edge states in bilayer graphene. Employing locally gated device structure, we guide and control the separation between the QH edge states in bilayer graphene. Using resonant Landau level tunneling as a spectroscopy tool, we measure the energy gap in bilayer graphene as a function of displacement field and probe the emergence and evolution of incompressible strips.

Does providing nutrition information at vending machines reduce calories per item sold?

PubMed

Dingman, Deirdre A; Schulz, Mark R; Wyrick, David L; Bibeau, Daniel L; Gupta, Sat N

2015-02-01

In 2010, the United States (US) enacted a restaurant menu labeling law. The law also applied to vending machine companies selling food. Research suggested that providing nutrition information on menus in restaurants might reduce the number of calories purchased. We tested the effect of providing nutrition information and 'healthy' designations to consumers where vending machines were located in college residence halls. We conducted our study at one university in Southeast US (October-November 2012). We randomly assigned 18 vending machines locations (residence halls) to an intervention or control group. For the intervention we posted nutrition information, interpretive signage, and sent a promotional email to residents of the hall. For the control group we did nothing. We tracked sales over 4 weeks before and 4 weeks after we introduced the intervention. Our intervention did not change what the residents bought. We recommend additional research about providing nutrition information where vending machines are located, including testing formats used to present information.

Resonant Hall effect under generation of a self-sustaining mode of spin current in nonmagnetic bipolar conductors with identical characters between holes and electrons

NASA Astrophysics Data System (ADS)

Sakai, Masamichi; Takao, Hiraku; Matsunaga, Tomoyoshi; Nishimagi, Makoto; Iizasa, Keitaro; Sakuraba, Takahito; Higuchi, Koji; Kitajima, Akira; Hasegawa, Shigehiko; Nakamura, Osamu; Kurokawa, Yuichiro; Awano, Hiroyuki

2018-03-01

We have proposed an enhancement mechanism of the Hall effect, the signal of which is amplified due to the generation of a sustaining mode of spin current. Our analytic derivations of the Hall resistivity revealed the conditions indispensable for the observation of the effect: (i) the presence of the transverse component of an effective electric field due to spin splitting in chemical potential in addition to the longitudinal component; (ii) the simultaneous presence of holes and electrons each having approximately the same characteristics; (iii) spin-polarized current injection from magnetized electrodes; (iv) the boundary condition for the transverse current (J c, y = 0). The model proposed in this study was experimentally verified by using van der Pauw-type Hall devices consisting of the nonmagnetic bipolar conductor YH x (x ≃ 2) and TbFeCo electrodes. Replacing Au electrodes with TbFeCo electrodes alters the Hall resistivity from the ordinary Hall effect to the anomalous Hall-like effect with an enhancement factor of approximately 50 at 4 T. We interpreted the enhancement phenomenon in terms of the present model.

Hall effect in a moving liquid

NASA Astrophysics Data System (ADS)

Di Lieto, Alberto; Giuliano, Alessia; Maccarrone, Francesco; Paffuti, Giampiero

2012-01-01

A simple experiment, suitable for performing in an undergraduate physics laboratory, illustrates electromagnetic induction through the water entering into a cylindrical rubber tube by detecting the voltage developed across the tube in the direction transverse both to the flow velocity and to the magnetic field. The apparatus is a very simple example of an electromagnetic flowmeter, a device which is commonly used both in industrial and physiological techniques. The phenomenology observed is similar to that of the Hall effect in the absence of an electric current in the direction of motion of the carriers. The experimental results show a dependence on the intensity of the magnetic field and on the carrier velocity, in good agreement with the theory. Discussion of the system, based on classical electromagnetism, indicates that the effect depends only on the flow rate, and is independent both of the velocity profile and of the electrical conductivity of the medium.

Hall effect of copper nitride thin films

NASA Astrophysics Data System (ADS)

Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

2005-08-01

The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

Surface charge conductivity of a topological insulator in a magnetic field: The effect of hexagonal warping

NASA Astrophysics Data System (ADS)

Akzyanov, R. S.; Rakhmanov, A. L.

2018-02-01

We investigate the influence of hexagonal warping on the transport properties of topological insulators. We study the charge conductivity within Kubo formalism in the first Born approximation using low-energy expansion of the Hamiltonian near the Dirac point. The effects of disorder, magnetic field, and chemical-potential value are analyzed in detail. We find that the presence of hexagonal warping significantly affects the conductivity of the topological insulator. In particular, it gives rise to the growth of the longitudinal conductivity with the increase of the disorder and anisotropic anomalous in-plane magnetoresistance. Hexagonal warping also affects the quantum anomalous Hall effect and anomalous out-of-plane magnetoresistance. The obtained results are consistent with the experimental data.

Topological Hall and Spin Hall Effects in Disordered Skyrmionic Textures

NASA Astrophysics Data System (ADS)

Ndiaye, Papa Birame; Akosa, Collins; Manchon, Aurelien; Spintronics Theory Group Team

We carry out a throughout study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and found that the adiabatic approximation still holds for large skyrmions as well as for few atomic size-nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that topological Hall effect is highly sensitive to momentum scattering. This work was supported by the King Abdullah University of Science and Technology (KAUST) through the Award No OSR-CRG URF/1/1693-01 from the Office of Sponsored Research (OSR).

Anesthetic effect of 4-styrylpyridine on lamprey and fish

USGS Publications Warehouse

Howell, John H.; Thomas, Paul M.

1964-01-01

The anestheticp roperty of 4-styrylpyridine (4-SP) on fish and lamprey was first noticed during chemical screening search of a selective toxicant for larval lamprey (Applegate, Howell, Hall, and Smith, 1957). To assess the possible value of the compound as an anesthetic, we later conducted the experiments reviewed in this report.

Hydrogen passivation of polycrystalline silicon thin films

NASA Astrophysics Data System (ADS)

Scheller, L.-P.; Weizman, M.; Simon, P.; Fehr, M.; Nickel, N. H.

2012-09-01

The influence of post-hydrogenation on the electrical and optical properties of solid phase crystallized polycrystalline silicon (poly-Si) was examined. The passivation of grain-boundary defects was measured as a function of the passivation time. The silicon dangling-bond concentration decreases with increasing passivation time due to the formation of Si-H complexes. In addition, large H-stabilized platelet-like clusters are generated. The influence of H on the electrical properties was investigated using temperature dependent conductivity and Hall-effect measurements. For poly-Si on Corning glass, the dark conductivity decreases upon hydrogenation, while it increases when the samples are fabricated on silicon-nitride covered Borofloat glass. Hall-effect measurements reveal that for poly-Si on Corning glass the hole concentration and the mobility decrease upon post-hydrogenation, while a pronounced increase is observed for poly-Si on silicon-nitride covered Borofloat glass. This indicates the formation of localized states in the band gap, which is supported by sub band-gap absorption measurments. The results are discussed in terms of hydrogen-induced defect passivation and generation mechanisms.

RHETT2/EPDM Hall Thruster Propulsion System Electromagnetic Compatibility Evaluation

NASA Technical Reports Server (NTRS)

Sarmiento, Charles J.; Sankovic, John M.; Freitas, Joseph; Lynn, Peter R.

1997-01-01

Electromagnetic compatibility measurements were obtained as part of the Electric Propulsion Demonstration Module (EPDM) flight qualification program. Tests were conducted on a Hall thruster system operating at a nominal 66O W discharge power. Measurements of conducted and radiated susceptibility and emissions were obtained and referenced to MEL-STD-461 C. The power processor showed some conducted susceptibility below 4 kHz for the magnet current and discharge voltage. Radiated susceptibility testing yielded a null result. Conducted emissions showed slight violations of the specified limit for MIL-461C CE03. Radiated emissions exceeded the RE02 standard at low frequencies, below 300 MHz, by up to 40 dB RV/m/MHz.

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

NASA Astrophysics Data System (ADS)

Gunning, Brendan; Lowder, Jonathan; Moseley, Michael; Alan Doolittle, W.

2012-08-01

Highly p-type GaN films with hole concentrations exceeding 6 × 1019 cm-3 grown by metal-modulated epitaxy are electrically characterized. Temperature-dependent Hall effect measurements at cryogenic temperatures reveal minimal carrier freeze-out in highly doped samples, while less heavily doped samples exhibited high resistivity and donor-compensated conductivity as is traditionally observed. Effective activation energies as low as 43 meV were extracted, and a maximum Mg activation efficiency of 52% was found. In addition, the effective activation energy was found to be negatively correlated to the hole concentration. These results indicate the onset of the Mott-Insulator transition leading to impurity band conduction.

First demonstration of HF-driven ionospheric currents

NASA Astrophysics Data System (ADS)

Papadopoulos, K.; Chang, C.-L.; Labenski, J.; Wallace, T.

2011-10-01

The first experimental demonstration of HF driven currents in the ionosphere at low ELF/ULF frequencies without relying in the presence of electrojets is presented. The effect was predicted by theoretical/computational means in a recent letter and given the name Ionospheric Current Drive (ICD). The effect relies on modulated F-region HF heating to generate Magneto-Sonic (MS) waves that drive Hall currents when they reach the E-region. The Hall currents inject ELF waves into the Earth-Ionosphere waveguide and helicon and Shear Alfven (SA) waves in the magnetosphere. The proof-of-concept experiments were conducted using the HAARP heater in Alaska under the BRIOCHE program. Waves between 0.1-70 Hz were measured at both near and far sites. The letter discusses the differences between ICD generated waves and those relying on modulation of electrojets.

Non-Fermi-liquid and topological states with strong spin-orbit coupling.

PubMed

Moon, Eun-Gook; Xu, Cenke; Kim, Yong Baek; Balents, Leon

2013-11-15

We argue that a class of strongly spin-orbit-coupled materials, including some pyrochlore iridates and the inverted band gap semiconductor HgTe, may be described by a minimal model consisting of the Luttinger Hamiltonian supplemented by Coulomb interactions, a problem studied by Abrikosov and collaborators. It contains twofold degenerate conduction and valence bands touching quadratically at the zone center. Using modern renormalization group methods, we update and extend Abrikosov's classic work and show that interactions induce a quantum critical non-Fermi-liquid phase, stable provided time-reversal and cubic symmetries are maintained. We determine the universal power-law exponents describing various observables in this Luttinger-Abrikosov-Beneslavskii state, which include conductivity, specific heat, nonlinear susceptibility, and the magnetic Gruneisen number. Furthermore, we determine the phase diagram in the presence of cubic and/or time-reversal symmetry breaking perturbations, which includes a topological insulator and Weyl semimetal phases. Many of these phases possess an extraordinarily large anomalous Hall effect, with the Hall conductivity scaling sublinearly with magnetization σ(xy)∼M0.51.

General response formula and application to topological insulator in quantum open system.

PubMed

Shen, H Z; Qin, M; Shao, X Q; Yi, X X

2015-11-01

It is well-known that the quantum linear response theory is based on the first-order perturbation theory for a system in thermal equilibrium. Hence, this theory breaks down when the system is in a steady state far from thermal equilibrium and the response up to higher order in perturbation is not negligible. In this paper, we develop a nonlinear response theory for such quantum open system. We first formulate this theory in terms of general susceptibility, after which we apply it to the derivation of Hall conductance for open system at finite temperature. As an example, the Hall conductance of the two-band model is derived. Then we calculate the Hall conductance for a two-dimensional ferromagnetic electron gas and a two-dimensional lattice model. The calculations show that the transition points of topological phase are robust against the environment. Our results provide a promising platform for the coherent manipulation of the nonlinear response in quantum open system, which has potential applications for quantum information processing and statistical physics.

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1995-01-01

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Electrical manipulation of edge states in graphene and the effect on quantum Hall transport

NASA Astrophysics Data System (ADS)

Ostahie, B.; NiÅ£ǎ, M.; Aldea, A.

2015-04-01

We investigate the properties of Dirac electrons in a finite graphene sample under a perpendicular magnetic field that emerge when an in-plane electric bias is also applied. The numerical analysis of the Hofstadter spectrum and of the edge-type wave functions evidence the presence of shortcut edge states that appear under the influence of the electric field. The states are characterized by a specific spatial distribution, which follows only partially the perimeter, and exhibit ridges that connect opposite sides of the graphene plaquette. Two kinds of such states have been found in different regions of the spectrum, and their particular spatial localization is shown along with the diamagnetic moments that reveal their chirality. By simulating a four-lead Hall device, we investigate the transport properties and observe unconventional plateaus of the integer quantum Hall effect that are associated with the presence of the shortcut edge states. We show the contributions of the novel states to the conductance matrix that determine the new transport properties. The shortcut edge states resulting from the splitting of the n =0 Landau level represent a special case, giving rise to nontrivial transverse and longitudinal resistance.

Hall Thruster Thermal Modeling and Test Data Correlation

NASA Technical Reports Server (NTRS)

Myers, James

2016-01-01

HERMeS - Hall Effect Rocket with Magnetic Shielding. Developed through a joint effort by NASA/GRC and the Jet Propulsion Laboratory (JPL). Design goals: High power (12.5 kW) high Isp (3000 sec), high efficiency (> 60%), high throughput (10,000 kg), reduced plasma erosion and increased life (5 yrs) to support Asteroid Redirect Robotic Mission (ARRM). Further details see "Performance, Facility Pressure Effects and Stability Characterization Tests of NASAs HERMeS Thruster" by H. Kamhawi and team. Hall Thrusters (HT) inherently operate at elevated temperatures approx. 600 C (or more). Due to electric magnetic (E x B) fields used to ionize and accelerate propellant gas particles (i.e., plasma). Cooling is largely limited to radiation in vacuum environment.Thus the hardware components must withstand large start-up delta-T's. HT's are constructed of multiple materials; assorted metals, non-metals and ceramics for their required electrical and magnetic properties. To mitigate thermal stresses HT design must accommodate the differential thermal growth from a wide range of material Coef. of Thermal Expansion (CTEs). Prohibiting the use of some bolted/torqued interfaces.Commonly use spring loaded interfaces, particularly at the metal-to-ceramic interfaces to allow for slippage.However most component interfaces must also effectively conduct heat to the external surfaces for dissipation by radiation.Thus contact pressure and area are important.

Electronic transport in the quantum spin Hall state due to the presence of adatoms in graphene

NASA Astrophysics Data System (ADS)

Lima, Leandro; Lewenkopf, Caio

Heavy adatoms, even at low concentrations, are predicted to turn a graphene sheet into a topological insulator with substantial gap. The adatoms mediate the spin-orbit coupling that is fundamental to the quantum spin Hall effect. The adatoms act as local spin-orbit scatterer inducing hopping processes between distant carbon atoms giving origin to transverse spin currents. Although there are effective models that describe spectral properties of such systems with great detail, quantitative theoretical work for the transport counterpart is still lacking. We developed a multiprobe recursive Green's function technique with spin resolution to analyze the transport properties for large geometries. We use an effective tight-binding Hamiltonian to describe the problem of adatoms randomly placed at the center of the honeycomb hexagons, which is the case for most transition metals. Our choice of current and voltage probes is favorable to experiments since it filters the contribution of only one spin orientation, leading to a quantized spin Hall conductance of e2 / h . We also discuss the electronic propagation in the system by imaging the local density of states and the electronic current densities. The authors acknowledge the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Order effects in research on paranormal belief.

PubMed

Dudley, R Thomas

2002-04-01

Measures of paranormal belief and emotional intelligence were given a group of 72 college students using Tobacyk's Revised Paranormal Belief Scale and Schutte, Malouff, Hall, Haggerty, Cooper, Golden, and Dornheim's Emotional Intelligence Scale. Order effects indicated that participants who took the Paranormal Belief Scale first had lower emotional intelligence scores than those who took the Emotional Intelligence Scale first. The study demonstrates the importance of taking order effects into account when conducting research on paranormal belief.

Defect control of conventional and anomalous electron transport at complex oxide interfaces

DOE PAGES

Gunkel, F.; Bell, Chris; Inoue, Hisashi; ...

2016-08-30

Using low-temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO 3/SrTiO 3 (100) interfaces. Field-dependent Hall characteristics (2–300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10 K. Considering these two sources of nonlinearity, we suggest a phenomenological modelmore » capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. In conclusion, the most pronounced AHE is found at increased growth pressure and, thus, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration.« less

The Physical Electronics of Graphene on Germanium

NASA Astrophysics Data System (ADS)

Rojas Delgado, Richard

The properties of graphene make it an outstanding candidate for electronic-device applications, especially those that require no band gap but a high conductance. The conductance, involving both carrier mobility and carrier concentration, will depend critically on the substrate to which graphene is transferred. I demonstrate an exceptionally high conductance in graphene transferred to Ge(001) and provide an understanding of the mechanism. Essential in this understanding is an interfacial chemistry consisting of Ge oxide and suboxide layers that provide the necessary charges to dope the graphene sheet, and whose chemical behavior is such that one can obtain long-term stability in the conductance. In contrast, when high-quality graphene is grown directly on Ge (100), (111), or (110), the conductance is unexceptional, but oxidation of the surface is significantly delayed and slowed, relative to both clean Ge and Ge with graphene transferred to its surface. [2,3] I fabricate Hall bars in graphene transferred to Ge(001) and graphene grown on Ge(001) using atmospheric-pressure chemical vapor deposition (CVD) with methane precursors, and measure the sheet resistance and Hall effect from 300K to 10K. Values of mobility and carrier concentration are extracted. I obtain the highest combination of mobility and carrier concentration yet reported in graphene (suspended or supported) for temperatures from 10 to 300K. The implication is that the primary mechanisms for scattering charge in the graphene, roughness and a non-uniform electrostatic potential due to fixed charges, have limited effect when the substrate is oxidized Ge.

Evidence for phonon skew scattering in the spin Hall effect of platinum

NASA Astrophysics Data System (ADS)

Karnad, G. V.; Gorini, C.; Lee, K.; Schulz, T.; Lo Conte, R.; Wells, A. W. J.; Han, D.-S.; Shahbazi, K.; Kim, J.-S.; Moore, T. A.; Swagten, H. J. M.; Eckern, U.; Raimondi, R.; Kläui, M.

2018-03-01

We measure and analyze the effective spin Hall angle of platinum in the low-residual resistivity regime by second-harmonic measurements of the spin-orbit torques for a multilayer of Pt |Co | AlOx . An angular-dependent study of the torques allows us to extract the effective spin Hall angle responsible for the damping-like torque in the system. We observe a strikingly nonmonotonic and reproducible temperature dependence of the torques. This behavior is compatible with recent theoretical predictions which include both intrinsic and extrinsic (impurities and phonons) contributions to the spin Hall effect at finite temperatures.

Faraday Probe Analysis, Part 2: Evaluation of Facility Effects on Ion Migration in a Hall Thruster Plume (Preprint)

DTIC Science & Technology

2010-02-24

A nested Faraday probe was designed and fabricated to assess facility effects in a systematic study of ion migration in a Hall thruster plume...Current density distributions were studied at 8, 12, 16, and 20 thruster diameters downstream of the Hall thruster exit plane with four probe configurations...measurements are a significant improvement for comparisons with numerical simulations and investigations of Hall thruster performance.

A Survey of Undergraduate Student Perceptions and Use of Nutrition Information Labels in a University Dining Hall

ERIC Educational Resources Information Center

Martinez, Olivia D.; Roberto, Christina A.; Kim, Jane H.; Schwartz, Marlene B.; Brownell, Kelly D.

2013-01-01

Objective: To examine undergraduate student perceptions and reported use of nutrition information labels in campus dining halls.Design: Paper surveys were administered to a convenience sample of undergraduates. Setting: This study was conducted at an urban United States university. Method: A survey about perceptions and use of nutrition…

Transient photoresponse in amorphous In-Ga-Zn-O thin films under stretched exponential analysis

NASA Astrophysics Data System (ADS)

Luo, Jiajun; Adler, Alexander U.; Mason, Thomas O.; Bruce Buchholz, D.; Chang, R. P. H.; Grayson, M.

2013-04-01

We investigated transient photoresponse and Hall effect in amorphous In-Ga-Zn-O thin films and observed a stretched exponential response which allows characterization of the activation energy spectrum with only three fit parameters. Measurements of as-grown films and 350 K annealed films were conducted at room temperature by recording conductivity, carrier density, and mobility over day-long time scales, both under illumination and in the dark. Hall measurements verify approximately constant mobility, even as the photoinduced carrier density changes by orders of magnitude. The transient photoconductivity data fit well to a stretched exponential during both illumination and dark relaxation, but with slower response in the dark. The inverse Laplace transforms of these stretched exponentials yield the density of activation energies responsible for transient photoconductivity. An empirical equation is introduced, which determines the linewidth of the activation energy band from the stretched exponential parameter β. Dry annealing at 350 K is observed to slow the transient photoresponse.

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method

NASA Astrophysics Data System (ADS)

Chidambaram, Thenappan

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

Spin Hall Effects in Metallic Antiferromagnets

DOE PAGES

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; ...

2014-11-04

In this paper, we investigate four CuAu-I-type metallic antiferromagnets for their potential as spin current detectors using spin pumping and inverse spin Hall effect. Nontrivial spin Hall effects were observed for FeMn, PdMn, and IrMn while a much higher effect was obtained for PtMn. Using thickness-dependent measurements, we determined the spin diffusion lengths of these materials to be short, on the order of 1 nm. The estimated spin Hall angles of the four materials follow the relationship PtMn > IrMn > PdMn > FeMn, highlighting the correlation between the spin-orbit coupling of nonmagnetic species and the magnitude of the spinmore » Hall effect in their antiferromagnetic alloys. These experiments are compared with first-principles calculations. Finally, engineering the properties of the antiferromagnets as well as their interfaces can pave the way for manipulation of the spin dependent transport properties in antiferromagnet-based spintronics.« less

Quantum transport in antidot arrays in magnetic fields

NASA Astrophysics Data System (ADS)

Ishizaka, Satoshi; Nihey, Fumiyuki; Nakamura, Kazuo; Sone, Jun' Ichi; Ando, Tsuneya

1995-04-01

Transport in antidot arrays in magnetic fields is studied numerically. We calculate the density of states and conductivity tensor by the self-consistent Born approximation. Although peak positions of the density of states agree well with the quantization condition for several short periodic orbits, the behavior of the conductivity tensor is very complicated. Coupling among the periodic orbits causes an oscillation in the Hall conductivity in magnetic fields around the localized peak. In low magnetic fields, the skipping orbit, which runs from an antidot to its neighboring antidot, plays a crucial role for diagonal conductivity, and its coupling with the periodic orbits causes an oscillation in the diagonal conductivity. The resulting magnetoresistance oscillates with a period near one magnetic flux quantum as observed in recent experiments. Furthermore, the oscillation due to the manifestation of Hofstadter's butterfly is present in both the diagonal conductivity and the Hall conductivity.

The Effects of a Geomagnetic Storm on Thermospheric Circulation.

DTIC Science & Technology

1987-01-01

frequency. .*. p air density. olU 2 Pedersen and Hall conductivities. a P height intergrated Pedersen conductivity. horizontal viscous stress. * east...equations need to be ex- ,n~panded upon. The energy density is: (.2 1 + V2). I~i~iCPT +<V 2 . The horizontal viscous stress, including molecular and...with Z=0 at 80 km and Z=14.4 at 450 km for a total of 49 levels each 0.3 of a scale height apart. Also, the horizontal wind velocity, gas energy

Impurity-generated non-Abelions

NASA Astrophysics Data System (ADS)

Simion, G.; Kazakov, A.; Rokhinson, L. P.; Wojtowicz, T.; Lyanda-Geller, Y. B.

2018-06-01

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an s -wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an s superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by characteristic disorder, gate voltage induced angular momentum splitting of impurity levels, and by a proximity superconducting gap. The phase diagram exhibits two ranges of gate voltage with conventional superconducting order separated by a gate voltage range with topological superconductivity. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana fermions. Ferromagnetic transitions in the fractional quantum Hall regime may lead to the formation and electrostatic control of higher order non-Abelian excitations.

Compact High Current Rare-Earth Emitter Hollow Cathode for Hall Effect Thrusters

NASA Technical Reports Server (NTRS)

Goebel, Dan M. (Inventor); Watkins, Ronnie M. (Inventor); Hofer, Richard R. (Inventor)

2012-01-01

An apparatus and method for achieving an efficient central cathode in a Hall effect thruster is disclosed. A hollow insert disposed inside the end of a hollow conductive cathode comprises a rare-earth element and energized to emit electrons from an inner surface. The cathode employs an end opening having an area at least as large as the internal cross sectional area of the rare earth insert to enhance throughput from the cathode end. In addition, the cathode employs a high aspect ratio geometry based on the cathode length to width which mitigates heat transfer from the end. A gas flow through the cathode and insert may be impinged by the emitted electrons to yield a plasma. One or more optional auxiliary gas feeds may also be employed between the cathode and keeper wall and external to the keeper near the outlet.

Carrier density control of magnetism and Berry phases in doped EuTiO3

NASA Astrophysics Data System (ADS)

Ahadi, Kaveh; Gui, Zhigang; Porter, Zach; Lynn, Jeffrey W.; Xu, Zhijun; Wilson, Stephen D.; Janotti, Anderson; Stemmer, Susanne

2018-05-01

In materials with broken time-reversal symmetry, the Berry curvature acts as a reciprocal space magnetic field on the conduction electrons and is a significant contribution to the magnetotransport properties, including the intrinsic anomalous Hall effect. Here, we report neutron diffraction, transport, and magnetization measurements of thin films of doped EuTiO3, an itinerant magnetic material, as a function of carrier density and magnetic field. These films are itinerant antiferromagnets at all doping concentrations. At low carrier densities, the magnetoresistance indicates a metamagnetic transition, which is absent at high carrier densities (>6 × 1020 cm-3). Strikingly, the crossover coincides with a sign change in the spontaneous Hall effects, indicating a sign change in the Berry curvature. We discuss the results in the context of the band structure topology and its coupling to the magnetic texture.

Performance Evaluation of a 50kW Hall Thruster

NASA Technical Reports Server (NTRS)

Jacobson, David T.; Jankovsky, Robert S.

1999-01-01

An experimental investigation was conducted on a laboratory model Hall thruster designed to operate at power levels up to 50 kW. During this investigation the engine's performance was characterized over a range of discharge currents from 10 to 36 A and a range of discharge voltages from 200 to 800 V Operating on the Russian cathode a maximum thrust of 966 mN was measured at 35.6 A and 713.0 V. This corresponded to a specific impulse of 3325 s and an efficiency of 62%. The maximum power the engine was operated at was 25 kW. Additional testing was conducted using a NASA cathode designed for higher current operation. During this testing, thrust over 1 N was measured at 40.2 A and 548.9 V. Several issues related to operation of Hall thrusters at these high powers were encountered.

Useful Pedagogical Applications of the Classical Hall Effect

ERIC Educational Resources Information Center

Houari, Ahmed

2007-01-01

One of the most known phenomena in physics is the Hall effect. This is mainly due to its simplicity and to the wide range of its theoretical and practical applications. To complete the pedagogical utility of the Hall effect in physics teaching, I will apply it here to determine the Faraday constant as a fundamental physical number and the number…

The quantum Hall effects: Philosophical approach

NASA Astrophysics Data System (ADS)

Lederer, P.

2015-05-01

The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.

Higher (odd) dimensional quantum Hall effect and extended dimensional hierarchy

NASA Astrophysics Data System (ADS)

Hasebe, Kazuki

2017-07-01

We demonstrate dimensional ladder of higher dimensional quantum Hall effects by exploiting quantum Hall effects on arbitrary odd dimensional spheres. Non-relativistic and relativistic Landau models are analyzed on S 2 k - 1 in the SO (2 k - 1) monopole background. The total sub-band degeneracy of the odd dimensional lowest Landau level is shown to be equal to the winding number from the base-manifold S 2 k - 1 to the one-dimension higher SO (2 k) gauge group. Based on the chiral Hopf maps, we clarify the underlying quantum Nambu geometry for odd dimensional quantum Hall effect and the resulting quantum geometry is naturally embedded also in one-dimension higher quantum geometry. An origin of such dimensional ladder connecting even and odd dimensional quantum Hall effects is illuminated from a viewpoint of the spectral flow of Atiyah-Patodi-Singer index theorem in differential topology. We also present a BF topological field theory as an effective field theory in which membranes with different dimensions undergo non-trivial linking in odd dimensional space. Finally, an extended version of the dimensional hierarchy for higher dimensional quantum Hall liquids is proposed, and its relationship to quantum anomaly and D-brane physics is discussed.

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

75 FR 7467 - Gary E. Hall and Rita C. Hall; Notice of Application Accepted for Filing With the Commision...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-19

... Intervene and Protests, Ready for Environmental Analysis, Intent To Waive Solicitation of Additional Study... study should be conducted in order to form a factual basis for complete analysis of the application on its merits, the resource agency, Indian tribe, or person must file a request for the study with the...

Optimization of edge state velocity in the integer quantum Hall regime

NASA Astrophysics Data System (ADS)

Sahasrabudhe, H.; Novakovic, B.; Nakamura, J.; Fallahi, S.; Povolotskyi, M.; Klimeck, G.; Rahman, R.; Manfra, M. J.

2018-02-01

Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point contact (QPCs) interferometers having a high edge state velocity is desirable. Here we present a new simulation method for designing heterostructures with high edge state velocity by realistically modeling edge states near QPCs in the integer quantum Hall effect (IQHE) regime. Using this simulation method, we also predict the filling factor at the center of QPCs and their conductance at different gate voltages. The 3D Schrödinger equation is split into 1D and 2D parts. Quasi-1D Schrödinger and Poisson equations are solved self-consistently in the IQHE regime to obtain the potential profile, and quantum transport is used to solve for the edge state wave functions. The velocity of edge states is found to be /B , where is the expectation value of the electric field for the edge state. Anisotropically etched trench gated heterostructures with double-sided delta doping have the highest edge state velocity among the structures considered.

Reconfiguration of NASA GRC's Vacuum Facility 6 for Testing of Advanced Electric Propulsion System (AEPS) Hardware

NASA Technical Reports Server (NTRS)

Peterson, Peter; Kamhawi, Hani; Huang, Wensheng; Yim, John; Haag, Tom; Mackey, Jonathan; McVetta, Mike; Sorrelle, Luke; Tomsik, Tom; Gilligan, Ryan;

Reconfiguration of NASA GRC's Vacuum Facility 6 for Testing of Advanced Electric Propulsion System (AEPS) Hardware

NASA Technical Reports Server (NTRS)

Peterson, Peter Y.; Kamhawi, Hani; Huang, Wensheng; Yim, John; Haag, Tom; Mackey, Jonathan; McVetta, Mike; Sorrelle, Luke; Tomsik, Tom; Gilligan, Ryan;

Reconfiguration of NASA GRC's Vacuum Facility 6 for Testing of Advanced Electric Propulsion System (AEPS) Hardware

NASA Technical Reports Server (NTRS)

Peterson, Peter Y.; Kamhawi, Hani; Huang, Wensheng; Yim, John T.; Haag, Thomas W.; Mackey, Jonathan A.; McVetta, Michael S.; Sorrelle, Luke T.; Tomsik, Thomas M.; Gilligan, Ryan P.;

Integrated Stirling Convertor and Hall Thruster Test Conducted

NASA Technical Reports Server (NTRS)

Mason, Lee S.

2002-01-01

An important aspect of implementing Stirling Radioisotope Generators on future NASA missions is the integration of the generator and controller with potential spacecraft loads. Some recent studies have indicated that the combination of Stirling Radioisotope Generators and electric propulsion devices offer significant trip time and payload fraction benefits for deep space missions. A test was devised to begin to understand the interactions between Stirling generators and electric thrusters. An electrically heated RG- 350 (350-W output) Stirling convertor, designed and built by Stirling Technology Company of Kennewick, Washington, under a NASA Small Business Innovation Research agreement, was coupled to a 300-W SPT-50 Hall-effect thruster built for NASA by the Moscow Aviation Institute (RIAME). The RG-350 and the SPT-50 shown, were installed in adjacent vacuum chamber ports at NASA Glenn Research Center's Electric Propulsion Laboratory, Vacuum Facility 8. The Stirling electrical controller interfaced directly with the Hall thruster power-processing unit, both of which were located outside of the vacuum chamber. The power-processing unit accepted the 48 Vdc output from the Stirling controller and distributed the power to all the loads of the SPT-50, including the magnets, keeper, heater, and discharge. On February 28, 2001, the Glenn test team successfully operated the Hall-effect thruster with the Stirling convertor. This is the world's first known test of a dynamic power source with electric propulsion. The RG-350 successfully managed the transition from the purely resistive load bank within the Stirling controller to the highly capacitive power-processing unit load. At the time of the demonstration, the Stirling convertor was operating at a hot temperature of 530 C and a cold temperature of -6 C. The linear alternator was producing approximately 250 W at 109 Vac, while the power-processing unit was drawing 175 W at 48 Vdc. The majority of power was delivered to the Hall thruster discharge circuit operating at 115 Vdc and 0.9 A. Testing planned for late 2001 will examine the possibility of directly driving the Hall thruster discharge circuit using rectified and filtered output from the Stirling alternator.

Pseudo-Hall Effect in Graphite on Paper Based Four Terminal Devices for Stress Sensing Applications

NASA Astrophysics Data System (ADS)

Qamar, Afzaal; Sarwar, Tuba; Dinh, Toan; Foisal, A. R. M.; Phan, Hoang-Phuong; Viet Dao, Dzung

2017-04-01

A cost effective and easy to fabricate stress sensor based on pseudo-Hall effect in Graphite on Paper (GOP) has been presented in this article. The four terminal devices were developed by pencil drawing with hand on to the paper substrate. The stress was applied to the paper containing four terminal devices with the input current applied at two terminals and the offset voltage observed at other two terminals called pseudo-Hall effect. The GOP stress sensor showed significant response to the applied stress which was smooth and linear. These results showed that the pseudo-Hall effect in GOP based four terminal devices can be used for cost effective, flexible and easy to make stress, strain or force sensors.

An evaluation of krypton propellant in Hall thrusters

NASA Astrophysics Data System (ADS)

Linnell, Jesse Allen

Due to its high specific impulse and low price, krypton has long sparked interest as an alternate Hall thruster propellant. Unfortunately at the moment, krypton's relatively poor performance precludes it as a legitimate option. This thesis presents a detailed investigation into krypton operation in Hall thrusters. These findings suggest that the performance gap can be decreased to 4% and krypton can finally become a realistic propellant option. Although krypton has demonstrated superior specific impulse, the xenon-krypton absolute efficiency gap ranges between 2 and 15%. A phenomenological performance model indicates that the main contributors to the efficiency gap are propellant utilization and beam divergence. Propellant utilization and beam divergence have relative efficiency deficits of 5 and 8%, respectively. A detailed characterization of internal phenomena is conducted to better understand the xenon-krypton efficiency gap. Krypton's large beam divergence is found to be related to a defocusing equipotential structure and a weaker magnetic field topology. Ionization processes are shown to be linked to the Hall current, the magnetic mirror topology, and the perpendicular gradient of the magnetic field. Several thruster design and operational suggestions are made to optimize krypton efficiency. Krypton performance is optimized for discharge voltages above 500 V and flow rates corresponding to an a greater than 0.015 mg/(mm-s), where alpha is a function of flow rate and discharge channel dimensions (alpha = m˙alphab/Ach). Performance can be further improved by increasing channel length or decreasing channel width for a given flow rate. Also, several magnetic field design suggestions are made to enhance ionization and beam focusing. Several findings are presented that improve the understanding of general Hall thruster physics. Excellent agreement is shown between equipotential lines and magnetic field lines. The trim coil is shown to enhance beam focusing, ionization processes, and electron dynamics. Electron mobility and the Hall parameter are studied and compared to different mobility models. Azimuthal electron current is studied using a fluid and particle drift approach. Analyses of several magnetic field features are conducted and simple tools are suggested for the development of future Hall thrusters. These findings have strong implications for future Hall thruster design, lifetimes, and modeling.

Direct observation of the skyrmion Hall effect

DOE PAGES

Jiang, Wanjun; Zhang, Xichao; Yu, Guoqiang; ...

2016-09-19

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultantmore » skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.« less

Spin-Hall effect in the scattering of structured light from plasmonic nanowire.

PubMed

Sharma, Deepak K; Kumar, Vijay; Vasista, Adarsh B; Chaubey, Shailendra K; Kumar, G V Pavan

2018-06-01

Spin-orbit interactions are subwavelength phenomena that can potentially lead to numerous device-related applications in nanophotonics. Here, we report the spin-Hall effect in the forward scattering of Hermite-Gaussian (HG) and Gaussian beams from a plasmonic nanowire. Asymmetric scattered radiation distribution was observed for circularly polarized beams. Asymmetry in the scattered radiation distribution changes the sign when the polarization handedness inverts. We found a significant enhancement in the spin-Hall effect for a HG beam compared to a Gaussian beam for constant input power. The difference between scattered powers perpendicular to the long axis of the plasmonic nanowire was used to quantify the enhancement. In addition, the nodal line of the HG beam acts as the marker for the spin-Hall shift. Numerical calculations corroborate experimental observations and suggest that the spin flow component of the Poynting vector associated with the circular polarization is responsible for the spin-Hall effect and its enhancement.

Spin-Hall effect in the scattering of structured light from plasmonic nanowire

NASA Astrophysics Data System (ADS)

Sharma, Deepak K.; Kumar, Vijay; Vasista, Adarsh B.; Chaubey, Shailendra K.; Kumar, G. V. Pavan

2018-06-01

Spin-orbit interactions are subwavelength phenomena which can potentially lead to numerous device related applications in nanophotonics. Here, we report Spin-Hall effect in the forward scattering of Hermite-Gaussian and Gaussian beams from a plasmonic nanowire. Asymmetric scattered radiation distribution was observed for circularly polarized beams. Asymmetry in the scattered radiation distribution changes the sign when the polarization handedness inverts. We found a significant enhancement in the Spin-Hall effect for Hermite-Gaussian beam as compared to Gaussian beam for constant input power. The difference between scattered powers perpendicular to the long axis of the plasmonic nanowire was used to quantify the enhancement. In addition to it, nodal line of HG beam acts as the marker for the Spin-Hall shift. Numerical calculations corroborate experimental observations and suggest that the Spin flow component of Poynting vector associated with the circular polarization is responsible for the Spin-Hall effect and its enhancement.

Direct observation of the skyrmion Hall effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Wanjun; Zhang, Xichao; Yu, Guoqiang

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultantmore » skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.« less

Hall-effect Thruster Channel Surface Properties Investigation (PREPRINT)

DTIC Science & Technology

2011-03-03

Article 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Hall-effect Thruster Channel Surface Properties Investigation 5b...13. SUPPLEMENTARY NOTES For publication in the AIAA Journal of Propulsion and Power. 14. ABSTRACT Surface properties of Hall-effect thruster...incorporated into thruster simulations, and these models must account for evolution of channel surface properties due to thruster operation. Results from

Extrinsic spin Hall effect in graphene

NASA Astrophysics Data System (ADS)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Effect of cyclical thermal to mechanical properties of Hybrid Laminate Composites (HLC) with skin recycle polypropylene/natural fiber/halloysite and core PP/KF composites

NASA Astrophysics Data System (ADS)

Sri Suharty, Neng; Ismail, Hanafi; Suci Handayani, Desi; Diharjo, Kuncoro; Rachman Wibowo, Fajar; Arnita Wuri, Margaretha

2016-02-01

This research has successfully synthesized six hybrid laminate composites (HLC). These HLC consist of two layers skin composites and one layer of core PP/KF composites. There are sticked with epoxy adhesive by using cold press method. In this research 6 types of skin are used, namely the rPP (recycled polypropylene, HC1); rPP/DVB/PP-g-AA/KF (HC2); rPP/DVB/PP-g-AA/Hall (HC3); rPP/DVB/PP-g-AA/Hall+ZB (HC4); rPP/DVB/PP-g-AA/KF/Hall (HC5) and rPP/DVB/PP-g-AA/KF/Hall+ZB (HC6) composites. The mechanical properties assessment tensile strength (TS) of various HLC before and after cyclical thermal (CT) was done by ASTM D638. While testing the flame retardant: such as time to ignition (TTI) and burning rate (BR) was done by ASTM D635. Heat stability of HLC can be recognized by conducting the CT treatment. It is to determine the effect of fluctuating heat loads on mechanical properties of HLC materials. The TS result of five HLCs (HC2, HC3, HC4, HC5 and HC6) before CT treatment were higher than HC1 (blank HLC). Those five HLC are also able to increase the TTI and reduce the BR compared to HC1. The CT treatment conditions performed at 45 oC as much as 125 times. After CT treatment, the TS values only slightly decline compared to before CT treatment.

Energy structure of MHD flow coupling with outer resistance circuit

NASA Astrophysics Data System (ADS)

Huang, Z. Y.; Liu, Y. J.; Chen, Y. Q.; Peng, Z. L.

2015-08-01

Energy structure of MHD flow coupling with outer resistance circuit is studied to illuminate qualitatively and quantitatively the energy relation of this basic MHD flow system with energy input and output. Energy structure are analytically derived based on the Navier-Stocks equations for two-dimensional fully-developed flow and generalized Ohm's Law. The influences of applied magnetic field, Hall parameter and conductivity on energy structure are discussed based on the analytical results. Associated energies in MHD flow are deduced and validated by energy conservation. These results reveal that energy structure consists of two sub structures: electrical energy structure and internal energy structure. Energy structure and its sub structures provide an integrated theoretical energy path of the MHD system. Applied magnetic field and conductivity decrease the input energy, dissipation by fluid viscosity and internal energy but increase the ratio of electrical energy to input energy, while Hall parameter has the opposite effects. These are caused by their different effects on Bulk velocity, velocity profiles, voltage and current in outer circuit. Understanding energy structure helps MHD application designers to actively adjust the allocation of different parts of energy so that it is more reasonable and desirable.

Hall effects on unsteady MHD oscillatory free convective flow of second grade fluid through porous medium between two vertical plates

NASA Astrophysics Data System (ADS)

VeeraKrishna, M.; Subba Reddy, G.; Chamkha, A. J.

2018-02-01

The effects of radiation and Hall current on an unsteady magnetohydrodynamic free convective flow in a vertical channel filled with a porous medium have been studied. We consider an incompressible viscous and electrically conducting incompressible viscous second grade fluid bounded by a loosely packed porous medium. The fluid is driven by an oscillating pressure gradient parallel to the channel plates, and the entire flow field is subjected to a uniform inclined magnetic field of strength Ho inclined at an angle of inclination α with the normal to the boundaries in the transverse xy-plane. The temperature of one of the plates varies periodically, and the temperature difference of the plates is high enough to induce the radiative heat transfer. The effects of various parameters on the velocity profiles, the skin friction, temperature field, rate of heat transfer in terms of their amplitude, and phase angles are shown graphically.

Kerr effect from diffractive skew scattering in chiral px +/- ipy superconductors

NASA Astrophysics Data System (ADS)

König, Elio; Levchenko, Alex

We calculate the temperature dependent anomalous ac Hall conductance σH (Ω , T) for a two-dimensional chiral p-wave superconductor. This quantity determines the polar Kerr effect, as it was observed in Sr2RuO4. We concentrate on a single band model with arbitrary isotropic dispersion relation subjected to rare, weak impurities treated in the Born approximation. As we explicitly show by detailed computation, previously omitted contributions to extrinsic part of an anomalous Hall response, physically originating from diffractive skew scattering on quantum impurity complexes, appear to the leading order in impurity concentration. By direct comparison with published results from the literature we demonstrate the relevance of our findings for the interpretation of the Kerr effect measurements in superconductors. This work was financially supported in part by NSF Grants No. DMR-1606517 and ECCS-1560732 and at U of Wisconsin by the Office of the Vice Chancellor for Research and Graduate Education with funding from the Wisconsin Alumni Research Foundation.

Large magnetoresistance and Hall effect in paramagnetic black phosphorus synthesized from red phosphorus

NASA Astrophysics Data System (ADS)

Jiang, X. H.; Xiong, F.; Zhang, X. W.; Hua, Z. H.; Wang, Z. H.; Yang, S. G.

2018-05-01

Black phosphorus (BP) is an important material, which can be used in the fabrication of phosphorene. In this manuscript, a systematic study was described on the high-pressure synthesis of BP from red phosphorus. For physical characterization, the bulk BP was synthesized under the high pressure of 1.6 GPa and high temperature of 700 °C for 2 h. X-ray diffraction and Raman studies illustrated the formation of high-quality pure phase pleomorphic BP. A nonlinear Hall effect was observed in the BP sample. Magnetoresistance (MR) in the bulk BP reached 90% at 40 K, and positive-to-negative crossover in MR was measured. A paramagnetic feature was found in the prepared bulk BP, and the MR results were attributed to the combination of the effect of classical resistor network and magnetic polaron. The conduction tensors were analyzed by a two-band model to determine the carrier concentration and mobility at several temperatures.

Ion beam irradiation effect on thermoelectric properties of Bi2Te3 and Sb2Te3 thin films

NASA Astrophysics Data System (ADS)

Fu, Gaosheng; Zuo, Lei; Lian, Jie; Wang, Yongqiang; Chen, Jie; Longtin, Jon; Xiao, Zhigang

2015-09-01

Thermoelectric energy harvesting is a very promising application in nuclear power plants for self-maintained wireless sensors. However, the effects of intensive radiation on the performance of thermoelectric materials under relevant reactor environments such as energetic neutrons are not fully understood. In this work, radiation effects of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric thin film samples prepared by E-beam evaporation are investigated using Ne2+ ion irradiations at different fluences of 5 × 1014, 1015, 5 × 1015 and 1016 ions/cm2 with the focus on the transport and structural properties. Electrical conductivities, Seebeck coefficients and power factors are characterized as ion fluence changes. X-ray diffraction (XRD) and transmission electron microscopy (TEM) of the samples are obtained to assess how phase and microstructure influence the transport properties. Carrier concentration and Hall mobility are obtained from Hall effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. Positive effects of ion irradiations from Ne2+ on thermoelectric material property are observed to increase the power factor to 208% for Bi2Te3 and 337% for Sb2Te3 materials between fluence of 1 and 5 × 1015 cm2, due to the increasing of the electrical conductivity as a result of ionization radiation-enhanced crystallinity. However, under a higher fluence, 5 × 1015 cm2 in this case, the power factor starts to decrease accordingly, limiting the enhancements of thermoelectric materials properties under intensive radiation environment.

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

NASA Astrophysics Data System (ADS)

Tong, Wen-Yi; Duan, Chun-Gang

2017-08-01

In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k.p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.

Separation of electron and hole dynamics in the semimetal LaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, F.; Xu, J.; Botana, A. S.

We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov–de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence.We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strongmore » magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.« less

Star Formation and the Hall Effect

NASA Astrophysics Data System (ADS)

Braiding, Catherine

2011-10-01

Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well-studied. This thesis describes a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, presenting similarity solutions that demonstrate that the Hall effect has a profound influence on the dynamics of collapse. ... Hall diffusion also determines the strength of the magnetic diffusion and centrifugal shocks that bound the pseudo and rotationally-supported discs, and can introduce subshocks that further slow accretion onto the protostar. In cores that are not initially rotating Hall diffusion can even induce rotation, which could give rise to disc formation and resolve the magnetic braking catastrophe. The Hall effect clearly influences the dynamics of gravitational collapse and its role in controlling the magnetic braking and radial diffusion of the field would be worth exploring in future numerical simulations of star formation.

Synergistic effects of Mo and F doping on the quality factor of ZnO thin films prepared by a fully automated home-made nebulizer spray technique

NASA Astrophysics Data System (ADS)

Ravichandran, K.; Dineshbabu, N.; Arun, T.; Manivasaham, A.; Sindhuja, E.

2017-01-01

Transparent conducting oxide films of undoped, Mo doped, Mo + F co-doped ZnO were deposited using a facile homemade nebulizer spray pyrolysis technique. The effects of Mo and F doping on the structural, optical, electrical and surface morphological properties were investigated using XRD, UV-vis-NIR spectroscopy, I-V and Hall probe techniques, FESEM and AFM, and XPS, respectively. The XRD analysis confirms that all the films are well crystallized with hexagonal wurtzite structure. All the synthesized samples exhibit high transmittance (above 85%) in the visible region. The current-voltage (I-V) characteristics show the ohmic conduction nature of the films. The Hall probe measurements show that the synergistic effects of Mo and F doping cause desirable improvements in the quality factor of the ZnO films. A minimum resistivity of 5.12 × 10-3 Ω cm with remarkably higher values of mobility and carrier concentration is achieved for Mo (2 at.%) + F (15 at.%) co-doped ZnO films. A considerable variation in the intensity of deep level emission caused by Mo and F doping is observed in the photoluminescence (PL) studies. The presence of the constituent elements in the samples is confirmed by XPS analysis.

Spin-Driven Emergent Antiferromagnetism and Metal-Insulator Transition in Nanoscale p-Si

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

Temperature Ddependence of Anomalous Hall Conductivity in Rashba-type Ferromagnets

NASA Astrophysics Data System (ADS)

Sakuma, Akimasa

2018-03-01

We theoretically investigated the anomalous Hall conductivity (AHC) of Rashba-type ferromagnets at a finite temperature, taking into account spin fluctuation. We observed that the intrinsic AHC increases with increasing temperature. This can be understood from the characteristic nature of the spin chirality in the k-space, which increases with decreasing exchange splitting (EXS) when the spin-orbit interaction is much smaller than the EXS. The extrinsic part of the AHC also increases with temperature owing to the enhancement of the scattering strength of electrons due to the thermal fluctuation of the exchange field.

Hyperscaling violating black hole solutions and magneto-thermoelectric DC conductivities in holography

NASA Astrophysics Data System (ADS)

Ge, Xian-Hui; Tian, Yu; Wu, Shang-Yu; Wu, Shao-Feng

2017-08-01

We derive new black hole solutions in Einstein-Maxwell-axion-dilaton theory with a hyperscaling violation exponent. We then examine the corresponding anomalous transport exhibited by cuprate strange metals in the normal phase of high-temperature superconductors via gauge-gravity duality. Linear-temperature-dependence resistivity and quadratic-temperature-dependence inverse Hall angle can be achieved. In the high-temperature regime, the heat conductivity and Hall Lorenz ratio are proportional to the temperature. The Nernst signal first increases as temperature goes up, but it then decreases with increasing temperature in the high-temperature regime.

MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

NASA Astrophysics Data System (ADS)

Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

2018-06-01

We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

Experiments on H2-O2MHD power generation

NASA Technical Reports Server (NTRS)

Smith, J. M.

1980-01-01

Magnetohydrodynamic power generation experiments utilizing a cesium-seeded H2-O2 working fluid were carried out using a diverging area Hall duct having an entrance Mach number of 2. The experiments were conducted in a high-field strength cryomagnet facility at field strengths up to 5 tesla. The effects of power takeoff location, axial duct location within the magnetic field, generator loading, B-field strength, and electrode breakdown voltage were investigated. For the operating conditions of these experiments, it is found that the power output increases with the square of the B-field and can be limited by choking of the channel or interelectrode voltage breakdown which occurs at Hall fields greater than 50 volts/insulator. Peak power densities of greater than 100 MW/cu M were achieved.

Anderson Localization from the Berry-Curvature Interchange in Quantum Anomalous Hall Systems

NASA Astrophysics Data System (ADS)

Qiao, Zhenhua; Han, Yulei; Zhang, Lei; Wang, Ke; Deng, Xinzhou; Jiang, Hua; Yang, Shengyuan A.; Wang, Jian; Niu, Qian

2016-07-01

We theoretically investigate the localization mechanism of the quantum anomalous Hall effect (QAHE) in the presence of spin-flip disorders. We show that the QAHE stays quantized at weak disorders, then enters a Berry-curvature mediated metallic phase at moderate disorders, and finally goes into the Anderson insulating phase at strong disorders. From the phase diagram, we find that at the charge neutrality point although the QAHE is most robust against disorders, the corresponding metallic phase is much easier to be localized into the Anderson insulating phase due to the interchange of Berry curvatures carried, respectively, by the conduction and valence bands. In the end, we provide a phenomenological picture related to the topological charges to better understand the underlying physical origin of the QAHE Anderson localization.

Anderson Localization from the Berry-Curvature Interchange in Quantum Anomalous Hall Systems

NASA Astrophysics Data System (ADS)

Han, Yulei; Qiao, Zhenhua

In this talk, we theoretically investigate the localization mechanism of the quantum anomalous Hall effect (QAHE) in the presence of spin-flip disorders. We show that the QAHE stays quantized at weak disorders, then enters a Berry-curvature mediated metallic phase at moderate disorders, and finally goes into the Anderson insulating phase at strong disorders. From the phase diagram, we find that at the charge neutrality point although the QAHE is most robust against disorders, the corresponding metallic phase is much easier to be localized into the Anderson insulating phase due to the interchange of Berry curvatures carried, respectively, by the conduction and valence bands. In the end, we provide a phenomenological picture related to the topological charges to better understand the underlying physical origin of the QAHE Anderson localization.

Formation of helical domain walls in the fractional quantum Hall regime as a step toward realization of high-order non-Abelian excitations

NASA Astrophysics Data System (ADS)

Wu, Tailung; Wan, Zhong; Kazakov, Aleksandr; Wang, Ying; Simion, George; Liang, Jingcheng; West, Kenneth W.; Baldwin, Kirk; Pfeiffer, Loren N.; Lyanda-Geller, Yuli; Rokhinson, Leonid P.

2018-06-01

We propose an experimentally feasible platform to realize parafermions (high-order non-Abelian excitations) based on spin transitions in the fractional quantum Hall effect regime. As a proof of concept we demonstrate a local control of the spin transition at a filling factor 2/3 and formation of a conducting fractional helical domain wall (fhDW) along a gate boundary. Coupled to an s -wave superconductor these fhDWs are expected to support parafermionic excitations. We present exact diagonalization numerical studies of fhDWs and show that they indeed possess electronic and magnetic structures needed for the formation of parafermions. A reconfigurable network of fhDWs will allow manipulation and braiding of parafermionic excitations in multigate devices.

Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tóvári, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Kriváchy, T.

2014-09-22

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

Anisotropic dyonic black brane and its effects on holographic conductivity

NASA Astrophysics Data System (ADS)

Khimphun, Sunly; Lee, Bum-Hoon; Park, Chanyong; Zhang, Yun-Long

2017-10-01

We investigate a massive gravity theory involving the SL(2 , R) symmetry and anisotropy. Due to the SL(2 , R) invariance of the equations of motion, the complex con-ductivity of this model transforms covariantly under the SL(2 , R) transformation and the ratio of DC conductivities in different spatial directions is preserved even after the SL(2 , R) transformation. We further investigate AC and Hall conductivities by utilizing the Kubo formula. There exists a Drude-like peak in the region with a small anisotropy, while such a Drude peak disappears when anisotropy becomes large. We also show that the complex conductivity can have a cyclotron frequency pole even beyond the hydrodynamic limit.

Spin wave amplification using the spin Hall effect in permalloy/platinum bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladii, O.; Henry, Y.; Bailleul, M.

2016-05-16

We investigate the effect of an electrical current on the attenuation length of a 900 nm wavelength spin-wave in a permalloy/Pt bilayer using propagating spin-wave spectroscopy. The modification of the spin-wave relaxation rate is linear in current density, reaching up to 14% for a current density of 2.3 × 10{sup 11} A/m{sup 2} in Pt. This change is attributed to the spin transfer torque induced by the spin Hall effect and corresponds to an effective spin Hall angle of 0.13, which is among the highest values reported so far. The spin Hall effect thus appears as an efficient way of amplifying/attenuating propagating spin waves.

1000 Hours of Testing Completed on 10-kW Hall Thruster

NASA Technical Reports Server (NTRS)

Mason, Lee S.

2001-01-01

Between the months of April and August 2000, a 10-kW Hall effect thruster, designated T- 220, was subjected to a 1000-hr life test evaluation. Hall effect thrusters are propulsion devices that electrostatically accelerate xenon ions to produce thrust. Hall effect propulsion has been in development for many years, and low-power devices (1.35 kW) have been used in space for satellite orbit maintenance. The T-220, shown in the photo, produces sufficient thrust to enable efficient orbital transfers, saving hundreds of kilograms in propellant over conventional chemical propulsion systems. This test is the longest operation ever achieved on a high-power Hall thruster (greater than 4.5 kW) and is a key milestone leading to the use of this technology for future NASA, commercial, and military missions.

Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Vazquez, Juan M.; Berru, Robert I.

1993-01-01

Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

Hall effect sensors embedded within two-pole toothless stator assembly

NASA Technical Reports Server (NTRS)

Denk, Joseph (Inventor); Grant, Richard J. (Inventor)

1994-01-01

A two-pole toothless PM machine employs Hall effect sensors to indicate the position of the machine's rotor relative to power windings in the machine's stator. The Hall effect sensors are located in the main magnetic air gap underneath the power windings. The main magnetic air gap is defined by an outer magnetic surface of the rotor and an inner surface of the stator's flux collector ring.

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

NASA Astrophysics Data System (ADS)

Falson, Joseph; Kawasaki, Masashi

2018-05-01

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

Comparison of two data acquisition and processing systems of Moller polarimeter in Hall A of Jefferson Lab

DOE PAGES

Vereshchaka, Vadym V.; Glamazdin, Oleksandr V.; Pomatsalyuk, Roman I.

2014-07-01

Two data acquisition and processing systems are used simultaneously to measure electron beam polarization by Moller polarimeter in Hall A of Jefferson Lab (Newport News, VA, USA). The old system (since 1997) is fully functional, but is not repairable in case of malfunction (system modules arenot manufactured anymore). The new system (since 2010) based on flash-ADC is more accurate, but currently requires more detailed adjustment and further improvement. Description and specifications of two data acquisition and processing systems have been given. The results of polarization measurements during experiments conducted in Hall A from 2010 to 2012 are compared.

77 FR 12235 - Meeting of the National Advisory Council on Innovation and Entrepreneurship

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-29

... Entrepreneurship will hold a meeting on Tuesday, March 13, 2012. The open meeting will be conducted from 10 a.m.-1 p.m. and will be open to the public. The meeting will take place at Gallier Hall, 545 St. Charles.... Time: 10 a.m.-1 p.m. (CST). ADDRESSES: Gallier Hall, 545 St. Charles Avenue, New Orleans, LA 70130...

Raising the Bar: Standards and Tests in California's High Schools. A Town Hall Meeting.

ERIC Educational Resources Information Center

Arnstine, Barbara; Futernick, Ken; Hodson, Timothy A.; Ostgaard, Kolleen

In 1999, the LegiSchool Project planned to conduct the 12th in its series of televised Town Hall Meetings to provide a forum in which California high school students, educators, and legislators can engage in face-to-face dialogue about problems of mutual interest. For 1999, the topic is standards and tests in California high schools. This guide…

Fostering a Sense of Community in Residence Halls: A Role for Housing and Residential Professionals in Increasing College Student Persistence

ERIC Educational Resources Information Center

Erb, Natalee M.; Sinclair, Matthew S.; Braxton, John M.

2015-01-01

Fostering a sense of community should be at the center of every housing and residence life professional's efforts. Research conducted by Braxton et al. (2014) revealed that students who are able to identify with their residence hall community, interact with peers in this community, and find solidarity within the community experience an increased…

Metallic Wall Hall Thrusters

NASA Technical Reports Server (NTRS)

Goebel, Dan Michael (Inventor); Hofer, Richard Robert (Inventor); Mikellides, Ioannis G. (Inventor)

2016-01-01

A Hall thruster apparatus having walls constructed from a conductive material, such as graphite, and having magnetic shielding of the walls from the ionized plasma has been demonstrated to operate with nearly the same efficiency as a conventional non-magnetically shielded design using insulators as wall components. The new design is believed to provide the potential of higher power and uniform operation over the operating life of a thruster device.

Metallic Wall Hall Thrusters

NASA Technical Reports Server (NTRS)

Goebel, Dan Michael (Inventor); Hofer, Richard Robert (Inventor); Mikellides, Ioannis G. (Inventor)

2018-01-01

A Hall thruster apparatus having walls constructed from a conductive material, such as graphite, and having magnetic shielding of the walls from the ionized plasma has been demonstrated to operate with nearly the same efficiency as a conventional nonmagnetically shielded design using insulators as wall components. The new design is believed to provide the potential of higher power and uniform operation over the operating life of a thruster device.

The effect of inertia on the Dirac electron, the spin Hall current and the momentum space Berry curvature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

2013-02-15

We have studied the spin dependent force and the associated momentum space Berry curvature in an accelerating system. The results are derived by taking into consideration the non-relativistic limit of a generally covariant Dirac equation with an electromagnetic field present, where the methodology of the Foldy-Wouthuysen transformation is applied to achieve the non-relativistic limit. Spin currents appear due to the combined action of the external electric field, the crystal field and the induced inertial electric field via the total effective spin-orbit interaction. In an accelerating frame, the crucial role of momentum space Berry curvature in the spin dynamics has alsomore » been addressed from the perspective of spin Hall conductivity. For time dependent acceleration, the expression for the spin polarization has been derived. - Highlights: Black-Right-Pointing-Pointer We study the effect of acceleration on the Dirac electron in the presence of an electromagnetic field, where the acceleration induces an electric field. Black-Right-Pointing-Pointer Spin currents appear due to the total effective electric field via the total spin-orbit interaction. Black-Right-Pointing-Pointer We derive the expression for the spin dependent force and the spin Hall current, which is zero for a particular acceleration. Black-Right-Pointing-Pointer The role of the momentum space Berry curvature in an accelerating system is discussed. Black-Right-Pointing-Pointer An expression for the spin polarization for time dependent acceleration is derived.« less

Evidence for broken Galilean invariance at the quantum spin Hall edge

NASA Astrophysics Data System (ADS)

Geissler, Florian; Crépin, François; Trauzettel, Björn

2015-12-01

We study transport properties of the helical edge channels of a quantum spin Hall insulator, in the presence of electron-electron interactions and weak, local Rashba spin-orbit coupling. The combination of the two allows for inelastic backscattering that does not break time-reversal symmetry, resulting in interaction-dependent power-law corrections to the conductance. Here, we use a nonequilibrium Keldysh formalism to describe the situation of a long, one-dimensional edge channel coupled to external reservoirs, where the applied bias is the leading energy scale. By calculating explicitly the corrections to the conductance up to fourth order of the impurity strength, we analyze correlated single- and two-particle backscattering processes on a microscopic level. Interestingly, we show that the modeling of the leads together with the breaking of Galilean invariance has important effects on the transport properties. Such breaking occurs because the Galilean invariance of the bulk spectrum transforms into an emergent Lorentz invariance of the edge spectrum. With this broken Galilean invariance at the quantum spin Hall edge, we find a contribution to single-particle backscattering with a very low power scaling, while in the presence of Galilean invariance the leading contribution will be due to correlated two-particle backscattering only. This difference is further reflected in the different values of the Fano factor of the shot noise, an experimentally observable quantity. The described behavior is specific to the Rashba scatterer and does not occur in the case of backscattering off a time-reversal-breaking, magnetic impurity.

Influence of Mn concentration on magnetic topological insulator Mn xBi 2−xTe 3 thin-film Hall-effect sensor

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2015-06-11

Hall-effect (HE) sensors based on high-quality Mn-doped Bi 2Te 3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi 2Te 3. The sensors with low Mn concentrations, Mn xBi 2-xTe 3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almostmore » eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

Perceived Effectiveness of Hall Director Leadership Style on the Satisfaction of Resident Assistants in Mississippi

ERIC Educational Resources Information Center

Morris, Rheo Joelyn Avorice

2009-01-01

The purpose of this study was to ascertain which leadership style correlates most with RA satisfaction in residence halls at three public universities in Mississippi. When satisfied, RAs will be more efficient in their roles and this will transfer to students residing in the halls. As a result more students in the residence halls will become more…

Thermoelectric Properties of Lanthanum Sulfide

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, R.; Parker, J. B.; Zoltan, A.; Zoltan, L. D.; Danielson, L.; Raag, V.

1987-01-01

Report describes measurement of Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect in gamma-phase lanthanum sulfide with composition of La3-x S4. Results of study, part of search for high-temperature thermoelectric energy-conversion materials, indicate this sulfide behaves like extrinsic semiconductor over temperature range of 300 to 1,400 K, with degenerate carrier concentration controlled by stoichiometric ratio of La to S.

Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters

NASA Astrophysics Data System (ADS)

Cheng, B.; Choi, S.; Northrup, J. E.; Yang, Z.; Knollenberg, C.; Teepe, M.; Wunderer, T.; Chua, C. L.; Johnson, N. M.

2013-06-01

Improved p-type conductivity is demonstrated in AlGaN:Mg superlattice (SL) cladding layers with average Al composition ˜60%. The vertical conductivity ranges from 6.6 × 10-5 S/cm at a DC current of 1 mA to ˜0.1 S/cm at 550 mA and approaches the lateral conductivity that was obtained from Hall-effect measurements. The effective acceptor activation energy (EA) in the SL was determined to be 17 meV, nearly 10× smaller than EA in homogeneous p-GaN. The devices sustain current densities of 11 kA/cm2 under DC and up to 21 kA/cm2 under pulsed operation.

Comment on "Effects of Magnetic Field Gradient on Ion Beam Current in Cylindrical Hall Ion Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raitses, Y.; Smirnov A.; Fisch, N.J.

It is argued that the key difference of the cylindrical Hall thruster (CHT) as compared to the end-Hall ion source cannot be exclusively attributed to the magnetic field topology [Tang et al. J. Appl. Phys., 102, 123305 (2007)]. With a similar mirror-type topology, the CHT configuration provides the electric field with nearly equipotential magnetic field surfaces and a better suppression of the electron cross-field transport, as compared to both the end-Hall ion source and the cylindrical Hall ion source of Tang et al.

Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

NASA Astrophysics Data System (ADS)

Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

The Impact of a Health Campaign on Hand Hygiene and Upper Respiratory Illness among College Students Living in Residence Halls.

ERIC Educational Resources Information Center

White, Cindy; Kolble, Robin; Carlson, Rebecca; Lipson, Natasha

2005-01-01

Hand hygiene is a key element in preventing the transmission of cold and flu viruses. The authors conducted an experimental-control design study in 4 campus residence halls to determine whether a message campaign about hand hygiene and the availability of gel hand sanitizer could decrease cold and flu illness and school and work absenteeism. Their…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haidar, S. M., E-mail: haidar@imr.tohoku.ac.jp; Iguchi, R.; Yagmur, A.

We have investigated dc voltage generation induced by ferromagnetic resonance in a Co{sub 75}Fe{sub 25}/Pt film. In order to reduce rectification effects of anisotropic magnetoresistance and the planar Hall effect, which may be observed simultaneously with the inverse spin Hall effect, we selected Co{sub 75}Fe{sub 25} with extremely small anisotropic magnetoresistance as a spin injector. Using the difference in the spectral shape of voltage and in the angle dependence of in-plane magnetization among the effects, we demonstrated that the generated dc voltage is governed by the inverse spin Hall effect induced by spin pumping.

The Hall Effect in Hydrided Rare Earth Films

NASA Astrophysics Data System (ADS)

Koon, D. W.; Azofeifa, D. E.; Clark, N.

We describe two new techniques for measuring the Hall effect in capped rare earth films during hydriding. In one, we simultaneously measure resistivity and the Hall coefficient for a rare earth film covered with four different thicknesses of Pd, recovering the charge transport quantities for both materials. In the second technique, we replace Pd with Mn as the covering layer. We will present results from both techniques.

Hall effects on peristaltic flow of couple stress fluid in a vertical asymmetric channel

NASA Astrophysics Data System (ADS)

Maninaga Kumar, P.; Kavitha, A.; Saravana, R.

2017-11-01

The influence of Hall effect on peristaltic transport of a couple stress fluid in a vertical asymmetric channel is examined. The problem is solved under the assumptions of low Reynolds number and long wavelength. The velocity, temperature and concentration are obtained by using analytical solutions. Effect of Hall parameter, couple stress fluid parameter, Froude number, Hartmann number and the phase difference on the pumping characteristics, temperature and concentration are discussed graphically.

Hall effect on magnetohydrodynamic instabilities at an elliptic magnetic stagnation line

NASA Astrophysics Data System (ADS)

Spies, Günther O.; Faghihi, Mustafa

1987-06-01

To answer the question whether the Hall effect removes the unphysical feature of ideal magnetohydrodynamics of predicting small wavelength kink instabilities at any elliptic magnetic stagnation line, a normal mode analysis is performed of the motion of an incompressible Hall fluid about cylindrical Z-pinch equilibria with circular cross sections. The eigenvalue loci in the complex frequency plane are derived for the equilibrium with constant current density. Every particular mode becomes stable as the Hall parameter exceeds a critical value. This value, however, depends on the mode such that it increases to infinity as the ideal growth rate decreases to zero, implying that there always remains an infinite number of slowly growing instabilities. Correspondingly, the stability criterion for equilibria with arbitrary current distributions is independent of the Hall parameter.

Detection of fractional solitons in quantum spin Hall systems

NASA Astrophysics Data System (ADS)

Fleckenstein, C.; Traverso Ziani, N.; Trauzettel, B.

2018-03-01

We propose two experimental setups that allow for the implementation and the detection of fractional solitons of the Goldstone-Wilczek type. The first setup is based on two magnetic barriers at the edge of a quantum spin Hall system for generating the fractional soliton. If then a quantum point contact is created with the other edge, the linear conductance shows evidence of the fractional soliton. The second setup consists of a single magnetic barrier covering both edges and implementing a long quantum point contact. In this case, the fractional soliton can unambiguously be detected as a dip in the conductance without the need to control the magnetization of the barrier.

Two-terminal conductance fluctuations in the integer quantum Hall regime

NASA Astrophysics Data System (ADS)

Ho, Chang-Ming

1999-09-01

Motivated by recent experiments on the conductance fluctuations in mesoscopic integer quantum Hall systems, we consider a model in which the Coulomb interactions are incorporated into the picture of edge-state transport through a single saddle point. The occupancies of classical localized states in the two-dimensional electron system change due to the interactions between electrons when the gate voltage on top of the device is varied. The electrostatic potential between the localized states and the saddle point causes fluctuations of the saddle-point potential and thus fluctuations of the transmission probability of edge states. This simple model is studied numerically and compared with the observation.

Hidden Fermi liquid: Self-consistent theory for the normal state of high-Tc superconductors

NASA Astrophysics Data System (ADS)

Casey, Philip A.

The anomalous "strange metal" properties of the normal, non-superconducting state of the high-Tc cuprate superconductors have been extensively studied for over two decades. The resistivity is robustly T-linear at high temperatures, while at low T it appears to maintain linearity near optimal doping and is T2 at higher doping. The inverse Hall angle is strictly T2 and hence has a distinct scattering lifetime from the resistivity. The transport scattering lifetime is highly anisotropic as directly measured by angle-dependent magnetoresistance (ADMR) and indirectly in more traditional transport experiments. The IR conductivity exhibits a non-integer power-law in frequency, which we take as a defining characteristic of the "strange metal". A phenomenological theory of the transport and spectroscopic properties at a self-consistent and predictive level has been much sought after, yet elusive. Hidden Fermi liquid theory (HFL) explicitly accounts for the effects of Gutzwiller projection in the t-J Hamiltonian, widely believed to contain the essential physics of the high-Tc superconductors. We show this theory to be the first self-consistent description for the normal state of the cuprates based on transparent, fundamental assumptions. Our well-defined formalism also serves as a guide for further experimental confirmation. Chapter 1 reviews the "strange metal" properties and the relevant aspects of competing models. Chapter 2 presents the theoretical foundations of the formalism. Chapters 3 and 4 derive expressions for the entire normal state relating many of the properties, for example: angle-resolved photoemission, IR conductivity, resistivity, Hall angle, and by generalizing the formalism to include the Fermi surface topology---ADMR. Self-consistency is demonstrated with experimental comparisons, including the most recent laser-ARPES and ADMR. Chapter 5 discusses entropy transport, as in the thermal conductivity, thermal Hall conductivity, and consequent metrics of non-Fermi liquid behavior such as the Wiedemann-Franz and Kadowaki-Woods ratios.

Dynamics of antiferromagnetic skyrmion driven by the spin Hall effect

NASA Astrophysics Data System (ADS)

Jin, Chendong; Song, Chengkun; Wang, Jianbo; Liu, Qingfang

2016-10-01

Magnetic skyrmion moved by the spin-Hall effect is promising for the application of the generation racetrack memories. However, the Magnus force causes a deflected motion of skyrmion, which limits its application. Here, we create an antiferromagnetic skyrmion by injecting a spin-polarized pulse in the nanostripe and investigate the spin Hall effect-induced motion of antiferromagnetic skyrmion by micromagnetic simulations. In contrast to ferromagnetic skyrmion, we find that the antiferromagnetic skyrmion has three evident advantages: (i) the minimum driving current density of antiferromagnetic skyrmion is about two orders smaller than the ferromagnetic skyrmion; (ii) the velocity of the antiferromagnetic skyrmion is about 57 times larger than the ferromagnetic skyrmion driven by the same value of current density; (iii) antiferromagnetic skyrmion can be driven by the spin Hall effect without the influence of Magnus force. In addition, antiferromagnetic skyrmion can move around the pinning sites due to its property of topological protection. Our results present the understanding of antiferromagnetic skyrmion motion driven by the spin Hall effect and may also contribute to the development of antiferromagnetic skyrmion-based racetrack memories.

Surface conductance of graphene from non-contact resonant cavity.

PubMed

Obrzut, Jan; Emiroglu, Caglar; Kirillov, Oleg; Yang, Yanfei; Elmquist, Randolph E

2016-06-01

A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. The measurements are made in an air filled standard R100 rectangular waveguide configuration at one of the resonant frequency modes, typically at TE 103 mode of 7.4543 GHz. Surface conductance measurement involves monitoring a change in the quality factor of the cavity as the specimen is progressively inserted into the cavity in quantitative correlation with the specimen surface area. The specimen consists of a nano-carbon-layer supported on a low loss dielectric substrate. The thickness of the conducting nano-carbon layer does not need to be explicitly known, but it is assumed that the lateral dimension is uniform over the specimen area. The non-contact surface conductance measurements are illustrated for a typical graphene grown by chemical vapor deposition process, and for a high quality monolayer epitaxial graphene grown on silicon carbide wafers for which we performed non-gated quantum Hall resistance measurements. The sequence of quantized transverse Hall resistance at the Landau filling factors ν = ±6 and ±2, and the absence of the Hall plateau at ν = 4 indicate that the epitaxially grown graphene is a high quality mono-layer. The resonant microwave cavity measurement is sensitive to the surface and bulk conductivity, and since no additional processing is required, it preserves the integrity of the conductive graphene layer. It allows characterization with high speed, precision and efficiency, compared to transport measurements where sample contacts must be defined and applied in multiple processing steps.

Quantum Hall effect in ac driven graphene: From the half-integer to the integer case

NASA Astrophysics Data System (ADS)

Ding, Kai-He; Lim, Lih-King; Su, Gang; Weng, Zheng-Yu

2018-01-01

We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at σxy=±(n +1 /2 ) 4 e2/h (n is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at σxy=±n (4 e2/h ) starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with σxy=0 can be realized at the band center, hence fully restoring a conventional integer QHE with particle-hole symmetry. Within a low-energy Hamiltonian for Dirac cones merging, we show a very good agreement with the tight-binding calculations for the Hall plateau transitions. We also obtain the band structure for driven graphene ribbons to provide a further understanding on the appearance of the new Hall plateaus, showing a trivial insulator behavior for the σxy=0 state. In the presence of disorder, we numerically study the disorder-induced destruction of the quantum Hall states in a finite driven sample and find that qualitative features known in the undriven disordered case are maintained.

Tutorial: Physics and modeling of Hall thrusters

NASA Astrophysics Data System (ADS)

Boeuf, Jean-Pierre

2017-01-01

Hall thrusters are very efficient and competitive electric propulsion devices for satellites and are currently in use in a number of telecommunications and government spacecraft. Their power spans from 100 W to 20 kW, with thrust between a few mN and 1 N and specific impulse values between 1000 and 3000 s. The basic idea of Hall thrusters consists in generating a large local electric field in a plasma by using a transverse magnetic field to reduce the electron conductivity. This electric field can extract positive ions from the plasma and accelerate them to high velocity without extracting grids, providing the thrust. These principles are simple in appearance but the physics of Hall thrusters is very intricate and non-linear because of the complex electron transport across the magnetic field and its coupling with the electric field and the neutral atom density. This paper describes the basic physics of Hall thrusters and gives a (non-exhaustive) summary of the research efforts that have been devoted to the modelling and understanding of these devices in the last 20 years. Although the predictive capabilities of the models are still not sufficient for a full computer aided design of Hall thrusters, significant progress has been made in the qualitative and quantitative understanding of these devices.

The Hall effect in star formation

NASA Astrophysics Data System (ADS)

Braiding, C. R.; Wardle, M.

2012-05-01

Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well studied. We present a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, and similarity solutions that demonstrate the profound influence of the Hall effect on the dynamics of collapse. The solutions show that the size and sign of the Hall parameter can change the size of the protostellar disc by up to an order of magnitude and the protostellar accretion rate by 50 per cent when the ratio of the Hall to ambipolar diffusivities is varied between -0.5 ≤ηH/ηA≤ 0.2. These changes depend upon the orientation of the magnetic field with respect to the axis of rotation and create a preferred handedness to the solutions that could be observed in protostellar cores using next-generation instruments such as ALMA. Hall diffusion also determines the strength and position of the shocks that bound the pseudo and rotationally supported discs, and can introduce subshocks that further slow accretion on to the protostar. In cores that are not initially rotating (not examined here), Hall diffusion can even induce rotation, which could give rise to disc formation and resolve the magnetic braking catastrophe. The Hall effect clearly influences the dynamics of gravitational collapse and its role in controlling the magnetic braking and radial diffusion of the field merits further exploration in numerical simulations of star formation.

Interlayer tunneling in double-layer quantum hall pseudoferromagnets.

PubMed

Balents, L; Radzihovsky, L

2001-02-26

We show that the interlayer tunneling I-V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder, and thermal lengths. For weak tunneling, we predict a negative differential conductance of a power-law shape crossing over to a sharp zero-bias peak. An in-plane magnetic field splits this zero-bias peak, leading instead to a "derivative" feature at V(B)(B(parallel)) = 2 pi Planck's over 2 pi upsilon B(parallel)d/e phi(0), which gives a direct measurement of the dispersion of the Goldstone mode corresponding to the spontaneous symmetry breaking of the double-layer Hall state.

Can Hall effect trigger Kelvin-Helmholtz instability in sub-Alfvénic flows?

NASA Astrophysics Data System (ADS)

Pandey, B. P.

2018-05-01

In the Hall magnetohydrodynamics, the onset condition of the Kelvin-Helmholtz instability is solely determined by the Hall effect and is independent of the nature of shear flows. In addition, the physical mechanism behind the super- and sub-Alfvénic flows becoming unstable is quite different: the high-frequency right circularly polarized whistler becomes unstable in the super-Alfvénic flows whereas low-frequency, left circularly polarized ion-cyclotron wave becomes unstable in the presence of sub-Alfvénic shear flows. The growth rate of the Kelvin-Helmholtz instability in the super-Alfvénic case is higher than the corresponding ideal magnetohydrodynamic rate. In the sub-Alfvénic case, the Hall effect opens up a new, hitherto inaccessible (to the magnetohydrodynamics) channel through which the partially or fully ionized fluid can become Kelvin-Helmholtz unstable. The instability growth rate in this case is smaller than the super-Alfvénic case owing to the smaller free shear energy content of the flow. When the Hall term is somewhat smaller than the advection term in the induction equation, the Hall effect is also responsible for the appearance of a new overstable mode whose growth rate is smaller than the purely growing Kelvin-Helmholtz mode. On the other hand, when the Hall diffusion dominates the advection term, the growth rate of the instability depends only on the Alfvén -Mach number and is independent of the Hall diffusion coefficient. Further, the growth rate in this case linearly increases with the Alfvén frequency with smaller slope for sub-Alfvénic flows.

Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire.

PubMed

Hultin, Olof; Otnes, Gaute; Borgström, Magnus T; Björk, Mikael; Samuelson, Lars; Storm, Kristian

2016-01-13

We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

Spin Hall effects

NASA Astrophysics Data System (ADS)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical point of view, focusing on well-established and accepted physics. In such a young field, there remains much to be understood and explored, hence some of the future challenges and opportunities of this rapidly evolving area of spintronics are outlined.

Anomalous Hall Effect in a Feromagnetic Rare-Earth Cobalite

NASA Technical Reports Server (NTRS)

Samoilov, A. V.; Yeh, N. C.; Vasquez, R. P.

1996-01-01

Rare-Earth manganites and cobalites with the perovskite structure have been a subject of great recent interest because their electrical resistance changes significantly when a magnetic field is applied...we have studied the Hall effect in thin film La(sub 0.5)Ca(sub 0.5)CoO(sub 3) material and have obtained convincing evidence fo the so called anomalous Hall effect, typical for magnetic metals...Our results suggest that near the ferromagnetic ordering temperature, the dominant electron scattering mechanism is the spin fluctuation.

Precision Tests of a Quantum Hall Effect Device DC Equivalent Circuit Using Double-Series and Triple-Series Connections

PubMed Central

Jeffery, A.; Elmquist, R. E.; Cage, M. E.

1995-01-01

Precision tests verify the dc equivalent circuit used by Ricketts and Kemeny to describe a quantum Hall effect device in terms of electrical circuit elements. The tests employ the use of cryogenic current comparators and the double-series and triple-series connection techniques of Delahaye. Verification of the dc equivalent circuit in double-series and triple-series connections is a necessary step in developing the ac quantum Hall effect as an intrinsic standard of resistance. PMID:29151768

Assessment of High-Voltage Photovoltaic Technologies for the Design of a Direct Drive Hall Effect Thruster Solar Array

NASA Technical Reports Server (NTRS)

Mikellides, I. G.; Jongeward, G. A.; Schneider, T.; Carruth, M. R.; Peterson, T.; Kerslake, T. W.; Snyder, D.; Ferguson, D.; Hoskins, A.

2004-01-01

A three-year program to develop a Direct Drive Hall-Effect Thruster system (D2HET) begun in 2001 as part of the NASA Advanced Cross-Enterprise Technology Development initiative. The system, which is expected to reduce significantly the power processing, complexity, weight, and cost over conventional low-voltage systems, will employ solar arrays that operate at voltages higher than (or equal to) 300 V. The lessons learned from the development of the technology also promise to become a stepping-stone for the production of the next generation of power systems employing high voltage solar arrays. This paper summarizes the results from experiments conducted mainly at the NASA Marshal Space Flight Center with two main solar array technologies. The experiments focused on electron collection and arcing studies, when the solar cells operated at high voltages. The tests utilized small coupons representative of each solar array technology. A hollow cathode was used to emulate parts of the induced environment on the solar arrays, mostly the low-energy charge-exchange plasma (1012-1013 m-3 and 0.5-1 eV). Results and conclusions from modeling of electron collection are also summarized. The observations from the total effort are used to propose a preliminary, new solar array design for 2 kW and 30-40 kW class, deep space missions that may employ a single or a cluster of Hall- Effect thrusters.

Zero-field edge plasmons in a magnetic topological insulator [Zero-field edge magnetoplasmons in a magnetic topological insulator

DOE PAGES

Mahoney, Alice C.; Colless, James I.; Peeters, Lucas; ...

2017-11-28

Incorporating ferromagnetic dopants into three-dimensional topological insulator thin films has recently led to the realisation of the quantum anomalous Hall effect. These materials are of great interest since they may support electrical currents that flow without resistance, even at zero magnetic field. To date, the quantum anomalous Hall effect has been investigated using low-frequency transport measurements. However, transport results can be difficult to interpret due to the presence of parallel conductive paths, or because additional non-chiral edge channels may exist. Here we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb) 2Te 3. Wemore » identify features associated with chiral edge plasmons, a signature that robust edge channels are intrinsic to this material system. Finally, our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for an on-chip circuit element of practical importance: the zero-field microwave circulator.« less

Divacancy-hydrogen complexes in dislocation-free high-purity germanium. [Annealing, Hall effect, steady-state concentration energy dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haller, E.E.; Hubbard, G.S.; Hansen, W.L.

1976-09-01

A defect center with a single acceptor level at E/sub v/ + 0.08 eV appears in H/sub 2/-grown dislocation-free high-purity germanium. Its concentration changes reversibly upon annealing up to 650 K. By means of Hall-effect and conductivity measurements over a large temperature range the temperature dependence of the steady-state concentration between 450 and 720 K as well as the transients following changes in temperature were determined. The observed acceptor level is attributed to the divacancy-hydrogen complex V/sub 2/H. The complex reacts with hydrogen, dissolved in the Ge lattice or stored in traps, according to V/sub 2/H + H reversible V/submore » 2/H/sub 2/. An energy level associated with the divacancy-dihydrogen complex was not observed. These results are in good agreement with the idea that hydrogen in germanium forms a ''very deep donor'' (i.e., the energy level lies inside the valence band).« less

Quantum Effects in Inverse Opal Structures

NASA Astrophysics Data System (ADS)

Bleiweiss, Michael; Datta, Timir; Lungu, Anca; Yin, Ming; Iqbal, Zafar; Palm, Eric; Brandt, Bruce

2002-03-01

Properties of bismuth inverse opals and carbon opal replicas were studied. The bismuth nanostructures were fabricated by pressure infiltration into porous artificial opal, while the carbon opal replicas were created via CVD. These structures form a regular three-dimensional network in which the bismuth and carbon regions percolate in all directions between the close packed spheres of SiO_2. The sizes of the conducting regions are of the order of tens of nanometers. Static susceptibility of the bismuth inverse opal showed clear deHaas-vanAlphen oscillations. Transport measurements, including Hall, were done using standard ac four and six probe techniques in fields up to 17 T* and temperatures between 4.2 and 200 K. Observations of Shubnikov-deHaas oscillations in magnetoresistance, one-dimensional weak localization, quantum Hall and other effects will be discussed. *Performed at the National High Magnetic Field Lab (NHMFL) FSU, Tallahassee, FL. This work was partially supported by grants from DARPA-nanothermoelectrics, NASA-EPSCOR and the USC nanocenter.

Zero-field edge plasmons in a magnetic topological insulator [Zero-field edge magnetoplasmons in a magnetic topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahoney, Alice C.; Colless, James I.; Peeters, Lucas

Incorporating ferromagnetic dopants into three-dimensional topological insulator thin films has recently led to the realisation of the quantum anomalous Hall effect. These materials are of great interest since they may support electrical currents that flow without resistance, even at zero magnetic field. To date, the quantum anomalous Hall effect has been investigated using low-frequency transport measurements. However, transport results can be difficult to interpret due to the presence of parallel conductive paths, or because additional non-chiral edge channels may exist. Here we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb) 2Te 3. Wemore » identify features associated with chiral edge plasmons, a signature that robust edge channels are intrinsic to this material system. Finally, our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for an on-chip circuit element of practical importance: the zero-field microwave circulator.« less

Chiral pair of Fermi arcs, anomaly cancellation, and spin or valley Hall effects in Weyl metals with broken inversion symmetry

NASA Astrophysics Data System (ADS)

Jang, Iksu; Kim, Ki-Seok

2018-04-01

Anomaly cancellation has been shown to occur in broken time-reversal symmetry Weyl metals, which explains the existence of a Fermi arc. We extend this result in the case of broken inversion symmetry Weyl metals. Constructing a minimal model that takes a double pair of Weyl points, we demonstrate the anomaly cancellation explicitly. This demonstration explains why a chiral pair of Fermi arcs appear in broken inversion symmetry Weyl metals. In particular, we find that this pair of Fermi arcs gives rise to either "quantized" spin Hall or valley Hall effects, which corresponds to the "quantized" version of the charge Hall effect in broken time-reversal symmetry Weyl metals.

Spin Hall magnetoresistance in CoFe 2O 4/Pt films

DOE PAGES

Wu, Hao; Qintong, Zhang; Caihua, Wan; ...

2015-05-13

Pulse laser deposition and magnetron sputtering techniques have been employed to prepare MgO(001)//CoFe 2O 4/Pt samples. Cross section transmission electron microscope results prove that the CoFe 2O 4 film epitaxially grew along (001) direction. X-ray magnetic circular dichroism results show that magnetic proximity effect in this sample is negligible. Magnetoresistance (MR) properties confirm that spin Hall MR (SMR) dominates in this system. Spin Hall effect-induced anomalous Hall voltage was also observed in this sample. Lastly, these results not only demonstrate the universality of SMR effect but also demonstrate the utility in spintronics of CoFe 2O 4 as a new typemore » of magnetic insulator.« less

Effects of Hall current and electrical resistivity on the stability of gravitating anisotropic quantum plasma

NASA Astrophysics Data System (ADS)

Bhakta, S.; Prajapati, R. P.

2018-02-01

The effects of Hall current and finite electrical resistivity are studied on the stability of uniformly rotating and self-gravitating anisotropic quantum plasma. The generalized Ohm's law modified by Hall current and electrical resistivity is used along with the quantum magnetohydrodynamic fluid equations. The general dispersion relation is derived using normal mode analysis and discussed in the parallel and perpendicular propagations. In the parallel propagation, the Jeans instability criterion, expression of critical Jeans wavenumber, and Jeans length are found to be independent of non-ideal effects and uniform rotation but in perpendicular propagation only rotation affects the Jeans instability criterion. The unstable gravitating mode modified by Bohm potential and the stable Alfven mode modified by non-ideal effects are obtained separately. The criterion of firehose instability remains unaffected due to the presence of non-ideal effects. In the perpendicular propagation, finite electrical resistivity and quantum pressure anisotropy modify the dispersion relation, whereas no effect of Hall current was observed in the dispersion characteristics. The Hall current, finite electrical resistivity, rotation, and quantum corrections stabilize the growth rate. The stability of the dynamical system is analyzed using the Routh-Hurwitz criterion.

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

NASA Astrophysics Data System (ADS)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

Wide gap Chern Mott insulating phases achieved by design

NASA Astrophysics Data System (ADS)

Guo, Hongli; Gangopadhyay, Shruba; Köksal, Okan; Pentcheva, Rossitza; Pickett, Warren E.

2017-12-01

Quantum anomalous Hall insulators, which display robust boundary charge and spin currents categorized in terms of a bulk topological invariant known as the Chern number (Thouless et al Phys. Rev. Lett. 49, 405-408 (1982)), provide the quantum Hall anomalous effect without an applied magnetic field. Chern insulators are attracting interest both as a novel electronic phase and for their novel and potentially useful boundary charge and spin currents. Honeycomb lattice systems such as we discuss here, occupied by heavy transition-metal ions, have been proposed as Chern insulators, but finding a concrete example has been challenging due to an assortment of broken symmetry phases that thwart the topological character. Building on accumulated knowledge of the behavior of the 3d series, we tune spin-orbit and interaction strength together with strain to design two Chern insulator systems with bandgaps up to 130 meV and Chern numbers C = -1 and C = 2. We find, in this class, that a trade-off between larger spin-orbit coupling and strong interactions leads to a larger gap, whereas the stronger spin-orbit coupling correlates with the larger magnitude of the Hall conductivity. Symmetry lowering in the course of structural relaxation hampers obtaining quantum anomalous Hall character, as pointed out previously; there is only mild structural symmetry breaking of the bilayer in these robust Chern phases. Recent growth of insulating, magnetic phases in closely related materials with this orientation supports the likelihood that synthesis and exploitation will follow.

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

NASA Astrophysics Data System (ADS)

Tsakonas, C.; Kuznetsov, V. L.; Cranton, W. M.; Kalfagiannis, N.; Abusabee, K. M.; Koutsogeorgis, D. C.; Abeywickrama, N.; Edwards, P. P.

2017-12-01

We report the low temperature (T  <  70 °C) fabrication of ZnO thin films (~140 nm) with Hall mobility of up to 17.3 cm2 V-1 s-1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T  <  70 °C and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging the films. Laser annealing of the films after aging in the lab under 25%-35% relative humidity and at an average illuminance of 120 lux resulted in an overall higher mobility and relatively low carrier concentration in comparison to the non-aged films that were laser processed immediately after deposition. A maximum overall measured Hall mobility of 17.3 cm2 V-1 s-1 at a carrier density of 2.3  ×  1018 cm-3 was measured from a 1 GΩ as deposited and aged film after the laser treatment. We suggest that the aging of non-processed films reduces structural defects mainly at grain boundaries by air species chemisorption, with concomitant increase in thermal conductivity so that laser processing can have an enhancing effect. Such a processing combination can act synergistically and produce suitable active layers for TFT applications with low temperature processing requirements.

Piezo Voltage Controlled Planar Hall Effect Devices

PubMed Central

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-01-01

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

Piezo Voltage Controlled Planar Hall Effect Devices.

PubMed

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers

NASA Astrophysics Data System (ADS)

Meng, K. K.; Zhao, X. P.; Liu, P. F.; Liu, Q.; Wu, Y.; Li, Z. P.; Chen, J. K.; Miao, J.; Xu, X. G.; Zhao, J. H.; Jiang, Y.

2018-02-01

We have investigated the topological Hall effect (THE) in MnGa/Pt and MnGa/Ta bilayers induced by the inter- facial Dzyaloshinskii-Moriya interaction (DMI). By varying the growth parameters, we can modulate the domain wall energy, and the largest THE signals are found when the domain wall energy is the smallest. The large topological portion of the Hall signal from the total Hall signal has been extracted in the whole temperature range from 5 to 300 K. These results open up the exploration of the DMI induced magnetic behavior based on the bulk perpendicular magnetic anisotropy materials for fundamental physics and magnetic storage technologies.

Effect of capping layer on spin-orbit torques

NASA Astrophysics Data System (ADS)

Sun, Chi; Siu, Zhuo Bin; Tan, Seng Ghee; Yang, Hyunsoo; Jalil, Mansoor B. A.

2018-04-01

In order to enhance the magnitude of spin-orbit torque (SOT), considerable experimental works have been devoted to studying the thickness dependence of the different layers in multilayers consisting of heavy metal (HM), ferromagnet (FM), and capping layers. Here, we present a theoretical model based on the spin-drift-diffusion formalism to investigate the effect of the capping layer properties such as its thickness on the SOT observed in experiments. It is found that the spin Hall-induced SOT can be significantly enhanced by incorporating a capping layer with an opposite spin Hall angle to that of the HM layer. The spin Hall torque can be maximized by tuning the capping layer thickness. However, in the absence of the spin Hall effect (SHE) in the capping layer, the torque decreases monotonically with the capping layer thickness. Conversely, the spin Hall torque is found to decrease monotonically with the FM layer thickness, irrespective of the presence or absence of the SHE in the capping layer. All these trends are in correspondence with experimental observations. Finally, our model suggests that capping layers with a long spin diffusion length and high resistivity would also enhance the spin Hall torque.

Exploring 4D quantum Hall physics with a 2D topological charge pump

NASA Astrophysics Data System (ADS)

Lohse, Michael; Schweizer, Christian; Price, Hannah M.; Zilberberg, Oded; Bloch, Immanuel

2018-01-01

The discovery of topological states of matter has greatly improved our understanding of phase transitions in physical systems. Instead of being described by local order parameters, topological phases are described by global topological invariants and are therefore robust against perturbations. A prominent example is the two-dimensional (2D) integer quantum Hall effect: it is characterized by the first Chern number, which manifests in the quantized Hall response that is induced by an external electric field. Generalizing the quantum Hall effect to four-dimensional (4D) systems leads to the appearance of an additional quantized Hall response, but one that is nonlinear and described by a 4D topological invariant—the second Chern number. Here we report the observation of a bulk response with intrinsic 4D topology and demonstrate its quantization by measuring the associated second Chern number. By implementing a 2D topological charge pump using ultracold bosonic atoms in an angled optical superlattice, we realize a dynamical version of the 4D integer quantum Hall effect. Using a small cloud of atoms as a local probe, we fully characterize the nonlinear response of the system via in situ imaging and site-resolved band mapping. Our findings pave the way to experimentally probing higher-dimensional quantum Hall systems, in which additional strongly correlated topological phases, exotic collective excitations and boundary phenomena such as isolated Weyl fermions are predicted.

Exploring 4D quantum Hall physics with a 2D topological charge pump.

PubMed

Lohse, Michael; Schweizer, Christian; Price, Hannah M; Zilberberg, Oded; Bloch, Immanuel

2018-01-03

The discovery of topological states of matter has greatly improved our understanding of phase transitions in physical systems. Instead of being described by local order parameters, topological phases are described by global topological invariants and are therefore robust against perturbations. A prominent example is the two-dimensional (2D) integer quantum Hall effect: it is characterized by the first Chern number, which manifests in the quantized Hall response that is induced by an external electric field. Generalizing the quantum Hall effect to four-dimensional (4D) systems leads to the appearance of an additional quantized Hall response, but one that is nonlinear and described by a 4D topological invariant-the second Chern number. Here we report the observation of a bulk response with intrinsic 4D topology and demonstrate its quantization by measuring the associated second Chern number. By implementing a 2D topological charge pump using ultracold bosonic atoms in an angled optical superlattice, we realize a dynamical version of the 4D integer quantum Hall effect. Using a small cloud of atoms as a local probe, we fully characterize the nonlinear response of the system via in situ imaging and site-resolved band mapping. Our findings pave the way to experimentally probing higher-dimensional quantum Hall systems, in which additional strongly correlated topological phases, exotic collective excitations and boundary phenomena such as isolated Weyl fermions are predicted.

Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design.

PubMed

Hultin, Olof; Otnes, Gaute; Samuelson, Lars; Storm, Kristian

2017-02-08

Electrical characterization of nanowires is a time-consuming and challenging task due to the complexity of single nanowire device fabrication and the difficulty in interpreting the measurements. We present a method to measure Hall effect in nanowires using a three-probe device that is simpler to fabricate than previous four-probe nanowire Hall devices and allows characterization of nanowires with smaller diameter. Extraction of charge carrier concentration from the three-probe measurements using an analytical model is discussed and compared to simulations. The validity of the method is experimentally verified by a comparison between results obtained with the three-probe method and results obtained using four-probe nanowire Hall measurements. In addition, a nanowire with a diameter of only 65 nm is characterized to demonstrate the capabilities of the method. The three-probe Hall effect method offers a relatively fast and simple, yet accurate way to quantify the charge carrier concentration in nanowires and has the potential to become a standard characterization technique for nanowires.

Sign reversal of Hall signals in Tm3Fe5O12 /Pt with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Liu, Yawen; Tang, Chi; Xu, Yadong; Shi, Zhong; Shi, Jing

Robust interface strain-induced perpendicular magnetic anisotropy is produced in atomically flat ferromagnetic insulator Tm3Fe5O12 (TIG) films grown with pulsed laser deposition on both substituted-Gd3Ga5O12 and Nd3Ga5O12 (NGG). In TIG/Pt bilayers, we observe large hysteresis loops over a wide range of Pt thicknesses and temperatures. Both the ordinary Hall effect and anomalous Hall effect undergo a sign reversal as the temperature is lowered. The temperature dependence of the Hall signals in bilayers with different thickness of Pt indicates the existence of exchange interaction at the interface. Our results provide a clue to further understand the origin of the anomalous Hall effect in ferromagnetic insulator/normal metal bilayer systems. The work was supported as part of the SHINES, an Energy Frontier Research Center funded by the US Department of Energy, BES under Award No. SC0012670.

Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

DOE PAGES

Laroche, Dominique; Huang, ShiHsien; Nielsen, Erik; ...

2015-04-08

We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 10 10 cm -2 to 2.7 × 10 11 cm -2 were achieved, yielding a maximal combined Hall mobility (μ Hall ) of 7.7 × 10 5 cm 2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to n Hall > 3.3 × 10 10 cm -2,more » consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.« less

Effects of growth temperatures on the physical properties of Cu2ZnSnS4 thin films deposited through spray pyrolysis for solar cell applications

NASA Astrophysics Data System (ADS)

Fadavieslam, M. R.; Keshavarz, S.

2018-02-01

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 °C at a step of 50 °C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 °C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 × 1017 to 2.36 × 1019 cm-3, Hall mobility increased from 30.96 to 68.52 cm2/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 × 10-3 Ωcm. Hall effect analysis indicated that the films exhibited p-type conductivity.

Time-domain detection of current controlled magnetization damping in Pt/Ni{sub 81}Fe{sub 19} bilayer and determination of Pt spin Hall angle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganguly, A.; Haldar, A.; Sinha, J.

2014-09-15

The effect of spin torque from the spin Hall effect in Pt/Ni{sub 81}Fe{sub 19} rectangular bilayer film was investigated using time-resolved magneto-optical Kerr microscopy. Current flow through the stack resulted in a linear variation of effective damping up to ±7%, attributed to spin current injection from the Pt into the Ni{sub 81}Fe{sub 19}. The spin Hall angle of Pt was estimated as 0.11 ± 0.03. The modulation of the damping depended on the angle between the current and the bias magnetic field. These results demonstrate the importance of optical detection of precessional magnetization dynamics for studying spin transfer torque due to spinmore » Hall effect.« less

Real-space and reciprocal-space Berry phases in the Hall effect of Mn(1-x)Fe(x)Si.

PubMed

Franz, C; Freimuth, F; Bauer, A; Ritz, R; Schnarr, C; Duvinage, C; Adams, T; Blügel, S; Rosch, A; Mokrousov, Y; Pfleiderer, C

2014-05-09

We report an experimental and computational study of the Hall effect in Mn(1-x)Fe(x)Si, as complemented by measurements in Mn(1-x)Co(x)Si, when helimagnetic order is suppressed under substitutional doping. For small x the anomalous Hall effect (AHE) and the topological Hall effect (THE) change sign. Under larger doping the AHE remains small and consistent with the magnetization, while the THE grows by over a factor of 10. Both the sign and the magnitude of the AHE and the THE are in excellent agreement with calculations based on density functional theory. Our study provides the long-sought material-specific microscopic justification that, while the AHE is due to the reciprocal-space Berry curvature, the THE originates in real-space Berry phases.

6D fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Heckman, Jonathan J.; Tizzano, Luigi

2018-05-01

We present a 6D generalization of the fractional quantum Hall effect involving membranes coupled to a three-form potential in the presence of a large background four-form flux. The low energy physics is governed by a bulk 7D topological field theory of abelian three-form potentials with a single derivative Chern-Simons-like action coupled to a 6D anti-chiral theory of Euclidean effective strings. We derive the fractional conductivity, and explain how continued fractions which figure prominently in the classification of 6D superconformal field theories correspond to a hierarchy of excited states. Using methods from conformal field theory we also compute the analog of the Laughlin wavefunction. Compactification of the 7D theory provides a uniform perspective on various lower-dimensional gapped systems coupled to boundary degrees of freedom. We also show that a supersymmetric version of the 7D theory embeds in M-theory, and can be decoupled from gravity. Encouraged by this, we present a conjecture in which IIB string theory is an edge mode of a 10 + 2-dimensional bulk topological theory, thus placing all twelve dimensions of F-theory on a physical footing.

Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

NASA Astrophysics Data System (ADS)

Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

2016-05-01

We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we used to describe the charge transport. We found that the band-edge variation dominates the charge transport in high-quality a-IGZO TFTs in the above-threshold voltage region, whereas the localized states need not to be invoked to account for the experimental results in this material.

Coherence length saturation at the low temperature limit in two-dimensional hole gas

NASA Astrophysics Data System (ADS)

Shan, Pujia; Fu, Hailong; Wang, Pengjie; Yang, Jixiang; Pfeiffer, L. N.; West, K. W.; Lin, Xi

2018-05-01

The plateau-plateau transition in the integer quantum Hall effect is studied in three Hall bars with different widths. The slopes of the Hall resistance as a function of magnetic field follow the scaling power law as expected in the plateau-plateau transition, and saturate at the low temperature limit. Surprisingly, the saturation temperature is irrelevant with the Hall bar size, which suggests that the saturation of the coherence length is intrinsic.

Large tunable photoeffect on ion conduction in halide perovskites and implications for photodecomposition

NASA Astrophysics Data System (ADS)

Kim, Gee Yeong; Senocrate, Alessandro; Yang, Tae-Youl; Gregori, Giuliano; Grätzel, Michael; Maier, Joachim

2018-05-01

In the same way as electron transport is crucial for information technology, ion transport is a key phenomenon in the context of energy research. To be able to tune ion conduction by light would open up opportunities for a wide realm of new applications, but it has been challenging to provide clear evidence for such an effect. Here we show through various techniques, such as transference-number measurements, permeation studies, stoichiometric variations, Hall effect experiments and the use of blocking electrodes, that light excitation enhances by several orders of magnitude the ionic conductivity of methylammonium lead iodide, the archetypal metal halide photovoltaic material. We provide a rationale for this unexpected phenomenon and show that it straightforwardly leads to a hitherto unconsidered photodecomposition path of the perovskite.

Deficiency of the bulk spin Hall effect model for spin-orbit torques in magnetic-insulator/heavy-metal heterostructures

NASA Astrophysics Data System (ADS)

Li, Junxue; Yu, Guoqiang; Tang, Chi; Liu, Yizhou; Shi, Zhong; Liu, Yawen; Navabi, Aryan; Aldosary, Mohammed; Shao, Qiming; Wang, Kang L.; Lake, Roger; Shi, Jing

2017-06-01

Electrical currents in a magnetic-insulator/heavy-metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy-metal side and spin-orbit torques (SOTs) on the magnetic-insulator side. Within the framework of a pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to SMR should be equal to the ratio of the fieldlike torque (FLT) to the dampinglike torque (DLT). We perform a quantitative study of SMR, SH-AHE, and SOTs in a series of thulium iron garnet/platinum or T m3F e5O12/Pt heterostructures with different T m3F e5O12 thicknesses, where T m3F e5O12 is a ferrimagnetic insulator with perpendicular magnetic anisotropy. We find the ratio between the measured effective fields of FLT and DLT is at least two times larger than the ratio of the SH-AHE to SMR. In addition, the bulk SHE model grossly underestimates the spin-torque efficiency of FLT. Our results reveal deficiencies of the bulk SHE model and also address the importance of interfacial effects such as the Rashba and magnetic proximity effects in magnetic-insulator/heavy-metal heterostructures.

Hall effect in Ce/sub 1-x/Y/sub x/Pd/sub 3/ mixed-valence alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fert, A.; Pureur, P.; Hamzic, A.

Mixed-valence and Kondo lattice systems exhibit large anomalous Hall coefficients with a striking change of sign at low temperature in several systems (CePd/sub 3/, CeCu/sub 6/,..., etc.). We have studied the Hall effect of Ce/sub 1-x/Y/sub x/Pd/sub 3/, in which the substitution of small amounts of Y for Ce prevents the development of coherence at low temperature. We find that the Hall coefficient does not change its sign at low temperature and can be well understood in the one-impurity model of Ramakrishnan, Coleman, and Anderson. We infer that the change of sign observed in CePd/sub 3/ is an effect ofmore » coherence.« less

Topological Phase Transitions in the Photonic Spin Hall Effect

DOE PAGES

Kort-Kamp, Wilton Junior de Melo

2017-10-04

The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. In this work, we unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, and material properties, and features nontrivial topological properties. Finally, we discover that photonic Hall shifts are sensitive to spin and valleymore » properties of the charge carriers, providing an unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.« less

Magnetic field mediated conductance oscillation in graphene p–n junctions

NASA Astrophysics Data System (ADS)

Cheng, Shu-Guang

2018-04-01

The electronic transport of graphene p–n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus magnetic field shows a Shubnikov–de Haas oscillation. At higher magnetic field, the p–n junction subjected to the quasi-classical regime and the formation of snake states results in periodical backscattering and transmission as magnetic field varies. The conductance oscillation pattern is mediated both by magnetic field and the carrier concentration on bipolar regions. For medium magnetic field between above two regimes, the combined contributions of resonant tunneling, snake states oscillation and Aharanov–Bohm interference induce irregular oscillation of conductance. At very high magnetic field, the system is subjected to quantum Hall regime. Under disorder, the quantum tunneling at low magnetic field is slightly affected and the oscillation of snake states at higher magnetic field is suppressed. In the quantum Hall regime, the conductance is a constant as predicted by the mixture rule.

Transport anomalies of high-mobility Q-valley electrons in few-layer WS2 and MoS2

NASA Astrophysics Data System (ADS)

Wang, Ning

Atomically thin transition metal dichalcogenides (TMDCs) have opened new avenues for exploring physical property anomalies due to their large band gaps, strong spin-orbit couplings, and rich valley degrees of freedom. Although novel optical phenomena such as valley selective circular dichroism, opto-valley Hall effect, and valley Zeeman effect have been extensively studied in TMDCs, investigation of quantum transport properties has encountered a number of obstacles primarily due to the low carrier mobility and strong impurity scattering. Recently, we successfully fabricated ultrahigh-mobility few-layer TMDC field-effect transistors based on the boron nitride encapsulation method and observed a number of interesting transport properties, such as even-odd layer-dependent magnetotransport of Q-valley electrons in WS2 and MoS2 and unconventional quantum Hall transport of Γ-valley hole carriers in WSe2. In few-layer samples of these TMDCs, the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q-valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q-valleys to be spin-valley coupled. In this talk, I'll demonstrate the prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices. In addition, we observe a series of quantum Hall states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field in p-type few-layer TMDCs, indicating a large Zeeman energy associated with the carriers in the valence band at the Γ-valley. Financial supports from the Research Grants Council of Hong Kong (Project Nos. 16302215, HKU9/CRF/13G, 604112 and N-HKUST613/12) are hereby acknowledged.

Comment on 'Effects of magnetic field gradient on ion beam current in cylindrical Hall ion source' [J. Appl. Phys. 102, 123305 (2007)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raitses, Y.; Smirnov, A.; Fisch, N. J.

It is argued that the key difference in the cylindrical Hall thruster (CHT) as compared to the end-Hall ion source cannot be exclusively attributed to the magnetic field topology [Tang et al., J. Appl. Phys. 102, 123305 (2007)]. With a similar mirror-type topology, the CHT configuration provides the electric field with nearly equipotential magnetic field surfaces and a better suppression of the electron cross-field transport, as compared to both the end-Hall ion source and the cylindrical Hall ion source of [Tang et al., J. Appl. Phys. 102, 123305 (2007)].

Thermoelectric Properties and Hall Effect of Bi2Te3-xSex Polycrystalline Materials Prepared by a Hot Press Method

NASA Astrophysics Data System (ADS)

Yashima, Isamu; Watanave, Hiroshi; Ogisu, Takayasu; Tsukuda, Ryouma; Sato, Susumu

1998-05-01

Bi2Te3-xSex (0≦x<1) polycrystalline solids are prepared by a hot press method and their thermoelectric properties are studied. The samples show the maximum value of Z = 2.3×10-3 K-1 at x=0.22. The lattice thermal conductivity is smaller than that of a single crystal. The lattice constant and power factor decrease upon increasing the selenium substitution while thermal conductivity decreases for x values up to 0.33 and becomes constant for x values greater than 0.33.

Fractional quantum Hall effect at Landau level filling ν = 4/11

DOE PAGES

Pan, W.; Baldwin, K. W.; West, K. W.; ...

2015-01-09

In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance R xx and a quantized Hall resistance R xy, within 1% of the expected value of h/(4/11)e 2, were observed. The temperature dependence of the R xx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν =more » 3/8 and 5/13.« less

Hall viscosity of a chiral two-orbital superconductor at finite temperatures

NASA Astrophysics Data System (ADS)

Yazdani-Hamid, Meghdad; Shahzamanian, Mohammad Ali

2018-06-01

The Hall viscosity known as the anti-symmetric part of the viscosity fourth-rank tensor. Such dissipationless response which appears for systems with broken time reversal symmetry. We calculate this non-dissipative quantity for a chiral two-orbital superconductor placed in a viscoelastic magnetic field using the linear response theory and apply our calculations to the putative multiband chiral superconductor Sr2RuO4. The chirality origin of a multiband superconductor arises from the interorbital coupling of the superconducting state. This feature leads to the robustness of the Hall viscosity against temperature and impurity effects. We study the temperature effect on the Hall viscosity at the one-loop approximation.

Photo-excited zero-resistance states in quasi-two-dimensional GaAs / Al xGa 1- xAs devices

NASA Astrophysics Data System (ADS)

Mani, R. G.

2007-12-01

We illustrate some experimental features of the recently discovered radiation-induced zero-resistance states in the high-mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the radiation-induced changes in the diagonal resistance and the Hall effect. We show that, quantum Hall effects, i.e., quantum Hall plateaus, disappear under photoexcitation, at the minima of the radiation-induced magnetoresistance oscillations.

Shot noise generated by graphene p–n junctions in the quantum Hall effect regime

PubMed Central

Kumada, N.; Parmentier, F. D.; Hibino, H.; Glattli, D. C.; Roulleau, P.

2015-01-01

Graphene offers a unique system to investigate transport of Dirac Fermions at p–n junctions. In a magnetic field, combination of quantum Hall physics and the characteristic transport across p–n junctions leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a p–n junction could be used as an electronic beam splitter. Here we report the shot noise study of the mode-mixing process and demonstrate the crucial role of the p–n junction length. For short p–n junctions, the amplitude of the noise is consistent with an electronic beam-splitter behaviour, whereas, for longer p–n junctions, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing. PMID:26337067

Magnetic-proximity-induced magnetoresistance on topological insulators

NASA Astrophysics Data System (ADS)

Chiba, Takahiro; Takahashi, Saburo; Bauer, Gerrit E. W.

2017-03-01

We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (TIs) that are capped by a ferromagnetic insulator (FI). We calculate charge and spin transport by Kubo and Boltzmann theories, taking into account the ladder-vertex correction and the in-scattering due to normal and magnetic disorder. The induced exchange splitting is found to generate an electric conductivity that depends on the magnetization orientation, but its form is very different from both the anisotropic and the spin Hall MR. The in-plane MR vanishes identically for nonmagnetic disorder, while out-of-plane magnetizations cause a large MR ratio. On the other hand, we do find an in-plane MR and planar Hall effect in the presence of magnetic disorder aligned with the FI magnetization. Our results may help us understand recent transport measurements on TI |FI systems.

Evaluation of the William S. Hall Psychiatric Institute Clinical Psychology Internship: a replication and extension.

PubMed

Stader, Sandra R; Myers, DeRosset; Forand, Angela Q; Holmes, George R; McNulty, George F; Frey, Linda; Bolton, Staci S

2010-12-01

This study extends three earlier investigations involving participants who completed their predoctoral clinical psychology internship at the William S. Hall Psychiatric Institute. Intern graduates (N = 37) evaluated how effectively their internship training prepared them for seven aspects of their current work as practicing psychologists. Participants also rated the relevancy of 24 different internship training experiences to their current work and how much these experiences contributed to their development as clinical psychologists. The present study, in conjunction with the three previous studies, covers most of the 40-year period since the inception of the internship program. Analysis of the current data indicates the internship has improved over time and was deemed an exceptional training experience by its graduates. Findings may be of particular interest to internship directors and faculty interested in improving their training program and those who plan to conduct a self-study to maintain their accreditation for clinical psychology internship.

Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe1 -yCoyGe films

NASA Astrophysics Data System (ADS)

Spencer, Charles S.; Gayles, Jacob; Porter, Nicholas A.; Sugimoto, Satoshi; Aslam, Zabeada; Kinane, Christian J.; Charlton, Timothy R.; Freimuth, Frank; Chadov, Stanislav; Langridge, Sean; Sinova, Jairo; Felser, Claudia; Blügel, Stefan; Mokrousov, Yuriy; Marrows, Christopher H.

2018-06-01

Epitaxial films of the B20-structure compound Fe1 -yCoyGe were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulklike values of one Bohr magneton per Fe atom for FeGe to zero for nonmagnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content y and diverges at y ˜0.45 . This indicates a zero crossing of the DMI, which we reproduced in calculations using first-principles methods. We also measured the longitudinal and Hall resistivity of our films as a function of magnetic field, temperature, and Co content y . The Hall resistivity is expected to contain contributions from the ordinary, anomalous, and topological Hall effects. Both the anomalous and topological Hall resistivities show peaks around y ˜0.5 . Our first-principles calculations show a peak in the topological Hall constant at this value of y , related to the strong spin polarization predicted for intermediate values of y . Our calculations predict half-metallicity for y =0.6 , consistent with the experimentally observed linear magnetoresistance at this composition, and potentially related to the other unusual transport properties for intermediate value of y . While it is possible to reconcile theory with experiment for the various Hall effects for FeGe, the large topological Hall resistivities for y ˜0.5 are much larger than expected when the very small emergent fields associated with the divergence in the DMI are taken into account.

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

PubMed

Mani, Arjun; Benjamin, Colin

2016-04-13

On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin-orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible--the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case.

Inverse spin Hall effect by spin injection

NASA Astrophysics Data System (ADS)

Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

2007-09-01

Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

Synthesis and characterization of transparent conductive zinc oxide thin films by sol-gel spin coating method

NASA Astrophysics Data System (ADS)

Winarski, David

Zinc oxide has been given much attention recently as it is promising for various semiconductor device applications. ZnO has a direct band gap of 3.3 eV, high exciton binding energy of 60 meV and can exist in various bulk powder and thin film forms for different applications. ZnO is naturally n-type with various structural defects, which sparks further investigation into the material properties. Although there are many potential applications for this ZnO, an overall lack of understand and control of intrinsic defects has proven difficult to obtain consistent, repeatable results. This work studies both synthesis and characterization of zinc oxide in an effort to produce high quality transparent conductive oxides. The sol-gel spin coating method was used to obtain highly transparent ZnO thin films with high UV absorbance. This research develops a new more consistent method for synthesis of these thin films, providing insight for maintaining quality control for each step in the procedure. A sol-gel spin coating technique is optimized, yielding highly transparent polycrystalline ZnO thin films with tunable electrical properties. Annealing treatment in hydrogen and zinc atmospheres is researched in an effort to increase electrical conductivity and better understand intrinsic properties of the material. These treatment have shown significant effects on the properties of ZnO. Characterization of doped and undoped ZnO synthesized by the sol-gel spin coating method was carried out using scanning electron microscopy, UV-Visible range absorbance, X-ray diffraction, and the Hall Effect. Treatment in hydrogen shows an overall decrease in the number of crystal phases and visible absorbance while zinc seems to have the opposite effect. The Hall Effect has shown that both annealing environments increase the n-type conductivity, yielding a ZnO thin film with a carrier concentration as high as 3.001 x 1021 cm-3.

Computation of Neutral Gas Flow from a Hall Thruster into a Vacuum Chamber

DTIC Science & Technology

2002-10-18

try to quantify these effects, the direct simulation Monte Carlo method is applied to model a cold flow of xenon gas expanding from a Hall thruster into...a vacuum chamber. The simulations are performed for the P5 Hall thruster operating in a large vacuum tank at the University of Michigan. Comparison

Titanium diboride ceramic fiber composites for Hall-Heroult cells

DOEpatents

Besmann, Theodore M.; Lowden, Richard A.

1990-01-01

An improved cathode structure for Hall-Heroult cells for the electrolytic production of aluminum metal. This cathode structure is a preform fiber base material that is infiltrated with electrically conductive titanium diboride using chemical vapor infiltration techniques. The structure exhibits good fracture toughness, and is sufficiently resistant to attack by molten aluminum. Typically, the base can be made from a mat of high purity silicon carbide fibers. Other ceramic or carbon fibers that do not degrade at temperatures below about 1000 deg. C can be used.

Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

NASA Astrophysics Data System (ADS)

Jarad, Amer N.; Ibrahim, Kamarulazizi; Ahmed, Nasser M.

2016-07-01

In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10-5 (Ω.cm)-1, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

Robert B. Laughlin and the Fractional Quantum Hall Effect

Science.gov Websites

dropdown arrow Site Map A-Z Index Menu Synopsis Robert B. Laughlin and the Fractional Quantum Hall Effect Tsui discovered the effect. In 1983, Laughlin, then at the Lawrence Livermore National Laboratory , provided the theoretical explanation of the effect in terms of fractionally charged particles. It was a

Observation of the quantum Hall effect in δ-doped SrTiO3

PubMed Central

Matsubara, Y.; Takahashi, K. S.; Bahramy, M. S.; Kozuka, Y.; Maryenko, D.; Falson, J.; Tsukazaki, A.; Tokura, Y.; Kawasaki, M.

2016-01-01

The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO3 has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO3-two-dimensional electron system, fabricated by metal organic molecular-beam epitaxy. The quantized Hall plateaus are found to be solely stemming from the low Landau levels with even integer-filling factors, ν=4 and 6 without any contribution from odd ν's. For ν=4, the corresponding plateau disappears on decreasing the carrier density. Such peculiar behaviours are proposed to be due to the crossing between the Landau levels originating from the two subbands composed of d orbitals with different effective masses. Our findings pave a way to explore unprecedented quantum phenomena in d-electron systems. PMID:27228903

Spin injection and detection via the anomalous spin Hall effect of a ferromagnetic metal

NASA Astrophysics Data System (ADS)

Das, K. S.; Schoemaker, W. Y.; van Wees, B. J.; Vera-Marun, I. J.

2017-12-01

We report a spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the ASHE and its reciprocal effect to electrically inject and detect magnons in a magnetic insulator (yttrium iron garnet) in a nonlocal geometry. Our experiments reveal that permalloy has a comparable spin injection and detection efficiency to that of platinum, owing to the ASHE. We also demonstrate the tunability of the ASHE via the orientation of the permalloy magnetization, thus creating possibilities for spintronic applications.

Peer associations for substance use and exercise in a college student social network.

PubMed

Barnett, Nancy P; Ott, Miles Q; Rogers, Michelle L; Loxley, Michelle; Linkletter, Crystal; Clark, Melissa A

2014-10-01

Substance use and exercise have opposite trajectories in young adulthood, and research indicates that peers are influential for both of these health behaviors, but simultaneous investigations of peer associations with substance use and exercise have not been conducted. Use a college residence hall peer network to examine associations between peer behaviors and alcohol use, marijuana use, and exercise behavior. 129 undergraduates (51.9% female, 48.1% non-Hispanic White; 84.5% first-year students) in one residence hall completed a Web-based survey of substance use and exercise and identified up to 10 students in the residence hall who were important to them. Two social network analytic methods, community detection cluster analysis and network autocorrelation modeling, were used to identify peer groupings and to examine the associations between peer and participant behaviors, respectively. Participants nominated an average of 4.1 residence hall members, and 53.9% of the ties were reciprocal. 6 clusters were identified that differed significantly on demographics, college activities, substance use, and exercise. Weekly volume of alcohol consumed among nominated peers was significantly associated with that of participants, and all other covariates, including gender and athlete status, were not significant. Peer marijuana use also was associated with participant use after controlling for covariates. Exercise levels of nominated peers were not associated with exercise levels of participants. College student networks may be good targets for health-related prevention programs. Programs that use close-proximity peers to influence the behavior of others might be more effective with substance use as the target behavior than exercise.

RHETT and SCARLET: Synergistic power and propulsion technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allen, D.M.; Curran, F.M.; Sankovic, J.

1995-12-31

The Ballistic Missile Defense Organization (BMDO) sponsors an aggressive program to qualify high performance space power and electric propulsion technologies for space flight. Specifically, the BMDO space propulsion program is now integrating an advanced Hall thruster system including all components necessary for use in an operational spacecraft. This Russian Hall Effect Thruster Technology (RHETT) integrated pallet will be qualified for space flight later this year. This will be followed by a space flight demonstration and verification in 1996. The BMDO power program includes a parallel program to qualify and space flight demonstrate the Solar Concentrator Arrays with Refractive Linear Elementmore » Technology (SCARLET). The first flight SCARLET system is being fabricated for Use on the EER/CTA Comet spacecraft in late July. The space flight demonstration is the first full size, deployed concentrator solar array. The propulsion work is conducted by an industry team led by Space Power, Inc. and Olin Aerospace with their partners in Russia, NIITP and TsNIIMash. The power program is conducted by an industry team led by AEC-Able. This paper is to familiarize the space power community with the synergies between spacecraft power and electric propulsion.« less

Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator

NASA Astrophysics Data System (ADS)

Singh, Rahul; Shukla, K. K.; Kumar, A.; Okram, G. S.; Singh, D.; Ganeshan, V.; Lakhani, Archana; Ghosh, A. K.; Chatterjee, Sandip

2016-09-01

Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

Results of duct area ratio changes in the NASA Lewis H2-O2 combustion MHD experiment

NASA Technical Reports Server (NTRS)

Smith, J. M.

1979-01-01

MHD power generation experiments utilizing a cesium-seeded H2-O2 working fluid were carried out using a diverging area Hall duct having an entrance Mach number of 2. The experiments were conducted in a high field strength cryomagnet facility at field strengths up to 5 tesla. The effects of power takeoff location, generator loading B field strength, and electrode breakdown voltage were investigated. The effect of area ratio, multiple loading of the duct, and duct location within the magnetic field are considered.

Theory of the disordered ν =5/2 quantum thermal Hall state: Emergent symmetry and phase diagram

NASA Astrophysics Data System (ADS)

Lian, Biao; Wang, Juven

2018-04-01

Fractional quantum Hall (FQH) system at Landau level filling fraction ν =5 /2 has long been suggested to be non-Abelian, either Pfaffian (Pf) or antiPfaffian (APf) states by numerical studies, both with quantized Hall conductance σx y=5 e2/2 h . Thermal Hall conductances of the Pf and APf states are quantized at κx y=7 /2 and κx y=3 /2 , respectively, in a proper unit. However, a recent experiment shows the thermal Hall conductance of ν =5 /2 FQH state is κx y=5 /2 . It has been speculated that the system contains random Pf and APf domains driven by disorders, and the neutral chiral Majorana modes on the domain walls may undergo a percolation transition to a κx y=5 /2 phase. In this paper, we do perturbative and nonperturbative analyses on the domain walls between Pf and APf. We show the domain wall theory possesses an emergent SO(4) symmetry at energy scales below a threshold Λ1, which is lowered to an emergent U (1 )×U (1) symmetry at energy scales between Λ1 and a higher value Λ2, and is finally lowered to the composite fermion parity symmetry Z2F above Λ2. Based on the emergent symmetries, we propose a phase diagram of the disordered ν =5 /2 FQH system and show that a κx y=5 /2 phase arises at disorder energy scales Λ >Λ1 . Furthermore, we show the gapped double-semion sector of ND compact domain walls contributes nonlocal topological degeneracy 2ND-1, causing a low-temperature peak in the heat capacity. We implement a nonperturbative method to bootstrap generic topological 1 +1 D domain walls (two-surface defects) applicable to any 2 +1 D non-Abelian topological order. We also identify potentially relevant spin topological quantum field theories (TQFTs) for various ν =5 /2 FQH states in terms of fermionic version of U (1) ±8 Chern-Simons theory ×Z8 -class TQFTs.

Towards Thermal Reading of Magnetic States in Hall Crosses

NASA Astrophysics Data System (ADS)

Xu, Y.; Petit-Watelot, S.; Polewczyk, V.; Parent, G.; Montaigne, F.; Wegrowe, J.-E.; Mangin, S.; Lacroix, D.; Hehn, M.; Lacour, D.

2018-03-01

The 3 ω method is a standard way to measure the thermal conductivity of thin films. In this study, we apply the method to read the magnetic state of a perpendicularly magnetized CoTb ferrimagnetic Hall cross using a thermal excitation. In order to generate the thermal excitation, an oscillating current at an ω frequency is applied to the Hall cross using different geometries. The magnetic signals oscillating at ω , 2 ω , and 3 ω are probed using a lock-in technique. From the analysis of the power dependence, we can attribute the 3 ω response to the temperature oscillation and the 2 ω to the temperature-gradient oscillation. Finally, the frequency dependence of the magnetic signals can be understood by considering the heat diffusion in a two-dimensional model.

Sputtering Erosion Measurement on Boron Nitride as a Hall Thruster Material

NASA Technical Reports Server (NTRS)

Britton, Melissa; Waters, Deborah; Messer, Russell; Sechkar, Edward; Banks, Bruce

2002-01-01

The durability of a high-powered Hall thruster may be limited by the sputter erosion resistance of its components. During normal operation, a small fraction of the accelerated ions will impact the interior of the main discharge channel, causing its gradual erosion. A laboratory experiment was conducted to simulate the sputter erosion of a Hall thruster. Tests of sputter etch rate were carried out using 300 to 1000 eV Xenon ions impinging on boron nitride substrates with angles of attack ranging from 30 to 75 degrees from horizontal. The erosion rates varied from 3.41 to 14.37 Angstroms/[sec(mA/sq cm)] and were found to depend on the ion energy and angle of attack, which is consistent with the behavior of other materials.

Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

NASA Astrophysics Data System (ADS)

Hung, Yu-Ming

This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (<1 nm) perpendicularly magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then demonstrate the device operation by using micromagnetic modeling which involves studying the magnetic coupling induced by fringe fields from chiral DWs in perpendicularly magnetized nanowires. The last part of my thesis project reports spin transport and spin-Hall magnetoresistance (SMR) in yttrium iron garnet Y3Fe5O 12 (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers.

Probing bulk physics in the 5/2 fractional quantum Hall effect using the Corbino geometry

NASA Astrophysics Data System (ADS)

Schmidt, Benjamin; Bennaceur, Keyan; Bilodeau, Simon; Gaucher, Samuel; Lilly, Michael; Reno, John; Pfeiffer, Loren; West, Ken; Reulet, Bertrand; Gervais, Guillaume

We present two- and four-point Corbino geometry transport measurements in the second Landau level in GaAs/AlGaAs heterostructures. By avoiding edge transport, we are able to directly probe the physics of the bulk quasiparticles in fractional quantum Hall (FQH) states including 5/2. Our highest-quality sample shows stripe and bubble phases in high Landau levels, and most importantly well-resolved FQH minima in the second Landau level. We report Arrhenius-type fits to the activated conductance, and find that σ0 agrees well with theory and existing Hall geometry data in the first Landau level, but not in the second Landau level. We will discuss the advantages the Corbino geometry could bring to various experiments designed to detect the non-Abelian entropy at 5/2, and our progress towards realizing those schemes. The results of these experiments could complement interferometry and other edge-based measurements by providing direct evidence for non-Abelian behaviour of the bulk quasiparticles. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL8500.

Anomalous DC Hall response in noncentrosymmetric tilted Weyl semimetals

NASA Astrophysics Data System (ADS)

Mukherjee, S. P.; Carbotte, J. P.

2018-03-01

Weyl nodes come in pairs of opposite chirality. For broken time reversal symmetry (TR) they are displaced in momentum space by {Q} and the anomalous DC Hall conductivity σxy is proportional to {Q} at charge neutrality. For finite doping there are additive corrections to σxy which depend on the chemical potential as well as on the tilt (C ) of the Dirac cones and on their relative orientation. If inversion symmetry (I) is also broken the Weyl nodes are shifted in energy by an amount Q0 . This introduces further changes in σxy and we provide simple analytic formulas for these modifications for both type I (C<1 ) and type II (C>1 , overtilted) Weyl. For type I when the Weyl nodes have equal magnitude but oppositely directed tilts, the correction to σxy is proportional to the chemical potential μ and completely independent of the energy shift Q0 . When instead the tilts are parallel, the correction is linear in Q0 and μ drops out. For type II the corrections involve both μ and Q0 , are nonlinear and also involve a momentum cut off. We discuss the implied changes to the Nernst coefficient and to the thermal Hall effect of a finite Q0 .

Conducting wall Hall thrusters in magnetic shielding and standard configurations

NASA Astrophysics Data System (ADS)

Grimaud, Lou; Mazouffre, Stéphane

2017-07-01

Traditional Hall thrusters are fitted with boron nitride dielectric discharge channels that confine the plasma discharge. Wall properties have significant effects on the performances and stability of the thrusters. In magnetically shielded thrusters, interactions between the plasma and the walls are greatly reduced, and the potential drop responsible for ion acceleration is situated outside the channel. This opens the way to the utilization of alternative materials for the discharge channel. In this work, graphite walls are compared to BN-SiO2 walls in the 200 W magnetically shielded ISCT200-MS and the unshielded ISCT200-US Hall thrusters. The magnetically shielded thruster shows no significant change in the discharge current mean value and oscillations, while the unshielded thruster's discharge current increases by 25% and becomes noticeably less stable. The electric field profile is also investigated through laser spectroscopy, and no significant difference is recorded between the ceramic and graphite cases for the shielded thruster. The unshielded thruster, on the other hand, has its acceleration region shifted 15% of the channel length downstream. Lastly, the plume profile is measured with planar probes fitted with guard rings. Once again the material wall has little influence on the plume characteristics in the shielded thruster, while the unshielded one is significantly affected.

Emergence of nontrivial magnetic excitations in a spin-liquid state of kagomé volborthite

PubMed Central

Watanabe, Daiki; Sugii, Kaori; Shimozawa, Masaaki; Suzuki, Yoshitaka; Yajima, Takeshi; Ishikawa, Hajime; Hiroi, Zenji; Shibauchi, Takasada; Matsuda, Yuji; Yamashita, Minoru

2016-01-01

When quantum fluctuations destroy underlying long-range ordered states, novel quantum states emerge. Spin-liquid (SL) states of frustrated quantum antiferromagnets, in which highly correlated spins fluctuate down to very low temperatures, are prominent examples of such quantum states. SL states often exhibit exotic physical properties, but the precise nature of the elementary excitations behind such phenomena remains entirely elusive. Here, we use thermal Hall measurements that can capture the unexplored property of the elementary excitations in SL states, and report the observation of anomalous excitations that may unveil the unique features of the SL state. Our principal finding is a negative thermal Hall conductivity κxy which the charge-neutral spin excitations in a gapless SL state of the 2D kagomé insulator volborthite Cu3V2O7(OH)2⋅2H2O exhibit, in much the same way in which charged electrons show the conventional electric Hall effect. We find that κxy is absent in the high-temperature paramagnetic state and develops upon entering the SL state in accordance with the growth of the short-range spin correlations, demonstrating that κxy is a key signature of the elementary excitation formed in the SL state. These results suggest the emergence of nontrivial elementary excitations in the gapless SL state which feel the presence of fictitious magnetic flux, whose effective Lorentz force is found to be less than 1/100 of the force experienced by free electrons. PMID:27439874

Resistive tearing instability in electron MHD: application to neutron star crusts

NASA Astrophysics Data System (ADS)

Gourgouliatos, Konstantinos N.; Hollerbach, Rainer

2016-12-01

We study a resistive tearing instability developing in a system evolving through the combined effect of Hall drift in the electron magnetohydrodynamic limit and Ohmic dissipation. We explore first the exponential growth of the instability in the linear case and we find the fastest growing mode, the corresponding eigenvalues and dispersion relation. The instability growth rate scales as γ ∝ B2/3σ-1/3, where B is the magnetic field and σ the electrical conductivity. We confirm the development of the tearing resistive instability in the fully non-linear case, in a plane-parallel configuration where the magnetic field polarity reverses, through simulations of systems initiating in Hall equilibrium with some superimposed perturbation. Following a transient phase, during which there is some minor rearrangement of the magnetic field, the perturbation grows exponentially. Once the instability is fully developed, the magnetic field forms the characteristic islands and X-type reconnection points, where Ohmic decay is enhanced. We discuss the implications of this instability for the local magnetic field evolution in neutron stars' crusts, proposing that it can contribute to heating near the surface of the star, as suggested by models of magnetar post-burst cooling. In particular, we find that a current sheet a few metres thick, covering as little as 1 per cent of the total surface, can provide 1042 erg in thermal energy within a few days. We briefly discuss applications of this instability in other systems where the Hall effect operates such as protoplanetary discs and space plasmas.

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

NASA Astrophysics Data System (ADS)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Global multifluid simulations of the magnetorotational instability in radially stratified protoplanetary discs

NASA Astrophysics Data System (ADS)

Rodgers-Lee, D.; Ray, T. P.; Downes, T. P.

2016-11-01

The redistribution of angular momentum is a long standing problem in our understanding of protoplanetary disc (PPD) evolution. The magnetorotational instability (MRI) is considered a likely mechanism. We present the results of a study involving multifluid global simulations including Ohmic dissipation, ambipolar diffusion and the Hall effect in a dynamic, self-consistent way. We focus on the turbulence resulting from the non-linear development of the MRI in radially stratified PPDs and compare with ideal magnetohydrodynamics simulations. In the multifluid simulations, the disc is initially set up to transition from a weak Hall-dominated regime, where the Hall effect is the dominant non-ideal effect but approximately the same as or weaker than the inductive term, to a strong Hall-dominated regime, where the Hall effect dominates the inductive term. As the simulations progress, a substantial portion of the disc develops into a weak Hall-dominated disc. We find a transition from turbulent to laminar flow in the inner regions of the disc, but without any corresponding overall density feature. We introduce a dimensionless parameter, αRM, to characterize accretion with αRM ≳ 0.1 corresponding to turbulent transport. We calculate the eddy turnover time, teddy, and compared this with an effective recombination time-scale, trcb, to determine whether the presence of turbulence necessitates non-equilibrium ionization calculations. We find that trcb is typically around three orders of magnitude smaller than teddy. Also, the ionization fraction does not vary appreciably. These two results suggest that these multifluid simulations should be comparable to single-fluid non-ideal simulations.

AC transport in p-Ge/GeSi quantum well in high magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.

2014-08-20

The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shownmore » that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.« less

Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

NASA Astrophysics Data System (ADS)

Hiramatsu, Hidenori; Ueda, Kazushige; Ohta, Hiromichi; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2003-02-01

Epitaxial films of LaCuOS1-xSex (x=0-1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of ˜50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm2V-1s-1 in LaCuOSe, a comparable value to that of p-type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2×1020 cm-3, while maintaining the Hall mobility as large as 4.0 cm2V-1s-1. Consequently, a degenerate p-type electrical conduction with a conductivity of 140 S cm-1 was achieved.

Macroscopic Quantum Phase-Locking Model for the Quantum Hall = Effect

NASA Astrophysics Data System (ADS)

Wang, Te-Chun; Gou, Yih-Shun

1997-08-01

A macroscopic model of nonlinear dissipative phase-locking between a Josephson-like frequency and a macroscopic electron wave frequency is proposed to explain the Quantum Hall Effect. It is well known that a r.f-biased Josephson junction displays a collective phase-locking behavior which can be described by a non-autonomous second order equation or an equivalent 2+1-dimensional dynamical system. Making a direct analogy between the QHE and the Josephson system, this report proposes a computer-solving nonlinear dynamical model for the quantization of the Hall resistance. In this model, the Hall voltage is assumed to be proportional to a Josephson-like frequency and the Hall current is assumed related to a coherent electron wave frequency. The Hall resistance is shown to be quantized in units of the fine structure constant as the ratio of these two frequencies are locked into a rational winding number. To explain the sample-width dependence of the critical current, the 2DEG under large applied current is further assumed to develop a Josephson-like junction array in which all Josephson-like frequencies are synchronized. Other remarkable features of the QHE such as the resistance fluctuation and the even-denominator states are also discussed within this picture.

Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi 2Te 3 topological insulator thin films

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2016-07-01

Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi 2Te 3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi 2Te 3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor.more » The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi 2Te 3 with the previously studied Mn-doped Bi 2Te 3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.« less

Large quasiparticle thermal Hall conductivity in the superconductor Ba1-xKxFe2As2

NASA Astrophysics Data System (ADS)

Checkelsky, Joseph; Li, Lu; Chen, G. F.; Luo, J. L.; Wang, N. L.; Ong, N. P.

2009-03-01

We have measured the thermal conductivity κxx and thermal Hall conductivity κxy in single-crystal Ba1-xKxFe2As2. Below the superconducting transition temperature Tc (˜ 30 K), we observe a large peak in the weak-field κxy . A corresponding peak in the zero-field thermal conductivity κxx is also observed. Together, these imply the existence of a large population of hole-like quasiparticles below Tc . In magnetic fields H approaching 35 T, the peaks in κxx are strongly suppressed. A fit of the κxx vs. H curves shows that the data are consistent with the scattering of long-lived quasiparticles by vortices. Using these fits, we have extracted estimates of the quasiparticle mean-free-path, and separated the zero-field electronic and phononic terms κe and κph, respectively. We discuss the origin of the large quasiparticle population in terms a strongly anisotropic gap parameter or a gap with nodes.

Domain wall in a quantum anomalous Hall insulator as a magnetoelectric piston

NASA Astrophysics Data System (ADS)

Upadhyaya, Pramey; Tserkovnyak, Yaroslav

2016-07-01

We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall insulator with a magnetic configuration of a domain wall, when contacted by electrical reservoirs, acts as a magnetoelectric piston. A moving domain wall pumps charge current between electrical leads in a closed circuit, while applying an electrical bias induces reciprocal domain-wall motion. This pistonlike action is enabled by a finite reflection of charge carriers via chiral modes imprinted by the domain wall. Moreover, we find that, when compared with the recently discovered spin-orbit torque-induced domain-wall motion in heavy metals, the reflection coefficient plays the role of an effective spin-Hall angle governing the efficiency of the proposed electrical control of domain walls. Quantitatively, this effective spin-Hall angle is found to approach a universal value of 2, providing an efficient scheme to reconfigure the domain-wall chiral interconnects for possible memory and logic applications.

Pt thickness dependence of spin Hall effect switching of in-plane magnetized CoFeB free layers studied by differential planar Hall effect

NASA Astrophysics Data System (ADS)

Mihajlović, G.; Mosendz, O.; Wan, L.; Smith, N.; Choi, Y.; Wang, Y.; Katine, J. A.

2016-11-01

We introduce a differential planar Hall effect method that enables the experimental study of spin orbit torque switching of in-plane magnetized free layers in a simple Hall bar device geometry. Using this method, we study the Pt thickness dependence of switching currents and show that they decrease monotonically down to the minimum experimental thickness of ˜5 nm, while the critical current and power densities are very weakly thickness dependent, exhibiting the minimum values of Jc0 = 1.1 × 108 A/cm2 and ρJc0 2=0.6 ×1012 W/cm 3 at this minimum thickness. Our results suggest that a significant reduction of the critical parameters could be achieved by optimizing the free layer magnetics, which makes this technology a viable candidate for fast, high endurance and low-error rate applications such as cache memories.

Fractional quantum Hall effect in strained graphene: Stability of Laughlin states in disordered pseudomagnetic fields

NASA Astrophysics Data System (ADS)

Bagrov, Andrey A.; Principi, Alessandro; Katsnelson, Mikhail I.

2017-03-01

We address the question of the stability of the fractional quantum Hall effect in the presence of pseudomagnetic disorder generated by mechanical deformations of a graphene sheet. Neglecting the potential disorder and taking into account only strain-induced random pseudomagnetic fields, it is possible to write down a Laughlin-like trial ground-state wave function explicitly. Exploiting the Laughlin plasma analogy, we demonstrate that in the case of fluctuating pseudomagnetic fluxes of a relatively small amplitude, the fractional quantum Hall effect is always stable upon the deformations. By contrast, in the case of bubble-induced pseudomagnetic fields in graphene on a substrate (a small number of large fluxes) the disorder can be strong enough to cause a glass transition in the corresponding classical Coulomb plasma, resulting in the destruction of the fractional quantum Hall regime and in a quantum phase transition to a nonergodic state of the lowest Landau level.

Effective anomalous Hall coefficient in an ultrathin Co layer sandwiched by Pt layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Peng; Wu, Di; Jiang, Zhengsheng

2014-02-14

Anomalous Hall effect in Co/Pt multilayer is important to study the effect of interface with strong spin-orbit coupling. However, the shunting effect of the layers in such system and the circuit in the plane perpendicular to the injected current were overlooked in most works and thus, anomalous Hall coefficient in Co/Pt multilayer has not been determined accurately. Considering the shunting effect and the equivalent circuit, we show that the effective anomalous Hall coefficient of a 0.5 nm thick Co layer sandwiched by Pt layers R{sub S} is 0.29 ± 0.01 μΩ cm/T at the zero temperature limit and increases to about 0.73 μΩ cm/T at the temperaturemore » of 300 K. R{sub S} is one order larger than that in bulk Co film, indicating the large contribution of the Co/Pt interface. R{sub S} increases with the resistivity of Co as well as a resistivity independent contribution of −0.23 ± 0.01 μΩ cm/T. The equivalent anomalous Hall current in the Co layer has a maximum of 1.1% of the injected transverse current in the Co layer around the temperature of 80 K.« less

A highly sensitive CMOS digital Hall sensor for low magnetic field applications.

PubMed

Xu, Yue; Pan, Hong-Bin; He, Shu-Zhuan; Li, Li

2012-01-01

Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.

Scanning hall probe microscopy (SHPM) using quartz crystal AFM feedback.

PubMed

Dede, M; Urkmen, K; Girişen, O; Atabak, M; Oral, A; Farrer, I; Ritchie, D

2008-02-01

Scanning Hall Probe Microscopy (SHPM) is a quantitative and non-invasive technique for imaging localized surface magnetic field fluctuations such as ferromagnetic domains with high spatial and magnetic field resolution of approximately 50 nm and 7 mG/Hz(1/2) at room temperature. In the SHPM technique, scanning tunneling microscope (STM) or atomic force microscope (AFM) feedback is used to keep the Hall sensor in close proximity of the sample surface. However, STM tracking SHPM requires conductive samples; therefore the insulating substrates have to be coated with a thin layer of gold. This constraint can be eliminated with the AFM feedback using sophisticated Hall probes that are integrated with AFM cantilevers. However it is very difficult to micro fabricate these sensors. In this work, we have eliminated the difficulty in the cantilever-Hall probe integration process, just by gluing a Hall Probe chip to a quartz crystal tuning fork force sensor. The Hall sensor chip is simply glued at the end of a 32.768 kHz or 100 kHz Quartz crystal, which is used as force sensor. An LT-SHPM system is used to scan the samples. The sensor assembly is dithered at the resonance frequency using a digital Phase Locked Loop circuit and frequency shifts are used for AFM tracking. SHPM electronics is modified to detect AFM topography and the frequency shift, along with the magnetic field image. Magnetic domains and topography of an Iron Garnet thin film crystal, NdFeB demagnetised magnet and hard disk samples are presented at room temperature. The performance is found to be comparable with the SHPM using STM feedback.

Hall mobility in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

2011-08-01

Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

Free-electron gas at charged domain walls in insulating BaTiO3

PubMed Central

Sluka, Tomas; Tagantsev, Alexander K.; Bednyakov, Petr; Setter, Nava

2013-01-01

Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domain walls are expected. Unlike hetero interfaces, domain walls can be created, displaced, annihilated and recreated inside a functioning device. Theory predicts the existence of 'strongly' charged domain walls that break polarization continuity, but are stable and conduct steadily through a quasi-two-dimensional electron gas. Here we show this phenomenon experimentally in charged domain walls of the prototypical ferroelectric BaTiO3. Their steady metallic-type conductivity, 109 times that of the parent matrix, evidence the presence of stable degenerate electron gas, thus adding mobility to functional interfaces. PMID:23651996

High-Power Hall Thruster Technology Evaluated for Primary Propulsion Applications

NASA Technical Reports Server (NTRS)

Manzella, David H.; Jankovsky, Robert S.; Hofer, Richard R.

2003-01-01

High-power electric propulsion systems have been shown to be enabling for a number of NASA concepts, including piloted missions to Mars and Earth-orbiting solar electric power generation for terrestrial use (refs. 1 and 2). These types of missions require moderate transfer times and sizable thrust levels, resulting in an optimized propulsion system with greater specific impulse than conventional chemical systems and greater thrust than ion thruster systems. Hall thruster technology will offer a favorable combination of performance, reliability, and lifetime for such applications if input power can be scaled by more than an order of magnitude from the kilowatt level of the current state-of-the-art systems. As a result, the NASA Glenn Research Center conducted strategic technology research and development into high-power Hall thruster technology. During program year 2002, an in-house fabricated thruster, designated the NASA-457M, was experimentally evaluated at input powers up to 72 kW. These tests demonstrated the efficacy of scaling Hall thrusters to high power suitable for a range of future missions. Thrust up to nearly 3 N was measured. Discharge specific impulses ranged from 1750 to 3250 sec, with discharge efficiencies between 46 and 65 percent. This thruster is the highest power, highest thrust Hall thruster ever tested.

Rule-based fault diagnosis of hall sensors and fault-tolerant control of PMSM

NASA Astrophysics Data System (ADS)

Song, Ziyou; Li, Jianqiu; Ouyang, Minggao; Gu, Jing; Feng, Xuning; Lu, Dongbin

2013-07-01

Hall sensor is widely used for estimating rotor phase of permanent magnet synchronous motor(PMSM). And rotor position is an essential parameter of PMSM control algorithm, hence it is very dangerous if Hall senor faults occur. But there is scarcely any research focusing on fault diagnosis and fault-tolerant control of Hall sensor used in PMSM. From this standpoint, the Hall sensor faults which may occur during the PMSM operating are theoretically analyzed. According to the analysis results, the fault diagnosis algorithm of Hall sensor, which is based on three rules, is proposed to classify the fault phenomena accurately. The rotor phase estimation algorithms, based on one or two Hall sensor(s), are initialized to engender the fault-tolerant control algorithm. The fault diagnosis algorithm can detect 60 Hall fault phenomena in total as well as all detections can be fulfilled in 1/138 rotor rotation period. The fault-tolerant control algorithm can achieve a smooth torque production which means the same control effect as normal control mode (with three Hall sensors). Finally, the PMSM bench test verifies the accuracy and rapidity of fault diagnosis and fault-tolerant control strategies. The fault diagnosis algorithm can detect all Hall sensor faults promptly and fault-tolerant control algorithm allows the PMSM to face failure conditions of one or two Hall sensor(s). In addition, the transitions between health-control and fault-tolerant control conditions are smooth without any additional noise and harshness. Proposed algorithms can deal with the Hall sensor faults of PMSM in real applications, and can be provided to realize the fault diagnosis and fault-tolerant control of PMSM.

Effect of azimuthal diversion rail on an ATON-type Hall thruster

NASA Astrophysics Data System (ADS)

Xu, Zhang; Liqiu, Wei; Liang, Han; Yongjie, Ding; Daren, Yu

2017-03-01

A newly designed azimuthal diversion rail (ADR) is studied and used to enhance the ionization process in an ATON-type Hall thruster. The diversion rail efficiently reduces the neutral flow axial velocity, and hence, increases the resistance time of atoms in the discharge channel of the Hall thruster. Thrust performances, in terms of thrust, anode efficiency and ion beam divergence, are found to be improved because of the application of the diversion rail, especially at low mass flow rate conditions. Experiment results reveal that the ADR increases the mass utilization under insufficient mass flow rate operating conditions. The design of the ADR broadens the efficient operating range of Hall thrusters and has significant contribution to multi-mode Hall thruster development.

What do you measure when you measure the Hall effect?

NASA Astrophysics Data System (ADS)

Koon, D. W.; Knickerbocker, C. J.

1993-02-01

A formalism for calculating the sensitivity of Hall measurements to local inhomogeneities of the sample material or the magnetic field is developed. This Hall weighting function g(x,y) is calculated for various placements of current and voltage probes on square and circular laminar samples. Unlike the resistivity weighting function, it is nonnegative throughout the entire sample, provided all probes lie at the edge of the sample. Singularities arise in the Hall weighting function near the current and voltage probes except in the case where these probes are located at the corners of a square. Implications of the results for cross, clover, and bridge samples, and the implications of our results for metal-insulator transition and quantum Hall studies are discussed.

Current Driven Instabilities and Anomalous Mobility in Hall-effect Thrusters

NASA Astrophysics Data System (ADS)

Tran, Jonathan; Eckhardt, Daniel; Martin, Robert

2017-10-01

Due to the extreme cost of fully resolving the Debye length and plasma frequency, hybrid plasma simulations utilizing kinetic ions and quasi-steady state fluid electrons have long been the principle workhorse methodology for Hall-effect thruster (HET) modeling. Plasma turbulence and the resulting anomalous electron transport in HETs is a promising candidate for developing predictive models for the observed anomalous transport. In this work, we investigate the implementation of an anomalous electron cross field transport model for hybrid HET simulations such a HPHall. A theory for anomalous transport in HETs and current driven instabilities has been recently studied by Lafleur et al. This work has shown collective electron-wave scattering due to large amplitude azimuthal fluctuations of the electric field. We will further adapt the previous results for related current driven instabilities to electric propulsion relevant mass ratios and conduct a preliminary study of resolving this instability with a modified hybrid (fluid electron and kinetic ion) simulation with the hope of integration with established hybrid HET simulations. This work is supported by the Air Force Office of Scientific Research award FA9950-17RQCOR465.

Experimental Analysis of Dampened Breathing Mode Oscillation on Hall Thruster Performance

DTIC Science & Technology

2013-03-01

38 4.5 Analysis of Discharge RMS Effect on Breathing Mode Amplitude...20 xii EXPERIMENTAL ANALYSIS OF DAMPENED BREATHING MODE OSCILLATION ON HALL EFFECT THRUSTER...the large error in the data presented above prevents many conclusions from being drawn. 4.5 Analysis of Discharge RMS Effect on Breathing Mode

Electric Conductivity of Hot and Dense Quark Matter in a Magnetic Field with Landau Level Resummation via Kinetic Equations

NASA Astrophysics Data System (ADS)

Fukushima, Kenji; Hidaka, Yoshimasa

2018-04-01

We compute the electric conductivity of quark matter at finite temperature T and a quark chemical potential μ under a magnetic field B beyond the lowest Landau level approximation. The electric conductivity transverse to B is dominated by the Hall conductivity σH. For the longitudinal conductivity σ∥, we need to solve kinetic equations. Then, we numerically find that σ∥ has only a mild dependence on μ and the quark mass mq. Moreover, σ∥ first decreases and then linearly increases as a function of B , leading to an intermediate B region that looks consistent with the experimental signature for the chiral magnetic effect. We also point out that σ∥ at a nonzero B remains within the range of the lattice-QCD estimate at B =0 .

Electric Conductivity of Hot and Dense Quark Matter in a Magnetic Field with Landau Level Resummation via Kinetic Equations.

PubMed

Fukushima, Kenji; Hidaka, Yoshimasa

2018-04-20

We compute the electric conductivity of quark matter at finite temperature T and a quark chemical potential μ under a magnetic field B beyond the lowest Landau level approximation. The electric conductivity transverse to B is dominated by the Hall conductivity σ_{H}. For the longitudinal conductivity σ_{∥}, we need to solve kinetic equations. Then, we numerically find that σ_{∥} has only a mild dependence on μ and the quark mass m_{q}. Moreover, σ_{∥} first decreases and then linearly increases as a function of B, leading to an intermediate B region that looks consistent with the experimental signature for the chiral magnetic effect. We also point out that σ_{∥} at a nonzero B remains within the range of the lattice-QCD estimate at B=0.

Inverse spin Hall effect in a closed loop circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Omori, Y.; Auvray, F.; Wakamura, T.

We present measurements of inverse spin Hall effects (ISHEs), in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.

Hall-Effect Measurements Probing the Degree of Charge-Carrier Delocalization in Solution-Processed Crystalline Molecular Semiconductors

NASA Astrophysics Data System (ADS)

Chang, Jui-Fen; Sakanoue, Tomo; Olivier, Yoann; Uemura, Takafumi; Dufourg-Madec, Marie-Beatrice; Yeates, Stephen G.; Cornil, Jérôme; Takeya, Jun; Troisi, Alessandro; Sirringhaus, Henning

2011-08-01

Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.

Inverse spin Hall and spin rectification effects in NiFe/FeMn exchange-biased thin films

NASA Astrophysics Data System (ADS)

Garcia, W. J. S.; Seeger, R. L.; da Silva, R. B.; Harres, A.

2017-11-01

Materials presenting high spin-orbit coupling are able to convert spin currents in charge currents. The phenomenon, known as inverse spin Hall effect, promises to revolutionize spintronic technology enabling the electrical detection of spin currents. It has been observed in a variety of systems, usually non-magnetic metals. We study the voltage emerging in exchange biased Ta/NiFe/FeMn/Ta thin films near the ferromagnetic resonance. Measured signals are related to both inverse spin Hall and spin rectification effects, and two distinct protocols were employed to separate their contributions.The curve shift due to the exchange bias effect may enable high frequency applications without an external applied magnetic field.

Thermal and electrical transport in metals and superconductors across antiferromagnetic and topological quantum transitions

NASA Astrophysics Data System (ADS)

Chatterjee, Shubhayu; Sachdev, Subir; Eberlein, Andreas

2017-08-01

We study thermal and electrical transport in metals and superconductors near a quantum phase transition where antiferromagnetic order disappears. The same theory can also be applied to quantum phase transitions involving the loss of certain classes of intrinsic topological order. For a clean superconductor, we recover and extend well-known universal results. The heat conductivity for commensurate and incommensurate antiferromagnetism coexisting with superconductivity shows a markedly different doping dependence near the quantum critical point, thus allowing us to distinguish between these states. In the dirty limit, the results for the conductivities are qualitatively similar for the metal and the superconductor. In this regime, the geometric properties of the Fermi surface allow for a very good phenomenological understanding of the numerical results on the conductivities. In the simplest model, we find that the conductivities do not track the doping evolution of the Hall coefficient, in contrast to recent experimental findings. We propose a doping dependent scattering rate, possibly due to quenched short-range charge fluctuations below optimal doping, to consistently describe both the Hall data and the longitudinal conductivities.

High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides.

PubMed

Howard, Dougal P; Marchand, Peter; McCafferty, Liam; Carmalt, Claire J; Parkin, Ivan P; Darr, Jawwad A

2017-04-10

High-throughput continuous hydrothermal flow synthesis was used to generate a library of aluminum and gallium-codoped zinc oxide nanoparticles of specific atomic ratios. Resistivities of the materials were determined by Hall Effect measurements on heat-treated pressed discs and the results collated into a conductivity-composition map. Optimal resistivities of ∼9 × 10 -3 Ω cm were reproducibly achieved for several samples, for example, codoped ZnO with 2 at% Ga and 1 at% Al. The optimum sample on balance of performance and cost was deemed to be ZnO codoped with 3 at% Al and 1 at% Ga.

Establishment of a Hall Thruster Cluster

DTIC Science & Technology

2004-02-01

DURIP funds were used to develop a Hall thruster cluster test facility centered around the University of Michigan Large Vacuum Test Facility and a 2x2 cluster of BUSEK 600 W BHT-600 Hall thrusters. This capability will facilitate our three-year program to address the issue of high-power CDT operation and to provide insight on how chamber effects influence CDT engine/cluster characteristics.

The Effects of Insulator Wall Material on Hall Thruster Discharges: A Numerical Study

DTIC Science & Technology

2001-01-03

An investigation was undertaken to determine how the choice of insulator wall material inside a Hall thruster discharge channel might affect thruster operation. In order to study this, an evolved hybrid particle-in-cell (PIC) numerical Hall thruster model, HPHall, was used. HPHall solves a set of quasi-one-dimensional fluid equations for electrons and tracks heavy particles using a PIC method.

A Comprehensive Investigation of Facility Effects on the Testing of High-Power Monolithic and Clustered Hall Thruster Systems

DTIC Science & Technology

2004-09-02

path for developing high-power EP systems is somewhat certain given NASA’s recent success with its 70+ kW NASA-457M Hall thruster , it is clear that...current density distribution, and summarize findings from cold- and hot-flow pressure map data of our vacuum chamber for a number of Hall thruster mass flow rates.

Spin pumping and inverse spin Hall effects in heavy metal/antiferromagnet/Permalloy trilayers

NASA Astrophysics Data System (ADS)

Saglam, Hilal; Zhang, Wei; Jungfleisch, M. Benjamin; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

Recent work shows efficient spin transfer via spin waves in insulating antiferromagnets (AFMs), suggesting that AFMs can play a more active role in the manipulation of ferromagnets. We use spin pumping and inverse spin Hall effect experiments on heavy metal (Pt and W)/AFMs/Py (Ni80Fe20) trilayer structures, to examine the possible spin transfer phenomenon in metallic AFMs, i . e . , FeMn and PdMn. Previous work has studied electronic effects of the spin transport in these materials, yielding short spin diffusion length on the order of 1 nm. However, the work did not examine whether besides diffusive spin transport by the conduction electrons, there are additional spin transport contributions from spin wave excitations. We clearly observe spin transport from the Py spin reservoir to the heavy metal layer through the sandwiched AFMs with thicknesses well above the previously measured spin diffusion lengths, indicating that spin transport by spin waves may lead to non-negligible contributions This work was supported by US DOE, OS, Materials Sciences and Engineering Division. Lithographic patterning was carried out at the CNM, which is supported by DOE, OS under Contract No. DE-AC02-06CH11357.

Valley Hall effect and Nernst effect in strain engineered graphene

NASA Astrophysics Data System (ADS)

Niu, Zhi Ping; Yao, Jian-ming

2018-04-01

We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.

Giant photonic Hall effect in magnetophotonic crystals.

PubMed

Merzlikin, A M; Vinogradov, A P; Inoue, M; Granovsky, A B

2005-10-01

We have considered a simple, square, two-dimensional (2D) PC built of a magneto-optic matrix with square holes. It is shown that using such a magnetophotonic crystal it is possible to deflect a light beam at very large angles by applying a nonzero external magnetic field. The effect is called the giant photonic Hall effect (GPHE) or the magnetic superprism effect. The GPHE is based on magneto-optical properties, as is the photonic Hall effect [B. A. van Tiggelen and G. L. J. A. Rikken, in, edited by V. M. Shalaev (Springer-Verlag, Berlin, 2002), p. 275]; however GPHE is not caused by asymmetrical light scattering but rather by the influence of an external magnetic field on the photonic band structure.

Sensitivity of resistive and Hall measurements to local inhomogeneities: Finite-field, intensity, and area corrections

NASA Astrophysics Data System (ADS)

Koon, Daniel W.; Wang, Fei; Petersen, Dirch Hjorth; Hansen, Ole

2014-10-01

We derive exact, analytic expressions for the sensitivity of sheet resistance and Hall sheet resistance measurements to local inhomogeneities for the cases of nonzero magnetic fields, strong perturbations, and perturbations over a finite area, extending our earlier results on weak perturbations. We express these sensitivities for conductance tensor components and for other charge transport quantities. Both resistive and Hall sensitivities, for a van der Pauw specimen in a finite magnetic field, are a superposition of the zero-field sensitivities to both sheet resistance and Hall sheet resistance. Strong perturbations produce a nonlinear correction term that depends on the strength of the inhomogeneity. Solution of the specific case of a finite-sized circular inhomogeneity coaxial with a circular specimen suggests a first-order correction for the general case. Our results are confirmed by computer simulations on both a linear four-point probe array on a large circular disc and a van der Pauw square geometry. Furthermore, the results also agree well with Náhlík et al. published experimental results for physical holes in a circular copper foil disc.

Reducing Weekend Litter (and Improving RA-Resident Interactions) in a College Residence Hall.

ERIC Educational Resources Information Center

Luyben, Paul D.; And Others

1984-01-01

Investigated the effectiveness of a litter reduction program, consisting of group assignment of responsibility and a token reward system, on weekend litter rates in college residence halls. Results indicated procedure was completely effective, with litter reduced to zero in all settings. (BL)

Magnetometry of micro-magnets with electrostatically defined Hall bars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lachance-Quirion, Dany; Camirand Lemyre, Julien; Bergeron, Laurent

2015-11-30

Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large currentmore » density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10{sup 3}. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.« less

A Small Modular Laboratory Hall Effect Thruster

NASA Astrophysics Data System (ADS)

Lee, Ty Davis

Electric propulsion technologies promise to revolutionize access to space, opening the door for mission concepts unfeasible by traditional propulsion methods alone. The Hall effect thruster is a relatively high thrust, moderate specific impulse electric propulsion device that belongs to the class of electrostatic thrusters. Hall effect thrusters benefit from an extensive flight history, and offer significant performance and cost advantages when compared to other forms of electric propulsion. Ongoing research on these devices includes the investigation of mechanisms that tend to decrease overall thruster efficiency, as well as the development of new techniques to extend operational lifetimes. This thesis is primarily concerned with the design and construction of a Small Modular Laboratory Hall Effect Thruster (SMLHET), and its operation on argon propellant gas. Particular attention was addressed at low-cost, modular design principles, that would facilitate simple replacement and modification of key thruster parts such as the magnetic circuit and discharge channel. This capability is intended to facilitate future studies of device physics such as anomalous electron transport and magnetic shielding of the channel walls, that have an impact on thruster performance and life. Preliminary results demonstrate SMLHET running on argon in a manner characteristic of Hall effect thrusters, additionally a power balance method was utilized to estimate thruster performance. It is expected that future thruster studies utilizing heavier though more expensive gases like xenon or krypton, will observe increased efficiency and stability.

Nonvolatile random access memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

1994-01-01

A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.

Titanium diboride ceramic fiber composites for Hall-Heroult cells

DOEpatents

Besmann, T.M.; Lowden, R.A.

1990-05-29

An improved cathode structure is described for Hall-Heroult cells for the electrolytic production of aluminum metal. This cathode structure is a preform fiber base material that is infiltrated with electrically conductive titanium diboride using chemical vapor infiltration techniques. The structure exhibits good fracture toughness, and is sufficiently resistant to attack by molten aluminum. Typically, the base can be made from a mat of high purity silicon carbide fibers. Other ceramic or carbon fibers that do not degrade at temperatures below about 1000 C can be used.

Note: Fiber optic transport probe for Hall measurements under light and magnetic field at low temperatures: Case study of a two dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhadauria, P. P. S.; Gupta, Anurag; Kumar, Pramod

2015-05-15

A fiber optic based probe is designed and developed for electrical transport measurements in presence of quasi-monochromatic (360–800 nm) light, varying temperature (T = 1.8–300 K), and magnetic field (B = 0–7 T). The probe is tested for the resistivity and Hall measurements performed on a LaAlO{sub 3}–SrTiO{sub 3} heterointerface system with a conducting two dimensional electron gas.

Chemical and Biological Defense: DOD Needs to Continue to Collect and Provide Information on Tests and Potentially Exposed Personnel

DTIC Science & Technology

2004-05-01

or Naval officer as test director. Ship-based tests were conducted in the open waters of the North Atlantic and Pacific Oceans and near the...BG, FP Oct. 9, 2002 (ship-based) Granville S. Hall and surround- ing waters and airspace A-4, F-105, and an Aero Commander 65-12, Devil Hole I...Apr.-May 1968 USS Carbonero, USS Oahu, Hawaii, BG June 30, 03 Arrow (ship-based) Granville S. Hall and surrounding waters 69-31 (ship-based) 313 Aug

Hall-MHD and PIC Modeling of the Conduction-to-Opening Transition in a Plasma Opening Switch

NASA Astrophysics Data System (ADS)

Schumer, J. W.; SwanekampDdagger, S. B.; Ottinger, P. F.; Commisso, R. J.; Weber, B. V.

1998-11-01

Utilizing the fast opening characteristics of a plasma opening switch (POS), inductive energy storage devices can generate short-duration high-power pulses (<0.1 μ s, >1 TW) with current rise-times on the order of 10 ns. Plasma redistribution and thinning during the POS conduction phase can be modeled adequately with MHD methods. By including the Hall term in Ohm's Law, MHD methods can simulate plasmas with density gradient scale lengths between c/ω_pe < Ln < c/ω_pi. However, the neglect of electron inertia (c/ω_pe) and space-charge separation (λ_De) by single-fluid theory eventually becomes invalid in small gap regions that form during POS opening. PIC methods are well-suited for low-density plasmas, but are numerically taxed by high-density POS regions. An interface converts MHD (Mach2) output into PIC (Magic) input suitable for validating various transition criteria through comparison of current and density distributions from both methods. We will discuss recent progress in interfacing Hall-MHD and PIC simulations. Work supported by Defense Special Weapons Agency. ^ NRL-NRC Research Associate. hspace0.25in ^ JAYCOR, Vienna, VA 22102.

Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

DOE PAGES

Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; ...

2016-03-07

In this paper, we investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. Finally, we also suggest that metallic antiferromagnets may be good candidates for the investigationmore » of various unidirectional effects related to novel spin-orbitronics phenomena.« less

Co-doping of CVD diamond with boron and sulfur

NASA Astrophysics Data System (ADS)

Eaton, Sally Catherine

Boron is well-established as a p-type dopant in diamond, but attempts to find a viable n-type dopant remain unsuccessful. In 1999, sulfur was reported to give n-type conductivity. However, later measurements indicated that the samples contained boron and were p-type. Recently, we showed that diamond co-doped with sulfur and small quantities of boron shows n-type conductivity, which was established by Mott-Schottky analyses, thermoelectric effect, Hall measurements, scanning tunneling spectroscopy (STS), and UV open-circuit photo-potential. At higher boron concentrations, a transition to p-type behavior is observed due to overcompensation. Experiments performed without boron in the feed gas or without residual boron in the reactor chamber showed no sulfur incorporation and no change in conductivity. There is evidence that the excess sulfur concentration in the near-surface region is not stable. At room temperature and below, the activation energies range from 0.06 to 0.12 eV. Above 400K there is an irreversible loss in conductivity and the activation energy increases to approximately 1.3 eV. Additionally, we observed by SIMS that there exists a concentration gradient in sulfur with film depth. This sulfur concentration gradient is also observed in our electrical measurements. STS shows a decrease in conductivity with film depth and Hall effect measurements show both p-type and n-type coefficients for samples which are n-type in the near-surface region. The flat-band potential obtained from the Mott-Schottky experiments is only 1 to 1.5 V more negative on the electrochemical scale than that for boron-doped diamond. This implies that the Fermi level is only 1 to 1.5 eV higher than the Fermi level in boron-doped diamond. This observation implies that the n-type conductivity is not by excitation of electrons to the conduction band, but by an alternate mechanism that occurs in the middle of the band gap. One such possibility is an acceptor impurity band. Electrons from individual donor states can be excited into this acceptor band where they are free to move. This mechanism would create n-type conductivity even if the Fermi level was low in the bandgap.

Magnetic Reconnection and Modification of the Hall Physics Due to Cold Ions at the Magnetopause

NASA Technical Reports Server (NTRS)

Andre, M.; Li, W.; Toldeo-Redondo, S.; Khotyaintsev, Yu. V.; Vaivads, A.; Graham, D. B.; Norgren, C.; Burch, J.; Lindqvist, P.-A.; Marklund, G.;

The influence of additives on Hall-Héroult bath properties

NASA Astrophysics Data System (ADS)

Haupin, Warren

1991-11-01

Molten cryolite is the main ingredient of the Hall-Héroult electrolyte. Additives are used to improve its chemical and physical properties. The ideal additive should decrease the solubility of reduced species in the melt and lower the liquidus temperature for improved Faradaic efficiency. It should increase, or at least not decrease, alumina solubility; increase electrical conductivity for better power efficiency; decrease density to provide better separation between the aluminum and the molten salt, and decrease vapor pressure to minimize fluoride loss. It should neither contain nor produce an ionic species with a lower discharge potential than aluminum (for the cation) or oxygen (for the anion). There is no ideal additive; hence, compromises are made. Alumina solubility and electrical conductivity are often sacrificed for improved Faradaic efficiency.

Improved Writing-Conductor Designs For Magnetic Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1994-01-01

Writing currents reduced to practical levels. Improved conceptual designs for writing conductors in micromagnet/Hall-effect random-access integrated-circuit memory reduces electrical current needed to magnetize micromagnet in each memory cell. Basic concept of micromagnet/Hall-effect random-access memory presented in "Magnetic Analog Random-Access Memory" (NPO-17999).

Fractional Quantization of the Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-02-27

The Fractional Quantum Hall Effect is caused by the condensation of a two-dimensional electron gas in a strong magnetic field into a new type of macroscopic ground state, the elementary excitations of which are fermions of charge 1/m, where m is an odd integer. A mathematical description is presented.

Magnon Spin Nernst Effect in Antiferromagnets.

PubMed

Zyuzin, Vladimir A; Kovalev, Alexey A

2016-11-18

We predict that a temperature gradient can induce a magnon-mediated spin Hall response in an antiferromagnet with nontrivial magnon Berry curvature. We develop a linear response theory which gives a general condition for a Hall current to be well defined, even when the thermal Hall response is forbidden by symmetry. We apply our theory to a honeycomb lattice antiferromagnet and discuss a role of magnon edge states in a finite geometry.

Low-Cost, High-Performance Hall Thruster Support System

NASA Technical Reports Server (NTRS)

Hesterman, Bryce

2015-01-01

Colorado Power Electronics (CPE) has built an innovative modular PPU for Hall thrusters, including discharge, magnet, heater and keeper supplies, and an interface module. This high-performance PPU offers resonant circuit topologies, magnetics design, modularity, and a stable and sustained operation during severe Hall effect thruster current oscillations. Laboratory testing has demonstrated discharge module efficiency of 96 percent, which is considerably higher than current state of the art.

Magnon Spin Nernst Effect in Antiferromagnets

NASA Astrophysics Data System (ADS)

Zyuzin, Vladimir A.; Kovalev, Alexey A.

2016-11-01

We predict that a temperature gradient can induce a magnon-mediated spin Hall response in an antiferromagnet with nontrivial magnon Berry curvature. We develop a linear response theory which gives a general condition for a Hall current to be well defined, even when the thermal Hall response is forbidden by symmetry. We apply our theory to a honeycomb lattice antiferromagnet and discuss a role of magnon edge states in a finite geometry.

Controlling the anomalous Hall effect by electric-field-induced piezo-strain in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Yang, Yuanjun; Yao, Yingxue; Chen, Lei; Huang, Haoliang; Zhang, Benjian; Lin, Hui; Luo, Zhenlin; Gao, Chen; Lu, Y. L.; Li, Xiaoguang; Xiao, Gang; Feng, Ce; Zhao, Y. G.

2018-01-01

Electric-field control of the anomalous Hall effect (AHE) was investigated in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 (FePt/PMN-PT) multiferroic heterostructures at room temperature. It was observed that a very large Hall resistivity change of up to 23.9% was produced using electric fields under a magnetic field bias of 100 Oe. A pulsed electric field sequence was used to generate nonvolatile strain to manipulate the Hall resistivity. Two corresponding nonvolatile states with distinct Hall resistivities were achieved after the electric fields were removed, thus enabling the encoding of binary information for memory applications. These results demonstrate that the Hall resistivity can be reversibly switched in a nonvolatile manner using programmable electric fields. Two remanent magnetic states that were created by electric-field-induced piezo-strain from the PMN-PT were attributed to the nonvolatile and reversible properties of the AHE. This work suggests that a low-energy-consumption-based approach can be used to create nonvolatile resistance states for spintronic devices based on electric-field control of the AHE.

Factors Affecting Fish Production and Fishing Quality in New Reservoirs, with Guidance on Timber Clearing, Basin Preparation, and Filling.

DTIC Science & Technology

1981-08-01

by Hall et al. (1946). Yeager (1949), who also conducted an extensive study of flooding effects on different species of trees , noted that virtually... species in Illinois, suggested setting a limit of 30 days’ inundation during spring and summer to ensure survival of all trees around reservoir margins...considered were tree species and size; submersion type (total, partial, or soil saturation); time of year (dormant or growing seasons); and duration of

Nonadiabatic Berry phase in nanocrystalline magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skomski, R.; Sellmyer, D. J.

2016-12-20

In this study, it is investigated how a Berry phase is created in polycrystalline nanomagnets and how the phase translates into an emergent magnetic field and into a topological Hall-effect contribution. The analysis starts directly from the spin of the conduction electrons and does not involve any adiabatic Hamiltonian. Completely random spin alignment in the nanocrystallites does not lead to a nonzero emergent field, but a modulation of the local magnetization does. As an explicit example, we consider a wire with a modulated cone angle.

The shear-Hall instability in newborn neutron stars

NASA Astrophysics Data System (ADS)

Kondić, T.; Rüdiger, G.; Hollerbach, R.

2011-11-01

Aims: In the first few minutes of a newborn neutron star's life the Hall effect and differential rotation may both be important. We demonstrate that these two ingredients are sufficient for generating a "shear-Hall instability" and for studying its excitation conditions, growth rates, and characteristic magnetic field patterns. Methods: We numerically solve the induction equation in a spherical shell, with a kinematically prescribed differential rotation profile Ω(s), where s is the cylindrical radius. The Hall term is linearized about an imposed uniform axial field. The linear stability of individual azimuthal modes, both axisymmetric and non-axisymmetric, is then investigated. Results: For the shear-Hall instability to occur, the axial field must be parallel to the rotation axis if Ω(s) decreases outward, whereas if Ω(s) increases outward it must be anti-parallel. The instability draws its energy from the differential rotation, and occurs on the short rotational timescale rather than on the much longer Hall timescale. It operates most efficiently if the Hall time is comparable to the diffusion time. Depending on the precise field strengths B0, either axisymmetric or non-axisymmetric modes may be the most unstable. Conclusions: Even if the differential rotation in newborn neutron stars is quenched within minutes, the shear-Hall instability may nevertheless amplify any seed magnetic fields by many orders of magnitude.

Beyond the Quantum Hall Effect: New Phases of 2D Electrons at High Magnetic Field

NASA Astrophysics Data System (ADS)

Eisenstein, James

2007-03-01

In this talk I will discuss recent experiments on high mobility single and double layer 2D electron systems in which collective phases lying outside the usual quantum Hall effect paradigm have been detected and studied. For example, in single layer 2D systems near half-filling of highly excited Landau levels new states characterized by a massive anisotropy in the electrical resistivity of the sample are observed at very low temperature. The anisotropy has been widely interpreted as the signature of a new class of correlated electron phases which incorporate a stripe-like charge density modulation. Orientational ordering of small striped domains at low temperatures accounts for the resistive anisotropy and is reminiscent of the isotropic-to-nematic phase transition in classical liquid crystals. Double layer 2D electron systems possess collective phases not present in single layer systems. In particular, when the total number of electrons in the bilayer equals the degeneracy of a single Landau level, an unusual phase appears at small layer separation. This phase possesses a novel broken symmetry, spontaneous interlayer phase coherence, which has a number of dramatic experimental signatures. The interlayer tunneling conductance develops a strong and very sharp resonance around zero bias resembling the dc Josephson effect. At the same time, both the longitudinal and Hall resistances of the sample vanish at low temperatures when currents are driven in opposite directions through the two layers. These, and other observations are broadly consistent with theories in which the broken symmetry phase can equivalently be described as a pseudospin ferromagnet or an (imperfect) excitonic superfluid. This work reflects a collaboration with M.P. Lilly, K.B. Cooper, I.B. Spielman, M. Kellogg, L.A. Tracy, L.N. Pfeiffer, and K.W. West.

Holographic Floquet states I: a strongly coupled Weyl semimetal

NASA Astrophysics Data System (ADS)

Hashimoto, Koji; Kinoshita, Shunichiro; Murata, Keiju; Oka, Takashi

2017-05-01

Floquet states can be realized in quantum systems driven by continuous time-periodic perturbations. It is known that a state known as the Floquet Weyl semimetal can be realized when free Dirac fermions are placed in a rotating electric field. What will happen if strong interaction is introduced to this system? Will the interaction wash out the characteristic features of Weyl semimetals such as the Hall response? Is there a steady state and what is its thermodynamic behavior? We answer these questions using AdS/CFT correspondence in the N = 2 supersymmetric massless QCD in a rotating electric field in the large N c limit realizing the first example of a "holographic Floquet state". In this limit, gluons not only mediate interaction, but also act as an energy reservoir and stabilize the nonequilibrium steady state (NESS). We obtain the electric current induced by a rotating electric field: in the high frequency region, the Ohm's law is satisfied, while we recover the DC nonlinear conductivity at low frequency, which was obtained holographically in a previous work. The thermodynamic properties of the NESS, e.g., fluctuation-dissipation relation, is characterized by the effective Hawking temperature that is defined from the effective horizon giving a holographic meaning to the "periodic thermodynamic" concept. In addition to the strong (pump) rotating electric field, we apply an additional weak (probe) electric field in the spirit of the pump-probe experiments done in condensed matter experiments. Weak DC and AC probe analysis in the background rotating electric field shows Hall currents as a linear response, therefore the Hall response of Floquet Weyl semimetals survives at the strong coupling limit. We also find frequency mixed response currents, i.e., a heterodyning effect, characteristic to periodically driven Floquet systems.

Tuning the stability and the skyrmion Hall effect in magnetic skyrmions by adjusting their exchange strengths with magnetic disks

NASA Astrophysics Data System (ADS)

Sun, L.; Wu, H. Z.; Miao, B. F.; Wu, D.; Ding, H. F.

2018-06-01

Magnetic skyrmion is a promising candidate for the future information technology due to its small size, topological protection and the ultralow current density needed to displace it. The applications, however, are currently limited by its narrow phase diagram and the skyrmion Hall effect which prevents the skyrmion motion at high speed. In this work, we study the Dzyaloshinskii-Moriya interaction induced magnetic skyrmion that exchange coupled with magnetic nano-disks utilizing the micromagnetic simulation. We find that the stability and the skyrmion Hall effect of the created skyrmion can be tuned effectively with the coupling strength, thus opens the space to optimize the performance of the skyrmion based devices.

High magnetic field test of bismuth Hall sensors for ITER steady state magnetic diagnostic.

PubMed

Ďuran, I; Entler, S; Kohout, M; Kočan, M; Vayakis, G

2016-11-01

Performance of bismuth Hall sensors developed for the ITER steady state magnetic diagnostic was investigated for high magnetic fields in the range ±7 T. Response of the sensors to the magnetic field was found to be nonlinear particularly within the range ±1 T. Significant contribution of the planar Hall effect to the sensors output voltage causing undesirable cross field sensitivity was identified. It was demonstrated that this effect can be minimized by the optimization of the sensor geometry and alignment with the magnetic field and by the application of "current-spinning technique."

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laczkowski, P.; Rojas-Sánchez, J.-C.; INAC/SP2M, CEA-Université Joseph Fourier, F-38054 Grenoble

2014-04-07

We report an experimental study of a gold-tungsten alloy (7 at. % W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity, and small induced damping, this AuW alloy may find applications in the nearest future.

Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB 4

DOE PAGES

Sunku, Sai Swaroop; Kong, Tai; Ito, Toshimitsu; ...

2016-05-11

We study TmB 4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. In conclusion, we propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead to the AHE.

Intrinsic superspin Hall current

NASA Astrophysics Data System (ADS)

Linder, Jacob; Amundsen, Morten; Risinggârd, Vetle

2017-09-01

We discover an intrinsic superspin Hall current: an injected charge supercurrent in a Josephson junction containing heavy normal metals and a ferromagnet generates a transverse spin supercurrent. There is no accompanying dissipation of energy, in contrast to the conventional spin Hall effect. The physical origin of the effect is an antisymmetric spin density induced among transverse modes ky near the interface of the superconductor arising due to the coexistence of p -wave and conventional s -wave superconducting correlations with a belonging phase mismatch. Our predictions can be tested in hybrid structures including thin heavy metal layers combined with strong ferromagnets and ordinary s -wave superconductors.

A programmable quantum current standard from the Josephson and the quantum Hall effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poirier, W., E-mail: wilfrid.poirier@lne.fr; Lafont, F.; Djordjevic, S.

We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable quantum current source, a quantum ampere-meter, and a simplified closure of the quantum metrological triangle. Moreover, very accurate universality tests of the QHE could be performed by comparing PQCS based on different QHRs.

Resistive and Hall weighting functions in three dimensions

NASA Astrophysics Data System (ADS)

Koon, D. W.; Knickerbocker, C. J.

1998-10-01

The authors extend their study of the effect of macroscopic impurities on resistive and Hall measurements to include objects of finite thickness. The effect of such impurities is calculated for a series of rectangular parallelepipeds with two current and two voltage contacts on the corners of one square face. The weighting functions display singularities near these contacts, but these are shown to vanish in the two-dimensional limit, in agreement with previous results. Finally, it is shown that while Hall measurements principally sample the plane of the electrodes, resistivity measurements sample more of the interior of an object of finite thickness.

European Scientific Notes. Volume 38, Number 2.

DTIC Science & Technology

1984-02-01

Two-Dimensional Systems .................. J.T. Schriempf 80 The conference focused on the quantum Hall effect and the anomalous quantum Hall effect ...Study of the Effects of tional methods occur when the aim of Teaching Algorithmic and Heuristic instruction is to develop problem-solv- Solution Methods...Sharp and Dohme already has are therefore generally unsuitable as a fairly effective vaccine prepared from vaccines. The approach used by the the

A free-trailing vane flow direction indicator employing a linear output Hall effect transducer

NASA Technical Reports Server (NTRS)

Zell, Peter T.; Mcmahon, Robert D.

1988-01-01

The Hall effect vane (HEV) was developed to measure flow angularity in the NASA 40-by-80-foot and 80-by-120-foot wind tunnels. This indicator is capable of sensing flow direction at air speeds from 5 to 300 knots and over a + or - 40 deg angle range with a resolution of 0.1 deg. A free-trailing vane configuration employing a linear output Hall effect transducer as a shaft angle resolver was used. The current configuration of the HEV is designed primarily for wind tunnel calibration testing; however, other potential applications include atmospheric, flight or ground research testing. The HEV met initial design requirements.

Magnetic pressure effects in a plasma-liner interface

NASA Astrophysics Data System (ADS)

García-Rubio, F.; Sanz, J.

2018-04-01

A theoretical analysis of magnetic pressure effects in a magnetized liner inertial fusion-like plasma is presented. In previous publications [F. García-Rubio and J. Sanz, Phys. Plasmas 24, 072710 (2017)], the evolution of a hot magnetized plasma in contact with a cold unmagnetized plasma, aiming to represent the hot spot and liner, respectively, was investigated in planar geometry. The analysis was made in a double limit low Mach and high thermal to magnetic pressure ratio β. In this paper, the analysis is extended to an arbitrary pressure ratio. Nernst, Ettingshausen, and Joule effects come into play in the energy balance. The region close to the liner is governed by thermal conduction, while the Joule dissipation becomes predominant far from it when the pressure ratio is low. Mass ablation, thermal energy, and magnetic flux losses are reduced with plasma magnetization, characterized by the electron Hall parameter ω e τ e , until β values of order unity are reached. From this point forward, increasing the electron Hall parameter no longer improves the magnetic flux conservation, and mass ablation is enhanced due to the magnetic pressure gradients. A thoughtful simplification of the problem that allows to reduce the order of the system of governing equations while still retaining the finite β effects is presented and compared to the exact case.

Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes.

PubMed

Lee, Sangyeop; Bac, Seul-Ki; Choi, Seonghoon; Lee, Hakjoon; Yoo, Taehee; Lee, Sanghoon; Liu, Xinyu; Dobrowolska, M; Furdyna, Jacek K

2017-04-25

We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

The influence of nitrogen implantation on the electrical properties of amorphous IGZO

NASA Astrophysics Data System (ADS)

Zhan, S. L.; Zhao, M.; Zhuang, D. M.; Fu, E. G.; Cao, M. J.; Guo, L.; Ouyang, L. Q.

2017-09-01

In this study, nitrogen (N) implantation was adopted to regulate the carrier concentration and the Hall mobility of amorphous Indium Gallium Zinc Oxide (a-IGZO) films. The Hall Effect measurement demonstrates that the increase of implantation fluence can decrease the carrier concentration of a-IGZO by three orders to 1016 cm-3, which attributes to the reduction of oxygen defects. The addition of nitrogen atoms can result in the increase of Hall mobility to 9.93 cm2/V s with the subsequent decrease to 6.49 cm2/V s, which reflects the reduction of the average potential barrier height (φ0) to be 22.0 meV with subsequent increase to 74.8 meV in the modified percolation model. The results indicate that nitrogen can serve as an effective p-type dopants and oxygen defect suppressors. N-implantation with an appropriate fluence can effectively improve the Hall mobility and reduce the carrier concentration simultaneously.

Hall Thruster Plume Measurements On-Board the Russian Express Satellites

NASA Technical Reports Server (NTRS)

Manzella, David; Jankovsky, Robert; Elliott, Frederick; Mikellides, Ioannis; Jongeward, Gary; Allen, Doug

2001-01-01

The operation of North-South and East-West station-keeping Hall thruster propulsion systems on-board two Russian Express-A geosynchronous communication satellites were investigated through a collaborative effort with the manufacturer of the spacecraft. Over 435 firings of 16 different thrusters with a cumulative run time of over 550 hr were reported with no thruster failures. Momentum transfer due to plume impingement was evaluated based on reductions in the effective thrust of the SPT-100 thrusters and induced disturbance torques determined based on attitude control system data and range data. Hall thruster plasma plume effects on the transmission of C-band and Ku-band communication signals were shown to be negligible. On-orbit ion current density measurements were made and subsequently compared to predictions and ground test data. Ion energy, total pressure, and electric field strength measurements were also measured on-orbit. The effect of Hall thruster operation on solar array performance over several months was investigated. A subset of these data is presented.

Force balance on two-dimensional superconductors with a single moving vortex

NASA Astrophysics Data System (ADS)

Chung, Chun Kit; Arahata, Emiko; Kato, Yusuke

2014-03-01

We study forces on two-dimensional superconductors with a single moving vortex based on a recent fully self-consistent calculation of DC conductivity in an s-wave superconductor (E. Arahata and Y. Kato, arXiv:1310.0566). By considering momentum balance of the whole liquid, we attempt to identify various contributions to the total transverse force on the vortex. This provides an estimation of the effective Magnus force based on the quasiclassical theory generalized by Kita [T. Kita, Phys. Rev. B, 64, 054503 (2001)], which allows for the Hall effect in vortex states.