Constant voltage electro-slag remelting control

DOEpatents

Schlienger, M.E.

1996-10-22

A system for controlling electrode gap in an electro-slag remelt furnace has a constant regulated voltage and an electrode which is fed into the slag pool at a constant rate. The impedance of the circuit through the slag pool is directly proportional to the gap distance. Because of the constant voltage, the system current changes are inversely proportional to changes in gap. This negative feedback causes the gap to remain stable. 1 fig.

An isolated bridgeless AC-DC PFC converter using a LC resonant voltage doubler rectifier

NASA Astrophysics Data System (ADS)

Lee, Sin-woo; Do, Hyun-Lark

2016-12-01

This paper proposed an isolated bridgeless AC-DC power factor correction (PFC) converter using a LC resonant voltage doubler rectifier. The proposed converter is based on isolated conventional single-ended primary inductance converter (SEPIC) PFC converter. The conduction loss of rectification is reduced than a conventional one because the proposed converter is designed to eliminate a full-bridge rectifier at an input stage. Moreover, for zero-current switching (ZCS) operation and low voltage stresses of output diodes, the secondary of the proposed converter is designed as voltage doubler with a LC resonant tank. Additionally, an input-output electrical isolation is provided for safety standard. In conclusion, high power factor is achieved and efficiency is improved. The operational principles, steady-state analysis and design equations of the proposed converter are described in detail. Experimental results from a 60 W prototype at a constant switching frequency 100 kHz are presented to verify the performance of the proposed converter.

Design and experimental verification of an improved magnetostrictive energy harvester

NASA Astrophysics Data System (ADS)

Germer, M.; Marschner, U.; Flatau, A. B.

2017-04-01

This paper summarizes and extends the modeling state of the art of magnetostrictive energy harvesters with a focus on the pick-up coil design. The harvester is a one-sided clamped galfenol unimorph loaded with two brass pieces each containing a permanent magnet to create a biased magnetic field. Measurements on different pick-up coils were conducted and compared with results from an analytic model. Resistance, mass and inductance were formulated and proved by measurements. Both the length for a constant number of turns and the number of turns for a constant coil length were also modeled and varied. The results confirm that the output voltage depends on the coil length for a constant number of turns and is higher for smaller coils. In contrast to a uniform magnetic field, the maximal output voltage is gained if the coil is placed not directly at but near the fixation. Two effects explain this behavior: Due to the permanent magnet next to the fixation, the magnetic force is higher and orientates the magnetic domains stronger. The clamping locally increases the stress and forces the magnetic domains to orientate, too. For that reason the material is stiffer and therefore the strain smaller. The tradeoff between a higher induced voltage in the coil and an increasing inductance and resistance for every additional turn are presented together with an experimental validation of the models. Based on the results guidelines are given to design an optimal coil which maximizes the output power for a given unimorph.

Constant current loop impedance measuring system that is immune to the effects of parasitic impedances

NASA Technical Reports Server (NTRS)

Anderson, Karl F. (Inventor)

1994-01-01

A constant current loop measuring system is provided for measuring a characteristic of an environment. The system comprises a first impedance positionable in the environment, a second impedance coupled in series with said first impedance and a parasitic impedance electrically coupled to the first and second impedances. A current generating device, electrically coupled in series with the first and second impedances, provides a constant current through the first and second impedances to produce first and second voltages across the first and second impedances, respectively, and a parasitic voltage across the parasitic impedance. A high impedance voltage measuring device measures a voltage difference between the first and second voltages independent of the parasitic voltage to produce a characteristic voltage representative of the characteristic of the environment.

Ambient condition bias stress stability of vanadium (IV) oxide phthalocyanine based p-channel organic field-effect transistors

NASA Astrophysics Data System (ADS)

Obaidulla, Sk Md; Singh, Subhash; Mohapatra, Y. N.; Giri, P. K.

2018-01-01

High bias-stress stability and low threshold voltage (V th) shift under ambient conditions are highly desirable for practical applications of organic field-effect transistors (OFETs). We demonstrate here a 20-fold enhancement in the bias-stress stability for hexamethyledisilazane (HMDS) treated vanadium (IV) oxide phthalocyanine (VOPc) based OFETs as compared to the bare VOPc case under ambient conditions. VOPc based OFETs were fabricated on bare (non treated) SiO2 and a HMDS monolayer passivated SiO2 layer, with an operating voltage of 40 V. The devices with top contact gold (Au) electrodes exhibit excellent p-channel behavior with a moderate hole mobility for the HMDS-treated device. It is demonstrated that the time dependent ON-current decay and V th shift can be effectively controlled by using self-assembled monolayers of HMDS on the VOPc layer. For the HMDS-treated case, the bias stress stability study shows the stretched exponential decay of drain current by only ~15% during the long-term operation with constant bias voltage under ambient conditions, while it shows a large decay of  >70% for the nontreated devices operated for 1000 s. The corresponding characteric decay time constant (τ) is 104 s for the HMDS treated case, while that of the the non-treated SiO2 case is only ~480 s under ambient conditions. The inferior performance of the device with bare SiO2 is traced to the charge trapping at the voids in the inter-grain region of the films, while it is almost negligible for the HMDS-treated case, as confirmed from the AFM and XRD analyses. It is believed that HMDS treatment provides an excellent interface with a low density of traps and passivates the dangling bonds, which improve the charge transport characteristics. Also, the surface morphology of the VOPc film clearly influences the device performance. Thus, the HMDS treatment provides a very attractive approach for attaining long-term air stability and a low V th shift for the VOPc based OFET devices.

Hole trap formation in polymer light-emitting diodes under current stress

NASA Astrophysics Data System (ADS)

Niu, Quan; Rohloff, Roland; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.; Crǎciun, N. Irina

2018-06-01

Polymer light-emitting diodes (PLEDs) are attractive for use in large-area displays and lighting panels, but their limited stability under current stress impedes commercialization. In spite of large efforts over the last two decades a fundamental understanding of the degradation mechanisms has not been accomplished. Here we demonstrate that the voltage drift of a PLED driven at constant current is caused by the formation of hole traps, which leads to additional non-radiative recombination between free electrons and trapped holes. The observed trap formation rate is consistent with exciton-free hole interactions as the main mechanism behind PLED degradation, enabling us to unify the degradation behaviour of various poly(p-phenylene) derivatives. The knowledge that hole trap formation is the cause of PLED degradation means that we can suppress the negative effect of hole traps on voltage and efficiency by blending the light-emitting polymer with a large-bandgap semiconductor. Owing to trap-dilution these blended PLEDs show unprecedented stability.

Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress

NASA Astrophysics Data System (ADS)

He, Ming; Ou, Ya; Wang, Pei-I.; Lu, Toh-Ming

2010-05-01

It is known that Ta, a popular diffusion barrier material, can itself penetrate into low-k dielectrics under bias-temperature stress. In this work, we derived a model which directly correlates the diffusivity of Ta ions to the rate of flatband voltage shift (FBS) of the Ta/methyl silsesquixane (MSQ)/Si capacitors. From our experimentally measured constant FBS rate, the Ta diffusivity and activation energy were determined. It appears that an increase in the porosity of MSQ film enhances the Ta diffusivity but does not affect the associated activation energy. This suggests the Ta ion diffusion is mainly through interconnected pore surfaces.

System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

NASA Technical Reports Server (NTRS)

Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

1993-01-01

A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

Effects of cyclic impacts on the performance of a piezo-composite electricity generating element in a d33 mode energy harvesting.

PubMed

Pham, Van Lai; Ha, Ngoc San; Goo, Nam Seo; Choo, Jinkyo F

2014-10-01

The increasing use of piezoelectric generators to harvest energy from various ambient sources requires the establishment of durability data for piezoelectric materials. In this paper, a d3 mode piezocomposite electricity generating element (PCGE) was tested for its durability under cyclic impact loading. For this purpose, a motor driven lever system was designed to apply constant impact force on PCGEs. To investigate the durability of PCGEs, the output voltage of the PCGEs was observed upon repeated application of an impact force until eventual loss of the generated voltage. The experimental results enabled to determine the number of cycles until which PCGEs can be used without loss of their electricity generation performance with respect to the stress level applied on the PCGEs. At low stress level (around 0.76 MPa or lower), the PCGE showed almost insignificant degradation even after 2 million cycles whereas degradation occurred sooner (after 8 x 10(5) cycles) at higher stress levels (around 0.92 MPa or higher). The effects of impact loading on the durability of the PCGEs were also examined by X-ray photographs of the specimens.

Novel Circuits for Energizing Manganin Stress Gauges

NASA Astrophysics Data System (ADS)

Tasker, Douglas

2015-06-01

This paper describes the design, manufacture and testing of novel MOSFET pulsed constant current supplies for low impedance Manganin stress gauges. The design emphasis has been on high accuracy, low noise, simple, low cost, disposable supplies that can be used to energize multiple gauges in explosive or shock experiments. Manganin gauges used to measure stresses in detonating explosive experiments have typical resistances of 50 m Ω and are energized with pulsed currents of 50 A. Conventional pulsed current supplies for these gauges are high voltage devices with outputs as high as 500 V. Common problems with the use of high voltage supplies at explosive firing sites are: erroneous signals caused by ground loops; overdrive of oscilloscopes on gauge failure; gauge signal crosstalk; cost; and errors due to finite and changing source impedances. To correct these issues a novel MOSFET circuit was designed and will be described. It is an 18-V circuit, powered by 9-V alkaline batteries, and features an optically isolated trigger, and single-point grounding. These circuits have been successfully tested at the Los Alamos National Laboratory and selected explosive tests will be described together with their results. LA-UR-15-20613.

Power-control switch

NASA Technical Reports Server (NTRS)

Kessler, L. L.

1976-01-01

Constant-current source creates drive current independent of input-voltage variations, 50% reduction in power loss in base drive circuitry, maintains essentially constant charge rate, and improves rise-time consistency over input voltage range.

ELECTRICAL CIRCUITS USING COLD-CATHODE TRIODE VALVES

DOEpatents

Goulding, F.S.

1957-11-26

An electrical circuit which may be utilized as a pulse generator or voltage stabilizer is presented. The circuit employs a cold-cathode triode valve arranged to oscillate between its on and off stages by the use of selected resistance-capacitance time constant components in the plate and trigger grid circuits. The magnitude of the d-c voltage applied to the trigger grid circuit effectively controls the repetition rate of the output pulses. In the voltage stabilizer arrangement the d-c control voltage is a portion of the supply voltage and the rectified output voltage is substantially constant.

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

NASA Astrophysics Data System (ADS)

Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan

2012-03-01

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm2/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator.

Voltage sensor and dielectric material

DOEpatents

Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

2006-10-17

A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

Detecting electroporation by assessing the time constants in the exponential response of human skin to voltage controlled impulse electrical stimulation.

PubMed

Bîrlea, Sinziana I; Corley, Gavin J; Bîrlea, Nicolae M; Breen, Paul P; Quondamatteo, Fabio; OLaighin, Gearóid

2009-01-01

We propose a new method for extracting the electrical properties of human skin based on the time constant analysis of its exponential response to impulse stimulation. As a result of this analysis an adjacent finding has arisen. We have found that stratum corneum electroporation can be detected using this analysis method. We have observed that a one time-constant model is appropriate for describing the electrical properties of human skin at low amplitude applied voltages (<30V), and a two time-constant model best describes skin electrical properties at higher amplitude applied voltages (>30V). Higher voltage amplitudes (>30V) have been proven to create pores in the skin's stratum corneum which offer a new, lower resistance, pathway for the passage of current through the skin. Our data shows that when pores are formed in the stratum corneum they can be detected, in-vivo, due to the fact that a second time constant describes current flow through them.

Electrophoretic deposition (EPD): Mechanisms, kinetics, and application to ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarkar, P.; Nicholson, P.S.

1996-08-01

The mechanisms of electrophoretic deposition (EPD) are discussed and their shortcomings identified. The kinetics of the processes involved are analyzed for constant-current and constant-voltage conditions. A method of determining the Hamaker constant of suspended particles is developed by modeling the relationship between the particle interaction energy and the suspension stability. A three-probe dc technique is used to map the voltage profile around the depositing electrode, and the results are used to explain discrepancies between the calculated and experimentally observed voltage drops during deposition. A mechanism of deposition is proposed based on DLVO theory and particle double-layer distortion/thinning on application ofmore » a dc field to the suspension. Kinetic equations are developed for constant-current and constant-voltage EPD using mass balance conditions; these are verified by experiments. After the phenomenon is introduced and discussed, a critique of the application of EPD to the synthesis of ceramic shapes and coatings is given.« less

Carbon nanotube vacuum gauges with wide-dynamic range and processes thereof

NASA Technical Reports Server (NTRS)

Manohara, Harish (Inventor); Kaul, Anupama B. (Inventor)

2013-01-01

A miniature thermal conductivity gauge employs a carbon single-walled-nanotube. The gauge operates on the principle of thermal exchange between the voltage-biased nanotube and the surrounding gas at low levels of power and low temperatures to measure vacuum across a wide dynamic range. The gauge includes two terminals, a source of constant voltage to the terminals, a single-walled carbon nanotube between the terminals, a calibration of measured conductance of the nanotube to magnitudes of surrounding vacuum and a current meter in electrical communication with the source of constant voltage. Employment of the nanotube for measuring vacuum includes calibrating the electrical conductance of the nanotube to magnitudes of vacuum, exposing the nanotube to a vacuum, applying a constant voltage across the nanotube, measuring the electrical conductance of the nanotube in the vacuum with the constant voltage applied and converting the measured electrical conductance to the corresponding calibrated magnitude of vacuum using the calibration. The nanotube may be suspended to minimize heat dissipation through the substrate, increasing sensitivity at even tower pressures.

Constant-Current Source For Measuring Low Resistances

NASA Technical Reports Server (NTRS)

Toomath, Robert L.

1996-01-01

Constant-current source constructed for measuring electrical resistances up to few ohms in power-supply equipment. By setting current at 1 A and measuring resulting voltage drop across item under test, one obtains voltage reading numerically equal to resistance in ohms.

Physical processes in high field insulating liquid conduction

NASA Astrophysics Data System (ADS)

Mazarakis, Michael; Kiefer, Mark; Leckbee, Joshua; Anderson, Delmar; Wilkins, Frank; Obregon, Robert

2017-10-01

In the power grid transmission where a large amount of energy is transmitted to long distances, High Voltage DC (HVDC) transmission of up to 1MV becomes more attractive since is more efficient than the counterpart AC. However, two of the most difficult problems to solve are the cable connections to the high voltage power sources and their insulation from the ground. The insulating systems are usually composed of transformer oil and solid insulators. The oil behavior under HVDC is similar to that of a weak electrolyte. Its behavior under HVDC is dominated more by conductivity than dielectric constant. Space charge effects in the oil bulk near high voltage electrodes and impeded plastic insulators affect the voltage oil hold-off. We have constructed an experimental facility where we study the oil and plastic insulator behavior in an actual HVDC System. Experimental results will be presented and compared with the present understanding of the physics governing the oil behavior under very high electrical stresses. Sandia National Laboratories managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. D.O.E., NNSA under contract DE-NA-0003525.

Towards highly stable polymer electronics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nikolka, Mark; Nasrallah, Iyad; Broch, Katharina; Sadhanala, Aditya; Hurhangee, Michael; McCulloch, Iain; Sirringhaus, Henning

2016-11-01

Due to their ease of processing, organic semiconductors are promising candidates for applications in high performance flexible displays and fast organic electronic circuitry. Recently, a lot of advances have been made on organic semiconductors exhibiting surprisingly high performance and carrier mobilities exceeding those of amorphous silicon. However, there remain significant concerns about their operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode (OLED) displays. Here, we report a novel technique for dramatically improving the operational stress stability, performance and uniformity of high mobility polymer field-effect transistors by the addition of specific small molecule additives to the polymer semiconductor film. We demonstrate for the first time polymer FETs that exhibit stable threshold voltages with threshold voltage shifts of less than 1V when subjected to a constant current operational stress for 1 day under conditions that are representative for applications in OLED active matrix displays. The approach constitutes in our view a technological breakthrough; it also makes the device characteristics independent of the atmosphere in which it is operated, causes a significant reduction in contact resistance and significantly improves device uniformity. We will discuss in detail the microscopic mechanism by which the molecular additives lead to this significant improvement in device performance and stability.

Determining resistivity of a formation adjacent to a borehole having casing by generating constant current flow in portion of casing and using at least two voltage measurement electrodes

DOEpatents

Vail, III, William Banning

2000-01-01

Methods of operation of different types of multiple electrode apparatus vertically disposed in a cased well to measure information related to the resistivity of adjacent geological formations from within the cased well are described. The multiple electrode apparatus has a minimum of two spaced apart voltage measurement electrodes that electrically engage a first portion of the interior of the cased well and that provide at least first voltage information. Current control means are used to control the magnitude of any selected current that flows along a second portion of the interior of the casing to be equal to a predetermined selected constant. The first portion of the interior of the cased well is spaced apart from the second portion of the interior of the cased well. The first voltage information and the predetermined selected constant value of any selected current flowing along the casing are used in part to determine a magnitude related to the formation resistivity adjacent to the first portion of the interior of the cased well. Methods and apparatus having a plurality of voltage measurement electrodes are disclosed that provide voltage related information in the presence of constant currents flowing along the casing which is used to provide formation resistivity.

Design of Edible Oil Degradation Tool by Using Electromagnetic Field Absorbtion Principle which was Characterized to Peroxide Number

NASA Astrophysics Data System (ADS)

Isnen, M.; Nasution, T. I.; Perangin-angin, B.

2016-08-01

The identification of changes in oil quality has been conducted by indicating the change of dielectric constant which was showed by sensor voltage. Sensor was formed from two parallel flats that worked by electromagnetic wave propagation principle. By measuring its amplitude of electromagnetic wave attenuation caused by interaction between edible oil samples and the sensor, dielectric constant could be identified and estimated as well as peroxide number. In this case, the parallel flats were connected to an electric oscillator 700 kHz. Furthermore, sensor system could showed measurable voltage differences for each different samples. The testing carried out to five oil samples after undergoing an oxidation treatment at fix temperature of 235oC for 0, 5, 10, 15 and 20 minutes. Iodometry method testing showed peroxide values about 1.99, 9.95, 5.96, 11.86, and 15.92 meq/kg respectively with rising trend. Besides that, the testing result by sensor system showed voltages values 1.139, 1.147, 1.165, 1.173, and 1.176 volts with rising trend, respectively. It means that the higher sensor voltages showed the higher damage rate of edible oil when the change in sensor voltage was caused by the change in oil dielectric constant in which heating process caused damage in edible oil molecules structure. The more damage of oil structure caused the more difficulties of oil molecules to polarize and it is indicated by smaller dielectric constant. Therefore electric current would be smaller when sensor voltage was higher. On the other side, the higher sensor voltage means the smaller dielectric constant and the higher peroxide number.

Study of imbalanced internal resistance on drop voltage of LiFePO4 battery system connected in parallel

NASA Astrophysics Data System (ADS)

Adie Perdana, Fengky; Supriyanto, Agus; Purwanto, Agus; Jamaluddin, Anif

2017-01-01

The purpose of this research focuses on the effect of imbalanced internal resistance for the drop voltage of LiFePO4 18650 battery system connected in parallel. The battery pack has been assembled consist of two cell battery LiFePO4 18650 that has difference combination of internal resistance. Battery pack was tested with 1/C constant current charging, 3,65V per group sel, 3,65V constant voltage charging, 5 minutes of rest time between charge and discharge process, 1/2C Constant current discharge until 2,2V, 26 cycle of measurement test, and 4320 minutes rest time after the last charge cycle. We can conclude that the difference combination of internal resistance on the battery pack seriously influence the drop voltage of a battery. Theoretical and experimental result show that the imbalance of internal resistance during cycling are mainly responsible for the drop voltage of LiFePO4 parallel batteries. It is thus a good way to avoid drop voltage fade of parallel battery system by suppressing variations of internal resistance.

Logarithmic circuit with wide dynamic range

NASA Technical Reports Server (NTRS)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

NASA Astrophysics Data System (ADS)

Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

Electroosmotically enhanced drying of biomass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, S.; Law, S.E.

A laboratory system for experimentally characterizing electroosmotic dewatering of biomass has been developed. The system was used to investigate the dewatering at both constant voltage and constant current of two biomass materials, organic humus with peat and composted wastewater sludge (WWS). The moisture content of humus decreased to 22.5% from an initial value of 44.3% wet basis (wb) after 2 h 10 min of electroosmosis at 50 V across a 2.9-cm-thick bed, whereas that of sludge decreased to 54.5% from an initial value of 68.4% after 2 h 20 min at 40 V across the bed. The electrical energy requiredmore » to remove 1 kg of water by constant-voltage electroosmosis of humus varied from 23% to 61%, in the voltage range of 10--50 V, of the thermal energy required to change the same quantity of free water from liquid to vapor state. For WWS, the energy remained constant at a higher value of 88% over the 20--40-V range studied. The flowrate of liquid water out of the bed at constant voltage linearly increased with the applied electric field, and the electrical energy expended in the constant-current dewatering mode was seen to be a quadratic function of time as predicted by classical electrokinetic theory.« less

Voltage transfer function as an optical method to characterize electrical properties of liquid crystal devices.

PubMed

Bateman, J; Proctor, M; Buchnev, O; Podoliak, N; D'Alessandro, G; Kaczmarek, M

2014-07-01

The voltage transfer function is a rapid and visually effective method to determine the electrical response of liquid crystal (LC) systems using optical measurements. This method relies on crosspolarized intensity measurements as a function of the frequency and amplitude of the voltage applied to the device. Coupled with a mathematical model of the device it can be used to determine the device time constants and electrical properties. We validate the method using photorefractive LC cells and determine the main time constants and the voltage dropped across the layers using a simple nonlinear filter model.

Investigation of the frequency response of constant voltage anemometers in turbulent flows

NASA Astrophysics Data System (ADS)

Sadeghi Hassanlouei, Atabak

A commercially available anemometer system considered as a prototype, the constant voltage anemometer (CVA), is presented and its working principle is studied and analyzed. We detail the different procedures and corrections that have to be applied to voltage signals to deduce corresponding velocity signals, including the effect of the thermal inertia of the sensor. Results are compared to another anemometer system widely used in research and industry, the constant temperature anemometer (CTA), for validation requirements. Measurements are performed in the turbulent region of a subsonic axisymmetric jet and include mean velocities, root-mean-square (rms) values of velocity fluctuations and power spectral densities. In the same range of operation, we show that the two instruments give similar results. The CVA anemometer slightly underestimates the rms velocity values given by the CTA anemometer which is attributed to a non-linear effect. We show that the cut-off frequency of the CVA system is higher than the more commonly used CTA system, and that the electronic noise level is lower. The constant voltage anemometer is thus an excellent alternative to the constant temperature anemometer for low turbulent flows with rich frequency content, such as supersonic and hypersonic flows.

Paramagnetic defects and charge trapping behavior of ZrO2 films deposited on germanium by plasma-enhanced CVD

NASA Astrophysics Data System (ADS)

Mahata, C.; Bera, M. K.; Bose, P. K.; Maiti, C. K.

2009-02-01

Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping behavior and chemical nature of defects in ultrathin (~14 nm) high-k ZrO2 dielectric films deposited on p-Ge (1 0 0) substrates at low temperature (<200 °C) by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma at a pressure of ~65 Pa. Both the band and defect-related electron states have been characterized using electron paramagnetic resonance, internal photoemission, capacitance-voltage and current-voltage measurements under UV illumination. Capacitance-voltage and photocurrent-voltage measurements were used to determine the centroid of oxide charge within the high-k gate stack. The observed shifts in photocurrent response of the Al/ZrO2/GeO2/p-Ge metal-insulator-semiconductor (MIS) capacitors indicate the location of the centroids to be within the ZrO2 dielectric near to the gate electrode. Moreover, the measured flat band voltage and photocurrent shifts also indicate a large density of traps in the dielectric. The impact of plasma nitridation on the interfacial quality of the oxides has been investigated. Different N sources, such as NO and NH3, have been used for nitrogen engineering. Oxynitride samples show a lower defect density and trapping over the non-nitrided samples. The charge trapping and detrapping properties of MIS capacitors under stressing in constant current and voltage modes have been investigated in detail.

Evaluation of Commercial Automotive-Grade BME Capacitors

NASA Technical Reports Server (NTRS)

Liu, Donhang

2014-01-01

Three Ni-BaTiO3 ceramic capacitor lots with the same specification (chip size, capacitance, and rated voltage) and the same reliability level, made by three different manufacturers, were degraded using highly accelerated life stress testing (HALST) with the same temperature and applied voltage conditions. The reliability, as characterized by mean time to failure (MTTF), differed by more than one order of magnitude among the capacitor lots. A theoretical model based on the existence of depletion layers at grain boundaries and the entrapment of oxygen vacancies has been proposed to explain the MTTF difference among these BME capacitors. It is the conclusion of this model that reliability will not be improved simply by increasing the insulation resistance of a BME capacitor. Indeed, Ni-BaTiO3 ceramic capacitors with a smaller degradation rate constant K will always give rise to a longer reliability life.

Evaluation of Commercial Automotive-Grade BME Capacitors

NASA Technical Reports Server (NTRS)

Liu, Donhang

2014-01-01

Three Ni-BaTiO3 ceramic capacitor lots with the same specification (chip size, capacitance, and rated voltage) and the same reliability level, made by three different manufacturers, were degraded using highly accelerated life stress testing (HALST) with the same temperature and applied voltage conditions. The reliability, as characterized by mean time to failure (MTTF), differed by more than one order of magnitude among the capacitor lots. A theoretical model based on the existence of depletion layers at grain boundaries and the entrapment of oxygen vacancies has been proposed to explain the MTTF difference among these BME capacitors. It is the conclusion of this model that reliability will not be improved simply by increasing the insulation resistance of a BME capacitor. Indeed, Ni-BaTiO3 ceramic capacitors with a smaller degradation rate constant K will always give rise to a longer reliability life

1.6 V nanogenerator for mechanical energy harvesting using PZT nanofibers.

PubMed

Chen, Xi; Xu, Shiyou; Yao, Nan; Shi, Yong

2010-06-09

Energy harvesting technologies that are engineered to miniature sizes, while still increasing the power delivered to wireless electronics, (1, 2) portable devices, stretchable electronics, (3) and implantable biosensors, (4, 5) are strongly desired. Piezoelectric nanowire- and nanofiber-based generators have potential uses for powering such devices through a conversion of mechanical energy into electrical energy. (6) However, the piezoelectric voltage constant of the semiconductor piezoelectric nanowires in the recently reported piezoelectric nanogenerators (7-12) is lower than that of lead zirconate titanate (PZT) nanomaterials. Here we report a piezoelectric nanogenerator based on PZT nanofibers. The PZT nanofibers, with a diameter and length of approximately 60 nm and 500 microm, were aligned on interdigitated electrodes of platinum fine wires and packaged using a soft polymer on a silicon substrate. The measured output voltage and power under periodic stress application to the soft polymer was 1.63 V and 0.03 microW, respectively.

Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates and Method Relating Thereto

NASA Technical Reports Server (NTRS)

Simpson, Joycelyn O. (Inventor); St.Claire, Terry L. (Inventor)

2002-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared, This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers, acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors. in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches. adjustable fresnel lenses, speakers, tactile sensors, weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 100 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrates; heating the metal electrode coated polymeric substrate in a low dielectric medium; applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates

NASA Technical Reports Server (NTRS)

Simpson, Joycely O. (Inventor); St.Clair, Terry L. (Inventor)

1999-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers. acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors, in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches, adjustable fresnel lenses, speakers, tactile sensors. weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 1000 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrate; heating the metal electrode coated polymeric substrate in a low dielectric medium; applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Method of Making Thermally Stable, Piezoelectric and Proelectric Polymeric Substrates

NASA Technical Reports Server (NTRS)

Simpson, Joycelyn O. (Inventor); St.Clair, Terry L. (Inventor)

1999-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers, acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors. in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches, adjustable fresnel lenses, speakers, tactile sensors, weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 100 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrate; heating the metal electrode coated polymeric substrate in a low dielectric medium: applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Optimal Charging Profiles with Minimal Intercalation-Induced Stresses for Lithium-Ion Batteries Using Reformulated Pseudo 2-Dimensional Models

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suthar, B; Northrop, PWC; Braatz, RD

This paper illustrates the application of dynamic optimization in obtaining the optimal current profile for charging a lithium-ion battery by restricting the intercalation-induced stresses to a pre-determined limit estimated using a pseudo 2-dimensional (P2D). model. This paper focuses on the problem of maximizing the charge stored in a given time while restricting capacity fade due to intercalation-induced stresses. Conventional charging profiles for lithium-ion batteries (e.g., constant current followed by constant voltage or CC-CV) are not derived by considering capacity fade mechanisms, which are not only inefficient in terms of life-time usage of the batteries but are also slower by notmore » taking into account the changing dynamics of the system. (C) The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. All rights reserved.« less

Voltage-step pulsed electromembrane as a novel view of electrical field-induced liquid-phase microextraction.

PubMed

Rezazadeh, Maryam; Yamini, Yadollah; Seidi, Shahram; Arjomandi-Behzad, Leila

2014-01-10

In the present work, the effect of application of voltage steps on extraction efficiency of pulsed electromembrane extraction (PEME) was investigated for the first time. The effects of voltage variations including initial and final voltages, number of steps between the initial and final voltages as well as their time durations were studied on the extraction efficiencies of three different classes of analytes. These classes include amitriptyline (AMI) and nortriptyline (NOR) as more hydrophobic analytes, diclofenac (DIC) and mefenamic acid (MEF) as acidic drugs and salbutamol (SB) and terbutaline (TB) as hydrophilic compounds. It was anticipated that the application of high voltages is not necessary at the beginning of the extraction, since large amounts of target analytes exist around the supported liquid membrane (SLM)/sample solution interface. So, they could be easily transferred into the acceptor phase utilizing lower voltages. Results showed that the benefits of voltage-step PEME (VS-PEME) are more obvious in systems with low electrical resistance (regarding the SLM composition). Efficiencies of VS-PEME for extraction of AMI and NOR (96% and 89% for AMI and NOR, respectively) were comparable with those achieved from applying a constant voltage (95% for AMI and 83% for NOR). However, recoveries from the VS-PEME of DIC and MEF (53% and 44% for DIC and MEF, respectively) were significantly higher than those from the application of a constant voltage (33% for DIC and 31% for MEF). Also, recoveries obtained from the VS-PEME for SB and TB were approximately 3 orders of magnitude greater than those from a constant voltage. Moreover, it was demonstrated that in all cases analytes could effectively be extracted at the beginning of extraction by applying low voltages. Copyright © 2013 Elsevier B.V. All rights reserved.

Reevaluation of Performance of Electric Double-layer Capacitors from Constant-current Charge/Discharge and Cyclic Voltammetry

PubMed Central

Allagui, Anis; Freeborn, Todd J.; Elwakil, Ahmed S.; Maundy, Brent J.

2016-01-01

The electric characteristics of electric-double layer capacitors (EDLCs) are determined by their capacitance which is usually measured in the time domain from constant-current charging/discharging and cyclic voltammetry tests, and from the frequency domain using nonlinear least-squares fitting of spectral impedance. The time-voltage and current-voltage profiles from the first two techniques are commonly treated by assuming ideal SsC behavior in spite of the nonlinear response of the device, which in turn provides inaccurate values for its characteristic metrics. In this paper we revisit the calculation of capacitance, power and energy of EDLCs from the time domain constant-current step response and linear voltage waveform, under the assumption that the device behaves as an equivalent fractional-order circuit consisting of a resistance Rs in series with a constant phase element (CPE(Q, α), with Q being a pseudocapacitance and α a dispersion coefficient). In particular, we show with the derived (Rs, Q, α)-based expressions, that the corresponding nonlinear effects in voltage-time and current-voltage can be encompassed through nonlinear terms function of the coefficient α, which is not possible with the classical RsC model. We validate our formulae with the experimental measurements of different EDLCs. PMID:27934904

Reevaluation of Performance of Electric Double-layer Capacitors from Constant-current Charge/Discharge and Cyclic Voltammetry

NASA Astrophysics Data System (ADS)

Allagui, Anis; Freeborn, Todd J.; Elwakil, Ahmed S.; Maundy, Brent J.

2016-12-01

The electric characteristics of electric-double layer capacitors (EDLCs) are determined by their capacitance which is usually measured in the time domain from constant-current charging/discharging and cyclic voltammetry tests, and from the frequency domain using nonlinear least-squares fitting of spectral impedance. The time-voltage and current-voltage profiles from the first two techniques are commonly treated by assuming ideal SsC behavior in spite of the nonlinear response of the device, which in turn provides inaccurate values for its characteristic metrics. In this paper we revisit the calculation of capacitance, power and energy of EDLCs from the time domain constant-current step response and linear voltage waveform, under the assumption that the device behaves as an equivalent fractional-order circuit consisting of a resistance Rs in series with a constant phase element (CPE(Q, α), with Q being a pseudocapacitance and α a dispersion coefficient). In particular, we show with the derived (Rs, Q, α)-based expressions, that the corresponding nonlinear effects in voltage-time and current-voltage can be encompassed through nonlinear terms function of the coefficient α, which is not possible with the classical RsC model. We validate our formulae with the experimental measurements of different EDLCs.

Reevaluation of Performance of Electric Double-layer Capacitors from Constant-current Charge/Discharge and Cyclic Voltammetry.

PubMed

Allagui, Anis; Freeborn, Todd J; Elwakil, Ahmed S; Maundy, Brent J

2016-12-09

The electric characteristics of electric-double layer capacitors (EDLCs) are determined by their capacitance which is usually measured in the time domain from constant-current charging/discharging and cyclic voltammetry tests, and from the frequency domain using nonlinear least-squares fitting of spectral impedance. The time-voltage and current-voltage profiles from the first two techniques are commonly treated by assuming ideal R s C behavior in spite of the nonlinear response of the device, which in turn provides inaccurate values for its characteristic metrics [corrected]. In this paper we revisit the calculation of capacitance, power and energy of EDLCs from the time domain constant-current step response and linear voltage waveform, under the assumption that the device behaves as an equivalent fractional-order circuit consisting of a resistance R s in series with a constant phase element (CPE(Q, α), with Q being a pseudocapacitance and α a dispersion coefficient). In particular, we show with the derived (R s , Q, α)-based expressions, that the corresponding nonlinear effects in voltage-time and current-voltage can be encompassed through nonlinear terms function of the coefficient α, which is not possible with the classical R s C model. We validate our formulae with the experimental measurements of different EDLCs.

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

NASA Astrophysics Data System (ADS)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Constant voltage and constant current control implementation for electric vehicles (evs) wireless charger

NASA Astrophysics Data System (ADS)

Tampubolon, Marojahan; Pamungkas, Laskar; Hsieh, Yao Ching; Chiu, Huang Jen

2018-04-01

This paper presents the implementation of Constant Voltage (CV) and Constant Current (CC) control for a wireless charger system. A battery charging system needs these control modes to ensure the safety of the battery and the effectiveness of the charging system. Here, the wireless charger system does not employ any post-regulator stage to control the output voltage and output current of the charger. But, it uses a variable frequency control incorporated with a conventional PI control. As a result, the size and the weight of the system are reduced. This paper discusses the brief review of the SS-WPT, control strategy and implementation of the CV and CC control. Experimental hardware with 2kW output power has been performed and tested. The results show that the proposed CV and CC control method works well with the system.

Why Batteries Deliver a Fairly Constant Voltage until Dead

ERIC Educational Resources Information Center

Smith, Garon C.; Hossain, Md. Mainul; MacCarthy, Patrick

2012-01-01

Two characteristics of batteries, their delivery of nearly constant voltage and their rapid failure, are explained through a visual examination of the Nernst equation. Two Galvanic cells are described in detail: (1) a wet cell involving iron and copper salts and (2) a mercury oxide dry cell. A complete description of the wet cell requires a…

The Most Energy Efficient Way to Charge the Capacitor in an RC Circuit

ERIC Educational Resources Information Center

Wang, Dake

2017-01-01

The voltage waveform that minimizes the energy loss in the resistance when charging the capacitor in a resistor-capacitor circuit is investigated using the calculus of variation. A linear voltage ramp gives the best efficiency, which means a constant current source should be used for charging. Comparison between constant current source and…

Time and voltage dependences of nanoscale dielectric constant modulation on indium tin oxide films

NASA Astrophysics Data System (ADS)

Li, Liang; Hao, Haoyue; Zhao, Hua

2017-01-01

The modulation of indium tin oxide (ITO) films through surface charge accumulation plays an important role in many different applications. In order to elaborately study the modulation, we measured the dielectric constant of the modulated layer through examining the excitation of surface plasmon polaritons. Charges were pumped on the surfaces of ITO films through applying high voltage in appropriate directions. Experiments unveiled that the dielectric constant of the modulated layer had large variation along with the nanoscale charge accumulation. Corresponding numerical results were worked out through combining Drude model and Mayadas-Shatzkes model. Based on the above results, we deduced the time and voltage dependences of accumulated charge density, which revealed a long-time charge accumulation process.

Interpretation of current-voltage relationships for "active" ion transport systems: I. Steady-state reaction-kinetic analysis of class-I mechanisms.

PubMed

Hansen, U P; Gradmann, D; Sanders, D; Slayman, C L

1981-01-01

This paper develops a simple reaction-kinetic model to describe electrogenic pumping and co- (or counter-) transport of ions. It uses the standard steady-state approach for cyclic enzyme- or carrier-mediated transport, but does not assume rate-limitation by any particular reaction step. Voltage-dependence is introduced, after the suggestion of Läuger and Stark (Biochim. Biophys. Acta 211:458-466, 1970), via a symmetric Eyring barrier, in which the charge-transit reaction constants are written as k12 = ko12 exp(zF delta psi/2RT) and k21 = ko21 exp(-zF delta psi/2RT). For interpretation of current-voltage relationships, all voltage-independent reaction steps are lumped together, so the model in its simplest form can be described as a pseudo-2-state model. It is characterized by the two voltage-dependent reaction constants, two lumped voltage-independent reaction constants (k12, k21), and two reserve factors (ri, ro) which formally take account of carrier states that are indistinguishable in the current-voltage (I-V) analysis. The model generates a wide range of I-V relationships, depending on the relative magnitudes of the four reaction constants, sufficient to describe essentially all I-V datas now available on "active" ion-transport systems. Algebraic and numerical analysis of the reserve factors, by means of expanded pseudo-3-, 4-, and 5-state models, shows them to be bounded and not large for most combinations of reaction constants in the lumped pathway. The most important exception to this rule occurs when carrier decharging immediately follows charge transit of the membrane and is very fast relative to other constituent voltage-independent reactions. Such a circumstance generates kinetic equivalence of chemical and electrical gradients, thus providing a consistent definition of ion-motive forces (e.g., proton-motive force, PMF). With appropriate restrictions, it also yields both linear and log-linear relationships between net transport velocity and either membrane potential or PMF. The model thus accommodates many known properties of proton-transport systems, particularly as observed in "chemiosmotic" or energy-coupling membranes.

Bipolar square-wave current source for transient electromagnetic systems based on constant shutdown time

NASA Astrophysics Data System (ADS)

Wang, Shilong; Yin, Changchun; Lin, Jun; Yang, Yu; Hu, Xueyan

2016-03-01

Cooperative work of multiple magnetic transmitting sources is a new trend in the development of transient electromagnetic system. The key is the bipolar current waves shutdown, concurrently in the inductive load. In the past, it was difficult to use the constant clamping voltage technique to realize the synchronized shutdown of currents with different peak values. Based on clamping voltage technique, we introduce a new controlling method with constant shutdown time. We use the rising time to control shutdown time and use low voltage power source to control peak current. From the viewpoint of the circuit energy loss, by taking the high-voltage capacitor bypass resistance and the capacitor of the passive snubber circuit into account, we establish the relationship between the rising time and the shutdown time. Since the switch is not ideal, we propose a new method to test the shutdown time by the low voltage, the high voltage and the peak current. Experimental results show that adjustment of the current rising time can precisely control the value of the clamp voltage. When the rising time is fixed, the shutdown time is unchanged. The error for shutdown time deduced from the energy consumption is less than 6%. The new controlling method on current shutdown proposed in this paper can be used in the cooperative work of borehole and ground transmitting system.

Bipolar square-wave current source for transient electromagnetic systems based on constant shutdown time.

PubMed

Wang, Shilong; Yin, Changchun; Lin, Jun; Yang, Yu; Hu, Xueyan

2016-03-01

Cooperative work of multiple magnetic transmitting sources is a new trend in the development of transient electromagnetic system. The key is the bipolar current waves shutdown, concurrently in the inductive load. In the past, it was difficult to use the constant clamping voltage technique to realize the synchronized shutdown of currents with different peak values. Based on clamping voltage technique, we introduce a new controlling method with constant shutdown time. We use the rising time to control shutdown time and use low voltage power source to control peak current. From the viewpoint of the circuit energy loss, by taking the high-voltage capacitor bypass resistance and the capacitor of the passive snubber circuit into account, we establish the relationship between the rising time and the shutdown time. Since the switch is not ideal, we propose a new method to test the shutdown time by the low voltage, the high voltage and the peak current. Experimental results show that adjustment of the current rising time can precisely control the value of the clamp voltage. When the rising time is fixed, the shutdown time is unchanged. The error for shutdown time deduced from the energy consumption is less than 6%. The new controlling method on current shutdown proposed in this paper can be used in the cooperative work of borehole and ground transmitting system.

Highly reliable spin-coated titanium dioxide dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in; Kumar, Arvind; Rao, K. S. R. Koteswara

Dielectric degradation as low as 0.3 % has been observed for a highly reliable Titanium dioxide (TiO{sub 2}) film after constant voltage stressing (CVS) with – 4 V for 10{sup 5} second at room temperature (300 K). The film was fabricated by sol –gel spin – coating method on a lightly doped p-Si (~10{sup 15} cm{sup −3}) substrate. The equivalent oxide thickness (EOT) is 7 nm with a dielectric constant 33 (at 1 MHz). Metal – Oxide – Semiconductor (MOS) capacitors have been fabricated with an optimum annealing temperature of 800°C for one hour in a preheated furnace. The dielectricmore » degradation is annealing temperature dependent. A degradation of 1.4 %, 1.2 % and 1.1 % has been observed for 400°C, 600°C and 1000°C temperature annealed MOS respectively. The dielectric degradation increases below or above the optimum temperature of annealing.« less

A comprehensive study to evaluate the effect of constant low voltage iontophoresis on transungual delivery.

PubMed

Nair, Anroop B; Singh, Kishan; Shinu, Pottathil; Harsha, Sree; Al-Dhubiab, Bandar E

2013-05-01

Treatment of nail diseases by topical drug delivery continues to draw much attention in the recent days. This study aims to systematically investigate the effect of constant voltage iontophoresis in the transungual drug delivery, using ciclopirox as a model drug. Preliminary permeation studies were carried out by applying constant voltage (6 V for 24 h) using a gel formulation across the human nail plate in a Franz diffusion cell. Different protocols have been studied to authenticate the potential of the proposed technique. Antifungal studies were carried out to assess the pharmacodynamic effect of drug depot formed in the nail plate. Initial studies revealed that application of constant voltage iontophoresis enhanced the permeation by an order of magnitude (p = 0.019) and delivered significant amount of drug into the deeper nail layers. Noticeably higher permeation was observed during the active phase in on-off studies. Excellent correlation was observed in permeation (r(2) = 0.98) and drug load (r(2) = 0.97) with the increase in applied voltage (3-12 V), indicating that the current technique is predictable. The data observed suggest that any further increase in voltage could eventually lead to increase in the permeation and drug load, as the saturation level is very distant. Furthermore, the enhancement in permeation with the applied voltage (3-12 V) was found to be 6-20 folds, compared to the passive process. Results of step up and step down studies substantiated the viability of the current technique. Zone of inhibition measured during the antifungal studies demonstrated that the drug molecules loaded into the nail plate by low voltage iontophoresis is active and releases over an extended period of time (~32 days). Given the excellent results, the current technique could be used as an effective approach for the delivery of antimycotics, which would localize the drug at the infection site and potentially offer higher patient compliance.

Mechanism and kinetics of electrophoretic deposition of Al{sub 2}O{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarkar, P.; Nicholson, P.S.

1996-06-01

The four main electrophoretic deposition (EPD) mechanisms are discussed and their shortcomings pointed out. The Hamaker constant for Al{sub 2}O{sub 3} in ethanol suspension is determined by modelling the relationship between particle interaction energy and suspension stability. The Derjagun-Landau-Verwey-Overbeek (DLVO) interaction energy curve for Al{sub 2}O{sub 3} particles in ethanol suspension is calculated and the minimum deposition voltage determined. Three probe dc measurements were conducted to explain discrepancies between the calculated and experimentally-observed voltage. A mechanism proposed is based on the DLVO theory and particle-lyosphere destortion/thinning. Kinetic equations for EPD are developed for constant current and constant voltage deposition usingmore » mass balance conditions and verified by experimental data.« less

Investigation of Structures of Microwave Microelectromechanical-System Switches by Taguchi Method

NASA Astrophysics Data System (ADS)

Lai, Yeong-Lin; Lin, Chien-Hung

2007-10-01

The optimal design of microwave microelectromechanical-system (MEMS) switches by the Taguchi method is presented. The structures of the switches are analyzed and optimized in terms of the effective stiffness constant, the maximum von Mises stress, and the natural frequency in order to improve the reliability and the performance of the MEMS switches. There are four factors, each of which has three levels in the Taguchi method for the MEMS switches. An L9(34) orthogonal array is used for the matrix experiments. The characteristics of the experiments are studied by the finite-element method and the analytical method. The responses of the signal-to-noise (S/N) ratios of the characteristics of the switches are investigated. The statistical analysis of variance (ANOVA) is used to interpret the experimental results and decide the significant factors. The final optimum setting, A1B3C1D2, predicts that the effective stiffness constant is 1.06 N/m, the maximum von Mises stress is 76.9 MPa, and the natural frequency is 29.331 kHz. The corresponding switching time is 34 μs, and the pull-down voltage is 9.8 V.

High voltage bushing having weathershed and surrounding stress relief collar

DOEpatents

Cookson, Alan H.

1981-01-01

A high voltage electric bushing comprises a hollow elongated dielectric weathershed which encloses a high voltage conductor. A collar formed of high voltage dielectric material is positioned over the weathershed and is bonded thereto by an interface material which precludes moisture-like contaminants from entering between the bonded portions. The collar is substantially thicker than the adjacent weathershed which it surrounds, providing relief of the electric stresses which would otherwise appear on the outer surface of the weathershed. The collar may include a conductive ring or capacitive foil to further relieve electric stresses experienced by the bushing.

Determination of threshold and maximum operating electric stresses for selected high voltage insulations. Task 2: Investigation of oil-filled paper insulated cables

NASA Astrophysics Data System (ADS)

Sosnowski, M.; Eager, G. S., Jr.

1983-06-01

Threshold voltage of oil-impregnated paper insulated cables are investigaed. Experimental work was done on model cables specially manufactured for this project. The cables were impregnated with mineral and with synthetic oils. Standard impulse breakdown voltage tests and impulse voltage breakdown tests with dc prestressing were performed at room temperature and at 1000C. The most important result is the finding of very high level of threshold voltage stress for oil-impregnated paper insulated cables. This threshold voltage is approximately 1.5 times higher than the threshold voltage or crosslinked polyethylene insulated cables.

Characteristics of arc currents on a negatively biased solar cell array in a plasma

NASA Technical Reports Server (NTRS)

Snyder, D. B.

1984-01-01

The time dependence of the emitted currents during arcing on solar cell arrays is being studied. The arcs are characterized using three parameters: the voltage change of the array during the arc (i.e., the charge lost), the peak current during the arc, and the time constant describing the arc current. This paper reports the dependence of these characteristics on two array parameters, the interconnect bias voltage and the array capacitance to ground. It was found that the voltage change of the array during an arc is nearly equal to the bias voltage. The array capacitance, on the other hand, influences both the peak current and the decay time constant of the arc. Both of these characteristics increase with increasing capacitance.

Voltage Stress on Y Capacitors from Indirect Lightning Pulses According to ED-14/DO-160

NASA Astrophysics Data System (ADS)

Meier, F.

2012-05-01

Transients due to lightning strikes on an aircraft's fuselage impose stress on the input filters of elec- tronic equipment. Permanent damage can occur when exceeding the voltage handling capacity of filter components causing a short circuit to ground. In ED-14/DO-160, section 22, a number of waveforms and levels are defined which are used to check the airworthiness of avionics equipment. Depending on pro- cedure and level, Y-capacitors are stressed by transient voltages which exceed their dielectric strength. The design engineer's task is a properly select the type and voltage rating of capacitors. With moderate simplifications, a LCR-series network is justified to calculate the peak voltage dependent on the capacitance.

State-plane trajectories used to observe and control the behavior of a voltage step-up dc-to-dc converter

NASA Technical Reports Server (NTRS)

Burns, W. W., III; Wilson, T. G.

1976-01-01

State-plane analysis techniques are employed to study the voltage step up energy storage dc-to-dc converter. Within this framework, an example converter operating under the influence of a constant on time and a constant frequency controller is examined. Qualitative insight gained through this approach is used to develop a conceptual free running control law for the voltage step up converter which can achieve steady state operation in one on/off cycle of control. Digital computer simulation data is presented to illustrate and verify the theoretical discussions presented.

Modeling and simulation performance of photovoltaic system integration battery and supercapacitor paralellization of MPPT prototipe for solar vehicle

NASA Astrophysics Data System (ADS)

Ajiatmo, Dwi; Robandi, Imam

2017-03-01

This paper proposes a control scheme photovoltaic, battery and super capacitor connected in parallel for use in a solar vehicle. Based on the features of battery charging, the control scheme consists of three modes, namely, mode dynamic irradian, constant load mode and constant voltage charging mode. The shift of the three modes can be realized by controlling the duty cycle of the mosffet Boost converter system. Meanwhile, the high voltage which is more suitable for the application can be obtained. Compared with normal charging method with parallel connected current limiting detention and charging method with dynamic irradian mode, constant load mode and constant voltage charging mode, the control scheme is proposed to shorten the charging time and increase the use of power generated from the PV array. From the simulation results and analysis conducted to determine the performance of the system in state transient and steady-state by using simulation software Matlab / Simulink. Response simulation results demonstrate the suitability of the proposed concept.

Adjustable electronic load-alarm relay

DOEpatents

Mason, Charles H.; Sitton, Roy S.

1976-01-01

This invention is an improved electronic alarm relay for monitoring the current drawn by an AC motor or other electrical load. The circuit is designed to measure the load with high accuracy and to have excellent alarm repeatability. Chattering and arcing of the relay contacts are minimal. The operator can adjust the set point easily and can re-set both the high and the low alarm points by means of one simple adjustment. The relay includes means for generating a signal voltage proportional to the motor current. In a preferred form of the invention a first operational amplifier is provided to generate a first constant reference voltage which is higher than a preselected value of the signal voltage. A second operational amplifier is provided to generate a second constant reference voltage which is lower than the aforementioned preselected value of the signal voltage. A circuit comprising a first resistor serially connected to a second resistor is connected across the outputs of the first and second amplifiers, and the junction of the two resistors is connected to the inverting terminal of the second amplifier. Means are provided to compare the aforementioned signal voltage with both the first and second reference voltages and to actuate an alarm if the signal voltage is higher than the first reference voltage or lower than the second reference voltage.

Simple programmable voltage reference for low frequency noise measurements

NASA Astrophysics Data System (ADS)

Ivanov, V. E.; Chye, En Un

2018-05-01

The paper presents a circuit design of a low-noise voltage reference based on an electric double-layer capacitor, a microcontroller and a general purpose DAC. A large capacitance value (1F and more) makes it possible to create low-pass filter with a large time constant, effectively reducing low-frequency noise beyond its bandwidth. Choosing the optimum value of the resistor in the RC filter, one can achieve the best ratio between the transient time, the deviation of the output voltage from the set point and the minimum noise cut-off frequency. As experiments have shown, the spectral density of the voltage at a frequency of 1 kHz does not exceed 1.2 nV/√Hz the maximum deviation of the output voltage from the predetermined does not exceed 1.4 % and depends on the holding time of the previous value. Subsequently, this error is reduced to a constant value and can be compensated.

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

NASA Astrophysics Data System (ADS)

Kuyama, Tomohiro; Eriguchi, Koji

2018-06-01

We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman’s effective medium approximation was employed for an optical model consisting of damaged and undamaged layers, which is applicable to an in-line monitoring by spectroscopic ellipsometry (SE). The optical thickness of the damaged layer — an oxidized layer — extended after plasma exposure, which was consistent with the results obtained by a diluted hydrofluoric acid (DHF) wet etching. The change in the conduction band edge of the damaged SiN films was presumed from two electrical techniques, i.e., current–voltage (I–V) measurement and time-dependent dielectric breakdown (TDDB) test with a constant voltage stress. The proposed techniques can be used for assigning the plasma-induced structural change in an SiN film widely used as an etch-protecting layer.

Control of piezoelectricity in amino acids by supramolecular packing

NASA Astrophysics Data System (ADS)

Guerin, Sarah; Stapleton, Aimee; Chovan, Drahomir; Mouras, Rabah; Gleeson, Matthew; McKeown, Cian; Noor, Mohamed Radzi; Silien, Christophe; Rhen, Fernando M. F.; Kholkin, Andrei L.; Liu, Ning; Soulimane, Tewfik; Tofail, Syed A. M.; Thompson, Damien

2018-02-01

Piezoelectricity, the linear relationship between stress and induced electrical charge, has attracted recent interest due to its manifestation in biological molecules such as synthetic polypeptides or amino acid crystals, including gamma (γ) glycine. It has also been demonstrated in bone, collagen, elastin and the synthetic bone mineral hydroxyapatite. Piezoelectric coefficients exhibited by these biological materials are generally low, typically in the range of 0.1-10 pm V-1, limiting technological applications. Guided by quantum mechanical calculations we have measured a high shear piezoelectricity (178 pm V-1) in the amino acid crystal beta (β) glycine, which is of similar magnitude to barium titanate or lead zirconate titanate. Our calculations show that the high piezoelectric coefficients originate from an efficient packing of the molecules along certain crystallographic planes and directions. The highest predicted piezoelectric voltage constant for β-glycine crystals is 8 V mN-1, which is an order of magnitude larger than the voltage generated by any currently used ceramic or polymer.

Control of piezoelectricity in amino acids by supramolecular packing.

PubMed

Guerin, Sarah; Stapleton, Aimee; Chovan, Drahomir; Mouras, Rabah; Gleeson, Matthew; McKeown, Cian; Noor, Mohamed Radzi; Silien, Christophe; Rhen, Fernando M F; Kholkin, Andrei L; Liu, Ning; Soulimane, Tewfik; Tofail, Syed A M; Thompson, Damien

2018-02-01

Piezoelectricity, the linear relationship between stress and induced electrical charge, has attracted recent interest due to its manifestation in biological molecules such as synthetic polypeptides or amino acid crystals, including gamma (γ) glycine. It has also been demonstrated in bone, collagen, elastin and the synthetic bone mineral hydroxyapatite. Piezoelectric coefficients exhibited by these biological materials are generally low, typically in the range of 0.1-10 pm V -1 , limiting technological applications. Guided by quantum mechanical calculations we have measured a high shear piezoelectricity (178 pm V -1 ) in the amino acid crystal beta (β) glycine, which is of similar magnitude to barium titanate or lead zirconate titanate. Our calculations show that the high piezoelectric coefficients originate from an efficient packing of the molecules along certain crystallographic planes and directions. The highest predicted piezoelectric voltage constant for β-glycine crystals is 8 V mN -1 , which is an order of magnitude larger than the voltage generated by any currently used ceramic or polymer.

Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory

NASA Astrophysics Data System (ADS)

Su, Po-Cheng; Hsu, Chun-Chi; Du, Sin-I.; Wang, Tahui

2017-12-01

Read operation induced disturbance in SET-state in a tungsten oxide resistive switching memory is investigated. We observe that the reduction of oxygen vacancy density during read-disturb follows power-law dependence on cumulative read-disturb time. Our study shows that the SET-state read-disturb immunity progressively degrades by orders of magnitude as SET/RESET cycle number increases. To explore the cause of the read-disturb degradation, we perform a constant voltage stress to emulate high-field stress effects in SET/RESET cycling. We find that the read-disturb failure time degradation is attributed to high-field stress-generated oxide traps. Since the stress-generated traps may substitute for some of oxygen vacancies in forming conductive percolation paths in a switching dielectric, a stressed cell has a reduced oxygen vacancy density in SET-state, which in turn results in a shorter read-disturb failure time. We develop an analytical read-disturb degradation model including both cycling induced oxide trap creation and read-disturb induced oxygen vacancy reduction. Our model can well reproduce the measured read-disturb failure time degradation in a cycled cell without using fitting parameters.

Fabrication of one-dimensional alumina photonic crystals by anodization using a modified pulse-voltage method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shou-Yi; Wang, Jian, E-mail: wangjian@nwnu.edu.cn; Wang, Gang

2015-08-15

Highlights: • The alumina multilayer structure with alternating high and low refractive index is fabricated. • This multilayer shows a strong photonic band gap (PBG) and vivid film colors. • The first PBG could be modulated easily by varying the duration time of constant high or low voltages. • Fabrication of the photonic crystal is obtained by directly electrochemical anodization. • The formation mechanism of multilayer is also discussed. - Abstract: The alumina nanolayer structure with alternating high and low porosities is conveniently fabricated by applying a modified pulse voltage waveform with constant high and low voltage. This structure showsmore » the well-defined layer in a long-range structural periodicity leads to a strong photonic band gap (PBG) from visible to near infrared and brilliant film colors. Compared with the previous reported tuning method, this method is more simple and flexible in tuning the PBG of photonic crystals (PCs). The effect of duration time of high, low and 0 V voltages on PBG is discussed. The first PBG could be modulated easily from the visible to near infrared region by varying the duration time of constant high or low voltages. It is also found that the 0 V lasting for appropriate time is helpful to improve the quality of the PCs. The formation mechanism of multilayer is also discussed.« less

The most energy efficient way to charge the capacitor in a RC circuit

NASA Astrophysics Data System (ADS)

Wang, Dake

2017-11-01

The voltage waveform that minimize the energy loss in the resistance when charging the capacitor in a resistor-capacitor circuit is investigated using the calculus of variation. A linear voltage ramp gives the best efficiency, which means a constant current source should be used for charging. Comparison between constant current source and battery-powered system is made to illustrate the energy advantage of the former.

A low-voltage fully balanced CMFF transconductor with improved linearity

NASA Astrophysics Data System (ADS)

Calvo, B.; Celma, S.; Alegre, J. P.; Sanz, M. T.

2007-05-01

This paper presents a new low-voltage pseudo-differential continuous-time CMOS transconductor for wideband applications. The proposed cell is based on a feedforward cancellation of the input common-mode signal and keeps the input common mode voltage constant, while the transconductance is easily tunable through a continuous bias voltage. Linearity is preserved during the tuning process for a moderate range of transconductance values. Simulation results for a 0.35 μm CMOS design show a 1:2 G m tuning range with an almost constant bandwidth over 600 MHz. Total harmonic distortion figures are below -60 dB over the whole range at 10 MHz up to a 200 μA p-p differential output. The proposed cell consumes less than 1.2 mW from a single 2.0 V supply.

Demonstration of Johnson noise thermometry with all-superconducting quantum voltage noise source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Takahiro, E-mail: yamada-takahiro@aist.go.jp; Urano, Chiharu; Maezawa, Masaaki

We present a Johnson noise thermometry (JNT) system based on an integrated quantum voltage noise source (IQVNS) that has been fully implemented using superconducting circuit technology. To enable precise measurement of Boltzmann's constant, an IQVNS chip was designed to produce intrinsically calculable pseudo-white noise to calibrate the JNT system. On-chip real-time generation of pseudo-random codes via simple circuits produced pseudo-voltage noise with a harmonic tone interval of less than 1 Hz, which was one order of magnitude finer than the harmonic tone interval of conventional quantum voltage noise sources. We estimated a value for Boltzmann's constant experimentally by performing JNT measurementsmore » at the temperature of the triple point of water using the IQVNS chip.« less

Enhanced electrohydrodynamic force generation in a two-stroke cycle dielectric-barrier-discharge plasma actuator

NASA Astrophysics Data System (ADS)

Sato, Shintaro; Takahashi, Masayuki; Ohnishi, Naofumi

2017-05-01

An approach for electrohydrodynamic (EHD) force production is proposed with a focus on a charge cycle on a dielectric surface. The cycle, consisting of positive-charging and neutralizing strokes, is completely different from the conventional methodology, which involves a negative-charging stroke, in that the dielectric surface charge is constantly positive. The two-stroke charge cycle is realized by applying a DC voltage combined with repetitive pulses. Simulation results indicate that the negative pulse eliminates the surface charge accumulated during constant voltage phase, resulting in repetitive EHD force generation. The time-averaged EHD force increases almost linearly with increasing repetitive pulse frequency and becomes one order of magnitude larger than that driven by the sinusoidal voltage, which has the same peak-to-peak voltage.

A variable-speed, constant-frequency wind power generation scheme using a slip-ring induction generator

NASA Astrophysics Data System (ADS)

Velayudhan, C.; Bundell, J. H.

This paper investigates a variable-speed, constant-frequency double output induction generator which is capable of absorbing the mechanical energy from a fixed pitch wind turbine and converting it into electrical energy at constant grid voltage and frequency. Rotor power at varying voltage and frequency is either fed to electronically controlled resistances and used as heat energy or is rectified, inverted by a controllable line-commutated inverter and returned to the grid. Optimal power tracking is by means of an adaptive controller which controls the developed torque of the generator by monitoring the shaft speed.

Impact ionization and transport properties of hexagonal boron nitride in a constant-voltage measurement

NASA Astrophysics Data System (ADS)

Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

2018-01-01

The electrical evaluation of the crystallinity of hexagonal boron nitride (h -BN) is still limited to the measurement of dielectric breakdown strength, in spite of its importance as the substrate for two-dimensional van der Waals heterostructure devices. In this study, physical phenomena for degradation and failure in exfoliated single-crystal h -BN films were investigated using the constant-voltage stress test. At low electrical fields, the current gradually reduced and saturated with time, while the current increased at electrical fields higher than ˜8 MV /cm and finally resulted in the catastrophic dielectric breakdown. These transient behaviors may be due to carrier trapping to the defect sites in h -BN because trapped carriers lower or enhance the electrical fields in h -BN depending on their polarities. The key finding is the current enhancement with time at the high electrical field, suggesting the accumulation of electrons generated by the impact ionization process. Therefore, a theoretical model including the electron generation rate by an impact ionization process was developed. The experimental data support the expected degradation mechanism of h -BN. Moreover, the impact ionization coefficient was successfully extracted, which is comparable to that of Si O2 , even though the fundamental band gap for h -BN is smaller than that for Si O2 . Therefore, the dominant impact ionization in h -BN could be band-to-band excitation, not defect-assisted impact ionization.

Distinguishing mechanisms for alternans in cardiac cells using constant-diastolic-interval pacing

NASA Astrophysics Data System (ADS)

Cherry, Elizabeth M.

2017-09-01

Alternans, a proarrhythmic dynamical state in which cardiac action potentials alternate between long and short durations despite a constant pacing period, traditionally has been explained at the cellular level using nonlinear dynamics principles under the assumption that the action potential duration (APD) is determined solely by the time elapsed since the end of the previous action potential, called the diastolic interval (DI). In this scenario, APDs at a steady state should be the same provided that the preceding DIs are the same. Nevertheless, experiments attempting to eliminate alternans by dynamically adjusting the timing of pacing stimuli to keep the DI constant showed that alternans persisted, contradicting the traditional theory. It is now widely known that alternans also can arise from a different mechanism associated with intracellular calcium cycling. Our goal is to determine whether intracellular calcium dynamics can explain the experimental findings regarding the persistence of alternans despite a constant DI. For this, we use mathematical models capable of producing alternans through both voltage- and calcium-mediated mechanisms. We show that for voltage-driven alternans, action potentials elicited from a constant-DI protocol are always the same. However, in the case of calcium-driven alternans, the constant-DI protocol can result in alternans. Reducing the strength of the calcium instability progressively reduces and finally eliminates constant-DI alternans. Our findings suggest that screening for the presence of alternans using a constant-DI protocol has the potential for differentiating between voltage-driven and calcium-driven alternans.

Gas composition sensing using carbon nanotube arrays

NASA Technical Reports Server (NTRS)

Li, Jing (Inventor); Meyyappan, Meyya (Inventor)

2008-01-01

A method and system for estimating one, two or more unknown components in a gas. A first array of spaced apart carbon nanotubes (''CNTs'') is connected to a variable pulse voltage source at a first end of at least one of the CNTs. A second end of the at least one CNT is provided with a relatively sharp tip and is located at a distance within a selected range of a constant voltage plate. A sequence of voltage pulses {V(t.sub.n)}.sub.n at times t=t.sub.n (n=1, . . . , N1; N1.gtoreq.3) is applied to the at least one CNT, and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of a curve I(t.sub.n) for current or a curve e(t.sub.n) for electric charge transported from the at least one CNT to the constant voltage plate. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas.

Thermally-induced voltage alteration for analysis of microelectromechanical devices

DOEpatents

Walraven, Jeremy A.; Cole, Jr., Edward I.

2002-01-01

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing a microelectromechanical (MEM) device with or without on-board integrated circuitry. One embodiment of the TIVA apparatus uses constant-current biasing of the MEM device while scanning a focused laser beam over electrically-active members therein to produce localized heating which alters the power demand of the MEM device and thereby changes the voltage of the constant-current source. This changing voltage of the constant-current source can be measured and used in combination with the position of the focused and scanned laser beam to generate an image of any short-circuit defects in the MEM device (e.g. due to stiction or fabrication defects). In another embodiment of the TIVA apparatus, an image can be generated directly from a thermoelectric potential produced by localized laser heating at the location of any short-circuit defects in the MEM device, without any need for supplying power to the MEM device. The TIVA apparatus can be formed, in part, from a scanning optical microscope, and has applications for qualification testing or failure analysis of MEM devices.

Precision envelope detector and linear rectifier circuitry

DOEpatents

Davis, Thomas J.

1980-01-01

Disclosed is a method and apparatus for the precise linear rectification and envelope detection of oscillatory signals. The signal is applied to a voltage-to-current converter which supplies current to a constant current sink. The connection between the converter and the sink is also applied through a diode and an output load resistor to a ground connection. The connection is also connected to ground through a second diode of opposite polarity from the diode in series with the load resistor. Very small amplitude voltage signals applied to the converter will cause a small change in the output current of the converter, and the difference between the output current and the constant current sink will be applied either directly to ground through the single diode, or across the output load resistor, dependent upon the polarity. Disclosed also is a full-wave rectifier utilizing constant current sinks and voltage-to-current converters. Additionally, disclosed is a combination of the voltage-to-current converters with differential integrated circuit preamplifiers to boost the initial signal amplitude, and with low pass filtering applied so as to obtain a video or signal envelope output.

Failure of ESI Spectra to Represent Metal-Complex Solution Composition: A Study of Lanthanide-Carboxylate Complexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

McDonald, Luther W.; Campbell, James A.; Clark, Sue B.

2014-01-21

Electrospray ionization - mass spectrometry (ESI-MS) was used for the characterization of uranyl complexed to tributyl phosphate (TBP) and dibutyl phosphate (DBP). The stoichiometry of uranyl with TBP and DBP was determined, and the gas phase speciation was found to be dependent on the cone voltage applied to induce fragmentation on the gas phase complexes. To quantitatively compare the gas phase distribution of species to solution, apparent stability constants were calculated. With a cone voltage of 80V, the apparent stability constants for the complexes UO2(NO3)2•2TBP, UO2(NO3)2(H2O)•2TBP, and UO2(DBP)+ were determined. With a lower cone voltage applied, larger complexes were observedmore » and stability constants for the complexes UO2(NO3)2•3TBP and UO2(DBP)42- were determined.« less

Electromechanical conversion efficiency for dielectric elastomer generator in different energy harvesting cycles

NASA Astrophysics Data System (ADS)

Cao, Jian-Bo; E, Shi-Ju; Guo, Zhuang; Gao, Zhao; Luo, Han-Pin

2017-11-01

In order to improve electromechanical conversion efficiency for dielectric elastomer generators (DEG), on the base of studying DEG energy harvesting cycles of constant voltage, constant charge and constant electric field intensity, a new combined cycle mode and optimization theory in terms of the generating mechanism and electromechanical coupling process have been built. By controlling the switching point to achieve the best energy conversion cycle, the energy loss in the energy conversion process is reduced. DEG generating test bench which was used to carry out comparative experiments has been established. Experimental results show that the collected energy in constant voltage cycle, constant charge cycle and constant electric field intensity energy harvesting cycle decreases in turn. Due to the factors such as internal resistance losses, electrical losses and so on, actual energy values are less than the theoretical values. The electric energy conversion efficiency by combining constant electric field intensity cycle with constant charge cycle is larger than that of constant electric field intensity cycle. The relevant conclusions provide a basis for the further applications of DEG.

Stress-Dependent Voltage Offsets From Polymer Insulators Used in Rock Mechanics and Material Testing

NASA Technical Reports Server (NTRS)

Carlson, G. G.; Dahlgren, Robert; Gray, Amber; Vanderbilt, V. C.; Freund, F.; Johnston, M. J.; Dunson, C.

2013-01-01

Dielectric insulators are used in a variety of laboratory settings when performing experiments in rock mechanics, petrology, and electromagnetic studies of rocks in the fields of geophysics,material science, and civil engineering. These components may be used to electrically isolate geological samples from the experimental equipment, to perform a mechanical compliance function between brittle samples and the loading equipment, to match ultrasonic transducers, or perform other functions. In manyexperimental configurations the insulators bear the full brunt of force applied to the sample but do not need to withstand high voltages, therefore the insulators are often thin sheets of mechanically tough polymers. From an instrument perspective, transduction from various types of mechanical perturbation has beenqualitatively compared for a number of polymers [1, 2] and these error sources are readily apparent duringhigh-impedance measurements if not mitigated. However even when following best practices, a force dependent voltage signal still remains and its behavior is explored in this presentation. In this experimenttwo thin sheets (0.25 mm) of high-density polyethylene (HDPE) were set up in a stack, held alternatelybetween three aluminum bars; this stack was placed on the platen of a 60T capacity hydraulic testingmachine. The surface area, A, over which the force is applied to the PE sheets in this sandwich is roughly 40 square cm, each sheet forming a parallel-plate capacitor having roughly 320 pF [3], assuming therelative dielectric permittivity of PE is approximately 2.3. The outer two aluminum bars were connected to the LO input ofthe electrometer and the central aluminum bar was connected to the HI input of a Keithley model 617 electrometer. Once the stack is mechanically well-seated with no air gaps, the voltage offset is observed tobe a linear function of the baseline voltage for a given change in applied force. For a periodically appliedforce of 66.7 kN the voltage offsets were measured as a function of initial voltage, and these data were fitwith a linear function that was constrained to pass through the origin. The best fit solution had a correlation coefficient of R=0.85 and a slope of approximately -0.0228 volts/volt. The voltage offset when normalizedis demonstrated to be constant -2.28% for both positive and negative polarities over nearly 3 orders ofbaseline voltage magnitude. From this, the voltage-force coefficient is derived to be -0.34 ppm/N. Thiscorrelates well to a first-order parallel plate capacitor model that assumes constant area, and smalldeformation such that the polymer may be mechanically modeled by a spring that obeys Hookes law. Thissimple model predicts that the coefficient of proportionality is a function of Youngs modulus E= 0.8 GPaand surface area of the insulator, theoretically -1EA= -0.31 ppm/N. The outcome of this work is animproved insulator made from ultra-high molecular weight (UHMW) polyethylene and other approachestoward the minimization of and compensation for these experimental artifacts.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Capacitors in Series: A Laboratory Activity to Promote Critical Thinking.

ERIC Educational Resources Information Center

Noll, Ellis D.; Kowalski, Ludwik

1996-01-01

Describes experiments designed to explore the distribution of potential difference between two uncharged capacitors when they are suddenly connected to a source of constant voltage. Enables students to explore the evolution of a system in which initial voltage distribution depends on capacitor values, and the final voltage distribution depends on…

Associating ground magnetometer observations with current or voltage generators

NASA Astrophysics Data System (ADS)

Hartinger, M. D.; Xu, Z.; Clauer, C. R.; Yu, Y.; Weimer, D. R.; Kim, H.; Pilipenko, V.; Welling, D. T.; Behlke, R.; Willer, A. N.

2017-07-01

A circuit analogy for magnetosphere-ionosphere current systems has two extremes for drivers of ionospheric currents: ionospheric electric fields/voltages constant while current/conductivity vary—the "voltage generator"—and current constant while electric field/conductivity vary—the "current generator." Statistical studies of ground magnetometer observations associated with dayside Transient High Latitude Current Systems (THLCS) driven by similar mechanisms find contradictory results using this paradigm: some studies associate THLCS with voltage generators, others with current generators. We argue that most of this contradiction arises from two assumptions used to interpret ground magnetometer observations: (1) measurements made at fixed position relative to the THLCS field-aligned current and (2) negligible auroral precipitation contributions to ionospheric conductivity. We use observations and simulations to illustrate how these two assumptions substantially alter expectations for magnetic perturbations associated with either a current or a voltage generator. Our results demonstrate that before interpreting ground magnetometer observations of THLCS in the context of current/voltage generators, the location of a ground magnetometer station relative to the THLCS field-aligned current and the location of any auroral zone conductivity enhancements need to be taken into account.

Viscoelastic performance of dielectric elastomer subject to different voltage stimulation

NASA Astrophysics Data System (ADS)

Sheng, Junjie; Zhang, Yuqing; Liu, Lei; Li, Bo; Chen, Hualing

2017-04-01

Dielectric elastomer (DE) is capable of giant deformation subject to an electric field, and demonstrates significant advantages in the potentially application of soft machines with muscle-like characteristics. Due to an inherent property of all macromolecular materials, DE exhibits strong viscoelastic properties. Viscoelasticity could cause a time-dependent deformation and lower the response speed and energy conversion efficiency of DE based actuators, thus strongly affect its electromechanical performance and applications. Combining with the rheological model of viscoelastic relaxation, the viscoelastic performance of a VHB membrane in a circular actuator configuration undergoing separately constant, ramp and sinusoidal voltages are analyzed both theoretically and experimentally. The theoretical results indicated that DE could attain a big deformation under a small constant voltage with a longer time or under a big voltage with a shorter time. The model also showed that a higher critical stretch could be achieved by applying ramping voltage with a lower rate and the stretch magnitude under sinusoidal voltage is much larger at a relatively low frequency. Finally, experiments were designed to validate the simulation and show well consistent with the simulation results.

Dual-bridge LLC-SRC with extended voltage range for deeply depleted PEV battery charging

NASA Astrophysics Data System (ADS)

Shahzad, M. Imran; Iqbal, Shahid; Taib, Soib

2017-11-01

This paper proposes a dual-bridge LLC series resonant converter with hybrid-rectifier for achieving extended charging voltage range of 50-420 V for on-board battery charger of plug-in electric vehicle for normal and deeply depleted battery charging. Depending upon the configuration of primary switching network and secondary rectifier, the proposed topology has three operating modes as half-bridge with bridge rectifier (HBBR), full-bridge with bridge rectifier (FBBR) and full-bridge with voltage doubler (FBVD). HBBR, FBBR and FBVD operating modes of converter achieve 50-125, 125-250 and 250-420 V voltage ranges, respectively. For voltage above 62 V, the converter operates below resonance frequency zero voltage switching region with narrow switching frequency range for soft commutation of secondary diodes and low turn-off current of MOSFETs to reduce switching losses. The proposed converter is simulated using MATLAB Simulink and a 1.5 kW laboratory prototype is also built to validate the operation of proposed topology. Simulation and experimental results show that the converter meets all the charging requirements for deeply depleted to fully charged battery using constant current-constant voltage charging method with fixed 400 V DC input and achieves 96.22% peak efficiency.

A Brief Review of Recent Superconductivity Research at NIST

PubMed Central

Lundy, D. R.; Swartzendruber, L. J.; Bennett, L. H.

1989-01-01

A brief overview of recent superconductivity research at NIST is presented. Emphasis is placed on the new high-temperature oxide superconductors, though mention is made of important work on low-temperature superconductors, and a few historical notes are included. NIST research covers a wide range of interests. For the new high-temperature superconductors, research activities include determination of physical properties such as elastic constants and electronic structure, development of new techniques such as magnetic-field modulated microwave-absorption and determination of phase diagrams and crystal structure. For the low-temperature superconductors, research spans studying the effect of stress on current density to the fabrication of a new Josephson junction voltage standard. PMID:28053408

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

[Study of microorganism sterilization by instant microwave and electromagnetic pulse].

PubMed

Lu, Zhiyuan; Shi, Pinpin; Zhu, Manzuo; Sun, Wenquan; Ding, Hua; Hou, Jianqiang

2008-08-01

The sterilization effects of constant electromagnetic wave and instant pulse on foods and traditional Chinese medical pills are introduced in this paper. From the velum's voltage variation caused by the outward electric filed,the dielectric properties of membranaceous ion and the pass rate of the membranaceous ion, we could analyze the biological heating effect and the biological non-heating effect. The sterilization effect of constant electromagnetic wave is based on the biological heating effect, while the instant electromagnetic pulse is based on the biological non-heating effect. With the applied electronic field, the voltage of membrane could increase, which results in the gates of K+ open, and the flowing out of K+. And the variation of the membranaceous voltage makes the gates of Ca2+ open. The Ca2+ of large consistency could come into the cell by the gradient of voltage. It could induce the death of the cells. The greater the variation of membranaceous voltage becomes, the higher will be the death rate of the cells.

Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

NASA Astrophysics Data System (ADS)

Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

2018-05-01

Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes.

PubMed

Kuekes, Philip J; Robinett, Warren; Roth, Ron M; Seroussi, Gadiel; Snider, Gregory S; Stanley Williams, R

2006-02-28

The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage margin of the memory system based on a particular code. We determine a purely code-theoretic criterion for selecting codes that will yield memories with large voltage margins, which is to minimize the ratio of the maximum to the minimum Hamming distance between distinct codewords. For the specific example of a 64 × 64 crossbar, we discuss what codes provide optimal performance for a memory.

Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Tsao, Yu-Ching; Chang, Ting-Chang; Chen, Hua-Mao; Chen, Bo-Wei; Chiang, Hsiao-Cheng; Chen, Guan-Fu; Chien, Yu-Chieh; Tai, Ya-Hsiang; Hung, Yu-Ju; Huang, Shin-Ping; Yang, Chung-Yi; Chou, Wu-Ching

2017-01-01

This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software.

Constant-current regulator improves tunnel diode threshold-detector performance

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

Low noise constant current source for bias dependent noise measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talukdar, D.; Bose, Suvendu; Bardhan, K. K.

2011-01-15

A low noise constant current source used for measuring the 1/f noise in disordered systems in ohmic as well as nonohmic regime is described. The source can supply low noise constant current starting from as low as 1 {mu}A to a few tens of milliampere with a high voltage compliance limit of around 20 V. The constant current source has several stages, which can work in a standalone manner or together to supply the desired value of load current. The noise contributed by the current source is very low in the entire current range. The fabrication of a low noisemore » voltage preamplifier modified for bias dependent noise measurements and based on the existing design available in the MAT04 data sheet is also described.« less

dc analysis and design of zero-voltage-switched multi-resonant converters

NASA Astrophysics Data System (ADS)

Tabisz, Wojciech A.; Lee, Fred C.

Recently introduced multiresonant converters (MRCs) provide zero-voltage switching (ZVS) of both active and passive switches and offer a substantial reduction of transistor voltage stress and an increase of load range, compared to their quasi-resonant converter counterparts. Using the resonant switch concept, a simple, generalized analysis of ZVS MRCs is presented. The conversion ratio and voltage stress characteristics are derived for basic ZVS MRCs, including buck, boost, and buck/boost converters. Based on the analysis, a design procedure that optimizes the selection of resonant elements for maximum conversion efficiency is proposed.

A Study on the Effect of Electrodeposition Parameters on the Morphology of Porous Nickel Electrodeposits

NASA Astrophysics Data System (ADS)

Sengupta, Srijan; Patra, Arghya; Jena, Sambedan; Das, Karabi; Das, Siddhartha

2018-03-01

In this study, the electrodeposition of nickel foam by dynamic hydrogen bubble-template method is optimized, and the effects of key deposition parameters (applied voltage and deposition time) and bath composition (concentration of Ni2+, pH of the bath, and roles of Cl- and SO4 2- ions) on pore size, distribution, and morphology and crystal structure are studied. Nickel deposit from 0.1 M NiCl2 bath concentration is able to produce the honeycomb-like structure with regular-sized holes. Honeycomb-like structure with cauliflower morphology is deposited at higher applied voltages of 7, 8, and 9 V; and a critical time (>3 minutes) is required for the development of the foamy structure. Compressive residual stresses are developed in the porous electrodeposits after 30 seconds of deposition time (-189.0 MPa), and the nature of the residual stress remains compressive upto 10 minutes of deposition time (-1098.6 MPa). Effect of pH is more pronounced in a chloride bath compared with a sulfate bath. The increasing nature of pore size in nickel electrodeposits plated from a chloride bath (varying from 21 to 48 μm), and the constant pore size (in the range of 22 to 24 μm) in deposits plated from a sulfate bath, can be ascribed to the striking difference in the magnitude of the corresponding current-time profiles.

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Godlewski, M. P.

1984-01-01

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

Interfacial morphology of low-voltage anodic aluminium oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Naiping; Dongcinn, Xuecheng; He, Xueying

X-ray reflectivity (XRR) and neutron reflectivity (NR), as well as ultra-smallangle X-ray scattering (USAXS), are used to examine the in-plane and surfacenormal structure of anodic films formed on aluminium alloy AA2024 and pure aluminium. Aluminium and alloy films up to 3500 A thick were deposited on Si wafers by electron beam evaporation of ingots. Porous anodic aluminium oxide (AAO) films are formed by polarizing at constant voltage up to 20 V noble to the open circuit potential. The voltage sweet spot (5 V) appropriate for constant-voltage anodization of such thin films was determined for both alloy and pure Al. Inmore » addition, a new concurrent voltage- and current-control protocol was developed to prepare films with larger pores (voltages higher than 5 V), but formed at a controlled current so that pore growth is slow enough to avoid stripping the aluminium substrate layer. USAXS shows that the pore size and interpore spacing are fixed in the first 10 s after initiation of anodization. Pores then grow linearly in time, at constant radius and interpore spacing. Using a combination of XRR and NR, the film density and degree of hydration of the films were determined from the ratio of scattering length densities. Assuming a chemical formula Al2O3xH2O, it was found that x varies from 0.29 for the native oxide to 1.29 for AAO grown at 20 V under concurrent voltage and current control. The average AAO film density of the porous film at the air surface is 2.45 (20) g cm3. The density of the barrier layer at the metal interface is 2.9 (4) g cm3, which indicates that this layer is also quite porous« less

High-voltage isolation transformer for sub-nanosecond rise time pulses constructed with annular parallel-strip transmission lines.

PubMed

Homma, Akira

2011-07-01

A novel annular parallel-strip transmission line was devised to construct high-voltage high-speed pulse isolation transformers. The transmission lines can easily realize stable high-voltage operation and good impedance matching between primary and secondary circuits. The time constant for the step response of the transformer was calculated by introducing a simple low-frequency equivalent circuit model. Results show that the relation between the time constant and low-cut-off frequency of the transformer conforms to the theory of the general first-order linear time-invariant system. Results also show that the test transformer composed of the new transmission lines can transmit about 600 ps rise time pulses across the dc potential difference of more than 150 kV with insertion loss of -2.5 dB. The measured effective time constant of 12 ns agreed exactly with the theoretically predicted value. For practical applications involving the delivery of synchronized trigger signals to a dc high-voltage electron gun station, the transformer described in this paper exhibited advantages over methods using fiber optic cables for the signal transfer system. This transformer has no jitter or breakdown problems that invariably occur in active circuit components.

Load characteristics of wireless power transfer system with different resonant types and resonator numbers

NASA Astrophysics Data System (ADS)

Zhang, Yiming; Zhao, Zhengming; Chen, Kainan; Fan, Jun

2017-05-01

Wireless Power Transfer (WPT) has been the research focus and applied in many fields. Normally power is transferred wirelessly to charge the battery, which requires specific load characteristics. The load characteristics are essential for the design and operation of the WPT system. This paper investigates the load characteristics of the WPT system with different resonant types and resonator numbers. It is found that in a WPT system with series or LCL resonance under a constant voltage source, the load characteristic is determined by the number of inductors. Even number of inductors results in a constant current characteristic and odd number constant voltage characteristic. Calculations, simulations, and experiments verify the analysis.

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

NASA Astrophysics Data System (ADS)

Wang, Ning; Wang, Hui; Lin, Xinpeng; Qi, Yongle; Duan, Tianli; Jiang, Lingli; Iervolino, Elina; Cheng, Kai; Yu, Hongyu

2017-09-01

Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

CFAVC scheme for high frequency series resonant inverter-fed domestic induction heating system

NASA Astrophysics Data System (ADS)

Nagarajan, Booma; Reddy Sathi, Rama

2016-01-01

This article presents the investigations on the constant frequency asymmetric voltage cancellation control in the AC-AC resonant converter-fed domestic induction heating system. Conventional fixed frequency control techniques used in the high frequency converters lead to non-zero voltage switching operation and reduced output power. The proposed control technique produces higher output power than the conventional fixed-frequency control strategies. In this control technique, zero-voltage-switching operation is maintained during different duty cycle operation for reduction in the switching losses. Complete analysis of the induction heating power supply system with asymmetric voltage cancellation control is discussed in this article. Simulation and experimental study on constant frequency asymmetric voltage cancellation (CFAVC)-controlled full bridge series resonant inverter is performed. Time domain simulation results for the open and closed loop of the system are obtained using MATLAB simulation tool. The simulation results prove the control of voltage and power in a wide range. PID controller-based closed loop control system achieves the voltage regulation of the proposed system for the step change in load. Hardware implementation of the system under CFAVC control is done using the embedded controller. The simulation and experimental results validate the performance of the CFAVC control technique for series resonant-based induction cooking system.

Full-order observer for direct torque control of induction motor based on constant V/F control technique.

PubMed

Pimkumwong, Narongrit; Wang, Ming-Shyan

2018-02-01

This paper presents another control method for the three-phase induction motor that is direct torque control based on constant voltage per frequency control technique. This method uses the magnitude of stator flux and torque errors to generate the stator voltage and phase angle references for controlling the induction motor by using constant voltage per frequency control method. Instead of hysteresis comparators and optimum switching table, the PI controllers and space vector modulation technique are used to reduce torque and stator-flux ripples and achieve constant switching frequency. Moreover, the coordinate transformations are not required. To implement this control method, a full-order observer is used to estimate stator flux and overcome the problems from drift and saturation in using pure integrator. The feedback gains are designed by simple manner to improve the convergence of stator flux estimation, especially in low speed range. Furthermore, the necessary conditions to maintain the stability for feedback gain design are introduced. The simulation and experimental results show accurate and stable operation of the introduced estimator and good dynamic response of the proposed control method. Copyright © 2017 ISA. Published by Elsevier Ltd. All rights reserved.

Experimental validation of prototype high voltage bushing

NASA Astrophysics Data System (ADS)

Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

2017-08-01

Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

Protection of Electrical Systems from EM Hazards - Design Guide.

DTIC Science & Technology

1981-09-01

cm) Surface flashover Voltage (KV/cm) This criterion should be met for lighting voltage stresses of either polarity applied at up to 1000 KV/v sec rate...suppressor devices can be predicted. The part failure rate models in the handbook include the effects of part electrical stress , thermal stress , operating... stress . This test series contained over one million device hours of operation at temperatures uF to 145°C. The average duration of testing ranges from

Removal of sodium chloride from human urine via batch recirculation electrodialysis at constant applied voltage

NASA Technical Reports Server (NTRS)

Gordils-Striker, Nilda E.; Colon, Guillermo

2003-01-01

The removal of sodium chloride (NaCl) from human urine using a six-compartment electrodialysis cell with batch recirculation mode of operation for use in advanced life support systems (ALSS) was studied. From the results obtained, batch recirculation at constant applied voltage yields high values (approximately 94% of NaCl removal. Based on the results, the initial rate of NaCl removal was correlated to a power function of the applied voltage: -r=2.0 x 10(-4)E(3.8). With impedance spectroscopy methods, it was also found that the anion membranes were more affected by fouling with an increase of the ohmic resistance of almost 11% compared with 7.4% for the cationic ones.

HIT-SI Injector Voltage Measurements Using Injector Langmuir Probes

NASA Astrophysics Data System (ADS)

Aboul Hosn, Rabih; Smith, Roger; Jarboe, Thomas

2006-10-01

A pair of Langmuir probe arrays have been designed and built to measure floating potentials of the plasma at the injector mouth of the HIT-SI device. The Helicity Injected Torus using Steady Inductive Helicity Injection (HIT-SI) [1,2] is a ``bow tie'' spheromak using an electrodeless formation and sustainment concept. HIT-SI is powered by two inductive helicity injectors operated in quadrature to maintain a constant helicity injection rate. The electric probes consist of an array of four floating potential Langmuir probes measuring the voltage distribution in each injector from the shell to midpoint of the injector mouth. The probe measurements combine to determine the part of the injector loop voltage driving the n = 0 spheromak equilibrium region. Preliminary data suggest the spheromak voltage is the loop voltage minus the nearly constant injector voltage of 150-180 volts. These probe data will be used to calculate the helicity decay time of the spheromak. [1] T. R. Jarboe. Steady inductive helicity injection and its application to a high-beta spheromak. Fusion Technology, 36(1):85--91, July 1999. [2] P.E.Sieck et al., ``Demonstration of Steady Inductive Helicity Injection'', Nuc. Fusion, in press (2006).

Acetylcholine-induced current in perfused rat myoballs

PubMed Central

1980-01-01

Spherical "myoballs" were grown under tissue culture conditions from striated muscle of neonatal rat thighs. The myoballs were examined electrophysiologically with a suction pipette which was used to pass current and perfuse internally. A microelectrode was used to record membrane potential. Experiments were performed with approximately symmetrical (intracellular and extracellular) sodium aspartate solutions. The resting potential, acetylcholine (ACh) reversal potential, and sodium channel reversal potential were all approximately 0 mV. ACh-induced currents were examined by use of both voltage jumps and voltage ramps in the presence of iontophoretically applied agonist. The voltage-jump relaxations had a single exponential time-course. The time constant, tau, was exponentially related to membrane potential, increasing e-fold for 81 mV hyperpolarization. The equilibrium current- voltage relationship was also approximately exponential, from -120 to +81 mV, increasing e-fold for 104 mV hyperpolarization. The data are consistent with a first-order gating process in which the channel opening rate constant is slightly voltage dependent. The instantaneous current-voltage relationship was sublinear in the hyperpolarizing direction. Several models are discussed which can account for the nonlinearity. Evidence is presented that the "selectivity filter" for the ACh channel is located near the intracellular membrane surface. PMID:7381423

Ozone generation by negative direct current corona discharges in dry air fed coaxial wire-cylinder reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yehia, Ashraf; Mizuno, Akira

An analytical study was made in this paper for calculating the ozone generation by negative dc corona discharges. The corona discharges were formed in a coaxial wire-cylinder reactor. The reactor was fed by dry air flowing with constant rates at atmospheric pressure and room temperature, and stressed by a negative dc voltage. The current-voltage characteristics of the negative dc corona discharges formed inside the reactor were measured in parallel with concentration of the generated ozone under different operating conditions. An empirical equation was derived from the experimental results for calculating the ozone concentration generated inside the reactor. The results, thatmore » have been recalculated by using the derived equation, have agreed with the experimental results over the whole range of the investigated parameters, except in the saturation range for the ozone concentration. Therefore, the derived equation represents a suitable criterion for expecting the ozone concentration generated by negative dc corona discharges in dry air fed coaxial wire-cylinder reactors under any operating conditions in range of the investigated parameters.« less

Characteristics of electroluminescence phenomenon in virgin and thermally aged LDPE

NASA Astrophysics Data System (ADS)

Bani, N. A.; Abdul-Malek, Z.; Ahmad, H.; Muhammad-Sukki, F.; Mas'ud, A. A.

2015-08-01

High voltage cable requires a good insulating material such as low density polyethylene (LDPE) to be able to operate efficiently in high voltage stresses and high temperature environment. However, any polymeric material will experience degradation after prolonged application of high electrical stresses or other extreme conditions. The continuous degradation will shorten the life of a cable therefore further understanding on the behaviour of the aged high voltage cable needs to be undertaken. This may be observed through electroluminescence (EL) measurement. EL occurs when a solid-state material is subjected to a high electrical field stress and associated with the generation of charge carriers within the polymeric material and that these charges can be produced by injection, de-trapping and field-dissociation at the metal-polymer interface. The behaviour of EL emission can be affected by applied field, applied frequency, ageing time, ageing temperature and types of materials, among others. This paper focuses on the measurement of EL emission of additive-free LDPE thermally aged at different temperature subjected to varying electric stresses at 50Hz. It can be observed that EL emission increases as voltage applied is increased. However, EL emission decreases as ageing temperature is increased for varying applied voltage.

Investigations into the use of energy storage in power system applications

NASA Astrophysics Data System (ADS)

Leung, Ka Kit

This thesis embodies research work on the design and implementation of novel fast responding battery energy storage systems, which, with sufficient capacity and rating, could remove the uncertainty in forecasting the annual peak demand. They would also benefit the day to day operation by curtailing the fastest demand variations, particularly at the daily peak periods. Energy storage that could curtail peak demands, when the most difficult operational problems occur offers a promising approach. Although AC energy cannot be stored, power electronic developments offer a fast responding interface between the AC network and DC energy stored in batteries. The attractive feature of the use of this energy storage could most effectively be located near the source of load variations, i.e. near consumers in the distribution networks. The proposed, three phase multi-purpose, Battery Energy Storage System will provide active and reactive power independent of the supply voltage with excellent power quality in terms of its waveform. Besides the above important functions applied at the distribution side of the utility, several new topologies have been developed to provide both Dynamic Voltage Regulator (DVR) and Unified Power Flow Controller (UPFC) functions for line compensation. These new topologies can provide fast and accurate control of power flow along a distribution corridor. The topologies also provide for fast damping of system oscillation due to transient or dynamic disturbances. Having demonstrated the various functions that the proposed Battery Energy Storage System can provide, the final part of the thesis investigates means of improving the performance of the proposed BESS. First, there is a need to reduce the switching losses by using soft switching instead of hard switching. A soft switching inverter using a parallel resonant dc-link (PRDCL) is proposed for use with the proposed BESS. The proposed PRDCL suppresses the dc-link voltage to zero for a very short time to allow zero voltage switching of inverter main switches without imposing excessive voltage and current stresses. Finally, in practice the battery terminal voltage fluctuates significantly as large current is being drawn or absorbed by the battery bank. When a hysteresis controller is used to control the supply line current, the ripple magnitude and frequency of the controlled current is highly dependent on the battery voltage, line inductance and the band limits of the controller. Even when these parameters are constant, the switching frequency can vary over quite a large range. A novel method is proposed to overcome this problem by controlling the dc voltage level by means of a dc-dc converter to provide a controllable voltage at the inverter dc terminal irrespective of the battery voltage variations. By proper control of the magnitude and frequency of the output of the DC-DC converter, the switching frequency can be made close to constant. A mathematical proof has been formulated and results from the simulation confirm that using the proposed technique, the frequency band has been significantly reduced and for the theoretical case, a single switching frequency is observed. The main disadvantage is the need to have an extra dc-dc converter, but this is relatively cheap and easy to obtain.

Static charge outside chamber induces dielectric breakdown of solid-state nanopore membranes

NASA Astrophysics Data System (ADS)

Matsui, Kazuma; Goto, Yusuke; Yanagi, Itaru; Yanagawa, Yoshimitsu; Ishige, Yu; Takeda, Ken-ichi

2018-04-01

Reducing device capacitance is effective for decreasing current noise observed in a solid-state nanopore-based DNA sequencer. On the other hand, we have recently found that voltage stress causes pinhole-like defects in such low-capacitance devices. The origin of voltage stress, however, has not been determined. In this research, we identified that a dominant origin is static charge on the outer surface of a flow cell. Even though the outer surface was not in direct contact with electrolytes in the flow cell, the charge induces high voltage stress on a membrane according to the capacitance coupling ratio of the flow cell to the membrane.

(In)validity of the constant field and constant currents assumptions in theories of ion transport.

PubMed Central

Syganow, A; von Kitzing, E

1999-01-01

Constant electric fields and constant ion currents are often considered in theories of ion transport. Therefore, it is important to understand the validity of these helpful concepts. The constant field assumption requires that the charge density of permeant ions and flexible polar groups is virtually voltage independent. We present analytic relations that indicate the conditions under which the constant field approximation applies. Barrier models are frequently fitted to experimental current-voltage curves to describe ion transport. These models are based on three fundamental characteristics: a constant electric field, negligible concerted motions of ions inside the channel (an ion can enter only an empty site), and concentration-independent energy profiles. An analysis of those fundamental assumptions of barrier models shows that those approximations require large barriers because the electrostatic interaction is strong and has a long range. In the constant currents assumption, the current of each permeating ion species is considered to be constant throughout the channel; thus ion pairing is explicitly ignored. In inhomogeneous steady-state systems, the association rate constant determines the strength of ion pairing. Among permeable ions, however, the ion association rate constants are not small, according to modern diffusion-limited reaction rate theories. A mathematical formulation of a constant currents condition indicates that ion pairing very likely has an effect but does not dominate ion transport. PMID:9929480

Poloxamer 188 decreases susceptibility of artificial lipid membranes to electroporation.

PubMed Central

Sharma, V; Stebe, K; Murphy, J C; Tung, L

1996-01-01

The effect of a nontoxic, nonionic block co-polymeric surface active agent, poloxamer 188, on electroporation of artificial lipid membranes made of azolectin, was investigated. Two different experimental protocols were used in our study: charge pulse and voltage clamp. For the charge pulse protocol, membranes were pulsed with a 10-micronsecond rectangular voltage waveform, after which membrane voltage decay was observed through an external 1-M omega resistance. For the voltage clamp protocol the membranes were pulsed with a waveform that consisted of an initial 10-microsecond rectangular phase, followed by a negative sloped ramp that decayed to zero in the subsequent 500 microseconds. Several parameters characterizing the electroporation process were measured and compared for the control membranes and membranes treated with 1.0 mM poloxamer 188. For both the charge pulse and voltage clamp experiments, the threshold voltage (amplitude of initial rectangular phase) and latency time (time elapsed between the end of rectangular phase and the onset of membrane electroporation) were measured. Membrane conductance (measured 200 microseconds after the initial rectangular phase) and rise time (tr; the time required for the porated membrane to reach a certain conductance value) were also determined for the voltage clamp experiments, and postelectroporation time constant (PE tau; the time constant for transmembrane voltage decay after onset of electroporation) for the charge pulse experiments. The charge pulse experiments were performed on 23 membranes with 10 control and 13 poloxamer-treated membranes, and voltage pulse experiments on 49 membranes with 26 control and 23 poloxamer-treated membranes. For both charge pulse and voltage clamp experiments, poloxamer 188-treated membranes exhibited a statistically higher threshold voltage (p = 0.1 and p = 0.06, respectively), and longer latency time (p = 0.04 and p = 0.05, respectively). Also, poloxamer 188-treated membranes were found to have a relatively lower conductance (p = 0.001), longer time required for the porated membrane to reach a certain conductance value (p = 0.05), and longer postelectroporation time constant (p = 0.005). Furthermore, addition of poloxamer 188 was found to reduce the membrane capacitance by approximately 4-8% in 5 min. These findings suggest that poloxamer 188 adsorbs into the lipid bilayers, thereby decreasing their susceptibility to electroporation. Images FIGURE 1 PMID:8968593

A mathematical approach for evaluating nickel-hydrogen cells

NASA Technical Reports Server (NTRS)

Leibecki, H. F.

1986-01-01

A mathematical equation is presented which gives a quantitative relationship between time-voltage discharge curves, when a cell's ampere-hour capacity is determined at a constant discharge current. In particular the equation quantifies the initial exponential voltage decay; the rate of voltage decay; the overall voltage shift of the curve and the total capacity of the cell at the given discharge current. The results of 12 nickel-hydrogen boiler plate cells cycled to 80 percent depth-of-discharge (DOD) are discussed in association with these equations.

State of charge modeling of lithium-ion batteries using dual exponential functions

NASA Astrophysics Data System (ADS)

Kuo, Ting-Jung; Lee, Kung-Yen; Huang, Chien-Kang; Chen, Jau-Horng; Chiu, Wei-Li; Huang, Chih-Fang; Wu, Shuen-De

2016-05-01

A mathematical model is developed by fitting the discharging curve of LiFePO4 batteries and used to investigate the relationship between the state of charge and the closed-circuit voltage. The proposed mathematical model consists of dual exponential terms and a constant term which can fit the characteristics of dual equivalent RC circuits closely, representing a LiFePO4 battery. One exponential term presents the stable discharging behavior and the other one presents the unstable discharging behavior and the constant term presents the cut-off voltage.

State trajectories used to observe and control dc-to-dc converters

NASA Technical Reports Server (NTRS)

Burns, W. W., III; Wilson, T. G.

1976-01-01

State-plane analysis techniques are employed to study the voltage stepup energy-storage dc-to-dc converter. Within this framework, an example converter operating under the influence of a constant on-time and a constant frequency controller is examined. Qualitative insight gained through this approach is used to develop a conceptual free-running control law for the voltage stepup converter which can achieve steady-state operation in one on/off cycle of control. Digital computer simulation data are presented to illustrate and verify the theoretical discussions presented.

The voltage control for self-excited induction generator based on STATCOM

NASA Astrophysics Data System (ADS)

Yan, Dandan; Wang, Feifeng; Pan, Juntao; Long, Weijie

2018-05-01

The small independent induction generator can build up voltage under its remanent magnetizing and excitation capacitance, but it is prone to voltage sag and harmonic increment when running with load. Therefore, the controller for constant voltage is designed based on the natural coordinate system to adjust the static synchronous compensator (STATCOM), which provides two-way dynamic reactive power compensation for power generation system to achieve voltage stability and harmonic suppression. The control strategy is verified on Matlab/Sinmulik, and the results show that the STATCOM under the controller can effectively improve the load capacity and reliability of asynchronous generator.

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

NASA Astrophysics Data System (ADS)

Tang, Lan-Feng; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Qian, Hui-Min; Zhou, Dong; Zhang, Rong; Zheng, You-Dou; Huang, Xiao-Ming

2015-08-01

The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed. Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Gene delivery by microfluidic flow-through electroporation based on constant DC and AC field.

PubMed

Geng, Tao; Zhan, Yihong; Lu, Chang

2012-01-01

Electroporation is one of the most widely used physical methods to deliver exogenous nucleic acids into cells with high efficiency and low toxicity. Conventional electroporation systems typically require expensive pulse generators to provide short electrical pulses at high voltage. In this work, we demonstrate a flow-through electroporation method for continuous transfection of cells based on disposable chips, a syringe pump, and a low-cost power supply that provides a constant voltage. We successfully transfect cells using either DC or AC voltage with high flow rates (ranging from 40 µl/min to 20 ml/min) and high efficiency (up to 75%). We also enable the entire cell membrane to be uniformly permeabilized and dramatically improve gene delivery by inducing complex migrations of cells during the flow.

A study of Schwarz converters for nuclear powered spacecraft

NASA Technical Reports Server (NTRS)

Stuart, Thomas A.; Schwarze, Gene E.

1987-01-01

High power space systems which use low dc voltage, high current sources such as thermoelectric generators, will most likely require high voltage conversion for transmission purposes. This study considers the use of the Schwarz resonant converter for use as the basic building block to accomplish this low-to-high voltage conversion for either a dc or an ac spacecraft bus. The Schwarz converter has the important assets of both inherent fault tolerance and resonant operation; parallel operation in modular form is possible. A regulated dc spacecraft bus requires only a single stage converter while a constant frequency ac bus requires a cascaded Schwarz converter configuration. If the power system requires constant output power from the dc generator, then a second converter is required to route unneeded power to a ballast load.

Heliocentric interplanetary low thrust trajectory optimization program, supplement 1, part 2

NASA Technical Reports Server (NTRS)

Mann, F. I.; Horsewood, J. L.

1978-01-01

The improvements made to the HILTOP electric propulsion trajectory computer program are described. A more realistic propulsion system model was implemented in which various thrust subsystem efficiencies and specific impulse are modeled as variable functions of power available to the propulsion system. The number of operating thrusters are staged, and the beam voltage is selected from a set of five (or less) constant voltages, based upon the application of variational calculus. The constant beam voltages may be optimized individually or collectively. The propulsion system logic is activated by a single program input key in such a manner as to preserve the HILTOP logic. An analysis describing these features, a complete description of program input quantities, and sample cases of computer output illustrating the program capabilities are presented.

Validation of MIL-F-9490D - General Specification for Flight Control System for Piloted Military Aircraft. Volume II. YF-17 Lightweight Fighter Validation

DTIC Science & Technology

1977-04-01

Leakage current shall not exceed 10 milliamps when a dielectric stress voltage of 1,200 volts, 60 liz, is applied for 1 minute between insulated...include requirements which eqtial or exceed requirements of this paragraph. However, lower values for dielectric stress voltage and insulation...resistance were specified for solid state elec- tronic assemblies. Northrop’s requirement for dielectric strenirth specifies a test voltage of 300 volts RMS

Considerations for a Standardized Test for Potential-Induced Degradation of Crystalline Silicon PV Modules (Presentation)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, P.

2012-03-01

Over the past decade, there have been observations of module degradation and power loss because of the stress that system voltage bias exerts. This results in part from qualification tests and standards note adequately evaluating for the durability of modules to the long-term effects of high voltage bias that they experience in fielded arrays. This talk deals with factors for consideration, progress, and information still needed for a standardized test for degradation due to system voltage stress.

Improvement of the conductive network of positive electrodes and the performance of Ni-MH battery

NASA Astrophysics Data System (ADS)

Morimoto, Katsuya; Nakayama, Kousuke; Maki, Hideshi; Inoue, Hiroshi; Mizuhata, Minoru

2017-06-01

The pretreatment to modify the valence of cobalt by discharging at 0.2 C rate for 7.5 h before the first initial activation charge process is effective in improving the surface electronic conductivity among fine particles of positive electrode active materials. The discharge curves indicate the same locus within 1800 cycles, and the capacity of the pretreated battery is stable for over 4000 cycles. However, in-situ cell pretreatment with constant current has negative influence on other components. During the constant current pretreatment, the cell voltage rapidly falls to -0.5 V in the first 10 s of in-situ pretreatment. Therefore, we investigate the pretreatment by supplying a constant voltage to the battery instead of a constant current, and find the effective condition to improve the electrochemical performance and not to have any influence on other components of the battery.

High power density dc-to-dc converters for aerospace applications

NASA Technical Reports Server (NTRS)

Divan, Deepakraj M.

1990-01-01

Three dc-to-dc converter topologies aimed at high-power high-frequency applications are introduced. Major system parasitics, namely, the leakage inductance of the transformer and the device output capacitance are efficiently utilized. Of the three circuits, the single-phase and three-phase versions of the dual active bridge topology demonstrate minimal stresses, better utilization of the transformer, bidirectional, and buck-boost modes of operation. All circuits operate at a constant switching frequency, thus simplifying design of the reactive elements. The power transfer characteristics and soft-switching regions on the Vout-Iout plane are identified. Two coaxial transformers with different cross-sections were built for a rating of 50 kVA. Based on the single-phase dual active bridge topology, a 50 kW, 50 kHz converter operating at an input voltage of 200 Vdc and an output voltage of 1600 Vdc was fabricated. Characteristics of current-fed output make the dual active bridge topologies amenable to paralleling and hence extension to megawatt power levels. Projections to a 1 MW system operating from a 500 Vdc input, at an output voltage of 10 kVdc and a switching frequency of 50 kHz, using MOS-controlled thyristors, coaxially wound transformers operating at three times the present current density with cooling, and multilayer ceramic capacitors, suggests an overall power density of 0.075 to 0.08 kg/kW and an overall efficiency of 96 percent.

A correlation between extensional displacement and architecture of ionic polymer transducers

NASA Astrophysics Data System (ADS)

Akle, Barbar J.; Duncan, Andrew; Leo, Donald J.

2008-03-01

Ionic polymer transducers (IPT), sometimes referred to as artificial muscles, are known to generate a large bending strain and a moderate stress at low applied voltages (<5V). Bending actuators have limited engineering applications due to the low forcing capabilities and the need for complicated external devices to convert the bending action into rotating or linear motion desired in most devices. Recently Akle and Leo reported extensional actuation in ionic polymer transducers. In this study, extensional IPTs are characterized as a function of transducer architecture. In this study 2 actuators are built and there extensional displacement response is characterized. The transducers have similar electrodes while the middle membrane in the first is a Nafion / ionic liquid and an aluminum oxide - ionic liquid in the second. The first transducer is characterized for constant current input, voltage step input, and sweep voltage input. The model prediction is in agreement in both shape and magnitude for the constant current experiment. The values of α and β used are within the range of values reported in Akle and Leo. Both experiments and model demonstrate that there is a preferred direction of applying the potential so that the transducer will exhibit large deformations. In step response the model well predicted the negative potential and the early part of the step in the positive potential and failed to predict the displacement after approximately 180s has elapsed. The model well predicted the sweep response, and the observed 1st harmonic in the displacement further confirmed the existence of a quadratic in the charge response. Finally the aluminum oxide based transducer is characterized for a step response and compared to the Nafion based transducer. The second actuator demonstrated electromechanical extensional response faster than that in the Nafion based transducer. The Aluminum oxide based transducer is expected to provide larger forces and hence larger energy density.

Developing Fast Fluorescent Protein Voltage Sensors by Optimizing FRET Interactions

PubMed Central

Sung, Uhna; Sepehri-Rad, Masoud; Piao, Hong Hua; Jin, Lei; Hughes, Thomas; Cohen, Lawrence B.; Baker, Bradley J.

2015-01-01

FRET (Förster Resonance Energy Transfer)-based protein voltage sensors can be useful for monitoring neuronal activity in vivo because the ratio of signals between the donor and acceptor pair reduces common sources of noise such as heart beat artifacts. We improved the performance of FRET based genetically encoded Fluorescent Protein (FP) voltage sensors by optimizing the location of donor and acceptor FPs flanking the voltage sensitive domain of the Ciona intestinalis voltage sensitive phosphatase. First, we created 39 different “Nabi1” constructs by positioning the donor FP, UKG, at 8 different locations downstream of the voltage-sensing domain and the acceptor FP, mKO, at 6 positions upstream. Several of these combinations resulted in large voltage dependent signals and relatively fast kinetics. Nabi1 probes responded with signal size up to 11% ΔF/F for a 100 mV depolarization and fast response time constants both for signal activation (~2 ms) and signal decay (~3 ms). We improved expression in neuronal cells by replacing the mKO and UKG FRET pair with Clover (donor FP) and mRuby2 (acceptor FP) to create Nabi2 probes. Nabi2 probes also had large signals and relatively fast time constants in HEK293 cells. In primary neuronal culture, a Nabi2 probe was able to differentiate individual action potentials at 45 Hz. PMID:26587834

The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

NASA Astrophysics Data System (ADS)

Szmyd, Janusz S.; Komatsu, Yosuke; Brus, Grzegorz; Ghigliazza, Francesco; Kimijima, Shinji; Ściążko, Anna

2014-09-01

This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V) correlation. The current-based fuel control (CBFC) was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

Aging and failure mode of electrochemical double layer capacitors during accelerated constant load tests

NASA Astrophysics Data System (ADS)

Kötz, R.; Ruch, P. W.; Cericola, D.

Electrochemical double layer capacitors of the BCAP0350 type (Maxwell Technologies) were tested under constant load conditions at different voltages and temperatures. The aging of the capacitors was monitored during the test in terms of capacitance, internal resistance and leakage current. Aging was significantly accelerated by elevated temperature or increased voltage. Only for extreme conditions at voltages of 3.5 V or temperatures above 70 °C the capacitors failed due to internal pressure build-up. No other failure events such as open circuit or short circuit were detected. Impedance measurements after the tests showed increased high frequency resistance, an increased distributed resistance and most likely an increase in contact resistance between electrode and current collector together with a loss of capacitance. Capacitors aged at elevated voltages (3.3 V) exhibited a tilting of the low frequency component, which implies an increase in the heterogeneity of the electrode surface. This feature was not observed upon aging at elevated temperatures (70 °C).

Activation of Ih and TTX-sensitive sodium current at subthreshold voltages during CA1 pyramidal neuron firing

PubMed Central

Yamada-Hanff, Jason

2015-01-01

We used dynamic clamp and action potential clamp techniques to explore how currents carried by tetrodotoxin-sensitive sodium channels and HCN channels (Ih) regulate the behavior of CA1 pyramidal neurons at resting and subthreshold voltages. Recording from rat CA1 pyramidal neurons in hippocampal slices, we found that the apparent input resistance and membrane time constant were strongly affected by both conductances, with Ih acting to decrease apparent input resistance and time constant and sodium current acting to increase both. We found that both Ih and sodium current were active during subthreshold summation of artificial excitatory postsynaptic potentials (EPSPs) generated by dynamic clamp, with Ih dominating at less depolarized voltages and sodium current at more depolarized voltages. Subthreshold sodium current—which amplifies EPSPs—was most effectively recruited by rapid voltage changes, while Ih—which blunts EPSPs—was maximal for slow voltage changes. The combined effect is to selectively amplify rapid EPSPs. We did similar experiments in mouse CA1 pyramidal neurons, doing voltage-clamp experiments using experimental records of action potential firing of CA1 neurons previously recorded in awake, behaving animals as command voltages to quantify flow of Ih and sodium current at subthreshold voltages. Subthreshold sodium current was larger and subthreshold Ih was smaller in mouse neurons than in rat neurons. Overall, the results show opposing effects of subthreshold sodium current and Ih in regulating subthreshold behavior of CA1 neurons, with subthreshold sodium current prominent in both rat and mouse CA1 pyramidal neurons and additional regulation by Ih in rat neurons. PMID:26289465

Power conversion apparatus and method

DOEpatents

Su, Gui-Jia [Knoxville, TN

2012-02-07

A power conversion apparatus includes an interfacing circuit that enables a current source inverter to operate from a voltage energy storage device (voltage source), such as a battery, ultracapacitor or fuel cell. The interfacing circuit, also referred to as a voltage-to-current converter, transforms the voltage source into a current source that feeds a DC current to a current source inverter. The voltage-to-current converter also provides means for controlling and maintaining a constant DC bus current that supplies the current source inverter. The voltage-to-current converter also enables the current source inverter to charge the voltage energy storage device, such as during dynamic braking of a hybrid electric vehicle, without the need of reversing the direction of the DC bus current.

A methodology for constraining power in finite element modeling of radiofrequency ablation.

PubMed

Jiang, Yansheng; Possebon, Ricardo; Mulier, Stefaan; Wang, Chong; Chen, Feng; Feng, Yuanbo; Xia, Qian; Liu, Yewei; Yin, Ting; Oyen, Raymond; Ni, Yicheng

2017-07-01

Radiofrequency ablation (RFA) is a minimally invasive thermal therapy for the treatment of cancer, hyperopia, and cardiac tachyarrhythmia. In RFA, the power delivered to the tissue is a key parameter. The objective of this study was to establish a methodology for the finite element modeling of RFA with constant power. Because of changes in the electric conductivity of tissue with temperature, a nonconventional boundary value problem arises in the mathematic modeling of RFA: neither the voltage (Dirichlet condition) nor the current (Neumann condition), but the power, that is, the product of voltage and current was prescribed on part of boundary. We solved the problem using Lagrange multiplier: the product of the voltage and current on the electrode surface is constrained to be equal to the Joule heating. We theoretically proved the equality between the product of the voltage and current on the surface of the electrode and the Joule heating in the domain. We also proved the well-posedness of the problem of solving the Laplace equation for the electric potential under a constant power constraint prescribed on the electrode surface. The Pennes bioheat transfer equation and the Laplace equation for electric potential augmented with the constraint of constant power were solved simultaneously using the Newton-Raphson algorithm. Three problems for validation were solved. Numerical results were compared either with an analytical solution deduced in this study or with results obtained by ANSYS or experiments. This work provides the finite element modeling of constant power RFA with a firm mathematical basis and opens pathway for achieving the optimal RFA power. Copyright © 2016 John Wiley & Sons, Ltd.

Bivariate quadratic method in quantifying the differential capacitance and energy capacity of supercapacitors under high current operation

NASA Astrophysics Data System (ADS)

Goh, Chin-Teng; Cruden, Andrew

2014-11-01

Capacitance and resistance are the fundamental electrical parameters used to evaluate the electrical characteristics of a supercapacitor, namely the dynamic voltage response, energy capacity, state of charge and health condition. In the British Standards EN62391 and EN62576, the constant capacitance method can be further improved with a differential capacitance that more accurately describes the dynamic voltage response of supercapacitors. This paper presents a novel bivariate quadratic based method to model the dynamic voltage response of supercapacitors under high current charge-discharge cycling, and to enable the derivation of the differential capacitance and energy capacity directly from terminal measurements, i.e. voltage and current, rather than from multiple pulsed-current or excitation signal tests across different bias levels. The estimation results the author achieves are in close agreement with experimental measurements, within a relative error of 0.2%, at various high current levels (25-200 A), more accurate than the constant capacitance method (4-7%). The archival value of this paper is the introduction of an improved quantification method for the electrical characteristics of supercapacitors, and the disclosure of the distinct properties of supercapacitors: the nonlinear capacitance-voltage characteristic, capacitance variation between charging and discharging, and distribution of energy capacity across the operating voltage window.

Revisiting the relevance of using a constant voltage step to improve electrochemical performances of Li-rich lamellar oxides

NASA Astrophysics Data System (ADS)

Pradon, A.; Caldes, M. T.; Petit, P.-E.; La Fontaine, C.; Elkaim, E.; Tessier, C.; Ouvrard, G.; Dumont, E.

2018-03-01

A Li-rich lamellar oxide was cycled at high potential and the relevance of using a constant voltage step (CVS) at the end of the charge, needed for industrial application, was investigated by electrochemical performance, X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Electrochemical studies at 4.7 and 4.5 V with and without CVS showed that capacity and voltage fading occurred mostly when cells operated at high potential. After cycling, 3D-type defects involving transition metals trapped in lithium layer were observed by HRTEM into the electrode bulk. These defects are responsible for the voltage fading. XRD microstrain parameter was used to evaluate defects rate in aged materials subjected to a CVS, showing more 3D-type defects when cycled at 4.7 V than at 4.5 V. The time spent at high potential at the end of the charge as well as the value of the upper potential limit, are both relevant parameters to voltage decay. The use of a CVS at the end of the charge needs at the same time, a reduced upper potential window in order to minimize 3D-type defects occurrence. Unfortunately, this approach is still not sufficient to prevent voltage fading.

Operational stability of solution-processed indium-oxide thin-film transistors: Environmental condition and electrical stress

NASA Astrophysics Data System (ADS)

Baang, Sungkeun; Lee, Hyeonju; Zhang, Xue; Park, Jaehoon; Kim, Won-Pyo; Ko, Young-Woong; Piao, Shang Hao; Choi, Hyoung Jin; Kwon, Jin-Hyuk; Bae, Jin-Hyuk

2018-01-01

We investigate the operational stability of bottom-gate/top-contact-structured indium-oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. Based on the thermogravimetric analysis of the In2O3 precursor solution, we utilize a thermal annealing process at 400 °C for 40 min to prepare the In2O3 films. The results of X-ray photoemission spectroscopy and field-emission scanning electron microscopy show that the electron is the majority carrier in the In2O3 semiconductor film prepared by a spin-coating method and that the film has a polycrystalline morphology with grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. When constant drain and gate voltages are applied, these TFTs in atmospheric air exhibit a more acute decay in the drain currents with time compared to that observed under vacuum. In the positive gate-bias stress experiments, a decrease in the field-effect mobility and a positive shift in the threshold voltage are invariably observed both in atmospheric air and under vacuum, but such characteristic variations are also found to be more pronounced for the atmospheric-air case. These results are explained in terms of the electron-trapping phenomenon at the grain boundaries in the In2O3 semiconductor, as well as the electrostatic interactions between electrons and polar water molecules.

Patient size and x-ray technique factors in head computed tomography examinations. II. Image quality.

PubMed

Huda, Walter; Lieberman, Kristin A; Chang, Jack; Roskopf, Marsha L

2004-03-01

We investigated how patient head characteristics, as well as the choice of x-ray technique factors, affect lesion contrast and noise values in computed tomography (CT) images. Head sizes and mean Hounsfield unit (HU) values were obtained from head CT images for five classes of patients ranging from the newborn to adults. X-ray spectra with tube voltages ranging from 80 to 140 kV were used to compute the average photon energy, and energy fluence, transmitted through the heads of patients of varying size. Image contrast, and the corresponding contrast to noise ratios (CNRs), were determined for lesions of fat, muscle, and iodine relative to a uniform water background. Maintaining a constant image CNR for each lesion, the patient energy imparted was also computed to identify the x-ray tube voltage that minimized the radiation dose. For adults, increasing the tube voltage from 80 to 140 kV changed the iodine HU from 2.62 x 10(5) to 1.27 x 10(5), the fat HU from -138 to -108, and the muscle HU from 37.1 to 33.0. Increasing the x-ray tube voltage from 80 to 140 kV increased the percentage energy fluence transmission by up to a factor of 2. For a fixed x-ray tube voltage, the percentage transmitted energy fluence in adults was more than a factor of 4 lower than for newborns. For adults, increasing the x-ray tube voltage from 80 to 140 kV improved the CNR for muscle lesions by 130%, for fat lesions by a factor of 2, and for iodine lesions by 25%. As the size of the patient increased from newborn to adults, lesion CNR was reduced by about a factor of 2. The mAs value can be reduced by 80% when scanning newborns while maintaining the same lesion CNR as for adults. Maintaining the CNR of an iodine lesion at a constant level, use of 140 kV increases the energy imparted to an adult patient by nearly a factor of 3.5 in comparison to 80 kV. For fat and muscle lesions, raising the x-ray tube voltage from 80 to 140 kV at a constant CNR increased the patient dose by 37% and 7%, respectively. Our two key findings are that for head CT examinations performed at a constant CNR, the mAs can be substantially reduced when scanning infants, and that use of the lowest x-ray tube voltage will generally reduce patient doses.

Apparatus and method for electrical insulation in plasma discharge systems

DOEpatents

Rhodes, Mark A [Redwood City, CA; Fochs, Scott N [Livermore, CA

2003-08-12

An apparatus and method to contain plasma at optimal fill capacity of a metallic container is disclosed. The invention includes the utilization of anodized layers forming the internal surfaces of the container volume. Bias resistors are calibrated to provide constant current at variable voltage conditions. By choosing the appropriate values of the bias resistors, the voltages of the metallic container relative to the voltage of an anode are adjusted to achieve optimal plasma fill while minimizing the chance of reaching the breakdown voltage of the anodized layer.

Automatic Control Of Length Of Welding Arc

NASA Technical Reports Server (NTRS)

Iceland, William F.

1991-01-01

Nonlinear relationships among current, voltage, and length stored in electronic memory. Conceptual microprocessor-based control subsystem maintains constant length of welding arc in gas/tungsten arc-welding system, even when welding current varied. Uses feedback of current and voltage from welding arc. Directs motor to set position of torch according to previously measured relationships among current, voltage, and length of arc. Signal paths marked "calibration" or "welding" used during those processes only. Other signal paths used during both processes. Control subsystem added to existing manual or automatic welding system equipped with automatic voltage control.

Efficient Ionization Investigation for Flow Control and Energy Extraction

NASA Technical Reports Server (NTRS)

Schneider, Steven J.; Kamhawi, Hani; Blankson, Isaiah M.

2009-01-01

Nonequilibrium ionization of air by nonthermal means is explored for hypersonic vehicle applications. The method selected for evaluation generates a weakly ionized plasma using pulsed nanosecond, high-voltage discharges sustained by a lower dc voltage. These discharges promise to provide a means of energizing and sustaining electrons in the air while maintaining a nearly constant ion/neutral molecule temperature. This paper explores the use of short approx.5 nsec, high-voltage approx.12 to 22 kV, repetitive (40 to 100 kHz) discharges in generating a weakly ionized gas sustained by a 1 kV dc voltage in dry air at pressures from 10 to 80 torr. Demonstrated lifetimes of the sustainer discharge current approx.10 to 25 msec are over three orders of magnitude longer than the 5 nsec pulse that generates the electrons. This life is adequate for many high speed flows, enabling the possibility of exploiting weakly ionized plasma phenomena in flow-fields such as those in hypersonic inlets, combustors, and nozzles. Results to date are obtained in a volume of plasma between electrodes in a bell jar. The buildup and decay of the visible emission from the pulser excited air is photographed on an ICCD camera with nanosecond resolution and the time constants for visible emission decay are observed to be between 10 to 15 nsec decreasing as pressure increases. The application of the sustainer voltage does not change the visible emission decay time constant. Energy consumption as indicated by power output from the power supplies is 194 to 669 W depending on pulse repetition rate.

Synaptic shot noise and conductance fluctuations affect the membrane voltage with equal significance.

PubMed

Richardson, Magnus J E; Gerstner, Wulfram

2005-04-01

The subthreshold membrane voltage of a neuron in active cortical tissue is a fluctuating quantity with a distribution that reflects the firing statistics of the presynaptic population. It was recently found that conductance-based synaptic drive can lead to distributions with a significant skew. Here it is demonstrated that the underlying shot noise caused by Poissonian spike arrival also skews the membrane distribution, but in the opposite sense. Using a perturbative method, we analyze the effects of shot noise on the distribution of synaptic conductances and calculate the consequent voltage distribution. To first order in the perturbation theory, the voltage distribution is a gaussian modulated by a prefactor that captures the skew. The gaussian component is identical to distributions derived using current-based models with an effective membrane time constant. The well-known effective-time-constant approximation can therefore be identified as the leading-order solution to the full conductance-based model. The higher-order modulatory prefactor containing the skew comprises terms due to both shot noise and conductance fluctuations. The diffusion approximation misses these shot-noise effects implying that analytical approaches such as the Fokker-Planck equation or simulation with filtered white noise cannot be used to improve on the gaussian approximation. It is further demonstrated that quantities used for fitting theory to experiment, such as the voltage mean and variance, are robust against these non-Gaussian effects. The effective-time-constant approximation is therefore relevant to experiment and provides a simple analytic base on which other pertinent biological details may be added.

High-Temperature Slow Crack Growth of Silicon Carbide Determined by Constant-Stress-Rate and Constant-Stress Testing

NASA Technical Reports Server (NTRS)

Choi, Sung H.; Salem, J. A.; Nemeth, N. N.

1998-01-01

High-temperature slow-crack-growth behaviour of hot-pressed silicon carbide was determined using both constant-stress-rate ("dynamic fatigue") and constant-stress ("static fatigue") testing in flexure at 1300 C in air. Slow crack growth was found to be a governing mechanism associated with failure of the material. Four estimation methods such as the individual data, the Weibull median, the arithmetic mean and the median deviation methods were used to determine the slow crack growth parameters. The four estimation methods were in good agreement for the constant-stress-rate testing with a small variation in the slow-crack-growth parameter, n, ranging from 28 to 36. By contrast, the variation in n between the four estimation methods was significant in the constant-stress testing with a somewhat wide range of n= 16 to 32.

Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul, William; Lutz, Christopher P.; Heinrich, Andreas J.

2016-07-15

We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5–35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.

VOLTAGE REGULATOR

DOEpatents

Von Eschen, R.L.; Scheele, P.F.

1962-04-24

A transistorized voltage regulator which provides very close voitage regulation up to about 180 deg F is described. A diode in the positive line provides a constant voltage drop from the input to a regulating transistor emitter. An amplifier is coupled to the positive line through a resistor and is connected between a difference circuit and the regulating transistor base which is negative due to the difference in voltage drop across thc diode and the resistor so that a change in the regulator output causes the amplifier to increase or decrease the base voltage and current and incrcase or decrease the transistor impedance to return the regulator output to normal. (AEC)

Manual. According to the Calculation of Wires and Cables,

DTIC Science & Technology

1980-04-23

Tpezxaaaro TON. As, C Kay: (1). Designation. t2). Designation. (3). Current (permanent. Voltage constant. (4). Currant ivariable/ alternating . Voltage is the...variable/ alternating , general designatior. (5). Current variable/ alternating three-phase 5C Hz. (6). Ez. (7). Zero line (neutral). It is allcwed/assumed...diagrams of powsr supply iz is allowed/assumed high-voltage switch to dapict, as it is shown. (10). iinuings by relay, contactor and magnetic starter. It

Lumped transmission line avalanche pulser

DOEpatents

Booth, R.

1995-07-18

A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse. 8 figs.

Lumped transmission line avalanche pulser

DOEpatents

Booth, Rex

1995-01-01

A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse.

Development of a novel configuration for a MEMS transducer for low bias and high resolution imaging applications

NASA Astrophysics Data System (ADS)

Emadi, Tahereh Arezoo; Buchanan, Douglas A.

2014-03-01

A robust capacitive micromachined ultrasonic transducer has been developed. In this novel configuration, a stack of two deflectable membranes are suspended over a fixed bottom electrode. Similar to conventional capacitive ultrasonic transducers, a generated electrostatic force between the electrodes causes the membranes to deflect and vibrate. However, in this new configuration the transducer effective cavity height is reduced due to the deflection of two membranes. Therefore, the transducer spring constant is more susceptible to bias voltage, which in return reduces the required bias voltage. The transducers have been produced employing a MEMS sacrificial technique where two different membrane anchoring (curved- and flat- anchors) structures, with similar membrane radii were fabricated. Highly doped polysilicon was used as the membrane material. The resonant frequencies of the two transducers have been investigated. It was found that the transducers with curved membrane anchors exhibits a larger resonant frequency shift compared to the transducers with flat membranes for a given bias voltage. Comparison has been made between the spring constant of the flat membrane transducer and that of a conventional single membrane transducer. It is shown that the multiple moving membrane transducer exhibits a larger reduction in the spring constant compared to the conventional transducer, when driven with the same bias voltage. This results in a transducer with a higher power generation capability and sensitivity.

Stress-dependent voltage offsets from polymer insulators used in rock mechanics and material testing

NASA Astrophysics Data System (ADS)

Carlson, G. G.; Dahlgren, R.; Vanderbilt, V. C.; Johnston, M. J.; Dunson, C.; Gray, A.; Freund, F.

2013-12-01

Dielectric insulators are used in a variety of laboratory settings when performing experiments in rock mechanics, petrology, and electromagnetic studies of rocks in the fields of geophysics, material science, and civil engineering. These components may be used to electrically isolate geological samples from the experimental equipment, to perform a mechanical compliance function between brittle samples and the loading equipment, to match ultrasonic transducers, or perform other functions. In many experimental configurations the insulators bear the full brunt of force applied to the sample but do not need to withstand high voltages, therefore the insulators are often thin sheets of mechanically tough polymers. From an instrument perspective, transduction from various types of mechanical perturbation has been qualitatively compared for a number of polymers [1, 2] and these error sources are readily apparent during high-impedance measurements if not mitigated. However even when following best practices, a force-dependent voltage signal still remains and its behavior is explored in this presentation. In this experiment two thin sheets (0.25 mm) of high-density polyethylene (HDPE) were set up in a stack, held alternately between three aluminum bars; this stack was placed on the platen of a 60T capacity hydraulic testing machine. The surface area, A, over which the force is applied to the PE sheets in this sandwich is roughly 40 square cm, each sheet forming a parallel-plate capacitor having roughly 320 pF [3], assuming the relative dielectric permittivity of PE is ~2.3. The outer two aluminum bars were connected to the LO input of the electrometer and the central aluminum bar was connected to the HI input of a Keithley model 617 electrometer. Once the stack is mechanically well-seated with no air gaps, the voltage offset is observed to be a linear function of the baseline voltage for a given change in applied force. For a periodically applied force of 66.7 kN the voltage offsets were measured as a function of initial voltage, and these data were fit with a linear function that was constrained to pass through the origin. The best fit solution had a correlation coefficient of R = 0.85 and a slope of approximately -0.0228 volts/volt. The voltage offset when normalized is demonstrated to be constant -2.28 % for both positive and negative polarities over nearly 3 orders of baseline voltage magnitude. From this, the voltage-force coefficient is derived to be -0.34 ppm/N. This correlates well to a first-order parallel plate capacitor model that assumes constant area, and small deformation such that the polymer may be mechanically modeled by a spring that obeys Hooke's law. This simple model predicts that the coefficient of proportionality is a function of Young's modulus E = 0.8 GPa and surface area of the insulator, theoretically -1/EA = -0.31 ppm/N. The outcome of this work is an improved insulator made from ultra-high molecular weight (UHMW) polyethylene and other approaches toward the minimization of and compensation for these experimental artifacts. References: [1] Keithley Instruments, Low level measurements handbook, 'Choosing the best insulator,' 2-11 (2004). [2] Ibid., 2-26. [3] A. Skumiel, 'How to transform mechanical work into electrical energy using a capacitor,' European Journal of Physics 32, 625-630 (2011).

Design of DC-contact RF MEMS switch with temperature stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Junfeng; Nanjing Electronic Devices Institute, Nanjing, 210016; Li, Zhiqun, E-mail: zhiqunli@seu.edu.cn

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C formore » 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.« less

Pulsed plasma solid propellant microthruster for the synchronous meteorological satellite. Task 4: Engineering model fabrication and test report

NASA Technical Reports Server (NTRS)

Guman, W. J. (Editor)

1972-01-01

Two flight prototype solid propellant pulsed plasma microthruster propulsion systems for the SMS satellite were fabricated, assembled and tested. The propulsion system is a completely self contained system requiring only three electrical inputs to operate: a 29.4 volt power source, a 28 volt enable signal and a 50 millsec long command fire signal that can be applied at any rate from 50 ppm to 110 ppm. The thrust level can be varied over a range 2.2 to 1 at constant impulse bit amplitude. By controlling the duration of the 28 volt enable either steady state thrust or a series of discrete impulse bits can be generated. A new technique of capacitor charging was implemented to reduce high voltage stress on energy storage capacitors.

COTS Li-Ion Cells in High Voltage Batteries

NASA Technical Reports Server (NTRS)

Davies, Francis; Darcy, Eric; Jeevarajan, Judy; Cowles, Phil

2003-01-01

Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.

Genetically-encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics

PubMed Central

Baker, Bradley J.; Jin, Lei; Han, Zhou; Cohen, Lawrence B.; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

2012-01-01

A substantial increase in the speed of the optical response of genetically-encoded Fluorescent Protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1–S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tauoff <5 msec). However, the signal was small (ΔF/F= 0.6%/200 mV). FP voltage sensors using the D. rerio voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2 msec of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. PMID:22634212

The effect of treatment strategy on stone comminution efficiency in shock wave lithotripsy.

PubMed

Zhou, Yufeng; Cocks, Franklin H; Preminger, Glenn M; Zhong, Pei

2004-07-01

The comminution of kidney stones in shock wave lithotripsy (SWL) is a dose dependent process caused primarily by the combination of 2 fundamental mechanisms, namely stress waves and cavitation. The effect of treatment strategy with emphasis on enhancing the effect of stress waves or cavitation on stone comminution in SWL was investigated. Because vascular injury in SWL is also dose dependent, optimization of the treatment strategy may produce improved stone comminution with decreased tissue injury in SWL. Using an in vitro experiment system that mimics stone fragmentation in the renal pelvis spherical BegoStone (Bego USA, Smithfield, Rhode Island) phantoms (diameter 10 mm) were exposed to 1,500 shocks at a pulse repetition rate of 1 Hz in an unmodified HM-3 lithotripter (Dornier Medical Systems, Kennesaw, Georgia). The 3 treatment strategies used were increasing output voltage from 18 to 20 and then to 22 kV every 500 shocks with emphasis on enhancing the effect of cavitation on medium fragments (2 to 4 mm) at the final treatment stage, decreasing output voltage from 22 to 20 and then to 18 kV every 500 shocks with emphasis on enhancing the effect of stress waves on large fragments (greater than 4 mm) at the initial treatment stage and maintaining a constant output voltage at 20 kV, as typically used in SWL procedures. Following shock wave exposure the size distribution of fragments was determined by the sequential sieving method. In addition, pressure waveforms at lithotripter focus (F2) produced at different output settings were measured using a fiber optic probe hydrophone. The rate of stone comminution in SWL varied significantly in a dose dependent manner depending on the treatment strategies used. Specifically the comminution efficiencies produced by the 3 strategies after the initial 500 shocks were 30.7%, 59% and 41.9%, respectively. After 1,000 shocks the corresponding comminution efficiencies became similar (60.2%, 68.1% and 66.4%, respectively) with no statistically significant differences (p = 0.08). After 1,500 shocks the final comminution efficiency produced by the first strategy was 88.7%, which was better than the corresponding values of 81.2% and 83.5%, respectively, for the other 2 strategies. The difference between the final comminution efficiency of the first and second strategies was statistically significant (p = 0.005). Progressive increase in lithotripter output voltage can produce the best overall stone comminution in vitro.

Design techniques for a stable operation of cryogenic field-programmable gate arrays.

PubMed

Homulle, Harald; Visser, Stefan; Patra, Bishnu; Charbon, Edoardo

2018-01-01

In this paper, we show how a deep-submicron field-programmable gate array (FPGA) can be operated more stably at extremely low temperatures through special firmware design techniques. Stability at low temperatures is limited through long power supply wires and reduced performance of various printed circuit board components commonly employed at room temperature. Extensive characterization of these components shows that the majority of decoupling capacitor types and voltage regulators are not well behaved at cryogenic temperatures, asking for an ad hoc solution to stabilize the FPGA supply voltage, especially for sensitive applications. Therefore, we have designed a firmware that enforces a constant power consumption, so as to stabilize the supply voltage in the interior of the FPGA. The FPGA is powered with a supply at several meters distance, causing significant resistive voltage drop and thus fluctuations on the local supply voltage. To achieve the stabilization, the variation in digital logic speed, which directly corresponds to changes in supply voltage, is constantly measured and corrected for through a tunable oscillator farm, implemented on the FPGA. The impact of the stabilization technique is demonstrated together with a reconfigurable analog-to-digital converter (ADC), completely implemented in the FPGA fabric and operating at 15 K. The ADC performance can be improved by at most 1.5 bits (effective number of bits) thanks to the more stable supply voltage. The method is versatile and robust, enabling seamless porting to other FPGA families and configurations.

Design techniques for a stable operation of cryogenic field-programmable gate arrays

NASA Astrophysics Data System (ADS)

Homulle, Harald; Visser, Stefan; Patra, Bishnu; Charbon, Edoardo

2018-01-01

In this paper, we show how a deep-submicron field-programmable gate array (FPGA) can be operated more stably at extremely low temperatures through special firmware design techniques. Stability at low temperatures is limited through long power supply wires and reduced performance of various printed circuit board components commonly employed at room temperature. Extensive characterization of these components shows that the majority of decoupling capacitor types and voltage regulators are not well behaved at cryogenic temperatures, asking for an ad hoc solution to stabilize the FPGA supply voltage, especially for sensitive applications. Therefore, we have designed a firmware that enforces a constant power consumption, so as to stabilize the supply voltage in the interior of the FPGA. The FPGA is powered with a supply at several meters distance, causing significant resistive voltage drop and thus fluctuations on the local supply voltage. To achieve the stabilization, the variation in digital logic speed, which directly corresponds to changes in supply voltage, is constantly measured and corrected for through a tunable oscillator farm, implemented on the FPGA. The impact of the stabilization technique is demonstrated together with a reconfigurable analog-to-digital converter (ADC), completely implemented in the FPGA fabric and operating at 15 K. The ADC performance can be improved by at most 1.5 bits (effective number of bits) thanks to the more stable supply voltage. The method is versatile and robust, enabling seamless porting to other FPGA families and configurations.

Voltage Support Study of Smart PV Inverters on a High-Photovoltaic Penetration Utility Distribution Feeder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Fei; Pratt, Annabelle; Bialek, Tom

2016-11-21

This paper reports on tools and methodologies developed to study the impact of adding rooftop photovoltaic (PV) systems, with and without the ability to provide voltage support, on the voltage profile of distribution feeders. Simulation results are provided from a study of a specific utility feeder. The simulation model of the utility distribution feeder was built in OpenDSS and verified by comparing the simulated voltages to field measurements. First, we set all PV systems to operate at unity power factor and analyzed the impact on feeder voltages. Then we conducted multiple simulations with voltage support activated for all the smartmore » PV inverters. These included different constant power factor settings and volt/VAR controls.« less

Voltage controlled spintronic devices for logic applications

DOEpatents

You, Chun-Yeol; Bader, Samuel D.

2001-01-01

A reprogrammable logic gate comprising first and second voltage-controlled rotation transistors. Each transistor comprises three ferromagnetic layers with a spacer and insulating layer between the first and second ferromagnetic layers and an additional insulating layer between the second and third ferromagnetic layers. The third ferromagnetic layer of each transistor is connected to each other, and a constant external voltage source is applied to the second ferromagnetic layer of the first transistor. As input voltages are applied to the first ferromagnetic layer of each transistor, the relative directions of magnetization of the ferromagnetic layers and the magnitude of the external voltage determines the output voltage of the gate. By altering these parameters, the logic gate is capable of behaving as AND, OR, NAND, or NOR gates.

Role of endothelium sensitivity to shear stress in noradrenaline-induced constriction of feline femoral arterial bed under constant flow and constant pressure perfusions.

PubMed

Kartamyshev, Sergey P; Balashov, Sergey A; Melkumyants, Arthur M

2007-01-01

The effect of shear stress at the endothelium in the attenuation of the noradrenaline-induced constriction of the femoral vascular bed perfused at a constant blood flow was investigated in 16 anesthetized cats. It is known that the adrenergic vasoconstriction of the femoral vascular bed is considerably greater at a constant pressure perfusion than at a constant blood flow. This difference may depend on the ability of the endothelium to relax smooth muscle in response to an increase in wall shear stress. Since the shear stress is directly related to the blood flow and inversely related to the third power of vessel diameter, vasoconstriction at a constant blood flow increases the wall shear stress that is the stimulus for smooth muscle relaxation opposing constriction. On the other hand, at a constant perfusion pressure, vasoconstriction is accompanied by a decrease in flow rate, which prevents a wall shear stress increase. To reveal the effect of endothelial sensitivity to shear stress, we compared noradrenaline-induced changes in total and proximal arterial resistances during perfusion of the hind limb at a constant blood flow and at a constant pressure in vessels with intact and injured endothelium. We found that in the endothelium-intact bed the same concentration of noradrenaline at a constant flow caused an increase in overall vascular peripheral resistance that was half as large as at a constant perfusion pressure. This difference is mainly confined to the proximal arterial vessels (arteries and large arterioles) whose resistance at a constant flow increased only 0.19 +/- 0.03 times compared to that at a constant pressure. The removal of the endothelium only slightly increased constrictor responses at the perfusion under a constant pressure (noradrenaline-induced increases of both overall and proximal arterial resistance augmented by 12%), while the responses of the proximal vessels at a constant flow became 4.7 +/- 0.4 times greater than in the endothelium-intact bed. A selective blockage of endothelium sensitivity to shear stress using a glutaraldehyde dimer augmented the constrictor responses of the proximal vessels at a constant flow 4.6-fold (+/-0.3), but had no significant effect on the responses at a constant pressure. These results are consistent with the conclusion that the difference in constrictor responses at constant flow and pressure perfusions depends mainly on the smooth muscle relaxation caused by increased wall shear stress. Copyright (c) 2007 S. Karger AG, Basel.

Grid-connected wind and photovoltaic system

NASA Astrophysics Data System (ADS)

Devabakthuni, Sindhuja

The objective of this thesis is to design a grid connected wind and photovoltaic system. A new model of converter control was designed which maintains the voltage of the bus to grid as constant when combined system of solar and wind is connected to AC bus. The model is designed to track maximum power at each point irrespective of changes in irradiance, temperature and wind speed which affects the power supplied to grid. Solar power from the sun is not constant as it is affected by changes in irradiances and temperature. Even the wind power is affected by wind speed. A MPPT controller was designed for both systems. A boost converter is designed which uses the pulses from MPPT controller to boost the output. Wind system consists of wind turbine block from the MATLAB with a pitch angle controller to maintain optimum pitch angle. The output from wind turbine is connected to a permanent magnet synchronous generator. The unregulated DC output from the photovoltaic system is directly given to boost converter. The AC output from the wind system is given to an uncontrolled rectifier to get a unregulated DC output. The unregulated DC output goes to the boost converter. A voltage source inverter was designed which converts the rectified DC output from the boost converter to AC power. The inverter is designed to maintain constant AC bus voltage irrespective of the disturbances in the power supply. Photovoltaic and wind systems are individually designed for 5KW each in MATLAB-Simulink environment. In this thesis, the models were subjected to changes in irradiance, temperature and wind speed and the results were interpreted. The model was successful in tracking maximum at every instant and the AC bus voltage was maintained constant throughout the simulation.

β1 subunit stabilises sodium channel Nav1.7 against mechanical stress.

PubMed

Körner, Jannis; Meents, Jannis; Machtens, Jan-Philipp; Lampert, Angelika

2018-06-01

The voltage-gated sodium channel Nav1.7 is a key player in neuronal excitability and pain signalling. In addition to voltage sensing, the channel is also modulated by mechanical stress. Using whole-cell patch-clamp experiments, we discovered that the sodium channel subunit β1 is able to prevent the impact of mechanical stress on Nav1.7. An intramolecular disulfide bond of β1 was identified to be essential for stabilisation of inactivation, but not activation, against mechanical stress using molecular dynamics simulations, homology modelling and site-directed mutagenesis. Our results highlight the role of segment 6 of domain IV in fast inactivation. We present a candidate mechanism for sodium channel stabilisation against mechanical stress, ensuring reliable channel functionality in living systems. Voltage-gated sodium channels are key players in neuronal excitability and pain signalling. Precise gating of these channels is crucial as even small functional alterations can lead to pathological phenotypes such as pain or heart failure. Mechanical stress has been shown to affect sodium channel activation and inactivation. This suggests that stabilising components are necessary to ensure precise channel gating in living organisms. Here, we show that mechanical shear stress affects voltage dependence of activation and fast inactivation of the Nav1.7 channel. Co-expression of the β1 subunit, however, protects both gating modes of Nav1.7 against mechanical shear stress. Using molecular dynamics simulation, homology modelling and site-directed mutagenesis, we identify an intramolecular disulfide bond of β1 (Cys21-Cys43) which is partially involved in this process: the β1-C43A mutant prevents mechanical modulation of voltage dependence of activation, but not of fast inactivation. Our data emphasise the unique role of segment 6 of domain IV for sodium channel fast inactivation and confirm previous reports that the intracellular process of fast inactivation can be modified by interfering with the extracellular end of segment 6 of domain IV. Thus, our data suggest that physiological gating of Nav1.7 may be protected against mechanical stress in a living organism by assembly with the β1 subunit. © 2018 The Authors. The Journal of Physiology © 2018 The Physiological Society.

Relationship of compressive stress-strain response of engineering materials obtained at constant engineering and true strain rates

DOE PAGES

Song, Bo; Sanborn, Brett

2018-05-07

In this paper, a Johnson–Cook model was used as an example to analyze the relationship of compressive stress-strain response of engineering materials experimentally obtained at constant engineering and true strain rates. There was a minimal deviation between the stress-strain curves obtained at the same constant engineering and true strain rates. The stress-strain curves obtained at either constant engineering or true strain rates could be converted from one to the other, which both represented the intrinsic material response. There is no need to specify the testing requirement of constant engineering or true strain rates for material property characterization, provided that eithermore » constant engineering or constant true strain rate is attained during the experiment.« less

Relationship of compressive stress-strain response of engineering materials obtained at constant engineering and true strain rates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Bo; Sanborn, Brett

In this paper, a Johnson–Cook model was used as an example to analyze the relationship of compressive stress-strain response of engineering materials experimentally obtained at constant engineering and true strain rates. There was a minimal deviation between the stress-strain curves obtained at the same constant engineering and true strain rates. The stress-strain curves obtained at either constant engineering or true strain rates could be converted from one to the other, which both represented the intrinsic material response. There is no need to specify the testing requirement of constant engineering or true strain rates for material property characterization, provided that eithermore » constant engineering or constant true strain rate is attained during the experiment.« less

Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures

NASA Astrophysics Data System (ADS)

Muñoz-Gorriz, J.; Monaghan, S.; Cherkaoui, K.; Suñé, J.; Hurley, P. K.; Miranda, E.

2017-12-01

The angular wavelet analysis is applied for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt capacitors with areas ranging from 104 to 105 μm2. The breakdown spot lateral sizes are in the range from 1 to 3 μm, and they appear distributed on the top metal electrode as a point pattern. The spots are generated by ramped and constant voltage stresses and are the consequence of microexplosions caused by the formation of shorts spanning the dielectric film. This kind of pattern was analyzed in the past using the conventional spatial analysis tools such as intensity plots, distance histograms, pair correlation function, and nearest neighbours. Here, we show that the wavelet analysis offers an alternative and complementary method for testing whether or not the failure site distribution departs from a complete spatial randomness process in the angular domain. The effect of using different wavelet functions, such as the Haar, Sine, French top hat, Mexican hat, and Morlet, as well as the roles played by the process intensity, the location of the voltage probe, and the aspect ratio of the device, are all discussed.

Damage free Ar ion plasma surface treatment on In{sub 0.53}Ga{sub 0.47}As-on-silicon metal-oxide-semiconductor device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koh, Donghyi; Shin, Seung Heon; Ahn, Jaehyun

2015-11-02

In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In{sub 0.53}Ga{sub 0.47}As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In{sub 0.53}Ga{sub 0.47}As. The XPS spectra of Ar treated In{sub 0.53}Ga{sub 0.47}As show a decrease in the AsO{sub x} and GaO{sub x} signal intensities, and the MOSCAPs show higher accumulation capacitance (C{sub acc}), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (D{sub it}),more » which thereby led to a reduction in the threshold voltage (V{sub th}) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.« less

Performance of a dual anode nickel-hydrogen cell

NASA Technical Reports Server (NTRS)

Gahn, Randall F.

1991-01-01

An experimental study was conducted to characterize the voltage performance of a nickel hydrogen cell containing a hydrogen electrode on both sides of the nickel electrode. The dual anode cell was compared with a convenient single anode cell using the same nickel electrode. Higher discharge voltages and lower charge voltages were obtained with the dual anode cell during constant current discharges to 10C, pulse discharges to 8C, and polarization measurements at 50 percent of charge.

Measurement of the Boltzmann constant by Johnson noise thermometry using a superconducting integrated circuit

NASA Astrophysics Data System (ADS)

Urano, C.; Yamazawa, K.; Kaneko, N.-H.

2017-12-01

We report on our measurement of the Boltzmann constant by Johnson noise thermometry (JNT) using an integrated quantum voltage noise source (IQVNS) that is fully implemented with superconducting integrated circuit technology. The IQVNS generates calculable pseudo white noise voltages to calibrate the JNT system. The thermal noise of a sensing resistor placed at the temperature of the triple point of water was measured precisely by the IQVNS-based JNT. We accumulated data of more than 429 200 s in total (over 6 d) and used the Akaike information criterion to estimate the fitting frequency range for the quadratic model to calculate the Boltzmann constant. Upon detailed evaluation of the uncertainty components, the experimentally obtained Boltzmann constant was k=1.380 6436× {{10}-23} J K-1 with a relative combined uncertainty of 10.22× {{10}-6} . The value of k is relatively -3.56× {{10}-6} lower than the CODATA 2014 value (Mohr et al 2016 Rev. Mod. Phys. 88 035009).

System and method for charging electrochemical cells in series

DOEpatents

DeLuca, William H.; Hornstra, Jr, Fred; Gelb, George H.; Berman, Baruch; Moede, Larry W.

1980-01-01

A battery charging system capable of equalizing the charge of each individual cell at a selected full charge voltage includes means for regulating charger current to first increase current at a constant rate until a bulk charging level is achieved or until any cell reaches a safe reference voltage. A system controller then begins to decrease the charging rate as long as any cell exceeds the reference voltage until an equalization current level is reached. At this point, the system controller activates a plurality of shunt modules to permit shunting of current around any cell having a voltage exceeding the reference voltage. Leads extending between the battery of cells and shunt modules are time shared to permit alternate shunting of current and voltage monitoring without the voltage drop caused by the shunt current. After each cell has at one time exceeded the reference voltage, the charging current is terminated.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Radiation Hardened Structured ASIC Platform with Compensation of Delay for Temperature and Voltage Variations for Multiple Redundant Temporal Voting Latch Technology

NASA Technical Reports Server (NTRS)

Ardalan, Sasan (Inventor)

2018-01-01

The invention relates to devices and methods of maintaining the current starved delay at a constant value across variations in voltage and temperature to increase the speed of operation of the sequential logic in the radiation hardened ASIC design.

Measured radial dependence of the peak sheath voltages present in very high frequency capacitive discharges

DOE PAGES

Barnat, E. V.; Miller, P. A.; Hebner, G. A.; ...

2007-05-16

In this paper, the radial distribution of the measured voltage drop across a sheath formed between a 300mm electrode and an argon plasma discharge is shown to depend on the excitation radio frequency, under constant power and pressure conditions. At a lower frequency of 13.56MHz, the voltage drop across the sheath is uniform across the 300mm electrode, while at higher frequencies of 60 and 162MHz the voltage drop becomes radially nonuniform. Finally, the magnitude and spatial extent of the nonuniformity become greater with increasing frequency.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

NASA Astrophysics Data System (ADS)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

Preparation of ceramic coating on Ti substrate by Plasma electrolytic oxidation in different electrolytes and evaluation of its corrosion resistance

NASA Astrophysics Data System (ADS)

Shokouhfar, M.; Dehghanian, C.; Baradaran, A.

2011-01-01

Ceramic oxide coatings (titania) were produced on Ti by micro-arc oxidation in different aluminate and carbonate based electrolytes. This process was conducted under constant pulsed DC voltage condition. The effect of KOH and NaF in aluminate based solution was also studied. The surface morphology, growth and phase composition of coatings were investigated using scanning electron microscope and X-ray diffraction. Corrosion behavior of the coatings was also examined by potentiodynamic polarization and electrochemical impedance spectroscopy. It was found that the sparking initiation voltage (spark voltage) had a significant effect on the form and properties of coatings. Coatings obtained from potassium aluminate based solution had a lower spark voltage, higher surface homogeneity and a better corrosion resistance than the carbonate based solution. Addition of NaF instead of KOH had improper effects on the homogeneity and adhesion of coatings which in turn caused a poor corrosion protection behavior of the oxide layer. AC impedance curves showed two time constants which is an indication of the coatings with an outer porous layer and an inner compact layer.

Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications

NASA Astrophysics Data System (ADS)

Chung, Wen-Yaw; Yang, Chung-Huang; Peng, Kang-Chu; Yeh, M. H.

2003-04-01

This paper presents a modular-based low-voltage analog-front-end processor design in a 0.5mm double-poly double-metal CMOS technology for Ion Sensitive Field Effect Transistor (ISFET)-based sensor and H+ sensing applications. To meet the potentiometric response of the ISFET that is proportional to various H+ concentrations, the constant-voltage and constant current (CVCS) testing configuration has been used. Low-voltage design skills such as bulk-driven input pair, folded-cascode amplifier, bootstrap switch control circuits have been designed and integrated for 1.5V supply and nearly rail-to-rail analog to digital signal processing. Core modules consist of an 8-bit two-step analog-digital converter and bulk-driven pre-amplifiers have been developed in this research. The experimental results show that the proposed circuitry has an acceptable linearity to 0.1 pH-H+ sensing conversions with the buffer solution in the range of pH2 to pH12. The processor has a potential usage in battery-operated and portable healthcare devices and environmental monitoring applications.

A High Sensitivity Preamplifier for Quartz Tuning Forks in QEPAS (Quartz Enhanced PhotoAcoustic Spectroscopy) Applications

PubMed Central

Starecki, Tomasz

2017-01-01

All the preamplifiers dedicated for Quartz Enhanced PhotoAcoustic Spectroscopy (QEPAS) applications that have so far been reported in the literature have been based on operational amplifiers working in transimpedance configurations. Taking into consideration that QEPAS sensors are based on quartz tuning forks, and that quartz has a relatively high voltage constant and relatively low charge constant, it seems that a transimpedance amplifier is not an optimal solution. This paper describes the design of a quartz QEPAS sensor preamplifier, implemented with voltage amplifier configuration. Discussion of an electrical model of the circuit and preliminary measurements are presented. Both theoretical analysis and experiments show that use of the voltage configuration allows for a substantial increase of the output signal in comparison to the transimpedance circuit with the same tuning fork working in identical conditions. Assuming that the sensitivity of the QEPAS technique depends directly on the properties of the preamplifier, use of the voltage amplifier configuration should result in an increase of QEPAS sensitivity by one to two orders of magnitude. PMID:29099765

A High Sensitivity Preamplifier for Quartz Tuning Forks in QEPAS (Quartz Enhanced PhotoAcoustic Spectroscopy) Applications.

PubMed

Starecki, Tomasz; Wieczorek, Piotr Z

2017-11-03

All the preamplifiers dedicated for Quartz Enhanced PhotoAcoustic Spectroscopy (QEPAS) applications that have so far been reported in the literature have been based on operational amplifiers working in transimpedance configurations. Taking into consideration that QEPAS sensors are based on quartz tuning forks, and that quartz has a relatively high voltage constant and relatively low charge constant, it seems that a transimpedance amplifier is not an optimal solution. This paper describes the design of a quartz QEPAS sensor preamplifier, implemented with voltage amplifier configuration. Discussion of an electrical model of the circuit and preliminary measurements are presented. Both theoretical analysis and experiments show that use of the voltage configuration allows for a substantial increase of the output signal in comparison to the transimpedance circuit with the same tuning fork working in identical conditions. Assuming that the sensitivity of the QEPAS technique depends directly on the properties of the preamplifier, use of the voltage amplifier configuration should result in an increase of QEPAS sensitivity by one to two orders of magnitude.

Thermally-induced voltage alteration for integrated circuit analysis

DOEpatents

Cole, Jr., Edward I.

2000-01-01

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

Motor power factor controller with a reduced voltage starter

NASA Technical Reports Server (NTRS)

Nola, F. J. (Inventor)

1981-01-01

A power factor type motor controller is disclosed in which the conventional power factor constant voltage command signal is replaced during a starting interval with a graduated control voltage. This continuation-impart of a pending patent application (Serial No. 199, 765: Three Phase Factor Controller) provides a means for modifying the operation of the system for a motor start-up interval of 5 to 30 second. Using a ramp generators, an initial ramp-like signal replaces a constant power factor signal supplied by a potentiometer. The ramp-like signal is applied to a 15 terminal where it is summed with an operating power factor signal from phase detectors in order to obtain a control signal for ultimately controlling SCR devices. The SCR devices are turned on at an advancing rate with time responsive to the combination signal described rather than simply a function of a ramp-like signal alone.

High Voltage TAL Performance

NASA Technical Reports Server (NTRS)

Jacobson, David T.; Jankovsky, Robert S.; Rawlin, Vincent K.; Manzella, David H.

2001-01-01

The performance of a two-stage, anode layer Hall thruster was evaluated. Experiments were conducted in single and two-stage configurations. In single-stage configuration, the thruster was operated with discharge voltages ranging from 300 to 1700 V. Discharge specific impulses ranged from 1630 to 4140 sec. Thruster investigations were conducted with input power ranging from 1 to 8.7 kW, corresponding to power throttling of nearly 9: 1. An extensive two-stage performance map was generated. Data taken with total voltage (sum of discharge and accelerating voltage) constant revealed a decrease in thruster efficiency as the discharge voltage was increased. Anode specific impulse values were comparable in the single and two-stage configurations showing no strong advantage for two-stage operation.

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Novel Superdielectric Materials: Aqueous Salt Solution Saturated Fabric

PubMed Central

Phillips, Jonathan

2016-01-01

The dielectric constants of nylon fabrics saturated with aqueous NaCl solutions, Fabric-Superdielectric Materials (F-SDM), were measured to be >105 even at the shortest discharge times (>0.001 s) for which reliable data could be obtained using the constant current method, thus demonstrating the existence of a third class of SDM. Hence, the present results support the general theoretical SDM hypothesis, which is also supported by earlier experimental work with powder and anodized foil matrices: Any material composed of liquid containing dissolved, mobile ions, confined in an electrically insulating matrix, will have a very high dielectric constant. Five capacitors, each composed of a different number of layers of salt solution saturated nylon fabric, were studied, using a galvanostat operated in constant current mode. Capacitance, dielectric constant, energy density and power density as a function of discharge time, for discharge times from ~100 s to nearly 0.001 s were recorded. The roll-off rate of the first three parameters was found to be nearly identical for all five capacitors tested. The power density increased in all cases with decreasing discharge time, but again the observed frequency response was nearly identical for all five capacitors. Operational limitations found for F-SDM are the same as those for other aqueous solution SDM, particularly a low maximum operating voltage (~2.3 V), and dielectric “constants” that are a function of voltage, decreasing for voltages higher than ~0.8 V. Extrapolations of the present data set suggest F-SDM could be the key to inexpensive, high energy density (>75 J/cm3) capacitors. PMID:28774037

Investigation of a generator system for generating electrical power, to supply directly to the public network, using a windmill

NASA Technical Reports Server (NTRS)

Tromp, C.

1979-01-01

A windpowered generator system is described which uses a windmill to convert mechanical energy to electrical energy for a three phase (network) voltage of constant amplitude and frequency. The generator system controls the windmill by the number of revolutions so that the power drawn from the wind for a given wind velocity is maximum. A generator revolution which is proportional to wind velocity is achieved. The stator of the generator is linked directly to the network and a feed converter at the rotor takes care of constant voltage and frequency at the stator.

Doubly Fed Induction Generator in an Offshore Wind Power Plant Operated at Rated V/Hz: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muljadi, E.; Singh, M.; Gevorgian, V.

2012-06-01

This paper introduces the concept of constant Volt/Hz operation of offshore wind power plants. The deployment of offshore WPPs requires power transmission from the plant to the load center inland. Since this power transmission requires submarine cables, there is a need to use High-Voltage Direct Current transmission, which is economical for transmission distances longer than 50 kilometers. In the concept presented here, the onshore substation is operated at 60 Hz synced with the grid, and the offshore substation is operated at variable frequency and voltage, thus allowing the WPP to be operated at constant Volt/Hz.

State memory in solution gated epitaxial graphene

NASA Astrophysics Data System (ADS)

Butko, A. V.; Butko, V. Y.; Lebedev, S. P.; Lebedev, A. A.; Davydov, V. Y.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Kumzerov, Y. A.

2018-06-01

We studied electrical transport in transistors fabricated on a surface of high quality epitaxial graphene with density of defects as low as 5·1010 cm-2 and observed quasistatic hysteresis with a time constant in a scale of hours. This constant is in a few orders of magnitude greater than the constant previously reported in CVD graphene. The hysteresis observed here can be described as a shift of ∼+2V of the Dirac point measured during a gate voltage increase from the position of the Dirac point measured during a gate voltage decrease. This hysteresis can be characterized as a nonvolatile quasistatic state memory effect in which the state of the gated graphene is determined by its initial state prior to entering the hysteretic region. Due to this effect the difference in resistance of the gated graphene measured in the hysteretic region at the same applied voltages can be as high as 70%. The observed effect can be explained by assuming that charge carriers in graphene and oppositely charged molecular ions from the solution form quasistable interfacial complexes at the graphene interface. These complexes likely preserve the initial state by preventing charge carriers in graphene from discharging in the hysteretic region.

Rail-to-rail differential input amplification stage with main and surrogate differential pairs

DOEpatents

Britton, Jr., Charles Lanier; Smith, Stephen Fulton

2007-03-06

An operational amplifier input stage provides a symmetrical rail-to-rail input common-mode voltage without turning off either pair of complementary differential input transistors. Secondary, or surrogate, transistor pairs assume the function of the complementary differential transistors. The circuit also maintains essentially constant transconductance, constant slew rate, and constant signal-path supply current as it provides rail-to-rail operation.

Stress-stress fluctuation formula for elastic constants in the NPT ensemble

NASA Astrophysics Data System (ADS)

Lips, Dominik; Maass, Philipp

2018-05-01

Several fluctuation formulas are available for calculating elastic constants from equilibrium correlation functions in computer simulations, but the ones available for simulations at constant pressure exhibit slow convergence properties and cannot be used for the determination of local elastic constants. To overcome these drawbacks, we derive a stress-stress fluctuation formula in the NPT ensemble based on known expressions in the NVT ensemble. We validate the formula in the NPT ensemble by calculating elastic constants for the simple nearest-neighbor Lennard-Jones crystal and by comparing the results with those obtained in the NVT ensemble. For both local and bulk elastic constants we find an excellent agreement between the simulated data in the two ensembles. To demonstrate the usefulness of the formula, we apply it to determine the elastic constants of a simulated lipid bilayer.

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1996-10-15

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1996-01-01

A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Flexible method for monitoring fuel cell voltage

DOEpatents

Mowery, Kenneth D.; Ripley, Eugene V.

2002-01-01

A method for equalizing the measured voltage of each cluster in a fuel cell stack wherein at least one of the clusters has a different number of cells than the identical number of cells in the remaining clusters by creating a pseudo voltage for the different cell numbered cluster. The average cell voltage of the all of the cells in the fuel cell stack is calculated and multiplied by a constant equal to the difference in the number of cells in the identical cell clusters and the number of cells in the different numbered cell cluster. The resultant product is added to the actual voltage measured across the different numbered cell cluster to create a pseudo voltage which is equivalent in cell number to the number of cells in the other identical numbered cell clusters.

48. VIEW LOOKING NORTHEAST AT EXCITER RESISTANCE GRIDS LOCATED UNDER ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

48. VIEW LOOKING NORTHEAST AT EXCITER RESISTANCE GRIDS LOCATED UNDER THE CONTROL ROOM ON SOUTH SIDE OF TURBINE HALL. THE GRIDS WERE AN ESSENTIAL PART OF THE CONTROL SYSTEM THAT MAINTAINED CONSTANT VOLTAGE ON THE RAILROAD POWER LINES. TIRRILL VOLTAGE REGULATORS (SEE CT-142A-100) SENSED VOLTAGE VARIATIONS AND INITIATED SWITCHING SEQUENCES TO REGULATE THE VOLTAGE AND MAINTAIN A SYSTEM STANDARD VOLTAGE. THE RESISTANCE GRIDS WERE SEQUENTIALLY ADDED TO OR REMOVED FROM THE GENERATOR FIELD COIL CIRCUITS. THIS RESISTANCE LOAD DISSIPATED EXCITIR GENERATOR POWER AS HEAT. THIS IN TURN WOULD VARY THE STRENGTH OF THE FIELD MAGNET AND CONSEQUENTLY RAISE OR LOWER THE OUTPUT VOLTAGE FROM THE MAIN GENERATOR ARMATURE. - New York, New Haven & Hartford Railroad, Cos Cob Power Plant, Sound Shore Drive, Greenwich, Fairfield County, CT

Modelling of fluoride removal via batch monopolar electrocoagulation process using aluminium electrodes

NASA Astrophysics Data System (ADS)

Amri, N.; Hashim, M. I.; Ismail, N.; Rohman, F. S.; Bashah, N. A. A.

2017-09-01

Electrocoagulation (EC) is a promising technology that extensively used to remove fluoride ions efficiently from industrial wastewater. However, it has received very little consideration and understanding on mechanism and factors that affecting the fluoride removal process. In order to determine the efficiency of fluoride removal in EC process, the effect of operating parameters such as voltage and electrolysis time were investigated in this study. A batch experiment with monopolar aluminium electrodes was conducted to identify the model of fluoride removal using empirical model equation. The EC process was investigated using several parameters which include voltage (3 - 12 V) and electrolysis time (0 - 60 minutes) at a constant initial fluoride concentration of 25 mg/L. The result shows that the fluoride removal efficiency increased steadily with increasing voltage and electrolysis time. The best fluoride removal efficiency was obtained with 94.8 % removal at 25 mg/L initial fluoride concentration, voltage of 12 V and 60 minutes electrolysis time. The results indicated that the rate constant, k and number of order, n decreased as the voltage increased. The rate of fluoride removal model was developed based on the empirical model equation using the correlation of k and n. Overall, the result showed that EC process can be considered as a potential alternative technology for fluoride removal in wastewater.

Disinfection by electrohydraulic treatment.

PubMed

Allen, M; Soike, K

1967-04-28

Electrohydraulic treatment was applied to suspensions of Escherichia coli, spores of Bacillus subtilis var. niger, Saccharomyces cerevisiae, and bacteriophage T2 at an input energy that, in most cases, was below the energy required to sterilize. The input energy was held relatively constant for each of these microorganisms, but the capacitance and voltage were varied. Data are presented which show the degree of disinfection as a function of capacitance and voltage. In all cases, the degree of disinfection for a given input energy increases as both capacitance and voltage are lowered.

Elongational flow of polymer melts at constant strain rate, constant stress and constant force

NASA Astrophysics Data System (ADS)

Wagner, Manfred H.; Rolón-Garrido, Víctor H.

2013-04-01

Characterization of polymer melts in elongational flow is typically performed at constant elongational rate or rarely at constant tensile stress conditions. One of the disadvantages of these deformation modes is that they are hampered by the onset of "necking" instabilities according to the Considère criterion. Experiments at constant tensile force have been performed even more rarely, in spite of the fact that this deformation mode is free from necking instabilities and is of considerable industrial relevance as it is the correct analogue of steady fiber spinning. It is the objective of the present contribution to present for the first time a full experimental characterization of a long-chain branched polyethylene melt in elongational flow. Experiments were performed at constant elongation rate, constant tensile stress and constant tensile force by use of a Sentmanat Extensional Rheometer (SER) in combination with an Anton Paar MCR301 rotational rheometer. The accessible experimental window and experimental limitations are discussed. The experimental data are modelled by using the Wagner I model. Predictions of the steady-start elongational viscosity in constant strain rate and creep experiments are found to be identical, albeit only by extrapolation of the experimental data to Hencky strains of the order of 6. For constant stress experiments, a minimum in the strain rate and a corresponding maximum in the elongational viscosity is found at a Hencky strain of the order of 3, which, although larger than the steady-state value, follows roughly the general trend of the steady-state elongational viscosity. The constitutive analysis also reveals that constant tensile force experiments indicate a larger strain hardening potential than seen in constant elongation rate or constant tensile stress experiments. This may be indicative of the effect of necking under constant elongation rate or constant tensile stress conditions according to the Considère criterion.

Insulin increases excitability via a dose-dependent dual inhibition of voltage-activated K+ currents in differentiated N1E-115 neuroblastoma cells.

PubMed

Lima, Pedro A; Vicente, M Inês; Alves, Frederico M; Dionísio, José C; Costa, Pedro F

2008-04-01

A role in the control of excitability has been attributed to insulin via modulation of potassium (K(+)) currents. To investigate insulin modulatory effects on voltage-activated potassium currents in a neuronal cell line with origin in the sympathetic system, we performed whole-cell voltage-clamp recordings in differentiated N1E-115 neuroblastoma cells. Two main voltage-activated K(+) currents were identified: (a) a relatively fast inactivating current (I(fast) - time constant 50-300 ms); (b) a slow delayed rectifying K(+) current (I(slow) - time constant 1-4 s). The kinetics of inactivation of I(fast), rather than I(slow), showed clear voltage dependence. I(fast) and I(slow) exhibited different activation and inactivation dependence for voltage, and have different but nevertheless high sensitivities to tetraethylammonium, 4-aminopyridine and quinidine. In differentiated cells - rather than in non-differentiated cells - application of up to 300 nm insulin reduced I(slow) only (IC(50) = 6.7 nm), whereas at higher concentrations I(fast) was also affected (IC(50) = 7.7 microm). The insulin inhibitory effect is not due to a change in the activation or inactivation current-voltage profiles, and the time-dependent inactivation is also not altered; this is not likely to be a result of activation of the insulin-growth-factor-1 (IGF1) receptors, as application of IGF1 did not result in significant current alteration. Results suggest that the current sensitive to low concentrations of insulin is mediated by erg-like channels. Similar observations concerning the insulin inhibitory effect on slow voltage-activated K(+) currents were also made in isolated rat hippocampal pyramidal neurons, suggesting a widespread neuromodulator role of insulin on K(+) channels.

PEDOT-CNT coated electrodes stimulate retinal neurons at low voltage amplitudes and low charge densities

NASA Astrophysics Data System (ADS)

Samba, R.; Herrmann, T.; Zeck, G.

2015-02-01

Objective. The aim of this study was to compare two different microelectrode materials—the conductive polymer composite poly-3,4-ethylenedioxythiophene (PEDOT)-carbon nanotube(CNT) and titanium nitride (TiN)—at activating spikes in retinal ganglion cells in whole mount rat retina through stimulation of the local retinal network. Stimulation efficacy of the microelectrodes was analyzed by comparing voltage, current and transferred charge at stimulation threshold. Approach. Retinal ganglion cell spikes were recorded by a central electrode (30 μm diameter) in the planar grid of an electrode array. Extracellular stimulation (monophasic, cathodic, 0.1-1.0 ms) of the retinal network was performed using constant voltage pulses applied to the eight surrounding electrodes. The stimulation electrodes were equally spaced on the four sides of a square (400 × 400 μm). Threshold voltage was determined as the pulse amplitude required to evoke network-mediated ganglion cell spiking in a defined post stimulus time window in 50% of identical stimulus repetitions. For the two electrode materials threshold voltage, transferred charge at threshold, maximum current and the residual current at the end of the pulse were compared. Main results. Stimulation of retinal interneurons using PEDOT-CNT electrodes is achieved with lower stimulation voltage and requires lower charge transfer as compared to TiN. The key parameter for effective stimulation is a constant current over at least 0.5 ms, which is obtained by PEDOT-CNT electrodes at lower stimulation voltage due to its faradaic charge transfer mechanism. Significance. In neuroprosthetic implants, PEDOT-CNT may allow for smaller electrodes, effective stimulation in a safe voltage regime and lower energy-consumption. Our study also indicates, that the charge transferred at threshold or the charge injection capacity per se does not determine stimulation efficacy.

Bias-stress characterization of solution-processed organic field-effect transistor based on highly ordered liquid crystals

NASA Astrophysics Data System (ADS)

Kunii, M.; Iino, H.; Hanna, J.

2017-06-01

Bias-stress effects in solution-processed, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) field effect transistors (FETs) are studied under negative and positive direct current bias. The bottom gate, bottom contact polycrystalline Ph-BTBT-10 FET with a hybrid gate dielectric of polystyrene and SiO2 shows high field effect mobility as well as a steep subthreshold slope when fabricated with a highly ordered smectic E liquid crystalline (SmE) film as a precursor. Negative gate bias-stress causes negative threshold voltage shift (ΔVth) for Ph-BTBT-10 FET in ambient air, but ΔVth rapidly decreases as the gate bias decreases and approaches to near zero when the gate bias goes down to 9 V in amplitude. In contrast, positive gate bias-stress causes negligible ΔVth even with a relatively high bias voltage. These results conclude that Ph-BTBT-10 FET has excellent bias-stress stability in ambient air in the range of low to moderate operating voltages.

The effect of load and thickness variation on stress analysis of monocoque frame of electric city car using FEM

NASA Astrophysics Data System (ADS)

Makhrojan, Agus; Suprihadi, Agus; Budi, Sigit Setijo; Jamari, J.; Ismail, Rifky

2017-01-01

The electric car is transportation which growing and constantly put through improvisation vehicle design. One of the structural components of the electric car which holds a major role is a frame. The purpose of this study is to get monocoque frame design which lightweight and powerful for a city car with two passengers that was able to improve the efficiency of the battery voltage source. Monocoque frame should be able to accept the normal loads such as the weight of batteries, passenger, and body. The most important thing, monocoque frame should also be able to protect the driver and passengers in the event of a collision. Mild steel was chosen for the design because it is easy to obtain and reasonable price as well as easy to shaped for two-seater electric car. FEM (finite element method) was used to determine stress determination and rigidity of the monocoque frame when receiving a static load. The results show that the monocoque frame was still able to withstand the required loads with minimal deflection.

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

NASA Technical Reports Server (NTRS)

Liu, David (Donhang)

2011-01-01

Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors in decoupling applications. A surge step stress test (SSST) has been previously applied to identify the critical stress level of a capacitor batch to give some predictability to the power-on failure mechanism [1]. But SSST can also be viewed as an electrically destructive test under a time-varying stress (voltage). It consists of rapidly charging the capacitor with incremental voltage increases, through a low resistance in series, until the capacitor under test is electrically shorted. When the reliability of capacitors is evaluated, a highly accelerated life test (HALT) is usually adopted since it is a time-efficient method of determining the failure mechanism; however, a destructive test under a time-varying stress such as SSST is even more time efficient. It usually takes days or weeks to complete a HALT test, but it only takes minutes for a time-varying stress test to produce failures. The advantage of incorporating a specific time-varying stress profile into a statistical model is significant in providing an alternative life test method for quickly revealing the failure mechanism in capacitors. In this paper, a time-varying stress that mimics a typical SSST has been incorporated into the Weibull model to characterize the failure mechanism in different types of capacitors. The SSST circuit and transient conditions for correctly surge testing capacitors are discussed. Finally, the SSST was applied for testing Ta capacitors, polymer aluminum capacitors (PA capacitors), and multi-layer ceramic (MLC) capacitors with both precious metal electrodes (PME) and base metal electrodes (BME). The test results are found to be directly associated with the dielectric layer breakdown in Ta and PA capacitors and are independent of the capacitor values, the way the capacitors were built, and the capacitors manufacturers. The test results also show that MLC capacitors exhibit surge breakdown voltages much higher than the rated voltage and that the breakdown field is inversely proportional to the dielectric layer thickness. The SSST data can also be used to comparatively evaluate the voltage robustness of capacitors for decoupling applications.

Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application

NASA Astrophysics Data System (ADS)

Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-04-01

We propose a new version of the post fabrication static random access memory (SRAM) self-improvement technique, which utilizes multiple stress application. It is demonstrated that, using a device matrix array (DMA) test element group (TEG) with intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) six-transistor (6T) SRAM cells fabricated by the 65 nm technology, the lowering of data retention voltage (DRV) is more effectively achieved than using the previously proposed single stress technique.

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sermage, B.; Essa, Z.; Taleb, N.

2016-04-21

The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C{sup 2} versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, wemore » show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.« less

Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets

NASA Astrophysics Data System (ADS)

Mativenga, Mallory; Kang, Dong Han; Lee, Ung Gi; Jang, Jin

2012-09-01

Bias instability of top-gate amorphous-indium-gallium-zinc-oxide thin-film transistors with source- and drain-offsets is reported. Positive and negative gate bias-stress (VG_STRESS) respectively induce reversible negative threshold-voltage shift (ΔVTH) and reduction in on-current. Migration of positive charges towards the offsets lowers the local resistance of the offsets, resulting in the abnormal negative ΔVTH under positive VG_STRESS. The reduction in on-current under negative VG_STRESS is due to increase in resistance of the offsets when positive charges migrate away from the offsets. Appropriate drain and source bias-stresses applied simultaneously with VG_STRESS either suppress or enhance the instability, verifying lateral ion migration to be the instability mechanism.

Genetically encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics.

PubMed

Baker, Bradley J; Jin, Lei; Han, Zhou; Cohen, Lawrence B; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

2012-07-15

A substantial increase in the speed of the optical response of genetically encoded fluorescent protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1-S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tau(off)<5ms). However, the signal was small (ΔF/F=0.4%/200mV). FP voltage sensors using the D. rerio voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2ms of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. Copyright © 2012 Elsevier B.V. All rights reserved.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

A Fresh Look at the Semiconductor Bandgap Using Constant Current Data

ERIC Educational Resources Information Center

Ocaya, R. O.; Luhanga, P. V. C.

2011-01-01

It is shown that the well-known linear variation of p-n diode terminal voltage with temperature at different fixed forward currents allows easy and accurate determination of the semiconductor ideality factor and bandgap from only two data points. This is possible if the temperature difference required to maintain the same diode voltage drop can be…

Voltage-independent inhibition of Ca(V)2.2 channels is delimited to a specific region of the membrane potential in rat SCG neurons.

PubMed

Vivas, Oscar; Arenas, Isabel; García, David E

2012-06-01

Neurotransmitters and hormones regulate Ca(V)2.2 channels through a voltage-independent pathway which is not well understood. It has been suggested that this voltage-independent inhibition is constant at all membrane voltages. However, changes in the percent of voltage-independent inhibition of Ca(V)2.2 have not been tested within a physiological voltage range. Here, we used a double-pulse protocol to isolate the voltage-independent inhibition of Ca(V)2.2 channels induced by noradrenaline in rat superior cervical ganglion neurons. To assess changes in the percent of the voltage-independent inhibition, the activation voltage of the channels was tested between -40 and +40 mV. We found that the percent of voltage-independent inhibition induced by noradrenaline changed with the activation voltage used. In addition, voltage-independent inhibition induced by oxo-M, a muscarinic agonist, exhibited the same dependence on activation voltage, which supports that this pattern is not exclusive for adrenergic activation. Our results suggested that voltage-independent inhibition of Ca(V)2.2 channels depends on the activation voltage of the channel in a physiological voltage range. This may have relevant implications in the understanding of the mechanism involved in voltage-independent inhibition.

Transient Performance Improvement Circuit (TPIC)s for DC-DC converter applications

NASA Astrophysics Data System (ADS)

Lim, Sungkeun

Gordon Moore famously predicted the exponential increase in transistor integration and computing power that has been witnessed in recent decades [1]. In the near future, it is expected that more than one billion transistors will be integrated per chip, and advanced microprocessors will require clock speeds in excess of several GHz. The increasing number of transistors and high clock speeds will necessitate the consumption of more power. By 2014, it is expected that the maximum power consumption of the microprocessor will reach approximately 150W, and the maximum load current will be around 150A. Today's trend in power and thermal management is to reduce supply voltage as low as possible to reduce delivered power. It is anticipated that the Intel cores will operate on 0.8V of supply voltage by 2014 [2]. A significant challenge in Voltage Regulator Module (VRM) development for next generation microprocessors is to regulate the supply voltage within a certain tolerance band during high slew rate load transitions, since the required supply voltage tolerance band will be much narrower than the current requirement. If VR output impedance is maintained at a constant value from DC to high frequency, large output voltage spikes can be avoided during load cur- rent transients. Based on this, the Adaptive Voltage Position (AVP) concept was developed to achieve constant VR output impedance to improve transient response performance [3]. However, the VR output impedance can not be made constant over the entire frequency range with AVP design, because the AVP design makes the VR output impedance constant only at low frequencies. To make the output impedance constant at high frequencies, many bulk capacitors and ceramic capacitors are required. The tight supply voltage tolerance for the next generation of microprocessors during high slew rate load transitions requires fast transient response power supplies. A VRM can not follow the high slew rate load current transients, because of the slow inductor current slew rate which is determined by the input voltage, output voltage, and the inductance. The remaining inductor current in the power delivery path will charge the output capacitors and develop a voltage across the ESR. As a result, large output voltage spikes occur during load current transients. Due to their limited control bandwidth, traditional VRs can not sufficiently respond rapidly to certain load transients. As a result, a large output voltage spike can occur during load transients, hence requiring a large amount of bulk capacitance to decouple the VR from the load [2]. If the remaining inductor current is removed from the power stage or the inductor current slew rate is changed, the output voltage spikes can be clamped, allowing the output capacitance to be reduced. A new design methodology for a Transient Performance Improvement Circuit(TPIC) based on controlling the output impedance of a regulator is presented. The TPIC works in parallel with a voltage regulator (VR)'s ceramic capacitors to achieve faster voltage regulation without the need for a large bulk capacitance, and can serve as a replacement for bulk capacitors. The specific function of the TPIC is to mimic the behavior of the bulk capacitance in a traditional VRM by sinking and sourcing large currents during transients, allowing the VR to respond quickly to current transients without the need for a large bulk capacitance. This will allow fast transient response without the need for a large bulk capacitor. The main challenge in applying the TPIC is creating a design which will not interfere with VR operation. A TPIC for a 4 Switch Buck-Boost (4SBB) converter is presented which functions by con- trolling the inductor current slew rate during load current transients. By increasing the inductor current slew rate, the remaining inductor current can be removed from the 4SBB power delivery path and the output voltage spike can be clamped. A second TPIC is presented which is designed to improve the performance of an LDO regulator during output current transients. A TPIC for a LDO regulator is proposed to reduce the over voltage spike settling time. During a load current step down transient, the only current discharging path is a light load current. However, it takes a long time to discharge the current charged in the output capacitors with the light load current. The proposed TPIC will make an additional current discharging path to reduce the long settling time. By reducing the settling time, the load current transient frequency of the LDO regulator can be increased. A Ripple Cancellation Circuit (RCC) is proposed to reduce the output voltage ripple. The RCC has a very similar concept with the TPIC which is sinking or injecting additional current to the power stage to compensate the inductor ripple current. The proposed TPICs and RCC have been implemented with a 0.6m CMOS process. A single-phase VR, a 4SBB converter, and a LDO regulator have been utilized with the proposed TPIC to evaluate its performance. The theoretical analysis will be confirmed by Cadence simulation results and experimental results.

Stressed photoconductive detector for far-infrared space applications

NASA Technical Reports Server (NTRS)

Wang, J.-Q.; Richards, P. L.; Beeman, J. W.; Haller, E. E.

1987-01-01

An optimized leaf-spring apparatus for applying uniaxial stress to a Ge:Ga far-IR photoconductor has been designed and tested. This design has significant advantages for space applications which require high quantum efficiency and stable operation over long periods of time. The important features include adequate spring deflection with relatively small overall size, torque-free stress, easy measurement of applied stress, and a detector configuration with high responsivity. One-dimensional arrays of stressed photoconductors can be constructed using this design. A peak responsivity of 38 A/W is achieved in a detector with a cutoff wavelength of 200 microns, which was operated at a temperature of 2.0 K and a bias voltage equal to one-half of the breakdown voltage.

Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors

NASA Astrophysics Data System (ADS)

Hossain Chowdhury, Md Delwar; Migliorato, Piero; Jang, Jin

2013-04-01

We have investigated the temperature dependence of negative bias under illumination stress and recovery. The transfer characteristics exhibits a non-rigid shift towards negative gate voltages. For both stress and recovery, the voltage shift in deep depletion is twice that in accumulation. The results support the mechanism we previously proposed, which is creation and annealing of a double donor, likely to be an oxygen vacancy. The time dependence of stress and recovery can be fitted to stretched exponentials. Both processes are thermally activated with activation energies 1.06 eV and 1.25 eV for stress and recovery, respectively. A potential energy diagram is proposed to explain the results.

Batteryless magneto-driven portable radiac

DOEpatents

Waechter, D.A.; Bjarke, G.O.; Trujillo, F.; Wolf, M.A.; Umbarger, C.J.

1984-10-19

A hand-powerd alternator for generating an alternating voltage provides same through a rectifier to a high capacity capacitor which stores the resultant dc voltage and drives a voltage regulator to provide a constant low voltage output for a portable radiation detection instrument. The instrument includes a Geiger-Mueller detector tube whose output is fed to a pulse detector and then through an event counter and LCD driver circuit to an LCD bar graph for visual display. An audio driver and an audio output is also provided. All circuitry used is low power so that the capacitor can be readily charged to a sufficient level to provide power for at least 30 minutes. A low voltage indicator is provided on the LCD display to indicate the need for manual recharging.

Apparatus and method for maximizing power delivered by a photovoltaic array

DOEpatents

Muljadi, Eduard; Taylor, Roger W.

1998-01-01

A method and apparatus for maximizing the electric power output of a photovoltaic array connected to a battery where the voltage across the photovoltaic array is adjusted through a range of voltages to find the voltage across the photovoltaic array that maximizes the electric power generated by the photovoltaic array and then is held constant for a period of time. After the period of time has elapsed, the electric voltage across the photovoltaic array is again adjusted through a range of voltages and the process is repeated. The electric energy and the electric power generated by the photovoltaic array is delivered to the battery which stores the electric energy and the electric power for later delivery to a load.

PEAK READING VOLTMETER

DOEpatents

Dyer, A.L.

1958-07-29

An improvement in peak reading voltmeters is described, which provides for storing an electrical charge representative of the magnitude of a transient voltage pulse and thereafter measuring the stored charge, drawing oniy negligible energy from the storage element. The incoming voltage is rectified and stored in a condenser. The voltage of the capacitor is applied across a piezoelectric crystal between two parallel plates. Amy change in the voltage of the capacitor is reflected in a change in the dielectric constant of the crystal and the capacitance between a second pair of plates affixed to the crystal is altered. The latter capacitor forms part of the frequency determlning circuit of an oscillator and means is provided for indicating the frequency deviation which is a measure of the peak voltage applied to the voltmeter.

Apparatus and method for maximizing power delivered by a photovoltaic array

DOEpatents

Muljadi, E.; Taylor, R.W.

1998-05-05

A method and apparatus for maximizing the electric power output of a photovoltaic array connected to a battery where the voltage across the photovoltaic array is adjusted through a range of voltages to find the voltage across the photovoltaic array that maximizes the electric power generated by the photovoltaic array and then is held constant for a period of time. After the period of time has elapsed, the electric voltage across the photovoltaic array is again adjusted through a range of voltages and the process is repeated. The electric energy and the electric power generated by the photovoltaic array is delivered to the battery which stores the electric energy and the electric power for later delivery to a load. 20 figs.

Batteryless magneto-driven portable radiac

DOEpatents

Waechter, David A.; Bjarke, George O.; Trujillo, Faustin; Wolf, Michael A.; Umbarger, C. John

1986-01-01

A hand-powered alternator for generating an alternating voltage provides same through a rectifier to a high capacity capacitor which stores the resultant dc voltage and drives a voltage regulator to provide a constant low voltage output for a portable radiation detection instrument. The instrument includes a Geiger-Muller detector tube whose output is fed to a pulse detector and then through an event counter and LCD driver circuit to an LCD bar graph for visual display. An audio driver and an audio output is also provided. All circuitry used is low power so that the capacitor can be readily charged to a sufficient level to provide power for at least 30 minutes. A low voltage indicator is provided on the LCD display to indicate the need for manual recharging.

Voltage droop Coordinating Control applied in UPFC and STATCOM system

NASA Astrophysics Data System (ADS)

Junhui, Huang; Zhuyi, Peng; Chengjie, Ni; Yiqing, Xu; Jiliang, Xue

2018-04-01

When UPFC, unified power flow controller is applied with other FACTS into power grid, it is possible that the voltage controlled vibrates constantly to response to a sudden reactive power turbulent in grid if the parameters of these FACTS are not coordinating reasonably. Moreover, the reactive power generated by these equipment will intertwine unexpectedly. The article proposes a method named voltage-reactive power droop control to allow the reference voltage fluctuating around the rating voltage so that the vibration is reduced and the power distribution is improved. Finally, the article cite a electric-magnetic simulation by EMTDC models of east-China power grid to prove it effective when applied to improve the response characteristics to sudden turbulence in power grid.

Switched-capacitor isolated LED driver

DOEpatents

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

Hafnium transistor process design for neural interfacing.

PubMed

Parent, David W; Basham, Eric J

2009-01-01

A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.

Voltage-Induced Nonlinear Conduction Properties of Epoxy Resin/Micron-Silver Particles Composites

NASA Astrophysics Data System (ADS)

Qu, Zhaoming; Lu, Pin; Yuan, Yang; Wang, Qingguo

2018-01-01

The nonlinear conduction properties of epoxy resin (ER)/micron-silver particles (MP) composites were investigated. Under sufficient high intensity applied constant voltage, the obvious nonlinear conduction properties of the samples with volume fraction 25% were found. With increments in the voltage, the conductive switching effect was observed. The nonlinear conduction mechanism of the ER/MP composites under high applied voltages could be attributed to the electrical current conducted via discrete paths of conductive particles induced by the electric field. The test results show that the ER/MP composites with nonlinear conduction properties are of great potential application in electromagnetic protection of electron devices and systems.

Real Time Computer Control of Neutral Beam Energy and Current During a DIII-D Tokamak Shot

NASA Astrophysics Data System (ADS)

Pawley, C. J.; Pace, D. C.; Rauch, J. M.; Scoville, J. T.

2017-10-01

A new control system has been implemented on DIII-D neutral beams which has been used during the 2016 and 2017 experimental campaign to directly change the beam acceleration voltage (V) and beam current (I) by the Plasma Control System (PCS) during a shot. Small changes in the beam voltage of 1-2 kV can be made in 1 msec or larger changes of up to 20kV in 0.5 seconds. The beam current can be modified by as much as +/-20% at a fixed beam voltage. Since both can be independently and simultaneously changed it is possible to change beam power (IV) at fixed voltage, keep constant power while sweeping beam voltage, or to maintain minimum beam divergence during a beam voltage sweep by changing I simultaneously to keep a constant beam perveance. The limitations of the variability will be presented with required changes in equipment to extend either the speed or range of the controls. Some of the effects on fast ion plasma instabilities or other plasma mode changes made possible by this control will also be presented (see also D.C. Pace, this conference). Design and changes to the control system was performed under General Atomics Internal Research and Development support, while plasma experiments on DIII-D were supported in part by the US Department of Energy under Award No. DE-FC02-04ER54698.

Underlying Physics of Conductive Polymer Composites and Force Sensing Resistors (FSRs) under Static Loading Conditions

PubMed Central

2017-01-01

Conductive polymer composites are manufactured by randomly dispersing conductive particles along an insulating polymer matrix. Several authors have attempted to model the piezoresistive response of conductive polymer composites. However, all the proposed models rely upon experimental measurements of the electrical resistance at rest state. Similarly, the models available in literature assume a voltage-independent resistance and a stress-independent area for tunneling conduction. With the aim of developing and validating a more comprehensive model, a test bench capable of exerting controlled forces has been developed. Commercially available sensors—which are manufactured from conductive polymer composites—have been tested at different voltages and stresses, and a model has been derived on the basis of equations for the quantum tunneling conduction through thin insulating film layers. The resistance contribution from the contact resistance has been included in the model together with the resistance contribution from the conductive particles. The proposed model embraces a voltage-dependent behavior for the composite resistance, and a stress-dependent behavior for the tunneling conduction area. The proposed model is capable of predicting sensor current based upon information from the sourcing voltage and the applied stress. This study uses a physical (non-phenomenological) approach for all the phenomena discussed here. PMID:28906467

The inverse power law model for the lifetime of a mylar-polyurethane laminated dc hv insulating structure

NASA Astrophysics Data System (ADS)

Kalkanis, G.; Rosso, E.

1989-09-01

Results of an accelerated test on the lifetime of a mylar-polyurethane laminated dc high voltage insulating structure are reported. This structure consists of mylar ribbons placed side by side in a number of layers, staggered and glued together with a polyurethane adhesive. The lifetime until breakdown as a function of extremely high values of voltage stress is measured and represented by a mathematical model, the inverse power law model with a 2-parameter Weibull lifetime distribution. The statistical treatment of the data — either by graphical or by analytical methods — allowed us to estimate the lifetime distribution and confidence bounds for any required normal voltage stress. The laminated structure under consideration is, according to the analysis, a very reliable dc hv insulating material, with a very good life performance according to the inverse power law model, and with an exponent of voltage stress equal to 6. A large insulator of cylindrical shape with this kind of laminated structure can be constructed by winding helically a mylar ribbon in a number of layers.

Voltage-Gated Lipid Ion Channels

PubMed Central

Blicher, Andreas; Heimburg, Thomas

2013-01-01

Synthetic lipid membranes can display channel-like ion conduction events even in the absence of proteins. We show here that these events are voltage-gated with a quadratic voltage dependence as expected from electrostatic theory of capacitors. To this end, we recorded channel traces and current histograms in patch-experiments on lipid membranes. We derived a theoretical current-voltage relationship for pores in lipid membranes that describes the experimental data very well when assuming an asymmetric membrane. We determined the equilibrium constant between closed and open state and the open probability as a function of voltage. The voltage-dependence of the lipid pores is found comparable to that of protein channels. Lifetime distributions of open and closed events indicate that the channel open distribution does not follow exponential statistics but rather power law behavior for long open times. PMID:23823188

Electrical quantum standards and their role in the SI

NASA Astrophysics Data System (ADS)

Robinson, Ian; Georgakopoulos, Dimitrios

2012-12-01

The International System of Units, SI, is poised to make a quantum change and become a measurement system based entirely on the fundamental properties of the natural world. In the next version of the SI, the Planck constant h, the elementary charge e, the Avogadro constant NA and the Boltzmann constant k will be fixed, in addition to the already fixed values of the speed of light c and the ground state hyperfine splitting in caesium-133. As a result, six out of the seven base units of the SI will be based directly on true invariants of nature. A major part of this change has been enabled by the ready availability of electrical quantum standards of exquisite precision and mechanisms for using them to make measurements outside the electrical arena. The overall effect will be to eliminate the remaining imprecise definitions of physical units associated with the use of artefact standards and aid direct SI measurements without problems of scaling. Fixing the Planck constant and the elementary charge will have the effect of incorporating the best physical realizations of electrical quantities into the SI, providing a system of units fit for the 21st century. The purpose of this special feature is to review the status of electrical quantum standards and report the latest developments in those areas and their applications to other areas of metrology. The special feature coincides with the 50th anniversary of the seminal paper of Josephson, 'Possible new effects in superconductive tunnelling' [1], which established the basic physical principle upon which the quantum voltage standards are based. Josephson voltage standards are based on the inverse Josephson effect. When a junction of two superconducting electrodes, weakly linked through a thin insulator or a normal metal, is irradiated with a radiofrequency electromagnetic field of frequency f and is biased by a dc current, then the voltage across the junction is quantized (i.e. small changes in either the dc current or the power of the rf irradiation, or both, do not change the voltage). The value of this quantized Josephson voltage is equal to nfh/2e, where n is the quantum step of the current-voltage characteristic curve. In this special feature there are three papers on dc Josephson voltage standards. Solve and Stock review the programme conducted by the Bureau International des Poids et Mesures (BIPM) to perform on-site comparisons of Josephson voltage standards, and give a comprehensive analysis of the possible sources of errors of such comparisons. Behr et al summarize the developments of Josephson voltage standards at Physikalisch-Technische Bundesanstalt (PTB) and their applications in dc voltage and other areas of metrology. Finally, Georgakopoulos et al report a reduction, by a factor of a thousand, in the smallest voltage that can be generated by dc Josephson voltage standards. Although dc voltage standards are well established, significant challenges exist when extending this extremely precise technology to ac. There are two approaches to producing accurate ac voltages using the inverse Josephson effect: the programmable Josephson voltage standard (PJVS) and the pulse-driven ac voltage standard. The PJVS contains an array of Josephson junctions, organized into independently biased segments. By biasing chosen, binary-related, segments on the first quantum step (positive or negative) or zero, the array can be made to behave as a quantum digital to analogue converter. The PJVS approach can produce stepwise approximated sine waves with rms values of some volts, but it suffers from parasitic capacitances and inductances distributed in the different parts of the system and, more importantly, the voltage is not quantized during the finite transition time between successive voltage levels. Hence the output frequency of PJVS-based systems is limited to a few kilohertz. In this special feature, Jeanneret et al review the Josephson locked synthesizer, a PJVS-based system where the effect of transients between successive steps on the output voltage is reduced. This special feature also presents two applications of PJVS-based quantum voltage standards: the evaluation of conventional ac voltage standards based on thermal converters (Budovsky et al) and the measurement of the settling time of a high resolution digital voltmeter (Henderson et al). In the pulse-driven ac voltage standard, arbitrary voltages can be produced by modulating the rf irradiation of an array of Josephson junctions by a series of high frequency pulses, usually by means of Δ-Σ modulation. The output voltage of the array of junctions is a series of quantized voltage pulses that correspond to the desired waveform after the high frequency components are removed. The pulse-driven standard can operate at much higher frequencies than the PJVS. Eliminating the effects of parasitic impedances of the, necessarily long, connecting leads therefore becomes a significant challenge. In this special feature, van den Brom and Houtzager report a voltage lead correction technique. Quantum resistance standards are based on the quantum Hall effect in which the resistance of a two-dimensional electron gas in a strong magnetic field is quantized. The value of the quantized Hall resistance is h/ie2, where i is the number of the quantum step in the resistance-magnetic field curve. Quantum Hall resistance devices can be combined in series to form a resistive voltage divider with low uncertainty in the ratio. In this special feature, Domae et al report the realization of such a resistive voltage divider on a chip. Quantum Hall resistance standards have been routinely used at dc for over two decades. However, the operation of quantum Hall devices at ac is complicated by the flow of current in capacitances around the device, which can compromise measurement of its resistance. Schurr et al review the status of ac quantum Hall resistance standards and their role in the SI. Ohm's law can be applied to quantum realizations of voltage, resistance and current to test their consistency. Active research into this 'metrological triangle' is underway and, at present, there is no evidence to indicate a discrepancy at any level. However, work is continuing on current sources which utilize a countable flow of electrons (the electric current produced is proportional to ef, f being the operating frequency of the device), but the work has some way to go before the question of consistency can be resolved at levels approaching 1 part in 109. In this special feature, Scherer and Camarota review the state-of-the-art of metrological triangle experiments and Devoille et al report on the status of the metrological triangle experiment at the Laboratoire National de Métrologie et d'Essais (LNE), France. The availability of precise representations of the volt and the ohm based on quantum mechanics has enabled the watt balance, an apparatus which relates electrical and mechanical power, to link the kilogram to the Planck constant. This has paved the way for the proposed redefinition of the kilogram, the last artefact standard in the SI, in terms of a fixed value of the Planck constant. In the past few years a number of papers, e.g. [2, 3], have been published describing the working principles of the watt balance and the characteristics of the existing implementations of the experiment. The measurements of the principal quantities—mass, velocity, gravitational acceleration, resistance and voltage—are reasonably well documented but the ultimate precision of the apparatus depends on a number of techniques that are required to eliminate second-order effects. In this special feature, Robinson provides details of these general alignment techniques with special reference to the NPL Mark II watt balance. Acknowledgments We would like to thank the authors for supporting the special feature with their excellent contributions; the guardians of the quality of a scientific paper, the referees, for their valuable comments and suggestions; Professor Wuqiang Yang and the members of the editorial board of Measurement Science and Technology for their support. Finally, we would like to thank Dr Sharon D'Souza, James Dimond and all the editorial and publication staff at Measurement Science and Technology, for their help in making the special feature a reality. References [1] Josephson B D 1962 Possible new effects in superconductive tunnelling Phys. Lett. 1 251-3 [2] Li S, Han B, Li Z and Lan J 2012 Precisely measuring the Planck constant by electromechanical balances Measurement 45 1-13 [3] Stock M 2011 The watt balance: determination of the Planck constant and redefinition of the kilogram Phil. Trans. R. Soc. A 369 3936-53

Slow Crack Growth Analysis of Advanced Structural Ceramics Under Combined Loading Conditions: Damage Assessment in Life Prediction Testing

NASA Technical Reports Server (NTRS)

Choi, S. R.; Gyekenyesi, J. P.

2001-01-01

Slow crack growth analysis was performed with three different loading histories including constant stress- rate/constant stress-rate testing (Case I loading), constant stress/constant stress-rate testing (Case II loading), and cyclic stress/constant stress-rate testing (Case III loading). Strength degradation due to slow crack growth and/or damage accumulation was determined numerically as a function of percentage of interruption time between the two loading sequences for a given loading history. The numerical solutions were examined with the experimental data determined at elevated temperatures using four different advanced ceramic materials, two silicon nitrides, one silicon carbide and one alumina for the Case I loading history, and alumina for the Case II loading history. The numerical solutions were in reasonable agreement with the experimental data, indicating that notwithstanding some degree of creep deformation presented for some test materials slow crack growth was a governing mechanism associated with failure for all the rest materials.

Slow Crack Growth Analysis of Advanced Structural Ceramics Under Combined Loading Conditions: Damage Assessment in Life Prediction Testing

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Gyekenyesi, John P.

2000-01-01

Slow crack growth analysis was performed with three different loading histories including constant stress-rate/constant stress-rate testing (Case 1 loading), constant stress/constant stress-rate testing (Case 2 loading), and cyclic stress/constant stress-rate testing (Case 2 loading). Strength degradation due to slow crack growth and/or damage accumulation was determined numerically as a function of percentage of interruption time between the two loading sequences for a given loading history. The numerical solutions were examined with the experimental data determined at elevated temperatures using four different advanced ceramic materials, two silicon nitrides, one silicon carbide and one alumina for the Case 1 loading history, and alumina for the Case 3 loading history. The numerical solutions were in reasonable agreement with the experimental data, indicating that notwithstanding some degree of creep deformation presented for some test materials slow crack growth was a governing mechanism associated with failure for all the test materials.

Slow Crack Growth Analysis of Advanced Structural Ceramics Under Combined Loading Conditions: Damage Assessment in Life Prediction Testing

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Gyekenyesi, John P.

2000-01-01

Slow crack growth analysis was performed with three different loading histories including constant stress-rate/constant stress-rate testing (Case I loading), constant stress/constant stress-rate testing (Case II loading), and cyclic stress/constant stress-rate testing (Case III loading). Strength degradation due to slow crack growth arid/or damage accumulation was determined numerically as a Function of percentage of interruption time between the two loading sequences for a given loading history. The numerical solutions were examined with the experimental data determined at elevated temperatures using four different advanced ceramic materials, two silicon nitrides, one silicon carbide and one alumina for the Case I loading history, and alumina for the Case II loading history. The numerical solutions were in reasonable agreement with the experimental data, indicating that notwithstanding some degree of creep deformation presented for some test materials slow crack growth was a governing mechanism associated with failure for all the test material&

Nonlinear antiferroelectric-like capacitance-voltage curves in ferroelectric BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Jiang, A. Q.; Zhang, D. W.; Tang, T. A.

2013-07-01

The ferroelectric capacitance is usually nonlinear against increasing/decreasing voltage in sweeping time longer than 1 s and achieves a maximum value at around a coercive voltage within each loop. With the improved short-pulse measurements, we estimated the differential capacitance of ferroelectric Au/BiFeO3/LaNiO3/SrTiO3 thin-film capacitors from a nanosecond discharging current induced by a delta voltage after a stressing voltage pulse with widths of 500 ns-50 ms. With the shortening of the voltage sweeping time, we clearly observed two capacitance maxima from each branch of a capacitance-voltage (C-V) loop, reminiscent of an antiferroelectric behavior. After transformation of nanosecond domain switching current transients under pulses into polarization-voltage hysteresis loops, we further measured time dependent polarization retention as well as imprint in the range of 100 ns-1 s. Both positive and negative polarizations decay exponentially at characteristic times of 2.25 and 198 μs, suggesting the coexistence of preferred domains pointing to top and bottom electrodes in most epitaxial films. This exponential time dependence is similar to the dielectric degradation under a dc voltage, and the polarization retention can be improved through long-time opposite voltage stressing. With this improvement, the additional antiferroelectric-like dielectric maximum within each branch of a C-V loop disappears. This experiment provides the strong evidence of the effect of time-dependent charge injection on polarization retention and dielectric degradation.

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1979-01-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Voltage and Current Clamp Transients with Membrane Dielectric Loss

PubMed Central

Fitzhugh, R.; Cole, K. S.

1973-01-01

Transient responses of a space-clamped squid axon membrane to step changes of voltage or current are often approximated by exponential functions of time, corresponding to a series resistance and a membrane capacity of 1.0 μF/cm2. Curtis and Cole (1938, J. Gen. Physiol. 21:757) found, however, that the membrane had a constant phase angle impedance z = z1(jωτ)-α, with a mean α = 0.85. (α = 1.0 for an ideal capacitor; α < 1.0 may represent dielectric loss.) This result is supported by more recently published experimental data. For comparison with experiments, we have computed functions expressing voltage and current transients with constant phase angle capacitance, a parallel leakage conductance, and a series resistance, at nine values of α from 0.5 to 1.0. A series in powers of tα provided a good approximation for short times; one in powers of t-α, for long times; for intermediate times, a rational approximation matching both series for a finite number of terms was used. These computations may help in determining experimental series resistances and parallel leakage conductances from membrane voltage or current clamp data. PMID:4754194

PSO Based PI Controller Design for a Solar Charger System

PubMed Central

Yau, Her-Terng; Lin, Chih-Jer; Liang, Qin-Cheng

2013-01-01

Due to global energy crisis and severe environmental pollution, the photovoltaic (PV) system has become one of the most important renewable energy sources. Many previous studies on solar charger integrated system only focus on load charge control or switching Maximum Power Point Tracking (MPPT) and charge control modes. This study used two-stage system, which allows the overall portable solar energy charging system to implement MPPT and optimal charge control of Li-ion battery simultaneously. First, this study designs a DC/DC boost converter of solar power generation, which uses variable step size incremental conductance method (VSINC) to enable the solar cell to track the maximum power point at any time. The voltage was exported from the DC/DC boost converter to the DC/DC buck converter, so that the voltage dropped to proper voltage for charging the battery. The charging system uses constant current/constant voltage (CC/CV) method to charge the lithium battery. In order to obtain the optimum PI charge controller parameters, this study used intelligent algorithm to determine the optimum parameters. According to the simulation and experimental results, the control parameters resulted from PSO have better performance than genetic algorithms (GAs). PMID:23766713

PSO based PI controller design for a solar charger system.

PubMed

Yau, Her-Terng; Lin, Chih-Jer; Liang, Qin-Cheng

2013-01-01

Due to global energy crisis and severe environmental pollution, the photovoltaic (PV) system has become one of the most important renewable energy sources. Many previous studies on solar charger integrated system only focus on load charge control or switching Maximum Power Point Tracking (MPPT) and charge control modes. This study used two-stage system, which allows the overall portable solar energy charging system to implement MPPT and optimal charge control of Li-ion battery simultaneously. First, this study designs a DC/DC boost converter of solar power generation, which uses variable step size incremental conductance method (VSINC) to enable the solar cell to track the maximum power point at any time. The voltage was exported from the DC/DC boost converter to the DC/DC buck converter, so that the voltage dropped to proper voltage for charging the battery. The charging system uses constant current/constant voltage (CC/CV) method to charge the lithium battery. In order to obtain the optimum PI charge controller parameters, this study used intelligent algorithm to determine the optimum parameters. According to the simulation and experimental results, the control parameters resulted from PSO have better performance than genetic algorithms (GAs).

Computer acquired performance data from a chemically vapor-deposited-rhenium, niobium planar diode

NASA Technical Reports Server (NTRS)

Manista, E. J.; Morris, J. F.; Smith, A. L.; Lancashire, R. B.

1973-01-01

Performance data from a chemically vapor-deposited-rhenium, niobium thermionic converter are presented. The planar converter has a guard-ringed collector and a nominal fixed spacing of 0.25 mm (10 mils). The data were obtained by using a computerized acquisition system and are available on request to one of the authors on microfiche as individual and composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E collector T sub C, and cesium reservoir T sub R. The composite plots have constant T sub E and varying T sub C or T sub R, or both. Current, voltage envelopes having constant T sub E with and without fixed T sub C appear in the present report. The diode was tested at increments between 1600 and 2000 K for the emitter Hohlraum, 800 to 1100 K for the collector, and 540 and 650 K for the reservoir. A total of 312 current, voltage curves were obtained in the present performance evaluation. Current, voltage envelopes from three rhenium emitter converters evaluated in the present program are also given. The data are compared at commom emitter Hohlraum temperatures.

Galvanic Cells and the Determination of Equilibrium Constants

ERIC Educational Resources Information Center

Brosmer, Jonathan L.; Peters, Dennis G.

2012-01-01

Readily assembled mini-galvanic cells can be employed to compare their observed voltages with those predicted from the Nernst equation and to determine solubility products for silver halides and overall formation constants for metal-ammonia complexes. Results obtained by students in both an honors-level first-year course in general chemistry and…

Development of a tester for evaluation of prototype thermal cells and batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guidotti, R.A.

1994-10-01

A tester was developed to evaluate prototype thermal cells and batteries--especially high-voltage units--under a wide range of constant-current and constant-resistance discharge conditions. Programming of the steady-state and pulsing conditions was by software control or by hardware control via an external pulse generator. The tester was assembled from primarily Hewlett-Packard (H-P) instrumentation and was operated under H-P`s Rocky Mountain Basic (RMB). Constant-current electronic loads rated up to 4 kW (400 V at up to 100 A) were successfully used with the setup. For testing under constant-resistance conditions, power metal-oxide field-effect transistors (MOSFETs) controlled by a programmable pulse generator were used tomore » switch between steady-state and pulse loads. The pulses were digitized at up to a 50 kHz rate (20 {mu} s/pt) using high-speed DVMs; steady-state voltages were monitored with standard DVMs. This paper describes several of the test configurations used and discusses the limitations of each. Representative data are presented for a number of the test conditions.« less

Constant Switching Frequency DTC for Matrix Converter Fed Speed Sensorless Induction Motor Drive

NASA Astrophysics Data System (ADS)

Mir, Tabish Nazir; Singh, Bhim; Bhat, Abdul Hamid

2018-05-01

The paper presents a constant switching frequency scheme for speed sensorless Direct Torque Control (DTC) of Matrix Converter fed Induction Motor Drive. The use of matrix converter facilitates improved power quality on input as well as motor side, along with Input Power Factor control, besides eliminating the need for heavy passive elements. Moreover, DTC through Space Vector Modulation helps in achieving a fast control over the torque and flux of the motor, with added benefit of constant switching frequency. A constant switching frequency aids in maintaining desired power quality of AC mains current even at low motor speeds, and simplifies input filter design of the matrix converter, as compared to conventional hysteresis based DTC. Further, stator voltage estimation from sensed input voltage, and subsequent stator (and rotor) flux estimation is done. For speed sensorless operation, a Model Reference Adaptive System is used, which emulates the speed dependent rotor flux equations of the induction motor. The error between conventionally estimated rotor flux (reference model) and the rotor flux estimated through the adaptive observer is processed through PI controller to generate the rotor speed estimate.

Estimating the effects of harmonic voltage fluctuations on the temperature rise of squirrel-cage motors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emanuel, A.E.

1991-03-01

This article presents a preliminary analysis of the effect of randomly varying harmonic voltages on the temperature rise of squirrel-cage motors. The stochastic process of random variations of harmonic voltages is defined by means of simple statistics (mean, standard deviation, type of distribution). Computational models based on a first-order approximation of the motor losses and on the Monte Carlo method yield results which prove that equipment with large thermal time-constant is capable of withstanding for a short period of time larger distortions than THD = 5%.

Deposition of hard and adherent diamond-like carbon films inside steel tubes using a pulsed-DC discharge.

PubMed

Trava-Airoldi, Vladimir Jesus; Capote, Gil; Bonetti, Luís Francisco; Fernandes, Jesum; Blando, Eduardo; Hübler, Roberto; Radi, Polyana Alves; Santos, Lúcia Vieira; Corat, Evaldo José

2009-06-01

A new, low cost, pulsed-DC plasma-enhanced chemical vapor deposition system that uses a bipolar, pulsed power supply was designed and tested to evaluate its capacity to produce quality diamond-like carbon films on the inner surface of steel tubes. The main focus of the study was to attain films with low friction coefficients, low total stress, a high degree of hardness, and very good adherence to the inner surface of long metallic tubes at a reasonable growth rate. In order to enhance the diamond-like carbon coating adhesion to metallic surfaces, four steps were used: (1) argon ion sputtering; (2) plasma nitriding; (3) a thin amorphous silicon interlayer deposition, using silane as the precursor gas; and (4) diamond-like carbon film deposition using methane atmosphere. This paper presents various test results as functions of the methane gas pressure and of the coaxial metal anode diameter, where the pulsed-DC voltage constant is kept constant. The influence of the coaxial metal anode diameter and of the methane gas pressure is also demonstrated. The results obtained showed the possibilities of using these DLC coatings for reduced friction and to harden inner surface of the steel tubes.

A new fast-cycling system for AMS at ANU

NASA Astrophysics Data System (ADS)

De Cesare, M.; Fifield, L. K.; Weisser, D. C.; Tsifakis, D.; Cooper, A.; Lobanov, N. R.; Tunningley, T. B.; Tims, S. G.; Wallner, A.

2015-10-01

In order to perform higher precision measurements, an upgrade of the ANU accelerator is underway. Fast switching times on the low-energy side, with maximum settling times of 30 ms, are achieved by holding the injector magnet field constant while changing the energy of the different isotopes by changing the pre-acceleration voltage after the ion source. Because ions of the different isotopes then have different energies before injection, it is necessary to adjust the strength and steering of the electrostatic quadrupole lens that focusses the beam before entry into the accelerator. First tests of the low-energy system will be reported. At the high energy end, a larger vacuum box in the analyzing magnet has been designed, manufactured and installed to allow the transport of differences in mass as large as 10% at constant terminal voltage. For the cases where more than one isotope must be transported to the detector an additional refinement is necessary. If the accelerator voltage is to be kept constant, then the trajectories of the different isotopes around both the analyzing and switching magnets must be modified. This will be achieved using bounced electrostatic steerers before and after the magnets. Simulations have been performed with the ion optic code COSY Infinity to determine the optimal positions and sizes of these steerers.

Advanced Bode Plot Techniques for Ultrasonic Transducers

NASA Astrophysics Data System (ADS)

DeAngelis, D. A.; Schulze, G. W.

The Bode plot, displayed as either impedance or admittance versus frequency, is the most basic test used by ultrasonic transducer designers. With simplicity and ease-of-use, Bode plots are ideal for baseline comparisons such as spacing of parasitic modes or impedance, but quite often the subtleties that manifest as poor process control are hard to interpret or are nonexistence. In-process testing of transducers is time consuming for quantifying statistical aberrations, and assessments made indirectly via the workpiece are difficult. This research investigates the use of advanced Bode plot techniques to compare ultrasonic transducers with known "good" and known "bad" process performance, with the goal of a-priori process assessment. These advanced techniques expand from the basic constant voltage versus frequency sweep to include constant current and constant velocity interrogated locally on transducer or tool; they also include up and down directional frequency sweeps to quantify hysteresis effects like jumping and dropping phenomena. The investigation focuses solely on the common PZT8 piezoelectric material used with welding transducers for semiconductor wire bonding. Several metrics are investigated such as impedance, displacement/current gain, velocity/current gain, displacement/voltage gain and velocity/voltage gain. The experimental and theoretical research methods include Bode plots, admittance loops, laser vibrometry and coupled-field finite element analysis.

Controllable transition from positive space charge to negative space charge in an inverted cylindrical magnetron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rane, R., E-mail: ramu@ipr.res.in; Ranjan, M.; Mukherjee, S.

2016-01-15

The combined effect of magnetic field (B), gas pressure (P), and the corresponding discharge voltage on the discharge properties of argon in inverted cylindrical magnetron has been investigated. In the experiment, anode is biased with continuous 10 ms sinusoidal half wave. It is observed that at a comparatively higher magnetic field (i.e., >200 gauss) and lower operating pressure (i.e., <1 × 10{sup −3} mbar), the discharge extinguishes and demands a high voltage to reignite. Discharge current increases with increase in magnetic field and starts reducing at sufficiently higher magnetic field for a particular discharge voltage due to restricted electron diffusion towards the anode.more » It is observed that B/P ratio plays an important role in sustaining the discharge and is constant for a discharge voltage. The discharge is transformed to negative space charge regime from positive space charge regime at certain B/P ratio and this ratio varies linearly with the discharge voltage. The space charge reversal is indicated by the radial profile of the floating potential and plasma potential in between two electrodes for different magnetic fields. At a particular higher magnetic field (beyond 100 gauss), the floating potential increases gradually with the radial distance from cathode, whereas it remains almost constant at lower magnetic field.« less

Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

2017-10-01

Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

The protein kinase C inhibitor, bisindolylmaleimide (I), inhibits voltage-dependent K+ channels in coronary arterial smooth muscle cells.

PubMed

Park, Won Sun; Son, Youn Kyoung; Ko, Eun A; Ko, Jae-Hong; Lee, Hyang Ae; Park, Kyoung Sun; Earm, Yung E

2005-06-17

We examined the effects of the protein kinase C (PKC) inhibitor, bisindolylmaleimide (BIM) (I), on voltage-dependent K+ (K(V)) channels in rabbit coronary arterial smooth muscle cells using whole-cell patch clamp technique. BIM (I) reversibly and dose-dependently inhibited the K(V) currents with an apparent Kd value of 0.27 microM. The inhibition of the K(V) current by BIM (I) was highly voltage-dependent between -30 and +10 mV (voltage range of channel activation), and the additive inhibition of the K(V) current by BIM (I) was voltage-dependence in the full activation voltage range. The rate constants of association and dissociation for BIM (I) were 18.4 microM(-1) s(-1) and 4.7 s(-1), respectively. BIM (I) had no effect on the steady-state activation and inactivation of K(V) channels. BIM (I) caused use-dependent inhibition of K(V) current, which was consistent with the slow recovery from inactivation in the presence of BIM (I) (recovery time constants were 856.95 +/- 282.6 ms for control, and 1806.38 +/- 110.0 ms for 300 nM BIM (I)). ATP-sensitive K+ (K(ATP)), inward rectifier K+ (K(IR)), Ca2+-activated K+ (BK(Ca)) channels, which regulate the membrane potential and arterial tone, were not affected by BIM (I). The PKC inhibitor, chelerythrine, and protein kinase A (PKA) inhibitor, PKA-IP, had little effect on the K(V) current and did not significantly alter the inhibitory effects of BIM (I) on the K(V) current. These results suggest that BIM (I) inhibits K(V) channels in a phosphorylation-independent, and voltage-, time- and use-dependent manner.

Parameter estimation of extended free-burning electric arc within 1 kA

NASA Astrophysics Data System (ADS)

Sun, Qiuqin; Liu, Hao; Wang, Feng; Chen, She; Zhai, Yujia

2018-05-01

A long electric arc, as a common phenomenon in the power system, not only damages the electrical equipment but also threatens the safety of the system. In this work, a series of tests on a long electric arc in free air have been conducted. The arc voltage and current data were obtained, and the arc trajectories were captured using a high speed camera. The arc images were digitally processed by means of edge detection, and the length is formulated and achieved. Based on the experimental data, the characteristics of the long arc are discussed. It shows that the arc voltage waveform is close to the square wave with high-frequency components, whereas the current is almost sinusoidal. As the arc length elongates, the arc voltage and the resistance increase sharply. The arc takes a spiral shape with the effect of magnetic forces. The arc length will shorten briefly with the occurrence of the short-circuit phenomenon. Based on the classical Mayr model, the parameters of the long electric arc, including voltage gradient and time constant, with different lengths and current amplitudes are estimated using the linear least-square method. To reduce the computational error, segmentation interpolation is also employed. The results show that the voltage gradient of the long arc is mainly determined by the current amplitude but almost independent of the arc length. However, the time constant is jointly governed by these two variables. The voltage gradient of the arc with the current amplitude at 200-800 A is in the range of 3.9 V/cm-20 V/cm, and the voltage gradient decreases with the increase in current.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bean, Bruce Palmer

The effects of ether and halothane on membrane currents in the voltage clamped crayfish giant axon membrane were investigated. Concentrations of ether up to 300 mM and of halothane up to 32 mM had no effect on resting potential or leakage conductance. Ether and halothane reduced the size of sodium currents without changing the voltage dependence of the peak currents or their reversal potential. Ether and halothane also produced a reversible, dose-dependent speeding of sodium current decay at all membrane potentials. Ether reduced the time constants for inactivation, and also shifted the midpoint of the steady-state inactivation curve in themore » hyperpolarizing direction. Potassium currents were smaller with ether present, with no change in the voltage dependence of steady-state currents. The activation of potassium channels was faster with ether present. There was no apparent change in the capacitance of the crayfish giant axon membrane with ether concentrations of up to 100 mM. Experiments on sodium channel inactivation kinetics were performed using 4-aminopyridine to block potassium currents. Sodium currents decayed with a time course generally fit well by a single exponential. The time constant of decay was a steep function of voltage, especially in the negative resistance region of the peak current vs voltage relation.The time course of inactivation was very similar to that of the decay of the current at the same potential. The measurement of steady-state inactivation curves with different test pulses showed no shifts along the voltage asix. The voltage-dependence of the integral of sodium conductance was measured to test models of sodium channel inactivation in which channels must open before inactivating; the results appear inconsistent with some of the simplest cases of such models.« less

On the Relativistic Correction of Particles Trajectory in Tandem Type Electrostatic Accelerator

NASA Astrophysics Data System (ADS)

Minárik, Stanislav

2015-08-01

A constant potential is applied to the acceleration of the ion-beam in the tandem type electrostatic accelerator. However, not just one voltage is applied, but instead a number of applications can be made in succession by means of the tandem arrangement of high voltage tubes. This number of voltage applications, which is the number of so-called "stages" of a tandem accelerator, may be two, three, or four, depending on the chosen design. Electrostatic field with approximately constant intensity acts on ions in any stage. In general, non-relativistic dynamics is used for the description of the ion transport in tandem accelerator. Energies of accelerated ions are too low and relativistic effects cannot be commonly observed by standard experimental technique. Estimation of possible relativistic correction of ion trajectories is therefore only a matter of calculation. In this note, we briefly present such calculation. Our aim is to show how using the relativistic dynamics modifies the particles trajectory in tandem type accelerator and what parameters determine this modification.

Analysis of pre-flight modulator voltage calibration data for the Voyager plasma science experiment

NASA Technical Reports Server (NTRS)

Nastov, Ognen

1988-01-01

The Voyager Plasma Science (PLS) modulator calibration (MVM) data analysis was undertaken in order to check the correctness of the fast A/D converter formulas that connect low voltage monitor signals (MV) with digital outputs (DN), to determine the proportionality constants between the actual modulator grid potential (V) and the monitor voltage (MV), and to establish an algorithm to link the digitized readouts (DN) with the actual grid potential (V). The analysis results are surprising in that the derived conversion constants deviate by fairly significant amounts from their nominal values. However, it must be kept in mind that the test results which were used for analysis may be very imprecise. Even if it is assumed that the test result errors are very large, they do no appear to be capable to account for all discrepancies between the theoretical expectations and the results of the analysis. Measurements with the flight spare instrument appear to be the only means of investigating these effects further.

A Constant Energy-Per-Cycle Ring Oscillator Over a Wide Frequency Range for Wireless Sensor Nodes

PubMed Central

Lee, Inhee; Sylvester, Dennis; Blaauw, David

2016-01-01

This paper presents an energy-efficient oscillator for wireless sensor nodes (WSNs). It avoids short-circuit current by minimizing the time spent in the input voltage range from Vthn to [Vdd − |Vthp|]. A current-feeding scheme with gate voltage control enables the oscillator to operate over a wide frequency range. A test chip is fabricated in a 0.18 μm CMOS process. The measurements show that the proposed oscillator achieves a constant energy-per-cycle (EpC) of 0.8 pJ/cycle over the 21–60 MHz frequency range and is more efficient than a conventional current-starved ring oscillator (CSRO) below 300 kHz at 1.8 V supply voltage. As an application example, the proposed oscillator is implemented in a switched-capacitor DC–DC converter. The converter is 11%–56% more efficient for load power values ranging from 583 pW to 2.9 nW than a converter using a conventional CSRO. PMID:27546899

A Constant Energy-Per-Cycle Ring Oscillator Over a Wide Frequency Range for Wireless Sensor Nodes.

PubMed

Lee, Inhee; Sylvester, Dennis; Blaauw, David

2016-03-01

This paper presents an energy-efficient oscillator for wireless sensor nodes (WSNs). It avoids short-circuit current by minimizing the time spent in the input voltage range from V thn to [ V dd - | V thp |]. A current-feeding scheme with gate voltage control enables the oscillator to operate over a wide frequency range. A test chip is fabricated in a 0.18 μm CMOS process. The measurements show that the proposed oscillator achieves a constant energy-per-cycle (EpC) of 0.8 pJ/cycle over the 21-60 MHz frequency range and is more efficient than a conventional current-starved ring oscillator (CSRO) below 300 kHz at 1.8 V supply voltage. As an application example, the proposed oscillator is implemented in a switched-capacitor DC-DC converter. The converter is 11%-56% more efficient for load power values ranging from 583 pW to 2.9 nW than a converter using a conventional CSRO.

Flow-through electroporation based on constant voltage for large-volume transfection of cells.

PubMed

Geng, Tao; Zhan, Yihong; Wang, Hsiang-Yu; Witting, Scott R; Cornetta, Kenneth G; Lu, Chang

2010-05-21

Genetic modification of cells is a critical step involved in many cell therapy and gene therapy protocols. In these applications, cell samples of large volume (10(8)-10(9)cells) are often processed for transfection. This poses new challenges for current transfection methods and practices. Here we present a novel flow-through electroporation method for delivery of genes into cells at high flow rates (up to approximately 20 mL/min) based on disposable microfluidic chips, a syringe pump, and a low-cost direct current (DC) power supply that provides a constant voltage. By eliminating pulse generators used in conventional electroporation, we dramatically lowered the cost of the apparatus and improved the stability and consistency of the electroporation field for long-time operation. We tested the delivery of pEFGP-C1 plasmids encoding enhanced green fluorescent protein into Chinese hamster ovary (CHO-K1) cells in the devices of various dimensions and geometries. Cells were mixed with plasmids and then flowed through a fluidic channel continuously while a constant voltage was established across the device. Together with the applied voltage, the geometry and dimensions of the fluidic channel determined the electrical parameters of the electroporation. With the optimal design, approximately 75% of the viable CHO cells were transfected after the procedure. We also generalize the guidelines for scaling up these flow-through electroporation devices. We envision that this technique will serve as a generic and low-cost tool for a variety of clinical applications requiring large volume of transfected cells. Copyright 2010 Elsevier B.V. All rights reserved.

Study on Control Scheme for the Inverters in Low Voltage Microgrid with Nonlinear Loads

NASA Astrophysics Data System (ADS)

Xu, Jiqiang; Lu, Wenzhou; Wu, Lei

2017-05-01

There are a lot of nonlinear loads in real low voltage microgrid system. It will cause serious output voltage and grid current harmonic distortions problems in island and grid-connected modes, respectively. To solve this problem, this paper proposes a droop control scheme with quasi-proportion and resonant (quasi-PR) controller based on αβ stationary reference frame to make microgrid smoothly switch between grid-connected and island modes without changing control method. Moreover, in island mode, not only stable output voltage and frequency, but also reduced output voltage harmonics with added nonlinear loads can be achieved; In grid-connected mode, not only constant power, but also reduced grid current harmonics can be achieved. Simulation results verify the effectiveness of the proposed control scheme.

Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates

NASA Astrophysics Data System (ADS)

Lin, Zhiting; Wang, Haiyan; Lin, Yunhao; Wang, Wenliang; Li, Guoqiang

2017-11-01

High-performance blue GaN-based light-emitting diodes (LEDs) on Si substrates have been achieved by applying a suitable tensile stress in the underlying n-GaN. It is demonstrated by simulation that tensile stress in the underlying n-GaN alleviates the negative effect from polarization electric fields on multiple quantum wells but an excessively large tensile stress severely bends the band profile of the electron blocking layer, resulting in carrier loss and large electric resistance. A medium level of tensile stress, which ranges from 4 to 5 GPa, can maximally improve the luminous intensity and decrease forward voltage of LEDs on Si substrates. The LED with the optimal tensile stress shows the largest simulated luminous intensity and the smallest simulated voltage at 35 A/cm2. Compared to the LEDs with a compressive stress of -3 GPa and a large tensile stress of 8 GPa, the improvement of luminous intensity can reach 102% and 28.34%, respectively. Subsequent experimental results provide evidence of the superiority of applying tensile stress in n-GaN. The experimental light output power of the LEDs with a tensile stress of 1.03 GPa is 528 mW, achieving a significant improvement of 19.4% at 35 A/cm2 in comparison to the reference LED with a compressive stress of -0.63 GPa. The forward voltage of this LED is 3.08 V, which is smaller than 3.11 V for the reference LED. This methodology of stress management on underlying GaN-based epitaxial films shows a bright feature for achieving high-performance LED devices on Si substrates.

Comparison of Measured and Calculated Stresses in Built-up Beams

NASA Technical Reports Server (NTRS)

Levin, L Ross; Nelson, David H

1946-01-01

Web stresses and flange stresses were measured in three built-up beams: one of constant depth with flanges of constant cross-section, one linearly tapered in depth with flanges of constant cross section, and one linearly tapered in depth with tapered flanges. The measured stresses were compared with the calculated stresses obtained by the methods outlined in order to determine the degree of accuracy that may be expected from the stress analysis formulas. These comparisons indicated that the average measured stresses for all points in the central section of the beams did not exceed the average calculated stresses by more than 5 percent. It also indicated that the difference between average measured flange stresses and average calculated flange stresses on the net area and a fully effective web did not exceed 6.1 percent.

Absolute Determination of High DC Voltages by Means of Frequency Measurement

NASA Astrophysics Data System (ADS)

Peier, Dirk; Schulz, Bernd

1983-01-01

A novel absolute measuring procedure is presented for the definition of fixed points of the voltage in the 100 kV range. The method is based on transit time measurements with accelerated electrons. By utilizing the selective interaction of a monoenergetic electron beam with the electromagnetic field of a special cavity resonator, the voltage is referred to fundamental constants and the base unit second. Possible balance voltages are indicated by a current detector. Experimental investigations are carried out with resonators in the normal conducting range. With a copper resonator operating at the temperature of boiling nitrogen (77 K), the relative uncertainty of the voltage points is estimated to be +/- 4 × 10-4. The technically realizable uncertainty can be reduced to +/- 1 × 10-5 by the proposed application of a superconducting niobium resonator. Thus this measuring device becomes suitable as a primary standard for the high-voltage range.

Load insensitive electrical device. [power converters for supplying direct current at one voltage from a source at another voltage

NASA Technical Reports Server (NTRS)

Schwarz, F. C. (Inventor)

1974-01-01

A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

Reactive power and voltage control strategy based on dynamic and adaptive segment for DG inverter

NASA Astrophysics Data System (ADS)

Zhai, Jianwei; Lin, Xiaoming; Zhang, Yongjun

2018-03-01

The inverter of distributed generation (DG) can support reactive power to help solve the problem of out-of-limit voltage in active distribution network (ADN). Therefore, a reactive voltage control strategy based on dynamic and adaptive segment for DG inverter is put forward to actively control voltage in this paper. The proposed strategy adjusts the segmented voltage threshold of Q(U) droop curve dynamically and adaptively according to the voltage of grid-connected point and the power direction of adjacent downstream line. And then the reactive power reference of DG inverter can be got through modified Q(U) control strategy. The reactive power of inverter is controlled to trace the reference value. The proposed control strategy can not only control the local voltage of grid-connected point but also help to maintain voltage within qualified range considering the terminal voltage of distribution feeder and the reactive support for adjacent downstream DG. The scheme using the proposed strategy is compared with the scheme without the reactive support of DG inverter and the scheme using the Q(U) control strategy with constant segmented voltage threshold. The simulation results suggest that the proposed method has a significant improvement on solving the problem of out-of-limit voltage, restraining voltage variation and improving voltage quality.

Evolution of permeability and Biot coefficient at high mean stresses in high porosity sandstone

DOE PAGES

Ingraham, Mathew D.; Bauer, Stephen J.; Issen, Kathleen A.; ...

2017-05-01

A series of constant mean stress (CMS) and constant shear stress (CSS) tests were performed to investigate the evolution of permeability and Biot coefficient at high mean stresses in a high porosity reservoir analog (Castlegate sandstone). Permeability decreases as expected with increasing mean stress, from about 20 Darcy at the beginning of the tests to between 1.5 and 0.3 Darcy at the end of the tests (mean stresses up to 275 MPa). The application of shear stress causes permeability to drop below that of a hydrostatic test at the same mean stress. Results show a nearly constant rate decrease inmore » the Biot coefficient as the mean stress increases during hydrostatic loading, and as the shear stress increases during CMS loading. In conclusion, CSS tests show a stabilization of the Biot coefficient after the application of shear stress.« less

Evolution of permeability and Biot coefficient at high mean stresses in high porosity sandstone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ingraham, Mathew D.; Bauer, Stephen J.; Issen, Kathleen A.

A series of constant mean stress (CMS) and constant shear stress (CSS) tests were performed to investigate the evolution of permeability and Biot coefficient at high mean stresses in a high porosity reservoir analog (Castlegate sandstone). Permeability decreases as expected with increasing mean stress, from about 20 Darcy at the beginning of the tests to between 1.5 and 0.3 Darcy at the end of the tests (mean stresses up to 275 MPa). The application of shear stress causes permeability to drop below that of a hydrostatic test at the same mean stress. Results show a nearly constant rate decrease inmore » the Biot coefficient as the mean stress increases during hydrostatic loading, and as the shear stress increases during CMS loading. In conclusion, CSS tests show a stabilization of the Biot coefficient after the application of shear stress.« less

Stability study of solution-processed zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Zhang, Xue; Ndabakuranye, Jean Pierre; Kim, Dong Wook; Choi, Jong Sun; Park, Jaehoon

2015-11-01

In this study, the environmental dependence of the electrical stability of solution-processed n-channel zinc tin oxide (ZTO) thin-film transistors (TFTs) is reported. Under a prolonged negative gate bias stress, a negative shift in threshold voltage occurs in atmospheric air, whereas a negligible positive shift in threshold voltage occurs under vacuum. In the positive bias-stress experiments, a positive shift in threshold voltage was invariably observed both in atmospheric air and under vacuum. In this study, the negative gate-bias-stress-induced instability in atmospheric air is explained through an internal potential in the ZTO semiconductor, which can be generated owing to the interplay between H2O molecules and majority carrier electrons at the surface of the ZTO film. The positive bias-stress-induced instability is ascribed to electron-trapping phenomenon in and around the TFT channel region, which can be further augmented in the presence of air O2 molecules. These results suggest that the interaction between majority carriers and air molecules will have crucial implications for a reliable operation of solution-processed ZTO TFTs. [Figure not available: see fulltext.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, Ka-Ngo

1996-01-01

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Analyses of Fatigue Crack Growth and Closure Near Threshold Conditions for Large-Crack Behavior

NASA Technical Reports Server (NTRS)

Newman, J. C., Jr.

1999-01-01

A plasticity-induced crack-closure model was used to study fatigue crack growth and closure in thin 2024-T3 aluminum alloy under constant-R and constant-K(sub max) threshold testing procedures. Two methods of calculating crack-opening stresses were compared. One method was based on a contact-K analyses and the other on crack-opening-displacement (COD) analyses. These methods gave nearly identical results under constant-amplitude loading, but under threshold simulations the contact-K analyses gave lower opening stresses than the contact COD method. Crack-growth predictions tend to support the use of contact-K analyses. Crack-growth simulations showed that remote closure can cause a rapid rise in opening stresses in the near threshold regime for low-constraint and high applied stress levels. Under low applied stress levels and high constraint, a rise in opening stresses was not observed near threshold conditions. But crack-tip-opening displacement (CTOD) were of the order of measured oxide thicknesses in the 2024 alloy under constant-R simulations. In contrast, under constant-K(sub max) testing the CTOD near threshold conditions were an order-of-magnitude larger than measured oxide thicknesses. Residual-plastic deformations under both constant-R and constant-K(sub max) threshold simulations were several times larger than the expected oxide thicknesses. Thus, residual-plastic deformations, in addition to oxide and roughness, play an integral part in threshold development.

Components of gating charge movement and S4 voltage-sensor exposure during activation of hERG channels.

PubMed

Wang, Zhuren; Dou, Ying; Goodchild, Samuel J; Es-Salah-Lamoureux, Zeineb; Fedida, David

2013-04-01

The human ether-á-go-go-related gene (hERG) K(+) channel encodes the pore-forming α subunit of the rapid delayed rectifier current, IKr, and has unique activation gating kinetics, in that the α subunit of the channel activates and deactivates very slowly, which focuses the role of IKr current to a critical period during action potential repolarization in the heart. Despite its physiological importance, fundamental mechanistic properties of hERG channel activation gating remain unclear, including how voltage-sensor movement rate limits pore opening. Here, we study this directly by recording voltage-sensor domain currents in mammalian cells for the first time and measuring the rates of voltage-sensor modification by [2-(trimethylammonium)ethyl] methanethiosulfonate chloride (MTSET). Gating currents recorded from hERG channels expressed in mammalian tsA201 cells using low resistance pipettes show two charge systems, defined as Q(1) and Q(2), with V(1/2)'s of -55.7 (equivalent charge, z = 1.60) and -54.2 mV (z = 1.30), respectively, with the Q(2) charge system carrying approximately two thirds of the overall gating charge. The time constants for charge movement at 0 mV were 2.5 and 36.2 ms for Q(1) and Q(2), decreasing to 4.3 ms for Q(2) at +60 mV, an order of magnitude faster than the time constants of ionic current appearance at these potentials. The voltage and time dependence of Q2 movement closely correlated with the rate of MTSET modification of I521C in the outermost region of the S4 segment, which had a V(1/2) of -64 mV and time constants of 36 ± 8.5 ms and 11.6 ± 6.3 ms at 0 and +60 mV, respectively. Modeling of Q(1) and Q(2) charge systems showed that a minimal scheme of three transitions is sufficient to account for the experimental findings. These data point to activation steps further downstream of voltage-sensor movement that provide the major delays to pore opening in hERG channels.

A novel electro-driven membrane for removal of chromium ions using polymer inclusion membrane under constant D.C. electric current.

PubMed

Kaya, Ahmet; Onac, Canan; Alpoguz, H Korkmaz

2016-11-05

In this study, the use of polymer inclusion membrane under constant electric current for the removal of Cr(VI) from water has investigated for the first time. Transport of Cr(VI) is performed by an electric current from the donor phase to the acceptor phase with a constant electric current of 0.5A. The optimized membrane includes of 12.1% 2-nitrophenyl octyl ether (2-NPOE), 77.6% cellulose triacetate (CTA), 10.3% tricapryl-methylammonium chloride (Aliquat 336) as a carrier. We tested the applicability of the selected membrane for Cr(VI) removal in real environmental water samples and evaluated its reusability. Electro membrane experiments were carried out under various parameters, such as the effect of electro membrane voltage at constant DC electric current; electro membrane current at constant voltage, acceptor phase pH, and stable electro membrane; and a comparison of polymer inclusion membrane and electro membrane transport studies. The Cr(VI) transport was achieved 98.33% after 40min under optimized conditions. An alternative method has been employed that eliminates the changing of electrical current by the application of constant electric current for higher reproducibility of electro membrane extraction experiments by combining the excellent selective and long-term use features of polymer inclusion membrane. Copyright © 2016 Elsevier B.V. All rights reserved.

A soft switching with reduced voltage stress ZVT-PWM full-bridge converter

NASA Astrophysics Data System (ADS)

Sahin, Yakup; Ting, Naim Suleyman; Acar, Fatih

2018-04-01

This paper introduces a novel active snubber cell for soft switching pulse width modulation DC-DC converters. In the proposed converter, the main switch is turned on under zero voltage transition and turned off under zero voltage switching (ZVS). The auxiliary switch is turned on under zero current switching (ZCS) and turned off under zero current transition. The main diode is turned on under ZVS and turned off under ZCS. All of the other semiconductors in the converter are turned on and off with soft switching. There is no extra voltage stress on the semiconductor devices. Besides, the proposed converter has simple structure and ease of control due to common ground. The detailed theoretical analysis of the proposed converter is presented and also verified with both simulation and experimental study at 100 kHz switching frequency and 600 W output power. Furthermore, the efficiency of the proposed converter is 95.7% at nominal power.

Initial Investigation of a Novel Thermal Storage Concept as Part of a Renewable Energy System

DTIC Science & Technology

2013-06-01

stress (pascal) z-component of shear stress (pascal) Fslip constant Esl ip constant surface tension gradient (n/m-k) specularity coefficient...Axis x-component of ¥-Component of z- component of x -component of v-component of z-component of Fs l ip constant Esl i p constant Rotation

Establishment of a PID Pass/Fail Test for Crystalline Silicon Modules by Examining Field Performance for Five Years: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, Peter L

In an experiment with five module designs and multiple replicas, it is found that crystalline silicon cell modules that can pass a criterion of less than 5 percent power degradation in stress test conditions of 60 degrees Celsius, 85 percent relative humidity (RH), 96 h, and nameplate-rated system voltage bias show no power degradation by potential induced degradation in the range of 4-6 years duration in the Florida, USA environment. This data suggests that this chamber stress level is useful as a pass/fail criterion for PID, and will help ensure against degradation by system voltage stress in Florida, or lessmore » stressful climates, for at least 5 years.« less

Polarization and Fowler-Nordheim tunneling in anodized Al-Al2O3-Au diodes

NASA Astrophysics Data System (ADS)

Hickmott, T. W.

2000-06-01

Polarization in anodic Al2O3 films is measured by using quasi-dc current-voltage (I-V) curves of Al-Al2O3-Au diodes. A reproducible polarization state is established by applying a negative voltage to the Au electrode of a rectifying Al-Al2O3-Au diode. The difference between subsequent I-V curves with Au positive is a measure of polarization in the sample. The magnitude of polarization charge in Al2O3 depends on the anodizing electrolyte. Al2O3 films formed in H2O-based electrolytes have approximately ten times the polarization charge of Al2O3 films formed in ethylene glycol-based electrolyte. Anodizing conditions that produce greater polarizing charge in anodic Al2O3 result in voltage-time curves during anodization under galvanostatic conditions that are nonlinear. Anodic films with greater polarizing charge also have a greater apparent interface capacitance which is independent of Al2O3 thickness. I-V curves of Al-Al2O3-Au diodes for increasing voltage are dominated by polarization. I-V curves for decreasing voltage are reproducible and parallel but depend on the maximum current and voltage reached during the measurement. There is no single current corresponding to a given voltage. I-V curves for decreasing voltage are analyzed assuming that the conduction mechanism is Fowler-Nordheim (FN) tunneling. There is a qualitative difference between the FN tunneling parameters for Al2O3 films formed in H2O-based electrolytes and those formed in ethylene glycol-based electrolyte. For the former the value of the exponential term in the FN analysis increases as the value of maximum voltage and current in an I-V characteristic increases, while the value of the pre-exponential term is nearly constant. For the latter, the exponential term is nearly constant as maximum voltage and current increase, but the pre-exponential term decreases by about 5 decades. Thus polarization charge incorporated during formation of anodized Al2O3 strongly affects the formation of the insulating film, the stability of the films under bias, and their conduction characteristics.

Giant voltage-induced deformation of a dielectric elastomer under a constant pressure

NASA Astrophysics Data System (ADS)

Godaba, Hareesh; Foo, Choon Chiang; Zhang, Zhi Qian; Khoo, Boo Cheong; Zhu, Jian

2014-09-01

Dielectric elastomer actuators coupled with liquid have recently been developed as soft pumps, soft lenses, Braille displays, etc. In this paper, we investigate the performance of a dielectric elastomer actuator, which is coupled with water. The experiments demonstrate that the membrane of a dielectric elastomer can achieve a giant voltage-induced area strain of 1165%, when subject to a constant pressure. Both theory and experiment show that the pressure plays an important role in determining the electromechanical behaviour. The experiments also suggest that the dielectric elastomer actuators, when coupled with liquid, may suffer mechanical instability and collapse after a large amount of liquid is enclosed by the membrane. This failure mode needs to be taken into account in designing soft actuators.

Gating kinetics of batrachotoxin-modified Na+ channels in the squid giant axon. Voltage and temperature effects.

PubMed Central

Correa, A M; Bezanilla, F; Latorre, R

1992-01-01

The gating kinetics of batrachotoxin-modified Na+ channels were studied in outside-out patches of axolemma from the squid giant axon by means of the cut-open axon technique. Single channel kinetics were characterized at different membrane voltages and temperatures. The probability of channel opening (Po) as a function of voltage was well described by a Boltzmann distribution with an equivalent number of gating particles of 3.58. The voltage at which the channel was open 50% of the time was a function of [Na+] and temperature. A decrease in the internal [Na+] induced a shift to the right of the Po vs. V curve, suggesting the presence of an integral negative fixed charge near the activation gate. An increase in temperature decreased Po, indicating a stabilization of the closed configuration of the channel and also a decrease in entropy upon channel opening. Probability density analysis of dwell times in the closed and open states of the channel at 0 degrees C revealed the presence of three closed and three open states. The slowest open kinetic component constituted only a small fraction of the total number of transitions and became negligible at voltages greater than -65 mV. Adjacent interval analysis showed that there is no correlation in the duration of successive open and closed events. Consistent with this analysis, maximum likelihood estimation of the rate constants for nine different single-channel models produced a preferred model (model 1) having a linear sequence of closed states and two open states emerging from the last closed state. The effect of temperature on the rate constants of model 1 was studied. An increase in temperature increased all rate constants; the shift in Po would be the result of an increase in the closing rates predominant over the change in the opening rates. The temperature study also provided the basis for building an energy diagram for the transitions between channel states. PMID:1318096

Constant fields and constant gradients in open ionic channels.

PubMed Central

Chen, D P; Barcilon, V; Eisenberg, R S

1992-01-01

Ions enter cells through pores in proteins that are holes in dielectrics. The energy of interaction between ion and charge induced on the dielectric is many kT, and so the dielectric properties of channel and pore are important. We describe ionic movement by (three-dimensional) Nemst-Planck equations (including flux and net charge). Potential is described by Poisson's equation in the pore and Laplace's equation in the channel wall, allowing induced but not permanent charge. Asymptotic expansions are constructed exploiting the long narrow shape of the pore and the relatively high dielectric constant of the pore's contents. The resulting one-dimensional equations can be integrated numerically; they can be analyzed when channels are short or long (compared with the Debye length). Traditional constant field equations are derived if the induced charge is small, e.g., if the channel is short or if the total concentration gradient is zero. A constant gradient of concentration is derived if the channel is long. Plots directly comparable to experiments are given of current vs voltage, reversal potential vs. concentration, and slope conductance vs. concentration. This dielectric theory can easily be tested: its parameters can be determined by traditional constant field measurements. The dielectric theory then predicts current-voltage relations quite different from constant field, usually more linear, when gradients of total concentration are imposed. Numerical analysis shows that the interaction of ion and channel can be described by a mean potential if, but only if, the induced charge is negligible, that is to say, the electric field is spatially constant. Images FIGURE 1 PMID:1376159

Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Chan-Yong; Kim, Hee-Joong; Hong, Sae-Young; Song, Sang-Hun; Kwon, Hyuck-In

2017-08-01

In this study, we show that the two-stage unified stretched-exponential model can more exactly describe the time-dependence of threshold voltage shift (ΔV TH) under long-term positive-bias-stresses compared to the traditional stretched-exponential model in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). ΔV TH is mainly dominated by electron trapping at short stress times, and the contribution of trap state generation becomes significant with an increase in the stress time. The two-stage unified stretched-exponential model can provide useful information not only for evaluating the long-term electrical stability and lifetime of the a-IGZO TFT but also for understanding the stress-induced degradation mechanism in a-IGZO TFTs.

Dynamical characterization of inactivation path in voltage-gated Na+ ion channel by non-equilibrium response spectroscopy

PubMed Central

Pal, Krishnendu; Gangopadhyay, Gautam

2016-01-01

ABSTRACT Inactivation path of voltage gated sodium channel has been studied here under various voltage protocols as it is the main governing factor for the periodic occurrence and shape of the action potential. These voltage protocols actually serve as non-equilibrium response spectroscopic tools to study the ion channel in non-equilibrium environment. In contrast to a lot of effort in finding the crystal structure based molecular mechanism of closed-state(CSI) and open-state inactivation(OSI); here our approach is to understand the dynamical characterization of inactivation. The kinetic flux as well as energetic contribution of the closed and open- state inactivation path is compared here for voltage protocols, namely constant, pulsed and oscillating. The non-equilibrium thermodynamic quantities used in response to these voltage protocols serve as improved characterization tools for theoretical understanding which not only agrees with the previously known kinetic measurements but also predict the energetically optimum processes to sustain the auto-regulatory mechanism of action potential and the consequent inactivation steps needed. The time dependent voltage pattern governs the population of the conformational states which when couple with characteristic rate parameters, the CSI and OSI selectivity arise dynamically to control the inactivation path. Using constant, pulsed and continuous oscillating voltage protocols we have shown that during depolarization the OSI path is more favored path of inactivation however, in the hyper-polarized situation the CSI is favored. It is also shown that the re-factorisation of inactivated sodium channel to resting state occurs via CSI path. Here we have shown how the subtle energetic and entropic cost due to the change in the depolarization magnitude determines the optimum path of inactivation. It is shown that an efficient CSI and OSI dynamical profile in principle can characterize the open-state drug blocking phenomena. PMID:27367642

Novel zero voltage transition pulse width modulation flyback converter

NASA Astrophysics Data System (ADS)

Adib, Ehsan; Farzanehfard, Hosein

2010-09-01

In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

Effect of different stages of tensile deformation on micromagnetic parameters in high-strength, low-alloy steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaidyanathan, S.; Moorthy, V.; Kalyanasundaram, P.

The influence of tensile deformation on the magnetic Barkhausen emissions (MBE) and hysteresis loop has been studied in a high-strength, low-alloy steel (HSLA) and its weldment. The magnetic measurements were made both in loaded and unloaded conditions for different stress levels. The root-mean-square (RMS) voltage of the MBE has been used for analysis. This study shows that the preyield and postyield deformation can be identified from the change in the MBE profile. The initial elastic deformation showed a linear increase in the MBE level in the loaded condition, and the MBE level remained constant in the unloaded condition. The microplasticmore » yielding, well below the macroyield stress, significantly reduces the MBE, indicating the operation of grain-boundary dislocation sources below the macroyield stress. This is indicated by the slow increase in the MBE level in the loaded condition and the decrease in the MBE level in the unloaded condition. The macroyielding resulted in a significant increase in the MBE level in the loaded condition and, more clearly, in the unloaded condition. The increase in the MBE level during macroyielding has been attributed to the grain rotation phenomenon, in order to maintain the boundary integrity between adjacent grains, which would preferentially align the magnetic domains along the stress direction. This study shows that MBE during tensile deformation can be classified into four stages: (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding, and (4) progressive plastic deformation. A multimagnetic parameter approach, combining the hysteresis loop and MBE, has been suggested to evaluate the residual stresses.« less

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

NASA Astrophysics Data System (ADS)

Kim, Si Joon; Mohan, Jaidah; Lee, Jaebeom; Lee, Joy S.; Lucero, Antonio T.; Young, Chadwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

2018-04-01

We report on the effect of the Hf0.5Zr0.5O2 (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 °C for 1 min in a nitrogen ambient to be compatible with the back-end of the line thermal budget. As the HZO film thickness decreases, low-voltage operation (1.0 V or less) can be achieved without the dead layer effect, although switching polarization (Psw) tends to decrease due to the smaller grain size. Meanwhile, for 20-nm-thick HZO films prepared under the identical stress (similar TiN top electrode thickness and thermal budget), the Psw and dielectric constant are reduced because of additional monoclinic phase formation.

A High Voltage Ratio and Low Ripple Interleaved DC-DC Converter for Fuel Cell Applications

PubMed Central

Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

2012-01-01

This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters. PMID:23365536

A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

PubMed

Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

2012-01-01

This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

Evaluation of Fuel Cell Operation and Degradation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, Mark; Gemmen, Randall; Richards, George

The concepts of area specific resistance (ASR) and degradation are developed for different fuel cell operating modes. The concepts of exergetic efficiency and entropy production were applied to ASR and degradation. It is shown that exergetic efficiency is a time-dependent function useful describing the thermal efficiency of a fuel cell and the change in thermal efficiency of a degrading fuel cell. Entropy production was evaluated for the cases of constant voltage operation and constant current operation of the fuel cell for a fuel cell undergoing ohmic degradation. It was discovered that the Gaussian hypergeometric function describes the cumulative entropy andmore » electrical work produced by fuel cells operating at constant voltage. The Gaussian hypergeometric function is found in many applications in modern physics. This paper builds from and is an extension of several papers recently published by the authors in the Journal of The Electrochemical Society (ECS), ECS Transactions, Journal of Power Sources, and the Journal of Fuel Cell Science and Technology.« less

High voltage power supply

NASA Technical Reports Server (NTRS)

Ruitberg, A. P.; Young, K. M. (Inventor)

1985-01-01

A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

Hydroelectric voltage generation based on water-filled single-walled carbon nanotubes.

PubMed

Yuan, Quanzi; Zhao, Ya-Pu

2009-05-13

A DFT/MD mutual iterative method was employed to give insights into the mechanism of voltage generation based on water-filled single-walled carbon nanotubes (SWCNTs). Our calculations showed that a constant voltage difference of several mV would generate between the two ends of a carbon nanotube, due to interactions between the water dipole chains and charge carriers in the tube. Our work validates this structure of a water-filled SWCNT as a promising candidate for a synthetic nanoscale power cell, as well as a practical nanopower harvesting device at the atomic level.

Methods for testing high voltage connectors in vacuum, measurements of thermal stresses in encapsulated assemblies, and measurement of dielectric strength of electrodes in encapsulants versus radius of curvature

NASA Technical Reports Server (NTRS)

Bever, R. S.

1976-01-01

Internal embedment stress measurements were performed, using tiny ferrite core transformers, whose voltage output was calibrated versus pressure by the manufacturer. Comparative internal strain measurements were made by attaching conventional strain gages to the same type of resistors and encapsulating these in various potting compounds. Both types of determinations were carried out while temperature cycling from 77 C to -50 C.

Variation of Wall Shear Stress and Reynolds Stress over a Flat Plate Downstream of a Boundary Layer Manipulator

DTIC Science & Technology

1990-06-01

Layer Manipulator is placed AP differential pressure across the surface fence e, IC, mean and turbulent viscous dissipation Rt absolute viscosity of...feet long. The zero point for the traversing system is situated 3.3 feet from the inlet end of the blockhouse and ranges over 90% of the semi-open...tenth the absolute air pressure in millimeters of water. A voltage divider further reduces CD23 output voltage by one-half to accommodate the MASSCOMP

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu Shiyang; Nakajima, Anri; Ohashi, Takuo

2005-12-01

The interface trap generation ({delta}N{sub it}) and fixed oxide charge buildup ({delta}N{sub ot}) under negative bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for {delta}N{sub it} and {delta}N{sub ot}. At the earlier stress times, {delta}N{sub it} dominates the threshold voltage shift ({delta}V{sub th}) and {delta}N{sub ot} is negligible. With increasing stress time, the rate of increase of {delta}N{sub it} decreases continuously, showing a saturating trend for longer stress times, while {delta}N{submore » ot} still has a power-law dependence on stress time so that the relative contribution of {delta}N{sub ot} increases. The thermal activation energy of {delta}N{sub it} and the NBTI lifetime of pMOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.« less

Mechanical and electrochemical response of a LiCoO 2 cathode using reconstructed microstructures

DOE PAGES

Mendoza, Hector; Roberts, Scott Alan; Brunini, Victor; ...

2016-01-01

As LiCoO 2 cathodes are charged, delithiation of the LiCoO 2 active material leads to an increase in the lattice spacing, causing swelling of the particles. When these particles are packed into a bicontinuous, percolated network, as is the case in a battery electrode, this swelling leads to the generation of significant mechanical stress. In this study we performed coupled electrochemical-mechanical simulations of the charging of a LiCoO 2 cathode in order to elucidate the mechanisms of stress generation and the effect of charge rate and microstructure on these stresses. Energy dispersive spectroscopy combined with scanning electron microscopy imaging wasmore » used to create 3D reconstructions of a LiCoO 2 cathode, and the Conformal Decomposition Finite Element Method is used to automatically generate computational meshes on this reconstructed microstructure. Replacement of the ideal solution Fickian diffusion model, typically used in battery simulations, with a more general non-ideal solution model shows substantially smaller gradients of lithium within particles than is typically observed in the literature. Using this more general model, lithium gradients only appear at states of charge where the open-circuit voltage is relatively constant. While lithium gradients do affect the mechanical stress state in the particles, the maximum stresses are always found in the fully-charged state and are strongly affected by the local details of the microstructure and particle-to-particle contacts. These coupled electrochemical-mechanical simulations begin to yield insight into the partitioning of volume change between reducing pore space and macroscopically swelling the electrode. Lastly, preliminary studies that include the presence of the polymeric binder suggest that it can greatly impact stress generation and that it is an important area for future research.« less

Precision linear ramp function generator

DOEpatents

Jatko, W.B.; McNeilly, D.R.; Thacker, L.H.

1984-08-01

A ramp function generator is provided which produces a precise linear ramp function which is repeatable and highly stable. A derivative feedback loop is used to stabilize the output of an integrator in the forward loop and control the ramp rate. The ramp may be started from a selected baseline voltage level and the desired ramp rate is selected by applying an appropriate constant voltage to the input of the integrator.

Precision linear ramp function generator

DOEpatents

Jatko, W. Bruce; McNeilly, David R.; Thacker, Louis H.

1986-01-01

A ramp function generator is provided which produces a precise linear ramp unction which is repeatable and highly stable. A derivative feedback loop is used to stabilize the output of an integrator in the forward loop and control the ramp rate. The ramp may be started from a selected baseline voltage level and the desired ramp rate is selected by applying an appropriate constant voltage to the input of the integrator.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, K.N.

1996-09-24

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

Development of High Level Electrical Stress Failure Threshold and Prediction Model for Small Scale Junction Integrated Circuits

DTIC Science & Technology

1978-09-01

AWACS EMP Guidelines presents two different models to predict the damage pcwer of the dev-ce and the circuit damage EMP voltage ( VEMP ). Neither of...calculated as K P~ I V BD 6. The damage EMP voltage ( VEMP ) is calculated KZ EMP +IZ =D +BD VBD1F 7. The damage EMP voltage is calculated for collector

Temperature-dependent degradation mechanisms of threshold voltage in La2O3-gated n-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Wang, Ming-Tsong; Hsu, De-Cheng; Juan, Pi-Chun; Wang, Y. L.; Lee, Joseph Ya-min

2010-09-01

Metal-oxide-semiconductor capacitors and n-channel metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric were fabricated. The positive bias temperature instability was studied. The degradation of threshold voltage (ΔVT) showed an exponential dependence on the stress time in the temperature range from 25 to 75 °C. The degradation of subthreshold slope (ΔS) and gate leakage (IG) with stress voltage was also measured. The degradation of VT is attributed to the oxide trap charges Qot. The extracted activation energy of 0.2 eV is related to a degradation dominated by the release of atomic hydrogen in La2O3 thin films.

Research on the response characteristics of solenoid valve of the air-jet loom by simulation

NASA Astrophysics Data System (ADS)

Jin, Yuzhen; Deng, Ruoyu; Jin, Yingzi; Hu, Xudong

2013-12-01

Solenoid valve is one of the executive parts of weft insertion control system. According to the response characteristics of the solenoid valve, an improved design becomes a necessity. Firstly, the numerical model was established after analyzing the solenoid valve during its start-up and shut-down. Comparing the simulation data with the practical data, it is verified that the numerical simulation model has a high feasibility. Secondly, excitation voltage and spring pre-compression were adjusted respectively, and the response rules after adjusting were investigated. The research of the study shows: the response time tends to be inverse proportional to the excitation voltage during start-up, and it becomes a constant value with the increase of the excitation voltage; the response time is proportional to the spring pre-compression when the solenoid valve starts up, it is inverse proportional to spring pre-compression when the solenoid valve shuts down. And the total response time is a constant value with the increase of the spring pre-compression. Therefore, the value of the excitation voltage and the spring pre-compression should be selected when the curve is becoming flatten. The results of the research can provide the reference to the further development of the solenoid valve.

Investigation of Dielectric Breakdown Characteristics for Double-break Vacuum Interrupter and Dielectric Breakdown Probability Distribution in Vacuum Interrupter

NASA Astrophysics Data System (ADS)

Shioiri, Tetsu; Asari, Naoki; Sato, Junichi; Sasage, Kosuke; Yokokura, Kunio; Homma, Mitsutaka; Suzuki, Katsumi

To investigate the reliability of equipment of vacuum insulation, a study was carried out to clarify breakdown probability distributions in vacuum gap. Further, a double-break vacuum circuit breaker was investigated for breakdown probability distribution. The test results show that the breakdown probability distribution of the vacuum gap can be represented by a Weibull distribution using a location parameter, which shows the voltage that permits a zero breakdown probability. The location parameter obtained from Weibull plot depends on electrode area. The shape parameter obtained from Weibull plot of vacuum gap was 10∼14, and is constant irrespective non-uniform field factor. The breakdown probability distribution after no-load switching can be represented by Weibull distribution using a location parameter. The shape parameter after no-load switching was 6∼8.5, and is constant, irrespective of gap length. This indicates that the scatter of breakdown voltage was increased by no-load switching. If the vacuum circuit breaker uses a double break, breakdown probability at low voltage becomes lower than single-break probability. Although potential distribution is a concern in the double-break vacuum cuicuit breaker, its insulation reliability is better than that of the single-break vacuum interrupter even if the bias of the vacuum interrupter's sharing voltage is taken into account.

Three-Level 48-Pulse STATCOM with Pulse Width Modulation

NASA Astrophysics Data System (ADS)

Singh, Bhim; Srinivas, Kadagala Venkata

2016-03-01

In this paper, a new control strategy of a three-level 48-pulse static synchronous compensator (STATCOM) is proposed with a constant dc link voltage and pulse width modulation at fundamental frequency switching. The proposed STATCOM is realized using eight units of three-level voltage source converters (VSCs) to form a three-level 48-pulse STATCOM. The conduction angle of each three-level VSC is modulated to control the ac converter output voltage, which controls the reactive power of the STATCOM. A fuzzy logic controller is used to control the STATCOM. The dynamic performance of the STATCOM is studied for the control of the reference reactive power, the reference terminal voltage and under the switching of inductive and capacitive loads.

Ratcheting Behavior of a Titanium-Stabilized Interstitial Free Steel

NASA Astrophysics Data System (ADS)

De, P. S.; Chakraborti, P. C.; Bhattacharya, B.; Shome, M.; Bhattacharjee, D.

2013-05-01

Engineering stress-control ratcheting behavior of a titanium-stabilized interstitial free steel has been studied under different combinations of mean stress and stress amplitude at a stress rate of 250 MPa s-1. Tests have been done up to 29.80 pct true ratcheting strain evolution in the specimens at three maximum stress levels. It is observed that this amount of ratcheting strain is more than the uniform tensile strain at a strain rate of 10-3 s-1 and evolves without showing tensile instability of the specimens. In the process of ratcheting strain evolution at constant maximum stresses, the effect of increasing stress amplitude is found to be more than that of increasing the mean stress component. Further, the constant maximum stress ratcheting test results reveal that the number of cycles ( N) required for 29.80 pct. true ratcheting strain evolution exponentially increases with increase of stress ratio ( R). Post-ratcheting tensile test results showing increase of strength and linear decrease in ductility with increasing R at different constant maximum stresses indicate that stress parameters used during ratcheting tests influence the size of the dislocation cell structure of the steel even with the same amount of ratcheting strain evolution. It is postulated that during ratcheting fatigue, damage becomes greater with the increase of R for any fixed amount of ratcheting strain evolution at constant maximum stress.

A Hybrid Maximum Power Point Tracking Method for Automobile Exhaust Thermoelectric Generator

NASA Astrophysics Data System (ADS)

Quan, Rui; Zhou, Wei; Yang, Guangyou; Quan, Shuhai

2017-05-01

To make full use of the maximum output power of automobile exhaust thermoelectric generator (AETEG) based on Bi2Te3 thermoelectric modules (TEMs), taking into account the advantages and disadvantages of existing maximum power point tracking methods, and according to the output characteristics of TEMs, a hybrid maximum power point tracking method combining perturb and observe (P&O) algorithm, quadratic interpolation and constant voltage tracking method was put forward in this paper. Firstly, it searched the maximum power point with P&O algorithms and a quadratic interpolation method, then, it forced the AETEG to work at its maximum power point with constant voltage tracking. A synchronous buck converter and controller were implemented in the electric bus of the AETEG applied in a military sports utility vehicle, and the whole system was modeled and simulated with a MATLAB/Simulink environment. Simulation results demonstrate that the maximum output power of the AETEG based on the proposed hybrid method is increased by about 3.0% and 3.7% compared with that using only the P&O algorithm and the quadratic interpolation method, respectively. The shorter tracking time is only 1.4 s, which is reduced by half compared with that of the P&O algorithm and quadratic interpolation method, respectively. The experimental results demonstrate that the tracked maximum power is approximately equal to the real value using the proposed hybrid method,and it can preferentially deal with the voltage fluctuation of the AETEG with only P&O algorithm, and resolve the issue that its working point can barely be adjusted only with constant voltage tracking when the operation conditions change.

Self-tuning bandpass filter

NASA Technical Reports Server (NTRS)

Deboo, G. J.; Hedlund, R. C. (Inventor)

1973-01-01

An electronic filter is described which simultaneously maintains a constant bandwidth and a constant center frequency gain as the input signal frequency varies, and remains self-tuning to that center frequency over a decade range. The filter utilizes a field effect transistor (FET) as a voltage variable resistance in the bandpass frequency determining circuit. The FET is responsive to a phase detector to achieve self-tuning.

MIS capacitor studies on silicon carbide single crystals

NASA Technical Reports Server (NTRS)

Kopanski, J. J.

1990-01-01

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Applicability of the Child-Langmuir laws versions for describing the glow discharge cathode sheath in CO2

NASA Astrophysics Data System (ADS)

Lisovskiy, Valeriy; Krol, Hennadii; Osmayev, Ruslan; Yegorenkov, Vladimir

2016-09-01

This work is devoted to the determination of the law that may be applicable to the description of the cathode sheath in CO2. To this end three versions of the Child-Langmuir law have been considered - a collision free one (for the ions moving through a cathode sheath without collisions with gas molecules) as well as two collision- related versions- one for a constant mean free path of positive ions and one for a constant mobility of positive ions. The current-voltage characteristics and the cathode sheath thickness of the glow discharge in carbon oxide have been simultaneously measured in the pressure range from 0.05 to 1 Torr and with the discharge current values up to 80 mA. The inter-electrode distance has been chosen such that the discharge consists only of the cathode sheath and a small portion of the negative glow, i.e. the experiments have been performed in short tubes. In this case the voltage drop across the cathode sheath is equal approximately to the voltage drop across the electrodes. In the whole range of the discharge conditions we have studied the cathode sheath characteristics are found to obey correctly only to the Child-Langmuir law version with a constant ion mobility. The reason for this phenomenon may be related with a significant conversion of carbon dioxide molecules.

Ultrasonic input-output for transmitting and receiving longitudinal transducers coupled to same face of isotropic elastic plate

NASA Technical Reports Server (NTRS)

Williams, J. H., Jr.; Karagulle, H.; Lee, S. S.

1982-01-01

The quantitative understanding of ultrasonic nondestructive evaluation parameters such as the stress wave factor were studied. Ultrasonic input/output characteristics for an isotropic elastic plate with transmitting and receiving longitudinal transducers coupled to the same face were analyzed. The asymptotic normal stress is calculated for an isotropic elastic half space subjected to a uniform harmonic normal stress applied to a circular region at the surface. The radiated stress waves are traced within the plate by considering wave reflections at the top and bottom faces. The output voltage amplitude of the receiving transducer is estimated by considering only longitudinal waves. Agreement is found between the output voltage wave packet amplitudes and times of arrival due to multiple reflections of the longitudinal waves.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk; Barquinha, P. M. C.

Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys.more » 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.« less

Designing skin response meter for psycho galvanic reflex

NASA Astrophysics Data System (ADS)

Dhokalia, Dhruv M.; Atreya, Parul; Kumar, Arun

2011-12-01

Human skin offers some resistance to current and voltage. This resistance changes with the emotional state of the body. The circuit proposed here measures changes in our skin resistance following changes in our mental state. In the relaxed state, the resistance offered by the skin is as high as 2 mega-ohms or more, which reduces to 500 kilo-ohms or less when the emotional stress is too high. The reduction in skin resistance is related to increased blood flow and permeability followed by the physiological changes during high stress. This increases the electrical conductivity of the skin. This circuit is useful to monitor the skin's response to relaxation techniques. It is very sensitive and shows response during a sudden moment of stress. Even a deep sigh will give response in the circuit. The circuit uses a sensitive amplifier to sense variations in the skin resistance. IC CA3140 is designed as a resistance- to-voltage converter that outputs varying voltage based on the skin's conductivity.

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

NASA Astrophysics Data System (ADS)

Migliorato, Piero; Delwar Hossain Chowdhury, Md; Gwang Um, Jae; Seok, Manju; Jang, Jin

2012-09-01

The analysis of current-voltage (I-V) and capacitance-voltage (C-V) characteristics for amorphous indium gallium zinc oxide Thin film transistors as a function of active layer thickness shows that negative bias under illumination stress (NBIS) is quantitatively explained by creation of a bulk double donor, with a shallow singly ionized state ɛ(0/+) > EC-0.073 eV and a deep doubly ionized state ɛ(++/+) < EC-0.3 eV. The gap density of states, extracted from the capacitance-voltage curves, shows a broad peak between EC-E = 0.3 eV and 1.0 eV, which increases in height with NBIS stress time and corresponds to the broadened transition energy between singly and doubly ionized states. We propose that the center responsible is an oxygen vacancy and that the presence of a stable singly ionized state, necessary to explain our experimental results, could be due to the defect environment provided by the amorphous network.

Magnetoelastic Effect-Based Transmissive Stress Detection for Steel Strips: Theory and Experiment

PubMed Central

Zhang, Qingdong; Su, Yuanxiao; Zhang, Liyuan; Bi, Jia; Luo, Jiang

2016-01-01

For the deficiencies of traditional stress detection methods for steel strips in industrial production, this paper proposes a non-contact stress detection scheme based on the magnetoelastic effect. The theoretical model of the transmission-type stress detection is established, in which the output voltage and the tested stress obey a linear relation. Then, a stress detection device is built for the experiment, and Q235 steel under uniaxial tension is tested as an example. The result shows that the output voltage rises linearly with the increase of the tensile stress, consistent with the theoretical prediction. To ensure the accuracy of the stress detection method in actual application, the temperature compensation, magnetic shielding and some other key technologies are investigated to reduce the interference of the external factors, such as environment temperature and surrounding magnetic field. The present research develops the theoretical and experimental foundations for the magnetic stress detection system, which can be used for online non-contact monitoring of strip flatness-related stress (tension distribution or longitudinal residual stress) in the steel strip rolling process, the quality evaluation of strip flatness after rolling, the life and safety assessment of metal construction and other industrial production links. PMID:27589742

Gating by Cyclic Gmp and Voltage in the α Subunit of the Cyclic Gmp–Gated Channel from Rod Photoreceptors

PubMed Central

Benndorf, Klaus; Koopmann, Rolf; Eismann, Elisabeth; Kaupp, U. Benjamin

1999-01-01

Gating by cGMP and voltage of the α subunit of the cGMP-gated channel from rod photoreceptor was examined with a patch-clamp technique. The channels were expressed in Xenopus oocytes. At low [cGMP] (<20 μM), the current displayed strong outward rectification. At low and high (700 μM) [cGMP], the channel activity was dominated by only one conductance level. Therefore, the outward rectification at low [cGMP] results solely from an increase in the open probability, P o. Kinetic analysis of single-channel openings revealed two exponential distributions. At low [cGMP], the larger P o at positive voltages with respect to negative voltages is caused by an increased frequency of openings in both components of the open-time distribution. In macroscopic currents, depolarizing voltage steps, starting from −100 mV, generated a time-dependent current that increased with the step size (activation). At low [cGMP] (20 μM), the degree of activation was large and the time course was slow, whereas at saturating [cGMP] (7 mM) the respective changes were small and fast. The dose–response relation at −100 mV was shifted to the right and saturated at significantly lower P o values with respect to that at +100 mV (0.77 vs. 0.96). P o was determined as function of the [cGMP] (at +100 and −100 mV) and voltage (at 20, 70, and 700 μM, and 7 mM cGMP). Both relations could be fitted with an allosteric state model consisting of four independent cGMP-binding reactions and one voltage-dependent allosteric opening reaction. At saturating [cGMP] (7 mM), the activation time course was monoexponential, which allowed us to determine the individual rate constants for the allosteric reaction. For the rapid rate constants of cGMP binding and unbinding, lower limits are determined. It is concluded that an allosteric model consisting of four independent cGMP-binding reactions and one voltage-dependent allosteric reaction, describes the cGMP- and voltage-dependent gating of cGMP-gated channels adequately. PMID:10498668

Evaluation of a miniature magnetostrictive actuator using Galfenol under tensile stress

NASA Astrophysics Data System (ADS)

Ueno, Toshiyuki; Miura, Hidemitsu; Yamada, Sotoshi

2011-02-01

We are, at present, developing miniature actuators using an iron-gallium alloy (Galfenol). Galfenol is an iron-based magnetostrictive material with magnetostriction exceeding 200 ppm, Young's modulus of 70 GPa and a high relative permeability (>100). The advantages of an actuator using this material are capability of miniaturization, stability against external force, low voltage driving and high power. In this study, a miniature vibrator using an E core of Galfenol under tensile stress up to 20 MPa was investigated. The vibrator did not fracture and maintained the magnetostriction even under a high tensile stress. In addition, the resonance frequency, unchanged under the tensile stress, was lower than the cutoff frequency, hence the vibrator can be driven with a low voltage even in resonance driving. The temperature rise in resonance driving was low and creep was not observed in resonance driving under tensile stress. The vibrator will be applicable in flat panel or bone conductive speakers.

The Sheath-less Planar Langmuir Probe

NASA Astrophysics Data System (ADS)

Cooke, D. L.

2017-12-01

The Langmuir probe is one of the oldest plasma diagnostics, provided the plasma density and species temperature from analysis of a current-voltage curve as the voltage is swept over a practically chosen range. The analysis depends on a knowledge or theory of the many factors that influence the current-voltage curve including, probe shape, size, nearby perturbations, and the voltage reference. For applications in Low Earth Orbit, the Planar Langmuir Probe, PLP, is an attractive geometry because the ram ion current is very constant over many Volts of a sweep, allowing the ion density and electron temperature to be determined independently with the same instrument, at different points on the sweep. However, when the physical voltage reference is itself small and electrically floating as with a small spacecraft, the spacecraft and probe system become a double probe where the current collection theory depends on the interaction of the spacecraft with the plasma which is generally not as simple as the probe itself. The Sheath-less PLP, SPLP, interlaces on a single ram facing surface, two variably biased probe elements, broken into many small and intertwined segments on a scale smaller than the plasma Debye length. The SPLP is electrically isolated from the rest of the spacecraft. For relative bias potentials of a few volts, the ion current to all segments of each element will be constant, while the electron currents will vary as a function of the element potential and the electron temperature. Because the segments are small, intertwined, and floating, the assembly will always present the same floating potential to the plasma, with minimal growth as a function of voltage, thus sheath-less and still planar. This concept has been modelled with Nascap, and tested with a physical model inserted into a Low Earth Orbit-like chamber plasma. Results will be presented.

Computer-aided control of electrolysis of solid Nb2O5 in molten CaCl2.

PubMed

Wu, Tian; Xiao, Wei; Jin, Xianbo; Liu, Chao; Wang, Dihua; Chen, George Z

2008-04-07

Low energy production of Nb powders via computer-aided control (CAC) of two-electrode electrolysis of porous Nb2O5 pellets (ca. 1.0 g) has been successfully demonstrated in molten CaCl2 at 1123 K. It was observed that potentiostatic electrolysis of the oxide in a three-electrode cell led to a cell voltage, i.e. the potential difference between the working (cathode) and counter (anode) electrodes, that decreased to a low and stable value within 1-2 h of the potential application until the end of the electrolysis (up to 12 h in this work). The cell voltage varied closely according to the current change. The stabilised cell voltage was below 2.5 V when the cathode potential was more positive than that for the reduction of Ca2+, leading to much lower energy consumption than that of constant voltage (>3.0 V) two-electrode electrolysis, as previously reported. Using a computer to program the variation of the cell voltage of two-electrode electrolysis according to that observed in the potentiostatic three-electrode electrolysis (0.05 V vs. Ca/Ca2+), a Nb powder with ca. 3900 ppm oxygen was produced in 12 h, with the energy consumption being 37.4% less than that of constant voltage two-electrode electrolysis at 3.0 V. Transmission electron microscopy revealed thin oxide layers (4-6 nm) on individual nodular particles (1-5 microm) of the obtained Nb powder. The oxide layer was likely formed in post-electrolysis processing operations, including washing in water, and contributed largely to the oxygen content in the obtained Nb powder.

METHOD AND APPARATUS FOR DETERMINING AMALGAM DECOMPOSITION RATE

DOEpatents

Johnson, R.W.; Wright, C.C.

1962-04-24

A method and apparatus for measuring the rate at which an amalgam decomposes in contact with aqueous solutions are described. The amalgam and an aqueous hydroxide solution are disposed in an electrolytic cell. The amalgam is used as the cathode of the cell, and an electrode and anode are disposed in the aqueous solution. A variable source of plating potential is connected across the cell. The difference in voltage between the amalgam cathode and a calibrated source of reference potential is used to control the variable source to null the difference in voltage and at the same time to maintain the concentration of the amalgam at some predetermined constant value. The value of the current required to maintain this concentration constant is indicative of the decomposition rate of the amalgam. (AEC)

Electrospun poly(methyl methacrylate) fibrous mat showing piezoelectric properties

NASA Astrophysics Data System (ADS)

Nobeshima, Taiki; Ishii, Yuya; Sakai, Heisuke; Uemura, Sei; Yoshida, Manabu

2018-05-01

A piezoelectric effect, such as actuation behavior with voltage application, could be observed from a poly(methyl methacrylate) (PMMA) fibrous mat fabricated by electrospinning. This fibrous mat increased or decreased its thickness in accordance with the polarity of the applied voltage, which appears to be an inverse piezoelectric effect. The appearance d T constant was as large as 8.5 nm/V owing to the softness of the fibrous structure, and the coupling constant K T = 0.31 indicated its efficient piezoelectric property. This piezoelectric behavior was repeatedly observed to be stable at room temperature. In addition, the polarization components of the fibrous mat, which are considered to be the origin of its piezoelectric effect, and its relaxation behavior were confirmed from the results of thermally stimulated current measurements.

Overload and Underload Effects on the Fatigue Crack Growth Behavior of the 2024-T3 Aluminum Alloy

NASA Technical Reports Server (NTRS)

Dawicke, David S.

1997-01-01

Fatigue crack growth tests were conducted on 0.09 inch thick, 3.0 inch wide middle-crack tension specimens cut from sheets of 2024-T3 aluminum alloy. The tests were conducted using a load sequence that consisted of a single block of 2,500 cycles of constant amplitude loading followed by an overload/underload combination. The largest fatigue crack growth life occurred for the tests with the overload stress equal to 2 times the constant amplitude stress and the underload stress equal to the constant amplitude minimum stress. For the tests with compressive underloads, the fatigue crack growth life decreased with increasing compressive underload stress.

Design and simulation of maximum power point tracking (MPPT) system on solar module system using constant voltage (CV) method

NASA Astrophysics Data System (ADS)

Bhatara, Sevty Satria; Iskandar, Reza Fauzi; Kirom, M. Ramdlan

2016-02-01

Solar energy is one of renewable energy resource where needs a photovoltaic module to convert it into electrical energy. One of the problems on solar energy conversion is the process of battery charging. To improve efficiency of energy conversion, PV system needs another control method on battery charging called maximum power point tracking (MPPT). This paper report the study on charging optimation using constant voltage (CV) method. This method has a function of determining output voltage of the PV system on maximal condition, so PV system will always produce a maximal energy. A model represented a PV system with and without MPPT was developed using Simulink. PV system simulation showed a different outcome energy when different solar radiation and numbers of solar module were applied in the model. On the simulation of solar radiation 1000 W/m2, PV system with MPPT produces 252.66 Watt energy and PV system without MPPT produces 252.66 Watt energy. The larger the solar radiation, the greater the energy of PV modules was produced.

Method for sensing and measuring a concentration or partial pressure of a reactant used in a redox reaction

DOEpatents

Findl, E.

1984-12-21

A method for sensing or measuring the partial pressure or concentration of an electroactive species used in conjunction with an electrolyte, the method being characterized by providing a constant current between an anode and a cathode of an electrolyte-containing cell, while measuring changes in voltage that occur between either the anode and cathode or between a reference electrode and one of the main electrodes of the cell, thereby to determine the concentration or partial pressure of the electro-active species as a function of said measured voltage changes. The method of the invention can be practiced using either a cell having only an anode and a cathode, or using a cell having an anode and a cathode in combination with a reference electrode. Accurate measurements of small concentrations or partial pressures of electro-active species are obtainable with the method of the invention, by using constant currents of only a few microamperes between the anode and cathode of the cell, while the concentration-determining voltage is measured.

Structural changes in a commercial lithium-ion battery during electrochemical cycling: An in situ neutron diffraction study

NASA Astrophysics Data System (ADS)

Sharma, Neeraj; Peterson, Vanessa K.; Elcombe, Margaret M.; Avdeev, Maxim; Studer, Andrew J.; Blagojevic, Ned; Yusoff, Rozila; Kamarulzaman, Norlida

The structural response to electrochemical cycling of the components within a commercial Li-ion battery (LiCoO 2 cathode, graphite anode) is shown through in situ neutron diffraction. Lithuim insertion and extraction is observed in both the cathode and anode. In particular, reversible Li incorporation into both layered and spinel-type LiCoO 2 phases that comprise the cathode is shown and each of these components features several phase transitions attributed to Li content and correlated with the state-of-charge of the battery. At the anode, a constant cell voltage correlates with a stable lithiated graphite phase. Transformation to de-lithiated graphite at the discharged state is characterised by a sharp decrease in both structural cell parameters and cell voltage. In the charged state, a two-phase region exists and is composed of the lithiated graphite phase and about 64% LiC 6. It is postulated that trapping Li in the solid|electrolyte interface layer results in minimal structural changes to the lithiated graphite anode across the constant cell voltage regions of the electrochemical cycle.

Flight Demonstration of a Shock Location Sensor Using Constant Voltage Hot-Film Anemometry

NASA Technical Reports Server (NTRS)

Moes, Timothy R.; Sarma, Garimella R.; Mangalam, Siva M.

1997-01-01

Flight tests have demonstrated the effectiveness of an array of hot-film sensors using constant voltage anemometry to determine shock position on a wing or aircraft surface at transonic speeds. Flights were conducted at the NASA Dryden Flight Research Center using the F-15B aircraft and Flight Test Fixture (FTF). A modified NACA 0021 airfoil was attached to the side of the FTF, and its upper surface was instrumented to correlate shock position with pressure and hot-film sensors. In the vicinity of the shock-induced pressure rise, test results consistently showed the presence of a minimum voltage in the hot-film anemometer outputs. Comparing these results with previous investigations indicate that hot-film anemometry can identify the location of the shock-induced boundary layer separation. The flow separation occurred slightly forward of the shock- induced pressure rise for a laminar boundary layer and slightly aft of the start of the pressure rise when the boundary layer was tripped near the airfoil leading edge. Both minimum mean output and phase reversal analyses were used to identify the shock location.

Rotating flux-focusing eddy current probe for flaw detection

NASA Technical Reports Server (NTRS)

Wincheski, Russell A. (Inventor); Fulton, James P. (Inventor); Nath, Shridhar C. (Inventor); Simpson, John W. (Inventor); Namkung, Min (Inventor)

1997-01-01

A flux-focusing electromagnetic sensor which uses a ferromagnetic flux-focusing lens simplifies inspections and increases detectability of fatigue cracks about circular fasteners and other circular inhomogeneities in high conductivity material. The unique feature of the device is the ferrous shield isolating a high-turn pick-up coil from an excitation coil, The use of the magnetic shield is shown to produce a null voltage output across the receiving coil in the presence of an unflawed sample. A redistribution of the current flow in the sample caused by the presence of flaws, however, eliminates the shielding condition and a large output voltage is produced, yielding a clear unambiguous flaw signal. By rotating the probe in a path around a circular fastener such as a rivet while maintaining a constant distance between the probe and the center of a rivet, the signal due to current flow about the rivet can be held constant. Any further changes in the current distribution, such as due to a fatigue crack at the rivet joint, can be detected as an increase in the output voltage above that due to the flow about the rivet head.

Molecular dynamics simulations of thermally activated edge dislocation unpinning from voids in α -Fe

NASA Astrophysics Data System (ADS)

Byggmästar, J.; Granberg, F.; Nordlund, K.

2017-10-01

In this study, thermal unpinning of edge dislocations from voids in α -Fe is investigated by means of molecular dynamics simulations. The activation energy as a function of shear stress and temperature is systematically determined. Simulations with a constant applied stress are compared with dynamic simulations with a constant strain rate. We found that a constant applied stress results in a temperature-dependent activation energy. The temperature dependence is attributed to the elastic softening of iron. If the stress is normalized with the softening of the specific shear modulus, the activation energy is shown to be temperature-independent. From the dynamic simulations, the activation energy as a function of critical shear stress was determined using previously developed methods. The results from the dynamic simulations are in good agreement with the constant stress simulations, after the normalization. This indicates that the computationally more efficient dynamic method can be used to obtain the activation energy as a function of stress and temperature. The obtained relation between stress, temperature, and activation energy can be used to introduce a stochastic unpinning event in larger-scale simulation methods, such as discrete dislocation dynamics.

An Novel Continuation Power Flow Method Based on Line Voltage Stability Index

NASA Astrophysics Data System (ADS)

Zhou, Jianfang; He, Yuqing; He, Hongbin; Jiang, Zhuohan

2018-01-01

An novel continuation power flow method based on line voltage stability index is proposed in this paper. Line voltage stability index is used to determine the selection of parameterized lines, and constantly updated with the change of load parameterized lines. The calculation stages of the continuation power flow decided by the angle changes of the prediction of development trend equation direction vector are proposed in this paper. And, an adaptive step length control strategy is used to calculate the next prediction direction and value according to different calculation stages. The proposed method is applied clear physical concept, and the high computing speed, also considering the local characteristics of voltage instability which can reflect the weak nodes and weak area in a power system. Due to more fully to calculate the PV curves, the proposed method has certain advantages on analysing the voltage stability margin to large-scale power grid.

Rate dependent deformation of porous sandstone across the brittle-ductile transition

NASA Astrophysics Data System (ADS)

Jefferd, M.; Brantut, N.; Mitchell, T. M.; Meredith, P. G.

2017-12-01

Porous sandstones transition from dilatant, brittle deformation at low pressure, to compactant, ductile deformation at high pressure. Both deformation modes are driven by microcracking, and are expected to exhibit a time dependency due to chemical interactions between the pore fluid and the rock matrix. In the brittle regime, time-dependent failure and brittle creep are well documented. However, much less is understood in the ductile regime. We present results from a series of triaxial deformation experiments, performed in the brittle-ductile transition zone of fluid saturated Bleurswiller sandstone (initial porosity = 23%). Samples were deformed at 40 MPa effective pressure, to 4% axial strain, under either constant strain rate (10-5 s-1) or constant stress (creep) conditions. In addition to stress, axial strain and pore volume change, P wave velocities and acoustic emission were monitored throughout. During constant stress tests, the strain rate initially decreased with increasing strain, before reaching a minimum and accelerating to a constant level beyond 2% axial strain. When plotted against axial strain, the strain rate evolution under constant stress conditions, mirrors the stress evolution during the constant strain rate tests; where strain hardening occurs prior to peak stress, which is followed by strain softening and an eventual plateau. In all our tests, the minimum strain rate during creep occurs at the same inelastic strain as the peak stress during constant strain tests, and strongly decreases with decreasing applied stress. The microstructural state of the rock, as interpreted from similar volumetric strain curves, as well as the P-wave velocity evolution and AE production rate, appears to be solely a function of the total inelastic strain, and is independent of the length of time required to reach said strain. We tested the sensitivity of fluid chemistry on the time dependency, through a series of experiments performed under similar stress conditions, but with chemically inert decane instead of water as the pore fluid. Under the same applied stress, decane saturated samples reached a minimum strain rate 2 orders of magnitude lower than the water saturated samples. This is consistent with a mechanism of subcritical crack growth driven by chemical interactions between the pore fluid and the rock.

Variable-speed wind power system with improved energy capture via multilevel conversion

DOEpatents

Erickson, Robert W.; Al-Naseem, Osama A.; Fingersh, Lee Jay

2005-05-31

A system and method for efficiently capturing electrical energy from a variable-speed generator are disclosed. The system includes a matrix converter using full-bridge, multilevel switch cells, in which semiconductor devices are clamped to a known constant DC voltage of a capacitor. The multilevel matrix converter is capable of generating multilevel voltage wave waveform of arbitrary magnitude and frequencies. The matrix converter can be controlled by using space vector modulation.

A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C. Y., E-mail: cychang@gatech.edu; UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz; Choi, Daeyoung

2016-05-09

A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

Closed-loop pulsed helium ionization detector

DOEpatents

Ramsey, Roswitha S.; Todd, Richard A.

1987-01-01

A helium ionization detector for gas chromatography is operated in a constant current, pulse-modulated mode by configuring the detector, electrometer and a high voltage pulser in a closed-loop control system. The detector current is maintained at a fixed level by varying the frequency of fixed-width, high-voltage bias pulses applied to the detector. An output signal proportional to the pulse frequency is produced which is indicative of the charge collected for a detected species.

Development of in-situ high-voltage and high-temperature stressing capability on atomic force microscopy platform

DOE PAGES

Xiao, Chuanxiao; Jiang, Chun-Sheng; Johnston, Steve; ...

2017-10-18

Reliability has become an increasingly important issue as photovoltaic technologies mature. However, researching reliability at the nanometer scale is in its infancy; in particular, in-situ studies have not been reported to date. Here, to investigate potential-induced degradation (PID) of solar cell modules, we have developed an in-situ stressing capability with applied high voltage (HV) and high temperature (HT) on an atomic force microscopy (AFM) platform. We designed a sample holder to simultaneously accommodate 1000-V HV and 200 degrees C HT stressing. Three technical challenges have been overcome along with the development: thermal drift at HT, HV interference with measurement, andmore » arc discharge caused by HV. We demonstrated no observable measurement artifact under the stress conditions. Based on our in-situ stressing AFM, Kelvin probe force microscopy potential imaging revealed the evolution of electrical potential across the junction along with the PID stressing time, which provides vital information to further study the PID mechanism.« less

Development of in-situ high-voltage and high-temperature stressing capability on atomic force microscopy platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun-Sheng; Johnston, Steve

Reliability has become an increasingly important issue as photovoltaic technologies mature. However, researching reliability at the nanometer scale is in its infancy; in particular, in-situ studies have not been reported to date. Here, to investigate potential-induced degradation (PID) of solar cell modules, we have developed an in-situ stressing capability with applied high voltage (HV) and high temperature (HT) on an atomic force microscopy (AFM) platform. We designed a sample holder to simultaneously accommodate 1000-V HV and 200 degrees C HT stressing. Three technical challenges have been overcome along with the development: thermal drift at HT, HV interference with measurement, andmore » arc discharge caused by HV. We demonstrated no observable measurement artifact under the stress conditions. Based on our in-situ stressing AFM, Kelvin probe force microscopy potential imaging revealed the evolution of electrical potential across the junction along with the PID stressing time, which provides vital information to further study the PID mechanism.« less

Pressurised electro-osmotic dewatering of activated and anaerobically digested sludges: electrical variables analysis.

PubMed

Citeau, M; Olivier, J; Mahmoud, A; Vaxelaire, J; Larue, O; Vorobiev, E

2012-09-15

Pressurised electro-osmotic dewatering (PEOD) of two sewage sludges (activated and anaerobically digested) was studied under constant electric current (C.C.) and constant voltage (C.V.) with a laboratory chamber simulating closely an industrial filter. The influence of sludge characteristics, process parameters, and electrode/filter cloth position was investigated. The next parameters were tested: 40 and 80 A/m², 20, 30, and 50 V-for digested sludge dewatering; and 20, 40 and 80 A/m², 20, 30, and 50 V-for activated sludge dewatering. Effects of filter cloth electric resistance and initial cake thickness were also investigated. The application of PEOD provides a gain of 12 points of dry solids content for the digested sludge (47.0% w/w) and for the activated sludge (31.7% w/w). In PEOD processed at C.C. or at C.V., the dewatering flow rate was similar for the same electric field intensity. In C.C. mode, both the electric resistance of cake and voltage increase, causing a temperature rise by ohmic effect. In C.V. mode, a current intensity peak was observed in the earlier dewatering period. Applying at first a constant current and later on a constant voltage, permitted to have better control of ohmic heating effect. The dewatering rate was not significantly affected by the presence of filter cloth on electrodes, but the use of a thin filter cloth reduced remarkably the energy consumption compared to a thicker one: 69% of reduction energy input at 45% w/w of dry solids content. The reduction of the initial cake thickness is advantageous to increase the final dry solids content. Copyright © 2012 Elsevier Ltd. All rights reserved.

Steady-state kinetics of solitary batrachotoxin-treated sodium channels. Kinetics on a bounded continuum of polymer conformations.

PubMed Central

Rubinson, K A

1992-01-01

The underlying principles of the kinetics and equilibrium of a solitary sodium channel in the steady state are examined. Both the open and closed kinetics are postulated to result from round-trip excursions from a transition region that separates the openable and closed forms. Exponential behavior of the kinetics can have origins different from small-molecule systems. These differences suggest that the probability density functions (PDFs) that describe the time dependences of the open and closed forms arise from a distribution of rate constants. The distribution is likely to arise from a thermal modulation of the channel structure, and this provides a physical basis for the following three-variable equation: [formula; see text] Here, A0 is a scaling term, k is the mean rate constant, and sigma quantifies the Gaussian spread for the contributions of a range of effective rate constants. The maximum contribution is made by k, with rates faster and slower contributing less. (When sigma, the standard deviation of the spread, goes to zero, then p(f) = A0 e-kt.) The equation is applied to the single-channel steady-state probability density functions for batrachotoxin-treated sodium channels (1986. Keller et al. J. Gen. Physiol. 88: 1-23). The following characteristics are found: (a) The data for both open and closed forms of the channel are fit well with the above equation, which represents a Gaussian distribution of first-order rate processes. (b) The simple relationship [formula; see text] holds for the mean effective rat constants. Or, equivalently stated, the values of P open calculated from the k values closely agree with the P open values found directly from the PDF data. (c) In agreement with the known behavior of voltage-dependent rate constants, the voltage dependences of the mean effective rate constants for the opening and closing of the channel are equal and opposite over the voltage range studied. That is, [formula; see text] "Bursts" are related to the well-known cage effect of solution chemistry. PMID:1312365

Diurnal rhythm of the pituitary-adrenocortical response to stress: effect of constant light and constant darkness

NASA Technical Reports Server (NTRS)

Vernikos-Danellis, J.; Winget, C. M.; Hetherington, N. W.

1970-01-01

The existence of a biological rhythm in the response of animals to noxious stimuli and drugs is well known. However, the mechanism of this response is not well understood. This study was undertaken to describe the existence of a diurnal rhythm in the hypothalamic-pituitary-adrenocortical system before and after stress in female rats kept in controlled environmental conditions in 12L:12D, 24L:OD, or OL:24D. Plasma ACTH and plasma corticosterone concentrations were compared in unstressed animals. The time pattern in the response to stress was determined at four hourly intervals during a 24 hr period in which plasma ACTH and plasma corticosterone were measured at different time intervals. The stress response varied considerably with time of day in both magnitude and duration. The adrenals of rats exposed to constant light for 45 days atrophied, whereas the adrenals of animals kept in constant dark for the same period did not differ significantly from those of controls kept in 12L:12D. The increase in plasma ACTH in response to stress was greater both in the animals maintained in constant light and in constant dark than in the 12L:12D controls. Homeostatic mechanisms involved in these changes are discussed.

Zn/gelled 6 M KOH/O 2 zinc-air battery

NASA Astrophysics Data System (ADS)

Mohamad, A. A.

The gel electrolyte for the zinc-air cell was prepared by mixing hydroponics gel with a 6 M potassium hydroxide aqueous solution. The self-discharge of cells was characterized by measuring the open-circuit voltage. The effect of a discharge rate of 50 mA constant current on cell voltage and plateau hour, as well as the voltage-current and current density-power density were measured and analysed. The electrode degradation after discharge cycling was characterized by structural and surface methods. The oxidation of the electrode surface further blocked the utilization of the Zn anode and was identified as a cause for the failure of the cell.

Pattern recognition monitoring of PEM fuel cell

DOEpatents

Meltser, M.A.

1999-08-31

The CO-concentration in the H{sub 2} feed stream to a PEM fuel cell stack is monitored by measuring current and voltage behavior patterns from an auxiliary cell attached to the end of the stack. The auxiliary cell is connected to the same oxygen and hydrogen feed manifolds that supply the stack, and discharges through a constant load. Pattern recognition software compares the current and voltage patterns from the auxiliary cell to current and voltage signature determined from a reference cell similar to the auxiliary cell and operated under controlled conditions over a wide range of CO-concentrations in the H{sub 2} fuel stream. 4 figs.

Pattern recognition monitoring of PEM fuel cell

DOEpatents

Meltser, Mark Alexander

1999-01-01

The CO-concentration in the H.sub.2 feed stream to a PEM fuel cell stack is monitored by measuring current and voltage behavior patterns from an auxiliary cell attached to the end of the stack. The auxiliary cell is connected to the same oxygen and hydrogen feed manifolds that supply the stack, and discharges through a constant load. Pattern recognition software compares the current and voltage patterns from the auxiliary cell to current and voltage signature determined from a reference cell similar to the auxiliary cell and operated under controlled conditions over a wide range of CO-concentrations in the H.sub.2 fuel stream.

Method and apparatus for remote tube crevice detection by current and voltage probe resistance measurement

DOEpatents

Kikta, Thomas J.; Mitchell, Ronald D.

1992-01-01

A method and apparatus for determining the extent of contact between an electrically conducting tube and an electrically conductive tubesheet surrounding the tube, based upon the electrical resistance of the tube and tubesheet. A constant current source is applied to the interior of the electrically conducting tube by probes and a voltmeter is connected between other probes to measure the voltage at the point of current injection, which is inversely proportional to the amount of contact between the tube and tubesheet. Namely, the higher the voltage measured by the voltmeter, the less contact between the tube and tubesheet.

Method and apparatus for remote tube crevice detection by current and voltage probe resistance measurement

DOEpatents

Kikta, T.J.; Mitchell, R.D.

1992-11-24

A method and apparatus for determining the extent of contact between an electrically conducting tube and an electrically conductive tubesheet surrounding the tube, based upon the electrical resistance of the tube and tubesheet. A constant current source is applied to the interior of the electrically conducting tube by probes and a voltmeter is connected between other probes to measure the voltage at the point of current injection, which is inversely proportional to the amount of contact between the tube and tubesheet. Namely, the higher the voltage measured by the voltmeter, the less contact between the tube and tubesheet. 4 figs.

Effects of voltage control in utility interactive dispersed storage and generation systems

NASA Technical Reports Server (NTRS)

Kirkham, H.; Das, R.

1983-01-01

When a small generator is connected to the distribution system, the voltage at the point of interconnection is determined largely by the system and not the generator. The effect on the generator, on the load voltage and on the distribution system of a number of different voltage control strategies in the generator is examined. Synchronous generators with three kinds of exciter control are considered, as well as induction generators and dc/ac inverters, with and without capacitor compensation. The effect of varying input power during operation (which may be experienced by generators based on renewable resources) is explored, as well as the effect of connecting and disconnecting the generator at ten percent of its rated power. Operation with a constant slightly lagging factor is shown to have some advantages.

Origin of terminal voltage variations due to self-mixing in terahertz frequency quantum cascade lasers.

PubMed

Grier, Andrew; Dean, Paul; Valavanis, Alexander; Keeley, James; Kundu, Iman; Cooper, Jonathan D; Agnew, Gary; Taimre, Thomas; Lim, Yah Leng; Bertling, Karl; Rakić, Aleksandar D; Li, Lianhe H; Harrison, Paul; Linfield, Edmund H; Ikonić, Zoran; Davies, A Giles; Indjin, Dragan

2016-09-19

We explain the origin of voltage variations due to self-mixing in a terahertz (THz) frequency quantum cascade laser (QCL) using an extended density matrix (DM) approach. Our DM model allows calculation of both the current-voltage (I-V) and optical power characteristics of the QCL under optical feedback by changing the cavity loss, to which the gain of the active region is clamped. The variation of intra-cavity field strength necessary to achieve gain clamping, and the corresponding change in bias required to maintain a constant current density through the heterostructure is then calculated. Strong enhancement of the self-mixing voltage signal due to non-linearity of the (I-V) characteristics is predicted and confirmed experimentally in an exemplar 2.6 THz bound-to-continuum QCL.

Practical polarization maintaining optical fibre temperature sensor for harsh environment application

NASA Astrophysics Data System (ADS)

Yang, Yuanhong; Xia, Haiyun; Jin, Wei

2007-10-01

A reflection spot temperature sensor was proposed based on the polarization mode interference in polarization maintaining optical fibre (PMF) and the phenomenon that the propagation constant difference of the two orthogonal polarization modes in stressing structures PMF is sensitive to temperature and the sensing equation was obtained. In this temperature sensor, a broadband source was used to suppress the drift due to polarization coupling in lead-in/lead-out PMF. A characteristic and performance investigation proved this sensor to be practical, flexible and precise. Experimental results fitted the theory model very well and the noise-limited minimum detectable temperature variation is less than 0.01 °C. The electric arc processing was investigated and the differential propagation constant modifying the PMF probe is performed. For the demand of field hot-spot monitoring of huge power transformers, a remote multi-channel temperature sensor prototype has been made and tested. Specially coated Panda PMF that can stand high temperatures up to 250 °C was fabricated and used as probe fibres. The sensor probes were sealed within thin quartz tubes that have high voltage insulation and can work in a hot oil and vapour environment. Test results show that the accuracy of the system is better than ±0.5 °C within 0 °C to 200 °C.

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

NASA Technical Reports Server (NTRS)

Liu, David (Donhang)

2011-01-01

Steady step surge testing (SSST) is widely applied to screen out potential power-on failures in solid tantalum capacitors. The test simulates the power supply's on and off characteristics. Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors for decoupling applications. On the other hand, the SSST can also be reviewed as an electrically destructive test under a time-varying stress. It consists of rapidly charging the capacitor with incremental voltage increases, through a low resistance in series, until the capacitor under test is electrically shorted. Highly accelerated life testing (HALT) is usually a time-efficient method for determining the failure mechanism in capacitors; however, a destructive test under a time-varying stress like SSST is even more effective. It normally takes days to complete a HALT test, but it only takes minutes for a time-varying stress test to produce failures. The advantage of incorporating specific time-varying stress into a statistical model is significant in providing an alternative life test method for quickly revealing the failure modes in capacitors. In this paper, a time-varying stress has been incorporated into the Weibull model to characterize the failure modes. The SSST circuit and transient conditions to correctly test the capacitors is discussed. Finally, the SSST was applied for testing polymer aluminum capacitors (PA capacitors), Ta capacitors, and multi-layer ceramic capacitors with both precious metal electrode (PME) and base-metal-electrodes (BME). It appears that testing results are directly associated to the dielectric layer breakdown in PA and Ta capacitors and are independent on the capacitor values, the way the capacitors being built, and the manufactures. The testing results also reveal that ceramic capacitors exhibit breakdown voltages more than 20 times the rated voltage, and the breakdown voltages are inverse proportional to the dielectric layer thickness. The possibility of ceramic capacitors in front-end decoupling applications to block the surge noise from a power supply is also discussed.

Low Voltage Electrowetting-on-Dielectric Platform using Multi-Layer Insulators

PubMed Central

Lin, Yan-You; Evans, Randall D.; Welch, Erin; Hsu, Bang-Ning; Madison, Andrew C.; Fair, Richard B.

2010-01-01

A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300pl droplets from 140nl closed on-chip reservoirs was accomplished with as little as 11.4V solely through EWD forces, and the actuation threshold voltage was 7.2V with a 1Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135nm sputtered tantalum pentoxide (Ta2O5) and 180nm parylene C coated with 70nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage, VT, which is proportional to (t/εr)1/2, where t and εr are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200nm, 500nm, and 1µm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30pl droplets. PMID:20953362

Combinatorial approach toward high-throughput analysis of direct methanol fuel cells.

PubMed

Jiang, Rongzhong; Rong, Charles; Chu, Deryn

2005-01-01

A 40-member array of direct methanol fuel cells (with stationary fuel and convective air supplies) was generated by electrically connecting the fuel cells in series. High-throughput analysis of these fuel cells was realized by fast screening of voltages between the two terminals of a fuel cell at constant current discharge. A large number of voltage-current curves (200) were obtained by screening the voltages through multiple small-current steps. Gaussian distribution was used to statistically analyze the large number of experimental data. The standard deviation (sigma) of voltages of these fuel cells increased linearly with discharge current. The voltage-current curves at various fuel concentrations were simulated with an empirical equation of voltage versus current and a linear equation of sigma versus current. The simulated voltage-current curves fitted the experimental data well. With increasing methanol concentration from 0.5 to 4.0 M, the Tafel slope of the voltage-current curves (at sigma=0.0), changed from 28 to 91 mV.dec-1, the cell resistance from 2.91 to 0.18 Omega, and the power output from 3 to 18 mW.cm-2.

Investigation of voltage source design's for Electrical Impedance Mammography (EIM) Systems.

PubMed

Qureshi, Tabassum R; Chatwin, Chris R; Zhou, Zhou; Li, Nan; Wang, W

2012-01-01

According to Jossient, interesting characteristics of breast tissues mostly lie above 1MHz; therefore a wideband excitation source covering higher frequencies (i.e. above 1MHz) is required. The main objective of this research is to establish a feasible bandwidth envelope that can be used to design a constant EIM voltage source over a wide bandwidth with low output impedance for practical implementation. An excitation source is one of the major components in bio-impedance measurement systems. In any bio-impedance measurement system the excitation source can be achieved either by injecting current and measuring the resulting voltages, or by applying voltages and measuring the current developed. This paper describes three voltage source architectures and based on their bandwidth comparison; a differential voltage controlled voltage source (VCVS) is proposed, which can be used over a wide bandwidth (>15MHz). This paper describes the performance of the designed EIM voltage source for different load conditions and load capacitances reporting signal-to-noise ratio of approx 90dB at 10MHz frequency, signal phase and maximum of 4.75kΩ source output impedance at 10MHz. Optimum data obtained using Pspice® is used to demonstrate the high-bandwidth performance of the source.

Effect of Reduced Tube Voltage on Diagnostic Accuracy of CT Colonography.

PubMed

Futamata, Yoshihiro; Koide, Tomoaki; Ihara, Riku

2017-01-01

The normal tube voltage in computed tomography colonography (CTC) is 120 kV. Some reports indicate that the use of a low tube voltage (lower than 120 kV) technique plays a significant role in reduction of radiation dose. However, to determine whether a lower tube voltage can reduce radiation dose without compromising diagnostic accuracy, an evaluation of images that are obtained while maintaining the volume CT dose index (CTDI vol ) is required. This study investigated the effect of reduced tube voltage in CTC, without modifying radiation dose (i.e. constant CTDI vol ), on image quality. Evaluation of image quality involved the shape of the noise power spectrum, surface profiling with volume rendering (VR), and receiver operating characteristic (ROC) analysis. The shape of the noise power spectrum obtained with a tube voltage of 80 kV and 100 kV was not similar to the one produced with a tube voltage of 120 kV. Moreover, a higher standard deviation was observed on volume-rendered images that were generated using the reduced tube voltages. In addition, ROC analysis revealed a statistically significant drop in diagnostic accuracy with reduced tube voltage, revealing that the modification of tube voltage affects volume-rendered images. The results of this study suggest that reduction of tube voltage in CTC, so as to reduce radiation dose, affects image quality and diagnostic accuracy.

Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP.

PubMed

Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

2010-11-01

A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy transfer) signal. Here we report sensing current measurements from VSFP2.3, and show that VSFP2.3 carries 1.2 e sensing charges, which are displaced within 1.5 ms. The sensing currents become faster at higher temperatures, and the voltage dependence of the decay time constants is temperature dependent. Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing mechanism of Ci-VSP, which will allow us to further improve the sensitivity and kinetics of the family of VSFP proteins.

Application of the Modified Compaction Material Model to the Analysis of Landmine Detonation in Soil with Various Degrees of Water Saturation

DTIC Science & Technology

2007-01-01

Equation of State R2 – Constant in JWL Equation of State σ – Yield Stress T – Temperature...v – Specific volume w – Constant in JWL Equation of State x – Spatial coordinate y – Spatial coordinate Y – Yield stress Subscripts Comp – Value at...Constant in JWL Equation of State α – Porosity B – Compaction Modulus B1 – Strain Hardening Constant B2 – Constant in JWL Equation of State

Crack Branching and Fracture Mirror Data of Glasses and Advanced Ceramics

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Gyekenyesi, John P.

1998-01-01

The fracture mirror and crack branching constants were determined from three glasses and nine advanced ceramics tested under various loading and specimen configurations in an attempt to use the constants as a data base for fractography. The ratios of fracture mirror or crack branching constant to fracture toughness were found to be approximately two for most ceramic materials tested. A demonstration of how to use the two constants as a tool for verifying stress measurements was presented for silicon nitride disk specimens subjected to high-temperature, constant stress-rate biaxial flexure testing.

A comparison of constant-load and constant-deflection stress-corrosion tests on precracked DCB specimens. [Double Cantilever Beam

NASA Technical Reports Server (NTRS)

Dorward, R. C.; Hasse, K. R.

1978-01-01

A comparison is made between measurements of stress-corrosion crack propagation made by a constant-load procedure and by a constant-deflection procedure. Precracked double cantilever beam specimens from 7075 aluminum alloy plate were used. The specimens were oriented in such a way that cracking would begin in the short-transverse plane and would propagate in the rolling direction. The specimens were subjected to a buffered salt-chromate solution and a 3.6% synthetic sea salt solution. The measurements were made optically with a binocular microscope. Stress intensities and crack lengths were calculated and crack velocities were obtained. Velocity was plotted against the average calculated stress intensity. Good agreement between the two methods was found for the salt-chromate solution, although some descrepancies were noted for the artificial sea salt solution.

Accelerated Testing Methodology for the Determination of Slow Crack Growth of Advanced Ceramics

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Salem, Jonathan A.; Gyekenyesi, John P.

1997-01-01

Constant stress-rate (dynamic fatigue) testing has been used for several decades to characterize slow crack growth behavior of glass and ceramics at both ambient and elevated temperatures. The advantage of constant stress-rate testing over other methods lies in its simplicity: Strengths are measured in a routine manner at four or more stress rates by applying a constant crosshead speed or constant loading rate. The slow crack growth parameters (n and A) required for design can be estimated from a relationship between strength and stress rate. With the proper use of preloading in constant stress-rate testing, an appreciable saving of test time can be achieved. If a preload corresponding to 50 % of the strength is applied to the specimen prior to testing, 50 % of the test time can be saved as long as the strength remains unchanged regardless of the applied preload. In fact, it has been a common, empirical practice in strength testing of ceramics or optical fibers to apply some preloading (less then 40%). The purpose of this work is to study the effect of preloading on the strength to lay a theoretical foundation on such an empirical practice. For this purpose, analytical and numerical solutions of strength as a function of preloading were developed. To verify the solution, constant stress-rate testing using glass and alumina at room temperature and alumina silicon nitride, and silicon carbide at elevated temperatures was conducted in a range of preloadings from O to 90 %.

Interfacial fields in organic field-effect transistors and sensors

NASA Astrophysics Data System (ADS)

Dawidczyk, Thomas J.

Organic electronics are currently being commercialized and present a viable alternative to conventional electronics. These organic materials offer the ability to chemically manipulate the molecule, allowing for more facile mass processing techniques, which in turn reduces the cost. One application where organic semiconductors (OSCs) are being investigated is sensors. This work evaluates an assortment of n- and p-channel semiconductors as organic field-effect transistor (OFET) sensors. The sensor responses to dinitrotoluene (DNT) vapor and solid along with trinitrotoluene (TNT) solid were studied. Different semiconductor materials give different magnitude and direction of electrical current response upon exposure to DNT. Additional OFET parameters---mobility and threshold voltage---further refine the response to the DNT with each OFET sensor requiring a certain gate voltage for an optimized response to the vapor. The pattern of responses has sufficient diversity to distinguish DNT from other vapors. To effectively use these OFET sensors in a circuit, the threshold voltage needs to be tuned for each transistor to increase the efficiency of the circuit and maximize the sensor response. The threshold voltage can be altered by embedding charges into the dielectric layer of the OFET. To study the quantity and energy of charges needed to alter the threshold voltage, charge carriers were injected into polystyrene (PS) and investigated with scanning Kelvin probe microscopy (SKPM) and thermally stimulated discharge current (TSDC). Lateral heterojunctions of pentacene/PS were scanned using SKPM, effectively observing polarization along a side view of a lateral nonvolatile organic field-effect transistor dielectric interface. TSDC was used to observe charge migration out of PS films and to estimate the trap energy level inside the PS, using the initial rise method. The process was further refined to create lateral heterojunctions that were actual working OFETs, consisting of a PS or poly (3-trifluoro)styrene (F-PS) gate dielectric and a pentacene OSC. The charge storage inside the dielectric was visualized with SKPM, correlated to a threshold voltage shift in the transistor operation, and related to bias stress as well. The SKPM method allows the dielectric/OSC interface of the OFET to be visualized without any alteration of the OFET. Furthermore, this technique allows for the observation of charge distribution between the two dielectric interfaces, PS and F-PS. The SKPM is used to visualize the charge from conventional gate biasing and also as a result of embedding charges deliberately into the dielectric to shift the threshold voltage. Conventional gate biasing shows considerable residual charge in the PS dielectric, which results in gate bias stress. Gate bias stress is one of the major hurdles left in the commercialization of OFETs. To prevent this bias stress, additives of different energy levels were inserted into the dielectric to limit the gate bias stress. Additionally, the dielectrics were pre-charged to try and prevent further bias stress. Neither pre-charging the dielectric or the addition of additive has been used in gate bias prevention, but both methods offer improved resistance to gate bias stress, and help to further refine the dielectric design.

Breakdown phenomena in radio-frequency helium microdischarges

NASA Astrophysics Data System (ADS)

Radmilovic-Radjenovic, M.; Radjenovic, B.; Nina, A.

2008-07-01

In this paper, the Kihara equation has been applied in order to determine the breakdown voltage in helium rf microdischarges. It was found that the Kihara equation, with modified moleculer constants, describes the breakdown process well even for gaps of the order of a few millimeters. A good agreement between numerical solutions of the Kihara equation and the available experimental data reveals that the breakdown voltages depend on the pd product and vary substantially with changes in rf frequencies.

PZT/PLZT - elastomer composites with improved piezoelectric voltage coefficient

NASA Astrophysics Data System (ADS)

Harikrishnan, K.; Bavbande, D. V.; Mohan, Dhirendra; Manoharan, B.; Prasad, M. R. S.; Kalyanakrishnan, G.

2018-02-01

Lead Zirconate Titanate (PZT) and Lanthanum-modified Lead Zirconate Titanate (PLZT) ceramic sensor materials are widely used because of their excellent piezoelectric coefficients. These materials are brittle, high density and have low achievable piezoelectric voltage coefficients. The density of the sintered ceramics shall be reduced by burnable polymeric sponge method. The achievable porosity level in this case is nearly 60 - 90%. However, the porous ceramic structure with 3-3 connectivity produced by this method is very fragile in nature. The strength of the porous structure is improved with Sylgard®-184 (silicone elastomer) by vacuum impregnation method maintaining the dynamic vacuum level in the range of -650 mm Hg. The elastomer Sylgard®-184 is having low density, low dielectric constant and high compliance (as a resultant stiffness of the composites is increased). To obtain a net dipole moment, the impregnated ceramic composites were subjected to poling treatment with varying conditions of D.C. field and temperature. The properties of the poled PZT/PLZT - elastomer composites were characterized with LCR meter for measuring the dielectric constant values (k), d33 meter used for measuring piezo-electric charge coefficient values (d33) and piezo-electric voltage coefficient (g33) values which were derived from d33 values. The voltage coefficient (g33) values of these composites are increased by 10 fold as compared to the conventional solid ceramics demonstrates that it is possible to fabricate a conformable detector.

Fluorescent Protein Voltage Probes Derived from ArcLight that Respond to Membrane Voltage Changes with Fast Kinetics

PubMed Central

Han, Zhou; Jin, Lei; Platisa, Jelena; Cohen, Lawrence B.; Baker, Bradley J.; Pieribone, Vincent A.

2013-01-01

We previously reported the discovery of a fluorescent protein voltage probe, ArcLight, and its derivatives that exhibit large changes in fluorescence intensity in response to changes of plasma membrane voltage. ArcLight allows the reliable detection of single action potentials and sub-threshold activities in individual neurons and dendrites. The response kinetics of ArcLight (τ1-on ~10 ms, τ2-on ~ 50 ms) are comparable with most published genetically-encoded voltage probes. However, probes using voltage-sensing domains other than that from the Ciona intestinalis voltage sensitive phosphatase exhibit faster kinetics. Here we report new versions of ArcLight, in which the Ciona voltage-sensing domain was replaced with those from chicken, zebrafish, frog, mouse or human. We found that the chicken and zebrafish-based ArcLight exhibit faster kinetics, with a time constant (τ) less than 6ms for a 100 mV depolarization. Although the response amplitude of these two probes (8-9%) is not as large as the Ciona-based ArcLight (~35%), they are better at reporting action potentials from cultured neurons at higher frequency. In contrast, probes based on frog, mouse and human voltage sensing domains were either slower than the Ciona-based ArcLight or had very small signals. PMID:24312287

The properties of single cones isolated from the tiger salamander retina

PubMed Central

Attwell, David; Werblin, Frank S.; Wilson, Martin

1982-01-01

1. The properties of isolated single cones were studied using the voltage-clamp technique, with two micro-electrodes inserted under visual control. 2. Single cones had input resistances, when impaled with two electrodes, of up to 270 MΩ. This is probably lower than the true membrane resistance, because of damage by the impaling electrodes. The cone capacitance was about 85 pF. 3. The cone membrane contains a time-dependent current, IB, controlled by voltage, and a separate photosensitive current. 4. The gated current, IB, is an inward current with a reversal potential around -25 mV. It is activated by hyperpolarization over the range -30 to -80 mV, and at constant voltage obeys first order (exponential) kinetics. The gating time constant is typically 50 ms at the resting potential of -45 mV, rises to 170 ms at -70 mV, and decreases for further hyperpolarization. 5. The spectral sensitivity curve of the cone light response peaks at 620 nm wave-length, and is narrower than the nomogram for vitamin A2-based pigments. The light responses of isolated cones are spectrally univariant. 6. Voltage-clamped photocurrents were recorded at various membrane potentials, for light steps of various intensities. The photocurrent reversed at around -8 mV. The time course of the photocurrent, for a given intensity, was approximately independent of voltage (although its magnitude was voltage-dependent). The shape of the peak current—voltage relation of the light-sensitive current was independent of light intensity (although its magnitude was intensity-dependent). 7. These results can be explained if: (a) light simply changes the number of photosensitive channels open, without altering the properties of an open channel; (b) the reactions controlling the production of internal transmitter, the binding of internal transmitter to the photosensitive channels, and the closing and opening of the channels are unaffected by the electric field in the cone membrane, even though at least some of these reactions take place in the membrane. 8. IB plays only a small role in shaping the cone voltage response to light. ImagesPlate 1 PMID:7131315

Design of single-winding energy-storage reactors for dc-to-dc converters using air-gapped magnetic-core structures

NASA Technical Reports Server (NTRS)

Ohri, A. K.; Wilson, T. G.; Owen, H. A., Jr.

1977-01-01

A procedure is presented for designing air-gapped energy-storage reactors for nine different dc-to-dc converters resulting from combinations of three single-winding power stages for voltage stepup, current stepup and voltage stepup/current stepup and three controllers with control laws that impose constant-frequency, constant transistor on-time and constant transistor off-time operation. The analysis, based on the energy-transfer requirement of the reactor, leads to a simple relationship for the required minimum volume of the air gap. Determination of this minimum air gap volume then permits the selection of either an air gap or a cross-sectional core area. Having picked one parameter, the minimum value of the other immediately leads to selection of the physical magnetic structure. Other analytically derived equations are used to obtain values for the required turns, the inductance, and the maximum rms winding current. The design procedure is applicable to a wide range of magnetic material characteristics and physical configurations for the air-gapped magnetic structure.

Design, fabrication, and properties of 2-2 connectivity cement/polymer based piezoelectric composites with varied piezoelectric phase distribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dongyu, Xu; Department of Mechanical Engineering, University of South Carolina, Columbia, South Carolina 29208; Xin, Cheng

2014-12-28

The laminated 2-2 connectivity cement/polymer based piezoelectric composites with varied piezoelectric phase distribution were fabricated by employing Lead Zirconium Titanate ceramic as active phase, and mixture of cement powder, epoxy resin, and hardener as matrix phase with a mass proportion of 4:4:1. The dielectric, piezoelectric, and electromechanical coupling properties of the composites were studied. The composites with large total volume fraction of piezoelectric phase have large piezoelectric strain constant and relative permittivity, and the piezoelectric and dielectric properties of the composites are independent of the dimensional variations of the piezoelectric ceramic layer. The composites with small total volume fraction ofmore » piezoelectric phase have large piezoelectric voltage constant, but also large dielectric loss. The composite with gradually increased dimension of piezoelectric ceramic layer has the smallest dielectric loss, and that with the gradually increased dimension of matrix layer has the largest piezoelectric voltage constant. The novel piezoelectric composites show potential applications in fabricating ultrasonic transducers with varied surface vibration amplitude of the transducer.« less

Notes on Experiments.

ERIC Educational Resources Information Center

Physics Education, 1982

1982-01-01

Describes: (1) an apparatus which provides a simple method for measuring Stefan's constant; (2) a simple phase shifting circuit; (3) a radioactive decay computer program (for ZX81); and (4) phase difference between transformer voltages. (Author/JN)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, P.; Terwilliger, K.; Koch, S.

Three crystalline silicon module designs were distributed in five replicas each to five laboratories for testing according to the IEC 62804 (Committee Draft) system voltage durability qualification test for crystalline silicon photovoltaic (PV) modules. The stress tests were performed in environmental chambers at 60 degrees C, 85% relative humidity, 96 h, and with module nameplate system voltage applied.

Computer acquired performance data from an etched-rhenium, molybdenum planar diode

NASA Technical Reports Server (NTRS)

Manista, E. J.

1972-01-01

Performance data from an etched-rhenium, molybdenum thermionic converter are presented. The planar converter has a guard-ringed collector and a fixed spacing of 0.254 mm (10 mils). The data were acquired by using a computer and are available on microfiche as individual or composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E, collector T sub C and cesium reservoir T sub R. The composite plots have constant T sub E, and varying T sub C or T sub R, or both. The envelope and composite plots having constant I sub E are presented. The diode was tested at increments between 1500 and 2000 K for the emitter, 750 and 1100 K for the collector, and 540 and 640 K for the reservoir. In all, 774 individual current, voltage curves were obtained.

Influence of the piezoelectric parameters on the dynamics of an active rotor

NASA Astrophysics Data System (ADS)

Gawryluk, Jarosław; Mitura, Andrzej; Teter, Andrzej

2018-01-01

The main aim of this paper is an experimental and numerical analysis of the dynamic behavior of an active rotor with three composite blades. The study focuses on developing an effective FE modeling technique of a macro fiber composite element (denoted as MFC or active element) for the dynamic tests of active structures. The active rotor under consideration consists of a hub with a drive shaft, three grips and three glass-epoxy laminate blades with embedded active elements. A simplified FE model of the macro fiber composite element exhibiting the d33 piezoelectric effect is developed using the Abaqus software package. The discussed transducer is modeled as quasi-homogeneous piezoelectric material, and voltage is applied to the opposite faces of the element. In this case, the effective (equivalent) piezoelectric constant d33* is specified. Both static and dynamic tests are performed to verify the proposed model. First, static deflections of the active blade caused by the voltage signal are determined by numerical and experimental analyses. Next, a numerical modal analysis of the active rotor is performed. The eigenmodes and corresponding eigenfrequencies are determined by the Lanczos method. The influence of the model parameters (i.e., the effective piezoelectric constant d33 *, voltage signal, angular velocity) on the dynamics of the active rotor is examined. Finally, selected numerical results are validated in experimental tests. The experimental findings demonstrate that the structural stiffening effect caused by the active element strongly depends on the value of the effective piezoelectric constant.

Tunable surface plasmon devices

DOEpatents

Shaner, Eric A [Rio Rancho, NM; Wasserman, Daniel [Lowell, MA

2011-08-30

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

Base metal thermocouples drift rate dependence from thermoelement diameter

NASA Astrophysics Data System (ADS)

Pavlasek, P.; Duris, S.; Palencar, R.

2015-02-01

Temperature measurements are one of the key factors in many industrial applications that directly affect the quality, effectiveness and safety of manufacturing processes. In many industrial applications these temperature measurements are realized by thermocouples. Accuracy of thermocouples directly affects the quality of the final product of manufacturing and their durability determines the safety margins required. One of the significant effects that affect the precision of the thermocouples is short and long term stability of their voltage output. This stability issue occurs in every type of thermocouples and is caused by multiple factors. In general these factors affect the Seebeck coefficient which is a material constant, which determines the level of generated voltage when exposed to a temperature gradient. Changes of this constant result in the change of the thermocouples voltage output thus indicated temperature which can result in production quality issues, safety and health hazards. These alternations can be caused by physical and chemical changes within the thermocouple lead material. Modification of this material constant can be of temporary nature or permanent. This paper concentrates on the permanent, or irreversible changes of the Seebeck coefficient that occur in commonly used swaged MIMS Type N thermocouples. These permanent changes can be seen as systematic change of the EMF of the thermocouple when it is exposed to a high temperature over a period of time. This change of EMF by time is commonly known as the drift of the thermocouple. This work deals with the time instability of thermocouples EMF at temperatures above 1200 °C. Instability of the output voltage was taken into relation with the lead diameter of the tested thermocouples. This paper concentrates in detail on the change of voltage output of thermocouples of different diameters which were tested at high temperatures for the overall period of more than 210 hours. The gather data from this testing was used to establish the relation between the level of EMF drift and the lead diameter of the thermocouple thermoelements. Furthermore this data was also used to create a drift function which mathematically expresses the dependency between the drift rate and the diameter of the thermocouple leads.

Slow Crack Growth of Brittle Materials With Exponential Crack-Velocity Formulation. Part 3; Constant Stress and Cyclic Stress Experiments

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Nemeth, Noel N.; Gyekenyesi, John P.

2002-01-01

The previously determined life prediction analysis based on an exponential crack-velocity formulation was examined using a variety of experimental data on advanced structural ceramics tested under constant stress and cyclic stress loading at ambient and elevated temperatures. The data fit to the relation between the time to failure and applied stress (or maximum applied stress in cyclic loading) was very reasonable for most of the materials studied. It was also found that life prediction for cyclic stress loading from data of constant stress loading in the exponential formulation was in good agreement with the experimental data, resulting in a similar degree of accuracy as compared with the power-law formulation. The major limitation in the exponential crack-velocity formulation, however, was that the inert strength of a material must be known a priori to evaluate the important slow-crack-growth (SCG) parameter n, a significant drawback as compared with the conventional power-law crack-velocity formulation.

Stress induced magnetic-domain evolution in magnetoelectric composites

NASA Astrophysics Data System (ADS)

Trivedi, Harsh; Shvartsman, Vladimir V.; Lupascu, Doru C.; Medeiros, Marco S. A.; Pullar, Robert C.

2018-06-01

Local observation of the stress mediated magnetoelectric (ME) effect in composites has gained a great deal of interest over the last decades. However, there is an apparent lack of rigorous methods for a quantitative characterization of the ME effect at the local scale, especially in polycrystalline microstructures. In the present work, we address this issue by locally probing the surface magnetic state of barium titante–hexagonal barium ferrite (BaTiO3–BaFe12O19) ceramic composites using magnetic force microscopy (MFM). The effect of the piezoelectrically induced local stress on the magnetostrictive component (BaFe12O19, BaM) was observed in the form of the evolution of the magnetic domains. The local piezoelectric stress was induced by applying a voltage to the neighboring BaTiO3 grains, using a conductive atomic force microscopy tip. The resulting stochastic evolution of magnetic domains was studied in the context of the induced magnetoelastic anisotropy. In order to overcome the ambiguity in the domain changes observed by MFM, certain generalizations about the observed MFM contrast are put forward, followed by application of an algorithm for extracting the average micromagnetic changes. An average change in domain wall thickness of 50 nm was extracted, giving a lower limit on the corresponding induced magnetoelastic anisotropy energy. Furthermore, we demonstrate that this induced magnetomechanical energy is approximately equal to the K1 magnetocrystalline anisotropy constant of BaM, and compare it with a modeled value of applied elastic energy density. The comparison allowed us to judge the quality of the interfaces in the composite system, by roughly gauging the energy conversion ratio.

Energy consumption analysis of constant voltage and constant current operations in capacitive deionization

DOE PAGES

Qu, Yatian; Campbell, Patrick G.; Gu, Lei; ...

2016-09-21

Here we report our studies to compare energy consumption of a CDI cell in constant voltage (CV) and constant current (CC) operations, with a focus on understanding the underlying physics of consumption patterns. The comparison is conducted under conditions that the CV and CC operations result in the same amounts of input charge and within identical charging phase durations. We present two electrical circuit models to simulate energy consumption in charging phase: one is a simple RC circuit model, and the other a transmission line circuit model. We built and tested a CDI cell to validate the transmission line model,more » and performed a series of experiments to compare CV versus CC operation under the condition of equal applied charge and charging duration. The experiments show that CC mode consumes energy at 33.8 kJ per mole of ions removed, which is only 28% of CV mode energy consumption (120.6 kJ/mol), but achieves similar level of salt removals. Lastly, together, the models and experiment support our major conclusion that CC is more energy efficient than CV for equal charge and charging duration. The models also suggest that the lower energy consumption of CC in charging is due to its lower resistive dissipation.« less

Electric Machine with Boosted Inductance to Stabilize Current Control

NASA Technical Reports Server (NTRS)

Abel, Steve

2013-01-01

High-powered motors typically have very low resistance and inductance (R and L) in their windings. This makes the pulse-width modulated (PWM) control of the current very difficult, especially when the bus voltage (V) is high. These R and L values are dictated by the motor size, torque (Kt), and back-emf (Kb) constants. These constants are in turn set by the voltage and the actuation torque-speed requirements. This problem is often addressed by placing inductive chokes within the controller. This approach is undesirable in that space is taken and heat is added to the controller. By keeping the same motor frame, reducing the wire size, and placing a correspondingly larger number of turns in each slot, the resistance, inductance, torque constant, and back-emf constant are all increased. The increased inductance aids the current control but ruins the Kt and Kb selections. If, however, a fraction of the turns is moved from their "correct slot" to an "incorrect slot," the increased R and L values are retained, but the Kt and Kb values are restored to the desired values. This approach assumes that increased resistance is acceptable to a degree. In effect, the heat allocated to the added inductance has been moved from the controller to the motor body, which in some cases is preferred.

Energy consumption analysis of constant voltage and constant current operations in capacitive deionization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qu, Yatian; Campbell, Patrick G.; Gu, Lei

Here we report our studies to compare energy consumption of a CDI cell in constant voltage (CV) and constant current (CC) operations, with a focus on understanding the underlying physics of consumption patterns. The comparison is conducted under conditions that the CV and CC operations result in the same amounts of input charge and within identical charging phase durations. We present two electrical circuit models to simulate energy consumption in charging phase: one is a simple RC circuit model, and the other a transmission line circuit model. We built and tested a CDI cell to validate the transmission line model,more » and performed a series of experiments to compare CV versus CC operation under the condition of equal applied charge and charging duration. The experiments show that CC mode consumes energy at 33.8 kJ per mole of ions removed, which is only 28% of CV mode energy consumption (120.6 kJ/mol), but achieves similar level of salt removals. Lastly, together, the models and experiment support our major conclusion that CC is more energy efficient than CV for equal charge and charging duration. The models also suggest that the lower energy consumption of CC in charging is due to its lower resistive dissipation.« less

A study of stress-induced electrical noise in thin wires of iron-based alloys

NASA Astrophysics Data System (ADS)

Segales, Lyndon Duarte

Electrical noise measurements are utilized in many studies of fluctuation phenomena because they have shown to be useful in extracting information on slow kinetic processes. Slow moving random fluctuations that occur in solids will either affect the current in the sample or the resistivity of the sample, thereby creating electrical noise. The noise is analyzed in the frequency domain for its statistical variables. In the past twenty years, noise measurements on samples under stress have received considerable interests because the method is non-destructive and they provide some insight into the mechanical dynamics of materials not available to other conventional methods. The dynamics of the fluctuation in response to the applied stress, however, has not been clearly identified in recent studies. Most of these studies were performed on thin films of metals and their broadband 1/f noise was analyzed in response to stress. A narrowband stress-induced electrical noise in thin wires of iron-based alloys under tensile stress will be presented in the results of this thesis. The voltage noise displayed narrowband peaks in the low frequency region of the power spectrum that were ˜104 times the background noise. The electrical response to stress was analyzed in terms of the root mean squared (rms) voltage (Vrms) of the noise signal over a 50 Hz bandwidth. The information obtained from such measurements is independent of other non-destructive testing methods and is therefore a useful probe of the stress-strain dynamics in metals and alloys. The magnitude of the voltage noise as function of stress and temperature displayed a maximum over a narrow range. This is a qualitative indication of an activation process, similar to the maxima observed in studies of internal friction as a function of temperature. It is proposed that this noise signal is due to piezo resistance fluctuations as a result of stress-induced re-orientation of defects, similar to the Zener relaxation of solute atoms in a solid solution.

Active control of flexural vibrations in beams

NASA Technical Reports Server (NTRS)

Gerhold, Carl H.

1987-01-01

The feasibility of using piezoelectric actuators to control the flexural oscillations of large structures in space is investigated. Flexural oscillations are excited by impulsive loads. The vibratory response can degrade the pointing accuracy of cameras and antennae, and can cause high stresses at structural node points. Piezoelectric actuators have the advantage of exerting localized bending moments. In this way, vibration is controlled without exciting rigid body modes. The actuators are used in collocated sensor/driver pairs to form a feedback control system. The sensor produces a voltage that is proportional to the dynamic stress at the sensor location, and the driver produces a force that is proportional to the voltage applied to it. The analog control system amplifies and phase shifts the sensor signal to produce the voltage signal that is applied to the driver. The feedback control is demonstrated to increase the first mode damping in a cantilever beam by up to 100 percent, depending on the amplifier gain. The damping efficiency of the control system when the piezoelectrics are not optimally positioned at points of high stress in the beam is evaluated.

The Breakdown Characteristics of the Silicone Oil for Electric Power Apparatus

NASA Astrophysics Data System (ADS)

Yoshida, Hisashi; Yanabu, Satoru

The basic breakdown characteristics of the silicone oil as an insulating medium was studied with aim of realization of electric power apparatus which may be considered to be SF6 free and flame-retarding. As the first step, the impulse breakdown characteristics was measured with three kinds of electrodes whose electric field distributions differed. The breakdown characteristics in silicone oil was explained in relation to stressed oil volume (SOV) and the breakdown stress. At the second step the surface breakdown characteristic for impulse voltage was measured with two kinds of insulators which was set to between plane electrodes. The surface breakdown characteristic for impulse voltage was explained in relation to the ratio of the relative permittivity of oil and insulator. And on the third step, the breakdown characteristics of oil gap after interrupting small capacitive current was studied. In this experiment, the disconnecting switch to interrupt capacitive current was simulated by oil gap after interrupting impulse current, and to measure breakdown characteristics the high impulse voltage was subsequently applied. The breakdown stress in silicone oil after application of impulse current was discussed for insulation recovery characteristics.

Cold-Rolled Strip Steel Stress Detection Technology Based on a Magnetoresistance Sensor and the Magnetoelastic Effect

PubMed Central

Guan, Ben; Zang, Yong; Han, Xiaohui; Zheng, Kailun

2018-01-01

Driven by the demands for contactless stress detection, technologies are being used for shape control when producing cold-rolled strips. This paper presents a novel contactless stress detection technology based on a magnetoresistance sensor and the magnetoelastic effect, enabling the detection of internal stress in manufactured cold-rolled strips. An experimental device was designed and produced. Characteristics of this detection technology were investigated through experiments assisted by theoretical analysis. Theoretically, a linear correlation exists between the internal stress of strip steel and the voltage output of a magneto-resistive sensor. Therefore, for this stress detection system, the sensitivity of the stress detection was adjusted by adjusting the supply voltage of the magnetoresistance sensor, detection distance, and other relevant parameters. The stress detection experimental results showed that this detection system has good repeatability and linearity. The detection error was controlled within 1.5%. Moreover, the intrinsic factors of the detected strip steel, including thickness, carbon percentage, and crystal orientation, also affected the sensitivity of the detection system. The detection technology proposed in this research enables online contactless detection and meets the requirements for cold-rolled steel strips. PMID:29883387

Cold-Rolled Strip Steel Stress Detection Technology Based on a Magnetoresistance Sensor and the Magnetoelastic Effect.

PubMed

Guan, Ben; Zang, Yong; Han, Xiaohui; Zheng, Kailun

2018-05-21

Driven by the demands for contactless stress detection, technologies are being used for shape control when producing cold-rolled strips. This paper presents a novel contactless stress detection technology based on a magnetoresistance sensor and the magnetoelastic effect, enabling the detection of internal stress in manufactured cold-rolled strips. An experimental device was designed and produced. Characteristics of this detection technology were investigated through experiments assisted by theoretical analysis. Theoretically, a linear correlation exists between the internal stress of strip steel and the voltage output of a magneto-resistive sensor. Therefore, for this stress detection system, the sensitivity of the stress detection was adjusted by adjusting the supply voltage of the magnetoresistance sensor, detection distance, and other relevant parameters. The stress detection experimental results showed that this detection system has good repeatability and linearity. The detection error was controlled within 1.5%. Moreover, the intrinsic factors of the detected strip steel, including thickness, carbon percentage, and crystal orientation, also affected the sensitivity of the detection system. The detection technology proposed in this research enables online contactless detection and meets the requirements for cold-rolled steel strips.

Nanomechanics modeling of carbon nanotubes interacting with surfaces in various configurations

NASA Astrophysics Data System (ADS)

Wu, Yu-Chiao

Carbon nanotubes (CNTs) have been widely used as potential components in reported nanoelectromechanical (NEM) devices due to their excellent mechanical and electrical properties. This thesis models the experiments by the continuum mechanics in two distinct scenarios. In the first situation, measurements are made of CNT configurations after manipulations. Modeling is then used to determine the interfacial properties during the manipulation which led to the observed configuration. This technique is used to determine the shear stress between a SWNT bundle and other materials. During manipulation, a SWNT bundle slipped on two micro-cantilevers. According to the slack due to the slippage after testing and the device configuration, the shear stress between a SWNT bundle and other materials can be determined. In another model, the work of adhesion was determined on two accidentally fabricated devices. Through the configuration of two SWNT adhered bundles and the force-distance curves measured by an atomic force microscope (AFM), modeling was used to determine the work of adhesion between two bundles and the shear stress at the SWNT-substrate interface. In the second situation, modeling is used in a more traditional fashion to make theoretical predictions as to how a device will operate. Using this technique, the actuation mechanism of a single-trench SWNT-based switch was investigated. During the actuation, the deflection-induced tension causes the SWNT bundle to slip on both platforms and to be partially peeled from two side recessed electrodes. These effects produce a slack which reduces the threshold voltages subsequent to the first actuation. The result shows excellent agreement between the theory and the measurement. Furthermore, the operation of a double-trenched SWNT-based switch was investigated. A slack is produced in the 1st actuated trench region by the slip and peeling effects. This slack reduces the 2nd actuation voltage in the neighbor trench. Finally, the adhesive slip process at the SWNT-substrate interface was simulated. The result shows that the force for slip of a SWNT remains constant for lengths less than about 240 nm. Beyond that length, increasing the contact length causes increase the force for slippage. This phenomenon agrees well with reported experiments.

Investigation of reliability attributes and accelerated stress factors of terrestrial solar cells. First annual report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prince, J.L.; Lathrop, J.W.

1979-05-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, I/sub sc/, open circuit voltage, V/sub oc/, and output power, voltage, and current at the maximum power point, P/sub m/, V/sub m/, and I/sub m/ respectively. Incorporated in the report are the distributions ofmore » the prestress electrical data for all cell types. Data was also obtained on cell series and shunt resistance. Significant differences in the response to the various stress tests was observed between cell types. On the basis of the experience gained in this research work, a suggested Reliability Qualification Test Schedule was developed.« less

A new infusion pathway intactness monitoring system.

PubMed

Ogawa, Hidekuni; Yonezawa, Yoshiharu; Maki, Hiromichi; Ninomiya, Ishio; Sata, Koji; Hamada, Shingo; Caldwell, W Morton

2006-01-01

A new infusion pathway monitoring system has been developed for hospital and home use. The system consists of linear integrated circuits and a low-power 8-bit single chip microcomputer which constantly monitors the infusion pathway intactness. An AC (alternating current) voltage is induced on the patient's body by electrostatic coupling from the normal 100 volt, 60 Hz AC power line wiring field in the patient's room. The induced AC voltage can be recorded by a main electrode wrapped around the infusion polyvinyl chloride tube. A reference electrode is wrapped on the electrode to monitor the AC voltage around the main electrode. If the injection needle or infusion tube becomes detached, then the system detects changes in the induced AC voltages and alerts the nursing station, via the nurse call system or PHS (personal handy phone system).

The virtual infinite capacitor

NASA Astrophysics Data System (ADS)

Yona, Guy; Weiss, George

2017-01-01

We define the virtual infinite capacitor (VIC) as a nonlinear capacitor that has the property that for an interval of the charge Q (the operating range), the voltage V remains constant. We propose a lossless approximate realisation for the VIC as a simple circuit with two controllers: a voltage controller acts fast to maintain the desired terminal voltage, while a charge controller acts more slowly and maintains the charge Q in the desired operating range by influencing the incoming current. The VIC is useful as a filter capacitor for various applications, for example, power factor compensators (PFC), as we describe. In spite of using small capacitors, the VIC can replace a very large capacitor in applications that do not require substantial energy storage. We give simulation results for a PFC working in critical conduction mode with a VIC for output voltage filtering.

Electric-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2/oxide stacks using reduced voltage

NASA Astrophysics Data System (ADS)

Kita, Koji; Abraham, David W.; Gajek, Martin J.; Worledge, D. C.

2012-08-01

We have demonstrated purely electrical manipulation of the magnetic anisotropy of a Co0.6Fe0.2B0.2 film by applying only 8 V across the CoFeB/oxide stack. A clear transition from in-plane to perpendicular anisotropy was observed. The quantitative relationship between interface anisotropy energy and the applied electric-field was determined from the linear voltage dependence of the saturation field. By comparing the dielectric stacks of MgO/Al2O3 and MgO/HfO2/Al2O3, enhanced voltage control was also demonstrated, due to the higher dielectric constant of the HfO2. These results suggest the feasibility of purely electrical control of magnetization with small voltage bias for spintronics applications.

Methods for determining optical power, for power-normalizing laser measurements, and for stabilizing power of lasers via compliance voltage sensing

DOEpatents

Taubman, Matthew S; Phillips, Mark C

2015-04-07

A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

Ultralow-voltage design of graphene PN junction quantum reflective switch transistor

NASA Astrophysics Data System (ADS)

Sohier, Thibault; Yu, Bin

2011-05-01

We propose the concept of a graphene-based quantum reflective switch (QRS) for low-power logic application. With the unique electronic properties of graphene, a tilted PN junction is used to implement logic switch function with 103 ON/OFF ratio. Carriers are reflected on an electrostatically induced potential step with strong incidence-angle-dependency due to the widening of classically forbidden energies. Optimized design of the device for ultralow-voltage operating has been conducted. The device is constantly ON with a turning-off gate voltage around 180 mV using thin HfO2 as the gate dielectric. The results suggest a class of logic switch devices operating with micropower dissipation.

Investigation of problems associated with solid encapsulation of high voltage electronic assemblies; also Reynolds connector study

NASA Technical Reports Server (NTRS)

Bever, R. S.

1975-01-01

Electric breakdown prevention in vacuum and encapsulation of high voltage electronic circuits was studied. The lap shear method was used to measure adhesive strengths. The permeation constants of air at ambient room temperature through four different space-grade encapsulants was measured. Order of magnitude was calculated for the time that air bubble pressures drop to the corona region. High voltage connectors with L-type cable attached were tested in a vacuum system at various pressures. The cable system was shown to suppress catastrophic breakdown when filled with and surrounded by gas in the corona region of pressures, but did not prove to be completely noise free.

Self-calibrating multiplexer circuit

DOEpatents

Wahl, Chris P.

1997-01-01

A time domain multiplexer system with automatic determination of acceptable multiplexer output limits, error determination, or correction is comprised of a time domain multiplexer, a computer, a constant current source capable of at least three distinct current levels, and two series resistances employed for calibration and testing. A two point linear calibration curve defining acceptable multiplexer voltage limits may be defined by the computer by determining the voltage output of the multiplexer to very accurately known input signals developed from predetermined current levels across the series resistances. Drift in the multiplexer may be detected by the computer when the output voltage limits, expected during normal operation, are exceeded, or the relationship defined by the calibration curve is invalidated.

Design of energy-storage reactors for single-winding constant-frequency dc-to-dc converters operating in the discontinuous-reactor-current mode

NASA Technical Reports Server (NTRS)

Chen, D. Y.; Owen, H. A., Jr.; Wilson, T. G.

1980-01-01

This paper presents an algorithm and equations for designing the energy-storage reactor for dc-to-dc converters which are constrained to operate in the discontinuous-reactor-current mode. This design procedure applied to the three widely used single-winding configurations: the voltage step-up, the current step-up, and the voltage-or-current step-up converters. A numerical design example is given to illustrate the use of the design algorithm and design equations.

Correction of Thermal Gradient Errors in Stem Thermocouple Hygrometers

PubMed Central

Michel, Burlyn E.

1979-01-01

Stem thermocouple hygrometers were subjected to transient and stable thermal gradients while in contact with reference solutions of NaCl. Both dew point and psychrometric voltages were directly related to zero offset voltages, the latter reflecting the size of the thermal gradient. Although slopes were affected by absolute temperature, they were not affected by water potential. One hygrometer required a correction of 1.75 bars water potential per microvolt of zero offset, a value that was constant from 20 to 30 C. PMID:16660685

Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime

NASA Astrophysics Data System (ADS)

Cusumano, P.

2016-02-01

We report the results of lifetime DC testing at constant current of not-encapsulated organic light emitting diodes (OLEDs) based on Tris (8 idroxyquinoline) aluminum (Alq3) as emitting material. In particular, a voltage decrease during the initial stage of the lifetime test is observed. The cause of this behavior is also discussed, mainly linked to initial Joule self-heating of the device, rising its temperature above room temperature until thermal equilibrium is reached at steady state.

New Insulation Constructions for Aerospace Wiring Applications. Volume 1. Testing and Evaluation

DTIC Science & Technology

1991-06-01

28 S.3.2 CORONA INCEPTION AND EXTINCIION VOLTAGES 5 - 33 5.3.2.. AC CORONA INCEPTION AND EXTINCTION VOLTAGES 5...... - 33 5.3.2.2 DC CORONA ...SETUP ....... .. 5 - 27 5.10 DIELECTRIC CONSTANT TEST RESULTS .......... .. 5 - 32 5.11 AC CORONA INCEPTION AND EXTINCTION TEST, 22 AWG, 8.6 MIL WALL...AIRFRAME WIRE ... .......... 5 - 39 5.12 AC CORONA INCEPTION AND EXTINCTION TEST, 22 AWG, 5.8 MIL WALL, HOOK UP WIRE .... ........... 5 - 40 5.13 AC

Probabilistic Description of Fatigue Crack Growth Under Constant-and Variable-Amplitude Loading

DTIC Science & Technology

1989-03-01

plane, see figure 14. The length of the defected crack component and its angle, b and q, respectively, in Figure 15 were found to depend on the crack...length at which the defection occurs; as the crack length increases, b increases while q decreases. Due to the orientation of the deflected component...Breakpoint Voltage to Fun. Generator Output Setpoint Voltage Take Function Generator Gate High Start Test LNext page 153 Q! ~From last ag lastr DMAe 70

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajachidambaram, Meena Suhanya; Pandey, Archana; Vilayur Ganapathy, Subramanian

The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFT) have been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid (n-HPA) when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

Preparation of asymmetric porous materials

DOEpatents

Coker, Eric N [Albuquerque, NM

2012-08-07

A method for preparing an asymmetric porous material by depositing a porous material film on a flexible substrate, and applying an anisotropic stress to the porous media on the flexible substrate, where the anisotropic stress results from a stress such as an applied mechanical force, a thermal gradient, and an applied voltage, to form an asymmetric porous material.

Plastic Stress-strain Relations for 75S-T6 Aluminum Alloy Subjected to Biaxial Tensile Stresses

NASA Technical Reports Server (NTRS)

Marin, Joseph; Ulrich, B H; Hughes, W P

1951-01-01

In this investigation, the material tested was a 75S-T6 aluminum alloy and the stresses were essentially biaxial and tensile. The biaxial tensile stresses were produced in a specially designed testing machine by subjecting a thin-walled tubular specimen to axial tension and internal pressure. Plastic stress-strain relations for various biaxial stress conditions were obtained using a clip-type SR-4 strain gage. Three types of tests were made: Constant-stress-ratio tests, variable-stress-ratio tests, and special tests. The constant-stress-ratio test results gave control data and showed the influence of biaxial stresses on the yield, fracture, and ultimate strength of the material. By means of the variable-stress-ratio tests, it is possible to determine whether there is any significant difference between the flow and deformation type of theory. Finally, special tests were conducted to check specific assumptions made in the theories of plastic flow. The constant-stress-ratio tests show that the deformation theory based on the octahedral, effective; or significant stress-strain relations is in approximate agreement with the test results. The variable-stress-ratio tests show that both the deformation and flow theory are in equally good agreement with the test results.

Discharge characteristics of a needle-to-plate electrode at a micro-scale gap

NASA Astrophysics Data System (ADS)

Ronggang, WANG; Qizheng, JI; Tongkai, ZHANG; Qing, XIA; Yu, ZHANG; Jiting, OUYANG

2018-05-01

To understand the discharge characteristics under a gap of micrometers, the breakdown voltage and current–voltage curve are measured experimentally in a needle-to-plate electrode at a micro-scale gap of 3–50 μm in air. The effect of the needle radius and the gas pressure on the discharge characteristics are tested. The results show that when the gap is larger than 10 μm, the relation between the breakdown voltage and the gap looks like the Paschen curve; while below 10 μm, the breakdown voltage is nearly constant in the range of the tested gap. However, at the same gap distance, the breakdown voltage is still affected by the pressure and shows a trend similar to Paschen’s law. The current–voltage characteristic in all the gaps is similar and follows the trend of a typical Townsend-to-glow discharge. A simple model is used to explain the non-normality of breakdown in the micro-gaps. The Townsend mechanism is suggested to control the breakdown process in this configuration before the gap reduces much smaller in air.

Solutions for transients in arbitrarily branching cables: III. Voltage clamp problems.

PubMed

Major, G

1993-07-01

Branched cable voltage recording and voltage clamp analytical solutions derived in two previous papers are used to explore practical issues concerning voltage clamp. Single exponentials can be fitted reasonably well to the decay phase of clamped synaptic currents, although they contain many underlying components. The effective time constant depends on the fit interval. The smoothing effects on synaptic clamp currents of dendritic cables and series resistance are explored with a single cylinder + soma model, for inputs with different time courses. "Soma" and "cable" charging currents cannot be separated easily when the soma is much smaller than the dendrites. Subtractive soma capacitance compensation and series resistance compensation are discussed. In a hippocampal CA1 pyramidal neurone model, voltage control at most dendritic sites is extremely poor. Parameter dependencies are illustrated. The effects of series resistance compound those of dendritic cables and depend on the "effective capacitance" of the cell. Plausible combinations of parameters can cause order-of-magnitude distortions to clamp current waveform measures of simulated Schaeffer collateral inputs. These voltage clamp problems are unlikely to be solved by the use of switch clamp methods.

Multi-tunable microelectromechanical system (MEMS) resonators

DOEpatents

Stalford, Harold L [Norman, OK; Butler, Michael A [Andover, MA; Schubert, W Kent [Albuquerque, NM

2006-08-22

A method for tuning a vibratory device including a cantilevered resonator comprising the steps of increasing a voltage V.sub.0 supplied to the vibratory device to thereby increase the bandwidth of the vibratory device; and keeping the resonant frequency of the vibratory device at substantially that natural frequency of the cantilevered resonator, wherein the vibratory device comprises: a capacitor including a movable plate and a fixed plate spaced from each other, the movable plate being part of the cantilevered resonator; a voltage source connected to the capacitor for providing voltage V.sub.0 across the capacitor to produce an attractive force between movable plate and fixed plate; a circuit connecting the voltage source to the capacitor; and a load resistor in said circuit having a resistance R.sub.L satisfying the following equation: .mu..omega..times..times..lamda. ##EQU00001## where: .mu. is at least 10; .omega..sub.0 is the beam constant for the cantilevered resonator; c.sub.0 is the capacitance for the capacitor; and .lamda. is the voltage dependent coupling parameter for voltage V.sub.0.

Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

2014-11-01

The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

ARC and Melting Efficiency of Plasma ARC Welds

NASA Technical Reports Server (NTRS)

McClure, J. C.; Nunes, A. C.; Evans, D. M.

1999-01-01

A series of partial penetration Variable Polarity Plasma Arc welds were made at equal power but various combinations of current and voltage on 2219 Aluminum. Arc efficiency was measured calorimetrically and ranged between 48% and 66% for the conditions of the welds. Arc efficiency depends in different ways on voltage and current. The voltage effect dominates. Raising voltage while reducing current increases arc efficiency. Longer, higher voltage arcs are thought to transfer a greater portion of arc power to the workpiece through shield gas convection. Melting efficiency depends upon weld pool shape as well as arc efficiency. Increased current increases the melting efficiency as it increases the depth to width ratio of the weld pool. Increased plasma gas flow does the same thing. Higher currents are thought to raise arc pressure and depress liquid at the bottom of the weld pool. More arc power then transfers to the workpiece through increasing plasma gas convection. If the power is held constant, the reduced voltage lowers the arc efficiency, while the pool shape change increases the melting efficiency,

Flux-focusing eddy current probe and rotating probe method for flaw detection

NASA Astrophysics Data System (ADS)

Wincheski, Buzz A.; Fulton, James P.; Nath, Shridhar C.; Simpson, John W.; Namkung, Min

1994-11-01

A flux-focusing electromagnetic sensor which uses a ferromagnetic flux-focusing lens simplifies inspections and increases detectability of fatigue cracks about circular fasteners and other circular inhomogeneities in high conductivity material. The unique feature of the device is the ferrous shield isolating a high-turn pick-up coil from an excitation coil. The use of the magnetic shield is shown to produce a null voltage output across the receiving coil in the presence of an unflawed sample. A redistribution of the current flow in the sample caused by the presence of flaws, however, eliminates the shielding condition and a large output voltage is produced, yielding a clear unambiguous flaw signal. By rotating the probe in a path around a circular fastener such as a rivet while maintaining a constant distance between the probe and the center of a rivet, the signal due to current flow about the rivet can be held constant. Any further changes in the current distribution, such as due to a fatigue crack at the rivet joint, can be detected as an increase in the output voltage above that due to the flow about the rivet head.

Flux-focusing eddy current probe and rotating probe method for flaw detection

NASA Technical Reports Server (NTRS)

Wincheski, Buzz A. (Inventor); Fulton, James P. (Inventor); Nath, Shridhar C. (Inventor); Simpson, John W. (Inventor); Namkung, Min (Inventor)

1994-01-01

A flux-focusing electromagnetic sensor which uses a ferromagnetic flux-focusing lens simplifies inspections and increases detectability of fatigue cracks about circular fasteners and other circular inhomogeneities in high conductivity material. The unique feature of the device is the ferrous shield isolating a high-turn pick-up coil from an excitation coil. The use of the magnetic shield is shown to produce a null voltage output across the receiving coil in the presence of an unflawed sample. A redistribution of the current flow in the sample caused by the presence of flaws, however, eliminates the shielding condition and a large output voltage is produced, yielding a clear unambiguous flaw signal. By rotating the probe in a path around a circular fastener such as a rivet while maintaining a constant distance between the probe and the center of a rivet, the signal due to current flow about the rivet can be held constant. Any further changes in the current distribution, such as due to a fatigue crack at the rivet joint, can be detected as an increase in the output voltage above that due to the flow about the rivet head.

Nanostructured carbon materials based electrothermal air pump actuators

NASA Astrophysics Data System (ADS)

Liu, Qing; Liu, Luqi; Kuang, Jun; Dai, Zhaohe; Han, Jinhua; Zhang, Zhong

2014-05-01

Actuator materials can directly convert different types of energy into mechanical energy. In this work, we designed and fabricated electrothermal air pump-type actuators by utilization of various nanostructured carbon materials, including single wall carbon nanotubes (SWCNTs), reduced graphene oxide (r-GO), and graphene oxide (GO)/SWCNT hybrid films as heating elements to transfer electrical stimulus into thermal energy, and finally convert it into mechanical energy. Both the actuation displacement and working temperature of the actuator films show the monotonically increasing trend with increasing driving voltage within the actuation process. Compared with common polymer nanocomposites based electrothermal actuators, our actuators exhibited better actuation performances with a low driving voltage (<10 V), large generated stress (tens of MPa), high gravimetric density (tens of J kg-1), and short response time (few hundreds of milliseconds). Besides that, the pump actuators exhibited excellent stability under cyclic actuation tests. Among these actuators, a relatively larger actuation strain was obtained for the r-GO film actuator due to the intrinsic gas-impermeability nature of graphene platelets. In addition, the high modulus of the r-GO and GO/SWCNT films also guaranteed the large generated stress and high work density. Specifically, the generated stress and gravimetric work density of the GO/SWCNT hybrid film actuator could reach up to more than 50 MPa and 30 J kg-1, respectively, under a driving voltage of 10 V. The resulting stress value is at least two orders of magnitude higher than that of natural muscles (~0.4 MPa).Actuator materials can directly convert different types of energy into mechanical energy. In this work, we designed and fabricated electrothermal air pump-type actuators by utilization of various nanostructured carbon materials, including single wall carbon nanotubes (SWCNTs), reduced graphene oxide (r-GO), and graphene oxide (GO)/SWCNT hybrid films as heating elements to transfer electrical stimulus into thermal energy, and finally convert it into mechanical energy. Both the actuation displacement and working temperature of the actuator films show the monotonically increasing trend with increasing driving voltage within the actuation process. Compared with common polymer nanocomposites based electrothermal actuators, our actuators exhibited better actuation performances with a low driving voltage (<10 V), large generated stress (tens of MPa), high gravimetric density (tens of J kg-1), and short response time (few hundreds of milliseconds). Besides that, the pump actuators exhibited excellent stability under cyclic actuation tests. Among these actuators, a relatively larger actuation strain was obtained for the r-GO film actuator due to the intrinsic gas-impermeability nature of graphene platelets. In addition, the high modulus of the r-GO and GO/SWCNT films also guaranteed the large generated stress and high work density. Specifically, the generated stress and gravimetric work density of the GO/SWCNT hybrid film actuator could reach up to more than 50 MPa and 30 J kg-1, respectively, under a driving voltage of 10 V. The resulting stress value is at least two orders of magnitude higher than that of natural muscles (~0.4 MPa). Electronic supplementary information (ESI) available: A movie showing the weight-lifting actuation process of the GO/SWCNT actuator. See DOI: 10.1039/c4nr00536h

User handbook for block IV silicon solar cell modules

NASA Technical Reports Server (NTRS)

Smokler, M. I.

1982-01-01

The essential electrical and mechanical characteristics of block 4 photovoltaic solar cell modules are described. Such module characteristics as power output, nominal operating voltage, current-voltage characteristics, nominal operating cell temperature, and dimensions are tabulated. The limits of the environmental and other stress tests to which the modules are subjected are briefly described.

Accelerated life testing and reliability of high K multilayer ceramic capacitors

NASA Technical Reports Server (NTRS)

Minford, W. J.

1981-01-01

The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.

Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

NASA Astrophysics Data System (ADS)

Zhang, Shumao; Kuo, Yue

2018-03-01

Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

PubMed

Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

2016-09-14

We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.

A new mathematical model and control of a three-phase AC-DC voltage source converter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blasko, V.; Kaura, V.

1997-01-01

A new mathematical model of the power circuit of a three-phase voltage source converter (VSC) was developed in the stationary and synchronous reference frames. The mathematical model was then used to analyze and synthesize the voltage and current control loops for the VSC. Analytical expressions were derived for calculating the gains and time constants of the current and voltage regulators. The mathematical model was used to control a 140-kW regenerative VSC. The synchronous reference frame model was used to define feedforward signals in the current regulators to eliminate the cross coupling between the d and q phases. It allowed themore » reduction of the current control loop to first-order plants and improved their tracking capability. The bandwidths of the current and voltage-control loops were found to be approximately 20 and 60 times (respectively) smaller than the sampling frequency. All control algorithms were implemented in a digital-signal processor. All results of the analysis were experimentally verified.« less

Voltage dependence of a stochastic model of activation of an alpha helical S4 sensor in a K channel membrane

NASA Astrophysics Data System (ADS)

Vaccaro, S. R.

2011-09-01

The voltage dependence of the ionic and gating currents of a K channel is dependent on the activation barriers of a voltage sensor with a potential function which may be derived from the principal electrostatic forces on an S4 segment in an inhomogeneous dielectric medium. By variation of the parameters of a voltage-sensing domain model, consistent with x-ray structures and biophysical data, the lowest frequency of the survival probability of each stationary state derived from a solution of the Smoluchowski equation provides a good fit to the voltage dependence of the slowest time constant of the ionic current in a depolarized membrane, and the gating current exhibits a rising phase that precedes an exponential relaxation. For each depolarizing potential, the calculated time dependence of the survival probabilities of the closed states of an alpha helical S4 sensor are in accord with an empirical model of the ionic and gating currents recorded during the activation process.

Elastic constants of hcp 4He: Path-integral Monte Carlo results versus experiment

NASA Astrophysics Data System (ADS)

Ardila, Luis Aldemar Peña; Vitiello, Silvio A.; de Koning, Maurice

2011-09-01

The elastic constants of hcp 4He are computed using the path-integral Monte Carlo (PIMC) method. The stiffness coefficients are obtained by imposing different distortions to a periodic cell containing 180 atoms, followed by measurement of the elements of the corresponding stress tensor. For this purpose an appropriate path-integral expression for the stress tensor observable is derived and implemented into the pimc++ package. In addition to allowing the determination of the elastic stiffness constants, this development also opens the way to an explicit atomistic determination of the Peierls stress for dislocation motion using the PIMC technique. A comparison of the results to available experimental data shows an overall good agreement of the density dependence of the elastic constants, with the single exception of C13. Additional calculations for the bcc phase, on the other hand, show good agreement for all elastic constants.

1998 Conference on Precision Electromagnetic Measurements Digest. Proceedings.

NASA Astrophysics Data System (ADS)

Nelson, T. L.

The following topics were dealt with: fundamental constants; caesium standards; AC-DC transfer; impedance measurement; length measurement; units; statistics; cryogenic resonators; time transfer; QED; resistance scaling and bridges; mass measurement; atomic fountains and clocks; single electron transport; Newtonian constant of gravitation; stabilised lasers and frequency measurements; cryogenic current comparators; optical frequency standards; high voltage devices and systems; international compatibility; magnetic measurement; precision power measurement; high resolution spectroscopy; DC transport standards; waveform acquisition and analysis; ion trap standards; optical metrology; quantised Hall effect; Josephson array comparisons; signal generation and measurement; Avogadro constant; microwave networks; wideband power standards; antennas, fields and EMC; quantum-based standards.

Breakdown Characteristics of SF6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages

NASA Astrophysics Data System (ADS)

Kawamura, Tatsuo; Lee, Bok-Hee; Nishimura, Takahiko; Ishii, Masaru

1994-04-01

This paper deals with the experimental investigations of particle-initiated breakdown of SF6 gas stressed by the oscillating transient overvoltage and non-oscillating impulse voltages. The experiments are carried out by using hemisphere-to-plane electrodes with a needle-shaped protrusion in the gas pressure range of 0.05 to 0.3 MPa. The temporal growth of the prebreakdown process is measured by a current shunt and a photomultiplier. The electrical breakdown is initiated by the streamer corona in the vicinity of a needle-shaped protrusion and the flashover of test gap is substantially influenced by the local field enhancement due to the space charge formed by the preceding streamer corona. The dependence of the voltage-time characteristics on the polarity of test voltage is appreciable, and the minimum breakdown voltage under the damped oscillating transient overvoltage is approximately the same as that under the standard lightning impulse voltage. In presence of positive polarity, the dielectric strength of SF6 gas stressed by the oscillating transient overvoltage is particularly sensitive to the local field perturbed by a sharp conducting particle. The formative time lag from the first streamer corona to breakdown is longer in negative polarity than in positive polarity and the field stabilization of space charge is more pronounced in negative polarity.

On the role of constant-stress surfaces in the problem of minimizing elastic stress concentration

NASA Technical Reports Server (NTRS)

Wheeler, L.

1976-01-01

Cases involving antiplane shear deformation, axisymmetric torsion, and plane strain theory, with surfaces of constant stress magnitude optimal in terms of minimizing stress, are investigated. Results for the plane theory refer to exterior doubly connected domains. Stresses generated by torsion of an elastic solid lying within a radially convex region of revolution with plane ends, body force absent, and lateral surface traction-free, are examined. The unknown portion of the boundary of such domains may involve a hole, fillet, or notch.

Superconducting bolometers for millimeter and sub-millimeter wavelengths

NASA Astrophysics Data System (ADS)

Jethava, N.; Kreysa, E.; Siringo, G.; Esch, W.; Gemünd, H.-P.; Menten, K. M.; May, T.; Anders, S.; Fritzsch, L.; Boucher, R.; Zakosarenko, V.; Meyer, H.-G.

2008-07-01

We present the experimental results and a bolometer model of the voltage-biased superconducting bolometer on the low stress silicon nitride (Si3N4) membrane, developed in collaboration between the Max-Planck-Institut fur Radioastronomie (MPIfR), Bonn and the Institute for Photonic Technology (IPHT), Jena, Germany. The superconducting thermistor, deposited on the low stress silicon nitride membrane, is a bilayer of gold-palladium and molybdenum and is designed for a transition temperature of 450 mK. Bolometers for the 1.2 mm atmospheric window were designed, built and tested. The thermal conductance of the bolometer is tuned by structuring the silicon nitride membrane into spider-like geometries. The incident radiation is absorbed by crossed dipoles made from gold-palladium alloy with a surface resistance of 10 Ω/. Using the COSMOS finite element analysis package, the thermal conductance is obtained for the bolometers of different geometries. FEA simulations showed that the deposition of a gold ring around the absorbing area could increase the sensitivity of the bolometer. Therefore, a gold ring is deposited around the center absorbing patch of the silicon nitride membrane. For the bolometer with a gold ring, the measured NEP is 1.7 × 10-16W/√ Hz and the time constant is in the range between 1.4 and 2 ms.

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Atanassova, E.; Stojadinović, N.; Spassov, D.; Manić, I.; Paskaleva, A.

2013-05-01

The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta2O5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta2O5; Al doping reduces defects in Ta2O5, the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta2O5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

Determination of calibration constants for the hole-drilling residual stress measurement technique applied to orthotropic composites. I - Theoretical considerations

NASA Technical Reports Server (NTRS)

Prasad, C. B.; Prabhakaran, R.; Tompkins, S.

1987-01-01

The hole-drilling technique for the measurement of residual stresses using electrical resistance strain gages has been widely used for isotropic materials and has been adopted by the ASTM as a standard method. For thin isotropic plates, with a hole drilled through the thickness, the idealized hole-drilling calibration constants are obtained by making use of the well-known Kirsch's solution. In this paper, an analogous attempt is made to theoretically determine the three idealized hole-drilling calibration constants for thin orthotropic materials by employing Savin's (1961) complex stress function approach.

Ramp-integration technique for capacitance-type blade-tip clearance measurement

NASA Astrophysics Data System (ADS)

Sarma, Garimella R.; Barranger, John P.

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solution shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects for environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and a typical application are included.

Ramp-integration technique for capacitance-type blade-tip clearance measurement

NASA Astrophysics Data System (ADS)

Sarma, G. R.; Barranger, J. P.

1986-05-01

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solutions shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects the environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and typical application are included.

Ramp-integration technique for capacitance-type blade-tip clearance measurement

NASA Technical Reports Server (NTRS)

Sarma, Garimella R.; Barranger, John P.

1986-01-01

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solution shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects for environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and a typical application are included.

Ramp-integration technique for capacitance-type blade-tip clearance measurement

NASA Technical Reports Server (NTRS)

Sarma, G. R.; Barranger, J. P.

1986-01-01

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solutions shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects the environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and typical application are included.

Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

PubMed Central

2017-01-01

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport. PMID:28084725

Temperature dependent relaxation of interface-states in graphene on SiO2

NASA Astrophysics Data System (ADS)

Singh, Anil Kumar; Gupta, Anjan Kumar

2018-04-01

We have studied the evolution of resistance relaxation with temperature in graphene field effect transistor on SiO2. At room temperature, piranha-cleaned-SiO2 devices show slow resistance relaxation while IPA-cleaned-SiO2 devices do not. With cooling the former devices show a decrease in magnitude and time constant of the slow relaxation and it becomes negligible at 250K. Relaxation study at elevated temperature of the IPA-cleaned devices show a gate voltage polarity dependent time constant with respect to the charge neutrality point but it remains almost independent of temperature. The magnitude of relaxation increases with temperature. Further, after annealing at elevated temperature, we found that the relaxation times become independent of gate voltage polarity and its magnitude becomes very small. These observations are discussed using increase in diffusion of interface-species with temperature.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-01

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-17

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Transistorized PWM inverter-induction motor drive system

NASA Technical Reports Server (NTRS)

Peak, S. C.; Plunkett, A. B.

1982-01-01

This paper describes the development of a transistorized PWM inverter-induction motor traction drive system. A vehicle performance analysis was performed to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of inverter and motor specifications. The inverter was a transistorized three-phase bridge using General Electric power Darlington transistors. The description of the design and development of this inverter is the principal object of this paper. The high-speed induction motor is a design which is optimized for use with an inverter power source. The primary feedback control is a torque angle control with voltage and torque outer loop controls. A current-controlled PWM technique is used to control the motor voltage. The drive has a constant torque output with PWM operation to base motor speed and a constant horsepower output with square wave operation to maximum speed. The drive system was dynamometer tested and the results are presented.

Direct block by bisindolylmaleimide of rat Kv1.5 expressed in Chinese hamster ovary cells.

PubMed

Choi, B H; Choi, J S; Jeong, S W; Hahn, S J; Yoon, S H; Jo, Y H; Kim, M S

2000-05-01

The interaction of bisindolylmaleimide (BIM), widely used as a specific protein kinase C (PKC) inhibitor, with rat brain Kv1.5 (rKv1.5) channels stably expressed in Chinese hamster ovary cells was investigated using the whole-cell patch-clamp technique. BIM (I) and its inactive analog, BIM (V), inhibited rKv1.5 currents at +50 mV in a reversible concentration-dependent manner with an apparent K(d) value of 0.38 and 1.70 microM, respectively. BIM (I) accelerated the decay rate of inactivation of rKv1.5 currents but did not significantly modify the kinetics of current activation. Other specific PKC inhibitors, chelerythrine and PKC 19-36, had no effect on rKv1.5 and did not prevent the inhibitory effect of BIM (I). The inhibition of rKv1.5 by BIM (I) and BIM (V) was highly voltage-dependent between -30 and 0 mV (voltage range of channel opening), suggesting that both drugs interact preferentially with the open state of the channel. The additional inhibition by BIM (I) displayed a voltage dependence (delta = 0.19) in the full activation voltage range positive to 0 mV, but was not shown in BIM (V) (delta = 0). The rate constants of association and dissociation for BIM (I) were 9.63 microM(-1) s(-1) and 5.82 s(-1), respectively. BIM (I) increased the time constant of deactivation of tail currents from 26. 35 to 45.79 ms, resulting in tail crossover phenomenon. BIM (I) had no effect on the voltage dependence of steady-state inactivation. BIM (I) produced use-dependent inhibition of rKv1.5, which was consistent with the slow recovery from inactivation in the presence of drug. These results suggest that BIM (I) directly inhibits rKv1.5 channels in a phosphorylation-independent, and state-, voltage-, time-, and use-dependent manner.

Voltage-dependent dynamic FRET signals from the transverse tubules in mammalian skeletal muscle fibers.

PubMed

DiFranco, Marino; Capote, Joana; Quiñonez, Marbella; Vergara, Julio L

2007-12-01

Two hybrid voltage-sensing systems based on fluorescence resonance energy transfer (FRET) were used to record membrane potential changes in the transverse tubular system (TTS) and surface membranes of adult mice skeletal muscle fibers. Farnesylated EGFP or ECFP (EGFP-F and ECFP-F) were used as immobile FRET donors, and either non-fluorescent (dipicrylamine [DPA]) or fluorescent (oxonol dye DiBAC(4)(5)) lipophilic anions were used as mobile energy acceptors. Flexor digitorum brevis (FDB) muscles were transfected by in vivo electroporation with pEGFP-F and pECFP-F. Farnesylated fluorescent proteins were efficiently expressed in the TTS and surface membranes. Voltage-dependent optical signals resulting from resonance energy transfer from fluorescent proteins to DPA were named QRET transients, to distinguish them from FRET transients recorded using DiBAC(4)(5). The peak DeltaF/F of QRET transients elicited by action potential stimulation is twice larger in fibers expressing ECFP-F as those with EGFP-F (7.1% vs. 3.6%). These data provide a unique experimental demonstration of the importance of the spectral overlap in FRET. The voltage sensitivity of QRET and FRET signals was demonstrated to correspond to the voltage-dependent translocation of the charged acceptors, which manifest as nonlinear components in current records. For DPA, both electrical and QRET data were predicted by radial cable model simulations in which the maximal time constant of charge translocation was 0.6 ms. FRET signals recorded in response to action potentials in fibers stained with DiBAC(4)(5) exhibit DeltaF/F amplitudes as large as 28%, but their rising phase was slower than those of QRET signals. Model simulations require a time constant for charge translocation of 1.6 ms in order to predict current and FRET data. Our results provide the basis for the potential use of lipophilic ions as tools to test for fast voltage-dependent conformational changes of membrane proteins in the TTS.

Modeling the instability behavior of thin film devices: Fermi Level Pinning

NASA Astrophysics Data System (ADS)

Moeini, Iman; Ahmadpour, Mohammad; Gorji, Nima E.

2018-05-01

We investigate the underlying physics of degradation/recovery of a metal/n-CdTe Schottcky junction under reverse or forward bias stressing conditions. We used Sah-Noyce-Shockley (SNS) theory to investigate if the swept of Fermi level pinning at different levels (under forward/reverse bias) is the origin of change in current-voltage characteristics of the device. This theory is based on Shockley-Read-Hall recombination within the depletion width and takes into account the interface defect levels. Fermi Level Pinning theory was primarily introduced by Ponpon and developed to thin film solar cells by Dharmadasa's group in Sheffield University-UK. The theory suggests that Fermi level pinning at multiple levels occurs due to high concentration of electron-traps or acceptor-like defects at the interface of a Schottky or pn junction and this re-arranges the recombination rate and charage collection. Shift of these levels under stress conditions determines the change in current-voltage characteristics of the cell. This theory was suggested for several device such as metal/n-CdTe, CdS/CdTe, CIGS/CdS or even GaAs solar cells without a modeling approach to clearly explain it's physics. We have applied the strong SNS modeling approach to shed light on Fermi Level Pinning theory. The modeling confirms that change in position of Fermi Level and it's pining in a lower level close to Valence band increases the recombination and reduces the open-circuit voltage. In contrast, Fermi Level pinning close to conduction band strengthens the electric field at the junction which amplifies the carrier collection and boosts the open-circuit voltage. This theory can well explain the stress effect on device characteristics of various solar cells or Schottky junctions by simply finding the right Fermi level pinning position at every specific stress condition.

Printed Graphene Derivative Circuits as Passive Electrical Filters

PubMed Central

Sinar, Dogan

2018-01-01

The objective of this study is to inkjet print resistor-capacitor (RC) low pass electrical filters, using a novel water-based cellulose graphene ink, and compare the voltage-frequency and transient behavior to equivalent circuits constructed from discrete passive components. The synthesized non-toxic graphene-carboxymethyl cellulose (G-CMC) ink is deposited on mechanically flexible polyimide substrates using a customized printer that dispenses functionalized aqueous solutions. The design of the printed first-order and second-order low-pass RC filters incorporate resistive traces and interdigitated capacitors. Low pass filter characteristics, such as time constant, cut-off frequency and roll-off rate, are determined for comparative analysis. Experiments demonstrate that for low frequency applications (<100 kHz) the printed graphene derivative circuits performed as well as the circuits constructed from discrete resistors and capacitors for both low pass filter and RC integrator applications. The impact of mechanical stress due to bending on the electrical performance of the flexible printed circuits is also investigated. PMID:29473890

Printed Graphene Derivative Circuits as Passive Electrical Filters.

PubMed

Sinar, Dogan; Knopf, George K

2018-02-23

The objective of this study is to inkjet print resistor-capacitor ( RC ) low pass electrical filters, using a novel water-based cellulose graphene ink, and compare the voltage-frequency and transient behavior to equivalent circuits constructed from discrete passive components. The synthesized non-toxic graphene-carboxymethyl cellulose (G-CMC) ink is deposited on mechanically flexible polyimide substrates using a customized printer that dispenses functionalized aqueous solutions. The design of the printed first-order and second-order low-pass RC filters incorporate resistive traces and interdigitated capacitors. Low pass filter characteristics, such as time constant, cut-off frequency and roll-off rate, are determined for comparative analysis. Experiments demonstrate that for low frequency applications (<100 kHz) the printed graphene derivative circuits performed as well as the circuits constructed from discrete resistors and capacitors for both low pass filter and RC integrator applications. The impact of mechanical stress due to bending on the electrical performance of the flexible printed circuits is also investigated.

Numerical determination of Paris law constants for carbon steel using a two-scale model

NASA Astrophysics Data System (ADS)

Mlikota, M.; Staib, S.; Schmauder, S.; Božić, Ž.

2017-05-01

For most engineering alloys, the long fatigue crack growth under a certain stress level can be described by the Paris law. The law provides a correlation between the fatigue crack growth rate (FCGR or da/dN), the range of stress intensity factor (ΔK), and the material constants C and m. A well-established test procedure is typically used to determine the Paris law constants C and m, considering standard specimens, notched and pre-cracked. Definition of all the details necessary to obtain feasible and comparable Paris law constants are covered by standards. However, these cost-expensive tests can be replaced by appropriate numerical calculations. In this respect, this paper deals with the numerical determination of Paris law constants for carbon steel using a two-scale model. A micro-model containing the microstructure of a material is generated using the Finite Element Method (FEM) to calculate the fatigue crack growth rate at a crack tip. The model is based on the Tanaka-Mura equation. On the other side, a macro-model serves for the calculation of the stress intensity factor. The analysis yields a relationship between the crack growth rates and the stress intensity factors for defined crack lengths which is then used to determine the Paris law constants.

An experimental investigation of electric flashover across solid insulators in vacuum

NASA Technical Reports Server (NTRS)

Vonbaeyer, H. C.

1984-01-01

The insulation of high voltage conductors often employs solid insulators for many applications. In such applications, an unexpected electric flashover may occur along the insulator surface. Under conditions of high vacuum, the flashover voltage across the insulator is observed to be lower compared with that of the same electrode separation without an insulator. The reason for such an extreme reduction of flashover voltage is not well understood. Several models based on the secondary electron emission, were proposed to explain the onset of the surface flashover. The starting point and the developing velocity of the surface flashover were determined. An intensified image converter camera was used to observe the initial stage of electrical flashover along the insulator surface parallel to the electric field. Several different insulator materials were used as test pieces to determine the effect of the dielectric constant on the flashover voltage characteristics.

Characterization of chaotic electroconvection near flat electrodes under oscillatory voltages

NASA Astrophysics Data System (ADS)

Kim, Jeonglae; Davidson, Scott; Mani, Ali

2017-11-01

Onset of hydrodynamic instability and chaotic electroconvection in aqueous systems are studied by directly solving the two-dimensional coupled Poisson-Nernst-Planck and Navier-Stokes equations. An aqueous binary electrolyte is bounded by two planar electrodes where time-harmonic voltage is applied at a constant oscillation frequency. The governing equations are solved using a fully-conservative second-order-accurate finite volume discretization and a second-order implicit Euler time advancement. At a sufficiently high amplitude of applied voltage, the system exhibits chaotic behaviors involving strong hydrodynamic mixing and enhanced electroconvection. The system responses are characterized as a function of oscillation frequency, voltage magnitude, and the ratio of diffusivities of two ion species. Our results indicate that electroconvection is most enhanced for frequencies on the order of inverse system RC time scale. We will discuss the dependence of this optimal frequency on the asymmetry of the diffusion coefficients of ionic species. Supported by the Stanford's Precourt Institute.

Non-intrusive high voltage measurement using slab coupled optical sensors

NASA Astrophysics Data System (ADS)

Stan, Nikola; Chadderdon, Spencer; Selfridge, Richard H.; Schultz, Stephen M.

2014-03-01

We present an optical fiber non-intrusive sensor for measuring high voltage transients. The sensor converts the unknown voltage to electric field, which is then measured using slab-coupled optical fiber sensor (SCOS). Since everything in the sensor except the electrodes is made of dielectric materials and due to the small field sensor size, the sensor is minimally perturbing to the measured voltage. We present the details of the sensor design, which eliminates arcing and minimizes local dielectric breakdown using Teflon blocks and insulation of the whole structure with transformer oil. The structure has a capacitance of less than 3pF and resistance greater than 10 GΩ. We show the measurement of 66.5 kV pulse with a 32.6μs time constant. The measurement matches the expected value of 67.8 kV with less than 2% error.

Design and analysis of a low actuation voltage electrowetting-on-dielectric microvalve for drug delivery applications.

PubMed

Samad, Mst Fateha; Kouzani, Abbas Z

2014-01-01

This paper presents a low actuation voltage microvalve with optimized insulating layers that manipulates a conducting ferro-fluid droplet by the principle of electrowetting-on-dielectric (EWOD). The proposed EWOD microvalve contains an array of chromium (Cr) electrodes on the soda-lime glass substrate, covered by both dielectric and hydrophobic layers. Various dielectric layers including Su-8 2002, Polyvinylidenefluoride (PVDF) and Cyanoethyl pullulan (CEP), and thin (50 nm) hydrophobic Teflon and Cytonix are used to analyze the EWOD microvalves at different voltages. The Finite Element Method (FEM) based software, Coventorware is used to carry out the simulation analysis. It is observed that the EWOD microvalve having a CEP dielectric layer with dielectric constant of about 20 and thickness of 1 μm, and a Cytonix hydrophobic layer with thickness of 50 nm operated the conducting ferro-fluid droplet at the actuation voltage as low as 7.8 V.

Photovoltaic array: Power conditioner interface characteristics

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.; Hill, G. M.; Ross, R. G., Jr.

1982-01-01

The electrical output (power, current, and voltage) of flat plate solar arrays changes constantly, due primarily to changes in cell temperature and irradiance level. As a result, array loads such as dc-to-ac power conditioners must be capable of accommodating widely varying input levels while maintaining operation at or near the maximum power point of the array. The array operating characteristics and extreme output limits necessary for the systematic design of array load interfaces under a wide variety of climatic conditions are studied. A number of interface parameters are examined, including optimum operating voltage, voltage energy, maximum power and current limits, and maximum open circuit voltage. The effect of array degradation and I-V curve fill factor or the array power conditioner interface is also discussed. Results are presented as normalized ratios of power conditioner parameters to array parameters, making the results universally applicable to a wide variety of system sizes, sites, and operating modes.

Production of atmospheric-pressure glow discharge in nitrogen using needle-array electrode

NASA Astrophysics Data System (ADS)

Takaki, K.; Hosokawa, M.; Sasaki, T.; Mukaigawa, S.; Fujiwara, T.

2005-04-01

An atmospheric pressure glow discharge was generated using a needle-array electrode in nitrogen, and the voltage-current characteristics of the glow discharge were obtained in a range from 1 mA to 60 A. A pulsed high voltage with short rise time under 10 ns was employed to generate streamer discharges simultaneously at all needle tips. The large number of streamer discharges prevented the glow-to-arc transition caused by inhomogeneous thermalization. Semiconductor opening switch diodes were employed as an opening switch to shorten the rise time. The glow voltage was almost constant until the discharge current became 0.3 A, whereas the voltage increased with the current higher than 0.3 A. Electron density and temperature in a positive column of the glow discharge at 60 A were obtained to 1.4×1012cm-3 and 1.3 eV from calculation based on nitrogen swarm data.

Optimizing MOS-gated thyristor using voltage-based equivalent circuit model for designing steep-subthreshold-slope PN-body-tied silicon-on-insulator FET

NASA Astrophysics Data System (ADS)

Ueda, Daiki; Takeuchi, Kiyoshi; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-04-01

A new circuit model that provides a clear guide on designing a MOS-gated thyristor (MGT) is reported. MGT plays a significant role in achieving a steep subthreshold slope of a PN-body tied silicon-on-insulator (SOI) FET (PNBTFET), which is an SOI MOSFET merged with an MGT. The effects of design parameters on MGT and the proposed equivalent circuit model are examined to determine how to regulate the voltage response of MGT and how to suppress power dissipation. It is demonstrated that MGT with low threshold voltages, small hysteresis widths, and small power dissipation can be designed by tuning design parameters. The temperature dependence of MGT is also examined, and it is confirmed that hysteresis width decreases with the average threshold voltage kept nearly constant as temperature rises. The equivalent circuit model can be conveniently used to design low-power PNBTFET.

Variable Frequency Operations of an Offshore Wind Power Plant with HVDC-VSC: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gevorgian, V.; Singh, M.; Muljadi, E.

2011-12-01

In this paper, a constant Volt/Hz operation applied to the Type 1 wind turbine generator. Various control aspects of Type 1 generators at the plant level and at the turbine level will be investigated. Based on DOE study, wind power generation may reach 330 GW by 2030 at the level of penetration of 20% of the total energy production. From this amount of wind power, 54 GW of wind power will be generated at offshore wind power plants. The deployment of offshore wind power plants requires power transmission from the plant to the load center inland. Since this power transmissionmore » requires submarine cable, there is a need to use High-Voltage Direct Current (HVDC) transmission. Otherwise, if the power is transmitted via alternating current, the reactive power generated by the cable capacitance may cause an excessive over voltage in the middle of the transmission distance which requires unnecessary oversized cable voltage breakdown capability. The use of HVDC is usually required for transmission distance longer than 50 kilometers of submarine cables to be economical. The use of HVDC brings another advantage; it is capable of operating at variable frequency. The inland substation will be operated to 60 Hz synched with the grid, the offshore substation can be operated at variable frequency, thus allowing the wind power plant to be operated at constant Volt/Hz. In this paper, a constant Volt/Hz operation applied to the Type 1 wind turbine generator. Various control aspects of Type 1 generators at the plant level and at the turbine level will be investigated.« less

A ROIC for Mn(TPP)Cl-DOP-THF-Polyhema PVC membrane modified n-channel Si3N4 ISFET sensitive to histamine.

PubMed

Samah, N L M A; Lee, Khuan Y; Sulaiman, S A; Jarmin, R

2017-07-01

Intolerance of histamine could lead to scombroid poisoning with fatal consequences. Current detection methods for histamine are wet laboratory techniques which employ expensive equipment that depends on skills of seasoned technicians and produces delayed test analysis result. Previous works from our group has established that ISFETs can be adapted for detecting histamine with the use of a novel membrane. However, work to integrate ISFETs with a readout interfacing circuit (ROIC) circuit to display the histamine concentration has not been reported so far. This paper concerns the development of a ROIC specifically to integrate with a Mn(TPP)Cl-DOP-THF-Polyhema PVC membrane modified n-channel Si3N4 ISFET to display the histamine concentration. It embodies the design of constant voltage constant current (CVCC) circuit, amplification circuit and micro-controller based display circuit. A DC millivolt source is used to substitute the membrane modified ISFET as preliminary work. Input is histamine concentration corresponding to the safety level designated by the Food and Drugs Administration (FDA). Results show the CVCC circuit makes the output follows the input and keeps VDS constant. The amplification circuit amplifies the output from the CVCC circuit to the range 2.406-4.888V to integrate with the microcontroller, which is programmed to classify and display the histamine safety level and its corresponding voltage on a LCD panel. The ROIC could be used to produce direct output voltages corresponding to histamine concentrations, for in-situ applications.

Tips to Manage Anxiety and Stress

MedlinePlus

... 2018 Conference Snapshot Tips to Manage Anxiety and Stress When you're feeling anxious or stressed, the ... every email. Emails are serviced by Constant Contact. Stress Relief Kits Feeling stressed? Get an ADAA stress ...

The Cathode Oscillograph for the Study of Low, Medium, and High Frequencies

NASA Technical Reports Server (NTRS)

Dufour, A

1924-01-01

The object of this work has been to construct an apparatus for obtaining oscillogram of voltages and currents which are variable with respect to time and of the frequency which is constantly met in radio.

The Measurement of e/k in the Introductory Physics Laboratory

ERIC Educational Resources Information Center

Inman, Fred W.; Miller, Carl E.

1973-01-01

The ratio of electronic charge to Boltzmann's constant can be easily determined by measuring the short-circuit collector current versus the emitter-base voltage characteristic of a silicon transistor connected in the common-base mode. (Author/DF)

Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

PubMed

Martínez Hardigree, Josué F; Katz, Howard E

2014-04-15

Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Experimental Magnetohydrodynamic Energy Extraction from a Pulsed Detonation

DTIC Science & Technology

2015-03-01

experimental data taken in this thesis will follow voltage profiles similar to Fig. 2. Notice the initial section in Fig. 2 shows exponential decay consistent...equal that time constant. The exponential curves in Fig. 2 show how changing the time constant can change the charge and/or discharge rate of the...see Fig. 1), at a sampling rate of 1 MHz. Shielded wire and a common ground were used throughout the DAQ system to avoid capacitive issues in the

Slow Crack Growth Analysis of Brittle Materials with Finite Thickness Subjected to Constant Stress-Rate Flexural Loading

NASA Technical Reports Server (NTRS)

Chio, S. R.; Gyekenyesi, J. P.

1999-01-01

A two-dimensional, numerical analysis of slow crack growth (SCG) was performed for brittle materials with finite thickness subjected to constant stress-rate ("dynamic fatigue") loading in flexure. The numerical solution showed that the conventional, simple, one-dimensional analytical solution can be used with a maximum error of about 5% in determining the SCG parameters of a brittle material with the conditions of a normalized thickness (a ratio of specimen thickness to initial crack size) T > 3.3 and of a SCG parameter n > 10. The change in crack shape from semicircular to elliptical configurations was significant particularly at both low stress rate and low T, attributed to predominant difference in stress intensity factor along the crack front. The numerical solution of SCG parameters was supported within the experimental range by the data obtained from constant stress-rate flexural testing for soda-lime glass microslides at ambient temperature.

Research on silicon microchannel array oxidation insulation technology and stress issues

NASA Astrophysics Data System (ADS)

Chai, Jin; Li, Mo; Liang, Yong-zhao; Yang, Ji-kai; Wang, Guo-zheng; Duanmu, Qing-duo

2013-08-01

Microchannel plate is widely used in the field of low light level night vision, photomultiplier, tubes, X-ray enhancer and so on. In order to meet the requirement of microchannel plate electron multiplier, we used the method of thermal oxidation to produce a thin film of silicon dioxide which could play a role in electric insulation. Silicon dioxide film has a high breakdown voltage, it can satisfy the high breakdown voltage requirements of electron multiplier. We should find the reasonable parameter values and preparation process in the oxidation so that the thickness and uniformity of the silicon dioxide layer would meet requirement. This article has been focused on researching and analyzing of the problem of oxide insulation and thermal stress in the process of production of silicon dioxide film. In this experiment, dry oxygen and wet oxygen were carried out respectively for 8 hours. The thickness of dry oxygen silicon dioxide films was 458 nm and wet oxygen silicon dioxide films was 1.4 μm. Under these conditions, the silicon microchannel is uniformity and neat, meanwhile the insulating layer's breakdown voltage was measured at 450 V after the wet oxygen oxidation. By using ANSYS finite element software, we analyze the thermal stress, which came from the microchannel oxygen processes, under the conditions of which ambient temperature was 27 ℃ and porosity was 64%, we simulated the thermal stress in the temperature of 1200 ℃ and 1000 ℃, finally we got the maximum equivalent thermal stress of 472 MPa and 403 MPa respectively. The higher thermal stress area was spread over Si-SiO2 interface, by simulate conditions 50% porosity silicon microchannel sample was selected for simulation analysis at 1100 ℃, we got the maximum equivalent thermal stress of 472 MPa, Thermal stress is the minimum value of 410 MPa.

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

NASA Astrophysics Data System (ADS)

Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T.

2014-09-01

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

Micro grid control strategy of DFIG unit based on improved DC grid connected topology

NASA Astrophysics Data System (ADS)

Zongze, Xia; Fei, Xia; Zhixiong, Yang

2017-05-01

Aiming to the application of the DFIG connected to DC-Microgrids, an improved topology for the DFIG connected to DC-Microgrids is taken into account in this thesis. The stator side loses the support of voltage and frequency of AC point of common coupling bus. A novel control method suitable to the stator side converter (SSC) and the rotor side converter (RSC) of the topology is proposed. The independent control of stator voltage and frequency, the decoupled control of power and variable speed constant frequency of DFIG are achieved in the doubly-fed induction generator connected to DC-Microgrids. which can enhance the capacity of active power transmission of DFIG during the voltage variation.

Electric field and space charge distribution measurement in transformer oil struck by impulsive high voltage

NASA Astrophysics Data System (ADS)

Sima, Wenxia; Guo, Hongda; Yang, Qing; Song, He; Yang, Ming; Yu, Fei

2015-08-01

Transformer oil is widely used in power systems because of its excellent insulation properties. The accurate measurement of electric field and space charge distribution in transformer oil under high voltage impulse has important theoretical and practical significance, but still remains challenging to date because of its low Kerr constant. In this study, the continuous electric field and space charge distribution over time between parallel-plate electrodes in high-voltage pulsed transformer oil based on the Kerr effect is directly measured using a linear array photoelectrical detector. Experimental results demonstrate the applicability and reliability of this method. This study provides a feasible approach to further study the space charge effects and breakdown mechanisms in transformer oil.

An innovative high-power constant-current pulsed-arc power-supply for a high-density pulsed-arc-plasma ion-source using a LaB6-filament.

PubMed

Ueno, A; Oguri, H; Ikegami, K; Namekawa, Y; Ohkoshi, K; Tokuchi, A

2010-02-01

An innovative high-power constant-current (CC) pulsed-arc (PA) power-supply (PS) indispensable for a high-density PA plasma ion-source using a lanthanum hexaboride (LaB(6)) filament was devised by combining a constant-voltage (CV) PA-PS, which is composed of an insulated gate bipolar transistor (IGBT) switch, a CV direct-current (dc) PS and a 270 mF capacitor with a CC-PA-PS, which is composed of an IGBT-switch, a CC-dc-PS and a 400 microH inductor, through the inductor. The hybrid-CC-PA-PS succeeded in producing a flat arc-pulse with a peak power of 56 kW (400 A x 140 V) and a duty factor of more than 1.5% (600 micros x 25 Hz) for Japan Proton Accelerator Research Complex (J-PARC) H(-) ion-source stably. It also succeeded in shortening the 99% rising-time of the arc-pulse-current to about 20 micros and tilting up or down the arc-pulse-current arbitrarily and almost linearly by changing the setting voltage of its CV-dc-PS.

The modelling of carbon-based supercapacitors: Distributions of time constants and Pascal Equivalent Circuits

NASA Astrophysics Data System (ADS)

Fletcher, Stephen; Kirkpatrick, Iain; Dring, Roderick; Puttock, Robert; Thring, Rob; Howroyd, Simon

2017-03-01

Supercapacitors are an emerging technology with applications in pulse power, motive power, and energy storage. However, their carbon electrodes show a variety of non-ideal behaviours that have so far eluded explanation. These include Voltage Decay after charging, Voltage Rebound after discharging, and Dispersed Kinetics at long times. In the present work, we establish that a vertical ladder network of RC components can reproduce all these puzzling phenomena. Both software and hardware realizations of the network are described. In general, porous carbon electrodes contain random distributions of resistance R and capacitance C, with a wider spread of log R values than log C values. To understand what this implies, a simplified model is developed in which log R is treated as a Gaussian random variable while log C is treated as a constant. From this model, a new family of equivalent circuits is developed in which the continuous distribution of log R values is replaced by a discrete set of log R values drawn from a geometric series. We call these Pascal Equivalent Circuits. Their behaviour is shown to resemble closely that of real supercapacitors. The results confirm that distributions of RC time constants dominate the behaviour of real supercapacitors.

Enhancement of the performance of GaN IMPATT diodes by negative differential mobility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Yang; Yang, Lin’an, E-mail: layang@xidian.edu.cn; Chen, Qing

2016-05-15

A theoretical analysis of high-efficiency punch-through operation GaN-based terahertz IMPATT diodes has been carried out in this paper. It is shown that the negative differential mobility (NDM) characteristics of GaN coupled with the space charge effect acting as a self-feedback system can markedly increase the drift velocity of injection carriers, and thereby enhance diode performance under appropriate external RF voltage. The behavior of traveling electrons in the transit zone is investigated in detail. It is found that the IMPATT diode with a punch-through structure operating in the NDM mode exhibits superior characteristics compared with the equivalent diode operating in themore » Si-like constant mobility mode. In particular, the NDM-mode diode can tolerate a larger RF voltage swing than that operating in constant mobility mode. Numerical simulation results reveal that the highest efficiency of 26.6% and maximum RF power of 2.29 W can be achieved for the NDM-mode diode at a frequency of 225 GHz. A highest efficiency of 19.0% and maximum RF power of 1.58 W are obtained for the diode with constant mobility.« less

Voltage collapse in complex power grids

PubMed Central

Simpson-Porco, John W.; Dörfler, Florian; Bullo, Francesco

2016-01-01

A large-scale power grid's ability to transfer energy from producers to consumers is constrained by both the network structure and the nonlinear physics of power flow. Violations of these constraints have been observed to result in voltage collapse blackouts, where nodal voltages slowly decline before precipitously falling. However, methods to test for voltage collapse are dominantly simulation-based, offering little theoretical insight into how grid structure influences stability margins. For a simplified power flow model, here we derive a closed-form condition under which a power network is safe from voltage collapse. The condition combines the complex structure of the network with the reactive power demands of loads to produce a node-by-node measure of grid stress, a prediction of the largest nodal voltage deviation, and an estimate of the distance to collapse. We extensively test our predictions on large-scale systems, highlighting how our condition can be leveraged to increase grid stability margins. PMID:26887284

Improved Control of Charging Voltage for Li-Ion Battery

NASA Technical Reports Server (NTRS)

Timmerman, Paul; Bugga, Ratnakumar

2006-01-01

The protocol for charging a lithium-ion battery would be modified, according to a proposal, to compensate for the internal voltage drop (charging current internal resistance of the battery). The essence of the modification is to provide for measurement of the internal voltage drop and to increase the terminal-voltage setting by the amount of the internal voltage drop. Ordinarily, a lithium-ion battery is charged at constant current until its terminal voltage attains a set value equal to the nominal full-charge potential. The set value is chosen carefully so as not to exceed the lithium-plating potential, because plated lithium in metallic form constitutes a hazard. When the battery is charged at low temperature, the internal voltage drop is considerable because the electrical conductivity of the battery electrolyte is low at low temperature. Charging the battery at high current at any temperature also gives rise to a high internal voltage drop. In some cases, the internal voltage drop can be as high as 1 volt per cell. Because the voltage available for charging is less than the terminal voltage by the amount of the internal voltage drop, the battery is not fully charged (see figure), even when the terminal voltage reaches the set value. In the modified protocol, the charging current would be periodically interrupted so that the zero-current battery-terminal voltage indicative of the state of charge could be measured. The terminal voltage would also be measured at full charging current. The difference between the full-current and zero-current voltages would equal the internal voltage drop. The set value of terminal voltage would then be increased beyond the nominal full-charge potential by the amount of the internal voltage drop. This adjustment would be performed repeatedly, in real time, so that the voltage setting would track variations in the internal voltage drop to afford full charge without risk of lithium plating. If the charging current and voltage settings were controlled by a computer, then this method of charge control could readily be implemented in software.

Gas Composition Sensing Using Carbon Nanotube Arrays

NASA Technical Reports Server (NTRS)

Li, Jing; Meyyappan, Meyya

2012-01-01

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.

Characterization of XLPE cable insulation by dynamic mechanical thermal analyzer (DMTA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parpal, J.L.; Guddemi, C.; Lamarre, L.

1996-12-31

Polymeric insulated cables and accessories are becoming widely used at voltages over 120 kV, even up to 500 kV. Although high electrical stress presents the greatest challenge, some attention should be given to the fact that the polymeric insulation is also subjected to mechanical stress which can affect the electrical performance of the high-voltage cable system. Thus, the mechanical response to an ac stress induced by oscillating electrostatic forces could be an important factor with regard to long-term degradation of polymeric insulation. This paper presents preliminary mechanical relaxation measurements on XLPE and LDPE specimens taken from unaged transmission type cables.more » Dynamic mechanical relaxation showing radial profiles of the mechanical loss tangent and tensile modulus E{prime} are presented in a temperature range of 40 to 120 C.« less

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

NASA Astrophysics Data System (ADS)

Lin, Chung-Han; Doutt, D. R.; Mishra, U. K.; Merz, T. A.; Brillson, L. J.

2010-11-01

Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.

Temperature effect on stress concentration around circular hole in a composite material specimen representative of X-29A forward-swept wing aircraft

NASA Technical Reports Server (NTRS)

Yeh, Hsien-Yang

1988-01-01

The theory of anisotropic elasticity was used to evaluate the anisotropic stress concentration factors of a composite laminated plate containing a small circular hole. This advanced composite was used to manufacture the X-29A forward-swept wing. It was found for composite material, that the anisotropic stress concentration is no longer a constant, and that the locations of maximum tangential stress points could shift by changing the fiber orientation with respect to the loading axis. The analysis showed that through the lamination process, the stress concentration factor could be reduced drastically, and therefore the structural performance could be improved. Both the mixture rule approach and the constant strain approach were used to calculate the stress concentration factor of room temperature. The results predicted by the mixture rule approach were about twenty percent deviate from the experimental data. However, the results predicted by the constant strain approach matched the testing data very well. This showed the importance of the inplane shear effect on the evaluation of the stress concentration factor for the X-29A composite plate.

On the expected relationships among apparent stress, static stress drop, effective shear fracture energy, and efficiency

USGS Publications Warehouse

Beeler, N.M.; Wong, T.-F.; Hickman, S.H.

2003-01-01

We consider expected relationships between apparent stress ??a and static stress drop ????s using a standard energy balance and find ??a = ????s (0.5 - ??), where ?? is stress overshoot. A simple implementation of this balance is to assume overshoot is constant; then apparent stress should vary linearly with stress drop, consistent with spectral theories (Brune, 1970) and dynamic crack models (Madariaga, 1976). Normalizing this expression by the static stress drop defines an efficiency ??sw = ??sa/????s as follows from Savage and Wood (1971). We use this measure of efficiency to analyze data from one of a number of observational studies that find apparent stress to increase with seismic moment, namely earthquakes recorded in the Cajon Pass borehole by Abercrombie (1995). Increases in apparent stress with event size could reflect an increase in seismic efficiency; however, ??sw for the Cajon earthquakes shows no such increase and is approximately constant over the entire moment range. Thus, apparent stress and stress drop co-vary, as expected from the energy balance at constant overshoot. The median value of ??sw for the Cajon earthquakes is four times lower than ??sw for laboratory events. Thus, these Cajon-recorded earthquakes have relatively low and approximately constant efficiency. As the energy balance requires ??sw = 0.5 - ??, overshoot can be estimated directly from the Savage-Wood efficiency; overshoot is positive for Cajon Pass earthquakes. Variations in apparent stress with seismic moment for these earthquakes result primarily from systematic variations in static stress drop with seismic moment and do not require a relative decrease in sliding resistance with increasing event size (dynamic weakening). Based on the comparison of field and lab determinations of the Savage-Wood efficiency, we suggest the criterion ??sw > 0.3 as a test for dynamic weakening in excess of that seen in the lab.

Modeling a constant power load for nickel-hydrogen battery testing using SPICE

NASA Technical Reports Server (NTRS)

Bearden, Douglas B.; Lollar, Louis F.; Nelms, R. M.

1990-01-01

The effort to design and model a constant power load for the HST (Hubble Space Telescope) nickel-hydrogen battery tests is described. The constant power load was designed for three different simulations on the batteries: life cycling, reconditioning, and capacity testing. A dc-dc boost converter was designed to act as this constant power load. A boost converter design was chosen because of the low test battery voltage (4 to 6 VDC) generated and the relatively high power requirement of 60 to 70 W. The SPICE model was shown to consistently predict variations in the actual circuit as various designs were attempted. It is concluded that the confidence established in the SPICE model of the constant power load ensures its extensive utilization in future efforts to improve performance in the actual load circuit.

Analysis of spacecraft battery charger systems

NASA Astrophysics Data System (ADS)

Kim, Seong J.; Cho, Bo H.

In spacecraft battery charger systems, switching regulators are widely used for bus voltage regulation, charge current regulation, and peak power tracking. Small-signal dynamic characteristics of the battery charging subsystem of direct energy transfer (DET) and peak power tracking (PPT) systems are analyzed to facilitate design of the control loop for optimum performance and stability. Control loop designs of the charger in various modes of operation are discussed. Analyses are verified through simulations. It is shown that when the charger operates in the bus voltage regulation mode, the control-to-voltage transfer function has a negative DC gain and two LHP zeros in both the DET and PPT systems. The control-to-inductor current transfer function also has a negative DC gain and a RHP zero. Thus, in the current-mode control, the current loop can no longer be used to stabilize the system. When the system operates in the charge current regulation mode, the charger operates with a fixed duty cycle which is determined by the regulated bus voltage and the battery voltage. Without an input filter, the converter becomes a first-order system. When the peak power tracker is inactive, the operating point of the solar array output moves to the voltage source region. Thus, the solar array behaves as a stiff voltage source to a constant power load.

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2017-07-01

Prefixing a weak electric field (incubation) might enhance the crystallization speed via pre-structural ordering and thereby achieving faster programming of phase change memory (PCM) devices. We employed a weak electric field, equivalent to a constant small voltage (that is incubation voltage, Vi of 0.3 V) to the applied voltage pulse, VA (main pulse) for a systematic understanding of voltage-dependent rapid threshold switching characteristics and crystallization (set) process of In3SbTe2 (IST) PCM devices. Our experimental results on incubation-assisted switching elucidate strikingly one order faster threshold switching, with an extremely small delay time, td of 300 ps, as compared with no incubation voltage (Vi = 0 V) for the same VA. Also, the voltage dependent characteristics of incubation-assisted switching dynamics confirm that the initiation of threshold switching occurs at a lower voltage of 0.82 times of VA. Furthermore, we demonstrate an incubation assisted ultrafast set process of IST device for a low VA of 1.7 V (˜18 % lesser compared to without incubation) within a short pulse-width of 1.5 ns (full width half maximum, FWHM). These findings of ultrafast switching, yet low power set process would immensely be helpful towards designing high speed PCM devices with low power operation.

A theory of single-electron non-adiabatic tunneling through a small metal nanoparticle with due account of the strong interaction of valence electrons with phonons of the condensed matter environment.

PubMed

Medvedev, Igor G

2011-11-07

A theory of electrochemical behavior of small metal nanoparticles (NPs) which is governed both by the charging effect and the effect of the solvent reorganization on the dynamic of the electron transfer (ET) is considered under ambient conditions. The exact expression for the rate constant of ET from an electrode to NP which is valid for all values of the reorganization free energy E(r), bias voltage, and overpotential is obtained in the non-adiabatic limit. The tunnel current/overpotential relations are studied and calculated for different values of the bias voltage and E(r). The effect of E(r) on the full width at half maximum of the charging peaks is investigated at different values of the bias voltage. The differential conductance/bias voltage and the tunnel current/bias voltage dependencies are also studied and calculated. It is shown that, at room temperature, the pronounced Coulomb blockade oscillations in the differential conductance/bias voltage curves and the noticeable Coulomb staircase in the tunnel current/bias voltage relations are observed only at rather small values of E(r) in the case of the strongly asymmetric tunneling contacts.

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

NASA Astrophysics Data System (ADS)

Li, Min; Lan, Linfeng; Xu, Miao; Wang, Lei; Xu, Hua; Luo, Dongxiang; Zou, Jianhua; Tao, Hong; Yao, Rihui; Peng, Junbiao

2011-11-01

Thin-film transistors (TFTs) using indium zinc oxide as the active layer and anodic aluminium oxide (Al2O3) as the gate dielectric layer were fabricated. The device showed an electron mobility of as high as 10.1 cm2 V-1 s-1, an on/off current ratio of as high as ~108, and a turn-on voltage (Von) of only -0.5 V. Furthermore, this kind of TFTs was very stable under positive bias illumination stress. However, when the device experienced negative bias illumination stress, the threshold voltage shifted to the positive direction. It was found that the instability under negative bias illumination stress (NBIS) was due to the electrons from the Al gate trapping into the Al2O3 dielectric when exposed to the illuminated light. Using a stacked structure of Al2O3/SiO2 dielectrics, the device became more stable under NBIS.

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

NASA Astrophysics Data System (ADS)

Sometani, Mitsuru; Okamoto, Mitsuo; Hatakeyama, Tetsuo; Iwahashi, Yohei; Hayashi, Mariko; Okamoto, Dai; Yano, Hiroshi; Harada, Shinsuke; Yonezawa, Yoshiyuki; Okumura, Hajime

2018-04-01

We investigated methods of measuring the threshold voltage (V th) shift of 4H-silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under positive DC, negative DC, and AC gate bias stresses. A fast measurement method for V th shift under both positive and negative DC stresses revealed the existence of an extremely large V th shift in the short-stress-time region. We then examined the effect of fast V th shifts on drain current (I d) changes within a pulse under AC operation. The fast V th shifts were suppressed by nitridation. However, the I d change within one pulse occurred even in commercially available SiC MOSFETs. The correlation between I d changes within one pulse and V th shifts measured by a conventional method is weak. Thus, a fast and in situ measurement method is indispensable for the accurate evaluation of I d changes under AC operation.

Effects of van der Waals Force and Thermal Stresses on Pull-in Instability of Clamped Rectangular Microplates

PubMed Central

Batra, Romesh C.; Porfiri, Maurizio; Spinello, Davide

2008-01-01

We study the influence of von Kármán nonlinearity, van der Waals force, and thermal stresses on pull-in instability and small vibrations of electrostatically actuated microplates. We use the Galerkin method to develop a tractable reduced-order model for electrostatically actuated clamped rectangular microplates in the presence of van der Waals forces and thermal stresses. More specifically, we reduce the governing two-dimensional nonlinear transient boundary-value problem to a single nonlinear ordinary differential equation. For the static problem, the pull-in voltage and the pull-in displacement are determined by solving a pair of nonlinear algebraic equations. The fundamental vibration frequency corresponding to a deflected configuration of the microplate is determined by solving a linear algebraic equation. The proposed reduced-order model allows for accurately estimating the combined effects of van der Waals force and thermal stresses on the pull-in voltage and the pull-in deflection profile with an extremely limited computational effort. PMID:27879752

Effects of van der Waals Force and Thermal Stresses on Pull-in Instability of Clamped Rectangular Microplates.

PubMed

Batra, Romesh C; Porfiri, Maurizio; Spinello, Davide

2008-02-15

We study the influence of von Karman nonlinearity, van der Waals force, and a athermal stresses on pull-in instability and small vibrations of electrostatically actuated mi-croplates. We use the Galerkin method to develop a tractable reduced-order model for elec-trostatically actuated clamped rectangular microplates in the presence of van der Waals forcesand thermal stresses. More specifically, we reduce the governing two-dimensional nonlineartransient boundary-value problem to a single nonlinear ordinary differential equation. For thestatic problem, the pull-in voltage and the pull-in displacement are determined by solving apair of nonlinear algebraic equations. The fundamental vibration frequency corresponding toa deflected configuration of the microplate is determined by solving a linear algebraic equa-tion. The proposed reduced-order model allows for accurately estimating the combined effectsof van der Waals force and thermal stresses on the pull-in voltage and the pull-in deflectionprofile with an extremely limited computational effort.

Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2018-02-01

Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

Antiferroelectric Materials, Applications and Recent Progress on Multiferroic Heterostructures

NASA Astrophysics Data System (ADS)

Zhou, Ziyao; Yang, Qu; Liu, Ming; Zhang, Zhiguo; Zhang, Xinyang; Sun, Dazhi; Nan, Tianxiang; Sun, Nianxiang; Chen, Xing

2015-04-01

Antiferroelectric (AFE) materials with adjacent dipoles oriented in antiparallel directions have a double polarization hysteresis loops. An electric field (E-field)-induced AFE-ferroelectric (FE) phase transition takes place in such materials, leading to a large lattice strain and energy change. The high dielectric constant and the distinct phase transition in AFE materials provide great opportunities for the realization of energy storage devices like super-capacitors and energy conversion devices such as AFE MEMS applications. Lots of work has been done in this field since 60-70 s. Recently, the strain tuning of the spin, charge and orbital orderings and their interactions in complex oxides and multiferroic heterostructures have received great attention. In these systems, a single control parameter of lattice strain is used to control lattice-spin, lattice-phonon, and lattice-charge interactions and tailor properties or create a transition between distinct magnetic/electronic phases. Due to the large strain/stress arising from the phase transition, AFE materials are great candidates for integrating with ferromagnetic (FM) materials to realize in situ manipulation of magnetism and lattice-ordered parameters by voltage. In this paper, we introduce the AFE material and it's applications shortly and then review the recent progress in AFEs based on multiferroic heterostructures. These new multiferroic materials could pave a new way towards next generation light, compact, fast and energy efficient voltage tunable RF/microwave, spintronic and memory devices promising approaches to in situ manipulation of lattice-coupled order parameters is to grow epitaxial oxide films on FE/ferroelastic substrates.

Impact comparative study of phone carcasses behavior by FEM

NASA Astrophysics Data System (ADS)

Constantin, Cărăuşu; Plăvănescu, Simona; Dumitru, Nedelcu

2015-07-01

A constant concern of scientific research is based on plastics replace with biodegradable materials that reduce the adverse impact of waste on the environment. A biodegradable material that arouses interest lately is Arboform which is made of lignin, a component of wood and woody plants. Replacing plastic with Arboform in carrying components of products requires technical and economic studies on the implications of such replacement. Numerical simulation methods are a fast and economical way of analyzing the behavior of a product in various mechanical, thermal, electromagnetic and so on. The paper presents comparative results of numerical simulation using the software package SolidWorks impact behavior through the “Drop Test” of half shells made of High Density Polyethylene (HDPE) and of the Arboform LV3 Nature. Simulation watched the half-carcass behavior in three cases of accidental impact, “head”, “corner” and the “back side”. We analyzed the size and location of the maximum voltage and maximum deformation resulting from impact. Simulations have shown for all three cases a maximum voltage increase when using Arboform to use PEDH 93% for impact “forward” and “corner” and only 48.77% “back side” impact. If the maximum displacement, it increasing from carcasses of Arboform 4% for impact “head” and 6% for impact “corner”, but fell by 2.7% for the “back side” impact. The significant increase of stress can be attributed to the higher density of Arboform to PEDH, which led to different weights of the two half-carcasses.

In situ stress evolution during magnetron sputtering of transition metal nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abadias, G.; Guerin, Ph.

2008-09-15

Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence of stress gradients is revealed, as the result of two kinetically competing stress generation mechanisms: atomic peening effect, inducing compressive stress, and void formation, leading to a tensile stress regime predominant at higher film thickness. No stress relaxation is detected during growth interrupt in both regimes. A change from compressive to tensile stress is evidenced with increasing film thickness, Ti content, sputtering pressure, and decreasing bias voltage.

Piezoelectric Bolt Breakers and Bolt Fatigue Testers

NASA Technical Reports Server (NTRS)

Sherrit, Stewart; Badescu, Mircea; Bar-Cohen, Yoseph; Barengoltz, Jack; Heckman, Vanessa

2008-01-01

A proposed family of devices for inducing fatigue in bolts in order to break the bolts would incorporate piezoelectric actuators into resonant fixtures as in ultrasonic/ sonic drills/corers and similar devices described in numerous prior NASA Tech Briefs articles. These devices were originally intended primarily for use as safer, more-reliable, more-versatile alternatives to explosive bolts heretofore used to fasten spacecraft structures that must subsequently be separated from each other quickly on command during flight. On Earth, these devices could be used for accelerated fatigue testing of bolts. Fatigue theory suggests that a bolt subjected to both a constant-amplitude dynamic (that is, oscillatory) stress and a static tensile stress below the ultimate strength of the bolt material will fail faster than will a bolt subjected to only the dynamic stress. This suggestion would be applied in a device of the proposed type. The device would be designed so that the device and the bolt to be fatigue-tested or broken would be integral parts of an assembly (see figure). The static tension in the tightened bolt would apply not only the clamping force to hold the joined structures (if any) together but also the compression necessary for proper operation of the piezoelectric actuators as parts of a resonant structural assembly. The constant-amplitude dynamic stress would be applied to the bolt by driving the piezoelectric actuators with a sinusoidal voltage at the resonance frequency of longitudinal vibration of the assembly. The amplitude of the excitation would be made large enough so that the vibration would induce fatigue in the bolt within an acceptably short time. In the spacecraft applications or in similar terrestrial structural-separation applications, devices of the proposed type would offer several advantages over explosive bolts: Unlike explosive bolts, the proposed devices would be reusable, could be tested before final use, and would not be subject to catastrophic misfire. In fatigue-testing applications, devices of the proposed type would offer advantages of compactness and low cost, relative to conventional fatigue- testing apparatuses. In both structural- separation and fatigue-testing applications, bolts to be broken or tested could be instrumented with additional ultrasonic transducers for monitoring of pertinent physical properties and of fatigue failure processes.

Quantitative evaluation method for nonlinear characteristics of piezoelectric transducers under high stress with complex nonlinear elastic constant

NASA Astrophysics Data System (ADS)

Miyake, Susumu; Kasashima, Takashi; Yamazaki, Masato; Okimura, Yasuyuki; Nagata, Hajime; Hosaka, Hiroshi; Morita, Takeshi

2018-07-01

The high power properties of piezoelectric transducers were evaluated considering a complex nonlinear elastic constant. The piezoelectric LCR equivalent circuit with nonlinear circuit parameters was utilized to measure them. The deformed admittance curve of piezoelectric transducers was measured under a high stress and the complex nonlinear elastic constant was calculated by curve fitting. Transducers with various piezoelectric materials, Pb(Zr,Ti)O3, (K,Na)NbO3, and Ba(Zr,Ti)O3–(Ba,Ca)TiO3, were investigated by the proposed method. The measured complex nonlinear elastic constant strongly depends on the linear elastic and piezoelectric constants. This relationship indicates that piezoelectric high power properties can be controlled by modifying the linear elastic and piezoelectric constants.

Synthesis and characterization of LPCVD SiC films using novel precursors

NASA Astrophysics Data System (ADS)

Bhaskaran, Mahalingam

A unique low pressure chemical vapor deposition (LPCVD) process has been developed to synthesize amorphous and crystalline SiC films using environmentally benign chemicals. The interrelationships governing the process variables, compositions and select properties of the resulting films were established. Such films can be used to produce high quality mask membrane for x-ray lithography. These films can also be used in fabricating high power electrical devices, and hetrojunction devices in conjunction with silicon. Amorphous SiC films were synthesized using a single precursor, ditertiarybutylsilane, at temperatures below 850sp°C. Compositional analysis performed on these deposits revealed that, in the deposition temperature range of 625 to 750sp°C, the composition of the deposits changed progressively from slightly silicon rich (55% Si) to slightly carbon rich (51%C). Above 750sp°C, there was a rapid increase in the carbon content from the near stoichiometric value to about 75%-C at 850sp°C. The stoichiometric films exhibited high stress values of 700 ± 50 MPa. Attempts to reduce the stress values resulted in films with excess carbon content of about 60%-C. From the high frequency C-V characterization, the dielectric constant for these films was estimated to be 10.1 ± 0.5. Temperature bias stressing studies revealed a trapped charge density of 0.869× 10sp7 cIsp{-2} within the bulk. Crystalline silicon carbide films were grown on silicon substrates using dichlorosilane and acetylene as precursors, in the temperature range of 950sp°C to 1050sp°C. The carbon content in the film was found to be increasing with the deposition temperature, when the flow ratio of precursors was one. The carbon composition was also found to be sharply dependent on acetylene flow, for constant deposition temperature and pressure. Stoichiometric films were achieved for dichlorosilane to acetylene flow ratio of 4:1. X-ray diffraction studies confirmed the growth of beta-SiC with $$ orientation in all the cases. The voltage-current relationship for Si-film-metal structure showed a diode behavior with an ideality factor of 4.03 in the diffusion current dominating regime.

An analog RF gap voltage regulation system for the Advanced Photon Source storage ring.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horan, D.

1999-04-13

An analog rf gap voltage regulation system has been designed and built at Argonne National Laboratory to maintain constant total storage ring rf gap voltage, independent of beam loading and cavity tuning effects. The design uses feedback control of the klystron mod-anode voltage to vary the amount of rf power fed to the storage ring cavities. The system consists of two independent feedback loops, each regulating the combined rf gap voltages of eight storage ring cavities by varying the output power of either one or two rf stations, depending on the mode of operation. It provides full operator control andmore » permissive logic to permit feedback control of the rf system output power only if proper conditions are met. The feedback system uses envelope-detected cavity field probe outputs as the feedback signal. Two different methods of combining the individual field probe signals were used to generate a relative DC level representing one-half of the total storage ring rf voltage, an envelope-detected vector sum of the field probe rf signals, and the DC sum of individual field probe envelope detector outputs. The merits of both methods are discussed. The klystron high-voltage power supply (HVPS) units are fitted with an analog interface for external control of the mod-anode voltage level, using a four-quadrant analog multiplier to modulate the HVPS mod-anode voltage regulator set-point in response to feedback system commands.« less

Automatic control of finite element models for temperature-controlled radiofrequency ablation.

PubMed

Haemmerich, Dieter; Webster, John G

2005-07-14

The finite element method (FEM) has been used to simulate cardiac and hepatic radiofrequency (RF) ablation. The FEM allows modeling of complex geometries that cannot be solved by analytical methods or finite difference models. In both hepatic and cardiac RF ablation a common control mode is temperature-controlled mode. Commercial FEM packages don't support automating temperature control. Most researchers manually control the applied power by trial and error to keep the tip temperature of the electrodes constant. We implemented a PI controller in a control program written in C++. The program checks the tip temperature after each step and controls the applied voltage to keep temperature constant. We created a closed loop system consisting of a FEM model and the software controlling the applied voltage. The control parameters for the controller were optimized using a closed loop system simulation. We present results of a temperature controlled 3-D FEM model of a RITA model 30 electrode. The control software effectively controlled applied voltage in the FEM model to obtain, and keep electrodes at target temperature of 100 degrees C. The closed loop system simulation output closely correlated with the FEM model, and allowed us to optimize control parameters. The closed loop control of the FEM model allowed us to implement temperature controlled RF ablation with minimal user input.

Electrical properties of Apollo 17 rock and soil samples and a summary of the electrical properties of lunar material at 450 MHz frequency

NASA Technical Reports Server (NTRS)

Gold, T.; Bilson, E.; Baron, R. L.

1976-01-01

The dielectric constant and the voltage absorption length was measured for four Apollo 17 soil samples (73241, 74220, 75061, 76501) and for two Apollo 17 rock samples (76315 and 79135) at 450 MHz frequency. The dielectric constant and absorption length measurements made on the lunar samples are reviewed and related to the transition element concentration in these samples. The significance of the laboratory measurements for radar observations is discussed.

Current leakage for low altitude satellites - Modeling applications. [simulation of high voltage solar cell array in ionospheric plasma environment

NASA Technical Reports Server (NTRS)

Konradi, A.; Mccoy, J. E.; Garriott, O. K.

1979-01-01

To simulate the behavior of a high voltage solar cell array in the ionospheric plasma environment, the large (90 ft x 55 ft diameter) vacuum chamber was used to measure the high-voltage plasma interactions of a 3 ft x 30 ft conductive panel. The chamber was filled with Nitrogen and Argon plasma at electron densities of up to 1,000,000 per cu cm. Measurements of current flow to the plasma were made in three configurations: (a) with one end of the panel grounded, (b) with the whole panel floating while a high bias was applied between the ends of the panel, and (c) with the whole panel at high negative voltage with respect to the chamber walls. The results indicate that a simple model with a constant panel conductivity and plasma resistance can adequately describe the voltage distribution along the panel and the plasma current flow. As expected, when a high potential difference is applied to the panel ends more than 95% of the panel floats negative with respect to the plasma.

Single-phase frequency converter

NASA Astrophysics Data System (ADS)

Baciu, I.; Cunţan, C. D.

2017-01-01

The paper presents a continuous voltage inverter - AC (12V / 230V) made with IGBT and two-stage voltage transformer. The sequence control transistors is achieved using a ring counter whose clock signal is obtained with a monostable circuit LM 555. The frequency of the clock signal can be adjustment with a potentiometer that modifies the charging current of the capacitor which causes constant monostable circuit time. Command sequence consists of 8 intervals of which 6 are assigned to command four transistors and two for the period break at the beginning and end of the sequence control. To obtain an alternation consisting of two different voltage level, two transistors will be comanded, connected to different windings of the transformer and the one connected to the winding providing lower voltage must be comanded twice. The output of the numerator goes through an inverter type MOS and a current amplifier with bipolar transistor.To achieve galvanic separation, an optocoupler will be used for each IGBT transistor, while protection is achieved with resistance and diode circuit. At the end there is connected an LC filter for smoothing voltage variations.

Noise effect on performance of IR PVDF pyroelectric detector

NASA Astrophysics Data System (ADS)

Abdullah, K. Al; Batal, M. Anwar; Hamdan, Rawad; Khalil, Toni; Salame, Chafic

2018-05-01

The spin-casting and casting technology were used to make IR pyroelectric PVDF detectors, where the operational amplifier, TC75S63TU, is used to amplify pyroelectrical signal. The pyroelectric coefficient is measured by charge integration method, which is 23 µC/m2K. The voltage responsivity and noise equivalent power depending on the dielectric constant, specific conductivity and loss tangent, which are measured at various frequencies, is estimated where changing of detector capacitance and resistor with frequency is taken into account. Maximum voltage responsivity was for detector thickness d=116.05 µm at chopping frequency (f=0.8Hz). Influence of thermal, Johnson and amplifier noises on output voltage are studied. At frequencies (<1kHz), Johnson noise dominates whereas at frequencies (>1kHz), amplifier voltage noise dominates. The thinner detector, the lower noise affects on output voltage. The optimal signal to noise ratio (SNR) of pyroelectrical detector is for thickness d=30.1 µm at frequency f=20Hz. The reducing electrode area decreases slightly total noise at low frequency and enhances slightly SNR of pyroelectrical detector.

Interplay of activation kinetics and the derivative conductance determines resonance properties of neurons

NASA Astrophysics Data System (ADS)

Pena, Rodrigo F. O.; Ceballos, Cesar C.; Lima, Vinicius; Roque, Antonio C.

2018-04-01

In a neuron with hyperpolarization activated current (Ih), the correct input frequency leads to an enhancement of the output response. This behavior is known as resonance and is well described by the neuronal impedance. In a simple neuron model we derive equations for the neuron's resonance and we link its frequency and existence with the biophysical properties of Ih. For a small voltage change, the component of the ratio of current change to voltage change (d I /d V ) due to the voltage-dependent conductance change (d g /d V ) is known as derivative conductance (GhDer). We show that both GhDer and the current activation kinetics (characterized by the activation time constant τh) are mainly responsible for controlling the frequency and existence of resonance. The increment of both factors (GhDer and τh) greatly contributes to the appearance of resonance. We also demonstrate that resonance is voltage dependent due to the voltage dependence of GhDer. Our results have important implications and can be used to predict and explain resonance properties of neurons with the Ih current.

Dynamic shear-stress-enhanced rates of nutrient consumption in gas-liquid semi-continuous-flow suspensions

NASA Astrophysics Data System (ADS)

Belfiore, Laurence A.; Volpato, Fabio Z.; Paulino, Alexandre T.; Belfiore, Carol J.

2011-12-01

The primary objective of this investigation is to establish guidelines for generating significant mammalian cell density in suspension bioreactors when stress-sensitive kinetics enhance the rate of nutrient consumption. Ultra-low-frequency dynamic modulations of the impeller (i.e., 35104 Hz) introduce time-dependent oscillatory shear into this transient analysis of cell proliferation under semi-continuous creeping flow conditions. Greater nutrient consumption is predicted when the amplitude A of modulated impeller rotation increases, and stress-kinetic contributions to nutrient consumption rates increase linearly at higher modulation frequency via an application of fluctuation-dissipation response. Interphase mass transfer is required to replace dissolved oxygen as it is consumed by aerobic nutrient consumption in the liquid phase. The theory and predictions described herein could be important at small length scales in the creeping flow regime where viscous shear is significant at the interface between the nutrient medium and isolated cells in suspension. Two-dimensional flow around spherically shaped mammalian cells, suspended in a Newtonian culture medium, is analyzed to calculate the surface-averaged magnitude of the velocity gradient tensor and modify homogeneous rates of nutrient consumption that are stimulated by viscous shear, via the formalism of stress-kinetic reciprocal relations that obey Curie's theorem in non-equilibrium thermodynamics. Time constants for stress-free free and stress-sensitive stress nutrient consumption are defined and quantified to identify the threshold (i.e., stress,threshold) below which the effect of stress cannot be neglected in accurate predictions of bioreactor performance. Parametric studies reveal that the threshold time constant for stress-sensitive nutrient consumption stress,threshold decreases when the time constant for stress-free nutrient consumption free is shorter. Hence, stress,threshold depends directly on free. In other words, the threshold rate of stress-sensitive nutrient consumption is higher when the stress-free rate of nutrient consumption increases. Modulated rotation of the impeller, superimposed on steady shear, increases stress,threshold when free is constant, and stress,threshold depends directly on the amplitude A of these angular velocity modulations.

Cascaded resonant bridge converters

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor)

1989-01-01

A converter for converting a low voltage direct current power source to a higher voltage, high frequency alternating current output for use in an electrical system where it is desired to use low weight cables and other circuit elements. The converter has a first stage series resonant (Schwarz) converter which converts the direct current power source to an alternating current by means of switching elements that are operated by a variable frequency voltage regulator, a transformer to step up the voltage of the alternating current, and a rectifier bridge to convert the alternating current to a direct current first stage output. The converter further has a second stage series resonant (Schwarz) converter which is connected in series to the first stage converter to receive its direct current output and convert it to a second stage high frequency alternating current output by means of switching elements that are operated by a fixed frequency oscillator. The voltage of the second stage output is controlled at a relatively constant value by controlling the first stage output voltage, which is accomplished by controlling the frequency of the first stage variable frequency voltage controller in response to second stage voltage. Fault tolerance in the event of a load short circuit is provided by making the operation of the first stage variable frequency voltage controller responsive to first and second stage current limiting devices. The second stage output is connected to a rectifier bridge whose output is connected to the input of the second stage to provide good regulation of output voltage wave form at low system loads.

30 CFR 28.41 - Testing requirements; general.

Code of Federal Regulations, 2011 CFR

2011-07-01

...., or 600 volts d.c., depending on the voltage rating of the fuse being tested. (b) Time constant of the circuit (defined as T=L/R, where T is the time in seconds, L is the inductance in henries, and R is the...

30 CFR 28.41 - Testing requirements; general.

Code of Federal Regulations, 2012 CFR

2012-07-01

...., or 600 volts d.c., depending on the voltage rating of the fuse being tested. (b) Time constant of the circuit (defined as T=L/R, where T is the time in seconds, L is the inductance in henries, and R is the...

30 CFR 28.41 - Testing requirements; general.

Code of Federal Regulations, 2010 CFR

2010-07-01

...., or 600 volts d.c., depending on the voltage rating of the fuse being tested. (b) Time constant of the circuit (defined as T=L/R, where T is the time in seconds, L is the inductance in henries, and R is the...

30 CFR 28.41 - Testing requirements; general.

Code of Federal Regulations, 2013 CFR

2013-07-01

...., or 600 volts d.c., depending on the voltage rating of the fuse being tested. (b) Time constant of the circuit (defined as T=L/R, where T is the time in seconds, L is the inductance in henries, and R is the...

30 CFR 28.41 - Testing requirements; general.

Code of Federal Regulations, 2014 CFR

2014-07-01

...., or 600 volts d.c., depending on the voltage rating of the fuse being tested. (b) Time constant of the circuit (defined as T=L/R, where T is the time in seconds, L is the inductance in henries, and R is the...

Continuation of surge life of transient voltage suppressor

NASA Technical Reports Server (NTRS)

Clark, O. M.

1977-01-01

Efforts expended in testing, analyzing and the development of a meaningful definition of the mean number of peak pulses before failure (mp2bf) levels of a family of transient voltage suppressor devices were documented. Tests were done to determine the ability of the transient suppressor to effectively and reliably protect against severe short term, millisecond range, and transient voltages of the types resulting from inductive load switching and induced lightning. Existing pulse testing instrumentation was utilized, interfaced to an automatic sequencing test rack accommodating up to 50 devices. Tests were performed in step stress increments of 25% beginning at 25% and extending thru 100% rated I(pp) for each voltage category. The four voltage types test were the 6.8V, 33V, 91V, and 190V. Engineering efforts addressed the problem of improving the reliability of the 190V types.

Tensile properties of HK31XA-H24 magnesium-alloy sheet under rapid-heating conditions and constant elevated temperatures

NASA Technical Reports Server (NTRS)

Gibbs, Thomas W

1956-01-01

Specimens of HK31XA-H24 magnesium-alloy sheet from an experimental batch were heated to failure at nominal temperature rates from 0.2 F to 100 F per second under constant-load conditions. Rapid-heating yield and rupture stresses are presented and compared with the yield and ultimate stresses from elevated-temperature tensile stress-strain tests for 1/2-hour exposure. Linear temperature-rate parameters were used to correlate rapid-heating results by constructing master curves which can be used for predicting yield stresses and temperatures and for estimating rupture stresses and temperatures.

Renormalization group methods for the Reynolds stress transport equations

NASA Technical Reports Server (NTRS)

Rubinstein, R.

1992-01-01

The Yakhot-Orszag renormalization group is used to analyze the pressure gradient-velocity correlation and return to isotropy terms in the Reynolds stress transport equations. The perturbation series for the relevant correlations, evaluated to lowest order in the epsilon-expansion of the Yakhot-Orszag theory, are infinite series in tensor product powers of the mean velocity gradient and its transpose. Formal lowest order Pade approximations to the sums of these series produce a rapid pressure strain model of the form proposed by Launder, Reece, and Rodi, and a return to isotropy model of the form proposed by Rotta. In both cases, the model constants are computed theoretically. The predicted Reynolds stress ratios in simple shear flows are evaluated and compared with experimental data. The possibility is discussed of deriving higher order nonlinear models by approximating the sums more accurately. The Yakhot-Orszag renormalization group provides a systematic procedure for deriving turbulence models. Typical applications have included theoretical derivation of the universal constants of isotropic turbulence theory, such as the Kolmogorov constant, and derivation of two equation models, again with theoretically computed constants and low Reynolds number forms of the equations. Recent work has applied this formalism to Reynolds stress modeling, previously in the form of a nonlinear eddy viscosity representation of the Reynolds stresses, which can be used to model the simplest normal stress effects. The present work attempts to apply the Yakhot-Orszag formalism to Reynolds stress transport modeling.

Determination of calibration constants for the hole-drilling residual stress measurement technique applied to orthotropic composites. II - Experimental evaluations

NASA Technical Reports Server (NTRS)

Prasad, C. B.; Prabhakaran, R.; Tompkins, S.

1987-01-01

The first step in the extension of the semidestructive hole-drilling technique for residual stress measurement to orthotropic composite materials is the determination of the three calibration constants. Attention is presently given to an experimental determination of these calibration constants for a highly orthotropic, unidirectionally-reinforced graphite fiber-reinforced polyimide composite. A comparison of the measured values with theoretically obtained ones shows agreement to be good, in view of the many possible sources of experimental variation.

Efficient Radio Frequency Inductive Discharges in Near Atmospheric Pressure Using Immittance Conversion Topology

NASA Astrophysics Data System (ADS)

Razzak, M. Abdur; Takamura, Shuichi; Uesugi, Yoshihiko; Ohno, Noriyasu

A radio frequency (rf) inductive discharge in atmospheric pressure range requires high voltage in the initial startup phase and high power during the steady state sustainment phase. It is, therefore, necessary to inject high rf power into the plasma ensuring the maximum use of the power source, especially where the rf power is limited. In order to inject the maximum possible rf power into the plasma with a moderate rf power source of few kilowatts range, we employ the immittance conversion topology by converting a constant voltage source into a constant current source to generate efficient rf discharge by inductively coupled plasma (ICP) technique at a gas pressure with up to one atmosphere in argon. A novel T-LCL immittance circuit is designed for constant-current high-power operation, which is practically very important in the high-frequency range, to provide high effective rf power to the plasma. The immittance conversion system combines the static induction transistor (SIT)-based radio frequency (rf) high-power inverter circuit and the immittance conversion elements including the rf induction coil. The basic properties of the immittance circuit are studied by numerical analysis and verified the results by experimental measurements with the inductive plasma as a load at a relatively high rf power of about 4 kW. The performances of the immittance circuit are also evaluated and compared with that of the conventional series resonance circuit in high-pressure induction plasma generation. The experimental results reveal that the immittance conversion circuit confirms injecting higher effective rf power into the plasma as much as three times than that of the series resonance circuit under the same operating conditions and same dc supply voltage to the inverter, thereby enhancing the plasma heating efficiency to generate efficient rf inductive discharges.